WorldWideScience

Sample records for vapor-phase epitaxial growth

  1. A Kinetic Model for GaAs Growth by Hydride Vapor Phase Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, Kevin L.; Simon, John; Jain, Nikhil; Young, David L.; Ptak, Aaron J.

    2016-11-21

    Precise control of the growth of III-V materials by hydride vapor phase epitaxy (HVPE) is complicated by the fact that the growth rate depends on the concentrations of nearly all inputs to the reactor and also the reaction temperature. This behavior is in contrast to metalorganic vapor phase epitaxy (MOVPE), which in common practice operates in a mass transport limited regime where growth rate and alloy composition are controlled almost exclusively by flow of the Group III precursor. In HVPE, the growth rate and alloy compositions are very sensitive to temperature and reactant concentrations, which are strong functions of the reactor geometry. HVPE growth, particularly the growth of large area materials and devices, will benefit from the development of a growth model that can eventually be coupled with a computational fluid dynamics (CFD) model of a specific reactor geometry. In this work, we develop a growth rate law using a Langmuir-Hinshelwood (L-H) analysis, fitting unknown parameters to growth rate data from the literature that captures the relevant kinetic and thermodynamic phenomena of the HVPE process. We compare the L-H rate law to growth rate data from our custom HVPE reactor, and develop quantitative insight into reactor performance, demonstrating the utility of the growth model.

  2. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-04-01

    This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

  3. Hydride vapor phase epitaxy growth of GaN, InGaN, ScN, and ScAIN

    NARCIS (Netherlands)

    Bohnen, T.

    2010-01-01

    Chemical vapor deposition (CVD); hydride vapor phase epitaxy (HVPE); gallium nitride (GaN); indium gallium nitride (InGaN); scandium nitride (ScN); scandium aluminum nitride (ScAlN); semiconductors; thin films; nanowires; III nitrides; crystal growth - We studied the HVPE growth of different III

  4. High Growth Rate Hydride Vapor Phase Epitaxy at Low Temperature through Use of Uncracked Hydrides

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, Kevin L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Simon, John D [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Ptak, Aaron J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Braun, Anna [Rose-Hulman Institute of Technology

    2018-01-22

    We demonstrate hydride vapor phase epitaxy (HVPE) of GaAs with unusually high growth rates (RG) at low temperature and atmospheric pressure by employing a hydride-enhanced growth mechanism. Under traditional HVPE growth conditions that involve growth from Asx species, RG exhibits a strong temperature dependence due to slow kinetics at the surface, and growth temperatures >750 degrees C are required to obtain RG > 60 um/h. We demonstrate that when the group V element reaches the surface in a hydride, the kinetic barrier is dramatically reduced and surface kinetics no longer limit RG. In this regime, RG is dependent on mass transport of uncracked AsH3 to the surface. By controlling the AsH3 velocity and temperature profile of the reactor, which both affect the degree of AsH3 decomposition, we demonstrate tuning of RG. We achieve RG above 60 um/h at temperatures as low as 560 degrees C and up to 110 um/h at 650 degrees C. We incorporate high-RG GaAs into solar cell devices to verify that the electronic quality does not deteriorate as RG is increased. The open circuit voltage (VOC), which is a strong function of non-radiative recombination in the bulk material, exhibits negligible variance in a series of devices grown at 650 degrees C with RG = 55-110 um/h. The implications of low temperature growth for the formation of complex heterostructure devices by HVPE are discussed.

  5. Polycrystalline indium phosphide on silicon by indium assisted growth in hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Metaferia, Wondwosen; Sun, Yan-Ting, E-mail: yasun@kth.se; Lourdudoss, Sebastian [Laboratory of Semiconductor Materials, Department of Materials and Nano Physics, KTH—Royal Institute of Technology, Electrum 229, 164 40 Kista (Sweden); Pietralunga, Silvia M. [CNR-Institute for Photonics and Nanotechnologies, P. Leonardo da Vinci, 32 20133 Milano (Italy); Zani, Maurizio; Tagliaferri, Alberto [Department of Physics Politecnico di Milano, P. Leonardo da Vinci, 32 20133 Milano (Italy)

    2014-07-21

    Polycrystalline InP was grown on Si(001) and Si(111) substrates by using indium (In) metal as a starting material in hydride vapor phase epitaxy (HVPE) reactor. In metal was deposited on silicon substrates by thermal evaporation technique. The deposited In resulted in islands of different size and was found to be polycrystalline in nature. Different growth experiments of growing InP were performed, and the growth mechanism was investigated. Atomic force microscopy and scanning electron microscopy for morphological investigation, Scanning Auger microscopy for surface and compositional analyses, powder X-ray diffraction for crystallinity, and micro photoluminescence for optical quality assessment were conducted. It is shown that the growth starts first by phosphidisation of the In islands to InP followed by subsequent selective deposition of InP in HVPE regardless of the Si substrate orientation. Polycrystalline InP of large grain size is achieved and the growth rate as high as 21 μm/h is obtained on both substrates. Sulfur doping of the polycrystalline InP was investigated by growing alternating layers of sulfur doped and unintentionally doped InP for equal interval of time. These layers could be delineated by stain etching showing that enough amount of sulfur can be incorporated. Grains of large lateral dimension up to 3 μm polycrystalline InP on Si with good morphological and optical quality is obtained. The process is generic and it can also be applied for the growth of other polycrystalline III–V semiconductor layers on low cost and flexible substrates for solar cell applications.

  6. Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals

    Science.gov (United States)

    Nakamura, Daisuke; Kimura, Taishi; Horibuchi, Kayo

    2017-04-01

    Here, we propose a halogen-free vapor phase epitaxy (HF-VPE) technique to grow bulk GaN single crystals. This technique employs the simplest reaction for GaN synthesis (reaction of Ga vapor with NH3) and can potentially achieve a high growth rate, a prolonged growth duration, a high crystal quality, and a low cost. The analyses of thick HF-VPE-GaN layers grown under optimized growth conditions revealed that high-quality crystals, both in terms of dislocation density and impurity concentration, are obtained at high growth rates of over 100 µm/h.

  7. Direct Growth of CdTe on a (211) Si Substrate with Vapor Phase Epitaxy Using a Metallic Cd Source

    Science.gov (United States)

    Iso, Kenji; Gokudan, Yuya; Shiraishi, Masumi; Murakami, Hisashi; Koukitu, Akinori

    2017-10-01

    We successfully performed epitaxial CdTe growth on a Si (211) substrate with vapor-phase epitaxy using a cost-effective metallic cadmium source as a group-II precursor. The thermodynamic data demonstrate that the combination of metallic Cd and diisopropyl-telluride (DiPTe) with a H2 carrier gas enables the growth of CdTe crystals. A CdTe single crystal with a (422) surface orientation was obtained when a growth temperature between 600°C and 650°C was employed. The surface morphology and crystalline quality were improved with increasing film thickness. The full-width at half-maximum of the x-ray rocking curves with a film thickness of 15.7 μm for the skew-symmetrical (422) and asymmetrical (111) reflection were 528 arcsec and 615 arcsec, respectively.

  8. Growth of GaN on ZrB 2 substrate by metal-organic vapor phase epitaxy

    Science.gov (United States)

    Tomida, Yoshihito; Nitta, Shugo; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Otani, Shigeki; Kinoshita, Hiroyuki; Liu, Rong; Bell, Abigail; Ponce, Fernando A.

    2003-06-01

    Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB 2) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrB xN 1- x is formed on the surface when ZrB 2 is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB 2 surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 10 8 cm -2. Direct conduction was achieved through the back of ZrB 2 and the surface of Si-doped GaN.

  9. Conventional and pendeo-epitaxial growth of III-nitride thin films by molecular beam and metalorganic vapor phase techniques

    Science.gov (United States)

    Linthicum, Kevin James

    Reactive gas-source molecular beam epitaxy was employed for the growth of monocrystalline GaN(0001) thin films. On-surface cracking of ammonia at 800°C was the method of choice for obtaining reactive nitrogen-containing species and growth rates of 2500A/hr were achieved. Pendeo-epitaxy, a general form of selective lateral growth, was developed for the organometallic vapor phase epitaxy growth of GaN and AlGaN thin films on GaN/AlN/6H-SiC(0001) substrates. In this technique, selective lateral growth was forced to initiate from the (1120) sidewalls of etched GaN seed forms by incorporating a silicon nitride seed mask atop the forms and employing the SiC substrate as a pseudo-mask. Coalescence over and between the seed forms was achieved. Transmission electron microscopy revealed that all vertically threading defects stemming from the GaN/AlN and AlN/SiC interfaces were contained within the seed forms and that a substantial reduction in the dislocation density of the laterally grown GaN was achieved. To achieve pendeo-epitaxial growth of monocrystalline GaN films on Si(111) substrates, a series of additional process steps was required, including the formation of a SiC chemical/reaction barrier. Single-crystal beta-SiC(111) thin films were obtained via carburization of the near-surface regions of vicinal Si(111). The thickness of the converted layers was approximately 5nm. Thick (500nm), epitaxial 3C-SiC layers grown via atmospheric pressure chemical vapor deposition were also used in tandem with the carburized silicon substrates. Monocrystalline AlN(0001) layers were grown on the SiC/Si substrates at 1100°C via MOVPE. Single-crystal wurtzitic GaN(0001) seed layers were grown on the AlN(0001) layers. The FWHM of the GaN(0002) x-ray diffraction and the photoluminescence band-edge emission peaks were 1443 arcsec and 19 meV, respectively. Pendeo-epitaxial growth of GaN on GaN/AlN/3C-SiC/Si(111) raised stripes was achieved. Crystallographic tilting of 0.2°(720 arcsec

  10. A semi-empirical model for the complete orientation dependence of the growth rate for vapor phase epitaxy - Chloride VPE of GaAs

    Science.gov (United States)

    Seidel-Salinas, L. K.; Jones, S. H.; Duva, J. M.

    1992-01-01

    A semi-empirical model has been developed to determine the complete crystallographic orientation dependence of the growth rate for vapor phase epitaxy (VPE). Previous researchers have been able to determine this dependence for a limited range of orientations; however, our model yields relative growth rate information for any orientation. This model for diamond and zincblende structure materials is based on experimental growth rate data, gas phase diffusion, and surface reactions. Data for GaAs chloride VPE is used to illustrate the model. The resulting growth rate polar diagrams are used in conjunction with Wulff constructions to simulate epitaxial layer shapes as grown on patterned substrates. In general, this model can be applied to a variety of materials and vapor phase epitaxy systems.

  11. Influence of lateral growth on the optical properties of GaN nanowires grown by hydride vapor phase epitaxy

    Science.gov (United States)

    Wu, Shaoteng; Wang, Liancheng; Yi, Xiaoyan; Liu, Zhiqiang; Wei, Tongbo; Yuan, Guodong; Wang, Junxi; Li, Jinmin

    2017-11-01

    GaN nanowires (NWs) are synthesized on Si (111) using vapor-liquid-solid hydride vapor phase epitaxy at low temperature (740-780 °C). We find that the flow rate of the GaCl (HCl) gas has a large impact on the NW lateral growth rate, which affects the NW morphology, axial growth rate, and optical property. Upon increasing the flow rate of GaCl, the uncatalyzed vapor solid lateral growth increases rapidly, leading to variations in NW morphology from wire-like to tower-like and rod-like. The photoluminescence spectrum shows a broad red luminescence (RL) at around 660 nm and a weak near-band-edge luminescence at around 400 nm when lateral growth is at a significant level. Furthermore, spatially resolved cathodoluminescence and high-resolution transmission electron microscopy observations confirmed that this RL originates from the defective lateral growth. Finally, by inhibiting the lateral growth, GaN NWs with a high aspect ratio and excellent crystal quality (no RL observed at around 660 nm) were successfully synthesized with a rapid growth rate of 170 μm/h.

  12. Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Kasarla, K. R.; Korakakis, D.

    2007-08-01

    The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and {1 1 2¯ n} facets ( n≈1.7-2.2). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.

  13. Self-Catalyzed Growth of Vertically Aligned InN Nanorods by Metal-Organic Vapor Phase Epitaxy.

    Science.gov (United States)

    Tessarek, C; Fladischer, S; Dieker, C; Sarau, G; Hoffmann, B; Bashouti, M; Göbelt, M; Heilmann, M; Latzel, M; Butzen, E; Figge, S; Gust, A; Höflich, K; Feichtner, T; Büchele, M; Schwarzburg, K; Spiecker, E; Christiansen, S

    2016-06-08

    Vertically aligned hexagonal InN nanorods were grown mask-free by conventional metal-organic vapor phase epitaxy without any foreign catalyst. The In droplets on top of the nanorods indicate a self-catalytic vapor-liquid-solid growth mode. A systematic study on important growth parameters has been carried out for the optimization of nanorod morphology. The nanorod N-polarity, induced by high temperature nitridation of the sapphire substrate, is necessary to achieve vertical growth. Hydrogen, usually inapplicable during InN growth due to formation of metallic indium, and silane are needed to enhance the aspect ratio and to reduce parasitic deposition beside the nanorods on the sapphire surface. The results reveal many similarities between InN and GaN nanorod growth showing that the process despite the large difference in growth temperature is similar. Transmission electron microscopy, spatially resolved energy-dispersive X-ray spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and Raman spectroscopy have been performed to analyze the structural properties. Spatially resolved cathodoluminescence investigations are carried out to verify the optical activity of the InN nanorods. The InN nanorods are expected to be the material of choice for high-efficiency hot carrier solar cells.

  14. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    Energy Technology Data Exchange (ETDEWEB)

    Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Patriarche, Gilles [CNRS, Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis (France); Sundaram, Suresh; El Gmili, Youssef [CNRS UMI 2958, Georgia Institute of Technology, 2 Rue Marconi, 57070 Metz (France); Salvestrini, Jean-Paul [Université de Lorraine, CentraleSupélec, LMOPS, EA4423, 57070 Metz (France); Heer, Walt A. de [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Berger, Claire [School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); CNRS, Institut Néel, BP166, 38042 Grenoble Cedex 9 (France)

    2016-03-07

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  15. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    Science.gov (United States)

    Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

    2016-03-01

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  16. Organometallic vapor-phase epitaxy theory and practice

    CERN Document Server

    Stringfellow, Gerald B

    1989-01-01

    Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the

  17. Growth of low-threading-dislocation-density GaN on graphene by hydride vapor phase epitaxy

    Science.gov (United States)

    He, Shunyu; Xu, Yu; Qi, Lin; Li, Zongyao; Cao, Bing; Wang, Chinhua; Zhang, Jicai; Wang, Jianfeng; Xu, Ke

    2017-03-01

    Recently, gallium nitride (GaN) films grown on graphene have been widely studied. Here, we have grown low-threading-dislocation-density GaN films on graphene by hydride vapor phase epitaxy (HVPE). The full widths at half maximum (FWHMs) of X-ray rocking curves (XRCs) of the GaN films were 276 and 350 arcsec at the 0002 and 10\\bar{1}2 reflections, respectively. This shows that the threading dislocation densities are on the order of magnitude of 108 cm-2, which is consistent with the results of cathodoluminescence (CL).

  18. Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

    2008-01-01

    Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor...

  19. Defect structure of high temperature hydride vapor phase epitaxy-grown epitaxial (0 0 0 1) AlN/sapphire using growth mode modification process

    Science.gov (United States)

    Su, Xujun; Zhang, Jicai; Huang, Jun; Zhang, Jinping; Wang, Jianfeng; Xu, Ke

    2017-06-01

    Defect structures were investigated by transmission electron microscopy for AlN/sapphire (0 0 0 1) epilayers grown by high temperature hydride vapor phase epitaxy using a growth mode modification process. The defect structures, including threading dislocations, inversion domains, and voids, were analyzed by diffraction contrast, high-resolution imaging, and convergent beam diffraction. AlN film growth was initiated at 1450 °C with high V/III ratio for 8 min. This was followed by low V/III ratio growth for 12 min. The near-interfacial region shows a high density of threading dislocations and inversion domains. Most of these dislocations have Burgers vector b = 1/3〈1 1 2 0〉 and were reduced with the formation of dislocation loops. In the middle range 400 nm < h < 2 μm, dislocations gradually aggregated and reduced to ∼109 cm-2. The inversion domains have a shuttle-like shape with staggered boundaries that deviate by ∼ ±5° from the c axis. Above 2 μm thickness, the film consists of isolated threading dislocations with a total density of 8 × 108 cm-2. Most of threading dislocations are either pure edge or mixed dislocations. The threading dislocation reduction in these films is associated with dislocation loops formation and dislocation aggregation-interaction during island growth with high V/III ratio.

  20. Critical issues for homoepitaxial GaN growth by molecular beam epitaxy on hydride vapor-phase epitaxy-grown GaN substrates

    Science.gov (United States)

    Storm, D. F.; Hardy, M. T.; Katzer, D. S.; Nepal, N.; Downey, B. P.; Meyer, D. J.; McConkie, Thomas O.; Zhou, Lin; Smith, David J.

    2016-12-01

    While the heteroepitaxial growth of gallium nitride-based materials and devices on substrates such as SiC, sapphire, and Si has been well-documented, the lack of a cost-effective source of bulk GaN crystals has hindered similar progress on homoepitaxy. Nevertheless, freestanding GaN wafers are becoming more widely available, and there is great interest in growing GaN films and devices on bulk GaN substrates, in order to take advantage of the greatly reduced density of threading dislocations, particularly for vertical devices. However, homoepitaxial GaN growth is far from a trivial task due to the reactivity and different chemical sensitivities of N-polar (0001) and Ga-polar (0001) GaN surfaces, which can affect the microstructure and concentrations of impurities in homoepitaxial GaN layers. In order to achieve high quality, high purity homoepitaxial GaN, it is necessary to investigate the effect of the ex situ wet chemical clean, the use of in situ cleaning procedures, the sensitivity of the GaN surface to thermal decomposition, and the effect of growth temperature. We review the current understanding of these issues with a focus on homoepitaxial growth of GaN by molecular beam epitaxy (MBE) on c-plane surfaces of freestanding GaN substrates grown by hydride vapor phase epitaxy (HVPE), as HVPE-grown substrates are most widely available. We demonstrate methods for obtaining homoepitaxial GaN layers by plasma-assisted MBE in which no additional threading dislocations are generated from the regrowth interface and impurity concentrations are greatly reduced.

  1. Modeling of Gallium Nitride Hydride Vapor Phase Epitaxy

    Science.gov (United States)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A reactor model for the hydride vapor phase epitaxy of GaN is presented. The governing flow, energy, and species conservation equations are solved in two dimensions to examine the growth characteristics as a function of process variables and reactor geometry. The growth rate varies with GaCl composition but independent of NH3 and H2 flow rates. A change in carrier gas for Ga source from H2 to N2 affects the growth rate and uniformity for a fixed reactor configuration. The model predictions are in general agreement with observed experimental behavior.

  2. High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

    Science.gov (United States)

    Charles, M.; Baines, Y.; Bavard, A.; Bouveyron, R.

    2018-02-01

    It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 μm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of μm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 μm for the highest growth rates up to 100 μm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 μm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.

  3. Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-11-01

    AlN/GaN short period superlattices are well suited for a number of applications including, but not limited to, digital alloys, intersubband devices, and emitters. In this work, AlN/GaN superlattices with periodicities ranging from 10 to 20 Å have been grown via metal organic vapor phase epitaxy in order to investigate the influence of the interface on the binary alloy growth rates. The GaN growth rate at the interface was observed to decrease with increasing GaN thickness while the AlN growth rate remained constant. This has been attributed to a decrease in the decomposition rate of GaN at the hetero-interface as seen in other III-V hetero-structures.

  4. Growth of InGaAs nanowires on Ge(111) by selective-area metal-organic vapor-phase epitaxy

    Science.gov (United States)

    Yoshida, Akinobu; Tomioka, Katsuhiro; Ishizaka, Fumiya; Motohisa, Junichi

    2017-04-01

    We report the growth of InGaAs nanowires (NWs) on Ge(111) substrates using selective-area metal-organic vapor-phase epitaxy (SA-MOVPE) for novel InGaAs/Ge hybrid complementary metal-oxide-semiconductor (CMOS) applications. Ge(111) substrates with periodic arrays of mask opening were prepared, and InGaAs was selectively grown on the opening region of Ge(111). A uniform array of InGaAs NWs with a diameter around 100 nm was successfully grown using appropriate preparation of the initial surfaces with an AsH3 thermal treatment and flow-rate modulation epitaxy (FME). We found that optimizing partial pressure of AsH3 and the number of FME cycles improved the yield of vertical InGaAs NWs. Line-scan profile analysis of energy dispersive X-ray (EDX) spectrometry showed that the In composition in the InGaAs NW was almost constant from the bottom to the top. Transmission electron microscope (TEM) analysis revealed that the interface between InGaAs NW and Ge had misfit dislocations, but their distance was longer than that expected from the difference in their lattice constants.

  5. Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth

    Energy Technology Data Exchange (ETDEWEB)

    Paszuk, A.; Steidl, M.; Zhao, W.; Dobrich, A.; Kleinschmidt, P. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Brückner, S.; Supplie, O.; Hannappel, T. [Technische Universität Ilmenau, Institut für Physik, 98693 Ilmenau (Germany); Helmholtz-Zentrum Berlin, Institute for Solar Fuels, 14109 Berlin (Germany); Prost, W. [Center for Semiconductor Technology and Optoelectronics (ZHO), University of Duisburg-Essen, 47057 Duisburg (Germany)

    2015-06-08

    Nanowire growth on heteroepitaxial GaP/Si(111) by metalorganic vapor phase epitaxy requires the [-1-1-1] face, i.e., GaP(111) material with B-type polarity. Low-energy electron diffraction (LEED) allows us to identify the polarity of GaP grown on Si(111), since (2×2) and (1×1) surface reconstructions are associated with GaP(111)A and GaP(111)B, respectively. In dependence on the pre-growth treatment of the Si(111) substrates, we were able to control the polarity of the GaP buffers. GaP films grown on the H-terminated Si(111) surface exhibited A-type polarity, while GaP grown on Si surfaces terminated with arsenic exhibited a (1×1) LEED pattern, indicating B-type polarity. We obtained vertical GaAs nanowire growth on heteroepitaxial GaP with (1×1) surface reconstruction only, in agreement with growth experiments on homoepitaxially grown GaP(111)

  6. Interruption-free growth of 10 μm-thick GaN film prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy

    Science.gov (United States)

    Chen, Y. A.; Kuo, C. H.; Wu, J. P.; Chang, C. W.

    2015-09-01

    GaN films (10 μm-thick) of high crystalline quality were prepared on sputtered AlN/PSS template by hydride vapor phase epitaxy (HVPE). By introducing the two-step growth method into HVPE, one can reduce the steps in the procedure, realize uninterrupted growth, and improve the crystal quality of the films. The effects of initial GaN growth on the AlN/PSS template by HVPE were also investigated. In this study, 10 μm-thick GaN films prepared on sputtered AlN/PSS template by HVPE showed improved crystal quality using X-ray diffraction and etching pits density. Compared with conventional undoped GaN film grown by metal organic chemical vapor deposition, the full width at half maximum of the (0 0 2) and (1 0 2) peaks of GaN decreased from 450 arcsec to 290 arcsec and from 376 arcsec to 344 arcsec, respectively. Transmission electron microscopy results showed that the gaps observed between the convex regions would eventually turn into dislocations during coalescence, because the number of dislocations increased with the number of gaps observed between the convex regions after step-1 growth.

  7. Lateral epitaxial growth techniques for gallium nitride thin films on 6H-silicon carbide(0001) substrates via metalorganic vapor phase epitaxy

    Science.gov (United States)

    Thomson, Darren Brent

    Pendeo-epitaxy (PE) was developed as an alternative method to lateral epitaxial overgrowth (LEO) for the growth of GaN films with lower dislocation densities than that of conventionally grown films. In the PE technique, GaN is grown laterally from the sidewalls of etched stripes in previously deposited GaN seed layers grown on 6H-SiC(0001). The resulting GaN structure is suspended above the substrate and thereby avoids the formation of threading dislocations that arise from the lattice mismatch between the GAN film, buffer layer and substrate. The dislocation density in the laterally grown material is reduced by approximately five orders of magnitude. Uncoalesced and coalesced PE GaN structures have been successfully grown in this research. The growth mechanism for GaN via lateral epitaxy (LE) is described using a model of interpenetrating hexagonal pyramids. In contrast to the moderate rates of lateral growth of this compound from seed stripes oriented along [112¯0], analogous growth from stripes oriented parallel to [11¯00] can have high lateral growth rates due to the competition between adjacent (101¯1) and (011¯1) facets. When appropriate growth conditions are employed, the competing facets yield to the fast growing metastable (112¯0) vertical facet. In the absence of competing facets, which occurs at the ends of the stripes, the morphology of the lateral growth reverts to the stable {11¯01} facets. The formation of voids during the coalescence of GaN grown via lateral epitaxy is a common occurrence. These voids weaken the film and make it more susceptible to cracking. The interpenetrating hexagonal pyramid model is used to describe the growth mechanism leading to the formation of voids and their elimination. Experimental observations consistent with this model are presented. A novel method for the elimination of coalescence voids using an unconventional seed stripe orientation is also presented.

  8. Tunnel Junction Development Using Hydride Vapor Phase Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Ptak, Aaron J [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Simon, John D [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte, Kevin L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-10-18

    We demonstrate for the first time III-V tunnel junctions grown using hydride vapor phase epitaxy (HVPE) with peak tunneling currents >8 A/cm2, sufficient for operation of a multijunction device to several hundred suns of concentration. Multijunction solar cells rely on tunneling interconnects between subcells to enable series connection with minimal voltage loss, but tunnel junctions have never been shown using the HVPE growth method. HVPE has recently reemerged as a low-cost growth method for high-quality III-V materials and devices, including the growth of high-efficiency III-V solar cells. We previously showed single-junction GaAs solar cells with conversion efficiencies of ~24% with a path forward to equal or exceed the practical efficiency limits of crystalline Si. Moving to a multijunction device structure will allow for even higher efficiencies with minimal impact on cost, necessitating the development of tunnel interconnects. Here, we demonstrate the performance of both isolated HVPE-grown tunnel junctions, as well as single-junction GaAs solar cell structures with a tunnel junction incorporated into the contact region. We observe no degradation in device performance compared to a structure without the added junction.

  9. Blanket and Patterned Growth of CdTe on (211)Si Substrates by Metal-Organic Vapor Phase Epitaxy

    Science.gov (United States)

    2012-05-15

    full-width-at-half maximum (FWHM) of 64 arcs for a 12 µm thick layer and Everson etch pit density ( EPD ) of 3x105 cm-2. In order to reduce the threading...layer and Everson etch pit density ( EPD ) of 3x105 cm-2. In order to reduce the threading dislocation density further, growth on patterned layer has...XRD) rocking-curve full-width-at-half- maximum (FWHM) of 64 arcs for a 12 µm thick layer and Everson etch pit density ( EPD ) of 3x105 cm-2. In or- der

  10. Growth of gallium nitride based devices on silicon(001) substrates by metalorganic vapor phase epitaxy; Wachstum von Galliumnitrid-basierten Bauelementen auf Silizium(001)-Substraten mittels metallorganischer Gasphasenepitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Reiher, Fabian

    2009-02-25

    The main topic of this thesis is to investigate GaN-based layer systems grown by metalorganic vapor phase epitaxy on Si(001) substrates. A temperature shift up to 45 K is measured for a complete device structure on a 2-inch silicon substrate. By using a 40 nm thin LT-AlN-seed layer (680 C), the GaN crystallites on Si(001) substrates are almost oriented with their GaN(10 anti 12)-planes parallel to the Si(001)-plane. A four-fold azimuthal symmetry occurs for these layers, with the GaN[10 anti 11]-direction is aligned parallel to one of the four equivalent left angle 110 right angle -directions, respectively. However, a mono-crystalline and fully coalesced GaN-layer with this crystallographic orientation could not yet been obtained. If a deposition temperature of more than 1100 C is used for the AlN-seed layer, solely the GaN[0001]- growth direction of crystallites occurs in the main GaN layer on Si(001) substrates. These c-axis oriented GaN columns feature two opposite azimuthal alignments that are rotated by 90 with respect to each other and with GaN[11 anti 20] parallel Si[110] and GaN[10 anti 10] parallel Si[110], respectively. By using 4 off-oriented substrates towards the Si[110]-direction, one certain azimuthal texture component can be selected. The critical value of the miscut angle corresponds to theoretical calculations predicting the occurrence of atomic double steps on the Si(001) surface. The achieved crystallographic quality of the GaN layers on Si(001) is characterized by having a tilt of FWHM=0.27 and a twist of FWHM=0.8 of the crystallites, determined by X-ray diffraction. A completely crack-free, up to 2.5 {mu}m thick, and mono-crystalline GaN-template can be realized on Si(001), integrating 4 or 5 LT-AlN-interlayers in the GaN buffer structure. Based on this structure, the first successful implementation of an (InGaN/GaN)-LED on Si(001) is achieved. Furthermore, the possible fabrication of GaN-based FET-structures is demonstrated with a fully

  11. Low-temperature growth of AlN and GaN by metal organic vapor phase epitaxy for polarization engineered water splitting photocathode

    Science.gov (United States)

    Nakamura, Akihiro; Suzuki, Michihiro; Fujii, Katsushi; Nakano, Yoshiaki; Sugiyama, Masakazu

    2017-04-01

    Crystal properties of low-temperature grown AlN (LT-AlN) combined with low temperature GaN (LT-GaN) grown by metal organic vapor phase epitaxy (MOVPE) were investigated to obtain a high quality GaN/AlN/GaN structure with a few-nm-thick AlN layer. LT-AlN suppresses unintentional Ga incorporation and can be pseudomorphically grown on GaN with a relatively smooth surface morphology. The lattice of LT-AlN coherent to GaN, however, was found to relax after reactor conditions were changed to grow the subsequent GaN layer at higher temperature. The top GaN layer grown on the relaxed LT-AlN, thus, exhibited a rough surface morphology and a threading dislocation density (TDD) higher than 109 cm-2 estimated from an X-ray diffraction measurement. An LT-GaN capping layer was found to be highly effective for avoiding such lattice relaxation of LT-AlN. The combination of LT-AlN and LT-GaN enables us to obtain a GaN/AlN/GaN junction with high Al content, a low TDD, and abrupt interfaces. As a result, introducing an LT-GaN layer improved the photoelectrochemical (PEC) property of a polarization engineered un-doped GaN/AlN/n-type GaN (u-GaN/AlN/n-GaN) photocathode for water splitting.

  12. Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthesized by topochemical method of atoms substitution

    DEFF Research Database (Denmark)

    Rozhavskaya, Mariia M.; Kukushkin, Sergey A.; Osipov, Andrey V.

    2017-01-01

    crystalline interfaces with epitaxial relationship between SiC/Si and AlN/SiC layers. Optimization of SiC morphology and AlN seed layer thickness facilitates the growth of GaN layers free of pits (v-defects). It is also found that Si doping eliminates these defects in the case of growth on SiC templates...... with non-optimized surface morphology. Thus, synthesis of thin SiC buffer layer is suggested as a solution for the interface problems at the initial stage of III-N on Si epitaxy....

  13. Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

    Science.gov (United States)

    Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

    2017-06-01

    Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

  14. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    A.Y. Polyakov

    2017-03-01

    Full Text Available Electrical and luminescent properties of near-UV light emitting diode structures (LEDs prepared by hydride vapor phase epitaxy (HVPE were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

  15. Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bartłomiej; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Sankowska, Iwona [The Institute of Electron Technology, Al. Lotnikow 32/46, 02-668 Warszawa (Poland)

    2016-09-15

    Herein, silicon substrates in alternative orientations from the commonly used Si(111) were used to enable the growth of polar and semipolar GaN-based structures by the metalorganic vapor phase epitaxy method. Specifically, Si(112) and Si(115) substrates were used for the epitaxial growth of nitride multilayer structures, while the same layer schemes were also deposited on Si(111) for comparison purposes. Multiple approaches were studied to examine the influence of the seed layers and the growth process conditions upon the final properties of the GaN/Si(11x) templates. Scanning electron microscope images were acquired to examine the topography of the deposited samples. It was observed that the substrate orientation and the process conditions allow control to produce an isolated GaN block growth or a coalesced layer growth, resulting in inclined c-axis GaN structures under various forms. The angles of the GaN c-axis inclination were determined by x-ray diffraction measurements and compared with the results obtained from the analysis of the atomic force microscope (AFM) images. The AFM image analysis method to determine the structure tilt was found to be a viable method to estimate the c-axis inclination angles of the isolated blocks and the not-fully coalesced layers. The quality of the grown samples was characterized by the photoluminescence method conducted at a wide range of temperatures from 77 to 297 K, and was correlated with the sample degree of coalescence. Using the free-excitation peak positions plotted as a function of temperature, analytical Bose-Einstein model parameters were fitted to obtain further information about the grown structures.

  16. Effect of growth conditions on the Al composition and optical properties of Al x Ga 1−x N layers grown by atmospheric-pressure metal organic vapor phase epitaxy

    KAUST Repository

    Soltani, S.

    2017-02-17

    The effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy is investigated. The Al content of the samples is varied between 3.0% and 9.3% by changing the gas flow rate of either trimethylaluminum (TMA) or trimethylgallium (TMG) while other growth parameters are kept constant. The optical properties of the AlxGa1-xN layers are studied by photoreflectance and time-resolved photoluminescence (TR-PL) spectroscopies. A degeneration in the material quality of the samples is revealed when the Al content is increased by increasing the TMA flow rate. When the TMG flow rate is decreased with a fixed TMA flow rate, the Al content of the AlxGa1-xN layers is increased and, furthermore, an improvement in the optical properties corresponding with an increase in the PL decay time is observed. (C) 2017 Elsevier B.V. All rights reserved.

  17. Vapor phase epitaxial liftoff of GaAs and silicon single crystal films

    Energy Technology Data Exchange (ETDEWEB)

    Chang, W.; Kao, C.P.; Pike, G.A.; Slone, J.A.; Yablonovitch, E. [Electrical Engineering Department, University of California, Los Angeles, CA 90095-1594 (United States)

    1999-06-10

    Among the technologies for integrating GaAs devices with Si VLSI chips, epitaxial liftoff (ELO) is conspicuous for maintaining the quality of the single crystal epitaxial GaAs films. Traditionally, ELO is implemented in aqueous HF solution. It would be cleaner and simpler if ELO could be implemented in a vapor process. In this article, we will present the potential improvements in the ELO process by using a vapor phase etch to undercut thin films

  18. Fabrication of large flat gallium nitride templates with extremely low dislocation densities in the 106 cm-2 range by novel two-side hydride vapor-phase epitaxial growth

    Science.gov (United States)

    Fujikura, Hajime; Konno, Taichiro

    2017-10-01

    Large GaN templates with high flatness (i.e., negligible wafer bowing and smooth as-grown surfaces) and low threading dislocation densities (TTDs) were fabricated by a novel two-side hydride vapor-phase epitaxial (HVPE) growth, beginning with deposition of polycrystalline GaN on the rear side of the wafer. Appropriate gas-flow management realized by our homemade HVPE system permitted the growth of a GaN layer with a smooth as-grown surface and excellent thickness uniformity on the front surfaces of 4- or 6-inch patterned sapphire substrates (PSSs). However, when the grown thickness exceeded 20 μm, single-side HVPE-growth induced fractures in GaN crystals. The fracture resistance of the GaN increased markedly when it was in a cleavage-resistant polycrystalline form (poly-GaN), permitting its growth to a thickness of 100 μm. In the presence of a back-side poly-GaN layer, extremely thick GaN crystal layers could be grown on the front side without fractures. An 80-μm-thick GaN template fabricated by two-side growth on a 4-inch PSS had a device-quality surface, negligible bowing, and low TDD (7 × 106 cm-2). Issues of high fabrication costs, unavailability of large-size wafers, and large off-angle variations associated with native GaN wafers could be overcome by using our high-quality GaN templates as alternative substrates.

  19. AlN thin film grown on different substrates by hydride vapor phase epitaxy

    Science.gov (United States)

    Sun, M. S.; Zhang, J. C.; Huang, J.; Wang, J. F.; Xu, K.

    2016-02-01

    AlN thin films have been grown on GaN/sapphire templates, 6 H-SiC and sapphire by hydride vapor phase epitaxy. The influence of growth conditions and substrates on the crystal qualities and growth mode has been investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The results showed that the low pressure was favorable for high-quality AlN thin film growth around 1000 °C. The full-width at half-maximum (FWHM) of (0002) XRD of 200-nm AlN thin film grown on GaN/sapphire, 6 H-SiC and sapphire are 220, 187 and 260 arc s, respectively. While the corresponding counterparts of (10-12) are 1300, 662 and 2650 arc s, respectively. Both suggested that low dislocation density in AlN grown on 6 H-SiC. The morphology of AlN thin film on sapphire showed islands without coalescence initially, and then changed to be coalescent with atomic steps at 1200 nm. However, those for samples on 6 H-SiC and GaN/sapphire showed smooth surface with clear atomic steps at thickness of 200 nm. The result indicated different growth modes of AlN on different substrates. It was believed that the different lattice mismatchs between AlN and substrates led to the different crystal qualities and growth modes.

  20. Island dynamics and anisotropy during vapor phase epitaxy of m-plane GaN

    Energy Technology Data Exchange (ETDEWEB)

    Perret, Edith [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; University of Fribourg, Department of Physics and Fribourg Center for Nanomaterials, Chemin du Musée 3, CH-1700 Fribourg, Switzerland; Xu, Dongwei [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Highland, M. J. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Stephenson, G. B. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Zapol, P. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Fuoss, P. H. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Munkholm, A. [Munkholm Consulting, Mountain View, California 94043, USA; Thompson, Carol [Department of Physics, Northern Illinois University, DeKalb, Illinois 60115, USA

    2017-12-04

    Using in situ grazing-incidence x-ray scattering, we have measured the diffuse scattering from islands that form during layer-by-layer growth of GaN by metal-organic vapor phase epitaxy on the (1010) m-plane surface. The diffuse scattering is extended in the (0001) in-plane direction in reciprocal space, indicating a strong anisotropy with islands elongated along [1210] and closely spaced along [0001]. This is confirmed by atomic force microscopy of a quenched sample. Islands were characterized as a function of growth rate F and temperature. The island spacing along [0001] observed during the growth of the first monolayer obeys a power-law dependence on growth rate F-n, with an exponent n = 0:25 + 0.02. The results are in agreement with recent kinetic Monte Carlo simulations, indicating that elongated islands result from the dominant anisotropy in step edge energy and not from surface diffusion anisotropy. The observed power-law exponent can be explained using a simple steady-state model, which gives n = 1/4.

  1. Organometallic Vapor-Phase Epitaxy theory and practice

    CERN Document Server

    Stringfellow, Gerald B

    1999-01-01

    This book describes the operation of a particular technique for the production of compound semiconductor materials. It describes how the technique works, how it can be used for the growth of particular materials and structures, and the application of these materials for specific devices. It contains not only a fundamental description of the operation of the technique but also contains lists of data useful for the everyday operation of OMVPE reactors. It also offers specific recipes that can be used to produce a wide range of specific materials, structures, and devices.Key Features* Updated wit

  2. Characterization of (211) and (100) CdTe Layers Grown on Si Substrates by Metalorganic Vapor-Phase Epitaxy

    Science.gov (United States)

    Yasuda, K.; Niraula, M.; Kojima, M.; Kitagawa, S.; Tsubota, S.; Yamaguchi, T.; Ozawa, J.; Agata, Y.

    2017-11-01

    Single-crystal (211) and (100) CdTe layers have been grown by metalorganic vapor-phase epitaxy using the same condition on (211) and (100) Si substrates, respectively. Prior to the growth, substrates of both orientations were pretreated using the same pretreatment procedure. The crystal qualities of the grown layers were evaluated by full-width at half-maximum values of double-crystal x-ray rocking curves, and photoluminescence spectra at 4.2 K. (211) CdTe layers showed better crystallinity than (100) layers. The crystal quality of the (100) CdTe layers was also compared with that of layers grown on an epitaxial (100) GaAs layer on Si substrate. The results suggest that (100) CdTe layers with improved crystal quality could be obtained by optimizing the procedure of the Si substrates.

  3. Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

    2008-01-01

    Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

  4. InGaAsP Solar Cells Grown by Hydride Vapor Phase Epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Nikhil; Simon, John; Schulte, Kevin L.; Dippo, Patricia; Young, Michelle; Young, David L.; Ptak, Aaron J.

    2016-11-21

    Hydride vapor phase epitaxy (HVPE) has recently reemerged as a low-cost, high-throughput alternative to metalorganic chemical vapor deposition (MOCVD) for the growth of high-efficiency III-V solar cells. Quaternary InGaAsP solar cells in the bandgap range of ~1.7-1.8 eV are promising top-cell candidates for integration in Ill-V/Si tandem cells with projected one-sun efficiencies exceeding 30%. In this work, we report on the development of lattice-matched InGaAsP solar cells grown on GaAs substrates via HVPE at very high growth rates of ~0.7 um/min. We demonstrate prototype 1.7 eV InGaAsP solar cells with an open-circuit voltage of 1.11 V. The short-circuit current is limited by the lack of a window layer in these early stage devices. The photo response of 1.7 InGaAsP solar cell with ~1.1 um thick base layer is found to be nearly insensitive to variation in p-type base doping concentration in the range from Na - 4x1016 to - 1x1017 cm-3, indicating an effective carrier collection length on the order of - 1.1 um or higher in our devices. These initial InGaAsP cell results are encouraging and highlight the viability of HVPE to produce mixed arsenide-phosphide solar cells grown lattice-matched on GaAs.

  5. A model for arsenic anti-site incorporation in GaAs grown by hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, K. L.; Kuech, T. F. [Department of Chemical and Biological Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2014-12-28

    GaAs growth by hydride vapor phase epitaxy (HVPE) has regained interest as a potential route to low cost, high efficiency thin film photovoltaics. In order to attain the highest efficiencies, deep level defect incorporation in these materials must be understood and controlled. The arsenic anti-site defect, As{sub Ga} or EL2, is the predominant deep level defect in HVPE-grown GaAs. In the present study, the relationships between HVPE growth conditions and incorporation of EL2 in GaAs epilayers were determined. Epitaxial n-GaAs layers were grown under a wide range of deposition temperatures (T{sub D}) and gallium chloride partial pressures (P{sub GaCl}), and the EL2 concentration, [EL2], was determined by deep level transient spectroscopy. [EL2] agreed with equilibrium thermodynamic predictions in layers grown under conditions in which the growth rate, R{sub G}, was controlled by conditions near thermodynamic equilibrium. [EL2] fell below equilibrium levels when R{sub G} was controlled by surface kinetic processes, with the disparity increasing as R{sub G} decreased. The surface chemical composition during growth was determined to have a strong influence on EL2 incorporation. Under thermodynamically limited growth conditions, e.g., high T{sub D} and/or low P{sub GaCl}, the surface vacancy concentration was high and the bulk crystal was close to equilibrium with the vapor phase. Under kinetically limited growth conditions, e.g., low T{sub D} and/or high P{sub GaCl}, the surface attained a high GaCl coverage, blocking As adsorption. This competitive adsorption process reduced the growth rate and also limited the amount of arsenic that incorporated as As{sub Ga}. A defect incorporation model which accounted for the surface concentration of arsenic as a function of the growth conditions, was developed. This model was used to identify optimal growth parameters for the growth of thin films for photovoltaics, conditions in which a high growth rate and low [EL2] could be

  6. Properties of (In,Ga)(As,P)/GaAs interfaces grown under different metalorganic vapor phase epitaxy conditions

    Science.gov (United States)

    Knauer, A.; Krispin, P.; Balakrishnan, V. R.; Weyers, M.

    2003-02-01

    The mechanisms for formation of interlayers at the interface of GaAs on (In,Ga)P and In 0.15Ga 0.85As 0.7P 0.3 grown by metalorganic vapor phase epitaxy have been studied by capacitance-voltage profiling of the electron concentration. Shallow In-rich quantum wells (QWs) are formed in (In,Ga)P during growth interruptions under PH 3 stabilization. These QWs are seen in C-V profiles, but not in photoluminescence and X-ray diffraction. Stabilization of (In,Ga)P under AsH 3 yields thin (1-2 nm thick) (In,Ga)(As,P) interlayers, which are observed by X-ray diffraction and capacitance-voltage profiles. Under optimized conditions, these interlayers exhibit negligibly small band offsets. When growing GaAs on quaternary (In,Ga)(As,P), interlayers can be avoided even at high growth temperatures and long growth interruptions. Independent on the chosen growth conditions, the (In,Ga)P and (In,Ga)(As,P) layers as well as the investigated interfaces are practically free of defect levels as determined by deep-level transient Fourier spectroscopy.

  7. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzén, Erik; Hemmingsson, Carl [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-581 83 Linköping (Sweden); Ohshima, Takeshi [Japan Atomic Energy Agency (JAEA), Takasaki, Gunma 370-1292 (Japan)

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}–0.24 eV), D3 (E{sub C}–0.60 eV), D4 (E{sub C}–0.69 eV), D5 (E{sub C}–0.96 eV), D7 (E{sub C}–1.19 eV), and D8, were observed. After 2 MeV electron irradiation at a fluence of 1 × 10{sup 14 }cm{sup −2}, three deep electron traps, labeled D1 (E{sub C}–0.12 eV), D5I (E{sub C}–0.89 eV), and D6 (E{sub C}–1.14 eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  8. Vapor phase growth of functional pentacene films at atmospheric pressure

    NARCIS (Netherlands)

    Rolin, C.; Vasseur, K.; Niesen, B.; Willegems, M.; Müller, R.; Steudel, S.; Genoe, J.; Heremans, P.

    2012-01-01

    Compared to traditional vacuum evaporation techniques for small organic molecules, organic vapor phase deposition (OVPD) possesses a extra processing parameter: the pressure of process gas Pch. Here, the influence of large Pch variations (from 0.1 mbar to atmospheric pressure) on pentacene thin film

  9. Bulk GaN substrate with overall dislocation density on the order of 105/cm2 fabricated by hydride vapor phase epitaxy

    Science.gov (United States)

    Goubara, Shin; Matsubara, Tohoru; Yukizane, Kota; Arita, Naoki; Fujimoto, Satoru; Ezaki, Tatsuya; Inomoto, Ryo; Yamane, Keisuke; Okada, Narihito; Tadatomo, Kazuyuki

    2017-11-01

    In this study, a combined facet and flattening (FF) growth technique was implemented to fabricate GaN substrates by hydride vapor phase epitaxy. By changing the growth conditions, i.e., the growth temperature and V/III ratio, it was found that facet growth was promoted with a high V/III ratio and low temperature and planar growth was promoted with low V/III ratios and high temperature. We introduce a FF growth technique involving further reduction of the dislocation density using facet growth as the first step and flattening growth of the GaN layer as the second step. To further reduce dislocation density, we also finally demonstrate a multiple-step growth technique based on FF growth and succeeded in producing GaN substrates with overall dislocation densities on the order of 105 cm-2.

  10. Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

    Science.gov (United States)

    Barchuk, M.; Lukin, G.; Zimmermann, F.; Röder, C.; Motylenko, M.; Pätzold, O.; Heitmann, J.; Kortus, J.; Rafaja, D.

    2017-03-01

    High-temperature vapor phase epitaxy (HTVPE) is a physical vapor transport technology for a deposition of gallium nitride (GaN) layers. However, little is known about the influence of the deposition parameters on the microstructure of the layers. In order to fill this gap, the influence of the ammonia (NH3) flow applied during the HTVPE growth on the microstructure of the deposited GaN layers is investigated in this work. Although the HTVPE technology is intended to grow GaN layers on foreign substrates, the GaN layers under study were grown on GaN templates produced by metal organic vapor phase epitaxy in order to be able to separate the growth defects from the defects induced by the lattice misfit between the foreign substrate and the GaN layer. The microstructure of the layers is characterized by means of high-resolution x-ray diffraction (XRD), transmission electron microscopy and photoluminescence. In samples deposited at low ammonia flow, planar defects were detected, along which the nitrogen atoms are found to be substituted by impurity atoms. The interplay between these planar defects and the threading dislocations is discussed. A combination of XRD and micro-Raman spectroscopy reveals the presence of compressive residual stress in the samples.

  11. Influence of the V/III ratio in the gas phase on thin epitaxial AlN layers grown on (0001) sapphire by high temperature hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Claudel, A., E-mail: arnaud.claudel@grenoble-inp.org [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Fellmann, V. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Gélard, I. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Coudurier, N. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Sauvage, D. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Balaji, M. [ACERDE, 354 Voie Magellan — Alpespace, 73800 Ste Hélène du Lac (France); Science et Ingénierie des Matériaux et des Procédés, Grenoble INP-CNRS-UJF, BP 75, 38402 Saint Martin d' Hères (France); Crystal Growth Center, Anna University, Chennai 600025 (India); and others

    2014-12-31

    Thin (0001) epitaxial aluminum nitride (AlN) layers were grown on c-plane sapphire using high temperature hydride vapor phase epitaxy. The experimental set-up consists of a vertical cold-wall quartz reactor working at low pressure in which the reactions take place on a susceptor heated by induction. The reactants used are ammonia and aluminum chlorides in situ formed via hydrogen chloride reaction with high purity aluminum pellets. As-grown AlN layers have been characterized by scanning electron microscopy, atomic force microscopy, X-ray diffraction, transmission electron microscopy, photoluminescence and Raman spectroscopies. The influence of the V/III ratio in the gas phase, from 1.5 to 15, on growth rate, surface morphology, roughness and crystalline quality is investigated in order to increase the quality of thin epitaxial AlN layers grown at high temperature. Typical growth rates of around 0.45 μm/h were obtained for such thin epitaxial AlN layers. The growth rate was unaffected by the V/III ratio. An optimum for roughness, crystalline quality and optical properties seems to exist at V/III = 7.5. As a matter of fact, for a V/III ratio of 7.5, best root mean square roughness and crystalline quality — measured on 0002 symmetric reflection — as low as 6.9 nm and 898 arcsec were obtained, respectively. - Highlights: • Growth of thin epitaxial AlN layers by high temperature hydride vapor phase epitaxy • Influence of V/III ratio on growth rate, morphology and crystalline quality • The effect of surface morphology on strain state and crystal quality is established.

  12. Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Ma, Y.; Du, G. T.; Yang, S. R.; Li, Z. T.; Zhao, B. J.; Yang, X. T.; Yang, T. P.; Zhang, Y. T.; Liu, D. L.

    2004-06-01

    The properties of the ZnO thin films prepared by metalorganic vapor phase epitaxy under various oxygen partial pressures were thoroughly studied. It was found that the conduction type in undoped ZnO epilayers could be controlled by adjusting the family VI precursor, oxygen partial pressure during growth. The films were characteristic of n-type conductivity under oxygen partial pressure lower than 45 Pa. With the increase of oxygen content, the crystallinity of the ZnO thin films was degraded to polycrystalline with additional (10-12) orientation and the intrinsic p-type ZnO was produced as the oxygen partial pressure was larger than 55 Pa. The hole concentration and mobility could reach to 1.59×1016 cm-3 and 9.23 cm2 V-1 s-1, and the resistivity was 42.7 Ω cm. The near-band-edge emission and the deep level emission in photoluminescence (PL) spectra at room temperature were influenced strongly by the oxygen partial pressure. Temperature-dependent PL spectra in n-type ZnO films showed a dominant neutral-donor bound exciton emission, while p-ZnO was dominated by neutral-acceptor bound exciton emission. Both peaks increased in intensity with the decrease of the temperature and shifted to the short-wavelength side. The band that originated from zinc vacancies emerged at a temperature lower than 155 K only in the p-type films. The origin of intrinsic p-type conductivity in ZnO thin films might be related to zinc vacancy.

  13. Polarity control and preparation of AlN nano-islands by hydride vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Nagashima, Toru; Hironaka, Keiichiro; Takada, Kazuya [Tsukuba Research Laboratories, Tokuyama Corporation, 40 Wadai, Tsukuba-shi, Ibaraki 300-4247 (Japan); Ishizuki, Masanari [Tsukuba Research Laboratories, Tokuyama Corporation, 40 Wadai, Tsukuba-shi, Ibaraki 300-4247 (Japan); Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan); Kumagai, Yoshinao; Koukitu, Akinori [Department of Applied Chemistry, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)

    2009-06-15

    Initial growth condition of AlN on sapphire substrate by HVPE was investigated. It was found that polarity of AlN was significantly affected by temperature even under the condition of AlCl{sub 3} pre-flow and that polarity was drastically changed from N-polarity to Al-polarity with increasing temperature around 1000 C. Polarity of AlN was easily controlled by growth temperature. By utilizing these findings and etching technique by alkaline solution, AlN nano-islands were successfully obtained on sapphire substrates. AlN nano-islands had mixture of trapezoid and column structure with 100 nm or less in diameter. Also it had epitaxial relation to sapphire substrates. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

    KAUST Repository

    Lorenz, K.

    2010-09-16

    Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.

  15. Surfactant effects of indium on cracking in AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Miller, C. M.; Korakakis, D.

    2011-01-01

    Aluminum Nitride (AlN) and Gallium Nitride (GaN) superlattice structures are often characterized by a network of cracks resulting from the large lattice mismatch and difference in thermal expansion coefficients, especially as the thickness of the layers increases. This work investigates the influence of indium as a surfactant on strain and cracking in AlN/GaN DBRs grown via Metal Organic Vapor Phase Epitaxy (MOVPE). DBRs with peak reflectivities ranging from 465 nm to 540 nm were grown and indium was introduced during the growth of the AlN layer. Image processing techniques were used to quantify the crack length per square millimeter and it was observed that indium has a significant effect on the crack formation and reduced the total crack length in these structures by a factor of two.

  16. Halide vapor phase epitaxy of thick GaN films on ScAlMgO4 substrates and their self-separation for fabricating freestanding wafers

    Science.gov (United States)

    Ohnishi, Kazuki; Kanoh, Masaya; Tanikawa, Tomoyuki; Kuboya, Shigeyuki; Mukai, Takashi; Matsuoka, Takashi

    2017-10-01

    Halide vapor phase epitaxy of thick GaN films was demonstrated on ScAlMgO4 (SCAM) substrates, and their self-separation was achieved. The 320-µm-thick GaN film was self-separated from the SCAM substrate during the cooling process after the growth. This separation phenomenon occurred because of both the c-plane cleavability of SCAM and the difference in the thermal-expansion coefficients between GaN and SCAM. The dark-spot densities for the GaN films on the SCAM substrates were approximately 30% lower than those on sapphire substrates. These results indicate that SCAM substrates are promising for fabricating a high-quality freestanding GaN wafer at a low cost.

  17. Optimization Problem of Thermal Field on Surface of Revolving Susceptor in Vapor-Phase Epitaxy Reactor

    Science.gov (United States)

    Zhilenkov, A. A.; Chernyi, S. G.; Nyrkov, A. P.; Sokolov, S. S.

    2017-10-01

    Nitrides of group III elements are a very suitable basis for deriving light-emitting devices with the radiating modes lengths of 200-600 nm. The use of such semiconductors allows obtaining full-color RGB light sources, increasing record density of a digital data storage device, getting high-capacity and efficient sources of white light. Electronic properties of such semi-conductors allow using them as a basis for high-power and high-frequency transistors and other electronic devices, the specifications of which are competitive with those of SiC-based devices. Only since 2000, the technology of cultivation of crystals III-N of group has come to the level of wide recognition by both abstract science, and the industry that has led to the creation of the multi-billion dollar market. And this is despite a rather low level of development of the production technology of devices on the basis of III-N of materials. The progress that has happened in the last decade requires the solution of the main problem, constraining further development of this technology today – ensuring cultivation of III-N structures of necessary quality. For this purpose, it is necessary to solve problems of the analysis and optimization of processes in installations of epitaxial growth, and, as a result, optimization of its constructions.

  18. Characteristics of stimulated emission from optically pumped freestanding GaN grown by hydride vapor-phase epitaxy

    CERN Document Server

    Lee, M H; Kim, S T; Chung, S H; Moon, D C

    1999-01-01

    In this study, we observed optically pumped stimulated emission at room temperature in quasi-bulk GaN prepared from thick-film GaN grown on a sapphire substrate by using hydride vapor-phase epitaxy and subsequent mechanical removal of the sapphire substrate. The stimulated emission from the surface and 1-mm-wide-cleaved cavity of the GaN was red-shifted compared to the spontaneous emission by increasing the optical pumping-power density, and the full width at half maximum (FWHM) of the peak decreased. The stimulated emission was demonstrated to have a highly TE-mode polarized nature, and the super-linear dependence of the integrated emission intensity on the excitation power indicated a threshold pump-power density of I sub t sub h = 2 MW/cm sup 2 for one set of stimulated emissions.

  19. Metalorganic vapor phase epitaxy growth, transmission electron microscopy, and magneto-optical spectroscopy of individual InAsxP1 -x/Ga0.5In0.5P quantum dots

    Science.gov (United States)

    Del Pozo-Zamudio, O.; Puebla, J.; Krysa, A.; Toro, R.; Sanchez, A. M.; Beanland, R.; Tartakovskii, A. I.; Skolnick, M. S.; Chekhovich, E. A.

    2017-08-01

    We report on growth and characterization of individual InAsxP1 -x /GaInP quantum dots with variable nominal As molar fraction. Magnetophotoluminescence experiments reveal quantum dot emission in a wide range from 1.3 to 1.8 eV, confirming successful incorporation of As into the quantum dots. Transmission electron microscopy reveals a core-cap structure of InAsP quantum dots with an InAs-rich core capped by an InP-rich layer. Inside the core, an average As molar fraction up to x ≈0.15 is observed. The heavy-hole g factors are found to be strongly dependent on As molar fraction, while the electron g factors are close to the InP values. This suggests type-II carrier confinement in the studied InAsP dots with holes (electrons) localized in the core (cap) region. Finally, dynamic nuclear polarization is observed, which allows for further insight into structural properties using nuclear magnetic resonance.

  20. Investigation of the structural defects in GaN thin films grown by organometallic vapor phase epitaxy

    Science.gov (United States)

    Choi, J.-H.; Lim, S.-J.; Cho, M.-S.; Cho, N.-H.; Chung, S.-J.; Sohn, C.-S.

    2003-02-01

    GaN thin films were prepared on {0001} planes of sapphire substrates by organometallic vapor phase epitaxy (OMVPE) techniques. The crystall orgaphic relation between the film and the substrate as well as the structural features of the defects in the film were investigated by transmission electron microscopy (TEM). Epitaxial relationship was observed in the GaN/sapphire heterostructure prepared in this investigation; (0001) GaN//(0001) sapphire;[ {01bar 10} ] GaN//[ {bar 12bar 10} ] sapphire. Dislocations of Burgers vectorbar b = {1/3} [ {2bar 1bar 10} ] were observed in the film; the propagation behavior of the dislocations exhibits a slip system{ {10bar 10} }< {2bar 1bar 10} rangle is operative in the film. Inversion domain boundary (IDB) facets lying parallel to{ {01bar 10} } and{ {bar 12bar 10} } planes were observed; the type of anti-site bonds (Ga-Ga, N-N) is altemate along these IDB planes, keeping the simple stoichiometry of the compound.

  1. Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    Carvalho Jr Wilson de

    1999-01-01

    Full Text Available We have investigated the optical and the structural properties of strained In1-xGaxAsyP1-y/InP and strain compensated In1-xGaxAsyP1-y/In1-zGazAsqP1-q/InP multi-quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy at different growth conditions. Our results indicate an increase of the compositional fluctuation of quaternary materials as the alloy composition moves from the outer spinodal isotherm into the miscibility gap region. In1-xGaxAsyP1-y layers grown at high tensile strained values exhibit a three-dimensional-like growth mode. Strain compensated structures revealed the presence of a broad photoluminescence emission band below the fundamental quantum well transition, well defined elongated features along the [011] direction and interface undulations. All these effects were found to be strongly dependent on the growth temperature and the number of wells.

  2. High-quality AlN film grown on a nanosized concave-convex surface sapphire substrate by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Yoshikawa, Akira; Nagatomi, Takaharu; Morishita, Tomohiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu

    2017-10-01

    We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo-convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10-12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.

  3. Position-controlled III-V compound semiconductor nanowire solar cells by selective-area metal-organic vapor phase epitaxy.

    Science.gov (United States)

    Fukui, Takashi; Yoshimura, Masatoshi; Nakai, Eiji; Tomioka, Katsuhiro

    2012-01-01

    We demonstrate position-controlled III-V semiconductor nanowires (NWs) by using selective-area metal-organic vapor phase epitaxy and their application to solar cells. Efficiency of 4.23% is achieved for InP core-shell NW solar cells. We form a 'flexible NW array' without a substrate, which has the advantage of saving natural resources over conventional thin film photovoltaic devices. Four junction NW solar cells with over 50% efficiency are proposed and discussed.

  4. High quality factor whispering gallery modes from self-assembled hexagonal GaN rods grown by metal-organic vapor phase epitaxy.

    Science.gov (United States)

    Tessarek, C; Sarau, G; Kiometzis, M; Christiansen, S

    2013-02-11

    Self-assembled GaN rods were grown on sapphire by metal-organic vapor phase epitaxy using a simple two-step method that relies first on a nitridation step followed by GaN epitaxy. The mask-free rods formed without any additional catalyst. Most of the vertically aligned rods exhibit a regular hexagonal shape with sharp edges and smooth sidewall facets. Cathodo- and microphotoluminescence investigations were carried out on single GaN rods. Whispering gallery modes with quality factors greater than 4000 were measured demonstrating the high morphological and optical quality of the self-assembled GaN rods.

  5. Highly c-axis-oriented one-inch square freestanding GaN grown by hydride vapor-phase epitaxy using an AIN deposited on Si

    CERN Document Server

    Lee, M H; Chung, S H; Moon, D C

    1999-01-01

    In this letter, we report on the growth and the properties of freestanding GaN substrates. Large areas of one-inch square with a thickness of a 0.5 mm were grown by the hydride vapor-phase epitaxy (HVPE) method after a thick film of GaN was grown on an AIN buffer layer deposited on a sacrificial Si substrate which was subsequently chemically removed. The GaN substrate showed intensified X-ray diffraction from the (00.2) and the (00.4) planes, and the full width at half maximum of the double-crystal X-ray diffraction curve was as large as 4.2 degrees. The photoluminescence spectra measured at 10 K and at 300 K exhibited a sharp and strong excitonic emission without deep-level emission. They also showed n-type conduction with an electron concentration of approx 1x10 sup 1 sup 8 cm sup - sup 3 and a Hall mobility of 50 cm sup 2 / Vsec. The highly c-axis oriented large-area freestanding GaN prepared using a Si sacrificial substrate by HVPE through this work can be used for homoepitaxial growth of GaN-based optoel...

  6. Fabrication and characterization of freestanding GaAs/AlGaAs core-shell nanowires and AlGaAs nanotubes by using selective-area metalorganic vapor phase epitaxy

    OpenAIRE

    Noborisaka, J.; Motohisa, J.; S. Hara; Fukui, T.

    2005-01-01

    We fabricated GaAs/AlGaAs core-shell nanowires by using selective-area metalorganic vapor phase epitaxy. First, GaAs nanowires were selectively grown on partially masked GaAs (111)B substrates; then AlGaAs was grown to form freestanding heterostructured nanowires. Investigation of nanowire diameter as a function of AlGaAs growth time suggested that the AlGaAs was grown on the sidewalls of the GaAs nanowires, forming GaAs/AlGaAs core-shell structures. Microphotoluminescence measurements of GaA...

  7. Electron mobility enhancement in metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors by control of surface morphology of spacer layer

    Science.gov (United States)

    Yamada, Atsushi; Ishiguro, Tetsuro; Kotani, Junji; Nakamura, Norikazu

    2018-01-01

    We demonstrated low-sheet-resistance metalorganic-vapor-phase-epitaxy-grown InAlN high-electron-mobility transistors using AlGaN spacers with excellent surface morphology. We systematically investigated the effects of AlGaN spacer growth conditions on surface morphology and electron mobility. We found that the surface morphology of InAlN barriers depends on that of AlGaN spacers. Ga desorption from AlGaN spacers was suppressed by increasing the trimethylaluminum (TMA) supply rate, resulting in the small surface roughnesses of InAlN barriers and AlGaN spacers. Moreover, we found that an increase in the NH3 supply rate also improved the surface morphologies of InAlN barriers and AlGaN spacers as long as the TMA supply rate was high enough to suppress the degradation of GaN channels. Finally, we realized a low sheet resistance of 185.5 Ω/sq with a high electron mobility of 1210 cm2 V‑1 s‑1 by improving the surface morphologies of AlGaN spacers and InAlN barriers.

  8. Structural properties of ZnSy Se1-yZnSe/GaAs (001) heterostructures grown by photoassisted metalorganic vapor phase epitaxy

    Science.gov (United States)

    Zhang, X. G.; Kalisetty, S.; Robinson, J.; Zhao, G.; Parent, D. W.; Ayers, J. E.; Jain, F. C.

    1997-06-01

    ZnSySe1-yZnSe/GaAs (001) heterostructures have been grown by photoassisted metalorganic vapor phase epitaxy, using the sources dimethylzinc, dimethylselenium, diethylsulfur, and irradiation by a Hg arc lamp. The solid phase composition vs gas phase composition characteristics have been determined for ZnSyySe1-y grown with different mole fractions of dimethylselenium and different temperatures. Although the growth is not mass-transport controlled with respect to the column VI precursors, the solid phase composition vs gas phase composition characteristics are sufficiently gradual so that good compositional control and lattice matching to GaAs substrates can be readily achieved by photoassisted growth in the temperature range 360°C ≤ T ≤ 400°C. ZnSe/GaAs (001) single heterostructures were grown by a two-step process with ZnSe thicknesses in the range from 54 nm to 776 nm. Based on 004 x-ray rocking curve full width at half maximums (FWHMs), we have determined that the critical layer thickness is hc ≤200 nm. Using the classical method involving strain, lattice relaxation is undetectable in layers thinner than 270 nm for the growth conditions used here. Therefore, the rocking curve FWHM is a more sensitive indicator of lattice relaxation than the residual strain. For ZnSySe1-y layers grown on ZnSe buffers at 400°C, the measured dislocation density-thickness product Dh increases monotonically with the room temperature mismatch. Lower values of the Dh product are obtained for epitaxy on 135 nm buffers compared to the case of 270 nm buffers. This difference is due to the fact that the 135 nm ZnSe buffers are pseudomorphic as deposited. For ZnSySe1-y layers grown on 135 nm ZnSe buffers at 360°C, the minimum dislocation density corresponds approximately to room-temperature lattice matching (y ˜ 5.9%), rather than growth temperature lattice matching (y ˜ 7.6%). Epitaxial layers with lower dislocation densities demonstrated superior optical quality, as judged by

  9. Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

    Science.gov (United States)

    Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

    1986-12-30

    Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

  10. Vapor Phase Growth of ZnO Single Crystals/Thin Films and Attempts for p-type Doping

    OpenAIRE

    Zhang, Xi

    2014-01-01

    The growth of ZnO single crystals and ZnO thin films on Si substrates by an open-system vapor phase method was studied in this thesis. The as-grown ZnO single crystals were investigated by means of photoluminescence (PL). Two unique emissions were observed in virgin and hydrogenated crystals. The up-to-now attempts for the p-type doping of ZnO were summarized and our doping studies were performed using nitrogen and antimony. The seed-free and open-system vapor phase method is a simple and...

  11. Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Arikata, Suguru; Kyono, Takashi [Semiconductor Technologies Laboratory, Sumitomo Electric Industries, LTD., Hyogo (Japan); Miura, Kouhei; Balasekaran, Sundararajan; Inada, Hiroshi; Iguchi, Yasuhiro [Transmission Devices Laboratory, Sumitomo Electric Industries, LTD., Yokohama (Japan); Sakai, Michito [Sensor System Research Group, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Katayama, Haruyoshi [Space Technology Directorate I, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Kimata, Masafumi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan); Akita, Katsushi [Sumiden Semiconductor Materials, LTD., Hyogo (Japan)

    2017-03-15

    InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect-free 200-period SLs with a strain-compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 μm at 4 K and an external quantum efficiency of 31% at 3.5 μm at 20 K. These results indicate that the high-performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

    Science.gov (United States)

    Wei, Tongbo; Yang, Jiankun; Wei, Yang; Huo, Ziqiang; Ji, Xiaoli; Zhang, Yun; Wang, Junxi; Li, Jinmin; Fan, Shoushan

    2016-06-01

    We report a novel method to fabricate high quality 2-inch freestanding GaN substrate grown on cross-stacked carbon nanotubes (CSCNTs) coated sapphire by hydride vapor phase epitaxy (HVPE). As nanoscale masks, these CSCNTs can help weaken the interface connection and release the compressive stress by forming voids during fast coalescence and also block the propagation of threading dislocations (TDs). During the cool-down process, thermal stress-induced cracks are initiated at the CSCNTs interface with the help of air voids and propagated all over the films which leads to full self-separation of FS-GaN substrate. Raman and photoluminescence spectra further reveal the stress relief and crystalline improvement of GaN with CSCNTs. It is expected that the efficient, low cost and mass-producible technique may enable new applications for CNTs in nitride optoelectronic fields.

  13. Occurrence of cubic GaN and strain relaxation in GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates

    Science.gov (United States)

    Cheng, Lisen; Zhou, Kuan; Zhang, Ze; Zhang, Guoyi; Yang, Zhijian; Tong, Yuzhen

    1999-02-01

    Investigations on GaN buffer layers grown by low-pressure metalorganic vapor phase epitaxy on (0001) sapphire substrates indicated that the mechanisms by way of which GaN buffer layers relax stresses introduced by the lattice mismatch and thermal expansion coefficient difference between GaN epilayer and sapphire substrate are related to both the crystallographic structure of GaN and thickness of the buffer layers. Beside forming misfit dislocations, mismatch-induced stresses can also be relaxed by forming stacking faults and microtwin boundaries parallel to (11-1) of GaN near the interface between GaN and sapphire substrate in cubic GaN buffer layers. It was found that, in cubic GaN buffer layers, there exists a critical thickness within which the stacking faults and/or microtwin boundaries parallel to (11-1) of GaN can be formed. This critical value is determined to be 50 nm.

  14. Epitaxial growth of hybrid nanostructures

    Science.gov (United States)

    Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

    2018-02-01

    Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

  15. Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Liang-Yi; Gershon, Talia S.; Haight, Richard A.; Lee, Yun Seog

    2016-12-27

    A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate includes the steps of: depositing a layer of a first kesterite material on the substrate using a vapor phase deposition process, wherein the first kesterite material includes Cu, Zn, Sn, and at least one of S and Se; annealing the first kesterite material to crystallize the first kesterite material; and depositing a layer of a second kesterite material on a side of the first kesterite material opposite the substrate using a solution phase deposition process, wherein the second kesterite material includes Cu, Zn, Sn, and at least one of S and Se, wherein the first kesterite material and the second kesterite material form a multi-layer stack of the absorber material on the substrate. A photovoltaic device and method of formation thereof are also provided.

  16. Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μm

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2011-01-01

    The epitaxial growth of InAs/InGaAsP/InP quantum dots (QDs) for emission around 1.5 mu m by depositing a thin layer of GaAs on top of the QDs is presented in this letter. The infuence of various growth parameters on the properties of the QDs, in particular, size, shape, chemical composition...

  17. Influence of incoherent twin boundaries on the electrical properties of β-Ga2O3 layers homoepitaxially grown by metal-organic vapor phase epitaxy

    Science.gov (United States)

    Fiedler, A.; Schewski, R.; Baldini, M.; Galazka, Z.; Wagner, G.; Albrecht, M.; Irmscher, K.

    2017-10-01

    We present a quantitative model that addresses the influence of incoherent twin boundaries on the electrical properties in β-Ga2O3. This model can explain the mobility collapse below a threshold electron concentration of 1 × 1018 cm-3 as well as partly the low doping efficiency in β-Ga2O3 layers grown homoepitaxially by metal-organic vapor phase epitaxy on (100) substrates of only slight off-orientation. A structural analysis by transmission electron microscopy (TEM) reveals a high density of twin lamellae in these layers. In contrast to the coherent twin boundaries parallel to the (100) plane, the lateral incoherent twin boundaries exhibit one dangling bond per unit cell that acts as an acceptor-like electron trap. Since the twin lamellae are thin, we consider the incoherent twin boundaries to be line defects with a density of 1011-1012 cm-2 as determined by TEM. We estimate the influence of the incoherent twin boundaries on the electrical transport properties by adapting Read's model of charged dislocations. Our calculations quantitatively confirm that the mobility reduction and collapse as well as partly the compensation are due to the presence of twin lamellae.

  18. Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

    Science.gov (United States)

    Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun

    2017-03-01

    Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm-3 and the donor concentration of 3.2 × 1016 cm-3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V-1 s-1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

  19. Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy

    Science.gov (United States)

    Shmidt, N. M.; Usikov, A. S.; Shabunina, E. I.; Chernyakov, A. E.; Sakharov, A. V.; Kurin, S. Yu.; Antipov, A. A.; Barash, I. S.; Roenkov, A. D.; Makarov, Yu. N.; Helava, H.

    2014-07-01

    Final stage of the degradation of the external quantum efficiency of AlGaN/GaN UV light-emitting diodes (LEDs), grown by chloride-hydride vapor-phase epitaxy, and high-power InGaN/GaN blue LEDs, produced by metal-organic vapor-phase epitaxy, has been comparatively studied. It is shown that one of these processes leading to a decrease in the quantum efficiency for both types of LEDs is the local defect formation involving the Gold-Weisberg mechanism in a system of extended defects. To prolong the service life of AlGaN/GaN UV LEDs to more than 2000 h, it is necessary to improve the nanostructural arrangement of the material of light-emitting structures and determine the contribution from the AlGaN composition disorder to the degradation of the external quantum efficiency.

  20. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

    Energy Technology Data Exchange (ETDEWEB)

    Ayari, Taha; Li, Xin; Voss, Paul L.; Ougazzaden, Abdallah, E-mail: aougazza@georgiatech-metz.fr [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States); Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Sundaram, Suresh; El Gmili, Youssef [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Salvestrini, Jean Paul [Georgia Tech Lorraine, UMI 2958, Georgia Tech-CNRS, 57070 Metz (France); Université de Lorraine, LMOPS, EA 4423, 57070 Metz (France)

    2016-04-25

    Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure to be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.

  1. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

    Science.gov (United States)

    Shelton, Christopher T.; Bryan, Isaac; Paisley, Elizabeth A.; Sachet, Edward; Ihlefeld, Jon F.; Lavrik, Nick; Collazo, Ramón; Sitar, Zlatko; Maria, Jon-Paul

    2017-09-01

    A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ˜1 × 104 cm-2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.

  2. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    Christopher T. Shelton

    2017-09-01

    Full Text Available A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm−2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.

  3. Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs

    Science.gov (United States)

    Kuwano, Noriyuki; Nagatomo, Yoshiyuki; Kobayashi, Kenki; Oki, Kensuke; Miyoshi, Seiro; Yaguchi, Hiroyuki; Onabe, Kentaro; Shiraki, Yasuhiro

    1994-01-01

    Cross-sectional transmission electron microscope observation has been performed on the microstructure of GaN films grown on a (001) GaAs substrate by metalorgahic vapor phase epitaxy (MOVPE) using 1,1-dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the sources of nitrogen and gallium, respectively. Before the deposition, the surface of the substrate was nitrided with DMHy. High-resolution images and electron diffraction patterns confirmed that the GaN films have a zincblende structure (β-GaN) with the lattice constant of a GaN=0.454 nm, and contain bands of stacking faults parallel to {111} planes. The interface between GaN and GaAs is made of {111} facets with no interlayer. Misfit dislocations are found to be inserted on the interface approximately every five atomic planes of GaAs. The nitridation treatment with only DMHy for 130 min is found to form a thick layer of β-GaN on the (001) GaAs substrate. Nuclei of β-GaN formed by the pretreatment of surface nitridation play an important role in growing GaN in a zincblende structure during the supply of DMHy and TMG. The formation of facets on the top surface of GaN and on the interface of GaN/GaAs is explained in terms of the diffusion of arsenic in β-GaN. The characteristics of the structure of GaN films grown at 600 and 650° C are also presented.

  4. Synthesis and characterization of a liquid Eu precursor (EuCp{sup pm}{sub 2}) allowing for valence control of Eu ions doped into GaN by organometallic vapor phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mitchell, Brandon, E-mail: bmitchell@wcupa.edu [Department of Physics, West Chester University, West Chester, PA, 19383 (United States); Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan); Koizumi, Atsushi; Nunokawa, Takumi; Wakamatsu, Ryuta; Lee, Dong-gun; Saitoh, Yasuhisa; Timmerman, Dolf [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan); Kuboshima, Yoshinori; Mogi, Takayuki; Higashi, Shintaro; Kikukawa, Kaoru [Kojundo Chemical Laboratory Co., Ltd., 5-1-28 Chiyoda, Sakado, Saitama, 350-0284 (Japan); Ofuchi, Hironori; Honma, Tetsuo [Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, 679-5198 (Japan); Fujiwara, Yasufumi, E-mail: fujiwara@mat.eng.osaka-u.ac.jp [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871 (Japan)

    2017-06-01

    A liquid Eu precursor, bis(normal-propyl-tetramethylcyclopentadienyl)europium has been synthesized. This precursor exists as a liquid at temperatures higher than 49 °C, has a moderately high vapor pressure, contains no oxygen in its molecular structure, and can be distilled to high purity. These properties make it ideal for doping using a chemical vapor or atomic layer deposition method, and provide a degree of control previously unavailable. As a precursor the Eu exists in the divalent valance state, however, once doped into GaN by organometallic vapor phase epitaxy, the room-temperature photoluminescence of the Eu-doped GaN exhibited the typical red emission due to the intra-4f shell transition of trivalent Eu. After variation of the growth temperature, it was found that divalent Eu could be stabilized in the GaN matrix. By tuning the Fermi level through donor doping, the ratio of Eu{sup 2+} to Eu{sup 3+} could be controlled. The change in valence state of the Eu ions was confirmed using X-ray absorption near-edge structure. - Highlights: • A liquid Eu precursor was synthesized and its properties were characterized. • Precursor has a low melting point and a moderately high vapor pressure. • Does not contain oxygen in its molecular structure. • Eu can changed its valance state when incorporated into GaN. • Valence state of Eu in GaN can be controlled by donor doping.

  5. Epitaxy physical principles and technical implementation

    CERN Document Server

    Herman, Marian A; Sitter, Helmut

    2004-01-01

    Epitaxy provides readers with a comprehensive treatment of the modern models and modifications of epitaxy, together with the relevant experimental and technological framework. This advanced textbook describes all important aspects of the epitaxial growth processes of solid films on crystalline substrates, including a section on heteroepitaxy. It covers and discusses in details the most important epitaxial growth techniques, which are currently widely used in basic research as well as in manufacturing processes of devices, namely solid-phase epitaxy, liquid-phase epitaxy, vapor-phase epitaxy, including metal-organic vapor-phase epitaxy and molecular-beam epitaxy. Epitaxy’s coverage of science and texhnology thin-film is intended to fill the need for a comprehensive reference and text examining the variety of problems related to the physical foundations and technical implementation of epitaxial crystallization. It is intended for undergraduate students, PhD students, research scientists, lecturers and practic...

  6. Control growth of silicon nanocolumns' epitaxy on silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chong, Su Kong, E-mail: sukong1985@yahoo.com.my [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia); Dee, Chang Fu [Universiti Kebangsaan Malaysia (UKM), Institute of Microengineering and Nanoelectronics (IMEN) (Malaysia); Yahya, Noorhana [Universiti Teknologi PETRONAS, Faculty of Science and Information Technology (Malaysia); Rahman, Saadah Abdul [University of Malaya, Low Dimensional Materials Research Centre, Department of Physics (Malaysia)

    2013-04-15

    The epitaxial growth of Si nanocolumns on Si nanowires was studied using hot-wire chemical vapor deposition. A single-crystalline and surface oxide-free Si nanowire core (core radius {approx}21 {+-} 5 nm) induced by indium crystal seed was used as a substance for the vapor phase epitaxial growth. The growth process is initiated by sidewall facets, which then nucleate upon certain thickness to form Si islands and further grow to form nanocolumns. The Si nanocolumns with diameter of 10-20 nm and aspect ratio up to 10 can be epitaxially grown on the surface of nanowires. The results showed that the radial growth rate of the Si nanocolumns remains constant with the increase of deposition time. Meanwhile, the radial growth rates are controllable by manipulating the hydrogen to silane gas flow rate ratio. The optical antireflection properties of the Si nanocolumns' decorated SiNW arrays are discussed in the text.

  7. Low-resistivity m-plane freestanding GaN substrate with very low point-defect concentrations grown by hydride vapor phase epitaxy on a GaN seed crystal synthesized by the ammonothermal method

    Science.gov (United States)

    Kojima, Kazunobu; Tsukada, Yusuke; Furukawa, Erika; Saito, Makoto; Mikawa, Yutaka; Kubo, Shuichi; Ikeda, Hirotaka; Fujito, Kenji; Uedono, Akira; Chichibu, Shigefusa F.

    2015-09-01

    An m-plane freestanding GaN substrate satisfying both low resistivity (ρ = 8.5 × 10-3 Ω·cm) and a low point-defect concentration, being applicable to vertically conducting power-switching devices, was grown by hydride vapor phase epitaxy on a nearly bowing-free bulk GaN seed wafer synthesized by the ammonothermal method in supercritical ammonia using an acidic mineralizer. Its threading dislocation and basal-plane staking-fault densities were approximately 104 cm-2 and lower than 100 cm-1, respectively. A record-long fast-component photoluminescence lifetime of 2.07 ns at room temperature was obtained for the near-band-edge emission, reflecting a significantly low concentration of nonradiative recombination centers composed of Ga vacancies.

  8. Metal-organic-vapor-phase-epitaxy and characterization of homoepitaxial ZnO-layers; Metallorganische Gasphasenepitaxie und Charakteriesierung homoepitaktischer ZnO-Schichten

    Energy Technology Data Exchange (ETDEWEB)

    Heinze, Soeren

    2009-03-30

    ZnO is a direct semiconductor with a band gap of 3.37 eV and an exciton binding energy of about 60 meV. By alloying with cadmium or magnesium the band gap can be varied between 2.9 eV and 4 eV, which makes the realization of for instance quantum pot structures. Therefore ZnO is a promising material for optoelectronic applications in the blue and near-ultraviolet spectral range. In spite of world-wide numerous research activities over the last years the realization of p-type ZnO could indeed not sufficiently (i.e. reproduceable and long-time stably) be solved. The ZnO layers of this thesis were fabricated by means of metalorganic gas-phase epitaxy. By means of the studies on heteroepitactically deposed, undoped layers I show the limits of the heteroepitaxy. Although in doping attempts no p-type ZnO could be fabricated. By introduction of a three-stage growth procedure physical properties (morphology, luminescence, crystallographic and electric properties) of the upper ZnO layer could be distinctly improved. On the other hand it was proved that during the fabrication process an electrically high-conductive intermediate layer in the neighbourhood of the substrate/ZnO interface is formed, the formation of which cannot be avoided in the heteroepitaxy. Since about three years ZnO substrates with very good quality are commercially available. Therefore the essential part of this thesis tracts my works on the homoepitaxy of ZnO. For a successful homoepitactical growth a thermal pre-treatment (annealing) of the substrate is necessary. Thereby the substrate is located in a surrounding of ZnO powder and an oxygen atmosphere. The optimal tempering conditions were determined and the influence of these pre-treatment on the physical properties of the substrated were detailedly studied. After the annealing the substrates are suited for the epitaxy. The experiences from the heteroepitaxy could not without more ado be transferred to the homoepitaxy. The quality of the homoepitactical

  9. Growth of Cd0.96Zn0.04Te single crystals by vapor phase gas transport method

    Directory of Open Access Journals (Sweden)

    S. H. Tabatabai Yazdi

    2006-03-01

    Full Text Available   Cd0.96Zn0.04Te crystals were grown using vapor phase gas transport method (VPGT. The results show that dendritic crystals with grain size up to 3.5 mm can be grown with this technique. X-ray diffraction and Laue back-reflection patterns show that dendritic crystals are single-phase, whose single crystal grains are randomly oriented with respect to the gas-transport axis. Electrical measurements, carried out using Van der Pauw method, show that the as-grown crystals have resistivity of about 104 Ω cm and n-type conductivity.

  10. Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer

    Science.gov (United States)

    Kojima, Kazunobu; Tsukada, Yusuke; Furukawa, Erika; Saito, Makoto; Mikawa, Yutaka; Kubo, Shuichi; Ikeda, Hirotaka; Fujito, Kenji; Uedono, Akira; Chichibu, Shigefusa F.

    2016-05-01

    Fundamental electronic and optical properties of a low-resistivity m-plane GaN single crystal, which was grown by hydride vapor phase epitaxy on a bulk GaN seed crystal synthesized by the ammonothermal method in supercritical ammonia using an acidic mineralizer, were investigated. The threading dislocation and basal-plane staking-fault densities of the crystal were around 104 cm-2 and less than 100 cm-1, respectively. Oxygen doping achieved a high electron concentration of 4 × 1018 cm-3 at room temperature. Accordingly, a photoluminescence (PL) band originating from the recombination of hot carriers was observed at low temperatures, even under weak excitation conditions. The simultaneous realization of low-level incorporation of Ga vacancies (VGa) less than 1016 cm-3 was confirmed by using the positron annihilation technique. Consistent with our long-standing claim that VGa complexes are the major nonradiative recombination centers in GaN, the fast-component PL lifetime of the near-band-edge emission at room temperature longer than 2 ns was achieved.

  11. Molecular beam epitaxy growth of germanium junctions for multi-junction solar cell applications

    Science.gov (United States)

    Masuda, T.; Faucher, J.; Lee, M. L.

    2016-11-01

    We report on the molecular beam epitaxy (MBE) growth and device characteristics of Ge solar cells. Integrating a Ge bottom cell beneath a lattice-matched triple junction stack grown by MBE could enable ultra-high efficiencies without metamorphic growth or wafer bonding. However, a diffused junction cannot be readily formed in Ge by MBE due to the low sticking coefficient of group-V molecules on Ge surfaces. We therefore realized Ge junctions by growth of homo-epitaxial n-Ge on p-Ge wafers within a standard III-V MBE system. We then fabricated Ge solar cells, finding growth temperature and post-growth annealing to be key factors for achieving high efficiency. Open-circuit voltage and fill factor values of ~0.175 V and ~0.59 without a window layer were obtained, both of which are comparable to diffused Ge junctions formed by metal-organic vapor phase epitaxy. We also demonstrate growth of high-quality, single-domain GaAs on the Ge junction, as needed for subsequent growth of III-V subcells, and that the surface passivation afforded by the GaAs layer slightly improves the Ge cell performance.

  12. Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition

    Science.gov (United States)

    Bhat, Ishwara B.

    The properties of silicon carbide materials are first reviewed, with special emphasis on properties related to power device applications. Epitaxial growth methods for SiC are then discussed with emphasis on recent results for epitaxial growth by the hot-wall chemical vapor deposition method. The growth mechanism for maintaining the polytype, namely step-controlled epitaxy, is discussed. Also described is the selective epitaxial growth carried out on SiC at the author's laboratory, including some unpublished work.

  13. Organic/Inorganic Epitaxy: Structure & Growth

    Science.gov (United States)

    Eisenberger, Peter

    1996-03-01

    A fundamental understanding of growth at the organic/inorganic interface impacts many different systems, including self assembly of alkane thiols, quasi epitaxy or Van der Waals epitaxy, and in the templating in biological systems. Using grazing incidence X-ray scattering helium diffraction and STM, both the structure and growth of these systems have been studied. While results have been obtained in three very different prototype systems, self assembly of alkane thiols on Au (111), quasi-epitaxial growth of PTCDA on Au (111), and co-assembly of CTAB and Tetraethoxysilane on various substrates, this talk will focus on the growth and structure of the alkane thiols on gold. These studies reveal that there are two distinct growth mechanisms: one temperature independent with a rate proportional to pressure and the other strongly temperature dependent and with a rate proportional to the square of the pressure (suggesting a bimolecular adsorbtion mechanism.) Our results also reveal a complex coverage temperature phase diagram with varying structures at different coverages. These structural results as well as those on other systems will be interpreted in terms of the competition between the film substrate interactions and the interlayer interactions and the strain that results, highlighting the similarities and differences from inorganic epitaxy.

  14. CrystaL Growth and Mechanical Properties of Semiconductor Alloys.

    Science.gov (United States)

    1988-04-14

    these approaches with the following specific studies: an attempt to grow thick films of GaPAs by isothermal vapor phase epitaxy (ISOVPE); Vickers...for understanding the complex plastic behavior in semiconductors. III. Growth of GaPAs epitaxial layers The isothermal vapor phase epitaxial (ISOVPE...films of GaPAs using a GaAs wafer as the substrate and polycrystalline GaP as the source. The experiment was performed at 6750 C for 70 hours. There was

  15. Solution-free and catalyst-free synthesis of ZnO-based nanostructured TCOs by PED and vapor phase growth techniques

    Science.gov (United States)

    Calestani, D.; Pattini, F.; Bissoli, F.; Gilioli, E.; Villani, M.; Zappettini, A.

    2012-05-01

    Zinc oxide (ZnO) is one of the most promising materials for realizing three-dimensional (3D) nanostructured transparent conducting oxides (TCOs) on large scale, because it is cheap, it can be modified with large concentrations of trivalent elements (such Al, Ga or In) and it is characterized by good electron mobility, wide bandgap and visible-range transparency. But, above all, it can be easily obtained in the form of different nanostructures with a large number of growth techniques. A solution-free and catalyst-free approach has been explored here by the vapor phase synthesis of vertically aligned ZnO nanorods on ZnO:Al (AZO) films grown by pulsed electron deposition (PED). The obtained nanostructured TCOs resulted to be homogeneous on large areas and easily patternable by means of mechanical masks. The morphology, crystalline structure, electrical and optical properties of the obtained samples have been characterized in depth. The possible use of such a nanostructured TCO in excitonic (e.g. DSSC) or low-reflectivity traditional solar cells is discussed.

  16. Chirality-Controlled Growth of Single-Wall Carbon Nanotubes Using Vapor Phase Epitaxy: Mechanistic Understanding and Scalable Production

    Science.gov (United States)

    2016-09-15

    the Diels–Alder reaction (reaction 3). The C-C single bond created by reaction 3 can be converted into a double bond via a radical (CH3• or H...nanotubes grown from pretreated C50H10 end-caps possess exceptionally small diameters, we speculate that nanotube diameter-induced stability

  17. Epitaxy of Semiconductors Introduction to Physical Principles

    CERN Document Server

    Pohl, Udo W

    2013-01-01

    Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions t...

  18. Epitaxial growth by monolayer restricted galvanic displacement

    Directory of Open Access Journals (Sweden)

    Vasilić Rastko

    2012-01-01

    Full Text Available The development of a new method for epitaxial growth of metals in solution by galvanic displacement of layers pre-deposited by underpotential deposition (UPD was discussed and experimentally illustrated throughout the lecture. Cyclic voltammetry (CV and scanning tunneling microscopy (STM are employed to carry out and monitor a “quasi-perfect”, two-dimensional growth of Ag on Au(111, Cu on Ag(111, and Cu on Au(111 by repetitive galvanic displacement of underpotentially deposited monolayers. A comparative study emphasizes the displacement stoichiometry as an efficient tool for thickness control during the deposition process and as a key parameter that affects the deposit morphology. The excellent quality of layers deposited by monolayer-restricted galvanic displacement is manifested by a steady UPD voltammetry and ascertained by a flat and uniform surface morphology maintained during the entire growth process.

  19. Shaping metal nanocrystals through epitaxial seeded growth

    Energy Technology Data Exchange (ETDEWEB)

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  20. Growth of strontium ruthenate films by hybrid molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Patrick B. Marshall

    2017-09-01

    Full Text Available We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr2RuO4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electron microscopy. The method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.

  1. Formation technology of flat surface with epitaxial growth on ion-implanted (100)-oriented Si surface of thin silicon-on-insulator

    Science.gov (United States)

    Furukawa, Kiichi; Teramoto, Akinobu; Kuroda, Rihito; Suwa, Tomoyuki; Hashimoto, Keiichi; Sugawa, Shigetoshi; Suzuki, Daisuke; Chiba, Yoichiro; Ishii, Katsutoshi; Shimizu, Akira; Hasebe, Kazuhide

    2017-10-01

    For the development of three-dimensional devices, selective epitaxial growth (SEG) technology has attracted much attention. SEG has been applied to fabricate many devices and it is expected to be used in future manufacturing processes. Therefore, its characteristics must be examined in detail to extend its application. For the fabrication of a three-dimensional device structure, the selectivity of epitaxial growth must be accurately controlled not only on Si and SiO2, but also on different impurity-type silicon surfaces. In this work, we investigated some characteristics of the SEG process, especially focusing on the surface roughness after SEG. Both vapor phase epitaxy (VPE) and solid phase epitaxy (SPE) were performed on ion-implanted silicon-on-insulator (SOI) thin wafers. It was often reported that epitaxial growth is very sensitive to the crystal condition of the substrate on which the films are deposited. However, we first revealed that the impurity type (p- or n-type) and its concentration at the substrate surface markedly changed the roughness and incubation times of the deposition. From our results, SPE with the oxide cap layer formation is effective for maintaining almost the same flatness as the original wafer surface. It is also effective to employ the low-temperature H2/Xe plasma treatment after the SEG to reduce roughness.

  2. Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

    Science.gov (United States)

    Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

    2016-10-01

    Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

  3. Soft Crystals in Flatland: Unraveling Epitaxial Growth.

    Science.gov (United States)

    Ward, Michael D

    2016-07-26

    Thin film epitaxy typically invokes a superposition of a pair of rigid two-dimensional lattices with a well-defined orientation governed by some form of commensurism. A report by Meissner et al. in this issue of ACS Nano demonstrates that the organization of organic molecules on substrates may not be that simple, as static distortion waves involving miniscule shifts of atomic positions from substrate lattice points can lead to orientations of a molecular film that cannot be described by often used models. Herein, we provide some highlights of epitaxy, with a focus on configurations that reflect the delicate balance between intermolecular interactions within a molecular film and molecule-substrate interactions. Although geometric models for explaining and predicting epitaxial configurations can be used to guide synthesis of materials, their use must recognize energetic factors and the possibility of more complex, and possibly less predictable, interface structures.

  4. Epitaxial growth of tungsten nanoparticles on alumina and spinel surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Suarez, T; Lopez-Esteban, S; Pecharroman, C; Esteban-Cubillo, A; Moya, J S [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Cientificas (CSIC), C/ Sor Juana Ines de la Cruz 3, 28049, Cantoblanco, Madrid (Spain); Diaz, L A; Torrecillas, R [Nanomaterials and Nanotechnology Research Center (CINN), Consejo Superior de Investigaciones CientIficas (CSIC), C/ Francisco Pintado Fe 26, 33011, Oviedo, Asturias (Spain); Gremillard, L [Universite de Lyon, INSA-Lyon, MATEIS, UMR CNRS 5510, 20 avenue Albert Einstein, Villeurbanne F-69621 (France)], E-mail: jsmoya@icmm.csic.es

    2008-05-28

    Isolated tungsten nanoparticles ({alpha}-W and {beta}-W phase) were synthesized and epitaxially grown on alumina and spinel particle surfaces with an average tungsten size of {<=}20 nm for a low tungsten content (of {<=}1.5 vol%). Using tungsten (VI) ethoxide alcoholic solutions, tungsten trioxide hydrated precursors were attached to a ceramic grains surface as a nanoparticle coating. High-resolution transmission electron microscopy (HRTEM) micrographs showed epitaxial interfaces between alumina, spinel and metallic tungsten. This epitaxial growth is assumed to be due to the effect of water vapour on the sublimation of ortho-tungstic acid during the reduction process in a hydrogen atmosphere. The planes involved in the epitaxy were found to be (22-bar 0){sub Al2O3} parallel (121){sub W} and (311){sub MgAl2O4} parallel (110){sub W}.

  5. Managing gas purity in epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Succi, M.; Pirola, S. [SAES, Viale Italia 77, 20020 Lainate Mi (Italy); Ruffenach, S.; Briot, O. [Laboratoire Charles Coulomb - UMR 5221 CNRS-UM2, Universite Montpellier 2, Place Eugene Bataillon - CC074, 34095 Montpellier Cedex 5 (France)

    2011-08-15

    The development of high brightness LEDs is being studied worldwide due to the expectation to replace present light sources because of the higher efficiency and estimated lifetime. The deposition of the epitaxial layers is the most critical step of the LED manufacturing process and has to be carried-out in well controlled conditions to get the necessary uniformity of the epitaxial layers and the proper cleanliness. The most common technology to grow the epitaxial layers is MOVPE, a technology that requires a large quantity of gas to transport the precursors into the process reactor. Control of the cleanliness of the gases used during the process (hydrogen, ammonia, arsine, etc) is necessary to obtain highly efficient and reproducible devices. However, even the use of the cleanest gas source cannot avoid the introduction of impurities when the gas is used in the process reactor. In fact there are several causes that can degrade the actual purity level: the degree of emptiness of the source cylinder, improper procedures during the change out of the cylinder or outgassing from the components in the gas distribution system. These effects can be even worse in research centers where the gas consumption is low and not continuous. A common way to get rid of the above mentioned problems is the adoption of point of use purifiers. Results showing the improvements in the gas quality by adopting point of use purifiers will be presented and discussed. The differences between some widely used hydrogen purification technologies in the compound semiconductor applications will also be evaluated. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. The role of step edge diffusion in epitaxial crystal growth

    NARCIS (Netherlands)

    Schinzer, S.; Kinne, M.; Biehl, M.; Kinzel, W.

    1999-01-01

    The role of step edge diffusion (SED) in epitaxial growth is investigated. To this end we revisit and extend a recently introduced simple cubic solid-on-solid model, which exhibits the formation and coarsening of pyramid or mound-like structures. By comparing the limiting cases of absent, very fast

  7. Vapor phase transformer drying – Part II

    OpenAIRE

    Steeves, Gregory R.

    2016-01-01

    Vapor phase drying is the most effective method for drying transformer insulation in a manufacturing setting. The process does not lend itself well to transformer drying in the field for a variety of reasons, including the difficulty of removing residual kerosene which can cause a potential change in transformer oil flash point. Several techniques are available for transformer insulation drying in both the field and in manufacturing. Vapor phase drying as part of transformer manufacturing is ...

  8. Vapor phase transformer drying – Part I

    OpenAIRE

    Steeves, Gregory R.

    2016-01-01

    Vapor phase drying is the most effective method for drying transformer insulation in a manufacturing setting. The process does not lend itself well to transformer drying in the field for a variety of reasons, including the difficulty of removing residual kerosene which can cause a potential change in transformer oil flash point. Several techniques are available for transformer insulation drying in both the field and in manufacturing. Vapor phase drying as part of transformer manufacturing is ...

  9. Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures

    OpenAIRE

    Borgström, Magnus

    2003-01-01

    This thesis deals with the growth, processing and characterization of nano-sized structures, eg., self-assembled quantum dots and nano-wires. Such structures are promising candidates for the realization of nano-scale electronic and optical devices, like for instance single electron transistors, resonant tunneling devices, and single photon emitters. For such purposes, the main focus of this work has been on the controlled growth of self-assembled quantum dots. For epitaxy, which is the fundam...

  10. Atomic Layer Epitaxial Growth of Gaas on Porous Silicon Substrate

    OpenAIRE

    Mohamed Lajnef; Afrah Bardaoui; Isabelle Sagne; Radwan Chtouroua; Hatem Ezzaouia

    2008-01-01

    GaAs thin film has been grown on porous silicon by metal organic chemical vapour deposition (MOCVD) for different growth temperatures using atomic layer epitaxy (ALE) technique. The morphology of GaAs layer was investigated by atomic force microscopy (AFM). The effect of growth temperature is studied using photoluminescence measurements (PL).The photoluminescence spectra revealed a dissymmetry form toward high energies attributed to strain effect resulting from the lattice mismatch between Ga...

  11. Growth-induced electronic properties of epitaxial graphene

    Science.gov (United States)

    First, Phillip

    2012-02-01

    The growth of epitaxial graphene on silicon carbide is challenging to understand and control, yet rife with scientific and technological opportunities. This is due in part to different growth-induced structures such as the ``moire'' alignment of graphene layers in multilayer epitaxial graphene on SiC(0001) and the formation of sidewall ribbons at natural and lithographically-defined SiC(0001) step-bunches (nanofacets). We apply scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the local energy bands of such growth-induced structures. STS at cryogenic temperatures and large magnetic fields creates a comb of discrete Landau level energies that we use to quantitatively characterize the local electronic properties.

  12. Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC.

    Science.gov (United States)

    Xu, Yu; Cao, Bing; Li, Zongyao; Cai, Demin; Zhang, Yumin; Ren, Guoqiang; Wang, Jianfeng; Shi, Lin; Wang, Chinhua; Xu, Ke

    2017-12-20

    "Volmer-Weber" island nucleation and step-flow growth model are the classical processes of the conventional epitaxy of films. However, a growth model of van der Waals epitaxy (vdWE) of films is still not very well-documented. Here, we present an example of vdWE of AlN films on multilayer graphene (MLG)/SiC by hydride vapor phase epitaxy at a high temperature of 1100 °C and reveal the orientation relationship of AlN, MLG, and SiC as (0001)[1-100] AlN ||(0001)[1-100] MLG ||(0001)[11-20] SiC , which suggests that the vdWE heterointerface is not an usual covalent bond and no excessive strain during the growth process owing to the incommensurate in-plane lattices. Remarkably, zigzag cracks are formed because of the anisotropy of strain after the films are cooled down to room temperature, indicating that the growth model of vdWE is different from that of conventional epitaxy. It is a layer-by-layer epitaxy, and a planar substrate without a miscut angle is essential for obtaining single-crystalline films. Additionally, the films can be transferred to foreign substrates by direct mechanical exfoliation without any stressor layer. An ultraviolet photosensor device illustrates an example of III-nitride heterogeneous integration application. Our work demonstrates an excellent step toward the vdWE of varieties of compound films on 2D materials for the applications of transferrable heterogeneous integration in future.

  13. Vapor phase lubrication of high temperature alloys

    Energy Technology Data Exchange (ETDEWEB)

    Hanyaloglu, B.F.; Graham, E.E.; Oreskovic, T.; Hajj, C.G. [Cleveland State Univ., OH (United States)

    1995-06-01

    In a previous study, it was found that when a nickel-based superalloy IN750 was heated to high temperatures, a passive layer of aluminum oxide formed on the surface, preventing vapor phase lubrication. In this study, two nickel-chrome-iron alloys and a nickel-copper alloy were studied for high temperature lubrication to see if these alloys, which contained small amounts of aluminum, would exhibit similar behavior. It was found that under static conditions, all three alloys formed a lubricious nodular coating when exposed to a vapor of aryl phosphate. Under dynamic sliding conditions at 500{degrees}C, these alloys were successfully lubricated with a coefficient of friction of 0.1 and no detectable wear. In order to explain these results, a direct correlation between successful vapor phase lubrication and the composition of the alloys containing aluminum has been proposed. If the ratio of copper/aluminum or iron/aluminum is greater that 100 vapor phase, lubrication will be successful. If the ratio is less than 10, a passive aluminum oxide layer will prevent vapor phase lubrication. By selecting alloys with a high iron or copper content, vapor phase lubrication can provide excellent lubrication at high temperatures. 14 refs., 11 figs., 1 tab.

  14. Liquid phase epitaxial growth of heterostructured hierarchical MOF thin films

    KAUST Repository

    Chernikova, Valeriya

    2017-05-10

    Precise control of epitaxial growth of MOF-on-MOF thin films, for ordered hierarchical tbo-type structures is demonstrated. The heterostructured MOF thin film was fabricated by successful sequential deposition of layers from two different MOFs. The 2-periodic layers, edge-transitive 4,4-square lattices regarded as supermolecular building layers, were commendably cross-linked using a combination of inorganic/organic and organic pillars.

  15. Growth and characterization of Hg1–xCdxTe epitaxial films by ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. Growth of Hg1–xCdxTe epitaxial films by a new technique called asymmetric vapour phase epitaxy. (ASVPE) has been carried out on CdTe and CZT substrates. The critical problems faced in normal vapour phase epitaxy technique like poor surface morphology, composition gradient and dislocation multiplication.

  16. Direct Measurements of Island Growth and Step-Edge Barriers in Colloidal Epitaxy

    KAUST Repository

    Ganapathy, R.

    2010-01-21

    Epitaxial growth, a bottom-up self-assembly process for creating surface nano- and microstructures, has been extensively studied in the context of atoms. This process, however, is also a promising route to self-assembly of nanometer- and micrometer-scale particles into microstructures that have numerous technological applications. To determine whether atomic epitaxial growth laws are applicable to the epitaxy of larger particles with attractive interactions, we investigated the nucleation and growth dynamics of colloidal crystal films with single-particle resolution. We show quantitatively that colloidal epitaxy obeys the same two-dimensional island nucleation and growth laws that govern atomic epitaxy. However, we found that in colloidal epitaxy, step-edge and corner barriers that are responsible for film morphology have a diffusive origin. This diffusive mechanism suggests new routes toward controlling film morphology during epitaxy.

  17. Epitaxial growth of Fe/BaTiO3 heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brivio, S., E-mail: m.gooley@elsevier.com [LNESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100, Como (Italy); Rinaldi, C.; Petti, D.; Bertacco, R. [LNESS, Dipartimento di Fisica, Politecnico di Milano, via Anzani 42, 22100, Como (Italy); Sanchez, F. [Institut de Ciencia de Materials de Barcelona, Consejo Superior de Investigaciones Cientificas, Campus Universitat Autonoma de Barcelona, Bellaterra 08193, Catalunya (Spain)

    2011-06-30

    The realization of epitaxial heterostructures involving ferroelectric (FE) and ferromagnetic (FM) materials is one of the possible routes towards the realization of devices exploiting sizable magnetoelectric effects. In this paper we demonstrate the epitaxial growth of Fe on BaTiO{sub 3}(001) as this system represents a prototypical example of interface between well known FE and FM materials with bcc and perovskite structure respectively, both with Curie temperature well above 300 K. Fe grows on BaTiO{sub 3} with 45 deg. rotation of its cubic lattice with respect to that of the substrate in order to reduce the lattice mismatch. Negligible interdiffusion of Ba and Ti cations or Fe atoms is found by X-ray photoemission spectroscopy, while a sizable Fe oxidation occurs within an interfacial layer with thicknesses thinner than 3 nm.

  18. The Growth of Ultrathin Epitaxial Intermetallic Films

    Science.gov (United States)

    1991-02-11

    interface area. The probably magnetic phase and transition in growth mode occuring at Fe3AI needs to be studied and its magnetic properties determined...Phys. Lett., found that the Burgers vector of the dislocation e*as a[100]. Considering the slip system of the FeAl and GaAs this means that the...Construction of a scanning tunnelling microscope to examine the real space, local structure of the FeAl surface 5. Investigation of the magnetic

  19. Anomalous Epitaxial Growth in Thermally Sprayed YSZ and LZ Splats

    Science.gov (United States)

    Chen, Lin; Yang, Guan-Jun

    2017-08-01

    Thermally sprayed coatings are essentially layered materials, and lamellar interfaces are of great importance to coatings' performances. In the present study, to investigate the microstructures and defect features at thermally sprayed coating interfaces, homoepitaxial 8 mol.% yttria-stabilized zirconia (YSZ) and heteroepitaxial lanthanum zirconia (LZ) films were fabricated. The epitaxial interfaces were examined by high-resolution transmission electron microscope (HR-TEM) in detail. As a result, we report, for the first time, an anomalous incommensurate homoepitaxial growth with mismatch-induced dislocations in thermally sprayed YSZ splats to create a homointerface. We also find the anomalous heteroepitaxial growth in thermally sprayed LZ splats. The mechanism of the anomalous incommensurate growth was analyzed in detail. Essentially, it is a pseudo-heteroepitaxy because of the lattice mismatch between the film and the locally heated substrate, as the locally heated substrate is significantly strained by its cold surroundings. Moreover, the super-high-density dislocations were found in the interfacial region, which resulted from sufficient thermal fluctuations and extremely rapid cooling rates. Both the anomalous lattice mismatch and super-high-density dislocations lead to weak interfaces and violent cracking in thermally sprayed coatings. These were also the essential differences between the conventional and the present epitaxy by thermal spray technique.

  20. Growth and characterization of epitaxial silver indium diselenide

    Science.gov (United States)

    Pena Martin, Pamela

    Photovoltaics (solar cells) are a key player in the renewable energy frontier, and will become increasingly important as their cost per watt continues to drop, especially if fossil fuel costs increase. One particularly promising photovoltaic technology is based on chalcopyrite-structure semiconductors. Within the chalcopyrite compounds the highest efficiency thin film solar cell absorber material to date is Cu(In,Ga)Se2 (CIGS). While current efficiency records are over 21% for single-junction cells, there is still room for improvement. Replacing some of the Cu with Ag has been shown to be beneficial in CIGS devices. However, the Ag- containing chalcopyrites are still relatively unknown in terms of their growth mechanism, energetics, and surface atomic and electronic properties. These are best inferred through study of epitaxial films, yet they have little mention in literature and have not been the subject of a detailed study. This work describes the growth of epitaxial AgInSe2 (AIS) on GaAs substrates, studying the morphology, structure, and surface properties to understand how growth takes place. It also seeks to experimentally determine the surface electronic and atomic structure at the atomic scale to gain insight into the part of the material that forms the heterojunction that collects photon energy in the device. Finally, this work seeks to compare and contrast these findings with what is known about CIGS to determine where similarities and, more importantly, the differences may lie. This study has found that single phase tetragonal AIS can be epitaxially grown on GaAs, as illustrated by x-ray diffraction (XRD), transmission electron microscope (TEM), and surface morphology data. Like CIGS, the close packed polar (112) planes have the lowest energy. The morphology points to a difference in step dynamics, leading to less faceted, straight edged island shapes compared to CIGS. Epitaxial temperature as a function of growth direction shows a different trend in

  1. Growth and structural characterization of III-V nanowires grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dheeraj, D.L.

    2010-10-15

    Heterostructured semiconductor nanowires (NWs) have attracted considerable attention in recent years because of their potential in future nano-electronic and nano-photonic device applications. NWs are usually grown by vapor-liquid-solid (VLS) growth mechanism using techniques such as metal-organic vapor phase epitaxy, chemical beam epitaxy and molecular beam epitaxy (MBE). Of all the available techniques, MBE is known to be the technique which yields highest purity materials. In this study, the growth of GaAs NWs, GaAsSb NWs, as well as GaAs/GaAsSb axial and GaAs/AlGaAs radial heterostructured NWs on GaAs(111)B substrates by MBE is demonstrated. The structural and optical properties of the NWs grown are characterized by electron microscopy techniques such as scanning and transmission electron microscopy, and micro-photoluminescence, respectively. Firstly, the optimum growth conditions to obtain rod shaped GaAs NWs on GaAs(111)B substrates by MBE is determined. It has been found that in-addition to the V/III ratio and substrate temperature, buffer growth conditions also play an important role on the orientation of the NWs. The effect of V/III ratio, substrate temperature, and the arsenic species (As{sub 2}/As{sub 4}) on the morphology of GaAs NWs has been determined. Transmission electron microscopy (TEM) characterization of NWs revealed that GaAs in NW form exhibit wurtzite (WZ) crystal phase in contrast to zinc blende (ZB) phase adapted in its bulk form. Since WZ crystal phase is a metastable phase of GaAs, the WZ GaAs NWs often exhibit stacking faults. The stacking faults are known to be a detrimental problem, if not properly controlled. To gain more insight on the growth kinetics of GaAs NWs grown by MBE, several samples such as GaAs NWs grown for different time durations, and GaAs NWs with three GaAsSb inserts, where GaAsSb inserts acts as markers, have been grown. Interestingly, the growth rates of the GaAs segments and GaAsSb inserts were observed to vary

  2. Topological Insulator Film Growth by Molecular Beam Epitaxy: A Review

    Directory of Open Access Journals (Sweden)

    Theresa P. Ginley

    2016-11-01

    Full Text Available In this article, we will review recent progress in the growth of topological insulator (TI thin films by molecular beam epitaxy (MBE. The materials we focus on are the V2-VI3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have a high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. We close by discussing the bright future for TI film growth by MBE.

  3. Signature of microscale kinetics in mesoscale description of epitaxial growth

    Science.gov (United States)

    Schneider, Joshua P.; Margetis, Dionisios

    2017-08-01

    We describe the effect of kinetic interactions of adsorbed atoms in a mesoscale model of epitaxial growth without elasticity. Our goal is to understand how atomic correlations due to kinetics leave their signature in mechanisms governing the motion of crystal line defects (steps) at the nanoscale. We focus on the key atomistic processes related to external material deposition, desorption, and asymmetric energy barriers on a stepped surface. By starting with a kinetic, restricted solid-on-solid model in 1+1 dimensions, we derive laws that govern the motion of a single step when deposition is nearly balanced out by desorption. These mesoscale laws reveal how kinetic processes, e.g., bond breaking at the step edge, influence step motion via the correlated motion of atoms.

  4. Epitaxial growth of solution deposited Bi2Sr2CaCu2Ox films

    NARCIS (Netherlands)

    Gobel, OF; Du, [No Value; Hibma, T; von Lampe, [No Value; Steiner, U

    The epitaxial growth of Bi2Sr2CaCu2Ox (Bi2212) high temperature superconducting thin films was studied. The films were solution-deposited from a polymer-containing precursor onto SrTiO3 (001) substrates. Bi2212 formed an epitaxial phase with the c-axis parallel to the substrate normal and an in-lane

  5. Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

    Science.gov (United States)

    Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

    2017-10-01

    While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

  6. GaSb film growth by liquid phase epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Garcia-Cruz, M.L.; Martinez-Juarez, J.; Lopez-Salazar, P. [CIDS-ICUAP, BUAP, Av. 14 Sur y San Claudio, C.U. Edif.103C, Col. Sn Manuel, C.P. 72570, Puebla, Pue. (Mexico); Diaz, G.J. [Centro de Investigacion y Estudios Avanzados, IPN, Av. IPN 2508, Col. Sn. Pedro Zacatenco, C.P. 07360, D.F. (Mexico)

    2010-04-15

    Doped GaSb (Gallium Antimonide) films on p-GaSb substrates have been obtained by means of a low-cost and fast-growth method: the liquid phase epitaxy (LPE) technique. The growth temperature was 400 C, and the growth time was varied between1 and 5 min. Characterization of the films was performed by means of high resolution X-ray Diffraction, low temperature-photoluminescence and current-voltage curve measurements. The X-ray diffraction pattern confirms a zincblende-type crystal structure with a high-thin peak centred at 30.36 . The PL spectra at 27 K allowed to confirm the band-gap energy to be 0.8 eV and the I-V curves presented a PN junction behavior which corresponds to the obtained structured. Metal contacts of Au-Zn and Au-Ge were placed to perform electrical characterization (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This SBIR proposal addresses the liquid phase epitaxy (LPE) of gallium nitride (GaN) films using nitrogen-enriched metal solutions. Growth of GaN from solutions...

  8. GaN Bulk Growth and Epitaxy from Ca-Ga-N Solutions Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovations proposed here are Ka-band (38 GHz) group III-nitride power FETs and the dislocation density reducing epitaxial growth methods (LPE) needed for their...

  9. Solution-phase epitaxial growth of quasi-monocrystalline cuprous oxide on metal nanowires

    NARCIS (Netherlands)

    Sciacca, Beniamino; Mann, Sander A.; Tichelaar, Frans D.; Zandbergen, Henny W.; Van Huis, Marijn A.|info:eu-repo/dai/nl/304097586; Garnett, Erik C.

    2014-01-01

    The epitaxial growth of monocrystalline semiconductors on metal nanostructures is interesting from both fundamental and applied perspectives. The realization of nanostructures with excellent interfaces and material properties that also have controlled optical resonances can be very challenging. Here

  10. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  11. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kushvaha, S. S., E-mail: kushvahas@nplindia.org; Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, M.; Singh, S.; Gupta, Bipin K.; Haranath, D. [CSIR- National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi, India 110012 (India)

    2014-02-15

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 10{sup 8} cm{sup −2} at 750 °C) than that of the low temperature grown sample (1.1 × 10{sup 9} cm{sup −2} at 730 °C). A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  12. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  13. Inhibition effects of vapor phase thymol and modified atmosphere against Salmonella spp. on raw shrimp

    Science.gov (United States)

    Salmonella contamination of shrimp is a food safety concern in the U.S. and other countries. Natural antimicrobial compounds (e.g. essential oils) in vapor phase and modified atmosphere (MA) technology can inhibit the growth potential of Salmonella spp. However, each strategy has its limitations, wh...

  14. Recent Advances in Atmospheric Vapor-Phase Deposition of Transparent and Conductive Zinc Oxide

    NARCIS (Netherlands)

    Illiberi, A.; Poodt, P.; Roozeboom, F.

    2014-01-01

    The industrial need for high-throughput and low-cost ZnO deposition processes has triggered the development of atmospheric vapor-phase deposition techniques which can be easily applied to continuous, in-line manufacturing. While atmospheric CVD is a mature technology, new processes for the growth of

  15. Epitaxial Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Growth Mechanism, Controllability, and Scalability

    KAUST Repository

    Li, Henan

    2017-07-06

    Recently there have been many research breakthroughs in two-dimensional (2D) materials including graphene, boron nitride (h-BN), black phosphors (BPs), and transition-metal dichalcogenides (TMDCs). The unique electrical, optical, and thermal properties in 2D materials are associated with their strictly defined low dimensionalities. These materials provide a wide range of basic building blocks for next-generation electronics. The chemical vapor deposition (CVD) technique has shown great promise to generate high-quality TMDC layers with scalable size, controllable thickness, and excellent electronic properties suitable for both technological applications and fundamental sciences. The capability to precisely engineer 2D materials by chemical approaches has also given rise to fascinating new physics, which could lead to exciting new applications. In this Review, we introduce the latest development of TMDC synthesis by CVD approaches and provide further insight for the controllable and reliable synthesis of atomically thin TMDCs. Understanding of the vapor-phase growth mechanism of 2D TMDCs could benefit the formation of complicated heterostructures and novel artificial 2D lattices.

  16. Epitaxial growth and physical properties of Heusler/perovskite heterostructures

    Science.gov (United States)

    Kobayashi, K.; Ueda, K.; Fukatani, N.; Kawada, H.; Sakuma, K.; Asano, H.

    2013-08-01

    Multiferroic heterostructures of the ferromagnetic, half-metallic Heusler Fe2CrSi (FCS) and the ferroelectric perovskite Ba0.7Sr0.3TiO3 (BSTO) have been formed by magnetron sputtering, and their magnetic and ferroelectric properties have been investigated. FCS/BSTO bilayer structures were epitaxially grown on LaAlO3 substrates with epitaxial relationships of FCS (001)[110]//BSTO (001)[100]. Multiferroic properties with a remanent polarization of 10.6 µC/cm2 and a saturation magnetization of 417 emu/cc were observed for the FCS/BSTO heterostructures at room temperature. These results suggest that the Heusler/perovskite epitaxial heterostructure is a promising candidate for fabricating multiferroic devices.

  17. Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN

    NARCIS (Netherlands)

    Tuomisto, F.; Saarinen, K.; Lucznik, B.; Grzegory, I.; Teisseyre, H.; Suski, T.; Porowski, S.; Hageman, P.R.; Likonen, J.

    2005-01-01

    We have used positron annihilation, secondary ion mass spectrometry, and photoluminescence to study the point defects in GaN grown by hydride vapor phase epitaxy (HVPE) on GaN bulk crystals. The results show that N polar growth incorporates many more donor and acceptor type impurities and also Ga

  18. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States)

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  19. Molecular beam epitaxy growth of InSb1−xBix thin films

    DEFF Research Database (Denmark)

    Song, Yuxin; Wang, Shumin; Saha Roy, Ivy

    2013-01-01

    Molecular beam epitaxy growth for InSb1−xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology...

  20. Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

    Science.gov (United States)

    Lee, J. H.; Ke, X.; Misra, R.; Ihlefeld, J. F.; Xu, X. S.; Mei, Z. G.; Heeg, T.; Roeckerath, M.; Schubert, J.; Liu, Z. K.; Musfeldt, J. L.; Schiffer, P.; Schlom, D. G.

    2010-06-01

    We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

  1. GaN:Eu electroluminescent devices grown by interrupted growth epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Munasinghe, C. [Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, OH 45221-0030 (United States); Steckl, A.J. [Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, OH 45221-0030 (United States)]. E-mail: a.steckl@uc.edu

    2006-02-21

    In this paper we report on electroluminescent devices fabricated using Eu-doped GaN films grown by interrupted growth epitaxy (IGE). IGE is a combination of conventional molecular beam epitaxy and migration enhanced epitaxy. It consists of a sequence of ON/OFF cycles of the Ga and Eu beams, while the N{sub 2} plasma is kept constant during the entire growth time. IGE growth of GaN:Eu resulted in significant enhancement in the Eu emission intensity at 620.5 nm. The nitridation of the surface that occurs during the OFF cycle appears to be the dominant process producing the enhancement. Thick dielectric devices fabricated on glass substrates using IGE-grown GaN:Eu have resulted in luminance of {approx}1000 cd/m{sup 2} and luminous efficiency of {approx}0.15 lm/W.

  2. Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

    Science.gov (United States)

    Wang, George T [Albuquerque, NM; Li, Qiming [Albuquerque, NM; Creighton, J Randall [Albuquerque, NM

    2010-03-02

    A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.

  3. Substrate-Independent Epitaxial Growth of the Metal-Organic Framework MOF-508a.

    Science.gov (United States)

    Wilson, M; Barrientos-Palomo, S N; Stevens, P C; Mitchell, N L; Oswald, G; Nagaraja, C M; Badyal, J P S

    2018-01-31

    Plasmachemical deposition is a substrate-independent method for the conformal surface functionalization of solid substrates. Structurally well-defined pulsed plasma deposited poly(1-allylimidazole) layers provide surface imidazole linker groups for the directed liquid-phase epitaxial (layer-by-layer) growth of metal-organic frameworks (MOFs) at room temperature. For the case of microporous [Zn (benzene-1,4-dicarboxylate)-(4,4'-bipyridine) 0.5 ] (MOF-508), the MOF-508a polymorph containing two interpenetrating crystal lattice frameworks undergoes orientated Volmer-Weber growth and displays CO 2 gas capture behavior at atmospheric concentrations in proportion to the number of epitaxially grown MOF-508 layers.

  4. Epitaxial Growth of a Methoxy-Functionalized Quaterphenylene on Alkali Halide Surfaces

    DEFF Research Database (Denmark)

    Balzer, Frank; Sun, Rong; Parisi, Jürgen

    2015-01-01

    The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of lowenergy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X......-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin...

  5. Epitaxial Growth of Single Crystalline GaN Nanowires on (0001) Al2O3

    Science.gov (United States)

    Kehagias, Th; Komninou, Ph; Dimitrakopulos, G. P.; Sahonta, S.-L.; Chèze, C.; Geelhaar, L.; Riechert, H.; Karakostas, Th

    Well-aligned single crystalline GaN nanowires were epitaxially grown on Al2O3 by molecular beam epitaxy. Controlled growth of the nanowires is achieved by tuning the V/III ratio during growth. Oxidised single crystalline catalyst droplets of a cubic symmetry are observed on the top surface of the nanowires. Adaptation of the cubic lattice on the wurtzite tip is realized via the introduction of a dense network of misfit dislocations at the interface. The {100} lattice spacing of the oxide droplets is found to be very close to its strain-free value, indicating almost full relaxation by the misfit dislocation network.

  6. Epitaxial growth of rocksalt Zn1-xMgxO on MgO (100) substrate by molecular beam epitaxy

    Science.gov (United States)

    Wen, M. C.; Lu, S. A.; Chang, L.; Chou, M. M. C.; Ploog, K. H.

    2017-11-01

    Zn1-xMgxO films with x=0.22-0.87 were grown on MgO (100) substrates by molecular beam epitaxy at 400 and 600 °C respectively. The films containing 85% or less ZnO grow epitaxially and retain entirely the rocksalt (rs) crystal structure. The rs-Zn1-xMgxO epilayers have a tunable bandgap energy of 4.5-6.2 eV. In addition, the rs-Zn1-xMgxO epilayer grown at 600 °C exhibits a lower FWHM value of its (200) rocking curve as compared to its low- temperature counterpart. The lattice constant of rs-ZnO at ambient pressure and temperature is obtained to be 4.2766 Å. The sticking coefficient of Mg atoms on rs-ZMO is approximately four times higher than that of ZnO atoms regardless of the growth temperature in the range of 400-600 °C.

  7. Dominantly epitaxial growth of graphene on Ni (1 1 1) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Fogarassy, Zsolt [Hungarian Academy of Sciences, Research Centre for Natural Sciences, Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Rümmeli, Mark H. [IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Daejon 305-701 (Korea, Republic of); Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Gorantla, Sandeep [Leibniz Institute for Solid State Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden (Germany); Bachmatiuk, Alicja [IBS Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Daejon 305-701 (Korea, Republic of); Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Leibniz Institute for Solid State Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden (Germany); Dobrik, Gergely [Hungarian Academy of Sciences, Research Centre for Natural Sciences, Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Kamarás, Katalin [Hungarian Academy of Sciences, Wigner Research Centre for Physics, Institute for Solid State Physics and Optics, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); Biró, László Péter [Hungarian Academy of Sciences, Research Centre for Natural Sciences, Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest (Hungary); and others

    2014-09-30

    Highlights: • Graphene was grown on Ni (1 1 1) thin film substrate by chemical vapor deposition. • Formation of coherently grown epitaxial single layer graphene was observed over 1 mm wide areas also at high substrate temperatures. • On top of the single layer graphene additional graphene and/or graphite flakes also appeared. • Optimization of deposition parameters minimized the amount of flakes. • 20–40 μm wide areas of single layer, single crystal graphene were free of deposits and flakes. - Abstract: Graphene was grown on a Ni (1 1 1) thin layer, used as a substrate. The Ni layer itself was grown on single crystal sapphire (0 0 0 1). Carbon was deposited by chemical vapor deposition using a mixture of methane, argon and hydrogen at atmospheric pressure implementing a constant gas flow (4.8–5 l/min) varying both the gas composition and the deposition temperature (900–980 °C) and cooling rate (8–16 °C/min) in the different experiments. Formation of uninterruptedly grown epitaxial single layer graphene was observed over the Ni (1 1 1) thin film substrate. Epitaxial growth was proven through STM measurements. Electron diffraction studies, also confirmed by STM, demonstrated that only one dominant orientation exists in the graphene, both results providing evidence of the epitaxial growth. On top of the, continuous, large area graphene flakes were also observed with sizes varying between 10 nm and 10 μm. Most of the top flakes are turbostratically related to the continuous underlying epitaxial graphene layer. The formation of the graphene layer with constant dominant orientation was observed over millimeter wide areas. Large areas (≈20–40 μm in diameter) of continuous, epitaxial graphene, free of additional deposits and flakes were obtained for the best set of growth parameters.

  8. SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE

    Directory of Open Access Journals (Sweden)

    Marina G. Mynbaeva

    2016-11-01

    Full Text Available Subject of Research.The paper deals with processes of formation and transformation of defects during multi-stage growth of thick gallium nitride layers with hydride vapor phase epitaxy on GaN/Al2O3 substrates with buried column pattern formed with the use of metal-organic vapor phase epitaxy. Methods. The growth of initial GaN layers was performed with the use of metal-organic vapor phase epitaxy. On the surface of the initial layers columns with the height of 800 nm were generated by means of ion etching. These columns were overgrown with 3-4 µm-thick GaN layers. On thus formed substrate multi-stage growth of GaN layers was performed with the use of hydride vapor-phase epitaxy. The total thickness of GaN layers was 100-1500 µm. The grown layers were studied by optical and electron microscopy and Raman spectroscopy. Main Results. Density of threading dislocations in the layers grown by hydride vapor-phase epitaxy was (3-6·107 cm-2, that was one order of magnitude lower than in the used substrate, and two to three orders lower than dislocation density in typical GaN layers grown on commercial sapphire substrates. Raman spectroscopy data were indicative of low level of mechanical stress in the layers and their high structural uniformity. It was established that under multi-stage growth conditions, non-catastrophic cracks (those that do not cause sample destruction are able to transform into macropores and appear to be an important structural element, serving to stress relaxation in the bulk of thick gallium nitride layers grown on foreign substrates. Practical Relevance. The results of the study can be used in the development of III-nitride heterostructures for optoelectronics and high-power and high-frequency microelectronics.

  9. Comparison of Epitaxial Growth Techniques for III-V Layer Structures

    Science.gov (United States)

    1992-05-22

    by OMVPE. Finally, every one of the epitaxial growth techniques described has found a nitch and is used for the production of a particular material...find its nitch in production. However, the versatility and capability for large scale production already demonstrated for OMVPE make it the favorite to

  10. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  11. Adsorption-controlled molecular-beam epitaxial growth of BiFeO3

    Science.gov (United States)

    Ihlefeld, J. F.; Kumar, A.; Gopalan, V.; Schlom, D. G.; Chen, Y. B.; Pan, X. Q.; Heeg, T.; Schubert, J.; Ke, X.; Schiffer, P.; Orenstein, J.; Martin, L. W.; Chu, Y. H.; Ramesh, R.

    2007-08-01

    BiFeO3 thin films have been deposited on (111) SrTiO3 single crystal substrates by reactive molecular-beam epitaxy in an adsorption-controlled growth regime. This is achieved by supplying a bismuth overpressure and utilizing the differential vapor pressures between bismuth oxides and BiFeO3 to control stoichiometry. Four-circle x-ray diffraction reveals phase-pure, untwinned, epitaxial, (0001)-oriented films with rocking curve full width at half maximum values as narrow as 25arcsec (0.007°). Second harmonic generation polar plots combined with diffraction establish the crystallographic point group of these untwinned epitaxial films to be 3m at room temperature.

  12. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    Science.gov (United States)

    Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  13. Double epitaxy as a paradigm for templated growth of highly ordered three-dimensional mesophase crystals

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Yongsoon; Tao, Jinhui; Arey, Bruce W.; Wang, Chongmin; Exarhos, Gregory J.; De Yoreo, James J.; Sushko, Maria L.; Liu, Jun

    2016-08-30

    Molecular templating and self-assembly are fundamental mechanisms for controlling the morphology of biominerals, while in synthetic two-dimensional layered materials similar levels of control over materials structure can be achieved through the epitaxial relationship with the substrate. In this study these two concepts are combined to provide an approach for the nucleation and growth of three-dimensional ordered mesophases on solid surfaces. A combined experimental and theoretical study revealed how atomic ordering of the substrate controls the structure of surfactant template and the orientation and morphology of the epitaxially grown inorganic material. Such dual epitaxial relationship between the substrate, surfactant template and inorganic mesophase gives rise to a highly ordered porous mesophase with a well-defined cubic lattice of pores. The level of control over material’s three-dimensional architecture achieved in this one-step synthesis is reminiscent to that in biomineralization.

  14. Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

    Science.gov (United States)

    Kunc, J.; Rejhon, M.; Belas, E.; Dědič, V.; Moravec, P.; Franc, J.

    2017-10-01

    In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We measure in situ residual gas content during epitaxial-graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial-graphene growth. The growth conditions in high vacuum, in argon, purified argon, and the flow of argon are compared. The grown epitaxial graphene is studied by Raman-scattering mapping. We determine mechanical strain, number of graphene layers and the graphene quality. The surface topography is measured by atomic force microscopy. Charge density and carrier mobility are studied by Hall-effect measurements in van der Pauw configuration. We identify the major role of the chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show that, according to time-varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of residual gas and SiC is discussed as one of the factors decreasing the lateral size of SiC atomically flat terraces and leading to their irregular shape. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides a more stable and defined growth ambient.

  15. Hydrothermal epitaxial growth of ZnO films on sapphire substrates presenting epitaxial ZnAl{sub 2}O{sub 4} buffer layers

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hou-Guang, E-mail: houguang@isu.edu.tw; Wang, Chi-Wei; Tu, Zhi-Fan

    2014-03-01

    This article describes our investigation of the hydrothermal epitaxial growth of c-plane ZnO films on Al{sub 2}O{sub 3} substrates presenting ZnAl{sub 2}O{sub 4} buffer layers. We obtained (111) ZnAl{sub 2}O{sub 4} epitaxial layers on a-plane Al{sub 2}O{sub 3} substrates readily through solid phase epitaxy. Although the ZnAl{sub 2}O{sub 4} buffer layers grew epitaxially with a (111) out-of-plane orientation and comprised two coexisting equivalent azimuthal variants with relative 180° in-plane rotation, the ZnO epitaxial films grown upon them exhibited a c-plane orientation with unitary in-plane epitaxial orientation of <11{sup ¯}00>{sub ZnO}∥<11{sup ¯}0>{sub ZnAl{sub 2O{sub 4}}} on the two different ZnAl{sub 2}O{sub 4} variants. Taking the coincidence of the site lattices between the (0001) plane of ZnO and the (111) plane of ZnAl{sub 2}O{sub 4} into account, a reduction in lattice misfit was achieved through a 30° rotation between the lattices of the ZnO and the ZnAl{sub 2}O{sub 4}. We used X-ray diffraction and transmission electron microscopy to obtain detailed microstructural views of the hydrothermally grown ZnO epitaxial films on the ZnAl{sub 2}O{sub 4} buffer layers. - Highlights: • The c-plane ZnO films were epitaxially grown on Al{sub 2}O{sub 3} substrates presenting ZnAl{sub 2}O{sub 4} buffer layers. • We obtained (111) ZnAl{sub 2}O{sub 4} epitaxial layers on a-plane Al{sub 2}O{sub 3} substrates through solid phase epitaxy. • The ZnAl{sub 2}O{sub 4} layers comprised two equivalent azimuthal variants with relative 180° in-plane rotation. • The c-plane ZnO epitaxial films grown on ZnAl{sub 2}O{sub 4} layers with an in-plane relationship of <11{sup ¯}00>{sub ZnO}∥<11{sup ¯}0>{sub ZnAl{sub 2O{sub 4}}}.

  16. Epitaxial Growth and Band Structure of Te Film on Graphene.

    Science.gov (United States)

    Huang, Xiaochun; Guan, Jiaqi; Lin, Zijian; Liu, Bing; Xing, Shuya; Wang, Weihua; Guo, Jiandong

    2017-08-09

    Tellurium (Te) films with monolayer and few-layer thickness are obtained by molecular beam epitaxy on a graphene/6H-SiC(0001) substrate and investigated by in situ scanning tunneling microscopy and spectroscopy (STM/STS). We reveal that the Te films are composed of parallel-arranged helical Te chains flat-lying on the graphene surface, exposing the (1 × 1) facet of (101̅0) of the bulk crystal. The band gap of Te films increases monotonically with decreasing thickness, reaching the near-infrared band for the monolayer Te. An explicit band bending at the edge between the monolayer Te and graphene substrate is visualized. With the thickness controlled in the atomic scale, Te films show potential applications of electronics and optoelectronics.

  17. Epitaxial growth of Ge-Sb-Te based phase change materials

    Energy Technology Data Exchange (ETDEWEB)

    Perumal, Karthick

    2013-07-30

    Ge-Sb-Te based phase change materials are considered as a prime candidate for optical and electrical data storage applications. With the application of an optical or electrical pulse, they can be reversibly switched between amorphous and crystalline state, thereby exhibiting large optical and electrical contrast between the two phases, which are then stored as information in the form of binary digits. Single crystalline growth is interesting from both the academic and industrial perspective, as ordered Ge-Sb-Te based metamaterials are known to exhibit switching at reduced energies. The present study deals with the epitaxial growth and analysis of Ge-Sb-Te based thin films. The first part of the thesis deals with the epitaxial growth of GeTe. Thin films of GeTe were grown on highly mismatched Si(111) and (001) substrates. On both the substrate orientations the film grows along [111] direction with an amorphous-to-crystalline transition observed during the initial stages of growth. The amorphous-to-crystalline transition was studied in-vivo using azimuthal reflection high-energy electron diffraction scans and grazing incidence X-ray diffraction. In the second part of the thesis epitaxy and characterization of Sb{sub 2}Te{sub 3} thin films are presented. The third part of the thesis deals with the epitaxy of ternary Ge-Sb-Te alloys. The composition of the films are shown to be highly dependent on growth temperatures and vary along the pseudobinary line from Sb{sub 2}Te{sub 3} to GeTe with increase in growth temperatures. A line-of-sight quadrupole mass spectrometer was used to reliably control the GeSbTe growth temperature. Growth was performed at different Ge, Sb, Te fluxes to study the compositional variation of the films. Incommensurate peaks are observed along the [111] direction by X-ray diffraction. The possibility of superstructural vacancy ordering along the [111] direction is discussed.

  18. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

    Energy Technology Data Exchange (ETDEWEB)

    Jayachandran, Suseendran, E-mail: suseendran.jayachandran@imec.be [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Billen, Arne [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium); Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo [Imec, Kapeldreef 75, 3001 Leuven (Belgium); Vandervorst, Wilfried [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Physics and Astronomy, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Heyns, Marc [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Metallurgy and Materials, Castle Arenberg 44, B-3001 Leuven (Belgium); Delabie, Annelies [Imec, Kapeldreef 75, 3001 Leuven (Belgium); KU Leuven (University of Leuven), Department of Chemistry, Celestijnenlaan 200F, B-3001 Leuven (Belgium)

    2016-10-30

    Highlights: • O{sub 3} or O{sub 2} exposures on H-Si(100) result in O ALs with different surface structures. • Si-EPI on O AL using O{sub 3} process is by direct epitaxial growth mechanism. • Si-EPI on O AL using O{sub 2} process is by epitaxial lateral overgrowth mechanism. • Distortions by O AL, SiH{sub 4} flux rate and Si thickness has an impact on Si-EPI quality. - Abstract: The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O{sub 3}) or oxygen (O{sub 2}) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH{sub 4}) at 500 °C. After O{sub 3} exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH{sub 4} reactants, allowing more time for surface diffusion. After O{sub 2} exposure, the O atoms are present in the form of SiO{sub x} clusters. Regions of hydrogen-terminated Si remain present between the SiO{sub x} clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

  19. The liquid to vapor phase transition in excited nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Elliott, J.B.; Moretto, L.G.; Phair, L.; Wozniak, G.J.; Beaulieu, L.; Breuer, H.; Korteling, R.G.; Kwiatkowski, K.; Lefort, T.; Pienkowski, L.; Ruangma, A.; Viola, V.E.; Yennello, S.J.

    2001-05-08

    For many years it has been speculated that excited nuclei would undergo a liquid to vapor phase transition. For even longer, it has been known that clusterization in a vapor carries direct information on the liquid-vapor equilibrium according to Fisher's droplet model. Now the thermal component of the 8 GeV/c pion + 197 Au multifragmentation data of the ISiS Collaboration is shown to follow the scaling predicted by Fisher's model, thus providing the strongest evidence yet of the liquid to vapor phase transition.

  20. Antimicrobial effects of vapor phase thymol, modified atmosphere and their combination against Salmonella spp. on raw shrimp

    Science.gov (United States)

    Salmonella contamination of raw shrimp is a food safety concern in the U.S. and other countries. This research evaluated the effects of vapor phase thymol, modified atmosphere (MA) and their combination against Salmonella spp. on raw shrimp. Growth profiles of a Salmonella spp. cocktail (6 strains),...

  1. Epitaxial growth of a methoxy-functionalized quaterphenylene on alkali halide surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Balzer, F., E-mail: fbalzer@mci.sdu.dk [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Sun, R. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Parisi, J. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany); Rubahn, H.-G. [University of Southern Denmark, Mads Clausen Institute, Alsion 2, DK-6400 Sønderborg (Denmark); Lützen, A. [University of Bonn, Kekulé Institute of Organic Chemistry and Biochemistry, Gerhard-Domagk-Str. 1, D-53121 Bonn (Germany); Schiek, M. [University of Oldenburg, Energy and Semiconductor Research Laboratory, Institute of Physics, Carl-von-Ossietzky-Str. 9-11, D-26111 Oldenburg (Germany)

    2015-12-31

    The epitaxial growth of the methoxy functionalized para-quaterphenylene (MOP4) on the (001) faces of the alkali halides NaCl and KCl and on glass is investigated by a combination of low energy electron diffraction (LEED), polarized light microscopy (PLM), atomic force microscopy (AFM), and X-ray diffraction (XRD). Both domains from upright molecules as well as fiber-like crystallites from lying molecules form. Neither a wetting layer from lying molecules nor widespread epitaxial fiber growth on the substrates is detected. Our results focus on the upright standing molecules, which condense into a thin film phase with an enlarged layer spacing compared to the bulk phase. - Highlights: • Growth of a methoxy-functionalized para-phenylene on dielectric surfaces is investigated. • Low-energy electron diffraction and X-ray diffraction techniques are employed for structural characterization. • Epitaxial growth of upright molecules only is documented. • Polarized optical microscopy together with atomic force microscopy complements the findings.

  2. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Lastras-Martínez, A., E-mail: alm@cactus.iico.uaslp.mx, E-mail: alastras@gmail.com; Ortega-Gallegos, J.; Guevara-Macías, L. E.; Nuñez-Olvera, O.; Balderas-Navarro, R. E.; Lastras-Martínez, L. F. [Instituto de Investigación en Comunicación Optica, Universidad Autónoma de San Luis Potosí, Alvaro Obregón 64, San Luis Potosí, SLP 78000 (Mexico); Lastras-Montaño, L. A. [IBM T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Lastras-Montaño, M. A. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106 (United States)

    2014-03-01

    We report on real time-resolved Reflectance-difference (RD) spectroscopy of GaAs(001) grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  3. Real-time reflectance-difference spectroscopy of GaAs molecular beam epitaxy homoepitaxial growth

    Directory of Open Access Journals (Sweden)

    A. Lastras-Martínez

    2014-03-01

    Full Text Available We report on real time-resolved Reflectance-difference (RD spectroscopy of GaAs(001 grown by molecular beam epitaxy, with a time-resolution of 500 ms per spectrum within the 2.3–4.0 eV photon energy range. Through the analysis of transient RD spectra we demonstrated that RD line shapes are comprised of two components with different physical origins and determined their evolution during growth. Such components were ascribed to the subsurface strain induced by surface reconstruction and to surface stoichiometry. Results reported in this paper render RD spectroscopy as a powerful tool for the study of fundamental processes during the epitaxial growth of zincblende semiconductors.

  4. Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A. [Institut National des Sciences Appliquees (INSA), 69 - Villeurbanne (France). Lab. de Physique de la Matiere; Ouldabbes, A.; Chabane-Sari, N.E. [Institut National des Sciences Appliquees (INSA), 69 - Villeurbanne (France). Lab. de Physique de la Matiere; Lab. des Materiaux et Energies Renouvelables, Tlemcen (Algeria)

    2001-07-01

    The aim of this experiment is to grow a thin silicon layer (<50{mu}m) by liquid phase epitaxy (LPE) onto porous silicon. This one acts as a sacrificial layer in order to transfer the 50 {mu}m epitaxial layer onto foreign substrates like ceramics. After transfer, the silicon wafer is then re-usable. In this work, we used the following procedure : the porous silicon formation by HF anodisation on (100) or (111) Si wafers is realised in first step, followed by an eventual annealing in H{sub 2} atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

  5. Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compounds

    Science.gov (United States)

    Schlom, D. G.; Marshall, A. F.; Sizemore, J. T.; Chen, Z. J.; Eckstein, J. N.

    1990-05-01

    The in situ epitaxial growth of Bi-Sr-Ca-Cu-O films by molecular beam epitaxy (MBE) is reported. The suitability of various oxidants for the MBE growth of cuprate superconductors is discussed, and the use of ozone described. Molecular beams of the constituents were periodically shuttered to grow various Bi2Sr2Ca(n-1)Cu(n)O(x) phases, including 2201, 2212, 2223, 2245, and layered 2212/2223 and 2223/2234 mixtures. Some of the films grown in this way were superconducting as grown. The ability of MBE to grow layered, probably metastable Bi2Sr2Ca(n-1)Cu(n)O(x) films is demonstrated.

  6. Epitaxial Growth, Surface, and Electronic Properties of Unconventional Semiconductors: RE-V/III-V Nanocomposites and Semiconducting Half Heusler Alloys

    Science.gov (United States)

    2014-09-01

    groundwork for future studies on all-Heusler heterostructures . 2 UNIVERSITY of CALIFORNIA Santa Barbara Epitaxial growth, surface, and electronic...Schultz, and C. J. Palmstrøm. Growth and transport properties of epitaxial lattice matched Half Heusler Co- TiSb/InAlAs/InP(001) heterostructures . Appl...and nanowires via directed electrochemical nanowire assembly. Nano Lett., 11, 191901 (2011). 5. N. Ferralis, J. K. Kawasaki, R. Maboudian, and C

  7. Growth of photovoltaic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Yablonovitch, E. (Bell Communications Research, Red Bank, NJ (United States)); Stringfellow, G.B. (Univ. of Utah, Salt Lake City (United States)); Greene, J.E. (Univ. of Illinois, Urbana (United States))

    1993-01-01

    We assess the opportunities for improving the quality and lowering the cost of thin crystalline semiconductor films for photovoltaics. We find that novel growth and processing methods can lower the cost of crystalline semiconductor films to satisfy the economic conditions for a major expansion of the photovoltaic industry. The research requirements are in the areas of novel precursors for vapor phase growth, atomic layer epitaxy for unprecedented control, and the requirement for novel in situ and ex situ probes to ensure that the new growth methods are producing the utmost in photovoltaic material quality. 42 refs.

  8. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates

    Science.gov (United States)

    Collar, Kristen N.; Li, Jincheng; Jiao, Wenyuan; Kong, Wei; Brown, April S.

    2018-01-01

    We report on enhanced control of the growth of lateral GaAs nanowires (NWs) embedded in epitaxial (100) GaAsBi thin films enabled by the use of vicinal substrates and the growth-condition dependent role of Bi as a surfactant. Enhanced step-flow growth is achieved through the use of vicinal substrates and yields unidirectional nanowire growth. The addition of Bi during GaAsBi growth enhances Ga adatom diffusion anisotropy and modifies incorporation rates at steps in comparison to GaAs growth yielding lower density but longer NWs. The NWs grown on vicinal substrates grew unidirectionally towards the misorientation direction when Bi was present. The III/V flux ratio significantly impacts the size, shape and density of the resulting NWs. These results suggest that utilizing growth conditions which enhance step-flow growth enable enhanced control of lateral nanostructures.

  9. Pendeo-epitaxial Growth and Characterization of III-Nitride Thin Films on SiC(0001) and Si(111) Substrates

    Science.gov (United States)

    Davis, Robert

    2002-03-01

    Conventional heteroepitaxial growth of GaN on low temperature GaN or AlN buffer layers previously deposited on Al2O3 and SiC substrates results in films containing a high dislocation density (1E8-1E10 cm-2) due to the lattice mismatches between the buffer layer and the film and/or the buffer layer and the substrate. The objective of this research has been the significant reduction in dislocation density in GaN thin films via special methods of metallorganic vapor phase growth. Lateral epitaxial overgrowth (LEO) of GaN stripes patterned in an SiO2 mask deposited on GaN film/AlN buffer layer/6H-SiC(0001) substrates was the initial method. The mask contained 3mm and 5mm wide stripe openings, spaced parallel at 3-40 mm, and oriented along and in the GaN film. The deposited material grew vertically to the top of the mask and then both laterally over the mask and vertically until coalescence. Threading dislocations, originating from the GaN/AlN buffer layer interface, propagated to the top surface of the regrown GaN layer within the window regions of the mask. By contrast, there were no observable threading dislocations in the overgrown portions of the layer. The few dislocations observed formed parallel to (0001) plane via the extension of the vertical threading dislocations after a 90^o bend in the regrown region. They did not subsequently propagate to the surface of the overgrown GaN layers. Recently we have pioneered a new process for selective epitaxy of GaN and AlGaN layers with a low-defect density, namely, pendeo (from the Latin: to hang or be suspended from)-epitaxy (PE). It incorporates mechanisms of growth exploited by conventional lateral overgrowth processes by using masks to prevent vertical propagation of threading defects, and extends the phenomenon to employ the substrate itself as a pseudo-mask. The growth does not initiate through open windows, rather it begins on sidewalls of forms etched into a seed layer and continues until coalescence over and

  10. Epitaxial growth and spectroscopic investigation of BaSO4:Mn6+ layers

    NARCIS (Netherlands)

    Ehrentraut, D.; Pollnau, Markus; Kück, S.

    2002-01-01

    We report on the first layer growth of a Mn6+-doped material. Large-size BaSO4 substrates of 10×6×4 mm3 were grown from a LiCl solvent by the flux method. Flat surfaces of undoped BaSO4 were then achieved by use of liquid-phase epitaxy (LPE) from a CsCl–KCl–NaCl solvent. Finally, BaSO4:Mn6+ layers

  11. Epitaxial growth and optical transitions of cubic GaN films

    Science.gov (United States)

    Schikora, D.; Hankeln, M.; As, D. J.; Lischka, K.; Litz, T.; Waag, A.; Buhrow, T.; Henneberger, F.

    1996-09-01

    Single-phase cubic GaN layers are grown by plasma-assisted molecular-beam epitaxy. The temperature dependence of the surface reconstruction is elaborated. The structural stability of the cubic growth in dependence of the growth stoichiometry is studied by RHEED measurements and numerical simulations of the experimental RHEED patterns. Growth oscillations on cubic GaN are recorded at higher substrate temperatures and nearly stoichiometric adatom coverage. Photoluminescence reveals the dominant optical transitions of cubic GaN and, by applying an external magnetic field, their characteristic g factors are determined.

  12. Step driven competitive epitaxial and self-limited growth of graphene on copper surface

    Directory of Open Access Journals (Sweden)

    Lili Fan

    2011-09-01

    Full Text Available The existence of surface steps was found to have significant function and influence on the growth of graphene on copper via chemical vapor deposition. The two typical growth modes involved were found to be influenced by the step morphologies on copper surface, which led to our proposed step driven competitive growth mechanism. We also discovered a protective role of graphene in preserving steps on copper surface. Our results showed that wide and high steps promoted epitaxial growth and yielded multilayer graphene domains with regular shape, while dense and low steps favored self-limited growth and led to large-area monolayer graphene films. We have demonstrated that controllable growth of graphene domains of specific shape and large-area continuous graphene films are feasible.

  13. Epitaxial Growth of Hard Ferrimagnetic Mn3Ge Film on Rhodium Buffer Layer

    Directory of Open Access Journals (Sweden)

    Atsushi Sugihara

    2015-06-01

    Full Text Available Mn\\(_3\\Ge has a tetragonal Heusler-like D0\\(_{22}\\ crystal structure, exhibiting a large uniaxial magnetic anisotropy and small saturation magnetization due to its ferrimagnetic spin structure; thus, it is a hard ferrimagnet. In this report, epitaxial growth of a Mn\\(_3\\Ge film on a Rh buffer layer was investigated for comparison with that of a film on a Cr buffer layer in terms of the lattice mismatch between Mn\\(_3\\Ge and the buffer layer. The film grown on Rh had much better crystalline quality than that grown on Cr, which can be attributed to the small lattice mismatch. Epitaxial films of Mn\\(_3\\Ge on Rh show somewhat small coercivity (\\(H_{\\rm c}\\ = 12.6 kOe and a large perpendicular magnetic anisotropy (\\(K_{\\rm u}\\ = 11.6 Merg/cm\\(^3\\, comparable to that of the film grown on Cr.

  14. Epitaxial growth of aligned AlGalnN nanowires by metal-organic chemical vapor deposition

    Science.gov (United States)

    Han, Jung; Su, Jie

    2008-08-05

    Highly ordered and aligned epitaxy of III-Nitride nanowires is demonstrated in this work. M-axis is identified as a preferential nanowire growth direction through a detailed study of GaN/AlN trunk/branch nanostructures by transmission electron microscopy. Crystallographic selectivity can be used to achieve spatial and orientational control of nanowire growth. Vertically aligned (Al)GaN nanowires are prepared on M-plane AlN substrates. Horizontally ordered nanowires, extending from the M-plane sidewalls of GaN hexagonal mesas or islands demonstrate new opportunities for self-aligned nanowire devices, interconnects, and networks.

  15. Growth of high purity semiconductor epitaxial layers by liquid phase ...

    Indian Academy of Sciences (India)

    Unknown

    at 780°C for 20 h under Pd-diffused hydrogen obtained from a hydrogen gas generator. Growth was done on semi-insulating or n+ GaAs substrates, oriented along the. direction, which were degreased and etched in. 5 H2SO4 + 1 H2O2 + 1 H2O solution, followed by mild etch in 1% Br2 in methanol. Layers up to 8 ...

  16. Assessment of radionuclide vapor-phase transport in unsaturated tuff

    Energy Technology Data Exchange (ETDEWEB)

    Smith, D.M.; Updegraff, C.D.; Bonano, E.J.; Randall, J.D.

    1986-11-01

    This report describes bounding calculations performed to investigate the possibility of radionuclide migration in a vapor phase associated with the emplacement of high-level waste canister in unsaturated tuff formations. Two potential radionuclide transport mechanisms in the vapor phase were examined: aerosol migration and convection/diffusion of volatile species. The former may have significant impact on the release of radionuclides to the accessible environment as the concentration in the aerosols will be equal to that in the ground water. A conservative analysis of air diffusion in a stagnant liquid film indicated that for all expected repository conditions, aerosol formation is not possible. The migration of volatile species was examined both in the vicinity of a waste canister and outside the thermally disturbed zone. Two-dimensional (radial) and three-dimensional (radial-vertical) coupled heat transfer-gas flow-liquid flow simulations were performed using the TOUGH computer code. The gas flow rate relative to the liquid flow rate predicted from the simulations allowed calculations of mobility ratios due to convection which led to the conclusion that, except for the immediate region near the canister, transport in the liquid phase will be dominant for radionuclides heavier than radon. Near the waste canister, iodine transport may also be important in the vapor phase. Bounding calculations for vertical mobility ratios were carried out as a function of saturation. These calculations are conservative and agree well with the two-dimensional simulations. Based on this analysis, it is clear that vapor-phase transport will not be important for radionuclides such as cesium and heavier species. Vapor transport for iodine may play a role in the overall release scenario depending on the particular repository conditions.

  17. Oriented Metallic Nano-Objects on Crystalline Surfaces by Solution Epitaxial Growth.

    Science.gov (United States)

    Liakakos, Nikolaos; Achkar, Charbel; Cormary, Benoit; Harmel, Justine; Warot-Fonrose, Bénédicte; Snoeck, Etienne; Chaudret, Bruno; Respaud, Marc; Soulantica, Katerina; Blon, Thomas

    2015-10-27

    Chemical methods offer the possibility to synthesize a large panel of nanostructures of various materials with promising properties. One of the main limitations to a mass market development of nanostructure based devices is the integration at a moderate cost of nano-objects into smart architectures. Here we develop a general approach by adapting the seed-mediated solution phase synthesis of nanocrystals in order to directly grow them on crystalline thin films. Using a Co precursor, single-crystalline Co nanowires are directly grown on metallic films and present different spatial orientations depending on the crystalline symmetry of the film used as a 2D seed for Co nucleation. Using films exposing 6-fold symmetry surfaces such as Pt(111), Au(111), and Co(0001), the Co heterogeneous nucleation and epitaxial growth leads to vertical nanowires self-organized in dense and large scale arrays. On the other hand, using films presenting 4-fold symmetry surfaces such as Pt(001) and Cu(001), the Co growth leads to slanted wires in discrete directions. The generality of the concept is demonstrated with the use of a Fe precursor which results in Fe nanostructures on metallic films with different growth orientations which depend on the 6-fold/4-fold symmetry of the film. This approach of solution epitaxial growth combines the advantages of chemistry in solution in producing shape-controlled and monodisperse metallic nanocrystals, and of seeded growth on an ad hoc metallic film that efficiently controls orientation through epitaxy. It opens attractive opportunities for the integration of nanocrystals in planar devices.

  18. Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

    Science.gov (United States)

    Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

    2013-09-24

    The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

  19. Growth mode of tensile-strained Ge quantum dots grown by molecular beam epitaxy

    Science.gov (United States)

    Zhang, Z. P.; Song, Y. X.; Chen, Q. M.; Wu, X. Y.; Zhu, Z. Y. S.; Zhang, L. Y.; Li, Y. Y.; Wang, S. M.

    2017-11-01

    Growth mode of tensile-strained Ge quantum dots on different III–V buffers by molecular beam epitaxy is studied by a combination of reflection high-energy electron diffraction, atomic force microscopy and transmission electron microscopy. The Ge-QDs growth on the InAlAs buffer lattice matched to InP and on InAs buffer on GaSb follows the Volmer–Weber growth mode with round Ge QDs and no Ge wetting layer, while it obeys the Stranski–Krastanov growth mode on GaSb, AlSb and AlGaSb on GaSb substrates, showing rectangular shaped platelets and a clear Ge wetting layer. The discovery of the Volmer–Weber growth mode is essential to avoid forming a wetting layer and the subsequent antiphase-domain defects when capping III–Vs on Ge-QDs, important for potential optoelectronic applications.

  20. Effects of the surface stoichiometry of seeds on GaN layer growth by hydride vapour phase epitaxy.

    Science.gov (United States)

    Wang, B; Zhao, Z D; Xu, W; Sui, Y P; Yu, G H

    2015-05-07

    The effect of the atmosphere in a reactor prior to hydride vapour phase epitaxy on the surface stoichiometry of both the GaN template and layer growth was studied. The surface stoichiometry of metallic Ga layers was clarified by X-ray photoelectron spectroscopy using templates without NH3 protection. The metallic Ga layer acted as a mask and exerted a significant effect on the subsequent epitaxial layer growth mode. GaN grown on the template without protection followed island growth in the initial growth stage. In contrast, GaN epitaxy on the template with NH3 protection quickly converts to pseudo-2D growth. The images of CL illustrate that the GaN epilayer on the template without protection has a lower dislocation density than the GaN epilayer grown on the template with NH3 protection. Reasons behind this effect have been discussed.

  1. Investigations into molecular beam epitaxial growth of Indium Arsenide/Gallium antimonide superlattices

    Science.gov (United States)

    Murray, Lee Michael

    InAs/GaSb superlattices are a material system well suited to growth via molecular beam epitaxy. The ability to tune the band gap over the entire mid and long wave infrared spectrum gives a large number of applications for devices made from InAs/GaSb superlattice material. The growth of high quality InAs/GaSb superlattice material requires a careful study of the parameters used during epitaxial growth. This work investigates the growth of tunnel junctions for InAs/GaSb based superlattice light emitting diodes, the presence of defects in GaSb homoepitaxial layers, and variations in the growth rate of InAs/GaSb superlattice samples. Tunnel junctions in cascaded structures must provide adequate barriers to prevent carriers from leaking from one emission region to the next without first recombining radiatively, while at the same time remain low in tunneling resistance for current recycling. A variety of tunnel junction designs are compared in otherwise identical four stage InAs/GaSb superlattice light emitting diodes, which past studies have found hole confinement to be problematic. GaSb was used on the p-side of the junction, while various materials were used on the n-side. Al0.20In0.80As0.73Sb0.27 tunnel junctions function best due to the combination of favorable band alignment and ease of growth. Pyramidal defects have been observed in layers of GaSb grown by molecular beam epitaxy on GaSb substrates. These defects are typically 3-8 nanometers high, 1-3 microns in diameter, and shaped like pyramids. Their occurrence in the growth of GaSb buffer layers can propagate into subsequent layers. Defects are nucleated during the early stages of growth after the thermal desorption of native oxide from the GaSb substrate. These defects grow into pyramids due to a repulsive Ehrlich-Schwoebel potential on atomic step edges leading to an upward adatom current. The defects reduce in density with growth of GaSb. The insertion of a thin AlAsSb layer into the early stages of the Ga

  2. InAs quantum dot growth on Al{sub x}Ga{sub 1−x}As by metalorganic vapor phase epitaxy for intermediate band solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Jakomin, R., E-mail: robertojakomin@xerem.ufrj.br [Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Campus de Xerém, Universidade Federal do Rio de Janeiro, UFRJ, Duque de Caxias-RJ (Brazil); Kawabata, R. M. S.; Souza, P. L. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Pontificia Universidade Católica do Rio de Janeiro, Marques de São Vicente 225, Rio de Janeiro, 22452-900 RJ (Brazil); Mourão, R. T.; Pires, M. P. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Micha, D. N. [Instituto Nacional de Ciência e Tecnologia de Nanodispositivos Semicondutoires–DISSE–PUC-Rio, RJ (Brazil); Instituto de Física, Universidade Federal do Rio de Janeiro, UFRJ, Rio de Janeiro-RJ (Brazil); Coordenação de Licenciatura em Física, CEFET/RJ, Petrópolis-RJ (Brazil); Xie, H.; Fischer, A. M.; Ponce, F. A. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States)

    2014-09-07

    InAs quantum dot multilayers have been grown using Al{sub x}Ga{sub 1−x}As spacers with dimensions and compositions near the theoretical values for optimized efficiencies in intermediate band photovoltaic cells. Using an aluminium composition of x = 0.3 and InAs dot vertical dimensions of 5 nm, transitions to an intermediate band with energy close to the ideal theoretical value have been obtained. Optimum size uniformity and density have been achieved by capping the quantum dots with GaAs following the indium-flush method. This approach has also resulted in minimization of crystalline defects in the epilayer structure.

  3. Hybrid molecular beam epitaxy for the growth of stoichiometric BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Abhinav, E-mail: praka019@umn.edu; Dewey, John; Yun, Hwanhui; Jeong, Jong Seok; Mkhoyan, K. Andre; Jalan, Bharat, E-mail: bjalan@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2015-11-15

    Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layer growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.

  4. An ultra-compact, high-throughput molecular beam epitaxy growth system

    Energy Technology Data Exchange (ETDEWEB)

    Baker, A. A.; Hesjedal, T. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Diamond Light Source, Didcot OX11 0DE (United Kingdom); Braun, W., E-mail: w.braun@fkf.mpg.de, E-mail: fischer@createc.de; Rembold, S.; Fischer, A., E-mail: w.braun@fkf.mpg.de, E-mail: fischer@createc.de [CreaTec Fischer and Co. GmbH, Industriestr. 9, 74391 Erligheim (Germany); Gassler, G. [Dr. Gassler Electron Devices GmbH, List Str. 4, 89079 Ulm (Germany)

    2015-04-15

    We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined with ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)

  5. Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, Benedikt; Rudolph, Andreas; Soda, Marcello; Zweck, Josef; Schuh, Dieter; Reiger, Elisabeth [Institute for Experimental and Applied Physics, University of Regensburg, D-93053 Regensburg (Germany); Fontcuberta i Morral, Anna, E-mail: elisabeth.reiger@physik.uni-regensburg.de [Laboratoire des Materiaux Semiconducteurs, Institut des Materiaux, Ecole polytechnique federale de Lausanne, CH-1015 Lausanne (Switzerland)

    2010-10-29

    GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO{sub 2} layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 nm and 2 {mu}m. Gallium droplets form preferentially at the etched holes acting as catalyst for the nanowire growth. The nanowires have hexagonal cross-sections with {l_brace}110{r_brace} side facets and crystallize predominantly in zincblende. The interdistance dependence of the nanowire growth rate indicates a change of the III/V ratio towards As-rich conditions for large hole distances inhibiting NW growth.

  6. Epitaxial insertion of gold silicide nanodisks during the growth of silicon nanowires.

    Science.gov (United States)

    Um, Han-Don; Jee, Sang-Won; Park, Kwang-Tae; Jung, Jin-Young; Guo, Zhongyi; Lee, Jung-Ho

    2011-07-01

    Nanodisk-shaped, single-crystal gold silicide heterojunctions were inserted into silicon nanowires during vapor-liquid-solid growth using Au as a catalyst within a specific range of chlorine-to-hydrogen atomic ratio. The mechanism of nanodisk formation has been investigated by changing the source gas ratio of SiCl4 to H2. We report that an over-supply of silicon into the Au-Si liquid alloy leads to highly supersaturated solution and enhances the precipitation of Au in the silicon nanowires due to the formation of unstable phases within the liquid alloy. It is shown that the gold precipitates embedded in the silicon nanowires consisted of a metastable gold silicide. Interestingly, faceting of gold silicide was observed at the Au/Si interfaces, and silicon nanowires were epitaxially grown on the top of the nanodisk by vapor-liquid-solid growth. High resolution transmission electron microscopy confirmed that gold silicide nanodisks are epitaxially connected to the silicon nanowires in the direction of growth direction. These gold silicide nanodisks would be useful as nanosized electrical junctions for future applications in nanowire interconnections.

  7. Epitaxial Growth of Aligned and Continuous Carbon Nanofibers from Carbon Nanotubes.

    Science.gov (United States)

    Lin, Xiaoyang; Zhao, Wei; Zhou, Wenbin; Liu, Peng; Luo, Shu; Wei, Haoming; Yang, Guangzhi; Yang, Junhe; Cui, Jie; Yu, Richeng; Zhang, Lina; Wang, Jiaping; Li, Qunqing; Zhou, Weiya; Zhao, Weisheng; Fan, Shoushan; Jiang, Kaili

    2017-02-28

    Exploiting the superior properties of nanomaterials at macroscopic scale is a key issue of nanoscience. Different from the integration strategy, "additive synthesis" of macroscopic structures from nanomaterial templates may be a promising choice. In this paper, we report the epitaxial growth of aligned, continuous, and catalyst-free carbon nanofiber thin films from carbon nanotube films. The fabrication process includes thickening of continuous carbon nanotube films by gas-phase pyrolytic carbon deposition and further graphitization of the carbon layer by high-temperature treatment. As-fabricated nanofibers in the film have an "annual ring" cross-section, with a carbon nanotube core and a graphitic periphery, indicating the templated growth mechanism. The absence of a distinct interface between the carbon nanotube template and the graphitic periphery further implies the epitaxial growth mechanism of the fiber. The mechanically robust thin film with tunable fiber diameters from tens of nanometers to several micrometers possesses low density, high electrical conductivity, and high thermal conductivity. Further extension of this fabrication method to enhance carbon nanotube yarns is also demonstrated, resulting in yarns with ∼4-fold increased tensile strength and ∼10-fold increased Young's modulus. The aligned and continuous features of the films together with their outstanding physical and chemical properties would certainly promote the large-scale applications of carbon nanofibers.

  8. Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Aheli Ghosh

    2017-09-01

    Full Text Available The growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated ∼0.10% tensile-strained Ge epilayer, owing to the thermal expansion coefficient mismatch between Ge and Si, and negligible epilayer lattice tilt. Micro-Raman spectroscopic analysis corroborated the strain-state of the Ge thin-film. Cross-sectional transmission electron microscopy revealed the formation of 90  ° Lomer dislocation network at Ge/Si heterointerface, suggesting the rapid and complete relaxation of Ge epilayer during growth. Atomic force micrographs exhibited smooth surface morphology with surface roughness < 2 nm. Temperature dependent Hall mobility measurements and the modelling thereof indicated that ionized impurity scattering limited carrier mobility in Ge layer. Capacitance- and conductance-voltage measurements were performed to determine the effect of epilayer dislocation density on interfacial defect states (Dit and their energy distribution. Finally, extracted Dit values were benchmarked against published Dit data for Ge MOS devices, as a function of threading dislocation density within the Ge layer. The results obtained were comparable with Ge MOS devices integrated on Si via alternative buffer schemes. This comprehensive study of directly-grown epitaxial Ge-on-Si provides a pathway for the development of Ge-based electronic devices on Si.

  9. Growth, structural, and electrical properties of germanium-on-silicon heterostructure by molecular beam epitaxy

    Science.gov (United States)

    Ghosh, Aheli; Clavel, Michael B.; Nguyen, Peter D.; Meeker, Michael A.; Khodaparast, Giti A.; Bodnar, Robert J.; Hudait, Mantu K.

    2017-09-01

    The growth, morphological, and electrical properties of thin-film Ge grown by molecular beam epitaxy on Si using a two-step growth process were investigated. High-resolution x-ray diffraction analysis demonstrated ˜0.10% tensile-strained Ge epilayer, owing to the thermal expansion coefficient mismatch between Ge and Si, and negligible epilayer lattice tilt. Micro-Raman spectroscopic analysis corroborated the strain-state of the Ge thin-film. Cross-sectional transmission electron microscopy revealed the formation of 90° Lomer dislocation network at Ge/Si heterointerface, suggesting the rapid and complete relaxation of Ge epilayer during growth. Atomic force micrographs exhibited smooth surface morphology with surface roughness < 2 nm. Temperature dependent Hall mobility measurements and the modelling thereof indicated that ionized impurity scattering limited carrier mobility in Ge layer. Capacitance- and conductance-voltage measurements were performed to determine the effect of epilayer dislocation density on interfacial defect states (Dit) and their energy distribution. Finally, extracted Dit values were benchmarked against published Dit data for Ge MOS devices, as a function of threading dislocation density within the Ge layer. The results obtained were comparable with Ge MOS devices integrated on Si via alternative buffer schemes. This comprehensive study of directly-grown epitaxial Ge-on-Si provides a pathway for the development of Ge-based electronic devices on Si.

  10. Molecular beam epitaxy growth of InSb1-xBix thin films

    DEFF Research Database (Denmark)

    Yuxin Song; Shumin Wang; Saha Roy, Ivy

    2013-01-01

    Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology...

  11. Solution-phase epitaxial growth of noble metal nanostructures on dispersible single-layer molybdenum disulfide nanosheets.

    Science.gov (United States)

    Huang, Xiao; Zeng, Zhiyuan; Bao, Shuyu; Wang, Mengfei; Qi, Xiaoying; Fan, Zhanxi; Zhang, Hua

    2013-02-05

    Compared with the conventional deposition techniques used for the epitaxial growth of metallic structures on a bulk substrate, wet-chemical synthesis based on the dispersible template offers several advantages, including relatively low cost, high throughput, and the capability to prepare metal nanostructures with controllable size and morphology. Here we demonstrate that the solution-processable two-dimensional MoS(2) nanosheet can be used to direct the epitaxial growth of Pd, Pt and Ag nanostructures at ambient conditions. These nanostructures show the major (111) and (101) orientations on the MoS(2)(001) surface. Importantly, the Pt-MoS(2) hybrid nanomaterials exhibit much higher electrocatalytic activity towards the hydrogen evolution reaction compared with the commercial Pt catalysts with the same Pt loading. We believe that nanosheet-templated epitaxial growth of nanostructures via wet-chemical reaction is a promising strategy towards the facile and high-yield production of novel functional materials.

  12. Epitaxial growth of LiCoO2 thin films with (001) orientation

    Science.gov (United States)

    Okada, Koichi; Ohnishi, Tsuyoshi; Mitsuishi, Kazutaka; Takada, Kazunori

    2017-11-01

    The layered structure of LiCoO2 implies anisotropic ionic conduction; however, experimental data have never demonstrated this. The anisotropy can be observed clearly in epitaxial films with controlled orientations. Our previous study had reported that LiCoO2 grows epitaxially on Nb-doped SrTiO3 (100) and (110) substrates with complete (104) and (018) orientations, respectively. On the other hand, the growth on SrTiO3 (111) substrates with (001) orientation was accompanied by the inclusion of (012)-oriented domains, although the (012) orientation is higher in the energy state than the (001). The present study reveals that lower laser energy density (fluence) and lower substrate temperature decrease the amount of inclusions; that is, the occurrence of the (012) orientation in spite of its higher energy is governed by these factors. Higher fluence leading to higher deposition rates does not provide sufficient time for the cations to be rearranged into the (001) orientation, and the higher substrate temperature increases the nucleation frequency for the (012) orientation. A micrograph of the final (001)-oriented film reveals that the LiCoO2 film grows in an island growth mode.

  13. Solution-Phase Epitaxial Growth of Quasi-Monocrystalline Cuprous Oxide on Metal Nanowires

    Science.gov (United States)

    2014-01-01

    The epitaxial growth of monocrystalline semiconductors on metal nanostructures is interesting from both fundamental and applied perspectives. The realization of nanostructures with excellent interfaces and material properties that also have controlled optical resonances can be very challenging. Here we report the synthesis and characterization of metal–semiconductor core–shell nanowires. We demonstrate a solution-phase route to obtain stable core–shell metal–Cu2O nanowires with outstanding control over the resulting structure, in which the noble metal nanowire is used as the nucleation site for epitaxial growth of quasi-monocrystalline Cu2O shells at room temperature in aqueous solution. We use X-ray and electron diffraction, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence spectroscopy, and absorption spectroscopy, as well as density functional theory calculations, to characterize the core–shell nanowires and verify their structure. Metal–semiconductor core–shell nanowires offer several potential advantages over thin film and traditional nanowire architectures as building blocks for photovoltaics, including efficient carrier collection in radial nanowire junctions and strong optical resonances that can be tuned to maximize absorption. PMID:25233392

  14. Pulsed laser ablation growth and doping of epitaxial compound semiconductor films

    Energy Technology Data Exchange (ETDEWEB)

    Lowndes, D.H.; Rouleau, C.M.; Geohegan, D.B.; Budai, J.D.; Poker, D.B. [Oak Ridge National Lab., TN (United States). Solid State Div.; Puretzky, A.A. [Inst. of Spectroscopy, Troitsk (Russian Federation); Strauss, M.A.; Pedraza, A.J.; Park, J.W. [Univ. of Tennessee, Knoxville, TN (United States)

    1995-12-01

    Pulsed laser ablation (PLA) has several characteristics that are potentially attractive for the growth and doping of chemically complex compound semiconductors including (1) stoichiometric (congruent) transfer of composition from target to film, (2) the use of reactive gases to control film composition and/or doping via energetic-beam-induced reactions, and (3) low-temperature nonequilibrium phase formation in the laser-generated plasma ``plume.`` However, the electrical properties of compound semiconductors are far more sensitive to low concentrations of defects than are the oxide metals/ceramics for which PLA has been so successful. Only recently have doped epitaxial compound semiconductor films been grown by PLA. Fundamental studies are being carried out to relate film electrical and microstructural properties to the energy distribution of ablated species, to the temporal evolution of the ablation pulse in ambient gases, and to beam assisted surface and/or gas-phase reactions. In this paper the authors describe results of ex situ Hall effect, high-resolution x-ray diffraction, transmission electron microscopy, and Rutherford backscattering measurements that are being used in combination with in situ RHEED and time-resolved ion probe measurements to evaluate PLA for growth of doped epitaxial compound semiconductor films and heterostructures. Examples are presented and results analyzed for doped II-VI, I-III-VI, and column-III nitride materials grown recently in this and other laboratories.

  15. Growth of Amorphous and Epitaxial ZnSiP2-Si Alloys on Si

    Energy Technology Data Exchange (ETDEWEB)

    Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Martinez, Aaron [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Link, Elisa M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Norman, Andrew [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schnepf, Rekha [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Perkins, Craig [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Toberer, Eric [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Leick, Noemi [Formerly NREL

    2018-01-03

    ZnSiP2 is a wide band gap material that is lattice matched with Si, offering the potential for Si-based optoelectronic materials and devices, including multijunction photovoltaics. We present a carbon-free chemical vapor deposition process for the growth of both epitaxial and amorphous thin films of ZnSiP2-Si alloys with tunable Si content on Si substrates. Si alloy content is widely tunable across the full composition space in amorphous films. Optical absorption of these films reveals relatively little variation with Si content, despite the fact that ZnSiP2 has a much wider band gap of 2.1 eV. Post-growth crystallization of Si-rich films resulted in epitaxial alignment, as measured by X-ray diffraction and transmission electron microscopy. These films have an optical absorption onset near 1.1 eV, suggesting the possibility of band gap tuning with Si content in crystalline films. The optical absorption is comparably strong to pure ZnSiP2, suggesting a more direct transition than in pure Si.

  16. Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Plaza, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Abuin, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Mascaraque, A., E-mail: arantzazu.mascaraque@fis.ucm.es [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Gonzalez-Barrio, M.A. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Perez, L. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Instituto de Sistemas Optoelectronicos y Microtecnologia, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Electrodeposition of Bi films on GaAs substrates with different orientations. Black-Right-Pointing-Pointer Ultra thin films - 50 nm - are continuous and smooth. Black-Right-Pointing-Pointer Bi always grows with (0 1 L) orientations. Black-Right-Pointing-Pointer Epitaxial growth onto As terminated surfaces. Black-Right-Pointing-Pointer Proposed model based on structural and chemical considerations. - Abstract: We report on the growth of thin bismuth films on GaAs substrates with different orientations by means of electrochemical deposition. Atomic force microscopy reveals that the films are continuous and exhibit low roughness when they are grown under the appropriate overpotential. {omega}-2{theta} X-ray diffraction scans only show reflections that can be indexed as (0 1 L), meaning that Bi grows onto GaAs only in combinations of the (0 0 1) and (0 1 0) orientations. The matching between the GaAs substrate and the Bi layer has been studied by asymmetric X-ray scans, finding that Bi grows epitaxially on GaAs(1 1 0) and GaAs(1 1 1)B, both As-terminated surfaces. We explain these results by structural and chemical considerations.

  17. Solution-phase epitaxial growth of quasi-monocrystalline cuprous oxide on metal nanowires.

    Science.gov (United States)

    Sciacca, Beniamino; Mann, Sander A; Tichelaar, Frans D; Zandbergen, Henny W; van Huis, Marijn A; Garnett, Erik C

    2014-10-08

    The epitaxial growth of monocrystalline semiconductors on metal nanostructures is interesting from both fundamental and applied perspectives. The realization of nanostructures with excellent interfaces and material properties that also have controlled optical resonances can be very challenging. Here we report the synthesis and characterization of metal-semiconductor core-shell nanowires. We demonstrate a solution-phase route to obtain stable core-shell metal-Cu2O nanowires with outstanding control over the resulting structure, in which the noble metal nanowire is used as the nucleation site for epitaxial growth of quasi-monocrystalline Cu2O shells at room temperature in aqueous solution. We use X-ray and electron diffraction, high-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, photoluminescence spectroscopy, and absorption spectroscopy, as well as density functional theory calculations, to characterize the core-shell nanowires and verify their structure. Metal-semiconductor core-shell nanowires offer several potential advantages over thin film and traditional nanowire architectures as building blocks for photovoltaics, including efficient carrier collection in radial nanowire junctions and strong optical resonances that can be tuned to maximize absorption.

  18. Systematic study of molecular beam epitaxy growth and magnetic properties of Fe on Au(111)

    Science.gov (United States)

    Xu, J.; Howson, M. A.; Hucknall, P.; Hickey, B. J.; Venkataraman, R.; Hammond, C.; Walker, M. J.; Greig, D.

    1997-04-01

    We have grown a series of Fe samples on Au(111) by molecular beam epitaxy. Fe was grown on Au at 30 °C and shows clear reflection high energy electron diffraction (RHEED) oscillations up to 8 monolayers, suggesting layer-by-layer growth on Au. A combined study of RHEED, medium energy ion scattering, and x-ray diffraction scans has strongly indicated that Fe initially grew as fcc(111) on Au(111) below the thickness of 3 monolayer and for the subsequent growth the Fe bcc(110) structure begins to form. Magneto-optical Kerr effect measurement has shown that the magnetization easy axis lies in the plane of the film for the thickness range from 3 to 20 Å and there is a perpendicular anisotropy when the thickness of Fe is about one monolayer.

  19. Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

    Science.gov (United States)

    Alberi, Kirstin; Scarpulla, Michael A.

    2018-01-01

    Herein, we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported. Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.

  20. Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes

    Energy Technology Data Exchange (ETDEWEB)

    Alberi, Kirstin; Scarpulla, Michael A.

    2017-11-22

    Herein, we review the remarkable range of modifications to materials properties associated with photoexcitation of the growth surface during physical vapor epitaxy of semiconductors. We concentrate on mechanisms producing measureable, utilizable changes in crystalline perfection, phase, composition, doping, and defect distribution. We outline the relevant physics of different mechanisms, concentrating on those yielding effects orthogonal to the primary growth variables of temperature and atomic or molecular fluxes and document the phenomenological effects reported. Based on experimental observations from a range of semiconductor systems and growth conditions, the primary effects include enhanced anion desorption, molecular dissociation, increased doping efficiency, modification to defect populations and improvements to the crystalline quality of epilayers grown at low temperatures. Future research directions and technological applications are also discussed.

  1. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    Science.gov (United States)

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  2. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-08-31

    We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxyGrowth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

  3. Epitaxial graphene growth and shape dynamics on copper: phase-field modeling and experiments.

    Science.gov (United States)

    Meca, Esteban; Lowengrub, John; Kim, Hokwon; Mattevi, Cecilia; Shenoy, Vivek B

    2013-01-01

    The epitaxial growth of graphene on copper foils is a complex process, influenced by thermodynamic, kinetic, and growth parameters, often leading to diverse island shapes including dendrites, squares, stars, hexagons, butterflies, and lobes. Here, we introduce a phase-field model that provides a unified description of these diverse growth morphologies and compare the model results with new experiments. Our model explicitly accounts for the anisotropies in the energies of growing graphene edges, kinetics of attachment of carbon at the edges, and the crystallinity of the underlying copper substrate (through anisotropy in surface diffusion). We show that anisotropic diffusion has a very important, counterintuitive role in the determination of the shape of islands, and we present a "phase diagram" of growth shapes as a function of growth rate for different copper facets. Our results are shown to be in excellent agreement with growth shapes observed for high symmetry facets such as (111) and (001) as well as for high-index surfaces such as (221) and (310).

  4. Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

    Directory of Open Access Journals (Sweden)

    Tetiana Slusar

    2016-02-01

    Full Text Available We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT of vanadium dioxide (VO2 thin films synthesized on aluminum nitride (AlN/Si (111 substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010 ‖ AlN (0001 with VO2 [101] ‖   AlN   [ 2 1 ̄ 1 ̄ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ∼130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.

  5. In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

    Science.gov (United States)

    Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

    2016-05-01

    Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon

  6. Liquid Phase Epitaxial Growth of Al-doped f-SiC for White Light-Emitting Diodes

    DEFF Research Database (Denmark)

    Tang, Kai; Ma, Xiang; can der Eijk, Casper

    efficiency, better light quality and longer lifespan, compared to the current yellow phosphor based white LEDs.Liquid phase epitaxy technology can yield a high crystalline quality in terms of structural perfection owing to the fact that it is a near equilibrium crystalline growth process. In addition...

  7. Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

    Science.gov (United States)

    Wei, Hongling; Chen, Zhengwei; Wu, Zhenping; Cui, Wei; Huang, Yuanqi; Tang, Weihua

    2017-11-01

    Ga2O3 with a wide bandgap of ˜ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE) at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It's also demonstrated that the CuGa2O4 film has a bandgap of ˜ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

  8. Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Hongling Wei

    2017-11-01

    Full Text Available Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this work, CuGa2O4 bulk were prepared by solid state reaction as target, and the films were deposited on sapphire substrates by laser molecular beam epitaxy (L-MBE at different substrate temperatures. The influences of substrate temperature on structural and optical properties have been systematically investigated by means of X-ray diffraction, Transmission electron microscope and UV-vis absorption spectra. High quality cubic structure and [111] oriented CuGa2O4 film can be obtained at substrate temperature of 750 °C. It’s also demonstrated that the CuGa2O4 film has a bandgap of ∼ 4.4 eV and a best crystal quality at 750 °C, suggesting that CuGa2O4 film is a promising candidate for applications in ultraviolet optoelectronic devices.

  9. Growth of N-polar GaN by ammonia molecular beam epitaxy

    Science.gov (United States)

    Fireman, M. N.; Li, Haoran; Keller, Stacia; Mishra, Umesh K.; Speck, James S.

    2018-01-01

    The homoepitaxial growth of N-polar GaN was investigated by ammonia molecular beam epitaxy. Systematic growth studies varying the V/III flux ratio and the growth temperature indicated that the strongest factor in realizing morphologically smooth films was the growth temperature; N-face films needed to be grown approximately 100 °C or greater than Ga-face films provided the same metal flux. Smooth N-face films could also be grown at temperatures only 50 °C greater than Ga-face films, albeit under reduced metal flux. Too high a growth temperature and too low a metal flux resulted in dislocation mediated pitting of the surface. The unintentional impurity incorporation of such films was also studied by secondary mass ion spectroscopy and most importantly revealed an oxygen content in the mid 1017 to the mid 1018 cm-3 range. Hall measurements confirmed that this oxygen impurity resulted in n-type films, with carrier concentrations and mobilities comparable to those of intentionally silicon doped GaN.

  10. Field demonstration of vapor phase TCE bioreactor. Final report

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-14

    The objective of this Cooperative Research and Development Agreement (CRADA), was to demonstrate the effectiveness of a vapor-phase bioreactor system for the destruction of trichloroethylene (TCE) from contaminated groundwater. A field demonstration was per-formed using groundwater at the Oak Ridge K-25 Site contaminated with a complex mixture of organic chemicals. This site is managed and operated by Martin Marietta Energy Systems, Inc. for the Department of Energy (DOE). Analysis of the data generated during the test can be summarized in three major observations. First, TCE was degraded in the presence of all the organics found in the steam strip condensate. This was observed during treatment of both the steam strip condensate and condensate amended with TCE to increase its concentration relative to the other components. The conclusion that TCE was being biodegraded was supported by performing mass balance control experiments with the reactor and by tracking recalcitrant chemicals also present in the steam stripper condensate. Second, there appeared to be an initial lag period of up to 24 hours before onset of TCE degradation in the reactor. The source of this lag was not determined but could be related to either an acclimation of the microorganisms to other chemicals found in the condensate or reversible inhibitory effects on TCE degradation. The duration of TCE degradative activity was relatively short for only 2 to 5 days. compared to previous demonstrations where TCE was the sole contaminant. However, several of the runs were interrupted due to mechanical and not biological issues. Third, other chemical contaminants were also degraded. by the bacteria used in the vapor phase reactor which is consistent with previous work performed both at ENVIROGEN and elsewhere.

  11. Homo-epitaxial diamond film growth on ion implanted diamond substrates

    Energy Technology Data Exchange (ETDEWEB)

    Weiser, P.S.; Prawer, S.; Nugent, K.W.; Bettiol, A.A.; Kostidis, L.I.; Jamieson, D.N. [Melbourne Univ., Parkville, VIC (Australia). School of Physics

    1996-12-31

    The nucleation of CVD diamond is a complicated process, governed by many interrelated parameters. In the present work we attempt to elucidate the effect of strain on the growth of a homo-epitaxial CVD diamond. We have employed laterally confined high dose (MeV) Helium ion implantation to produce surface swelling of the substrate. The strain is enhanced by the lateral confinement of the implanted region to squares of 100 x 100 {mu}m{sup 2}. After ion implantation, micro-Raman spectroscopy was employed to map the surface strain. The substrates were then inserted into a CVD reactor and a CVD diamond film was grown upon them. Since the strained regions were laterally confined, it was then possible to monitor the effect of strain on diamond nucleation. The substrates were also analysed using Rutherford Backscattering Spectroscopy (RBS), Proton induced X-ray Emission (PIXE) and Ion Beam induced Luminescence (IBIL). 7 refs., 5 figs.

  12. Tuning magnetic response of epitaxial iron-silicide nanoislands by controlled self-assembled growth

    Science.gov (United States)

    Goldfarb, I.; Camus, Y.; Dascalu, M.; Cesura, F.; Chalasani, R.; Kohn, A.

    2017-07-01

    We investigated the dependence of the magnetic response from epitaxial Si-rich iron-silicide nanostructures on their geometry. By varying substrate orientation and deposition parameters, we altered the growth kinetics and the lattice matching conditions at the silicide/silicon interface. These affected the silicide nanoisland crystal structure, size, shape, and proximity due to spatial ordering and, consequently, their magnetic response in terms of shape and opening of the respective hysteresis loops. In particular, we demonstrated correlation between magnetic anisotropy, expressed as the hysteresis coercive field, and the nanoisland spatial length-to-width aspect ratio. This correlation is explained by the contribution of undercoordinated island edge atoms to the overall measured magnetic behavior of the nanoisland arrays. Further, the island self-ordering along periodic surface steps adds dipolar interactions between the otherwise superparamagnetic nanoislands, consequently resulting in a magnetic response resembling that of a superspin glass.

  13. Support-Promoted Stabilization of the Metastable PZT Pyrochlore Phase by Epitaxial Thin Film Growth

    Science.gov (United States)

    Hamedi, L'H.; Guilloux-Viry, M.; Perrin, A.; Li, Z. Z.; Raffy, H.

    2001-04-01

    Thin films of lead zirconium titanium oxide with the Zr/Ti ratio close to 52/48 have been grown by pulsed laser deposition on epitaxial (100)CeO2 buffered R-plane sapphire substrates. Instead of the expected perovskite structure, these films are pure cubic metastable pyrochlore phase. From X-ray diffraction in θ-2θ mode and θ-scans it appears than the films are fully {100} oriented with a mosaicity in the range 0.8°-0.9°. In-plane characterizations, including RHEED photographs, electron-channeling patterns, XRD ϕ-scans, and near grazing incidence XRD, are indicative of high-quality epitaxial growth, cube-on-cube, on the CeO2 sublayer. RBS analyses show that increasing the deposition temperature in the range 560-650°C does not affect the Zr/Ti ratio, while the lead content drops significantly from Pb/(Zr+Ti)=0.7 to 0.3 (a stoichiometry close to the composition of "Pb(Zr0.52Ti0.48)3O7"); simultaneously, the unit-cell constant decreases monotically from 10.40 to 10.15 Å. A comparison with results obtained on a variety of other substrates suggests that the driving force that imposes the growth of the pyrochlore phase at the expense of the perovskite-like one is not related to the misfit, but to the nature of the interface at the atomic scale, due to the close structural relations between fluorite and pyrochlore. This hypothesis is confirmed by the obtention of the usual perovskite variant when a (111)CeO2 sublayer is used.

  14. Crystallography and Growth of Epitaxial Oxide Films for Fundamental Studies of Cathode Materials Used in Advanced Li-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Leonid A. Bendersky

    2017-05-01

    Full Text Available Li-ion battery systems, synthesized as epitaxial thin films, can provide powerful insights into their electrochemical processes. Crystallographic analysis shows that many important cathode oxides have an underlying similarity: their structures can be considered as different ordering schemes of Li and transition metal ions within a pseudo-cubic sublattice of oxygen anions arranged in a face-center cubic (FCC fashion. This oxygen sublattice is compatible with SrTiO3 and similar perovskite oxides, thus perovskites can be used as supporting substrates for growing epitaxial cathode films. The predicted epitaxial growth and crystallographic relations were experimentally verified for different oxide films deposited by pulsed laser deposition (PLD on SrTiO3 or SrRuO3/SrTiO3 of different orientations. The results based on cross-sectional high-resolution TEM of the following films are presented in the paper: (a trigonal LiCoO2; (b orthorhombic LiMnO2; (c monoclinic Li2MnO3; (d compositionally-complex monoclinic Li1.2Mn0.55Ni0.15Co0.1O2. All results demonstrated the feasibility of epitaxial growth for these materials, with the growth following the predicted cube-on-cube orientation relationship between the cubic and pseudo-cubic oxygen sublattices of a substrate and a film, respectively.

  15. Scaling analysis of self-assembled structures and related morphological information in epitaxial growth

    Science.gov (United States)

    Blel, Sonia; Hamouda, Ajmi B. H.; Mahjoub, Brahim; Hoggan, Philip; Oujia, Brahim

    2017-02-01

    Using kinetic Monte-Carlo simulations, we have performed a qualitative and quantitative study of the homo-epitaxial growth for two materials Cu and Ag. Based on their dynamic scaling properties, a relationship between the resultant growth morphology and its computed scaling exponents is found to play a key role in the surface self-assembled at long time (hundreds of monolayer) and also at early time (sub-monolayer regime) of growth. Then, the effect of next-nearest-neighbor (NNN) interactions on the scaling exponents, as well as the surface morphology, is discussed. NNN interactions are found to affect the scaling exponents in the case of Cu rather than Ag. We also show that the higher the local roughness, the best 1-D nanostructures are obtained; which is confirmed by the measurement of filling rate of nanowires at step-edge on vicinal surfaces. Our results were compared to the available experimental and theoretical results and seem advantageous for a better understanding of the growth dynamics.

  16. Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD

    Science.gov (United States)

    Alema, Fikadu; Hertog, Brian; Osinsky, Andrei; Mukhopadhyay, Partha; Toporkov, Mykyta; Schoenfeld, Winston V.

    2017-10-01

    We report on the growth of epitaxial β-Ga2O3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor. Ga(DPM)3 (DPM = dipivaloylmethanate), triethylgallium (TEGa) and trimethylgallium (TMGa) metal organic (MO) precursors were used as Ga sources and molecular oxygen was used for oxidation. Films grown from each of the Ga sources had high growth rates, with up to 10 μm/hr achieved using a TMGa precursor at a substrate temperature of 900 °C. As confirmed by X-ray diffraction, the films grown from each of the Ga sources were the monoclinic (2 bar 0 1) oriented β-Ga2O3 phase. The optical bandgap of the films was also estimated to be ∼4.9 eV. The fast growth rate of β-Ga2O3 thin films obtained using various Ga-precursors has been achieved due to the close couple showerhead design of the MOCVD reactor as well as the separate injection of oxygen and MO precursors, preventing the premature oxidation of the MO sources. These results suggest a pathway to overcoming the long-standing challenge of realizing fast growth rates for Ga2O3 using the MOCVD method.

  17. Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate

    Energy Technology Data Exchange (ETDEWEB)

    Moetakef, Pouya; Zhang, Jack Y.; Raghavan, Santosh; Kajdos, Adam P.; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California, 93106-5050 (United States)

    2013-07-15

    The conditions for the growth of stoichiometric GdTiO{sub 3} thin films by molecular beam epitaxy (MBE) are investigated. It is shown that relatively high growth temperatures (>750 Degree-Sign C) are required to obtain an MBE growth window in which only the stoichiometric film grows for a range of cation flux ratios. This growth window narrows with increasing film thickness. It is also shown that single-domain films are obtained by the growth on a symmetry-matched substrate. The influence of lattice mismatch strain on the electrical and magnetic characteristics of the GdTiO{sub 3} thin film is investigated.

  18. Epitaxial growth and properties of zinc oxide thin films on silicon substrates

    Science.gov (United States)

    Guo, Wei

    ZnO is an attractive material for promising applications in short wavelength optoelectronic devices because of its wide band gap and large exciton binding energy at room temperature (RT). This dissertation is devoted to the development of high quality, single-crystalline ZnO-based light-emitting devices on Si substrates, involving thin film synthesis by pulsed laser deposition, structure-property characterization, prototype device fabrication, strain engineering of thick films, and p-type doping with antimony (Sb). ZnO epitaxy with exceptional quality was achieved on (111) Si substrates for the advantages of inexpensive large wafers, mature device technologies, and multifunctional device integration. Epitaxial bixbyite oxides M2O3 (M=Sc, Lu, Gd) were originally employed as the buffer layer between ZnO and Si. The single-crystalline ZnO films has superior structural, electrical, and optical qualities than all previous reports of ZnO on Si, such as narrow o-rocking curves, low dislocation densities, high electron mobilities at RT, and comparable photoluminescence characteristics to those of ZnO single crystal. The epitaxial orientation relationship, intrinsic donors, microstructural defects, and residual strain of the films were investigated. Prototype n-ZnO/ M2O3/p-Si devices were constructed, and ZnO near-band-edge emission was observed in electroluminescence at RT. Strain engineering of thick films by insertion of low-temperature grown ZnO interlayers was performed to improve the cracking critical thickness to ≥2 mum. Reliable ZnO p-type doping using large-size-mismatched Sb dopant was achieved for the films grown on both (0001) Al2O 3 and (100) Si substrates, with a resistivity of 4.2-60 O cm, a Hall mobility of 0.5-7.7 cm2/V s, and a hole concentration of 3.2x1016-2.2x1017 cm-3 . The origin of p-type conductivity was elucidated from conjugated effects of oxygen-rich growth condition, adequate doping concentration, and dislocation-facilitated formation of

  19. Metal-Organic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials

    Science.gov (United States)

    2015-04-09

    researchers from First Solar in depositing single crystal solar cell materials . A research contract worth over $150K was awarded to RPI b First Solar based on...free contact layers in solar cells . As part of another project funded by Arizona State University/DOE, subcontract from Bay Area Photovoltaic ...II-VI semiconductor layers to further improve the performance of Si solar cells with comparable thickness to HIT structures. We use the installed

  20. Pyrolysis of diisopropylantimony hydride: A new precursor for organometallic vapor phase epitaxy

    Science.gov (United States)

    Hill, C. W.; Tao, M.; Gedridge, R. W.; Stringfellow, G. B.

    1994-05-01

    The pyrolysis of diisopropylantimony hydride (DIPSbH), (C3H7)2SbH, has been studied in an isothermal flow-tube reactor. The reaction products in H2, D2, and He carrier gases were studied using a time-of-flight mass spectrometer. T50 for this compound (200‡C) is significantly lower than that of other antimony sources, such as trimethylantimony (450‡C). In addition to the hydride, the decomposition of diisopropylantimony deuteride (DIPSbD), (C3H7)2SbD, was studied to provide insight into the pyrolysis mechanism. The rate limiting step was found to be first-order and is believed to be a reductive elimination reaction which produces C3H8 in the case of DIPSbH and C3H7D in the case of DIPSbD. An increase in the ratio of [C3H6] to [C3H8] was observed as the temperature was increased from 200 to 275‡C, indicating that other reactions, possibly Β-hydrogen elimination, are important as well. The reaction rate and the products produced were not affected by changing the carrier gas. The temperature dependence of the vapor pressure was determined and is described by the equation log (P)(Torr) = 7.948-2100/T(l/K).

  1. Numerical modeling study on the epitaxial growth of silicon from dichlorosilane

    Science.gov (United States)

    Zaidi, Imama; Jang, Yeon-Ho; Ko, Dong Guk; Im, Ik-Tae

    2018-02-01

    Computer simulations play an important role in determining the optimal design parameters for chemical vapor deposition (CVD) reactors, such as flow rates, positions of the inlet and outlet orifices, and rotational rates, etc. Reliability of the results of these simulations depends on the set of chemical reaction used to represent the process of deposition in the reactor. Aim of the present work is to validate the simple empirical reaction to model the epitaxial growth of silicon for a Dichlorosilane-H2 (DCS)-H2 system. Governing equations for continuity, momentum, energy, and reacting species are solved numerically using the finite volume method. The agreement between experimental and predicted growth rates for various DCS flow rates is shown to be satisfactory. The increase in growth rate with the increase in pressure is in accordance with the available data. Based on the validated chemical reaction model, a study was carried out to analyze the uniformity of the silicon layer thickness for two different flow rates in a planetary reactor. It was concluded that, based on the operating conditions, the uniformity of the silicon layer over the wafer is independent of the satellite rotational rate in the reactor.

  2. Oxygen-dependent epitaxial growth of Pt(001) thin films on MgO(001) by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, X.Y., E-mail: qxy2001@swu.edu.cn [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Wang, R.X.; Li, G.Q.; Zhang, T.; Li, L.T.; Wei, M.L.; Meng, X.S. [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Ji, H. [School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, Sichuan (China); Zhang, Z.; Chan, C.H.; Dai, J.Y. [Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong (China)

    2017-06-01

    Highlights: • The optimized oxygen ratio for high-quality epitaxial Pt (001) thin films is 15%. • Platinum oxides is formed after the oxygen ratio is more than 30%. • Epitaxial growth of Pt on MgO(001) is cube to cube with Pt(001)//MgO(001). - Abstract: The roles of oxygen gas in crystal orientation, surface morphology and electrical resistivity of Pt thin films grown on MgO(001) substrate by magnetron sputtering are studied. With a well-controlled oxygen ratio (15% oxygen) during sputtering deposition with Ar-O{sub 2} mixture ambient, (001) epitaxial growth of Pt film on MgO substrate is achieved with an epitaxial orientation relationship of (001)Pt//(001)MgO and [100]Pt//[100]MgO. Microstructural and electrical characterizations reveal that the (001) Pt thin films possess very smooth surface and good conductivity. The formation and subsequent decomposition of platinum oxides in the Pt films grown with more than 30% oxygen result in an increase of surface roughness and electrical resistivity. The high-quality Pt(001) film has large potential for integrated electronic device applications.

  3. Vapor phase elemental sulfur amendment for sequestering mercury in contaminated soil

    Science.gov (United States)

    Looney, Brian B.; Denham, Miles E.; Jackson, Dennis G.

    2014-07-08

    The process of treating elemental mercury within the soil is provided by introducing into the soil a heated vapor phase of elemental sulfur. As the vapor phase of elemental sulfur cools, sulfur is precipitated within the soil and then reacts with any elemental mercury thereby producing a reaction product that is less hazardous than elemental mercury.

  4. In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi2 in nanowires of Si.

    Science.gov (United States)

    Chou, Yi-Chia; Wu, Wen-Wei; Cheng, Shao-Liang; Yoo, Bong-Young; Myung, Nosang; Chen, Lih J; Tu, K N

    2008-08-01

    The formation of CoSi and CoSi2 in Si nanowires at 700 and 800 degrees C, respectively, by point contact reactions between nanodots of Co and nanowires of Si have been investigated in situ in a ultrahigh vacuum high-resolution transmission electron microscope. The CoSi2 has undergone an axial epitaxial growth in the Si nanowire and a stepwise growth mode was found. We observed that the stepwise growth occurs repeatedly in the form of an atomic step sweeping across the CoSi2/Si interface. It appears that the growth of a new step or a new silicide layer requires an independent event of nucleation. We are able to resolve the nucleation stage and the growth stage of each layer of the epitaxial growth in video images. In the nucleation stage, the incubation period is measured, which is much longer than the period needed to grow the layer across the silicide/Si interface. So the epitaxial growth consists of a repeating nucleation and a rapid stepwise growth across the epitaxial interface. This is a general behavior of epitaxial growth in nanowires. The axial heterostructure of CoSi2/Si/CoSi2 with sharp epitaxial interfaces has been obtained. A discussion of the kinetics of supply limited and source-limited reaction in nanowire case by point contact reaction is given. The heterostructures are promising as high performance transistors based on intrinsic Si nanowires.

  5. Optical properties and structural investigations of (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rosales, Daniel; Gil, Bernard; Bretagnon, Thierry [CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Université de Montpellier, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Brault, Julien; Vennéguès, Philippe; Nemoz, Maud; Mierry, Philippe de; Damilano, Benjamin; Massies, Jean [CNRS Centre de Recherche sur l' Hétéro-Epitaxie et ses Applications, 06560 Valbonne (France); Bigenwald, Pierre [Institut Pascal, Campus des Cézeaux, 24 avenue des Landais, 63171 Aubière Cedex (France)

    2015-07-14

    We have grown (11-22)-oriented GaN/Al{sub 0.5}Ga{sub 0.5}N quantum wells (QWs) using molecular beam epitaxy on GaN (11-22)-oriented templates grown by metal-organic vapor phase epitaxy on m-plane oriented sapphire substrates. The performance of epitaxial growth of GaN/Al{sub 0.5}Ga{sub 0.5}N heterostructures on the semi-polar orientation (11-22) in terms of surface roughness and structural properties, i.e., strain relaxation mechanisms is discussed. In addition, high resolution transmission electron microscopy reveals very smooth QW interfaces. The photoluminescence of such samples are strictly originating from radiative recombination of free excitons for temperatures above 100 K. At high temperature, the population of localized excitons, moderately trapped (5 meV) at low temperature, is negligible.

  6. Protein purification with vapor-phase carbon dioxide.

    Science.gov (United States)

    Winters, M A; Frankel, D Z; Debenedetti, P G; Carey, J; Devaney, M; Przybycien, T M

    1999-02-05

    Gaseous CO2 was used as an antisolvent to induce the fractional precipitation of alkaline phosphatase, insulin, lysozyme, ribonuclease, trypsin, and their mixtures from dimethylsulfoxide (DMSO). Compressed CO2 was added continuously and isothermally to stationary DMSO solutions (gaseous antisolvent, GAS). Dissolution of CO2 was accompanied by a pronounced, pressure-dependent volumetric expansion of DMSO and a consequent reduction in solvent strength of DMSO towards dissolved proteins. View cell experiments were conducted to determine the pressures at which various proteins precipitate from DMSO. The solubility of each protein in CO2-expanded DMSO was different, illustrating the potential to separate and purify proteins using gaseous antisolvents. Polyacrylamide gel electrophoresis in sodium dodecyl sulfate (SDS-PAGE) was used to quantify the separation of lysozyme from ribonuclease, alkaline phosphatase from insulin, and trypsin from catalase. Lysozyme biological activity assays were also performed to determine the composition of precipitates from DMSO initially containing lysozyme and ribonuclease. SDS-PAGE characterizations suggest that the composition and purity of solid-phase precipitated from a solution containing multiple proteins may be accurately controlled through the antisolvent's pressure. Insulin, lysozyme, ribonuclease, and trypsin precipitates recovered substantial amounts of biological activity upon redissolution in aqueous media. Alkaline phosphatase, however, was irreversibly denaturated. Vapor-phase antisolvents, which are easily separated and recovered from proteins and liquid solvents upon depressurization, appear to be a reliable and effective means of selectively precipitating proteins. Copyright 1999 John Wiley & Sons, Inc.

  7. Epitaxial growth and structure of monolayer cerium oxide films on Rh(111)

    Science.gov (United States)

    Chan, Lap Hong; Yuhara, Junji

    2017-07-01

    We prepared monolayer cerium (Ce) oxide films on Rh(111) to investigate their growth and structure using scanning tunneling microscopy (STM), low-energy electron diffraction, X-ray photoemission spectroscopy (XPS), and density functional theory (DFT) calculations. For quantitative analysis of Ce-oxide films, we used the combined techniques of XPS and Rutherford backscattering spectrometry to determine the concentration of Ce and O atoms. We prepared a monolayer (ML) Ce-oxide film by annealing a metallic Ce film at 0.3 ML coverage in an oxygen atmosphere. A well-ordered Ce-oxide phase with a (4×4) unit cell was obtained. The epitaxially grown Ce-oxide film aligned along the azimuthal direction of Rh(111). The number of Ce and O atoms in the (4×4) unit cell was estimated. The STM images indicated that the two-dimensional island growth of the p(4×4) phase with p3m1 symmetry can be explained using the missing Ce atoms model. A simulated STM image of the p(4×4) structural model was in good agreement with the experimental STM image. The formation of Ce-oxide films on Rh(111) at submonolayer coverage was discussed on the basis of the results of DFT+U calculations.

  8. Optimized growth conditions of epitaxial SnSe films grown by pulsed laser deposition

    Science.gov (United States)

    Hara, Takamitsu; Fujishiro, Hiroyuki; Naito, Tomoyuki; Ito, Akihiko; Goto, Takashi

    2017-12-01

    We have grown epitaxial tin monoselenide (SnSe) films on MgO or SrTiO3 (STO) substrates by pulsed laser deposition (PLD) at T s = 473 or 573 K, and investigated the optimized growth condition in terms of crystal orientation, crystallinity, and electrical resistivity. For the PLD procedure, a SnSe x (x = 1.0–1.6) target containing excess Se was used to compensate for the vaporization of Se. The crystal orientation and crystallinity of the SnSe films changed depending on the growth conditions, and the magnitude of the electrical resistivity ρ of the films was closely related to the crystalline nature. The SnSe film grown on the MgO substrate at T s = 573 K using the target with x = 1.4 was the most highly a-axis-oriented and highly crystalized among all of the films investigated in this study. However, the ρ of the film in the bc-plane was about one order of magnitude larger than those of the reported single crystal and the a-axis-oriented crystalline sample fabricated by spark plasma sintering. This larger ρ was suggested to result from the lattice mismatch and/or a small amount of nonstoichiometry in the film.

  9. Molecular beam epitaxy growth and magnetic properties of Cr-Co-Ga Heusler alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Wuwei, E-mail: wfeng@cugb.edu.cn; Wang, Weihua [School of Materials Science and Technology, China University of Geosciences, Beijing 100083 (China); Zhao, Chenglong [Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Van Quang, Nguyen; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics, University of Ulsan, Ulsan 680-749 (Korea, Republic of); Dung, Dang Duc [Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet Road, Ha Noi (Viet Nam)

    2015-11-15

    We have re-investigated growth and magnetic properties of Cr{sub 2}CoGa films using molecular beam epitaxy technique. Phase separation and precipitate formation were observed experimentally again in agreement with observation of multiple phases separation in sputtered Cr{sub 2}CoGa films by M. Meinert et al. However, significant phase separation could be suppressed by proper control of growth conditions. We showed that Cr{sub 2}CoGa Heusler phase, rather than Co{sub 2}CrGa phase, constitutes the majority of the sample grown on GaAs(001) at 450 {sup o}C. The measured small spin moment of Cr{sub 2}CoGa is in agreement with predicted HM-FCF nature; however, its Curie temperature is not as high as expected from the theoretical prediction probably due to the off-stoichiometry of Cr{sub 2}CoGa and the existence of the disorders and phase separation.

  10. van der Waals epitaxy of MoS₂ layers using graphene as growth templates.

    Science.gov (United States)

    Shi, Yumeng; Zhou, Wu; Lu, Ang-Yu; Fang, Wenjing; Lee, Yi-Hsien; Hsu, Allen Long; Kim, Soo Min; Kim, Ki Kang; Yang, Hui Ying; Li, Lain-Jong; Idrobo, Juan-Carlos; Kong, Jing

    2012-06-13

    We present a method for synthesizing MoS(2)/Graphene hybrid heterostructures with a growth template of graphene-covered Cu foil. Compared to other recent reports, (1, 2) a much lower growth temperature of 400 °C is required for this procedure. The chemical vapor deposition of MoS(2) on the graphene surface gives rise to single crystalline hexagonal flakes with a typical lateral size ranging from several hundred nanometers to several micrometers. The precursor (ammonium thiomolybdate) together with solvent was transported to graphene surface by a carrier gas at room temperature, which was then followed by post annealing. At an elevated temperature, the precursor self-assembles to form MoS(2) flakes epitaxially on the graphene surface via thermal decomposition. With higher amount of precursor delivered onto the graphene surface, a continuous MoS(2) film on graphene can be obtained. This simple chemical vapor deposition method provides a unique approach for the synthesis of graphene heterostructures and surface functionalization of graphene. The synthesized two-dimensional MoS(2)/Graphene hybrids possess great potential toward the development of new optical and electronic devices as well as a wide variety of newly synthesizable compounds for catalysts.

  11. Simultaneous epitaxial growth of anatase and rutile TiO 2 thin films by RF helicon magnetron sputtering

    Science.gov (United States)

    Miao, Lei; Tanemura, Sakae; Jin, Ping; Kaneko, Kenji; Terai, Asuka; Nabatova-Gabain, Nataliya

    2003-06-01

    Epitaxial films of TiO 2 with rutile structure on sapphire and anatase structure on SrTiO 3 were simultaneously grown by RF helicon magnetron sputtering of a TiO 2 target in Ar atmosphere. X-ray diffraction using θ-2 θ scan and pole figure plots confirmed the epitaxial relationship, which were rutile (1 0 1)∥sapphire (1 1 0), (0 1 0) f∥(0 0 1) s, and anatase (0 0 1)∥SrTiO 3(0 0 1), (1 0 0) f∥(1 0 0) s, where suffix f and s stand for the film and substrate, respectively. Moreover, observation by transmission electron microscopy identified the epitaxial film growth of single crystalline anatase and rutile structure with slight lattice distortion compared with bulk. The lattice constants of a and b, which were calculated from electron diffraction spots and lattice image in TEM of the films were contracted while that of c being expanded. According to the results of spectroscopic ellipsometry, the films show very high refractive indices ( n) at the designated wavelength range in comparison with the past reports on TiO 2 thin films. Although there are no bulk references in the anatase case, the values n of the rutile film are comparable to the bulk in the data-book. Such high refractive indices of the films indicate the compact texture of the epitaxial films fabricated by helicon sputtering.

  12. Hybrid liquid phase epitaxy processes for YBa{sub 2}Cu{sub 3}O{sub 7} film growth

    Energy Technology Data Exchange (ETDEWEB)

    Kursumovic, A [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Tomov, R I [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Huehne, R [Institut fuer Festkoerper-und Werkstoffforschung, Helmholtzstrasse 20, 01069 Dresden (Germany); MacManus-Driscoll, J L [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Glowacki, B A [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Evetts, J E [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2004-10-01

    A number of liquid phase epitaxy (LPE) related growth methods have been investigated. These hybrid-LPE processes enable high rate 'liquid assisted' growth of epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} films without the many disadvantages of classical LPE. Growth occurs by diffusive transport of Y through a thin liquid flux layer. This layer may be pre-deposited onto the substrate by various means including vacuum and non-vacuum techniques, or deposited at the growth temperature. The composition of the liquid layer is maintained during film growth by feeding YBa{sub 2}Cu{sub 3}O{sub 7}, or the separate components, either from the vapour or by a powder route. Growth rates up to 10 nm s{sup -1} have been demonstrated. Deposition of c-axis oriented epitaxial YBa{sub 2}Cu{sub 3}O{sub 7} is reported on both seeded and non-seeded substrates; the process is tolerant of a high substrate mismatch. Films 1-2 {mu}m thick with T{sub c} {approx} 90K and a critical current density J{sub c}> 2 MA cm{sup -2} have been grown on a range of single crystal substrates as well as on buffered textured metallic tapes. The mechanism of nucleation and growth from a thin liquid layer is described within the general theoretical framework of crystal growth. Particular features of the growth are the short time constant for equilibration of transients in the deposition conditions, the wide range of relative supersaturation spanned by the process, and dominance of interface kinetic effects compared to volume diffusion in the liquid flux.

  13. Photo-irradiation effects on GaAs atomic layer epitaxial growth. GaAs no genshiso epitaxial seicho ni okeru hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y.; Sasaki, M.; Ishikawa, H. (Toshiba Corp., Kawasaki (Japan). Research and Development Center)

    1990-08-10

    Single atomic layer epitaxy (ALE) aims at controlling a growing film at a precision of single molecular layer. In this article, it is reported that the growth temperature range of ALE was expanded by the vertical irradiation of KrF exima laser (248 nm) onto the substrate for the ALE growth of GaAs using the metalorganic chemical vapor deposition (MOCVD) method. Thanks for the results of the above experiment, it was demonstrated that the irradiation effect was not thermal, but photochemical. In addition, this article studies the possibility of adsorption layer irradiation and surface irradiation as the photo-irradiation mechanism, and points out that coexistence of both irradiation mechanisms can be considered and, in case of exima laser, strong possibility of direct irradiation of the adsorption layer because of its high power density. Hereinafter, by using both optical growth ALE and thermal growth ALE jointly, the degree of freedom of combination of hetero ALE increases and its application to various material systems becomes possible. 16 refs., 6 figs.

  14. Polarized Emission from Conjugated Polymer Chains Aligned by Epitaxial Growth during Off-Center Spin-Coating

    Directory of Open Access Journals (Sweden)

    Takuya Anzai

    2017-01-01

    Full Text Available Due to their macromolecular nature, conjugated polymers can be relatively easily aligned by applying a variety of processes resulting in either elongation or ordering of their conjugated backbones. Processes that induce chain alignment include electrospinning, mechanical rubbing, epitaxial growth, and nanoconfinement and unidirectional deposition techniques such as off-center spin-coating. In this study, we compare these deposition techniques by applying them to a green-emitting conjugated polymer material that exhibits liquid crystalline phase behavior. Our study reveals that while methods such as electrospinning and mechanical rubbing can be useful to locally generate polymer chain alignment, the combination of epitaxial growth using 1,3,5-trichlorobenzene as crystallizing agent with off-center spin-coating results in the formation of anisotropic nanofiber-like structures with enhanced crystallinity degree and polarized light-emission properties. The unidirectional epitaxial growth was also applied to a red-emitting polymer that exhibits polarization ratios up to 4.1. Our results emphasize that this simple solution formulation and process can be used for the fabrication of polarized thin films of a variety of conjugated polymers with potential applications in the advanced display technologies or analytical equipment fields.

  15. Comprehensive modeling of solid phase epitaxial growth using Lattice Kinetic Monte Carlo

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Bragado, Ignacio, E-mail: ignacio.martin@imdea.org [IMDEA Materials Institute, C/ Eric Kandel 2, Parque Científico y Tecnológico de Getafe 28906 Madrid, Getafe (Spain)

    2013-05-15

    Damage evolution of irradiated silicon is, and has been, a topic of interest for the last decades for its applications to the semiconductor industry. In particular, sometimes, the damage is heavy enough to collapse the lattice and to locally amorphize the silicon, while in other cases amorphization is introduced explicitly to improve other implanted profiles. Subsequent annealing of the implanted samples heals the amorphized regions through Solid Phase Epitaxial Regrowth (SPER). SPER is a complicated process. It is anisotropic, it generates defects in the recrystallized silicon, it has a different amorphous/crystalline (A/C) roughness for each orientation, leaving pits in Si(1 1 0), and in Si(1 1 1) it produces two modes of recrystallization with different rates. The recently developed code MMonCa has been used to introduce a physically-based comprehensive model using Lattice Kinetic Monte Carlo that explains all the above singularities of silicon SPER. The model operates by having, as building blocks, the silicon lattice microconfigurations and their four twins. It detects the local configurations, assigns microscopical growth rates, and reconstructs the positions of the lattice locally with one of those building blocks. The overall results reproduce the (a) anisotropy as a result of the different growth rates, (b) localization of SPER induced defects, (c) roughness trends of the A/C interface, (d) pits on Si(1 1 0) regrown surfaces, and (e) bimodal Si(1 1 1) growth. It also provides physical insights of the nature and shape of deposited defects and how they assist in the occurrence of all the above effects.

  16. In-situ spectral reflectance for improving molecular beam epitaxy device growth

    Energy Technology Data Exchange (ETDEWEB)

    Breiland, W.G. [Sandia National Labs., Albuquerque, NM (United States). Chemical Processing Sciences Dept.; Hammons, B.E.; Hou, H.Q.; Killeen, K.P.; Klem, J.F.; Reno, J.L.; Sherwin, M.

    1997-05-01

    This report summarizes the development of in situ spectral reflectance as a tool for improving the quality, reproducibility, and yield of device structures grown from compound semiconductors. Although initially targeted at MBE (Molecular Beam Epitaxy) machines, equipment difficulties forced the authors to test most of their ideas on a MOCVD (Metal Organic Chemical Vapor Deposition) reactor. A pre-growth control strategy using in situ reflectance has led to an unprecedented demonstration of process control on one of the most difficult device structures that can be grown with compound semiconductor materials. Hundreds of vertical cavity surface emitting lasers (VCSEL`s) were grown with only {+-} 0.3% deviations in the Fabry-Perot cavity wavelength--a nearly ten-fold improvement over current calibration methods. The success of the ADVISOR (Analysis of Deposition using Virtual Interfaces and Spectroscopic Optical Reflectance) method has led to a great deal of interest from the commercial sector, including use by Hewlett Packard and Honeywell. The algorithms, software and reflectance design are being evaluated for patents and/or license agreements. A small company, Filmetrics, Inc., is incorporating the ADVISOR analysis method in its reflectometer product.

  17. Thin film growth of CaFe2As2 by molecular beam epitaxy

    Science.gov (United States)

    Hatano, T.; Kawaguchi, T.; Fujimoto, R.; Nakamura, I.; Mori, Y.; Harada, S.; Ujihara, T.; Ikuta, H.

    2016-01-01

    Film growth of CaFe2As2 was realized by molecular beam epitaxy on six different substrates that have a wide variation in the lattice mismatch to the target compound. By carefully adjusting the Ca-to-Fe flux ratio, we obtained single-phase thin films for most of the substrates. Interestingly, an expansion of the CaFe2As2 lattice to the out-of-plane direction was observed for all films, even when an opposite strain was expected. A detailed microstructure observation of the thin film grown on MgO by transmission electron microscope revealed that it consists of cube-on-cube and 45°-rotated domains. The latter domains were compressively strained in plane, which caused a stretching along the c-axis direction. Because the domains were well connected across the boundary with no appreciable discontinuity, we think that the out-of-plane expansion in the 45°-rotated domains exerted a tensile stress on the other domains, resulting in the unexpectedly large c-axis lattice parameter, despite the apparently opposite lattice mismatch.

  18. Solution-Based Epitaxial Growth of Magnetically Responsive Cu@Ni Nanowires

    KAUST Repository

    Zhang, Shengmao

    2010-02-23

    An experiment was conducted to show the solution-based epitaxial growth of magnetically responsive Cu@Ni nanowires. The Ni-sheathed Cu nanowires were synthesized with a one-pot approach. 30 mL of high concentration NaOH, Cu(NO3)2. 3H2O, Cu(NO3)2. 3H2O and 0.07-0.30 mL of Ni(NO3)2. 6H 2O aqueous solutions were added into a plastic reactor with a capacity of 50.0 mL. A varying amount of ethylenediamine (EDA) and hydrazine were also added sequentially, followed by thorough mixing of all reagents. The dimension, morphology, and chemical composition of the products were examined with scanning electron microscopy with energy dispersive X-ray spectroscopy. The XPS analysis on the as formed Cu nanowires confirms that there is indeed no nickel inclusion in the nanowires prior to the formation of nickel overcoat, which rules out the possibility of Cu-Ni alloy formation.

  19. Growth of layered superconductor β-PdBi{sub 2} films using molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Denisov, N.V., E-mail: denisov@iacp.dvo.ru [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Matetskiy, A.V.; Tupkalo, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); Zotov, A.V. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation); Department of Electronics, Vladivostok State University of Economics and Service, 690600 Vladivostok (Russian Federation); Saranin, A.A. [Institute of Automation and Control Processes FEB RAS, 5 Radio Street, 690041 Vladivostok (Russian Federation); School of Natural Sciences, Far Eastern Federal University, 690950 Vladivostok (Russian Federation)

    2017-04-15

    Highlights: • Bulk β-PdBi{sub 2} is layered material with advanced properties of topological superconductor. • We present a method for growing β-PdBi{sub 2} films of a desired thickness. • Method utilizes MBE growth of β-PdBi{sub 2}, using Bi(111) film on Si(111) as a template. • Electronic and superconducting properties of the films are similar to those of bulk β-PdBi{sub 2}. - Abstract: Bulk β-PdBi{sub 2} layered material exhibits advanced properties and is supposed to be probable topological superconductor. We present a method based on molecular beam epitaxy that allows us to grow β-PdBi{sub 2} films from a single β-PdBi{sub 2} triple layer up to the dozens of triple layers, using Bi(111) film on Si(111) as a template. The grown films demonstrate structural, electronic and superconducting properties similar to those of bulk β-PdBi{sub 2} crystals. Ability to grow the β-PdBi{sub 2} films of desired thickness opens the promising possibilities to explore fascinating properties of this advanced material.

  20. Bulk growth and surface characterization of epitaxy ready cadmium zinc telluride substrates for use in IR imaging applications

    Science.gov (United States)

    Flint, J. P.; Martinez, B.; Betz, T. E. M.; Mackenzie, J.; Kumar, F. J.; Burgess, L.

    2017-02-01

    Cadmium Zinc Telluride (Cd1-xZnxTe or CZT) is a compound semiconductor substrate material that has been used for infrared detector (IR) applications for many years. CZT is a perfect substrate for the epitaxial growth of Mercury Cadmium Telluride (Hg1-xCdxTe or MCT) epitaxial layers and remains the material of choice for many high performance IR detectors and focal plane arrays that are used to detect across wide IR spectral bands. Critical to the fabrication of high performance MCT IR detectors is a high quality starting CZT substrate, this being a key determinant of epitaxial layer crystallinity, defectivity and ultimately device electro-optical performance. In this work we report on a new source of substrates suitable for IR detector applications, grown using the Travelling Heater Method (THM). This proven method of crystal growth has been used to manufacture high quality IR specification CZT substrates where industry requirements for IR transmission, dislocations, tellurium precipitates and copper impurity levels have been met. Results will be presented for the chemo-mechanical (CMP) polishing of CZT substrates using production tool sets that are identical to those that are used to produce epitaxy-ready surface finishes on related IR compound semiconductor materials such as GaSb and InSb. We will also discuss the requirements to scale CZT substrate manufacture and how with a new III-V like approach to both CZT crystal growth and substrate polishing, we can move towards a more standardized product and one that can ultimately deliver a standard round CZT substrate, as is the case for competing IR materials such as GaSb, InSb and InP.

  1. Conventional and pendeo-epitaxial growth of GaN(0 0 0 1) thin films on Si(1 1 1) substrates

    Science.gov (United States)

    Davis, Robert F.; Gehrke, Thomas; Linthicum, Kevin J.; Preble, Edward; Rajagopal, Pradeep; Ronning, Carsten; Zorman, Christian; Mehregany, Mehran

    2001-10-01

    Single-crystal wurtzitic GaN(0 0 0 1) films have been grown via conventional methods on high-temperature AlN(0 0 0 1) buffer layers previously deposited on 3C-SiC(1 1 1)/Si(1 1 1) substrates using metal organic vapor phase epitaxy (MOVPE). Formation of the 3C-SiC transition layer employed a carburization step and the subsequent deposition of epitaxial 3C-SiC(1 1 1) on the Si(1 1 1) surface using atmospheric pressure chemical vapor deposition (APCVD) for both processes. Similar films, except with significantly reduced dislocation densities, have been grown via pendeo-epitaxy (PE) from the (1 1 2¯ 0) sidewalls of silicon nitride masked, raised, rectangular, and [1 1¯ 0 0] oriented GaN stripes etched from films conventionally grown on similarly prepared, Si-based, multilayer substrates. The FWHM of the (0 0 0 2) X-ray diffraction peak of the conventionally grown GaN was 1443 arcsec. The FWHM of the photoluminescence (PL) spectra for the near band-edge emission on these films was 19 meV. Tilting in the coalesced PE-grown GaN epilayers of 0.2° was confined to the areas of lateral overgrowth over the masks; no tilting was observed in the material suspended above the trenches. The strong, low-temperature PL band-edge peak at 3.456 eV with an FWHM of 17 meV in the PE films was comparable to that observed in PE GaN films grown on AlN/6H-SiC(0 0 0 1) substrates.

  2. Epitaxial growth of cobalt oxide phases on Ru(0001) for spintronic device applications

    Science.gov (United States)

    Olanipekun, Opeyemi; Ladewig, Chad; Kelber, Jeffry A.; Randle, Michael D.; Nathawat, Jubin; Kwan, Chun-Pui; Bird, Jonathan P.; Chakraborti, Priyanka; Dowben, Peter A.; Cheng, Tao; Goddard, W. A., III

    2017-09-01

    Cobalt oxide films are of technological interest as magnetic substrates that may support the direct growth of graphene, for use in various spintronic applications. In this work, we demonstrate the controlled growth of both Co3O4(111) and CoO(111) on Ru(0001) substrates. The growth is performed by Co molecular beam epitaxy, at a temperature of 500 K and in an O2 partial pressure of 10-4 Torr for Co3O4(111), and 7.5 × 10-7 Torr for CoO(111). The films are distinguished by their dissimilar Co 2p x-ray photoemission (XPS) spectra, while XPS-derived O/Co stoichiometric ratios are 1.33 for Co3O4(111) and 1.1 for CoO(111). Electron energy loss (EELS) spectra for Co3O4(111) indicate interband transitions at ˜2.1 and 3.0 eV, while only a single interband transition near 2.0 eV is observed for CoO(111). Low energy electron diffraction (LEED) data for Co3O4(111) indicate twinning during growth, in contrast to the LEED data for CoO(111). For Co3O4(111) films of less than 20 Å average thickness, however, XPS, LEED and EELS data are similar to those of CoO(111). XPS data indicate that both Co oxide phases are hydroxylated at all thicknesses. The two phases are moreover found to be thermally stable to at least 900 K in UHV, while ex situ atomic force microscopy measurements of Co3O4(111)/Ru(0001) indicate an average surface roughness below 1 nm. Electrical measurements indicate that Co3O4(111)/Ru(0001) films exhibit dielectric breakdown at threshold voltages of ˜1 MV cm-1. Collectively, these data show that the growth procedures yield Co3O4(111) films with topographical and electrical characteristics that are suitable for a variety of advanced device applications.

  3. Direct growth of hexagonal boron nitride/graphene heterostructures on cobalt foil substrates by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Zhongguang; Khanaki, Alireza; Tian, Hao; Zheng, Renjing; Suja, Mohammad; Liu, Jianlin, E-mail: jianlin@ece.ucr.edu [Quantum Structures Laboratory, Department of Electrical and Computer Engineering, University of California, Riverside, California 92521 (United States); Zheng, Jian-Guo [Irvine Materials Research Institute, University of California, Irvine, California 92697-2800 (United States)

    2016-07-25

    Graphene/hexagonal boron nitride (G/h-BN) heterostructures have attracted a great deal of attention because of their exceptional properties and wide variety of potential applications in nanoelectronics. However, direct growth of large-area, high-quality, and stacked structures in a controllable and scalable way remains challenging. In this work, we demonstrate the synthesis of h-BN/graphene (h-BN/G) heterostructures on cobalt (Co) foil by sequential deposition of graphene and h-BN layers using plasma-assisted molecular beam epitaxy. It is found that the coverage of h-BN layers can be readily controlled on the epitaxial graphene by growth time. Large-area, uniform-quality, and multi-layer h-BN films on thin graphite layers were achieved. Based on an h-BN (5–6 nm)/G (26–27 nm) heterostructure, capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration were fabricated to evaluate the dielectric properties of h-BN. The measured breakdown electric field showed a high value of ∼2.5–3.2 MV/cm. Both I-V and C-V characteristics indicate that the epitaxial h-BN film has good insulating characteristics.

  4. High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

    Science.gov (United States)

    Freundlich, A.; Newman, F.; Monier, C.; Street, S.; Dargan, P.; Levy, M.

    2005-01-01

    In this work it is shown that high quality GaAs photovoltaic devices can be produced by Molecular Beam Epitaxy (MBE) with growth rates comparable to metal-organic chemical vapor deposition (MOCVD) through the subsitution of group III solid sources by metal-organic compounds. The influence the III/V flux-ratio and growth temperatures in maintaining a two dimensional layer by layer growth mode and achieving high growth rates with low residual background impurities is investigated. Finally subsequent to the study of the optimization of n- and p doping of such high growth rate epilayers, results from a preliminary attempt in the fabrication of GaAs photovoltaic devices such as tunnel diodes and solar cells using the proposed high growth rate approach are reported.

  5. Screw dislocation-driven epitaxial solution growth of ZnO nanowires seeded by dislocations in GaN substrates.

    Science.gov (United States)

    Morin, Stephen A; Jin, Song

    2010-09-08

    In the current examples of dislocation-driven nanowire growth, the screw dislocations that propagate one-dimensional growth originate from spontaneously formed highly defective "seed" crystals. Here we intentionally utilize screw dislocations from defect-rich gallium nitride (GaN) thin films to propagate dislocation-driven growth, demonstrating epitaxial growth of zinc oxide (ZnO) nanowires directly from aqueous solution. Atomic force microscopy confirms screw dislocations are present on the native GaN surface and ZnO nanowires grow directly from dislocation etch pits of heavily etched GaN surfaces. Furthermore, transmission electron microscopy confirms the existence of axial dislocations. Eshelby twist in the resulting ZnO nanowires was confirmed using bright-/dark-field imaging and twist contour analysis. These results further confirm the connection between dislocation source and nanowire growth. This may eventually lead to defect engineering strategies for rationally designed catalyst-free dislocation-driven nanowire growth for specific applications.

  6. Growth of cubic InN on InAs(0 0 1) by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    Lima, A. P.; Tabata, A.; Leite, J. R.; Kaiser, S.; Schikora, D.; Schöttker, B.; Frey, T.; As, D. J.; Lischka, K.

    1999-05-01

    Cubic InN layers were grown on the top of InAs buffer films on GaAs(0 0 1) substrates by plasma-assisted molecular beam epitaxy. The growth of the c-InN films was initiated by a nitridation of the InAs overlayers at 450°C. The lattice constant of c-InN, measured by X-ray, is equal to (4.98±0.01) Å, in agreement to RHEED measurements made during the growth. Transmission electron microscopy measurements detected stacking faults in the InN layers parallel to the {1 1 1} InN planes.

  7. Molecular beam epitaxy of SrTiO3 on Si (001): Early stages of the growth and strain relaxation

    Science.gov (United States)

    Niu, G.; Saint-Girons, G.; Vilquin, B.; Delhaye, G.; Maurice, J.-L.; Botella, C.; Robach, Y.; Hollinger, G.

    2009-08-01

    The molecular beam epitaxy of SrTiO3 (STO) layers on Si (001) is studied, focusing on the early stages of the growth and on the strain relaxation process. Evidence is given that even for optimized growth conditions, STO grows initially amorphous on silicon and recrystallizes, leading to the formation of an atomically abrupt heterointerface with silicon. Just after recrystallization, STO is partially strained. Further increase in its thickness leads to the onset of a progressive plastic relaxation mechanism. STO recovers its bulk lattice parameter for thicknesses of the order of 30 ML.

  8. Liquid phase epitaxial growth and characterization of germanium far infrared blocked impurity band detectors

    Energy Technology Data Exchange (ETDEWEB)

    Bandaru, Jordana [Univ. of California, Berkeley, CA (United States)

    2001-01-01

    Germanium Blocked Impurity Band (BIB) detectors require a high purity blocking layer (< 1013 cm-3) approximately 1 mm thick grown on a heavily doped active layer (~ 1016cm-3) approximately 20 mm thick. Epilayers were grown using liquid phase epitaxy (LPE) of germanium out of lead solution. The effects of the crystallographic orientation of the germanium substrate on LPE growth modes were explored. Growth was studied on substrates oriented by Laue x-ray diffraction between 0.02° and 10° from the {111} toward the {100}. Terrace growth was observed, with increasing terrace height for larger misorientation angles. It was found that the purity of the blocking layer was limited by the presence of phosphorus in the lead solvent. Unintentionally doped Ge layers contained ~1015 cm-3 phosphorus as determined by Hall effect measurements and Photothermal Ionization Spectroscopy (PTIS). Lead purification by vacuum distillation and dilution reduced the phosphorus concentration in the layers to ~ 1014 cm-3 but further reduction was not observed with successive distillation runs. The graphite distillation and growth components as an additional phosphorus source cannot be ruled out. Antimony (~1016 cm-3) was used as a dopant for the active BIB layer. A reduction in the donor binding energy due to impurity banding was observed by variable temperature Hall effect measurements. A BIB detector fabricated from an Sb-doped Ge layer grown on a pure substrate showed a low energy photoconductive onset (~6 meV). Spreading resistance measurements on doped layers revealed a nonuniform dopant distribution with Sb pile-up at the layer surface, which must be removed by chemomechanical polishing. Sb diffusion into the pure substrate was observed by Secondary Ion Mass Spectroscopy (SIMS) for epilayers grown at 650 C. The Sb concentration at the interface dropped by an order of magnitude

  9. Melt-vapor phase transition in the lead-selenium system at atmospheric and low pressure

    Science.gov (United States)

    Volodin, V. N.; Burabaeva, N. M.; Trebukhov, S. A.

    2016-03-01

    The boiling temperature and the corresponding vapor phase composition in the existence domain of liquid solutions were calculated from the partial pressures of saturated vapor of the components and lead selenide over liquid melts in the lead-selenium system. The phase diagram was complemented with the liquid-vapor phase transition at atmospheric pressure and in vacuum of 100 Pa, which allowed us to judge the behavior of the components during the distillation separation.

  10. Synthesis of polymer nanoparticles via vapor phase deposition onto liquid substrates.

    Science.gov (United States)

    Haller, Patrick D; Gupta, Malancha

    2014-12-01

    In this article, the growth of polymer nanoparticles formed at the liquid-vapor interface via vapor phase polymerization is studied. The particles grow by polymer aggregation, which is driven by the surface tension interaction between the liquid and polymer. It is demonstrated that the mechanism of particle growth is determined by whether polymer particles remain at the liquid-vapor interface or submerge into the liquid. The position of the particles depends on the interaction between the polymer and the liquid. For example, the deposition of poly(n-butyl acrylate) onto poly(dimethyl siloxane) and Krytox liquids leads to the formation of nanoparticles that remain at the liquid-vapor interface. The size of these particles increases as a function of deposition time. The deposition of poly(4-vinylpyridine) onto poly(dimethyl siloxane) and Krytox leads to the formation of nanoparticles that submerge into the liquid. The size of these particles does not significantly change with deposition time. Our study offers a new rapid, one-step synthetic approach for fabricating functional polymer nanoparticles for applications in catalysis, photonics, and drug delivery. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Growth and Properties of molecular beam epitaxially grown ferromagnetic Fe-doped TiO2 rutile films on TiO2

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong J.; Thevuthasan, Suntharampillai; Droubay, Timothy C.; Lea, Alan S.; Wang, Chong M.; Shutthanandan, V.; Chambers, Scott A.; Sears, R.; Taylor, B.; Sinkovic, Boris

    2004-05-03

    We have grown epitaxial Fe-doped TiO₂ rutile films on rutile TiO₂(110) substrates, and have explored the resulting compositional, structural, morphological and magnetic properties. Clusters of mixed TiO₂ rutile and Fe₃O₄ form on the surface of a continuous rutile epitaxial film during growth. Room temperature ferromagnetism is observed, and is associated with the formation of secondary phase Fe₃O₄ rather than a true diluted magnetic oxide semiconductor.

  12. Stabilisation of late transition metal and noble metal films in hexagonal and body centred tetragonal phases by epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Hueger, E.

    2005-08-26

    In this work ultrathin metallic films with a crystal phase different to their natural bulk structure were produced by hetero-epitaxial growth on metallic substrates. A further aim of this work was to understand the initiation, growth and stability of crystal phase modifications of these films. there exist cases where the films turn beyond the pseudomorphic-growth to a crystal phase different from their natural bulk structure. The present work presents and discusses such a case in addition to the general phenomenon of pseudomorphic-growth. In particular it is shown that metals whose natural phase is face centred cubic (fcc) can be grown in body centred tetragonal (bct) or hexagonal close packed (hcp) phases in the form of thin films on (001) surfaces of appropriate substrates. The growth behavior, electron diffraction analysis, appearance conditions, geometric fit considerations, examples and a discussion of the phase stability of non-covered films and superlattices is given reviewing all epitaxial-systems whose diffraction pattern can be explained by the hexagonal or pseudomorphic bct phase. (orig.)

  13. Evolution of threading dislocations in GaN epitaxial laterally overgrown on GaN templates using self-organized graphene as a nano-mask

    Science.gov (United States)

    Xu, Yu; Cao, Bing; He, Shunyu; Qi, Lin; Li, Zongyao; Cai, Demin; Zhang, Yumin; Ren, Guoqiang; Wang, Jianfeng; Wang, Chinhua; Xu, Ke

    2017-09-01

    Growth of high-quality GaN within a limited thickness is still a challenge, which is important both in improving device performance and in reducing the cost. In this work, a self-organized graphene is investigated as a nano-mask for two-step GaN epitaxial lateral overgrowth (2S-ELOG) in hydride vapor phase epitaxy. Efficient improvement of crystal quality was revealed by x-ray diffraction. The microstructural properties, especially the evolution of threading dislocations (TDs), were investigated by scanning electron microscopy and transmission electron microscopy. Stacking faults blocked the propagation of TDs, and fewer new TDs were subsequently generated by the coalescence of different orientational domains and lateral-overgrown GaN. This evolution mechanism of TDs was different from that of traditional ELOG technology or one-step ELOG (1S-ELOG) technology using a two-dimensional (2D) material as a mask.

  14. Precipitation growth of graphene under exfoliated hexagonal boron nitride to form heterostructures on cobalt substrate by molecular beam epitaxy

    Science.gov (United States)

    Zheng, Renjing; Khanaki, Alireza; Tian, Hao; He, Yanwei; Cui, Yongtao; Xu, Zhongguang; Liu, Jianlin

    2017-07-01

    Research on graphene/hexagonal boron nitride (h-BN) heterostructures has attracted much attention for band engineering and device performance optimization of graphene. However, the growth of graphene/h-BN heterostructure is still challenging, which usually requires high growth temperature and long growth duration. In this paper, we demonstrate graphene/h-BN heterostructures by growing graphene onto the substrates which consist of exfoliated h-BN flakes on Co thin films using molecular beam epitaxy. The heterostructure samples grown at different temperatures and growth times were characterized by Raman, optical microscopy, atomic force microscopy, microwave impedance microscopy, and scanning tunneling microscopy. It is found that the graphene/h-BN heterostructures were formed by the formation of graphene underneath rather than on top of the h-BN flakes. The growth mechanism is discussed.

  15. One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy

    Science.gov (United States)

    Sahoo, Prasana K.; Memaran, Shahriar; Xin, Yan; Balicas, Luis; Gutiérrez, Humberto R.

    2018-01-01

    Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral heterostructures with multiple junctions remains a challenge. Transition-metal-dichalcogenide lateral heterostructures have been synthesized via single-step, two-step or multi-step growth processes. However, these methods lack the flexibility to control, in situ, the growth of individual domains. In situ synthesis of multi-junction lateral heterostructures does not require multiple exchanges of sources or reactors, a limitation in previous approaches as it exposes the edges to ambient contamination, compromises the homogeneity of domain size in periodic structures, and results in long processing times. Here we report a one-pot synthetic approach, using a single heterogeneous solid source, for the continuous fabrication of lateral multi-junction heterostructures consisting of monolayers of transition-metal dichalcogenides. The sequential formation of heterojunctions is achieved solely by changing the composition of the reactive gas environment in the presence of water vapour. This enables selective control of the water-induced oxidation and volatilization of each transition-metal precursor, as well as its nucleation on the substrate, leading to sequential edge-epitaxy of distinct transition-metal dichalcogenides. Photoluminescence maps confirm the sequential spatial modulation of the bandgap, and atomic-resolution images reveal defect-free lateral connectivity between the different transition-metal-dichalcogenide domains within a single crystal structure. Electrical transport measurements revealed diode-like responses across the

  16. Lattice kinetic Monte Carlo simulation study of the early stages of epitaxial GaN(0001) growth

    Science.gov (United States)

    Chugh, Manjusha; Ranganathan, Madhav

    2017-11-01

    The early stages of GaN(0001) epitaxial growth are modeled using a lattice-based kinetic Monte Carlo simulation. The simulation explicitly includes both the constituent atoms and is performed on the wurtzite crystal structure of GaN. The deposition flux is chosen to mimic conditions in a molecular beam epitaxy chamber. The surface diffusion barriers used for the growth simulation are obtained from ab initio density functional theory based calculations. The evolution of submonolayer islands from small random clusters to ordered triangular islands is captured in these simulations. Further the submonolayer island density statistics is calculated to illustrate standard scaling behavior. The island density as a function of coverage is used to show the different regimes of submonolayer growth and the transition to multi-layer growth. The island density dependence on deposition flux, Ga:N flux ratio, and temperature are also shown to be reasonable and consistent with experiments. We further highlight the importance of N-rotation, which is a diffusion mechanism for nitrogen adatoms under moderate gallium excess.

  17. Layer-Controlled Chemical Vapor Deposition Growth of MoS2 Vertical Heterostructures via van der Waals Epitaxy.

    Science.gov (United States)

    Samad, Leith; Bladow, Sage M; Ding, Qi; Zhuo, Junqiao; Jacobberger, Robert M; Arnold, Michael S; Jin, Song

    2016-07-26

    The fascinating semiconducting and optical properties of monolayer and few-layer transition metal dichalcogenides, as exemplified by MoS2, have made them promising candidates for optoelectronic applications. Controllable growth of heterostructures based on these layered materials is critical for their successful device applications. Here, we report a direct low temperature chemical vapor deposition (CVD) synthesis of MoS2 monolayer/multilayer vertical heterostructures with layer-controlled growth on a variety of layered materials (SnS2, TaS2, and graphene) via van der Waals epitaxy. Through precise control of the partial pressures of the MoCl5 and elemental sulfur precursors, reaction temperatures, and careful tracking of the ambient humidity, we have successfully and reproducibly grown MoS2 vertical heterostructures from 1 to 6 layers over a large area. The monolayer MoS2 heterostructure was verified using cross-sectional high resolution transmission electron microscopy (HRTEM) while Raman and photoluminescence spectroscopy confirmed the layer-controlled MoS2 growth and heterostructure electronic interactions. Raman, photoluminescence, and energy dispersive X-ray spectroscopy (EDS) mappings verified the uniform coverage of the MoS2 layers. This reaction provides an ideal method for the scalable layer-controlled growth of transition metal dichalcogenide heterostructures via van der Waals epitaxy for a variety of optoelectronic applications.

  18. Growth of epitaxial Pt thin films on (0 0 1) SrTiO{sub 3} by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Kahsay, A. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Polo, M.C., E-mail: mcpolo@ub.edu [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Ferrater, C.; Ventura, J. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain); Rebled, J.M. [Departament d’Electrònica, Universitat de Barcelona Institut de Nanociència i Nanotecnologia IN 2UB, 08028 Barcelona (Spain); Varela, M. [Departament de Física Aplicada i Òptica, Universitat de Barcelona, 08028 Barcelona (Spain)

    2014-07-01

    The growth of platinum thin film by rf magnetron sputtering on SrTiO{sub 3}(0 0 1) substrates for oxide based devices was investigated. Platinum films grown at temperatures higher than 750 °C were epitaxial ([1 0 0]Pt(0 0 1)//[1 0 0]STO(0 0 1)), whereas at lower temperatures Pt(1 1 1) films were obtained. The surface morphology of the Pt films showed a strong dependence on the deposition temperature as was revealed by atomic force microscopy (AFM). At elevated temperatures there is a three-dimensional (3D) growth of rectangular atomically flat islands with deep boundaries between them. On the other hand, at low deposition temperatures, a two-dimensional (2D) layered growth was observed. The transition from 2D to 3D growth modes was observed that occurs for temperatures around 450 °C. The obtained epitaxial thin films also formed an atomically sharp interface with the SrTiO{sub 3}(0 0 1) substrate as confirmed by HRTEM.

  19. Sulfur incorporation during epitaxial growth of inp in the IN-HC1-PH3-H2 system

    Science.gov (United States)

    Grundmann, D.; Jürgensen, H.; Heyen, M.; Korec, J.; Balk, P.

    1985-11-01

    The growth and dopant uptake of InP in the In-HCl-PH3-H2 system using H2S as a dopant source has been investigated. As extension of an earlier model for the epitaxial growth of InP the sulfur uptake is described as the formation of InS which yields to the regular solution InP1-xSx. The molar ratio x is determined by the ratio of the incorporation flux of the dopant and the growth rate of the host lattice. Calculations considering the thermodynamics of the system and the kinetic steps of the growth process show that the model satisfactorily accounts for the experimental data.

  20. The residual effects of germanium as an n-type dopant for GaAs during molecular beam epitaxial growth

    Science.gov (United States)

    Li, Ai-zhen; Milnes, A. G.

    1983-06-01

    In the molecular beam epitaxy of GaAs, the use of Ge as an n-type dopant results in a residual doping effect of the order of 10 16 cm -3, that can prevent the achievement of an abrupt doping change when the Ge effusion cell is shuttered. The extent of the problem is examined and it is shown that the parasitic doping may persist over a substantial part of a μm of growth under certain conditions. Interruption of the growth, with continued pumping of the growth chamber and maintenance of the arsenic flux, is found to be a method of minimizing the memory effect. From thermodynamic considerations it is suggested that the cause of the residual doping effect is a scavenging of Ge from the growth chamber in a series of reactions involving principally O 2, GeO, CO and As 2, C and H 2.

  1. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    Science.gov (United States)

    Li, Ming-Yang; Shi, Yumeng; Cheng, Chia-Chin; Lu, Li-Syuan; Lin, Yung-Chang; Tang, Hao-Lin; Tsai, Meng-Lin; Chu, Chih-Wei; Wei, Kung-Hwa; He-Hau, Jr.; Chang, Wen-Hao; Suenaga, Kazu; Li, Lain-Jong

    2015-07-01

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  2. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface

    KAUST Repository

    Li, Ming Yang

    2015-07-30

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface.

  3. NANOELECTRONICS. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface.

    Science.gov (United States)

    Li, Ming-Yang; Shi, Yumeng; Cheng, Chia-Chin; Lu, Li-Syuan; Lin, Yung-Chang; Tang, Hao-Lin; Tsai, Meng-Lin; Chu, Chih-Wei; Wei, Kung-Hwa; He, Jr-Hau; Chang, Wen-Hao; Suenaga, Kazu; Li, Lain-Jong

    2015-07-31

    Two-dimensional transition metal dichalcogenides (TMDCs) such as molybdenum sulfide MoS2 and tungsten sulfide WSe2 have potential applications in electronics because they exhibit high on-off current ratios and distinctive electro-optical properties. Spatially connected TMDC lateral heterojunctions are key components for constructing monolayer p-n rectifying diodes, light-emitting diodes, photovoltaic devices, and bipolar junction transistors. However, such structures are not readily prepared via the layer-stacking techniques, and direct growth favors the thermodynamically preferred TMDC alloys. We report the two-step epitaxial growth of lateral WSe2-MoS2 heterojunction, where the edge of WSe2 induces the epitaxial MoS2 growth despite a large lattice mismatch. The epitaxial growth process offers a controllable method to obtain lateral heterojunction with an atomically sharp interface. Copyright © 2015, American Association for the Advancement of Science.

  4. EuO and Gd-doped EuO thin films. Epitaxial growth and properties

    Energy Technology Data Exchange (ETDEWEB)

    Sutarto, Ronny

    2009-07-06

    this respect the quality of many of the doped EuO samples used in the past bulk studies. The focus of this thesis is on the preparation and the properties of high-quality single-crystalline EuO and Gd-doped EuO thin films. The so-called Eu-distillation-assisted molecular beam epitaxy (MBE) has been employed to achieve full control of the stoichiometry. The films have been epitaxially grown on yttria-stabilized cubic zirconia (YSZ) (001) substrates. By a systematic variation of the oxygen deposition rates, we have been able to observe sustained oscillations in the intensity of the reflection high-electron energy diffraction (RHEED) pattern during growth. We thus have demonstrated that layer-by-layer growth has been achieved for the first time. We also have confirmed that YSZ indeed supplies oxygen during the initial stages of growth, yet the EuO stoichiometry can still be well maintained. In the case of Gd-doped EuO films, the presence of Gd even helps to stabilize the layer-by-layer growth mode. It is important to achieve this growth mode, since it enables the preparation of films with very smooth and at surfaces. This in turn facilitates the capping of the films with a thin Al overlayer in order to protect the films against degradation under ambient conditions. More important, the smoothness of the lm will enable the preparation of high quality device structures. By using ex-situ soft x-ray absorption spectroscopy (XAS) at the Eu and Gd M{sub 4,5} edges, we have confirmed that the films are completely free from Eu{sup 3+} contaminants, and we were able to determine reliably the actual Gd concentration. This actual Gd concentration could in fact significantly deviate from the nominal Gd/Eu evaporation ratio. From magnetization and susceptibility measurements, we found the Curie temperature to increase smoothly as a function of doping from 69 K up to a maximum of 125 K, all with a saturation moment of 7 {mu}B. A threshold behavior was not observed for Gd concentrations

  5. ZnO Nanowires Synthesized by Vapor Phase Transport Deposition on Transparent Oxide Substrates

    Directory of Open Access Journals (Sweden)

    Taylor Curtis

    2010-01-01

    Full Text Available Abstract Zinc oxide nanowires have been synthesized without using metal catalyst seed layers on fluorine-doped tin oxide (FTO substrates by a modified vapor phase transport deposition process using a double-tube reactor. The unique reactor configuration creates a Zn-rich vapor environment that facilitates formation and growth of zinc oxide nanoparticles and wires (20–80 nm in diameter, up to 6 μm in length, density <40 nm apart at substrate temperatures down to 300°C. Electron microscopy and other characterization techniques show nanowires with distinct morphologies when grown under different conditions. The effect of reaction parameters including reaction time, temperature, and carrier gas flow rate on the size, morphology, crystalline structure, and density of ZnO nanowires has been investigated. The nanowires grown by this method have a diameter, length, and density appropriate for use in fabricating hybrid polymer/metal oxide nanostructure solar cells. For example, it is preferable to have nanowires no more than 40 nm apart to minimize exciton recombination in polymer solar cells.

  6. Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

    KAUST Repository

    Shen, Youde

    2014-08-13

    Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires. © 2014 American Chemical Society.

  7. Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon

    Science.gov (United States)

    Robson, Mitchell; Azizur-Rahman, Khalifa M.; Parent, Daniel; Wojdylo, Peter; Thompson, David A.; LaPierre, Ray R.

    2017-12-01

    Vertical III-V nanowires are capable of resonant absorption at specific wavelengths by tuning the nanowire diameter, thereby exceeding the absorption of equivalent thin films. These properties may be exploited to fabricate multispectral infrared (IR) photodetectors, directly integrated with Si, without the need for spectral filters or vertical stacking of heterostructures as required in thin film devices. In this study, multiple InAsSb nanowire arrays were grown simultaneously on Si by molecular beam epitaxy with nanowire diameter controlled by the nanowire period (spacing between nanowires). This is the first such study of patterned InAsSb nanowires where control of nanowire diameter and multispectral absorption are demonstrated. The antimony flux was used to control axial and radial growth rates using a selective-area catalyst-free growth method, achieving large diameters, spanning 440–520 nm, which are necessary for optimum IR absorption. Fourier transform IR spectroscopy revealed IR absorptance peaks due to the HE11 resonance of the nanowire arrays in agreement with optical simulations. Due to the dependence of the HE11 resonance absorption on nanowire diameter, multispectral absorption was demonstrated in a single material system and a single epitaxial growth step without the need for bandgap tuning. This work demonstrates the potential of InAsSb nanowires for multispectral photodetectors and sensor arrays in the short-wavelength IR region.

  8. Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

    Science.gov (United States)

    Kruskopf, Mattias; Momeni Pakdehi, Davood; Pierz, Klaus; Wundrack, Stefan; Stosch, Rainer; Dziomba, Thorsten; Götz, Martin; Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph; Lidzba, Jakob; Seyller, Thomas; Hohls, Frank; Ahlers, Franz J.; Schumacher, Hans W.

    2016-12-01

    We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of deposited polymer adsorbate which acts as a carbon source. Unique to this method are the conservation of mainly 0.25 and 0.5 nm high surface steps and the formation of bilayer-free graphene on an area only limited by the size of the sample. This makes the polymer-assisted sublimation growth technique a promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K showing ultra-high precision and high electron mobility on mm scale devices comparable to state-of-the-art graphene.

  9. MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN

    Science.gov (United States)

    Matloubian, M.; Gershenzon, M.

    1985-09-01

    Ga begins to deposit from a stream of trimethylgallium (TMG) in H2 at a minimum temperature of 475‡C. Addition of sufficient amounts of NH2 results in the growth of textured polycrystalline GaN on basal plane sapphire substrates above 500‡C. A minimum temperature of 800‡C is required for the epitaxial growth of GaN on the substrate. Under similar conditions, but with the TMG replaced with trimethylaluminum (TMA), polycrystalline A1N begins forming at 400‡C (in the absence of NH3,, the TMA starts pyrolyzing at 300‡C), but single crystal growth of A1N requires a temperature of at least 1200‡C. Epitaxial single crystal layers of Alx Ga1-x N can be grown in the temperature range 800-1200‡C, tne minimum temperature being approximately proportional to x, but preferential deposition of A1N on the hot walls of the reactor (>400‡C) precludes precise control of the alloy composition. This predeposition of A1N can be retarded by keeping the walls below 400‡C by using a water-cooled jacket, by rapid flow-rates, or by injecting the TMA through a nozzle close to the surface of the substrate.

  10. Epitaxial growth of superconducting MgB2 thin films with a Mg buffer layer at 110 °C

    Science.gov (United States)

    Shishido, Hiroaki; Nakagami, Takatoshi; Yoshida, Takuya; Ishida, Takekazu

    2017-07-01

    Since the discovery of MgB2, its application to superconducting electronics has been limited by the absent of proper microfabrication techniques. In this study, we grew crystalline MgB2 thin films using molecular beam epitaxy at a low substrate temperature of 110 °C under ultra-high vacuum of about 10-6 Pa. MgB2 thin films were deposited with an epitaxial Mg buffer layer on c-plane 4H-SiC or sapphire substrates. In spite of the low growth temperature, superior crystallinity and surface flatness were confirmed by in situ reflection high-energy electron diffraction and X-ray diffraction measurements. Moreover, we successfully confirmed the occurrence of a sharp superconducting transition at 27 K. The present growth temperature was lower than any in prior reports on superconducting MgB2 thin films, and is lower than the applicable temperature of an organic-based lift-off resist. Our new MgB2 thin film growth process is promising for the development of an alternative nanofabrication technique for MgB2 thin films by means of a standard lift-off process with an organic resist.

  11. Epitaxial growth of multiwall carbon nanotube from stainless steel substrate and effect on electrical conduction and field emission

    Science.gov (United States)

    Zhu, Weiwei; Zhang, Yu; Xu, Ningsheng; Tan, Yuanming; Zhan, Runze; Shen, Yan; Xu, Zhi; Bai, Xuedong; Chen, Jun; She, Juncong; Deng, Shaozhi

    2017-07-01

    The epitaxial growth of carbon nanotubes (CNTs) is an important subject of research. Recent attention has been paid to finding new strategies for the controlled growth of single-wall CNTs with a defined chirality. In addition, many potential applications require multiwall CNTs (MWCNTs) to grow vertically from the substrate and the interface property is crucial. Here, we report for the first time that MWCNTs can grow directly from the surface of a substrate by epitaxy, based on the experimental study of individual multiwall carbon nanotubes on a large-area stainless steel substrate, which is a very useful system for electrical and mechanical applications. In particular, evidence is given of the lattice matching between the MWCNT and the lattice of a hexagonal Cr2O3: (Fe, Mn) film formed on the surface of the substrate. Furthermore, a method is developed to increase the density of the MWCNTs; a mechanism of simultaneous top and bottom growth is proposed. The resultant significantly improved electrical transport and field emission properties are also presented, showing the Ohmic contact for electrical conduction and high performance in resisting the catastrophic cold-cathode vacuum breakdown of the CNTs.

  12. Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Wang Yongjin

    2011-01-01

    Full Text Available Abstract We report here the epitaxial growth of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy (MBE. Various GaN gratings are defined by electron beam lithography and realized on GaN-on-silicon substrate by fast atom beam etching. Silicon substrate beneath GaN grating region is removed from the backside to form freestanding GaN gratings, and the patterned growth is subsequently performed on the prepared GaN template by MBE. The selective growth takes place with the assistance of nanoscale GaN gratings and depends on the grating period P and the grating width W. Importantly, coalescences between two side facets are realized to generate epitaxial gratings with triangular section. Thin epitaxial gratings produce the promising photoluminescence performance. This work provides a feasible way for further GaN-based integrated optics devices by a combination of GaN micromachining and epitaxial growth on a GaN-on-silicon substrate. PACS 81.05.Ea; 81.65.Cf; 81.15.Hi.

  13. Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Davis, R.F.; Zheleva, T.S. [North Carolina State Univ., Raleigh, NC (United States); Gehrke, T. [North Carolina State Univ., Raleigh, NC (United States); Nitronex Corp., Raleigh, NC (United States); Linthicum, K.J.; Rajagopal, P. [Nitronex Corp., Raleigh, NC (United States); Zorman, C.A.; Mehregany, M. [Case Western Reserve Univ., Cleveland, OH (United States)

    2001-02-01

    Monocrystalline GaN and Al{sub x}Ga{sub 1-x}N films have been grown via the pendeo-epitaxy (PE) technique with and without Si{sub 3}N{sub 4} masks on GaN/AlN/6H-SiC(0001) and GaN(0001)/AlN(0001)/3C-SiC(111)/Si(111) substrates using organometallic vapor phase deposition. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films were reduced at least five orders of magnitude relative to the initial GaN seed layers. Tilting to 0.2 in the portion of the coalesced GaN epilayers grown over the silicon nitride masks was observed via X-ray diffraction. Neither tilting nor low angle boundaries were observed within areas of coalescence in the material grown on substrates without the masks. (orig.)

  14. Pendeo-epitaxial growth and characterization of GaN and related materials on 6H-SiC(0001) and Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Davis, R.F.; Gehrke, T.; Linthicum, K.J.; Zheleva, T.S.; Rajagopal, P.; Zorman, C.A.; Mehregany, M.

    2000-07-01

    Discrete and coalesced monocrystalline GaN and Al{sub x}Ga{sub 1{minus}x}N layers grown via Pendeo-epitaxy (PE) [1] originated from side walls of GaN seed structures containing SiN{sub x} top masks have been grown via organometallic vapor phase deposition on GaN/AlN/6H-SiC(0001) and GaN(0001)/AlN(0001)/3C-SiC(111)/Si(111) substrates. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation densities in the PE grown films was reduced by at least five orders of magnitude relative to the initial GaN seed layers. Tilting in the coalesced GaN epilayers was observed via X-ray diffraction. A tilt of 0.2{degree} was confined to areas of mask overgrowth; however, no tilting was observed in the material suspended above the SiC substrate. The strong, low-temperature PL band-edge peak at 3.45 eV with a FWHM of 17 meV was comparable to that observed in PE GaN films grown on 6H-SiC(0001). The band-edge in the GaN grown on AlN(0001)/SiC(111)Si(111) substrates was shifted to a lower energy by 10 meV, indicative of a greater tensile stress.

  15. Growth of wurtzite InP/GaP core-shell nanowires by metal-organic molecular beam epitaxy

    Science.gov (United States)

    Halder, Nripendra N.; Kelrich, Alexander; Kauffmann, Yaron; Cohen, Shimon; Ritter, Dan

    2017-04-01

    We report on the selective area vapor-liquid-solid (SA-VLS) growth of InP/GaP core shell nano-wires (NWs) by metal organic molecular beam epitaxy. Wurtzite crystal structure of the core InP was transferred to the GaP shell through layer by layer radial growth which eliminated bending of the NWs in random directions. Low growth temperature restricted surface segregation and kept the shell free from indium. Strain in the GaP shell was partially relaxed through formation of periodic misfit dislocations. From the periodicity of Moiré fringes and splitting of the fast-Fourier-transform of the transmission electron micrographs, the radial and axial strain were determined as 4.5% and 6.2%, respectively.

  16. Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors

    Science.gov (United States)

    Wang, Denggui; Zhang, Xingwang; Liu, Heng; Meng, Junhua; Xia, Jing; Yin, Zhigang; Wang, Ye; You, Jingbi; Meng, Xiang-Min

    2017-09-01

    Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, the controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for the first time we demonstrate the epitaxial growth of high-quality HfS2 with a controlled number of layers on c-plane sapphire substrates by chemical vapor deposition (CVD). The HfS2 layers exhibit an atomically sharp interface with the sapphire substrate, followed by flat, 2D layers with octahedral coordination. The epitaxial relationship between HfS2 and substrate was determined by x-ray diffraction and transmission electron microscopy measurements to be: HfS2 (0 0 0 1) [10-10]||sapphire (0 0 0 1)[1-100]. Moreover, a high-performance photodetector with a high on/off ratio of more than 103 and an ultrafast response rate of 130 µs for the rise and 155 µs for the decay times were fabricated based on the CVD-grown HfS2 layers on sapphire substrates. This simple and controllable approach opens up a new way to produce highly crystalline HfS2 atomic layers, which are promising materials for nanoelectronics.

  17. In-situ epitaxial growth of heavily phosphorus doped SiGe by low pressure chemical vapor deposition

    CERN Document Server

    Lee, C J

    1998-01-01

    We have studied epitaxial crystal growth of Si sub 1 sub - sub x Ge sub x films on silicon substrates at 550 .deg. C by low pressure chemical vapor deposition. In a low PH sub 3 partial pressure region such as below 1.25x10 sup - sup 3 Pa, both the phosphorus and carrier concentrations increased with increasing PH sub 3 partial pressure, but the deposition rate and the Ge fraction remained constant. In a higher PH sub 3 partial pressure region, the deposition rate, the phosphorus concentration, and the carrier concentration decreased, while the Ge fraction increased. These suggest that high surface coverage of phosphorus suppresses both SiH sub 4 and GeH sub 4 adsorption/reactions on the surfaces, and its suppression effect on SiH sub 4 is actually much stronger than on GeH sub 4. In particular, epitaxial crystal growth is largely controlled by surface coverage effect of phosphorus in a higher PH sub 3 partial pressure region.

  18. Growth mechanism and electronic properties of epitaxial In{sub 2}O{sub 3} films on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ch. Y.; Kirste, L.; Roehlig, C. C.; Koehler, K.; Cimalla, V.; Ambacher, O. [Fraunhofer-Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Morales, F. M.; Manuel, J. M.; Garcia, R. [Departamento de Ciencia de los Materiales e Ingenieria Metalurgica y Quimica Inorganica, Facultad de Ciencias, Universidad de Cadiz, Puerto Real, Cadiz 11510 (Spain)

    2011-11-01

    In this work, we report on the epitaxial growth of high-quality cubic indium oxide thick films on c-plane sapphire substrates using a two-step growth process. The epitaxial relationship of In{sub 2}O{sub 3} on (0001) Al{sub 2}O{sub 3} has been investigated. The (222) plane spacing and lattice parameter of a most strain-relaxed high-quality In{sub 2}O{sub 3} film have been determined to be 292.58 pm and 1013.53 pm, respectively. The electronic properties in dependence of the film thickness are interpreted using a three-region model. The density at the surface and interface totals (3.3{+-}1.5)x10{sup 13}cm{sup -2}, while the background electron density in the bulk was determined to be (2.4{+-}0.5)x10{sup 18}cm{sup -3}. Furthermore, post treatments such as irradiation via ultraviolet light and ozone oxidation have been found to influence only the surface layer, while the bulk electronic properties remain unchanged.

  19. Epitaxial growth of delafossite CuFeO2 thin films by pulse laser deposition

    Science.gov (United States)

    Li, S. Z.; Liu, J.; Wang, X. Z.; Yan, B. W.; Li, H.; Liu, J.–M.

    2012-07-01

    CuFeO2 (CFO) is a delafossite-type compound and is a well known p-type semiconductor. Epitaxial CuFeO2 thin films were prepared on Al2O3 (0 0 0 1) substrates by pulsed laser deposition. The deposition, performed at 500 °C and 10 Pa leads to epitaxial phase with extremely low roughness and high density. The oxygen pressure modulates the band energy properties of Cu 2p, Fe 3p and O1s. The results show that the low deposition oxygen pressure contributes to the chemistry ingredient and magnetization properties. Furthermore, spin-glass behavior is identified and weak-ferromagnetization property is found at a low temperature about ∼5 K.

  20. Epitaxial growth of delafossite CuFeO{sub 2} thin films by pulse laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Li, S.Z. [School of Physics, Huangshi Institute of Technology, Huangshi 435003 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Liu, J. [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, X.Z [Department of Physics, Hubei Normal University, Huangshi 435000 (China); Yan, B.W.; Li, H. [School of Physics, Huangshi Institute of Technology, Huangshi 435003 (China); Liu, J.-M., E-mail: liujm@nju.edu.cn [Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China)

    2012-07-01

    CuFeO{sub 2} (CFO) is a delafossite-type compound and is a well known p-type semiconductor. Epitaxial CuFeO{sub 2} thin films were prepared on Al{sub 2}O{sub 3} (0 0 0 1) substrates by pulsed laser deposition. The deposition, performed at 500 Degree-Sign C and 10 Pa leads to epitaxial phase with extremely low roughness and high density. The oxygen pressure modulates the band energy properties of Cu 2p, Fe 3p and O1s. The results show that the low deposition oxygen pressure contributes to the chemistry ingredient and magnetization properties. Furthermore, spin-glass behavior is identified and weak-ferromagnetization property is found at a low temperature about {approx}5 K.

  1. Molecular-beam epitaxy growth and structural characterization of semiconductor-ferromagnet heterostructures by grazing incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Satapathy, D.K.

    2005-12-19

    The present work is devoted to the growth of the ferromagnetic metal MnAs on the semiconductor GaAs by molecular-beam epitaxy (MBE). The MnAs thin films are deposited on GaAs by molecular-beam epitaxy (MBE). Grazing incidence diffraction (GID) and reflection high-energy electron diffraction (RHEED) are used in situ to investigate the nucleation, evolution of strain, morphology and interfacial structure during the MBE growth. Four stages of the nucleation process during growth of MnAs on GaAs(001) are revealed by RHEED azimuthal scans. GID shows that further growth of MnAs films proceed via the formation of relaxed islands at a nominal thickness of 2.5 ML which increase in size and finally coalesce to form a continuous film. Early on, an ordered array of misfit dislocations forms at the interface releasing the misfit strain even before complete coalescence occurs. The fascinating complex nucleation process of MnAs on GaAs(0 0 1) contains elements of both Volmer-Weber and Stranski-Krastanov growth. A nonuniform strain amounting to 0.66%, along the [1 -1 0] direction and 0.54%, along the [1 1 0] direction is demonstrated from x-ray line profile analysis. A high correlation between the defects is found along the GaAs[1 1 0] direction. An extremely periodic array of misfit dislocations with a period of 4.95{+-}0.05 nm is formed at the interface along the [1 1 0] direction which releases the 7.5% of misfit. The inhomogeneous strain due to the periodic dislocations is confined at the interface within a layer of 1.6 nm thickness. The misfit along the [1 -1 0] direction is released by the formation of a coincidence site lattice. (orig.)

  2. Epitaxial growth of CuScO2 thin films on sapphire a-plane substrates by pulsed laser deposition

    Science.gov (United States)

    Kakehi, Yoshiharu; Satoh, Kazuo; Yotsuya, Tsutom; Nakao, Satoru; Yoshimura, Takeshi; Ashida, Atsushi; Fujimura, Norifumi

    2005-04-01

    An epitaxial film of CuScO2, a transparent oxide semiconductor with a delafossite structure, was grown on an α -Al2O3(112¯0) substrate by a pulsed laser deposition method using a single-phase Cu2Sc2Oδ target. A two-dimensional x-ray reciprocal space mapping measurement revealed that the film was single phase with a rhombohedral crystal structure. The film showed six-fold rotational symmetry in the basal plane, indicating that the film had a twinned domain structure. The epitaxial growth of CuScO2[3R](0001) thin films on α -Al2O3(112¯0) substrates is caused by the uniaxial locked epitaxy mechanism along the ⟨1¯21¯0⟩ direction of the film, and the orientation relationships of the film with respect to the substrate were CuScO2[3R](0001)//α-Al2O3(112¯0) and CuScO2[3R][1¯21¯0]//α-Al2O3[88¯01]. The optical transmittance of the film was larger than 65% in the visible/near-infrared regions, while the energy gap for direct allowed transition was estimated as 3.7 eV. The resistivity of the film, 9.3×106Ωcm at room temperature, significantly decreased to 4.0 Ωcm after both substituting Mg2+ ions for Sc3+ and intercalating excess oxygen. The Mg-doped CuScO2+X(0001) thin film showed optical transmittance of larger than 65% in the visible region, and the Seebeck coefficient was positive, indicating a p-type conductivity.

  3. Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition

    Science.gov (United States)

    Oshima, Takayoshi; Niwa, Mifuyu; Mukai, Akira; Nagami, Tomohito; Suyama, Toshihisa; Ohtomo, Akira

    2014-01-01

    ZnGa2O4 films were grown on (100) MgAl2O4 substrates by mist chemical vapor deposition. A growth window for obtaining single spinel phase was revealed by systematic variations of precursor Zn/Ga ratio and growth temperature, where the cation stoichiometry was maintained through sublimation of excess Zn species before crystalized into ZnO. The epitaxial relationship to the substrate was identified to be cube on cube with no rotation domain. The optical properties of the fully relaxed film were characterized by using cathodoluminescence (CL) and absorption spectroscopies. A large Stokes shift was found between the CL peak energy (3.4 eV) and fundamental absorption edge (4.6 eV), reflecting typical property of Ga-based wide-band-gap oxide semiconductors.

  4. Growth study of self-assembled GaN nanocolumns on silica glass by plasma assisted molecular beam epitaxy

    Science.gov (United States)

    Liudi Mulyo, Andreas; Konno, Yuta; Nilsen, Julie S.; van Helvoort, Antonius T. J.; Fimland, Bjørn-Ove; Weman, Helge; Kishino, Katsumi

    2017-12-01

    We demonstrate GaN nanocolumn growth on fused silica glass by plasma-assisted molecular beam epitaxy. The effect of the substrate temperature, Ga flux and N2 flow rate on the structural and optical properties are studied. At optimum growth conditions, GaN nanocolumns are vertically aligned and well separated with an average diameter, height and density of 72 nm, 1.2 μm and 1.6 × 109 cm-2, respectively. The nanocolumns exhibit wurtzite crystal structure with no threading dislocations, stacking faults or twinning and grow in the [0 0 0 1] direction. At the interface adjacent to the glass, there is a few atom layers thick intermediate phase with ABC stacking order (zinc blende). Photoluminescence measurements evidence intense and narrow excitonic emissions, along with the absence of any defect-related zinc blende and yellow luminescence emission.

  5. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

  6. Growth of Atomic Hexagonal Boron Nitride Layers and Graphene/Hexagonal Boron Nitride Heterostructures by Molecular Beam Epitaxy

    Science.gov (United States)

    Xu, Zhongguang

    Graphene, as a famous Van der Waals material, has attracted intensive attention from research group and industry all over the world after 2004, while hexagonal boron nitride (h-BN), as an excellent two-dimensional (2D) dielectric layer, has been studied intensively mainly for its compatibility with graphene and other 2D materials. To realize the technological potential of 2D system, it is essential to synthesize large-area, high-quality 2D thin films through a scalable and controllable method in order to investigate novel phenomenon in fundamental physics and promising device applications. In this thesis, the growth of graphene, h-BN and their vertical and lateral heterostructures by molecular beam epitaxy (MBE) is mainly discussed. In addition, the growth mechanism, fundamental physics and possible applications are also studied. In-situ epitaxial growth of graphene/h-BN heterostructures on cobalt (Co) film substrate was achieved by using plasma-assisted MBE in Chapter 2. We demonstrated a solution for direct fabricating graphene/h-BN vertical stacking structures. Various characterizations, such as Raman spectroscopy, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM), were carried out to confirm and evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°. Chapter 3 studied the growth of graphene/h-BN heterostructures on Co foil substrate by plasma-assisted MBE. It is found that the coverage of h-BN layers on the epitaxial thin graphite layer is growth-time dependent. Large-area, uniform-quality h-BN film was successfully deposited on thin graphite layer. Based on the as-grown h-BN (5-6 nm)/G (26-27 nm) heterostructure, without using any transferring process, we fabricated capacitor devices with Co(foil)/G/h-BN/Co(contact) configuration to evaluate the

  7. Growth of NaCl on thin epitaxial KCl films on Ag(100) studied by SPA-LEED

    Science.gov (United States)

    Marquardt, Christian; Paulheim, Alexander; Sokolowski, Moritz

    2015-11-01

    We investigated the growth of NaCl on thin (100)-oriented films of KCl by spot profile analysis of low energy electron diffraction (SPA-LEED). The underlying question of this investigation was how the system accommodates to the misfit of - 10% between the NaCl and KCl lattices. The KCl films (3 atomic layers thick) were epitaxially grown on a Ag(100) single crystal. We studied the heteroepitaxial growth of NaCl on KCl at 300 K and at 500 K, respectively. At 300 K, the first NaCl monolayer (ML) grows pseudomorphically on the KCl film. From the second layer onward, the NaCl lattice relaxes. The NaCl multilayers roughen, and a small rotational disorder (± 4°) of the NaCl domains is observed. The roughening results from the formation of multilayer islands of limited lateral size due to the misfit to the pseudomorphic first NaCl layer. At a growth temperature of 500 K, no pseudomorphic NaCl layer forms, instead relaxed multilayer island growth of NaCl is observed from the first layer onward. Similarly to the growth at 300 K, we find NaCl multilayer islands of limited lateral size. For both temperatures, we explain this growth behavior by the misfit that makes the adsorption sites at the island edges of the first relaxed NaCl layer less favorable for larger islands, promoting nucleation of multilayer islands.

  8. Epitaxial growth of ZnO Nanodisks with large exposed polar facets on nanowire arrays for promoting photoelectrochemical water splitting.

    Science.gov (United States)

    Chen, Haining; Wei, Zhanhua; Yan, Keyou; Bai, Yang; Zhu, Zonglong; Zhang, Teng; Yang, Shihe

    2014-11-01

    Single-crystalline and branched 1D arrays, ZnO nanowires/nanodisks (NWs/NDs) arrays, are fabricated to significantly enhance the performance of photoelectrochemical (PEC) water splitting. The epitaxial growth of the ZnO NDs with large exposed polar facets on ZnO NWs exhibits a laminated structure, which dramatically increases the light scattering capacity of the NWs arrays, especially in the wavelength region around 400 nm. The ND branching of the 1D arrays in the epitaxial fashion not only increase surface area and light utilization, but also support fast charge transport, leading to the considerable increase of photocurrent. Moreover, the tiny size NDs can facilitate charge separation and reduce charge recombination, while the large exposed polar facets of NDs reduce the external potential bias needed for water splitting. These advantages land the ZnO NWs/NDs arrays a four times higher power conversion efficiency than the ZnO NWs arrays. By sensitizing the ZnO NWs/NDs with CdS and CdSe quantum dots, the PEC performance can be further improved. This work advocates a trunk/leaf in forest concept for the single-crystalline NWs/NDs in array with enlarged exposure of polar facets, which opens the way for optimizing light harvesting and charge separation and transport, and thus the PEC water splitting. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Vapor-phase hydrothermal transformation of HTiOF3 intermediates into {001} faceted anatase single-crystalline nanosheets.

    Science.gov (United States)

    Liu, Porun; Wang, Yun; Zhang, Haimin; An, Taicheng; Yang, Huagui; Tang, Zhiyong; Cai, Weiping; Zhao, Huijun

    2012-12-07

    For the first time, a facile, one-pot hydrofluoric acid vapor-phase hydrothermal (HF-VPH) method is demonstrated to directly grow single-crystalline anatase TiO(2) nanosheets with 98.2% of exposed {001} faceted surfaces on the Ti substrate via a distinctive two-stage formation mechanism. The first stage produces a new intermediate crystal (orthorhombic HTiOF(3) ) that is transformed into anatase TiO(2) nanosheets during the second stage. The findings reveal that the HF-VPH reaction environment is unique and differs remarkably from that of liquid-phase hydrothermal processes. The uniqueness of the HF-VPH conditions can be readily used to effectively control the nanostructure growth. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

    DEFF Research Database (Denmark)

    Vincent, B.; Gencarelli, F.; Bender, H.

    2011-01-01

    In this letter, we propose an atmospheric pressure-chemical vapor deposition technique to grow metastable GeSn epitaxial layers on Ge. We report the growth of defect free fully strained undoped and in-situ B doped GeSn layers on Ge substrates with Sit contents up to 8%. Those metastable layers stay...

  11. DEVELOPMENT OF AN AIR-TO-LEAF VAPOR PHASE TRANSFER FACTOR FOR DIOXINS AND FURANS

    Science.gov (United States)

    Results of an experiment in which grass was grown in a greenhouse and outdoors, and in soils of different concentration levels of dioxins and furans, were used in a modeling exercise to derive an air-to-leaf vapor phase transfer factor. The purpose of the experiment was to under...

  12. Development of vapor phase hydrogenation and of catalysts immune to poison (abstract)

    Energy Technology Data Exchange (ETDEWEB)

    1942-10-16

    The development of catalysts immune to poison and the development of vapor-phase hydrogenation were closely connected and they were considered together. Catalysts used at high thruputs and high partial pressures showed rapid deterioration of their activity caused by deposition and condensation of high-molecular-weight substances on the surface of the catalysts. This phenomenon made it necessary to divide hydrogenation into two phases: the liquid phase and the vapor phase. The first of the vapor-phase operating catalysts was catalyst 3510, which consisted of zinc--magnesium molybdate. Development of catalyst 5058, which consisted of pure tungsten disulfide and was produced by decomposing ammonium--sulfotungstate in H/sub 2/ atmosphere, largely terminated development of vapor-phase catalysts. Maximum activity had been obtained. Compared to 3510, two to three times as much gasoline was produced per hour with a fixed volume of catalyst, besides being able to work at a temperature about 100/sup 0/C lower, and gasification losses were considerably smaller. In order to use 5058 in mass production, the dry catalyst powder had to be compressed into cylindrical shapes 10 mm in diameter. The demands for higher antiknock gasolines in the processing of certain paraffinic raw material could not be met by 5058 because of its strong hydrogenation effect, and the dilute catalyst 6434, consisting of 90% Fullers earth treated with HF and 10% WS/sub 2/, was developed for this. 3 tables.

  13. Improved thermal lattice Boltzmann model for simulation of liquid-vapor phase change

    Science.gov (United States)

    Li, Qing; Zhou, P.; Yan, H. J.

    2017-12-01

    In this paper, an improved thermal lattice Boltzmann (LB) model is proposed for simulating liquid-vapor phase change, which is aimed at improving an existing thermal LB model for liquid-vapor phase change [S. Gong and P. Cheng, Int. J. Heat Mass Transfer 55, 4923 (2012), 10.1016/j.ijheatmasstransfer.2012.04.037]. First, we emphasize that the replacement of ∇ .(λ ∇ T ) /∇.(λ ∇ T ) ρ cV ρ cV with ∇ .(χ ∇ T ) is an inappropriate treatment for diffuse interface modeling of liquid-vapor phase change. Furthermore, the error terms ∂t 0(T v ) +∇ .(T vv ) , which exist in the macroscopic temperature equation recovered from the previous model, are eliminated in the present model through a way that is consistent with the philosophy of the LB method. Moreover, the discrete effect of the source term is also eliminated in the present model. Numerical simulations are performed for droplet evaporation and bubble nucleation to validate the capability of the model for simulating liquid-vapor phase change. It is shown that the numerical results of the improved model agree well with those of a finite-difference scheme. Meanwhile, it is found that the replacement of ∇ .(λ ∇ T ) /∇ .(λ ∇ T ) ρ cV ρ cV with ∇ .(χ ∇ T ) leads to significant numerical errors and the error terms in the recovered macroscopic temperature equation also result in considerable errors.

  14. Catalyst-free III-nitride Nanowires by Plasma-assisted Molecular Beam Epitaxy: Growth, Characterization, and Applications

    Science.gov (United States)

    Carnevale, Santino D.

    In the past twenty years, III-nitride devices have had an enormous impact on semiconductor-based technologies. This impact is seen in both optoelectronic and electronic devices. The aim of this dissertation is to take advantage of III-nitride nanowires grown by plasma-assisted molecular beam epitaxy to form heterostructures that are difficult or impossible to achieve in traditional, thin films. To do this, it is first necessary to establish the growth phase diagrams that correlate the characteristics of GaN nanowires to MBE growth conditions. By using the information in these growth maps we can control growth kinetics and the resulting nanowire structures by making strategic, timely changes to growth conditions. Using this control electronic and optoelectronic III-nitride nanowire devices are created. First, coaxially-oriented AlN/GaN nanowire resonant tunneling diodes are formed on Si substrates. Second, polarization-induced nanowire light emitting diodes (PINLEDs) are fabricated that exhibit electroluminescence at wavelengths from the deep UV into the visible. Because these PINLEDs utilize polarization doping, they can be formed with and without the use of dopants. Device and structural characterization are provided, including a detailed investigation of the mixed material polarity in these nanowires. Finally, the dissertation closes with a discussion of recent work and future ideas for optimizing the PINLED design.

  15. Insight into the epitaxial growth of high optical quality GaAs1-xBix

    Science.gov (United States)

    Beaton, D. A.; Mascarenhas, A.; Alberi, K.

    2015-12-01

    The ternary alloy GaAs1-xBix is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs1-xBix epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., InyGa1-yAs. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. The improved optical quality now opens up possibilities for the practical use of GaAs1-xBix in optoelectronic devices.

  16. Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Kuang-Wei [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Young, Sheng-Joue, E-mail: shengjoueyoung@gmail.com [Department of Electronic Engineering, National Formosa University, Huwei, Yunlin 632, Taiwan (China); Chang, Shoou-Jinn, E-mail: changsj@mail.ncku.edu.tw [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Hsueh, Tao-Hung [Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan (China); Hung, Hung; Chen, Shi-Xiang [Institute of Microelectronics and Department of Electrical Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan (China); Chen, Yue-Zhang [Institute of Nanotechnology and Microsystems Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2012-01-15

    Highlights: > This study grew GaN epilayers on Si(1 1 1) substrate by molecular beam epitaxy with CrN interlayer fabricated through nitridation process. > The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN prevented Si atoms diffusing into the GaN epilayer, thereby reducing the concentration of electrons. > Photoluminescence spectra indicated that DAP emission was not generated in the GaN with a CrN interlayer, due to improved crystalline quality, and a reduction in the concentration of electrons. - Abstract: This study grew GaN epilayers on Si(1 1 1) substrate via molecular beam epitaxy, with a CrN interlayer fabricated through a nitridation process. The X-ray diffraction results showed two peaks corresponding to CrN(1 1 1) and GaN(0 0 0 2). The results of auger electron spectroscopy showed that the concentration of electrons was relatively low in the samples grown with a CrN interlayer, due to CrN preventing Si atoms from diffusing into the GaN epilayer, thereby reducing electron concentration. Photoluminescence spectra indicated that donor-accepter pair recombination (DAP) emission was not generated in the GaN with a CrN interlayer because of improved crystalline quality and a reduction in electron concentration.

  17. Epitaxial growth of unusual 4H hexagonal Ir, Rh, Os, Ru and Cu nanostructures on 4H Au nanoribbons

    KAUST Repository

    Fan, Zhanxi

    2016-09-12

    Metal nanomaterials normally adopt the same crystal structure as their bulk counterparts. Herein, for the first time, the unusual 4H hexagonal Ir, Rh, Os, Ru and Cu nanostructures have been synthesized on 4H Au nanoribbons (NRBs) via solution-phase epitaxial growth under ambient conditions. Interestingly, the 4H Au NRBs undergo partial phase transformation from 4H to face-centered cubic (fcc) structures after the metal coating. As a result, a series of polytypic 4H/fcc bimetallic Au@M (M = Ir, Rh, Os, Ru and Cu) core-shell NRBs has been obtained. We believe that the rational crystal structure-controlled synthesis of metal nanomaterials will bring new opportunities for exploring their phase-dependent physicochemical properties and promising applications.

  18. Effects of growth temperature and device structure on GaP solar cells grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Vaisman, M.; Tomasulo, S.; Masuda, T.; Lang, J. R.; Faucher, J.; Lee, M. L. [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06511 (United States)

    2015-02-09

    Gallium phosphide (GaP) is an attractive candidate for wide-bandgap solar cell applications, possessing the largest bandgap of the III-arsenide/phosphides without aluminum. However, GaP cells to date have exhibited poor internal quantum efficiency (IQE), even for photons absorbed by direct transitions, motivating improvements in material quality and device structure. In this work, we investigated GaP solar cells grown by molecular beam epitaxy over a range of substrate temperatures, employing a much thinner emitter than in prior work. Higher growth temperatures yielded the best solar cell characteristics, indicative of increased diffusion lengths. Furthermore, the inclusion of an AlGaP window layer improved both open-circuit voltage and short wavelength IQE.

  19. Epitaxial growth of Sc-doped ZnO films on Si by sol-gel route

    Science.gov (United States)

    Sharma, Ruchika; Sehrawat, Kiran; Wakahara, Akihiro; Mehra, R. M.

    2009-03-01

    The epitaxial growth of doped ZnO films is of great technological importance. Present paper reports a detailed investigation of Sc-doped ZnO films grown on (1 0 0) silicon p-type substrates. The films were deposited by sol-gel technique using zinc acetate dihydrate as precursor, 2-methoxyethanol as solvent and monoethanolamine (MEA) as a stabilizer. Scandium was introduced as dopant in the solution by taking 0.5 wt% of scandium nitrate hexahydrate. The effect of annealing on structural and photoluminescence properties of nano-textured Sc-doped films was investigated in the temperature range of 300-550 °C. Structural investigations were carried out using X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray diffraction study revealed that highly c-axis oriented films with full-width half maximum of 0.21° are obtained at an annealing temperature of 400 °C. The SEM images of ZnO:Sc films have revealed that coalescence of ZnO grains occurs due to annealing. Ostwald ripening was found to be the dominant mass transport mechanism in the coalescence process. A surface roughness of 4.7 nm and packing density of 0.93 were observed for the films annealed at 400 °C. Room temperature photoluminescence (PL) measurements of ZnO:Sc films annealed at 400 °C showed ultraviolet peak at about (382 nm) with FWHM of 141 meV, which are comparable to those found in high-quality ZnO films. The films annealed below or above 400 °C exhibited green emission as well. The presence of green emission has been correlated with the structural changes due to annealing. Reflection high energy electron diffraction pattern confirmed the nearly epitaxial growth of the films. Ruchika Sharma, P. K. Shishodia, A. Wakahara and R. M. Mehra, Materials Science-Poland 27 (2009) Ist issue.

  20. Au-assisted growth of anisotropic and epitaxial cdse colloidal nanocrystals via in situ dismantling of quantum dots

    KAUST Repository

    Fernàndez-Altable, Víctor

    2015-03-10

    Metallic nanocrystals have been revealed in the past years as valuable materials for the catalytic growth of semiconductor nanowires. Yet, only low melting point metals like Bi have been reported to successfully assist the growth of elongated CdX (X = S, Se, Te) systems in solution, and the possibility to use plasmonic noble metals has become a challenging task. In this work we show that the growth of anisotropic CdSe nanostructures in solution can also be efficiently catalyzed by colloidal Au nanoparticles, following a preferential crystallographic alignment between the metallic and semiconductor domains. Noteworthy, we report the heterodox use of semiconductor quantum dots as a homogeneous and tunable source of reactive monomer species to the solution. The mechanistic studies reveal that the in situ delivery of these cadmium and chalcogen monomer species and the formation of AuxCdy alloy seeds are both key factors for the epitaxial growth of elongated CdSe domains. The implementation of this method suggests an alternative synthetic approach for the assembly of different semiconductor domains into more complex heterostructures.

  1. Epitaxial growth and electronic structure of oxyhydride SrVO{sub 2}H thin films

    Energy Technology Data Exchange (ETDEWEB)

    Katayama, Tsukasa; Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Yamada, Keisuke; Onozuka, Tomoya [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Shigematsu, Kei [Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan); Minohara, Makoto; Kumigashira, Hiroshi [Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Ikenaga, Eiji [Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Mikazuki-cho, Hyogo 679-5198 (Japan); Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology, Kawasaki, Kanagawa 213-0012 (Japan)

    2016-08-28

    Oxyhydride SrVO{sub 2}H epitaxial thin films were fabricated on SrTiO{sub 3} substrates via topotactic hydridation of oxide SrVO{sub 3} films using CaH{sub 2}. Structural and composition analyses suggested that the SrVO{sub 2}H film possessed one-dimensionally ordered V-H{sup −}-V bonds along the out-of-plane direction. The synthesis temperature could be lowered by reducing the film thickness, and the SrVO{sub 2}H film was reversible to SrVO{sub 3} by oxidation through annealing in air. Photoemission and X-ray absorption spectroscopy measurements revealed the V{sup 3+} valence state in the SrVO{sub 2}H film, indicating that the hydrogen existed as hydride. Furthermore, the electronic density of states was highly suppressed at the Fermi energy, consistent with the prediction that tetragonal distortion induces metal to insulation transition.

  2. Growth of epitaxial Pb(Zr,Ti)O3 films by pulsed laser deposition

    Science.gov (United States)

    Lee, J.; Safari, A.; Pfeffer, R. L.

    1992-10-01

    Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary have been grown on MgO (100) and Y1Ba2Cu3Ox (YBCO) coated MgO substrates. Substrate temperature and oxygen pressure were varied to achieve ferroelectric films with a perovskite structure. Films grown on MgO had the perovskite structure with an epitaxial relationship with the MgO substrate. On the other hand, films grown on the YBCO/MgO substrate had an oriented structure to the surface normal with a misorientation in the plane parallel to the surface. The measured dielectric constant and loss tangent at 1 kHz were 670 and 0.05, respectively. The remnant polarization and coercive field were 42 μC/cm2 and 53 kV/cm. A large internal bias field (12 kV/cm) was observed in the as-deposited state of the undoped PZT films.

  3. Low Cost, Epitaxial Growth of II-VI Materials for Multijunction Photovoltaic Cells

    Energy Technology Data Exchange (ETDEWEB)

    Hardin, Brian E. [PLANT PV, Inc., Oakland, CA (United States); Peters, Craig H. [PLANT PV, Inc., Oakland, CA (United States)

    2014-04-30

    Multijunction solar cells have theoretical power conversion efficiencies in excess of 29% under one sun illumination and could become a highly disruptive technology if fabricated using low cost processing techniques to epitaxially grow defect tolerant, thin films on silicon. The PLANT PV/Molecular Foundry team studied the feasibility of using cadmium selenide (CdSe) as the wide band-gap, top cell and Si as the bottom cell in monolithically integrated tandem architecture. The greatest challenge in developing tandem solar cells is depositing wide band gap semiconductors that are both highly doped and have minority carrier lifetimes greater than 1 ns. The proposed research was to determine whether it is possible to rapidly grow CdSe films with sufficient minority carrier lifetimes and doping levels required to produce an open-circuit voltage (Voc) greater than 1.1V using close-space sublimation (CSS).

  4. Growth by molecular beam epitaxy and characterization of Al(x)Ga(1-x)N alloys and heterostructures

    Science.gov (United States)

    Korakakis, Dimitris

    Research in semiconductors has recently been focusing on III-V nitrides due to their potential optoelectronic applications in the visible and ultraviolet. This thesis studies AlsbxGasb1-xN thin films and heterostructures grown by molecular beam epitaxy over the entire alloy composition. The study addresses heteroepitaxial growth onto a variety of substrates (sapphire and 6H-SiC), n- and p-type doping, film structure and optoelectronic properties. Reflection high energy electron diffraction and atomic force microscopy were used to probe the early stages of epitaxial growth. Techniques were developed for the growth of AlsbxGasb1-xN films directly on 6H-SiC without a buffer layer. The as-grown films had no cubic domains and the dislocation density close to the interface was 2 x 10sp9 cmsp{-2}. The initial stages of growth on sapphire were found to have a pronounced effect on the films' optoelectronic properties. X-ray diffraction was used to study issues related to strain, long range atomic ordering and superlattice effects. For the first time, kinetic conditions were identified for the growth of ordered AlsbxGasb1-xN films over the entire alloy composition. Superlattice structures of AlsbxGasb1-xN/GaN were grown and characterized. X-ray diffraction studies on off-axis peaks showed that the superlattices were strained but coherent. Furthermore, the in-plane lattice parameters of the superlattices assumed the in-plane lattice constant of the underlying bulk film. The diffraction pattern of on-axis peaks indicated that the interfaces of the structures were abrupt. The optoelectronic properties of the AlsbxGasb1-xN films grown were investigated. Photoluminescence and transmission experiments showed that the bandgap of these materials varied linearly with the c-lattice parameter. The films were doped n- and p-type with Si and Mg respectively. The donor activation energy was found to increase with Al concentration while the electron mobility decreased as the AlN mole

  5. EDITORIAL: Epitaxial graphene Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    nanostructured without patterning the graphene itself. This method produces graphene nanostructures with atomically smooth edges that ultimately determine the transport properties of these structures. The coherent collection of papers in this special issue of Journal of Physics D: Applied Physics provides a snapshot of the current state of the art, presented by leading experts, highlighting various aspects of the science and technology of epitaxial graphene. This collection systematically addresses the production of epitaxial graphene on the two polar faces of silicon carbide, as well as the structural and electronic properties of the graphene films. Special attention is paid to the rapidly emerging field of chemically modified graphene, which promises to introduce a bandgap into the electronic structure of graphene, which is critical for many electronic applications. Also presented are methods to incorporate properties of the silicon carbide itself, as well as advanced methods to produce high-quality graphene and graphene nanostructures using structured growth methods.

  6. Pendeo-epitaxial growth of GaN on SiC and silicon substrates via metalorganic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Linthicum, K.J.; Gehrke, T.; Thomson, D.; Ronning, C.; Carlson, E.P.; Zorman, C.A.; Mehregany, M.; Davis, R.F.

    1999-07-01

    Pendeo-epitaxial lateral growth (PE) of GaN epilayers on (0001) 6H-silicon carbide and (111) Si substrates has been achieved. Growth on the latter substrate was accomplished through the use of a 3C-SiC transition layer. The coalesced PE GaN epilayers were characterized using scanning electron diffraction, x-ray diffraction and photoluminescence spectroscopy. The regions of lateral growth exhibited {approximately} 0.2{degree} crystallographic tilt relative to the seed layer. The GaN seed and PE epilayers grown on the 3C-SiC/Si substrates exhibited comparable optical characteristics to the GaN seed and PE grown on 6H-SiC substrates. The near band-edge emission of the GaN/3C-SiC/Si seed was 3.450 eV (FWHM {approximately} 19 meV) and the GaN/6H-SiC seed was 3.466 eV (FWHM {approximately} 4 meV).

  7. Growth of defect-free GaAsSbN axial nanowires via self-catalyzed molecular beam epitaxy

    Science.gov (United States)

    Sharma, Manish; Deshmukh, Prithviraj; Kasanaboina, Pavan; Reynolds, C. Lewis, Jr.; Liu, Yang; Iyer, Shanthi

    2017-12-01

    Bandgap reduction of 10% by incorporation of a dilute amount of N is reported for the first time, in axial GaAsSb nanowires (NWs) grown on Si (111) via Ga-assisted molecular beam epitaxy. Impact of N incorporation on the surface morphology, NW growth kinetics, and their structural and optical properties were examined. Dilute nitride NWs with Sb composition of 7 at% did not exhibit any noticeable planar defects, as revealed by the absence of satellite twin peaks in the selected-area diffraction pattern and high-resolution transmission electron microscopy imaging. Point defects were also minimal in as-grown dilute nitride NWs, as ascertained from the comparison of low-temperature photoluminescence spectra as well as the shape and shift of Raman modes, with in situ annealed NWs in different ambients. Evidence of enhanced incorporation of N was found in the NWs in situ annealed in N ambient, but with deteriorated optical quality due to simultaneous creation of N-induced defects. The lack of any noticeable defects in the as-grown GaAsSbN NWs demonstrates the advantage of the vapor–liquid–solid mechanism responsible for growth of axial configuration over the vapor–solid growth mechanism for core–shell NWs as well as their thin film counterpart, which commonly exhibit N-induced point defects.

  8. Interfacial Misfit Array Technique for GaSb Growth on GaAs (001) Substrate by Molecular Beam Epitaxy

    Science.gov (United States)

    Benyahia, D.; Kubiszyn, Ł.; Michalczewski, K.; Kębłowski, A.; Martyniuk, P.; Piotrowski, J.; Rogalski, A.

    2018-01-01

    Undoped GaSb epilayers, deposited at low growth temperature (440°C), have been grown on GaAs (001) substrate with 2° offcut towards [110], by a molecular beam epitaxy system. Interfacial misfit array (IMF) growth mode has been used in order to impede the propagation of the threading dislocations through the GaSb epilayer. Under optimized growth parameters, both transmission electron microscopy (TEM) measurements and high-resolution x-ray diffraction (HRXRD) revealed the presence of a periodic array of pure 90° edge dislocations along [110]. Furthermore, HRXRD shows a full width at half maximum of a 2- μm-thick GaSb epilayer peak as low as 195 arcsec. In addition, the GaSb layer is found to be 99.8% relaxed, with a residual strain of 1.4 × 10-4. Moreover, based on TEM measurements, the dislocations spacing or the period of the IMF was found to be 5-5.2 nm.

  9. Effects of surface reconstruction on the epitaxial growth of III-Sb on GaAs using interfacial misfit array

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Bo Wen, E-mail: jiab0001@e.ntu.edu.sg; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

    2017-03-31

    Highlights: • Low-defected GaSb and InSb were grown on GaAs by MBE using interfacial misfit dislocations. • X-ray reciprocal space mapping can be used to characterize misfit dislocations at the III-Sb/GaAs interface. • Uniform interfacial misfit dislocation array were observed by TEM and x-ray RSM. • (2 × 8) pre-growth Sb reconstruction promoted the formation of 90° misfit dislocations at the III-Sb/GaAs interface. • The electron mobility in GaSb and InSb layers on GaAs can be enhanced through optimizing pre-growth Sb reconstruction. - Abstract: The effects of pre-growth Sb reconstruction on a GaAs surface on the epitaxial growth of III-Sb (GaSb and InSb) on a (100) GaAs substrate using interfacial misfit array were investigated. All samples exhibited smooth surface with a root mean square (r.m.s.) roughness below 1.5 nm and nearly 100% relaxation. Modeling indicated that the distribution and types of misfit dislocations can be evaluated using a reciprocal space map (RSM) of the x-ray measurements. The interfacial misfit (IMF) arrays in III-Sb/GaAs samples were characterized by RSMs of high-resolution x-ray diffraction (XRD) and transmission electron microscopy (TEM). The RSM results suggest that all samples exhibited highly uniformly distributed misfit dislocations, and pre-growth (2 × 8) Sb surface reconstruction promoted the formation of 90° dislocations in an IMF array. Hall measurements of unintentionally doped GaSb and InSb layers also suggested that the highest motilities at both 77 K and 300 K were achieved at the samples grown on GaAs with pre-growth (2 × 8) Sb reconstruction.

  10. Van der Waals Epitaxial Growth of Atomic Layered HfS2Crystals for Ultrasensitive Near-Infrared Phototransistors.

    Science.gov (United States)

    Fu, Lei; Wang, Feng; Wu, Bin; Wu, Nian; Huang, Wei; Wang, Hanlin; Jin, Chuanhong; Zhuang, Lin; He, Jun; Fu, Lei; Liu, Yunqi

    2017-08-01

    As a member of the group IVB transition metal dichalcogenides (TMDs) family, hafnium disulfide (HfS 2 ) is recently predicted to exhibit higher carrier mobility and higher tunneling current density than group VIB (Mo and W) TMDs. However, the synthesis of high-quality HfS 2 crystals, sparsely reported, has greatly hindered the development of this new field. Here, a facile strategy for controlled synthesis of high-quality atomic layered HfS 2 crystals by van der Waals epitaxy is reported. Density functional theory calculations are applied to elucidate the systematic epitaxial growth process of the S-edge and Hf-edge. Impressively, the HfS 2 back-gate field-effect transistors display a competitive mobility of 7.6 cm 2 V -1 s -1 and an ultrahigh on/off ratio exceeding 10 8 . Meanwhile, ultrasensitive near-infrared phototransistors based on the HfS 2 crystals (indirect bandgap ≈1.45 eV) exhibit an ultrahigh responsivity exceeding 3.08 × 10 5 A W -1 , which is 10 9 -fold higher than 9 × 10 -5 A W -1 obtained from the multilayer MoS 2 in near-infrared photodetection. Moreover, an ultrahigh photogain exceeding 4.72 × 10 5 and an ultrahigh detectivity exceeding 4.01 × 10 12 Jones, superior to the vast majority of the reported 2D-materials-based phototransistors, imply a great promise in TMD-based 2D electronic and optoelectronic applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Direct epitaxial growth of SrTiO{sub 3} on Si (001): Interface, crystallization and IR evidence of phase transition

    Energy Technology Data Exchange (ETDEWEB)

    Niu, G. [Institut des Nanotechnologies de Lyon (INL), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully (France); Peng, W.W. [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette (France); Saint-Girons, G.; Penuelas, J. [Institut des Nanotechnologies de Lyon (INL), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully (France); Roy, P.; Brubach, J.B. [Synchrotron SOLEIL, L' Orme des Merisiers, Saint-Aubin, BP 48, 91192 Gif-sur-Yvette (France); Maurice, J-L. [Unite Mixte de Physique CNRS/Thales Associee a l' Universite Paris Sud, Campus de Polytechnique, 1 Avenue A. Fresnel, 91767 Palaiseau (France); Hollinger, G. [Institut des Nanotechnologies de Lyon (INL), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully (France); Vilquin, B., E-mail: m.gooley@elsevier.com [Institut des Nanotechnologies de Lyon (INL), Ecole Centrale de Lyon, 36 Avenue Guy de Collongue, 69134 Ecully (France)

    2011-06-30

    The work reports the direct epitaxial growth of SrTiO{sub 3} on Si (001) substrate by molecular beam epitaxy. The impact of the growth temperature and the initial oxygen partial pressure on the heteroepitaxy is studied in detail using different in-situ and ex-situ characterization methods. The optimal growth condition has been identified as 360 deg. C with the initial oxygen partial pressure of 5 x 10{sup -8} Torr to achieve a high-quality single crystalline SrTiO{sub 3} film and a coherent interface between SrTiO{sub 3} and Si. The THz Infrared (IR) measurements show that the biaxial strained SrTiO{sub 3} commensurately grown on silicon undergoes a cubic-tetragonal phase transition.

  12. Growth of Ga- and N-polar GaN layers on O face ZnO substrates by molecular beam epitaxy

    Science.gov (United States)

    Xia, Y.; Brault, J.; Vennéguès, P.; Nemoz, M.; Teisseire, M.; Leroux, M.; Chauveau, J.-M.

    2014-02-01

    Gallium nitride (GaN) epitaxial layers have been grown on O face (0001bar) zinc oxide (ZnO) substrates by ammonia source molecular beam epitaxy. By adjusting the growth temperature and the III/V ratio during the nucleation stage, GaN layers with Ga (0001) or N (0001bar) polarities have been obtained. We show that low growth temperatures (600 °C) and N-rich conditions lead to N-polar layers. Furthermore, the formation of a zinc gallate (ZnGa2O4) interfacial layer between GaN and ZnO has been evidenced, which is responsible for the growth of Ga-polar GaN layers. The structural and optical properties of Ga- and N-polar GaN layers have been characterized and Ga-polar GaN layers exhibit higher crystal quality.

  13. Epitaxial growth of znO nanowires over the ZnO thin films deposited on the Si and sapphire substrates.

    Science.gov (United States)

    Park, No-Kuk; Lee, You Jin; Jung, Ji Young; Lee, Won Guen; Bae, Young Je; Yoon, Suk Hoon; Han, Gi Bo; Ryu, Si Ok; Lee, Tae Jin

    2008-09-01

    Epitaxial growth of ZnO nanowires was carried out using a modified thermal evaporation method with inexpensive experimental setup. ZnO nanowires were synthesized using ZnO thin films. The ZnO thin films were deposited as a buffer layer on silicon and sapphire using an impinging flow reactor (IFR). The IFR system is a modified version of a chemical bath deposition (CBD). Films can be created at low temperature, without any metallic catalysts. The properties of Zinc Oxide films are dependant upon the type of substrate used. The same deposition process with a different substrates yields two films with different properties. The most critical effect on growth of ZnO nanowires were dependent the properties of the buffer layer deposited on the substrate. It was not the type of substrate used. A cost-efficient method for epitaxial growth of single crystal ZnO nanowires is proposed in this work.

  14. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs

    Energy Technology Data Exchange (ETDEWEB)

    Tsatsulnikov, A. F., E-mail: andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Yagovkina, M. A.; Ustinov, V. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Cherkashin, N. A. [CEMES–CNRS—Université de Toulouse (France)

    2016-09-15

    The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 × 2', 3 × 2', and 6 × 2' is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.

  15. Compact Raman Lidar Measurement of Liquid and Vapor Phase Water Under the Influence of Ionizing Radiation

    Directory of Open Access Journals (Sweden)

    Shiina Tatsuo

    2016-01-01

    Full Text Available A compact Raman lidar has been developed for studying phase changes of water in the atmosphere under the influence of ionization radiation. The Raman lidar is operated at the wavelength of 349 nm and backscattered Raman signals of liquid and vapor phase water are detected at 396 and 400 nm, respectively. Alpha particles emitted from 241Am of 9 MBq ionize air molecules in a scattering chamber, and the resulting ions lead to the formation of liquid water droplets. From the analysis of Raman signal intensities, it has been found that the increase in the liquid water Raman channel is approximately 3 times as much as the decrease in the vapor phase water Raman channel, which is consistent with the theoretical prediction based on the Raman cross-sections. In addition, the radius of the water droplet is estimated to be 0.2 μm.

  16. In situ, subsurface monitoring of vapor-phase TCE using fiber optics

    Energy Technology Data Exchange (ETDEWEB)

    Rossabi, J. [Westinghouse Savannah River Co., Aiken, SC (United States); Colston, B. Jr.; Brown, S.; Milanovich, F. [Lawrence Livermore National Lab., CA (United States); Lee, L.T. Jr. [Army Engineer Waterways Experiment Station, Vicksburg, MS (United States). Geotechnical Lab.

    1993-03-05

    A vapor-phase, reagent-based, fiber optic trichloroethylene (TCE) sensor developed by Lawrence Livermore National Laboratory (LLNL) was demonstrated at the Savannah River Site (SRS) in two configurations. The first incorporated the sensor into a down-well instrument bounded by two inflatable packers capable of sealing an area for discrete depth analysis. The second involved an integration of the sensor into the probe tip of the Army Corps of Engineers Waterways Experiment Station (WES) cone penetrometry system. Discrete depth measurements of vapor-phase concentrations of TCE in the vadose zone were successfully made using both configurations. These measurements demonstrate the first successful in situ sensing (as opposed to sampling) of TCE at a field site.

  17. Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy

    Science.gov (United States)

    Yu, Fengmei; Ren, Lizhu; Meng, Meng; Wang, Yunjia; Yang, Mei; Wu, Shuxiang; Li, Shuwei

    2014-04-01

    Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn3.6Cu0.4N have been grown in the case of Cu-doping, and the pure Mn3N2 single crystal has been obtained without Cu-doping. The Mn3.6Cu0.4N exhibits ferrimagnetism, and the magnetization of Mn3.6Cu0.4N increases upon the temperature decreasing from 300 K to 5 K, similar to Mn4N. The exchange bias (EB) effects emerge in the Mn3.6Cu0.4N films. The EB behavior is originated from the interfaces between ferrimagnetic Mn3.6Cu0.4N and antiferromagnetic metal Mn, which is verified to be formed by the data of x-ray photoelectron spectroscopy. The present results not only provide a strategy for producing functional antiperovskite manganese nitrides, but also shed promising light on fabricating the exchange bias part of spintronic devices.

  18. Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Fengmei, E-mail: yufengmei401@126.com [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Automation College, Zhongkai University of Agriculture and Engineering, Guangzhou 510225 (China); Ren, Lizhu; Meng, Meng; Wang, Yunjia; Yang, Mei; Wu, Shuxiang; Li, Shuwei, E-mail: stslsw@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)

    2014-04-07

    Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn{sub 3.6}Cu{sub 0.4}N have been grown in the case of Cu-doping, and the pure Mn{sub 3}N{sub 2} single crystal has been obtained without Cu-doping. The Mn{sub 3.6}Cu{sub 0.4}N exhibits ferrimagnetism, and the magnetization of Mn{sub 3.6}Cu{sub 0.4}N increases upon the temperature decreasing from 300 K to 5 K, similar to Mn{sub 4}N. The exchange bias (EB) effects emerge in the Mn{sub 3.6}Cu{sub 0.4}N films. The EB behavior is originated from the interfaces between ferrimagnetic Mn{sub 3.6}Cu{sub 0.4}N and antiferromagnetic metal Mn, which is verified to be formed by the data of x-ray photoelectron spectroscopy. The present results not only provide a strategy for producing functional antiperovskite manganese nitrides, but also shed promising light on fabricating the exchange bias part of spintronic devices.

  19. Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Bessolov, V.N. [Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021 (Russian Federation); Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, V.O., Bolshoj pr., 61, St. Petersburg, 199178 (Russian Federation); Karpov, D.V. [St. Petersburg Academic University - Nanotechnology Research and Education Centre of the Russian Academy of Sciences (Academic University), Khlopina 8/3, St Petersburg, 194021 (Russian Federation); University of Eastern Finland, P.O. Box 111, Joensuu, 80101 (Finland); Konenkova, E.V. [Ioffe Physical Technical Institute, Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg, 194021 (Russian Federation); Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, V.O., Bolshoj pr., 61, St. Petersburg, 199178 (Russian Federation); Lipovskii, A.A. [St. Petersburg Academic University - Nanotechnology Research and Education Centre of the Russian Academy of Sciences (Academic University), Khlopina 8/3, St Petersburg, 194021 (Russian Federation); Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg, 195251 (Russian Federation); Osipov, A.V. [Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, V.O., Bolshoj pr., 61, St. Petersburg, 199178 (Russian Federation); St. Petersburg National Research University of Information Technologies, Mechanics and Optics, Kronverkskii pr. 49, St. Petersburg, 197101 (Russian Federation); Redkov, A.V. [Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, V.O., Bolshoj pr., 61, St. Petersburg, 199178 (Russian Federation); St. Petersburg Academic University - Nanotechnology Research and Education Centre of the Russian Academy of Sciences (Academic University), Khlopina 8/3, St Petersburg, 194021 (Russian Federation); Peter the Great St. Petersburg Polytechnic University, Politekhnicheskaya 29, St. Petersburg, 195251 (Russian Federation); and others

    2016-05-01

    A new approach to the pendeo-epitaxy of elastically-unstrained AlN films is developed. The AlN films are grown using chloride-hydride vapor phase epitaxy (HVPE) on a silicon substrate with specially synthesized and shaped buffer layer of nano-SiC (NSiC). This NSiC epitaxial layer is grown using a new technique based on the substitution of a part of silicon atoms by carbon ones in a 100–110 nm thick subsurface layer of the silicon substrate. The 2D array of ~ 200 nm in diameter wells with the depth of ~ 70 nm that is less than the NSiC layer thickness is formed on the NSiC surface using electron beam lithography followed by reactive ion etching, the period of the array is of 400 nm. In a single HVPE process we grew ~ 20 μm thick AlN film both on the shaped and smooth regions of the prepared substrate. The AlN films are examined with reflection high energy electron diffraction, X-ray diffractometry, Raman spectroscopy and scanning electron microscopy. We use the results of these measurements to compare residual elastic stresses in the AlN film grown on the shaped and smooth regions of the substrate. The film on the shaped part of the substrate is elastically-unstrained contrary to the smooth part where elastic stresses result in the formation of a textured AlN layer. The model of the AlN growth on shaped SiC/Si substrates prepared using the atomic substitution technique is proposed. - Highlights: • A new method for chloride-hydride vapor phase pendeo-epitaxy of AlN is proposed • Unstrained AlN layer is grown on a Si substrate with a nanoprofiled SiC buffer • SiC made by substitution of atoms is well suited for the growth of AlN • Dissolution of pores in silicon beneath the nano-SiC is revealed.

  20. Epitaxial growth of BaTiO3/ZnO heterojunctions and transition from rectification to bipolar resistive switching effect

    Science.gov (United States)

    Jia, Caihong; Yin, Xiaoqian; Yang, Guang; Wu, Yonghui; Li, Jiachen; Chen, Yonghai; Zhang, Weifeng

    2017-09-01

    Epitaxial BaTiO3/ZnO heterojunctions have been grown on a-plane Al2O3 by pulsed laser deposition. The out-of-plane and in-plane epitaxial relationships of BTO/ZnO/Al2O3 are determined to be (100)BTO//(0002)ZnO//(11 2 ¯ 0)Al2O3 and [011]BTO//[2 1 ¯ 1 ¯ 0]ZnO//[0001]Al2O3, respectively. A three-domain-epitaxy growth mode was found to coexist in BaTiO3 films, while ZnO was a single domain epitaxially grown on a-Al2O3. A rectification effect was observed for the BTO films grown at high laser energies of 450 and 320 mJ, while bipolar resistive switching was found for those BTO films grown at low laser energies of 280 and 200 mJ. The transition from the rectification effect to the bipolar resistive switching effect can be understood by the variance of interface state density.

  1. B12P2: Improved epitaxial growth and evaluation of a irradiation on its electrical transport properties

    Science.gov (United States)

    Frye, Clint D.

    The wide bandgap (3.35 eV) semiconductor icosahedral boron phosphide (B12P2) has been reported to self-heal from radiation damage from ? particles (electrons) with energies up to 400 keV by demonstrating no lattice damage using transmission electron microscopy. This property could be exploited to create radioisotope batteries-semiconductor devices that directly convert the decay energy from a radioisotope to electricity. Such devices potentially have enormous power densities and decades-long lifetimes. To date, the radiation hardness of B12P2 has not been characterized by electrical measurements nor have B12P2 radioisotope batteries been realized. Therefore, this study was undertaken to evaluate the radiation hardness of B12P2 after improving its epitaxial growth, developing ohmic electrical contacts, and reducing the residual impurities. Subsequently, the effects of radiation from a radioisotope on the electrical transport properties of B12P2 were tested. B12P2 was grown epitaxially on 4H-SiC by chemical vapor deposition (CVD) over the temperature range of 1250-1450 °C using B2H6 and PH3 precursor gases in a H 2 carrier gas. The epitaxial relationship between B12P 2 and 4HSiC was (0001)B12P2[1?100]B12P 2 ||(0001)4H-SiC[1?100]4H-SiC using hexagonal indices (or (111)B 12P2[1?21]B12P2 ||(0001)4H-SiC[1?100]4H-SiC using rhombohedral indices for B12P2). X-ray diffraction (XRD) rocking curve measurements (assessing the crystal quality) about the B12P2 (0003) peak were minimized at 1300 °C indicating it was the optimum growth temperature studied. By miscutting the (0001) 4H-SiC substrate 4° to the (1100) plane, B12P 2 rotational twinning, a type of crystal defect, was strongly suppressed to a twin density of metal. With the new substrate and susceptor, the Si and C concentrations were decreased to 2-3x1018 cm -3 and 4x1018 cm-3, respectively. The radiation hardness of p-B12P 2 grown on AlN/sapphire was compared to an epi-layer of p-4H-SiC (a conventional radiation hard

  2. Foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires on Si (111) by molecular-beam epitaxy

    Science.gov (United States)

    So, Hyok; Pan, Dong; Li, Lixia; Zhao, Jianhua

    2017-03-01

    Epitaxial high-quality InAs/InSb axial heterostructure nanowires are of great interest due to their distinct advantages in fundamental research as well as applications in semiconductor electronic and quantum devices. Currently, nearly all the growth of InAs/InSb axial heterostructure nanowires is assisted with foreign catalysts such as Au, and work on foreign-catalyst-free growth of InAs/InSb axial heterostructure nanowires is lacking. Here we report on the growth of InAs/InSb axial heterostructure nanowires on Si (111) substrates by molecular-beam epitaxy without using any foreign catalysts. The Sb/In beam equivalent pressure (BEP) ratio is found to have important influence on the heterostructure nanowire morphology, and InSb nanowires can be epitaxially grown on InAs nanowire stems with a hexagonal prism and nanosheet-like shapes when the Sb/In BEP ratio varies from 10 to 20. Transmission electron microscopy studies reveal that the InAs nanowire stems have a mixture of zincblende (ZB) and wurtzite (WZ) crystal structures, while InSb nanowire parts have a pure ZB crystal structure free of stacking faults. Composition analysis of axial heterostructure nanowires provides clear evidence that the InSb nanowires are epitaxially grown on InAs nanowires in an In self-assisted vapor-liquid-solid manner. This study paves a new route for growing narrow-gap semiconductor heterostructures with strong spin-orbit interaction for the study of topological states, and the growth manner presented here is expected to be used to grow other In-based axial heterostructure nanowires.

  3. Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

    Science.gov (United States)

    Li, Qiang; Lai, Billy; Lau, Kei May

    2017-10-01

    We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

  4. A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides.

    Science.gov (United States)

    Nie, Yifan; Liang, Chaoping; Cha, Pil-Ryung; Colombo, Luigi; Wallace, Robert M; Cho, Kyeongjae

    2017-06-07

    Controlled growth of crystalline solids is critical for device applications, and atomistic modeling methods have been developed for bulk crystalline solids. Kinetic Monte Carlo (KMC) simulation method provides detailed atomic scale processes during a solid growth over realistic time scales, but its application to the growth modeling of van der Waals (vdW) heterostructures has not yet been developed. Specifically, the growth of single-layered transition metal dichalcogenides (TMDs) is currently facing tremendous challenges, and a detailed understanding based on KMC simulations would provide critical guidance to enable controlled growth of vdW heterostructures. In this work, a KMC simulation method is developed for the growth modeling on the vdW epitaxy of TMDs. The KMC method has introduced full material parameters for TMDs in bottom-up synthesis: metal and chalcogen adsorption/desorption/diffusion on substrate and grown TMD surface, TMD stacking sequence, chalcogen/metal ratio, flake edge diffusion and vacancy diffusion. The KMC processes result in multiple kinetic behaviors associated with various growth behaviors observed in experiments. Different phenomena observed during vdW epitaxy process are analysed in terms of complex competitions among multiple kinetic processes. The KMC method is used in the investigation and prediction of growth mechanisms, which provide qualitative suggestions to guide experimental study.

  5. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    Science.gov (United States)

    You, Shuo-Ting; Lo, Ikai; Tsai, Jenn-Kai; Shih, Cheng-Hung

    2015-12-01

    We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ¯ 0 ) by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

  6. Epitaxial growth of M-plane GaN on ZnO micro-rods by plasma-assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    Shuo-Ting You

    2015-12-01

    Full Text Available We have studied the GaN grown on ZnO micro-rods by plasma-assisted molecular beam epitaxy. From the analyses of GaN microstructure grown on non-polar M-plane ZnO surface ( 10 1 ̄ 0 by scanning transmission electron microscope, we found that the ZnGa2O4 compound was formed at the M-plane hetero-interface, which was confirmed by polarization-dependent photoluminescence. We demonstrated that the M-plane ZnO micro-rod surface can be used as an alternative substrate to grow high quality M-plane GaN epi-layers.

  7. Soft epitaxy of nanocrystal superlattices

    National Research Council Canada - National Science Library

    Rupich, Sara M; Castro, Fernando C; Irvine, William T M; Talapin, Dmitri V

    2014-01-01

    .... NC epitaxy reveals an exceptional strain tolerance. It follows a universal island size scaling behaviour and shows a strain-driven transition from layer-by-layer to Stranski-Krastanov growth with non-trivial island height statistics...

  8. Epitaxial growth of 2 inch diameter homogeneous AlN single-crystalline films by pulsed laser deposition

    Science.gov (United States)

    Yang, Hui; Wang, Wenliang; Liu, Zuolian; Li, Guoqiang

    2013-03-01

    2 inch diameter homogeneous AlN films are epitaxially grown on sapphire substrates by pulsed laser deposition (PLD). By optimizing laser rastering and PLD growth conditions, the 2 inch diameter single-crystalline AlN films exhibit excellent thickness uniformity with root-mean-square (RMS) inhomogeneity less than 4.5% and very smooth surface with RMS roughness less than 1.53 nm. There is a maximum of 1.5 nm thick interfacial layer, if there is any, existing between the as-grown AlN and the pre-nitrided sapphire substrate, and the as-grown AlN films are almost fully relaxed only with a 0.26% in-plane compressive strain. The achievement of high-quality large-scale AlN films with uniform thickness and atomically abrupt interface is of great interest for the commercial development of AlN-based devices, particularly acoustic filters where abrupt heterointerfaces with substrates and flat surfaces for AlN films are highly desired.

  9. Van der Waals Epitaxial Growth of 2D Metallic Vanadium Diselenide Single Crystals and their Extra-High Electrical Conductivity.

    Science.gov (United States)

    Zhang, Zhepeng; Niu, Jingjing; Yang, Pengfei; Gong, Yue; Ji, Qingqing; Shi, Jianping; Fang, Qiyi; Jiang, Shaolong; Li, He; Zhou, Xiebo; Gu, Lin; Wu, Xiaosong; Zhang, Yanfeng

    2017-10-01

    2D metallic transition-metal dichalcogenides (MTMDs) have recently emerged as a new class of materials for the engineering of novel electronic phases, 2D superconductors, magnets, as well as novel electronic applications. However, the mechanical exfoliation route is predominantly used to obtain such metallic 2D flakes, but the batch production remains challenging. Herein, the van der Waals epitaxial growth of monocrystalline, 1T-phase, few-layer metallic VSe 2 nanosheets on an atomically flat mica substrate via a "one-step" chemical vapor deposition method is reported. The thickness of the VSe 2 nanosheets is precisely tuned from several nanometers to several tenths of nanometers. More significantly, the 2D VSe 2 single crystals are found to present an excellent metallic feature, as evidenced by the extra-high electrical conductivity of up to 10 6 S m -1 , 1-4 orders of magnitude higher than that of various conductive 2D materials. The thickness-dependent charge-density-wave phase transitions are also examined through low-temperature transport measurements, which reveal that the synthesized 2D metallic 1T-VSe 2 nanosheets should serve as good research platforms for the detecting novel many-body states. These results open a new path for the synthesis and property investigations of nanoscale-thickness 2D MTMDs crystals. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Dislocation dynamics and surface coarsening of rippled states in the epitaxial growth and erosion on (110) crystal surfaces.

    Science.gov (United States)

    Golubović, Leonardo; Levandovsky, Artem

    2008-05-01

    Rippled one-dimensionally periodic structures are commonly seen in the experimental studies of the epitaxial growth and erosion on low symmetry rectangular (110) crystal surfaces. Rippled states period (wavelength) and amplitude grow via a coarsening process that involves motion and annihilations of the dislocations disordering perfect periodicity of these structures. Unlike the ordinary dislocations in equilibrium systems, the dislocations of the growing rippled states are genuinely traveling objects, never at rest. Here, we theoretically elucidate the structure and dynamics of these far-from-equilibrium topological defects. We derive fundamental dislocation dynamics laws that relate the dislocation velocity to the rippled state period. Next, we use our dislocations velocity laws to derive the coarsening laws for the temporal evolution of the rippled state period lambda and the ripple amplitude w (surface roughness). For the simple rippled states on (110) surfaces, we obtain the coarsening law lambda approximately w approximately t{2/7} . Under some circumstances however, we find that these states may exhibit a faster coarsening with lambda approximately w approximately t{1/3} . We also discuss the dislocations in the rectangular rippled surface states for which we derive the coarsening law with lambda approximately w approximately t{1/4} . The coarsening laws that occur at the transition from the rippled to the rhomboidal pyramid state are also discussed, as well as the crossover effects that occur in rippled states in the proximity of this transition on (110) crystal surfaces.

  11. Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Yang, H. F.; Liu, Z. T.; Fan, C. C.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050 (China); Yao, Q. [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050 (China); State Key Laboratory of Surface Physics, Department of Physics, and Advanced Materials Laboratory, Fudan University, Shanghai 200433 (China); Shen, D. W., E-mail: dwshen@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050 (China); CAS Center for Excellence in Superconducting Eletronics (CENSE), Shanghai 200050 (China); CAS-Shanghai Science Research Center, Shanghai 201203 (China)

    2016-08-15

    By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO{sub 3} thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO{sub 3} and iso-polarity LaAlO{sub 3} substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO{sub 3} (111) substrate was more suitable than Nb-doped SrTiO{sub 3}. In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO{sub 3} based superlattices.

  12. Epitaxial growth and properties of cubic group III-nitride layers

    Science.gov (United States)

    Schikora, D.; Schoettger, B.; As, Donat J.; Lischka, K.

    1997-06-01

    Single-phase cubic GaN and InN layers are grown by plasma assisted MBE. The temperature-dependence of the surface reconstruction is elaborated. The structural stability of the cubic growth in dependence of the growth stoichiometry is studied by RHEED measurements and numerical simulations of the experimental RHEED patterns. Growth oscillations on cubic GaN and during the growth of GaN-InN single quantum wells are recorded at nearly stoichiometric adatom coverage. Photoluminescence reveals the dominant optical transitions of cubic GaN and InN. Using in-situ RHEED to control the surface stoichiometry it is possible to grow N-stabilized layers resulting in intrinsic p-type GaN epilayers with hole concentrations of about p equals 1 X 1013 cm-3 and mobilities of about (mu) p equals 320 cm2/Vs, respectively.

  13. InGaN nanocolumn growth self-induced by in-situ annealing and ion irradiation during growth process with molecular beam epitaxy method

    Science.gov (United States)

    Xue, Junjun; Cai, Qing; Zhang, Baohua; Ge, Mei; Chen, Dunjun; Zheng, Jianguo; Zhi, Ting; Tao, Zhikuo; Chen, Jiangwei; Wang, Lianhui; Zhang, Rong; Zheng, Youdou

    2017-11-01

    Incubation and shape transition are considered as two essential processes for nucleating of self-assembly InGaN nanocolumns (NCs) in traditional way. We propose a new approach for nuclei forming directly by in-situ annealing and ion irradiating the InGaN template during growing process. The nanoislands, considered as the nuclei of NCs, were formed by a combinational effect of thermal and ion etching (TIE), which made the gaps of the V-pits deeper and wider. On account of the decomposition of InGaN during TIE process, more nitride-rich amorphous alloys would intent to accumulate in the corroded V-pits. The amorphous alloys played a key role to promote the following growth from 2D regime into Volmer-Weber growth regime so that the NC morphology took place, rather than a compact film. As growth continued, the subsequently epitaxial InGaN alloys on the annealed NC nuclei were suffered in biaxial compressive stress for losing part of indium content from the NC nuclei during the TIE process. Strain relaxation, accompanied by thread dislocations, came up and made the lattice planes misoriented, which prevented the NCs from coalescence into a compact film at later period of growing.

  14. Metalorganic chemical vapor growth and characterizations of epitaxial magnesium zinc oxide films on R-aluminum oxide substrates

    Science.gov (United States)

    Muthukumar, Sriram

    Wide energy bandgap semiconductor materials are of considerable interest for their use in short-wavelength light emitting diodes and lasers. ZnO has a direct energy bandgap of ˜3.3eV at room temperature. Its direct energy bandgap can be extended to ˜4.0eV by alloying it with MgO to form Mg xZn1-xO (0 ≤ x ≤ 0.33). Such materials are essential for the fabrication of ZnO/MgxZn1-xO heterostructures for energy band engineering. In this work, MgxZn1-x O thin films are epitaxially grown on (011¯2) R-Al2O 3 (sapphire) substrates by metalorganic chemical vapor deposition. A thin ZnO buffer layer of the order of 50A is found to be critical for the growth of single crystal MgxZn1-xO (0 ≤ x ≤ 0.33) films with a wurtzite-type structure. For Mg mole fractions of x > 0.5, the MgxZn1-xO films grow epitaxially with a cubic rocksalt-type structure. The epitaxial relationship between the wurtzite-type MgxZn1-xO films and the R-Al 2O3 substrates is determined to be (112¯0) Mgx Zn1-xO||(011¯2) Al2O3, and [0001] MgxZn1-xO||[01¯11] Al 2O3. The films appear to be dense and have a smooth surface morphology. The x-ray Deltapi(112¯0) rocking curve and Delta2θ(112¯0) full-width half maximum for Mg0.18Zn0.82O film are measured to be 0.275° and 0.175°, respectively, indicating a strong mosaicity and built in strain in the films. In-plane reflections show the lower lattice mismatch along the c-axis of the MgxZn1-xO films on R-Al2O3. High-Resolution Transmission Electron Microscopy analysis of the Mg0.3Zn0.7O/R-Al2O3 interface indicates the region in the film near the interface is crystalline though strained, and the film starts to relax farther away from the interface. The compressive in-plane residual strain in the MgxZn1-x O film, due to Mg incorporation, was calculated using moire fringes near the interface to be on the order of -0.36%. The energy bandgap of MgxZn1-xO films as a function of Mg composition is deduced using a UV-Visible spectrophotometer at room temperature

  15. Laser-induced fluorescence analysis of plasmas for epitaxial growth of YBiO3 films with pulsed laser deposition

    National Research Council Canada - National Science Library

    Orsel, K; Groenen, Rik; Bastiaens, Hubertus M.J; Koster, Gertjan; Rijnders, Augustinus J.H.M; Boller, Klaus J

    2016-01-01

    ... the influence of oxygen present in the background gas during pulsed laser deposition to the oxidation of plasma species as well as the formation of epitaxial YBiO 3 films. With spatiotemporal LIF mapping of ...

  16. Epitaxial graphene

    OpenAIRE

    de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gerard

    2007-01-01

    Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and l...

  17. Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

    DEFF Research Database (Denmark)

    Chen, Yunzhong; Pryds, Nini; Schou, Jørgen

    ), to the growth of dense, gas impermeable 10 mol% gadolinia-doped ceria (CGO10) solid electrolyte can be overcome by the seeding process. In order to evaluate the seed layer preparation, the effects of different thermal annealing treatments on the morphology, microstructure and surface roughness of ultrathin CGO...... the preparation of ultrathin seed layers in the first stage of the deposition process is often envisaged to control the growth and physical properties of the subsequent coating. This work suggests that the limitations of conventional pulsed laser deposition (PLD), performed at moderate temperature (400°C...

  18. Growth and characterization of germanium epitaxial film on silicon (001 with germane precursor in metal organic chemical vapour deposition (MOCVD chamber

    Directory of Open Access Journals (Sweden)

    Kwang Hong Lee

    2013-09-01

    Full Text Available The quality of germanium (Ge epitaxial film grown directly on a silicon (Si (001 substrate with 6° off-cut using conventional germane precursor in a metal organic chemical vapour deposition (MOCVD system is studied. The growth sequence consists of several steps at low temperature (LT at 400 °C, intermediate temperature ramp (LT-HT of ∼10 °C/min and high temperature (HT at 600 °C. This is followed by post-growth annealing in hydrogen at temperature ranging from 650 to 825 °C. The Ge epitaxial film of thickness ∼ 1 μm experiences thermally induced tensile strain of 0.11 % with a treading dislocation density (TDD of ∼107/cm2 and the root-mean-square (RMS roughness of ∼ 0.75 nm. The benefit of growing Ge epitaxial film using MOCVD is that the subsequent III-V materials can be grown in-situ without the need of breaking the vacuum hence it is manufacturing worthy.

  19. Real-time growth study of plasma assisted atomic layer epitaxy of InN films by synchrotron x-ray methods

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Anderson, Virginia R. [American Society for Engineering Education, 1818 N Street NW, Washington, DC 20036; Johnson, Scooter D. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Downey, Brian P. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; Meyer, David J. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375; DeMasi, Alexander [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Robinson, Zachary R. [Department of Physics, SUNY College at Brockport, 350 New Campus Dr, Brockport, New York 14420; Ludwig, Karl F. [Physics Department, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215; Eddy, Charles R. [U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375

    2017-03-13

    The temporal evolution of high quality indium nitride (InN) growth by plasma-assisted atomic layer epitaxy (ALEp) on a-plane sapphire at 200 and 248 °C was probed by synchrotron x-ray methods. The growth was carried out in a thin film growth facility installed at beamline X21 of the National Synchrotron Light Source at Brookhaven National Laboratory and at beamline G3 of the Cornell High Energy Synchrotron Source, Cornell University. Measurements of grazing incidence small angle x-ray scattering (GISAXS) during the initial cycles of growth revealed a broadening and scattering near the diffuse specular rod and the development of scattering intensities due to half unit cell thick nucleation islands in the Yoneda wing with correlation length scale of 7.1 and 8.2 nm, at growth temperatures (Tg) of 200 and 248 °C, respectively. At about 1.1 nm (two unit cells) of growth thickness nucleation islands coarsen, grow, and the intensity of correlated scattering peak increased at the correlation length scale of 8.0 and 8.7 nm for Tg = 200 and 248 °C, respectively. The correlated peaks at both growth temperatures can be fitted with a single peak Lorentzian function, which support single mode growth. Post-growth in situ x-ray reflectivity measurements indicate a growth rate of ~0.36 Å/cycle consistent with the growth rate previously reported for self-limited InN growth in a commercial ALEp reactor. Consistent with the in situ GISAXS study, ex situ atomic force microscopy power spectral density measurements also indicate single mode growth. Electrical characterization of the resulting film revealed an electron mobility of 50 cm2/V s for a 5.6 nm thick InN film on a-plane sapphire, which is higher than the previously reported mobility of much thicker InN films grown at higher temperature by molecular beam epitaxy directly on sapphire. These early results indicated that in situ synchrotron x-ray study of the epitaxial growth kinetics of InN films is a very powerful method to

  20. Vapor Phase Self-assembled Monolayers for Anti-stiction Applications in MEMS

    DEFF Research Database (Denmark)

    Zhuang, Yanxin; Hansen, Ole; Knieling, Thomas

    2007-01-01

    We have investigated the anti-stiction performance of self-assembled monolayers (SAMs) that were grown in vapor phase from six different organosilane precursors: CF3(CF2)5(CH2)2SiCl3 (FOTS), CF3(CF2)5(CH2)2Si(OC2H5)3 (FOTES), CF3(CF2)5(CH2)2Si(CH3)Cl2 (FOMDS), CF3(CF2)5(CH2)2Si(CH3)2Cl (FOMMS), CF3...

  1. High flux diode packaging using passive microscale liquid-vapor phase change

    Science.gov (United States)

    Bandhauer, Todd; Deri, Robert J.; Elmer, John W.; Kotovsky, Jack; Patra, Susant

    2017-09-19

    A laser diode package includes a heat pipe having a fluid chamber enclosed in part by a heat exchange wall for containing a fluid. Wicking channels in the fluid chamber is adapted to wick a liquid phase of the fluid from a condensing section of the heat pipe to an evaporating section of the heat exchanger, and a laser diode is connected to the heat exchange wall at the evaporating section of the heat exchanger so that heat produced by the laser diode is removed isothermally from the evaporating section to the condensing section by a liquid-to-vapor phase change of the fluid.

  2. Thermodynamics of acetone sorption from vapor phase by Keplerate and toroid polyoxomolybdate nanoclusters

    Science.gov (United States)

    Ostroushko, A. A.; Adamova, L. V.; Eremina, E. V.; Grzhegorzhevskii, K. V.; Velichko, E. V.; Bogdanov, S. G.; Pirogov, A. N.

    2017-07-01

    The sorption of acetone from the vapor phase by Keplerate polyoxomolybdate (POM) nanoclusters, Mo132 and Mo72Fe30, and Mo138, a POM with a toroid structure, is studied via equilibrium interval sorption (a modification of vapor sorption gravimetry). The highest sorption capacity is registered for Mo132, while the other two show performance an order of magnitude lower. The specific Gibbs energy of the interaction between the POMs and acetone is reported. Small-angle X-ray and neutron scattering analysis indicates a considerable difference between the natures of Mo132 and Mo138 surfaces.

  3. Calculation of Liquid Water-Hydrate-Methane Vapor Phase Equilibria from Molecular Simulations

    DEFF Research Database (Denmark)

    Jensen, Lars; Thomsen, Kaj; von Solms, Nicolas

    2010-01-01

    Monte Carlo simulation methods for determining fluid- and crystal-phase chemical potentials are used for the first time to calculate liquid water-methane hydrate-methane vapor phase equilibria from knowledge of atomistic interaction potentials alone. The water and methane molecules are modeled...... potential of the zero-occupancy hydrate system using thermodynamic integration from an Einstein crystal reference state, and (iii) thermodynamic integration to obtain the water and guest molecules' chemical potentials as a function of the hydrate occupancy. The three-phase equilibrium curve is calculated...... value at corresponding conditions. While computationally intensive, simulations such as these are essential to map the thermodynamically stable conditions for hydrate systems....

  4. Vapor Phase Sensing Using Metal Nanorod Thin Films Grown by Cryogenic Oblique Angle Deposition

    Directory of Open Access Journals (Sweden)

    Piyush Shah

    2013-01-01

    Full Text Available We demonstrate the chemical sensing capability of silver nanostructured films grown by cryogenic oblique angle deposition (OAD. For comparison, the films are grown side by side at cryogenic (~100 K and at room temperature (~300 K by e-beam evaporation. Based on the observed structural differences, it was hypothesized that the cryogenic OAD silver films should show an increased surface enhanced Raman scattering (SERS sensitivity. COMSOL simulation results are presented to validate this hypothesis. Experimental SERS results of 4-aminobenzenethiol (4-ABT Raman test probe molecules in vapor phase show good agreement with the simulation and indicate promising SERS applications for these nanostructured thin films.

  5. Flux growth and liquid-phase epitaxy of $Mn{6+}$-doped barium sulfate

    NARCIS (Netherlands)

    Ehrentraut, D.; Shim, K. B.; Romanyuk, Y.E.; Pollnau, Markus

    2004-01-01

    We investigated the conditions for the growth of $Mn^{6+}$-doped from the ternary eutectic NaCl-KCl-CsCl solvent at temperatures of 480-600 $^{o}$C. The doping complex ion $MnO^{2-}_{4}$ can easily substitute the $SO^{2-}_{4}$ complex ion in $BaSO_{4}$ with its orthorhombic space group Pnma. The

  6. Growth and Carrier Transport Studies of III-Nitride Alloys by Ammonia Molecular Beam Epitaxy

    Science.gov (United States)

    Browne, David Alan

    The III-Nitride alloys span the entire visible spectrum and offer applications to LEDs, lasers, solar cells and power electronics. A detailed understanding of heterojunction growth is required for achieving high performance devices especially due to the large lattice mismatch in this alloy system. The wurtzite crystal system also lacks an inversion center which provides a polarization-induced electric field along the c direction that can be exploited in device design or reduced by growth on other substrate orientations. We present results on the growth of InGaN films by Ammonia MBE on polar gallium nitride substrates as well as on nonpolar and semipolar orientations. We show results from coloaded growth conditions and investigate the effect of substrate temperature, growth rate, and ammonia flow on indium incorporation and impurity uptake. We then present solar cell results from a high indium uptake semipolar orientation with fields in a favorable direction for a p-i-n device. We also investigate and understand the effect of relaxation via basal plane slip and unintentional impurity incorporation on device performance. Results are then be presented on electron transport through c plane InGaN/GaN multiple quantum well (MQW) active regions grown by NH3 MBE which have direct relevance to transport in MQW solar cells and LEDs. The presence of indium fluctuations in InGaN has been suspected and debated in the literature for some time, but there is still much that is not well understood. We present Atom Probe Tomography (APT) analysis of the quantum wells to explicitly examine the magnitude and length scale of these observed local alloy fluctuations. The discrepancy in current-voltage behavior between experiment and modeling using traditional 1D simulation software will be discussed. A 2D/3D drift-diffusion Schrodinger-Poisson solver developed by collaborators was used to input alloy fluctuation parameters to elucidate their direct effect on barrier heights and on

  7. Reduction of threading dislocation density in SiGe epilayer on Si (0 0 1) by lateral growth liquid-phase epitaxy

    Science.gov (United States)

    O'Reilly, Andrew J.; Quitoriano, Nathaniel J.

    2018-02-01

    Si0.973Ge0.027 epilayers were grown on a Si (0 0 1) substrate by a lateral liquid-phase epitaxy (LLPE) technique. The lateral growth mechanism favoured the glide of misfit dislocations and inhibited the nucleation of new dislocations by maintaining the thickness less than the critical thicknesses for dislocation nucleation and greater than the critical thickness for glide. This promoted the formation of an array of long misfit dislocations parallel to the [1 1 0] growth direction and reduced the threading dislocation density to 103 cm-2, two orders of magnitude lower than the seed area with an isotropic misfit dislocation network.

  8. A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire

    Science.gov (United States)

    Ravadgar, P.; Horng, R. H.; Ou, S. L.

    2012-12-01

    A clear visualization of the origin and characteristics of threading dislocations (TDs) of GaN-based light emitting diode epitaxial layers on (0001) sapphire substrates have been carried out. Special experimental set up and chemical etchant along with field emission scanning electron microscopy are employed to study the dynamics of GaN TDs at different growth stages. Cross-sectional transmission electron microscopy analysis visualized the formation of edge TDs is arising from extension of coalescences at boundaries of different tilting-twining nucleation grains "mosaic growth." Etch pits as representatives of edge TDs are in agreement with previous theoretical models and analyses of TDs core position and characteristics.

  9. Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, D.G., E-mail: dgzhao@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Jiang, D.S.; Wu, L.L.; Le, L.C.; Li, L.; Chen, P.; Liu, Z.S. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Zhu, J.J.; Wang, H.; Zhang, S.M. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Yang, H. [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China); Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125 (China)

    2012-12-15

    Highlights: Black-Right-Pointing-Pointer A dual AlN buffer layer structure is proposed to grow AlN films. Black-Right-Pointing-Pointer AlN films could be improved obviously by using the dual AlN buffer layer. Black-Right-Pointing-Pointer The physical mechanism are discussed. - Abstract: A dual AlN buffer layer structure, including an isolated layer and a nucleation layer, is proposed to improve the growth of AlN films on sapphire substrate by metal organic chemical vapor deposition. This method is aimed to weaken the negative nitridation effect and improve lateral growth condition in the initial growth stage. It is found that suitably increasing the thickness of the nucleation layer is in favor of a better structural quality of the AlN film. An examination of surface morphology by atomic force microscopy suggests that the thicker the dual AlN buffer layer, the rougher the surface, and a higher quality of AlN epilayer is resulted.

  10. Epitaxial Growth of Chromium on Single Crystal Substrates with Hexagonal Symmetry. (afrikaans Text) .

    Science.gov (United States)

    van der Berg, Nicolaas George

    Chrome was vapour deposited under UHV conditions on copper, silver and nickel {111 } substrates. Transmission electron microscopy was used to investigate the effect of substrate temperature and the presence of residual gases on the orientation relationships and morphology during deposition. The experimental conditions under which agreement between theoretical predictions and experimental conditions were obtained, have been determined. For each system a temperature range was obtained in which theoretically predicted equilibrium orientations occurred. For Cr/Cu the KS orientation occurred in the range 190^circC <=q T <=q 256^ circC; for Cr/Ag the NW orientation occurred in the range 80^circC <=q T <=q 180 ^circC; and for Cr/Ni the KS orientation occurred in the range 180^circC <=q T <=q 270 ^circC. It is proposed that the first few monolayers grow coherently, and when coherency is broken, the NW orientation is obtained. A rotation of the crystallites is necessary to obtain the KS orientation. During this rotation, energy barriers, caused by micro-structural limitations, must be overcome. In this work the thermal energy was insufficient to overcome these energy barriers at low substrate temperatures and as a result a distribution of orientations was obtained instead of the equilibrium orientation. Residual gases, especially oxygen, also resulted in orientation deviations. In the case of chrome on silver the KS orientation was obtained for the first few monolayers. A transformation from the KS to the NW orientation was found with increasing thickness. This transition is in agreement with van der Merwe's model for an elastic overgrowth. Growth at high substrate temperatures followed Bauer's criterion. Island growth occurred on copper and silver substrates, while layer growth occurred for chrome on nickel, even though island growth was expected from energy considerations. A reason could be a lowering in the interface energy as a result of alloy formation. At low

  11. Observation of atomic carbon during photodissociation of nitrotoluenes in the vapor phase

    Science.gov (United States)

    Eilers, Hergen; Diez-y-Riega, Helena

    2014-05-01

    We perform laser-induced photodissociation fluorescence spectroscopy on mononitrotoluenes (MNTs) and dinitrotoluenes (DNTs) in the vapor phase and observe the spectrally overlapping fluorescence from nitric oxide (NO) and carbon (C). Energy-dispersive x-ray spectroscopy (EDS) and Raman spectroscopy of deposits found in the sample chamber confirm the presence of carbon. By comparing the observed fluorescence intensities with the Franck-Condon factors for NO, we are able to identify the presence or absence of fluorescence from carbon. 2-nitrotoluene and 4- nitrotoluene show carbon fluorescence for gate delays of up to 500 ns, while 2,4-dinitrotolune, 3,4-dinitrotolune, and 2,6-dinitrotolune show carbon fluorescence for gate delays of at least up to 1500 ns. The spectroscopic signal from atomic carbon in the vapor phase is observed at concentrations as low as 10 ppt. Based upon the observed S/N, detection at even lower concentrations appears feasible. Several non-nitrotoluene molecules including nitrobenzene, benzene, toluene, and CO2, are tested under identical conditions, but do not show any carbon emission. The presence of extra NO (simulation of NO pollutants) in the samples improves the S/N ratio for the detection of carbon. Energy transfer from laser-excited molecular nitrogen to NO, multiple decomposition channels in the electronic excited state of the nitrotoluene molecules, and interaction of NO with the excited-state decomposition process of the nitrotoluene molecules may all play a role.

  12. MEMS Lubrication by In-Situ Tribochemical Reactions From the Vapor Phase.

    Energy Technology Data Exchange (ETDEWEB)

    Dugger, Michael Thomas; Asay, David B.; Kim, Seong H.

    2008-01-01

    Vapor Phase Lubrication (VPL) of silicon surfaces with pentanol has been demonstrated. Two potential show stoppers with respect to application of this approach to real MEMS devices have been investigated. Water vapor was found to reduce the effectiveness of VPL with alcohol for a given alcohol concentration, but the basic reaction mechanism observed in water-free environments is still active, and devices operated much longer in mixed alcohol and water vapor environments than with chemisorbed monolayer lubricants alone. Complex MEMS gear trains were successfully lubricated with alcohol vapors, resulting in a factor of 104 improvement in operating life without failure. Complex devices could be made to fail if operated at much higher frequencies than previously used, and there is some evidence that the observed failure is due to accumulation of reaction products at deeply buried interfaces. However, if hypothetical reaction mechanisms involving heated surfaces are valid, then the failures observed at high frequency may not be relevant to operation at normal frequencies. Therefore, this work demonstrates that VPL is a viable approach for complex MEMS devices in conventional packages. Further study of the VPL reaction mechanisms are recommended so that the vapor composition may be optimized for low friction and for different substrate materials with potential application to conventionally fabricated, metal alloy parts in weapons systems. Reaction kinetics should be studied to define effective lubrication regimes as a function of the partial pressure of the vapor phase constituent, interfacial shear rate, substrate composition, and temperature.

  13. Enhanced Vapor-Phase Diffusion in Porous Media - LDRD Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Ho, C.K.; Webb, S.W.

    1999-01-01

    As part of the Laboratory-Directed Research and Development (LDRD) Program at Sandia National Laboratories, an investigation into the existence of enhanced vapor-phase diffusion (EVD) in porous media has been conducted. A thorough literature review was initially performed across multiple disciplines (soil science and engineering), and based on this review, the existence of EVD was found to be questionable. As a result, modeling and experiments were initiated to investigate the existence of EVD. In this LDRD, the first mechanistic model of EVD was developed which demonstrated the mechanisms responsible for EVD. The first direct measurements of EVD have also been conducted at multiple scales. Measurements have been made at the pore scale, in a two- dimensional network as represented by a fracture aperture, and in a porous medium. Significant enhancement of vapor-phase transport relative to Fickian diffusion was measured in all cases. The modeling and experimental results provide additional mechanisms for EVD beyond those presented by the generally accepted model of Philip and deVries (1957), which required a thermal gradient for EVD to exist. Modeling and experimental results show significant enhancement under isothermal conditions. Application of EVD to vapor transport in the near-surface vadose zone show a significant variation between no enhancement, the model of Philip and deVries, and the present results. Based on this information, the model of Philip and deVries may need to be modified, and additional studies are recommended.

  14. Mechanistic investigation of non-ideal sorption behavior in natural organic matter. 1. Vapor phase equilibrium.

    Science.gov (United States)

    Bell, Katherine Young; Leboeuf, Eugene J

    2012-06-19

    Results from an experimental and modeling investigation of the influence of thermodynamic properties of highly purified natural organic matter (NOM) on observed equilibrium sorption/desorption behaviors of vapor phase trichloroethylene (TCE) is presented. Identification of glass transition (T(g)) behavior in Leonardite humic acid and Organosolv lignin enabled evaluation of equilibrium and nonequilibrium sorption behavior in glassy and rubbery NOM. Specific differences in vapor phase equilibrium behavior in NOM above and below their T(g) were identified. In the glassy state (below T(g)), sorption of TCE is well-described by micropore models, with enthalpies of sorption characteristic of microporous, glassy macromolecules. Above T(g), sorptive behavior was well-described by Flory-Huggins theory, indicating that the mobility and structural configuration of rubbery NOM materials may be analogous to the characteristic sorption behavior observed in more mobile, rubbery macromolecules, including strong entropic changes during sorption. Results from this work provide further support that, at least for the samples employed in this study, NOM possesses macromolecular characteristics which display sorption behavior similar to synthetic macromolecules-an important assumption in conceptual sorption equilibrium models used in the analysis of the fate and transport of VOCs in the environment.

  15. Comparative Study of Solution Phase and Vapor Phase Deposition of Aminosilanes on Silicon Dioxide Surfaces

    Science.gov (United States)

    Yadav, Amrita R.; Sriram, Rashmi; Carter, Jared A.; Miller, Benjamin L.

    2014-01-01

    The uniformity of aminosilane layers typically used for the modification of hydroxyl bearing surfaces such as silicon dioxide is critical for a wide variety of applications, including biosensors. However, in spite of many studies that have been undertaken on surface silanization, there remains a paucity of easy-to-implement deposition methods reproducibly yielding smooth aminosilane monolayers. In this study, solution- and vapor-phase deposition methods for three aminoalkoxysilanes differing in the number of reactive groups (3-aminopropyl triethoxysilane (APTES), 3-aminopropyl methyl diethoxysilane (APMDES) and 3-aminopropyl dimethyl ethoxysilane (APDMES)) were assessed with the aim of identifying methods that yield highly uniform and reproducible silane layers that are resistant to minor procedural variations. Silane film quality was characterized based on measured thickness, hydrophilicity and surface roughness. Additionally, hydrolytic stability of the films was assessed via these thickness and contact angle values following desorption in water. We found that two simple solution-phase methods, an aqueous deposition of APTES and a toluene based deposition of APDMES, yielded high quality silane layers that exhibit comparable characteristics to those deposited via vapor-phase methods. PMID:24411379

  16. Vapor phase deposition of functional polymers onto paper-based microfluidic devices for advanced unit operations.

    Science.gov (United States)

    Kwong, Philip; Gupta, Malancha

    2012-11-20

    Paper-based microfluidic devices have recently received significant attention as a potential platform for low-cost diagnostic assays. However, the number of advanced unit operations, such as separation of analytes and fluid manipulation, that can be applied to these devices has been limited. Here, we use a vapor phase polymerization process to sequentially deposit functional polymer coatings onto paper-based microfluidic devices to integrate multiple advanced unit operations while retaining the fibrous morphology necessary to generate capillary-driven flow. A hybrid grafting process was used to apply hydrophilic polymer coatings with a high surface concentration of ionizable groups onto the surface of the paper fibers in order to passively separate analytes, which allowed a multicomponent mixture to be separated into its anionic and cationic components. Additionally, a UV-responsive polymer was sequentially deposited to act as a responsive switch to control the path of fluid within the devices. This work extends the advanced unit operations available for paper-based microfluidics and allows for more complex diagnostics. In addition, the vapor phase polymerization process is substrate independent, and therefore, these functional coatings can be applied to other textured materials such as membranes, filters, and fabrics.

  17. System Model of Heat and Mass Transfer Process for Mobile Solvent Vapor Phase Drying Equipment

    Directory of Open Access Journals (Sweden)

    Shiwei Zhang

    2014-01-01

    Full Text Available The solvent vapor phase drying process is one of the most important processes during the production and maintenance for large oil-immersed power transformer. In this paper, the working principle, system composition, and technological process of mobile solvent vapor phase drying (MVPD equipment for transformer are introduced in detail. On the basis of necessary simplification and assumption for MVPD equipment and process, a heat and mass transfer mathematical model including 40 mathematical equations is established, which represents completely thermodynamics laws of phase change and transport process of solvent, water, and air in MVPD technological processes and describes in detail the quantitative relationship among important physical quantities such as temperature, pressure, and flux in key equipment units and process. Taking a practical field drying process of 500 KV/750 MVA power transformer as an example, the simulation calculation of a complete technological process is carried out by programming with MATLAB software and some relation curves of key process parameters changing with time are obtained such as body temperature, tank pressure, and water yield. The change trend of theoretical simulation results is very consistent with the actual production record data which verifies the correctness of mathematical model established.

  18. Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jheng-Sin; Clavel, Michael B.; Hudait, Mantu K., E-mail: mantu.hudait@vt.edu [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Pandey, Rahul [Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Datta, Suman [Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Meeker, Michael; Khodaparast, Giti A. [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2016-06-28

    The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current–voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley–Read–Hall generation–recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.

  19. Growth and characterization of metamorphic InAs/GaSb tunnel heterojunction on GaAs by molecular beam epitaxy

    Science.gov (United States)

    Liu, Jheng-Sin; Clavel, Michael B.; Pandey, Rahul; Datta, Suman; Meeker, Michael; Khodaparast, Giti A.; Hudait, Mantu K.

    2016-06-01

    The structural, morphological, optical, and electrical transport characteristics of a metamorphic, broken-gap InAs/GaSb p-i-n tunnel diode structure, grown by molecular beam epitaxy on GaAs, were demonstrated. Precise shutter sequences were implemented for the strain-balanced InAs/GaSb active layer growth on GaAs, as corroborated by high-resolution X-ray analysis. Cross-sectional transmission electron microscopy and detailed micrograph analysis demonstrated strain relaxation primarily via the formation of 90° Lomer misfit dislocations (MDs) exhibiting a 5.6 nm spacing and intermittent 60° MDs at the GaSb/GaAs heterointerface, which was further supported by a minimal lattice tilt of 180 arc sec observed during X-ray analysis. Selective area diffraction and Fast Fourier Transform patterns confirmed the full relaxation of the GaSb buffer layer and quasi-ideal, strain-balanced InAs/GaSb heteroepitaxy. Temperature-dependent photoluminescence measurements demonstrated the optical band gap of the GaSb layer. Strong optical signal at room temperature from this structure supports a high-quality material synthesis. Current-voltage characteristics of fabricated InAs/GaSb p-i-n tunnel diodes measured at 77 K and 290 K demonstrated two bias-dependent transport mechanisms. The Shockley-Read-Hall generation-recombination mechanism at low bias and band-to-band tunneling transport at high bias confirmed the p-i-n tunnel diode operation. This elucidated the importance of defect control in metamorphic InAs/GaSb tunnel diodes for the implementation of low-voltage and high-performance tunnel field effect transistor applications.

  20. Epitaxial Growth of Ru and Pt on Pt(111 and Ru(0001, Respectively: A Combined AES and RHEED Study

    Directory of Open Access Journals (Sweden)

    M. S. Zei

    2010-01-01

    Full Text Available The epitaxial growth of Pt and Ru deposits by spontaneous, as well as by dynamic, electrodeposition onto Ru(0001 and Pt(111, respectively, have been studied by reflection high energy electron diffraction (RHEED and Auger electron spectroscopy (AES. For the Pt deposit on Ru(0001, at submonolayer range, it preferably grows compressed commensurate bilayer thick islands on Ru(0001. This is the first time that RHEED observation of the onset of Pt twinning occurs in ca. 2-3 layer thick islands on Ru at room temperature, at which the surface strain due to the 2.5% lattice mismatch of Pt and Ru remains intact. For multilayer thick islands (>6 ML ordered reflection twins (diameter of ∼3 nm develop and are embedded in a (111 matrix with an incoherent (11-2 twin plane normal to Ru(0001 and aligned with their [−110] direction parallel to the [11-20] Ru(0001 substrate direction. For the Ru deposit on Pt(111, at ∼0.2 ML a strained (1×1 monoatomic layer is formed due to the 2.5% lattice mismatch of Ru and Pt. Increasing the coverage up to ∼0.64, the second Ru layer is found to relieve the strain in the first layer, giving rise to dislocations and Ru relaxes to its bulk lattice constant. Multilayers of Ru (>1 ML result in (0001 nanocluster formation aligned with its [11-20] direction parallel to the [−110] Pt(111 substrate direction.

  1. Epitaxial growth of an antireflective, conductive, graded index ITO nanowire layer

    Directory of Open Access Journals (Sweden)

    Colm eO'Dwyer

    2013-10-01

    Full Text Available Nanoporous and nanostructured films, assemblies and arrangements are important from an applied point of view in microelectronics, photonics and optical materials. The ability to minimize reflection, control light output and use contrast and variation of the refractive index to modify photonic characteristics can provide routes to enhanced photonic crystal devices, omnidirectional reflectors, antireflection coatings and broadband absorbing materials. This work shows how multiscale branching of defect-free ITO NWs grown as a layer with a graded refractive index improves antireflection properties and shifts the transparency window into the near-infrared (NIR. The measurements confirm the structural quality and growth mechanism of the NW layer without any heterogeneous seeding for NW growth. Optical reflectance measurements confirm broadband antireflection down to <5% between 1.3-1.6 um which is tunable with the NW density. The work also outlines how the suppression of the Burstein-Moss shifts using refractive index variation allows transparency in a conductive NW layer into NIR range.

  2. Epitaxial growth of SrTiO3/YBa2Cu3O7 - x heterostructures by plasma-enhanced metalorganic chemical vapor deposition

    Science.gov (United States)

    Liang, S.; Chern, C. S.; Shi, Z. Q.; Lu, P.; Safari, A.; Lu, Y.; Kear, B. H.; Hou, S. Y.

    1994-06-01

    We report heteroepitaxial growth of SrTiO3 on YBa2Cu3O7-x/LaAlO3 substrates by plasma-enhanced metalorganic chemical vapor deposition. X-ray diffraction results indicated that SrTiO3 films were epitaxially grown on a (001) YBa2Cu3O7-x surface with [100] orientation perpendicular to the surface. The film composition, with Sr/Ti molar ratio in the range of 0.9 to 1.1, was determined by Rutherford backscattering spectrometry and energy dispersive spectroscopy. The thickness of the SrTiO3 films is 0.1-0.2 μm. The epitaxial growth was further evidenced by high-resolution transmission electron microscopy and selected area diffraction. Atomically abrupt SrTiO3/YBa2Cu3O7-x interface and epitaxial growth with [100]SrTiO3∥[001]YBa2Cu3O7-x were observed in this study. The superconducting transition temperature of the bottom YBa2Cu3O7-x layer, as measured by ac susceptometer, did not significantly degrade after the growth of overlayer SrTiO3. The capacitance-voltage measurements showed that the dielectric constant of the SrTiO3 films was as high as 315 at a signal frequency of 100 KHz. The leakage current density through the SrTiO3 films is about 1×10-6 A/cm2 at 2-V operation. Data analysis on the current-voltage characteristic indicated that the conduction process is related to bulk-limited Poole-Frenkel emission.

  3. Large-area epitaxial growth of MoSe2 via an incandescent molybdenum source

    Science.gov (United States)

    Kit Cheng, Man; Liang, Jing; Lai, Ying Hoi; Pang, Liang Xi; Liu, Yi; Shen, Jun Ying; Hou, Jian Qiang; He, Qing Lin; Chao Xu, Bo; Shu Chen, Jun; Wang, Gan; Liu, Chang; Lortz, Rolf; Keong Sou, Iam

    2017-11-01

    We have developed an incandescent Mo source to fabricate large-area single-crystalline MoSe2 thin films. The as-grown MoSe2 thin films were characterized using transmission electron microscopy, energy dispersive x-ray spectroscopy, atomic force microscopy, Raman spectroscopy, photoluminescence (PL), reflection high energy electron diffraction (RHEED) and angular resolved photoemission spectroscopy (ARPES). A new Raman characteristic peak at 1591 cm-1 was identified. Results from Raman spectroscopy, PL, RHEED and ARPES studies consistently reveal that large-area single crystalline mono-layer of MoSe2 could be achieved by this technique. This technique enjoys several advantages over conventional approaches and could be extended to the growth of other two-dimensional layered materials containing a low-vapor-pressure element.

  4. On the Solutions of a 2+1 -Dimensional Model for Epitaxial Growth with Axial Symmetry

    Science.gov (United States)

    Lu, Xin Yang

    2017-11-01

    In this paper, we study the evolution equation derived by Xu and Xiang (SIAM J Appl Math 69(5):1393-1414, 2009) to describe heteroepitaxial growth in 2+1 dimensions with elastic forces on vicinal surfaces is in the radial case and uniform mobility. This equation is strongly nonlinear and contains two elliptic integrals and defined via Cauchy principal value. We will first derive a formally equivalent parabolic evolution equation (i.e., full equivalence when sufficient regularity is assumed), and the main aim is to prove existence, uniqueness and regularity of strong solutions. We will extensively use techniques from the theory of evolution equations governed by maximal monotone operators in Banach spaces.

  5. Selective growth of strained (In)GaAs quantum dots on GaAs substrates employing diblock copolymer lithography nanopatterning

    Science.gov (United States)

    Kim, Honghyuk; Choi, Jonathan; Lingley, Zachary; Brodie, Miles; Sin, Yongkun; Kuech, Thomas F.; Gopalan, Padma; Mawst, Luke J.

    2017-05-01

    Semiconductor laser diodes (LD) were demonstrated employing a strained (In)GaAs quantum dot (QD) active region grown by metalorganic vapor phase epitaxy (MOVPE) on nominally exact (1 0 0) GaAs substrates using selective area epitaxy (SAE). The SAE QD growth employed a SiNx nano-patterned mask defined by diblock copolymer (BCP) lithography. In-situ etching using carbon tetrabromide (CBr4), prior to the SAE of the QDs, was shown to be effective to remove the processing-related damage introduced during the nanopattern transfer process, resulting in a significant reduction in the threshold current density of the LD under the optimal in-situ etching condition. Furthermore, the modal optical gain parameter and the transparency current density were extracted by the conventional cavity length analysis (CLA) on LD devices where the QD was grown with the optimal in-situ etching condition.

  6. Solid-phase epitaxial film growth and optical properties of a ferroelectric oxide, Sr2Nb2O7

    Science.gov (United States)

    Nezu, Yukio; Zhang, Yu-Qiao; Chen, Chunlin; Ikuhara, Yuichi; Ohta, Hiromichi

    2017-10-01

    High-quality epitaxial films of a ferroelectric oxide Sr2Nb2O7 were successfully fabricated by solid phase epitaxy (SPE) on (110) LaAlO3 single crystal substrates. In the SPE method, amorphous Sr-Nb-O films are first deposited by pulsed laser deposition at room temperature and then annealed in vacuum at elevated temperatures, resulting in the crystallization of Sr2Nb2O7 with highly ordered atomic arrangement and an atomically flat surface. The refractive index of the resultant film was 2.1, indicating that the dielectric permittivity of the film was in between 20 and 80, which corresponds well with that of single crystal Sr2Nb2O7, demonstrating the effectiveness of the SPE method for the fabrication of high-quality epitaxial films of Sr2Nb2O7.

  7. Molecular beam epitaxial growth of BaTiO3 single crystal on Ge-on-Si(001) substrates

    Science.gov (United States)

    Merckling, C.; Saint-Girons, G.; Botella, C.; Hollinger, G.; Heyns, M.; Dekoster, J.; Caymax, M.

    2011-02-01

    Thin films of perovskite type BaTiO3 (BTO) oxide have been grown epitaxially directly on Ge(001) surface at high temperature using molecular beam epitaxy. A stable (2×1) BaGex surface periodicity is the critical enabling template for subsequent BTO heteroepitaxy on Ge(001). Reflection high energy electron diffraction (RHEED) and transmission electron microscopy indicate that high quality heteroepitaxy on Ge-on-Si(001) take place with ⟨100⟩BTO(001)∥⟨110⟩Ge(001) confirming a 45° rotation epitaxial relationship. X-ray diffraction has been used to study the BTO lattice parameters and we evidenced that both tetragonal and cubic phases of BTO are present in the epilayer.

  8. Growth of 3C-SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 deg. C

    Energy Technology Data Exchange (ETDEWEB)

    Wang Li, E-mail: l.wang@griffith.edu.au; Dimitrijev, Sima; Han, Jisheng; Iacopi, Alan; Hold, Leonie; Tanner, Philip; Harrison, H. Barry

    2011-07-29

    To lower deposition temperature and reduce thermal mismatch induced stress, heteroepitaxial growth of single-crystalline 3C-SiC on 150 mm Si wafers was investigated at 1000 deg. C using alternating supply epitaxy. The growth was performed in a hot-wall low-pressure chemical vapor deposition reactor, with silane and acetylene being employed as precursors. To avoid contamination of Si substrate, the reactor was filled in with oxygen to grow silicon dioxide, and then this thin oxide layer was etched away by silane, followed by a carbonization step performed at 750 deg. C before the temperature was ramped up to 1000 deg. C to start the growth of SiC. Microstructure analyses demonstrated that single-crystalline 3C-SiC is epitaxially grown on Si substrate and the film quality is improved as thickness increases. The growth rate varied from 0.44 to 0.76 {+-} 0.02 nm/cycle by adjusting the supply volume of SiH{sub 4} and C{sub 2}H{sub 2}. The thickness nonuniformity across wafer was controlled with {+-} 1%. For a prime grade 150 mm virgin Si(100) wafer, the bow increased from 2.1 to 3.1 {mu}m after 960 nm SiC film was deposited. The SiC films are naturally n type conductivity as characterized by the hot-probe technique.

  9. Fibers comprised of epitaxially grown single-wall carbon nanotubes, and a method for added catalyst and continuous growth at the tip

    Science.gov (United States)

    Kittrell, W. Carter; Wang, Yuhuang; Kim, Myung Jong; Hauge, Robert H.; Smalley, Richard E.; Marek leg, Irene Morin

    2010-06-01

    The present invention is directed to fibers of epitaxially grown single-wall carbon nanotubes (SWNTs) and methods of making same. Such methods generally comprise the steps of: (a) providing a spun SWNT fiber; (b) cutting the fiber substantially perpendicular to the fiber axis to yield a cut fiber; (c) etching the cut fiber at its end with a plasma to yield an etched cut fiber; (d) depositing metal catalyst on the etched cut fiber end to form a continuous SWNT fiber precursor; and (e) introducing feedstock gases under SWNT growth conditions to grow the continuous SWNT fiber precursor into a continuous SWNT fiber.

  10. Hot wall epitaxial growth of diluted magnetic semiconductor Zn/sub 1-x/Mn/sub x/Se(111) on GaAs(100) substrate

    CERN Document Server

    Wang, J; Wang, X; Aziz-Ul-Haq, Q

    2003-01-01

    We report the growth of Zn/sub 1-x/Mn/sub x/Se films on GaAs(100) by hot wall epitaxy(HWE) upto a Mn concentration of 52%. The crystal structures of Zn/sub 1-x/Mn/sub x/Se layers were characterized by x-ray diffraction. For the first time Zn/sub 1-x/Mn/sub x/Se(111) layers on GaAs(100) substrate have been grown and mixed phases of zine-blende and hexagonal structure have been observed over the range 0.19

  11. Epitaxial growth of quantum dots on InP for device applications operating at the 1.55 μm wavelength range

    DEFF Research Database (Denmark)

    Semenova, Elizaveta; Kulkova, Irina; Kadkhodazadeh, Shima

    2014-01-01

    The development of epitaxial technology for the fabrication of quantum dot (QD) gain material operating in the 1.55 μm wavelength range is a key requirement for the evolvement of telecommunication. High performance QD material demonstrated on GaAs only covers the wavelength region 1-1.35 μm...... dependence, and low laser quantum efficiency. Here, we demonstrate that with tailored growth conditions, which suppress surface migration of adatoms during the SK QD formation, much smaller base diameter (13.6nm versus 23nm) and an improved aspect ratio are achieved. In order to gain advantage of non...

  12. The influence of microscopic and macroscopic non-stoichiometry on interfacial planarity during the solid-phase epitaxial growth of amorphized GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Belay, K.B.; Ridgway, M.C.; Llewellyn, D.J. [Australian National Univ., Canberra, ACT (Australia). Dept. of Physics

    1996-12-31

    The influence of microscopic and macroscopic non-stoichiometry on the Solid-Phase Epitaxial Growth of GaAs has been studied. Ion implantation has been employed to produce microscopic non-stoichiometry via Ga and As implants and macroscopic non-stoichiometry via Ga or As implants. In-situ Time Resolved Reflectivity and Transmission Electron Microscopy and ex-situ Rutherford Backscattering Spectroscopy and Channeling have been used to investigate the regrowth of amorphized GaAs layers. As non-stoichiometry shifts from microscopic to macroscopic the interface loses its planar nature and subsequently gets rougher. 7 refs., 3 figs.

  13. Controlled Growth of Non-Uniform Arsenic Profiles in Silicon Reduced-Pressure Chemical Vapor Deposition Epitaxial Layers

    NARCIS (Netherlands)

    Popadic, M.; Scholtes, T.L.M.; De Boer, W.; Sarubbi, F.; Nanver, L.K.

    2009-01-01

    An empirical model of As surface segregation during reduced-pressure chemical vapor deposition Si epitaxy is presented. This segregation mechanism determines the resulting doping profile in the grown layer and is here described by a model of simultaneous and independent As adsorption and segregation

  14. The liquid phase epitaxy method for the construction of oriented ZIF-8 thin films with controlled growth on functionalized surfaces

    KAUST Repository

    Shekhah, Osama

    2013-01-01

    Highly-oriented ZIF-8 thin films with controllable thickness were grown on an -OH-functionalized Au substrate using the liquid phase epitaxy method at room temperature, as evidenced by SEM and PXRD. The adsorption-desorption properties of the resulting ZIF-8 thin film were investigated for various VOCs using the QCM technique. © The Royal Society of Chemistry 2013.

  15. Evaluation of the Antibacterial Potential of Liquid and Vapor Phase Phenolic Essential Oil Compounds against Oral Microorganisms.

    Science.gov (United States)

    Wang, Tong-Hong; Hsia, Shih-Min; Wu, Chi-Hao; Ko, Shun-Yao; Chen, Michael Yuanchien; Shih, Yin-Hua; Shieh, Tzong-Ming; Chuang, Li-Chuan; Wu, Ching-Yi

    The aim of the present study was to determine the antibacterial activities of the phenolic essential oil (EO) compounds hinokitiol, carvacrol, thymol, and menthol against oral pathogens. Aggregatibacter actinomycetemcomitans, Streptococcus mutans, Methicillin-resistant Staphylococcus aureus (MRSA), and Escherichia. coli were used in this study. The minimum inhibitory concentrations (MICs), minimum bactericidal concentrations (MBCs), bacterial growth curves, temperature and pH stabilities, and synergistic effects of the liquid and vapor EO compounds were tested. The MIC/MBC of the EO compounds, ranging from the strongest to weakest, were hinokitiol (40-60 μg/mL/40-100 μg/mL), thymol (100-200 μg/mL/200-400 μg/mL), carvacrol (200-400 μg/mL/200-600 μg/mL), and menthol (500-more than 2500 μg/mL/1000-more than 2500 μg/mL). The antibacterial activities of the four EO phenolic compound based on the agar diffusion test and bacterial growth curves showed that the four EO phenolic compounds were stable under different temperatures for 24 h, but the thymol activity decreased when the temperature was higher than 80°C. The combination of liquid carvacrol with thymol did not show any synergistic effects. The activities of the vaporous carvacrol and thymol were inhibited by the presence of water. Continual violent shaking during culture enhanced the activity of menthol. Both liquid and vaporous hinokitiol were stable at different temperatures and pH conditions. The combination of vaporous hinokitiol with zinc oxide did not show synergistic effects. These results showed that the liquid and vapor phases of hinokitiol have strong anti-oral bacteria abilities. Hinokitiol has the potential to be applied in oral health care products, dental materials, and infection controls to exert antimicrobial activity.

  16. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.; Robinson, Zachary R.; Nath, Anindya; Kozen, Alexander C.; Qadri, Syed B.; DeMasi, Alexander; Hite, Jennifer K.; Ludwig, Karl F.; Eddy, Charles R.

    2017-05-01

    Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

  17. Reduction of crack density in ammonothermal bulk GaN growth

    Science.gov (United States)

    Letts, Edward; Key, Daryl; Hashimoto, Tadao

    2016-12-01

    The growth of high quality GaN by the ammonothermal method is appealing due to the potential to scale and achieve very high crystal quality. Several applications could benefit from the supply of very high quality GaN such as high power light emitting diodes, laser diodes, and high power electronics. Despite steady advancement by the few groups developing ammonothermal growth technology, high quality ammonothermal GaN wafers have yet be manufactured in great quantities. This paper reviews the current progress of ammonothermal growth at SixPoint Materials. Growths were performed at TGaN seed crystals produced by hydride vapor phase epitaxy (HVPE). For thin boules, Dislocation densities are routinely low 105 cm-2 .

  18. Germanium epitaxy on silicon

    Directory of Open Access Journals (Sweden)

    Hui Ye

    2014-03-01

    Full Text Available With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  19. Vapor-phase fabrication and properties of continuous-filament ceramic composites.

    Science.gov (United States)

    Besmann, T M; Sheldon, B W; Lowden, R A; Stinton, D P

    1991-09-06

    The continuous-filament ceramic composite is becoming recognized as necessary for new, high-temperature structural applications. Yet because of the susceptibility of the filaments to damage from traditional methods for the preparation of ceramics, vapor-phase infiltration has become the fabrication method of choice. The chemical vapor infiltration methods for producing these composites are now being studied in earnest, with the complexity of filament weaves and deposition chemistry being merged with standard heat and mass-transport relationships. Two of the most influential effects on the mechanical properties of these materials are the adhesion and frictional force between the fibers and the matrix, which can be controlled by a tailored interface coating. A variety of materials are available for producing these composites including carbide, nitride, boride, and oxide filaments and matrices. Silicon carbide-based materials are by far the most advanced and are already being used in aerospace applications.

  20. Vapor phase polymerization of PEDOT on silicone rubber as flexible large strain sensor

    Directory of Open Access Journals (Sweden)

    Timothy Giffney

    2015-10-01

    Full Text Available This paper presents a flexible large strain sensor made from ethylenedioxythiophene deposited on silicone rubber (Ecoflex® 00-30 via vacuum assisted vapor phase polymerization (VPP process. EDOT was used due to its stability when exposed to the atmosphere. VPP is a very simple process requiring only a vacuum bell jar and a vacuum pump. Ferrite chloride (FeCl3 dissolved in tethrahydrofuran was used as the oxidant to make the resulting poly(3,4-ethylenedioxythiophene (PEDOT conductive. THF was used because it swells Ecoflex® for better infusion of oxidant and PEDOT adherence. The sensor performs reliably up to 80% strain with a gauge factor of ~2.4 and small hysteresis.

  1. Vapor-Phase Raman Spectra and the Barrier to Planarity of Cyclohexane.

    Science.gov (United States)

    Chun, Hye Jin; Ocola, Esther J; Laane, Jaan

    2016-10-06

    The vapor-phase Raman spectra of an atmosphere of cyclohexane vapor heated to 90 and 110 °C collected over a large period of time and utilizing a high laser power of 4 W show hot band series starting at 380.8 cm-1 and corresponding to the v6(A1g) ring-inversion vibration. Fitting this data with a one-dimensional potential energy function allows the barrier to planarity of 8600 cm-1 (24.6 kcal/mol) to be calculated. Ab initio calculations (MP2/cc-pVTZ) predict a value of 10 377 cm-1 (29.7 kcal/mol), while DFT (B3LYP/cc-pVTZ) calculations predict 8804 cm-1 (25.2 kcal/mol).

  2. Procedure 5 Quality Assurance Requirements For Vapor Phase Mercury Continuous Emissions Monitoring Systems And Sorbent Trap Monitoring Systems Used For Compliance Determination At Stationary Sources

    Science.gov (United States)

    Promulgated quality assurance Procedure 5 Quality Assurance Requirements For Vapor Phase Mercury Continuous Emissions Monitoring Systems And Sorbent Trap Monitoring Systems Used For Compliance Determination At Stationary Sources

  3. General Top-Down Ion Exchange Process for the Growth of Epitaxial Chalcogenide Thin Films and Devices

    KAUST Repository

    Xia, Chuan

    2016-12-30

    We demonstrate a versatile top-down ion exchange process, done at ambient temperature, to form epitaxial chalcogenide films and devices, with nanometer scale thickness control. To demonstrate the versatility of our process we have synthesized (1) epitaxial chalcogenide metallic and semiconducting films and (2) free-standing chalcogenide films and (3) completed in situ formation of atomically sharp heterojunctions by selective ion exchange. Epitaxial NiCo2S4 thin films prepared by our process show 115 times higher mobility than NiCo2S4 pellets (23 vs 0.2 cm(2) V-1 s(-1)) prepared by previous reports. By controlling the ion exchange process time, we made free-standing epitaxial films of NiCo2S4 and transferred them onto different substrates. We also demonstrate in situ formation of atomically sharp, lateral Schottky diodes based on NiCo2O4/NiCo2S4 heterojunction, using a single ion exchange step. Additionally, we show that our approach can be easily extended to other chalcogenide semiconductors. Specifically, we used our process to prepare Cu1.8S thin films with mobility that matches single crystal Cu1.8S (25 cm(2) V-1 s(-1)), which is ca. 28 times higher than the previously reported Cu1.8S thin film mobility (0.58 cm(2) V-1 s(-1)), thus demonstrating the universal nature of our process. This is the first report in which chalcogenide thin films retain the epitaxial nature of the precursor oxide films, an approach that will be useful in many applications.

  4. Glass fibers and vapor phase components of cigarette smoke as cofactors in experimental respiratory tract carcinogenesis

    Energy Technology Data Exchange (ETDEWEB)

    Feron, V.J.; Kuper, C.F.; Spit, B.J.; Reuzel, P.G.; Woutersen, R.A.

    1985-01-01

    Syrian golden hamsters were given intratracheal instillations of glass fibers with or without BP suspended in saline, once a fortnight for 52 weeks; the experiment was terminated at week 85. No tumors of the respiratory tract were observed in hamsters treated with glass fibers alone. There was no indication that glass fibers enhanced the development of respiratory tract tumors induced by BP. In another study Syrian golden hamsters were exposed to fresh air or to a mixture of 4 major vapor phase components of cigarette smoke, viz. isoprene (800----700 ppm), methyl chloride (1000----900 ppm), methyl nitrite (200----190 ppm) and acetaldehyde (1400----1200 ppm) for a period of at most 23 months. Some of the animals were also given repeated intratracheal instillations of BP or norharman in saline. Laryngeal tumors were found in 7/31 male and 6/32 female hamsters exposed only to the vapor mixture, whereas no laryngeal tumors occurred in controls. The tumor response of the larynx most probably has to be ascribed entirely to the action of acetaldehyde. Simultaneous treatment with norharman or BP did not affect the tumor response of the larynx. Acetaldehyde may occur in the vapor phase of cigarette smoke at levels up to 2000 ppm. Chronic inhalation exposure of rats to acetaldehyde at levels of 0 (controls), 750, 1500 or 3000----1000 ppm resulted in a high incidence of nasal carcinomas, both squamous cell carcinomas of the respiratory epithelium and adenocarcinomas of the olfactory epithelium. It was discussed that acetaldehyde may significantly contribute to the induction of bronchogenic cancer by cigarette smoke in man.

  5. Treatment of Produced Waters Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    Energy Technology Data Exchange (ETDEWEB)

    Lynn E. Katz; Kerry A. Kinney; R. S. Bowman; E. J. Sullivan

    2004-03-11

    This report summarizes work of this project from October 2003 through March 2004. The major focus of the research was to further investigate BTEX removal from produced water, to quantify metal ion removal from produced water, and to evaluate a lab-scale vapor phase bioreactor (VPB) for BTEX destruction in off-gases produced during SMZ regeneration. Batch equilibrium sorption studies were conducted to evaluate the effect of semi-volatile organic compounds commonly found in produced water on the sorption of benzene, toluene, ethylbenzene, and xylene (BTEX) onto surfactant-modified zeolite (SMZ) and to examine selected metal ion sorption onto SMZ. The sorption of polar semi-volatile organic compounds and metals commonly found in produced water onto SMZ was also investigated. Batch experiments were performed in a synthetic saline solution that mimicked water from a produced water collection facility in Wyoming. Results indicated that increasing concentrations of semi-volatile organic compounds increased BTEX sorption. The sorption of phenol compounds could be described by linear isotherms, but the linear partitioning coefficients decreased with increasing pH, especially above the pKa's of the compounds. Linear correlations relating partitioning coefficients of phenol compounds with their respective solubilities and octanol-water partitioning coefficients were developed for data collected at pH 7.2. The sorption of chromate, selenate, and barium in synthetic produced water were also described by Langmuir isotherms. Experiments conducted with a lab-scale vapor phase bioreactor (VPB) packed with foam indicated that this system could achieve high BTEX removal efficiencies once the nutrient delivery system was optimized. The xylene isomers and benzene were found to require the greatest biofilter bed depth for removal. This result suggested that these VOCs would ultimately control the size of the biofilter required for the produced water application. The biofilter

  6. Epitaxial growth of Ti{sub 3}SiC{sub 2} thin films with basal planes parallel or orthogonal to the surface on {alpha}-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Drevin-Bazin, A.; Barbot, J. F.; Alkazaz, M.; Cabioch, T.; Beaufort, M. F. [Institut Pprime, UPR 3346, CNRS-Universite de Poitiers-ENSMA, Departement de Physique et Mecanique des Materiaux, SP2MI, Teleport 2, Bd M. et P. Curie, BP 30179, F-86962 Futuroscope-Chasseneuil (France)

    2012-07-09

    The growth of Ti{sub 3}SiC{sub 2} thin films were studied onto {alpha}-SiC substrates differently oriented by thermal annealing of TiAl layers deposited by magnetron sputtering. For any substrate's orientation, transmission electron microscopy coupled with x-ray diffraction showed the coherent epitaxial growth of Ti{sub 3}SiC{sub 2} films along basal planes of SiC. Specifically for the (1120) 4H-SiC, Ti{sub 3}SiC{sub 2} basal planes are found to be orthogonal to the surface. The continuous or textured nature of Ti{sub 3}SiC{sub 2} films does not depend of the SiC stacking sequence and is explained by a step-flow mechanism of growth mode. The ohmic character of the contact was confirmed by current-voltage measurements.

  7. TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors

    Science.gov (United States)

    Nakamura, Daisuke; Kimura, Taishi; Narita, Tetsuo; Suzumura, Akitoshi; Kimoto, Tsunenobu; Nakashima, Kenji

    2017-11-01

    A novel sintered tantalum carbide coating (SinTaC) prepared via a wet ceramic process is proposed as an approach to reducing the production cost and improving the crystal quality of bulk-grown crystals and epitaxially grown films of wide-bandgap semiconductors. Here, we verify the applicability of the SinTaC components as susceptors for chemical vapor deposition (CVD)-SiC and metal-organic chemical vapor deposition (MOCVD)-GaN epitaxial growth in terms of impurity incorporation from the SinTaC layers and also clarify the surface-roughness controllability of SinTaC layers and its advantage in CVD applications. The residual impurity elements in the SinTaC layers were confirmed to not severely incorporate into the CVD-SiC and MOCVD-GaN epilayers grown using the SinTaC susceptors. The quality of the epilayers was also confirmed to be equivalent to that of epilayers grown using conventional susceptors. Furthermore, the surface roughness of the SinTaC components was controllable over a wide range of average roughness (0.4 ≤ Ra ≤ 5 μm) and maximum height roughness (3 ≤ Rz ≤ 36 μm) through simple additional surface treatment procedures, and the surface-roughened SinTaC susceptor fabricated using these procedures was predicted to effectively reduce thermal stress on epi-wafers. These results confirm that SinTaC susceptors are applicable to epitaxial growth processes and are advantageous over conventional susceptor materials for reducing the epi-cost and improving the quality of epi-wafers.

  8. MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%

    Science.gov (United States)

    Nattermann, L.; Beyer, A.; Ludewig, P.; Hepp, T.; Sterzer, E.; Volz, K.

    2017-04-01

    Dilute bismide containing materials can play an important role in addressing the issue of finding new highly efficient lasers for telecommunications as well as sensing applications. In the last several years a growing body of literature has emerged, particularly on the growth of Ga(AsBi). However, the metal organic vapor phase epitaxy growth of Ga(AsBi) with high amounts of Bi, which are necessary to overcome Auger recombination and reach telecommunications wavelengths, still remains a challenge. Ga(PBi) could be a promising alternative, but has not been deposited with significant amounts of Bi so far. A second argument for Ga(PBi) is that it could be grown on GaP, which was already deposited on Si. A number of researchers have reported theoretical calculations on the band structure of Ga(PBi), but experimental results are still lacking. In this work we present the first Ga(PBi) structures, grown by metal organic vapor phase epitaxy on GaP and on GaP on Si. By careful characterization with high resolution X-ray diffraction, atomic force microscopy, secondary ion mass spectrometry and scanning transmission electron microscopy, we will show that we have realized high quality Ga(PBi) with Bi fractions over 8%.

  9. Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kruse, J. E.; Doundoulakis, G. [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Lymperakis, L. [Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Eftychis, S.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Adikimenakis, A.; Tsagaraki, K.; Androulidaki, M.; Konstantinidis, G. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P. [Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos 27, 15310 Aghia Paraskevi, Athens (Greece); Koukoula, T.; Kehagias, Th.; Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2016-06-14

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  10. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  11. Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy

    Directory of Open Access Journals (Sweden)

    Hanjong Paik

    2017-11-01

    Full Text Available Epitaxial La-doped BaSnO3 films were grown in an adsorption-controlled regime by molecular-beam epitaxy, where the excess volatile SnOx desorbs from the film surface. A film grown on a (001 DyScO3 substrate exhibited a mobility of 183 cm2 V−1 s−1 at room temperature and 400 cm2 V−1 s−1 at 10 K despite the high concentration (1.2 × 1011 cm−2 of threading dislocations present. In comparison to other reports, we observe a much lower concentration of (BaO2 Ruddlesden-Popper crystallographic shear faults. This suggests that in addition to threading dislocations, other defects—possibly (BaO2 crystallographic shear defects or point defects—significantly reduce the electron mobility.

  12. Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

    Science.gov (United States)

    Ghose, Susmita; Rahman, Shafiqur; Hong, Liang; Rojas-Ramirez, Juan Salvador; Jin, Hanbyul; Park, Kibog; Klie, Robert; Droopad, Ravi

    2017-09-01

    The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure (" separators="|2 ¯01 ) oriented β-Ga2O3 thin films with six-fold rotational symmetry when grown on a sapphire substrate. The thin films demonstrated significant absorption in the deep-ultraviolet (UV) region with an optical bandgap around 5.0 eV and a refractive index of 1.9. A deep-UV photodetector fabricated on the high quality β-Ga2O3 thin film exhibits high resistance and small dark current (4.25 nA) with expected photoresponse for 254 nm UV light irradiation suggesting that the material grown using the compound source is a potential candidate for deep-ultraviolet photodetectors.

  13. Superparamagnetism and different growth mechanisms of Co/Au(111) and Co/Cu(111) multilayers grown by molecular-beam epitaxy

    Science.gov (United States)

    Xu, J.; Howson, M. A.; Hickey, B. J.; Greig, D.; Kolb, E.; Veillet, P.; Wiser, N.

    1997-01-01

    The magnetization of Co/Au(111) and Co/Cu(111) multilayers grown by molecular-beam epitaxy has been measured. For ultrathin Co layers, superparamagnetic behavior is observed, very similar to that reported previously for granular samples. For somewhat thicker Co layers, hysteresis effects occur, indicating the absence of superparamagnetism. The clear transition seen between these two modes of behavior is attributed to the growth of the Co particles from very small superparamagnetic clusters to larger islands and ultimately to a film, as the thickness of the Co layers is increased. Different magnetic properties are found for the Co/Au(111) and the Co/Cu(111) systems during the transition from granular to continuous layers. An investigation by reflection high-energy electron diffraction suggests that this difference is mainly due to the different growth modes of Co on Au(111) and on Cu(111).

  14. AlGaAs burying growth for InGaAsP/GaAs buried heterostructure lasers by liquid-phase epitaxy

    Science.gov (United States)

    Ishikawa, Joji; Tayama, Satoshi; Ito, Toshio; Takahashi, N. Shin-ichi; Kurita, Shoichi

    1989-04-01

    Liquid-phase-epitaxial (LPE) growth of Al xGa 1- xAs layers at 700°C has been used in the fabrication of 0.8 μ m InGaAsP buried heterostructure (BH) lasers grown on GaAs substrates. The solidus composition, X, was 0.66. By etching the mesa in KKI solution at 3°C for 2 min after a mesa etch in Br-methanol solution, high quality BH wafers with smooth surfaces and interfaces were reproducibly obtained after the AlGaAs secondary BH growth. The InGaAsP active region was entirely surrounded by InGaAsP cladding layers and AlGaAs burying layers providing both lateral and vertical carrier and optical confinement. Lasing action at room temperature under pulsed operation was achieved.

  15. Vapor phase toxicity of marjoram oil compounds and their related monoterpenoids to Blattella germanica (Orthoptera: Blattellidae).

    Science.gov (United States)

    Jang, Young-Su; Yang, Young-Cheol; Choi, Dal-Soon; Ahn, Young-Joon

    2005-10-05

    The toxicity of marjoram, Origanum majorana L., oil, 41 monoterpenoids, and 2 sesquiterpenoids against adult females of the German cockroach, Blattella germanica L., was examined using direct contact and vapor phase toxicity bioassays and compared with those of deltamethrin, dichlorvos, permethrin, and propoxur, four commonly used insecticides. In a filter-paper contact toxicity bioassay, the adulticidal activities of pulegone (0.06 mg/cm2), (+/-)-camphor (0.07 mg/cm2), and verbenone (0.07 mg/cm2) were comparable to that of permethrin (0.05 mg/cm2) but more pronounced than that of propoxur (0.18 mg/cm2), as judged by the 24-h LC50 values. These compounds were less effective than either deltamethrin (0.013 mg/cm2) or dichlorvos (0.007 mg/cm2). The toxicity of marjoram oil, thymol, alpha-terpineol, (-)-alpha-thujone, linalool, 1,8-cineole, (-)-camphor, and (+)-carvone, ranging from 0.08 to 0.18 mg/cm2, was higher than that of propoxur. In vapor phase toxicity tests, verbenone (11.48 mg/L air) was the most toxic compound followed by (-)-alpha-thujone (18.43 mg/L of air), thymol (18.76 mg/L of air), alpha-terpineol (21.89 mg/L of air), (+/-)-camphor (24.59 mg/L of air), linalool (26.20 mg/L of air), and marjoram oil (38.28 mg/L of air) on the basis of the 24-h LC50 values. Dichlorvos (0.07 mg/L of air) was the most potent fumigant. Structure-activity relationships indicate that structural characteristics, such as degrees of saturation and types of functional groups rather than types of carbon skeleton, and hydrophobicity and vapor pressure parameters appear to play a role in determining the monoterpenoid toxicities to adult B. germanica. Marjoram oil and the monoterpenoids described merit further study as potential fumigants or leads for the control of B. germanica.

  16. Surface instability and associated roughness during conventional and pendeo-epitaxial growth of GaN(0 0 0 1) films via MOVPE

    Science.gov (United States)

    Roskowski, A. M.; Miraglia, P. Q.; Preble, E. A.; Einfeldt, S.; Davis, R. F.

    2002-05-01

    Investigations of the origins of surface roughening in GaN(0 0 0 1) have resulted in the development of a growth process route having an optimum temperature of 1020°C and a film thickness beyond 2.5 μm which results in films with the smoothest surface morphology. Atomic force microscopy (AFM) revealed uncoalesced GaN islands and hillocks for non-optimum temperatures below and above 1020°C, respectively. Uncoalesced islands were a result of insufficient lateral growth. Hillocks were a result of the rotation of heterogeneous steps formed at pure screw or mixed dislocations which terminated on the (0 0 0 1) surface. Growth of the latter features was controlled kinetically by temperature through adatom diffusion. The 10 6 cm -2 density of hillocks was reduced through growth on thick GaN templates and regions of pendeo-epitaxy (PE) overgrowth with lower pure screw or mixed dislocations. Smooth PE surfaces were obtained at temperatures that reduced the lateral to vertical growth rate but also retarded hillock growth that originated in the stripe regions. The (1 1 2¯ 0) PE sidewall surface was atomically smooth, with a root mean square roughness value of 0.17 nm, which was the noise limited resolution of the AFM measurements.

  17. Carbon-supported bimetallic Pd–Fe catalysts for vapor-phase hydrodeoxygenation of guaiacol

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Junming; Karim, Ayman M.; Zhang, He; Kovarik, Libor; Li, Xiaohong Shari; Hensley, Alyssa J.; McEwen, Jean-Sabin; Wang, Yong

    2013-10-01

    Abstract Carbon supported metal catalysts (Cu/C, Fe/C, Pd/C, Pt/C, PdFe/C and Ru/C) have been prepared, characterized and tested for vapor-phase hydrodeoxygenation (HDO) of guaiacol (GUA) at atmospheric pressure. Phenol was the major intermediate on all catalysts. Over the noble metal catalysts saturation of the aromatic ring was the major pathway observed at low temperature (250 °C), forming predominantly cyclohexanone and cyclohexanol. Substantial ring opening reaction was observed on Pt/C and Ru/C at higher reaction temperatures (e.g., 350 °C). Base metal catalysts, especially Fe/C, were found to exhibit high HDO activity without ring-saturation or ring-opening with the main products being benzene, phenol along with small amounts of cresol, toluene and trimethylbenzene (TMB). A substantial enhancement in HDO activity was observed on the PdFe/C catalysts. Compared with Fe/C, the yield to oxygen-free aromatic products (i.e., benzene/toluene/TMB) on PdFe/C increased by a factor of four at 350 °C, and by approximately a factor of two (83.2% versus 43.3%) at 450 °C. The enhanced activity of PdFe/C is attributed to the formation of PdFe alloy as evidenced by STEM, EDS and TPR.

  18. Vapor-phase polymerization of nanofibrillar poly(3,4-ethylenedioxythiophene) for supercapacitors.

    Science.gov (United States)

    D'Arcy, Julio M; El-Kady, Maher F; Khine, Pwint P; Zhang, Linghong; Lee, Sun Hwa; Davis, Nicole R; Liu, David S; Yeung, Michael T; Kim, Sung Yeol; Turner, Christopher L; Lech, Andrew T; Hammond, Paula T; Kaner, Richard B

    2014-02-25

    Nanostructures of the conducting polymer poly(3,4-ethylenedioxythiophene) with large surface areas enhance the performance of energy storage devices such as electrochemical supercapacitors. However, until now, high aspect ratio nanofibers of this polymer could only be deposited from the vapor-phase, utilizing extrinsic hard templates such as electrospun nanofibers and anodized aluminum oxide. These routes result in low conductivity and require postsynthetic template removal, conditions that stifle the development of conducting polymer electronics. Here we introduce a simple process that overcomes these drawbacks and results in vertically directed high aspect ratio poly(3,4-ethylenedioxythiophene) nanofibers possessing a high conductivity of 130 S/cm. Nanofibers deposit as a freestanding mechanically robust film that is easily processable into a supercapacitor without using organic binders or conductive additives and is characterized by excellent cycling stability, retaining more than 92% of its initial capacitance after 10,000 charge/discharge cycles. Deposition of nanofibers on a hard carbon fiber paper current collector affords a highly efficient and stable electrode for a supercapacitor exhibiting gravimetric capacitance of 175 F/g and 94% capacitance retention after 1000 cycles.

  19. Vapor Phase Hydrogenation of Nitrobenzene to Aniline Over Carbon Supported Ruthenium Catalysts.

    Science.gov (United States)

    Srikanth, Chakravartula S; Kumar, Vanama Pavan; Viswanadham, Balaga; Srikanth, Amirineni; Chary, Komandur V R

    2015-07-01

    A series of Ru/Carbon catalysts (0.5-6.0 wt%) were prepared by impregnation method. The catalysts were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), temperature programmed reduction (TPR), X-ray photoelectron spectroscopy (XPS), CO-chemisorption, surface area and pore-size distribution measurements. The catalytic activities were evaluated for the vapor phase hydrogenation of nitrobenzene. The dispersion measured by CO-uptake values suggests that a decrease of dispersion is observed with increasing Ru loading on carbon support. These findings are well supported by the crystallite size measured from XRD measurements. XPS study reveals the formation of Ru0 after reduction at 573 K for 3 h. The catalysts exhibit high conversion/selectivity at 4.5 wt% Ru loading during hydrogenation reaction. The particle size measured from CO-chemisorption and TEM analysis are related to the TOF during the hydrogenation reaction. Ru/C catalysts are found to show higher conversion/selectivities during hydrogenation of nitrobenzene to aniline.

  20. Vapor-Phase Free Radical Polymerization in the Presence of Ionic Liquids

    Science.gov (United States)

    Gupta, Malancha

    2011-03-01

    Ionic liquids (ILs) have recently attracted significant interest as an environmentally-friendly alternative to traditional volatile organic solvents because ILs are non-volatile, non-flammable, and can be easily recycled. ILs can be exploited in many ways to improve the selectivity and kinetics of chemical reactions, including polymer synthesis. Ionic liquids have negligible vapor pressure and are therefore stable under vacuum. A few studies have investigated ILs as substrates in inorganic vacuum deposition processes, but to our knowledge ILs have not been used in vapor phase polymerization systems. We have recently introduced ionic liquids into the initiated chemical vapor deposition (iCVD) process for the first time. The iCVD polymerization process occurs via a free-radical mechanism, and the deposited polymeric films are compositionally analogous to solution-phase polymers. Despite the wide range of polymers that have been synthesized using iCVD, it has proven difficult to polymerize monomers with low surface concentrations such as styrene and low propagation rates such as methyl methacrylate and it is difficult to produce block copolymers. In this talk, we will show that our novel ILiCVD system can address some of these shortcomings. We will explain the effects of deposition time, temperature, and monomer solubility on the morphology of the polymer and the molecular weight of the polymer chains.

  1. Hydroxylation of phenol over MeAPO molecular sieves synthesized by vapor phase transport

    Science.gov (United States)

    Shao, Hui; Chen, Jingjing; Chen, Xia; Leng, Yixin; Zhong, Jing

    2016-07-01

    In this study, MeAPO-25 (Me = Fe, Cu, Mn) molecular sieves were first synthesized by a vapor phase transport method using tetramethyl guanidine as the template and applied to hydroxylation of phenol. The zeolites were characterized by XRD, SEM, FT-IR, and DR UV-Vis. As a result, MeAPO-21 and MeAPO-15 were synthesized by changing the Me/Al ratio. UV-Visible diffuse reflectance study suggested incorporation of heteroatoms into the framework and FT-IR study also supported these data. Effects of heteroatoms, contents of Me in MeAPO-25, reaction temperature, phenol/H2O2 mole ratios, reaction time and concentration of catalyst on the conversion of phenol, as well as on the selectivity were studied. FeAPO-25 exhibited a high catalytic activity at the mole ratio of FeO and Al2O3 equal to 0.1 in the synthesis gel, giving the phenol conversion of 88.75% and diphenols selectivity of 66.23% at 60°C within 3 h [ n(phenol)/ n(H2O2) = 0.75, m(FeAPO-25)/ m(phenol) = 7.5%]. Experimental results indicated that the FeAPO-25 molecular sieve was a fairly promising candidate for the application in hydroxylation of phenol.

  2. Sulfidic vapor phase catalysts, especially tungsten sulfide, in industrial coal hydrogenation

    Energy Technology Data Exchange (ETDEWEB)

    Pier, M.

    1943-01-01

    The historical development of high-pressure processes of the I. G. Farbenindustrie, from ammonia through methanol and gasoline, and the special case of gasoline production with a fixed-bed catalyst (tungsten sulfide) were discussed. The preparation, properties, and uses of this versatile catalyst were discussed, but it was emphasized that with the sotrmy development of the process, a condition which still existed at the time of this report, and with a great number of practical problems to solve, no extensive study of basic facts had ben possible. This tungsten sulfide catalyst was an especially active vapor-phase catalyst which operated at lower temperatures than the molybdenum catalysts formerly used. It also permitted higher thruputs, even with the oils from bituminous coal that were difficult to split. For certain uses, such as the improvement of the antiknock properties or the saving in tungsten, it was strongly diluted. Studies on using up sulfur in the tungsten sulfide catalyst were in progress at this time and showed there was practically no reduction of it under the conditions of hydrogenation under pressure as long as the raw material contained sulfur.

  3. Development of an acoustic wave based biosensor for vapor phase detection of small molecules

    Science.gov (United States)

    Stubbs, Desmond

    For centuries scientific ingenuity and innovation have been influenced by Mother Nature's perfect design. One of her more elusive designs is that of the sensory olfactory system, an array of highly sensitive receptors responsible for chemical vapor recognition. In the animal kingdom this ability is magnified among canines where ppt (parts per trillion) sensitivity values have been reported. Today, detection dogs are considered an essential part of the US drug and explosives detection schemes. However, growing concerns about their susceptibility to extraneous odors have inspired the development of highly sensitive analytical detection tools or biosensors known as "electronic noses". In general, biosensors are distinguished from chemical sensors in that they use an entity of biological origin (e.g. antibody, cell, enzyme) immobilized onto a surface as the chemically-sensitive film on the device. The colloquial view is that the term "biosensors" refers to devices which detect the presence of entities of biological origin, such as proteins or single-stranded DNA and that this detection must take place in a liquid. Our biosensor utilizes biomolecules, specifically IgG monoclonal antibodies, to achieve molecular recognition of relatively small molecules in the vapor phase.

  4. Reflectance-anisotropy study of the dynamics of molecular beam epitaxy growth of GaAs and InGaAs on GaAs(001)

    Energy Technology Data Exchange (ETDEWEB)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Balderas-Navarro, R.E. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico); Facultad de Ciencias, Universidad Autonoma de San Luis Potosi. Alvaro Obregon 64, San Luis Potosi (Mexico)

    2008-07-01

    Reflectance-Anisotropy (RA) observations during the Molecular Beam Epitaxy (MBE) growth of zincblende semiconductors films were carried out using the E{sub 1} optical transition as a probe. We follow the kinetics of the deposition of GaAs and In{sub 0.3}Ga{sub 0.7}As on GaAs(001) at growth rates of 0.2 and 0.25 ML/s, respectively. During growth we used a constant As{sub 4} or As{sub 2} flux pressure of 5 x 10{sup -6} Torr. Clear RA-oscillations were observed during growth with a period that nearly coincides with the growth period for a Ga-As bilayer. RHEED was used as an auxiliary technique in order to obtain a correlation between RHEED and RA oscillations. On the basis of our results, we argue that RAS oscillations are mainly associated to periodic changes in surface atomic structure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Growth and characterization of InP ringlike quantum-dot molecules grown by solid-source molecular beam epitaxy.

    Science.gov (United States)

    Jevasuwan, Wipakorn; Boonpeng, Poonyasiri; Panyakeow, Somsak; Ratanathammaphan, Somchai

    2010-11-01

    In this paper, we have studied the fabrication of InP ringlike quantum-dot molecules on GaAs(001) substrate grown by solid-source molecular beam epitaxy using droplet epitaxy technique and the effect of In deposition rate on the physical and optical properties of InP ringlike quantum-dot molecules. The In deposition rate is varied from 0.2 ML/s to 0.4, 0.8 and 1.6 ML/s. The surface morphology and cross-section were examined by ex-situ atomic force microscope and transmission electron microscope, respectively. The increasing of In deposition rate results in the decreasing of outer and inner diameters of InP ringlike quantum-dot molecules and height of InP quantum dots but increases the InP quantum dot and ringlike quantum-dot molecule densities. The photoluminescence peaks of InP ringlike quantum-dot molecules are blue-shifted and FWHM is narrower when In deposition rate is bigger.

  6. Epitaxial growth of hetero-Ln-MOF hierarchical single crystals for domain- and orientation-controlled multicolor luminescence 3D coding capability

    Energy Technology Data Exchange (ETDEWEB)

    Pan, Mei; Zhu, Yi-Xuan; Wu, Kai; Chen, Ling; Hou, Ya-Jun; Yin, Shao-Yun; Wang, Hai-Ping; Fan, Ya-Nan [MOE Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-Sen University, Guangzhou (China); Su, Cheng-Yong [MOE Laboratory of Bioinorganic and Synthetic Chemistry, Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-Sen University, Guangzhou (China); State Key Laboratory of Applied Organic Chemistry, Lanzhou University, Lanzhou (China)

    2017-11-13

    Core-shell or striped heteroatomic lanthanide metal-organic framework hierarchical single crystals were obtained by liquid-phase anisotropic epitaxial growth, maintaining identical periodic organization while simultaneously exhibiting spatially segregated structure. Different types of domain and orientation-controlled multicolor photophysical models are presented, which show either visually distinguishable or visible/near infrared (NIR) emissive colors. This provides a new bottom-up strategy toward the design of hierarchical molecular systems, offering high-throughput and multiplexed luminescence color tunability and readability. The unique capability of combining spectroscopic coding with 3D (three-dimensional) microscale spatial coding is established, providing potential applications in anti-counterfeiting, color barcoding, and other types of integrated and miniaturized optoelectronic materials and devices. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Epitaxial Growth of Multimetallic Pd@PtM (M = Ni, Rh, Ru) Core-Shell Nanoplates Realized by in Situ-Produced CO from Interfacial Catalytic Reactions.

    Science.gov (United States)

    Yan, Yucong; Shan, Hao; Li, Ge; Xiao, Fan; Jiang, Yingying; Yan, Youyi; Jin, Chuanhong; Zhang, Hui; Wu, Jianbo; Yang, Deren

    2016-12-14

    Pt-based multimetallic core-shell nanoplates have received great attention as advanced catalysts, but the synthesis is still challenging. Here we report the synthesis of multimetallic Pd@PtM (M = Ni, Rh, Ru) nanoplates including Pd@Pt nanoplates, in which Pt or Pt alloy shells with controlled thickness epitaxially grow on plate-like Pd seeds. The key to achieve high-quality Pt-based multimetallic nanoplates is in situ generation of CO through interfacial catalytic reactions associated with Pd nanoplates and benzyl alcohol. In addition, the accurate control in a trace amount of CO is also of great importance for conformal growth of multimetallic core-shell nanoplates. The Pd@PtNi nanoplates exhibit substantially improved activity and stability for methanol oxidation reaction (MOR) compared to the Pd@Pt nanoplates and commercial Pt catalysts due to the advantages arising from plate-like, core-shell, and alloy structures.

  8. Layer-by-layer shuttered molecular-beam epitaxial growth of superconducting Sr{sub 1-x}La{sub x}CuO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Maritato, L. [Dipartimento di Ingegneria dell' Informazione, Ingegneria Elettrica e Matematica Applicata-DIEM,University of Salerno and CNR-SPIN, 84084 Fisciano (Italy); Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Galdi, A.; Orgiani, P. [Dipartimento di Ingegneria dell' Informazione, Ingegneria Elettrica e Matematica Applicata-DIEM, University of Salerno and CNR-SPIN, 84084 Fisciano (Italy); Harter, J. W. [Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853 (United States); Schubert, J. [Forschungszentrum Julich, Institute of Bio- and Nano-systems IBN, D-52425 Julich (Germany) and Forschungszentrum Julich, JARA Fundamentals of Future Information Technology, D-52425 Julich (Germany); Shen, K. M. [Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States); Schlom, D. G. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

    2013-02-07

    Superconducting Sr{sub 1-x}La{sub x}CuO{sub 2} thin films have been grown on GdScO{sub 3} substrates by reflection high-energy electron diffraction calibrated layer-by-layer molecular-beam epitaxy. X-ray diffraction analysis has confirmed the infinite layer structure after an in situ vacuum annealing step. In situ photoemission spectroscopy indicates that the vacuum annealing step employed immediately after film growth to achieve superconducting films results in oxygen loss from the films. The superconducting critical temperature depends on the La content x, with the highest value obtained for x{approx}0.10. Resistivity as a function of temperature {rho}(T) curves of optimally doped samples show a T{sup 2} temperature dependence characteristic of a scattering process where electron-electron interactions dominate.

  9. Chemistry, growth kinetics, and epitaxial stabilization of Sn2+ in Sn-doped SrTiO3 using (CH36Sn2 tin precursor

    Directory of Open Access Journals (Sweden)

    Tianqi Wang

    2016-12-01

    Full Text Available PbTiO3-based ferroelectrics have impressive electroactive properties, originating from the Pb2+ 6s2 electron lone-pair, which cause large elastic distortion and electric polarization due to cooperative pseudo Jahn-Teller effect. Recently, tin-based perovskite oxide (SnTiO3 containing Sn2+ and a chemistry similar to that of the 6s2 lone-pair has been identified as a thermally stable, environmentally friendly substitute for PbTiO3-based ferroelectrics. However experimental attempts to stabilize Sn2+ on the A-site of perovskite ATiO3 have so far failed. In this work, we report on the growth of atomically smooth, epitaxial, and coherent Sn-alloyed SrTiO3 films on SrTiO3 (001 substrates using a hybrid molecular beam epitaxy approach. With increasing Sn concentration, the out-of-plane lattice parameter first increases in accordance with the Vegard’s law and then decreases for Sn(Sr+Ti+Sn at. % ratio > 0.1 due to the incorporation of Sn2+ at the A-site. Using a combination of high-resolution X-ray photoelectron spectroscopy and density functional calculations, we show that while majority of Sn is on the B-site, there is a quantitatively unknown fraction of Sn being consistent with the A-site occupancy making SrTiO3 polar. A relaxor-like ferroelectric local distortion with monoclinic symmetry, induced by A-site Sn2+, was observed in Sn-doped SrTiO3 with Sn(Sr+Ti+Sn at. % ratio = 0.1 using optical second harmonic generation measurements. The role of growth kinetics on the stability of Sn2+ in SrTiO3 is discussed.

  10. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  11. Development of a Rapid Cell-free Method for Cytotoxicity Assessment of Vapor Phase of Cigarette Smoke

    Directory of Open Access Journals (Sweden)

    Cahours X

    2014-12-01

    Full Text Available Currently, several in vitro tests are widely used to measure toxicological properties of mainstream smoke (Neutral Red Uptake Assay, Micronucleus assay, Ames Test. These tests are necessary to assess cytotoxicity, genotoxicity, and mutagenicity, but are time consuming. This is essentially due to the preparation and the handling of cells. It is difficult to use these in vitro tests as screening method for product testing and development. For a better assessment of the cytotoxicity of the vapor phase, a rapid cell-free method has been developed. This paper describes a capillary electrophoresis cell-free method, based on the depletion of an anti-oxidant L-gamma-glutamyl-L-cysteinylglycine (GSH, applied to an aliquot of vapor phase phosphate buffered saline (PBS-trapped cigarette smoke (as recommended for in vitro testing. The correlation between this method and the survival/viability test (Neutral Red cytotoxicity is excellent (coefficient of correlation (r = 0.99.

  12. Exceptionally large migration length of carbon and topographically-facilitated self-limiting molecular beam epitaxial growth of graphene on hexagonal boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Plaut, Annette S.; Wurstbauer, Ulrich; Wang, Sheng; Levy, Antonio L.; Fernandes dos Santos, Lara; Wang, Lei; Pfeiffer, Loren N.; Watanabe, Kenji; Taniguchi, Takashi; Dean, Cory R.; Hone, James; Pinczuk, Aron; Garcia, Jorge M.

    2017-04-01

    We demonstrate growth of single-layer graphene (SLG) on hexagonal boron nitride (h-BN) by molecular beam epitaxy (MBE), only limited in area by the finite size of the h-BN flakes. Using atomic force microscopy and micro-Raman spectroscopy, we show that for growth over a wide range of temperatures (500 °C – 1000 °C) the deposited carbon atoms spill off the edge of the h-BN flakes. We attribute this spillage to the very high mobility of the carbon atoms on the BN basal plane, consistent with van der Waals MBE. The h-BN flakes vary in size from 30 μm to 100 μm, thus demonstrating that the migration length of carbon atoms on h-BN is greater than 100 μm. When sufficient carbon is supplied to compensate for this loss, which is largely due to this fast migration of the carbon atoms to and off the edges of the h-BN flake, we find that the best growth temperature for MBE SLG on h-BN is ~950 °C. Self-limiting graphene growth appears to be facilitated by topographic h-BN surface features: We have thereby grown MBE self-limited SLG on an h-BN ridge. This opens up future avenues for precisely tailored fabrication of nano- and hetero-structures on pre-patterned h-BN surfaces for device applications.

  13. Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Shuxian Cai

    2015-08-01

    Full Text Available The Si(0001 face and C(000-1 face dependences on growth pressure of epitaxial graphene (EG grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD was studied using atomic force microscopy (AFM and micro-Raman spectroscopy (μ-Raman. AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur on C-faced substrates. It was shown by μ-Raman that the properties of EG on both polar faces were different. EGs on Si-faced substrates were relatively thinner and more uniform than on C-faced substrates at low growth pressure. On the other hand, D band related defects always appeared in EGs on Si-faced substrates, but they did not appear in EG on C-faced substrate at an appropriate growth pressure. This was due to the μ-Raman covering the step edges when measurements were performed on Si-faced substrates. The results of this study are useful for optimized growth of EG on polar surfaces of SiC substrates.

  14. Characterization of vapor phase mercury released from concrete processing with baghouse filter dust added cement.

    Science.gov (United States)

    Wang, Jun; Hayes, Josh; Wu, Chang-Yu; Townsend, Timothy; Schert, John; Vinson, Tim; Deliz, Katherine; Bonzongo, Jean-Claude

    2014-02-18

    The fate of mercury (Hg) in cement processing and products has drawn intense attention due to its contribution to the ambient emission inventory. Feeding Hg-loaded coal fly ash to the cement kiln introduces additional Hg into the kiln's baghouse filter dust (BFD), and the practice of replacing 5% of cement with the Hg-loaded BFD by cement plants has recently raised environmental and occupational health concerns. The objective of this study was to determine Hg concentration and speciation in BFD as well as to investigate the release of vapor phase Hg from storing and processing BFD-added cement. The results showed that Hg content in the BFD from different seasons ranged from 0.91-1.44 mg/kg (ppm), with 62-73% as soluble inorganic Hg, while Hg in the other concrete constituents were 1-3 orders of magnitude lower than the BFD. Up to 21% of Hg loss was observed in the time-series study while storing the BFD in the open environment by the end of the seventh day. Real-time monitoring in the bench system indicated that high temperature and moisture can facilitate Hg release at the early stage. Ontario Hydro (OH) traps showed that total Hg emission from BFD is dictated by the air exchange surface area. In the bench simulation of concrete processing, only 0.4-0.5% of Hg escaped from mixing and curing BFD-added cement. A follow-up headspace study did not detect Hg release in the following 7 days. In summary, replacing 5% of cement with the BFD investigated in this study has minimal occupational health concerns for concrete workers, and proper storing and mixing of BFD with cement can minimize Hg emission burden for the cement plant.

  15. Fabrication of polyimide shells by vapor phase deposition for use as ICF targets

    Energy Technology Data Exchange (ETDEWEB)

    Alfonso, E.L.; Tsai, F.Y.; Chen, S.H.; Gram, R.Q.; Harding, D.R. [Univ. of Rochester, NY (United States). Lab. for Laser Energetics

    1999-03-01

    Hollow polyimide shells, for use as ICF targets, were fabricated by co-depositing monomer precursors from the vapor phase onto bounced spherical mandrels. The process involved two stages: first, the deposited monomers (pyromellitic dianhydride and 4,4{prime}-oxydianiline) reacted on the mandrel surface to form polyamic acid; second, the mandrel was heated to 300 C to imidize the polyamic acid and to decompose the mandrel. During this latter process the decomposed mandrel diffused through the thermally stable coating, leaving a polyimide shell. Depositions were performed under low ({approximately}10{sup {minus}3} Torr) and high ({approximately}10{sup {minus}6} Torr) vacuum. Also, flat witness films of polyimide deposited on Si wafers and NaCl allowed the mechanical properties and chemical composition of the film during the heating cycle to be measured. Polyimide shells with diameters ranging from 700 to 950 {micro}m and wall thicknesses ranging from 2 to 13 {micro}m were produced. The shell`s sphericity was greater than 99%. Burst and buckle pressure tests on these shells yielded the estimated mechanical strength properties. The elastic modulus and tensile strength were {approximately}15 GPa and {approximately}300 MPa, respectively. The permeability of D{sub 2} through polyamic acid at 25 C was 7.4 {times} 10{sup {minus}17} mol{center_dot}m/m{sup 2}{center_dot}Pa{center_dot}s and increased to 6.4 {times} 10{sup {minus}16} mol{center_dot}m/m{sup 2}{center_dot}Pa{center_dot}s at 25 C upon curing the shell to 150 C. The permeability of D{sub 2} at 25 C through vapor-deposited polyimide flat films was measured to be 240 times greater than through the as-deposited polyamic acid, and about 7 times greater than through commercially available solution-cast Kapton.

  16. TREATMENT OF PRODUCED WATERS USING A SURFACTANT MODIFIED ZEOLITE/VAPOR PHASE BIOREACTOR SYSTEM

    Energy Technology Data Exchange (ETDEWEB)

    Lynn E. Katz; Kerry A. Kinney; R.S. Bowman; E.J. Sullivan

    2003-04-01

    Co-produced water from the oil and gas industry accounts for a significant waste stream in the United States. It is by some estimates the largest single waste stream in the country, aside from nonhazardous industrial wastes. Characteristics of produced water include high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component, and chemicals added during the oil-production process. While most of the produced water is disposed via reinjection, some of them must be treated to remove organic constituents before the water is discharged. Current treatment options are successful in reducing the organic content; however, they cannot always meet the levels of current or proposed regulations for discharged water. Therefore, an efficient, cost-effective treatment technology is needed. Surfactant-modified zeolite (SMZ) has been used successfully to treat contaminated ground water for organic and inorganic constituents. In addition, the low cost of natural zeolites makes their use attractive in water-treatment applications. Our previous DOE research work (DE-AC26-99BC15221) demonstrated that SMZ could successfully remove BTEX compounds from the produced water. In addition, SMZ could be regenerated through a simple air sparging process. The primary goal of this project is to develop a robust SMZ/VPB treatment system to efficiently remove the organic constituents from produced water in a cost-effective manner. This report summarizes work of this project from October 2002 to March 2003. In this starting stage of this study, we have continued our investigation of SMZ regeneration from our previous DOE project. Two saturation/stripping cycles have been completed for SMZ columns saturated with BTEX compounds. Preliminary results suggest that BTEX sorption actually increases with the number of saturation/regeneration cycles. Furthermore, the experimental vapor phase bioreactors for this project have been designed and are

  17. Desalination of water by vapor-phase transport through hydrophobic nanopores

    Science.gov (United States)

    Lee, Jongho; Karnik, Rohit

    2010-08-01

    We propose a new approach to desalination of water whereby a pressure difference across a vapor-trapping nanopore induces selective transport of water by isothermal evaporation and condensation across the pore. Transport of water through a nanopore with saline water on one side and pure water on the other side under a pressure difference was theoretically analyzed under the rarefied gas assumption using a probabilistic framework that accounts for diffuse scattering from the pore walls as well as reflection from the menisci. The analysis revealed that in addition to salinity, temperature, and pressure difference, the nanopore aspect ratio and the probability of condensation of a water molecule incident on a meniscus from the vapor phase, known as the condensation coefficient, are key determinants of flux. The effect of condensation coefficient on mass flux becomes critical when the aspect ratio is small. However, the mass flux becomes independent of the condensation coefficient as the pore aspect ratio increases, converging to the Knudsen flux for long nanopores. For design of a nanopore membrane that can trap vapor, a minimum aspect ratio is derived for which coalescence of the two interfaces on either side of the nanopore remains energetically unfavorable. Based on this design criterion, the analysis suggests that mass flux in the range of 20-70 g/m2 s may be feasible if the system is operated at temperatures in the range of 30-50 °C. The proposed approach further decouples transport properties from material properties of the membrane, which opens the possibility of engineering membranes with appropriate materials that may lead to reverse osmosis membranes with improved flux, better selectivity, and high chlorine resistance.

  18. Simplified efficient phosphorescent organic light-emitting diodes by organic vapor phase deposition

    Science.gov (United States)

    Pfeiffer, P.; Beckmann, C.; Stümmler, D.; Sanders, S.; Simkus, G.; Heuken, M.; Vescan, A.; Kalisch, H.

    2017-12-01

    The most efficient phosphorescent organic light-emitting diodes (OLEDs) are comprised of complex stacks with numerous organic layers. State-of-the-art phosphorescent OLEDs make use of blocking layers to confine charge carriers and excitons. On the other hand, simplified OLEDs consisting of only three organic materials have shown unexpectedly high efficiency when first introduced. This was attributed to superior energy level matching and suppressed external quantum efficiency (EQE) roll-off. In this work, we study simplified OLED stacks, manufactured by organic vapor phase deposition, with a focus on charge balance, turn-on voltage (Von), and efficiency. To prevent electrons from leaking through the device, we implemented a compositionally graded emission layer. By grading the emitter with the hole transport material, charge confinement is enabled without additional blocking layers. Our best performing organic stack is composed of only three organic materials in two layers including the emitter Ir(ppy)3 and yields a Von of 2.5 V (>1 cd/m2) and an EQE of 13% at 3000 cd/m2 without the use of any additional light extraction techniques. Changes in the charge balance, due to barrier tuning or adjustments in the grading parameters and layer thicknesses, are clearly visible in the current density-voltage-luminance (J-V-L) measurements. As charge injection at the electrodes and organic interfaces is of great interest but difficult to investigate in complex device structures, we believe that our simplified organic stack is not only a potent alternative to complex state-of-the-art OLEDs but also a well suited test vehicle for experimental studies focusing on the modification of the electrode-organic semiconductor interface.

  19. Advanced Life Support Water Recycling Technologies Case Studies: Vapor Phase Catalytic Ammonia Removal and Direct Osmotic Concentration

    Science.gov (United States)

    Flynn, Michael

    2004-01-01

    Design for microgravity has traditionally not been well integrated early on into the development of advanced life support (ALS) technologies. NASA currently has a many ALS technologies that are currently being developed to high technology readiness levels but have not been formally evaluated for microgravity compatibility. Two examples of such technologies are the Vapor Phase Catalytic Ammonia Removal Technology and the Direct Osmotic Concentration Technology. This presentation will cover the design of theses two systems and will identify potential microgravity issues.

  20. Adsorptive water removal from dichloromethane and vapor-phase regeneration of a molecular sieve 3A packed bed

    OpenAIRE

    Jovic, S Slavisa; Laxminarayan, Y; Keurentjes, JTF Jos; Schouten, JC Jaap; Schaaf, van der, S.

    2017-01-01

    The drying of dichloromethane with a molecular sieve 3A packed bed process is modeled and experimentally verified. In the process, the dichloromethane is dried in the liquid phase and the adsorbent is regenerated by water desorption with dried dichloromethane product in the vapor phase. Adsorption equilibrium experiments show that dichloromethane does not compete with water adsorption, because of size exclusion; the pure water vapor isotherm from literature provides an accurate representation...

  1. The effect of heated vapor-phase acidification on organic carbon concentrations and isotopic values in geologic rock samples

    Science.gov (United States)

    Wang, R. Z.; West, A. J.; Yager, J. A.; Rollins, N.; Li, G.; Berelson, W.

    2016-12-01

    Carbon signatures recorded in the modern and geologic rock record can give insight on the Earth's carbon cycle through time. This is especially true for organic carbon (OC), which can help us understand how the biosphere has evolved over Earth's history. However, carbon recorded in rocks is a combination of OC and inorganic carbon (IC) mostly in the form of carbonate minerals. To measure OC, IC must therefore first be removed through a process called "decarbonation." This is often done through a leaching process with hydrochloric acid (HCl). However, three well known problems exist for the decarbonation process: 1) Incomplete removal of IC, 2) Unintentional removal of OC, and 3) Addition of false carbon blank. Currently, vapor (gas) phase removal of OC is preferred to liquid phase treatment because it has been shown that OC is lost to solubilization during liquid phase acidification. Vapor phase treatment is largely thought to avoid the problem of OC loss, but this has not yet been rigorously investigated. This study investigates that assumption and shows that vapor phase treatment can cause unintentional OC loss. We show that vapor phase treatment must be sensitive to rock type and treatment length to produce robust OC isotopic measurements and concentrations.

  2. Simultaneous Determination of Furan and Vinyl Acetate in Vapor Phase of Mainstream Cigarette Smoke by GC-MS

    Directory of Open Access Journals (Sweden)

    AIFEI XU

    Full Text Available ABSTRACT A simple and sensitive method for simultaneous determination of furan and vinyl acetate (VA in vapor phase of mainstream cigarette smoke with cold trap and gas chromatography-mass spectrometry (GC-MS was developed. A Cambridge filter pad (CFP was placed in front of the impingers of smoking machine to remove the particle phase from cigarette smoke. Furan and VA in vapor phase of mainstream cigarette smoke were collected in two impingers connected in series by filled with methanol at -78°C. The solutions were added with deuterium-labeled furan-d4 and VA-d6 as internal standards and analyzed by GC-MS. The results showed that the calibration curves for furan and VA were linear (r2 > 0.9995 over the studied concentration range. The intra- and inter-day precision values for furan and VA were <7.07% and <9.62%, respectively. The extraction recoveries of furan and VA were in the range of 94.5-97.7% and 92.3-94.9%, respectively. Moreover, the limits of detection for furan and VA were 0.028 µg mL-1 and 1.3 ng mL-1, respectively. The validated method has been successfully applied to determine the emissions of furan and VA in the vapor phase of mainstream cigarette smoke under International Organization for Standardization (ISO and Canadian Intense (CI smoking regimen.

  3. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    Energy Technology Data Exchange (ETDEWEB)

    Ha, Neul; Kuroda, Takashi [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Graduate School of Engineering, Kyushu University, NIMS, Tsukuba 305-0044 (Japan); Liu, Xiangming; Mano, Takaaki, E-mail: mano.takaaki@nims.go.jp; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Castellano, Andrea [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan); Dip. di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I-20125 Milano (Italy); Sanguinetti, Stefano [Dip. di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I-20125 Milano (Italy)

    2014-04-07

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C{sub 3v} symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks.

  4. The growth and the electrical properties of epitaxial CrSi sub 2 films prepared on Si(111) substrates

    CERN Document Server

    Kim, K H; Lee, J J; Choi, C K; Lee, J Y; Lee, Y P

    1998-01-01

    About a 290-A-thick CrSi sub 2 film was epitaxially grown on a Si(111) substrate by Cr deposition on a Si(111)-7x7 substrate at approx 450 .deg. C followed by in suit annealing at approx 1000 .deg . C for 10 min. X-ray diffraction and transmission electron microscopy showed that the CrSi sub 2 (001) plane grew parallel to the Si(111) plane with a CrSi sub 2 llSi matching face relationship. CrSi sub 2 is a p-type degenerate semiconductor. The electrical resistivity at room temperature was approx 5 x approx 10 sup - sup 3 OMEGA cm, and the energy band gap deduced from the temperature dependence of resistivity was approx 0.3 eV.

  5. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  6. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2vertical bilayer p-n junctions.

    Science.gov (United States)

    Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

    2017-12-04

    High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

  7. Growth of metal-organic framework HKUST-1 in capillary using liquid-phase epitaxy for open-tubular capillary electrochromatography and capillary liquid chromatography.

    Science.gov (United States)

    Bao, Tao; Zhang, Juan; Zhang, Wenpeng; Chen, Zilin

    2015-02-13

    Much attention is being paid to applying metal-organic frameworks (MOFs) as stationary phases in chromatography because of their fascinating properties, such as large surface-to-volume ratios, high levels of porosity, and selective adsorption. HKUST-1 is one of the best-studied face-centered-cubic MOF containing nano-sized channels and side pockets for film growth. However, growth of HKUST-1 framework inside capillary column as stationary phase for capillary electrochromatography is a challenge work. In this work, we carry out the growth of HKUST-1 on the inner wall of capillary by using liquid-phase epitaxy process at room temperature. The fabricated HKUST-1@capillary can be successfully used for the separation of substituted benzene including methylbenzene, ethylbenzene, styrene, chlorobenzene, bromobenzene, o-dichlorobenzene, benzene series, phenolic acids, and benzoic acids derivates. High column efficiency of 1.5×10(5) N/m for methylbenzene was achieved. The formation of HKUST-1 grown in the capillary was confirmed and characterized by scanning electron microscopy images, Fourier transform infrared spectra and X-ray diffraction. The column showed long lifetime and excellent stability. The relative standard deviations for intra-day and inter-day repeatability of the HKUST-1@capillary were lower than 7%. Copyright © 2015 Elsevier B.V. All rights reserved.

  8. HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process

    Science.gov (United States)

    Pons, M.; Su, J.; Chubarov, M.; Boichot, R.; Mercier, F.; Blanquet, E.; Giusti, G.; Pique, D.

    2017-06-01

    The different steps of the fabrication of epitaxial AlN films (0.5-20 μm) by high temperature chemical vapor deposition called also HVPE (Hydride Vapor Phase Epitaxy) are reviewed (i) by thermodynamic modeling to analyze reactions in the chlorination chamber, (ii) by multicomponent heat and mass transport for a better knowledge of actual supersaturation of gas species above the substrate, (iii) by simple mechanical modeling to analyze the different source of stress during growth and (iv) by level set methods to represent the interface evolution at the micrometric level on patterned substrates. The evaluation of thin films is discussed in the light of modeling results. The joint use of the different modeling approaches allowed the quantification, for a 2″ substrate, of (i) the optimum temperature for the chlorination chamber (500 °C) to avoid AlCl specie formation, (ii) the transport of the main species AlCl3 diluted in NH3 and H2 and (iii) the actual supersaturation at the growth interface on 2D surfaces or 3D patterned surfaces to promote lateral epitaxial overgrowth and improve crystalline quality. Finally, the upscaling from 2″ to 4″ substrates is computed and validated.

  9. Growth and characterization of Ge nano-structures on Si(113) by adsorbate-mediated epitaxy; Wachstum und Charakterisierung von Ge-Nanostrukturen auf Si(113) durch Adsorbat-modifizierte Epitaxie

    Energy Technology Data Exchange (ETDEWEB)

    Clausen, T.

    2006-11-15

    In the work presented here Ge nano-structures on Si(113) substrates have been grown by adsorbate-mediated epitaxy at sample temperatures between 400 C and 700 C. The Ge nano-islands and nano-layers have been investigated regarding their atomic reconstruction, morphology, strain state, chemical composition and defect structure. Various in-situ and ex-situ experimental techniques have been used, as there are low-energy electron diffraction, low-energy electron microscopy, X-ray photoemission electron microscopy, spot profile analysis low-energy electron diffraction, grazing incidence X-ray diffraction, scanning tunneling microscopy, atomic force microscopy, scanning electron microscopy and transmission electron microscopy. On a clean Si(113) surface Ge preferentially nucleates at surface step edges and forms a wetting layer exhibiting a Ge-(2 x 2) surface reconstruction. With increasing growth temperature the Ge islands are elongated in the [33 anti 2] direction. Simultaneously, the average island size increases with decreasing island density. From the Arrhenius-like behaviour of the island density, a Ge adatom diffusion barrier height of about 0.53 eV is deduced. At 600 C the Si concentration of the islands amounts to about 41% and the residual lattice strain of the islands is found to about 23 %. The adsorption of Gallium on a clean Si(113) substrate leads to the formation of well ordered surface facets in the [1 anti 10] direction with a periodicity of about 43 nm in the [33 anti 2] direction. From reciprocal space maps in different ({kappa} {sub perpendicular} {sub to} -{kappa} {sub parallel}) planes both facet angles are determined to be about 9.8 with respect to the [113] direction. Thus the facet orientations are identified to be (112) and (115), showing (6 x 1) and (4 x 1) surface reconstructions, respectively. Ge deposition on the faceted Si(113) leads to a high density of ordered 3D Ge nano-islands beaded at the surface facets. The size of these islands is

  10. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Antony, Aldrin [Department of Applied Physics and Optics, University of Barcelona, Barcelona (Spain); Department of Energy Science and Engineering, IIT Bombay, Mumbai (India); Rojas, Fredy [Department of Applied Physics and Optics, University of Barcelona, Barcelona (Spain)

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  11. Treatment of Produced Water Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    Energy Technology Data Exchange (ETDEWEB)

    Lynn E. Katz; Kerry A. Kinney; Robert S. Bowman; Enid J. Sullivan; Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Craig R. Altare

    2006-01-31

    Co-produced water from the oil and gas industry accounts for a significant waste stream in the United States. Produced waters typically contain a high total dissolved solids content, dissolved organic constituents such as benzene and toluene, an oil and grease component as well as chemicals added during the oil-production process. It has been estimated that a total of 14 billion barrels of produced water were generated in 2002 from onshore operations (Veil, 2004). Although much of this produced water is disposed via reinjection, environmental and cost considerations can make surface discharge of this water a more practical means of disposal. In addition, reinjection is not always a feasible option because of geographic, economic, or regulatory considerations. In these situations, it may be desirable, and often necessary from a regulatory viewpoint, to treat produced water before discharge. It may also be feasible to treat waters that slightly exceed regulatory limits for re-use in arid or drought-prone areas, rather than losing them to reinjection. A previous project conducted under DOE Contract DE-AC26-99BC15221 demonstrated that surfactant modified zeolite (SMZ) represents a potential treatment technology for produced water containing BTEX. Laboratory and field experiments suggest that: (1) sorption of benzene, toluene, ethylbenzene and xylenes (BTEX) to SMZ follows linear isotherms in which sorption increases with increasing solute hydrophobicity; (2) the presence of high salt concentrations substantially increases the capacity of the SMZ for BTEX; (3) competitive sorption among the BTEX compounds is negligible; and, (4) complete recovery of the SMZ sorption capacity for BTEX can be achieved by air sparging the SMZ. This report summarizes research for a follow on project to optimize the regeneration process for multiple sorption/regeneration cycles, and to develop and incorporate a vapor phase bioreactor (VPB) system for treatment of the off-gas generated during

  12. MOVPE growth of GaN on 6-inch SOI-substrates: effect of substrate parameters on layer quality and strain

    Science.gov (United States)

    Lemettinen, J.; Kauppinen, C.; Rudzinski, M.; Haapalinna, A.; Tuomi, T. O.; Suihkonen, S.

    2017-04-01

    We demonstrate that higher crystalline quality, lower strain and improved electrical characteristics can be achieved in gallium nitride (GaN) epitaxy by using a silicon-on-insulator (SOI) substrate compared to a bulk silicon (Si) substrate. GaN layers were grown by metal-organic vapor phase epitaxy on 6-inch bulk Si and SOI wafers using the standard step graded AlGaN and AlN approach. The GaN layers grown on SOI exhibited lower strain according to x-ray diffraction analysis. Defect selective etching measurements suggested that the use of SOI substrate for GaN epitaxy reduces the dislocation density approximately by a factor of two. Furthermore, growth on SOI substrate allows one to use a significantly thinner AlGaN buffer compared to bulk Si. Synchrotron radiation x-ray topography analysis confirmed that the stress relief mechanism in GaN on SOI epitaxy is the formation of a dislocation network to the SOI device Si layer. In addition, the buried oxide layer significantly improves the vertical leakage characteristics as the onset of the breakdown is delayed by approximately 400 V. These results show that the GaN on the SOI platform is promising for power electronics applications.

  13. Growth and characterization of pendeo-epitaxial GaN (1 1 2¯ 0) on 4H-SiC (1 1 2¯ 0) substrates

    Science.gov (United States)

    Wagner, B. P.; Reitmeier, Z. J.; Park, J. S.; Bachelor, D.; Zakharov, D. N.; Liliental-Weber, Z.; Davis, R. F.

    2006-05-01

    Growth on AlN/4H-SiC (1 1 2¯ 0) substrates of coalesced, non-polar GaN (1 1 2¯ 0) films having volumes of material with reduced densities of dislocations and stacking faults has been achieved from etched stripes via the statistical and experimental determination of the effect of temperature and V/III ratio on the lateral and vertical growth rates of the GaN{0 0 0 1} faces combined with pendeo-epitaxy. AFM of the uncoalesced GaN(0 0 0 1) and GaN (0 0 0 1¯) vertical faces revealed growth steps with some steps terminating at dislocations on the former and a pitted surface without growth steps, indicative of decomposition, on the latter. Coalescence was achieved via (a) a two-step route and the parameters of (1) T=1100 °C and V/III=1323 for 40 min and (2) 1020 °C and V/III=660 for 40 min and (b) a one-step route that employed T=1020 °C and a V/III ratio=660 for 6 h. The densities of dislocations in the GaN grown vertically over and laterally from the (1 1 2¯ 0) stripes were ˜4×10 10 cm -2 and ˜2×10 8 cm -2, respectively; the densities of stacking fault in these volumes were ˜1×10 6 cm -1 and ˜2×10 4 cm -1, respectively. The defects in the wing material were observed primarily at the bottom of the film where lateral growth of the GaN occurred from the AlN and the SiC. Plan view AFM also revealed different microstructures and a reduction in the RMS roughness values from 1.2 to 0.95 nm in these respective regions.

  14. Molecular-beam epitaxial growth of tensile-strained and n-doped Ge/Si(001) films using a GaP decomposition source

    Energy Technology Data Exchange (ETDEWEB)

    Luong, T.K.P. [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); Ghrib, A. [Institut d' Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Bât. 220, F-91405 Orsay (France); Dau, M.T.; Zrir, M.A. [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); Stoffel, M. [Université de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy-Université, BP 70239, F-54506 Vandoeuvre-lès-Nancy Cedex (France); Le Thanh, V., E-mail: lethanh@cinam.univ.mrs.fr [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); Daineche, R. [Aix-Marseille Université, CNRS IM2NP-UMR 6242, F-13397 Marseille Cedex 20 (France); Le, T.G.; Heresanu, V.; Abbes, O.; Petit, M. [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); El Kurdi, M.; Boucaud, P. [Institut d' Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Bât. 220, F-91405 Orsay (France); Rinnert, H. [Université de Lorraine, Institut Jean Lamour, UMR CNRS 7198, Nancy-Université, BP 70239, F-54506 Vandoeuvre-lès-Nancy Cedex (France); Murota, J. [Res. Inst. Elec. Comm., Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2014-04-30

    We have combined numerous characterization techniques to investigate the growth of tensile-strained and n-doped Ge films on Si(001) substrates by means of solid-source molecular-beam epitaxy. The Ge growth was carried out using a two-step growth method: a low-temperature growth to produce strain relaxed and smooth buffer layers, followed by a high-temperature growth to get high crystalline quality Ge layers. It is shown that the Ge/Si Stranski–Krastanov growth mode can be completely suppressed when the growth is performed at substrate temperatures ranging between 260 °C and 300 °C. X-ray diffraction measurements indicate that the Ge films grown at temperatures of 700–770 °C are tensile-strained with typical values lying in the range of 0.22–0.24%. Cyclic annealing allows further increase in the tensile strain up to 0.30%, which represents the highest value ever reported in the Ge/Si system. n-Doping of Ge was carried out using a GaP decomposition source. It is shown that heavy n-doping levels are obtained at low substrate temperatures (210–250 °C). For a GaP source temperature of 725 °C and a substrate temperature of 210 °C, a phosphorus concentration of about 10{sup 19} cm{sup −3} can be obtained. Photoluminescence measurements reveal an intensity enhancement of about 16 times of the direct band gap emission and display a redshift of 25 meV that can be attributed to band gap narrowing due to a high n-doping level. Finally, we discuss about growth strategies allowing optimizing the Ge growth/doping process for optoelectronic applications. - Highlights: • We investigate the effect of tensile strain and n-doping on Ge optical properties. • We show that cyclic annealing allows getting a tensile strain up to 0.30% in Ge. • n-Doping of Ge/Si films is performed using a GaP decomposition source. • We show that n-doping is more important to enhance the photoluminescence intensity. • We present new growth strategies to develop Ge

  15. Epitaxial Growth of MOF Thin Film for Modifying the Dielectric Layer in Organic Field-Effect Transistors.

    Science.gov (United States)

    Gu, Zhi-Gang; Chen, Shan-Ci; Fu, Wen-Qiang; Zheng, Qingdong; Zhang, Jian

    2017-03-01

    Metal-organic framework (MOF) thin films are important in the application of sensors and devices. However, the application of MOF thin films in organic field effect transistors (OFETs) is still a challenge to date. Here, we first use the MOF thin film prepared by a liquid-phase epitaxial (LPE) approach (also called SURMOFs) to modify the SiO 2 dielectric layer in the OFETs. After the semiconductive polymer of PTB7-Th (poly[4,8-bis(5-(2-ethylhexyl)thiophene-2-yl)benzo[1,2-b:4,5-b']dithiophene-co-3-fluorothieno[3,4-b]thiophene-2-carboxylate]) was coated on MOF/SiO 2 and two electrodes on the semiconducting film were deposited sequentially, MOF-based OFETs were fabricated successfully. By controlling the LPE cycles of SURMOF HKUST-1 (also named Cu 3 (BTC) 2 , BTC = 1,3,5-benzenetricarboxylate), the performance of the HKUST-1/SiO 2 -based OFETs showed high charge mobility and low threshold voltage. This first report on the application of MOF thin film in OFETs will offer an effective approach for designing a new kind of materials for the OFET application.

  16. Growth and electro-optical characterization of ZnMgTe/ZnTe waveguide by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Sun, W.; Nakasu, T.; Taguri, K.; Aiba, T.; Yamashita, S. [Department of Electrical Engineering, Waseda University, Tokyo (Japan); Kobayashi, M. [Department of Electrical Engineering, Waseda University, Tokyo (Japan); Laboratory of Materials Science and Technology, Waseda University, Tokyo (Japan); Togo, H. [Nippon Telegraph and Telephone Corporation, Atsugi (Japan); Asahi, T. [JX Nippon Oil and Energy, Hitachi (Japan)

    2014-07-15

    ZnMgTe/ZnTe/ZnMgTe thin film waveguide with high crystal quality were grown by molecular beam epitaxy (MBE). The in-plane mismatch between the ZnMgTe cladding layers and ZnTe core layer was about 0.02% which was measured by X-ray reciprocal space mapping (RSM). It indicated that films were grown coherently with high crystal quality. The Electro-Optical characterization of waveguide was evaluated using 1.55 μm polarized lights and bias applied on the waveguide device from -15 V to +15 V. The dependence of light phase shift passed though the waveguide on the applied voltage bias was studied. The electro-optical characterization of the waveguide device was about 7% of the theoretical calculation. It could be improved by increasing the resistance ratio between the ZnMgTe/ZnTe/ZnMgTe waveguide structure and substrate so that the electric field applied on the waveguide structure could be improved. It was indicated that the ZnMgTe/ZnTe/ZnMgTe thin film waveguide has the potential to become a high efficiency electro-optical device. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Growth, structure, surface topography and magnetic properties of GdMnO3 multiferroic epitaxial thin films

    Directory of Open Access Journals (Sweden)

    Mukovskii Ya.

    2013-01-01

    Full Text Available Epitaxial GdMnO3 thin films were grown in various regimes on (001 NdGaO3 and (001 SrTiO3 substrates by RF magnetron sputtering. X-ray analysis revealed that the films grown at a substrate temperature of 650-900 °C are single phase (GdMnO3 with orthorhombic Pbnm structure. Films grown on NdGaO3 substrates at lower temperature (750 °C reveal two orientations, i.e. GdMnO3(001||NdGaO3(001 and GdMnO3(110||NdGaO3(001. These results are confirmed by transmission electron microscopy. Films grown on SrTiO3 substrates have two orientations, i.e. GdMnO3(001||SrTiO3(001 and GdMnO3(110||SrTiO3(001, in the whole temperature range in which the phase exists. Using atomic force microscopy the correlation between the topography of the films and their crystallographic structure was studied. The magnetic properties of the films differ from those of bulk samples and revealed spin-glass behavior.

  18. Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE.

    Science.gov (United States)

    Krishna, Shibin; Aggarwal, Neha; Mishra, Monu; Maurya, K K; Singh, Sandeep; Dilawar, Nita; Nagarajan, Subramaniyam; Gupta, Govind

    2016-03-21

    The relationship of the growth temperature with stress, defect states, and electronic structure of molecular beam epitaxy grown GaN films on c-plane (0001) sapphire substrates is demonstrated. A minimum compressively stressed GaN film is grown by tuning the growth temperature. The correlation of dislocations/defects with the stress relaxation is scrutinized by high-resolution X-ray diffraction and photoluminescence measurements which show a high crystalline quality with significant reduction in the threading dislocation density and defect related bands. A substantial reduction in yellow band related defect states is correlated with the stress relaxation in the grown film. Temperature dependent Raman analysis shows the thermal stability of the stress relaxed GaN film which further reveals a downshift in the E2 (high) phonon frequency owing to the thermal expansion of the lattice at elevated temperatures. Electronic structure analysis reveals that the Fermi level of the films is pinned at the respective defect states; however, for the stress relaxed film it is located at the charge neutrality level possessing the lowest electron affinity. The analysis demonstrates that the generated stress not only affects the defect states, but also the crystal quality, surface morphology and electronic structure/properties.

  19. Effects of RF plasma parameters on the growth of InGaN/GaN heterostructures using plasma-assisted molecular beam epitaxy

    CERN Document Server

    Shim Kyu Ha; Kim, K H; Hong, S U; Cho, K I; Lee, H G; Kim, J

    1999-01-01

    The effects of rf plasma power on the structural/optical properties of GaN-based nitride epilayers grown by plasma-assisted molecular beam epitaxy have been investigated. Atomic force microscopy and high-resolution x-ray diffraction analyses revealed that the sharp interface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N/GaN heterostructures could be obtained by suppressing the surface roughening at high rf power. photoluminescence data suggest that the formation of damaged subsurface due to energetic particles was alleviated in the InGaN growth in comparison with the GaN growth. In our experimental set-up, the rf power of 400 W appeared to properly suppress the 3D island formation without causing defects at the subsurface of In sub 0 sub . sub 2 Ga sub 0 sub . sub 8 N. The phenomena associated with the indium incorporation could be explained by an inequality with two kinetic processes of the surface diffusion and the plasma stimulated desorption.

  20. Effects of in situ annealing of GaAs(100) substrates on the subsequent growth of InAs quantum dots by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Morales-Cortes, H; Mejia-Garcia, C [Escuela Superior de Fisica y Matematicas del IPN, UPALM, Edif. 9, Col. Lindavista, Mexico DF 07738 (Mexico); Mendez-GarcIa, V H; Vazquez-Cortes, D [Coordinacion para la Innovacion y la Aplicacion de la Ciencia y la TecnologIa, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis PotosI, S L P 78000 (Mexico); Rojas-Ramirez, J S; Contreras-Guerrero, R; RamIrez-Lopez, M; Martinez-Velis, I; Lopez-Lopez, M, E-mail: mlopez@fis.cinvestav.mx [Physics Department, Centro de Investigacion y de Estudios Avanzados del IPN, Apartado Postal 14-740, Mexico DF 07000 (Mexico)

    2010-04-02

    In the present work, we study the growth by molecular beam epitaxy of InAs self-assembling quantum dots (SAQDs) on GaAs(100) substrates subjected to an in situ annealing treatment. The annealing process consists of the exposition of the GaAs buffer layer surface to high temperatures for a few seconds with the shutter of an arsenic Knudsen cell closed. The purpose of the annealing is to obtain a better uniformity of the SAQD sizes. In our study we prepared different samples using the Stranski-Krastanov growth method to obtain InAs/GaAs(100) quantum dot samples with different annealing times and temperatures. Their structural and optical properties were studied by reflection high-energy electron diffraction (RHEED), high-resolution scanning electron microscopy (HRSEM), atomic force microscopy (AFM), and photoreflectance spectroscopy (PR). According to the results of AFM and HRSEM, by the thermal treatment we obtained a better distribution of quantum dot sizes in comparison with a reference sample with no treatment. The PR spectra from 0.9 to 1.35 eV presented two transitions associated with SAQDs. The energy transitions were obtained by fitting the PR spectra using the third derivative model.

  1. A benchmark of co-flow and cyclic deposition/etch approaches for the selective epitaxial growth of tensile-strained Si:P

    Science.gov (United States)

    Hartmann, J. M.; Veillerot, M.; Prévitali, B.

    2017-10-01

    We have compared co-flow and cyclic deposition/etch processes for the selective epitaxial growth of Si:P layers. High growth rates, relatively low resistivities and significant amounts of tensile strain (up to 10 nm min-1, 0.55 mOhm cm and a strain equivalent to 1.06% of substitutional C in Si:C layers) were obtained at 700 °C, 760 Torr with a co-flow approach and a SiH2Cl2 + PH3 + HCl chemistry. This approach was successfully used to thicken the sources and drains regions of n-type fin-shaped Field Effect Transistors. Meanwhile, the (Si2H6 + PH3/HCl + GeH4) CDE process evaluated yielded at 600 °C, 80 Torr even lower resistivities (0.4 mOhm cm, typically), at the cost however of the tensile strain which was lost due to (i) the incorporation of Ge atoms (1.5%, typically) into the lattice during the selective etch steps and (ii) a reduction by a factor of two of the P atomic concentration in CDE layers compared to that in layers grown in a single step (5 × 1020 cm-3 compared to 1021 cm-3).

  2. LPE-like growth of YIG ferrimagnetic thin films by pulsed laser ablation with molten droplets

    Science.gov (United States)

    Morimoto, A.; Maeda, Y.; Minamikawa, T.; Yonezawa, Y.; Shimizu, T.

    Yttrium iron garnet (YIG) films were grown by pulsed laser ablation (PLA) on (111) Gadolinium Gallium Garnet (GGG) substrates. The second harmonic of YAG laser (532 nm) with a high laser fluence was employed to produce YIG droplets efficiently. It was found that YIG films prepared at RT substrates have a large number of solidified droplets of various sizes. Highly oriented YIG crystals were grown on the (111) GGG substrate heated at 860 °C by PLA using a large number of molten droplets, suggesting an LPE-like growth. This YIG film shows a small ferrimagnetic resonance linewidth of 7.5 Oe. This value is quite small for films prepared by vapor-phase epitaxy techniques.

  3. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  4. Epitaxial growth of homogeneous single-crystalline AlN films on single-crystalline Cu (1 1 1) substrates

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Liu, Zuolian; Lin, Yunhao; Zhou, Shizhong; Qian, Huirong; Gao, Fangliang; Yang, Hui; Li, Guoqiang

    2014-03-01

    The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (1 1 1) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (1 1 1) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (1 1 1) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within ∼321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes.

  5. Treatment of Produced Waters Using a Surfactant Modified Zeolite/Vapor Phase Bioreactor System

    Energy Technology Data Exchange (ETDEWEB)

    Soondong Kwon; Elaine B. Darby; Li-Jung Chen; Lynn E. Katz; Kerry A. Kinney; R. S. Bowman; E. J. Sullivan

    2005-03-11

    second residence time, the GAC bed reduced peak contaminant concentrations by 97%. After the initial peak, the inlet VOC concentration in the SMZ regeneration gas stream drops exponentially with time. During this period, the contaminants on the GAC subsequently desorbed at a nearly steady rate over the next 45 hours resulting in a relatively steady effluent concentration of approximately 25 ppm{sub v}. This lower concentration is readily degradable by a downstream vapor phase biofilter (VPB) and the steady nature of the feed stream will prevent the biomass in the VPB from enduring starvation conditions between SMZ regeneration cycles. Repetitive sorption and desorption cycles that would be expected in the field were also investigated. It was determined that although the GAC initially lost some VOC sorption capacity, the adsorption and desorption profiles stabilized after approximately 6 cycles indicating that a GAC bed should be suitable for continuous operation. In preparation for the pilot field testing of the SMZ/VPB system, design, ''in-house'' construction and testing of the field system were completed during this project period. The design of the SMZ system for the pilot test was based on previous investigations by the PI's in Wyoming, 2002 and on analyses of the produced water at the field site in New Mexico. The field tests are scheduled for summer, 2005. A cost survey, feasibility of application and cost analyses were completed to investigate the long term effectiveness of the SMZ/VPB system as a method of treating produced water for re-use. Several factors were investigated, including: current costs to treat and dispose of produced water, end-use water quality requirements, and state and federal permitting requirements.

  6. Identification of vapor-phase chemical warfare agent simulants and rocket fuels using laser-induced breakdown spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Stearns, Jaime A.; McElman, Sarah E.; Dodd, James A.

    2010-05-01

    Application of laser-induced breakdown spectroscopy (LIBS) to the identification of security threats is a growing area of research. This work presents LIBS spectra of vapor-phase chemical warfare agent simulants and typical rocket fuels. A large dataset of spectra was acquired using a variety of gas mixtures and background pressures and processed using partial least squares analysis. The five compounds studied were identified with a 99% success rate by the best method. The temporal behavior of the emission lines as a function of chamber pressure and gas mixture was also investigated, revealing some interesting trends that merit further study.

  7. Universal Growth Scheme for Quantum Dots with Low Fine-Structure Splitting at Various Emission Wavelengths

    Science.gov (United States)

    Skiba-Szymanska, Joanna; Stevenson, R. Mark; Varnava, Christiana; Felle, Martin; Huwer, Jan; Müller, Tina; Bennett, Anthony J.; Lee, James P.; Farrer, Ian; Krysa, Andrey B.; Spencer, Peter; Goff, Lucy E.; Ritchie, David A.; Heffernan, Jon; Shields, Andrew J.

    2017-07-01

    Efficient sources of individual pairs of entangled photons are required for quantum networks to operate using fiber-optic infrastructure. Entangled light can be generated by quantum dots (QDs) with naturally small fine-structure splitting (FSS) between exciton eigenstates. Moreover, QDs can be engineered to emit at standard telecom wavelengths. To achieve sufficient signal intensity for applications, QDs have been incorporated into one-dimensional optical microcavities. However, combining these properties in a single device has so far proved elusive. Here, we introduce a growth strategy to realize QDs with small FSS in the conventional telecom band, and within an optical cavity. Our approach employs ``droplet-epitaxy'' of InAs quantum dots on (001) substrates. We show the scheme improves the symmetry of the dots by 72%. Furthermore, our technique is universal, and produces low FSS QDs by molecular beam epitaxy on GaAs emitting at ˜900 nm , and metal-organic vapor-phase epitaxy on InP emitting at ˜1550 nm , with mean FSS 4 × smaller than for Stranski-Krastanow QDs.

  8. Growth of GaP and AlGaP on GaP(1 1 1)B using gas-source molecular-beam-epitaxy

    Science.gov (United States)

    Barakat, J.-B.; Dadgostar, S.; Hestroffer, K.; Bierwagen, O.; Trampert, A.; Hatami, F.

    2017-11-01

    We present an initial study of the influence of the growth parameters on the surface morphology and on the interface quality of homoepitaxial GaP(1 1 1) and heteroepitaxial GaP/AlGaP(1 1 1) grown on GaP(1 1 1)B substrates using Gas-Source Molecular Beam Epitaxy (GSMBE). Three different surface reconstructions are identified in the RHEED patterns during the growth runs. The Root Mean Square (RMS) surface roughness measured post-growth by AFM ranges from 3 to 10 nm over 10 × 10 μm2 areas, for a film thickness of 100-600 nm. The results of 2θ-ω XRD scans on (1 1 1) and (3 1 1) planes reveal a stacking disorder in the AlGaP layer and further XRD phi-scan measurements on GaP (3 1 1) show strong peaks with 3-fold rotational symmetry and additional of 3-fold weak peaks indicating only a negligible fraction of the twinned crystal orientation in the substrate. TEM images of these samples show a smooth interface between the AlGaP layer and GaP substrate, and reveal the presence of a high density of extended defects such as stacking faults, twinning and dislocations lines in AlGaP layer whereas the GaP layer appears as pure Zinc-Blende. Further TEM analysis reveals composition and local strain variations for GaP/AlGaP samples associated with an undulated surface.

  9. Liquid phase epitaxy growth of bismuth-substituted yttrium iron garnet thin films for magneto-optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Huang Min; Xu Zhichun

    2004-03-01

    The novel Bi-substituted rare-earth iron garnet films were grown by the modified liquid phase epitaxy (LPE) technique for use as a 45 deg. Faraday rotator in optical isolators. First, single crystals of Y{sub 3}Fe{sub 5}O{sub 12} (YIG), with a lattice constant of 1.2378 nm, were grown by means of the Czochralski method. Using the seed crystal of YIG instead of the conventional non-magnetic garnet of Gd{sub 3}Ga{sub 5}O{sub 12} as a substrate, a film of BiYbIG was grown by means of the LPE method from Bi{sub 2}O{sub 3}-B{sub 2}O{sub 3} fluxes. The structural, magnetic and magneto-optical properties of BiYbIG LPE film/YIG crystal composite have been investigated using directional X-ray diffraction, electron probe microanalysis, vibrating sample magnetometer and near-infrared transmission spectrometry. The saturation magnetization 4{pi}M{sub s} has been estimated to be approximately 1200 G. The Faraday rotation spectrum was measured by the method of rotating analyzer ellipsometry with the wavelength varying from 800 to 1700 nm. The resultant Bi{sub 0.37}Yb{sub 2.63}Fe{sub 5}O{sub 12} LPE film/YIG crystal composite showed an increased Faraday rotation coefficient due to doping Bi{sup 3+} ions on the dodecahedral sites of the magnetic garnet without increasing absorption loss, therefore a good magneto-optic figure of merit, defined by the ratio of Faraday rotation and optical absorption loss, has been achieved of 21.5 deg/dB and 30.2 deg/dB at 1300 nm and 1550 nm wavelengths, respectively, at room temperature. Since Yb{sup 3+} ions and Y{sup 3+} ions provide the opposite contributes to the wideband and temperature characteristic of Faraday rotation, the values of Faraday rotation wavelength and temperature coefficients were reduced to 0.06%/nm and 0.007 deg/ deg. C at 1550 nm wavelength, respectively.

  10. Aqueous phase synthesis of upconversion nanocrystals through layer-by-layer epitaxial growth for in vivo X-ray computed tomography

    KAUST Repository

    Li, Feifei

    2013-05-21

    Lanthanide-doped core-shell upconversion nanocrystals (UCNCs) have tremendous potential for applications in many fields, especially in bio-imaging and medical therapy. As core-shell UCNCs are mostly synthesized in organic solvents, tedious organic-aqueous phase transfer processes are usually needed for their use in bio-applications. Herein, we demonstrate the first example of one-step synthesis of highly luminescent core-shell UCNCs in the "aqueous" phase under mild conditions using innocuous reagents. A microwave-assisted approach allowed for layer-by-layer epitaxial growth of a hydrophilic NaGdF4 shell on NaYF4:Yb, Er cores. During this process, surface defects of the nanocrystals could be gradually passivated by the homogeneous shell deposition, resulting in obvious enhancement in the overall upconversion emission efficiency. In addition, the up-down conversion dual-mode luminescent NaYF4:Yb, Er@NaGdF4:Ce, Ln (Eu, Tb, Sm, Dy) nanocrystals were also synthesized to further validate the successful formation of the core-shell structure. More significantly, based on their superior solubility and stability in water solution, high upconversion efficiency and Gd-doped predominant X-ray absorption, the as-prepared NaYF4:Yb, Er@NaGdF4 core-shell UCNCs exhibited high contrast in in vitro cell imaging and in vivo X-ray computed tomography (CT) imaging, demonstrating great potential as multiplexed luminescent biolabels and CT contrast agents.

  11. B12P2: Improved Epitaxial Growth and Evaluation of Alpha Irradiation on its Electrical Transport Properties

    Energy Technology Data Exchange (ETDEWEB)

    Frye, Clint D. [Kansas State Univ., Manhattan, KS (United States)

    2016-10-17

    The wide bandgap (3.35 eV) semiconductor icosahedral boron phosphide (B12P2) has been reported to self-heal from radiation damage from β particles (electrons) with energies up to 400 keV by demonstrating no lattice damage using transmission electron microscopy. This property could be exploited to create radioisotope batteries–semiconductor devices that directly convert the decay energy from a radioisotope to electricity. Such devices potentially have enormous power densities and decades-long lifetimes. To date, the radiation hardness of B12P2 has not been characterized by electrical measurements nor have B12P2 radioisotope batteries been realized. Therefore, this study was undertaken to evaluate the radiation hardness of B12P2 after improving its epitaxial growth, developing ohmic electrical contacts, and reducing the residual impurities. Subsequently, the effects of radiation from a radioisotope on the electrical transport properties of B12P2 were tested.

  12. Effects of growth temperature on high-quality In0.2Ga0.8N layers by plasma-assisted molecular beam epitaxy

    Institute of Scientific and Technical Information of China (English)

    Zhang Dongyan; Zheng Xinhe; Li Xuefei; Wu Yuanyuan; Wang Jianfeng; Yang Hui

    2012-01-01

    High-quality In0.2Ga0.8N epilayers were grown on a GaN template at temperatures of 520 and 580 ℃ via plasma-assisted molecular beam epitaxy.The X-ray rocking curve full widths at half maximum (FWHM) of (10.2)reflections is 936 arcsec for the 50-nm-thick InGaN layers at the lower temperature.When the growth temperature increases to 580 ℃,the FWHM of (00.2) reflections for these samples is very narrow and keeps similar,while significant improvement of(10.2) reflections with an FWHM value of 612 arcsec has been observed.This improved quality in InGaN layers grown at 580 ℃ is also reflected by the much larger size of the crystalline column from the AFM results,stronger emission intensity as well as a decreased FWHM of room temperature PL from 136 to 93.9 meV.

  13. Carrier Lifetimes in Lightly-Doped p-Type 4H-SiC Epitaxial Layers Enhanced by Post-growth Processes and Surface Passivation

    Science.gov (United States)

    Okuda, T.; Miyazawa, T.; Tsuchida, H.; Kimoto, T.; Suda, J.

    2017-11-01

    We investigated limiting factors of carrier lifetimes and their enhancement by post-growth processes in lightly-doped p-type 4H-SiC epitaxial layers ( N A ˜ 2 × 1014 cm-3). We focused on bulk recombination, surface recombination, and interface recombination at the epilayer/substrate, respectively. The carrier lifetime of 2.8 μs in an as-grown epilayer was improved to 10 μs by the combination of VC-elimination processes and hydrogen annealing. By employing surface passivation with deposited SiO2 followed by POCl3 annealing, a long carrier lifetime of 16 μs was obtained in an oxidized epilayer. By investigating carrier lifetimes in a self-standing p-type epilayer, it was revealed that the interface recombination at the epilayer/substrate was smaller than the surface recombination on a bare surface. We found that the VC-elimination process, hydrogen annealing, and surface passivation are all important for improving carrier lifetimes in lightly-doped p-type epilayers.

  14. A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

    Science.gov (United States)

    Sharma, Nandlal; Reuter, Dirk

    2017-11-01

    Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

  15. Growth kinetics of heterostructured GaP-GaAs nanowires.

    Science.gov (United States)

    Verheijen, Marcel A; Immink, George; de Smet, Thierry; Borgström, Magnus T; Bakkers, Erik P A M

    2006-02-01

    We have studied the vapor-liquid-solid (VLS) growth dynamics of GaP and GaAs in heterostructured GaP-GaAs nanowires. The wires containing multiple GaP-GaAs junctions were grown by the use of metal-organic vapor phase-epitaxy (MOVPE) on SiO(2), and the lengths of the individual sections were obtained from transmission electron microscopy. The growth kinetics has been studied as a function of temperature and the partial pressures of the precursors. We found that the growth of the GaAs sections is limited by the arsine (AsH(3)) as well as the trimethylgallium (Ga(CH(3))(3)) partial pressures, whereas the growth of GaP is a temperature-activated, phosphine(PH(3))-limited process with an activation energy of 115 +/- 6 kJ/mol. The PH(3) kinetics obeys the Hinshelwood-Langmuir mechanism, indicating that the dissociation reaction of adsorbed PH(3) into PH(2) and H on the catalytic gold surface is the rate-limiting step for the growth of GaP. In addition, we have studied the competitive thin layer growth on the sidewalls of the nanowires. Although the rate of this process is 2 orders of magnitude lower than the growth rate of the VLS mechanism, it competes with VLS growth and results in tapered nanowires at elevated temperatures.

  16. Epitaxial growth of Fe{sub 3}Si/CaF{sub 2}/Fe{sub 3}Si magnetic tunnel junction structures on CaF{sub 2}/Si(111) by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Ken' ichi [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan); Suemasu, Takashi [Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573 (Japan)], E-mail: suemasu@bk.tsukuba.ac.jp; Kuwano, Noriyuki; Hara, Daisuke [Department of Applied Science for Electronics and Materials, Kyushu University, 6-1 Kasuga, Fukuoka 816-8580 (Japan); Akinaga, Hiroyuki [Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2007-08-15

    The Fe{sub 3}Si(24 nm)/CaF{sub 2}(2 nm)/Fe{sub 3}Si(12 nm) magnetic tunnel junction (MTJ) structures were grown epitaxially on CaF{sub 2}/Si(111) by molecular beam epitaxy (MBE). The 12-nm-thick Fe{sub 3}Si underlayer was grown epitaxially on CaF{sub 2/}Si(111) at approximately 400 deg. C; however, the surface of the Fe{sub 3}Si film was very rough, and thus a lot of pinholes are considered to exist in the 2-nm-thick CaF{sub 2} barrier layer. The average roughness (Ra) of the CaF{sub 2} barrier layer was 7.8 nm. This problem was overcome by low-temperature deposition of Fe and Si at 80 deg. C on CaF{sub 2}/Si(111), followed by annealing at 250 deg. C for 30 min to form the Fe{sub 3}Si layer. The Ra roughness was significantly reduced down to approximately 0.26 nm. A hysteresis loop with coercive field H{sub c} of approximately 25 Oe was obtained in the magnetic field dependence of Kerr rotation at room temperature (RT)

  17. Growth and characterization of high strain InGaAs/GaAs quantum well by molecular beam epitaxy

    Science.gov (United States)

    Shan, Rui; Liu, Yu; Guo, Jie; Wang, Guowei; Xu, Yingqiang

    2016-10-01

    High indium composition InxGa1-xAs/GaAs quantum wells (x˃0.4) in which the well width reached to 7 nm without relaxing were grown on (100) GaAs substrates by MBE. The good crystal quality and optical properties of the high strained InGaAs/GaAs QW were obtained by controlling quasi-2D growth model and optimizing the growth condition including the growth temperature, growth rate, and V/III BEP ratio. Photoluminescence (PL) showed that the cutoff wavelength was about 1.3μm at room temperature with narrow full width at half maximum below 30meV. Dilute nitrogen and high In composition InGaAsN/GaAs QW extended wavelength infrared photodetectors at 1.3 and 1.55 μm were also realized.

  18. Epitaxial growth and properties of cubic WN on MgO(001), MgO(111), and Al{sub 2}O{sub 3}(0001)

    Energy Technology Data Exchange (ETDEWEB)

    Ozsdolay, B.D. [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Mulligan, C.P. [U.S. Army Armament Research Development & Engineering Center, Benet Laboratories, Watervliet, NY 12189 (United States); Guerette, Michael; Huang, Liping [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States); Gall, D., E-mail: galld@rpi.edu [Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)

    2015-09-01

    Tungsten nitride layers, 1.45-μm-thick, were deposited by reactive magnetron sputtering on MgO(001), MgO(111), and Al{sub 2}O{sub 3}(0001) in 20 mTorr N{sub 2} at 700 °C. X-ray diffraction ω-2θ scans, ω-rocking curves, φ scans, and reciprocal space maps show that all layers exhibit a cubic rock salt structure, independent of their N-to-W ratio which ranges from x = 0.83–0.93, as determined by energy dispersive and photoelectron spectroscopies. Growth on MgO(001) leads to an epitaxial WN(001) layer which contains a small fraction of misoriented grains, WN(111)/MgO(111) is an orientation- and phase-pure single-crystal, and WN/Al{sub 2}O{sub 3}(0001) exhibits a 111-preferred orientation containing misoriented cubic WN grains as well as N-deficient BCC W. Layers on MgO(001) and MgO(111) with x = 0.92 and 0.83 have relaxed lattice constants of 4.214 ± 0.005 and 4.201 ± 0.031 Å, respectively, indicating a decreasing lattice constant with an increasing N-vacancy concentration. Nanoindentation provides hardness values of 9.8 ± 2.2, 12.5 ± 1.0, and 10.3 ± 0.4 GPa, and elastic moduli of 240 ± 40, 257 ± 13, and 242 ± 10 GPa for layers grown on MgO(001), MgO(111), and Al{sub 2}O{sub 3}(0001), respectively. Brillouin spectroscopy measurements yield shear moduli of 120 ± 2 GPa, 114 ± 2 GPa and 108 ± 2 GPa for WN on MgO(001), MgO(111) and Al{sub 2}O{sub 3}(0001), respectively, suggesting a WN elastic anisotropy factor of 1.6 ± 0.3, consistent with the indentation results. The combined analysis of the epitaxial WN(001) and WN(111) layers indicate Hill's elastic and shear moduli for cubic WN of 251 ± 17 and 99 ± 8 GPa, respectively. The resistivity of WN(111)/MgO(111) is 1.9 × 10{sup −5} and 2.2 × 10{sup −5} Ω-m at room temperature and 77 K, respectively, indicating weak carrier localization. The room temperature resistivities are 16% and 42% lower for WN/MgO(001) and WN/Al{sub 2}O{sub 3}(0001), suggesting a resistivity decrease with decreasing

  19. Vapor-Phase Stoichiometry and Heat Treatment of CdTe Starting Material for Physical Vapor Transport

    Science.gov (United States)

    Su, Ching-Hua; Sha, Yi-Gao; Lehoczky, S. L.; Liu, Hao-Chieh; Fang, Rei; Brebrick, R. F.

    1998-01-01

    Six batches of CdTe, having total amounts of material from 99 to 203 g and gross mole fraction of Te, X(sub Te), 0.499954-0.500138, were synthesized from pure Cd and Te elements. The vapor-phase stoichiometry of the assynthesized CdTe batches was determined from the partial pressure of Te2, P(sub Te2) using an optical absorption technique. The measured vapor compositions at 870 C were Te-rich for all of the batches with partial pressure ratios of Cd to Te2, P(sub Cd)/P(sub Te2), ranging from 0.00742 to 1.92. After the heat treatment of baking under dynamic vacuum at 870 C for 8 min, the vapor-phase compositions moved toward that of the congruent sublimation, i.e. P(sub Cd)/P(sub Te2) = 2.0, with the measured P(sub Cd)/P(sub Te2) varying from 1.84 to 3.47. The partial pressure measurements on one of the heat-treated samples also showed that the sample remained close to the congruent sublimation condition over the temperature range 800-880 C.

  20. Antibacterial effects of allspice, garlic, and oregano essential oils in tomato films determined by overlay and vapor-phase methods.

    Science.gov (United States)

    Du, W-X; Olsen, C W; Avena-Bustillos, R J; McHugh, T H; Levin, C E; Mandrell, R; Friedman, Mendel

    2009-09-01

    Physical properties as well as antimicrobial activities against Escherichia coli O157:H7, Salmonella enterica, and Listeria monocytogenes of allspice, garlic, and oregano essential oils (EOs) in tomato puree film-forming solutions (TPFFS) formulated into edible films at 0.5% to 3% (w/w) concentrations were investigated in this study. Antimicrobial activities were determined by 2 independent methods: overlay of the film on top of the bacteria and vapor-phase diffusion of the antimicrobial from the film to the bacteria. The results indicate that the antimicrobial activities against the 3 pathogens were in the following order: oregano oil > allspice oil > garlic oil. Listeria monocytogenes was less resistant to EO vapors, while E. coli O157:H7 was more resistant to EOs as determined by both overlay and vapor-phase diffusion tests. The presence of plant EO antimicrobials reduced the viscosity of TPFFS at the higher shear rates, but did not affect water vapor permeability of films. EOs increased elongation and darkened the color of films. The results of the present study show that the 3 plant-derived EOs can be used to prepare tomato-based antimicrobial edible films with good physical properties for food applications by both direct contact and indirectly by vapors emanating from the films.

  1. Epitaxial lateral overgrowth of Ga{sub x}In{sub 1-x}P toward direct Ga{sub x}In{sub 1-x}P/Si heterojunction

    Energy Technology Data Exchange (ETDEWEB)

    Omanakuttan, Giriprasanth; Stergiakis, Stamoulis; Sychugov, Ilya; Lourdudoss, Sebastian; Sun, Yan-Ting [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology-KTH, Kista (Sweden); Sahgal, Abhishek [Department of Materials and Nano Physics, School of Information and Communication Technology, Royal Institute of Technology-KTH, Kista (Sweden); Department of Physics, Indian Institute of Technology Delhi, New Delhi (India)

    2017-03-15

    The growth of GaInP by hydride vapor phase epitaxy (HVPE) was studied on planar GaAs, patterned GaAs for epitaxial lateral overgrowth (ELOG), and InP/Si seed templates for corrugated epitaxial lateral overgrowth (CELOG). First results on the growth of direct GaInP/Si heterojunction by CELOG is presented. The properties of Ga{sub x}In{sub (1-x)}P layer and their dependence on the process parameters were investigated by X-ray diffraction, including reciprocal lattice mapping (XRD-RLM), scanning electron microscopy equipped with energy-dispersive X-ray spectroscopy (SEM-EDS), photoluminescence (PL), and Raman spectroscopy. The fluctuation of Ga composition in the Ga{sub x}In{sub (1-x)}P layer was observed on planar substrate, and the strain caused by the composition variation is retained until relaxation occurs. Fully relaxed GaInP layers were obtained by ELOG and CELOG. Raman spectroscopy reveals that there is a certain amount of ordering in all of the layers except those grown at high temperatures. Orientation dependent Ga incorporation in the CELOG, but not in the ELOG Ga{sub x}In{sub (1-x)}P layer, and Si incorporation in the vicinity of direct Ga{sub x}In{sub (1-x)}P/Si heterojunction from CELOG are observed in the SEM-EDS analyses. The high optical quality of direct GaInP/Si heterojunction was observed by cross-sectional micro-PL mapping and the defect reduction effect of CELOG was revealed by high PL intensity in GaInP above Si. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Epitaxial Lateral Overgrowth of Semiconductors

    Science.gov (United States)

    Zytkiewicz, Zbigniew R.

    The state of the art and recent developments of lateral overgrowth of compound semiconductors are reviewed. First we focus on the mechanism of epitaxial lateral overgrowth (ELO) from the liquid phase, highlighting the phenomena that are crucial for growing high-quality layers with large aspect ratio. Epitaxy from the liquid phase has been chosen since the equilibrium growth techniques such as liquid-phase epitaxy (LPE) are the most suitable for lateral overgrowth. We then present numerous examples for which the defect filtration in the ELO procedure is very efficient and leads to significant progress in the development of high-performance semiconductor devices made of lattice-mismatched structures. Structural perfection of seams that appear when layers grown from neighboring seeds merge is also discussed. Next, we concentrate on strain commonly found in various ELO structures and arising due to the interaction of ELO layers with the mask. Its origin, and possible ways of its control, are presented. Then we show that the thermal strain in lattice-mismatched ELO structures can be relaxed by additional tilting of ELO wings while still preserving their high quality. Finally, recent progresses in the lateral overgrowth of semiconductors, including new mask materials and liquid-phase electroepitaxial growth on substrates coated by electrically conductive masks, are presented. New versions of the ELO technique from solution and from the vapor (growth from ridges and pendeo-epitaxy) are described and compared with standard ELO. A wide range of semiconductors, including III-V compounds grown from solution and vapor-grown GaN, are used to illustrate phenomena discussed. Very often, the similar behavior of various ELO structures reveals that the phenomena presented are not related to a specific group of compounds or their growth techniques, but have a much more general nature.

  3. Recent developments in droplet epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Abbarchi, Marco; Noda, Takeshi [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

    2014-05-15

    The droplet epitaxy allows for self-assembly of lattice-matched GaAs quantum dots (QDs) with high quality and high uniformity. In this article, we show our efforts to realize the GaAs QDs with excellent optical properties. After the optimization of the several growth processes, we achieved current-injection lasing in the GaAs QDs. In addition, formation of further advanced nanostructure is presented.

  4. European Conference on Molecular Beam Epitaxy and Related Growth Methods (6th) Held in Tampere, Finland on 21-14 April 1991

    Science.gov (United States)

    1991-04-24

    GaAs on Si with aSi Fp9 Layer by layer molecular beam 12.20- buffer layer 12.45- epitaxy of BiSrCaCuO: Study of 12.25 A. Georgakilas’, J. Stoemenos 2...Abstract submitted to the European MBE Workshop 1991 Fp9 LAYER BY LAYER MOLECULAR BEAM EPITAXY OF BiSrCaCuO: STUDY OF THE BISMUTH INCORPORATION M. Laguds, L

  5. Growth of epitaxial films of paramagnetic garnets and their characterization by cems and double-crystal diffractometry

    Science.gov (United States)

    Balestrino, G.; Paroli, P.; Antonini, B.; Luce, G.; Maturi, B.

    1987-11-01

    We report on the LPE growth of iron garnet films, paramagnetic at room temperature because of a high substitution (up to 1.7 atoms per formula unit) of diamagnetic Sc 3+ for Fe 3+. For yttrium iron garnet, the maximum amount of Sc 3+ that can be substituted is found to be an increasing function of the growth temperature, and to be little dependent on the Sc concentration in the melt. Simultaneous substitution of La 3+ enhances the maximum Sc 3+ substitution obtainable, and appears to increase the Sc 3+ preference for octahedral garnet sites.

  6. Chiral-Selective Growth of Single-Walled Carbon Nanotubes on Lattice-Mismatched Epitaxial Cobalt Nanoparticles

    DEFF Research Database (Denmark)

    He, Maoshuai; Jiang, Hua; Liu, Bilu

    2013-01-01

    Controlling chirality in growth of single-walled carbon nanotubes (SWNTs) is important for exploiting their practical applications. For long it has been conceptually conceived that the structural control of SWNTs is potentially achievable by fabricating nanoparticle catalysts with proper structur...

  7. An accurate method to determine the growth conditions during molecular beam epitaxy of cubic GaN

    Energy Technology Data Exchange (ETDEWEB)

    Schoettker, B.; Kuehler, J.; As, D.J.; Schikora, D.; Lischka, K. [Paderborn Univ. (Gesamthochschule) (Germany). Fachbereich 6 - Physik

    1998-08-01

    Reflection high energy electron diffraction (RHEED) is used to study the reconstruction of the (001) surface of cubic GaN, in particular to monitor the c(2 x 2) to (2 x 2) transition when the substrate shutter is closed. The delay time of the RHEED intensity increase after closing the substrate shutter is used as a measure of the excess Ga accumulated during growth at the surface. We describe a method which allows by measuring the transient of the intensity of the half-order streak to obtain optimum conditions for the growth of homogeneous c-GaN epilayers with a minimum density of micron-sized crystalline inclusions. (orig.) 7 refs.

  8. Stress relaxation in thick-film GaN grown by hydride vapor phase epitaxy on sapphire and spinel substrates as studied by photoluminescence and raman spectroscopy

    CERN Document Server

    Kim, S T; Lee, C; Kim, J E; Park, H Y

    1999-01-01

    The residual strains in thick-film GaN grown on both sapphire and spinel substrates has been evaluated by photoluminescence (PL) and raman spectroscopy . The strain-free shallow donor bound exciton recombination energy (I sub 2) is 3.468 eV at 10 K. The raman mode frequency shift with residual strain with estimated as DELTA w = 3.93 cm sup - sup 1 per one GPa for GaN layers on both substrates . The linear relationship between the PL I sub 2 line and the raman E sub 2 mode frequency is DELTA E/DELTA w = 5.12 meV/cm sup - sup 1 , which leads to a stress-induced PL line shift of DELTA E = 20 meV/GPa.

  9. DFT modeling of carbon incorporation in GaN(0001) and GaN(000 1 \\xAF ) metalorganic vapor phase epitaxy

    Science.gov (United States)

    Kempisty, Pawel; Kangawa, Yoshihiro; Kusaba, Akira; Shiraishi, Kenji; Krukowski, Stanislaw; Bockowski, Michal; Kakimoto, Koichi; Amano, Hiroshi

    2017-10-01

    The carbon incorporation mechanism in GaN(0001) and GaN(000 1 ¯) during MOVPE was investigated using density functional theory (DFT) calculations. The results confirm that the crucial factors for carbon incorporation are Fermi level pinning and accompanying surface band bending. In addition, the lattice symmetry has a strong dependence on the stability of carbon in a few subsurface layers, which results from interactions between the impurities and surface states. It was shown that these effects are responsible for facilitating or hindering the incorporation of impurities and dopants. The influence of diluent gas species (hydrogen or nitrogen) on carbon incorporation was discussed.

  10. The growth of epitaxial iron oxides on platinum (111) as studied by X-ray photoelectron diffraction, scanning tunneling microscopy, and low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yong -Joo [Univ. of California, Berkeley, CA (United States)

    1995-05-01

    Three complementary surface structure probes, x-ray photoelectron diffraction (XPD), scanning tunneling microscopy (STM), and low-energy electron diffraction (LEED) have been combined in a single instrument. This experimental system has been utilized to study the structure and growth mechanisms of iron oxide films on Pt(111); these films were formed by first depositing a single overlayer of Fe with a certain coverage in monolayers (ML`s), and then thermally oxidizing it in an oxygen atmosphere. For films up to ~1 ML in thickness, a bilayer of Fe and O similar to those in FeO(111) is found to form. In agreement with prior studies, STM and LEED show this to be an incommensurate oxide film forming a lateral superlattice with short- and long-range periodicities of ~3.1 Å and ~26.0 Å. XPD in addition shows a topmost oxygen layer to be relaxed inward by -0.6 Å compared to bulk FeO(111), and these are new structural conclusions. The oxygen stacking in the FeO(111) bilayer is dominated by one of two possible binding sites. For thicker iron oxide films from 1.25 ML to 3.0 ML, the growth mode is essentially Stranski-Krastanov: iron oxide islands form on top of the FeO(111) bilayer mentioned above. For iron oxide films of 3.0 ML thickness, x-ray photoelectron spectroscopy (XPS) yields an Fe 2p3/2 binding energy and an Fe:O stoichiometry consistent with the presence of Fe3O4. Our XPD data further prove this overlayer to be Fe3O4(111)-magnetite in two almost equally populated domains with a 180° rotation between them. The structural parameters for this Fe3O4 overlayer generally agree with those of a previous LEED study, except that we find a significant difference in the first Fe-O interplanar spacing. This work demonstrates the considerable benefits to be derived by using this set of complementary surface structure probes in such epitaxial growth studies.

  11. Microstructure of GaN epitaxial films at different stages of the growth process on sapphire (0 0 0 1)

    Science.gov (United States)

    Vennegues, P.; Beaumont, B.; Vaille, M.; Gibart, P.

    1997-04-01

    The microstructure of GaN films at different stages of a classical two steps growth process is studied using TEM. The buffer layer grown at low temperature (600°C) exhibits a mixed cubic-hexagonal columnar microstructure. Numerous defects are present to accomodate the misorientations between micrograins. During the following annealing step up to 1050°C, the microstructure drastically changes: cubic islands remain on the top of a film with hexagonal structure. The buffer layer at this stage is still highly polycrystalline. The microstructure of micrometer thick films grown at 1050°C could be separated in two zones. Close to the interface with sapphire, misfit dislocations, basal stacking faults and nanocavities are observed. We propose a mechanism of relaxation of the strain due to the difference of thermal expansion coefficients which could explain the presence of stacking faults. The existence of nanocavities is supposed to be related to a contamination by oxygen. After a thickness of 0.5 μm, two types of threading defects remain: edge dislocations with {1}/{3} Burgers vector which accommodate slight misorientations between grains, and nanopipes. These nanopipes are identified as open core dislocations with (0 0 0 1) Burgers vector. They have an alternating behaviour: close core, open core. The microstructure of this bulk zone duplicates the microstructure of the buffer layer at a higher scale, pointing out the crucial importance of the first steps of the growth.

  12. ZnO/Cu(InGa)Se.sub.2 solar cells prepared by vapor phase Zn doping

    Science.gov (United States)

    Ramanathan, Kannan; Hasoon, Falah S.; Asher, Sarah E.; Dolan, James; Keane, James C.

    2007-02-20

    A process for making a thin film ZnO/Cu(InGa)Se.sub.2 solar cell without depositing a buffer layer and by Zn doping from a vapor phase, comprising: depositing Cu(InGa)Se.sub.2 layer on a metal back contact deposited on a glass substrate; heating the Cu(InGa)Se.sub.2 layer on the metal back contact on the glass substrate to a temperature range between about 100.degree. C. to about 250.degree. C.; subjecting the heated layer of Cu(InGa)Se.sub.2 to an evaporant species from a Zn compound; and sputter depositing ZnO on the Zn compound evaporant species treated layer of Cu(InGa)Se.sub.2.

  13. Significance of vapor phase chemical reactions on CVD rates predicted by chemically frozen and local thermochemical equilibrium boundary layer theories

    Science.gov (United States)

    Gokoglu, Suleyman A.

    1988-01-01

    This paper investigates the role played by vapor-phase chemical reactions on CVD rates by comparing the results of two extreme theories developed to predict CVD mass transport rates in the absence of interfacial kinetic barrier: one based on chemically frozen boundary layer and the other based on local thermochemical equilibrium. Both theories consider laminar convective-diffusion boundary layers at high Reynolds numbers and include thermal (Soret) diffusion and variable property effects. As an example, Na2SO4 deposition was studied. It was found that gas phase reactions have no important role on Na2SO4 deposition rates and on the predictions of the theories. The implications of the predictions of the two theories to other CVD systems are discussed.

  14. Biomass-based composites from poly(lactic acid) and wood flour by vapor-phase assisted surface polymerization.

    Science.gov (United States)

    Kim, Donghee; Andou, Yoshito; Shirai, Yoshihito; Nishida, Haruo

    2011-02-01

    To prepare biomass-based composites in an environmentally benign manner, vapor-phase assisted surface polymerization (VASP) was applied to prepare the composites from wood flour and poly(l-lactic acid) (PLLA) without solvent. VASP of l,l-lactide successfully proceeded on the wood flour surfaces, resulting in surface coverage by newly generated PLLA. For obtained PLLA/wood flour composites, it was clarified that grafting of PLLA on wood flour surfaces had occurred to form covalently bonded composites, with the accumulated PLLA layers having crystallized in situ during VASP. Resulting PLLA layers showed very high crystallinity of 79.2% and a high melting point close to the equilibrium melting point. Moreover, thermal degradation behavior of the composites suggested a cooperative degradation manner of the components.

  15. Adsorptive Water Removal from Dichloromethane and Vapor-Phase Regeneration of a Molecular Sieve 3A Packed Bed.

    Science.gov (United States)

    Jović, Slaviša; Laxminarayan, Yashasvi; Keurentjes, Jos; Schouten, Jaap; van der Schaaf, John

    2017-05-03

    The drying of dichloromethane with a molecular sieve 3A packed bed process is modeled and experimentally verified. In the process, the dichloromethane is dried in the liquid phase and the adsorbent is regenerated by water desorption with dried dichloromethane product in the vapor phase. Adsorption equilibrium experiments show that dichloromethane does not compete with water adsorption, because of size exclusion; the pure water vapor isotherm from literature provides an accurate representation of the experiments. The breakthrough curves are adequately described by a mathematical model that includes external mass transfer, pore diffusion, and surface diffusion. During the desorption step, the main heat transfer mechanism is the condensation of the superheated dichloromethane vapor. The regeneration time is shortened significantly by external bed heating. Cyclic steady-state experiments demonstrate the feasibility of this novel, zero-emission drying process.

  16. Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

    Science.gov (United States)

    Wistey, Mark Allan

    Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

  17. Columnar jointing in vapor-phase-altered, non-welded Cerro Galán Ignimbrite, Paycuqui, Argentina

    Science.gov (United States)

    Wright, Heather M.; Lesti, Chiara; Cas, Ray A.F.; Porreca, Massimiliano; Viramonte, Jose G.; Folkes, Christopher B.; Giordano, Guido

    2011-01-01

    Columnar jointing is thought to occur primarily in lavas and welded pyroclastic flow deposits. However, the non-welded Cerro Galán Ignimbrite at Paycuqui, Argentina, contains well-developed columnar joints that are instead due to high-temperature vapor-phase alteration of the deposit, where devitrification and vapor-phase crystallization have increased the density and cohesion of the upper half of the section. Thermal remanent magnetization analyses of entrained lithic clasts indicate high emplacement temperatures, above 630°C, but the lack of welding textures indicates temperatures below the glass transition temperature. In order to remain below the glass transition at 630°C, the minimum cooling rate prior to deposition was 3.0 × 10−3–8.5 × 10−2°C/min (depending on the experimental data used for comparison). Alternatively, if the deposit was emplaced above the glass transition temperature, conductive cooling alone was insufficient to prevent welding. Crack patterns (average, 4.5 sides to each polygon) and column diameters (average, 75 cm) are consistent with relatively rapid cooling, where advective heat loss due to vapor fluxing increases cooling over simple conductive heat transfer. The presence of regularly spaced, complex radiating joint patterns is consistent with fumarolic gas rise, where volatiles originated in the valley-confined drainage system below. Joint spacing is a proxy for cooling rates and is controlled by depositional thickness/valley width. We suggest that the formation of joints in high-temperature, non-welded deposits is aided by the presence of underlying external water, where vapor transfer causes crystallization in pore spaces, densifies the deposit, and helps prevent welding.

  18. Indium tin oxide thin-films prepared by vapor phase pyrolysis for efficient silicon based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Simashkevich, Alexei, E-mail: alexeisimashkevich@hotmail.com [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Serban, Dormidont; Bruc, Leonid; Curmei, Nicolai [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Hinrichs, Volker [Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Rusu, Marin [Institute of Applied Physics, 5 Academiei str., Chisinau, MD-2028, Republic of Moldova (Moldova, Republic of); Institut für Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Lise-Meitner Campus, Hahn-Meitner-Platz 1, 14109 Berlin (Germany)

    2016-07-01

    The vapor phase pyrolysis deposition method was developed for the preparation of indium tin oxide (ITO) thin films with thicknesses ranging between 300 and 400 nm with the sheet resistance of 10–15 Ω/sq. and the transparency in the visible region of the spectrum over 80%. The layers were deposited on the (100) surface of the n-type silicon wafers with the charge carriers concentration of ~ 10{sup 15} cm{sup −3}. The morphology of the ITO layers deposited on Si wafers with different surface morphologies, e.g., smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) was investigated. The as-deposited ITO thin films consist of crystalline columns with the height of 300–400 nm and the width of 50–100 nm. Photovoltaic parameters of mono- and bifacial solar cells of Cu/ITO/SiO{sub 2}/n–n{sup +} Si/Cu prepared on Si (100) wafers with different surface structures were studied and compared. A maximum efficiency of 15.8% was achieved on monofacial solar cell devices with the textured Si surface. Bifacial photovoltaic devices from 100 μm thick Si wafers with the smooth surface have demonstrated efficiencies of 13.0% at frontal illumination and 10% at rear illumination. - Highlights: • ITO thin films prepared by vapor phase pyrolysis on Si (100) wafers with a smooth (polished), rough (irregularly structured) and textured (by inversed pyramids) surface. • Monofacial ITO/SiO2/n-n+Si solar cells with an efficiency of 15.8% prepared and bifacial PV devices with front- and rear-side efficiencies up to 13% demonstrated. • Comparative studies of photovoltaic properties of solar cells with different morphologies of the Si wafer surface presented.

  19. APTS and rGO co-functionalized pyrenated fluorescent nanonets for representative vapor phase nitroaromatic explosive detection

    Science.gov (United States)

    Guo, Linjuan; Zu, Baiyi; Yang, Zheng; Cao, Hongyu; Zheng, Xuefang; Dou, Xincun

    2014-01-01

    For the first time, flexible PVP/pyrene/APTS/rGO fluorescent nanonets were designed and synthesized via a one-step electrospinning method to detect representative subsaturated nitroaromatic explosive vapor. The functional fluorescent nanonets, which were highly stable in air, showed an 81% quenching efficiency towards TNT vapor (~10 ppb) with an exposure time of 540 s at room temperature. The nice performance of the nanonets was ascribed to the synergistic effects induced by the specific adsorption properties of APTS, the fast charge transfer properties and the effective π-π interaction with pyrene and TNT of rGO. Compared to the analogues of TNT, the PVP/pyrene/APTS/rGO nanonets showed notable selectivity towards TNT and DNT vapors. The explored functionalization method opens up brand new insight into sensitive and selective detection of vapor phase nitroaromatic explosives.For the first time, flexible PVP/pyrene/APTS/rGO fluorescent nanonets were designed and synthesized via a one-step electrospinning method to detect representative subsaturated nitroaromatic explosive vapor. The functional fluorescent nanonets, which were highly stable in air, showed an 81% quenching efficiency towards TNT vapor (~10 ppb) with an exposure time of 540 s at room temperature. The nice performance of the nanonets was ascribed to the synergistic effects induced by the specific adsorption properties of APTS, the fast charge transfer properties and the effective π-π interaction with pyrene and TNT of rGO. Compared to the analogues of TNT, the PVP/pyrene/APTS/rGO nanonets showed notable selectivity towards TNT and DNT vapors. The explored functionalization method opens up brand new insight into sensitive and selective detection of vapor phase nitroaromatic explosives. Electronic supplementary information (ESI) available: Vapor pressure of TNT and its analogues, fluorescence quenching kinetics, fluorescence quenching efficiencies and additional SEM images. See DOI: 10.1039/c3nr04960d

  20. Synthesis of highly dispersed platinum particles on carbon nanotubes by an in situ vapor-phase method

    Energy Technology Data Exchange (ETDEWEB)

    Mercado-Zúñiga, C. [Depto. Ing. Metalurgia y Materiales, Instituto Politecnico Nacional, Mexico 07300 D.F. (Mexico); Vargas-García, J.R., E-mail: rvargasga@ipn.mx [Depto. Ing. Metalurgia y Materiales, Instituto Politecnico Nacional, Mexico 07300 D.F. (Mexico); Hernández-Pérez, M.A. [Depto. Ing. Metalurgia y Materiales, Instituto Politecnico Nacional, Mexico 07300 D.F. (Mexico); Figueroa-Torres, M.Z. [Depto. Eco-Materiales y Energia, Univ. Autonoma de Nuevo Leon, Nuevo Leon 66450 (Mexico); Cervantes-Sodi, F. [Depto. Fisica y Matematicas, Univ. Iberoamericana, Mexico 01209 D.F. (Mexico); Torres-Martínez, L.M. [Depto. Eco-Materiales y Energia, Univ. Autonoma de Nuevo Leon, Nuevo Leon 66450 (Mexico)

    2014-12-05

    Highlights: • Highly dispersed Pt nanoparticles were prepared on functionalized carbon nanotubes. • A simple and competitive vapor-phase method was employed. • Carbonyl groups were assumed to be responsible for assisted decomposition of Pt-acac. • Pt particles were highly dispersed because carbonyl groups served as reaction sites. • Particles of 2.3 nm in size were highly dispersed even the high loading (27 wt%Pt). - Abstract: Highly dispersed Pt nanoparticles were prepared on functionalized multi-walled carbon nanotubes (f-MWCNTs) using a simple in situ vapor-phase method. The method consisted in two-step procedure in which an initial mixture of Pt precursor (Pt-acac) and f-MWCNTs was heated in a quartz tube reactor, first at 180 °C and then at 400 °C. Fourier transform infrared spectroscopy (FTIR–ATR), thermal gravimetric analysis (TGA) and X-ray diffraction (XRD) were used to follow the chemical and structural transformations of mixture components during heating steps. The functionalization of MWCNTs with HNO{sub 3}/H{sub 2}SO{sub 4} solution resulted in formation of surface carbonyl groups. The FTIR–ATR and XRD results indicated that individual Pt-acac withstood heating at 180 °C, whereas it was dissociated when heated in contact with f-MWCNTs at the same temperature. Thus, the functional carbonyl groups were found to be responsible for assisted decomposition of Pt-acac at 180 °C. Since carbonyl groups served as reaction sites for decomposition of Pt-acac, the resulting particles were highly and homogeneously dispersed on the surface of MWCNTs even the relatively high metallic loading of 27 wt%. TEM observations revealed that crystalline Pt particles exhibit narrow size distribution with a mean size of 2.3 nm.

  1. Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers

    Energy Technology Data Exchange (ETDEWEB)

    Queraltó, A.; Pérez del Pino, A., E-mail: aperez@icmab.es; Mata, M. de la; Tristany, M.; Gómez, A.; Obradors, X.; Puig, T. [Institut de Ciència de Materials de Barcelona, Consejo Superior de Investigaciones Científicas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia (Spain); Arbiol, J. [Institut de Ciència de Materials de Barcelona, Consejo Superior de Investigaciones Científicas (ICMAB-CSIC), Campus UAB, 08193 Bellaterra, Catalonia (Spain); Institució Catalana de Recerca i Estudis Avançats (ICREA), Passeig Lluís Companys, 23, 08010 Barcelona, Catalonia (Spain)

    2015-06-29

    Highly crystalline epitaxial Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} (BST) thin-films are grown on (001)-oriented LaNiO{sub 3}-buffered LaAlO{sub 3} substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than in thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V{sup −1}.

  2. Epitaxial growth of Sr(x)TiO(y) and fabrication of EuBa2Cu3O(7-delta)/Sr(x)TiO(y)/Pb tunnel junctions

    Science.gov (United States)

    Michikami, Osamu; Asahi, Masayoshi

    1991-03-01

    Thin films deposited from an SrTiO3 (STO) target using rf magnetron sputtering were examined. The Sr(1.6)TiO(y) films with perovskitelike structure grew epitaxially at substrate temperatures above 500 C. The trilayered films of EuBa2Cu3O7(EBCO)/STO/EBCO were desposited epitaxially on STO(110) substrated, but partial polycrystal growth in the EBCO film of the third layer was observed. In view of this result, EBCO(110)/STO(110)/Pb tunnel junctions were produced on STO(110) substrates. The I-V characteristics of junctions with an Rnn of 10 ohms showed a gap opening at a bias voltage of about 10 mV, a clear gap structure at 2.5 mV, and Rj/Rnn = 12.4 below 2.5 mV. The low-energy gap below 2.5 mV was caused by the deterioration of the EBCO base electrodes due to the junction fabrication process. The large Rj/Rnn suggests that an STO epitaxial ultrathin film can be a good low-leakage barrier. On the other hand, lower resistance junctions showed the development of a supercurrent at zero bias.

  3. Particle-assisted GaxIn1xP nanowire growth for designed bandgap structures

    DEFF Research Database (Denmark)

    Jacobsson, D.; Persson, Johan Mikael; Kriegner, D.

    2012-01-01

    Non-tapered vertically straight GaxIn1−xP nanowires were grown in a compositional range from Ga0.2In0.8P to pure GaP in particle-assisted mode by controlling the trimethylindium, trimethylgallium and hydrogen chloride flows in metal–organic vapor phase epitaxy. X-ray energy dispersive spectroscop...... sample area, i.e., including edge effects during growth. The non-capped nanowires emit room temperature photoluminescence strongly in the energy range of 1.43–2.16 eV, correlated with the bandgap expected from the material composition....... in transmission electron microscopy revealed homogeneous radial material composition in single nanowires, whereas variations in the material composition were found along the nanowires. High-resolution x-ray diffraction indicates a variation of the material composition on the order of about 19% measuring an entire...

  4. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity

    Science.gov (United States)

    Ju, Guangxu; Tabuchi, Masao; Takeda, Yoshikazu; Amano, Hiroshi

    2017-06-01

    Ga1-xInxN epilayers (x = 0.09 or 0.14) grown on c-plane GaN layers with different densities of threading dislocations have been investigated by real-time x-ray reflectivity during metal-organic vapor phase epitaxial growth. We found that the density of pre-existing threading dislocations in GaN plays an important role in the strain relaxation of Ga1-xInxN. Critical thicknesses were obtained and compared with theoretical predictions using the mechanical equilibrium model and the energy balance model. The critical thickness of GaInN varies inversely with dislocation density in the GaN sublayer. When the threading dislocation density in the sublayer was reduced by three orders of magnitude, the photoluminescence intensity of the Ga0.86In0.14N epilayer was improved by a factor of ten.

  5. Growth process for gallium nitride porous nanorods

    Science.gov (United States)

    Wildeson, Isaac Harshman; Sands, Timothy David

    2015-03-24

    A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

  6. Epitaxial Growth of Full-Heusler Alloy Co2MnSi Thin Films on MgO-Buffered MgO Substrates

    OpenAIRE

    Kijima, H; Ishikawa, T.; Marukame, T.; Koyama, H; Matsuda, K; Uemura, T.; Yamamoto, M.

    2006-01-01

    Full-Heusler alloy Co₂MnSi (CMS) thin films were epitaxially grown on MgO-buffered MgO substrates through magnetron sputtering. The films were deposited at room temperature and subsequently annealed in situ at 600℃. X-ray pole figure measurements of the annealed films showed 111 peaks with fourfold symmetry, providing direct evidence that these films were epitaxial and crystallized in the L2₁ structure. The annealed films had sufficiently flat surface morphologies with root-mean-squa...

  7. Epitaxial grown InP quantum dots on a GaAs buffer realized on GaP/Si(001) templates

    Energy Technology Data Exchange (ETDEWEB)

    Hartwig, Walter; Wiesner, Michael; Koroknay, Elisabeth; Paul, Matthias; Jetter, Michael; Michler, Peter [Institut fuer Halbleiteroptik und Funktionelle Grenzflaechen und Research Center SCoPE, Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)

    2013-07-01

    The increasing necessity of higher computational capacity and security in the information technology requires originally technical solutions, which today's standard microelectronics, as their technical limits are close, can't provide anymore. One way out offers the integration of III-V semiconductor photonics with low-dimensional structures in current CMOS technology, enabling on-chip quantum optical applications, like quantum cryptography or quantum computing. Challenges in the heteroepitaxy of III-V semiconductors and silicon are the mismatches in material properties of the both systems. Defects, like dislocations and anti-phase domains (APDs), inhibit the monolithic integration of III-V semiconductor on Si. We present the growth of a thin GaAs buffer on CMOS-compatible oriented Si(001) by metal-organic vapor-phase epitaxy. To circumvent the forming APDs in the GaAs buffer a GaP on Si template (provided by NAsP{sub III/V} GmbH) was used. The dislocation density was then reduced by integrating several layers of InAs quantum dots in the GaAs buffer to bend the threading misfit dislocations. On top of this structure we grew InP quantum dots embedded in a Al{sub x}Ga{sub 1-x}InP composition and investigated the photoluminescence properties.

  8. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Feltin, E.; Dorsaz, J. [NOVAGAN AG, CH-1015 Lausanne (Switzerland); Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C. [EXALOS AG, CH-8952 Schlieren (Switzerland)

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  9. Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

    2016-04-11

    The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  10. Epitaxial growth and properties of AlGaN-based UV-LEDs on Si(111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Saengkaew, Phannee

    2010-07-08

    An increasing demand for bright and efficient ultraviolet light emitting diodes (UVLEDs) is generated by numerous applications such as biochemical sensors, purification and sterilization, and solid-state white lighting. Al{sub x}Ga{sub 1-x}N is a promising material to develop UVLEDs due to the direct wide-bandgap material for emission wavelengths in the UV range and the capability of n- and p-type doping. To develop UV-LEDs on Si substrates is very interesting for low-cost UV-light sources since the Si substrate is available at low cost, in large-diameter size enabling the integration with well-known Si electronics. This work presents the first crack-free AlGaN-based UV-LEDs on Si(111) substrates by MOVPE growth. This AlGaN-based UV-LED on Si(111) substrate consists of Al{sub 0.1}Ga{sub 0.9}N:Si layers on LT-AlN/HT-AlN SL buffer layers and an active layer of GaN/Al{sub 0.1}Ga{sub 0.9}N MQWs followed by Mg-doped (GaN/Al{sub 0.1}Ga{sub 0.9}N) superlattices and GaN:Mg cap layers. It yields a {proportional_to}350 nm UV electroluminescence at room temperature and a turn-on voltage in a range of 2.6-3.1 V by current-voltage (I-V) measurements. The novel LT-AlN/HT-AlN superlattice buffer layers efficiently improve the crystalline quality of Al{sub x}Ga{sub 1-x}N layers and compensate a thermal tensile strain in Al{sub x}Ga{sub 1-x}N layers after cooling as observed by in-situ curvature measurements. The dislocation density could be reduced from 8.4 x 10{sup 10} cm{sup -2} in the AlN-based SLs to 1.8 x 10{sup 10} cm{sup -2} in the Al{sub 0.1}Ga{sub 0.9}N layers as determined by cross-sectional transmission electron microscopy (TEM) measurements. Crack-free Al{sub x}Ga{sub 1-x}N layers grown on these LT-AlN/HT-AlN superlattices with 0.05{<=}x{<=} 0.65 are achieved on Si substrates with good crystalline, optical, and electrical properties. The best crystalline quality of Al{sub 0.1}Ga{sub 0.9}N is obtained with {omega}-FWHMs of the (0002) and (10-10) reflections of

  11. Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Lee, In-Hwan [School of Advanced Materials Engineering and Research Center of Advanced Materials Development, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Polyakov, A. Y.; Turutin, A. V.; Shemerov, I. V. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Smirnov, N. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Rare Metals, B. Tolmachevsky, 5, Moscow 119017 (Russian Federation); Yakimov, E. B. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Science, 6, Academician Ossipyan str., Chernogolovka, Moscow Region 142432 (Russian Federation); Tarelkin, S. A. [National University of Science and Technology MISiS, Leninskiy pr. 4, Moscow 119049 (Russian Federation); Technological Institute for Superhard and Novel Carbon Materials, 7 Centralnaya St., Troitsk, Moscow 142190 (Russian Federation); Pearton, S. J., E-mail: spear@mse.ufl.edu [University of Florida, Gainesville, Florida 32611 (United States)

    2016-05-28

    A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level electron and hole trap spectra, microcathodoluminescence, electron beam induced current, diffusion length, and electron capture cross section from the dependence of the low temperature persistent photocapacitance on forward bias injection pulse duration. The results show a prominent role of electron traps with levels near E{sub c}-0.56 eV in limiting the lifetime and diffusion length values in all these materials.

  12. Growth of rough epitaxial surfaces

    Indian Academy of Sciences (India)

    Among various physical processes which have been taken into account in models of growing interfaces, surface diffusion has been considered as the most important process involved. One such model involves the linear fourth-order Mullins–Herring continuum equation [10,11] supported by the discrete model of Wolf and ...

  13. Growth of rough epitaxial surfaces

    Indian Academy of Sciences (India)

    We present here a set of coupled continuum equations to describe atomic deposition. We take into account evaporation due to thermal and mechanical disturbances as well as subsequent accretion at favourable grooves. Author Affiliations. Abhijit Mookerjee1. S.N. Bose National Centre for Basic Sciences, JD Block, Sector ...

  14. Solid-Phase Epitaxial Growth.

    Science.gov (United States)

    1980-04-01

    requires electrical contact to the wafer, and, moreover, the sample must be specially shaped to achieve uniform heating. Use of an external lamp requires...strain pro- duced by the significant amount of unreacted Pd in the film. The rela- tively incomplete comsumption of the initial Pd is probably the...orienta- tion dependence, dopant incorporation) are presented and the electrical behavior of transistors made in SPE material is discussed. The study of

  15. Simulation of epitaxial growth of CeO{sub 2} on YSZ(100) and SrTiO{sub 3} on MgO(100) for YBa{sub 2}Cu{sub 3}O{sub 7-x} deposition

    Energy Technology Data Exchange (ETDEWEB)

    Aguiar, R.; Sanchez, F.; Ferrater, C.; Aguilo, M.; Varela, M. [Barcelona Univ. (Spain). Dept. de Fisica Aplicada i Electronica]|[Lab. de Cristallografia, Universitat Rovira i Virgili, Placa Imperial Tarraco 1, Tarragona E-43005 (Spain)

    1998-04-01

    A simulation based on the optimization of the interaction energy between the atoms at both sides of the different film and film-substrate interfaces has been used to qualitatively predict their relative in-plane positioning and orientation. The method has been applied to YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO), CeO{sub 2} and SrTiO{sub 3} films on yttria stabilized zirconia (YSZ) (100) and MgO(100) single crystals. It allows to predict cube-on-cube epitaxial growth of CeO{sub 2} on YSZ(100) and SrTiO{sub 3} on MgO(100). [00h] oriented YBCO epitaxial growth should take place on the buffers with [0h0] axes rotated 45 away from [100] direction of CeO{sub 2}, and parallel to [100] direction on SrTiO{sub 3}. The computed relationships are in agreement to the results obtained in laser ablation deposited YBCO/YSZ(100), YBCO/CeO{sub 2}/YSZ(100), YBCO/MgO(100) and YBCO/SrTiO{sub 3}/MgO structures as well as other reported results. (orig.) 13 refs.

  16. Highly Ordered Boron Nitride Nanotube Arrays with Controllable Texture from Ammonia Borane by Template-Aided Vapor-Phase Pyrolysis

    Directory of Open Access Journals (Sweden)

    Yuting Wang

    2008-01-01

    Full Text Available An efficient approach for the preparation of good-quality boron nitride nanotubes (BNNTs is developed. BNNTs with specific texture were prepared from ammonia borane (BH3NH3 by vapor-phase pyrolysis with the aid of a template in two independent temperature-controlled furnaces. Two kinds of BNNTs, 200–300 nm wide ×60 μm long and 70–80 nm wide ×40 μm long, were produced after removal of the templates. The as-produced BNNTs were heated at different temperatures in the range of 1300–1700°C in NH3. FT-IR and XPS results confirmed the formation of BN from BH3NH3. Ordered arrays of BNNTs without cracks on the surface were seen using microstructural observations. The diameter and length of the BNNTs are controlled using templates with different pore sizes and thickness. The wall thickness of the nanotubes was increased by increasing the number of deposition cycles. The crystallinity of the BNNTs was improved by heating at a high temperature (1700°C in NH3.

  17. Using vapor phase tomography to measure the spatial distribution of vapor concentrations and flux for vadose-zone VOC sources.

    Science.gov (United States)

    Mainhagu, J; Morrison, C; Brusseau, M L

    2015-01-01

    A test was conducted at a chlorinated-solvent contaminated site in Tucson, AZ, to evaluate the effectiveness of vapor-phase tomography (VPT) for characterizing the distribution of volatile organic contaminants (VOC) in the vadose zone. A soil vapor extraction (SVE) system has been in operation at the site since 2007. Vapor concentration and vacuum pressure were measured at four different depths in each of the four monitoring wells surrounding the extraction well. The test provided a 3D characterization of local vapor concentrations under induced-gradient conditions. Permeability data obtained from analysis of borehole logs were used along with pressure and the vapor-concentration data to determine VOC mass flux within the test domain. A region of higher mass flux was identified in the deepest interval of the S-SW section of the domain, indicating the possible location of a zone with greater contaminant mass. These results are consistent with the TCE-concentration distribution obtained from sediment coring conducted at the site. In contrast, the results of a standard soil gas survey did not indicate the presence of a zone with greater contaminant mass. These results indicate that the VPT test provided a robust characterization of VOC concentration and flux distribution at the site. Copyright © 2015 Elsevier B.V. All rights reserved.

  18. Shock-and-Release to the Liquid-Vapor Phase Boundary: Experiments and Applications to Planetary Science

    Science.gov (United States)

    Stewart, Sarah

    2017-06-01

    Shock-induced vaporization was a common process during the end stages of terrestrial planet formation and transient features in extra-solar systems are attributed to recent giant impacts. At the Sandia Z Machine, my collaborators and I are conducting experiments to study the shock Hugoniot and release to the liquid-vapor phase boundary of major minerals in rocky planets. Current work on forsterite, enstatite and bronzite and previous results on silica, iron and periclase demonstrate that shock-induced vaporization played a larger role during planet formation than previously thought. I will provide an overview of the experimental results and describe how the data have changed our views of planetary impact events in our solar system and beyond. Sandia National Laboratories is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344. This work is supported by the Z Fundamental Science Program at Sandia National Laboratories, DOE-NNSA Grant DE- NA0002937, NASA Grant # NNX15AH54G, and UC Multicampus-National Lab Collaborative Research and Training Grant #LFR-17-449059.

  19. Germanium diffusion with vapor-phase GeAs and oxygen co-incorporation in GaAs

    Directory of Open Access Journals (Sweden)

    Wei-Fu Wang

    2018-01-01

    Full Text Available Vapor-phase germanium diffusion has been demonstrated in Zn-doped and semi-insulating GaAs in sealed ampoules with GeAs powders and excess arsenic. Secondary-ion-mass spectroscopy (SIMS profiles indicate the presence of unintentional co-incorporation of oxygen in high densities (>1017/cm3 along with diffused germanium donors whose concentration (>>1018/cm3 determined by electro-chemical capacitance-voltage (ECV profiler shows significant compensation near the surface. The source of oxygen mainly originates from the GeAs powder which contains Ge-O surface oxides. Variable-temperature photoluminescence (PL shows that in GeAs-diffused samples, a broad peak ranging from 0.86-1.38 eV with the peak position around 1.1 eV predominates at low temperatures while the near band-edge luminescence quenches. The broad band is attributed to the GeGa-VGa self-activated (SA centers possibly associated with nearby oxygen-related defect complex, and its luminescence persists up to 400 K. The configurational-coordinate modeling finds that the SA defect complex has a thermal activation energy of 150-180 meV and a vibrational energy 26.8 meV. The presence of oxygen does not much affect the SA emission intensity but may have influenced the peak position, vibration frequency and activation energy as compared to other common donor-VGa defects in GaAs.

  20. Detection of vapor-phase organophosphate threats using wearable conformable integrated epidermal and textile wireless biosensor systems.

    Science.gov (United States)

    Mishra, Rupesh K; Martín, Aida; Nakagawa, Tatsuo; Barfidokht, Abbas; Lu, Xialong; Sempionatto, Juliane R; Lyu, Kay Mengjia; Karajic, Aleksandar; Musameh, Mustafa M; Kyratzis, Ilias L; Wang, Joseph

    2018-03-15

    Flexible epidermal tattoo and textile-based electrochemical biosensors have been developed for vapor-phase detection of organophosphorus (OP) nerve agents. These new wearable sensors, based on stretchable organophosphorus hydrolase (OPH) enzyme electrodes, are coupled with a fully integrated conformal flexible electronic interface that offers rapid and selective square-wave voltammetric detection of OP vapor threats and wireless data transmission to a mobile device. The epidermal tattoo and textile sensors display a good reproducibility (with RSD of 2.5% and 4.2%, respectively), along with good discrimination against potential interferences and linearity over the 90-300mg/L range, with a sensitivity of 10.7µA∙cm 3 ∙mg -1 (R 2 = 0.983) and detection limit of 12mg/L in terms of OP air density. Stress-enduring inks, used for printing the electrode transducers, ensure resilience against mechanical deformations associated with textile and skin-based on-body sensing operations. Theoretical simulations are used to estimate the OP air density over the sensor surface. These fully integrated wearable wireless tattoo and textile-based nerve-agent vapor biosensor systems offer considerable promise for rapid warning regarding personal exposure to OP nerve-agent vapors in variety of decentralized security applications. Copyright © 2017 Elsevier B.V. All rights reserved.