Chemistry, spectroscopy and the role of supported vanadium oxides in heterogeneous catalysis

NARCIS (Netherlands)

Weckhuysen, B.M.; Keller, D.E.

2003-01-01

Supported vanadium oxide catalysts are active in a wide range of applications. In this review, an overview is given of the current knowledge available about vanadium oxide-based catalysts. The review starts with the importance of vanadium in heterogeneous catalysis, a discussion of the molecular

Ab initio Investigation of Helium in Vanadium Oxide Nanoclusters

Science.gov (United States)

Danielson, Thomas; Tea, Eric; Hin, Celine

Nanostructured ferritic alloys (NFAs) are strong candidate materials for the next generation of fission reactors and future fusion reactors. They are characterized by a large number density of oxide nanoclusters dispersed throughout a BCC iron matrix, where current oxide nanoclusters are primarily comprised of Y-Ti-O compounds. The oxide nanoclusters provide the alloy with high resistance to neutron irradiation, high yield strength and high creep strength at the elevated temperatures of a reactor environment. In addition, the oxide nanoclusters serve as trapping sites for transmutation product helium providing substantially increased resistance to catastrophic cracking and embrittlement. Although the mechanical properties and radiation resistance of the existing NFAs is promising, the problem of forming large scale reactor components continues to present a formidable challenge due to the high hardness and unpredictable fracture behavior of the alloys. An alternative alloy has been previously proposed and fabricated where vanadium is added in order to form vanadium oxide nanoclusters that serve as deflection sites for crack propagation. Although experiments have shown evidence that the fracture behavior of the alloys is improved, it is unknown whether or not the vanadium oxide nanoclusters are effective trapping sites for helium. We present results obtained using density functional theory investigating the thermodynamic stability of helium with the vanadium oxide matrix to make a comparison of trapping effectiveness to traditional Y-Ti-O compounds.

X-Ray Absorption Studies of Vanadium-Containing Metal Oxide Nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Hohn, Keith, L.

2006-01-09

Metal oxide nanocrystals offer significant potential for use as catalysts or catalyst supports due to their high surface areas and unique chemical properties that result from the high number of exposed corners and edges. However, little is known about the catalytic activity of these materials, especially as oxidation catalysts. This research focused on the preparation, characterization and use of vanadium-containing nanocrystals as selective oxidation catalysts. Three vanadium-containing nanocrystals were prepared using a modified sol-gel procedure: V/MgO, V/SiO2, and vanadium phosphate (VPO). These represent active oxidation catalysts for a number of industrially relevant reactions. The catalysts were characterized by x-ray diffraction and Raman, UV-VIS, infrared and x-ray absorption spectroscopies with the goal of determining the primary structural and chemical differences between nanocrystals and microcrystals. The catalytic activity of these catalysts was also studied in oxidative dehydrogenation of butane and methanol oxidation to formaldehyde. V/MgO nanocrystals were investigated for activity in oxidative dehydrogenation of butane and compared to conventional V/MgO catalysts. Characterization of V/MgO catalysts using Raman spectroscopy and x-ray absorption spectroscopy showed that both types of catalysts contained magnesium orthovanadate at vanadium loadings below 15 weight%, but above that loading, magnesium pyrovanadate may have been present. In general, MgO nanocrystals had roughly half the crystal size and double the surface area of the conventional MgO. In oxidative dehydrogenation of butane, nanocrystalline V/MgO gave higher selectivity to butene than conventional V/MgO at the same conversion. This difference was attributed to differences in vanadium domain size resulting from the higher surface areas of the nanocrystalline support, since characterization suggested that similar vanadium phases were present on both types of catalysts. Experiments in

Novel hybrid materials based on the vanadium oxide nanobelts

Energy Technology Data Exchange (ETDEWEB)

Zabrodina, G.S., E-mail: kudgs@mail.ru [G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University, Nizhny Novgorod 603950 (Russian Federation); Makarov, S.G.; Kremlev, K.V. [G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University, Nizhny Novgorod 603950 (Russian Federation); Yunin, P.A.; Gusev, S.A. [Institute for Physics of Microstructures Russian Academy of Sciences, Nizhny Novgorod 603087 (Russian Federation); Kaverin, B.S.; Kaverina, L.B. [G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Ketkov, S.Yu. [G.A. Razuvaev Institute of Organometallic Chemistry of Russian Academy of Sciences, Nizhny Novgorod 603950 (Russian Federation); Lobachevsky State University, Nizhny Novgorod 603950 (Russian Federation)

2016-04-15

Graphical abstract: - Highlights: • Flat and curved vanadium oxide nanobelts have been synthesized. • Hybrid material was prepared via decoration of flexible nanobelts with zinc phthalocyanine. • Investigations of the thermal stability, morphologies and structures were carried out. - Abstract: Novel hybrid materials based on zinc phthalocyanine and nanostructured vanadium oxides have attracted extensive attention for the development of academic research and innovative industrial applications such as flexible electronics, optical sensors and heterogeneous catalysts. Vanadium oxides nanobelts were synthesized via a hydrothermal treatment V{sub 2}O{sub 5}·nH{sub 2}O gel with surfactants (TBAB, CTAB) used as structure-directing agents, where CTAB – cetyltrimethylammonium bromide, TBAB – tetrabutylammonium bromide. Hybrid materials were prepared decoration of (CTA){sub 0.33}V{sub 2}O{sub 5} flexible nanobelts with cationic zinc phthalocyanine by the ion-exchange route. Investigations of the thermal stability, morphologies and structures of the (CTA){sub 0.33}V{sub 2}O{sub 5}, (TBA){sub 0.16}V{sub 2}O{sub 5} nanobelts and zinc phthalocyanine exchange product were carried out. The hybrid materials based on the nanostructured vanadium oxide and zinc phthalocyanine were tested as photocatalysts for oxidation of citronellol and 2-mercaptoethanol by dioxygen.

Structural and silver/vanadium ratio effects on silver vanadium phosphorous oxide solution formation kinetics: impact on battery electrochemistry.

Science.gov (United States)

Bock, David C; Takeuchi, Kenneth J; Marschilok, Amy C; Takeuchi, Esther S

2015-01-21

The detailed understanding of non-faradaic parasitic reactions which diminish battery calendar life is essential to the development of effective batteries for use in long life applications. The dissolution of cathode materials including manganese, cobalt and vanadium oxides in battery systems has been identified as a battery failure mechanism, yet detailed dissolution studies including kinetic analysis are absent from the literature. The results presented here provide a framework for the quantitative and kinetic analyses of the dissolution of cathode materials which will aid the broader community in more fully understanding this battery failure mechanism. In this study, the dissolution of silver vanadium oxide, representing the primary battery powering implantable cardioverter defibrillators (ICD), is compared with the dissolution of silver vanadium phosphorous oxide (Ag(w)VxPyOz) materials which were targeted as alternatives to minimize solubility. This study contains the first kinetic analyses of silver and vanadium solution formation from Ag0.48VOPO4·1.9H2O and Ag2VP2O8, in a non-aqueous battery electrolyte. The kinetic results are compared with those of Ag2VO2PO4 and Ag2V4O11 to probe the relationships among crystal structure, stoichiometry, and solubility. For vanadium, significant dissolution was observed for Ag2V4O11 as well as for the phosphate oxide Ag0.49VOPO4·1.9H2O, which may involve structural water or the existence of multiple vanadium oxidation states. Notably, the materials from the SVPO family with the lowest vanadium solubility are Ag2VO2PO4 and Ag2VP2O8. The low concentrations and solution rates coupled with their electrochemical performance make these materials interesting alternatives to Ag2V4O11 for the ICD application.

Partial Oxidation of n-Butane over a Sol-Gel Prepared Vanadium Phosphorous Oxide

Directory of Open Access Journals (Sweden)

Juan M. Salazar

2013-01-01

Full Text Available Vanadium phosphorous oxide (VPO is traditionally manufactured from solid vanadium oxides by synthesizing VOHPO4∙0.5H2O (the precursor followed by in situ activation to produce (VO2P2O7 (the active phase. This paper discusses an alternative synthesis method based on sol-gel techniques. Vanadium (V triisopropoxide oxide was reacted with ortho-phosphoric acid in an aprotic solvent. The products were dried at high pressure in an autoclave with a controlled excess of solvent. This procedure produced a gel of VOPO4 with interlayer entrapped molecules. The surface area of the obtained materials was between 50 and 120 m2/g. Alcohol produced by the alkoxide hydrolysis reduced the vanadium during the drying step, thus VOPO4 was converted to the precursor. This procedure yielded non-agglomerated platelets, which were dehydrated and evaluated in a butane-air mixture. Catalysts were significantly more selective than the traditionally prepared materials with similar intrinsic activity. It is suggested that the small crystallite size obtained increased their selectivity towards maleic anhydride.

Processing, characterization, and bactericidal activity of undoped and silver-doped vanadium oxides

Energy Technology Data Exchange (ETDEWEB)

Tousley, M.E.; Wren, A.W.; Towler, M.R. [Inamori School of Engineering, Alfred University, Alfred, NY 14803 (United States); Mellott, N.P., E-mail: mellott@alfred.edu [Inamori School of Engineering, Alfred University, Alfred, NY 14803 (United States)

2012-12-14

Vanadium oxide (V) and silver-doped vanadium oxide (Ag-V) powders were prepared via sol-gel processing. Structural evolution and bactericidal activity was examined as a function of temperature ranging from 250, 350, 450 and 550 Degree-Sign C. Powders were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy. Results from all techniques showed vanadium pentoxide (V{sub 2}O{sub 5}) is the predominant phase regardless of heat treatment temperature or the addition of silver (Ag). XRD analysis suggests Ag is present as AgCl in samples heat treated to 250, 350, and 450 Degree-Sign C and as AgV{sub 6}O{sub 15} at 550 Degree-Sign C. Bactericidal activity was evaluated against Escherichia coli using the agar disk diffusion method considering both Ag-V and undoped, V powders. While the addition of Ag significantly increased bactericidal properties, the specific Ag valency, or crystal structure and morphology formed at higher temperatures, had little effect on functionality. -- Highlights: Black-Right-Pointing-Pointer Vanadium and silver-doped vanadium oxide powders were prepared via sol-gel. Black-Right-Pointing-Pointer Powders were characterized using advanced, complementary structural techniques. Black-Right-Pointing-Pointer Bactericidal activity was evaluated against E. coli. Black-Right-Pointing-Pointer Both vanadium and silver doped vanadium oxide show bactericidal activity.

Annealing effects on the structural and optical properties of vanadium oxide film obtained by the hot-filament metal oxide deposition technique (HFMOD)

Energy Technology Data Exchange (ETDEWEB)

Scarminio, Jair; Silva, Paulo Rogerio Catarini da, E-mail: scarmini@uel.br, E-mail: prcsilva@uel.br [Universidade Estadual de Londrina (UEL), PR (Brazil). Departamento de Fisica; Gelamo, Rogerio Valentim, E-mail: rogelamo@gmail.com [Universidade Federal do Triangulo Mineiro (UFTM), Uberaba, MG (Brazil); Moraes, Mario Antonio Bica de, E-mail: bmoraes@mailhost.ifi.unicamp.br [Universidade Estadual de Campinas (UNICAMP), SP (Brazil)

2017-01-15

Vanadium oxide films amorphous, nonstoichiometric and highly absorbing in the optical region were deposited on ITO-coated glass and on silicon substrates, by the hot-filament metal oxide deposition technique (HFMOD) and oxidized by ex-situ annealing in a furnace at 200, 300, 400 and 500 deg C, under an atmosphere of argon and rarefied oxygen. X-ray diffraction, Raman and Rutherford backscattering spectroscopy as well as optical transmission were employed to characterize the amorphous and annealed films. When annealed at 200 and 300 deg C the as-deposited opaque films become transparent but still amorphous. Under treatments at 400 and 500 deg C a crystalline nonstoichiometric V{sub 2}O{sub 5} structure is formed. All the annealed films became semiconducting, with their optical absorption coefficients changing with the annealing temperature. An optical gap of 2.25 eV was measured for the films annealed at 400 and 500 deg C. The annealing in rarefied oxygen atmosphere proved to be a useful and simple ex-situ method to modulate the structural and optical properties of vanadium oxide films deposited by HFMOD technique. This technique could be applied to other amorphous and non-absorbing oxide films, replacing the conventional and sometimes expensive method of modulate desirable film properties by controlling the film deposition parameters. Even more, the HFMOD technique can be an inexpensive alternative to deposit metal oxide films. (author)

Investigation of structural, morphological and electrical properties of APCVD vanadium oxide thin films

International Nuclear Information System (INIS)

Papadimitropoulos, Georgios; Trantalidis, Stelios; Tsiatouras, Athanasios; Vasilopoulou, Maria; Davazoglou, Dimitrios; Kostis, Ioannis

2015-01-01

Vanadium oxide films were chemically vapor deposited (CVD) on oxidized Si substrates covered with CVD tungsten (W) thin films and on glass substrates covered with indium tin oxide (ITO) films, using vanadium(V) oxy-tri-isopropoxide (C 9 H 21 O 4 V) vapors. X-ray diffraction (XRD) measurements showed that the deposited films were composed of a mixture of vanadium oxides; the composition was determined mainly by the deposition temperature and less by the precursor temperature. At temperatures up to 450 C the films were mostly composed by monoclinic VO 2 . Other peaks corresponding to various vanadium oxides were also observed. X-ray microanalysis confirmed the composition of the films. The surface morphology was studied with atomic force microscopy (AFM) and scanning electron microscopy (SEM). These measurements revealed that the morphology strongly depends on the used substrate and the deposition conditions. The well-known metal-insulator transition was observed near 75 C for films mostly composed by monoclinic VO 2 . Films deposited at 450 C exhibited two transitions one near 50 C and the other near 60 C possibly related to the presence of other vanadium phases or of important stresses in them. Finally, the vanadium oxide thin films exhibited significant sensory capabilities decreasing their resistance in the presence of hydrogen gas with response times in the order of a few seconds and working temperature at 40 C. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Vanadium oxide nanotubes as cathode material for Mg-ion batteries

DEFF Research Database (Denmark)

Christensen, Christian Kolle; Sørensen, Daniel Risskov; Bøjesen, Espen Drath

Vanadium oxide compounds as cathode material for secondary Li-ion batteries gained interest in the 1970’s due to high specific capacity (>250mAh/g), but showed substantial capacity fading.1 Developments in the control of nanostructured morphologies have led to more advanced materials, and recently...... vanadium oxide nanotubes (VOx-NT) were shown to perform well as a cathode material for Mg-ion batteries.2 The VOx-NTs are easily prepared via a hydrothermal process to form multiwalled scrolls of VO layer with primary amines interlayer spacer molecules.3 The tunable and relative large layer spacing 1-3 nm...... synchrotron powder X-ray diffraction measured during battery operation. These results indicate Mg-intercalation in the multiwalled VOx-NTs occurs within the space between the individual vanadium oxide layers while the underlying VOx frameworks constructing the walls are affected only to a minor degree...

Vanadium oxide monolayer catalysts : The vapor-phase oxidation of methanol

NARCIS (Netherlands)

Roozeboom, Fred; Cordingley, Peter D.; Gellings, P.J.

1981-01-01

The oxidation of methanol over vanadium oxide, unsupported and applied as a monolayer on γ-Al2O3, CeO2, TiO2, and ZrO2, was studied between 100 and 400 °C in a continuous-flow reactor. At temperatures from 150 to about 250 °C two main reactions take place, (a) dehydration of methanol to dimethyl

Vanadium Doped Tungsten Oxide Material - Electrical Physical and Sensing Properties

Directory of Open Access Journals (Sweden)

Shishkin N. Y.

2008-05-01

Full Text Available The electrical physical and sensing (to VOCs and inorganic gases properties of vanadium doped tungsten oxide in the regions of phase transition temperature were investigated. Vanadium oxide (II dimerization was observed in the doped material, corresponding to new phase transition. The extreme sensitivity and selectivity to chemically active gases and vapors in small concentrations: CO, NOx, NH3 acetone, ethanol near phase transitions temperature was found. Sensor elements were manufactured for the quantitative detection (close to 1 ppm of alcohol and ammonia.

Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

Science.gov (United States)

Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

2013-09-01

We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

Raman and XPS characterization of vanadium oxide thin films with temperature

Energy Technology Data Exchange (ETDEWEB)

Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

2017-05-01

Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

Self-assembling Synthesis of Vanadium Oxide Nanotubes and Simple Determination of the Content of Ⅴ(Ⅳ)

Institute of Scientific and Technical Information of China (English)

MAI Li-qiang; CHEN Wen; XU Qing; ZHU Quan-yao; HAN Chun-hua; PENG Jun-feng

2003-01-01

High-yielding low-cost vanadium oxide nanotubes were prepared by the hydrothermal self-assembling process from vanadium pentoxide and organic molecules as structure-directing templates. Moreover, a new method was discovered for determining the content of V (Ⅳ) in vanadium oxide nanotubes by thermogravimetric analysis ( TGA ). This method is simple, precise and feasible and can be extended to determine the content of low oxidation state in the other transition metal oxide nanomaterials.

Nature of active vanadium nanospecies in MCM-41 type catalysts for olefins oxidation

Energy Technology Data Exchange (ETDEWEB)

Chanquía, Corina M., E-mail: cchanquia@cab.cnea.gov.ar [Centro Atómico Bariloche, Comisión Nacional de Energía Atómica (CAB-CNEA). Av. Bustillo 9500, R8402AGP, San Carlos de Bariloche, Río Negro (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET). Avenida Rivadavia 1917, C1033AAJ, Ciudad Autónoma de Buenos Aires (Argentina); Cánepa, Analía L. [Centro de Investigación y Tecnología Química (CITeQ), Universidad Tecnológica Nacional, Facultad Regional Córdoba (UTN-FRC), Maestro López esq. Cruz Roja Argentina, Ciudad Universitaria, 5016, Córdoba Capital (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET). Avenida Rivadavia 1917, C1033AAJ, Ciudad Autónoma de Buenos Aires (Argentina); Winkler, Elin L. [Centro Atómico Bariloche, Comisión Nacional de Energía Atómica (CAB-CNEA). Av. Bustillo 9500, R8402AGP, San Carlos de Bariloche, Río Negro (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET). Avenida Rivadavia 1917, C1033AAJ, Ciudad Autónoma de Buenos Aires (Argentina); and others

2016-06-01

A multi-technique physicochemical investigation including UV–Vis-DRS, Raman spectroscopy, XPS, ESR and FTIRS with pyridine adsorption was performed to analyze the nature of different vanadium nanospecies present on MCM-41 type catalysts. By employing a direct hydrothermal synthesis, vanadium species were incorporated into siliceous structure mainly as tetrahedrally coordinated isolated V{sup δ+} ions, which would be located inside the wall and on the wall surface of the mesoporous channels. The coexistence of both vanadium oxidation states V{sup 4+} and V{sup 5+} was also revealed. Acidity measurements permitted to infer about the majority presence of Lewis acid sites, which increase with vanadium content. The catalytic performance of these materials was evaluated in the reaction of α-pinene oxidation with H{sub 2}O{sub 2}. The highest intrinsic activity of the sample with lower V loading was attributed to the high dispersion and efficiency of the isolated V{sup δ+} species that actuate as active sites. A mixture of reaction products arising from competitive processes of epoxidation and allylic oxidation was found. - Highlights: • Nature of vanadium nanospecies in mesoporous silicates was investigated. • From hydrothermal sol–gel synthesis, isolated V{sup δ+} sites were mainly generated. • The coexistence of both vanadium oxidation states V{sup 4+} and V{sup 5+} was revealed. • The catalytic performance was evaluated in α-pinene oxidation with H{sub 2}O{sub 2}. • The high catalytic activity is attributed to high dispersion of isolated V{sup δ+} ions.

One-step hydrothermal synthesis of hexangular starfruit-like vanadium oxide for high power aqueous supercapacitors

Science.gov (United States)

Shao, Jie; Li, Xinyong; Qu, Qunting; Zheng, Honghe

2012-12-01

Homogenous hexangular starfruit-like vanadium oxide was prepared for the first time by a one-step hydrothermal method. The assembly process of hexangular starfruit-like structure was observed from TEM images. The electrochemical performance of starfruit-like vanadium oxide was examined by cyclic voltammetry and galvanostatic charge/discharge. The obtained starfruit-like vanadium oxide exhibits a high power capability (19 Wh kg-1 at the specific power of 3.4 kW kg-1) and good cycling stability for supercapacitors application.

Optical and electrochromic properties of sol-gel deposited Ti- doped vanadium oxide films

International Nuclear Information System (INIS)

Oezer, N.; Sabuncu, S.

1997-01-01

Because of the yellowish color, vanadium oxide films in the as deposited state is not as favorable as transparent coatings for most elector chromic devices. an interesting possibility to alter the yellowish colours is the doping with other non-absorbing metal oxides. Ti doped vanadium oxide films with various amounts of titanium were synthesized and investigated as transparent counter electrodes for electrochromic transmissive device application. Electrochromic titanium doped vanadium pentoxide (V sub 2 O 5) coatings were prepared by the sol-gel dip coating technique. The coating solutions were synthesized from vanadium tri(isopropoxide) precursors. X-ray diffraction (XRD) studies showed that the sol-gel deposited doped films heat treated at temperatures below 350 degree centigrade, were amorphous, whereas hose heat treated at higher temperatures were slight y crystalline. The optical and electrochemical properties of the Ti doped vanadium oxide films has been investigated in 0.1 m LiClO sub 4 propylene carbonate solution color changes by dropping were noted for all investigated films exhibits good electrochemical cycling (CV) measurements also showed that Ti doped V sub 2 O sub 5 films exhibits good electrochemical cycling reversibility, 'in situ' optical measurement revealed that those films exhibits good electrochemical cycling the spectra range 300 < lambda < 800 nm and change color between yellow and light green. The change in visible transmittance was 25 % for 5% Ti doped film. (author)

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Optical modulation in silicon-vanadium dioxide photonic structures

Science.gov (United States)

Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

2017-08-01

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

Lithium insertion in sputtered vanadium oxide film

DEFF Research Database (Denmark)

West, K.; Zachau-Christiansen, B.; Skaarup, S.V.

1992-01-01

were oxygen deficient compared to V2O5. Films prepared in pure argon were reduced to V(4) or lower. The vanadium oxide films were tested in solid-state lithium cells. Films sputtered in oxygen showed electrochemical properties similar to crystalline V2O5. The main differences are a decreased capacity...

XPS study of vanadium surface oxidation by oxygen ion bombardment

Czech Academy of Sciences Publication Activity Database

Alov, N.; Kutsko, D.; Spirovová, Ilona; Bastl, Zdeněk

2006-01-01

Roč. 600, č. 8 (2006), s. 1628-1631 ISSN 0039-6028 R&D Projects: GA ČR GA104/04/0467 Institutional research plan: CEZ:AV0Z40400503 Keywords : vanadium oxide * oxide film * ion-beam oxidation * X-ray photoelectron spectroscopy Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.880, year: 2006

Improving methane gas sensing properties of multi-walled carbonnanotubes by vanadium oxide filling

CSIR Research Space (South Africa)

Chimowa, George

2017-08-01

Full Text Available Manipulation of electrical properties and hence gas sensing properties of multi-walled carbon nanotubes (MWNTs) by filling the inner wall with vanadium oxide is presented. Using a simple capillary technique, MWNTs are filled with vanadium metal...

Vanadium

Science.gov (United States)

Kelley, Karen D.; Scott, Clinton T.; Polyak, Désirée E.; Kimball, Bryn E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

sands, and oil shales may be important future sources.Vanadium occurs in one of four oxidation states in nature: +2, +3, +4, and +5. The V3+ ion has an octahedral radius that is almost identical to that of (Fe3+) and (Al3+) and, therefore, it substitutes in ferromagnesian minerals. During weathering, much of the vanadium may partition into newly formed clay minerals, and it either remains in the +3 valence state or oxidizes to the +4 valence state, both of which are relatively insoluble. If erosion is insignificant but chemical leaching is intense, the residual material may be enriched in vanadium, as are some bauxites and laterites. During the weathering of igneous, residual, or sedimentary rocks, some vanadium oxidizes to the +5 valence state, especially in the intensive oxidizing conditions that are characteristic of arid climates.The average contents of vanadium in the environment are as follows: soils [10 to 500 parts per million (ppm)]; streams and rivers [0.2 to 2.9 parts per billion (ppb)]; and coastal seawater (0.3 to 2.8 ppb). Concentrations of vanadium in soils (548 to 7,160 ppm) collected near vanadium mines in China, the Czech Republic, and South Africa are many times greater than natural concentrations in soils. Additionally, if deposits contain sulfide minerals such as chalcocite, pyrite, and sphalerite, high levels of acidity may be present if sulfide dissolution is not balanced by the presence of acid-neutralizing carbonate minerals. Some of the vanadium-bearing deposit types, particularly some SSV and black-shale deposits, contain appreciable amounts of carbonate minerals, which lowers the acid-generation potential.Vanadium is a micronutrient with a postulated requirement for humans of less than 10 micrograms per day, which can be met through dietary intake. Primary and secondary drinking water regulations for vanadium are not currently in place in the United States. Vanadium toxicity is thought to result from an intake of more than 10 to 20 milligrams

Positron annihilation in sodium and copper β-vanadium oxide bronzes

International Nuclear Information System (INIS)

Dryzek, J.; Rogowska, E.

1990-01-01

Studies of copper and sodium β-vanadium oxide bronzes are performed using positron annihilation measured with a long slit angular correlation apparatus. The dependences of peak coincidence rate on temperature (40 to 310deg C) are obtained for different concentrations of donor atoms in the case of copper vanadium oxide bronzes. A three-states model corresponding to the annihilation of positrons in donor atom sublattice is applied for the description of the experimental data. The creation enthalpy of vacancies for that sublattice is equal to (0.60 ± 0.01) eV for Na 0.33 V 2 O 5 and equal to (0.64 ± 0.01) eV for Cu x V 2 O 5 . (author)

Growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(1 1 1) studied by STM and DFT

International Nuclear Information System (INIS)

Chan, Lap Hong; Hayazaki, Shinji; Ogawa, Kokushi; Yuhara, Junji

2013-01-01

Highlights: ► We studied the growth and structure of Si and Ge in vanadium oxide nanomesh on Pd(1 1 1) by STM and DFT calculations. ► All the Si atoms formed isolated Si nanoclusters. ► Some Ge atoms formed monomer Ge nanodots on Pd(1 1 1), while the others formed isolated Ge nanoclusters. - Abstract: The growth of silicon (Si)/germanium (Ge) atoms in a well ordered (4 × 4) vanadium (V) oxide nanomesh on Pd(1 1 1) prepared by ultra-high-vacuum evaporation has been studied by scanning tunneling microscopy (STM) and ab initio density functional theory (DFT) calculations. At the very beginning of the Si deposition, all of the Si atoms deposited were adsorbed on top of the V-oxide nanomesh, forming Si nanoclusters, and each Si atom formed was isolated other Si atoms. Two different adsorption sites for Si atoms were observed by STM. In the case of Ge deposition, some Ge atoms filled the vanadium oxide nanoholes, forming Ge nanodots on Pd(1 1 1), while the others were adsorbed on top of the V-oxide nanomesh, forming isolated Ge nanoclusters. The ab initio DFT total-energy calculations indicated that the Ge atoms occupying the nanohole were more stable than those adsorbed on the nanomesh. The simulated images were highly consistent with the experimental STM images with the exception of the Ge nanodots, which exhibited a large, uniform protrusion in the STM images. Therefore, the adsorbed atom might be mobile in the nanohole at room temperature, possibly as a result of interaction with the STM tip.

Fluorometric determination of vanadium (V) by utilizing its catalytic effect on the oxidation of o-aminophenol by chlorate

Energy Technology Data Exchange (ETDEWEB)

Hiraki, K; Shimizu, N; Nishikawa, Y [Kinki Univ., Higashi-Osaka, Osaka (Japan). Faculty of Science and Technology; Shigematsu, T

1981-12-01

The oxidation of o-aminophenol by chlorate ion takes place in acidic milieu and is catalyzed by a trace amount of vanadium (V). Vanadium (V) oxidizes o-aminophenol to 2-amino-3-phenoxazone, then the vanadium (IV) produced is reoxidized to vanadium (V) by the sodium chlorate. Further oxidation of o-aminophenol proceeds by repetition of these reactions. The oxidation product (2-amino-3-phenoxazone) gives an intense fluorescence; under optimum conditions, the fluorescence intensity is proportional to the concentration of vanadium. The most suitable concentration of o-aminophenol and sodium chlorate for the determination of vanadium (V) were found to be 0.02 M and 2 x 10/sup -4/ M, respectively. From 0.1 ppm to 5 ppm of vanadium (V) can be determined under the optimum conditions; reaction temperature 50/sup 0/C, reaction time 2 h, and at pH 2 +- 0.2. If the reaction time is increased to 3 h at 55/sup 0/C, the method may be extended from 2 ppb to 15 ppb of vanadium. Interferences of diverse ions were tested, among which Fe (III) and Mn (VII) caused positive errors, and Cr (VI), Mo (VI) negative errors if present in 40 fold w/w ratio to V (V).

Vanadium recovery process

International Nuclear Information System (INIS)

Pyrih, R.Z.; Rickard, R.S.

1978-01-01

A process for recovering vanadium values from carbonaceous type vanadium ores, and vanadium scrap, such as vanadium contaminated spent catalyst, is disclosed which comprises roasting the vanadium containing material in air at a temperature less than about 600 0 C to produce a material substantially devoid of organic matter, subjecting said roasted material to a further oxidizing roast in an oxygen atmosphere at a temperature of at least about 800 0 C for a period sufficient to convert substantially all of the vanadium to the soluble form, leaching the calcine with a suitable dilute mineral acid or water at a pH of neutral to about 2 to recover vanadium values, precipitating vanadium values as iron vanadate from the leach solution with a soluble iron compound at a pH from neutral to about 1, and recovering ferrovanadium from the iron vanadate by a reduction vacuum smelting operation. The conversion of vanadium in the ore to the soluble form by the oxidizing roast is accomplished without the addition of an alkaline salt during calcining

Decomposition of hydrogen peroxide on nickel oxide - vanadium pentoxide catalysts and the effect of ionizing radiation on them

International Nuclear Information System (INIS)

Mucka, V.

1984-01-01

Some physico-chemical and catalytic properties of nickel oxide-vanadium pentoxide two-component catalysts were studied over the entire concentration range of the components, using the decomposition of hydrogen peroxide in an aqueous solution as the test reaction. The two oxides were found to affect each other; this was shown by the dependences of the specific surface area, the V 4+ ion concentration, and the catalyst activity on the system composition. At low vanadium pentoxide concentrations (up to 15 mol%) the reaction took place on nickel oxide modified with vanadium pentoxide, whereas in the region of higher vanadium pentoxide concentrations the decomposition of the peroxide was catalyzed primarily in the homogeneous phase by vanadium(V) peroxide ions; in a sample with 30 mol% V 2 O 5 , trivalent vanadium also played a part. With catalysts obtained by mere mechanical mixing of the two oxides, a modified activity was observed in the region of high excess of nickel oxide. The activity of catalyst, particularly pure nickel oxide, was increased by its partial reduction and decreased by its exposure to gamma radiation if the dose was higher than 10 5 Gy. The effects observed are interpreted in terms of the concept of bivalent catalytic centres. (author)

Sulfonated graphene oxide/nafion composite membrane for vanadium redox flow battery.

Science.gov (United States)

Kim, Byung Guk; Han, Tae Hee; Cho, Chang Gi

2014-12-01

Nafion is the most frequently used as the membrane material due to its good proton conductivity, and excellent chemical and mechanical stabilities. But it is known to have poor barrier property due to its well-developed water channels. In order to overcome this drawback, graphene oxide (GO) derivatives were introduced for Nafion composite membranes. Sulfonated graphene oxide (sGO) was prepared from GO. Both sGO and GO were treated each with phenyl isocyanate and transformed into corresponding isGO and iGO in order to promote miscibility with Nafion. Then composite membranes were obtained, and the adaptability as a membrane for vanadium redox flow battery (VRFB) was investigated in terms of proton conductivity and vanadium permeability. Compared to a pristine Nafion, proton conductivities of both isGO/Nafion and iGO/Nafion membranes showed less temperature sensitivity. Both membranes also showed quite lower vanadium permeability at room temperature. Selectivity of the membrane was the highest for isGO/Nafion and the lowest for the pristine Nafion.

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Statistical analysis on hollow and core-shell structured vanadium oxide microspheres as cathode materials for Lithium ion batteries

Directory of Open Access Journals (Sweden)

Xing Liang

2018-06-01

Full Text Available In this data, the statistical analyses of vanadium oxide microspheres cathode materials are presented for the research article entitled “Statistical analyses on hollow and core-shell structured vanadium oxides microspheres as cathode materials for Lithium ion batteries” (Liang et al., 2017 [1]. This article shows the statistical analyses on N2 adsorption-desorption isotherm and morphology vanadium oxide microspheres as cathode materials for LIBs. Keywords: Adsorption-desorption isotherm, Pore size distribution, SEM images, TEM images

Vanadium oxide thin films and fibers obtained by acetylacetonate sol–gel method

Energy Technology Data Exchange (ETDEWEB)

Berezina, O.; Kirienko, D. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Pergament, A., E-mail: aperg@psu.karelia.ru [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Stefanovich, G.; Velichko, A. [Department of Physical Engineering, Petrozavodsk State University, 185910 Petrozavodsk (Russian Federation); Zlomanov, V. [Department of Chemistry, Moscow State University, 119991 Moscow (Russian Federation)

2015-01-01

Vanadium oxide films and fibers have been fabricated by the acetylacetonate sol–gel method followed by annealing in wet nitrogen. The samples are characterized by X-ray diffraction and electrical conductivity measurements. The effects of a sol aging, the precursor decomposition and the gas atmosphere composition on the annealing process, structure and properties of the films are discussed. The two-stage temperature regime of annealing of amorphous films in wet nitrogen for formation of the well crystallized VO{sub 2} phase is chosen: 1) 25–550 °C and 2) 550–600 °C. The obtained films demonstrate the metal–insulator transition and electrical switching. Also, the effect of the polyvinylpyrrolidone additive concentration and electrospinning parameters on qualitative (absence of defects and gel drops) and quantitative (length and diameter) characteristics of vanadium oxide fibers is studied. - Highlights: • Vanadium oxide thin films and fibers are synthesized by sol–gel method. • The effect of annealing, atmosphere, time and electrospinning parameters is studied. • Produced VO{sub 2} structures exhibit metal–insulator transition and electrical switching.

Ethylenediamine-functionalized graphene oxide incorporated acid-base ion exchange membranes for vanadium redox flow battery

International Nuclear Information System (INIS)

Liu, Shuai; Li, Dan; Wang, Lihua; Yang, Haijun; Han, Xutong; Liu, Biqian

2017-01-01

Highlights: • Ethylenediamine functionalized graphene oxide. • Layered structure of functionalized graphene oxide block vanadium ions crossover. • Protonated N-containing groups suppress vanadium ions permeation. • Ion transport channels are narrowed by electrostatic interactions. • Vanadium crossover decreased due to enhanced Donnan effect and special structure. - Abstract: As a promising large-scale energy storage battery, vanadium redox flow battery (VRFB) is urgently needed to develop cost-effective membranes with excellent performance. Novel acid-base ion exchange membranes (IEMs) are fabricated based on sulfonated poly(ether ether ketone) (SPEEK) matrix and modified graphene oxide (GO) by solution blending. N-based functionalized graphene oxide (GO-NH 2 ) is fabricated by grafting ethylenediamine onto the edge of GO via a facile method. On one hand, the impermeable layered structures effectively block ion transport pathway to restrain vanadium ions crossover. On the other hand, acid-base pairs form between −SO 3 − groups and N-based groups on the edge of GO nanosheets, which not only suppress vanadium ions contamination but also provide a narrow pathway for proton migration. The structure is beneficial for achieving an intrinsic balance between conductivity and permeability. By altering amounts of GO-NH 2 , a sequence of acid-base IEMs are characterized in detail. The single cells assembled with acid-base IEMs show self-discharge time for 160 h, capacity retention 92% after 100 cycle, coulombic efficiency 97.2% and energy efficiency 89.5%. All data indicate that acid-base IEMs have promising prospects for VRFB applications.

Heterogeneous catalysis in the liquid-phase oxidation of olefins--3. The activity of supported vanadium-chromium binary oxide catalyst for the oxidation of cyclohexene

Energy Technology Data Exchange (ETDEWEB)

Takehira, K; Hayakawa, T; Ishikawa, T

1979-03-01

The activity of supported vanadium-chromium binary oxide catalyst for the oxidation of cyclohexene to 1-cyclohexenyl hydroperoxide, 2-cyclohexene-1-one, 2-cyclohexene-1-ol, and cyclohexene oxide was due to the interaction between the metal oxides and the carriers. The oxidation reaction was carried out in benzene at 60/sup 0/C for four hours with the binary oxide supported on (GAMMA)-alumina or silica; three series of catalysts were prepared by combining the vanadium and chromium oxide components with alumina hydrate or silica sol by a kneading method. The silica-supported catalysts had the greatest activity, the highest being the V/sub 2/O/sub 5//SiO/sub 2/ system, which lost its activity quickly during the reaction. This was followed in activity by the Cr/sub 2/O/sub 3//SiO/sub 2/ system, containing the chromium(V) species. The Cr/sub 2/O/sub 3//Al/sub 2/O/sub 3/ system also had high activity and the chromium(V) species. The vanadium and chromium metal ions are probably coordinated tetrahedrally on the support, and these complexes catalyze cyclohexene autoxidation by decomposing 1-cyclohexenyl hydroperoxide.

Additive for vanadium and sulfur oxide capture in catalytic cracking

International Nuclear Information System (INIS)

Chin, A.A.; Sapre, A.V.; Sarli, M.S.

1991-01-01

This patent describes a fluid catalytic cracking process in which a hydrocarbon feedstock. It comprises: a vanadium contaminant in an amount of a least 2 ppmw is cracked under fluid catalytic cracking conditions with a solid, particulate cracking catalyst to produce cracking products of lower molecular weight while depositing carbonaceous material on the particles of cracking catalyst, separating the particles of cracking catalyst from the cracking products in the disengaging zone and oxidatively regenerating the cracking catalyst by burning off the deposited carbonaceous material in a regeneration zone, the improvement comprising reducing the make-up rate of the cracking catalyst by contacting the cracking feed with a particulate additive composition for passivating the vanadium content of the feed, comprising an alkaline earth metal oxide and an alkaline earth metal spinel

Electrochemical studies on vanadium oxides, 9

International Nuclear Information System (INIS)

Miura, Takashi; Yamamoto, Masahiro; Takahashi, Hirobumi; Kishi, Tomiya; Nagai, Takashi

1979-01-01

The mechanism of the anodic oxidation of various organic compounds-including methanol, formaldehyde, formic acid, ethanol, acetaldehyde and acetic acid-at illuminated vanadium pentoxide (V 2 O 5 ) single crystal electrodes were investigated in aqueous solutions of an H 2 SO 4 -K 2 SO 4 system of about pH 2, in which oxygen evolution from water molecules had previously been confirmed to occur with a current efficiency of about 100%. It was shown that all the organics were oxidized by the so called hole-current doubling mechanism, and that the oxygen evolution reaction, which competed with the above oxidation reaction at the hole-capturing step from the valence band of the electrode, proceeded by the simple hole-capturing mechanism, not followed by an electron injection step into the conduction band. Furthermore, it is considered that chloride ions added to the electrolytes tended to hinder hole-current doubling oxidation owing to their reactivity with the holes at the illuminated V 2 O 5 electrodes. (author)

A method for recovery of iron, titanium, and vanadium from vanadium-bearing titanomagnetite

Science.gov (United States)

Zhang, Yi-min; Wang, Li-na; Chen, De-sheng; Wang, Wei-jing; Liu, Ya-hui; Zhao, Hong-xin; Qi, Tao

2018-02-01

An innovative method for recovering valuable elements from vanadium-bearing titanomagnetite is proposed. This method involves two procedures: low-temperature roasting of vanadium-bearing titanomagnetite and water leaching of roasting slag. During the roasting process, the reduction of iron oxides to metallic iron, the sodium oxidation of vanadium oxides to water-soluble sodium vanadate, and the smelting separation of metallic iron and slag were accomplished simultaneously. Optimal roasting conditions for iron/slag separation were achieved with a mixture thickness of 42.5 mm, a roasting temperature of 1200°C, a residence time of 2 h, a molar ratio of C/O of 1.7, and a sodium carbonate addition of 70wt%, as well as with the use of anthracite as a reductant. Under the optimal conditions, 93.67% iron from the raw ore was recovered in the form of iron nugget with 95.44% iron grade. After a water leaching process, 85.61% of the vanadium from the roasting slag was leached, confirming the sodium oxidation of most of the vanadium oxides to water-soluble sodium vanadate during the roasting process. The total recoveries of iron, vanadium, and titanium were 93.67%, 72.68%, and 99.72%, respectively.

Structural, optical and electrochemical properties of F-doped vanadium oxide transparent semiconducting thin films

Energy Technology Data Exchange (ETDEWEB)

Mousavi, M.; Khorrami, G.H. [University of Bojnord, Department of Physics, Faculty of Basic Science, Bojnord (Iran, Islamic Republic of); Kompany, A. [Ferdowsi University of Mashhad, Department of Physics, Mashhad (Iran, Islamic Republic of); Yazdi, S.T. [Payame Noor University (PNU), Department of Physics, Tehran (Iran, Islamic Republic of)

2017-12-15

In this study, F-doped vanadium oxide thin films with doping levels up to 60 at % were prepared by spray pyrolysis method on glass substrates. To measure the electrochemical properties, some films were deposited on fluorine-tin oxide coated glass substrates. The effect of F-doping on the structural, electrical, optical and electrochemical properties of vanadium oxide samples was investigated. The X-ray diffractographs analysis has shown that all the samples grow in tetragonal β-V{sub 2}O{sub 5} phase structure with the preferred orientation of [200]. The intensity of (200) peak belonging to β-V{sub 2}O{sub 5} phase was strongest in the undoped vanadium oxide film. The scanning electron microscopy images show that the samples have nanorod- and nanobelt-shaped structure. The size of the nanobelts in the F-doped vanadium oxide films is smaller than that in the pure sample and the width of the nanobelts increases from 30 to 70 nm with F concentration. With increasing F-doping level from 10 to 60 at %, the resistivity, the transparency and the optical band gap decrease from 111 to 20 Ω cm, 70 to 50% and 2.4 to 2.36 eV, respectively. The cyclic voltammogram (CV) results show that the undoped sample has the most extensive CV and by increasing F-doping level from 20 to 60 at %, the area of the CV is expanded. The anodic and cathodic peaks in F-doped samples are stronger. (orig.)

Comparative ion insertion study into a nanostructured vanadium oxide in aqueous salt solutions

Energy Technology Data Exchange (ETDEWEB)

Yuan, Q.; Ren, S. L.; Zukowski, J.; Pomeroy, M.; Soghomonian, V., E-mail: soghomon@vt.edu [Department of Physics, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2014-07-07

We present a comparative study for the electrochemical insertion of different cations into a nanostructured vanadium oxide material. The oxide is hydrothemally synthesized and electrically characterized by variable temperature measurements. The electrochemical reactions are performed in aqueous chloride solutions of lithium, sodium, potassium, and ammonium, and the electrochemical behavior of various cycles are correlated with visual changes in the vanadium oxide nanosheets as observed by scanning electron microscopy. We note an increase in the specific charge per cycle in the cases of sodium and ammonium ions only, correlated with minimal physical changes to the nanosheets. The differing behavior of the various ions has implications for their use in electrical energy storage applications.

Controlled synthesis and electrochemical properties of vanadium oxides with different nanostructures

International Nuclear Information System (INIS)

Zhang, Yifu; Zhou, Min; Huang, Chi; Chen, Chongxue; Cao, Yuliang; Fan, Meijuan; Li, Houbin; Liu, Xinghai; Xie, Guangyong

2012-01-01

Vanadium oxides (V 3 O 7 .H 2 O and VO 2 ) with different morphologies have been selectively synthesized by a facile hydrothermal approach using glucose as the reducing and structure-directing reagent. The as-obtained V 3 O 7 .H 2 O nanobelts have a length up to several tens of micrometers, width of about 60-150 nm and thickness of about 5-10 nm, while the as-prepared VO 2 (B) nanobelts have a length of about 1.0- 7 μm, width, 80-140 nm and thickness, 2-8 nm. It was found that the quantity of glucose, the reaction temperature and the reaction time had significant influence on the compositions and morphologies of final products. Vanadium oxides with different morphologies were easily synthesized by controlling the concentration of glucose. The formation mechanism was also briefly discussed, indicating that glucose played different roles in synthesizing various vanadium oxides. The phase transition from VO 2 (B) to VO 2 (M) were investigated and the phase transition temperature of the VO 2 (M) appeared at around 68 deg C. Furthermore, the electrochemical properties of V 3 O 7 .H 2 O nanobelts, VO 2 (B) nanobelts and VO 2 (B) nanosheets were investigated and they exhibited a high initial discharge capacity of 296, 247 and 227 mAh/g, respectively. (author)

Hysteresis phenomena at metal-semiconductor phase transformation in vanadium oxides

International Nuclear Information System (INIS)

Lanskaya, T.G.; Merkulov, I.A.; Chudnovski , F.A.

1978-01-01

The hysteresis phenomena during the metal-semiconductor phase transformation (MSPT) in vanadium oxides are investigated. It is shown experimentally that the hysteresis effects during MSPT in vanadium oxides are associated not only with the martensite nature of the transformation, but also with activation processes. It is shown that the hysteresis phenomena during MSPT may be described by the distribution function of microregions of the crystal in the phase transformation temperature T 0 and the coercive temperature Tsub(c). An experimental method for constructing this distribution function was worked out. An analysis of the experimental data shows that finely dispersed films are characterized by a wide range of values of T 0 and Tsub(c) (55 deg C 0 <65 deg C, 6 deg C< Tsub(c)<12 deg C). The peculiarities of the optical recording of information on monocrystal and finely dispersed films are considered

Researches on vanadium and its compounds; Recherches sur le Vanadium et ses composes

Energy Technology Data Exchange (ETDEWEB)

Morette, Andre

1937-06-03

In this research thesis, the author proposes a new study of the action of some reduction agents on two groups of vanadium compounds, oxides and chlorides. Thus, he reports the study of the circumstances of reduction of vanadium oxides by carbon and of vanadium carburization from these compounds. He also reports the determination of the composition of vanadium melts obtained at high temperatures (either in a vacuum furnace or with an electric arc furnace). In order to determine in which conditions the processing of vanadium oxides could produce the pure metal, the author studied the action of calcium and magnesium on the vanadium pentoxide and trioxide. The second part of the thesis addresses the preparation of pure vanadium from vanadium anhydride chlorides. Then, the author reports the development of processes which could easily produce powdered vanadium [French] Nous nous sommes propose de reprendre l'etude de l'action de quelques reducteurs sur les deux groupes de composes du vanadium, oxydes et chlorures. Nous avons ete ainsi amene a preciser les circonstances de la reduction des oxydes de vanadium par le carbone et de la carburation du vanadium a partir de ceux-ci, puis a determiner la constitution des fontes de vanadium obtenues a haute temperature, soit au four a vide, soit au four a arc. D'autre part, en vue de determiner dans quelles conditions le traitement des oxydes de vanadium pourrait conduire au metal pur, nous avons repris et complete des travaux anterieurs concernant l'action du calcium et du magnesium sur le pentoxyde ou eventuellement le trioxyde de vanadium. Une seconde partie de notre these a ete consacree a la preparation du vanadium pur a partir des chlorures anhydres de vanadium. Nous nous sommes attache a trouver le mode operatoire le plus favorable pour l'obtention de chacun d'eux. Il nous a ete donne ainsi l'occasion de preciser certaines de leurs proprietes physiques et chimiques. Puis, a la suite d'essais systematiques, nous avons

Roll-to-Roll Processing of Inverted Polymer Solar Cells using Hydrated Vanadium(V)Oxide as a PEDOT:PSS Replacement

DEFF Research Database (Denmark)

Martinez, Nieves Espinosa; Dam, Henrik Friis; Tanenbaum, David M.

2011-01-01

roll-to-roll (R2R) processing of all layers. The devices were prepared on flexible polyethyleneterphthalate (PET) and had the structure PET/ITO/ZnO/P3HT:PCBM/V2O5·(H2O)n/Ag. The ITO and silver electrodes were processed and patterned by use of screen printing. The zinc oxide, P3HT:PCBM and vanadium(V)oxide......The use of hydrated vanadium(V)oxide as a replacement of the commonly employed hole transporting material PEDOT:PSS was explored in this work. Polymer solar cells were prepared by spin coating on glass. Polymer solar cells and modules comprising 16 serially connected cells were prepared using full...... layers were processed by slot-die coating. The hydrated vanadium(V)oxide layer was slot-die coated using an isopropanol solution of vanadyl-triisopropoxide (VTIP). Coating experiments were carried out to establish the critical thickness of the hydrated vanadium(V)oxide layer by varying the concentration...

Vanadium supersaturated silicon system: a theoretical and experimental approach

Science.gov (United States)

Garcia-Hemme, Eric; García, Gregorio; Palacios, Pablo; Montero, Daniel; García-Hernansanz, Rodrigo; Gonzalez-Diaz, Germán; Wahnon, Perla

2017-12-01

The effect of high dose vanadium ion implantation and pulsed laser annealing on the crystal structure and sub-bandgap optical absorption features of V-supersaturated silicon samples has been studied through the combination of experimental and theoretical approaches. Interest in V-supersaturated Si focusses on its potential as a material having a new band within the Si bandgap. Rutherford backscattering spectrometry measurements and formation energies computed through quantum calculations provide evidence that V atoms are mainly located at interstitial positions. The response of sub-bandgap spectral photoconductance is extended far into the infrared region of the spectrum. Theoretical simulations (based on density functional theory and many-body perturbation in GW approximation) bring to light that, in addition to V atoms at interstitial positions, Si defects should also be taken into account in explaining the experimental profile of the spectral photoconductance. The combination of experimental and theoretical methods provides evidence that the improved spectral photoconductance up to 6.2 µm (0.2 eV) is due to new sub-bandgap transitions, for which the new band due to V atoms within the Si bandgap plays an essential role. This enables the use of V-supersaturated silicon in the third generation of photovoltaic devices.

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Effect of thermal treatment conditions on properties of vanadium molybdenum oxide catalyst in acrolein oxidation reaction to acrylic acid

International Nuclear Information System (INIS)

Gorshkova, T.P.; Tarasova, D.V.; Olen'kova, I.P.; Andrushkevich, T.V.; Nikoro, T.A.

1984-01-01

The effect of thermal treatment conditions (temperature and gas medium) on properties of vanadium molybdenum oxide catalyst in acrolein oxidation reaction to acrylic acid is investigated. It is shown that active and selective catalysts are formed in the course of thermal decomposition of the drying product of ammonium metavanadate and paramolybdate under the conditions ensuring the vanadium ion reduction up to tetravalent state with conservation of molybdenum oxidation degree equal to 6. It is possible to realize it either by treatment of the catalyst calcinated in the air flow at 300 deg by the reaction mixture at the activation stage or by gas-reducer flow treatment at 280 deg. Thermal treatment in the reducing medium of the oxidized catalyst does not lead to complete regeneration of its properties

Tuning the conductivity of vanadium dioxide films on silicon by swift heavy ion irradiation

Directory of Open Access Journals (Sweden)

H. Hofsäss

2011-09-01

Full Text Available We demonstrate the generation of a persistent conductivity increase in vanadium dioxide thin films grown on single crystal silicon by irradiation with 1 GeV 238U swift heavy ions at room temperature. VO2 undergoes a temperature driven metal-insulator-transition (MIT at 67 °C. After room temperature ion irradiation with high electronic energy loss of 50 keV/nm the conductivity of the films below the transition temperature is strongly increased proportional to the ion fluence of 5·109 U/cm2 and 1·1010 U/cm2. At high temperatures the conductivity decreases slightly. The ion irradiation slightly reduces the MIT temperature. This observed conductivity change is persistent and remains after heating the samples above the transition temperature and subsequent cooling. Low temperature measurements down to 15 K show no further MIT below room temperature. Although the conductivity increase after irradiation at such low fluences is due to single ion track effects, atomic force microscopy (AFM measurements do not show surface hillocks, which are characteristic for ion tracks in other materials. Conductive AFM gives no evidence for conducting ion tracks but rather suggests the existence of conducting regions around poorly conducting ion tracks, possible due to stress generation. Another explanation of the persistent conductivity change could be the ion-induced modification of a high resistivity interface layer formed during film growth between the vanadium dioxide film and the n-Silicon substrate. The swift heavy ions may generate conducting filaments through this layer, thus increasing the effective contact area. Swift heavy ion irradiation can thus be used to tune the conductivity of VO2 films on silicon substrates.

Oxidation of vanadium carbide in air; Oxidacion de carburo de vanadio en aire

Energy Technology Data Exchange (ETDEWEB)

Ruiz, A.; Troiani, L.; Materan, E. [Universidad Simon Bolivar, Depto. de la Ciencia de los Materiales, Grupo de Ingenieria de Superficies e Interfaces, Caracas, Venezuela, (Venezuela)

1998-12-31

It was studied the samples oxidation of vanadium carbide (V{sub 8}C{sub 7}), synterized and in powder, in order to know the temperature influence and the aggregation state in the kinetics and the oxidation products. The assays were realized in static air, at temperature between 600 y 750 Centigrade, between 6 and 24 hours periods. The gaseous products were analyzed through gas chromatography while the condensates ones were analyzed through optical microscopy and scanning electron microscopy, X-ray diffraction and chemical analysis by X-ray fluorescence analysis. It was found that in the V{sub 8}C{sub 7} oxidation occurs two basic processes: the gaseous oxides production which results of the carbon oxidation, fundamentally CO{sub 2}, and the vanadium condensate oxides production, fundamentally V{sub 2}O{sub 5}. In the synterized samples assayed under 650 Centigrade, the kinetics is lineal with loss of mass, suggesting a control by the formation of gaseous products in the sample surface, while in the synterized samples assayed over 650 Centigrade, it occurs a neat gain of mass, which is attributed to vanadium pentoxide fusion. These processes produce stratified layers of V{sub 2}O{sub 5} although at higher temperatures also it was detected V{sub 2}O{sub 4}. The superficial area effect is revealed in what the powder samples always experiment a mass neat increase in all essay temperatures, being the condensate oxidation products, fundamentally V{sub 2}O{sub 5} and V{sub 6}O{sub 13}. (Author)

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Lithium-Vanadium bronzes as model catalysts for the selective reduction of nitric oxide

NARCIS (Netherlands)

Bosch, H.; Bongers, Annemie; Enoch, Gert; Snel, Ruud; Ross, Julian R.H.

1989-01-01

The effect of alkali metals on the selective reduction of nitric oxide with ammonia has been studied on bulk iron oxide and bulk vanadium oxide. The influence of additions of LiOH, NaOH and KOH on the activity was screened by pulse experiments carried out in the absence of gaseous oxygen; FTIR

Roll-to-Roll Processing of Inverted Polymer Solar Cells using Hydrated Vanadium(V)Oxide as a PEDOT:PSS Replacement.

Science.gov (United States)

Espinosa, Nieves; Dam, Henrik Friis; Tanenbaum, David M; Andreasen, Jens W; Jørgensen, Mikkel; Krebs, Frederik C

2011-01-11

The use of hydrated vanadium(V)oxide as a replacement of the commonly employed hole transporting material PEDOT:PSS was explored in this work. Polymer solar cells were prepared by spin coating on glass. Polymer solar cells and modules comprising 16 serially connected cells were prepared using full roll-to-roll (R2R) processing of all layers. The devices were prepared on flexible polyethyleneterphthalate (PET) and had the structure PET/ITO/ZnO/P3HT:PCBM/V₂O₅·(H₂O) n /Ag. The ITO and silver electrodes were processed and patterned by use of screen printing. The zinc oxide, P3HT:PCBM and vanadium(V)oxide layers were processed by slot-die coating. The hydrated vanadium(V)oxide layer was slot-die coated using an isopropanol solution of vanadyl-triisopropoxide (VTIP). Coating experiments were carried out to establish the critical thickness of the hydrated vanadium(V)oxide layer by varying the concentration of the VTIP precursor over two orders of magnitude. Hydrated vanadium(V)oxide layers were characterized by profilometry, scanning electron microscopy, energy dispersive X-ray spectroscopy, and grazing incidence wide angle X-ray scattering. The power conversion efficiency (PCE) for completed modules was up to 0.18%, in contrast to single cells where efficiencies of 0.4% were achieved. Stability tests under indoor and outdoor conditions were accomplished over three weeks on a solar tracker.

Dehydrogenation of Ethylbenzene with Carbon Dioxide as Soft Oxidant over Supported Vanadium-Antimony Oxide Catalyst

Energy Technology Data Exchange (ETDEWEB)

Hong, Do Young; Vislovskiy, Vladislav P.; Yoo, Jin S.; Chang, Jong San [Korea Research Institute of Chemical Technology, Daejeon (Korea, Republic of); Park, Sang Eon [Inha University, Incheon (Korea, Republic of); Park, Min Seok [Mongolia International University, Ulaanbaatar (Mongolia)

2005-11-15

This work presents that carbon dioxide, which is a main contributor to the global warming effect, could be utilized as a selective oxidant in the oxidative dehydrogenation of ethylbenzene. The dehydrogenation of ethylbenzene over alumina-supported vanadium-antimony oxide catalyst has been studied under different atmospheres such as inert nitrogen, steam, oxygen or carbon dioxide as diluent or oxidant. Among them, the addition of carbon dioxide gave the highest styrene yield (up to 82%) and styrene selectivity (up to 97%) along with stable activity. Carbon dioxide could play a beneficial role of a selective oxidant in the improvement of the catalytic behavior through the oxidative pathway.

Synthesis and characterization of alumina-supported vanadium oxide catalysts prepared by the molecular designed dispersion of VO(acac)2 complexes

NARCIS (Netherlands)

Weckhuysen, B.M.; Baltes, M.; Voort, P. van der; Ramachandra Rao, R.; Catana, Gabriela; Schoonheydt, R.A.; Vansant, E.F.

2000-01-01

Alumina-supported vanadium oxide catalysts have been prepared by the molecular designed dispersion method, using the vanadyl acetylacetonate complex (VO(acac)2). The complex has been adsorbed on the support from solution, followed by thermal conversion into the corresponding supported vanadium oxide

Method of forming buried oxide layers in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2000-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Vanadium Bioleaching Behavior by Acidithiobacillus ferrooxidans from a Vanadium-Bearing Shale

Directory of Open Access Journals (Sweden)

Dunpei Wei

2018-01-01

Full Text Available This study investigated bioleaching behavior of vanadium from a vanadium-bearing shale using Acidithiobacillus ferrooxidans (A. ferrooxidans. Results showed a maximum recovery of 62% vanadium in 1.2-day bioleaching, which was 22.45% higher than the controls. Then, the vanadium leaching efficiency decreased significantly, only 24% of that was obtained on the tenth day. The vanadium extraction in 1.2 days was mainly attributed to the dissolution of vanadium in free oxides of shale. Fe3+ produced by A. ferrooxidans promoted the dissolution process. X-ray diffraction (XRD patterns of the leached residues confirmed the generation of jarosite. SEM-EDS analysis of the residues indicated that jarosite adsorbed on the shale and inhibited the further dissolution of vanadium. The relevance of V, Fe, S, O was quite good in the energy disperse X-ray spectrometry (EDS element mapping of jarosite, and acid-washing of the jarosite resulted in 31.6% of the vanadium in the precipitates desorption, indicating that the decrease of vanadium leaching efficiency in bioleaching process was caused by both adsorption and co-precipitation with jarosite.

The active component of vanadium-molybdenum catalysts for the oxidation of acrolein to acrylic acid

International Nuclear Information System (INIS)

Andrushkevich, T.V.; Kuznetsova, T.G.

1986-01-01

The catalytic properties of the vanadium-molybdenum oxide system were investigated in the oxidation of acrolein to acrylic acid. The active component of the catalyst is the compound VMo 3 O 11 , the maximum amount of which is observed at a content of 7-15 mole% V 2 O 4 . The compound VMo 3 O 11 is formed in the thermodecomposition of silicomolybdovanadium heteropoly acids or isopoly compounds, reduced with respect to vanadium, and contains V 4+ and Mo 6+ . The optimum treatment for the formation of this compound is treatment in the reaction mixture at 400 degrees C

The oxidation of organic additives in the positive vanadium electrolyte and its effect on the performance of vanadium redox flow battery

Science.gov (United States)

Nguyen, Tam D.; Whitehead, Adam; Scherer, Günther G.; Wai, Nyunt; Oo, Moe O.; Bhattarai, Arjun; Chandra, Ghimire P.; Xu, Zhichuan J.

2016-12-01

Despite many desirable properties, the vanadium redox flow battery is limited, in the maximum operation temperature that can be continuously endured, before precipitation begins in the positive electrolyte. Many additives have been proposed to improve the thermal stability of the charged positive electrolyte. However, we have found that the apparent stability, revealed in laboratory testing, is often simply an artifact of the test method and arises from the oxidation of the additive, with corresponding partial reduction of V(V) to V(IV). This does not improve the stability of the electrolyte in an operating system. Here, we examined the oxidation of some typical organic additives with carboxyl, alcohol, and multi-functional groups, in sulfuric acid solutions containing V(V). The UV-vis measurements and titration results showed that many compounds reduced the state-of-charge (SOC) of vanadium electrolyte, for example, by 27.8, 88.5, and 81.9% with the addition of 1%wt of EDTA disodium salt, pyrogallol, and ascorbic acid, respectively. The cell cycling also indicated the effect of organic additives on the cell performance, with significant reduction in the usable charge capacity. In addition, a standard screening method for thermally stable additives was introduced, to quickly screen suitable additives for the positive vanadium electrolyte.

Study of propane partial oxidation on vanadium-containing catalysts

Energy Technology Data Exchange (ETDEWEB)

Komashko, G.A.; Khalamejda, S.V.; Zazhigalov, V.A. [AN Ukrainskoj SSR, Kiev (Ukraine). Inst. Fizicheskoj Khimii

1998-12-31

The present results indicate that maximum selectivity to acrylic acid can be reached over V-P-Zr-O catalysts. When the hydrocarbon concentration is 5.1 vol.% the selectivity is about 30% at quite high paraffin conversion. Conclusively, some explanations to the observed facts can be given. The V-P-O catalyst promotion with lanthanum by means of mechanochemical treatment is distinguished by the additive uniform spreading all over the matrix surface. Such twophase system is highly active in propane conversion (lanthanum oxide) and further oxidation of the desired products. The similar properties are attributed to V-P-Bi-La-O catalyst. Bismuth, tellurium and zirconium additives having clearly defined acidic properties provoke the surface acidity strengthening and make easier desorption of the acidic product (acrylic acid) from the surface lowering its further oxidation. Additionally, since bismuth and zirconium are able to form phosphates and, according to, to create space limitations for the paraffin molecule movement out of the active group boundaries, this can be one more support in favour of the selectivity increase. With this point of view very interesting results were obtained. It has been shown that the more limited the size of the vanadium unit, the higher the selectivity is. Monoclinic phase AV{sub 2}P{sub 2}O{sub 10} which consists in clusters of four vanadium atoms is sensibly more reactive than the orthorhombic phase consists in V{sub {infinity}} infinite chains. (orig.)

Mineralogy and geochemistry of vanadium in the Colorado Plateau

Science.gov (United States)

Weeks, A.D.

1961-01-01

The chief domestic source of vanadium is uraniferous sandstone in the Colorado Plateau. Vanadium is 3-, 4-, or 5-valent in nature and, as oxides or combined with other elements, it forms more than 40 minerals in the Plateau ores. These ores have been studied with regard to the relative amounts of vanadium silicates and oxide-vanadates, uranium-vanadium ratios, the progressive oxidation of black low-valent ores to high-valent carnotite-type ores, and theories of origin. ?? 1961.

Importance of Vanadium-Catalyzed Oxidation of SO2to SO3in Two-Stroke Marine Diesel Engines

DEFF Research Database (Denmark)

Colom, Juan M.; Alzueta, María U.; Christensen, Jakob Munkholt

2016-01-01

Low-speed marine diesel engines are mostly operated on heavy fuel oils, which have a high content of sulfur andash, including trace amounts of vanadium, nickel, and aluminum. In particular, vanadium oxides could catalyze in-cylinderoxidation of SO2 to SO3, promoting the formation of sulfuric acid...

Vanadium Electrolyte Studies for the Vanadium Redox Battery-A Review.

Science.gov (United States)

Skyllas-Kazacos, Maria; Cao, Liuyue; Kazacos, Michael; Kausar, Nadeem; Mousa, Asem

2016-07-07

The electrolyte is one of the most important components of the vanadium redox flow battery and its properties will affect cell performance and behavior in addition to the overall battery cost. Vanadium exists in several oxidation states with significantly different half-cell potentials that can produce practical cell voltages. It is thus possible to use the same element in both half-cells and thereby eliminate problems of cross-contamination inherent in all other flow battery chemistries. Electrolyte properties vary with supporting electrolyte composition, state-of-charge, and temperature and this will impact on the characteristics, behavior, and performance of the vanadium battery in practical applications. This Review provides a broad overview of the physical properties and characteristics of the vanadium battery electrolyte under different conditions, together with a description of some of the processing methods that have been developed to produce vanadium electrolytes for vanadium redox flow battery applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrochemical Properties of Graphene-vanadium Oxide Composite Prepared by Electro-deposition for Electrochemical Capacitors

International Nuclear Information System (INIS)

Jeong, Heeyoung; Jeong, Sang Mun

2015-01-01

The nanostructural graphene/vanadium oxide (graphene/V 2 O 5 ) composite with enhanced capacitance was synthesized by the electro-deposition in 0.5 M VOSO 4 solution. The morphology of composites was characterized using scanning electron microscopy (SEM), x-ray diffraction pattern (XRD), and x-ray photoelectron spectroscopy (XPS). The oxidation states of the electro-deposited vanadium oxide was found to be V 5+ and V 4+ . The morphology of the prepared graphene/V 2 O 5 composite exhibits a netlike nano-structure with V 2 O 5 nanorods in about 100 nm diameter, which could lead a better contact between electrolyte an electrode. The composite with a deposition time of 4,000 s exhibits the specific capacitance of 854 mF/cm 2 at a scan rate of 20 mV/s and the capacitance retention of 53% after 1000 CV cycles

Synthesis of vanadium oxide powders by evaporative decomposition of solutions

International Nuclear Information System (INIS)

Lawton, S.A.; Theby, E.A.

1995-01-01

Powders of the vanadium oxides V 2 O 4 , V 6 O 13 , and V 2 O 5 were produced by thermal decomposition of aqueous solutions of vanadyl sulfate hydrate in atmospheres of N 2 , H 2 mixed with N 2 , or air. The composition of the oxide powder was determined by the reactor temperature and gas composition. Residual sulfur concentrations in powders produced by decomposition at 740 C were less than 1 at.%, and these powders consisted of hollow, roughly spherical aggregates of particles less than 1 microm in diameter

Electron spin resonance of vanadium(4)-thallium(1) dithiocarbamate complexes

International Nuclear Information System (INIS)

Ivanov, A.V.; Solozhenkin, P.M.; Baratova, Z.R.; Klyashtornyj, V.B.; Uskov, V.Yu.

1990-01-01

Heteronuclear vanadium(4), thallium(1) dithiocarbanate complexes of the composition TlVO(Dtc) 3 and Tl 2 VO(Dtc) 4 under conditions of magnetic dilution were studied by ESR spectroscopy. Magnetically diluted complexes were prepared by coprecipitation from aqueous solutions of thallium(1) and oxovanadium(2) by solutions of sodium diethyldithiocarbamate, dibutyldithiocarbamate, hexamethylenedithiocarbamate, taken in superstoichiometric excess. Analysis of parameters of ESR spectra of the complexes synthesized shows that thallium atoms are not included in the first coordination sphere of oxovanadium(2), and chelate node VS 4 in thallium(1) complex lattice practically preserves its plane quadratic structure

Topotactic synthesis of vanadium nitride solid foams

International Nuclear Information System (INIS)

Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

1993-01-01

Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

Lithium diffusion in silver vanadium oxide

International Nuclear Information System (INIS)

Takeuchi, E.S.; Thiebolt, W.C. III

1989-01-01

Lithium/silver vanadium oxide (SVO) batteries have been developed to power implantable devices. The voltage of Li/SVO cells decreases with discharge allowing state of charge assessment by accurate determination of the cells' open circuit voltage. The open circuit voltage recovery of Li/SVO cells was monitored during intermittent high rate discharge. It was found that the voltage does not recover at the same rate or magnitude at all depths of discharge. The authors describe lithium diffusion in SVO studied by low scan rate voltammetry where utilization of SVO at various scan rates was used to determine the diffusion rate of lithium. A pulse technique was also used where the rate of lithium diffusion was measured at various depths of discharge

Subsurface oxidation for micropatterning silicon (SOMS).

Science.gov (United States)

Zhang, Feng; Sautter, Ken; Davis, Robert C; Linford, Matthew R

2009-02-03

Here we present a straightforward patterning technique for silicon: subsurface oxidation for micropatterning silicon (SOMS). In this method, a stencil mask is placed above a silicon surface. Radio-frequency plasma oxidation of the substrate creates a pattern of thicker oxide in the exposed regions. Etching with HF or KOH produces very shallow or much higher aspect ratio features on silicon, respectively, where patterning is confirmed by atomic force microscopy, scanning electron microscopy, and optical microscopy. The oxidation process itself is studied under a variety of reaction conditions, including higher and lower oxygen pressures (2 and 0.5 Torr), a variety of powers (50-400 W), different times and as a function of reagent purity (99.5 or 99.994% oxygen). SOMS can be easily executed in any normal chemistry laboratory with a plasma generator. Because of its simplicity, it may have industrial viability.

Thermochemistry of the complex oxides of uranium, vanadium, and alkali metals

International Nuclear Information System (INIS)

Karyakin, N.V.; Chernorukov, N.G.; Suleimanov, E.V.; Kharyushina, E.A.

1992-01-01

The standard enthalpies of the formation at T 298.15 K of complex oxides of uranium(VI), vanadium(V) and alkali metals with the general formula M 1 VUO 6 where M 1 = Na, K, Rb, and Cs, were calculated from the results of calorimetric experiments and from published data. 8 refs., 1 tab

Ion-exchange preparation of high-purity vanadium acid from industrial liquors

International Nuclear Information System (INIS)

Sajdakhmedov, U.A.; Arslanov, Sh.S.; Vulikh, A.I.

1994-01-01

The results of investigations on production of special-purity vanadium acid and vanadium oxide directly from process solutions (technical grade liquors) using ionites are presented. Potentiality of thorough purification of vanadium(5) oxide, when producing vanadium acid on the KU-2 cationite with subsequent purification on anionite, is shown. On the basis of the results obtained a principle flowsheet of ion-exchange production of high-purity vanadium(5) oxide from industrial liquors has been developed. 2 refs.; 1 fig.; 4 tabs

A new oxidimetric reagent: potassium dichromate in a strong phosphoric acid medium-VI Potentiometric titration of vanadium(III) alone and in mixture with vanadium(IV).

Science.gov (United States)

Rao, G G; Rao, P K

1966-09-01

Vanadium(III) can be titrated at room temperature with potassium dichromate in an 8-12M phosphoric acid medium. Two potential breaks are observed in 12M phosphoric add with 0.2N potassium dichromate, the first corresponding to the oxidation of vanadium(III) to vanadium(IV) and the second to the oxidation of vanadium(IV) to vanadium(V). In titrations with 0.05N dichromate only the first break in potential is clearly observed. The method has been extended to the titration of mixtures of vanadium(III) and vanadium(IV). Conditions have also been found for the visual titration of vanadium(III) using ferroln or barium diphenylamine sulphonate as indicator.

Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

International Nuclear Information System (INIS)

Leahu, G. L.; Li Voti, R.; Larciprete, M. C.; Belardini, A.; Mura, F.; Sibilia, C.; Bertolotti, M.; Fratoddi, I.

2013-01-01

We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. We have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures

Oxide film assisted dopant diffusion in silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

2010-10-01

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

Oxide film assisted dopant diffusion in silicon carbide

International Nuclear Information System (INIS)

Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

2010-01-01

A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

Aqueous vanadium ion dynamics relevant to bioinorganic chemistry: A review.

Science.gov (United States)

Kustin, Kenneth

2015-06-01

Aqueous solutions of the four highest vanadium oxidation states exhibit four diverse colors, which only hint at the diverse reactions that these ions can undergo. Cationic vanadium ions form complexes with ligands; anionic vanadium ions form complexes with ligands and self-react to form isopolyanions. All vanadium species undergo oxidation-reduction reactions. With a few exceptions, elucidation of the dynamics of these reactions awaited the development of fast reaction techniques before the kinetics of elementary ligation, condensation, reduction, and oxidation of the aqueous vanadium ions could be investigated. As the biological roles played by endogenous and therapeutic vanadium expand, it is appropriate to bring the results of the diverse kinetics studies under one umbrella. To achieve this goal this review presents a systematic examination of elementary aqueous vanadium ion dynamics. Copyright © 2014 Elsevier Inc. All rights reserved.

Use of porous silicon to minimize oxidation induced stacking fault defects in silicon

International Nuclear Information System (INIS)

Shieh, S.Y.; Evans, J.W.

1992-01-01

This paper presents methods for minimizing stacking fault defects, generated during oxidation of silicon, include damaging the back of the wafer or depositing poly-silicon on the back. In either case a highly defective structure is created and this is capable of gettering either self-interstitials or impurities which promote nucleation of stacking fault defects. A novel method of minimizing these defects is to form a patch of porous silicon on the back of the wafer by electrochemical etching. Annealing under inert gas prior to oxidation may then result in the necessary gettering. Experiments were carried out in which wafers were subjected to this treatment. Subsequent to oxidation, the wafers were etched to remove oxide and reveal defects. The regions of the wafer adjacent to the porous silicon patch were defect-free, whereas remote regions had defects. Deep level transient spectroscopy has been used to examine the gettering capability of porous silicon, and the paper discusses the mechanism by which the porous silicon getters

Vanadium induces dopaminergic neurotoxicity via protein kinase Cdelta dependent oxidative signaling mechanisms: Relevance to etiopathogenesis of Parkinson's disease

International Nuclear Information System (INIS)

Afeseh Ngwa, Hilary; Kanthasamy, Arthi; Anantharam, Vellareddy; Song, Chunjuan; Witte, Travis; Houk, Robert; Kanthasamy, Anumantha G.

2009-01-01

Environmental exposure to neurotoxic metals through various sources including exposure to welding fumes has been linked to an increased incidence of Parkinson's disease (PD). Welding fumes contain many different metals including vanadium typically present as particulates containing vanadium pentoxide (V 2 O 5 ). However, possible neurotoxic effects of this metal oxide on dopaminergic neuronal cells are not well studied. In the present study, we characterized vanadium-induced oxidative stress-dependent cellular events in cell culture models of PD. V 2 O 5 was neurotoxic to dopaminergic neuronal cells including primary nigral dopaminergic neurons and the EC 50 was determined to be 37 μM in N27 dopaminergic neuronal cell model. The neurotoxic effect was accompanied by a time-dependent uptake of vanadium and upregulation of metal transporter proteins Tf and DMT1 in N27 cells. Additionally, vanadium resulted in a threefold increase in reactive oxygen species generation, followed by release of mitochondrial cytochrome c into cytoplasm and subsequent activation of caspase-9 (> fourfold) and caspase-3 (> ninefold). Interestingly, vanadium exposure induced proteolytic cleavage of native protein kinase Cdelta (PKCδ, 72-74 kDa) to yield a 41 kDa catalytically active fragment resulting in a persistent increase in PKCδ kinase activity. Co-treatment with pan-caspase inhibitor Z-VAD-FMK significantly blocked vanadium-induced PKCδ proteolytic activation, indicating that caspases mediate PKCδ cleavage. Also, co-treatment with Z-VAD-FMK almost completely inhibited V 2 O 5 -induced DNA fragmentation. Furthermore, PKCδ knockdown using siRNA protected N27 cells from V 2 O 5 -induced apoptotic cell death. Collectively, these results demonstrate that vanadium can exert neurotoxic effects in dopaminergic neuronal cells via caspase-3-dependent PKCδ cleavage, suggesting that metal exposure may promote nigral dopaminergic degeneration.

Vanadium oxide (VO) based low cost counter electrode in dye sensitized solar cell (DSSC) applications

Energy Technology Data Exchange (ETDEWEB)

Vijayakumar, P.; Pandian, Muthu Senthil; Ramasamy, P., E-mail: ramasamyp@ssn.edu.in [SSN Research Centre, SSN College of Engineering, Kalavakkam-603 110, Chennai, Tamilnadu (India)

2015-06-24

Vanadium oxide nanostars were synthesized by chemical method. The prepared Vanadium oxide nanostars are introduced into dye sensitized solar cell (DSSC) as counter electrode (CE) catalyst to replace the expensive platinum (Pt). The products were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and Brunauer–Emmett–Teller (BET) method. The photovoltaic performance of the VO as counter electrode based DSSC was evaluated under simulated standard global AM 1.5G sunlight (100 mW/cm{sup 2}). The solar to electrical energy conversion efficiency (η) of the DSSC was found to be 0.38%.This work expands the Counter electrode catalyst, which can help to reduce the cost of DSSC and thereby encourage their fundamental research and commercial application.

Simulation of atomistic processes during silicon oxidation

OpenAIRE

Bongiorno, Angelo

2003-01-01

Silicon dioxide (SiO2) films grown on silicon monocrystal (Si) substrates form the gate oxides in current Si-based microelectronics devices. The understanding at the atomic scale of both the silicon oxidation process and the properties of the Si(100)-SiO2 interface is of significant importance in state-of-the-art silicon microelectronics manufacturing. These two topics are intimately coupled and are both addressed in this theoretical investigation mainly through first-principles calculations....

Color and vanadium valency in V-doped ZrO2

International Nuclear Information System (INIS)

Ren, Feng; Ishida, Shingo; Takeuchi, Nobuyuki

1993-01-01

The distribution and chemical states of vanadium in V-doped ZrO 2 were studied to clarify the origin of the color of vanadium-zirconium yellow pigment in comparison with vanadium-tin yellow pigment. ESCA data and measurements of lattice constants of V-doped ZrO 2 revealed that vanadium was dissolved mainly as V 4+ substituting for Zr in ZrO 2 lattice, and its solubility limit was 0.5 wt% as V 2 O 5 . It was found that the yellow color of vanadium-zirconium yellow was produced predominantly by the dissolved vanadium and that the contribution of vanadium oxide on ZrO 2 grains to the yellow color was about 1.30 of that of the dissolved vanadium when compared on the basis of equimolar quantity of vanadium. Most of the undissolved vanadium oxide was in an amorphous or a poorly crystallized state

Pepspectives of chlorine application in metallurgy of vanadium

International Nuclear Information System (INIS)

Korshunov, B.G.; Kutsenko, S.A.

1983-01-01

The most expedient variants of reprocessing of vanadium technical oxide (5), ferrovanadium and converter slags by chlorine technology with production of pure metal are considered. It is shown that production of vanadium by the way of electro- or metallothermal reduction of chlorides provides more plastic metal in comparison with reduction from oxides. The methods of production of VOCl 3 , VCl 4 and vanadium lowest chlorides are considered. Necessity of expansion of production of vanadium chlorine derivatives is dictated as well by their increasing application in different areas of national economy, in particular, as catalysts in organic synthesis

Experimental and theoretical study of the reactions between neutral vanadium oxide clusters and ethane, ethylene, and acetylene.

Science.gov (United States)

Dong, Feng; Heinbuch, Scott; Xie, Yan; Rocca, Jorge J; Bernstein, Elliot R; Wang, Zhe-Chen; Deng, Ke; He, Sheng-Gui

2008-02-13

Reactions of neutral vanadium oxide clusters with small hydrocarbons, namely C2H6, C2H4, and C2H2, are investigated by experiment and density functional theory (DFT) calculations. Single photon ionization through extreme ultraviolet (EUV, 46.9 nm, 26.5 eV) and vacuum ultraviolet (VUV, 118 nm, 10.5 eV) lasers is used to detect neutral cluster distributions and reaction products. The most stable vanadium oxide clusters VO2, V2O5, V3O7, V4O10, etc. tend to associate with C2H4 generating products V(m)O(n)C2H4. Oxygen-rich clusters VO3(V2O5)(n=0,1,2...), (e.g., VO3, V3O8, and V5O13) react with C2H4 molecules to cause a cleavage of the C=C bond of C2H4 to produce (V2O5)(n)VO2CH2 clusters. For the reactions of vanadium oxide clusters (V(m)O(n)) with C2H2 molecules, V(m)O(n)C2H2 are assigned as the major products of the association reactions. Additionally, a dehydration reaction for VO3 + C2H2 to produce VO2C2 is also identified. C2H6 molecules are quite stable toward reaction with neutral vanadium oxide clusters. Density functional theory calculations are employed to investigate association reactions for V2O5 + C2H(x). The observed relative reactivity of C2 hydrocarbons toward neutral vanadium oxide clusters is well interpreted by using the DFT calculated binding energies. DFT calculations of the pathways for VO3+C2H4 and VO3+C2H2 reaction systems indicate that the reactions VO3+C2H4 --> VO2CH2 + H2CO and VO3+C2H2 --> VO2C2 + H2O are thermodynamically favorable and overall barrierless at room temperature, in good agreement with the experimental observations.

Compositional analysis of silicon oxide/silicon nitride thin films

Directory of Open Access Journals (Sweden)

Meziani Samir

2016-06-01

Full Text Available Hydrogen, amorphous silicon nitride (SiNx:H abbreviated SiNx films were grown on multicrystalline silicon (mc-Si substrate by plasma enhanced chemical vapour deposition (PECVD in parallel configuration using NH3/SiH4 gas mixtures. The mc-Si wafers were taken from the same column of Si cast ingot. After the deposition process, the layers were oxidized (thermal oxidation in dry oxygen ambient environment at 950 °C to get oxide/nitride (ON structure. Secondary ion mass spectroscopy (SIMS, Rutherford backscattering spectroscopy (RBS, Auger electron spectroscopy (AES and energy dispersive X-ray analysis (EDX were employed for analyzing quantitatively the chemical composition and stoichiometry in the oxide-nitride stacked films. The effect of annealing temperature on the chemical composition of ON structure has been investigated. Some species, O, N, Si were redistributed in this structure during the thermal oxidation of SiNx. Indeed, oxygen diffused to the nitride layer into Si2O2N during dry oxidation.

Determination of trace vanadium using its catalytic effect on the oxidation of gallic acid by bromate

International Nuclear Information System (INIS)

Yamane, Takeshi; Fukasawa, Tsutomu

1976-01-01

The oxidation of gallic acid by bromate with trace vanadium as catalyst was followed spectrophotometrically by measurements of absorbance change at 420 nm. The reaction rate was obtained graphically from the absorbance vs. time curve in the range of about 15 to 40 min. reaction time. The reaction rate was proportional to the concentration of vanadium(V) in the range 0--120 ng (under the conditions of 5.3x10 -3 M gallic acid, 6.0x10 -3 M potassium bromate, pH 3.8) and 0--30 ng (1.1x10 -2 M gallic acid, 2.7x10 -2 M potassium bromate, pH 3.8). Using this relationship, the concentration of vanadium as low as 0.1 ng/ml can be determined. The relative standard deviations at 50 ng and 20 ng of vanadium were 3.5% (n=14) and 4.0% (n=10), respectively. Iron(III) interfered seriously even when present in 20 times the amounts of vanadium. Up to 60 times, W(VI), Mo(VI) and iodide did not interfere. Many of the other ions examined were found to have no effect or slight effect even when present in 1000 times the amounts of vanadium. Other factors affecting the reaction rate were also studied. (auth.)

Preparation and characterization of vanadium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Monfort, O.; Plesch, G. [Comenius University of Bratislava, Faculty of Natural Sciences, Department of Inorganic Chemistry, 84215 Bratislava (Slovakia); Roch, T. [Comenius University of Bratislava, Faculty of Mathematics Physics and Informatics, Department of Experimental Physics, 84248 Bratislava (Slovakia)

2013-04-16

The thermotropic VO{sub 2} films have many applications, since they exhibit semiconductor-conductor switching properties at temperature around 70 grad C. Vanadium oxide thin films were prepared via sol-gel method. Spin coater was used to depose these films on Si/SiO{sub 2} and lime glass substrates. Thin films of V{sub 2}O{sub 5} can be reduced to metastable VO{sub 2} thin films at the temperature of 450 grad C under the pressure of 10{sup -2} Pa. These films are then converted to thermotropic VO{sub 2} at 700 grad C in argon under normal pressure. (authors)

Graphite furnace atomic absorption spectrometric determination of vanadium after cloud point extraction in the presence of graphene oxide

Science.gov (United States)

López-García, Ignacio; Marín-Hernández, Juan José; Hernández-Córdoba, Manuel

2018-05-01

Vanadium (V) and vanadium (IV) in the presence of a small concentration of graphene oxide (0.05 mg mL-1) are quantitatively transferred to the coacervate obtained with Triton X-114 in a cloud point microextraction process. The surfactant-rich phase is directly injected into the graphite atomizer of an atomic absorption spectrometer. Using a 10-mL aliquot sample and 150 μL of a 15% Triton X-114 solution, the enrichment factor for the analyte is 103, which results in a detection limit of 0.02 μg L-1 vanadium. The separation of V(V) and V(IV) using an ion-exchanger allows speciation of the element at low concentrations. Data for seven reference water samples with certified vanadium contents confirm the reliability of the procedure. Several beer samples are also analyzed, those supplied as canned drinks showing low levels of tetravalent vanadium.

Determination of vanadium

International Nuclear Information System (INIS)

Stepin, V.V.; Kurbatova, V.I.; Fedorova, N.D.

1980-01-01

Titrimetric and potentiometric methods of vanadium determination in ferrovanadium are developed. The essence of the titrimetric method using phenylanthranilic acid as indicator is in the following. Ferrovanadium weighed amount is dissolved in H 2 SO 4 , vanadium is oxidated by potassium permanganate to V(5) and is titrated by a solution of double salt of sulfuric Fe(2) and ammonium in the presence of indicator. Potentiometric titration is carried out using the same indicator [ru

Graphite-graphite oxide composite electrode for vanadium redox flow battery

International Nuclear Information System (INIS)

Li Wenyue; Liu Jianguo; Yan Chuanwei

2011-01-01

Highlights: → A new composite electrode is designed for vanadium redox flow battery (VRB). → The graphite oxide (GO) is used as electrode reactions catalyst. → The excellent electrode activity is attributed to the oxygen-containing groups attached on the GO surface. → A catalytic mechanism of the GO towards the redox reactions is presumed. - Abstract: A graphite/graphite oxide (GO) composite electrode for vanadium redox battery (VRB) was prepared successfully in this paper. The materials were characterized with X-ray diffraction, X-ray photoelectron spectroscopy and scanning electron microscopy. The specific surface area was measured by the Brunauer-Emmett-Teller method. The redox reactions of [VO 2 ] + /[VO] 2+ and V 3+ /V 2+ were studied with cyclic voltammetry and electrochemical impedance spectroscopy. The results indicated that the electrochemical performances of the electrode were improved greatly when 3 wt% GO was added into graphite electrode. The redox peak currents of [VO 2 ] + /[VO] 2+ and V 3+ /V 2+ couples on the composite electrode were increased nearly twice as large as that on the graphite electrode, and the charge transfer resistances of the redox pairs on the composite electrode are also reduced. The enhanced electrochemical activity could be ascribed to the presence of plentiful oxygen functional groups on the basal planes and sheet edges of the GO and large specific surface areas introduced by the GO.

Pore-Size-Tuned Graphene Oxide Frameworks as Ion-Selective and Protective Layers on Hydrocarbon Membranes for Vanadium Redox-Flow Batteries.

Science.gov (United States)

Kim, Soohyun; Choi, Junghoon; Choi, Chanyong; Heo, Jiyun; Kim, Dae Woo; Lee, Jang Yong; Hong, Young Taik; Jung, Hee-Tae; Kim, Hee-Tak

2018-05-07

The laminated structure of graphene oxide (GO) membranes provides exceptional ion-separation properties due to the regular interlayer spacing ( d) between laminate layers. However, a larger effective pore size of the laminate immersed in water (∼11.1 Å) than the hydrated diameter of vanadium ions (>6.0 Å) prevents its use in vanadium redox-flow batteries (VRFB). In this work, we report an ion-selective graphene oxide framework (GOF) with a d tuned by cross-linking the GO nanosheets. Its effective pore size (∼5.9 Å) excludes vanadium ions by size but allows proton conduction. The GOF membrane is employed as a protective layer to address the poor chemical stability of sulfonated poly(arylene ether sulfone) (SPAES) membranes against VO 2 + in VRFB. By effectively blocking vanadium ions, the GOF/SPAES membrane exhibits vanadium-ion permeability 4.2 times lower and a durability 5 times longer than that of the pristine SPAES membrane. Moreover, the VRFB with the GOF/SPAES membrane achieves an energy efficiency of 89% at 80 mA cm -2 and a capacity retention of 88% even after 400 cycles, far exceeding results for Nafion 115 and demonstrating its practical applicability for VRFB.

Hydrothermal deposition and characterization of silicon oxide nanospheres

International Nuclear Information System (INIS)

Pei, L.Z.

2008-01-01

Silicon oxide nanospheres with the average diameter of about 100 nm have been synthesized by hydrothermal deposition process using silicon and silica as the starting materials. The silicon oxide nanospheres were characterized by field emission scanning electron microscopy (FESEM), energy dispersive X-ray spectrum (EDS), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) spectrum, respectively. The results show that large scale silicon oxide nanospheres with the uniform size are composed of Si and O showing the amorphous structure. Strong PL peak at 435 nm is observed demonstrating the good blue light emission property

Oxidative dehydration of glycerol to acrylic acid over vanadium-impregnated zeolite beta

Energy Technology Data Exchange (ETDEWEB)

Pestana, Carolina F.M.; Guerra, Antonio C.O.; Turci, Cassia C. [Universidade Federal do Rio de Janeiro, RJ (Brazil). Inst. de Quimica; Ferreira, Glaucio B. [Universidade Federal Fluminense, Niteroi, RJ (Brazil). Inst. de Quimica; Mota, Claudio J.A., E-mail: cmota@iq.ufrj.br [INCT Energia e Ambiente, Universidade Federal do Rio de Janeiro, RJ (Brazil)

2013-01-15

The oxidative dehydration of glycerol to acrylic acid was studied over vanadium-impregnated zeolite Beta. Catalysts were prepared by wet impregnation of ammonium metavanadate over ammonium-exchanged zeolite Beta, followed by air calcination at 823 K. Impregnation reduced the specific surface area, but did not significantly affected the acidity (Bronsted and Lewis) of the zeolites. The catalytic evaluation was carried out in a fixed bed flow reactor using air as the carrier and injecting glycerol by means of a syringe pump. Acrolein was the main product, with acetaldehyde and hydroxy-acetone (acetol) being also formed. Acrylic acid was formed with approximately 25% selectivity at 548 K over the impregnated zeolites. The result can be explained by XPS (X-ray photoelectron spectroscopy) measurements, which indicated a good dispersion of the vanadium inside the pores. (author)

Oxidative dehydration of glycerol to acrylic acid over vanadium-impregnated zeolite beta

International Nuclear Information System (INIS)

Pestana, Carolina F.M.; Guerra, Antonio C.O.; Turci, Cassia C.

2013-01-01

The oxidative dehydration of glycerol to acrylic acid was studied over vanadium-impregnated zeolite Beta. Catalysts were prepared by wet impregnation of ammonium metavanadate over ammonium-exchanged zeolite Beta, followed by air calcination at 823 K. Impregnation reduced the specific surface area, but did not significantly affected the acidity (Bronsted and Lewis) of the zeolites. The catalytic evaluation was carried out in a fixed bed flow reactor using air as the carrier and injecting glycerol by means of a syringe pump. Acrolein was the main product, with acetaldehyde and hydroxy-acetone (acetol) being also formed. Acrylic acid was formed with approximately 25% selectivity at 548 K over the impregnated zeolites. The result can be explained by XPS (X-ray photoelectron spectroscopy) measurements, which indicated a good dispersion of the vanadium inside the pores. (author)

A novel process for recovery of iron, titanium, and vanadium from titanomagnetite concentrates: NaOH molten salt roasting and water leaching processes

International Nuclear Information System (INIS)

Chen, Desheng; Zhao, Longsheng; Liu, Yahui; Qi, Tao; Wang, Jianchong; Wang, Lina

2013-01-01

Highlights: ► The conversion of titanium is 96.6% in the rich titanium–vanadium slag. ► MgTi 2 O 5 and M 3 O 5 (M = Ti, Mg, Fe) were converted to Na 2 TiO 3 and NaMO 2 , respectively. ► Na 2 TiO 3 is converted to undefined structure of H 2 TiO 3 . ► NaMO 2 is converted to α-NaFeO 2 -type structure of HMO 2 . ► 87.3% of sodium, 42.3% of silicon, 43.2% of aluminum, 22.8% of manganese and 96.6% of vanadium were leached out. -- Abstract: A novel process for recovering iron, titanium, and vanadium from titanomagnetite concentrates has been developed. In the present paper, the treatment of rich titanium–vanadium slag by NaOH molten salt roasting and water leaching processes is investigated. In the NaOH molten salt roasting process, the metallic iron is oxidized into ferriferous oxide, MgTi 2 O 5 is converted to NaCl-type structure of Na 2 TiO 3 , and M 3 O 5 (M = Ti, Mg, Fe) is converted to α-NaFeO 2 -type structure of NaMO 2 , respectively. Roasting temperature and NaOH–slag mass ratio played a considerable role in the conversion of titanium in the rich titanium–vanadium slag during the NaOH molten salt roasting process. Roasting at 500 °C for 60 min and a 1:1 NaOH–slag mass ratio produces 96.3% titanium conversion. In the water leaching process, the Na + was exchanged with H + , Na 2 TiO 3 is converted to undefined structure of H 2 TiO 3 , and NaMO 2 is converted to α-NaFeO 2 -type structure of HMO 2 . Under the optimal conditions, 87.3% of the sodium, 42.3% of the silicon, 43.2% of the aluminum, 22.8% of the manganese, and 96.6% of the vanadium are leached out

Kinetic investigation of vanadium (V)/(IV) redox couple on electrochemically oxidized graphite electrodes

International Nuclear Information System (INIS)

Wang, Wenjun; Wei, Zengfu; Su, Wei; Fan, Xinzhuang; Liu, Jianguo; Yan, Chuanwei; Zeng, Chaoliu

2016-01-01

Highlights: • The VO_2"+/VO"2"+ redox reaction of the electrode could be facilitated to some extent with the increasing anodic corrosion. • A real reaction kinetic equation for the oxidation of VO"2"+ on the electrochemically oxidized electrode has been firstly obtained. • The establishment of the kinetic equation is conducive to predict polarization behaviors of the electrodes in engineering application. - Abstract: The morphology, surface composition, wettability and the kinetic parameters of the electrochemically oxidized graphite electrodes obtained under different anodic polarization conditions have been examined by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), contact angle measurements, steady-state polarization and cyclic voltammetry (CV) tests, with an attempt to investigate the inherent correlation between the physicochemical properties and the kinetic characteristics for carbon electrodes used in an all-vanadium redox flow battery (VRFB). When the anodic polarization potential raises up to 1.8 V vs. SCE, the anodic corrosion of the graphite might happen and a large number of oxygen-containing functional groups generate. The VO_2"+/VO"2"+ redox reaction can be facilitated and the reaction reversibility tends to become better with the increasing anodic potential, possibly owing to the increased surface oxides and the resulting improved wettability of the electrode. Based on this, a real reaction kinetic equation for the oxidation of VO"2"+ has been obtained on the electrode polarized at 1.8 V vs. SCE and it can be also well used to predict the polarization behavior of the oxidized electrode in vanadium (IV) acidic solutions.

Roasting and leaching behaviors of vanadium and chromium in calcification roasting-acid leaching of high-chromium vanadium slag

Science.gov (United States)

Wen, Jing; Jiang, Tao; Zhou, Mi; Gao, Hui-yang; Liu, Jia-yi; Xue, Xiang-xin

2018-05-01

Calcification roasting-acid leaching of high-chromium vanadium slag (HCVS) was conducted to elucidate the roasting and leaching behaviors of vanadium and chromium. The effects of the purity of CaO, molar ratio between CaO and V2O5 ( n(CaO)/ n(V2O5)), roasting temperature, holding time, and the heating rate used in the oxidation-calcification processes were investigated. The roasting process and mechanism were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and thermogravimetry-differential scanning calorimetry (TG-DSC). The results show that most of vanadium reacted with CaO to generate calcium vanadates and transferred into the leaching liquid, whereas almost all of the chromium remained in the leaching residue in the form of (Fe0.6Cr0.4)2O3. Variation trends of the vanadium and chromium leaching ratios were always opposite because of the competitive reactions of oxidation and calcification between vanadium and chromium with CaO. Moreover, CaO was more likely to combine with vanadium, as further confirmed by thermodynamic analysis. When the HCVS with CaO added in an n(CaO)/ n(V2O5) ratio of 0.5 was roasted in an air atmosphere at a heating rate of 10°C/min from room temperature to 950°C and maintained at this temperature for 60 min, the leaching ratios of vanadium and chromium reached 91.14% and 0.49%, respectively; thus, efficient extraction of vanadium from HCVS was achieved and the leaching residue could be used as a new raw material for the extraction of chromium. Furthermore, the oxidation and calcification reactions of the spinel phases occurred at 592 and 630°C for n(CaO)/ n(V2O5) ratios of 0.5 and 5, respectively.

Kinetics and mechanism of oxidation of acetanilide by quinquevalent vanadium in acid medium

International Nuclear Information System (INIS)

Gupta, R.

1990-01-01

The kinetics of the oxidation of acetanilide with vanadium(V) in sulphuric acid medium at constant ionic strength has been studied. The reaction is first order with oxidant. The order of reaction in acetanilide varies from one to zero. The reaction follows an acid catalyzed independent path, exhibiting square dependence in H + . A Bunnett plot indicates that the water acts as a nucleophile. The thermodynamic parameters have been computed. A probable reaction mechanism and rate law consistent with these data are given. (Author)

The structural studies of vanadium substituted lithium-bismuth-boro-tellurite glass

Science.gov (United States)

Madhu, A.; Eraiah, B.

2018-05-01

The structural studies of vanadium substituted lithium-bismuth-boro-tellurite glass is successfully prepared and certain analysis like XRD,FTIR,DTA/TGA with density, molar volume are done. The amorphous phase has been identified based on X-ray diffraction analysis. The vanadium oxide plays the role as a glass-modifier and influences on BO3 ↔ BO4 conversion. The observed nonlinear variation in Tg with vanadium oxide increase, it reflects structural changes. The nonlinear variation of density and molar volume can be attributed to vanadium oxide incorporation have increased the number of Non-bridging oxygen (NBO'S).

Hysteresis Phenomena in Sulfur Dioxide Oxidation over Supported Vanadium Catalysts

DEFF Research Database (Denmark)

Masters, Stephen G.; Eriksen, Kim Michael; Fehrmann, Rasmus

1997-01-01

Catalyst deactivation and hysteresis behavior in industrial SO2-oxidation catalysts have been studied in the temperature region 350-480 C by combined in situ EPR spectroscopy and catalytic activity measurements. The feed gas composition simulated sulfuric acid synthesis gas and wet/dry de......NOx'ed flue gas. The vanadium (IV) compound K4(VO)3(SO4)5 precipitated during all the investigated conditions hence causing catalyst deactivation. Hysteresis behavior of both the catalytic activity and the V(IV) content was observed during reheating....

The fabrication and visible-near-infrared optical modulation of vanadium dioxide/silicon dioxide composite photonic crystal structure

Science.gov (United States)

Liang, Jiran; Li, Peng; Song, Xiaolong; Zhou, Liwei

2017-12-01

We demonstrated a visible and near-infrared light tunable photonic nanostructure, which is composed of vanadium dioxide (VO2) thin film and silicon dioxide (SiO2) ordered nanosphere arrays. The vanadium films were sputtered on two-dimensional (2D) SiO2 sphere arrays. VO2 thin films were prepared by rapid thermal annealing (RTA) method with different oxygen flow rates. The close-packed VO2 shell formed a continuous surface, the composition of VO2 films in the structure changed when the oxygen flow rates increased. The 2D VO2/SiO2 composite photonic crystal structure exhibited transmittance trough tunability and near-infrared (NIR) transmittance modulation. When the oxygen flow rate increased from 3 slpm to 4 slpm, the largest transmittance trough can be regulated from 904 to 929 nm at low temperature, the transmittance troughs also appear blue shift when the VO2 phase changes from insulator to metal. The composite nanostructure based on VO2 films showed visible transmittance tunability, which would provide insights into the glass color changing in smart windows.

Influence of phosphorus and potassium impurities on the properties of vanadium oxide supported on TiO2

NARCIS (Netherlands)

van Hengstum, A.J.; Pranger, J.; van Ommen, J.G.; Gellings, P.J.

1984-01-01

The catalytic properties of vanadium oxide catalysts supported on TiO2 from Tioxide were strongly affected by phosphorus and potassium, present as impurities in the TiO2 support. The effects observed were stronaly dependent on the type of hydrocarbon oxidised. In the oxidation of toluene to benzoic

Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

International Nuclear Information System (INIS)

Díaz-Becerril, T.; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A.; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

2017-01-01

Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta 2 O 5 and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta 2 O 5- SiO 2 -Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si + and Ta + states respectively. Ta 2 O 5 and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta 2 O 5 /Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

Study of vanadium based mesoporous silicas for oxidative dehydrogenation of propane and n-butane

Czech Academy of Sciences Publication Activity Database

Bulánek, R.; Kalužová, A.; Setnička, M.; Zukal, Arnošt; Čičmanec, P.; Mayerová, Jana

2012-01-01

Roč. 179, č. 1 (2012), s. 149-158 ISSN 0920-5861 R&D Projects: GA ČR GAP106/10/0196 Institutional research plan: CEZ:AV0Z40400503 Keywords : vanadium * oxidative dehydrogenation * mesoporous silicas Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.980, year: 2012

Structure-property relationships in NO_x sensor materials composed of arrays of vanadium oxide nanoclusters

Energy Technology Data Exchange (ETDEWEB)

Putrevu, Naga Ravikanth; Darling, Seth B.; Segre, Carlo U.; Ganegoda, Hasitha; Khan, M. Ishaque

2017-10-04

The mixed-valent vanadium oxide based three-dimensional framework structure species [Cd₃(H₂O)₁₂V₁₆^IVV₂^VO₃₆(OH)₆(AO₄)]∙24H₂O, (A=V,S) (Cd₃(VO)_o) represents a rare example of an interesting sensor material which exhibits NO_x {NO+NO₂} semiconducting gas sensor properties under ambient conditions. The electrical resistance of the sensor material Cd₃(VO)_o decreases in air. Combined characterization studies revealed that the building block, {V₁₈O₄₂(AO₄)} cluster, of 3-D framework undergoes oxidation and remains intact for at least 2 months. The decrease in resistance is attributable to the reactivity of molecular oxygen towards vanadium which results in an increase in the oxidation state as well as the coordination number of vanadium center and decrease in band gap of Cd₃(VO)_o. Based on these results we propose that the changes in semiconducting properties of Cd₃(VO)_o under ambient conditions are due to the greater overlap between the O 2p and V 3d orbitals occurring during the oxidation.

Heteronuclear Long-Range Correlation

DEFF Research Database (Denmark)

Sørensen, Ole W.

The lecture will cover heteronuclear long-range correlation techniques like HMBC, H2BC, and HAT HMBC with the emphasis on determining the number of covalent bonds between two spins being correlated. H2BC and HMBC spectra are quite complementary as a peak can be strong in one of the two spectra...

Physicochemical properties of vanadium impregnated Al-PILCs: Effect of vanadium source

Energy Technology Data Exchange (ETDEWEB)

Balci, Suna, E-mail: sunabalci@gazi.edu.tr; Tecimer, Aylin

2015-03-01

Graphical abstract: - Highlights: • Vanadium was incorporated into Al-PILC using NaVO{sub 3} or VOSO{sub 4}·3H{sub 2}O precursors by wet impregnation, washing after wet impregnation and impregnation from solution methods. • The layered structure of the supports was retained after the vanadium incorporation. • Incorporation took place both by settling and ion exchange mechanism with the treatment VOSO{sub 4}·3H{sub 2}O precursor while settling was dominant in the use of NaVO{sub 3} precursor. • Treatment with VOSO{sub 4}·3H{sub 2}O which was acidic in solution resulted in more structural deformation. • V{sub 2}O{sub 5} and VO{sub 2} were found as the major oxide forms on the impregnated samples. Loading of vanadyl sulfate hydrate (VOSO{sub 4}·H{sub 2}O) resulted in higher V/Si ratio. Most of the vanadium was bonded in +5 oxide form. • Changes in the FTIR signals after vanadium incorporation caused by Brønsted and Lewis sites, silanol, water and vanadium vibrations were occured. • Dehydroxylation of the structure took place around 300 °C. Samples obtained by impregnation and washing after wet impregnation methods resulted in similar mass losses and the wet impregnated sample showed the highest mass loss among the impregnated samples. - Summary: Clay from the Middle Anatolian previously pillared by Al{sub 13}-Keggin ions and then calcined at 300 °C (Al-PILC) was impregnated with aqueous solutions of vanadium precursors by impregnation from solution (I), wet impregnation (WI) and washing after wet impregnation (WWI) methods. The crystal and textural properties were evaluated by X-ray powder diffraction (XRD), nitrogen sorption and transmission electron microscopy (TEM) images. Vanadium incorporation into the Al-PILC resulted decreases in the basal spacing from 1.75 nm to 1.35 nm with the preserved typical layered structure. The use of sodium metavanadate (NaVO{sub 3}) as the source and the impregnation from solution as the incorporation method

Effects of Vanadium Ions in Different Oxidation States on Myosin ATPase Extracted from the Solitary Ascidian, Halocynthia roretzi (Drasche) : Biochemistry

OpenAIRE

HITOSHI, MICHIBATA; YUTAKA, ZENKO; KENJI, YAMADA; MASATO, HASEGAWA; TATSURO, TERADA; TAKAHARU, NUMAKUANI; Biological Institute, Faculty of Science, Toyama University; Biological Institute, Faculty of Science, Toyama University; Biological Institute, Faculty of Science, Toyama University; Biological Institute, Faculty of Science, Toyama University; Department of Chemistry, Toyama College of Technology; Marine Biological Station, Tohoku University

1989-01-01

Some ascidians are known to accumulate vanadium ion within their tissues by 10^6-fold as that in sea water and store the metal ion in its reduced tetravalent and/or trivalent states. It is also well known that phosphoenzymes are inhibited by pentavalent vanadium ion over a range of 10nM to 1mM. In the present experiment we have therefore examined the effects of vanadium ions in different oxidation states on the activity of myosin ATPase extracted from the mantle of the ascidian, Halocynthia r...

Catalytic oxidation of silicon by cesium ion bombardment

International Nuclear Information System (INIS)

Souzis, A.E.; Huang, H.; Carr, W.E.; Seidl, M.

1991-01-01

Results for room-temperature oxidation of silicon using cesium ion bombardment and low oxygen exposure are presented. Bombardment with cesium ions is shown to allow oxidation at O 2 pressures orders of magnitude smaller than with noble gas ion bombardment. Oxide layers of up to 30 A in thickness are grown with beam energies ranging from 20--2000 eV, O 2 pressures from 10 -9 to 10 -6 Torr, and total O 2 exposures of 10 0 to 10 4 L. Results are shown to be consistent with models indicating that initial oxidation of silicon is via dissociative chemisorption of O 2 , and that the low work function of the cesium- and oxygen-coated silicon plays the primary role in promoting the oxidation process

Characterization and Electrical Response to Humidity of Sintered Polymeric Electrospun Fibers of Vanadium Oxide-({TiO}_{{2}} /{WO}_{{3}} )

Science.gov (United States)

Araújo, E. S.; Libardi, J.; Faia, P. M.; de Oliveira, H. P.

2018-02-01

Metal oxide composites have attracted much consideration due to their promising applications in humidity sensors in response to the physical and chemical property modifications of the resulting materials. This work focused on the preparation, microstructural characterization and analysis of humidity-dependent electrical properties of undoped and vanadium oxide (V2O5)-doped titanium oxide/tungsten oxide (TiO2/WO3) sintered ceramic films obtained by electrospinning. The electrical properties were investigated by impedance spectroscopy (400 Hz-40 MHz) as a function of relative humidity (RH). The results revealed a typical transition in the transport mechanisms controlled by the appropriated doping level of V2O5, which introduces important advantages to RH detection due to the atomic substitution of titanium by vanadium atoms in highly doped structures. These aspects are directly related to the microstructure modification and structure fabrication procedure.

Structural and photoluminescent properties of a composite tantalum oxide and silicon nanocrystals embedded in a silicon oxide film

Energy Technology Data Exchange (ETDEWEB)

Díaz-Becerril, T., E-mail: tomas.diaz.be@gmail.com; Herrera, V.; Morales, C.; García-Salgado, G.; Rosendo, E.; Coyopol, A., E-mail: acoyopol@gmail.com; Galeazzi, R.; Romano, R.; Nieto-Caballero, F.G.; Sarmiento, J.

2017-04-15

Tantalum oxide crystals encrusted in a silicon oxide matrix were synthesized by using a hot filament chemical vapor deposition system (HFCVD). A solid source composed by a mixture in different percentages of Ta{sub 2}O{sub 5} and silicon (Si) powders were used as reactants. The films were grown at 800 °C and 1000 °C under hydrogen ambient. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL) at room temperature. From the XPS results it was confirmed the formation of a mixture of Tantalum oxide, silicon oxide and Si nanoparticles (Ta{sub 2}O{sub 5-}SiO{sub 2}-Si(nc)) as seen from the Si (2p) and Ta (4f) lines corresponding to Si{sup +} and Ta{sup +} states respectively. Ta{sub 2}O{sub 5} and Si nanocrystals (Si-NCs) embedded in the silicon oxide films were observed on HRTEM images which corroborate the XPS results. Finally the emission properties of the films exhibited a broad band from 400 to 850 nm caused by the independent PL properties of tantalum oxide and Si-NCs that compose the film. The intensity of the emissions was observed to be dependent on both temperature of deposition and the ratio Ta{sub 2}O{sub 5}/Si, used as initial reactants. Results from this work might supply useful data for the development of future light emitter devices.

Influence of Na diffusion on thermochromism of vanadium oxide films and suppression through mixed-alkali effect

Energy Technology Data Exchange (ETDEWEB)

Miller, Mark J.; Wang, Junlan, E-mail: junlan@u.washington.edu

2015-10-15

Highlights: • Vanadium oxide films were reactively sputtered on three types of glass substrates. • Na diffusion from soda-lime glass undesirably inhibited thermochromism. • Na diffusion was suppressed by replacing half of sodium in glass with potassium. • Mixed-alkali effect promotes thermochromic VO{sub 2} films on glass substrates. - Abstract: Vanadium(IV) oxide possesses a reversible first-order phase transformation near 68 °C. Potential applications of the material include advanced optical devices and thermochromic smart windows. In this study, vanadium oxide films were grown on three types of glass substrates using reactive DC magnetron sputtering and were then annealed in air. The substrates were characterized with energy-dispersive X-ray spectroscopy, and the films were characterized with X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy, and UV-Vis-NIR spectrophotometry. The results show that the composition of the substrate has a major impact on the microstructure and optical properties of the deposited films. Sodium (Na) in the glass can undesirably inhibit thermochromism; however, replacing half of the Na with potassium (K) suppresses the Na diffusion and promotes the nucleation of pure VO{sub 2} with superior thermochromic functionality. The improved performance is attributed to the mixed-alkali effect between Na and K. These findings are both scientifically and technologically important since soda (Na{sub 2}O) is an essential flux material in glass products such as windows.

Three-dimensional Nitrogen-Doped Reduced Graphene Oxide/Carbon Nanotube Composite Catalysts for Vanadium Flow Batteries

Energy Technology Data Exchange (ETDEWEB)

Fu, Shaofang [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Zhu, Chengzhou [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Song, Junhua [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Engelhard, Mark H. [Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, Richland, WA 99354 USA.; Du, Dan [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Lin, Yuehe [School of Mechanical and Materials Engineering, Washington State University, WA, 99164 USA.; Environmental Molecular Science Laboratory, Pacific Northwest National Laboratory, Richland, WA 99354 USA.

2017-02-22

The development of vanadium redox flow battery is limited by the sluggish kinetics of the reaction, especially the cathodic VO2+/VO2+ redox couples. Therefore, it is vital to develop new electrocatalyst with enhanced activity to improve the battery performance. Herein, we first synthesized the hydrogel precursor by a facile hydrothermal method. After the following carbonization, nitrogen-doped reduced graphene oxide/carbon nanotube composite was obtained. By virtue of the large surface area and good conductivey, which are ensured by the unique hybrid structure, as well as the proper nitrogen doping, the as-prepared composite presents enhanced catalytic performance toward the VO2+/VO2+ redox reaction. We also demonstrated the composite with carbon nanotube loading of 2 mg/mL exhibits the highest activity and remarkable stability in aqueous solution due to the strong synergy between reduced graphene oxide and carbon nanotubes, indicating that this composite might show promising applications in vanadium redox flow battery.

Ion sensing properties of vanadium/tungsten mixed oxides

International Nuclear Information System (INIS)

Guidelli, Eder Jose; Guerra, Elidia Maria; Mulato, Marcelo

2011-01-01

Vanadium/tungsten mixed oxide (V 2 O 5 /WO 3 ) sensing membranes were deposited on glassy carbon substrates and used as the H + sensor of the extended gate field effect transistor (EGFET) device. X-ray diffractograms indicated a decrease of the interplanar spacing of V 2 O 5 after the insertion of WO 3 revealing that the lamellar structure is under compressive stress. The crystallinity increases with increasing WO 3 molar ratio. The film is not homogeneous, with more WO 3 material sitting at the surface. This influences the response of pH sensors using the EGFET configuration. The maximum sensitivity of 68 mV pH -1 was obtained for the sample with 5% WO 3 molar ratio. For higher WO 3 molar ratios, the behavior is not linear. It can be concluded that V 2 O 5 dominates for acidic solutions while WO 3 dominates for basic solutions. Therefore, the mixed oxide with low amount of WO 3 is the main candidate for further use as biosensor.

Oxidation under electron bombardment. A tool for studying the initial states of silicon oxidation

Energy Technology Data Exchange (ETDEWEB)

Carriere, B.; Deville, J.P.; El Maachi, A.

1987-06-01

The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (approx. 10/sup -7/ Torr). This process allows us to build ultra-thin layers of silica on silicon (down to 30 A) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon-oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argon-ion bombardment, is discussed in terms of reactivity and oxide coverage.

Radiation modification of vanadium catalyst for anthracene oxidation

International Nuclear Information System (INIS)

Norek, J.; Vymetal, J.; Mucka, V.; Pospisil, M.; Cabicar, J.

1985-01-01

Vanadium pentoxide on a suitable carrier is often used as catalyst for the oxidation of anthracene in the gaseous phase to 9,10-anthraquinone. The activity and selectivity of the catalyst may be affected by irradiation. The effects were studied of gamma radiation on the properties of the catalyst where the active system was a V 2 O 5 -KOH-K 2 SO 4 mixture on a Al 2 O 3 +SiO 2 carrier. The 60 Co radiation source had an activity of 185 TBq; the carrier of the catalyst was irradiated at a dose rate of 3.05, 1.98 and 0.084 kGy/h to a total dose of 10 kGy. Irradiation increased the selectivity of the catalyst such that in the oxidation temperature optimum of 300 to 400 degC the yield of 9,10-anthraquinone increased by 4.6 to 4.8 %mol. to roughly 90 %mol.; a significant reduction of the content of acid components (phthalanhydride) in the oxidation product also occurred. This effect remained unchanged for 5 months after irradiation. A reduction of selectivity was observed at lower dose rates only in the temperature range between 400 and 480 degC. (A.K.)

Studies of vanadium-phosphorus-oxygen selective oxidation catalysts by sup 31 P and sup 51 V NMR spin-echo and volume susceptibility measurements

Energy Technology Data Exchange (ETDEWEB)

Li, Juan.

1991-10-01

The purpose of this work is to characterize the vanadium-phosphorous oxide (V-P-O) catalysts for the selective oxidation of n-butane and 1-butene to maleic anhydride. The utility of solid state nuclear magnetic resonance as an analytical tool in this investigation lies in its sensitivity to the electronic environment surrounding the phosphorous and vanadium nuclei, and proximity of paramagnetic species. Spin-echo mapping NMR of {sup 31}p and {sup 51}v and volume magnetic susceptibility measurements were used as local microscopic probes of the presence of V{sup 5+}, V{sup 4+}, V{sup 3+} species in the model compounds: {beta}-VOPO{sub 4}, {beta}-VOPO{sub 4} treated with n-butane/1-butene, (VO){sub 2}P{sub 2}O{sub 7} treated with n-butane/1-butene; and industrial catalysts with P/V (phosphorus to vanadium) ratio of 0.9, 1.0 and 1.1, before and after treatment with n-butane and 1-butene. The NMR spectra provide a picture of how the oxidation states of vanadium are distributed in these catalysts. 73 refs., 32 figs., 8 tabs.

The fabrication and visible-near-infrared optical modulation of vanadium dioxide/silicon dioxide composite photonic crystal structure

Energy Technology Data Exchange (ETDEWEB)

Liang, Jiran; Li, Peng; Song, Xiaolong; Zhou, Liwei [Tianjin University, School of Microelectronics, Tianjin (China)

2017-12-15

We demonstrated a visible and near-infrared light tunable photonic nanostructure, which is composed of vanadium dioxide (VO{sub 2}) thin film and silicon dioxide (SiO{sub 2}) ordered nanosphere arrays. The vanadium films were sputtered on two-dimensional (2D) SiO{sub 2} sphere arrays. VO{sub 2} thin films were prepared by rapid thermal annealing (RTA) method with different oxygen flow rates. The close-packed VO{sub 2} shell formed a continuous surface, the composition of VO{sub 2} films in the structure changed when the oxygen flow rates increased. The 2D VO{sub 2}/SiO{sub 2} composite photonic crystal structure exhibited transmittance trough tunability and near-infrared (NIR) transmittance modulation. When the oxygen flow rate increased from 3 slpm to 4 slpm, the largest transmittance trough can be regulated from 904 to 929 nm at low temperature, the transmittance troughs also appear blue shift when the VO{sub 2} phase changes from insulator to metal. The composite nanostructure based on VO{sub 2} films showed visible transmittance tunability, which would provide insights into the glass color changing in smart windows. (orig.)

Broadband dielectric spectroscopy of oxidized porous silicon

International Nuclear Information System (INIS)

Axelrod, Ekaterina; Urbach, Benayahu; Sa'ar, Amir; Feldman, Yuri

2006-01-01

Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals

Broadband dielectric spectroscopy of oxidized porous silicon

Energy Technology Data Exchange (ETDEWEB)

Axelrod, Ekaterina [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Urbach, Benayahu [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Sa' ar, Amir [Racah Institute of Physics and the Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel); Feldman, Yuri [Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904 (Israel)

2006-04-07

Dielectric measurements accompanied by infrared absorption and photoluminescence (PL) spectroscopy were used to investigate the electrical and optical properties of oxidized porous silicon (PS). As opposed to non-oxidized PS, only high temperature relaxation processes could be resolved for oxidized PS. Two relaxation processes have been observed. The first process is related to dc-conductivity that dominates at high temperatures and low frequencies. After subtraction of dc-conductivity we could analyse a second high-temperature relaxation process that is related to interface polarization induced by charge carriers trapped at the host matrix-pore interfaces. We found that, while the main effect of the oxidation on the PL appears to be a size reduction in the silicon nanocrystals that gives rise to a blue shift of the PL spectrum, its main contribution to the dielectric properties turns out to be blocking of transport channels in the host tissue and activation of hopping conductivity between silicon nanocrystals.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Vanadium and affective disorders

International Nuclear Information System (INIS)

Naylor, G.J.

1985-01-01

The oxidation reduction state of vanadium will influence its inhibitory effect, and it has been suggested that the control of this oxidation reduction could be a physiological means of controlling Na-K ATPase and hence membrane transport. However, there is no general agreement on this. For such a hypothesis to be true, tissue concentrations of vanadium would need to be sufficient to cause inhibition of Na-K ATPase. There has been considerable variation in the concentration of vanadium reported to be present in human blood and plasma - e.g., 8.4 μmoleliter, 0.11 μmoleliter, 0.04 μmoleliter and 0.0006-0.018 μmliter. Methods of assay have varied, even including enzymic methods, but the two major methods now used are neutron activation analysis and atomic absorption spectrophotometry using an electrical flameless atomizer. Using neutron activation analysis, difficulties arise from the short half-ife of V 52 (3.76 min) and for the need to separate Na 24 and Cl 36 from the sample since their radiation interfere with those from V 52 . Results from preirradiation separation agree well with those from atomic absorption spectrophotometry, but those from postirradiation separation are usually much lower. Though there is no agreement on the physiological role of vanadium there is evidence that it plays a part in the etiology of manic-depressive psychosis

Oxidative Stress as a Mechanism Involved in Kidney Damage After Subchronic Exposure to Vanadium Inhalation and Oral Sweetened Beverages in a Mouse Model.

Science.gov (United States)

Espinosa-Zurutuza, Maribel; González-Villalva, Adriana; Albarrán-Alonso, Juan Carlos; Colín-Barenque, Laura; Bizarro-Nevares, Patricia; Rojas-Lemus, Marcela; López-Valdéz, Nelly; Fortoul, Teresa I

Kidney diseases have notably increased in the last few years. This is partially explained by the increase in metabolic syndrome, diabetes, and systemic blood hypertension. However, there is a segment of the population that has neither of the previous risk factors, yet suffers kidney damage. Exposure to atmospheric pollutants has been suggested as a possible risk factor. Air-suspended particles carry on their surface a variety of fuel combustion-related residues such as metals, and vanadium is one of these. Vanadium might produce oxidative stress resulting in the damage of some organs such as the kidney. Additionally, in countries like Mexico, the ingestion of sweetened beverages is a major issue; whether these beverages alone are responsible for direct kidney damage or whether their ingestion promotes the progression of an existing renal damage generates controversy. In this study, we report the combined effect of vanadium inhalation and sweetened beverages ingestion in a mouse model. Forty CD-1 male mice were distributed in 4 groups: control, vanadium inhalation, 30% sucrose in drinking water, and vanadium inhalation plus sucrose 30% in drinking water. Our results support that vanadium inhalation and the ingestion of 30% sucrose induce functional and histological kidney damage and an increase in oxidative stress biomarkers, which were higher in the combined effect of vanadium plus 30% sucrose. The results also support that the ingestion of 30% sucrose alone without hyperglycemia also produces kidney damage.

Thermal oxidation of silicon with two oxidizing species

International Nuclear Information System (INIS)

Vild-Maior, A.A.; Filimon, S.

1979-01-01

A theoretical model for the thermal oxidation of silicon in wet oxygen is presented. It is shown that the presence of oxygen in the oxidation furnace has an important effect when the water temperature is not too high (less than about 65 deg C). The model is in good agreement with the experimental data. (author)

Oxide layers for silicon detector protection against enviroment effects

International Nuclear Information System (INIS)

Bel'tsazh, E.; Brylovska, I.; Valerian, M.

1986-01-01

It is shown that for protection of silicon detectors of nuclear radiations oxide layers could be used. The layers are produced by electrochemical oxidation of silicon surface with the following low-temperature annealing. These layers have characteristics similar to those for oxide layers produced by treatment of silicon samples at elevated temperature in oxygen flow. To determine properties of oxide layers produced by electrochemical oxidation the α-particle back-scattering method and the method of volt-farad characteristics were used. Protection properties of such layers were checked on the surface-barrier detectors. It was shown that protection properties of such detectors were conserved during long storage at room temperature and during their storage under wet-bulb temperature. Detectors without protection layer have worsened their characteristics

Oxidative dehydrogenation of ethane over vanadium supported on mesoporous materials of M41S family

Czech Academy of Sciences Publication Activity Database

Čapek, J.; Adam, J.; Grygar, Tomáš; Bulánek, R.; Vradman, L.; Košová-Kučerová, G.; Čičmanec, P.; Knotek, P.

2008-01-01

Roč. 342, 1-2 (2008), s. 99-106 ISSN 0926-860X Grant - others:GA ČR(CZ) GP104/07/P038 Program:GP Institutional research plan: CEZ:AV0Z40320502 Keywords : oxidative dehydrogenation * ethane * vanadium * mesoporous materials Subject RIV: CA - Inorganic Chemistry Impact factor: 3.190, year: 2008

Silicon oxide nanoimprint stamp fabrication by edge lithography reinforced with silicon nitride

NARCIS (Netherlands)

Zhao, Yiping; Berenschot, Johan W.; de Boer, Meint J.; Jansen, Henricus V.; Tas, Niels Roelof; Huskens, Jurriaan; Elwenspoek, Michael Curt

2007-01-01

The fabrication of silicon oxide nanoimprint stamp employing edge lithography in combination with silicon nitride deposition is presented. The fabrication process is based on conventional photolithography an weg etching methods. Nanoridges with width dimension of sub-20 nm were fabricated by edge

Vacancy distribution in nonstoichiometric vanadium monoxide

International Nuclear Information System (INIS)

Gusev, A.I.; Davydov, D.A.; Valeeva, A.A.

2011-01-01

Graphical abstract: Display Omitted Research highlights: → A certain fraction of vanadium atoms in disordered cubic vanadium monoxide VO y and ordered tetragonal phase V 52 O 64 is located in tetrahedral positions of a basic cubic lattice. → These positions are never occupied by any atoms in other strongly nonstoichiometric carbides, nitrides and oxides. → Both disordered and ordered structures of vanadium monoxide are characterized by the presence of short-range order of displacements in the oxygen sublattice and short-range order of substitution in the metal sublattice. → The short-range order of displacement is caused by the local displacements of O atoms from V (t) atoms occupying tetrahedral positions. The short-range order of substitution appears because V (t) atoms in the tetrahedral positions are always in the environment of four vacancies □ of the vanadium sublattice. - Abstract: Structural vacancy distribution in the crystal lattice of the tetragonal V 52 O 64 superstructure which is formed on the basis of disordered superstoichiometric cubic vanadium monoxide VO y ≡V x O z is experimentally determined and the presence of significant local atomic displacements and large local microstrains in a crystal lattice of real ordered phase is established. It is shown that the relaxation of local microstrains takes place owing to the basic disordered cubic phase grain refinement and a formation of ordered phase domains. The ordered phase domains grow in the direction from the boundaries to the centre of grains of the disordered basic cubic phase. Isothermal evolution at 970 K of the average domain size in ordered VO 1.29 vanadium monoxide is established. It is shown that the short-range order presents in a metal sublattice of disordered cubic VO y vanadium monoxide. The character of the short-range order is such that vanadium atoms occupying tetrahedral positions are in the environment of four vacant sites of the vanadium sublattice. This means that the

Vanadium pentoxide nanoparticles mimic vanadium haloperoxidases and thwart biofilm formation

Science.gov (United States)

Natalio, Filipe; André, Rute; Hartog, Aloysius F.; Stoll, Brigitte; Jochum, Klaus Peter; Wever, Ron; Tremel, Wolfgang

2012-08-01

Marine biofouling--the colonization of small marine microorganisms on surfaces that are directly exposed to seawater, such as ships' hulls--is an expensive problem that is currently without an environmentally compatible solution. Biofouling leads to increased hydrodynamic drag, which, in turn, causes increased fuel consumption and greenhouse gas emissions. Tributyltin-free antifouling coatings and paints based on metal complexes or biocides have been shown to efficiently prevent marine biofouling. However, these materials can damage the environment through metal leaching (for example, of copper and zinc) and bacteria resistance. Here, we show that vanadium pentoxide nanowires act like naturally occurring vanadium haloperoxidases to prevent marine biofouling. In the presence of bromide ions and hydrogen peroxide, the nanowires catalyse the oxidation of bromide ions to hypobromous acid (HOBr). Singlet molecular oxygen (1O2) is formed and this exerts strong antibacterial activity, which prevents marine biofouling without being toxic to marine biota. Vanadium pentoxide nanowires have the potential to be an alternative approach to conventional anti-biofouling agents.

Rf-sputtered vanadium oxide thin films: effect of oxygen partial pressure on structural and electrochemical properties

CERN Document Server

Park, Y J; Ryu, K S; Chang, S H; Park, S C; Yoon, S M; Kim, D K

2001-01-01

Vanadium oxide thin films with thickness of about 2000 A have been prepared by radio frequency sputter deposition using a V sub 2 O sub 5 target in a mixed argon and oxygen atmosphere with different Ar/O sub 2 ratio ranging from 99/1 to 90/10. X-ray diffraction and X-ray absorption near edge structure spectroscopic studies show that the oxygen content higher than 5% crystallizes a stoichiometric V sub O sub 5 phase, while oxygen deficient phase is formed in the lower oxygen content. The oxygen content in the mixed Ar + O sub 2 has a significant influence on electrochemical lithium insertion/deinsertion property. The discharge-charge capacity of vanadium oxide film increases with increasing the reactive oxygen content. The V sub O sub 5 film deposited at the Ar/O sub 2 ratio of 90/10 exhibits high discharge capacity of 100 mu Ah/cm sup 2 -mu m along with good cycle performance.

Localized and collectivized behaviour of d-electrons in complicated titanium, vanadium and niobium oxides

International Nuclear Information System (INIS)

Bazuev, G.V.; Shvejkin, G.P.

1980-01-01

On the basis of investigation of electric and magnetic properties of oxide compounds of transition metals made are the conclusions on the degree of localization and delocalization of d-electrons in them. Generalized are the investigation results of complicated titanium, vanadium, niobium oxide compounds in low degrees of oxidation with rare earth and alkaline earth elements belonging to the two structural types: perovskite and pyrochlore. Presented are the results of investigations of perovskite-like solid solutions and of variable-content phases containing cations of transition metals in two different oxidation degrees: oxide niobium bronzes of two-valent europium and titanium bronzes of rare-earth elements, as well as Lnsub(1-x)Msub(x)Vsub(1-x)sup(3+)Vsub(x)sup(4+)Osub(3), where M is an alkaline earth element

Geochemistry of vanadium in an epigenetic, sandstone-hosted vanadium- uranium deposit, Henry Basin, Utah

Science.gov (United States)

Wanty, R.B.; Goldhaber, M.B.; Northrop, H.R.

1990-01-01

The epigenetic Tony M vanadium-uranium orebody in south-central Utah is hosted in fluvial sandstones of the Morrison Formation (Upper Jurassic). Measurements of the relative amounts of V+3 and V +4 in ore minerals show that V+3 is more abundant. Thermodynamic calculations show that vanadium was more likely transported to the site of mineralization as V+4. The ore formed as V+4 was reduced by hydrogen sulfide, followed by hydrolysis and precipitation of V+3 in oxide minerals or chlorite. Uranium was transported as uranyl ion (U+6), or some complex thereof, and reduced by hydrogen sulfide, forming coffinite. Detrital organic matter in the rocks served as the carbon source for sulfate-reducing bacteria. Vanadium most likely was derived from the dissolution of iron-titanium oxides. Uranium probably was derived from the overlying Brushy Basin Member of the Morrison Formation. Previous studies have shown that the ore formed at the density-stratified interface between a basinal brine and dilute meteoric water. The mineralization processes described above occurred within the mixing zone between these two fluids. -from Authors

Suppression of interfacial voids formation during silane (SiH4)-based silicon oxide bonding with a thin silicon nitride capping layer

Science.gov (United States)

Lee, Kwang Hong; Bao, Shuyu; Wang, Yue; Fitzgerald, Eugene A.; Seng Tan, Chuan

2018-01-01

The material properties and bonding behavior of silane-based silicon oxide layers deposited by plasma-enhanced chemical vapor deposition were investigated. Fourier transform infrared spectroscopy was employed to determine the chemical composition of the silicon oxide films. The incorporation of hydroxyl (-OH) groups and moisture absorption demonstrates a strong correlation with the storage duration for both as-deposited and annealed silicon oxide films. It is observed that moisture absorption is prevalent in the silane-based silicon oxide film due to its porous nature. The incorporation of -OH groups and moisture absorption in the silicon oxide films increase with the storage time (even in clean-room environments) for both as-deposited and annealed silicon oxide films. Due to silanol condensation and silicon oxidation reactions that take place at the bonding interface and in the bulk silicon, hydrogen (a byproduct of these reactions) is released and diffused towards the bonding interface. The trapped hydrogen forms voids over time. Additionally, the absorbed moisture could evaporate during the post-bond annealing of the bonded wafer pair. As a consequence, defects, such as voids, form at the bonding interface. To address the problem, a thin silicon nitride capping film was deposited on the silicon oxide layer before bonding to serve as a diffusion barrier to prevent moisture absorption and incorporation of -OH groups from the ambient. This process results in defect-free bonded wafers.

Self-assembly of a tetrahedral 58-nuclear barium vanadium oxide cluster.

Science.gov (United States)

Kastner, Katharina; Puscher, Bianka; Streb, Carsten

2013-01-07

We report the synthesis and characterization of a molecular barium vanadium oxide cluster featuring high nuclearity and high symmetry. The tetrameric, 2.3 nm cluster H(5)[Ba(10)(NMP)(14)(H(2)O)(8)[V(12)O(33)](4)Br] is based on a bromide-centred, octahedral barium scaffold which is capped by four previously unknown [V(12)O(33)](6-) clusters in a tetrahedral fashion. The compound represents the largest polyoxovanadate-based heterometallic cluster known to date. The cluster is formed in organic solution and it is suggested that the bulky N-methyl-2-pyrrolidone (NMP) solvent ligands allow the isolation of this giant molecule and prevent further condensation to a solid-state metal oxide. The cluster is fully characterized using single-crystal XRD, elemental analysis, ESI mass spectrometry and other spectroscopic techniques.

Oxidation of vanadium metal in oxygen plasma and their characterizations

Science.gov (United States)

Sharma, Rabindar Kumar; Singh, Megha; Kumar, Prabhat; Reddy, G. B.

2015-09-01

In this report, the role of oxygen plasma on oxidation of vanadium (V) metal and the volatilization of its oxides has been studied as a function of source (V metal strip) temperature (Tss) and oxygen partial pressure (PO2). The presence of O2-plasma not only enhances the oxidation rate but also ficilitates in transport of oxide molecules from metal to substrate, as confirmed by the simultanous deposition of oxide film onto substrate. Both the oxidized metal strips and oxide films deposited on substrates are characterized separately. The structural and vibrational results evidence the presence of two different oxide phases (i.e. orthorhombic V2O5 and monocilinic V O2) in oxide layers formed on V metal strips, whereas the oxide films deposited on substrates exhibit only orthorhombic phase (i.e. V2O5). The decrease in peak intensities recorded from heated V metal strips on increasing Tss points out the increment in the rate of oxide volatilization, which also confirms by the oxide layer thickness measurements. The SEM results show the noticeable surface changes on V-strips as the function of Tss and PO2 and their optimum values are recorded to be 500 ˚ C and 7.5 × 10-2 Torr, respectively to deposit maximum thick oxide film on substrate. The formation of microcracks on oxidized V-strips, those responsible to countinue oxidation is also confirmed by SEM results. The compositional study of oxide layers formed on V-strips, corroborates their pureness and further assures about the existence of mixed oxide phases. The effect of oxygen partial pressure on oxidation of V-metal has also been discussed in the present report. All the results are well in agreement to each other.

Ab Initio Calculations of Transport Properties of Vanadium Oxides

Science.gov (United States)

Lamsal, Chiranjivi; Ravindra, N. M.

2018-04-01

The temperature-dependent transport properties of vanadium oxides have been studied near the Fermi energy using the Kohn-Sham band structure approach combined with Boltzmann transport equations. V2O5 exhibits significant thermoelectric properties, which can be attributed to its layered structure and stability. Highly anisotropic electrical conduction in V2O5 is clearly manifested in the calculations. Due to specific details of the band structure and anisotropic electron-phonon interactions, maxima and crossovers are also seen in the temperature-dependent Seebeck coefficient of V2O5. During the phase transition of VO2, the Seebeck coefficient changes by 18.9 µV/K, which is close to (within 10% of) the observed discontinuity of 17.3 µV/K.

Effects of gamma irradiations on reactive pulsed laser deposited vanadium dioxide thin films

Science.gov (United States)

Madiba, I. G.; Émond, N.; Chaker, M.; Thema, F. T.; Tadadjeu, S. I.; Muller, U.; Zolliker, P.; Braun, A.; Kotsedi, L.; Maaza, M.

2017-07-01

Vanadium oxide films are considered suitable coatings for various applications such as thermal protective coating of small spacecrafts because of their thermochromic properties. While in outer space, such coating will be exposed to cosmic radiations which include γ-rays. To study the effect of these γ-rays on the coating properties, we have deposited vanadium dioxide (VO2) films on silicon substrates and subjected them to extensive γ-irradiations with typical doses encountered in space missions. The prevalent crystallographic phase after irradiation remains the monoclinic VO2 phase but the films preferential orientation shifts to lower angles due to the presence of disordered regions caused by radiations. Raman spectroscopy measurements also evidences that the VO2 structure is slightly affected by gamma irradiation. Indeed, increasing the gamma rays dose locally alters the crystalline and electronic structures of the films by modifying the V-V inter-dimer distance, which in turns favours the presence of the VO2 metallic phase. From the XPS measurements of V2p and O1s core level spectra, an oxidation of vanadium from V4+ towards V5+ is revealed. The data also reveal a hydroxylation upon irradiation which is corroborated by the vanishing of a low oxidation state peak near the Fermi energy in the valence band. Our observations suggest that gamma radiations induce the formation of Frenkel pairs. Moreover, THz transmission measurements show that the long range structure of VO2 remains intact after irradiation whilst the electrical measurements evidence that the coating resistivity decreases with gamma irradiation and that their transition temperature is slightly reduced for high gamma ray doses. Even though gamma rays are only one of the sources of radiations that are encountered in space environment, these results are very promising with regards to the potential of integration of such VO2 films as a protective coating for spacecrafts.

Vanadium recycling in the United States in 2004

Science.gov (United States)

Goonan, Thomas G.

2011-01-01

As one of a series of reports that describe the recycling of metal commodities in the United States, this report discusses the flow of vanadium in the U.S. economy in 2004. This report includes a description of vanadium supply and demand in the United States and illustrates the extent of vanadium recycling and recycling trends. In 2004, apparent vanadium consumption, by end use, in the United States was 3,820 metric tons (t) in steelmaking and 232 t in manufacturing, of which 17 t was for the production of superalloys and 215 t was for the production of other alloys, cast iron, catalysts, and chemicals. Vanadium use in steel is almost entirely dissipative because recovery of vanadium from steel scrap is chemically impeded under the oxidizing conditions in steelmaking furnaces. The greatest amount of vanadium recycling is in the superalloy, other-alloy, and catalyst sectors of the vanadium market. Vanadium-bearing catalysts are associated with hydrocarbon recovery and refining in the oil industry. In 2004, 2,850 t of vanadium contained in alloy scrap and spent catalysts was recycled, which amounted to about 44 percent of U.S. domestic production. About 94 percent of vanadium use in the United States was dissipative (3,820 t in steel/4,050 t in steel+fabricated products).

Vanadium-substituted heteropolyacids immobilized on amine- functionalized mesoporous MCM-41: A recyclable catalyst for selective oxidation of alcohols with H2O2

International Nuclear Information System (INIS)

Dong, Xinbo; Wang, Danjun; Li, Kebin; Zhen, Yanzhong; Hu, Huaiming; Xue, Ganglin

2014-01-01

Graphical abstract: Vanadium-substituted phosphotungstic acids are immobilized on amine- functionalized mesoporous MCM-41 and the hybrid catalyst is proved to be a highly efficient solid catalyst for the oxidation of aromatic alcohols to the corresponding carbonyl compounds with H 2 O 2 , featured by the high conversion and selectivity, easy recovery, and quite steady reuse. - Highlights: • Vanadium-substituted phosphotungstic acid immobilized on amine-functionalized mesoporous MCM-41 are prepared. • HPAs were fixed on the inner surface of mesoporous MCM-41 by chemical bonding to aminosilane groups. • The hybrid catalyst showed much higher catalytic activity than the pure HPAs. • The hybrid catalyst is a highly efficient recyclable solid catalyst for the selective oxidation of aromatic alcohols. - Abstract: New hybrid materials of vanadium-substituted phosphotungstic acids (VHPW) immobilized on amine-functionalized mesoporous MCM-41 (VHPW/MCM-41/NH 2 ) are prepared and characterized by FT-IR, XRD, N 2 adsorption, elemental analysis, SEM and TEM for their structural integrity and physicochemical properties. It is found that the structure of the heteropolyacids is retained upon immobilization over mesoporous materials. The catalytic activities of these hybrid materials are tested in the selective oxidation of alcohols to the carbonyl products with 30% aqueous H 2 O 2 as oxidant in toluene. The catalytic activities of different number of vanadium-substituted phosphotungstic acid are investigated, and among the catalysts, H 5 [PV 2 W 10 O 40 ] immobilized on amine-functionalized MCM-41 exhibits the highest activity with 97% conversion and 99% selectivity in the oxidation of benzyl alcohol to benzaldehyde. The hybrid catalyst is proved to be a highly efficient recyclable solid catalyst for the selective oxidation of aromatic alcohols to the corresponding aldehydes with H 2 O 2

The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells

International Nuclear Information System (INIS)

Colder, H.; Marie, P.; Gourbilleau, F.

2008-01-01

Silicon nanostructures are promising candidate for the intrinsic layer on pin solar cells. In this work we report on new material: silicon-rich silicon oxide (SRSO) deposited by reactive magnetron sputtering of a pure silica target and an interesting structure: multilayers consisting of a stack of SRSO and pure silicon oxide layers. Two thicknesses of the SRSO sublayer, t SRSO , are studied 3 nm and 5 nm whereas the thickness of silica sublayer is maintaining at 3 nm. The presence of nanocrystallites of silicon, evidenced by X-Ray diffraction (XRD), leads to photoluminescence (PL) emission at room temperature due to the quantum confinement of the carriers. The PL peak shifts from 1.3 eV to 1.5 eV is correlated to the decreasing of t SRSO from 5 nm down to 3 nm. In the purpose of their potential utilization for i-layer, the optical properties are studied by absorption spectroscopy. The achievement a such structures at promising absorption properties. Moreover by favouring the carriers injection by the tunnel effect between silicon nanograins and silica sublayers, the multilayers seem to be interesting for solar cells

Effect of vanadium compounds on acid phosphatase activity.

Science.gov (United States)

Vescina, C M; Sálice, V C; Cortizo, A M; Etcheverry, S B

1996-01-01

The direct effect of different vanadium compounds on acid phosphatase (ACP) activity was investigated. Vanadate and vanadyl but not pervanadate inhibited the wheat germ ACP activity. These vanadium derivatives did not alter the fibroblast Swiss 3T3 soluble fraction ACP activity. Using inhibitors of tyrosine phosphatases (PTPases), the wheat germ ACP was partially characterized as a PTPase. This study suggests that the inhibitory ability of different vanadium derivatives to modulate ACP activity seems to depend on the geometry around the vanadium atom more than on the oxidation state. Our results indicate a correlation between the PTPase activity and the sensitivity to vanadate and vanadyl cation.

Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Jingnan Tong

2018-02-01

Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

Mechanical grooving of oxidized porous silicon to reduce the reflectivity of monocrystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Zarroug, A.; Dimassi, W.; Ouertani, R.; Ezzaouia, H. [Laboratoire de Photovoltaique, Centre des Recherches et des Technologies de l' Energie, BP. 95, Hammam-Lif 2050 (Tunisia)

2012-10-15

In this work, we are interested to use oxidized porous silicon (ox-PS) as a mask. So, we display the creating of a rough surface which enhances the absorption of incident light by solar cells and reduces the reflectivity of monocrystalline silicon (c-Si). It clearly can be seen that the mechanical grooving enables us to elaborate the texturing of monocrystalline silicon wafer. Results demonstrated that the application of a PS layer followed by a thermal treatment under O2 ambient easily gives us an oxide layer of uniform size which can vary from a nanometer to about ten microns. In addition, the Fourier transform infrared (FTIR) spectroscopy investigations of the PS layer illustrates the possibility to realize oxide layer as a mask for porous silicon. We found also that this simple and low cost method decreases the total reflectivity (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

An extraction process to recover vanadium from low-grade vanadium-bearing titanomagnetite

Energy Technology Data Exchange (ETDEWEB)

Chen, Desheng; Zhao, Hongxin; Hu, Guoping [National Engineering Laboratory for Hydrometallurgical Cleaner Production Technology, Beijing 100190 (China); Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190 (China); Qi, Tao, E-mail: tqgreen@ipe.ac.cn [National Engineering Laboratory for Hydrometallurgical Cleaner Production Technology, Beijing 100190 (China); Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190 (China); Yu, Hongdong; Zhang, Guozhi [National Engineering Laboratory for Hydrometallurgical Cleaner Production Technology, Beijing 100190 (China); Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190 (China); Wang, Lina, E-mail: linawang@ipe.ac.cn [National Engineering Laboratory for Hydrometallurgical Cleaner Production Technology, Beijing 100190 (China); Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190 (China); Wang, Weijing [National Engineering Laboratory for Hydrometallurgical Cleaner Production Technology, Beijing 100190 (China); Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing 100190 (China)

2015-08-30

Highlights: • The leaching solution contains high concentration of acid, iron, impurities and lower vanadium. • 99.4% of vanadium and 4.2% of iron were extracted by three-stage extraction process. • 99.6% of vanadium and 5.4% of iron were stripped by three-stage stripping process. • The stripping solution contains 40.16 g/L V{sub 2}O{sub 5}, 0.691 g/L Fe, 0.007 g/L TiO{sub 2} and 0.247 g/L CaO. • The vanadium product of V{sub 2}O{sub 5} with purity of 99.12%, 0.026% Fe and well crystallized. - Abstract: An extraction process to recover vanadium from low-grade vanadium-bearing titanomagnetite was developed. In this study, a mixed solvent system of di(2-ethylhexyl) phosphate (D2EHPA) and tri-n-butyl phosphate (TBP) diluted with kerosene was used for the selective extraction of vanadium from a hydrochloric acid leaching solution that contained low vanadium concentration with high concentrations of iron and impurities of Ca, Mg, and Al. In the extraction process, the initial solution pH and the phase ratio had considerable functions in the extraction of vanadium from the hydrochloric acid leaching solution. Under optimal extraction conditions (i.e., 30–40 °C for 10 min, 1:3 phase ratio (O/A), 20% D2EHPA concentration (v/v), and 0–0.8 initial solution pH), 99.4% vanadium and only 4.2% iron were extracted by the three-stage counter-current extraction process. In the stripping process with H{sub 2}SO{sub 4} as the stripping agent and under optimal stripping conditions (i.e., 20% H{sub 2}SO{sub 4} concentration, 5:1 phase ratio (O/A), 20 min stripping time, and 40 °C stripping temperature), 99.6% vanadium and only 5.4% iron were stripped by the three-stage counter-current stripping process. The stripping solution contained 40.16 g/L V{sub 2}O{sub 5}, 0.691g/L Fe, 0.007 g/L TiO{sub 2}, 0.006 g/L SiO{sub 2} and 0.247 g/L CaO. A V{sub 2}O{sub 5} product with a purity of 99.12% V{sub 2}O{sub 5} and only 0.026% Fe was obtained after the oxidation, precipitation

NEXAFS characterization and reactivity studies of bimetallic vanadium molybdenum oxynitride hydrotreating catalysts

Energy Technology Data Exchange (ETDEWEB)

Kapoor, R.; Oyama, S.T. [Virginia Polytechnic Inst., Blacksburg, VA (United States); Fruehberger, B.; Chen, J.G. [Exxon Research and Engineering Company, Annandale, NJ (United States)

1997-02-27

The surface and bulk compositions of vanadium molybdenum oxynitride (V{sub 2}MoO{sub 1.7}N{sub 2.4}), prepared by temperature-programmed reaction (TPR) of vanadium molybdenum oxide (V{sub 2}MoO{sub 8}) with ammonia, have been characterized using near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The NEXAFS data were recorded at the K-edges of nitrogen and oxygen, the L-edge of vanadium, and the M-edge of molybdenum. The nitrogen K-edge region of V-Mo oxynitride shows the characteristic NEXAFS features of early-transition-metal nitrides, although these features are different from those of either VN or Mo{sub 2}N. Furthermore, comparison of the electron yield and fluorescence yield measurements also reveals that the oxidation state is different for vanadium near the surface region and for vanadium in the bulk, which is estimated to be 2.8 {+-} 0.3 and 3.8 {+-} 0.3, respectively. The oxidation state of bulk molybdenum is also estimated to be 4.4 {+-} 0.3. The X-ray diffraction pattern shows that the bulk phase of the bimetallic oxide is different from the pure monometallic oxide phases but the oxynitride has a cubic structure that resembles the pure vanadium and molybdenum nitride phases. The V-Mo oxide as prepared shows a preferential orientation of [001] crystallographic planes which is lost during the nitridation process. This shows that the solid state transformation V{sub 2}MoO{sub 8} {yields} V{sub 2}MoO{sub 1.7}N{sub 2.4} is not topotactic. 27 refs., 8 figs., 1 tab.

Transformers: the changing phases of low-dimensional vanadium oxide bronzes.

Science.gov (United States)

Marley, Peter M; Horrocks, Gregory A; Pelcher, Kate E; Banerjee, Sarbajit

2015-03-28

In this feature article, we explore the electronic and structural phase transformations of ternary vanadium oxides with the composition MxV2O5 where M is an intercalated cation. The periodic arrays of intercalated cations ordered along quasi-1D tunnels or layered between 2D sheets of the V2O5 framework induce partial reduction of the framework vanadium atoms giving rise to charge ordering patterns that are specific to the metal M and stoichiometry x. This periodic charge ordering makes these materials remarkably versatile platforms for studying electron correlation and underpins the manifestation of phenomena such as colossal metal-insulator transitions, quantized charge corrals, and superconductivity. We describe current mechanistic understanding of these emergent phenomena with a particular emphasis on the benefits derived from scaling these materials to nanostructured dimensions wherein precise ordering of cations can be obtained and phase relationships can be derived that are entirely inaccessible in the bulk. In particular, structural transformations induced by intercalation are dramatically accelerated due to the shorter diffusion path lengths at nanometer-sized dimensions, which cause a dramatic reduction of kinetic barriers to phase transformations and facilitate interconversion between the different frameworks. We conclude by summarizing numerous technological applications that have become feasible due to recent advances in controlling the structural chemistry and both electronic and structural phase transitions in these versatile frameworks.

The vanadium/oxygen system in the analysis of sodium for oxygen

International Nuclear Information System (INIS)

Walker, J.A.J.; Price, W.B.

1981-05-01

An investigation of the V-O-Na system at 1023 K is described for oxygen in sodium contents of 5 to 25 ppm. Electron spectroscopy combined with depth profiling is used to determine the vanadium/oxygen ratios inwards from the surface of vanadium foil and these ratios are compared with theoretical predictions. The validity of the vanadium wire technique as an analytical method is examined and a model for the vanadium oxidation is suggested. (author)

Vanadium

International Nuclear Information System (INIS)

Duke, V.W.A.

1983-07-01

Although a relatively abundant element, vanadium occurs only rarely in sufficient concentration to be worked commercially. In most cases, vanadium is produced as a co-product of some other element, most commonly iron. The principal ore deposits of vanadium occur in titaniferous magnetites that have been formed by magnetic segregation. Important commercial deposits of vanadium also occur associated with uranium, and with phosphate deposits. The principal uses of vanadium are in the production of special purpose, particularly high-strength low-alloy steels, in the manufacture of titanium alloys, and as a catalyst, notably in the manufacture of sulphuric acid. Small quantities of vanadium, often in combination with niobium, are added to steel to bring about toughening through grain refinement, and increased tensile strength through precipitation hardening. Known world reserves of vanadium are very large and fully adequate to meet any foreseeable demand. By far the largest known deposits of vanadium occur in South Africa. Many other similar deposits are known, but are only exploited in the USSR and China. The present total world demand for vanadium amounts to about 40 000 tons of metal annually and this is produced primarily in four countries, South Africa, the USSR, the People's Republic of China and the United States of America, in that order. South Africa is the principal vanadium producing country in the world, supplying vanadium in various forms. Vanadium has a very low and non-accumulative toxicity; recovery plants can be operated in such a manner to ensure no air or steam pollution results

Effective Recovery of Vanadium from Oil Refinery Waste into Vanadium-Based Metal-Organic Frameworks.

Science.gov (United States)

Zhan, Guowu; Ng, Wei Cheng; Lin, Wenlin Yvonne; Koh, Shin Nuo; Wang, Chi-Hwa

2018-03-06

Carbon black waste, an oil refinery waste, contains a high concentration of vanadium(V) leftover from the processing of crude oil. For the sake of environmental sustainability, it is therefore of interest to recover the vanadium as useful products instead of disposing of it. In this work, V was recovered in the form of vanadium-based metal-organic frameworks (V-MOFs) via a novel pathway by using the leaching solution of carbon black waste instead of commercially available vanadium chemicals. Two different types of V-MOFs with high levels of crystallinity and phase purity were fabricated in very high yields (>98%) based on a coordination modulation method. The V-MOFs exhibited well-defined and controlled shapes such as nanofibers (length: > 10 μm) and nanorods (length: ∼270 nm). Furthermore, the V-MOFs showed high catalytic activities for the oxidation of benzyl alcohol to benzaldehyde, indicating the strong potential of the waste-derived V-MOFs in catalysis applications. Overall, our work offers a green synthesis pathway for the preparation of V-MOFs by using heavy metals of industrial waste as the metal source.

Effect of substrate temperature on thermochromic vanadium dioxide thin films sputtered from vanadium target

Science.gov (United States)

Madiba, I. G.; Kotsedi, L.; Ngom, B. D.; Khanyile, B. S.; Maaza, M.

2018-05-01

Vanadium dioxide films have been known as the most promising thermochromic thin films for smart windows which self-control the solar radiation and heat transfer for energy saving, comfort in houses and automotives. Such an attractive technological application is due to the fact that vanadium dioxide crystals exhibit a fast semiconductor-to-metal phase transition at a transition temperature Tc of about 68 °C, together with sharp optical changes from high transmitive to high reflective coatings in the IR spectral region. The phase transition has been associated with the nature of the microstructure, stoichiometry and stresses related to the oxide. This study reports on the effect of the crystallographic quality controlled by the substrate temperature on the thermochromic properties of vanadium dioxide thin films synthesized by reactive radio frequency inverted cylindrical magnetron sputtering from vanadium target. The reports results are based on X-ray diffraction, Atomic force microscopy, and UV-Visible spectrophotometer. The average crystalline grain size of VO2 increases with the substrate temperature, inducing stress related phenomena within the films.

Nafion/Silicon Oxide Composite Membrane for High Temperature Proton Exchange Membrane Fuel Cell

Institute of Scientific and Technical Information of China (English)

无

2007-01-01

Nafion/Silicon oxide composite membranes were produced via in situ sol-gel reaction of tetraethylorthosilicate (TEOS) in Nafion membranes. The physicochemical properties of the membranes were studied by FT-IR, TG-DSC and tensile strength. The results show that the silicon oxide is compatible with the Nafion membrane and the thermo stability of Nafion/Silicon oxide composite membrane is higher than that of Nafion membrane. Furthermore, the tensile strength of Nafion/Silicon oxide composite membrane is similar to that of the Nafion membrane. The proton conductivity of Nafion/Silicon oxide composite membrane is higher than that of Nafion membrane. When the Nafion/Silicon oxide composite membrane was employed as an electrolyte in H2/O2 PEMFC, a higher current density value (1 000 mA/cm2 at 0.38 V) than that of the Nafion 1135 membrane (100 mA/cm2 at 0.04 V) was obtained at 110 ℃.

Nano-ridge fabrication by local oxidation of silicon edges with silicon nitride as a mask

NARCIS (Netherlands)

Haneveld, J.; Berenschot, Johan W.; Maury, P.A.; Jansen, Henricus V.

2005-01-01

A method to fabricate nano-ridges over a full wafer is presented. The fabrication method uses local oxidation of silicon, with silicon nitride as a mask, and wet anisotropic etching of silicon. The realized structures are 7-20 nm wide, 40-100 nm high and centimeters long. All dimensions are easily

Optical spectra of vanadium (5, 4) compounds during extraction by di-2-ethylhexylphosphoric acid

International Nuclear Information System (INIS)

Kurbatova, L.D.; Medvedeva, N.I.

2000-01-01

Optical spectra of vanadium (5, 4) complexes with HDEHP are studied using literature data on quantum-chemical calculations of vanadium (5) and vanadium (4) oxides. Extraction of vanadium is conducted by undiluted HDEHP from sulfuric acid solutions. Absorption electron spectra (AES) of vanadium (5), vanadium (4) and vanadium (5, 4) compounds are presented. In AES of vanadium (5, 4) four absorption bands at 24000, 17000, 14500 and 13500 cm -1 appear. Comparison with spectra of vanadium (5) and vanadium (4) shows that band 17000 cm -1 which appears only during mutual extraction of vanadium (5) and vanadium (4) is caused by transitions appearing between filled and empty levels of d-zone broadened by vanadium (5) and vanadium (4) interaction [ru

The electronic structure and metal-insulator transitions in vanadium oxides

International Nuclear Information System (INIS)

Mossanek, Rodrigo Jose Ochekoski

2010-01-01

The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

Influence of sample oxidation on the nature of optical luminescence from porous silicon

International Nuclear Information System (INIS)

Coulthard, I.; Antel, W. J. Jr.; Freeland, J. W.; Sham, T. K.; Naftel, S. J.; Zhang, P.

2000-01-01

Site-selective luminescence experiments were performed upon porous-silicon samples exposed to varying degrees of oxidation. The source of different luminescence bands was determined to be due to either quantum confinement in nanocrystalline silicon or defective silicon oxide. Of particular interest is the defective silicon-oxide luminescence band found at 2.1 eV, which was found to frequently overlap with a luminescence band from nanocrystalline silicon. Some of the historical confusion and debate with regards to the source of luminescence from porous silicon can be attributed to this overlap. (c) 2000 American Institute of Physics

Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

Directory of Open Access Journals (Sweden)

Youngseok Lee

2012-01-01

Full Text Available It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0 which improves the efficiency of HIT solar cell. The ultrathin thermal passivation silicon oxide (SiO2 layer was deposited by RTO system in the temperature range 500–950°C for 2 to 6 minutes. The thickness of the silicon oxide layer was affected by RTO annealing temperature and treatment time. The best value of surface recombination velocity was recorded for the sample treated at a temperature of 850°C for 6 minutes at O2 flow rate of 3 Lpm. A surface recombination velocity below 25 cm/s was obtained for the silicon oxide layer of 4 nm thickness. This ultrathin SiO2 layer was employed for the fabrication of HIT solar cell structure instead of a-Si:H, (i layer and the passivation and tunneling effects of the silicon oxide layer were exploited. The photocurrent was decreased with the increase of illumination intensity and SiO2 thickness.

Novel acid-base hybrid membrane based on amine-functionalized reduced graphene oxide and sulfonated polyimide for vanadium redox flow battery

International Nuclear Information System (INIS)

Cao, Li; Sun, Qingqing; Gao, Yahui; Liu, Luntao; Shi, Haifeng

2015-01-01

A series of novel acid-base hybrid membranes (SPI/PEI-rGO) based on sulfonated polyimide (SPI) with polyethyleneimine-functionalized reduced graphene oxide (PEI-rGO) are prepared by a solution-casting method for vanadium redox flow battery (VRB). FT-IR and XPS results prove the successful fabrication of PEI-rGO and SPI/PEI-rGO hybrid membranes, which show a dense and homogeneous structure observed by SEM. The physicochemical properties such as water uptake, swelling ratio, ion exchange capacity, proton conductivity and vanadium ion permeability are well controlled by the incorporated PEI-rGO fillers. The interfacial-formed acid-base pairs between PEI-rGO and SPI matrix effectively reduce the swelling ratio and vanadium ion permeability, increasing the stability performance of the hybrid membranes. SPI/PEI-rGO-2 hybrid membrane exhibits a higher coulombic efficiency (CE, 95%) and energy efficiency (EE, 75.6%) at 40 mA cm −2 , as compared with Nafion 117 membrane (CE, 91% and EE, 66.8%). The self-discharge time of the VRB with SPI/PEI-rGO-2 hybrid membrane (80 h) is longer than that of Nafion 117 membrane (26 h), demonstrating the excellent blocking ability for vanadium ion. After 100 charge-discharge cycles, SPI/PEI-rGO-2 membrane exhibits the good stability under strong oxidizing and acid condition, proving that SPI/PEI-rGO acid-base hybrid membranes could be used as the promising candidates for VRB applications

Wet-Chemical Preparation of Silicon Tunnel Oxides for Transparent Passivated Contacts in Crystalline Silicon Solar Cells.

Science.gov (United States)

Köhler, Malte; Pomaska, Manuel; Lentz, Florian; Finger, Friedhelm; Rau, Uwe; Ding, Kaining

2018-05-02

Transparent passivated contacts (TPCs) using a wide band gap microcrystalline silicon carbide (μc-SiC:H(n)), silicon tunnel oxide (SiO 2 ) stack are an alternative to amorphous silicon-based contacts for the front side of silicon heterojunction solar cells. In a systematic study of the μc-SiC:H(n)/SiO 2 /c-Si contact, we investigated selected wet-chemical oxidation methods for the formation of ultrathin SiO 2 , in order to passivate the silicon surface while ensuring a low contact resistivity. By tuning the SiO 2 properties, implied open-circuit voltages of 714 mV and contact resistivities of 32 mΩ cm 2 were achieved using μc-SiC:H(n)/SiO 2 /c-Si as transparent passivated contacts.

Immobilization of (dd)heteronuclear hexacyanoferrates(II) in a gelatin matrix

International Nuclear Information System (INIS)

Mikhajlov, O.V.

2008-01-01

Data pertinent to potentiality of preparing salts of (dd)heteronuclear hexacyanoferrates(II) with(M 1 ) II and (M 2 ) II (M 1 , M 2 = Mn, Co, Ni, Cu, Zn, Cd) as a result of contact between M 1 2 [Fe(CN) 6 ] immobilized in a gelatin matrix and aqueous solutions of metal chlorides have been systematized and summarized. The decisive role of the gelatin matrix, performing the function of an organizing system in formation of (dd)heteronuclear hexacyanoferrates(II) of metals, has been pointed out [ru

Integration of functional complex oxide nanomaterials on silicon

Directory of Open Access Journals (Sweden)

Jose Manuel eVila-Fungueiriño

2015-06-01

Full Text Available The combination of standard wafer-scale semiconductor processing with the properties of functional oxides opens up to innovative and more efficient devices with high value applications that can be produced at large scale. This review uncovers the main strategies that are successfully used to monolithically integrate functional complex oxide thin films and nanostructures on silicon: the chemical solution deposition approach (CSD and the advanced physical vapor deposition techniques such as oxide molecular beam epitaxy (MBE. Special emphasis will be placed on complex oxide nanostructures epitaxially grown on silicon using the combination of CSD and MBE. Several examples will be exposed, with a particular stress on the control of interfaces and crystallization mechanisms on epitaxial perovskite oxide thin films, nanostructured quartz thin films, and octahedral molecular sieve nanowires. This review enlightens on the potential of complex oxide nanostructures and the combination of both chemical and physical elaboration techniques for novel oxide-based integrated devices.

The role of extra-atomic relaxation in determining Si2p binding energy shifts at silicon/silicon oxide interfaces

International Nuclear Information System (INIS)

Zhang, K.Z.; Greeley, J.N.; Banaszak Holl, M.M.; McFeely, F.R.

1997-01-01

The observed binding energy shift for silicon oxide films grown on crystalline silicon varies as a function of film thickness. The physical basis of this shift has previously been ascribed to a variety of initial state effects (Si endash O ring size, strain, stoichiometry, and crystallinity), final state effects (a variety of screening mechanisms), and extrinsic effects (charging). By constructing a structurally homogeneous silicon oxide film on silicon, initial state effects have been minimized and the magnitude of final state stabilization as a function of film thickness has been directly measured. In addition, questions regarding the charging of thin silicon oxide films on silicon have been addressed. From these studies, it is concluded that initial state effects play a negligible role in the thickness-dependent binding energy shift. For the first ∼30 Angstrom of oxide film, the thickness-dependent binding energy shift can be attributed to final state effects in the form of image charge induced stabilization. Beyond about 30 Angstrom, charging of the film occurs. copyright 1997 American Institute of Physics

Hydrometallurgic treatment of a mineral containing uranium, vanadium and phosphorus

International Nuclear Information System (INIS)

Echenique, Patricia; Fruchtenicht, Fernando; Gil, Daniel; Vigo, Daniel; Bouza, Angel; Vert, Gabriela; Becquart, Elena

1987-01-01

A preliminary study of a mineral has been made towards the hydrometallurgy separation of uranium, vanadium and phosphorus. After the ore dressing, work on sulfuric acid with oxidation leaching has been made, to get the uranium, vanadium and phosphorus in solution. For the separation and purification of these elements, two alternative solvent extraction methods have been tested. One of them has been the extraction of uranium and vanadium and a selective stripping of both elements. The second one has been the selective extraction of uranium and vanadium at different aqueous solutions pH. In both methods, the same reagent has been used: di(2-ethylhexyl) phosphoric acid, kerosene as diluent with two different synergistic agents: TOPO (tri-n-octyl phosphine oxide) and TBP (tri-n-butyl phosphate). Batch studies have been made to determine the equilibrium isotherms for uranium and vanadium. A continuous countercurrent simulation method has been used to get the best phase ratio and to test different stripping agents. For the first method, an important loss of uranium and vanadium at the feed solution conditioning for the extraction step has been observed. For the second method, a good recovery of uranium has been reached, but there has been losses of vanadium in pH adjustment. Nevertheless, among these processes, the last seems to work better in this mineral hydrometallurgy. (Author) [es

Carbon nanotube network-silicon oxide non-volatile switches.

Science.gov (United States)

Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

2014-12-08

The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

Vanadium oxide V2O5 reaction with calcium metavanadate

International Nuclear Information System (INIS)

Krasnenko, T.I.; Slobodin, B.V.; Zhilyaev, V.A.

1983-01-01

Complex physicochemical studies on the V 2 O 5 Ca(VO 3 ) 2 mixtures, annealed under different conditions, were conducted. It was established that the V 2 O 5 -Ca(VO 3 ) 2 system is characterized by the following features: defective structure of initial components, which are in equilibrium state; irreversible structural transformation without changes in the macrosymmetry (530 deg C) of calcium metavanadate, deficient in calcium and oxygen; melting of eutectic mixture of components which are in equilibrium at 616+-3 deg C; Ca(VO 3 ) 2 melting with decomposition at 775+-3 deg C. Besides this, the formation of oxide vanadium bronze of β-type calcium is possible under some conditions (narrow temperature range, certain partial oxygen pressure, etc)

High rate capability of lithium/silver vanadium oxide cells

International Nuclear Information System (INIS)

Takeuchi, E.S.; Zelinsky, M.A.; Keister, P.

1986-01-01

High rate characteristics of the lithium/silver vanadium oxide system were investigated in test cells providing four different limiting surface areas. The cells were tested by constant current and constant resistance discharge with current densities ranging from 0.04 to 6.4 mA/cm/sup 2/. The maximum current density under constant resistance and constant current discharges which would deliver 50% of theoretical capacity was determined. The ability of the cells to deliver high current pulses was evaluated by application of 10 second pulses with current densities ranging from 3 to 30 mA/cm/sup 2/. The voltage delay characteristics of the cells were determined after 1 to 3 months of storage at open circuit voltage or under low level background currents. The volumetric and gravimetric energy density of the SVO system is compared to other cathode materials

Electron-beam deposition of vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Marvel, R.E.; Appavoo, K. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Choi, B.K. [Vanderbilt University, Department of Electrical Engineering and Computer Science, Nashville, TN (United States); Nag, J. [Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States); Haglund, R.F. [Vanderbilt University, Interdisciplinary Materials Science Program, Nashville, TN (United States); Vanderbilt University, Institute for Nanoscale Science and Engineering, Nashville, TN (United States); Vanderbilt University, Department of Physics and Astronomy, Nashville, TN (United States)

2013-06-15

Developing a reliable and efficient fabrication method for phase-transition thin-film technology is critical for electronic and photonic applications. We demonstrate a novel method for fabricating polycrystalline, switchable vanadium dioxide thin films on glass and silicon substrates and show that the optical switching contrast is not strongly affected by post-processing annealing times. The method relies on electron-beam evaporation of a nominally stoichiometric powder, followed by fast annealing. As a result of the short annealing procedure we demonstrate that films deposited on silicon substrates appear to be smoother, in comparison to pulsed laser deposition and sputtering. However, optical performance of e-beam evaporated film on silicon is affected by annealing time, in contrast to glass. (orig.)

Thermal Oxidation of Structured Silicon Dioxide

DEFF Research Database (Denmark)

Christiansen, Thomas Lehrmann; Hansen, Ole; Jensen, Jørgen Arendt

2014-01-01

The topography of thermally oxidized, structured silicon dioxide is investigated through simulations, atomic force microscopy, and a proposed analytical model. A 357 nm thick oxide is structured by removing regions of the oxide in a masked etch with either reactive ion etching or hydrofluoric acid....... Subsequent thermal oxidation is performed in both dry and wet ambients in the temperature range 950◦C to 1100◦C growing a 205 ± 12 nm thick oxide in the etched mask windows. Lifting of the original oxide near the edge of the mask in the range 6 nm to 37 nm is seen with increased lifting for increasing...

Supported Vanadium Oxide Catalysts: Quantitative Spectroscopy, Preferential Adsorption of V^4+/5+, and Al2O3 Coating of Zeolite Y

NARCIS (Netherlands)

Catana, Gabriela; Rao, R.R.; Weckhuysen, B.M.; Voort, Pascal van der; Vansant, Etienne; Schoonheydt, R.A.

1998-01-01

A series of supported vanadium oxide catalysts were prepared by the incipient wetness method as a function of the support composition (Al2O3, SiO2, and USY), the metal oxide loading (0-1 wt %), and the impregnation salt (vanadyl sulfate and ammonium vanadate). These catalysts have been studied by

Photoconduction in silicon rich oxide films

Energy Technology Data Exchange (ETDEWEB)

Luna-Lopez, J A; Carrillo-Lopez, J; Flores-Gracia, F J; Garcia-Salgado, G [CIDS-ICUAP, Benemerita Universidad Autonoma de Puebla. Ed. 103 D and C, col. San Manuel, Puebla, Pue. Mexico 72570 (Mexico); Aceves-Mijares, M; Morales-Sanchez, A, E-mail: jluna@buap.siu.m, E-mail: jluna@inaoep.m [INAOE, Luis Enrique Erro No. 1, Apdo. 51, Tonantzintla, Puebla, Mexico 72000 (Mexico)

2009-05-01

Photoconduction of silicon rich oxide (SRO) thin films were studied by current-voltage (I-V) measurements, where ultraviolet (UV) and white (Vis) light illumination were applied. SRO thin films were deposited by low pressure chemical vapour deposition (LPCVD) technique, using SiH{sub 4} (silane) and N{sub 2}O (nitrous oxide) as reactive gases at 700 {sup 0}. The gas flow ratio, Ro = [N{sub 2}O]/[SiH{sub 4}] was used to control the silicon excess. The thickness and refractive index of the SRO films were 72.0 nm, 75.5 nm, 59.1 nm, 73.4 nm and 1.7, 1.5, 1.46, 1.45, corresponding to R{sub o} = 10, 20, 30 and 50, respectively. These results were obtained by null ellipsometry. Si nanoparticles (Si-nps) and defects within SRO films permit to obtain interesting photoelectric properties as a high photocurrent and photoconduction. These effects strongly depend on the silicon excess, thickness and structure type. Two different structures (Al/SRO/Si and Al/SRO/SRO/Si metal-oxide-semiconductor (MOS)-like structures) were fabricated and used as devices. The photocurrent in these structures is dominated by the generation of carriers due to the incident photon energies ({approx}3.0-1.6 eV and 5 eV). These structures showed large photoconductive response at room temperature. Therefore, these structures have potential applications in optoelectronics devices.

Functionalization of 2D macroporous silicon under the high-pressure oxidation

Science.gov (United States)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Vanadium-substituted heteropolyacids immobilized on amine- functionalized mesoporous MCM-41: A recyclable catalyst for selective oxidation of alcohols with H{sub 2}O{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Dong, Xinbo [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); Wang, Danjun [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); College of Chemistry Chemical Engineering, Yanan University, Shaanxi Key Laboratory of Chemical Reaction Engineering, Yan' an 716000 (China); Li, Kebin [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); Zhen, Yanzhong [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); College of Chemistry Chemical Engineering, Yanan University, Shaanxi Key Laboratory of Chemical Reaction Engineering, Yan' an 716000 (China); Hu, Huaiming [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China); Xue, Ganglin, E-mail: xglin707@163.com [Key Laboratory of Synthetic and Natural Functional Molecule Chemistry, Department of Chemistry (Ministry of Education), Northwest University, Xi' an 710069 (China)

2014-09-15

Graphical abstract: Vanadium-substituted phosphotungstic acids are immobilized on amine- functionalized mesoporous MCM-41 and the hybrid catalyst is proved to be a highly efficient solid catalyst for the oxidation of aromatic alcohols to the corresponding carbonyl compounds with H{sub 2}O{sub 2}, featured by the high conversion and selectivity, easy recovery, and quite steady reuse. - Highlights: • Vanadium-substituted phosphotungstic acid immobilized on amine-functionalized mesoporous MCM-41 are prepared. • HPAs were fixed on the inner surface of mesoporous MCM-41 by chemical bonding to aminosilane groups. • The hybrid catalyst showed much higher catalytic activity than the pure HPAs. • The hybrid catalyst is a highly efficient recyclable solid catalyst for the selective oxidation of aromatic alcohols. - Abstract: New hybrid materials of vanadium-substituted phosphotungstic acids (VHPW) immobilized on amine-functionalized mesoporous MCM-41 (VHPW/MCM-41/NH{sub 2}) are prepared and characterized by FT-IR, XRD, N{sub 2} adsorption, elemental analysis, SEM and TEM for their structural integrity and physicochemical properties. It is found that the structure of the heteropolyacids is retained upon immobilization over mesoporous materials. The catalytic activities of these hybrid materials are tested in the selective oxidation of alcohols to the carbonyl products with 30% aqueous H{sub 2}O{sub 2} as oxidant in toluene. The catalytic activities of different number of vanadium-substituted phosphotungstic acid are investigated, and among the catalysts, H{sub 5}[PV{sub 2}W{sub 10}O{sub 40}] immobilized on amine-functionalized MCM-41 exhibits the highest activity with 97% conversion and 99% selectivity in the oxidation of benzyl alcohol to benzaldehyde. The hybrid catalyst is proved to be a highly efficient recyclable solid catalyst for the selective oxidation of aromatic alcohols to the corresponding aldehydes with H{sub 2}O{sub 2}.

Vanadium based materials as electrode materials for high performance supercapacitors

Science.gov (United States)

Yan, Yan; Li, Bing; Guo, Wei; Pang, Huan; Xue, Huaiguo

2016-10-01

As a kind of supercapacitors, pseudocapacitors have attracted wide attention in recent years. The capacitance of the electrochemical capacitors based on pseudocapacitance arises mainly from redox reactions between electrolytes and active materials. These materials usually have several oxidation states for oxidation and reduction. Many research teams have focused on the development of an alternative material for electrochemical capacitors. Many transition metal oxides have been shown to be suitable as electrode materials of electrochemical capacitors. Among them, vanadium based materials are being developed for this purpose. Vanadium based materials are known as one of the best active materials for high power/energy density electrochemical capacitors due to its outstanding specific capacitance and long cycle life, high conductivity and good electrochemical reversibility. There are different kinds of synthetic methods such as sol-gel hydrothermal/solvothermal method, template method, electrospinning method, atomic layer deposition, and electrodeposition method that have been successfully applied to prepare vanadium based electrode materials. In our review, we give an overall summary and evaluation of the recent progress in the research of vanadium based materials for electrochemical capacitors that include synthesis methods, the electrochemical performances of the electrode materials and the devices.

Collisional properties of weakly bound heteronuclear dimers

NARCIS (Netherlands)

Marcelis, B.; Kokkelmans, S.J.J.M.F.; Shlyapnikov, G.V.; Petrov, D.S.

2008-01-01

We consider collisional properties of weakly bound heteronuclear molecules (dimers) formed in a two-species mixture of atoms with a large mass difference. We focus on dimers containing light fermionic atoms as they manifest collisional stability due to an effective dimer-dimer repulsion originating

Hybrid polyaniline/bentonite-vanadium(V) oxide nanocomposites

International Nuclear Information System (INIS)

Anaissi, F.J.; Demets, G.J.-F.; Timm, R.A.; Toma, H.E.

2003-01-01

This work focuses on the preparation and properties of novel ternary composites generated from the redox polymerization of aniline inside the lamellar bentonite-vanadium(V) oxide (BV) matrix. These materials are stable in water and usual organic solvents, and their good electrical conductivity ensures potential applications as electrode modifiers, for analytical and sensor purposes. The incorporation of polyaniline (pani) into the BV matrices, leads to the decay of the charge transfer band at 450 nm and to the rise of a strong band around 650 nm, reflecting the reduction of V V sites, concomitant with the formation of polyaniline, in the emeraldine form. The modest expansion (∼2.5 A) observed in the pani intercalated composites, is consistent with the orientation of the polyaniline chains parallel with the interlamellar planes. On the other hand, the presence of intercalated polymer seems to stabilize the BV framework, minimizing the structural reorganization usually required for the insertion of lithium ions into the matrix. Interestingly, in small amounts, e.g. in BV(pani) 0.7 , polyaniline dramatically increases the conductivity and charge-capacity of the BV matrix; while, increasing amounts of polyaniline lead to an opposing effect

Demonstration of slot-waveguide structures on silicon nitride / silicon oxide platform.

Science.gov (United States)

Barrios, C A; Sánchez, B; Gylfason, K B; Griol, A; Sohlström, H; Holgado, M; Casquel, R

2007-05-28

We report on the first demonstration of guiding light in vertical slot-waveguides on silicon nitride/silicon oxide material system. Integrated ring resonators and Fabry-Perot cavities have been fabricated and characterized in order to determine optical features of the slot-waveguides. Group index behavior evidences guiding and confinement in the low-index slot region at O-band (1260-1370nm) telecommunication wavelengths. Propagation losses of <20 dB/cm have been measured for the transverse-electric mode of the slot-waveguides.

Application of vanadium incorporated phosphomolybdate supported on the modified kaolinin synthesis of diphenyl carbonate by oxidative carbonylation with phenol

Directory of Open Access Journals (Sweden)

Peng Meng

2017-01-01

Full Text Available Keggin-type molybdophosphoric acid, molybdophosphoric salt and vanadium incorporated molybdophosphoric salt supported on the modified kaolin (MK were investigated as redox co-catalysts for the oxidative carbonylation of phenol to diphenyl carbonate (DPC in the absence of solvent. The 20 wt.% of MnAMPV5 (one kind of vanadium incorporated molybdophosphoric salt loaded on MK showed the highest catalytic activity with the yield of 24.68% and a TON of 306, while the selectivity amounts to nearly 100% in all the carbonylation reactions. The catalysts were characterized by XRD, BET, XPS and H2-TPR. The reusability study showed that the catalysts were stable and active.

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

Energy Technology Data Exchange (ETDEWEB)

Geissbühler, Jonas, E-mail: jonas.geissbuehler@epfl.ch; Werner, Jérémie; Martin de Nicolas, Silvia; Hessler-Wyser, Aïcha; Tomasi, Andrea; Niesen, Bjoern; De Wolf, Stefaan [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); Barraud, Loris; Despeisse, Matthieu; Nicolay, Sylvain [CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland); Ballif, Christophe [Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2000 Neuchâtel (Switzerland); CSEM PV-Center, Jaquet-Droz 1, CH-2000 Neuchâtel (Switzerland)

2015-08-24

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.

The influence of initial defects on mechanical stress and deformation distribution in oxidized silicon

Directory of Open Access Journals (Sweden)

Kulinich O. A.

2008-10-01

Full Text Available The near-surface silicon layers in silicon – dioxide silicon systems with modern methods of research are investigated. It is shown that these layers have compound structure and their parameters depend on oxidation and initial silicon parameters. It is shown the influence of initial defects on mechanical stress and deformation distribution in oxidized silicon.

Charging effects during focused electron beam induced deposition of silicon oxide

NARCIS (Netherlands)

de Boer, Sanne K.; van Dorp, Willem F.; De Hosson, Jeff Th. M.

2011-01-01

This paper concentrates on focused electron beam induced deposition of silicon oxide. Silicon oxide pillars are written using 2, 4, 6, 8, 10-pentamethyl-cyclopenta-siloxane (PMCPS) as precursor. It is observed that branching of the pillar occurs above a minimum pillar height. The branching is

Oxidation of ultra low carbon and silicon bearing steels

Energy Technology Data Exchange (ETDEWEB)

Suarez, Lucia [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: lucia.suarez@ctm.com.es; Rodriguez-Calvillo, Pablo [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: pablo.rodriguez@ctm.com.es; Houbaert, Yvan [Department of Materials Science and Engineering, University of Ghent (Belgium)], E-mail: Yvan.Houbaert@UGent.be; Colas, Rafael [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)], E-mail: rcolas@mail.uanl.mx

2010-06-15

Oxidation tests were carried out in samples from an ultra low carbon and two silicon bearing steels to determine the distribution and morphology of the oxide species present. The ultra low carbon steel was oxidized for short periods of time within a chamber designed to obtain thin oxide layers by controlling the atmosphere, and for longer times in an electric furnace; the silicon steels were reheated only in the electric furnace. The chamber was constructed to study the behaviour encountered during the short period of time between descaling and rolling in modern continuous mills. It was found that the oxide layers formed on the samples reheated in the electric furnace were made of different oxide species. The specimens treated in the chamber had layers made almost exclusively of wustite. Selected oxide samples were studied by scanning electron microscopy to obtain electron backscattered diffraction patterns, which were used to identify the oxide species in the layer.

Development of Vanadium Phosphaate Catalysts for Methanol Production by Selective Oxidation of Methane.

Energy Technology Data Exchange (ETDEWEB)

McCormick, R.L.

1997-10-01

This DOE sponsored study of methane partial oxidation was initiated at Amax Research and Development in Golden, CO in October of 1993. Shortly thereafter the management of Amax closed this R&D facility and the PI moved to the Colorado School of Mines. The project was begun again after contract transfer via a novation agreement. Experimental work began with testing of vandyl pyrophosphate (VPO), a well known alkane selective oxidation catalyst. It was found that VPO was not a selective catalyst for methane conversion yielding primarily CO. However, promotion of VPO with Fe, Cr, and other first row transition metals led to measurable yields for formaldehyde, as noted in the summary table. Catalyst characterization studies indicated that the role of promoters was to stabilize some of the vanadium in the V{sup 5+} oxidation state rather than the V{sup 4+} state formally expected for (VO){sub 2}P{sub 2}O{sub 7}.

Spectrophotometric determination of vanadium in environmental and biological samples

International Nuclear Information System (INIS)

Rekha, D.; Krishnapriya, B.; Subrahmanyam, P.; Reddyprasad, P.; Dilip Kumar, J.; Chiranjeevi, P.

2007-01-01

The method is based on oxidation of p-nitro aniline by vanadium (V) followed by coupling reaction with N-(1-naphthalene-1-y1)ethane-1, 2-diaminedihydrochloride (NEDA) in basic medium of pH 8 to give purple colored derivative. The derivative having an λ max 525nm is stable for 10 days. Beer's law is obeyed for vanadium (V) in the concentration range of 0.03-4.5 μg ml -1 . The proposed method was successfully applied to the analysis of vanadium in environmental and biological samples. (author)

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

Science.gov (United States)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Determination of vanadium in Syrian commercial and raffinate phosphoric acid

International Nuclear Information System (INIS)

Al-Merey, R.

2002-04-01

This study presents two methods for vanadium determination in Syrian commercial phosphoric acid. The vanadium (V) in the oxidized commercial phosphoric acid by ammonium persulfate solution is extracted from 5-M hydrochloride acid medium using N-benzoyl-N-phenyl hydroxyl amine (BPHA) in chloroform as an extracting solution. The first method, the extract vanadium as VOL 2 Cl is changed to V 2 O 3 L 4 complex by the addition of benzimidazole in 1-butanol to the violet organic layer. The absorbance is then measured at 440 nm (the molar absorptivity was found to be 3865 M -1 cm -1 ), where Beer law is applicable up to 36-μg ml -1 . the accuracy, precision and detection limit were found to be 3.7%, 77 ppb and 37 ppb, respectively. the second method, the organic layer is heated to evaporate chloroform, the residue is digested using 20% ammonium persulfate and 2-M sulfuric acid solutions. The vanadium concentration is measured spectrophotometrically by oxidizing gallic acid with persulfate (S 2 O 8 2- ) anion in phosphoric acid medium, where the vanadium (V) acts as a catalyst in the oxidation reaction. This method has a high sensitivity (∼10 -12 ) with accuracy and precision 5% and 0.621 ppb, respectively. Also Beer law at λ m ax=415 nm (ε=∼2 x 10 6 M -1 ) is applicable in the range 2.58-33.3 ppb. (author)

The bioinorganic electrochemistry of vanadium-penicillamine complexes

International Nuclear Information System (INIS)

Bagal, U.A.; Riechel, T.L.

1989-01-01

Vanadium (V) has been found to inhibit (Na + , K + )-ATPase in the sodium pump reaction in erythrocytes. Glutathione has been suggested as the reducing agent that reverses the effect by reducing vanadium to the (IV) oxidation state. Penicillamine is being studied as a model for glutathione since both have sulfhydryl groups which are involved in redox and coordination chemistry. The electrochemistry in DMSO of penicillamine, its carboxylic ester, and their VO 2 + complexes are discussed in this paper

Sponge-like reduced graphene oxide/silicon/carbon nanotube composites for lithium ion batteries

Science.gov (United States)

Fang, Menglu; Wang, Zhao; Chen, Xiaojun; Guan, Shiyou

2018-04-01

Three-dimensional sponge-like reduced graphene oxide/silicon/carbon nanotube composites were synthesized by one-step hydrothermal self-assembly using silicon nanoparticles, graphene oxide and amino modified carbon nanotubes to develop high-performance anode materials of lithium ion batteries. Scanning electron microscopy and transmission electron microscopy images show the structure of composites that Silicon nanoparticles are coated with reduced graphene oxide while amino modified carbon nanotubes wrap around the reduced graphene oxide in the composites. When applied to lithium ion battery, these composites exhibit high initial specific capacity of 2552 mA h/g at a current density of 0.05 A/g. In addition, reduced graphene oxide/silicon/carbon nanotube composites also have better cycle stability than bare Silicon nanoparticles electrode with the specific capacity of 1215 mA h/g after 100 cycles. The three-dimension sponge-like structure not only ensures the electrical conductivity but also buffers the huge volume change, which has broad potential application in the field of battery.

Segregation of boron implanted into silicon on angular configurations of silicon/silicon dioxide oxidation interface

CERN Document Server

Tarnavskij, G A; Obrekht, M S

2001-01-01

One studies segregation of boron implanted into silicon when a wave (interface) of oxidation moves within it. There are four types of angular configurations of SiO sub 2 /Si oxidation interface, that is: direct and reverse shoulders, trench type cavities and a square. By means of computer-aided simulation one obtained and analyzed complex patterns of B concentration distribution within Si, SiO sub 2 domains and at SiO sub 2 /Si interface for all types of angular configurations of the oxidation interface

A comparative assessment of the acute inhalation toxicity of vanadium compounds.

Science.gov (United States)

Rajendran, N; Seagrave, J C; Plunkett, L M; MacGregor, J A

2016-11-01

Vanadium compounds have become important in industrial processes, resulting in workplace exposure potential and are present in ambient air as a result of fossil fuel combustion. A series of acute nose-only inhalation toxicity studies was conducted in both rats and mice in order to obtain comparative data on the acute toxicity potential of compounds used commercially. V 2 O 3 , V 2 O 4 , and V 2 O 5 , which have different oxidation states (+3, +4, +5, respectively), were delivered as micronized powders; the highly water-soluble and hygroscopic VOSO 4 (+4) could not be micronized and was instead delivered as a liquid aerosol from an aqueous solution. V 2 O 5 was the most acutely toxic micronized powder in both species. Despite its lower overall percentage vanadium content, a liquid aerosol of VOSO 4 was more toxic than the V 2 O 5 particles in mice, but not in rats. These data suggest that an interaction of characteristics, i.e., bioavailability, solubility and oxidation state, as well as species sensitivity, likely affect the toxicity potential of vanadium compounds. Based on clinical observations and gross necropsy findings, the lung appeared to be the target organ for all compounds. The level of hazard posed will depend on the specific chemical form of the vanadium. Future work to define the inhalation toxicity potential of vanadium compounds of various oxidation states after repeated exposures will be important in understanding how the physico-chemical and biological characteristics of specific vanadium compounds interact to affect toxicity potential and the potential risks posed to human health.

Hydrothermal synthesis and characterization of novel vanadium oxides and their application as cathodes in lithium secondary batteries

Science.gov (United States)

Chirayil, Thomas George

Novel layered or tunneled vanadium oxides are sought as a substitute for the expensive Lisb{x}CoOsb2 cathode material in lithium rechargeable batteries. The hydrothermal synthesis approach was taken in search of new vanadium oxides in the presence of a structure directing cation, TMA. A systematic study was done on the hydrothermal synthesis of the Vsb{2}Osb{5}-TMAOH-LiOH system. It was determined from this study that the pH of the reaction mixture was very critical in the formation of many compounds. Acetic acid utilized to adjust the pH of the reaction mixture in the presence of TMA behaved as a buffer and maintained a constant pH during the reaction. Hydrothermal synthesis conducted between pH 10 and 2 resulted in the formation of 7 compounds. At the highest pH, a well known compound Lisb3VOsb4, was formed. Between pH 5.2-9, a layered compound, TMAVsb3Osb7 resulted. The thermal treatment of TMAVsb3Osb7 under oxygen lead to an oxidized phase, TMAVsb3Osb8, which increased its lithium capacity significantly. Between pH 5-6, a cluster compound, TMAsb8lbrack Vsb{22}Osb{54}(CHsb3COO)rbrack{*}4Hsb2O with the acetate ion trapped inside the caged Vsb{22}Osb{54} cluster, and a layered vanadium oxide, Lisb{x}Vsb{2-delta}Osb{4-delta}{*}Hsb2O was obtained. The Lisb{x}Vsb{2-delta}Osb{4-delta}{*}Hsb2O compound was dehydrated to form Lisb{x}Vsb{2-delta}Osb{4-delta} and the lithium was removed electrochemically to form a new type of "VOsb2". Several alkylamines, DMSO and an additional water molecule were intercalated to swell the layers of Lisb{x}Vsb{2-delta}Osb{4-delta}{*}Hsb2O. Lowering the pH between 3.0-3.5, resulted in layered compound, TMAVsb4Osb{10}, with TMA residing between the layers. Layered compounds, TMAVsb8Osb{20} and TMAsb{0.17}Hsp+sb{0.1}Vsb2Osb5, were obtained at very acidic conditions. The hydrothermally grown TMAsb{0.17}Hsp+sb{0.1}Vsb2Osb5 is similar to the xerogel Vsb2Osb5 intercalated with TMA synthesized by the sol-gel process. Several trends were observed

Nitric oxide levels in the anterior chamber of vitrectomized eyes with silicon oil

Directory of Open Access Journals (Sweden)

Paulo Escarião

2013-10-01

Full Text Available PURPOSE: To investigate the nitric oxide levels in the anterior chamber of eyes who underwent pars plana vitrectomy (PPV with silicone oil. METHODS: Patients who underwent PPV with silicon oil injection, from february 2005 to august 2007, were selected. Nine patients (nine eyes participated in the study (five women and four men. Nitric oxide concentration was quantified after the aspiration of aqueous humor samples during the procedure of silicon oil removal. Data such as: oil emulsification; presence of oil in the anterior chamber; intraocular pressure and time with silicone oil were evaluated. Values of p <0.05 were considered to be statistically significant. RESULTS: A positive correlation between nitric oxide concentration and time with silicon oil in the vitreous cavity (r=0.799 was observed. The nitric oxide concentration was significantly higher (p=0.02 in patients with silicon oil more than 24 months (0.90µmol/ml ± 0.59, n=3 in the vitreous cavity comparing to patients with less than 24 months (0.19µmol/ml ± 0.10, n=6. CONCLUSION: A positive correlation linking silicone oil time in the vitreous cavity with the nitric oxide concentration in the anterior chamber was observed.

Synthesis of electrochromic vanadium oxide by pulsed spray pyrolysis technique and its properties

International Nuclear Information System (INIS)

Patil, C E; Tarwal, N L; Shinde, P S; Patil, P S; Deshmukh, H P

2009-01-01

A new improved pulsed spray pyrolysis technique (PSPT) was employed to deposit a vanadium oxide (V 2 O 5 ) thin film from a methanolic vanadium chloride precursor onto glass and conducting F : SnO 2 coated glass substrates. The structural, morphological, electrical, optical and spectroscopic properties of the film deposited at 573 K were studied. Infrared spectroscopy and x-ray diffraction confirmed the presence of the V 2 O 5 phase. The V 2 O 5 film (thickness ∼118 nm) is polycrystalline with a tetragonal crystal structure. Scanning electron microscopy reveals compact granular morphology consisting of ∼80-100 nm size grains. The film is transparent in the visible region (average %T ∼70%) with an optical band gap energy of 2.47 eV involving both direct and indirect optical transitions. The room temperature electrical resistivity (conductivity) of the film is 1.6 x 10 8 Ω cm (6.25 x 10 -9 S cm -1 ) with an activation energy of 0.67 eV in the temperature range 300-550 K. It exhibited cathodic electrochromism in the lithium containing electrolyte (0.5 M LiClO 4 + propylene carbonate).

Oxidation and corrosion of silicon-based ceramics and composites

International Nuclear Information System (INIS)

Jacobson, N.S.; Fox, D.S.; Smialek, J.L.

1997-01-01

Silica scales exhibit slow growth rates and a low activation energy. Thus silica-protected materials are attractive high temperature structural materials for their potentially excellent oxidation resistance and well-documented high temperature strength. This review focuses on silicon carbide, silicon nitride, and composites of these materials. It is divided into four parts: (i) Fundamental oxidation mechanisms, (ii) Special properties of silica scales, (iii) Protective coatings, and (iv) Internal oxidation behavior of composites. While the fundamental oxidation mechanism of SiC is understood, there are still many questions regarding the oxidation mechanism of Si 3 N 4 . Silica scales exhibit many unique properties as compared to chromia and alumina. These include slower growth rates, SiO(g) formation, sensitivity to water vapor and impurities, and dissolution by basic molten salts. Protective coatings can limit the deleterious effects. The fourth area-internal oxidation of fibers and fiber coatings in composites-has limited the application of these novel materials. Strategies for understanding and limiting this internal oxidation are discussed. (orig.)

The ability of silicide coating to delay the catastrophic oxidation of vanadium under severe conditions

Energy Technology Data Exchange (ETDEWEB)

Chaia, N., E-mail: nabil.chaia@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Mathieu, S., E-mail: stephane.mathieu@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Rouillard, F., E-mail: fabien.rouillard@cea.fr [CEA, DEN, DPC, SCCME, Laboratoire d’Etude de la Corrosion Non Aqueuse, F-91191 Gif-sur-Yvette (France); Vilasi, M., E-mail: michel.vilasi@univ-lorraine.fr [Université de Lorraine, Institut Jean Lamour – UMR7198, Boulevard des Aiguillettes, BP70239, 54506 Vandoeuvre-lès-Nancy Cedex (France)

2015-02-15

Highlights: • Oxidation protection is due to the formation of a pure silica layer. • V–4Cr–4Ti with V{sub x}Si{sub y} silicide coating withstands 400 1-h cycles (1100 °C-T{sub amb}) in air. • Three-point flexure testing at 950 °C and 75 MPa does not induce coating breakdown. • No delamination between coating and substrate is observed in any test. - Abstract: V–4Cr–4Ti vanadium alloy is a potential cladding material for sodium-cooled fast-neutron reactors (SFRs). However, its affinity for oxygen and the subsequent embrittlement that oxygen induces causes a need for an oxygen diffusion barrier, which can be obtained by manufacturing a multi-layered silicide coating. The present work aims to evaluate the effects of thermal cycling (using a cyclic oxidation device) and tensile and compressive stresses (using the three-point flexure test) on the coated alloy system. Tests were performed in air up to 1100 °C, which is 200 °C higher than the accidental temperature for SFR applications. The results showed that the VSi{sub 2} coating was able to protect the vanadium substrate from oxidation for more than 400 1-h cycles between 1100 °C and room temperature. The severe bending applied to the coated alloy at 950 °C using a load of 75 MPa did not lead to specimen breakage. It can be suggested that the VSi{sub 2} coating has mechanical properties compatible with the V–4Cr–4Ti alloy for SFR applications.

Covalent Surface Modification of Silicon Oxides with Alcohols in Polar Aprotic Solvents.

Science.gov (United States)

Lee, Austin W H; Gates, Byron D

2017-09-05

Alcohol-based monolayers were successfully formed on the surfaces of silicon oxides through reactions performed in polar aprotic solvents. Monolayers prepared from alcohol-based reagents have been previously introduced as an alternative approach to covalently modify the surfaces of silicon oxides. These reagents are readily available, widely distributed, and are minimally susceptible to side reactions with ambient moisture. A limitation of using alcohol-based compounds is that previous reactions required relatively high temperatures in neat solutions, which can degrade some alcohol compounds or could lead to other unwanted side reactions during the formation of the monolayers. To overcome these challenges, we investigate the condensation reaction of alcohols on silicon oxides carried out in polar aprotic solvents. In particular, propylene carbonate has been identified as a polar aprotic solvent that is relatively nontoxic, readily accessible, and can facilitate the formation of alcohol-based monolayers. We have successfully demonstrated this approach for tuning the surface chemistry of silicon oxide surfaces with a variety of alcohol containing compounds. The strategy introduced in this research can be utilized to create silicon oxide surfaces with hydrophobic, oleophobic, or charged functionalities.

Waveguiding properties of Er-implanted silicon-rich oxides

International Nuclear Information System (INIS)

Elliman, R.G.; Forcales, M.; Wilkinson, A.R.; Smith, N.J.

2007-01-01

The optical properties of erbium-doped silicon-rich silicon-oxide waveguides containing amorphous silicon nanoclusters and/or silicon nanocrystals are reported. Both amorphous nanoclusters and nanocrystals are shown to act as effective sensitizers for Er, with nanocrystals being more effective at low pump powers and nanoclusters being more effective at higher pump powers. All samples are shown to exhibit photo-induced absorption, as measured for a guided 1.5 μm probe beam while the waveguide was illuminated from above with a 477 nm pump beam. At a given pump power samples containing silicon nanocrystals exhibited greater attenuation than samples containing amorphous nanoclusters. The absorption is shown to be consistent with confined-carrier absorption due to photoexcited carriers in the nanocrystals and/or nanoclusters

Melt quenched vanadium oxide embedded in graphene oxide sheets as composite electrodes for amperometric dopamine sensing and lithium ion battery applications

Energy Technology Data Exchange (ETDEWEB)

Sreejesh, M. [Materials Research Laboratory, Department of Physics, National Institute of Technology Karnataka, P.O. Srinivasnagar, Surathkal, Mangaluru 575 025 (India); Shenoy, Sulakshana [Functional Nanostructured Materials Research Laboratory, Department of Physics, National Institute of Technology Karnataka, P.O. Srinivasnagar, Surathkal, Mangaluru 575 025 (India); Sridharan, Kishore, E-mail: kishore@nitk.edu.in [Functional Nanostructured Materials Research Laboratory, Department of Physics, National Institute of Technology Karnataka, P.O. Srinivasnagar, Surathkal, Mangaluru 575 025 (India); Kufian, D.; Arof, A.K. [Centre for Ionics, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Nagaraja, H.S., E-mail: nagaraja@nitk.edu.in [Materials Research Laboratory, Department of Physics, National Institute of Technology Karnataka, P.O. Srinivasnagar, Surathkal, Mangaluru 575 025 (India)

2017-07-15

Highlights: • Layered vanadium oxides (MVO) are prepared through melt quenching process. • MVO is hydrothermally treated with graphene oxide to form MVGO composites. • Dopamine detection capacity using MVGO is 0.07 μM with good selectivity. • Sensitivity of dopamine detection is 25.02 μA mM{sup −1} cm{sup −2}. • Discharge capacity of MVGO electrode is 200 mAhg{sup −1} after 10 cycles. - Abstract: Electrochemical sensors and lithium-ion batteries are two important topics in electrochemistry that have attracted much attention owing to their extensive applications in enzyme-free biosensors and portable electronic devices. Herein, we report a simple hydrothermal approach for synthesizing composites of melt quenched vanadium oxide embedded on graphene oxide of equal proportion (MVGO50) for the fabrication of electrodes for nonenzymatic amperometic dopamine sensor and lithium-ion battery applications. The sensing performance of MVGO50 electrodes through chronoamperometry studies in 0.1 M PBS solution (at pH 7) over a wide range of dopamine concentration exhibited a highest sensitivity of 25.02 μA mM{sup −1} cm{sup −2} with the lowest detection limit of 0.07 μM. In addition, the selective sensing capability of MVGO50 was also tested through chronoamperometry studies by the addition of a very small concentration of dopamine (10 μM) in the presence of a fairly higher concentration of uric acid (10 mM) as the interfering species. Furthermore, the reversible lithium cycling properties of MVGO50 are evaluated by galvanostatic charge-discharge cycling studies. MVGO50 electrodes exhibited enhanced rate capacity of up to 200 mAhg{sup −1} at a current of 0.1C rate and remained stable during cycling. These results indicate that MVGO composites are potential candidates for electrochemical device applications.

Zirconium oxide nanotube-Nafion composite as high performance membrane for all vanadium redox flow battery

Science.gov (United States)

Aziz, Md. Abdul; Shanmugam, Sangaraju

2017-01-01

A high-performance composite membrane for vanadium redox flow battery (VRB) consisting of ZrO2 nanotubes (ZrNT) and perfluorosulfonic acid (Nafion) was fabricated. The VRB operated with a composite (Nafion-ZrNT) membrane showed the improved ion-selectivity (ratio of proton conductivity to permeability), low self-discharge rate, high discharge capacity and high energy efficiency in comparison with a pristine commercial Nafion-117 membrane. The incorporation of zirconium oxide nanotubes in the Nafion matrix exhibits high proton conductivity (95.2 mS cm-1) and high oxidative stability (99.9%). The Nafion-ZrNT composite membrane exhibited low vanadium ion permeability (3.2 × 10-9 cm2 min-1) and superior ion selectivity (2.95 × 107 S min cm-3). The VRB constructed with a Nafion-ZrNT composite membrane has lower self-discharge rate maintaining an open-circuit voltage of 1.3 V for 330 h relative to a pristine Nafion membrane (29 h). The discharge capacity of Nafion-ZrNT membrane (987 mAh) was 3.5-times higher than Nafion-117 membrane (280 mAh) after 100 charge-discharge cycles. These superior properties resulted in higher coulombic and voltage efficiencies with Nafion-ZrNT membranes compared to VRB with Nafion-117 membrane at a 40 mA cm-2 current density.

Improved reaction sintered silicon nitride. [protective coatings to improve oxidation resistance

Science.gov (United States)

Baumgartner, H. R.

1978-01-01

Processing treatments were applied to as-nitrided reaction sintered silicon nitride (RSSN) with the purposes of improving strength after processing to above 350 MN/m2 and improving strength after oxidation exposure. The experimental approaches are divided into three broad classifications: sintering of surface-applied powders; impregnation of solution followed by further thermal processing; and infiltration of molten silicon and subsequent carburization or nitridation of the silicon. The impregnation of RSSN with solutions of aluminum nitrate and zirconyl chloride, followed by heating at 1400-1500 C in a nitrogen atmosphere containing silicon monoxide, improved RSSN strength and oxidation resistance. The room temperature bend strength of RSSN was increased nearly fifty percent above the untreated strength with mean absolute strengths up to 420 MN/m2. Strengths of treated samples that were measured after a 12 hour oxidation exposure in air were up to 90 percent of the original as-nitrided strength, as compared to retained strengths in the range of 35 to 60 percent for untreated RSSN after the same oxidation exposure.

Electrochemical intercalation of lithium into polypyrrole/silver vanadium oxide composite used for lithium primary batteries

Energy Technology Data Exchange (ETDEWEB)

Lee, Jong-Won; Popov, Branko N. [Center for Electrochemical Engineering, Department of Chemical Engineering, University of South Carolina, Columbia, SC 29208 (United States)

2006-10-20

Hybrid composites of polypyrrole (PPy) and silver vanadium oxide (SVO) used for lithium primary batteries were chemically synthesized by an oxidative polymerization of pyrrole monomer on the SVO surface in an acidic medium. The composite electrode exhibited higher discharge capacity and better rate capability as compared with the pristine SVO electrode. The improvement in electrochemical performance of the composite electrode was due to PPy which accommodates lithium ions and also enhances the SVO utilization. Chronoamperometric and ac-impedance measurements indicated that lithium intercalation proceeds under the mixed control by interfacial charge transfer and diffusion. The enhanced SVO utilization in the composite electrode results from a facilitated kinetics of interfacial charge transfer in the presence of PPy. (author)

Electrochemical intercalation of lithium into polypyrrole/silver vanadium oxide composite used for lithium primary batteries

Science.gov (United States)

Lee, Jong-Won; Popov, Branko N.

Hybrid composites of polypyrrole (PPy) and silver vanadium oxide (SVO) used for lithium primary batteries were chemically synthesized by an oxidative polymerization of pyrrole monomer on the SVO surface in an acidic medium. The composite electrode exhibited higher discharge capacity and better rate capability as compared with the pristine SVO electrode. The improvement in electrochemical performance of the composite electrode was due to PPy which accommodates lithium ions and also enhances the SVO utilization. Chronoamperometric and ac-impedance measurements indicated that lithium intercalation proceeds under the mixed control by interfacial charge transfer and diffusion. The enhanced SVO utilization in the composite electrode results from a facilitated kinetics of interfacial charge transfer in the presence of PPy.

Study on the poisoning effect-of non-vanadium catalysts by potassium

Science.gov (United States)

Zeng, Huanmu; Liu, Ying; Yu, Xiaowei; Lin, Yasi

2018-02-01

The poisoning effect of catalyst by alkali metals is one of the problems in the selective catalytic reduction (SCR) of NO by NH3. Serious deactivation by alkali poisoning have been proved to take place in the commercial vanadium catalyst. Recently, non-vanadium catalysts such as copper oxides, manganese oxides, chromium oxides and cerium oxides have attracted special attentions in SCR application. However, their tolerance in the presence of alkali metals is still doubtful. In this paper, copper oxides, manganese oxides, chromium oxides and cerium oxides supported on TiO2 nanoparticle was prepared by impregnating method. Potassium nitrate was chosen as the precursor of poisoner. Catalytic activities of these catalysts were evaluated before and after the addition of potassium. Some characterization methods including X-ray diffraction and temperature programmed desorption was utilized to reveal the main reason of alkali deactivation.

Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

Science.gov (United States)

Douglas, Anna; Muralidharan, Nitin; Carter, Rachel; Share, Keith; Pint, Cary L.

2016-03-01

Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics.Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g-1 is achieved until the device is triggered with alkaline solutions. Due to the rational design of the active VOx coating enabled by ALD, transience occurs through a rapid disabling step that occurs within seconds, followed by full dissolution of all active materials within 30 minutes of the initial trigger. This work demonstrates how engineered materials for energy storage can provide a basis for next-generation transient systems and highlights porous silicon as a versatile scaffold to integrate transient energy storage into transient electronics. Electronic supplementary information (ESI) available: (i) Experimental details for ALD and material fabrication, ellipsometry film thickness, preparation of gel electrolyte and separator, details for electrochemical measurements, HRTEM image of VOx coated porous silicon, Raman spectroscopy for VOx as-deposited as well as annealed in air for 1 hour at 450 °C, SEM and transient behavior dissolution tests of uniformly coated VOx on

Vanadium oxide nanowire-carbon nanotube binder-free flexible electrodes for supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Perera, Sanjaya D.; Patel, Bijal; Seitz, Oliver; Ferraris, John P.; Balkus, Kenneth J. Jr. [Department of Chemistry and the Alan G. MacDiarmid Nanotech Institute, 800 West Campbell Rd, University of Texas at Dallas, Richardson, TX 75080 (United States); Nijem, Nour; Roodenko, Katy; Chabal, Yves J. [Laboratory for Surface and Nanostructure Modification, Department of Material Science and Engineering, 800 West Campbell Rd, University of Texas Dallas, Richardson, TX 75080 (United States)

2011-10-15

Vanadium pentoxide (V{sub 2}O{sub 5}) layered nanostructures are known to have very stable crystal structures and high faradaic activity. The low electronic conductivity of V{sub 2}O{sub 5} greatly limits the application of vanadium oxide as electrode materials and requires combining with conducting materials using binders. It is well known that the organic binders can degrade the overall performance of electrode materials and need carefully controlled compositions. In this study, we develop a simple method for preparing freestanding carbon nanotube (CNT)-V{sub 2}O{sub 5} nanowire (VNW) composite paper electrodes without using binders. Coin cell type (CR2032) supercapacitors are assembled using the nanocomposite paper electrode as the anode and high surface area carbon fiber electrode (Spectracarb 2225) as the cathode. The supercapacitor with CNT-VNW composite paper electrode exhibits a power density of 5.26 kW Kg{sup -1} and an energy density of 46.3 Wh Kg{sup -1}. (Li)VNWs and CNT composite paper electrodes can be fabricated in similar manner and show improved overall performance with a power density of 8.32 kW Kg{sup -1} and an energy density of 65.9 Wh Kg{sup -1}. The power and energy density values suggest that such flexible hybrid nanocomposite paper electrodes may be useful for high performance electrochemical supercapacitors. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Vanadium oxides supported on hydrotalcite-type precursors: the effect of acid-base properties on the oxidation of isopropanol

Directory of Open Access Journals (Sweden)

D. M. Meira

2006-09-01

Full Text Available Vanadium oxide supported on hydrotalcite-type precursors was studied in the oxidation of isopropanol. Hydrotalcites with different y = Mg/Al ratios were synthesized by the method of coprecipitation nitrates of Mg and Al cations with K2CO3 as precipitant. The decomposition of these hydrotalcite precursors at 450°C yielded homogeneous MgyAlOx mixed oxides that contain the Al+3 cations totally incorporated into the MgO framework. The materials were characterized by chemical analysis, BET superficial area, X-ray diffraction, temperature-programmed reduction (TPR and the reaction of isopropanol, a probe molecule used to evaluate the acid-base properties. The results of TPR showed that the reducibility of V+5 decreased with the increase in magnesium loading in catalysts. The X-ray diffraction patterns of Al-rich hydrotalcite precursors showed the presence of crystalline phases of brucite and gibbsite. It was shown that chemical composition, texture, acid-base properties of the active sites and also Mg/Al ratio strongly affect the formation of the products in the oxidation of isopropanol. The Al-rich catalysts were much more active than the Mg-rich ones, converting isopropanol mainly to propylene.

Vanadium oxides supported on hydrotalcite-type precursors: the effect of acid base properties on the oxidation of isopropanol

Energy Technology Data Exchange (ETDEWEB)

Meira, D.M.; Cortez, G.G. [Faculdade de Engenharia Quimica de Lorena, Lorena, SP (Brazil). Dept. de Engenharia Quimica. Lab. de Catalise II]. E-mail: cortez@dequi.faenquil.br; Monteiro, W.R.; Rodrigues, J.A.J. [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil). Lab. Associado de Combustao e Propulsao]. E-mail: jajr@lcp.inpe.br

2006-07-15

Vanadium oxide supported on hydrotalcite-type precursors was studied in the oxidation of isopropanol. Hydrotalcites with different y = Mg/Al ratios were synthesized by the method of coprecipitation nitrates of Mg and Al cations with K{sub 2}CO{sub 3} as precipitant. The decomposition of these hydrotalcite precursors at 450 deg C yielded homogeneous MgyAlOx mixed oxides that contain the Al{sup +3} cations totally incorporated into the MgO framework. The materials were characterized by chemical analysis, BET superficial area, X-ray diffraction, temperature-programmed reduction (TPR) and the reaction of isopropanol, a probe molecule used to evaluate the acid-base properties. The results of TPR showed that the reducibility of V{sup +5} decreased with the increase in magnesium loading in catalysts. The X-ray diffraction patterns of Al-rich hydrotalcite precursors showed the presence of crystalline phases of brucite and gibbsite. It was shown that chemical composition, texture, acid-base properties of the active sites and also Mg/Al ratio strongly affect the formation of the products in the oxidation of isopropanol. The Al-rich catalysts were much more active than the Mg-rich ones, converting isopropanol mainly to propylene. (author)

Passivating electron contact based on highly crystalline nanostructured silicon oxide layers for silicon solar cells

Czech Academy of Sciences Publication Activity Database

Stuckelberger, J.; Nogay, G.; Wyss, P.; Jeangros, Q.; Allebe, Ch.; Debrot, F.; Niquille, X.; Ledinský, Martin; Fejfar, Antonín; Despeisse, M.; Haug, F.J.; Löper, P.; Ballif, C.

2016-01-01

Roč. 158, Dec (2016), s. 2-10 ISSN 0927-0248 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : surface passivation * passivating contact * nanostructure * silicon oxide * nanocrystalline * microcrystalline * poly-silicon * crystallization * Raman * transmission line measurement Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.784, year: 2016

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector

OpenAIRE

Geissbühler Jonas; Werner Jérémie; Martin de Nicolas Silvia; Barraud Loris; Hessler-Wyser Aïcha; Despeisse Matthieu; Nicolay Sylvain; Tomasi Andrea; Niesen Bjoern; De Wolf Stefaan; Ballif Christophe

2015-01-01

Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p type amorphous silicon with molybdenum oxide films. In this article we evidence that annealing above 130?°C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited c...

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

International Nuclear Information System (INIS)

Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

2010-01-01

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

2010-02-15

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

18O isotopic tracer studies of silicon oxidation in dry oxygen

International Nuclear Information System (INIS)

Han, C.J.

1986-01-01

Oxidation of silicon in dry oxygen has been an important process in the integrated circuit industry for making gate insulators on metal-oxide-semiconductory (MOS) devices. This work examines this process using isotopic tracers of oxygen to determine the transport mechanisms of oxygen through silicon dioxide. Oxides were grown sequentially using mass-16 and mass-18 oxygen gas sources to label the oxygen molecules from each step. The resulting oxides are analyzed using secondary ion mass spectrometry (SIMS). The results of these analyses suggest two oxidant species are present during the oxidation, each diffuses and oxidizes separately during the process. A model from this finding using a sum of two linear-parabolic growth rates, each representing the growth rate from one of the oxidants, describes the reported oxidation kinetics in the literature closely. A fit of this relationship reveals excellent fits to the data for oxide thicknesses ranging from 30 A to 1 μm and for temperatures ranging from 800 to 1200 0 C. The mass-18 oxygen tracers also enable a direct observation of the oxygen solubility in the silicon dioxide during a dry oxidation process. The SIMS profiles establish a maximum solubility for interstitial oxygen at 1000 0 C at 2 x 10 20 cm -3 . Furthermore, the mass-18 oxygen profiles show negligible network diffusion during an 1000 0 C oxidation

Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme

Science.gov (United States)

Li, Fu-Hai; Chiu, Yung-Yueh; Lee, Yen-Hui; Chang, Ru-Wei; Yang, Bo-Jun; Sun, Wein-Town; Lee, Eric; Kuo, Chao-Wei; Shirota, Riichiro

2013-04-01

In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking.

Vanadium Compounds as PTP Inhibitors

Directory of Open Access Journals (Sweden)

Elsa Irving

2017-12-01

Full Text Available Phosphotyrosine signaling is regulated by the opposing actions of protein tyrosine kinases (PTKs and protein tyrosine phosphatases (PTPs. Here we discuss the potential of vanadium derivatives as PTP enzyme inhibitors and metallotherapeutics. We describe how vanadate in the V oxidized state is thought to inhibit PTPs, thus acting as a pan-inhibitor of this enzyme superfamily. We discuss recent developments in the biological and biochemical actions of more complex vanadium derivatives, including decavanadate and in particular the growing number of oxidovanadium compounds with organic ligands. Pre-clinical studies involving these compounds are discussed in the anti-diabetic and anti-cancer contexts. Although in many cases PTP inhibition has been implicated, it is also clear that many such compounds have further biochemical effects in cells. There also remain concerns surrounding off-target toxicities and long-term use of vanadium compounds in vivo in humans, hindering their progress through clinical trials. Despite these current misgivings, interest in these chemicals continues and many believe they could still have therapeutic potential. If so, we argue that this field would benefit from greater focus on improving the delivery and tissue targeting of vanadium compounds in order to minimize off-target toxicities. This may then harness their full therapeutic potential.

Effect of porous silicon layer on the performance of Si/oxide photovoltaic and photoelectrochemical cells

International Nuclear Information System (INIS)

Badawy, Waheed A.

2008-01-01

Photovoltaic and photoelectrochemical systems were prepared by the formation of a thin porous film on silicon. The porous silicon layer was formed on the top of a clean oxide free silicon wafer surface by anodic etching in HF/H 2 O/C 2 H 5 OH mixture (2:1:1). The silicon was then covered by an oxide film (tin oxide, ITO or titanium oxide). The oxide films were prepared by the spray/pyrolysis technique which enables doping of the oxide film by different atoms like In, Ru or Sb during the spray process. Doping of SnO 2 or TiO 2 films with Ru atoms improves the surface characteristics of the oxide film which improves the solar conversion efficiency. The prepared solar cells are stable against environmental attack due to the presence of the stable oxide film. It gives relatively high short circuit currents (I sc ), due to the presence of the porous silicon layer, which leads to the recorded high conversion efficiency. Although the open-circuit potential (V oc ) and fill factor (FF) were not affected by the thickness of the porous silicon film, the short circuit current was found to be sensitive to this thickness. An optimum thickness of the porous film and also the oxide layer is required to optimize the solar cell efficiency. The results represent a promising system for the application of porous silicon layers in solar energy converters. The use of porous silicon instead of silicon single crystals in solar cell fabrication and the optimization of the solar conversion efficiency will lead to the reduction of the cost as an important factor and also the increase of the solar cell efficiency making use of the large area of the porous structures

Development of Doped Microcrystalline Silicon Oxide and its Application to Thin‑Film Silicon Solar Cells

NARCIS (Netherlands)

Lambertz, A.

2015-01-01

The aim of the present study is the development of doped microcrystalline silicon oxide (µc‑SiOx:H) alloys and its application in thin‑film silicon solar cells. The doped µc‑SiOx:H material was prepared from carbon dioxide (CO2), silane (SiH4), hydrogen (H2) gas mixtures using plasma enhanced

A parametric study of laser induced ablation-oxidation on porous silicon surfaces

International Nuclear Information System (INIS)

De Stefano, Luca; Rea, Ilaria; Nigro, M Arcangela; Della Corte, Francesco G; Rendina, Ivo

2008-01-01

We have investigated the laser induced ablation-oxidation process on porous silicon layers having different porosities and thicknesses by non-destructive optical techniques. In particular, the interaction between a low power blue light laser and the porous silicon surfaces has been characterized by variable angle spectroscopic ellipsometry and Fourier transform infrared spectroscopy. The oxidation profiles etched on the porous samples can be tuned as functions of the layer porosity and laser fluence. Oxide stripes of width less than 2 μm and with thicknesses between 100 nm and 5 μm have been produced, depending on the porosity of the porous silicon, by using a 40 x focusing objective

Indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1982-12-28

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Oxidation of mullite-zirconia-alumina-silicon carbide composites

International Nuclear Information System (INIS)

Baudin, C.; Moya, J.S.

1990-01-01

This paper reports the isothermal oxidation of mullite-alumina-zirconia-silicon carbide composites obtained by reaction sintering studied in the temperature interval 800 degrees to 1400 degrees C. The kinetics of the oxidation process was related to the viscosity of the surface glassy layer as well as to the crystallization of the surface film. The oxidation kinetics was halted to T ≤ 1300 degrees C, presumably because of crystallization

Vanadium Recovery from Oil Fly Ash by Carbon Removal and Roast-Leach Process

Science.gov (United States)

Jung, Myungwon; Mishra, Brajendra

2018-02-01

This research mainly focuses on the recovery of vanadium from oil fly ash by carbon removal and the roast-leach process. The oil fly ash contained about 85% unburned carbon and 2.2% vanadium by weight. A vanadium-enriched product was obtained after carbon removal, and the vanadium content of this product was 19% by weight. Next, the vanadium-enriched product was roasted with sodium carbonate to convert vanadium oxides to water-soluble sodium metavanadate. The roasted sample was leached with water at 60°C, and the extraction percentage of vanadium was about 92% by weight. Several analytical techniques, such as inductively coupled plasma atomic emission spectroscopy (ICP-AES), x-ray fluorescence (XRF), and thermogravimetric and differential thermal analysis (TG-DTA), were utilized for sample analyses. Thermodynamic modeling was also conducted with HSC chemistry software to explain the experimental results.

An overview of the oxidation performance of silicide diffusion coatings for vanadium-based alloys for generation IV reactors

International Nuclear Information System (INIS)

Chaia, N.; Mathieu, S.; Cozzika, T.; Rouillard, F.; Desgranges, C.; Courouau, J.L.; Petitjean, C.; David, N.; Vilasi, M.

2013-01-01

Highlights: ► Diffusion barrier to oxygen were manufactured by pack cementation diffusion process. ► The use of CrSi 2 + Si and TiSi 2 + Si as masteralloys increased the quality of the coating. ► Thermodynamic stability (coatings/vanadium) was obtained at the operating temperature. ► MSi 2 coatings developed low growing oxide scale in air and at low oxygen pressure. ► Coatings presented high compatibility with liquid sodium ( 2 ) for 360 h. - Abstract: This study focuses on the development of new protective coatings for the vanadium-based alloy V-4Cr-4Ti. Halide-activated pack-cementation (HAPC) technique was used to develop V x Si y multilayered diffusive silicide coatings. The outer layers (coatings) were formed of VSi 2 doped with 27 at.% Cr or TiSi 2 . These compounds exhibited a very low oxidation rate at 650 °C, both in air and at a low oxygen pressure (He, 5 ppm O 2 ). The coatings formed mainly of MSi 2 were found to be insensitive to pesting and largely unreactive to liquid sodium ( 2 ) during a 360 h compatibility test at 550 °C.

Fluorescence studies of Rhodamine 6G functionalized silicon oxide nanostructures

International Nuclear Information System (INIS)

Baumgaertel, Thomas; Borczyskowski, Christian von; Graaf, Harald

2010-01-01

Selective anchoring of optically active molecules on nanostructured surfaces is a promising step towards the creation of nanoscale devices with new functionalities. Recently we have demonstrated the electrostatic attachment of charged fluorescent molecules on silicon oxide nanostructures prepared by atomic force microscopy (AFM) nanolithography via local anodic oxidation (LAO) of dodecyl-terminated silicon. In this paper we report on our findings from a more detailed optical investigation of the bound dye Rhodamine 6G. High sensitivity optical wide field microscopy as well as confocal laser microscopy have been used to characterize the Rhodamine fluorescence emission. A highly interesting question concerns the interaction between an emitter close to a silicon surface because mechanisms such as energy transfer and fluorescence quenching will occur which are still not fully understood. Since the oxide thickness can be varied during preparation continuously from 1 to ∼ 5 nm, it is possible to investigate the fluorescence of the bound dye in close proximity to the underlying silicon. Using confocal laser microscopy we were also able to obtain optical spectra from the bound molecules. Together with the results from an analysis of their photochemical bleaching behaviour, we conjecture that some of the Rhodamine 6G molecules on the structure are interacting with the oxide, causing a spectral shift and differences in their photochemical properties.

Preparation and characterization of graphene-based vanadium oxide composite semiconducting films with horizontally aligned nanowire arrays

International Nuclear Information System (INIS)

Jung, Hye-Mi; Um, Sukkee

2016-01-01

Highly oriented crystalline hybrid thin films primarily consisting of Magnéli-phase VO 2 and conductive graphene nanoplatelets are fabricated by a sol–gel process via dipping pyrolysis. A combination of chemical, microstructural, and electrical analyses reveals that graphene oxide (GO)-templated vanadium oxide (VO x ) nanocomposite films exhibit a vertically stacked multi-lamellar nanostructure consisting of horizontally aligned vanadium oxide nanowire (VNW) arrays along the (hk0) set of planes on a GO template, with an average crystallite size of 41.4 Å and a crystallographic tensile strain of 0.83%. In addition, GO-derived VO x composite semiconducting films, which have an sp 3 /sp 2 bonding ratio of 0.862, display thermally induced electrical switching properties in the temperature range of − 20 °C to 140 °C, with a transition temperature of approximately 65 °C. We ascribe these results to the use of GO sheets, which serve as a morphological growth template as well as an electrochemically tunable platform for enhancing the charge-carrier mobility. Moreover, the experimental studies demonstrate that graphene-based Magnéli-phase VO x composite semiconducting films can be used in advanced thermo-sensitive smart sensing/switching applications because of their outstanding thermo-electrodynamic properties and high surface charge density induced by the planar-type VNWs. - Highlights: • VO x -graphene oxide composite (G/VO x ) films were fabricated by sol–gel process. • The G/VO x films mainly consisted of Magnéli-phase VO 2 and reduced graphene sheets. • The G/VO x films exhibited multi-lamellar textures with planar VO x nanowire arrays. • The G/VO x films showed the thermo-sensitive electrical switching properties. • Effects of GOs on the electrical characteristics of the G/VO x films were discussed.

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Science.gov (United States)

Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

2017-04-01

Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Silicon heterojunction solar cells with novel fluorinated n-type nanocrystalline silicon oxide emitters on p-type crystalline silicon

Science.gov (United States)

Dhar, Sukanta; Mandal, Sourav; Das, Gourab; Mukhopadhyay, Sumita; Pratim Ray, Partha; Banerjee, Chandan; Barua, Asok Kumar

2015-08-01

A novel fluorinated phosphorus doped silicon oxide based nanocrystalline material have been used to prepare heterojunction solar cells on flat p-type crystalline silicon (c-Si) Czochralski (CZ) wafers. The n-type nc-SiO:F:H material were deposited by radio frequency plasma enhanced chemical vapor deposition. Deposited films were characterized in detail by using atomic force microscopy (AFM), high resolution transmission electron microscopy (HRTEM), Raman, fourier transform infrared spectroscopy (FTIR) and optoelectronics properties have been studied using temperature dependent conductivity measurement, Ellipsometry, UV-vis spectrum analysis etc. It is observed that the cell fabricated with fluorinated silicon oxide emitter showing higher initial efficiency (η = 15.64%, Jsc = 32.10 mA/cm2, Voc = 0.630 V, FF = 0.77) for 1 cm2 cell area compare to conventional n-a-Si:H emitter (14.73%) on flat c-Si wafer. These results indicate that n type nc-SiO:F:H material is a promising candidate for heterojunction solar cell on p-type crystalline wafers. The high Jsc value is associated with excellent quantum efficiencies at short wavelengths (<500 nm).

Interaction of titanium and vanadium with carbon dioxide under heating

International Nuclear Information System (INIS)

Vlasyuk, R.Z.; Kurovskij, V.Ya.; Lyapunov, V.P.; Radomysel'skij, I.D.

1986-01-01

The methods of gravitmetric and X-ray phase analysis as well as analysis of composition of gases in the heating chamber have been used to investigate the mechanism of titanium and vanadium interaction with carbon dioxide in the 300-1000 deg C temperature range. The analogy of mechanisms of the interaction of titanium and vanadium with carbon dioxide in oxides production on the metal surface with subsequent carbidizing treatment at temperatures above 800 deg C is shown. Temperature limits of material operation on the base of titanium or vanadium in carbon dioxide must not exceed 400 or 600 deg C, respectively

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Hae-Min [Institute of NT-IT Fusion Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Jeong, Gyoung Hwa [Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Banyeon 100, Ulsan 44919 (Korea, Republic of); Kim, Sang-Wook [Department of Molecular Science and Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Kim, Chang-Koo, E-mail: changkoo@ajou.ac.kr [Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of)

2017-04-01

Highlights: • Vanadium nitrides were directly synthesized by a one-step chemical precipitation method. • This method was carried out at a low temperature of 70 °C. • Vanadium nitrides had a specific capacitance of 598 F/g. • The equivalent series resistance of the vanadium nitride electrode was 1.42 Ω after 5000 cycles. - Abstract: Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2–5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Structure and function of vanadium haloperoxidases

NARCIS (Netherlands)

Wever, R.; Michibata, H.

2012-01-01

Vanadium haloperoxidases contain the bare metal oxide vanadate as a prosthetic group and differ strongly from the heme peroxidases in substrate specificity and molecular properties. The substrates of these enzymes are limited to halides and sulfides, which in the presence of hydrogen peroxide are

The electrical properties of semiconducting vanadium phosphate glasses

International Nuclear Information System (INIS)

Moridi, G.R.; Hogarth, C.A.; Hekmat Shooar, N.H.

1984-01-01

Vanadium phosphate glasses are a group of oxide glasses which show the semiconducting behaviour. In contrast to the conventional glasses, the conduction mechanism in these glasses is electronic, rather than being ionic. Since 1954, when the first paper appeared on the semiconducting properties of these glasses, much work has been carried out on transition-metal-oxide glasses in general, and vanadium phosphate glasses in particular. The mechanism of conduction is basicaly due to the transport of electrons between the transition-metal ions in different valency states. In the present paper, we have reviewed the previous works on the electrical characteristics of P 2 O 5 -V 2 O 5 glasses and also discussed the current theoretical ideas relevant for the interpretation of the experimental data

Development of an oxidized porous silicon vacuum microtriode

Energy Technology Data Exchange (ETDEWEB)

Smith, II, Don Deewayne [Texas A & M Univ., College Station, TX (United States)

1994-05-01

In order to realize a high-power microwave amplifier design known as a gigatron, a gated field emission array must be developed that can deliver a high-intensity electron beam at gigahertz frequencies. No existing field emission device meets the requirements for a gigatron cathode. In the present work, a porous silicon-based approach is evaluated. The use of porous silicon reduces the size of a single emitter to the nanometer scale, and a true two-dimensional array geometry can be approached. A wide number of applications for such a device exist in various disciplines. Oxidized porous silicon vacuum diodes were first developed in 1990. No systematic study had been done to characterize the performance of these devices as a function of the process parameters. The author has done the first such study, fabricating diodes from p<100>, p<111>, and n<100> silicon substrates. Anodization current densities from 11 mA/cm² to 151 mA/cm² were used, and Fowler-Nordheim behavior was observed in over 80% of the samples. In order to effectively adapt this technology to mainstream vacuum microelectronic applications, a means of creating a gated triodic structure must be found. No previous attempts had successfully yielded such a device. The author has succeeded in utilizing a novel metallization method to fabricate the first operational oxidized porous silicon vacuum microtriodes, and results are encouraging.

Influence of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon capacitors for flash memories

International Nuclear Information System (INIS)

Kim, Hee Dong; An, Ho-Myoung; Kim, Kyoung Chan; Seo, Yu Jeong; Kim, Tae Geun

2008-01-01

We report the effect of post-annealing on the electrical properties of metal/oxide/silicon nitride/oxide/silicon (MONOS) capacitors. Four samples, namely as-deposited and annealed at 750, 850 and 950 °C for 30 s in nitrogen ambient by a rapid thermal process, were prepared and characterized for comparison. The best performance with the largest memory window of 4.4 V and the fastest program speed of 10 ms was observed for the sample annealed at 850 °C. In addition, the highest traps density of 6.84 × 10 18 cm −3 was observed with ideal trap distributions for the same sample by capacitance–voltage (C–V) measurement. These results indicate that the memory traps in the ONO structure can be engineered by post-annealing to improve the electrical properties of the MONOS device

Trimetallic oxide nanocomposites of transition metals titanium and vanadium by sol-gel technique: synthesis, characterization and electronic properties

Science.gov (United States)

Kumar, Amit; Mishra, Neeraj Kumar; Sachan, Komal; Ali, Md Asif; Soaham Gupta, Sachchidanand; Singh, Rajeev

2018-04-01

Novel titanium and vanadium based trimetallic oxide nanocomposites (TMONCs) have been synthesized using metal salts of titanium-vanadium along with three others metals viz. tin, aluminium and zinc as precursors by the sol-gel method. Aqueous ammonia and hydrazine hydrate were used as the reducing agents. The preparations of nanocomposites were monitored by observing the visual changes during each step of synthesis. The synthesized TMONCs were characterized using UV–vis, SEM, EDX, TEM and DLS. Band gap of the synthesized TMONCs ranges from 3–4.5 eV determined using tauc plot. FTIR study revealed the molecular stretching and bending peaks of corresponding M–O/M–O–M bonds thus confirming their formation. Molecular composition and particle size were determined using EDX and DLS respectively. Molecular shape, size and surface morphology have been examined by SEM and TEM.

Chemical vapour deposition of vanadium oxide thermochromic thin films

Science.gov (United States)

Piccirillo, Clara

Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

Field oxide radiation damage measurements in silicon strip detectors

Energy Technology Data Exchange (ETDEWEB)

Laakso, M [Particle Detector Group, Fermilab, Batavia, IL (United States) Research Inst. for High Energy Physics (SEFT), Helsinki (Finland); Singh, P; Shepard, P F [Dept. of Physics and Astronomy, Univ. Pittsburgh, PA (United States)

1993-04-01

Surface radiation damage in planar processed silicon detectors is caused by radiation generated holes being trapped in the silicon dioxide layers on the detector wafer. We have studied charge trapping in thick (field) oxide layers on detector wafers by irradiating FOXFET biased strip detectors and MOS test capacitors. Special emphasis was put on studying how a negative bias voltage across the oxide during irradiation affects hole trapping. In addition to FOXFET biased detectors, negatively biased field oxide layers may exist on the n-side of double-sided strip detectors with field plate based n-strip separation. The results indicate that charge trapping occurred both close to the Si-SiO[sub 2] interface and in the bulk of the oxide. The charge trapped in the bulk was found to modify the electric field in the oxide in a way that leads to saturation in the amount of charge trapped in the bulk when the flatband/threshold voltage shift equals the voltage applied over the oxide during irradiation. After irradiation only charge trapped close to the interface is annealed by electrons tunneling to the oxide from the n-type bulk. (orig.).

Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

Science.gov (United States)

García, H.; Castán, H.; Dueñas, S.; García-Hemme, E.; García-Hernansaz, R.; Montero, D.; González-Díaz, G.

2018-03-01

Intermediate-band semiconductors have attracted much attention for use in silicon-based solar cells and infrared detectors. In this work, n-Si substrates have been implanted with very high doses (1013 cm-2 and 1014 cm-2) of vanadium, which gives rise to a supersaturated layer inside the semiconductor. However, the Mott limit was not exceeded. The energy levels created in the supersaturated silicon were studied in detail by means of thermal admittance spectroscopy. We found a single deep center at energy near E C - 200 meV. This value agrees with one of the levels found for vanadium in silicon. The capture cross-section values of the deep levels were also calculated, and we found a relationship between the capture cross-section and the energy position of the deep levels which follows the Meyer-Neldel rule. This process usually appears in processes involving multiple excitations. The Meyer-Neldel energy values agree with those previously obtained for silicon supersaturated with titanium and for silicon contaminated with iron.

Hydration effects on the molecular structure of silica-supported vanadium oxide catalysts: A combined IR, Raman, UV–vis and EXAFS study

NARCIS (Netherlands)

Keller, D.E.; Visser, T.; Soulimani, F.; Koningsberger, D.C.; Weckhuysen, B.M.

2007-01-01

The effect of hydration on the molecular structure of silica-supported vanadium oxide catalysts with loadings of 1–16 wt.% V has been systematically investigated by infrared, Raman, UV–vis and EXAFS spectroscopy. IR and Raman spectra recorded during hydration revealed the formation of V–OH groups,

Oxidation-reduction phenomena in tabular uranium-vanadium bearing sandstone from the Salt Wash deposits (Upper Jurassic) of the Cottonwood Wash district (Utah, USA)

International Nuclear Information System (INIS)

Meunier, J.D.

1984-02-01

A braided to meandering fluvial environment has been postulated for this area after a sedimentological study. The mineralization is spatially related with conifer derived organic matter and wood is preserved in these sediments because of the reducing environment of deposition. The degree of maturation of the organic matter has been estimated from chemical analyses. Results show the presence of variable diagenetic oxidation depending on the environment. The organic matter which was least affected by this oxidation have attained a thermal maturation characteristic of the end stage of diagenesis. The high grade ore is situated at the edges of or within the trunks of trees (which remained permeable during diagenesis) and at the boundaries of the carbonaceous beds. Geochemical study shows there to be good correlation between uranium and vanadium. Uranium occurs as pitchblende, coffinite or as impregnations in the vanadiferous clay cement. A detailed study of clays shows an association of chlorite and roscoelite which most probably contain V 3+ . Fluid inclusion study suggests burying temperatures of >= 100 0 C and shows the existance of brines before the mineralization. The following genetical model is proposed. Low Eh uraniferous solutions move through a reduced pyritised environment. The low degree of oxidation of the pyrites propagates the destabilization of the clastic iron-titanium oxides which release vanadium and the dissociation of uranylcarbonates. Then, the deposit of pitchblende, coffinite, montroseite and vanadiferous clays took place in association with a secondary pyrite. When the rocks were uplifted to the subsurface, uranium (IV) and vanadium (III) were remobilised in an oxidising environment to form a secondary mineralization essentially represented by tyuyamunite [fr

Insulin and vanadium protect against osteoarthritis development secondary to diabetes mellitus in rats.

Science.gov (United States)

El Karib, Abbas O; Al-Ani, Bahjat; Al-Hashem, Fahaid; Dallak, Mohammad; Bin-Jaliah, Ismaeel; El-Gamal, Basiouny; Bashir, Salah O; Eid, Refaat A; Haidara, Mohamed A

2016-07-01

Diabetic complications such as cardiovascular disease and osteoarthritis (OA) are among the common public health problems. The effect of insulin on OA secondary to diabetes has not been investigated before in animal models. Therefore, we sought to determine whether insulin and the insulin-mimicking agent, vanadium can protect from developing OA in diabetic rats. Type 1 diabetes mellitus (T1DM) was induced in Sprague-Dawley rats and treated with insulin and/or vanadium. Tissues harvested from the articular cartilage of the knee joint were examined by scanning electron microscopy, and blood samples were assayed for oxidative stress and inflammatory biomarkers. Eight weeks following the induction of diabetes, a profound damage to the knee joint compared to the control non-diabetic group was observed. Treatment of diabetic rats with insulin and/or vanadium differentially protected from diabetes-induced cartilage damage and deteriorated fibrils of collagen fibers. The relative biological potencies were insulin + vanadium > insulin > vanadium. Furthermore, there was about 2- to 5-fold increase in TNF-α (from 31.02 ± 1.92 to 60.5 ± 1.18 pg/ml, p 1) and IL-6 (from 64.67 ± 8.16 to 338.0 ± 38.9 pg/ml, p 1) cytokines and free radicals measured as TBARS (from 3.21 ± 0.37 to 11.48 ± 1.5 µM, p 1) in the diabetic group, which was significantly reduced with insulin and or vanadium. Meanwhile, SOD decreased (from 17.79 ± 8.9 to 8.250.29, p 1) and was increased with insulin and vanadium. The relative potencies of the treating agents on inflammatory and oxidative stress biomarkers were insulin + vanadium > insulin > vanadium. The present study demonstrates that co-administration of insulin and vanadium to T1DM rats protect against diabetes-induced OA possibly by lowering biomarkers of inflammation and oxidative stress.

Study of the processes of carbonization and oxidation of porous silicon by Raman and IR spectroscopy

International Nuclear Information System (INIS)

Vasin, A. V.; Okholin, P. N.; Verovsky, I. N.; Nazarov, A. N.; Lysenko, V. S.; Kholostov, K. I.; Bondarenko, V. P.; Ishikawa, Y.

2011-01-01

Porous silicon layers were produced by electrochemical etching of single-crystal silicon wafers with the resistivity 10 Ω cm in the aqueous-alcohol solution of hydrofluoric acid. Raman spectroscopy and infrared absorption spectroscopy are used to study the processes of interaction of porous silicon with undiluted acetylene at low temperatures and the processes of oxidation of carbonized porous silicon by water vapors. It is established that, even at the temperature 550°C, the silicon-carbon bonds are formed at the pore surface and the graphite-like carbon condensate emerges. It is shown that the carbon condensate inhibits oxidation of porous silicon by water vapors and contributes to quenching of white photoluminescence in the oxidized carbonized porous silicon nanocomposite layer.

Determination of Vanadium Binding Mode on Seawater-Contacted Polyamidoxime Adsorbents

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhicheng [Lawrence Berkeley National Laboratory (LBNL); Rao, Linfeng [Lawrence Berkeley National Laboratory (LBNL); Abney, Carter W. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Bryantsev, Vyacheslav [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Ivanov, Aleksandr [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-09-01

Adsorbents developed for the recovery of uranium from seawater display poor selectivity over other transition metals present in the ocean, with vanadium particularly problematic. To improve selectivity, an indispensable step is the positive identification of metal binding environments following actual seawater deployment. In this work we apply x-ray absorption fine structure (XAFS) spectroscopy to directly investigate the vanadium binding environment on seawater-deployed polyamidoxime adsorbents. Comparison of the x-ray absorption near edge spectra (XANES) reveal marked similarities to recently a reported non-oxido vanadium (V) structure formed upon binding with cyclic imidedioxime, a byproduct of generating amidoxime functionalities. Density functional theory (DFT) calculations provided a series of putative vanadium binding environments for both vanadium (IV) and vanadium (V) oxidation states, and with both amidoxime and cyclic imidedioxime. Fits of the extended XAFS (EXAFS) data confirmed vanadium (V) is bound exclusively by the cyclic imidedioxime moiety in a 1:2 metal:ligand fashion, though a modest structural distortion is also observed compared to crystal structure data and computationally optimized geometries which is attributed to morphology effects from the polymer graft chain and the absence of crystal packing interactions. These results demonstrate that improved selectivity for uranium over vanadium can be achieved by suppressing the formation of cyclic imidedioxime during preparation of polyamidoxime adsorbents for seawater uranium recovery.

Complete resonance assignment for the polypeptide backbone of interleukin 1β using three-dimensional heteronuclear NMR spectroscopy

International Nuclear Information System (INIS)

Driscoll, P.C.; Clore, G.M.; Marion, D.; Gronenborn, A.M.; Wingfield, P.T.

1990-01-01

The complete sequence-specific assignment of the 15 N and 1 H backbone resonances of the NMR spectrum of recombinant human interleukin 1β has been obtained by using primarily 15 N- 1 H heteronuclear three-dimensional (3D) NMR techniques in combination with 15 N- 1 H heteronuclear and 1 H homonuclear two-dimensional NMR. The fingerprint region of the spectrum was analyzed by using a combination of 3D heteronuclear 1 H Hartmann-Hahn 15 N- 1 H multiple quantum coherence (3D HOHAHA-HMQC) and 3D heteronuclear 1 H nuclear Overhauser 15 N- 1 H multiple quantum coherence (3D NOESY-HMQC) spectroscopies. The authors show that the problems of amide NH and C α H chemical shift degeneracy that are prevalent for proteins of the size are readily overcome by using the 3D heteronuclear NMR technique. A doubling of some peaks in the spectrum was found to be due to N-terminal heterogeneity of the 15 N-labeled protein, corresponding to a mixture of wild-type and des-Ala-1-interleukin 1β. The complete list of 15 N and 1 H assignments is given for all the amide NH and C α H resonances of all non-proline residues, as well as the 1 H assignments for some of the amino acid side chains. This first example of the sequence-specific assignment of a protein using heteronuclear 3D NMR provides a basis for further conformational and dynamic studies of interleukin 1β

Pumping vortex into a Bose-Einstein condensate of heteronuclear molecules

International Nuclear Information System (INIS)

Xu, Z F; Wang, R Q; You, L

2009-01-01

Heteronuclear molecules have attracted wide attention due to their permanent electric dipole moments. Analogous to atoms with magnetic dipoles, the existence of nonzero electric dipoles significantly enhances the possibilities and mechanisms for the control and design of quantum degenerate molecule systems with electric (E) fields. This work proposes a vortex creation mechanism inside a condensate of heteronuclear molecules through the adiabatic flipping of the axial bias of an analogous E-field Ioffe-Pritchard trap (IPT), extending the original protocol of Isoshima et al (2000 Phys. Rev. A 61 063610) for an atomic spinor condensate inside a magnetic (B)-field IPT. We provide both analytic proof and numerical simulations to illustrate the high fidelity operation of this vortex pump protocol. We hope our work provides stimulating experimental possibilities for active investigations in quantum degenerate molecule systems.

Highly Efficient Gas-Phase Oxidation of Renewable Furfural to Maleic Anhydride over Plate Vanadium Phosphorus Oxide Catalyst.

Science.gov (United States)

Li, Xiukai; Ko, Jogie; Zhang, Yugen

2018-02-09

Maleic anhydride (MAnh) and its acids are critical intermediates in chemical industry. The synthesis of maleic anhydride from renewable furfural is one of the most sought after processes in the field of sustainable chemistry. In this study, a plate vanadium phosphorus oxide (VPO) catalyst synthesized by a hydrothermal method with glucose as a green reducing agent catalyzes furfural oxidation to MAnh in the gas phase. The plate catalyst-denoted as VPO HT -has a preferentially exposed (200) crystal plane and exhibited dramatically enhanced activity, selectivity and stability as compared to conventional VPO catalysts and other state-of-the-art catalytic systems. At 360 °C reaction temperature with air as an oxidant, about 90 % yield of MAnh was obtained at 10 vol % of furfural in the feed, a furfural concentration value that is much higher than those (<2 vol %) reported for other catalytic systems. The catalyst showed good long-term stability and there was no decrease in activity or selectivity for MAnh during the time-on-stream of 25 h. The high efficiency and catalyst stability indicate the great potential of this system for the synthesis of maleic anhydride from renewable furfural. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of Transition Metal Oxide/Silicon Heterojunctions for Solar Cell Applications

Directory of Open Access Journals (Sweden)

Luis G. Gerling

2015-10-01

Full Text Available During the last decade, transition metal oxides have been actively investigated as hole- and electron-selective materials in organic electronics due to their low-cost processing. In this study, four transition metal oxides (V2O5, MoO3, WO3, and ReO3 with high work functions (>5 eV were thermally evaporated as front p-type contacts in planar n-type crystalline silicon heterojunction solar cells. The concentration of oxygen vacancies in MoO3−x was found to be dependent on film thickness and redox conditions, as determined by X-ray Photoelectron Spectroscopy. Transfer length method measurements of oxide films deposited on glass yielded high sheet resistances (~109 Ω/sq, although lower values (~104 Ω/sq were measured for oxides deposited on silicon, indicating the presence of an inversion (hole rich layer. Of the four oxide/silicon solar cells, ReO3 was found to be unstable upon air exposure, while V2O5 achieved the highest open-circuit voltage (593 mV and conversion efficiency (12.7%, followed by MoO3 (581 mV, 12.6% and WO3 (570 mV, 11.8%. A short-circuit current gain of ~0.5 mA/cm2 was obtained when compared to a reference amorphous silicon contact, as expected from a wider energy bandgap. Overall, these results support the viability of a simplified solar cell design, processed at low temperature and without dopants.

Recovery of vanadium (V) from used catalysts in sulfuric acid production units by oxalic acid

International Nuclear Information System (INIS)

Abdulbaki, M.; Shino, O.

2009-07-01

Vanadium penta oxide (V 2 O 5 ), is used, in large quantities as a catalyst for the oxidation of SO 2 to SO 3 in sulfuric acid production units, during the oxidation process the level of the oxidation declines with the time because of catalyst poisoning. So the spent catalyst is usually through out in a specified special places by General Fertilizer Company which causes a pollution of the land. The present paper, studies the recovery of vanadium from the spent catalyst by using the oxalic acid. The optimal conditions of spent catalyst leaching have been studied. It has been shown that 2%(w/w) of oxalic acid is the most suitable for leaching process at 70 degree centigrade. The precipitation of vanadium using some alkaline media NH 4 OH has been also studied, it has been shown that ammonium hydroxide was the best at 50 degree centigrade. (author)

Photochemical deposition of NiCoO x thin films from Ni/Co heteronuclear triketonate complexes

International Nuclear Information System (INIS)

Buono-Core, G.E.; Tejos, M.; Cabello, G.; Guzman, N.; Hill, R.H.

2006-01-01

UV light irradiation of thin films of a polyketonate Ni/Co heteronuclear complex, NiCo(DBA) 2 [DBA, dibenzoylacetone)], spin coated on Si(1 0 0) substrates produced NiCoO x mixed oxides as amorphous films. On annealing at 600 deg. C under air, the mixed oxide film decomposed to NiO and CoO as indicated by XRD measurements. The morphology of the as-deposited films was examined by AFM analysis showing a smooth surface with low rms roughness values. The ratio of Ni/Co (1.08) present in the film reflects the stoichiometry in the starting compound within the experimental error, as shown by XPS analysis. The large amount of carbon (20.8%) detected on the surface of the film may be due to the presence of phenyl rings in the precursor complex

Designing high performance precursors for atomic layer deposition of silicon oxide

Energy Technology Data Exchange (ETDEWEB)

Mallikarjunan, Anupama, E-mail: mallika@airproducts.com; Chandra, Haripin; Xiao, Manchao; Lei, Xinjian; Pearlstein, Ronald M.; Bowen, Heather R.; O' Neill, Mark L. [Air Products and Chemicals, Inc., 1969 Palomar Oaks Way, Carlsbad, California 92011 (United States); Derecskei-Kovacs, Agnes [Air Products and Chemicals, Inc., 7201 Hamilton Blvd., Allentown, Pennsylvania 18195 (United States); Han, Bing [Air Products and Chemicals, Inc., 2 Dongsanhuan North Road, Chaoyang District, Beijing 100027 (China)

2015-01-15

Conformal and continuous silicon oxide films produced by atomic layer deposition (ALD) are enabling novel processing schemes and integrated device structures. The increasing drive toward lower temperature processing requires new precursors with even higher reactivity. The aminosilane family of precursors has advantages due to their reactive nature and relative ease of use. In this paper, the authors present the experimental results that reveal the uniqueness of the monoaminosilane structure [(R{sub 2}N)SiH{sub 3}] in providing ultralow temperature silicon oxide depositions. Disubstituted aminosilanes with primary amines such as in bis(t-butylamino)silane and with secondary amines such as in bis(diethylamino)silane were compared with a representative monoaminosilane: di-sec-butylaminosilane (DSBAS). DSBAS showed the highest growth per cycle in both thermal and plasma enhanced ALD. These findings show the importance of the arrangement of the precursor's organic groups in an ALD silicon oxide process.

Rutile vanadium antimonates. A new class of catalysts for selective reduction of NO with ammonia

Energy Technology Data Exchange (ETDEWEB)

Brazdil, James F.; Ebner, Ann M.; Cavalcanti, Fernando A.P. [BP Chemicals Inc., Cleveland, OH (United States)

1997-12-31

This paper describes a new class of vanadium containing oxide catalysts that are active and selective for the selective catalytic reduction of NO with ammonia. Vanadium antimony oxide based catalysts were found to be effective in the conversion of NO with little or no ammonia slippage when tested using gas mixtures containing between 300 and 700ppm NO. X-ray diffraction analyses of the catalysts show that the dominant phase present in the catalyst is vanadium antimonate having a defect rutile crystal structure. The catalysts are active and selective in the ranges of 400-460C and gas hourly space velocities of 3000-8000h{sup -1}

Application of vanadium alloys to a fusion reactor blanket

Energy Technology Data Exchange (ETDEWEB)

Bethin, J.; Tobin, A. (Grumman Aerospace Corp., Bethpage, NY (USA). Research and Development Center)

1984-05-01

Vanadium and vanadium alloys are of interest in fusion reactor blanket applications due to their low induced radioactivity and outstanding elevated temperature mechanical properties during neutron irradiation. The major limitation to the use of vanadium is its sensitivity to oxygen impurities in the blanket environment, leading to oxygen embrittlement. A quantitative analysis was performed of the interaction of gaseous impurities in a helium coolant with vanadium and the V-15Cr-5Ti alloy under conditions expected in a fusion reactor blanket. It was shown that the use of unalloyed V would impose severe restrictions on the helium gas cleanup system due to excessive oxygen buildup and embrittlement of the metal. However, internal oxidation effects and the possibly lower terminal oxygen solubility in the alloy would impose much less severe cleanup constraints. It is suggested that V-15Cr-5Ti is a promising candidate for certain blanket applications and deserves further consideration.

Graphene/vanadium oxide nanotubes composite as electrode material for electrochemical capacitors

International Nuclear Information System (INIS)

Fu, Meimei; Ge, Chongyong; Hou, Zhaohui; Cao, Jianguo; He, Binhong; Zeng, Fanyan; Kuang, Yafei

2013-01-01

Graphene/vanadium oxide nanotubes (VOx-NTs) composite was successfully synthesized through the hydrothermal process in which acetone as solvent and 1-hexadecylamine (HDA) as structure-directing template were used. Morphology, structure and composition of the as-obtained composite were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, nitrogen isothermal adsorption/desorption and thermo gravimetric analysis (TGA). The composite with the VOx-NTs amount of 69.0 wt% can deliver a specific capacitance of 210 F/g at a current density of 1 A/g in 1 M Na 2 SO 4 aqueous solution, which is nearly twice as that of pristine graphene (128 F/g) or VOx-NTs (127 F/g), and exhibit a good performance rate. Compared with pure VOx-NTs, the cycle stability of the composite was also greatly improved due to the enhanced conductivity of the electrode and the structure buffer role of graphene

High aspect ratio silicon nanomoulds for UV embossing fabricated by directional thermal oxidation using an oxidation mask

International Nuclear Information System (INIS)

Chen, L Q; Chan-Park, Mary B; Yan, Y H; Zhang Qing; Li, C M; Zhang Jun

2007-01-01

Nanomoulding is simple and economical but moulds with nanoscale features are usually prohibitively expensive to fabricate because nanolithographic techniques are mostly serial and time-consuming for large-area patterning. This paper describes a novel, simple and inexpensive parallel technique for fabricating nanoscale pattern moulds by silicon etching followed by thermal oxidation. The mask pattern can be made by direct photolithography or photolithography followed by metal overetching for submicron- and nanoscale features, respectively. To successfully make nanoscale channels having a post-oxidation cross-sectional shape similar to that of the original channel, an oxidation mask to promote unidirectional (specifically horizontal) oxide growth is found to be essential. A silicon nitride or metal mask layer prevents vertical oxidation of the Si directly beneath it. Without this mask, rectangular channels become smaller but are V-shaped after oxidation. By controlling the silicon etch depth and oxidation time, moulds with high aspect ratio channels having widths ranging from 500 to 50 nm and smaller can be obtained. The nanomould, when passivated with a Teflon-like layer, can be used for first-generation replication using ultraviolet (UV) nanoembossing and second-generation replication in other materials, such as polydimethylsiloxane (PDMS). The PDMS stamp, which was subsequently coated with Au, was used for transfer printing of Au electrodes with a 600 nm gap which will find applications in plastics nanoelectronics

Thermal desorption of toluene from Vanadium-containing catalysts coated onto various carriers

Directory of Open Access Journals (Sweden)

Z. Zheksenbaeva

2012-12-01

Full Text Available The method temperature-programmed desorption has been studied the state of toluene on the surface-modified vanadium catalysts on different carriers. Among the investigated carriers the most active in the reaction of partial oxidation of toluene is anatase structural titanium dioxide. For the partial oxidation of toluene on modified vanadium-containing catalysts deposited on TiO2 was tested. It was found that on the catalyst 20%V2O5-5%MoO3-2%Sb2O3/TiO2 at a temperature of 673K, volume rate of 15 thousand hours-1 oxidation of toluene is 80% c yield of benzoic acid with a selectivity of  70% of 87.5%.

Experimental investigation of new low-dimensional spin systems in vanadium oxides

International Nuclear Information System (INIS)

Kaul, E.E.

2005-01-01

In this dissertation we reported our experimental investigation of the magnetic properties of nine low-dimensional vanadium compounds. Two of these materials are completely new (Pb 2 V 5 O 12 and Pb 2 VO(PO 4 ) 2 ) and were found during our search for new low-dimensional vanadium oxides. Among the other seven vanadium compounds studied, three were physically investigated for the first time (Sr 2 VO(PO 4 ) 2 , BaZnVO(PO 4 ) 2 and SrZnVO(PO 4 ) 2 ). Two had hitherto only preliminary, and wrongly interpreted, susceptibility measurements reported in the literature (Sr 2 V 3 O 9 and Ba 2 V 3 O 9 ) while the remaining two (Li 2 VOSiO 4 and Li 2 VOGeO 4 ) were previously investigated in some detail but the interpretation of the data was controversial. We investigated the magnetic properties of these materials by means of magnetic susceptibility and specific heat (C p (T)) measurements (as well as single crystal ESR measurements in the case of Sr 2 V 3 O 9 ). We synthesized the samples necessary for our physical studies. That required a search of the optimal synthesis conditions for obtaining pure, high quality, polycrystalline samples. Single crystals of Sr 2 V 3 O 9 and Pb 2 VO(PO 4 ) 2 were also successfully grown. Pb 2 VO(PO 4 ) 2 , BaZnVO(PO 4 ) 2 , SrZnVO(PO 4 ) 2 , Li 2 VOSiO 4 and Li 2 VOGeO 4 were found to be experimental examples of frustrated square-lattice systems which are described by theJ 1 -J 2 model. We found that Li 2 VOSiO 4 and Li 2 VOGeO 4 posses a weakly frustrated antiferromagnetic square lattice while Pb 2 VO(PO 4 ) 2 , BaZnVO(PO 4 ) 2 and SrZnVO(PO 4 ) 2 form a more strongly frustrated ferromagnetic square lattice. Pb 2 V 5 O 12 is structurally and compositionally related to the two dimensional A 2+ V 4+ n O 2n+1 vanadates. Its structure consists of layers formed by edge- and corner-shared square VO 5 pyramids. The basic structural units are plaquettes consisting of six corner-shared pyramids pointing in the same direction, which form a spin

APS- and XPS-investigations of vanadium, vanadium carbide and graphite

Energy Technology Data Exchange (ETDEWEB)

Bradshaw, A M; Krause, U [Technische Univ. Muenchen (F.R. Germany). Inst. fuer Physikalische Chemie und Theoretische Chemie

1975-11-01

Soft X-ray appearance potential spectroscopy (APS) and X-ray photoelectron spectroscopy (XPS) have been used to study vanadium, vanadium carbide, and graphite. The chemical shifts for vanadium carbide with respect to metallic vanadium and graphite are compared for the two methods. The Csub(K) structure in APS and the valence band in XPS for vanadium carbide show good agreement with the band structure calculations of Neckel and co-workers. Using the band structure calculations of Painter et al. it is also shown how the multi-peak structure in the APS spectrum of graphite is possibly due to density of states effects. It would therefore appear that plasmon coupling plays only a minor role.

The role of oxide interlayers in back reflector configurations for amorphous silicon solar cells

NARCIS (Netherlands)

Demontis, V.; Sanna, C.; Melskens, J.; Santbergen, R.; Smets, A.H.M.; Damiano, A.; Zeman, M.

2013-01-01

Thin oxide interlayers are commonly added to the back reflector of thin-film silicon solar cells to increase their current. To gain more insight in the enhancement mechanism, we tested different back reflector designs consisting of aluminium-doped zinc oxide (ZnO:Al) and/or hydrogenated silicon

Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

Energy Technology Data Exchange (ETDEWEB)

Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

2017-01-15

The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

Nanopatterning of Crystalline Silicon Using Anodized Aluminum Oxide Templates for Photovoltaics

Science.gov (United States)

Chao, Tsu-An

A novel thin film anodized aluminum oxide templating process was developed and applied to make nanopatterns on crystalline silicon to enhance the optical properties of silicon. The thin film anodized aluminum oxide was created to improve the conventional thick aluminum templating method with the aim for potential large scale fabrication. A unique two-step anodizing method was introduced to create high quality nanopatterns and it was demonstrated that this process is superior over the original one-step approach. Optical characterization of the nanopatterned silicon showed up to 10% reduction in reflection in the short wavelength range. Scanning electron microscopy was also used to analyze the nanopatterned surface structure and it was found that interpore spacing and pore density can be tuned by changing the anodizing potential.

Intercalation compounds of vanadium pentoxide hydrated with metalporphyrins and lanthanide ions

International Nuclear Information System (INIS)

Oliveira, Herenilton Paulino

1994-01-01

The lamellar structure of the vanadium pentoxide matrix allows the intercalation of organic molecules, ions and conductor polymers. It is important to emphasize that the vanadium oxide matrix is an intrinsic semiconductor and presents electrochromic properties. In the beginning of this work the method of synthesis and the electrochemical and electrochromic properties were extensively explored. The effect of alkaline metal and lanthanide ions on the structure of vanadium oxide matrix was studied by X-ray and infrared spectroscopy. Moreover, the influence of those ions in the electrochemical, spectro electrochemical and magnetic properties were studied. Finally, some intercalation compounds containing porphyrins were prepared and characterized by elemental analysis, X-ray diffraction, and electronic, vibrational, Moessbauer and X-ray fluorescence spectroscopy. The electrochemical and spectro electrochemical properties were investigated. And the performance of an iron porphyrin based intercalation compound as catalyst for molecular oxygen reduction was evaluated using the rotating ring-disc electrode technique. (author)

Defects and defect generation in oxide layer of ion implanted silicon-silicon dioxide structures

CERN Document Server

Baraban, A P

2002-01-01

One studies mechanism of generation of defects in Si-SiO sub 2 structure oxide layer as a result of implantation of argon ions with 130 keV energy and 10 sup 1 sup 3 - 3.2 x 10 sup 1 sup 7 cm sup - sup 2 doses. Si-SiO sub 2 structures are produced by thermal oxidation of silicon under 950 deg C temperature. Investigations were based on electroluminescence technique and on measuring of high-frequency volt-farad characteristics. Increase of implantation dose was determined to result in spreading of luminosity centres and in its maximum shifting closer to boundary with silicon. Ion implantation was shown, as well, to result in increase of density of surface states at Si-SiO sub 2 interface. One proposed model of defect generation resulting from Ar ion implantation into Si-SiO sub 2

Effect of additive gases and injection methods on chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F2 remote plasmas

International Nuclear Information System (INIS)

Yun, Y. B.; Park, S. M.; Kim, D. J.; Lee, N.-E.; Kim, K. S.; Bae, G. H.

2007-01-01

The authors investigated the effects of various additive gases and different injection methods on the chemical dry etching of silicon nitride, silicon oxynitride, and silicon oxide layers in F 2 remote plasmas. N 2 and N 2 +O 2 gases in the F 2 /Ar/N 2 and F 2 /Ar/N 2 /O 2 remote plasmas effectively increased the etch rate of the layers. The addition of direct-injected NO gas increased the etch rates most significantly. NO radicals generated by the addition of N 2 and N 2 +O 2 or direct-injected NO molecules contributed to the effective removal of nitrogen and oxygen in the silicon nitride and oxide layers, by forming N 2 O and NO 2 by-products, respectively, and thereby enhancing SiF 4 formation. As a result of the effective removal of the oxygen, nitrogen, and silicon atoms in the layers, the chemical dry etch rates were enhanced significantly. The process regime for the etch rate enhancement of the layers was extended at elevated temperature

Influence of titanium and vanadium on the hydrogen transport through amorphous alumina films

Energy Technology Data Exchange (ETDEWEB)

Palsson, G.K. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Wang, Y.T. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Azofeifa, D. [Centro de Investigacion en Ciencia e Ingenieria de Materiales and Escuela de Fisica, Universidad de Costa Rica, San Jose (Costa Rica); Raanaei, H. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden); Department of Physics, Persian Gulf University, Bushehr 75168 (Iran, Islamic Republic of); Sahlberg, M. [Department of Materials Chemistry, Uppsala University, Box 538, S-751 21 Uppsala (Sweden); Hjoervarsson, B. [Department of Physics, Uppsala University, Box 530, S-751 21 Uppsala (Sweden)

2010-04-02

The influence of titanium and vanadium on the hydrogen transport rate through thin amorphous alumina films is addressed. Only small changes in the transport rate are observed when the Al{sub 2}O{sub 3} are covered with titanium or vanadium. This is in stark contrast to results with a Pd overlayer, which enhances the transport by an order of magnitude. Similarly, when titanium is embedded into the alumina the transport rate is faster than for the covered case but still slower than the undoped reference. Embedding vanadium in the alumina does not yield an increase in uptake rate compared to the vanadium covered oxide layers. These results add to the understanding of the hydrogen uptake of oxidized metals, especially the alanates, where the addition of titanium has been found to significantly enhance the rate of hydrogen uptake. The current findings eliminate two possible routes for the catalysis of alanates by Ti, namely dissociation and effective diffusion short-cuts formed by Ti. Finally, no photocatalytic enhancement was noticed on the titanium covered samples.

Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

International Nuclear Information System (INIS)

Pichon, L; Rogel, R; Demami, F

2010-01-01

We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

Electrodeposition of Vanadium Oxides at Room Temperature as Cathodes in Lithium-Ion Batteries

Directory of Open Access Journals (Sweden)

Michalis Rasoulis

2017-07-01

Full Text Available Electrodeposition of vanadium pentoxide coatings was performed at room temperature and a short growth period of 15 min based on an alkaline solution of methanol and vanadyl (III acetyl acetonate. All samples were characterized by X-ray diffraction, Raman spectroscopy, field-emission scanning electron microscopy, cyclic voltammetry, and electrochemical impedance spectroscopy. The current density and electrolyte concentration were found to affect the characteristics of the as-grown coatings presenting enhanced crystallinity and porous structure at the highest values employed in both cases. The as-grown vanadium pentoxide at current density of 1.3 mA·cm−2 and electrolyte concentration of 0.5 M indicated the easiest charge transfer of Li+ across the vanadium pentoxide/electrolyte interface presenting a specific discharge capacity of 417 mAh·g−1, excellent capacitance retention of 95%, and coulombic efficiency of 94% after 1000 continuous Li+ intercalation/deintercalation scans. One may then suggest that this route is promising to prepare large area vanadium pentoxide electrodes with excellent stability and efficiency at very mild conditions.

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

Science.gov (United States)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

PSYCHE CPMG-HSQMBC: An NMR Spectroscopic Method for Precise and Simple Measurement of Long-Range Heteronuclear Coupling Constants.

Science.gov (United States)

Timári, István; Szilágyi, László; Kövér, Katalin E

2015-09-28

Among the NMR spectroscopic parameters, long-range heteronuclear coupling constants convey invaluable information on torsion angles relevant to glycosidic linkages of carbohydrates. A broadband homonuclear decoupled PSYCHE CPMG-HSQMBC method for the precise and direct measurement of multiple-bond heteronuclear couplings is presented. The PSYCHE scheme built into the pulse sequence efficiently eliminates unwanted proton-proton splittings from the heteronuclear multiplets so that the desired heteronuclear couplings can be determined simply by measuring frequency differences between peak maxima of pure antiphase doublets. Moreover, PSYCHE CPMG-HSQMBC can provide significant improvement in sensitivity as compared to an earlier Zangger-Sterk-based method. Applications of the proposed pulse sequence are demonstrated for the extraction of (n)J((1)H,(77)Se) and (n)J((1)H,(13)C) values, respectively, in carbohydrates; further extensions can be envisioned in any J-based structural and conformational studies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laser direct writing of oxide structures on hydrogen-passivated silicon surfaces

DEFF Research Database (Denmark)

Müllenborn, Matthias; Birkelund, Karen; Grey, Francois

1996-01-01

on amorphous and crystalline silicon surfaces in order to determine the depassivation mechanism. The minimum linewidth achieved is about 450 nm using writing speeds of up to 100 mm/s. The process is fully compatible with local oxidation of silicon by scanning probe lithography. Wafer-scale patterns can...

Graphene/vanadium oxide nanotubes composite as electrode material for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Fu, Meimei [College of Chemistry, Xiangtan University, Xiangtan 411005 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Ge, Chongyong [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Hou, Zhaohui, E-mail: zhqh96@163.com [College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Cao, Jianguo [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); He, Binhong [College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Zeng, Fanyan [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China); College of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang 414006 (China); Kuang, Yafei, E-mail: yafeik@163.com [College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082 (China)

2013-07-15

Graphene/vanadium oxide nanotubes (VOx-NTs) composite was successfully synthesized through the hydrothermal process in which acetone as solvent and 1-hexadecylamine (HDA) as structure-directing template were used. Morphology, structure and composition of the as-obtained composite were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, nitrogen isothermal adsorption/desorption and thermo gravimetric analysis (TGA). The composite with the VOx-NTs amount of 69.0 wt% can deliver a specific capacitance of 210 F/g at a current density of 1 A/g in 1 M Na{sub 2}SO{sub 4} aqueous solution, which is nearly twice as that of pristine graphene (128 F/g) or VOx-NTs (127 F/g), and exhibit a good performance rate. Compared with pure VOx-NTs, the cycle stability of the composite was also greatly improved due to the enhanced conductivity of the electrode and the structure buffer role of graphene.

Vanadium - 1977

International Nuclear Information System (INIS)

Broderick, G.N.

1977-01-01

This report, with pertinent references, is a comprehensive description and analysis of the vanadium industry. Included is information on industry structure, size and organization; definitions, grades, and specifications; reserves and resources; geology; production and capacity; uses; technology; byproducts and coproducts; strategic considerations; economic and operating factors and problems; supply-demand relationships; and forecasts of supply and demand. Vanadium is used principally as an alloy in steel. Other important uses are in titanium alloys and in various chemical catalytic processes. The world supply of vanadium is sufficient to last far beyond the year 2000 at the present and projected rates of consumption. Almost all of the resources will economically yield vanadium only in conjunction with a coproduct

The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon

International Nuclear Information System (INIS)

Bulakh, B. M.; Korsunska, N. E.; Khomenkova, L. Yu.; Staraya, T. R.; Sheinkman, M. K.

2006-01-01

The photoluminescence spectra of porous silicon and their temperature dependences and transformations on aging are studied. It is shown that the infrared band prevailing in the spectra of as-prepared samples is due to exciton recombination in silicon crystallites. On aging, a well-pronounced additional band is observed at shorter wavelengths of the spectra. It is assumed that this band is due to the recombination of carriers that are excited in silicon crystallites and recombine via some centers located in oxide. It is shown that the broad band commonly observable in oxidized porous silicon is a superposition of the above two bands. The dependences of the peak positions and integrated intensities of the bands on time and temperature are studied. The data on the distribution of oxide centers with depth in the porous layer are obtained

Microstructure and oxidative degradation behavior of silicon carbide fiber Hi-Nicalon type S

International Nuclear Information System (INIS)

Takeda, M.; Urano, A.; Sakamoto, J.; Imai, Y.

1998-01-01

Polycarbosilane-derived SiC fibers, Nicalon, Hi-Nicalon, and Hi-Nicalon type S were exposed for 1 to 100 h at 1273-1773 K in air. Oxide layer growth and tensile strength change of these fibers were examined after the oxidation test. As a result, three types of SiC fibers decreased their strength as oxide layer thickness increased. Fracture origins were determined at near the oxide layer-fiber interface. Adhered fibers arised from softening of silicon oxide at high temperature were also observed. In this study, Hi-Nicalon type S showed better oxidation resistance than other polycarbosilane-derived SiC fibers after 1673 K or higher temperature exposure in air for 10 h. This result was explained by the poreless silicon oxide layer structure of Hi-Nicalon type S. (orig.)

Determination of micro amounts of vanadium by oxidative coupling of α-naphthol and p-phenylenediamine

International Nuclear Information System (INIS)

Hainberger, S.J.; Damasceno, R.N.

1975-01-01

A sensitive determination of vanadium is described. In the presence of the necessary amount of potassium chlorate and small amounts of vanadium, α-naphthol and p-phenylenediamine react to yield a dyestuff, which exhibits an absorption maximum at 345 nm. The Lambert-Beer law is followed at 0.008-0.12 μg vanadium per ml. The molar extinction amounts to 54 x 10 4 .mol -1 The removal of the interfering cations is described. (author)

The determination of vanadium in brines by atomic absorption spectroscopy

Science.gov (United States)

Crump-Wiesner, Hans J.; Feltz, H.R.; Purdy, W.C.

1971-01-01

A standard addition method is described for the determination of vanadium in brines by atomic absorption spectroscopy with a nitrous oxide-acetylene flame. Sample pH is adjusted to 1.0 with concentrated hydrochloric acid and the vanadium is directly extracted with 5% cupferron in methyl isobutyl ketone (MIBK). The ketone layer is then aspirated into the flame and the recorded absorption values are plotted as a function of the concentration of the added metal. As little as 2.5 ??g l-1 of vanadium can be detected under the conditions of the procedure. Tungsten and tin interfere when present in excess of 5 and 10 ??g ml-1, respectively. The concentrations of the two interfering ions normally found in brines are well below interference levels. ?? 1971.

Effects of gamma irradiations on reactive pulsed laser deposited vanadium dioxide thin films

Energy Technology Data Exchange (ETDEWEB)

Madiba, I.G., E-mail: madibagiven@gmail.com [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); Empa, Swiss Federal Laboratories Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Émond, N.; Chaker, M. [Institut National de la Recherche Scientifique (INRS),1650 Blvd. Lionel-Boulet, Varennes, Québec J3X1S2 (Canada); Thema, F.T. [UNESCO-UNISA Africa Chair in Nanosciences/Nanotechnology, College of Graduate Studies, University of South Africa (UNISA), Muckleneuk Ridge, P O Box 392, Pretoria (South Africa); iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); Tadadjeu, S.I. [iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); Department of Electrical, Electronics and Computer Engineering, French South African Institute of Technology/Cape Peninsula University of Technology, Bellville campus, PO Box 1906, Bellville, 7530 (South Africa); Muller, U.; Zolliker, P. [Empa, Swiss Federal Laboratories Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Braun, A. [ETH Zurich, Swiss Federal Institute of Technology, CH-8057, Zurich (Switzerland); Empa, Swiss Federal Laboratories Materials Science and Technology, CH-8600 Dübendorf (Switzerland); Kotsedi, L. [iThemba LABS-National Research Foundation, 1 Old Faure Road, Somerset West 7129, PO Box 722, Somerset West, Western Cape Province (South Africa); and others

2017-07-31

Highlights: • Synthesis of VO{sub 2} thin films by Reactive pulsed laser deposition has been achieved. • Properties VO{sub 2} remain mainly unaffected when subjected to gamma ray doses similar to those encountered during space missions. • The long range crystal structure of VO{sub 2} remains intact upon irradiation on different doses up to 100 kGy. • XPS reveals a shift from V{sup 4+} to V{sup 5+} oxidation state upon irradiation, due to the frenkel pair formation on the surface. • Irradiated films show the characteristic SMT of VO{sub 2}, although the electrical and optical properties are slightly affected. - Abstract: Vanadium oxide films are considered suitable coatings for various applications such as thermal protective coating of small spacecrafts because of their thermochromic properties. While in outer space, such coating will be exposed to cosmic radiations which include γ-rays. To study the effect of these γ-rays on the coating properties, we have deposited vanadium dioxide (VO{sub 2}) films on silicon substrates and subjected them to extensive γ-irradiations with typical doses encountered in space missions. The prevalent crystallographic phase after irradiation remains the monoclinic VO{sub 2} phase but the films preferential orientation shifts to lower angles due to the presence of disordered regions caused by radiations. Raman spectroscopy measurements also evidences that the VO{sub 2} structure is slightly affected by gamma irradiation. Indeed, increasing the gamma rays dose locally alters the crystalline and electronic structures of the films by modifying the V–V inter-dimer distance, which in turns favours the presence of the VO{sub 2} metallic phase. From the XPS measurements of V2p and O1s core level spectra, an oxidation of vanadium from V{sup 4+} towards V{sup 5+} is revealed. The data also reveal a hydroxylation upon irradiation which is corroborated by the vanishing of a low oxidation state peak near the Fermi energy in the

Study of an Amorphous Silicon Oxide Buffer Layer for p-Type Microcrystalline Silicon Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells and Their Temperature Dependence

Directory of Open Access Journals (Sweden)

Taweewat Krajangsang

2014-01-01

Full Text Available Intrinsic hydrogenated amorphous silicon oxide (i-a-SiO:H films were used as front and rear buffer layers in crystalline silicon heterojunction (c-Si-HJ solar cells. The surface passivity and effective lifetime of these i-a-SiO:H films on an n-type silicon wafer were improved by increasing the CO2/SiH4 ratios in the films. Using i-a-SiO:H as the front and rear buffer layers in c-Si-HJ solar cells was investigated. The front i-a-SiO:H buffer layer thickness and the CO2/SiH4 ratio influenced the open-circuit voltage (Voc, fill factor (FF, and temperature coefficient (TC of the c-Si-HJ solar cells. The highest total area efficiency obtained was 18.5% (Voc=700 mV, Jsc=33.5 mA/cm2, and FF=0.79. The TC normalized for this c-Si-HJ solar cell efficiency was −0.301%/°C.

LiBSi2: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels.

Science.gov (United States)

Zeilinger, Michael; van Wüllen, Leo; Benson, Daryn; Kranak, Verina F; Konar, Sumit; Fässler, Thomas F; Häussermann, Ulrich

2013-06-03

Silicon swallows up boron: The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi2 was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels (see picture). LiBSi2 is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts.

Leaching characteristics of vanadium in mine tailings and soils near a vanadium titanomagnetite mining site

Energy Technology Data Exchange (ETDEWEB)

Yang, Jinyan; Tang, Ya; Yang, Kai [College of Architecture and Environment, Sichuan University, Chengdu 610065 (China); Rouff, Ashaki A. [School of Earth and Environmental Sciences, Queens College City University of New York, 65-30 Kissena Boulevard, Flushing, NY 11367 (United States); Elzinga, Evert J. [Department of Earth and Environmental Sciences, Rutgers University, Newark, NJ (United States); Huang, Jen-How, E-mail: jen-how.huang@unibas.ch [Institute of Environmental Geosciences, University of Basel, CH-4056 Basel (Switzerland)

2014-01-15

Highlights: • Vanadium in the soil and mine tailings has low solubility. • The leachability of vanadium in the mine tailings is lower than in the soil. • Low risk of vanadium migrating from the soil and mine tailings into the surrounding environment. • Drought and rewetting increase vanadium release from the soil and mine tailings. • Soil leaching processes control vanadium transport in soils overlain with mine tailings. -- Abstract: A series of column leaching experiments were performed to understand the leaching behaviour and the potential environmental risk of vanadium in a Panzhihua soil and vanadium titanomagnetite mine tailings. Results from sequential extraction experiments indicated that the mobility of vanadium in both the soil and the mine tailings was low, with <1% of the total vanadium readily mobilised. Column experiments revealed that only <0.1% of vanadium in the soil and mine tailing was leachable. The vanadium concentrations in the soil leachates did not vary considerably, but decreased with the leachate volume in the mine tailing leachates. This suggests that there was a smaller pool of leachable vanadium in the mine tailings compared to that in the soil. Drought and rewetting increased the vanadium concentrations in the soil and mine tailing leachates from 20 μg L{sup −1} to 50–90 μg L{sup −1}, indicating the potential for high vanadium release following periods of drought. Experiments with soil columns overlain with 4, 8 and 20% volume mine tailings/volume soil exhibited very similar vanadium leaching behaviour. These results suggest that the transport of vanadium to the subsurface is controlled primarily by the leaching processes occurring in soils.

Heterogeneous catalysis in liquid-phase oxidation of olefin--2. Dependence of the structure of vanadium-chromium binary oxide catalyst for oxidation of cyclohexene on the method of preparation

Energy Technology Data Exchange (ETDEWEB)

Takehira, K; Hayakawa, T; Ishikawa, T

1978-01-01

Dependence of the structure of vanadium-chromium binary oxide catalyst for oxidation of cyclohexene on the method of preparation was studied in an extension of previous work by using three series of binary oxide catalysts, D, E, and F, which were prepared by coprecipitation from acidic, neutral, and alkaline media, respectively. The specific activity at 60/sup 0/C, 1 atm oxygen, and benzene solvent decreased in the order D > E > F, but all three series showed maximum activity at 90% chromium. The selectivity for epoxide also followed the order D > E > F, but the maximum selectivity occurred at 50% chromium for D, 75% for E, and 90% for F. Comparison of these results with X-ray diffraction and ESR spectral structural analysis of the various chromium(III) vanadate phases supported the previously proposed mechanism, with cyclohexene autoxidation initiated by free radical decomposition of cyclohexene hydroperoxide occurring on a different type of active site.

Effects of Basicity and MgO in Slag on the Behaviors of Smelting Vanadium Titanomagnetite in the Direct Reduction-Electric Furnace Process

Directory of Open Access Journals (Sweden)

Tao Jiang

2016-05-01

Full Text Available The effects of basicity and MgO content on reduction behavior and separation of iron and slag during smelting vanadium titanomagnetite by electric furnace were investigated. The reduction behaviors affect the separation of iron and slag in the direct reduction-electric furnace process. The recovery rates of Fe, V, and Ti grades in iron were analyzed to determine the effects of basicity and MgO content on the reduction of iron oxides, vanadium oxides, and titanium oxides. The chemical compositions of vanadium-bearing iron and main phases of titanium slag were detected by XRF and XRD, respectively. The results show that the higher level of basicity is beneficial to the reduction ofiron oxides and vanadium oxides, and titanium content dropped in molten iron with the increasing basicity. As the content of MgO increased, the recovery rate of Fe increased slightly but the recovery rate of V increased considerably. The grades of Ti in molten iron were at a low level without significant change when MgO content was below 11%, but increased as MgO content increased to 12.75%. The optimum conditions for smelting vanadium titanomagnetite were about 11.38% content of MgO and quaternary basicity was about 1.10. The product, vanadium-bearing iron, can be applied in the converter steelmaking process, and titanium slag containing 50.34% TiO2 can be used by the acid leaching method.

Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

KAUST Repository

Essig, Stephanie; Dré on, Julie; Rucavado, Esteban; Mews, Mathias; Koida, Takashi; Boccard, Mathieu; Werner, Jé ré mie; Geissbü hler, Jonas; Lö per, Philipp; Morales-Masis, Monica; Korte, Lars; De Wolf, Stefaan; Balllif, Christophe

2018-01-01

Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient

Formation of silicon carbide by laser ablation in graphene oxide-N-methyl-2-pyrrolidone suspension on silicon surface

Science.gov (United States)

Jaleh, Babak; Ghasemi, Samaneh; Torkamany, Mohammad Javad; Salehzadeh, Sadegh; Maleki, Farahnaz

2018-01-01

Laser ablation of a silicon wafer in graphene oxide-N-methyl-2-pyrrolidone (GO-NMP) suspension was carried out with a pulsed Nd:YAG laser (pulse duration = 250 ns, wavelength = 1064 nm). The surface of silicon wafer before and after laser ablation was studied using optical microscopy, scanning electron microscopy (SEM) and energy dispersive X-ray analysis (EDX). The results showed that the ablation of silicon surface in liquid by pulsed laser was done by the process of melt expulsion under the influence of the confined plasma-induced pressure or shock wave trapped between the silicon wafer and the liquid. The X-ray diffraction‌ (XRD) pattern of Si wafer after laser ablation showed that 4H-SiC layer is formed on its surface. The formation of the above layer was also confirmed by Raman spectroscopy, and X-ray photoelectron spectroscopy‌ (XPS), as well as EDX was utilized. The reflectance of samples decreased with increasing pulse energy. Therefore, the morphological alteration and the formation of SiC layer at high energy increase absorption intensity in the UV‌-vis regions. Theoretical calculations confirm that the formation of silicon carbide from graphene oxide and silicon wafer is considerably endothermic. Development of new methods for increasing the reflectance without causing harmful effects is still an important issue for crystalline Si solar cells. By using the method described in this paper, the optical properties of solar cells can be improved.

Density of oxidation-induced stacking faults in damaged silicon

NARCIS (Netherlands)

Kuper, F.G.; Hosson, J.Th.M. De; Verwey, J.F.

1986-01-01

A model for the relation between density and length of oxidation-induced stacking faults on damaged silicon surfaces is proposed, based on interactions of stacking faults with dislocations and neighboring stacking faults. The model agrees with experiments.

Tuning of structural, light emission and wetting properties of nanostructured copper oxide-porous silicon matrix formed on electrochemically etched copper-coated silicon substrates

Science.gov (United States)

Naddaf, M.

2017-01-01

Matrices of copper oxide-porous silicon nanostructures have been formed by electrochemical etching of copper-coated silicon surfaces in HF-based solution at different etching times (5-15 min). Micro-Raman, X-ray diffraction and X-ray photoelectron spectroscopy results show that the nature of copper oxide in the matrix changes from single-phase copper (I) oxide (Cu2O) to single-phase copper (II) oxide (CuO) on increasing the etching time. This is accompanied with important variation in the content of carbon, carbon hydrides, carbonyl compounds and silicon oxide in the matrix. The matrix formed at the low etching time (5 min) exhibits a single broad "blue" room-temperature photoluminescence (PL) band. On increasing the etching time, the intensity of this band decreases and a much stronger "red" PL band emerges in the PL spectra. The relative intensity of this band with respect to the "blue" band significantly increases on increasing the etching time. The "blue" and "red" PL bands are attributed to Cu2O and porous silicon of the matrix, respectively. In addition, the water contact angle measurements reveal that the hydrophobicity of the matrix surface can be tuned from hydrophobic to superhydrophobic state by controlling the etching time.

Room temperature NO2-sensing properties of porous silicon/tungsten oxide nanorods composite

International Nuclear Information System (INIS)

Wei, Yulong; Hu, Ming; Wang, Dengfeng; Zhang, Weiyi; Qin, Yuxiang

2015-01-01

Highlights: • Porous silicon/WO 3 nanorods composite is synthesized via hydrothermal method. • The morphology of WO 3 nanorods depends on the amount of oxalic acid (pH value). • The sensor can detect ppb level NO 2 at room temperature. - Abstract: One-dimensional single crystalline WO 3 nanorods have been successfully synthesized onto the porous silicon substrates by a seed-induced hydrothermal method. The controlled morphology of porous silicon/tungsten oxide nanorods composite was obtained by using oxalic acid as an organic inducer. The reaction was carried out at 180 °C for 2 h. The influence of oxalic acid (pH value) on the morphology of porous silicon/tungsten oxide nanorods composite was investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM). The NO 2 -sensing properties of the sensor based on porous silicon/tungsten oxide nanorods composite were investigated at different temperatures ranging from room temperature (∼25 °C) to 300 °C. At room temperature, the sensor behaved as a typical p-type semiconductor and exhibited high gas response, good repeatability and excellent selectivity characteristics toward NO 2 gas due to its high specific surface area, special structure, and large amounts of oxygen vacancies

Encapsulated Vanadium-Based Hybrids in Amorphous N-Doped Carbon Matrix as Anode Materials for Lithium-Ion Batteries.

Science.gov (United States)

Long, Bei; Balogun, Muhammad-Sadeeq; Luo, Lei; Luo, Yang; Qiu, Weitao; Song, Shuqin; Zhang, Lei; Tong, Yexiang

2017-11-01

Recently, researchers have made significant advancement in employing transition metal compound hybrids as anode material for lithium-ion batteries and developing simple preparation of these hybrids. To this end, this study reports a facile and scalable method for fabricating a vanadium oxide-nitride composite encapsulated in amorphous carbon matrix by simply mixing ammonium metavanadate and melamine as anode materials for lithium-ion batteries. By tuning the annealing temperature of the mixture, different hybrids of vanadium oxide-nitride compounds are synthesized. The electrode material prepared at 700 °C, i.e., VM-700, exhibits excellent cyclic stability retaining 92% of its reversible capacity after 200 cycles at a current density of 0.5 A g -1 and attractive rate performance (220 mAh g -1 ) under the current density of up to 2 A g -1 . The outstanding electrochemical properties can be attributed to the synergistic effect from heterojunction form by the vanadium compound hybrids, the improved ability of the excellent conductive carbon for electron transfer, and restraining the expansion and aggregation of vanadium oxide-nitride in cycling. These interesting findings will provide a reference for the preparation of transition metal oxide and nitride composites as well. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Characterization of vanadium-doped mesoporous titania and its adsorption of gaseous benzene

Energy Technology Data Exchange (ETDEWEB)

Nguyen-Phan, Thuy-Duong; Song, Myoung Bock; Yun, Hyunran; Kim, Eui Jung; Oh, Eun-Suok [School of Chemical Engineering and Bioengineering, University of Ulsan, Mugeo-dong, Nam-gu, Ulsan 680-749 (Korea, Republic of); Shin, Eun Woo, E-mail: ewshin@mail.ulsan.ac.kr [School of Chemical Engineering and Bioengineering, University of Ulsan, Mugeo-dong, Nam-gu, Ulsan 680-749 (Korea, Republic of)

2011-01-01

A series of vanadium-doped mesoporous titania with different metal contents was synthesized in the study via a sol-gel process with the assistance of a dodecylamine surfactant. The existence of vanadium ions not only suppressed crystallization and sintering but also enhanced the porosity of the mesoporous TiO{sub 2}. Varying the vanadium concentration led to significant changes in the chemical oxidation state of each component. The presence of metal dopants significantly improved the removal efficiency of benzene and the doping the titania with 5 mol% vanadium removed the most benzene, regardless of the adsorption temperature. The adsorption behavior was elucidated by the specific surface area, the interactions between surface hydroxyl groups and the {pi}-electrons of benzene, and the formation of {sigma}-bonding and d-{pi}* back-donation between the adsorbent and organic compounds.

Synthesis of TiO2 nanoparticles containing Fe, Si, and V using multiple diffusion flames and catalytic oxidation capability of carbon-coated nanoparticles

KAUST Repository

Ismail, Mohamed; Memon, Nasir K.; Hedhili, Mohamed N.; Anjum, Dalaver H.; Chung, Suk-Ho

2016-01-01

Titanium dioxide (TiO2) nanoparticles containing iron, silicon, and vanadium are synthesized using multiple diffusion flames. The growth of carbon-coated (C–TiO2), carbon-coated with iron oxide (Fe/C–TiO2), silica-coated (Si–TiO2), and vanadium-doped (V–TiO2) TiO2 nanoparticles is demonstrated using a single-step process. Hydrogen, oxygen, and argon are utilized to establish the flame, with titanium tetraisopropoxide (TTIP) as the precursor for TiO2. For the growth of Fe/C–TiO2 nanoparticles, TTIP is mixed with xylene and ferrocene. While for the growth of Si–TiO2 and V–TiO2, TTIP is mixed with hexamethyldisiloxane (HMDSO) and vanadium (V) oxytriisopropoxide, respectively. The synthesized nanoparticles are characterized using high-resolution transmission electron microscopy (HRTEM) with energy-filtered TEM for elemental mapping (of Si, C, O, and Ti), X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nitrogen adsorption BET surface area analysis, and thermogravimetric analysis. Anatase is the dominant phase for the C–TiO2, Fe/C–TiO2, and Si–TiO2 nanoparticles, whereas rutile is the dominant phase for the V–TiO2 nanoparticles. For C–TiO2 and Fe/C–TiO2, the nanoparticles are coated with about 3-5-nm thickness of carbon. The iron-based TiO2 nanoparticles significantly improve the catalytic oxidation of carbon, where complete oxidation of carbon occurs at a temperature of 470 °C (with iron) compared to 610 °C (without iron). Enhanced catalytic oxidation properties are also observed for model soot particles, Printex-U, when mixed with Fe/C-TiO2. With regards to Si–TiO2 nanoparticles, a uniform coating of 3 to 8 nm of silicon dioxide is observed around the TiO2 particles. This coating mainly occurs due to variance in the chemical reaction rates of the precursors. Finally, with regards to V–TiO2, vanadium is doped within the TiO2 nanoparticles as visualized by HRTEM and XPS further confirms the formation of

Synthesis of TiO2 nanoparticles containing Fe, Si, and V using multiple diffusion flames and catalytic oxidation capability of carbon-coated nanoparticles

KAUST Repository

Ismail, Mohamed

2016-01-19

Titanium dioxide (TiO2) nanoparticles containing iron, silicon, and vanadium are synthesized using multiple diffusion flames. The growth of carbon-coated (C–TiO2), carbon-coated with iron oxide (Fe/C–TiO2), silica-coated (Si–TiO2), and vanadium-doped (V–TiO2) TiO2 nanoparticles is demonstrated using a single-step process. Hydrogen, oxygen, and argon are utilized to establish the flame, with titanium tetraisopropoxide (TTIP) as the precursor for TiO2. For the growth of Fe/C–TiO2 nanoparticles, TTIP is mixed with xylene and ferrocene. While for the growth of Si–TiO2 and V–TiO2, TTIP is mixed with hexamethyldisiloxane (HMDSO) and vanadium (V) oxytriisopropoxide, respectively. The synthesized nanoparticles are characterized using high-resolution transmission electron microscopy (HRTEM) with energy-filtered TEM for elemental mapping (of Si, C, O, and Ti), X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nitrogen adsorption BET surface area analysis, and thermogravimetric analysis. Anatase is the dominant phase for the C–TiO2, Fe/C–TiO2, and Si–TiO2 nanoparticles, whereas rutile is the dominant phase for the V–TiO2 nanoparticles. For C–TiO2 and Fe/C–TiO2, the nanoparticles are coated with about 3-5-nm thickness of carbon. The iron-based TiO2 nanoparticles significantly improve the catalytic oxidation of carbon, where complete oxidation of carbon occurs at a temperature of 470 °C (with iron) compared to 610 °C (without iron). Enhanced catalytic oxidation properties are also observed for model soot particles, Printex-U, when mixed with Fe/C-TiO2. With regards to Si–TiO2 nanoparticles, a uniform coating of 3 to 8 nm of silicon dioxide is observed around the TiO2 particles. This coating mainly occurs due to variance in the chemical reaction rates of the precursors. Finally, with regards to V–TiO2, vanadium is doped within the TiO2 nanoparticles as visualized by HRTEM and XPS further confirms the formation of

Oxidation Protection of Porous Reaction-Bonded Silicon Nitride

Science.gov (United States)

Fox, D. S.

1994-01-01

Oxidation kinetics of both as-fabricated and coated reaction-bonded silicon nitride (RBSN) were studied at 900 and 1000 C with thermogravimetry. Uncoated RBSN exhibited internal oxidation and parabolic kinetics. An amorphous Si-C-O coating provided the greatest degree of protection to oxygen, with a small linear weight loss observed. Linear weight gains were measured on samples with an amorphous Si-N-C coating. Chemically vapor deposited (CVD) Si3N4 coated RBSN exhibited parabolic kinetics, and the coating cracked severely. A continuous-SiC-fiber-reinforced RBSN composite was also coated with the Si-C-O material, but no substantial oxidation protection was observed.

Viscous properties of aluminum oxide nanotubes and aluminium oxide nanoparticles - silicone oil suspensions

Science.gov (United States)

Thapa, Ram; French, Steven; Delgado, Adrian; Ramos, Carlos; Gutierrez, Jose; Chipara, Mircea; Lozano, Karen

2010-03-01

Electrorheological (ER) fluids consisting of γ-aluminum oxide nanotubes and γ-aluminum oxide nanoparticles dispersed within silicone oil were prepared. The relationship between shear stress and shear rate was measured and theoretically simulated by using an extended Bingham model for both the rheological and electrorheological features of these systems. Shear stress and viscosity showed a sharp increase for the aluminum oxide nanotubes suspensions subjected to applied electric fields whereas aluminum oxide nanoparticles suspensions showed a moderate change. It was found that the transition from liquid to solid state (mediated by the applied electric field) can be described by a power law and that for low applied voltages the relationship is almost linear.

Analysis of vanadium slags, roasted and leached products. Determination of contents of total vanadium, chromium, sodium, and soluble vanadium

International Nuclear Information System (INIS)

Hasek, Z.

1975-01-01

Accurate, rapid and simple methods were elaborated of determining total vanadium, chromium, and sodium in vanadium slags, and in roasted and leached products in one sample batch. The analysis was conducted in a teflon vial using inorganic acids. A method od determining soluble vanadium in similar materials was also elaborated and verified. (B.S.)

Visible photocatalytic properties of vanadium doped zinc oxide aerogel nanopowder

Energy Technology Data Exchange (ETDEWEB)

Slama, R. [Laboratoire de Physique des Materiaux et des Nanomateriaux appliquee a l' Environnement, Faculte des Sciences de Gabes, Universite de Gabes, Cite Erriadh Manara Zrig, 6072 Gabes (Tunisia); Unite de Recherche Environnement, Catalyse et Analyse des procedes URECAP (UR/99/11-20), Ecole Nationale d' Ingenieurs de Gabes, Universite de Gabes, Route de Medenine 6029 Gabes (Tunisia); Ghribi, F. [Laboratoire de Physique des Materiaux et des Nanomateriaux appliquee a l' Environnement, Faculte des Sciences de Gabes, Universite de Gabes, Cite Erriadh Manara Zrig, 6072 Gabes (Tunisia); Houas, A. [Unite de Recherche Environnement, Catalyse et Analyse des procedes URECAP (UR/99/11-20), Ecole Nationale d' Ingenieurs de Gabes, Universite de Gabes, Route de Medenine 6029 Gabes (Tunisia); Barthou, C. [Institut des NanoSciences de Paris (INSP), UPMC Universite Paris 6, CNRS UMR 7588, 140 rue de Lourmel, F-75015 Paris France (France); El Mir, L., E-mail: Lassaad.ElMir@fsg.rnu.tn [Laboratoire de Physique des Materiaux et des Nanomateriaux appliquee a l' Environnement, Faculte des Sciences de Gabes, Universite de Gabes, Cite Erriadh Manara Zrig, 6072 Gabes (Tunisia); College of Sciences, Department of Physics, Al-Imam Muhammad Ibn Saud University, Riyadh 11623 (Saudi Arabia)

2011-06-30

Vanadium-doped zinc oxide nanoparticles have been synthesized by sol-gel method. In our approach the water for hydrolysis used in the synthesis of nanopowder was slowly released followed by a thermal drying in ethyl alcohol at 250 deg. C. The obtained nanopowder was characterized by various techniques such as particle size analysis, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and photoluminescence (PL). In the as-prepared state, the powder with an average particle size of 25 nm presents a strong luminescence band in the visible range. From photoluminescence excitation (PLE) the energy position of the obtained PL band depends on the excitation wavelength and this PL band can be also observed under visible excitations. This result is very promising for visible photo catalysis applications, which was confirmed by methylene blue photo-degradation using visible lamp as a light source. - Research Highlights: > We explore the impact of plot size on estimation of a small watershed outputs. > Different lengths and fixed width plots were installed on two slope aspects. > The performance of two similar sets of experimental plots was examined. > The optimal lengths for estimation of sediment and runoff were finally found.

Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

International Nuclear Information System (INIS)

Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

2011-01-01

We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

Etched ion tracks in silicon oxide and silicon oxynitride as charge injection or extraction channels for novel electronic structures

International Nuclear Information System (INIS)

Fink, D.; Petrov, A.V.; Hoppe, K.; Fahrner, W.R.; Papaleo, R.M.; Berdinsky, A.S.; Chandra, A.; Chemseddine, A.; Zrineh, A.; Biswas, A.; Faupel, F.; Chadderton, L.T.

2004-01-01

The impact of swift heavy ions onto silicon oxide and silicon oxynitride on silicon creates etchable tracks in these insulators. After their etching and filling-up with highly resistive matter, these nanometric pores can be used as charge extraction or injection paths towards the conducting channel in the underlying silicon. In this way, a novel family of electronic structures has been realized. The basic characteristics of these 'TEMPOS' (=tunable electronic material with pores in oxide on silicon) structures are summarized. Their functionality is determined by the type of insulator, the etch track diameters and lengths, their areal densities, the type of conducting matter embedded therein, and of course by the underlying semiconductor and the contact geometry. Depending on the TEMPOS preparation recipe and working point, the structures may resemble gatable resistors, condensors, diodes, transistors, photocells, or sensors, and they are therefore rather universally applicable in electronics. TEMPOS structures are often sensitive to temperature, light, humidity and organic gases. Also light-emitting TEMPOS structures have been produced. About 37 TEMPOS-based circuits such as thermosensors, photosensors, humidity and alcohol sensors, amplifiers, frequency multipliers, amplitude modulators, oscillators, flip-flops and many others have already been designed and successfully tested. Sometimes TEMPOS-based circuits are more compact than conventional electronics

Oxidation-enhanced diffusion of boron in very low-energy N2+-implanted silicon

Science.gov (United States)

Skarlatos, D.; Tsamis, C.; Perego, M.; Fanciulli, M.

2005-06-01

In this article we study the interstitial injection during oxidation of very low-energy nitrogen-implanted silicon. Buried boron δ layers are used to monitor the interstitial supersaturation during the oxidation of nitrogen-implanted silicon. No difference in boron diffusivity enhancement was observed compared to dry oxidation of nonimplanted samples. This result is different from our experience from N2O oxynitridation study, during which a boron diffusivity enhancement of the order of 20% was observed, revealing the influence of interfacial nitrogen on interstitial kinetics. A possible explanation may be that implanted nitrogen acts as an excess interstitial sink in order to diffuse towards the surface via a non-Fickian mechanism. This work completes a wide study of oxidation of very low-energy nitrogen-implanted silicon related phenomena we performed within the last two years [D. Skarlatos, C. Tsamis, and D. Tsoukalas, J. Appl. Phys. 93, 1832 (2003); D. Skarlatos, E. Kapetanakis, P. Normand, C. Tsamis, M. Perego, S. Ferrari, M. Fanciulli, and D. Tsoukalas, J. Appl. Phys. 96, 300 (2004)].

Study on wear resistance of vanadium alloying compacted/vermicular graphite cast iron

International Nuclear Information System (INIS)

Park, Yoon Woo

1987-01-01

Wear resistance of the Compacted/Vermicular graphite cast irons was studied by changing the vanadium content in the cast irons. The results obtained in this work are summarized as follows. 1. When the same amount of vanadium was added to the flake graphite cast iron, spheroidal graphitecast iron and Compacted/Vermicular graphite cast iron, spheroidal graphite cast iron and Compacted/Vermicular graphite cast iron wear resistance decreased in following sequence, that is, flake graphite cast iron> spheroidal graphite cast iron>Compacted/Vermicular graphite cast iron. 2. Addition of vanadium to the Compacted/Vermicular cast iron leaded to a remarkable increase in hardness because it made the amount of pearlite in matrix increase. 3. Addition of vanadium to the compacted/Vermicular graphite cast iron significantly enhanced wear resistance and the maximum resistance was achieved at about 0.36% vanadium. 4. The maximum amount of wear apppeared at sliding speed of about 1.4m/sec and wear mode was considered to be oxidation abrasion from the observation of wear tracks. (Author)

Electrochemical behaviour of a vanadium anode in phosphoric acid and phosphate solutions

International Nuclear Information System (INIS)

Alonzo, V.; Darchen, A.; Fur, E. Le; Pivan, J.Y.

2006-01-01

Anodic polarisation of a vanadium electrode has been studied in H 3 PO 4 solutions and some phosphate solutions: LiH 2 PO 4 , NaH 2 PO 4 , KH 2 PO 4 and NH 4 H 2 PO 4 . The anodic behaviour of a vanadium electrode showed similarities in weak concentrated H 3 PO 4 , in LiH 2 PO 4 and NaH 2 PO 4 solutions: the polarisation curve exhibited a current peak followed by current oscillations and then a current plateau. Concentrated H 3 PO 4 , 1 M KH 2 PO 4 and NH 4 H 2 PO 4 solutions involved vanadium passivation with a very slight current density plateau. Yellow compound identified to VOPO 4 .2H 2 O was obtained after controlled potential oxidation of vanadium in 5-10 M H 3 PO 4 . Green products were obtained in 1 M phosphate solutions and in 1-3 M H 3 PO 4 on vanadium anode after controlled potential electrolysis. All these vanadophosphate compounds contained the monovalent cation which was present in the solution

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Simple Sensitive Spectrophotometric Determination of Vanadium in Biological and Environmental Samples

Directory of Open Access Journals (Sweden)

B. Krishna Priya

2006-01-01

Full Text Available Novel, rapid, highly sensitive and selective spectrophotometric method for the determination of traces of vanadium (V in environmental and biological samples, pharmaceutical and steel samples was studied. The method is based on oxidation of 2,4- dinitro phenyl hydrazine(2,4-DNPH by vanadium (V followed by coupling reaction with N-(1-naphthalene-1-ylethane-1,2-diamine-dihydrochloride (NEDA in acidic medium to give red colored derivative or on oxidation of 4-Amino Pyridine by vanadium (V followed by coupling reaction with NEDA in basic medium to give pink colored derivative. The red colored derivative having an λmax 495 nm which is stable for 8 days and the pink colored derivative with 525 nm is stable for more than 7 days at 350C. Beer's law is obeyed for vanadium (V in the concentration range of 0.02 - 3.5 μg mL–1 (red derivative and 0.03 – 4.5 μg mL–1 (pink derivative at the wave length of maximum absorption. The optimum reaction conditions and other analytical parameters were investigated to enhance the sensitivity of the present method. The detailed study of various interferences made the method more selective. The proposed method was successfully applied to the analysis of vanadium in natural water samples, plant material, soil samples, synthetic mixtures, pharmaceutical samples and biological samples. The results obtained were agreed with the reported methods at the 95 % confidence level. The performance of proposed method was evaluated in terms of Student's t-test and Variance ratio f-test which indicates the significance of proposed method over reported method.

Y-Ba-Cu-O superconducting film on oxidized silicon

International Nuclear Information System (INIS)

Gupta, R.P.; Khokle, W.S.; Dubey, R.C.; Singhal, S.; Nagpal, K.C.; Rao, G.S.T.; Jain, J.D.

1988-01-01

We report thick superconducting films of Y-Ba-Cu-O on oxidized silicon substrates. The critical temperatures for onset and zero resistance are 96 and 77 K, respectively. X-ray diffraction analysis predicts 1, 2, 3 composition and orthorhombic phase of the film

Size modulation of nanocrystalline silicon embedded in amorphous silicon oxide by Cat-CVD

International Nuclear Information System (INIS)

Matsumoto, Y.; Godavarthi, S.; Ortega, M.; Sanchez, V.; Velumani, S.; Mallick, P.S.

2011-01-01

Different issues related to controlling size of nanocrystalline silicon (nc-Si) embedded in hydrogenated amorphous silicon oxide (a-SiO x :H) deposited by catalytic chemical vapor deposition (Cat-CVD) have been reported. Films were deposited using tantalum (Ta) and tungsten (W) filaments and it is observed that films deposited using tantalum filament resulted in good control on the properties. The parameters which can affect the size of nc-Si domains have been studied which include hydrogen flow rate, catalyst and substrate temperatures. The deposited samples are characterized by X-ray diffraction, HRTEM and micro-Raman spectroscopy, for determining the size of the deposited nc-Si. The crystallite formation starts for Ta-catalyst around the temperature of 1700 o C.

Interaction of titanium and vanadium with carbon dioxide in heating

International Nuclear Information System (INIS)

Vlasyuk, R.Z.; Kurovskii, V.Y.; Lyapunov, A.P.; Radomysel'skii, I.D.

1986-01-01

To obtain prediction data on the change in properties of titaniumand vanadium-base powder metallurgy materials operating in a carbon dioxide atmosphere, and also to clarify the mechanism of their interaction with the gas in this work, gravimetric investigations of specimens heated at temperatures of 300-1000 C and an x-ray diffraction analysis of their surface were made and the composition of the gas in the heating chamber was studied. The results of the investigations indicate a similarity between the mechanisms of interaction of titanium and vanadium with carbon dioxide including the formation of oxides on the surface of the metal with subsequent carbidization at temperatures above 800 C. On the basis of the data obtained, it may be concluded that the operating temperature limits of titanium- or vanadium-base materials in carbon dioxide must not exceed 400 and 600 C, respectively

Super-oxidation of silicon nanoclusters: magnetism and reactive oxygen species at the surface

Energy Technology Data Exchange (ETDEWEB)

Lepeshkin, Sergey; Baturin, Vladimir; Tikhonov, Evgeny; Matsko, Nikita; Uspenskii, Yurii; Naumova, Anastasia; Feya, Oleg; Schoonen, Martin A.; Oganov, Artem R.

2016-01-01

Oxidation of silicon nanoclusters depending on the temperature and oxygen pressure is explored from first principles using the evolutionary algorithm, and structural and thermodynamic analysis. From our calculations of 90 SinOm clusters we found that under normal conditions oxidation does not stop at the stoichiometric SiO2 composition, as it does in bulk silicon, but goes further placing extra oxygen atoms on the cluster surface. These extra atoms are responsible for light emission, relevant to reactive oxygen species and many of them are magnetic. We argue that the super-oxidation effect is size-independent and discuss its relevance to nanotechnology and miscellaneous applications, including biomedical ones.

Transparent conductive oxides for thin-film silicon solar cells

NARCIS (Netherlands)

Löffler, J.

2005-01-01

This thesis describes research on thin-film silicon solar cells with focus on the transparent conductive oxide (TCO) for such devices. In addition to the formation of a transparent and electrically conductive front electrode for the solar cell allowing photocurrent collection with low ohmic losses,

Highly Stable Aqueous Zinc-ion Storage Using Layered Calcium Vanadium Oxide Bronze Cathode

KAUST Repository

Xia, Chuan; Guo, Jing; Li, Peng; Zhang, Xixiang; Alshareef, Husam N.

2018-01-01

Cost-effective aqueous rechargeable batteries are attractive alternatives to non-aqueous cells for stationary grid energy storage. Among different aqueous cells, zinc-ion batteries (ZIBs), based on Zn2+ intercalation chemistry, stand out as they can employ high-capacity Zn metal as anode material. Herein, we report a layered calcium vanadium oxide bronze as cathode material for aqueous Zn batteries. For the storage of Zn2+ ions in aqueous electrolyte, we demonstrate that calcium based bronze structure can deliver a high capacity of 340 mAh g-1 at 0.2 C, good rate capability and very long cycling life (96% retention after 3000 cycles at 80 C). Further, we investigate the Zn2+ storage mechanism, and the corresponding electrochemical kinetics in this bronze cathode. Finally, we show that our Zn cell delivers an energy density of 267 Wh kg-1 at a power density of 53.4 W kg-1.

Highly Stable Aqueous Zinc-ion Storage Using Layered Calcium Vanadium Oxide Bronze Cathode

KAUST Repository

Xia, Chuan

2018-02-12

Cost-effective aqueous rechargeable batteries are attractive alternatives to non-aqueous cells for stationary grid energy storage. Among different aqueous cells, zinc-ion batteries (ZIBs), based on Zn2+ intercalation chemistry, stand out as they can employ high-capacity Zn metal as anode material. Herein, we report a layered calcium vanadium oxide bronze as cathode material for aqueous Zn batteries. For the storage of Zn2+ ions in aqueous electrolyte, we demonstrate that calcium based bronze structure can deliver a high capacity of 340 mAh g-1 at 0.2 C, good rate capability and very long cycling life (96% retention after 3000 cycles at 80 C). Further, we investigate the Zn2+ storage mechanism, and the corresponding electrochemical kinetics in this bronze cathode. Finally, we show that our Zn cell delivers an energy density of 267 Wh kg-1 at a power density of 53.4 W kg-1.

Combined effect of vanadium and nickel on lipid peroxidation and ...

African Journals Online (AJOL)

use

2011-12-12

Dec 12, 2011 ... to nickel led to a significant decrease (p < 0.001) in SOD, GST activities in liver and GSH content in ..... administration and GSH is oxidized to disulfide form .... Chasteen N (1983). The biochemistry of vanadium. Struct. Bond.

Thermodynamics of oxygen in solid solution in vanadium and niobium--vanadium alloys

International Nuclear Information System (INIS)

Steckel, G.L.

1977-01-01

A thermodynamic study was made of the vanadium-oxygen and niobium-vanadium-oxygen systems utilizing the solid state galvanic cell technique. Investigations were made with a ThO 2 /Y 2 O 3 electrolyte over the temperature ranges 700 to 1200 0 C (973 to 1473 K) for the binary system and 650 to 1150 0 C (923 to 1423 K) for the ternary system. The activity of oxygen in vanadium obeys Henry's law for the temperatures of this investigation for concentrations up to 3.2 at. percent oxygen. For higher concentrations the activity coefficient shows positive deviations from Henry's law. The terminal solubility of oxygen in vanadium was determined. The activity of oxygen in Nb--V alloys obeys Henry's law for the temperatures of this study for oxygen concentrations less than approximately 2 at. percent. For certain Nb/V ratios Henry's law is obeyed for concentrations as high as 6.5 at. percent oxygen. First order entropy and enthalpy interaction coefficients have been determined to describe the effect on the oxygen activity of niobium additions to vanadium-rich alloys with dilute oxygen concentrations. Niobium causes relatively small decreases in the oxygen activity of V-rich alloys and increases the oxygen solubility limit. Vanadium additions to Nb-rich alloys also increases the oxygen solubility and causes substantial decreases in the dilute solution oxygen activities. The change in the thermodynamic properties when molecular oxygen dissolves in vanadium and niobium--vanadium alloys and the equilibrium oxygen pressure over the binary and ternary systems were also determined

Low Permeable Hydrocarbon Polymer Electrolyte Membrane for Vanadium Redox Flow Battery.

Science.gov (United States)

Jung, Ho-Young; Moon, Geon-O; Jung, Seunghun; Kim, Hee Tak; Kim, Sang-Chai; Roh, Sung-Hee

2017-04-01

Polymer electrolyte membrane (PEM) confirms the life span of vanadium redox flow battery (VRFB). Products from Dupont, Nafion membrane, is mainly used for PEM in VRFB. However, permeation of vanadium ion occurs because of Nafion’s high permeability. Therefore, the efficiency of VRFB decreases and the prices becomes higher, which hinders VRFB’s commercialization. In order to solve this problem, poly(phenylene oxide) (PPO) is sulfonated for the preparation of low-priced hydrocarbon polymer electrolyte membrane. sPPO membrane is characterized by fundamental properties and VRFB cell test.

Heteronuclear three-dimensional NMR spectroscopy. Natural abundance 13C chemical shift editing of 1H-1H COSY spectra

International Nuclear Information System (INIS)

Fesik, S.W.; Gampe, R.T. Jr.; Zuiderweg, E.R.P.

1989-01-01

It has been demonstrated that heteronuclear 3D NMR spectroscopy can be effectively applied to small molecules with 13 C at natural abundance. A 78mM solution of the aminoglycoside, kanamycin A was used for this experiment. The heteronuclear 3D NMR spectroscopy is shown to be a useful method for resolving spectral overlap in all frequency domains. 10 refs., 2 figs

Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

International Nuclear Information System (INIS)

Choi, H.Y.; Wong, H.; Filip, V.; Sen, B.; Kok, C.W.; Chan, M.; Poon, M.C.

2006-01-01

It was recently found that the silicon oxynitride prepared by oxidation of silicon-rich silicon nitride (SRN) has several important features. The high nitrogen and extremely low hydrogen content of this material allows it to have a high dielectric constant and a low trap density. The present work investigates in further detail the electrical reliability of this kind of gate dielectric films by studying the charge trapping and interface state generation induced by constant current stressing. Capacitance-voltage (C-V) measurements indicate that for oxidation temperatures of 850 and 950 deg. C, the interface trap generation is minimal because of the high nitrogen content at the interface. At a higher oxidation temperature of 1050 deg. C, a large flatband shift is found for constant current stressing. This observation can be explained by the significant reduction of the nitrogen content and the phase separation effect at this temperature as found by X-ray photoelectron spectroscopy study. In addition to the high nitrogen content, the Si atoms at the interface exist in the form of random bonding to oxygen and nitrogen atoms for samples oxidized at 850 and 950 deg. C. This structure reduces the interface bonding constraint and results in the low interface trap density. For heavily oxidized samples the trace amount of interface nitrogen atoms exist in the form of a highly constraint SiN 4 phase and the interface oxynitride layer is a random mixture of SiO 4 and SiN 4 phases, which consequently reduces the reliability against high energy electron stressing

The influence of oxidation properties on the electron emission characteristics of porous silicon

International Nuclear Information System (INIS)

He, Li; Zhang, Xiaoning; Wang, Wenjiang; Wei, Haicheng

2016-01-01

Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm"2 and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

The influence of oxidation properties on the electron emission characteristics of porous silicon

Energy Technology Data Exchange (ETDEWEB)

He, Li [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, Xiaoning, E-mail: znn@mail.xjtu.edu.cn [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wang, Wenjiang [Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049 (China); Wei, Haicheng [School of Electrical and Information Engineering, Beifang University of Nationalities, Yinchuan750021 (China)

2016-09-30

Highlights: • Evaluated the oxidation properties of porous silicon from semi-quantitative methods. • Discovered the relationship between oxidation properties and emission characteristics. • Revealed the micro-essence of the electron emission of the porous silicon. - Abstract: In order to investigate the influence of oxidation properties such as oxygen content and its distribution gradient on the electron emission characteristics of porous silicon (PS) emitters, emitters with PS thickness of 8 μm, 5 μm, and 3 μm were prepared and then oxidized by electrochemical oxidation (ECO) and ECO-RTO (rapid thermal oxidation) to get different oxidation properties. The experimental results indicated that the emission current density, efficiency, and stability of the PS emitters are mainly determined by oxidation properties. The higher oxygen content and the smaller oxygen distribution gradient in the PS layer, the larger emission current density and efficiency we noted. The most favorable results occurred for the PS emitter with the smallest oxygen distribution gradient and the highest level of oxygen content, with an emission current density of 212.25 μA/cm{sup 2} and efficiency of 59.21‰. Additionally, it also demonstrates that thick PS layer benefits to the emission stability due to its longer electron acceleration tunnel. The FN fitting plots indicated that the effective emission areas of PS emitters can be enlarged and electron emission thresholds is decreased because of the higher oxygen content and smaller distribution gradient, which were approved by the optical micrographs of top electrode of PS emitters before and after electron emission.

Method for forming indium oxide/n-silicon heterojunction solar cells

Science.gov (United States)

Feng, Tom; Ghosh, Amal K.

1984-03-13

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

Locking of electron spin coherence above 20 ms in natural silicon carbide

Science.gov (United States)

Simin, D.; Kraus, H.; Sperlich, A.; Ohshima, T.; Astakhov, G. V.; Dyakonov, V.

2017-04-01

We demonstrate that silicon carbide (SiC) with a natural isotope abundance can preserve a coherent spin superposition in silicon vacancies over an unexpectedly long time exceeding 20 ms. The spin-locked subspace with a drastically reduced decoherence rate is attained through the suppression of heteronuclear spin crosstalking by applying a moderate magnetic field in combination with dynamic decoupling from the nuclear spin baths. Furthermore, we identify several phonon-assisted mechanisms of spin-lattice relaxation and find that it can be extremely long at cryogenic temperatures, equal to or even longer than 10 s. Our approach may be extended to other polyatomic compounds and opens a path towards improved qubit memory for wafer-scale quantum technologies.

Electrochemical impedance spectroscopy of oxidized porous silicon

Energy Technology Data Exchange (ETDEWEB)

Mula, Guido, E-mail: guido.mula@unica.it [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Tiddia, Maria V. [Dipartimento di Fisica, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Ruffilli, Roberta [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Falqui, Andrea [Nanochemistry, Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova (Italy); Dipartimento di Scienze Chimiche e Geologiche, Università degli Studi di Cagliari, Cittadella Universitaria di Monserrato, S.P. 8 km 0.700, 09042 Cagliari (Italy); Palmas, Simonetta; Mascia, Michele [Dipartimento di Ingegneria Meccanica Chimica e dei Materiali, Università degli Studi di Cagliari, Piazza d' Armi, 09126 Cagliari (Italy)

2014-04-01

We present a study of the electrochemical oxidation process of porous silicon. We analyze the effect of the layer thickness (1.25–22 μm) and of the applied current density (1.1–11.1 mA/cm{sup 2}, values calculated with reference to the external samples surface) on the oxidation process by comparing the galvanostatic electrochemical impedance spectroscopy (EIS) measurements and the optical specular reflectivity of the samples. The results of EIS were interpreted using an equivalent circuit to separate the contribution of different sample parts. A different behavior of the electrochemical oxidation process has been found for thin and thick samples: whereas for thin samples the oxidation process is univocally related to current density and thickness, for thicker samples this is no more true. Measurements by Energy Dispersive Spectroscopy using a Scanning Electron Microscopy confirmed that the inhomogeneity of the electrochemical oxidation process is increased by higher thicknesses and higher currents. A possible explanation is proposed to justify the different behavior of thin and thick samples during the electrochemical process. - Highlights: • A multidisciplinary approach on porous Si electrochemical oxidation is proposed. • Electrochemical, optical, and structural characterizations are used. • Layer thickness and oxidation current effects are shown. • An explanation of the observed behavior is proposed.

The oxidation of titanium nitride- and silicon nitride-coated stainless steel in carbon dioxide environments

International Nuclear Information System (INIS)

Mitchell, D.R.G.; Stott, F.H.

1992-01-01

A study has been undertaken into the effects of thin titanium nitride and silicon nitride coatings, deposited by physical vapour deposition and chemical vapour deposition processes, on the oxidation resistance of 321 stainless steel in a simulated advanced gas-cooled reactor carbon dioxide environment for long periods at 550 o C and 700 o C under thermal-cycling conditions. The uncoated steel contains sufficient chromium to develop a slow-growing chromium-rich oxide layer at these temperatures, particularly if the surfaces have been machine-abraded. Failure of this layer in service allows formation of less protective iron oxide-rich scales. The presence of a thin (3-4 μm) titanium nitride coating is not very effective in increasing the oxidation resistance since the ensuing titanium oxide scale is not a good barrier to diffusion. Even at 550 o C, iron oxide-rich nodules are able to develop following relatively rapid oxidation and breakdown of the coating. At 700 o C, the coated specimens oxidize at relatively similar rates to the uncoated steel. A thin silicon nitride coating gives improved oxidation resistance, with both the coating and its slow-growing oxide being relatively electrically insulating. The particular silicon nitride coating studied here was susceptible to spallation on thermal cycling, due to an inherently weak coating/substrate interface. (Author)

Enhancing the Electronic Conductivity of Vanadium-tellurite Glasses by Tuning the Redox State

DEFF Research Database (Denmark)

Kjeldsen, Jonas; Yue, Yuanzheng

Transition metal oxides are used in a variety of electronic purposes, e.g., vanadium tellurite as cathode material in high-power demanding batteries. By tuning the redox state of vanadium, it is possible to achieve a lower internal resistance within the entire battery unit, thus a higher capacity....... In this work we vary the redox state of a given vanadium tellurite system by performing post heat-treatment in controlled atmosphere. This process is in theory not limited only to varying electronic conductivity, but also varying the glass structure, and hence, changing properties of the glasses, e.g, thermal...... and mechanical properties. Finally we give insight into the relation between the redox state and electronic conductivity....

Vanadium in South Africa

International Nuclear Information System (INIS)

Rohrman, B.

1985-01-01

This paper deals briefly with the history of vanadium and its uses, price movement, and world resources. It then describes the titanomagnetite ore of the Bushveld Complex, and the production of vanadium from this ore at Highveld Steel and Vanadium Corporation Limited, giving details of the various processes used, including the roast-leach, rotary-kiln, electric-smelting, shaking-ladle, and basic-oxygen-furnace operations. The paper concludes with a very brief account of the treatment of Highveld slags in Europe for the production of vanadium pentoxide and ferrovanadium

RF Reactive Magnetron Sputter Deposition of Silicon Sub-Oxides

NARCIS (Netherlands)

Hattum, E.D. van

2007-01-01

RF reactive magnetron plasma sputter deposition of silicon sub oxide E.D. van Hattum Department of Physics and Astronomy, Faculty of Sciences, Utrecht University The work described in the thesis has been inspired and stimulated by the use of SiOx layers in the direct inductive printing technology,

LiBSi{sub 2}: a tetrahedral semiconductor framework from boron and silicon atoms bearing lithium atoms in the channels

Energy Technology Data Exchange (ETDEWEB)

Zeilinger, Michael; Faessler, Thomas F. [Department of Chemistry, Technische Universitaet Muenchen, Garching (Germany); Wuellen, Leo van [Department of Physics, University of Augsburg (Germany); Benson, Daryn [Department of Physics, Arizona State University, Tempe, AZ (United States); Kranak, Verina F.; Konar, Sumit; Haeussermann, Ulrich [Department of Materials and Environmental Chemistry, Stockholm University (Sweden)

2013-06-03

Silicon swallows up boron. The novel open tetrahedral framework structure (OTF) of the Zintl phase LiBSi{sub 2} was made by applying high pressure to a mixture of LiB and elemental silicon. The compound represents a new topology in the B-Si net (called tum), which hosts Li atoms in the channels. LiBSi{sub 2} is the first example where B and Si atoms form an ordered common framework structure with B engaged exclusively in heteronuclear B-Si contacts. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Partial thermodynamic functions of hydrogen in complex hydrated vanadium(5) and tungsten(6) oxides

International Nuclear Information System (INIS)

Volkov, V.L.; Zakharova, G.S.

2003-01-01

The partial thermodynamic characteristics of hydrogen in the complex hydrated vanadium(5) and tungsten(6) oxides, obtained through the sol-gel method, of the general formula H 2 V 12-y W y O 31+δ ·nH 2 O (0 ≤ x ≤ 0.33) are determined through the emf method. The changes in these values (ΔG-bar(H 2 ), ΔH-bar(H 2 ) and ΔS-bar(H 2 )) in dependence on the compound composition are discussed. It is established that ΔG-bar(H 2 ) phases, amorphous to X-rays are determined by the ΔS-bar(H 2 ) value and crystalline ones by ΔH-bar(H 2 ). The scheme of the phase relationships of the H 2 O-H-WO 3 -V 2 O 5 system, whereto the given phases are related are presented [ru

Controlled synthesis and electrochemical properties of vanadium ...

Indian Academy of Sciences (India)

Vanadium oxides (V3O7·H2O and VO2) with different morphologies have been selectively synthesized ... appeared at around 68 ◦C. Furthermore, the electrochemical properties of V3O7·H2O nanobelts, VO2(B) .... morphologies of shape-controlled orthorhombic V3O7·H2O ..... condition, as shown in figures S14i and j.

Study of sulfur and vanadium in heavy petroleum products

Energy Technology Data Exchange (ETDEWEB)

Novelli, J.M.

1982-10-01

Sulfur compounds in heavy oil fractions (>450/sup 0/C) are studied in the first part of this work. After chemical oxidation by metachloroperbenzoic acid to obtain sulfones, sulfur compounds are analyzed by infrared spectroscopy for their qualitative and quantitative repartition. The method can be applied for the study of sulfur containing molecules before and after structural modifications of petroleum fractions by any chemical refining processes. In a second part vanadium is characterized in asphalt by physicochemical and chemical methods. 80% of the vanadium in a Boscan asphalt is under the form of porphyrins. Different associations are evidenced in petroleum fractions and metalloporphyrins, but the liaison between the vanadyl group and heterocondensate from asphalts is the more frequent.

Direct comparison of the electrical properties in metal/oxide/nitride/oxide/silicon and metal/aluminum oxide/nitride/oxide/silicon capacitors with equivalent oxide thicknesses

Energy Technology Data Exchange (ETDEWEB)

An, Ho-Myoung; Seo, Yu Jeong; Kim, Hee Dong; Kim, Kyoung Chan; Kim, Jong-Guk [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Cho, Won-Ju; Koh, Jung-Hyuk [Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701 (Korea, Republic of); Sung, Yun Mo [Department of Materials and Science Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.k [School of Electrical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

2009-07-31

We examine the electrical properties of metal/oxide/nitride/oxide/silicon (MONOS) capacitors with two different blocking oxides, SiO{sub 2} and Al{sub 2}O{sub 3}, under the influence of the same electric field. The thickness of the Al{sub 2}O{sub 3} layer is set to 150 A, which is electrically equivalent to a thickness of the SiO{sub 2} layer of 65 A, in the MONOS structure for this purpose. The capacitor with the Al{sub 2}O{sub 3} blocking layer shows a larger capacitance-voltage memory window of 8.6 V, lower program voltage of 7 V, faster program/erase speeds of 10 ms/1 {mu}s, lower leakage current of 100 pA and longer data retention than the one with the SiO{sub 2} blocking layer does. These improvements are attributed to the suppression of the carrier transport to the gate electrode afforded by the use of an Al{sub 2}O{sub 3} blocking layer physically thicker than the SiO{sub 2} one, as well as the effective charge-trapping by Al{sub 2}O{sub 3} at the deep energy levels in the nitride layer.

Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

2010-12-15

The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

Role of masking oxide on silicon in processes of defect generation at formation of SIMOX structures

CERN Document Server

Askinazi, A Y; Miloglyadova, L V

2002-01-01

One investigated into Si-SiO sub 2 structures formed by implantation of oxygen ions into silicon (SIMOX-technology) by means of techniques based on measuring of high-frequency volt-farad characteristics and by means of electroluminescence. One determined existence of electrically active centres and of luminescence centres in the formed oxide layer near boundary with silicon. One clarified the role SiO sub 2 masking layer in silicon in defect generation under formation of the masked oxide layer. One established dependence of concentration of electrically active and luminescence centres on thickness of masking layer

Electrochemical performance of polypyrrole/silver vanadium oxide composite cathodes in lithium primary batteries

Science.gov (United States)

Anguchamy, Yogesh K.; Lee, Jong-Won; Popov, Branko N.

Polypyrrole (PPy)/silver vanadium oxide (SVO) composite cathode materials were synthesized by polymerizing pyrrole onto the surface of pure SVO particles. Electrochemical characterization was carried out by performing galvanostatic discharge, pulse discharge and ac-impedance experiments. The composite electrode exhibited better performance than pristine SVO in all the experiments. The composite electrodes yielded a higher discharge capacity and a better pulse discharge capability when compared to the pristine SVO electrode. The pulse discharge and ac-impedance studies indicated that PPy forms an effective conductive network on the SVO surface and thereby reduces the particle-to-particle contact resistance and facilitates the interfacial charge transfer kinetics. To determine the thermal stability of the composite cathode, galvanostatic discharge and ac-impedance experiments were performed at different temperatures. The capacity increased with temperature due to enhanced charge transfer kinetics and low mass transfer limitations. The peak capacity was obtained at 60 °C, after which the performance degraded with any further increase in temperature.

Electrochemical performance of polypyrrole/silver vanadium oxide composite cathodes in lithium primary batteries

Energy Technology Data Exchange (ETDEWEB)

Anguchamy, Yogesh K.; Lee, Jong-Won; Popov, Branko N. [Center for Electrochemical Engineering, Department of Chemical Engineering, University of South Carolina, Columbia, SC 29208 (United States)

2008-09-15

Polypyrrole (PPy)/silver vanadium oxide (SVO) composite cathode materials were synthesized by polymerizing pyrrole onto the surface of pure SVO particles. Electrochemical characterization was carried out by performing galvanostatic discharge, pulse discharge and ac-impedance experiments. The composite electrode exhibited better performance than pristine SVO in all the experiments. The composite electrodes yielded a higher discharge capacity and a better pulse discharge capability when compared to the pristine SVO electrode. The pulse discharge and ac-impedance studies indicated that PPy forms an effective conductive network on the SVO surface and thereby reduces the particle-to-particle contact resistance and facilitates the interfacial charge transfer kinetics. To determine the thermal stability of the composite cathode, galvanostatic discharge and ac-impedance experiments were performed at different temperatures. The capacity increased with temperature due to enhanced charge transfer kinetics and low mass transfer limitations. The peak capacity was obtained at 60 C, after which the performance degraded with any further increase in temperature. (author)

Critical V2O5/TeO2 Ratio Inducing Abrupt Property Changes in Vanadium Tellurite Glasses.

Science.gov (United States)

Kjeldsen, Jonas; Rodrigues, Ana C M; Mossin, Susanne; Yue, Yuanzheng

2014-12-26

Transition metal containing glasses have unique electrical properties and are therefore often used for electrochemical applications, such as in batteries. Among oxide glasses, vanadium tellurite glasses exhibit the highest electronic conductivity and thus the high potential for applications. In this work, we investigate how the dynamic and physical properties vary with composition in the vanadium tellurite system. The results show that there exists a critical V(2)O(5) concentration of 45 mol %, above which the local structure is subjected to a drastic change with increasing V(2)O(5), leading to abrupt changes in both hardness and liquid fragility. Electronic conductivity does not follow the expected correlation to the valence state of the vanadium as predicted by the Mott-Austin equation but shows a linear correlation to the mean distance between vanadium ions. These findings could contribute to designing optimum vanadium tellurite compositions for electrochemical devices. The work gives insight into the mechanism of electron conduction in the vanadium tellurite systems.

Electronic structure of indium-tungsten-oxide alloys and their energy band alignment at the heterojunction to crystalline silicon

Science.gov (United States)

Menzel, Dorothee; Mews, Mathias; Rech, Bernd; Korte, Lars

2018-01-01

The electronic structure of thermally co-evaporated indium-tungsten-oxide films is investigated. The stoichiometry is varied from pure tungsten oxide to pure indium oxide, and the band alignment at the indium-tungsten-oxide/crystalline silicon heterointerface is monitored. Using in-system photoelectron spectroscopy, optical spectroscopy, and surface photovoltage measurements, we show that the work function of indium-tungsten-oxide continuously decreases from 6.3 eV for tungsten oxide to 4.3 eV for indium oxide, with a concomitant decrease in the band bending at the hetero interface to crystalline silicon than indium oxide.

Fabrication of disposable topographic silicon oxide from sawtoothed patterns: control of arrays of gold nanoparticles.

Science.gov (United States)

Cho, Heesook; Yoo, Hana; Park, Soojin

2010-05-18

Disposable topographic silicon oxide patterns were fabricated from polymeric replicas of sawtoothed glass surfaces, spin-coating of poly(dimethylsiloxane) (PDMS) thin films, and thermal annealing at certain temperature and followed by oxygen plasma treatment of the thin PDMS layer. A simple imprinting process was used to fabricate the replicated PDMS and PS patterns from sawtoothed glass surfaces. Next, thin layers of PDMS films having different thicknesses were spin-coated onto the sawtoothed PS surfaces and annealed at 60 degrees C to be drawn the PDMS into the valley of the sawtoothed PS surfaces, followed by oxygen plasma treatment to fabricate topographic silicon oxide patterns. By control of the thickness of PDMS layers, silicon oxide patterns having various line widths were fabricated. The silicon oxide topographic patterns were used to direct the self-assembly of polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) block copolymer thin films via solvent annealing process. A highly ordered PS-b-P2VP micellar structure was used to let gold precursor complex with P2VP chains, and followed by oxygen plasma treatment. When the PS-b-P2VP thin films containing gold salts were exposed to oxygen plasma environments, gold salts were reduced to pure gold nanoparticles without changing high degree of lateral order, while polymers were completely degraded. As the width of trough and crest in topographic patterns increases, the number of gold arrays and size of gold nanoparticles are tuned. In the final step, the silicon oxide topographic patterns were selectively removed by wet etching process without changing the arrays of gold nanoparticles.

Examination of Amine-Functionalised Anion-Exchange Membranes for Possible Use in the All-Vanadium Redox Flow Battery

International Nuclear Information System (INIS)

Mallinson, Sarah L.; Varcoe, John R.; Slade, Robert C.T.

2014-01-01

The applicability of amine-functionalised anion-exchange membranes (AEMs) for use in the all-vanadium redox flow battery has been studied. A selection of radiation-grafted aminated membranes functionalised with dimethylamine, trimethylamine or diazabicyclo(2,2,2)octane were extensively tested. The success of each grafting process was confirmed by Raman and infrared spectroscopies, titrimetry and ionic conductivity measurements. The amine-functionalised membranes were found to have poor thermo-oxidative stability and high vanadium cation permeabilities. The results highlight the importance of balancing ionic conductivity with vanadium cation permeability and indicate that amine-based functional groups may not be suitably stable for the membranes to remain true AEMs when in use in the all-vanadium redox flow battery

Long-range dispersion interactions. I. Formalism for two heteronuclear atoms

International Nuclear Information System (INIS)

Zhang, J.-Y.; Mitroy, J.

2007-01-01

A general procedure for systematically evaluating the long-range dispersion interaction between two heteronuclear atoms in arbitrary states is outlined. The C 6 dispersion parameter can always be written in terms of sum rules involving oscillator strengths only and formulas for a number of symmetry cases are given. The dispersion coefficients for excited alkali-metal atoms interacting with the ground-state H and He are tabulated

Lithium-storage Properties of Gallic Acid-Reduced Graphene Oxide and Silicon-Graphene Composites

International Nuclear Information System (INIS)

Xu, Binghui; Zhang, Jintao; Gu, Yi; Zhang, Zhi; Al Abdulla, Wael; Kumar, Nanjundan Ashok; Zhao, X.S.

2016-01-01

Graphene oxide (GO) was de-oxygenated using gallic acid under mild conditions to prepare reduced graphene oxide (RGO). The resultant RGO showed a lithium-ion storage capacity of 1280 mA h g −1 at a current density of 200 mA g −1 after 350 cycles when used as an anode for lithium ion batteries. The RGO was further used to stabilize silicon (Si) nanoparticles to prepare silicon-graphene composite electrode materials. Experimental results showed that a composite electrode prepared with a mass ratio of Si:GO = 1:2 exhibited the best lithium ion storage performance.

Heteronuclear three-dimensional NMR spectroscopy of the inflammatory protein C5a

International Nuclear Information System (INIS)

Zuiderweg, E.R.P.; Fesik, S.W.

1989-01-01

The utility of three-dimensional heteronuclear NMR spectroscopy for the assignment of 1 H and 15 N resonances of the inflammatory protein C5a (MW 8500), uniformly labeled with 15 N, is demonstrated at a protein concentration of 0.7 mM. It is shown that dramatic simplification of the 2D nuclear Overhauser effect spectrum (NOESY) is obtained by editing with respect to the frequency of the 15 N heteronucleus in a third dimension. The improved resolution in the 3D experiment largely facilitates the assignment of protein NMR spectra and allows for the determination of distance constraints from otherwise overlapping NOE cross peaks for purposes of 3D structure determination. The results show that 15 N heteronuclear 3D NMR can facilitate the structure determination of small proteins and promises to be a useful tool for the study of larger systems that cannot be studied by conventional 2D NMR techniques

Heteronuclear three-dimensional NMR spectroscopy of the inflammatory protein C5a

Energy Technology Data Exchange (ETDEWEB)

Zuiderweg, E.R.P.; Fesik, S.W. (Abbott Laboratories, Abbott Park, IL (USA))

1989-03-21

The utility of three-dimensional heteronuclear NMR spectroscopy for the assignment of {sup 1}H and {sup 15}N resonances of the inflammatory protein C5a (MW 8500), uniformly labeled with {sup 15}N, is demonstrated at a protein concentration of 0.7 mM. It is shown that dramatic simplification of the 2D nuclear Overhauser effect spectrum (NOESY) is obtained by editing with respect to the frequency of the {sup 15}N heteronucleus in a third dimension. The improved resolution in the 3D experiment largely facilitates the assignment of protein NMR spectra and allows for the determination of distance constraints from otherwise overlapping NOE cross peaks for purposes of 3D structure determination. The results show that {sup 15}N heteronuclear 3D NMR can facilitate the structure determination of small proteins and promises to be a useful tool for the study of larger systems that cannot be studied by conventional 2D NMR techniques.

The effect of oxidation on physical properties of porous silicon layers for optical applications

Energy Technology Data Exchange (ETDEWEB)

Pirasteh, Parasteh [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Charrier, Joel [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France)]. E-mail: joel.charrier@univ-rennes1.fr; Soltani, Ali [Institut d' Electronique, de Microemectronique et de Nanotechnologie, CNRS-UMR 8520, Cite Scientifique Avenue Poincare, BP 69, 59652 Villeneuve d' Ascq Cedex (France); Haesaert, Severine [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Haji, Lazhar [Laboratoire d' Optronique, CNRS-UMR FOTON 6082, Universite de Rennes 1, ENSSAT Tecnhopole Anticipa, 6 rue de Kerampont, BP 447, 22305 Lannion Cedex (France); Godon, Christine [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France); Errien, Nicolas [Laboratoire de Physique Crystalline, Institut des Materiaux Jean Rouxel, 44322 Nantes Cedex 3 (France)

2006-12-15

In order to understand the optical loss mechanisms in porous silicon based waveguides, structural and optical studies have been performed. Scanning and transmission electron microscopic observations of porous silicon layers are obtained before and after an oxidation process at high temperature in wet O{sub 2}. Pore size and shape of heavily p-type doped Si wafers are estimated and correlated to the optical properties of the material before and after oxidation. The refractive index was measured and compared to that determined by the Bruggeman model.

A model for the formation of lattice defects at silicon oxide precipitates in silicon

International Nuclear Information System (INIS)

Vanhellemont, J.; Gryse, O. de; Clauws, P.

2003-01-01

The critical size of silicon oxide precipitates and the formation of lattice defects by the precipitates are discussed. An expression is derived allowing estimation of self-interstitial emission by spherical precipitates as well as strain build-up during precipitate growth. The predictions are compared with published experimental data. A model for stacking fault nucleation at oxide precipitates is developed based on strain and self-interstitial accumulation during the thermal history of the wafer. During a low-temperature treatment high levels of strain develop. During subsequent high-temperature treatment, excess strain energy in the precipitate is released by self-interstitial emission leading to favourable conditions for stacking fault nucleation

The effects of trichloroethane HCl and ion-implantation on the oxidation rate of silicon

International Nuclear Information System (INIS)

Ahmed, W.; Ahmed, E.

1994-01-01

The thermal oxidation of silicon was studied using a large-scale industrial oxidation system. The characteristics of the oxides resulting from pure hydrogen/oxygen (Hsub(2)/Osub(2)), trichloroethane/oxygen (TCA/Osub(2) and hydrogen chloride/oxygen (HCI/Osub(2)) mixtures are compared. Both HCI and TCA addition to oxygen produced an enhanced oxidation rate. The oxidation rate for TCA/Osub(2) was approximately 30-40% higher than for HCI/Osub(2) mixtures. A molar ratio of TCA/Osub(2) of 1% gives an optimum process for very-large-scale industrial (VLSI) applications. However, 3% HCI/Osub(2) gives comparable results to 1% TCA. In addition, boron and phosphorus implantation are observed to increase the oxidation rate. Phosphorus doping of the silicon yields a higher rate than boron-doped wafers. This behaviour is explained in terms of surface damage and chemistry. It appears that the overall mechanisms governing all these processes are similar. (8 figures, 22 references) (Author)

Oxidation resistance of CrN/(Cr,V)N hard coatings deposited by DC magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Panjan, P., E-mail: peter.panjan@ijs.si [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Drnovšek, A.; Kovač, J.; Gselman, P. [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia); Bončina, T. [University of Maribor, Faculty of Mechanical Engineering, Smetanova 17, 2000 Maribor (Slovenia); Paskvale, S.; Čekada, M.; Kek Merl, D.; Panjan, M. [Jožef Stefan Institute, Jamova 39, 1000 Ljubljana (Slovenia)

2015-09-30

In recent years vanadium-doped hard coatings have become available as possible candidates for self-lubrication at high temperatures. Their low coefficient of friction has mainly been attributed to the formation of the V{sub 2}O{sub 5} phase. However, the formation of vanadium oxides must be controlled by the out-diffusion of vanadium in order to achieve the combination of a low coefficient of friction and good mechanical properties for the protective coatings. In this work the application of a nanolayer of CrN/(Cr,V)N hard coating was proposed as a way to better control the out-diffusion of vanadium, while the topmost chromium oxide layer acts as barrier for the vanadium diffusion. However, the aim of this investigation was not only to focus on the formation of the oxide layer. Special attention was given to the oxidation process that takes place at the growth defects, where we observed a strong diffusion of vanadium taking place. The CrN/(Cr,V)N nanolayer coatings were deposited by DC unbalanced magnetron sputtering in an CC800/9 (CemeCon) industrial unit. The vanadium concentration in the (Cr,V)N layers was varied in the range 1.0–11.5 at.%. - Highlights: • Oxidation processes of CrN/(Cr,V)N nanolayers with vanadium content were investigated. • The CrN/(Cr,V)N hard layers were oxidized at high temperature in O2 atm. • The top chromium oxide layer acts as a diffusion barrier for vanadium ions during oxidation. • Important role of growth defects during the oxidation process is demonstrated.

Oxidation resistance of CrN/(Cr,V)N hard coatings deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Panjan, P.; Drnovšek, A.; Kovač, J.; Gselman, P.; Bončina, T.; Paskvale, S.; Čekada, M.; Kek Merl, D.; Panjan, M.

2015-01-01

In recent years vanadium-doped hard coatings have become available as possible candidates for self-lubrication at high temperatures. Their low coefficient of friction has mainly been attributed to the formation of the V_2O_5 phase. However, the formation of vanadium oxides must be controlled by the out-diffusion of vanadium in order to achieve the combination of a low coefficient of friction and good mechanical properties for the protective coatings. In this work the application of a nanolayer of CrN/(Cr,V)N hard coating was proposed as a way to better control the out-diffusion of vanadium, while the topmost chromium oxide layer acts as barrier for the vanadium diffusion. However, the aim of this investigation was not only to focus on the formation of the oxide layer. Special attention was given to the oxidation process that takes place at the growth defects, where we observed a strong diffusion of vanadium taking place. The CrN/(Cr,V)N nanolayer coatings were deposited by DC unbalanced magnetron sputtering in an CC800/9 (CemeCon) industrial unit. The vanadium concentration in the (Cr,V)N layers was varied in the range 1.0–11.5 at.%. - Highlights: • Oxidation processes of CrN/(Cr,V)N nanolayers with vanadium content were investigated. • The CrN/(Cr,V)N hard layers were oxidized at high temperature in O2 atm. • The top chromium oxide layer acts as a diffusion barrier for vanadium ions during oxidation. • Important role of growth defects during the oxidation process is demonstrated.

Shrinking of silicon nanocrystals embedded in an amorphous silicon oxide matrix during rapid thermal annealing in a forming gas atmosphere

Science.gov (United States)

van Sebille, M.; Fusi, A.; Xie, L.; Ali, H.; van Swaaij, R. A. C. M. M.; Leifer, K.; Zeman, M.

2016-09-01

We report the effect of hydrogen on the crystallization process of silicon nanocrystals embedded in a silicon oxide matrix. We show that hydrogen gas during annealing leads to a lower sub-band gap absorption, indicating passivation of defects created during annealing. Samples annealed in pure nitrogen show expected trends according to crystallization theory. Samples annealed in forming gas, however, deviate from this trend. Their crystallinity decreases for increased annealing time. Furthermore, we observe a decrease in the mean nanocrystal size and the size distribution broadens, indicating that hydrogen causes a size reduction of the silicon nanocrystals.

Selective oxidations on vanadiumoxide containing amorphous mixed oxides (AMM-V) with tert.-butylhydroperoxide

Energy Technology Data Exchange (ETDEWEB)

Deng, Y.; Hunnius, M.; Storck, S.; Maier, W.F. [Max-Planck-Institut fuer Kohlenforschung, Muelheim an der Ruhr (Germany)

1998-12-31

The catalytic oxygen transfer properties of vanadium containing zeolites and vanadium based sol-gel catalysts with hydrogen peroxides are well known. The severe problem of vanadium leaching caused by the presence of the by-product water has been addressed. To avoid any interference with homogeneously catalyzed reactions, our study focusses on selective oxidations in a moisture-free medium with tert.-butylhydroperoxide. We have investigated the catalytic properties of amorphous microporous materials based on SiO{sub 2}, TiO{sub 2}, ZrO{sub 2} and Al{sub 2}O{sub 3} as matrix material and studied the effects of surface polarity on the oxidation of 1-octene and cyclohexane. (orig.)

Strained silicon/silicon germanium heterojunction n-channel metal oxide semiconductor field effect transistors

International Nuclear Information System (INIS)

Olsen, Sarah H.

2002-01-01

Investigations into the performance of strained silicon/silicon-germanium (Si/SiGe) n-channel metal-oxide-semiconductor field effect transistors (MOSFETs) have been carried out. Theoretical predictions suggest that use of a strained Si/SiGe material system with advanced material properties compared with conventional silicon allows enhanced MOSFET device performance. This study has therefore investigated the practical feasibility of obtaining superior electrical performance using a Si/SiGe material system. The MOSFET devices consisted of a strained Si surface channel and were fabricated on relaxed SiGe material using a reduced thermal budget process in order to preserve the strain. Two batches of strained Si/SiGe devices fabricated on material grown by differing methods have been analysed and both showed good transistor action. A correlation of electrical and physical device data established that the electrical device behaviour was closely related to the SiGe material quality, which differed depending on growth technique. The cross-wafer variation in the electrical performance of the strained Si/SiGe devices was found to be a function of material quality, thus the viability of Si/SiGe MOSFET technology for commercial applications has been addressed. Of particular importance was the finding that large-scale 'cross-hatching' roughness associated with relaxed SiGe alloys led to degradation in the small-scale roughness at the gate oxide interface, which affects electrical device performance. The fabrication of strained Si MOSFET devices on high quality SiGe material thus enabled significant performance gains to be realised compared with conventional Si control devices. In contrast, the performance of devices fabricated on material with severe cross-hatching roughness was found to be diminished by the nanoscale oxide interface roughness. The effect of device processing on SiGe material with differing as-grown roughness has been carried out and compared with the reactions

Di-4-octylphenylphosphoric acid as extractant : extraction of vanadium (IV) and beryllium

International Nuclear Information System (INIS)

Gajankush, R.B.

1976-01-01

The extraction of vanadium and beryllium has been studied using di-4-octylphenyl phosphoric acid (DOPPA) as metal extractant. The factors which affect the extraction have been studied in detail. An attempt has been made to clarify the mechanism of extraction and compare the results with those reported for di-2-ethylhexyl phosphoric acid (DEHPA). In the case of vanadium it was found that vanadium (IV) is more suitable for extraction. Synergistic extractionwas observed in the presence of neutral organophosphorous compounds like tri-n-butyl phosphate (TBP), dibutyl butyl phosphate (DBBP) and tri-n-octyl phosphine oxide (TOPO). The possibility of separating vanadium and uranium when they are present together in leach solutions has also been studied. The extraction of beryllium was found to be a slow process. The factors controlling the rate as well as the extent of extraction have been investigated. However, the results showed that in both respects DOPPA is better than DEHPA which was earlier studied by other authors. The separation of aluminium from beryllium has also been studied. (author)

Enzymatic halogenation and oxidation using an alcohol oxidase-vanadium chloroperoxidase cascade

NARCIS (Netherlands)

But, Andrada; Noord, Van Aster; Poletto, Francesca; Sanders, Johan P.M.; Franssen, Maurice C.R.; Scott, Elinor L.

2017-01-01

The chemo-enzymatic cascade which combines alcohol oxidase from Hansenula polymorpha (AOXHp) with vanadium chloroperoxidase (VCPO), for the production of biobased nitriles from amino acids was investigated. In the first reaction H2O2 (and acetaldehyde) are generated from ethanol and oxygen by AOXHp.

Melting technique for vanadium containing steels

Energy Technology Data Exchange (ETDEWEB)

Grishanov, M P; Gutovskij, I B; Vakhrushev, A S

1980-04-28

To descrease cost price of high-quality vanadium steels a method of their melting in open-hearth furnaces with acid lining using slag-metal fraction of vanadium, which is loaded in the content of 2.1-4.7% of melting mass, is suggested. Introduction of slag-metal fraction of vanadium ensures the formation of slag with composition that guarantees the necessary content of vanadium in steel and does not require introduction of expensive vanadium-containing ferroalloys into the melt.

Effect of yttrium on the oxide scale adherence of pre-oxidized silicon-containing heat-resistant alloy

International Nuclear Information System (INIS)

Yan Jingbo; Gao Yimin; Shen Yudi; Yang Fang; Yi Dawei; Ye Zhaozhong; Liang Long; Du Yingqian

2011-01-01

Highlights: → AE experiment shows yttrium has a beneficial effect on the pre-oxidized HP40 alloy. → Yttrium facilitates the formation of internal oxide after 10 h of oxidation. → Internal oxide changes the rupture behaviour of the oxide scale. → Twins form in the internal oxide and improve the binding strength of the scale. - Abstract: This paper investigates the effect of the rare earth element yttrium on the rupture behaviour of the oxide scale on the silicon-containing heat-resistant alloy during cooling. After 10 h of oxidation, yttrium is found to facilitate the formation of internal oxides (silica) at the scale-matrix interface. Due to the twinning observed by scanning transmission electron microscopy (STEM) in silica, the critical strain value for the scale failure can be dramatically improved, and the formation of cracks at the scale-matrix interface is inhibited.

Synthesis of TiO{sub 2} nanoparticles containing Fe, Si, and V using multiple diffusion flames and catalytic oxidation capability of carbon-coated nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Ismail, Mohamed A. [King Abdullah University of Science and Technology (KAUST), Clean Combustion Research Center (Saudi Arabia); Memon, Nasir K., E-mail: nmemon@qf.org.qa [HBKU, Qatar Foundation, Qatar Environment and Energy Research Institute (QEERI) (Qatar); Hedhili, Mohamed N.; Anjum, Dalaver H. [KAUST, Imaging and Characterization Lab (Saudi Arabia); Chung, Suk Ho [King Abdullah University of Science and Technology (KAUST), Clean Combustion Research Center (Saudi Arabia)

2016-01-15

Titanium dioxide (TiO{sub 2}) nanoparticles containing iron, silicon, and vanadium are synthesized using multiple diffusion flames. The growth of carbon-coated (C–TiO{sub 2}), carbon-coated with iron oxide (Fe/C–TiO{sub 2}), silica-coated (Si–TiO{sub 2}), and vanadium-doped (V–TiO{sub 2}) TiO{sub 2} nanoparticles is demonstrated using a single-step process. Hydrogen, oxygen, and argon are utilized to establish the flame, with titanium tetraisopropoxide (TTIP) as the precursor for TiO{sub 2}. For the growth of Fe/C–TiO{sub 2} nanoparticles, TTIP is mixed with xylene and ferrocene. While for the growth of Si–TiO{sub 2} and V–TiO{sub 2}, TTIP is mixed with hexamethyldisiloxane (HMDSO) and vanadium (V) oxytriisopropoxide, respectively. The synthesized nanoparticles are characterized using high-resolution transmission electron microscopy (HRTEM) with energy-filtered TEM for elemental mapping (of Si, C, O, and Ti), X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nitrogen adsorption BET surface area analysis, and thermogravimetric analysis. Anatase is the dominant phase for the C–TiO{sub 2}, Fe/C–TiO{sub 2}, and Si–TiO{sub 2} nanoparticles, whereas rutile is the dominant phase for the V–TiO{sub 2} nanoparticles. For C–TiO{sub 2} and Fe/C–TiO{sub 2}, the nanoparticles are coated with about 3-5-nm thickness of carbon. The iron-based TiO{sub 2} nanoparticles significantly improve the catalytic oxidation of carbon, where complete oxidation of carbon occurs at a temperature of 470 °C (with iron) compared to 610 °C (without iron). Enhanced catalytic oxidation properties are also observed for model soot particles, Printex-U, when mixed with Fe/C-TiO{sub 2}. With regards to Si–TiO{sub 2} nanoparticles, a uniform coating of 3 to 8 nm of silicon dioxide is observed around the TiO{sub 2} particles. This coating mainly occurs due to variance in the chemical reaction rates of the precursors. Finally, with regards

Ellipsometry measurements of thickness of oxide and water layers on spherical and flat silicon surfaces

International Nuclear Information System (INIS)

Kenny, M.J.; Netterfield, R.; Wielunski, L.S.

1998-01-01

Full text: Ellipsometry has been used to measure the thickness of oxide layers on single crystal silicon surfaces, both flat and spherical and also to measure the extent of adsorption of moisture on the surface as a function of partial water vapour pressure. The measurements form part of an international collaborative project to make a precise determination of the Avogadro constant (ΔN A /N A -8 ) which will then be used to obtain an absolute definition of the kilogram, rather than one in terms of an artefact. Typically the native oxide layer on a cleaned silicon wafer is about 2 nm thick. On a polished sphere this oxide layer is typically 8 to 10 nm thick, the increased thickness being attributed to parameters related to the polishing process. Ellipsometry measurements on an 89 mm diameter polished silicon sphere at both VUW and CSIRO indicated a SiO 2 layer at 7 to 10 nm thick. It was observed that this thickness varied regularly. The crystal orientation of the sphere was determined using electron patterns generated from an electron microscope and the oxide layer was then measured through 180 arcs of great circles along (110) and (100) planes. It was observed that the thickness varied systematically with orientation. The minimum thickness was 7.4 nm at the axis (softest direction in silicon) and the greatest thickness was 9.5 nm at the axis (hardest direction in silicon). This is similar to an orientation dependent cubic pattern which has been observed to be superimposed on polished silicon spheres. At VUW, the sphere was placed in an evacuated bell jar and the ellipsometry signal was observed as the water vapour pressure was progressively increased up to saturation. The amount of water vapour adsorbed at saturation was one or two monolayers, indicating that the sphere does not wet

Self-cleaning glass coating containing titanium oxide and silicon

International Nuclear Information System (INIS)

Araujo, A.O. de; Alves, A.K.; Berutti, F.A.; Bergmann, C.P.

2009-01-01

Using the electro spinning technique nano fibers of titanium oxide doped with silicon were synthesized. As precursor materials, titanium propoxide, silicon tetra propoxide and a solution of polyvinylpyrrolidone were used. The non-tissue material obtained was characterized by X-ray diffraction to determine the phase and crystallite size, BET method to determine the surface and SEM to analyze the microstructure of the fibers. After ultrasound dispersion of this material in ethanol, the glass coatings were made by dip-coating methodology. The influence of the removal velocity, the solution composition and the glass surface preparation were evaluated. The film was characterized by the contact angle of a water droplet in its surface. (author)

Ultrathin Oxide Passivation Layer by Rapid Thermal Oxidation for the Silicon Heterojunction Solar Cell Applications

OpenAIRE

Lee, Youngseok; Oh, Woongkyo; Dao, Vinh Ai; Hussain, Shahzada Qamar; Yi, Junsin

2012-01-01

It is difficult to deposit extremely thin a-Si:H layer in heterojunction with intrinsic thin layer (HIT) solar cell due to thermal damage and tough process control. This study aims to understand oxide passivation mechanism of silicon surface using rapid thermal oxidation (RTO) process by examining surface effective lifetime and surface recombination velocity. The presence of thin insulating a-Si:H layer is the key to get high Voc by lowering the leakage current (I0) which improves the efficie...

Theoretical study of the influence of cation vacancies on the catalytic properties of vanadium antimonate

International Nuclear Information System (INIS)

Messina, S.; Juan, A.; Larrondo, S.; Irigoyen, B.; Amadeo, N.

2008-01-01

We have theoretically studied the influence of antimony and vanadium cation vacancies in the electronic structure and reactivity of vanadium antimonate, using molecular orbital methods. From the analysis of the electronic properties of the VSbO 4 crystal structure, we can infer that both antimony and vanadium vacancies increase the oxidation state of closer V cations. This would indicate that, in the rutile-type VSbO 4 phase the Sb and V cations defects stabilize the V in a higher oxidation state (V 4+ ). Calculations of the adsorption energy for different toluene adsorption geometries on the VSbO 4 (1 1 0) surface have also been performed. The oxidation state of Sb, V and O atoms and the overlap population of metal-oxygen bonds have been evaluated. Our results indicate that the cation defects influence in the toluene adsorption reactions is slight. We have computed different alternatives for the reoxidation of the VSbO 4 (1 1 0) surface active sites which were reduced during the oxygenated products formation. These calculations indicate that the V cations in higher oxidation state (V 4+ ) are the species, which preferentially incorporate lattice oxygen to the reduced Sb cations. Thus, the cation defects would stabilize the V 4+ species in the VSbO 4 structure, determining its ability to provide lattice oxygen as a reactant

VANADIUM ALLOYS

Science.gov (United States)

Smith, K.F.; Van Thyne, R.J.

1959-05-12

This patent deals with vanadium based ternary alloys useful as fuel element jackets. According to the invention the ternary vanadium alloys, prepared in an arc furnace, contain from 2.5 to 15% by weight titanium and from 0.5 to 10% by weight niobium. Characteristics of these alloys are good thermal conductivity, low neutron capture cross section, good corrosion resistance, good welding and fabricating properties, low expansion coefficient, and high strength.

Sol-gel growth of vanadium dioxide

International Nuclear Information System (INIS)

Speck, K.R.

1990-01-01

This thesis examines the chemical reactivity of vanadium (IV) tetrakis(t-butoxide) as a precursor for the sol-gel synthesis of vanadium dioxide. Hydrolysis and condensation of the alkoxide was studied by FTIR spectroscopy. Chemical modification of the vanadium tetraalkoxide by alcohol interchange was studied using 51 V NMR and FTIR. Vanadium dioxide thin films and powders were made from vanadium tetrakis(t-butoxide) by standard sol-gel techniques. Post-deposition heating under nitrogen was necessary to transform amorphous gels into vanadium dioxide. Crystallization of films and powders was studied by FTIR, DSC, TGA, and XRD. Gel-derived vanadium dioxide films undergo a reversible semiconductor-to-metal phase transition near 68C, exhibiting characteristic resistive and spectral changes. The electrical resistance decreased by two to three orders of magnitude and the infrared transmission sharply dropped as the material was cycled through this thermally induced phase transition. The sol-gel method was also used to make doped vanadium dioxide films. Films were doped with tungsten and molybdenum ions to effectively lower the temperature at which the transition occurs

Exploring the deposition of oxides on silicon for photovoltaic cells by pulsed laser deposition

NARCIS (Netherlands)

Doeswijk, L.M.; de Moor, Hugo H.C.; Rogalla, Horst; Blank, David H.A.

2002-01-01

Since most commercially available solar cells are still made from silicon, we are exploring the introduction of passivating qualities in oxides, with the potential to serve as an antireflection coating. Pulsed laser deposition (PLD) was used to deposit TiO2 and SrTiO3 coatings on silicon substrates.

One-step preparation and photocatalytic performance of vanadium doped TiO2 coatings

International Nuclear Information System (INIS)

Vasilić, R.; Stojadinović, S.; Radić, N.; Stefanov, P.; Dohčević-Mitrović, Z.; Grbić, B.

2015-01-01

In this paper, we have investigated one-step preparation of vanadium doped TiO 2 coatings formed by plasma electrolytic oxidation (PEO) of titanium in electrolyte containing 10 g/L Na 3 PO 4 ·12H 2 O + 0.5 g/L NH 4 VO 3 . The morphology, phase structure, and elemental composition of the formed coatings were characterized by atomic force microscopy (AFM), x-ray diffraction (XRD), and x-ray photoelectron spectroscopy (XPS) techniques. Ultraviolet–visible diffuse reflectance spectroscopy (UV–Vis DRS) was employed to evaluate the band gap energy of obtained coatings. Vanadium doped TiO 2 coatings are partly crystallized and mainly composed of anatase phase TiO 2 , with up to about 2 wt% of vanadium present in the surface layer of the oxide. The valence band photoelectron spectra and UV–Vis DRS showed that vanadium doped TiO 2 coatings exhibit notable red shift with respect to the pure TiO 2 coatings. The photocatalytic activity was evaluated by monitoring the degradation of methyl orange under simulated sunlight conditions. Photocatalytic activity of vanadium doped TiO 2 coatings increases with PEO time. Prolonged PEO times result in higher roughness of obtained coatings, thus increasing surface area available for methyl orange degradation. Vanadium doped TiO 2 coatings obtained after 180 s of PEO time exhibit the best photocatalytic activity and about 67% of methyl orange is degraded after 12 h of irradiation under simulated sunlight. - Highlights: • One-step preparation of V-doped TiO 2 coatings in 10 g/L Na 3 PO 4 ·12H 2 O + 0.5 g/L NH 4 VO 3 . • Properties of obtained coatings strongly depend on microdischarge characteristics. • Band gap of V-doped TiO 2 coatings is shifted towards red side of the spectrum. • V-doped TiO 2 coatings have better photocatalytic activity than pure TiO 2 . • After 12 h of simulated sunlight irradiation, 67% of methyl orange was decomposed

Characterization of 10 μm thick porous silicon dioxide obtained by complex oxidation process for RF application

International Nuclear Information System (INIS)

Park, Jeong-Yong; Lee, Jong-Hyun

2003-01-01

This paper proposes a 10 μm thick oxide layer structure, which can be used as a substrate for RF circuits. The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500 deg. C, for 1 h at H 2 O/O 2 ) and a rapid thermal oxidation (RTO) process (1050 deg. C, for 1 min). The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide. The leakage current through the OPSL of 10 μm was about 100-500 pA in the range of 0-50 V. The average value of breakdown field was about 3.9 MV cm -1 . From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process were confirmed to be completely oxidized and also the role of RTO process was important for the densification of porous silicon layer (PSL) oxidized at a lower temperature. For the RF-test of Si substrate with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate. The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39 dB at 4 GHz and similar to that of CPW on OPSL prepared by a temperature of 1050 deg. C (1 h at H 2 O/O 2 ). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23 dB at 10 GHz, which is similar to that of CPW on OPSL prepared by high temperature

Recovery of indium-tin-oxide/silicon heterojunction solar cells by thermal annealing

OpenAIRE

Morales Vilches, Ana Belén; Voz Sánchez, Cristóbal; Colina Brito, Mónica Alejandra; López Rodríguez, Gema; Martín García, Isidro; Ortega Villasclaras, Pablo Rafael; Orpella García, Alberto; Alcubilla González, Ramón

2014-01-01

The emitter of silicon heterojunction solar cells consists of very thin hydrogenated amorphous silicon layers deposited at low temperature. The high sheet resistance of this type of emitter requires a transparent conductive oxide layer, which also acts as an effective antireflection coating. The deposition of this front electrode, typically by Sputtering, involves a relatively high energy ion bombardment at the surface that could degrade the emitter quality. The work function of the tra...

Fluorescence and thermoluminescence in silicon oxide films rich in silicon; Fluorescencia y termoluminiscencia en peliculas de oxido de silicio rico en silicio

Energy Technology Data Exchange (ETDEWEB)

Berman M, D.; Piters, T. M. [Centro de Investigacion en Fisica, Universidad de Sonora, Apdo. Postal 5-088, Hermosillo 83190, Sonora (Mexico); Aceves M, M.; Berriel V, L. R. [Instituto Nacional de Astrofisica, Optica y Electronica, Apdo. Postal 51, Puebla 72000, Puebla (Mexico); Luna L, J. A. [CIDS, Benemerita Universidad Autonoma de Puebla, Apdo. Postal 1651, Puebla 72000, Puebla (Mexico)

2009-10-15

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 {omega}-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N{sub 2} at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Iron oxide shell coating on nano silicon prepared from the sand for lithium-ion battery application

Science.gov (United States)

Furquan, Mohammad; Vijayalakshmi, S.; Mitra, Sagar

2018-05-01

Elemental silicon, due to its high specific capacity (4200 mAh g-1) and non-toxicity is expected to be an attractive anode material for Li-ion battery. But its huge expansion volume (> 300 %) during charging of battery, leads to pulverization and cracking in the silicon particles and causes sudden failure of the Li-ion battery. In this work, we have designed yolk-shell type morphology of silicon, prepared from carbon coated silicon nanoparticles soaked in aqueous solution of ferric nitrate and potassium hydroxide. The soaked silicon particles were dried and finally calcined at 800 °C for 30 minutes. The product obtained is deprived of carbon and has a kind of yolk-shell morphology of nano silicon with iron oxide coating (Si@Iron oxide). This material has been tested for half-cell lithium-ion battery configuration. The discharge capacity is found to be ≈ 600 mAh g-1 at a current rate of 1.0 A g-1 for 200 cycles. It has shown a stable performance as anode for Li-ion battery application.

Low temperature plasma-enhanced atomic layer deposition of thin vanadium nitride layers for copper diffusion barriers

Energy Technology Data Exchange (ETDEWEB)

Rampelberg, Geert; Devloo-Casier, Kilian; Deduytsche, Davy; Detavernier, Christophe [Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, B-9000 Ghent (Belgium); Schaekers, Marc [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Blasco, Nicolas [Air Liquide Electronics US, L.P., 46401 Landing Parkway, Fremont, California 94538 (United States)

2013-03-18

Thin vanadium nitride (VN) layers were grown by atomic layer deposition using tetrakis(ethylmethylamino)vanadium and NH{sub 3} plasma at deposition temperatures between 70 Degree-Sign C and 150 Degree-Sign C on silicon substrates and polymer foil. X-ray photoelectron spectroscopy revealed a composition close to stoichiometric VN, while x-ray diffraction showed the {delta}-VN crystal structure. The resistivity was as low as 200 {mu}{Omega} cm for the as deposited films and further reduced to 143 {mu}{Omega} cm and 93 {mu}{Omega} cm by annealing in N{sub 2} and H{sub 2}/He/N{sub 2}, respectively. A 5 nm VN layer proved to be effective as a diffusion barrier for copper up to a temperature of 720 Degree-Sign C.

Activation analysis for measurements of silicon, phosphorus, alkali metals and other elements in high-purity metals

International Nuclear Information System (INIS)

Schmid, W.

1988-01-01

In the present thesis, methods of activation analysis were developed for the determination of the elements silicon, phosphorus, potassium, sodium, i.a. in the high-purity metals vanadium, niobium, tantalum, tungsten, molybdenum and iron. The determination of silicon is based on the activation of samples with reactor neutrons, on a subsequent radiochemical separation of the tracer radionuclide 31 Si resulting from the reaction 30 Si(n,γ), and on the measurement of β activity with the help of a liquid scintillation measuring desk. Since the tracer radionuclide 31 Si almost exclusively emits β rays which are not sufficiently nuclide-specific, silicon was selectively separated from the other sample elements by being distilled as silicon tetrafluoride. The processing of the residue following the separation of silicon permits a complementary gamma-spectroscopic determination of a whole lot of additional elements. Thus, the separation of the nuclide 182 Ta with the anion exchanger Dowex 1X8 from HF/H 2 SO 4 medium permits the determination of 22 elements in vanadium, niobium and tantalum. Phosphorus content is determined by activating the samples with rapid neutrons (cyclotrons) via the reaction 31 P(n,p) 31 Si. (orig./MM) [de

Toward Annealing-Stable Molybdenum-Oxide-Based Hole-Selective Contacts For Silicon Photovoltaics

KAUST Repository

Essig, Stephanie

2018-02-21

Molybdenum oxide (MoOX) combines a high work function with broadband optical transparency. Sandwiched between a hydrogenated intrinsic amorphous silicon passivation layer and a transparent conductive oxide, this material allows a highly efficient hole-selective front contact stack for crystalline silicon solar cells. However, hole extraction from the Si wafer and transport through this stack degrades upon annealing at 190 °C, which is needed to cure the screen-printed Ag metallization applied to typical Si solar cells. Here, we show that effusion of hydrogen from the adjacent layers is a likely cause for this degradation, highlighting the need for hydrogen-lean passivation layers when using such metal-oxide-based carrier-selective contacts. Pre-MoOX-deposition annealing of the passivating a-Si:H layer is shown to be a straightforward approach to manufacturing MoOX-based devices with high fill factors using screen-printed metallization cured at 190 °C.

Thermal processing and native oxidation of silicon nanoparticles

International Nuclear Information System (INIS)

Winters, Brandon J.; Holm, Jason; Roberts, Jeffrey T.

2011-01-01

In this study, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and electron energy loss spectroscopy (EELS) were used to investigate in-air oxidation of silicon nanoparticles ca. 11 nm in diameter. Particle samples were prepared first by extracting them from an RF plasma synthesis reactor, and then heating them in an inert carrier gas stream. The resulting particles had varying surface hydrogen coverages and relative amounts of SiH x (x = 1, 2, and 3), depending on the temperature to which they had been heated. The particles were allowed to oxidize in-air for several weeks. FTIR, XPS, and EELS analyses that were performed during this period clearly establish that adsorbed hydrogen retards oxidation, although in complex ways. In particular, particles that have been heated to intermediate hydrogen coverages oxidize more slowly in air than do freshly generated particles that have a much higher hydrogen content. In addition, the loss of surface hydride species at high processing temperatures results in fast initial oxidation and the formation of a self-limiting oxide layer. Analogous measurements made on deuterium-covered particles show broadly similar behavior; i.e., that oxidation is the slowest at some intermediate coverage of adsorbed deuterium.

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Extraction-complexonometric determination of vanadium(4) in the presence of vanadium(3)

International Nuclear Information System (INIS)

Gordeeva, M.N.; Ryndina, A.M.; Stanevich, T.V.

1976-01-01

The extraction-complexonometric method has been investigated for determining vanadium(4) in the presence of vanadium (3) with high contents of these forms in the solution analyzed. The method of separation of V(4) and V(3) is based on extraction of the ion acetate of vanadium(4) with eriochrome red B(ERCB) and diphenyl quanidinium (DPG) by a mixture of chloroform and isoamyl alcohol (3:1). To control the content of V(4) and V(3) the method of reciprocal complexonometric titration is used (the titrating solution was a solution of thorium nitride, and xylenol orange was a solution of thorium nitride, and xylenol orange was used as metal indicator). Titration has been carried out in an acid solution at pH=2.8. The developed method has been applied to analysis of lithium-zinc spinels containing both forms of vanadium

Passivation mechanism in silicon heterojunction solar cells with intrinsic hydrogenated amorphous silicon oxide layers

Science.gov (United States)

Deligiannis, Dimitrios; van Vliet, Jeroen; Vasudevan, Ravi; van Swaaij, René A. C. M. M.; Zeman, Miro

2017-02-01

In this work, we use intrinsic hydrogenated amorphous silicon oxide layers (a-SiOx:H) with varying oxygen content (cO) but similar hydrogen content to passivate the crystalline silicon wafers. Using our deposition conditions, we obtain an effective lifetime (τeff) above 5 ms for cO ≤ 6 at. % for passivation layers with a thickness of 36 ± 2 nm. We subsequently reduce the thickness of the layers using an accurate wet etching method to ˜7 nm and deposit p- and n-type doped layers fabricating a device structure. After the deposition of the doped layers, τeff appears to be predominantly determined by the doped layers themselves and is less dependent on the cO of the a-SiOx:H layers. The results suggest that τeff is determined by the field-effect rather than by chemical passivation.

Optimization of oxidation processes to improve crystalline silicon solar cell emitters

Directory of Open Access Journals (Sweden)

L. Shen

2014-02-01

Full Text Available Control of the oxidation process is one key issue in producing high-quality emitters for crystalline silicon solar cells. In this paper, the oxidation parameters of pre-oxidation time, oxygen concentration during pre-oxidation and pre-deposition and drive-in time were optimized by using orthogonal experiments. By analyzing experimental measurements of short-circuit current, open circuit voltage, series resistance and solar cell efficiency in solar cells with different sheet resistances which were produced by using different diffusion processes, we inferred that an emitter with a sheet resistance of approximately 70 Ω/□ performed best under the existing standard solar cell process. Further investigations were conducted on emitters with sheet resistances of approximately 70 Ω/□ that were obtained from different preparation processes. The results indicate that emitters with surface phosphorus concentrations between 4.96 × 1020 cm−3 and 7.78 × 1020 cm−3 and with junction depths between 0.46 μm and 0.55 μm possessed the best quality. With no extra processing, the final preparation of the crystalline silicon solar cell efficiency can reach 18.41%, which is an increase of 0.4%abs compared to conventional emitters with 50 Ω/□ sheet resistance.

Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

Energy Technology Data Exchange (ETDEWEB)

Riahi, R., E-mail: riahirim01@gmail.com [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Faculty of Sciences Tunis–El Manar University (Tunisia); Derbali, L. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Ouertani, B. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia); Higher Institute of Environment Science and Technology of Borj-Cedria (Tunisia); Ezzaouia, H. [Laboratory of Semiconductors, Nanostructures and Advanced Technology (LSNTA), Research and Technology Center of Energy, Tourist Road Soliman, BP 95, 2050 Hammam-Lif (Tunisia)

2017-05-15

Highlights: • The treatment of porous silicon (PS) with nickel oxide (NiO) decreases the reflectivity significantly. • FTIR analysis showed a substitution of Si−H bonds to Si−O−Si and Si−O−Ni after the thermal annealing. • Annealing the treated NiO/PS at 400 °C leads to a noticeable improvement of the photoluminescence (PL) intensity. • A blueshift was obtained in the PL spectra due to the decrease of silicon nanocrystallites size after exceeding 400 °C. - Abstract: This paper investigates the effect of Nickel oxide (NiO) on the structural and optical properties of porous silicon (PS). Our investigations showed an obvious improvement of porous silicon optoelectronique properties after coating the PS with NiO thin film as a passivating process. The as-prepared NiO/PS thin film was subjected to a thermal annealing to study the effect of temperature on the efficiency of this treatment. The deposition of NiO onto the porous silicon layer was performed using the spray pyrolysis method. The surface modification of the as-prepared NiO/PS samples was investigated after annealing at various temperatures, using an infrared furnace, ranging between 300 °C and 600 °C. The X-ray Diffraction results showed that obtained films show cubic structure with preferred (200) plane orientation. We found an obvious dependence of the PS nanocrystallites size (nc-Si) to the annealing temperature. Photoluminescence (PL) is directly related to the electronic structure and transitions. The characteristic change of the band gap with decrease in size of the nanostructures can be pointed out by the observed blue shift in the photoluminescence spectra. Nickel oxide treatment of Porous silicon led to a significant increase of photoluminescence with a resulting blue-shift at higher annealing temperature. The surface morphology was examined by scanning electron microscope (SEM), and FTIR spectroscopy was used to study the chemical composition of the films. Moreover, the total

Temperature dependence of nickel oxide effect on the optoelectronic properties of porous silicon

International Nuclear Information System (INIS)

Riahi, R.; Derbali, L.; Ouertani, B.; Ezzaouia, H.

2017-01-01

Highlights: • The treatment of porous silicon (PS) with nickel oxide (NiO) decreases the reflectivity significantly. • FTIR analysis showed a substitution of Si−H bonds to Si−O−Si and Si−O−Ni after the thermal annealing. • Annealing the treated NiO/PS at 400 °C leads to a noticeable improvement of the photoluminescence (PL) intensity. • A blueshift was obtained in the PL spectra due to the decrease of silicon nanocrystallites size after exceeding 400 °C. - Abstract: This paper investigates the effect of Nickel oxide (NiO) on the structural and optical properties of porous silicon (PS). Our investigations showed an obvious improvement of porous silicon optoelectronique properties after coating the PS with NiO thin film as a passivating process. The as-prepared NiO/PS thin film was subjected to a thermal annealing to study the effect of temperature on the efficiency of this treatment. The deposition of NiO onto the porous silicon layer was performed using the spray pyrolysis method. The surface modification of the as-prepared NiO/PS samples was investigated after annealing at various temperatures, using an infrared furnace, ranging between 300 °C and 600 °C. The X-ray Diffraction results showed that obtained films show cubic structure with preferred (200) plane orientation. We found an obvious dependence of the PS nanocrystallites size (nc-Si) to the annealing temperature. Photoluminescence (PL) is directly related to the electronic structure and transitions. The characteristic change of the band gap with decrease in size of the nanostructures can be pointed out by the observed blue shift in the photoluminescence spectra. Nickel oxide treatment of Porous silicon led to a significant increase of photoluminescence with a resulting blue-shift at higher annealing temperature. The surface morphology was examined by scanning electron microscope (SEM), and FTIR spectroscopy was used to study the chemical composition of the films. Moreover, the total

Selective tuning of high-Q silicon photonic crystal nanocavities via laser-assisted local oxidation.

Science.gov (United States)

Chen, Charlton J; Zheng, Jiangjun; Gu, Tingyi; McMillan, James F; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee; Wong, Chee Wei

2011-06-20

We examine the cavity resonance tuning of high-Q silicon photonic crystal heterostructures by localized laser-assisted thermal oxidation using a 532 nm continuous wave laser focused to a 2.5 μm radius spot-size. The total shift is consistent with the parabolic rate law. A tuning range of up to 8.7 nm is achieved with ∼ 30 mW laser powers. Over this tuning range, the cavity Qs decreases from 3.2×10(5) to 1.2×10(5). Numerical simulations model the temperature distributions in the silicon photonic crystal membrane and the cavity resonance shift from oxidation.

Effects of ion implantation on charges in the silicon--silicon dioxide system

International Nuclear Information System (INIS)

Learn, A.J.; Hess, D.W.

1977-01-01

Structures consisting of thermally grown oxide on silicon were implanted with boron, arsenic, or argon ions. For argon implantation through oxides, an increased fixed oxide charge (Q/sub ss/) was observed with the increase being greater for than for silicon. This effect is attributed to oxygen recoil which produces additional excess ionized silicon in the oxide of a type similar to that arising in thermal oxidation. Fast surface state (N/sub st/) generation was also noted which in most cases obscured the Q/sub ss/ increase. Of various heat treatments tested, only a 900 degreeC anneal in hydrogen annihilated N/sub st/ and allowed Q/sub ss/ measurement. Such N/sub st/ apparently arises as a consequence of implantation damage at the silicon--silicon dioxide interface. With the exception of boron implantations into thick oxides or through aluminum electrodes, reduction of the mobile ionic charge (Q/sub o/) was achieved by implantation. The reduction again is presumably damage related and is not negated by high-temperature annealing but may be counterbalanced by aluminum incorporation in the oxide

The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

Science.gov (United States)

Yoo, Hana; Park, Soojin

2010-06-01

We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm × 5 cm.

The fabrication of highly ordered block copolymer micellar arrays: control of the separation distances of silicon oxide dots

Energy Technology Data Exchange (ETDEWEB)

Yoo, Hana; Park, Soojin, E-mail: spark@unist.ac.kr [Interdisciplinary School of Green Energy, Ulsan National Institute of Science and Technology, Banyeon-ri 100, Ulsan 689-798 (Korea, Republic of)

2010-06-18

We demonstrate the fabrication of highly ordered silicon oxide dotted arrays prepared from polydimethylsiloxane (PDMS) filled nanoporous block copolymer (BCP) films and the preparation of nanoporous, flexible Teflon or polyimide films. Polystyrene-block-poly(2-vinylpyridine) (PS-b-P2VP) films were annealed in toluene vapor to enhance the lateral order of micellar arrays and were subsequently immersed in alcohol to produce nano-sized pores, which can be used as templates for filling a thin layer of PDMS. When a thin layer of PDMS was spin-coated onto nanoporous BCP films and thermally annealed at a certain temperature, the PDMS was drawn into the pores by capillary action. PDMS filled BCP templates were exposed to oxygen plasma environments in order to fabricate silicon oxide dotted arrays. By addition of PS homopolymer to PS-b-P2VP copolymer, the separation distances of micellar arrays were tuned. As-prepared silicon oxide dotted arrays were used as a hard master for fabricating nanoporous Teflon or polyimide films by spin-coating polymer precursor solutions onto silicon patterns and peeling off. This simple process enables us to fabricate highly ordered nanoporous BCP templates, silicon oxide dots, and flexible nanoporous polymer patterns with feature size of sub-20 nm over 5 cm x 5 cm.

Characterization of silicon-oxide interfaces and organic monolayers by IR-UV ellipsometry and FTIR spectroscopy

Science.gov (United States)

Hess, P.; Patzner, P.; Osipov, A. V.; Hu, Z. G.; Lingenfelser, D.; Prunici, P.; Schmohl, A.

2006-08-01

VUV-laser-induced oxidation of Si(111)-(1×1):H, Si(100):H, and a-Si:H at 157 nm (F II laser) in pure O II and pure H IIO atmospheres was studied between 30°C and 250°C. The oxidation process was monitored in real time by spectroscopic ellipsometry (NIR-UV) and FTIR spectroscopy. The ellipsometric measurements could be simulated with a three-layer model, providing detailed information on the variation of the suboxide interface with the nature of the silicon substrate surface. Besides the silicon-dioxide and suboxide layer, a dense, disordered, roughly monolayer thick silicon layer was included, as found previously by molecular dynamics calculations. The deviations from the classical Deal-Grove mechanism and the self-limited growth of the ultrathin dioxide layers (TMS) groups and n-alkylthiol monolayers on gold-coated silicon. The C-H stretching vibrations of the methylene and methyl groups could be identified by FTIR spectroscopy and IR ellipsometry.

Structural, physical and electrochemical characteristics of a vanadium oxysulfide, a cathode material for lithium batteries

Science.gov (United States)

Ouvrard, G.; Tchangbédji, G.; Deniard, P.; Prouzet, E.

A vanadium oxysulfide is obtained by a reaction between water solutions of a vanadyl salt and sodium sulfide at room temperature. After drying under mild conditions, the formulation of this phase is V 2O 3S·3H 2O. Thermogravimetric analyses show that it is not possible to remove completely water without losing sulfur. This is in agreement with proton nuclear magnetic resonance experiments which prove that water molecules are tightly bonded to vanadium. Magnetic susceptibility and X-ray absorption spectroscopy measurements allow to define the oxidation states of vanadium and sulfur, (IV) and (-II) respectively. From extended X-ray absorption fine structure spectroscopy at the vanadium K edge and infrared spectroscopy, the local structure around vanadium can be defined as a distorted octahedron, with a vanadyl bond and an opposite sulfur atom. Magnetic susceptibility and X-ray absorption spectroscopy measurements on chemically lithiated compounds show a complex charge transfer from lithium to the host structure upon lithium intercalation. If it appears that vanadium atoms are reduced, a possible role of sulfur atoms in the redox process has to be considered. Cycling tests of lithium batteries whose positive consists of oxysulfide are promising with 70 cycles under a regime of {C}/{8}, without noticeable loss in capacity of 120 Ah/kg.

A novel vanadium oxide deposit for the cathode of asymmetric lithium-ion supercapacitors

Energy Technology Data Exchange (ETDEWEB)

Li, Jing-Mei; Hu, Chi-Chang [Department of Chemical Engineering, National Tsing Hua University, Hsin-Chu (China); Chang, Kuo-Hsin [Department of Chemical Engineering, National Chung Cheng University, Chia-Yi (China)

2010-12-15

Hydrous vanadium oxide (denoted as VO{sub x}.yH{sub 2}O) deposited at 0.4 V shows promising capacitive behavior in aqueous media containing concentrated Li ions. VO{sub x}.yH{sub 2}O annealed in air at 300 C for 1 h shows highly reversible Li-ion intercalation/de-intercalation behavior with specific capacitance reaching ca. 737 and 606 F g{sup -} {sup 1} at 25 and 500 mV s{sup -1} in 12 M LiCl between -0.2 and 0.8 V. In 14 M LiCl, retention of specific capacitance is about 95% when the scan rate is increased from 25 to 500 mV s{sup -} {sup 1}. This work is the first report showing the ultrahigh rate of Li-ion intercalation/de-intercalation in VO{sub x}.yH{sub 2}O. A so-called Li-ion supercapacitor of the asymmetric type consisting of a VO{sub x}.yH{sub 2}O cathode and a WO{sub 3}{sup .}zH{sub 2}O anode is proposed here. (author)

High-stability transparent amorphous oxide TFT with a silicon-doped back-channel layer

Energy Technology Data Exchange (ETDEWEB)

Lee, Hyoung-Rae; Park, Jea-Gun [Hanyang University, Seoul (Korea, Republic of)

2014-10-15

We significantly reduced various electrical instabilities of amorphous indium gallium zinc oxide thin-film transistors (TFTs) by using the co-deposition of silicon on an a-IGZO back channel. This process showed improved stability of the threshold voltage (V{sub th}) under high temperature and humidity and negative gate-bias illumination stress (NBIS) without any reduction of IDS. The enhanced stability was achieved with silicon, which has higher metal-oxide bonding strengths than gallium does. Additionally, SiO{sub x} distributed on the a-IGZO surface reduced the adsorption and the desorption of H{sub 2}O and O{sub 2}. This process is applicable to the TFT manufacturing process with a variable sputtering target.

Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon

International Nuclear Information System (INIS)

Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

1999-01-01

Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors

Synchrotron x-ray reflectivity study of oxidation/passivation of copper and silicon.

Energy Technology Data Exchange (ETDEWEB)

Chu, Y.; Nagy, Z.; Parkhutik, V.; You, H.

1999-07-21

Synchrotron x-ray-scattering technique studies of copper and silicon electrochemical interfaces are reported. These two examples illustrate the application of synchrotron x-ray techniques for oxidation, passivation, and dissolution of metals and semiconductors.

New vanadium oxides with perovskite type structure: AThV/sub 2/O/sub 6/ (A=Ca,Sr)

Energy Technology Data Exchange (ETDEWEB)

Vidyasagar, K; Gopalakrishnan, J

1982-07-01

New perovskite oxides of the formula AThV/sub 2/O/sub 6/ (A=Ca,Sr) have been prepared by reduction of the corresponding AThV/sub 2/O/sub 8/ under hydrogen atmosphere. CaThV/sub 2/O/sub 6/ crystallizes in an orthorhombic LaVO/sub 3/ type structure, while the strontium compound exhibiting cation-deficient nonstoichiometry. SrThsub(1-x)V/sub 2/O/sub 6/ (x approx. 0.4), is cubic. The magnetic susceptibility behaviour of the calcium compound is similar to that of V/sup 3 +/ perovskites, while the strontium compound exhibits a large increase in susceptibility below 130K, the behaviour being likely to be associated with the mixed-valence character of vanadium.

Extraction of Vanadium from Vanadium Slag Via Non-salt Roasting and Ammonium Oxalate Leaching

Science.gov (United States)

Li, Meng; Du, Hao; Zheng, Shili; Wang, Shaona; Zhang, Yang; Liu, Biao; Dreisinger, David Bruce; Zhang, Yi

2017-10-01

A clean method featuring non-salt roasting followed by (NH4)2C2O4 leaching to recover vanadium from vanadium slag was proposed. The carcinogenic Cr6+ compounds and exhaust gases were avoided, and the water generated from vanadate precipitation may be recycled and reused in this new leaching process. The leaching residues may be easily used by a blast furnace. Moreover, (NH4)2C2O4 solution was used as a leaching medium to avoid expensive and complicated ammonium controlling operations as a result of the stability of (NH4)2C2O4 at a high temperature. The transformation mechanisms of vanadium- and chromium-bearing phases were systematically investigated by x-ray diffraction analysis and scanning electron microscopy with energy-disperse x-ray spectrometry, respectively. In addition, the effects of oxygen concentration, roasting temperature, and holding time on vanadium recovery were investigated. Finally, the effects of leaching variables on the vanadium leaching rate were also examined.

Optical properties of zinc–vanadium glasses doped with samarium ...

Indian Academy of Sciences (India)

Abstract. Zinc–vanadium glasses doped with samarium oxide having the chemical composition Sm2O3(x). ZnO(40−x)V2O5(60)(where x = 0·1–0·5 mol%) were prepared by melt quenching method. The density of these glasses was measured by Archimedes method; the corresponding molar volumes have also been ...

The effect of thermal oxidation on the luminescence properties of nanostructured silicon.

Science.gov (United States)

Liu, Lijia; Sham, Tsun-Kong

2012-08-06

Herein is reported a detailed study of the luminescence properties of nanostructured Si using X-ray excited optical luminescence (XEOL) in combination with X-ray absorption near-edge structures (XANES). P-type Si nanowires synthesized via electroless chemical etching from Si wafers of different doping levels and porous Si synthesized using electrochemical method are examined under X-ray excitation across the Si K-, L(3,2) -, and O K-edges. It is found that while as-prepared Si nanostructures are weak light emitters, intense visible luminescence is observed from thermally oxidized Si nanowires and porous Si. The luminescence mechanism of Si upon oxidation is investigated by oxidizing nanostructured Si at different temperatures. Interestingly, the two luminescence bands observed show different response with the variation of absorption coefficient upon Si and O core-electron excitation in elemental silicon and silicon oxide. A correlation between luminescence properties and electronic structures is thus established. The implications of the finding are discussed in terms of the behavior of the oxygen deficient center (OCD) and non-bridging oxygen hole center (NBOHC). Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Silver Vanadium Phosphorous Oxide, Ag(2)VO(2)PO(4): Chimie Douce Preparation and Resulting Lithium Cell Electrochemistry.

Science.gov (United States)

Kim, Young Jin; Marschilok, Amy C; Takeuchi, Kenneth J; Takeuchi, Esther S

2011-08-15

Recently, we have shown silver vanadium phosphorous oxide (Ag(2)VO(2)PO(4), SVPO) to be a promising cathode material for lithium based batteries. Whereas the first reported preparation of SVPO employed an elevated pressure, hydrothermal approach, we report herein a novel ambient pressure synthesis method to prepare SVPO, where our chimie douce preparation is readily scalable and provides material with a smaller, more consistent particle size and higher surface area relative to SVPO prepared via the hydrothermal method. Lithium electrochemical cells utilizing SVPO cathodes made by our new process show improved power capability under constant current and pulse conditions over cells containing cathode from SVPO prepared via the hydrothermal method.

Solution XAS Analysis for Exploring the Active Species in Homogeneous Vanadium Complex Catalysis

Science.gov (United States)

Nomura, Kotohiro; Mitsudome, Takato; Tsutsumi, Ken; Yamazoe, Seiji

2018-06-01

Selected examples in V K-edge X-ray Absorption Near Edge Structure (XANES) analysis of a series of vanadium complexes containing imido ligands (possessing metal-nitrogen double bond) in toluene solution have been introduced, and their pre-edge and the edge were affected by their structures and nature of ligands. Selected results in exploring the oxidation states of the active species in ethylene dimerization/polymerization using homogeneous vanadium catalysts [consisting of (imido)vanadium(V) complexes and Al cocatalysts] by X-ray absorption spectroscopy (XAS) analyses have been introduced. It has been demonstrated that the method should provide more clear information concerning the active species in situ, especially by combination with the other methods (NMR and ESR spectra, X-ray crystallographic analysis, and reaction chemistry), and should be powerful tool for study of catalysis mechanism as well as for the structural analysis in solution.

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

An improved method of preparation of nanoparticular metal oxide catalysts

DEFF Research Database (Denmark)

2014-01-01

The present invention concerns an improved method of preparation of nanoparticular vanadium oxide/anatase titania catalysts having a narrow particle size distribution. In particular, the invention concerns preparation of nanoparticular vanadium oxide/anatase titania catalyst precursors comprising...... combustible crystallization seeds upon which the catalyst metal oxide is coprecipitated with the carrier metal oxide, which crystallization seeds are removed by combustion in a final calcining step....

Effects of dietary vanadium in mallard ducks

Science.gov (United States)

White, D.H.; Dieter, M.P.

1978-01-01

Adult mallard ducks fed 0, 1, 10, or 100 ppm vanadyl sulfate in the diet were sacrificed after 12 wk on treatment; tissues were analyzed for vanadium. No birds died during the study and body weights did not change. Vanadium accumulated to higher concentrations in the bone and liver than in other tissues. Concentrations in bones of hens were five times those in bones of drakes, suggesting an interaction between vanadium and calcium mobilization in laying hens. Vanadium concentrations in most tissues were significantly correlated and increased with treatment level. Lipid metabolism was altered in laying hens fed 100 ppm vanadium. Very little vanadium accumulated in the eggs of laying hens.

Samarium-modified vanadium phosphate catalyst for the selective oxidation of n-butane to maleic anhydride

International Nuclear Information System (INIS)

Wu, Hua-Yi; Wang, Hai-Bo; Liu, Xin-Hua; Li, Jian-Hui; Yang, Mei-Hua; Huang, Chuan-Jing; Weng, Wei-Zheng; Wan, Hui-Lin

2015-01-01

Graphical abstract: The addition of a small amount of Sm into VPO catalyst brought about great changes in its physicochemical properties such as surface area, surface morphology, phase composition and redox property, thus leading to a higher catalytic performance in the selective oxidation of n-butane to maleic anhydride, as compared to the undoped VPO catalyst. - Highlights: • The addition of Sm leads to great changes in the structure of VPO catalyst. • Sm improves performance of VPO for oxidation of n-butane to maleic anhydride. • Catalytic performance is closely related to structure of VPO catalyst. - Abstract: A series of samarium-modified vanadium phosphate catalysts were prepared and studied in selective oxidation of n-butane to maleic anhydride. The catalytic evaluation showed that Sm modification significantly increased the overall n-butane conversion and intrinsic activity. N 2 -adsorption, XRD, SEM, Raman, XPS, EPR and H 2 -TPR techniques were used to investigate the intrinsic difference among these catalysts. The results revealed that the addition of Sm to VPO catalyst can increase the surface area of the catalyst, lead to a significant change in catalyst morphology from plate-like structure into rosette-shape clusters, and largely promote the formation of (VO) 2 P 2 O 7 . All of these were related to the different catalytic performance of Sm-doped and undoped VPO catalysts. The roles of the different VOPO 4 phases and the influence of Sm were also described and discussed

Electrochemical investigation of thermically treated graphene oxides as electrode materials for vanadium redox flow battery

International Nuclear Information System (INIS)

Di Blasi, O.; Briguglio, N.; Busacca, C.; Ferraro, M.; Antonucci, V.; Di Blasi, A.

2015-01-01

Highlights: • Graphene oxide is synthesized at high temperatures in a reducing environment. • Treated graphene oxide-based electrodes are prepared by the wet impregnation method. • Electrochemical performance is evaluated as a function of the physico-chemical properties. - Abstract: Thermically treated graphene oxides (TT-GOs) are synthesized at different temperatures, 100 °C, 150 °C, 200 °C and 300 °C in a reducing environment (20% H 2 /He) and investigated as electrode materials for vanadium redox flow battery (VRFB) applications. The treated graphene oxide-based electrodes are prepared by the wet impregnation method using carbon felt (CF) as support. The main aim is to achieve a suitable distribution of the dispersed graphene oxides on the CF surface in order to investigate the electrocatalytic activity for the VO 2+ /VO 2 + and V 2+ /V 3+ redox reactions in the perspective of a feasible large area electrodes scale-up for battery configuration of practical interest. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) are carried out in a three electrode half-cell to characterize the electrochemical properties of the TT-GO-based electrodes. Physico-chemical characterizations are carried out to corroborate the electrochemical results. The TT-GO sample treated at 100 °C (TT-GO-100) shows the highest electrocatalytic activity in terms of peak to peak separation (ΔE = 0.03 V) and current density intensity (∼0.24 A cm −2 at 30 mV/s) both toward the VO 2+ /VO 2 + and V 2+ /V 3+ redox reactions. This result is correlated to the presence of hydroxyl (−OH) and carboxyl (−COOH) species that act as active sites. A valid candidate is individuated as effective anode and cathode electrode in the perspective of electrodes scale-up for battery configuration of practical interest

A photoemission study of the effectiveness of nickel, manganese, and cobalt based corrosion barriers for silicon photo-anodes during water oxidation

Energy Technology Data Exchange (ETDEWEB)

O' Connor, Robert; Bogan, Justin; McCoy, Anthony; Byrne, Conor; Hughes, Greg [School of Physical Sciences, Dublin City University, Dublin 9 (Ireland)

2016-05-21

Silicon is an attractive material for solar water splitting applications due to its abundance and its capacity to absorb a large fraction of incident solar radiation. However, it has not received as much attention as other materials due to its tendency to oxidize very quickly in aqueous environments, particularly when it is employed as the anode where it drives the oxygen evolution reaction. In recent years, several works have appeared in the literature examining the suitability of thin transition metal oxide films grown on top of the silicon to act as a corrosion barrier. The film should be transparent to solar radiation, allow hole transport from the silicon surface to the electrolyte, and stop the diffusion of oxygen from the electrolyte back to the silicon. In this work, we compare Mn-oxide, Co-oxide, and Ni-oxide thin films grown using physical vapor deposition in order to evaluate which material offers the best combination of photocurrent and corrosion protection. In addition to the electrochemical data, we also present a detailed before-and-after study of the surface chemistry of the films using x-ray photoelectron spectroscopy. This approach allows for a comprehensive analysis of the mechanisms by which the corrosion barriers protect the underlying silicon, and how they degrade during the water oxidation reaction.

Study of oxide facing at silicone detectors of ionization detectors

International Nuclear Information System (INIS)

Kopestansky, J.; Tykva, R.

1999-01-01

Formation of oxide facing on silicone in discrete phases of technological preparation of detectors and interaction of gold (aluminium) steamed with SiO x layer were studied. The homogeneity of Au and Si) x layers and interface Au-SiO x and SiO x -Si were examined. The methods SIMS, and partially XPS, AES and RBS were used

Hexagonal mesoporous titanosilicates as support for vanadium oxide-Promising catalysts for the oxidative dehydrogenation of n-butane

Czech Academy of Sciences Publication Activity Database

Setnička, M.; Čičmanec, P.; Bulánek, R.; Zukal, Arnošt; Pastva, Jakub

2013-01-01

Roč. 204, APR 2013 (2013), s. 132-139 ISSN 0920-5861 R&D Projects: GA ČR GAP106/10/0196 Institutional support: RVO:61388955 Keywords : mesoporous titanosilicate * hexagonal mesoporous structure * vanadium Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.309, year: 2013

Efficient Separation and Extraction of Vanadium and Chromium in High Chromium Vanadium Slag by Selective Two-Stage Roasting-Leaching