Vacuum arc plasma deposition of thin titanium dioxide films on silicone elastomer as a functional coating for medical applications

Energy Technology Data Exchange (ETDEWEB)

Boudot, Cécile, E-mail: cecile.boudot@tum.de [Technical University of Munich, Department of Mechanical Engineering, Boltzmannstraße 15, D-85748 Garching bei München (Germany); Kühn, Marvin; Kühn-Kauffeldt, Marina; Schein, Jochen [Institute for Plasma Technology and Mathematics, University of Federal Armed Forces Munich, Werner-Heisenberg-Weg 39, D-85577 Neubiberg (Germany)

2017-05-01

Silicone elastomer is a promising material for medical applications and is widely used for implants with blood and tissue contact. However, its strong hydrophobicity limits adhesion of tissue cells to silicone surfaces, which can impair the healing process. To improve the biological properties of silicone, a triggerless pulsed vacuum cathodic arc plasma deposition technique was applied to deposit titanium dioxide (TiO{sub 2}) films onto the surface. Scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and contact angle measurements were used for coating characterization. Deposited films were about 150 nm thick and exhibited good adhesion to the underlying silicone substrate. Surface wettability and roughness both increased after deposition of the TiO{sub 2} layer. In addition, cell-biological investigations demonstrated that the in-vitro cytocompatibility of TiO{sub 2}-coated samples was greatly improved without impacting silicone's nontoxicity. For validation of use in medical devices, further investigations were conducted and demonstrated stability of surface properties in an aqueous environment for a period of 68 days and the coating's resistance to several sterilization methods. - Highlights: • Vacuum arc plasma was applied to deposit titanium dioxide films onto silicone. • Thickness, roughness and composition of the films were determined. • Cytocompatibility of coated silicone elastomer is greatly improved. • Films have good adhesion to the substrate and are stable, non-toxic and sterilizable.

HV Test of the CTS Edgeless Silicon Detector in Vacuum and Close to a Grounded Plate

CERN Document Server

Eremin, Vladimir; Ruggiero, Gennaro

2007-01-01

The TOTEM Roman Pot Silicon sensors will be operated in vacuum to minimise the mechanical stress of the thin metal window which separates the detector package from the ultra high vacuum of the beam. To approach the beam axis as close as possible the detectors will be mounted with their edge at a distance of the order 100 - 200 um from the thin metal window. As the detectors will be run in overdepletion mode to allow the full charge collection within the shaping time of the readout electronics, there will be a potential drop of more than 100 V across their edge. Moreover this potential drop might need to be further increased with the accumulated radiation dose. The main goals of the tests described in this note are: - Characterisation of the voltage-current characteristics when the detector edge is in the direct vicinity of a grounded metal plate which simulates the above mentioned vacuum window; - Demonstration of the detector operation in vacuum at different pressures.

Non-Vacuum Processed Polymer Composite Antireflection Coating Films for Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Abdullah Uzum

2016-08-01

Full Text Available A non-vacuum processing method for preparing polymer-based ZrO2/TiO2 multilayer structure antireflection coating (ARC films for crystalline silicon solar cells by spin coating is introduced. Initially, ZrO2, TiO2 and surface deactivated-TiO2 (SD-TiO2 based films were examined separately and the effect of photocatalytic properties of TiO2 film on the reflectivity on silicon surface was investigated. Degradation of the reflectance performance with increasing reflectivity of up to 2% in the ultraviolet region was confirmed. No significant change of the reflectance was observed when utilizing SD-TiO2 and ZrO2 films. Average reflectance (between 300 nm–1100 nm of the silicon surface coated with optimized polymer-based ZrO2 single or ZrO2/SD-TiO2 multilayer composite films was decreased down to 6.5% and 5.5%, respectively. Improvement of photocurrent density (Jsc and conversion efficiency (η of fabricated silicon solar cells owing to the ZrO2/SD-TiO2 multilayer ARC could be confirmed. The photovoltaic properties of Jsc, the open-circuit photo voltage (VOC, the fill factor (FF, and the η were 31.42 mA cm−2, 575 mV, 71.5% and 12.91%. Efficiency of the solar cells was improved by the ZrO2-polymer/SD-TiO2 polymer ARC composite layer by a factor of 0.8% with an increase of Jsc (2.07 mA cm−2 compared to those of fabricated without the ARC.

Statistical model for predicting correct amount of deoxidizer of Al-killed grade casted at slab continuous caster of Pakistan steel

International Nuclear Information System (INIS)

Siddiqui, A.R.; Khan, M.M.A.; Ismail, B.M.

1999-01-01

Oxygen is blown in Converter process to oxidize hot metal. This introduces dissolved oxygen in the metal, which may cause embrittlement, voids, inclusion and other undesirable properties in steel. The steel bath at the time of tapping contains 400 to 800 ppm oxygen. Deoxidation is carried out during tapping by adding into the tap ladle appropriate amounts of ferromanganese, ferrosilicon and/or aluminum or other special deoxidizers. In the research aluminum killed grade steel which are casted at the slab caster of Pakistan Steel were investigated. Amount of aluminum added is very critical because if we add lesser amount of aluminum then the required quantity then there will be an incomplete killing of oxygen which results uncleanness in steel. Addition of larger amount of aluminum not only increases the cost of the production but also results as higher amount of alumina, which results in nozzle clogging and increase, loses. The purpose of the research is to develop a statistical model which would predict correct amount of aluminum addition for complete deoxidation of aluminum killed grade casted at slab continuous caster of Pakistan Steel. In the model aluminum added is taken as dependent variable while tapping temperature, turn down carbon composition, turndown manganese composition and oxygen content in steel would be the independent variable. This work is based on operational practice on 130 tons Basic Oxygen furnace. (author)

Laparoscopic temporary bilateral uterine artery occlusion with silicone tubing to prevent hemorrhage during vacuum aspiration of cesarean scar pregnancies.

Science.gov (United States)

Wang, Lingling; Sun, Lingbin; Wang, Lijun; Chen, Huifang; Ouyang, Xue; Qiu, Huiling

2015-11-01

The aim of this study was to determine the feasibility and effects of temporary bilateral uterine artery occlusion with silicone tubing on blood loss during vacuum aspiration of cesarean scar pregnancies (CSP). Six patients with CSP underwent removal of gestational masses via vacuum aspiration. At the beginning of the procedure, all patients underwent laparoscopic temporary bilateral uterine artery occlusion with tubing. The main measurements were the operating time, operative blood loss, Doppler examination of the uterine arteries, and complications of procedure. The median operation time was 99 min, the median time needed to put the tubing in place (the time from the opening of the retroperitoneum to positioning of the tubing) was 45.5 min and the median time of bilateral uterine artery occlusion with tubing was 32.5 min. The median blood loss was 97.5 mL, and none of the patients required blood transfusion. Doppler examination showed no difference in the pre- and postoperative resistance or pulsatility indices of the uterine vessels. There were no conspicuous complications. The serum ß-human chorionic gonadotrophin level decreased to normal within 14-27 days after the operation. Laparoscopic temporary bilateral uterine artery occlusion with silicone tubing is an effective, minimally invasive procedure for reducing blood loss during vacuum aspiration in patients with CSP. © 2015 Japan Society of Obstetrics and Gynecology.

A vacuum thermogravimetric method for outgassing evaluations of silicone-coated fiberglass cloth

Science.gov (United States)

Jensen, L. B.; Mccauley, G. B.; Honma, M.; Hultquist, A. E.

1972-01-01

A method for evaluating outgassing characteristics of space-sensitive materials was devised by modifying a thermogravimetric balance so that a continual weight loss trace is obtained as a function of time at constant temperature and nearly constant pressure. In addition the apparatus is capable of collecting room temperature condensibles during the outgassing run. A series of silicone-coated glass cloth samples were evaluated by this method. The major advantage of the technique is that data presentation is developed in the form of a continuous trace. This data can then be utilized to develop the kinetics of weight loss. The technique has been shown to be a useful and valid one for indicating small differences between materials under vacuum and elevated temperature conditions.

Using ferrosilicon production slags for reduction of open-hearth steel

International Nuclear Information System (INIS)

Grabeklis, A.A.; Vlasov, N.N.; Fadeev, I.G.; Zajchenko, M.V.; Aksenovich, V.I.

1976-01-01

Slags from the production of electric furnace ferrosilicon contain a considerable amount of silicon in recovered form (regulus and SiC) and can be used instead of standard ferroalloys (FS18, FS25 and FS45) for deoxidation with silicon in the furnace during the smelting of a number of carbon and alloyed steels. Test open-hearth heats show that highly dispersed SiC in the composition of this slag ensures active diffusion deoxidation and rapid suppression of bath boiling. The test metal can be compared with the conventional one in all the quality aspects, the recovery of phosphorus during deoxidation and tapping slightly increases

Using ferrosilicon production slags for reduction of open-hearth steel

Energy Technology Data Exchange (ETDEWEB)

Grabeklis, A A; Vlasov, N N; Fadeev, I G; Zaichenko, M V; Aksenovich, V I [Ural' skij Nauchno-Issledovatel' skij Inst. Chernykh Metallov, Sverdlovsk (USSR)

1976-05-01

Slags from the production of electric furnace ferrosilicon contain a considerable amount of silicon in recovered form (regulus and SiC) and can be used instead of standard ferroalloys (FS18, FS25 and FS45) for deoxidation with silicon in the furnace during the smelting of a number of carbon and alloyed steels. Test open-hearth heats show that highly dispersed SiC in the composition of this slag ensures active diffusion deoxidation and rapid suppression of bath boiling. The test metal can be compared with the conventional one in all the quality aspects, the recovery of phosphorus during deoxidation and tapping slightly increases.

Designing deoxidation inhibiting encapsulation of metal oxide nanostructures for fluidic and biological applications

Energy Technology Data Exchange (ETDEWEB)

Ghosh, Moumita, E-mail: ghoshiisc@gmail.com [Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India); Centre for Nano Science and Engineering, Indian Institute of Science, Bangalore 560012 (India); IV. Institute of Physics, Georg-August-Universität-Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); III. Institute of Physics – Biophysics and Complex Systems, Georg-August-Universität-Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Ghosh, Siddharth [III. Institute of Physics – Biophysics and Complex Systems, Georg-August-Universität-Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Seibt, Michael [IV. Institute of Physics, Georg-August-Universität-Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Schaap, Iwan A.T. [III. Institute of Physics – Biophysics and Complex Systems, Georg-August-Universität-Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Institute of Biological Chemistry, Biophysics and Bioengineering, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Schmidt, Christoph F. [III. Institute of Physics – Biophysics and Complex Systems, Georg-August-Universität-Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Mohan Rao, G. [Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012 (India)

2016-12-30

Graphical abstract: To retain atomic structure and morphology of ZnO nanostructures (caused by deoxidation of ZnO) in water/bio-fluids, we propose and demonstrate a robust and inexpensive encapsulation technique using bio-compatible non-ionic surfactant. - Highlights: • Aqueous solutions of ZnO nanorods with and without surfactant are prepared. • With time ZnO nanorods show structural deterioration in different aqueous solutions. • Crystallinity of ZnO nanorods in absence of aqueous solution remain unaffected. • Encapsulation of bio-compatible surfactant in alchohol avoid ZnO deoxidation. • Crystallinity and structure of ZnO nanorods after encapsulation remain unaffected. - Abstract: Due to their photoluminescence, metal oxide nanostructures such as ZnO nanostructures are promising candidates in biomedical imaging, drug delivery and bio-sensing. To apply them as label for bio-imaging, it is important to study their structural stability in a bio-fluidic environment. We have explored the effect of water, the main constituent of biological solutions, on ZnO nanostructures with scanning electron microscopy (SEM) and photoluminescence (PL) studies which show ZnO nanorod degeneration in water. In addition, we propose and investigate a robust and inexpensive method to encapsulate these nanostructures (without structural degradation) using bio-compatible non-ionic surfactant in non-aqueous medium, which was not reported earlier. This new finding is an immediate interest to the broad audience of researchers working in biophysics, sensing and actuation, drug delivery, food and cosmetics technology, etc.

Aluminum deoxidation equilibria and inclusion modification mechanism by calcium treatment of stainless steel melts

International Nuclear Information System (INIS)

Park, Joo Hyun; Kim, Dong Sik; Kim, Yong Hwan; Lee, Sang Beom

2005-01-01

A thermodynamic equilibrium between aluminum and oxygen along with the inclusion morphology in Fe-16%Cr stainless steel was investigated to understand the fundamentals of aluminum deoxidation technology for ferritic stainless steels. Further, the effects of calcium addition on the changes in chemistry and morphology of inclusions were discussed. The measured results for aluminum-oxygen equilibria exhibit relatively good agreement with the calculated values, indicating that the introduction of the first- and second-order interaction parameters, recently reported, is reasonable to numerically express aluminum deoxidation equilibrium in a ferritic stainless steel. In the composition of dissolved aluminum content greater than about 60 ppm, pure alumina particles were observed, while the alumino-manganese silicates containing Cr 2 O 3 were appeared at less than 20 mass ppm of dissolved aluminum. The formation of calcium aluminate inclusions after Ca treatment could be discussed based on the thermodynamic equilibrium with calcium, aluminum, and oxygen in the steel melts. In the composition of steel melt with relatively high content of calcium and low aluminum, the log(X CaO /X Al 2 O 3 ) of inclusions linearly increases with increasing the log [a Ca /a Al 2 ·a O 2 ] with the slope close to unity. However, the slope of the line is significantly lower than the expected value in the composition of steel melt with relatively low calcium and high aluminum contents

Study of the deoxidation of steel with aluminum wire injection in a gas-stirred ladle

Science.gov (United States)

Beskow, K.; Jonsson, L.; Sichen, Du; Viswanathan, N. N.

2001-04-01

In the present work, the deoxidation of liquid steel with aluminum wire injection in a gas-stirred ladle was studied by mathematical modeling using a computational fluid dynamics (CFD) approach. This was complemented by an industrial trial study conducted at Uddeholm Tooling AB (Hagfors, Sweden). The results of the industrial trials were found to be in accordance with the results of the model calculation. In order to study the aspect of nucleation of alumina, emphasis was given to the initial period of deoxidation, when aluminum wire was injected into the bath. The concentration distributions of aluminum and oxygen were calculated both by considering and not considering the chemical reaction. Both calculations revealed that the driving force for the nucleation fo Al2O3 was very high in the region near the upper surface of the bath and close to the wire injection. The estimated nucleation rate in the vicinity of the aluminum wire injection point was much higher than the recommended value for spontaneously homogeneous nucleation, 103 nuclei/(cm3/s). The results of the model calculation also showed that the alumina nuclei generated at the vicinity of the wire injection point are transported to other regions by the flow.

Vacuum arc plasma deposition of thin titanium dioxide films on silicone elastomer as a functional coating for medical applications.

Science.gov (United States)

Boudot, Cécile; Kühn, Marvin; Kühn-Kauffeldt, Marina; Schein, Jochen

2017-05-01

Silicone elastomer is a promising material for medical applications and is widely used for implants with blood and tissue contact. However, its strong hydrophobicity limits adhesion of tissue cells to silicone surfaces, which can impair the healing process. To improve the biological properties of silicone, a triggerless pulsed vacuum cathodic arc plasma deposition technique was applied to deposit titanium dioxide (TiO 2 ) films onto the surface. Scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy and contact angle measurements were used for coating characterization. Deposited films were about 150nm thick and exhibited good adhesion to the underlying silicone substrate. Surface wettability and roughness both increased after deposition of the TiO 2 layer. In addition, cell-biological investigations demonstrated that the in-vitro cytocompatibility of TiO 2 -coated samples was greatly improved without impacting silicone's nontoxicity. For validation of use in medical devices, further investigations were conducted and demonstrated stability of surface properties in an aqueous environment for a period of 68days and the coating's resistance to several sterilization methods. Copyright © 2016 Elsevier B.V. All rights reserved.

High temperature dielectric function of silicon, germanium and GaN

Energy Technology Data Exchange (ETDEWEB)

Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

2010-07-01

In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

Vacuum die attach for integrated circuits

Science.gov (United States)

Schmitt, E.H.; Tuckerman, D.B.

1991-09-10

A thin film eutectic bond for attaching an integrated circuit die to a circuit substrate is formed by coating at least one bonding surface on the die and substrate with an alloying metal, assembling the die and substrate under compression loading, and heating the assembly to an alloying temperature in a vacuum. A very thin bond, 10 microns or less, which is substantially void free, is produced. These bonds have high reliability, good heat and electrical conduction, and high temperature tolerance. The bonds are formed in a vacuum chamber, using a positioning and loading fixture to compression load the die, and an IR lamp or other heat source. For bonding a silicon die to a silicon substrate, a gold silicon alloy bond is used. Multiple dies can be bonded simultaneously. No scrubbing is required. 1 figure.

Effect of both sulphur content and deoxidation degree on the hot ductility of resulphurized austenitic stainless steels in the solidified state

International Nuclear Information System (INIS)

Botella, J.; Sanchez, R.

1998-01-01

The manufacture of free machining austenitic stainless steels features a specific drawback derived from their high sulphur content, which is needed for generating, into the austenitic matrix inclusions to optimize the different machining operations. However, sulphur has ahamfull effect on hot workability. This paper deals with assessing the effect of sulphur content and deoxidation level on the hot ductility of resulphurized austenitic stainless steels in as cast condition. Hot tensile tests were conducted on a Gleeble machine, at temperatures between 1,150 and 1,250 degree celsius, studying a suctility factor as a function of sulphur content, deoxidation degree, as well as type, size and distribution of sulfides. Results point out the harmful effect of increasing sulphur and oxygen contents on the hot workability of resulphurized austenitic stainless steels, and the need to control carefully the level of oxides of these steels. (Author) 5 refs

First-Principles Studies on Deoxidizing Mechanism of V2O5 via Hydrogen

Science.gov (United States)

Zhang, Yanning; Jin, Mengting

With its high melting point, good plasticity and good corrosion resistance at low temperatures, vanadium has been widely used in the industries of iron and steel, aviation, energy storage, etc. However, the traditional manufacturing technologies of pure vanadium are usually connected with complex manufacturing processes, high costs and serious environment pollution, which more or less hindered its further applications. Recently, hydrogen gas has been considered as a promising reducing agent of V2O5, but experimental studies of deoxidization process of V2O5 single crystal surfaces were found to be extremely difficult. In this work, we perform extensive ab initio studies on the structural and electronic properties of different V2O5 surfaces, as well as the adsorption sites, diffusion and desorption processes of H on these surfaces as a dependence of depth. We found that H atoms adsorb at oxygen site to form surface hydroxyl (OH-) and further to form H2O on V2O5(010) surfaces, and the latter is easier to be desorbed compared with the former. But the desorption of H2O causes significant surface reconstructions, which makes the further deoxidization of V2O5 difficult, particularly on the V2O5 single-layer. Our theoretical results are instructive for understandings of the reduction mechanism of V2O5 by using a green agent of H2, and furthermore for the design of new experiments. Work was supported by the startup fund of China Thousand Young Talents, and National Basic Research Program of China (973 program, No: 2013CB934700). The calculations were supported by Tianhe2-JK in Beijing Computational Science Research Center.

Effect of Deoxidation Process on Inclusion and Fatigue Performance of Spring Steel for Automobile Suspension

Science.gov (United States)

Hu, Yang; Chen, Weiqing; Wan, Changjie; Wang, Fangjun; Han, Huaibin

2018-04-01

55SiCrA spring steel was smelted in a vacuum induction levitation furnace. The liquid steel was treated by Si deoxidation, Al modification with Ca treatment and Al modification, and the steel samples were obtained with deformable Al2O3-SiO2-CaO-MgO inclusions closely contacted with steel matrix, Al2O3-CaO-CaS-SiO2-MgO inclusions surrounded by small voids or Al2O3(> 80 pct)-SiO2-CaO-MgO inclusions surrounded by big voids, respectively. Effect of three types of inclusions on steel fatigue cracks was studied. The perpendicular and transverse fatigue cracks around the three types of inclusions leading to fracture were found to vary in behavior. Under the applied stress amplitude of 775 MPa, the fatigue lives of the three spring steels decreased from 4.0 × 107 to 3.8 × 107, and to 3.1 × 107 cycles. For the applied stress amplitude of 750 MPa, the fatigue lives of the three spring steels decreased from 5.2 × 107 to 4.1 × 107, and to 3.4 × 107 cycles. Based on the voids around inclusions, the equivalent size of initial fatigue crack has been newly defined as √ {{{area}_{inclusion} }/{(1 - {CC)}}} , where the contraction coefficient CC of inclusion was introduced. A reliable forecast model of the critical size of inclusion leading to fracture was established by the incorporation of actual width b inclusion or diameter d inclusion of internal inclusion; the model prediction was found to be in agreement with experimental results.

Preliminary studies for the LHCb vertex detector vacuum system

CERN Document Server

Doets, M; Van Bakel, N; Van den Brand, J F J; van den Brand, Jo

2000-01-01

We lay down some general considerations which will serve as a starting point for design studies of a realistic LHCb vertex detector vacuum system. Based on these considerations, we propose a design strategy and identify issues to be further studied. In particular we try to outline some boundary conditions imposed by LHC and LHCb on the vacuum system. We discuss two possibilities for the LHCb vertex detector vacuum system. The preferred strategy uses a differentially pumped vacuum system with the silicon detectors separated from the beam line vacuum. Some estimations on static vacuum pressures and gas flows are presented.

Electricity eliminates rust from district heat pipes. The new deoxidation method works on radiators

Energy Technology Data Exchange (ETDEWEB)

Sonninen, R.; Leisio, C.

1996-11-01

Oxygen dissolving in district heating water through district heat pipes and pipe joints made of plastic corrodes many small and medium-size district heating systems, resulting in heat cuts in the buildings connected to these systems. IN some cases, corrosion products have even circulated back to district heating power plants, thus hampering heat generation in the worst of cases. People residing in blocks of flats where some radiator components are made of plastic also face a similar problem, though on a smaller scale. A small and efficient electrochemical deoxidation cell has now been invented to eliminate this nuisance, which occurs particularly in cold winter weather. (orig.)

Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

Science.gov (United States)

Yilbas, B. S.; Ali, H.

2016-08-01

Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

Energy Technology Data Exchange (ETDEWEB)

Yilbas, B.S., E-mail: bsyilbas@kfupm.edu.sa; Ali, H.

2016-08-15

Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

Ballistic phonon and thermal radiation transport across a minute vacuum gap in between aluminum and silicon thin films: Effect of laser repetitive pulses on transport characteristics

International Nuclear Information System (INIS)

Yilbas, B.S.; Ali, H.

2016-01-01

Short-pulse laser heating of aluminum and silicon thin films pair with presence of a minute vacuum gap in between them is considered and energy transfer across the thin films pair is predicted. The frequency dependent Boltzmann equation is used to predict the phonon intensity distribution along the films pair for three cycles of the repetitive short-pulse laser irradiation on the aluminum film surface. Since the gap size considered is within the Casimir limit, thermal radiation and ballistic phonon contributions to energy transfer across the vacuum gap is incorporated. The laser irradiated field is formulated in line with the Lambert's Beer law and it is considered as the volumetric source in the governing equations of energy transport. In order to assess the phonon intensity distribution in the films pair, equivalent equilibrium temperature is introduced. It is demonstrated that thermal separation of electron and lattice sub-systems in the aluminum film, due to the short-pulse laser irradiation, takes place and electron temperature remains high in the aluminum film while equivalent equilibrium temperature for phonons decays sharply in the close region of the aluminum film interface. This behavior is attributed to the phonon boundary scattering at the interface and the ballistic phonon transfer to the silicon film across the vacuum gap. Energy transfer due to the ballistic phonon contribution is significantly higher than that of the thermal radiation across the vacuum gap.

A new TXRF vacuum chamber with sample changer for chemical analysis using silicon drift chamber detector

International Nuclear Information System (INIS)

Streli, C.; Wobrauschek, P.; Zoeger, N.; Pepponi, G.

2003-01-01

Full text: Several TXRF spectrometers for chemical analysis as well as for wafer surface analysis are commercially available. But there is no one available for chemical analysis offering the possibility to measure the samples in vacuum conditions. Vacuum of 10 -2 mbar in the sample environment helps to reduce the background due to scattering from air, thus to improve the detection limits as well as to reduce the absorption of low energy fluorescence radiation from low Z elements and extend the elemental range to be measured and removes the Ar lines from the spectrum. The x-ray group of the Atominstitut designed and fabricated a new vacuum chamber for TXRF equipped with a 12 position sample changer from Italstructures, Riva, Italy. The detector used was a 10 mm 2 silicon drift detector (KETEK, Munich, Germany), offering the advantage of electrically cooling, so no LN2 is required. The chamber was designed to be attached to a diffraction tube housing, e.g. with a fine focus Mo-x-ray tube and uses a multilayer monochromator. Spectra are stored by a small AMTEK MCA and control between sample changer and MCA communication is done by a modified AMPTEK software. The performance is expressed in detection limits of 1 pg Rb for Mo Ka excitation with 50 kV, 40 mA excitation conditions, 1000 s lifetime, obtained from a sample containing 600 pg Rb as single element standard. Details on performance, reproducibility and light element excitation and detection are presented. (author)

Surface and morphological features of laser-irradiated silicon under vacuum, nitrogen and ethanol

Energy Technology Data Exchange (ETDEWEB)

Hayat, Asma, E-mail: asmahayat@gcu.edu.pk; Bashir, Shazia; Akram, Mahreen; Mahmood, Khaliq; Iqbal, Muhammad Hassan

2015-12-01

Highlights: • Laser irradiation effects on Si surface have been explored. • An Excimer Laser was used as a source. • SEM analysis was performed to explore surface morphology. • Raman spectroscopy analysis was carried out to find crystallographical alterations. - Abstract: Laser-induced surface and structural modification of silicon (Si) has been investigated under three different environments of vacuum, nitrogen (100 Torr) and ethanol. The interaction of 1000 pulses of KrF (λ ≈ 248 nm, τ ≈ 18 ns, repetition rate ≈ 30 Hz) Excimer laser at two different fluences of 2.8 J/cm{sup 2} and 4 J/cm{sup 2} resulted in formation of various kinds of features such as laser induced periodic surface structures (LIPSS), spikes, columns, cones and cracks. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets is explored by Raman spectroscopy. SEM analysis exhibits a non-uniform distribution of micro-scale pillars and spikes at the central ablated regime of silicon irradiated at low laser fluence of 2.8 J/cm{sup 2} under vacuum. Whereas cones, pits, cavities and ripples like features are seen at the boundaries. At higher fluence of 4 J/cm{sup 2}, laser induced periodic structures as well as micro-columns are observed. In the case of ablation in nitrogen environment, melting, splashing, self-organized granular structures and cracks along with redeposition are observed at lower fluence. Such types of small scaled structures in nitrogen are attributed to confinement and shielding effects of nitrogen plasma. Whereas, a crater with multiple ablative layers is formed in the case of ablation at higher fluence. Significantly different surface morphology of Si is observed in the case of ablation in ethanol. It reveals the formation of cavities along with small scale pores and less redeposition. These results reveal that the growth of surface and morphological features of irradiated Si are strongly

Surface and morphological features of laser-irradiated silicon under vacuum, nitrogen and ethanol

International Nuclear Information System (INIS)

Hayat, Asma; Bashir, Shazia; Akram, Mahreen; Mahmood, Khaliq; Iqbal, Muhammad Hassan

2015-01-01

Highlights: • Laser irradiation effects on Si surface have been explored. • An Excimer Laser was used as a source. • SEM analysis was performed to explore surface morphology. • Raman spectroscopy analysis was carried out to find crystallographical alterations. - Abstract: Laser-induced surface and structural modification of silicon (Si) has been investigated under three different environments of vacuum, nitrogen (100 Torr) and ethanol. The interaction of 1000 pulses of KrF (λ ≈ 248 nm, τ ≈ 18 ns, repetition rate ≈ 30 Hz) Excimer laser at two different fluences of 2.8 J/cm 2 and 4 J/cm 2 resulted in formation of various kinds of features such as laser induced periodic surface structures (LIPSS), spikes, columns, cones and cracks. Surface morphology has been observed by Scanning Electron Microscope (SEM). Whereas, structural modification of irradiated targets is explored by Raman spectroscopy. SEM analysis exhibits a non-uniform distribution of micro-scale pillars and spikes at the central ablated regime of silicon irradiated at low laser fluence of 2.8 J/cm 2 under vacuum. Whereas cones, pits, cavities and ripples like features are seen at the boundaries. At higher fluence of 4 J/cm 2 , laser induced periodic structures as well as micro-columns are observed. In the case of ablation in nitrogen environment, melting, splashing, self-organized granular structures and cracks along with redeposition are observed at lower fluence. Such types of small scaled structures in nitrogen are attributed to confinement and shielding effects of nitrogen plasma. Whereas, a crater with multiple ablative layers is formed in the case of ablation at higher fluence. Significantly different surface morphology of Si is observed in the case of ablation in ethanol. It reveals the formation of cavities along with small scale pores and less redeposition. These results reveal that the growth of surface and morphological features of irradiated Si are strongly dependent upon the

A low feed-through 3D vacuum packaging technique with silicon vias for RF MEMS resonators

Science.gov (United States)

Zhao, Jicong; Yuan, Quan; Kan, Xiao; Yang, Jinling; Yang, Fuhua

2017-01-01

This paper presents a wafer-level three-dimensional (3D) vacuum packaging technique for radio frequency microelectromechanical systems (RF MEMS) resonators. A Sn-rich Au-Sn solder bonding is employed to provide a vacuum encapsulation as well as electrical conductions. Vertical silicon vias are micro-fabricated by glass reflow process. The optimized grounding, via pitch, and all-round shielding effectively reduce feed-through capacitance. Thus the signal-to-background ratios (SBRs) of the transmission signals increase from 17 dB to 20 dB, and the quality factor (Q) values of the packaged resonators go from around 8000 up to more than 9500. The measured average leak rate and shear strength are (2.55  ±  0.9)  ×  10-8 atm-cc s-1 and 42.53  ±  4.19 MPa, respectively. Furthermore, thermal cycling test between  -40 °C and 100 °C and high temperature storage test at 150 °C show that the resonant-frequency drifts are less than  ±7 ppm. In addition, the SBRs and the Q values have no obvious change after the tests. The experimental results demonstrated that the proposed encapsulation technique is well suited for the applications of RF MEMS devices.

Temperature control in vacuum

International Nuclear Information System (INIS)

Dearnaley, G.

1986-01-01

The patent concerns a method for controlling the temperature of silicon wafers (or samples), during ion beam treatment of the wafers, in a vacuum. The apparatus and method are described for irradiation and temperature control of the samples. The wafers are mounted on a drum which is rotated through the ion beam, and are additionally heated by infra-red lamps to achieve the desired temperature. (U.K.)

Reduction of titanium dioxide and other metal oxides by electro-deoxidation

International Nuclear Information System (INIS)

Fray, Derek J.

2003-01-01

Titanium dioxide and other reactive metal compounds are reduced by more reactive metals to form pure metals. These, are expensive and time consuming processes which makes these metals very expensive. Many of these metals and alloys have excellent properties, high strength, low density and very good corrosion resistance, but their use is restricted by its high cost. Electro-deoxidation is a very simple technique where an oxide is made cathodic in a fused salt of an alkaline earth chloride. By applying a voltage, below the decomposition potential of the salt, it has been found that the cathodic reaction is the ionization of oxygen from the oxide to leave a pure metal, rather than the reduction of the ion alkaline earth ion element. Laboratory experiments have shown that this approach can be applied to the reduction of a large number of metal oxides. Another important observation is that when a mixture of oxides is used as the cathode, the product is an alloy of uniform composition. This is a considerable advantage for many alloys that are difficult to prepare using conventional technology. (Original)

Determination of ionization energies of small silicon clusters with vacuum?ultraviolet (VUV) radiation

Energy Technology Data Exchange (ETDEWEB)

Kostko, Oleg; Leone, Stephen R.; Duncan, Michael A.; Ahmed, Musahid

2009-09-23

In this work we report on single photon vacuum ultraviolet photoionization of small silicon clusters (n=1-7) produced via laser ablation of Si. The adiabatic ionization energies (AIE) are extracted from experimental photoionization efficiency (PIE) curves with the help of Frank?Condon simulations, used to interpret the shape and onset of the PIE curves. The obtained AIEs are (all energies are in eV): Si (8.13+-0.05), Si2 (7.92+-0.05), Si3 (8.12+-0.05), Si4 (8.2+-0.1), Si5 (7.96+-0.07), Si6 (7.8+-0.1), and Si7 (7.8+-0.1). Most of the experimental AIE values are in good agreement with ab initio electronic structure calculations. To explain observed deviations between the experimental and theoretical AIEs for Si4 and Si6, a theoretical search of different isomers of these species is performed. Electronic structure calculations aid in the interpretation of the a2PIu state of Si2+ dimer in the PIE spectrum. Time dependent density functional theory (TD-DFT) calculations are performed to reveal the energies of electronically excited states in the cations for a number of Si clusters.

Creep-behavior of different SiC-materials in vacuum and in air

International Nuclear Information System (INIS)

Schnuerer, K.

1979-10-01

Creep data under 4-point loading conditions of two hot-pressed SiC-materials with different amounts of aluminium in the SiC powder and of two reaction-sintered and silicon-infiltrated materials with different amounts of free silicon are presented. Creep tests in vacuum and also in air are performed in a temperature range from 1273 K up to 1973 K and in a stress range from 100MN/m 2 to 190MN/m 2 . For the hot-pressed SiC a stress exponent of n = 1 and activation energies of 363kJ/mol and 386kJ/mol have been found by temperature and stress change tests in vacuum. From these data one can conclude that Coble-creep is the rate-controlling process. A measurable creep-rate can be observed at temperatures above 1673 K. On the opposite a creep-rate in vacuum for Si-infiltrated SiC is measurable at temperatures already below 1273 K. TEN-observation of this materials show the presence of a second phase at grain-boundaries (silicon), thus an influence of free silicon on creep can be deduced. Besides that, a stress dependence on stress exponent can be seen for one of the reaction-sintered materials. This is referred to the activity of dislocations. (orig./RW) [de

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

International Nuclear Information System (INIS)

Lee, W.C.T.; Bishop, N.; Thompson, D.L.; Xue, K.; Scappucci, G.; Cederberg, J.G.; Gray, J.K.; Han, S.M.; Celler, G.K.; Carroll, M.S.; Simmons, M.Y.

2013-01-01

Highlights: ► Strained silicon-on-insulator (sSOI) samples were flash-annealed at high temperature under ultra-high vacuum conditions. ► The extend of surface strain relaxation depends on the annealing temperature with no strain relaxation observed below 1020 °C. ► A 2 × 1 reconstructed surface with low defect density can be achieved. ► The annealed sSOI surface shows enhanced step undulations due to the unique energetics caused by surface strain. - Abstract: We investigate the ability to reconstruct strained silicon-on-insulator (sSOI) substrates in ultra-high vacuum for use in atomic scale device fabrication. Characterisation of the starting sSOI substrate using μRaman shows an average tensile strain of 0.8%, with clear strain modulation in a crosshatch pattern across the surface. The surfaces were heated in ultra-high vacuum from temperatures of 900 °C to 1100 °C and subsequently imaged using scanning tunnelling microscopy (STM). The initial strain modulation on the surface is observed to promote silicon migration and the formation of crosshatched surface features whose height and pitch increases with increasing annealing temperature. STM images reveal alternating narrow straight S A steps and triangular wavy S B steps attributed to the spontaneous faceting of S B and preferential adatom attachment on S B under biaxial tensile strain. Raman spectroscopy shows that despite these high temperature anneals no strain relaxation of the substrate is observed up to temperatures of 1020 °C. Above 1100 °C, strain relaxation is evident but is confined to the surface.

Geometrical metrology on vacuum cast silicone rubber form using computed tomography

DEFF Research Database (Denmark)

Pacurar, Ramona; Müller, Pavel; De Chiffre, Leonardo

An investigation on geometrical measurements of silicone rubber cake form and polyamide molds using three measuring techniques - CMM, optical scanner and CT scanner - was carried out. The only measurand was diameter of a cone measured at specified levels. An uncertainty budget for all three...... techniques. It was found that when the silicon rubber form was measured on the supported bottom mold or the bottom mold was measured itself, the diameter measurements performed on optical scanner and CT scanner were bigger compared to CMM measurements. On the other hand, the diameter resulted in smaller...... values when the silicon rubber form was measured on the supported top mold or the top mold was measured itself. A procedure for measurement of highly deformable part, such as silicone rubber form, was developed. Uncertainties from measurement on the optical scanner were big. This was mainly connected...

Corrosion of Type 7075-T73 Aluminum in a 10% HNO3 + Fe2(SO4)3 Deoxidizer Solution

Science.gov (United States)

Savas, Terence P.; Earthman, James C.

2009-03-01

Localized corrosion damage in Type 7075-T73 aluminum was investigated for a HNO3 + Fe2(SO4)3 deoxidizer solution which is frequently used for surface pretreatment prior to anodizing. The corrosion damage was quantified in the time domain using the electrochemical noise resistance ( Rn) and in the frequency domain using the spectral noise impedance ( Rsn). The Rsn was derived from an equivalent electrical circuit model that represented the corrosion cell implemented in the present study. These data are correlated to scanning electron microscopy (SEM) examinations and corresponding statistical analysis based on digital image analysis of the corroded surfaces. Other data used to better understand the corrosion mechanisms include the open circuit potential (OCP) and coupling-current time records. Based on statistical analysis of the pit structures for 600 and 1200 s exposures, the best fit was achieved with a 3-paramater lognormal distribution. It was observed for the 1200 s exposure that a small population of pits continued to grow beyond a threshold critical size of 10 μm. In addition, significant grain boundary attack was observed after 1200 s exposure. These data are in good agreement with the electrochemical data. Specifically, the Rn was computed to be 295 and 96 Ω-cm2 for 600 and 1200 s exposures, respectively. The calculated value of Rsn, theoretically shown to be equal to Rn in the low frequency limit, was higher than Rn for a 1200 s exposure period. However, better agreement between the Rn and Rsn was found for frequencies above 0.01 Hz. Experimental results on the measurement performance for potassium chloride (KCl) saturated double-junction Ag/AgCl and single-junction Hg/Hg2Cl2 reference electrodes in the low-pH deoxidizer solution are also compared.

Silicon Alloying On Aluminium Based Alloy Surface

International Nuclear Information System (INIS)

Suryanto

2002-01-01

Silicon alloying on surface of aluminium based alloy was carried out using electron beam. This is performed in order to enhance tribological properties of the alloy. Silicon is considered most important alloying element in aluminium alloy, particularly for tribological components. Prior to silicon alloying. aluminium substrate were painted with binder and silicon powder and dried in a furnace. Silicon alloying were carried out in a vacuum chamber. The Silicon alloyed materials were assessed using some techniques. The results show that silicon alloying formed a composite metal-non metal system in which silicon particles are dispersed in the alloyed layer. Silicon content in the alloyed layer is about 40% while in other place is only 10.5 %. The hardness of layer changes significantly. The wear properties of the alloying alloys increase. Silicon surface alloying also reduced the coefficient of friction for sliding against a hardened steel counter face, which could otherwise be higher because of the strong adhesion of aluminium to steel. The hardness of the silicon surface alloyed material dropped when it underwent a heating cycle similar to the ion coating process. Hence, silicon alloying is not a suitable choice for use as an intermediate layer for duplex treatment

Microdefects in neutron-transmutationaly doped silicon

International Nuclear Information System (INIS)

Vysotskaya, V.V.; Gorin, S.N.; Gres'kov, I.M.; Sobolev, N.A.; Shek, E.I.

1988-01-01

Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed

Microdefects in neutron-transmutationaly doped silicon

Energy Technology Data Exchange (ETDEWEB)

Vysotskaya, V V; Gorin, S N; Gres' kov, I M; Sobolev, N A; Shek, E I

1988-03-01

Using the method of X-ray topography and high-voltage electron microscopy, the nature of microdefects and character of their changes in neutron-transmutationaly doped silicon depending on the sample prehistory and heat treatment (HT) conditions are refined. It is shown that the microstructure of neutron-transmutationaly doped dislocation-free silicon crystals depends on conditions of ingot growth and post-radiation annealing environment. Annealing in chlorine-containing atmosphere removes microdefects (MD), although in vacuum, argon or air growing MD are preserved and new MD are formed.

Laboratory Study on Prevention of CaO-Containing ASTM "D-Type" Inclusions in Al-Deoxidized Low-Oxygen Steel Melts During Basic Slag Refining

Science.gov (United States)

Jiang, Min; Wang, Xin-Hua; Yang, Die; Lei, Shao-Long; Wang, Kun-Peng

2015-12-01

Present work was attempted to explore the possibility of preventing CaO-containing inclusions in Al-deoxidized low-oxygen special steel during basic slag refining, which were known as ASTM D-type inclusions. Based on the analysis on formation thermodynamics of CaO-containing inclusions, a series of laboratory experiments were designed and carried out in a vacuum induction furnace. During the experiments, slag/steel reaction equilibrium was intentionally suppressed with the aim to decrease the CaO contents in inclusions, which is different from ordinary concept that slag/steel reaction should be promoted for better control of inclusions. The obtained results showed that high cleanliness of steel was obtained in all the steel melts, with total oxygen contents varied between 0.0003 and 0.0010 pct. Simultaneously, formation of CaO-containing inclusions was successfully prohibited, and all the formed oxide inclusions were MgO-Al2O3 or/and Al2O3 in very small sizes of about 1 to 3 μm. And 90 pct to nearly 98 pct of them were wrapped by relative thicker MnS outer surface layers to produce dual-phased "(MgO-Al2O3) + MnS" or "Al2O3 + MnS" complex inclusions. Because of much better ductility of MnS, certain deformability of these complex inclusions can be expected which is helpful to improve fatigue resistance property of steel. Only very limited number of singular MnS inclusions were with sizes larger than 13 μm, which were formed during solidification because of. In the end, formation of oxide inclusions in steel was qualitatively evaluated and discussed.

Front-end circuit for position sensitive silicon and vacuum tube photomultipliers with gain control and depth of interaction measurement

International Nuclear Information System (INIS)

Herrero, Vicente; Colom, Ricardo; Gadea, Rafael; Lerche, Christoph W.; Cerda, Joaquin; Sebastia, Angel; Benlloch, Jose M.

2007-01-01

Silicon Photomultipliers, though still under development for mass production, may be an alternative to traditional Vacuum Photomultipliers Tubes (VPMT). As a consequence, electronic front-ends initially designed for VPMT will need to be modified. In this simulation, an improved architecture is presented which is able to obtain impact position and depth of interaction of a gamma ray within a continuous scintillation crystal, using either kind of PM. A current sensitive preamplifier stage with individual gain adjustment interfaces the multi-anode PM outputs with a current division resistor network. The preamplifier stage allows to improve front-end processing delay and temporal resolution behavior as well as to increase impact position calculation resolution. Depth of interaction (DOI) is calculated from the width of the scintillation light distribution, which is related to the sum of voltages in resistor network input nodes. This operation is done by means of a high-speed current mode scheme

An improved method for preparing silicon carbide

International Nuclear Information System (INIS)

Baney, R.H.

1980-01-01

A desired shape is formed from a polysilane and the shape is heated in an inert atmosphere or under vacuum to 1150 to 1600 0 C until the polysilane is converted to silicon carbide. The polysilane contains from 0 to 60 mole percent of (CH 3 ) 2 Si units and from 40 to 100 mole percent of CH 3 Si units. The remaining bonds on silicon are attached to another silicon atom or to a chlorine or bromine atom, such that the polysilane contains from 10 to 43 weight percent of hydrolyzable chlorine or from 21 to 63 weight percent of hydrolyzable bromine. (author)

ISPA (imaging silicon pixel array) experiment

CERN Multimedia

Patrice Loïez

2002-01-01

The ISPA tube is a position-sensitive photon detector. It belongs to the family of hybrid photon detectors (HPD), recently developed by CERN and INFN with leading photodetector firms. HPDs confront in a vacuum envelope a photocathode and a silicon detector. This can be a single diode or a pixelized detector. The electrons generated by the photocathode are efficiently detected by the silicon anode by applying a high-voltage difference between them. ISPA tube can be used in high-energy applications as well as bio-medical and imaging applications.

Development of Solar Grade (SoG) Silicon

Energy Technology Data Exchange (ETDEWEB)

Joyce, David B; Schmid, Frederick

2008-01-18

The rapid growth of the photovoltaics (PV) industry is threatened by the ongoing shortage of suitable solar grade (SoG) silicon. Until 2004, the PV industry relied on the off spec polysilicon from the electronics industry for feedstock. The rapid growth of PV meant that the demand for SoG silicon predictably surpassed this supply. The long-term prospects for PV are very bright as costs have come down, and efficiencies and economies of scale make PV generated electricity ever more competitive with grid electricity. However, the scalability of the current process for producing poly silicon again threatens the future. A less costly, higher volume production technique is needed to supply the long-term growth of the PV industry, and to reduce costs of PV even further. This long-term need was the motivation behind this SBIR proposal. Upgrading metallurgical grade (MG) silicon would fulfill the need for a low-cost, large-scale production. Past attempts to upgrade MG silicon have foundered/failed/had trouble reducing the low segregation coefficient elements, B, P, and Al. Most other elements in MG silicon can be purified very efficiently by directional solidification. Thus, in the Phase I program, Crystal Systems proposed a variety of techniques to reduce B, P, and Al in MG silicon to produce a low cost commercial technique for upgrading MG silicon. Of the variety of techniques tried, vacuum refining and some slagging and additions turned out to be the most promising. These were pursued in the Phase II study. By vacuum refining, the P was reduced from 14 to 0.22 ppmw and the Al was reduced from 370 ppmw to 0.065 ppmw. This process was scaled to 40 kg scale charges, and the results were expressed in terms of half-life, or time to reduce the impurity concentration in half. Best half-lives were 2 hours, typical were 4 hours. Scaling factors were developed to allow prediction of these results to larger scale melts. The vacuum refining required the development of new crucibles

An improved method of preparing silicon carbide

International Nuclear Information System (INIS)

Baney, R.H.

1979-01-01

A method of preparing silicon carbide is described which comprises forming a desired shape from a polysilane of the average formula:[(CH 3 ) 2 Si][CH 3 Si]. The polysilane contains from 0 to 60 mole percent (CH 3 ) 2 Si units and from 40 to 100 mole percent CH 3 Si units. The remaining bonds on the silicon are attached to another silicon atom or to a halogen atom in such manner that the average ratio of halogen to silicon in the polysilane is from 0.3:1 to 1:1. The polysilane has a melt viscosity at 150 0 C of from 0.005 to 500 Pa.s and an intrinsic viscosity in toluene of from 0.0001 to 0.1. The shaped polysilane is heated in an inert atmosphere or in a vacuum to an elevated temperature until the polysilane is converted to silicon carbide. (author)

Ceramic material suitable for repair of a space vehicle component in a microgravity and vacuum environment, method of making same, and method of repairing a space vehicle component

Science.gov (United States)

Riedell, James A. (Inventor); Easler, Timothy E. (Inventor)

2009-01-01

A precursor of a ceramic adhesive suitable for use in a vacuum, thermal, and microgravity environment. The precursor of the ceramic adhesive includes a silicon-based, preceramic polymer and at least one ceramic powder selected from the group consisting of aluminum oxide, aluminum nitride, boron carbide, boron oxide, boron nitride, hafnium boride, hafnium carbide, hafnium oxide, lithium aluminate, molybdenum silicide, niobium carbide, niobium nitride, silicon boride, silicon carbide, silicon oxide, silicon nitride, tin oxide, tantalum boride, tantalum carbide, tantalum oxide, tantalum nitride, titanium boride, titanium carbide, titanium oxide, titanium nitride, yttrium oxide, zirconium diboride, zirconium carbide, zirconium oxide, and zirconium silicate. Methods of forming the ceramic adhesive and of repairing a substrate in a vacuum and microgravity environment are also disclosed, as is a substrate repaired with the ceramic adhesive.

The first results of siliconization on SWIP-RFP device

International Nuclear Information System (INIS)

Zhang Peng; Li Qiang; Luo Cuiwen; Li Jieping; Qian Shangjie; Fang Shuiquan; Yi Ping; Xue Jun; Li Kehua; Luo Junlin; Hong Wenyu; Cao Zeng; Zhang Nianman; Wang Quanming; Li Jie; Huang Ming; Zhong Yunze; Zhang Qingchun; Luo Cuixian

1997-01-01

The first results of reversed field pinch (RFP) and ultra low safety factor (ULQ) plasma experiments with siliconization on SWIP-RFP device are presented in this paper. The siliconization decreases the impurity concentrations in the plasma and increases the configuration sustainment time. Ion temperature has been estimated with the CV line of the visible light spectra and the broadening of CIII lines in vacuum ultraviolet (VUV) region. The anomalous ion heating as well as the anomalous resistance were observed. (orig.)

The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

International Nuclear Information System (INIS)

Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

2014-01-01

This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10 −10  Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10 −10  Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment. (paper)

Continuous Czochralski growth: Silicon sheet growth development of the large area sheet task of the low cost silicon solar array project

Science.gov (United States)

Johnson, C. M.

1980-12-01

The growth of 100 kg of silicon single crystal material, ten cm in diameter or greater, and 150 kg of silicon single crystal material 15 cm or greater utilizing one common silicon container material (one crucible) is investigated. A crystal grower that is recharged with a new supply of polysilicon material while still under vacuum and at temperatures above the melting point of silicon is developed. It accepts large polysilicon charges up to 30 kg, grows large crystal ingots (to 15 cm diameter and 25 kg in weight), and holds polysilicon material for recharging (rod or lump) while, at the same time, growing crystal ingots. Special equipment is designed to recharge polysilicon rods, recharge polysilicon lumps, and handle and store large, hot silicon crystal ingots. Many continuous crystal growth runs were performed lasting as long as 109 hours and producing as many as ten crystal ingots, 15 cm with weights progressing to 27 kg.

Preservation of atomically clean silicon surfaces in air by contact bonding

DEFF Research Database (Denmark)

Grey, Francois; Ljungberg, Karin

1997-01-01

When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find that the or...... reconstruction from oxidation in air, Contact bonding opens the way to novel applications of reconstructed semiconductor surfaces, by preserving their atomic structure intact outside of a UHV chamber. (C) 1997 American Institute of Physics.......When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find...... that the ordered atomic structure of the surfaces is protected from oxidation, even after the bonded samples have been in air for weeks. Further, we show that silicon surfaces that have been cleaned and hydrogen-passivated in UHV can be contacted in UHV in a similarly hermetic fashion, protecting the surface...

Synthesis and investigation of silicon carbide nanowires by HFCVD ...

Indian Academy of Sciences (India)

Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour .... −5. Torr by mechanical and dif- fusion vacuum pumps, then high purity H2 gas was fed into it. ... to standard PDF card numbers of 01-074-2307 and 01-.

Ion beam heating of thin silicon membranes

International Nuclear Information System (INIS)

Tissot, P.E.; Hart, R.R.

1993-01-01

For silicon membranes irradiated by an ion beam in a vacuum environment, such as the masks used for ion beam lithography and the membranes used for thin film self-annealing, the heat transfer modes are radiation and limited conduction through the thin membrane. The radiation component depends on the total hemispherical emissivity which varies with the thickness and temperature of the membrane. A semiempirical correlation for the absorption coefficient of high resistivity silicon was derived and the variation of the total emissivity with temperature was computed for membranes with thicknesses between 0.1 and 10 μm. Based on this result, the temperatures reached during exposure to ion beams of varying intensities were computed. A proper modeling of the emissivity is shown to be important for beam heating of thin silicon membranes. (orig.)

Resonant tunnelling from nanometre-scale silicon field emission cathodes

International Nuclear Information System (INIS)

Johnson, S.; Markwitz, A.

2005-01-01

In this paper we report the field emission properties of self-assembled silicon nanostructures formed on an n-type silicon (100) substrate by electron beam annealing. The nanostructures are square based, with an average height of 8 nm and are distributed randomly over the entire substrate surface. Following conditioning, the silicon nanostructure field emission characteristics become stable and reproducible with electron emission occurring for fields as low as 3 Vμm-1. At higher fields, a superimposed on a background current well described by conventional Fowler-Nordheim theory. These current peaks are understood to result from enhanced tunnelling through resonant states formed at the substrate-nanostructure and nanostructure-vacuum interface. (author). 13 refs., 3 figs

Heteroepitaxial Growth of Germanium-on-Silicon Using Ultrahigh-Vacuum Chemical Vapor Deposition with RF Plasma Enhancement

Science.gov (United States)

Alharthi, Bader; Grant, Joshua M.; Dou, Wei; Grant, Perry C.; Mosleh, Aboozar; Du, Wei; Mortazavi, Mansour; Li, Baohua; Naseem, Hameed; Yu, Shui-Qing

2018-05-01

Germanium (Ge) films have been grown on silicon (Si) substrate by ultrahigh-vacuum chemical vapor deposition with plasma enhancement (PE). Argon plasma was generated using high-power radiofrequency (50 W) to assist in germane decomposition at low temperature. The growth temperature was varied in the low range of 250°C to 450°C to make this growth process compatible with complementary metal-oxide-semiconductor technology. The material and optical properties of the grown Ge films were investigated. The material quality was determined by Raman and x-ray diffraction techniques, revealing growth of crystalline films in the temperature range of 350°C to 450°C. Photoluminescence spectra revealed improved optical quality at growth temperatures of 400°C and 450°C. Furthermore, material quality study using transmission electron microscopy revealed existence of defects in the Ge layer grown at 400°C. Based on the etch pit density, the average threading dislocation density in the Ge layer obtained at this growth temperature was measured to be 4.5 × 108 cm-2. This result was achieved without any material improvement steps such as use of graded buffer or thermal annealing. Comparison between PE and non-plasma-enhanced growth, in the same machine at otherwise the same growth conditions, indicated increased growth rate and improved material and optical qualities for PE growth.

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by thermionic vacuum arc (TVA) method

Science.gov (United States)

Ciupinǎ, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Vladoiu, Rodica; Mandes, Aurelia; Dinca, Virginia; Nicolescu, Virginia; Manu, Radu; Dinca, Paul; Zaharia, Agripina

2018-02-01

To obtain protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, was used TVA method. The initial carbon layer has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV. The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. The retention of oxygen in the protective layer of N-Si-C is due to the following phenomena: (a) The reaction between oxygen and silicon carbide resulting in silicon oxide and carbon dioxide; (b) The reaction involving oxygen, nitrogen and silicon resulting silicon oxinitride with a variable composition; (c) Nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Carbon nanotube network-silicon oxide non-volatile switches.

Science.gov (United States)

Liao, Albert D; Araujo, Paulo T; Xu, Runjie; Dresselhaus, Mildred S

2014-12-08

The integration of carbon nanotubes with silicon is important for their incorporation into next-generation nano-electronics. Here we demonstrate a non-volatile switch that utilizes carbon nanotube networks to electrically contact a conductive nanocrystal silicon filament in silicon dioxide. We form this device by biasing a nanotube network until it physically breaks in vacuum, creating the conductive silicon filament connected across a small nano-gap. From Raman spectroscopy, we observe coalescence of nanotubes during breakdown, which stabilizes the system to form very small gaps in the network~15 nm. We report that carbon nanotubes themselves are involved in switching the device to a high resistive state. Calculations reveal that this switching event occurs at ~600 °C, the temperature associated with the oxidation of nanotubes. Therefore, we propose that, in switching to a resistive state, the nanotube oxidizes by extracting oxygen from the substrate.

Ultraclean Si/Si interface formation by surface preparation and direct bonding in ultrahigh vacuum

DEFF Research Database (Denmark)

Hermansson, Karin; Grey, Francois; Bengtsson, Stefan

1998-01-01

Silicon surfaces have been cleaned and bonded in ultrahigh vacuum, at a pressure in the 10(-10) Torr range. The bonded interfaces show extremely low contamination levels as measured by secondary ion mass spectroscopy. Nevertheless, a potential barrier could be detected at the interface by spreading...

Low energy production processes in manufacturing of silicon solar cells

Science.gov (United States)

Kirkpatrick, A. R.

1976-01-01

Ion implantation and pulsed energy techniques are being combined for fabrication of silicon solar cells totally under vacuum and at room temperature. Simplified sequences allow very short processing times with small process energy consumption. Economic projections for fully automated production are excellent.

Soft chemical synthesis of silicon nanosheets and their applications

Energy Technology Data Exchange (ETDEWEB)

Nakano, Hideyuki; Ikuno, Takashi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan)

2016-12-15

Two-dimensional silicon nanomaterials are expected to show different properties from those of bulk silicon materials by virtue of surface functionalization and quantum size effects. Since facile fabrication processes of large area silicon nanosheets (SiNSs) are required for practical applications, a development of soft chemical synthesis route without using conventional vacuum processes is a challenging issue. We have recently succeeded to prepare SiNSs with sub-nanometer thicknesses by exfoliating layered silicon compounds, and they are found to be composed of crystalline single-atom-thick silicon layers. In this review, we present the synthesis and modification methods of SiNSs. These SiNSs have atomically flat and smooth surfaces due to dense coverage of organic moieties, and they are easily self-assembled in a concentrated state to form a regularly stacked structure. We have also characterized the electron transport properties and the electronic structures of SiNSs. Finally, the potential applications of these SiNSs and organic modified SiNSs are also reviewed.

320 x 240 uncooled IRFPA with pixel wise thin film vacuum packaging

Science.gov (United States)

Yon, J.-J.; Dumont, G.; Rabaud, W.; Becker, S.; Carle, L.; Goudon, V.; Vialle, C.; Hamelin, A.; Arnaud, A.

2012-10-01

Silicon based vacuum packaging is a key enabling technology for achieving affordable uncooled Infrared Focal Plane Arrays (IRFPA) as required by the promising mass market for very low cost IR applications, such as automotive driving assistance, energy loss monitoring in buildings, motion sensors… Among the various approaches studied worldwide, the CEA, LETI is developing a unique technology where each bolometer pixel is sealed under vacuum at the wafer level, using an IR transparent thin film deposition. This technology referred to as PLP (Pixel Level Packaging), leads to an array of hermetic micro-caps each containing a single microbolometer. Since the successful demonstration that the PLP technology, when applied on a single microbolometer pixel, can provide the required vacuum noise and NETD distributions, the paper also puts emphasis on additional key features such as thermal time constant, image quality, and ageing properties.

Raman crystallinity and Hall Effect studies of microcrystalline silicon ...

African Journals Online (AJOL)

Aluminium induced crystallization (AIC) was used to crystallize sputtered amorphous silicon thin films on aluminium‐coated glass at annealing temperatures ranging from 250‐520°C in vacuum. Crystalline volume fractions were measured by Raman spectrometry as a function of annealing temperature. It was shown that the ...

Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

International Nuclear Information System (INIS)

Miyoshi, K.; Buckley, D.H.

1978-04-01

Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active metal is, and the greater resistance to shear it has, with the exception of rhodium and tungsten, the less transfer to silicon carbide

Impregnation of Graphite with Liquid Silicon in a Vacuum; Impregnation du graphite avec du silicium llquide sous vide; Propitka grafita kremniem v vakuume; Impregnacion de grafito con silicio liquido en el vacio

Energy Technology Data Exchange (ETDEWEB)

Ivanov, V. E.; Zelenskij, V. F.; Kolendovskij, M. K.; Kolomiets, L. D.

1963-11-15

A study was made of the possibility of producing high thermal resistance graphite-silicon carbide materials by means of impregnating MG graphite with liquid silicon in a vacuum. An attempt is made to explain the mechanism and origins of the degradation of products during the impregnation process. On the basis of their researches the authors put forward a number of technical requirements, observance of which make it possible to produce graphite-silicon carbide materials by means of impregnation of graphite with liquid silicon-in a vacuum at temperatures of 1450 to 1600 deg. C. (author) [French] Les auteurs etudient la possibilite d'obtenir, en impregnant du graphite MG avec du silicium liquide sous vide, des materiaux au graphite, carbure et silicium resistants a la chaleur. Ils cherchent a expliquer le mecanisme et les causes de la destruction des produits au cours de l'impregnation. Se fondant sur les resultats de leurs recherches, ils enoncent un certain nombre de conditions technologiques a remplir pour obtenir les materiaux en question en impregnant le graphite de silicium liquide sous vide, a une temperature de l'ordre de 1450 a 1600 deg. C. (author) [Spanish] Los autores han estudiado la posibilidad de preparar materiales de grafito y carburo de silicio de elevada resistencia termica impregnando grafito marca MG con silicio liquido en el vacio. Proponen una explicacion del mecanismo y de las causas de la degradacion de los productos durante la impregnacion. Sobre la base de las investigaciones realizadas, los autores enumeran una serie de condiciones tecnologicas cuyo cumplimiento permite preparar piezas de grafito y carburo de silicio, impregnando el grafito con silicio liquido en el vacio a temperaturas comprendidas entre 1450 y 1600 deg. C. [Russian] V rabote izuchalas' vozmozhnost' sozdaniya grafit-karbidkremnievykh materialov s povyshennoj termostojkost'yu putem propitki grafita marki MG zhidkim kremniem v vakuume. Sdelana popytka ob{sup y

Total Reflection X-ray Fluorescence attachment module modified for analysis in vacuum

International Nuclear Information System (INIS)

Wobrauschek, P.; Streli, C.; Kregsamer, P.; Meirer, F.; Jokubonis, C.; Markowicz, A.; Wegrzynek, D.; Chinea-Cano, E.

2008-01-01

Based on the design of the low cost Total Reflection X-Ray Fluorescence attachment module available since 1986 from Atominstitut (WOBRAUSCHEK-module) which can be attached to existing X-ray equipment, a new version was developed which allows the analysis of samples in vacuum. This design was in particular possible as the Peltier cooled light weight Silicon Drift Detector is following all adjustment procedures for total reflection as angle rotation and linear motion. The detector is mounted through a vacuum feed and O-ring tightening to the small vacuum chamber. The standard 30 mm round quartz, Si-wafer or Plexiglas reflectors are used to carry the samples. The reflectors are placed on the reference plane with the dried sample down looking facing in about 0.5 mm distance the up looking detector window. The reflectors are resting on 3 steel balls defining precisely the reference plane for the adjustment procedure. As the rotation axis of the module is in the plane of the reflector surface, angle dependent experiments can be made to distinguish between film and particulate type contamination of samples. Operating with a Mo anode at 50 kV and 40 mA with a closely attached multilayer monochromator and using a 10 mm 2 KETEK silicon drift detector with 8 μm Be window, a sensitivity of 70 cps/ng for Rb was measured and detection limits of 2 pg were obtained

Silicon Microleaks for Inlets of Mass Spectrometers

Science.gov (United States)

Harpold, Dan; Hasso, Niemann; Jamieson, Brian G.; Lynch, Bernard A.

2009-01-01

Microleaks for inlets of mass spectrometers used to analyze atmospheric gases can be fabricated in silicon wafers by means of photolithography, etching, and other techniques that are commonly used in the manufacture of integrated circuits and microelectromechanical systems. The microleaks serve to limit the flows of the gases into the mass-spectrometer vacuums to specified very small flow rates consistent with the capacities of the spectrometer vacuum pumps. There is a need to be able to precisely tailor the dimensions of each microleak so as to tailor its conductance to a precise low value. (As used here, "conductance" signifies the ratio between the rate of flow in the leak and the pressure drop from the upstream to the downstream end of the leak.) To date, microleaks have been made, variously, of crimped metal tubes, pulled glass tubes, or frits. Crimped-metal and pulled-glass-tube microleaks cannot readily be fabricated repeatably to precise dimensions and are susceptible to clogging with droplets or particles. Frits tend to be differentially chemically reactive with various gas constituents and, hence, to distort the gas mixtures to be analyzed. The present approach involving microfabrication in silicon largely overcomes the disadvantages of the prior approaches.

Thermodynamic modelling of phase equilibrium in system Ti-B-Si-C, synthesis and phases composition of borides and carbides layers on titanic alloyVT-1 at electron beam treatment in vacuum

Science.gov (United States)

Smirnyagina, N. N.; Khaltanova, V. M.; Lapina, A. E.; Dasheev, D. E.

2017-01-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VT-1 are generated at diffused saturation in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

Vacuum Gap Microstrip Microwave Resonators for 2.5-D Integration in Quantum Computing

International Nuclear Information System (INIS)

Lewis, Rupert M.; Henry, Michael David; Schroeder, Katlin

2017-01-01

We demonstrate vacuum gap λ/2 microwave resonators as a route toward higher integration in superconducting qubit circuits. The resonators are fabricated from pieces on two silicon chips bonded together with an In-Sb bond. Measurements of the devices yield resonant frequencies in good agreement with simulations. Furthermore, we discuss creating low loss circuits in this geometry.

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Science.gov (United States)

Mishina, H.; Buckley, D. H.

1984-01-01

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Vacuum-Flex Figuring of Primary Telescope Mirrors

Science.gov (United States)

Albin, E. F. M.

2004-12-01

In the current investigation, details on the construction and performance of a vacuum-flexed (i.e., figured) 51 cm (20-inch) mirror, with a fast f/4 focal ratio, are presented. A vacuum has the chief advantage of being able to pull with a uniform or isotropic stress across a large surface area, which will naturally form a parabolic surface. The essence of the idea is to grind and polish a spherical mirror and then warp or flex it into a near perfect paraboloid, thus avoiding tedious figuring altogether. To date, telescope makers around the globe have experimented with small flexed mirrors with considerable success. In these instances, mirrors have been flexed by exerting tension on a bolt or sponge-pad adhered to the back of the mirror. The prototype mirror consists of two 51 cm disks of plate glass -- each slumped to an f/4 focal ratio. The front-plate (19 mm in thickness) is separated from the back-plate (13 mm in thickness) back a flexible 9.5 mm air filled gasket. Although the rubber gasket makes a fairly good vacuum seal, silicon cement was placed about the outer edge in order to produce a perfectly tight seal. A vacuum of 8 kPa on the back of the mirror resulted in approximately 164 kilograms of negative pressure, which is required to flex the mirror into the required paraboloid. Ronchi test show a nice smooth paraboloid free from astigmatism while foucault zonal measurements display a figure better than 1/20 wave. Preliminary star testing show promising results as well. Vacuum-flexed mirrors may have benefits for both amateur and professional telescope makers alike. A US patent is pending on the aforementioned design.

Effect of Silicon on Desulfurization of Aluminum-killed Steels

Science.gov (United States)

Roy, Debdutta

controlled by mass transfer in the metal and slag phase mass transfer has a minor effect on the overall desulfurization kinetics. The model results are in agreement with the experimental data for the change in sulfur, silicon and aluminum contents with time which renders credibility to the underlying hypothesis of the kinetic model. Although the change of sulfur content with time is not very sensitive to the activity data source, the change of aluminum and silicon contents with time depend on the activity data source. The experimental results demonstrate that if the silicon content in the steel is high enough, the silicon can reduce the alumina from the slag and thus the steel melt will pick up aluminum. This can cause significant savings in aluminum consumption. For most of the slag compositions used in the experiments, the overall mass transfer is only limited by the steel phase and the slag phase mass transfer can be neglected for most practical cases. Mass balance calculations in the experiments support the basis of the model and also show that with respect to aluminum consumption, silica reduction is the main aluminum consuming (or production) reaction and the desulfurization reaction is only a secondary consumer of aluminum. Results from the plant trials conducted to test the effect of silicon on ladle desulfurization show that the rate and extent of desulfurization increase with the increase of the initial Si content, so in the ladle refining process, adding all the silicon in the beginning with the aluminum and the fluxes will be beneficial and could save considerable processing time at the ladle. The aluminum consumption for the heats with silicon added in the beginning (both in terms of the Al added to the steel and as slag deoxidants) is considerably lower compared to the cases where the silicon is added at the end. However, on a relative cost term, aluminum and silicon are similarly priced so substitution would not offer a major cost advantage.

Strong coupling of a single electron in silicon to a microwave photon

Science.gov (United States)

Mi, X.; Cady, J. V.; Zajac, D. M.; Deelman, P. W.; Petta, J. R.

2017-01-01

Silicon is vital to the computing industry because of the high quality of its native oxide and well-established doping technologies. Isotopic purification has enabled quantum coherence times on the order of seconds, thereby placing silicon at the forefront of efforts to create a solid-state quantum processor. We demonstrate strong coupling of a single electron in a silicon double quantum dot to the photonic field of a microwave cavity, as shown by the observation of vacuum Rabi splitting. Strong coupling of a quantum dot electron to a cavity photon would allow for long-range qubit coupling and the long-range entanglement of electrons in semiconductor quantum dots.

Ultraviolet /UV/ sensitive phosphors for silicon imaging detectors

Science.gov (United States)

Viehmann, W.; Cowens, M. W.; Butner, C. L.

1981-01-01

The fluorescence properties of UV sensitive organic phosphors and the radiometric properties of phosphor coated silicon detectors in the VUV, UV, and visible wavelengths are described. With evaporated films of coronene and liumogen, effective quantum efficiencies of up to 20% have been achieved on silicon photodiodes in the vacuum UV. With thin films of methylmethacrylate (acrylic), which are doped with organic laser dyes and deposited from solution, detector quantum efficiencies of the order of 15% for wavelengths of 120-165 nm and of 40% for wavelengths above 190 nm have been obtained. The phosphor coatings also act as antireflection coatings and thereby enhance the response of coated devices throughout the visible and near IR.

A novel one-pot room-temperature synthesis route to produce very small photoluminescent silicon nanocrystals

Science.gov (United States)

Douglas-Gallardo, Oscar A.; Burgos-Paci, Maxi A.; Mendoza-Cruz, Rubén; Putnam, Karl G.; Josefina Arellano-Jiménez, M.; José-Yacamán, Miguel; Mariscal, Marcelo M.; Macagno, Vicente A.; Sánchez, Cristián G.; Pérez, Manuel A.

2018-03-01

A novel strategy to synthesize photoluminescent silicon nanocrystals (SiNCs) from a reaction between tetraethylorthosilicate (TEOS) and trimethyl-hexadecyl-ammonium borohydride (CTABH4) in organic solvent is presented. The formation reaction occurs spontaneously at room temperature in homogeneous phase. The produced silicon nanocrystals are characterized by using their photoluminescent properties and via HRTEM. In addition, theoretical calculations of the optical absorption spectrum of silicon quantum dots in vacuum with different sizes and surface moieties were performed in order to compare with the experimental findings. The new chemical reaction is simple and can be implemented to produce silicon nanocrystal with regular laboratory materials by performing easy and safe procedures. [Figure not available: see fulltext.

Strain of laser annealed silicon surfaces

Science.gov (United States)

Nemanich, R. J.; Haneman, D.

1982-05-01

High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10-2-10-3 in all except the polished samples.

Effect of 60Co γ-rays irradiation on rice straw fibre structure and enzyme hydrolyzation

International Nuclear Information System (INIS)

Chen Jingping; Li Wenge; Peng Ling; Wang Keqin; Xiong Xingyao

2008-01-01

The effect of improving enzyme hydrolyze of rice straw was estimated with treating dry rice straw and raw fiber by 60 Co γ-rays irradiation. the water-soluble deoxidize carbohydrate and total carbohydrate of 60 Co γ-rays irradiated rice straw and raw fibres were measured by DNS method and vitrol-phenol method. The changes of deoxidize carbohydrate groups of irradiated hydrolyzing rice straw were analyzed by gas chromatography. The organism structures of irradiated rice straw were scanned by electron microscope, the results showed that 1000-1500 kGy 60 Co γ-irradiation doses effectively destroyed rice straw's organism structures, especially the silicon crystal structures, and along with irradiation doses increased the breakage degree enlarged significantly. The contents of the water-soluble deoxidize carbohydrate and total carbohydrate of rice straw increased significantly. treated by both irradiation and enzyme, the cellulose transform rate of rice straw was 88.7%, which is better than that only treated by 60 Co γ-irradiation or enzyme. The content of water-solubility deoxidize carbohydrate of the treated rice straw was 214.4 mg/g and the total carbohydrate of straw was 758.5 mg/g. The contents of mannose, galactose, glucose, arabinose and xylose increased significantly, among those carbohydrate, the glucose's increment was the largest and account for 62.64%, and mannose's increments was the second. The contents of lignin of the rice straw were not influenced obviously by irradiation treatment. (authors)

The Use of the Molecular Adsorber Coating Technology to Mitigate Vacuum Chamber Contamination During Pathfinder Testing for the James Webb Space Telescope

Science.gov (United States)

Abraham, Nithin S.; Hasegawa, Mark M.; Wooldridge, Eve M.; Henderson-Nelson, Kelly A.

2016-01-01

As a coating made of highly porous zeolite materials, the Molecular Adsorber Coating (MAC) was developed to capture outgassed molecular contaminants, such as hydrocarbons and silicones. For spaceflight applications, the adsorptive capabilities of the coating can alleviate on-orbit outgassing concerns on or near sensitive surfaces and instruments within the spacecraft. Similarly, this sprayable paint technology has proven to be significantly beneficial for ground based space applications, in particular, for vacuum chamber environments. This paper describes the recent use of the MAC technology during Pathfinder testing of the Optical Ground Support Equipment (OGSE) for the James Webb Space Telescope (JWST) at NASA Johnson Space Center (JSC). The coating was used as a mitigation tool to entrap persistent outgassed contaminants, specifically silicone based diffusion pump oil, from within JSC's cryogenic optical vacuum chamber test facility called Chamber A. This paper summarizes the sample fabrication, installation, laboratory testing, post-test chemical analysis results, and future plans for the MAC technology, which was effectively used to protect the JWST test equipment from vacuum chamber contamination.

Chemical reaction at ferromagnet/oxide interface and its influence on anomalous Hall effect

International Nuclear Information System (INIS)

Liu, Yi-Wei; Teng, Jiao; Zhang, Jing-Yan; Liu, Yang; Chen, Xi; Li, Xu-Jing; Feng, Chun; Wang, Hai-Cheng; Li, Ming-Hua; Yu, Guang-Hua; Wu, Zheng-Long

2014-01-01

Chemical reactions at the ferromagnet/oxide interface in [Pt/Fe] 3 /MgO and [Pt/Fe] 3 /SiO 2 multilayers before and after annealing were investigated by X-ray photoelectron spectroscopy. The results show that Fe atoms at the Fe/MgO interface were completely oxidized in the as-grown state and significantly deoxidized after vacuum annealing. However, only some of the Fe atoms at the Fe/SiO 2 interface were oxidized and rarely deoxidized after annealing. The anomalous Hall effect was modified by this interfacial chemical reaction. The saturation anomalous Hall resistance (R xy ) was greatly increased in the [Pt/Fe] 3 /MgO multilayers after annealing and was 350% higher than that in the as-deposited film, while R xy of the [Pt/Fe] 3 /SiO 2 multilayer only increased 10% after annealing.

Investigation of the heating behavior of carbide-bonded graphene coated silicon wafer used for hot embossing

Science.gov (United States)

Yang, Gao; Li, Lihua; Lee, Wing Bun; Ng, Man Cheung; Chan, Chang Yuen

2018-03-01

A recently developed carbide-bonded graphene (CBG) coated silicon wafer was found to be an effective micro-patterned mold material for implementing rapid heating in hot embossing processes owing to its superior electrical and thermal conductivity, in addition to excellent mechanical properties. To facilitate the achievement of precision temperature control in the hot embossing, the heating behavior of a CBG coated silicon wafer sample was experimentally investigated. First, two groups of controlled experiments were conducted for quantitatively evaluating the influence of the main factors such as the vacuum pressure and gaseous environment (vacuum versus nitrogen) on its heating performance. The electrical and thermal responses of this sample under a voltage of 60 V were then intensively analyzed, and revealed that it had somewhat semi-conducting properties. Further, we compared its thermal profiles under different settings of the input voltage and current limiting threshold. Moreover, the strong temperature dependence of electrical resistance for this material was observed and determined. Ultimately, the surface temperature of CBG coated silicon wafer could be as high as 1300 ℃, but surprisingly the graphene coating did not detach from the substrate under such an elevated temperature due to its strong thermal coupling with the silicon wafer.

Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

International Nuclear Information System (INIS)

Martin, I.; Vetter, M.; Orpella, A.; Voz, C.; Puigdollers, J.; Alcubilla, R.; Kharchenko, A.V.; Roca i Cabarrocas, P.

2004-01-01

A completely dry low-temperature process has been developed to passivate 3.3 Ω cm p-type crystalline silicon surface with excellent results. Particularly, we have investigated the use of a hydrogen plasma treatment, just before hydrogenated amorphous silicon carbide (a-SiC x :H) deposition, without breaking the vacuum. We measured effective lifetime, τ eff , through a quasi-steady-state photoconductance technique. Experimental results show that hydrogen plasma treatment improves surface passivation compared to classical HF dip. S eff values lower than 19 cm s -1 were achieved using a hydrogen plasma treatment and an a-SiC x :H film deposited at 300 deg. C

The silicon vertex locator for the LHCb upgrade

CERN Document Server

Head, Tim

2014-01-01

The upgrade of the LHCb experiment, planned for 2018, will transform the entire readout to a triggerless system being read out at 40 MHz. The upgraded silicon vertex detector (VELO) must be light weight, radiation hard, and compatible with LHC vacuum requirements. It must be capable of fast pattern recognition, fast track reconstruction and high precision vertexing. This challenge is being met with a new VELO design based on hybrid pixel detectors positioned to within 5 mm of the LHC colliding beams. The detector will be shielded from the beam by a View the MathML source~300μm thick aluminium foil. Evaporative CO2 coolant circulating in micro-channels embedded in a thin silicon substrate will be used for cooling.

Differential ultrahigh-vacuum pump for electron microscope

International Nuclear Information System (INIS)

Kroshkov, A.A.; Aseev, A.L.; Baranova, E.A.; Latyshev, A.V.; Yakushenko, O.A.

1985-01-01

A differential cryogenic pump for the JEM-7A microscope is described. It reduces the vacuum pressure in the region of the specimen. The device allows tilting and movement of the specimen, direct electrical heating, measurement of specimen temperature, and deposition of films of various substances on the specimen surface. A diagram of the pump shows its placement in the objective chamber of the microscope. The fittings are equipped with bellows and provide for input and output of liquid nitrogen or liquid-helium vapor coolants. The enumerated results attest to a reduction of residual atmospheric pressure in the area of the specimen and the possibility of producing a pure silicon surface in the described device

Photo and electroluminescence of porous silicon layers

International Nuclear Information System (INIS)

Keshmini, S.H.; Samadpour, S.; Haji-Ali, E.; Rokn-Abadi, M.R.

1995-01-01

Porous silicon (PSi) layers were prepared by both chemical and electrochemical methods on n- and p-type Si substrates. In the former technique, light emission was obtained from p-type and n-type samples. It was found that intense light illumination during the preparation process was essential for PSi formation on n-type substrates. An efficient electrochemical cell with some useful features was designed for electrochemical etching of silicon. Various preparation parameters were studied and photoluminescence emissions ranging from dark red to light blue were obtained from PSi samples prepared on p-type substrates. N-type samples produced emission ranging from dark red to orange yellow. Electroluminescence of porous silicon samples showed that the color of the emission was the same as the photoluminescence color of the sample, and its intensity and duration depended on the current density passed through the sample. The effects of exposure of samples to air, storage in vacuum and heat treatment in air on luminescence intensity of the samples and preparation of patterned porous layers were also studied. (author)

Investigations by the surface photo-E. M. F. method of the effect of low temperature vacuum baking of an Si(111) surface

Energy Technology Data Exchange (ETDEWEB)

Dlugosz, B.; Kochowski, S.

1982-02-26

Investigations of the effect of low temperature vacuum baking on the surface potential of silicon are reported. The surface potential Vsub(s0) was measured by the surface photo-e.m.f. method. No noticeable changes in Vsub(s0) occurred after baking of samples which had been freshly etched in HF for 2 h in a vacuum of 6.6 x 10/sup -3/ Pa (5 x 10/sup -5/ Torr) at temperatures of 573, 623 and 723 K. Radical changes were observed when the samples had been aged in air for 2 months before vacuum baking. These results suggest that the direction and the value of the surface potential changes during vacuum baking are determined by the initial surface state.

Leybold vacuum handbook

CERN Document Server

Diels, K; Diels, Kurt

1966-01-01

Leybold Vacuum Handbook presents a collection of data sets that are essential for numerical calculation of vacuum plants and vacuum processes. The title first covers vacuum physics, which includes gas kinetics, flow phenomena, vacuum gauges, and vapor removal. Next, the selection presents data on vacuum, high vacuum process technology, and gas desorption and gettering. The text also deals with materials, vapor pressure, boiling and melting points, and gas permeability. The book will be of great interest to engineers and technicians that deals with vacuum related technologies.

Vacuum Technology

Energy Technology Data Exchange (ETDEWEB)

Biltoft, P J

2004-10-15

The environmental condition called vacuum is created any time the pressure of a gas is reduced compared to atmospheric pressure. On earth we typically create a vacuum by connecting a pump capable of moving gas to a relatively leak free vessel. Through operation of the gas pump the number of gas molecules per unit volume is decreased within the vessel. As soon as one creates a vacuum natural forces (in this case entropy) work to restore equilibrium pressure; the practical effect of this is that gas molecules attempt to enter the evacuated space by any means possible. It is useful to think of vacuum in terms of a gas at a pressure below atmospheric pressure. In even the best vacuum vessels ever created there are approximately 3,500,000 molecules of gas per cubic meter of volume remaining inside the vessel. The lowest pressure environment known is in interstellar space where there are approximately four molecules of gas per cubic meter. Researchers are currently developing vacuum technology components (pumps, gauges, valves, etc.) using micro electro mechanical systems (MEMS) technology. Miniature vacuum components and systems will open the possibility for significant savings in energy cost and will open the doors to advances in electronics, manufacturing and semiconductor fabrication. In conclusion, an understanding of the basic principles of vacuum technology as presented in this summary is essential for the successful execution of all projects that involve vacuum technology. Using the principles described above, a practitioner of vacuum technology can design a vacuum system that will achieve the project requirements.

Real-time transmission electron microscope observation of gold nanoclusters diffusing into silicon at room temperature

International Nuclear Information System (INIS)

Ishida, Tadashi; Nakajima, Yuuki; Fujita, Hiroyuki; Endo, Junji; Collard, Dominique

2009-01-01

Gold diffusion into silicon at room temperature was observed in real time with atomic resolution. Gold nanoclusters were formed on a silicon surface by an electrical discharge between a silicon tip and a gold coated tip inside an ultrahigh-vacuum transmission electron microscope (TEM) specimen chamber. At the moment of the gold nanocluster deposition, the gold nanoclusters had a crystalline structure. The crystalline structure gradually disappeared due to the interdiffusion between silicon and gold as observed after the deposition of gold nanoclusters. The shape of the nanocluster gradually changed due to the gold diffusion into the damaged silicon. The diffusion front between silicon and gold moved toward the silicon side. From the observations of the diffusion front, the gold diffusivity at room temperature was extracted. The extracted activation energy, 0.21 eV, matched the activation energy in bulk diffusion between damaged silicon and gold. This information is useful for optimizing the hybridization between solid-state and biological nanodevices in which gold is used as an adhesive layer between the two devices.

Indian Vacuum Society: The Indian Vacuum Society

Science.gov (United States)

Saha, T. K.

2008-03-01

The Indian Vacuum Society (IVS) was established in 1970. It has over 800 members including many from Industry and R & D Institutions spread throughout India. The society has an active chapter at Kolkata. The society was formed with the main aim to promote, encourage and develop the growth of Vacuum Science, Techniques and Applications in India. In order to achieve this aim it has conducted a number of short term courses at graduate and technician levels on vacuum science and technology on topics ranging from low vacuum to ultrahigh vacuum So far it has conducted 39 such courses at different parts of the country and imparted training to more than 1200 persons in the field. Some of these courses were in-plant training courses conducted on the premises of the establishment and designed to take care of the special needs of the establishment. IVS also regularly conducts national and international seminars and symposia on vacuum science and technology with special emphasis on some theme related to applications of vacuum. A large number of delegates from all over India take part in the deliberations of such seminars and symposia and present their work. IVS also arranges technical visits to different industries and research institutes. The society also helped in the UNESCO sponsored post-graduate level courses in vacuum science, technology and applications conducted by Mumbai University. The society has also designed a certificate and diploma course for graduate level students studying vacuum science and technology and has submitted a syllabus to the academic council of the University of Mumbai for their approval, we hope that some colleges affiliated to the university will start this course from the coming academic year. IVS extended its support in standardizing many of the vacuum instruments and played a vital role in helping to set up a Regional Testing Centre along with BARC. As part of the development of vacuum education, the society arranges the participation of

Investigation of the generation of singlet oxygen in ensembles of photoexcited silicon nanocrystals by electron paramagnetic resonance spectroscopy

International Nuclear Information System (INIS)

Konstantinova, E. A.; Demin, V. A.; Timoshenko, V. Yu.

2008-01-01

The generation of singlet oxygen is investigated and its concentration upon photoexcitation of silicon nanocrystals in porous silicon layers is determined using electron paramagnetic resonance spectroscopy. The relaxation times of spin centers, i.e., silicon dangling bonds, in vacuum and in an oxygen atmosphere in the dark and under illumination of the samples are measured for the first time. It is revealed that the spin-lattice relaxation in porous silicon is retarded as compared to that in a single-crystal substrate. From analyzing experimental data, a microscopic model is proposed for interaction of oxygen molecules in the triplet state and spin centers at the surface of silicon nanocrystals. The results obtained have demonstrated that porous silicon holds promise for the use as a photosensitizer of molecular oxygen in biomedical applications

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming

2014-10-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Silicon wafer wettability and aging behaviors: Impact on gold thin-film morphology

KAUST Repository

Yang, Xiaoming; Zhong, Zhaowei; Diallo, Elhadj; Wang, Zhihong; Yue, Weisheng

2014-01-01

This paper reports on the wettability and aging behaviors of the silicon wafers that had been cleaned using a piranha (3:1 mixture of sulfuric acid (H2SO4, 96%) and hydrogen peroxide (H2O 2, 30%), 120 °C), SC1 (1:1:5 mixture of NH4OH, H 2O2 and H2O, at 80°C) or HF solution (6 parts of 40% NH4F and 1 part of 49% HF, at room temperature) solution, and treated with gaseous plasma. The silicon wafers cleaned using the piranha or SC1 solution were hydrophilic, and the water contact angles on the surfaces would increase along with aging time, until they reached the saturated points of around 70°. The contact angle increase rate of these wafers in a vacuum was much faster than that in the open air, because of loss of water, which was physically adsorbed on the wafer surfaces. The silicon wafers cleaned with the HF solution were hydrophobic. Their contact angle decreased in the atmosphere, while it increased in the vacuum up to 95°. Gold thin films deposited on the hydrophilic wafers were smoother than that deposited on the hydrophobic wafers, because the numerous oxygen groups formed on the hydrophilic surfaces would react with gold adatoms in the sputtering process to form a continuous thin film at the nucleation stage. The argon, nitrogen, oxygen gas plasma treatments could change the silicon wafer surfaces from hydrophobic to hydrophilic by creating a thin (around 2.5 nm) silicon dioxide film, which could be utilized to improve the roughness and adhesion of the gold thin film. © 2014 Elsevier Ltd. All rights reserved.

Iron-titanium-mischmetal alloys for hydrogen storage

Science.gov (United States)

Sandrock, Gary Dale

1978-01-01

A method for the preparation of an iron-titanium-mischmetal alloy which is used for the storage of hydrogen. The alloy is prepared by air-melting an iron charge in a clay-graphite crucible, adding titanium and deoxidizing with mischmetal. The resultant alloy contains less than about 0.1% oxygen and exhibits a capability for hydrogen sorption in less than half the time required by vacuum-melted, iron-titanium alloys.

Overview of CMS robotic silicon module assembly hardware based on Aerotech Gantry Positioning system.

CERN Multimedia

Honma, Alan

1999-01-01

The goal of the robotic silicon module assembly pilot project is to fully automate the gluing and pick and placement of silicon sensors and front-end hybrid onto a carbon-fibre frame. The basis for thesystem is the Aerotech Gantry Positioning System (AGS10000) machineshown in the centre of the picture. To the left is the PC which contains the controller card and runs the user interface. To the rightis the rack of associated electronics which interfaces with the CERNbuilt tooling and vacuum chuck system.

Chemical resistivity of self-assembled monolayer covalently attached to silicon substrate to hydrofluoric acid and ammonium fluoride

Science.gov (United States)

Saito, N.; Youda, S.; Hayashi, K.; Sugimura, H.; Takai, O.

2003-06-01

Self-assembled monolayers (SAMs) were prepared on hydrogen-terminated silicon substrates through chemical vapor deposition using 1-hexadecene (HD) as a precursor. The HD-SAMs prepared in an atmosphere under a reduced pressure (≈50 Pa) showed better chemical resistivities to hydrofluoric acid and ammonium fluoride (NH 4F) solutions than that of an organosilane SAM formed on oxide-covered silicon substrates. The surface covered with the HD-SAM was micro-patterned by vacuum ultraviolet photolithography and consequently divided into two areas terminated with HD-SAM or silicon dioxide. This micro-patterned sample was immersed in a 40 vol.% NH 4F aqueous solution. Surface images obtained by an optical microscopy clearly show that the micro-patterns of HD-SAM/silicon dioxide were successfully transferred into the silicon substrate.

Research of morphology and structure of 3C–SiC thin films on silicon by electron microscopy and X-ray diffractometry

Directory of Open Access Journals (Sweden)

Alexander S. Gusev

2015-12-01

Full Text Available Thin films of silicon carbide possessing unique properties attract increasing attention of researchers both in the field of semiconductor physics and in the technology of new semiconductor devices for high power, RF and optoelectronics. The growth of the production of silicon carbide based devices promotes the search for more resource saving and safe SiC layer synthesis technologies. Potential method is pulse laser deposition (PLD in vacuum. This technology does not require the use of chemically aggressive and explosive gases and allows forming thin and continuous coatings with thicknesses of from several nanometers at relatively low substrate temperatures. Submicron thickness silicon carbide films have been grown on single crystal silicon by vacuum laser ablation of a ceramic target. The physical and technological parameters of silicon carbide thin film low temperature synthesis by PLD have been studied and, in particular, the effect of temperature and substrate crystalline orientation on the composition, structural properties and morphology of the surface of the experimental specimens has been analyzed. At above 500 °C the crystalline β-SiC phase forms on Si (100 and (111. At a substrate temperature of 950 °C the formation of textured heteroepitaxial 3C–SiC films was observed.

Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

Science.gov (United States)

McKee, Rodney A.; Walker, Frederick J.

1993-01-01

A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

Vacuum mechatronics

Science.gov (United States)

Hackwood, Susan; Belinski, Steven E.; Beni, Gerardo

1989-01-01

The discipline of vacuum mechatronics is defined as the design and development of vacuum-compatible computer-controlled mechanisms for manipulating, sensing and testing in a vacuum environment. The importance of vacuum mechatronics is growing with an increased application of vacuum in space studies and in manufacturing for material processing, medicine, microelectronics, emission studies, lyophylisation, freeze drying and packaging. The quickly developing field of vacuum mechatronics will also be the driving force for the realization of an advanced era of totally enclosed clean manufacturing cells. High technology manufacturing has increasingly demanding requirements for precision manipulation, in situ process monitoring and contamination-free environments. To remove the contamination problems associated with human workers, the tendency in many manufacturing processes is to move towards total automation. This will become a requirement in the near future for e.g., microelectronics manufacturing. Automation in ultra-clean manufacturing environments is evolving into the concept of self-contained and fully enclosed manufacturing. A Self Contained Automated Robotic Factory (SCARF) is being developed as a flexible research facility for totally enclosed manufacturing. The construction and successful operation of a SCARF will provide a novel, flexible, self-contained, clean, vacuum manufacturing environment. SCARF also requires very high reliability and intelligent control. The trends in vacuum mechatronics and some of the key research issues are reviewed.

Steel bonded dense silicon nitride compositions and method for their fabrication

Science.gov (United States)

Landingham, Richard L.; Shell, Thomas E.

1987-01-01

A two-stage bonding technique for bonding high density silicon nitride and other ceramic materials to stainless steel and other hard metals, and multilayered ceramic-metal composites prepared by the technique are disclosed. The technique involves initially slurry coating a surface of the ceramic material at about 1500.degree. C. in a vacuum with a refractory material and the stainless steel is then pressure bonded to the metallic coated surface by brazing it with nickel-copper-silver or nickel-copper-manganese alloys at a temperature in the range of about 850.degree. to 950.degree. C. in a vacuum. The two-stage bonding technique minimizes the temperature-expansion mismatch between the dissimilar materials.

Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process

KAUST Repository

Ghoneim, Mohamed T.

2013-11-20

We report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show that our approach to transform bulk silicon (100) into a flexible fabric adds an inherent advantage of enabling higher integration density dynamic random access memory (DRAM) on the same chip area. Our approach is to release an ultra-thin silicon (100) fabric (25 μm thick) from the bulk silicon wafer, then build MIMCAPs using sputtered aluminium electrodes and successive atomic layer depositions (ALD) without break-ing the vacuum of a high-κ aluminium oxide sandwiched between two tantalum nitride layers. This result shows that we can obtain flexible electronics on silicon without sacrificing the high density integration aspects and also utilize the non-planar geometry associated with fabrication process to obtain a higher integration density compared to bulk silicon integration due to an increased normalized capacitance per unit planar area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Investigating reliability attributes of silicon photovoltaic cells - An overview

Science.gov (United States)

Royal, E. L.

1982-01-01

Reliability attributes are being developed on a wide variety of advanced single-crystal silicon solar cells. Two separate investigations: cell-contact integrity (metal-to-silicon adherence), and cracked cells identified with fracture-strength-reducing flaws are discussed. In the cell-contact-integrity investigation, analysis of contact pull-strength data shows that cell types made with different metallization technologies, i.e., vacuum, plated, screen-printed and soldered, have appreciably different reliability attributes. In the second investigation, fracture strength was measured using Czochralski wafers and cells taken at various stages of processing and differences were noted. Fracture strength, which is believed to be governed by flaws introduced during wafer sawing, was observed to improve (increase) after chemical polishing and other process steps that tend to remove surface and edge flaws.

Ambient plasma treatment of silicon wafers for surface passivation recovery

Science.gov (United States)

Ge, Jia; Prinz, Markus; Markert, Thomas; Aberle, Armin G.; Mueller, Thomas

2017-08-01

In this work, the effect of an ambient plasma treatment powered by compressed dry air on the passivation quality of silicon wafers coated with intrinsic amorphous silicon sub-oxide is investigated. While long-time storage deteriorates the effective lifetime of all samples, a short ambient plasma treatment improves their passivation qualities. By studying the influence of the plasma treatment parameters on the passivation layers, an optimized process condition was identified which even boosted the passivation quality beyond its original value obtained immediately after deposition. On the other hand, the absence of stringent requirement on gas precursors, vacuum condition and longtime processing makes the ambient plasma treatment an excellent candidate to replace conventional thermal annealing in industrial heterojunction solar cell production.

VUV-sensitive silicon-photomultipliers for the nEXO-experiment

Energy Technology Data Exchange (ETDEWEB)

Wrede, Gerrit; Bayerlein, Reimund; Hufschmidt, Patrick; Jamil, Ako; Schneider, Judith; Wagenpfeil, Michael; Ziegler, Tobias; Hoessl, Juergen; Anton, Gisela; Michel, Thilo [ECAP, Friedrich-Alexander-Universitaet Erlangen-Nuernberg (Germany)

2016-07-01

The nEXO (next Enriched Xenon Observatory) experiment will search for the neutrinoless double beta decay of Xe-136 with a liquid xenon TPC (Time ProjectionChamber). The sensitivity of the experiment is related to the energy resolution, which itself depends on the accuracies of the measurements of the amount of drifting electrons and the number of scintillation photons with their wavelength being in the vacuum ultraviolet band. Silicon Photomultipliers (SiPM) shall be used for the detection of the scintillation light, since they can be produced extremely radiopure. Commercially available SiPM do not fulfill all requirements of the nEXO experiment, thus a dedicated development is necessary. To characterize the silicon photomultipliers, we have built a test apparatus for xenon liquefaction, in which a VUV-sensitive photomultiplier tube can be operated together with the SiPM. In this contribution we present our apparatus for the SiPM characterization measurements and our latest results on the test of the silicon photomultipliers for the detection of xenon scintillation light.

Deposition and characterization of ZnS/Si heterojunctions produced by vacuum evaporation

Science.gov (United States)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland

1988-01-01

Isotype heterojunctions of ZnS (lattice constant 5.41 A) were grown on silicon (lattice constant 5.43 A) p-n junctions to form a minority-carrier mirror. The deposition process was vacuum evaporation from a ZnS powder source onto a heated (450 C) substrate. Both planar (100) and textured (111) surfaces were used. A reduction of the minority-carrier recombination at the surface was seen from increased short-wavelength quantum response and increased illuminated open-circuit voltage. The minority-carrier diffusion length was not degraded by the process.

Radiative thermal emission from silicon nanoparticles: a reversed story from quantum to classical theory

International Nuclear Information System (INIS)

Roura, P.; Costa, J.

2002-01-01

Among the rush of papers published after the discovery of visible luminescence in porous silicon, a number of them claimed that an extraordinary behaviour had been found. However, after five years of struggling with increasingly sophisticated but not completely successful models, it was finally demonstrated that it was simply thermal radiation. Here, we calculate thermal radiation emitted by silicon nanoparticles when irradiated in vacuum with a laser beam. If one interprets this radiation as being photoluminescence, its properties appear extraordinary: non-exponential excitation and decay transients and a supralinear dependence on laser power. Within the (quantum) theory of photoluminescence, this behaviour can be interpreted as arising from a non-usual excitation mechanism known as multiphoton excitation. Although this erroneous interpretation has, to some extent, a predictive power, it is unable to give a sound explanation for the quenching of radiation when particles are not irradiated in vacuum but inside a gas. The real story of this error is presented both to achieve a deeper understanding of the radiative thermal emission of nanoparticles and as a matter of reflection on scientific activity. (author)

Implementation of complex nanosystems using a versatile ultrahigh vacuum nonlithographic technique

International Nuclear Information System (INIS)

Das, Biswajit; Banerjee, Arghya

2007-01-01

We have developed an ultrahigh vacuum technique for the implementation of complex nanosystems incorporating nonlithographic nanoparticles, ohmic contact metals and isolation dielectrics. The technique is compatible with the silicon integrated circuit manufacturing process and is versatile, allowing the deposition of nanoparticles of any metal, semiconductor or insulator with diameters as small as 2 nm with less than 5% size variation. In addition, the technique allows the creation of multi-layered structures of nanoparticles of different dimensions. The flexibility and the versatility of the technique have been demonstrated by depositing nanoparticles of various materials as well as fabricating multi-layered structures incorporating nanoparticles

MEA vacuum system

International Nuclear Information System (INIS)

Stroo, R.; Schwebke, H.; Heine, E.

1984-01-01

This report describes construction and operation of the MEA vacuum system of NIKHEF (Netherlands). First, the klystron vacuum system, beam transport system, diode pump and a triode pump are described. Next, the isolation valve and the fast valves of the vacuum system are considered. Measuring instruments, vacuum system commands and messages of failures are treated in the last chapter. (G.J.P.)

High Detectivity Graphene-Silicon Heterojunction Photodetector.

Science.gov (United States)

Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

2016-02-03

A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Comparative TEM study of bonded silicon/silicon interfaces fabricated by hydrophilic, hydrophobic and UHV wafer bonding

International Nuclear Information System (INIS)

Reznicek, A.; Scholz, R.; Senz, S.; Goesele, U.

2003-01-01

Wafers of Czochralski-grown silicon were bonded hydrophilically, hydrophobically and in ultrahigh vacuum (UHV) at room temperature. Wafers bonded hydrophilically adhere together by hydrogen bonds, those bonded hydrophobically by van der Waals forces and UHV-bonded ones by covalent bonds. Annealing the pre-bonded hydrophilic and hydrophobic wafer pairs in argon for 2 h at different temperatures increases the initially low bonding energy. UHV-bonded wafer pairs were also annealed to compare the results. Transmission electron microscopy (TEM) investigations show nano-voids at the interface. The void density depends on the initial bonding strength. During annealing the shape, coverage and density of the voids change significantly

Characterization of X3 Silicon Detectors for the ELISSA Array at ELI-NP

Science.gov (United States)

Chesnevskaya, S.; Balabanski, D. L.; Choudhury, D.; Cognata, M. La; Constantin, P.; Filipescu, D. M.; Ghita, D. G.; Guardo, G. L.; Lattuada, D.; Matei, C.; Rotaru, A.; Spitaleri, C.; State, A.; Xu, Y.

2018-01-01

Position-sensitive silicon strip detectors represent one of the best solutions for the detection of charged particles as they provide good energy and position resolution over a large range of energies. A silicon array coupled with the gamma beams at the ELI-NP facility would allow measuring photodissociation reactions of interest for Big Bang Nucleosynthesis and on heavy nuclei intervening in the p-process. Forty X3 detectors for our ELISSA (ELI-NP Silicon Strip Detectors Array) project have been recently purchased and tested. We investigated several specifications, such as leakage currents, depletion voltage, and detector stability under vacuum. The energy and position resolution, and ballistic deficit were measured and analyzed. This paper presents the main results of our extensive testing. The measured energy resolution for the X3 detectors is better than results published for similar arrays (ANASEN or ORRUBA).

Insulation vacuum and beam vacuum overpressure release

CERN Document Server

Parma, V

2009-01-01

There is evidence that the incident of 19th September caused a high pressure build-up inside the cryostat insulation vacuum which the existing overpressure devices could not contain. As a result, high longitudinal forces acting on the insulation vacuum barriers developed and broke the floor and the floor fixations of the SSS with vacuum barriers. The consequent large longitudinal displacements of the SSS damaged chains of adjacent dipole cryo-magnets. Estimates of the helium mass flow and the pressure build- up experienced in the incident are presented together with the pressure build-up for an even more hazardous event, the Maximum Credible Incident (MCI). The strategy of limiting the maximum pressure by the installation of addition pressure relieve devices is presented and discussed. Both beam vacuum lines were ruptured during the incident in sector 3-4 giving rise to both mechanical damage and pollution of the system. The sequence, causes and effects of this damage will be briefly reviewed. We will then an...

Advanced light source vacuum policy and vacuum guidelines for beamlines and experiment endstations

International Nuclear Information System (INIS)

Hussain, Z.

1995-08-01

The purpose of this document is to: (1) Explain the ALS vacuum policy and specifications for beamlines and experiment endstations. (2) Provide guidelines related to ALS vacuum policy to assist in designing beamlines which are in accordance with ALS vacuum policy. This document supersedes LSBL-116. The Advanced Light Source is a third generation synchrotron radiation source whose beam lifetime depends on the quality of the vacuum in the storage ring and the connecting beamlines. The storage ring and most of the beamlines share a common vacuum and are operated under ultra-high-vacuum (UHV) conditions. All endstations and beamline equipment must be operated so as to avoid contamination of beamline components, and must include proper safeguards to protect the storage ring vacuum from an accidental break in the beamline or endstation vacuum systems. The primary gas load during operation is due to thermal desorption and electron/photon induced desorption of contaminants from the interior of the vacuum vessel and its components. The desorption rates are considerably higher for hydrocarbon contamination, thus considerable emphasis is placed on eliminating these sources of contaminants. All vacuum components in a beamline and endstation must meet the ALS vacuum specifications. The vacuum design of both beamlines and endstations must be approved by the ALS Beamline Review Committee (BRC) before vacuum connections to the storage ring are made. The vacuum design is first checked during the Beamline Design Review (BDR) held before construction of the beamline equipment begins. Any deviation from the ALS vacuum specifications must be approved by the BRC prior to installation of the equipment on the ALS floor. Any modification that is incorporated into a vacuum assembly without the written approval of the BRC is done at the user's risk and may lead to rejection of the whole assembly

Correlation of electrical conductivity and photoluminescence in nanoporous silicon

International Nuclear Information System (INIS)

Bouaicha, M.; Khardani, M.; Bessais, B.

2006-01-01

The effective electrical conductivity of p type porous silicon is determined both theoretically and experimentally for different porosities ranging from 30% to 80%. In this work, Effective Medium Approximation (EMA) model was used as a theoretical support. The porous silicon samples were prepared by the electrochemical etching method for different values of the anodic current. The porous material is assumed to be formed of three phases; vacuum, oxide and Si nanocrystallites. The analytical expression of the electrical conductivity of the Si nanocrystallites was established using the quantum confinement theory. This enables us to correlate the electrical conductivity of a PS layer, to the peak energy of its photoluminescence (PL) spectrum. A perfect agreement between the theoretical and the experimental electrical conductivity values was obtained for all prospected PS porosities. The results are discussed as regard to other works

Morphological and optical properties of silicon thin films by PLD

International Nuclear Information System (INIS)

Ayouchi, R.; Schwarz, R.; Melo, L.V.; Ramalho, R.; Alves, E.; Marques, C.P.; Santos, L.; Almeida, R.; Conde, O.

2009-01-01

Silicon thin films have been prepared on sapphire substrates by pulsed laser deposition (PLD) technique. The films were deposited in vacuum from a silicon target at a base pressure of 10 -6 mbar in the temperature range from 400 to 800 deg. C. A Q-switched Nd:YAG laser (1064 nm, 5 ns duration, 10 Hz) at a constant energy density of 2 J x cm -2 has been used. The influence of the substrate temperature on the structural, morphological and optical properties of the Si thin films was investigated. Spectral ellipsometry and atomic force microscopy (AFM) were used to study the thickness and the surface roughness of the deposited films. Surface roughness values measured by AFM and ellipsometry show the same tendency of increasing roughness with increased deposition temperature

A Silicon Nanomembrane Detector for Matrix-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometry (MALDI-TOF MS) of Large Proteins

OpenAIRE

Park, Jonghoo; Blick, Robert

2013-01-01

We describe a MALDI-TOF ion detector based on freestanding silicon nanomembrane technology. The detector is tested in a commercial MALDI-TOF mass spectrometer with equimolar mixtures of proteins. The operating principle of the nanomembrane detector is based on phonon-assisted field emission from these silicon nanomembranes, in which impinging ion packets excite electrons in the nanomembrane to higher energy states. Thereby the electrons can overcome the vacuum barrier and escape from the surf...

Synthesis and characterization of Ti-Si-C-N nanocomposite coatings prepared by a filtered vacuum arc method

Energy Technology Data Exchange (ETDEWEB)

Thangavel, Elangovan, E-mail: t.elangophy@gmail.com [Advanced Thin Film Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon 641-831 (Korea, Republic of); Center for Nano-Wear, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Seunghun; Nam, Kee-Seok; Kim, Jong-Kuk [Advanced Thin Film Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon 641-831 (Korea, Republic of); Kim, Do-Geun, E-mail: dogeunkim@kims.re.kr [Advanced Thin Film Research Group, Materials Processing Division, Korea Institute of Materials Science, Changwon 641-831 (Korea, Republic of)

2013-01-15

Highlights: Black-Right-Pointing-Pointer Preparation method was used as filtered vacuum arc (FVA) deposition. Black-Right-Pointing-Pointer Ternary coating obtained by using single carbon source with TMS gas. Black-Right-Pointing-Pointer Detailed discussion of chemical nature for these coating by using XPS. - Abstract: Ti-Si-C-N nanocomposite coatings were synthesized by a filtered vacuum arc (FVA) technique. A metal organic precursor, tetramethylsilane (TMS), was used as a source for silicon and carbon to deposit the Ti-Si-C-N nanocomposite coating with a Ti cathode source. The chemical and microstructural properties of the as-deposited coatings were systematically investigated using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and transmission electron microscopy (TEM). Nanoindentation and scratch tests were carried out to evaluate the mechanical and adhesion properties of the coatings. From the XPS analysis, it was found that the Si content in the coating increased from 2 to 16 at.% as the TMS flow rate was increased from 5 to 20 sccm. The TEM analysis clearly demonstrated that the coatings were composed of crystalline TiCN along with amorphous Si{sub 3}N{sub 4} as a secondary phase. From the XRD results, it was found that the crystallite size of TiCN increased with increasing Si content. The microstructure and mechanical properties of the TiSiCN coatings prepared by this method exhibited strong dependencies on the silicon content. A maximum hardness of 49 GPa and a coefficient of friction of 0.17 were obtained for the film with a silicon content of 3 at.%.

Amorphous silicon prepared from silane-hydrogen mixture

International Nuclear Information System (INIS)

Pietruszko, S.M.

1982-09-01

Amorphous silicon films prepared from a d.c. discharge of 10% SiH 4 - 90% H 2 mixture are found to have properties similar to those made from 100% SiH 4 . These films are found to be quite stable against prolonged light exposure. The effect of nitrogen on the properties of these films was investigated. It was found that instead of behaving as a classical donor, nitrogen introduces deep levels in the material. Field effect experiments on a-Si:H films at the bottom (film-substrate interface) and the top (film-vacuum interface) of the film are also reported. (author)

Evolution of gettering technologies for vacuum tubes to getters for MEMS

Science.gov (United States)

Amiotti, M.

2008-05-01

development of Micro Electro Mechanical Systems (MEMS) with moving parts in a vacuum environment required the development of a new generation of getter film, few microns thick, that can be selectively patterned onto a silicon or glass wafer (usually 4'' or 8''). This wafer with patterned getter film can be used directly as the cap wafer of a wafer to wafer bonded MEMS structure, assuring long life and reliability to the moving MEMS structure especially in automotive applications where thermal cycles are required for qualification.

Vacuum mechatronics first international workshop

Energy Technology Data Exchange (ETDEWEB)

Belinski, S.E.; Shirazi, M.; Hackwood, S.; Beni, G. (eds.) (California Univ., Santa Barbara, CA (USA))

1989-01-01

This report contains papers on the following topics: proposed epitaxial thin film growth in the ultra-vacuum of space; particle monitoring and control in vacuum processing equipment; electrostatic dust collector for use in vacuum systems; materials evaluation of an electrically noisy vacuum slip ring assembly; an overview of lubrication and associated materials for vacuum service; the usage of lubricants in a vacuum environment; guidelines and practical applications for lubrication in vacuum; recent development in leak detector and calibrator designs; the durability of ballscrews for ultrahigh vacuum; vacuum-compatible robot for self-contained manufacturing systems; the design, fabrication, and assembly of an advanced vacuum robotics system for space payload calibration; design criteria for mechanisms used in space; and concepts and requirements for semiconductor multiprocess integration in vacuum. These papers are indexed separately elsewhere.

Effect of ultraviolet illumination and ambient gases on the photoluminescence and electrical properties of nanoporous silicon layer for organic vapor sensor.

Science.gov (United States)

Atiwongsangthong, Narin

2012-08-01

The purpose of this research, the nanoporous silicon layer were fabricated and investigated the physical properties such as photoluminescence and the electrical properties in order to develop organic vapor sensor by using nanoporous silicon. The Changes in the photoluminescence intensity of nanoporous silicon samples are studied during ultraviolet illumination in various ambient gases such as nitrogen, oxigen and vacuum. In this paper, the nanoporous silicon layer was used as organic vapor adsorption and sensing element. The advantage of this device are simple process compatible in silicon technology and usable in room temperature. The structure of this device consists of nanoporous silicon layer which is formed by anodization of silicon wafer in hydrofluoric acid solution and aluminum electrode which deposited on the top of nanoporous silicon layer by evaporator. The nanoporous silicon sensors were placed in a gas chamber with various organic vapor such as ethanol, methanol and isopropyl alcohol. From studying on electrical characteristics of this device, it is found that the nanoporous silicon layer can detect the different organic vapor. Therefore, the nanoporous silicon is important material for organic vapor sensor and it can develop to other applications about gas sensors in the future.

Close up of the pick and place tool carrying a dummy silicon sensor.

CERN Multimedia

Bernd Surrow

1999-01-01

The gantry positioning head contains a vacuum pick-up system thatallows several different pick-up tools to be used. This one isdesigned to pick up the silicon sensors. The pick-up tool containsa pressure sensitive contact which can stop the motion of the machine when the tool touches a fixed object. The shiny cylinderis the end of the microscope optics of the CCD camera.

Comparative measurements of proton dechanneling in silicon under channeling, blocking and double alignment conditions

International Nuclear Information System (INIS)

Kerkow, H.; Pietsch, H.; Taeubner, F.

1980-01-01

Backscattering yields of 300 keV protons are measured under channeling (sub(ch)), blocking (sub(bl)) and double alignment (sub(da)) conditions on (111)-silicon crystals. It was established that the relation sub(ch)-sub(bl)sub(da) is fulfilled within an experimental error of 10% for clean surfaces as well as for vacuum deposited layers on the crystal surface. (author)

Deposition of dielectric films on silicon using a fore-vacuum plasma electron source

Energy Technology Data Exchange (ETDEWEB)

Zolotukhin, D. B.; Tyunkov, A. V.; Yushkov, Yu. G., E-mail: yuyushkov@gmail.com [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Oks, E. M. [Tomsk State University of Control Systems and Radioelectronics, 40 Lenin Ave., Tomsk 634050 (Russian Federation); Institute of High Current Electronics SB RAS, 2/3, Akademichesky Ave., Tomsk 634055 (Russian Federation)

2016-06-15

We describe an experiment on the use of a fore-vacuum-pressure, plasma-cathode, electron beam source with current up to 100 mA and beam energy up to 15 keV for deposition of Mg and Al oxide films on Si substrates in an oxygen atmosphere at a pressure of 10 Pa. The metals (Al and Mg) were evaporated and ionized using the electron beam with the formation of a gas-metal beam-plasma. The plasma was deposited on the surface of Si substrates. The elemental composition of the deposited films was analyzed.

Low-temperature wafer direct bonding of silicon and quartz glass by a two-step wet chemical surface cleaning

Science.gov (United States)

Wang, Chenxi; Xu, Jikai; Zeng, Xiaorun; Tian, Yanhong; Wang, Chunqing; Suga, Tadatomo

2018-02-01

We demonstrate a facile bonding process for combining silicon and quartz glass wafers by a two-step wet chemical surface cleaning. After a post-annealing at 200 °C, strong bonding interfaces with no defects or microcracks were obtained. On the basis of the detailed surface and bonding interface characterizations, the bonding mechanism was explored and discussed. The amino groups terminated on the cleaned surfaces might contribute to the bonding strength enhancement during the annealing. This cost-effective bonding process has great potentials for silicon- and glass-based heterogeneous integrations without requiring a vacuum system.

Magnetically induced vacuum decay

International Nuclear Information System (INIS)

Xue Shesheng

2003-01-01

We study the fermionic vacuum energy of vacua with and without application of an external magnetic field. The energetic difference of two vacua leads to the vacuum decaying and the vacuum energy being released. In the context of quantum field theories, we discuss why and how the vacuum energy can be released by spontaneous photon emission and/or paramagnetically screening the external magnetic field. In addition, we quantitatively compute the vacuum energy released, the paramagnetic screening effect, and the rate and spectrum of spontaneous photon emission. The possibilities of experimentally detecting such an effect of vacuum-energy release and that this effect accounts for the anomalous x-ray pulsar are discussed

Electrical conductivity of free-standing mesoporous silicon thin films

International Nuclear Information System (INIS)

Khardani, M.; Bouaicha, M.; Dimassi, W.; Zribi, M.; Aouida, S.; Bessais, B.

2006-01-01

The effective electrical conductivity of free-standing p + -type porous silicon layers having porosities ranging from 30% to 80% was studied at both experimental and theoretical sides. An Effective Medium Approximation (EMA) model was used as a theoretical support. The porous silicon (PS) films were prepared by the electrochemical etching method for different values of the anodic current density. In order to model the PS electrical conductivity, the free-standing porous layer was assumed to be formed of three phases; vacuum, oxide and Si nanocrystallites. The analytical expression of the electrical conductivity of the Si nanocrystallites was established using the quantum confinement theory. This enables us to correlate the electrical conductivity of the mesoporous film to the value of the effective band gap energy estimated from the absorption coefficient. A perfect agreement between the theoretical and the experimental electrical conductivity values was obtained for all prospected PS porosities

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

Science.gov (United States)

Landis, Geoffrey A.; Loferski, Joseph J.; Beaulieu, Roland; Sekula-Moise, Patricia A.; Vernon, Stanley M.

1990-01-01

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

The silicon vertex detector of the Belle II experiment

Energy Technology Data Exchange (ETDEWEB)

Adamczyk, K. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Aihara, H. [Department of Physics, University of Tokyo, Tokyo 113-0033 (Japan); Angelini, C. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Aziz, T.; Babu, V. [Tata Institute of Fundamental Research, Mumbai 400005 (India); Bacher, S. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); Bahinipati, S. [Indian Institute of Technology Bhubaneswar, Satya Nagar (India); Barberio, E.; Baroncelli, T. [School of Physics, University of Melbourne, Melbourne, Victoria 3010 (Australia); Basith, A.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Batignani, G. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bauer, A. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Behera, P.K. [Indian Institute of Technology Madras, Chennai 600036 (India); Bergauer, T. [Institute of High Energy Physics, Austrian Academy of Sciences, 1050 Vienna (Austria); Bettarini, S. [Dipartimento di Fisica, Universitá di Pisa, I-56127 Pisa (Italy); INFN Sezione di Pisa, I-56127 Pisa (Italy); Bhuyan, B. [Indian Institute of Technology Guwahati, Assam 781039 (India); Bilka, T. [Faculty of Mathematics and Physics, Charles University, 121 16 Prague (Czech Republic); Bosi, F. [INFN Sezione di Pisa, I-56127 Pisa (Italy); Bosisio, L. [Dipartimento di Fisica, Universitá di Trieste, I-34127 Trieste (Italy); INFN Sezione di Trieste, I-34127 Trieste (Italy); Bozek, A. [H. Niewodniczanski Institute of Nuclear Physics, Krakow 31-342 (Poland); and others

2016-07-11

The silicon vertex detector of the Belle II experiment, structured in a lantern shape, consists of four layers of ladders, fabricated from two to five silicon sensors. The APV25 readout ASIC chips are mounted on one side of the ladder to minimize the signal path for reducing the capacitive noise; signals from the sensor backside are transmitted to the chip by bent flexible fan-out circuits. The ladder is assembled using several dedicated jigs. Sensor motion on the jig is minimized by vacuum chucking. The gluing procedure provides such a rigid foundation that later leads to the desired wire bonding performance. The full ladder with electrically functional sensors is consistently completed with a fully developed assembly procedure, and its sensor offsets from the design values are found to be less than 200 μm. The potential functionality of the ladder is also demonstrated by the radioactive source test.

Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

International Nuclear Information System (INIS)

Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

2016-01-01

Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

R&D ERL: Vacuum

Energy Technology Data Exchange (ETDEWEB)

Mapes, M.; Smart, L.; Weiss, D.; Steszyn, A.; Todd, R.

2010-01-01

The ERL Vacuum systems are depicted in a figure. ERL has eight vacuum volumes with various sets of requirements. A summary of vacuum related requirements is provided in a table. Five of the eight volumes comprise the electron beamline. They are the 5-cell Superconducting RF Cavity, Superconducting e-gun, injection, loop and beam dump. Two vacuum regions are the individual cryostats insulating the 5-cell Superconducting RF Cavity and the Superconducting e-gun structures. The last ERL vacuum volume not shown in the schematic is the laser transport line. The beamline vacuum regions are separated by electropneumatic gate valves. The beam dump is common with loop beamline but is considered a separate volume due to geometry and requirements. Vacuum in the 5-cell SRF cavity is maintained in the {approx}10{sup -9} torr range at room temperature by two 20 l/s ion pumps and in the e-gun SRF cavity by one 60 l/s ion pump. Vacuum in the SRF cavities operated at 2{sup o}K is reduced to low 10{sup -11} torr via cryopumping of the cavity walls. The cathode of the e-gun must be protected from poisoning, which can occur if vacuum adjacent to the e-gun in the injection line exceeds 10-11 torr range in the injection warm beamline near the e-gun exit. The vacuum requirements for beam operation in the loop and beam dump are 10-9 torr range. The beamlines are evacuated from atmospheric pressure to high vacuum level with a particulate free, oil free turbomolecular pumping cart. 25 l/s shielded ion pumps distributed throughout the beamlines maintain the vacuum requirement. Due to the more demanding vacuum requirement of the injection beamline proximate to the e-gun, a vacuum bakeout of the injection beamline is required. In addition, two 200 l/s diode ion pumps and supplemental pumping provided by titanium sublimation pumps are installed in the injection line just beyond the exit of the e-gun. Due to expected gas load a similar pumping arrangement is planned for the beam dump. The

Electroweak vacuum instability and renormalized Higgs field vacuum fluctuations in the inflationary universe

Energy Technology Data Exchange (ETDEWEB)

Kohri, Kazunori [Institute of Particle and Nuclear Studies, KEK, 1-1 Oho, Tsukuba 305-0801 (Japan); Matsui, Hiroki, E-mail: kohri@post.kek.jp, E-mail: matshiro@post.kek.jp [The Graduate University for Advanced Studies (SOKENDAI), 1-1 Oho, Tsukuba 305-0801 (Japan)

2017-08-01

In this work, we investigated the electroweak vacuum instability during or after inflation. In the inflationary Universe, i.e., de Sitter space, the vacuum field fluctuations < δ φ {sup 2} > enlarge in proportion to the Hubble scale H {sup 2}. Therefore, the large inflationary vacuum fluctuations of the Higgs field < δ φ {sup 2} > are potentially catastrophic to trigger the vacuum transition to the negative-energy Planck-scale vacuum state and cause an immediate collapse of the Universe. However, the vacuum field fluctuations < δ φ {sup 2} >, i.e., the vacuum expectation values have an ultraviolet divergence, and therefore a renormalization is necessary to estimate the physical effects of the vacuum transition. Thus, in this paper, we revisit the electroweak vacuum instability from the perspective of quantum field theory (QFT) in curved space-time, and discuss the dynamical behavior of the homogeneous Higgs field φ determined by the effective potential V {sub eff}( φ ) in curved space-time and the renormalized vacuum fluctuations < δ φ {sup 2} >{sub ren} via adiabatic regularization and point-splitting regularization. We simply suppose that the Higgs field only couples the gravity via the non-minimal Higgs-gravity coupling ξ(μ). In this scenario, the electroweak vacuum stability is inevitably threatened by the dynamical behavior of the homogeneous Higgs field φ, or the formations of AdS domains or bubbles unless the Hubble scale is small enough H < Λ {sub I} .

Vacuum system for ISABELLE

International Nuclear Information System (INIS)

Hobson, J.P.

1975-01-01

An analysis is presented of the proposed vacuum system for the planned ISABELLE storage rings with respect to acceptability and practicality from the vacuum viewport. A comparison is made between the proposed vacuum system and the vacuum system at the CERN ISR, and some comments on various design and operational parameters are made

Vacuum extraction

DEFF Research Database (Denmark)

Maagaard, Mathilde; Oestergaard, Jeanett; Johansen, Marianne

2012-01-01

Objectives. To develop and validate an Objective Structured Assessment of Technical Skills (OSATS) scale for vacuum extraction. Design. Two-part study design: Primarily, development of a procedure-specific checklist for vacuum extraction. Hereafter, validation of the developed OSATS scale for vac...

Build-up of the silicon micro-strip detector array in ETF of HIRFL-CSR

International Nuclear Information System (INIS)

Wang Pengfei; Li Zhankui; Li Haixia

2014-01-01

Silicon micro-strip detectors have been widely used in the world-famous nuclear physics laboratories due to their better position resolution and energy resolution. Double-sided silicon micro-strip detectors with a position resolution of 0.5 mm × 0.5 mm, have been fabricated in the IMP (Institute of Modern Physics, CAS) by using microelectronics technology. These detectors have been used in the ETF (External Target Facility) of HIRFL-CSR, as ΔE detectors of the ΔE-E telescope system and the track detectors. With the help of flexibility printed circuit board (FPCB) and the integrated ASIC chips, a compact multi-channel front-end electronic board has been designed to fulfill the acquisition of the energy and position information of the Silicon micro-strip detectors. It is described in this paper that the build-up of the Silicon micro-strip detector array in ETF of HIRFL-CSR, the determination of the energy resolution of the detector units, and the energy resolution of approximately 1% obtained for 5∼9 MeV α particles in vacuum. (authors)

Lanthanum additions and the toughness of ultra-high strength steels and the determination of appropriate lanthanum additions

International Nuclear Information System (INIS)

Garrison, Warren M.; Maloney, James L.

2005-01-01

Studies of commercial heats of AF1410 steel suggest that under appropriate conditions additions of rare-earth elements can significantly enhance fracture toughness. This improvement in toughness is not due to an extremely low inclusion volume fraction but is apparently due to the formation of larger and more widely spaced inclusions. The purpose of this work is to discuss our experience in using rare-earth additions to laboratory scale vacuum induction melted and subsequently vacuum arc remelted heats of ultra-high strength steels to achieve inclusion distributions similar to those observed in commercial heats modified with lanthanum additions. The results indicate that lanthanum additions of 0.015 wt.% to low sulfur steels which have been well deoxidized using carbon-vacuum deoxidation can result in lanthanum rich inclusions which are similar in size, volume fraction and spacing to those obtained in commercially produced heats of ultra-high strength steel to which lanthanum has been added. The heat of steel to which lanthanum additions of 0.015 wt.% were made had significantly higher toughness than did the heat of the same steel in which the sulfur had been gettered as small and closely spaced particles of MnS and which had an inclusion volume fraction similar to that of the heat modified by the addition of 0.015 wt.% lanthanum. This improvement in toughness was attributed to an increase in inclusion spacing. An addition of 0.06 wt.% lanthanum was excessive. Such an addition of lanthanum resulted in a huge volume fraction of large cuboidal inclusions which primarily contain lanthanum and oxygen and which are extremely detrimental to toughness

ANTIMONY INDUCED CRYSTALLIZATION OF AMORPHOUS SILICON

Institute of Scientific and Technical Information of China (English)

Y. Wang; H.Z. Li; C.N. Yu; G.M. Wu; I. Gordon; P. Schattschneider; O. Van Der Biest

2007-01-01

Antimony induced crystallization of PVD (physics vapor deposition) amorphous silicon can be observed on sapphire substrates. Very large crystalline regions up to several tens of micrometers can be formed. The Si diffraction patterns of the area of crystallization can be observed with TEM (transmission electron microscopy). Only a few and much smaller crystals of the order of 1μm were formed when the antimony layer was deposited by MBE(molecular beam epitaxy) compared with a layer formed by thermal evaporation. The use of high vacuum is essential in order to observe any Sb induced crystallization at all. In addition it is necessary to take measures to limit the evaporation of the antimony.

Angular dependence of secondary ion emission from silicon bombarded with inert gas ions

International Nuclear Information System (INIS)

Wittmaack, K.

1984-01-01

The emission of positive and negative, atomic and molecular secondary ions sputtered from silicon has been studied under ultrahigh vacuum conditions. The sample was bombarded with 2-12 keV Ar + and Xe + ions at angles of incidence between 0 0 and 60 0 to the surface normal. The angular dependence of the secondary ion intensity as well as the energy spectra of Si + and Si - were found to differ significantly. The effect is attributed mostly do differences in the rate of neutralization. The stability of molecular ions appears to be independent of the charge state. Supporting evidence is provided for the idea that multiply charged secondary ions are due to Auger de-excitation of sputtered atoms in vacuum. (orig.)

Vacuum-thermal-evaporation: the route for roll-to-roll production of large-area organic electronic circuits

International Nuclear Information System (INIS)

Taylor, D M

2015-01-01

Surprisingly little consideration is apparently being given to vacuum-evaporation as the route for the roll-to-roll (R2R) production of large-area organic electronic circuits. While considerable progress has been made by combining silicon lithographic approaches with solution processing, it is not obvious that these will be compatible with a low-cost, high-speed R2R process. Most efforts at achieving this ambition are directed at conventional solution printing approaches such as inkjet and gravure. This is surprising considering that vacuum-evaporation of organic semiconductors (OSCs) is already used commercially in the production of organic light emitting diode displays. Beginning from a discussion of the materials and geometrical parameters determining transistor performance and drawing on results from numerous publications, this review makes a case for vacuum-evaporation as an enabler of R2R organic circuit production. The potential of the vacuum route is benchmarked against solution approaches and found to be highly competitive. For example, evaporated small molecules tend to have higher mobility than printed OSCs. High resolution metal patterning on plastic films is already a low-cost commercial process for high-volume packaging applications. Similarly, solvent-free flash-evaporation and polymerization of thin films on plastic substrates is also a high-volume commercial process and has been shown capable of producing robust gate dielectrics. Reports of basic logic circuit elements produced in a vacuum R2R environment are reviewed and shown to be superior to all-solution printing approaches. Finally, the main issues that need to be resolved in order to fully develop the vacuum route to R2R circuit production are highlighted. (paper)

Obtaining and electrical characterization of silicone/barium titanate composite for variable capacitor applications; Obtencao e caracterizacao eletrica de composito silicone/titanato de bario para aplicacoes em capacitor variavel

Energy Technology Data Exchange (ETDEWEB)

Vieira, D.A.; Souza, P.S.S.; Souza, C.P., E-mail: debora.vieira@cear.ufpb.br [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Centro de Energias Alternativas e Renovaveis. Departamento de Engenharia Eletrica; Menezes, P.C.F. [Universidade Federal de Campina Grande (UFCG), Campina Grande, PB (Brazil). Departamento de Engenharia de Materiais

2014-07-01

Silicone/barium titanate composites are excellent candidates for applications in the production of electronics components. In this work, silicone/barium titanate composite was obtained for the production of capacitors with variable dielectric distance. The mixture of composite (20% of barium titanate) was performed in a mixer with stem type propellers, at room temperature for 20 minutes. The cure was held in vacuum kiln. After obtaining the composite, was mounted a parallel plate capacitor, using composite as dielectric. The composite obtained was subjected to x-ray diffraction, scanning electron microscopy and capacitive electrical test. The DRX confirms the presence of ceramic charge in composite with the presence of broad peaks of barium titanate and micrographs show the barium titanate particles dispersed in polymer matrix. The capacitance of the sample was approximately 28,7pF. (author)

Evolution of gettering technologies for vacuum tubes to getters for MEMS

Energy Technology Data Exchange (ETDEWEB)

Amiotti, M [SAES Getters S.p.A., Viale Italia 77, 20020 Lainate, Milano (Italy)], E-mail: Marco_Amiotti@saes-group.com

2008-05-01

getter surface. The development of Micro Electro Mechanical Systems (MEMS) with moving parts in a vacuum environment required the development of a new generation of getter film, few microns thick, that can be selectively patterned onto a silicon or glass wafer (usually 4-prime or 8-prime). This wafer with patterned getter film can be used directly as the cap wafer of a wafer to wafer bonded MEMS structure, assuring long life and reliability to the moving MEMS structure especially in automotive applications where thermal cycles are required for qualification.

Cosmic vacuum

International Nuclear Information System (INIS)

Chernin, Artur D

2001-01-01

Recent observational studies of distant supernovae have suggested the existence of cosmic vacuum whose energy density exceeds the total density of all the other energy components in the Universe. The vacuum produces the field of antigravity that causes the cosmological expansion to accelerate. It is this accelerated expansion that has been discovered in the observations. The discovery of cosmic vacuum radically changes our current understanding of the present state of the Universe. It also poses new challenges to both cosmology and fundamental physics. Why is the density of vacuum what it is? Why do the densities of the cosmic energy components differ in exact value but agree in order of magnitude? On the other hand, the discovery made at large cosmological distances of hundreds and thousands Mpc provides new insights into the dynamics of the nearby Universe, the motions of galaxies in the local volume of 10 - 20 Mpc where the cosmological expansion was originally discovered. (reviews of topical problems)

Cosmic vacuum

Energy Technology Data Exchange (ETDEWEB)

Chernin, Artur D [P.K. Shternberg State Astronomical Institute at the M.V. Lomonosov Moscow State University, Moscow (Russian Federation)

2001-11-30

Recent observational studies of distant supernovae have suggested the existence of cosmic vacuum whose energy density exceeds the total density of all the other energy components in the Universe. The vacuum produces the field of antigravity that causes the cosmological expansion to accelerate. It is this accelerated expansion that has been discovered in the observations. The discovery of cosmic vacuum radically changes our current understanding of the present state of the Universe. It also poses new challenges to both cosmology and fundamental physics. Why is the density of vacuum what it is? Why do the densities of the cosmic energy components differ in exact value but agree in order of magnitude? On the other hand, the discovery made at large cosmological distances of hundreds and thousands Mpc provides new insights into the dynamics of the nearby Universe, the motions of galaxies in the local volume of 10 - 20 Mpc where the cosmological expansion was originally discovered. (reviews of topical problems)

An ion-sputtering gun to clean crystal surfaces in-situ in an ultra-high-vacuum electron microscope

International Nuclear Information System (INIS)

Morita, Etsuo; Takayanagi, Kunio; Kobayashi, Kunio; Yagi, Katsumichi; Honjo, Goro

1980-01-01

The design and performance of an ion-sputtering gun for cleaning crystal surfaces in-situ in an ultra-high-vacuum electron microscope are reported. The electron microscopic aspects of ion-bombardment damage to ionic magnesium oxide, covalent germanium and silicon, and metallic gold and copper crystals, and the effects of annealing after and during sputtering are described. The growth of various kinds of films deposited in-situ on crystals cleaned by ion-sputtering are described and discussed. (author)

Vacuum level effects on gait characteristics for unilateral transtibial amputees with elevated vacuum suspension.

Science.gov (United States)

Xu, Hang; Greenland, Kasey; Bloswick, Donald; Zhao, Jie; Merryweather, Andrew

2017-03-01

The elevated vacuum suspension system has demonstrated unique health benefits for amputees, but the effect of vacuum pressure values on gait characteristics is still unclear. The purpose of this study was to investigate the effects of elevated vacuum levels on temporal parameters, kinematics and kinetics for unilateral transtibial amputees. Three-dimensional gait analysis was conducted in 9 unilateral transtibial amputees walking at a controlled speed with five vacuum levels ranging from 0 to 20inHg, and also in 9 able-bodied subjects walking at self-preferred speed. Repeated ANOVA and Dunnett's t-test were performed to determine the effect of vacuum level and limb for within subject and between groups. The effect of vacuum level significantly affected peak hip external rotation and external knee adduction moment. Maximum braking and propulsive ground reaction forces generally increased for the residual limb and decreased for the intact limb with increasing vacuum. Additionally, the intact limb experienced an increased loading due to gait asymmetry for several variables. There was no systematic vacuum level effect on gait. Higher vacuum levels, such as 15 and 20inHg, were more comfortable and provided some relief to the intact limb, but may also increase the risk of osteoarthritis of the residual limb due to the increased peak external hip and knee adduction moments. Very low vacuum should be avoided because of the negative effects on gait symmetry. A moderate vacuum level at 15inHg is suggested for unilateral transtibial amputees with elevated vacuum suspension. Copyright © 2017 Elsevier Ltd. All rights reserved.

Introduction to vacuum technology: supplementary study material developed for IVS sponsored vacuum courses

International Nuclear Information System (INIS)

Bhusan, K.G.

2008-01-01

Vacuum technology has advanced to a large extent mainly from the demands of experimental research scientists who have more than ever understood the need for clean very low pressure environments. This need only seems to increase as the lowest pressures achievable in a laboratory setup are dropping down by the decade. What is not usually said is that conventional techniques of producing ultrahigh vacuum have also undergone a metamorphosis in order to cater to the multitude of restrictions in modern day scientific research. This book aims to give that practical approach to vacuum technology. The basics are given in the first chapter with more of a definition oriented approach - which is practically useful. The second chapter deals with the production of vacuum and ultrahigh vacuum with an emphasis on the working principles of several pumps and their working pressure ranges. Measurement of low pressures, both total and partial is presented in the third chapter with a note on leak detection and mass spectrometric techniques. Chapter 4 gives an overview of the materials that are vacuum compatible and their material properties. Chapter 5 gives the necessary methods to be followed for cleaning of vacuum components especially critical if ultrahigh vacuum environment is required. The practical use of a ultrahigh vacuum environment is demonstrated in Chapter 6 for production of high quality thin films through vapour deposition

Vacuum fluctuations in an ancestor vacuum: A possible dark energy candidate

Science.gov (United States)

Aoki, Hajime; Iso, Satoshi; Lee, Da-Shin; Sekino, Yasuhiro; Yeh, Chen-Pin

2018-02-01

We consider an open universe created by bubble nucleation, and study possible effects of our "ancestor vacuum," a de Sitter space in which bubble nucleation occurred, on the present universe. We compute vacuum expectation values of the energy-momentum tensor for a minimally coupled scalar field, carefully taking into account the effect of the ancestor vacuum by the Euclidean prescription. We pay particular attention to the so-called supercurvature mode, a non-normalizable mode on a spatial slice of the open universe, which has been known to exist for sufficiently light fields. This mode decays in time most slowly, and may leave residual effects of the ancestor vacuum, potentially observable in the present universe. We point out that the vacuum energy of the quantum field can be regarded as dark energy if mass of the field is of order the present Hubble parameter or smaller. We obtain preliminary results for the dark energy equation of state w (z ) as a function of the redshift.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

Energy Technology Data Exchange (ETDEWEB)

Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

2011-12-15

Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

International Nuclear Information System (INIS)

Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

2011-01-01

Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Utility of Vaccum Pressed Silicon Sheet as a Bite Raising Appliance in the Management of TMJ Dysfunction Syndrome.

Science.gov (United States)

Datarkar, Abhay; Daware, Surendra; Dande, Ravi

2017-09-01

Temporomandibular disorders (TMDs) represent a group of painful conditions involving the muscles of mastication and the temporomandibular joint (TMJ) that frequently encountered in general clinical practice. This study is designed to assess the utility of vacuum pressed silicon sheet as a bite raising appliance in the management of TMJ dysfunction syndrome. The patients for this study were selected from those with the chief complaint of TMJ disorder. Out of 200 patients, 104 patients were diagnosed with subluxation and 96 patients were diagnosed with internal derangement of temporomandibular joint. All the reported cases were managed conservatively with physiotherapy and muscle relaxant therapy for one week period and followed with silicon bite raising appliance over both the arches in the subsequent period. All the patients had pain relief within six months duration as graded over verbal analog scale. ANOVA scale was used for comparision of VAS scores. The use of vacuum pressed bite raising appliance in the management of TMJ disorder was found to be satisfactorily effective in alleviation of pain symptom in our study group.

Quality factor improvement of silicon nitride micro string resonators

DEFF Research Database (Denmark)

Schmid, Silvan; Malm, Bjarke; Boisen, Anja

2011-01-01

Resonant micro and nano strings are of interest for sensor applications due to their extraordinary high quality factors, low mass and tunable resonant frequency. It has been found that the quality factor of strings is usually limited by clamping loss. In this work, clamping loss has been addressed...... by varying the clamping design and string geometry. We present silicon nitride micro strings with quality factors (Q) of up to 4 million in high vacuum achieved by minimizing clamping loss. For applications such as for chemical sensing, strings need to vibrate at atmospheric pressure. Maximal quality factor...

Influence of the sputtering system's vacuum level on the properties of indium tin oxide films

International Nuclear Information System (INIS)

Zebaze Kana, M.G.; Centurioni, E.; Iencinella, D.; Summonte, C.

2006-01-01

The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Corning glass using In 2 O 3 :SnO 2 target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm 2 and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%

Influence of Gap Distance on Vacuum Arc Characteristics of Cup Type AMF Electrode in Vacuum Interrupters

International Nuclear Information System (INIS)

Cheng Shaoyong; Xiu Shixin; Wang Jimei; Shen Zhengchao

2006-01-01

The greenhouse effect of SF 6 is a great concern today. The development of high voltage vacuum circuit breakers becomes more important. The vacuum circuit breaker has minimum pollution to the environment. The vacuum interrupter is the key part of a vacuum circuit breaker. The interrupting characteristics in vacuum and arc-controlling technique are the main problems to be solved for a longer gap distance in developing high voltage vacuum interrupters. To understand the vacuum arc characteristics and provide effective technique to control vacuum arc in a long gap distance, the arc mode transition of a cup-type axial magnetic field electrode is observed by a high-speed charge coupled device (CCD) video camera under different gap distances while the arc voltage and arc current are recorded. The controlling ability of the axial magnetic field on vacuum arc obviously decreases when the gap distance is longer than 40 mm. The noise components and mean value of the arc voltage significantly increase. The effective method for controlling the vacuum arc characteristics is provided by long gap distances based on the test results. The test results can be used as a reference to develop high voltage and large capacity vacuum interrupters

Vacuum-assisted delivery

Science.gov (United States)

... medlineplus.gov/ency/patientinstructions/000514.htm Vacuum-assisted delivery To use the sharing features on this page, ... through the birth canal. When is Vacuum-assisted Delivery Needed? Even after your cervix is fully dilated ( ...

R and D ERL: Vacuum

International Nuclear Information System (INIS)

Mapes, M.; Smart, L.; Weiss, D.; Steszyn, A.; Todd, R.

2010-01-01

The ERL Vacuum systems are depicted in a figure. ERL has eight vacuum volumes with various sets of requirements. A summary of vacuum related requirements is provided in a table. Five of the eight volumes comprise the electron beamline. They are the 5-cell Superconducting RF Cavity, Superconducting e-gun, injection, loop and beam dump. Two vacuum regions are the individual cryostats insulating the 5-cell Superconducting RF Cavity and the Superconducting e-gun structures. The last ERL vacuum volume not shown in the schematic is the laser transport line. The beamline vacuum regions are separated by electropneumatic gate valves. The beam dump is common with loop beamline but is considered a separate volume due to geometry and requirements. Vacuum in the 5-cell SRF cavity is maintained in the ∼10 -9 torr range at room temperature by two 20 l/s ion pumps and in the e-gun SRF cavity by one 60 l/s ion pump. Vacuum in the SRF cavities operated at 2 o K is reduced to low 10 -11 torr via cryopumping of the cavity walls. The cathode of the e-gun must be protected from poisoning, which can occur if vacuum adjacent to the e-gun in the injection line exceeds 10-11 torr range in the injection warm beamline near the e-gun exit. The vacuum requirements for beam operation in the loop and beam dump are 10-9 torr range. The beamlines are evacuated from atmospheric pressure to high vacuum level with a particulate free, oil free turbomolecular pumping cart. 25 l/s shielded ion pumps distributed throughout the beamlines maintain the vacuum requirement. Due to the more demanding vacuum requirement of the injection beamline proximate to the e-gun, a vacuum bakeout of the injection beamline is required. In addition, two 200 l/s diode ion pumps and supplemental pumping provided by titanium sublimation pumps are installed in the injection line just beyond the exit of the e-gun. Due to expected gas load a similar pumping arrangement is planned for the beam dump. The cryostat vacuum thermally

Low energy electron diffraction (LEED) and sum frequency generation (SFG) vibrational spectroscopy studies of solid-vacuum, solid-air and solid-liquid interfaces

Energy Technology Data Exchange (ETDEWEB)

Hoffer, Saskia [Univ. of California, Berkeley, CA (United States)

2002-01-01

Electron based surface probing techniques can provide detailed information about surface structure or chemical composition in vacuum environments. The development of new surface techniques has made possible in situ molecular level studies of solid-gas interfaces and more recently, solid-liquid interfaces. The aim of this dissertation is two-fold. First, by using novel sample preparation, Low Energy Electron Diffraction (LEED) and other traditional ultra high vacuum (UHV) techniques are shown to provide new information on the insulator/vacuum interface. The surface structure of the classic insulator NaCl has been determined using these methods. Second, using sum frequency generation (SFG) surface specific vibrational spectroscopy studies were performed on both the biopolymer/air and electrode/electrolyte interfaces. The surface structure and composition of polyetherurethane-silicone copolymers were determined in air using SFG, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). SFG studies of the electrode (platinum, gold and copper)/electrolyte interface were performed as a function of applied potential in an electrochemical cell.

Conversion electron spectrometry of Pu isotopes with a silicon drift detector

OpenAIRE

Pommé, S.; Paepen, J.; Peräjärvi, K.; Turunen, J.; Pöllänen, R.

2016-01-01

An electron spectrometry set-up was built at IRMM consisting of a vacuum chamber with a moveable source holder and windowless Peltier-cooled silicon drift detector (SDD). The SDD is well suited for measuring low-energy x rays and electrons emitted from thin radioactive sources with low self-absorption. The attainable energy resolution is better than 0.5 keV for electrons of 30 keV. It has been used to measure the conversion electron spectra of three plutonium isotopes, i.e. 238Pu, 239Pu, 240P...

Nitrogen doped silicon-carbon multilayer protective coatings on carbon obtained by TVA method

Science.gov (United States)

Ciupina, Victor; Vasile, Eugeniu; Porosnicu, Corneliu; Lungu, Cristian P.; Vladoiu, Rodica; Jepu, Ionut; Mandes, Aurelia; Dinca, Virginia; Caraiane, Aureliana; Nicolescu, Virginia; Cupsa, Ovidiu; Dinca, Paul; Zaharia, Agripina

2017-08-01

Protective nitrogen doped Si-C multilayer coatings on carbon, used to improve the oxidation resistance of carbon, were obtained by Thermionic Vacuum Arc (TVA) method. The initial carbon layer having a thickness of 100nm has been deposed on a silicon substrate in the absence of nitrogen, and then a 3nm Si thin film to cover carbon layer was deposed. Further, seven Si and C layers were alternatively deposed in the presence of nitrogen ions, each having a thickness of 40nm. In order to form silicon carbide at the interface between silicon and carbon layers, all carbon, silicon and nitrogen ions energy has increased up to 150eV . The characterization of microstructure and electrical properties of as-prepared N-Si-C multilayer structures were done using Transmission Electron Microscopy (TEM, STEM) techniques, Thermal Desorption Spectroscopy (TDS) and electrical measurements. Oxidation protection of carbon is based on the reaction between oxygen and silicon carbide, resulting in SiO2, SiO and CO2, and also by reaction involving N, O and Si, resulting in silicon oxynitride (SiNxOy) with a continuously variable composition, and on the other hand, since nitrogen acts as a trapping barrier for oxygen. To perform electrical measurements, 80% silver filled two-component epoxy-based glue ohmic contacts were attached on the N-Si-C samples. Electrical conductivity was measured in constant current mode. The experimental data show the increase of conductivity with the increase of the nitrogen content. To explain the temperature behavior of electrical conductivity we assumed a thermally activated electric transport mechanism.

Vacuum considerations: summary

International Nuclear Information System (INIS)

Blechschmidt, D.; Halama, H.J.

1978-01-01

A summary is given of the efforts of a vacuum systems study group of the workshop on a Heavy Ion Demonstration Experiment (HIDE) for heavy ion fusion. An inadequate knowledge of cross-sections prevents a more concrete vacuum system design. Experiments leading to trustworthy numbers for charge exchange, stripping and capture cross-sections are badly needed and should start as soon as possible. In linacs, beam loss will be almost directly proportional to the pressure inside the tanks. The tanks should, therefore, be built in such a way that they can be baked-out in situ to improve their vacuum, especially if the cross-sections turn out to be higher than anticipated. Using standard UHV techniques and existing pumps, an even lower pressure can be achieved. The vacuum system design for circular machines will be very difficult, and in some cases, beyond the present state-of-the-art

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Modern vacuum physics

CERN Document Server

Chambers, Austin

2005-01-01

Modern Vacuum Physics presents the principles and practices of vacuum science and technology along with a number of applications in research and industrial production. The first half of the book builds a foundation in gases and vapors under rarefied conditions, The second half presents examples of the analysis of representative systems and describes some of the exciting developments in which vacuum plays an important role. The final chapter addresses practical matters, such as materials, components, and leak detection. Throughout the book, the author''s explanations are presented in terms of first principles and basic physics, augmented by illustrative worked examples and numerous figures.

Gravitation and vacuum field

International Nuclear Information System (INIS)

Tevikyan, R.V.

1986-01-01

This paper presents equations that describe particles with spins s = 0, 1/2, 1 completely and which also describe 2s + 2 limiting fields as E → ∞. It is shown that the ordinary Hilbert-Einstein action for the gravitation field must be augmented by the action for the Bose vacuum field. This means that one must introduce in the gravitational equations a cosmological term proportional to the square of the strength of the Bose vacuum field. It is shown that the theory of gravitation describes three realities: matter, field, and vacuum field. A new form of matter--the vacuum field--is introduced into field theory

Surge-damping vacuum valve

International Nuclear Information System (INIS)

Bullock, J.C.; Kelley, B.E.

1977-01-01

A valve for damping out flow surges in a vacuum system is described. The surge-damping mechanism consists of a slotted, spring-loaded disk adjacent to the valve's vacuum port (the flow passage to the vacuum roughing pump). Under flow surge conditions, the differential pressure forces the disk into a sealing engagement with the vacuum port, thereby restricting the gas flow path to narrow slots in the disk's periphery. The increased flow damps out the flow surge. When pressure is equalized on both sides of the valve, the spring load moves the disk away from the port to restore full flow conductance through the valve

Comparison of vacuum rise time, vacuum limit accuracy, and occlusion break surge of 3 new phacoemulsification systems.

Science.gov (United States)

Han, Young Keun; Miller, Kevin M

2009-08-01

To compare vacuum rise time, vacuum limit accuracy, and occlusion break surge of 3 new phacoemulsification machines. Jules Stein Eye Institute and Department of Ophthalmology, David Geffen School of Medicine at UCLA, Los Angeles, California, USA. The vacuum rise time under normal and enhanced aspiration modes, vacuum limit accuracy, and occlusion break surge of the Infiniti Vision System, Stellaris Vision Enhancement System, and WhiteStar Signature Phacoemulsification System were tested. Vacuum rise time and limit accuracy were measured at limit settings of 400 mm Hg and 600 mm Hg. Surge area was recorded at vacuum limit settings of 200 mm Hg, 300 mm Hg, 400 mm Hg, and 500 mm Hg. The Infiniti had the fastest vacuum rise times under normal and enhanced aspiration modes. At 4 seconds, the vacuum limit accuracy was greatest with the Infiniti at the 400 mm Hg limit and the Signature at the 600 mm Hg limit. The Stellaris did not reach either vacuum target. The Infiniti performed better than the other 2 machines during testing of occlusion break surge at all vacuum limit settings above 200 mm Hg. Under controlled laboratory test conditions, the Infiniti had the fastest vacuum rise time, greatest vacuum limit accuracy at 400 mm Hg, and least occlusion break surge. These results can be explained by the lower compliance of the Infiniti system.

Microstructure refinement and mechanical properties improvement by developing IAF on inclusions in Ti–Al complex deoxidized HSLA steel

International Nuclear Information System (INIS)

Jiang, M.; Wang, X.H.; Hu, Z.Y.; Wang, K.P.; Yang, C.W.; Li, S.R.

2015-01-01

The present study focused on microstructure refinement in Ti–Al complex deoxidized low alloy structural steel by developing IAF on inclusions. The goal was to establish more determined relation between Ti, Al in steel and the produced microstructures. In steel sample with Ti and Al contents of 0.0035% and 0.0004%, respectively, IAF was well developed by inclusions characterized by TiO_x–MnO oxide cores enwrapped by (MnO–SiO_2–Al_2O_3)–MnS or (MnO–SiO_2)–MnS surface layers. With the rise of Ti and Al contents, IAF volume decreased greatly because of different inclusion chemistry, TiO_x + MnS, TiO_x–Al_2O_3 or Al_2O_3, which inhibit the formation of IAF. Thermodynamic calculations were carried out for optimal Ti and Al contents in steel to target inclusions with proper chemistry for nucleating IAF. These laboratorial findings were successfully applied and reproducibly observed in pilot trials. It was indicated that low temperature impact toughness at 0 °C and − 20 °C of the produced medium plate was effectively improved despite lower Ti contents than common process, which was very meaningful in saving the cost of high Ti content steels. - Highlights: • IAF volume showed close relationship to Ti or Al contents. • To target IAF, there is no need to add too many titanium alloys. • Optimal Ti and Al were about 0.0020–0.0060% and 0.0005–0.0020%, respectively. • Impact toughness of steel plate at 0 °C and − 20 °C was successfully improved.

NA62 Gigatracker sets new standards for silicon detectors

CERN Multimedia

CERN Bulletin

2011-01-01

The NA62 experiment should start collecting its first data (technical run) in a little over one year. At the heart of the experiment is the Gigatracker, a newly conceived silicon pixel detector, whose job is to measure the arrival time and the position of the incoming beam particles. The demonstration detector has recently shown a time resolution of 175 picoseconds, an unprecedented record in the field of silicon pixel detectors.   The Gigatracker prototype. A 115 metre long vacuum tank, a brand new set of detectors surrounding it and an extremely rare decay to study: this is the new NA62 detector, foreseen to be installed in the SPS North Area in 2012. “We will study a very rare decay of the K+. Such a decay is sensitive to contributions coming from new particles and therefore represents a powerful way of searching for new physics, complementary to the direct approach of the LHC detectors,” explains Augusto Ceccucci, NA62 spokesperson. The particles from the SPS accelerator a...

Vacuum type D initial data

Science.gov (United States)

García-Parrado Gómez-Lobo, Alfonso

2016-09-01

A vacuum type D initial data set is a vacuum initial data set of the Einstein field equations whose data development contains a region where the space–time is of Petrov type D. In this paper we give a systematic characterisation of a vacuum type D initial data set. By systematic we mean that the only quantities involved are those appearing in the vacuum constraints, namely the first fundamental form (Riemannian metric) and the second fundamental form. Our characterisation is a set of conditions consisting of the vacuum constraints and some additional differential equations for the first and second fundamental forms These conditions can be regarded as a system of partial differential equations on a Riemannian manifold and the solutions of the system contain all possible regular vacuum type D initial data sets. As an application we particularise our conditions for the case of vacuum data whose data development is a subset of the Kerr solution. This has applications in the formulation of the nonlinear stability problem of the Kerr black hole.

Vacuum pumping concepts for ETF

International Nuclear Information System (INIS)

Homeyer, W.G.

1980-09-01

The Engineering Test Facility (ETF) poses unique vacuum pumping requirements due to its large size and long burn characteristics. These requirements include torus vacuum pumping initially and between burns and pumping of neutralized gas from divertor collector chambers. It was found that the requirements could be met by compound cryopumps in which molecular sieve 5A is used as the cryosorbent. The pumps, ducts, and vacuum valves required are large but fit with other ETF components and do not require major advances in vacuum pumping technology. Several additional design, analytical, and experimental studies were identified as needed to optimize designs and provide better design definition for the ETF vacuum pumping systems

Structure of Nonlocal quark vacuum condensate in non-perturbative QCD vacuum

International Nuclear Information System (INIS)

Xiang Qianfei; Ma Weixing; Zhou Lijuan; Jiang Weizhou

2014-01-01

Based on the Dyson-Schwinger Equations (DSEs) with the rainbow truncation, and Operator Product Expansion, the structure of nonlocal quark vacuum condensate in QCD, described by quark self-energy functions A_f and B_f given usually by the solutions of the DSEs of quark propagator, is predicted numerically. We also calculate the local quark vacuum condensate, quark-gluon mixed local vacuum condensate, and quark virtuality. The self-energy functions A_f and B_f are given by the parameterized quark propagator functions σ_v"f (p"2) and σ_s"f (p"2) of Roberts and Williams, instead of the numerical solutions of the DSEs. Our calculated results are in reasonable agreement with those of QCD sum rules, Lattice QCD calculations, and instanton model predictions, although the resulting local quark vacuum condensate for light quarks, u, d, s, are a little bit larger than those of the above theoretical predictions. We think the differences are caused by model dependence. The larger of strange quark vacuum condensate than u, d quark is due to the s quark mass which is more larger than u, d quark masses. Of course, the Roberts-Williams parameterized quark propagator is an empirical formulism, which approximately describes quark propagation. (authors)

Shiva and Argus target diagnostics vacuum systems

International Nuclear Information System (INIS)

Glaros, S.S.; Mayo, S.E.; Campbell, D.; Holeman, D.

1978-09-01

The normal operation of LLL's Argus and Shiva laser irradiation facilities demand a main vacuum system for the target chamber and a separate local vacuum system for each of the larger appendage dianostics. This paper will describe the Argus and Shiva main vacuum systems, their respective auxiliary vacuum systems and the individual diagnostics with their respective special vacuum requirements and subsequent vacuum systems. Our latest approach to automatic computer-controlled vacuum systems will be presented

CERN Vacuum-System Activities during the Long Shutdown 1: The LHC Beam Vacuum

CERN Document Server

Baglin, V; Chiggiato, P; Jimenez, JM; Lanza, G

2014-01-01

After the Long Shutdown 1 (LS1) and the consolidation of the magnet bus bars, the CERN Large Hadron Collider (LHC) will operate with nominal beam parameters. Larger beam energy, beam intensities and luminosity are expected. Despite the very good performance of the beam vacuum system during the 2010-12 physics run (Run 1), some particular areas require attention for repair, consolidation and upgrade. Among the main activities, a large campaign aiming at the repair of the RF bridges of some vacuum modules is conducted. Moreover, consolidation of the cryogenic beam vacuum systems with burst disk for safety reasons is implemented. In addition, NEG cartridges, NEG coated inserts and new instruments for the vacuum system upgrade are installed. Besides these activities, repair, consolidation and upgrades of other beam equipment such as collimators, kickers and beam instrumentations are carried out. In this paper, the motivation and the description for such activities, together with the expected beam vacuum performa...

A low cost and hybrid technology for integrating silicon sensors or actuators in polymer microfluidic systems

International Nuclear Information System (INIS)

Charlot, Samuel; Gué, Anne-Marie; Tasselli, Josiane; Marty, Antoine; Abgrall, Patrick; Estève, Daniel

2008-01-01

This paper describes a new technology permitting a hybrid integration of silicon chips in polymer (PDMS and SU8) microfluidic structures. This two-step technology starts with transferring the silicon device onto a rigid substrate (typically PCB) and planarizing it, and then it proceeds with stacking of the polymer-made fluidic network onto the device. The technology is low cost, based on screen printing and lamination, can be applied to treat large surface areas, and is compatible with standard photolithography and vacuum based approaches. We show, as an example, the integration of a thermal sensor inside channels made of PDMS or SU8. The developed structures had no fluid leaks at the Si/polymer interfaces and the electrical circuit was perfectly tightproof. (note)

The AGS Booster vacuum systems

International Nuclear Information System (INIS)

Hseuh, H.C.

1989-01-01

The AGS Booster is a synchrotron for the acceleration of both protons and heavy ions. The design pressure of low 10 -11 mbar is required to minimize beam loss of the partially stripped heavy ions. To remove contaminants and to reduce outgassing, the vacuum chambers and the components located in them will be chemically cleaned, vacuum fired, baked then treated with nitric oxide. The vacuum sector will be insitu baked to a minimum of 200 degree C and pumped by the combination of sputter ion pumps and titanium sublimation pumps. This paper describes the design and the processing of this ultra high vacuum system, and the performance of some half-cell vacuum chambers. 9 refs., 7 figs

A silicon nanomembrane detector for matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (MALDI-TOF MS) of large proteins.

Science.gov (United States)

Park, Jonghoo; Blick, Robert H

2013-10-11

We describe a MALDI-TOF ion detector based on freestanding silicon nanomembrane technology. The detector is tested in a commercial MALDI-TOF mass spectrometer with equimolar mixtures of proteins. The operating principle of the nanomembrane detector is based on phonon-assisted field emission from these silicon nanomembranes, in which impinging ion packets excite electrons in the nanomembrane to higher energy states. Thereby the electrons can overcome the vacuum barrier and escape from the surface of the nanomembrane via field emission. Ion detection is demonstrated of apomyoglobin (16,952 Da), aldolase (39,212 Da), bovine serum albumin (66,430 Da), and their equimolar mixtures. In addition to the three intact ions, a large number of fragment ions are also revealed by the silicon nanomembrane detector, which are not observable with conventional detectors.

A Silicon Nanomembrane Detector for Matrix-Assisted Laser Desorption/Ionization Time-of-Flight Mass Spectrometry (MALDI-TOF MS of Large Proteins

Directory of Open Access Journals (Sweden)

Jonghoo Park

2013-10-01

Full Text Available We describe a MALDI-TOF ion detector based on freestanding silicon nanomembrane technology. The detector is tested in a commercial MALDI-TOF mass spectrometer with equimolar mixtures of proteins. The operating principle of the nanomembrane detector is based on phonon-assisted field emission from these silicon nanomembranes, in which impinging ion packets excite electrons in the nanomembrane to higher energy states. Thereby the electrons can overcome the vacuum barrier and escape from the surface of the nanomembrane via field emission. Ion detection is demonstrated of apomyoglobin (16,952 Da, aldolase (39,212 Da, bovine serum albumin (66,430 Da, and their equimolar mixtures. In addition to the three intact ions, a large number of fragment ions are also revealed by the silicon nanomembrane detector, which are not observable with conventional detectors.

Radiative heat transfer exceeding the blackbody limit between macroscale planar surfaces separated by a nanosize vacuum gap

Science.gov (United States)

Bernardi, Michael P.; Milovich, Daniel; Francoeur, Mathieu

2016-09-01

Using Rytov's fluctuational electrodynamics framework, Polder and Van Hove predicted that radiative heat transfer between planar surfaces separated by a vacuum gap smaller than the thermal wavelength exceeds the blackbody limit due to tunnelling of evanescent modes. This finding has led to the conceptualization of systems capitalizing on evanescent modes such as thermophotovoltaic converters and thermal rectifiers. Their development is, however, limited by the lack of devices enabling radiative transfer between macroscale planar surfaces separated by a nanosize vacuum gap. Here we measure radiative heat transfer for large temperature differences (~120 K) using a custom-fabricated device in which the gap separating two 5 × 5 mm2 intrinsic silicon planar surfaces is modulated from 3,500 to 150 nm. A substantial enhancement over the blackbody limit by a factor of 8.4 is reported for a 150-nm-thick gap. Our device paves the way for the establishment of novel evanescent wave-based systems.

The symmetries of the vacuum

International Nuclear Information System (INIS)

Fleming, H.

1985-01-01

The vacuum equation of state required by cosmological inflation is taken seriously as a general property of the cosmological vacuum. This correctly restricts the class of theories which admit inflation. A model of such a vacuum is presented that leads naturally to the cosmological principle. (Author) [pt

Realisation of a ultra-high vacuum system and technique development of microscopical emitters preparation in silicium. First measurements of field emission current and field photoemission

International Nuclear Information System (INIS)

El Manouni, A.

1990-12-01

The development of research in the domain of photocathode (electron sources) illuminated by laser light to produce intense multiple bunches of electrons in short time is needed by many applications as linear collider e + e - , free electron laser, lasertron, etc... In this way, after a study of field emission, of photoemission and of photofield emission, we prepared microscopical emitters in silicium heavy and weakly doped a boron using a technique of microlithography. Then, we realized a system of ultra-high vacuum of studying property of emission from photocathodes realized. The experiment results obtained in field emission and photofield emission have shown that a behaviour unexpected for P-silicium tips array compared to P + -silicon tips array. With P-type silicon, a quantum yield of 21 percent has been measured for laser power of 140 mW and for applied field of 1.125 x 10 7 V/m and an instantaneous response to laser light beam has been observed. It has been noted that presence of oxyde at the surface of photocathode limits extensively the emission current. The fluctuations of emission current are due to quality of vacuum [fr

Regulating vacuum pump speed with feedback control

International Nuclear Information System (INIS)

Ludington, D.C.; Aneshansley, D.J.; Pellerin, R.; Guo, F.

1992-01-01

Considerable energy is wasted by the vacuum pump/motor on dairy farms. The output capacity (m 3 /min or cfm) of the vacuum pump always exceeds the capacity needed to milk cows and wash pipelines. Vacuum pumps run at full speed and load regardless of actual need for air. Excess air is admitted through a controller. Energy can be saved from electrical demand reduced by regulating vacuum pump speed according to air based on air usage. An adjustable speed drive (ASD) on the motor and controlled based upon air usage, can reduce the energy used by the vacuum pump. However, the ASD unit tested could not maintain vacuum levels within generally accepted guidelines when air usage changed. Adding a high vacuum reserve and a dual vacuum controller between the vacuum pump and the milking pipeline brought vacuum stability within guidelines. The ASD/dual vacuum system can reduce energy consumption and demand by at least 50 percent during milking and provide better vacuum stability than conventional systems. Tests were not run during washing cycles. Using 1990 costs and only the energy saved during milking, the simple payback on investment in new equipment for a 5 hp motor, speed controller and vacuum regulator would be about 5 years

The Source of the Quantum Vacuum

Directory of Open Access Journals (Sweden)

Daywitt W. C.

2009-01-01

Full Text Available The quantum vacuum consists of virtual particles randomly appearing and disappearing in free space. Ordinarily the wavenumber (or frequency spectrum of the zero-point fields for these virtual particles is assumed to be unbounded. The unbounded nature of the spectrum leads in turn to an infinite energy density for the quantum vacuum and an infinite renormalization mass for the free particle. This paper argues that there is a more fundamental vacuum state, the Planck vacuum, from which the quantum vacuum emerges and that the “graininess” of this more fundamental vacuum state truncates the wavenumber spectrum and leads to a finite energy density and a finite renormalization mass.

The Source of the Quantum Vacuum

Directory of Open Access Journals (Sweden)

Daywitt W. C.

2009-01-01

Full Text Available The quantum vacuum consists of virtual particles randomly appearing and disappearing in free space. Ordinarily the wavenumber (or frequency spectrum of the zero-point fields for these virtual particles is assumed to be unbounded. The unbounded nature of the spectrum leads in turn to an infinite energy density for the quantum vacuum and an infinite renormalization mass for the free particle. This paper argues that there is a more fundamental vacuum state, the Planck vacuum, from which the quantum vacuum emerges and that the "graininess" of this more fundamental vacuum state truncates the wavenumber spectrum and leads to a finite energy density and a finite renormalization mass.

Scroll vacuum pump

Energy Technology Data Exchange (ETDEWEB)

Morishita, Etsuo; Suganami, Takuya; Nishida, Mitsuhiro; Kitora, Yoshihisa; Yamamoto, Sakuei; Fujii, Kosaburo

1988-02-25

An effort is made to apply a scroll machine to development of a vacuum pump. In view of mechanical simplification and load patterns, the vacuum pump uses a rotating mechanism to produce paired vortices rotating around each center. Chip seal and atmospheric pressure are utilized for axial gap sealing while a spring and atmospheric pressure for the radial gap sealing. In both gaps, the sealing direction is stationary relative to the environment during rotation, making it much easier to achieve effective sealing as compared to oscillating pumps. Since the compression ratio is high in vacuum pumps, a zero top clearance form is adopted for the central portion of vortices and an gas release valve is installed in the rotating axis. A compact Oldham coupling with a small inertia force is installed behind the vortices to maintain the required phase relations between the vortices. These improvements result in a vacuum of 1 Pa for dry operation and 10/sup -2/ Pa for oil flooded operation of a single-stage scroll machine at 1800 rpm. (5 figs, 1 tab, 4 refs)

Cosmology with decaying vacuum energy

International Nuclear Information System (INIS)

Freese, K.; Adams, F.; Frieman, J.; Mottola, E.

1987-09-01

Motivated by recent attempts to solve the cosmological constant problem, we examine the observational consequences of a vacuum energy density which decays in time. For all times later than t ∼ 1 sec, the ratio of the vacuum to the total energy density of the universe must be small. Although the vacuum cannot provide the ''missing mass'' required to close the universe today, its presence earlier in the history of the universe could have important consequences. We discuss restrictions on the vacuum energy arising from primordial nucleosynthesis, the microwave and gamma ray background spectra, and galaxy formation. A small vacuum component at the era of nucleosynthesis, 0.01 5, but in some cases would severely distort the microwave spectrum. 9 refs., 3 figs

Approximated calculation of the vacuum wave function and vacuum energy of the LGT with RPA method

International Nuclear Information System (INIS)

Hui Ping

2004-01-01

The coupled cluster method is improved with the random phase approximation (RPA) to calculate vacuum wave function and vacuum energy of 2 + 1 - D SU(2) lattice gauge theory. In this calculating, the trial wave function composes of single-hollow graphs. The calculated results of vacuum wave functions show very good scaling behaviors at weak coupling region l/g 2 >1.2 from the third order to the sixth order, and the vacuum energy obtained with RPA method is lower than the vacuum energy obtained without RPA method, which means that this method is a more efficient one

Interface bonding in silicon oxide nanocontacts: interaction potentials and force measurements

Science.gov (United States)

Wierez-Kien, M.; Craciun, A. D.; Pinon, A. V.; Le Roux, S.; Gallani, J. L.; Rastei, M. V.

2018-04-01

The interface bonding between two silicon-oxide nanoscale surfaces has been studied as a function of atomic nature and size of contacting asperities. The binding forces obtained using various interaction potentials are compared with experimental force curves measured in vacuum with an atomic force microscope. In the limit of small nanocontacts (typically contact area which is altered by stretching speeds. The mean unbinding force is found to decrease as the contact spends time in the attractive regime. This contact weakening is featured by a negative aging coefficient which broadens and shifts the thermal-induced force distribution at low stretching speeds.

Cold Vacuum Drying (CVD) Facility Vacuum Purge System Chilled Water System Design Description. System 47-4

International Nuclear Information System (INIS)

IRWIN, J.J.

2000-01-01

This system design description (SDD) addresses the Vacuum Purge System Chilled Water (VPSCHW) system. The discussion that follows is limited to the VPSCHW system and its interfaces with associated systems. The reader's attention is directed to Drawings H-1-82162, Cold Vacuum Drying Facility Process Equipment Skid PandID Vacuum System, and H-1-82224, Cold Vacuum Drying Facility Mechanical Utilities Process Chilled Water PandID. Figure 1-1 shows the location and equipment arrangement for the VPSCHW system. The VPSCHW system provides chilled water to the Vacuum Purge System (VPS). The chilled water provides the ability to condense water from the multi-canister overpack (MCO) outlet gases during the MCO vacuum and purge cycles. By condensing water from the MCO purge gas, the VPS can assist in drying the contents of the MCO

Vacuum science, technology, and applications

CERN Document Server

Naik, Pramod K

2018-01-01

Vacuum plays an important role in science and technology. The study of interaction of charged particles, neutrals and radiation with each other and with solid surfaces requires a vacuum environment for reliable investigations. Vacuum has contributed immensely to advancements made in nuclear science, space, metallurgy, electrical/electronic technology, chemical engineering, transportation, robotics and many other fields. This book is intended to assist students, scientists, technicians and engineers to understand the basics of vacuum science and technology for application in their projects. The fundamental theories, concepts, devices, applications, and key inventions are discussed.

Vacuum leak detector and method

Science.gov (United States)

Edwards, Jr., David

1983-01-01

Apparatus and method for detecting leakage in a vacuum system involves a moisture trap chamber connected to the vacuum system and to a pressure gauge. Moisture in the trap chamber is captured by freezing or by a moisture adsorbent to reduce the residual water vapor pressure therein to a negligible amount. The pressure gauge is then read to determine whether the vacuum system is leaky. By directing a stream of carbon dioxide or helium at potentially leaky parts of the vacuum system, the apparatus can be used with supplemental means to locate leaks.

Current forgings and their properties for steam generator of nuclear plant

International Nuclear Information System (INIS)

Tsukada, Hisashi; Suzuki, Komei; Kusuhashi, Mikio; Sato, Ikuo

1997-01-01

Current steel forgings for steam generator (SG) of PWR plant are reviewed in the aspect of design and material improvement. The following three items are introduced. The use of integral type steel forgings for the fabrication of steam generator enhances the structural integrity and makes easier fabrication and inspection including in-service inspection. The following examples of current integral type forgings developed by the Japan Steel Works, Ltd. (JSW) are introduced: (1) primary head integrated with nozzles, manways and supports; (2) steam drum head integrated with nozzle and handhole; (3) conical shell integrated with cylindrical sections and handholes. In order to decrease the weight of steam generator, the high strength materials such as SA508, Cl.3a steel have been adopted in some cases. The properties of this steel are introduced and the chemistry and heat treatment condition are discussed. As one of the methods to minimize the macro- and micro-segregations, the use of vacuum carbon deoxidation (VCD), i.e. deoxidization of steel by gaseous CO reaction, with addition of Al for grain refining was investigated. The properties of SA508, Cl.3 steels with Low Si content are compared with those of conventional one

Current forgings and their properties for steam generator of nuclear plant

Energy Technology Data Exchange (ETDEWEB)

Tsukada, Hisashi; Suzuki, Komei; Kusuhashi, Mikio; Sato, Ikuo [Japan Steel Works Ltd., Muroran (Japan)

1997-12-31

Current steel forgings for steam generator (SG) of PWR plant are reviewed in the aspect of design and material improvement. The following three items are introduced. The use of integral type steel forgings for the fabrication of steam generator enhances the structural integrity and makes easier fabrication and inspection including in-service inspection. The following examples of current integral type forgings developed by the Japan Steel Works, Ltd. (JSW) are introduced: (1) primary head integrated with nozzles, manways and supports; (2) steam drum head integrated with nozzle and handhole; (3) conical shell integrated with cylindrical sections and handholes. In order to decrease the weight of steam generator, the high strength materials such as SA508, Cl.3a steel have been adopted in some cases. The properties of this steel are introduced and the chemistry and heat treatment condition are discussed. As one of the methods to minimize the macro- and micro-segregations, the use of vacuum carbon deoxidation (VCD), i.e. deoxidization of steel by gaseous CO reaction, with addition of Al for grain refining was investigated. The properties of SA508, Cl.3 steels with Low Si content are compared with those of conventional one.

Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

Science.gov (United States)

Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

2014-08-01

Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-12-15

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

International Nuclear Information System (INIS)

Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-01-01

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Optimization of the digital Silicon Photomultiplier for Cherenkov light detection

International Nuclear Information System (INIS)

Frach, T

2012-01-01

The Silicon Photomultiplier is a promising alternative to fast vacuum photodetectors. We developed a fully digital implementation of the Silicon Photomultiplier. The sensor is based on a single photon avalanche photodiode (SPAD) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. Photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic has the added benefit of low power consumption and possible integration of data post-processing in the sensor. In this paper, we discuss the sensor architecture together with its characteristics, and its possible optimizations for applications requiring the detection of Cherenkov light.

Technical specification for vacuum systems

International Nuclear Information System (INIS)

Khaw, J.

1987-01-01

The vacuum systems at the Stanford Linear Accelerator Center (SLAC) are primarily of all-metal construction and operate at pressures from 10 -5 to 10 -11 Torr. The primary gas loads during operation result from thermal desorption and beam-induced desorption from the vacuum chamber walls. These desorption rates can be extremely high in the case of hydrocarbons and other contaminants. These specifications place a major emphasis on eliminating contamination sources. The specifications and procedures have been written to insure the cleanliness and vacuum integrity of all SLAC vacuum systems, and to assist personnel involved with SLAC vacuum systems in choosing and designing components that are compatible with existing systems and meet the quality and reliability of SLAC vacuum standards. The specification includes requirements on design, procurement, fabrication, chemical cleaning, clean room practices, welding and brazing, helium leak testing, residual gas analyzer testing, bakeout, venting, and pumpdown. Also appended are specifications regarding acceptable vendors, isopropyl alcohol, bakeable valve cleaning procedure, mechanical engineering safety inspection, notes on synchrotron radiation, and specifications of numerous individual components

Evaporation under vacuum condition

International Nuclear Information System (INIS)

Mizuta, Satoshi; Shibata, Yuki; Yuki, Kazuhisa; Hashizume, Hidetoshi; Toda, Saburo; Takase, Kazuyuki; Akimoto, Hajime

2000-01-01

In nuclear fusion reactor design, an event of water coolant ingress into its vacuum vessel is now being considered as one of the most probable accidents. In this report, the evaporation under vacuum condition is evaluated by using the evaporation model we have developed. The results show that shock-wave by the evaporation occurs whose behavior strongly depends on the initial conditions of vacuum. And in the case of lower initial pressure and temperature, the surface temp finally becomes higher than other conditions. (author)

Silicone metalization

Energy Technology Data Exchange (ETDEWEB)

Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

2008-12-09

A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

RBS and XRD analysis of silicon doped titanium diboride films

International Nuclear Information System (INIS)

Mollica, S.; Sood, D.K.; Ghantasala, M.K.; Kothari, R.

1999-01-01

Titanium diboride is a newly developed material suitable for protective coatings. Its high temperature oxidation resistance at temperatures of 700 deg C and beyond is limited due to its poor oxidative behaviour. This paper presents a novel approach to improving the coatings' oxidative characteristics at temperatures of 700 deg C by doping with silicon. Titanium diboride films were deposited onto Si(100) wafer substrates using a DC magnetron sputtering system. Films were deposited in two different compositions, one at pure TiB 2 and the other with 20 % Si doping. These samples were vacuum annealed at 700 deg C at 1x10 -6 Torr to investigate the anaerobic behaviour of the material at elevated temperatures and to ensure that they were crystalline. Samples were then oxidised in air at 700 deg C to investigate their oxidation resistance. Annealing the films at 700 deg C in air results in the oxidation of the film as titanium and boron form TiO 2 and B 2 O 3 . Annealing is seen to produce only minor changes in the films. There is some silicon diffusion from the substrate at elevated temperatures, which is related to the porous nature of the deposited film and the high temperature heat treatments. However, silicon doped films showed relatively less oxidation characteristics after annealing in air compared with the pure TiB 2 samples

Formation of porous silicon oxide from substrate-bound silicon rich silicon oxide layers by continuous-wave laser irradiation

Science.gov (United States)

Wang, Nan; Fricke-Begemann, Th.; Peretzki, P.; Ihlemann, J.; Seibt, M.

2018-03-01

Silicon nanocrystals embedded in silicon oxide that show room temperature photoluminescence (PL) have great potential in silicon light emission applications. Nanocrystalline silicon particle formation by laser irradiation has the unique advantage of spatially controlled heating, which is compatible with modern silicon micro-fabrication technology. In this paper, we employ continuous wave laser irradiation to decompose substrate-bound silicon-rich silicon oxide films into crystalline silicon particles and silicon dioxide. The resulting microstructure is studied using transmission electron microscopy techniques with considerable emphasis on the formation and properties of laser damaged regions which typically quench room temperature PL from the nanoparticles. It is shown that such regions consist of an amorphous matrix with a composition similar to silicon dioxide which contains some nanometric silicon particles in addition to pores. A mechanism referred to as "selective silicon ablation" is proposed which consistently explains the experimental observations. Implications for the damage-free laser decomposition of silicon-rich silicon oxides and also for controlled production of porous silicon dioxide films are discussed.

Gauge field vacuum structure in geometrical aspect

International Nuclear Information System (INIS)

Konopleva, N.P.

2003-01-01

Vacuum conception is one of the main conceptions of quantum field theory. Its meaning in classical field theory is also very profound. In this case the vacuum conception is closely connected with ideas of the space-time geometry. The global and local geometrical space-time conceptions lead to different vacuum definitions and therefore to different ways of physical theory construction. Some aspects of the gauge field vacuum structure are analyzed. It is shown that in the gauge field theory the vacuum Einstein equation solutions describe the relativistic vacuum as common vacuum of all gauge fields and its sources. Instantons (both usual and hyperbolical) are regarded as nongravitating matter, because they have zero energy-momentum tensors and correspond to vacuum Einstein equations

Vacuum metastability with black holes

Energy Technology Data Exchange (ETDEWEB)

Burda, Philipp [Centre for Particle Theory, Durham University,South Road, Durham, DH1 3LE (United Kingdom); Gregory, Ruth [Centre for Particle Theory, Durham University,South Road, Durham, DH1 3LE (United Kingdom); Perimeter Institute, 31 Caroline Street North,Waterloo, ON, N2L 2Y5 (Canada); Moss, Ian G. annd [School of Mathematics and Statistics, Newcastle University,Newcastle Upon Tyne, NE1 7RU (United Kingdom)

2015-08-24

We consider the possibility that small black holes can act as nucleation seeds for the decay of a metastable vacuum, focussing particularly on the Higgs potential. Using a thin-wall bubble approximation for the nucleation process, which is possible when generic quantum gravity corrections are added to the Higgs potential, we show that primordial black holes can stimulate vacuum decay. We demonstrate that for suitable parameter ranges, the vacuum decay process dominates over the Hawking evaporation process. Finally, we comment on the application of these results to vacuum decay seeded by black holes produced in particle collisions.

Vacuum metastability with black holes

International Nuclear Information System (INIS)

Burda, Philipp; Gregory, Ruth; Moss, Ian G. annd

2015-01-01

We consider the possibility that small black holes can act as nucleation seeds for the decay of a metastable vacuum, focussing particularly on the Higgs potential. Using a thin-wall bubble approximation for the nucleation process, which is possible when generic quantum gravity corrections are added to the Higgs potential, we show that primordial black holes can stimulate vacuum decay. We demonstrate that for suitable parameter ranges, the vacuum decay process dominates over the Hawking evaporation process. Finally, we comment on the application of these results to vacuum decay seeded by black holes produced in particle collisions.

Heteroepitaxial Growth of Vacuum-Evaporated Si-Ge Films on Nano structured Silicon Substrates

International Nuclear Information System (INIS)

Ayu Wazira Azhari; Ayu Wazira Azhari; Kamaruzzaman Sopian; Saleem Hussain Zaidi

2015-01-01

In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: for example polished Si, Si micro pyramids and Si nano pillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nano pillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000 degree Celsius to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. (author)

Limitations of patterning thin films by shadow mask high vacuum chemical vapor deposition

International Nuclear Information System (INIS)

Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

2014-01-01

A key factor in engineering integrated devices such as electro-optic switches or waveguides is the patterning of high quality crystalline thin films into specific geometries. In this contribution high vacuum chemical vapor deposition (HV-CVD) was employed to grow titanium dioxide (TiO 2 ) patterns onto silicon. The directed nature of precursor transport – which originates from the high vacuum environment during the process – allows shading certain regions on the substrate by shadow masks and thus depositing patterned thin films. While the use of such masks is an emerging field in stencil or shadow mask lithography, their use for structuring thin films within HV-CVD has not been reported so far. The advantage of the employed technique is the precise control of lateral spacing and of the distance between shading mask and substrate surface which is achieved by manufacturing them directly on the substrate. As precursor transport takes place in the molecular flow regime, the precursor impinging rates (and therefore the film growth rates) on the surface can be simulated as function of the reactor and shading mask geometry using a comparatively simple mathematical model. In the current contribution such a mathematical model, which predicts impinging rates on plain or shadow mask structured substrates, is presented. Its validity is confirmed by TiO 2 -deposition on plain silicon substrates (450 °C) using titanium tetra isopropoxide as precursor. Limitations of the patterning process are investigated by the deposition of TiO 2 on structured substrates and subsequent shadow mask lift-off. The geometry of the deposits is according to the mathematical model. Shading effects due to the growing film enables to fabricate deposits with predetermined variations in topography and non-flat top deposits which are complicated to obtain by classical clean room processes. As a result of the enhanced residual pressure of decomposition products and titanium precursors and the

Silicon microelectronic field-emissive devices for advanced display technology

Science.gov (United States)

Morse, J. D.

1993-03-01

Field-emission displays (FED's) offer the potential advantages of high luminous efficiency, low power consumption, and low cost compared to AMLCD or CRT technologies. An LLNL team has developed silicon-point field emitters for vacuum triode structures and has also used thin-film processing techniques to demonstrate planar edge-emitter configurations. LLNL is interested in contributing its experience in this and other FED-related technologies to collaborations for commercial FED development. At LLNL, FED development is supported by computational capabilities in charge transport and surface/interface modeling in order to develop smaller, low-work-function field emitters using a variety of materials and coatings. Thin-film processing, microfabrication, and diagnostic/test labs permit experimental exploration of emitter and resistor structures. High field standoff technology is an area of long-standing expertise that guides development of low-cost spacers for FEDS. Vacuum sealing facilities are available to complete the FED production engineering process. Drivers constitute a significant fraction of the cost of any flat-panel display. LLNL has an advanced packaging group that can provide chip-on-glass technologies and three-dimensional interconnect generation permitting driver placement on either the front or the back of the display substrate.

Vacuum exhaust duct used for thermonuclear device

International Nuclear Information System (INIS)

Tachikawa, Nobuo; Kondo, Mitsuaki; Honda, Tsutomu.

1990-01-01

The present invention concerns a vacuum exhaust duct used for a thermonuclear device. A cylindrical metal liners is lined with a gap to the inside of a vacuum exhaust duct main body. Bellows are connected to both ends of the metal liners and the end of the bellows is welded to the vacuum exhaust duct main body. Futher, a heater is mounted to the metal liner on the side of the vacuum exhaust duct main body, and the metal liner is heated by the heater to conduct baking for the vacuum exhaust duct main body. Accordingly, since there is no requirement for elevating the temperature of the vacuum exhaust duct upon conducting baking, the vacuum exhaust duct scarcely suffers substantial deformation due to heat expansion. Further, there is also no substantial deformation for the bellows disposed between the outer circumference of the vacuum vessel and a portion of a vacuum exhaust duct, so that the durability of the bellows is greatly improved. (I.S.)

Development of the DC-RF Hybrid Plasma Source and the Application to the Etching and Texturing of the Silicon Surface

International Nuclear Information System (INIS)

Kim, Ji Hun

2011-02-01

the vacuum chamber for vacuum processing. The experiment was provided on the mono-crystalline silicon wafer. The etching was carried out with plasma consisting of SF 6 (50 sccm) as a reactive etching gas with O 2 (300 sccm) as a supporting gas and Argon (2000 ∼ 3000 sccm) as a cathode protecting gas. Etching rates were 60 μm/min at low pressure (3-5 torr) and 300 μm/min at a atmospheric pressure. The sample was positioned in such as way that the plasma flow axis would coincide with the side facet of the silicon crystal. A texturing process was performed on a crystalline silicon (c-Si) wafer to increase the efficiency of a solar cell by using a high durability DC arc plasma source at atmospheric pressure and low pressure. CF 4 and SF 6 were used as the reactive etching gases at flow rates 2 as the supporting gas in the range of the 5 - 15 %. To survey the characteristics of the pyramid formation process, plasma texturing experiments were performed by varying the working time. The optimal operating conditions of the gas flow (Ar, O 2 , CF 4 , SF 6 ), plasmatron current and processing time were determined. The pyramid angle was approximately 50 .deg. to 60 .deg. when a single-crystalline silicon surface was textured in a vacuum whereas it was approximately 75 .deg. to 90 .deg. when textured at atmospheric pressure. The reflectance decreases with decreasing pyramid angle. The reflectance of the bare silicon ranged from 40 % to the 60 % but that of the textured silicon was approximately 5 % to 20 %. This reflectance is quite low, approximately half that reported by other studies using wet and reactive ion etching (RIE) texturing. Even though DC arc plasmatron has many advantages, it is difficult to apply an industry due to the small applied area. To increase an effective processing area, we suggest a DC-RF hybrid plasma system. The DC-RF hybrid plasma system was designed and made. This system consists of a DC arc plasmatron, RF parts, reaction chamber, power feeder

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.

2015-06-18

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Oxygen defect processes in silicon and silicon germanium

KAUST Repository

Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

2015-01-01

Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

Probing the diffusion of vacuum ultraviolet ({lambda} = 172 nm) induced oxidants by nanoparticles immobilization

Energy Technology Data Exchange (ETDEWEB)

Khatri, Om P.; Hatanaka, Takeshi; Murase, Kuniaki [Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan); Sugimura, Hiroyuki, E-mail: hiroyuki.sugimura@materials.mbox.media.kyoto-u.ac.jp [Department of Materials Science and Engineering, Kyoto University, Sakyo-ku, Kyoto 606-8501 (Japan)

2009-09-30

Vacuum ultraviolet (VUV, {lambda} = 172 nm) patterning of alkyl monolayer on silicon surface has been demonstrated with emphasis on the diffusion of VUV induced oxygen-derived active species, which are accountable for the pattern broadening. The VUV photons photo-dissociates the atmospheric oxygen and water molecules into the oxygen-derived active species (oxidants). These oxidants photo-oxidize the hexadecyl (HD) monolayer in VUV irradiated regions (Khatri et al., Langmuir. 24 (2008) 12077), as well as the little concentration of oxidants diffuses towards the masked areas. In this study, we performed VUV patterning at a vacuum pressure of 10 Pa to track the diffusion pathways for the oxidants with help of gold nanoparticles (AuNPs; {phi} = 10 nm) immobilization. At VUV irradiated sites AuNPs are found as uniformly distributed, but adjacent to the pattern boundary we observed quasi-linear arrays of AuNPs, which are determined by diffusion pathways of the oxidants. The diffusion of oxidants plays vital role in pattern broadening. The site selective anchoring of AuNPs demonstrates the utility of VUV photons for the construction of functional materials with microstructural architecture.

Automatic electromagnetic valve for previous vacuum

International Nuclear Information System (INIS)

Granados, C. E.; Martin, F.

1959-01-01

A valve which permits the maintenance of an installation vacuum when electric current fails is described. It also lets the air in the previous vacuum bomb to prevent the oil ascending in the vacuum tubes. (Author)

Development of vacuum brazing furnace

International Nuclear Information System (INIS)

Singh, Rajvir; Yedle, Kamlesh; Jain, A.K.

2005-01-01

In joining of components where welding process is not possible brazing processes are employed. Value added components, high quality RF systems, UHV components of high energy accelerators, carbide tools etc. are produced using different types of brazing methods. Furnace brazing under vacuum atmosphere is the most popular and well accepted method for production of the above mentioned components and systems. For carrying out vacuum brazing successfully it is essential to have a vacuum brazing furnace with latest features of modern vacuum brazing technology. A vacuum brazing furnace has been developed and installed for carrying out brazing of components of copper, stainless steel and components made of dissimilar metals/materials. The above furnace has been designed to accommodate jobs of 700mm diameter x 2000mm long sizes with job weight of 500kgs up to a maximum temperature of 1250 degC at a vacuum of 5 x 10 -5 Torr. Oil diffusion pumping system with a combination of rotary and mechanical booster pump have been employed for obtaining vacuum. Molybdenum heating elements, radiation shield of molybdenum and Stainless Steel Grade 304 have been used. The above furnace is computer controlled with manual over ride facility. PLC and Pentium PC are integrated together to maneuver steps of operation and safety interlocks of the system. Closed loop water supply provides cooling to the system. The installation of the above system is in final stage of completion and it will be ready for use in next few months time. This paper presents insights of design and fabrication of a modern vacuum brazing furnace and its sub-system. (author)

Gases and vacua handbook of vacuum physics

CERN Document Server

Beck, A H

2013-01-01

Handbook of Vacuum Physics, Volume 1: Gases and Vacua provides information on the many aspects of vacuum technology, from material on the quantum theoretical aspects of the complex semi-conductors used for thermionic and photo-electric emission to data on the performance of commercially available pumps, gauges, and high-vacuum materials. The handbook satisfies the need of workers using vacuum apparatuses or works on the diverse applications of high-vacuum technology in research and industry. The book is a compilation of long articles prepared by experts in vacuum technology. Sufficient theoret

Hadron Contribution to Vacuum Polarisation

CERN Document Server

Davier, M; Malaescu, B; Zhang, Z

2016-01-01

Precision tests of the Standard Theory require theoretical predictions taking into account higher-order quantum corrections. Among these vacuum polarisation plays a predominant role. Vacuum polarisation originates from creation and annihilation of virtual particle–antiparticle states. Leptonic vacuum polarisation can be computed from quantum electrodynamics. Hadronic vacuum polarisation cannot because of the non-perturbative nature of QCD at low energy. The problem is remedied by establishing dispersion relations involving experimental data on the cross section for e+ e− annihilation into hadrons. This chapter sets the theoretical and experimental scene and reviews the progress achieved in the last decades thanks to more precise and complete data sets. Among the various applications of hadronic vacuum polarisation calculations, two are emphasised: the contribution to the anomalous magnetic moment of the muon, and the running of the fine structure constant α to the Z mass scale. They are fundamental ingre...

Helical type vacuum container

International Nuclear Information System (INIS)

Owada, Kimio.

1989-01-01

Helical type vacuum containers in the prior art lack in considerations for thermal expansion stresses to helical coils, and there is a possibility of coil ruptures. The object of the present invention is to avoid the rupture of helical coils wound around the outer surface of a vacuum container against heat expansion if any. That is, bellows or heat expansion absorbing means are disposed to a cross section of a helical type vacuum container. With such a constitution, thermal expansion of helical coils per se due to temperature elevation of the coils during electric supply can be absorbed by expansion of the bellows or absorption of the heat expansion absorbing means. Further, this can be attained by arranging shear pins in the direction perpendicular to the bellows axis so that the bellows are not distorted when the helical coils are wound around the helical type vacuum container. (I.S.)

Investigation of innovative silicon detector assembling solutions for hadron calorimeter modules

International Nuclear Information System (INIS)

Cai, G.; Ammannati, N.

1995-01-01

The application of large areas of silicon detector mosaics in calorimetry for high energy particles measurement in Physics has grown in the last few years and is still in progress. The high number of mosaic units in the calorimeter implies the following main requirements to be satisfied: a simple low cost for manufacturing and assembling, easy mountable/dismountable units, possibility to move or change silicon detectors easily, reliability of the electrical contacts between the aluminium layer on the silicon detector surface and the PCB breaker points.In order to satisfy the above requirements several assembling solutions have been investigated and tested recently, as fixed contact by using conducting epoxy-glues, mechanically dismountable contacts of gold-plated PCB copper to the silicon detectors, and others.The results of the tests show a general degradation of the original electrical characteristics of the contacts after of varying lengths operating times.This fact, due to corrosion phenomena assisted by chemical residuals in the contact interface, causes an irreversible damage of the detectors in the long term.In addition we found a room temperature interdiffusion of gold and copper.A promising solution to these problems can be achieved by careful removal of chemical, increase of golden layer of the PCB electrical copper contacts or aluminising them by pure aluminium vapour deposition in vacuum chamber.Thee estimated degradation time between the PCB copper and the aluminium film is very low in this case, and the risk of diffusion in the detector aluminium film surface is low along the whole operating life of the calorimeter. (orig.)

PDX vacuum vessel stress analysis

International Nuclear Information System (INIS)

Nikodem, Z.D.

1975-01-01

A stress analysis of PDX vacuum vessel is described and the summary of results is presented. The vacuum vessel is treated as a toroidal shell of revolution subjected to an internal vacuum. The critical buckling pressure is calculated. The effects of the geometrical discontinuity at the juncture of toroidal shell head and cylindrical outside wall, and the concavity of the cylindrical wall are examined. An effect of the poloidal field coil supports and the vessel outside supports on the stress distribution in the vacuum vessel is determined. A method evaluating the influence of circular ports in the vessel wall on the stress level in the vessel is outlined

Quark and gluon condensate in vacuum

International Nuclear Information System (INIS)

Vajnshtejn, A.I.; Zakharov, V.I.; Shifman, M.A.

1979-01-01

The mechanism of quark confinement has been reviewed. The fact that coloured particles in a free state cannot be observed is connected with specific properties of vacuum in quantum chromodynamics. The basic hypothesis consists in the existence of vacuum fields, quark and gluon condensates, which affect the coloured objects. The vacuum transparent relative to noncharged ''white'' states serves as a source of the force acting upon the coloured particles. It has been a sucess to examine strictly the action of the vacuum fields on quarks when the distance between them is relatively small and the force of the vacuum fields on quarks is relatively small too. It is shown that the interaction with the vacuum fields manifests itself earlier than the forces connected with the gluon exchange do. It is assumed that the vacuum condensate of quarks and gluons and its relation to properties of resonances and to the bag model exist in reality. The dispersion sum rules are used for calculating masses and lepton widths of resonances

CAS CERN Accelerator School vacuum technology. Proceedings

International Nuclear Information System (INIS)

Turner, S.

1999-01-01

These proceedings present the lectures given at the twelfth specialized course organized by the CERN Accelerator School (CAS), the topic this time being 'Vacuum Technology'. Despite the importance of vacuum technology in the design and operation of particle accelerators at CERN and at the many other accelerators already installed around the world, this was the first time that CAS has organized a course devoted entirely to this topic. Perhaps this reflects the facts that vacuum has become one of the more critical aspects of future accelerators, and that many of the pioneers in the accelerator field are being replaced by new, younger personnel. The lectures start with the basic concepts of the physics and technology of vacuum followed by detailed descriptions of the many different types of gas-pumping devices and methods to measure the pressures achieved. The outgassing characteristics of the different materials used in the construction of vacuum systems and the optimisation of cleaning methods to reduce this outgassing are then explained together with the effects of the residual gases on the particle beams. Then follow chapters on leak detection, materials and vacuum system engineering. Finally, seminars are presented on designing vacuum systems, the history of vacuum devices, the LHC (large hadron collider) vacuum system, vacuum systems for electron storage rings, and quality assurance for vacuum. (orig.)

An Efficient, Versatile, and Safe Access to Supported Metallic Nanoparticles on Porous Silicon with Ionic Liquids

Directory of Open Access Journals (Sweden)

Walid Darwich

2016-06-01

Full Text Available The metallization of porous silicon (PSi is generally realized through physical vapor deposition (PVD or electrochemical processes using aqueous solutions. The former uses a strong vacuum and does not allow for a conformal deposition into the pores. In the latter, the water used as solvent causes oxidation of the silicon during the reduction of the salt precursors. Moreover, as PSi is hydrophobic, the metal penetration into the pores is restricted to the near-surface region. Using a solution of organometallic (OM precursors in ionic liquid (IL, we have developed an easy and efficient way to fully metallize the pores throughout the several-µm-thick porous Si. This process affords supported metallic nanoparticles characterized by a narrow size distribution. This process is demonstrated for different metals (Pt, Pd, Cu, and Ru and can probably be extended to other metals. Moreover, as no reducing agent is necessary (the decomposition in an argon atmosphere at 50 °C is fostered by surface silicon hydride groups borne by PSi, the safety and the cost of the process are improved.

An Efficient, Versatile, and Safe Access to Supported Metallic Nanoparticles on Porous Silicon with Ionic Liquids.

Science.gov (United States)

Darwich, Walid; Haumesser, Paul-Henri; Santini, Catherine C; Gaillard, Frédéric

2016-06-03

The metallization of porous silicon (PSi) is generally realized through physical vapor deposition (PVD) or electrochemical processes using aqueous solutions. The former uses a strong vacuum and does not allow for a conformal deposition into the pores. In the latter, the water used as solvent causes oxidation of the silicon during the reduction of the salt precursors. Moreover, as PSi is hydrophobic, the metal penetration into the pores is restricted to the near-surface region. Using a solution of organometallic (OM) precursors in ionic liquid (IL), we have developed an easy and efficient way to fully metallize the pores throughout the several-µm-thick porous Si. This process affords supported metallic nanoparticles characterized by a narrow size distribution. This process is demonstrated for different metals (Pt, Pd, Cu, and Ru) and can probably be extended to other metals. Moreover, as no reducing agent is necessary (the decomposition in an argon atmosphere at 50 °C is fostered by surface silicon hydride groups borne by PSi), the safety and the cost of the process are improved.

ULTRARAPID VACUUM-MICROWAVE HISTOPROCESSING

NARCIS (Netherlands)

KOK, LP; BOON, ME

A novel histoprocessing method for paraffin sections is presented in which the combination of vacuum and microwave exposure is the key element. By exploiting the decrease in boiling temperature under vacuum, the liquid molecules in the tissues have been successfully extracted and exchanged at

Development of a cooling system and vacuum chamber for the pion tracker for HADES

Energy Technology Data Exchange (ETDEWEB)

Wirth, Joana [Technische Univ. Muenchen, Garching (Germany). Excellence Cluster Universe; Collaboration: HADES-Collaboration

2013-07-01

One of the future experiments planned at SIS18 with the HADES spectrometer in GSI Darmstadt envisages the employment of pion beam colliding on LH2 or nuclear target. Due to the fact that secondary pion beam has high momentum spread, since the precise knowledge of pion momentum is mandatory to carry out the planned exclusive measurements, we have to measure the momentum for each individual pion. For this purpose our group is developing a pion beam tracking system, which consists of two silicon detectors. Both detectors are located in the beamline and therefore have to cope the high-intensity secondary beam. Cooling of a silicon detector strongly improves its radiation hardness and performance. It reduces the leakage current and thus the noise, which is important for the detection of MIPs like pions. We have designed and built a complete prototype system of vacuum chamber and detector cooling. With use of the Finite Element Method we simulated the mechanical and thermal properties of the prototype. The proposed poster shows the current status and performance of the cooling system for a test-detector, focusing on the reduction of the leakage current and the noise.

Intensifying the Casimir force between two silicon substrates within three different layers of materials

International Nuclear Information System (INIS)

Seyedzahedi, A.; Moradian, A.; Setare, M.R.

2016-01-01

We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO 2 , mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

Intensifying the Casimir force between two silicon substrates within three different layers of materials

Energy Technology Data Exchange (ETDEWEB)

Seyedzahedi, A. [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of); Moradian, A., E-mail: a.moradian@uok.ac.ir [Department of Science, Campus of Bijar, University of Kurdistan, Bijar (Iran, Islamic Republic of); Setare, M.R., E-mail: rezakord@ipm.ir [Department of Science, University of Kurdistan, Sanandaj (Iran, Islamic Republic of)

2016-04-01

We investigate the Casimir force for a system composed of two thick slabs as substrates within three different homogeneous layers. We use the scattering approach along with the Matsubara formalism in order to calculate the Casimir force at finite temperature. First, we focus on constructing the reflection matrices and then we calculate the Casimir force for a water–lipid system. According to the conventional use of silicon as a substrate, we apply the formalism to calculate the Casimir force for layers of Au, VO{sub 2}, mica, KCl and foam rubber on the thick slabs of silicon. Afterwards, introducing an increasing factor, we compare our results with Lifshitz force in the vacuum between two semispaces of silicon in order to illustrate the influence of the layers on intensifying the Casimir force. We also calculate the Casimir force between two slabs of the forementioned materials with finite thicknesses to indicate the substrate's role in increasing the obtained Casimir force. Our simple calculation is interesting since one can extend it along with the Rigorous Coupled Wave Analysis to systems containing inhomogeneous layers as good candidates for designing nanomechanical devices.

Selection of vacuum seals for EBT-P

International Nuclear Information System (INIS)

Dillow, C.F.; Adlon, G.L.; Stubblefield, V.E.

1981-01-01

Elmo Bumpy Torus Proof of Principle (EBT-P) is a magnetic fusion RandD facility being constructed by McDonnell Douglas Astronautics Company - St. Louis Division of Oak Ridge National Laboratory (ORNL). EBT-P is a truly unique fusion device requiring careful consideration in selecting both the primary vacuum seals on the toroidal vessel and the secondary vacuum seals in components such as vacuum pumps and and valves. The vacuum seal environment is described and the considerations in vacuum seal selection fully discussed. Methods for protecting vacuum seals in pumps and valves from the microwave environments are also presented

Vacuum transitions in dual models

International Nuclear Information System (INIS)

Pashnev, A.I.; Volkov, D.V.; Zheltukhin, A.A.

1976-01-01

The investigation is continued of the spontaneous vacuum transition problem in the Neview-Schwartz dual model (NSDM). It is shown that vacuum transitions allow disclosing of supplementary degeneration in the resonance state spectrum. The dual amplitudes possess an internal structure corresponding to the presence of an infinite number of quarks with increasing masses and retained charges. The Adler principle holds. Analytic continuation on the constant of induced vacuum transitions makes it possible to establish the existence of spontaneous vacuum transitions in the NSDM. The consequence of this fact is the exact SU(2) symmetry of π, rho meson trajectories and the Higgs mechanism in the model. In this case the ratios of masses of particles leading trajectories are analogous to those obtained in the current algebra. It is shown that in the NSDM there arises chiral SU(2) x SU(2) x U(1) x U(1) x ... symmetry resulting from spontaneous vacuum transitions

Vacuum maintenance in vacuum insulation panels exemplified with a staggered beam VIP

Energy Technology Data Exchange (ETDEWEB)

Kwon, Jae-Sung; Jang, Choong Hyo; Jung, Haeyong; Song, Tae-Ho [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology, Guseong-dong 373-1, Yuseong-gu, Daejeon (Korea, Republic of)

2010-05-15

Thermal insulation performance of a vacuum insulation panel (VIP) is highly dependent on the inner pressure of the VIP. Long-term vacuum maintenance characteristics are investigated in this study for a VIP with an example of polymer staggered beam structure as the core material. Various gas sources deteriorating the vacuum level in the VIP are investigated based on theoretical models and experiments. Gas permeation occurring through heat-sealed flanges and pinholes in the barrier envelope is the largest gas leakage source. The calculated gas permeation rate is in accordance with the experimental result. To reduce these permeations, a three-side sealing envelope and double enveloping are proposed. Outgassing from the core material and inner surface of the envelope is also critical. It is significantly reduced by a baking pre-treatment in vacuum. When the estimated total gas load exceeds the allowable limit within a few years, a getter material may be applied. Double enveloping structure with a getter is promising as it ensures a lifetime of more than 20 years. (author)

Structural and Mechanical Properties of Nanostructured C-Ag Thin Films Synthesized by Thermionic Vacuum Arc Method

Directory of Open Access Journals (Sweden)

Rodica Vladoiu

2018-01-01

Full Text Available Nanostructured C-Ag thin films of 200 nm thickness were successfully synthesized by the Thermionic Vacuum Arc (TVA method. The influence of different substrates (glass, silicon wafers, and stainless steel on the microstructure, morphology, and mechanical properties of nanostructured C-Ag thin films was characterized by High-Resolution Transmission Electron Microscopy (HRTEM, Scanning Electron Microscopy (SEM, Atomic Force Microscopy (AFM, and TI 950 (Hysitron nanoindenter equipped with Berkovich indenter, respectively. The film’s hardness deposited on glass (HC-Ag/Gl = 1.8 GPa was slightly lower than in the case of the C-Ag film deposited on a silicon substrate (HC-Ag/Si = 2.2 GPa. Also the apparent elastic modulus Eeff was lower for C-Ag/Gl sample (Eeff = 100 GPa than for C-Ag/Si (Eeff = 170 GPa, while the values for average roughness are Ra=2.9 nm (C-Ag/Si and Ra=10.6 (C-Ag/Gl. Using the modulus mapping mode, spontaneous and indentation-induced aggregation of the silver nanoparticles was observed for both C-Ag/Gl and C-Ag/Si samples. The nanocomposite C-Ag film exhibited not only higher hardness and effective elastic modulus, but also a higher fracture resistance toughness to the silicon substrate compared to the glass substrate.

Vacuum guidelines for ISA insertions

International Nuclear Information System (INIS)

Edwards, D. Jr.

1976-01-01

Vacuum requirements place design restrictions on the ISA insertions. The vacuum tube diameter, given a distance L between pumps, is determined by the desorption of molecules from the wall under the impact of ions created by the beam, whereas the thickness of the tube must be sufficient to prevent collapse. In addition, the entire vacuum chamber must be able to be baked out at approximately 200 0 C

Particle contamination in vacuum systems

International Nuclear Information System (INIS)

Martignac, J.; Bonin, B.; Henriot, C.; Poupeau, J.P.; Koltchakian, I.; Kocic, D.; Herbeaux, Ch.; Marx, J.P.

1996-01-01

Many vacuum devices, like RF cavities, are sensitive to particle contamination. This fact has motivated a considerable effort of cleanliness from the SRF community. The present paper reports the first results of a general study trying to identify the most contaminating steps during assembly and vacuum operation of the cavity. The steps investigated here are gasket assembly, evacuation and venting of the vacuum system, and operation of sputter ion pumps. (author)

Particle contamination in vacuum systems

International Nuclear Information System (INIS)

Martignac, J.; Bonin, B.; Henriot, C.; Poupeau, J.P.; Koltchakian, I.; Kocic, D.; Herbeaux, Ch.; Marx, J.P.

1996-01-01

Many vacuum devices, like RF cavities, are sensitive to particle contamination. This fact has motivated a considerable effort of cleanliness from the SRF community. The first results of a general study trying to identify the most contaminating steps during assembly and vacuum operation of the cavity is reported. The steps investigated here are gasket assembly, evacuation and venting of the vacuum system, and operation of sputter ion pumps. (author)

Research on vacuum insulation for cryocables

International Nuclear Information System (INIS)

Graneau, P.

1974-01-01

Vacuum insulation, as compared with solid insulation, simplifies the construction of both resistive or superconducting cryogenic cables. The common vacuum space in the cable can furnish thermal insulation between the environment and the cryogenic coolant, provide electrical insulation between conductors, and establish thermal isolation between go- and return-coolant streams. The differences between solid and vacuum high voltage insulation are discussed, and research on the design, materials selection, and testing of vacuum insulated cryogenic cables is described

Vacuum-insulated catalytic converter

Science.gov (United States)

Benson, David K.

2001-01-01

A catalytic converter has an inner canister that contains catalyst-coated substrates and an outer canister that encloses an annular, variable vacuum insulation chamber surrounding the inner canister. An annular tank containing phase-change material for heat storage and release is positioned in the variable vacuum insulation chamber a distance spaced part from the inner canister. A reversible hydrogen getter in the variable vacuum insulation chamber, preferably on a surface of the heat storage tank, releases hydrogen into the variable vacuum insulation chamber to conduct heat when the phase-change material is hot and absorbs the hydrogen to limit heat transfer to radiation when the phase-change material is cool. A porous zeolite trap in the inner canister absorbs and retains hydrocarbons from the exhaust gases when the catalyst-coated substrates and zeolite trap are cold and releases the hydrocarbons for reaction on the catalyst-coated substrate when the zeolite trap and catalyst-coated substrate get hot.

Silicon epitaxy on textured double layer porous silicon by LPCVD

International Nuclear Information System (INIS)

Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

2010-01-01

Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

Spent nuclear fuel project cold vacuum drying facility vacuum and purge system design description

Energy Technology Data Exchange (ETDEWEB)

IRWIN, J.J.

1998-11-30

This document provides the System Design Description (SDD) for the Cold Vacuum Drying Facility (CVDF) Vacuum and Purge System (VPS) . The SDD was developed in conjunction with HNF-SD-SNF-SAR-O02, Safety Analysis Report for the Cold Vacuum Drying Facility, Phase 2, Supporting Installation of Processing Systems (Garvin 1998), The HNF-SD-SNF-DRD-002, 1998, Cold Vacuum Drying Facility Design Requirements, and the CVDF Design Summary Report. The SDD contains general descriptions of the VPS equipment, the system functions, requirements and interfaces. The SDD provides references for design and fabrication details, operation sequences and maintenance. This SDD has been developed for the SNFP Operations Organization and shall be updated, expanded, and revised in accordance with future design, construction and startup phases of the CVDF until the CVDF final ORR is approved.

Spent nuclear fuel project cold vacuum drying facility vacuum and purge system design description

International Nuclear Information System (INIS)

IRWIN, J.J.

1998-01-01

This document provides the System Design Description (SDD) for the Cold Vacuum Drying Facility (CVDF) Vacuum and Purge System (VPS) . The SDD was developed in conjunction with HNF-SD-SNF-SAR-O02, Safety Analysis Report for the Cold Vacuum Drying Facility, Phase 2, Supporting Installation of Processing Systems (Garvin 1998), The HNF-SD-SNF-DRD-002, 1998, Cold Vacuum Drying Facility Design Requirements, and the CVDF Design Summary Report. The SDD contains general descriptions of the VPS equipment, the system functions, requirements and interfaces. The SDD provides references for design and fabrication details, operation sequences and maintenance. This SDD has been developed for the SNFP Operations Organization and shall be updated, expanded, and revised in accordance with future design, construction and startup phases of the CVDF until the CVDF final ORR is approved

Color-magnetic permeability of QCD vacuum

Energy Technology Data Exchange (ETDEWEB)

Saito, T [Kyoto Prefectural Univ. of Medicine (Japan); Shigemoto, K

1980-03-01

In the very strong background gauge field the QCD true vacuum has been shown to have lower energy than the ''perturbative vacuum.'' The color-magnetic permeability of the QCD true vacuum is then calculated to be 1/2 within the quark-one-loop approximation.

Vacuum vessel for thermonuclear device

International Nuclear Information System (INIS)

Kikuchi, Mitsuru; Kurita, Gen-ichi; Onozuka, Masaki; Suzuki, Masaru.

1997-01-01

Heat of inner walls of a vacuum vessel that receive radiation heat from plasmas by way of first walls is removed by a cooling medium flowing in channels for cooling the inner walls. Nuclear heat generation of constitutional materials of the vacuum vessel caused by fast neutrons and γ rays is removed by a cooling medium flowing in cooling channels disposed in the vacuum vessel. Since the heat from plasmas and the nuclear heat generation are removed separately, the amount of the cooling medium flowing in the channels for cooling inner walls is increased for cooling a great amount of heat from plasmas while the amount of the cooling medium flowing in the channels for cooling the inside of the vacuum vessel is reduced for cooling the small amount of nuclear heat generation. Since the amount of the cooling medium can thus be optimized, the capacity of the facilities for circulating the cooling medium can be reduced. In addition, since the channels for cooling the inner walls and the channels of cooling medium formed in the vacuum vessel are disposed to the inner walls of the vacuum vessel on the side opposite to plasmas, integrity of the channels relative to leakage of the cooling medium can be ensured. (N.H.)

Vacuum vessel for thermonuclear device

Energy Technology Data Exchange (ETDEWEB)

Kikuchi, Mitsuru; Kurita, Gen-ichi [Japan Atomic Energy Research Inst., Tokyo (Japan); Onozuka, Masaki; Suzuki, Masaru

1997-07-31

Heat of inner walls of a vacuum vessel that receive radiation heat from plasmas by way of first walls is removed by a cooling medium flowing in channels for cooling the inner walls. Nuclear heat generation of constitutional materials of the vacuum vessel caused by fast neutrons and {gamma} rays is removed by a cooling medium flowing in cooling channels disposed in the vacuum vessel. Since the heat from plasmas and the nuclear heat generation are removed separately, the amount of the cooling medium flowing in the channels for cooling inner walls is increased for cooling a great amount of heat from plasmas while the amount of the cooling medium flowing in the channels for cooling the inside of the vacuum vessel is reduced for cooling the small amount of nuclear heat generation. Since the amount of the cooling medium can thus be optimized, the capacity of the facilities for circulating the cooling medium can be reduced. In addition, since the channels for cooling the inner walls and the channels of cooling medium formed in the vacuum vessel are disposed to the inner walls of the vacuum vessel on the side opposite to plasmas, integrity of the channels relative to leakage of the cooling medium can be ensured. (N.H.)

Stable and self-adaptive performance of mechanically pumped CO2 two-phase loops for AMS-02 tracker thermal control in vacuum

International Nuclear Information System (INIS)

Zhang, Z.; Sun, X.-H.; Tong, G.-N.; Huang, Z.-C.; He, Z.-H.; Pauw, A.; Es, J. van; Battiston, R.; Borsini, S.; Laudi, E.; Verlaat, B.; Gargiulo, C.

2011-01-01

A mechanically pumped CO 2 two-phase loop cooling system was developed for the temperature control of the silicon tracker of AMS-02, a cosmic particle detector to work in the International Space Station. The cooling system (called TTCS, or Tracker Thermal Control System), consists of two evaporators in parallel to collect heat from the tracker's front-end electronics, two radiators in parallel to emit the heat into space, and a centrifugal pump that circulates the CO 2 fluid that carries the heat to the radiators, and an accumulator that controls the pressure, and thus the temperature of the evaporators. Thermal vacuum tests were performed to check and qualify the system operation in simulated space thermal environment. In this paper, we reported the test results which show that the TTCS exhibited excellent temperature control ability, including temperature homogeneity and stability, and self-adaptive ability to the various external heat flux to the radiators. Highlights: → The active-pumped CO 2 two-phase cooling loop passed the thermal vacuum test. → It provides high temperature homogeneity and stability thermal boundaries. → Its working temperature is controllable in vacuum environment. → It possesses self-adaptive ability to imbalanced external heat fluxes.

Ultra high vacuum systems for accelerators

International Nuclear Information System (INIS)

Loefgren, P.

2001-01-01

Full text: In order to perform controlled, stable, and reproducible experiments, several research areas today require very low pressures. Maybe the most important example is the research that is performed in storage rings and accelerators where the lifetime and stability of particle beams depends critically on the vacuum conditions. Although the vacuum requirements ultimately depend on the kind of experiments that is performed, the studies of more and more rare and exotic species in storage rings and accelerators today pushes the demands on the vacuum conditions towards lower and lower pressures. The final pressure obtained in the vacuum system can often be the key factor for the outcome of an experiment. Pioneering work in vacuum technology has therefore often been performed at storage rings and accelerator facilities around the world. In order to reach pressures in the low UHV regime and lower (below 10 -11 mbar), several aspects have to be considered which implies choosing the proper materials, pumps and vacuum gauges. In the absence of gases inleaking from the outside, the rate of gas entering a vacuum system is determined by the release of molecules adsorbed on the surfaces and the outgassing from the bulk of the vacuum chamber walls. This means that the choice of material and, equally important, the pre treatment of the material, must be such that these rates are minimised. Today the most widely used material for vacuum applications are stainless steel. Besides its many mechanical advantages, it is resistant to corrosion and oxidation. If treated correctly the major gas source in a stainless steel chamber is hydrogen outgassing from the chamber walls. The hydrogen outgassing can be decreased by vacuum firing at 950 deg. C under vacuum. In addition to choosing the right materials the choice of vacuum pumps is important for the final pressure. Since no vacuum pump is capable of taking care of all kinds of gases found in the rest gas at pressures below 10 -11

Wireless Integrated Microelectronic Vacuum Sensor System

Science.gov (United States)

Krug, Eric; Philpot, Brian; Trott, Aaron; Lawrence, Shaun

2013-01-01

NASA Stennis Space Center's (SSC's) large rocket engine test facility requires the use of liquid propellants, including the use of cryogenic fluids like liquid hydrogen as fuel, and liquid oxygen as an oxidizer (gases which have been liquefied at very low temperatures). These fluids require special handling, storage, and transfer technology. The biggest problem associated with transferring cryogenic liquids is product loss due to heat transfer. Vacuum jacketed piping is specifically designed to maintain high thermal efficiency so that cryogenic liquids can be transferred with minimal heat transfer. A vacuum jacketed pipe is essentially two pipes in one. There is an inner carrier pipe, in which the cryogenic liquid is actually transferred, and an outer jacket pipe that supports and seals the vacuum insulation, forming the "vacuum jacket." The integrity of the vacuum jacketed transmission lines that transfer the cryogenic fluid from delivery barges to the test stand must be maintained prior to and during engine testing. To monitor the vacuum in these vacuum jacketed transmission lines, vacuum gauge readings are used. At SSC, vacuum gauge measurements are done on a manual rotation basis with two technicians, each using a handheld instrument. Manual collection of vacuum data is labor intensive and uses valuable personnel time. Additionally, there are times when personnel cannot collect the data in a timely fashion (i.e., when a leak is detected, measurements must be taken more often). Additionally, distribution of this data to all interested parties can be cumbersome. To simplify the vacuum-gauge data collection process, automate the data collection, and decrease the labor costs associated with acquiring these measurements, an automated system that monitors the existing gauges was developed by Invocon, Inc. For this project, Invocon developed a Wireless Integrated Microelectronic Vacuum Sensor System (WIMVSS) that provides the ability to gather vacuum

Baking results of KSTAR vacuum vessel

International Nuclear Information System (INIS)

Kim, S. T.; Kim, Y. J.; Kim, K. M.; Im, D. S.; Joung, N. Y.; Yang, H. L.; Kim, Y. S.; Kwon, M.

2009-01-01

The Korea Superconducting Tokamak Advanced Research (KSTAR) is an advanced superconducting tokamak designed to establish a scientific and technological basis for an attractive fusion reactor. The fusion energy in the tokamak device is released through fusion reactions of light atoms such as deuterium or helium in hot plasma state, of which temperature reaches several hundreds of millions Celsius. The high temperature plasma is created in the vacuum vessel that provides ultra high vacuum status. Accordingly, it is most important for the vacuum condition to keep clean not only inner space but also surface of the vacuum vessel to make high quality plasma. There are two methods planned to clean the wall surface of the KSTAR vacuum vessel. One is surface baking and the other is glow discharge cleaning (GDC). To bake the vacuum vessel, De-Ionized (DI) water is heated to 130 .deg. C and circulated in the passage between double walls of the vacuum vessel (VV) in order to bake the surface. The GDC operation uses hydrogen and inert gas discharges. In this paper, general configuration and brief introduction of the baking result will be reported

Baking results of KSTAR vacuum vessel

Energy Technology Data Exchange (ETDEWEB)

Kim, S. T.; Kim, Y. J.; Kim, K. M.; Im, D. S.; Joung, N. Y.; Yang, H. L.; Kim, Y. S.; Kwon, M. [National Fusion Research Institute, Daejeon (Korea, Republic of)

2009-05-15

The Korea Superconducting Tokamak Advanced Research (KSTAR) is an advanced superconducting tokamak designed to establish a scientific and technological basis for an attractive fusion reactor. The fusion energy in the tokamak device is released through fusion reactions of light atoms such as deuterium or helium in hot plasma state, of which temperature reaches several hundreds of millions Celsius. The high temperature plasma is created in the vacuum vessel that provides ultra high vacuum status. Accordingly, it is most important for the vacuum condition to keep clean not only inner space but also surface of the vacuum vessel to make high quality plasma. There are two methods planned to clean the wall surface of the KSTAR vacuum vessel. One is surface baking and the other is glow discharge cleaning (GDC). To bake the vacuum vessel, De-Ionized (DI) water is heated to 130 .deg. C and circulated in the passage between double walls of the vacuum vessel (VV) in order to bake the surface. The GDC operation uses hydrogen and inert gas discharges. In this paper, general configuration and brief introduction of the baking result will be reported.

Optical luminescence from alkyl-passivated Si nanocrystals under vacuum ultraviolet excitation: Origin and temperature dependence of the blue and orange emissions

OpenAIRE

Chao, Y; Houlton, A; Horrocks, BR; Hunt, MRC; Poolton, NRJ; Yang, J; Šiller, L

2006-01-01

The origin and stability of luminescence are critical issues for Si nanocrystals which are intended for use as biological probes. The optical luminescence of alkyl-monolayer-passivated silicon nanocrystals was studied under excitation with vacuum ultraviolet photons (5.1–23 eV). Blue and orange emission bands were observed simultaneously, but the blue band only appeared at low temperatures (8.7 eV). At 8 K, the peak wavelengths of the emission bands were 430±2 nm (blue) and 600±2 nm (orange)....

Vacuum system of SST-1 Tokamak

International Nuclear Information System (INIS)

Khan, Ziauddin; Pathan, Firozkhan; George, Siju; Semwal, Pratibha; Dhanani, Kalpesh; Paravastu, Yuvakiran; Thankey, Prashant; Ramesh, Gattu; Himabindu, Manthena; Pradhan, Subrata

2013-01-01

Highlights: ► Air leaks developed during ongoing SST-1 cooldown campaign were detected online using RGA. ► The presence of N 2 and O 2 gases with the ratio of their partial pressures with ∼3.81:1 confirmed the air leaks. ► Baking of SST-1 was done efficiently by flowing hot N 2 gas in C-channels welded on inner surfaces without any problem. ► In-house fabricated demountable bull nose couplers were demonstrated for high temperature and pressure applications. ► Cryopumping effect was observed when liquid helium cooled superconducting magnets reached below 63 K. -- Abstract: Vacuum chambers of Steady State Superconducting (SST-1) Tokamak comprises of the vacuum vessel and the cryostat. The plasma will be confined inside the vacuum vessel while the cryostat houses the superconducting magnet systems (TF and PF coils), LN 2 cooled thermal shields and hydraulics for these circuits. The vacuum vessel is an ultra-high (UHV) vacuum chamber while the cryostat is a high-vacuum (HV) chamber. In order to achieve UHV inside the vacuum vessel, it would be baked at 150 °C for longer duration. For this purpose, U-shaped baking channels are welded inside the vacuum vessel. The baking will be carried out by flowing hot nitrogen gas through these channels at 250 °C at 4.5 bar gauge pressure. During plasma operation, the pressure inside the vacuum vessel will be raised between 1.0 × 10 −4 mbar and 1.0 × 10 −5 mbar using piezoelectric valves and control system. An ultimate pressure of 4.78 × 10 −6 mbar is achieved inside the vacuum vessel after 100 h of pumping. The limitation is due to the development of few leaks of the order of 10 −5 mbar l/s at the critical locations of the vacuum vessel during baking which was confirmed with the presence of nitrogen gas and oxygen gas with the ratio of ∼3.81:1 indicating air leak. Similarly an ultimate vacuum of 2.24 × 10 −5 mbar is achieved inside the cryostat. Baking of the vacuum vessel up to 110 °C with ±10 �

Evacuation of the NET vacuum chamber

International Nuclear Information System (INIS)

Muller, R.A.

1987-01-01

Parametric calculations of the evacuation process were carried out for the NET-vacuum chamber involving two blanket designs. The results show that with an acceptable vacuum pumping capacity the required start vacuum conditions can be realized within reasonable time. The two blanket concepts do not differ remarkably in their evacuation behaviour. The remaining large pressure differences between the different locations of the vacuum chamber can be reduced if approximately 30% of the total gas flow is extracted from the heads of the blanket replacement ports

Evacuation of the NET vacuum chamber

International Nuclear Information System (INIS)

Mueller, R.

1986-01-01

Parametric calculations of the evacuation process were carried out for the NET-vacuum chamber involving two blanket designs. The results show that with an acceptable vacuum pumping capacity the required start vacuum conditions can be realized within reasonable time. The two blanket concepts do not differ remarkably in their evacuation behaviour. The remaining large pressure differences between the different locations of the vacuum chamber can be reduced if approximately 30% of the total gas flow is extracted from the heads of the blanket replacement ports. (author)

Vacuum Bellows, Vacuum Piping, Cryogenic Break, and Copper Joint Failure Rate Estimates for ITER Design Use

Energy Technology Data Exchange (ETDEWEB)

L. C. Cadwallader

2010-06-01

The ITER international project design teams are working to produce an engineering design in preparation for construction of the International Thermonuclear Experimental Reactor (ITER) tokamak. During the course of this work, questions have arisen in regard to safety barriers and equipment reliability as important facets of system design. The vacuum system designers have asked several questions about the reliability of vacuum bellows and vacuum piping. The vessel design team has asked about the reliability of electrical breaks and copper-copper joints used in cryogenic piping. Research into operating experiences of similar equipment has been performed to determine representative failure rates for these components. The following chapters give the research results and the findings for vacuum system bellows, power plant stainless steel piping (amended to represent vacuum system piping), cryogenic system electrical insulating breaks, and copper joints.

Big Bang or vacuum fluctuation

International Nuclear Information System (INIS)

Zel'dovich, Ya.B.

1980-01-01

Some general properties of vacuum fluctuations in quantum field theory are described. The connection between the ''energy dominance'' of the energy density of vacuum fluctuations in curved space-time and the presence of singularity is discussed. It is pointed out that a de-Sitter space-time (with the energy density of the vacuum fluctuations in the Einstein equations) that matches the expanding Friedman solution may describe the history of the Universe before the Big Bang. (P.L.)

Vacuum vessel for thermonuclear device

International Nuclear Information System (INIS)

Kikuchi, Mitsuru; Nagashima, Keisuke; Suzuki, Masaru; Onozuka, Masaki.

1997-01-01

A vacuum vessel main body and structural members at the inside and the outside of the vacuum vessel main body are constituted by structural materials activated by irradiation of neutrons from plasmas such as stainless steels. Shielding members comprising tungsten or molybdenum are disposed on the surface of the vacuum vessel main body and the structural members of the inside and the outside of the main body. The shielding members have a function also as first walls or a seat member for the first walls. Armor tiles may be disposed to the shielding members. The shielding members and the armor tiles are secured to a securing seat member disposed, for example, to an inner plate of the vacuum vessel main body by bolts. Since the shielding members are disposed, it is not necessary to constitute the vacuum vessel main body and the structural members at the inside and the outside thereof by using a low activation material which is less activated, such as a titanium alloy. (I.N.)

Vacuum vessel for thermonuclear device

Energy Technology Data Exchange (ETDEWEB)

Kikuchi, Mitsuru; Nagashima, Keisuke [Japan Atomic Energy Research Inst., Tokyo (Japan); Suzuki, Masaru; Onozuka, Masaki

1997-07-11

A vacuum vessel main body and structural members at the inside and the outside of the vacuum vessel main body are constituted by structural materials activated by irradiation of neutrons from plasmas such as stainless steels. Shielding members comprising tungsten or molybdenum are disposed on the surface of the vacuum vessel main body and the structural members of the inside and the outside of the main body. The shielding members have a function also as first walls or a seat member for the first walls. Armor tiles may be disposed to the shielding members. The shielding members and the armor tiles are secured to a securing seat member disposed, for example, to an inner plate of the vacuum vessel main body by bolts. Since the shielding members are disposed, it is not necessary to constitute the vacuum vessel main body and the structural members at the inside and the outside thereof by using a low activation material which is less activated, such as a titanium alloy. (I.N.)

Design consideration on the synchrotron ultrahigh vacuum system

International Nuclear Information System (INIS)

Tsujikawa, H.; Chida, K.; Mizobuchi, A.; Miyahara, A.

1982-01-01

Ultrahigh vacuum production for the high-energy heavy-ion accelerator poses special problems concerning beam-gas molecule and beam-wall interactions. In this paper, summary of the TARN ultrahigh vacuum system and design criteria of the synchrotron ultrahigh vacuum system are presented. On-beam pressure of 4 x 10 -11 Torr is achieved in the TARN ultrahigh vacuum system, of which experiences through the construction and the operation are described and discussed. With emphasis on the application of newly developed technique in the fabrication of vacuum chamber and ultrahigh vacuum pump for the synchrotron ultrahigh vacuum system. (author)

Vacuum status-display and sector-conditioning programs

International Nuclear Information System (INIS)

Skelly, J.; Yen, S.

1989-01-01

Two programs have been developed for observation and control of the AGS vacuum system, which include these notable features: they incorporate a graphical user interface, and they are driven by a relational database which describes the vacuum system. The vacuum system comprises some 440 devices organized into 28 vacuum sectors. The Status Display Program invites menu selection of a sector, interrogates the relational database for relevant vacuum devices, acquires live readbacks, and posts a graphical display of their status. The Sector Conditioning Program likewise invites sector selection, produces the same status display, and also implements process control logic on the sector devices to pump the sector down from atmospheric pressure to high vacuum over a period extending for several hours. As additional devices are installed in the vacuum system, the devices are likewise added to the relational database; these programs then automatically include the new devices. 2 refs., 1 fig

Dynamical effects of QCD vacuum structure

International Nuclear Information System (INIS)

Ferreira, Erasmo

1994-01-01

The role of the QCD vacuum structure in the determination of the properties of states and processes occurring in the confinement regime of QCD is reviewed. The finite range of the vacuum correlations is discussed, and an analytical form is suggested for the correlation functions. The role of the vacuum quantum numbers in the phenomenology of high-energy scattering is reviewed. The vacuum correlation model of non-perturbative QCD is mentioned as a bridge between the fundamental theory and the description of the experiments. (author). 13 refs., 1 fig

Vacuum technology in the chemical industry

CERN Document Server

Jorisch, Wolfgang

2015-01-01

Based on the very successful German edition and a seminar held by the German Engineers` Association (VDI) on a regular basis for years now, this English edition has been thoroughly updated and revised to reflect the latest developments. It supplies in particular the special aspects of vacuum technology, applied vacuum pump types and vacuum engineering in the chemical, pharmaceutical and process industry application-segments. The text includes chapters dedicated to latest European regulations for operating in hazardous zones with vacuum systems, methods for process pressure control and regulati

Running vacuum cosmological models: linear scalar perturbations

Energy Technology Data Exchange (ETDEWEB)

Perico, E.L.D. [Instituto de Física, Universidade de São Paulo, Rua do Matão 1371, CEP 05508-090, São Paulo, SP (Brazil); Tamayo, D.A., E-mail: elduartep@usp.br, E-mail: tamayo@if.usp.br [Departamento de Astronomia, Universidade de São Paulo, Rua do Matão 1226, CEP 05508-900, São Paulo, SP (Brazil)

2017-08-01

In cosmology, phenomenologically motivated expressions for running vacuum are commonly parameterized as linear functions typically denoted by Λ( H {sup 2}) or Λ( R ). Such models assume an equation of state for the vacuum given by P-bar {sub Λ} = - ρ-bar {sub Λ}, relating its background pressure P-bar {sub Λ} with its mean energy density ρ-bar {sub Λ} ≡ Λ/8π G . This equation of state suggests that the vacuum dynamics is due to an interaction with the matter content of the universe. Most of the approaches studying the observational impact of these models only consider the interaction between the vacuum and the transient dominant matter component of the universe. We extend such models by assuming that the running vacuum is the sum of independent contributions, namely ρ-bar {sub Λ} = Σ {sub i} ρ-bar {sub Λ} {sub i} . Each Λ i vacuum component is associated and interacting with one of the i matter components in both the background and perturbation levels. We derive the evolution equations for the linear scalar vacuum and matter perturbations in those two scenarios, and identify the running vacuum imprints on the cosmic microwave background anisotropies as well as on the matter power spectrum. In the Λ( H {sup 2}) scenario the vacuum is coupled with every matter component, whereas the Λ( R ) description only leads to a coupling between vacuum and non-relativistic matter, producing different effects on the matter power spectrum.

46 CFR 154.804 - Vacuum protection.

Science.gov (United States)

2010-10-01

... 46 Shipping 5 2010-10-01 2010-10-01 false Vacuum protection. 154.804 Section 154.804 Shipping... Systems § 154.804 Vacuum protection. (a) Except as allowed under paragraph (b) of this section, each cargo tank must have a vacuum protection system meeting paragraph (a)(1) of this section and either paragraph...

Vacuum Mechatronics And Insvection For Self-Contained Manufacturing

Science.gov (United States)

Belinski, Steve E.; Shirazi, Majid; Seidel, Thomas E.; Hackwood, Susan

1990-02-01

The vacuum environment is increasingly being used in manufacturing operations, especially in the semiconductor industry. Shrinking linewidths and feature sizes dictate that cleanliness standards become continually more strict. Studies at the Center for Robotic Systems in Microelectronics (CRSM) indicate that a controlled vacuum enclosure can provide a superior clean environment. In addition, since many microelectronic fabrication steps are already carried out under vacuum, self-contained multichamber processing systems are being developed at a rapid pace. CRSM support of these systems includes the development of a research system, the Self-contained Automated Robotic Factory (SCARF), a vacuum-compatible robot, and investigations of particulate characterization in vacuum and inspection for multichamber systems. Successful development of complex and expensive multichamber systems is, to a great extent, dependent upon the discipline called vacuum mechatronics, which includes the design and development of vacuum-compatible computer-controlled mechanisms for manipulating, sensing and testing in a vacuum environment. Here the constituents of the vacuum mechatronics discipline are defined and reviewed in the context of the importance to self-contained in-vacuum manufacturing.

Vacuum system for HIMAC synchrotrons

International Nuclear Information System (INIS)

Kanazawa, M.; Sudou, M.; Sato, K.

1994-01-01

HIMAC synchrotrons are now under construction, which require vacuum chambers of large aperture and high vacuum of about 10 -9 torr. Wide thin wall vacuum chamber of 0.3 mm thickness reinforced with ribs has been developed as the chamber at dipole magnet. We have just now started to evacuate the lower ring. The obtained average value was about 5x10 -8 torr with turbo-molecular and sputter ion pumps, and 1.1x10 -9 torr after baking. (author)

Vacuum vessel for thermonuclear device

International Nuclear Information System (INIS)

Hagiwara, Koji; Imura, Yasuya.

1979-01-01

Purpose: To provide constituted method for easily performing baking of vacuum vessel, using short-circuiting segments. Constitution: At the time of baking, one turn circuit is formed by the vacuum vessel and short-circuiting segments, and current transformer converting the one turn circuit into a secondary circuit by the primary coil and iron core is formed, and the vacuum vessel is Joule heated by an induction current from the primary coil. After completion of baking, the short-circuiting segments are removed. (Kamimura, M.)

ITER diagnostic system: Vacuum interface

Energy Technology Data Exchange (ETDEWEB)

Patel, K.M., E-mail: Kaushal.Patel@iter.org [ITER Organization, Route de Vinon sur Verdon, 13115 St Paul-Lez-Durance (France); Udintsev, V.S.; Hughes, S.; Walker, C.I.; Andrew, P.; Barnsley, R.; Bertalot, L. [ITER Organization, Route de Vinon sur Verdon, 13115 St Paul-Lez-Durance (France); Drevon, J.M. [Bertin Technologies, BP 22, 13762 Aix-en Provence cedex 3 (France); Encheva, A. [ITER Organization, Route de Vinon sur Verdon, 13115 St Paul-Lez-Durance (France); Kashchuk, Y. [Institution “PROJECT CENTER ITER”, 1, Akademika Kurchatova pl., Moscow (Russian Federation); Maquet, Ph. [Bertin Technologies, BP 22, 13762 Aix-en Provence cedex 3 (France); Pearce, R.; Taylor, N.; Vayakis, G.; Walsh, M.J. [ITER Organization, Route de Vinon sur Verdon, 13115 St Paul-Lez-Durance (France)

2013-10-15

Diagnostics play an essential role for the successful operation of the ITER tokamak. They provide the means to observe control and to measure plasma during the operation of ITER tokamak. The components of the diagnostic system in the ITER tokamak will be installed in the vacuum vessel, in the cryostat, in the upper, equatorial and divertor ports, in the divertor cassettes and racks, as well as in various buildings. Diagnostic components that are placed in a high radiation environment are expected to operate for the life of ITER. There are approx. 45 diagnostic systems located on ITER. Some diagnostics incorporate direct or independently pumped extensions to maintain their necessary vacuum conditions. They require a base pressure less than 10{sup −7} Pa, irrespective of plasma operation, and a leak rate of less than 10{sup −10} Pa m{sup 3} s{sup −1}. In all the cases it is essential to maintain the ITER closed fuel cycle. These directly coupled diagnostic systems are an integral part of the ITER vacuum containment and are therefore subject to the same design requirements for tritium and active gas confinement, for all normal and accidental conditions. All the diagnostics, whether or not pumped, incorporate penetration of the vacuum boundary (i.e. window assembly, vacuum feedthrough etc.) and demountable joints. Monitored guard volumes are provided for all elements of the vacuum boundary that are judged to be vulnerable by virtue of their construction, material, load specification etc. Standard arrangements are made for their construction and for the monitoring, evacuating and leak testing of these volumes. Diagnostic systems are incorporated at more than 20 ports on ITER. This paper will describe typical and particular arrangements of pumped diagnostic and monitored guard volume. The status of the diagnostic vacuum systems, which are at the start of their detailed design, will be outlined and the specific features of the vacuum systems in ports and extensions

ITER diagnostic system: Vacuum interface

International Nuclear Information System (INIS)

Patel, K.M.; Udintsev, V.S.; Hughes, S.; Walker, C.I.; Andrew, P.; Barnsley, R.; Bertalot, L.; Drevon, J.M.; Encheva, A.; Kashchuk, Y.; Maquet, Ph.; Pearce, R.; Taylor, N.; Vayakis, G.; Walsh, M.J.

2013-01-01

Diagnostics play an essential role for the successful operation of the ITER tokamak. They provide the means to observe control and to measure plasma during the operation of ITER tokamak. The components of the diagnostic system in the ITER tokamak will be installed in the vacuum vessel, in the cryostat, in the upper, equatorial and divertor ports, in the divertor cassettes and racks, as well as in various buildings. Diagnostic components that are placed in a high radiation environment are expected to operate for the life of ITER. There are approx. 45 diagnostic systems located on ITER. Some diagnostics incorporate direct or independently pumped extensions to maintain their necessary vacuum conditions. They require a base pressure less than 10 −7 Pa, irrespective of plasma operation, and a leak rate of less than 10 −10 Pa m 3 s −1 . In all the cases it is essential to maintain the ITER closed fuel cycle. These directly coupled diagnostic systems are an integral part of the ITER vacuum containment and are therefore subject to the same design requirements for tritium and active gas confinement, for all normal and accidental conditions. All the diagnostics, whether or not pumped, incorporate penetration of the vacuum boundary (i.e. window assembly, vacuum feedthrough etc.) and demountable joints. Monitored guard volumes are provided for all elements of the vacuum boundary that are judged to be vulnerable by virtue of their construction, material, load specification etc. Standard arrangements are made for their construction and for the monitoring, evacuating and leak testing of these volumes. Diagnostic systems are incorporated at more than 20 ports on ITER. This paper will describe typical and particular arrangements of pumped diagnostic and monitored guard volume. The status of the diagnostic vacuum systems, which are at the start of their detailed design, will be outlined and the specific features of the vacuum systems in ports and extensions will be described

Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

Science.gov (United States)

Whitman, Pamela K.; Feke, Donald L.

1986-01-01

The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

Vacuum system of SST-1 Tokamak

Energy Technology Data Exchange (ETDEWEB)

Khan, Ziauddin, E-mail: ziauddin@ipr.res.in [Institute for Plasma Research, Near Indira Bridge, Bhat, Gandhinagar 382 428 (India); Pathan, Firozkhan; George, Siju; Semwal, Pratibha; Dhanani, Kalpesh; Paravastu, Yuvakiran; Thankey, Prashant; Ramesh, Gattu; Himabindu, Manthena; Pradhan, Subrata [Institute for Plasma Research, Near Indira Bridge, Bhat, Gandhinagar 382 428 (India)

2013-10-15

Highlights: ► Air leaks developed during ongoing SST-1 cooldown campaign were detected online using RGA. ► The presence of N{sub 2} and O{sub 2} gases with the ratio of their partial pressures with ∼3.81:1 confirmed the air leaks. ► Baking of SST-1 was done efficiently by flowing hot N{sub 2} gas in C-channels welded on inner surfaces without any problem. ► In-house fabricated demountable bull nose couplers were demonstrated for high temperature and pressure applications. ► Cryopumping effect was observed when liquid helium cooled superconducting magnets reached below 63 K. -- Abstract: Vacuum chambers of Steady State Superconducting (SST-1) Tokamak comprises of the vacuum vessel and the cryostat. The plasma will be confined inside the vacuum vessel while the cryostat houses the superconducting magnet systems (TF and PF coils), LN{sub 2} cooled thermal shields and hydraulics for these circuits. The vacuum vessel is an ultra-high (UHV) vacuum chamber while the cryostat is a high-vacuum (HV) chamber. In order to achieve UHV inside the vacuum vessel, it would be baked at 150 °C for longer duration. For this purpose, U-shaped baking channels are welded inside the vacuum vessel. The baking will be carried out by flowing hot nitrogen gas through these channels at 250 °C at 4.5 bar gauge pressure. During plasma operation, the pressure inside the vacuum vessel will be raised between 1.0 × 10{sup −4} mbar and 1.0 × 10{sup −5} mbar using piezoelectric valves and control system. An ultimate pressure of 4.78 × 10{sup −6} mbar is achieved inside the vacuum vessel after 100 h of pumping. The limitation is due to the development of few leaks of the order of 10{sup −5} mbar l/s at the critical locations of the vacuum vessel during baking which was confirmed with the presence of nitrogen gas and oxygen gas with the ratio of ∼3.81:1 indicating air leak. Similarly an ultimate vacuum of 2.24 × 10{sup −5} mbar is achieved inside the cryostat. Baking of the

Rotary bayonets for cryogenic and vacuum service

International Nuclear Information System (INIS)

Rucinski, R.A.; Dixon, K.D.; Krasa, R.; Krempetz, K.J.; Mulholland, G.T.; Trotter, G.R.; Urbin, J.B.

1993-07-01

Rotary bayonets were designed, tested, and installed for liquid nitrogen, liquid argon, and vacuum service. This paper will present the design, testing, and service record for two sizes of vacuum jacketed cryogenic rotary bayonets and two sizes of vacuum service rotary bayonets. Materials used in construction provide electrical isolation across the bayonet joint. The joint permits 360 degrees of rotation between the male and female pipe sections while maintaining integrity of service. Assemblies using three such joints were built to allow end connection points to be translated through at least 1 meter of horizontal travel while kept in service. Vacuum jacketed sizes built in-house at Fermi National Accelerator Laboratory are 1-1/2 in. inner pipe size, 3 in. vacuum jacket, and 4 in. inner pipe size, 6 in. vacuum jacket The single wall vacuum service bayonets are in 4 in. and 6 in. pipe sizes. The bayonets have successfully been in active service for over one year

Rotary bayonets for cryogenic and vacuum service

International Nuclear Information System (INIS)

Rucinski, R.A.; Dixon, K.D.; Krasa, R.; Krempetz, K.J.; Mulholland, G.T.; Trotter, G.R.; Urbin, J.B.

1994-01-01

Rotary bayonets were designed, tested, and installed for liquid nitrogen, liquid argon, and vacuum service. This paper will present the design, testing, and service record for two sizes of vacuum jacketed cryogenic rotary bayonets and two sizes of vacuum service rotary bayonets. Materials used in construction provide electrical isolation across the bayonet joint. The joint permits 360 degrees of rotation between the male and female pipe sections while maintaining integrity of service. Assemblies using three such joints were built to allow end connection points to be translated through at least 1 meter of horizontal travel while kept in service. Vacuum jacketed sizes built in-house at Fermi National Accelerator Laboratory are 1 1/2 inches inner pipe size, 3 inches vacuum jacket, and 4 inches inner pipe size, 6 inches vacuum jacket. The single wall vacuum service bayonets are in 4 inch and 6 inch pipe sizes. The bayonets have successfully been in active service for over one year

TPX vacuum vessel transient thermal and stress conditions

International Nuclear Information System (INIS)

Feldshteyn, Y.; Dinkevich, S.; Feng, T.; Majumder, D.

1995-01-01

The TPX vacuum vessel provides the vacuum boundary for the plasma and the mechanical support for the internal components. Another function of the vacuum vessel is to contain neutron shielding water in the double wall space during normal operation. This double wall space serves as a heat reservoir for the entire vacuum vessel during bakeout. The vacuum vessel and the internal components are subjected to thermal stresses induced by a nonuniform temperature distribution within the structure during bakeout. A successful Conceptual Design Review in March 1993 has established superheated steam as the heating source of the vacuum vessel. A transient bakeout mode of the vacuum vessel and in-vessel components has been analyzed to evaluate transient period duration, proper temperature level, actual thermal stresses and performance of the steam equipment. Thermally, the vacuum vessel structure may be considered as an adiabatic system because it is perfectly insulated by the strong surrounding vacuum and multiple layers of superinsulation. Important aspects of the analysis are described herein

Joining silicon carbide to austenitic stainless steel through diffusion welding; Stellingen behorende bij het proefschrift

Energy Technology Data Exchange (ETDEWEB)

Krugers, Jan-Paul

1993-01-19

In this thesis, the results are presented of a study dealing with joining silicon carbide to austenitic stainless steel AIS316 by means of diffusion welding. Welding experiments were carried out without and with the use of a metallic intermediate, like copper, nickel and copper-nickel alloys at various conditions of process temperature, process time, mechanical pressure and interlayer thickness. Most experiments were carried out in high vacuum. For reasons of comparison, however, some experiments were also carried out in a gas shielded environment of 95 vol.% Ar and 5 vol.% H₂.

Design foundation of vacuum system for electron beam machine

International Nuclear Information System (INIS)

Darsono; Suprapto; Djasiman

1999-01-01

Vacuum system is a main part of electron beam Machine because (EBM) the electron can not be produced without this vacuum. Vacuum system consists of vacuum pump, connecting pipe, valve, and vacuum gauge. The design vacuum system of EBM, basis knowledge and technology of vacuum is needed. The paper describes types of vacuum pump, calculation of pipe conductance and pumping time of vacuum system then there are used as consideration of criteria to choose vacuum pump for EBM. From the result of study, it is concluded that for EBM of 500 keV/10 mA which is going to use for wood coating and with consideration of economic and technic factor it is better to use diffusion pump. (author)

Development of a vacuum superinsulation panel

Energy Technology Data Exchange (ETDEWEB)

Timm, H; Seefeldt, D; Nitze, C

1983-05-01

After completion of the investigations the vacuum-insulated panel is available as prototype. The aim of the investigations was to optimize and to finalize the vacuum superinsulation system with regard to a pressure-resistant, temperature-resistant thermal insulation of high efficiency. In this connection, particularly investigations with regard to vacuum-tight sealing, compression and evacuation of powder filling as well as special material investigations were performed. The application-specific utilization of the vacuum-insulated panel and the adjustment to special operational conditions can now be started. Application possibilities are at present seen in coverings or linings with high temperature and/or pressure requirements.

Vacuum phonon tunneling.

Science.gov (United States)

Altfeder, Igor; Voevodin, Andrey A; Roy, Ajit K

2010-10-15

Field-induced phonon tunneling, a previously unknown mechanism of interfacial thermal transport, has been revealed by ultrahigh vacuum inelastic scanning tunneling microscopy (STM). Using thermally broadened Fermi-Dirac distribution in the STM tip as in situ atomic-scale thermometer we found that thermal vibrations of the last tip atom are effectively transmitted to sample surface despite few angstroms wide vacuum gap. We show that phonon tunneling is driven by interfacial electric field and thermally vibrating image charges, and its rate is enhanced by surface electron-phonon interaction.

Vacuum and ultravacuum physics and technology

CERN Document Server

Bello, Igor

2018-01-01

Vacuum technology has enormous impact on human life in many aspects and fields, such as metallurgy, material development and production, food and electronic industry, microelectronics, device fabrication, physics, materials science, space science, engineering, chemistry, technology of low temperature, pharmaceutical industry, and biology. All decorative coatings used in jewelries and various daily products—including shiny decorative papers, the surface finish of watches, and light fixtures—are made using vacuum technological processes. Vacuum analytical techniques and vacuum technologies are pillars of the technological processes, material synthesis, deposition, and material analyses—all of which are used in the development of novel materials, increasing the value of industrial products, controlling the technological processes, and ensuring the high product quality. Based on physical models and calculated examples, the book provides a deeper look inside the vacuum physics and technology.

Comprehending the structure of a vacuum vessel and in-vessel components of fusion machines. 1. Comprehending the vacuum vessel structure

International Nuclear Information System (INIS)

Onozuka, Masanori; Nakahira, Masataka

2006-01-01

The functions, conditions and structure of vacuum vessel using tokamak fusion machines are explained. The structural standard and code of vacuum vessel, process of vacuum vessel design, and design of ITER vacuum vessel are described. Production and maintenance of ultra high vacuum, confinement of radioactive materials, support of machines in vessel and electromagnetic force, radiation shield, plasma vertical stability, one-turn electric resistance, high temperature baking heat and remove of nuclear heat, reduce of troidal ripple, structural standard, features of safety of nuclear fusion machines, subjects of structural standard of fusion vacuum vessel, design flow of vacuum vessel, establishment of radial build, selections of materials, baking and cooling method, basic structure, structure of special parts, shield structure, and of support structure, and example of design of structure, ITER, are stated. (S.Y.)

Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

International Nuclear Information System (INIS)

Tsukamoto, K.; Akasaka, Y.; Horie, K.

1977-01-01

Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

Vacuum Acceptance Tests for the UHV Room Temperature Vacuum System of the LHC during LS1

CERN Document Server

Cattenoz, G; Bregliozzi, G; Calegari, D; Gallagher, J; Marraffa, A; Chiggiato, P

2014-01-01

During the CERN Large Hadron Collider (LHC) first long shut down (LS1), a large number of vacuum tests are carried out on consolidated or newly fabricated devices. In such a way, the vacuum compatibility is assessed before installation in the UHV system of the LHC. According to the equipment’s nature, the vacuum acceptance tests consist in functional checks, leak test, outgassing rate measurements, evaluation of contaminants by Residual Gas Analysis (RGA), pumping speed measurements and qualification of the H2 sticking probability of Non-Evaporable-Getter (NEG) coating. In this paper, the methods used for the tests and the acceptance criteria are described. A summary of the measured vacuum characteristics for the tested components is also given.

Porous silicon: silicon quantum dots for photonic applications

International Nuclear Information System (INIS)

Pavesi, L.; Guardini, R.

1996-01-01

Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

Vacuum anti-shielding of monopoles

International Nuclear Information System (INIS)

Goebel, D.J.

1984-01-01

This chapter examines the difficulties in calculating the vacuum polarization, or magnetization, induced in the vacuum by a monopole. The usual Lagrangian formalism and consequent Feynman rules do not apply. Another problem is that the interaction strength between the monopole and a charge is not small (unless it vanishes exactly) because it is quantized to half integer values. Perturbation theory is therefore not applicable. The discussed problems are solved by using the old fashioned method of calculating a vacuum expectation value as a sum over single particle modes

High current vacuum closing switch

International Nuclear Information System (INIS)

Dolgachev, G.I.; Maslennikov, D.D.; Romanov, A.S.; Ushakov, A.G.

2005-01-01

The paper proposes a powerful pulsed closing vacuum switch for high current commutation consisting of series of the vacuum diodes with near 1 mm gaps having closing time determined by the gaps shortening with the near-electrode plasmas [ru

Operation of arc heating furnace on manufacturing gigantic ingots and segregation of gigantic ingots

International Nuclear Information System (INIS)

Niimi, Takayasu; Okamura, Masayoshi

1976-01-01

The techniques and procedure for manufacturing gigantic ingots heavier than 200 t are described. Especially, practical results of an arc heating furnace which plays an important role in the procedure and segregation of gigantic ingots are discussed in detail. By appropriate operations of the arc heating furnance, hydrogen and phosphorus are kept unchanged, and oxygen and sulphur decrease to very low levels. Furthermore, the temperature can be accurately controlled. The application of multipour technique reduces segregation and its degree is dependent on kinds of steel. V-segregation and inverted V-segregation in steel deoxidized with carbon in vacuum seem to be very slight. (auth.)

Silicon-Rich Silicon Carbide Hole-Selective Rear Contacts for Crystalline-Silicon-Based Solar Cells.

Science.gov (United States)

Nogay, Gizem; Stuckelberger, Josua; Wyss, Philippe; Jeangros, Quentin; Allebé, Christophe; Niquille, Xavier; Debrot, Fabien; Despeisse, Matthieu; Haug, Franz-Josef; Löper, Philipp; Ballif, Christophe

2016-12-28

The use of passivating contacts compatible with typical homojunction thermal processes is one of the most promising approaches to realizing high-efficiency silicon solar cells. In this work, we investigate an alternative rear-passivating contact targeting facile implementation to industrial p-type solar cells. The contact structure consists of a chemically grown thin silicon oxide layer, which is capped with a boron-doped silicon-rich silicon carbide [SiC x (p)] layer and then annealed at 800-900 °C. Transmission electron microscopy reveals that the thin chemical oxide layer disappears upon thermal annealing up to 900 °C, leading to degraded surface passivation. We interpret this in terms of a chemical reaction between carbon atoms in the SiC x (p) layer and the adjacent chemical oxide layer. To prevent this reaction, an intrinsic silicon interlayer was introduced between the chemical oxide and the SiC x (p) layer. We show that this intrinsic silicon interlayer is beneficial for surface passivation. Optimized passivation is obtained with a 10-nm-thick intrinsic silicon interlayer, yielding an emitter saturation current density of 17 fA cm -2 on p-type wafers, which translates into an implied open-circuit voltage of 708 mV. The potential of the developed contact at the rear side is further investigated by realizing a proof-of-concept hybrid solar cell, featuring a heterojunction front-side contact made of intrinsic amorphous silicon and phosphorus-doped amorphous silicon. Even though the presented cells are limited by front-side reflection and front-side parasitic absorption, the obtained cell with a V oc of 694.7 mV, a FF of 79.1%, and an efficiency of 20.44% demonstrates the potential of the p + /p-wafer full-side-passivated rear-side scheme shown here.

Silicon Ingot Casting - Heat Exchanger Method Multi-wire Slicing - Fixed Abrasive Slicing Technique. Phase 3 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-cost Solar Array Project

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1979-01-01

Several 20 cm diameter silicon ingots, up to 6.3 kg. were cast with good crystallinity. The graphite heat zone can be purified by heating it to high temperatures in vacuum. This is important in reducing costs and purification of large parts. Electroplated wires with 45 um synthetic diamonds and 30 um natural diamonds showed good cutting efficiency and lifetime. During slicing of a 10 cm x 10 cm workpiece, jerky motion occurred in the feed and rocking mechanisms. This problem is corrected and modifications were made to reduce the weight of the bladeheat by 50%.

Vacuum considerations summary

International Nuclear Information System (INIS)

1977-01-01

The vacuum system for Heavy Ion Fusion machines can be divided according to pressure into 4 parts: (a) Ion Sources; (b) Linear Accelerators; (c) Circular Accelerators, Accumulators and Storage Rings; and (d) Reactors. Since ion sources will need rather conventional pumping arrangements and reactors will operate with greater pressures, depending on their mode of operation, only items b and c will be treated in this report. In particular, the vacuum system design will be suggested for the machines proposed by various scenarios arrived at during the workshop. High mass numbers will be assumed

Vacuum systems for the ILC helical undulator

CERN Document Server

Malyshev, O B; Clarke, J A; Bailey, I R; Dainton, J B; Malysheva, L I; Barber, D P; Cooke, P; Baynham, E; Bradshaw, T; Brummitt, A; Carr, S; Ivanyushenkov, Y; Rochford, J; Moortgat-Pick, G A

2007-01-01

The International Linear Collider (ILC) positron source uses a helical undulator to generate polarized photons of ∼10MeV∼10MeV at the first harmonic. Unlike many undulators used in synchrotron radiation sources, the ILC helical undulator vacuum chamber will be bombarded by photons, generated by the undulator, with energies mostly below that of the first harmonic. Achieving the vacuum specification of ∼100nTorr∼100nTorr in a narrow chamber of 4–6mm4–6mm inner diameter, with a long length of 100–200m100–200m, makes the design of the vacuum system challenging. This article describes the vacuum specifications and calculations of the flux and energy of photons irradiating the undulator vacuum chamber and considers possible vacuum system design solutions for two cases: cryogenic and room temperature.

Re-circulating linac vacuum system

International Nuclear Information System (INIS)

Wells, Russell P.; Corlett, John N.; Zholents, Alexander A.

2003-01-01

The vacuum system for a proposed 2.5 GeV, 10ΜA recirculating linac synchrotron light source [1] is readily achievable with conventional vacuum hardware and established fabrication processes. Some of the difficult technical challenges associated with synchrotron light source storage rings are sidestepped by the relatively low beam current and short beam lifetime requirements of a re-circulating linac. This minimal lifetime requirement leads directly to relatively high limits on the background gas pressure through much of the facility. The 10ΜA average beam current produces very little synchrotron radiation induced gas desorption and thus the need for an ante-chamber in the vacuum chamber is eliminated. In the arc bend magnets, and the insertion devices, the vacuum chamber dimensions can be selected to balance the coherent synchrotron radiation and resistive wall wakefield effects, while maintaining the modest limits on the gas pressure and minimal outgassing

DC photogun vacuum characterization through photocathode lifetime studies

International Nuclear Information System (INIS)

Marcy Stutzman; Joseph Grames; Matt Poelker; Kenneth Surles-Law; Philip Adderley

2007-01-01

Excellent vacuum is essential for long photocathode lifetimes in DC high voltage photoelectron guns. Vacuum Research at Thomas Jefferson National Accelerator Facility has focused on characterizing the existing vacuum systems at the CEBAF polarized photoinjector and on quantifying improvements for new systems. Vacuum chamber preprocessing, full activation of NEG pumps and NEG coating the chamber walls should improve the vacuum within the electron gun, however, pressure measurement is difficult at pressures approaching the extreme-high-vacuum (XHV) region and extractor gauge readings are not significantly different between the improved and original systems. The ultimate test of vacuum in a DC high voltage photogun is the photocathode lifetime, which is limited by the ionization and back-bombardment of residual gasses. Discussion will include our new load-locked gun design as well as lifetime measurements in both our operational and new photo-guns, and the correlations between measured vacuum and lifetimes will be investigated

Troubleshooting vacuum systems steam turbine surface condensers and refinery vacuum towers

CERN Document Server

Lieberman, Norman P

2012-01-01

Vacuum systems are in wide spread use in the petrochemical plants, petroleum refineries and power generation plants. The existing texts on this subject are theoretical in nature and only deal with how the equipment functions when in good mechanical conditions, from the viewpoint of the equipment vendor.  In this much-anticipated volume, one of the most well-respected and prolific process engineers in the world takes on troubleshooting vacuum systems, and especially steam ejectors, an extremely complex and difficult subject that greatly effects the profitability of the majority of the world'

Laterally Driven Resonant Pressure Sensor with Etched Silicon Dual Diaphragms and Combined Beams

Directory of Open Access Journals (Sweden)

Xiaohui Du

2016-01-01

Full Text Available A novel structure of the resonant pressure sensor is presented in this paper, which tactfully employs intercoupling between dual pressure-sensing diaphragms and a laterally driven resonant strain gauge. After the resonant pressure sensor principle is introduced, the coupling mechanism of the diaphragms and resonator is analyzed and the frequency equation of the resonator based on the triangle geometry theory is developed for this new coupling structure. The finite element (FE simulation results match the theoretical analysis over the full scale of the device. This pressure sensor was first fabricated by dry/wet etching and thermal silicon bonding, followed by vacuum-packaging using anodic bonding technology. The test maximum error of the fabricated sensor is 0.0310%F.S. (full scale in the range of 30 to 190 kPa, its pressure sensitivity is negative and exceeding 8 Hz/kPa, and its Q-factor reaches 20,000 after wafer vacuum-packaging. A novel resonant pressure sensor with high accuracy is presented in this paper.

Vacuum arc anode phenomena

International Nuclear Information System (INIS)

Miller, H.C.

1976-01-01

A brief review of anode phenomena in vacuum arcs is presented. Discussed in succession are: the transition of the arc into the anode spot mode; the temperature of the anode before, during and after the anode spot forms; and anode ions. Characteristically the anode spot has a temperature of the order of the atmospheric boiling point of the anode material and is a copious source of vapor and energetic ions. The dominant mechanism controlling the transition of the vacuum arc into the anode spot mode appears to depend upon the electrode geometry, the electrode material, and the current waveform of the particular vacuum arc being considered. Either magnetic constriction in the gap plasma or gross anode melting can trigger the transition; indeed, a combination of the two is a common cause of anode spot formation

239pu alpha spectrum analysis based on PIPS detector response function and variations with vacuum and distance

Institute of Scientific and Technical Information of China (English)

Rui Shi; Xian-Guo Tuo; Huai-Liang Li; Jian-Bo Yang; Yi Cheng; Hong-Long Zheng

2017-01-01

Effect factors of the absorption of the source,air,entrance window,and dead layer of a detector must be considered in the measurement of monoenergetic alpha particles,along with statsfical noise and other factors that collectively cause the alpha spectrum to exhibit a well-known low-energy tail.Therefore,the establishment of an alpha spectrum detector response function from the perspective of a signaling system must consider the various factors mentioned above.The detector response function is the convolution of an alphaparticle pulse function,two exponential functions,and a Gaussian function,followed by calculation of the parameters of the detector response function using the weighted leastsquares fitting method as proposed in this paper.In our experiment,239pu alpha spectra were measured by a highresolution,passivated implanted planar silicon (PIPS)detector at 10 levels of vacuum and 10 source-detector distances.The spectrum-fitting results were excellent as evaluated by reduced Chi-square (x2) and correlation coefficients.Finally,the variation of parameters with vacuum level and source-detector distance was studied.Results demonstrate that ο,τ1,and τ2 exhibit no obvious trend of variation with vacuum in the range 2000-20,000 mTorr,and at a confidence level of 95％,the values of τ1 and τ2 decline in a similar fashion with source-detector distance by the power exponential function,while the value of ο declines linearly.

Resistor cooling in a vacuum

International Nuclear Information System (INIS)

Crittenden, R.; Krider, J.

1987-01-01

This note describes thermal measurements which were done on a resistor operating both in air at one atmosphere pressure and in a vacuum of a few milliTorr. The motivation for this measurement was our interest in operating a BGO crystal-photomultiplier tube-base assembly in a vacuum, as a synchrotron radiation detector to tag electrons in the MT beam. We wished to determine what fraction of the total resistor power was dissipated by convection in air, in order to know whether there would be excessive heating of the detector assembly in a vacuum. 3 figs

Micro-channel cooling for silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Flaschel, Nils

2017-12-15

Silicon tracking detectors employed in high-energy physics are located very close to the interaction points of the colliding particle beams. The high energetic radiation emerging from the interaction induces defects into the silicon, downgrading the efficiency to collect the charges created by passing particles and increasing the noise while data taking. Cooling the sensors to low temperatures can help to prevent defects and maintain a high efficiency and lower noise level. In order to maximize the LHC's discovery potential, the collider and its detectors will be upgraded to a higher luminosity around 2024. The conditions inside the detector will become harsher demanding that the technology must adapt to the new situation. Radiation damage is already an issue in the current ATLAS detector and therefore a huge number of parameters are constantly monitored and evaluated to ensure optimal operation. To provide the best possible settings the behavior of the sensors inside the ATLAS Inner Detector is predicted using simulations. In this work several parameters in the simulation including the depletion voltage and the crosstalk between sensor strips of the SCT detector are analyzed and compared with data. The main part of this work concerns the investigation of a novel cooling system based on microchannels etched into silicon in a generic research and development project at DESY and IMB-CNM. A channel layout is designed providing a homogeneous flow distribution across a large surface area and tested in a computational fluid simulation before its production. Two different fabrication techniques, anodic and eutectic bonding, are used to test prototypes with differing mechanical and thermal properties. Hydromechanical and thermal measurements are performed to fully characterize the flow inside the device and the thermal properties of the prototype in air and in a vacuum. The thermal behavior is analyzed by means of local measurements with thermal resistors and infrared

Micro-channel cooling for silicon detectors

International Nuclear Information System (INIS)

Flaschel, Nils

2017-12-01

Silicon tracking detectors employed in high-energy physics are located very close to the interaction points of the colliding particle beams. The high energetic radiation emerging from the interaction induces defects into the silicon, downgrading the efficiency to collect the charges created by passing particles and increasing the noise while data taking. Cooling the sensors to low temperatures can help to prevent defects and maintain a high efficiency and lower noise level. In order to maximize the LHC's discovery potential, the collider and its detectors will be upgraded to a higher luminosity around 2024. The conditions inside the detector will become harsher demanding that the technology must adapt to the new situation. Radiation damage is already an issue in the current ATLAS detector and therefore a huge number of parameters are constantly monitored and evaluated to ensure optimal operation. To provide the best possible settings the behavior of the sensors inside the ATLAS Inner Detector is predicted using simulations. In this work several parameters in the simulation including the depletion voltage and the crosstalk between sensor strips of the SCT detector are analyzed and compared with data. The main part of this work concerns the investigation of a novel cooling system based on microchannels etched into silicon in a generic research and development project at DESY and IMB-CNM. A channel layout is designed providing a homogeneous flow distribution across a large surface area and tested in a computational fluid simulation before its production. Two different fabrication techniques, anodic and eutectic bonding, are used to test prototypes with differing mechanical and thermal properties. Hydromechanical and thermal measurements are performed to fully characterize the flow inside the device and the thermal properties of the prototype in air and in a vacuum. The thermal behavior is analyzed by means of local measurements with thermal resistors and infrared

Evaluation of a Prototype Hybrid Vacuum Pump to Provide Vacuum-Assisted Suspension for Above-Knee Prostheses.

Science.gov (United States)

Major, Matthew J; Caldwell, Ryan; Fatone, Stefania

2015-12-01

Vacuum-assisted suspension (VAS) of prosthetic sockets utilizes a pump to evacuate air from between the prosthetic liner and socket, and are available as mechanical or electric systems. This technical note describes a hybrid pump that benefits from the advantages of mechanical and electric systems, and evaluates a prototype as proof-of-concept. Cyclical bench testing of the hybrid pump mechanical system was performed using a materials testing system to assess the relationship between compression cycles and vacuum pressure. Phase 1 in vivo testing of the hybrid pump was performed by an able-bodied individual using prosthesis simulator boots walking on a treadmill, and phase 2 involved an above-knee prosthesis user walking with the hybrid pump and a commercial electric pump for comparison. Bench testing of 300 compression cycles produced a maximum vacuum of 24 in-Hg. In vivo testing demonstrated that the hybrid pump continued to pull vacuum during walking, and as opposed to the commercial electric pump, did not require reactivation of the electric system during phase 2 testing. The novelty of the hybrid pump is that while the electric system provides rapid, initial vacuum suspension, the mechanical system provides continuous air evacuation while walking to maintain suspension without reactivation of the electric system, thereby allowing battery power to be reserved for monitoring vacuum levels.

NMR and Chemometric Characterization of Vacuum Residues and Vacuum Gas Oils from Crude Oils of Different Origin

Directory of Open Access Journals (Sweden)

Jelena Parlov Vuković

2015-03-01

Full Text Available NMR spectroscopy in combination with statistical methods was used to study vacuum residues and vacuum gas oils from 32 crude oils of different origin. Two chemometric metodes were applied. Firstly, principal component analysis on complete spectra was used to perform classification of samples and clear distinction between vacuum residues and vacuum light and heavy gas oils were obtained. To quantitatively predict the composition of asphaltenes, principal component regression models using areas of resonance signals spaned by 11 frequency bins of the 1H NMR spectra were build. The first 5 principal components accounted for more than 94 % of variations in the input data set and coefficient of determination for correlation between measured and predicted values was R2 = 0.7421. Although this value is not significant, it shows the underlying linear dependence in the data. Pseudo two-dimensional DOSY NMR experiments were used to assess the composition and structural properties of asphaltenes in a selected crude oil and its vacuum residue on the basis of their different hydrodynamic behavior and translational diffusion coefficients. DOSY spectra showed the presence of several asphaltene aggregates differing in size and interactions they formed. The obtained results have shown that NMR techniques in combination with chemometrics are very useful to analyze vacuum residues and vacuum gas oils. Furthermore, we expect that our ongoing investigation of asphaltenes from crude oils of different origin will elucidate in more details composition, structure and properties of these complex molecular systems.

Topology of classical vacuum space-time

International Nuclear Information System (INIS)

Cho, Y.M.

2007-04-01

We present a topological classification of classical vacuum space-time. Assuming the 3-dimensional space allows a global chart, we show that the static vacuum space-time of Einstein's theory can be classified by the knot topology π 3 (S 3 ) = π 3 (S 2 ). Viewing Einstein's theory as a gauge theory of Lorentz group and identifying the gravitational connection as the gauge potential of Lorentz group, we construct all possible vacuum gravitational connections which give a vanishing curvature tensor. With this we show that the vacuum connection has the knot topology, the same topology which describes the multiple vacua of SU(2) gauge theory. We discuss the physical implications of our result in quantum gravity. (author)

Gravitational collapse and the vacuum energy

International Nuclear Information System (INIS)

Campos, M

2014-01-01

To explain the accelerated expansion of the universe, models with interacting dark components (dark energy and dark matter) have been considered recently in the literature. Generally, the dark energy component is physically interpreted as the vacuum energy of the all fields that fill the universe. As the other side of the same coin, the influence of the vacuum energy on the gravitational collapse is of great interest. We study such collapse adopting different parameterizations for the evolution of the vacuum energy. We discuss the homogeneous collapsing star fluid, that interacts with a vacuum energy component, using the stiff matter case as example. We conclude this work with a discussion of the Cahill-McVittie mass for the collapsed object.

Numerical study on the performance of vacuum cooler and evaporation-boiling phenomena during vacuum cooling of cooked meat

International Nuclear Information System (INIS)

Jin, T.X.; Xu, L.

2006-01-01

The vacuum cooling of cooked meats is described in this paper. Based on the energy and mass balance, a modified mathematical model based on a previous model is developed to analyze the performance of the vacuum cooler and the evaporation-boiling phenomena during vacuum cooling of cooked meat. Validation experimentation is performed in the designed vacuum cooler. Boiling occurs inside the cooked meat. There is a boiling front, and the boiling front moves toward the center of the cooked meat as the vacuum cooling proceeds. The experimental data are compared with the simulation results. It is found that the differences of the temperature between the simulation and the experimentation are within 5 deg. C, and the deviation of weight loss between the simulation and the experimentation is within 4%. The simulation results agree with the experimental data well. The modified model can be used to predict the variation of the vacuum pressure in the chamber, the temperature and pressure distributions and the weight loss profiles of cylindrical cooked meats

The HIE-ISOLDE Vacuum System

CERN Document Server

Vandoni, G; Radwan, K; Chiggiato, P

2014-01-01

The High Intensity and Energy Isolde (HIE-Isolde) project aims at increasing the energy and intensity of the radioactive ion beams (RIB) delivered by the present Rex-Isolde facility. Energy up to 10MeV/amu will be reached by a new post-accelerating, superconducting (SC) linac. Beam will be delivered via a HEBT to three experimental stations for nuclear physics. To keep the SC linac compact and avoid cold-warm transitions, the cryomodules feature a common beam and insulation vacuum. Radioactive ion beams require a hermetically sealed vacuum, with transfer of the effluents to the nuclear ventilation chimney. Hermetically sealed, dry, gas transfer vacuum pumps are preferred to gas binding pumps, for an optimized management of radioactive contamination risk during maintenance and intervention. The vacuum system of the SC-linac is isolated by two fast valves, triggered by fast reacting cold cathode gauges installed on the warm linac, the HEBT and the experimental stations. Rough pumping is distributed, while the H...

Particle creation during vacuum decay

International Nuclear Information System (INIS)

Rubakov, V.A.

1984-01-01

The hamiltonian approach is developed with regard to the problem of particle creation during the tunneling process, leading to the decay of the false vacuum in quantum field theory. It is shown that, to the lowest order in (h/2π), the particle creation is described by the euclidean Schroedinger equation in an external field of a bounce. A technique for solving this equation is developed in an analogy to the Bogoliubov transformation technique, in the theory of particle creation in the presence of classical background fields. The technique is illustrated by two examples, namely, the particle creation during homogeneous vacuum decay and during the tunneling process leading to the materialization of the thin-wall bubble of a new vacuum in the metastable one. The curious phenomenon of intensive particle annihilation during vacuum decay is discussed and explicitly illustrated within the former example. The non-unitary extension of the Bogoliubov u, v transformations is described in the appendix. (orig.)

Geochemistry of silicon isotopes

Energy Technology Data Exchange (ETDEWEB)

Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

2018-04-01

Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

Autoradiographic investigation of the removal of non-metallic inclusions in connection with the steel remelting process in vacuum furnaces

International Nuclear Information System (INIS)

Kolaski, H.; Siewierski, J.

1978-01-01

The labelled radioactive non-metallic inclusions in steel were obtained through deoxidation of steel with an activated aluminium alloy containing 1% rare earths. Quantity and distribution of the non-metallic inclusions in the steel were determined by applying autoradiography to the longitudinal and cross sections of the steel slabs. After remelting in an electronic furnace the distribution of non-metallic inclusions was determined by autoradiography of the lateral surfaces and the cross section of the slabs. It was found that 50 - 70% of the inclusions could be removed. The results obtained from autoradiographic investigation allow the exploration of the mechanism of the removal of inclusions. (author)

P3-approximation for gaseous media and vacuum

International Nuclear Information System (INIS)

Raevskaya, V.E.

1986-01-01

The problems connected with calculation of neutron field in a fuel assembly (FA) of a gas cooled reactor are discussed. The problem of P 3 -approximation applicability for the description of neutron fields in closed vacuum and gas volumes is considered. Under the assumption of the field azimuthal symmetry derived are the formulas for determination of the field in cylindrical vacuum layer of multizone FA as well as the solution for the cluster central zone, where the rods with vacuum between them are placed. Because of the finiteness of voids surrounded by medium it is possible to use the condition of neutron flux density continuity as the boundary conditions for the interface with vacuum. For representation of boundary conditions for rod surfaces and the cluster central zone with vacuum the addition theorems for the field in vacuum between the roads are derived. The formulas for mean neutron fluxes in vacuum cylindrical layer and in vacuum between rods are derived. The numerical calculations performed according to various programs confirmed the validity of the derived formulas

Progress in vacuum metal extraction, refining and consolidation

International Nuclear Information System (INIS)

Sundaram, C.V.; Mukherjee, T.K.; Sharma, B.P.

1973-01-01

The unique achievements in the process metallurgy of rare metals in the past quarter century should largely be attributed to advances in vacuum technology. New standards for high purity, increasing demand for pure metals and alloys for established applications, and steady improvement in sophistication and capacity of vacuum furnaces have provided the stimulus for developing and expanding vacuum metal extraction processes, and also exploring totally new processes. The paper discusses the thermochemistry of vacuum metallurgy, carbothermic and metallothermic reduction reactions, consolidation and refining by vacuum arc melting, electron beam melting and high temperature high vacuum sintering, and ultrapurification, with special reference to the reactive and refractory metals of Group IV to VI. (author)

Thermal Stability of Hi-Nicalon SiC Fiber in Nitrogen and Silicon Environments

Science.gov (United States)

Bhatt, R. T.; Garg, A.

1995-01-01

The room temperature tensile strength of uncoated and two types of pyrolytic boron nitride coated (PBN and Si-rich PBN) Hi-Nicalon SiC fibers was determined after 1 to 400 hr heat treatments to 1800 C under N2 pressures of 0.1, 2, and 4 MPa, and under 0.1 Mpa argon and vacuum environments. In addition, strength stability of both uncoated and coated fibers embedded in silicon powder and exposed to 0.1 MPa N2 for 24 hrs at temperatures to 1400 C was investigated. The uncoated and both types of BN coated fibers exposed to N2 for 1 hr showed noticeable strength degradation above 1400 C and 1600 C, respectively. The strength degradation appeared independent of nitrogen pressure, time of heat treatment, and surface coatings. TEM microstructural analysis suggests that flaws created due to SiC grain growth are responsible for the strength degradation. In contact with silicon powder, the uncoated and both types of PBN coated fibers degrade rapidly above 1350 C.

Identification by force modulation microscopy of nanoparticles generated in vacuum arcs Identification by force modulation microscopy of nanoparticles generated in vacuum arcs

Directory of Open Access Journals (Sweden)

M. Arroyave Franco

2006-06-01

Full Text Available An alternative method based on force modulation microscopy (FMM for identification of nanoparticles produced in the plasma generated by the cathode spots of vacuum arcs is presented. FMM technique is enabled for the detection of variations in the mechanical properties of a surface with high sensitiveness. Titanium nitride (TiN coatings deposited on oriented silicon by pulsed vacuum arc process have been analyzed. AFM (Atomic Force Microscopy and FMM images were simultaneously obtained, and in all cases it was possible to identify nanoparticle presence. Further X-ray Diffraction spectra of sample coating were taken. Existence of contaminant particles of 47 nanometers in diameter was reported.En este trabajo se presenta un método alternativo basado en microscopia de modulación de fuerza (FMM, para la identificación de nanogotas producidas en el plasma generado por los spots catódicos de los arcos en vacío. La técnica FMM esta habilitada para la detección de variaciones en las propiedades mecánicas de una superficie, con alta sensibilidad. Se han analizado recubrimientos de nitruro de titanio (TiN depositados sobre Silicio orientado por el proceso de arco en vacío pulsado. Se han obtenido simultáneamente imágenes de microscopia de fuerza atómica (AFM y de microscopia FMM mediante las cuales se ha podido identificar la presencia de nanogotas. Adicionalmente se han tomado espectros de difracción de rayos X (XRD de las muestras recubiertas. Se ha reportado la existencia de partículas contaminantes de 47 nanómetros de diámetro sobre los recubrimientos.

Vacuum Energy and Inflation: 4. An Inflationary Universe

Science.gov (United States)

Huggins, Elisha

2013-01-01

This is the fourth paper in a series of four. The first paper in the series, "Vacuum Energy and Inflation: 1. A Liter of Vacuum Energy" [EJ1024183] discusses an example of vacuum energy. Vacuum energy is explained as an energy with a negative pressure whose energy density remains constant in an expanding space. Paper 2, "Vacuum…

Spiral patterns of gold nanoclusters in silicon (100) produced by metal vapour vacuum arc implantation of gold ions

International Nuclear Information System (INIS)

Venkatachalam, Dinesh Kumar; Sood, Dinesh Kumar; Bhargava, Suresh Kumar

2008-01-01

Self-assembled gold nanoclusters are attractive building blocks for future nanoscale sensors and optical devices due to their exciting catalytic properties. In this work, we report direct bottom-up synthesis of spiral patterns of gold nanoclusters in silicon (100) substrates by Au ion implantation followed by thermal annealing. This unique phenomenon is observed only above a critical threshold implantation dose and annealing temperature. Systematic study by electron microscopy, analytical x-ray diffraction and atomic force microscopy shows the temperature- and time-dependent nucleation, growth of Au nanoclusters and evolution of the spiral patterns. The observed patterns of gold nanoclusters bear a resemblance to the spiral growth prevalent in some directionally solidified eutectic alloys. Based on this systematic study of the growth and morphology of nanoclusters, a tentative model has been proposed for the formation mechanism of this unusual self-assembled pattern in an amorphous Si/Au system. This model shows that melting of the implanted layer is essential and without which no spiral patterns are observed. A better understanding of this self-assembly process will open up new ways to fabricate ordered arrays of gold nanoclusters in silicon substrates for seeding selective growth of one-dimensional nanostructures

21 CFR 884.5070 - Vacuum abortion system.

Science.gov (United States)

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Vacuum abortion system. 884.5070 Section 884.5070 Food and Drugs FOOD AND DRUG ADMINISTRATION, DEPARTMENT OF HEALTH AND HUMAN SERVICES (CONTINUED... § 884.5070 Vacuum abortion system. (a) Identification. A vacuum abortion system is a device designed to...

Vacuum compatibility of 3D-printed materials

OpenAIRE

Povilus, AP; Wurden, CJ; Vendeiro, Z; Baquero-Ruiz, M; Fajans, J

2014-01-01

The fabrication fidelity and vacuum properties are tested for currently available 3D-printed materials including polyamide, glass, acrylic, and sterling silver. The silver was the only material found to be suitable to ultrahigh vacuum environments due to outgassing and sublimation observed in other materials. © 2014 American Vacuum Society.

Ultra high vacuum technology

CERN Multimedia

CERN. Geneva

2001-01-01

A short introduction for some basic facts and equations. Subsquently, discussion about: Building blocks of an ultrahigh vacuum system - Various types of pumps required to reach uhv and methods to reduce these effects - Outgassing phenomena induced by the presence of a particle beam and the most common methods to reduce these effects It will be given some practical examples from existing CERN accelerators and discuss the novel features of the future LHC vacuum system.

A Planck Vacuum Cosmology

Directory of Open Access Journals (Sweden)

Daywitt W. C.

2009-04-01

Full Text Available Both the big-bang and the quasi-steady-state cosmologies originate in some type of Planck state. This paper presents a new cosmological theory based on the Planck- vacuum negative-energy state, a state consisting of a degenerate collection of negative- energy Planck particles. A heuristic look at the Einstein field equation provides a con- vincing argument that such a vacuum state could provide a theoretical explanation for the visible universe.

The localized quantum vacuum field

International Nuclear Information System (INIS)

Dragoman, D

2008-01-01

A model for the localized quantum vacuum is proposed in which the zero-point energy (ZPE) of the quantum electromagnetic field originates in energy- and momentum-conserving transitions of material systems from their ground state to an unstable state with negative energy. These transitions are accompanied by emissions and re-absorptions of real photons, which generate a localized quantum vacuum in the neighborhood of material systems. The model could help resolve the cosmological paradox associated with the ZPE of electromagnetic fields, while reclaiming quantum effects associated with quantum vacuum such as the Casimir effect and the Lamb shift. It also offers a new insight into the Zitterbewegung of material particles

The localized quantum vacuum field

Energy Technology Data Exchange (ETDEWEB)

Dragoman, D [Physics Department, University of Bucharest, PO Box MG-11, 077125 Bucharest (Romania)], E-mail: danieladragoman@yahoo.com

2008-03-15

A model for the localized quantum vacuum is proposed in which the zero-point energy (ZPE) of the quantum electromagnetic field originates in energy- and momentum-conserving transitions of material systems from their ground state to an unstable state with negative energy. These transitions are accompanied by emissions and re-absorptions of real photons, which generate a localized quantum vacuum in the neighborhood of material systems. The model could help resolve the cosmological paradox associated with the ZPE of electromagnetic fields, while reclaiming quantum effects associated with quantum vacuum such as the Casimir effect and the Lamb shift. It also offers a new insight into the Zitterbewegung of material particles.

Experimental tests of vacuum energy

CERN Multimedia

CERN. Geneva

2015-01-01

While the current vacuum energy of the Universe is very small, in our standard cosmological picture it has been much larger at earlier epochs. We try to address the question of what are possible ways to try to experimentally verify this. One direction is to look for systems where vacuum energy constitutes a non-negligible fraction of the total energy, and study the properties of those. Another possibility is to focus on the epochs around cosmic phase transitions, when the vacuum energy is of the same order as the total energy. Along these lines we investigate properties of neutron stars and the imprint of phase transitions on primordial gravitational waves.

Amorphous NEA Silicon Photocathodes - A Robust RF Gun Electron Source. Final Report

International Nuclear Information System (INIS)

Mulhollan, Gregory A.

2009-01-01

Amorphous silicon (a-Si) has been shown to have great promise as a negative electron affinity visible wavelength photocathode suitable for radio frequency (RF) gun systems. The specific operating wavelength can be shifted by growing it as a germanium alloy (a-Si(1-x)Ge(x)) rather than as pure silicon. This class of photoemitters has been shown to possess a high degree of immunity to charged particle flux. Such particle flux can be a significant problem in the operation of other photocathodes in RF gun systems. Its emission characteristics in the form of current per unit area, or current density, and emission angle, or beam spread are well matched for use in RF guns. Photocathodes made of a-Si can be fabricated on a variety of substrates including those most commonly employed in RF gun systems. Such photocathodes can be made for operation in either transmission or reflection mode. By growing them utilizing radio frequency plasma enhanced chemical vapor deposition, the unit cost is quite low, the quality is high and it is straightforward to grow custom size substrates and full or limited regions to confine the electron emission to the desired area. Quality emitters have been fabricated on tantalum, molybdenum, tungsten, titanium, copper, stainless steel, float glass, borosilicate glass and gallium arsenide. In addition to performing well in dedicated test chambers, a-Si photocathodes have been shown to function well in self-contained vacuum tubes. In this employment, they are subjected to a strenuous environment. Successful operation in this configuration provides additional confidence in their application to high energy linac photoinjectors and potentially as part of reliable, low cost photocathode driven RF gun systems that could become ready replacements for the diode and triode guns used on medical accelerators. Their applications in stand-alone vacuum tubes is just beginning to be explored.

Vacuum Technology for Superconducting Devices

Energy Technology Data Exchange (ETDEWEB)

Chiggiato, P [European Organization for Nuclear Research, Geneva (Switzerland)

2014-07-01

The basic notions of vacuum technology for superconducting applications are presented, with an emphasis on mass and heat transport in free molecular regimes. The working principles and practical details of turbomolecular pumps and cryopumps are introduced. The specific case of the Large Hadron Collider’s cryogenic vacuum system is briefly reviewed.

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Compressed Air/Vacuum Transportation Techniques

Science.gov (United States)

Guha, Shyamal

2011-03-01

General theory of compressed air/vacuum transportation will be presented. In this transportation, a vehicle (such as an automobile or a rail car) is powered either by compressed air or by air at near vacuum pressure. Four version of such transportation is feasible. In all versions, a ``c-shaped'' plastic or ceramic pipe lies buried a few inches under the ground surface. This pipe carries compressed air or air at near vacuum pressure. In type I transportation, a vehicle draws compressed air (or vacuum) from this buried pipe. Using turbine or reciprocating air cylinder, mechanical power is generated from compressed air (or from vacuum). This mechanical power transferred to the wheels of an automobile (or a rail car) drives the vehicle. In type II-IV transportation techniques, a horizontal force is generated inside the plastic (or ceramic) pipe. A set of vertical and horizontal steel bars is used to transmit this force to the automobile on the road (or to a rail car on rail track). The proposed transportation system has following merits: virtually accident free; highly energy efficient; pollution free and it will not contribute to carbon dioxide emission. Some developmental work on this transportation will be needed before it can be used by the traveling public. The entire transportation system could be computer controlled.

Rising hopes for vacuum tube collectors

Energy Technology Data Exchange (ETDEWEB)

Godolphin, D.

1982-06-01

The performance, feasibility and use of vacuum tube solar collectors for domestic hot water (DHW) systems are discussed. An introduction to the design of vacuum tube collectors is presented and comparisons are made with flat plate collectors in terms of effectiveness in DHW applications and cost. The use of vacuum tube collectors is well established for high temperature use such as process heat and absorption cooling applications; there is considerable debate concerning their use in DHW and these arguments are presented. It is pointed out that the accepted standardized comparison test (ASHRAE 93-77) is apparently biased towards the flat plate collectors in direct comparisons of collector efficiencies. Recent developments among manufacturers with regard to vacuum tube collectors and their thinking (pro and con) are discussed in some detail. Breakage and other problems are pointed out although advocates look ahead to lower costs, higher efficiencies, and broader markets (particularly in DHW). It is concluded by some that flat plate collector technology has reached its peak and that vacuum tube collectors will be very prominent in the future. (MJJ)

Recycling of rare earth magnet scraps: Carbon and oxygen removal from Nd magnet scraps

International Nuclear Information System (INIS)

Saguchi, A.; Asabe, K.; Fukuda, T.; Takahashi, W.; Suzuki, R.O.

2006-01-01

The decarburization and deoxidation technique for permanent Nd-Fe-B magnet scrap is investigated. The carbon and oxygen contamination damage the magnetic properties. The carbon content decreased less than 0.001% by heating in air. The two stage deoxidation is applied, iron oxides are reduced by heating in hydrogen thereafter rare earth oxides are removed by Ca-reduction and leaching. The appropriate conditions for deoxidation in the Ca-reduction and suppressing the re-oxidation in the leaching are investigated. The heating pattern in Ca-reduction and the leaching condition for the mixture composed of Ca compounds and Nd-Fe-B alloy powder greatly affects the oxygen content of recycled material. The decarburized and deoxidized Nd-Fe-B magnet scrap can be recycled as alloying elements by melting

[Ambulant treatment of wounds by vacuum sealing].

Science.gov (United States)

Ziegler, U E; Schmidt, K; Breithaupt, B; Menig, R; Debus, E S; Thiede, A

2000-01-01

The treatment of chronic wounds by vacuum sealing as an outpatient procedure is a new method of wound conditioning before closing the defect. The quality of life for the patient in his usual surrounding is maintained. Financial aspects also play a role in this treatment since costs for the health care system can be reduced. Various vacuum pumps, drainages and polymere foams are available and suitable for the outpatient treatment. The most important condition is to regularly check the vacuum. This can performed by the patient, the relatives or nursing staff. The main complication consists in loss of vacuum but technical and local or systemic complications can also appear. Individually applied vacuum dressings (polyvinyl foam, drainage tube and polymere foil) are practical. The ideal pump systems for the outpatient treatment are still not trial.

Vacuum chamber-free centrifuge with magnetic bearings.

Science.gov (United States)

Park, Cheol Hoon; Kim, Soohyun; Kim, Kyung-Soo

2013-09-01

Centrifuges are devices that separate particles of different densities and sizes through the application of a centrifugal force. If a centrifuge could be operated under atmospheric conditions, all vacuum-related components such as the vacuum chamber, vacuum pump, diffusion pump, and sealing could be removed from a conventional centrifuge system. The design and manufacturing procedure for centrifuges could then be greatly simplified to facilitate the production of lightweight centrifuge systems of smaller volume. Furthermore, the maintenance costs incurred owing to wear and tear due to conventional ball bearings would be eliminated. In this study, we describe a novel vacuum chamber-free centrifuge supported by magnetic bearings. We demonstrate the feasibility of the vacuum chamber-free centrifuge by presenting experimental results that verify its high-speed support capability and motoring power capacity.

Manufacture of superhigh vacuum testing tank

International Nuclear Information System (INIS)

Sakai, Kusuo; Suzui, Koichi; Horigome, Toshio

1981-01-01

This apparatus is one of the preliminary experiment equipments for the vacuum system of a UVSOR, and the main objective is to obtain the clean vacuum below 10 - 10 Torr. From the viewpoint of manufacture, there is no problem, but all the works from the design through manufacture, assembling and adjustment of the apparatus, to the obtaining of required vacuum were carried out by the authors themselves. The design and its points, and manufacture are described. In order to obtain clean vacuum and maintain it for long period, the surface cleaning of vacuum tanks is very important. Therefore the method of electrolytic polishing was adopted for the purpose, and its effectiveness was examined. After the surface treatment by two methods, the evacuation test was carried out, and the attained pressure was compared. Electrolytic polishing seemed to be effective. As the method of suppressing surface degasification, there is argon bombardment method. It was attempted to improve the pressure attained by baking only further by this method. By baking at 250 deg C for 30 hr only, the final pressure attained was 1.7 x 10 - 10 Torr, and by making argon bombardment twice during baking, it was 0.9 x 10 - 10 Torr, thus slight improvement was obtained. The main objective to obtain vacuum below 10 - 10 Torr was accomplished, but surface treatment requires more experience. (Kako, I.)

Vacuum strings in FRW models

Energy Technology Data Exchange (ETDEWEB)

Dyer, C C; Oattes, L M; Starkman, G D

1988-01-01

The authors find that vacuum string solutions cannot be embedded in an FRW model in the spirit of the swiss cheese model for inhomogeneities. Since all standard lensing calculations rely implicitly on the Swiss Cheese model, this result indicates that the previous lensing results for the vacuum string may be in error.

Procurement specification high vacuum test chamber and pumping system

International Nuclear Information System (INIS)

1976-01-01

The specification establishes requirements for a high-vacuum test chamber, associated vacuum pumps, valves, controls, and instrumentation that shall be designed and fabricated for use as a test chamber for testing a closed loop Brayton Isotope Power System (BIPS) Ground Demonstration System (GDS). The vacuum system shall include all instrumentation required for pressure measurement and control of the vacuum pumping system. A general outline of the BIPS-GDS in the vacuum chamber and the preliminary piping and instrumentation interface to the vacuum chamber are shown

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

The Effect of Rare-Earth Metals on Cast Steels

Science.gov (United States)

1954-04-01

sullide inclusions found in two afuminum-Jriffed steefs treated with fire pounds of misch metal per ton of steef (SOOX) 15 manganese sulfides and...deoxidation treatment by ad- ditions in the monorail ladle were better than those not given the secondary deoxidation treatment. The aluminum analyses...Suliur Addition lb/ton Place BHN Area % it-lbs It-lbs Content Regular Secondary Deoxidation (0.028%Ca as CaMnSi + o.ossy.Ai) Added to 300 lb. Monorail

Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.

1994-01-01

Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

ELETTRA vacuum system

International Nuclear Information System (INIS)

Bernardini, M.; Daclon, F.; Giacuzzo, F.; Miertusova, J.; Pradal, F.; Kersevan, R.

1993-01-01

Elettra is a third-generation synchrotron light source which is being built especially for the use of high brilliance radiation from insertion devices and bending magnets. The UHV conditions in a storage ring lead to a longer beam lifetime - one of the most important criterion. The Elettra vacuum system presents some pecularities which cannot be found in any already existing machine. The final version of bending magnet vacuum chamber is presented. After chemical and thermal conditioning the specific outgassing rate of about 1.5e-12 Torr. liters sec -1 cm -2 was obtained. A microprocessor-controlled system has been developed to perform bake-out at the uniform temperature. The etched-foil type heaters are glued to the chamber and Microtherm insulation is used. UHV pumps based on standard triode sputter-ion pumps were modified with ST 707 NEG (Non Evaporable Getter) modules. A special installation enables the resistive activation of getters and significantly increases pumping speed for hydrogen and other residual gases (except methane and argon). All these technological innovations improve vacuum conditions in Elettra storage ring and consequently also the other parameters of the light source

Fabrication of wear-resistant silicon microprobe tips for high-speed surface roughness scanning devices

Science.gov (United States)

Wasisto, Hutomo Suryo; Yu, Feng; Doering, Lutz; Völlmeke, Stefan; Brand, Uwe; Bakin, Andrey; Waag, Andreas; Peiner, Erwin

2015-05-01

Silicon microprobe tips are fabricated and integrated with piezoresistive cantilever sensors for high-speed surface roughness scanning systems. The fabrication steps of the high-aspect-ratio silicon microprobe tips were started with photolithography and wet etching of potassium hydroxide (KOH) resulting in crystal-dependent micropyramids. Subsequently, thin conformal wear-resistant layer coating of aluminum oxide (Al2O3) was demonstrated on the backside of the piezoresistive cantilever free end using atomic layer deposition (ALD) method in a binary reaction sequence with a low thermal process and precursors of trimethyl aluminum and water. The deposited Al2O3 layer had a thickness of 14 nm. The captured atomic force microscopy (AFM) image exhibits a root mean square deviation of 0.65 nm confirming the deposited Al2O3 surface quality. Furthermore, vacuum-evaporated 30-nm/200-nm-thick Au/Cr layers were patterned by lift-off and served as an etch mask for Al2O3 wet etching and in ICP cryogenic dry etching. By using SF6/O2 plasma during inductively coupled plasma (ICP) cryogenic dry etching, micropillar tips were obtained. From the preliminary friction and wear data, the developed silicon cantilever sensor has been successfully used in 100 fast measurements of 5- mm-long standard artifact surface with a speed of 15 mm/s and forces of 60-100 μN. Moreover, the results yielded by the fabricated silicon cantilever sensor are in very good agreement with those of calibrated profilometer. These tactile sensors are targeted for use in high-aspect-ratio microform metrology.

Performance evaluation on vacuum pumps using nanolubricants

Energy Technology Data Exchange (ETDEWEB)

Lue, Yeou Feng; Hsu, Yu Chun; Teng, Tun Ping [Dept. of Industrial EducationNational Taiwan Normal University, Taiwan (China)

2016-09-15

This study produced alumina (Al{sub 2}O{sub 3}) nanovacuum-pump lubricants (NVALs) by involving the dispersion of Al{sub 2}O{sub 3} nanoparticles in a vacuum-pump lubricant (VAL) with oleic as a dispersant. Experiments were conducted to evaluate the suspension performance, thermal conductivity, viscosity, specific heat, tribological performance and vacuum-pump performance of the NVALs. The experimental results obtained from the vacuum-pump performance tests show that the NVALs with Al{sub 2}O{sub 3} concentration of 0.2 wt.% and oleic concentration of 0.025 wt.% yielded the lowest electricity consumption, conserving 2.39% of electricity compared with the VAL. No marked difference was observed between the temperatures of the vacuum pump using VAL and NVAL. Furthermore, evacuation (i.e., the minimal pressure of -99.5 kPa) was reached faster by the vacuum pump with the NVALs, and the evacuation time could be reduced by 4.91% under optimal conditions. In addition, the vacuum pump with the NVALs exhibited superior overall effectiveness under relatively lower ambient temperatures.

Vacuum leak test technique of JT-60

International Nuclear Information System (INIS)

Kaminaga, Atsushi; Arai, Takashi; Kodama, Kozo; Sasaki, Noboru; Saidoh, Masahiro

1998-01-01

Since a vacuum vessel of JT-60 is very large (167 m 3 ) and is combined with many components, such as magnetic coils, neutral beam injection systems and RF heating systems, etc., the position of leak testing exceeds 700. The two kind of techniques for vacuum leak test used in JT-60 has been described. Firstly the probe helium gas can be fed remotely in the three-dimensionally sectioned 54 regions of the JT-60 torus. The leak test was very rapidly performed by using this method. Secondly the helium detector system has been modified by the additional installation of the cryopump, which reduced the background level of the deuterium gas. The sensitivity of vacuum leak test with the cryopump was two orders of magnitude larger than that of without it. The examples of the performed vacuum leak test are stated. The vacuum leaks during experiments were 9 times. They were caused by thermal strain and plasma discharge. The vacuum leaks just after maintenance are 36 times which mainly caused by mis-installation. (author)

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Fluorescence and thermoluminescence in silicon oxide films rich in silicon

International Nuclear Information System (INIS)

Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

2009-10-01

In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

Development of high purity large forgings for nuclear power plants

International Nuclear Information System (INIS)

Tanaka, Yasuhiko; Sato, Ikuo

2011-01-01

The recent increase in the size of energy plants has been supported by the development of manufacturing technology for high purity large forgings for the key components of the plant. To assure the reliability and performance of the large forgings, refining technology to make high purity steels, casting technology for gigantic ingots, forging technology to homogenize the material and consolidate porosity are essential, together with the required heat treatment and machining technologies. To meet these needs, the double degassing method to reduce impurities, multi-pouring methods to cast the gigantic ingots, vacuum carbon deoxidization, the warm forging process and related technologies have been developed and further improved. Furthermore, melting facilities including vacuum induction melting and electro slag re-melting furnaces have been installed. By using these technologies and equipment, large forgings have been manufactured and shipped to customers. These technologies have also been applied to the manufacture of austenitic steel vessel components of the fast breeder reactors and components for fusion experiments.

Development of high purity large forgings for nuclear power plants

Science.gov (United States)

Tanaka, Yasuhiko; Sato, Ikuo

2011-10-01

The recent increase in the size of energy plants has been supported by the development of manufacturing technology for high purity large forgings for the key components of the plant. To assure the reliability and performance of the large forgings, refining technology to make high purity steels, casting technology for gigantic ingots, forging technology to homogenize the material and consolidate porosity are essential, together with the required heat treatment and machining technologies. To meet these needs, the double degassing method to reduce impurities, multi-pouring methods to cast the gigantic ingots, vacuum carbon deoxidization, the warm forging process and related technologies have been developed and further improved. Furthermore, melting facilities including vacuum induction melting and electro slag re-melting furnaces have been installed. By using these technologies and equipment, large forgings have been manufactured and shipped to customers. These technologies have also been applied to the manufacture of austenitic steel vessel components of the fast breeder reactors and components for fusion experiments.

Vacuum Exhaust Process in Pilot-Scale Vacuum Pressure Swing Adsorption for Coal Mine Ventilation Air Methane Enrichment

Directory of Open Access Journals (Sweden)

Xiong Yang

2018-04-01

Full Text Available Recovery and treatment of methane from coal mine ventilation air methane (VAM with cost-effective technologies have been an ongoing challenge due to low methane concentrations. In this study, a type of coconut shell-based active carbon was employed to enrich VAM with a three-bed vacuum pressure swing adsorption unit. A new vacuum exhaust step for the VPSA process was introduced. The results show that the vacuum exhaust step can increase the methane concentration of the product without changing adsorption and desorption pressure. Under laboratory conditions, the concentration of product increased from 0.4% to 0.69% as the vacuum exhaust ratio increased from 0 to 3.1 when the feed gas concentration was 0.2%. A 500 m³/h pilot-scale test system for VAM enrichment was built rendering good correlation with the laboratory results in terms of the vacuum exhaust step. By using a two-stage three-bed separation unit, the VAM was enriched from 0.2% to over 1.2%.

High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

Science.gov (United States)

Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

2015-01-01

A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

Design of the ZTH vacuum liner

International Nuclear Information System (INIS)

Prince, P.P.; Dike, R.S.

1987-01-01

The current status of the ZTh vacuum liner design is covered by this report. ZTH will be the first experiment to be installed in the CPRF (Confinement Physics Research Facility) at the Los Alamos National Laboratory and is scheduled to be operational at the rated current of 4 MA in 1992. The vacuum vessel has a 2.4m major radius and a 40 cm minor radius. Operating parameters which drive the vacuum vessel mechanical design include a 300 C bakeout temperature, an armour support system capable of withstanding 25 kV, a high toroidal resistance, 1250 kPa magnetic loading, a 10 minute cycle time, and high positional accuracy with respect to the conducting shell. The vacuum vessel design features which satisfy the operating parameters are defined

Vacuum Alignment with more Flavors

DEFF Research Database (Denmark)

Ryttov, Thomas

2014-01-01

We study the alignment of the vacuum in gauge theories with $N_f$ Dirac fermions transforming according to a complex representation of the gauge group. The alignment of the vacuum is produced by adding a small mass perturbation to the theory. We study in detail the $N_f=2,3$ and $4$ case. For $N_...

Buried oxide layer in silicon

Science.gov (United States)

Sadana, Devendra Kumar; Holland, Orin Wayne

2001-01-01

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Thermal radiative near field transport between vanadium dioxide and silicon oxide across the metal insulator transition

Energy Technology Data Exchange (ETDEWEB)

Menges, F.; Spieser, M.; Riel, H.; Gotsmann, B., E-mail: bgo@zurich.ibm.com [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Dittberner, M. [IBM Research-Zurich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Novotny, L. [Photonics Laboratory, ETH Zurich, 8093 Zurich (Switzerland); Passarello, D.; Parkin, S. S. P. [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States)

2016-04-25

The thermal radiative near field transport between vanadium dioxide and silicon oxide at submicron distances is expected to exhibit a strong dependence on the state of vanadium dioxide which undergoes a metal-insulator transition near room temperature. We report the measurement of near field thermal transport between a heated silicon oxide micro-sphere and a vanadium dioxide thin film on a titanium oxide (rutile) substrate. The temperatures of the 15 nm vanadium dioxide thin film varied to be below and above the metal-insulator-transition, and the sphere temperatures were varied in a range between 100 and 200 °C. The measurements were performed using a vacuum-based scanning thermal microscope with a cantilevered resistive thermal sensor. We observe a thermal conductivity per unit area between the sphere and the film with a distance dependence following a power law trend and a conductance contrast larger than 2 for the two different phase states of the film.

Filling the vacuum at LHCb

CERN Multimedia

Katarina Anthony

2013-01-01

Last month, the Vacuum, Surfaces and Coatings (VSC) group was tasked with an unusually delicate operation in the LHCb experiment cavern: removing the LHC beam pipe while keeping the sensitive Vertex Locator vacuum vessel (VELO) completely isolated from the action.   The VSC group seal off the VELO beam pipe with a flange. Image: Gloria Corti. LHCb’s VELO detector is one of the crown jewels of the experiment. With detector elements surrounded by a vacuum, it gets as close as 5 cm from the beam. Fantastic for physics, but difficult for all-important access. “Because of the sensitivity of the VELO detector and its proximity to the beam, the collaboration decided not to bake (see box) its portion of the beam pipe,” says Giulia Lanza (TE-VSC-LBV), the expert in charge of the beam vacuum operation. “Our group was therefore asked to remove the rest of the LHC beam pipe while keeping the VELO portion of the pipe completely isolated. This work...

Vacuum gauges

International Nuclear Information System (INIS)

Power, B.D.; Priestland, C.R.D.

1978-01-01

This invention relates to vacuum gauges, particularly of the type known as Penning gauges, which are cold cathode ionisation gauges, in which a magnetic field is used to lengthen the electron path and thereby increase the number of ions produced. (author)

Ion beam studied of silicon oxynitride and silicon nitroxide thin layers

International Nuclear Information System (INIS)

Oude Elferink, J.B.

1989-01-01

In this the processes occurring during high temperature treatments of silicon oxynitride and silicon oxide layers are described. Oxynitride layers with various atomic oxygen to nitrogen concentration ration (O/N) are considered. The high energy ion beam techniques Rutherford backscattering spectroscopy, elastic recoil detection and nuclear reaction analysis have been used to study the layer structures. A detailed discussion of these ion beam techniques is given. Numerical methods used to obtain quantitative data on elemental compositions and depth profiles are described. The electrical compositions and depth profiles are described. The electrical properties of silicon nitride films are known to be influenced by the behaviour of hydrogen in the film during high temperature anneling. Investigations of the behaviour of hydrogen are presented. Oxidation of silicon (oxy)nitride films in O 2 /H 2 0/HCl and nitridation of silicon dioxide films in NH 3 are considered since oxynitrides are applied as an oxidation mask in the LOCOS (Local oxidation of silicon) process. The nitridation of silicon oxide layers in an ammonia ambient is considered. The initial stage and the dependence on the oxide thickness of nitrogen and hydrogen incorporation are discussed. Finally, oxidation of silicon oxynitride layers and of silicon oxide layers are compared. (author). 76 refs.; 48 figs.; 1 tab

Maxwell electrodynamics subjected to quantum vacuum fluctuations

International Nuclear Information System (INIS)

Gevorkyan, A. S.; Gevorkyan, A. A.

2011-01-01

The propagation of electromagnetic waves in the vacuum is considered taking into account quantum fluctuations in the limits of Maxwell-Langevin (ML) equations. For a model of “white noise” fluctuations, using ML equations, a second order partial differential equation is found which describes the quantum distribution of virtual particles in vacuum. It is proved that in order to satisfy observed facts, the Lamb Shift etc, the virtual particles should be quantized in unperturbed vacuum. It is shown that the quantized virtual particles in toto (approximately 86 percent) are condensed on the “ground state” energy level. It is proved that the extension of Maxwell electrodynamics with inclusion of the vacuum quantum field fluctuations may be constructed on a 6D space-time continuum with a 2D compactified subspace. Their influence on the refraction indexes of vacuum is studied.

A new vacuum for loop quantum gravity

International Nuclear Information System (INIS)

Dittrich, Bianca; Geiller, Marc

2015-01-01

We construct a new vacuum and representation for loop quantum gravity. Because the new vacuum is based on BF theory, it is physical for (2+1)-dimensional gravity, and much closer to the spirit of spin foam quantization in general. To construct this new vacuum and the associated representation of quantum observables, we introduce a modified holonomy–flux algebra that is cylindrically consistent with respect to the notion of refinement by time evolution suggested in Dittrich and Steinhaus (2013 arXiv:1311.7565). This supports the proposal for a construction of the physical vacuum made in Dittrich and Steinhaus (2013 arXiv:1311.7565) and Dittrich (2012 New J. Phys. 14 123004), and for (3+1)-dimensional gravity. We expect that the vacuum introduced here will facilitate the extraction of large scale physics and cosmological predictions from loop quantum gravity. (fast track communication)

Detecting leaks in vacuum bags

Science.gov (United States)

Carlstrom, E. E.

1980-01-01

Small leaks in vacuum bag can be readily detected by eye, using simple chemical reaction: combination of ammonia and acetic acid vapors to produce cloudy white smoke. Technique has been successfully used to test seam integrity and to identify minute pinholes in vacuum bag used in assembly of ceramic-tile heat shield for Space Shuttle Orbiter.

Vacuum Technology for Ion Sources

International Nuclear Information System (INIS)

Chiggiato, P

2013-01-01

The basic notions of vacuum technology for ion sources are presented, with emphasis on pressure profile calculation and choice of pumping technique. A Monte Carlo code (Molflow+) for the evaluation of conductances and the vacuum-electrical analogy for the calculation of time-dependent pressure variations are introduced. The specific case of the Linac4 H - source is reviewed. (author)

The realm of the vacuum

International Nuclear Information System (INIS)

Buchholz, D.; Wanzenberg, R.

1992-01-01

The spacelike asymptotic structure of physical states in local quantum theory is analysed. It is shown that this structure can be described in terms of a vacuum state if the theory satisfies a condition of timelike asymptotic abelianess. Theories which violate this condition can have an involved asymptotic vacuum structure as is illustrated by a simple example. (orig.)

RELATION BETWEEN FUNCTION AND FORM IN VACUUM CLEANERS DESIGN

Directory of Open Access Journals (Sweden)

RADU Ștefan

2015-11-01

Full Text Available The paper analyses how robotic vacuum cleaner works, describing their cleaning capabilities and additional features. The paper illustrates advantages of using robotic vacuum cleaners that have intelligent programming and a vacuum cleaning system, the components of a robotic vacuum cleaner. The paper develops aspects concerning to create 2D scale models for the evaluation of specific features of the new components for a prototype robotic vacuum cleaner.

Silver endotaxy in silicon under various ambient conditions and their use as surface enhanced Raman spectroscopy substrates

International Nuclear Information System (INIS)

Juluri, R.R.; Ghosh, A.; Bhukta, A.; Sathyavathi, R.; Satyam, P.V.

2015-01-01

Search for reliable, robust and efficient substrates for surface enhanced Raman spectroscopy (SERS) leads to the growth of various shapes and nanostructures of noble metals, and in particular, Ag nanostructures for this purpose. Coherently embedded (also known as endotaxial) Ag nanostructures in silicon substrates can be made robust and reusable SERS substrates. In this paper, we show the possibility of the growth of Ag endotaxial structures in Si crystal during Ar and low-vacuum annealing conditions while this is absent in O 2 and ultra high vacuum (UHV) annealing conditions and along with their respective use as SERS substrates. Systems annealed under air-annealing and low-vacuum conditions were found to show larger enhancement factors (typically ≈ 5 × 10 5 in SERS measurement for 0.5 nM Crystal Violet (CV) molecule) while the systems prepared under UHV-annealing conditions (where no endotaxial Ag structures were formed) were found to be not effective as SERS substrates. Extensive electron microscopy, synchrotron X-ray diffraction and Rutherford backscattering spectrometry techniques were used to understand the structural aspects. - Highlights: • Various aspects on the growth of endotaxial Ag nanostructures are presented. • Optimum amount of oxygen is necessary for the growth of endotaxial structures. • Reaction of oxygen with GeOx and SiOx plays a crucial role. • Ag nanostructures prepared under UHV conditions show low SERS activity • SERS enhancement is better for low-vacuum and argon annealing conditions

Nonlinear silicon photonics

Science.gov (United States)

Tsia, Kevin K.; Jalali, Bahram

2010-05-01

An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

TFTR diagnostic vacuum controller

International Nuclear Information System (INIS)

Olsen, D.; Persons, R.

1981-01-01

The TFTR diagnostic vacuum controller (DVC) provides in conjunction with the Central Instrumentation Control and Data Acquisition System (CICADA), control and monitoring for the pumps, valves and gauges associated with each individual diagnostic vacuum system. There will be approximately 50 systems on TFTR. Two standard versions of the controller (A and B) wil be provided in order to meet the requirements of two diagnostic manifold arrangements. All pump and valve sequencing, as well as protection features, will be implemented by the controller

NO2 sensing properties of amorphous silicon films

International Nuclear Information System (INIS)

Georgieva, V; Gadjanova, V; Donkov, N; Stefanov, P; Sendova-Vassileva, M; Grechnikov, A

2012-01-01

The sensitivity to NO 2 was studied of amorphous silicon thin films obtained by e-beam evaporation. The process was carried out at an operational-mode vacuum of 1.5x10 -5 Torr at a deposition rate of 170 nm/min. The layer's structure was analyzed by Raman spectroscopy, while its composition was determined by X-ray photoemission spectroscopy (XPS). To estimate their sensitivity to NO 2 , the Si films were deposited on a 16-MHz quartz crystal microbalance (QCM) and the correlation was used between the QCM frequency variation and the mass-loading after exposure to NO 2 in concentrations from 10 ppm to 5000 ppm. A considerable sensitivity of the films was found in the interval 1000 ppm-2500 ppm NO 2 , leading to frequency shifts from 131 Hz to 208 Hz. The results obtained on the films' sorption properties can be applied to the development sensor elements.

Carbon nanotubes and nanofibers synthesized by CVD on nickel coatings deposited with a vacuum arc

Energy Technology Data Exchange (ETDEWEB)

Escobar, M. [LP and MC, Dep. de Fisica-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); DQIAQF-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); Giuliani, L. [INFIP, CONICET, Dep. de Fisica, FCEyN-UBA, Cdad. Univ. Pab.1, (1428), Buenos Aires (Argentina); Candal, R.J. [INQUIMAE-FCEyN-UBA, Cdad. Universitaria Pab.2, (1428), Buenos Aires (Argentina); Lamas, D.G. [CINSO, CITEFA, CONICET, J.B. de La Salle 4397, (1603) V.Martelli, Buenos Aires (Argentina); Caso, A. [LP and MC, Dep. de Fisica-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); Rubiolo, G. [LP and MC, Dep. de Fisica-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); UAM-CNEA, Av. Gral Paz 1499, (1650) San Martin, Buenos Aires (Argentina); Grondona, D. [INFIP, CONICET, Dep. de Fisica, FCEyN-UBA, Cdad. Univ. Pab.1, (1428), Buenos Aires (Argentina); Goyanes, S. [LP and MC, Dep. de Fisica-FCEyN-UBA, Cdad. Universitaria Pab.1, (1428), Buenos Aires (Argentina); Marquez, A., E-mail: amarquez@df.uba.a [INFIP, CONICET, Dep. de Fisica, FCEyN-UBA, Cdad. Univ. Pab.1, (1428), Buenos Aires (Argentina)

2010-04-16

Nanotubes and nanofibers were grown on Ni coatings deposited by plasma generated with a pulsed vacuum arc on silicon wafers using three different bias conditions: at floating potential (approximately +30 V respect to the grounded cathode); at ground potential; and at -60 V. An atomic force microscopy study showed that the Ni film morphology was affected by the bias condition of the substrate. The morphology of carbonaceous species depended on Ni-films characteristics. FE-SEM and TEM analyses have shown that nanofibers growth was favoured on Ni coatings deposited at -60 V whereas nanotubes grew mainly on Ni coatings obtained at floating and ground potentials. Hence, this new method to produce the precursor can be optimized to obtain nanotubes or nanofibers varying the substrate bias for the Ni deposition.

Simulations and Vacuum Tests of a CLIC Accelerating Structure

CERN Document Server

Garion, C

2011-01-01

The Compact LInear Collider, under study, is based on room temperature high gradient structures. The vacuum specificities of these cavities are low conductance, large surface areas and a non-baked system. The main issue is to reach UHV conditions (typically 10-7 Pa) in a system where the residual vacuum is driven by water outgassing. A finite element model based on an analogy thermal/vacuum has been built to estimate the vacuum profile in an accelerating structure. Vacuum tests are carried out in a dedicated set-up, the vacuum performances of different configurations are presented and compared with the predictions.

Liquid phase epitaxial growth of silicon on porous silicon for photovoltaic applications

International Nuclear Information System (INIS)

Berger, S.; Quoizola, S.; Fave, A.; Kaminski, A.; Perichon, S.; Barbier, D.; Laugier, A.

2001-01-01

The aim of this experiment is to grow a thin silicon layer ( 2 atmosphere, and finally LPE silicon growth with different temperature profiles in order to obtain a silicon layer on the sacrificial porous silicon (p-Si). We observed a pyramidal growth on the surface of the (100) porous silicon but the coalescence was difficult to obtain. However, on a p-Si (111) oriented wafer, homogeneous layers were obtained. (orig.)

Vacuum horizontal drainage for depressurization of uranium tailings

International Nuclear Information System (INIS)

Pakalnis, R.; Chedsey, G.; Robertson, A.M.; Follin, S.

1985-01-01

A recent advance in tailings slope depressurization is the application of vacuum assist horizontal drainage. Horizontal drains have been used for several decades to reduce water pressures in slopes in order to improve stability. The benefit from vacuum assist arises from an increased hydraulic gradient caused by induced negative atmospheric pressures. The vacuum assist system has, since its inception in 1982, been successfully employed at two soil and four rock slope projects located in Western Canada. This paper describes the first application of this system in the United States. The technical feasibility of employing vacuum assisted horizontal drains to depressurize a uranium tailings dam near Riverton, Wyoming has been evaluated. Two horizontal drains (300 ft.) were installed and their effect monitored by nine piezometers. The study was conducted over a three-week internal with vacuum being applied for three and four day periods. The drawdowns achieved through vacuum drainage was found to be approximately double that obtained by gravity alone. The volume of water exhausted under vacuum during the seven day interval was approximately double that obtained by gravity alone

Geometric accuracy of wax bade models manufactured in silicon moulds

Directory of Open Access Journals (Sweden)

G. Budzik

2010-01-01

Full Text Available The article presents the test results of the geometric accuracy of wax blade models manufactured in silicon moulds in the Rapid Tooling process, with the application of the Vacuum Casting technology. In batch production casting waxes are designed for the manufacture of models and components of model sets through injection into a metal die. The objective of the tests was to determine the possibility of using traditional wax for the production of casting models in the rapid prototyping process. Blade models made of five types of casting wax were measured. The definition of the geometric accuracy of wax blade models makes it possible to introduce individual modifications aimed at improving their shape in order to increase the dimensional accuracy of blade models manufactured in the rapid prototyping process.

Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

Science.gov (United States)

Schmid, F.; Khattak, C. P.

1978-01-01

Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

The effect of substrate bias on titanium carbide/amorphous carbon nanocomposite films deposited by filtered cathodic vacuum arc

International Nuclear Information System (INIS)

Zhang, Xu; Liang, Hong; Wu, Zhenglong; Wu, Xiangying; Zhang, Huixing

2013-01-01

The titanium carbide/amorphous carbon nanocomposite films have been deposited on silicon substrate by filtered cathodic vacuum arc (FCVA) technology, the effects of substrate bias on composition, structures and mechanical properties of the films are studied by scanning electron spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy and nano-indentation. The results show that the Ti content, deposition rate and hardness at first increase and then decrease with increasing the substrate bias. Maximum hardness of the titanium carbide/amorphous carbon nanocomposite film is 51 Gpa prepared at −400 V. The hardness enhancement may be attributed to the compressive stress and the fraction of crystalline TiC phase due to ion bombardment

Self-assisted GaAs nanowires with selectable number density on Silicon without oxide layer

International Nuclear Information System (INIS)

Bietti, S; Somaschini, C; Esposito, L; Sanguinetti, S; Frigeri, C; Fedorov, A; Geelhaar, L

2014-01-01

We present the growth of self-assisted GaAs nanowires (NWs) with selectable number density on bare Si(1 1 1), not covered by the silicon oxide. We determine the number density of the NWs by initially self-assembling GaAs islands on whose top a single NW is nucleated. The number density of the initial GaAs base islands can be tuned by droplet epitaxy and the same degree of control is then transferred to the NWs. This procedure is completely performed during a single growth in an ultra-high vacuum environment and requires neither an oxide layer covering the substrate, nor any pre-patterning technique. (paper)

Use of vacuum in processing of uranium

International Nuclear Information System (INIS)

Saify, M.T.; Rai, C.B.; Singh, S.P.; Singh, R.P.

2003-01-01

Full text: Natural uranium in the form of metal and alloys with suitable heat treatment are being used as fuel in research and some of the power reactors. The fuel is required to satisfy the purity specification from the criteria of neutron economy, corrosion resistance and fabricability. Uranium and its alloys fall under the category of reactive materials. They readily react with atmospheric air to form oxides. If molten uranium is exposed to atmosphere, it reacts violently with atmospheric gases and moisture, leading to explosion in extreme cases. Hence, protective inert atmosphere or high vacuum is required in processing of the materials especially during the melting and casting operation. Vacuum is preferred for melting and remelting of metals and alloys to remove the gaseous and high volatile impurities, to improve the mechanical properties of the material. Also, under vacuum sound castings are produced for further processing by mechanical working or use in casting forms. The addition of reactive alloying elements in uranium is efficiently carried out under vacuum. The paper highlights vacuum systems deployed and applications of vacuum in various operations involved in the processing of uranium and its alloys

Vacuum window glazings for energy-efficient buildings

Energy Technology Data Exchange (ETDEWEB)

Benson, D.K.; Smith, L.K.; Tracy, C.E.; Potter, T.; Christensen, C. (Solar Energy Research Inst., Golden, CO (USA)); Soule, D.E. (Western Illinois Univ., Macomb, IL (USA))

1990-05-01

The technical feasibility of a patented, laser-welded, evacuated insulating window was studied. The window has two edge-sealed sheets of glass separated by 0.5-mm glass spheres spaced 30 mm apart in a regular array. A highly insulating frame is required and several designs were analyzed. The vacuum window's combination of high solar transmittance and low thermal conductance makes it superior to many other windows in cold climates. In the US Pacific Northwest, the vacuum window could save about 6 MJ of heating energy annually per square meter of window in comparison to conventional, double-glazed windows. A large, vacuum laser-welding facility was designed and installed to conduct glass welding experiments and to fabricate full-sized vacuum windows. Experiments confirmed the feasibility of laser-sealing glass in vacuum but identified two difficulties. Under some circumstances, bubbles of dissolved gases form during welding and weaken the seal. Glass also vaporizes and contaminates the laser beam steering mirror. A novel moving metal foil mirror was developed to circumvent the contamination problem, but it has not yet been used to complete welding experiments and fabricate full-sized vacuum windows. 63 refs., 53 figs., 19 tabs.

Mechanics and Physics of Precise Vacuum Mechanisms

CERN Document Server

Deulin, E. A; Panfilov, Yu V; Nevshupa, R. A

2010-01-01

In this book the Russian expertise in the field of the design of precise vacuum mechanics is summarized. A wide range of physical applications of mechanism design in electronic, optical-electronic, chemical, and aerospace industries is presented in a comprehensible way. Topics treated include the method of microparticles flow regulation and its determination in vacuum equipment and mechanisms of electronics; precise mechanisms of nanoscale precision based on magnetic and electric rheology; precise harmonic rotary and not-coaxial nut-screw linear motion vacuum feedthroughs with technical parameters considered the best in the world; elastically deformed vacuum motion feedthroughs without friction couples usage; the computer system of vacuum mechanisms failure predicting. This English edition incorporates a number of features which should improve its usefulness as a textbook without changing the basic organization or the general philosophy of presentation of the subject matter of the original Russian work. Exper...

An electrostatic ion pump with nanostructured Si field emission electron source and Ti particle collectors for supporting an ultra-high vacuum in miniaturized atom interferometry systems

International Nuclear Information System (INIS)

Basu, Anirban; Velásquez-García, Luis F

2016-01-01

We report a field emission-based, magnetic-less ion pump architecture for helping maintain a high vacuum within a small chamber that is compatible with miniaturized cold-atom interferometry systems. A nanostructured silicon field emitter array, with each nano-sharp tip surrounded by a self-aligned proximal gate electrode, is used to generate a surplus of electrons that cause impact ionization of gas molecules. A two-stage cylindrical electron collector, made of titanium, is used to increase the travel distance of the electrons, augmenting the ionization probability; gas ionization is subsequently followed by gettering of the ions by a negatively charged, annular-shaped titanium electrode. A proof-of-concept pump prototype was characterized using a 25 cm 3 stainless steel vacuum chamber backed up by an external turbomolecular pump, a diaphragm pump, and a standard ion pump. Pumping action was observed with the electrostatic pump operating alone after an initial rapid rise of the chamber pressure due to electron/ion scrubbing. In addition, running the electrostatic pump in combination with the standard ion pump results in a lower vacuum level compared to the vacuum level produced by the standard ion pump acting alone. A proposed reduced-order model accurately predicts the functional dependence of the pressure versus time data and provides a good estimate of the characteristic pumping time constant inferred from the experiments. (paper)

Design and fabrication of a foldable 3D silicon based package for solid state lighting applications

International Nuclear Information System (INIS)

Sokolovskij, R; Liu, P; Van Zeijl, H W; Mimoun, B; Zhang, G Q

2015-01-01

Miniaturization of solid state lighting (SSL) luminaires as well as reduction of packaging and assembly costs are of prime interest for the SSL lighting industry. A novel silicon based LED package for lighting applications is presented in this paper. The proposed design consists of 5 rigid Si tiles connected by flexible polyimide hinges with embedded interconnects (ICs). Electrical, optical and thermal characteristics were taken into consideration during design. The fabrication process involved polyimide (PI) application and patterning, aluminium interconnect integration in the flexible hinge, LED reflector cavity formation and metalization followed by through wafer DRIE etching for chip formation and release. A method to connect chip front to backside without TSVs was also integrated into the process. Post-fabrication wafer level assembly included LED mounting and wirebond, phosphor-based colour conversion and silicone encapsulation. The package formation was finalized by vacuum assisted wrapping around an assembly structure to form a 3D geometry, which is beneficial for omnidirectional lighting. Bending tests were performed on the flexible ICs and optical performance at different temperatures was evaluated. It is suggested that 3D packages can be expanded to platforms for miniaturized luminaire applications by combining monolithic silicon integration and system-in-package (SiP) technologies. (paper)

Silicates materials of high vacuum technology

CERN Document Server

Espe, Werner

2013-01-01

Materials of High Vacuum Technology, Volume 2: Silicates covers silicate insulators of special importance to vacuum technology. The book discusses the manufacture, composition, and physical and chemical properties of technical glasses, quartz glass, quartzware, vycor glass, ceramic materials, mica, and asbestos.

Characteristics of the ISABELLE vacuum system

International Nuclear Information System (INIS)

Aggus, J.R.; Edwards, D. Jr.; Halama, H.J.; Herrera, J.C.

1977-01-01

A discussion is given of the complete vacuum system of ISABELLE, emphasizing those design characteristics dictated by high vacuum, the avoidance of beam current loss, and the reduction of background. The experimental and theoretical justifications for the design are presented

Compact vacuum insulation

Science.gov (United States)

Benson, D.K.; Potter, T.F.

1993-01-05

An ultra-thin compact vacuum insulation panel is comprised of two hard, but bendable metal wall sheets closely spaced apart from each other and welded around the edges to enclose a vacuum chamber. Glass or ceramic spacers hold the wall sheets apart. The spacers can be discrete spherical beads or monolithic sheets of glass or ceramic webs with nodules protruding therefrom to form essentially point'' or line'' contacts with the metal wall sheets. In the case of monolithic spacers that form line'' contacts, two such spacers with the line contacts running perpendicular to each other form effectively point'' contacts at the intersections. Corrugations accommodate bending and expansion, tubular insulated pipes and conduits, and preferred applications are also included.

Magnetically enhanced vacuum arc thruster

International Nuclear Information System (INIS)

Keidar, Michael; Schein, Jochen; Wilson, Kristi; Gerhan, Andrew; Au, Michael; Tang, Benjamin; Idzkowski, Luke; Krishnan, Mahadevan; Beilis, Isak I

2005-01-01

A hydrodynamic model of the vacuum arc thruster and its plume is described. Primarily an effect of the magnetic field on the plume expansion and plasma generation is considered. Two particular examples are investigated, namely the magnetically enhanced co-axial vacuum arc thruster (MVAT) and the vacuum arc thruster with ring electrodes (RVAT). It is found that the magnetic field significantly decreases the plasma plume radial expansion under typical conditions. Predicted plasma density profiles in the plume of the MVAT are compared with experimental profiles, and generally a good agreement is found. In the case of the RVAT the influence of the magnetic field leads to plasma jet deceleration, which explains the non-monotonic dependence of the ion current density, on an axial magnetic field observed experimentally

Magnetically enhanced vacuum arc thruster

Energy Technology Data Exchange (ETDEWEB)

Keidar, Michael [University of Michigan, Ann Arbor 48109 MI (United States); Schein, Jochen [Alameda Applied Science Corporation, San Leandro, CA 94577 (United States); Wilson, Kristi [Alameda Applied Science Corporation, San Leandro, CA 94577 (United States); Gerhan, Andrew [Alameda Applied Science Corporation, San Leandro, CA 94577 (United States); Au, Michael [Alameda Applied Science Corporation, San Leandro, CA 94577 (United States); Tang, Benjamin [Alameda Applied Science Corporation, San Leandro, CA 94577 (United States); Idzkowski, Luke [Alameda Applied Science Corporation, San Leandro, CA 94577 (United States); Krishnan, Mahadevan [Alameda Applied Science Corporation, San Leandro, CA 94577 (United States); Beilis, Isak I [Tel Aviv University, Tel Aviv (Israel)

2005-11-01

A hydrodynamic model of the vacuum arc thruster and its plume is described. Primarily an effect of the magnetic field on the plume expansion and plasma generation is considered. Two particular examples are investigated, namely the magnetically enhanced co-axial vacuum arc thruster (MVAT) and the vacuum arc thruster with ring electrodes (RVAT). It is found that the magnetic field significantly decreases the plasma plume radial expansion under typical conditions. Predicted plasma density profiles in the plume of the MVAT are compared with experimental profiles, and generally a good agreement is found. In the case of the RVAT the influence of the magnetic field leads to plasma jet deceleration, which explains the non-monotonic dependence of the ion current density, on an axial magnetic field observed experimentally.

Investigating steam penetration using thermometric methods in dental handpieces with narrow internal lumens during sterilizing processes with non-vacuum or vacuum processes.

Science.gov (United States)

Winter, S; Smith, A; Lappin, D; McDonagh, G; Kirk, B

2017-12-01

Dental handpieces are required to be sterilized between patient use. Vacuum steam sterilization processes with fractionated pre/post-vacuum phases or unique cycles for specified medical devices are required for hollow instruments with internal lumens to assure successful air removal. Entrapped air will compromise achievement of required sterilization conditions. Many countries and professional organizations still advocate non-vacuum sterilization processes for these devices. To investigate non-vacuum downward/gravity displacement, type-N steam sterilization of dental handpieces, using thermometric methods to measure time to achieve sterilization temperature at different handpiece locations. Measurements at different positions within air turbines were undertaken with thermocouples and data loggers. Two examples of widely used UK benchtop steam sterilizers were tested: a non-vacuum benchtop sterilizer (Little Sister 3; Eschmann, Lancing, UK) and a vacuum benchtop sterilizer (Lisa; W&H, Bürmoos, Austria). Each sterilizer cycle was completed with three handpieces and each cycle in triplicate. A total of 140 measurements inside dental handpiece lumens were recorded. The non-vacuum process failed (time range: 0-150 s) to reliably achieve sterilization temperatures within the time limit specified by the international standard (15 s equilibration time). The measurement point at the base of the handpiece failed in all test runs (N = 9) to meet the standard. No failures were detected with the vacuum steam sterilization type B process with fractionated pre-vacuum and post-vacuum phases. Non-vacuum downward/gravity displacement, type-N steam sterilization processes are unreliable in achieving sterilization conditions inside dental handpieces, and the base of the handpiece is the site most likely to fail. Copyright © 2017 The Healthcare Infection Society. Published by Elsevier Ltd. All rights reserved.

Silicon surface biofunctionalization with dopaminergic tetrahydroisoquinoline derivatives

Energy Technology Data Exchange (ETDEWEB)

Lucena-Serrano, A.; Lucena-Serrano, C.; Contreras-Cáceres, R.; Díaz, A.; Valpuesta, M. [Dep. Química Orgánica, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain); Cai, C. [Dep. Chemistry, University of Houston, Houston, TX 77204-5003 (United States); López-Romero, J.M., E-mail: jmromero@uma.es [Dep. Química Orgánica, Facultad de Ciencias, Universidad de Málaga, 29071 Málaga (Spain)

2016-01-01

Graphical abstract: - Highlights: • Two dopaminergic tetrahydroisoquinolines (THI) were synthesized. • Vinyl-terminated THI incorporated onto the H−Si(1 1 1) substrates via a hydrosilylation. • The highest yield in coverage was obtained in DMSO, at 4 h of irradiation and 0.1 mbar of vacuum. • Alkynyl-terminated Si surface was produced for incorporation of azide-THI by click reaction. • Best yields on grafted molecule were obtained by click reaction in absence of ascorbic acid. - Abstract: In this work we grafted vinyl- and azido-terminated tetrahydroisoquinolines (compounds 1 and 2, respectively) onto H−Si(1 1 1) silicon wafers obtaining highly stable modified surfaces. A double bond was incorporated into the tetrahydroisoquinoline structure of 1 to be immobilized by a light induced hydrosilylation reaction on hydrogen-terminated Si(1 1 1). The best results were obtained employing a polar solvent (DMSO), rather than a non-polar solvent (toluene). The azide derivative 2 was grafted onto alkenyl-terminated silicon substrates with copper-catalyzed azide-alkyne cycloaddition (CuAAC). Atomic force microscopy (AFM), contact angle goniometry (CA) and X-ray photoemission spectroscopy (XPS) were used to demonstrate the incorporation of 1 and 2 into the surfaces, study the morphology of the modified surfaces and to calculate the yield of grafting and surface coverage. CA measurements showed the increase in the surface hydrophobicity when 1 or 2 were incorporated into the surface. Moreover, compounds 1 and 2 were prepared starting from 1-(p-nitrophenyl)tetrahydroisoquinoline 3 under smooth conditions and in good yields. The structures of 1 and 2 were designed with a reduced A-ring, two substituents at positions C-6 and C-7, an N-methyl group and a phenyl moiety at C-1 in order to provide a high affinity against dopaminergic receptors. Moreover, O-demethylation of 1 was carried out once it was adsorbed onto the surface by treatment with BBr{sub 3}. The method

40 CFR 1065.644 - Vacuum-decay leak rate.

Science.gov (United States)

2010-07-01

... criterion specified in § 1065.345(e). ER06MY08.028 Where: V vac = geometric volume of the vacuum-side of the sampling system. R = molar gas constant. p 2 = Vacuum-side absolute pressure at time t2. T 2 = Vacuum-side...

Turbomolecular pump vacuum system for the Princeton Large Torus

International Nuclear Information System (INIS)

Dylla, H.F.

1977-10-01

A turbomolecular pump vacuum system has been designed and installed on the Princeton Large Torus (PLT). Four vertical shaft, oil-bearing, 1500 l/s turbomolecular pumps have been interfaced to the 6400 liter PLT Vacuum vessel to provide a net pumping speed of 3000 l/s for H 2 . The particular requirements and problems of tokamak vacuum systems are enumerated. A vacuum control system is described which protects the vacuum vessel from contamination, and protects the turbomolecular pumps from damage under a variety of possible failure modes. The performance of the vacuum system is presented in terms of pumping speed measurements and residual gas behavior

Feasibility study into the use of silicon photo-diodes for the alignment of collimated X-rays on the SRS

CERN Document Server

Buffey, S G

1999-01-01

Dynamic alignment of beam on the crystal during data collection was studied. Development of silicon photo-diode detectors for the vacuum ultraviolet and soft X-ray spectral regions has led to the use of such devices as beam alignment tools for Protein Crystallography beamlines on the Synchrotron Radiation Source at Daresbury. Quadrant photo-diodes are used to provide signals proportional to the number of photons hitting each photo-diode, these are amplified, digitised and then summed to give the x-y position of the beam centre. (author)

Nonlinear silicon photonics

Science.gov (United States)

Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

2017-09-01

Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

Transformational silicon electronics

KAUST Repository

Rojas, Jhonathan Prieto

2014-02-25

In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

Silicon Microspheres Photonics

International Nuclear Information System (INIS)

Serpenguzel, A.

2008-01-01

Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

Different ways of looking at the electromagnetic vacuum

International Nuclear Information System (INIS)

Milonni, P.W.

1987-01-01

Some thoughts on the electromagnetic vacuum are presented in connection with the vacuum and source fields as alternative physical bases for understanding spontaneous emission, the Lamb shift, Casimir effects, van der Waals forces, and the ''thermalization'' of vacuum fluctuations for a uniformly accelerated observer

Researches on Position Detection for Vacuum Switch Electrode

Science.gov (United States)

Dong, Huajun; Guo, Yingjie; Li, Jie; Kong, Yihan

2018-03-01

Form and transformation character of vacuum arc is important influencing factor on the vacuum switch performance, and the dynamic separations of electrode is the chief effecting factor on the transformation of vacuum arcs forms. Consequently, how to detect the position of electrode to calculate the separations in the arcs image is of great significance. However, gray level distribution of vacuum arcs image isn’t even, the gray level of burning arcs is high, but the gray level of electrode is low, meanwhile, the forms of vacuum arcs changes sharply, the problems above restrict electrode position detection precisely. In this paper, algorithm of detecting electrode position base on vacuum arcs image was proposed. The digital image processing technology was used in vacuum switch arcs image analysis, the upper edge and lower edge were detected respectively, then linear fitting was done using the result of edge detection, the fitting result was the position of electrode, thus, accurate position detection of electrode was realized. From the experimental results, we can see that: algorithm described in this paper detected upper and lower edge of arcs successfully and the position of electrode was obtained through calculation.

Construction and performance of silicon detectors for the small angle spectrometers of the collider detector of Fermilab

International Nuclear Information System (INIS)

Apollinari, G.; Bedeschi, F.; Bellettini, G.; Bosi, F.; Bosisio, L.; Cervelli, F.; Del Fabbro, R.; Dell'Orso, M.; Di Virgilio, A.; Focardi, E.; Giannetti, P.; Giorgi, M.; Menzione, A.; Ristori, L.; Scribano, A.; Sestini, P.; Stefanini, A.; Tonelli, G.; Zetti, F.; Bertolucci, S.; Cordelli, M.; Curatolo, M.; Dulach, B.; Esposito, B.; Giromini, P.; Miscetti, S.; Sansoni, A.

1987-01-01

The manufacturing process of a series of position sensitive silicon detectors is described together with the tests performed to optimize the performance of the detectors. The detectors are Schottky diodes with strips on the ohmic contact which allow to determine the position of the incoming ionizing particles by charge partition. Four detectors were assembled in a telescope and tested inside the vacuum pipe of the Tevatron Collider at Fermilab. The system is a prototype of the Small Angle Silicon Spectrometer, designed primarily to study p-anti p elastic and diffractive cross sections, and is a part of the Collider Detector of Fermilab (CDF). Several tests were performed to check the efficiency and the linearity of response of various regions of the detectors. Scans of the beam halo were also done in high and low β optics to check how close to the beam the detectors could be operated. Finally, the dependence of the detector response on temperature and integrated radiation dose was investigated. (orig.)

TORE SUPRA vacuum vessel and shield manufacturing

International Nuclear Information System (INIS)

Blateyron, J.; Lepez, R.

1984-01-01

TORE SUPRA vacuum vessel and vacuum chamber shield manufacturing in progress at Jeumont-Schneider consists of three main phases: - Detail engineering and manufacturing fixture construction; - Prototype section manufacturing and process preparation; - Construction of the 6 production modules. The welding techniques adopted, call for three special automatic processes: TIG, MIG and PLASMA welding which guarantee mechanical strength, vacuum tightness and absence of distortion. Production of the modules began July 1984. (author)

Advanced Photon Source accelerator ultrahigh vacuum guide

International Nuclear Information System (INIS)

Liu, C.; Noonan, J.

1994-03-01

In this document the authors summarize the following: (1) an overview of basic concepts of ultrahigh vacuum needed for the APS project, (2) a description of vacuum design and calculations for major parts of APS, including linac, linac waveguide, low energy undulator test line, positron accumulator ring (PAR), booster synchrotron ring, storage ring, and insertion devices, and (3) cleaning procedures of ultrahigh vacuum (UHV) components presently used at APS

Production of technical silicon and silicon carbide from rice-husk

Directory of Open Access Journals (Sweden)

A. Z. Issagulov

2014-10-01

Full Text Available In the article there are studied physical and chemical properties of silicon-carbonic raw material – rice-husk, thermophysical characteristics of the process of rice-husk pyrolysis in nonreactive and oxidizing environment; structure and phase composition of products of the rice-husk pyrolysis in interval of temperatures 150 – 850 °С and high temperature pyrolysis in interval of temperatures 900 – 1 500 °С. There are defined the silicon-carbon production conditions, which meet the requirements applicable to charging materials at production of technical silicon and silicon carbide.

Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

International Nuclear Information System (INIS)

Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

2012-01-01

Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

Baking of SST-1 vacuum vessel modules and sectors

International Nuclear Information System (INIS)

Pathan, Firozkhan S; Khan, Ziauddin; Yuvakiran, Paravastu; George, Siju; Ramesh, Gattu; Manthena, Himabindu; Shah, Virendrakumar; Raval, Dilip C; Thankey, Prashant L; Dhanani, Kalpesh R; Pradhan, Subrata

2012-01-01

SST-1 Tokamak is a steady state super-conducting tokamak for plasma discharge of 1000 sec duration. The plasma discharge of such long time duration can be obtained by reducing the impurities level, which will be possible only when SST-1 vacuum chamber is pumped to ultra high vacuum. In order to achieve UHV inside the chamber, the baking of complete vacuum chamber has to be carried out during pumping. For this purpose the C-channels are welded inside the vacuum vessel. During baking of vacuum vessel, these welded channels should be helium leak tight. Further, these U-channels will be in accessible under operational condition of SST-1. So, it will not possible to repair if any leak is developed during experiment. To avoid such circumstances, a dedicated high vacuum chamber is used for baking of the individual vacuum modules and sectors before assembly so that any fault during welding of the channels will be obtained and repaired. This paper represents the baking of vacuum vessel modules and sectors and their temperature distribution along the entire surface before assembly.

Performance improvement of silicon solar cells by nanoporous silicon coating

Directory of Open Access Journals (Sweden)

Dzhafarov T. D.

2012-04-01

Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

Vacuum production; Produccion de vacio

Energy Technology Data Exchange (ETDEWEB)

Segovia, J. L. de

2010-07-01

Since the advent of ultra high vacuum in 1958 has been a great demand for new as means of production and to meet the process needs to be done: industry heavy, high technology and space research areas, large accelerator systems particles or nuclear fusion. In this paper we explore the modern media production: dry vacuum pumps, turbo pumps, pump status diffusion ion pumps and cryopumps. (Author)

Reprogramming hMSCs morphology with silicon/porous silicon geometric micro-patterns.

Science.gov (United States)

Ynsa, M D; Dang, Z Y; Manso-Silvan, M; Song, J; Azimi, S; Wu, J F; Liang, H D; Torres-Costa, V; Punzon-Quijorna, E; Breese, M B H; Garcia-Ruiz, J P

2014-04-01

Geometric micro-patterned surfaces of silicon combined with porous silicon (Si/PSi) have been manufactured to study the behaviour of human Mesenchymal Stem Cells (hMSCs). These micro-patterns consist of regular silicon hexagons surrounded by spaced columns of silicon equilateral triangles separated by PSi. The results show that, at an early culture stage, the hMSCs resemble quiescent cells on the central hexagons with centered nuclei and actin/β-catenin and a microtubules network denoting cell adhesion. After 2 days, hMSCs adapted their morphology and cytoskeleton proteins from cell-cell dominant interactions at the center of the hexagonal surface. This was followed by an intermediate zone with some external actin fibres/β-catenin interactions and an outer zone where the dominant interactions are cell-silicon. Cells move into silicon columns to divide, migrate and communicate. Furthermore, results show that Runx2 and vitamin D receptors, both specific transcription factors for skeleton-derived cells, are expressed in cells grown on micropatterned silicon under all observed circumstances. On the other hand, non-phenotypic alterations are under cell growth and migration on Si/PSi substrates. The former consideration strongly supports the use of micro-patterned silicon surfaces to address pending questions about the mechanisms of human bone biogenesis/pathogenesis and the study of bone scaffolds.

Vacuum fusion of uranium

International Nuclear Information System (INIS)

Stohr, J.A.

1957-01-01

After having outlined that vacuum fusion and moulding of uranium and of its alloys have some technical and economic benefits (vacuum operations avoid uranium oxidation and result in some purification; precision moulding avoids machining, chip production and chemical reprocessing of these chips; direct production of the desired shape is possible by precision moulding), this report presents the uranium fusion unit (its low pressure enclosure and pumping device, the crucible-mould assembly, and the MF supply device). The author describes the different steps of cast production, and briefly comments the obtained results

Handbook of vacuum physics

CERN Document Server

1964-01-01

Handbook of Vacuum Physics, Volume 3: Technology is a handbook of vacuum physics, with emphasis on the properties of miscellaneous materials such as mica, oils, greases, waxes, and rubber. Accurate modern tables of physical constants, properties of materials, laboratory techniques, and properties of commercial pumps, gauges, and leak detectors are presented. This volume is comprised of 12 chapters and begins with a discussion on pump oils, divided into rotary pump oils and vapor pump oils. The next chapter deals with the properties and applications of greases, including outgassing and vapor pr

Bake-Out Mobile Controls for Large Vacuum Systems

CERN Document Server

Blanchard, S; Gomes, P; Pereira, H; Kopylov, L; Merker, S; Mikheev, M

2014-01-01

Large vacuum systems at CERN (Large Hadron Collider - LHC, Low Energy Ion Rings - LEIR...) require bake-out to achieve ultra-high vacuum specifications. The bake-out cycle is used to decrease the outgassing rate of the vacuum vessel and to activate the Non-Evaporable Getter (NEG) thin film. Bake-out control is a Proportional-Integral-Derivative (PID) regulation with complex recipes, interlocks and troubleshooting management and remote control. It is based on mobile Programmable Logic Controller (PLC) cabinets, fieldbus network and Supervisory Control and Data Acquisition (SCADA) application. The CERN vacuum installations include more than 7 km of baked vessels; using mobile cabinets reduces considerably the cost of the control system. The cabinets are installed close to the vacuum vessels during the time of the bake-out cycle. Mobile cabinets can be used in any of the CERN vacuum facilities. Remote control is provided through a fieldbus network and a SCADA application

Ultra-high vacuum technology for accelerators

CERN Multimedia

CERN. Geneva. Audiovisual Unit; Hilleret, Noël; Strubin, Pierre M

2002-01-01

The lectures will start with a review of the basics of vacuum physics required to build Ultra High Vacuum (UHV) systems, such as static and dynamic outgassing. Before reviewing the various pumping and measurement devices, including the most modern one like Non Evaporable Getter (NEG) coatings, an overview of adequate materials to be used in UHV systems will be given together with their treatment (e.g. cleaning procedures and bake out). Practical examples based on existing or future accelerators will be used to illustrate the topics. Finally, a short overview of modern vacuum controls and interlocks will be given.

Is the Free Vacuum Energy Infinite?

International Nuclear Information System (INIS)

Shirazi, S. M.; Razmi, H.

2015-01-01

Considering the fundamental cutoff applied by the uncertainty relations’ limit on virtual particles’ frequency in the quantum vacuum, it is shown that the vacuum energy density is proportional to the inverse of the fourth power of the dimensional distance of the space under consideration and thus the corresponding vacuum energy automatically regularized to zero value for an infinitely large free space. This can be used in regularizing a number of unwanted infinities that happen in the Casimir effect, the cosmological constant problem, and so on without using already known mathematical (not so reasonable) techniques and tricks

Quark virtuality and QCD vacuum condensates

International Nuclear Information System (INIS)

Zhou Lijuan; Ma Weixing

2004-01-01

Based on the Dyson-Schwinger equations (DSEs) in the 'rainbow' approximation, the authors investigate the quark virtuality in the vacuum state and quantum-chromodynamics (QCD) vacuum condensates. In particular, authors calculate the local quark vacuum condensate and quark-gluon mixed condensates, and then the virtuality of quark. The calculated quark virtualities are λ u,d 2 =0.7 GeV 2 for u, d quarks, and λ s 2 =1.6 GeV 2 for s quark. The theoretical predictions are consistent with empirical values used in QCD sum rules, and also fit to lattice QCD predictions

Study on structural properties of epitaxial silicon films on annealed double layer porous silicon

International Nuclear Information System (INIS)

Yue Zhihao; Shen Honglie; Cai Hong; Lv Hongjie; Liu Bin

2012-01-01

In this paper, epitaxial silicon films were grown on annealed double layer porous silicon by LPCVD. The evolvement of the double layer porous silicon before and after thermal annealing was investigated by scanning electron microscope. X-ray diffraction and Raman spectroscopy were used to investigate the structural properties of the epitaxial silicon thin films grown at different temperature and different pressure. The results show that the surface of the low-porosity layer becomes smooth and there are just few silicon-bridges connecting the porous layer and the substrate wafer. The qualities of the epitaxial silicon thin films become better along with increasing deposition temperature. All of the Raman peaks of silicon films with different deposition pressure are situated at 521 cm -1 under the deposition temperature of 1100 °C, and the Raman intensity of the silicon film deposited at 100 Pa is much closer to that of the monocrystalline silicon wafer. The epitaxial silicon films are all (4 0 0)-oriented and (4 0 0) peak of silicon film deposited at 100 Pa is more symmetric.

Vacuum pumping for controlled thermonuclear reactors

International Nuclear Information System (INIS)

Watson, J.S.; Fisher, P.W.

1976-01-01

Thermonuclear reactors impose unique vacuum pumping problems involving very high pumping speeds, handling of hazardous materials (tritium), extreme cleanliness requirements, and quantitative recovery of pumped materials. Two principal pumping systems are required for a fusion reactor, a main vacuum system for evacuating the torus and a vacuum system for removing unaccelerated deuterium from neutral beam injectors. The first system must pump hydrogen isotopes and helium while the neutral beam system can operate by pumping only hydrogen isotopes (perhaps only deuterium). The most promising pumping techniques for both systems appear to be cryopumps, but different cryopumping techniques can be considered for each system. The main vacuum system will have to include cryosorption pumps cooled to 4.2 0 K to pump helium, but the unburned deuterium-tritium and other impurities could be pumped with cryocondensation panels (4.2 0 K) or cryosorption panels at higher temperatures. Since pumping speeds will be limited by conductance through the ducts and thermal shields, the pumping performance for both systems will be similar, and other factors such as refrigeration costs are likely to determine the choice. The vacuum pumping system for neutral beam injectors probably will not need to pump helium, and either condensation or higher temperature sorption pumps can be used

The kinetics of dewetting ultra-thin Si layers from silicon dioxide

International Nuclear Information System (INIS)

Aouassa, M; Favre, L; Ronda, A; Berbezier, I; Maaref, H

2012-01-01

In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy E H ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t 0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h -1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving

Cosmological evolution of vacuum and cosmic acceleration

International Nuclear Information System (INIS)

Kaya, Ali

2010-01-01

It is known that the unregularized expressions for the stress-energy tensor components corresponding to subhorizon and superhorizon vacuum fluctuations of a massless scalar field in a Friedmann-Robertson-Walker background are characterized by the equation of state parameters ω = 1/3 and ω = -1/3, which are not sufficient to produce cosmological acceleration. However, the form of the adiabatically regularized finite stress-energy tensor turns out to be completely different. By using the fact that vacuum subhorizon modes evolve nearly adiabatically and superhorizon modes have ω = -1/3, we approximately determine the regularized stress-energy tensor, whose conservation is utilized to fix the time dependence of the vacuum energy density. We then show that vacuum energy density grows from zero up to H 4 in about one Hubble time, vacuum fluctuations give positive acceleration of the order of H 4 /M 2 p and they can completely alter the cosmic evolution of the universe dominated otherwise by the cosmological constant, radiation or pressureless dust. Although the magnitude of the acceleration is tiny to explain the observed value today, our findings indicate that the cosmological backreaction of vacuum fluctuations must be taken into account in early stages of cosmic evolution.

ITER - torus vacuum pumping system remote handling issues

International Nuclear Information System (INIS)

Stringer, J.

1992-11-01

This report describes design issues concerning remote maintenance of the ITER torus vacuum pumping system. Key issues under investigation in this report are bearings for inert gas operation, transporter integration options, cryopump access, gate valve maintenance frequency, tritium effects on materials, turbomolecular pump design, and remote maintenance. Alternative bearing materials are explored for inert gas operation. Encapsulated motors and rotary feedthroughs offer an alternative option where space requirements are restrictive. A number of transporter options are studied. The preferred scheme depends on the shielded reconfigured ducts to prevent streaming and activation of RH (remote handling) equipment. A radiation mapping of the cell is required to evaluate this concept. Valve seal and bellow life are critical issues and need to be evaluated, as they have a direct bearing on the provision of adequate RH equipment to meet scheduled and unscheduled maintenance outages. The limited space on the inboard side of the cryopumps for RH equipment access requires a reconfigured duct and manifold. A modified shielded duct arrangement is proposed, which would provide more access space, reduced activation of components, and the potential for improved valve seal life. Work at Mound Laboratories has shown the adverse effects of tritium on some bearing lubricants. Silicone-based lubricants should be avoided. (11 refs., 2 tabs., 31 figs.)

Release of low molecular weight silicones and platinum from silicone breast implants.

Science.gov (United States)

Lykissa, E D; Kala, S V; Hurley, J B; Lebovitz, R M

1997-12-01

We have conducted a series of studies addressing the chemical composition of silicone gels from breast implants as well as the diffusion of low molecular weight silicones (LM-silicones) and heavy metals from intact implants into various surrounding media, namely, lipid-rich medium (soy oil), aqueous tissue culture medium (modified Dulbecco's medium, DMEM), or an emulsion consisting of DMEM plus 10% soy oil. LM-silicones in both implants and surrounding media were detected and quantitated using gas chromatography (GC) coupled with atomic emission (GC-AED) as well as mass spectrometric (GC/MS) detectors, which can detect silicones in the nanogram range. Platinum, a catalyst used in the preparation of silicone gels, was detected and quantitated using inductive argon-coupled plasma/mass spectrometry (ICP-MS), which can detect platinum in the parts per trillion range. Our results indicate that GC-detectable low molecular weight silicones contribute approximately 1-2% to the total gel mass and consist predominantly of cyclic and linear poly-(dimethylsiloxanes) ranging from 3 to 20 siloxane [(CH3)2-Si-O] units (molecular weight 200-1500). Platinum can be detected in implant gels at levels of approximately 700 micrograms/kg by ICP-MS. The major component of implant gels appears to be high molecular weight silicone polymers (HM-silicones) too large to be detected by GC. However, these HM-silicones can be converted almost quantitatively (80% by mass) to LM-silicones by heating implant gels at 150-180 degrees C for several hours. We also studied the rates at which LM-silicones and platinum leak through the intact implant outer shell into the surrounding media under a variety of conditions. Leakage of silicones was greatest when the surrounding medium was lipid-rich, and up to 10 mg/day LM-silicones was observed to diffuse into a lipid-rich medium per 250 g of implant at 37 degrees C. This rate of leakage was maintained over a 7-day experimental period. Similarly, platinum was

Quality Management of CERN Vacuum Controls

CERN Document Server

Antoniotti, F; Fortescue-Beck, E; Gama, J; Gomes, P; Le Roux, P; Pereira, H F; Pigny, G

2014-01-01

The vacuum controls Section (TE-VSC-ICM) is in charge of the monitoring, maintenance and consolidation of the control systems of all accelerators and detectors in CERN; this represents 6 000 instruments distributed along 128 km of vacuum chambers, often of heterogeneous architectures and of diverse

Thermodynamic performance of multi-stage gradational lead screw vacuum pump

Science.gov (United States)

Zhao, Fan; Zhang, Shiwei; Sun, Kun; Zhang, Zhijun

2018-02-01

As a kind of dry mechanical vacuum pump, the twin-screw vacuum pump has an outstanding pumping performance during operation, widely used in the semiconductor industry. Compared with the constant lead screw (CLS) vacuum pump, the gradational lead screw (GLS) vacuum pump is more popularly applied in recent years. Nevertheless, not many comparative studies on the thermodynamic performance of GLS vacuum pump can be found in the literature. Our study focuses on one type of GLS vacuum pump, the multi-stage gradational lead screw (MGLS) vacuum pump, gives a detailed description of its construction and illustrates it with the drawing. Based on the structural analysis, the thermodynamic procedure is divided into four distinctive processes, including sucking process, transferring (compressing) process, backlashing process and exhausting process. The internal mechanism of each process is qualitatively illustrated and the mathematical expressions of seven thermodynamic parameters are given under the ideal situation. The performance curves of MGLS vacuum pump are plotted by MATLAB software and compared with those of the CLS vacuum pump in the same case. The results can well explain why the MGLS vacuum pump has more favorable pumping performance than the CLS vacuum pump in saving energy, reducing noise and heat dissipation.

Waveguide quantum electrodynamics in squeezed vacuum

Science.gov (United States)

You, Jieyu; Liao, Zeyang; Li, Sheng-Wen; Zubairy, M. Suhail

2018-02-01

We study the dynamics of a general multiemitter system coupled to the squeezed vacuum reservoir and derive a master equation for this system based on the Weisskopf-Wigner approximation. In this theory, we include the effect of positions of the squeezing sources which is usually neglected in the previous studies. We apply this theory to a quasi-one-dimensional waveguide case where the squeezing in one dimension is experimentally achievable. We show that while dipole-dipole interaction induced by ordinary vacuum depends on the emitter separation, the two-photon process due to the squeezed vacuum depends on the positions of the emitters with respect to the squeezing sources. The dephasing rate, decay rate, and the resonance fluorescence of the waveguide-QED in the squeezed vacuum are controllable by changing the positions of emitters. Furthermore, we demonstrate that the stationary maximum entangled NOON state for identical emitters can be reached with arbitrary initial state when the center-of-mass position of the emitters satisfies certain conditions.

Light emitting structures porous silicon-silicon substrate

International Nuclear Information System (INIS)

Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

1999-01-01

The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

Gelcasting of SiC/Si for preparation of silicon nitride bonded silicon carbide

International Nuclear Information System (INIS)

Xie, Z.P.; Tsinghua University, Beijing,; Cheng, Y.B.; Lu, J.W.; Huang, Y.

2000-01-01

In the present paper, gelcasting of aqueous slurry with coarse silicon carbide(1mm) and fine silicon particles was investigated to fabricate silicon nitride bonded silicon carbide materials. Through the examination of influence of different polyelectrolytes on the Zeta potential and viscosity of silicon and silicon carbide suspensions, a stable SiC/Si suspension with 60 vol% solid loading could be prepared by using polyelectrolyte of D3005 and sodium alginate. Gelation of this suspension can complete in 10-30 min at 60-80 deg C after cast into mold. After demolded, the wet green body can be dried directly in furnace and the green strength will develop during drying. Complex shape parts with near net size were prepared by the process. Effects of the debindering process on nitridation and density of silicon nitride bonded silicon carbide were also examined. Copyright (2000) The Australian Ceramic Society

PARAFFIN SEPARATION VACUUM DISTILLATION

Directory of Open Access Journals (Sweden)

Zaid A. Abdulrahman

2013-05-01

Full Text Available Simulated column performance curves were constructed for existing paraffin separation vacuum distillation column in LAB plant (Arab Detergent Company/Baiji-Iraq. The variables considered in this study are the thermodynamic model option, top vacuum pressure, top and bottom temperatures, feed temperature, feed composition & reflux ratio. Also simulated columns profiles for the temperature, vapor & liquid flow rates composition were constructed. Four different thermodynamic model options (SRK, TSRK, PR, and ESSO were used, affecting the results within 1-25% variation for the most cases.The simulated results show that about 2% to 8 % of paraffin (C10, C11, C12, & C13 present at the bottom stream which may cause a problem in the LAB plant. The major variations were noticed for the top temperature & the  paraffin weight fractions at bottom section with top vacuum pressure. The bottom temperature above 240 oC is not recommended because the total bottom flow rate decreases sharply, where as  the weight fraction of paraffins decrease slightly. The study gives evidence about a successful simulation with CHEMCAD

Anomalous vacuum expectation values

International Nuclear Information System (INIS)

Suzuki, H.

1986-01-01

The anomalous vacuum expectation value is defined as the expectation value of a quantity that vanishes by means of the field equations. Although this value is expected to vanish in quantum systems, regularization in general produces a finite value of this quantity. Calculation of this anomalous vacuum expectation value can be carried out in the general framework of field theory. The result is derived by subtraction of divergences and by zeta-function regularization. Various anomalies are included in these anomalous vacuum expectation values. This method is useful for deriving not only the conformal, chiral, and gravitational anomalies but also the supercurrent anomaly. The supercurrent anomaly is obtained in the case of N = 1 supersymmetric Yang-Mills theory in four, six, and ten dimensions. The original form of the energy-momentum tensor and the supercurrent have anomalies in their conservation laws. But the modification of these quantities to be equivalent to the original one on-shell causes no anomaly in their conservation laws and gives rise to anomalous traces

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

FTIR studies of swift silicon and oxygen ion irradiated porous silicon

International Nuclear Information System (INIS)

Bhave, Tejashree M.; Hullavarad, S.S.; Bhoraskar, S.V.; Hegde, S.G.; Kanjilal, D.

1999-01-01

Fourier Transform Infrared Spectroscopy has been used to study the bond restructuring in silicon and oxygen irradiated porous silicon. Boron doped p-type (1 1 1) porous silicon was irradiated with 10 MeV silicon and a 14 MeV oxygen ions at different doses ranging between 10 12 and 10 14 ions cm -2 . The yield of PL in porous silicon irradiated samples was observed to increase considerably while in oxygen irradiated samples it was seen to improve only by a small extent for lower doses whereas it decreased for higher doses. The results were interpreted in view of the relative intensities of the absorption peaks associated with O-Si-H and Si-H stretch bonds

AA, vacuum tank for stochastic precooling

CERN Multimedia

CERN PhotoLab

1979-01-01

The vaccum tank in which the fast stochastic precooling kicker was installed. It is clad with heating jackets for bake-out to 200 deg C, indispensable for reaching the operational vacuum of 7E-11 Torr. Alain Poncet, responsible for AA vacuum, is looking on. See also 7910268, 8002234.

FRIB driver linac vacuum model and benchmarks

CERN Document Server

Durickovic, Bojan; Kersevan, Roberto; Machicoane, Guillaume

2014-01-01

The Facility for Rare Isotope Beams (FRIB) is a superconducting heavy-ion linear accelerator that is to produce rare isotopes far from stability for low energy nuclear science. In order to achieve this, its driver linac needs to achieve a very high beam current (up to 400 kW beam power), and this requirement makes vacuum levels of critical importance. Vacuum calculations have been carried out to verify that the vacuum system design meets the requirements. The modeling procedure was benchmarked by comparing models of an existing facility against measurements. In this paper, we present an overview of the methods used for FRIB vacuum calculations and simulation results for some interesting sections of the accelerator. (C) 2013 Elsevier Ltd. All rights reserved.

Annealing temperature dependence of photoluminescent characteristics of silicon nanocrystals embedded in silicon-rich silicon nitride films grown by PECVD

International Nuclear Information System (INIS)

Chao, D.S.; Liang, J.H.

2013-01-01

Recently, light emission from silicon nanostructures has gained great interest due to its promising potential of realizing silicon-based optoelectronic applications. In this study, luminescent silicon nanocrystals (Si–NCs) were in situ synthesized in silicon-rich silicon nitride (SRSN) films grown by plasma-enhanced chemical vapor deposition (PECVD). SRSN films with various excess silicon contents were deposited by adjusting SiH 4 flow rate to 100 and 200 sccm and keeping NH 3 one at 40 sccm, and followed by furnace annealing (FA) treatments at 600, 850 and 1100 °C for 1 h. The effects of excess silicon content and post-annealing temperature on optical properties of Si–NCs were investigated by photoluminescence (PL) and Fourier transform infrared spectroscopy (FTIR). The origins of two groups of PL peaks found in this study can be attributed to defect-related interface states and quantum confinement effects (QCE). Defect-related interface states lead to the photon energy levels almost kept constant at about 3.4 eV, while QCE results in visible and tunable PL emission in the spectral range of yellow and blue light which depends on excess silicon content and post-annealing temperature. In addition, PL intensity was also demonstrated to be highly correlative to the excess silicon content and post-annealing temperature due to its corresponding effects on size, density, crystallinity, and surface passivation of Si–NCs. Considering the trade-off between surface passivation and structural properties of Si–NCs, an optimal post-annealing temperature of 600 °C was suggested to maximize the PL intensity of the SRSN films

Resistivity and morphology of TiSi2 formed on Xe+-implanted polycrystalline silicon

International Nuclear Information System (INIS)

Kuwano, H.; Phillips, J.R.; Mayer, J.W.

1990-01-01

Xe ion irradiation of polycrystalline silicon before Ti deposition is found to affect subsequent silicide formation. Silicide films were prepared by implanting 60, 100, or 240 keV Xe + ions into 500-nm-thick undoped polycrystalline silicon before depositing Ti and annealing in vacuum. Preimplantation altered the subsequent silicide resistivity, x-ray diffraction patterns, and morphology as compared to films prepared on unimplanted polycrystalline Si substrates. We found that minimal TiSi 2 resistivities were achieved at lower temperatures with preimplantation, indicating that the Xe-implanted substrate promotes a lower temperature transition from the metastable C49 phase to the low-resistivity equilibrium C54 phase of TiSi 2 . X-ray diffraction results confirmed the lower temperature formation of the C54 phase with preimplantation. Low-temperature annealing (650 degree C, 30 min) of 6x10 16 cm -2 , 240 keV Xe + -implanted samples yielded low-resistivity (∼22 μΩ cm) silicide films, while simultaneously annealed samples without preimplantation had resistivity five times higher. Lower doses were effective at lower implant energies, with low resistivity achieved after 725 degree C, 30 min annealing for 2x10 15 cm -2 , 60 keV Xe + preimplantation

Outgassing rates before, during and after bake-out for various vacuum and first wall candidate materials of a large tokamak device

International Nuclear Information System (INIS)

Yoshikawa, H.; Gomay, J.; Sugiyama, Y.; Mizuno, M.; Komiya, S.; Tazima, T.

1977-01-01

Outgassing rates of vacuum wall candidate materials; stainless steel SS-304L and YUS-170, Inconel-625 and Hastelloy-X, and first wall materials; molybdenum, pyrolytic graphite and silicon carbide are measured before, during and after a bake-out at 500 0 C. The outgassing rate from the inside wall of the cylinder made of each material is estimated from the pressure difference between before and after a calibrated orifice. The ultimate outgassing rates of SS-304L and pyrolytic graphite, and YUS-170 Inconel-625, Hastelloy-X and molybdenum are the orders of 10 -10 and 10 -11 Pa.l.s -1 cm -2 , respectively

Vacuum and fueling systems for the IGNITEX experiment

International Nuclear Information System (INIS)

Hallock, G.; Booth, W.D.; Carrera, R.

1989-01-01

The results of preliminary studies of the vacuum and fueling requirements for the proposed fusion ignition experiment IGNITEX are presented. An initial design for the vacuum pumping and plasma fueling system is given. The IGNITEX vacuum system must meet the demands of providing sufficient pumping speed to reach a base pressure of about 10 -8 Torr to provide a clean environment for plasma formation. In addition, the pumping speed should meet the requirements during the discharge cleaning cycle. The design of the vacuum pumping system including layout and location and structure of the vacuum ports required for pumping and diagnostic access is presented. Two different types of pumping systems - turbomolecular pumps and cryrogenic pumps have been considered. The advantages and disadvantages of each type of pumping system are analyzed

3. International Symposium 'Vacuum Technology and Equipment'. ISVTE-3

International Nuclear Information System (INIS)

Kogan, V.S.; Shulaev, V.M.

1999-01-01

The reports of the 3th International Symposium 'Vacuum Technology and Equipment', which was held in Kharkov at 22-24 September 1999 are presented. In this issue such subject are published: - structure and properties of thin films and coatings, and their dependencies on deposition and treatment regimes; - uses of vacuum in research and applied fields, investigation and control of vacuum systems parameters, vacuum research

Strategies for doped nanocrystalline silicon integration in silicon heterojunction solar cells

Czech Academy of Sciences Publication Activity Database

Seif, J.; Descoeudres, A.; Nogay, G.; Hänni, S.; de Nicolas, S.M.; Holm, N.; Geissbühler, J.; Hessler-Wyser, A.; Duchamp, M.; Dunin-Borkowski, R.E.; Ledinský, Martin; De Wolf, S.; Ballif, C.

2016-01-01

Roč. 6, č. 5 (2016), s. 1132-1140 ISSN 2156-3381 R&D Projects: GA MŠk LM2015087 Institutional support: RVO:68378271 Keywords : microcrystalline silicon * nanocrystalline silicon * silicon heterojunctions (SHJs) * solar cells Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.712, year: 2016

Periodically poled silicon

Science.gov (United States)

Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

2010-02-01

Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

Carbon nanotubes based vacuum gauge

Science.gov (United States)

Rudyk, N. N.; Il'in, O. I.; Il'ina, M. V.; Fedotov, A. A.; Klimin, V. S.; Ageev, O. A.

2017-11-01

We have created an ionization type Vacuum gauge with sensor element based on an array of vertically aligned carbon nanotubes. Obtained asymmetrical current-voltage characteristics at different voltage polarity on the electrode with the CNTs. It was found that when applying a negative potential on an electrode with the CNTs, the current in the gap is higher than at a positive potential. In the pressure range of 1 ÷ 103 Torr vacuum gauge sensitivity was 6 mV/Torr (at a current of 4.5·10-5 A) and in the range of 10-5 ÷ 1 Torr was 10 mV/Torr (at a current of 1.3·10-5 A). It is shown that the energy efficiency of vacuum gauge can be increased in the case where electrode with CNT operates as an emitter of electrons.

Baryogenesis in false vacuum

Energy Technology Data Exchange (ETDEWEB)

Hamada, Yuta [KEK Theory Center, IPNS, KEK, Tsukuba, Ibaraki (Japan); Yamada, Masatoshi [Kanazawa University, Institute for Theoretical Physics, Kanazawa (Japan)

2017-09-15

The null result in the LHC may indicate that the standard model is not drastically modified up to very high scales, such as the GUT/string scale. Having this in the mind, we suggest a novel leptogenesis scenario realized in the false vacuum of the Higgs field. If the Higgs field develops a large vacuum expectation value in the early universe, a lepton number violating process is enhanced, which we use for baryogenesis. To demonstrate the scenario, several models are discussed. For example, we show that the observed baryon asymmetry is successfully generated in the standard model with higher-dimensional operators. (orig.)

Efficiency Enhancement of Silicon Solar Cells by Porous Silicon Technology

Directory of Open Access Journals (Sweden)

Eugenijus SHATKOVSKIS

2012-09-01

Full Text Available Silicon solar cells produced by a usual technology in p-type, crystalline silicon wafer were investigated. The manufactured solar cells were of total thickness 450 mm, the junction depth was of 0.5 mm – 0.7 mm. Porous silicon technologies were adapted to enhance cell efficiency. The production of porous silicon layer was carried out in HF: ethanol = 1 : 2 volume ratio electrolytes, illuminating by 50 W halogen lamps at the time of processing. The etching current was computer-controlled in the limits of (6 ÷ 14 mA/cm2, etching time was set in the interval of (10 ÷ 20 s. The characteristics and performance of the solar cells samples was carried out illuminating by Xenon 5000 K lamp light. Current-voltage characteristic studies have shown that porous silicon structures produced affect the extent of dark and lighting parameters of the samples. Exactly it affects current-voltage characteristic and serial resistance of the cells. It has shown, the formation of porous silicon structure causes an increase in the electric power created of solar cell. Conversion efficiency increases also respectively to the initial efficiency of cell. Increase of solar cell maximum power in 15 or even more percent is found. The highest increase in power have been observed in the spectral range of Dl @ (450 ÷ 850 nm, where ~ 60 % of the A1.5 spectra solar energy is located. It has been demonstrated that porous silicon technology is effective tool to improve the silicon solar cells performance.DOI: http://dx.doi.org/10.5755/j01.ms.18.3.2428

Chiral silicon nanostructures

International Nuclear Information System (INIS)

Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

2006-01-01

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

Vacuum energy from noncommutative models

Science.gov (United States)

Mignemi, S.; Samsarov, A.

2018-04-01

The vacuum energy is computed for a scalar field in a noncommutative background in several models of noncommutative geometry. One may expect that the noncommutativity introduces a natural cutoff on the ultraviolet divergences of field theory. Our calculations show however that this depends on the particular model considered: in some cases the divergences are suppressed and the vacuum energy is only logarithmically divergent, in other cases they are stronger than in the commutative theory.

On the topological vacuum degeneracy in gauge theories

International Nuclear Information System (INIS)

Pervushin, V.N.

1982-01-01

It is shown that the nontrivial topology of gauge fields leads to the Josephson effect in the field space, i. e., to nonvanishing vacuum fields. The same definition is proposed for the physical (infrared) vacuum for Abelian (QED) and nonAbelian (QCD) theories. The equations and the topological Josephson effect for the gluon vacuum are discussed

Safety shield for vacuum/pressure-chamber windows

Science.gov (United States)

Shimansky, R. A.; Spencer, R.

1980-01-01

Optically-clear shatter-resistant safety shield protects workers from implosion and explosion of vacuum and pressure windows. Plastic shield is inexpensive and may be added to vacuum chambers, pressure chambers, and gas-filling systems.

The chemistry of silicon

CERN Document Server

Rochow, E G; Emeléus, H J; Nyholm, Ronald

1975-01-01

Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

Analytical and numerical tools for vacuum systems

CERN Document Server

Kersevan, R

2007-01-01

Modern particle accelerators have reached a level of sophistication which require a thorough analysis of all their sub-systems. Among the latter, the vacuum system is often a major contributor to the operating performance of a particle accelerator. The vacuum engineer has nowadays a large choice of computational schemes and tools for the correct analysis, design, and engineering of the vacuum system. This paper is a review of the different type of algorithms and methodologies which have been developed and employed in the field since the birth of vacuum technology. The different level of detail between simple back-of-the-envelope calculations and more complex numerical analysis is discussed by means of comparisons. The domain of applicability of each method is discussed, together with its pros and cons.

Design of the CLIC Quadrupole Vacuum Chambers

CERN Document Server

Garion, C

2010-01-01

The Compact Linear Collider, under study, requires vacuum chambers with a very small aperture, of the order of 8 mm in diameter, and with a length up to around 2 m for the main beam quadrupoles. To keep the very tight geometrical tolerances on the quadrupoles, no bake out is allowed. The main issue is to reach UHV conditions (typically 10-9 mbar static pressure) in a system where the vacuum performance is driven by water outgassing. For this application, a thinwalled stainless steel vacuum chamber with two ante chambers equipped with NEG strips, is proposed. The mechanical design, especially the stability analysis, is shown. The key technologies of the prototype fabrication are given. Vacuum tests are carried out on the prototypes. The test set-up as well as the pumping system conditions are presented.

Accelerator tube vacuum conditions in the NSF tandem

International Nuclear Information System (INIS)

Groome, A.E.

1979-08-01

The Nuclear Structure Facility currently under construction at the Daresbury Laboratory contains a 30 MV tandem Van de Graaff accelerator with a modular design of accelerator tube. The vacuum system requirements are specified to limit beam loss due to charge-state-changing collisions in the residual gas. This report gives an assessment of some of the parameters affecting the vacuum pressure in an operational machine. Measurements are made of the vacuum conductance and outgassing rate of accelerator tube modules. An assessment is made of the effects of temperature rise, beam mis-steering and the presence of suppression magnets on the ultimate vacuum obtainable. Predictions are made of the pressure profile throughout the machine and consideration is given to operational problems such as tube conditioning and temporary loss of pumping. A schematic diagram of the tandem and its vacuum system is shown. (author)

HIGH PRODUCTIVITY VACUUM BLASTING SYSTEM

International Nuclear Information System (INIS)

McPhee, William S.

1999-01-01

The objective of this project is to improve the productivity and lower the expense of existing vacuum blasting technology. This technology is used to remove radioactive contamination, PCBs, and lead-based paint and provides worker protection by continuously recycling the material and dust for the decontamination tasks. The proposed work would increase the cleaning rate and provide safe and cost-effective decontamination of the DOE sites. This work focuses on redesigning and improving existing vacuum blasting technology including blast head nozzles, ergonomic handling of the blast head by reducing its weight; brush-ring design, vacuum level regulator, efficiency of the dust separator, and operational control sensors. The redesign is expected to enhance the productivity and economy of the vacuum blasting system by at least 50% over current vacuum blasting systems. There are three phases in the project. Phase I consists of developing and testing mathematical models. Phase II consists of pre-prototype design and fabrication and pre-prototype unit testing. Phase III consists of prototype design and field verification testing. In phase I, mathematical models are developed and analyzed for the nozzle, blast head, wind curtain, and dust separator, first as individual devices and then combined as an integrated model. This allows study of respective airflow and design parameters. The Contractor shall, based on the results of the mathematical modeling studies, design experimental models of the components and test these models. In addition, the Contractor shall develop sensors to detect the relationship of the blast head to the blast surfaces and controls to minimize the dependency on an operator's skill and judgment to obtain optimum positioning, as well as real-time characterization sensors to determine as the blast head is moving the depth to which coatings must be removed, thereby improving production and minimizing waste. In phase II, the Contractor shall design and

UHV testing of upgraded vacuum chambers for Indus-1

International Nuclear Information System (INIS)

Sindal, B.K.; Kumar, K.V.A.N.P.S.; Ramshiroman; Bhange, Nilesh; Yadav, D.P.; Sridhar, R.; Shukla, S.K.

2013-01-01

Indus-1 is a 450 MeV, 100 mA dedicated electron storage ring operating at pressure 10 -10 mbar range without beam and 10 -9 mbar range with beam using triode sputter ion pump (SIP) and titanium sublimation pump (TSP) combination. Indus-1 storage ring is presently working with six operational beam lines installed at three bending magnets. To accommodate two more beam lines and to reduce number of demountable joints, up-gradation of Indus-1 UHV system was planned. Salient features of upgraded vacuum system are bending magnet vacuum chambers with one extra port for additional beam line and straight section vacuum chambers with integrated TSP body. Half of the Indus-1 storage ring vacuum envelope with two bending magnet vacuum chamber and six straight section vacuum chambers were assembled with pumps, gauges etc, leak tested and tested for its UHV performance. Ultimate vacuum 5x10 -10 mbar with SIP and 2x10 -10 mbar after TSP pumping were achieved. Residual gas analyser (RGA) spectrum recorded for residual gas analysis indicated the imprints of a typical all metal UHV system having H 2 as major gas. This paper describes UHV testing of upgraded, newly fabricated vacuum chambers for Indus-1 storage ring. (author)

Microbial analysis of meatballs cooled with vacuum and conventional cooling.

Science.gov (United States)

Ozturk, Hande Mutlu; Ozturk, Harun Kemal; Koçar, Gunnur

2017-08-01

Vacuum cooling is a rapid evaporative cooling technique and can be used for pre-cooling of leafy vegetables, mushroom, bakery, fishery, sauces, cooked food, meat and particulate foods. The aim of this study was to apply the vacuum cooling and the conventional cooling techniques for the cooling of the meatball and to show the vacuum pressure effect on the cooling time, the temperature decrease and microbial growth rate. The results of the vacuum cooling and the conventional cooling (cooling in the refrigerator) were compared with each other for different temperatures. The study shows that the conventional cooling was much slower than the vacuum cooling. Moreover, the microbial growth rate of the vacuum cooling was extremely low compared with the conventional cooling. Thus, the lowest microbial growth occurred at 0.7 kPa and the highest microbial growth was observed at 1.5 kPa for the vacuum cooling. The mass loss ratio for the conventional cooling and vacuum cooling was about 5 and 9% respectively.

Window-assisted nanosphere lithography for vacuum micro-nano-electronics

International Nuclear Information System (INIS)

Li, Nannan; Pang, Shucai; Yan, Fei; Chen, Lei; Jin, Dazhi; Xiang, Wei; Zhang, De; Zeng, Baoqing

2015-01-01

Development of vacuum micro-nano-electronics is quite important for combining the advantages of vacuum tubes and solid-state devices but limited by the prevailing fabricating techniques which are expensive, time consuming and low-throughput. In this work, window-assisted nanosphere lithography (NSL) technique was proposed and enabled the low-cost and high-efficiency fabrication of nanostructures for vacuum micro-nano-electronic devices, thus allowing potential applications in many areas. As a demonstration, we fabricated high-density field emitter arrays which can be used as cold cathodes in vacuum micro-nano-electronic devices by using the window-assisted NSL technique. The details of the fabricating process have been investigated. This work provided a new and feasible idea for fabricating nanostructure arrays for vacuum micro-nano-electronic devices, which would spawn the development of vacuum micro-nano-electronics

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

International Nuclear Information System (INIS)

Wang, Xiaojuan; Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli; Zhou, Jun; Zhang, Zengxing

2015-01-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Study on the graphene/silicon Schottky diodes by transferring graphene transparent electrodes on silicon

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaojuan [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Li, Dong; Zhang, Qichong; Zou, Liping; Wang, Fengli [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhou, Jun, E-mail: zhoujunzhou@tongji.edu.cn [Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Zhang, Zengxing, E-mail: zhangzx@tongji.edu.cn [MOE Key Laboratory of Advanced Micro-structured Materials & Shanghai Key Laboratory of Special Artificial Microstructure Materials and Technology, School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China)

2015-10-01

Graphene/silicon heterostructures present a Schottky characteristic and have potential applications for solar cells and photodetectors. Here, we fabricated graphene/silicon heterostructures by using chemical vapor deposition derived graphene and n-type silicon, and studied the electronic and optoelectronic properties through varying their interface and silicon resistivity. The results exhibit that the properties of the fabricated configurations can be effectively modulated. The graphene/silicon heterostructures with a Si (111) interface and high resistivity show a better photovoltaic behavior and should be applied for high-performance photodetectors. With the combined atomic force microscopy and theoretical analysis, the possible origination is discussed. The work here should be helpful on exploring high-performance graphene/silicon photoelectronics. - Highlights: • Different graphene/silicon heterostructures were fabricated. • Electronic and optoelectronic properties of the heterostructures were studied. • Graphene/silicon heterostructures were further explored for photodetectors.

Past, Present and Future of Linac 2 Vacuum System

CERN Document Server

Mahner, E

2011-01-01

This note aims to review the past, present, and future operation of CERN's Linac 2 vacuum system. The machine vacuum system layout with its major components is summarized. Operational problems arising in 2006 yielded to a leak test campaign of the whole machine, which detected a new, major leak on tank 3. Details about the mitigation of this leak are described as well as additional diagnostics installed during shutdown 2006/07. The pressure evolution of the most critical vacuum sector is analyzed. A statistics of vacuum system faults observed since 2000 is presented and compared with other systems. Finally, a perspective for the vacuum system operation until 2017/18 is outlined.

ALICE's first vacuum bakeout a success

CERN Multimedia

2007-01-01

At the beginning of April, the ALICE central beryllium beam pipe and absorber beam pipes were successfully conditioned. The installation and bakeout shell surround the beam pipe (lower left), running through the middle of the ITS and TPC. Notice the high-tech cooling system, an additional precaution to avoid overheating the ALICE detection equipment.One end of the vacuum sector during the bakeout and pure gas refill. It is unusual for a vacuum sector to end as it does in the middle of a non-accessible detector and made the installation and cabling of the bakeout equipment a more difficult procedure. Just before Easter, the first bakeout and NEG activation of experimental chambers in the LHC was carried out, followed by ultra pure gas refill. The bakeout consisted of externally heating the chambers under vacuum in order to lower their outgassing. This same heating process also activates the NEG, a coating on the inside surface of the beam vacuum chambers, which pumps the residual gas. ALICE's bakeout was pa...

Compactified vacuum in ten dimensions

International Nuclear Information System (INIS)

Wurmser, D.

1987-01-01

Since the 1920's, theories which unify gravity with the other fundamental forces have called for more than the four observed dimensions of space-time. According to such a theory, the vacuum consists of flat four-dimensional space-time described by the Minkowski metric M 4 and a compactified space B. The dimensions of B are small, and the space can only be observed at distance scales smaller than the present experimental limit. These theories have had serious difficulties. The equations of gravity severely restrict the possible choices for the space B. The allowed spaces are complicated and difficult to study. The vacuum is furthermore unstable in the sense that a small perturbation causes the compactified dimensions to expand indefinitely. There is an addition a semi-classical argument which implies that the compactified vacuum by annihilated by virtual black holes. It follows that a universe with compactified extra dimensions could not have survived to the present. These results were derived by applying the equations of general relativity to spaces of more than four dimensions. The form of these equations was assumed to be unchanged by an increase in the number of dimensions. The authors illustrate the effect of such terms by considering the example B = S 6 where S 6 is the six-dimensional sphere. Only when the extra terms are included is this choice of the compactified space allowed. He explore the effect of a small perturbation on such a vacuum. The ten-dimensional spherically symmetric potential is examined, and I determine conditions under which the formation of virtual black holes is forbidden. The examples M 4 x S 6 is still plagued by the semi-classical instability, but this result does not hold in general. The requirement that virtual black holes be forbidden provides a test for any theory which predicts a compactified vacuum

Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

International Nuclear Information System (INIS)

Bhoraskar, V.N.

2001-01-01

The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Degradation of Silicon Carbide Reflective Surfaces in the LEO Environment

Science.gov (United States)

Mileti, Sandro; Coluzzi, Plinio; Marchetti, Mario

2009-01-01

Space mirrors in Low Earth Orbit (LEO) encounter a degradation problem caused by the impact of atomic oxygen (ATOX) in the space environment. This paper presents an experiment of the atomic oxygen impact degradation and UV synergic effects on ground simulation. The experiment was carried out in a dedicated ATOX simulation vacuum chamber. As target materials, a polished CVD Beta-silicon carbide (SiC) coating was investigated. The selection of silicon carbide is due to its high potential candidate as a mirror layer substrate material for its good reflectance at UV wavelengths and excellent thermal diffusivity. It has highly desirable mechanical and thermal properties and can achieve an excellent surface finish. The deposition of the coatings were on carbon-based material substrate; i.e., silicon impregnated carbon fiber composite (C/SiC). Mechanical and thermal properties of the coatings such as hardness and Coefficient of Thermal Expansion (CTE) were achieved. Several atomic oxygen impact angles were studied tilting the target samples respect to the flux direction. The various impact angles permitted to analyze the different erosion rates and typologies which the mirrors would encounter in LEO environment. The degradation was analyzed in various aspects. Macroscopic mass loss per unit area, surface roughness and morphology change were basically analyzed. The exposed surfaces of the materials were observed through a Scanning Electron Microscope (SEM). Secondly, optical diagnostic of the surfaces were performed in order to investigate their variation in optical properties as the evaluation of reflectance degradation. The presence of micro-cracks caused by shrinkage, grinding, polishing or thermal cycling and the porosity in the coatings, could have led to the undercutting phenomenon. Observation of uprising of undercutting was also conducted. Remarks are given regarding capabilities in short-term mission exposures to the LEO environment of this coating.

Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium

Science.gov (United States)

Sigillito, Anthony James

Many proposals for quantum information devices rely on electronic or nuclear spins in semiconductors because of their long coherence times and compatibility with industrial fabrication processes. One of the most notable qubits is the electron spin bound to phosphorus donors in silicon, which offers coherence times exceeding seconds at low temperatures. These donors are naturally isolated from their environments to the extent that silicon has been coined a "semiconductor vacuum". While this makes for ultra-coherent qubits, it is difficult to couple two remote donors so quantum information proposals rely on high density arrays of qubits. Here, single qubit addressability becomes an issue. Ideally one would address individual qubits using electric fields which can be easily confined. Typically these schemes rely on tuning a donor spin qubit onto and off of resonance with a magnetic driving field. In this thesis, we measure the electrical tunability of phosphorus donors in silicon and use the extracted parameters to estimate the effects of electric-field noise on qubit coherence times. Our measurements show that donor ionization may set in before electron spins can be sufficiently tuned. We therefore explore two alternative options for qubit addressability. First, we demonstrate that nuclear spin qubits can be directly driven using electric fields instead of magnetic fields and show that this approach offers several advantages over magnetically driven spin resonance. In particular, spin transitions can occur at half the spin resonance frequency and double quantum transitions (magnetic-dipole forbidden) can occur. In a second approach to realizing tunable qubits in semiconductors, we explore the option of replacing silicon with germanium. We first measure the coherence and relaxation times for shallow donor spin qubits in natural and isotopically enriched germanium. We find that in isotopically enriched material, coherence times can exceed 1 ms and are limited by a

Vacuum ultra-violet and ultra-violet scintillation light detection by means of silicon photomultipliers at cryogenic temperature

Energy Technology Data Exchange (ETDEWEB)

Falcone, A., E-mail: andrea.falcone@pv.infn.it [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Bertoni, R. [INFN Sezione di Milano Bicocca, Piazza della Scienza, 3, 20126 Milano (Italy); Boffelli, F. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Bonesini, M. [INFN Sezione di Milano Bicocca, Piazza della Scienza, 3, 20126 Milano (Italy); Cervi, T. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); Menegolli, A. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Montanari, C.; Prata, M.C.; Rappoldi, A.; Raselli, G.L.; Rossella, M.; Simonetta, M. [INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Spanu, M. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); Torti, M. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Zani, A. [INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy)

2015-07-01

We tested the performance of two types of silicon photomultipliers, AdvanSiD ASD-NUV-SiPM3S-P and Hamamatsu 3×3 MM-50 UM VUV2, both at room (300 K) and at liquid nitrogen (77 K) temperature: breakdown voltage, quenching resistance, signal shape, gain and dark counts rate have been studied as function of temperature. The response of the devices to ultra-violet light is also studied. - Highlights: • We tested 2 SiPMs both at room and at cryogenic temperature. • Breakdown voltage, quenching resistance, gain and dark rate were measured. • Efficiency for VUV light detection was measured.

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

A convenient way of manufacturing silicon nanotubes on a silicon substrate

Energy Technology Data Exchange (ETDEWEB)

Zhang, Changchang; Cheng, Heming; Liu, Xiang, E-mail: liuxiang@ahut.edu.cn

2016-07-01

A convenient approach of preparing silicon nanotubes (SiNTs) on a silicon substrate is described in this work in detail. Firstly, a porous silicon (PSi) slice is prepared by a galvanic displacement reaction. Then it is put into aqueous solutions of 20% (w%) ammonium fluoride and 2.5 mM cobalt nitrate for a predetermined time. The cobalt ions are reduced and the resulted cobalt particles are deposited on the PSi slice. After the cobalt particles are removed with 5 M nitric acid a plenty of SiNTs come out and exhibit disorderly on the silicon substrate, which are illustrated by scanning electron microscopy (SEM). The compositions of the SiNTs are examined by energy-dispersive X-ray spectroscopy. Based on the SEM images, a suggested mechanism is put forward to explain the generation of the SiNTs on the PSi substrate. - Highlights: • A facile approach of preparing silicon nano tubes was invented. • The experimental results demonstrated the strong reducibility of Si-H{sub x} species. • It provided a new way of manufacturing silicon-contained hybrids.

Development of Radiation Hard Radiation Detectors, Differences between Czochralski Silicon and Float Zone Silicon

CERN Document Server

Tuominen, Eija

2012-01-01

The purpose of this work was to develop radiation hard silicon detectors. Radiation detectors made ofsilicon are cost effective and have excellent position resolution. Therefore, they are widely used fortrack finding and particle analysis in large high-energy physics experiments. Silicon detectors willalso be used in the CMS (Compact Muon Solenoid) experiment that is being built at the LHC (LargeHadron Collider) accelerator at CERN (European Organisation for Nuclear Research). This work wasdone in the CMS programme of Helsinki Institute of Physics (HIP).Exposure of the silicon material to particle radiation causes irreversible defects that deteriorate theperformance of the silicon detectors. In HIP CMS Programme, our approach was to improve theradiation hardness of the silicon material with increased oxygen concentration in silicon material. Westudied two different methods: diffusion oxygenation of Float Zone silicon and use of high resistivityCzochralski silicon.We processed, characterised, tested in a parti...

Quantum vacuum energy in graphs and billiards

International Nuclear Information System (INIS)

Kaplan, L.

2010-01-01

The vacuum (Casimir) energy in quantum field theory is a problem relevant both to new nanotechnology devices and to dark energy in cosmology. The crucial question is the dependence of the energy on the system geometry. Despite much progress since the first prediction of the Casimir effect in 1948 and its subsequent experimental verification in simple geometries, even the sign of the force in nontrivial situations is still a matter of controversy. Mathematically, vacuum energy fits squarely into the spectral theory of second-order self-adjoint elliptic linear differential operators. Specifically one promising approach is based on the small-t asymptotics of the cylinder kernel e -t√(H) , where H is the self-adjoint operator under study. In contrast with the well-studied heat kernel e -tH , the cylinder kernel depends in a non-local way on the geometry of the problem. We discuss some results by the Louisiana-Oklahoma-Texas collaboration on vacuum energy in model systems, including quantum graphs and two-dimensional cavities. The results may shed light on general questions, including the relationship between vacuum energy and periodic or closed classical orbits, and the contribution to vacuum energy of boundaries, edges, and corners.

Vacuum Analysis of Scanning Horn of Electron Beam Machine

International Nuclear Information System (INIS)

Suprapto; Sukidi; Sukaryono; Setyo Atmojo; Djasiman

2003-01-01

Vacuum analysis of scanning horn of electron beam machine (EBM) has been carried out. In EBM, electron beam produced by the electron gun is accelerated by the accelerating tube toward the target via scanning horn and window. To avoid the disturbance of electron beam trajectory in side the EBM, it is necessary to evacuate the EBM. In designing and constructing the scanning horn, vacuum analysis must be carried out to find the ultimate vacuum grade based on the analysis as well as on the test resulted by the vacuum pump. The ultimate vacuum grade is important and affecting the electron trajectory from electron gun to the target. The yield of the vacuum analysis show that the load gas to be evacuated were the outgassing, permeation and leakages where each value were 5.96487x10 -6 Torr liter/sec, 6.32083x10 -7 Torr liter/sec, and 1.3116234x10 -4 Torr liter/sec respectively, so that the total gas load was 1.377587x10 -4 Torr liter/sec. The total conductivity according to test result was 15.769 liter/sec, while the effective pumping rate and maximum vacuum obtained by RD 150 pump were 14.269 Torr liter/sec and 9.65x10 -6 Torr respectively, The vacuum steady state indicated by the test result was 3.5x10 -5 Torr. The pressure of 3.5x10 -5 Torr showed by the test is close to the capability of vacuum pump that is 2x10 -5 Torr. The vacuum test indicated a good result and that there was no leakage along the welding joint. In the latter of installation it considered to be has a pressure of 5x10 -6 Torr, because the aluminum gasket will be used to seal the window flanges and will be evacuated by turbomolecular pump with pumping rate of 500 liter/sec and ultimate vacuum of -10 Torr. (author)

2XIIB vacuum vessel: a unique design