Valence Band Structure of InAs1−xBix and InSb1−xBix Alloy Semiconductors Calculated Using Valence Band Anticrossing Model

Science.gov (United States)

Samajdar, D. P.; Dhar, S.

2014-01-01

The valence band anticrossing model has been used to calculate the heavy/light hole and spin-orbit split-off energies in InAs1−xBix and InSb1−xBix alloy systems. It is found that both the heavy/light hole, and spin-orbit split E + levels move upwards in energy with an increase in Bi content in the alloy, whereas the split E − energy for the holes shows a reverse trend. The model is also used to calculate the reduction of band gap energy with an increase in Bi mole fraction. The calculated values of band gap variation agree well with the available experimental data. PMID:24592181

Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy

Directory of Open Access Journals (Sweden)

Mickael Lozac'h, Shigenori Ueda, Shitao Liu, Hideki Yoshikawa, Sang Liwen, Xinqiang Wang, Bo Shen, Kazuaki Sakoda, Keisuke Kobayashi and Masatomo Sumiya

2013-01-01

Full Text Available Core-level and valence band spectra of InxGa1−xN films were measured using hard x-ray photoemission spectroscopy (HX-PES. Fine structure, caused by the coupling of the localized Ga 3d and In 4d with N 2s states, was experimentally observed in the films. Because of the large detection depth of HX-PES (~20 nm, the spectra contain both surface and bulk information due to the surface band bending. The InxGa1−xN films (x = 0–0.21 exhibited upward surface band bending, and the valence band maximum was shifted to lower binding energy when the mole fraction of InN was increased. On the other hand, downward surface band bending was confirmed for an InN film with low carrier density despite its n-type conduction. Although the Fermi level (EF near the surface of the InN film was detected inside the conduction band as reported previously, it can be concluded that EF in the bulk of the film must be located in the band gap below the conduction band minimum.

Broad-band hard X-ray reflectors

DEFF Research Database (Denmark)

Joensen, K.D.; Gorenstein, P.; Hoghoj, P.

1997-01-01

Interest in optics for hard X-ray broad-band application is growing. In this paper, we compare the hard X-ray (20-100 keV) reflectivity obtained with an energy-dispersive reflectometer, of a standard commercial gold thin-film with that of a 600 bilayer W/Si X-ray supermirror. The reflectivity...... of the multilayer is found to agree extraordinarily well with theory (assuming an interface roughness of 4.5 Angstrom), while the agreement for the gold film is less, The overall performance of the supermirror is superior to that of gold, extending the band of reflection at least a factor of 2.8 beyond...... that of the gold, Various other design options are discussed, and we conclude that continued interest in the X-ray supermirror for broad-band hard X-ray applications is warranted....

Determination of a natural valence-band offset - The case of HgTe and CdTe

Science.gov (United States)

Shih, C. K.; Spicer, W. E.

1987-01-01

A method to determine a natural valence-band offset (NVBO), i.e., the change in the valence-band maximum energy which is intrinsic to the bulk band structures of semiconductors is proposed. The HgTe-CdTe system is used as an example in which it is found that the valence-band maximum of HgTe lies 0.35 + or - 0.06 eV above that of CdTe. The NVBO of 0.35 eV is in good agreement with the X-ray photoemission spectroscopy measurement of the heterojunction offset. The procedure to determine the NVBO between semiconductors, and its implication on the heterojunction band lineup and the electronic structures of semiconductor alloys, are discussed.

Hole energy and momentum distributions in valence bands

International Nuclear Information System (INIS)

Laan, G. van der.

1982-01-01

In order to understand the electrical and magnetic properties of solids, the knowledge of the density of states and the dispersion relation of the valence bands is indispensable. This thesis offers some alternative methods to obtain information about the nature of the valence band. Part A deals with the energy distribution of the photoelectrons. A simple model, which explains the core hole satellite structure in compounds with large correlation effects between the valence band holes and the created photo-hole, is outlined. CuCl, CuX 2 (X = F Cl and Br) are studied, by photoemission and Auger electron spectroscopies in determining the valence band properties. Part B deals with the simultaneous measurement of the energy and the wave vector of the emitted electrons. A practical example is given for the determination of the dispersion relation in copper. The measurements of a surface resonance band and the distribution of the secondary electrons are also reported. (Auth.)

The localized effect of the Bi level on the valence band in the dilute bismuth GaBixAs1-x alloy

Science.gov (United States)

Zhao, Chuan-Zhen; Zhu, Min-Min; Wang, Jun; Wang, Sha-Sha; Lu, Ke-Qing

2018-05-01

The research on the temperature dependence of the band gap energy of the dilute bismuth GaBixAs1-x alloy has been done. It is found that its temperature insensitiveness is due to the enhanced localized character of the valence band state and the small decrease of the temperature coefficient for the conduction band minimum (CBM). The enhanced localized character of the valence band state is the main factor. In order to describe the localized effect of the Bi levels on the valence band, the localized energy is introduced into the Varshni's equation. It is found that the effect of the localized Bi level on the valence band becomes strong with increasing Bi content. In addition, it is found that the pressure dependence of the band gap energy of GaBixAs1-x does not seem to be influenced by the localized Bi levels. It is due to two factors. One is that the pressure dependence of the band gap energy is mainly determined by the D CBM of GaBixAs1-x. The D CBM of GaBixAs1-x is not influenced by the localized Bi levels. The other is that the small variation of the pressure coefficient for the D valence band maximum (VBM) state of GaBixAs1-x can be cancelled by the variation of the pressure coefficient for the D CBM state of GaBixAs1-x.

Huge operation by energy gap of novel narrow band gap Tl1-x In1-x B x Se2 (B = Si, Ge): DFT, x-ray emission and photoconductivity studies

Science.gov (United States)

Piasecki, M.; Myronchuk, G. L.; Zamurueva, O. V.; Khyzhun, O. Y.; Parasyuk, O. V.; Fedorchuk, A. O.; Albassam, A.; El-Naggar, A. M.; Kityk, I. V.

2016-02-01

It is shown that narrow band gap semiconductors Tl1-x In1-x GexSe2 are able effectively to vary the values of the energy gap. DFT simulations of the principal bands during the cationic substitutions is done. Changes of carrier transport features is explored. Relation with the changes of the near the surface states is explored . Comparison on a common energy scale of the x-ray emission Se Kβ 2 bands, representing energy distribution of the Se 4p states, indicates that these states contribute preliminary to the top of the valence band. The temperature dependence of electrical conductivity and spectral dependence photoconductivity for the Tl1-x In1-x Ge x Se2 and Tl1-x In1-x Si x Se2 single crystals were explored and compared with previously reported Tl1-x In1-x Sn x Se2. Based on our investigations, a model of centre re-charging is proposed. Contrary to other investigated crystals in Tl1-x In1-x Ge x Se2 single crystals for x = 0.1 we observe extraordinarily enormous photoresponse, which exceed more than nine times the dark current. X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces of Tl1-x In1-x GexSe2 (x = 0.1 and 0.2) single crystals have been studied. These results indicate that the relatively low hygroscopicity of the studied single crystals is typical for the Tl1-x In1-x Ge x Se2 crystals, a property that is very important for handling these quaternary selenides as infrared materials operating at ambient conditions.

Probing Transient Valence Orbital Changes with Picosecond Valence-to-Core X-ray Emission Spectroscopy

DEFF Research Database (Denmark)

March, Anne Marie; Assefa, Tadesse A.; Boemer, Christina

2017-01-01

We probe the dynamics of valence electrons in photoexcited [Fe(terpy)2]2+ in solution to gain deeper insight into the Fe ligand bond changes. We use hard X-ray emission spectroscopy (XES), which combines element specificity and high penetration with sensitivity to orbital structure, making...... valence orbitals to the nascent core-hole. Vtc-XES offers particular insight into the molecular orbitals directly involved in the light-driven dynamics; a change in the metal ligand orbital overlap results in an intensity reduction and a blue energy shift in agreement with our theoretical calculations...... and more subtle features at the highest energies reflect changes in the frontier orbital populations....

Measurement of ZnO/Al2O3 Heterojunction Band Offsets by in situ X-Ray Photoelectron Spectroscopy

International Nuclear Information System (INIS)

Lei Hong-Wen; Zhang Hong; Wang Xue-Min; Zhao Yan; Yan Da-Wei; Jiang Zhong-Qian; Yao Gang; Zeng Ti-Xian; Wu Wei-Dong

2013-01-01

ZnO films are grown on c-sapphire substrates by laser molecular beam epitaxy. The band offsets of the ZnO/Al 2 O 3 heterojunction are studied by in situ x-ray photoelectron spectroscopy. The valence band of Al 2 O 3 is found to be 3.59±0.05eV below that of ZnO. Together with the resulting conduction band offset of 2.04±0.05eV, this indicates that a type-I staggered band line exists at the ZnO/Al 2 O 3 heterojunction

Quadrupole effects in core and valence photoelectron emission from crystalline germanium measured via a spatially modulated x-ray interference field

International Nuclear Information System (INIS)

Nelson, E.J.; Woicik, J.C.; Pianetta, P.; Vartanyants, I.A.; Cooper, J.W.

2002-01-01

Near a crystal x-ray Bragg reflection, the incident and reflected x-ray beams that travel with opposite wave vectors create an x-ray standing-wave (XSW) interference field. The quadrupole (and higher order nondipole) contributions to the photoelectron emission matrix element differ for these two beams due to their different wave vectors. By monitoring the angle-resolved photoelectron yield as a function of photon energy near the (11-1) Bragg back-reflection condition of crystalline Ge, we measure the contribution of nondipole effects to Ge 3p, Ge 3d, and Ge valence-band (4s and 4p) XSW photoelectron emission. Significant changes due to nondipole emission are measured in both the apparent amplitude and phase of the Ge structure factor relative to the true Ge atomic distribution, and compared to theory

X-ray photoelectron spectroscopy investigations of band offsets in Ga0.02Zn0.98O/ZnO heterojunction for UV photodetectors

Science.gov (United States)

Singh, Karmvir; Rawal, Ishpal; Punia, Rajesh; Dhar, Rakesh

2017-10-01

Here, we report the valence and conduction band offset measurements in pure ZnO and the Ga0.02Zn0.98O/ZnO heterojunction by X-Ray photoelectron spectroscopy studies for UV photodetector applications. For detailed investigations on the band offsets and UV photodetection behavior of Ga0.02Zn0.98O/ZnO heterostructures, thin films of pristine ZnO, Ga-doped ZnO (Ga0.02Zn0.98O), and heterostructures of Ga-doped ZnO with ZnO (Ga0.02Zn0.98O/ZnO) were deposited using a pulsed laser deposition technique. The deposited thin films were characterized by X-ray diffraction, atomic force microscopy, and UV-Vis spectroscopy. X-ray photoelectron spectroscopy studies were carried out on all the thin films for the investigation of valence and conduction band offsets. The valence band was found to be shifted by 0.28 eV, while the conduction band has a shifting of -0.272 eV in the Ga0.02Zn0.98O/ZnO heterojunction as compared to pristine ZnO thin films. All the three samples were analyzed for photoconduction behavior under UVA light of the intensity of 3.3 mW/cm2, and it was observed that the photoresponse of pristine ZnO (19.75%) was found to increase with 2 wt. % doping of Ga (22.62%) and heterostructured thin films (29.10%). The mechanism of UV photodetection in the deposited samples has been discussed in detail, and the interaction of chemisorbed oxygen on the ZnO surface with holes generated by UV light exposure has been the observed mechanism for the change in electrical conductivity responsible for UV photoresponse on the present deposited ZnO films.

Relaxation and cross section effects in valence band photoemission spectroscopy

International Nuclear Information System (INIS)

McFeely, F.R.

1976-09-01

Various problems relating to the interpretation of valence band x-ray photoemission (XPS) spectra of solids are discussed. The experiments and calculations reported herein deal with the following questions: (1) To what extent do many-body effects manifest themselves in an XPS valence band spectrum, and thus invalidate a direct comparison between the photoemission energy distribution, I(E), and the density of states, N(E), calculated on the basis of ground-state one-electron theory. (2) The effect of the binding-energy-dependent photoemission cross section on I(E) at XPS energies. (3) In favorable cases indicated by (1) and (2) we examine the effect of the interaction of the crystal field with the apparent spin-orbit splittings of core levels observed in XPS spectra. (4) The use of tight binding band structure calculations to parameterize the electronic band structure from XPS and other data is described. (5) The use of high energy angle-resolved photoemission on oriented single crystals to gain orbital symmetry information is discussed. (6) The evolution of the shape of the photoemission energy distribution (of polycrystalline Cu) as a function of photon energy from 50 less than or equal h ω less than or equal 175 is discussed

The Soft X-Ray Spectra of Sulfur Compounds.

Science.gov (United States)

Zhou, Ling

1995-01-01

The sulfur compounds including CdS, ZnS, rm MoS_2, WS_2, NiS, FeS, GaS, SnS, MgS and Alloy rm ZnS_{x }Se_{1-x} were investigated by using photon/e-beam excited soft x-ray spectroscopy through SXA, SXE, SXF and inelastic Resonant Raman scattering and resonant elastic scattering processes. For valence bands, the PDOS of S L_{2,3}, Zn M_{2,3}, Se M _{4,5}, bands locations, band gaps Eg, core level spin splitting, the lifetime broadening of valence band t_{1/2}, branching ratio of rm L_2/L_3 and shallow d level and exciton state were measured in some of these materials respectively. The excitation mechanism or threshold effects were studied for CdS, ZnS, MoS_2, WS_2, FeS, NiS, and alloy. In photon excited S L_ {2,3}^ectra, local core levels with spin splitting were found to charge threshold effects. The threshold effects are also found to be influenced by resonant elastic and inelastic scattering process. A simple model and the second order perturbation theory are used to explain the observed inelastic Raman scattering of Zn M _{2,3} spectra near d threshold. The d participation in the chemical bonding and interactions was studied. Atomiclike d bands were found in FeS and NiS from strong d-d and d-p couplings. Two groups of d bands were observed in Transitional Metal Sulfides (TMS) and the no-bonding group with a few d bands was found to across whole valence bands in TMS. The direct connection between valence bands and conduction bands is built and some conduction bands were studied. A study of alloy was included briefly. These experiments provide a rich information about TMS, and prove that Soft X-ray Spectroscopy is a powerful, precise and reliable tool in the study of fine electronic band structure in solids.

Electronic structure of multiferroic BiFeO3 by resonant soft-x-ray emission spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Higuchi, Tohru; Higuchi, T.; Liu, Y.-S.; Yao, P.; Glans, P.-A.; Guo, Jinghua; Chang, C.; Wu, Z.; Sakamoto, W.; Itoh, N.; Shimura, T.; Yogo, T.; Hattori, T.

2008-07-11

The electronic structure of multiferroic BiFeO{sub 3} has been studied using soft-X-ray emission spectroscopy. The fluorescence spectra exhibit that the valence band is mainly composed of O 2p state hybridized with Fe 3d state. The band gap corresponding to the energy separation between the top of the O 2p valence band and the bottom of the Fe 3d conduction band is 1.3 eV. The soft-X-ray Raman scattering reflects the features due to charge transfer transition from O 2p valence band to Fe 3d conduction band. These findings are similar to the result of electronic structure calculation by density functional theory within the local spin-density approximation that included the effect of Coulomb repulsion between localized d states.

Electronic structure simulation of chromium aluminum oxynitride by discrete variational-X{alpha} method and X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Choi, Youngmin; Chang, Hyunju; Lee, Jae Do [Korea Research Inst. of Chemical Technology, Taejon (Korea); Kim, Eunah; No, Kwangsoo [Korea Advanced Inst. of Science and Technology, Taejon (Korea)

2002-09-01

We use a first-principles discrete variational (DV)-X{alpha} method to investigate the electronic structure of chromium aluminum oxynitride. When nitrogen is substituted for oxygen in the Cr-Al-O system, the N2p level appears in the energy range between O2p and Cr3d levels. Consequently, the valence band of chromium aluminum oxynitride becomes broader and the band gap becomes smaller than that of chromium aluminum oxide, which is consistent with the photoelectron spectra for the valence band using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). We expect that this valence band structure of chromium aluminum oxynitride will modify the transmittance slope which is a requirement for photomask application. (author)

Band offsets in HfTiO/InGaZnO4 heterojunction determined by X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

He, G.; Chen, X.F.; Lv, J.G.; Fang, Z.B.; Liu, Y.M.; Zhu, K.R.; Sun, Z.Q.; Liu, M.

2015-01-01

Highlights: • Band offsets in HfTiO/InGaZnO 4 heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE v ) of sputter deposited HfTiO/InZnGaO 4 (IGZO) heterostructures. A ΔE v value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure

Influence of changes in the valence electronic configuration on the structure of L-X-ray spectra of molybdenum

International Nuclear Information System (INIS)

Polasik, M; Koziol, K; Slabkowska, K; Czarnota, M; Pajek, M

2009-01-01

Extensive multiconfiguration Dirac-Fock (MCDF) calculations with the inclusion of the transverse (Breit) interaction and QED corrections have been carried out on molybdenum to explain the dependence of the structure of Lα 1,2 and Lβ 1 lines on the changes in configurations of the valence electrons belonging to two different configuration types: three open-shell 4d 6-r 5s r (r = 2,1,0) configurations and one closed-shell 4d 4 3/2 5s 2 configuration. It has been found that the MCDF predictions for open-shell valence configurations (4d 4 5s 2 , 4d 5 5s 1 , 4d 6 5s 0 ) much better reproduce observed structure of Lα 1,2 lines in X-ray spectra of molybdenum than closed-shell 4d 4 3/2 5s 2 valence configuration. The influence of changes in the valence electronic configuration on the structure of L-X-ray spectra of molybdenum is noticeable. Moreover, the observation of the shapes of L-X-ray spectra seems to be very good method to investigate the changes of the valence electronic configuration caused by the chemical environment.

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

Energy Technology Data Exchange (ETDEWEB)

Jiao, Wenyuan, E-mail: wyjiaonju@gmail.com; Kong, Wei; Li, Jincheng; Kim, Tong-Ho; Brown, April S. [Department of Electrical and Computer Engineering, Duke University, Durham, NC, 27708 (United States); Collar, Kristen [Department of Physics, Duke University, Durham, NC, 27708 (United States); Losurdo, Maria [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy)

2016-03-15

Angle-resolved X-ray photoelectron spectroscopy (XPS) is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE)-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In{sub 0.18}Al{sub 0.82}N, 0.15 eV for In{sub 0.17}Al{sub 0.83}N, and 0.23 eV for In{sub 0.098}Al{sub 0.902}N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

Directory of Open Access Journals (Sweden)

Wenyuan Jiao

2016-03-01

Full Text Available Angle-resolved X-ray photoelectron spectroscopy (XPS is used in this work to experimentally determine the valence band offsets of molecular beam epitaxy (MBE-grown InAlN/GaN heterostructures with varying indium composition. We find that the internal electric field resulting from polarization must be taken into account when analyzing the XPS data. Valence band offsets of 0.12 eV for In0.18Al0.82N, 0.15 eV for In0.17Al0.83N, and 0.23 eV for In0.098Al0.902N with GaN are obtained. The results show that a compositional-depended bowing parameter is needed in order to estimate the valence band energies of InAlN as a function of composition in relation to those of the binary endpoints, AlN and InN.

Hard x-ray photoemission study of the temperature-induced valence transition system EuNi2(Si1-xGex) 2

Science.gov (United States)

Ichiki, Katsuya; Mimura, Kojiro; Anzai, Hiroaki; Uozumi, Takayuki; Sato, Hitoshi; Utsumi, Yuki; Ueda, Shigenori; Mitsuda, Akihiro; Wada, Hirofumi; Taguchi, Yukihiro; Shimada, Kenya; Namatame, Hirofumi; Taniguchi, Masaki

2017-07-01

We investigated the bulk-derived electronic structure of the temperature-induced valence transition system EuNi2(Si1 -xGex )2 (x =0.70 , 0.79, and 0.82) by means of hard x-ray photoemission spectroscopy (HAXPES). The HAXPES spectra clearly show distinct temperature dependencies in the spectral intensities of the Eu2 + and Eu3 +3 d components. For x =0.70 , the changes in the Eu2 + and Eu3 +3 d spectral components with temperature reflect a continuous valence transition, whereas the sudden changes for x =0.79 and 0.82 reflect first-order valence transitions. The Eu 3 d spectral shapes for all x and particularly the drastic changes in the Eu3 +3 d feature with temperature are validated by a theoretical calculation based on the single-impurity Anderson model (SIAM). SIAM analysis reveals that the valence transition for each x is controlled by the c -f hybridization strength and the charge-transfer energy. Furthermore, the c -f hybridization strength governs the valence transition of this system, which is either first order or continuous, consistent with Kondo volume collapse.

Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ye, Gang [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CNRS-International-NTU-THALES Research Alliances/UMI 3288, 50 Nanyang Drive, Singapore 637553 (Singapore); Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), Singapore 117608 (Singapore)

2016-04-18

The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

X-ray photoemission study of plutonium metal

International Nuclear Information System (INIS)

Baptist, R.

1982-01-01

The x-ray induced photoemission from clean pure plutonium metal is described and the results for both core and valence levels are compared with previous measurements on light actinides. It is found that, as in thorium and urnaium, the configuration interaction plays an important role for core levels, in particular for those of the n=5 shell. The experimental valence-band spectrum confirms the existence of 5f states at the Fermi level and is compared with a density of states of FCC Pu derived from a recent relativistic band structure calculation. (author)

Band offsets in HfTiO/InGaZnO{sub 4} heterojunction determined by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

He, G., E-mail: ganghe01@issp.ac.cn [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Chen, X.F. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Lv, J.G., E-mail: jglv@hftc.edu.cn [School of Electronic and Information Engineering, Hefei Normal University, Hefei 230601 (China); Fang, Z.B., E-mail: csfzb@usx.edu.cn [Department of Physics, Shaoxing University, Shaoxing 312000 (China); Liu, Y.M.; Zhu, K.R.; Sun, Z.Q. [School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601 (China); Liu, M., E-mail: mliu@issp.ac.cn [Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2015-09-05

Highlights: • Band offsets in HfTiO/InGaZnO{sub 4} heterojunction were determined by XPS. • Valence band offset of HfTiO/IGZO heterojunction is determined to be 0.35 eV. • Conduction band offset of 1.61 eV is deduced for HfTiO/IGZO heterojunction. - Abstract: In current report, X-ray photoelectron spectroscopy has been pursued to obtain the valence band discontinuity (ΔE{sub v}) of sputter deposited HfTiO/InZnGaO{sub 4} (IGZO) heterostructures. A ΔE{sub v} value of 0.32 ± 0.1 eV was obtained by using the Ga 2p3/2, Zn 2p3/2, and In 3d5/2 energy levels as references. Taking into consideration the experimental band gaps of 5.35 eV and 3.39 eV for HfTiO and IGZO thin films measured by absorption method, respectively, this would result in a conduction band offset of 1.64 eV in this heterostructure.

X-band RF gun and linac for medical Compton scattering X-ray source

International Nuclear Information System (INIS)

Dobashi, Katsuhito; Uesaka, Mitsuru; Fukasawa, Atsushi; Sakamoto, Fumito; Ebina, Futaro; Ogino, Haruyuki; Urakawa, Junji; Higo, Toshiyasu; Akemoto, Mitsuo; Hayano, Hitoshi; Nakagawa, Keiichi

2004-01-01

Compton scattering hard X-ray source for 10-80 keV are under construction using the X-band (11.424 GHz) electron linear accelerator and YAG laser at Nuclear Engineering Research laboratory, University of Tokyo. This work is a part of the national project on the development of advanced compact medical accelerators in Japan. National Institute for Radiological Science is the host institute and U.Tokyo and KEK are working for the X-ray source. Main advantage is to produce tunable monochromatic hard (10-80 keV) X-rays with the intensities of 108-1010 photons/s (at several stages) and the table-top size. Second important aspect is to reduce noise radiation at a beam dump by adopting the deceleration of electrons after the Compton scattering. This realizes one beamline of a 3rd generation SR source at small facilities without heavy shielding. The final goal is that the linac and laser are installed on the moving gantry. We have designed the X-band (11.424 GHz) traveling-wave-type linac for the purpose. Numerical consideration by CAIN code and luminosity calculation are performed to estimate the X-ray yield. X-band thermionic-cathode RF-gun and RDS(Round Detuned Structure)-type X-band accelerating structure are applied to generate 50 MeV electron beam with 20 pC microbunches (104) for 1 microsecond RF macro-pulse. The X-ray yield by the electron beam and Q-switch Nd:YAG laser of 2 J/10 ns is 107 photons/RF-pulse (108 photons/sec at 10 pps). We design to adopt a technique of laser circulation to increase the X-ray yield up to 109 photons/pulse (1010 photons/s). 50 MW X-band klystron and compact modulator have been constructed and now under tuning. The construction of the whole system has started. X-ray generation and medical application will be performed in the early next year

X-band RF gun and linac for medical Compton scattering X-ray source

Science.gov (United States)

Dobashi, Katsuhito; Uesaka, Mitsuru; Fukasawa, Atsushi; Sakamoto, Fumito; Ebina, Futaro; Ogino, Haruyuki; Urakawa, Junji; Higo, Toshiyasu; Akemoto, Mitsuo; Hayano, Hitoshi; Nakagawa, Keiichi

2004-12-01

Compton scattering hard X-ray source for 10-80 keV are under construction using the X-band (11.424 GHz) electron linear accelerator and YAG laser at Nuclear Engineering Research laboratory, University of Tokyo. This work is a part of the national project on the development of advanced compact medical accelerators in Japan. National Institute for Radiological Science is the host institute and U.Tokyo and KEK are working for the X-ray source. Main advantage is to produce tunable monochromatic hard (10-80 keV) X-rays with the intensities of 108-1010 photons/s (at several stages) and the table-top size. Second important aspect is to reduce noise radiation at a beam dump by adopting the deceleration of electrons after the Compton scattering. This realizes one beamline of a 3rd generation SR source at small facilities without heavy shielding. The final goal is that the linac and laser are installed on the moving gantry. We have designed the X-band (11.424 GHz) traveling-wave-type linac for the purpose. Numerical consideration by CAIN code and luminosity calculation are performed to estimate the X-ray yield. X-band thermionic-cathode RF-gun and RDS(Round Detuned Structure)-type X-band accelerating structure are applied to generate 50 MeV electron beam with 20 pC microbunches (104) for 1 microsecond RF macro-pulse. The X-ray yield by the electron beam and Q-switch Nd:YAG laser of 2 J/10 ns is 107 photons/RF-pulse (108 photons/sec at 10 pps). We design to adopt a technique of laser circulation to increase the X-ray yield up to 109 photons/pulse (1010 photons/s). 50 MW X-band klystron and compact modulator have been constructed and now under tuning. The construction of the whole system has started. X-ray generation and medical application will be performed in the early next year.

High-resolution x-ray photoemission spectra of silver

DEFF Research Database (Denmark)

Barrie, A.; Christensen, N. E.

1976-01-01

An electron spectrometer fitted with an x-ray monochromator for Al Kα1,2 radiation (1486.6 eV) has been used to record high-resolution x-ray photoelectron spectra for the 4d valence band as well as the 3d spin doublet in silver. The core-level spectrum has a line shape that can be described...... successfully in terms of the many-body theory of Mahan, Nozières, and De Dominicis. The 4d spectrum agrees well with predictions based on a relativistic-augmented-plane-wave band-structure calculation....

X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound

Science.gov (United States)

Shcherba, I. D.; Kostyk, L. V.; Noga, H.; Bekenov, L. V.; Uskokovich, D.; Jatsyk, B. M.

2017-09-01

The band structure of Ca3Ga2Ge3О12 with the garnet structure has been determined for the first time by X-ray emission and photoelectron spectroscopy. It has been established that the bottom of the valence band is formed by Ge d states, which are not dominant in the chemical bonding. Strong hybridization of oxygen 2s states with 4p states of Ga and Ge revealed by the presence of an extra structure in the X-ray emission spectra has been found. The middle of the valence band has been demonstrated to be occupied by d states of Ga, while Ga and Ge 4рstates with a considerable admixture of oxygen 2p states form the top of the valence band.

X-ray photoelectron and x-ray-induced Auger electron spectroscopic data, 1

International Nuclear Information System (INIS)

Baba, Yuji; Sasaki, T.A.

1984-02-01

The intrinsic data of the X-ray photoelectron spectra (XPS) and X-ray-induced Auger electron spectra (XAES) for 3d transition-metals and related oxides were presented. The clean surfaces of the metals were obtained by two different methods ; mechanical filings and Ar + ion etchings. The oxides examined are typical compounds such as Sc 2 O 3 , TiO 2 , V 2 O 5 and NiO. The report consists of 4 wide scans, 26 core-line spectra, 10 valence-band spectra and 20 XAES spectra. The peak positions of the core-lines and the Auger lines were summarized in 8 tables together with their chemical shifts. (author)

Effect of Pressure on Valence and Structural Properties of YbFe₂Ge₂ Heavy Fermion Compound A Combined Inelastic X-ray Spectroscopy, X-ray Diffraction, and Theoretical Investigation

Energy Technology Data Exchange (ETDEWEB)

Kumar, Ravhi S.; Svane, Axel; Vaitheeswaran; #8741; , Ganapathy; Kanchana, Venkatakrishnan; Antonio, Daniel; Cornelius, Andrew L.; Bauer, Eric D.; Xiao, Yuming; Chow, Paul (Aarhus); (CIW); (Hyderabad - India); (IIT-India); (LANL); (UNLV)

2016-06-03

The crystal structure and the Yb valence of the YbFe₂Ge₂ heavy fermion compound was measured at room temperature and under high pressures using high-pressure powder X-ray diffraction and X-ray absorption spectroscopy via both partial fluorescence yield and resonant inelastic X-ray emission techniques. Furthermore, the measurements are complemented by first-principles density functional theoretical calculations using the self-interaction corrected local spin density approximation investigating in particular the magnetic structure and the Yb valence. While the ThCr₂Si₂-type tetragonal (I4/mmm) structure is stable up to 53 GPa, the X-ray emission results show an increase of the Yb valence from v = 2.72(2) at ambient pressure to v = 2.93(3) at ~9 GPa, where at low temperature a pressure-induced quantum critical state was reported.

Deduction of the chemical state and the electronic structure of Nd{sub 2}Fe{sub 14}B compound from X-ray photoelectron spectroscopy core-level and valence-band spectra

Energy Technology Data Exchange (ETDEWEB)

Wang, Jing; Liang, Le [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Zhang, Lanting, E-mail: lantingzh@sjtu.edu.cn, E-mail: lmsun@sjtu.edu.cn [School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Hirano Institute for Materials Innovation, Shanghai Jiao Tong University, Shanghai 200240 (China); Sun, Limin, E-mail: lantingzh@sjtu.edu.cn, E-mail: lmsun@sjtu.edu.cn [Instrumental Analysis Center, Shanghai Jiao Tong University, Shanghai 200240 (China); Hirano, Shinichi [Hirano Institute for Materials Innovation, Shanghai Jiao Tong University, Shanghai 200240 (China)

2014-10-28

Characterization of chemical state and electronic structure of the technologically important Nd{sub 2}Fe{sub 14}B compound is attractive for understanding the physical nature of its excellent magnetic properties. X-ray photoelectron spectroscopy (XPS) study of such rare-earth compound is important and also challenging due to the easy oxidation of surface and small photoelectron cross-sections of rare-earth 4f electrons and B 2p electrons, etc. Here, we reported an investigation based on XPS spectra of Nd{sub 2}Fe{sub 14}B compound as a function of Ar ion sputtering time. The chemical state of Fe and that of B in Nd{sub 2}Fe{sub 14}B compound can be clearly determined to be 0 and −3, respectively. The Nd in Nd{sub 2}Fe{sub 14}B compound is found to have the chemical state of close to +3 instead of +3 as compared with the Nd in Nd{sub 2}O{sub 3}. In addition, by comparing the valence-band spectrum of Nd{sub 2}Fe{sub 14}B compound to that of the pure Fe, the contributions from Nd, Fe, and B to the valence-band structure of Nd{sub 2}Fe{sub 14}B compound is made more clear. The B 2p states and B 2s states are identified to be at ∼11.2 eV and ∼24.6 eV, respectively, which is reported for the first time. The contribution from Nd 4f states can be identified both in XPS core-level spectrum and XPS valence-band spectrum. Although Nd 4f states partially hybridize with Fe 3d states, Nd 4f states are mainly localized in Nd{sub 2}Fe{sub 14}B compound.

Band alignment of TiO2/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Directory of Open Access Journals (Sweden)

Haibo Fan

2016-01-01

Full Text Available The energy band alignment between pulsed-laser-deposited TiO2 and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO of 0.61 eV and a conduction band offset (CBO of 0.29 eV were obtained across the TiO2/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction.

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.

Science.gov (United States)

Sang, Ling; Zhu, Qin Sheng; Yang, Shao Yan; Liu, Gui Peng; Li, Hui Jie; Wei, Hong Yuan; Jiao, Chun Mei; Liu, Shu Man; Wang, Zhan Guo; Zhou, Xiao Wei; Mao, Wei; Hao, Yue; Shen, Bo

2014-01-01

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.

Valence change detection in memristive oxide based heterostructure cells by hard X-ray photoelectron emission spectroscopy

Science.gov (United States)

Kindsmüller, A.; Schmitz, C.; Wiemann, C.; Skaja, K.; Wouters, D. J.; Waser, R.; Schneider, C. M.; Dittmann, R.

2018-04-01

The switching mechanism of valence change resistive memory devices is widely accepted to be an ionic movement of oxygen vacancies resulting in a valence change of the metal cations. However, direct experimental proofs of valence changes in memristive devices are scarce. In this work, we have employed hard X-ray photoelectron emission microscopy (PEEM) to probe local valence changes in Pt/ZrOx/Ta memristive devices. The use of hard X-ray radiation increases the information depth, thus providing chemical information from buried layers. By extracting X-ray photoelectron spectra from different locations in the PEEM images, we show that zirconia in the active device area is reduced compared to a neighbouring region, confirming the valence change in the ZrOx film during electroforming. Furthermore, we succeeded in measuring the Ta 4f spectrum for two different resistance states on the same device. In both states, as well as outside the device region, the Ta electrode is composed of different suboxides without any metallic contribution, hinting to the formation of TaOx during the deposition of the Ta thin film. We observed a reduction of the Ta oxidation state in the low resistance state with respect to the high resistive state. This observation is contradictory to the established model, as the internal redistribution of oxygen between ZrOx and the Ta electrode during switching would lead to an oxidation of the Ta layer in the low resistance state. Instead, we have to conclude that the Ta electrode takes an active part in the switching process in our devices and that oxygen is released and reincorporated in the ZrOx/TaOx bilayer during switching. This is confirmed by the degradation of the high resistance state during endurance measurements under vacuum.

Time-resolved x-ray laser induced photoelectron spectroscopy of isochoric heated copper

International Nuclear Information System (INIS)

Nelson, A.J.; Dunn, J.; Hunter, J.; Widmann, K.

2005-01-01

Time-resolved x-ray photoelectron spectroscopy is used to probe the nonsteady-state evolution of the valence band electronic structure of laser heated ultrathin (50 nm) copper. A metastable phase is studied using a 527 nm wavelength 400 fs laser pulse containing 0.1-2.5 mJ laser energy focused in a large 500x700 μm 2 spot to create heated conditions of 0.07-1.8x10 12 W cm -2 intensity. Valence band photoemission spectra are presented showing the changing occupancy of the Cu 3d level with heating are presented. These picosecond x-ray laser induced time-resolved photoemission spectra of laser-heated ultrathin Cu foil show dynamic changes in the electronic structure. The ultrafast nature of this technique lends itself to true single-state measurements of shocked and heated materials

Resonant Inelastic X-ray Scattering: From band mapping to inter-orbital excitations

International Nuclear Information System (INIS)

Luning, J.; Hague, C.F.

2008-01-01

Resonant inelastic X-ray scattering (also known as resonant X-ray Raman spectroscopy when only valence and conduction states are involved in the final state excitation) has developed into a major tool for understanding the electronic properties of complex materials. Presently it provides access to electron excitations in the few hundred meV range with element and bulk selectivity. Recent progress in X-ray optics and synchrotron radiation engineering have opened up new perspectives for this powerful technique to improve resolving power and efficiency. We briefly present the basics of the method and illustrate its potential with examples chosen from the literature. (authors)

Band alignment of TiO{sub 2}/FTO interface determined by X-ray photoelectron spectroscopy: Effect of annealing

Energy Technology Data Exchange (ETDEWEB)

Fan, Haibo, E-mail: hbfan@nwu.edu.cn, E-mail: liusz@snnu.edu.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); School of Physics, Northwest University, Xi’an 710069 (China); Yang, Zhou; Ren, Xianpei; Gao, Fei [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Yin, Mingli [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); School of Science, Xi’an Technological University, Xi’an, Shaanxi 710062 (China); Liu, Shengzhong, E-mail: hbfan@nwu.edu.cn, E-mail: liusz@snnu.edu.cn [Key Laboratory of Applied Surface and Colloid Chemistry, National Ministry of Education, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119 (China); Dalian Institute of Chemical Physics, Dalian National Laboratory for Clean Energy, Chinese Academy of Sciences, Dalian, 116023 (China)

2016-01-15

The energy band alignment between pulsed-laser-deposited TiO{sub 2} and FTO was firstly characterized using high-resolution X-ray photoelectron spectroscopy. A valence band offset (VBO) of 0.61 eV and a conduction band offset (CBO) of 0.29 eV were obtained across the TiO{sub 2}/FTO heterointerface. With annealing process, the VBO and CBO across the heterointerface were found to be -0.16 eV and 1.06 eV, respectively, with the alignment transforming from type-I to type-II. The difference in the band alignment is believed to be dominated by the core level down-shift of the FTO substrate, which is a result of the oxidation of Sn. Current-voltage test has verified that the band alignment has a significant effect on the current transport of the heterojunction.

Band offset in zinc oxy-sulfide/cubic-tin sulfide interface from X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Sanal, K.C.; Nair, P.K.; Nair, M.T.S., E-mail: mtsn@ier.unam.mx

2017-02-28

Highlights: • Zinc oxy-sulfide thin films, 175–240 nm, deposited by rf-sputtering from targets of ZnO + ZnS. • Oxygen content in thin films is enhanced 3–4 times compared with that in ZnO:ZnS targets. • Thin film ZnO{sub x}S{sub 1−x} with x = 0.88–0.27 and optical band gap 2.8–3.2 eV is suitable for solar cells. • The conduction band offset with SnS of cubic structure studied by XPS are +0.41 to −0.28 eV. - Abstract: Zinc oxy-sulfide, ZnO{sub x}S{sub 1−x}, has been found to provide better band alignment in thin film solar cells of tin sulfide of orthorhombic crystalline structure. Here we examine ZnO{sub x}S{sub 1−x}/SnS-CUB interface, in which the ZnO{sub x}S{sub 1−x} thin film was deposited by radio frequency (rf) magnetron sputtering on SnS thin film of cubic (CUB) crystalline structure with a band gap (E{sub g}) of 1.72 eV, obtained via chemical deposition. X-ray photoelectron spectroscopy provides the valence band maxima of the materials and hence places the conduction band offset of 0.41 eV for SnS-CUB/ZnO{sub 0.27}S{sub 0.73} and −0.28 eV for SnS-CUB/ZnO{sub 0.88}S{sub 0.12} interfaces. Thin films of ZnO{sub x}S{sub 1−x} with 175–240 nm in thickness were deposited from targets prepared with different ZnO to ZnS molar ratios. With the target of molar ratio of 1:13.4, the thin films are of composition ZnO{sub 0.27}S{sub 0.73} with hexagonal crystalline structure and with that of 1:1.7 ratio, it is ZnO{sub 0.88}S{sub 0.12}. The optical band gap of the ZnO{sub x}S{sub 1−x} thin films varies from 2.90 eV to 3.21 eV as the sulfur to zinc ratio in the film increases from 0.12:1 to 0.73:1 as determined from X-ray diffraction patterns. Thus, band offsets sought for absorber materials and zinc oxy-sulfide in solar cells may be achieved through a choice of ZnO:ZnS ratio in the sputtering target.

The X-ray electronic spectra of TiC-NbC solid solution

International Nuclear Information System (INIS)

Cherkashenko, V.M.; Ezhov, A.V.; Nazarova, S.Z.; Kurmaev, Eh.Z.; Nojmann, M.

2001-01-01

X-ray photoelectronic spectra of inner levels and valency lands in TiC-NbC solid solutions were studied. Results of combining TiL α -, NbL β2.15 -, CK α - X-ray emission spectra and photoelectronic spectra of valency bands in one energy scale in reference to the Fermi level were analyzed. It is shown that a change in crystal lattice parameters, as well as charge redistribution between titanium and niobium atoms, produce a strong effect on electronic structure formation in the mixed carbides mentioned [ru

X-ray and photoelectron spectroscopy of light rare earths

International Nuclear Information System (INIS)

Fuggle, J.C.

1983-01-01

Core level photoelectron spectroscopy, X-ray absorption spectroscopy, bremsstrahlung isochromat spectroscopy and valence band studies are discussed. Particular emphasis is placed on cerium. Correlation effects, multiplet structure, screening effects and the dynamics of the processes involved are illustrated with selected examples. (Auth.)

Effect of Mn Substitution for Multiferroic BiFeO3 Probed by High-Resolution Soft-X-Ray Spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Higuchi, Tohru; Higuchi, T.; Hattori, T.; Sakamoto, W.; Itoh, N.; Shimura, T.; Yogo, T.; Yao, P.; Liu, Y.; Glans, P.; Chang, C.; Wu, Z.; Guo, Jinghua

2008-07-11

The electronic structures of BiFeO{sub 3} (BF) and Mn-doped BiFeO{sub 3} (BF(Mn)) have been studied by X-ray absorption spectroscopy (XAS) and soft-X-ray emission spectroscopy (SXES). The BF and BF(Mn) have the mixed valence state of Fe{sup 2+} and Fe{sup 3+}. The valence band is mainly composed of O 2p state hybridized with the majority-spin t{sub 2g} and e{sub g} orbitals of Fe 3d state. The conduction band is composed of the minority-spin t{sub 2g} and e{sub g} orbitals of Fe 3d. The band gaps of BF and BF(Mn) are estimated to be 1.3 eV and 2.7 eV, respectively. The increase of band gap with Mn substitution contributes to the change of bandwidth of valence band.

Valence-electron configuration of Fe, Cr, and Ni in binary and ternary alloys from Kβ -to- Kα x-ray intensity ratios

Science.gov (United States)

Han, I.; Demir, L.

2009-11-01

Kβ -to- Kα x-ray intensity ratios of Fe, Cr, and Ni have been measured in pure metals and in alloys of FexNi1-x ( x=0.8 , 0.7, 0.6, 0.5, 0.4, 0.3, and 0.2), NixCr1-x ( x=0.8 , 0.6, 0.5, 0.4, and 0.2), FexCr1-x ( x=0.9 , 0.7, and 0.5), and FexCryNi1-(x+y) ( x=0.7-y=0.1 , x=0.5-y=0.2 , x=0.4-y=0.3 , x=0.3-y=0.3 , x=0.2-y=0.2 , and x=0.1-y=0.2 ) following excitation by 22.69 keV x rays from a 10 mCi C109d radioactive point source. The valence-electron configurations of these metals were determined by corporation of measured Kβ -to- Kα x-ray intensity ratios with the results of multiconfiguration Dirac-Fock calculation for various valence-electron configurations. Valence-electron configurations of 3d transition metals in alloys indicate significant differences with respect to the pure metals. Our analysis indicates that these differences arise from delocalization and/or charge transfer phenomena in alloys. Namely, the observed change of the valence-electron configurations of metals in alloys can be explained with the transfer of 3d electrons from one element to the other element and/or the rearrangement of electrons between 3d and 4s,4p states of individual metal atoms.

Preliminary soft x-ray studies of beta-SiC

Energy Technology Data Exchange (ETDEWEB)

Shek, M.L. [Brookhaven National Lab., Upton, NY (United States); Miyano, K.E.; Ederer, D.L. [Tulane Univ., New Orleans, LA (United States). Dept. of Physics; Dong, Q.Y.; Callcott, T.A. [Tennessee Univ., Knoxville, TN (United States). Dept. of Physics

1994-06-01

We have looked at beta-SiC with soft x-ray emission and photoemission spectroscopy. From the Si L{sub 23} and C K emissions, the Si s+d-like and C p partial density of states in the bulk valence band are identified, and compared with valence band photoemission. In addition to bulk electronic structural features, photoemission from a (3 {times} 2) Si-rich surface shows two surface-derived valence features at {approximately}{minus}2.6 and {approximately}{minus}1.6 eV relative to the Fermi level. The intensities of these valence features vary as those of surface Si 2p core level components shifted by {minus}0.5 eV and {minus}1.4 eV from the bulk-like SiC Si 2p core level. We have also used the Si L{sub 23} absorption edge as a probe of the unfilled states near the conduction, band minimum.

Soft x-ray spectroscopy optimisation for the direct determination of valence

International Nuclear Information System (INIS)

Wison, N.C.; MacRae, C.M.; Nelson, S.

2002-01-01

Full text: Measuring the valence of elements and mapping their occurrence throughout a sample can give important insights into the chemistry of complex systems. The toxic nature of Cr 6+ gives great concern over its disposal in the environment. Being able to resolve Cr 6+ from Cr 3+ allows us to tackle these important problems. The electron probe micro-analyser (EPMA) is routinely used to provide micron resolution chemical analysis. However it is often possible to resolve changes in soft X-ray peak shape and position that reflect changes in the chemical state and crystal structure. A soft x-rays is usually considered to be one of less than 1.5 keV in energy In this study we have compared a range of Cr containing compounds, and measured the differences in the Cr Lα line. In some samples, the Cr L line can be 'relatively weak, so to maximise its excitation probability, a set of Monte Carlo simulations were performed using the CASINO V2.0 package and the most efficient excitation voltage was determined. We also investigate the soft x-ray spectroscopy using electronic structure calculations to produce theoretical Density of States (DOS) for comparison with the measured spectra. The theoretical calculations can aid in understanding spectrum shape and polarisation of the soft x-ray signal in unknown samples, when a full range of standards is not available. Copyright (2002) Australian Society for Electron Microscopy Inc

Probing the graphite band structure with resonant soft-x-ray fluorescence

Energy Technology Data Exchange (ETDEWEB)

Carlisle, J.A.; Shirley, E.L.; Hudson, E.A. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Soft x-ray fluorescence (SXF) spectroscopy using synchrotron radiation offers several advantages over surface sensitive spectroscopies for probing the electronic structure of complex multi-elemental materials. Due to the long mean free path of photons in solids ({approximately}1000 {angstrom}), SXF is a bulk-sensitive probe. Also, since core levels are involved in absorption and emission, SXF is both element- and angular-momentum-selective. SXF measures the local partial density of states (DOS) projected onto each constituent element of the material. The chief limitation of SXF has been the low fluorescence yield for photon emission, particularly for light elements. However, third generation light sources, such as the Advanced Light Source (ALS), offer the high brightness that makes high-resolution SXF experiments practical. In the following the authors utilize this high brightness to demonstrate the capability of SXF to probe the band structure of a polycrystalline sample. In SXF, a valence emission spectrum results from transitions from valence band states to the core hole produced by the incident photons. In the non-resonant energy regime, the excitation energy is far above the core binding energy, and the absorption and emission events are uncoupled. The fluorescence spectrum resembles emission spectra acquired using energetic electrons, and is insensitive to the incident photon`s energy. In the resonant excitation energy regime, core electrons are excited by photons to unoccupied states just above the Fermi level (EF). The absorption and emission events are coupled, and this coupling manifests itself in several ways, depending in part on the localization of the empty electronic states in the material. Here the authors report spectral measurements from highly oriented pyrolytic graphite.

Band offsets of novel CoTiO{sub 3}/Ag{sub 3}VO{sub 4} heterojunction measured by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Wangkawong, Kanlayawat [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Tantraviwat, Doldet [Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center (NECTEC), Chachoengsao 24000 (Thailand); Phanichphant, Sukon [Materials Science Research Centre, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Inceesungvorn, Burapat, E-mail: binceesungvorn@gmail.com [Department of Chemistry, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

2015-01-01

Highlights: • Band lineup of novel CoTiO{sub 3}/Ag{sub 3}VO{sub 4} composite is determined by semidirect XPS method. • The composite forms a type-II staggered heterojunction. • Valence and conduction-band offsets are 0.2 ± 0.3 and −0.6 ± 0.3 eV, respectively. • Band lineup determination is needed for understanding charge transfer at interfaces. - Abstract: The energy band diagram and band offsets of the novel CoTiO{sub 3}/Ag{sub 3}VO{sub 4} heterojunction photocatalyst are investigated by X-ray photoelectron spectroscopy for the first time. Excluding the strain effect, the valence-band and conduction-band offsets are determined to be 0.2 ± 0.3 eV and −0.6 ± 0.3 eV, respectively. The CoTiO{sub 3}/Ag{sub 3}VO{sub 4} composite forms a type-II heterojunction, for which the photogenerated charge carriers could be effectively separated. The results suggest that determination of the energy band structure is crucial for understanding the photogenerated charge transfer mechanism at the interfaces, hence the corresponding photocatalytic activity and would also be beneficial to the design of new and efficient heterostructure-based photocatalysts.

Nature of the valence band states in Bi2(Ca, Sr, La)3Cu2O8

International Nuclear Information System (INIS)

Wells, B.O.; Lindberg, P.A.P.; Shen, Z.; Dessau, D.S.; Spicer, W.E.; Lindau, I.; Mitzi, D.B.; Kapitulnik, A.

1990-01-01

We have used photoemission spectroscopy to examine the symmetry of the occupied states of the valence band for the La doped superconductor Bi 2 (Ca, Sr, La) 3 Cu 2 O 8 . While the oxygen states near the bottom of the 7 eV wide valence band exhibit predominantly O 2p z symmetry, the states at the top of the valence band extending to the Fermi level are found to have primarily O 2p x and O 2p y character. We have also examined anomalous intensity enhancements in the valence band feature for photon energies near 18 eV. These enhancements, which occur at photon energies ranging from 15.8 to 18.0 eV for the different valence band features, are not consistent with either simple final state effects or direct O2s transitions to unoccupied O2p states

X-Ray Photoelectron Spectroscopic Characterization of Iron Oxide Nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Radu, T., E-mail: Teodora.Radu@itim-cj.ro [National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103 Donat Street, 400293, Cluj Napoca (Romania); Iacovita, C. [Department of Pharmaceutical Physics-Biophysics, Faculty of Pharmacy, “Iuliu Hatieganu” University of Medicine and Pharmacy, 400349, Cluj-Napoca (Romania); Benea, D. [Faculty of Physics, Babes Bolyai University, 400271, Cluj-Napoca (Romania); Turcu, R. [National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103 Donat Street, 400293, Cluj Napoca (Romania)

2017-05-31

Highlights: • Characterization of three types of iron oxides magnetic nanoparticles. • A correlation between valence band XPS and the degree of iron oxidation is proposed. • Theoretical contributions of Fe in tetragonal and octahedral environment are shown. - Abstract: We report X-ray photoelectron spectroscopy (XPS) results on iron oxide magnetic nanoparticle (Fe{sub 3}O{sub 4}) synthesized using solvothermal reduction in the presence of polyethylene glycol. The magnetite obtained was employed as precursor for the synthesis of γ-Fe{sub 2}O{sub 3} (by oxygen dissociation) which in turn was transformed into α-Fe{sub 2}O{sub 3}. We confirmed the magnetite, maghemite and hematite structure by Fourier Transformed Spectroscopy (FTIR) and X-ray diffraction (XRD). The analysis of the XPS core level and valence band (VB) photoemission spectra for all investigated samples is discussed in terms of the degree of iron oxidation. This is of fundamental importance to better understand the electronic structure of the obtained iron oxide nanoparticles in order to control and improve their quality for specific biomedical applications. Moreover, theoretical band structure calculations are performed for magnetite and the separate contributions of Fe in tetragonal and octahedral environment are shown.

X-Band Linac Beam-Line for Medical Compton Scattering X-Ray Source

CERN Document Server

Dobashi, Katsuhiro; Ebina, Futaro; Fukasawa, Atsushi; Hayano, Hitoshi; Higo, Toshiyasu; Kaneyasu, Tatsuo; Ogino, Haruyuki; Sakamoto, Fumito; Uesaka, Mitsuru; Urakawa, Junji; Yamamoto, Tomohiko

2005-01-01

Compton scattering hard X-ray source for 10~80 keV are under construction using the X-band (11.424 GHz) electron linear accelerator and YAG laser at Nuclear Engineering Research laboratory, University of Tokyo. This work is a part of the national project on the development of advanced compact medical accelerators in Japan. National Institute for Radiological Science is the host institute and U. Tokyo and KEK are working for the X-ray source. Main advantage is to produce tunable monochromatic hard ( 10-80

Band alignment study of lattice-matched In{sub 0.49}Ga{sub 0.51}P and Ge using x-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Owen, Man Hon Samuel, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org; Zhou, Qian; Gong, Xiao; Yeo, Yee-Chia, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); Zhang, Zheng; Pan, Ji Sheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt [School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Nanyang Avenue, Singapore 639798 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

2014-09-08

Lattice-matched In{sub 0.49}Ga{sub 0.51}P was grown on a p-type Ge(100) substrate with a 10° off-cut towards the (111) by low temperature molecular beam epitaxy, and the band-alignment of In{sub 0.49}Ga{sub 0.51}P on Ge substrate was obtained by high resolution x-ray photoelectron spectroscopy. The valence band offset for the InGaP/Ge(100) interface was found to be 0.64 ± 0.12 eV, with a corresponding conduction band offset of 0.60 ± 0.12 eV. The InGaP/Ge interface is found to be of the type I band alignment.

Temperature-induced valence transition in EuNi2(Si0.20Ge0.80)2 studied by hard X-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Yamamoto, Kazuya; Kamakura, Nozomu; Taguchi, Munetaka; Chainani, Ashish; Takata, Yasutaka; Horiba, Koji; Shin, Shik; Ikenaga, Eiji; Mimura, Kojiro; Shiga, Masayuki; Wada, Hirofumi; Namatame, Hirofumi; Taniguchi, Masaki; Awaji, Mitsuhiro; Takeuchi, Akihisa; Nishino, Yoshinori; Miwa, Daigo; Tamasaku, Kenji; Ishikawa, Tetsuya; Kobayashi, Keisuke

2005-01-01

The temperature-induced mixed valence transition in EuNi 2 (Si 0.20 Ge 0.80 ) 2 has been investigated by hard X-ray (5940 eV) photoemission spectroscopy (HX-PES) for fractured surfaces, with a probing depth larger than 5 nm. The Eu 3d core-level states are studied below and above the critical valence transition temperature, T v = 80 K. The HX-PES spectra at 40 and 120 K show the mixed valence transition, with clear changes in the divalent and trivalent Eu 3d chemically shifted features. The Eu 3d HX-PES spectra indicate a mean valence of 2.70 ± 0.03 at 40 K which changes to 2.40 ± 0.03 at 120 K, in good accordance with the results of bulk Eu III -edge X-ray absorption spectroscopy measurements

Band alignment of HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N determined by angle-resolved x-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Owen, Man Hon Samuel, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org; Bhuiyan, Maruf Amin; Yeo, Yee-Chia, E-mail: m.owen.sg@ieee.org, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore); Zhang, Zheng; Pan, Ji Sheng [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Tok, Eng Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

2014-07-21

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N was studied by high resolution angle-resolved X-ray photoelectron spectroscopy measurements. The band bending near the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface was investigated, and the potential variation across the interface was taken into account in the band alignment calculation. It is observed that the binding energies for N 1s and Al 2p in In{sub 0.18}Al{sub 0.82}N decreases and the corresponding extracted valence band offsets increases with increasing θ (i.e., closer to the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface), as a result of an upward energy band bending towards the HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface. The resultant valence band offset and the conduction band offset for the ALD-HfO{sub 2}/In{sub 0.18}Al{sub 0.82}N interface calculated was found to be 0.69 eV and 1.01 eV, respectively.

Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2O8 superconductors

International Nuclear Information System (INIS)

Shen, Z.; Lindberg, P.A.P.; Wells, B.O.; Mitzi, D.B.; Lindau, I.; Spicer, W.E.; Kapitulnik, A.

1988-01-01

High-quality single crystals of Bi 2 CaSr 2 Cu 2 O 8 superconductors have been prepared and cleaved in ultrahigh vacuum. Low-energy electron diffraction measurements show that the surface structure is consistent with the bulk crystal structure. Ultraviolet photoemission and x-ray photoemission experiments were performed on these well-characterized sample surfaces. The valence-band and the core-level spectra obtained from the single-crystal surfaces are in agreement with spectra recorded from polycrystalline samples, justifying earlier results from polycrystalline samples. Cu satellites are observed both in the valence band and Cu 2p core level, signaling the strong correlation among the Cu 3d electrons. The O 1s core-level data exhibit a sharp, single peak at 529-eV binding energy without any clear satellite structures

Electronic structure of Ti4Fe2Ox as determined from first-principles APW + LO calculations and X-ray spectroscopy data

International Nuclear Information System (INIS)

Lavrentyev, A.A.; Gabrelian, B.V.; Shkumat, P.N.; Nikiforov, I.Ya.; Zavaliy, I.Yu.; Sinelnichenko, A.K.; Izvekov, A.V.; Khyzhun, O.Yu.

2010-01-01

Electronic properties of Ti 4 Fe 2 O oxide, a very promising hydrogen-storage material, were studied both from theoretical and experimental points of view employing the first-principles band-structure augmented plane wave + local orbitals (APW + LO) method with the WIEN2k code as well as X-ray photoelectron spectroscopy (XPS) and soft X-ray emission spectroscopy (SXES). Total and partial densities of states of the constituent atoms of Ti 4 Fe 2 O have been derived from the APW + LO calculations. The XPS valence-band spectra as well as the SXES Ti Lα, Fe Lα and O Kα bands have been measured for a series of Ti 4 Fe 2 O x oxides (x = 1.0, 0.5, and 0.25). The present APW + LO calculations reveal that, the O 2p-like states are the dominant contributors into the bottom of the valence band, whilst the top of the valence band and the bottom of the conduction band of Ti 4 Fe 2 O are dominated by contributions of the Fe 3d- and Ti 3d-like states. The APW + LO results are confirmed experimentally by a comparison on a common energy scale of the XPS valence-band spectra and the SXES Ti Lα, Fe Lα and O Kα bands of the Ti 4 Fe 2 O x oxides. The XPS Ti 2p, Fe 2p and O 1s core-level binding energies have been measured for the compounds under consideration.

X-band RF Photoinjector for Laser Compton X-ray and Gamma-ray Sources

Energy Technology Data Exchange (ETDEWEB)

Marsh, R. A. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Anderson, G. G. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Anderson, S. G. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Gibson, D. J. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States); Barty, C. J. [Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

2015-05-06

Extremely bright narrow bandwidth gamma-ray sources are expanding the application of accelerator technology and light sources in new directions. An X-band test station has been commissioned at LLNL to develop multi-bunch electron beams. This multi-bunch mode will have stringent requirements for the electron bunch properties including low emittance and energy spread, but across multiple bunches. The test station is a unique facility featuring a 200 MV/m 5.59 cell X-band photogun powered by a SLAC XL4 klystron driven by a Scandinova solid-state modulator. This paper focuses on its current status including the generation and initial characterization of first electron beam. Design and installation of the inverse-Compton scattering interaction region and upgrade paths will be discussed along with future applications.

Band-gap measurements of bulk and nanoscale hematite by soft x-ray spectroscopy

DEFF Research Database (Denmark)

Gilbert, B.; Frandsen, Cathrine; Maxey, E.R.

2009-01-01

Chemical and photochemical processes at semiconductor surfaces are highly influenced by the size of the band gap, and ability to control the band gap by particle size in nanomaterials is part of their promise. The combination of soft x-ray absorption and emission spectroscopies provides band......-gap determination in bulk and nanoscale itinerant electron semiconductors such as CdS and ZnO, but this approach has not been established for materials such as iron oxides that possess band-edge electronic structure dominated by electron correlations. We performed soft x-ray spectroscopy at the oxygen K...

Band alignment of atomic layer deposited MgO/Zn{sub 0.8}Al{sub 0.2}O heterointerface determined by charge corrected X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Yan, Baojun, E-mail: yanbj@ihep.ac.cn [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Liu, Shulin [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Yang, Yuzhen [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China); Department of Physics, Nanjing University, Nanjing P. O. Box 210093 (China); Heng, Yuekun [State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics of Chinese Academy of Sciences, Beijing P. O. Box 100049 (China)

2016-05-15

Highlights: • Band alignment of MgO/Zn{sub 0.8}Al{sub 0.2}O heterojunction were investigated systematically using charge corrected X-ray photoelectron spectroscopy. • Differential charging phenomenon is observed in determination VBOs of insulator/semiconductor heterojunction. • Valence and conduction band offsets have been determined to be 0.72 ± 0.11 eV and 3.26 ± 0.11 eV, respectively, with a type-II band line-up. - Abstract: Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn{sub 0.8}Al{sub 0.2}O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn{sub 0.8}Al{sub 0.2}O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn{sub 0.8}Al{sub 0.2}O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔE{sub V}) and conduction band offset (ΔE{sub C}) for the interface of the MgO/Zn{sub 0.8}Al{sub 0.2}O heterostructure have been constructed. An accurate value of ΔE{sub V} = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn{sub 0.8}Al{sub 0.2}O, a type-II heterojunction with a ΔE{sub C} of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.

Electronic structure simulation of chromium aluminum oxynitride by discrete variational-Xα method and X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Choi, Youngmin; Chang, Hyunju; Lee, Jae Do; Kim, Eunah; No, Kwangsoo

2002-01-01

We use a first-principles discrete variational (DV)-Xα method to investigate the electronic structure of chromium aluminum oxynitride. When nitrogen is substituted for oxygen in the Cr-Al-O system, the N2p level appears in the energy range between O2p and Cr3d levels. Consequently, the valence band of chromium aluminum oxynitride becomes broader and the band gap becomes smaller than that of chromium aluminum oxide, which is consistent with the photoelectron spectra for the valence band using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). We expect that this valence band structure of chromium aluminum oxynitride will modify the transmittance slope which is a requirement for photomask application. (author)

Valence band electronic structure and band alignment of LaAlO{sub 3}/SrTiO{sub 3}(111) heterointerfaces

Energy Technology Data Exchange (ETDEWEB)

Gabel, J.; Scheiderer, P.; Zapf, M.; Schuetz, P.; Sing, M.; Claessen, R. [Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), Universitaet Wuerzburg (Germany); Schlueter, C.; Lee, T.L. [Diamond Light Source, Didcot (United Kingdom)

2015-07-01

As in the famous LaAlO{sub 3}(LAO)/SrTiO{sub 3}(STO) (001) a two-dimensional electron system (2DES) also forms at the interface between LAO and STO in (111) orientation. A distinct feature of the (111) interface is its peculiar real space topology. Each bilayer represents a buckled honeycomb lattice similar to graphene which is known theoretically to host various topologically non-trivial states. Bilayer STO in proximity to the interface can be regarded as a three-orbital generalization of graphene with enhanced electron correlations making it a promising candidate for the realization of strongly correlated topological phases. We have investigated the electronic structure of the LAO/STO (111) heterostructure in relation to the oxygen vacancy concentration which we can control by synchrotron light irradiation and oxygen dosing. With hard X-ray photoemission we study the core levels, whereas resonant soft X-ray photoemission is used to probe the interfacial valence band (VB) states. Two VB features are found: a peak at the Fermi level associated with the 2DES and in-gap states at higher binding energies attributed to oxygen vacancies. By varying the oxygen vacancy contribution we can tune the emergence of the VB states and engineer the interfacial band alignment.

Hard X-ray emission spectroscopy with pink beam

Energy Technology Data Exchange (ETDEWEB)

Kvashnina, Kristina O.; Rossberg, Andre; Exner, Joerg; Scheinost, Andreas C. [Helmholtz-Zentrum Dresden-Rossendorf e.V., Dresden (Germany). Molecular Structures

2017-06-01

Valence-band X-ray emission spectroscopy (XES) with a ''pink beam'', i.e. a beam with large energy bandwidth produced by a double-multilayer monochromator, is introduced here to overcome the weak count rate of monochromatic beams produced by conventional double-crystal monochromators. Our results demonstrate that - in spite of the large bandwidth in the order of 100 eV - the high spectral resolution of the Johann-type spectrometer is maintained, while the two orders of magnitude higher flux greatly reduces the required counting time. The short working distance Johann-type X-ray emission spectrometer and multilayer monochromator is available at ROBL.

X-ray absorption intensity at high-energy region

International Nuclear Information System (INIS)

Fujikawa, Takashi; Kaneko, Katsumi

2012-01-01

We theoretically discuss X-ray absorption intensity in high-energy region far from the deepest core threshold to explain the morphology-dependent mass attenuation coefficient of some carbon systems, carbon nanotubes (CNTs), highly oriented pyrolytic graphite (HOPG) and fullerenes (C 60 ). The present theoretical approach is based on the many-body X-ray absorption theory including the intrinsic losses (shake-up losses). In the high-energy region the absorption coefficient has correction term dependent on the solid state effects given in terms of the polarization part of the screened Coulomb interaction W p . We also discuss the tail of the valence band X-ray absorption intensity. In the carbon systems C 2s contribution has some influence on the attenuation coefficient even in the high energy region at 20 keV.

Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

Directory of Open Access Journals (Sweden)

T. Yokoya, T. Nakamura, T. Matushita, T. Muro, H. Okazaki, M. Arita, K. Shimada, H. Namatame, M. Taniguchi, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada and T. Oguchi

2006-01-01

Full Text Available We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES of microwave plasma-assisted chemical vapor deposition diamond films with different B concentrations in order to study the origin of the metallic behavior of superconducting diamond. SXARPES results clearly show valence band dispersions with a bandwidth of ~23 eV and with a top of the valence band at gamma point in the Brillouin zone, which are consistent with the calculated valence band dispersions of pure diamond. Boron concentration-dependent band dispersions near the Fermi level (EF exhibit a systematic shift of EF, indicating depopulation of electrons due to hole doping. These SXARPES results indicate that diamond bands retain for heavy boron doping and holes in the diamond band are responsible for the metallic states leading to superconductivity at low temperature. A high-resolution photoemission spectroscopy spectrum near EF of a heavily boron-doped diamond superconductor is also presented.

Resonant inelastic scattering in dilute magnetic semiconductors by x-ray fluorescence spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Lawniczak-Jablonska, K. [Lawrence Berkeley National Lab., CA (United States)]|[Institute of Physics, Warsaw (Poland); Jia, J.J.; Underwood, J.H. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

As modern, technologically important materials have become more complex, element specific techniques have become invaluable in studying the electronic structure of individual components from the system. Soft x-ray fluorescence (SXF) and absorption (SXA) spectroscopies provide a unique means of measuring element and angular momentum density of electron states, respectively, for the valence and conducting bands in complex materials. X-ray absorption and the decay through x-ray emission are generally assumed to be two independent one-photon processes. Recent studies, however have demonstrated that SXF excited near the absorption threshold generate an array of spectral features that depend on nature of materials, particularly on the localization of excited states in s and d-band solids and that these two processes can no be longer treated as independent. Resonant SXF offers thus the new way to study the dynamics of the distribution of electronic valence states in the presence of a hole which is bound to the electron low lying in the conduction band. This process can simulate the interaction between hole-electron pair in wide gap semiconductors. Therefore such studies can help in understanding of transport and optics phenomena in the wide gap semiconductors. The authors report the result of Mn and S L-resonant emission in Zn{sub 1{minus}x}Mn{sub x}S (with x=0.2 and 0.3) and MnS as the energy of exciting radiation is tuned across the Mn and S L{sub 3,2} absorption edge, along with the resonant excited spectra from elemental Mn as a reference.

Investigation of electronic states of infinite-layer SrFeO2 epitaxial thin films by X-ray photoemission and absorption spectroscopies

International Nuclear Information System (INIS)

Chikamatsu, Akira; Matsuyama, Toshiya; Hirose, Yasushi; Kumigashira, Hiroshi; Oshima, Masaharu; Hasegawa, Tetsuya

2012-01-01

Highlights: ► Electronic states of infinite-layer SrFeO 2 films have been experimentally observed. ► Fe 3d states have higher densities of states in the valence-band region. ► Three peaks derived from Fe 3d states were observed in the conduction-band region. ► Indirect bandgap value was determined to be 1.3 eV. - Abstract: We investigated the electronic states of a single-crystal SrFeO 2 epitaxial thin film in the valence-band and conduction-band regions using synchrotron-radiation X-ray photoemission and absorption spectroscopies. Fe 2p–3d resonant photoemission measurements revealed that the Fe 3d states have higher densities of states at binding energies of 3–5 eV and 5–8.5 eV in the valence-band region. The O K-edge X-ray absorption spectrum exhibited three peaks in the Fe 3d-derived conduction band hybridized with O 2p states; these can be assigned to Fe 3d xy , 3d xz + 3d yz , and 3d x 2 –y 2 . In addition, the indirect bandgap value of the SrFeO 2 film was determined to be 1.3 eV by transmission and absorption spectroscopies.

Band alignment of ZnO/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Liu, Xinke, E-mail: xkliu@szu.edu.cn, E-mail: liuwj@szu.edu.cn; He, Jiazhu; Chen, Le; Li, Kuilong; Jia, Fang; Zeng, Yuxiang; Lu, Youming; Zhu, Deliang; Liu, Wenjun, E-mail: xkliu@szu.edu.cn, E-mail: liuwj@szu.edu.cn [College of Materials Science and Engineering, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060 (China); Zhang, Yuan [School of Physics and Electronic Information, Hua Bei Normal University, 100 Dongshan Road, Huai Bei 235000 (China); Liu, Qiang; Yu, Wenjie [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050 (China); Wu, Jing [Institute of Materials research and Engineering (IMRE), 2 Fusionopolis Way, Innovis, #08-03, 138634 Singapore (Singapore); He, Zhubing [Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055 (China); Ang, Kah-Wee [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore (Singapore)

2016-08-15

The energy band alignment between ZnO and multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The ZnO film was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 3.32 eV and a conduction band offset (CBO) of 1.12 eV were obtained for the ZnO/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the ZnO/ML-MoS{sub 2} interface were found to be 3.54 eV and 1.34 eV, respectively. With the CHF{sub 3} plasma treatment, the band alignment of the ZnO/ML-MoS{sub 2} interface has been changed from type II or staggered band alignment to type III or misaligned one, which favors the electron-hole pair separation. The band alignment difference is believed to be dominated by the down-shift in the core level of Zn 2p or the interface dipoles, which is caused by the interfacial layer rich in F.

Experimental observation of G banding verifying X-ray workers' chromosome translocation detected by FISH

International Nuclear Information System (INIS)

Sun Yuanming; Li Jin; Wang Qin; Tang Weisheng; Wang Zhiquan

2002-01-01

Objective: FISH is the most effective way of detecting chromosome aberration and many factors affect its accuracy. G-banding is used to verify the results of early X-ray workers' chromosome translocation examined by FISH. Methods: The chromosome translocations of early X-ray workers have been analysed by FISH (fluorescence in situ hybridization) and G-banding, yields of translocation treated with statistics. Results: The chromosome aberrations frequencies by tow methods are closely related. Conclusion: FISH is a feasible way to analyse chromosome aberrations of X-ray workers and reconstruct dose

A triboelectric closed loop band system for the generation of x-rays

Science.gov (United States)

Van Cleve, E.; Lucas, B.; Ganlieli, Z.; Wong, E. W.; Cortes, P.; Mehta, N.; Cuadra, D.; Fong, J.; Hansen, S.; Kotowski, A.; Camara, C. G.

2015-08-01

X-ray have been commercially produced using the same basic design since their discovery by Wilhelm Roentgen in 1895, for which he was awarded the first Nobel prize in physics. This technology requires high voltage elements, ultra high vacuum tubes, and high voltage electronics. The vacuum and high voltage drive up the price of x-ray technology and in order to bring down the cost, a brand new way to produce x-rays is needed. In 2008 Carlos Camara, Juan Escobar, Jonathan R. Hird, and Seth Putterman1 discovered that by pealing scotch tape in a vacuum you could create enough x-rays to take an x-ray radiograph of a finger. This lead to the formation of Tribogenics and the development of the rod and band x-ray architecture.

Electronic Structures of Purple Bronze KMo6O17 Studied by X-Ray Photoemission Spectra

Science.gov (United States)

Qin, Xiaokui; Wei, Junyin; Shi, Jing; Tian, Mingliang; Chen, Hong; Tian, Decheng

X-ray photoemission spectroscopy study has been performed for the purple bronze KMo6O17. The structures of conduction band and valence band are analogous to the results of ultraviolet photoemission spectra and are also consistent with the model of Travaglini et al., but the gap between conduction and valence band is insignificant. The shape of asymmetric and broadening line of O-1s is due to unresolved contributions from the many inequivalent oxygen sites in this crystal structure. Mo 3d core-level spectrum reveals that there are two kinds of valence states of Molybdenum (Mo+5 and Mo+6). The calculated average valence state is about +5.6, which is consistent with the expectation value from the composition of this material. The tail of Mo-3d spectrum toward higher binding energy is the consequence of the excitation of electron-hole pairs with singularity index of 0.21.

Clustering of germanium atoms in silica glass responsible for the 3.1 eV emission band studied by optical absorption and X-ray absorption fine structure analysis

International Nuclear Information System (INIS)

Yoshida, Tomoko; Muto, Shunsuke; Yuliati, Leny; Yoshida, Hisao; Inada, Yasuhiro

2009-01-01

Correlation between the 3.1 eV emission band and local atomic configuration was systematically examined for Ge + implanted silica glass by UV-vis optical absorption spectroscopy and X-ray absorption fine structure (XAFS) analysis. The 2.7 eV emission band, commonly observed in defective silica, was replaced by the sharp and intense 3.1 eV emission band for the Ge + fluence > 2 x 10 16 cm -2 , in which UV-vis absorption spectra suggested clustering of Ge atoms with the size ∼1 nm. XAFS spectroscopy indicated that the Ge atoms were under coordinated with oxygen atoms nearly at a neutral valence state on average. The present results are consistent with the previous ESR study but imply that the small Ge clusters rather than the O=Ge: complexes (point defects) are responsible for the 3.1 eV emission band.

Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

International Nuclear Information System (INIS)

Allen, M. W.; Zemlyanov, D. Y.; Waterhouse, G. I. N.; Metson, J. B.; Veal, T. D.; McConville, C. F.; Durbin, S. M.

2011-01-01

Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K α (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors.

Valence holes observed in nanodiamonds dispersed in water

Science.gov (United States)

Petit, Tristan; Pflüger, Mika; Tolksdorf, Daniel; Xiao, Jie; Aziz, Emad F.

2015-02-01

Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp2-hybridized carbon disappear, and holes in the valence band are observed.Colloidal dispersion is essential for most nanodiamond applications, but its influence on nanodiamond electronic properties remains unknown. Here we have probed the electronic structure of oxidized detonation nanodiamonds dispersed in water by using soft X-ray absorption and emission spectroscopies at the carbon and oxygen K edges. Upon dispersion in water, the π* transitions from sp2-hybridized carbon disappear, and holes in the valence band are observed. Electronic supplementary information (ESI) available: Experimental methods, details on XAS/XES normalization and background correction procedures. See DOI: 10.1039/c4nr06639a

A novel probe of intrinsic electronic structure: hard X-ray photoemission spectroscopy

International Nuclear Information System (INIS)

Takata, Y.; Tamasaku, K.; Nishino, Y.; Miwa, D.; Yabashi, M.; Ikenaga, E.; Horiba, K.; Arita, M.; Shimada, K.; Namatame, H.; Nohira, H.; Hattori, T.; Soedergren, S.; Wannberg, B.; Taniguchi, M.; Shin, S.; Ishikawa, T.; Kobayashi, K.

2005-01-01

We have realized hard X-ray (HX) photoemission spectroscopy (PES) with high throughput and high-energy resolution for core level and valence band studies using high-energy and high-brilliance synchrotron radiation at SPring-8. This is a brand new method because large escape depth of high-energy photoelectrons enables us to probe intrinsic bulk states free from surface condition. By use of a newly developed electron energy analyzer and well-focused X-rays, high-energy resolution of 75 meV (E/ΔE 79,000) was realized for 5.95 keV photoelectrons

Reformulated tight binding calculation for band discontinuity at CdTe/Hg xCd1-xTe heterointerfaces and their type I-type III transitions

International Nuclear Information System (INIS)

Ekpunobi, A.J.

2005-01-01

A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/Hg x Cd 1-x Te interface in the s 2 p 2 configuration. The calculated valence band discontinuity of 0.31 eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point

Photoionization cross-sections of ground and excited valence levels of actinides

Directory of Open Access Journals (Sweden)

Yarzhemsky Victor G.

2012-01-01

Full Text Available The photoionization cross-sections of ground and excited atomic states of actinide atoms were calculated by the Dirac-Fock-Slater method for two excitation energies of X-ray radiation (1253.6 eV and 1486.6 eV. These data are required for calculations of intensities of X-ray photoelectron spectra of actinide compound valence bands and interpretation of experimental spectra.

Simulating Valence-to-Core X-ray Emission Spectroscopy of Transition Metal Complexes with Time-Dependent Density Functional Theory.

Science.gov (United States)

Zhang, Yu; Mukamel, Shaul; Khalil, Munira; Govind, Niranjan

2015-12-08

Valence-to-core (VtC) X-ray emission spectroscopy (XES) has emerged as a powerful technique for the structural characterization of complex organometallic compounds in realistic environments. Since the spectrum represents electronic transitions from the ligand molecular orbitals to the core holes of the metal centers, the approach is more chemically sensitive to the metal-ligand bonding character compared with conventional X-ray absorption techniques. In this paper we study how linear-response time-dependent density functional theory (LR-TDDFT) can be harnessed to simulate K-edge VtC X-ray emission spectra reliably. LR-TDDFT allows one to go beyond the single-particle picture that has been extensively used to simulate VtC-XES. We consider seven low- and high-spin model complexes involving chromium, manganese, and iron transition metal centers. Our results are in good agreement with experiment.

Joint European x-ray monitor (JEM-X): x-ray monitor for ESA's

DEFF Research Database (Denmark)

Schnopper, H.W.; Budtz-Joergensen, C.; Westergaard, Niels Jørgen Stenfeldt

1996-01-01

JEM-X will extend the energy range of the gamma ray instruments on ESA's INTEGRAL mission (SPI, IBIS) to include the x-ray band. JEM-X will provide images with arcminute angular resolution in the 2 - 60 keV band. The baseline photon detection system consists of two identical, high pressure, imagi...

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

Science.gov (United States)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-10-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-01-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12 nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2 eV, which corresponds to a 3.2 eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior

X-ray photoelectron and x-ray-induced auger electron spectroscopic data, 2

International Nuclear Information System (INIS)

Baba, Yuji; Sasaki, Teikichi

1984-04-01

The intrinsic data of the X-ray photoelectron spectra (XPS) and X-ray-induced Auger electron spectra (XAES) for 4d transition-metals and related oxides were obtained by means of a spherical electron spectrometer. The metallic surfaces were cleaned by two different metheds : mechanical filing and Ar + ion etching. In the case of the Ar + io n bombarded Y, Zr, and Nb metals, the binding energies of the core-lines and the kinetic energies of the Auger lines shift from those for the mechanically filed surfaces. The energy shifts were interpreted in terms of the ion-induced lattice distortion of the metal surfaces. The oxides examined are typical compounds such as Y 2 O 3 , ZrO 2 , Nb 2 O 5 , MoO 3 and RuO 2 . The data consists of 4 wide scans, 33 core-line spectra, 10 valence-band spectra and 12 XAES spectra. The peak positions of the core-lines and the Auger lines were summarized in 6 tables together with their chemical shifts. (author)

X-ray photoelectron spectroscopy study of β-BaB2O4 optical surface

International Nuclear Information System (INIS)

Atuchin, V.V.; Kesler, V.G.; Kokh, A.E.; Pokrovsky, L.D.

2004-01-01

An X-ray photoelectron spectroscopy (XPS) study has been performed for (0 0 1) BaB 2 O 4 . The crystal surface has been polished mechanically and cleaned by chemical etching. In XPS observation, depth profiling has been produced by sputtering with Ar + 3 keV ions. Photoelectron binding energies of original element core levels and valence band have been measured as a function of sputtering time. The persistence of binding energies of barium and boron core levels and valence band structure has been found. For O 1 s core level the formation of new spectral components with lower binding energies has been revealed

Investigation of electronic states of infinite-layer SrFeO{sub 2} epitaxial thin films by X-ray photoemission and absorption spectroscopies

Energy Technology Data Exchange (ETDEWEB)

Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Matsuyama, Toshiya [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Hirose, Yasushi [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Kumigashira, Hiroshi; Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo, Tokyo 113-8656 (Japan); Hasegawa, Tetsuya [Department of Chemistry, University of Tokyo, Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

2012-01-15

Highlights: Black-Right-Pointing-Pointer Electronic states of infinite-layer SrFeO{sub 2} films have been experimentally observed. Black-Right-Pointing-Pointer Fe 3d states have higher densities of states in the valence-band region. Black-Right-Pointing-Pointer Three peaks derived from Fe 3d states were observed in the conduction-band region. Black-Right-Pointing-Pointer Indirect bandgap value was determined to be 1.3 eV. - Abstract: We investigated the electronic states of a single-crystal SrFeO{sub 2} epitaxial thin film in the valence-band and conduction-band regions using synchrotron-radiation X-ray photoemission and absorption spectroscopies. Fe 2p-3d resonant photoemission measurements revealed that the Fe 3d states have higher densities of states at binding energies of 3-5 eV and 5-8.5 eV in the valence-band region. The O K-edge X-ray absorption spectrum exhibited three peaks in the Fe 3d-derived conduction band hybridized with O 2p states; these can be assigned to Fe 3d{sub xy}, 3d{sub xz} + 3d{sub yz}, and 3d{sub x}{sup 2}{sub -y}{sup 2}. In addition, the indirect bandgap value of the SrFeO{sub 2} film was determined to be 1.3 eV by transmission and absorption spectroscopies.

High resolution hard X-ray photoemission using synchrotron radiation as an essential tool for characterization of thin solid films

International Nuclear Information System (INIS)

Kim, J.J.; Ikenaga, E.; Kobata, M.; Takeuchi, A.; Awaji, M.; Makino, H.; Chen, P.P.; Yamamoto, A.; Matsuoka, T.; Miwa, D.; Nishino, Y.; Yamamoto, T.; Yao, T.; Kobayashi, K.

2006-01-01

Recently, we have shown that hard X-ray photoemission spectroscopy using undulator X-rays at SPring-8 is quite feasible with both high resolution and high throughput. Here we report an application of hard X-ray photoemission spectroscopy to the characterization of electronic and chemical states of thin solid films, for which conventional PES is not applicable. As a typical example, we focus on the problem of the scatter in the reported band-gap values for InN. We show that oxygen incorporation into the InN film strongly modifies the valence and plays a crucial role in the band gap problem. The present results demonstrate the powerful applicability of high resolution photoemission spectroscopy with hard X-rays from a synchrotron source

Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy.

Science.gov (United States)

Yan, Baojun; Liu, Shulin; Heng, Yuekun; Yang, Yuzhen; Yu, Yang; Wen, Kaile

2017-12-01

Pure aluminum oxide (Al 2 O 3 ) and zinc aluminum oxide (Zn x Al 1-x O) thin films were deposited by atomic layer deposition (ALD). The microstructure and optical band gaps (E g ) of the Zn x Al 1-x O (0.2 ≤ x ≤ 1) films were studied by X-ray diffractometer and Tauc method. The band offsets and alignment of atomic-layer-deposited Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction were investigated in detail using charge-corrected X-ray photoelectron spectroscopy. In this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. Valence band offset (ΔE V ) and conduction band offset (ΔE C ) for the interface of the Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction have been constructed. An accurate value of ΔE V  = 0.82 ± 0.12 eV was obtained from various combinations of core levels of heterojunction with varied Al 2 O 3 thickness. Given the experimental E g of 6.8 eV for Al 2 O 3 and 5.29 eV for Zn 0.8 Al 0.2 O, a type-I heterojunction with a ΔE C of 0.69 ± 0.12 eV was found. The precise determination of the band alignment of Al 2 O 3 /Zn 0.8 Al 0.2 O heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.

Quasiparticle Lifetime Broadening in Resonant X-ray Scattering of NH4NO3.

Science.gov (United States)

Vinson, John; Jach, Terrence; Müller, Matthias; Unterumsberger, Rainer; Beckhoff, Burkhard

2016-07-15

It has been previously shown that two effects cause dramatic changes in the x-ray absorption and emission spectra from the N K edge of the insulating crystal ammonium nitrate. First, vibrational disorder causes major changes in the absorption spectrum, originating not only from the thermal population of phonons, but, significantly, from zero-point motion as well. Second, the anomalously large broadening ( ~ 4 eV) of the emission originating from nitrate σ states is due to unusually short lifetimes of quasiparticles in an otherwise extremely narrow band. In this work we investigate the coupling of these effects to core and valence excitons that are created as the initial x-ray excitation energy is progressively reduced toward the N edge. Using a GW /Bethe-Salpeter approach, we show the extent to which this anomalous broadening is captured by the GW approximation. The data and calculations demonstrate the importance that the complex self-energies (finite lifetimes) of valence bands have on the interpretation of emission spectra. We produce a scheme to explain why extreme lifetimes should appear in σ states of other similar compounds.

Electronic structure of ZrX2 (X = Se, Te)

Science.gov (United States)

Shkvarin, A. S.; Merentsov, A. I.; Shkvarina, E. G.; Yarmoshenko, Yu. M.; Píš, I.; Nappini, S.; Titov, A. N.

2018-03-01

The electronic structure of the ZrX2 (X = Se, Te) compounds has been studied using photoelectron, resonant photoelectron and X-ray absorption spectroscopy, theoretical calculations of the X-ray absorption spectra, and density of electronic states. It was found that the absorption spectra and valence band spectra are influenced by the chalcogen type. The results of the multiplet calculation of the Zr4+ atom show that the change in the splitting in the crystal field, which is described by the 10Dq parameter, is due to the change in the ratio of covalent and ionic contributions to the chemical bond. The resonance band near the Fermi level in the valence band spectra is observed for ZrTe2 in the Zr 3p-4d resonant excitation mode. The extent of photon energy indicates the charge localization on the Zr atom. Similar resonance band for ZrSe2 is absent; it indicates the presence of a gap at the Fermi level.

X-ray study of chemical bonding in actinides(IV) and lanthanides(III) hexa-cyanoferrates

International Nuclear Information System (INIS)

Dumas, T.

2011-01-01

Bimetallic cyanide molecular solids derived from Prussian blue are well known to foster long-range magnetic ordering and show an intense inter-valence charge transfer band resulting from an exchange interaction through the cyanide-bridge. For those reasons the ferrocyanide and ferricyanide building blocks have been chosen to study electronic delocalization and covalent character in actinide bonding using an experimental and theoretical approach based on X-ray absorption spectroscopy. In 2001, the actinide (IV) and early lanthanides (III) hexacyanoferrate have been found by powder X-ray diffraction to be isostructural (hexagonal, P6 3 /m group). Here, extended X-ray Absorption Fine Structure (EXAFS) at the iron K-edge and actinide L 3 -edge have been undertaken to probe the local environment of both actinides and iron cations. In an effort to describe the cyano bridge, a double edge fitting procedure including both iron and actinide edges and based on multiple scattering approach has been developed. We have also investigated the electronic properties of these molecular solids. Low energy electronic transitions have been used iron L 2,3 edge, nitrogen and carbon K-edge and also actinides N 4,5 edge to directly probe the valence molecular orbitals of the complex. Using a phenomenological approach, a clear distinctive behaviour between actinides and lanthanides has been shown. Then a theoretical approach using quantum chemistry calculation has shown more specifically the effect of covalency in the actinide-ferrocyanide bond. More specifically, π interactions were underlined by both theoretical and experimental methods. Finally, in agreement with the ionic character of the lanthanide bonding no inter-valence charge transfer has been observed in the corresponding optical spectra of these compounds. On the contrary, optical spectra for actinides adducts (except for thorium) show an intense inter-valence charge transfer band like in the transition metal cases which is

Measurement of valence band structure in arbitrary dielectric films

International Nuclear Information System (INIS)

Uhm, Han S.; Choi, Eun H.

2012-01-01

A new way of measuring the band structure of various dielectric materials using the secondary electron emission from Auger neutralization of ions is introduced. The first example of this measurement scheme is the magnesium oxide (MgO) films with respect to the application of the films in the display industries. The density of state in the valence bands of MgO film and MgO film with a functional layer (FL) deposited over a dielectric surface reveals that the density peak of film with a FL is considerably less than that of film, thereby indicating a better performance of MgO film with functional layer in display devices. The second example of the measurement is the boron-zinc oxide (BZO) films with respect to the application of the films to the development of solar cells. The measurement of density of state in BZO film suggests that a high concentration of boron impurity in BZO films may enhance the transition of electrons and holes through the band gap from the valence to the conduction band in zinc oxide crystals; thereby improving the conductivity of the film. Secondary electron emission by the Auger neutralization of ions is highly instrumental for the determination of the density of states in the valence band of dielectric materials.

Band alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface determined by charge corrected X-ray photoelectron spectroscopy

Science.gov (United States)

Yan, Baojun; Liu, Shulin; Yang, Yuzhen; Heng, Yuekun

2016-05-01

Pure magnesium (MgO) and zinc oxide doped with aluminum oxide (Zn0.8Al0.2O) were prepared via atomic layer deposition. We have studied the structure and band gap of bulk Zn0.8Al0.2O material by X-ray diffractometer (XRD) and Tauc method, and the band offsets and alignment of atomic layer deposited MgO/Zn0.8Al0.2O heterointerface were investigated systematically using X-ray photoelectron spectroscopy (XPS) in this study. Different methodologies, such as neutralizing electron gun, the use of C 1s peak recalibration and zero charging method, were applied to recover the actual position of the core levels in insulator materials which were easily influenced by differential charging phenomena. Schematic band alignment diagram, valence band offset (ΔEV) and conduction band offset (ΔEC) for the interface of the MgO/Zn0.8Al0.2O heterostructure have been constructed. An accurate value of ΔEV = 0.72 ± 0.11 eV was obtained from various combinations of core levels of heterojunction with varied MgO thickness. Given the experimental band gaps of 7.83 eV for MgO and 5.29 eV for Zn0.8Al0.2O, a type-II heterojunction with a ΔEC of 3.26 ± 0.11 eV was found. Band offsets and alignment studies of these heterojunctions are important for gaining deep consideration to the design of various optoelectronic devices based on such heterointerface.

X-ray photoelectron spectra structure of actinide compounds stipulated by electrons of the inner valence molecular orbitals (IVMO)

International Nuclear Information System (INIS)

Teterin, Yu. A.; Ivanov, K. E.

1997-01-01

Development of precise X-ray photoelectron spectroscopy using X-ray radiation hν< 1.5 KeV allowed to carry out immediate investigations of fine spectra structure of both weakly bond and deep electrons. Based on the experiments and the obtained results it may be concluded: 1. Under favourable conditions the inner valence molecular orbitals (IVMO) may form in all actinide compounds. 2. The XPS spectra fine structure stipulated by IVMO electrons allows to judge upon the degree of participation of the filled AO electrons in the chemical bond, on the structure o considered atom close environment and the bond lengths in compounds. For amorphous compounds the obtaining of such data based on X-ray structure analysis is restricted. 3. The summary contribution of IVMO electrons to the absolute value of the chemical bonding is comparable with the corresponding value of OMO electrons contribution to the atomic bonding. This fact is very important and new in chemistry. (author)

Reformulated tight binding calculation for band discontinuity at CdTe/Hg {sub x}Cd{sub 1-x}Te heterointerfaces and their type I-type III transitions

Energy Technology Data Exchange (ETDEWEB)

Ekpunobi, A.J. [Department of Physics and Industrial Physics, Nnamdi Azikiwe University, P.M.B. 5025, Awka, Anambra State (Nigeria)

2005-02-25

A recently reformulated tight binding method is used to calculate the valence band discontinuity at the CdTe/Hg {sub x}Cd{sub 1-x}Te interface in the s{sup 2}p{sup 2} configuration. The calculated valence band discontinuity of 0.31 eV at CdTe/HgTe interface is in good agreement with self-consistent calculation and accepted experimental value. Calculations were extended to alloy interfaces, which enabled the investigation of the band-offset problem at the transition point. Both valence band discontinuity ratio and conduction band discontinuity ratio show inflexions at the transition point.

Characterization of the electronic structure of C50Cl10 by means of soft x-ray spectroscopies

International Nuclear Information System (INIS)

Brena, Barbara; Luo Yi

2005-01-01

The electronic structure of the last synthesized fullerene molecule, the C 50 Cl 10 , has been characterized by theoretical simulation of x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and near-edge x-ray-absorption fine structure. All the calculations were performed at the gradient-corrected and hybrid density-functional theory levels. The combination of these techniques provides detailed information about the valence band and the unoccupied molecular orbitals, as well as about the carbon core orbitals

X-ray photoelectron spectroscopy study of {beta}-BaB{sub 2}O{sub 4} optical surface

Energy Technology Data Exchange (ETDEWEB)

Atuchin, V.V.; Kesler, V.G.; Kokh, A.E.; Pokrovsky, L.D

2004-02-29

An X-ray photoelectron spectroscopy (XPS) study has been performed for (0 0 1) BaB{sub 2}O{sub 4}. The crystal surface has been polished mechanically and cleaned by chemical etching. In XPS observation, depth profiling has been produced by sputtering with Ar{sup +} 3 keV ions. Photoelectron binding energies of original element core levels and valence band have been measured as a function of sputtering time. The persistence of binding energies of barium and boron core levels and valence band structure has been found. For O 1 s core level the formation of new spectral components with lower binding energies has been revealed.

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

Science.gov (United States)

Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

2017-10-01

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

Spectroscopic determination of valence band parameters in InP

International Nuclear Information System (INIS)

Lewis, R.A.; Lough, B.C.C.

2003-01-01

Full text: The general form of the Hamiltonian for an electron or hole in a semiconductor has been given by Luttinger. The valence band is characterised by three parameters - γ 1 , γ 2 , γ 3 -now commonly known as the Luttinger parameters. Despite many investigations there is still considerable uncertainty regarding the Luttinger parameters of InP. The situation has been reviewed by Hackenberg et al. These authors themselves sought to determine the Luttinger parameters by hot-electron luminescence and discovered that many Luttinger parameter triplets were consistent with their data. We employ a spectroscopic approach to estimating valence-band parameters in InP. Calculations have been made for both the unperturbed energy levels and the energy levels in a magnetic field of acceptor impurities in semiconductors characterised by different Luttinger parameters. We compare our recent experimental data for the transitions associated with the Zn acceptor impurity in InP in magnetic fields up to 30 T to determine the most appropriate set of valence-band parameters for InP

X-ray photoelectron spectra structure and chemical bonding in AmO2

Directory of Open Access Journals (Sweden)

Teterin Yury A.

2015-01-01

Full Text Available Quantitative analysis was done of the X-ray photoelectron spectra structure in the binding energy range of 0 eV to ~35 eV for americium dioxide (AmO2 valence electrons. The binding energies and structure of the core electronic shells (~35 eV-1250 eV, as well as the relativistic discrete variation calculation results for the Am63O216 and AmO8 (D4h cluster reflecting Am close environment in AmO2 were taken into account. The experimental data show that the many-body effects and the multiplet splitting contribute to the spectral structure much less than the effects of formation of the outer (0-~15 eV binding energy and the inner (~15 eV-~35 eV binding energy valence molecular orbitals. The filled Am 5f electronic states were shown to form in the AmO2 valence band. The Am 6p electrons participate in formation of both the inner and the outer valence molecular orbitals (bands. The filled Am 6p3/2 and the O 2s electronic shells were found to make the largest contributions to the formation of the inner valence molecular orbitals. Contributions of electrons from different molecular orbitals to the chemical bond in the AmO8 cluster were evaluated. Composition and sequence order of molecular orbitals in the binding energy range 0-~35 eV in AmO2 were established. The experimental and theoretical data allowed a quantitative scheme of molecular orbitals for AmO2, which is fundamental for both understanding the chemical bond nature in americium dioxide and the interpretation of other X-ray spectra of AmO2.

S-band linac-based X-ray source with {pi}/2-mode electron linac

Energy Technology Data Exchange (ETDEWEB)

Deshpande, Abhay, E-mail: abhay@post.kek.jp [Department of Accelerator Science, School of High Energy Accelerator Science, Graduate University for Advanced Studies, Shonan International Village, Hayama, Miura, Kanagawa 240-0193 (Japan); Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Araki, Sakae [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Dixit, Tanuja [Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Fukuda, Masafumi [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Krishnan, R; Pethe, Sanjay [Society for Applied Microwave Electronic Engineering and Research (SAMEER), R and D Laboratory of the Government of India, IIT Campus, Powai, Mumbai 400 076 (India); Sakaue, Kazuyuki [Waseda University, Shinjuku-ku, Tokyo 169-8555 (Japan); Terunuma, Nobuhiro; Urakawa, Junji [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Washio, Masakazu [Waseda University, Shinjuku-ku, Tokyo 169-8555 (Japan)

2011-05-01

The activities with the compact X-ray source are attracting more attention, particularly for the applications of the source in medical fields. We propose the fabrication of a compact X-ray source using the SAMEER electron linear accelerator and the KEK laser undulator X-ray source (LUCX) technologies. The linac developed at SAMEER is a standing wave side-coupled S-band linac operating in the {pi}/2 mode. In the proposed system, a photocathode RF gun will inject bunches of electrons in the linac to accelerate and achieve a high-energy, low-emittance beam. This beam will then interact with the laser in the laser cavity to produce X-rays of a type well suited for various applications. The side-coupled structure will make the system more compact, and the {pi}/2 mode of operation will enable a high repetition rate operation, which will help to increase the X-ray yield.

Quasiparticle lifetime broadening in resonant x-ray scattering of NH4NO3

Science.gov (United States)

Vinson, John; Jach, Terrence; Müller, Matthias; Unterumsberger, Rainer; Beckhoff, Burkhard

2016-07-01

It has been previously shown that two effects cause dramatic changes in the x-ray absorption and emission spectra from the N K edge of the insulating crystal ammonium nitrate. First, vibrational disorder causes major changes in the absorption spectrum, originating not only from the thermal population of phonons, but, significantly, from zero-point motion as well. Second, the anomalously large broadening (˜4 eV) of the emission originating from nitrate σ states is due to the unusually short lifetimes of quasiparticles in an otherwise extremely narrow band. In this work, we investigate the coupling of these effects to core and valence excitons that are created as the initial x-ray excitation energy is progressively reduced toward the N edge. Using a G W /Bethe-Salpeter approach, we show the extent to which this anomalous broadening is captured by the G W approximation. The data and calculations demonstrate the importance that the complex self-energies (finite lifetimes) of the valence bands have on the interpretation of emission spectra. We produce a scheme to explain why extreme lifetimes should appear in σ states of other similar compounds.

Characterization of the Valence and Conduction Band Levels of n = 1 2D Perovskites: A Combined Experimental and Theoretical Investigation

KAUST Repository

Silver, Scott

2018-02-13

This study presents a combined experimental and theoretical study of the electronic structure of two 2D metal halide perovskite films. Ultraviolet and inverse photoemission spectroscopies are performed on solution-processed thin films of the n = 1 layered perovskite butylammonium lead iodide and bromide, BA2PbI4 and BA2PbBr4, characterized by optical absorption and X-ray diffraction, to determine their valence and conduction band densities of states, transport gaps, and exciton binding energies. The electron spectroscopy results are compared with the densities of states determined by density functional theory calculations. The remarkable agreement between experiment and calculation enables a detailed identification and analysis of the organic and inorganic contributions to the valence and conduction bands of these two hybrid perovskites. The electron affinity and ionization energies are found to be 3.1 and 5.8 eV for BA2PbI4, and 3.1 and 6.5 eV for BA2PbBr4. The exciton binding energies are estimated to be 260 and 300 meV for the two materials, respectively. The 2D lead iodide and bromide perovskites exhibit significantly less band dispersion and a larger density of states at the band edges than the 3D analogs. The effects of using various organic ligands are also discussed.

Electronic structure of the dilute magnetic semiconductor G a1 -xM nxP from hard x-ray photoelectron spectroscopy and angle-resolved photoemission

Science.gov (United States)

Keqi, A.; Gehlmann, M.; Conti, G.; Nemšák, S.; Rattanachata, A.; Minár, J.; Plucinski, L.; Rault, J. E.; Rueff, J. P.; Scarpulla, M.; Hategan, M.; Pálsson, G. K.; Conlon, C.; Eiteneer, D.; Saw, A. Y.; Gray, A. X.; Kobayashi, K.; Ueda, S.; Dubon, O. D.; Schneider, C. M.; Fadley, C. S.

2018-04-01

We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) G a0.98M n0.02P and compared it to that of an undoped GaP reference sample, using hard x-ray photoelectron spectroscopy (HXPS) and hard x-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between G a0.98M n0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The G a0.98M n0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations and a prior HARPES study of G a0.97M n0.03As and GaAs [Gray et al., Nat. Mater. 11, 957 (2012), 10.1038/nmat3450], demonstrating the strong similarity between these two materials. The Mn 2 p and 3 s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP.

Bulk band gaps in divalent hexaborides: A soft x-ray emission study

International Nuclear Information System (INIS)

Denlinger, Jonathan D.; Gweon, Gey-Hong; Allen, James W.; Bianchi, Andrea D.; Fisk, Zachary

2001-01-01

Boron K-edge soft x-ray emission and absorption are used to address the fundamental question of whether divalent hexaborides are intrinsic semimetals or defect-doped bandgap insulators. These bulk sensitive measurements, complementary and consistent with surface-sensitive angle-resolved photoemission experiments, confirm the existence of a bulk band gap and the location of the chemical potential at the bottom of the conduction band

Valence band structure of PDMS surface and a blend with MWCNTs: A UPS and MIES study of an insulating polymer

Energy Technology Data Exchange (ETDEWEB)

Schmerl, Natalya M.; Khodakov, Dmitriy A.; Stapleton, Andrew J.; Ellis, Amanda V.; Andersson, Gunther G., E-mail: gunther.andersson@flinders.edu.au

2015-10-30

Graphical abstract: - Highlights: • Valence electron spectroscopy was performed on an insulating polymer using different charge compensation methods. • MWCNT were embedded in PDMS and found to be the most effective method for reducing the charging of the insulating polymer. • The valence band spectrum of PDMS was obtained via MIES and UPS. • Ion scattering spectroscopy was used to determine the concentration depth profile of the PDMS in the sample. - Abstract: The use of polydimethylsiloxane (PDMS) is increasing with new technologies working toward compact, flexible and transparent devices for use in medical and microfluidic systems. Electronic characterization of PDMS and other insulating materials is difficult due to charging, yet necessary for many applications where the interfacial structure is vital to device function or further modification. The outermost layer in particular is of importance as this is the area where chemical reactions such as surface functionalization will occur. Here, we investigate the valence band structure of the outermost layer and near surface area of PDMS through the use of metastable induced photoelectron spectroscopy (MIES) paired with ultraviolet photoelectron spectroscopy (UPS). The chemical composition of the samples under investigation were measured via X-ray photoelectron spectroscopy (XPS), and the vertical distribution of the polymer was shown with neutral impact collision ion scattering spectroscopy (NICISS). Three separate methods for charge compensation are used for the samples, and their effectiveness is compared.

Chemical state analysis of heat-treated 6, 13-bis(triisopropylsilylethynyl) pentacene investigated by XPS valence band spectra, XANES spectra and first-principles calculation

International Nuclear Information System (INIS)

Muro, Maiko; Natsume, Yutaka; Kikuma, Jun; Setoyama, Hiroyuki

2014-01-01

X-ray photoelectron spectroscopy (XPS) valence band spectra reflect the chemical bonding states. To take this advantage, we tried to interpret experimental spectra by the occupied density of states (DOS) based on first principles calculation. In this work, we discussed XPS and X-ray Absorption Near Edge Structure (XANES) spectra of 6, 13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pen), which is well known as an organic semiconductor. We studied chemical structure change of TIPS-Pen caused by heat-treatment at 300degC under nitrogen and under the air. It has been suggested that the structural change of pentacene skeleton by Diels-Alder type reaction occurs in both cases. In addition, the sample heat-treated under the air showed desorption of the isopropyl group and increase of oxygen concentration. (author)

Valence band variation in Si (110) nanowire induced by a covered insulator

International Nuclear Information System (INIS)

Hong-Hua, Xu; Xiao-Yan, Liu; Yu-Hui, He; Gang, Du; Ru-Qi, Han; Jin-Feng, Kang; Chun, Fan; Ai-Dong, Sun

2010-01-01

In this work, we investigate strain effects induced by the deposition of gate dielectrics on the valence band structures in Si (110) nanowire via the simulation of strain distribution and the calculation of a generalized 6×6k·p strained valence band. The nanowire is surrounded by the gate dielectric. Our simulation indicates that the strain of the amorphous SiO 2 insulator is negligible without considering temperature factors. On the other hand, the thermal residual strain in a nanowire with amorphous SiO 2 insulator which has negligible lattice misfit strain pushes the valence subbands upwards by chemical vapour deposition and downwards by thermal oxidation treatment. In contrast with the strain of the amorphous SiO 2 insulator, the strain of the HfO 2 gate insulator in Si (110) nanowire pushes the valence subbands upwards remarkably. The thermal residual strain by HfO 2 insulator contributes to the up-shifting tendency. Our simulation results for valence band shifting and warping in Si nanowires can provide useful guidance for further nanowire device design. (classical areas of phenomenology)

Effects of surface condition on the work function and valence-band position of ZnSnN2

Science.gov (United States)

Shing, Amanda M.; Tolstova, Yulia; Lewis, Nathan S.; Atwater, Harry A.

2017-12-01

ZnSnN2 is an emerging wide band gap earth-abundant semiconductor with potential applications in photonic devices such as solar cells, LEDs, and optical sensors. We report the characterization by ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy of reactively radio-frequency sputtered II-IV-nitride ZnSnN2 thin films. For samples transferred in high vacuum, the ZnSnN2 surface work function was 4.0 ± 0.1 eV below the vacuum level, with a valence-band onset of 1.2 ± 0.1 eV below the Fermi level. The resulting band diagram indicates that the degenerate bulk Fermi level position in ZnSnN2 shifts to mid-gap at the surface due to band bending that results from equilibration with delocalized surface states within the gap. Brief (< 10 s) exposures to air, a nitrogen-plasma treatment, or argon-ion sputtering caused significant chemical changes at the surface, both in surface composition and interfacial energetics. The relative band positioning of the n-type semiconductor against standard redox potentials indicated that ZnSnN2 has an appropriate energy band alignment for use as a photoanode to effect the oxygen-evolution reaction.

Control of Ge1-x-ySixSny layer lattice constant for energy band alignment in Ge1-xSnx/Ge1-x-ySixSny heterostructures

Science.gov (United States)

Fukuda, Masahiro; Watanabe, Kazuhiro; Sakashita, Mitsuo; Kurosawa, Masashi; Nakatsuka, Osamu; Zaima, Shigeaki

2017-10-01

The energy band alignment of Ge1-xSnx/Ge1-x-ySixSny heterostructures was investigated, and control of the valence band offset at the Ge1-xSnx/Ge1-x-ySixSny heterointerface was achieved by controlling the Si and Sn contents in the Ge1-x-ySixSny layer. The valence band offset in the Ge0.902Sn0.098/Ge0.41Si0.50Sn0.09 heterostructure was evaluated to be as high as 330 meV, and its conduction band offset was estimated to be 150 meV by considering the energy bandgap calculated from the theoretical prediction. In addition, the formation of the strain-relaxed Ge1-x-ySixSny layer was examined and the crystalline structure was characterized. The epitaxial growth of a strain-relaxed Ge0.64Si0.21Sn0.15 layer with the degree of strain relaxation of 55% was examined using a virtual Ge substrate. Moreover, enhancement of the strain relaxation was demonstrated by post-deposition annealing, where a degree of strain relaxation of 70% was achieved after annealing at 400 °C. These results indicate the possibility for enhancing the indirect-direct crossover with a strained and high-Sn-content Ge1-xSnx layer on a strain-relaxed Ge1-x-ySixSny layer, realizing preferable carrier confinement by type-I energy band alignment with high conduction and valence band offsets.

Electronic structures and valence band splittings of transition metals doped GaNs

International Nuclear Information System (INIS)

Lee, Seung-Cheol; Lee, Kwang-Ryeol; Lee, Kyu-Hwan

2007-01-01

For a practical viewpoint, presence of spin splitting of valence band in host semiconductors by the doping of transition metal (TM) ions is an essential property when designing a diluted magnetic semiconductors (DMS) material. The first principle calculations were performed on the electronic and magnetic structure of 3d transition metal doped GaN. V, Cr, and Mn doped GaNs could not be candidates for DMS materials since most of their magnetic moments is concentrated on the TM ions and the splittings of valence band were negligible. In the cases of Fe, Co, Ni, and Cu doped GaNs, on the contrary, long-ranged spin splitting of valence band was found, which could be candidates for DMS materials

Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

KAUST Repository

Sun, Haiding

2017-10-16

Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

Cerium valence change in the solid solutions Ce(Rh1-xRux)Sn

International Nuclear Information System (INIS)

Niehaus, Oliver; Riecken, Jan F.; Winter, Florian; Poettgen, Rainer; Muenster Univ.; Abdala, Paula M.; Chevalier, Bernard

2013-01-01

The solid solutions Ce(Rh 1-x Ru x )Sn were investigated by means of susceptibility measurements, specific heat, electrical resistivity, X-ray absorption spectroscopy (XAS), and 119 Sn Moessbauer spectroscopy. Magnetic measurements as well as XAS data show a cerium valence change in dependence on the ruthenium content. Higher ruthenium content causes an increase from 3.22 to 3.45 at 300 K. Furthermore χ and χ -1 data indicate valence fluctuation for cerium as a function of temperature. For example, Ce(Rh 0.8 Ru 0.2 )Sn exhibits valence fluctuations between 3.42 and 3.32 in the temperature range of 10 to 300 K. This could be proven by using the interconfiguration fluctuation (ICF) model introduced by Sales and Wohlleben. Cerium valence change does not influence the tin atoms as proven by 119 Sn Moessbauer spectroscopy, but it influences the electrical properties. Ce(Rh 0.9 Ru 0.1 )Sn behaves like a typical valence fluctuating compound, and higher ruthenium content causes an increase of the metallic behavior. (orig.)

Location of the valence band maximum in the band structure of anisotropic 1 T'-ReSe2

Science.gov (United States)

Eickholt, P.; Noky, J.; Schwier, E. F.; Shimada, K.; Miyamoto, K.; Okuda, T.; Datzer, C.; Drüppel, M.; Krüger, P.; Rohlfing, M.; Donath, M.

2018-04-01

Transition-metal dichalcogenides (TMDCs) are a focus of current research due to their fascinating optical and electronic properties with possible technical applications. ReSe2 is an interesting material of the TMDC family, with unique anisotropic properties originating from its distorted 1 T structure (1 T '). To develop a fundamental understanding of the optical and electric properties, we studied the underlying electronic structure with angle-resolved photoemission (ARPES) as well as band-structure calculations within the density functional theory (DFT)-local density approximation (LDA) and GdW approximations. We identified the Γ ¯M¯1 direction, which is perpendicular to the a axis, as a distinct direction in k space with the smallest bandwidth of the highest valence band. Using photon-energy-dependent ARPES, two valence band maxima are identified within experimental limits of about 50 meV: one at the high-symmetry point Z , and a second one at a non-high-symmetry point in the Brillouin zone. Thus, the position in k space of the global valence band maximum is undecided experimentally. Theoretically, an indirect band gap is predicted on a DFT-LDA level, while quasiparticle corrections lead to a direct band gap at the Z point.

X-ray absorption and reflection as probes of the GaN conduction bands: Theory and experiments

Energy Technology Data Exchange (ETDEWEB)

Lambrecht, W.R.L.; Rashkeev, S.N.; Segall, B. [Case Western Reserve Univ., Cleveland, OH (United States)] [and others

1997-04-01

X-ray absorption measurements are a well-known probe of the unoccupied states in a material. The same information can be obtained by using glancing angle X-ray reflectivity. In spite of several existing band structure calculations of the group III nitrides and previous optical studies in UV range, a direct probe of their conduction band densities of states is of interest. The authors performed a joint experimental and theoretical investigation using both of these experimental techniques for wurtzite GaN.

Hard-X-ray photoelectron spectroscopy of NaxCoO2.yH2O

International Nuclear Information System (INIS)

Chainani, A.; Yokoya, T.; Takata, Y.; Tamasaku, K.; Taguchi, M.; Shimojima, T.; Kamakura, N.; Horiba, K.; Tsuda, S.; Shin, S.; Miwa, D.; Nishino, Y.; Ishikawa, T.; Yabashi, M.; Kobayashi, K.; Namatame, H.; Taniguchi, M.; Takada, K.; Sasaki, T.; Sakurai, H.; Takayama-Muromachi, E.

2005-01-01

We study the bulk electronic structure of Na x CoO 2 .yH 2 O using Hard X-ray (HX, hν = 5.95KeV) synchrotron photoelectron spectroscopy (PES). The Co 2p core level spectra show well-separated Co 3+ and Co 4+ ions. Cluster calculations suggest low spin Co 3+ and Co 4+ character, and a moderate on-site Coulomb correlation energy U dd ∼3-5.5eV. Photon-dependent valence band PES identifies Co 3d and O 2p derived states, in near agreement with band structure calculations. We discuss the importance of HX-PES for studying correlated transition metal oxides

JEM-X: The X-ray monitor on INTEGRAL

DEFF Research Database (Denmark)

Budtz-Jørgensen, Carl; Lund, Niels; Westergaard, Niels Jørgen Stenfeldt

2004-01-01

The INTEGRAL X-ray monitor, JEM-X, (together with the two gamma ray instruments, SPI and IBIS) provides simultaneous imaging with arcminute angular resolution in the 3-35 keV band. The good angular resolution and low energy response of JEM-X plays an important role in the detection and identifica......The INTEGRAL X-ray monitor, JEM-X, (together with the two gamma ray instruments, SPI and IBIS) provides simultaneous imaging with arcminute angular resolution in the 3-35 keV band. The good angular resolution and low energy response of JEM-X plays an important role in the detection...

Galaxies in the X-ray Band

Science.gov (United States)

Hornschemeier, Ann

2008-01-01

This talk will provide a brief review of progress on X-ray emission from normal (non-AGN) galaxy populations, including important constraints on the evolution of accreting binary populations over important cosmological timescales. We will also look to the future, anticipating constraints from near-term imaging hard X-ray missions such as NuSTAR, Simbol-X and NeXT and then the longer-term prospects for studying galaxies with the Generation-X mission.

Relation between X-Ray and γ-Ray Emissions for Fermi Blazars ...

Indian Academy of Sciences (India)

Abstract. Using γ-ray band data detected by Fermi Large Area Tele- scope (LAT) and X-ray band data for 78 blazars, we find a medium cor- relation between X-ray and γ-ray fluxes in the average state. A medium anticorrelation is also found between X-ray (1 KeV) mean spectral index αx and γ-ray mean spectral index αγ for ...

Studies on the valence electronic structure of Fe and Ni in FexNi1−x ...

Indian Academy of Sciences (India)

structure of Fe and Ni in various Fex Ni1−x alloys. Since Kβ-to-Kα X-ray intensity ratio has been reported [2–7] to be a sensitive physical parameter to investigate the changes in the valence electronic structure of 3d-transition metals [2], we have undertaken the study of the valence electronic structure of Fe and Ni in the Fex ...

Material Discriminated X-Ray CT System by Using New X-Ray Imager with Energy Discriminate Function

Directory of Open Access Journals (Sweden)

Toru Aoki

2008-04-01

Full Text Available Material discriminated X-ray CT system has been constructed by using conventional X-ray tube (white X-ray source and photon-counting X-ray imager as an application with energy band detection. We have already reported material identify X-ray CT using K-shell edge method elsewhere. In this report the principle of material discrimination was adapted the separation of electron-density and atomic number from attenuation coefficient mapping in X-ray CT reconstructed image in two wavelength X-ray CT method using white X-ray source and energy discriminated X-ray imager by using two monochrome X-ray source method. The measurement phantom was prepared as four kinds material rods (Carbon(C, Iron(Fe, Copper(Cu, Titanium(Ti rods of 3mm-diameter inside an aluminum(Al rod of 20mm-diameter. We could observed material discriminated X-ray CT reconstructed image, however, the discrimination properties were not good than two monochrome X-ray CT method. This results was could be explained because X-ray scattering, beam-hardening and so on based on white X-ray source, which could not observe in two monochrome X-ray CT method. However, since our developed CdTe imager can be detect five energy-bands at the same time, we can use multi-band analysis to decrease the least square error margin. We will be able to obtain more high separation in atomic number mapping in X-ray CT reconstructed image by using this system.

Systematic study on intermolecular valence-band dispersion in molecular crystalline films

International Nuclear Information System (INIS)

Yamane, Hiroyuki; Kosugi, Nobuhiro

2015-01-01

Highlights: • Intermolecular valence-band dispersion of crystalline films of phthalocyanines. • Intermolecular transfer integral versus lattice constant. • Site-specific intermolecular interaction and resultant valence-band dispersion. • Band narrowing effect induced by elevated temperature. - Abstract: Functionalities of organic semiconductors are governed not only by individual properties of constituent molecules but also by solid-state electronic states near the Fermi level such as frontier molecular orbitals, depending on weak intermolecular interactions in various conformations. The individual molecular property has been widely investigated in detail; on the other hand, the weak intermolecular interaction is difficult to investigate precisely due to the presence of the structural and thermal energy broadenings in organic solids. Here we show quite small but essential intermolecular valence band dispersions and their temperature dependence of sub-0.1-eV scale in crystalline films of metal phthalocyanines (H_2Pc, ZnPc, CoPc, MnPc, and F_1_6ZnPc) by using angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. The observed bands show intermolecular and site dependent dispersion widths, phases, and periodicities, for different chemical substitution of terminal groups and central metals in the phthalocyanine molecule. The precise and systematic band-dispersion measurement would be a credible approach toward the comprehensive understanding of intermolecular interactions and resultant charge transport properties as well as their tuning by substituents in organic molecular systems.

Band alignment of HfO{sub 2}/multilayer MoS{sub 2} interface determined by x-ray photoelectron spectroscopy: Effect of CHF{sub 3} treatment

Energy Technology Data Exchange (ETDEWEB)

Liu, Xinke; He, Jiazhu; Tang, Dan; Jia, Fang; Lu, Youming, E-mail: ymlu@szu.edu.cn; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun [College of Materials Science and Engineering, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060 (China); Liu, Qiang; Wen, Jiao; Yu, Wenjie, E-mail: casan@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS,865 Chang Ning Road, Shanghai 200050 (China); Pan, Jisheng [Institute of Materials Research and Engineering, Agency for Science Technology and Research, Singapore 117602 (Singapore); He, Zhubing [Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055 (China); Ang, Kah-Wee [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117583 (Singapore)

2015-09-07

The energy band alignment between HfO{sub 2}/multilayer (ML)-MoS{sub 2} was characterized using high-resolution x-ray photoelectron spectroscopy. The HfO{sub 2} was deposited using an atomic layer deposition tool, and ML-MoS{sub 2} was grown by chemical vapor deposition. A valence band offset (VBO) of 1.98 eV and a conduction band offset (CBO) of 2.72 eV were obtained for the HfO{sub 2}/ML-MoS{sub 2} interface without any treatment. With CHF{sub 3} plasma treatment, a VBO and a CBO across the HfO{sub 2}/ML-MoS{sub 2} interface were found to be 2.47 eV and 2.23 eV, respectively. The band alignment difference is believed to be dominated by the down-shift in the core level of Hf 4d and up-shift in the core level of Mo 3d, or the interface dipoles, which caused by the interfacial layer in rich of F.

Theoretical band structure of the superconducting antiperovskite oxide Sr3-xSnO

Science.gov (United States)

Ikeda, Atsutoshi; Fukumoto, Toshiyuki; Oudah, Mohamed; Hausmann, Jan Niklas; Yonezawa, Shingo; Kobayashi, Shingo; Sato, Masatoshi; Tassel, Cédric; Takeiri, Fumitaka; Takatsu, Hiroshi; Kageyama, Hiroshi; Maeno, Yoshiteru

2018-05-01

In order to investigate the position of the strontium deficiency in superconductive Sr3-xSnO, we synthesized and measured X-ray-diffraction patterns of Sr3-xSnO (x ∼ 0.5). Because no clear peaks originating from superstructures were observed, strontium deficiency is most likely to be randomly distributed. We also performed first-principles band-structure calculations on Sr3-xSnO (x = 0, 0.5) using two methods: full-potential linearized-augmented plane-wave plus local orbitals method and the Korringa-Kohn-Rostoker Green function method combined with the coherent potential approximation. We revealed that the Fermi energy of Sr3-xSnO in case of x ∼ 0.5 is about 0.8 eV below the original Fermi energy of the stoichiometric Sr3SnO, where the mixing of the valence p and conduction d orbitals are considered to be small.

Chemical and valence reconstruction at the surface of SmB6 revealed by means of resonant soft x-ray reflectometry

Science.gov (United States)

Zabolotnyy, V. B.; Fürsich, K.; Green, R. J.; Lutz, P.; Treiber, K.; Min, Chul-Hee; Dukhnenko, A. V.; Shitsevalova, N. Y.; Filipov, V. B.; Kang, B. Y.; Cho, B. K.; Sutarto, R.; He, Feizhou; Reinert, F.; Inosov, D. S.; Hinkov, V.

2018-05-01

Samarium hexaboride (SmB6), a Kondo insulator with mixed valence, has recently attracted much attention as a possible host for correlated topological surface states. Here, we use a combination of x-ray absorption and reflectometry techniques, backed up with a theoretical model for the resonant M4 ,5 absorption edge of Sm and photoemission data, to establish laterally averaged chemical and valence depth profiles at the surface of SmB6. We show that upon cleaving, the highly polar (001) surface of SmB6 undergoes substantial chemical and valence reconstruction, resulting in boron termination and a Sm3 + dominated subsurface region. Whereas at room temperature, the reconstruction occurs on a timescale of less than 2 h, it takes about 24 h below 50 K. The boron termination is eventually established, irrespective of the initial termination. Our findings reconcile earlier depth resolved photoemission and scanning tunneling spectroscopy studies performed at different temperatures and are important for better control of surface states in this system.

Dual-array valence emission spectrometer (DAVES): A new approach for hard x-ray photon-in photon-out spectroscopies

Energy Technology Data Exchange (ETDEWEB)

Finkelstein, K. D., E-mail: kdf1@cornell.edu; Lyndaker, A.; Krawcyk, T.; Conrad, J. [CHESS Wilson Lab, Cornell University, Ithaca, NY 14853 (United States); Pollock, C. J. [Dept. of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2016-07-27

CHESS has developed and successfully deployed a novel Dual Array Valence Emission Spectrometer (DAVES) for high energy resolution, hard x-ray spectroscopy. DAVES employs the simplest method for scanning multiple spherical crystals along a Rowland Circle. The new design achieves unique 2-color collection capability and is built to take special advantage of pixel array detectors. Our initial results show why these detectors greatly improve data quality. The presentation emphasizes flexibility of experimental design offered by DAVES. Prospects and benefits of 2-color spectroscopy are illustrated and discussed.

Valence band photoemission studies of clean metals

International Nuclear Information System (INIS)

Wehner, P.S.

1978-04-01

The application of Angle-Resolved Photoelectron Spectroscopy (ARPES) to crystalline solids and the utilization of such studies to illuminate several questions concerning the detailed electronic structure of such materials, are discussed. Specifically, by construction of a Direct Transition (DT) model and the utilization of energy-dependent angle-resolved normal photoemission in the photon energy range 32 eV < or = hν < or = 200 eV, the bulk band structure of copper is experimentally mapped out along three different directions in the Brillouin Zone; GAMMA to K, GAMMA to L, and GAMMA to X. In addition, various effects which influence the obtainable resolution in vector k-space, namely, thermal disorder, momentum broadening, and band mixing, are discussed and are shown to place severe limitations on the applicability of the DT model. Finally, a model for Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS) based on the symmetry of the initial-state wavefunctions is presented and compared to experimental results obtained from copper single crystals

Portable, x-band, linear accelerator systems

International Nuclear Information System (INIS)

Schonberg, R.G.; Deruyter, H.; Fowkes, W.R.; Johnson, W.A.; Miller, R.H.; Potter, J.M.; Weaver, J.N.

1985-01-01

Three light-weight, x-band, electron accelerators have been developed to provide a series of highly portable sources of x-rays and neutrons for nondestructive testing. The 1.5 MeV x-ray unit has a 200 kW magnetron for an RF source and an air-cooled, traveling wave accelerating structure to minimize its weight. The 4 and 6 MeV units share the same drive system which contains a 1.2 MW magnetron. The 4 MeV unit uses a traveling-wave guide to produce x-rays and the 6MeV unit uses a standing-wave guide to produce x-rays or neutrons. The choice of 9.3 GHz was dictated by the availability of a high power coaxial magnetron and by the obvious dimensional and weight advantages of a higher frequency over the more common S-band frequencies around 3 GHz

Portable, x-band, linear accelerator systems

International Nuclear Information System (INIS)

Schonberg, R.G.; Deruyter, H.; Fowkes, W.R.; Johnson, W.A.; Miller, R.H.; Potter, J.M.; Weaver, J.N.

1985-01-01

Three light-weight, x-band, electron accelerators have been developed to provide a series of highly portable sources of x-rays and neutrons for non-destructive testing. The 1.5 MeV x-ray unit has a 200 kW magnetron for an RF source and an air-cooled, traveling wave accelerating structure to minimize its weight. The 4 and 6 MeV units share the same drive system which contains a 1.2 MW magnetron. The 4 MeV unit uses a traveling-wave guide to produce x-rays and the 6MeV unit uses a standing-wave guide to produce x-rays or neutrons. The choice of 9.3 GHz was dictated by the availability of a high power coaxial magnetron and by the obvious dimensional and weight advantages of a higher frequency over the more common S-band frequencies around 3 GHz

Development of wave length-dispersive soft x-ray emission spectrometers for transmission electron microscopes - an introduction of valence electron spectroscopy for transmission electron microscopy

International Nuclear Information System (INIS)

Terauchi, Masami; Koike, Masato; Fukushima, Kurio; Kimura, Atsushi

2010-01-01

Two types of wavelength-dispersive soft X-ray spectrometers, a high-dispersion type and a conventional one, for transmission electron microscopes were constructed. Those spectrometers were used to study the electronic states of valence electrons (bonding electrons). Both spectrometers extended the acceptable energy regions to higher than 2000 eV. The best energy resolution of 0.08 eV was obtained for an Al L-emission spectrum by using the high-dispersion type spectrometer. By using the spectrometer, C K-emission of carbon allotropes, Cu L-emission of Cu 1-x Zn x alloys and Pt M-emission spectra were presented. The FWHM value of 12 eV was obtained for the Pt Mα-emission peak. The performance of the conventional one was also presented for ZnS and a section specimen of a multilayer device. W-M and Si-K emissions were clearly resolved. Soft X-ray emission spectroscopy based on transmission electron microscopy (TEM) has an advantage for obtaining spectra from a single crystalline specimen with a defined crystal setting. As an example of anisotropic soft X-ray emission, C K-emission spectra of single crystalline graphite with different crystal settings were presented. From the spectra, density of states of π- and σ-bondings were separately derived. These results demonstrated a method to analyse the electronic states of valence electrons of materials in the nanometre scale based on TEM. (author)

Valence electronic structure of Ni in Ni Si alloys from relative K X-ray intensity studies

Science.gov (United States)

Kalayci, Y.; Aydinuraz, A.; Tugluoglu, B.; Mutlu, R. H.

2007-02-01

The Kβ-to-Kα X-ray intensity ratio of Ni in Ni 3Si, Ni 2Si and NiSi has been determined by energy dispersive X-ray fluorescence technique. It is found that the intensity ratio of Ni decreases from pure Ni to Ni 2Si and then increases from Ni 2Si to NiSi, in good agreement with the electronic structure calculations cited in the literature. We have also performed band structure calculations for pure Ni in various atomic configurations by means of linear muffin-tin orbital method and used this data with the normalized theoretical intensity ratios cited in the literature to estimate the 3d-occupation numbers of Ni in Ni-Si alloys. It is emphasized that investigation of alloying effect in terms of X-ray intensity ratios should be carried out for the stoichiometric alloys in order to make reliable and quantitative comparisons between theory and experiment in transition metal alloys.

Actinide science with soft x-ray synchrotron radiation

International Nuclear Information System (INIS)

Shuh, D.

2002-01-01

Several workshops, some dating back more than fifteen years, recognised both the potential scientific impact and opportunities that would be made available by the capability to investigate actinide materials in the vacuum ultraviolet (VUV)/soft X-ray region of the synchrotron radiation (SR) spectrum. This spectral region revolutionized the approach to surface materials chemistry and physics nearly two decades ego. The actinide science community was unable to capitalize on these SR methodologies for the study of actinide materials until recently because of radiological safety concerns. ,The Advanced Light Source (ALS) at LBNL is a third-generation light source providing state-of-the-art performance in the VUV/soft X-ray region. Along with corresponding improvements in detector and vacuum technology, the ALS has rendered experiments with small amounts of actinide materials possible. In particular, it has been the emergence and development of micro-spectroscopic techniques that have enabled investigations of actinide materials at the ALS. The primary methods for the experimental investigation of actinide materials in the VUV/soft X-ray region are the complementary photoelectron spectroscopies, near-edge X-ray absorption fine structure (NEXAFS) and X-ray emission spectroscopy (XES) techniques. Resonant photo-emission is capable of resolving the 5f electron contributions to actinide bonding and can be used to characterise the electronic structure of actinide materials. This technique is clearly a most important methodology afforded by the tunable SR source. Core level and valence band photoelectron spectroscopies are valuable for the characterisation of the electronic properties of actinide materials, as well as for general analytical purposes. High-resolution core-level photo-emission and resonant photo-emission measurements from the a (monoclinic) and δ (FCC) allotropic phases of plutonium metal have been collected on beam line 7.0 at the ALS and the spectra show

X-ray detector for a panoramic X-ray unit

Energy Technology Data Exchange (ETDEWEB)

Cowell, D; Ensslin, F H

1976-01-15

The discovery deals with an X-ray detector suitable for the controlling of panoramic X-ray systems. It consists of a fluorescent image screen and a semiconductor photo cell. The output signal of the detector is proportional to the intensity of the X-radiation and the response time is large enough to follow the change of amplitude of the contours of the modulated X radiation. The detector with band-pass filter regulates, via a control system, the moving rate of the X-ray source and of the film opposite it in dependence of the intensity, so that a uniform exposure is ensured.

Lattice and Valence Electronic Structures of Crystalline Octahedral Molybdenum Halide Clusters-Based Compounds, Cs2[Mo6X14] (X = Cl, Br, I), Studied by Density Functional Theory Calculations.

Science.gov (United States)

Saito, Norio; Cordier, Stéphane; Lemoine, Pierric; Ohsawa, Takeo; Wada, Yoshiki; Grasset, Fabien; Cross, Jeffrey S; Ohashi, Naoki

2017-06-05

The electronic and crystal structures of Cs 2 [Mo 6 X 14 ] (X = Cl, Br, I) cluster-based compounds were investigated by density functional theory (DFT) simulations and experimental methods such as powder X-ray diffraction, ultraviolet-visible spectroscopy, and X-ray photoemission spectroscopy (XPS). The experimentally determined lattice parameters were in good agreement with theoretically optimized ones, indicating the usefulness of DFT calculations for the structural investigation of these clusters. The calculated band gaps of these compounds reproduced those experimentally determined by UV-vis reflectance within an error of a few tenths of an eV. Core-level XPS and effective charge analyses indicated bonding states of the halogens changed according to their sites. The XPS valence spectra were fairly well reproduced by simulations based on the projected electron density of states weighted with cross sections of Al K α , suggesting that DFT calculations can predict the electronic properties of metal-cluster-based crystals with good accuracy.

Atomic contributions to the valence band photoelectron spectra of metal-free, iron and manganese phthalocyanines

Energy Technology Data Exchange (ETDEWEB)

Bidermane, I., E-mail: ieva.bidermane@physics.uu.se [Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala (Sweden); Institut des Nanosciences de Paris, UPMC Univ. Paris 06, CNRS UMR 7588, F-75005 Paris (France); Brumboiu, I.E. [Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala (Sweden); Totani, R. [Department of Physical and Chemical Sciences, University of L’Aquila, Via Vetoio, Coppito, I-67010 L’Aquila (Italy); Grazioli, C. [CNR-IOM, Laboratorio TASC, ss. 14 km. 163.5, Basovizza, 34149 Trieste (Italy); Departement of Chemical and Pharmaceutical Sciences, University of Trieste (Italy); Shariati-Nilsson, M.N.; Herper, H.C.; Eriksson, O.; Sanyal, B. [Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala (Sweden); Ressel, B. [University of Nova Gorica, Vipavska Cesta 11c, 5270 Ajdovščina (Slovenia); Simone, M. de [CNR-IOM, Laboratorio TASC, ss. 14 km. 163.5, Basovizza, 34149 Trieste (Italy); Lozzi, L. [Department of Physical and Chemical Sciences, University of L’Aquila, Via Vetoio, Coppito, I-67010 L’Aquila (Italy); Brena, B.; Puglia, C. [Department of Physics and Astronomy, Uppsala University, Box-516, 75120 Uppsala (Sweden)

2015-11-15

Highlights: • In detail comparison between the valence band structure of H{sub 2}Pc, FePc and MnPc. • Comparison between the gas phase samples and thin evaporated films on Au (1 1 1). • Detailed analysis of the atomic orbital contributions to the valence band features. • DFT/HSE06 study of the valence band electronic structure of H{sub 2}Pc, FePc and MnPc. - Abstract: The present work reports a photoelectron spectroscopy study of the low-energy region of the valence band of metal-free phthalocyanine (H{sub 2}Pc) compared with those of iron phthalocyanine (FePc) and manganese phthalocyanine (MnPc). We have analysed in detail the atomic orbital composition of the valence band both experimentally, by making use of the variation in photoionization cross-sections with photon energy, and theoretically, by means of density functional theory. The atomic character of the Highest Occupied Molecular Orbital (HOMO), reflected on the outermost valence band binding energy region, is different for MnPc as compared to the other two molecules. The peaks related to the C 2p contributions, result in the HOMO for H{sub 2}Pc and FePc and in the HOMO-1 for MnPc as described by the theoretical predictions, in very good agreement with the experimental results. The DFT simulations, discerning the atomic contribution to the density of states, indicate how the central metal atom interacts with the C and N atoms of the molecule, giving rise to different partial and total density of states for these three Pc molecules.

X-Band RF Gun Development

International Nuclear Information System (INIS)

Vlieks, A.E.

2012-01-01

In support of the MEGa-ray program at LLNL and the High Gradient research program at SLAC, a new X-band multi-cell RF gun is being developed. This gun, similar to earlier guns developed at SLAC for Compton X-ray source program, will be a standing wave structure made of 5.5 cells operating in the pi mode with copper cathode. This gun was designed following criteria used to build SLAC X-band high gradient accelerating structures. It is anticipated that this gun will operate with surface electric fields on the cathode of 200 MeV/m with low breakdown rate. RF will be coupled into the structure through a final cell with symmetric duel feeds and with a shape optimized to minimize quadrupole field components. In addition, geometry changes to the original gun, operated with Compton X-ray source, will include a wider RF mode separation, reduced surface electric and magnetic fields.

Determination of the valence-band offset of CdS/CIS solar cell devices by target factor analysis

Energy Technology Data Exchange (ETDEWEB)

Niles, D.W.; Contreras, M.; Ramanathan, K.; Noufi, R. [National Renewable Energy Lab., Golden, CO (United States)

1996-05-01

X-ray photoemission spectroscopy (XPS) is used to determine and compare the valence-band offsets ({Delta}E{sub v}) for CdS grown by chemical bath deposition on single-crystal and thin-film CuInSe{sub 2} (CIS). The thin-film CIS device was suitable for photovoltaic energy production. By sputtering through the CdS/CIS interface and reducing the depth profile with target factor analysis, the magnitude of {Delta}E{sub v} was determined to be {Delta}E{sub v} = 1.06 {+-} 0.15 eV for both the single-crystal and thin-film interfaces. This determination of {Delta}E{sub v} is about 0.25 eV larger than many previously reported estimations CdS grown by physical vapor deposition on CIS and helps explain the record performance of CdS/CIS photovoltaic devices.

Electronic structure of Al- and Ga-doped ZnO films studied by hard X-ray photoelectron spectroscopy

Directory of Open Access Journals (Sweden)

M. Gabás

2014-01-01

Full Text Available Al- and Ga-doped sputtered ZnO films (AZO, GZO are semiconducting and metallic, respectively, despite the same electronic valence structure of the dopants. Using hard X-ray photoelectron spectroscopy we observe that both dopants induce a band in the electronic structure near the Fermi level, accompanied by a narrowing of the Zn 3d/O 2p gap in the valence band and, in the case of GZO, a substantial shift in the Zn 3d. Ga occupies substitutional sites, whereas Al dopants are in both substitutional and interstitial sites. The latter could induce O and Zn defects, which act as acceptors explaining the semiconducting character of AZO and the lack of variation in the optical gap. By contrast, mainly substitutional doping is consistent with the metallic-like behavior of GZO.

Features of the core-valence luminescence and electron energy band structure of A1-xCsxCaCl3 (A = K,Rb) crystals

International Nuclear Information System (INIS)

Chornodolskyy, Ya; Stryganyuk, G; Syrotyuk, S; Voloshinovskii, A; Rodnyi, P

2007-01-01

From luminescence spectroscopy of CsCaCl 3 , Rb 1-x Cs x CaCl 3 and K 1-x Cs x CaCl 3 crystals, we have found evidence for intrinsic and impurity core-valence luminescence due to the radiative recombination of valence electrons with the holes of intrinsic or impurity 5p Cs + core states. The structural similarity of core-valence luminescence spectra has been revealed for the A 1-x Cs x CaCl 3 (A = K,Rb) crystals investigated. The electron energy structure of the CsCaCl 3 crystal has been calculated using the pseudopotential approach taking into account the gradient corrections for the exchange-correlation energy. The calculated density of the electronic states of CsCaCl 3 has been compared with corresponding parameters obtained from the analysis of core-valence luminescence spectra

Valence-band splitting energies in wurtzite InP nanowires: Photoluminescence spectroscopy and ab initio calculations

Science.gov (United States)

Gadret, E. G.; Dias, G. O.; Dacal, L. C. O.; de Lima, M. M., Jr.; Ruffo, C. V. R. S.; Iikawa, F.; Brasil, M. J. S. P.; Chiaramonte, T.; Cotta, M. A.; Tizei, L. H. G.; Ugarte, D.; Cantarero, A.

2010-09-01

We investigated experimentally and theoretically the valence-band structure of wurtzite InP nanowires. The wurtzite phase, which usually is not stable for III-V phosphide compounds, has been observed in InP nanowires. We present results on the electronic properties of these nanowires using the photoluminescence excitation technique. Spectra from an ensemble of nanowires show three clear absorption edges separated by 44 meV and 143 meV, respectively. The band edges are attributed to excitonic absorptions involving three distinct valence-bands labeled: A, B, and C. Theoretical results based on “ab initio” calculation gives corresponding valence-band energy separations of 50 meV and 200 meV, respectively, which are in good agreement with the experimental results.

Structure of Se-rich As-Se glasses by high-resolution x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Golovchak, R.; Kovalskiy, A.; Miller, A. C.; Jain, H.; Shpotyuk, O.

2007-01-01

To establish the validity of various proposed structural models, we have investigated the structure of the binary As x Se 100-x chalcogenide glass family (x≤40) by high-resolution x-ray photoelectron spectroscopy. From the composition dependence of the valence band, the contributions to the density of states from the 4p lone pair electrons of Se and the 4p bonding states and 4s electrons of Se and As are identified in the top part of the band. The analysis of Se 3d and As 3d core-level spectra supports the so-called chain crossing model for the atomic structure of Se-rich As x Se 100-x bulk glasses. The results also indicate small deviations (∼3-8%) from this model, especially for glass compositions with short Se chains (25 40 Se 60 and of Se-Se-Se fragments in a glass with composition x=30 is established

X-ray photoemission spectroscopy (XPS) and extended x-ray absorption fine structure (EXAFS) studies of silicate based glasses

International Nuclear Information System (INIS)

Karim, D.; Lam, D.J.

1979-01-01

The application of the x-ray photoemission spectroscopy (XPS) technique to study the electronic structure and bonding of heavy metal oxides in alkali- and alkali-earth-silicate glasses had been demonstrated. The bonding characteristics of the iron oxide and uranium oxide in sodium silicate glasses were deduced from the changes in the oxygen 1s levels and the heavy metal core levels. It is reasonable to expect that the effect of leaching on the heavy metal ions can be monitored using the appropriate core levels of these ions. To study the effect of leaching on the glass forming network, the valence band structure of the bridging and nonbridging oxygens in sodium silicate glasses were investigated. The measurement of extended x-ray absorption fine-structure (EXAFS) is a relatively new analytical technique for obtaining short range (<5 A) structural information around atoms of a selected species in both solid and fluid systems. Experiments have recently begun to establish the feasibility of using EXAFS to study the bonding of actinides in silicate glasses. Because of the ability of EXAFS to yield specific structural data even in complex multicomponent systems, it could prove to be an invaluable tool in understanding glass structure

X-ray magnetic circular dichroism in (Ge,Mn) compounds: Experiments and modeling

International Nuclear Information System (INIS)

Tardif, Samuel; Titov, Andrey; Arras, Emmanuel; Slipukhina, Ivetta; Hlil, El-Kébir; Cherifi, Salia; Joly, Yves; Jamet, Matthieu; Barski, André; Cibert, Joël; Kulatov, Erkin; Uspenskii, Yurii A.; Pochet, Pascal

2014-01-01

X-ray absorption (XAS) and x-ray magnetic circular dichroism (XMCD) spectra at the L 2,3 edges of Mn in (Ge,Mn) compounds have been measured and are compared to the results of first principles calculation. Early ab initio studies show that the Density Functional Theory (DFT) can very well describe the valence band electronic properties but fails to reproduce a characteristic change of sign in the L 3 XMCD spectrum of Mn in Ge 3 Mn 5 , which is observed in experiments. In this work we demonstrate that this disagreement is partially related to an underestimation of the exchange splitting of Mn 2p core states within the local density approximation. It is shown that the change in sign experimentally observed is reproduced if the exchange splitting is accurately calculated within the Hartree–Fock approximation, while the final states can be still described by the DFT. This approach is further used to calculate the XMCD in different (Ge,Mn) compounds. It demonstrates that the agreement between experimental and theoretical spectra can be improved by combining state of the art calculations for the core and valence states respectively. - Highlights: • X-ray absorption and magnetic circular dichroism spectra are measured and compared to first principles calculations in (Ge,Mn) compounds. • Standard density functional theory fails in properly describing peculiar features observed in the experiment. • A new approach to calculate theoretical X-ray absorption and magnetic circular dichroism spectra is proposed. • Improved modeling of the core levels splitting using the Hartree–Fock approximation allows for a better matching with the experiment. • This new method could be generalized to any 3d metallic-like system

A mirror for lab-based quasi-monochromatic parallel x-rays.

Science.gov (United States)

Nguyen, Thanhhai; Lu, Xun; Lee, Chang Jun; Jung, Jin-Ho; Jin, Gye-Hwan; Kim, Sung Youb; Jeon, Insu

2014-09-01

A multilayered parabolic mirror with six W/Al bilayers was designed and fabricated to generate monochromatic parallel x-rays using a lab-based x-ray source. Using this mirror, curved bright bands were obtained in x-ray images as reflected x-rays. The parallelism of the reflected x-rays was investigated using the shape of the bands. The intensity and monochromatic characteristics of the reflected x-rays were evaluated through measurements of the x-ray spectra in the band. High intensity, nearly monochromatic, and parallel x-rays, which can be used for high resolution x-ray microscopes and local radiation therapy systems, were obtained.

Microscopic bosonization of band structures: x-ray processes beyond the Fermi edge

Science.gov (United States)

Snyman, Izak; Florens, Serge

2017-11-01

Bosonization provides a powerful analytical framework to deal with one-dimensional strongly interacting fermion systems, which makes it a cornerstone in quantum many-body theory. However, this success comes at the expense of using effective infrared parameters, and restricting the description to low energy states near the Fermi level. We propose a radical extension of the bosonization technique that overcomes both limitations, allowing computations with microscopic lattice Hamiltonians, from the Fermi level down to the bottom of the band. The formalism rests on the simple idea of representating the fermion kinetic term in the energy domain, after which it can be expressed in terms of free bosonic degrees of freedom. As a result, one- and two-body fermionic scattering processes generate anharmonic boson-boson interactions, even in the forward channel. We show that up to moderate interaction strengths, these non-linearities can be treated analytically at all energy scales, using the x-ray emission problem as a showcase. In the strong interaction regime, we employ a systematic variational solution of the bosonic theory, and obtain results that agree quantitatively with an exact diagonalization of the original one-particle fermionic model. This provides a proof of the fully microscopic character of bosonization, on all energy scales, for an arbitrary band structure. Besides recovering the known x-ray edge singularity at the emission threshold, we find strong signatures of correlations even at emission frequencies beyond the band bottom.

Attempt at interpreting some optical absorption bands in X-ray irradiated fluorine

International Nuclear Information System (INIS)

Allain, Yves

1959-01-01

According to the results of one of our experiments, the 575 mμ absorption band of fluorine irradiated with X-Rays seams due to F - ion vacancies. Our goal has been to find a color centers model in fluorine colored in various conditions. Reprint of a paper published in Comptes rendus des seances de l'Academie des Sciences, t. 248, p. 2318-2320, sitting of Aril 20, 1959 [fr

Band alignment of two-dimensional metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te

Directory of Open Access Journals (Sweden)

Huazheng Sun

2017-09-01

Full Text Available Monolayer metal monochalcogenides MXs (M=Ga,In; X=S,Se,Te form a new class of two-dimensional semiconductors with indirect band gaps, and their band alignment information is investigated via first principles calculations. The dependence of band gap, valence-band maximum, conduction band minimum, and charge transfer on the M or X element has been obtained and can be understood from the orbital analysis of the band edges. Potential applications of metal monochalcogenides to design van der Waals heterostructures and catalyse the photo-splitting reaction of water have been discussed.

Resonant inelastic scattering at intermediate X-ray energies

CERN Document Server

Hague, C F; Journel, L; Gallet, J J; Rogalev, A; Krill, G; Kappler, J P

2000-01-01

We describe resonant inelastic X-ray scattering (RIXS) experiments and magnetic circular dichroism (MCD) in X-ray fluorescence performed in the 3-5 keV range. The examples chosen are X-ray fluorescence MCD of FeRh and RIXS experiments performed at the L/sub 3/ edge of Ce. Fe Rh is antiferromagnetic at room temperature but has a transition to the ferromagnetic state above 400 K. The Rh MCD signal is compared with an augmented spherical wave calculation. The experiment confirms the predicted spin polarization of the Rh 4d valence states. The RIXS measurements on Ce compounds and intermetallics address the problem of mixed valency especially in systems where degeneracy with the Fermi level remains small. Examples are taken from the 2p to (4f5d) /sup +1/ followed by 3d to 2p RIXS for a highly ionic compound CeF /sub 3/ and for almost gamma -like CeCuSi. (38 refs).

X-ray electron density distribution of GaAs

International Nuclear Information System (INIS)

Pietsch, U.

1986-01-01

Using ten X-ray structure amplitudes of strong reflections and nine weak reflections both, the valence electron and the difference electron density distribution of GaAs, are calculated. The experimental data are corrected for anomalous dispersion using a bond charge model. The calculated plots are compared with up to now published band structure-based and semiempirically calculated density plots. Taking into account the experimental data of germanium, measured on the same absolute scale, the difference density between GaAs and Ge is calculated. This exhibits the charge transfer between both the f.c.c.-sublattices as well as both, the shift and the decrease of the bond charge, quite closely connected to the theoretical results published by Baur et al. (author)

Spectral and temporal properties of the X-ray pulsar SMC X-1 at hard X-rays

Science.gov (United States)

Kunz, M.; Gruber, D. E.; Kendziorra, E .; Kretschmar, P.; Maisack, M.; Mony, B.; Staubert, R.; Doebereiner, S.; Englhauser, J.; Pietsch, W.

1993-01-01

The binary X-ray pulsar SMC X- 1 has been observed at hard X-rays with the High Energy X-Ray Experiment (HEXE) on nine occasions between Nov. 1987 and March 1989. A thin thermal bremsstrahlung fit to the phase averaged spectrum yields a plasma temperature (14.4 +/- 1.3) keV and a luminosity above (1.1 +/- 0.1) x 10 exp 38 erg/s in the 20-80 keV band. Pulse period values have been established for three observations, confirming the remarkably stable spin-up trend of SMC X-1. In one of the three observations the pulse profile was seen to deviate from a dominant double pulsation, while at the same time the pulsed fraction was unusually large. For one observation we determined for the first time the pulsed fraction in narrow energy bands. It increases with photon energy from about 20 percent up to over 60 percent in the energy range from 20 to 80 keV.

Photoemission investigation of the ZnSe/CdTe heterojunction band discontinuity

International Nuclear Information System (INIS)

Nelson, A.J.

1995-01-01

Synchrotron radiation soft x-ray photoemission spectroscopy and reflection high-energy electron diffraction were used to investigate the structural and electronic properties at the ZnSe/CdTe(100) heterojunction interface. ZnSe overlayers were sequentially grown in steps on p-type CdTe(100) single crystals at 200 degree C. In situ photoemission measurements were acquired after each growth in order to observe changes in the valence band electronic structure as well as changes in the Cd 4d, Zn 3d, and Te 4d core lines. The results were used to correlate the interfacial chemistry with the electronic structure and to directly determine the ZnSe/CdTe heterojunction valence band discontinuity and the consequent heterojunction band diagram. Results of these measurements reveal that the valence band offset is ΔE v =0.20 eV. copyright 1995 American Institute of Physics

A Compact 5 MeV S-Band Electron Linac Based X-Ray Source for Industrial Radiography

CERN Document Server

Auditore, Lucrezia; De Pasquale, Domenico; Emanuele, Umberto; Italiano, Antonio; Trifirò, Antonio; Trimarchi, Marina

2005-01-01

A compact and reliable X-ray source, based on a 5 MeV, 1 kW, S-band electron linac, has been set up at the Dipartimento di Fisica, Universit\\'a di Messina. This source, coupled with a GOS scintillator screen and a CCD camera, represents an innovative transportable system for industrial radiography and X-ray tomography. Optimization of the parameters influencing the e-gamma conversion and the X-ray beam characteristics have been studied by means of the MCNP-4C2 code. The converter choice is the result of the study of the e-gamma conversion performances for different materials and materials thicknesses. Also the converter position with respect to the linac exit window was studied. The chosen converter consists in a Ta-Cu target inserted close to the linac window. The Cu layer acts as a filter both on the electrons from the source and on the low energy X-rays. The X-ray beam angular profile was studied by means of GafChromic films with and without collimation. In the final source project, a collimation system pr...

Growth and characterization of ZnO{sub 1−x}S{sub x} highly mismatched alloys over the entire composition

Energy Technology Data Exchange (ETDEWEB)

Jaquez, M.; Ting, M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States); Yu, K. M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Hettick, M.; Javey, A. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States); Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Sánchez-Royo, J. F. [ICMUV, Instituto de Ciencia de Materiales, Universitat de València, P.O. Box 22085, 46071 Valencia (Spain); Wełna, M. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Experimental Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wrocław (Poland); Dubon, O. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Walukiewicz, W., E-mail: w-walukiewicz@lbl.gov [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

2015-12-07

Alloys from ZnO and ZnS have been synthesized by radio-frequency magnetron sputtering over the entire alloying range. The ZnO{sub 1−x}S{sub x} films are crystalline for all compositions. The optical absorption edge of these alloys decreases rapidly with small amount of added sulfur (x ∼ 0.02) and continues to red shift to a minimum of 2.6 eV at x = 0.45. At higher sulfur concentrations (x > 0.45), the absorption edge shows a continuous blue shift. The strong reduction in the band gap for O-rich alloys is the result of the upward shift of the valence-band edge with x as observed by x-ray photoelectron spectroscopy. As a result, the room temperature bandgap of ZnO{sub 1−x}S{sub x} alloys can be tuned from 3.7 eV to 2.6 eV. The observed large bowing in the composition dependence of the energy bandgap arises from the anticrossing interactions between (1) the valence-band of ZnO and the localized sulfur level at 0.30 eV above the ZnO valence-band maximum for O-rich alloys and (2) the conduction-band of ZnS and the localized oxygen level at 0.20 eV below the ZnS conduction band minimum for the S-rich alloys. The ability to tune the bandgap and knowledge of the location of the valence and conduction-band can be advantageous in applications, such as heterojunction solar cells, where band alignment is crucial.

Band width and multiple-angle valence-state mapping of diamond

International Nuclear Information System (INIS)

Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J.

1997-01-01

The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid's many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of ±1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84 degrees cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space

Band width and multiple-angle valence-state mapping of diamond

Energy Technology Data Exchange (ETDEWEB)

Jimenez, I.; Terminello, L.J.; Sutherland, D.G.J. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

The band width may be considered the single most important parameter characterizing the electronic structure of a solid. The ratio of band width and Coulomb repulsion determines how correlated or delocalized an electron system is. Some of the most interesting solids straddle the boundary between localized and delocalized, e.g. the high-temperature superconductors. The bulk of the band calculations available today is based on local density functional (DF) theory. Even though the Kohn-Sham eigenvalues from that theory do not represent the outcome of a band-mapping experiment, they are remarkably similar to the bands mapped via photoemission. Strictly speaking, one should use an excited state calculation that takes the solid`s many-body screening response to the hole created in photoemission into account. Diamond is a useful prototype semiconductor because of its low atomic number and large band width, which has made it a long-time favorite for testing band theory. Yet, the two experimental values of the band width of diamond have error bars of {+-}1 eV and differ by 3.2 eV. To obtain an accurate valence band width for diamond, the authors use a band-mapping method that collects momentum distributions instead of the usual energy distributions. This method has undergone extensive experimental and theoretical tests in determining the band width of lithium fluoride. An efficient, imaging photoelectron spectrometer is coupled with a state-of-the-art undulator beam line at the Advanced Light Source to allow collection of a large number of data sets. Since it takes only a few seconds to take a picture of the photoelectrons emitted into a 84{degrees} cone, the authors can use photon energies as high as 350 eV where the cross section for photoemission from the valence band is already quite low, but the emitted photoelectrons behave free-electron-like. This make its much easier to locate the origin of the inter-band transitions in momentum space.

X-ray magnetic circular dichroism and hard X-ray photoelectron spectroscopy of tetragonal Mn72Ge28 epitaxial thin film

Science.gov (United States)

Kim, Jinhyeok; Mizuguchi, Masaki; Inami, Nobuhito; Ueno, Tetsuro; Ueda, Shigenori; Takanashi, Koki

2018-04-01

An epitaxially grown Mn72Ge28 film with a tetragonal crystal structure was fabricated. It was clarified that the film had a perpendicular magnetization and a high perpendicular magnetic anisotropy energy of 14.3 Merg/cm3. The electronic structure was investigated by X-ray magnetic circular dichroism and hard X-ray photoelectron spectroscopy. The obtained X-ray magnetic circular dichroism spectrum revealed that the Mn orbital magnetic moment governed the magnetocrystalline anisotropy of the Mn72Ge28 film. A doublet structure was observed for the Mn 2p3/2 peak of hard X-ray photoelectron spectrum, indicating the spin exchange interaction between the 2p core-hole and 3d valence electrons.

X-Ray and Near-Infrared Spectroscopy of Dim X-Ray Point Sources Constituting the Galactic Ridge X-Ray Emission

Directory of Open Access Journals (Sweden)

Kumiko Morihana

2014-12-01

Full Text Available We present the results of X-ray and Near-Infrared observations of the Galactic Ridge X-ray Emission (GRXE. We extracted 2,002 X-ray point sources in the Chandra Bulge Field (l =0°.113, b = 1°.424 down to ~10-14.8 ergscm-2s-1 in 2-8 keV band with the longest observation (900 ks of the GRXE. Based on X-ray brightness and hardness, we classied the X-ray point sources into three groups: A (hard, B (soft and broad spectrum, and C (soft and peaked spectrum. In order to know populations of the X-ray point sources, we carried out NIR imaging and spectroscopy observation. We identied 11% of X-ray point sources with NIR and extracted NIR spectra for some of them. Based on X-ray and NIR properties, we concluded that non-thermal sources in the group A are mostly active galactic nuclei and the thermal sources are mostly white dwarf binaries such as cataclysmic variables (CVs and Pre-CVs. We concluded that the group B and C sources are X-ray active stars in flare and quiescence, respectively.

JEM-X: The X-ray monitor aboard INTEGRAL

DEFF Research Database (Denmark)

Lund, Niels; Budtz-Jørgensen, Carl; Westergaard, Niels Jørgen Stenfeldt

2003-01-01

The JEM-X monitor provides X-ray spectra and imaging with arcminute angular resolution in the 3 to 35 keV band. The good angular resolution and the low energy response of JEM-X plays an important role in the identification of gamma ray sources and in the analysis and scientific interpretation...

Soft-x-ray fluorescence study of buried silicides in antiferromagnetically coupled Fe/Si multilayers

Energy Technology Data Exchange (ETDEWEB)

Carlisle, J.A.; Chaiken, A.; Michel, R.P. [Lawrence Berkeley National Lab., CA (United States)] [and others

1997-04-01

Multilayer films made by alternate deposition of two materials play an important role in electronic and optical devices such as quantum-well lasers and x-ray mirrors. In addition, novel phenomena like giant magnetoresistance and dimensional crossover in superconductors have emerged from studies of multilayers. While sophisticated x-ray techniques are widely used to study the morphology of multilayer films, progress in studying the electronic structure has been slower. The short mean-free path of low-energy electrons severely limits the usefulness of photoemission and related electron free path of low-energy electrons severely limit spectroscopies for multilayer studies. Soft x-ray fluorescence (SXF) is a bulk-sensitive photon-in, photon-out method to study valence band electronic states. Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS) measured with partial photon yield can give complementary bulk-sensitive information about unoccupied states. Both these methods are element-specific since the incident x-ray photons excite electrons from core levels. By combining NEXAFS and SXF measurements on buried layers in multilayers and comparing these spectra to data on appropriate reference compounds, it is possible to obtain a detailed picture of the electronic structure. Results are presented for a study of a Fe/Si multilayer system.

Soft-x-ray fluorescence study of buried silicides in antiferromagnetically coupled Fe/Si multilayers

International Nuclear Information System (INIS)

Carlisle, J.A.; Chaiken, A.; Michel, R.P.

1997-01-01

Multilayer films made by alternate deposition of two materials play an important role in electronic and optical devices such as quantum-well lasers and x-ray mirrors. In addition, novel phenomena like giant magnetoresistance and dimensional crossover in superconductors have emerged from studies of multilayers. While sophisticated x-ray techniques are widely used to study the morphology of multilayer films, progress in studying the electronic structure has been slower. The short mean-free path of low-energy electrons severely limits the usefulness of photoemission and related electron free path of low-energy electrons severely limit spectroscopies for multilayer studies. Soft x-ray fluorescence (SXF) is a bulk-sensitive photon-in, photon-out method to study valence band electronic states. Near-edge x-ray absorption fine-structure spectroscopy (NEXAFS) measured with partial photon yield can give complementary bulk-sensitive information about unoccupied states. Both these methods are element-specific since the incident x-ray photons excite electrons from core levels. By combining NEXAFS and SXF measurements on buried layers in multilayers and comparing these spectra to data on appropriate reference compounds, it is possible to obtain a detailed picture of the electronic structure. Results are presented for a study of a Fe/Si multilayer system

The study on cytogenetic analysis and dosimetry reconstruction for medical diagnostic X-ray workers using G-banding and fluorescence in situ hybridization

International Nuclear Information System (INIS)

Li Jin; Wang Qin; Tang Weisheng; Sun Yuanming; Wang Zhiquan

2003-01-01

Objective: To estimate the dose of medical diagnostic X-ray workers. Methods: The chromosome aberrations were analyzed by G-banding or FISH in medical diagnostic X-ray workers with different calendar years of entry. Results: The biological doses estimated by the two methods were in agreement with the doses evaluated by physical methods. Conclusion: G-banding and FISH are effective ways to analyse the chromosome translocations

Structural, electronic structure, and band alignment properties at epitaxial NiO/Al{sub 2}O{sub 3} heterojunction evaluated from synchrotron based X-ray techniques

Energy Technology Data Exchange (ETDEWEB)

Singh, S. D., E-mail: devsh@rrcat.gov.in; Das, Arijeet; Ajimsha, R. S.; Upadhyay, Anuj; Kamparath, Rajiv; Mukherjee, C.; Misra, P.; Rai, S. K.; Sinha, A. K.; Ganguli, Tapas [Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India); Nand, Mangla; Jha, S. N. [Bhabha Atomic Research Centre, Mumbai, Maharashtra 400085 (India); Shukla, D. K.; Phase, D. M. [UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452017 (India)

2016-04-28

The valence band offset value of 2.3 ± 0.2 eV at epitaxial NiO/Al{sub 2}O{sub 3} heterojunction is determined from photoelectron spectroscopy experiments. Pulsed laser deposited thin film of NiO on Al{sub 2}O{sub 3} substrate is epitaxially grown along [111] direction with two domain structures, which are in-plane rotated by 60° with respect to each other. Observation of Pendellosung oscillations around Bragg peak confirms high interfacial and crystalline quality of NiO layer deposited on Al{sub 2}O{sub 3} substrate. Surface related feature in Ni 2p{sub 3/2} core level spectra along with oxygen K-edge soft X-ray absorption spectroscopy results indicates that the initial growth of NiO on Al{sub 2}O{sub 3} substrate is in the form of islands, which merge to form NiO layer for the larger coverage. The value of conduction band offset is also evaluated from the measured values of band gaps of NiO and Al{sub 2}O{sub 3} layers. A type-I band alignment at NiO and Al{sub 2}O{sub 3} heterojunction is also obtained. The determined values of band offsets can be useful in heterojunction based light emitting devices.

Characterization of an Yb:LuVO{sub 4} single crystal using X-ray topography, high-resolution X-ray diffraction, and X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Paszkowicz, W., E-mail: paszk@ifpan.edu.pl [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw (Poland); Romanowski, P.; Bak-Misiuk, J. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw (Poland); Wierzchowski, W. [Institute of Electronic Materials Technology, Wolczynska 133, PL-01919 Warsaw (Poland); Wieteska, K. [Institute of Atomic Energy POLATOM, PL-05400 Otwock-Swierk (Poland); Graeff, W. [HASYLAB at DESY, Notkestr. 85, D-22603 Hamburg (Germany); Iwanowski, R.J. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw (Poland); Heinonen, M.H. [Laboratory of Materials Science, Department of Physics, University of Turku, Vesilinnantie 5, FI-20014, Turku (Finland); Ermakova, O. [Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, PL-02668 Warsaw (Poland); Dabkowska, H. [Department of Physics, McMaster University, Hamilton, Ontario, L8S 4M1 (Canada)

2011-10-15

Knowledge on the defect and electronic structure allows for improved modeling of material properties. A short literature review has shown that the information on defect structure of rare earth orthovanadate single crystals is limited. In this paper, defect and electronic structure of a needle-shaped Yb:LuVO{sub 4} single crystal grown by the slow cooling method have been studied by means of X-ray diffraction topography employing white synchrotron beam, high-resolution diffraction (HRD) and photoelectron spectroscopy (XPS) techniques. Topographic investigations show that the crystal is composed of two blocks disoriented by about 1.5{sup o} and separated by a narrow deformed region. Some contrasts observed within the crystal volume may be attributed to glide bands and sector boundaries. The contrasts appearing in the vicinity of the surface may be interpreted as due to the presence of small inclusions. The HRD study indicates, in particular, that among point defects, the vacancy type defects dominate and that the density of other defects is small in comparison. The XPS measurements enabled, despite highly insulating properties of the studied crystal, an analysis of its bulk electronic structure, including the main core-levels (O 1s, V 2p, Lu 4f) as well as the valence band range.

Influence of LaSiOx passivation interlayer on band alignment between PEALD-Al2O3 and 4H-SiC determined by X-ray photoelectron spectroscopy

Science.gov (United States)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Shen, Lingyan; Zhang, Dongliang; Gu, Ziyue; Qian, Ru; Cao, Duo; Yu, Yuehui

2018-01-01

The influence of lanthanum silicate (LaSiOx) passivation interlayer on the band alignment between plasma enhanced atomic layer deposition (PEALD)-Al2O3 films and 4H-SiC was investigated by high resolution X-ray photoelectron spectroscopy (XPS). An ultrathin in situ LaSiOx interfacial passivation layer (IPL) was introduced between the Al2O3 gate dielectric and the 4H-SiC substrate to enhance the interfacial characteristics. The valence band offset (VBO) and corresponding conduction band offset (CBO) for the Al2O3/4H-SiC interface without any passivation were extracted to be 2.16 eV and 1.49 eV, respectively. With a LaSiOx IPL, a VBO of 1.79 eV and a CBO of 1.86 eV could be obtained across the Al2O3/4H-SiC interface. The difference in the band alignments was dominated by the band bending or band shift in the 4H-SiC substrate as a result of different interfacial layers (ILs) formed at the interface. This understanding of the physical details of the band alignment could be a good foundation for Al2O3/LaSiOx/4H-SiC heterojunctions applied in the 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

X-ray electron charge density distribution in silicon

International Nuclear Information System (INIS)

Pietsch, U.

1986-01-01

During the last two years new highly accurate X-ray structure amplitudes for silicon have been published. Also the scattering phases of some 'forbidden' reflections have been determined using the X-ray three-beam case. This allows the construction of most precise valence and difference electron density plots and the comparison with those calculated on the basis of the Aldret-Hart X-ray pendelloesung data or theoretically. The density plots are discussed in details of both, the bond and the atomic site. The contributions of various Fourier components and the influence of different temperature factors on the difference density are studied. (author)

Determination of valence band parameters in ZnTe

Energy Technology Data Exchange (ETDEWEB)

Froehlich, D.; Noethe, A.; Reimann, K. (Duesseldorf Univ. (Germany, F.R.). Physikalisches Inst. - Lehrstuhl 2)

1984-10-01

The fine structure of the 2P exciton in ZnTe is studied by two-photon-absorption. The energy splitting into four states, caused by the envelope-hole coupling, allows the determination of the Luttinger parameters ..gamma../sub 2/ and ..gamma../sub 3/, which describe the complex valence band. ..gamma../sub 2/ = 0.8 and ..gamma../sub 3/ = 1.7 are obtained. These values are compared to results of other experiments mainly on 1S excitons.

Optical verification of the valence band structure of cadmium arsenide

NARCIS (Netherlands)

Gelten, M.J.; Es, van C.M.; Blom, F.A.P.; Jongeneelen, J.W.F.

1980-01-01

Optical absorption measurements were performed on thin single crystalline samples of Cd3As2 at temperatures of 300 K and 10 K. At low temperature the interband absorption coefficient shows clearly two steps due to direct transitions from the heavy hole and light hole valence bands to the conduction

Accounting for many-body correlation effects in the calculation of the valence band photoelectron emission spectra of ferromagnets

International Nuclear Information System (INIS)

Minar, J.; Chadov, S.; Ebert, H.; Chioncel, L.; Lichtenstein, A.; De Nadai, C.; Brookes, N.B.

2005-01-01

The influence of dynamical correlation effects on the valence band photoelectron emission of ferromagnetic Fe, Co and Ni has been investigated. Angle-resolved as well as angle-integrated valence band photoelectron emission spectra were calculated on the basis of the one-particle Green's function, which was obtained by using the fully relativistic Korringa-Kohn-Rostoker method. The correlation effects have been included in terms of the electronic self-energy which was calculated self-consistently within Dynamical Mean-Field Theory (DMFT). In addition a theoretical approach to calculate high-energy angle-resolved valence band photoelectron emission spectra is presented

X-ray data booklet. Revision

Energy Technology Data Exchange (ETDEWEB)

Vaughan, D. (ed.)

1986-04-01

A compilation of data is presented. Included are properties of the elements, electron binding energies, characteristic x-ray energies, fluorescence yields for K and L shells, Auger energies, energy levels for hydrogen-, helium-, and neonlike ions, scattering factors and mass absorption coefficients, and transmission bands of selected filters. Also included are selected reprints on scattering processes, x-ray sources, optics, x-ray detectors, and synchrotron radiation facilities. (WRF)

Auger electron emission initiated by the creation of valence-band holes in graphene by positron annihilation.

Science.gov (United States)

Chirayath, V A; Callewaert, V; Fairchild, A J; Chrysler, M D; Gladen, R W; Mcdonald, A D; Imam, S K; Shastry, K; Koymen, A R; Saniz, R; Barbiellini, B; Rajeshwar, K; Partoens, B; Weiss, A H

2017-07-13

Auger processes involving the filling of holes in the valence band are thought to make important contributions to the low-energy photoelectron and secondary electron spectrum from many solids. However, measurements of the energy spectrum and the efficiency with which electrons are emitted in this process remain elusive due to a large unrelated background resulting from primary beam-induced secondary electrons. Here, we report the direct measurement of the energy spectra of electrons emitted from single layer graphene as a result of the decay of deep holes in the valence band. These measurements were made possible by eliminating competing backgrounds by employing low-energy positrons (holes by annihilation. Our experimental results, supported by theoretical calculations, indicate that between 80 and 100% of the deep valence-band holes in graphene are filled via an Auger transition.

Photoelectron spectroscopy study of the X-ray-induced decomposition of some gold(III) dithiocarbamates

International Nuclear Information System (INIS)

Attekum, P.M.Th.M. van; Trooster, J.M.

1980-01-01

The factors influencing the decomposition rate of two gold(III) complexes, [AuMe 2 (S 2 CNMe 2 )] and [AuBr 2 (S 2 CNPr 2 sup(n))]; in an X-ray photoelectron spectroscopy experiment have been studied. It is shown that the decomposition rate can be slowed down by using graphite as substrate and by lowering the sample temperature. From the Au(4f) spectrum a direct measure has been made of the shift in the binding energy between Ausup(III) and Ausup(I) and this shift is shown to be dependent on the electronegativity of the ligands. The valence bands of the complexes show a narrow Au(5d) band with a spin-orbit splitting of ca. 1.6 eV. (author)

Characterization of the Electronic Structure of Silicon Nanoparticles Using X-ray Absorption and Emission

Energy Technology Data Exchange (ETDEWEB)

Vaverka, April Susan Montoya [Univ.of California, Davis, CA (United States)

2008-01-01

Resolving open questions regarding transport in nanostructures can have a huge impact on a broad range of future technologies such as light harvesting for energy. Silicon has potential to be used in many of these applications. Understanding how the band edges of nanostructures move as a function of size, surface termination and assembly is of fundamental importance in understanding the transport properties of these materials. In this thesis work I have investigated the change in the electronic structure of silicon nanoparticle assemblies as the surface termination is changed. Nanoparticles are synthesized using a thermal evaporation technique and sizes are determined using atomic force microscopy (AFM). By passivating the particles with molecules containing alcohol groups we are able to modify the size dependent band edge shifts. Both the valence and conduction bands are measured using synchrotron based x-ray absorption spectroscopy (XAS) and soft x-ray fluorescence (SXF) techniques. Particles synthesized via recrystallization of amorphous silicon/SiO₂ multilayers of thicknesses below 10 nm are also investigated using the synchrotron techniques. These samples also show quantum confinement effects but the electronic structure is different from those synthesized via evaporation methods. The total bandgap is determined for all samples measured. The origins of these differences in the electronic structures are discussed.

Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Lee, Kyeongmi; Kamiya, Toshio; Nomura, Kenji; Yanagi, Hiroshi; Ikenaga, Eiji; Sugiyama, Takeharu; Kobayashi, Keisuke; Hosono, Hideo

2012-01-01

Although amorphous InGaZnO 4 has intensively been studied for a semiconductor channel material of thin-film transistors in next-generation flat-panel displays, its electronic structure parameters have not been reported. In this work, the electron affinities (χ) and the ionization potentials (I p ) of crystalline and amorphous InGaZnO 4 (c-IGZO and a-IGZO) were measured using bulk-sensitive hard x-ray photoelectron spectroscopy. First, the χ and I p values of c-IGZO and a-IGZO thin films were estimated by aligning the Zn 2p 3/2 core level energies to a literature value for ZnO, which provided χ = 3.90 eV and I p = 7.58 eV for c-IGZO and 4.31 eV and 7.41 eV for a-IGZO. It was also confirmed that the escape depth of the photoelectrons excited by the photon energy of 5950.2 eV is 3.3 nm for a-IGZO and large enough for directly measuring the interface electronic structure using a-IGZO/c-Si heterojunctions. It provided the valence band offset of ∼2.3 eV, which agrees well with the above data. The present results substantiate that the a-IGZO/c-Si interface follows well the Schottky-Mott rule.

The Cryogenic AntiCoincidence detector for ATHENA X-IFU: a scientific assessment of the observational capabilities in the hard X-ray band

Science.gov (United States)

D'Andrea, M.; Lotti, S.; Macculi, C.; Piro, L.; Argan, A.; Gatti, F.

2017-12-01

ATHENA is a large X-ray observatory, planned to be launched by ESA in 2028 towards an L2 orbit. One of the two instruments of the payload is the X-IFU: a cryogenic spectrometer based on a large array of TES microcalorimeters, able to perform integral field spectrography in the 0.2-12 keV band (2.5 eV FWHM at 6 keV). The X-IFU sensitivity is highly degraded by the particle background expected in the L2 orbit, which is induced by primary protons of both galactic and solar origin, and mostly by secondary electrons. To reduce the particle background level and enable the mission science goals, the instrument incorporates a Cryogenic AntiCoincidence detector (CryoAC). It is a 4 pixel TES based detector, placed 10 keV). The aim of the study has been to understand if the present detector design can be improved in order to enlarge the X-IFU scientific capability on an energy band wider than the TES array. This is beyond the CryoAC baseline, being this instrument aimed to operate as anticoincidence particle detector and not conceived to perform X-ray observations.

X-rays and magnetism

International Nuclear Information System (INIS)

Fischer, Peter; Ohldag, Hendrik

2015-01-01

Magnetism is among the most active and attractive areas in modern solid state physics because of intriguing phenomena interesting to fundamental research and a manifold of technological applications. State-of-the-art synthesis of advanced magnetic materials, e.g. in hybrid structures paves the way to new functionalities. To characterize modern magnetic materials and the associated magnetic phenomena, polarized x-rays have emerged as unique probes due to their specific interaction with magnetic materials. A large variety of spectroscopic and microscopic techniques have been developed to quantify in an element, valence and site-sensitive way properties of ferro-, ferri-, and antiferromagnetic systems, such as spin and orbital moments, and to image nanoscale spin textures and their dynamics with sub-ns time and almost 10 nm spatial resolution. The enormous intensity of x-rays and their degree of coherence at next generation x-ray facilities will open the fsec time window to magnetic studies addressing fundamental time scales in magnetism with nanometer spatial resolution. This review will give an introduction into contemporary topics of nanoscale magnetic materials and provide an overview of analytical spectroscopy and microscopy tools based on x-ray dichroism effects. Selected examples of current research will demonstrate the potential and future directions of these techniques. (report on progress)

Electronic structure of YbNiX{sub 3} (X =Si, Ge) studied by hard X-ray photoemission spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Sato, Hitoshi; Shimada, Kenya; Namatame, Hirofumi [Hiroshima Synchrotron Radiation Center, Hiroshima University, Kagamiyama 2-313, Higashi-Hiroshima 739-0046 (Japan); Utsumi, Yuki [Max-Planck Institute for Chemical Physics of Solids, 01187 Dresden (Germany); Kodama, Junichi; Nagata, Heisuke [Graduate School of Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8526 (Japan); Avila, Marcos A.; Ribeiro, Raquel A. [Centro de Ciencias Naturais e Humanas, Universidade Federal do ABC, Santo Andre - SP, 09210-580 (Brazil); Umeo, Kazunori [Cryogenics and Instrumental Analysis Division, N-BARD, Hiroshima University, Higashi-Hiroshima 739-8526 (Japan); Takabatake, Toshiro [Department of Quantum Matter, AdSM, Hiroshima University, Higashi-Hiroshima 739-8530 (Japan); Institute for Advanced Materials Research, Hiroshima University, Higashi-Hiroshima 739-8530 (Japan); Mimura, Kojiro; Motonami, Satoru; Anzai, Hiroaki [Graduate School of Engineering, Osaka Prefecture University, Sakai 599-8531 (Japan); Ueda, Shigenori [Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, Hyogo 679-5148 (Japan); Taniguchi, Masaki [Hiroshima Synchrotron Radiation Center, Hiroshima University, Kagamiyama 2-313, Higashi-Hiroshima 739-0046 (Japan); Graduate School of Science, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8526 (Japan)

2015-06-15

lectronic structure of the Kondo lattices YbNiX{sub 3} (X =Si, Ge) has been investigated by means of hard x-ray photoemission spectroscopy (HAXPES) with hν = 5.95 keV. From the Yb 3d HAXPES spectra, the Yb valence in YbNiSi{sub 3} is estimated to be ∝ 2.92, which is almost temperature-independent. On the other hand, the valence in YbNiGe{sub 3} is estimated to be 2.48 at 300 K, showing significant valence fluctuation, and gradually decreases to 2.41 at 20 K on cooling. The Ni 2p{sub 3/2} and Yb{sup 3+} 4f peaks exhibit opposite energy shifts amounting to ∝ 0.6 eV between YbNiSi{sub 3} and YbNiGe{sub 3}. We propose a simple model for the electronic structure of YbNiX{sub 3} based on the HAXPES results. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Determination of band-structure parameters of Pbsub(1-x)Snsub(x)Te narrow-gap semiconductor from infrared Faraday rotation

International Nuclear Information System (INIS)

Sizov, F.F.; Lashkarev, G.V.; Martynchuk, E.K.

1977-01-01

The temeprature dependences of Faraday rotation in Pbsub(1-x)Snsub(x)Te of p type with the hole density 3x10 16 -2.2x10 18 cm -3 are studied in the range 40-370 K and in the spectral interval 4-16 μm. The analysis of interband Faraday rotation confirms a conclusion made by the authors earlier that the g factor for the c band (gsub(c)) is positive, for the v band (gsub(v))-negative and that [gsub(c)] > [gsub(v)]. The temperature dependences of carrier effective masses are investigated on the basis of the two-band model. It is demonstrated that for T < 200 K the Faraday effective mass of holes near the ceiling of the valency band varies in direct proportion to the width of the forbidden band. The temperature increase of the Faraday effective mass of current carriers, which is faster than that of the effective electron mass, is discovered, and this is related to the effect of the heavy hole band

Hybridization and bond-orbital components in site-specific X-ray photoelectron spectra of rutile TiO2

International Nuclear Information System (INIS)

Woicik, J.C.; Nelson, E.J.; Kronik, Leeor; Jain, Manish; Chelikowsky, James R.; Heskett, D.; Berman, L.E.; Herman, G.S.

2002-01-01

We have determined the Ti and O components of the rutile TiO 2 valence band using the method of site-specific x-ray photoelectron spectroscopy. Comparisons with calculations based on pseudopotentials within the local density approximation reveal the hybridization of the Ti 3d, 4s, and 4p states, and the O 2s and 2p states on each site. These chemical effects are observed due to the large differences between the angular-momentum dependent matrix elements of the photoelectron process

Advances in X-Band and S-Band Linear Accelerators for Security, NDT, and Other Applications

CERN Document Server

Mishin, Andrey V

2005-01-01

At AS&E High Energy Systems Division, we designed several new advanced high energy electron beam and X-ray sources. Our primary focus has always been in building the world's most portable commercial X-band accelerators. Today, our X-band systems frequently exceed performance of the similar S-band machines, while they are more portable compared to the latter. The new designs of the X-band accelerators in the most practical energy range from 1 MeV to 6 MeV have been tested delivering outstanding results. Seventy 6 MeV X-band linacs systems have been produced. The most compact linac for security is used by AS&E in a self-shielded, Shaped Energy™ cargo screening system. We pioneered using the X-band linear accelerators for CT, producing high quality images of oil pipes and wood logs. An X-band linear accelerator head on a robotic arm has been used for electron beam radiation curing of an odd-shaped graphite composite part. We developed the broad-range 4 MeV to over 10 MeV energy-regulated X-band ...

Polarization Dependent Bulk-sensitive Valence Band Photoemission Spectroscopy and Density Functional Theory Calculations: Part I. 3d Transition Metals

Science.gov (United States)

Ueda, Shigenori; Hamada, Ikutaro

2017-12-01

The X-ray polarization dependent valence band HAXPES spectra of 3d transition metals (TMs) of Ti-Zn were measured to investigate the orbital resolved electronic structures by utilizing that the fact the photoionization cross-section of the atomic orbitals strongly depends on the experimental geometry. We have calculated the HAXPES spectra, which correspond to the cross-section weighted densities of states (CSW-DOSs), where the DOSs were obtained by the density functional theory calculations, and we have determined the relative photoionization cross-sections of the 4s and 4p orbitals to the 3d orbital in the 3d TMs. The experimentally obtained bulk-sensitive 3d and 4s DOSs were good agreement with the calculated DOSs in Ti, V, Cr, and Cu. In contrast, the deviations between the experimental and calculated 3d DOSs for Mn, Fe, Co, Ni were found, suggesting that the electron correlation plays an important role in the electronic structures for these materials.

M-edge x-ray absorption spectroscopy: A new tool for dilute mixed-valent materials

International Nuclear Information System (INIS)

Kaindl, G.; Brewer, W.D.; Kalkowski, G.; Holtzberg, F.

1983-01-01

The valence of Tm compounds is derived from M/sub V/ x-ray absorption spectra recorded by total electron yield under ultra-high-vacuum conditions. For mixed-valent systems the spectra are superpositions of Tm 3+ (three lines) and Tm 2+ (one line) components, providing accurate mean valence values even in highly dilute systems, such as Tm/sub x/Y/sub 1-x/Se, which agree well with those from lattice constant systematics. A surface valence change on TmS(100) is identified as an initial-state effect

X-ray absorption and resonant photoelectron spectroscopy of epitaxial Fe-doped SrTiO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Koehl, Annemarie; Lenser, Christian; Xu, Chencheng; Wicklein, Sebastian; Dittmann, Regina [Peter Gruenberg Institut 7, Forschungszentrum Juelich GmbH (Germany); Kajewski, Dariusz; Kubacki, Jurek; Szade, Jacek [A.Chelkowski Institute of Physics, University of Silesia, Katowic (Poland)

2012-07-01

In recent years resistive switching in transition metal oxides received a lot of research interest due to the proposed application as non-volatile data memory. SrTiO{sub 3} serves as a model system for the investigation of resistive switching due to the valency change mechanism. Frequently, slightly Fe doping is used, as it has shown to improve the switching properties. The focus of this study is the effect of Fe-doping of SrTiO{sub 3} in thin epitaxial films. Thin film samples with Fe concentration of 2 at.% and 5 at.% were prepared by pulsed laser deposition at varying substrate temperatures. The surface morphology of the films is studied with AFM. X-ray absorption spectroscopy is performed in total-electron and auger-electron yield offering different probing depths. Significant variations of the Fe-L edge between bulk and interface as well as after annealing are observed and discussed in terms of integration into the lattice and evolution of secondary phases. Resonant photoelectron spectroscopy at the absorption edge of Ti, O and Fe was used to determine the spectral contributions to the valence band. Most noteworthy we find significant spectral weight above the valence band, which can be attributed to Fe-states.

Spin-dependent electron-phonon coupling in the valence band of single-layer WS₂

DEFF Research Database (Denmark)

Hinsche, Nicki Frank; Ngankeu, Arlette S.; Guilloy, Kevin

2017-01-01

The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single-layer transition-metal dichalchogenides such as MoS2 or WS2. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin....... Here, the electron-phonon coupling in the valence band maximum of single-layer WS2 is studied by first-principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of λK=0.0021 and 0.......40 for the upper and lower spin-split valence band of the freestanding layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment but it remains significant, in good agreement with the experimental results....

Giant Cu 2p Resonances in CuO Valence-Band Photoemission

NARCIS (Netherlands)

Tjeng, L.H.; Chen, C.T.; Ghijsen, J.; Rudolf, P.; Sette, F.

1991-01-01

We report the observation of a giant resonance in the Cu 2p resonant-photoemission spectra of CuO. The study allows the unambiguous identification of the local Cu 3d8 configuration in the valence-band photoemission spectrum, providing conclusive evidence for the charge-transfer nature of the

Interfacial chemical bonding state and band alignment of CaF2/hydrogen-terminated diamond heterojunction

International Nuclear Information System (INIS)

Liu, J. W.; Liao, M. Y.; Cheng, S. H.; Imura, M.; Koide, Y.

2013-01-01

CaF 2 films are deposited on hydrogen-terminated diamond (H-diamond) by a radio-frequency sputter-deposition technique at room temperature. Interfacial chemical bonding state and band alignment of CaF 2 /H-diamond heterojunction are investigated by X-ray photoelectron spectroscopy. It is confirmed that there are only C-Ca bonds at the CaF 2 /H-diamond heterointerface. Valence and conductance band offsets of the CaF 2 /H-diamond heterojunciton are determined to be 3.7 ± 0.2 and 0.3 ± 0.2 eV, respectively. It shows a type I straddling band configuration. The large valence band offset suggests advantage of the CaF 2 /H-diamond heterojunciton for the development of high power and high frequency field effect transistors.

Band alignment at the Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4}/CdS interface

Energy Technology Data Exchange (ETDEWEB)

Haight, Richard; Barkhouse, Aaron; Gunawan, Oki; Shin, Byungha; Copel, Matt; Hopstaken, Marinus; Mitzi, David B [IBM TJ Watson Research Center, P.O. Box 218, Yorktown Hts., New York 10598 (United States)

2011-06-20

Energy band alignments between CdS and Cu{sub 2}ZnSn(S{sub x}Se{sub 1-x}){sub 4} (CZTSSe) grown via solution-based and vacuum-based deposition routes were studied as a function of the [S]/[S+Se] ratio with femtosecond laser ultraviolet photoelectron spectroscopy, photoluminescence, medium energy ion scattering, and secondary ion mass spectrometry. Band bending in the underlying CZTSSe layer was measured via pump/probe photovoltage shifts of the photoelectron spectra and offsets were determined with photoemission under flat band conditions. Increasing the S content of the CZTSSe films produces a valence edge shift to higher binding energy and increases the CZTSSe band gap. In all cases, the CdS conduction band offsets were spikes.

Development of hard X-ray photoelectron SPLEED-based spectrometer applicable for probing of buried magnetic layer valence states

Energy Technology Data Exchange (ETDEWEB)

Kozina, Xeniya, E-mail: kozina@uni-mainz.de [Japan Synchrotron Radiation Research Institute, SPring-8, Hyogo 679-5198 (Japan); Ikenaga, Eiji [Japan Synchrotron Radiation Research Institute, SPring-8, Hyogo 679-5198 (Japan); Viol Barbosa, Carlos Eduardo; Ouardi, Siham; Karel, Julie [Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden (Germany); Yamamoto, Masafumi [Division of Electronics for Informatics, Hokkaido University, Sapporo 060-0814 (Japan); Kobayashi, Keisuke [Japan Atomic Energy Agency, SPring-8, Hyogo 679-5148 (Japan); Elmers, Hans Joachim; Schönhense, Gerd [Institut für Physik, Johannes Gutenberg – Universität, 55099 Mainz (Germany); Felser, Claudia [Max-Planck-Institut für Chemische Physik fester Stoffe, 01187 Dresden (Germany)

2016-08-15

Highlights: • A high-voltage compatible spin-HAXPES detector based on SPLEED from W(001) has been developed. • Magnetic properties of a TMR device were studied by core-level photoemission on the Fe 2p{sub 3/2} states. • The developed instrument enabled probing of buried layers in the region of the valence states. - Abstract: A novel design of high-voltage compatible polarimeter for spin-resolved hard X-ray photoelectron spectroscopy (Spin-HAXPES) went into operation at beamline BL09XU of SPring-8 in Hyogo, Japan. The detector is based on the well-established principle of electron diffraction from a W(001) single-crystal at a scattering energy of 103.5 eV. It's special feature is that it can be operated at a high negative bias potential up to 10 kV, necessary to access the HAXPES range. The polarimeter is operated behind a large hemispherical analyzer (Scienta R-4000). It was optimized for high transmission of the transfer optics. A delay-line detector (20 mm dia.) is positioned at the exit plane of the analyzer enabling conventional multichannel intensity spectroscopy simultaneously with single-channel spin analysis. The performance of the combined setup is demonstrated by the spin-resolved data for the valence-region of a FeCo functional layer of a tunneling device, buried beneath 3 nm of oxidic material. The well-structured spin polarization spectrum validates Spin-HAXPES in the valence energy range as powerful method for bulk electronic structure analysis. The spin polarization spectrum exhibits a rich structure, originating from clearly discernible transitions in the majority and minority partial spin spectra.

AlxGa1--xN/GaN band offsets determined by deep-level emission

International Nuclear Information System (INIS)

Hang, D. R.; Chen, C. H.; Chen, Y. F.; Jiang, H. X.; Lin, J. Y.

2001-01-01

We present studies of the compositional dependence of the optical properties of Al x Ga 1-x N(0 x Ga 1-x N. As aluminum concentration increases, the color of the band changes from yellow (2.2 eV) to blue (2.6 eV). The shift was less than that of the band gap. Together with previously published studies, it implies that the deep acceptor level is pinned to a common reference level to both materials, thus the deep level responsible for the yellow emission is used as a common reference level to determine the band alignment in Al x Ga 1-x N/GaN heterojunctions. Combining with the near-band-edge modulation spectra, the estimated ratio of conduction-to-valence band discontinuity is 65:35. Our results are close to the values obtained from PL measurements on Al 0.14 Ga 0.86 N/GaN quantum wells and those calculated by linear muffin-tin orbital method and linearized augmented plane wave method. copyright 2001 American Institute of Physics

RESONANT MAGNETIC-X-RAY SCATTERING FROM MIXED-VALENCE TMSE

NARCIS (Netherlands)

MCWHAN, DB; ISAACS, ED; CARRA, P; SHAPIRO, SM; THOLE, BT; HOSHINO, S

1993-01-01

The mixed-valent compound TmSe has been studied in its antiferromagnetic state (T x-ray scattering. The (003) magnetic reflection shows two peaks as a function of incident energy corresponding to the L(III) absorption edges of its Tm2+ and Tm2+ configurations. This

Super-Eddington accretion on to the neutron star NGC 7793 P13: Broad-band X-ray spectroscopy and ultraluminous X-ray sources

Science.gov (United States)

Walton, D. J.; Fürst, F.; Harrison, F. A.; Stern, D.; Bachetti, M.; Barret, D.; Brightman, M.; Fabian, A. C.; Middleton, M. J.; Ptak, A.; Tao, L.

2018-02-01

We present a detailed, broad-band X-ray spectral analysis of the ultraluminous X-ray source (ULX) pulsar NGC 7793 P13, a known super-Eddington source, utilizing data from the XMM-Newton, NuSTAR and Chandra observatories. The broad-band XMM-Newton+NuSTAR spectrum of P13 is qualitatively similar to the rest of the ULX sample with broad-band coverage, suggesting that additional ULXs in the known population may host neutron star accretors. Through time-averaged, phase-resolved and multi-epoch studies, we find that two non-pulsed thermal blackbody components with temperatures ∼0.5 and 1.5 keV are required to fit the data below 10 keV, in addition to a third continuum component which extends to higher energies and is associated with the pulsed emission from the accretion column. The characteristic radii of the thermal components appear to be comparable, and are too large to be associated with the neutron star itself, so the need for two components likely indicates the accretion flow outside the magnetosphere is complex. We suggest a scenario in which the thick inner disc expected for super-Eddington accretion begins to form, but is terminated by the neutron star's magnetic field soon after its onset, implying a limit of B ≲ 6 × 1012 G for the dipolar component of the central neutron star's magnetic field. Evidence of similar termination of the disc in other sources may offer a further means of identifying additional neutron star ULXs. Finally, we examine the spectrum exhibited by P13 during one of its unusual 'off' states. These data require both a hard power-law component, suggesting residual accretion on to the neutron star, and emission from a thermal plasma, which we argue is likely associated with the P13 system.

Optical and X-ray studies of Compact X-ray Binaries in NGC 5904

Science.gov (United States)

Bhalotia, Vanshree; Beck-Winchatz, Bernhard

2018-06-01

Due to their high stellar densities, globular cluster systems trigger various dynamical interactions, such as the formation of compact X-ray binaries. Stellar collisional frequencies have been correlated to the number of X-ray sources detected in various clusters and we hope to measure this correlation for NGC 5904. Optical fluxes of sources from archival HST images of NGC 5904 have been measured using a DOLPHOT PSF photometry in the UV, optical and near-infrared. We developed a data analysis pipeline to process the fluxes of tens of thousands of objects using awk, python and DOLPHOT. We plot color magnitude diagrams in different photometric bands in order to identify outliers that could be X-ray binaries, since they do not evolve the same way as singular stars. Aligning previously measured astrometric data for X-ray sources in NGC 5904 from Chandra with archival astrometric data from HST will filter out the outlier objects that are not X-ray producing, and provide a sample of compact binary systems that are responsible for X-ray emission in NGC 5904. Furthermore, previously measured X-ray fluxes of NGC 5904 from Chandra have also been used to measure the X-ray to optical flux ratio and identify the types of compact X-ray binaries responsible for the X-ray emissions in NGC 5904. We gratefully acknowledge the support from the Illinois Space Grant Consortium.

Spin-resolved x-ray photoemission studies of ferromagnetic metals

International Nuclear Information System (INIS)

Klebanoff, L.E.

1996-01-01

Recent spin-resolved x-ray photoelectron spectroscopy (SRXPS) studies of ferromagnetic metals are reviewed. SRXPS studies of metallic Fe, Co, Co 66 Fe 4 Ni 1 B 14 Si 15 , and Ni demonstrate that core-level photoemission, and the itinerant electron response to core-hole creation, are highly spin-dependent. The exchange splitting of the Fe 2p 3/2 level is found to be 0.48±0.05 eV. Lifetime broadening results for the Fe 2p 3/2 N↑ (majority spin) and N↓ (minority spin) components indicate conservation of spin in core-hole filling processes involving the valence band. SRXPS study of the Fe 2p 3/2 peak asymmetry α reveals a dependence of electron endash hole excitation on the spin of the core hole. Spin analysis of the Fe 3s XPS line shape shows it to be a three-component spectrum, rather than the two-component line shape assumed previously. A photon energy dependence of one of the Fe 3s components explains disagreement among previous Fe 3s XPS results. Comparisons of SRXPS from Co metal and Co 66 Fe 4 Ni 1 B 14 Si 15 directly demonstrate the effect of a reduced atomic magnetic moment on the spin dependence of core-level XPS. The behavior of lifetime broadenings for the N↑ and N↓ Co 2p 3/2 components show that the reduced Co magnetic moment found in the Co 66 Fe 4 Ni 1 B 14 Si 15 amorphous glass is due to the transfer of ↑-spin valence electron density to the ↓-spin valence band upon glass formation. SRXPS also allows investigation of spin-dependent core-hole screening processes and satellite production, as demonstrated in SRXPS studies of ferromagnetic Ni. Future directions of SRXPS are also explored. copyright 1996 American Vacuum Society

Band alignment and interfacial chemical structure of the HfLaO/InGaZnO4 heterojunction investigated by x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Qian, Ling-Xuan; Wu, Ze-Han; Zhang, Yi-Yu; Liu, Xing-Zhao; Li, Yan-Rong; Liu, Yuan; Song, Jia-Qi

2017-01-01

Amorphous InGaZnO 4 thin film transistors (a-IGZO TFTs) with HfLaO gate dielectrics have been widely demonstrated to possess extremely excellent electrical characteristics, and thus show great potential for applications in various next-generation electronic products. Nevertheless, the in-depth understanding of HfLaO/IGZO interfacial features is still lacking, which makes further device optimization lack clear guidance. In this work, the band alignment and interfacial chemical structure of a sputtering-prepared HfLaO/IGZO heterojunction was investigated through x-ray photoelectron spectroscopy. The valence and conduction band offsets (Δ E v and Δ E c ) at the interface were determined to be 0.57 eV and 1.48 eV, respectively. The relatively large Δ E v is mainly attributed to the formation of the interfacial layer (IL) and thus the upward band bending from IGZO to the surface of HfLaO. Furthermore, it was found that the oxygen vacancies on the surface of IGZO were significantly suppressed upon the deposition of HfLaO, which not only explained the previously reported ultrahigh performance of a-IGZO/HfLaO TFTs to some extent, but also additionally validated the formation of the IL. Our findings have successfully revealed the importance of ILs in modifying the band alignment and interfacial trap states of HfLaO/IGZO heterojunctions, thus suggesting a potential route to further optimizing a-IGZO/HfLaO TFTs so as to satisfy the requirements of next-generation technologies. (paper)

X-ray photoelectron spectroscopy of high-temperature superconductor clean surfaces and interfaces

International Nuclear Information System (INIS)

Hill, D.M.

1989-01-01

X-ray photoelectron spectroscopy was used to determine the characteristic spectra for the high temperature superconductors La 1.85 Sr 0.15 CuO 4 , YBa 2 Cu 3 O 7-x , and Bi 2 Sr 2-x Ca 1+x Cu 2 O 8+y and their impurity phases. The oxidation state of Cu in all of these materials was predominantly Cu 2+ . The O 1s emission for clean surfaces was a single broad peak near 529 eV derived from emission from inequivalent O sites in the superconductors. The valence bands were a -6 eV wide manifold of Cu 3d-O 2p hybrid bands in the ∼ 1-7 eV binding energy range, with very low emission at E F arising from antibonding Cu 3d-O 2p orbitals. Emission from grain boundary and other impurity phases appeared at 531 eV for the O 1s core level, and in general ∼ 1-2 eV higher energy than the superconductor peak for other core levels except for Cu 2p. Impurity phases appeared in the valence bands as a shoulder at ∼ 5 eV. The amount of impurities detected was shown to be dependent on the fracture properties of the superconductors. All of the materials were shown to be stable under vacuum. The products and spatial extent of chemical reactions with Ag, Al, Al oxide, Au, Bi, Bi oxide, CaF 2 , Cu, Fe, Si, and Si oxide overlayers on these materials also were examined. Au, CaF 2 , and metal oxides deposited by activated oxidation during evaporation were non-reactive and non-disruptive of the superconductor surfaces. Ag overlayers were unique in that they disrupted the superconductor during deposition, but exhibited no evidence of any chemical reactions. Overlayers with an affinity for oxygen withdrew O from the superconductor. The O loss occurred preferentially from Cu atoms in the superconductor and disrupted the planar bonding structure

Thickness-dependent change in the valence band offset of the SiO{sub 2}/Si interface studied using synchrotron-radiation photoemission spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Toyoda, S., E-mail: toyoda.satoshi.4w@kyoto-u.ac.jp; Oshima, M. [Department of Applied Chemistry, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-08-28

We have studied the thickness-dependent change in the valence band offset (VBO) of the SiO{sub 2}/Si(001) interface using synchrotron-radiation photoemission spectroscopy with soft and hard X-rays. The SiO{sub 2}-film thickness (T{sub ox}) and X-ray irradiation time (t{sub irrad}) were systematically parameterized to distinguish between the “intrinsic” T{sub ox} effects in the VBOs and the “extrinsic” differential charging phenomena in SiO{sub 2} films on Si substrates. The results revealed that at a spontaneous time (t{sub irrad} ≈ 5 s) that suppresses the differential charging phenomena as much as possible, the experimental VBO abruptly increases as a function of T{sub ox} and gradually saturates to the traditional VBO value range determined by the internal photoemission and photoconduction measurements. This effect is not attributed to the differential charging phenomena, but rather it is attributed to the “intrinsic” T{sub ox}-dependent change in the VBO. The two possible physical behaviors include electronic polarization and image charge. We have derived the electronic polarization contribution from experimental data by carefully describing the effects of the long-range image charges based on the classical dielectric-screening model.

The superconducting high-resolution soft X-ray spectrometer at the advanced biological and environmental X-ray facility

Energy Technology Data Exchange (ETDEWEB)

Friedrich, S. [Advanced Detector Group, Lawrence Livermore National Laboratory, 7000 East Avenue, L-188, Livermore, CA 94550 (United States); Advanced Biological and Environmental X-ray Facility, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 94720 (United States)], E-mail: Friedrich1@llnl.gov; Drury, O.B. [Advanced Detector Group, Lawrence Livermore National Laboratory, 7000 East Avenue, L-188, Livermore, CA 94550 (United States); Advanced Biological and Environmental X-ray Facility, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 94720 (United States); Biophysics Group, University of California, 1 Shields Avenue, EU-III, Davis, CA 95616 (United States); George, S.J. [Advanced Biological and Environmental X-ray Facility, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 94720 (United States); Cramer, S.P. [Advanced Biological and Environmental X-ray Facility, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 94720 (United States); Biophysics Group, University of California, 1 Shields Avenue, EU-III, Davis, CA 95616 (United States)

2007-11-11

We have built a 36-pixel superconducting tunnel junction X-ray spectrometer for chemical analysis of dilute samples in the soft X-ray band. It offers an energy resolution of {approx}10-20 eV FWHM below 1 keV, a solid angle coverage of {approx}10{sup -3}, and can be operated at total rates of up to {approx}10{sup 6} counts/s. Here, we describe the spectrometer performance in speciation measurements by fluorescence-detected X-ray absorption spectroscopy at the Advanced Biological and Environmental X-ray facility at the ALS synchrotron.

X-ray absorption investigation of the valence state and electronic structure of La1−xCaxCoO3−δ in comparison with La1−xSrxCoO3−δ and La1−xSrxFeO3−δ

International Nuclear Information System (INIS)

Haas, O.; Ludwig, Chr.; Bergmann, U.; Singh, R.N.; Braun, A.; Graule, T.

2011-01-01

3d metal K-shell X-ray absorption spectra of perovskites with the composition La 1−x Ca x CoO 3−δ (x=0, 0.2, 0.4, 0.5, 0.6, 0.8), La 1−x Sr x CoO 3−δ (x=0, 0.1, 0.2, 0.3, 0.4, 0.5) and La 1−x Sr x FeO 3−δ (x=0, 0.2, 0.4, 0.5, 0.6, 0.8) are compared on the basis of pre-edges, white line features and extended fine structures. The measurements were performed at 300 K and for La 1−x Ca x CoO 3−δ also at temperatures as low as 10–20 K. Going to low-temperature the measurements indicate an increase in t 2g ⁎ and a decrease in e g ⁎ orbital occupancy, which is most accentuated in the LaCoO 3 sample. Virtually no Co K-edge shift was observed for the La 1−x Ca x CoO 3−δ and La 1−x Sr x CoO 3−δ compounds and the Co–O distances are also not significantly reduced when La 3+ is partially substituted by Ca 2+ or Sr 2+ . From the pre-edge features of these perovskites we are tended to conclude that the t 2g ⁎ orbitals are less, and the e g ⁎ orbitals are more occupied with increasing x in the Ca and Sr substituted compounds, whereas the total d-electron density is not changing. These results indicate that cobalt prefers a valence state of 3 + in these Co perovskites. This could also be confirmed with iodometric titrations. The Fe perovskites behave differently. In contrast to the Co perovskites, for La 1−x Sr x FeO 3−δ perovskites the Fe K-edge is shifted, the pre-edge features intensity is increasing and the Fe–O bond length is decreasing with increasing x. The valence states of the iron in the La 1−x Sr x FeO 3−δ perovskites in fact increase as much as x increases. - Graphical abstract: Co K and Fe K pre-edge of La 1−x Ca x CoO 3−δ and La 1−x Sr x FeO 3−δ perovskites one of the evidences in favor of δ=x/2 for the Co-perovskites and δ=0 for the Fe-perovskites. Highlights: ► XAS a valuable tool to evaluate the valence states of Co and Fe perovskites. ► For La 1−x Ca x CoO 3−δ and La 1−x Sr x CoO 3�

Diffracted X-ray tracking for monitoring intramolecular motion in individual protein molecules using broad band X-ray

Energy Technology Data Exchange (ETDEWEB)

Ichiyanagi, Kouhei; Sasaki, Yuji C. [Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 609 Kiban Building 5-1-5 Kashiwanoha, Kahiwashi, Chiba 277-8561 (Japan); Japan Science and Technology Agency, CREST, CREST, Sasaki-Team, 609 Kiban Building, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561 (Japan); Sekiguchi, Hiroshi; Hoshino, Masato; Kajiwara, Kentaro; Senba, Yasunori; Ohashi, Haruhiko; Ohta, Noboru [Japan Synchrotron Radiation Research Institute, SPring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan); Hoshisashi, Kentaro; Jae-won, Chang; Tokue, Maki; Matsushita, Yufuku [Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, 609 Kiban Building 5-1-5 Kashiwanoha, Kahiwashi, Chiba 277-8561 (Japan); Nishijima, Masaki; Inoue, Yoshihisa [Department of Applied Chemistry and Office for University-Industry Collaboration, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Yagi, Naoto [Japan Science and Technology Agency, CREST, CREST, Sasaki-Team, 609 Kiban Building, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561 (Japan); Japan Synchrotron Radiation Research Institute, SPring-8, 1-1-1 Kouto, Sayo, Hyogo 679-5198 (Japan)

2013-10-15

Diffracted X-ray tracking (DXT) enables the tilting and twisting motions of single protein molecules to be monitored with micro- to milliradian resolution using a highly brilliant X-ray source with a wide energy bandwidth. We have developed a technique to monitor single molecules using gold nanocrystals attached to individual protein molecules using the BL28B2 beamline at SPring-8. In this paper we present the installation of a single toroidal X-ray mirror at BL28B2 to focus X-rays in an energy range of 10–20 keV (△E/E = 82% for an X-ray with a wide energy bandwidth). With this beamline we tracked diffraction spots from gold nanocrystals over a wide angle range than that using quasi-monochromatic X-rays. Application of the wide angle DXT technique to biological systems enabled us to observe the on-site motions of single protein molecules that have been functionalized in vivo. We further extend the capability of DXT by observing the fractional tilting and twisting motions of inner proteins under various conditions. As a proof of this methodology and to determine instrumental performance the intramolecular motions of a human serum albumin complex with 2-anthracenecarboxylic acid was investigated using the BL28B2 beamline. The random tilting and twisting intramolecular motions are shown to be directly linked to the movement of individual protein molecules in the buffer solution.

X-ray clusters of galaxies

International Nuclear Information System (INIS)

McKee, J.D.

1980-01-01

This work is in three chapters, of which the first is an introduction to clusters of galaxies. The second chapter describes the HEAO A-2 Survey of Abell Clusters. The 225 clusters of galaxies listed in Abell's (1958) catalog which are of distance class four or less, were surveyed for 2 to 10 keV x-ray emission. Thirty-two identifications of x-ray sources with the clusters were made, fluxes and error boxes were determined for these sources; twelve of the identifications are new. The x-ray luminosity function has been derived and analytical fits have been made, the best fit is f(L) = 26.9 x 10 -8 exp( - L 44 /1.7) per Mpc per 10 44 erg s -1 per 2 to 10 keV band pass. The relationship between x-ray luminosity, Bautz-Morgan type, Rood-Sastry type, and richness has also been examined. The contribution of clusters to the x-ray background has been calculated from the luminosity function and has been found to be 3.5%, and with 90% certainty, less than 8% in the 2 to 10 keV band pass, assuming that clusters were not brighter in the past than they are at present. If they were bright enough in the past to account for the x-ray background, the evolution must have scaled more rapidly than (1 + z) 7 if clusters formed at z = 3, or (1 + z) 5 if clusters formed at z = 10. Chapter Three examines x-ray emission from poor clusters of galaxies. Burns and Owens' (1979) sample of 25 4C radio sources which coincide with Zwicky clusters of galaxies has been searched for x-ray emission in the HEAO A-2 data base. X-ray emission was detected from five sources at the 3sigma level, two exceeded 5 sigma. The search for x-ray emission was prompted by the knowledge of the existence of distorted radio sources in the clusters. The distortion implies the presence of a relatively dense intracluster medium which is expected to produce thermal bremsstrahlung x-ray emission

Tunneling emission of electrons from semiconductors' valence bands in high electric fields

International Nuclear Information System (INIS)

Kalganov, V. D.; Mileshkina, N. V.; Ostroumova, E. V.

2006-01-01

Tunneling emission currents of electrons from semiconductors to vacuum (needle-shaped GaAs photodetectors) and to a metal (silicon metal-insulator-semiconductor diodes with a tunneling-transparent insulator layer) are studied in high and ultrahigh electric fields. It is shown that, in semiconductors with the n-type conductivity, the major contribution to the emission current is made by the tunneling emission of electrons from the valence band of the semiconductor, rather than from the conduction band

Compaction bands in shale revealed through digital volume correlation of time-resolved X-ray tomography scans

Science.gov (United States)

McBeck, J.; Kobchenko, M.; Hall, S.; Tudisco, E.; Cordonnier, B.; Renard, F.

2017-12-01

Previous studies have identified compaction bands primarily within sandstones, and in fewer instances, within other porous rocks and sediments. Using Digital Volume Correlation (DVC) of X-ray microtomography scans, we find evidence of localized zones of high axial contraction that form tabular structures sub-perpendicular to maximum compression, σ1, in Green River shale. To capture in situ strain localization throughout loading, two shale cores were deformed in the HADES triaxial deformation apparatus installed on the X-ray microtomography beamline ID19 at the European Synchrotron Radiation Facility. In these experiments, we increase σ1 in increments of two MPa, with constant confining pressure (20 MPa), until the sample fails in macroscopic shear. After each stress step, a 3D image of the sample inside the rig is acquired at a voxel resolution of 6.5 μm. The evolution of lower density regions within 3D reconstructions of linear attenuation coefficients reveal the development of fractures that fail with some opening. If a fracture produces negligible dilation, it may remain undetected in image segmentation of the reconstructions. We use the DVC software TomoWarp2 to identify undetected fractures and capture the 3D incremental displacement field between each successive pair of microtomography scans acquired in each experiment. The corresponding strain fields reveal localized bands of high axial contraction that host minimal shear strain, and thus match the kinematic definition of compaction bands. The bands develop sub-perpendicular to σ1 in the two samples in which pre-existing bedding laminations were oriented parallel and perpendicular to σ1. As the shales deform plastically toward macroscopic shear failure, the number of bands and axial contraction within the bands increase, while the spacing between the bands decreases. Compaction band development accelerates the rate of overall axial contraction, increasing the mean axial contraction throughout the sample

A Combined Theoretical and Experimental View on Valence and Conduction Band Densities of States of Lead Halide Perovskites

Science.gov (United States)

Kronik, Leeor; Endres, James; Egger, David A.; Kulbak, Michael; Kerner, Ross A.; Zhao, Lianfeng; Silver, Scott H.; Hodes, Gary; Rand, Barry P.; Cahen, David; Kahn, Antoine

We present results for the valence and conduction band density of states (DOS), measured via ultraviolet and inverse photoemission spectroscopies for three lead halide perovskites. Specifically, the DOS of MAPbI3, MAPbBr3, and CsPbBr3, grown on different substrates, are compared. Theoretical DOS, calculated via hybrid density functional theory and including spin-orbit coupling, are compared to experimental data. The agreement between experiment and theory, obtained after correcting the latter for quantitative discrepancies, leads to the identification of valence and conduction band spectral features. In particular, this comparison allows for precise determination of the energy position of the band edges, namely ionization energies and electron affinities of these materials. We find an unusually low DOS at the valence band maximum (VBM) of these systems, which confirms and generalizes previous findings of strong band dispersion and low DOS at the VBM of MAPbI3. This calls for special attention when using electron spectroscopy to determine the frontier electronic states of lead halide perovskites.

A study of the Fe-based superconductor SmFeAsO{sub 1-x}F{sub x} by x-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Zhang, Y; Chen, Y L; Cui, Y J; Cheng, C H; Zhao, Y [Key Laboratory of Magnetic Levitation Technologies and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Mail Stop 165, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); Zhang, H [Department of Physics, Peking University, Beijing 100871 (China)], E-mail: yzhao@swjtu.edu.cn

2009-01-15

The electronic structure of the Fe-based superconductor SmFeAsO{sub 1-x}F{sub x} (x = 0 and 0.2) is studied with x-ray photoemission spectroscopy (XPS) through comparing the band structures of the nonsuperconducting parent material SmFeAsO and the superconducting SmFeAsO{sub 0.8}F{sub 0.2} (T{sub c} = 52.5 K). A small peak centered at 0.2 eV below the Fermi level, E{sub F}, in the valence band is observed in the parent material SmFeAsO, which is due to the low-spin state of the Fe 3d electrons. With fluorine doping, the peak at 0.2 eV disappears and a broad plateau forms near the Fermi level; in the meantime, the density of states at E{sub F} is slightly suppressed. The O 1s and Sm 3d core levels shift towards high energy by {approx}0.55 eV with fluorine doping, but in a sharp comparison, the Fe 2p and As 3d core levels do not shift significantly (the binding energy shift is less than 0.01 eV). It is deduced from the core-level shifts that the Fermi level of the system moves up by 0.55 eV by fluorine doping.

The effect of Bi composition on the properties of InP{sub 1−x}Bi{sub x} grown by liquid phase epitaxy

Energy Technology Data Exchange (ETDEWEB)

Das, T. D., E-mail: tddas@hotmail.com [Department of Electronic Science, University of Calcutta, 92, A. P. C. Road, Kolkata 700009 (India)

2014-05-07

InP{sub 1−x}Bi{sub x} epilayers (x ≥ 1.2%) on InP (001) are grown reproducibly by liquid phase epitaxy with conventional solution baking in a H{sub 2} environment. The Bi composition and surface morphology of the grown layers are studied by secondary ion mass spectroscopy and atomic force microscopy, respectively. High-resolution x-ray diffraction is used to characterize the lattice parameters and the crystalline quality of the layers. 10 K photoluminescence measurements indicate three clearly resolved peaks in undoped InP layers with band-to-band transition at 1.42 eV which is redshifted with Bi incorporation in the layer with a maximum band gap reduction of 50 meV/% Bi. The effect is attributed to the interaction between the valence band edge and Bi-related defect states as is explained here by valence-band anticrossing model. Room temperature Hall measurements indicate that the mobility of the layer is not significantly affected for Bi concentration up to 1.2%.

Characteristics of charge coupled devices over X-ray spectral band

Energy Technology Data Exchange (ETDEWEB)

Mishenskij, V O; Volkov, G S; Zajtsev, V I; Zazhivikhin, V V [Troitsk Institute for Thermonuclear and Innovation Investigations (Russian Federation)

1997-12-31

The results of theoretical and experimental investigation of the sensitivity and spatial resolution of charge coupled devices (CCD) influenced by X-ray quanta are reported. Both a calculation model of the interaction process between the X-ray radiation and the CCD-structure and experimental results of investigation of the CCD characteristics are presented. The theoretical model of interaction between X-ray radiation and CCD is suggested. In accordance with the model, the calculations of CCD sensitivity and spatial resolution, depending on the X-ray energy, are performed. The results of comparison of the calculated and experimental data obtained for linear CCD (LCCD) are presented. The CCD has a maximum sensitivity of approx. (1-2.5) . 10{sup 7} V.cm{sup 2}/J for quanta of energies of 0.5-8 keV. The CCD spatial resolution varies from 15-20 {mu}m (CCD gate size) for quanta of energies less then 4 keV and deteriorates up to 150 {mu}m for harder radiation (20-50 keV). CCD usage as space-resolving detectors for high-power installation diagnostics is presented. Other fields of CCD application for X-ray detection are discussed. Advantages of CCD in comparison with the traditional X-ray films is discussed from this point of view. (author). 4 figs., 3 refs.

Resonant x-ray emission from gas-phase TiCl4

International Nuclear Information System (INIS)

Hague, C.F.; Tronc, M.; De Groot, F.

1997-01-01

Resonant x-ray emission spectroscopy (RXES) has proved to be a powerful tool for studying the electronic structure of condensed matter. Over the past few years it has been used mainly for studying the valence bands of solids and condensed molecules. Very recently the advent of high brightness photon beams provided by third generation synchrotron radiation source undulators, associated with efficient x-ray emission spectrometers has made it possible to perform experiments on free diatomic molecular systems. RXE spectra of free molecules are of prime importance to gain insight into their electronic structure and bonding as they reflect the symmetry of orbitals engaged in the two-electron, two-step process with the l = 0, ±2 parity-conserving selection rule, and are free from solid state effects which can introduce difficulties in the interpretation. They provide information (more so than XAS) on the core excited states, and, when performed at fixed incident photon energy as a function of the emitted photon energy, on the electronic excitation (charge transfer, multiplet states). Moreover the anisotropy of the angular distribution of resonant x-ray emission affects the relative intensity of the emission peaks and provides information concerning the symmetries of final states. This is a preliminary report on what are the first RXE spectra of a 3d transition metal complex in the gas phase. The experiment concerns the Ti 3d →2p emission spectrum of TiCl 4 over the 450 to 470 eV region

Synchrotron X-ray Investigations of Mineral-Microbe-Metal Interactions

International Nuclear Information System (INIS)

Kemner, Kenneth M.; O'Loughlin, Edward J.; Kelly, Shelly D.; Boyanov, Maxim I.

2005-01-01

Interactions between microbes and minerals can play an important role in metal transformations (i.e. changes to an element's valence state, coordination chemistry, or both), which can ultimately affect that element's mobility. Mineralogy affects microbial metabolism and ecology in a system; microbes, in turn, can affect the system's mineralogy. Increasingly, synchrotron-based X-ray experiments are in routine use for determining an element's valence state and coordination chemistry, as well as for examining the role of microbes in metal transformations.

Periodicity Analysis of X-ray Light Curves of SS 433

Science.gov (United States)

Wang, Jun-yi; Lu, Xiang-long; Zhao, Qiu-wen; Dong, Dian-qiao; Lao, Bao-qiang; Lu, Yang; Wei, Yan-heng; Wu, Xiao-cong; An, Tao

2017-01-01

SS 433 is sofar the unique X-ray binary that has the simultaneously detected orbital period, super-orbital period, and nutation period, as well as a bidirectional spiral jet. The study on its X-ray light variability is helpful for understanding the dynamic process of the system, and the correlations between the different wavebands. In this paper, two time-series analysis techniques, i.e., the Lomb-Scargle periodogram and weighted wavelet Z-transform, are employed to search for the periods in the Swift/BAT (Burst Alert Telescope) (15-50 keV) and RXTE/ASM (Rose X-ray Timing Explorer/All Sky Monitor) (1.5-3, 3- 4, and 5-12 keV) light curves of SS 433, and the Monte Carlo simulation is performed for the obtained periodical components. For the 15-50 keV energy band, five significant periodical components are detected, which are P1(∼6.29 d), P2 (∼6.54 d), P3 (∼13.08 d), P4 (∼81.50 d), and P5 (∼162.30 d). For the 3-5 and 5-12 keV energy bands, the periodical components P3 (∼13 d) and P5 (∼162 d) are detected in both energy bands. However, for the 1.5-3 keV energy band, no significant periodic signal is detected. P5 is the strongest periodic signal in the power spectrum for all the energy bands of 3-5, 5-12, and 15-50 keV, and it is consistent with the previous result obtained from the study of optical light curves. Furthermore, in combination with the radio spiral jet of SS 433, it is suggested that the X-ray and optical variability of P5 (∼162 d) is probably related to the precession of its relativistic jet. The high correlation between the X-ray and optical light curves may also imply that the X-ray and optical radiations are of the same physical origin. P3 shows a good agreement with the orbital period (∼13.07 d) obtained by the previous study, and P2 and P4 are respectively the high-frequency harmonics of P3 and P5. P1 is detected only in the power spectrum of the 15-50 keV energy band, and it is consistent with the nutation period of the system. As

Valence band electronic structure of Pd based ternary chalcogenide superconductors

Energy Technology Data Exchange (ETDEWEB)

Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

2016-12-15

Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

ADVANCED X-BAND TEST ACCELERATOR FOR HIGH BRIGHTNESS ELECTRON AND GAMMA RAY BEAMS

Energy Technology Data Exchange (ETDEWEB)

Marsh, R A; Anderson, S G; Barty, C P; Chu, T S; Ebbers, C A; Gibson, D J; Hartemann, F V; Adolphsen, C; Jongewaard, E N; Raubenheimer, T; Tantawi, S G; Vlieks, A E; Wang, J W

2010-05-12

In support of Compton scattering gamma-ray source efforts at LLNL, a multi-bunch test stand is being developed to investigate accelerator optimization for future upgrades. This test stand will enable work to explore the science and technology paths required to boost the current 10 Hz monoenergetic gamma-ray (MEGa-Ray) technology to an effective repetition rate exceeding 1 kHz, potentially increasing the average gamma-ray brightness by two orders of magnitude. Multiple bunches must be of exceedingly high quality to produce narrow-bandwidth gamma-rays. Modeling efforts will be presented, along with plans for a multi-bunch test stand at LLNL. The test stand will consist of a 5.5 cell X-band rf photoinjector, single accelerator section, and beam diagnostics. The photoinjector will be a high gradient standing wave structure, featuring a dual feed racetrack coupler. The accelerator will increase the electron energy so that the emittance can be measured using quadrupole scanning techniques. Multi-bunch diagnostics will be developed so that the beam quality can be measured and compared with theory. Design will be presented with modeling simulations, and layout plans.

Decreasing the Hydroxylation Affinity of La _1–x Sr _x MnO ₃ Perovskites To Promote Oxygen Reduction Electrocatalysis

Energy Technology Data Exchange (ETDEWEB)

Stoerzinger, Kelsey A.; Hong, Wesley T.; Wang, Xiao Renshaw; Rao, Reshma R.; Bengaluru Subramanyam, Srinivas; Li, Changjian; Ariando,; Venkatesan, T.; Liu, Qiang [Advanced; Crumlin, Ethan J. [Advanced; Varanasi, Kripa K.; Shao-Horn, Yang

2017-11-17

Understanding the interaction between oxides and water is critical to design many of their functionalities, including the electrocatalysis of molecular oxygen reduction. In this study, we probed the hydroxylation of model (001)-oriented La(1-x)SrxMnO3 (LSMO) perovskite surfaces, where the electronic structure and manganese valence was controlled by five substitution levels of lanthanum with strontium, using ambient pressure X-ray photoelectron spectroscopy in a humid environment. The degree of hydroxyl formation on the oxide surface correlated with the proximity of the valence band center relative to the Fermi level. LSMO perovskites with a valence band center closer to the Fermi level were more reactive toward water, forming more hydroxyl species at a given relative humidity. More hydroxyl species correlate with greater electron-donating character to the surface free energy in wetting, and reduce the activity to catalyze oxygen reduction reaction (ORR) kinetics in basic solution. New strategies to design more active catalysts should include design of electronically conducting oxides with lower valence band centers relative to the Fermi level at ORR-relevant potentials.

Creation of X-Ray Transparency of Matter by Stimulated Elastic Forward Scattering.

Science.gov (United States)

Stöhr, J; Scherz, A

2015-09-04

X-ray absorption by matter has long been described by the famous Beer-Lambert law. Here, we show how this fundamental law needs to be modified for high-intensity coherent x-ray pulses, now available at x-ray free electron lasers, due to the onset of stimulated elastic forward scattering. We present an analytical expression for the modified polarization-dependent Beer-Lambert law for the case of resonant core-to-valence electronic transitions and incident transform limited x-ray pulses. Upon transmission through a solid, the resonant absorption and dichroic contrasts are found to vanish with increasing x-ray intensity, with the stimulation threshold lowered by orders of magnitude through a resonant superradiantlike effect. Our results have broad implications for the study of matter with x-ray lasers.

Blazars in Hard X-rays

Science.gov (United States)

Ghisellini, Gabriele

2009-05-01

Although blazars are thought to emit most of their luminosity in the γ-ray band, there are subclasses of them very prominent in hard X-rays. These are the best candidates to be studied by Simbol-X. They are at the extremes of the blazar sequence, having very small or very high jet powers. The former are the class of TeV emitting BL Lacs, whose synchrotron emission often peaks at tens of keV or more. The latter are the blazars with the most powerful jets, have high black hole masses accreting at high (i.e. close to Eddington) rates. These sources are predicted to have their high energy peak even below the MeV band, and therefore are very promising candidates to be studied with Simbol-X.

Electronic structure study of wide band gap magnetic semiconductor (La0.6Pr0.4)0.65Ca0.35MnO3 nanocrystals in paramagnetic and ferromagnetic phases

Science.gov (United States)

Dwivedi, G. D.; Joshi, Amish G.; Kumar, Shiv; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L.; Ghosh, A. K.; Chatterjee, Sandip

2016-04-01

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La0.6Pr0.4)0.65Ca0.35MnO3 near Fermi-level. XMCD results indicate that Mn3+ and Mn4+ spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La0.6Pr0.4)0.65Ca0.35MnO3 system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below TC. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

Optical gain and gain suppression of quantum-well lasers with valence band mixing

International Nuclear Information System (INIS)

Ahn, D.; Chuang, S.L.

1990-01-01

The effects of valence band mixing on the nonlinear gains of quantum-well lasers are studied theoretically. The authors' analysis is based on the multiband effective-mass theory and the density matrix formalism with intraband relaxation taken into account. The gain and the gain-suppression coefficient of a quantum-well laser are calculated from the complex optical susceptibility obtained by the density matrix formulation with the theoretical dipole moments obtained from the multiband effective-mass theory. The calculated gain spectrum shows that there are remarkable differences (both in peak amplitude and spectral shape) between our model with valence band mixing and the conventional parabolic band model. The shape of the gain spectrum calculated by the authors' model becomes more symmetric due to intraband relaxation together with nonparabolic energy dispersions and is closer to the experimental observations when compared with the conventional method using the parabolic band model and the multiband effective-mass calculation without intraband relaxation. Both give quite asymmetric gain spectra. Optical intensity in the GaAs active region is estimated by solving rate equations for the stationary states with nonlinear gain suppression. The authors calculate the mode gain for the resonant mode including the gain suppression, which results in spectral hole burning of the gain spectrum

A structural study of ceramic oxides by X-ray absorption spectroscopy

International Nuclear Information System (INIS)

Akhtar, M.J.

1995-01-01

A detailed structural study of ceramic oxides is presented by employing X-ray Absorption Spectroscopy (XAS). In the present work X-ray Absorption Near Edge Structure (XANES) is used for the investigation of valence state of metal cations; whereas, Extended X-ray Absorption Fine Structure EXAFS) is employed for the determination for bond lengths, coordination numbers and nature of the elements present in the near neighbour shells surrounding the absorbing atom. These results show that local environment of dopant and host cations are different; and this variation in local structure depends on the nature and concentration of the dopant ions. (author)

The X-ray Astronomy Recovery Mission

Science.gov (United States)

Tashiro, M.; Kelley, R.

2017-10-01

On 25 March 2016, the Japanese 6th X-ray astronomical satellite ASTRO-H (Hitomi), launched on February 17, lost communication after a series of mishap in its attitude control system. In response to the mishap the X-ray astronomy community and JAXA analyzed the direct and root cause of the mishap and investigated possibility of a recovery mission with the international collaborator NASA and ESA. Thanks to great effort of scientists, agencies, and governments, the X-ray Astronomy Recovery Mission (XARM) are proposed. The recovery mission is planned to resume high resolution X-ray spectroscopy with imaging realized by Hitomi under the international collaboration in the shortest time possible, simply by focusing one of the main science goals of Hitomi Resolving astrophysical problems by precise high-resolution X-ray spectroscopy'. XARM will carry a 6 x 6 pixelized X-ray micro-calorimeter on the focal plane of an X-ray mirror assembly, and an aligned X-ray CCD camera covering the same energy band and wider field of view, but no hard X-ray or soft gamma-ray instruments are onboard. In this paper, we introduce the science objectives, mission concept, and schedule of XARM.

Band offsets in ITO/Ga2O3 heterostructures

Science.gov (United States)

Carey, Patrick H.; Ren, F.; Hays, David C.; Gila, B. P.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito

2017-11-01

The valence band offsets in rf-sputtered Indium Tin Oxide (ITO)/single crystal β-Ga2O3 (ITO/Ga2O3) heterostructures were measured with X-Ray Photoelectron Spectroscopy using the Kraut method. The bandgaps of the component materials in the heterostructure were determined by Reflection Electron Energy Loss Spectroscopy as 4.6 eV for Ga2O3 and 3.5 eV for ITO. The valence band offset was determined to be -0.78 ± 0.30 eV, while the conduction band offset was determined to be -0.32 ± 0.13 eV. The ITO/Ga2O3 system has a nested gap (type I) alignment. The use of a thin layer of ITO between a metal and the Ga2O3 is an attractive approach for reducing contact resistance on Ga2O3-based power electronic devices and solar-blind photodetectors.

The hard x-ray imager onboard IXO

Science.gov (United States)

Nakazawa, Kazuhiro; Takahashi, Tadayuki; Limousin, Olivier; Kokubun, Motohide; Watanabe, Shin; Laurent, Philippe; Arnaud, Monique; Tajima, Hiroyasu

2010-07-01

The Hard X-ray Imager (HXI) is one of the instruments onboard International X-ray Observatory (IXO), to be launched into orbit in 2020s. It covers the energy band of 10-40 keV, providing imaging-spectroscopy with a field of view of 8 x 8 arcmin2. The HXI is attached beneath the Wide Field Imager (WFI) covering 0.1-15 keV. Combined with the super-mirror coating on the mirror assembly, this configuration provides observation of X-ray source in wide energy band (0.1-40.0 keV) simultaneously, which is especially important for varying sources. The HXI sensor part consists of the semiconductor imaging spectrometer, using Si in the medium energy detector and CdTe in the high energy detector as its material, and an active shield covering its back to reduce background in orbit. The HXI technology is based on those of the Japanese-lead new generation X-ray observatory ASTRO-H, and partly from those developed for Simbol-X. Therefore, the technological development is in good progress. In the IXO mission, HXI will provide a major assets to identify the nature of the object by penetrating into thick absorbing materials and determined the inherent spectral shape in the energy band well above the structure around Fe-K lines and edges.

Imaging ultrafast excited state pathways in transition metal complexes by X-ray transient absorption and scattering using X-ray free electron laser source

DEFF Research Database (Denmark)

Chen, Lin X; Shelby, Megan L; Lestrange, Patrick J

2016-01-01

This report will describe our recent studies of transition metal complex structural dynamics on the fs and ps time scales using an X-ray free electron laser source, Linac Coherent Light Source (LCLS). Ultrafast XANES spectra at the Ni K-edge of nickel(ii) tetramesitylporphyrin (NiTMP) were measured...... on the low-energy shoulder of the edge, which is aided by the computation of X-ray transitions for postulated excited electronic states. The observed and computed inner shell to valence orbital transition energies demonstrate and quantify the influence of the electronic configuration on specific metal...

A deep X-ray view of the bare AGN Ark 120. III. X-ray timing analysis and multiwavelength variability

Science.gov (United States)

Lobban, A. P.; Porquet, D.; Reeves, J. N.; Markowitz, A.; Nardini, E.; Grosso, N.

2018-03-01

We present the spectral/timing properties of the bare Seyfert galaxy Ark 120 through a deep ˜420 ks XMM-Newton campaign plus recent NuSTAR observations and a ˜6-month Swift monitoring campaign. We investigate the spectral decomposition through fractional rms, covariance and difference spectra, finding the mid- to long-time-scale (˜day-year) variability to be dominated by a relatively smooth, steep component, peaking in the soft X-ray band. Additionally, we find evidence for variable Fe K emission redward of the Fe Kα core on long time-scales, consistent with previous findings. We detect a clearly defined power spectrum which we model with a power law with a slope of α ˜ 1.9. By extending the power spectrum to lower frequencies through the inclusion of Swift and Rossi X-ray Timing Explorer data, we find tentative evidence of a high-frequency break, consistent with existing scaling relations. We also explore frequency-dependent Fourier time lags, detecting a negative (`soft') lag for the first time in this source with the 0.3-1 keV band lagging behind the 1-4 keV band with a time delay, τ, of ˜900 s. Finally, we analyse the variability in the optical and ultraviolet (UV) bands using the Optical/UV Monitor onboard XMM-Newton and the Ultra-Violet/Optical Telescope onboard Swift and search for time-dependent correlations between the optical/UV/X-ray bands. We find tentative evidence for the U-band emission lagging behind the X-rays with a time delay of τ = 2.4 ± 1.8 d, which we discuss in the context of disc reprocessing.

X-ray yields of superdeformed states in 193Hg

International Nuclear Information System (INIS)

Cullen, D.M.; Lee, I.Y.; Baktash, C.

1993-01-01

The K α =x-ray yields associated with the superdeformed and normal-deformed bands in 193 Hg have been measured. The results indicate an excess yield of K α -x rays in coincidence with the superdeformed cascade relative to that in coincidence with the normal-deformed cascade. The internal conversion of known transitions along the superdeformed cascade cannot account for the observed K α -x ray yield. It is likely that this excess x-ray yield is associated with low energy M1 transitions competing with the low-spin superdeformed E2 transitions. These M1 γ rays are expected to connect the two superdeformed bands which are observed in coincidence with each other. Calculations based on the measured γ-ray intensities indicate that within the experimental uncertainties the excess K α yield can be entirely accounted for by interband-M1 transitions. X-ray yields from the recent 193 Hg EUROGAM experiment will also be discussed

Determination of 4f energy levels for trivalent lanthanide ions in YAlO{sub 3} by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Shimizu, Yuhei; Ueda, Kazushige, E-mail: kueda@che.kyutech.ac.jp

2016-09-01

A simple method to analyze 4f energy levels of trivalent lanthanide (Ln) ions was demonstrated by conventional X-ray photoelectron spectroscopy (XPS) measurements using Ln ions doped YAlO{sub 3} sintered polycrystalline samples. Although XPS peaks derived from Ln 4f states overlapped with the host's valence band consisting of O 2p states, the difference XPS spectra between Ln doped and non-doped samples showed only the Ln 4f peaks due to the large difference of photoionization cross sections between Ln 4f and O 2p orbitals. The difference spectra showing Ln 4f states were aligned at the valence band maximum (VBM) making use of the peaks of Al 2p inner shells, and the Ln{sup 3+} 4f energy levels referred to the VBM were determined from the Ln{sup 3+} 4f peak energies. The Ln{sup 3+} 4f energy levels obtained by this simple method were in good agreement with those previously obtained by resonant ultraviolet photoelectron spectroscopy measurements using single crystal samples. - Highlights: • Lanthanide (Ln) 4f energy in YAlO{sub 3} was studied by X-ray photoelectron spectroscopy. • The method used differences in photoionization probability between Ln 4f and O 2p. • Ln 4f states were obtained by difference spectra between Ln- and non-doped samples. • Obtained 4f energy levels agreed with those reported by a sophisticated method.

BAND ALIGNMENT OF ULTRATHIN GIZO/SiO2/Si HETEROSTRUCTURE DETERMINED BY ELECTRON SPECTROSCOPY

Directory of Open Access Journals (Sweden)

Hee Jae Kang2

2011-11-01

Full Text Available Amorphous GaInZnO (GIZO thin films are grown on SiO2/Si substrate by the RF magnetron sputtering method. By thecombination of measured band gaps from reflection energy loss spectroscopy (REELS spectra and valence band fromX-ray photo-electron spectroscopy (XPS spectra, we have demonstrated the energy band alignment of GIZO thin films.The band gap values are 3.2 eV, 3.2 eV, 3.4eV and 3.6eV for the concentration ratios of Ga: In: Zn in GIZO thin filmsare 1:1:1, 2:2:1, 3:2:1 and 4:2:1, respectively. These are attributed to the larger band gap energy of Ga2O3 comparedwith In2O3 and ZnO. The valence band offsets (ΔEv decrease from 2.18 to 1.68 eV with increasing amount of Ga inGIZO thin films for GIZO1 to GIZO4, respectively. These experimental values of band gap and valence band offsetwill provide the further understanding in the fundamental properties of GIZO/SiO2/Si heterostructure, which will beuseful in the design, modeling and analysis of the performance devices applications.

Band Structure Analysis of La0.7Sr0.3MnO3 Perovskite Manganite Using a Synchrotron

Directory of Open Access Journals (Sweden)

Hong-Sub Lee

2015-01-01

Full Text Available Oxide semiconductors and their application in next-generation devices have received a great deal of attention due to their various optical, electric, and magnetic properties. For various applications, an understanding of these properties and their mechanisms is also very important. Various characteristics of these oxides originate from the band structure. In this study, we introduce a band structure analysis technique using a soft X-ray energy source to study a La0.7Sr0.3MnO3 (LSMO oxide semiconductor. The band structure is formed by a valence band, conduction band, band gap, work function, and electron affinity. These can be determined from secondary electron cut-off, valence band spectrum, O 1s core electron, and O K-edge measurements using synchrotron radiation. A detailed analysis of the band structure of the LSMO perovskite manganite oxide semiconductor thin film was established using these techniques.

The effect of basis set and exchange-correlation functional on time-dependent density functional theory calculations within the Tamm-Dancoff approximation of the x-ray emission spectroscopy of transition metal complexes.

Science.gov (United States)

Roper, Ian P E; Besley, Nicholas A

2016-03-21

The simulation of X-ray emission spectra of transition metal complexes with time-dependent density functional theory (TDDFT) is investigated. X-ray emission spectra can be computed within TDDFT in conjunction with the Tamm-Dancoff approximation by using a reference determinant with a vacancy in the relevant core orbital, and these calculations can be performed using the frozen orbital approximation or with the relaxation of the orbitals of the intermediate core-ionised state included. Both standard exchange-correlation functionals and functionals specifically designed for X-ray emission spectroscopy are studied, and it is shown that the computed spectral band profiles are sensitive to the exchange-correlation functional used. The computed intensities of the spectral bands can be rationalised by considering the metal p orbital character of the valence molecular orbitals. To compute X-ray emission spectra with the correct energy scale allowing a direct comparison with experiment requires the relaxation of the core-ionised state to be included and the use of specifically designed functionals with increased amounts of Hartree-Fock exchange in conjunction with high quality basis sets. A range-corrected functional with increased Hartree-Fock exchange in the short range provides transition energies close to experiment and spectral band profiles that have a similar accuracy to those from standard functionals.

Theory of two-photon absorption by exciton states in cubic semiconductors with degenerate valence bands

International Nuclear Information System (INIS)

Nguyen Ai Viet; Nguyen Toan Thang.

1987-06-01

The coefficient of the absorption of two polarized photons is calculated for direct band gap semiconductors with degenerate valence bands. Wannier-Mott exciton states are included in both the intermediate and final states. Numerical calculations are performed for ZnSe and are compared with Sondergeld's experimental and theoretical results. (author). 11 refs, 2 tabs

Resonant x-ray emission from gas-phase TiCl{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Hague, C.F.; Tronc, M. [Universite Pierre et Marie Curie, Paris (France); De Groot, F. [Univ. of Groningen (Netherlands)] [and others

1997-04-01

Resonant x-ray emission spectroscopy (RXES) has proved to be a powerful tool for studying the electronic structure of condensed matter. Over the past few years it has been used mainly for studying the valence bands of solids and condensed molecules. Very recently the advent of high brightness photon beams provided by third generation synchrotron radiation source undulators, associated with efficient x-ray emission spectrometers has made it possible to perform experiments on free diatomic molecular systems. RXE spectra of free molecules are of prime importance to gain insight into their electronic structure and bonding as they reflect the symmetry of orbitals engaged in the two-electron, two-step process with the l = 0, {+-}2 parity-conserving selection rule, and are free from solid state effects which can introduce difficulties in the interpretation. They provide information (more so than XAS) on the core excited states, and, when performed at fixed incident photon energy as a function of the emitted photon energy, on the electronic excitation (charge transfer, multiplet states). Moreover the anisotropy of the angular distribution of resonant x-ray emission affects the relative intensity of the emission peaks and provides information concerning the symmetries of final states. This is a preliminary report on what are the first RXE spectra of a 3d transition metal complex in the gas phase. The experiment concerns the Ti 3d {yields}2p emission spectrum of TiCl{sub 4} over the 450 to 470 eV region.

Fluorescence imaging as a diagnostic of M-band x-ray drive condition in hohlraum with fluorescent Si targets

International Nuclear Information System (INIS)

Li, Qi; Hu, Zhimin; Yao, Li; Huang, Chengwu; Yuan, Zheng; Zhao, Yang; Xiong, Gang; Qing, Bo; Lv, Min; Zhu, Tuo; Deng, Bo; Li, Jin; Wei, Minxi; Zhan, Xiayu; Li, Jun; Yang, Yimeng; Su, Chunxiao; Yang, Guohong; Zhang, Jiyan; Li, Sanwei

2017-01-01

Fluorescence imaging of surrogate Si-doped CH targets has been used to provide a measurement for drive condition of high-energy x-ray (i.e. M-band x-ray) drive symmetry upon the capsule in hohlraum on Shenguang-II laser facility. A series of experiments dedicated to the study of photo-pumping and fluorescence effect in Si-plasma are presented. To investigate the feasibility of fluorescence imaging in Si-plasma, an silicon plasma in Si-foil target is pre-formed at ground state by the soft x-ray from a half-hohlraum, which is then photo-pumped by the K-shell lines from a spatially distinct laser-produced Si-plasma. The resonant Si photon pump is used to improve the fluorescence signal and cause visible image in the Si-foil. Preliminary fluorescence imaging of Si-ball target is performed in both Si-doped and pure Au hohlraum. The usual capsule at the center of the hohlraum is replaced with a solid Si-doped CH-ball (Si-ball). Since the fluorescence is proportional to the photon pump upon the Si-plasma, high-energy x-ray drive symmetry is equal to the fluorescence distribution of the Si-ball. (paper)

X-ray Emitting GHz-Peaked Spectrum Galaxies: Testing a Dynamical-Radiative Model with Broad-Band Spectra

International Nuclear Information System (INIS)

Ostorero, L.; Moderski, R.; Stawarz, L.; Diaferio, A.; Kowalska, I.; Cheung, C.C.; Kataoka, J.; Begelman, M.C.; Wagner, S.J.

2010-01-01

In a dynamical-radiative model we recently developed to describe the physics of compact, GHz-Peaked-Spectrum (GPS) sources, the relativistic jets propagate across the inner, kpc-sized region of the host galaxy, while the electron population of the expanding lobes evolves and emits synchrotron and inverse-Compton (IC) radiation. Interstellar-medium gas clouds engulfed by the expanding lobes, and photoionized by the active nucleus, are responsible for the radio spectral turnover through free-free absorption (FFA) of the synchrotron photons. The model provides a description of the evolution of the GPS spectral energy distribution (SED) with the source expansion, predicting significant and complex high-energy emission, from the X-ray to the γ-ray frequency domain. Here, we test this model with the broad-band SEDs of a sample of eleven X-ray emitting GPS galaxies with Compact-Symmetric-Object (CSO) morphology, and show that: (i) the shape of the radio continuum at frequencies lower than the spectral turnover is indeed well accounted for by the FFA mechanism; (ii) the observed X-ray spectra can be interpreted as non-thermal radiation produced via IC scattering of the local radiation fields off the lobe particles, providing a viable alternative to the thermal, accretion-disk dominated scenario. We also show that the relation between the hydrogen column densities derived from the X-ray (N H ) and radio (N HI ) data of the sources is suggestive of a positive correlation, which, if confirmed by future observations, would provide further support to our scenario of high-energy emitting lobes.

THE SPECTACULAR RADIO-NEAR-IR-X-RAY JET OF 3C 111: THE X-RAY EMISSION MECHANISM AND JET KINEMATICS

Energy Technology Data Exchange (ETDEWEB)

Clautice, Devon; Perlman, Eric S. [Department of Physics and Space Sciences, Florida Institute of Technology, 150 W. University Boulevard, Melbourne, FL 32901 (United States); Georganopoulos, Markos [Department of Physics, University of Maryland—Baltimore County, 1000 Hilltop Circle, Baltimore, MD 21250 (United States); Lister, Matthew L.; Hogan, Brandon [Department of Physics and Astronomy, Purdue University, 525 Northwestern Avenue, West Lafayette, IN 47907 (United States); Tombesi, Francesco [Department of Astronomy, University of Maryland, College Park, MD 20742-2421 (United States); Cara, Mihai [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States); Marshall, Herman L. [Kavli Institute for Astrophysics and Space Research, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Kazanas, Demos [NASA’s Goddard Space Flight Center, Astrophysics Science Division, Code 663, Greenbelt, MD 20771 (United States)

2016-08-01

Relativistic jets are the most energetic manifestation of the active galactic nucleus (AGN) phenomenon. AGN jets are observed from the radio through gamma-rays and carry copious amounts of matter and energy from the sub-parsec central regions out to the kiloparsec and often megaparsec scale galaxy and cluster environs. While most spatially resolved jets are seen in the radio, an increasing number have been discovered to emit in the optical/near-IR and/or X-ray bands. Here we discuss a spectacular example of this class, the 3C 111 jet, housed in one of the nearest, double-lobed FR II radio galaxies known. We discuss new, deep Chandra and Hubble Space Telescope ( HST ) observations that reveal both near-IR and X-ray emission from several components of the 3C 111 jet, as well as both the northern and southern hotspots. Important differences are seen between the morphologies in the radio, X-ray, and near-IR bands. The long (over 100 kpc on each side), straight nature of this jet makes it an excellent prototype for future, deep observations, as it is one of the longest such features seen in the radio, near-IR/optical, and X-ray bands. Several independent lines of evidence, including the X-ray and broadband spectral shape as well as the implied velocity of the approaching hotspot, lead us to strongly disfavor the EC/CMB model and instead favor a two-component synchrotron model to explain the observed X-ray emission for several jet components. Future observations with NuSTAR , HST , and Chandra will allow us to further constrain the emission mechanisms.

X-ray doppler velocimetry for diagnosis of fluid motion in ICF implosions

Science.gov (United States)

Koch, J. A.; King, J. A.; Huffman, E.; Freeman, R. R.; Dutra, E. C.; Field, J. E.; Kilkenny, J. D.; Hall, G. N.; Harding, E.; Rochau, G. A.; Porter, J. L.; Covington, A. M.; Beg, F. N.

2017-08-01

We are developing a novel diagnostic for measurement of bulk fluid motion in materials, that is particularly applicable to very hot, x-ray emitting plasmas in the High Energy Density Physics (HEDP) regime. The X-ray Doppler Velocimetry (XDV) technique relies on monochromatic imaging in multiple x-ray energy bands near the center of an x-ray emission line in a plasma, and utilizes bent imaging crystals. Higher energy bands are preferentially sensitive to plasma moving towards the viewer, while lower energy bands are preferentially sensitive to plasma moving away from the viewer. Combining multiple images in different energy bands allows for a reconstruction of the fluid velocity field integrated along the line of sight. We review the technique, and we discuss progress towards benchmarking the technique with proof-of-principle HEDP experiments.

Convergence of valence bands for high thermoelectric performance for p-type InN

International Nuclear Information System (INIS)

Li, Hai-Zhu; Li, Ruo-Ping; Liu, Jun-Hui; Huang, Ming-Ju

2015-01-01

Band engineering to converge the bands to achieve high valley degeneracy is one of effective approaches for designing ideal thermoelectric materials. Convergence of many valleys in the valence band may lead to a high Seebeck coefficient, and induce promising thermoelectric performance of p-type InN. In the current work, we have systematically investigated the electronic structure and thermoelectric performance of wurtzite InN by using the density functional theory combined with semiclassical Boltzmann transport theory. Form the results, it can be found that intrinsic InN has a large Seebeck coefficient (254 μV/K) and the largest value of Z e T is 0.77. The transport properties of p-type InN are better than that of n-type one at the optimum carrier concentration, which mainly due to the large Seebeck coefficient for p-type InN, although the electrical conductivity of n-type InN is larger than that of p-type one. We found that the larger Seebeck coefficient for p-type InN may originate from the large valley degeneracy in the valence band. Moreover, the low minimum lattice thermal conductivity for InN is one key factor to become a good thermoelectric material. Therefore, p-type InN could be a potential material for further applications in the thermoelectric area.

Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

KAUST Repository

Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong

2015-01-01

The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

KAUST Repository

Chiu, Ming-Hui

2015-07-16

The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.

Valency and type conversion in CuInSe2 with H2 plasma exposure: A photoemission investigation

International Nuclear Information System (INIS)

Nelson, A.J.; Frigo, S.P.; Rosenberg, R.

1993-01-01

The effect of H 2 plasma exposure on CuInSe 2 was studied by synchrotron radiation soft-x-ray photoemission spectroscopy. The low-power H 2 plasma was generated with a commercial electron cyclotron resonance plasma source using pure H 2 with the plasma exposure being performed at 200 degree C. In situ photoemission measurements were acquired after each plasma exposure in order to observe changes in the valence-band electronic structure as well as changes in the In 4d and Se 3d core lines. The results were correlated in order to relate changes in surface chemistry to the electronic structure. These measurements indicate that the H 2 plasma exposure type converts the CuInSe 2 surface to an n-type surface as well as converting the In +3 valency state to an In +1 valency state

X-Ray Calorimeter Arrays for Astrophysics

Science.gov (United States)

Kilbourne, Caroline A.

2009-01-01

High-resolution x-ray spectroscopy is a powerful tool for studying the evolving universe. The grating spectrometers on the XMM and Chandra satellites started a new era in x-ray astronomy, but there remains a need for instrumentation that can provide higher spectral resolution with high throughput in the Fe-K band (around 6 keV) and can enable imaging spectroscopy of extended sources, such as supernova remnants and galaxy clusters. The instrumentation needed is a broad-band imaging spectrometer - basically an x-ray camera that can distinguish tens of thousands of x-ray colors. The potential benefits to astrophysics of using a low-temperature calorimeter to determine the energy of an incident x-ray photon via measurement of a small change in temperature was first articulated by S. H. Moseley over two decades ago. In the time since, technological progress has been steady, though full realization in an orbiting x-ray telescope is still awaited. A low-temperature calorimeter can be characterized by the type of thermometer it uses, and three types presently dominate the field. The first two types are temperature-sensitive resistors - semiconductors in the metal-insulator transition and superconductors operated in the superconducting-normal transition. The third type uses a paramagnetic thermometer. These types can be considered the three generations of x-ray calorimeters; by now each has demonstrated a resolving power of 2000 at 6 keV, but only a semiconductor calorimeter system has been developed to spaceflight readiness. The Soft X-ray Spectrometer on Astro-H, expected to launch in 2013, will use an array of silicon thermistors with I-IgTe x-ray absorbers that will operate at 50 mK. Both the semiconductor and superconductor calorimeters have been implemented in small arrays, kilo-pixel arrays of the superconducting calorimeters are just now being produced, and it is anticipated that much larger arrays will require the non-dissipative advantage of magnetic thermometers.

Accurate quasiparticle calculation of x-ray photoelectron spectra of solids.

Science.gov (United States)

Aoki, Tsubasa; Ohno, Kaoru

2018-05-31

It has been highly desired to provide an accurate and reliable method to calculate core electron binding energies (CEBEs) of crystals and to understand the final state screening effect on a core hole in high resolution x-ray photoelectron spectroscopy (XPS), because the ΔSCF method cannot be simply used for bulk systems. We propose to use the quasiparticle calculation based on many-body perturbation theory for this problem. In this study, CEBEs of band-gapped crystals, silicon, diamond, β-SiC, BN, and AlP, are investigated by means of the GW approximation (GWA) using the full ω integration and compared with the preexisting XPS data. The screening effect on a deep core hole is also investigated in detail by evaluating the relaxation energy (RE) from the core and valence contributions separately. Calculated results show that not only the valence electrons but also the core electrons have an important contribution to the RE, and the GWA have a tendency to underestimate CEBEs due to the excess RE. This underestimation can be improved by introducing the self-screening correction to the GWA. The resulting C1s, B1s, N1s, Si2p, and Al2p CEBEs are in excellent agreement with the experiments within 1 eV absolute error range. The present self-screening corrected GW approach has the capability to achieve the highly accurate prediction of CEBEs without any empirical parameter for band-gapped crystals, and provide a more reliable theoretical approach than the conventional ΔSCF-DFT method.

Accurate quasiparticle calculation of x-ray photoelectron spectra of solids

Science.gov (United States)

Aoki, Tsubasa; Ohno, Kaoru

2018-05-01

It has been highly desired to provide an accurate and reliable method to calculate core electron binding energies (CEBEs) of crystals and to understand the final state screening effect on a core hole in high resolution x-ray photoelectron spectroscopy (XPS), because the ΔSCF method cannot be simply used for bulk systems. We propose to use the quasiparticle calculation based on many-body perturbation theory for this problem. In this study, CEBEs of band-gapped crystals, silicon, diamond, β-SiC, BN, and AlP, are investigated by means of the GW approximation (GWA) using the full ω integration and compared with the preexisting XPS data. The screening effect on a deep core hole is also investigated in detail by evaluating the relaxation energy (RE) from the core and valence contributions separately. Calculated results show that not only the valence electrons but also the core electrons have an important contribution to the RE, and the GWA have a tendency to underestimate CEBEs due to the excess RE. This underestimation can be improved by introducing the self-screening correction to the GWA. The resulting C1s, B1s, N1s, Si2p, and Al2p CEBEs are in excellent agreement with the experiments within 1 eV absolute error range. The present self-screening corrected GW approach has the capability to achieve the highly accurate prediction of CEBEs without any empirical parameter for band-gapped crystals, and provide a more reliable theoretical approach than the conventional ΔSCF-DFT method.

Strongly correlated electrons at high pressure: an approach by inelastic X-Ray scattering

International Nuclear Information System (INIS)

Rueff, J.P.

2007-06-01

Inelastic X-ray scattering (IXS) and associated methods has turn out to be a powerful alternative for high-pressure physics. It is an all-photon technique fully compatible with high-pressure environments and applicable to a vast range of materials. Standard focalization of X-ray in the range of 100 microns is typical of the sample size in the pressure cell. Our main aim is to provide an overview of experimental results obtained by IXS under high pressure in 2 classes of materials which have been at the origin of the renewal of condensed matter physics: strongly correlated transition metal oxides and rare-earth compounds. Under pressure, d and f-electron materials show behaviors far more complex that what would be expected from a simplistic band picture of electron delocalization. These spectroscopic studies have revealed unusual phenomena in the electronic degrees of freedom, brought up by the increased density, the changes in the charge-carrier concentration, the over-lapping between orbitals, and hybridization under high pressure conditions. Particularly we discuss about pressure induced magnetic collapse and metal-insulator transitions in 3d compounds and valence fluctuations phenomena in 4f and 5f compounds. Thanks to its superior penetration depth, chemical selectivity and resonant enhancement, resonant inelastic X-ray scattering has appeared extremely well suited to high pressure physics in strongly correlated materials. (A.C.)

Internal-strain effect on the valence band of strained silicon and its correlation with the bond angles

Energy Technology Data Exchange (ETDEWEB)

Inaoka, Takeshi, E-mail: inaoka@phys.u-ryukyu.ac.jp; Yanagisawa, Susumu; Kadekawa, Yukihiro [Department of Physics and Earth Sciences, Faculty of Science, University of the Ryukyus, 1 Senbaru, Nishihara, Okinawa 903-0213 (Japan)

2014-02-14

By means of the first-principles density-functional theory, we investigate the effect of relative atom displacement in the crystal unit cell, namely, internal strain on the valence-band dispersion of strained silicon, and find close correlation of this effect with variation in the specific bond angles due to internal strain. We consider the [111] ([110]) band dispersion for (111) ((110)) biaxial tensility and [111] ([110]) uniaxial compression, because remarkably small values of hole effective mass m* can be obtained in this dispersion. Under the practical condition of no normal stress, biaxial tensility (uniaxial compression) involves additional normal compression (tensility) and internal strain. With an increase in the internal-strain parameter, the energy separation between the highest and second-highest valence bands becomes strikingly larger, and the highest band with conspicuously small m* extends remarkably down to a lower energy region, until it intersects or becomes admixed with the second band. This is closely correlated with the change in the specific bond angles, and this change can reasonably explain the above enlargement of the band separation.

Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Wang, Qian; Cheng, Xinhong; Zheng, Li; Ye, Peiyi; Li, Menglu; Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue; Yu, Yuehui

2017-01-01

Highlights: • Composite TiAlO rather than TiO_2-Al_2O_3 laminations is deposited on 4H-SiC by PEALD. • An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC. • TiAlO offers competitive barrier heights (>1 eV) for both electrons and holes. - Abstract: Intermixing of TiO_2 with Al_2O_3 to form TiAlO films on 4H-SiC is expected to simultaneously boost the dielectric constant and achieve sufficient conduction/valence band offsets (CBO/VBO) between dielectrics and 4H-SiC. In this work, a composite TiAlO film rather than TiO_2-Al_2O_3 laminations is deposited on 4H-SiC by plasma enhanced atomic layer deposition (PEALD). X-ray photoelectron spectroscopy (XPS) is performed to systematically analyze the interfacial chemistry and energy band alignment between TiAlO and 4H-SiC. An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC during PEALD process. The VBO and CBO between TiAlO and 4H-SiC are determined to be 1.45 eV and 1.10 eV, respectively, which offer competitive barrier heights (>1 eV) for both electrons and holes and make it suitable for the fabrication of 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

Interfacial chemistry and energy band alignment of TiAlO on 4H-SiC determined by X-ray photoelectron spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Wang, Qian [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Cheng, Xinhong, E-mail: xh_cheng@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); Zheng, Li, E-mail: zhengli@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Ye, Peiyi; Li, Menglu [Department of Materials Science and Engineering, University of California, Los Angeles, CA, 90095 (United States); Shen, Lingyan; Li, Jingjie; Zhang, Dongliang; Gu, Ziyue [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Yu, Yuehui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System & Information Technology, Chinese Academy of Sciences, Changning Road 865, Shanghai 200050 (China)

2017-07-01

Highlights: • Composite TiAlO rather than TiO{sub 2}-Al{sub 2}O{sub 3} laminations is deposited on 4H-SiC by PEALD. • An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC. • TiAlO offers competitive barrier heights (>1 eV) for both electrons and holes. - Abstract: Intermixing of TiO{sub 2} with Al{sub 2}O{sub 3} to form TiAlO films on 4H-SiC is expected to simultaneously boost the dielectric constant and achieve sufficient conduction/valence band offsets (CBO/VBO) between dielectrics and 4H-SiC. In this work, a composite TiAlO film rather than TiO{sub 2}-Al{sub 2}O{sub 3} laminations is deposited on 4H-SiC by plasma enhanced atomic layer deposition (PEALD). X-ray photoelectron spectroscopy (XPS) is performed to systematically analyze the interfacial chemistry and energy band alignment between TiAlO and 4H-SiC. An interfacial layer composed of Ti, Si, O and C forms between TiAlO and 4H-SiC during PEALD process. The VBO and CBO between TiAlO and 4H-SiC are determined to be 1.45 eV and 1.10 eV, respectively, which offer competitive barrier heights (>1 eV) for both electrons and holes and make it suitable for the fabrication of 4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs).

The advantages of soft X-rays and cryogenic spectrometers for measuring chemical speciation by X-ray spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Drury, Owen B. [Lawrence Livermore National Laboratory, Advanced Detector Group, 7000 East Ave., L-270, Livermore, CA 94550 (United States); UC Davis, Biophysics Graduate Group, 1 Shields Ave, CA 95616 (United States); LBNL, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 92720 (United States); Friedrich, Stephan [Lawrence Livermore National Laboratory, Advanced Detector Group, 7000 East Ave., L-270, Livermore, CA 94550 (United States) and LBNL, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 92720 (United States)]. E-mail: friedrich1@llnl.gov; George, Simon J. [LBNL, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 92720 (United States); Cramer, Stephen P. [UC Davis, Biophysics Graduate Group, 1 Shields Ave, CA 95616 (United States); LBNL, Advanced Biological and Environmental X-ray Facility, 1 Cyclotron Road, MS 6-2100, Berkeley, CA 92720 (United States)

2006-04-15

We have built a 36-pixel high-resolution superconducting tunnel junction (STJ) soft X-ray spectrometer for chemical analysis of dilute metals by fluorescence-detected X-ray absorption spectroscopy (XAS) at the Advanced Light Source synchrotron. Soft X-ray absorption edges are preferred over traditional hard X-ray spectroscopy at the K-edges, since they have narrower natural linewidths and exhibit stronger chemical shifts. STJ detectors are preferred in the soft X-ray band over traditional Ge or grating spectrometers, since they have sufficient energy resolution to resolve transition metal L and M lines from light element K emission, and sufficient detection efficiency to measure the weak lines of dilute specimens within an acceptable time. We demonstrate the capabilities of our STJ spectrometer for chemical analysis with soft XAS measurements of molybdenum speciation on the Mo M{sub 4,5}-edges.

Microanalysis of iron oxidation state in iron oxides using X Ray Absorption Near Edge Structure (XANES)

Science.gov (United States)

Sutton, S. R.; Delaney, J.; Bajt, S.; Rivers, M. L.; Smith, J. V.

1993-01-01

An exploratory application of x ray absorption near edge structure (XANES) analysis using the synchrotron x ray microprobe was undertaken to obtain Fe XANES spectra on individual sub-millimeter grains in conventional polished sections. The experiments concentrated on determinations of Fe valence in a suite of iron oxide minerals for which independent estimates of the iron speciation could be made by electron microprobe analysis and x ray diffraction.

Characteristics of a molybdenum X-pinch X-ray source as a probe source for X-ray diffraction studies

International Nuclear Information System (INIS)

Zucchini, F.; Chauvin, C.; Combes, P.; Sol, D.; Loyen, A.; Roques, B.; Grunenwald, J.; Bland, S. N.

2015-01-01

X-ray emission from a molybdenum X-pinch has been investigated as a potential probe for the high pressure states made in dynamic compression experiments. Studies were performed on a novel 300 kA, 400 ns generator which coupled the load directly to a low inductance capacitor and switch combination. The X-pinch load consisted of 4 crossed molybdenum wires of 13 μm diameter, crossed at an angle of 62°. The load height was 10 mm. An initial x-ray burst generated at the wire crossing point, radiated in the soft x-ray range (hυ < 10 keV). This was followed, 2–5 ns later, by at least one harder x-ray burst (hυ > 10 keV) whose power ranged from 1 to 7 MW. Time integrated spectral measurements showed that the harder bursts were dominated by K-alpha emission; though, a lower level, wide band continuum up to at least 30 keV was also present. Initial tests demonstrated that the source was capable of driving Laue diffraction experiments, probing uncompressed samples of LiF and aluminium

Band structure and optical properties of sinusoidal superlattices: ZnSe1-xTex

International Nuclear Information System (INIS)

Yang, G.; Lee, S.; Furdyna, J. K.

2000-01-01

This paper examines the band structure and optical selection rules in superlattices with a sinusoidal potential profile. The analysis is motivated by the recent successful fabrication of high quality ZnSe 1-x Te x superlattices in which the composition x varies sinusoidally along the growth direction. Although the band alignment in the ZnSe 1-x Te x sinusoidal superlattices is staggered (type II), they exhibit unexpectedly strong photoluminescence, thus suggesting interesting optical behavior. The band structure of such sinusoidal superlattices is formulated in terms of the nearly-free-electron (NFE) approximation, in which the superlattice potential is treated as a perturbation. The resulting band structure is unique, characterized by a single minigap separating two wide, free-electron-like subbands for both electrons and holes. Interband selection rules are derived for optical transitions involving conduction and valence-band states at the superlattice Brillouin-zone center, and at the zone edge. A number of transitions are predicted due to wave-function mixing of different subband states. It should be noted that the zone-center and zone-edge transitions are especially easy to distinguish in these superlattices because of the large width of the respective subbands. The results of the NFE approximation are shown to hold surprisingly well over a wide range of parameters, particularly when the period of the superlattice is short. (c) 2000 The American Physical Society

X-ray Measurements of Black Hole X-ray Binary Source GRS 1915+ ...

Indian Academy of Sciences (India)

tribpo

March 30th, 1997 during a quiescent phase of the source. .... The field of view ... tagged with a 25µsec resolution and transmitted to ground on a 40 Kbit PCM/FM ... only composite model fits for the soft and hard X ray band are used and the ...

Dynamics of Impurity and Valence Bands in Ga1-xMnxAs Within the Dynamical Mean-Field Approximation

International Nuclear Information System (INIS)

Majidi, M.A.; Moreno, Juana; Jarrell, Mark; Fishman, Randy Scott; Aryanpour, K.A.

2006-01-01

We calculate the density-of-states and the spectral function of Ga 1-x Mn x As within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasiparticle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling J c at a Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

Glancing angle x-ray studies of oxide films

International Nuclear Information System (INIS)

Davenport, A.J.; Isaacs, H.S.

1989-01-01

High brightness synchrotron radiation incident at glancing angles has been used to study inhibiting species present in low concentrations in oxide films on aluminum. Glancing incident angle fluorescence measurements give surface-sensitive information on the valence state of elements from the shape of the x-ray absorption edge. Angle-resolved measurements show the depth distribution of the species present. 15 refs., 4 figs

Sulfur L{sub 2,3} soft-x-ray fluorescence of CdS and ZnS

Energy Technology Data Exchange (ETDEWEB)

Zhou, L.; Callcott, T.A.; Jia, J.J. [Univ. of Tennessee, Knoxville, TN (United States)] [and others

1997-04-01

The II-VI sulfur compounds CdS and ZnS have important electro-optics applications. In addition, they have well characterized and relatively simple structures so that they are good candidates for theoretical model development in solid-state physics. Some experimental results on density of states have been reported, mostly determined from photoemission measurements, and theoretical calculations are available for both materials. Nevertheless the electronic properties of these elements are still not completely understood. It has been established that the d-bands, derived from Cd or Zn, lie in a subband gap between a lower valence band (LVB) derived from the S 3s orbital and an upper valence band (UVB) derived from the 3p states of S and the 4(3)s states of Cd(Zn). The locations of these bands within the gap disagree with the best available calculations, however. The principal problem is that experimental photoemission measurements locate the d-bands about 2 eV lower in the band gap than the best available calculations. Some authors argue that the hole in the d-band in the final state of the photoemission process increases the binding of the d-electrons. In any case, band gaps, band widths and the precise location of d-bands are important parameters for comparing experiment and theory, and no current calculations give good agreement with all of these parameters. Moreover, photoemission data does not adequately define all of these experimental parameters, because the d-state photoemission dominates that from s and p states and sample charging effects can modify the energy of emitted electrons. The authors report photon excited soft x-ray fluorescence (SXF) S L{sub 2,3} spectra from CdS and ZnS. Using excitation between the L{sub 2} and L{sub 3} thresholds, the L{sub 2} spectrum is suppressed, which permits the authors to accurately determine features of the UVB and LVB as well as the placement of the Cd(Zn) d-bands between the UVB and LVB.

Variable Energy 2-MeV S-Band Linac for X-ray and Other Applications

International Nuclear Information System (INIS)

Howard Bender; Dave Schwellenbach; Ron Sturges; Rusty Trainham

2008-01-01

We will describe the design and operation of a compact, 2-MeV, S-band linear accelerator (linac) with variable energy tuning and short-pulse operation down to 15 ps with 100-A peak current. The design consists of a buncher cavity for short-pulse operation and two coupled resonator sections for acceleration. Single-pulse operation is accomplished through a fast injector system with a 219-MHz subharmonic buncher. The machine is intended to support a variety of applications, such as X-ray and electron beam diagnostic development and, recently, electron diffraction studies of phase transitions in shocked materials

Variable Energy 2-MeV S-Band Linac for X-ray and Other Applications

International Nuclear Information System (INIS)

H. Bender; D. Schwellenbach; R. Sturges; R. Trainham

2008-01-01

This paper describes the design and operation of a compact, 2-MeV, S-band linear accelerator (linac) with variable energy tuning and short-pulse operation down to 15 ps with 100-A peak current. The design consists of a buncher cavity for short-pulse operation and two coupled resonator sections for acceleration. Single-pulse operation is accomplished through a fast injector system with a 219-MHz subharmonic buncher. The machine is intended to support a variety of applications, such as x-ray and electron beam diagnostic development, and recently, electron diffraction studies of phase transitions in shocked materials

Black hole and neutron star soft X-ray transients: a hard X-ray view of their outbursts

International Nuclear Information System (INIS)

Yu, W.

2004-01-01

The RXTE public observations of the outbursts of black hole soft X-ray transients XTE J1550-564, XTE J1859+226, 4U 1630-47, XTE J1118+480, XTE J1650-500, and the neutron star soft X-ray transients 4U 1608-52, Aquila X-1, including a variable 'persistent' neutron star low mass X-ray binary 4U 1705-44, are summarized in this paper. The hard X-ray view of those outbursts, which is quite different from that of the soft X-ray band, suggests that there are several types of outbursts which result in different hard X-ray outburst profile - the outburst profiles are energy dependent. One type is the low/hard state outbursts, the other type is the outburst showing transitions from the low/hard state to the high/soft state, or to the intermediate or to the very high state. The later has an initial low/hard state, introducing the phenomena that the hard X-ray precedes the soft X-ray in the outburst rise. Such outbursts in XTE J1550-564, Aql X-1 and 4U 1705-44 support a two-accretion-flow model which involves one Keplerian disk flow and one sub-Keplerian flow for the initial outburst rise

X-ray absorption spectroscopy investigation of structurally modified lithium niobate crystals

International Nuclear Information System (INIS)

Vitova, Tonya

2008-02-01

The type and concentration of impurity centers in different valence states are crucial for tuning the photorefractive properties of doped Lithium Niobate (LN) crystals. X-ray Absorption Spectroscopy (XAS) is an appropriate tool for studying the local structure of impurity centers. XAS combined with absorption in UV/VIS/IR and High Resolution X-ray Emission Spectroscopy (HRXES) provide information about the valence state of the dopant ions in as-grown, reduced or oxidized doped LN crystals. Cu (Cu 1+ and Cu 2+ ) and Fe (Fe 2+ and Fe 3+ ) atoms are found in two different valence states, whereas there are indications for a third Mn valency, in addition to Mn 2+ and Mn 3+ in manganese-doped LN crystals. One of the charge compensation mechanisms during reduction of copper- doped LN crystals is outgassing of oxygen atoms. Cu ions in the reduced crystals have at least two different site symmetries: twofold (Cu 1+ ) and sixfold (Cu 2+ ) coordinated by O atoms. Fe and Mn atoms are coordinated by six O atoms. Cu and Fe ions are found to occupy only Li sites, whereas Mn ions are also incorporated into Li and Nb sites. The refractive index change in LN crystals irradiated with 3 He 2+ ions is caused by structurally disordered centers, where Nb atoms are displaced from normal crystallographic sites and Li or/and O vacancies are present. (orig.)

A quantitative study of valence electron transfer in the skutterudite compound CoP3 by combining x-ray induced Auger and photoelectron spectroscopy

International Nuclear Information System (INIS)

Diplas, S; Prytz, Oe; Karlsen, O B; Watts, J F; Taftoe, J

2007-01-01

We use the sum of the ionization and Auger energy, the so-called Auger parameter, measured from the x-ray photoelectron spectrum, to study the valence electron distribution in the skutterudite CoP 3 . The electron transfer between Co and P was estimated using models relating changes in Auger parameter values to charge transfer. It was found that each P atom gains 0.24 e - , and considering the unit formula CoP 3 this is equivalent to a donation of 0.72 e - per Co atom. This is in agreement with a recent electron energy-loss spectroscopy study, which indicates a charge transfer of 0.77 e - /atom from Co to P

MOXE: An X-ray all-sky monitor for Soviet Spectrum-X-Gamma Mission

Science.gov (United States)

Priedhorsky, W.; Fenimore, E. E.; Moss, C. E.; Kelley, R. L.; Holt, S. S.

1989-01-01

A Monitoring Monitoring X-Ray Equipment (MOXE) is being developed for the Soviet Spectrum-X-Gamma Mission. MOXE is an X-ray all-sky monitor based on array of pinhole cameras, to be provided via a collaboration between Goddard Space Flight Center and Los Alamos National Laboratory. The objectives are to alert other observers on Spectrum-X-Gamma and other platforms of interesting transient activity, and to synoptically monitor the X-ray sky and study long-term changes in X-ray binaries. MOXE will be sensitive to sources as faint as 2 milliCrab (5 sigma) in 1 day, and cover the 2 to 20 KeV band.

Hard X-ray Flux from Low-Mass Stars in the Cygnus OB2 Association

Science.gov (United States)

Caramazza, M.; Drake, J. J.; Micela, G.; Flaccomio, E.

2009-05-01

We investigate the X-ray emission in the 20-40 keV band expected from the flaring low-mass stellar population in Cygnus OB2 assuming that the observed soft X-ray emission is due to a superposition of flares and that the ratio of hard X-ray to soft X-ray emission is described by a scaling found for solar flares by Isola and co-workers. We estimate a low-mass stellar hard X-ray flux in the 20-40 keV band in the range ~7×1031-7×1033 erg/s and speculate the limit of this values. Hard X-ray emission could lie at a level not much below the current observed flux upper limits for Cygnus OB2. Simbol-X, with its broad energy band (10-100 keV) and its sensitivity should be able to detect this emission and would provide insights into the hard X-ray production of flares on pre-main sequence stars.

A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors

International Nuclear Information System (INIS)

Pietrzyk, M.A.; Kowalski, B.J.; Orlowski, B.A.; Knoff, W.; Story, T.; Dobrowolski, W.; Slynko, V.E.; Slynko, E.I.; Johnson, R.L.

2010-01-01

In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV. (authors)

The contribution of valence unstable ytterbium states into kinetic properties of YbNi2-xGe2+x and YbCu2-xSi2+x

International Nuclear Information System (INIS)

Kuzhel, B.C.; Shcherba, I.D.; Kravchenko, I.I.

2006-01-01

The intermetalic YbNi 2-x Ge 2+x (-0.25>=x>=0.25) and YbCu 2-x Si 2+x (-0.20>=x>=0.20) alloy systems (CeGa 2 Al 2 -type crystal structure) were studied by measuring X-ray absorption and diffraction at room temperatures as well as electrical resistivity and thermopower in the 4.2-300K temperature range. The temperature dependence of the contribution of valence unstable Yb ions to the total electrical resistance has been analyzed. The qualitative estimation of this contribution has been performed by utilizing the following equation:Δρ Yb (T)=ρ exp (T)-ρ YbCu 2 Ge 2 (T)-Δρ 4.2K ,where Δρ YbCu 2 Ge 2 (T) is the temperature dependence of YbCu 2 Ge 2 electrical resistance, Δρ 4.2 =ρ 4.2 (exp)-ρ 4.2 (YbCu 2 Ge 2 )

On the theory of phonoriton in cubic semiconductors with a degenerate valence band

International Nuclear Information System (INIS)

Nguyen Ai Viet; Nguyen Thi Que Huong; Le Qui Thong

1992-10-01

The ''phonoriton'' is an elementary excitation constructed from an exciton polariton and phonon in semiconductors under intense excitation by an electromagnetic wave near the exciton resonance (L.V. Keldysh and A.L. Ivanov, 1982). In this paper we develop a theory of phonoriton in direct band gap cubic semiconductor with a degenerate valence band using the simple model of J.L. Birman and B.S. Wang (1990). In addition to experimental proofs of the existence of phonoriton we propose an experiment to measure its flight time. (author). 33 refs

Band Offsets at the Interface between Crystalline and Amorphous Silicon from First Principles

Science.gov (United States)

Jarolimek, K.; Hazrati, E.; de Groot, R. A.; de Wijs, G. A.

2017-07-01

The band offsets between crystalline and hydrogenated amorphous silicon (a -Si ∶H ) are key parameters governing the charge transport in modern silicon heterojunction solar cells. They are an important input for macroscopic simulators that are used to further optimize the solar cell. Past experimental studies, using x-ray photoelectron spectroscopy (XPS) and capacitance-voltage measurements, have yielded conflicting results on the band offset. Here, we present a computational study on the band offsets. It is based on atomistic models and density-functional theory (DFT). The amorphous part of the interface is obtained by relatively long DFT first-principles molecular-dynamics runs at an elevated temperature on 30 statistically independent samples. In order to obtain a realistic conduction-band position the electronic structure of the interface is calculated with a hybrid functional. We find a slight asymmetry in the band offsets, where the offset in the valence band (0.29 eV) is larger than in the conduction band (0.17 eV). Our results are in agreement with the latest XPS measurements that report a valence-band offset of 0.3 eV [M. Liebhaber et al., Appl. Phys. Lett. 106, 031601 (2015), 10.1063/1.4906195].

Electronic structure and optical properties of Cs2HgI4: Experimental study and band-structure DFT calculations

Science.gov (United States)

Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Shkumat, P. N.; Myronchuk, G. L.; Khvyshchun, M.; Fedorchuk, A. O.; Parasyuk, O. V.; Khyzhun, O. Y.

2015-04-01

High-quality single crystal of cesium mercury tetraiodide, Cs2HgI4, has been synthesized by the vertical Bridgman-Stockbarger method and its crystal structure has been refined. In addition, electronic structure and optical properties of Cs2HgI4 have been studied. For the crystal under study, X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces have been measured. The present X-ray photoelectron spectroscopy (XPS) results indicate that the Cs2HgI4 single crystal surface is very sensitive with respect to Ar+ ion-irradiation. In particular, Ar+ bombardment of the single crystal surface alters the elemental stoichiometry of the Cs2HgI4 surface. To elucidate peculiarities of the energy distribution of the electronic states within the valence-band and conduction-band regions of the Cs2HgI4 compound, we have performed first-principles band-structure calculations based on density functional theory (DFT) as incorporated in the WIEN2k package. Total and partial densities of states for Cs2HgI4 have been calculated. The DFT calculations reveal that the I p states make the major contributions in the upper portion of the valence band, while the Hg d, Cs p and I s states are the dominant contributors in its lower portion. Temperature dependence of the light absorption coefficient and specific electrical conductivity has been explored for Cs2HgI4 in the temperature range of 77-300 K. Main optical characteristics of the Cs2HgI4 compound have been elucidated by the first-principles calculations.

Manganese L-edge X-ray absorption spectroscopy of manganese catalase from Lactobacillus plantarum and mixed valence manganese complexes

Energy Technology Data Exchange (ETDEWEB)

Grush, M.M.; Chen, J.; George, S.J. [Univ. of California, Davis, CA (United States)] [and others

1996-01-10

The first Mn L-edge absorption spectra of a Mn metalloprotein are presented in this paper. Both reduced and superoxidized Mn catalase have been examined by fluorescence-detected soft X-ray absorption spectroscopy, and their Mn L-edge spectra are dramatically different. The spectrum of reduced Mn(II)Mn(II) catalase has been interpreted by ligand field atomic multiplet calculations and by comparison to model compound spectra. The analysis finds a 10 Dq value of nearly 1.1 eV, consistent with coordination by predominately nitrogen and oxygen donor ligands. For interpretation of mixed valence Mn spectra, an empirical simulation procedure based on the addition of homovalent model compound spectra has been developed and was tested on a variety of Mn complexes and superoxidized Mn catalase. This routine was also used to determine the oxidation state composition of the Mn in [Ba{sub 8}Na{sub 2}ClMn{sub 16}(OH){sub 8}(CO{sub 3}){sub 4}L{sub 8}] .53 H{sub 2}O (L=1,3-diamino-2-hydroxypropane-N,N,N`N`-tetraacetic acid). 27 refs., 6 figs.

Electronic structure of the Ga1-xCr xN studied by high-energy photoemission spectroscopy

International Nuclear Information System (INIS)

Kim, J.J.; Makino, H.; Yao, T.; Takata, Y.; Kobayashi, K.; Yamamoto, T.; Hanada, T.; Cho, M.W.; Ikenaga, E.; Yabashi, M.; Miwa, D.; Nishino, Y.; Tamasaku, K.; Ishikawa, T.; Shin, S.

2005-01-01

Valence band spectra of Ga 1-x Cr x N have been investigated by high-energy photoemission spectroscopy at the photon energy of 5.95 keV. Cr doping does introduce a novel electronic structure in the bandgap and causes some change in valence band structure. Based on the first-principle calculation, Cr-associated electronic levels in the bandgap are assigned to nonbonding and antibonding d states while the change of the valence band suggests that the Ga 4s originated states are significantly modified through hybridization with the Cr 3d orbital. The present result evidences that the Ga valence electrons are considerably modified through the interaction with the second nearest-neighbour Cr atoms

Temperature-induced band shift in bulk γ-InSe by angle-resolved photoemission spectroscopy

Science.gov (United States)

Xu, Huanfeng; Wang, Wei; Zhao, Yafei; Zhang, Xiaoqian; Feng, Yue; Tu, Jian; Gu, Chenyi; Sun, Yizhe; Liu, Chang; Nie, Yuefeng; Edmond Turcu, Ion C.; Xu, Yongbing; He, Liang

2018-05-01

Indium selenide (InSe) has recently become popular research topics because of its unique layered crystal structure, direct band gap and high electron mobilities. In this work, we have acquired the electronic structure of bulk γ-InSe at various temperatures using angle-resolved photoemission spectroscopy (ARPES). We have also found that as the temperature decreases, the valence bands of γ-InSe exhibit a monotonic shift to lower binding energies. This band shift is attributed to the change of lattice parameters and has been validated by variable temperature X-ray diffraction measurements and theoretical calculations.

Reflectivity around the gold L-edges of X-ray reector of the soft X-ray telescope onboard ASTRO-H

DEFF Research Database (Denmark)

Maeda, Yoshitomo; Kikuchi, Naomichi; Kurashima, Sho

2017-01-01

We report the atomic scattering factor in the 11.2-15.4 keV for the ASTRO-H Soft X-ray Telescope (SXT)9 obtained in the ground based measurements. The large effective area of the SXT covers above 10 keV. In fact, the flight data show the spectra of the celestical objects in the hard X-ray band. I...

Electronic structure of human hemoglobin: ultrasoft X-ray emission study

International Nuclear Information System (INIS)

Soldatov, A.V.; Kravtsova, A.N.; Fedorovich, E.N.; Kurmaev, E.Z.; Moewes, A.

2004-01-01

Full text: The iron L 2,3 and carbon, nitrogen and oxygen Kα X-ray emission spectra (XES) of human hemoglobin have been recorded at the soft X-ray spectroscopy endstation on Undulator Beam line 8.0 at Advanced Light Source (ALS) located at the Lawrence Berkeley National Laboratory. The theoretical calculations of Fe L 3 -XES have been performed using ab initio code FEFF8.2. The calculations have been carried out for the structure of hemoglobin presented in PDB (entry 3HHB) as well as for the molecule with symmetrical heme plane. It was found that the Fe L 3 emission spectrum calculated for the ideal molecule agrees slightly better with the experiment as compared with those calculated for the real molecule. Thus, one can use the structure of the ideal molecule for theoretical Fe L 3 -XES simulations. The theoretical analysis has shown that the fist peak of experimental Fe L 3 - emission spectrum is enhanced by the nearest nitrogen atoms lying in heme plane around the central iron atom. The theoretical C K- and N K-XES spectra of hemoglobin have been calculated. A good agreement between theoretical and experimental spectra has been obtained. The distribution of the partial electronic densities of states in the valence and conduction bands of hemoglobin has been determined

Hard X-ray measurements of A0535+26 during low state

International Nuclear Information System (INIS)

Polcaro, V.F.; Bazzano, A.; La Padula, C.; Ubertini, P.; Vialetto, G.

1982-01-01

A number of measurements of the recurrent transient X-ray source A0535+26 have been made during its outburst phase, since its detection in 1975 by Ariel V. The optical counterpart of the source (Be Star 245770) has also been extensively studied both in active and quiescent state in optical I.R. and U.V. bands. These data show a positive correlation with the X-ray flux during on state. The X-ray flux from the source during the outburst increases to about twice the Crab intensity in soft X-ray band and gradually decreases to 100 mCrab during 30 to 50 days. However positive detection of the sources has not been reported until now during the low state. In this paper we present the spectral measurements of the source in the energy band 20-100 KeV made during the low state in 1981. (orig.)

Persistence of Mixed and Non-intermediate Valence in the High-Pressure Structure of Silver(I,III) Oxide, AgO: A Combined Raman, X-ray Diffraction (XRD), and Density Functional Theory (DFT) Study.

Science.gov (United States)

Grzelak, Adam; Gawraczyński, Jakub; Jaroń, Tomasz; Somayazulu, Maddury; Derzsi, Mariana; Struzhkin, Viktor; Grochala, Wojciech

2017-05-15

The X-ray diffraction data collected up to ca. 56 GPa and the Raman spectra measured up to 74.8 GPa for AgO, or Ag I Ag III O 2 , which is a prototypical mixed valence (disproportionated) oxide, indicate that two consecutive phase transitions occur: the first-order phase transition occurs between 16.1 GPa and 19.7 GPa, and a second-order phase transition occurs at ca. 40 GPa. All polymorphic forms host the square planar [Ag III O 4 ] units typical of low-spin Ag III . The disproportionated Imma form persists at least up to 74.8 GPa, as indicated by Raman spectra. Theoretical hybrid density functional theory (DFT) calculations show that the first-order transition is phonon-driven. AgO stubbornly remains disproportionated up to at least 100 GPa-in striking contrast to its copper analogue-and the fundamental band gap of AgO is ∼0.3 eV at this pressure and is weakly pressure-dependent. Metallization of AgO is yet to be achieved.

16O + 16O + valence neutrons in molecular orbitals structures of positive- and negative-parity superdeformed bands in 34S

International Nuclear Information System (INIS)

Taniguchi, Yasutaka

2015-01-01

The structures of superdeformed (SD) states in 34 S have been investigated using the antisymmetrized molecular dynamics and generator coordinate method (GCM). The GCM basis wave functions are calculated via energy variation with a constraint on the quadrupole deformation parameter β. By applying the GCM after parity and angular momentum projections, the coexistence of two positive- and one negative-parity SD bands are predicted, and low-lying states and other deformed bands are obtained. The SD bands have structures of 16 O + 16 O + two valence neutrons in molecular orbitals around the two 16 O cores in a cluster picture. The configurations of the two valence neutrons are δ 2 and π 2 for the positive-parity SD bands and π 1 δ 1 for the negative-parity SD band. (author)

16O + 16O + valence neutrons in molecular orbitals structures of positive- and negative-parity superdeformed bands in 34S

International Nuclear Information System (INIS)

Taniguchi, Yasutaka

2014-01-01

The structures of superdeformed (SD) states in 34 S are investigated using the antisymmetrized molecular dynamics and generator coordinate method (GCM). The GCM basis wave functions are calculated via energy variation with a constraint on the quadrupole deformation parameter β. By applying the GCM after parity and angular momentum projections, the coexistence of two positive- and one negative-parity SD bands are predicted, and low-lying states and other deformed bands are obtained. The SD bands have structures of 16 O + 16 O + two valence neutrons in molecular orbitals around the two 16 O cores in a cluster picture. The configurations of the two valence neutrons are δ 2 and π 2 for the positive-parity SD bands and π 1 δ 1 for the negative-parity SD band

X-ray absorption and emission studies of diamond nanoparticles

International Nuclear Information System (INIS)

Van Buuren, T.; Willey, T.; Raty, J.Y.; Galli, G.; Terminello, L.J.; Bostedt, C.

2004-01-01

Full text: A new family of carbon nanopaticles produced in detonations, are found to have a core of diamond with a coating fullerene- like carbon. X-ray diffraction and TEM show that the nanodiamond powder is crystalline and approximately 4 nm in diameter. These nano-sized diamonds do not display the characteristic property of other group IV nanoparticles: a strong widening of the energy gap between the conduction and valence bands owing to quantum-confinement effects. For nano-sized diamond with a size distribution of 4 nm, there is no shift of the band energies relative to bulk diamond. Although the C1s core exciton feature clearly observed in the K-edge absorption edge of bulk diamond is shifted and broadening due to increased overlap of the excited electron with the core holein the small particle. Also the depth of the second gap in the nanodiamond spectra is shallower than that of bulk diamond. A feature at lower energy in the X-ray absorption spectra that is not present in the bulk samples is consistent with a fullerene like surface reconstruction. By exposing the diamond nanoparticles to an Argon /Oxygen plasma then annealing in a UHV environment we have obtained a hydrogen free surface. The nanodiamonds processed in this manner show an increase fullerene type contribution in the carbon x-ray absorption pre-edge. High spatial resolution EELS measurements of the empty states of a single nanodiamond particle acquired with a ld emission TEM also show the core of the particle is bulk diamond like where as the surface has a fullerene like structure. Standard density-functional calculations on clusters in which the diamond surface bonds are terminated with hydrogen atoms, show that the bandgap begins to increase above the bulk value only for clusters smaller than 1 nm. Surface hydrogen atoms are found to be about as close as they do in molecular hydrogen and can escape as H 2 , forcing the respective carbon atoms to rearrange. A series of such rearrangements can

Size and alloying induced shift in core and valence bands of Pd-Ag and Pd-Cu nanoparticles

International Nuclear Information System (INIS)

Sengar, Saurabh K.; Mehta, B. R.; Govind

2014-01-01

In this report, X-ray photoelectron spectroscopy studies have been carried out on Pd, Ag, Cu, Pd-Ag, and Pd-Cu nanoparticles having identical sizes corresponding to mobility equivalent diameters of 60, 40, and 20 nm. The nanoparticles were prepared by the gas phase synthesis method. The effect of size on valence and core levels in metal and alloy nanoparticles has been studied by comparing the values to those with the 60 nm nanoparticles. The effect of alloying has been investigated by comparing the valence and core level binding energies of Pd-Cu and Pd-Ag alloy nanoparticles with the corresponding values for Pd, Ag, and Cu nanoparticles of identical sizes. These effects have been explained in terms of size induced lattice contractions, alloying induced charge transfer, and hybridization effects. The observation of alloying and size induced binding energy shifts in bimetallic nanoparticles is important from the point of view of hydrogen reactivity

Detection of soft X-rays from α Lyrae and eta Bootis with an imaging X-ray telescope

International Nuclear Information System (INIS)

Topka, K.; Fabricant, D.; Harnden, F.R. Jr.; Gorenstein, P.; Rosner, R.

1979-01-01

Two nearby stars have been detected in the soft X-ray band with an imaging X-ray telescope flown aboard two sounding rockets. The exposure times were 4.8 and 4.5 s for the images of the AO V star α Lyrae (Vega) and the GO IV star eta Bootis, respectively. Laboratory measurements rule out the possibility that the observed signals were due to UV contamination. These X-ray observations imply luminosities of L/sub X/(0.2--0.8 keV) approx. =3 x 10 28 ergs s -1 for Vega and L/sub X/(0.15--1.5 keV) approx. =1 x 10 29 ergs s -1 for eta Boo. A coronal interpretation of the X-rays from Vega is in serious conflict with simple convective models for early-type main-sequence stars. Magnetic field activity may be responsible for heating the corona, as has been suggested for the Sun. In the case of eta Boo, a coronal interpretation is also favored; however, if the unseen companion of eta Boo is degenerate, the X-ray emission may instead originate in a stellar wind accreting upon a white dwarf or neutron star

Soft X-ray radiation damage in EM-CCDs used for Resonant Inelastic X-ray Scattering

Science.gov (United States)

Gopinath, D.; Soman, M.; Holland, A.; Keelan, J.; Hall, D.; Holland, K.; Colebrook, D.

2018-02-01

Advancement in synchrotron and free electron laser facilities means that X-ray beams with higher intensity than ever before are being created. The high brilliance of the X-ray beam, as well as the ability to use a range of X-ray energies, means that they can be used in a wide range of applications. One such application is Resonant Inelastic X-ray Scattering (RIXS). RIXS uses the intense and tuneable X-ray beams in order to investigate the electronic structure of materials. The photons are focused onto a sample material and the scattered X-ray beam is diffracted off a high resolution grating to disperse the X-ray energies onto a position sensitive detector. Whilst several factors affect the total system energy resolution, the performance of RIXS experiments can be limited by the spatial resolution of the detector used. Electron-Multiplying CCDs (EM-CCDs) at high gain in combination with centroiding of the photon charge cloud across several detector pixels can lead to sub-pixel spatial resolution of 2-3 μm. X-ray radiation can cause damage to CCDs through ionisation damage resulting in increases in dark current and/or a shift in flat band voltage. Understanding the effect of radiation damage on EM-CCDs is important in order to predict lifetime as well as the change in performance over time. Two CCD-97s were taken to PTB at BESSY II and irradiated with large doses of soft X-rays in order to probe the front and back surfaces of the device. The dark current was shown to decay over time with two different exponential components to it. This paper will discuss the use of EM-CCDs for readout of RIXS spectrometers, and limitations on spatial resolution, together with any limitations on instrument use which may arise from X-ray-induced radiation damage.

X-ray absorption spectroscopy investigation of structurally modified lithium niobate crystals

Energy Technology Data Exchange (ETDEWEB)

Vitova, Tonya

2008-02-15

The type and concentration of impurity centers in different valence states are crucial for tuning the photorefractive properties of doped Lithium Niobate (LN) crystals. X-ray Absorption Spectroscopy (XAS) is an appropriate tool for studying the local structure of impurity centers. XAS combined with absorption in UV/VIS/IR and High Resolution X-ray Emission Spectroscopy (HRXES) provide information about the valence state of the dopant ions in as-grown, reduced or oxidized doped LN crystals. Cu (Cu{sup 1+} and Cu{sup 2+}) and Fe (Fe{sup 2+} and Fe{sup 3+}) atoms are found in two different valence states, whereas there are indications for a third Mn valency, in addition to Mn{sup 2+} and Mn{sup 3+} in manganese-doped LN crystals. One of the charge compensation mechanisms during reduction of copper- doped LN crystals is outgassing of oxygen atoms. Cu ions in the reduced crystals have at least two different site symmetries: twofold (Cu{sup 1+}) and sixfold (Cu{sup 2+}) coordinated by O atoms. Fe and Mn atoms are coordinated by six O atoms. Cu and Fe ions are found to occupy only Li sites, whereas Mn ions are also incorporated into Li and Nb sites. The refractive index change in LN crystals irradiated with {sup 3}He{sup 2+} ions is caused by structurally disordered centers, where Nb atoms are displaced from normal crystallographic sites and Li or/and O vacancies are present. (orig.)

The X-ray Variability of Eta Car, 1996-2010

Science.gov (United States)

Corcoran, Michael F.; Hamaguchi, K.; Gull, T.; Owocki, S.; Pittard, J.

2010-01-01

X-ray photometry in the 2-10 keY band of the the supermassive binary star Eta Car has been measured with the Rossi X-ray Timing Explorer from 1996-2010. The ingress to X-ray minimum is consistent with a period of 2024 days. The 2009 X-ray minimum began on January 162009 and showed an unexpectedly abrupt recovery starting after 12 Feb 2009. The X-ray colors become harder about half-way through all three minima and continue until flux recovery. The behavior of the fluxes and X-ray colors for the most recent X-ray minimum, along with Chandra high resolution grating spectra at key phases suggests a significant change in the inner wind of Eta Car, a possible indicator that the star is entering a new unstable phase of mass loss.

Perspectives of the lobster-eye telescope: The promising types of cosmic X-ray sources

Science.gov (United States)

Šimon, V.

2017-07-01

We show the astrophysical aspects of observing the X-ray sky with the planned lobster-eye telescope. This instrument is important because it is able to provide wide-field X-ray imaging. For the testing observations, we propose to include also X-ray binaries in which matter transfers onto the compact object (mostly the neutron star). We show the typical features of the long-term X-ray activity of such objects. Observing in the soft X-ray band is the most promising because their X-ray intensity is the highest in this band. Since these X-ray sources tend to concentrate toward the center of our Galaxy, several of them can be present in the field of view of the tested instrument.

Complex optical/UV and X-ray variability of the Seyfert 1 galaxy 1H 0419-577

Science.gov (United States)

Pal, Main; Dewangan, Gulab C.; Kembhavi, Ajit K.; Misra, Ranjeev; Naik, Sachindra

2018-01-01

We present detailed broad-band UV/optical to X-ray spectral variability of the Seyfert 1 galaxy 1H 0419-577 using six XMM-Newton observations performed during 2002-2003. These observations covered a large amplitude variability event in which the soft X-ray (0.3-2 keV) count rate increased by a factor of ∼4 in six months. The X-ray spectra during the variability are well described by a model consisting of a primary power law, blurred and distant reflection. The 2-10 keV power-law flux varied by a factor of ∼7 while the 0.3-2 keV soft X-ray excess flux derived from the blurred reflection component varied only by a factor of ∼2. The variability event was also observed in the optical and UV bands but the variability amplitudes were only at the 6-10 per cent level. The variations in the optical and UV bands appear to follow the variations in the X-ray band. During the rising phase, the optical bands appear to lag behind the UV band but during the declining phase, the optical bands appear to lead the UV band. Such behaviour is not expected in the reprocessing models where the optical/UV emission is the result of reprocessing of X-ray emission in the accretion disc. The delayed contribution of the broad emission lines in the UV band or the changes in the accretion disc/corona geometry combined with X-ray reprocessing may give rise to the observed behaviour of the variations.

Kaolinite: Defect defined material properties – A soft X-ray and first principles study of the band gap

Energy Technology Data Exchange (ETDEWEB)

Pietzsch, A., E-mail: annette.pietzsch@helmholtz-berlin.de [Institute for Methods and Instrumentation in Synchrotron Radiation Research G-ISRR, Helmholtz-Zentrum für Materialien und Energie GmbH, Albert-Einstein-Str. 15, 12489 Berlin (Germany); Nisar, J. [Pakistan Atomic Energy Commission (PAEC), P.O. Box 2151, Islamabad (Pakistan); Jämstorp, E. [Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen PSI (Switzerland); Gråsjö, J. [Department of Pharmacy, Uppsala University, Box 580, 75123 Uppsala (Sweden); Århammar, C. [Coromant R& D, S-126 80 Stockholm (Sweden); Ahuja, R.; Rubensson, J.-E. [Department of Physics and Astronomy, Uppsala University, Box 516, 751 20 Uppsala (Sweden)

2015-07-15

Highlights: • The respective electronic structure of synthetic and natural kaolinite is compared. • The size of the band gap and thus many important material properties are defined by defect states in the band gap. • The oxygen-based defect states are identified and analyzed. • The band gap of kaolinite decreases significantly due to the forming of defects. - Abstract: By combining X-ray absorption spectroscopy and first principles calculations we have determined the electronic structure of synthetic and natural kaolinite as a model system for engineered and natural clay materials. We have analyzed defect states in the band gap and find that both natural and synthetic kaolinite contain defects where oxygen replaces hydrogen in one of the Al (0 0 1)-hydroxyl groups of the kaolinite clay sheets. The band gap of both synthetic and natural kaolinite is found to decrease by about 3.2 eV as this defect is formed.

Kaolinite: Defect defined material properties – A soft X-ray and first principles study of the band gap

International Nuclear Information System (INIS)

Pietzsch, A.; Nisar, J.; Jämstorp, E.; Gråsjö, J.; Århammar, C.; Ahuja, R.; Rubensson, J.-E.

2015-01-01

Highlights: • The respective electronic structure of synthetic and natural kaolinite is compared. • The size of the band gap and thus many important material properties are defined by defect states in the band gap. • The oxygen-based defect states are identified and analyzed. • The band gap of kaolinite decreases significantly due to the forming of defects. - Abstract: By combining X-ray absorption spectroscopy and first principles calculations we have determined the electronic structure of synthetic and natural kaolinite as a model system for engineered and natural clay materials. We have analyzed defect states in the band gap and find that both natural and synthetic kaolinite contain defects where oxygen replaces hydrogen in one of the Al (0 0 1)-hydroxyl groups of the kaolinite clay sheets. The band gap of both synthetic and natural kaolinite is found to decrease by about 3.2 eV as this defect is formed

Start of Eta Car's X-ray Minimum

Science.gov (United States)

Corcoran, Michael F.; Liburd, Jamar; Hamaguchi, Kenji; Gull, Theodore; Madura, Thomas; Teodoro, Mairan; Moffat, Anthony; Richardson, Noel; Russell, Chris; Pollock, Andrew;

CLASSIFYING X-RAY BINARIES: A PROBABILISTIC APPROACH

International Nuclear Information System (INIS)

Gopalan, Giri; Bornn, Luke; Vrtilek, Saeqa Dil

2015-01-01

In X-ray binary star systems consisting of a compact object that accretes material from an orbiting secondary star, there is no straightforward means to decide whether the compact object is a black hole or a neutron star. To assist in this process, we develop a Bayesian statistical model that makes use of the fact that X-ray binary systems appear to cluster based on their compact object type when viewed from a three-dimensional coordinate system derived from X-ray spectral data where the first coordinate is the ratio of counts in the mid- to low-energy band (color 1), the second coordinate is the ratio of counts in the high- to low-energy band (color 2), and the third coordinate is the sum of counts in all three bands. We use this model to estimate the probabilities of an X-ray binary system containing a black hole, non-pulsing neutron star, or pulsing neutron star. In particular, we utilize a latent variable model in which the latent variables follow a Gaussian process prior distribution, and hence we are able to induce the spatial correlation which we believe exists between systems of the same type. The utility of this approach is demonstrated by the accurate prediction of system types using Rossi X-ray Timing Explorer All Sky Monitor data, but it is not flawless. In particular, non-pulsing neutron systems containing “bursters” that are close to the boundary demarcating systems containing black holes tend to be classified as black hole systems. As a byproduct of our analyses, we provide the astronomer with the public R code which can be used to predict the compact object type of XRBs given training data

Universality class of non-Fermi liquid behaviour in mixed valence systems

International Nuclear Information System (INIS)

Zhang Guangming; Su Zhaobin; Lu Yu

1995-11-01

A generalized Anderson single-impurity model with off-site Coulomb interactions is derived from the extended three-band Hubbard model, originally proposed to describe the physics of the copper-oxides. Using the abelian bosonization technique and canonical transformations, an effective Hamiltonian is derived in the strong coupling limit, which is essentially analogous to the Toulouse limit of the ordinary Kondo problem. In this limit, the effective Hamiltonian can be exactly solved, with a mixed valence quantum critical point separating two different Fermi liquid phases, i.e. the Kondo phase and the empty orbital phase. In the mixed valence quantum critical regime, the local moment is only partially quenched and X-ray edge singularities are generated. Around the quantum critical point, a new type of non-Fermi liquid behaviour is predicted with an extra specific heat C imp ∼ T 1/4 and a singular spin-susceptibility χ imp ∼ T -3/4 . At the same time, the effective Hamiltonian under single occupancy is transformed into a resonant-level model, from which the correct Kondo physical properties (specific heat, spin susceptibility, and an enhanced Wilson ratio) are easily rederived. Finally, a brief discussion is given to relate these theoretical results to observations in U Pd x Cu 5-x (x=1, 1.5) alloys, which show single-impurity critical behaviour consistent with our predictions. (author). 30 refs

X-ray spectroscopy of solids under pressure. Annual progress report, August 1983-July 1984

International Nuclear Information System (INIS)

Ingalls, R.L.

1984-01-01

X-ray absorption studies of several materials as a function of pressure have been performed. Of particular interest has been the EXAFS (extended x-ray absorption fine structure) and XANES (x-ray absorption near edge structure). Materials studied include the alkali halides, NaBr and RbCl, zinc blend semiconductors ZnSe and CuBr and mixed-valence materials SmS and SmSe. In the former, the volume dependence of bond lengths and their mean square fluctuations were determined from the EXAFS. In the latter materials the XANES exhibited the pressure induced change from the Sm 2+ configuration to Sm 3+

Instanton contributions to the valence band of the double Sine-Gordon potential

International Nuclear Information System (INIS)

Ricotta, R.M.; Escobar, C.O.

1982-01-01

The energy dispersion relation for the valence band of the double sine-Gordon potential is calculated, approximating the tunneling amplitude by a sum of contributions of multi-instantons and anti-instatons trajectories. The interesting feature of this potential is that they have to deal with two types of instantons, as there are two different potential barriers within one period of the potential. The results with the standard WKB approximation are compared. (Author) [pt

High resolution X-ray emission spectroscopy: An advanced tool for actinide research

Science.gov (United States)

Vitova, T.; Brendebach, B.; Dardenne, K.; Denecke, M. A.; Lebid, A.; Löble, M.; Rothe, J.; Batuk, O. N.; Hormes, J.; Liu, D.; Breher, F.; Geckeis, H.

2010-03-01

High resolution X-ray emission spectroscopy (HRXES) is becoming increasingly important for our understanding of electronic and coordination structures. The combination of such information with development of quantum theoretical tools will advance our capability for predicting reactivity and physical behavior especially of 5f elements. HRXES can be used to remove lifetime broadening by registering the partial fluorescence yield emitted by the sample (i.e., recording a windowed signal from the energy dispersed fluorescence emission while varying incident photon energy), thereby yielding highly resolved X-ray absorption fine structure (XAFS) spectra. Such spectra often display resonant features not observed in conventional XAFS. The spectrometer set-up can also be used for a wide range of other experiments, for example, resonant inelastic X-ray scattering (RIXS), where bulk electron configuration information in solids, liquids and gases is obtained. Valence-selective XAFS studies, where the local structure of a selected element's valence state present in a mixture of valence states can be obtained, as well as site-selective XAFS studies, where the coordination structure of a metal bound to selected elements can be differentiated from that of all the other ligating atoms. A HRXES spectrometer has been constructed and is presently being commissioned for use at the INE-Beamline for actinide research at the synchrotron source ANKA at FZK. We present the spectrometer's compact, modular design, optimized for attaining a wide range of energies, and first test measurement results. Examples from HRXES studies of lanthanides, actinides counter parts, are also shown.

Valence band photoemission from in-situ grown GaAs(100)-c(4 x 4)

Czech Academy of Sciences Publication Activity Database

Jiříček, Petr; Cukr, Miroslav; Bartoš, Igor; Adell, M.; Strasser, T.; Schattke, W.

2006-01-01

Roč. 56, č. 1 (2006), s. 21-26 ISSN 0011-4626. [Symposium on Surface Physics /10./. Praha, 11.07.2005-15.07.2005] R&D Projects: GA ČR(CZ) GA202/04/0994 Institutional research plan: CEZ:AV0Z10100521 Keywords : GaAs(100)-c(4X4) * surface states * band structure * structure plot Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.568, year: 2006

An Expanded Rossi X-Ray Timing Explorer Survey of X-Ray Variability in Seyfert 1 Galaxies

Science.gov (United States)

Markowitz, A.; Edelson, R.

2004-12-01

The first seven years of RXTE monitoring of Seyfert 1 active galactic nuclei have been systematically analyzed to yield five homogeneous samples of 2-12 keV light curves, probing hard X-ray variability on successively longer durations from ~1 day to ~3.5 yr. The 2-10 keV variability on timescales of ~1 day, as probed by ASCA, is included. All sources exhibit stronger X-ray variability toward longer timescales, but the increase is greater for relatively higher luminosity sources. Variability amplitudes are anticorrelated with X-ray luminosity and black hole mass, but amplitudes saturate and become independent of luminosity or black hole mass toward the longest timescales. The data are consistent with the models of power spectral density (PSD) movement described by Markowitz and coworkers and McHardy and coworkers, whereby Seyfert 1 galaxies' variability can be described by a single, universal PSD shape whose break frequency scales with black hole mass. The best-fitting scaling relations between variability timescale, black hole mass, and X-ray luminosity imply an average accretion rate of ~5% of the Eddington limit for the sample. Nearly all sources exhibit stronger variability in the relatively soft 2-4 keV band compared to the 7-12 keV band on all timescales. There are indications that relatively less luminous or less massive sources exhibit a greater degree of spectral variability for a given increase in overall flux.

X-ray photoemission spectroscopy investigation of CaTiO3:Eu for luminescence property: effect of Eu3+ ion

International Nuclear Information System (INIS)

Wang, Kaichen; Zhao, Baijun; Gao, Lu

2016-01-01

Graphical abstract: The influence on the photoluminescent performance due to the electronic structure change in Eu-doped CaTiO 3 of the specific core-level and valence band spectrum via X-ray photoemission spectroscopy were characterized. - Highlights: • Single phase CaTiO 3 and CaTiO 3 : Eu crystals were prepared under mild hydrothermal method. • Crystal structure, doping level and the relations to their luminescent property were discussed. • Charge compensation mechanism was discussed via valance band spectrum by XPS. - Abstract: Charge compensation of on-site Eu 4f–5d transition that determines the luminescent performance was confirmed with valance band spectrum. Influence of photoelectrons from CaTiO 3 : Eu to the corresponding luminescent performance was discussed based on the crystal structure, doping level and the relations to their luminescent property. This paper is important to further optimize the luminescent performance for improving the efficiency and reducing the cost in light emitting diode industry.

Swift Monitoring of NGC 4151: Evidence for a Second X-Ray/UV Reprocessing

Energy Technology Data Exchange (ETDEWEB)

Edelson, R. [University of Maryland, Department of Astronomy, College Park, MD 20742-2421 (United States); Gelbord, J. [Spectral Sciences Inc., 4 Fourth Avenue, Burlington, MA 01803 (United States); Cackett, E. [Department of Physics and Astronomy, Wayne State University, 666 W. Hancock Street, Detroit, MI 48201 (United States); Connolly, S.; McHardy, I. [University of Southampton, Highfield, Southampton, SO17 1BJ (United Kingdom); Done, C.; Gardner, E. [University of Durham, Center for Extragalactic Astronomy, Department of Physics, South Road, Durham, DH1 3LE (United Kingdom); Fausnaugh, M.; Peterson, B. M. [The Ohio State University, Department of Astronomy, 140 W 18th Avenue, Columbus, OH 43210 (United States); Gehrels, N. [Astrophysics Science Division, NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Goad, M.; Vaughan, S. [University of Leicester, Department of Physics and Astronomy, Leicester, LE1 7RH (United Kingdom); Horne, K. [SUPA Physics and Astronomy, University of St. Andrews, Fife, KY16 9SS Scotland (United Kingdom); Vestergaard, M. [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 Copenhagen (Denmark); Breeveld, A. [Mullard Space Science Laboratory, University College London, Holmbury St. Mary, Dorking, Surrey RH5 6NT (United Kingdom); Barth, A. J. [Department of Physics and Astronomy, 4129 Frederick Reines Hall, University of California, Irvine, CA 92697 (United States); Bentz, M. [Department of Physics and Astronomy, Georgia State University, 25 Park Place, Suite 605, Atlanta, GA 30303 (United States); Bottorff, M. [Physics Department, Southwestern University, Georgetown, TX 78626 (United States); Brandt, W. N. [Department of Astronomy and Astrophysics, Eberly College of Science, 525 Davey Laboratory, The Pennsylvania State University, University Park, PA 16802 (United States); Crawford, S. M. [South African Astronomical Observatory, P.O. Box 9, Observatory 7935, Cape Town (South Africa); and others

2017-05-01

Swift monitoring of NGC 4151 with an ∼6 hr sampling over a total of 69 days in early 2016 is used to construct light curves covering five bands in the X-rays (0.3–50 keV) and six in the ultraviolet (UV)/optical (1900–5500 Å). The three hardest X-ray bands (>2.5 keV) are all strongly correlated with no measurable interband lag, while the two softer bands show lower variability and weaker correlations. The UV/optical bands are significantly correlated with the X-rays, lagging ∼3–4 days behind the hard X-rays. The variability within the UV/optical bands is also strongly correlated, with the UV appearing to lead the optical by ∼0.5–1 days. This combination of ≳3 day lags between the X-rays and UV and ≲1 day lags within the UV/optical appears to rule out the “lamp-post” reprocessing model in which a hot, X-ray emitting corona directly illuminates the accretion disk, which then reprocesses the energy in the UV/optical. Instead, these results appear consistent with the Gardner and Done picture in which two separate reprocessings occur: first, emission from the corona illuminates an extreme-UV-emitting toroidal component that shields the disk from the corona; this then heats the extreme-UV component, which illuminates the disk and drives its variability.

X-ray photoelectron spectrometry and binding energies of Be 1s and O 1s core levels in clinobarylite, BaBe2Si2O7, from Khibiny massif, Kola peninsula

International Nuclear Information System (INIS)

Atuchin, V.V.; Kesler, V.G.; Sapozhnikov, V.K.; Yakovenchuk, V.N.

2008-01-01

The electronic structure of BaBe 2 Si 2 O 7 , clinobarylite, has been investigated by means of X-ray photoelectron spectroscopy (XPS). The valence band of the crystal is mainly formed by Ba 5p, Ba 3s and O 2s states. At higher binding energies the emission lines related to the Si 2p, Be 1s, Si 2s, O 1s and numerous Ba-related states were analyzed in the photoemission spectrum. The Si KLL Auger line has been measured under excitation by the bremsstrahlung X-rays from the Al anode. Chemical bonding effects for Be 1s core level have been considered by comparison with electronic parameters measured for other beryllium containing oxides

X-ray structure amplitudes for GaAs and InP

International Nuclear Information System (INIS)

Pietsch, U.

1985-01-01

The structure amplitudes of GaAs and InP are calculated taking into account the nonspherical parts of the valence electron density by means of a static bond charge model. The best known temperature factors and dispersion coefficients are employed. The calculated structure amplitudes should help determining exactly the shape of X-ray diffraction patterns. (author)

Electronic structure and optical properties of Cs2HgCl4: DFT calculations and X-ray photoelectron spectroscopy measurements

Science.gov (United States)

Lavrentyev, A. A.; Gabrelian, B. V.; Vu, V. T.; Parasyuk, O. V.; Fedorchuk, A. O.; Khyzhun, O. Y.

2016-10-01

A high-quality single crystal of cesium mercury tetrabromide, Cs2HgCl4, was synthesized by using the vertical Bridgman-Stockbarger method and its electronic structure was studied from both experimental and theoretical viewpoints. In particular, X-ray photoelectron spectra were measured for both pristine and Ar+ ion-bombarded Cs2HgCl4 single crystal surfaces. The present XPS measurements indicate that the Cs2HgCl4 single crystal surface is sensitive with respect to Ar+ ion-bombardment: such a treatment changes substantially its elemental stoichiometry. With the aim of exploring total and partial densities of states within the valence band and conduction band regions of the Cs2HgCl4 compound, band-structure calculations based on density functional theory (DFT) using the augmented plane wave + local orbitals (APW + lo) method as incorporated within the WIEN2k package are performed. The calculations indicate that the Cl 3p states are the principal contributors in the upper portion of the valence band, while the Hg 5d and Cs 5p states dominate in its lower portion. In addition, the calculations allow for concluding that the unoccupied Cl p and Hg s states are the main contributors to the bottom of the conduction band. Furthermore, main optical characteristics of Cs2HgCl4, namely dispersion of the absorption coefficient, real and imaginary parts of dielectric function, electron energy-loss spectrum, refractive index, extinction coefficient and optical reflectivity, are elucidated based on the DFT calculations.

X-ray spectroscopy at the Mn K edge in LaMnO3 : An ab initio study

NARCIS (Netherlands)

Hozoi, L.; Vries, A.H. de; Broer, R.

2001-01-01

We present ab initio quantum chemical embedded cluster calculations of Mn core-valence and d-d transitions in LaMnO3. The results are also important for the analysis of recent x-ray absorption and x-ray scattering experiments at the Mn K edge in LaMnO3. We find that the first two peaks of the

Medical application and its promotion of X-band linacs

International Nuclear Information System (INIS)

Uesaka, Mitsuru; Dobashi, Katsuhiro; Kaneyasu, Tatsuo

2005-01-01

This article presents the current status of the development of the monochromatic tunable hard X-ray source by the X-band linac and YAG leasers. New medical applications such as 2 colors CT and Drug Delivery System (DDS) are planned. Finally, the virtual laboratory for the distribution of the system to the society is discussed. (author)

Dynamics of Impurity and Valence Bands in Ga_1-xMn_xAs Within the Dynamical Mean-Field Approximation

Energy Technology Data Exchange (ETDEWEB)

Majidi, M. A. [University of Cincinnati; Moreno, Juana [University of North Dakota, Grand Forks; Jarrell, Mark [University of Cincinnati; Fishman, Randy Scott [ORNL; Aryanpour, K. A. [University of California, Davis

2006-08-01

We calculate the density-of-states and the spectral function of Ga1−xMnxAs within the dynamical mean-field approximation. Our model includes the competing effects of the strong spin-orbit coupling on the J=3/2 GaAs hole bands and the exchange interaction between the magnetic ions and the itinerant holes. We study the quasiparticle and impurity bands in the paramagnetic and ferromagnetic phases for different values of impurity-hole coupling Jc at a Mn doping of x=0.05. By analyzing the anisotropic angular distribution of the impurity band carriers at T=0, we conclude that the carrier polarization is optimal when the carriers move along the direction parallel to the average magnetization.

Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O

Energy Technology Data Exchange (ETDEWEB)

Kim, Junghwan, E-mail: JH.KIM@lucid.msl.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Miyokawa, Norihiko; Sekiya, Takumi; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Toda, Yoshitake [Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio [Materials and Structures Laboratory, Tokyo Institute of Technology, Mailbox R3-4, 4259 Nagatsuta, Midori-ku, Yokohama (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, Mailbox SE-6, 4259 Nagatsuta, Midori-ku, Yokohama (Japan)

2016-09-01

We fabricated amorphous oxide semiconductor films, a-(Ga{sub 1–x}Zn{sub x})O{sub y}, at room temperature on glass, which have widely tunable band gaps (E{sub g}) ranging from 3.47–4.12 eV. The highest electron Hall mobility ~ 7 cm{sup 2} V{sup −1} s{sup −1} was obtained for E{sub g} = ~ 3.8 eV. Ultraviolet photoemission spectroscopy revealed that the increase in E{sub g} with increasing the Ga content comes mostly from the deepening of the valence band maximum level while the conduction band minimum level remains almost unchanged. These characteristics are explained by their electronic structures. As these films can be fabricated at room temperature on plastic, this achievement extends the applications of flexible electronics to opto-electronic integrated circuits associated with deep ultraviolet region. - Highlights: • Incorporation of H/H{sub 2}O stabilizes the amorphous phase. • Ultrawide band gap (~ 3.8 eV) amorphous oxide semiconductor was fabricated. • The increase in band gap comes mostly from the deepening of the valence band maximum level. • Donor level is more likely aligned to the valence band maximum level.

K- and L-edge X-ray Absorption Spectroscopy (XAS) and Resonant Inelastic X-ray Scattering (RIXS) Determination of Differential Orbital Covalency (DOC) of Transition Metal Sites.

Science.gov (United States)

Baker, Michael L; Mara, Michael W; Yan, James J; Hodgson, Keith O; Hedman, Britt; Solomon, Edward I

2017-08-15

Continual advancements in the development of synchrotron radiation sources have resulted in X-ray based spectroscopic techniques capable of probing the electronic and structural properties of numerous systems. This review gives an overview of the application of metal K-edge and L-edge X-ray absorption spectroscopy (XAS), as well as K resonant inelastic X-ray scattering (RIXS), to the study of electronic structure in transition metal sites with emphasis on experimentally quantifying 3d orbital covalency. The specific sensitivities of K-edge XAS, L-edge XAS, and RIXS are discussed emphasizing the complementary nature of the methods. L-edge XAS and RIXS are sensitive to mixing between 3d orbitals and ligand valence orbitals, and to the differential orbital covalency (DOC), that is, the difference in the covalencies for different symmetry sets of the d orbitals. Both L-edge XAS and RIXS are highly sensitive to and enable separation of and donor bonding and back bonding contributions to bonding. Applying ligand field multiplet simulations, including charge transfer via valence bond configuration interactions, DOC can be obtained for direct comparison with density functional theory calculations and to understand chemical trends. The application of RIXS as a probe of frontier molecular orbitals in a heme enzyme demonstrates the potential of this method for the study of metal sites in highly covalent coordination sites in bioinorganic chemistry.

Vanadium K XANES of synthetic olivine: Valence determinations and crystal orientation effects

International Nuclear Information System (INIS)

Sutton, S.R.; Newville, M.

2005-01-01

Vanadium can exist in a large number of valence states in nature (2+?, 3+, 4+ and 5+) and determinations of V valence is therefore valuable in defining the oxidation states of earth and planetary materials over a large redox range. Synchrotron-based x-ray absorption near edge structure (XANES) spectroscopy is well-suited for measurements of V valence with ∼micrometer spatial resolution and ∼ppm elemental sensitivity. Applications of microXANES have been demonstrated for basaltic glasses. Applications to minerals are feasible but complicated by orientation effects (e.g. due to polarization of the synchrotron x-ray beam) and some results for spinel have been reported. Here we report initial results for olivine from laboratory crystallization ex-periments. The goal is to define the valence partition-ing between olivine and melt and quantify the magnitude of orientation effects, the latter tested by measuring grains at a variety of orientations in the same charge.

Time-resolved imaging of purely valence-electron dynamics during a chemical reaction

DEFF Research Database (Denmark)

Hockett, Paul; Bisgaard, Christer Z.; Clarkin, Owen J.

2011-01-01

Chemical reactions are manifestations of the dynamics of molecular valence electrons and their couplings to atomic motions. Emerging methods in attosecond science can probe purely electronic dynamics in atomic and molecular systems(1-6). By contrast, time-resolved structural-dynamics methods...... such as electron(7-10) or X-ray diffraction(11) and X-ray absorption(12) yield complementary information about the atomic motions. Time-resolved methods that are directly sensitive to both valence-electron dynamics and atomic motions include photoelectron spectroscopy(13-15) and high-harmonic generation(16......,17): in both cases, this sensitivity derives from the ionization-matrix element(18,19). Here we demonstrate a time-resolved molecular-frame photoelectron-angular-distribution (TRMFPAD) method for imaging the purely valence-electron dynamics during a chemical reaction. Specifically, the TRMFPADs measured during...

Circumstellar X-ray Emission from SN1978K

Science.gov (United States)

Schlegel, Eric M.; Colbert, E.; Petre, R.

1995-02-01

We present the X-ray light curve in the 0.2 2.4 keV band based on fiveROSAT observations of SN1978K in NGC 1313. The X-ray emission is believed to arise from the interaction of the reverse shock and the expanding debris from the supernova. The reverse shock becomes established after the outgoing shock runs into circumstellar matter.

Band-gap narrowing of TiO2 films induced by N-doping

International Nuclear Information System (INIS)

Nakano, Y.; Morikawa, T.; Ohwaki, T.; Taga, Y.

2006-01-01

N-doped TiO 2 films were deposited on n + -GaN/Al 2 O 3 substrates by reactive magnetron sputtering and subsequently crystallized by annealing at 550 o C in flowing N 2 gas. The N-doping concentration was ∼8.8%, as determined from X-ray photoelectron spectroscopy measurements. Deep-level optical spectroscopy measurements revealed two characteristic deep levels located at 1.18 and 2.48 eV below the conduction band. The 1.18 eV level is probably attributable to the O vacancy state and can be active as an efficient generation-recombination center. Additionally, the 2.48 eV band is newly introduced by the N-doping and contributes to band-gap narrowing by mixing with the O 2p valence band

The origin of anisotropy and high density of states in the electronic structure of Cr2GeC by means of polarized soft x-ray spectroscopy and ab initio calculations

Science.gov (United States)

Magnuson, Martin; Mattesini, Maurizio; Bugnet, Matthieu; Eklund, Per

2015-10-01

The anisotropy in the electronic structure of the inherently nanolaminated ternary phase Cr2GeC is investigated by bulk-sensitive and element selective soft x-ray absorption/emission spectroscopy. The angle-resolved absorption/emission measurements reveal differences between the in-plane and out-of-plane bonding at the (0001) interfaces of Cr2GeC. The Cr L 2, 3, C K, and Ge M 1, M 2, 3 emission spectra are interpreted with first-principles density-functional theory (DFT) including core-to-valence dipole transition matrix elements. For the Ge 4s states, the x-ray emission measurements reveal two orders of magnitude higher intensity at the Fermi level than DFT within the General Gradient Approximation (GGA) predicts. We provide direct evidence of anisotropy in the electronic structure and the orbital occupation that should affect the thermal expansion coefficient and transport properties. As shown in this work, hybridization and redistribution of intensity from the shallow 3d core levels to the 4s valence band explain the large Ge density of states at the Fermi level.

X-ray absorption near edge spectroscopy at the Mn K-edge in highly homogeneous GaMnN diluted magnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Sancho-Juan, O.; Cantarero, A.; Garro, N.; Cros, A. [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain); Martinez-Criado, G.; Salome, M.; Susini, J. [ESRF, Polygone Scientifique Louis Neel, 6 rue Jules Horowitz, 38000 Grenoble (France); Olguin, D. [Dept. de Fisica, CINVESTAV-IPN, 07300 Mexico D.F. (Mexico); Dhar, S.; Ploog, K. [Paul Drude Institute, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2006-06-15

We have studied by X-ray absorption spectroscopy the local environment of Mn in highly homogeneous Ga{sub 1-x}Mn{sub x}N (0.06<x<0.14) thin epilayers grown by molecular beam epitaxy on [0001] SiC substrates. The measurements were performed in fluorescence mode around the Ga and Mn K-edges. In this report, we focus our attention to the X-ray absorption near edge spectroscopy (XANES) results. The comparison of the XANES spectra corresponding to the Ga and Mn edges indicates that Mn is substitutional to Ga in all samples studied. The XANES spectra measured at the Mn absorption edge shows in the near-edge region a double peak and a shoulder below the absorption edge and the main absorption peak after the edge, separated around 15 eV above the pre-edge structure. We have compared the position of the edge with that of MnO (Mn{sup 2+}) and Mn{sub 2}O{sub 3} (Mn{sup 3+}). All samples studied present the same Mn oxidation state, 2{sup +}. In order to interprete the near-edge structure, we have performed ab initio calculations with a 2 x 2 x 1supercell ({proportional_to}6% Mn) using the full potential linear augmented plane wave method as implemented in the Wien2k code. The calculations show the appearance of Mn anti-bonding t{sub 2g} bands, which are responsible for the pre-edge absorption. The shoulder and main absorption peaks are due to transitions from the valence band 1s-states of Mn to the p-contributions of the conduction bands. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Reduction of Kondo lattice effects in Yb1-xLuxAl3 observed by soft x-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Yamaguchi, J; Sekiyama, A; Imada, S; Yamasaki, A; Tsunekawa, M; Muro, T; Ebihara, T; Onuki, Y; Suga, S

2007-01-01

We have carried out the bulk-sensitive and high-resolution soft x-ray photoelectron spectroscopy on Lu substituted intermediate-valence compound Yb 1-x Lu x Al 3 (x = 0.4) at temperatures from 200 to 20 K. The temperature dependences of the bulk Yb 4f photoelectron spectra revealed in our preceding works on high purity YbAl 3 have not been observed in this Lu substituted system. The temperature dependences of the bulk Yb 4f peak positions and the Yb valence in this system can be well reproduced by the single impurity Anderson model (SIAM), whereas the spectral behaviors in YbAl 3 were not at all reproduced by the SIAM. These results confirm the importance of the Kondo lattice effects for YbAl 3 , for which the coherent lattice periodicity plays essential roles

Intensity-Modulated Advanced X-ray Source (IMAXS) for Homeland Security Applications

International Nuclear Information System (INIS)

Langeveld, Willem G. J.; Johnson, William A.; Owen, Roger D.; Schonberg, Russell G.

2009-01-01

X-ray cargo inspection systems for the detection and verification of threats and contraband require high x-ray energy and high x-ray intensity to penetrate dense cargo. On the other hand, low intensity is desirable to minimize the radiation footprint. A collaboration between HESCO/PTSE Inc., Schonberg Research Corporation and Rapiscan Laboratories, Inc. has been formed in order to design and build an Intensity-Modulated Advanced X-ray Source (IMAXS). Such a source would allow cargo inspection systems to achieve up to two inches greater imaging penetration capability, while retaining the same average radiation footprint as present fixed-intensity sources. Alternatively, the same penetration capability can be obtained as with conventional sources with a reduction of the average radiation footprint by about a factor of three. The key idea is to change the intensity of the source for each x-ray pulse based on the signal strengths in the inspection system detector array during the previous pulse. In this paper we describe methods to accomplish pulse-to-pulse intensity modulation in both S-band (2998 MHz) and X-band (9303 MHz) linac sources, with diode or triode (gridded) electron guns. The feasibility of these methods has been demonstrated. Additionally, we describe a study of a shielding design that would allow a 6 MV X-band source to be used in mobile applications.

Development of a Wolter Optic X-ray Imager on Z

Science.gov (United States)

Fein, Jeffrey R.; Ampleford, David J.; Vogel, Julia K.; Kozioziemski, Bernie; Walton, Christopher C.; Wu, Ming; Ayers, Jay; Ball, Chris J.; Bourdon, Chris J.; Maurer, Andrew; Pivovaroff, Mike; Ramsey, Brian; Romaine, Suzanne

2017-10-01

A Wolter optic x-ray imager is being developed for the Z Machine to study the dynamics of warm x-ray sources with energies above 10 keV. The optic is adapted from observational astronomy and uses multilayer-coated, hyperbolic and parabolic x-ray mirrors to form a 2D image with predicted 100- μm resolution over a 5x5-mm field of view. The imager is expected to have several advantages over a simple pinhole camera. In particular, it can form quasi mono-energetic images due to the inherent band-pass nature of the x-ray mirrors from Bragg diffraction. As well, its larger collection solid angle can lead to an overall increase in efficiency for the x-rays in the desirable energy band. We present the design of the imaging system, which is initially optimized to view Mo K-alpha x-rays (17.5 keV). In addition, we will present preliminary measurements of the point-spread function as well as the spectral sensitivity of the instrument. Sandia National Laboratories is a multimission laboratory managed and operated by NTESS, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. DOE's NNSA under contract DE-NA-0003525.

First determination of the valence band dispersion of CH3NH3PbI3 hybrid organic-inorganic perovskite

Science.gov (United States)

Lee, Min-I.; Barragán, Ana; Nair, Maya N.; Jacques, Vincent L. R.; Le Bolloc'h, David; Fertey, Pierre; Jemli, Khaoula; Lédée, Ferdinand; Trippé-Allard, Gaëlle; Deleporte, Emmanuelle; Taleb-Ibrahimi, Amina; Tejeda, Antonio

2017-07-01

The family of hybrid organic-inorganic halide perovskites is in the limelight because of their recently discovered high photovoltaic efficiency. These materials combine photovoltaic energy conversion efficiencies exceeding 22% and low-temperature and low-cost processing in solution; a breakthrough in the panorama of renewable energy. Solar cell operation relies on the excitation of the valence band electrons to the conduction band by solar photons. One factor strongly impacting the absorption efficiency is the band dispersion. The band dispersion has been extensively studied theoretically, but no experimental information was available. Herein, we present the first experimental determination of the valence band dispersion of methylammonium lead halide in the tetragonal phase. Our results pave the way for contrasting the electronic hopping or the electron effective masses in different theories by comparing to our experimental bands. We also show a significant broadening of the electronic states, promoting relaxed conditions for photon absorption, and demonstrate that the tetragonal structure associated to the octahedra network distortion below 50 °C induces only a minor modification of the electronic bands, with respect to the cubic phase at high temperature, thus minimizing the impact of the cubic-tetragonal transition on solar cell efficiencies.

Characteristics of soft X-ray lens

International Nuclear Information System (INIS)

Qin Yi

2007-12-01

A soft X-lens was devised with waveguide X-ray optics of total external reflection (TER). The lens consists of a stack of 1 387 TER waveguides with inner diameter of 0.45 mm and outer diameter of 0.60 mm. With the help of plasma sources of soft X-ray radiation, high density of pure soft X-ray radiation (without plasma expansion fragments) with broad-band spectral range can be obtained at the focus of the lens. As laser-plasma is considered, the radiation density of 1.3 x 10 5 W/cm 2 is obtained, the transmission coefficient is 18.6%, the ratio of the density at the focus with and without the lens is 1000 and the radiation capture is 28.9 degree. The density of 0.5 TW/cm 2 can be obtained as far as Qiang-Guang I facility is considered. (authors)

Effect of phase formation on valence band photoemission and photoresonance study of Ti/Ni multilayers using synchrotron radiation

International Nuclear Information System (INIS)

Bhatt, Pramod; Chaudhari, S.M.

2006-01-01

This paper presents investigation of Ti-Ni alloy phase formation and its effect on valence band (VB) photoemission and photoresonance study of as-deposited as well as annealed Ti/Ni multilayers (MLs) up to 600 deg. C using synchrotron radiation. For this purpose [Ti (50 A)/Ni (50 A)]X 10 ML structures were deposited by using electron-beam evaporation technique under ultra-high vacuum (UHV) conditions. Formation of different phases of Ti-Ni alloy due to annealing treatment has been confirmed by the X-ray diffraction (XRD) technique. The XRD pattern corresponding as-deposited ML sample shows crystalline nature of both Ti and Ni deposited layers, whereas 300 deg. C annealed ML sample show solid-state reaction (SSR) leading to amorphization and subsequent recrystallisation at higher temperatures of annealing (≥400 deg. C) with the formation of TiNi, TiNi 3 and Ti 2 Ni alloy phases. The survey scans corresponding to 400, 500 and 600 deg. C annealed ML sample shows interdiffusion and intermixing of Ni atoms into Ti layers leading to chemical Ti-Ni alloys phase formation at interface. The corresponding recorded VB spectra using synchrotron radiation at 134 eV on as-deposited ML sample with successive sputtering shows alternately photoemission bands due to Ti 3d and Ni 3d, respectively, indicating there is no mixing of the consequent layers and any phase formation at the interface during deposition. However, ML samples annealed at higher temperatures of annealing, particularly at 400, 500 and 600 deg. C show a clear shift in Ni 3d band and its satellite peak position to higher BE side indicates Ti-Ni alloy phase formation. In addition to this, reduction of satellite peak intensity and Ni 3d density of states (DOS) near Fermi level is also observed due to Ti-Ni phase formation with higher annealing temperatures. The variable photon energy VB measurements on as-deposited and ML samples annealed at 400 deg. C confirms existence and BE position of observed Ni 3d satellite

X-ray spectroscopic study of amorphous and polycrystalline PbO films, α-PbO, and β-PbO for direct conversion imaging.

Science.gov (United States)

Qamar, A; LeBlanc, K; Semeniuk, O; Reznik, A; Lin, J; Pan, Y; Moewes, A

2017-10-13

We investigated the electronic structure of Lead Oxide (PbO) - one of the most promising photoconductor materials for direct conversion x-ray imaging detectors, using soft x-ray emission and absorption spectroscopy. Two structural configurations of thin PbO layers, namely the polycrystalline and the amorphous phase, were studied, and compared to the properties of powdered α-PbO and β-PbO samples. In addition, we performed calculations within the framework of density functional theory and found an excellent agreement between the calculated and the measured absorption and emission spectra, which indicates high accuracy of our structural models. Our work provides strong evidence that the electronic structure of PbO layers, specifically the width of the band gap and the presence of additional interband and intraband states in both conduction and valence band, depend on the deposition conditions. We tested several model structures using DFT simulations to understand what the origin of these states is. The presence of O vacancies is the most plausible explanation for these additional electronic states. Several other plausible models were ruled out including interstitial O, dislocated O and the presence of significant lattice stress in PbO.

Structural and magnetic characterization of mixed valence Co(II, III)xZn1−xO epitaxial thin films

International Nuclear Information System (INIS)

Negi, D.S.; Loukya, B.; Dileep, K.; Sahu, R.; Shetty, S.; Kumar, N.; Ghatak, J.; Pachauri, N.; Gupta, A.; Datta, R.

2014-01-01

In this article, we report on the Co atom incorporation, secondary phase formation and composition-dependent magnetic and optical properties of mixed valence Co(II, III) x Zn 1−x O epitaxial thin films grown by pulsed laser deposition. The intended total Co concentration is varied between ∼6–60 at.% with relatively higher concentration of +3 over +2 charge state. Mixed valence Co(II, III) shows high solubility in ZnO (up to 38 at.%) and ferromagnetism is observed in samples with total Co incorporation of ∼29 and 38 at.%. Electron diffraction pattern and high resolution transmission electron microscopy images reveal single crystalline nature of the thin films with wurtzite structure. Co oxide interlayer, with both rock salt and spinel structure, are observed to be formed between the substrate and wurtzite film for total Co concentration at ∼17 at.% and above. Magnetization shows composition dependence with a saturation moment value of ∼93 emu cm −3 and a coercive field of ∼285 Oe observed for ∼38 at.% Co:ZnO films. Ferromagnetism was not observed for films with Co concentration 17 and 9 at.%. The Co oxide interlayer does not show any ferromagnetism. All the films are n-type with carrier concentration ∼10 19 cm −3 . The observed magnetism is probably resulting from direct antiferromagntic exchange interaction between Co 2+ and Co 3+ ions favored by heavy Co alloying giving rise to ferrimagnetism in the system. - Highlights: • Mixed valence Co doped ZnO ferromagnetic single crystal thin film. • Secondary phase formation in terms of CoO and Co3O4 and magnetism is observed only for high Co alloying. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations

Composition and carrier-concentration dependence of the electronic structure of InyGa1-yAs1-xNx films with nitrogen mole fraction of less than 0.012

International Nuclear Information System (INIS)

Kang, Youn-Seon; Robins, Lawrence H.; Birdwell, Anthony G.; Shapiro, Alexander J.; Thurber, W. Robert; Vaudin, Mark D.; Fahmi, M.M.E.; Bryson, Damian; Mohammad, S. Noor

2005-01-01

The electronic structure of Si-doped In y Ga 1-y As 1-x N x films on GaAs substrates, grown by nitrogen-plasma-assisted molecular-beam epitaxy, was examined by photoreflectance (PR) spectroscopy at temperatures between 20 and 300 K. The films were approximately 0.5 μm thick and had nitrogen mole fraction between x=0.0014 and x=0.012, measured indirectly by a secondary-ion-mass spectrometry calibration; indium mole fraction between y=0.052 and y=0.075, measured by electron-dispersive x-ray spectroscopy; and carrier concentration between 2x10 16 and 1.1x10 18 cm -3 , measured by Hall effect. Three critical-point transitions were identified by PR: the fundamental band gap (highest valence band to the lowest conduction band); the spin-orbit split valence band to the lowest conduction band; and the highest valence band to a nitrogen impurity band (above the lowest conduction band). The measured critical-point energies were described by a band anticrossing (BAC) model with the addition of a Burstein-Moss band-filling term. The fitted BAC parameters were similar to previously reported values. The N impurity level was located 0.3004±0.0101 eV above the conduction-band edge at 20 K and 0.3286±0.0089 eV above the conduction-band edge at 295 K. The BAC interaction parameter was 2.588±0.071 eV. From the small magnitude of the Burstein-Moss energy shift with increasing carrier concentration, it was inferred that the carrier concentration probed by PR is reduced from the bulk (Hall-effect) carrier concentration by a reduction factor of 0.266±0.145. The PR lines broadened with increasing carrier concentration; the line broadening tracked the predicted Burstein-Moss energy shift for the bulk carrier concentration. The surface-normal lattice constants of the films were measured by x-ray diffraction. Comparison of the measured lattice constants with Vegard's law showed the presence of tensile strain (in the surface-normal direction) with magnitude between 1.5x10 -3 and 3.0x10

X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Monaco, G.; Suman, M.; Garoli, D.; Pelizzo, M.G.; Nicolosi, P.

2011-01-01

Silicon carbide (SiC) is an important material for several applications ranging from electronics to Extreme UltraViolet (EUV) space optics. Crystalline cubic SiC (3C-SiC) has a wide band gap (near 2.4 eV) and it is a promising material to be used in high frequency and high energetic electronic devices. We have deposited, by means of pulsed laser deposition (PLD), different SiC films on sapphire and silicon substrates both at mild (650 o C) and at room temperature. The resulted films have different structures such as: highly oriented polycrystalline, polycrystalline and amorphous which have been studied by means of X-ray absorption spectroscopy (XAS) near the Si L 2,3 edge and the C K edge using PES (photoemission spectroscopy) for the analysis of the valence bands structure and film composition. The samples obtained by PLD have shown different spectra among the grown films, some of them showing typical 3C-SiC absorption structure, but also the presence of some Si-Si and graphitic bonds.

THE X-RAY HALO OF CEN X-3

International Nuclear Information System (INIS)

Thompson, Thomas W. J.; Rothschild, Richard E.

2009-01-01

Using two Chandra observations, we have derived estimates of the dust distribution and distance to the eclipsing high-mass X-ray binary Cen X-3 using the energy-resolved dust-scattered X-ray halo. By comparing the observed X-ray halos in 200 eV bands from 2-5 keV to the halo profiles predicted by the Weingartner and Draine interstellar grain model, we find that the vast majority (∼ 70%) of the dust along the line of sight to the system is located within about 300 pc of the Sun, although the halo measurements are insensitive to dust very close to the source. One of the Chandra observations occurred during an egress from eclipse as the pulsar emerged from behind the mass-donating primary. By comparing model halo light curves during this transition to the halo measurements, a source distance of 5.7 ± 1.5 kpc (68% confidence level) is estimated, although we find this result depends on the distribution of dust on very small scales. Nevertheless, this value is marginally inconsistent with the commonly accepted distance to Cen X-3 of 8 kpc. We also find that the energy scaling of the scattering optical depth predicted by the Weingartner and Draine interstellar grain model does not accurately represent the results determined by X-ray halo studies of Cen X-3. Relative to the model, there appears to be less scattering at low energies or more scattering at high energies in Cen X-3.

Band Alignment and Optical Properties of (ZrO20.66(HfO20.34 Gate Dielectrics Thin Films on p-Si (100

Directory of Open Access Journals (Sweden)

Dahlang Tahir

2011-11-01

Full Text Available (ZrO20.66(HfO20.34 dielectric films on p-Si (100 were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gaps were obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for (ZrO20.66(HfO20.34 dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of ZrO2. In addition, The dielectric function ε (k, ω, index of refraction n and the extinction coefficient k for the (ZrO20.66(HfO20.34 thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-ε (k,ω-REELS software package. These optical properties are similar with ZrO2 dielectric thin films.

Magnetic imaging by dichroic x-ray holography

International Nuclear Information System (INIS)

Eisebitt, S.; Loergen, M.; Eberhardt, W.; Luening, M.; Schlotter, W.F.; Stoehr, J.; Hellwig, O.

2004-01-01

Full text: While holography has evolved to a powerful technique in the visible spectral range, it is difficult to apply at shorter wavelength as no intrinsically coherent (soft) x-ray laser is available as a light source. The progression from visible light towards shorter wavelength is motivated by the increase in spatial resolution that can be achieved. Of equal importance is the possibility to exploit special contrast mechanisms provided by scattering in resonance with transitions between electronic core and valence levels. These contrast mechanisms can be utilized in x-ray holography to form a spectroscopic image of the sample, in analogy to spectromicroscopy. So far, successful x-ray spectroholography has not been reported due to the experimental difficulties associated with the short wavelength and the limited coherent photon flux available. We present images of magnetic domain patterns forming in thin film Co-Pt multilayers, obtained by spectroholography at a wavelength of 1.59 nm. At this wavelength, we exploit x ray magnetic dichroism at the Co 2p 3/2 level in a Fourier transform holography experiment. Holography at this wavelength was made possible by combining nanostructured masks with coherence l tered synchrotron radiation from an undulator source in the experimental setup. The magnetic multilayers have perpendicular anisotropy and are probed using circular polarized x-rays. Dichroic holograms are recorded by combining measurements with positive and negative helicities. The spectroholograms can be numerically inverted to show the pure magnetic sample structure, such as labyrinth or stripe domains. Currently, we achieve a spatial resolution of 100 nm in the magnetic image. The advantages and limitations of this technique will be compared to other lensless imaging techniques such as over sampling phasing. The future prospects of imaging techniques based on coherent scattering are discussed in the context of the current development of free electron x-ray

X-Ray Polarimetry with GEMS

Science.gov (United States)

Strohmayer, Tod

2011-01-01

The polarization properties of cosmic X-ray sources are still largely unexplored. The Gravity and Extreme Magnetism SMEX (GEMS) will carry out the first sensitive X-ray polarization survey of a wide range of sources including; accreting compact objects (black holes and neutron stars), AGN, supernova remnants, magnetars and rotation-powered pulsars. GEMS employs grazing-incidence foil mirrors and novel time-projection chamber (TPC) polarimeters leveraging the photoelectric effect to achieve high polarization sensitivity in the 2 - 10 keV band. I will provide an update of the project status, illustrate the expected performance with several science examples, and provide a brief overview of the data analysis challenges

X-ray or UV-ray imaging sensor utilizing optically stimulated luminescence phenomenon in Eu-doped KCl phosphors

International Nuclear Information System (INIS)

Nanto, Hidehito; Murayama, Kazuhiko; Hirai, Yoshiaki; Taniguchi, Shin-ichi; Makamura, Shouichi; Takeuchi, Nozomu.

1993-01-01

An intense OSL with a peak at about 420 [nm] has been observed by stimulating an X-ray or UV-ray irradiated KCl: Eu crystal with F-band light whose wavelength is about 560 [um]. A possible excitation and emission mechanisms for the 420 [um] OSL peak X-ray or UV-ray irradiated sample is proposed. It is found that the OSL intensity is proportional to the X-ray absorbed dose or UV-ray irradiation dose. It is also found that X-ray or UV-ray irradiated KCl; Eu exhibited excellent fading characteristics. These results strongly suggest that the KCl: Eu is one of the most attractive candidates for two-dimensional X-ray or UV-ray imaging sensor utilizing the OSL phenomenon. (J.P.N.)

Diamond detectors for synchrotron radiation X-ray applications

Energy Technology Data Exchange (ETDEWEB)

De Sio, A. [Laboratori Nazionali di Frascati, INFN, 00044 Frascati, Roma (Italy); Department of Astronomy and Space Science, Universita di Firenze, L.go E. Fermi 2, 50125 Firenze (Italy)], E-mail: desio@arcetri.astro.it; Pace, E. [Department of Astronomy and Space Science, Universita di Firenze, L.go E. Fermi 2, 50125 Firenze (Italy); INFN, Sezione di Firenze, v. G. Sansone 1, Sesto Fiorentino, Firenze (Italy); Cinque, G.; Marcelli, A. [Laboratori Nazionali di Frascati, INFN, 00044 Frascati, Roma (Italy); Achard, J.; Tallaire, A. [LIMHP-CNRS, University of Paris XIII, 99 Avenue JB Clement, 93430 Villetaneuse (France)

2007-07-15

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the band gap. Furthermore, due to its radiation hardness diamond is very interesting for applications in extreme environments, or as monitor of high fluency radiation beams. In this work the use of diamond based detectors for X-ray sensing is discussed. On purpose, some photo-conductors based on different diamond types have been tested at the DAFNE-L synchrotron radiation laboratory at Frascati. X-ray sensitivity spectra, linearity and stability of the response of these diamond devices have been measured in order to evidence the promising performance of such devices.

Diamond detectors for synchrotron radiation X-ray applications

International Nuclear Information System (INIS)

De Sio, A.; Pace, E.; Cinque, G.; Marcelli, A.; Achard, J.; Tallaire, A.

2007-01-01

Due to its unique physical properties, diamond is a very appealing material for the development of electronic devices and sensors. Its wide band gap (5.5 eV) endows diamond based devices with low thermal noise, low dark current levels and, in the case of radiation detectors, high visible-to-X-ray signal discrimination (visible blindness) as well as high sensitivity to energies greater than the band gap. Furthermore, due to its radiation hardness diamond is very interesting for applications in extreme environments, or as monitor of high fluency radiation beams. In this work the use of diamond based detectors for X-ray sensing is discussed. On purpose, some photo-conductors based on different diamond types have been tested at the DAFNE-L synchrotron radiation laboratory at Frascati. X-ray sensitivity spectra, linearity and stability of the response of these diamond devices have been measured in order to evidence the promising performance of such devices

Weak hard X-ray emission from broad absorption line quasars: evidence for intrinsic X-ray weakness

International Nuclear Information System (INIS)

Luo, B.; Brandt, W. N.; Scott, A. E.; Alexander, D. M.; Gandhi, P.; Stern, D.; Teng, S. H.; Arévalo, P.; Bauer, F. E.; Boggs, S. E.; Craig, W. W.; Christensen, F. E.; Comastri, A.; Farrah, D.; Hailey, C. J.; Harrison, F. A.; Koss, M.; Ogle, P.; Puccetti, S.; Saez, C.

2014-01-01

We report NuSTAR observations of a sample of six X-ray weak broad absorption line (BAL) quasars. These targets, at z = 0.148-1.223, are among the optically brightest and most luminous BAL quasars known at z < 1.3. However, their rest-frame ≈2 keV luminosities are 14 to >330 times weaker than expected for typical quasars. Our results from a pilot NuSTAR study of two low-redshift BAL quasars, a Chandra stacking analysis of a sample of high-redshift BAL quasars, and a NuSTAR spectral analysis of the local BAL quasar Mrk 231 have already suggested the existence of intrinsically X-ray weak BAL quasars, i.e., quasars not emitting X-rays at the level expected from their optical/UV emission. The aim of the current program is to extend the search for such extraordinary objects. Three of the six new targets are weakly detected by NuSTAR with ≲ 45 counts in the 3-24 keV band, and the other three are not detected. The hard X-ray (8-24 keV) weakness observed by NuSTAR requires Compton-thick absorption if these objects have nominal underlying X-ray emission. However, a soft stacked effective photon index (Γ eff ≈ 1.8) for this sample disfavors Compton-thick absorption in general. The uniform hard X-ray weakness observed by NuSTAR for this and the pilot samples selected with <10 keV weakness also suggests that the X-ray weakness is intrinsic in at least some of the targets. We conclude that the NuSTAR observations have likely discovered a significant population (≳ 33%) of intrinsically X-ray weak objects among the BAL quasars with significantly weak <10 keV emission. We suggest that intrinsically X-ray weak quasars might be preferentially observed as BAL quasars.

Electrical properties and band structures of Pb1-x Snx Te alloys

International Nuclear Information System (INIS)

Ocio, Miguel

1972-01-01

Both p type alloys Pb 0.72 Sn 0.28 Te and Pb 0.53 Sn 0.47 Te have been studied in the present work. The main obtained results are the following: the materials have a two-valence band structure, the first band following non-parabolic Cohen's dispersion law; at low temperatures, carriers are scattered by ionized impurities; the Coulomb potentials being screened almost completely, impurities act like neutral centers. At room temperature, scattering by acoustic modes can explain lattice mobility behavior; reversing of the thermo-power, for samples with carrier densities of about 10 20 cm -3 , is possibly due to inter-band scattering between both valence bands; a very simple picture of the band parameters variations as a function of alloy fraction is suggested. (author) [fr

Universality class of non-Fermi-liquid behavior in mixed-valence systems

Science.gov (United States)

Zhang, Guang-Ming; Su, Zhao-Bin; Yu, Lu

1996-01-01

A generalized Anderson single-impurity model with off-site Coulomb interactions is derived from the extended three-band Hubbard model, originally proposed to describe the physics of the copper oxides. Using the Abelian bosonization technique and canonical transformations, an effective Hamiltonian is derived in the strong-coupling limit, which is essentially analogous to the Toulouse limit of the ordinary Kondo problem. In this limit, the effective Hamiltonian can be exactly solved, with a mixed-valence quantum critical point separating two different Fermi-liquid phases, i.e., the Kondo phase and the empty orbital phase. In the mixed-valence quantum critical regime, the local moment is only partially quenched and x-ray edge singularities are generated. Around the quantum critical point, a type of non-Fermi-liquid behavior is predicted with an extra specific heat Cimp~T1/4 and a singular spin susceptibility χimp~T-3/4. At the same time, the effective Hamiltonian under single occupancy is transformed into a resonant-level model, from which the correct Kondo physical properties (specific heat, spin susceptibility, and an enhanced Wilson ratio) are easily rederived. Finally, a brief discussion is given to relate these theoretical results to observations in UPdxCu5-x (x=1,1.5) alloys, which show single-impurity critical behavior consistent with our predictions.

Einstein X-ray observations of Herbig Ae/Be stars

Science.gov (United States)

Damiani, F.; Micela, G.; Sciortino, S.; Harnden, F. R., Jr.

1994-01-01

We have investigated the X-ray emission from Herbig Ae/Be stars, using the full set of Einstein Imaging Proportional Counter (IPC) observations. Of a total of 31 observed Herbig stars, 11 are confidently identified with X-ray sources, with four additonal dubious identifications. We have used maximum likelihood luminosity functions to study the distribution of X-ray luminosity, and we find that Be stars are significantly brighter in X-rays than Ae stars and that their X-ray luminosity is independent of projected rotational velocity v sin i. The X-ray emission is instead correlated with stellar bolometric luminosity and with effective temperature, and also with the kinetic luminosity of the stellar wind. These results seem to exclude a solar-like origin for the X-ray emission, a possibility suggested by the most recent models of Herbig stars' structure, and suggest an analogy with the X-ray emission of O (and early B) stars. We also observe correlations between X-ray luminosity and the emission at 2.2 microns (K band) and 25 microns, which strengthen the case for X-ray emission of Herbig stars originating in their circumstellar envelopes.

Adsorption of 3,4-ethylenedioxythiophene (EDOT) on noble metal surfaces: A photoemission and X-ray absorption study

International Nuclear Information System (INIS)

Pasquali, L.; Terzi, F.; Montecchi, M.; Doyle, B.P.; Lukkari, J.; Zanfrognini, B.; Seeber, R.; Nannarone, S.

2009-01-01

The adsorption of 3,4-ethylenedioxythiophene (EDOT) on Au and Pt surfaces is studied by core level and valence band photoemission using synchrotron radiation and by near edge X-ray absorption spectroscopy. To closer simulate real applications, the films are grown from aqueous solution at room temperature and are compared to an 'ideal' film prepared by dosing the molecules from the vapour phase on a clean Au(1 1 1) single crystal. The S 2p, C 1s and O 1s levels show multiple components which are associated to molecular fragmentation. NEXAFS confirms that fragmentation takes place at the surface. Thiophene species as well as alkyl chains and S n species are identified as the most probable fragmentation products.

A broad band X-ray imaging spectrophotometer for astrophysical studies

Science.gov (United States)

Lum, Kenneth S. K.; Lee, Dong Hwan; Ku, William H.-M.

1988-01-01

A broadband X-ray imaging spectrophotometer (BBXRIS) has been built for astrophysical studies. The BBXRIS is based on a large-imaging gas scintillation proportional counter (LIGSPC), a combination of a gas scintillation proportional counter and a multiwire proportional counter, which achieves 8 percent (FWHM) energy resolution and 1.5-mm (FWHM) spatial resolution at 5.9 keV. The LIGSPC can be integrated with a grazing incidence mirror and a coded aperture mask to provide imaging over a broad range of X-ray energies. The results of tests involving the LIGSPC and a coded aperture mask are presented, and possible applications of the BBXRIS are discussed.

Design of a scattering polarimeter for hard X-ray astronomy

International Nuclear Information System (INIS)

Costa, E.; Cinti, M.N.; Feroci, M.; Matt, G.; Rapisarda, M.

1995-01-01

The design of a new hard X-ray Compton scattering polarimeter based on scintillating fibre technology is presented and studied in detail by means of Monte Carlo calculations. Several different configurations and materials have been tested in order to optimise the sensitivity in the medium/high energy X-ray band. A high sensitivity over the energy band 20-200 keV is obtained for a two material configuration. The advantages deriving from employing a new scintillating material, the YAP (YAlO 3 ), are also discussed. (orig.)

A New Measurement of the Cosmic X-ray Background

International Nuclear Information System (INIS)

Moretti, A.

2009-01-01

I present a new analytical description of the cosmic X-ray background (CXRB) spectrum in the 1.5-200 keV energy band, obtained by combining the new measurement performed by the Swift X-ray telescope (XRT) with the recently published Swift burst alert telescope (BAT) measurement. A study of the cosmic variance in the XRT band (1.5-7 keV) is also presented. I find that the expected cosmic variance (expected from LogN-LogS) scales as Ω -0.3 (where Ω is the surveyed area) in very good agreement with XRT data.

Photoinduced molecular chirality probed by ultrafast resonant X-ray spectroscopy

Directory of Open Access Journals (Sweden)

Jérémy R. Rouxel

2017-07-01

Full Text Available Recently developed circularly polarized X-ray light sources can probe the ultrafast chiral electronic and nuclear dynamics through spatially localized resonant core transitions. We present simulations of time-resolved circular dichroism signals given by the difference of left and right circularly polarized X-ray probe transmission following an excitation by a circularly polarized optical pump with the variable time delay. Application is made to formamide which is achiral in the ground state and assumes two chiral geometries upon optical excitation to the first valence excited state. Probes resonant with various K-edges (C, N, and O provide different local windows onto the parity breaking geometry change thus revealing the enantiomer asymmetry.

Electronic structure study of wide band gap magnetic semiconductor (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} nanocrystals in paramagnetic and ferromagnetic phases

Energy Technology Data Exchange (ETDEWEB)

Dwivedi, G. D.; Chou, H.; Yang, K. S.; Jhong, D. J.; Chan, W. L. [Department of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan (China); Joshi, Amish G. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Kumar, Shiv; Ghosh, A. K. [Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Chatterjee, Sandip, E-mail: schatterji.app@iitbhu.ac.in [Department of Physics, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

2016-04-25

X-ray circular magnetic dichroism (XMCD), X-ray photoemission spectroscopy (XPS), and ultraviolet photoemission spectroscopy (UPS) techniques were used to study the electronic structure of nanocrystalline (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} near Fermi-level. XMCD results indicate that Mn{sup 3+} and Mn{sup 4+} spins are aligned parallel to each other at 20 K. The low M-H hysteresis curve measured at 5 K confirms ferromagnetic ordering in the (La{sub 0.6}Pr{sub 0.4}){sub 0.65}Ca{sub 0.35}MnO{sub 3} system. The low temperature valence band XPS indicates that coupling between Mn3d and O2p is enhanced and the electronic states near Fermi-level have been suppressed below T{sub C}. The valence band UPS also confirms the suppression of electronic states near Fermi-level below Curie temperature. UPS near Fermi-edge shows that the electronic states are almost absent below 0.5 eV (at 300 K) and 1 eV (at 115 K). This absence clearly demonstrates the existence of a wide band-gap in the system since, for hole-doped semiconductors, the Fermi-level resides just above the valence band maximum.

Iron 1s X-ray photoemission of Fe2O3

NARCIS (Netherlands)

Miedema, P. S.; Borgatti, F.; Offi, F.; Panaccione, G.; de Groot, F. M. F.

We present the Is X-ray photoemission spectrum of alpha-Fe2O3 in comparison with its 2p photoemission spectrum. We show that in case of transition metal oxides, because the 1s core hole is not affected by core hole spin-orbit coupling and almost not affected by core-valence multiplet effects, the Fe

Sixa-silicon x-ray array

International Nuclear Information System (INIS)

Taylor, I.

1995-01-01

Full text: The Spectrum-X-Gamma (SRG) satellite is scheduled for launch in 1995-96. Mission objectives include broad and narrow band imaging spectroscopy over a wide range of energies from the EUV through hard X-rays with an emphasis on studying galactic and extragalactic X-ray sources. Timing and moderate resolution spectroscopy can be performed with the solid state spectrometer SIXA (Silicon X-Ray Array), placed on the focal plane of the SODART telescope with total effective area of 1150 cm 2 at 6 keV (for f = 8 in telescope). The detector consists of 19 circular Si(Li) pixels, each with an active diameter of 9.2 min and thickness of 3 min. A radiative cooler will be used to bring the detector to the proper operating temperature (120-130 K). The energy range 0.5-20 keV is divided into 1024 channels of 20 eV size. Photons can be recorded with 30 μs time resolution and 160-200 eV (1-7 keV) energy resolution. Potential observing programmes (for e.g. time-resolved Iron Kα line spectroscopy) include stellar coronae, cataclysmic variables and X-ray binaries; accretion discs and coronae of neutron stars and black hole candidates; supernova remnants, active galactic nuclei and clusters of galaxies. (author)

Correlated X-ray/UV/optical emission and short-term variability in a Seyfert 1 galaxy NGC 4593

Science.gov (United States)

Pal, Main; Naik, Sachindra

2018-03-01

We present a detailed multifrequency analysis of an intense monitoring programme of Seyfert 1 galaxy NGC 4593 over a duration of nearly for a month with Swift observatory. We used 185 pointings to study the variability in six ultraviolet/optical and two soft (0.3-1.5 keV) and hard X-ray (1.5-10 keV) bands. The amplitude of the observed variability is found to decrease from high energy to low energy (X-ray to optical) bands. Count-count plots of ultraviolet/optical bands with hard X-rays clearly suggest the presence of a mixture of two major components: (i) highly variable component such as hard X-ray emission, and (ii) slowly varying disc-like component. The variations observed in the ultraviolet/optical emission are strongly correlated with the hard X-ray band. Cross-correlation analysis provides the lags for the longer wavelengths compared to the hard X-rays. Such lags clearly suggest that the changes in the ultraviolet/optical bands follow the variations in the hard X-ray band. This implies that the observed variation in longer wavelengths is due to X-ray reprocessing. Though, the measured lag spectrum (lag versus wavelength) is well described by λ4/3 as expected from the standard disc model, the observed lags are found to be longer than the predicted values from standard disc model. This implies that the actual size of the disc of NGC 4593 is larger than the estimated size of standard thin disc as reported in active galactic nuclei such as NGC 5548 and Fairall 9.

Optical investigation of the valency of Pr in Y1-xPrxBa2Cu3O7-δ

International Nuclear Information System (INIS)

Kircher, J.; Cardona, M.; Gopalan, S.; Habermeier, H.; Fuchs, D.

1991-01-01

We have investigated the dependence of the visible-ultraviolet dielectric function of Y 1-x Pr x Ba 2 Cu 3 O 7 on the Pr content x using rotating analyzer ellipsometry. Based on recently published band-structure calculations, we believe that the valency of Pr can be deduced from the optical properties in this spectral region. Interband transitions should shift to higher energies for Pr 4+ and to lower energies for Pr 3+ when compared to the optical spectra of YBa 2 Cu 3 O 7 . In the case of tetravalent Pr ions, transitions into unoccupied Pr 5d levels should be observable. Since the experimental energies for interband transitions shift down with increasing x and no additional structure can be seen, we conclude that Pr is trivalent in Y 1-x Pr x Ba 2 Cu 3 O 7

A broadband x-ray study of the Geminga pulsar with NuSTAR and XMM-Newton

DEFF Research Database (Denmark)

Mori, Kaya; Gotthelf, Eric V.; Dufour, Francois

2014-01-01

We report on the first hard X-ray detection of the Geminga pulsar above 10 keV using a 150 ks observation with the Nuclear Spectroscopic Telescope Array (NuSTAR) observatory. The double-peaked pulse profile of non-thermal emission seen in the soft X-ray band persists at higher energies. Broadband......V. The spectral hardening in non-thermal X-ray emission as well as spectral flattening between the optical and X-ray bands argue against the conjecture that a single power law may account for multi-wavelength non-thermal spectra of middle-aged pulsars....

Strongly correlated electrons at high pressure: an approach by inelastic X-Ray scattering; Electrons correles sous haute pression: une approche par diffusion inelastique des rayons X

Energy Technology Data Exchange (ETDEWEB)

Rueff, J.P

2007-06-15

Inelastic X-ray scattering (IXS) and associated methods has turn out to be a powerful alternative for high-pressure physics. It is an all-photon technique fully compatible with high-pressure environments and applicable to a vast range of materials. Standard focalization of X-ray in the range of 100 microns is typical of the sample size in the pressure cell. Our main aim is to provide an overview of experimental results obtained by IXS under high pressure in 2 classes of materials which have been at the origin of the renewal of condensed matter physics: strongly correlated transition metal oxides and rare-earth compounds. Under pressure, d and f-electron materials show behaviors far more complex that what would be expected from a simplistic band picture of electron delocalization. These spectroscopic studies have revealed unusual phenomena in the electronic degrees of freedom, brought up by the increased density, the changes in the charge-carrier concentration, the over-lapping between orbitals, and hybridization under high pressure conditions. Particularly we discuss about pressure induced magnetic collapse and metal-insulator transitions in 3d compounds and valence fluctuations phenomena in 4f and 5f compounds. Thanks to its superior penetration depth, chemical selectivity and resonant enhancement, resonant inelastic X-ray scattering has appeared extremely well suited to high pressure physics in strongly correlated materials. (A.C.)

X-ray emission from the Pleiades cluster

Science.gov (United States)

Agrawal, P. C.; Singh, K. P.; Riegler, G. R.

1983-01-01

The detection and identification of H0344+24, a new X-ray source located in the Pleiades cluster, is reported, based on observations made with HEAO A-2 low-energy detector 1 in the 0.15-3.0-keV energy band in August, 1977. The 90-percent-confidence error box for the new source is centered at 03 h 44.1 min right ascension (1950), near the center star of the 500-star Pleiades cluster, 25-eta-Tau. Since no likely galactic or extragalactic source of X-rays was found in a catalog search of the error-box region, identification of the source with the Pleiades cluster is considered secure. X-ray luminosity of the source is calculated to be about 10 to the 32nd ergs/sec, based on a distance of 125 pc. The X-ray characteristics of the Pleiades stars are discussed, and it is concluded that H0344+24 can best be explained as the integrated X-ray emission of all the B and F stars in the cluster.

Weak Hard X-Ray Emission from Two Broad Absorption Line Quasars Observed with NuStar: Compton-Thick Absorption or Intrinsic X-Ray Weakness?

Science.gov (United States)

Luo, B.; Brandt, W. N.; Alexander, D. M.; Harrison, F. A.; Stern, D.; Bauer, F. E.; Boggs, S. E.; Christensen, F. E.; Comastri, A.; Craig, W. W..;

WEAK HARD X-RAY EMISSION FROM TWO BROAD ABSORPTION LINE QUASARS OBSERVED WITH NuSTAR: COMPTON-THICK ABSORPTION OR INTRINSIC X-RAY WEAKNESS?

Energy Technology Data Exchange (ETDEWEB)

Luo, B.; Brandt, W. N. [Department of Astronomy and Astrophysics, 525 Davey Lab, The Pennsylvania State University, University Park, PA 16802 (United States); Alexander, D. M.; Hickox, R. [Department of Physics, Durham University, South Road, Durham DH1 3LE (United Kingdom); Harrison, F. A.; Fuerst, F.; Grefenstette, B. W.; Madsen, K. K. [Cahill Center for Astronomy and Astrophysics, California Institute of Technology, Pasadena, CA 91125 (United States); Stern, D. [Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109 (United States); Bauer, F. E. [Departamento de Astronomia y Astrofisica, Pontificia Universidad Catolica de Chile, Casilla 306, Santiago 22 (Chile); Boggs, S. E.; Craig, W. W. [Space Sciences Laboratory, University of California, Berkeley, CA 94720 (United States); Christensen, F. E. [DTU Space-National Space Institute, Technical University of Denmark, Elektrovej 327, DK-2800 Lyngby (Denmark); Comastri, A. [INAF-Osservatorio Astronomico di Bologna, Via Ranzani 1, I-40127 Bologna (Italy); Fabian, A. C. [Institute of Astronomy, Madingley Road, Cambridge CB3 0HA (United Kingdom); Farrah, D. [Department of Physics, Virginia Tech, Blacksburg, VA 24061 (United States); Fiore, F. [Osservatorio Astronomico di Roma, via Frascati 33, I-00040 Monteporzio Catone (Italy); Hailey, C. J. [Columbia Astrophysics Laboratory, Columbia University, New York, NY 10027 (United States); Matt, G. [Dipartimento di Matematica e Fisica, Universita degli Studi Roma Tre, via della Vasca Navale 84, I-00146 Roma (Italy); Ogle, P. [IPAC, California Institute of Technology, Mail Code 220-6, Pasadena, CA 91125 (United States); and others

2013-08-01

We present Nuclear Spectroscopic Telescope Array (NuSTAR) hard X-ray observations of two X-ray weak broad absorption line (BAL) quasars, PG 1004+130 (radio loud) and PG 1700+518 (radio quiet). Many BAL quasars appear X-ray weak, probably due to absorption by the shielding gas between the nucleus and the accretion-disk wind. The two targets are among the optically brightest BAL quasars, yet they are known to be significantly X-ray weak at rest-frame 2-10 keV (16-120 times fainter than typical quasars). We would expect to obtain Almost-Equal-To 400-600 hard X-ray ({approx}> 10 keV) photons with NuSTAR, provided that these photons are not significantly absorbed (N{sub H} {approx}< 10{sup 24} cm{sup -2}). However, both BAL quasars are only detected in the softer NuSTAR bands (e.g., 4-20 keV) but not in its harder bands (e.g., 20-30 keV), suggesting that either the shielding gas is highly Compton-thick or the two targets are intrinsically X-ray weak. We constrain the column densities for both to be N{sub H} Almost-Equal-To 7 Multiplication-Sign 10{sup 24} cm{sup -2} if the weak hard X-ray emission is caused by obscuration from the shielding gas. We discuss a few possibilities for how PG 1004+130 could have Compton-thick shielding gas without strong Fe K{alpha} line emission; dilution from jet-linked X-ray emission is one likely explanation. We also discuss the intrinsic X-ray weakness scenario based on a coronal-quenching model relevant to the shielding gas and disk wind of BAL quasars. Motivated by our NuSTAR results, we perform a Chandra stacking analysis with the Large Bright Quasar Survey BAL quasar sample and place statistical constraints upon the fraction of intrinsically X-ray weak BAL quasars; this fraction is likely 17%-40%.

Pulsed laser deposition of HfO{sub 2} thin films on indium zinc oxide: Band offsets measurements

Energy Technology Data Exchange (ETDEWEB)

Craciun, D.; Craciun, V., E-mail: valentin.craciun@inflpr.ro

2017-04-01

Highlights: • High quality amorphous IZO and HfO{sub 2} films were obtained by PLD technique. • XPS measurements were used to obtain the valence band alignment in HfO{sub 2}/IZO heterostructure. • A valence band offset (ΔE{sub V}) of 1.75 eV was obtained for the HfO{sub 2}/IZO heterostructure. • A conduction band offset (ΔE{sub C}) of 0.65 eV was estimated for the HfO{sub 2}/IZO heterostructure. - Abstract: One of the most used dielectric films for amorphous indium zinc oxide (IZO) based thin films transistor is HfO{sub 2}. The estimation of the valence band discontinuity (ΔE{sub V}) of HfO{sub 2}/IZO heterostructure grown using the pulsed laser deposition technique, with In/(In + Zn) = 0.79, was obtained from X-ray photoelectron spectroscopy (XPS) measurements. The binding energies of Hf 4d5, Zn 2p3 and In 3d5 core levels and valence band maxima were measured for thick pure films and for a very thin HfO{sub 2} film deposited on a thick IZO film. A value of ΔE{sub V} = 1.75 ± 0.05 eV was estimated for the heterostructure. Taking into account the measured HfO{sub 2} and IZO optical bandgap values of 5.50 eV and 3.10 eV, respectively, a conduction band offset ΔE{sub C} = 0.65 ± 0.05 eV in HfO{sub 2}/IZO heterostructure was then obtained.

Soft X-ray Focusing Telescope Aboard AstroSat: Design, Characteristics and Performance

DEFF Research Database (Denmark)

Singh, K; Stewart, G.; Westergaard, Niels Jørgen Stenfeldt

2017-01-01

The Soft X-ray focusing Telescope (SXT), India’s first X-ray telescope based on the principle of grazing incidence, was launched aboard the AstroSat and made operational on October 26, 2015. X-rays in the energy band of 0.3–8.0 keV are focussed on to a cooled charge coupled device thus providing ...

Resonant inelastic x-ray scattering and photoemission measurement of O2: Direct evidence for dependence of Rydberg-valence mixing on vibrational states in O 1s → Rydberg states

Science.gov (United States)

Gejo, T.; Oura, M.; Tokushima, T.; Horikawa, Y.; Arai, H.; Shin, S.; Kimberg, V.; Kosugi, N.

2017-07-01

High-resolution resonant inelastic x-ray scattering (RIXS) and low-energy photoemission spectra of oxygen molecules have been measured for investigating the electronic structure of Rydberg states in the O 1s → σ* energy region. The electronic characteristics of each Rydberg state have been successfully observed, and new assignments are made for several states. The RIXS spectra clearly show that vibrational excitation is very sensitive to the electronic characteristics because of Rydberg-valence mixing and vibronic coupling in O2. This observation constitutes direct experimental evidence that the Rydberg-valence mixing characteristic depends on the vibrational excitation near the avoided crossing of potential surfaces. We also measured the photoemission spectra of metastable oxygen atoms (O*) from O2 excited to 1s → Rydberg states. The broadening of the 4p Rydberg states of O* has been found with isotropic behavior, implying that excited oxygen molecules undergo dissociation with a lifetime of the order of 10 fs in 1s → Rydberg states.

Design studies for ITER x-ray diagnostics

International Nuclear Information System (INIS)

Hill, K.W.; Bitter, M.; von Goeler, S.; Hsuan, H.

1995-01-01

Concepts for adapting conventional tokamak x-ray diagnostics to the harsh radiation environment of ITER include use of grazing-incidence (GI) x-ray mirrors or man-made Bragg multilayer (ML) elements to remove the x-ray beam from the neutron beam, or use of bundles of glass-capillary x-ray ''light pipes'' embedded in radiation shields to reduce the neutron/gamma-ray fluxes onto the detectors while maintaining usable x-ray throughput. The x-ray optical element with the broadest bandwidth and highest throughput, the GI mirror, can provide adequate lateral deflection (10 cm for a deflected-path length of 8 m) at x-ray energies up to 12, 22, or 30 keV for one, two, or three deflections, respectively. This element can be used with the broad band, high intensity x-ray imaging system (XIS), the pulseheight analysis (PHA) survey spectrometer, or the high resolution Johann x-ray crystal spectrometer (XCS), which is used for ion-temperature measurement. The ML mirrors can isolate the detector from the neutron beam with a single deflection for energies up to 50 keV, but have much narrower bandwidth and lower x-ray power throughput than do the GI mirrors; they are unsuitable for use with the XIS or PHA, but they could be used with the XCS; in particular, these deflectors could be used between ITER and the biological shield to avoid direct plasma neutron streaming through the biological shield. Graded-d ML mirrors have good reflectivity from 20 to 70 keV, but still at grazing angles (<3 mrad). The efficiency at 70 keV for double reflection (10 percent), as required for adequate separation of the x-ray and neutron beams, is high enough for PHA requirements, but not for the XIS. Further optimization may be possible

THE 22 MONTH SWIFT-BAT ALL-SKY HARD X-RAY SURVEY

International Nuclear Information System (INIS)

Tueller, J.; Baumgartner, W. H.; Markwardt, C. B.; Skinner, G. K.; Mushotzky, R. F.; Barthelmy, S.; Cummings, J.; Gehrels, N.; Holland, S.; Ajello, M.; Beardmore, A.; Evans, P.; Godet, O.; Brandt, W. N.; Burrows, D.; Grupe, D.; Chincarini, G.; Campana, S.; Cusumano, G.; Fenimore, E.

2010-01-01

We present the catalog of sources detected in the first 22 months of data from the hard X-ray survey (14-195 keV) conducted with the Burst Alert Telescope (BAT) coded mask imager on the Swift satellite. The catalog contains 461 sources detected above the 4.8σ level with BAT. High angular resolution X-ray data for every source from Swift-XRT or archival data have allowed associations to be made with known counterparts in other wavelength bands for over 97% of the detections, including the discovery of ∼30 galaxies previously unknown as active galactic nuclei and several new Galactic sources. A total of 266 of the sources are associated with Seyfert galaxies (median redshift z ∼ 0.03) or blazars, with the majority of the remaining sources associated with X-ray binaries in our Galaxy. This ongoing survey is the first uniform all-sky hard X-ray survey since HEAO-1 in 1977. Since the publication of the nine-month BAT survey we have increased the number of energy channels from four to eight and have substantially increased the number of sources with accurate average spectra. The BAT 22 month catalog is the product of the most sensitive all-sky survey in the hard X-ray band, with a detection sensitivity (4.8σ) of 2.2 x 10 -11 erg cm -2 s -1 (1 mCrab) over most of the sky in the 14-195 keV band.

The ultraviolet to X-ray continua of BL Lac objects

International Nuclear Information System (INIS)

George, I.M.; Warwick, R.S.; McHardy, I.M.

1988-01-01

The results from EXOSAT observations of three X-ray bright BL Lacertae objects, Mrk 501, 1218 + 304 and Mrk 180 are presented. All three sources have soft power-law X-ray spectra with low-energy cut-offs consistent with absorption in the line-of-sight gas column density through our own galaxy. The three objects also exhibit significant spectral variability in the X-ray band on time-scales ranging from a few days to a year. In each case, X-ray flux and spectral index appear to be correlated, in the sense that the X-ray spectrum hardens as the source brightens. The intrinsic ultraviolet to X-ray spectrum of these and several other X-ray bright BL Lac objects can be modelled as a power-law continuum of energy index ∼1.0 below about 0.1 keV, above which the spectral slope steepens. (author)

Performance of the PRAXyS X-ray polarimeter

Energy Technology Data Exchange (ETDEWEB)

Iwakiri, W.B., E-mail: wataru.iwakiri@riken.jp [RIKEN Nishina Center, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Black, J.K. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Rock Creek Scientific, 1400 East-West Hwy, Silver Spring, MD 20910 (United States); Cole, R. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Enoto, T. [The Hakubi Center for Advanced Research, Kyoto University, Kyoto 606-8302 (Japan); Department of Astronomy, Kyoto University, Kitashirakawa-Oiwake-cho, Sakyo-ku, Kyoto 606-8502 (Japan); Hayato, A. [RIKEN Nishina Center, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Hill, J.E.; Jahoda, K. [NASA Goddard Space Flight Center, Greenbelt, MD 20771 (United States); Kaaret, P. [University of Iowa, Iowa City, IA 52242 (United States); Kitaguchi, T. [Department of Physical Science, Hiroshima University, 1-3-1 Kagamiyama, Higashi-Hiroshima, Hiroshima 739-8526 (Japan); Kubota, M. [Department of Physics, Tokyo University of Science, 3-1 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan. (Japan); RIKEN Nishina Center, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Marlowe, H.; McCurdy, R. [University of Iowa, Iowa City, IA 52242 (United States); Takeuchi, Y. [Department of Physics, Tokyo University of Science, 3-1 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan. (Japan); RIKEN Nishina Center, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Tamagawa, T. [RIKEN Nishina Center, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan); Department of Physics, Tokyo University of Science, 3-1 Kagurazaka, Shinjuku-ku, Tokyo 162-8601, Japan. (Japan)

2016-12-01

The performance of the Time Projection Chamber (TPC) polarimeter for the Polarimeter for Relativistic Astrophysical X-ray Sources (PRAXyS) Small Explorer was evaluated using polarized and unpolarized X-ray sources. The PRAXyS mission will enable exploration of the universe through X-ray polarimetry in the 2–10 keV energy band. We carried out performance tests of the polarimeter at the Brookhaven National Laboratory, National Synchrotron Light Source (BNL-NSLS) and at NASA's Goddard Space Flight Center. The polarimeter was tested with linearly polarized, monochromatic X-rays at 11 different energies between 2.5 and 8.0 keV. At maximum sensitivity, the measured modulation factors at 2.7, 4.5 and 8.0 keV are 27%, 43% and 59%, respectively and the measured angle of polarization is consistent with the expected value at all energies. Measurements with a broadband, unpolarized X-ray source placed a limit of less than 1% on false polarization in the PRAXyS polarimeter.

Performance of the PRAXyS X-ray polarimeter

Science.gov (United States)

Iwakiri, W. B.; Black, J. K.; Cole, R.; Enoto, T.; Hayato, A.; Hill, J. E.; Jahoda, K.; Kaaret, P.; Kitaguchi, T.; Kubota, M.; Marlowe, H.; McCurdy, R.; Takeuchi, Y.; Tamagawa, T.

2016-12-01

The performance of the Time Projection Chamber (TPC) polarimeter for the Polarimeter for Relativistic Astrophysical X-ray Sources (PRAXyS) Small Explorer was evaluated using polarized and unpolarized X-ray sources. The PRAXyS mission will enable exploration of the universe through X-ray polarimetry in the 2-10 keV energy band. We carried out performance tests of the polarimeter at the Brookhaven National Laboratory, National Synchrotron Light Source (BNL-NSLS) and at NASA's Goddard Space Flight Center. The polarimeter was tested with linearly polarized, monochromatic X-rays at 11 different energies between 2.5 and 8.0 keV. At maximum sensitivity, the measured modulation factors at 2.7, 4.5 and 8.0 keV are 27%, 43% and 59%, respectively and the measured angle of polarization is consistent with the expected value at all energies. Measurements with a broadband, unpolarized X-ray source placed a limit of less than 1% on false polarization in the PRAXyS polarimeter.

Theory-driven design of high-valence metal sites for water oxidation confirmed using in situ soft X-ray absorption

Science.gov (United States)

Zheng, Xueli; Zhang, Bo; de Luna, Phil; Liang, Yufeng; Comin, Riccardo; Voznyy, Oleksandr; Han, Lili; García de Arquer, F. Pelayo; Liu, Min; Dinh, Cao Thang; Regier, Tom; Dynes, James J.; He, Sisi; Xin, Huolin L.; Peng, Huisheng; Prendergast, David; Du, Xiwen; Sargent, Edward H.

2018-02-01

The efficiency with which renewable fuels and feedstocks are synthesized from electrical sources is limited at present by the sluggish oxygen evolution reaction (OER) in pH-neutral media. We took the view that generating transition-metal sites with high valence at low applied bias should improve the activity of neutral OER catalysts. Here, using density functional theory, we find that the formation energy of desired Ni4+ sites is systematically modulated by incorporating judicious combinations of Co, Fe and non-metal P. We therefore synthesized NiCoFeP oxyhydroxides and probed their oxidation kinetics with in situ soft X-ray absorption spectroscopy (sXAS). In situ sXAS studies of neutral-pH OER catalysts indicate ready promotion of Ni4+ under low overpotential conditions. The NiCoFeP catalyst outperforms IrO2 and retains its performance following 100 h of operation. We showcase NiCoFeP in a membrane-free CO2 electroreduction system that achieves a 1.99 V cell voltage at 10 mA cm-2, reducing CO2 into CO and oxidizing H2O to O2 with a 64% electricity-to-chemical-fuel efficiency.

Theory-driven design of high-valence metal sites for water oxidation confirmed using in situ soft X-ray absorption.

Science.gov (United States)

Zheng, Xueli; Zhang, Bo; De Luna, Phil; Liang, Yufeng; Comin, Riccardo; Voznyy, Oleksandr; Han, Lili; García de Arquer, F Pelayo; Liu, Min; Dinh, Cao Thang; Regier, Tom; Dynes, James J; He, Sisi; Xin, Huolin L; Peng, Huisheng; Prendergast, David; Du, Xiwen; Sargent, Edward H

2018-02-01

The efficiency with which renewable fuels and feedstocks are synthesized from electrical sources is limited at present by the sluggish oxygen evolution reaction (OER) in pH-neutral media. We took the view that generating transition-metal sites with high valence at low applied bias should improve the activity of neutral OER catalysts. Here, using density functional theory, we find that the formation energy of desired Ni 4+ sites is systematically modulated by incorporating judicious combinations of Co, Fe and non-metal P. We therefore synthesized NiCoFeP oxyhydroxides and probed their oxidation kinetics with in situ soft X-ray absorption spectroscopy (sXAS). In situ sXAS studies of neutral-pH OER catalysts indicate ready promotion of Ni 4+ under low overpotential conditions. The NiCoFeP catalyst outperforms IrO 2 and retains its performance following 100 h of operation. We showcase NiCoFeP in a membrane-free CO 2 electroreduction system that achieves a 1.99 V cell voltage at 10 mA cm -2 , reducing CO 2 into CO and oxidizing H 2 O to O 2 with a 64% electricity-to-chemical-fuel efficiency.

The first multi-wavelength campaign of AXP 4U 0142+61 from radio to hard X-rays

NARCIS (Netherlands)

den Hartog, P.R.; Kuiper, L.; Hermsen, W.; Rea, N.; Durant, M.; Stappers, B.; Kaspi, V.M.; Dib, R.

2007-01-01

For the first time a quasi-simultaneous multi-wavelength campaign has been performed on an Anomalous X-ray Pulsar from the radio to the hard X-ray band. 4U 0142+61 was an INTEGRAL target for 1 Ms in July 2005. During these observations it was also observed in the X-ray band with Swift and RXTE, in

Discovery of x-rays and its impact on the development of physics

International Nuclear Information System (INIS)

Sirdeshmukh, D.B.

1996-01-01

Roentgen's discovery of x-rays is discussed. Roentgen's discovery was important not only for the property of transmission of x-rays, which immediately resulted in the new field of radiology, but also because it led to several experiments which had a great impact on the development of physics. Laue's discovery of x-ray diffraction in turn led to the development of x-ray crystallography and x-ray spectroscopy. The contributions of Barkla, Moseley and Siegbahn are discussed. The experiments of Duane and Hunt on continuous x-rays and Compton on scattering of x-rays lent support to the photon nature of radiation. In recent times, the line-widths of x-ray emission lines have given information about the band structure of solids. (author). 21 refs., 6 figs

X-ray/UV variability and the origin of soft X-ray excess emission from II Zw 177

Science.gov (United States)

Pal, Main

We study a detailed broad-band X-ray/UV emission from the narrow line Seyfert 1 galaxy II Zw 177 based on two XMM-Newton and single Swift/XRT observations. Both XMM-Newton observations show the soft X-ray excess emission below 2 keV when the best-fit 2 - 10 keV power law is extrapolated down to 0.3 keV. We find the blurred reflection from an ionized accretion disc and Comptonized disc emission both describe the observed soft excess well. We find a remarkable trend of decreasing UV flux with increasing soft X-ray excess and power law emission. We suggest that this could be due to that the external edge of corona hide a fraction of accretion disk. Co-Author: Prof. Gulab C. Dewangan (IUCAA), Prof. Ranjeev Misra (IUCAA), Pramod Kumar (Nanded university)

X-ray outbursts and high-state episodes of HETE J1900.1-2455

Science.gov (United States)

Šimon, Vojtěch

2018-06-01

HETE J1900.1-2455 is an ultra-compact low-mass X-ray binary that underwent a long-lasting (about 10 yr) active state. The analysis presented here of its activity uses the observations of RXTE/ASM, Swift/BAT, and ISS/MAXI for investigating this active state and the relation of time evolution of fluxes in the hard and medium X-ray bands. We show that the variations of the flux of HETE J1900.1-2455 on the time-scales of days and weeks have the form both of the outbursts and occasional high-state episodes. These outbursts are accompanied by the large changes of the hardness of the spectrum in the surroundings of the peaks of their soft X-ray flux. The very strong peaks of these outbursts occur in the soft X-ray band (2-4 keV) and are accompanied by a large depression in the 15-50 keV band flux. We interpret these events as an occasional occurrence of a thermal-viscous instability of the accretion disc that gives rise to the outbursts similar to those in the soft X-ray transients. On the other hand, the 2-4 and the 15-50 keV band fluxes are mutually correlated in the high-state episodes, much longer than the outbursts. In the interpretation, the episodes of the X-ray high states of HETE J1900.1-2455 during the active state bear some analogy with the standstills in the Z Cam type of cataclysmic variables.

X-ray Observation of XTE J2012+381 during the 1998 Outburst

Indian Academy of Sciences (India)

The outburst of X-ray transient source XTE J2012+381 was detected by the RXTE All-Sky Monitor on 1998 May 24th. Following the outburst, X-ray observations of the source were made in the 2-18keV energy band with the Pointed Proportional Counters of the Indian X-ray Astronomy Experiment (IXAE) on-board the Indian ...

Many-body effects on the x-ray spectra of metals

International Nuclear Information System (INIS)

Satpathy, S.S.

1982-01-01

The effects of band structure, of a solid surface, of temperature, and of disorder on the many-electron x-ray spectra of metals are evaluated in a change-of-mean-field approximation using a one-dimensional nearest-neighbor tight-binding model of a metal. The x-ray spectral shapes are determined by both the band structure and the final-state interactions. The effect of the band being non-free-electron-like is not felt at the x-ray threshold, but away from it such effects are noticeable. When the core hole is created at the surface, the spectra at the edge exhibit a Nozieres-de Dominicis-type singularity with the appropriate surface phase-shifts. At energies away from the edge, the one-particle effects are prominent with the x-ray emission and absorption spectra closely reflecting the local one-electron density of states. The recoil spectrum of a Fermi sea at a non-zero temperature has less asymmetry than the zero-temperature case. It was found that at ordinary temperatures the reduction of the asymmetry due to the thermal distribution of one-electron states is not very significant. Finally, using a one-dimensional Anderson model, the effect of lattice disorder on the x-ray absorption spectra is studied for the first time. There are two effects: (1) the strong infrared divergence peak is gradually quenched as disorder is increased, and (2) the threshold is broadened because the threshold energies for absorption at different sites in the crystal depend on the varying local lattice environment. It is proposed that the x-ray spectra may be useful as a tool for studying the degree of electron localization in disordered many-electron systems

Distributions of valence quarks in hadrons at small x in QCD

International Nuclear Information System (INIS)

Ioffe, B.L.; Kaidalov, A.B.

1984-01-01

Valence u- and d-quark distributions in nucleon and pion at small x (x=-q 2 /2ν is the fraction of the momentum carried by quarks) corresponding to rho and ω Regge pole exchange have been obtained on the basis of the QCD sum rule me-thod

X-ray filter for x-ray powder diffraction

Science.gov (United States)

Sinsheimer, John Jay; Conley, Raymond P.; Bouet, Nathalie C. D.; Dooryhee, Eric; Ghose, Sanjit

2018-01-23

Technologies are described for apparatus, methods and systems effective for filtering. The filters may comprise a first plate. The first plate may include an x-ray absorbing material and walls defining first slits. The first slits may include arc shaped openings through the first plate. The walls of the first plate may be configured to absorb at least some of first x-rays when the first x-rays are incident on the x-ray absorbing material, and to output second x-rays. The filters may comprise a second plate spaced from the first plate. The second plate may include the x-ray absorbing material and walls defining second slits. The second slits may include arc shaped openings through the second plate. The walls of the second plate may be configured to absorb at least some of second x-rays and to output third x-rays.

Detection of X-ray due to gun arcing of high power klystron

International Nuclear Information System (INIS)

Vogel, Vladimir; Matsumoto, Shuji

2004-01-01

X-ray due to a klystron gun arching was monitored by a detector consists of a plastic scintillation fiber and a photo-multiplier. Observation of the X-ray was done during the processing run of an X-band klystron. A clear signal of X-ray burst is observed when the gun arcing occurs. Possibility of the fast protection for a pulse modulator from the gun arcing is discussed. (author)

A quasi-monochromatic X-rays source for art painting pigments investigation

Energy Technology Data Exchange (ETDEWEB)

Albertin, F.; Franconieri, A.; Gambaccini, M.; Petrucci, F.; Chiozzi, S. [University of Ferrara, Department of Physics and INFN, Ferrara (Italy); Moro, D. [University of Padova, Department of Physics, Padova (Italy); LNL - INFN, Legnaro, Padova (Italy)

2009-08-15

Monochromatic X-ray sources can be used for several applications, like in medicine or in studying our cultural heritage. We are investigating imaging systems based on a tuneable energy band X-ray source, to obtain an element mapping of painting layers using the K-edge technique. The narrow energy band beams are obtained with conventional X-ray source via Bragg diffraction on a mosaic crystal; such an analysis has been performed at different diffraction angles, tuning the energy to investigate spectra of interest from the artistic point of view, like zinc and copper. In this paper the characteristics of the system in terms of fluence rate are reported, and first results of this technique on canvas samples and painting are presented. (orig.)

Soft-x-ray emission and the local p-type partial density of electronic states in Y2O3: Experiment and theory

International Nuclear Information System (INIS)

Mueller, D.R.; Ederer, D.L.; van Ek, J.; OBrien, W.L.; Dong, Q.Y.; Jia, J.; Callcott, T.A.

1996-01-01

Photon-excited yttrium M IV,V , and electron-excited oxygen K x-ray emission spectra for yttrium oxide are presented. It is shown that, as in the case of yttrium metal, the decay of M IV vacancies does not contribute substantially to the oxide M IV,V emission. The valence emission is interpreted in a one-electron picture as a measure of the local p-type partial density of states. The yttrium and oxygen valence emission bands are very similar and strongly resemble published photoelectron spectra. Using local-density approximation electronic structure calculations, we show that the broadening of the Y-4p signal in yttrium oxide relative to Y metal are due to two inequivalent yttrium sites in Y 2 O 3 . Features present in the oxide, but not the metal spectrum, are the result of overlap (hybridization) between the Y-4p wave function and states in the oxygen 2s subband. copyright 1996 The American Physical Society

Decay of Wannier-Mott excitons interacting with acoustic phonon in semiconductors with a degenerate valence band

International Nuclear Information System (INIS)

Nguyen Toan Thang; Nguyen Ai Viet; Nguyen Hong Quang

1987-06-01

Decay probabilities of light and heavy excitons interacting with acoustic phonons in cubic semiconductors with a degenerate valence band are calculated. The numerical results for GaAs showed that the decay probability of the light exciton is much greater than that of the heavy one. (author). 10 refs, 1 fig

X-ray fluorescence imaging with polycapillary X-ray optics

International Nuclear Information System (INIS)

Yonehara, Tasuku; Yamaguchi, Makoto; Tsuji, Kouichi

2010-01-01

X-ray fluorescence spectrometry imaging is a powerful tool to provide information about the chemical composition and elemental distribution of a specimen. X-ray fluorescence spectrometry images were conventionally obtained by using a μ-X-ray fluorescence spectrometry spectrometer, which requires scanning a sample. Faster X-ray fluorescence spectrometry imaging would be achieved by eliminating the process of sample scanning. Thus, we developed an X-ray fluorescence spectrometry imaging instrument without sample scanning by using polycapillary X-ray optics, which had energy filter characteristics caused by the energy dependence of the total reflection phenomenon. In the present paper, we show that two independent straight polycapillary X-ray optics could be used as an energy filter of X-rays for X-ray fluorescence. Only low energy X-rays were detected when the angle between the two optical axes was increased slightly. Energy-selective X-ray fluorescence spectrometry images with projection mode were taken by using an X-ray CCD camera equipped with two polycapillary optics. It was shown that Fe Kα (6.40 keV) and Cu Kα (8.04 keV) could be discriminated for Fe and Cu foils.

X-band Linac for a 6 MeV dual-head radiation therapy gantry

Energy Technology Data Exchange (ETDEWEB)

Lee, Seung Hyun; Shin, Seung-Wook; Lee, Jongchul; Kim, Hui-Su [WCU Department of Energy Science, Suwon 440-746 (Korea, Republic of); Lee, Byeong-No; Lee, Byung-Chul [Radiation Instrumentation Research Division, Korea Atomic Energy Research Institute, Jeongeup 56212 (Korea, Republic of); Park, Hyung-dal; Song, Ki-back [Radiation Technology eXcellence (RTX), Daejeon 305-500 (Korea, Republic of); Song, Ho-seung; Mun, Sangchul; Ha, Donghyup [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Chai, Jong-Seo, E-mail: jschai@skku.edu [School of Information and Communication Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2017-04-21

We developed a design for a 6 MeV X-band linear accelerator for radiation therapy in a dual-head gantry layout. The dual-head gantry has two linacs that can be operated independently. Each X-band linac accelerates electron bunches using high-power RF and generates X-rays for radiation therapy. It requires a versatile RF system and pulse sequence to accomplish various radiation therapy procedures. The RF system consists of 9.3 GHz, 2 MW X-band magnetron and associated RF transmission components. A test linac was assembled and operated to characterize its RF performance without beam. This paper presents these results along with a description of the gantry linacs and their operational requirements.

Diversity of soft X-ray spectra in quasars

International Nuclear Information System (INIS)

Elvis, M.; Wilkes, B.J.; Tananbaum, H.

1985-01-01

Soft X-ray spectra for three quasars obtained with the Einstein Imaging Proportional Counter covering the 0.1-4.0 keV band are reported. Power-law fits to these spectra have best-fit energy indices of 1.2 +0.6 or -0.2, for the quasar NAB 0205 + 024, 0.6 +0.3 or -0.2 for the quasar B2 1028 + 313, and 2.2 + or -0.4 for the quasar PG 1211 + 143. None of the quasars shows any evidence for a column density of cold matter in excess of the galactic values. The derived spectra demonstrate that there is no single universal power law slope for quasar X-ray spectra. The implications of these results for the X-ray background, X-ray continuum emission mechanisms, and the production of the optical/UV emission lines are briefly discussed. 46 references

Probing the Cosmic X-Ray and MeV Gamma-Ray Background Radiation through the Anisotropy

Energy Technology Data Exchange (ETDEWEB)

Inoue, Yoshiyuki [Stanford Univ., CA (United States). Kavli Inst. for Particle Astrophysics and Cosmology; SLAC National Accelerator Lab., Menlo Park, CA (United States); Murase, Kohta [Inst. for Advanced Study, Princeton, NJ (United States). School of Natural Sciences; Madejski, Grzegorz M. [Stanford Univ., CA (United States). Kavli Inst. for Particle Astrophysics and Cosmology; SLAC National Accelerator Lab., Menlo Park, CA (United States); Uchiyama, Yasunobu [Stanford Univ., CA (United States). Kavli Inst. for Particle Astrophysics and Cosmology; SLAC National Accelerator Lab., Menlo Park, CA (United States); Rikkyo Univ., Tokyo (Japan). Dept. of Physics

2013-09-24

While the cosmic soft X-ray background is very likely to originate from individual Seyfert galaxies, the origin of the cosmic hard X-ray and MeV gamma-ray background is not fully understood. It is expected that Seyferts including Compton thick population may explain the cosmic hard X-ray background. At MeV energy range, Seyferts having non-thermal electrons in coronae above accretion disks or MeV blazars may explain the background radiation. We propose that future measurements of the angular power spectra of anisotropy of the cosmic X-ray and MeV gamma-ray backgrounds will be key to deciphering these backgrounds and the evolution of active galactic nuclei (AGNs). As AGNs trace the cosmic large-scale structure, spatial clustering of AGNs exists. We show that e-ROSITA will clearly detect the correlation signal of unresolved Seyferts at 0.5-2 keV and 2-10 keV bands and will be able to measure the bias parameter of AGNs at both bands. Once the future hard X-ray all sky satellites achieve the sensitivity better than 10^-12 erg/cm²/s^-1 at 10-30 keV or 30-50 keV - although this is beyond the sensitivities of current hard X-ray all sky monitors - angular power spectra will allow us to independently investigate the fraction of Compton-thick AGNs in all Seyferts. We also find that the expected angular power spectra of Seyferts and blazars in the MeV range are different by about an order of magnitude, where the Poisson term, so-called shot noise, is dominant. Current and future MeV instruments will clearly disentangle the origin of the MeV gamma-ray background through the angular power spectrum.

Probing the cosmic x-ray and MeV gamma ray background radiation through the anisotropy

Energy Technology Data Exchange (ETDEWEB)

Inoue, Yoshiyuki [Stanford Univ., CA (United States); Murase, Kohta [Inst. for Advanced Study, Princeton, NJ (United States); Madejski, Grzegorz M. [Stanford Univ., CA (United States); Uchiyama, Yasunobu [Stanford Univ., CA (United States); Rikkyo Univ., Tokyo (Japan)

2013-09-24

While the cosmic soft X-ray background is very likely to originate from individual Seyfert galaxies, the origin of the cosmic hard X-ray and MeV gamma-ray background is not fully understood. It is expected that Seyferts including Compton thick population may explain the cosmic hard X-ray background. At MeV energy range, Seyferts having non-thermal electrons in coronae above accretion disks or MeV blazars may explain the background radiation. We propose that future measurements of the angular power spectra of anisotropy of the cosmic X-ray and MeV gamma-ray backgrounds will be key to deciphering these backgrounds and the evolution of active galactic nuclei (AGNs). As AGNs trace the cosmic large-scale structure, spatial clustering of AGNs exists. We show that e-ROSITA will clearly detect the correlation signal of unresolved Seyferts at 0.5-2 keV and 2-10 keV bands and will be able to measure the bias parameter of AGNs at both bands. Once future hard X-ray all sky satellites achieve a sensitivity better than 10–12 erg cm–2 s–1 at 10-30 keV or 30-50 keV—although this is beyond the sensitivities of current hard X-ray all sky monitors—angular power spectra will allow us to independently investigate the fraction of Compton-thick AGNs in all Seyferts. We also find that the expected angular power spectra of Seyferts and blazars in the MeV range are different by about an order of magnitude, where the Poisson term, so-called shot noise, is dominant. Current and future MeV instruments will clearly disentangle the origin of the MeV gamma-ray background through the angular power spectrum.

Bandgap engineering of the Lu{sub x}Y{sub 1−x}PO{sub 4} mixed crystals

Energy Technology Data Exchange (ETDEWEB)

Levushkina, V.S., E-mail: viktoriia.levushkina@ut.ee [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Physics Faculty, Moscow State University, Leninskiye Gory 1-2, 11991 Moscow (Russian Federation); Spassky, D.A. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); Skobeltsyn Institute of Nuclear Physics, Moscow State University, Leninskiye Gory 1-2, 11991 Moscow (Russian Federation); Aleksanyan, E.M. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); A. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Alikhanyan Yeghbayrneri St. 2, 0036 Yerevan (Armenia); Brik, M.G. [Institute of Physics, University of Tartu, Ravila 14c, 50411 Tartu (Estonia); College of Sciences, Chongqing University of Posts and Telecommunications, 400065 Chongqing (China); Institute of Physics, Jan Dlugosz University, Armii Krajowej 13/15, PL-42200 Czestochowa (Poland); Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, 02-668 Warsaw (Poland); Tretyakova, M.S.; Zadneprovski, B.I. [Central Research and Development Institute of Chemistry and Mechanics, Nagatinskaya St. 16a, 115487 Moscow (Russian Federation); Belsky, A.N. [Institute of Light and Matter, CNRS, University Lyon1, 69622 Villeurbanne (France)

2016-03-15

Bandgap modification of the Lu{sub x}Y{sub 1−x}PO{sub 4} mixed crystals has been studied by thermostimulated luminescence (TSL) and ab-initio calculation methods. Doping of Lu{sub x}Y{sub 1−x}PO{sub 4} with Ce{sup 3+} allowed to follow up the changes of electron traps depth, caused by the modification of the bottom of conduction band. The observed gradual shift of the most intensive TSL peaks to higher temperatures with increase of x value was connected with the high-energy shift of the conduction band bottom. According to the band structure calculations the bottom of the conduction band is formed by the 5d and 4d states of Lu and Y, respectively. Therefore, substitution of one cation by another is responsible for the observed variation of the electronic and optical properties. Doping with Eu{sup 3+} was used to study the modification of the hole traps and the top of the valence band in Lu{sub x}Y{sub 1−x}PO{sub 4}. The independence of the TSL peaks position on x value in Lu{sub x}Y{sub 1−x}PO{sub 4}:Eu{sup 3+} allows to conclude that the top of the valence band is negligibly affected by the cation substitution. According to the band structure calculations the top of the valence band is formed by the O 2p electronic states, which are not affected by the cation substitution. The resulting increase of the bandgap with x value is confirmed by the data of ab-initio calculations. - Highlights: • Band structure modification with x in Lu{sub x}Y{sub 1−x}PO{sub 4}:RE{sup 3+} (RE=Ce, Eu) is studied. • Depth of electron traps is affected by the bandgap modification. • Increase of bandgap with x is due to the shift of conduction band bottom.

Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy

Science.gov (United States)

Imura, Masataka; Tsuda, Shunsuke; Takeda, Hiroyuki; Nagata, Takahiro; Banal, Ryan G.; Yoshikawa, Hideki; Yang, AnLi; Yamashita, Yoshiyuki; Kobayashi, Keisuke; Koide, Yasuo; Yamaguchi, Tomohiro; Kaneko, Masamitsu; Uematsu, Nao; Wang, Ke; Araki, Tsutomu; Nanishi, Yasushi

2018-03-01

The surface and bulk electronic structures of In0.7Ga0.3N epilayers are investigated by angle-resolved hard X-ray photoelectron spectroscopy (HX-PES) combined with soft X-PES. The unintentionally and Mg-doped In0.7Ga0.3N (u-In0.7Ga0.3N and In0.7Ga0.3N:Mg, respectively) epilayers are grown by radio-frequency plasma-assisted molecular beam epitaxy. Here three samples with different Mg concentrations ([Mg] = 0, 7 × 1019, and 4 × 1020 cm-3) are chosen for comparison. It is found that a large downward energy band bending exists in all samples due to the formation of a surface electron accumulation (SEA) layer. For u-In0.7Ga0.3N epilayer, band bending as large as 0.8 ± 0.05 eV occurs from bulk to surface. Judged from the valence band spectral edge and numerical analysis of energy band with a surface quantum well, the valence band maximum (VBM) with respect to Fermi energy (EF) level in the bulk is determined to be 1.22 ± 0.05 eV. In contrast, for In0.7Ga0.3N:Mg epilayers, the band bending increases and the VBM only in the bulk tends to shift toward the EF level owing to the Mg acceptor doping. Hence, the energy band is considered to exhibit a downward bending structure due to the coexistence of the n+ SEA layer and Mg-doped p layer formed in the bulk. When [Mg] changes from 7 × 1019 to 4 × 1020 cm-3, the peak split occurs in HX-PES spectra under the bulk sensitive condition. This result indicates that the energy band forms an anomalous downward bending structure with a singular point due to the generation of a thin depleted region at the n+ p interface. For In0.7Ga0.3N:Mg epilayers, the VBM in the bulk is assumed to be slightly lower than EF level within 0.1 eV.

The 105-Month Swift-BAT All-Sky Hard X-Ray Survey

Science.gov (United States)

Oh, Kyuseok; Koss, Michael; Markwardt, Craig B.; Schawinski, Kevin; Baumgartner, Wayne H.; Barthelmy, Scott D.; Cenko, S. Bradley; Gehrels, Neil; Mushotzky, Richard; Petulante, Abigail;

Electronic structure and optical properties of CdS{sub x}Se{sub 1−x} solid solution nanostructures from X-ray absorption near edge structure, X-ray excited optical luminescence, and density functional theory investigations

Energy Technology Data Exchange (ETDEWEB)

Murphy, M. W. [DESY (Deutsches Elektronen-Synchrotron), FS-PEX, Notkestrasse 85, 22607 Hamburg (Germany); Yiu, Y. M., E-mail: yyiu@uwo.ca; Sham, T. K. [Department of Chemistry, University of Western Ontario, London, ON N6A5B7 (Canada); Ward, M. J. [Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States); Liu, L. [Institute of Functional Nano and Soft Materials (FUNSOM) and Soochow University-Western University Center for Synchrotron Radiation Research, Soochow University, Suzhou, Jiangsu, 215123 (China); Hu, Y. [Canadian Light Source, University of Saskatchewan, Saskatoon, SK S7N2V3 (Canada); Zapien, J. A. [Center Of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Liu, Yingkai [Institute of Physics and Electronic Information, Yunnan Normal University, Kunming, Yunnan, 650500 (China)

2014-11-21

The electronic structure and optical properties of a series of iso-electronic and iso-structural CdS{sub x}Se{sub 1−x} solid solution nanostructures have been investigated using X-ray absorption near edge structure, extended X-ray absorption fine structure, and X-ray excited optical luminescence at various absorption edges of Cd, S, and Se. It is found that the system exhibits compositions, with variable local structure in-between that of CdS and CdSe accompanied by tunable optical band gap between that of CdS and CdSe. Theoretical calculation using density functional theory has been carried out to elucidate the observations. It is also found that luminescence induced by X-ray excitation shows new optical channels not observed previously with laser excitation. The implications of these observations are discussed.

X-ray dichroism of rare earth materials

International Nuclear Information System (INIS)

Goedkoop, J.B.

1989-01-01

The theme of this thesis is the investigation of the strong polarization dependende, or dichroism, that occur in the X-ray absorption spectra of rare earth materials. The rare earth elements distinguish themselves from the other elements through the behaviour of the 4f electrons which form the valence shell. This shell lies deep inside the atom, with the result that influences from the surrounding solid are well screened off by the outer electrons, so that even in the solid the 4f shell behaves very much like a in free atom or ion, and is almost completely spherically symmetric. Perturbations from the solid environment however always disturb this symmetry to some extend, with the result that the absorption spectrum becomes dependent on the mutual orientation of the polarization vector of the radiation and the ion. Earlier the existence of a strong magnetic X-ray dichroism (MXD) in the 3d→4f transitions of rare earths. In this thesis this work is extended, to a small degree theoretically but mainly experimentally. MXD is used in experiments on bulk sample, terbium iron garnet, and on rare earth overlayers on a ferromagnetic surface, Ni(110). The results of the latter study show unequivocally the potential of the MXD technique. The second theme of the thesis concerns experimental developments in soft X-ray spectroscopy. A description is given of a double crystal monochromator beamline that was constructed by our group at LURE, France. Results of the use of an organic crystal - multilayer comination in such a monochromator is described. Also a method is described for the characterization of the resolution of soft X-ray monochromators. Finally a contribution to the characterization of the electron yield technique in the soft X-ray range is given. (author). 296 refs.; 64 figs.; 59 schemes; 9 tabs

X-ray spectra of PG quasars. II - the X-ray-ultraviolet excess of PG 1211 + 143

International Nuclear Information System (INIS)

Bechtold, J.; Czerny, B.; Elvis, M.; Fabbiano, G.; Green, R.F.; Harvard-Smithsonian Center for Astrophysics, Cambridge, MA; Kitt Peak National Observatory, Tucson, AZ)

1987-01-01

Observations of the quasar PG 1211 + 143 are presented and its continuum is modelled in terms of an accretion disk and an underlying power law. The X-ray spectrum in the Einstein imaging proportional counter band is well described by a power law with the very steep spectral index 2.2 + or - 0.4. The overall continuum spectral energy distribution can be described as a power law with alpha roughly 1.2 from the infrared to about 1 keV, with the optical, ultraviolet, and soft X-rays forming a large excess above this power law. If the soft X-ray excess is attributed to emission from a physically thin, optically thick accretion disk, then the implied accretion rate is super-Eddington, from which it is concluded that the application of this simple model is not valid. The observed broad-line ratios in PG 1211 + 143 imply broad-line cloud densities that are somewhat higher than those usually derived for quasars. 82 references

Weak Hard X-Ray Emission from Broad Absorption Line Quasars: Evidence for Intrinsic X-Ray Weakness

DEFF Research Database (Denmark)

Luo, B.; Brandt, W. N.; Alexander, D. M.

2014-01-01

We report NuSTAR observations of a sample of six X-ray weak broad absorption line (BAL) quasars. These targets, at z = 0.148-1.223, are among the optically brightest and most luminous BAL quasars known at z 330 times weaker than...... expected for typical quasars. Our results from a pilot NuSTAR study of two low-redshift BAL quasars, a Chandra stacking analysis of a sample of high-redshift BAL quasars, and a NuSTAR spectral analysis of the local BAL quasar Mrk 231 have already suggested the existence of intrinsically X-ray weak BAL...... quasars, i.e., quasars not emitting X-rays at the level expected from their optical/UV emission. The aim of the current program is to extend the search for such extraordinary objects. Three of the six new targets are weakly detected by NuSTAR with ≲ 45 counts in the 3-24 keV band, and the other three...

Superconductive junctions for x-ray spectroscopy

International Nuclear Information System (INIS)

Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

1992-01-01

Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

Localized holes and delocalized electrons in photoexcited inorganic perovskites: Watching each atomic actor by picosecond X-ray absorption spectroscopy

Directory of Open Access Journals (Sweden)

Fabio G. Santomauro

2017-07-01

Full Text Available We report on an element-selective study of the fate of charge carriers in photoexcited inorganic CsPbBr3 and CsPb(ClBr3 perovskite nanocrystals in toluene solutions using time-resolved X-ray absorption spectroscopy with 80 ps time resolution. Probing the Br K-edge, the Pb L3-edge, and the Cs L2-edge, we find that holes in the valence band are localized at Br atoms, forming small polarons, while electrons appear as delocalized in the conduction band. No signature of either electronic or structural changes is observed at the Cs L2-edge. The results at the Br and Pb edges suggest the existence of a weakly localized exciton, while the absence of signatures at the Cs edge indicates that the Cs+ cation plays no role in the charge transport, at least beyond 80 ps. This first, time-resolved element-specific study of perovskites helps understand the rather modest charge carrier mobilities in these materials.

Erratum: Creation of X-Ray Transparency of Matter by Stimulated Elastic Forward Scattering [Phys. Rev. Lett. 115 , 107402 (2015)

Energy Technology Data Exchange (ETDEWEB)

Stöhr, J.; Scherz, A.

2016-01-06

X-ray absorption by matter has long been described by the famous Beer-Lambert law. Here we show how this fundamental law needs to be modified for high-intensity coherent x-ray pulses, now available at x-ray free electron lasers, due to the onset of stimulated elastic forward scattering. We present an analytical expression for the modified polarization-dependent Beer-Lambert law for the case of resonant core-to-valence electronic transitions and incident transform limited x-ray pulses. Upon transmission through a solid, the absorption and dichroic contrasts are found to vanish with increasing x-ray intensity, with the stimulation threshold lowered by orders of magnitude through a super-radiative coherent effect. Our results have broad implications for the study of matter with x-ray lasers.

Identification of Hard X-ray Sources in Galactic Globular Clusters: Simbol-X Simulations

Science.gov (United States)

Servillat, M.

2009-05-01

Globular clusters harbour an excess of X-ray sources compared to the number of X-ray sources in the Galactic plane. It has been proposed that many of these X-ray sources are cataclysmic variables that have an intermediate magnetic field, i.e. intermediate polars, which remains to be confirmed and understood. We present here several methods to identify intermediate polars in globular clusters from multiwavelength analysis. First, we report on XMM-Newton, Chandra and HST observations of the very dense Galactic globular cluster NGC 2808. By comparing UV and X-ray properties of the cataclysmic variable candidates, the fraction of intermediate polars in this cluster can be estimated. We also present the optical spectra of two cataclysmic variables in the globular cluster M 22. The HeII (4868 Å) emission line in these spectra could be related to the presence of a magnetic field in these objects. Simulations of Simbol-X observations indicate that the angular resolution is sufficient to study X-ray sources in the core of close, less dense globular clusters, such as M 22. The sensitivity of Simbol-X in an extended energy band up to 80 keV will allow us to discriminate between hard X-ray sources (such as magnetic cataclysmic variables) and soft X-ray sources (such as chromospherically active binaries).

CROSS-CORRELATION BETWEEN X-RAY AND OPTICAL/NEAR-INFRARED BACKGROUND INTENSITY FLUCTUATIONS

Energy Technology Data Exchange (ETDEWEB)

Mitchell-Wynne, Ketron; Cooray, Asantha [Department of Physics and Astronomy, University of California, Irvine, CA 92697 (United States); Xue, Yongquan [CAS Key Laboratory for Researches in Galaxies and Cosmology, Center for Astrophysics, Department of Astronomy, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, Anhui 230026 (China); Luo, Bin [School of Astronomy and Space Science, Nanjing University, Nanjing, 210093 (China); Brandt, William [Department of Astronomy and Astrophysics, Pennsylvania State University, University Park, PA, 16802 (United States); Koekemoer, Anton [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD 21218 (United States)

2016-12-01

Angular power spectra of optical and infrared background anisotropies at wavelengths between 0.5 and 5 μ m are a useful probe of faint sources present during reionization, in addition to faint galaxies and diffuse signals at low redshift. The cross-correlation of these fluctuations with backgrounds at other wavelengths can be used to separate some of these signals. A previous study on the cross-correlation between X-ray and Spitzer fluctuations at 3.6 μ m and 4.5 μ m has been interpreted as evidence for direct collapse black holes present at z  > 12. Here we return to this cross-correlation and study its wavelength dependence from 0.5 to 4.5 μ m using Hubble and Spitzer data in combination with a subset of the 4 Ms Chandra observations in GOODS-S/ECDFS. Our study involves five Hubble bands at 0.6, 0.7, 0.85, 1.25, and 1.6 μ m, and two Spitzer -IRAC bands at 3.6 μ m and 4.5 μ m. We confirm the previously seen cross-correlation between 3.6 μ m (4.5 μ m) and X-rays with 3.7 σ (4.2 σ ) and 2.7 σ (3.7 σ ) detections in the soft [0.5–2] keV and hard [2–8] keV X-ray bands, respectively, at angular scales above 20 arcsec. The cross-correlation of X-rays with Hubble is largely anticorrelated, ranging between the levels of 1.4 σ –3.5 σ for all the Hubble and X-ray bands. This lack of correlation in the shorter optical/NIR bands implies the sources responsible for the cosmic infrared background at 3.6 and 4.5 μ m are at least partly dissimilar to those at 1.6 μ m and shorter.

TlHgInS ₃ : An Indirect-Band-Gap Semiconductor with X-ray Photoconductivity Response

Energy Technology Data Exchange (ETDEWEB)

Li, Hao; Malliakas, Christos D.; Han, Fei; Chung, Duck Young; Kanatzidis, Mercouri G.

2015-08-11

The quaternary compound TlHgInS3 crystallizes in a new structure type of space group, C2/c, with cell parameters a = 13.916(3) angstrom, b = 3.9132(8) angstrom, c = 21.403(4) angstrom, beta = 104.16(3)degrees, V = 1130.1(8) angstrom(3), and rho = 7.241 g/cm(3). The structure is a unique three-dimensional framework with parallel tunnels, which is formed by (1)(infinity)[InS33-] infinite chains bridged by linearly coordinated Hg2+ ions. TlHgInS3 is a semiconductor with a band gap of 1.74 eV and a resistivity of similar to 4.32 G Omega cm. TlHgInS3 single crystals exhibit photocurrent response when exposed to Ag X-rays. The mobility-lifetime product (mu tau) of the electrons and holes estimated from the photocurrent measurements are (mu tau)(e) approximate to 3.6 x 10(-4) cm(2)/V and (mu tau)(h) approximate to 2.0 x 10(-4) cm(2)/V. Electronic structure calculations at the density functional theory level indicate an indirect band gap and a relatively small effective mass for both electrons and holes. Based on the photoconductivity data, TlHgInS3 is a potential material for radiation detection applications.

X-ray emission from open star clusters with Spectrum-Rontgen-Gamma

DEFF Research Database (Denmark)

Singh, K.P.; Ojha, D.K.; Schnopper, H.W.

1998-01-01

The study of X-ray emission from co-evolving populations of stars in open dusters is extremely important for understanding the dynamo activity among the stars. With this objective, we propose to observe a number of open clusters in the X-ray and UV bands using SPECTRUM-Rontgen-Gamma. The high...... throughput of SPECTRUM-Rontgen-Gamma will help detect main sequence stars like Sun in middle-aged and old clusters. We will study the relationships between various parameters - age, rotation, abundance, UBV colors, X-ray luminosity, coronal temperature etc. X-ray spectra of younger and brighter populations...

X-Ray Absorption with Transmission X-Ray Microscopes

NARCIS (Netherlands)

de Groot, F.M.F.

2016-01-01

In this section we focus on the use of transmission X-ray microscopy (TXM) to measure the XAS spectra. In the last decade a range of soft X-ray and hard X-ray TXM microscopes have been developed, allowing the measurement of XAS spectra with 10–100 nm resolution. In the hard X-ray range the TXM

Characterizing X-Ray and Radio Emission in the Black Hole X-Ray Binary V404 Cygni During Quiescence

Science.gov (United States)

Rana, Vikram; Loh, Alan; Corbel, Stephane; Tomsick, John A.; Chakrabarty, Deepto; Walton, Dominic J.; Barret, Didier; Boggs, Steven E.; Christensen, Finn E.; Craig, William;

The contribution of valence unstable ytterbium states into kinetic properties of YbNi{sub 2-x}Ge{sub 2+x} and YbCu{sub 2-x}Si{sub 2+x}

Energy Technology Data Exchange (ETDEWEB)

Kuzhel, B.C. [Department of Physics, Ivan Franko National University of Lviv, 50 Dragomanow Str., 79005, Lviv (Ukraine)]. E-mail: kuzhelb@org.lviv.net; Shcherba, I.D. [Department of Physics, Ivan Franko National University of Lviv, 50 Dragomanow Str., 79005, Lviv (Ukraine); Institute of Techniques, Academy of Pedagogy, Podchorozych 2, 30-084, Krakow (Poland); Kravchenko, I.I. [Department of Physics, University of Florida, P.O. Box 118440, Gainesville, FL 32611 (United States)]. E-mail: kravch@phys.ufl.edu

2006-11-30

The intermetalic YbNi{sub 2-x}Ge{sub 2+x} (-0.25>=x>=0.25) and YbCu{sub 2-x}Si{sub 2+x} (-0.20>=x>=0.20) alloy systems (CeGa{sub 2}Al{sub 2} -type crystal structure) were studied by measuring X-ray absorption and diffraction at room temperatures as well as electrical resistivity and thermopower in the 4.2-300K temperature range. The temperature dependence of the contribution of valence unstable Yb ions to the total electrical resistance has been analyzed. The qualitative estimation of this contribution has been performed by utilizing the following equation:{delta}{rho}{sub Yb}(T)={rho}{sub exp}(T)-{rho}{sub YbCu{sub 2}Ge{sub 2}}(T)-{delta}{rho}{sub 4.2K},where {delta}{rho}{sub YbCu{sub 2}Ge{sub 2}}(T) is the temperature dependence of YbCu{sub 2}Ge{sub 2} electrical resistance, {delta}{rho}{sub 4.2}={rho}{sub 4.2}(exp)-{rho}{sub 4.2}(YbCu{sub 2}Ge{sub 2})