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Sample records for valence band xps

  1. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    International Nuclear Information System (INIS)

    Kozyukhin, S.; Golovchak, R.; Kovalskiy, A.; Shpotyuk, O.; Jain, H.

    2011-01-01

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As x Se 100−x , As x S 100−x , Ge x Se 100−x and Ge x S 100−x chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  2. Valence band structure of binary chalcogenide vitreous semiconductors by high-resolution XPS

    Energy Technology Data Exchange (ETDEWEB)

    Kozyukhin, S., E-mail: sergkoz@igic.ras.ru [Russian Academy of Science, Institute of General and Inorganic Chemistry (Russian Federation); Golovchak, R. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Kovalskiy, A. [Lehigh University, Department of Materials Science and Engineering (United States); Shpotyuk, O. [Lviv Scientific Research Institute of Materials of SRC ' Carat' (Ukraine); Jain, H. [Lehigh University, Department of Materials Science and Engineering (United States)

    2011-04-15

    High-resolution X-ray photoelectron spectroscopy (XPS) is used to study regularities in the formation of valence band electronic structure in binary As{sub x}Se{sub 100-x}, As{sub x}S{sub 100-x}, Ge{sub x}Se{sub 100-x} and Ge{sub x}S{sub 100-x} chalcogenide vitreous semiconductors. It is shown that the highest occupied energetic states in the valence band of these materials are formed by lone pair electrons of chalcogen atoms, which play dominant role in the formation of valence band electronic structure of chalcogen-rich glasses. A well-expressed contribution from chalcogen bonding p electrons and more deep s orbitals are also recorded in the experimental valence band XPS spectra. Compositional dependences of the observed bands are qualitatively analyzed from structural and compositional points of view.

  3. Chemical state analysis of heat-treated 6, 13-bis(triisopropylsilylethynyl) pentacene investigated by XPS valence band spectra, XANES spectra and first-principles calculation

    International Nuclear Information System (INIS)

    Muro, Maiko; Natsume, Yutaka; Kikuma, Jun; Setoyama, Hiroyuki

    2014-01-01

    X-ray photoelectron spectroscopy (XPS) valence band spectra reflect the chemical bonding states. To take this advantage, we tried to interpret experimental spectra by the occupied density of states (DOS) based on first principles calculation. In this work, we discussed XPS and X-ray Absorption Near Edge Structure (XANES) spectra of 6, 13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pen), which is well known as an organic semiconductor. We studied chemical structure change of TIPS-Pen caused by heat-treatment at 300degC under nitrogen and under the air. It has been suggested that the structural change of pentacene skeleton by Diels-Alder type reaction occurs in both cases. In addition, the sample heat-treated under the air showed desorption of the isopropyl group and increase of oxygen concentration. (author)

  4. Relaxation and cross section effects in valence band photoemission spectroscopy

    International Nuclear Information System (INIS)

    McFeely, F.R.

    1976-09-01

    Various problems relating to the interpretation of valence band x-ray photoemission (XPS) spectra of solids are discussed. The experiments and calculations reported herein deal with the following questions: (1) To what extent do many-body effects manifest themselves in an XPS valence band spectrum, and thus invalidate a direct comparison between the photoemission energy distribution, I(E), and the density of states, N(E), calculated on the basis of ground-state one-electron theory. (2) The effect of the binding-energy-dependent photoemission cross section on I(E) at XPS energies. (3) In favorable cases indicated by (1) and (2) we examine the effect of the interaction of the crystal field with the apparent spin-orbit splittings of core levels observed in XPS spectra. (4) The use of tight binding band structure calculations to parameterize the electronic band structure from XPS and other data is described. (5) The use of high energy angle-resolved photoemission on oriented single crystals to gain orbital symmetry information is discussed. (6) The evolution of the shape of the photoemission energy distribution (of polycrystalline Cu) as a function of photon energy from 50 less than or equal h ω less than or equal 175 is discussed

  5. Hole energy and momentum distributions in valence bands

    International Nuclear Information System (INIS)

    Laan, G. van der.

    1982-01-01

    In order to understand the electrical and magnetic properties of solids, the knowledge of the density of states and the dispersion relation of the valence bands is indispensable. This thesis offers some alternative methods to obtain information about the nature of the valence band. Part A deals with the energy distribution of the photoelectrons. A simple model, which explains the core hole satellite structure in compounds with large correlation effects between the valence band holes and the created photo-hole, is outlined. CuCl, CuX 2 (X = F Cl and Br) are studied, by photoemission and Auger electron spectroscopies in determining the valence band properties. Part B deals with the simultaneous measurement of the energy and the wave vector of the emitted electrons. A practical example is given for the determination of the dispersion relation in copper. The measurements of a surface resonance band and the distribution of the secondary electrons are also reported. (Auth.)

  6. Optical verification of the valence band structure of cadmium arsenide

    NARCIS (Netherlands)

    Gelten, M.J.; Es, van C.M.; Blom, F.A.P.; Jongeneelen, J.W.F.

    1980-01-01

    Optical absorption measurements were performed on thin single crystalline samples of Cd3As2 at temperatures of 300 K and 10 K. At low temperature the interband absorption coefficient shows clearly two steps due to direct transitions from the heavy hole and light hole valence bands to the conduction

  7. Valence band photoemission studies of clean metals

    International Nuclear Information System (INIS)

    Wehner, P.S.

    1978-04-01

    The application of Angle-Resolved Photoelectron Spectroscopy (ARPES) to crystalline solids and the utilization of such studies to illuminate several questions concerning the detailed electronic structure of such materials, are discussed. Specifically, by construction of a Direct Transition (DT) model and the utilization of energy-dependent angle-resolved normal photoemission in the photon energy range 32 eV < or = hν < or = 200 eV, the bulk band structure of copper is experimentally mapped out along three different directions in the Brillouin Zone; GAMMA to K, GAMMA to L, and GAMMA to X. In addition, various effects which influence the obtainable resolution in vector k-space, namely, thermal disorder, momentum broadening, and band mixing, are discussed and are shown to place severe limitations on the applicability of the DT model. Finally, a model for Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS) based on the symmetry of the initial-state wavefunctions is presented and compared to experimental results obtained from copper single crystals

  8. Measurement of valence band structure in arbitrary dielectric films

    International Nuclear Information System (INIS)

    Uhm, Han S.; Choi, Eun H.

    2012-01-01

    A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

  9. Spectroscopic determination of valence band parameters in InP

    International Nuclear Information System (INIS)

    Lewis, R.A.; Lough, B.C.C.

    2003-01-01

    Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

  10. Determination of the impact of Bi content on the valence band energy of GaAsBi using x-ray photoelectron spectroscopy

    Directory of Open Access Journals (Sweden)

    K. Collar

    2017-07-01

    Full Text Available We investigate the change of the valence band energy of GaAs1-xBix (0XPS. The change in the valence band energy per addition of 1 % Bi is determined for strained and unstrained thin films using a linear approximation applicable to the dilute regime. Spectroscopic ellipsometry (SE was used as a complementary technique to determine the change in GaAsBi bandgap resulting from Bi addition. Analysis of SE and XPS data together supports the conclusion that ∼75% of the reduction in the bandgap is in the valence band for a compressively strained, dilute GaAsBi thin film at room temperature.

  11. Determination of valence band parameters in ZnTe

    Energy Technology Data Exchange (ETDEWEB)

    Froehlich, D.; Noethe, A.; Reimann, K. (Duesseldorf Univ. (Germany, F.R.). Physikalisches Inst. - Lehrstuhl 2)

    1984-10-01

    The fine structure of the 2P exciton in ZnTe is studied by two-photon-absorption. The energy splitting into four states, caused by the envelope-hole coupling, allows the determination of the Luttinger parameters ..gamma../sub 2/ and ..gamma../sub 3/, which describe the complex valence band. ..gamma../sub 2/ = 0.8 and ..gamma../sub 3/ = 1.7 are obtained. These values are compared to results of other experiments mainly on 1S excitons.

  12. Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

    Energy Technology Data Exchange (ETDEWEB)

    Jiao, Wenyuan, E-mail: wyjiaonju@gmail.com; Kong, Wei; Li, Jincheng; Kim, Tong-Ho; Brown, April S. [Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 (United States); Collar, Kristen [Department of Physics, Duke University, Durham, NC, 27708 (United States); Losurdo, Maria [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy)

    2016-03-15

    Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In{sub 0.18}Al{sub 0.82}N, 0.15 eV for In{sub 0.17}Al{sub 0.83}N, and 0.23 eV for In{sub 0.098}Al{sub 0.902}N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.

  13. Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

    Directory of Open Access Journals (Sweden)

    Wenyuan Jiao

    2016-03-01

    Full Text Available Angle-resolved X-ray photoelectron spectroscopy (XPS is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.

  14. Valence band electronic structure of Pd based ternary chalcogenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

    2016-12-15

    Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

  15. Effect of laser irradiation on the structure and valence states of copper in Cu-phosphate glass by XPS studies

    International Nuclear Information System (INIS)

    Khattak, G.D.; Mekki, A.; Gondal, M.A.

    2010-01-01

    The effect of laser irradiation using three different wavelengths (IR, visible and UV) generated from Nd:YAG laser on the local glass structure as well as on the valence state of the copper ions in copper phosphate glass containing CuO with the nominal composition 0.30(CuO)-(0.70)(P 2 O 5 ), has been investigated by X-ray photoelectron spectroscopy (XPS). The presence of asymmetry and satellite peaks in the Cu 2p spectrum for the unirradiated sample is an indication of the presence of two different valence states, Cu 2+ and Cu + . Hence, the Cu 2p 3/2 spectrum was fitted to two Gaussian-Lorentzian peaks and the corresponding ratio, Cu 2+ /Cu total , determined from these relative areas clearly shows that copper ions exist predominately (>86%) in the Cu 2+ state for the unirradiated glass sample under investigation. For the irradiated samples the symmetry and the absence of satellite peaks in the Cu 2p spectra indicate the existence of the copper ions mostly in Cu + state. The O 1s spectra show slight asymmetry for the irradiated as well as unirradiated glass samples which result from two contributions, one from the presence of oxygen atoms in the P-O-P environment (bridging oxygen BO) and the other from oxygen in an P-O-Cu and P=O environment (non-bridging oxygen NBO). The ratio of NBO to total oxygen was found to increase with laser power.

  16. Valence band structure of PDMS surface and a blend with MWCNTs: A UPS and MIES study of an insulating polymer

    Energy Technology Data Exchange (ETDEWEB)

    Schmerl, Natalya M.; Khodakov, Dmitriy A.; Stapleton, Andrew J.; Ellis, Amanda V.; Andersson, Gunther G., E-mail: gunther.andersson@flinders.edu.au

    2015-10-30

    Graphical abstract: - Highlights: • Valence electron spectroscopy was performed on an insulating polymer using different charge compensation methods. • MWCNT were embedded in PDMS and found to be the most effective method for reducing the charging of the insulating polymer. • The valence band spectrum of PDMS was obtained via MIES and UPS. • Ion scattering spectroscopy was used to determine the concentration depth profile of the PDMS in the sample. - Abstract: The use of polydimethylsiloxane (PDMS) is increasing with new technologies working toward compact, flexible and transparent devices for use in medical and microfluidic systems. Electronic characterization of PDMS and other insulating materials is difficult due to charging, yet necessary for many applications where the interfacial structure is vital to device function or further modification. The outermost layer in particular is of importance as this is the area where chemical reactions such as surface functionalization will occur. Here, we investigate the valence band structure of the outermost layer and near surface area of PDMS through the use of metastable induced photoelectron spectroscopy (MIES) paired with ultraviolet photoelectron spectroscopy (UPS). The chemical composition of the samples under investigation were measured via X-ray photoelectron spectroscopy (XPS), and the vertical distribution of the polymer was shown with neutral impact collision ion scattering spectroscopy (NICISS). Three separate methods for charge compensation are used for the samples, and their effectiveness is compared.

  17. Determination of the valence-band offset of CdS/CIS solar cell devices by target factor analysis

    Energy Technology Data Exchange (ETDEWEB)

    Niles, D.W.; Contreras, M.; Ramanathan, K.; Noufi, R. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    X-ray photoemission spectroscopy (XPS) is used to determine and compare the valence-band offsets ({Delta}E{sub v}) for CdS grown by chemical bath deposition on single-crystal and thin-film CuInSe{sub 2} (CIS). The thin-film CIS device was suitable for photovoltaic energy production. By sputtering through the CdS/CIS interface and reducing the depth profile with target factor analysis, the magnitude of {Delta}E{sub v} was determined to be {Delta}E{sub v} = 1.06 {+-} 0.15 eV for both the single-crystal and thin-film interfaces. This determination of {Delta}E{sub v} is about 0.25 eV larger than many previously reported estimations CdS grown by physical vapor deposition on CIS and helps explain the record performance of CdS/CIS photovoltaic devices.

  18. Theory of two-photon absorption by exciton states in cubic semiconductors with degenerate valence bands

    International Nuclear Information System (INIS)

    Nguyen Ai Viet; Nguyen Toan Thang.

    1987-06-01

    The coefficient of the absorption of two polarized photons is calculated for direct band gap semiconductors with degenerate valence bands. Wannier-Mott exciton states are included in both the intermediate and final states. Numerical calculations are performed for ZnSe and are compared with Sondergeld's experimental and theoretical results. (author). 11 refs, 2 tabs

  19. Determination of conduction and valence band electronic structure ...

    Indian Academy of Sciences (India)

    shifts in the rutile Ti d-band to lower energy with respect to anatase, i.e., ... requires excitation with UV light due to its wide band ... RIXS maps were compared to the theoretical results .... optical methods are insufficient, such as dark samples.

  20. Electronic structures and valence band splittings of transition metals doped GaNs

    International Nuclear Information System (INIS)

    Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

    2007-01-01

    For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

  1. The Synthesis of NiO/TiO2 Heterostructures and Their Valence Band Offset Determination

    Directory of Open Access Journals (Sweden)

    Z. H. Ibupoto

    2014-01-01

    Full Text Available In this work, a heterojunction based on p-type NiO/n-type TiO2 nanostructures has been prepared on the fluorine doped tin oxide (FTO glass substrate by hydrothermal method. Scanning electron microscopy (SEM and X-Ray diffraction techniques were used for the morphological and crystalline arrays characterization. The X-ray photoelectron spectroscopy was employed to determine the valence-band offset (VBO of the NiO/TiO2 heterojunction prepared on FTO glass substrate. The core levels of Ni 2p and Ti 2p were utilized to align the valence-band offset of p-type NiO/n-type TiO2 heterojunction. The valence band offset was found to be ∼0.41 eV and the conduction band was calculated about ∼0.91 eV. The ratio of conduction band offset and the valence-band offset was found to be 2.21.

  2. Atomic contributions to the valence band photoelectron spectra of metal-free, iron and manganese phthalocyanines

    Energy Technology Data Exchange (ETDEWEB)

    Bidermane, I., E-mail: ieva.bidermane@physics.uu.se [Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala (Sweden); Institut des Nanosciences de Paris, UPMC Univ. Paris 06, CNRS UMR 7588, F-75005 Paris (France); Brumboiu, I.E. [Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala (Sweden); Totani, R. [Department of Physical and Chemical Sciences, University of L’Aquila, Via Vetoio, Coppito, I-67010 L’Aquila (Italy); Grazioli, C. [CNR-IOM, Laboratorio TASC, ss. 14 km. 163.5, Basovizza, 34149 Trieste (Italy); Departement of Chemical and Pharmaceutical Sciences, University of Trieste (Italy); Shariati-Nilsson, M.N.; Herper, H.C.; Eriksson, O.; Sanyal, B. [Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala (Sweden); Ressel, B. [University of Nova Gorica, Vipavska Cesta 11c, 5270 Ajdovščina (Slovenia); Simone, M. de [CNR-IOM, Laboratorio TASC, ss. 14 km. 163.5, Basovizza, 34149 Trieste (Italy); Lozzi, L. [Department of Physical and Chemical Sciences, University of L’Aquila, Via Vetoio, Coppito, I-67010 L’Aquila (Italy); Brena, B.; Puglia, C. [Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala (Sweden)

    2015-11-15

    Highlights: • In detail comparison between the valence band structure of H{sub 2}Pc, FePc and MnPc. • Comparison between the gas phase samples and thin evaporated films on Au (1 1 1). • Detailed analysis of the atomic orbital contributions to the valence band features. • DFT/HSE06 study of the valence band electronic structure of H{sub 2}Pc, FePc and MnPc. - Abstract: The present work reports a photoelectron spectroscopy study of the low-energy region of the valence band of metal-free phthalocyanine (H{sub 2}Pc) compared with those of iron phthalocyanine (FePc) and manganese phthalocyanine (MnPc). We have analysed in detail the atomic orbital composition of the valence band both experimentally, by making use of the variation in photoionization cross-sections with photon energy, and theoretically, by means of density functional theory. The atomic character of the Highest Occupied Molecular Orbital (HOMO), reflected on the outermost valence band binding energy region, is different for MnPc as compared to the other two molecules. The peaks related to the C 2p contributions, result in the HOMO for H{sub 2}Pc and FePc and in the HOMO-1 for MnPc as described by the theoretical predictions, in very good agreement with the experimental results. The DFT simulations, discerning the atomic contribution to the density of states, indicate how the central metal atom interacts with the C and N atoms of the molecule, giving rise to different partial and total density of states for these three Pc molecules.

  3. Location of the valence band maximum in the band structure of anisotropic 1 T'-ReSe2

    Science.gov (United States)

    Eickholt, P.; Noky, J.; Schwier, E. F.; Shimada, K.; Miyamoto, K.; Okuda, T.; Datzer, C.; Drüppel, M.; Krüger, P.; Rohlfing, M.; Donath, M.

    2018-04-01

    Transition-metal dichalcogenides (TMDCs) are a focus of current research due to their fascinating optical and electronic properties with possible technical applications. ReSe2 is an interesting material of the TMDC family, with unique anisotropic properties originating from its distorted 1 T structure (1 T '). To develop a fundamental understanding of the optical and electric properties, we studied the underlying electronic structure with angle-resolved photoemission (ARPES) as well as band-structure calculations within the density functional theory (DFT)-local density approximation (LDA) and GdW approximations. We identified the Γ ¯M¯1 direction, which is perpendicular to the a axis, as a distinct direction in k space with the smallest bandwidth of the highest valence band. Using photon-energy-dependent ARPES, two valence band maxima are identified within experimental limits of about 50 meV: one at the high-symmetry point Z , and a second one at a non-high-symmetry point in the Brillouin zone. Thus, the position in k space of the global valence band maximum is undecided experimentally. Theoretically, an indirect band gap is predicted on a DFT-LDA level, while quasiparticle corrections lead to a direct band gap at the Z point.

  4. Valence band variation in Si (110) nanowire induced by a covered insulator

    International Nuclear Information System (INIS)

    Hong-Hua, Xu; Xiao-Yan, Liu; Yu-Hui, He; Gang, Du; Ru-Qi, Han; Jin-Feng, Kang; Chun, Fan; Ai-Dong, Sun

    2010-01-01

    In this work, we investigate strain effects induced by the deposition of gate dielectrics on the valence band structures in Si (110) nanowire via the simulation of strain distribution and the calculation of a generalized 6×6k·p strained valence band. The nanowire is surrounded by the gate dielectric. Our simulation indicates that the strain of the amorphous SiO 2 insulator is negligible without considering temperature factors. On the other hand, the thermal residual strain in a nanowire with amorphous SiO 2 insulator which has negligible lattice misfit strain pushes the valence subbands upwards by chemical vapour deposition and downwards by thermal oxidation treatment. In contrast with the strain of the amorphous SiO 2 insulator, the strain of the HfO 2 gate insulator in Si (110) nanowire pushes the valence subbands upwards remarkably. The thermal residual strain by HfO 2 insulator contributes to the up-shifting tendency. Our simulation results for valence band shifting and warping in Si nanowires can provide useful guidance for further nanowire device design. (classical areas of phenomenology)

  5. Rotational bands terminating at maximal spin in the valence space

    Energy Technology Data Exchange (ETDEWEB)

    Ragnarsson, I.; Afanasjev, A.V. [Lund Institute of Technology (Sweden)

    1996-12-31

    For nuclei with mass A {le} 120, the spin available in {open_quotes}normal deformation configurations{close_quotes} is experimentally accessible with present detector systems. Of special interest are the nuclei which show collective features at low or medium-high spin and where the corresponding rotational bands with increasing spin can be followed in a continuous way to or close to a non-collective terminating state. Some specific features in this context are discussed for nuclei in the A = 80 region and for {sup 117,118}Xe.

  6. Giant Cu 2p Resonances in CuO Valence-Band Photoemission

    NARCIS (Netherlands)

    Tjeng, L.H.; Chen, C.T.; Ghijsen, J.; Rudolf, P.; Sette, F.

    1991-01-01

    We report the observation of a giant resonance in the Cu 2p resonant-photoemission spectra of CuO. The study allows the unambiguous identification of the local Cu 3d8 configuration in the valence-band photoemission spectrum, providing conclusive evidence for the charge-transfer nature of the

  7. Tunneling emission of electrons from semiconductors' valence bands in high electric fields

    International Nuclear Information System (INIS)

    Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

    2006-01-01

    Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

  8. Valence Band Structure of InAs1-xBix and InSb1-xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Directory of Open Access Journals (Sweden)

    D. P. Samajdar

    2014-01-01

    Full Text Available The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1-xBix and InSb1-xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E+ levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E− energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  9. Systematic study on intermolecular valence-band dispersion in molecular crystalline films

    International Nuclear Information System (INIS)

    Yamane, Hiroyuki; Kosugi, Nobuhiro

    2015-01-01

    Highlights: • Intermolecular valence-band dispersion of crystalline films of phthalocyanines. • Intermolecular transfer integral versus lattice constant. • Site-specific intermolecular interaction and resultant valence-band dispersion. • Band narrowing effect induced by elevated temperature. - Abstract: Functionalities of organic semiconductors are governed not only by individual properties of constituent molecules but also by solid-state electronic states near the Fermi level such as frontier molecular orbitals, depending on weak intermolecular interactions in various conformations. The individual molecular property has been widely investigated in detail; on the other hand, the weak intermolecular interaction is difficult to investigate precisely due to the presence of the structural and thermal energy broadenings in organic solids. Here we show quite small but essential intermolecular valence band dispersions and their temperature dependence of sub-0.1-eV scale in crystalline films of metal phthalocyanines (H_2Pc, ZnPc, CoPc, MnPc, and F_1_6ZnPc) by using angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. The observed bands show intermolecular and site dependent dispersion widths, phases, and periodicities, for different chemical substitution of terminal groups and central metals in the phthalocyanine molecule. The precise and systematic band-dispersion measurement would be a credible approach toward the comprehensive understanding of intermolecular interactions and resultant charge transport properties as well as their tuning by substituents in organic molecular systems.

  10. Crossover and valence band Kβ X-rays of chromium oxides

    International Nuclear Information System (INIS)

    Fazinic, Stjepko; Mandic, Luka; Kavcic, Matjaz; Bozicevic, Iva

    2011-01-01

    Kβ X-ray spectra of chromium metal and selected chromium oxides were measured twice using medium resolution flat crystal spectrometer and high resolution spectrometer employing Johansson geometry after excitation with 2 MeV proton beams. The positions and intensities of crossover (Kβ'') and valence (Kβ 2,5 ) band X-rays relative to the primary Kβ X-ray components were extracted in a consistent way. The results were compared with the existing data obtained by proton and photon induced ionization mechanisms and theoretical predictions. The obtained results in peak relative positions and intensities were analyzed in order to study dependence on the chromium oxidation states and chromium-oxygen bond lengths in selected chromium oxides. Our results obtained by both spectrometers confirm that the linear trend observed for the valence peak relative energy shift as a function of chromium oxidation number does not depend on the experimental resolution. Experimental results for normalized intensities (i.e. relative intensities divided with the number of chromium-oxygen pairs) of crossover and valence band X-rays obtained by both spectrometers are in very good agreement, and follow exponential relationship with the average Cr-O bond lengths in corresponding chromium oxides. The observed trends in crossover and valence X-rays normalized intensities could be used to measure the average chromium-oxygen bond length in various chromium oxides, with the sum of both crossover and valence X-ray normalized intensities being the most sensitive measure.

  11. Nature of the valence band states in Bi2(Ca, Sr, La)3Cu2O8

    International Nuclear Information System (INIS)

    Wells, B.O.; Lindberg, P.A.P.; Shen, Z.; Dessau, D.S.; Spicer, W.E.; Lindau, I.; Mitzi, D.B.; Kapitulnik, A.

    1990-01-01

    We have used photoemission spectroscopy to examine the symmetry of the occupied states of the valence band for the La doped superconductor Bi 2 (Ca, Sr, La) 3 Cu 2 O 8 . While the oxygen states near the bottom of the 7 eV wide valence band exhibit predominantly O 2p z symmetry, the states at the top of the valence band extending to the Fermi level are found to have primarily O 2p x and O 2p y character. We have also examined anomalous intensity enhancements in the valence band feature for photon energies near 18 eV. These enhancements, which occur at photon energies ranging from 15.8 to 18.0 eV for the different valence band features, are not consistent with either simple final state effects or direct O2s transitions to unoccupied O2p states

  12. Instanton contributions to the valence band of the double Sine-Gordon potential

    International Nuclear Information System (INIS)

    Ricotta, R.M.; Escobar, C.O.

    1982-01-01

    The energy dispersion relation for the valence band of the double sine-Gordon potential is calculated, approximating the tunneling amplitude by a sum of contributions of multi-instantons and anti-instatons trajectories. The interesting feature of this potential is that they have to deal with two types of instantons, as there are two different potential barriers within one period of the potential. The results with the standard WKB approximation are compared. (Author) [pt

  13. Accounting for many-body correlation effects in the calculation of the valence band photoelectron emission spectra of ferromagnets

    International Nuclear Information System (INIS)

    Minar, J.; Chadov, S.; Ebert, H.; Chioncel, L.; Lichtenstein, A.; De Nadai, C.; Brookes, N.B.

    2005-01-01

    The influence of dynamical correlation effects on the valence band photoelectron emission of ferromagnetic Fe, Co and Ni has been investigated. Angle-resolved as well as angle-integrated valence band photoelectron emission spectra were calculated on the basis of the one-particle Green's function, which was obtained by using the fully relativistic Korringa-Kohn-Rostoker method. The correlation effects have been included in terms of the electronic self-energy which was calculated self-consistently within Dynamical Mean-Field Theory (DMFT). In addition a theoretical approach to calculate high-energy angle-resolved valence band photoelectron emission spectra is presented

  14. On the theory of phonoriton in cubic semiconductors with a degenerate valence band

    International Nuclear Information System (INIS)

    Nguyen Ai Viet; Nguyen Thi Que Huong; Le Qui Thong

    1992-10-01

    The ''phonoriton'' is an elementary excitation constructed from an exciton polariton and phonon in semiconductors under intense excitation by an electromagnetic wave near the exciton resonance (L.V. Keldysh and A.L. Ivanov, 1982). In this paper we develop a theory of phonoriton in direct band gap cubic semiconductor with a degenerate valence band using the simple model of J.L. Birman and B.S. Wang (1990). In addition to experimental proofs of the existence of phonoriton we propose an experiment to measure its flight time. (author). 33 refs

  15. Thermally Evaporated Iron (Oxide) on an Alumina Barrier Layer, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-06

    We report the XPS characterization of a thermally evaporated iron thin film (6 nm) deposited on an Si/SiO_2/Al_2O_3 substrate using Al Ka X-rays. An XPS survey spectrum, narrow Fe 2p scan, narrow O 1s, and valence band scan are shown.

  16. Band width and multiple-angle valence-state mapping of diamond

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

    1997-04-01

    The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid`s many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of {+-}1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84{degrees} cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space.

  17. Band width and multiple-angle valence-state mapping of diamond

    International Nuclear Information System (INIS)

    Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J.

    1997-01-01

    The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid's many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of ±1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84 degrees cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space

  18. Optical gain and gain suppression of quantum-well lasers with valence band mixing

    International Nuclear Information System (INIS)

    Ahn, D.; Chuang, S.L.

    1990-01-01

    The effects of valence band mixing on the nonlinear gains of quantum-well lasers are studied theoretically. The authors' analysis is based on the multiband effective-mass theory and the density matrix formalism with intraband relaxation taken into account. The gain and the gain-suppression coefficient of a quantum-well laser are calculated from the complex optical susceptibility obtained by the density matrix formulation with the theoretical dipole moments obtained from the multiband effective-mass theory. The calculated gain spectrum shows that there are remarkable differences (both in peak amplitude and spectral shape) between our model with valence band mixing and the conventional parabolic band model. The shape of the gain spectrum calculated by the authors' model becomes more symmetric due to intraband relaxation together with nonparabolic energy dispersions and is closer to the experimental observations when compared with the conventional method using the parabolic band model and the multiband effective-mass calculation without intraband relaxation. Both give quite asymmetric gain spectra. Optical intensity in the GaAs active region is estimated by solving rate equations for the stationary states with nonlinear gain suppression. The authors calculate the mode gain for the resonant mode including the gain suppression, which results in spectral hole burning of the gain spectrum

  19. Convergence of valence bands for high thermoelectric performance for p-type InN

    International Nuclear Information System (INIS)

    Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

    2015-01-01

    Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

  20. Angular dependent XPS study of surface band bending on Ga-polar n-GaN

    Science.gov (United States)

    Huang, Rong; Liu, Tong; Zhao, Yanfei; Zhu, Yafeng; Huang, Zengli; Li, Fangsen; Liu, Jianping; Zhang, Liqun; Zhang, Shuming; Dingsun, An; Yang, Hui

    2018-05-01

    Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending.

  1. Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy

    Directory of Open Access Journals (Sweden)

    Li Zhiwei

    2011-01-01

    Full Text Available Abstract The valence band offset (VBO of wurtzite indium nitride/strontium titanate (InN/SrTiO3 heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be 1.26 ± 0.23 eV and the conduction band offset is deduced to be 1.30 ± 0.23 eV, indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3.

  2. Determination of a natural valence-band offset - The case of HgTe and CdTe

    Science.gov (United States)

    Shih, C. K.; Spicer, W. E.

    1987-01-01

    A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

  3. Deduction of the chemical state and the electronic structure of Nd{sub 2}Fe{sub 14}B compound from X-ray photoelectron spectroscopy core-level and valence-band spectra

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jing; Liang, Le [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Zhang, Lanting, E-mail: lantingzh@sjtu.edu.cn, E-mail: lmsun@sjtu.edu.cn [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Hirano Institute for Materials Innovation, Shanghai Jiao Tong University, Shanghai 200240 (China); Sun, Limin, E-mail: lantingzh@sjtu.edu.cn, E-mail: lmsun@sjtu.edu.cn [Instrumental Analysis Center, Shanghai Jiao Tong University, Shanghai 200240 (China); Hirano, Shinichi [Hirano Institute for Materials Innovation, Shanghai Jiao Tong University, Shanghai 200240 (China)

    2014-10-28

    Characterization of chemical state and electronic structure of the technologically important Nd{sub 2}Fe{sub 14}B compound is attractive for understanding the physical nature of its excellent magnetic properties. X-ray photoelectron spectroscopy (XPS) study of such rare-earth compound is important and also challenging due to the easy oxidation of surface and small photoelectron cross-sections of rare-earth 4f electrons and B 2p electrons, etc. Here, we reported an investigation based on XPS spectra of Nd{sub 2}Fe{sub 14}B compound as a function of Ar ion sputtering time. The chemical state of Fe and that of B in Nd{sub 2}Fe{sub 14}B compound can be clearly determined to be 0 and −3, respectively. The Nd in Nd{sub 2}Fe{sub 14}B compound is found to have the chemical state of close to +3 instead of +3 as compared with the Nd in Nd{sub 2}O{sub 3}. In addition, by comparing the valence-band spectrum of Nd{sub 2}Fe{sub 14}B compound to that of the pure Fe, the contributions from Nd, Fe, and B to the valence-band structure of Nd{sub 2}Fe{sub 14}B compound is made more clear. The B 2p states and B 2s states are identified to be at ∼11.2 eV and ∼24.6 eV, respectively, which is reported for the first time. The contribution from Nd 4f states can be identified both in XPS core-level spectrum and XPS valence-band spectrum. Although Nd 4f states partially hybridize with Fe 3d states, Nd 4f states are mainly localized in Nd{sub 2}Fe{sub 14}B compound.

  4. Valence band structures of InAs/GaAs quantum rings using the Fourier transform method

    International Nuclear Information System (INIS)

    Jia Boyong; Yu Zhongyuan; Liu Yumin

    2009-01-01

    The valence band structures of strained InAs/GaAs quantum rings are calculated, with the four-band k · p model, in the framework of effective-mass envelope function theory. When determining the Hamiltonian matrix elements, we develop the Fourier transform method instead of the widely used analytical integral method. Using Fourier transform, we have investigated the energy levels as functions of the geometrical parameters of the rings and compared our results with those obtained by the analytical integral method. The results show that the energy levels in the quantum rings change dramatically with the inner radius, outer radius, average radius, width, height of the ring and the distance between two adjacent rings. Our method can be adopted in low-dimensional structures with arbitrary shape. Our results are consistent with those in the literature and should be helpful for studying and fabricating optoelectronic devices

  5. Experimental determination of conduction and valence bands of semiconductor nanoparticles using Kelvin probe force microscopy

    International Nuclear Information System (INIS)

    Zhang Wen; Chen Yongsheng

    2013-01-01

    The ability to determine a semiconductor’s band edge positions is important for the design of new photocatalyst materials. In this paper, we introduced an experimental method based on Kelvin probe force microscopy to determine the conduction and valence band edge energies of semiconductor nanomaterials, which has rarely been demonstrated. We tested the method on six semiconductor nanoparticles (α-Fe 2 O 3 , CeO 2 , Al 2 O 3 , CuO, TiO 2 , and ZnO) with known electronic structures. The experimentally determined band edge positions for α-Fe 2 O 3 , Al 2 O 3 , and CuO well matched the literature values with no statistical difference. Except CeO 2 , all other metal oxides had a consistent upward bias in the experimental measurements of band edge positions because of the shielding effect of the adsorbed surface water layer. This experimental approach may outstand as a unique alternative way of probing the band edge energy positions of semiconductor materials to complement the current computational methods, which often find limitations in new synthetic or complex materials. Ultimately, this work provides scientific foundation for developing experimental tools to probe nanoscale electronic properties of photocatalytic materials, which will drive breakthroughs in the design of novel photocatalytic systems and advance the fundamental understanding of material properties.

  6. Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

    Science.gov (United States)

    Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

    2010-09-01

    We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

  7. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    Science.gov (United States)

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-10-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  8. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding

    2017-10-16

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  9. Spin-dependent electron-phonon coupling in the valence band of single-layer WS2

    DEFF Research Database (Denmark)

    Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

    2017-01-01

    The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

  10. Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation.

    Science.gov (United States)

    Chirayath, V A; Callewaert, V; Fairchild, A J; Chrysler, M D; Gladen, R W; Mcdonald, A D; Imam, S K; Shastry, K; Koymen, A R; Saniz, R; Barbiellini, B; Rajeshwar, K; Partoens, B; Weiss, A H

    2017-07-13

    Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.

  11. Resonant photoemission at core-level shake-up thresholds: Valence-band satellites in nickel

    International Nuclear Information System (INIS)

    Bjoerneholm, O.; Andersen, J.N.; Wigren, C.; Nilsson, A.; Nyholm, R.; Ma; Ortensson, N.

    1990-01-01

    Three-hole satellites (3d 7 final-state configuration) in the nickel valence-band photoelectron spectrum have been identified at 13 and 18 eV binding energy with use of synchrotron radiation from the MAX storage ring. The three-hole satellites show resonances at photon energies close to the threshold for excitation of 3p 5 3d 9 core-hole shake-up states. The 13-eV satellite also shows a resonance directly at the 3p threshold. This is interpreted as an interference between the direct three-hole ionization and a shake-up transition in the Auger decay of the 3p hole. This shake-up process is also identified directly in the M 2,3 M 4,5 M 4,5 Auger spectrum

  12. A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

    International Nuclear Information System (INIS)

    Pietrzyk, M.A.; Kowalski, B.J.; Orlowski, B.A.; Knoff, W.; Story, T.; Dobrowolski, W.; Slynko, V.E.; Slynko, E.I.; Johnson, R.L.

    2010-01-01

    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV. (authors)

  13. Simultaneous Conduction and Valence Band Quantization in Ultrashallow High-Density Doping Profiles in Semiconductors

    Science.gov (United States)

    Mazzola, F.; Wells, J. W.; Pakpour-Tabrizi, A. C.; Jackman, R. B.; Thiagarajan, B.; Hofmann, Ph.; Miwa, J. A.

    2018-01-01

    We demonstrate simultaneous quantization of conduction band (CB) and valence band (VB) states in silicon using ultrashallow, high-density, phosphorus doping profiles (so-called Si:P δ layers). We show that, in addition to the well-known quantization of CB states within the dopant plane, the confinement of VB-derived states between the subsurface P dopant layer and the Si surface gives rise to a simultaneous quantization of VB states in this narrow region. We also show that the VB quantization can be explained using a simple particle-in-a-box model, and that the number and energy separation of the quantized VB states depend on the depth of the P dopant layer beneath the Si surface. Since the quantized CB states do not show a strong dependence on the dopant depth (but rather on the dopant density), it is straightforward to exhibit control over the properties of the quantized CB and VB states independently of each other by choosing the dopant density and depth accordingly, thus offering new possibilities for engineering quantum matter.

  14. Decay of Wannier-Mott excitons interacting with acoustic phonon in semiconductors with a degenerate valence band

    International Nuclear Information System (INIS)

    Nguyen Toan Thang; Nguyen Ai Viet; Nguyen Hong Quang

    1987-06-01

    Decay probabilities of light and heavy excitons interacting with acoustic phonons in cubic semiconductors with a degenerate valence band are calculated. The numerical results for GaAs showed that the decay probability of the light exciton is much greater than that of the heavy one. (author). 10 refs, 1 fig

  15. A Combined Theoretical and Experimental View on Valence and Conduction Band Densities of States of Lead Halide Perovskites

    Science.gov (United States)

    Kronik, Leeor; Endres, James; Egger, David A.; Kulbak, Michael; Kerner, Ross A.; Zhao, Lianfeng; Silver, Scott H.; Hodes, Gary; Rand, Barry P.; Cahen, David; Kahn, Antoine

    We present results for the valence and conduction band density of states (DOS), measured via ultraviolet and inverse photoemission spectroscopies for three lead halide perovskites. Specifically, the DOS of MAPbI3, MAPbBr3, and CsPbBr3, grown on different substrates, are compared. Theoretical DOS, calculated via hybrid density functional theory and including spin-orbit coupling, are compared to experimental data. The agreement between experiment and theory, obtained after correcting the latter for quantitative discrepancies, leads to the identification of valence and conduction band spectral features. In particular, this comparison allows for precise determination of the energy position of the band edges, namely ionization energies and electron affinities of these materials. We find an unusually low DOS at the valence band maximum (VBM) of these systems, which confirms and generalizes previous findings of strong band dispersion and low DOS at the VBM of MAPbI3. This calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.

  16. Valence one-electron and shake-up ionization bands of fluorene, carbazole and dibenzofuran

    International Nuclear Information System (INIS)

    Reza Shojaei, S.H.; Morini, Filippo; Deleuze, Michael S.

    2013-01-01

    Highlights: • The photoelectron spectra of the title compounds are assigned in details. • Shake-up lines are found to severely contaminate both π- and σ-ionization bands. • σ-ionization onsets are subject to severe vibronic coupling complications. • We compare the results of OVGF, ADC(3) and TDDFT calculations. - Abstract: A comprehensive study of the He (I) ultra-violet photoelectron spectra of fluorene, carbazole and dibenzofuran is presented with the aid of one-particle Green’s Function calculations employing the outer-valence Green’s Function (OVGF) approach and the third-order algebraic diagrammatic construction [ADC(3)] scheme, along with Dunning’s correlation consistent basis sets of double and triple zeta quality (cc-pVDZ, cc-pVTZ). Extrapolations of the ADC(3) results for the outermost one-electron π-ionization energies to the cc-pVTZ basis set enable theoretical insights into He (I) measurements within ∼0.15 eV accuracy, up to the σ-ionization onset. The lower ionization energy of carbazole is the combined result of mesomeric and electronic relaxation effects. OVGF/cc-pVDZ or OVGF/cc-pVTZ pole strengths smaller than 0.85 systematically corroborate a breakdown of the orbital picture of ionization at the ADC(3) level. Comparison is made with calculations of the lowest doublet–doublet excitation energies of the radical cation of fluorene, by means of time-dependent density functional theory (TDDFT)

  17. Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles

    Energy Technology Data Exchange (ETDEWEB)

    Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Yanagisawa, Susumu; Kadekawa, Yukihiro [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

    2014-02-14

    By means of the first-principles density-functional theory, we investigate the effect of relative atom displacement in the crystal unit cell, namely, internal strain on the valence-band dispersion of strained silicon, and find close correlation of this effect with variation in the specific bond angles due to internal strain. We consider the [111] ([110]) band dispersion for (111) ((110)) biaxial tensility and [111] ([110]) uniaxial compression, because remarkably small values of hole effective mass m* can be obtained in this dispersion. Under the practical condition of no normal stress, biaxial tensility (uniaxial compression) involves additional normal compression (tensility) and internal strain. With an increase in the internal-strain parameter, the energy separation between the highest and second-highest valence bands becomes strikingly larger, and the highest band with conspicuously small m* extends remarkably down to a lower energy region, until it intersects or becomes admixed with the second band. This is closely correlated with the change in the specific bond angles, and this change can reasonably explain the above enlargement of the band separation.

  18. Energy shift and conduction-to-valence band transition mediated by a time-dependent potential barrier in graphene

    Science.gov (United States)

    Chaves, Andrey; da Costa, D. R.; de Sousa, G. O.; Pereira, J. M.; Farias, G. A.

    2015-09-01

    We investigate the scattering of a wave packet describing low-energy electrons in graphene by a time-dependent finite-step potential barrier. Our results demonstrate that, after Klein tunneling through the barrier, the electron acquires an extra energy which depends on the rate of change of the barrier height with time. If this rate is negative, the electron loses energy and ends up as a valence band state after leaving the barrier, which effectively behaves as a positively charged quasiparticle.

  19. XPS study on the electronic structure of hydrided Ti-V, Ti-Nb and Ti-Mo alloys

    International Nuclear Information System (INIS)

    Tanaka, Kazuhide; Aoki, Hiromasa

    1989-01-01

    Effects of hydrogenation on the core and valence electronic structures of β(bcc)-stabilized Ti-25at%V, Ti-50at%Nb and Ti-20at%Mo alloys are studied with XPS technique using monochromatized Al K α radiation. Small but uniform binding-energy shifts are observed upon hydrogenation for all the core spectra measured. Their valence-band spectra are significantly distorted, providing an evidence of the formation of metal-hydrogen bonding bands in these Ti alloys. Interrelations between the core binding-energy shifts and the valence-band distortion are discussed. (orig.)

  20. Thermally Annealed Iron (Oxide) Thin Film on an Alumina Barrier Layer, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-06

    Herein we show characterization of an Fe thin film on Al_2O_3 after thermal annealing under H_2 using Al Ka X-rays. The XPS survey spectrum, narrow Fe 2p scan, and valence band regions are presented. The survey spectrum shows aluminum signals due to exposure of the underlying Al_2O_3 film during Fe nanoparticle formation.

  1. Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

    Science.gov (United States)

    Samajdar, D. P.; Dhar, S.

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1−xBix and InSb1−xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E − energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. PMID:24592181

  2. Valence band structure of InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy semiconductors calculated using valence band anticrossing model.

    Science.gov (United States)

    Samajdar, D P; Dhar, S

    2014-01-01

    The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs(1-x)Bi(x) and InSb(1-x)Bi(x) alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E - energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data.

  3. The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1-x alloy

    Science.gov (United States)

    Zhao, Chuan-Zhen; Zhu, Min-Min; Wang, Jun; Wang, Sha-Sha; Lu, Ke-Qing

    2018-05-01

    The research on the temperature dependence of the band gap energy of the dilute bismuth GaBixAs1-x alloy has been done. It is found that its temperature insensitiveness is due to the enhanced localized character of the valence band state and the small decrease of the temperature coefficient for the conduction band minimum (CBM). The enhanced localized character of the valence band state is the main factor. In order to describe the localized effect of the Bi levels on the valence band, the localized energy is introduced into the Varshni's equation. It is found that the effect of the localized Bi level on the valence band becomes strong with increasing Bi content. In addition, it is found that the pressure dependence of the band gap energy of GaBixAs1-x does not seem to be influenced by the localized Bi levels. It is due to two factors. One is that the pressure dependence of the band gap energy is mainly determined by the D CBM of GaBixAs1-x. The D CBM of GaBixAs1-x is not influenced by the localized Bi levels. The other is that the small variation of the pressure coefficient for the D valence band maximum (VBM) state of GaBixAs1-x can be cancelled by the variation of the pressure coefficient for the D CBM state of GaBixAs1-x.

  4. Characterization of the Valence and Conduction Band Levels of n = 1 2D Perovskites: A Combined Experimental and Theoretical Investigation

    KAUST Repository

    Silver, Scott

    2018-02-13

    This study presents a combined experimental and theoretical study of the electronic structure of two 2D metal halide perovskite films. Ultraviolet and inverse photoemission spectroscopies are performed on solution-processed thin films of the n = 1 layered perovskite butylammonium lead iodide and bromide, BA2PbI4 and BA2PbBr4, characterized by optical absorption and X-ray diffraction, to determine their valence and conduction band densities of states, transport gaps, and exciton binding energies. The electron spectroscopy results are compared with the densities of states determined by density functional theory calculations. The remarkable agreement between experiment and calculation enables a detailed identification and analysis of the organic and inorganic contributions to the valence and conduction bands of these two hybrid perovskites. The electron affinity and ionization energies are found to be 3.1 and 5.8 eV for BA2PbI4, and 3.1 and 6.5 eV for BA2PbBr4. The exciton binding energies are estimated to be 260 and 300 meV for the two materials, respectively. The 2D lead iodide and bromide perovskites exhibit significantly less band dispersion and a larger density of states at the band edges than the 3D analogs. The effects of using various organic ligands are also discussed.

  5. Interplay of Coulomb interactions and disorder in three-dimensional quadratic band crossings without time-reversal symmetry and with unequal masses for conduction and valence bands

    Science.gov (United States)

    Mandal, Ipsita; Nandkishore, Rahul M.

    2018-03-01

    Coulomb interactions famously drive three-dimensional quadratic band crossing semimetals into a non-Fermi liquid phase of matter. In a previous work [Nandkishore and Parameswaran, Phys. Rev. B 95, 205106 (2017), 10.1103/PhysRevB.95.205106], the effect of disorder on this non-Fermi liquid phase was investigated, assuming that the band structure was isotropic, assuming that the conduction and valence bands had the same band mass, and assuming that the disorder preserved exact time-reversal symmetry and statistical isotropy. It was shown that the non-Fermi liquid fixed point is unstable to disorder and that a runaway flow to strong disorder occurs. In this paper, we extend that analysis by relaxing the assumption of time-reversal symmetry and allowing the electron and hole masses to differ (but continuing to assume isotropy of the low energy band structure). We first incorporate time-reversal symmetry breaking disorder and demonstrate that there do not appear any new fixed points. Moreover, while the system continues to flow to strong disorder, time-reversal-symmetry-breaking disorder grows asymptotically more slowly than time-reversal-symmetry-preserving disorder, which we therefore expect should dominate the strong-coupling phase. We then allow for unequal electron and hole masses. We show that whereas asymmetry in the two masses is irrelevant in the clean system, it is relevant in the presence of disorder, such that the `effective masses' of the conduction and valence bands should become sharply distinct in the low-energy limit. We calculate the RG flow equations for the disordered interacting system with unequal band masses and demonstrate that the problem exhibits a runaway flow to strong disorder. Along the runaway flow, time-reversal-symmetry-preserving disorder grows asymptotically more rapidly than both time-reversal-symmetry-breaking disorder and the Coulomb interaction.

  6. Ab-initio calculation of the valence-band offset at strained GaAs/InAs (001) heterojunction

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1993-06-01

    We present a self consistent pseudopotential calculation of the valence band offset (VBO) at GaAs/InAs (001) strained heterojunction, which is chose as an example of the isovalent polar with common-anion lattice mismatched heterojunctions. The effects of strain are studied by looking at the variation of the VBO versus the in plane lattice constant, which is imposed by the substrate. Our results show that the VBO can be tuned by about 0.17 eV going from GaAs to InAs substrates. Comparison of our work with the available experimental and theoretical results is also discussed. (author). 25 refs, 3 figs, 5 tabs

  7. Effects of surface condition on the work function and valence-band position of ZnSnN2

    Science.gov (United States)

    Shing, Amanda M.; Tolstova, Yulia; Lewis, Nathan S.; Atwater, Harry A.

    2017-12-01

    ZnSnN2 is an emerging wide band gap earth-abundant semiconductor with potential applications in photonic devices such as solar cells, LEDs, and optical sensors. We report the characterization by ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy of reactively radio-frequency sputtered II-IV-nitride ZnSnN2 thin films. For samples transferred in high vacuum, the ZnSnN2 surface work function was 4.0 ± 0.1 eV below the vacuum level, with a valence-band onset of 1.2 ± 0.1 eV below the Fermi level. The resulting band diagram indicates that the degenerate bulk Fermi level position in ZnSnN2 shifts to mid-gap at the surface due to band bending that results from equilibration with delocalized surface states within the gap. Brief (< 10 s) exposures to air, a nitrogen-plasma treatment, or argon-ion sputtering caused significant chemical changes at the surface, both in surface composition and interfacial energetics. The relative band positioning of the n-type semiconductor against standard redox potentials indicated that ZnSnN2 has an appropriate energy band alignment for use as a photoanode to effect the oxygen-evolution reaction.

  8. Al2O3 e-Beam Evaporated onto Silicon (100)/SiO2, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Madaan, Nitesh; Kanyal, Supriya S.; Jensen, David S.; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Samha, Hussein; Linford, Matthew R.

    2013-09-25

    We report the XPS characterization of a thin film of Al2O3 (35 nm) deposited via e-beam evaporation onto silicon (100). The film was characterized with monochromatic Al Ka radiation. An XPS survey scan, an Al 2p narrow scan, and the valence band spectrum were collected. The Al2O3 thin film is used as a diffusion barrier layer for templated carbon nanotube (CNT) growth in the preparation of microfabricated thin layer chromatography plates.

  9. Electronic properties and bonding in Zr Hx thin films investigated by valence-band x-ray photoelectron spectroscopy

    Science.gov (United States)

    Magnuson, Martin; Schmidt, Susann; Hultman, Lars; Högberg, Hans

    2017-11-01

    The electronic structure and chemical bonding in reactively magnetron sputtered Zr Hx (x =0.15 , 0.30, 1.16) thin films with oxygen content as low as 0.2 at.% are investigated by 4d valence band, shallow 4p core-level, and 3d core-level x-ray photoelectron spectroscopy. With increasing hydrogen content, we observe significant reduction of the 4d valence states close to the Fermi level as a result of redistribution of intensity toward the H 1s-Zr 4d hybridization region at ˜6 eV below the Fermi level. For low hydrogen content (x =0.15 , 0.30), the films consist of a superposition of hexagonal closest-packed metal (α phase) and understoichiometric δ -Zr Hx (Ca F2 -type structure) phases, while for x =1.16 , the films form single-phase Zr Hx that largely resembles that of stoichiometric δ -Zr H2 phase. We show that the cubic δ -Zr Hx phase is metastable as thin film up to x =1.16 , while for higher H contents the structure is predicted to be tetragonally distorted. For the investigated Zr H1.16 film, we find chemical shifts of 0.68 and 0.51 eV toward higher binding energies for the Zr 4 p3 /2 and 3 d5 /2 peak positions, respectively. Compared to the Zr metal binding energies of 27.26 and 178.87 eV, this signifies a charge transfer from Zr to H atoms. The change in the electronic structure, spectral line shapes, and chemical shifts as a function of hydrogen content is discussed in relation to the charge transfer from Zr to H that affects the conductivity by charge redistribution in the valence band.

  10. XPS study of U, UNi5, UCu5 and UNisub(0.5)Cusub(4.5)

    International Nuclear Information System (INIS)

    Grohs, H.; Hoechst, H.; Steiner, P.; Huefner, S.; Buschow, K.H.J.

    1980-01-01

    Core and valence band spectra of U metal and the intermetallic compounds UNi 5 , UCu 5 and UNisub(0.5)Cusub(4.5) have been measured by X-ray excited photoelectron spectroscopy (XPS). The data indicate that in UNi 5 the configuration is 5f 3 , and in UCu 5 and UNisub(0.5)Cusub(4.5) a mixed valence configuration with fewer 5f electrons than in UNi 5 is present. (author)

  11. Pressure variation of the valence band width in Ge: A self-consistent GW study

    DEFF Research Database (Denmark)

    Modak, Paritosh; Svane, Axel; Christensen, Niels Egede

    2009-01-01

    . In the present work we report results of quasiparticle self-consistent GW  (QSGW) band calculations for diamond- as well as β-tin-type Ge under pressure. For both phases we find that the band width increases with pressure. For β-tin Ge this agrees with experiment and density-functional theory, but for diamond Ge...

  12. Quasiparticle excitations in valence-fluctuation materials: effects of band structure and crystal fields

    International Nuclear Information System (INIS)

    Brandow, B.H.

    1985-01-01

    Evidence is now quite strong that the elementary hybridization model is the correct way to understand the lattice-coherent Fermi liquid regime at very low temperatures. Many-body theory leads to significant renormalizations of the input parameters, and many of the band-theoretic channels for hybridization are suppressed by the combined effects of Hund's-rule coupling, crystal-field splitting, and the f-f Coulomb repulsion U. Some exploratory calculations based on this picture are described, and some inferences are drawn about the band structures of several heavy-fermion materials. These inferences can and should be tested by suitably modified band-theoretic calculations. We find evidence for a significant Baber-scattering contribution in the very-low-temperature resistivity. A new mechanism is proposed for crossover from the coherent Fermi-liquid regime to the incoherent dense-Kondo regime. 28 refs

  13. Valence band offset of β-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy.

    Science.gov (United States)

    Wei, Wei; Qin, Zhixin; Fan, Shunfei; Li, Zhiwei; Shi, Kai; Zhu, Qinsheng; Zhang, Guoyi

    2012-10-10

    A sample of the β-Ga2O3/wurtzite GaN heterostructure has been grown by dry thermal oxidation of GaN on a sapphire substrate. X-ray diffraction measurements show that the β-Ga2O3 layer was formed epitaxially on GaN. The valence band offset of the β-Ga2O3/wurtzite GaN heterostructure is measured by X-ray photoelectron spectroscopy. It is demonstrated that the valence band of the β-Ga2O3/GaN structure is 1.40 ± 0.08 eV.

  14. 16O + 16O + valence neutrons in molecular orbitals structures of positive- and negative-parity superdeformed bands in 34S

    International Nuclear Information System (INIS)

    Taniguchi, Yasutaka

    2015-01-01

    The structures of superdeformed (SD) states in 34 S have been investigated using the antisymmetrized molecular dynamics and generator coordinate method (GCM). The GCM basis wave functions are calculated via energy variation with a constraint on the quadrupole deformation parameter β. By applying the GCM after parity and angular momentum projections, the coexistence of two positive- and one negative-parity SD bands are predicted, and low-lying states and other deformed bands are obtained. The SD bands have structures of 16 O + 16 O + two valence neutrons in molecular orbitals around the two 16 O cores in a cluster picture. The configurations of the two valence neutrons are δ 2 and π 2 for the positive-parity SD bands and π 1 δ 1 for the negative-parity SD band. (author)

  15. 16O + 16O + valence neutrons in molecular orbitals structures of positive- and negative-parity superdeformed bands in 34S

    International Nuclear Information System (INIS)

    Taniguchi, Yasutaka

    2014-01-01

    The structures of superdeformed (SD) states in 34 S are investigated using the antisymmetrized molecular dynamics and generator coordinate method (GCM). The GCM basis wave functions are calculated via energy variation with a constraint on the quadrupole deformation parameter β. By applying the GCM after parity and angular momentum projections, the coexistence of two positive- and one negative-parity SD bands are predicted, and low-lying states and other deformed bands are obtained. The SD bands have structures of 16 O + 16 O + two valence neutrons in molecular orbitals around the two 16 O cores in a cluster picture. The configurations of the two valence neutrons are δ 2 and π 2 for the positive-parity SD bands and π 1 δ 1 for the negative-parity SD band

  16. Valence band photoemission from in-situ grown GaAs(100)-c(4 x 4)

    Czech Academy of Sciences Publication Activity Database

    Jiříček, Petr; Cukr, Miroslav; Bartoš, Igor; Adell, M.; Strasser, T.; Schattke, W.

    2006-01-01

    Roč. 56, č. 1 (2006), s. 21-26 ISSN 0011-4626. [Symposium on Surface Physics /10./. Praha, 11.07.2005-15.07.2005] R&D Projects: GA ČR(CZ) GA202/04/0994 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaAs(100)-c(4X4) * surface states * band structure * structure plot Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.568, year: 2006

  17. Structural and XPS studies of PSi/TiO2 nanocomposites prepared by ALD and Ag-assisted chemical etching

    International Nuclear Information System (INIS)

    Iatsunskyi, Igor; Kempiński, Mateusz; Nowaczyk, Grzegorz; Jancelewicz, Mariusz; Pavlenko, Mykola; Załęski, Karol; Jurga, Stefan

    2015-01-01

    Highlights: • Porous silicon/TiO 2 nanocomposites have been investigated. • Morphology and chemical composition of PSi/TiO 2 nanocomposites were established. • Valence-band XPS maximums for PSi/TiO 2 nanocomposites were found and analyzed. - Abstract: PSi/TiO 2 nanocomposites fabricated by atomic layer deposition (ALD) and metal-assisted chemical etching (MACE) were investigated. The morphology and phase structure of PSi/TiO 2 nanocomposites were studied by means of scanning electron microscopy (SEM), transmission electron microscopy (TEM) with an energy dispersive X-ray spectroscopy (EDX) and Raman spectroscopy. The mean size of TiO 2 nanocrystals was determined by TEM and Raman spectroscopy. X-ray photoelectron spectroscopy (XPS) was used to analyze the chemical elemental composition by observing the behavior of the Ti 2p, O 1s and Si 2p lines. TEM, Raman spectroscopy and XPS binding energy analysis confirmed the formation of TiO 2 anatase phase inside the PSi matrix. The XPS valence band analysis was performed in order to investigate the modification of PSi/TiO 2 nanocomposites electronic structure. Surface defects states of Ti 3+ at PSi/TiO 2 nanocomposites were identified by analyzing of XPS valence band spectra

  18. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

    International Nuclear Information System (INIS)

    Vexler, M. I.; Grekhov, I. V.

    2016-01-01

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  19. Valence band electronic structure and band alignment of LaAlO{sub 3}/SrTiO{sub 3}(111) heterointerfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gabel, J.; Scheiderer, P.; Zapf, M.; Schuetz, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, C.; Lee, T.L. [Diamond Light Source, Didcot (United Kingdom)

    2015-07-01

    As in the famous LaAlO{sub 3}(LAO)/SrTiO{sub 3}(STO) (001) a two-dimensional electron system (2DES) also forms at the interface between LAO and STO in (111) orientation. A distinct feature of the (111) interface is its peculiar real space topology. Each bilayer represents a buckled honeycomb lattice similar to graphene which is known theoretically to host various topologically non-trivial states. Bilayer STO in proximity to the interface can be regarded as a three-orbital generalization of graphene with enhanced electron correlations making it a promising candidate for the realization of strongly correlated topological phases. We have investigated the electronic structure of the LAO/STO (111) heterostructure in relation to the oxygen vacancy concentration which we can control by synchrotron light irradiation and oxygen dosing. With hard X-ray photoemission we study the core levels, whereas resonant soft X-ray photoemission is used to probe the interfacial valence band (VB) states. Two VB features are found: a peak at the Fermi level associated with the 2DES and in-gap states at higher binding energies attributed to oxygen vacancies. By varying the oxygen vacancy contribution we can tune the emergence of the VB states and engineer the interfacial band alignment.

  20. Ab-initio valence band spectra of Al, In doped ZnO

    International Nuclear Information System (INIS)

    Palacios, P.; Sanchez, K.; Wahnon, P.

    2009-01-01

    We present the structural and electronic characterization of n-doped (Aluminium or Indium) ZnO and the effect of the doping on the calculated photoelectron spectroscopy (PES) spectra. The fully-relaxed calculations have been made using the density functional theory, including a Hubbard correlation term that increases the Zn-3d states binding energy, and which matches the experimental values. The effect of Oxygen vacancies is also included in our study. Our results show that the new Al or In-donor levels appearing in the conduction band hybridize with the Oxygen-2p states and help decrease the resistivity of these doped systems as was found experimentally. The calculated PES spectra show a small enhancement in the intensity close to the chemical potential as a result of these new Al or In levels

  1. Magnetic dichroism in UV photoemission at off-normal emission: Study of the valence bands

    International Nuclear Information System (INIS)

    Venus, D.; Kuch, W.; Lin, M.; Schneider, C.M.; Ebert, H.; Kirschner, J.

    1997-01-01

    Magnetic dichroism of angle-resolved UV photoemission from fcc Co/Cu(001) thin films has been measured using linearly p-polarized light, and a coplanar geometry where the light and photoelectron wave vectors are antiparallel, and both are perpendicular to the in-plane sample magnetization. This geometry emphasizes information about state dispersion due to the crystalline symmetry. An orderly dispersion of the features in the magnetic dichroism over a wide range of off-normal angles of electron emission is related in detail to the bulk band structure of fcc Co. The measurements confirm the practical utility of magnetic dichroism experiments as a relatively simple complement to spin-resolved photoemission. copyright 1997 The American Physical Society

  2. Multiband model of the valence-band electronic structure in cylindrical GaAs nanowires

    Directory of Open Access Journals (Sweden)

    Čukarić Nemanja A.

    2010-01-01

    Full Text Available We compute the hole states in the GaAs free-standing nanowires, and in the GaAs/(Al,GaAs core-shell nanowires of type I-s, which are grown along the [100] direction. The hole states are extracted from the 4-band Luttinger-Kohn Hamiltonian, which explicitly takes into account mixing between the light and heavy holes. The axial aproximation is adopted, which allowed classification of states according to the total angular monentum (fz when expressed in units of the Planck constant. The envelope functions are expanded in Bessel functions of the first kind. The dispersion relations of the subbands E(kz obtained by the devised method do not resemble parabolas, which is otherwise a feature of the dispersion relations of the conduction subbands. Furthermore, the energy levels of holes whose total orbital momentum is fz=1/2 are shown to cross for a free-standing wire. The low energy fz=1/2 states are found to anticross, but these anticrossings turn into crossings when the ratio of the inner and outer radius of the core-shell wire takes a certain value. The influence of the geometric parameters on the dispersion relations is considered for both free standing and core-shell nanowires.

  3. Polarization Dependent Bulk-sensitive Valence Band Photoemission Spectroscopy and Density Functional Theory Calculations: Part I. 3d Transition Metals

    Science.gov (United States)

    Ueda, Shigenori; Hamada, Ikutaro

    2017-12-01

    The X-ray polarization dependent valence band HAXPES spectra of 3d transition metals (TMs) of Ti-Zn were measured to investigate the orbital resolved electronic structures by utilizing that the fact the photoionization cross-section of the atomic orbitals strongly depends on the experimental geometry. We have calculated the HAXPES spectra, which correspond to the cross-section weighted densities of states (CSW-DOSs), where the DOSs were obtained by the density functional theory calculations, and we have determined the relative photoionization cross-sections of the 4s and 4p orbitals to the 3d orbital in the 3d TMs. The experimentally obtained bulk-sensitive 3d and 4s DOSs were good agreement with the calculated DOSs in Ti, V, Cr, and Cu. In contrast, the deviations between the experimental and calculated 3d DOSs for Mn, Fe, Co, Ni were found, suggesting that the electron correlation plays an important role in the electronic structures for these materials.

  4. First determination of the valence band dispersion of CH3NH3PbI3 hybrid organic-inorganic perovskite

    Science.gov (United States)

    Lee, Min-I.; Barragán, Ana; Nair, Maya N.; Jacques, Vincent L. R.; Le Bolloc'h, David; Fertey, Pierre; Jemli, Khaoula; Lédée, Ferdinand; Trippé-Allard, Gaëlle; Deleporte, Emmanuelle; Taleb-Ibrahimi, Amina; Tejeda, Antonio

    2017-07-01

    The family of hybrid organic-inorganic halide perovskites is in the limelight because of their recently discovered high photovoltaic efficiency. These materials combine photovoltaic energy conversion efficiencies exceeding 22% and low-temperature and low-cost processing in solution; a breakthrough in the panorama of renewable energy. Solar cell operation relies on the excitation of the valence band electrons to the conduction band by solar photons. One factor strongly impacting the absorption efficiency is the band dispersion. The band dispersion has been extensively studied theoretically, but no experimental information was available. Herein, we present the first experimental determination of the valence band dispersion of methylammonium lead halide in the tetragonal phase. Our results pave the way for contrasting the electronic hopping or the electron effective masses in different theories by comparing to our experimental bands. We also show a significant broadening of the electronic states, promoting relaxed conditions for photon absorption, and demonstrate that the tetragonal structure associated to the octahedra network distortion below 50 °C induces only a minor modification of the electronic bands, with respect to the cubic phase at high temperature, thus minimizing the impact of the cubic-tetragonal transition on solar cell efficiencies.

  5. Effect of phase formation on valence band photoemission and photoresonance study of Ti/Ni multilayers using synchrotron radiation

    International Nuclear Information System (INIS)

    Bhatt, Pramod; Chaudhari, S.M.

    2006-01-01

    This paper presents investigation of Ti-Ni alloy phase formation and its effect on valence band (VB) photoemission and photoresonance study of as-deposited as well as annealed Ti/Ni multilayers (MLs) up to 600 deg. C using synchrotron radiation. For this purpose [Ti (50 A)/Ni (50 A)]X 10 ML structures were deposited by using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions. Formation of different phases of Ti-Ni alloy due to annealing treatment has been confirmed by the X-ray diffraction (XRD) technique. The XRD pattern corresponding as-deposited ML sample shows crystalline nature of both Ti and Ni deposited layers, whereas 300 deg. C annealed ML sample show solid-state reaction (SSR) leading to amorphization and subsequent recrystallisation at higher temperatures of annealing (≥400 deg. C) with the formation of TiNi, TiNi 3 and Ti 2 Ni alloy phases. The survey scans corresponding to 400, 500 and 600 deg. C annealed ML sample shows interdiffusion and intermixing of Ni atoms into Ti layers leading to chemical Ti-Ni alloys phase formation at interface. The corresponding recorded VB spectra using synchrotron radiation at 134 eV on as-deposited ML sample with successive sputtering shows alternately photoemission bands due to Ti 3d and Ni 3d, respectively, indicating there is no mixing of the consequent layers and any phase formation at the interface during deposition. However, ML samples annealed at higher temperatures of annealing, particularly at 400, 500 and 600 deg. C show a clear shift in Ni 3d band and its satellite peak position to higher BE side indicates Ti-Ni alloy phase formation. In addition to this, reduction of satellite peak intensity and Ni 3d density of states (DOS) near Fermi level is also observed due to Ti-Ni phase formation with higher annealing temperatures. The variable photon energy VB measurements on as-deposited and ML samples annealed at 400 deg. C confirms existence and BE position of observed Ni 3d satellite

  6. Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k · p theory

    International Nuclear Information System (INIS)

    Kuang Qian-Wei; Liu Hong-Xia; Wang Shu-Long; Qin Shan-Shan; Wang Zhi-Lin

    2011-01-01

    After constructing a stress and strain model, the valence bands of in-plane biaxial tensile strained Si is calculated by k · p method. In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands. The results show that the valance bands are highly distorted, and the anisotropy is more obvious. To obtain the density of states (DOS) effective mass, which is a very important parameter for device modeling, a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation. This model can be directly used in the device model of metal—oxide semiconductor field effect transistor (MOSFET). It also a provides valuable reference for biaxial tensile strained silicon MOSFET design. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2O8 superconductors

    International Nuclear Information System (INIS)

    Shen, Z.; Lindberg, P.A.P.; Wells, B.O.; Mitzi, D.B.; Lindau, I.; Spicer, W.E.; Kapitulnik, A.

    1988-01-01

    High-quality single crystals of Bi 2 CaSr 2 Cu 2 O 8 superconductors have been prepared and cleaved in ultrahigh vacuum. Low-energy electron diffraction measurements show that the surface structure is consistent with the bulk crystal structure. Ultraviolet photoemission and x-ray photoemission experiments were performed on these well-characterized sample surfaces. The valence-band and the core-level spectra obtained from the single-crystal surfaces are in agreement with spectra recorded from polycrystalline samples, justifying earlier results from polycrystalline samples. Cu satellites are observed both in the valence band and Cu 2p core level, signaling the strong correlation among the Cu 3d electrons. The O 1s core-level data exhibit a sharp, single peak at 529-eV binding energy without any clear satellite structures

  8. Band Alignments, Valence Bands, and Core Levels in the Tin Sulfides SnS, SnS2, and Sn2S3: Experiment and Theory

    OpenAIRE

    Whittles, TJ; Burton, LA; Skelton, JM; Walsh, A; Veal, TD; Dhanak, VR

    2016-01-01

    Tin sulfide solar cells show relatively poor efficiencies despite attractive photovoltaic properties, and there is difficulty in identifying separate phases, which are also known to form during Cu2ZnSnS4 depositions. We present X-ray photoemission spectroscopy (XPS) and inverse photoemission spectroscopy measurements of single crystal SnS, SnS2, and Sn2S3, with electronic-structure calculations from density functional theory (DFT). Differences in the XPS spectra of the three phases, including...

  9. APS- and XPS-investigations of vanadium, vanadium carbide and graphite

    Energy Technology Data Exchange (ETDEWEB)

    Bradshaw, A M; Krause, U [Technische Univ. Muenchen (F.R. Germany). Inst. fuer Physikalische Chemie und Theoretische Chemie

    1975-11-01

    Soft X-ray appearance potential spectroscopy (APS) and X-ray photoelectron spectroscopy (XPS) have been used to study vanadium, vanadium carbide, and graphite. The chemical shifts for vanadium carbide with respect to metallic vanadium and graphite are compared for the two methods. The Csub(K) structure in APS and the valence band in XPS for vanadium carbide show good agreement with the band structure calculations of Neckel and co-workers. Using the band structure calculations of Painter et al. it is also shown how the multi-peak structure in the APS spectrum of graphite is possibly due to density of states effects. It would therefore appear that plasmon coupling plays only a minor role.

  10. Large shift and small broadening of Br2 valence band upon dimer formation with H2O: an ab initio study.

    Science.gov (United States)

    Franklin-Mergarejo, Ricardo; Rubayo-Soneira, Jesus; Halberstadt, Nadine; Ayed, Tahra; Bernal-Uruchurtu, Margarita I; Hernández-Lamoneda, Ramón; Janda, Kenneth C

    2011-06-16

    Valence electronic excitation spectra are calculated for the H(2)O···Br(2) complex using highly correlated ab initio potentials for both the ground and the valence electronic excited states and a 2-D approximation for vibrational motion. Due to the strong interaction between the O-Br and the Br-Br stretching motions, inclusion of these vibrations is the minimum necessary for the spectrum calculation. A basis set calculation is performed to determine the vibrational wave functions for the ground electronic state and a wave packet simulation is conducted for the nuclear dynamics on the excited state surfaces. The effects of both the spin-orbit interaction and temperature on the spectra are explored. The interaction of Br(2) with a single water molecule induces nearly as large a shift in the spectrum as is observed for an aqueous solution. In contrast, complex formation has a remarkably small effect on the T = 0 K width of the valence bands due to the fast dissociation of the dihalogen bond upon excitation. We therefore conclude that the widths of the spectra in aqueous solution are mostly due to inhomogeneous broadening. © 2011 American Chemical Society

  11. Size and alloying induced shift in core and valence bands of Pd-Ag and Pd-Cu nanoparticles

    International Nuclear Information System (INIS)

    Sengar, Saurabh K.; Mehta, B. R.; Govind

    2014-01-01

    In this report, X-ray photoelectron spectroscopy studies have been carried out on Pd, Ag, Cu, Pd-Ag, and Pd-Cu nanoparticles having identical sizes corresponding to mobility equivalent diameters of 60, 40, and 20 nm. The nanoparticles were prepared by the gas phase synthesis method. The effect of size on valence and core levels in metal and alloy nanoparticles has been studied by comparing the values to those with the 60 nm nanoparticles. The effect of alloying has been investigated by comparing the valence and core level binding energies of Pd-Cu and Pd-Ag alloy nanoparticles with the corresponding values for Pd, Ag, and Cu nanoparticles of identical sizes. These effects have been explained in terms of size induced lattice contractions, alloying induced charge transfer, and hybridization effects. The observation of alloying and size induced binding energy shifts in bimetallic nanoparticles is important from the point of view of hydrogen reactivity

  12. Measurement of the valence band-offset in a PbSe/ZnO heterojunction by x-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Li Lin; Qiu Jijun; Weng Binbin; Yuan Zijian; Shi Zhisheng [School of Electrical and Computer Engineering, University of Oklahoma, Norman, Oklahoma 73019 (United States); Li Xiaomin; Gan Xiaoyan [State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Sellers, Ian R. [Deparment of Physics, University of Oklahoma, Norman, Oklahoma 73019 (United States)

    2012-12-24

    A heterojunction of PbSe/ZnO has been grown by molecular beam epitaxy. X-ray photoelectron spectroscopy was used to directly measure the valence-band offset (VBO) of the heterojunction. The VBO, {Delta}E{sub V}, was determined as 2.51 {+-} 0.05 eV using the Pb 4p{sup 3/2} and Zn 2p{sup 3/2} core levels as a reference. The conduction-band offset, {Delta}E{sub C}, was, therefore, determined to be 0.59 {+-} 0.05 eV based on the above {Delta}E{sub V} value. This analysis indicates that the PbSe/ZnO heterojunction forms a type I (Straddling Gap) heterostructure.

  13. Valence-band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x-ray photoemission spectroscopy

    International Nuclear Information System (INIS)

    Martin, G.; Botchkarev, A.; Rockett, A.; Morkoc, H.

    1996-01-01

    The valence-band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy. A significant forward endash backward asymmetry was observed in the InN/GaN endash GaN/InN and InN/AlN endash AlN/InN heterojunctions. The asymmetry was understood as a piezoelectric strain effect. We report the valence band discontinuities for InN/GaN=1.05±0.25 eV, GaN/AlN=0.70±0.24 eV, and InN/AlN=1.81±0.20 eV, all in the standard type I lineup. These values obey transitivity to within the experimental accuracy. Tables of photoemission core level binding energies are reported for wurtzite GaN, AlN, and InN. copyright 1996 American Institute of Physics

  14. Valence band electronic structure of Ho-doped La0.67Ca0.33MnO3 using ultra-violet photoemission spectroscopy

    Science.gov (United States)

    Rout, S. K.; Mukharjee, R. N.; Mishra, D. K.; Roul, B. K.; Sekhar, B. R.; Dalai, M. K.

    2017-05-01

    In this manuscript we report the valence band electronic structure of Ho doped La0.67Ca0.33MnO3 using ultraviolet photoemission spectroscopy. We compared the density of states of La0.67Ca0.33MnO3, La0.67Ca0.3Ho0.03MnO3 and La0.64Ho0.03Ca0.33MnO3 near the Fermi level at various temperatures. Significant amount of changes have been observed at higher temperatures (220 K and 300 K) where the near Fermi level density of states increases with Ho doping into La0.67Ca0.33MnO3 indicating the enhancement of magnitude of change in metallicity (conductivity).

  15. Multiwalled Carbon Nanotube Forest Grown via Chemical Vapor Deposition from Iron Catalyst Nanoparticles, by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-25

    Carbon nanotubes (CNTs) have unique chemical and physical properties. Herein, we report an XPS analysis of a forest of multiwalled CNTs using monochromatic Al Kα radiation. Survey scans show only one element: carbon. The carbon 1s peak is centered 284.5 eV. The C 1s envelope also shows the expected π → π* shake-up peak at ca. 291 eV. The valence band and carbon KVV Auger signals are presented. When patterned, the CNT forests can be used as a template for subsequent deposition of metal oxides to make thin layer chromatography plates.1-3

  16. Dynamics of Impurity and Valence Bands in Ga1-xMnxAs Within the Dynamical Mean-Field Approximation

    International Nuclear Information System (INIS)

    Majidi, M.A.; Moreno, Juana; Jarrell, Mark; Fishman, Randy Scott; Aryanpour, K.A.

    2006-01-01

    We calculate the density-of-states and the spectral function of Ga 1-x Mn x As within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasiparticle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling J c at a Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

  17. Thickness-dependent change in the valence band offset of the SiO{sub 2}/Si interface studied using synchrotron-radiation photoemission spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Toyoda, S., E-mail: toyoda.satoshi.4w@kyoto-u.ac.jp; Oshima, M. [Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-08-28

    We have studied the thickness-dependent change in the valence band offset (VBO) of the SiO{sub 2}/Si(001) interface using synchrotron-radiation photoemission spectroscopy with soft and hard X-rays. The SiO{sub 2}-film thickness (T{sub ox}) and X-ray irradiation time (t{sub irrad}) were systematically parameterized to distinguish between the “intrinsic” T{sub ox} effects in the VBOs and the “extrinsic” differential charging phenomena in SiO{sub 2} films on Si substrates. The results revealed that at a spontaneous time (t{sub irrad} ≈ 5 s) that suppresses the differential charging phenomena as much as possible, the experimental VBO abruptly increases as a function of T{sub ox} and gradually saturates to the traditional VBO value range determined by the internal photoemission and photoconduction measurements. This effect is not attributed to the differential charging phenomena, but rather it is attributed to the “intrinsic” T{sub ox}-dependent change in the VBO. The two possible physical behaviors include electronic polarization and image charge. We have derived the electronic polarization contribution from experimental data by carefully describing the effects of the long-range image charges based on the classical dielectric-screening model.

  18. Relation between plasmons and the valence-band density-of-states in polymethylmethacrylate - influence of ion irradiation on damage selectivity

    International Nuclear Information System (INIS)

    Moliton, J.P.; Jussiaux, C.; Trigaud, T.; Lazzaroni, R.; Lhost, O.; Bredas, J.L.; Kihn, Y.; Sevely, J.

    1996-01-01

    A physical model is presented that aims at rationalizing the selectivity of bond breakage observed when polymethylmethacrylate is irradiated by ions in the 10-500 keV energy range. This model, previously proposed by Brandt and Ritchie, is based on electronic collective effects. The coupling between the pure plasma oscillation at omega(p) and the oscillation of free electrons at [omega(k0)(2)](1/2) makes the whole electronic population resonant at the frequency omega(rp) = (omega(p)(2) + [omega(k0)(2)])(1/2). By computing the valence-band density of states, we calculate [omega(k0)(2)] and then deduce the theoretical value of omega(rp). On the other hand, we provide an experimental measurement of omega(rp) and study its dependence on ion fluence by electron-energy-loss spectroscopy. The validity of the model of Brandt and Ritchie is then discussed in the light of both theoretical and experimental data. (author)

  19. Features of the core-valence luminescence and electron energy band structure of A1-xCsxCaCl3 (A = K,Rb) crystals

    International Nuclear Information System (INIS)

    Chornodolskyy, Ya; Stryganyuk, G; Syrotyuk, S; Voloshinovskii, A; Rodnyi, P

    2007-01-01

    From luminescence spectroscopy of CsCaCl 3 , Rb 1-x Cs x CaCl 3 and K 1-x Cs x CaCl 3 crystals, we have found evidence for intrinsic and impurity core-valence luminescence due to the radiative recombination of valence electrons with the holes of intrinsic or impurity 5p Cs + core states. The structural similarity of core-valence luminescence spectra has been revealed for the A 1-x Cs x CaCl 3 (A = K,Rb) crystals investigated. The electron energy structure of the CsCaCl 3 crystal has been calculated using the pseudopotential approach taking into account the gradient corrections for the exchange-correlation energy. The calculated density of the electronic states of CsCaCl 3 has been compared with corresponding parameters obtained from the analysis of core-valence luminescence spectra

  20. Effect of temperature on the valency bands of HDO in water in the liquid and solid states. Effects on the analysis of heavy water using infra-red absorption; Effet de temperature sur les bandes de valence de HDO dans l'eau a l'etat liquide et a l'etat solide - consequences pour l'analyse de l'eau lourde par absorption infra-rouge

    Energy Technology Data Exchange (ETDEWEB)

    Ceccaldi, M [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1964-07-01

    After, a description of the technique used, a qualitative examination is made of the influence of the temperature on the {nu}{sub OH}(3,400 cm{sup -1}) and {nu}{sub OD} (2,500 cm{sup -1}) valence bands of HDO in the liquid state and then during the passage to the solid state. Quantitative examination with two cells of different thickness makes it possible to define the influence of temperature on the residual absorption of the pure liquid (D{sub 2}O or H{sub 2}O and on the valency bands ({nu}{sub OH} and {nu}{sub OD} respectively). It is found that a similar change occurs in the two bands but that the changes in the background are very different. During the passage from the liquid to the solid state the shape of the bands varies considerably but little change occurs in the total intensity. It has been possible to express these results in a simple form which is directly applicable to analytical problems. (authors) [French] Apres un rappel de la technique utilisee, on examine qualitativement l'influence de la temperature sur les bandes de valence {nu}{sub OH} (3400 cm{sup -1}) et {nu}{sub OD} (2500 cm{sup -1}) de HDO a l'etat liquide puis le passage a l'etat solide. L'examen quantitatif, avec deux cuves d'epaisseurs differentes, permet de preciser l'influence de la temperature sur l'absorption residuelle du liquide pur (D{sub 2}O ou H{sub 2}O) et sur les bandes de valence ( {nu}{sub OH} et {nu}{sub OD} respectivement). On constate une evolution parallele de ces bandes mais un comportement tres different du fond continu. Lors du passage de l'etat liquide a l'etat solide, la forme des bandes varie considerablement mais non l'intensite totale. On a pu formuler ces resultats sous une forme simple applicable directement aux problemes analytiques. (auteurs)

  1. Valence and conduction band offsets at low-k a-SiO{sub x}C{sub y}:H/a-SiC{sub x}N{sub y}:H interfaces

    Energy Technology Data Exchange (ETDEWEB)

    King, Sean W., E-mail: sean.king@intel.com; Brockman, Justin; French, Marc; Jaehnig, Milt; Kuhn, Markus [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); French, Benjamin [Ocotillo Materials Laboratory, Intel Corporation, Chandler, Arizona 85248 (United States)

    2014-09-21

    In order to understand the fundamental electrical leakage and reliability failure mechanisms in nano-electronic low-k dielectric/metal interconnect structures, we have utilized x-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy to determine the valence and conduction band offsets present at interfaces between non-porous and porous low-k a-SiO{sub x}C{sub y}:H interlayer dielectrics and a-SiC{sub x}N{sub y}:H metal capping layers. The valence band offset for such interfaces was determined to be 2.7±0.2 eV and weakly dependent on the a-SiOC:H porosity. The corresponding conduction band offset was determined to be 2.1±0.2 eV. The large band offsets indicate that intra metal layer leakage is likely dominated by defects and trap states in the a-SiOC:H and a-SiCN:H dielectrics.

  2. Geochemistry of the Cigar Lake uranium deposit: XPS studies

    International Nuclear Information System (INIS)

    Sunder, S.; Cramer, J.J.; Miller, N.H.

    1996-01-01

    Samples of uranium ore from the Cigar Lake deposit in northern Saskatchewan, Canada, were analyzed using XPS. High-resolution spectra were recorded for the strongest bands of the major elements (U 4f, C 1 s, O 1 s, Pb 4 f, S 2 p, Cu 2 p, Fe 2 p, and the valence region (0-20 eV)) to obtain chemical state information for these samples. In general, the U VI /U IV ratio was very low, i.e., much less than 0.5, the threshold for the oxidative dissolution of UO 2 . The low values of the U VI /U IV ratio observed for samples from the Cigar Lake deposit indicate thermodynamic stability of the uranium ore in the reduced aqueous environment. Similarities between the disposal vault envisaged in the Canadian Nuclear Fuel Waste Management Program and the Cigar Lake deposit suggest that, if geochemical conditions in the vault were to be similar to those in the deposit, the long-term dissolution of UO 2 fuel would be very minimal. (orig.)

  3. The observation of valence band change on resistive switching of epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} film using removable liquid electrode

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Hong-Sub; Park, Hyung-Ho, E-mail: hhpark@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seodaemun-Ku, Seoul 120-749 (Korea, Republic of)

    2015-12-07

    The resistive switching (RS) phenomenon in transition metal oxides (TMOs) has received a great deal of attention for non-volatile memory applications. Various RS mechanisms have been suggested as to explain the observed RS characteristics. Many reports suggest that changes of interface and the role of oxygen vacancies originate in RS phenomena; therefore, in this study, we use a liquid drop of mercury as the top electrode (TE), epitaxial Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} (PCMO) (110) film of the perovskite manganite family for RS material, and an Nb-doped (0.7 at. %) SrTiO{sub 3} (100) single crystal as the substrate to observe changes in the interface between the TE and TMOs. The use of removable liquid electrode Hg drop as TE not only enables observation of the RS characteristic as a bipolar RS curve (counterclockwise) but also facilitates analysis of the valence band of the PCMO surface after resistive switching via photoelectron spectroscopy. The observed I-V behaviors of the low and high resistance states (HRS) are explained with an electrochemical migration model in PCMO film where accumulated oxygen vacancies at the interface between the Hg TE and PCMO (110) surface induce the HRS. The interpreted RS mechanism is directly confirmed via valence band spectrum analysis.

  4. Band Offsets at the Interface between Crystalline and Amorphous Silicon from First Principles

    Science.gov (United States)

    Jarolimek, K.; Hazrati, E.; de Groot, R. A.; de Wijs, G. A.

    2017-07-01

    The band offsets between crystalline and hydrogenated amorphous silicon (a -Si ∶H ) are key parameters governing the charge transport in modern silicon heterojunction solar cells. They are an important input for macroscopic simulators that are used to further optimize the solar cell. Past experimental studies, using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurements, have yielded conflicting results on the band offset. Here, we present a computational study on the band offsets. It is based on atomistic models and density-functional theory (DFT). The amorphous part of the interface is obtained by relatively long DFT first-principles molecular-dynamics runs at an elevated temperature on 30 statistically independent samples. In order to obtain a realistic conduction-band position the electronic structure of the interface is calculated with a hybrid functional. We find a slight asymmetry in the band offsets, where the offset in the valence band (0.29 eV) is larger than in the conduction band (0.17 eV). Our results are in agreement with the latest XPS measurements that report a valence-band offset of 0.3 eV [M. Liebhaber et al., Appl. Phys. Lett. 106, 031601 (2015), 10.1063/1.4906195].

  5. Rondorfite-type structure — XPS and UV–vis study

    Energy Technology Data Exchange (ETDEWEB)

    Dulski, M., E-mail: mateusz.dulski@smcebi.edu.pl [Institute of Material Science, University of Silesia, 75 Pułku Piechoty 1a, 41-500 Chorzow (Poland); A.Chelkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice (Poland); Bilewska, K., E-mail: kbilewska@us.edu.pl [A.Chelkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice (Poland); Silesian Center for Education and Interdisciplinary Research, 75 Pułku Piechoty 1a, 41-500 Chorzow (Poland); Institute of Non-Ferrous Metals, Sowińskiego 5, 44-100 Gliwice (Poland); Wojtyniak, M., E-mail: marcin.wojtyniak@us.edu.pl [Institute of Material Science, University of Silesia, 75 Pułku Piechoty 1a, 41-500 Chorzow (Poland); Silesian Center for Education and Interdisciplinary Research, 75 Pułku Piechoty 1a, 41-500 Chorzow (Poland); Szade, J., E-mail: jacek.szade@us.edu.pl [A.Chelkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice (Poland); Silesian Center for Education and Interdisciplinary Research, 75 Pułku Piechoty 1a, 41-500 Chorzow (Poland); Kusz, J., E-mail: joachim.kusz@us.edu.pl [A.Chelkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice (Poland); Nowak, A., E-mail: ana.maria.nowak@gmail.com [A.Chelkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice (Poland); Silesian Center for Education and Interdisciplinary Research, 75 Pułku Piechoty 1a, 41-500 Chorzow (Poland); Wrzalik, R., E-mail: roman.wrzalik@us.edu.pl [A.Chelkowski Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice (Poland); Silesian Center for Education and Interdisciplinary Research, 75 Pułku Piechoty 1a, 41-500 Chorzow (Poland); and others

    2015-10-15

    Highlights: • Structural and spectroscopic characterization of chlorosilicate mineral, rondorfite. • Characterization of main photoemission lines and valence band spectra. • The study of color origin’s using UV–vis spectroscopy. • Analysis of structural changes in context of origin of natural fluorescence. • Discussion of a new application possibilities of analyzed mineral - Abstract: This paper focuses on X-ray diffraction, X-ray photoelectron and UV–vis spectroscopy of two different (green, orange) rondorfite samples. The differences in the sample color originate from various O/Cl ratios. The orange color was found to be related either to the isomorphic substitution of Fe{sup 3+}/Al{sup 3+} for Mg{sup 2+}, the presence of atypical [MgO{sub 4}] tetrahedrons in crystal structure or electronegativity of the sample. The tetrahedron is known to be very prone to accumulation of impurities and substitute atoms. Moreover, the XPS data showed tetrahedrally coordinated Mg{sup 2+} and isomorphic substitution of Al{sup 3+}/Fe{sup 3+} for Mg{sup 2+}, which influences local disordering and the point defects density and distribution. Non-equilibrium chlorine positions inside the crystal cages as well as Ca-Cl bonds have also been found. The XPS measurements as a function of temperature indicate occurrence of a structural transformation at about 770 K which is accompanied by a rotation of silicate tetrahedra within magnesiosilicate pentamer and luminescence disappearance.

  6. Dynamics of Impurity and Valence Bands in Ga1-xMnxAs Within the Dynamical Mean-Field Approximation

    Energy Technology Data Exchange (ETDEWEB)

    Majidi, M. A. [University of Cincinnati; Moreno, Juana [University of North Dakota, Grand Forks; Jarrell, Mark [University of Cincinnati; Fishman, Randy Scott [ORNL; Aryanpour, K. A. [University of California, Davis

    2006-08-01

    We calculate the density-of-states and the spectral function of Ga1−xMnxAs within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasiparticle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling Jc at a Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

  7. Imaging XPS - a new technique

    International Nuclear Information System (INIS)

    Gurker, N.; Ebel, M.F.; Ebel, H.

    1983-01-01

    XPS imaging promises to be a powerful analytic tool because it enables specific information on both elements and bonding to be recorded on a two-dimensional distribution map. As far as the authors are aware, the only scanning XPS method to date which has been found to be practical is essentially a scanned-particle-beam method, like scanning AES, and it is only applicable to thin film specimens. This paper provides the basic ideas of a new imaging XPS technique based on a quite different concept. It will be applicable to any kind of specimen that can be analysed in a conventional XPS system. It makes use of the dispersion properties of a spherical condenser-type spectrometer and applies a two-dimensional electron detection device for decoding the energy and emission position of an analysed photoelectron. Experimental arrangement and theory of operation are presented. (author)

  8. BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY

    Directory of Open Access Journals (Sweden)

    Hee Jae Kang2

    2011-11-01

    Full Text Available Amorphous GaInZnO (GIZO thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS spectra and valence band fromX-ray photo-electron spectroscopy (XPS spectra, we have demonstrated the energy band alignment of GIZO thin films.The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin filmsare 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 comparedwith In2O3 and ZnO. The valence band offsets (ΔEv decrease from 2.18 to 1.68 eV with increasing amount of Ga inGIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offsetwill provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will beuseful in the design, modeling and analysis of the performance devices applications.

  9. Levels of valence

    Directory of Open Access Journals (Sweden)

    Vera eShuman

    2013-05-01

    Full Text Available The distinction between the positive and the negative is fundamental in our emotional life. In appraisal theories, in particular in the component process model of emotion (Scherer, 1984, 2010, qualitatively different types of valence are proposed based on appraisals of (unpleasantness, goal obstructiveness/conduciveness, low or high power, self- (incongruence, and moral badness/goodness. This multifaceted conceptualization of valence is highly compatible with the frequent observation of mixed feelings in real life. However, it seems to contradict the one-dimensional conceptualization of valence often encountered in psychological theories, and the notion of valence as a common currency used to explain choice behavior. Here, we propose a framework to integrate the seemingly disparate conceptualizations of multifaceted valence and one-dimensional valence by suggesting that valence should be conceived at different levels, micro and macro. Micro-valences correspond to qualitatively different types of evaluations, potentially resulting in mixed feelings, whereas one-dimensional macro-valence corresponds to an integrative common currency to compare alternatives for choices. We propose that conceptualizing levels of valence may focus research attention on the mechanisms that relate valence at one level (micro to valence at another level (macro, leading to new hypotheses and addressing various concerns that have been raised about the valence concept, such as the valence-emotion relation.

  10. Levels of Valence

    Science.gov (United States)

    Shuman, Vera; Sander, David; Scherer, Klaus R.

    2013-01-01

    The distinction between the positive and the negative is fundamental in our emotional life. In appraisal theories, in particular in the component process model of emotion (Scherer, 1984, 2010), qualitatively different types of valence are proposed based on appraisals of (un)pleasantness, goal obstructiveness/conduciveness, low or high power, self-(in)congruence, and moral badness/goodness. This multifaceted conceptualization of valence is highly compatible with the frequent observation of mixed feelings in real life. However, it seems to contradict the one-dimensional conceptualization of valence often encountered in psychological theories, and the notion of valence as a common currency used to explain choice behavior. Here, we propose a framework to integrate the seemingly disparate conceptualizations of multifaceted valence and one-dimensional valence by suggesting that valence should be conceived at different levels, micro and macro. Micro-valences correspond to qualitatively different types of evaluations, potentially resulting in mixed feelings, whereas one-dimensional macro-valence corresponds to an integrative “common currency” to compare alternatives for choices. We propose that conceptualizing levels of valence may focus research attention on the mechanisms that relate valence at one level (micro) to valence at another level (macro), leading to new hypotheses, and addressing various concerns that have been raised about the valence concept, such as the valence-emotion relation. PMID:23717292

  11. Valencies of the lanthanides

    OpenAIRE

    Johnson, David A.; Nelson, Peter G.

    2018-01-01

    The valencies of the lanthanides vary more than was once thought. In addition to valencies associated with a half-full shell, there are valencies associated with a quarter- and three-quarter-full shell. This can be explained on the basis of Slater’s theory of many-electron atoms. The same theory explains the variation in complexing constants in the trivalent state (the “tetrad effect”). Valency in metallic and organometallic compounds is also discussed.

  12. Intermediate valence spectroscopy

    International Nuclear Information System (INIS)

    Gunnarsson, O.; Schoenhammer, K.

    1987-01-01

    Spectroscopic properties of intermediate valence compounds are studied using the Anderson model. Due to the large orbital and spin degeneracy N/sub f/ of the 4f-level, 1/N/sub f/ can be treated as a small parameter. This approach provides exact T = 0 results for the Anderson impurity model in the limit N/sub f/ → ∞, and by adding 1/N/sub f/ corrections some properties can be calculated accurately even for N/sub f/ = 1 or 2. In particular valence photoemission and resonance photoemission spectroscopies are studied. A comparison of theoretical and experimental spectra provides an estimate of the parameters in the model. Core level photoemission spectra provide estimates of the coupling between the f-level and the conduction states and of the f-level occupancy. With these parameters the model gives a fair description of other electron spectroscopies. For typical parameters the model predicts two structures in the f-spectrum, namely one structure at the f-level and one at the Fermi energy. The resonance photoemission calculation gives a photon energy dependence for these two peaks in fair agreement with experiment. The peak at the Fermi energy is partly due to a narrow Kondo resonance, resulting from many-body effects and the presence of a continuous, partly filled conduction band. This resonance is related to a large density of low-lying excitations, which explains the large susceptibility and specific heat observed for these systems at low temperatures. 38 references, 11 figures, 2 tables

  13. Core-level XPS studies of Ce and La intermetallic compounds and their implications for the 4f levels of Ce compounds

    International Nuclear Information System (INIS)

    Freiburg, C.; Fuggle, J.C.; Hillebrecht, F.U.; Zolnierek, Z.; Laesser, R.

    1983-01-01

    The 3d core hole X-ray photoelectron spectra (XPS) of approximately 30 intermetallic compounds of La and Ce are reported. Transitions to final states with approximately f 0 , f 1 and f 2 character are observed in some Ce compounds (f 0 and f 1 for La compounds). The results are discussed in terms of the current ideas of the influence of f-counts and f-levels hybridization on core level lineshapes. We cannot find an explanatoin of the observed spectra consisted with the ''promotial model'' where the 4f-count varies and 4f electron was thought to be entirely promoted to the Ce 5d6s valence bands in some compounds. There may be some small charge transfer from the f level, however. In conjunction with ideas on screening processes in XPS the observed lineshapes suggest coupling of the 4f electrons to other states is strongest in those compounds previously thought to have f 0 character. This coupling increases despite a large increase in the Ce-Ce distance when Ce is diluted with Ni or Pd. Thus it cannot be due to direct f-f interaction and must be attributed to coupling with the other valence electrons; possibly those centred on the partner sites. (orig./EZ) [de

  14. Change in the conversion rate for the E3-isomer sup(235m)U (76,8 eV; 1/2+ → 7/2-) at variation of configurations of the valence band of the atomic shell

    International Nuclear Information System (INIS)

    Grechukhin, D.P.; Soldatov, A.A.

    1983-01-01

    In the framework of the relativistic Hartree-Fock-Slater method, a change of the conversion rate lambda for the E3 isomer (at the transition energy of h/2πω=77 eV) with respect to the rate lambda for the normal configuration of uranium atom, (7ssup(1/2)sup(2)(6dsup(3/2))sup(1)(5fsup(5/2))sup(3), is calcUlated for 14 configurations of the valence band of the atomic shell, including considerable variations of the occupation numbers in 6d, 7s, and 5f orbits. A very strong change Δlambda/lambda 1 is found to be due to variation of the occupation number for the 5f orbit (ΔN(5f) not equal to 0); the change amounts to about 8% per ΔN(5f)=+-1, that is an order of magnitude higher than Δlambda/lambda 1 due to variations of the occupation numbers for other orbits in the cases where N(5f)=const. Though the direct contribution from the 5f electrons to the conversion is very small ( 1 for ΔN(5f) not equal to 0. A rigid correlation between the partial conversion rate and the r. m. s. radius of the orbit is obtained for 6p orbits

  15. Valence band electronic structure of Nb{sub 2}Pd{sub 1.2}Se{sub 5} and Nb{sub 2}Pd{sub 0.95}S{sub 5} superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

    2017-03-15

    We present a comparative study of our valence band photoemission results on Nb{sub 2}Pd{sub 1.2}Se{sub 5} and Nb{sub 2}Pd{sub 0.95}S{sub 5} superconductors which are supported by our DFT based electronic structure calculations. We observe that the VB spectra of both the compounds are qualitatively similar, except for some slight differences in the binding energy positions of all the features. This could be due to the unequal electronegativities of Se and S atom. The calculated density of states (DOS) reveals that the VB features are mainly composed of Pd-Se/S hybridized states. The nature of DOS originating from the distinctly coordinated Pd atoms is different. Further, various Pd-4d and Nb-4d states crossing the Fermi level (E{sub f}) signifies the multiband character of these compounds. In addition, we find a temperature dependent pseudogap in Nb{sub 2}Pd{sub 0.95}S{sub 5} which is absent in Nb{sub 2}Pd{sub 1.2}Se{sub 5}.

  16. Energy band alignment of antiferroelectric (Pb,La)(Zr,Sn,Ti)O{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Klein, Andreas, E-mail: aklein@surface.tu-darmstadt.de [Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); Lohaus, Christian [Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); Reiser, Patrick [Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); InnovationLab GmbH, Speyerer Straße 4, 69115 Heidelberg (Germany); Dimesso, Lucangelo [Technische Universität Darmstadt, Institute of Materials Science, Surface Science Division, Jovanka-Bontschits-Straße 2, 64287 Darmstadt (Germany); Wang, Xiucai; Yang, Tongqing [Tongji University, Key Laboratory of Advanced Civil Engineering Materials (Ministry of Education), Functional Materials Research Laboratory, College of Materials Science and Engineering, Cao’an Road 4800, Shanghai 201804 (China)

    2017-06-15

    Highlights: • Energy band alignment of antiferroelectric PLZST studied by XPS. • A deconvolution procedure is applied to study band alignment of insulating materials. • Contribution of Pb 6s orbitals leads to higher valence band maximum. • Ferroelectric polarization does not contribute to valence band maximum energy. • The variation of Schottky barrier heights indicates no Fermi level pinning in PLZST. - Abstract: The energy band alignment of antiferroelectric (Pb,La)(Zr,Sn,Ti)O{sub 3} is studied with photoelectron spectroscopy using interfaces with high work function RuO{sub 2} and low work function Sn-doped In{sub 2}O{sub 3} (ITO). It is demonstrated how spectral deconvolution can be used to determine absolute Schottky barrier heights for insulating materials with a high accuracy. Using this approach it is found that the valence band maximum energy of (Pb,La)(Zr,Sn,Ti)O{sub 3} is found to be comparable to that of Pb- and Bi-containing ferroelectric materials, which is ∼1 eV higher than that of BaTiO{sub 3}. The results provide additional evidence for the occupation of the 6s orbitals as origin of the higher valence band maximum, which is directly related to the electrical properties of such compounds. The results also verify that the energy band alignment determined by photoelectron spectroscopy of as-deposited electrodes is not influenced by polarisation. The electronic structure of (Pb,La)(Zr,Sn,Ti)O{sub 3} should enable doping of the material without strongly modifying its insulating properties, which is crucial for high energy density capacitors. Moreover, the position of the energy bands should result in a great freedom of selecting electrode materials in terms of avoiding charge injection.

  17. Co-ordination properties of diglycol-amide (DGA) to trivalent curium and lanthanides studied by XAS, XRD and XPS methods

    International Nuclear Information System (INIS)

    Yaita, T.; Hirata, M.; Narita, H.; Tachimori, S.; Yamamoto, H.; Edelstein, N.M.; Bucher, J.J.; Shuh, D.K.; Rao, L.

    2001-01-01

    Co-ordination properties of diglycol-amide (DGA) to trivalent curium and to the trivalent lanthanides were studied by the EXAFS, the XRD and the XPS methods. The structural determinations by both the crystal XRD and the solution EXAFS methods showed that the DGA co-ordinated to the trivalent lanthanide ion in a tridentate fashion: co-ordination of three oxygen atoms of each ligand to the metal ion. The bond distances of Er-O (carbonyl) and Er-O (ether) in the Er-DGA complex were 2.35 Angstrom, and 2.46 Angstrom, respectively, while the atom distances of Cm-O (carbonyl) and Cm-O (ether) in the Cm-DGA complex were 2.42 Angstrom and 3.94 Angstrom, respectively from the EXAFS data for the Cm-DGA complex. Accordingly, the DGA would behave only as a semi-tridentate in the co-ordination to trivalent curium in solution. We determined the valence band structures of the Er-DGA complex by the XPS in order to clarify the bond properties of the complex, and assigned the XPS spectrum by using the DV-DS molecular orbital calculation method. (authors)

  18. Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements

    Energy Technology Data Exchange (ETDEWEB)

    Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro

    2017-04-01

    Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.

  19. Surface state modulation through wet chemical treatment as a route to controlling the electrical properties of ZnO nanowire arrays investigated with XPS

    International Nuclear Information System (INIS)

    Lord, Alex M.; Maffeis, Thierry G.; Allen, Martin W.; Morgan, David; Davies, Philip R.; Jones, Daniel R.; Evans, Jonathan E.; Smith, Nathan A.; Wilks, Steve P.

    2014-01-01

    Highlights: • Direct measurement of the surface band bending exhibited by ZnO nanowires using monochromatic XPS. • Modulation of the surface depletion region using wet chemical treatment (EtOH, H 2 O 2 ). • The measured surface potential barrier agrees with electrical measurements of individual nanowires. • H 2 O 2 depletes the nanowire of charge carriers while EtOH donates electrons at the surface. • EtOH has the effect of restoring the surface potential barrier of oxidised nanowires. - Abstract: ZnO is a wide bandgap semiconductor that has many potential applications including solar cell electrodes, transparent thin film transistors and gas/biological sensors. Since the surfaces of ZnO materials have no amorphous or oxidised layers, they are very environmentally sensitive, making control of their semiconductor properties challenging. In particular, the electronic properties of ZnO nanostructures are dominated by surface effects while surface conduction layers have been observed in thin films and bulk crystals. Therefore, the ability to use the ZnO materials in a controlled way depends on the development of simple techniques to modulate their surface electronic properties. Here, we use monochromatic x-ray photoelectron spectroscopy (XPS) to investigate the use of different wet chemical treatments (EtOH, H 2 O 2 ) to control the electronic properties of ZnO nanowires by modulating the surface depletion region. The valence band and core level XPS spectra are used to explore the relationship between the surface chemistry of the nanowires and the surface band bending

  20. Decoding emotional valence from electroencephalographic rhythmic activity.

    Science.gov (United States)

    Celikkanat, Hande; Moriya, Hiroki; Ogawa, Takeshi; Kauppi, Jukka-Pekka; Kawanabe, Motoaki; Hyvarinen, Aapo

    2017-07-01

    We attempt to decode emotional valence from electroencephalographic rhythmic activity in a naturalistic setting. We employ a data-driven method developed in a previous study, Spectral Linear Discriminant Analysis, to discover the relationships between the classification task and independent neuronal sources, optimally utilizing multiple frequency bands. A detailed investigation of the classifier provides insight into the neuronal sources related with emotional valence, and the individual differences of the subjects in processing emotions. Our findings show: (1) sources whose locations are similar across subjects are consistently involved in emotional responses, with the involvement of parietal sources being especially significant, and (2) even though the locations of the involved neuronal sources are consistent, subjects can display highly varying degrees of valence-related EEG activity in the sources.

  1. Band line-up determination at p- and n-type Al/4H-SiC Schottky interfaces using photoemission spectroscopy

    Science.gov (United States)

    Kohlscheen, J.; Emirov, Y. N.; Beerbom, M. M.; Wolan, J. T.; Saddow, S. E.; Chung, G.; MacMillan, M. F.; Schlaf, R.

    2003-09-01

    The band lineup of p- and n-type 4H-SiC/Al interfaces was determined using x-ray photoemission spectroscopy (XPS). Al was deposited in situ on ex situ cleaned SiC substrates in several steps starting at 1.2 Å up to 238 Å nominal film thickness. Before growth and after each growth step, the sample surface was characterized in situ by XPS. The analysis of the spectral shifts indicated that during the initial deposition stages the Al films react with the ambient surface contamination layer present on the samples after insertion into vacuum. At higher coverage metallic Al clusters are formed. The band lineups were determined from the analysis of the core level peak shifts and the positions of the valence bands maxima (VBM) depending on the Al overlayer thickness. Shifts of the Si 2p and C 1s XPS core levels occurred to higher (lower) binding energy for the p-(n-)type substrates, which was attributed to the occurrence of band bending due to Fermi-level equilibration at the interface. The hole injection barrier at the p-type interface was determined to be 1.83±0.1 eV, while the n-type interface revealed an electron injection barrier of 0.98±0.1 eV. Due to the weak features in the SiC valence bands measured by XPS, the VBM positions were determined using the Si 2p peak positions. This procedure required the determination of the Si 2p-to-VBM binding energy difference (99.34 eV), which was obtained from additional measurements.

  2. Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

    Science.gov (United States)

    Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

    2016-04-01

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  3. Generalized molybdenum oxide surface chemical state XPS determination via informed amorphous sample model

    Energy Technology Data Exchange (ETDEWEB)

    Baltrusaitis, Jonas, E-mail: job314@lehigh.edu [Department of Chemical Engineering, Lehigh University, B336 Iacocca Hall, 111 Research Drive, Bethlehem, PA 18015 (United States); PhotoCatalytic Synthesis group, MESA+ Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, Meander 229, P.O. Box 217, 7500 AE Enschede (Netherlands); Mendoza-Sanchez, Beatriz [CRANN, Chemistry School, Trinity College Dublin, Dublin (Ireland); Fernandez, Vincent [Institut des Matériaux Jean Rouxel, 2 rue de la Houssinière, BP 32229, F-44322 Nantes Cedex 3 (France); Veenstra, Rick [PhotoCatalytic Synthesis group, MESA+ Institute for Nanotechnology, Faculty of Science and Technology, University of Twente, Meander 229, P.O. Box 217, 7500 AE Enschede (Netherlands); Dukstiene, Nijole [Department of Physical and Inorganic Chemistry, Kaunas University of Technology, Radvilenu pl. 19, LT-50254 Kaunas (Lithuania); Roberts, Adam [Kratos Analytical Ltd, Trafford Wharf Road, Wharfside, Manchester, M17 1GP (United Kingdom); Fairley, Neal [Casa Software Ltd, Bay House, 5 Grosvenor Terrace, Teignmouth, Devon TQ14 8NE (United Kingdom)

    2015-01-30

    Highlights: • We analyzed and modeled spectral envelopes of complex molybdenum oxides. • Molybdenum oxide films of varying valence and crystallinity were synthesized. • MoO{sub 3} and MoO{sub 2} line shapes from experimental data were created. • Informed amorphous sample model (IASM) developed. • Amorphous molybdenum oxide XPS envelopes were interpreted. - Abstract: Accurate elemental oxidation state determination for the outer surface of a complex material is of crucial importance in many science and engineering disciplines, including chemistry, fundamental and applied surface science, catalysis, semiconductors and many others. X-ray photoelectron spectroscopy (XPS) is the primary tool used for this purpose. The spectral data obtained, however, is often very complex and can be subject to incorrect interpretation. Unlike traditional XPS spectra fitting procedures using purely synthetic spectral components, here we develop and present an XPS data processing method based on vector analysis that allows creating XPS spectral components by incorporating key information, obtained experimentally. XPS spectral data, obtained from series of molybdenum oxide samples with varying oxidation states and degree of crystallinity, were processed using this method and the corresponding oxidation states present, as well as their relative distribution was elucidated. It was shown that monitoring the evolution of the chemistry and crystal structure of a molybdenum oxide sample due to an invasive X-ray probe could be used to infer solutions to complex spectral envelopes.

  4. Valency and molecular structure

    CERN Document Server

    Cartmell, E

    1977-01-01

    Valency and Molecular Structure, Fourth Edition provides a comprehensive historical background and experimental foundations of theories and methods relating to valency and molecular structures. In this edition, the chapter on Bohr theory has been removed while some sections, such as structures of crystalline solids, have been expanded. Details of structures have also been revised and extended using the best available values for bond lengths and bond angles. Recent developments are mostly noted in the chapter on complex compounds, while a new chapter has been added to serve as an introduction t

  5. Plutonium valence state distributions

    International Nuclear Information System (INIS)

    Silver, G.L.

    1974-01-01

    A calculational method for ascertaining equilibrium valence state distributions of plutonium in acid solutions as a function of the plutonium oxidation number and the solution acidity is illustrated with an example. The method may be more practical for manual use than methods based upon polynomial equations. (T.G.)

  6. Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Gang [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CNRS-International-NTU-THALES Research Alliances/UMI 3288, 50 Nanyang Drive, Singapore 637553 (Singapore); Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), Singapore 117608 (Singapore)

    2016-04-18

    The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

  7. Band offsets of novel CoTiO{sub 3}/Ag{sub 3}VO{sub 4} heterojunction measured by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wangkawong, Kanlayawat [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Tantraviwat, Doldet [Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center (NECTEC), Chachoengsao 24000 (Thailand); Phanichphant, Sukon [Materials Science Research Centre, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Inceesungvorn, Burapat, E-mail: binceesungvorn@gmail.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-01-01

    Highlights: • Band lineup of novel CoTiO{sub 3}/Ag{sub 3}VO{sub 4} composite is determined by semidirect XPS method. • The composite forms a type-II staggered heterojunction. • Valence and conduction-band offsets are 0.2 ± 0.3 and −0.6 ± 0.3 eV, respectively. • Band lineup determination is needed for understanding charge transfer at interfaces. - Abstract: The energy band diagram and band offsets of the novel CoTiO{sub 3}/Ag{sub 3}VO{sub 4} heterojunction photocatalyst are investigated by X-ray photoelectron spectroscopy for the first time. Excluding the strain effect, the valence-band and conduction-band offsets are determined to be 0.2 ± 0.3 eV and −0.6 ± 0.3 eV, respectively. The CoTiO{sub 3}/Ag{sub 3}VO{sub 4} composite forms a type-II heterojunction, for which the photogenerated charge carriers could be effectively separated. The results suggest that determination of the energy band structure is crucial for understanding the photogenerated charge transfer mechanism at the interfaces, hence the corresponding photocatalytic activity and would also be beneficial to the design of new and efficient heterostructure-based photocatalysts.

  8. Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

    International Nuclear Information System (INIS)

    Chen, X.F.; He, G.; Lv, J.G.; Liu, M.; Wang, P.H.; Chen, X.S.; Sun, Z.Q.

    2015-01-01

    The effect of nitrogen on the band offset of sputtering-derived InZnGaO 4 (IGZO)/Si heterostructures has been systematically investigated by x-ray photoelectron spectroscopy (XPS) measurements. Elemental analysis indicates that nitrogen has been successfully incorporated into the IGZO film. By using In 3d 5/2 , In 3d 3/2 and Ga 3d core level (CL) XPS spectra as references, values of valence band offsets (ΔE v ) of have been determined to be 2.56 ± 0.02 and 2.44 ± 0.02 eV for IGZO/Si and IGZO:N/Si heterojunctions, respectively. Using the experimental band gap of 3.59 and 3.50 eV of the IGZO/Si and IGZO:N/Si, the calculated values of conduction band offset (ΔE c ) is 0.09 ± 0.01 and 0.06 ± 0.01 eV, respectively. The results indicate that nitrogen incorporation leads to the reduction in band gap and ΔE v and the slight effect on the ΔE c has also been detected. - Highlights: • α-IGZO/Si and α-IGZO:N/Si heterostructures have been obtained by sputtering. • Nitrogen dependent ΔE v and ΔE v have been determined by XPS measurements. • Nitrogen incorporation in IGZO leads to the reduced band gap and increased ΔE v . • Nitrogen incorporation has no apparent effect on the ΔE c of α-IGZO/Si

  9. Electronic structure study of wide band gap magnetic semiconductor (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} nanocrystals in paramagnetic and ferromagnetic phases

    Energy Technology Data Exchange (ETDEWEB)

    Dwivedi, G. D.; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L. [Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Joshi, Amish G. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Kumar, Shiv; Ghosh, A. K. [Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Chatterjee, Sandip, E-mail: schatterji.app@iitbhu.ac.in [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2016-04-25

    X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} near Fermi-level. XMCD results indicate that Mn{sup 3+} and Mn{sup 4+} spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below T{sub C}. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

  10. X-ray photoemission spectroscopy (XPS) and extended x-ray absorption fine structure (EXAFS) studies of silicate based glasses

    International Nuclear Information System (INIS)

    Karim, D.; Lam, D.J.

    1979-01-01

    The application of the x-ray photoemission spectroscopy (XPS) technique to study the electronic structure and bonding of heavy metal oxides in alkali- and alkali-earth-silicate glasses had been demonstrated. The bonding characteristics of the iron oxide and uranium oxide in sodium silicate glasses were deduced from the changes in the oxygen 1s levels and the heavy metal core levels. It is reasonable to expect that the effect of leaching on the heavy metal ions can be monitored using the appropriate core levels of these ions. To study the effect of leaching on the glass forming network, the valence band structure of the bridging and nonbridging oxygens in sodium silicate glasses were investigated. The measurement of extended x-ray absorption fine-structure (EXAFS) is a relatively new analytical technique for obtaining short range (<5 A) structural information around atoms of a selected species in both solid and fluid systems. Experiments have recently begun to establish the feasibility of using EXAFS to study the bonding of actinides in silicate glasses. Because of the ability of EXAFS to yield specific structural data even in complex multicomponent systems, it could prove to be an invaluable tool in understanding glass structure

  11. XPS characterisation of in situ treated lanthanum oxide and hydroxide using tailored charge referencing and peak fitting procedures

    International Nuclear Information System (INIS)

    Sunding, M.F.; Hadidi, K.; Diplas, S.; Lovvik, O.M.; Norby, T.E.; Gunnaes, A.E.

    2011-01-01

    Highlights: → Gold particles deposited in vacuum as energy reference for insulating samples in XPS. → Separation of La 3d and MNN peaks in XP spectra acquired with Al Kα radiation. → We describe the spectral differences between lanthanum oxide and lanthanum hydroxide. → A doublet in O 1s of La 2 O 3 is ascribed to two distinct oxygen sites in the crystal. - Abstract: A technique is described for deposition of gold nanoparticles under vacuum, enabling consistent energy referencing of X-ray photoelectron spectra obtained from lanthanum hydroxide La(OH) 3 and in situ treated lanthanum oxide La 2 O 3 powders. A method is also presented for the separation of the overlapping lanthanum 3d and MNN peaks in X-ray photoelectron spectra acquired with Al Kα radiation. The lower satellite intensity in La(OH) 3 compared to La 2 O 3 is related to the higher ionicity of the La-O bond in the former compared to the latter compound. The presence of an additional peak in the valence band spectrum of the hydroxide compared to the oxide is attributed to the O-H bond as indicated by density functional theory based calculations. A doublet in the O 1s peak of lanthanum oxide is associated to the presence of two distinct oxygen sites in the crystal structure of this compound.

  12. XPS characterisation of in situ treated lanthanum oxide and hydroxide using tailored charge referencing and peak fitting procedures

    Energy Technology Data Exchange (ETDEWEB)

    Sunding, M.F., E-mail: m.f.sunding@fys.uio.no [Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Hadidi, K. [Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Diplas, S. [Department of Chemistry and Centre for Material Science and Nanotechnology (SMN), University of Oslo, P.O. Box 1033 Blindern, NO-0315 Oslo (Norway); SINTEF Materials and Chemistry, P.O. Box 124 Blindern, NO-0314 Oslo (Norway); Lovvik, O.M. [Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); SINTEF Materials and Chemistry, P.O. Box 124 Blindern, NO-0314 Oslo (Norway); Norby, T.E. [Department of Chemistry and Centre for Material Science and Nanotechnology (SMN), University of Oslo, P.O. Box 1033 Blindern, NO-0315 Oslo (Norway); Gunnaes, A.E. [Department of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2011-07-15

    Highlights: {yields} Gold particles deposited in vacuum as energy reference for insulating samples in XPS. {yields} Separation of La 3d and MNN peaks in XP spectra acquired with Al K{alpha} radiation. {yields} We describe the spectral differences between lanthanum oxide and lanthanum hydroxide. {yields} A doublet in O 1s of La{sub 2}O{sub 3} is ascribed to two distinct oxygen sites in the crystal. - Abstract: A technique is described for deposition of gold nanoparticles under vacuum, enabling consistent energy referencing of X-ray photoelectron spectra obtained from lanthanum hydroxide La(OH){sub 3} and in situ treated lanthanum oxide La{sub 2}O{sub 3} powders. A method is also presented for the separation of the overlapping lanthanum 3d and MNN peaks in X-ray photoelectron spectra acquired with Al K{alpha} radiation. The lower satellite intensity in La(OH){sub 3} compared to La{sub 2}O{sub 3} is related to the higher ionicity of the La-O bond in the former compared to the latter compound. The presence of an additional peak in the valence band spectrum of the hydroxide compared to the oxide is attributed to the O-H bond as indicated by density functional theory based calculations. A doublet in the O 1s peak of lanthanum oxide is associated to the presence of two distinct oxygen sites in the crystal structure of this compound.

  13. Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    He, G.; Chen, X.F.; Lv, J.G.; Fang, Z.B.; Liu, Y.M.; Zhu, K.R.; Sun, Z.Q.; Liu, M.

    2015-01-01

    Highlights: • Band offsets in HfTiO/InGaZnO 4 heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE v ) of sputter deposited HfTiO/InZnGaO 4 (IGZO) heterostructures. A ΔE v value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure

  14. Thorium effect on the oxidation of uranium: Photoelectron spectroscopy (XPS/UPS) and cyclic voltammetry (CV) investigation on (U{sub 1−x}Th{sub x})O{sub 2} (x = 0 to 1) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Cakir, P., E-mail: pelincakir@outlook.com [European Commission, Joint Research Centre, P.O. Box 2340, D-76125, Karlsruhe (Germany); Department of Radiation Science and Technology, Delft University of Technology, Mekelweg 15, 2629, JB Delft (Netherlands); Eloirdi, R.; Huber, F. [European Commission, Joint Research Centre, P.O. Box 2340, D-76125, Karlsruhe (Germany); Konings, R.J.M. [European Commission, Joint Research Centre, P.O. Box 2340, D-76125, Karlsruhe (Germany); Department of Radiation Science and Technology, Delft University of Technology, Mekelweg 15, 2629, JB Delft (Netherlands); Gouder, T. [European Commission, Joint Research Centre, P.O. Box 2340, D-76125, Karlsruhe (Germany)

    2017-01-30

    Highlights: • XRD and XPS data of U{sub x}Th{sub 1-x}O{sub 2} films are in agreement with data obtained on bulk. • Oxygen affinity of thorium is much stronger than uranium. • Oxidation of uranium decreases as a function of thorium in the matrix. • XPS made pre and post CV shows thorium enrichment indicating a protective layer. • Higher initial uranium content is directly proportional to higher oxidation states. - Abstract: Thin films of U{sub 1−x}Th{sub x}O{sub 2} (x = 0 to 1) have been deposited via reactive DC sputter technique and characterized by X-ray/Ultra-violet Photoelectron Spectroscopy (XPS/UPS), X-ray Powder Diffractometer (XRD) and Cyclic Voltammetry (CV) in order to understand the effect of Thorium on the oxidation mechanism. During the deposition, the competition between uranium and thorium for oxidation showed that thorium has a much higher affinity for oxygen. Deposition conditions, time and temperature were also the subject of this study, to look at the homogeneity and the stability of the films. While core level and valence band spectra were not altered by the time of deposition, temperature was affecting the oxidation state of uranium and the valence band due to the mobility increase of oxygen through the film. X-ray diffraction patterns, core level spectra obtained for U{sub 1−x}Th{sub x}O{sub 2} versus the composition showed that lattice parameters follow the Vegard's law and together with the binding energies of U-4f and Th-4f are in good agreement with literature data obtained on bulk compounds. To study the effect of thorium on the oxidation of U{sub 1−x}Th{sub x}O{sub 2} films, we used CV experiments at neutral pH of a NaCl solution in contact with air. The results indicated that thorium has an effect on the uranium oxidation as demonstrated by the decrease of the current of the oxidation peak of uranium. XPS measurements made before and after the CV, showed a relative enrichment of thorium at the extent of uranium at

  15. Micro-Valences: Affective valence in neutral everyday objects

    Directory of Open Access Journals (Sweden)

    Sophie eLebrecht

    2012-04-01

    Full Text Available Affective valence influences both our cognition and our perception of the world. Indeed, the speed and quality with which we recognize objects in a visual scene can vary dramatically depending on its affective content. However, affective processing of visual objects has been typically studied using only stimuli with strong affective valences (e.g., guns or roses. Here we explore whether affective valence must be strong or obvious to exert an effect on our perception. We conclude that the majority of objects carry some affective valence (micro-valences and, thus, nominally neutral objects are not really neutral. Functionally, the perception of valence in everyday objects facilitates perceptually-driven choice behavior, decision-making, and affective responses.

  16. Micro-Valences: Affective valence in neutral everyday objects

    OpenAIRE

    Sophie eLebrecht; Moshe eBar; Lisa F Barrett; Michael J Tarr

    2012-01-01

    Affective valence influences both our cognition and our perception of the world. Indeed, the speed and quality with which we recognize objects in a visual scene can vary dramatically depending on its affective content. However, affective processing of visual objects has been typically studied using only stimuli with strong affective valences (e.g., guns or roses). Here we explore whether affective valence must be strong or obvious to exert an effect on our perception. We conclude that the maj...

  17. Dynamics of Impurity and Valence Bands in Ga1-xMnzAs Within the Dynamical Mean Field Approximation

    Energy Technology Data Exchange (ETDEWEB)

    Majidi, M. A. [University of Cincinnati; Moreno, Juana [University of North Dakota, Grand Forks; Jarrell, Mark [University of Cincinnati; Fishman, Randy Scott [ORNL; Aryanpour, K. A. [University of California, Davis

    2006-01-01

    We calculate the density-of-states and the spectral function of Ga{sub 1-x}Mn{sub x}As within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasiparticle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling J{sub c} at a Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

  18. Modification of band offsets of InGaZnO{sub 4}/Si heterojunction through nitrogenation treatment

    Energy Technology Data Exchange (ETDEWEB)

    Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); He, G., E-mail: hegang@ahu.edu.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Lv, J.G., E-mail: jglv@hftc.edu.cn [Department of Physics and Electronic Engineering, Hefei Normal University, Hefei 230061 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China); Wang, P.H. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.S. [National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, 500 Yutian Road, Shanghai 200083 (China); Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China)

    2015-10-25

    The effect of nitrogen on the band offset of sputtering-derived InZnGaO{sub 4} (IGZO)/Si heterostructures has been systematically investigated by x-ray photoelectron spectroscopy (XPS) measurements. Elemental analysis indicates that nitrogen has been successfully incorporated into the IGZO film. By using In 3d{sub 5/2}, In 3d{sub 3/2} and Ga 3d core level (CL) XPS spectra as references, values of valence band offsets (ΔE{sub v}) of have been determined to be 2.56 ± 0.02 and 2.44 ± 0.02 eV for IGZO/Si and IGZO:N/Si heterojunctions, respectively. Using the experimental band gap of 3.59 and 3.50 eV of the IGZO/Si and IGZO:N/Si, the calculated values of conduction band offset (ΔE{sub c}) is 0.09 ± 0.01 and 0.06 ± 0.01 eV, respectively. The results indicate that nitrogen incorporation leads to the reduction in band gap and ΔE{sub v} and the slight effect on the ΔE{sub c} has also been detected. - Highlights: • α-IGZO/Si and α-IGZO:N/Si heterostructures have been obtained by sputtering. • Nitrogen dependent ΔE{sub v} and ΔE{sub v} have been determined by XPS measurements. • Nitrogen incorporation in IGZO leads to the reduced band gap and increased ΔE{sub v}. • Nitrogen incorporation has no apparent effect on the ΔE{sub c} of α-IGZO/Si.

  19. Soft electronic structure modulation of surface (thin-film) and bulk (ceramics) morphologies of TiO{sub 2}-host by Pb-implantation: XPS-and-DFT characterization

    Energy Technology Data Exchange (ETDEWEB)

    Zatsepin, D.A. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Boukhvalov, D.W., E-mail: danil@hanyang.ac.kr [Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Theoretical Physics and Applied Mathematics Department, Ural Federal University, Mira Street 19, 620002 Yekaterinburg (Russian Federation); Gavrilov, N.V. [Institute of Electrophysics, Russian Academy of Sciences, Ural Branch, 620990 Yekaterinburg (Russian Federation); Zatsepin, A.F. [Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Shur, V.Ya.; Esin, A.A. [Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave, 620000 Yekaterinburg (Russian Federation); Kim, S.S. [School of Materials Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of); Kurmaev, E.Z. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation)

    2017-04-01

    Highlights: • Experiment and theory demonstrate significant difference between patterns of Pb-ion implantation in TiO{sub 2}. • In bulk TiO{sub 2} Pb-impurities leads formation of PbO phase. • On the surface of TiO{sub 2}:Pb occur formation of PbxOy configurations. • In both bulk and surface TiO{sub 2}:Pb occur decreasing of the bandgap by shift of valence band about 1 eV up. - Abstract: The results of combined experimental and theoretical study of substitutional and clustering effects in the structure of Pb-doped TiO{sub 2}-hosts (bulk ceramics and thin-film morphologies) are presented. Pb-doping of the bulk and thin-film titanium dioxide was made with the help of pulsed ion-implantation without posterior tempering (Electronic Structure Modulation Mode). The X-ray photoelectron spectroscopy (XPS) qualification of core-levels and valence bands and Density-Functional Theory (DFT) calculations were employed in order to study the yielded electronic structure of Pb-ion modulated TiO{sub 2} host-matrices. The combined XPS-and-DFT analysis has agreed definitely with the scenario of the implantation stimulated appearance of PbO-like structures in the bulk morphology of TiO{sub 2}:Pb, whereas in thin-film morphology the PbO{sub 2}-like structure becomes dominating, essentially contributing weak O/Pb bonding (Pb{sub x}O{sub y} defect clusters). The crucial role of the oxygen hollow-type vacancies for the process of Pb-impurity “insertion” into the structure of bulk TiO{sub 2} was pointed out employing DFT-based theoretical background. Both experiment and theory established clearly the final electronic structure re-arrangement of the bulk and thin-film morphologies of TiO{sub 2} because of the Pb-modulated deformation and shift of the initial Valence Base-Band Width about 1 eV up.

  20. Valence control of cobalt oxide thin films by annealing atmosphere

    International Nuclear Information System (INIS)

    Wang Shijing; Zhang Boping; Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping

    2011-01-01

    The cobalt oxide (CoO and Co 3 O 4 ) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH 3 OCH 2 CH 2 OH and Co(NO 3 ) 2 .6H 2 O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co 3 O 4 thin film was obtained by annealing in air at 300-600, and N 2 at 300, and transferred to CoO thin film by raising annealing temperature in N 2 . The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  1. Band offsets in HfTiO/InGaZnO{sub 4} heterojunction determined by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    He, G., E-mail: ganghe01@issp.ac.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Lv, J.G., E-mail: jglv@hftc.edu.cn [School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601 (China); Fang, Z.B., E-mail: csfzb@usx.edu.cn [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Liu, Y.M.; Zhu, K.R.; Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

    2015-09-05

    Highlights: • Band offsets in HfTiO/InGaZnO{sub 4} heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE{sub v}) of sputter deposited HfTiO/InZnGaO{sub 4} (IGZO) heterostructures. A ΔE{sub v} value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure.

  2. Lattice and Valence Electronic Structures of Crystalline Octahedral Molybdenum Halide Clusters-Based Compounds, Cs2[Mo6X14] (X = Cl, Br, I), Studied by Density Functional Theory Calculations.

    Science.gov (United States)

    Saito, Norio; Cordier, Stéphane; Lemoine, Pierric; Ohsawa, Takeo; Wada, Yoshiki; Grasset, Fabien; Cross, Jeffrey S; Ohashi, Naoki

    2017-06-05

    The electronic and crystal structures of Cs 2 [Mo 6 X 14 ] (X = Cl, Br, I) cluster-based compounds were investigated by density functional theory (DFT) simulations and experimental methods such as powder X-ray diffraction, ultraviolet-visible spectroscopy, and X-ray photoemission spectroscopy (XPS). The experimentally determined lattice parameters were in good agreement with theoretically optimized ones, indicating the usefulness of DFT calculations for the structural investigation of these clusters. The calculated band gaps of these compounds reproduced those experimentally determined by UV-vis reflectance within an error of a few tenths of an eV. Core-level XPS and effective charge analyses indicated bonding states of the halogens changed according to their sites. The XPS valence spectra were fairly well reproduced by simulations based on the projected electron density of states weighted with cross sections of Al K α , suggesting that DFT calculations can predict the electronic properties of metal-cluster-based crystals with good accuracy.

  3. Study of interfaces and band offsets in TiN/amorphous LaLuO3 gate stacks

    KAUST Repository

    Mitrovic, Ivona Z.

    2011-07-01

    TiN/LaLuO3 (LLO) gate stacks formed by molecular beam deposition have been investigated by X-ray photoelectron spectroscopy, medium energy ion scattering, spectroscopic ellipsometry, scanning transmission electron microscopy, electron energy loss spectroscopy and atomic force microscopy. The results indicate an amorphous structure for deposited LLO films. The band offset between the Fermi level of TiN and valence band of LLO is estimated to be 2.65 ± 0.05 eV. A weaker La-O-Lu bond and a prominent Ti2p sub-peak which relates to Ti bond to interstitial oxygen have been identified for an ultra-thin 1.7 nm TiN/3 nm LLO gate stack. The angle-dependent XPS analysis of Si2s spectra as well as shifts of La4d, La3d and Lu4d core levels suggests a silicate-type with Si-rich SiOx LLO/Si interface. Symmetrical valence and conduction band offsets for LLO to Si of 2.2 eV and the bandgap of 5.5 ± 0.1 eV have been derived from the measurements. The band alignment for ultra-thin TiN/LLO gate stack is affected by structural changes. Copyright © 2011 Published by Elsevier B.V. All rights reserved.

  4. On calculating intensity from XPS spectra

    International Nuclear Information System (INIS)

    Vegh, Janos

    2006-01-01

    The intensity calculation is the basis for all quantitative applications of electron spectroscopy. Unfortunately, some misinterpreted terms are used and correctly interpreted terms are misused in the overwhelming majority of publications in XPS, including most textbooks as well as accepted and proposed standards. Due to this mistake the number of the detected electrons is given as having dimension of energy (?) and also the formulas for calculating the peak area and its standard deviation are wrong. Since in all other spectroscopic fields the number of the detected particles is dimensionless, continuing this practice leads to isolating XPS from both other measurement sciences and theory, because the measured total intensity in XPS is simply not comparable to the ones derived with other spectroscopic methods or theoretically. Therefore, the basic measuring processes and terms are critically reviewed and their physically correct interpretation is given. This interpretation reveals that the error is hidden in the incorrect interpretation of both the measurement process and the measured quantity. It is shown that through using the correct interpretation both the dimensions of the intensity calculated from electron spectroscopic measurements as well as the formulas related to the intensity and its standard deviation will agree with all other spectroscopic fields

  5. Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations

    Science.gov (United States)

    Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Shkumat, P. N.; Myronchuk, G. L.; Khvyshchun, M.; Fedorchuk, A. O.; Parasyuk, O. V.; Khyzhun, O. Y.

    2015-04-01

    High-quality single crystal of cesium mercury tetraiodide, Cs2HgI4, has been synthesized by the vertical Bridgman-Stockbarger method and its crystal structure has been refined. In addition, electronic structure and optical properties of Cs2HgI4 have been studied. For the crystal under study, X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces have been measured. The present X-ray photoelectron spectroscopy (XPS) results indicate that the Cs2HgI4 single crystal surface is very sensitive with respect to Ar+ ion-irradiation. In particular, Ar+ bombardment of the single crystal surface alters the elemental stoichiometry of the Cs2HgI4 surface. To elucidate peculiarities of the energy distribution of the electronic states within the valence-band and conduction-band regions of the Cs2HgI4 compound, we have performed first-principles band-structure calculations based on density functional theory (DFT) as incorporated in the WIEN2k package. Total and partial densities of states for Cs2HgI4 have been calculated. The DFT calculations reveal that the I p states make the major contributions in the upper portion of the valence band, while the Hg d, Cs p and I s states are the dominant contributors in its lower portion. Temperature dependence of the light absorption coefficient and specific electrical conductivity has been explored for Cs2HgI4 in the temperature range of 77-300 K. Main optical characteristics of the Cs2HgI4 compound have been elucidated by the first-principles calculations.

  6. Extended study on oxidation behaviors of UN0.68 and UN1.66 by XPS

    Science.gov (United States)

    Luo, Lizhu; Hu, Yin; Pan, Qifa; Long, Zhong; Lu, Lei; Liu, Kezhao; Wang, Xiaolin

    2018-04-01

    The surface oxidation behaviors of UN0.68 and UN1.66 thin films are investigated by X-ray photoelectron spectroscopy (XPS), and the traditional U4f/N1s, O1s, valence band spectra as well as the unconventional U4d and U5d spectra are collected for the understanding of their oxidation behavior in-depth. Similar asymmetrical peak shape of the U4f spectra to uranium is observed for both uranium nitrides, despite of a slight shift to higher energy side for UN1.66 clean surface. However, significant difference among the corresponding spectra of UN0.68 and UN1.66 during oxidation reveals the distinctive properties of each own. The coexistence of UO2-x, UO2 and UO2-x.Ny on UN0.68 surface results in the peculiar features of U4f spectra as well as the others within the XPS energy scale, where peaks of the oxidized species firstly shift to higher energy side compared to the clean surface, and then return closely towards those of stoichiometric UO2. For UN1.66, the generation of U-N-O ternary compounds on the surface is identified with the symmetrical U4f peaks at 379.9eV and 390.8 eV, which locate intermediate between UO2 and UN1.66, and gradually expanding to higher energy side during the progressive oxidation. Furthermore, the formation of N-O species on UN1.66 surface is also detected as an oxidation product. The metallic character of UN1.66 is identified by the intense signal at Fermi level, which is greatly suppressed by the increasing oxygen exposure and implies the weakening metallic properties of the as-generated U-N-O compounds. Higher uranium oxides, such as UO3 and U4O9, are deduced to be the final oxidation products, and a multistage mechanism for UN1.66 following the exposure to oxygen is discussed.

  7. XPS-and-DFT analyses of the Pb 4f — Zn 3s and Pb 5d — O 2s overlapped ambiguity contributions to the final electronic structure of bulk and thin-film Pb-modulated zincite

    Energy Technology Data Exchange (ETDEWEB)

    Zatsepin, D.A. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Boukhvalov, D.W., E-mail: danil@hanyang.ac.kr [Department of Chemistry, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Theoretical Physics and Applied Mathematics Department, Ural Federal University,Mira Street 19, 620002 Yekaterinburg (Russian Federation); Gavrilov, N.V. [Institute of Electrophysics, Russian Academy of Sciences, Ural Branch, 620990 Yekaterinburg (Russian Federation); Kurmaev, E.Z. [M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620990 Yekaterinburg (Russian Federation); Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Zatsepin, A.F. [Institute of Physics and Technology, Ural Federal University, 620002 Yekaterinburg (Russian Federation); Cui, L. [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Shur, V. Ya.; Esin, A.A. [Institute of Natural Sciences, Ural Federal University, 51 Lenin Ave, 620000 Yekaterinburg (Russian Federation)

    2017-05-31

    Highlights: • Two modes of ZnO:Pb in the bulk and surface morphologies were established: the high- and low-interaction. • It was shown the ambiguity contribution of Pb 4f − Zn 3s and Pb 5d − O 2s states into final electronic structure. • The main type of defects is PbO-like with some PbO{sub 2}-like contributions. • An applied wurzite-like structural model well agrees with experimental data obtained for zincite. - Abstract: The electronic structures of zincite Pb-modulated bulk and thin-films were studied via X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) techniques. Both XPS data and DFT-calculations allowed the derivation of two different Pb-embedding scenarios into the ZnO-hosts. These included the high-interaction mode of Pb-impurity with initial zinc-oxygen host-lattice for the bulk morphology, accompanied with low Pb-metal losses; and the low-interaction mode for thin-films, where there was intake of Pb-impurities into the hollows of the surface. Despite dissimilar mechanisms of Pb-impurity accumulation and distribution in the bulk and thin-films zincite host-matrices, the strong Pb 4f — Zn 3s and Pb 5d — O 2s overlapped ambiguity contribution to the appropriate core-level structure and valence bands was established by XPS analysis and reproduced with the help of DFT-calculations. It was shown that the microscopic structure of the embedded lead-impurity played a crucial role in the Pb ion-beam stimulated synthesis of secondary lead-oxygen phases via large-area defect fabrication, and the difference among zincite and wurzite polymorphs played almost no role in this case.

  8. XPS - an essential tool in biomaterial research

    Energy Technology Data Exchange (ETDEWEB)

    StJohn, H.A.W.; Greisser, H.J. [Commonwealth Scientific and Industrial Research Organization (CSIRO), Clayton, VIC (Australia). Molecular Science

    1999-12-01

    Full text: Increased life expectancy has markedly enhanced the need for biomedical devices to combat life-threatening conditions (e.g., pacemakers, artificial blood vessels) or improve the quality of life (e.g., intraocular lenses, artificial ligaments, contact lenses). While the biomedical device industry has delivered remarkable benefits, many existing and emerging needs and applications are not adequately met with existing synthetic materials. Depending on the application, a biomaterial needs to meet a number of requirements to be `biocompatible`, such as appropriate mechanical properties, transparency, resistance to enzymatic degradation, and appropriate biological responses by the host environment. Surface science and surface analysis plays a key role in understanding and optimizing the molecular interfacial interactions between synthetic materials surfaces and biological media which lead to biological responses to implants. Many biological molecules such as proteins and lipids have surfactant activity and respond to interfaces on contact. Thus, an important part of achieving `biocompatibility` is to produce an appropriate surface chemical composition that avoids undesirable biological consequences triggered by biological molecules recognizing a `foreign` material interface. XPS surface analysis has proved uniquely suitable for studying several aspects of biomaterials. In order to interpret biological responses in terms of surface chemistry, it is essential that the surface be well characterized. However, for polymers this can be quite a challenge due to the inherent mobility of polymer chains. For instance, polyurethanes present a surface chemistry that differs from the `bulk` chemistry. It is often desirable to utilize a bulk material with desirable bulk properties and improve its biocompatibility by the application of a surface modification or a thin coating. XPS has been used to verify the intended coating chemistry and the uniformity of thin coatings. On

  9. XPS - an essential tool in biomaterial research

    International Nuclear Information System (INIS)

    StJohn, H.A.W.; Greisser, H.J.

    1999-01-01

    Full text: Increased life expectancy has markedly enhanced the need for biomedical devices to combat life-threatening conditions (e.g., pacemakers, artificial blood vessels) or improve the quality of life (e.g., intraocular lenses, artificial ligaments, contact lenses). While the biomedical device industry has delivered remarkable benefits, many existing and emerging needs and applications are not adequately met with existing synthetic materials. Depending on the application, a biomaterial needs to meet a number of requirements to be 'biocompatible', such as appropriate mechanical properties, transparency, resistance to enzymatic degradation, and appropriate biological responses by the host environment. Surface science and surface analysis plays a key role in understanding and optimizing the molecular interfacial interactions between synthetic materials surfaces and biological media which lead to biological responses to implants. Many biological molecules such as proteins and lipids have surfactant activity and respond to interfaces on contact. Thus, an important part of achieving 'biocompatibility' is to produce an appropriate surface chemical composition that avoids undesirable biological consequences triggered by biological molecules recognizing a 'foreign' material interface. XPS surface analysis has proved uniquely suitable for studying several aspects of biomaterials. In order to interpret biological responses in terms of surface chemistry, it is essential that the surface be well characterized. However, for polymers this can be quite a challenge due to the inherent mobility of polymer chains. For instance, polyurethanes present a surface chemistry that differs from the 'bulk' chemistry. It is often desirable to utilize a bulk material with desirable bulk properties and improve its biocompatibility by the application of a surface modification or a thin coating. XPS has been used to verify the intended coating chemistry and the uniformity of thin coatings. On

  10. Valence effects of sorption: laboratory control of valence state

    International Nuclear Information System (INIS)

    Meyer, R.E.; Arnold, W.D.; Case, F.I.

    1984-01-01

    Estimation of the rates of migration of nuclides from nuclear waste repositories required knowledge of the interaction of these nuclides with the components of the geological formations in the path of the migration. These interactions will be dependent upon the valence state and speciation of the nuclide. If the valence state is not known, then there can be little confidence in use of the data for safety analysis. An electrochemical method of valence state control was developed which makes use of a porous electrode in a flow system containing a column of the adsorbent. By use of this method and solvent extraction analyses of the valence states, a number of reactions of interest to HLW repositories were investigated. These include the reduction of Np(V) and Tc(VII) by crushed basalt and other minerals. For the reduction of Np(V) by basalt, the experiments indicate that sorption on basalt increases with pH and that most of the Np is reduced to Np(IV). The adsorbed Np(IV) is very difficult to remove from the basalt. For the experiments with Tc(VII), the results are considerably more complicated. The results of these experiments are used to assess some of the techniques and methods currently used in safety analyses of proposed HLW repositories. Perhaps the most important consideration is that predictive modeling of valence change reactions, such as the reduction of Np(V) and Tc(VII), must be used with considerable caution, and the occurrence of such reactions should be verified as best as possible with experiments using valence state control and analyses. 13 references, 3 figures, 1 table

  11. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    Science.gov (United States)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-10-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

  12. Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

    2007-01-01

    MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior

  13. A study of the valence shell electronic states of s-triazine by photoabsorption spectroscopy and ab initio calculations

    Energy Technology Data Exchange (ETDEWEB)

    Holland, D.M.P., E-mail: david.holland@stfc.ac.uk [Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD (United Kingdom); Shaw, D.A. [Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD (United Kingdom); Stener, M.; Decleva, P. [Dipartimento di Scienze Chimiche e Farmaceutiche, Università degli Studi di Trieste, Via L. Giorgieri, I-34127 Trieste (Italy); Consorzio Interuniversitario Nazionale per la Scienze e Tecnologia dei Materiali, INSTM, Unità di Trieste (Italy); CNR-IOM, Trieste (Italy); Coriani, S. [Dipartimento di Scienze Chimiche e Farmaceutiche, Università degli Studi di Trieste, Via L. Giorgieri, I-34127 Trieste (Italy); Consorzio Interuniversitario Nazionale per la Scienze e Tecnologia dei Materiali, INSTM, Unità di Trieste (Italy); Aarhus Institute of Advanced Studies, Aarhus University, 8000 Aarhus C (Denmark)

    2016-09-30

    Highlights: • The valence shell photoabsorption spectrum of s-triazine has been measured. • Electronic structure calculated with TDDFT and coupled cluster approaches. • Assignments proposed for Rydberg and valence states. • Mixing between Rydberg and valence states important. - Abstract: The absolute photoabsorption cross section of s-triazine has been measured between 4 and 40 eV, and is dominated by bands associated with valence states. Structure due to Rydberg excitations is both weak and irregular. Jahn-Teller interactions affect the vibronic structure observed in the Rydberg absorption bands due to excitation from the 1e″ or 6e′ orbitals. The interpretation of the experimental spectrum has been guided by transition energies and oscillator strengths, for Rydberg and valence states, calculated with the time-dependent version of density functional theory and with the coupled cluster linear response approach. The theoretical studies indicate that Rydberg/Rydberg and Rydberg/valence mixing is important.

  14. Valence instabilities as a source of actinide system inconsistencies

    International Nuclear Information System (INIS)

    Sandenaw, T.A.

    1979-01-01

    Light actinide elements alone, and in some of their alloys, may exist as a static or dynamic mixture of two configurations. Such a state can explain both a resistivity maximum and lack of magnetic order observed in so many actinide materials, and still be compatible with the existence of f-electrons in narrow bands. Impurity elements may stabilize slightly different intermediate valence states in U, Np, and Pu, thus contributing to inconsistencies in published results. The physical property behavior of mixed-valence, rare-earth compounds is very much like that observed in development of antiphase (martensitic) structures. Martensitic transformations in U, Np, and Pu, from high-temperature b. c. c. to alpha phase, may be a way of ordering an alloy-like metal of mixed or intermediate valence. The relative stability of each phase structure may depend upon its electron-valence ratio. A Hubbard model for electron correlations in a narrow energy band has been invoked in most recent theories for explaining light actinide behavior. Such a model may also be applicable to crystal symmetry changes in martensitic transformations in actinides

  15. Localized description of valence fluctuations

    International Nuclear Information System (INIS)

    Alascio, B.; Allub, R.; Aligia, A.

    1979-07-01

    The authors set up a model for intermediate valence equivalent to the ''atomic'' limit of the Anderson Hamiltonian. Detailed analysis of this model shows that most of the essential characteristics of valence fluctuators are already present in this crudely simplified Hamiltonian. The spin-spin and the 4f charge-charge correlation functions are studied and it is shown that it is possible to define a spin fluctuation frequency ωsub(s.f.) and a charge fluctuation frequency ωsub(ch.f.).ωsub(s.f.) and ωsub(ch.f.) can differ considerably for some values of the parameters of the model. The magnetic susceptibility and the specific heat are calculated as functions of temperature and it is shown how the results simulate the behaviour found in valence fluctuators. (author)

  16. Tl Cuprate Superconductors Studied by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Vasquez, R. P. [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109-8099 (United States); Siegal, M. P. [Sandia National Laboratories, Albuquerque, NM 87185-1421 (United States); Overmyer, D. L. [Sandia National Laboratories, Albuquerque, NM 87185-1421 (United States); Ren, Z. F. [Department of Chemistry, State University of New York, Buffalo, NY 14260-3000 (United States); Lao, J. Y. [Department of Chemistry, State University of New York, Buffalo, NY 14260-3000 (United States); Wang, J. H. [Department of Chemistry, State University of New York, Buffalo, NY 14260-3000 (United States)

    1999-07-01

    XPS measurements on epitaxial thin films of the Tl cuprate superconductors Tl2Ba2CaCu2O8, Tl2Ba2Ca2Cu3O10, and Tl0.78Bi0.22Ba0.4Sr1.6Ca2Cu3O9-{delta} are presented. These data, together with previous measurements in this lab on Tl2Ba2CuO6-{delta} and TlBa2CaCu2O7-{delta}, comprise a comprehensive data set for comparison of Tl cuprates in which the number of Tl-O and Cu-O layers, and hence the chemical and electronic properties, vary. (c) 2000 American Vacuum Society.

  17. Tl Cuprate Superconductors Studied by XPS

    International Nuclear Information System (INIS)

    Vasquez, R. P.; Siegal, M. P.; Overmyer, D. L.; Ren, Z. F.; Lao, J. Y.; Wang, J. H.

    1999-01-01

    XPS measurements on epitaxial thin films of the Tl cuprate superconductors Tl2Ba2CaCu2O8, Tl2Ba2Ca2Cu3O10, and Tl0.78Bi0.22Ba0.4Sr1.6Ca2Cu3O9-δ are presented. These data, together with previous measurements in this lab on Tl2Ba2CuO6-δ and TlBa2CaCu2O7-δ, comprise a comprehensive data set for comparison of Tl cuprates in which the number of Tl-O and Cu-O layers, and hence the chemical and electronic properties, vary. (c) 2000 American Vacuum Society

  18. XPS analysis of boron doped heterofullerenes

    Energy Technology Data Exchange (ETDEWEB)

    Schnyder, B; Koetz, R [Paul Scherrer Inst. (PSI), Villigen (Switzerland); Muhr, H J; Nesper, R [ETH Zurich, Zurich (Switzerland)

    1997-06-01

    Boron heterofullerenes were generated through arc-evaporation of doped graphite rods in a helium atmosphere. According to mass spectrometric analysis only mono-substituted fullerenes like C{sub 59}B, C{sub 69}B and higher homologues together with a large fraction of higher undoped fullerenes were extracted and enriched when pyridine was used as the solvent. XPS analysis of the extracts indicated the presence of two boron species with significantly different binding energies. One peak was assigned to borid acid. The second one corresponds to boron in the fullerene cage, which is mainly C{sub 59}B, according to the mass spectrum. This boron is in a somewhat higher oxidation state than that of ordinary boron-carbon compounds. The reported synthesis and extraction procedure opens a viable route for production of macroscopic amounts of these compounds. (author) 2 figs., 1 tab., 7 refs.

  19. Attractive electron correlation in wide band gap semiconductors by electron-photon interaction

    International Nuclear Information System (INIS)

    Takeda, Hiroyuki; Yoshino, Katsumi

    2004-01-01

    We theoretically demonstrate attractive electron correlation in wide band gap semiconductors by electron-photon interaction. At low temperature, wavevectors of electromagnetic waves absorbed in wide band gap semiconductors cannot be neglected for wavevectors of electron waves; that is, electromagnetic waves affect the movements of electrons. In particular, attractive interaction occurs between two electrons when one electron changes from a valence band to a conduction band and the other electron changes from a conduction band to a valence band

  20. Photoemission from valence bands of transition metal-phthalocyanines

    International Nuclear Information System (INIS)

    Shang, Ming-Hui; Nagaosa, Mayumi; Nagamatsu, Shin-ichi; Hosoumi, Shunsuke; Kera, Satoshi; Fujikawa, Takashi; Ueno, Nobuo

    2011-01-01

    Research highlights: → The HOMO mainly comes from the carbon atoms of Pc rings and the central metal atoms almost have no contribution on the highest occupied molecular orbital (HOMO: a 1u ) distribution of CoPc as well as NiPc. → Influence by central metal atom on the photoemission intensities from the HOMO of two single molecule systems is negligible for the major. → The modification of the distribution for π-orbital upon adsorption as well as the scattering effects of the central metal on the photoemission intensities are negligible for the major. - Abstract: Angular dependencies of ultraviolet photoelectron spectrum of transition metal-phthalocyanines (TM-Pcs), NiPc and CoPc, have been studied by using multiple-scattering theory to explore the electronic structure of the organometallic complexes influenced by central metal atom. The calculated angular distributions of photoelectrons for the highest occupied molecular orbital (HOMO: a 1u ) from the two single systems are nearly the same and represent well the experimental results obtained for the well-ordered monolayer on the highly oriented pyrolytic graphite substrate. The central metal atoms almost have no contribution on the HOMO distribution, which mainly comes from the carbon atoms of Pc ring. Moreover, the modification of the distribution for π orbital upon adsorption as well as the scattering effects of the central metal on the photoemission intensities are negligible for the major.

  1. Molecular invariants: atomic group valence

    International Nuclear Information System (INIS)

    Mundim, K.C.; Giambiagi, M.; Giambiagi, M.S. de.

    1988-01-01

    Molecular invariants may be deduced in a very compact way through Grassman algebra. In this work, a generalized valence is defined for an atomic group; it reduces to the Known expressions for the case of an atom in a molecule. It is the same of the correlations between the fluctions of the atomic charges qc and qd (C belongs to the group and D does not) around their average values. Numerical results agree with chemical expectation. (author) [pt

  2. THE VALENCE OF CORPUSCULAR PROTEINS.

    Science.gov (United States)

    Gorin, M H; Mover, L S

    1942-07-20

    BY THE USE OF TWO EXTREME MODELS: a hydrated sphere and an unhydrated rod the valence (net charge) of corpuscular proteins can be successfully calculated from electric mobility data by the Debye-Hückel theory (modified to include the effect of the ions in the ion atmosphere) in conjunction with the electrophoretic theory of Henry. As pointed out by Abramson, this permits a comparison with values for the valence from titration data. Electrometric titration measurements of serum albumin B (Kekwick) have been determined at several ionic strengths. These results, together with the available data in the literature for serum albumin B, egg albumin, and beta-lactoglobulin have been used to compare values for the valence calculated from measurements of titration, electrophoresis, and membrane potentials. The results indicate that the usual interpretation of titration curves is open to serious question. By extrapolation of the titration data to zero ionic strength and protein concentration, there results an "intrinsic" net charge curve describing the binding of H(+) (OH(-)) ion alone. This curve agrees closely, in each case, with values of the valence calculated from mobility data (which in turn are in close accord with those estimated from membrane potential measurements). The experimental titration curves in the presence of appreciable quantities of ions and protein deviate widely from the ideal curve. It is suggested that, under these conditions, binding of undissociated acid (base) leads to erroneous values for the net charge. This binding would not affect the electrophoretic mobility. Values of the net charge obtained by the two extreme models from electrophoretic data are in agreement within 15 to 20 per cent. The agreement between the cylindrical model and the titration data is somewhat better in each case than with the sphere; i.e., this comparison enables a choice to be made between asymmetry and hydration in the interpretation of results from sedimentation and

  3. Applications of high lateral and energy resolution imaging XPS with a double hemispherical analyser based spectromicroscope

    International Nuclear Information System (INIS)

    Escher, M.; Winkler, K.; Renault, O.; Barrett, N.

    2010-01-01

    The design and applications of an instrument for imaging X-ray photoelectron spectroscopy (XPS) are reviewed. The instrument is based on a photoelectron microscope and a double hemispherical analyser whose symmetric configuration avoids the spherical aberration (α 2 -term) inherent for standard analysers. The analyser allows high transmission imaging without sacrificing the lateral and energy resolution of the instrument. The importance of high transmission, especially for highest resolution imaging XPS with monochromated laboratory X-ray sources, is outlined and the close interrelation of energy resolution, lateral resolution and analyser transmission is illustrated. Chemical imaging applications using a monochromatic laboratory Al Kα-source are shown, with a lateral resolution of 610 nm. Examples of measurements made using synchrotron and laboratory ultra-violet light show the broad field of applications from imaging of core level electrons with chemical shift identification, high resolution threshold photoelectron emission microscopy (PEEM), work function imaging and band structure imaging.

  4. Valence control of cobalt oxide thin films by annealing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shijing [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhang Boping, E-mail: bpzhang@ustb.edu.cn [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China); Zhao Cuihua; Li Songjie; Zhang Meixia; Yan Liping [School of Materials Science and Engineering, University of Science and Technology Beijing, No. 30 Xueyuan Road, Beijing 100083 (China)

    2011-02-01

    The cobalt oxide (CoO and Co{sub 3}O{sub 4}) thin films were successfully prepared using a spin-coating technique by a chemical solution method with CH{sub 3}OCH{sub 2}CH{sub 2}OH and Co(NO{sub 3}){sub 2}.6H{sub 2}O as starting materials. The grayish cobalt oxide films had uniform crystalline grains with less than 50 nm in diameter. The phase structure is able to tailor by controlling the annealing atmosphere and temperature, in which Co{sub 3}O{sub 4} thin film was obtained by annealing in air at 300-600, and N{sub 2} at 300, and transferred to CoO thin film by raising annealing temperature in N{sub 2}. The fitted X-ray photoelectron spectroscopy (XPS) spectra of the Co2p electrons are distinguishable from different valence states of cobalt oxide especially for their satellite structure. The valence control of cobalt oxide thin films by annealing atmosphere contributes to the tailored optical absorption property.

  5. XPS and μ-Raman study of nanosecond-laser processing of poly(dimethylsiloxane) (PDMS)

    Energy Technology Data Exchange (ETDEWEB)

    Armyanov, S., E-mail: armyanov@ipc.bas.bg [Rostislaw Kaischew Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, Sofia 1113 (Bulgaria); Stankova, N.E.; Atanasov, P.A. [Institute of Electronics, Bulgarian Academy of Sciences, 72 Tsarigradsko Shose, Sofia 1784 (Bulgaria); Valova, E.; Kolev, K.; Georgieva, J. [Rostislaw Kaischew Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Block 11, Sofia 1113 (Bulgaria); Steenhaut, O.; Baert, K.; Hubin, A. [Vrije Universiteit Brussels, Faculty of Engineering, Research Group, SURF “Electrochemical and Surface Engineering” (Belgium)

    2015-10-01

    Data about the chemical status of poly(dimethylsiloxane) (PDMS) after nanosecond Q-switched Nd:YAG laser treatment with near infrared, visible and ultraviolet radiation are presented. The μ-Raman spectroscopy analyses reveal as irradiation result a new sharp peak of crystalline silicon. In addition, broad bands appear assigned to D band of amorphous carbon and G band of microcrystalline and polycrystalline graphite. The μ-Raman spectra are variable taken in different inspected points in the trenches formed by laser treatment. The XPS surface survey spectra indicate the constituent elements of PDMS: carbon, oxygen and silicon. The spectra of detail XPS scans illustrate the influence of the laser treatment. The position of Si 2p peaks of the treated samples is close to the value of non-treated except that irradiated by 1064 nm 66 pulses, which is shifted by 0.9 eV. Accordingly, a shift by 0.4 eV is noticed of the O 1s peak, which reflects again a stronger oxidation of silicon. The curve fitting of Si 2p and O 1s peaks after this particular laser treatment shows the degree of conversion of organic to inorganic silicon that takes place during the irradiation.

  6. Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui

    2018-01-01

    The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

  7. Valence configurations in 214Rn

    International Nuclear Information System (INIS)

    Dracoulis, G.D.; Byrne, A.P.; Stuchbery, A.E.; Bark, R.A.; Poletti, A.R.

    1987-01-01

    Excited states of 214 Rn, up to spins of ≅ 24 ℎ have been studied using γ-ray and electron spectroscopy following the 208 Pb( 9 Be,3n) 214 Rn reaction. The level scheme (which differs substantially from earlier work) is compared with the results of a semi-empirical shell model calculation. The availability of high-spin orbitals for the four valence protons and two valence neutrons, and the effect of the attractive proton-neutron interaction, leads to the prediction of high-spin states at an unusually low excitation energy. Experimentally, the high level density leads to difficulties in the level scheme assignments at high spin. Nevertheless, configuration assignments, supported by transition strengths deduced from the measured lifetimes (in the nanosecond region) are suggested for the main yrast states. The decay properties also suggest that configuration mixing is important. The possibility of a gradual transition to octupole deformation, implied by the decay properties of the 11 - and 10 + yrast states is also discussed. (orig.)

  8. Metallic behavior and periodical valence ordering in a MMX chain compound, Pt(2)(EtCS(2))(4)I.

    Science.gov (United States)

    Mitsumi, M; Murase, T; Kishida, H; Yoshinari, T; Ozawa, Y; Toriumi, K; Sonoyama, T; Kitagawa, H; Mitani, T

    2001-11-14

    A new one-dimensional (1-D) halogen-bridged mixed-valence diplatinum(II,III) compound, Pt(2)(EtCS(2))(4)I (3), has been successfully synthesized from [Pt(2)(EtCS(2))(4)] (1) and [Pt(2)(EtCS(2))(4)I(2)] (2). These three compounds have been examined using UV-visible-near-IR, IR, polarized Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and X-ray crystal structure analyses (except for 1). Compound 3 was further characterized through electrical transport measurements, determination of the temperature dependence of lattice parameters, X-ray diffuse scattering, and SQUID magnetometry. 3 crystallizes in the monoclinic space group C2/c and exhibits a crystal structure consisting of neutral 1-D chains with a repeating -Pt-Pt-I- unit lying on the crystallographic 2-fold axis parallel to the b axis. The Pt-Pt distance at 293 K is 2.684 (1) A in the dinuclear unit, while the Pt-I distances are essentially equal (2.982 (1) and 2.978 (1) A). 3 shows relatively high electrical conductivity (5-30 S cm(-1)) at room temperature and undergoes a metal-semiconductor transition at T(M-S) = 205 K. The XPS spectrum in the metallic state reveals a Pt(2+) and Pt(3+) mixed-valence state on the time scale of XPS spectroscopy ( approximately 10(-17) s). In accordance with the metal-semiconductor transition, anomalies are observed in the temperature dependence of the crystal structure, lattice parameters, X-ray diffuse scattering, and polarized Raman spectra near T(M-S). In variable-temperature crystal structure analyses, a sudden and drastic increase in the Pt-I distance near the transition temperature is observed. Furthermore, a steep increase in U(22) of iodine atoms in the 1-D chain direction has been observed. The lattice parameters exhibit significant temperature dependence with drastic change in slope at about 205-240 K. This was especially evident in the unit cell parameter b (1-D chain direction) as it was found to lengthen rapidly with increasing temperature. X

  9. VUV light induced valence degeneration in Sm over-layer on HOPG

    International Nuclear Information System (INIS)

    Kutluk, G; Nakatake, M; Arita, M; Namatame, H; Taniguchi, M; Ishitobi, Y; Sumida, H

    2013-01-01

    Systematic investigation of the influence of vacuum ultraviolet (VUV) irradiation on the valence degeneration in a Sm over-layer on a HOPG substrate was performed using in-situ photoemission spectroscopy (XPS, UPS, and ARPES) for the Sm coverage regime of 0.05-3.6 Å. This investigation confirmed that VUV irradiation-induced degeneration of divalent Sm exerts a more profound effect than Sm contamination during photoemission spectroscopy even under UHV. We found that the charge transfer occurs mainly from divalent Sm to the HOPG surface.

  10. XPS investigations of tribofilms formed on CrN coatings

    Energy Technology Data Exchange (ETDEWEB)

    Mandrino, Djordje, E-mail: djordje.mandrino@imt.si; Podgornik, Bojan

    2017-02-28

    Highlights: • Formation of tribofilms from lubricant additives on CrN surfaces during tribological contact confirmed by XPS. • Chemistry & chemical state of tribofilms obtained by XPS. • Thin sulphate film forms at the top of sulphide tribofilm. • Final type of sulphide in tribolayer depends on additive chemistry and testing temperature. - Abstract: Action of lubrication additives in the case of uncoated steel surfaces, including the type and mechanism of tribofilm formation is well known and understood. However, contact type of tribofilms which might form under the tribological contact between CrN coated surfaces, remains more or less unexplored. The aim of this investigation was to study the type of tribofilms formed on the CrN coated steel samples subjected to lubricated reciprocating sliding contact under different contact conditions Contact surface and tribofilms formed were studied by X-ray Photoelectron Spectroscopy (XPS). Sample surfaces were first imaged by Scanning Electron Microscopy (SEM) to determine areas of tribofilm formation as well as areas not affected by tribological contact. In these areas survey and high resolution (HR) XPS measurements were performed to obtain information about surface chemistry and oxidation states of the constituent elements. It was found that differences between different samples, observed by the XPS measurements, may reflect differences in chemistry of tribofilms formed under different contact conditions.

  11. A study of the valence shell electronic states of s-triazine by photoabsorption spectroscopy and ab initio calculations

    DEFF Research Database (Denmark)

    Holland, D.M.P.; Shaw, D.A.; Stener, Mauro

    2016-01-01

    absorption bands due to excitation from the 1e00 or 6e0 orbitals. The interpretation of the experimental spectrum has been guided by transition energies and oscillator strengths, for Rydberg and valence states, calculated with the time-dependent version of density functional theory and with the coupled...... cluster linear response approach. The theoretical studies indicate that Rydberg/Rydberg and Rydberg/valence mixing is important....

  12. Valence holes observed in nanodiamonds dispersed in water

    Science.gov (United States)

    Petit, Tristan; Pflüger, Mika; Tolksdorf, Daniel; Xiao, Jie; Aziz, Emad F.

    2015-02-01

    Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp2-hybridized carbon disappear, and holes in the valence band are observed.Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp2-hybridized carbon disappear, and holes in the valence band are observed. Electronic supplementary information (ESI) available: Experimental methods, details on XAS/XES normalization and background correction procedures. See DOI: 10.1039/c4nr06639a

  13. Simultaneous conditioning of valence and arousal.

    Science.gov (United States)

    Gawronski, Bertram; Mitchell, Derek G V

    2014-01-01

    Evaluative conditioning (EC) refers to the change in the valence of a conditioned stimulus (CS) due to its pairing with a positive or negative unconditioned stimulus (US). To the extent that core affect can be characterised by the two dimensions of valence and arousal, EC has important implications for the origin of affective responses. However, the distinction between valence and arousal is rarely considered in research on EC or conditioned responses more generally. Measuring the subjective feelings elicited by a CS, the results from two experiments showed that (1) repeated pairings of a CS with a positive or negative US of either high or low arousal led to corresponding changes in both CS valence and CS arousal, (2) changes in CS arousal, but not changes in CS valence, were significantly related to recollective memory for CS-US pairings, (3) subsequent presentations of the CS without the US reduced the conditioned valence of the CS, with conditioned arousal being less susceptible to extinction and (4) EC effects were stronger for high arousal than low arousal USs. The results indicate that the conditioning of affective responses can occur simultaneously along two independent dimensions, supporting evidence in related areas that calls for a consideration of both valence and arousal. Implications for research on EC and the acquisition of emotional dispositions are discussed.

  14. Valence instabilities in cerium intermetallics

    International Nuclear Information System (INIS)

    Dijkman, W.H.

    1982-01-01

    The primary purpose of this investigation was to study the magnetic behaviour of cerium in intermetallic compounds, that show an IV behaviour, e.g. CeSn 3 . In the progress of the investigations, it became of interest to study the effect of changes in the lattice of the IV compound by substituting La or Y for Ce, thus constituting the Cesub(1-x)Lasub(x)Sn 3 and Cesub(1-x)Ysub(x)Sn 3 quasibinary systems. A second purpose was to examine the possibility of introducing instabilities in the valency of a trivalent intermetallic cerium compound: CeIn 3 , also by La and Y-substitutions in the lattice. Measurements on the resulting Cesub(1-x)Lasub(x)In 3 and Cesub(1-x)Ysub(x)In 3 quasibinaries are described. A third purpose was to study the (gradual) transition from a trivalent cerium compound into an IV cerium compound. This was done by examining the magnetic properties of the CeInsub(x)Snsub(3-x) and CePbsub(x)Snsub(3-x) systems. Finally a new possibility was investigated: that of the occurrence of IV behaviour in CeSi 2 , CeSi, and in CeGa 2 . (Auth.)

  15. Characterization of fossil remains using XRF, XPS and XAFS spectroscopies

    International Nuclear Information System (INIS)

    Zougrou, I M; Katsikini, M; Pinakidou, F; Paloura, E C; Brzhezinskaya, M; Papadopoulou, L; Vlachos, E; Tsoukala, E

    2016-01-01

    Synchrotron radiation micro-X-Ray Fluorescence (μ-XRF), X-ray photoelectron (XPS) and X-ray Absorption Fine Structure (XAFS) spectroscopies are applied for the study of paleontological findings. More specifically the costal plate of a gigantic terrestrial turtle Titanochelon bacharidisi and a fossilized coprolite of the cave spotted hyena Crocuta crocuta spelaea are studied. Ca L 2,3 -edge NEXAFS and Ca 2p XPS are applied for the identification and quantification of apatite and Ca containing minerals. XRF mapping and XAFS are employed for the study of the spatial distribution and speciation of the minerals related to the deposition environment. (paper)

  16. Valence evaluation with approaching or withdrawing cues: directly testing valence-arousal conflict theory.

    Science.gov (United States)

    Wang, Yan Mei; Li, Ting; Li, Lin

    2017-07-19

    The valence-arousal conflict theory assumes that both valence and arousal will trigger approaching or withdrawing tendencies. It also predicts that the speed of processing emotional stimuli will depend on whether valence and arousal trigger conflicting or congruent motivational tendencies. However, most previous studies have provided evidence of the interaction between valence and arousal only, and have not provided direct proof of the interactive links between valence, arousal and motivational tendencies. The present study provides direct evidence for the relationship between approach-withdrawal tendencies and the valence-arousal conflict. In an empirical test, participants were instructed to judge the valence of emotional words after visual-spatial cues that appeared to be either approaching or withdrawing from participants. A three-way interaction (valence, arousal, and approach-withdrawal tendency) was observed such that the response time was shorter if participants responded to a negative high-arousal stimulus after a withdrawing cue, or to a positive low-arousal stimulus after an approaching cue. These findings suggest that the approach-withdrawal tendency indeed plays a crucial role in valence-arousal conflict, and that the effect depends on the congruency of valence, arousal and tendency at an early stage of processing.

  17. Ab initio valence calculations in chemistry

    CERN Document Server

    Cook, D B

    1974-01-01

    Ab Initio Valence Calculations in Chemistry describes the theory and practice of ab initio valence calculations in chemistry and applies the ideas to a specific example, linear BeH2. Topics covered include the Schrödinger equation and the orbital approximation to atomic orbitals; molecular orbital and valence bond methods; practical molecular wave functions; and molecular integrals. Open shell systems, molecular symmetry, and localized descriptions of electronic structure are also discussed. This book is comprised of 13 chapters and begins by introducing the reader to the use of the Schrödinge

  18. On triangle meshes with valence dominant vertices

    KAUST Repository

    Morvan, Jean-Marie

    2018-01-01

    We study triangulations $\\cal T$ defined on a closed disc $X$ satisfying the following condition: In the interior of $X$, the valence of all vertices of $\\cal T$ except one of them (the irregular vertex) is $6$. By using a flat singular Riemannian metric adapted to $\\cal T$, we prove a uniqueness theorem when the valence of the irregular vertex is not a multiple of $6$. Moreover, for a given integer $k >1$, we exhibit non isomorphic triangulations on $X$ with the same boundary, and with a unique irregular vertex whose valence is $6k$.

  19. On triangle meshes with valence dominant vertices

    KAUST Repository

    Morvan, Jean-Marie

    2018-02-16

    We study triangulations $\\\\cal T$ defined on a closed disc $X$ satisfying the following condition: In the interior of $X$, the valence of all vertices of $\\\\cal T$ except one of them (the irregular vertex) is $6$. By using a flat singular Riemannian metric adapted to $\\\\cal T$, we prove a uniqueness theorem when the valence of the irregular vertex is not a multiple of $6$. Moreover, for a given integer $k >1$, we exhibit non isomorphic triangulations on $X$ with the same boundary, and with a unique irregular vertex whose valence is $6k$.

  20. Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

    Czech Academy of Sciences Publication Activity Database

    Mašek, Jan; Máca, František; Kudrnovský, Josef; Makarovský, O.; Eaves, L.; Campion, R. P.; Edmonds, K. W.; Rushforth, A.W.; Foxon, C. T.; Gallagher, B. L.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 105, č. 22 (2010), 227202/1-227202/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/07/0456; GA MŠk LC510; GA AV ČR KAN400100652 EU Projects: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100520 Keywords : gallium arsenide * semiconductors Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.621, year: 2010

  1. XPS study of palladium sensitized nano porous silicon thin film

    Indian Academy of Sciences (India)

    Keywords. Porous silicon; passivation; palladium; oxidation; XPS. Abstract. Nano porous silicon (PS) was formed on -type monocrystalline silicon of 2–5 cm resistivity and (100) orientation by electrochemical anodization method using HF and ethanol as the electrolytes. High density of surface states, arising due to its ...

  2. XPS studies of the oxide formed on pure Ti

    International Nuclear Information System (INIS)

    Cremery, P.; David, D.; Beranger, G.; Oviedo, C.; Garcia, E.A.

    1980-01-01

    The XPS technique was used to study titanium samples oxidized at 200 ton of pure oxigen at different times and temperatures with the aim of producing variable oxide thicknesses. The thicknesses of different oxigen layers were determined by the nuclear reaction O 16 (d,p) O 17 *. (author) [pt

  3. Quantitative XPS analysis of thin iron-oxide films

    DEFF Research Database (Denmark)

    Graat, P.C.J.; Somers, Marcel A. J.

    1997-01-01

    Over the last decade Tougaard et al. (see e.g. Ref. 1) provided a formalism to calculate the contribution of inelastically scattered electrons to an XPS or AES spectrum. In that formalism it was assumed that the signal electrons move along straight lines to the surface. Recently, Werner et al. pr...

  4. Valence nucleons in self-consistent fields

    International Nuclear Information System (INIS)

    Di Toro, M.; Lomnitz-Adler, J.

    1978-01-01

    An iterative approach to determine directly the best Hartree-Fock one-body density rho is extended by expressing rho in terms of a core and a valence part and allowing for general crossings of occupied and unoccupied levels in the valence part. Results are shown for 152 Sm and a microscopic analysis of the core structure of deformed light nuclei is carried out. (author)

  5. Theory for the mixed-valence state

    International Nuclear Information System (INIS)

    Varma, C.M.

    1979-01-01

    A theory is presented which explains why mixed-valence compounds behave as two component Fermi liquids, and why TmSe orders magnetically while the other known mixed-valence compounds do not. The variation of Tsub(N) and the field Hsub(T) to obtain ferromagnetic alignment with changing Tm 2+ /Tm 3+ ratio is quantitatively explained. For Tm 2+ concentration > = 0.3, TmSe is predicted to order ferromagnetically

  6. Introduction to x-ray photoelectron spectroscopy (XPS)

    International Nuclear Information System (INIS)

    Liesegang, J.; Pigram, P.J.

    1999-01-01

    Full text: XPS is one of several important surface analytical tools. Developed in Sweden in the 1960s, it was originally named by Kai Siegbahn as Electron Spectroscopy for Chemical Analysis or ESCA; and although it is the best method for non-invasively determining the elemental composition of the first 10 nm of any surface, modern XPS systems are capable of much more than elemental chemical analysis. High resolution photoelectron energy analysis (c. 0.2 eV) now permits easy identification of chemical state as well as concentration; angular variation of detection and depth profiling allow quantitative analysis as a function of depth below a sample surface; energy loss mechanisms may be studied; Auger peaks can be measured in an XPS system; and developments in the area of photoelectron imaging allow high resolution (c. 7 μm) mapping of the distribution of elements and their chemical states to be determined spatially on non-homogeneous surfaces. The workshop sessions will outline the link between the physics and chemistry of surfaces and the process of photoemission. The presentation will illustrate the features and capabilities of a newly acquired Kratos (UK) Axis Ultra XPS and Imaging System recently installed in the Centre for Materials and Surface Science at La Trobe University, and its capabilities regarding the foregoing issues. The first part of the presentation will outline the basics of XPS and the second part will illustrate its usefulness, and in particular, will illustrate the power of the instrumentation through the presentation of several applications of both fundamental and industrial significance. Copyright (1999) Australian X-ray Analytical Association Inc

  7. XPS and angle resolved XPS, in the semiconductor industry: Characterization and metrology control of ultra-thin films

    International Nuclear Information System (INIS)

    Brundle, C.R.; Conti, Giuseppina; Mack, Paul

    2010-01-01

    This review discusses the development of X-ray photoelectron spectroscopy, XPS, used as a characterization and metrology method for ultra-thin films in the semiconductor wafer processing industry. After a brief explanation of how the relative roles of XPS and Auger electron spectroscopy, AES, have changed over the last 15 years or so in the semiconductor industry, we go into some detail as to what is implied by metrology, as opposed to characterization, for thin films in the industry, and then describe how XPS, and particularly angle resolved XPS, ARXPS, have been implemented as a metrology 'tool' for thickness, chemical composition, and non-destructive depth profiling, of transistor gate oxide material, a key requirement in front-end processing. We take a historical approach, dealing first with the early use for SiO 2 films on Si(1 0 0), then moving to silicon oxynitride, SiO x N y in detail, and finally and briefly HfO 2 -based material, which is used today in the most advanced devices (32 nm node).

  8. XPS Spectra Analysis of Ti2+, Ti3+ Ions and Dye Photodegradation Evaluation of Titania-Silica Mixed Oxide Nanoparticles

    Science.gov (United States)

    Chinh, Vu Duc; Broggi, Alessandra; Di Palma, Luca; Scarsella, Marco; Speranza, Giorgio; Vilardi, Giorgio; Thang, Pham Nam

    2018-04-01

    TiO2-SiO2 mixed oxides have been prepared by the sol-gel technique from tetrabutyl orthotitanate and tetraethyl orthosilicate. The prepared materials were characterized by x-ray diffraction, scanning electron microscopy, energy dispersive x-ray spectroscopy, nitrogen physisorption, Fourier-transform infrared spectroscopy (FT-IR) and x-ray photoelectron spectroscopy (XPS). The results indicate that the TiO2-SiO2 mixed oxides have a large surface area and a nanoscale size. FT-IR spectra show that Ti atoms are bonded to silica by oxygen bridging atoms in Ti-O-Si bonds. The titanium valence states in TiO2-SiO2 mixed oxides were investigated by XPS, and their spectra report the presence of Ti2+ and Ti3+ cations for high silica concentration, suggesting the formation of oxygen vacancies. The photocatalytic activity of the prepared materials has been evaluated for the photodegradation of methylene blue (MB). The mixed oxides were activated by means of a UV light source, and the concentration of MB was monitored by UV-Vis spectroscopy. The synthesized TiO2-SiO2 shows significantly higher MB removal efficiency in comparison with that of the commercial TiO2 Degussa, P25.

  9. Band alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface determined by charge corrected X-ray photoelectron spectroscopy

    Science.gov (United States)

    Yan, Baojun; Liu, Shulin; Yang, Yuzhen; Heng, Yuekun

    2016-05-01

    Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn0.8Al0.2O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn0.8Al0.2O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔEV) and conduction band offset (ΔEC) for the interface of the MgO/Zn0.8Al0.2O heterostructure have been constructed. An accurate value of ΔEV = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn0.8Al0.2O, a type-II heterojunction with a ΔEC of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.

  10. [Emotional valence of words in schizophrenia].

    Science.gov (United States)

    Jalenques, I; Enjolras, J; Izaute, M

    2013-06-01

    Emotion recognition is a domain in which deficits have been reported in schizophrenia. A number of emotion classification studies have indicated that emotion processing deficits in schizophrenia are more pronounced for negative affects. Given the difficulty of developing material suitable for the study of these emotional deficits, it would be interesting to examine whether patients suffering from schizophrenia are responsive to positively and negatively charged emotion-related words that could be used within the context of remediation strategies. The emotional perception of words was examined in a clinical experiment involving schizophrenia patients. This emotional perception was expressed by the patients in terms of the valence associated with the words. In the present study, we investigated whether schizophrenia patients would assign the same negative and positive valences to words as healthy individuals. Twenty volunteer, clinically stable, outpatients from the Psychiatric Service of the University Hospital of Clermont-Ferrand were recruited. Diagnoses were based on DSM-IV criteria. Global psychiatric symptoms were assessed using the Positive and Negative Symptoms Scale (PANSS). The patients had to evaluate the emotional valence of a set of 300 words on a 5-point scale ranging from "very unpleasant" to "very pleasant". . The collected results were compared with those obtained by Bonin et al. (2003) [13] from 97 University students. Correlational analyses of the two studies revealed that the emotional valences were highly correlated, i.e. the schizophrenia patients estimated very similar emotional valences. More precisely, it was possible to examine three separate sets of 100 words each (positive words, neutral words and negative words). The positive words that were evaluated were the more positive words from the norms collected by Bonin et al. (2003) [13], and the negative words were the more negative examples taken from these norms. The neutral words

  11. Surface studies on uranium monocarbide using XPS and SIMS

    International Nuclear Information System (INIS)

    Asuvathraman, R.

    1995-01-01

    The air-exposed surfaces of sintered and arc-melted UC samples were examined by XPS and SIMS. XPS results indicate that the surface is covered with a very thin layer of UO 2 mixed with free carbon, which would have formed along with the oxide during the reaction between UC and oxygen or moisture. From the SIMS depth profile of oxygen, the thickness of the oxide layer is found to be approximately 10 nm. The SIMS oxygen images of the surface as a function of etching time reveal that the surface of UC consists of a top layer of adsorbed moisture/oxygen; this contamination layer is followed by a layer containing uranium oxide, uranium hydroxide and free carbon and then grain boundary oxide and finally bulk UC. The behaviour of sintered and arc-melted samples is similar. ((orig.))

  12. XPS studies of nitrogen doping niobium used for accelerator applications

    Science.gov (United States)

    Yang, Ziqin; Lu, Xiangyang; Tan, Weiwei; Zhao, Jifei; Yang, Deyu; Yang, Yujia; He, Yuan; Zhou, Kui

    2018-05-01

    Nitrogen doping study on niobium (Nb) samples used for the fabrication of superconducting radio frequency (SRF) cavities was carried out. The samples' surface treatment was attempted to replicate that of the Nb SRF cavities, which includes heavy electropolishing (EP), nitrogen doping and the subsequent EP with different amounts of material removal. The surface chemical composition of Nb samples with different post treatments has been studied by XPS. The chemical composition of Nb, O, C and N was presented before and after Gas Cluster Ion Beam (GCIB) etching. No signals of poorly superconducting nitrides NbNx was found on the surface of any doped Nb sample with the 2/6 recipe before GCIB etching. However, in the depth range greater than 30 nm, the content of N element is below the XPS detection precision scope even for the Nb sample directly after nitrogen doping treatment with the 2/6 recipe.

  13. Band structure of superlattice with δ-like potential

    International Nuclear Information System (INIS)

    Gashimzade, N.F.; Gashimzade, F.M.; Hajiev, A.T.

    1993-08-01

    Band structure of superlattice with δ-like potential has been calculated taking into account interaction of carriers of different kinds. Superlattices of semiconductors with degenerated valence band and zero-gap semiconductors have been considered. For the latter semimetal-semiconductor transition has been obtained. (author). 8 refs, 1 fig

  14. XPS quantification of the hetero-junction interface energy

    International Nuclear Information System (INIS)

    Ma, Z.S.; Wang Yan; Huang, Y.L.; Zhou, Z.F.; Zhou, Y.C.; Zheng Weitao; Sun, Chang Q.

    2013-01-01

    Highlights: ► Quantum entrapment or polarization dictates the performance of dopant, impurity, interface, alloy and compounds. ► Interface bond energy, energy density, and atomic cohesive energy can be determined using XPS and our BOLS theory. ► Presents a new and reliable method for catalyst design and identification. ► Entrapment makes CuPd to be a p-type catalyst and polarization derives AgPd as an n-type catalyst. - Abstract: We present an approach for quantifying the heterogeneous interface bond energy using X-ray photoelectron spectroscopy (XPS). Firstly, from analyzing the XPS core-level shift of the elemental surfaces we obtained the energy levels of an isolated atom and their bulk shifts of the constituent elements for reference; then we measured the energy shifts of the specific energy levels upon interface alloy formation. Subtracting the referential spectrum from that collected from the alloy, we can distil the interface effect on the binding energy. Calibrated based on the energy levels and their bulk shifts derived from elemental surfaces, we can derive the bond energy, energy density, atomic cohesive energy, and free energy at the interface region. This approach has enabled us to clarify the dominance of quantum entrapment at CuPd interface and the dominance of polarization at AgPd and BeW interfaces, as the origin of interface energy change. Developed approach not only enhances the power of XPS but also enables the quantification of the interface energy at the atomic scale that has been an issue of long challenge.

  15. Emotions and false memories: valence or arousal?

    Science.gov (United States)

    Corson, Yves; Verrier, Nadège

    2007-03-01

    The effects of mood on false memories have not been studied systematically until recently. Some results seem to indicate that negative mood may reduce false recall and thus suggest an influence of emotional valence on false memory. The present research tested the effects of both valence and arousal on recall and recognition and indicates that the effect is actually due to arousal. In fact, whether participants' mood is positive, negative, or neutral, false memories are significantly more frequent under conditions of high arousal than under conditions of low arousal.

  16. Valence electronic properties of porphyrin derivatives.

    Science.gov (United States)

    Stenuit, G; Castellarin-Cudia, C; Plekan, O; Feyer, V; Prince, K C; Goldoni, A; Umari, P

    2010-09-28

    We present a combined experimental and theoretical investigation of the valence electronic structure of porphyrin-derived molecules. The valence photoemission spectra of the free-base tetraphenylporphyrin and of the octaethylporphyrin molecule were measured using synchrotron radiation and compared with theoretical spectra calculated using the GW method and the density-functional method within the generalized gradient approximation. Only the GW results could reproduce the experimental data. We found that the contribution to the orbital energies due to electronic correlations has the same linear behavior in both molecules, with larger deviations in the vicinity of the HOMO level. This shows the importance of adequate treatment of electronic correlations in these organic systems.

  17. Characterisation of Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3} ceramics by SEM, XRD, XPS and dielectric permittivity tests

    Energy Technology Data Exchange (ETDEWEB)

    Molak, A. [Institute of Physics, University of Silesia, Ul. Uniwersytecka 4, PL-40-007 Katowice (Poland)]. E-mail: molak@us.edu.pl; Talik, E. [Institute of Physics, University of Silesia, Ul. Uniwersytecka 4, PL-40-007 Katowice (Poland); Kruczek, M. [Institute of Physics, University of Silesia, Ul. Uniwersytecka 4, PL-40-007 Katowice (Poland); Paluch, M. [Institute of Physics, University of Silesia, Ul. Uniwersytecka 4, PL-40-007 Katowice (Poland); Ratuszna, A. [Institute of Physics, University of Silesia, Ul. Uniwersytecka 4, PL-40-007 Katowice (Poland); Ujma, Z. [Institute of Physics, University of Silesia, Ul. Uniwersytecka 4, PL-40-007 Katowice (Poland)

    2006-03-15

    The Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3} ceramics has been obtained from oxides by sintering in air, using a two-stage process with precursor columbite-like (Mn{sub 0.5}Nb)O{sub 3} phase. The PbO oxide was added in the second stage. Analysis of the X-ray diffraction pattern shows that the ceramics consist of 91% of major perovskite phase. A monoclinic distortion of the perovskite structure was found. The cell parameters are a = 12.193(3) A, b = 11.966(6) A, c 12.144(2) A, {beta} = 90{sup o}10.7'. The microanalysis made with SEM exhibited fluctuation in chemical composition of the perovskite phase. Precipitation of MnO{sub 2}, PbO and the Pb-Mn-Nb-O phase different from perovskite was found. The X-ray photoelectron spectroscopy was used to study the electronic structure of the Pb(Mn{sub 1/3}Nb{sub 2/3})O{sub 3} ceramics. The core levels of lead, manganese, niobium and oxygen were measured. The shape of valence band ridge is influenced by Mn 3d states. The real average chemical composition obtained from the XPS measurement is Pb{sub 0.99}(Mn{sub 0.42}Nb{sub 0.67})O{sub 2.92}. Broadband dielectric measurement was carried out in 10{sup -2} to 10{sup 6} Hz and within 80-700 K ranges. The dominant relaxation process exhibits characteristic times typical for ionic processes {tau} {sub 0,H} = 1 x 10{sup -11} s for the higher temperature range and, {tau} {sub 0,L} = 1 x 10{sup -9} s for lower temperatures. The activation energy of relaxation process, E {sub M,H} = 0.43 eV and E {sub M,L} = 0.34 eV corresponds to activation energy of electric conductivity. The dielectric relaxation is ascribed to dipoles created by oxygen vacancies and/or Mn-V {sub O} complexes.

  18. Breakdown of rotational symmetry at semiconductor interfaces; a microscopic description of valence subband mixing

    International Nuclear Information System (INIS)

    Cortez, S.; Krebs, O.; Voisin, P.

    2000-01-01

    The recently discovered in-plane optical anisotropy of [001]-grown quantum wells offers a new theoretical and experimental insight into the electronic properties of semiconductor interfaces. We first discuss the coupling of X and Y valence bands due to the breakdown of rotation inversion symmetry at a semiconductor hetero-interface, with special attention to its dependence on effective parameters such as valence band offset. The intracell localization of Bloch functions is explained from simple theoretical arguments and evaluated numerically from a pseudo-potential microscopic model. The role of envelope functions is considered, and we discuss the specific case of non-common atom interfaces. Experimental results and applications to interface characterization are presented. These calculations give a microscopic justification, and establish the limits of the heuristic 'H BF ' model. (author)

  19. SORCE XPS Level 3 Solar Spectral Irradiance 6-Hour Means V010

    Data.gov (United States)

    National Aeronautics and Space Administration — The SORCE XUV Photometer System (XPS) Solar Spectral Irradiance (SSI) 6-Hour Data Product SOR3XPS6 contains solar XUV irradiances in the 0.1 to 27 nm range, as well...

  20. Photoionization cross-sections of ground and excited valence levels of actinides

    Directory of Open Access Journals (Sweden)

    Yarzhemsky Victor G.

    2012-01-01

    Full Text Available The photoionization cross-sections of ground and excited atomic states of actinide atoms were calculated by the Dirac-Fock-Slater method for two excitation energies of X-ray radiation (1253.6 eV and 1486.6 eV. These data are required for calculations of intensities of X-ray photoelectron spectra of actinide compound valence bands and interpretation of experimental spectra.

  1. Band alignment of atomic layer deposited MgO/Zn{sub 0.8}Al{sub 0.2}O heterointerface determined by charge corrected X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Baojun, E-mail: yanbj@ihep.ac.cn [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Liu, Shulin [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Yang, Yuzhen [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Department of Physics, Nanjing University, Nanjing P. O. Box 210093 (China); Heng, Yuekun [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China)

    2016-05-15

    Highlights: • Band alignment of MgO/Zn{sub 0.8}Al{sub 0.2}O heterojunction were investigated systematically using charge corrected X-ray photoelectron spectroscopy. • Differential charging phenomenon is observed in determination VBOs of insulator/semiconductor heterojunction. • Valence and conduction band offsets have been determined to be 0.72 ± 0.11 eV and 3.26 ± 0.11 eV, respectively, with a type-II band line-up. - Abstract: Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn{sub 0.8}Al{sub 0.2}O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn{sub 0.8}Al{sub 0.2}O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn{sub 0.8}Al{sub 0.2}O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔE{sub V}) and conduction band offset (ΔE{sub C}) for the interface of the MgO/Zn{sub 0.8}Al{sub 0.2}O heterostructure have been constructed. An accurate value of ΔE{sub V} = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn{sub 0.8}Al{sub 0.2}O, a type-II heterojunction with a ΔE{sub C} of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.

  2. Double-valence-fluctuating molecules and superconductivity

    International Nuclear Information System (INIS)

    Hirsch, J.E.; Scalapino, D.J.

    1985-01-01

    We discuss the possibility of ''double-valence-fluctuating'' molecules, having two ground-state configurations differing by two electrons. We propose a possible realization of such a molecule, and experimental ways to look for it. We argue that a weakly coupled array of such molecules should give rise to a strong-coupling Shafroth-Blatt-Butler superconductor, with a high transition temperature

  3. NEVER forget: negative emotional valence enhances recapitulation.

    Science.gov (United States)

    Bowen, Holly J; Kark, Sarah M; Kensinger, Elizabeth A

    2017-07-10

    A hallmark feature of episodic memory is that of "mental time travel," whereby an individual feels they have returned to a prior moment in time. Cognitive and behavioral neuroscience methods have revealed a neurobiological counterpart: Successful retrieval often is associated with reactivation of a prior brain state. We review the emerging literature on memory reactivation and recapitulation, and we describe evidence for the effects of emotion on these processes. Based on this review, we propose a new model: Negative Emotional Valence Enhances Recapitulation (NEVER). This model diverges from existing models of emotional memory in three key ways. First, it underscores the effects of emotion during retrieval. Second, it stresses the importance of sensory processing to emotional memory. Third, it emphasizes how emotional valence - whether an event is negative or positive - affects the way that information is remembered. The model specifically proposes that, as compared to positive events, negative events both trigger increased encoding of sensory detail and elicit a closer resemblance between the sensory encoding signature and the sensory retrieval signature. The model also proposes that negative valence enhances the reactivation and storage of sensory details over offline periods, leading to a greater divergence between the sensory recapitulation of negative and positive memories over time. Importantly, the model proposes that these valence-based differences occur even when events are equated for arousal, thus rendering an exclusively arousal-based theory of emotional memory insufficient. We conclude by discussing implications of the model and suggesting directions for future research to test the tenets of the model.

  4. Interface termination and band alignment of epitaxially grown alumina films on Cu-Al alloy

    Science.gov (United States)

    Yoshitake, Michiko; Song, Weijie; Libra, Jiří; Mašek, Karel; Šutara, František; Matolín, Vladimír; Prince, Kevin C.

    2008-02-01

    Epitaxial ultrathin alumina films were grown on a Cu-9 at. % Al(111) substrate by selective oxidation of Al in the alloy in ultrahigh vacuum. The photoelectron spectra of Al 2p and valence band were measured in situ during oxidation. By analyzing multiple peaks of Al 2p, the interface atomic structure was discussed. The energy difference between the Fermi level of the substrate and the valence band maximum of alumina (band offset) was obtained. The relation between the interface atomic structure and the band offset was compared with the reported first-principles calculations. A novel method for controlling the band offset was proposed.

  5. Charge compensation and binding energy referencing in XPS analysis

    International Nuclear Information System (INIS)

    Metson, J.B.

    1999-01-01

    Full text: The past decade has seen a number of significant advances in the capabilities of commercial X-ray Photoelectron spectrometers. Of note have been the near universal adoption of monochromatised X-ray sources, very useful advances in spatial resolution, particularly in spectroscopy, and radical developments in sample handling and automation. However one of the most significant advances has been the development of several relatively new concepts in charge compensation. Throughout the evolution of XPS, the ability to compensate for surface charging and accurately determine binding energies, particularly with electrically inhomogenous samples, has remained one of the most intractable problems. Beginning perhaps with the Kratos, 'in the lens' electrostatic mirror/electron source coupled with a magnetic snorkel lens, a number of concepts have been advanced which take a quite different conceptual approach to charge compensation. They differ in a number of quite fundamental ways to the electron flood type compensators widely used and absolutely essential with instruments based on monochromatised sources. The concept of the local return of secondary electrons to their point of emission, largely negates the problems associated with differential charging across different regions of the surface, and suggests the possibility of overcoming one of the central limitations of XPS, that is the inability to compare absolute binding energies of species in different electrical as well as chemical environments. The general status of charge compensation and the use of internal binding energy references in XPS will be reviewed, along with some practical examples of where these techniques work, and where there is clearly still room for further development. Copyright (1999) Australian X-ray Analytical Association Inc

  6. Applications Performance on NAS Intel Paragon XP/S - 15#

    Science.gov (United States)

    Saini, Subhash; Simon, Horst D.; Copper, D. M. (Technical Monitor)

    1994-01-01

    The Numerical Aerodynamic Simulation (NAS) Systems Division received an Intel Touchstone Sigma prototype model Paragon XP/S- 15 in February, 1993. The i860 XP microprocessor with an integrated floating point unit and operating in dual -instruction mode gives peak performance of 75 million floating point operations (NIFLOPS) per second for 64 bit floating point arithmetic. It is used in the Paragon XP/S-15 which has been installed at NAS, NASA Ames Research Center. The NAS Paragon has 208 nodes and its peak performance is 15.6 GFLOPS. Here, we will report on early experience using the Paragon XP/S- 15. We have tested its performance using both kernels and applications of interest to NAS. We have measured the performance of BLAS 1, 2 and 3 both assembly-coded and Fortran coded on NAS Paragon XP/S- 15. Furthermore, we have investigated the performance of a single node one-dimensional FFT, a distributed two-dimensional FFT and a distributed three-dimensional FFT Finally, we measured the performance of NAS Parallel Benchmarks (NPB) on the Paragon and compare it with the performance obtained on other highly parallel machines, such as CM-5, CRAY T3D, IBM SP I, etc. In particular, we investigated the following issues, which can strongly affect the performance of the Paragon: a. Impact of the operating system: Intel currently uses as a default an operating system OSF/1 AD from the Open Software Foundation. The paging of Open Software Foundation (OSF) server at 22 MB to make more memory available for the application degrades the performance. We found that when the limit of 26 NIB per node out of 32 MB available is reached, the application is paged out of main memory using virtual memory. When the application starts paging, the performance is considerably reduced. We found that dynamic memory allocation can help applications performance under certain circumstances. b. Impact of data cache on the i860/XP: We measured the performance of the BLAS both assembly coded and Fortran

  7. XANES and XPS studies of the reduction of ammonium paramolybdate

    International Nuclear Information System (INIS)

    Halada, G.P.; Clayton, C.R.

    1991-01-01

    in situ glancing-angle x-ray reflectivity experiments were performed on electrochemical reduction products formed in a dilute paramolybdate solution on a platinum electrode. These data were compared with x-ray photoelectron spectra which showed formation of simple molybdate, pentavalent and tetravalent species at increasingly negative potentials. X-ray absorption data demonstrated changes in edge position, pre-edge structure and edge height corresponding to reduction and subsequent growth of the reduction product film at a number of the potentials examined with XPS

  8. Reducing the negative valence of stressful memories through emotionally valenced, modality-specific tasks

    NARCIS (Netherlands)

    Tadmor, Avia; McNally, Richard J; Engelhard, Iris M

    2016-01-01

    BACKGROUND AND OBJECTIVES: People who perform a cognitively demanding secondary task while recalling a distressing memory often experience the memory as less emotional, vivid, or accurate during subsequent recollections. In this experiment, we tested whether the emotional valence (positive versus

  9. Raman and XPS characterization of vanadium oxide thin films with temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ureña-Begara, Ferran, E-mail: ferran.urena@uclouvain.be [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium); Crunteanu, Aurelian [XLIM Research Institute, UMR 7252, CNRS/Université de Limoges, Limoges (France); Raskin, Jean-Pierre [Université catholique de Louvain, Institute of Information and Communication Technologies, Electronics and Applied Mathematics (ICTEAM), Louvain-la-Neuve (Belgium)

    2017-05-01

    Highlights: • Comprehensive study of the oxidation of VO{sub 2} thin films from R.T. up to 550 °C. • Phase changes and mixed-valence vanadium oxides formed during the oxidation process. • Reported Raman and XPS signatures for each vanadium oxide. • Monitoring of the current and resistance evolution at the surface of the films. • Oxidation model describing the evolution of the vanadium oxides and phase changes. - Abstract: The oxidation mechanisms and the numerous phase transitions undergone by VO{sub 2} thin films deposited on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates when heated from room temperature (R.T.) up to 550 °C in air are investigated by Raman and X-ray photoelectron spectroscopy. The results show that the films undergo several intermediate phase transitions between the initial VO{sub 2} monoclinic phase at R.T. and the final V{sub 2}O{sub 5} phase at 550 °C. The information about these intermediate phase transitions is scarce and their identification is important since they are often found during the synthesis of vanadium dioxide films. Significant changes in the film conductivity have also been observed to occur associated to the phase transitions. In this work, current and resistance measurements performed on the surface of the films are implemented in parallel with the Raman measurements to correlate the different phases with the conductivity of the films. A model to explain the oxidation mechanisms and phenomena occurring during the oxidation of the films is proposed. Peak frequencies, full-width half-maxima, binding energies and oxidation states from the Raman and X-ray photoelectron spectroscopy experiments are reported and analyzed for all the phases encountered in VO{sub 2} films prepared on SiO{sub 2}/Si and Al{sub 2}O{sub 3} substrates.

  10. Reformulated tight binding calculation for band discontinuity at CdTe/Hg xCd1-xTe heterointerfaces and their type I-type III transitions

    International Nuclear Information System (INIS)

    Ekpunobi, A.J.

    2005-01-01

    A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/Hg x Cd 1-x Te interface in the s 2 p 2 configuration. The calculated valence band discontinuity of 0.31 eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point

  11. Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

    Science.gov (United States)

    Pandiyan, Rajesh; Oulad Elhmaidi, Zakaria; Sekkat, Zouheir; Abd-lefdil, Mohammed; El Khakani, My Ali

    2017-02-01

    We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu2ZnSnS4 (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (Ta), but their crystallinity is much improved for Ta ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with Ta (from ∼14 nm at RT to 70 nm at Ta = 500 °C with a value around 40 nm for Ta = 300-400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV-vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at Ta = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS spectroscopies to determine their chemical bondings, the position of their valence band maximum (relative to Fermi level), and their work function values. This enabled us to sketch out, as accurately as possible, the band alignment of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials.

  12. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao [School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China)

    2017-10-15

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm{sup 2} V{sup -1} s{sup -1}, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE{sub V}) and conduction band offsets (ΔE{sub C}) were determined as 0.09 and 0.83 eV, respectively. The ΔE{sub C} was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE{sub C}, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

    International Nuclear Information System (INIS)

    Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao

    2017-01-01

    In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm"2 V"-"1 s"-"1, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE_V) and conduction band offsets (ΔE_C) were determined as 0.09 and 0.83 eV, respectively. The ΔE_C was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE_C, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Band alignment measurements at heterojunction interfaces in layered thin film solar cells & thermoelectrics

    Science.gov (United States)

    Fang, Fang

    2011-12-01

    Public awareness of the increasing energy crisis and the related serious environmental concerns has led to a significantly growing demand for alternative clean and renewable energy resources. Thin film are widely applied in multiple renewable energy devices owing to the reduced amount of raw materials and increase flexibility of choosing from low-cost candidates, which translates directly into reduced capital cost. This is a key driving force to make renewable technology competitive in the energy market. This thesis is focused on the measurement of energy level alignments at interfaces of thin film structures for renewable energy applications. There are two primary foci: II -VI semiconductor ZnSe/ZnTe thin film solar cells and Bi2Te3/Sb2Te3 thin film structures for thermoelectric applications. In both cases, the electronic structure and energy band alignment at interfaces usually controls the carrier transport behavior and determines the quality of the device. High-resolution photoemission spectroscopy (lab-based XPS & synchrotron-based UPS) was used to investigate the chemical and electronic properties of epitaxial Bi2Te3 and Sb2Te3 thin films, in order to validate the anticipated band alignment at interfaces in Bi 2Te3/Sb2Te3 superlattices as one favoring electron-transmission. A simple, thorough two-step treatment of a chemical etching in dilute hydrochloric acid solution and a subsequent annealing at ˜150°C under ultra-high vacuum environment is established to remove the surface oxides completely. It is an essential step to ensure the measurements on electronic states are acquired on stoichimetric, oxide-free clean surface of Bi 2Te3 and Sb2Te3 films. The direct measurement of valence band offsets (VBO) at a real Sb 2Te3/Bi2Te3 interface is designed based on the Kraut model; a special stacking film structure is prepared intentionally: sufficiently thin Sb2Te3 film on top of Bi2Te 3 that photoelectrons from both of them are collected simultaneously. From a

  15. Physical aspects of relaxation and shake-up effects in XPS and core →2π* absorption spectra of CO chemisorbed on Ni (111)

    International Nuclear Information System (INIS)

    Gumhalter, B.

    1985-07-01

    The physical origin of the peculiar relaxation shifts and spectral shapes appearing in x-ray induced core-to-valence excitation and core level photoemission spectra of CO chemisorbed on Ni(111) are discussed and interpreted within a unique framework. Within the model presented the electronic transitions in core-to-valence excitation spectroscopy and XPS are shown to give rise to drastic electronic rearrangements within the adsorption system and to the charge shake-up in the CO 2π* derived resonance partly filled via the backdonation mechanism. Such singular relaxation processes, common to both spectroscopies, are closely related and can be treated on the same footing. This makes possible to establish unique relaxation shifts and spectral characteristics for two seemingly different experimental situations. The use of this formalism in analysing the experimental data enables one to estimate and distinguish between the extra-adsorbate (image or nonbonding) and intra-adsorbate (chemically induced) screening of the core holes created either by x-ray induced core-to-valence electronic transitions or core level photoionization in CO/Ni(111). (author)

  16. XPS Studies of LSCF Interfaces after Cell Testing

    Directory of Open Access Journals (Sweden)

    Gianfranco DiGiuseppe

    2018-01-01

    Full Text Available The motivation of this investigation is to explore the possibility of using the depth profile capability of XPS to study interfaces after SOFC button cell testing. The literature uses XPS to study various cathode materials but has devoted little to the understanding of various cathode interfaces especially after testing. In this work, an SOFC button cell is first tested, and then, the LSCF cathode, barrier layer, and electrolyte are sputtered away to study the behavior of different interfaces. This work has shown that some elements have moved into other layers of the SOFC cell. It is argued that the migration of the elements is partly due to a redeposition mechanism after atoms are sputtered away, while the rest is due to interdiffusion between the SDC and YSZ layers. However, additional work is needed to better understand the mechanism by which atoms move around at different interfaces. The cell electrochemical performance is also discussed in some details but is not the focus.

  17. Quantitative XPS analysis of high Tc superconductor surfaces

    International Nuclear Information System (INIS)

    Jablonski, A.; Sanada, N.; Suzuki, Y.; Fukuda, Y.; Nagoshi, M.

    1993-01-01

    The procedure of quantitative XPS analysis involving the relative sensitivity factors is most convenient to apply to high T c superconductor surfaces because this procedure does not require standards. However, a considerable limitation of such an approach is its relatively low accuracy. In the present work, a proposition is made to use for this purpose a modification of the relative sensitivity factor approach accounting for the matrix and the instrumental effects. The accuracy of this modification when applied to the binary metal alloys is 2% or better. A quantitative XPS analysis was made for surfaces of the compounds Bi 2 Sr 2 CuO 6 , Bi 2 Sr 2 CaCu 2 O 8 , and YBa 2 Cu 3 O Y . The surface composition determined for the polycrystalline samples corresponds reasonably well to the bulk stoichiometry. Slight deficiency of oxygen was found for the Bi-based compounds. The surface exposed on cleavage of the Bi 2 Sr 2 CaCu 2 O 8 single crystal was found to be enriched with bismuth, which indicates that the cleavage occurs along the BiO planes. This result is in agreement with the STM studies published in the literature

  18. Speciation of uranium after microbial action by XANES and XPS

    International Nuclear Information System (INIS)

    Dodge, C.J.; Francis, A.J.; Lu, F.; Halada, G.P.; Kagwade, S.V.; Clayton, C.R.

    1993-01-01

    The speciation of radionuclides and toxic metals in wastes subjected to microbial action is important in determining the extent of stabilization in a disposal environment. As part of an ongoing study, we investigated the reduction of uranium by a Clostridium sp. using X-ray absorption neat edge spectroscopy (XANES) at the National Synchrotron Light Source (NSLS) and X-ray photoelectron spectroscopy (XPS). XPS analysis of uranyl acetate containing hexavalent uranium exhibited a binding energy of 382.0eV at the U 4f 7/2 peak. The sample incubated in the presence of bacteria was shifted to lower binding energy (380.6eV), confirming the reduction of U 6+ to U 4+ at the bacterial surface. XANES analysis, using an electron yield detector, was performed at the M v absorption edge (3d-->5f). The absorption peak energy of the sample exhibited a shift from 3551.1eV to 3550.1eV which is higher than uranium metal (3549.6eV ) but lower than U 4+ (3550.4eV). This indicates the presence of U 3+ which is probably located beneath the surface within the biomass. Anaerobic bacterial treatment of wastes containing uranyl ion can result in the stabilization of uranium

  19. XPS investigation of copper corrosion in hydro-carbonate electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Sieber, I.; Hildebrand, H.; Schmuki, P. [University Erlangen-Nuremberg, Martensstr.7, D-91058 Erlangen (Germany); Kaluzhina, S.A. [Voronezh State University, University Sq.1, 394006 Voronezh (Russian Federation)

    2004-07-01

    Problems of corrosion and effective methods of metal protection are still actual in the present days. Special interest is in copper material, which as basic component of heat exchanger constructions can corrode in contact with carbonate water. The intensity of the corrosion destruction depends on the carbon water concentration and thermal conditions in the system. The present paper provides new insights into the role of the HCO{sub 3}{sup -} - ions in the corrosion process of copper. Copper samples after anodic oxidation in 0.02 and 0.1 M NaHCO{sub 3} have been studied using XPS and SEM. The presence of carbonate compounds in the passive film in 0.1 M NaHCO{sub 3} was established by XPS analysis all over the surface. These compounds are responsible for the protective character of the passive film towards local destruction. In the 0.02 M NaHCO{sub 3} electrolyte carbonate compounds were not found at places of pit formation after multi-cycling of the sample. (authors)

  20. Valence-Dependent Belief Updating: Computational Validation

    Directory of Open Access Journals (Sweden)

    Bojana Kuzmanovic

    2017-06-01

    Full Text Available People tend to update beliefs about their future outcomes in a valence-dependent way: they are likely to incorporate good news and to neglect bad news. However, belief formation is a complex process which depends not only on motivational factors such as the desire for favorable conclusions, but also on multiple cognitive variables such as prior beliefs, knowledge about personal vulnerabilities and resources, and the size of the probabilities and estimation errors. Thus, we applied computational modeling in order to test for valence-induced biases in updating while formally controlling for relevant cognitive factors. We compared biased and unbiased Bayesian models of belief updating, and specified alternative models based on reinforcement learning. The experiment consisted of 80 trials with 80 different adverse future life events. In each trial, participants estimated the base rate of one of these events and estimated their own risk of experiencing the event before and after being confronted with the actual base rate. Belief updates corresponded to the difference between the two self-risk estimates. Valence-dependent updating was assessed by comparing trials with good news (better-than-expected base rates with trials with bad news (worse-than-expected base rates. After receiving bad relative to good news, participants' updates were smaller and deviated more strongly from rational Bayesian predictions, indicating a valence-induced bias. Model comparison revealed that the biased (i.e., optimistic Bayesian model of belief updating better accounted for data than the unbiased (i.e., rational Bayesian model, confirming that the valence of the new information influenced the amount of updating. Moreover, alternative computational modeling based on reinforcement learning demonstrated higher learning rates for good than for bad news, as well as a moderating role of personal knowledge. Finally, in this specific experimental context, the approach based on

  1. Actinides, the narrowwest bands

    International Nuclear Information System (INIS)

    Smith, J.L.; Riseborough, P.S.

    1984-01-01

    A table of elements is shown that demonstrates the crossover from superconductivity to magnetism as well as regions of mixed valence. In particular, the actinides must eventually show 4f-electron like mixed valence, after the 5f-electrons become localized. There also seems to be an adiabatic continuation between heavy fermion and mixed valence behavior

  2. Initial surface film on magnesium metal: A characterization by X-ray photoelectron spectroscopy (XPS) and photocurrent spectroscopy (PCS)

    International Nuclear Information System (INIS)

    Santamaria, M.; Di Quarto, F.; Zanna, S.; Marcus, P.

    2007-01-01

    A detailed investigation of the initial film grown on mechanically polished Mg electrodes has been carried out by ex situ X-ray Photoelectron Spectroscopy (XPS) and in situ Photocurrent Spectroscopy (PCS), allowing to reach a detailed picture of the passive layer structure. The XPS data show that the films formed soon after mechanical treatment and immersion in aqueous electrolyte have a bilayer structure, consisting of an ultra-thin MgO inner layer (∼2.5 nm) and a Mg(OH) 2 external layer. The thickness of the Mg(OH) 2 layer is a function of immersion time and solution temperature. After mechanical treatment and immersion in aqueous solution at room temperature, the MgO/Mg(OH) 2 layer in some area of electrodes is so thin to allow an electron photoemission process from the Mg Fermi level to the electrolyte conduction band. Only internal photoemission processes are evidenced for Mg electrodes aged in NaOH at 80 deg. C, due the formation of a thicker Mg(OH) 2 layer. From anodic photocurrent spectra an optical band gap of ∼4.25 eV has been estimated for Mg(OH) 2 , lower with respect to the optical gap of the corresponding anhydrous counterpart

  3. Evaluative conditioning induces changes in sound valence

    Directory of Open Access Journals (Sweden)

    Anna C. Bolders

    2012-04-01

    Full Text Available Evaluative Conditioning (EC has hardly been tested in the auditory domain, but it is a potentially valuable research tool. In Experiment 1 we investigated whether the affective evaluation of short environmental sounds can be changed using affective words as unconditioned stimuli (US. Congruence effects on an affective priming task (APT for conditioned sounds demonstrated successful EC. Subjective ratings for sounds paired with negative words changed accordingly. In Experiment 2 we investigated whether the acquired valence remains stable after repeated presentation of the conditioned sound without the US or whether extinction occurs. The acquired affective value remained present, albeit weaker, even after 40 extinction trials. These results warrant the use of EC to study processing of short environmental sounds with acquired valence, even if this requires repeated stimulus presentations. This paves the way for studying processing of affective environmental sounds while effectively controlling low level-stimulus properties.

  4. Human Amygdala Represents the Complete Spectrum of Subjective Valence

    Science.gov (United States)

    Jin, Jingwen; Zelano, Christina; Gottfried, Jay A.

    2015-01-01

    Although the amygdala is a major locus for hedonic processing, how it encodes valence information is poorly understood. Given the hedonic potency of odor stimuli and the amygdala's anatomical proximity to the peripheral olfactory system, we combined high-resolution fMRI with pattern-based multivariate techniques to examine how valence information is encoded in the amygdala. Ten human subjects underwent fMRI scanning while smelling 9 odorants that systematically varied in perceived valence. Representational similarity analyses showed that amygdala codes the entire dimension of valence, ranging from pleasantness to unpleasantness. This unidimensional representation significantly correlated with self-reported valence ratings but not with intensity ratings. Furthermore, within-trial valence representations evolved over time, prioritizing earlier differentiation of unpleasant stimuli. Together, these findings underscore the idea that both spatial and temporal features uniquely encode pleasant and unpleasant odor valence in the amygdala. The availability of a unidimensional valence code in the amygdala, distributed in both space and time, would create greater flexibility in determining the pleasantness or unpleasantness of stimuli, providing a mechanism by which expectation, context, attention, and learning could influence affective boundaries for guiding behavior. SIGNIFICANCE STATEMENT Our findings elucidate the mechanisms of affective processing in the amygdala by demonstrating that this brain region represents the entire valence dimension from pleasant to unpleasant. An important implication of this unidimensional valence code is that pleasant and unpleasant valence cannot coexist in the amygdale because overlap of fMRI ensemble patterns for these two valence extremes obscures their unique content. This functional architecture, whereby subjective valence maps onto a pattern continuum between pleasant and unpleasant poles, offers a robust mechanism by which context

  5. 5th International Conference on Valence Fluctuations

    CERN Document Server

    Malik, S

    1987-01-01

    During the Koln meeting (August 28-31, 1984), Irdia was chosen as the venue for the next International Conference on Valence Fluctuations. lhis was in recognition ard appreciation of the work done, both experimental ard theoretical, by the Irdian scientists in this area during the last decade. We decided to hold this Conference in the month of January, 1987 at Bangalore. lhe subject of Valence Fluctuations has kept itself alive ard active as it has provided many shocks ard suprises particularly among the Ce- ard U-based intermetallies. lhe richness of many interesting physical phenomena occurring in mixed valent materials, the flexibility of modifying their physical properties (by alloying, for example) ard the possibility of synthesizing a wide variety of new such materials seem to be the key factors in this regard. Barely six months before this Conference, an International Conference on Anomalous Rare Earths and Actinides (ICAREA) had been held at Grenoble (July, 1986) which also focussed on mixed valence a...

  6. Valence fluctuations between two magnetic configurations

    International Nuclear Information System (INIS)

    Mazzaferro, J.O.

    1982-01-01

    The subject of this work is the study of a microscopic model which describes TmSe through its most important feature, i.e.: the valence fluctuations between two magnetic configurations. Chapter I is a general review of the most important physical properties of rare-earth systems with intermediate valence (I.V.) and a general description of experimental results and theoretical models on Tm compounds. In Chapter II the Hamiltonian model is discussed and the loss of rotational invariance is also analyzed. Chapter III is devoted to the study of non-stoichiometric Tsub(x)Se compounds. It is shown that these compounds can be considered as a mixture of TmSe (I.V. system) and Tm 3+ 0.87Se. Chapter IV is devoted to the calculation of spin-and charge susceptibilities. The results obtained permit to explain the essential features of the neutron scattering spectrum in TmSe. In Chapter V, an exactly solvable periodic Hamiltonian is presented. From the experimental results, some fundamental features are deduced to describe TmSe as an intermediate valence system whose two accessible ionic configurations are magnetic (degenerated fundamental state). (M.E.L) [es

  7. XPS study of the Ln 5p,4f-electronic states of lanthanides in Ln2O3

    International Nuclear Information System (INIS)

    Teterin, Yu.A.; Teterin, A.Yu.; Utkin, I.O.; Ryzhkov, M.V.

    2004-01-01

    The present work analyses the fine structure of the low binding energy (E b , 0-50 eV) X-ray photoelectron spectra XPS of lanthanide (La through Lu excepted for Pm) oxides, and compares it with the non-relativistic X α -discrete variation calculation results for the clusters reflecting the close environment of lanthanides in oxides. The obtained results show that the Ln 4f n -electrons of lanthanides in oxides by their spectral parameters have much in common with the M 3d-electrons in oxides of the 3d-transition metals. According to these data, the Ln 4f shell of lanthanides is rather outer and can participate in the formation of molecular orbitals in compounds. The XPS data at least do not contradict the theoretical suggestion about the significant participation of the Ln 4f-electrons in formation of the molecular orbitals in the studied materials. The spectra in the Ln 5p-O 2s binding energy region of the studied lanthanide oxides were found to exhibit the complicated structure instead of separated peaks due to the electrons of the Ln 5p 3/2,5/2 and O 2s atomic shells. Taking into account the energy differences between the inner (Ln 3d) and outer (Ln 5p) electronic shells for some metallic lanthanides and their oxides, the Ln 5p atomic shells were shown to participate in the formation of the inner valence molecular orbitals (IVMO). That agrees qualitatively with the calculation results

  8. Characterization of carbonated serpentine using XPS and TEM

    International Nuclear Information System (INIS)

    Schulze, Roland K.; Hill, Mary Ann; Field, Robert D.; Papin, Pallas A.; Hanrahan, Robert J.; Byler, Darrin D.

    2004-01-01

    With the increasing concentration volume of carbon dioxide in the atmosphere, there has been an increasing interest in carbon dioxide sequestration. One method is to store the carbon dioxide in mineral form, reacting solution dissolved CO 2 to precipitate carbonates. In order to understand whether or not such an endeavor is feasible, the carbonation reaction must first be understood. In this study, the surface of ground serpentine, untreated, heat treated and following a carbonation experiment, has been characterized using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The results indicate that the mechanism for the reaction involves dissolution of the serpentine through the formation of an amorphous phase and subsequent precipitation of magnesite. The rate limiting step appears to be the diffusion of Mg out of the amorphous phase

  9. Surface Propensity of Atmospherically Relevant Amino Acids Studied by XPS.

    Science.gov (United States)

    Mocellin, Alexandra; Gomes, Anderson Herbert de Abreu; Araújo, Oscar Cardoso; de Brito, Arnaldo Naves; Björneholm, Olle

    2017-04-27

    Amino acids constitute an important fraction of the water-soluble organic nitrogen (WSON) compounds in aerosols and are involved in many processes in the atmosphere. In this work, we applied X-ray photoelectron spectroscopy (XPS) to study aqueous solutions of four amino acids, glycine, alanine, valine, and methionine, in their zwitterionic forms. We found that amino acids with hydrophilic side chains and smaller size, GLY and ALA, tend to stay in the bulk of the liquid, while the hydrophobic and bigger amino acids, VAL and MET, are found to concentrate more on the surface. We found experimental evidence that the amino acids have preferential orientation relative to the surface, with the hydrophobic side chain being closer to the surface than the hydrophilic carboxylate group. The observed amino acid surface propensity has implications in atmospheric science as the surface interactions play a central role in cloud droplet formation, and they should be considered in climate models.

  10. Silicon (100)/SiO2 by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Jensen, David S.; Kanyal, Supriya S.; Madaan, Nitesh; Vail, Michael A.; Dadson, Andrew; Engelhard, Mark H.; Linford, Matthew R.

    2013-09-25

    Silicon (100) wafers are ubiquitous in microfabrication and, accordingly, their surface characteristics are important. Herein, we report the analysis of Si (100) via X-ray photoelectron spectroscopy (XPS) using monochromatic Al K radiation. Survey scans show that the material is primarily silicon and oxygen, and the Si 2p region shows two peaks that correspond to elemental silicon and silicon dioxide. Using these peaks the thickness of the native oxide (SiO2) was estimated using the equation of Strohmeier.1 The oxygen peak is symmetric. The material shows small amounts of carbon, fluorine, and nitrogen contamination. These silicon wafers are used as the base material for subsequent growth of templated carbon nanotubes.

  11. XPS analysis of aluminosilicate microspheres bioactivity tested in vitro

    Energy Technology Data Exchange (ETDEWEB)

    Todea, M.; Vanea, E. [Faculty of Physics and Institute of Interdisciplinary Research on Bio-Nano-Sciences, Babes Bolyai University, Cluj-Napoca 400084 (Romania); Bran, S. [University of Medicine and Pharmacy “Iuliu Haţieganu”, Department of Cranio-Maxillofacial Surgery, 400029 Cluj-Napoca (Romania); Berce, P. [Technical University of Cluj-Napoca, Faculty of Machine Building and National Centre of Rapid Prototyping, 400641 Cluj-Napoca (Romania); Simon, S., E-mail: simons@phys.ubbcluj.ro [Faculty of Physics and Institute of Interdisciplinary Research on Bio-Nano-Sciences, Babes Bolyai University, Cluj-Napoca 400084 (Romania)

    2013-04-01

    The study aims to characterize surface properties of aluminosilicate microspheres incorporating yttrium, with potential biomedical applications. Micrometric particles of spherical shape were obtained by spray drying method. The behavior of aluminosilicate microspheres without yttrium and with yttrium was investigated under in vitro conditions, by seven days incubation in simulated body fluid (SBF). The surface elemental composition and the atomic environments on outermost layer of the microspheres, prior to and after incubation in SBF were evaluated by X-ray photoelectron spectroscopy (XPS) in order to investigate their bioactivity. The results were analyzed to underline the effect of yttrium addition on surface properties of the aluminosilicate microspheres and implicitly on the behavior of the samples in simulated body environments.

  12. Secondary electron measurement and XPS characterization of NEG coatings

    International Nuclear Information System (INIS)

    Sharma, R. K.; Sinha, Atul K.; Gupta, Nidhi; Nuwad, J.; Jagannath,; Gadkari, S. C.; Singh, M. R.; Gupta, S. K.

    2014-01-01

    Ternary alloy coatings of IVB and VB materials provide many of benefits over traditional material surfaces such as creation of extreme high vacuum(XHV), lower secondary electron yield(SEY), low photon desorption coefficient. XHV (pressure −10 mbar) is very useful to the study of surfaces of the material in as it is form, high energy particle accelerators(LHC, Photon Factories), synchrotrons (ESRF, Ellectra) etc.. Low secondary electron yield leads to very low multi-pacting utilizes to increase beam life time. In this paper preparation of the coatings and a study of secondary electron yield measurement after heating at different temperatures has been shown also results of their surface characterization based on shift in binding energy has been produced using the surface techniques XPS. Stoichiometry of the film was measured by Energy dispersive x-ray analysis (EDX)

  13. Electronic structure investigation of MoS2 and MoSe2 using angle-resolved photoemission spectroscopy and ab initio band structure studies.

    Science.gov (United States)

    Mahatha, S K; Patel, K D; Menon, Krishnakumar S R

    2012-11-28

    Angle-resolved photoemission spectroscopy (ARPES) and ab initio band structure calculations have been used to study the detailed valence band structure of molybdenite, MoS(2) and MoSe(2). The experimental band structure obtained from ARPES has been found to be in good agreement with the theoretical calculations performed using the linear augmented plane wave (LAPW) method. In going from MoS(2) to MoSe(2), the dispersion of the valence bands decreases along both k(parallel) and k(perpendicular), revealing the increased two-dimensional character which is attributed to the increasing interlayer distance or c/a ratio in these compounds. The width of the valence band and the band gap are also found to decrease, whereas the valence band maxima shift towards the higher binding energy from MoS(2) to MoSe(2).

  14. Band structure and visible light photocatalytic activity of multi-type nitrogen doped TiO(2) nanoparticles prepared by thermal decomposition.

    Science.gov (United States)

    Dong, Fan; Zhao, Weirong; Wu, Zhongbiao; Guo, Sen

    2009-03-15

    Multi-type nitrogen doped TiO(2) nanoparticles were prepared by thermal decomposition of the mixture of titanium hydroxide and urea at 400 degrees C for 2h. The as-prepared photocatalysts were characterized by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectra (UV-vis DRS), and photoluminescence (PL). The results showed that the as-prepared samples exhibited strong visible light absorption due to multi-type nitrogen doped in the form of substitutional (N-Ti-O and Ti-O-N) and interstitial (pi* character NO) states, which were 0.14 and 0.73 eV above the top of the valence band, respectively. A physical model of band structure was established to clarify the visible light photocatalytic process over the as-prepared samples. The photocatalytic activity was evaluated for the photodegradation of gaseous toluene under visible light irradiation. The activity of the sample prepared from wet titanium hydroxide and urea (TiO(2)-Nw, apparent reaction rate constant k = 0.045 min(-1)) was much higher than other samples including P25 (k = 0.0013 min(-1)). The high activity can be attributed to the results of the synergetic effects of strong visible light absorption, good crystallization, large surface hydroxyl groups, and enhanced separation of photoinduced carriers.

  15. Electronic Structure and Band Alignment at the NiO and SrTiO 3 p–n Heterojunctions

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Kelvin H. L. [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Wu, Rui [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Tang, Fengzai [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Li, Weiwei [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Oropeza, Freddy E. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.; Qiao, Liang [School of Materials, The University of Manchester, Manchester M13 9PL, U.K.; Lazarov, Vlado K. [Department of Physics, University of York, Heslington, York YO10 5DD, U.K.; Du, Yingge [Physical Sciences Division, Physical & amp, Computational; Payne, David J. [Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, U.K.; MacManus-Driscoll, Judith L. [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.; Blamire, Mark G. [Department of Materials Science & amp, Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, U.K.

    2017-07-25

    Understanding the energetics at the interface including the alignment of valence and conduction bands, built-in potentials, and ionic and electronic reconstructions, is an important challenge in designing oxide interfaces that have controllable multi-functionalities for novel (opto-)electronic devices. In this work, we report detailed investigations on the hetero-interface of wide bandgap p-type NiO and n-type SrTiO3 (STO). We show that despite a large lattice mismatch (~7%) and dissimilar crystal structure, high-quality NiO and Li doped NiO (LNO) thin films can be epitaxially grown on STO(001) substrates through a domain matching epitaxy (DME) mechanism. X-ray photoelectron spectroscopy (XPS) studies indicate that NiO/STO heterojunctions form a type II “staggered” band alignment. In addition, a large built-in potential of up to 0.97 eV was observed at the interface of LNO and Nb doped STO (NbSTO). The LNO/NbSTO p-n heterojunctions exhibit a large rectification ratio of 2×103, but also a large ideality factor of 4.3. The NiO/STO p-n heterojunctions have important implication for applications in photocatalysis and photodetector as the interface provides favourable energetics for facile separation and transport of photogenerated electrons and holes.

  16. Valency and type conversion in CuInSe2 with H2 plasma exposure: A photoemission investigation

    International Nuclear Information System (INIS)

    Nelson, A.J.; Frigo, S.P.; Rosenberg, R.

    1993-01-01

    The effect of H 2 plasma exposure on CuInSe 2 was studied by synchrotron radiation soft-x-ray photoemission spectroscopy. The low-power H 2 plasma was generated with a commercial electron cyclotron resonance plasma source using pure H 2 with the plasma exposure being performed at 200 degree C. In situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the In 4d and Se 3d core lines. The results were correlated in order to relate changes in surface chemistry to the electronic structure. These measurements indicate that the H 2 plasma exposure type converts the CuInSe 2 surface to an n-type surface as well as converting the In +3 valency state to an In +1 valency state

  17. Valence skipping driven superconductivity and charge Kondo effect

    International Nuclear Information System (INIS)

    Yanagisawa, Takashi; Hase, Izumi

    2013-01-01

    Highlights: •Valence skipping in metallic compounds can give rise to an unconventional superconductivity. •Several elements in the periodic table show valence skipping (or valence missing), for example, Bi forms the compounds in valence states +3 and +5. •The doping of valence skipping elements will induce superconductivity and this will lead to a possibility of high temperature superconductivity. •We consider the Wolf model with negative-U impurities, and show a phase diagram including superconducting phase. •There is a high temperature region near the boundary. -- Abstract: Valence skipping in metallic compounds can give rise to an unconventional superconductivity. Several elements in the periodic table show valence skipping (or valence missing), for example, Bi forms the compounds in valence states +3 and +5. The doping of valence skipping elements will induce superconductivity and this will lead to a possibility of high temperature superconductivity. We consider the Wolf model with negative-U impurities, and show a phase diagram including superconducting phase. The superconducting state is changed into a metallic state with a local singlet as the attractive interaction |U| increases. There is a high temperature region near the boundary

  18. Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime

    International Nuclear Information System (INIS)

    Ghosh, Bahniman; Mondal, Partha; Akram, M. W.; Bal, Punyasloka; Salimath, Akshay Kumar

    2014-01-01

    We propose a hetero-gate-dielectric double gate junctionless transistor (HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects of band-to-band tunnelling (BTBT) in the sub-threshold region. A junctionless transistor (JLT) is turned off by the depletion of carriers in the highly doped thin channel (device layer) which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the channel. These effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor (n–p–n BJT for channel JLT) in the lateral direction by the source (emitter), channel (base) and drain (collector) regions in JLT structure in off-state. The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability. (semiconductor devices)

  19. Topological Qubits from Valence Bond Solids

    Science.gov (United States)

    Wang, Dong-Sheng; Affleck, Ian; Raussendorf, Robert

    2018-05-01

    Topological qubits based on S U (N )-symmetric valence-bond solid models are constructed. A logical topological qubit is the ground subspace with twofold degeneracy, which is due to the spontaneous breaking of a global parity symmetry. A logical Z rotation by an angle 2 π /N , for any integer N >2 , is provided by a global twist operation, which is of a topological nature and protected by the energy gap. A general concatenation scheme with standard quantum error-correction codes is also proposed, which can lead to better codes. Generic error-correction properties of symmetry-protected topological order are also demonstrated.

  20. Thermal recombination: Beyond the valence quark approximation

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, B. [Department of Physics, Duke University, Durham, NC 27708 (United States); Fries, R.J. [School of Physics and Astronomy, University of Minnesota, Minneapolis, MN 55455 (United States)]. E-mail: fries@physics.umn.edu; Bass, S.A. [Department of Physics, Duke University, Durham, NC 27708 (United States); RIKEN BNL Research Center, Brookhaven National Laboratory, Upton, NY 11973 (United States)

    2005-07-07

    Quark counting rules derived from recombination models agree well with data on hadron production at intermediate transverse momenta in relativistic heavy-ion collisions. They convey a simple picture of hadrons consisting only of valence quarks. We discuss the inclusion of higher Fock states that add sea quarks and gluons to the hadron structure. We show that, when recombination occurs from a thermal medium, hadron spectra remain unaffected by the inclusion of higher Fock states. However, the quark number scaling for elliptic flow is somewhat affected. We discuss the implications for our understanding of data from the Relativistic Heavy Ion Collider.

  1. Valence electron momentum distributions in cadmium

    International Nuclear Information System (INIS)

    Frost, L.; Weigold, E.; Mitroy, J.

    1982-08-01

    The valence 5s and 4d electron momentum distributions in cadmium have been measured using noncoplanar symmetric (e, 2e) electron coincidence spectroscopy at a total energy of 1200eV. They are in close agreement with Hartree-Fock momentum distributions both in shape and relative magnitudes. Some satellite lines of very low intensity have been detected. A CI calculation of the Cd ground state and several Cd + ion states has been carried out to predict cross reactions for the ground state and various satellite transitions. The predictions are in agreement with the data

  2. Reply to Isgur's comments on valence QCD

    International Nuclear Information System (INIS)

    Liu, K.F.

    2000-01-01

    With the goal of understanding the complexity of QCD and the role of symmetry in dynamics, the authors studied a field theory called Valence QCD (VQCD) in which the Z graphs are forbidden so that the Fock space is limited to the valence quarks. The authors calculated nucleon form factors, matrix elements, and hadron masses both with this theory and with quenched QCD on a set of lattices with the same gauge background. Comparing the results of the lattice calculations in these two theories, the authors drew conclusions regarding the SU(6) valence quark model and chiral symmetry. While recognizing the goal of VQCD, Nathan Isgur disagrees on some of the conclusions the authors have drawn. The foremost objection raised in section 2 is to their suggestion that the major part of the hyperfine splittings in baryons is due to Goldstone boson exchange and not one-gluon-exchange (OGE) interactions. The logic of Isgur's objection is that VQCD yields a spectroscopy vastly different from quenched QCD and therefore the structure of the hadrons (to which hyperfine splittings in a quark model are intimately tied) is also suspect so no definite conclusions are possible. To put this into perspective it should be emphasized at the outset that spectroscopy is only one aspect of hadron physics examined in section 1. The authors have studied the axial and scalar couplings of nucleon in terms of F A /D A and F S /D S , the neutron to proton magnetic moment ratio μn/μp, and various form factors. None of these results reveal any pathologies of hadron structure and turn out to be close to the SU(6) relations, as expected. In fact this is what motivated the study of valence degrees of freedom via VQCD. In section 2 the authors address specific issues related to spectroscopy in VQCD. Isgur also presented more general arguments against the idea of boson exchange as a contributor to hyperfine effects. A cornerstone of his discussion is the unifying aspect of OGE in a quark model picture. The

  3. Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Miyokawa, Norihiko; Sekiya, Takumi; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

    2016-09-01

    We fabricated amorphous oxide semiconductor films, a-(Ga{sub 1–x}Zn{sub x})O{sub y}, at room temperature on glass, which have widely tunable band gaps (E{sub g}) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm{sup 2} V{sup −1} s{sup −1} was obtained for E{sub g} = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E{sub g} with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region. - Highlights: • Incorporation of H/H{sub 2}O stabilizes the amorphous phase. • Ultrawide band gap (~ 3.8 eV) amorphous oxide semiconductor was fabricated. • The increase in band gap comes mostly from the deepening of the valence band maximum level. • Donor level is more likely aligned to the valence band maximum level.

  4. Band alignment of type I at (100ZnTe/PbSe interface

    Directory of Open Access Journals (Sweden)

    Igor Konovalov

    2016-06-01

    Full Text Available A junction of lattice-matched cubic semiconductors ZnTe and PbSe results in a band alignment of type I so that the narrow band gap of PbSe is completely within the wider band gap of ZnTe. The valence band offset of 0.27 eV was found, representing a minor barrier during injection of holes from PbSe into ZnTe. Simple linear extrapolation of the valence band edge results in a smaller calculated band offset, but a more elaborate square root approximation was used instead, which accounts for parabolic bands. PbSe was electrodeposited at room temperature with and without Cd2+ ions in the electrolyte. Although Cd adsorbs at the surface, the presence of Cd in the electrolyte does not influence the band offset.

  5. Strongly correlated impurity band superconductivity in diamond: X-ray spectroscopic evidence

    Directory of Open Access Journals (Sweden)

    G. Baskaran

    2006-01-01

    Full Text Available In a recent X-ray absorption study in boron doped diamond, Nakamura et al. have seen a well isolated narrow boron impurity band in non-superconducting samples and an additional narrow band at the chemical potential in a superconducting sample. We interpret the beautiful spectra as evidence for upper Hubbard band of a Mott insulating impurity band and an additional metallic 'mid-gap band' of a conducting 'self-doped' Mott insulator. This supports the basic framework of a recent theory of the present author of strongly correlated impurity band superconductivity (impurity band resonating valence bond, IBRVB theory in a template of a wide-gap insulator, with no direct involvement of valence band states.

  6. Computational Design of Flat-Band Material

    Science.gov (United States)

    Hase, I.; Yanagisawa, T.; Kawashima, K.

    2018-02-01

    Quantum mechanics states that hopping integral between local orbitals makes the energy band dispersive. However, in some special cases, there are bands with no dispersion due to quantum interference. These bands are called as flat band. Many models having flat band have been proposed, and many interesting physical properties are predicted. However, no real compound having flat band has been found yet despite the 25 years of vigorous researches. We have found that some pyrochlore oxides have quasi-flat band just below the Fermi level by first principles calculation. Moreover, their valence bands are well described by a tight-binding model of pyrochlore lattice with isotropic nearest neighbor hopping integral. This model belongs to a class of Mielke model, whose ground state is known to be ferromagnetic with appropriate carrier doping and on-site repulsive Coulomb interaction. We have also performed a spin-polarized band calculation for the hole-doped system from first principles and found that the ground state is ferromagnetic for some doping region. Interestingly, these compounds do not include magnetic element, such as transition metal and rare-earth elements.

  7. Studies of irradiated zircaloy fuel sheathing using XPS

    International Nuclear Information System (INIS)

    Chan, P.K.; Irving, K.G.; Hocking, W.H.; Duclos, A.M.; Gerwing, A.F.

    1995-01-01

    The preliminary results reported here support the hypothesis that CANLUB graphite coating reduces the rate at which oxygen can react with fuel sheathing. X-ray photoelectron spectroscopic (XPS) characterization of Zircaloy sheathing obtained from extended-burnup Bruce-type elements (BDL-406-XY (555 MW.h/kgU) and BDL-406-AAH (731 MW.h/kgU)) irradiated in NRU indicates that CANLUB may reduce fuel sheath oxidation, and hence that fission-liberated oxygen may remain in the fuel. Chemical shifts in the Zr 3d spectra suggest that a stoichiometric (ZrO 2 ) oxide film was formed only on Zircaloy in direct contact with fuel. Particulate fuel adhering to the sheath was also determined to be systematically more oxidized on surfaces with CANLUB than on those without it. The unique association of tin on sheathing specimens with the non-CANLUB-coated specimens might also suggest that the tin had segregated from the sheathing. It must be emphasized that further experiments are required to better define the effect of CANLUB on fuel oxidation. (author). 14 refs., 1 tab., 3 figs

  8. The assessment of metal surface cleanliness by XPS

    CERN Document Server

    Scheuerlein, C

    2006-01-01

    The most commonly used quantity to characterize surface cleanliness through X-ray photoemission spectroscopy (XPS) measurements is the so-called relative atomic surface concentration of carbon (at.% C). We have investigated the relationship between at.% C values and the C 1s peak area on Cu and we find a nearly linear behaviour in the range 15–80 at.% C. Correction factors for the measured at.% C values that enable a comparison of the cleanliness level of different materials, notably Cu, Al and stainless steel, have been determined experimentally. The influence of the storage time and method on the degree of re-contamination of initially clean Cu has been examined. The carbon contamination on clean metallic Cu increases abruptly to some 20 at.% C upon air exposure and continues to increase with storage time in air. Storage in polymer bags can lead to up to 70 at.% C after 1 month, whereas storage in aluminium foil can preserve an acceptable surface cleanliness for a similar storage time.

  9. Studies of irradiated zircaloy fuel sheathing using XPS

    Energy Technology Data Exchange (ETDEWEB)

    Chan, P K; Irving, K G [Atomic Energy of Canada Ltd., Chalk River, ON (Canada); Hocking, W H; Duclos, A M; Gerwing, A F [Atomic Energy of Canada Ltd., Pinawa, MB (Canada). Whiteshell Labs.

    1996-12-31

    The preliminary results reported here support the hypothesis that CANLUB graphite coating reduces the rate at which oxygen can react with fuel sheathing. X-ray photoelectron spectroscopic (XPS) characterization of Zircaloy sheathing obtained from extended-burnup Bruce-type elements (BDL-406-XY (555 MW.h/kgU) and BDL-406-AAH (731 MW.h/kgU)) irradiated in NRU indicates that CANLUB may reduce fuel sheath oxidation, and hence that fission-liberated oxygen may remain in the fuel. Chemical shifts in the Zr 3d spectra suggest that a stoichiometric (ZrO{sub 2}) oxide film was formed only on Zircaloy in direct contact with fuel. Particulate fuel adhering to the sheath was also determined to be systematically more oxidized on surfaces with CANLUB than on those without it. The unique association of tin on sheathing specimens with the non-CANLUB-coated specimens might also suggest that the tin had segregated from the sheathing. It must be emphasized that further experiments are required to better define the effect of CANLUB on fuel oxidation. (author). 14 refs., 1 tab., 3 figs.

  10. Effects of XPS operational parameters on investigated sample surfaces

    International Nuclear Information System (INIS)

    Mrad, O.; Ismail, I.

    2013-04-01

    In this work, we studied the effects of the operating conditions of the xray photoelectron spectroscopy analysis technique (XPS) on the investigated samples. Firstly, the performances of the whole system have been verified as well as the accuracy of the analysis. Afterwards, the problem of the analysis of insulating samples caused by the charge buildup on the surface has been studied. The use of low-energy electron beam (<100 eV) to compensate the surface charge has been applied. The effect of X-ray on the samples have been assessed and was found to be nondestructive within the analysis time. The effect of low- and high-energy electron beams on the sample surface have been investigated. Highenergy electrons were found to have destructive effect on organic samples. The sample heating procedure has been tested and its effect on the chemical stat of the surface was followed. Finally, the ion source was used to determine the elements distribution and the chemical stat of different depths of the sample. A method has been proposed to determine these depths (author).

  11. Sub-nanometer resolution XPS depth profiling: Sensing of atoms

    Energy Technology Data Exchange (ETDEWEB)

    Szklarczyk, Marek, E-mail: szklarcz@chem.uw.edu.pl [Faculty of Chemistry, University of Warsaw, ul. Pasteura 1, 02-093 Warsaw (Poland); Shim-Pol, ul. Lubomirskiego 5, 05-080 Izabelin (Poland); Macak, Karol; Roberts, Adam J. [Kratos Analytical Ltd, Wharfside, Trafford Wharf Road, Manchester, M17 1GP (United Kingdom); Takahashi, Kazuhiro [Kratos XPS Section, Shimadzu Corp., 380-1 Horiyamashita, Hadano, Kanagawa 259-1304 (Japan); Hutton, Simon [Kratos Analytical Ltd, Wharfside, Trafford Wharf Road, Manchester, M17 1GP (United Kingdom); Głaszczka, Rafał [Shim-Pol, ul. Lubomirskiego 5, 05-080 Izabelin (Poland); Blomfield, Christopher [Kratos Analytical Ltd, Wharfside, Trafford Wharf Road, Manchester, M17 1GP (United Kingdom)

    2017-07-31

    Highlights: • Angle resolved photoelectron depth profiling of nano thin films. • Sensing atomic position in SAM films. • Detection of direction position of adsorbed molecules. - Abstract: The development of a method capable of distinguishing a single atom in a single molecule is important in many fields. The results reported herein demonstrate sub-nanometer resolution for angularly resolved X-ray photoelectron spectroscopy (ARXPS). This is made possible by the incorporation of a Maximum Entropy Method (MEM) model, which utilize density corrected electronic emission factors to the X-ray photoelectron spectroscopy (XPS) experimental results. In this paper we report on the comparison between experimental ARXPS results and reconstructed for both inorganic and organic thin film samples. Unexpected deviations between experimental data and calculated points are explained by the inaccuracy of the constants and standards used for the calculation, e.g. emission factors, scattering intensity and atomic density through the studied thickness. The positions of iron, nitrogen and fluorine atoms were determined in the molecules of the studied self-assembled monolayers. It has been shown that reconstruction of real spectroscopic data with 0.2 nm resolution is possible.

  12. An XPS study on ruthenium compounds and catalysts

    International Nuclear Information System (INIS)

    Bianchi, C.L.; Ragaini, V.; Cattania, M.G.

    1991-01-01

    The binding energy (BE) of the relevant peaks of several ruthenium compounds have been measured with a monochromatic small spot XPS. The BE of the 3d 5/2 level of ruthenium is in the range 279.91-282.88 eV. The variation of BE is due either to the variation of the oxidation state or to the different counter-ion. A series of catalysts with varying amounts of ruthenium supported on alumina and prepared using different precursors was also analyzed. The presence of more ruthenium species other than the metal was observed. On the basis of the values previously obtained on unsupported compounds, the species with higher BE were assigned to oxides. On all the samples prepared from RuCl 3 , an additional peak at a very high BE (283.79 eV) has been observed. This peak is related to the presence of chlorine on the surface: it is suggested that it is related to a charge transfer interaction. The influence of this species on the CO reactivity in the Fischer-Tropsch reaction is discussed. (orig.)

  13. Electronic band structure of lithium, sodium and potassium fluorides

    International Nuclear Information System (INIS)

    Jouanin, C.; Albert, J.P.; Gout, C.

    1975-01-01

    A mixed tight-binding, pseudopotential method is proposed to calculate the energy band structure of large-gap crystals and is tested here on LiF, NaF and KF. Three-centre terms are included in the determination of the valence bands by the tight-binding method and for the conduction bands we use a pseudopotential model proposed by Bassani and Giuliano, modified for the positive ions. By taking into account the polarization corrections, transitions calculated from the energy band structures are compared with experimental data and the agreement is generally good

  14. Reformulated tight binding calculation for band discontinuity at CdTe/Hg {sub x}Cd{sub 1-x}Te heterointerfaces and their type I-type III transitions

    Energy Technology Data Exchange (ETDEWEB)

    Ekpunobi, A.J. [Department of Physics and Industrial Physics, Nnamdi Azikiwe University, P.M.B. 5025, Awka, Anambra State (Nigeria)

    2005-02-25

    A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/Hg {sub x}Cd{sub 1-x}Te interface in the s{sup 2}p{sup 2} configuration. The calculated valence band discontinuity of 0.31 eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point.

  15. Valence photoelectron spectrum of KBr: Effects of electron correlation

    International Nuclear Information System (INIS)

    Calo, A.; Huttula, M.; Patanen, M.; Aksela, H.; Aksela, S.

    2008-01-01

    The valence photoelectron spectrum has been measured for molecular KBr. Experimental energies of the main and satellite structures have been compared with the results of ab initio calculations based on molecular orbital theory including configuration and multiconfiguration interaction approaches. Comparison between the experimental KBr spectrum and previously reported Kr valence photoelectron spectrum has also been performed in order to find out if electron correlation is of the same importance in the valence ionized state of KBr as in the corresponding state of Kr

  16. The equivalent width as a figure of merit for XPS narrow scans

    International Nuclear Information System (INIS)

    Singh, Bhupinder; Velázquez, Daniel; Terry, Jeff; Linford, Matthew R.

    2014-01-01

    Highlights: • We introduce a new figure of merit for XPS narrow scans: the equivalent width (EW XPS ). • EW XPS is less subjective and involves lesser user bias than traditional peak fitting. • EW XPS is responsive to changes in chemical states of materials. • EW XPS could be used for quality control and comparing spectra from similar samples. • EW XPS has the potential to be part of an expert software system for machine interpretation of spectra. - Abstract: X-ray Photoelectron Spectroscopy (XPS) is a widely used surface analytical tool that provides information about the near surface regions of materials. And while indispensable for XPS data analysis, peak fitting of narrow scans is often a fairly subjective exercise. Herein we introduce the equivalent width (EW) as an additional and less subjective figure of merit for XPS narrow scans. We believe that this parameter will prove particularly useful for analyzing series of similar or nominally identical spectra, perhaps as a component of an expert software system for the machine interpretation of spectra. It also appears to be useful, shedding light on the chemical state of materials, when additional information about a sample is known. The EW XPS is simply defined as the area of a narrow scan divided by the height of the maximum of its peak envelope. To limit any ambiguity in EW XPS for a series of spectra, we may also list the peak position of the maximum of the envelope (PE max ). The potential usefulness and limitations of the EW XPS and PE max parameters are demonstrated by their application to the narrow scans of: (i) four sets of ozone-treated carbon nanotubes (EW XPS ∼ 2.11–2.16 eV for a Shirley background, and up to 2.88 eV for no background, PE max ∼ 284.4–284.5 eV), (ii) a series of silicon wafers with different oxide thicknesses (EW XPS ∼ 1.5–2.8 eV, PE max ∼ 99–103 eV), (iii) hydrogen-terminated silicon before and after derivatization with pentyl groups, and after annealing of

  17. The equivalent width as a figure of merit for XPS narrow scans

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Bhupinder [Department of Chemistry and Biochemistry, C-100 BNSN, Brigham Young University, Provo, UT 84602 (United States); Velázquez, Daniel [Department of Physics, Illinois Institute of Technology, Chicago, IL 60616 (United States); Terry, Jeff, E-mail: terryj@iit.edu [Department of Physics, Illinois Institute of Technology, Chicago, IL 60616 (United States); Linford, Matthew R., E-mail: mrlinford@chem.byu.edu [Department of Chemistry and Biochemistry, C-100 BNSN, Brigham Young University, Provo, UT 84602 (United States)

    2014-12-15

    Highlights: • We introduce a new figure of merit for XPS narrow scans: the equivalent width (EW{sub XPS}). • EW{sub XPS} is less subjective and involves lesser user bias than traditional peak fitting. • EW{sub XPS} is responsive to changes in chemical states of materials. • EW{sub XPS} could be used for quality control and comparing spectra from similar samples. • EW{sub XPS} has the potential to be part of an expert software system for machine interpretation of spectra. - Abstract: X-ray Photoelectron Spectroscopy (XPS) is a widely used surface analytical tool that provides information about the near surface regions of materials. And while indispensable for XPS data analysis, peak fitting of narrow scans is often a fairly subjective exercise. Herein we introduce the equivalent width (EW) as an additional and less subjective figure of merit for XPS narrow scans. We believe that this parameter will prove particularly useful for analyzing series of similar or nominally identical spectra, perhaps as a component of an expert software system for the machine interpretation of spectra. It also appears to be useful, shedding light on the chemical state of materials, when additional information about a sample is known. The EW{sub XPS} is simply defined as the area of a narrow scan divided by the height of the maximum of its peak envelope. To limit any ambiguity in EW{sub XPS} for a series of spectra, we may also list the peak position of the maximum of the envelope (PE{sub max}). The potential usefulness and limitations of the EW{sub XPS} and PE{sub max} parameters are demonstrated by their application to the narrow scans of: (i) four sets of ozone-treated carbon nanotubes (EW{sub XPS} ∼ 2.11–2.16 eV for a Shirley background, and up to 2.88 eV for no background, PE{sub max} ∼ 284.4–284.5 eV), (ii) a series of silicon wafers with different oxide thicknesses (EW{sub XPS} ∼ 1.5–2.8 eV, PE{sub max} ∼ 99–103 eV), (iii) hydrogen-terminated silicon before

  18. Temperature effects in the valence fluctuation of europium intermetallic compounds

    International Nuclear Information System (INIS)

    Menezes, O.L.T. de; Troper, A.; Gomes, A.A.

    1978-03-01

    A previously reported model for valence fluctuations in europium compound in order to account for thermal occupation effect. Experimental results are critically discussed and new experiments are suggested

  19. Positive valence music restores executive control over sustained attention.

    Science.gov (United States)

    Baldwin, Carryl L; Lewis, Bridget A

    2017-01-01

    Music sometimes improves performance in sustained attention tasks. But the type of music employed in previous investigations has varied considerably, which can account for equivocal results. Progress has been hampered by lack of a systematic database of music varying in key characteristics like tempo and valence. The aims of this study were to establish a database of popular music varying along the dimensions of tempo and valence and to examine the impact of music varying along these dimensions on restoring attentional resources following performance of a sustained attention to response task (SART) vigil. Sixty-nine participants rated popular musical selections that varied in valence and tempo to establish a database of four musical types: fast tempo positive valence, fast tempo negative valence, slow tempo positive valence, and slow tempo negative valence. A second group of 89 participants performed two blocks of the SART task interspersed with either no break or a rest break consisting of 1 of the 4 types of music or silence. Presenting positive valence music (particularly of slow tempo) during an intermission between two successive blocks of the SART significantly decreased miss rates relative to negative valence music or silence. Results support an attentional restoration theory of the impact of music on sustained attention, rather than arousal theory and demonstrate a means of restoring sustained attention. Further, the results establish the validity of a music database that will facilitate further investigations of the impact of music on performance.

  20. Magneto-optical studies of valence instability in europium and terbium phosphors

    Energy Technology Data Exchange (ETDEWEB)

    Rodrigues, Lucas C.V. [Department of Chemistry, University of Turku, FI-20014 Turku (Finland); Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Hölsä, Jorma [Department of Chemistry, University of Turku, FI-20014 Turku (Finland); Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Turku University Centre for Materials and Surfaces (MatSurf) (Finland); University of the Free State, Department of Physics, Bloemfontein (South Africa); Brito, Hermi F. [Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Maryško, Miroslav [Institute of Physics, The Academy of Sciences of the Czech Republic, Cukrovarnická 10, CZ-162 53 Praha 6 (Czech Republic); Matos, Jivaldo R. [Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Paturi, Petriina [Wihuri Physical Laboratory, Department of Physics and Astronomy, University of Turku, FI-20014 Turku (Finland); Rodrigues, Rodrigo V. [Instituto de Química, Universidade de São Paulo, São Paulo, -SP (Brazil); Lastusaari, Mika, E-mail: miklas@utu.fi [Department of Chemistry, University of Turku, FI-20014 Turku (Finland); Turku University Centre for Materials and Surfaces (MatSurf) (Finland)

    2016-02-15

    The impurities and dopants' inappropriate valences may deteriorate the performance of luminescent materials, cause waste of the precious rare earth (R) material and thus incur financial losses. The usual methods to detect the valence of rare earths; XPS, Mössbauer and XANES spectroscopies, are not sensitive enough for low concentrations and the EPR methods are not very suitable for powders. In this work, the comparison between the theoretical and experimental temperature-dependent paramagnetic susceptibilities was used to obtain quantitatively the concentrations of the impurity valence in Eu{sub 2}O{sub 2}S and Tb{sub 2}O{sub 2}SO{sub 4}, both containing nominally only R{sup 3+}. Minute (ppm level) Eu{sup 2+} impurities could be analyzed because of the huge difference in the paramagnetic susceptibility between Eu{sup 2+} and Eu{sup 3+} at low temperatures. However, temperatures below 50 K are then needed whilst the Tb{sup IV} impurity in a Tb{sup 3+} matrix can be observed already at higher temperatures. The latter method based on comparing the slopes of the Tb{sup 3+}/Tb{sup IV} paramagnetic susceptibility vs temperature curves for the Tb{sup 3+}/Tb{sup IV} couple is less sensitive than for the Eu{sup 2+}/Eu{sup 3+} one. Finally, the host independent temperature evolution of the paramagnetic susceptibility was calculated for Gd{sup 3+} (or Eu{sup 2+} or Tb{sup IV}) to yield a simple analytical expression to be used universally. - Highlights: • Wave functions for Eu{sup 3+}/Tb{sup 3+} with crystal field effect calculated for oxysulfide/sulfate. • Paramagnetic susceptibility between 4 and 300 K simulated for 4f{sup 6/7/8} configurations. • Amount of valence impurities (Eu{sup 2+} and Tb{sup IV}) evaluated from susceptibility data. • Waste of raw materials and loss of luminescence intensity of phosphors can be avoided.

  1. XPS utilization in the characterization of glycerol based polyesters; Utilizacao de XPS na caracterizacao de poliesteres a base de glicerol

    Energy Technology Data Exchange (ETDEWEB)

    Brioude, M.M.; Miranda, C.S.; Pereira, R.; Ohara, L.; Bargiela, P.; Rocha, M.G.M.C.; Jose, N.M., E-mail: mgcr@ufba.b [Universidade Federal da Bahia (UFBA), Salvador, BA (Brazil). Escola Politecnica. Inst. de Quimica

    2010-07-01

    X-ray photoelectron spectroscopy-XPS allows the determination of all elements of the periodical table, except hydrogen and helium, and is a very used technique for the polymers characterization, its spectra constitutes a 'fingerprint' of the material. Two samples of polymers were prepared from glycerol and fumaric acid and glycerol and terephthalic acid, with a molar ratio of 1:1 and 1:1.5. The general spectra show the presence of carbon and oxygen, the main components of the polymer. From the binding energies values of the C1s and O1s high resolution spectra it was possible to determine the carbon functional groups. Their concentration were determined and the presence of the aromatic carbon in the terephthalic polyesters was observed, and also similar proportions of aliphatic carbon and ester groups in the fumaric acid polyesters. For both polyesters, an amount of carboxyl group appears, indicating the terminal non-reacted groups. These results were confirmed qualitatively by FTIR. (author)

  2. XPS Protocol for the Characterization of Pristine and Functionalized Single Wall Carbon Nanotubes

    Science.gov (United States)

    Sosa, E. D.; Allada, R.; Huffman, C. B.; Arepalli, S.

    2009-01-01

    Recent interest in developing new applications for carbon nanotubes (CNT) has fueled the need to use accurate macroscopic and nanoscopic techniques to characterize and understand their chemistry. X-ray photoelectron spectroscopy (XPS) has proved to be a useful analytical tool for nanoscale surface characterization of materials including carbon nanotubes. Recent nanotechnology research at NASA Johnson Space Center (NASA-JSC) helped to establish a characterization protocol for quality assessment for single wall carbon nanotubes (SWCNTs). Here, a review of some of the major factors of the XPS technique that can influence the quality of analytical data, suggestions for methods to maximize the quality of data obtained by XPS, and the development of a protocol for XPS characterization as a complementary technique for analyzing the purity and surface characteristics of SWCNTs is presented. The XPS protocol is then applied to a number of experiments including impurity analysis and the study of chemical modifications for SWCNTs.

  3. The uranium valence in the Cs-U-O system: crystal structures and thin layers contribution to the physico-chemical study of grain boundaries in irradiated fuel

    International Nuclear Information System (INIS)

    Van Den Berghe, S.

    2002-01-01

    The document is an abstract of a PhD thesis. The PhD thesis investigates the way in which cesium, through its effect on oxygen, modifies the uranium environment and in consequence the valence state of the uranium atom itself. To this end, the crystallographic structure and local uranium environment of several uranium uranates has been determined by Rietveld refinement of neutron and X-ray diffraction data. Thin layers of stoichiometric uranium dioxide were prepared using sputter deposition techniques and used to model interactions on the grain boundaries. They were covered with cesium and exposed to controlled amounts of oxygen, while the uranium valence state was monitored with Ultraviolet Photoelectron Spectroscopy and XPS

  4. Observation of Rydberg transitions from the inner valence shell of ethane

    International Nuclear Information System (INIS)

    Dillon, M.A.; Tanaka, H.; Spence, D.

    1987-01-01

    The electron impact spectrum of ethane has been examined in a region that includes ionization out of the inner valence shell. One diffuse structure and a progression of ten vibrational bands have been found in a 4 eV range below and to some degree overlapping the 2 A 2 /sub u/ ion threshold. Evidence indicates that the observed transitions belong to the symmetry forbidden Rydberg series (2a 2 /sub u/) 2 →(2a 2 /sub u/, npσ or npπ)

  5. On the electrical conductivity for the mixed-valence model with d-f correlations

    International Nuclear Information System (INIS)

    Borgiel, W.; Matlak, M.

    1984-08-01

    The static electrical conductivity of mixed-valence systems is calculated in the model of Matlak and Nolting [Solid State Commun., 47, 11 (1983); Z. Phys., B55, 103 (1984)]. The method takes into account the atomic properties more exactly than those connected with bands, and hence emphasizes the ionic aspect of the problem in some way; indeed, the calculations overestimate the atomic properties. Some results are presented in a graph. It is found that the electrical conductivity depends strongly on temperature and the electron-hole attraction constant

  6. Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

    Energy Technology Data Exchange (ETDEWEB)

    Pandiyan, Rajesh [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); Oulad Elhmaidi, Zakaria [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada); University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); Sekkat, Zouheir [Optics & Photonics Center, Moroccan Foundation for Advanced Science, Innovation and Research, Rabat (Morocco); Abd-lefdil, Mohammed [University of Mohammed V, Faculty of Sciences, Materials Physics Laboratory, B.P. 1014 Rabat (Morocco); El Khakani, My Ali, E-mail: elkhakani@emt.inrs.ca [Institut National de la Recherche Scientifique, Centre-Énergie, Matériaux et Télécommunications, 1650 Blvd. Lionel–Boulet, C.P. 1020, Varennes, QC J3X-1S2 (Canada)

    2017-02-28

    Highlights: • High quality CZTS thin films grown by means of PLD technique without resorting to any post sulfurization process. • Effect of thermal annealing treatments (in the 200–500 °C range) on the structural, morphological and optoelectronic properties of PLD-CZTS films. • Experimental determination of key optoelectronic parameters (i.e.; E{sub g}, VBM, ϕ, I{sub p}, and χ) enabling the reconstruction of energy band electronic structure of the PLD-CZTS films. • Investigation on the energy band alignments of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials. - Abstract: We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (T{sub a}), but their crystallinity is much improved for T{sub a} ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with T{sub a} (from ∼14 nm at RT to 70 nm at T{sub a} = 500 °C with a value around 40 nm for T{sub a} = 300–400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV–vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at T{sub a} = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS

  7. Seniority Number in Valence Bond Theory.

    Science.gov (United States)

    Chen, Zhenhua; Zhou, Chen; Wu, Wei

    2015-09-08

    In this work, a hierarchy of valence bond (VB) methods based on the concept of seniority number, defined as the number of singly occupied orbitals in a determinant or an orbital configuration, is proposed and applied to the studies of the potential energy curves (PECs) of H8, N2, and C2 molecules. It is found that the seniority-based VB expansion converges more rapidly toward the full configuration interaction (FCI) or complete active space self-consistent field (CASSCF) limit and produces more accurate PECs with smaller nonparallelity errors than its molecular orbital (MO) theory-based analogue. Test results reveal that the nonorthogonal orbital-based VB theory provides a reverse but more efficient way to truncate the complete active Hilbert space by seniority numbers.

  8. Fluorescence properties of valence-controlled Eu2+ and Mn2+ ions in aluminosilicate glasses

    International Nuclear Information System (INIS)

    Van Tuyen, Ho; Nonaka, Takamasa; Yamanaka, Ken-ichi; Chau, Pham Minh; Quy Hai, Nguyen Thi; Quang, Vu Xuan; Nogami, Masayuki

    2017-01-01

    Controlling of valence states of metal ions doped in glasses has attracted considerable interest due to the possibility of looking toward optical applications. In this study, new Na 2 O-Al 2 O 3 -SiO 2 glasses were developed to dope Eu 2+ and Mn 2+ with well controlled valence states by heating in H 2 gas atmosphere, and the changes in the valence state of doped-ions and their fluorescence properties were investigated using visible and infrared optical absorption spectroscopies, X-ray absorption fine structure spectroscopy, and fluorescence spectroscopy. Among Eu 3+ , Mn 3+ and Mn 2+ ions incorporated in the as-prepared glasses, the Eu 3+ and Mn 3+ ions were reduced to Eu 2+ and Mn 2+ ions, respectively, by heating in H 2 gas and OH bonds were concurrently formed. The fluorescence spectra of glasses heated in H 2 exhibited broad emission bands at 450 and 630 nm wavelength, assigned to the Eu 2+ and Mn 2+ , respectively, ions, in which the fluorescence intensity at 450 nm was observed to decrease with increasing Mn 2+ ion content. The increased fluorescence intensities were analyzed as the energy transfer from Eu 2+ to Mn 2+ ions and the energy transfer efficiency was estimated with a concentration of Eu 2+ and Mn 2+ ions.

  9. Probing Transient Valence Orbital Changes with Picosecond Valence-to-Core X-ray Emission Spectroscopy

    DEFF Research Database (Denmark)

    March, Anne Marie; Assefa, Tadesse A.; Boemer, Christina

    2017-01-01

    We probe the dynamics of valence electrons in photoexcited [Fe(terpy)2]2+ in solution to gain deeper insight into the Fe ligand bond changes. We use hard X-ray emission spectroscopy (XES), which combines element specificity and high penetration with sensitivity to orbital structure, making...... valence orbitals to the nascent core-hole. Vtc-XES offers particular insight into the molecular orbitals directly involved in the light-driven dynamics; a change in the metal ligand orbital overlap results in an intensity reduction and a blue energy shift in agreement with our theoretical calculations...... and more subtle features at the highest energies reflect changes in the frontier orbital populations....

  10. Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity

    International Nuclear Information System (INIS)

    Nelson, A.J.

    1995-01-01

    Synchrotron radiation soft x-ray photoemission spectroscopy and reflection high-energy electron diffraction were used to investigate the structural and electronic properties at the ZnSe/CdTe(100) heterojunction interface. ZnSe overlayers were sequentially grown in steps on p-type CdTe(100) single crystals at 200 degree C. In situ photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Cd 4d, Zn 3d, and Te 4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the ZnSe/CdTe heterojunction valence band discontinuity and the consequent heterojunction band diagram. Results of these measurements reveal that the valence band offset is ΔE v =0.20 eV. copyright 1995 American Institute of Physics

  11. Prediction of valence and arousal from music features

    NARCIS (Netherlands)

    Den Brinker, A.C.; Van Dinther, C.H.B.A.; Skowronek, J.

    2011-01-01

    Mood is an important attribute of music and knowledge on mood can beused as a basic ingredient in music recommender and retrieval systems. Moods are assumed to be dominantly determined by two dimensions:valence and arousal. An experiment was conducted to attain data forsong-based ratings of valence

  12. Semiempirical search for oxide superconductors based on bond valence sums

    International Nuclear Information System (INIS)

    Tanaka, S.; Fukushima, N.; Niu, H.; Ando, K.

    1992-01-01

    Relationships between crystal structures and electronic states of layered transition-metal oxides are analyzed in the light of bond valence sums. Correlations between the superconducting transition temperature T c and the bond-valence-sum parameters are investigated for the high-T c cuprate compounds. Possibility of making nonsuperconducting oxides superconducting is discussed. (orig.)

  13. Investigating Valence and Autonomy in Children's Relationships with Imaginary Companions

    Science.gov (United States)

    McInnis, Melissa A.; Pierucci, Jillian M.; Gilpin, Ansley Tullos

    2013-01-01

    Little research has explored valence and autonomy in children's imaginary relationships. In the present study, a new interview (modeled after an existing measure for real relationships) was designed to elicit descriptions of both positive and negative interactions with imaginary companions and to provide a measure of relationship valence and…

  14. Change in optimum genetic algorithm solution with changing band discontinuities and band widths of electrically conducting copolymers

    Science.gov (United States)

    Kaur, Avneet; Bakhshi, A. K.

    2010-04-01

    The interest in copolymers stems from the fact that they present interesting electronic and optical properties leading to a variety of technological applications. In order to get a suitable copolymer for a specific application, genetic algorithm (GA) along with negative factor counting (NFC) method has recently been used. In this paper, we study the effect of change in the ratio of conduction band discontinuity to valence band discontinuity (Δ Ec/Δ Ev) on the optimum solution obtained from GA for model binary copolymers. The effect of varying bandwidths on the optimum GA solution is also investigated. The obtained results show that the optimum solution changes with varying parameters like band discontinuity and band width of constituent homopolymers. As the ratio Δ Ec/Δ Ev increases, band gap of optimum solution decreases. With increasing band widths of constituent homopolymers, the optimum solution tends to be dependent on the component with higher band gap.

  15. Architectural Representation of Valence in the Limbic System

    Science.gov (United States)

    Namburi, Praneeth; Al-Hasani, Ream; Calhoon, Gwendolyn G; Bruchas, Michael R; Tye, Kay M

    2016-01-01

    In order to thrive, animals must be able to recognize aversive and appetitive stimuli within the environment and subsequently initiate appropriate behavioral responses. This assignment of positive or negative valence to a stimulus is a key feature of emotional processing, the neural substrates of which have been a topic of study for several decades. Until recently, the result of this work has been the identification of specific brain regions, such as the basolateral amygdala (BLA) and nucleus accumbens (NAc), as important to valence encoding. The advent of modern tools in neuroscience has allowed further dissection of these regions to identify specific populations of neurons signaling the valence of environmental stimuli. In this review, we focus upon recent work examining the mechanisms of valence encoding, and provide a model for the systematic investigation of valence within anatomically-, genetically-, and functionally defined populations of neurons. PMID:26647973

  16. A study of the valence shell spectroscopic and thermodynamic properties of trifluoronitrosomethane cations

    International Nuclear Information System (INIS)

    Graham, D.M.; Powis, I.; Underwood, J.G.; Shaw, D.A.; Holland, D.M.P.

    2012-01-01

    Highlights: ► Fragmentation processes in CF 3 NO have been studied using mass spectrometry. ► Singly charged atomic fragments have been observed. ► Experimental appearance energies have been compared to thermochemical estimates. ► Hartree Fock transition energies and oscillator strengths have been calculated. - Abstract: A time-of-flight mass spectrometry study has been carried out to investigate the fragmentation processes occurring in trifluoronitrosomethane (CF 3 NO) as a result of valence shell photoionisation. Synchrotron radiation has been used to record spectra in the photon energy range ∼10–42 eV, and appearance energies have been determined for 10 fragment ions. At high excitation energies, singly charged atomic fragments have been observed. For the main dissociation channels, leading to the formation of NO + , CF 2 + or CF 3 + , the experimental appearance energies have been compared with thermochemical estimates, and a satisfactory agreement has been found. Structure observed in the total ion yield curve has been interpreted with the aid of excited state transition energies and oscillator strengths obtained in a time-dependent Hartree Fock calculation. The theoretical results show that configuration interaction strongly affects many of the valence states. A HeI excited photoelectron spectrum of CF 3 NO has been measured and the orbital ionisation energies have been compared with theoretical values computed using the Outer Valence Green’s Function approach. A large Franck–Condon gap is observed between the 12a′ (n - ) and the 11a ′ state bands, in accord with the calculated vertical ionisation energies of 10.87 and 16.32 eV for the 12a′ (n − ) and the 11a′ (n + ) orbitals, respectively. In the ion yield curve, the corresponding energy range is strongly influenced by autoionising valence states.

  17. Emotion and language: Valence and arousal affect word recognition

    Science.gov (United States)

    Brysbaert, Marc; Warriner, Amy Beth

    2014-01-01

    Emotion influences most aspects of cognition and behavior, but emotional factors are conspicuously absent from current models of word recognition. The influence of emotion on word recognition has mostly been reported in prior studies on the automatic vigilance for negative stimuli, but the precise nature of this relationship is unclear. Various models of automatic vigilance have claimed that the effect of valence on response times is categorical, an inverted-U, or interactive with arousal. The present study used a sample of 12,658 words, and included many lexical and semantic control factors, to determine the precise nature of the effects of arousal and valence on word recognition. Converging empirical patterns observed in word-level and trial-level data from lexical decision and naming indicate that valence and arousal exert independent monotonic effects: Negative words are recognized more slowly than positive words, and arousing words are recognized more slowly than calming words. Valence explained about 2% of the variance in word recognition latencies, whereas the effect of arousal was smaller. Valence and arousal do not interact, but both interact with word frequency, such that valence and arousal exert larger effects among low-frequency words than among high-frequency words. These results necessitate a new model of affective word processing whereby the degree of negativity monotonically and independently predicts the speed of responding. This research also demonstrates that incorporating emotional factors, especially valence, improves the performance of models of word recognition. PMID:24490848

  18. Experimental studies of narrow band effects in the actinides

    Energy Technology Data Exchange (ETDEWEB)

    Brodsky, M.B.

    1976-01-01

    In many actinide metallic systems the f-electrons exhibit band behavior. This is a consequence of direct f-f wave function overlap or hybridization of f-electrons with s-, p-, and d-electrons. The f-bands can be responsible for large electronic densities of states at the Fermi level which may lead to band magnetism of various types. Although the concept of valence instabilities must be approached cautiously especially in the light actinides, it would not be surprising to observe them in the future, especially in Am compounds.

  19. Experimental studies of narrow band effects in the actinides

    International Nuclear Information System (INIS)

    Brodsky, M.B.

    1976-01-01

    In many actinide metallic systems the f-electrons exhibit band behavior. This is a consequence of direct f-f wave function overlap or hybridization of f-electrons with s-, p-, and d-electrons. The f-bands can be responsible for large electronic densities of states at the Fermi level which may lead to band magnetism of various types. Although the concept of valence instabilities must be approached cautiously especially in the light actinides, it would not be surprising to observe them in the future, especially in Am compounds

  20. Fine structure and energy spectrum of exciton in direct band gap cubic semiconductors with degenerate valence bands

    International Nuclear Information System (INIS)

    Nguyen Toan Thang; Nguyen Ai Viet; Nguyen Que Huong

    1987-06-01

    The influence of the cubic structure on the energy spectrum of direct exciton is investigated, using the new method suggested by Nguyen Van Hieu and co-workers. Explicit expressions of the exciton energy levels 1S, 2S and 2P are derived. A comparison with the experiments and the other theory is done for ZnSe. (author). 10 refs, 1 fig., 2 tabs

  1. XPS, AES and laser raman spectroscopy: A fingerprint for a materials surface characterisation

    International Nuclear Information System (INIS)

    Zaidi Embong

    2011-01-01

    This review briefly describes some of the techniques available for analysing surfaces and illustrates their usefulness with a few examples such as a metal and alloy. In particular, Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS) and laser Raman spectroscopy are all described as advanced surface analytical techniques. In analysing a surface, AES and XPS would normally be considered first, with AES being applied where high spatial resolution is required and XPS where chemical state information is needed. Laser Raman spectroscopy is useful for determining molecular bonding. A combination of XPS, AES and Laser Raman spectroscopy can give quantitative analysis from the top few atomic layers with a lateral spatial resolution of < 10 nm. (author)

  2. Speciation of uranium in minerals by Sem, Tem, μ-PIXE, XPS and XAFS

    International Nuclear Information System (INIS)

    Toshihiko Ohnuki; Hiroshi Isobe; Tomihiro Kamiya; Takuro Sakai; Takashi Murakami

    2001-01-01

    Many kinds of electromagnetic waves and particle beams are used as analytical probes for the investigation of uranium-mineralogy and speciation. The representatives of the probes are SEM, TEM, μ-PIRE, XPS and XAFS. Each of these analytical probes has its own advantages and disadvantages. We have performed studies to compare the advantages and disadvantages on the basis of the analysis of the distribution and speciation of U containing rock samples collected at the Koongarra uranium deposit, Australia. The spatial resolutions of the probes are in the order of TEM>SEM, μ-PIXE>XFAS, XPS. The lower detection limits of the probes are in the order of μ-PIXE< TEM, SEM< XFAS, XPS. Oxidation state of U was determined by XFAS and XPS. These results indicate that combination of the above probes can give us sufficient data on U speciation not only in natural rock samples but in solid samples obtained in the laboratory. (authors)

  3. Structural, photoluminescence and XPS properties of Tm3þ ions in ZnO nanostructures

    CSIR Research Space (South Africa)

    Kabongo, GL

    2017-07-01

    Full Text Available of photoluminescence (PL) spectroscopy. Finally, Tm 4d core level was detected in ZnO: 0.5 mol% Tm(sup3+) sample from high resolution X-Ray Photoelectron Spectroscopy (XPS) scan....

  4. Research and industrial application of x-ray photoelectron spectroscopy (XPS) in Malaysia

    International Nuclear Information System (INIS)

    Mohd Ambar Yarmo; Abd Razak Daud; Abdul Kariem Arof

    2000-01-01

    As a developing country, Malaysia is fully committed to research and development especially for industrial development. One of priority fields is advanced materials and surface analysis of such materials is an important aspect in research. Among the tools for surface science analysis is x-ray photoelectron spectroscopy (XPS) which can be considered new to this country. The industrial sector is also keen to solve their problems and developing their products using XPS. The microelectronic and electrical industries are interested in solving problems related to metal-metal joining , gold silica peeling, surface corrosion and surface coating. The glove industry uses XPS to solve problems due to staining and color fading of their products. Research conducted in universities and research institutes that mainly deal with catalysis, membranes for fuel cells, sensors, batteries, corrosion phenomena and interface interaction in coating finds XPS a useful technique for surface studies. Specific examples from various sectors will be presented in this paper. (Author)

  5. Intersite interactions and susceptibility in mixed valence systems

    International Nuclear Information System (INIS)

    Xiaoqian Wang; Gao Lin; Bingjian Ni; Fusui Liu.

    1985-10-01

    This paper considers the effect of intersite processes on the susceptibility in mixed valence system. The method of thermodynamical perturbation used in this paper can also be generalized to study other properties of mixed valence system. The general formula of partition function of two-site interactions for the mixed valence system is given. The numerical calculations show that the intersite interaction is large enough to explain the minimum of susceptibility discovered in experiments. The different types of our theoretical curves predict that the susceptibility should exhibit a rich variety of behaviour at low temperature for various materials. (author)

  6. Valence bond model potential energy surface for H4

    International Nuclear Information System (INIS)

    Silver, D.M.; Brown, N.J.

    1980-01-01

    Potential energy surfaces for the H 4 system are derived using the valence bond procedure. An ab initio evaluation of the valence bond energy expression is described and some of its numerical properties are given. Next, four semiempirical evaluations of the valence bond energy are defined and parametrized to yield reasonable agreement with various ab initio calculations of H 4 energies. Characteristics of these four H 4 surfaces are described by means of tabulated energy minima and equipotential contour maps for selected geometrical arrangements of the four nuclei

  7. The use of XPS and i.r. spectroscopy in zinc mineral flotation studies

    International Nuclear Information System (INIS)

    Garbassi, F.; Morabini, A.; Cozza, C.

    1985-01-01

    In this work, XPS (X-ray photoelectron spectroscopy) is applied to the study of the interaction of dodecylamine acetate with smithsonite ZnCo 3 , in relation with the problem of flotation of the mineral. This study confirms that, in spite of ultra-high conditions during analysis XPS is a technique offering a very valuable contribution to the elucidation of mineral flotation problems

  8. Instrument-related geometrical factors affecting the intensity in XPS and ARXPS experiments

    Energy Technology Data Exchange (ETDEWEB)

    Herrera-Gomez, A., E-mail: aherrera@qro.cinvestav.mx [CINVESTAV-Unidad Queretaro, Queretaro 76230 (Mexico); Aguirre-Tostado, F.S. [Centro de Investigacion en Materiales Avanzados, Apodaca, Nuevo Leon 66600 (Mexico); Mani-Gonzalez, P.G.; Vazquez-Lepe, M.; Sanchez-Martinez, A.; Ceballos-Sanchez, O. [CINVESTAV-Unidad Queretaro, Queretaro 76230 (Mexico); Wallace, R.M. [Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080 (United States); Conti, G.; Uritsky, Y. [Applied Materials, Santa Clara, CA 95054 (United States)

    2011-11-15

    Highlights: {yields} Instrument geometrical-factors affecting the XPS angular dependence are described. {yields} The geometrical factors in XPS instruments are transferable to other systems. {yields} Practical protocols are presented for assessing the size of analysis area and volume. {yields} Practical protocols are presented for assessing the size of the X-ray beam spot. {yields} Practical protocols are described for assessing the manipulator's axis of rotation. - Abstract: The angular dependence of the X-ray photoelectron spectroscopy (XPS) signal is influenced not only by the electron take-off angle, but also by instrument-related geometrical factors. The XPS signal is, in fact, integrated over the overlap between the X-ray beam, the spectrometer analysis volume, and the sample surface. This overlap depends on the size and shape of the spectrometer analysis volume and X-ray beam, as well as on their relative orientation. In this paper it is described the models and protocols for the characterization of the parameters defining the geometry of an XPS instrument. The protocols include practical methods for assessing the spectrometer analysis area and the X-ray beam spot dimension. Simple systems consisting of flat and 'thick' gold films on silicon wafers were employed. The parameters found with those samples are transferable to other more complex systems since they are geometrical in nature. The method allows for the prediction of the actual intensity of XPS peaks, hence removing the need of normalizing the peak areas to the area of a determined substrate peak. The associated reduction of the uncertainty in half is of special importance since the quantitative analysis of angle-resolved XPS data could be very sensitive to noise. Two rotating and one non-rotating XPS instruments are described. Some examples of the applications of the method are also provided.

  9. Combined PIXE and XPS analysis on republican and imperial Roman coins

    International Nuclear Information System (INIS)

    Dacca, A.; Prati, P.; Zucchiatti, A.; Lucarelli, F.; Mando, P.A.; Gemme, G.; Parodi, R.; Pera, R.

    2000-01-01

    A combined PIXE and XPS analysis has been performed on a few Roman coins of the republican and imperial age. The purpose was to investigate via XPS the nature and extent of patina in order to be capable of extracting PIXE data relative to the coins bulk. The inclusion of elements from the surface layer, altered by oxidation and inclusion, is a known source of uncertainty in PIXE analyses of coins, performed to assess the composition and the provenance

  10. Valence, magnetism and conduction in the intermediate valence compounds: the case SmB6

    International Nuclear Information System (INIS)

    Derr, J.

    2006-09-01

    In some rare earth based compounds, the 4f level is situated so close to the Fermi level that the valence of the compound can become intermediate between two integer values. The so called 'intermediate valence' compound of Samarium hexaboride (SmB 6 ) is one typical example of the exciting physics which can result from this quantum equilibrium between two valence configurations. The first configuration (Sm 2+ ) corresponds to an insulating and non magnetic state whereas the second one (Sm 3+ ) would theoretically give a magnetic and metallic ground state. This dissertation deals with the influence of pressure on this equilibrium. Specific heat measurements under pressure evidenced a new long range magnetic ordering for pressures higher than p c ∼ 10 GPa. On another hand, transport measurements measured for the first time in good conditions of hydrostatics found a reliable and reproducible critical pressure for the insulator to metal transition equal to p c . The phase diagram of SmB 6 is now well known and the observation for the first time of a magnetic anomaly in the high pressure resistivity curves certifies that the onset of the magnetic phase really coincide with the closure of the gap. This change at the critical pressure p c is discussed in a general frame taking into account the Kondo lattice temperature as a key parameter for the renormalization of the wavefunction from one integer configuration to the other whereas the valence itself is still intermediate. This general idea seems to be valid also for other systems studied in this dissertation like SmS or TmSe and could even be valid for more general cases (Ytterbium, Cerium). In the same time, resistivity measurements under uniaxial stress were undertaken. The result is a strong anisotropy effect observed on the pressure dependence of the residual resistivity in the compound SmB 6 . The comparison with the transport under hydrostatic conditions enables us to consider a new idea for the nature of the gap

  11. f-band narrowing in uranium intermetallics

    International Nuclear Information System (INIS)

    Dunlap, B.D.; Litterst, F.J.; Malik, S.K.; Kierstead, H.A.; Crabtree, G.W.; Kwok, W.; Lam, D.J.; Mitchell, A.W.

    1987-01-01

    Although the discovery of heavy fermion behavior in uranium compounds has attracted a great deal of attention, relatively little work has been done which is sufficiently systematic to allow an assessment of the relationship of such behavior to more common phenomena, such as mixed valence, narrow-band effects, etc. In this paper we report bulk property measurements for a number of alloys which form a part of such a systematic study. The approach has been to take relatively simple and well-understood materials and alter their behavior by alloying to produce heavy fermion or Kondo behavior in a controlled way

  12. Effect of valence on the electromigration in silver

    International Nuclear Information System (INIS)

    Nguyen Van Doan

    1970-01-01

    It is shown that the apparent effective valence Z B ** of a solute deduced from experiments differs from the true effective valence Z B * defined in the atomic models by a corrective term due to the 'vacancy flow effect'. The experimental results suggest that this corrective term is very important and that it is negative for transition elements; this hypothesis is confirmed for the case of iron in a copper matrix. For the elements to the right of silver in the periodic table, where the correction can be neglected, the effective valence of the solute varies linearly with z (z + 1), z being the difference between the valency of the solute and the solvent; in contrast, the further the solute is from the solvent in the periodic table the more nearly the electronic structure of the ion at the saddle point resembles that of the ion at the equilibrium position. (author) [fr

  13. Modulation of motor-meaning congruity effects for valenced words

    OpenAIRE

    Brookshire, Geoffrey; Ivry, Richard; Casasanto, Daniel

    2010-01-01

    We investigated the extent to which emotionally valenced words automatically cue spatio-motor representations. Participants made speeded button presses, moving their hand upward or downward while viewing words with positive or negative valence. Only the color of the words was relevant to the response; on target trials, there was no requirement to read the words or process their meaning. In Experiment 1, upward responses were faster for positive words, and downward for negative words. This eff...

  14. Valence band states in Si-based p-type delta-doped field effect transistors

    International Nuclear Information System (INIS)

    Martinez-Orozco, J C; Vlaev, Stoyan J

    2009-01-01

    We present tight-binding calculations of the hole level structure of δ-doped Field Effect Transistor in a Si matrix within the first neighbors sp 3 s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type δ-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p 2d ) of the p-type δ-doped well and the contact voltage (V c ). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  15. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-01-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest

  16. State density of valence-band tail and photoconductivity amorphous hydrogenated silicon

    International Nuclear Information System (INIS)

    Golikova, O.A.; Domashevskaya, Eh.P.; Mezdrogina, M.M.; Sorokina, K.L.; Terekhov, V.A.; Trostyanskij, S.N.

    1991-01-01

    Relation between photoconductivity and g(ε) mobility gap within the range adjoining to the top (mobility end) of valent zone (VZ tail) in a-Si:H film is studied. Stationary photoconductivity within spectral maximum range (χ=0.63μm) at Φ=10 17 photxcm -2 s -1 flow is measured. Density of g(ε) states are controlled using ultrasoft X-ray emission spectroscopy. It is shown, that correlation between photoconductivity and width of VZ tail may reflect the fact of their similar dependence o film heterogeneity: at the increase of share of microholes there occur both expansion of VZ tail and growth of number of respective hydrogen complexes and torn relations which results in drop of photoconductivity

  17. Photoemission intensity oscillations in the valence bands of C70 film

    International Nuclear Information System (INIS)

    Li Yanjun; Wang Peng; Ni Jingfu; Meng Liang; Wang Xiaobo; Sheng Chunqi; Li Hongnian; Zhang Wenhua; Xu Yang; Xu Faqiang; Zhu Junfa

    2011-01-01

    Highlights: → The article develops a procedure for obtaining the accurate spectral intensities in the studies of the photoionization cross-section oscillation of C 70 . → The article fulfills the observation of all oscillating periods of the cross-section oscillation of C 70 . → The article reports the oscillating data for more molecular orbitals (feature C in the article) as compared with the published works. → The article reveals that some simple theoretical models based on the spherical symmetric approximation survive for the ellipsoidally shaped C 70 . - Abstract: We have measured and analyzed the photoemission spectra (PES) of a C 70 film in the photon energy region from 13.4 eV to 98.4 eV. The photoelectron intensities of two C 2p π-derived features (denoted by A and B) oscillate regularly in the whole energy region with some fine structures below ∼30 eV. To obtain the detailed information of the oscillations, we have developed a sophisticated but practical procedure for intensity calculation. The procedure consists of two core concepts. The first is ascribing the PES features to their corresponding molecular orbitals with the help of density functional calculations. The second is a background subtraction algorithm. With this procedure, we obtained the oscillating behavior for individual features (A and B), which is by and large consistent with the predictions based on the spherical symmetric approximation although C 70 has the ellipsoidal shape. Owing to the solid state effect, the oscillating amplitudes of the A/B intensity ratios are smaller than those of gas phase C 70 , but an orbital shift reported recently was not observed on our sample. The oscillating curve of a deeper feature, which consists of both σ and π states, are also reported.

  18. Valence band states in Si-based p-type delta-doped field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J C; Vlaev, Stoyan J, E-mail: jcmover@correo.unam.m [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, Calzada Solidaridad esquina con Paseo la Bufa S/N, C.P. 98060, Zacatecas, Zac. (Mexico)

    2009-05-01

    We present tight-binding calculations of the hole level structure of delta-doped Field Effect Transistor in a Si matrix within the first neighbors sp{sup 3}s* semi-empirical tight-binding model including spin. We employ analytical expressions for Schottky barrier potential and the p-type delta-doped well based on a Thomas-Fermi approximation, we consider these potentials as external ones, so in the computations they are added to the diagonal terms of the tight-binding Hamiltonian, by this way we have the possibility to study the energy levels behavior as we vary the backbone parameters in the system: the two-dimensional impurity density (p{sub 2d}) of the p-type delta-doped well and the contact voltage (V{sub c}). The aim of this calculation is to demonstrate that the tight-binding approximation is suitable for device characterization that permits us to propose optimal values for the input parameters involved in the device design.

  19. Explaining the effect of event valence on unrealistic optimism.

    Science.gov (United States)

    Gold, Ron S; Brown, Mark G

    2009-05-01

    People typically exhibit 'unrealistic optimism' (UO): they believe they have a lower chance of experiencing negative events and a higher chance of experiencing positive events than does the average person. UO has been found to be greater for negative than positive events. This 'valence effect' has been explained in terms of motivational processes. An alternative explanation is provided by the 'numerosity model', which views the valence effect simply as a by-product of a tendency for likelihood estimates pertaining to the average member of a group to increase with the size of the group. Predictions made by the numerosity model were tested in two studies. In each, UO for a single event was assessed. In Study 1 (n = 115 students), valence was manipulated by framing the event either negatively or positively, and participants estimated their own likelihood and that of the average student at their university. In Study 2 (n = 139 students), valence was again manipulated and participants again estimated their own likelihood; additionally, group size was manipulated by having participants estimate the likelihood of the average student in a small, medium-sized, or large group. In each study, the valence effect was found, but was due to an effect on estimates of own likelihood, not the average person's likelihood. In Study 2, valence did not interact with group size. The findings contradict the numerosity model, but are in accord with the motivational explanation. Implications for health education are discussed.

  20. Valence, arousal and cognitive control: A voluntary task switching study

    Directory of Open Access Journals (Sweden)

    Jelle eDemanet

    2011-11-01

    Full Text Available The present study focused on the interplay between arousal, valence and cognitive control. To this end, we investigated how arousal and valence associated with affective stimuli influenced cognitive flexibility when switching between tasks voluntarily. Three hypotheses were tested. First, a valence hypothesis that states that the positive valence of affective stimuli will facilitate both global and task-switching performance because of increased cognitive flexibility. Second, an arousal hypothesis that states that arousal, and not valence, will specifically impair task-switching performance by strengthening the previously executed task-set. Third, an attention hypothesis that states that both cognitive and emotional control ask for limited attentional resources, and predicts that arousal will impair both global and task-switching performance. The results showed that arousal affected task-switching but not global performance, possibly by phasic modulations of the noradrenergic system that reinforces the previously executed task. In addition, positive valence only affected global performance but not task-switching performance, possibly by phasic modulations of dopamine that stimulates the general ability to perform in a multitasking environment.

  1. Emotional valence and the free-energy principle.

    Science.gov (United States)

    Joffily, Mateus; Coricelli, Giorgio

    2013-01-01

    The free-energy principle has recently been proposed as a unified Bayesian account of perception, learning and action. Despite the inextricable link between emotion and cognition, emotion has not yet been formulated under this framework. A core concept that permeates many perspectives on emotion is valence, which broadly refers to the positive and negative character of emotion or some of its aspects. In the present paper, we propose a definition of emotional valence in terms of the negative rate of change of free-energy over time. If the second time-derivative of free-energy is taken into account, the dynamics of basic forms of emotion such as happiness, unhappiness, hope, fear, disappointment and relief can be explained. In this formulation, an important function of emotional valence turns out to regulate the learning rate of the causes of sensory inputs. When sensations increasingly violate the agent's expectations, valence is negative and increases the learning rate. Conversely, when sensations increasingly fulfil the agent's expectations, valence is positive and decreases the learning rate. This dynamic interaction between emotional valence and learning rate highlights the crucial role played by emotions in biological agents' adaptation to unexpected changes in their world.

  2. Emotional valence and the free-energy principle.

    Directory of Open Access Journals (Sweden)

    Mateus Joffily

    Full Text Available The free-energy principle has recently been proposed as a unified Bayesian account of perception, learning and action. Despite the inextricable link between emotion and cognition, emotion has not yet been formulated under this framework. A core concept that permeates many perspectives on emotion is valence, which broadly refers to the positive and negative character of emotion or some of its aspects. In the present paper, we propose a definition of emotional valence in terms of the negative rate of change of free-energy over time. If the second time-derivative of free-energy is taken into account, the dynamics of basic forms of emotion such as happiness, unhappiness, hope, fear, disappointment and relief can be explained. In this formulation, an important function of emotional valence turns out to regulate the learning rate of the causes of sensory inputs. When sensations increasingly violate the agent's expectations, valence is negative and increases the learning rate. Conversely, when sensations increasingly fulfil the agent's expectations, valence is positive and decreases the learning rate. This dynamic interaction between emotional valence and learning rate highlights the crucial role played by emotions in biological agents' adaptation to unexpected changes in their world.

  3. Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Paul M., E-mail: paul.dietrich@yahoo.de [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Glamsch, Stephan [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Ehlert, Christopher [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam (Germany); Lippitz, Andreas [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Kulak, Nora [Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Unger, Wolfgang E.S. [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany)

    2016-02-15

    Graphical abstract: - Highlights: • A synchrotron-based XPS method to analyze ultra-thin silane films is presented. • Specification and quantification of organic next to inorganic silicon is demonstrated. • Non-destructive chemical depth profiles of the silane monolayers were obtained. - Abstract: The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z{sub 95} of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) – inorganic (SiO{sub 2}/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS.

  4. Versatile technique for assessing thickness of 2D layered materials by XPS

    Science.gov (United States)

    Zemlyanov, Dmitry Y.; Jespersen, Michael; Zakharov, Dmitry N.; Hu, Jianjun; Paul, Rajib; Kumar, Anurag; Pacley, Shanee; Glavin, Nicholas; Saenz, David; Smith, Kyle C.; Fisher, Timothy S.; Voevodin, Andrey A.

    2018-03-01

    X-ray photoelectron spectroscopy (XPS) has been utilized as a versatile method for thickness characterization of various two-dimensional (2D) films. Accurate thickness can be measured simultaneously while acquiring XPS data for chemical characterization of 2D films having thickness up to approximately 10 nm. For validating the developed technique, thicknesses of few-layer graphene (FLG), MoS2 and amorphous boron nitride (a-BN) layer, produced by microwave plasma chemical vapor deposition (MPCVD), plasma enhanced chemical vapor deposition (PECVD), and pulsed laser deposition (PLD) respectively, were accurately measured. The intensity ratio between photoemission peaks recorded for the films (C 1s, Mo 3d, B 1s) and the substrates (Cu 2p, Al 2p, Si 2p) is the primary input parameter for thickness calculation, in addition to the atomic densities of the substrate and the film, and the corresponding electron attenuation length (EAL). The XPS data was used with a proposed model for thickness calculations, which was verified by cross-sectional transmission electron microscope (TEM) measurement of thickness for all the films. The XPS method determines thickness values averaged over an analysis area which is orders of magnitude larger than the typical area in cross-sectional TEM imaging, hence provides an advanced approach for thickness measurement over large areas of 2D materials. The study confirms that the versatile XPS method allows rapid and reliable assessment of the 2D material thickness and this method can facilitate in tailoring growth conditions for producing very thin 2D materials effectively over a large area. Furthermore, the XPS measurement for a typical 2D material is non-destructive and does not require special sample preparation. Therefore, after XPS analysis, exactly the same sample can undergo further processing or utilization.

  5. Valence effects on adsorption: a preliminary assessment of the effects on valence state control on sorption measurements

    International Nuclear Information System (INIS)

    Meyer, R.E.; Arnold, W.D.; Case, F.; Shiao, S.Y.; Palmer, D.A.

    1983-01-01

    Electrochemical arguments are advanced to illustrate that what is usually measured in practice is a mixed potential determined by the kinetics of the electrode processes occurring at the indicator electrode. Valence states can be altered electrochemically or by use of added chemical reagents, including redox couples which can hold the potential to relatively specific potentials. The disadvantage of added chemical reagents is that they may alter the characteristics of the sorption reactions by interaction with the sorbent. Electrochemical methods are versatile and do not add reagents, but in some caes the nuclide can adsorb on the electrode itself. A description is given of the application of the electrochemical method of valence control to determination of sorption of Np(V) on alumina. Valence state control and analysis can be used to study possible redox reactions on materials which might be used as backfill materials. A description is given of survey experiments with a number of sulfides and iron-containing materials. Valence state analysis is used on the initial solutions and leachate from acid leaches of the sorbent after the sorption experiment to help determine whether valence state change is occurring. The preliminary results indicate that on the sulfides tested, sorption occurs both with and without valence state change

  6. Evaluation of band alignment of α-Ga2O3/α-(Al x Ga1‑ x )2O3 heterostructures by X-ray photoelectron spectroscopy

    Science.gov (United States)

    Uchida, Takayuki; Jinno, Riena; Takemoto, Shu; Kaneko, Kentaro; Fujita, Shizuo

    2018-04-01

    The band alignment at an α-Ga2O3/α-(Al x Ga1‑ x )2O3 heterointerface, with different Al compositions (x), grown on a c-plane sapphire substrate was evaluated by X-ray photoelectron spectroscopy. The experimental results show that the heterointerface has the type-I band discontinuity with the valence band offsets of 0.090, 0.12, and 0.14 eV, and the conduction band offsets of 0.34, 0.79, and 1.87 eV, for x values of 0.1, 0.4, and 0.8, respectively. The small band offset for the valence band is attributed to the fact that the valence band of oxides is constituted by the localized O 2p level, which is dominated by the nature of oxygen atoms. The type-I band discontinuity is desirable for a variety of heterostructure devices.

  7. Electrical properties and band structures of Pb1-x Snx Te alloys

    International Nuclear Information System (INIS)

    Ocio, Miguel

    1972-01-01

    Both p type alloys Pb 0.72 Sn 0.28 Te and Pb 0.53 Sn 0.47 Te have been studied in the present work. The main obtained results are the following: the materials have a two-valence band structure, the first band following non-parabolic Cohen's dispersion law; at low temperatures, carriers are scattered by ionized impurities; the Coulomb potentials being screened almost completely, impurities act like neutral centers. At room temperature, scattering by acoustic modes can explain lattice mobility behavior; reversing of the thermo-power, for samples with carrier densities of about 10 20 cm -3 , is possibly due to inter-band scattering between both valence bands; a very simple picture of the band parameters variations as a function of alloy fraction is suggested. (author) [fr

  8. Surface functional group characterization using chemical derivatization X-ray photoelectron spectroscopy (CD-XPS)

    Energy Technology Data Exchange (ETDEWEB)

    Jagst, Eda

    2011-03-18

    Chemical derivatization - X-ray photolectron spectroscopy (CD-XPS) was applied successfully in order to determine different functional groups on thin film surfaces. Different amino group carrying surfaces, prepared by spin coating, self-assembly and plasma polymerization, were successfully investigated by (XPS) and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. Amino groups were derivatized with the widely used primary amino group tags, pentafluorobenzaldehyde (PFB) and 4-(trifluoromethyl)-benzaldehyde (TFBA), prior to analysis. Primary amino group quantification was then carried out according to the spectroscopical data. Self-assembled monolayers (SAMs) of different terminal groups were prepared and investigated with XPS and spectra were compared with reference surfaces. An angle resolved NEXAFS measurement was applied to determine the orientation of SAMs. Plasma polymerized allylamine samples with different duty cycle, power and pressure values were prepared in order to study the effects of external plasma parameters on the primary amino group retention. CD-XPS was used to quantify the amino groups and experiments show, that the milder plasma conditions promote the retention of amino groups originating from the allylamine monomer. An interlaboratory comparison of OH group determination on plasma surfaces of polypropylene treated with oxygen plasma, was studied. The surfaces were investigated with XPS and the [OH] amount on the surfaces was calculated. (orig.)

  9. XPS and bioactivity study of the bisphosphonate pamidronate adsorbed onto plasma sprayed hydroxyapatite coatings

    International Nuclear Information System (INIS)

    McLeod, Kate; Kumar, Sunil; Smart, Roger St.C.; Dutta, Naba; Voelcker, Nicolas H.; Anderson, Gail I.; Sekel, Ron

    2006-01-01

    This paper reports the use of X-ray photoelectron spectroscopy (XPS) to investigate bisphosphonate (BP) adsorption onto plasma sprayed hydroxyapatite (HA) coatings commonly used for orthopaedic implants. BPs exhibit high binding affinity for the calcium present in HA and hence can be adsorbed onto HA-coated implants to exploit their beneficial properties for improved bone growth at the implant interface. A rigorous XPS analysis of pamidronate, a commonly used nitrogenous BP, adsorbed onto plasma sprayed HA-coated cobalt-chromium substrates has been carried out, aimed at: (a) confirming the adsorption of this BP onto HA; (b) studying the BP diffusion profile in the HA coating by employing the technique of XPS depth profiling; (c) confirming the bioactivity of the adsorbed BP. XPS spectra of plasma sprayed HA-coated discs exposed to a 10 mM aqueous BP solution (pamidronate) for periods of 1, 2 and 24 h showed nitrogen and phosphorous photoelectron signals corresponding to the BP, confirming its adsorption onto the HA substrate. XPS depth profiling of the 2 h BP-exposed HA discs showed penetration of the BP into the HA matrix to depths of at least 260 nm. The bioactivity of the adsorbed BP was confirmed by the observed inhibition of osteoclast (bone resorbing) cell activity. In comparison to the HA sample, the HA sample with adsorbed BP exhibited a 25-fold decrease in primary osteoclast cells

  10. Round robin: Quantitative lateral resolution of PHI XPS microprobes Quantum 2000/Quantera SXM

    International Nuclear Information System (INIS)

    Scheithauer, Uwe; Kolb, Max; Kip, Gerard A.M.; Naburgh, Emile; Snijders, J.H.M.

    2016-01-01

    Highlights: • The quantitative lateral resolution of 7 PHI XPS microprobes has been estimated in a round robin. • An ellipsoidally shaped quartz crystal monochromatizes the Alkα radiation and refocuses it from the Al anode to the sample surface. • The long tail contributions of the X-ray beam intensity distribution were measured using a new and innovative approach. • This quantitative lateral resolution has a significantly larger value than the nominal X-ray beam diameter. • The quantitative lateral resolution follows a trend in time: The newer the monochromator so much the better the quantitative lateral resolution. - Abstract: The quantitative lateral resolution is a reliable measure for the quality of an XPS microprobe equipped with a focused X-ray beam. It describes the long tail contributions of the X-ray beam intensity distribution. The knowledge of these long tail contributions is essential when judging on the origin of signals of XPS spectra recorded on small-sized features. In this round robin test the quantitative lateral resolution of 7 PHI XPS microprobes has been estimated. As expected, the quantitative lateral resolution has significantly larger values than the nominal X-ray beam diameter. The estimated values of the quantitative lateral resolution follow a trend in time: the newer the monochromator of an XPS microprobe so much the better the quantitative lateral resolution.

  11. Round robin: Quantitative lateral resolution of PHI XPS microprobes Quantum 2000/Quantera SXM

    Energy Technology Data Exchange (ETDEWEB)

    Scheithauer, Uwe, E-mail: scht.uhg@googlemail.com [82008 Unterhaching (Germany); Kolb, Max, E-mail: max.kolb@airbus.com [Airbus Group Innovations, TX2, 81663 Munich (Germany); Kip, Gerard A.M., E-mail: G.A.M.Kip@utwente.nl [Universiteit Twente, MESA+ Nanolab, Postbus 217, 7500AE Enschede (Netherlands); Naburgh, Emile, E-mail: e.p.naburgh@philips.com [Materials Analysis, Philips Innovation Services, High Tech Campus 11, 5656 AE Eindhoven (Netherlands); Snijders, J.H.M., E-mail: j.h.m.snijders@philips.com [Materials Analysis, Philips Innovation Services, High Tech Campus 11, 5656 AE Eindhoven (Netherlands)

    2016-07-15

    Highlights: • The quantitative lateral resolution of 7 PHI XPS microprobes has been estimated in a round robin. • An ellipsoidally shaped quartz crystal monochromatizes the Alkα radiation and refocuses it from the Al anode to the sample surface. • The long tail contributions of the X-ray beam intensity distribution were measured using a new and innovative approach. • This quantitative lateral resolution has a significantly larger value than the nominal X-ray beam diameter. • The quantitative lateral resolution follows a trend in time: The newer the monochromator so much the better the quantitative lateral resolution. - Abstract: The quantitative lateral resolution is a reliable measure for the quality of an XPS microprobe equipped with a focused X-ray beam. It describes the long tail contributions of the X-ray beam intensity distribution. The knowledge of these long tail contributions is essential when judging on the origin of signals of XPS spectra recorded on small-sized features. In this round robin test the quantitative lateral resolution of 7 PHI XPS microprobes has been estimated. As expected, the quantitative lateral resolution has significantly larger values than the nominal X-ray beam diameter. The estimated values of the quantitative lateral resolution follow a trend in time: the newer the monochromator of an XPS microprobe so much the better the quantitative lateral resolution.

  12. Observation of the c-f hybridization effect in valence-transition system EuPtP

    Energy Technology Data Exchange (ETDEWEB)

    Anzai, Hiroaki; Ichiki, Katsuya [Graduate School of Engineering, Osaka Prefecture University, Sakai (Japan); Schwier, Eike F.; Iwasawa, Hideaki; Arita, Masashi; Sato, Hitoshi; Shimada, Kenya; Namatame, Hirofumi; Taniguchi, Masaki [Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima (Japan); Mitsuda, Akihiro; Wada, Hirofumi [Graduate School of Science, Kyushu University, Fukuoka (Japan); Mimura, Kojiro [Graduate School of Engineering, Osaka Prefecture University, Sakai (Japan); Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima (Japan)

    2017-06-15

    We study the electronic structure of EuPtP, which exhibits two first-order valence transitions at T{sub 1} = 247 K and T{sub 2} = 201 K, using angle-resolved photoemission spectroscopy. Below T{sub 2}, we observe an energy gap at the crossing point of the bulk Eu 4f and conduction bands. The shape of band dispersions is described by a hybridization-band picture based on the periodic Anderson model. Our results demonstrate the c-f hybridization effect in the low-temperature phase of EuPtP. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Study of band terminating in the A {approx_equal} 100 by EUROGAM; Recherche de terminaisons de bandes dans la region A {approx_equal} 100 avec EUROGAM

    Energy Technology Data Exchange (ETDEWEB)

    Gizon, J.; Gizon, A.; Genevey, J.; Santos, D. [Inst. des Sciences Nucleaires, Grenoble-1 Univ., 38 (France); Nyako, B.M.; Timar, J.; Zolnai, L. [Institute of Nuclear Research, Debrecen (Hungary); Boston, A.J.; Zoss, D.T.; Paul, E.S.; Semple, A.T. [Oliver Lodge Laboratory, University of Liverpool, Liverpool (United Kingdom); O`Brien, N.J.; Parry, C.M. [Department of Physics, University of York, Heslington, York (United Kingdom); Cata-Danil, Gh.; Bucurescu, D. [Horia Hulubei Institute of Physics and Nuclear Engineering, Bucharest (Romania); Afanasjev, A.V.; Ragnarsson, I. [Department of Mathematical Physics, University of Lund, Lund (Sweden)

    1997-12-31

    Terminating bands in nuclei in the A{approx_equal} 100 region have been investigated using the EUROGAM2 array. Results have been obtained for Pd (Z 46) and Rh (Z = 45) isotopes. In the nucleus {sup 102}Pd, eight terminating configurations are identified. It is the first nucleus where terminating bands built on the valence space configurations and on core excited configurations are observed. Terminating bands have been also found in {sup 103}Pd and {sup 102}Rh. For {sup 102}Rh it is the first case of band terminations identified in a doubly-odd nucleus below the Z = 50 shell closure. (authors) 9 refs., 2 figs.

  14. Structural study and electronic band structure investigations of the solid solution Na xCu1-xIn5S8 and its impact on the Cu(In,Ga)Se2/In2S3 interface of solar cells

    International Nuclear Information System (INIS)

    Lafond, A.; Guillot-Deudon, C.; Harel, S.; Mokrani, A.; Barreau, N.; Gall, S.; Kessler, J.

    2007-01-01

    The present work reports investigations on the new In 2 S 3 containing Cu and/or Na compounds, which are expected to be formed at the Cu(In,Ga)Se 2 /In 2 S 3 interface. The knowledge of these materials properties is very important in order to better understand the operation of the devices based on these junction partners. It has been observed that a solid solution Na x Cu 1-x In 5 S 8 exists from CuIn 5 S 8 (x = 0) to NaIn 5 S 8 (x = 1) with a spinel-like structure. The single crystal structure determination shows that indium, copper and sodium atoms are statistically distributed on the tetrahedral sites. XPS investigations on the CuIn 5 S 8 , Na 0.5 Cu 0.5 In 5 S 8 and NaIn 5 S 8 compounds combined with the band gap changes reported in a previous work show that these variations are mainly due to valence band maximum shift; it is moved downward when x increases from 0 to 1. These observations are confirmed by the electron structure calculations based on the density functional theory, which additionally demonstrate that the pure sodium compound has direct gap whereas the copper-containing compounds have indirect gaps

  15. Congenital Constriction Band Syndrome

    OpenAIRE

    Rajesh Gupta, Fareed Malik, Rishabh Gupta, M.A.Basit, Dara Singh

    2008-01-01

    Congenital constriction bands are anomalous bands that encircle a digit or an extremity. Congenitalconstriction band syndrome is rare condition and is mostly associated with other musculoskeletaldisorders.We report such a rare experience.

  16. Direct formation of a polyamide on Ag(111): Joint XPS and STM studies

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Martin; Steinrueck, Hans-Peter; Gottfried, J. Michael [Lehrstuhl fuer Physikalische Chemie II, Universitaet Erlangen-Nuernberg (Germany); Schmitz, Christoph H.; Ikonomov, Julian; Sokolowski, Moritz [Institut fuer Physikalische und Theoretische Chemie, Universitaet Bonn (Germany)

    2011-07-01

    The polymer poly(p-phenylene terephthalamide) (PPTA) was synthesized on Ag(111) by co-adsorption of the reactive monomer compounds terephthaloyl chloride (TPC) and p-phenylenediamine (PPD) at 300 K. The resulting adsorbate phases were characterised by photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). A detailed study of the chemical composition and morphology revealed a complex reaction mechanism, by which the formation of amide bonds leads to folded PPTA polymer chains. According to XPS, the chloride of the TPC precursor is not released as HCl as in the bulk reaction, but remains on the surface as chemisorbed Cl or AgCl. Further temperature-programmed XPS studies of pure TPC on Ag(111) reveal that the molecule decomposes already above 130 K, forming chemisorbed Cl (or AgCl) and a phenylene-dicarbonyl species, which is presumably stabilized by the substrate. The adsorbed chlorine partially desorbs above 800 K as molecular AgCl.

  17. XPS characterization of surface and interfacial structure of sputtered TiNi films on Si substrate

    International Nuclear Information System (INIS)

    Fu Yongqing; Du Hejun; Zhang, Sam; Huang Weimin

    2005-01-01

    TiNi films were prepared by co-sputtering TiNi and Ti targets. X-ray photoelectron spectroscopy (XPS) was employed to study surface chemistry of the films and interfacial structure of Si/TiNi system. Exposure of the TiNi film to the ambient atmosphere (23 deg. C and 80% relatively humidity) facilitated quick adsorption of oxygen and carbon on the surface. With time, carbon and oxygen content increased drastically at the surface, while oxygen diffused further into the layer. After a year, carbon content at the surface became as high as 65.57% and Ni dropped below the detection limit of XPS. Depth profiling revealed that significant inter-diffusion occurred between TiNi film and Si substrate with a layer of 90-100 nm. The detailed bond changes of different elements with depth were obtained using XPS and the formation of titanium silicides at the interface were identified

  18. XPS and NEXAFS analysis of dimethyl sulfide adsorbed on the Rh(PVP) nanoparticle surface

    International Nuclear Information System (INIS)

    Niwa, Hironori; Ogawa, Satoshi; Yagi, Shinya; Kutluk, Galif

    2010-01-01

    We have studied the adsorption reaction of dimethyl sulfide (DMS: (CH 3 ) 2 S) on the surface of Rh(PVP) nanoparticles by using AFM, XPS and NEXAFS techniques. The AFM images show the degree of dispersion of the Rh(PVP) nanoparticles depends on the amount of them. The in-situ XPS results indicate that the dissociation reaction of DMS into atomic S does not depend upon the existence of the Rh(PVP) nanoparticles. The NEXAFS results show that there is a strong chemical bonding between Rh(PVP) nanoparticle and atomic S. The ex-situ XPS results show the atomic S adsorbed on the Rh(PVP) nanoparticles partially desorb by exposing to the air. (author)

  19. Upgrade of the Surface Spectrometer at NEPOMUC for PAES, XPS and STM Investigations

    Science.gov (United States)

    Zimnik, S.; Lippert, F.; Hugenschmidt, C.

    2014-04-01

    The characterization of the elemental composition of surfaces is of great importance for the understanding of many surface processes, such as surface segregation or oxidation. Positron-annihilation-induced Auger Electron Spectroscopy (PAES) is a powerful technique for gathering information about the elemental composition of only the topmost atomic layer of a sample. The upgraded surface spectrometer at NEPOMUC (NEtron induced POsitron source MUniCh) enables a comprehensive surface analysis with the complementary techniques STM, XPS and PAES. A new X-ray source for X-ray induced photoelectron spectroscopy (XPS) was installed to gather additional information on oxidation states. A new scanning tunneling microscope (STM) is used as a complementary method to investigate with atomic resolution the surface electron density. The combination of PAES, XPS and STM allows the characterization of both the elemental composition, and the surface topology.

  20. Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui

    2017-01-01

    Highlights: • Composite TiAlO rather than TiO_2-Al_2O_3 laminations is deposited on 4H-SiC by PEALD. • An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC. • TiAlO offers competitive barrier heights (>1 eV) for both electrons and holes. - Abstract: Intermixing of TiO_2 with Al_2O_3 to form TiAlO films on 4H-SiC is expected to simultaneously boost the dielectric constant and achieve sufficient conduction/valence band offsets (CBO/VBO) between dielectrics and 4H-SiC. In this work, a composite TiAlO film rather than TiO_2-Al_2O_3 laminations is deposited on 4H-SiC by plasma enhanced atomic layer deposition (PEALD). X-ray photoelectron spectroscopy (XPS) is performed to systematically analyze the interfacial chemistry and energy band alignment between TiAlO and 4H-SiC. An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC during PEALD process. The VBO and CBO between TiAlO and 4H-SiC are determined to be 1.45 eV and 1.10 eV, respectively, which offer competitive barrier heights (>1 eV) for both electrons and holes and make it suitable for the fabrication of 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

  1. Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Zheng, Li, E-mail: zhengli@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ye, Peiyi; Li, Menglu [Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095 (United States); Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

    2017-07-01

    Highlights: • Composite TiAlO rather than TiO{sub 2}-Al{sub 2}O{sub 3} laminations is deposited on 4H-SiC by PEALD. • An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC. • TiAlO offers competitive barrier heights (>1 eV) for both electrons and holes. - Abstract: Intermixing of TiO{sub 2} with Al{sub 2}O{sub 3} to form TiAlO films on 4H-SiC is expected to simultaneously boost the dielectric constant and achieve sufficient conduction/valence band offsets (CBO/VBO) between dielectrics and 4H-SiC. In this work, a composite TiAlO film rather than TiO{sub 2}-Al{sub 2}O{sub 3} laminations is deposited on 4H-SiC by plasma enhanced atomic layer deposition (PEALD). X-ray photoelectron spectroscopy (XPS) is performed to systematically analyze the interfacial chemistry and energy band alignment between TiAlO and 4H-SiC. An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC during PEALD process. The VBO and CBO between TiAlO and 4H-SiC are determined to be 1.45 eV and 1.10 eV, respectively, which offer competitive barrier heights (>1 eV) for both electrons and holes and make it suitable for the fabrication of 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

  2. Effects of valence and divided attention on cognitive reappraisal processes.

    Science.gov (United States)

    Morris, John A; Leclerc, Christina M; Kensinger, Elizabeth A

    2014-12-01

    Numerous studies have investigated the neural substrates supporting cognitive reappraisal, identifying the importance of cognitive control processes implemented by prefrontal cortex (PFC). This study examined how valence and attention affect the processes used for cognitive reappraisal by asking participants to passively view or to cognitively reappraise positive and negative images with full or divided attention. When participants simply viewed these images, results revealed few effects of valence or attention. However, when participants engaged in reappraisal, there was a robust effect of valence, with the reappraisal of negative relative to positive images associated with more widespread activation, including within regions of medial and lateral PFC. There also was an effect of attention, with more lateral PFC recruitment when regulating with full attention and more medial PFC recruitment when regulating with divided attention. Within two regions of medial PFC and one region of ventrolateral PFC, there was an interaction between valence and attention: in these regions, divided attention reduced activity during reappraisal of positive but not negative images. Critically, participants continued to report reappraisal success even during the Divided Attention condition. These results suggest multiple routes to successful cognitive reappraisal, depending upon image valence and the availability of attentional resources. © The Author (2014). Published by Oxford University Press. For Permissions, please email: journals.permissions@oup.com.

  3. The acoustic correlates of valence depend on emotion family.

    Science.gov (United States)

    Belyk, Michel; Brown, Steven

    2014-07-01

    The voice expresses a wide range of emotions through modulations of acoustic parameters such as frequency and amplitude. Although the acoustics of individual emotions are well understood, attempts to describe the acoustic correlates of broad emotional categories such as valence have yielded mixed results. In the present study, we analyzed the acoustics of emotional valence for different families of emotion. We divided emotional vocalizations into "motivational," "moral," and "aesthetic" families as defined by the OCC (Ortony, Clore, and Collins) model of emotion. Subjects viewed emotional scenarios and were cued to vocalize congruent exclamations in response to them, for example, "Yay!" and "Damn!". Positive valence was weakly associated with high-pitched and loud vocalizations. However, valence interacted with emotion family for both pitch and amplitude. A general acoustic code for valence does not hold across families of emotion, whereas family-specific codes provide a more accurate description of vocal emotions. These findings are consolidated into a set of "rules of expression" relating vocal dimensions to emotion dimensions. Copyright © 2014 The Voice Foundation. Published by Mosby, Inc. All rights reserved.

  4. Space-Valence Priming with Subliminal and Supraliminal Words

    Directory of Open Access Journals (Sweden)

    Ulrich eAnsorge

    2013-02-01

    Full Text Available To date it is unclear whether (1 awareness-independent non-evaluative semantic processes influence affective semantics and whether (2 awareness-independent affective semantics influence non-evaluative semantic processing. In the current study, we investigated these questions with the help of subliminal (masked primes and visible targets in a space-valence across-category congruence effect. In line with (1, we found that subliminal space prime words influenced valence classification of supraliminal target words (Experiment 1: Classifications were faster with a congruent prime (e.g., the prime ‘up’ before the target ‘happy’ than with an incongruent prime (e.g., the prime ‘up’ before the target ‘sad’. In contrast to (2, no influence of subliminal valence primes on the classification of supraliminal space targets into up- and down-words was found (Experiment 2. Control conditions showed that standard masked response-priming effects were found with both subliminal prime types, and that an across-category congruence effect was also found with supraliminal valence primes and spatial target words. The final Experiment 3 confirmed that the across-category congruence effect indeed reflected priming of target categorization of a relevant meaning category. Together, the data jointly confirmed prediction (1 that awareness-independent non-evaluative semantic priming influences valence judgments.

  5. Effects of valence and divided attention on cognitive reappraisal processes

    Science.gov (United States)

    Leclerc, Christina M.; Kensinger, Elizabeth A.

    2014-01-01

    Numerous studies have investigated the neural substrates supporting cognitive reappraisal, identifying the importance of cognitive control processes implemented by prefrontal cortex (PFC). This study examined how valence and attention affect the processes used for cognitive reappraisal by asking participants to passively view or to cognitively reappraise positive and negative images with full or divided attention. When participants simply viewed these images, results revealed few effects of valence or attention. However, when participants engaged in reappraisal, there was a robust effect of valence, with the reappraisal of negative relative to positive images associated with more widespread activation, including within regions of medial and lateral PFC. There also was an effect of attention, with more lateral PFC recruitment when regulating with full attention and more medial PFC recruitment when regulating with divided attention. Within two regions of medial PFC and one region of ventrolateral PFC, there was an interaction between valence and attention: in these regions, divided attention reduced activity during reappraisal of positive but not negative images. Critically, participants continued to report reappraisal success even during the Divided Attention condition. These results suggest multiple routes to successful cognitive reappraisal, depending upon image valence and the availability of attentional resources. PMID:24493837

  6. Social learning modulates the lateralization of emotional valence.

    Science.gov (United States)

    Shamay-Tsoory, Simone G; Lavidor, Michal; Aharon-Peretz, Judith

    2008-08-01

    Although neuropsychological studies of lateralization of emotion have emphasized valence (positive vs. negative) or type (basic vs. complex) dimensions, the interaction between the two dimensions has yet to be elucidated. The purpose of the current study was to test the hypothesis that recognition of basic emotions is processed preferentially by the right prefrontal cortex (PFC), whereas recognition of complex social emotions is processed preferentially by the left PFC. Experiment 1 assessed the ability of healthy controls and patients with right and left PFC lesions to recognize basic and complex emotions. Experiment 2 modeled the patient's data of Experiment 1 on healthy participants under lateralized displays of the emotional stimuli. Both experiments support the Type as well as the Valence Hypotheses. However, our findings indicate that the Valence Hypothesis holds for basic but less so for complex emotions. It is suggested that, since social learning overrules the basic preference of valence in the hemispheres, the processing of complex emotions in the hemispheres is less affected by valence.

  7. Dimensionality and its effects upon the valence electronic structure of ordered metallic systems

    International Nuclear Information System (INIS)

    Tobin, J.G.

    1983-07-01

    The system c(10x2)Ag/Cu(001) was investigated with Angle-Resolved Photoemission (ARP), Low Energy Electron Diffraction (LEED) and Auger Electron Spectroscopy (AES). LEED and AES provided the calibration of a quartz microbalance used to measure the amount of silver evaporated onto the copper single crystal and also established the monolayer geometrical structure at one monolayer exposure. An off-normal ARP bandmapping study performed with polarized HeI and NeI radiation demonstrated the electronically two-dimensional nature of the silver d-bands at coverages of near one monolayer. The states at the surface Brillouin Zone center were assigned upon the basis of their polarization dependences and a structural model of hexagonal symmetry. A normal emission ARP experiment was performed at the Stanford Synchrotron Radiation Laboratory (SSRL) over the photon energy range of 6 to 32 eV. Data from it documented the evolution of the valence electronic structure of the silver overlayer from a two-dimensional hexagonal valence to a three-dimensional behavior converging towards that of bulk Ag(111). A structural study was attempted using the ARP technique of Normal Emission Photoelectron Diffraction over the photon energy range of 3.4 to 3.7 keV at SSRL, the results of which are inconclusive

  8. Universality class of non-Fermi liquid behaviour in mixed valence systems

    International Nuclear Information System (INIS)

    Zhang Guangming; Su Zhaobin; Lu Yu

    1995-11-01

    A generalized Anderson single-impurity model with off-site Coulomb interactions is derived from the extended three-band Hubbard model, originally proposed to describe the physics of the copper-oxides. Using the abelian bosonization technique and canonical transformations, an effective Hamiltonian is derived in the strong coupling limit, which is essentially analogous to the Toulouse limit of the ordinary Kondo problem. In this limit, the effective Hamiltonian can be exactly solved, with a mixed valence quantum critical point separating two different Fermi liquid phases, i.e. the Kondo phase and the empty orbital phase. In the mixed valence quantum critical regime, the local moment is only partially quenched and X-ray edge singularities are generated. Around the quantum critical point, a new type of non-Fermi liquid behaviour is predicted with an extra specific heat C imp ∼ T 1/4 and a singular spin-susceptibility χ imp ∼ T -3/4 . At the same time, the effective Hamiltonian under single occupancy is transformed into a resonant-level model, from which the correct Kondo physical properties (specific heat, spin susceptibility, and an enhanced Wilson ratio) are easily rederived. Finally, a brief discussion is given to relate these theoretical results to observations in U Pd x Cu 5-x (x=1, 1.5) alloys, which show single-impurity critical behaviour consistent with our predictions. (author). 30 refs

  9. Universality class of non-Fermi-liquid behavior in mixed-valence systems

    Science.gov (United States)

    Zhang, Guang-Ming; Su, Zhao-Bin; Yu, Lu

    1996-01-01

    A generalized Anderson single-impurity model with off-site Coulomb interactions is derived from the extended three-band Hubbard model, originally proposed to describe the physics of the copper oxides. Using the Abelian bosonization technique and canonical transformations, an effective Hamiltonian is derived in the strong-coupling limit, which is essentially analogous to the Toulouse limit of the ordinary Kondo problem. In this limit, the effective Hamiltonian can be exactly solved, with a mixed-valence quantum critical point separating two different Fermi-liquid phases, i.e., the Kondo phase and the empty orbital phase. In the mixed-valence quantum critical regime, the local moment is only partially quenched and x-ray edge singularities are generated. Around the quantum critical point, a type of non-Fermi-liquid behavior is predicted with an extra specific heat Cimp~T1/4 and a singular spin susceptibility χimp~T-3/4. At the same time, the effective Hamiltonian under single occupancy is transformed into a resonant-level model, from which the correct Kondo physical properties (specific heat, spin susceptibility, and an enhanced Wilson ratio) are easily rederived. Finally, a brief discussion is given to relate these theoretical results to observations in UPdxCu5-x (x=1,1.5) alloys, which show single-impurity critical behavior consistent with our predictions.

  10. XPS studies of ceramics with pyrochlore structure for radioactive wastes disposal

    International Nuclear Information System (INIS)

    Teterin, Yu.A.; Vukchevich, L.; Ivanov, K.E.; Utkin, I.O; Teterin, A. Yu.; Maslakov, K.I.; Yudintseva, T.S.; Yudintsev, S.V.; Stefanovsky, S.V.; Lapina, M.I. . E-mail address of corresponding author: vukas@rc.pmf.cg.ac.yu; Vukchevich, L.)

    2005-01-01

    X-ray photoelectron spectroscopy (XPS) study of ceramics CaThSn 2 O 7 and CaThZr 2 O 7 with pyrochlore structure used as matrixes for the disposal of long lived high level radioactive wastes was done. On the basis of the XPS parameters of the core and outer electrons in the binding energy range 0 - 1000 eV the oxidation states of the included metals were determined, quantitative elemental and ionic analysis was carried out and a conclusion on the monophaseness of the studied samples was drawn. The obtained data agree with the X-ray diffraction and scanning electron microscopy results. (author)

  11. Quantitative analysis of satellite structures in XPS spectra of gold and silver

    Energy Technology Data Exchange (ETDEWEB)

    Pauly, N., E-mail: nipauly@ulb.ac.be [Université libre de Bruxelles, Service de Métrologie Nucléaire (CP 165/84), 50 av. F. D. Roosevelt, B-1050 Brussels (Belgium); Yubero, F. [Instituto de Ciencia de Materiales de Sevilla, Univ. Sevilla – CSIC, av. Américo Vespucio 49, E-41092 Sevilla (Spain); Tougaard, S. [Department of Physics, Chemistry and Pharmacy, University of Southern Denmark, DK-5230 Odense M (Denmark)

    2016-10-15

    Highlights: • Accurate determination of the energy loss functions for Au and Ag. • Calculation of effective inelastic electron scattering cross sections for Au and Ag. • Convolution of these cross sections with varying model primary spectra F(E). • Variation of F(E) until a good agreement with experimental XPS spectra is reached. • Quantitative determination of Au 4f and Ag 3d characteristics. - Abstract: Identification of specific chemical states and local electronic environments at surfaces by X-ray photoelectron spectroscopy (XPS) is often difficult because it is not straightforward to quantitatively interpret the shape and intensity of shake-up structures that originate from the photoexcitation process. Indeed the shape and intensity of measured XPS structures are strongly affected by both extrinsic excitations due to electron transport out of the surface and intrinsic excitations induced by the sudden creation of the static core hole. These processes must be taken into account to quantitatively extract, from experimental XPS, the primary excitation spectrum of the considered transition which includes all effects that are part of the initial photo-excitation process, i.e. lifetime broadening, spin–orbit coupling, and multiplet splitting. It was previously shown [N. Pauly, S. Tougaard, F. Yubero, Surf. Sci. 620 (2014) 17] that both extrinsic and intrinsic excitations could be included in an effective energy-differential inelastic electron scattering cross section for XPS which is then convoluted with the primary excitation spectrum to model the full XPS spectrum. This method can thus be applied to determine the primary excitation spectrum from any XPS spectrum. We use this approach in the present paper to determine the Au 4f and Ag 3d photoemission spectra from pure metals. We observe that characteristic energy loss features of the XPS spectra are not only due to photoelectron energy losses. We thus prove the existence of a double shake-up process

  12. A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures.

    Science.gov (United States)

    Ganesan, K; Ghosh, Subrata; Gopala Krishna, Nanda; Ilango, S; Kamruddin, M; Tyagi, A K

    2016-08-10

    Defects in planar and vertically oriented nanographitic structures (NGSs) synthesized by plasma enhanced chemical vapor deposition (PECVD) have been investigated using Raman and X-ray photoelectron spectroscopy. While Raman spectra reveal the dominance of vacancy and boundary type defects respectively in vertical and planar NGSs, XPS provides additional information on vacancy related defect peaks in the C 1s spectrum, which originate from non-conjugated carbon atoms in the hexagonal lattice. Although an excellent correlation prevails between these two techniques, our results show that estimation of surface defects by XPS is more accurate than Raman analysis. Nuances of these techniques are discussed in the context of assessing defects in nanographitic structures.

  13. XPS and SEM studies of chromium oxide films chemically formed on stainless steel 316 L

    International Nuclear Information System (INIS)

    Stefanov, P.; Marinova, T.

    2000-01-01

    The structure and composition of chromium oxide films formed on stainless steel by immersion in a chromium electrolyte have been studied by SEM and XPS. Cr 2 O 3 crystallites in the range 30-150 nm are fully developed and cover the whole surface. The chemical composition in the depth and the thickness of the oxide layer have been determined by XPS sputter profiles. The oxide film can be described within the framework of a double layer consisting of a thin outer hydrated layer and an inner layer of Cr 2 O 3 . (orig.)

  14. Investigating early stages of biocorrosion with XPS: AISI 304 stainless steel exposed to Burkholderia species

    Science.gov (United States)

    Johansson, Leena-Sisko; Saastamoinen, Tuomas

    1999-04-01

    We have investigated the interactions of an exopolymer-producing bacteria, Burkholderia sp. with polished AISI 304 stainless steel substrates using X-ray photoelectron spectroscopy (XPS). Steel coupons were exposed to the pure bacteria culture in a specially designed flowcell for 6 h during which the experiment was monitored in situ with an optical microscope. XPS results verified the formation of biofilm containing extracellular polymer on all the samples exposed to bacteria. Sputter results indicated that some ions needed for metabolic processes were trapped within the biofilm. Changes in the relative Fe concentration and Fe 2p peak shape indicated that also iron had accumulated into the biofilm.

  15. Research on the surface chemical behavior of uranium metal in hydrogen atmosphere by XPS

    International Nuclear Information System (INIS)

    Fu Xiaoguo; Wang Xiaolin; Yu Yong; Zhao Zhengping

    2001-01-01

    The surface chemical behavior clean uranium metal in hydrogen atmosphere at 100 and 200 degree C is studied by X-ray photoelectron spectroscopy (XPS), respectively. It leads to hydriding reaction when the hydrogen exposure is 12.0 Pa·s, and the U4f 7/2 binding energy of UH 3 is found to be 378.7 eV. The higher temperature (200 degree C) is beneficial to UH 3 formation at the same hydrogen exposures. XPS elemental depth profiles indicate that the distribution of uranium surface layer is UO 2 , UH 3 and U after exposure to 174.2 Pa·s hydrogen

  16. Conversion electron Moessbauer and XPS study on the effect of polishing of a stainless steel sample

    International Nuclear Information System (INIS)

    Vertes, Cs.; Kuzmann, E.; Lakatos-Varsanyi, M.; Vertes, A.; Vass, G.; Romhanyi, K.

    1994-01-01

    Conversion electron Moessbauer spectroscopy (CEMS) and XPS has been used for the surface analysis of an 'X10CrNiTi 18/9 (DIN 1.7440)'-type stainless steel in order to determine the supposed structural and/or chemical changes in the surface layer caused by polishing. Both, CEMS and XPS results can be associated with the appearance of Fe nitride in the outer layer of steel samples after polishing, while no sing of nitrogen was detected in the bulk material. (author) 9 refs.; 3 figs.; 1 tab

  17. Thorough XPS analyses on overlithiated manganese spinel cycled around the 3V plateau

    Energy Technology Data Exchange (ETDEWEB)

    Grissa, R. [IPREM ECP − UMR CNRS 5254, Université de Pau et des Pays de l’Adour, Hélioparc Pau-Pyrénées, 2 Avenue du Président Angot, 64053 Pau Cedex 9 (France); Martinez, H., E-mail: herve.martinez@univ-pau.fr [IPREM ECP − UMR CNRS 5254, Université de Pau et des Pays de l’Adour, Hélioparc Pau-Pyrénées, 2 Avenue du Président Angot, 64053 Pau Cedex 9 (France); Cotte, S.; Galipaud, J.; Pecquenard, B. [CNRS, Université de Bordeaux, ICMCB–UPR 9048 and Bordeaux INP, 87 Avenue du Dr. Schweitzer, F-33600 Pessac (France); Cras, F.Le [CEA LETI, 17 rue des Martyrs, F-38054 Grenoble (France); Université Grenoble Alpes, F-38000 Grenoble (France)

    2017-07-31

    Highlights: • Mn2p XPS spectra of Li{sub 1+x}Mn{sub 2-x}O{sub 4} (0 < x < 0.25) fitted with reference samples. • XPS Mn mean oxidation states agrees with XRD structural study. • Li{sub 1.2}Mn{sub 1.8}O{sub 4} thin films cycled versus lithium arounds 3 V in liquid electrolyte. • Electrochemical results (over 20 cycles) related to Mn oxidation states evolution. • Irreversible capacity explained on the basis of XPS by active material delamination. - Abstract: Lithium-rich spinel Li{sub 1.2}Mn{sub 1.8}O{sub 4} thin film electrodes operated at 3 V/Li{sup +}/Li are studied by means of X-ray photoelectron spectroscopy (XPS), mainly on the basis of the evolution of the Mn2p XPS peak during the electrode cycling. The analysis of this core peak has long been debated in literature given its complex character. Based on manganese oxide references, MnO (Mn{sup 2+}), Mn{sub 2}O{sub 3}(Mn{sup 3+}) and Li{sub 2}MnO{sub 3}(Mn{sup 4+}), we propose a deconvolution method to identify each Mn oxidation state. This method is then used for the deconvolution of Mn2p XPS peaks of bulk lithium-rich spinels Li{sub 1+x}Mn{sub 2-x}O{sub 4} (0 ≤ x ≤ 0.25) for validation before proceeding to the study of cycled Li{sub 1.2}Mn{sub 1.8}O{sub 4} thin film electrodes. Electrochemical measurements exhibit significant capacity loss during the first cycle. Based on XPS analyses, this phenomenon could be explained by mechanical breakup of parts of the electrode. A stable behavior during subsequent cycles is then observed. The presence of Mn{sup 2+} species (XPS) at the most top surface of the electrode and the significant polarization observed during the discharge illustrate the kinetical limitation of the two-phase reaction, despite the reduced thickness of the electrode material.

  18. Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te

    Directory of Open Access Journals (Sweden)

    Huazheng Sun

    2017-09-01

    Full Text Available Monolayer metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te form a new class of two-dimensional semiconductors with indirect band gaps, and their band alignment information is investigated via first principles calculations. The dependence of band gap, valence-band maximum, conduction band minimum, and charge transfer on the M or X element has been obtained and can be understood from the orbital analysis of the band edges. Potential applications of metal monochalcogenides to design van der Waals heterostructures and catalyse the photo-splitting reaction of water have been discussed.

  19. Wavelet-based study of valence-arousal model of emotions on EEG signals with LabVIEW.

    Science.gov (United States)

    Guzel Aydin, Seda; Kaya, Turgay; Guler, Hasan

    2016-06-01

    This paper illustrates the wavelet-based feature extraction for emotion assessment using electroencephalogram (EEG) signal through graphical coding design. Two-dimensional (valence-arousal) emotion model was studied. Different emotions (happy, joy, melancholy, and disgust) were studied for assessment. These emotions were stimulated by video clips. EEG signals obtained from four subjects were decomposed into five frequency bands (gamma, beta, alpha, theta, and delta) using "db5" wavelet function. Relative features were calculated to obtain further information. Impact of the emotions according to valence value was observed to be optimal on power spectral density of gamma band. The main objective of this work is not only to investigate the influence of the emotions on different frequency bands but also to overcome the difficulties in the text-based program. This work offers an alternative approach for emotion evaluation through EEG processing. There are a number of methods for emotion recognition such as wavelet transform-based, Fourier transform-based, and Hilbert-Huang transform-based methods. However, the majority of these methods have been applied with the text-based programming languages. In this study, we proposed and implemented an experimental feature extraction with graphics-based language, which provides great convenience in bioelectrical signal processing.

  20. Contribution to the study of higher valency states of americium

    International Nuclear Information System (INIS)

    Langlet, Jean.

    1976-01-01

    Study of the chemistry of the higher valencies of americium in aqueous solutions and especially the autoreduction phenomenon. First a purification method of americium solutions is studied by precipitation, solvent extraction and ion exchange chromatography. Studies of higher valency states chemical properties are disturbed by the autoreduction phenomenon changing Am VI and Am V in Am III more stable. Stabilization of higher valency states, characterized by a steady concentration of Am VI in solution, can be done by complexation of Am VI and Am V ions or by a protecting effect of foreign ions. The original medium used has a complexing effect by SO 4 2- ions and a protecting effect by the system S 2 O 8 2- -Ag + consuming H 2 O 2 main reducing agent produced by water radiolysis. These effects are shown by the study of Am VI in acid and basic solutions. A mechanism of the stabilization effect is given [fr

  1. Valence-to-core-detected X-ray absorption spectroscopy

    DEFF Research Database (Denmark)

    Hall, Eleanor R.; Pollock, Christopher J.; Bendix, Jesper

    2014-01-01

    X-ray absorption spectroscopy (XAS) can provide detailed insight into the electronic and geometric structures of transition-metal active sites in metalloproteins and chemical catalysts. However, standard XAS spectra inherently represent an average contribution from the entire coordination...... environment with limited ligand selectivity. To address this limitation, we have investigated the enhancement of XAS features using valence-to-core (VtC)-detected XAS, whereby XAS spectra are measured by monitoring fluorescence from valence-to-core X-ray emission (VtC XES) events. VtC emission corresponds...... to transitions from filled ligand orbitals to the metal 1s core hole, with distinct energetic shifts for ligands of differing ionization potentials. VtC-detected XAS data were obtained from multiple valence emission features for a series of well-characterized Mn model compounds; taken together, these data...

  2. Conduction Mechanism of Valence Change Resistive Switching Memory: A Survey

    Directory of Open Access Journals (Sweden)

    Ee Wah Lim

    2015-09-01

    Full Text Available Resistive switching effect in transition metal oxide (TMO based material is often associated with the valence change mechanism (VCM. Typical modeling of valence change resistive switching memory consists of three closely related phenomena, i.e., conductive filament (CF geometry evolution, conduction mechanism and temperature dynamic evolution. It is widely agreed that the electrochemical reduction-oxidation (redox process and oxygen vacancies migration plays an essential role in the CF forming and rupture process. However, the conduction mechanism of resistive switching memory varies considerably depending on the material used in the dielectric layer and selection of electrodes. Among the popular observations are the Poole-Frenkel emission, Schottky emission, space-charge-limited conduction (SCLC, trap-assisted tunneling (TAT and hopping conduction. In this article, we will conduct a survey on several published valence change resistive switching memories with a particular interest in the I-V characteristic and the corresponding conduction mechanism.

  3. RKKY interaction in mixed valence system and heavy fermion superconductivity

    International Nuclear Information System (INIS)

    Fusui Liu; Gao Lin; Lin Zonghan

    1985-11-01

    The 1-D RKKY interaction of mixed valence system is given by using the thermodynamic perturbation theory. The numerical comparisons of 1-D and 3-D RKKY interaction between systems with localized magnetic moments of mixed valence and non-mixed valence show that the former is much stronger than the latter. From some analyses we propose that the heavy Fermion superconductivity comes from the RKKY interaction between two local f electrons which hop off the impurity site to become two continuum electrons. The source of the two impurity electrons hopping is the Coulomb interaction. It is also emphasized that the RKKY interaction does not disappear for the Kondo lattice, when the temperature is less than the Kondo temperature. (author)

  4. Direct double photoionization of the valence shell of Be

    International Nuclear Information System (INIS)

    Citrini, F.; Malegat, L.; Selles, P.; Kazansky, A.K.

    2003-01-01

    The hyperspherical R-matrix method with semiclassical outgoing waves is used to study the direct double photoionization (DPI) of the valence shell of the lightest alkaline earth-metal Be. The absolute fully integrated, singly, doubly, and triply differential cross sections obtained are compared with the single set of measurements available and with recent calculations based on the convergent close coupling and time-dependent close coupling methods. The level of agreement between all these data is very encouraging. A comparison is also made between the DPI of He and the direct DPI of the valence shell of Be. It confirms that the electron-electron correlations are stronger in the valence 2s shell of Be than in the 1s shell of He, thus contributing to a desirable clarification

  5. Field-induced valence transition in rare-earth system

    International Nuclear Information System (INIS)

    Chattopadhaya, A.; Ghatak, S.K.

    2000-01-01

    The magnetic field-induced valence transition in rare-earth compound has been examined based on a pseudospin S=1 Ising model proposed earlier for valence transition. The model includes finite mixing between two pertinent ionic configurations (magnetic and non-magnetic) separated by an energy gap and with intersite interaction between rare-earth ions. Using the mean field approximation the magnetic behaviour and the critical field (H c ) for transition are obtained as a function of energy gap and temperature. The phase boundary defined in terms of reduced field H c /H co and reduced temperature T/T v (T v being valence transition temperature in absence of field) is nearly independent of energy gap. These results are in qualitative agreement with experimental observation in Yb- and Eu-compounds

  6. A facilitative effect of negative affective valence on working memory.

    Science.gov (United States)

    Gotoh, Fumiko; Kikuchi, Tadashi; Olofsson, Ulrich

    2010-06-01

    Previous studies have shown that negatively valenced information impaired working memory performance due to an attention-capturing effect. The present study examined whether negative valence could also facilitate working memory. Affective words (negative, neutral, positive) were used as retro-cues in a working memory task that required participants to remember colors at different spatial locations on a computer screen. Following the cue, a target detection task was used to either shift attention to a different location or keep attention at the same location as the retro-cue. Finally, participants were required to discriminate the cued color from a set of distractors. It was found that negative cues yielded shorter response times (RTs) in the attention-shift condition and longer RTs in the attention-stay condition, compared with neutral and positive cues. The results suggest that negative affective valence may enhance working memory performance (RTs), provided that attention can be disengaged.

  7. A theoretical investigation of valence and Rydberg electronic states of acrolein

    International Nuclear Information System (INIS)

    Aquilante, Francesco; Barone, Vincenzo; Roos, Bjoern O.

    2003-01-01

    The main features of the ultraviolet spectrum of acrolein have been studied by a multireference perturbative treatment and by a time dependent density functional approach. The valence and Rydberg transition energies have been calculated and the assignment of the experimental bands has been clarified. The different relaxation trends of the three lowest singlet and triplet excited states have been analyzed by unconstrained geometry optimizations. This has allowed, in particular, the characterization of a twisted 3 (ππ*) state, which is crucial for the interesting photophysics and photochemistry of the acrolein molecule and, more generally, of the α,β-enones. Solvatochromic shifts in aqueous solution have been investigated using a combined discrete/continuum approach based on the so called polarizable continuum model. The experimental trends are well reproduced by this approach and a closer degeneracy in the triplet manifold has been detected in solution with respect to gas phase

  8. Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain

    International Nuclear Information System (INIS)

    Peng Xihong; Tang Fu; Logan, Paul

    2011-01-01

    Strain modulated electronic properties of Si/Ge core-shell nanowires along the [110] direction were reported, on the basis of first principles density-functional theory calculations. In particular, the energy dispersion relationship of the conduction/valence band was explored in detail. At the Γ point, the energy levels of both bands are significantly altered by applied uniaxial strain, which results in an evident change of the band gap. In contrast, for the K vectors far away from Γ, the variation of the conduction/valence band with strain is much reduced. In addition, with a sufficient tensile strain (∼1%), the valence band edge shifts away from Γ, which indicates that the band gap of the Si/Ge core-shell nanowires experiences a transition from direct to indirect. Our studies further showed that effective masses of charge carriers can also be tuned using the external uniaxial strain. The effective mass of the hole increases dramatically with tensile strain, while strain shows a minimal effect on tuning the effective mass of the electron. Finally, the relation between strain and the conduction/valence band edge is discussed thoroughly in terms of site-projected wavefunction characters.

  9. Electronic band structure of magnetic bilayer graphene superlattices

    International Nuclear Information System (INIS)

    Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

    2014-01-01

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  10. Valence QCD: Connecting QCD to the quark model

    International Nuclear Information System (INIS)

    Liu, K.F.; Dong, S.J.; Draper, T.; Sloan, J.; Leinweber, D.; Woloshyn, R.M.

    1999-01-01

    A valence QCD theory is developed to study the valence quark properties of hadrons. To keep only the valence degrees of freedom, the pair creation through the Z graphs is deleted in the connected insertions, whereas the sea quarks are eliminated in the disconnected insertions. This is achieved with a new 'valence QCD' Lagrangian where the action in the time direction is modified so that the particle and antiparticle decouple. It is shown in this valence version of QCD that the ratios of isovector to isoscalar matrix elements (e.g., F A /D A and F S /D S ratios) in the nucleon reproduce the SU(6) quark model predictions in a lattice QCD calculation. We also consider how the hadron masses are affected on the lattice and discover new insights into the origin of dynamical mass generation. It is found that, within statistical errors, the nucleon and the Δ become degenerate for the quark masses we have studied (ranging from 1 to 4 times the strange mass). The π and ρ become nearly degenerate in this range. It is shown that valence QCD has the C, P, T symmetries. The lattice version is reflection positive. It also has the vector and axial symmetries. The latter leads to a modified partially conserved axial Ward identity. As a result, the theory has a U(2N F ) symmetry in the particle-antiparticle space. Through lattice simulation, it appears that this is dynamically broken down to U q (N F )xU bar q (N F ). Furthermore, the lattice simulation reveals spin degeneracy in the hadron masses and various matrix elements. This leads to an approximate U q (2N F )xU bar q (2N F ) symmetry which is the basis for the valence quark model. In addition, we find that the masses of N, Δ,ρ,π,a 1 , and a 0 all drop precipitously compared to their counterparts in the quenched QCD calculation. This is interpreted as due to the disappearance of the 'constituent' quark mass which is dynamically generated through tadpole diagrams. The origin of the hyperfine splitting in the baryon is

  11. Spin Dynamics and Magnetic Ordering in Mixed Valence Systems

    DEFF Research Database (Denmark)

    Shapiro, S. M.; Bjerrum Møller, Hans; Axe, J. D.

    1978-01-01

    . 0 meV at the transition to the alpha phase. The temperature independence of the susceptibility within the gamma phase cannot be simply reconciled with the temperature dependence of the valence within the gamma phase. TmSe is shown to order in a type I antiferromagnetic structure below T//N similar 3....... 2 K. The magnetic phase diagram is understood as a successive domain reorientation and a metamagnetic phase transition for T less than 3 K with increasing field. The mixed valence nature manifests itself in a reduced moment and a markedly altered crystal field. Another sample of TmSe with a lattice...

  12. Determination of band offsets at strained NiO and MgO heterojunction for MgO as an interlayer in heterojunction light emitting diode applications

    Energy Technology Data Exchange (ETDEWEB)

    Singh, S.D., E-mail: devsh@rrcat.gov.in [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Nand, Mangla [Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085 (India); Ajimsha, R.S.; Upadhyay, Anuj; Kamparath, Rajiv; Mukherjee, C.; Misra, P.; Sinha, A.K. [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Jha, S.N. [Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085 (India); Ganguli, Tapas [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)

    2016-12-15

    Highlights: • Valence band offset at NiO/MgO heterojunction is experimentally determined. • Experimentally determined value of 2.3 ± 0.4 eV is significantly larger than the predicted from theoretical calculations. • The value of valence band offset is in corroboration with that estimated from the band transitivity model. • Our result can be used to predict accurately carrier transport and electroluminescence mechanisms for heterojunction LEDs. - Abstract: Valence band offset of 2.3 ± 0.4 eV at strained NiO/MgO heterojunction is determined from photoelectron spectroscopy (PES) measurements. The determined value of valence band offset is larger than that is predicted from first principle calculations, but is in corroboration with that obtained from band transitivity rule. Our PES result indicates a larger value of the valence band offset at strained NiO/MgO heterojunction and can be used to predict accurately carrier transport and electroluminescence mechanisms for n-ZnO/MgO/p-NiO and p-NiO/MgO/n-GaN heterojunction light emitting diodes.

  13. Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron

    Directory of Open Access Journals (Sweden)

    Hong-Sub Lee

    2015-01-01

    Full Text Available Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a La0.7Sr0.3MnO3 (LSMO oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

  14. XPS study of the passive layers formed on lead in aqueous nitrate solutions

    International Nuclear Information System (INIS)

    Uchida, Miho; Okuwaki, Akitsugu

    1997-01-01

    The analysis of the lead surface immersed in aqueous nitrate solutions by X-ray photoelectron spectroscopy (XPS) shows the formation of passive oxide layer containing nitrogen compound. The oxide layer formed on the lead surface in aqueous ammonium nitrate solution was hydrolyzed and cracked. (author)

  15. Quantitative depth profiling of K-doped fullerene films using XPS and SIMS

    Czech Academy of Sciences Publication Activity Database

    Oswald, S.; Janda, Pavel; Dunsch, L.

    2003-01-01

    Roč. 141, 1-2 (2003), s. 79-85 E-ISSN 1436-5073 Institutional research plan: CEZ:AV0Z4040901 Keywords : XPS * SIMS * depth profiling * fullerenes * doping Subject RIV: CG - Electrochemistry Impact factor: 0.784, year: 2003

  16. PLA-PMMA blends: A study by XPS and ToF-SIMS

    International Nuclear Information System (INIS)

    Cossement, D.; Gouttebaron, R.; Cornet, V.; Viville, P.; Hecq, M.; Lazzaroni, R.

    2006-01-01

    This paper reports which are the possibilities of quantification by time of flight secondary ion mass spectrometry (ToF-SIMS) for some polymer blends. In order to assess the composition of the mixtures, we studied first different poly(L-lactide)/polymethylmethacrylate (PLA/PMMA) blends by X-ray photoelectron spectroscopy (XPS), this technique being quantitative. By XPS fitting of the C 1s level, we found a very good agreement of the measured concentrations with the initial compositions. Concerning ToF-SIMS data treatment, we used principal component analysis (PCA) on negative spectra allowing to discriminate one polymer from the other one. By partial least square regression (PLS), we found also a good agreement between the ToF-SIMS predicted and initial compositions. This shows that ToF-SIMS, in a similar way to XPS, can lead to quantitative results. In addition, the observed agreement between XPS (60-100 A depth analyzed) and ToF-SIMS (10 A depth analyzed) measurements show that there is no segregation of one of the two polymers onto the surface

  17. Diamond/carbon nanotube composites: Raman, FTIR and XPS spectroscopic studies

    Czech Academy of Sciences Publication Activity Database

    Varga, Marián; Ižák, Tibor; Vretenár, V.; Kozak, Halyna; Holovský, Jakub; Artemenko, Anna; Hulman, M.; Skákalová, V.; Lee, D. S.; Kromka, Alexander

    2016-01-01

    Roč. 111, Jan (2016), s. 54-61 ISSN 0008-6223 R&D Projects: GA ČR GC15-22102J; GA MŠk(CZ) 7AMB14SK037 Institutional support: RVO:68378271 Keywords : diamond * carbon nanotubes * spectroscopy * Raman * FTIR * XPS Subject RIV: JI - Composite Materials Impact factor: 6.337, year: 2016

  18. Thermal evolution of the band edges of 6H-SiC: X-ray methods compared to the optical band gap

    International Nuclear Information System (INIS)

    Miedema, P.S.; Beye, M.; Könnecke, R.; Schiwietz, G.; Föhlisch, A.

    2014-01-01

    Highlights: • Conduction band minima (CBM) of 6H-SiC are estimated with Si 2p XAS. • Valence band maxima (VBM) of 6H-SiC are estimated with non-resonant Si 2p XES. • Temperature-dependent VBM and CBM of 6H-SiC show asymmetric band gap closing. • XAS, XES and RIXS band gap estimates are compared with the optical band gap. • XAS + XES versus optical band gap provides core-excitonic screening energies. - Abstract: The band gap of semiconductors like silicon and silicon carbide (SiC) is the key for their device properties. In this research, the band gap of 6H-SiC and its temperature dependence were analyzed with silicon 2p X-ray absorption spectroscopy (XAS), X-ray emission spectroscopy (XES) and resonant inelastic X-ray scattering (RIXS) allowing for a separate analysis of the conduction-band minimum (CBM) and valence-band maximum (VBM) components of the band gap. The temperature-dependent asymmetric band gap shrinking of 6H-SiC was determined with a valence-band slope of +2.45 × 10 −4 eV/K and a conduction-band slope of −1.334 × 10 −4 eV/K. The apparent asymmetry, e.g., that two thirds of the band-gap shrinking with increasing temperature is due to the VBM evolution in 6H-SiC, is similar to the asymmetry obtained for pure silicon before. The overall band gap temperature-dependence determined with XAS and non-resonant XES is compared to temperature-dependent optical studies. The core-excitonic binding energy appearing in the Si 2p XAS is extracted as the main difference. In addition, the energy loss of the onset of the first band in RIXS yields to values similar to the optical band gap over the tested temperature range

  19. The complex band structure for armchair graphene nanoribbons

    International Nuclear Information System (INIS)

    Zhang Liu-Jun; Xia Tong-Sheng

    2010-01-01

    Using a tight binding transfer matrix method, we calculate the complex band structure of armchair graphene nanoribbons. The real part of the complex band structure calculated by the transfer matrix method fits well with the bulk band structure calculated by a Hermitian matrix. The complex band structure gives extra information on carrier's decay behaviour. The imaginary loop connects the conduction and valence band, and can profoundly affect the characteristics of nanoscale electronic device made with graphene nanoribbons. In this work, the complex band structure calculation includes not only the first nearest neighbour interaction, but also the effects of edge bond relaxation and the third nearest neighbour interaction. The band gap is classified into three classes. Due to the edge bond relaxation and the third nearest neighbour interaction term, it opens a band gap for N = 3M − 1. The band gap is almost unchanged for N = 3M + 1, but decreased for N = 3M. The maximum imaginary wave vector length provides additional information about the electrical characteristics of graphene nanoribbons, and is also classified into three classes

  20. XPS and electrochemical studies of the dissolution and passivation of molybdenum-implanted austenitic stainless steels

    International Nuclear Information System (INIS)

    De Vito, E.; Marcus, P.

    1993-01-01

    X-ray Photoelectron Spectroscopy (XPS) was used to investigate the chemical composition and the chemical states of the passive film formed on austenitic stainless steels (Fe-19Cr-10Ni (at.%)) which have been implanted with molybdenum (Mo + , 100 keV, 2.5 x 10 16 at./cm 2 ). Prior to passivation the implanted alloy was characterized by RBS (Rutherford Backscattering Spectroscopy) and XPS. Alloys with well-defined surface concentrations of molybdenum were prepared by ion sputtering the implanted alloy in the preparation chamber of the spectrometer, to a fixed point in the implantation profile. The samples were then transferred without air exposure to a glove box with inert gas in which the electrochemical measurements were performed. After passivation, return transfer of the passivated samples was done with the same transfer device to avoid exposure to air. In 0.5 M H 2 SO 4 , the anodic dissolution current density decreases with increasing Mo content on the alloy surface. Surface analysis by XPS showed that the surface is enriched with molybdenum in the Mo 4+ chemical state. The current density in the passive state is similar for both the non-implanted and the implanted alloys. Surface analysis by XPS showed that the passive film has a bilayer structure (inner oxide and outer hydroxide) and that the hydroxide layer present on the surface of the passive film is markedly enriched with molybdenum in the Mo 6+ chemical state. The XPS measurements indicate that the presence of molybdenum favors the formation of chromium hydroxide at the expense of chromium oxide. A significant enrichment of the alloyed (Cr, Ni) and implanted (Mo) elements was also observed in the metallic phase under the passive film. The possible mechanisms of the effect of molybdenum on the corrosion resistance of stainless steels are discussed in light of the obtained surface analytical results

  1. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui

    2015-07-16

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  2. Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

    KAUST Repository

    Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong

    2015-01-01

    The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

  3. Band offset in zinc oxy-sulfide/cubic-tin sulfide interface from X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sanal, K.C.; Nair, P.K.; Nair, M.T.S., E-mail: mtsn@ier.unam.mx

    2017-02-28

    Highlights: • Zinc oxy-sulfide thin films, 175–240 nm, deposited by rf-sputtering from targets of ZnO + ZnS. • Oxygen content in thin films is enhanced 3–4 times compared with that in ZnO:ZnS targets. • Thin film ZnO{sub x}S{sub 1−x} with x = 0.88–0.27 and optical band gap 2.8–3.2 eV is suitable for solar cells. • The conduction band offset with SnS of cubic structure studied by XPS are +0.41 to −0.28 eV. - Abstract: Zinc oxy-sulfide, ZnO{sub x}S{sub 1−x}, has been found to provide better band alignment in thin film solar cells of tin sulfide of orthorhombic crystalline structure. Here we examine ZnO{sub x}S{sub 1−x}/SnS-CUB interface, in which the ZnO{sub x}S{sub 1−x} thin film was deposited by radio frequency (rf) magnetron sputtering on SnS thin film of cubic (CUB) crystalline structure with a band gap (E{sub g}) of 1.72 eV, obtained via chemical deposition. X-ray photoelectron spectroscopy provides the valence band maxima of the materials and hence places the conduction band offset of 0.41 eV for SnS-CUB/ZnO{sub 0.27}S{sub 0.73} and −0.28 eV for SnS-CUB/ZnO{sub 0.88}S{sub 0.12} interfaces. Thin films of ZnO{sub x}S{sub 1−x} with 175–240 nm in thickness were deposited from targets prepared with different ZnO to ZnS molar ratios. With the target of molar ratio of 1:13.4, the thin films are of composition ZnO{sub 0.27}S{sub 0.73} with hexagonal crystalline structure and with that of 1:1.7 ratio, it is ZnO{sub 0.88}S{sub 0.12}. The optical band gap of the ZnO{sub x}S{sub 1−x} thin films varies from 2.90 eV to 3.21 eV as the sulfur to zinc ratio in the film increases from 0.12:1 to 0.73:1 as determined from X-ray diffraction patterns. Thus, band offsets sought for absorber materials and zinc oxy-sulfide in solar cells may be achieved through a choice of ZnO:ZnS ratio in the sputtering target.

  4. Study of band terminating in the A ≅ 100 by EUROGAM

    International Nuclear Information System (INIS)

    Gizon, J.; Gizon, A.; Genevey, J.; Santos, D.; Nyako, B.M.; Timar, J.; Zolnai, L.; Boston, A.J.; Zoss, D.T.; Paul, E.S.; Semple, A.T.; O'Brien, N.J.; Parry, C.M.; Cata-Danil, Gh.; Bucurescu, D.; Afanasjev, A.V.; Ragnarsson, I.

    1997-01-01

    Terminating bands in nuclei in the A≅ 100 region have been investigated using the EUROGAM2 array. Results have been obtained for Pd (Z 46) and Rh (Z = 45) isotopes. In the nucleus 102 Pd, eight terminating configurations are identified. It is the first nucleus where terminating bands built on the valence space configurations and on core excited configurations are observed. Terminating bands have been also found in 103 Pd and 102 Rh. For 102 Rh it is the first case of band terminations identified in a doubly-odd nucleus below the Z = 50 shell closure. (authors)

  5. Energy band alignment at ferroelectric/electrode interface determined by photoelectron spectroscopy

    International Nuclear Information System (INIS)

    Chen Feng; Wu Wen-Bin; Li Shun-Yi; Klein Andreas

    2014-01-01

    The most important interface-related quantities determined by band alignment are the barrier heights for charge transport, given by the Fermi level position at the interface. Taking Pb(Zr,Ti)O 3 (PZT) as a typical ferroelectric material and applying X-ray photoelectron spectroscopy (XPS), we briefly review the interface formation and barrier heights at the interfaces between PZT and electrodes made of various metals or conductive oxides. Polarization dependence of the Schottky barrier height at a ferroelectric/electrode interface is also directly observed using XPS. (topical review - magnetism, magnetic materials, and interdisciplinary research)

  6. Mn valence state and electrode performance of perovskite-type ...

    Indian Academy of Sciences (India)

    increase in the oxidation state of Mn ions was due to the formation of Mn4+ ions and oxygen vacancies. The addition of Cu ions to LSM systems could lead to enhanced electrode performance for oxygen reduction reactions originating from the change in valence of Mn ions. Keywords. Cu-doped LSM; electrical conductivity; ...

  7. Emotional Valence and Arousal Effects on Memory and Hemispheric Asymmetries

    Science.gov (United States)

    Mneimne, Malek; Powers, Alice S.; Walton, Kate E.; Kosson, David S.; Fonda, Samantha; Simonetti, Jessica

    2010-01-01

    This study examined predictions based upon the right hemisphere (RH) model, the valence-arousal model, and a recently proposed integrated model (Killgore & Yurgelun-Todd, 2007) of emotion processing by testing immediate recall and recognition memory for positive, negative, and neutral verbal stimuli among 35 right-handed women. Building upon…

  8. Nuclear masses and the number of valence nucleons

    International Nuclear Information System (INIS)

    Mendoza-Temis, J.; Frank, A.; Hirsch, J.G.; Lopez Vieyra, J.C.; Morales, I.; Barea, J.; Van Isacker, P.; Velazquez, V.

    2008-01-01

    An improved version of the liquid drop model is presented. The addition of two terms, linear and quadratic in the total number of valence nucleons (particles or holes), improves the description of atomic masses, which can be fitted with an r.m.s. error of 1.2 MeV. Predictions are analysed an compared with those of established models

  9. Vection Modulates Emotional Valence of Autobiographical Episodic Memories

    Science.gov (United States)

    Seno, Takeharu; Kawabe, Takahiro; Ito, Hiroyuki; Sunaga, Shoji

    2013-01-01

    We examined whether illusory self-motion perception ("vection") induced by viewing upward and downward grating motion stimuli can alter the emotional valence of recollected autobiographical episodic memories. We found that participants recollected positive episodes more often while perceiving upward vection. However, when we tested a small moving…

  10. Valence mixing in YbCuAl: a case study

    International Nuclear Information System (INIS)

    Mattens, W.

    1980-01-01

    Results are presented of a study of the valence state of Yb in the intermetallic compound YbCuAl. Both macroscopic physical properties (magnetic susceptibility, heat capacity, thermal expansion, electric resistivity) and microscopic physical properties (neutron inelastic scattering, nuclear magnetic resonance) are determined. The results are compared with a local Fermi liquid theory. (G.T.H.)

  11. Effective valence as the control parameter of the superconducting ...

    African Journals Online (AJOL)

    One approach to investigating the superconductivity in the ironbased materials is understanding the chemical and structural parameters that can be used to tune their remarkably high Tc. In this paper, we have demonstrated that the effective valence of iron can be used as the control parameter to tune the Tc of this family of ...

  12. Voice and Valency in San Luis Potosi Huasteco

    Science.gov (United States)

    Munoz Ledo Yanez, Veronica

    2014-01-01

    This thesis presents an analysis of the system of transitivity, voice and valency alternations in Huasteco of San Luis Potosi (Mayan) within a functional-typological framework. The study is based on spoken discourse and elicited data collected in the municipalities of Aquismon and Tancanhuitz de Santos in the state of San Luis Potosi, Mexico. The…

  13. verbal extensions: valency decreasing extensions in the basà ...

    African Journals Online (AJOL)

    Finance

    London: Hodder. Education. Imoh, P.M., 2013. Verbal extensions: Valency increasing operations in Basà verbal system. Paper presented at the West African Languages Congress (WALC) and 26th Annual. Conference of the Linguistic Association of Nigeria (26th CLAN), 29th July to 2nd August. 2013, University of Ibadan, ...

  14. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β -Ga2O3

    Science.gov (United States)

    Mock, Alyssa; Korlacki, Rafał; Briley, Chad; Darakchieva, Vanya; Monemar, Bo; Kumagai, Yoshinao; Goto, Ken; Higashiwaki, Masataka; Schubert, Mathias

    2017-12-01

    We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β -Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75-9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the fundamental direct band-to-band transitions and their polarization selection rules, the electron and hole effective mass parameters for the three lowest band-to-band transitions, and their excitonic contributions. We find that the effective masses for holes are highly anisotropic and correlate with the selection rules for the fundamental band-to-band transitions. The observed transitions are polarized close to the direction of the lowest hole effective mass for the valence band participating in the transition.

  15. Crystal structure and band gap determination of HfO2 thin films

    NARCIS (Netherlands)

    Cheynet, M.C.; Pokrant, S.; Tichelaar, F.D.; Rouvière, J.L.

    2007-01-01

    Valence electron energy loss spectroscopy (VEELS) and high resolution transmission electron microscopy (HRTEM) are performed on three different HfO2 thin films grown on Si (001) by chemical vapor deposition (CVD) or atomic layer deposition (ALD). For each sample the band gap (Eg) is determined by

  16. Dirac Cones, Topological Edge States, and Nontrivial Flat Bands in Two-Dimensional Semiconductors with a Honeycomb Nanogeometry

    Directory of Open Access Journals (Sweden)

    E. Kalesaki

    2014-01-01

    Full Text Available We study theoretically two-dimensional single-crystalline sheets of semiconductors that form a honeycomb lattice with a period below 10 nm. These systems could combine the usual semiconductor properties with Dirac bands. Using atomistic tight-binding calculations, we show that both the atomic lattice and the overall geometry influence the band structure, revealing materials with unusual electronic properties. In rocksalt Pb chalcogenides, the expected Dirac-type features are clouded by a complex band structure. However, in the case of zinc-blende Cd-chalcogenide semiconductors, the honeycomb nanogeometry leads to rich band structures, including, in the conduction band, Dirac cones at two distinct energies and nontrivial flat bands and, in the valence band, topological edge states. These edge states are present in several electronic gaps opened in the valence band by the spin-orbit coupling and the quantum confinement in the honeycomb geometry. The lowest Dirac conduction band has S-orbital character and is equivalent to the π-π^{⋆} band of graphene but with renormalized couplings. The conduction bands higher in energy have no counterpart in graphene; they combine a Dirac cone and flat bands because of their P-orbital character. We show that the width of the Dirac bands varies between tens and hundreds of meV. These systems emerge as remarkable platforms for studying complex electronic phases starting from conventional semiconductors. Recent advancements in colloidal chemistry indicate that these materials can be synthesized from semiconductor nanocrystals.

  17. Bond-Valence Constraints on Liquid Water Structure

    International Nuclear Information System (INIS)

    Bickmore, Barry R.; Rosso, Kevin M.; Brown, I. David; Kerisit, Sebastien N.

    2009-01-01

    The recent controversy about the structure of liquid water pits a new model involving water molecules in relatively stable rings-and-chains structures against the standard model that posits water molecules in distorted tetrahedral coordination. Molecular dynamics (MD) simulations 'both classical and ab initio' almost uniformly support the standard model, but since none of them can yet reproduce all the anomalous properties of water, they leave room for doubt. We argue that it is possible to evaluate these simulations by testing them against their adherence to the bond-valence model, a well known, and quantitatively accurate, empirical summary of the behavior of atoms in the bonded networks of inorganic solids. Here we use the results of ab initio molecular dynamics simulations of ice, water, and several solvated aqueous species to show that the valence sum rule (the first axiom of the bond-valence model,) is followed in both solid and liquid bond networks. We then test MD simulations of water, employing several popular potential models, against this criterion and the experimental O-O radial distribution function. It appears that most of those tested cannot satisfy both criteria well, except TIP4P and TIP5P. If the valence sum rule really can be applied to simulated liquid structures, then it follows that the bonding behaviors of atoms in liquids are in some ways identical to those in solids. We support this interpretation by showing that the simulations produce O-H-O geometries completely consistent with the range of geometries available in solids, and the distributions of instantaneous valence sums reaching the atoms in both the ice and liquid water simulations are essentially identical. Taken together, this is powerful evidence in favor of the standard distorted tetrahedral model of liquid water structure

  18. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Science.gov (United States)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  19. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    International Nuclear Information System (INIS)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-01-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices

  20. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

    2015-06-21

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  1. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  2. XPS and surface resistivity measurements of plasma - treated FEP co-polymer

    International Nuclear Information System (INIS)

    Pitrus, R.K.; Brack, N.; Liesegang, J.; Pigram, P.J.

    2002-01-01

    Full text: Fluorinated polymers such as fluorinated ethylene propylene (FEP) and poly(tetrafluoroethylene) (PTFE) play an important role in many applications due to their many desirable properties such as chemical resistivity, inertness, electrical stability and low dielectric constant; however, one disadvantage of fluorinated polymers is their extreme surface hydrophobicity. Previous studies show that plasma treatment will modify the surface by increasing the surface free energy and also offer a rapid and convenient method for pre-treating the polymers for many purposes. This paper, through resistivity and XPS (x-ray photoelectron spectroscopy) measurements, attempts to discover basic effects of such plasma treatment. Fluorinated ethylene propylene (FEP) co-polymer film of (0.05) mm thickness (obtained commercially) and with the following structure (CF 2 -CF 2 )-(CF(CF 3 )CF 2 )- was used. A suitable cleaning procedure was used to remove adventitious carbon from the surface. XPS has been used to study FEP film properties. The spectra of XPS were analyzed with the main focus on carbon and fluorine as they compose the elemental component of FEP film. A value of 2.05 was obtained for the F/C ratio, which is slightly higher than the theoretical F/C value estimated from the chemical structure of FEP (F/C 2). The clean film was then air plasma treated (pressure 10 -1 torr and power 30W) for various treatment times to produce a higher energy fluoropolymer surface. XPS studies investigated changes to the polymer surface and determined that oxidation occurs on the FEP surface. The oxidation reactions on the FEP surface form oxygen functional groups such as C-O and C=O groups. The results also show that the percentage of CF 2 and CF 3 in the co-polymer surface decreased with exposure time and the percentage of CF, C-C, C-O and C=O increased. There is a sharp decrease in F/C ratio and increase in O/C ratio. In addition to XPS, the resistivity of FEP-film was measured by a

  3. Comparison of the equivalent width, the autocorrelation width, and the variance as figures of merit for XPS narrow scans

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Bhupinder [Department of Chemistry and Biochemistry, C-100 BNSN, Brigham Young University, Provo, UT 84602 (United States); Velázquez, Daniel; Terry, Jeff [Department of Physics, Illinois Institute of Technology, Chicago, IL 60616 (United States); Linford, Matthew R., E-mail: mrlinford@chem.byu.edu [Department of Chemistry and Biochemistry, C-100 BNSN, Brigham Young University, Provo, UT 84602 (United States)

    2014-12-15

    Highlights: • We apply the equivalent and autocorrelation widths and variance to XPS narrow scans. • This approach is complementary to traditional peak fitting methods. • It is bias free and responsive to subtle chemical changes in spectra. • It has the potential for machine interpretation of spectra and quality control. • It has the potential for analysis of complex spectra and tracking charging/artifacts. - Abstract: X-ray photoelectron spectroscopy (XPS) is widely used in surface and materials laboratories around the world. It is a near surface technique, providing detailed chemical information about samples in the form of survey and narrow scans. To extract the maximum amount of information about materials it is often necessary to peak fit XPS narrow scans. And while indispensable to XPS data analysis, even experienced practitioners can struggle with their peak fitting. In our previous publication, we introduced the equivalent width (EW{sub XPS}) as both a possible machine automated method, one that requires less expert judgment for characterizing XPS narrow scans, and as an approach that may be well suited for the analysis of complex spectra. The EW{sub XPS} figure of merit was applied to four different data sets. However, as previously noted, other width functions are also regularly employed for analyzing functions. Here we evaluate two other width functions for XPS narrow scan analysis: the autocorrelation width (AW{sub XPS}) and the variance (σ{sub XPS}{sup 2}). These widths were applied to the same four sets of spectra studied before: (a) four C 1s narrow scans of ozone-treated carbon nanotubes (CNTs) (EW{sub XPS}: ∼2.11–2.16 eV, AW{sub XPS}: ∼3.9–4.1 eV, σ{sub XPS}{sup 2}: ∼5.0–5.2 eV, and a modified form of σ{sub XPS}{sup 2}, denoted σ{sub XPS}{sup 2*}: ∼6.3–6.8 eV), (b) silicon wafers with different oxide thicknesses (EW{sub XPS}: ∼1.5–2.9 eV, AW{sub XPS}: ∼2.28–4.9, and σ{sub XPS}{sup 2}: ∼0.7–4.9 eV), (iii

  4. Approach and withdrawal tendencies during written word processing: effects of task, emotional valence and emotional arousal

    OpenAIRE

    Citron, Francesca Maria Marina; Abugaber, David; Herbert, Cornelia

    2016-01-01

    The affective dimensions of emotional valence and emotional arousal affect processing of verbal and pictorial stimuli. Traditional emotional theories assume a linear relationship between these dimensions, with valence determining the direction of a behaviour (approach vs. withdrawal) and arousal its intensity or strength. In contrast, according to the valence-arousal conflict theory, both dimensions are interactively related: positive valence and low arousal (PL) are associated with an implic...

  5. (001) 3C SiC/Ni contact interface: In situ XPS observation of annealing induced Ni2Si formation and the resulting barrier height changes

    Science.gov (United States)

    Tengeler, Sven; Kaiser, Bernhard; Chaussende, Didier; Jaegermann, Wolfram

    2017-04-01

    The electronic states of the (001) 3C SiC/Ni interface prior and post annealing are investigated via an in situ XPS interface experiment, allowing direct observation of the induced band bending and the transformation from Schottky to ohmic behaviour for the first time. A single domain (001) 3C SiC sample was prepared via wet chemical etching. Nickel was deposited on the sample in multiple in situ deposition steps via RF sputtering, allowing observation of the 3C SiC/Ni interface formation. Over the course of the experiments, an upward band bending of 0.35 eV was observed, along with defect induced Fermi level pinning. This indicates a Schottky type contact behaviour with a barrier height of 0.41 eV. The subsequent annealing at 850 °C for 5 min resulted in the formation of a Ni2Si layer and a reversal of the band bending to 0.06 eV downward. Thus explaining the ohmic contact behaviour frequently reported for annealed n-type 3C SiC/Ni contacts.

  6. Cu(I)/Cu(II) mixed-valence surface complexes of S-[(2-hydroxyamino)-2-oxoethyl]-N,N-dibutyldithiocarbamate: Hydrophobic mechanism to malachite flotation.

    Science.gov (United States)

    Liu, Sheng; Zhong, Hong; Liu, Guangyi; Xu, Zhenghe

    2018-02-15

    Hydroxamate and sulfhydryl surfactants are effective collectors for flotation of copper minerals. The combination application of hydroxamate and sulfhydryl collectors has been proved to be an effective approach for improving the flotation recovery of non-sulfide copper minerals. A surfactant owing both hydroxamate and dithiocarbamate groups might exhibit strong affinity to non-sulfide copper minerals through double sites adsorption, rendering an enhanced hydrophobization to non-sulfide copper minerals flotation. The flotation performance of S-[(2-hydroxyamino)-2-oxoethyl]- N,N-dibutyldithiocarbamate (HABTC) to malachite, calcite and quartz were first evaluated through systematic micro-flotation experiments. HABTC's hydrophobic mechanism to malachite was further investigated and analyzed by zeta potential, Fourier transform infrared spectroscopy (FTIR), time-of-flight secondary ion mass spectrometry (ToF-SIMS) and X-ray photoelectron spectroscopy (XPS). The micro-flotation results demonstrated HABTC was an excellent collector for malachite flotation and exhibited favorable selectivity for flotation separation of malachite from quartz or calcite under pH 8.5-10.3. Zeta potential and FTIR implied that HABTC might bond with the surface copper atoms of malachite, with releasing the H + ions of its hydroxamate group into pulp. ToF-SIMS provided clear evidences that the Cu-hydroxamate and Cu-dithiocarbamate groups were formed on malachite surfaces after HABTC adsorption. XPS revealed that Cu(I)/Cu(II) mixed-valence surface complexes of HABTC anchored on malachite through formation of Cu(I)S and Cu(II)O bonds, accompanying with reduction of partial surface Cu(II) to Cu(I). The Cu(I)/Cu(II) mixed-valence double chelating character and "chair"-shape N,N-dibutyldithiocarbamate hydrophobic group, resulting in an enhanced affinity and hydrophobization of HABTC to malachite flotation. Copyright © 2017 Elsevier Inc. All rights reserved.

  7. Chemical state analysis of conversion coatings by SR-XPS and TEY-XANES

    CERN Document Server

    Noro, H; Nagoshi, M

    2002-01-01

    Chromate coatings on galvanized steel have been studied by Synchrotron Radiation (SR) based techniques that include X-ray Photoelectron Spectroscopy (XPS) and Total-Electron-Yield X-ray Absorption Near Edge Structure (TEY-XANES). Non-destructive depth profiling of the coatings by SR-XPS reveals the enhancement of Cr sup 6 sup + in the outer surface. TEY-XANES spectroscopy based on simple specimen current measurement is demonstrated as an effective technique for analyzing chemical states of conversion coatings on general bulk substrates. The sampling depth of this technique, which exceeds several tens of nanometer, is determined by the penetration length of Auger electrons excited by X-ray and the inelastic mean free path of secondary electrons excited by inelastically scattered Auger electrons. The chemical states of phosphoric acid added chromate coatings are studied using this technique. The phosphoric acid is taken into the chromate coatings as partially changed into zinc and chromium phosphates, and the r...

  8. Detergency of stainless steel surface soiled with human brain homogenate: an XPS study

    Energy Technology Data Exchange (ETDEWEB)

    Richard, M. [Ecole Centrale de Lyon, UMR 5513 LTDS, 69 134 Ecully (France) and Laboratoires ANIOS, 59 260 Lille-Hellemmes (France)]. E-mail: marlene.richard@ec-lyon.fr; Le Mogne, Th. [Ecole Centrale de Lyon, UMR 5513 LTDS, 69 134 Ecully (France); Perret-Liaudet, A. [Hopital Neurologique de Lyon et INSERM U512, 69 394 Lyon (France); Rauwel, G. [Laboratoires ANIOS, 59 260 Lille-Hellemmes (France); Criquelion, J. [Laboratoires ANIOS, 59 260 Lille-Hellemmes (France); De Barros, M.I. [Ecole Centrale de Lyon, UMR 5513 LTDS, 69 134 Ecully (France); Cetre, J.C. [Unite d' Hygiene et d' Epidemiologie, Hopital de la Croix Rousse, 69 317 Lyon (France); Martin, J.M. [Ecole Centrale de Lyon, UMR 5513 LTDS, 69 134 Ecully (France)

    2005-02-15

    In the detergency field of re-usable medical devices, a special attention is focused on the non conventional transmissible agent called prions which is a proteinaceous infectious agent. Few cleaning procedures are effective against prions and few techniques are available to study cleaning effectiveness with respect to proteins in general. In our study, X-ray photoelectron spectroscopy (XPS) has been used to evaluate the effectiveness of detergent formulations to remove proteins from stainless steel surface soiled with a brain homogenate (BH) from human origin. Our results showed that XPS is a reliable surface analysis technique to study chemical species remaining on surface and substrate properties after cleaning procedures. A semi-quantitative evaluation of the detergency effectiveness could also be performed.

  9. SEM and XPS study of layer-by-layer deposited polypyrrole thin films

    Science.gov (United States)

    Pigois-Landureau, E.; Nicolau, Y. F.; Delamar, M.

    1996-01-01

    Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3-4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces.

  10. SEM and XPS study of layer-by-layer deposited polypyrrole thin films

    International Nuclear Information System (INIS)

    Pigois-Landureau, E.; Nicolau, Y.F.; Delamar, M.

    1996-01-01

    Layer-by-layer deposition of thin films (a few nm) of polypyrrole was carried out on various substrates such as silver, platinum, electrochemically oxidized aluminum and pretreated glass. SEM micrographs showed that the deposited layers nucleate by an island-type mechanism on hydrated alumina and KOH-pretreated (hydrophilic) glass before forming a continuous film. However, continuous thin films are obtained on chromic acid pretreated (hydrophobic) glass and sputtered Ag or Pt on glass after only 3 endash 4 deposition cycles. The mean deposition rate evaluated by XPS for the first deposition cycles on Ag and Pt is 3 and 4 nm/cycle, respectively, in agreement with previous gravimetric determinations on thicker films, proving the constancy of the deposition rate. The XPS study of the very thin films obtained by a few deposition cycles shows that the first polypyrrole layers are dedoped by hydroxydic (basic) substrate surfaces. copyright 1996 American Institute of Physics

  11. Detergency of stainless steel surface soiled with human brain homogenate: an XPS study

    International Nuclear Information System (INIS)

    Richard, M.; Le Mogne, Th.; Perret-Liaudet, A.; Rauwel, G.; Criquelion, J.; De Barros, M.I.; Cetre, J.C.; Martin, J.M.

    2005-01-01

    In the detergency field of re-usable medical devices, a special attention is focused on the non conventional transmissible agent called prions which is a proteinaceous infectious agent. Few cleaning procedures are effective against prions and few techniques are available to study cleaning effectiveness with respect to proteins in general. In our study, X-ray photoelectron spectroscopy (XPS) has been used to evaluate the effectiveness of detergent formulations to remove proteins from stainless steel surface soiled with a brain homogenate (BH) from human origin. Our results showed that XPS is a reliable surface analysis technique to study chemical species remaining on surface and substrate properties after cleaning procedures. A semi-quantitative evaluation of the detergency effectiveness could also be performed

  12. Pd adsorption on Si(1 1 3) surface: STM and XPS study

    International Nuclear Information System (INIS)

    Hara, Shinsuke; Yoshimura, Masamichi; Ueda, Kazuyuki

    2008-01-01

    Pd-induced surface structures on Si(1 1 3) have been studied by scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). In the initial process of the Pd adsorption below 0.10 ML, Pd silicide (Pd 2 Si) clusters are observed to form randomly on the surface. By increasing the Pd coverage to 0.10 ML, the clusters cover the entire surface, and an amorphous layer is formed. After annealing the Si(1 1 3)-Pd surface at 600 deg. C, various types of islands and chain protrusions appears. The agglomeration, coalescence and crystallization of these islands are observed by using high temperature (HT-) STM. It is also found by XPS that the islands correspond to Pd 2 Si structure. On the basis of these results, evolution of Pd-induced structures at high temperatures is in detail discussed

  13. Synchrotron radiation as a source for quantitative XPS: advantages and consequences

    International Nuclear Information System (INIS)

    Rosseel, T.M.; Carlson, T.A.; Negri, R.E.; Beall, C.E.; Taylor, J.W.

    1986-01-01

    Synchrotron radiation (SR) has a variety of properties which make it an attractive source for quantitative x-ray photoelectron spectroscopy (XPS). Among the most significant are high intensity and tunability. In addition, the intensity of the dispersed radiation is comparable to laboratory line sources. Synchrotron radiation is also a clean source, i.e., it will not contaminate the sample, because it operates under ultra-high vacuum conditions. We have used these properties to demonstrate the advantages of SR as a source for quantitative XPS. We have also found several consequences associated with this source which can either limit its use or provide unique opportunities for analysis and research. Using the tunability of SR, we have measured the energy dependence of the 3p photoionization cross sections of Ti, Cr, and Mn from 50 to 150 eV above threshold at the University of Wisconsin's Tantalus electron-storage ring

  14. XPS characterization of the anodic oxide film formed on uranium metal in sodium hydroxide solution

    International Nuclear Information System (INIS)

    Fu Xiaoguo; Wang Xiaolin; Guo Huanjun; Wang Qingfu; Zhao Zhengping; Zhong Yongqiang

    2002-01-01

    X-ray photoelectron spectroscopy (XPS) is used to examine the anodic oxide film formed on uranium metal in 0.8 mol/L NaOH solution. The U4f 7/2 fitting spectra suggests that the anodic oxide film is composed of uranium trioxide and a small amount of UO 2+x . Under UHV condition, the U4f peak shifts to the lower binding energy, while a gradual increase in the intensity of U5f peak and the broad of U4f peak are also observed. All of these changes are due to reduction of uranium trioxide in the anodic oxide film. XPS quantitative analysis confirms the occurrence of reduction reaction

  15. Developmental Reversals in False Memory: Effects of Emotional Valence and Arousal

    Science.gov (United States)

    Brainerd, C. J.; Holliday, R. E.; Reyna, V. F.; Yang, Y.; Toglia, M. P.

    2010-01-01

    Do the emotional valence and arousal of events distort children's memories? Do valence and arousal modulate counterintuitive age increases in false memory? We investigated those questions in children, adolescents, and adults using the Cornell/Cortland Emotion Lists, a word list pool that induces false memories and in which valence and arousal can…

  16. Valence-Specific Laterality Effects in Vocal Emotion: Interactions with Stimulus Type, Blocking and Sex

    Science.gov (United States)

    Schepman, Astrid; Rodway, Paul; Geddes, Pauline

    2012-01-01

    Valence-specific laterality effects have been frequently obtained in facial emotion perception but not in vocal emotion perception. We report a dichotic listening study further examining whether valence-specific laterality effects generalise to vocal emotions. Based on previous literature, we tested whether valence-specific laterality effects were…

  17. Work Valence as a Predictor of Academic Achievement in the Family Context

    Science.gov (United States)

    Porfeli, Erik; Ferrari, Lea; Nota, Laura

    2013-01-01

    This study asserts a theoretical model of academic and work socialization within the family setting. The presumed associations between parents' work valences, children's work valences and valence perceptions, and children's academic interest and achievement are tested. The results suggest that children's perceptions of parents mediate the…

  18. Comparison of optical models and signals from XPS and VASE characterized titanium after PBS immersion

    Czech Academy of Sciences Publication Activity Database

    Penttinen, N.; Hasoň, Stanislav; Silvennoinen, M.; Joska, L.; Silvennoinen, R.

    2012-01-01

    Roč. 285, č. 6 (2012), s. 965-968 ISSN 0030-4018 Grant - others:GA ČR(CZ) GAP108/10/1782 Program:GA Institutional research plan: CEZ:AV0Z50040507; CEZ:AV0Z50040702 Keywords : permittivity * XPS titanium * diffractive optical element-based sensor Subject RIV: BO - Biophysics Impact factor: 1.438, year: 2012

  19. XPS investigations on the UV-laser ablation mechanism of poly(ether imide)

    Energy Technology Data Exchange (ETDEWEB)

    Wambach, J; Kunz, T; Schnyder, B; Koetz, R; Wokaun, A [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

    1999-08-01

    UV-Laser ablated samples of poly(ether imide) [Kapton{sup TM}] were studied with small-spot XPS. Applying fluences above the threshold level (0.167 J/cm{sup 2}) resulted in the expected behaviour of a decline of both nitrogen and oxygen. Below the threshold level a hint for an altered ablation mechanism was found. (author) 1 fig., 5 refs.

  20. Study of the local structure of binary surfaces by electron diffraction (XPS, LEED)

    OpenAIRE

    Gereová, Katarína

    2006-01-01

    Study of local structure of binary surface with usage of ultra-thin film of cerium deposited on a Pd (111) single-crystal surface is presented. X-ray photoelectron spectroscopy and diffraction (XPS, XPD), angle resolved UV photoemission spectroscopy (ARUPS) and low energy electron diffraction (LEED) was used for our investigations. LEED and X-ray excited photoemission intensities results represent a surface-geometrical structure. As well, mapping of ultra-violet photoelectron intensities as a...

  1. Investigation of CoPd alloys by XPS and EPES using the pattern recognition method

    Czech Academy of Sciences Publication Activity Database

    Lesiak, B.; Zemek, Josef; Jiříček, Petr; Jozwik, A.

    2007-01-01

    Roč. 428, - (2007), s. 190-196 ISSN 0925-8388 R&D Projects: GA ČR GA202/06/0459 Institutional research plan: CEZ:AV0Z10100521 Keywords : CoPd alloys * x-ray photoelectron spectroscopy (XPS) * elastic peak electron spectroscopy (EPES) * pattern recognition method * fuzzy k-nearest neighbour rule (fkNN) * quantitative analysis * surface segregation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.455, year: 2007

  2. The hidden radiation chemistry in plasma modification and XPS analysis of polymer surfaces

    International Nuclear Information System (INIS)

    George, G.A.; Le, T.T.; Elms, F.M.; Wood, B.J.

    1996-01-01

    Full text: The surface modification of polymers using plasma treatments is being widely researched to achieve changes in the surface energetics and consequent wetting and reactivity for a range of applications. These include i) adhesion for polymer bonding and composite material fabrication and ii) biocompatibility of polymers when used as orthopedic implants, catheters and prosthetics. A low pressure rf plasma produces a variety of species from the introduced gas which may react with the surface of a hydrocarbon polymer, such as polyethylene. In the case of 0 2 and H 2 0, these species include oxygen atoms, singlet molecular oxygen and hydroxyl radicals, all of which may oxidise and, depending on their energy, ablate the polymer surface. In order to better understand the reactive species formed both in and downstream from a plasma and the relative contributions of oxidation and ablation, self-assembled monolayers of n-alkane thiols on gold are being used as well characterised substrates for quantitative X-ray photoelectron spectroscopy (XPS). The identification and quantification of oxidised carbon species on plasma treated polymers from broad, asymmetric XPS signals is difficult, so derivatisation is often used to enhance sensitivity and specificity. For example, trifluoroacetic anhydride (TFAA) selectively labels hydroxyl functionality. The surface analysis of a modified polymer surface may be confounded by high energy radiation chemistry which may occur during XPS analysis. Examples include scission of carbon-halogen bonds (as in TFM adducts), decarboxylation and main-chain polyene formation. The extent of free-radical chemistry occurring in polyethylene while undergoing XPS analysis may be seen by both ESR and FT-IR analysis

  3. Lead-silicate glass surface sputtered by an argon cluster ion beam investigated by XPS

    Czech Academy of Sciences Publication Activity Database

    Zemek, Josef; Jiříček, Petr; Houdková, Jana; Jurek, Karel; Gedeon, O.

    2017-01-01

    Roč. 469, Aug (2017), s. 1-6 ISSN 0022-3093 R&D Projects: GA MŠk LM2015088; GA ČR(CZ) GA15-12580S Institutional support: RVO:68378271 Keywords : lead-silicate glass * XPS * BO * NBO * Argon duster ion beam sputtering * X-ray irradiation Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.124, year: 2016

  4. An XPS study of tarnishing of a gold mask from a pre-Columbian culture

    International Nuclear Information System (INIS)

    Bastidas, D.M.; Cano, E.; Gonzalez, A.G.; Fajardo, S.; Lleras-Perez, R.; Campo-Montero, E.; Belzunce-Varela, F.J.; Bastidas, J.M.

    2008-01-01

    The tarnishing originated on a hammered gold mask was analysed. Red tarnishing was observed after three years of storage in an indoor environment in the Gold Museum of Banco de la Republica, Bogota, Colombia. Silver sulphide (Ag 2 S) and silver sulphate (Ag 2 SO 4 ) compounds were identified as the origin of the tarnishing phenomenon, which is attributed to environmental contamination. Atomic absorption spectroscopy (AAS) and X-ray photoelectron spectroscopy (XPS) techniques were used

  5. Formation of titanium nitride layers on titanium metal: Results of XPS and AES investigations

    International Nuclear Information System (INIS)

    Moers, H.; Pfennig, G.; Klewe-Nebenius, H.; Penzhorn, R.D.; Sirch, M.; Willin, E.

    1988-09-01

    The reaction of titanium metal with gaseous nitrogen and ammonia at temperatures of 890 0 C leads to the formation of nitridic overlayers on the metallic substrate. The thicknesses of the overlayers increase with increasing reaction time. Under comparable conditions ammonia reacts much slower than nitrogen. XPS and AES depth profile analyses show continuous changes of the in-depth compositions of the overlayers. This can be interpreted in terms of a very irregular thickness of the overlayers, an assumption which is substantiated by local AES analyses and by the observation of a pronounced crystalline structure of the substrate after annealing pretreatment, which can give rise to locally different reaction rates. The depth profile is also influenced by the broad ranges of stability of the titanium nitride phases formed during the reaction. The quantitative analysis of the titanium/nitrogen overlayers by AES is difficult because of the overlap of titanium and nitrogen Auger peaks. In quantitative XPS analysis problems arise due to difficulties in defining Ti 2p peak areas. This work presents practical procedures for the quantitative evaluation by XPS and AES of nitridic overlayers with sufficient accuracy. (orig.) [de

  6. Gold/silver core-shell 20 nm nanoparticles extracted from citrate solution examined by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Engelhard, Mark H.; Smith, Jordan N.; Baer, Donald R.

    2016-06-01

    Silver nanoparticles of many types are widely used in consumer and medical products. The surface chemistry of particles and the coatings that form during synthesis or use in many types of media can significantly impact the behaviors of particles including dissolution, transformation and biological or environmental impact. Consequently it is useful to be able to extract information about the thickness of surface coatings and other attributes of nanoparticles produced in a variety of ways. It has been demonstrated that X-ray Photoelectron Spectroscopy (XPS) can be reliably used to determine the thickness of organic and other nanoparticles coatings and shells. However, care is required to produce reliable and consistent information. Here we report the XPS spectra from gold/silver core-shell nanoparticles of nominal size 20 nm removed from a citrate saturated solution after one and two washing cycles. The Simulation of Electron Spectra for Surface Analysis (SESSA) program had been used to model peak amplitudes to obtain information on citrate coatings that remain after washing and demonstrate the presence of the gold core. This data is provided so that others can compare use of SESSA or other modeling approaches to quantify the nature of coatings to those already published and to explore the impacts particle non-uniformities on XPS signals from core-shell nanoparticles.

  7. GD-OES and XPS coupling: A new way for the chemical profiling of photovoltaic absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Mercier, Dimitri, E-mail: dimitri.mercier@uvsq.fr [Institut Lavoisier de Versailles, 45 av. des Etats-Unis, 78035 Versailles Cedex (France); Bouttemy, Muriel; Vigneron, Jackie [Institut Lavoisier de Versailles, 45 av. des Etats-Unis, 78035 Versailles Cedex (France); Chapon, Patrick [HORIBA Jobin Yvon SAS, F-91165 Longjumeau (France); Etcheberry, Arnaud [Institut Lavoisier de Versailles, 45 av. des Etats-Unis, 78035 Versailles Cedex (France)

    2015-08-30

    Highlights: • The coupling between GD-OES and XPS analysis is a promising way for fine characterization of thin layers. • Crater surface modifications obtained after GD-OES sputtering depend to the plasma gas. • Inversion of the gas flow improves the surface of the crater. • The modified layer is totally eliminated a few seconds after restarting GD-OES sputtering. - Abstract: In this paper, we examine the complementarity of Glow Discharge Optical Emission Spectroscopy (GD-OES) and X Ray Photoelectron Spectroscopy (XPS) for the realization of fine chemical depth profiling of photovoltaic absorbers using Cu(In,Ga)Se{sub 2} (CIGS) materials. The possibility to use sequentially these two techniques is discussed in this paper. We have evaluated the chemical modifications of the crater after GD-OES analyses which depend on the manner of finishing the plasma etching sequence; and we propose different ways to limit or eliminate this effect. For the moment, an intermediate step (wet chemical etching or weak sputtering) is required to obtain a CIGS phase in the crater. Finally, we have demonstrated the possibility to restart the GD-OES analyses of the materials after XPS quantification or GD-OES breaking without modifying the profile shape.

  8. Morphological, chemical and structural characterisation of deciduous enamel: SEM, EDS, XRD, FTIR and XPS analysis.

    Science.gov (United States)

    Zamudio-Ortega, C M; Contreras-Bulnes, R; Scougall-Vilchis, R J; Morales-Luckie, R A; Olea-Mejía, O F; Rodríguez-Vilchis, L E

    2014-09-01

    The purpose of this study was to characterise the enamel surface of sound deciduous teeth in terms of morphology, chemical composition, structure and crystalline phases. The enamel of 30 human deciduous teeth was examined by: Scanning Electron Microscopy (SEM), Energy Dispersive X-Ray Spectroscopy (EDS), X-ray Powder Diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), and X-ray Photoelectron Spectroscopy (XPS). Chemical differences between incisors and canines were statistically evaluated using the Mann-Whitney U test (p ≤ 0.05). Three enamel patterns were observed by SEM: 'mostly smooth with some groves', 'abundant microporosities' and 'exposed prisms'. The average Ca/P molar ratios were 1.37 and 1.03 by EDS and XPS, respectively. The crystallite size determined by XRD was 210.82 ± 16.78 Å. The mean ratio between Ca bonded to phosphate and Ca bonded to hydroxyl was approximately 10:1. The enamel of sound deciduous teeth showed two main patterns: 'mostly smooth with some groves' and 'abundant microporosities'. 'Exposed prisms' was a secondary pattern. There were slight variations among the Ca/P molar ratios found by EDS and XPS, suggesting differences in the mineral content from the enamel surface to the interior. The crystalline phases found in enamel were hydroxyapatite and carbonate apatite, with major type B than type A carbonate incorporation.

  9. Surface chemical characterization of PM{sub 10} samples by XPS

    Energy Technology Data Exchange (ETDEWEB)

    Atzei, Davide, E-mail: datzei@unica.it [Dipartimento di Scienze Chimiche e Geologiche, Università di Cagliari, Complesso Universitario di Monserrato, S.S. 554 Bivio per Sestu, I-09042 Monserrato, Cagliari (Italy); Fantauzzi, Marzia; Rossi, Antonella [Dipartimento di Scienze Chimiche e Geologiche, Università di Cagliari, Complesso Universitario di Monserrato, S.S. 554 Bivio per Sestu, I-09042 Monserrato, Cagliari (Italy); Fermo, Paola [Dipartimento di Chimica, Università degli Studi Milano, Via Golgi 19, I-20133 Milano (Italy); Piazzalunga, Andrea [Dipartimento di Chimica, Università degli Studi Milano, Via Golgi 19, I-20133 Milano (Italy); Dipartimento di Scienze dell’Ambiente e del territorio, Università degli Studi di Milano-Bicocca, Piazza della Scienza 1, I-20122 Milano (Italy); Valli, Gianluigi; Vecchi, Roberta [Dipartimento di Fisica, Università degli Studi di Milano, via Celoria 16, I-20133 Milano (Italy)

    2014-07-01

    Samples of particulate matter (PM) collected in the city of Milan during wintertime were analyzed by X-ray photoelectron spectroscopy (XPS), thermal optical transmittance (TOT), ionic chromatography (IC) and X-ray fluorescence (XRF) in order to compare quantitative bulk analysis and surface analysis. In particular, the analysis of surface carbon is here presented following a new approach for the C1s curve fitting aiming this work to prove the capability of XPS to discriminate among elemental carbon (EC) and organic carbon (OC) and to quantify the carbon-based compounds that might be present in the PM. Since surface of urban PM is found to be rich in carbon it is important to be able to distinguish between the different species. XPS results indicate that aromatic and aliphatic species are adsorbed on the PM surface. Higher concentrations of (EC) are present in the bulk. Also nitrogen and sulfur were detected on the surfaces and a qualitative and quantitative analysis is provided. Surface concentration of sulfate ion is equal to that found by bulk analysis; moreover surface analysis shows an additional signal due to organic sulfur not detectable by the other methods. Surface appears to be also enriched in nitrogen.

  10. Quantitative Surface Analysis by Xps (X-Ray Photoelectron Spectroscopy: Application to Hydrotreating Catalysts

    Directory of Open Access Journals (Sweden)

    Beccat P.

    1999-07-01

    Full Text Available XPS is an ideal technique to provide the chemical composition of the extreme surface of solid materials, vastly applied to the study of catalysts. In this article, we will show that a quantitative approach, based upon fundamental expression of the XPS signal, has enabled us to obtain a consistent set of response factors for the elements of the periodic table. In-depth spadework has been necessary to know precisely the transmission function of the spectrometer used at IFP. The set of response factors obtained enables to perform, on a routine basis, a quantitative analysis with approximately 20% relative accuracy, which is quite acceptable for an analysis of such a nature. While using this quantitative approach, we have developed an analytical method specific to hydrotreating catalysts that allows obtaining the sulphiding degree of molybdenum quite reliably and reproducibly. The usage of this method is illustrated by two examples for which XPS spectroscopy has provided with information sufficiently accurate and quantitative to help understand the reactivity differences between certain MoS2/Al2O3 or NiMoS/Al2O3-type hydrotreating catalysts.

  11. Soft X-ray-induced decomposition of amino acids: An XPS, mass spectrometry, and NEXAFS study

    International Nuclear Information System (INIS)

    Zubavichus, Yan; Fuchs, Oliver; Weinhardt, Lothar; Heske, Clemens; Umbach, Eberhard; Denlinger, Jonathan D.; Grunze, Michael

    2003-01-01

    Decomposition of five amino acids, alanine, serine, cysteine, aspartic acid, and asparagine, under irradiation with soft X-rays (magnesium Ka X-ray source) in ultra-high vacuum was studied by means of X-ray photoelectron spectrometry (XPS) and mass spectrometry. A comparative analysis of changes in XPS line shapes, stoichiometry and residual gas composition indicates that the molecules decompose by several pathways. Dehydration, decarboxylation, decarbonylation,deamination and desulfurization of pristine molecules accompanied by desorption of H2, H2O, CO2, CO, NH3and H2S are observed with rates depending on the specific amino acid. NEXAFS spectra of cysteine at the carbon, oxygen and nitrogen K-shell and sulfur L2,3 edges complement the XPS and mass spectrometry data and show that the exposure of the sample to an intense soft X-ray synchrotron beam results in the formation of C-C and C-N double and triple bonds. Qualitatively, the amino acids studied can be arranged in the following ascending order of radiation stability:serine< alanine< aspartic acid< cysteine< asparagine

  12. XPS and EPXMA investigation and chemical speciation of aerosol samples formed in LWR core melting experiments

    International Nuclear Information System (INIS)

    Moers, H.; Jenett, H.; Kaufmann, R.; Klewe-Nebenius, H.; Pfennig, G.; Ache, H.J.

    1985-09-01

    Aerosol samples consisting of fission products and elements of light water reactor structural materials were collected during simulating in a laboratory scale the heat-up phase of a core melt accident. The aerosol particles were formed in a steam atmosphere at temperatures between 1200 and 1900 0 C of the melting charge. The investigation of the samples by use of X-ray photoelectron spectroscopy (XPS) permitted the chemical speciation of the detected aerosol constituents silver, cadmium, indium, tellurium, iodine, and cesium. A comparison of the elemental analysis results obtained from XPS with those achieved from electron probe X-ray micro analysis (EPXMA) revealed that aerosol particle surface and aerosol particle bulk are principally composed of the same elements and that these compositions vary with release temperature. In addition, quantitative differences between the composition of surface and bulk have only been observed for those aerosol samples which were collected at higher melting charge temperatures. In order to obtain direct information on chemical species below the surface selected samples were argon ion bombarded. Changes in composition and chemistry were monitored by XPS, and the results were interpreted in light of the effects, which were observed when appropriate standard samples were sputtered. (orig.) [de

  13. XPS and NEXAFS study of tyrosine-terminated propanethiol assembled on gold

    CERN Document Server

    Petoral, R M

    2003-01-01

    Tyrosine-terminated propanethiol (TPT), tyrosine linked to 3-mercaptopropionic acid through an amide bond, is adsorbed to gold surfaces. The adsorbates are characterized by means of X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure spectroscopy (NEXAFS). XPS is used to investigate the chemical binding and electronic structure of the monolayer. Strong molecular binding of the tyrosine derivative on the gold surface through the sulfur atom is attained. Angle-dependent XPS results shows that TPT molecules are oriented with the sulfur atoms molecularly oriented close to the gold surface and that the phenol moiety is oriented away from the gold surface. Average orientation of the adsorbate on gold is deduced using the NEXAFS results. It shows that the main molecular axis is tilted approximately 38 deg. relative to the Au surface normal. The ring plane of the phenol moiety exhibits a preferential orientation with an average tilt angle of the normal of the ring plane from the surfa...

  14. Theoretical calculations of valence states in Fe-Mo compounds

    International Nuclear Information System (INIS)

    Estrada, F; Navarro, O; Noverola, H; Suárez, J R; Avignon, M

    2014-01-01

    The half-metallic ferromagnetic double perovskite compound Sr 2 FeMoO 6 is considered as an important material for spintronic applications. It appears to be fundamental to understand the role of electronic parameters controlling the half-metallic ground state. Fe-Mo double perovskites usually present some degree of Fe/Mo disorder which generally increases with doping. In this work, we study the valence states of Fe-Mo cations in the off-stoichiometric system Sr 2 Fe 1+x Mo 1−x O 6 (−1 ≤ x ≤ 1/3) with disorder. Our results for Fe and Mo valence states are obtained using the Green functions and the renormalization perturbation expansion method. The model is based on a correlated electron picture with localized Fe-spins and conduction Mo-electrons interacting with the local spins via a double-exchange-type mechanism

  15. Theory of Valence Transitions in Ytterbium and Europium Intermetallics

    International Nuclear Information System (INIS)

    Zlatic, V.; Freericks, J.K.

    2001-01-01

    The exact solution of the multi-component Falicov-Kimball model in infinite-dimensions is presented and used to discuss a new fixed point of valence fluctuating intermetallics with Yb and Eu ions. In these compounds, temperature, external magnetic field, pressure, or chemical pressure induce a transition between a metallic state with the f-ions in a mixed-valent (non-magnetic) configuration and a semi-metallic state with the f-ions in an integral-valence (paramagnetic) configuration. The zero-field transition occurs at the temperature T V , while the zero-temperature transition sets in at the critical field H c . We present the thermodynamic and dynamic properties of the model for an arbitrary concentration of d- and f -electrons. For large U, we find a MI transition, triggered by the temperature or field- induced change in the f-occupancy. (author)

  16. The chemical bond in inorganic chemistry the bond valence model

    CERN Document Server

    Brown, I David

    2016-01-01

    The bond valence model is a version of the ionic model in which the chemical constraints are expressed in terms of localized chemical bonds formed by the valence charge of the atoms. Theorems derived from the properties of the electrostatic flux predict the rules obeyed by both ionic and covalent bonds. They make quantitative predictions of coordination number, crystal structure, bond lengths and bond angles. Bond stability depends on the matching of the bonding strengths of the atoms, while the conflicting requirements of chemistry and space lead to the structural instabilities responsible for the unusual physical properties displayed by some materials. The model has applications in many fields ranging from mineralogy to molecular biology.

  17. Bond charge approximation for valence electron density in elemental semiconductors

    International Nuclear Information System (INIS)

    Bashenov, V.K.; Gorbachov, V.E.; Marvakov, D.I.

    1985-07-01

    The spatial valence electron distribution in silicon and diamond is calculated in adiabatic bond charge approximation at zero temperature when bond charges have the Gaussian shape and their tensor character is taken into account. An agreement between theory and experiment has been achieved. For this purpose Xia's ionic pseudopotentials and Schulze-Unger's dielectric function are used. By two additional parameters Asub(B) and Zsub(B)sup(') we describe the spatial extent of the bond charge and local-field corrections, respectively. The parameter Zsub(B)sup(') accounts for the ratio between the Coulomb and exchange correlation interactions of the valence electrons and its silicon and diamond values have different signs. (author)

  18. Spin dynamics and magnetic ordering in mixed valence systems

    International Nuclear Information System (INIS)

    Shapiro, S.M.; Moller, H.B.; Axe, J.D.; Birgeneau, R.J.; Bucher, E.

    1977-01-01

    Neutron scattering measurements are reported on the mixed valence compounds Ce/sub 1-x/Th/sub x/ and TmSe. The Chi''(Q,ω) as derived from the inelastic spectra of Ce 0 . 74 Th 0 . 26 shows a peak in the γ phase near 20.0 meV and shifts abruptly to greater than 70.0 meV at the transition to the α phase. The temperature independence of the susceptibility within the γ phase cannot be simply reconciled with the temperature dependence of the valence within the γ phase. TmSe is shown to order in a type I antiferromagnetic structure below T/sub N/ approx. 3.2 K. The magnetic phase diagram is understood as a successive domain reorientation and a metamagnetic phase transition for T 3+ orders in a type II structure but never achieves long range order

  19. The olfactory tubercle encodes odor valence in behaving mice.

    Science.gov (United States)

    Gadziola, Marie A; Tylicki, Kate A; Christian, Diana L; Wesson, Daniel W

    2015-03-18

    Sensory information acquires meaning to adaptively guide behaviors. Despite odors mediating a number of vital behaviors, the components of the olfactory system responsible for assigning meaning to odors remain unclear. The olfactory tubercle (OT), a ventral striatum structure that receives monosynaptic input from the olfactory bulb, is uniquely positioned to transform odor information into behaviorally relevant neural codes. No information is available, however, on the coding of odors among OT neurons in behaving animals. In recordings from mice engaged in an odor discrimination task, we report that the firing rate of OT neurons robustly and flexibly encodes the valence of conditioned odors over identity, with rewarded odors evoking greater firing rates. This coding of rewarded odors occurs before behavioral decisions and represents subsequent behavioral responses. We predict that the OT is an essential region whereby odor valence is encoded in the mammalian brain to guide goal-directed behaviors. Copyright © 2015 the authors 0270-6474/15/354515-13$15.00/0.

  20. Clustering of low-valence particles: structure and kinetics.

    Science.gov (United States)

    Markova, Olga; Alberts, Jonathan; Munro, Edwin; Lenne, Pierre-François

    2014-08-01

    We compute the structure and kinetics of two systems of low-valence particles with three or six freely oriented bonds in two dimensions. The structure of clusters formed by trivalent particles is complex with loops and holes, while hexavalent particles self-organize into regular and compact structures. We identify the elementary structures which compose the clusters of trivalent particles. At initial stages of clustering, the clusters of trivalent particles grow with a power-law time dependence. Yet at longer times fusion and fission of clusters equilibrates and clusters form a heterogeneous phase with polydispersed sizes. These results emphasize the role of valence in the kinetics and stability of finite-size clusters.

  1. Effects of valence and divided attention on cognitive reappraisal processes

    OpenAIRE

    Morris, John A.; Leclerc, Christina M.; Kensinger, Elizabeth A.

    2014-01-01

    Numerous studies have investigated the neural substrates supporting cognitive reappraisal, identifying the importance of cognitive control processes implemented by prefrontal cortex (PFC). This study examined how valence and attention affect the processes used for cognitive reappraisal by asking participants to passively view or to cognitively reappraise positive and negative images with full or divided attention. When participants simply viewed these images, results revealed few effects of v...

  2. Magnetic excitations in intermediate valence semiconductors with singlet ground state

    International Nuclear Information System (INIS)

    Kikoin, K.A.; Mishchenko, A.S.

    1994-01-01

    The explanation of the origin inelastic peaks in magnetic neutron scattering spectra of the mixed-valent semiconductor SmB 6 is proposed. It is shown that the excitonic theory of intermediate valence state not only gives the value of the peak frequency but also explains the unusual angular dependence of intensity of inelastic magnetic scattering and describes the dispersion of magnetic excitations in good agreement with experiment

  3. Continuum-limit scaling of overlap fermions as valence quarks

    International Nuclear Information System (INIS)

    Cichy, Krzysztof; Herdoiza, Gregorio; Jansen, Karl

    2009-10-01

    We present the results of a mixed action approach, employing dynamical twisted mass fermions in the sea sector and overlap valence fermions, with the aim of testing the continuum limit scaling behaviour of physical quantities, taking the pion decay constant as an example. To render the computations practical, we impose for this purpose a fixed finite volume with lattice size L∼1.3 fm. We also briefly review the techniques we have used to deal with overlap fermions. (orig.)

  4. Few-valence-particle excitations around doubly magic 132Sn

    International Nuclear Information System (INIS)

    Daly, P.J.; Zhang, C.T.; Bhattacharyya, P.

    1996-01-01

    Prompt γ-ray cascades in neutron-rich nuclei around doubly-magic 132 Sn have been studied using a 248 Cm fission source. Yrast states located in the N = 82 isotones 134 Te and 135 I are interpreted as valence proton and neutron particle-hole core excitations with the help of shell model calculations employing empirical nucleon-nucleon interactions from both 132 Sn and 208 Pb regions

  5. Magnetic re-entrance in intermediate valence compounds

    International Nuclear Information System (INIS)

    Allub, R.; Machiavelli, O.; Balseiro, C.; Alascio, B.

    1980-01-01

    The possibility is explored of magnetic re-entrance in intermediate valence compounds. Using a simplified Anderson-Lattice model the pressure-temperature magnetic phase diagram is obtained. This diagram shows that for some value of the microscopic parameters the temperature induced two transitions (non-magnetic to magnetically ordered to paramagnetic). The magnetization and the average occupation number of the localized state are calculated. Estimations of the observability of the effect in systems like CeAl 2 are made. (author)

  6. Feedback Valence Affects Auditory Perceptual Learning Independently of Feedback Probability

    Science.gov (United States)

    Amitay, Sygal; Moore, David R.; Molloy, Katharine; Halliday, Lorna F.

    2015-01-01

    Previous studies have suggested that negative feedback is more effective in driving learning than positive feedback. We investigated the effect on learning of providing varying amounts of negative and positive feedback while listeners attempted to discriminate between three identical tones; an impossible task that nevertheless produces robust learning. Four feedback conditions were compared during training: 90% positive feedback or 10% negative feedback informed the participants that they were doing equally well, while 10% positive or 90% negative feedback informed them they were doing equally badly. In all conditions the feedback was random in relation to the listeners’ responses (because the task was to discriminate three identical tones), yet both the valence (negative vs. positive) and the probability of feedback (10% vs. 90%) affected learning. Feedback that informed listeners they were doing badly resulted in better post-training performance than feedback that informed them they were doing well, independent of valence. In addition, positive feedback during training resulted in better post-training performance than negative feedback, but only positive feedback indicating listeners were doing badly on the task resulted in learning. As we have previously speculated, feedback that better reflected the difficulty of the task was more effective in driving learning than feedback that suggested performance was better than it should have been given perceived task difficulty. But contrary to expectations, positive feedback was more effective than negative feedback in driving learning. Feedback thus had two separable effects on learning: feedback valence affected motivation on a subjectively difficult task, and learning occurred only when feedback probability reflected the subjective difficulty. To optimize learning, training programs need to take into consideration both feedback valence and probability. PMID:25946173

  7. Human Amygdala Tracks a Feature-Based Valence Signal Embedded within the Facial Expression of Surprise.

    Science.gov (United States)

    Kim, M Justin; Mattek, Alison M; Bennett, Randi H; Solomon, Kimberly M; Shin, Jin; Whalen, Paul J

    2017-09-27

    Human amygdala function has been traditionally associated with processing the affective valence (negative vs positive) of an emotionally charged event, especially those that signal fear or threat. However, this account of human amygdala function can be explained by alternative views, which posit that the amygdala might be tuned to either (1) general emotional arousal (activation vs deactivation) or (2) specific emotion categories (fear vs happy). Delineating the pure effects of valence independent of arousal or emotion category is a challenging task, given that these variables naturally covary under many circumstances. To circumvent this issue and test the sensitivity of the human amygdala to valence values specifically, we measured the dimension of valence within the single facial expression category of surprise. Given the inherent valence ambiguity of this category, we show that surprised expression exemplars are attributed valence and arousal values that are uniquely and naturally uncorrelated. We then present fMRI data from both sexes, showing that the amygdala tracks these consensus valence values. Finally, we provide evidence that these valence values are linked to specific visual features of the mouth region, isolating the signal by which the amygdala detects this valence information. SIGNIFICANCE STATEMENT There is an open question as to whether human amygdala function tracks the valence value of cues in the environment, as opposed to either a more general emotional arousal value or a more specific emotion category distinction. Here, we demonstrate the utility of surprised facial expressions because exemplars within this emotion category take on valence values spanning the dimension of bipolar valence (positive to negative) at a consistent level of emotional arousal. Functional neuroimaging data showed that amygdala responses tracked the valence of surprised facial expressions, unconfounded by arousal. Furthermore, a machine learning classifier identified

  8. Cohort study comparing prostate photovaporisation with XPS 180W and HPS 120W laser.

    Science.gov (United States)

    López, B; Capitán, C; Hernández, V; de la Peña, E; Jiménez-Valladolid, I; Guijarro, A; Pérez-Fernández, E; Llorente, C

    2016-01-01

    Prostate photovaporisation with Greenlight laser for the surgical treatment of benign prostate hyperplasia has rapidly evolve to the new XPS 180W. We have previously demonstrated the safety and efficacy of the HPS 120W. The aim of this study was to assess the functional and safety results, with a year of follow-up, of photovaporisation using the XPS 180W laser compared with its predecessor. A cohort study was conducted with a series of 191 consecutive patients who underwent photovaporisation between 1/2008 and 5/2013. The inclusion criteria were an international prostate symptom score (IPSS) >15 after medical failure, a prostate volume <80 cm(3) and a maximum flow <15 mL/s. We assessed preoperative and intraoperative variables (energy used, laser time and total surgical time), complications, catheter hours, length of stay and functional results (maximum flow, IPSS, prostate-specific antigen and prostate volume) at 3, 6 and 12 months. We analysed the homogeneity in preoperative characteristics of the 2 groups through univariate analysis techniques. The postoperative functional results were assessed through an analysis of variance of repeated measures with mixed models. A total of 109 (57.1%) procedures were performed using HPS 120W, and 82 (42.9%) were performed using XPS. There were no differences between the preoperative characteristics. We observed significant differences both in the surgical time and effective laser time in favour of the XPS system. This advantage was 11% (48 ± 15.7 vs. 53.8 ± 16.2, p<.05) and 9% (32.8 ± 11.7 vs. 36 ± 11.6, p<.05), respectively. There were no statistically significant differences in the rest of the analysed parameters. The technical improvements in the XPS 180W system help reduce surgical time, maintaining the safety and efficacy profile offered by the HPS 120W system, with completely superimposable results at 1 year of follow-up. Copyright © 2015 AEU. Publicado por Elsevier España, S.L.U. All rights reserved.

  9. Optoelectronic properties of valence-state-controlled amorphous niobium oxide

    Science.gov (United States)

    Onozato, Takaki; Katase, Takayoshi; Yamamoto, Akira; Katayama, Shota; Matsushima, Koichi; Itagaki, Naho; Yoshida, Hisao; Ohta, Hiromichi

    2016-06-01

    In order to understand the optoelectronic properties of amorphous niobium oxide (a-NbO x ), we have investigated the valence states, local structures, electrical resistivity, and optical absorption of a-NbO x thin films with various oxygen contents. It was found that the valence states of Nb ion in a-NbO x films can be controlled from 5+  to 4+  by reducing oxygen pressure during film deposition at room temperature, together with changing the oxide-ion arrangement around Nb ion from Nb2O5-like to NbO2-like local structure. As a result, a four orders of magnitude reduction in the electrical resistivity of a-NbO x films was observed with decreasing oxygen content, due to the carrier generation caused by the appearance and increase of an oxygen-vacancy-related subgap state working as an electron donor. The tunable optoelectronic properties of a-NbO x films by valence-state-control with oxygen-vacancy formation will be useful for potential flexible optoelectronic device applications.

  10. Basic features of the pion valence-quark distribution function

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Lei [CSSM, School of Chemistry and Physics, University of Adelaide, Adelaide, SA 5005 (Australia); Mezrag, Cédric; Moutarde, Hervé [Centre de Saclay, IRFU/Service de Physique Nucléaire, F-91191 Gif-sur-Yvette (France); Roberts, Craig D. [Physics Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Rodríguez-Quintero, Jose [Departamento de Física Aplicada, Facultad de Ciencias Experimentales, Universidad de Huelva, Huelva E-21071 (Spain); Tandy, Peter C. [Center for Nuclear Research, Department of Physics, Kent State University, Kent, OH 44242 (United States)

    2014-10-07

    The impulse-approximation expression used hitherto to define the pion's valence-quark distribution function is flawed because it omits contributions from the gluons which bind quarks into the pion. A corrected leading-order expression produces the model-independent result that quarks dressed via the rainbow–ladder truncation, or any practical analogue, carry all the pion's light-front momentum at a characteristic hadronic scale. Corrections to the leading contribution may be divided into two classes, responsible for shifting dressed-quark momentum into glue and sea-quarks. Working with available empirical information, we use an algebraic model to express the principal impact of both classes of corrections. This enables a realistic comparison with experiment that allows us to highlight the basic features of the pion's measurable valence-quark distribution, q{sup π}(x); namely, at a characteristic hadronic scale, q{sup π}(x)∼(1−x){sup 2} for x≳0.85; and the valence-quarks carry approximately two-thirds of the pion's light-front momentum.

  11. Automated Construction of Molecular Active Spaces from Atomic Valence Orbitals.

    Science.gov (United States)

    Sayfutyarova, Elvira R; Sun, Qiming; Chan, Garnet Kin-Lic; Knizia, Gerald

    2017-09-12

    We introduce the atomic valence active space (AVAS), a simple and well-defined automated technique for constructing active orbital spaces for use in multiconfiguration and multireference (MR) electronic structure calculations. Concretely, the technique constructs active molecular orbitals capable of describing all relevant electronic configurations emerging from a targeted set of atomic valence orbitals (e.g., the metal d orbitals in a coordination complex). This is achieved via a linear transformation of the occupied and unoccupied orbital spaces from an easily obtainable single-reference wave function (such as from a Hartree-Fock or Kohn-Sham calculations) based on projectors to targeted atomic valence orbitals. We discuss the premises, theory, and implementation of the idea, and several of its variations are tested. To investigate the performance and accuracy, we calculate the excitation energies for various transition-metal complexes in typical application scenarios. Additionally, we follow the homolytic bond breaking process of a Fenton reaction along its reaction coordinate. While the described AVAS technique is not a universal solution to the active space problem, its premises are fulfilled in many application scenarios of transition-metal chemistry and bond dissociation processes. In these cases the technique makes MR calculations easier to execute, easier to reproduce by any user, and simplifies the determination of the appropriate size of the active space required for accurate results.

  12. Chromium valences in ureilite olivine and implications for ureilite petrogenesis

    Science.gov (United States)

    Goodrich, C. A.; Sutton, S. R.; Wirick, S.; Jercinovic, M. J.

    2013-12-01

    Ureilites are a group of ultramafic achondrites commonly thought to be residues of partial melting on a carbon-rich asteroid. They show a large variation in FeO content (olivine Fo values ranging from ∼74 to 95) that cannot be due to igneous fractionation and suggests instead variation in oxidation state. The presence of chromite in only a few of the most ferroan (Fo 75-76) samples appears to support such a model. MicroXANES analyses were used in this study to determine the valence states of Cr (previously unknown) in olivine cores of 11 main group ureilites. The goal of this work was to use a method that is independent of Fo to determine the oxidation conditions under which ureilites formed, in order to evaluate whether the ureilite FeO-variation is correlated with oxidation state, and whether it is nebular or planetary in origin. Two of the analyzed samples, LEW 88774 (Fo 74.2) and NWA 766 (Fo 76.7) contain primary chromite; two others, LAP 03587 (Fo 74.4) and CMS 04048 (Fo 76.2) contain sub-micrometer-sized exsolutions of chromite + Ca-rich pyroxene in olivine; and one, EET 96328 (Fo 85.2) contains an unusual chromite grain of uncertain origin. No chromite has been observed in the remaining six samples (Fo 77.4-92.3). Chromium in olivine in all eleven samples was found to be dominated by the divalent species, with valences ranging from 2.10 ± 0.02 (1σ) to 2.46 ± 0.04. The non-chromite-bearing ureilites have the most reduced Cr, with a weighted mean valence of 2.12 ± 0.01, i.e., Cr2+/Cr3+ = 7.33. All low-Fo chromite-bearing ureilites have more oxidized Cr, with valences ranging from 2.22 ± 0.03 to 2.46 ± 0.04. EET 96328, whose chromite grain we interpret as a late-crystallizing phase, yielded a reduced Cr valence of 2.15 ± 0.07, similar to the non-chromite-bearing samples. Based on the measured Cr valences, magmatic (1200-1300 °C) oxygen fugacities (fO2) of the non-chromite-bearing samples were estimated to be in the range IW-1.9 to IW-2.8 (assuming

  13. Electron band bending and surface sensitivity: X-ray photoelectron spectroscopy of polar GaN surfaces

    Czech Academy of Sciences Publication Activity Database

    Bartoš, Igor; Romanyuk, Olexandr; Paskova, T.; Jiříček, Petr

    2017-01-01

    Roč. 664, Oct (2017), s. 241-245 ISSN 0039-6028 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : GaN * XPS * band banding Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.062, year: 2016

  14. Excitations of one-valence-proton, one-valence-neutron nucleus {sup 210}Bi from cold-neutron capture

    Energy Technology Data Exchange (ETDEWEB)

    Cieplicka-Oryńczak, N. [INFN sezione di Milano, Via Celoria 16, 20133 Milano (Italy); Institute of Nuclear Physics, Polish Academy of Sciences, PL-31342 Kraków (Poland); Fornal, B.; Szpak, B. [Institute of Nuclear Physics, Polish Academy of Sciences, PL-31342 Kraków (Poland); Leoni, S.; Bottoni, S. [INFN sezione di Milano, Via Celoria 16, 20133 Milano (Italy); Università degli Studi di Milano, Via Celoria 16, 20133 Milano (Italy); Bazzacco, D. [Dipartimento di Fisica e Astronomia dell’Università, I-35131 Padova (Italy); INFN Sezione di Padova, I-35131 Padova (Italy); Blanc, A.; Jentschel, M.; Köster, U.; Mutti, P.; Soldner, T. [Institute Laue-Langevin, 6, rue Jules Horowitz, 38042 Grenoble Cedex 9 (France); Bocchi, G. [Università degli Studi di Milano, Via Celoria 16, 20133 Milano (Italy); France, G. de [GANIL, Bd. Becquerel, BP 55027, 14076 CAEN Cedex 05 (France); Simpson, G. [LPSC, Université Joseph Fourier Grenoble 1, CNRS/IN2P3, Institut National Polytechnique de Grenoble, F-38026 Grenoble Cedex (France); Ur, C. [INFN Sezione di Padova, Via F. Marzolo 8, I-35131 Padova (Italy); Urban, W. [Faculty of Physics, University of Warsaw, ul. Hoża 69, 02-681, Warszawa (Poland)

    2015-10-15

    The low-spin structure of one-proton, one-neutron {sup 210}Bi nucleus was investigated in cold-neutron capture reaction on {sup 209}Bi. The γ-coincidence measurements were performed with use of EXILL array consisted of 16 HPGe detectors. The experimental results were compared to shell-model calculations involving valence particles excitations. The {sup 210}Bi nucleus offers the potential to test the effective proton-neutron interactions because most of the states should arise from the proton-neutron excitations. Additionally, it was discovered that a few states should come from the couplings of valence particles to the 3{sup −} octupole vibration in {sup 208}Pb which provides also the possibility of testing the calculations involving the core excitations.

  15. X-ray photoelectron spectra structure of actinide compounds stipulated by electrons of the inner valence molecular orbitals (IVMO)

    International Nuclear Information System (INIS)

    Teterin, Yu. A.; Ivanov, K. E.

    1997-01-01

    Development of precise X-ray photoelectron spectroscopy using X-ray radiation hν< 1.5 KeV allowed to carry out immediate investigations of fine spectra structure of both weakly bond and deep electrons. Based on the experiments and the obtained results it may be concluded: 1. Under favourable conditions the inner valence molecular orbitals (IVMO) may form in all actinide compounds. 2. The XPS spectra fine structure stipulated by IVMO electrons allows to judge upon the degree of participation of the filled AO electrons in the chemical bond, on the structure o considered atom close environment and the bond lengths in compounds. For amorphous compounds the obtaining of such data based on X-ray structure analysis is restricted. 3. The summary contribution of IVMO electrons to the absolute value of the chemical bonding is comparable with the corresponding value of OMO electrons contribution to the atomic bonding. This fact is very important and new in chemistry. (author)

  16. Energy band dispersion in photoemission spectra of argon clusters

    International Nuclear Information System (INIS)

    Foerstel, Marko; Mucke, Melanie; Arion, Tiberiu; Lischke, Toralf; Barth, Silko; Ulrich, Volker; Ohrwall, Gunnar; Bjoerneholm, Olle; Hergenhahn, Uwe; Bradshaw, Alex M.

    2011-01-01

    Using photoemission we have investigated free argon clusters from a supersonic nozzle expansion in the photon energy range from threshold up to 28 eV. Measurements were performed both at high resolution with a hemispherical electrostatic energy analyser and at lower resolution with a magnetic bottle device. The latter experiments were performed for various mean cluster sizes. In addition to the ∼1.5 eV broad 3p-derived valence band seen in previous work, there is a sharper feature at ∼15 eV binding energy. Surprisingly for non-oriented clusters, this peak shifts smoothly in binding energy over the narrow photon energy range 15.5-17.7 eV, indicating energy band dispersion. The onset of this bulk band-like behaviour could be determined from the cluster size dependence.

  17. Valenced cues and contexts have different effects on event-based prospective memory.

    Science.gov (United States)

    Graf, Peter; Yu, Martin

    2015-01-01

    This study examined the separate influence and joint influences on event-based prospective memory task performance due to the valence of cues and the valence of contexts. We manipulated the valence of cues and contexts with pictures from the International Affective Picture System. The participants, undergraduate students, showed higher performance when neutral compared to valenced pictures were used for cueing prospective memory. In addition, neutral pictures were more effective as cues when they occurred in a valenced context than in the context of neutral pictures, but the effectiveness of valenced cues did not vary across contexts that differed in valence. The finding of an interaction between cue and context valence indicates that their respective influence on event-based prospective memory task performance cannot be understood in isolation from each other. Our findings are not consistent with by the prevailing view which holds that the scope of attention is broadened and narrowed, respectively, by positively and negatively valenced stimuli. Instead, our findings are more supportive of the recent proposal that the scope of attention is determined by the motivational intensity associated with valenced stimuli. Consistent with this proposal, we speculate that the motivational intensity associated with different retrieval cues determines the scope of attention, that contexts with different valence values determine participants' task engagement, and that prospective memory task performance is determined jointly by attention scope and task engagement.

  18. Valenced cues and contexts have different effects on event-based prospective memory.

    Directory of Open Access Journals (Sweden)

    Peter Graf

    Full Text Available This study examined the separate influence and joint influences on event-based prospective memory task performance due to the valence of cues and the valence of contexts. We manipulated the valence of cues and contexts with pictures from the International Affective Picture System. The participants, undergraduate students, showed higher performance when neutral compared to valenced pictures were used for cueing prospective memory. In addition, neutral pictures were more effective as cues when they occurred in a valenced context than in the context of neutral pictures, but the effectiveness of valenced cues did not vary across contexts that differed in valence. The finding of an interaction between cue and context valence indicates that their respective influence on event-based prospective memory task performance cannot be understood in isolation from each other. Our findings are not consistent with by the prevailing view which holds that the scope of attention is broadened and narrowed, respectively, by positively and negatively valenced stimuli. Instead, our findings are more supportive of the recent proposal that the scope of attention is determined by the motivational intensity associated with valenced stimuli. Consistent with this proposal, we speculate that the motivational intensity associated with different retrieval cues determines the scope of attention, that contexts with different valence values determine participants' task engagement, and that prospective memory task performance is determined jointly by attention scope and task engagement.

  19. Metal-like Band Structures of Ultrathin Si {111} and {112} Surface Layers Revealed through Density Functional Theory Calculations.

    Science.gov (United States)

    Tan, Chih-Shan; Huang, Michael H

    2017-09-04

    Density functional theory calculations have been performed on Si (100), (110), (111), and (112) planes with tunable number of planes for evaluation of their band structures and density of states profiles. The purpose is to see whether silicon can exhibit facet-dependent properties derived from the presence of a thin surface layer having different band structures. No changes have been observed for single to multiple layers of Si (100) and (110) planes with a consistent band gap between the valence band and the conduction band. However, for 1, 2, 4, and 5 Si (111) and (112) planes, metal-like band structures were obtained with continuous density of states going from the valence band to the conduction band. For 3, 6, and more Si (111) planes, as well as 3 and 6 Si (112) planes, the same band structure as that seen for Si (100) and (110) planes has been obtained. Thus, beyond a layer thickness of five Si (111) planes at ≈1.6 nm, normal semiconductor behavior can be expected. The emergence of metal-like band structures for the Si (111) and (112) planes are related to variation in Si-Si bond length and bond distortion plus 3s and 3p orbital electron contributions in the band structure. This work predicts possession of facet-dependent electrical properties of silicon with consequences in FinFET transistor design. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Band-to-band and inner shell excitation VIS-UV photoluminescence of quaternary InAlGaN alloys

    International Nuclear Information System (INIS)

    Fukui, K.; Naoe, S.; Okada, K.; Hamada, S.; Hirayama, H.

    2006-01-01

    Visible and ultraviolet photoluminescence and photoluminescence excitation spectra of quaternary InAlGaN alloys were measured. The excitation photon energy covers from band edge to 180 eV, near both nitrogen K (∝400 eV) and aluminium K (∝1.5 keV) inner shell energy region. From photoluminescence excitation spectra photoluminescence intensity per incident photon number varies in proportion to incident photon energy. This result implies that many conduction band electron - valence band hole pairs which are responsible for photoluminescence are produced by high energy excitation. Time resolved decay curves were also measured in the same energy region. No effect of high energy excitation on time resolved decay measurements suggests a role of indium on the photoluminescence mechanism in InAlGaN system. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Band-to-band tunneling distance analysis in the heterogate electron–hole bilayer tunnel field-effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Padilla, J. L., E-mail: jose.padilladelatorre@epfl.ch [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Palomares, A. [Departamento de Matemática Aplicada, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain); Alper, C.; Ionescu, A. M. [Nanoelectronic Devices Laboratory, École Polytechnique Fédérale de Lausanne, Lausanne CH-1015 (Switzerland); Gámiz, F. [Departamento de Electrónica y Tecnología de los Computadores, Universidad de Granada, Avda. Fuentenueva s/n, 18071 Granada (Spain)

    2016-01-28

    In this work, we analyze the behavior of the band-to-band tunneling distance between electron and hole subbands resulting from field-induced quantum confinement in the heterogate electron–hole bilayer tunnel field-effect transistor. We show that, analogously to the explicit formula for the tunneling distance that can be easily obtained in the semiclassical framework where the conduction and valence band edges are allowed states, an equivalent analytical expression can be derived in the presence of field-induced quantum confinement for describing the dependence of the tunneling distance on the body thickness and material properties of the channel. This explicit expression accounting for quantum confinement holds valid provided that the potential wells for electrons and holes at the top and bottom of the channel can be approximated by triangular profiles. Analytical predictions are compared to simulation results showing very accurate agreement.

  2. Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structure

    Energy Technology Data Exchange (ETDEWEB)

    Vasilyev, Yu. B., E-mail: Yu.Vasilyev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Mikhailov, N. N. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Vasilyeva, G. Yu.; Ivánov, Yu. L.; Zakhar’in, A. O.; Andrianov, A. V. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Vorobiev, L. E.; Firsov, D. A. [Peter the Great Saint-Petersburg Polytechnic University (Russian Federation); Grigoriev, M. N. [Ustinov Baltic State Technical University “VOENMEKh” (Russian Federation); Antonov, A. V.; Ikonnikov, A. V.; Gavrilenko, V. I. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-07-15

    The terahertz electroluminescence from Cd{sub 0.7}Hg{sub 0.3}Te/HgTe quantum wells with an inverted band structure in lateral electric fields is experimentally detected and studied. The emission-spectrum maximum for wells 6.5 and 7 nm wide is near 6 meV which corresponds to interband optical transitions. The emission is explained by state depletion in the valence band and conduction band filling due to Zener tunneling, which is confirmed by power-law current–voltage characteristics.

  3. Absence of paired crossing in the positive parity bands of 124Cs

    Science.gov (United States)

    Singh, A. K.; Basu, A.; Nag, Somnath; Hübel, H.; Domscheit, J.; Ragnarsson, I.; Al-Khatib, A.; Hagemann, G. B.; Herskind, B.; Elema, D. R.; Wilson, J. N.; Clark, R. M.; Cromaz, M.; Fallon, P.; Görgen, A.; Lee, I.-Y.; Ward, D.; Ma, W. C.

    2018-02-01

    High-spin states in 124Cs were populated in the 64Ni(64Ni,p 3 n ) reaction and the Gammasphere detector array was used to measure γ -ray coincidences. Both positive- and negative-parity bands, including bands with chiral configurations, have been extended to higher spin, where a shape change has been observed. The configurations of the bands before and after the alignment are discussed within the framework of the cranked Nilsson-Strutinsky model. The calculations suggest that the nucleus undergoes a shape transition from triaxial to prolate around spin I ≃22 of the positive-parity states. The alignment gain of 8 ℏ , observed in the positive-parity bands, is due to partial alignment of several valence nucleons. This indicates the absence of band crossing due to paired nucleons in the bands.

  4. X-ray photoemission spectroscopy (XPS) study of uranium, neptunium and plutonium oxides in silicate-based glasses

    International Nuclear Information System (INIS)

    Lam, D.J.; Veal, B.W.; Paulikas, A.P.

    1982-11-01

    Using XPS as the principal investigative tool, we are in the process of examining the bonding properties of selected metal oxides added to silicate glass. In this paper, we present results of XPS studies of uranium, neptunium, and plutonium in binary and multicomponent silicate-based glasses. Models are proposed to account for the very diverse bonding properties of 6+ and 4+ actinide ions in the glasses

  5. Effects of Mn Ion Implantation on XPS Spectroscopy of GaN Thin Films

    Science.gov (United States)

    Majid, Abdul; Ahmad, Naeem; Rizwan, Muhammad; Khan, Salah Ud-Din; Ali, Fekri Abdulraqeb Ahmed; Zhu, Jianjun

    2018-02-01

    Gallium nitride (GaN) thin film was deposited onto a sapphire substrate and then implanted with 250 keV Mn ions at two different doses of 2 × 1016 ions/cm2 and 5 × 1016 ions/cm2. The as-grown and post-implantation-thermally-annealed samples were studied in detail using x-ray photoelectron spectroscopy (XPS). The XPS peaks of Ga 3 d, Ga 2 p, N 1 s, Mn 2 p and C 1 s were recorded in addition to a full survey of the samples. The doublet peaks of Ga 2 p for pure GaN were observed blue-shifted when compared with elemental Ga, and appeared further shifted to higher energies for the implanted samples. These observations point to changes in the bonds and the chemical environment of the host as a result of ion implantation. The results revealed broadening of the N 1 s peak after implantation, which is interpreted in terms of the presence of N-Mn bonds in addition to N-Ga bonds. The XPS spectra of Mn 2 p recorded for ion-implanted samples indicated splitting of Mn 2 p 1/2 and Mn 2 p 3/2 peaks higher than that for metallic Mn, which helps rule out the possibility of clustering and points to substitutional doping of Mn. These observations provide a framework that sheds light on the local environment of the material for understanding the mechanism of magnetic exchange interactions in Mn:GaN based diluted magnetic semiconductors.

  6. Combined DFT and XPS investigation of iodine anions adsorption on the sulfur terminated (001) chalcopyrite surface

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kui, E-mail: likui9606@stu.xjtu.edu.cn [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Zhao, Yaolin, E-mail: zhaoyaolin@mail.xjtu.edu.cn [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, Peng, E-mail: zp32@qq.com [Sino Shaanxi Nuclear Industry Group, Xi’an 710100 (China); He, Chaohui, E-mail: hechaohui@mail.xjtu.edu.cn [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Deng, Jia, E-mail: djkokocase@stu.xjtu.edu.cn [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Ding, Shujiang, E-mail: dingsj@mail.xjtu.edu.cn [Department of Applied Chemistry, School of Science, Xi’an Jiaotong University, Xi’an 710049 (China); Shi, Weiqun, E-mail: shiwq@ihep.ac.cn [Key Laboratory of Nuclear Radiation and Nuclear Energy Technology and Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2016-12-30

    Highlights: • Metal surface sites of (001)-S surface of chalcopyrite show significant chemical affinity to iodide and iodate. • The energetically favorable active site is copper for iodide adsorption and iron for iodate adsorption, respectively. • Iodate undergoes a dissociative adsorption on the copper site of chalcopyrite surface. - Abstract: The adsorption of iodine anions (iodide and iodate) on the sulfur terminated (001) chalcopyrite surface has been systematically investigated combining first-principles calculations based on density functional theory (DFT) with X-ray photoelectron spectroscopy (XPS) measurements. Based on the total energy calculations and geometric optimization, the thermodynamically preferred site was copper atom for iodide adsorption and iron atom for iodate adsorption, respectively. In the case of Cu site mode, the iodate underwent a dissociative adsorption, where one I−O bond of iodate ion was broken and the dissociative oxygen atom adsorbed on the adjacent sulphur site. Projected density of states (PDOS) analysis further clarified the interaction mechanism between active sites of chalcopyrite surface and adsorbates. In addition, full-range XPS spectra qualitatively revealed the presence of iodine on chalcopyrite surface. High resolution XPS spectra of the I 3d peaks after adsorption verified the chemical environment of iodine. The binding energies of 618.8 eV and 623.5 eV for I 3d{sub 5/2} peaks unveiled that the adsorption of iodide and iodate ions on copper-iron sulfide minerals was the result of formation of low solubility metal iodides precipitate. Also two I 3d peaks with low intensity around 618 eV and 630 eV might be related to the inorganic reduction of iodate to iodide by reducing S{sup 2−} ion of chalcopyrite.

  7. Band offsets in ITO/Ga2O3 heterostructures

    Science.gov (United States)

    Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito

    2017-11-01

    The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be -0.78 ± 0.30 eV, while the conduction band offset was determined to be -0.32 ± 0.13 eV. The ITO/Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors.

  8. Effect of the valence electron concentration on the bulk modulus and chemical bonding in Ta2AC and Zr2AC (A=Al, Si, and P)

    International Nuclear Information System (INIS)

    Schneider, Jochen M.; Music, Denis; Sun Zhimei

    2005-01-01

    We have studied the effect of the valence electron concentration, on the bulk modulus and the chemical bonding in Ta 2 AC and Zr 2 AC (A=Al, Si, and P) by means of ab initio calculations. Our equilibrium volume and the hexagonal ratio (c/a) agree well (within 2.7% and 1.2%, respectively) with previously published experimental data for Ta 2 AlC. The bulk moduli of both Ta 2 AC and Zr 2 AC increase as Al is substituted with Si and P by 13.1% and 20.1%, respectively. This can be understood since the substitution is associated with an increased valence electron concentration, resulting in band filling and an extensive increase in cohesion

  9. Wide Band to ''Double Band'' upgrade

    International Nuclear Information System (INIS)

    Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

    1988-06-01

    The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs

  10. XNAES and XPS studies on modification of SWCNTS upon gas-phase purification treatments

    International Nuclear Information System (INIS)

    Liang Xianqing; Wu Ziyu; Zhong Jun; Zhao Ting; Yao Peng; Ibrahim, K.; Qian Haijie

    2009-01-01

    A systematic characterization of single-walled carbon nanotubes (SWCNTs) after successive purification steps, including air oxidation at 350 degree C, hydrochloric acid etching and 600 degree C annealing in Ar, have been performed combining X-ray absorption near-edge structure (XANES) and X-ray photoelectron spectroscopy (XPS). The results indicated that the modification degree of SWCNTs increased after the purification procedures, but decreased significantly by annealing in Ar. It also showed that the SWCNTs could bond with chlorine atoms during the hydrochloric acid etching and suggested this modification may be importance for the applications. (authors)

  11. Atomic and nuclear analytical methods. XRF, Moessbauer, XPS, NAA and ion-beam spectroscopic techniques

    International Nuclear Information System (INIS)

    Verma, H.R.

    2007-01-01

    This book is a blend of analytical methods based on the phenomenon of atomic and nuclear physics. It comprises comprehensive presentations about X-ray Fluorescence (XRF), Moessbauer Spectroscopy (MS), X-ray Photoelectron Spectroscopy (XPS), Neutron- Activation Analysis (NAA), Particle Induced X-ray Emission Analysis (PIXE), Rutherford Backscattering Analysis (RBS), Elastic Recoil Detection (ERD), Nuclear Reaction Analysis (NRA), Particle Induced Gamma-ray Emission Analysis (PIGE), and Accelerator Mass Spectrometry (AMS). These techniques are commonly applied in the fields of medicine, biology, environmental studies, archaeology or geology et al. and pursued in major international research laboratories. (orig.)

  12. Combined application of XANES and XPS to study oxygen species adsorbed on Ag foil

    CERN Document Server

    Bukhtiyarov, V I; Kaichev, V V; Knop-Gericke, A; Mayer, R W; Schloegl, R

    2001-01-01

    Adsorbed oxygen species realized in the course of ethylene epoxidation over polycrystalline silver have been characterized by X-ray absorption near the edge structure and X-ray photoelectron spectroscopy. Namely, the combined application of XANES and XPS in similar UHV conditions using the same sample allowed us to assign an XAS feature to the nucleophilic and electrophilic oxygen. This is of great significance, since these species are suggested to be included into the active center for ethylene epoxidation. The differences in the oxygen-silver bonding of these oxygen species are discussed.

  13. XPS study on the surface reaction of uranium metal with carbon monoxide at 200 degree C

    International Nuclear Information System (INIS)

    Wang Xiaoling; Fu Yibei; Xie Renshou; Huang Ruiliang

    1996-12-01

    The surface reaction of uranium metal with carbon monoxide at 200 degree C has been studied by X-ray photoelectron spectroscopy (XPS). The carbon monoxide adsorption on the surface oxide layer resulted in U4f peak shifting to the lower binding energy and the content of oxygen in the oxide is decreased. O/U radio decreases with increasing the exposure of carbon monoxide to the surface layer. The investigation indicated the surface layer of uranium metal was further reduced in the atmosphere of carbon monoxide at high temperature. (3 refs., 5 figs.)

  14. XPS and Raman study of zinc containing silica microparticles loaded with insulin

    Energy Technology Data Exchange (ETDEWEB)

    Vanea, E.; Simon, V., E-mail: viorica.simon@phys.ubbcluj.ro

    2013-09-01

    Zinc–silica microparticles obtained by sol–gel method solely or by combining sol–gel chemistry with freeze-drying and spray-drying procedures were explored as potential insulin drug delivery carriers for their improved loading efficiency. Zinc containing silica hosts of different specific surface area and mean pore volume loaded with insulin under similar conditions were investigated by X-ray photoelectron spectroscopy (XPS) and confocal micro-Raman spectroscopy in order to assess the insulin adherence to these matrices and the biologically active state of the insulin after embedding.

  15. XPS response in the corrosion products analysis for copper exposed at clean air environment

    International Nuclear Information System (INIS)

    Mariaca, L.; Morcillo, M.; Feliu Jr, S.; Gonzalez, J.A.

    1998-01-01

    In this work is presented the obtained response for superficial analysis technique by X-ray photoelectron spectroscopy (XPS or ESCA), to determine the corrosion products formed during the copper exposure at environment without pollutants (clean air) at 50, 70 and 90 % of relative humidity at 35 Centigrade. One of the copper corrosion products most knew is Cu 2 O. This oxide is formed instantly to be exposed the copper at air. However in function of the exposure time and the relative humidity at it is exposed, the Cu 2 O oxide is transformed at Cu O and Cu(OH) 2 (Author)

  16. ISS Assessment of the Influence of Nonpore Surface in the XPS Analysis of Oil-Producing Reservoir Rocks

    Science.gov (United States)

    Leon; Toledo; Araujo

    1997-08-15

    The application of X-ray photoelectron spectroscopy (XPS) to oil-producing reservoir rocks is new and has shown that pore surface concentrations can be related to rock wettability. In the preparation of fresh fractures of rocks, however, some nonpore surface corresponding to the connection regions in the rocks is created and exposed to XPS. To assess the potential influence of this nonpore surface in the XPS analysis of rocks here we use ion scattering spectroscopy (ISS), which has a resolution comparable to the size of the pores, higher than that of XPS, with an ion gun of He+ at maximum focus. Sample charging effects are partially eliminated with a flood gun of low energy electrons. All the ISS signals are identified by means of a formula which corrects any residual charging on the samples. Three rock samples are analyzed by XPS and ISS. The almost unchanged ISS spectra obtained at different points of a given sample suggest that the nonpore surface created in the fracture process is negligibly small, indicating that XPS data, from a larger surface spot, represents the composition of true pore surfaces. The significant changes observed in ISS spectra from different samples indicate that ISS is sample specific. Copyright 1997Academic Press

  17. Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction

    International Nuclear Information System (INIS)

    Liu, J. W.; Liao, M. Y.; Cheng, S. H.; Imura, M.; Koide, Y.

    2013-01-01

    CaF 2 films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF 2 /H-diamond heterojunction are investigated by X-ray photoelectron spectroscopy. It is confirmed that there are only C-Ca bonds at the CaF 2 /H-diamond heterointerface. Valence and conductance band offsets of the CaF 2 /H-diamond heterojunciton are determined to be 3.7 ± 0.2 and 0.3 ± 0.2 eV, respectively. It shows a type I straddling band configuration. The large valence band offset suggests advantage of the CaF 2 /H-diamond heterojunciton for the development of high power and high frequency field effect transistors.

  18. In-clustering induced anomalousbehavior of band gap in InAlN and InGaN

    DEFF Research Database (Denmark)

    Gorczyca, I.; Suski, T.; Christensen, Niels Egede

    2010-01-01

    Electronic band structure calculations of In containing ternary nitride alloys are presented showing a strong modification of the band gap, EG and its pressure coefficient, dEG/dp, as a function of In-content. Two different arrangements of In atoms are considered: uniform and clustered. It is shown...... that Indium clustering is the additional, large factor leading to the unusual bowings of the band gaps and their pressure coefficients. The theoretical results are compared with experimental data on variations of EG with In content. In the analysis of observed phenomena we point out the particular role...... of the uppermost valence band....

  19. Measurement of ZnO/Al2O3 Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy

    International Nuclear Information System (INIS)

    Lei Hong-Wen; Zhang Hong; Wang Xue-Min; Zhao Yan; Yan Da-Wei; Jiang Zhong-Qian; Yao Gang; Zeng Ti-Xian; Wu Wei-Dong

    2013-01-01

    ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy. The band offsets of the ZnO/Al 2 O 3 heterojunction are studied by in situ x-ray photoelectron spectroscopy. The valence band of Al 2 O 3 is found to be 3.59±0.05eV below that of ZnO. Together with the resulting conduction band offset of 2.04±0.05eV, this indicates that a type-I staggered band line exists at the ZnO/Al 2 O 3 heterojunction

  20. Kondo and mixed-valence regimes in multilevel quantum dots

    International Nuclear Information System (INIS)

    Chudnovskiy, A. L.; Ulloa, S. E.

    2001-01-01

    We investigate the dependence of the ground state of a multilevel quantum dot on the coupling to an external fermionic system and on the interactions in the dot. As the coupling to the external system increases, the rearrangement of the effective energy levels in the dot signals the transition from the Kondo regime to a mixed-valence (MV) regime. The MV regime in a two-level dot is characterized by an intrinsic mixing of the levels in the dot, resulting in nonperturbative subtunneling and supertunneling phenomena that strongly influence the Kondo effect

  1. Amniotic constriction bands

    Science.gov (United States)

    ... Supplements Videos & Tools Español You Are Here: Home → Medical Encyclopedia → Amniotic band sequence URL of this page: //medlineplus.gov/ency/ ... birth. The baby should be delivered in a medical center that has specialists experienced in caring for babies ... or partial loss of function of a body part. Congenital bands affecting large parts of the body cause the ...

  2. Ab initio calculation of band alignment of epitaxial La2O3 on Si(111 substrate

    Directory of Open Access Journals (Sweden)

    Alberto Debernardi

    2015-08-01

    Full Text Available By means of plane wave pseudopotential method we have studied the electronic properties of the heterostructure formed by an high dielectric constant (k oxide, the hexagonal La2O3 epitaxially grown with (0001-orientation on Si (111 substrate. We found that for La2O3 both the dielectric constant along the growth direction and the band gap are larger in the epitaxial film than in the bulk. By super-cell techniques we have computed the band alignment of the junction finding a valence band offset and a conduction band offset of ~1.6 eV and ~1.7 eV respectively. We demonstrate that the band alignment can be engineered by δ-doping the interface: our simulations show that, by doping the interface with S or Se monolayer, the valence (conduction band offset increases (decreases of about 0.5 eV without the formation of spurious electronic states in the semiconductor band-gap. The simulation of the critical thickness of pseudomorphic Lanthana film complete the work. Our results are relevant for the realization of a new generation of devices based on ultra-scaled complementary metal oxides semiconductors (CMOS technology.

  3. Madelung and Hubbard interactions in polaron band model of doped organic semiconductors

    Science.gov (United States)

    Png, Rui-Qi; Ang, Mervin C.Y.; Teo, Meng-How; Choo, Kim-Kian; Tang, Cindy Guanyu; Belaineh, Dagmawi; Chua, Lay-Lay; Ho, Peter K.H.

    2016-01-01

    The standard polaron band model of doped organic semiconductors predicts that density-of-states shift into the π–π* gap to give a partially filled polaron band that pins the Fermi level. This picture neglects both Madelung and Hubbard interactions. Here we show using ultrahigh workfunction hole-doped model triarylamine–fluorene copolymers that Hubbard interaction strongly splits the singly-occupied molecular orbital from its empty counterpart, while Madelung (Coulomb) interactions with counter-anions and other carriers markedly shift energies of the frontier orbitals. These interactions lower the singly-occupied molecular orbital band below the valence band edge and give rise to an empty low-lying counterpart band. The Fermi level, and hence workfunction, is determined by conjunction of the bottom edge of this empty band and the top edge of the valence band. Calculations are consistent with the observed Fermi-level downshift with counter-anion size and the observed dependence of workfunction on doping level in the strongly doped regime. PMID:27582355

  4. Fluorescence properties of valence-controlled Eu{sup 2+} and Mn{sup 2+} ions in aluminosilicate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Van Tuyen, Ho [Duy Tan University, 3 Quang Trung, Hai Chau, Da Nang (Viet Nam); Nonaka, Takamasa; Yamanaka, Ken-ichi [Toyota Central R& D Labs., Inc., Nagakute, Aichi (Japan); Chau, Pham Minh; Quy Hai, Nguyen Thi; Quang, Vu Xuan [Duy Tan University, 3 Quang Trung, Hai Chau, Da Nang (Viet Nam); Nogami, Masayuki, E-mail: mnogami@mtj.biglobe.ne.jp [Toyota Physical and Chemical Research Institute, Nagakute, Aichi (Japan); Ton Duc Thang University, Ho Chi Minh City (Viet Nam); Duy Tan University, 3 Quang Trung, Hai Chau, Da Nang (Viet Nam)

    2017-04-15

    Controlling of valence states of metal ions doped in glasses has attracted considerable interest due to the possibility of looking toward optical applications. In this study, new Na{sub 2}O-Al{sub 2}O{sub 3}-SiO{sub 2} glasses were developed to dope Eu{sup 2+} and Mn{sup 2+} with well controlled valence states by heating in H{sub 2} gas atmosphere, and the changes in the valence state of doped-ions and their fluorescence properties were investigated using visible and infrared optical absorption spectroscopies, X-ray absorption fine structure spectroscopy, and fluorescence spectroscopy. Among Eu{sup 3+}, Mn{sup 3+} and Mn{sup 2+} ions incorporated in the as-prepared glasses, the Eu{sup 3+} and Mn{sup 3+} ions were reduced to Eu{sup 2+} and Mn{sup 2+} ions, respectively, by heating in H{sub 2} gas and OH bonds were concurrently formed. The fluorescence spectra of glasses heated in H{sub 2} exhibited broad emission bands at 450 and 630 nm wavelength, assigned to the Eu{sup 2+} and Mn{sup 2+}, respectively, ions, in which the fluorescence intensity at 450 nm was observed to decrease with increasing Mn{sup 2+} ion content. The increased fluorescence intensities were analyzed as the energy transfer from Eu{sup 2+} to Mn{sup 2+} ions and the energy transfer efficiency was estimated with a concentration of Eu{sup 2+}and Mn{sup 2+} ions.

  5. Electron band bending of polar, semipolar and non-polar GaN surfaces

    Czech Academy of Sciences Publication Activity Database

    Bartoš, Igor; Romanyuk, Olexandr; Houdková, Jana; Paskov, P.P.; Paskova, T.; Jiříček, Petr

    2016-01-01

    Roč. 119, č. 10 (2016), 1-7, č. článku 105303. ISSN 0021-8979 R&D Projects: GA ČR GA15-01687S Grant - others:AVČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : GaN * XPS * band bending Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.068, year: 2016

  6. Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

    Science.gov (United States)

    Guo, Yuzheng; Robertson, John

    2017-09-01

    We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.

  7. Band alignment and defects of the diamond zinc oxide heterojunction; Bandstruktur und Defekte der Diamant-Zinkoxid-Heterostruktur

    Energy Technology Data Exchange (ETDEWEB)

    Geithner, Peter

    2008-09-12

    Zinc oxide films were grown on diamond single crystals by rf sputtering of zinc oxide. The valence and conduction band offset was determined by photoelectron spectroscopy. A deep defect occurring in the zinc oxide films on diamond was characterized by cathodoluminescence spectroscopy. (orig.)

  8. Synchrotron Studies of Narrow Band and Low-Dimensional Materials. Final Report for July 1, 1990 --- December 31, 2002

    International Nuclear Information System (INIS)

    Allen, J. W.

    2003-01-01

    This report summarizes a 12-year program of various kinds of synchrotron spectroscopies directed at the electronic structures of narrow band and low-dimensional materials that display correlated electron behaviors such as metal-insulator transitions, mixed valence, superconductivity, Kondo moment quenching, heavy Fermions, and non-Fermi liquid properties

  9. Spectroellipsometric, AFM and XPS probing of stainless steel surfaces subjected to biological influences

    Science.gov (United States)

    Vinnichenko, M.; Chevolleau, Th; Pham, M. T.; Poperenko, L.; Maitz, M. F.

    2002-11-01

    Surface modification of austenitic stainless steel (SS) 316L after incubation in growing cell cultures and cell-free media as control has been studied. The following treatments were applied: mouse fibrosarcoma cells L929 for 3 and 7 days, polymorphonuclear neutrophils for 3 and 7 days and human osteosarcoma cells SAOS-2 for 7 and 14 days. Cells were enzymatically removed in all cases. The modified surfaces were probed in comparison with untreated ones by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS shows the appearance of the peak of bonded nitrogen at 400.5 eV characteristic for adsorbed proteins on the surface for each type of cells and for the cell-free medium. Migration of Ni in the adsorbed layer is observed in all cases for samples after the cell cultures. The protein layer thickness is ellipsometrically determined to be within 2.5-6.0 nm for all treated samples with parameterization of its optical constants in Cauchy approach. The study showed that for such biological treatments of the SS the protein layer adsorption is the dominating process in the first 2 weeks, which could play a role in the process of corrosion by complex forming properties with metal ions.

  10. Spectroellipsometric, AFM and XPS probing of stainless steel surfaces subjected to biological influences

    International Nuclear Information System (INIS)

    Vinnichenko, M.; Chevolleau, Th.; Pham, M.T.; Poperenko, L.; Maitz, M.F.

    2002-01-01

    Surface modification of austenitic stainless steel (SS) 316L after incubation in growing cell cultures and cell-free media as control has been studied. The following treatments were applied: mouse fibrosarcoma cells L929 for 3 and 7 days, polymorphonuclear neutrophils for 3 and 7 days and human osteosarcoma cells SAOS-2 for 7 and 14 days. Cells were enzymatically removed in all cases. The modified surfaces were probed in comparison with untreated ones by means of spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS shows the appearance of the peak of bonded nitrogen at 400.5 eV characteristic for adsorbed proteins on the surface for each type of cells and for the cell-free medium. Migration of Ni in the adsorbed layer is observed in all cases for samples after the cell cultures. The protein layer thickness is ellipsometrically determined to be within 2.5-6.0 nm for all treated samples with parameterization of its optical constants in Cauchy approach. The study showed that for such biological treatments of the SS the protein layer adsorption is the dominating process in the first 2 weeks, which could play a role in the process of corrosion by complex forming properties with metal ions

  11. Characterization of Desulfovibrio desulfuricans biofilm on high-alloyed stainless steel: XPS and electrochemical studies

    Energy Technology Data Exchange (ETDEWEB)

    Dec, Weronika [Institute of Industrial Organic Chemistry, Branch Pszczyna, Doświadczalna Street 27, 43-200 Pszczyna (Poland); Mosiałek, Michał; Socha, Robert P. [Jerzy Haber Institute of Catalysis and Surface Chemistry PAS, Niezapominajek Street 8, 30-239 Kraków (Poland); Jaworska-Kik, Marzena [Department of Biopharmacy, Medical University of Silesia, Jedności Street 8, 41-200 Sosnowiec (Poland); Simka, Wojciech [Faculty of Chemistry, Silesian University of Technology, B. Krzywoustego 6 Street, 44-100 Gliwice (Poland); Michalska, Joanna, E-mail: joanna.k.michalska@polsl.pl [Faculty of Chemistry, Silesian University of Technology, B. Krzywoustego 6 Street, 44-100 Gliwice (Poland)

    2017-07-01

    Results on D. desulfuricans biofilm formation on austenitic-ferritic duplex (2205 DSS) and superaustenitic (904L) stainless steels are presented. Surface characterization including the structure, configuration and chemical composition of biofilms were carried out using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Electrochemical impedance spectroscopy (EIS) measurements were used to monitor the attachment activity of bacteria on the steels' surface and to determine the effect of bacteria on passivity. It was proved that investigated steels are rapidly colonized by bacteria. The presence of biofilm caused significant ennoblement of 904L steel surface, while retarded the attainment of high passive state of 2205 DSS. XPS analysis revealed significant sulphidation of the biofilm and its layered structure. Accumulation of sulphides and hydroxides was proved in the outermost layer, while the increasing contents of disulphides, organometallic and C-N bonds were detected in the internal part of the biofilm. Irreversible bondings between steel matrix and biofilm had also been observed. - Highlights: • High-alloyed steels are rapidly colonized by sulphate-reducing bacteria. • Higher Ni content stimulates more intensive biofilm growth. • Extracellular polymeric substances indelibly bind to the high-alloyed steels. • Sulphate-reducing bacteria caused irreversible sulphidation of passive films.

  12. Structural, optical, XPS and magnetic properties of Zn particles capped by ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Morozov, Iu.G., E-mail: yugmor@hotmail.com [Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences, Academician Osipyan Street 8, Chernogolovka, Moscow Region 142432 (Russian Federation); Belousova, O.V. [Institute of Structural Macrokinetics and Materials Science, Russian Academy of Sciences, Academician Osipyan Street 8, Chernogolovka, Moscow Region 142432 (Russian Federation); Ortega, D., E-mail: daniel.ortega@imdea.org [Instituto Madrileño de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Cantoblanco 28049, Madrid (Spain); Mafina, M.-K., E-mail: m.k.mafina@qmul.ac.uk [School of Engineering and Materials Science, Queen Mary University of London, Mile End, Eng, 231, London E1 4NS (United Kingdom); Kuznetcov, M.V., E-mail: maxim1968@mail.ru [Department of Chemistry, Materials Chemistry Research Centre, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom)

    2015-06-05

    Highlights: • Levitation-jet aerosol synthesis of Zn particles capped by ZnO nanoparticles (NPs). • TEM, XRD, UV–vis, FT-IR, Raman, XPS and magnetic characterization of the NPs. • Correlation between unit-cell volume of crystal lattice and maximum magnetization. - Abstract: Spherical zinc particles ranging from 42 to 760 nm in average size and capped with plate-like zinc oxide particles of 10–30 nm in sizes have been prepared by levitation-jet aerosol synthesis through condensation of zinc vapor in an inert/oxidizer gas flow. The nanoparticles have been characterized by transmission electron microscopy (TEM), X-ray diffraction (XRD), BET measurements, ultra violet visible (UV–vis) spectroscopy, Fourier transform infrared (FT-IR) spectroscopy, Raman spectroscopy, X-ray electron spectroscopy (XPS), superconducting quantum interference device (SQUID), and vibrating-sample magnetometer (VSM). Magnetic and XRD data indicate that the observed ferromagnetic ordering related to the changes in unit-cell volume of Zn in the Zn/ZnO interface of the nanoparticles. These results are in good correlation with the optical measurements data.

  13. XPS and FTIR spectroscopic study on microwave treated high phosphorus iron ore

    International Nuclear Information System (INIS)

    Omran, Mamdouh; Fabritius, Timo; Elmahdy, Ahmed M.; Abdel-Khalek, Nagui A.; El-Aref, Mortada; Elmanawi, Abd El-Hamid

    2015-01-01

    Highlights: • The effect of microwave radiation on structure and chemical state of high phosphorus iron ore was studied. • FTIR analyses showed that after microwave radiation the functional chemical groups of phosphorus bearing minerals (fluorapatite) dissociated. • High resolution XPS analyses of Fe 2p peaks showed that after microwave radiation a portion of Fe(+III) was reduced to Fe(+II). • Microwave radiation had a positive effect on the magnetic properties of iron oxide, through formation of ferromagnetic phases. - Abstract: A growing interest in microwave heating has emerged recently. Several potential microwave applications regarding minerals’ processing have been investigated. This paper investigates the effect of microwave radiation on Egyptian high phosphorus iron ore. Three different iron ore samples have varying Fe 2 O 3 and P 2 O 5 contents and mineralogical textures were studied. A comparative study has been carried out between untreated and microwave treated iron ore. XRD and FTIR analyses showed that after microwave radiation the crystallinity of iron bearing minerals (hematite) increased, while the functional chemical groups of phosphorus bearing minerals (fluorapatite) and other gangues dissociated. High resolution XPS analyses of Fe 2p peaks showed that after microwave radiation a portion of Fe(+III) was reduced to Fe(+II). This means that after microwave radiation iron oxide (hematite, Fe 3+ ) transformed into more magnetic phase. The results indicated that microwave radiation had a positive effect on the magnetic properties of iron oxide, through formation of ferromagnetic phases

  14. XPS/STM study of model bimetallic Pd–Au/HOPG catalysts

    Energy Technology Data Exchange (ETDEWEB)

    Bukhtiyarov, Andrey V., E-mail: avb@catalysis.ru [Boreskov Institute of Catalysis, Lavrentieva Ave. 5, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova str. 2, 630090 Novosibirsk (Russian Federation); Prosvirin, Igor P., E-mail: prosvirin@catalysis.ru [Boreskov Institute of Catalysis, Lavrentieva Ave. 5, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova str. 2, 630090 Novosibirsk (Russian Federation); Bukhtiyarov, Valerii I., E-mail: vib@catalysis.ru [Boreskov Institute of Catalysis, Lavrentieva Ave. 5, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova str. 2, 630090 Novosibirsk (Russian Federation)

    2016-03-30

    Graphical abstract: - Highlights: • The model Pd–Au/HOPG catalysts preparation has been studied by XPS and STM. • Model “core–shell” type Pd–Au/HOPG catalysts with different Pd/Au ratios were prepared. • Heating of the “core–shell” Pd–Au/HOPG samples up to 400 °C leads to alloy formation. • Contribution of parameters controlling the properties of Pd–Au alloyed particles has been discussed. - Abstract: The preparation of model bimetallic Pd–Au/HOPG catalysts has been investigated using scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) techniques. Initially, model “core–shell” type Pd–Au/HOPG catalysts with similar particle size distribution (5–8 nm), but with different densities of particle locations on the HOPG surface and Pd/Au atomic ratios are prepared. Further, their thermal stability is studied within a temperature range of 50–500 °C at UHV conditions. It has been shown that annealing the model catalysts at a temperature range of 300–400 °C leads to formation of Pd–Au alloyed particles. Enhancement of heating temperature up to 500 °C results in sintering of bimetallic nanoparticles. Contribution of different parameters controlling the properties of Pd–Au alloyed particles has been discussed.

  15. The effect of particle-hole interaction on the XPS core-hole spectrum

    International Nuclear Information System (INIS)

    Ohno, Masahide; Sjoegren, Lennart

    2004-01-01

    How the effective particle-hole interaction energy, U, or the polarization effect on a secondary electron in a final two-hole one-particle (2h1p) state created by the Coster-Kronig (CK) transition can solely affect the density of the CK particle states and consequently the core-hole spectral function, is discussed. The X-ray photoelectron spectroscopy (XPS) core-hole spectrum is predominantly governed by the unperturbed initial core-hole energy relative to the zero-point energy. At the latter energy, the real part of the initial core-hole self-energy becomes zero (no relaxation energy shift) and the imaginary part (the lifetime broadening) approximately maximizes. The zero-point energy relative to the double-ionization threshold energy is governed by the ratio of U relative to the bandwidth of the CK continuum. As an example, we study the 5p XPS spectra of atomic Ra (Z=88), Th (Z=90) and U (Z=92). The spectra are interpreted in terms of the change in the unperturbed initial core-hole energy relative to the zero-point energy. We explain why in general an ab initio atomic many-body calculation can provide an overall good description of solid-state spectra predominantly governed by the atomic-like localized core-hole dynamics. We explain this in terms of the change from free atom to metal in both U and the zero-point energy (self-energy)

  16. XPS analysis of the carbon fibers surface modified via HMDSO to carbon nanotube growth

    Energy Technology Data Exchange (ETDEWEB)

    Cardoso, L.D.R.; Gomes, M.C.B.; Trava-Airoldi, V.J.; Corat, E.J.; Lugo, D.C. [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2016-07-01

    Full text: Carbon fibers (CF) have been widely used to reinforce structural composites. Due to their strength-to-weight properties, CF composites are finding increased structural uses in areas such as aerospace, aeronautical, automobile and others. The strength of the fiber-resin interface bond has been found to be the limiting factor to the mechanical properties of CF-epoxy materials, due to their non-polar nature that limit the affinity of CF to bind chemically to any matrix. The growth of carbon nanotubes (CNTs) on the surface of CF is a promising approach for improving mechanical, electrical and thermal properties of structural composites. However growing CNTs on CF presents some obstacles, such as diffusion of metal catalyst particles on CF, uneven CNT growth and loss of mechanical properties of CF. To avoid the diffusion of catalyst particles we modified the CF surface with hexamethyldisiloxane (HMDSO) at low temperature (400 °C), also preventing the loss of mechanical properties and allowing uniform CNTs growth. We deposited CNTs via floating catalyst method, with ferrocene providing the catalyst particle and the oxidative dehydrogenation reaction of acetylene providing the carbon. The CF surface modification was analyzed via X-ray photoelectron spectroscopy (XPS) and CNTs growth via scanning electron microscopy with field emission gun. The XPS analysis showed that HMDSO promotes the binding of oxygen to carbon and silicon present on CF surface, the chemical modification of the surface of the CF enables the uniform growth of carbon nanotubes. (author)

  17. An XPS round robin investigation on analysis of wood pulp fibres and filter paper

    Science.gov (United States)

    Johansson, Leena-Sisko; Campbell, J. M.; Fardim, Pedro; Hultén, Anette Heijnesson; Boisvert, Jean-Philippe; Ernstsson, Marie

    2005-06-01

    X-ray photoelectron spectroscopy (XPS) has been applied to pulp and paper research for decades. However, there has been no attempt to standardise or even systematically compare experimental and analysis procedures, even though it is known that fibrous, nature-derived and insulating fibre materials pose remarkable challenges to reliable surface analysis. The experimental problems are mainly linked with neutralisation, energy resolution, contamination and X-ray induced degradation. We have tested applicability, reliability and reproducibility of XPS analysis on real pulp samples with varying lignin and extractives contents in a small round robin investigation. We also tested the instrumental set-ups with an acetone-extracted filter paper, used as a reference sample. The data, collected at four different laboratories with state-of-the-art instruments indicate that reproducible results can be obtained, despite minor differences in experimental and analysis procedures. However, we found that a specified sample handling procedure and limited X-ray exposure are crucial for reproducible, reliable data. Based on the round robin data we recommend dose restricted monochromatic measurements, a cellulosic in situ reference and a consistent sample handling procedure. The data confirms that a paper-based reference material and the correlation of high-resolution C 1s data with O/C atomic ratios can be used in testing instruments and experimental set-ups for pulp and paper materials.

  18. Formation of complexes between functionalized chitosan membranes and copper: A study by angle resolved XPS

    Energy Technology Data Exchange (ETDEWEB)

    Jurado-López, Belén [Departamento de Química Inorgánica, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain); Vieira, Rodrigo Silveira [Chemical Engineering Department, Universidade Federal do Ceará, UFC, 60455-760 Fortaleza, CE (Brazil); Rabelo, Rodrigo Balloni; Beppu, Marisa Masumi [School of Chemical Engineering, University of Campinas, UNICAMP, P.O. Box 6066, 13081-970 Campinas, SP (Brazil); Casado, Juan [Departamento de Química-Física, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain); Rodríguez-Castellón, Enrique, E-mail: castellon@uma.es [Departamento de Química Inorgánica, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain)

    2017-01-01

    Chitosan is a biopolymer with potential applications in various fields. Recently, it has been used for heavy metals removal like copper, due to the presence of amino and hydroxyl groups in its structure. Chitosan membranes were crosslinked with epichlorohydrin and bisoxirano and functionalized with chelating agents, such as iminodiacetic acid, aspartic acid and tris-(2-amino-ethyl) polyamine. These membranes were used for copper adsorption and the formed complexes were characterized. Thermal and crystalline properties of chitosan membranes were studied by TG-DCS and X-ray diffraction. Raman, XPS and FT-IR data confirmed that copper is linked to the modified chitosan membranes by the amino groups. The oxidation state of copper-chitosan membranes were also studied by angle resolved XPS, and by UV–Vis diffuse reflectance spectroscopy. - Highlights: • Chitosan membranes were crosslinked with epichlorohydrin and bisoxirano and functionalized with chelating agents. • The chelating agent were iminodiacetic acid, aspartic acid and tris-(2-amino-ethyl) polyamine. • The functionalized membranes were used for copper adsorption and studied by ARXPS, Raman, TG-DCS, FT-IR and XRD. • Spectroscopic data confirmed that copper is linked to the modified chitosan membranes by the amino groups.

  19. Characterization of Desulfovibrio desulfuricans biofilm on high-alloyed stainless steel: XPS and electrochemical studies

    International Nuclear Information System (INIS)

    Dec, Weronika; Mosiałek, Michał; Socha, Robert P.; Jaworska-Kik, Marzena; Simka, Wojciech; Michalska, Joanna

    2017-01-01

    Results on D. desulfuricans biofilm formation on austenitic-ferritic duplex (2205 DSS) and superaustenitic (904L) stainless steels are presented. Surface characterization including the structure, configuration and chemical composition of biofilms were carried out using scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS). Electrochemical impedance spectroscopy (EIS) measurements were used to monitor the attachment activity of bacteria on the steels' surface and to determine the effect of bacteria on passivity. It was proved that investigated steels are rapidly colonized by bacteria. The presence of biofilm caused significant ennoblement of 904L steel surface, while retarded the attainment of high passive state of 2205 DSS. XPS analysis revealed significant sulphidation of the biofilm and its layered structure. Accumulation of sulphides and hydroxides was proved in the outermost layer, while the increasing contents of disulphides, organometallic and C-N bonds were detected in the internal part of the biofilm. Irreversible bondings between steel matrix and biofilm had also been observed. - Highlights: • High-alloyed steels are rapidly colonized by sulphate-reducing bacteria. • Higher Ni content stimulates more intensive biofilm growth. • Extracellular polymeric substances indelibly bind to the high-alloyed steels. • Sulphate-reducing bacteria caused irreversible sulphidation of passive films.

  20. XPS analysis of the carbon fibers surface modified via HMDSO to carbon nanotube growth

    International Nuclear Information System (INIS)

    Cardoso, L.D.R.; Gomes, M.C.B.; Trava-Airoldi, V.J.; Corat, E.J.; Lugo, D.C.

    2016-01-01

    Full text: Carbon fibers (CF) have been widely used to reinforce structural composites. Due to their strength-to-weight properties, CF composites are finding increased structural uses in areas such as aerospace, aeronautical, automobile and others. The strength of the fiber-resin interface bond has been found to be the limiting factor to the mechanical properties of CF-epoxy materials, due to their non-polar nature that limit the affinity of CF to bind chemically to any matrix. The growth of carbon nanotubes (CNTs) on the surface of CF is a promising approach for improving mechanical, electrical and thermal properties of structural composites. However growing CNTs on CF presents some obstacles, such as diffusion of metal catalyst particles on CF, uneven CNT growth and loss of mechanical properties of CF. To avoid the diffusion of catalyst particles we modified the CF surface with hexamethyldisiloxane (HMDSO) at low temperature (400 °C), also preventing the loss of mechanical properties and allowing uniform CNTs growth. We deposited CNTs via floating catalyst method, with ferrocene providing the catalyst particle and the oxidative dehydrogenation reaction of acetylene providing the carbon. The CF surface modification was analyzed via X-ray photoelectron spectroscopy (XPS) and CNTs growth via scanning electron microscopy with field emission gun. The XPS analysis showed that HMDSO promotes the binding of oxygen to carbon and silicon present on CF surface, the chemical modification of the surface of the CF enables the uniform growth of carbon nanotubes. (author)

  1. Rotary friction welding of dissimilar joints and bonding interface characterization by EDX and XPS

    Energy Technology Data Exchange (ETDEWEB)

    Alves, Eder Paduan; Dollinger, Christian Avila [Instituto de Aeronautica e Espaco (IAE), Sao Jose dos Campos, SP (Brazil); Marcuzzo, Jossano Saldanha; Baldan, Mauricio Ribeiro; Toledo, Rafael Cardoso; Piorino Neto, Francisco; An, Chen Ying, E-mail: eder.padua@yahoo.com.br [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

    2016-07-01

    Full text: Welding of dissimilar materials has been a challenge to engineering. The study and development of new union processes that meet the requirements of projects in the aerospace, nuclear and aviation sector are of great importance to the scientific and productive means. The Rotary friction welding process (RFW) is a process of union that occurs in the solid state, without occurrence of fusion between the parties, and that have like the main bonding mechanisms the diffusion and mechanical mixture. This work has as objective the obtaining of dissimilar joints involving AA 6351-T6 alloy and stainless steel AISI 304l for applications in the aerospace area. The joints obtained by RFW who had procedures and qualified welding process have undergone the techniques of Energy Dispersive X-Ray Spectroscopy (EDX) and X-Ray Photoelectron Spectroscopy (XPS) for analysis of the bonding interface. Were obtained joints with superior mechanical properties the AA 6351-T6 alloy, with the fracture occurring in aluminum away from the bonding interface. The analyses carried out by EDX and XPS have shown the occurrence of interdiffusion among the main elements of the materials involved. The Rotary friction welding process proved to be a great method for obtaining of joints between dissimilar materials that are not possible by fusion welding processes. (author)

  2. Rotary friction welding of dissimilar joints and bonding interface characterization by EDX and XPS

    International Nuclear Information System (INIS)

    Alves, Eder Paduan; Dollinger, Christian Avila; Marcuzzo, Jossano Saldanha; Baldan, Mauricio Ribeiro; Toledo, Rafael Cardoso; Piorino Neto, Francisco; An, Chen Ying

    2016-01-01

    Full text: Welding of dissimilar materials has been a challenge to engineering. The study and development of new union processes that meet the requirements of projects in the aerospace, nuclear and aviation sector are of great importance to the scientific and productive means. The Rotary friction welding process (RFW) is a process of union that occurs in the solid state, without occurrence of fusion between the parties, and that have like the main bonding mechanisms the diffusion and mechanical mixture. This work has as objective the obtaining of dissimilar joints involving AA 6351-T6 alloy and stainless steel AISI 304l for applications in the aerospace area. The joints obtained by RFW who had procedures and qualified welding process have undergone the techniques of Energy Dispersive X-Ray Spectroscopy (EDX) and X-Ray Photoelectron Spectroscopy (XPS) for analysis of the bonding interface. Were obtained joints with superior mechanical properties the AA 6351-T6 alloy, with the fracture occurring in aluminum away from the bonding interface. The analyses carried out by EDX and XPS have shown the occurrence of interdiffusion among the main elements of the materials involved. The Rotary friction welding process proved to be a great method for obtaining of joints between dissimilar materials that are not possible by fusion welding processes. (author)

  3. EXAFS and XPS Study of Rutile-Type Difluorides of First-Row Transition Metals

    International Nuclear Information System (INIS)

    Murai, Kei-ichiro; Suzuki, Yohei; Moriga, Toshihiro; Yoshiasa, Akira

    2007-01-01

    Although most rutile-type difluorides (MnF2, CoF2 and NiF2) have a positive thermal expansion coefficient, FeF2 has a negative thermal expansion (NTE) along the c-axis in the high temperature region. In this study, we give an explanation of that behavior with Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Photoelectron Spectroscopy (XPS) techniques. From EXAFS results, it has become apparent that the length of the share-edge (Fe-Fe) of FeF6 octahedra increased with the rise of temperature in the high temperature region. We have revealed that the force constant between nearest neighbor atoms (Fe-F) was much larger than that between second-nearest neighbor atoms (Fe-Fe) in FeF2. In XPS measurements, it was discovered that the peak of F 1s of FeF2 was located at the lowest binding energy position as compared to that of other difluorides. This means that the charge density around the F atom in FeF2 was higher than that in other difluorides. It follows from this that the share-edge repulsive force in FeF2 is larger than that in other difluorides. On account of the large repulsive force and the large force constant between nearest neighbor atoms, Fe atoms are attracted to share-edge with the rise of temperature

  4. Band termination in the N=Z nucleus 44Ti

    International Nuclear Information System (INIS)

    Ur, C.A.; Lenzi, S.M.; Martinez-Pinedo, G.

    1998-01-01

    Nuclei in the vicinity of the middle of the 1f 7/2 shell show strong prolate deformation at low spins resulting in rotational-like band structures. With increasing angular momentum the structure of these nuclei evolves through triaxial and spherical shapes. Recently, band terminating states corresponding to fully aligned configurations of valence nucleons in the f 7/2 shell have been reported. Further increase of the angular momentum can be achieved by particle excitations on the higher shell. This will result in high energy γ-ray transitions as it was observed in 50 Cr. We have investigated the structure of 44 Ti up to the band termination. Excited states in 44 Ti have been populated via the 28 Si + 24 Mg at 110 MeV beam energy. The target consisted of ∼0.5 mg/cm 2 of 24 Mg deposited on a gold backing. Gamma-rays were detected with the GASP multidetector array composed by 40 HPGe Compton-suppressed detectors and the inner ball built of 80 BGO detectors. The preliminary level scheme of 44 Ti, as determined in our work, is presented. This nucleus has 2 valence protons and 2 valence neutrons filling the f 7/2 shell. The band terminating state corresponding to their total alignment is the 12 + state. Several γ-rays transitions above this state have been identified. Also, we have identified two negative parity bands strongly connected to the yrast positive parity structure. Such structures have also been observed in other two even-even N=Z nuclei in the f 7/2 shell, namely, 44 Cr and 52 Fe, but they were less populated. The structure of 44 Ti is also interesting from the point of view of the cross-conjugate symmetry. Comparing the level structure of 44 Ti and the one of its cross-conjugate nucleus at the other end of the shell, 52 Fe, it can be noticed that up to spin 10ℎ their structure is very similar, but in 44 Ti the band terminating state 12 + is not below the 10 + state as in the case of 52 Fe. This was related to a reminiscent degree of collectivity in the

  5. Processing negative valence of word pairs that include a positive word.

    Science.gov (United States)

    Itkes, Oksana; Mashal, Nira

    2016-09-01

    Previous research has suggested that cognitive performance is interrupted by negative relative to neutral or positive stimuli. We examined whether negative valence affects performance at the word or phrase level. Participants performed a semantic decision task on word pairs that included either a negative or a positive target word. In Experiment 1, the valence of the target word was congruent with the overall valence conveyed by the word pair (e.g., fat kid). As expected, response times were slower in the negative condition relative to the positive condition. Experiment 2 included target words that were incongruent with the overall valence of the word pair (e.g., fat salary). Response times were longer for word pairs whose overall valence was negative relative to positive, even though these word pairs included a positive word. Our findings support the Cognitive Primacy Hypothesis, according to which emotional valence is extracted after conceptual processing is complete.

  6. Virtual Distance and Soundstage, and their Impacts on Experienced Emotional Valence

    DEFF Research Database (Denmark)

    Christensen, Justin

    2015-01-01

    stimuli should cause stronger valenced responses in the nearfield than at a distance. Thus, music experienced as being negatively valenced at a distance should be more negatively valenced in nearfield, and music that is experienced as having a positive valence at a distance should be more positively......Research from animal ethology and affective neuroscience suggest that a listener’s perceived distance from a signal source can alter their experienced emotional valence of the music. Furthermore, appraisal theories of emotion suggest that emotionally valenced responses will diverge according...... to the type of emotion presented. For these exploratory investigations, subjects listen to selected musical excerpts on speakers in combination with a tactile transducer attached to their chair. The listening sessions are recorded on EEG supported by subject feedback responses. My hypothesis is that musical...

  7. Visuospatial asymmetries and emotional valence influence mental time travel.

    Science.gov (United States)

    Thomas, Nicole A; Takarangi, Melanie K T

    2018-06-01

    Spatial information is tightly intertwined with temporal and valence-based information. Namely, "past" is represented on the left, and "future" on the right, along a horizontal mental timeline. Similarly, right is associated with positive, whereas left is negative. We developed a novel task to examine the effects of emotional valence and temporal distance on mental representations of time. We compared positivity biases, where positive events are positioned closer to now, and right hemisphere emotion biases, where negative events are positioned to the left. When the entire life span was used, a positivity bias emerged; positive events were closer to now. When timeline length was reduced, positivity and right hemisphere emotion biases were consistent for past events. In contrast, positive and negative events were equidistant from now in the future condition, suggesting positivity and right hemisphere emotion biases opposed one another, leading events to be positioned at a similar distance. We then reversed the timeline by moving past to the right and future to the left. Positivity biases in the past condition were eliminated, and negative events were placed slightly closer to now in the future condition. We conclude that an underlying left-to-right mental representation of time is necessary for positivity biases to emerge for past events; however, our mental representations of future events are inconsistent with positivity biases. These findings point to an important difference in the way in which we represent the past and the future on our mental timeline. (PsycINFO Database Record (c) 2018 APA, all rights reserved).

  8. The effects of colour and valence on news evaluation.

    Science.gov (United States)

    Kaspar, Kai; Grümmer, Melanie; Kießler, Antje; Neuß, Celina; Schröter, Franziska

    2017-12-01

    Research across different fields of psychology has reported effects of colour cues on a variety of cognitive processes. Especially, the colour red has been shown to have striking influences. In the context of media reception, however, colour effects have been widely neglected so far. This study made a first step in this direction by investigating the effects of the colour red (compared with blue and grey) on the way news articles are evaluated. Two types of news were framed by a coloured border while the valence of the news content additionally varied. Based on 369 participants who read and evaluated the news articles online, we observed effects for colour cues and news valence in the absence of an interaction effect, indicating that the colour red induced approach motivation. However, only the contrast between red and grey reached statistical significance, indicating that chromatic and achromatic colours may differ in their perceived visual saliency. Overall, these results provide an important complement to previous studies and have practical implications for media researchers and producers. © 2015 International Union of Psychological Science.

  9. Neutron scattering studies of mixed-valence semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Mignot, J M [Laboratoire Leon Brillouin (LLB) - Centre d` Etudes de Saclay, 91 - Gif-sur-Yvette (France); Alekseev, P A [Kurchatov Institute, Moscow (Russian Federation)

    1994-12-31

    Neutron scattering experiments on the mixed-valence (MV) compounds SmB{sub 6} are reported. The inelastic magnetic response of SmB{sub 6} at T = 2 K, measured on a double-isotope single crystal,displays a strongly damped peak at 35 meV corresponding to the inter multiplet transition of Sm{sup 2+}. At lower energies ( h.{omega} {approx_equal} 14 meV), a narrow magnetic excitation is observed, with remarkable scattering-vector and temperature dependences of its intensity. This novel feature is discussed in terms of recent theoretical works describing the formation of an anisotropic local bound state in semiconducting MV materials. If the average samarium valence is decreased by substituting La for Sm, a peak is found to appear at high energies. The elastic magnetic form factor of SmB{sub 6} was determined using polarised neutrons and no significant difference is observed in its Q-dependence with respect to that of pure divalent samarium. This surprising behaviour is constant with previous measurements on the gold (high-pressure) phase of SmS. The above results are compared to those already reported for other MV materials. In particular existing information for TmSe is supplemented by recent inelastic scattering measurements carried out on a large stoichiometric single crystal. (author). 44 refs., 7 figs.

  10. Relative Contribution of Odour Intensity and Valence to Moral Decisions.

    Science.gov (United States)

    Cecchetto, Cinzia; Rumiati, Raffaella Ida; Parma, Valentina

    2017-01-01

    Meta-analytic evidence showed that the chemical senses affect moral decisions. However, how odours impact on morality is currently unclear. Through a set of three studies, we assess whether and how odour intensity biases moral choices (Study 1a), its psychophysiological responses (Study 1b), as well as the behavioural and psychophysiological effects of odour valence on moral choices (Study 2). Study 1a suggests that the presence of an odour plays a role in shaping moral choice. Study 1b reveals that of two iso-pleasant versions of the same neutral odour, only the one presented sub-threshold (vs. supra-threshold) favours deontological moral choices, those based on the principle of not harming others even when such harm provides benefits. As expected, this odour intensity effect is tracked by skin conductance responses, whereas no difference in cardiac activity - proxy for the valence dimension - is revealed. Study 2 suggests that the same neutral odour presented sub-threshold increases deontological choices even when compared to iso-intense ambiguous odour, perceived as pleasant or unpleasant by half of the participants, respectively. Skin conductance responses, as expected, track odour pleasantness, but cardiac activity fails to do so. Results are discussed in the context of mechanisms alternative to disgust induction underlying moral choices.

  11. Affective picture modulation: valence, arousal, attention allocation and motivational significance.

    Science.gov (United States)

    Leite, Jorge; Carvalho, Sandra; Galdo-Alvarez, Santiago; Alves, Jorge; Sampaio, Adriana; Gonçalves, Oscar F

    2012-03-01

    The present study analyses the modulatory effects of affective pictures in the early posterior negativity (EPN), the late positive potential (LPP) and the human startle response on both the peripheral (eye blink EMG) and central neurophysiological levels (Probe P3), during passive affective pictures viewing. The affective pictures categories were balanced in terms of valence (pleasant; unpleasant) and arousal (high; low). The data shows that EPN may be sensitive to specific stimulus characteristics (affective relevant pictures versus neutral pictures) associated with early stages of attentional processing. In later stages, the heightened attentional resource allocation as well as the motivated significance of the affective stimuli was found to elicit enhanced amplitudes of slow wave processes thought to be related to enhanced encoding, namely LPP,. Although pleasant low arousing pictures were effective in engaging the resources involved in the slow wave processes, the highly arousing affective stimuli (pleasant and unpleasant) were found to produce the largest enhancement of the LPP, suggesting that high arousing stimuli may are associated with increased motivational significance. Additionally the response to high arousing stimuli may be suggestive of increased motivational attention, given the heightened attentional allocation, as expressed in the P3 probe, especially for the pleasant pictures. The hedonic valence may then serve as a mediator of the attentional inhibition to the affective priming, potentiating or inhibiting a shift towards defensive activation, as measured by the startle reflex. Copyright © 2011 Elsevier B.V. All rights reserved.

  12. Valence force fields and the lattice dynamics of beryllium oxide

    International Nuclear Information System (INIS)

    Ramani, R.; Mani, K.K.; Singh, R.P.

    1976-01-01

    The lattice dynamics of beryllium oxide have been studied using a rigid-ion model, with short-range forces represented by a valence force field. Various existing calculations on group-IV elements using such a field have been examined as a prelude to transference of force constants from diamond to beryllium oxide. The effects of ionicity on the force constants have been included in the form of scale factors. It is shown that no satisfactory fit to the long-wavelength data on BeO can be found with transferred force constants. However, adequate least-squares fits can be found both with four- and six-parameter valence force fields, the discrepancy with experiment being large only for one optical mode at the Brillouin-zone center. Dispersion curves along Δ and Σ are presented and are in fair agreement with experiment, deviations arising essentially from the quality of the fit to the long-wavelength data. The bond-bending interactions are found to play a significant role and arguments have been presented to show that the inclusion of further angle-angle interactions would yield a very satisfactory picture of the dynamics

  13. Solvent extraction of irradiated neptunium targets. I. Valence stabilization

    International Nuclear Information System (INIS)

    Thompson, G.H.; Thompson, M.C.

    1977-01-01

    Solvent extraction of 237 Np and 238 Pu from irradiated neptunium is being investigated as a possible replacement for the currently used anion exchange process at the Savannah River Plant. Solvent extraction would reduce separations costs and waste volume and increase the production rate. The major difficulty in solvent extraction processing is maintaining neptunium and plutonium in the extractable IV or VI valence states during initial extraction. This study investigated the stability of these states. Results show that: The extractable M(IV) valence states of neptunium and plutonium are mutually unstable in plant dissolver solution (2 g/l 237 Np, 0.4 g/l 238 Pu, 1.2M Al 3+ , 4.6M NO 3 - , and 1M H + ). The reaction rates producing inextractable species from extractable M(IV) or M(VI) are fast enough that greater than or equal to 99.9 percent extractable species in 237 Np-- 238 Pu mixtures cannot be maintained for a practicable processing period

  14. Pion and kaon valence-quark parton quasidistributions

    Science.gov (United States)

    Xu, Shu-Sheng; Chang, Lei; Roberts, Craig D.; Zong, Hong-Shi

    2018-05-01

    Algebraic Ansätze for the Poincaré-covariant Bethe-Salpeter wave functions of the pion and kaon are used to calculate their light-front wave functions, parton distribution amplitudes, parton quasidistribution amplitudes, valence parton distribution functions, and parton quasidistribution functions (PqDFs). The light-front wave functions are broad, concave functions, and the scale of flavor-symmetry violation in the kaon is roughly 15%, being set by the ratio of emergent masses in the s - and u -quark sectors. Parton quasidistribution amplitudes computed with longitudinal momentum Pz=1.75 GeV provide a semiquantitatively accurate representation of the objective parton distribution amplitude, but even with Pz=3 GeV , they cannot provide information about this amplitude's end point behavior. On the valence-quark domain, similar outcomes characterize PqDFs. In this connection, however, the ratio of kaon-to-pion u -quark PqDFs is found to provide a good approximation to the true parton distribution function ratio on 0.4 ≲x ≲0.8 , suggesting that with existing resources computations of ratios of parton quasidistributions can yield results that support empirical comparison.

  15. Theoretical modeling of the uranium 4f XPS for U(VI) and U(IV) oxides

    Energy Technology Data Exchange (ETDEWEB)

    Bagus, Paul S. [Department of Chemistry, University of North Texas, Denton, Texas 76203-5017 (United States); Nelin, Connie J. [Consulting and Services, 6008 Maury' s Trail, Austin, Texas 78730 (United States); Ilton, Eugene S. [Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)

    2013-12-28

    A rigorous study is presented of the physical processes related to X-Ray photoelectron spectroscopy, XPS, in the 4f level of U oxides, which, as well as being of physical interest in themselves, are representative of XPS in heavy metal oxides. In particular, we present compelling evidence for a new view of the screening of core-holes that extends prior understandings. Our analysis of the screening focuses on the covalent mixing of high lying U and O orbitals as opposed to the, more common, use of orbitals that are nominally pure U or pure O. It is shown that this covalent mixing is quite different for the initial and final, core-hole, configurations and that this difference is directly related to the XPS satellite intensity. Furthermore, we show that the high-lying U d orbitals as well as the U(5f) orbital may both contribute to the core-hole screening, in contrast with previous work that has only considered screening through the U(5f) shell. The role of modifying the U-O interaction by changing the U-O distance has been investigated and an unexpected correlation between U-O distance and XPS satellite intensity has been discovered. The role of flourite and octahedral crystal structures for U(IV) oxides has been examined and relationships established between XPS features and the covalent interactions in the different structures. The physical views of XPS satellites as arising from shake processes or as arising from ligand to metal charge transfers are contrasted; our analysis provides strong support that shake processes give a more fundamental physical understanding than charge transfer. Our theoretical studies are based on rigorous, strictly ab initio determinations of the electronic structure of embedded cluster models of U oxides with formal U(VI) and U(IV) oxidation states. Our results provide a foundation that makes it possible to establish quantitative relationships between features of the XPS spectra and materials properties.

  16. Theoretical modeling of the uranium 4f XPS for U(VI) and U(IV) oxides

    Science.gov (United States)

    Bagus, Paul S.; Nelin, Connie J.; Ilton, Eugene S.

    2013-12-01

    A rigorous study is presented of the physical processes related to X-Ray photoelectron spectroscopy, XPS, in the 4f level of U oxides, which, as well as being of physical interest in themselves, are representative of XPS in heavy metal oxides. In particular, we present compelling evidence for a new view of the screening of core-holes that extends prior understandings. Our analysis of the screening focuses on the covalent mixing of high lying U and O orbitals as opposed to the, more common, use of orbitals that are nominally pure U or pure O. It is shown that this covalent mixing is quite different for the initial and final, core-hole, configurations and that this difference is directly related to the XPS satellite intensity. Furthermore, we show that the high-lying U d orbitals as well as the U(5f) orbital may both contribute to the core-hole screening, in contrast with previous work that has only considered screening through the U(5f) shell. The role of modifying the U-O interaction by changing the U-O distance has been investigated and an unexpected correlation between U-O distance and XPS satellite intensity has been discovered. The role of flourite and octahedral crystal structures for U(IV) oxides has been examined and relationships established between XPS features and the covalent interactions in the different structures. The physical views of XPS satellites as arising from shake processes or as arising from ligand to metal charge transfers are contrasted; our analysis provides strong support that shake processes give a more fundamental physical understanding than charge transfer. Our theoretical studies are based on rigorous, strictly ab initio determinations of the electronic structure of embedded cluster models of U oxides with formal U(VI) and U(IV) oxidation states. Our results provide a foundation that makes it possible to establish quantitative relationships between features of the XPS spectra and materials properties.

  17. Femtosecond dynamics of electron transfer in a neutral organic mixed-valence compound

    International Nuclear Information System (INIS)

    Maksimenka, Raman; Margraf, Markus; Koehler, Juliane; Heckmann, Alexander; Lambert, Christoph; Fischer, Ingo

    2008-01-01

    In this article we report a femtosecond time-resolved transient absorption study of a neutral organic mixed-valence (MV) compound with the aim to gain insight into its charge-transfer dynamics upon optical excitation. The back-electron transfer was investigated in five different solvents, toluene, dibutyl ether, methyl-tert-butyl ether (MTBE), benzonitrile and n-hexane. In the pump step, the molecule was excited at 760 nm and 850 nm into the intervalence charge-transfer band. The resulting transients can be described by two time constant. We assign one time constant to the rearrangement of solvent molecules in the charge-transfer state and the second time constant to back-electron transfer to the electronic ground state. Back-electron transfer rates range from 1.5 x 10 12 s -1 in benzonitrile through 8.3 x 10 11 s -1 in MTBE, around 1.6 x 10 11 s -1 in dibutylether and toluene and to 3.8 x 10 9 s -1 in n-hexane

  18. Thermal and electron transport studies on the valence fluctuating compound YbNiAl4

    Science.gov (United States)

    Falkowski, M.; Kowalczyk, A.

    2018-05-01

    We report the thermoelectric power S and thermal conductivity κ measurements on the valence fluctuating compound YbNiAl4, furthermore taking into account the impact of the applied magnetic field. We discuss our new results with revisiting the magnetic [χ(T)], transport [ρ(T)], and thermodynamic [Cp(T)] properties in order to better understand the phenomenon of thermal and electron transport in this compound. The field dependence of the magnetoresistivity data is also given. The temperature dependence of thermoelectric power S(T) was found to exhibit a similar behaviour as expected for Yb-based compounds with divalent or nearly divalent Yb ions. In addition, the values of total thermal conductivity as a function of temperature κ(T) of YbNiAl4 are fairly low compared to those of pure metals which may be linked to the fact that the conduction band is perturbed by strong hybridization. A deeper analysis of the specific heat revealed the low-T anomaly of the ratio Cp(T)/T3, most likely associated with the localized low-frequency oscillators in this alloy. In addition, the Kadowaki-Woods ratio and the Wilson ratio are discussed with respect to the electronic correlations in YbNiAl4.

  19. Investigations of the valence-shell excitations of molecular ethane by high-energy electron scattering

    Science.gov (United States)

    Xu, Wei-Qing; Xu, Long-Quan; Qi, De-Guang; Chen, Tao; Liu, Ya-Wei; Zhu, Lin-Fan

    2018-04-01

    The differential cross sections and generalized oscillator strengths for the low-lying excitations of the valence-shell 1eg orbital electron in ethane have been measured for the first time at a high incident electron energy of 1500 eV and a scattering angular range of 1.5°-10°. A weak feature, termed X here, with a band center of about 7.5 eV has been observed, which was also announced by the previous experimental and theoretical studies. The dynamic behaviors of the generalized oscillator strengths for the 3s (8.7 eV), 3s+3p (9.31 eV, 9.41 eV), and X (˜7.5 eV) transitions on the momentum transfer squared have been obtained. The integral cross sections of these transitions from their thresholds to 5000 eV have been obtained with the aid of the BE-scaling (B is the binding energy and E is the excitation energy) method. The optical oscillator strengths of the above transitions determined by extrapolating their generalized oscillator strengths to the limit of the squared momentum transfer K2 → 0 are in good agreement with the ones from the photoabsorption spectrum [J. W. Au et al., Chem. Phys. 173, 209 (1993)], which indicates that the present differential cross sections, generalized oscillator strengths, and integral cross sections can serve as benchmark data.

  20. Advantages of low beam energies in a TEM for valence EELS

    Science.gov (United States)

    Stöger-Pollach, M.; Pongratz, P.

    2010-02-01

    Since the availability of monochromators in transmission electron microscopes (TEMs), electron energy loss spectrometry (EELS) is widely used to determine band gaps and the dielectric properties of semiconductors on a nano-metre scale. Nevertheless, three physical effects hamper straightforward analysis: (a) relativistic energy losses, (b) the delocalization of the energy loss which is in the 10 nano-metreer range for valence losses, and (c) the presence of interface plasmons. When reducing the operation voltage of the TEM one can kill two birds with one stone: (a) the relativistic losses will disappear as soon as veinvestigated sample) and (b) the delocalization will decrease, because it also depends on the energy of the incident electron probe. The determination of the optical properties of quantum structures is discussed in the case of GaP/GaAs interface at 200 keV and 20 keV beam energy, respectively. Further, the influence of the delocalization of the energy loss signal is discussed theoretically and experimentally.