WorldWideScience

Sample records for understanding solute-lean defects

  1. Understanding the defect structure of solution grown zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

    2012-05-15

    Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

  2. Towards a qualitative understanding of the scattering of topological defects

    International Nuclear Information System (INIS)

    Rosenzweig, C.; Srivastava, A.M.

    1991-01-01

    Head-on collisions of strings, monopoles, and Skyrmions result in 90 degree scattering. We propose a unified description of these objects (for the global case) as members of a definite class of topological defects. All soliton-soliton pairs that are members of this class scatter at 90 degree in head-on collisions. Our analysis also shows that the scattered solitons are composed of half-portions of the original solitons. We further predict back-to-back scattering for head-on collisions of a soliton-antisoliton pair at sufficiently high energies. We argue that these qualitative aspects of scattering are common because strings, monopoles, and Skyrmions correspond to various winding-number mappings from S n to S n . Our analysis concentrates on the smoothness of the field configurations and may be extendible to the scattering of gauged topological defects. For the case of strings our results lead to an understanding of intercommutivity and the accompanying formation of kinks

  3. Using process monitor wafers to understand directed self-assembly defects

    Science.gov (United States)

    Cao, Yi; Her, YoungJun; Delgadillo, Paulina R.; Vandenbroeck, Nadia; Gronheid, Roel; Chan, Boon Teik; Hashimoto, Yukio; Romo, Ainhoa; Somervell, Mark; Nafus, Kathleen; Nealey, Paul F.

    2013-03-01

    As directed self-assembly (DSA) has gained momentum over the past few years, questions about its application to high volume manufacturing have arisen. One of the major concerns is about the fundamental limits of defectivity that can be attained with the technology. If DSA applications demonstrate defectivity that rivals of traditional lithographic technologies, the pathway to the cost benefits of the technology creates a very compelling case for its large scale implementation. To address this critical question, our team at IMEC has established a process monitor flow to track the defectivity behaviors of an exemplary chemo-epitaxy application for printing line/space patterns. Through establishing this baseline, we have been able to understand both traditional lithographic defect sources in new materials as well as new classes of assembly defects associated with DSA technology. Moreover, we have explored new materials and processing to lower the level of the defectivity baseline. The robustness of the material sets and process is investigated as well. In this paper, we will report the understandings learned from the IMEC DSA process monitor flow.

  4. Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

    Energy Technology Data Exchange (ETDEWEB)

    Muntasir, Tanvir, E-mail: tanvir@iastate.edu, E-mail: sumitc@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Chaudhary, Sumit, E-mail: tanvir@iastate.edu, E-mail: sumitc@iastate.edu [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011 (United States)

    2015-11-28

    Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species.

  5. Understanding defect distributions in polythiophenes via comparison of regioregular and regiorandom species

    International Nuclear Information System (INIS)

    Muntasir, Tanvir; Chaudhary, Sumit

    2015-01-01

    Organic photovoltaics (OPVs) are regarded as promising for solar-electric conversion with steadily improving power conversion efficiencies. For further progress, it is crucial to understand and mitigate defect states (traps) residing in the band-gap of OPV materials. In this work, using capacitance measurements, we analyzed two major bands in the density of states (DOS) energy spectra of defects in poly(3-hexylthiophene) (P3HT); regio-regular and regio-random species of P3HT were compared to elucidate the role of morphological disorder. To accurately interpret the obtained DOS profile, trap emission prefactors and activation energy were extracted from temperature dependent capacitance-frequency measurements, while doping, Fermi energy, built-in voltage, and energy levels of the defects were extracted from capacitance-voltage measurements. We identified that the lower energy band—misinterpreted in literature as a defect distribution—stems from free carrier response. The higher energy defect distribution band for regio-random P3HT was an order of magnitude higher than region-regular P3HT, thus stemming from morphological disorder. Impedance spectroscopy was also employed for further comparison of the two P3HT species

  6. New developments in understanding development defects of enamel: optimizing clinical outcomes.

    Science.gov (United States)

    Kilpatrick, Nicky

    2009-12-01

    Developmental defects of enamel appear to be presenting with increasing frequency and with this comes significant clinical challenges. Affected teeth, in particular first permanent molars, are susceptible to dental caries as they are not only more porous but also very sensitive making effective oral hygiene difficult. Affected children require more dental treatment than their unaffected peers while also suffering greater pain and anxiety. Current clinical approaches focus on the placement of contemporary adhesive restorative materials onto the compromised tooth which in turn, fail, leading to premature loss of permanent molars with associated repercussions. Incomplete understanding of the structure, composition and behaviour of affected enamel means that clinical protocols are, as yet, empiric rather than evidence based. This review summarises contemporary evidence regarding this condition and identifies potential areas for future research which would assist in improving clinical outcomes.

  7. Implantation processing of Si: A unified approach to understanding ion-induced defects and their impact

    International Nuclear Information System (INIS)

    Holland, O.W.; Roth, E.G.

    1997-05-01

    A model is presented to account for the effects of ion-induced defects during implantation processing of Si. It will be shown that processing is quite generally affected by the presence of defect excesses rather than the total number of defects. a defect is considered excess if it represents a surplus locally of one defect type over its compliment. Processing spanning a wide range of implantation conditions will be presented to demonstrate that the majority of the total defects played little or no role in the process. This is a direct result of the ease with which the spatially correlated Frenkel pairs recombine either dynamically or during a post-implantation annealing. Based upon this model, a method will be demonstrated for manipulating or engineering the excess defects to modify their effects. In particular high-energy, self-ions are shown to inject vacancies into a boron implanted region resulting in suppression of transient enhanced diffusion of the dopant

  8. Understanding defect related luminescence processes in wide bandgap materials using low temperature multi-spectroscopic techniques

    DEFF Research Database (Denmark)

    Prasad, Amit Kumar

     dosimetric trap to holes located elsewhere in the lattice, which is affected by sensitivity changes leading to several uncertainties in the dose measurement. In contrast, it is shown here that the IRPL signal arises from intra-defect excitation and subsequent radiative emission within the IR dosimetric trap...

  9. Understanding lattice defects to influence ferromagnetic order of ZnO nanoparticles by Ni, Cu, Ce ions

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Kuldeep Chand, E-mail: dkuldeep.physics@gmail.com [Department of Physics, Panjab University, Chandigarh 160014 (India); Kotnala, R.K., E-mail: rkkotnala@gmail.com [CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2017-02-15

    Future spintronics technologies based on diluted magnetic semiconductors (DMS) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. It remains unclear, however, whether the ferromagnetism in DMS is intrinsic - a precondition for spintronics - or due to dopant clustering. For this, we include a simultaneous doping from transition metal (Ni, Cu) and rare earth (Ce) ions in ZnO nanoparticles that increase the antiferromagnetic ordering to achieve high-T{sub c} ferromagnetism. Rietveld refinement of XRD patterns indicate that the dopant ions in ZnO had a wurtzite structure and the dopants, Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions, are highly influenced the lattice constants to induce lattice defects. The Ni, Cu, Ce ions in ZnO have nanoparticles formation than nanorods was observed in pure sample. FTIR involve some organic groups to induce lattice defects and the metal-oxygen bonding of Zn, Ni, Cu, Ce and O atoms to confirm wurtzite structure. Raman analysis evaluates the crystalline quality, structural disorder and defects in ZnO lattice with doping. Photoluminescence spectra have strong near-band-edge emission and visible emission bands responsible for defects due to oxygen vacancies. The energy band gap is calculated using Tauc relation. Room temperature ferromagnetism has been described due to bound magnetic polarons formation with Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions in ZnO via oxygen vacancies. The zero field and field cooling SQUID measurement confirm the strength of antiferromagnetism in ZnO. The field cooling magnetization is studied by Curie-Weiss law that include antiferromagnetic interactions up to low temperature. The XPS spectra have involve +3/+4 oxidation states of Ce ions to influence the observed ferromagnetism. - Graphical abstract: The lattice defects/vacancies attributed by Ni and Ce ions in the wurtzite ZnO structure are responsible in high T{sub c} -ferromagnetism due to long-range magnetic

  10. Statistical thermodynamics -- A tool for understanding point defects in intermetallic compounds

    International Nuclear Information System (INIS)

    Ipser, H.; Krachler, R.

    1996-01-01

    The principles of the derivation of statistical-thermodynamic models to interpret the compositional variation of thermodynamic properties in non-stoichiometric intermetallic compounds are discussed. Two types of models are distinguished: the Bragg-Williams type, where the total energy of the crystal is taken as the sum of the interaction energies of all nearest-neighbor pairs of atoms, and the Wagner-Schottky type, where the internal energy, the volume, and the vibrational entropy of the crystal are assumed to be linear functions of the numbers of atoms or vacancies on the different sublattices. A Wagner-Schottky type model is used for the description of two examples with different crystal structures: for β'-FeAl (with B2-structure) defect concentrations and their variation with composition are derived from the results of measurements of the aluminum vapor pressure, the resulting values are compared with results of other independent experimental methods; for Rh 3 Te 4 (with an NiAs-derivative structure) the defect mechanism responsible for non-stoichiometry is worked out by application of a theoretical model to the results of tellurium vapor pressure measurements. In addition it is shown that the shape of the activity curve indicates a certain sequence of superstructures. In principle, there are no limitations to the application of statistical thermodynamics to experimental thermodynamic data as long as these are available with sufficient accuracy, and as long as it is ensured that the distribution of the point defects is truly random, i.e. that there are no aggregates of defects

  11. Understanding the effect of surface/bulk defects on the photocatalytic activity of TiO2: anatase versus rutile.

    Science.gov (United States)

    Yan, Junqing; Wu, Guangjun; Guan, Naijia; Li, Landong; Li, Zhuoxin; Cao, Xingzhong

    2013-07-14

    The sole effect of surface/bulk defects of TiO2 samples on their photocatalytic activity was investigated. Nano-sized anatase and rutile TiO2 were prepared by hydrothermal method and their surface/bulk defects were adjusted simply by calcination at different temperatures, i.e. 400-700 °C. High temperature calcinations induced the growth of crystalline sizes and a decrease in the surface areas, while the crystalline phase and the exposed facets were kept unchanged during calcination, as indicated by the characterization results from XRD, Raman, nitrogen adsorption-desorption, TEM and UV-Vis spectra. The existence of surface/bulk defects in calcined TiO2 samples was confirmed by photoluminescence and XPS spectra, and the surface/bulk defect ratio was quantitatively analyzed according to positron annihilation results. The photocatalytic activity of calcined TiO2 samples was evaluated in the photocatalytic reforming of methanol and the photocatalytic oxidation of α-phenethyl alcohol. Based on the characterization and catalytic results, a direct correlation between the surface specific photocatalytic activity and the surface/bulk defect density ratio could be drawn for both anatase TiO2 and rutile TiO2. The surface defects of TiO2, i.e. oxygen vacancy clusters, could promote the separation of electron-hole pairs under irradiation, and therefore, enhance the activity during photocatalytic reaction.

  12. Understanding and Calibrating Density-Functional-Theory Calculations Describing the Energy and Spectroscopy of Defect Sites in Hexagonal Boron Nitride.

    Science.gov (United States)

    Reimers, Jeffrey R; Sajid, A; Kobayashi, Rika; Ford, Michael J

    2018-03-13

    Defect states in 2-D materials present many possible uses but both experimental and computational characterization of their spectroscopic properties is difficult. We provide and compare results from 13 DFT and ab initio computational methods for up to 25 excited states of a paradigm system, the V N C B defect in hexagonal boron nitride (h-BN). Studied include: (i) potentially catastrophic effects for computational methods arising from the multireference nature of the closed-shell and open-shell states of the defect, which intrinsically involves broken chemical bonds, (ii) differing results from DFT and time-dependent DFT (TDDFT) calculations, (iii) comparison of cluster models to periodic-slab models of the defect, (iv) the starkly differing effects of nuclear relaxation on the various electronic states that control the widths of photoabsorption and photoemission spectra as broken bonds try to heal, (v) the effect of zero-point energy and entropy on free-energy differences, (vi) defect-localized and conduction/valence-band transition natures, and (vii) strategies needed to ensure that the lowest-energy state of a defect can be computationally identified. Averaged state-energy differences of 0.3 eV are found between CCSD(T) and MRCI energies, with thermal effects on free energies sometimes also being of this order. However, DFT-based methods can perform very poorly. Simple generalized-gradient functionals like PBE fail at the most basic level and should never be applied to defect states. Hybrid functionals like HSE06 work very well for excitations within the triplet manifold of the defect, with an accuracy equivalent to or perhaps exceeding the accuracy of the ab initio methods used. However, HSE06 underestimates triplet-state energies by on average of 0.7 eV compared to closed-shell singlet states, while open-shell singlet states are predicted to be too low in energy by 1.0 eV. This leads to misassignment of the ground state of the V N C B defect. Long

  13. Understanding the Effects of Defect Modification on the Structure and Properties of Fluorinated Polymers and Implications for Capacitive Energy Storage Technologies

    Science.gov (United States)

    Gadinski, Matthew R.

    single defects. These long runs are found to have dramatic effects on the distribution of chain conformations determined from FTIR, the melting temperature and total crystallinity determined by DSC, and the crystallite size, lattice spacing, and crystalline phase as determined by XRD. These results indicate that P(VDF-BTFE) has a mix of both included (single) and excluded defects (runs of defects) that rapidly inhibit crystallinity and alter phase. The dielectric analysis also confirmed this by a broadening of the Tg peak in the temperature dependent dielectric spectroscopy with increasing BTFE content in the monomer feed indicative of expansion of the interlamellar region due to defect exclusion. Chapter 3 explores P(VDF-BTFE) copolymers for capacitive energy storage. Due to the rapid decrease in crystallinity only low concentration copolymers (>2 mol %) BTFE were used. This was ultimately a result of stretching being required for high energy density to be exhibited. The 0.5 mol% BTFE copolymer samples was found to possess a discharge energy density of 20.8 J/cm 3 at 750 MV/m along with the highest breakdown strength of any reported PVDF based copolymer. It was found that for this small amount of defect monomer the gamma phase of PVDF was stabilized and mixed with beta phase and along with small crystallite size accounted for the high breakdown strength and energy density. Additionally, by utilizing only a small amount of defect monomer the decrease in crystallinity and melting temperature observed in previously examined PVDF copolymers was avoided. Chapter 4 examines a terpolymer of VDF, trifluoroethylene (TrFE), and chlorotrifluoroethylene (CTFE). The terpolymers of VDF have gained extensive interest as the use of the two defect monomer increases the dielectric constant to 40+ along with altering the polarization behavior from a normal ferroelectric to a relaxor ferroelectric characterized by a slim hysteresis loop. The current understanding of this behavior suggests

  14. Birth Defects

    Science.gov (United States)

    A birth defect is a problem that happens while a baby is developing in the mother's body. Most birth defects happen during the first 3 months of ... in the United States is born with a birth defect. A birth defect may affect how the ...

  15. Defect modelling

    International Nuclear Information System (INIS)

    Norgett, M.J.

    1980-01-01

    Calculations, drawing principally on developments at AERE Harwell, of the relaxation about lattice defects are reviewed with emphasis on the techniques required for such calculations. The principles of defect modelling are outlined and various programs developed for defect simulations are discussed. Particular calculations for metals, ionic crystals and oxides, are considered. (UK)

  16. Understand Your Risk for Heart Failure

    Science.gov (United States)

    ... Heart.org Arrhythmia About Arrhythmia Why Arrhythmia Matters Understand Your Risk for Arrhythmia Symptoms, Diagnosis & Monitoring of ... Heart Defects The Impact of Congenital Heart Defects Understand Your Risk for Congenital Heart Defects Symptoms & Diagnosis ...

  17. Defects and defect processes in nonmetallic solids

    CERN Document Server

    Hayes, W

    2004-01-01

    This extensive survey covers defects in nonmetals, emphasizing point defects and point-defect processes. It encompasses electronic, vibrational, and optical properties of defective solids, plus dislocations and grain boundaries. 1985 edition.

  18. Engineering Defect-Free Nanoporous Pd from Optimized Pd-Ni Precursor Alloy by Understanding Palladium-Hydrogen Interactions During Dealloying

    Science.gov (United States)

    Schoop, Julius; Balk, T. John

    2014-04-01

    Thin films of nanoporous palladium (np-Pd) were produced from binary palladium-nickel (Pd-Ni) precursor alloys. A suitable precursor alloy and a method of dealloying to yield optimum nanoporosity (average pore/ligament size of 7 nm) were developed by studying the effects of various processing parameters on final microstructure. To obtain crack-free np-Pd, a 100 nm thin film of 20 at. pct Pd (80 at. pct Ni) can be dealloyed for ~5 hours in a 1 M solution of sulfuric acid, with oleic acid and oleylamine added as surfactants. Both shorter and longer dealloying times, as well as heating, inhibit the formation of crack-free np-Pd. Stress measurements at different stages of dealloying revealed that the necessary dealloying time is determined by the diffusion-controlled corrosion reaction occurring within the thin film during dealloying. Strong interaction between hydrogen and np-Pd was reflected in the stress evolution during dealloying. A mechanism is proposed for the formation of a Ni-rich dense top layer that results from H-induced swelling during initial dealloying and permits the development of defect-free np-Pd beneath, by limiting the speed of dealloying.

  19. Embedded defects

    International Nuclear Information System (INIS)

    Barriola, M.; Vachaspati, T.; Bucher, M.

    1994-01-01

    We give a prescription for embedding classical solutions and, in particular, topological defects in field theories which are invariant under symmetry groups that are not necessarily simple. After providing examples of embedded defects in field theories based on simple groups, we consider the electroweak model and show that it contains the Z string and a one-parameter family of strings called the W(α) string. It is argued that although the members of this family are gauge equivalent when considered in isolation, each member becomes physically distinct when multistring configurations are considered. We then turn to the issue of stability of embedded defects and demonstrate the instability of a large class of such solutions in the absence of bound states or condensates. The Z string is shown to be unstable for all values of the Higgs boson mass when θ W =π/4. W strings are also shown to be unstable for a large range of parameters. Embedded monopoles suffer from the Brandt-Neri-Coleman instability. Finally, we connect the electroweak string solutions to the sphaleron

  20. Primary Radiation Damage in Materials. Review of Current Understanding and Proposed New Standard Displacement Damage Model to Incorporate in Cascade Defect Production Efficiency and Mixing Effects

    International Nuclear Information System (INIS)

    Nordlund, Kai; Sand, Andrea E.; Granberg, Fredric; Zinkle, Steven J.; Stoller, Roger; Averback, Robert S.; Suzudo, Tomoaki; Malerba, Lorenzo; Banhart, Florian; Weber, William J.; Willaime, Francois; Dudarev, Sergei; Simeone, David

    2015-01-01

    Under the auspices of the NEA Nuclear Science Committee (NSC), the Working Party on Multi-scale Modelling of Fuels and Structural Materials for Nuclear Systems (WPMM) was established in 2008 to assess the scientific and engineering aspects of fuels and structural materials, aiming at evaluating multi-scale models and simulations as validated predictive tools for the design of nuclear systems, fuel fabrication and performance. The WPMM's objective is to promote the exchange of information on models and simulations of nuclear materials, theoretical and computational methods, experimental validation, and related topics. It also provides member countries with up-to-date information, shared data, models and expertise. The WPMM Expert Group on Primary Radiation Damage (PRD) was established in 2009 to determine the limitations of the NRT-dpa standard, in the light of both atomistic simulations and known experimental discrepancies, to revisit the NRT-dpa standard and to examine the possibility of proposing a new improved standard of primary damage characteristics. This report reviews the current understanding of primary radiation damage from neutrons, ions and electrons (excluding photons, atomic clusters and more exotic particles), with emphasis on the range of validity of the 'displacement per atom' (dpa) concept in all major classes of materials with the exception of organics. The report also introduces an 'athermal recombination-corrected dpa' (arc-dpa) relation that uses a relatively simple functional to address the well-known issue that 'displacement per atom' (dpa) overestimates damage production in metals under energetic displacement cascade conditions, as well as a 'replacements-per-atom' (rpa) equation, also using a relatively simple functional, that accounts for the fact that dpa is understood to severely underestimate actual atom relocation (ion beam mixing) in metals. (authors)

  1. Facts about Birth Defects

    Science.gov (United States)

    ... label> Information For… Media Policy Makers Facts about Birth Defects Language: English (US) Español (Spanish) Recommend on ... having a baby born without a birth defect. Birth Defects Are Common Every 4 ½ minutes, a ...

  2. Neural Tube Defects

    Science.gov (United States)

    Neural tube defects are birth defects of the brain, spine, or spinal cord. They happen in the ... that she is pregnant. The two most common neural tube defects are spina bifida and anencephaly. In ...

  3. Predicting internal red oak (Quercus rubra) log defect features using surface defect defect measurements

    Science.gov (United States)

    R. Edward. Thomas

    2013-01-01

    Determining the defects located within a log is crucial to understanding the tree/log resource for efficient processing. However, existing means of doing this non-destructively requires the use of expensive x-ray/CT (computerized tomography), MRI (magnetic resonance imaging), or microwave technology. These methods do not lend themselves to fast, efficient, and cost-...

  4. Dipole defects in beryl

    International Nuclear Information System (INIS)

    Holanda, B A; Cordeiro, R C; Blak, A R

    2010-01-01

    Dipole defects in gamma irradiated and thermally treated beryl (Be 3 Al 2 Si 6 O 18 ) samples have been studied using the Thermally Stimulated Depolarization Currents (TSDC) technique. TSDC experiments were performed in pink (morganite), green (emerald), blue (aquamarine) and colourless (goshenite) natural beryl. TSDC spectra present dipole peaks at 190K, 220K, 280K and 310K that change after gamma irradiation and thermal treatments. In morganite samples, for thermal treatments between 700K and 1100K, the 280K peak increase in intensity and the band at 220K disappears. An increase of the 280K peak and a decrease of the 190K peak were observed in the TSDC spectra of morganite after a gamma irradiation of 25kGy performed after the thermal treatments. In the case of emerald samples, thermal treatments enhanced the 280K peak and gamma irradiation partially destroyed this band. The goshenite TSDC spectra present only one band at 280K that is not affected either by thermal treatments or by gamma irradiation. All the observed peaks are of dipolar origin because the intensity of the bands is linearly dependent on the polarization field, behaviour of dipole defects. The systematic study, by means of TSDC measurements, of ionizing irradiation effects and thermal treatments in these crystals makes possible a better understanding of the role played by the impurities in beryl crystals.

  5. Dual approaches for defects condensation

    Energy Technology Data Exchange (ETDEWEB)

    Rougemont, Romulo; Grigorio, Leonardo de Souza; Wotzasek, Clovis [Universidade Federal do Rio de Janeiro (UFRJ), RJ (Brazil); Guimaraes, Marcelo Santos [Universidade do Estado do Rio de Janeiro (UERJ), RJ (Brazil)

    2009-07-01

    Full text. Due to the fact that the QCD running coupling constant becomes larger as we go into the low energy (or large distance) limit of the theory, a perturbative treatment of its infrared (IR) region is impossible. In particular, a formal mathematical demonstration of color confinement and a complete physical understanding of the exact mechanism that confines quarks and gluons are two missing points in our current knowledge of the IR-QCD. It was known that due to the Meissner effect of expulsion of magnetic fields in a electric condensate that usual superconductors should confine magnetic monopoles. That point led to the conjecture that the QCD vacuum could be a condensate of chromomagnetic monopoles, a dual superconductor (DSC). Such a chromomagnetic condensate should be responsible for the dual Meissner effect which is expected to lead to the confinement of color charges immersed in this medium. In dual superconductor models of color confinement, magnetic monopoles appear as topological defects in points of the space where the abelian projection becomes singular. Also, condensation of other kinds of defects such as vortices in superfluids and line-like defects in solids are responsible for a great variety of phase transitions, which once more proves the relevance of the subject. In the present work we review two methods that allow us to approach the condensation of defects: the Kleinert Mechanism (KM) and the Julia-Toulouse Mechanism (JTM). We show that in the limit where the vortex gauge field goes to zero, which we identify as the signature of the condensation of defects in the dual picture, these are two equivalent dual prescriptions for obtaining an effective theory for a phase where defects are condensed, starting from the fundamental theory defined in the normal phase where defects are diluted. (author)

  6. Craniotomy Frontal Bone Defect

    African Journals Online (AJOL)

    2018-03-01

    Mar 1, 2018 ... Defect reconstruction and fixation of the graft: The defect of ... where all loose fragments of fractured frontal bone was removed via the ... Mandible. • Ilium. • Allograft ... pediatric patients owing to skull growth. Thus, autologous ...

  7. Congenital platelet function defects

    Science.gov (United States)

    ... pool disorder; Glanzmann's thrombasthenia; Bernard-Soulier syndrome; Platelet function defects - congenital ... Congenital platelet function defects are bleeding disorders that cause reduced platelet function. Most of the time, people with these disorders have ...

  8. Defect of the Eyelids.

    Science.gov (United States)

    Lu, Guanning Nina; Pelton, Ron W; Humphrey, Clinton D; Kriet, John David

    2017-08-01

    Eyelid defects disrupt the complex natural form and function of the eyelids and present a surgical challenge. Detailed knowledge of eyelid anatomy is essential in evaluating a defect and composing a reconstructive plan. Numerous reconstructive techniques have been described, including primary closure, grafting, and a variety of local flaps. This article describes an updated reconstructive ladder for eyelid defects that can be used in various permutations to solve most eyelid defects. Copyright © 2017 Elsevier Inc. All rights reserved.

  9. The role of defects in laser damage of multilayer coatings

    International Nuclear Information System (INIS)

    Kozlowski, M.R.; Chow, R.

    1993-01-01

    Laser induced damage to optical coatings is generally a localized phenomenon associated with coating defects. The most common of the defect types are the well-known nodule defect. This paper reviews the use of experiments and modeling to understand the formation of these defects and their interaction with laser light. Of particular interest are efforts to identify which defects are most susceptible to laser damage. Also discussed are possible methods for stabilizing these defects (laser conditioning) or preventing their initiation (source stabilization, spatter particle trapping)

  10. Point defects in solids

    International Nuclear Information System (INIS)

    Anon.

    1978-01-01

    The principal properties of point defects are studied: thermodynamics, electronic structure, interactions with etended defects, production by irradiation. Some measuring methods are presented: atomic diffusion, spectroscopic methods, diffuse scattering of neutron and X rays, positron annihilation, molecular dynamics. Then points defects in various materials are investigated: ionic crystals, oxides, semiconductor materials, metals, intermetallic compounds, carbides, nitrides [fr

  11. Fibrous metaphyseal defects

    International Nuclear Information System (INIS)

    Ritschl, P.; Hajek, P.C.; Pechmann, U.

    1989-01-01

    Sixteen patients with fibrous metaphyseal defects were examined with both plain radiography and magnetic resonance (MR) imaging. Depending on the age of the fibrous metaphyseal defects, characteristic radiomorphologic changes were found which correlated well with MR images. Following intravenous Gadolinium-DTPA injection, fibrous metaphyseal defects invariably exhibited a hyperintense border and signal enhancement. (orig./GDG)

  12. Birth Defects (For Parents)

    Science.gov (United States)

    ... Staying Safe Videos for Educators Search English Español Birth Defects KidsHealth / For Parents / Birth Defects What's in ... Prevented? Print en español Anomalías congénitas What Are Birth Defects? While still in the womb, some babies ...

  13. Impurity Role In Mechanically Induced Defects

    International Nuclear Information System (INIS)

    Howell, R.H.; Asoka-Kumar, P.; Hartley, J.; Sterne, P.

    2000-01-01

    An improved understanding of dislocation dynamics and interactions is an outstanding problem in the multi scale modeling of materials properties, and is the current focus of major theoretical efforts world wide. We have developed experimental and theoretical tools that will enable us to measure and calculate quantities defined by the defect structure. Unique to the measurements is a new spectroscopy that determines the detailed elemental composition at the defect site. The measurements are based on positron annihilation spectroscopy performed with a 3 MeV positron beam [1]. Positron annihilation spectroscopy is highly sensitive to dislocations and associated defects and can provide unique elements of the defect size and structure. Performing this spectroscopy with a highly penetrating positron beam enables flexibility in sample handling. Experiments on fatigued and stressed samples have been done and in situ measurement capabilities have been developed. We have recently performed significant upgrades to the accelerator operation and novel new experiments have been performed [2-4] To relate the spectrographic results and the detailed structure of a defect requires detailed calculations. Measurements are coupled with calculated results based on a description of positions of atoms at the defect. This gives an atomistic view of dislocations and associated defects including impurity interactions. Our ability to probe impurity interactions is a unique contribution to defect understanding not easily addressed by other atomistic spectroscopies

  14. Dirichlet topological defects

    International Nuclear Information System (INIS)

    Carroll, S.M.; Trodden, M.

    1998-01-01

    We propose a class of field theories featuring solitonic solutions in which topological defects can end when they intersect other defects of equal or higher dimensionality. Such configurations may be termed open-quotes Dirichlet topological defects,close quotes in analogy with the D-branes of string theory. Our discussion focuses on defects in scalar field theories with either gauge or global symmetries, in 3+1 dimensions; the types of defects considered include walls ending on walls, strings on walls, and strings on strings. copyright 1998 The American Physical Society

  15. Synthetic Defects for Vibrothermography

    Science.gov (United States)

    Renshaw, Jeremy; Holland, Stephen D.; Thompson, R. Bruce; Eisenmann, David J.

    2010-02-01

    Synthetic defects are an important tool used for characterizing the performance of nondestructive evaluation techniques. Viscous material-filled synthetic defects were developed for use in vibrothermography (also known as sonic IR) as a tool to improve inspection accuracy and reliability. This paper describes how the heat-generation response of these VMF synthetic defects is similar to the response of real defects. It also shows how VMF defects can be applied to improve inspection accuracy for complex industrial parts and presents a study of their application in an aircraft engine stator vane.

  16. Defect production in ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Zinkle, S.J. [Oak Ridge National Lab., TN (United States); Kinoshita, C. [Kyushu Univ. (Japan)

    1997-08-01

    A review is given of several important defect production and accumulation parameters for irradiated ceramics. Materials covered in this review include alumina, magnesia, spinel silicon carbide, silicon nitride, aluminum nitride and diamond. Whereas threshold displacement energies for many ceramics are known within a reasonable level of uncertainty (with notable exceptions being AIN and Si{sub 3}N{sub 4}), relatively little information exists on the equally important parameters of surviving defect fraction (defect production efficiency) and point defect migration energies for most ceramics. Very little fundamental displacement damage information is available for nitride ceramics. The role of subthreshold irradiation on defect migration and microstructural evolution is also briefly discussed.

  17. On holographic defect entropy

    International Nuclear Information System (INIS)

    Estes, John; Jensen, Kristan; O’Bannon, Andy; Tsatis, Efstratios; Wrase, Timm

    2014-01-01

    We study a number of (3+1)- and (2+1)-dimensional defect and boundary conformal field theories holographically dual to supergravity theories. In all cases the defects or boundaries are planar, and the defects are codimension-one. Using holography, we compute the entanglement entropy of a (hemi-)spherical region centered on the defect (boundary). We define defect and boundary entropies from the entanglement entropy by an appropriate background subtraction. For some (3+1)-dimensional theories we find evidence that the defect/boundary entropy changes monotonically under certain renormalization group flows triggered by operators localized at the defect or boundary. This provides evidence that the g-theorem of (1+1)-dimensional field theories generalizes to higher dimensions

  18. Genital and Urinary Tract Defects

    Science.gov (United States)

    ... conditions > Genital and urinary tract defects Genital and urinary tract defects E-mail to a friend Please fill ... and extra fluids. What problems can genital and urinary tract defects cause? Genital and urinary tract defects affect ...

  19. Teratology: from science to birth defects prevention.

    Science.gov (United States)

    Rasmussen, Sonja A; Erickson, J David; Reef, Susan E; Ross, Danielle S

    2009-01-01

    One of the goals of birth defects research is to better understand risk or preventive factors for birth defects so that strategies for prevention can be developed. In this article, we have selected four areas of birth defects research that have led to the development of prevention strategies. These areas include rubella virus as a cause of congenital rubella syndrome, folic acid as a preventive factor for neural tube defects, cytomegalovirus infection as a cause of birth defects and developmental disabilities, and alcohol as a cause of fetal alcohol spectrum disorders. For each of these areas, we review key clinical and research findings that led to the identification of the risk or preventive factor, milestones in the development of prevention strategies, and the progress made thus far toward prevention.

  20. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  1. Teaching Teaching & Understanding Understanding

    DEFF Research Database (Denmark)

    2006-01-01

    "Teaching Teaching & Understanding Understanding" is a 19-minute award-winning short-film about teaching at university and higher-level educational institutions. It is based on the "Constructive Alignment" theory developed by Prof. John Biggs. The film delivers a foundation for understanding what...

  2. Defect Structure of Localized Excitons in a WSe2 Monolayer

    KAUST Repository

    Zhang, Shuai

    2017-07-26

    The atomic and electronic structure of intrinsic defects in a WSe2 monolayer grown on graphite was revealed by low temperature scanning tunneling microscopy and spectroscopy. Instead of chalcogen vacancies that prevail in other transition metal dichalcogenide materials, intrinsic defects in WSe2 arise surprisingly from single tungsten vacancies, leading to the hole (p-type) doping. Furthermore, we found these defects to dominate the excitonic emission of the WSe2 monolayer at low temperature. Our work provided the first atomic-scale understanding of defect excitons and paved the way toward deciphering the defect structure of single quantum emitters previously discovered in the WSe2 monolayer.

  3. Metallography of defects

    International Nuclear Information System (INIS)

    Borisova, E.A.; Bochvar, G.A.; Brun, M.Ya.

    1980-01-01

    Different types of defects of metallurgical, technological and exploitation origin in intermediate and final products of titanium alloys, are considered. The examples of metallic and nonmetallic inclusions, chemical homogeneity, different grains, bands, cracks, places of searing, porosity are given; methods of detecting the above defects are described. The methods of metallography, X-ray spectral analysis, measuring microhardness are used

  4. Beating Birth Defects

    Centers for Disease Control (CDC) Podcasts

    Each year in the U.S., one in 33 babies is affected by a major birth defect. Women can greatly improve their chances of giving birth to a healthy baby by avoiding some of the risk factors for birth defects before and during pregnancy. In this podcast, Dr. Stuart Shapira discusses ways to improve the chances of giving birth to a healthy baby.

  5. Defects at oxide surfaces

    CERN Document Server

    Thornton, Geoff

    2015-01-01

    This book presents the basics and characterization of defects at oxide surfaces. It provides a state-of-the-art review of the field, containing information to the various types of surface defects, describes analytical methods to study defects, their chemical activity and the catalytic reactivity of oxides. Numerical simulations of defective structures complete the picture developed. Defects on planar surfaces form the focus of much of the book, although the investigation of powder samples also form an important part. The experimental study of planar surfaces opens the possibility of applying the large armoury of techniques that have been developed over the last half-century to study surfaces in ultra-high vacuum. This enables the acquisition of atomic level data under well-controlled conditions, providing a stringent test of theoretical methods. The latter can then be more reliably applied to systems such as nanoparticles for which accurate methods of characterization of structure and electronic properties ha...

  6. Defects in dilute nitrides

    International Nuclear Information System (INIS)

    Chen, W.M.; Buyanova, I.A.; Tu, C.W.; Yonezu, H.

    2005-01-01

    We provide a brief review our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as As Ga antisites and Ga i self interstitials were positively identified.Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides. (author)

  7. Human diseases associated with defective DNA repair

    International Nuclear Information System (INIS)

    Friedberg, E.C.; Ehmann, U.K.; Williams, J.I.

    1979-01-01

    The observations on xeroderma pigmentosum (XP) cells in culture were the first indications of defective DNA repair in association with human disease. Since then, a wealth of information on DNA repair in XP, and to a lesser extent in other diseases, has accumulated in the literature. Rather than clarifying the understanding of DNA repair mechanisms in normal cells and of defective DNA repair in human disease, the literature suggests an extraordinary complexity of both of the phenomena. In this review a number of discrete human diseases are considered separately. An attempt was made to systematically describe the pertinent clinical features and cellular and biochemical defects in these diseases, with an emphasis on defects in DNA metabolism, particularly DNA repair. Wherever possible observations have been correlated and unifying hypotheses presented concerning the nature of the basic defect(s) in these diseases. Discussions of the following diseases are presented: XP, ataxia telangiectasia; Fanconi's anemia; Hutchinson-Gilford progeria syndrome; Bloom's syndrome, Cockayne's syndrome; Down's syndrome; retinoblastoma; chronic lymphocytic leukemia; and other miscellaneous human diseases with possble DNA repair defects

  8. Defect Chemistry of Oxides for Energy Applications.

    Science.gov (United States)

    Schweke, Danielle; Mordehovitz, Yuval; Halabi, Mahdi; Shelly, Lee; Hayun, Shmuel

    2018-05-31

    Oxides are widely used for energy applications, as solid electrolytes in various solid oxide fuel cell devices or as catalysts (often associated with noble metal particles) for numerous reactions involving oxidation or reduction. Defects are the major factors governing the efficiency of a given oxide for the above applications. In this paper, the common defects in oxide systems and external factors influencing the defect concentration and distribution are presented, with special emphasis on ceria (CeO 2 ) based materials. It is shown that the behavior of a variety of oxide systems with respect to properties relevant for energy applications (conductivity and catalytic activity) can be rationalized by general considerations about the type and concentration of defects in the specific system. A new method based on transmission electron microscopy (TEM), recently reported by the authors for mapping space charge defects and measuring space charge potentials, is shown to be of potential importance for understanding conductivity mechanisms in oxides. The influence of defects on gas-surface reactions is exemplified on the interaction of CO 2 and H 2 O with ceria, by correlating between the defect distribution in the material and its adsorption capacity or splitting efficiency. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Formation of topological defects

    International Nuclear Information System (INIS)

    Vachaspati, T.

    1991-01-01

    We consider the formation of point and line topological defects (monopoles and strings) from a general point of view by allowing the probability of formation of a defect to vary. To investigate the statistical properties of the defects at formation we give qualitative arguments that are independent of any particular model in which such defects occur. These arguments are substantiated by numerical results in the case of strings and for monopoles in two dimensions. We find that the network of strings at formation undergoes a transition at a certain critical density below which there are no infinite strings and the closed-string (loop) distribution is exponentially suppressed at large lengths. The results are contrasted with the results of statistical arguments applied to a box of strings in dynamical equilibrium. We argue that if point defects were to form with smaller probability, the distance between monopoles and antimonopoles would decrease while the monopole-to-monopole distance would increase. We find that monopoles are always paired with antimonopoles but the pairing becomes clean only when the number density of defects is small. A similar reasoning would also apply to other defects

  10. Defect-impurity interactions in ion-implanted metals

    International Nuclear Information System (INIS)

    Turos, A.

    1986-01-01

    An overview of defect-impurity interactions in metals is presented. When point defects become mobile they migrate towards the sinks and on the way can be captured by impurity atoms forming stable associations so-called complexes. In some metallic systems complexes can also be formed athermally during ion implantation by trapping point defects already in the collision cascade. An association of a point defect with an impurity atom leads to its displacement from the lattice site. The structure and stability of complexes are strongly temperature dependent. With increasing temperature they dissociate or grow by multiple defect trapping. The appearance of freely migrating point defects at elevated temperatures, due to ion bombardment or thermal annealing, causes via coupling with defect fluxes, important impurity redistribution. Because of the sensitivity of many metal-in-metal implanted systems to radiation damage the understanding of this processes is essential for a proper interpretation of the lattice occupancy measurements and the optimization of implantation conditions. (author)

  11. Ventricular Septal Defect (VSD)

    Science.gov (United States)

    ... Call your doctor if your baby or child: Tires easily when eating or playing Is not gaining ... heart procedures. Risk factors Ventricular septal defects may run in families and sometimes may occur with other ...

  12. Birth Defects: Cerebral Palsy

    Science.gov (United States)

    ... Loss > Birth defects & other health conditions > Cerebral palsy Cerebral palsy E-mail to a friend Please fill in ... this page It's been added to your dashboard . Cerebral palsy (also called CP) is a group of conditions ...

  13. Endocardial cushion defect

    Science.gov (United States)

    ... Philadelphia, PA: Elsevier; 2016:chap 426. Kouchoukos NT, Blackstone EH, Hanley FL, Kirklin JK. Atrioventricular septal defect. In: Kouchoukos NT, Blackstone EH, Hanley FL, Kirklin JK, eds. Kirklin/Barratt- ...

  14. Repairing Nanoparticle Surface Defects

    NARCIS (Netherlands)

    Marino, Emanuele; Kodger, Thomas E.; Crisp, R.W.; Timmerman, Dolf; MacArthur, Katherine E.; Heggen, Marc; Schall, Peter

    2017-01-01

    Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We

  15. Point defects in platinum

    International Nuclear Information System (INIS)

    Piercy, G.R.

    1960-01-01

    An investigation was made of the mobility and types of point defect introduced in platinum by deformation in liquid nitrogen, quenching into water from 1600 o C, or reactor irradiation at 50 o C. In all cases the activation energy for motion of the defect was determined from measurements of electrical resistivity. Measurements of density, hardness, and x-ray line broadening were also made there applicable. These experiments indicated that the principal defects remaining in platinum after irradiation were single vacant lattice sites and after quenching were pairs of vacant lattice sites. Those present after deformation In liquid nitrogen were single vacant lattice sites and another type of defect, perhaps interstitial atoms. (author)

  16. Breakdown, fractoemission, diffusion: role of defects in dielectrics

    International Nuclear Information System (INIS)

    Vigouroux, J.P.; Serruys, Y.

    1987-01-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  17. Pullout Performances of Grouted Rockbolt Systems with Bond Defects

    Science.gov (United States)

    Xu, Chang; Li, Zihan; Wang, Shanyong; Wang, Shuren; Fu, Lei; Tang, Chunan

    2018-03-01

    This paper presents a numerical study on the pullout behaviour of fully grouted rockbolts with bond defects. The cohesive zone model (CZM) is adopted to model the bond-slip behaviour between the rockbolt and grout material. Tensile tests were also conducted to validate the numerical model. The results indicate that the defect length can obviously influence the load and stress distributions along the rockbolt as well as the load-displacement response of the grouted system. Moreover, a plateau in the stress distribution forms due to the bond defect. The linear limit and peak load of the load-displacement response decrease as the defect length increases. A bond defect located closer to the loaded end leads to a longer nonlinear stage in the load-displacement response. However, the peak loads measured from the specimens made with various defect locations are almost approximately the same. The peak load for a specimen with the defects equally spaced along the bolt is higher than that for a specimen with defects concentrated in a certain zone, even with the same total defect length. Therefore, the dispersed pattern of bond defects would be much safer than the concentrated pattern. For the specimen with dispersed defects, the peak load increases with an increase in the defect spacing, even if the total defect length is the same. The peak load for a grouted rockbolt system with defects increases with an increases in the bolt diameter. This work leads to a better understanding of the load transfer mechanism for grouted rockbolt systems with bond defects, and paves the way towards developing a general evaluation method for damaged rockbolt grouted systems.

  18. Electronic structure of point defects in semiconductors

    International Nuclear Information System (INIS)

    Bruneval, Fabien

    2014-01-01

    This 'Habilitation a diriger des Recherches' memoir presents most of my scientific activities during the past 7 years, in the field of electronic structure calculations of defects in solids. Point defects (vacancies, interstitials, impurities) in functional materials are a key parameter to determine if these materials will actually fill the role they have been assigned or not. Indeed, the presence of defects cannot be avoided when the temperature is increased or when the material is subjected to external stresses, such as irradiation in the nuclear reactors and in artificial satellites with solar radiations. However, in many cases, defects are introduced in the materials on purpose to tune the electronic transport, optical or even magnetic properties. This procedure is called the doping of semiconductors, which is the foundation technique for transistors, diodes, or photovoltaic cells. However, doping is not always straightforward and unexpected features may occur, such as doping asymmetry or Fermi level pinning, which can only be explained by complex phenomena involving different types of defects or complexes of defects. In this context, the calculations of electronic structure ab initio is an ideal tool to complement the experimental observations, to gain the understanding of phenomena at the atomic level, and even to predict the properties of defects. The power of the ab initio calculations comes from their ability to describe any system of electrons and nuclei without any specific adjustment. But although there is a strong need for numerical simulations in this field, the ab initio calculations for defects are still under development as of today. The work presented in this memoir summarizes my contributions to methodological developments on this subject. These developments have followed two main tracks. The first topic is the better understanding of the unavoidable finite size effects. Indeed, defects in semiconductors or insulators are generally present in

  19. Norwegian Pitched Roof Defects

    Directory of Open Access Journals (Sweden)

    Lars Gullbrekken

    2016-06-01

    Full Text Available The building constructions investigated in this work are pitched wooden roofs with exterior vertical drainpipes and wooden load-bearing system. The aim of this research is to further investigate the building defects of pitched wooden roofs and obtain an overview of typical roof defects. The work involves an analysis of the building defect archive from the research institute SINTEF Building and Infrastructure. The findings from the SINTEF archive show that moisture is a dominant exposure factor, especially in roof constructions. In pitched wooden roofs, more than half of the defects are caused by deficiencies in design, materials, or workmanship, where these deficiencies allow moisture from precipitation or indoor moisture into the structure. Hence, it is important to increase the focus on robust and durable solutions to avoid defects both from exterior and interior moisture sources in pitched wooden roofs. Proper design of interior ventilation and vapour retarders seem to be the main ways to control entry from interior moisture sources into attic and roof spaces.

  20. Observation of defects evolution in electronic materials

    Science.gov (United States)

    Jang, Jung Hun

    Advanced characterization techniques have been used to obtain a better understanding of the microstructure of electronic materials. The structural evolution, especially defects, has been investigated during the film growth and post-growth processes. Obtaining the relation between the defect evolution and growth/post-growth parameters is very important to obtain highly crystalline films. In this work, the growth and post-growth related defects in GaN, ZnO, strained-Si/SiGe films have been studied using several advanced characterization techniques. First of all, the growth of related defects in GaN and p-type ZnO films have been studied. The effect of growth parameters, such as growth temperature, gas flow rate, dopants used during the deposition, on the crystalline quality of the GaN and ZnO layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). In GaN films, it was found that the edge and mixed type threading dislocations were the dominant defects so that the only relevant figure of merit (FOM) for the crystalline quality should be the FWHM value of o-RC of the surface perpendicular plane which could be determined by a grazing incidence x-ray diffraction (GIXD) technique as shown in this work. The understanding of the relationship between the defect evolution and growth parameters allowed for the growth of high crystalline GaN films. For ZnO films, it was found that the degree of texture and crystalline quality of P-doped ZnO films decreased with increasing the phosphorus atomic percent. In addition, the result from the x-ray diffraction line profile analysis showed that the 0.5 at % P-doped ZnO film showed much higher microstrain than the 1.0 at % P-doped ZnO film, which indicated that the phosphorus atoms were segregated with increasing P atomic percentage. Finally, post-growth related defects in strained-Si/SiGe films were investigated. Postgrowth processes used in this work included high temperature N2

  1. Repairing Nanoparticle Surface Defects.

    Science.gov (United States)

    Marino, Emanuele; Kodger, Thomas E; Crisp, Ryan W; Timmerman, Dolf; MacArthur, Katherine E; Heggen, Marc; Schall, Peter

    2017-10-23

    Solar devices based on semiconductor nanoparticles require the use of conductive ligands; however, replacing the native, insulating ligands with conductive metal chalcogenide complexes introduces structural defects within the crystalline nanostructure that act as traps for charge carriers. We utilized atomically thin semiconductor nanoplatelets as a convenient platform for studying, both microscopically and spectroscopically, the development of defects during ligand exchange with the conductive ligands Na 4 SnS 4 and (NH 4 ) 4 Sn 2 S 6 . These defects can be repaired via mild chemical or thermal routes, through the addition of L-type ligands or wet annealing, respectively. This results in a higher-quality, conductive, colloidally stable nanomaterial that may be used as the active film in optoelectronic devices. © 2017 The Authors. Published by Wiley-VCH Verlag GmbH & Co. KGaA.

  2. Defect identification using positrons

    International Nuclear Information System (INIS)

    Beling, C.D.; Fung, S.

    2001-01-01

    The current use of the lifetime and Doppler broadening techniques in defect identification is demonstrated with two studies, the first being the identification of carbon vacancy in n-6H SiC through lifetime spectroscopy, and the second the production of de-hydrogenated voids in α-Si:H through light soaking. Some less conventional ideas are presented for more specific defect identification, namely (i) the amalgamation of lifetime and Doppler techniques with conventional deep level transient spectroscopy in what may be called ''positron-deep level transient spectroscopy'', and (ii) the extraction of more spatial information on vacancy defects by means of what may be called ''Fourier transform Doppler broadening of annihilation radiation spectroscopy'' (orig.)

  3. Quantum computing with defects

    Science.gov (United States)

    Varley, Joel

    2011-03-01

    The development of a quantum computer is contingent upon the identification and design of systems for use as qubits, the basic units of quantum information. One of the most promising candidates consists of a defect in diamond known as the nitrogen-vacancy (NV-1) center, since it is an individually-addressable quantum system that can be initialized, manipulated, and measured with high fidelity at room temperature. While the success of the NV-1 stems from its nature as a localized ``deep-center'' point defect, no systematic effort has been made to identify other defects that might behave in a similar way. We provide guidelines for identifying other defect centers with similar properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate systems. To elucidate these points, we compare electronic structure calculations of the NV-1 center in diamond with those of several deep centers in 4H silicon carbide (SiC). Using hybrid functionals, we report formation energies, configuration-coordinate diagrams, and defect-level diagrams to compare and contrast the properties of these defects. We find that the NC VSi - 1 center in SiC, a structural analog of the NV-1 center in diamond, may be a suitable center with very different optical transition energies. We also discuss how the proposed criteria can be translated into guidelines to discover NV analogs in other tetrahedrally coordinated materials. This work was performed in collaboration with J. R. Weber, W. F. Koehl, B. B. Buckley, A. Janotti, C. G. Van de Walle, and D. D. Awschalom. This work was supported by ARO, AFOSR, and NSF.

  4. Paediatric post-traumatic cortical defects of the distal radius

    International Nuclear Information System (INIS)

    Roach, Richard T.; Summers, Bruce N.; Cassar-Pullicino, Victor

    2002-01-01

    Paediatric post-traumatic cortical defects, although rare, are predominately seen affecting the distal radius following a greenstick or torus fracture. We review the literature and present a further two cases supported by CT and MRI. Images from an acute greenstick fracture are also presented to help understand the pathogenesis. Defects are typically solitary on plain radiographs and are usually noticed late, proximal to the site of compression. They are non-expansile in an otherwise healthy child. CT and MRI may reveal smaller multiple subperiosteal defects. Typical defects require no further management other than reassurance and advice that they may occasionally cause discomfort but resolve with time. (orig.)

  5. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  6. Defect detection module

    International Nuclear Information System (INIS)

    Ernwein, R.; Westermann, G.

    1986-01-01

    The ''defect detector'' module is aimed at exceptional event or state recording. Foreseen for voltage presence monitoring on high supply voltage module of drift chambers, its characteristics can also show up the vanishing of supply voltage and take in account transitory fast signals [fr

  7. Quantum computing with defects.

    Science.gov (United States)

    Weber, J R; Koehl, W F; Varley, J B; Janotti, A; Buckley, B B; Van de Walle, C G; Awschalom, D D

    2010-05-11

    Identifying and designing physical systems for use as qubits, the basic units of quantum information, are critical steps in the development of a quantum computer. Among the possibilities in the solid state, a defect in diamond known as the nitrogen-vacancy (NV(-1)) center stands out for its robustness--its quantum state can be initialized, manipulated, and measured with high fidelity at room temperature. Here we describe how to systematically identify other deep center defects with similar quantum-mechanical properties. We present a list of physical criteria that these centers and their hosts should meet and explain how these requirements can be used in conjunction with electronic structure theory to intelligently sort through candidate defect systems. To illustrate these points in detail, we compare electronic structure calculations of the NV(-1) center in diamond with those of several deep centers in 4H silicon carbide (SiC). We then discuss the proposed criteria for similar defects in other tetrahedrally coordinated semiconductors.

  8. Polydispersity-driven topological defects as order-restoring excitations.

    Science.gov (United States)

    Yao, Zhenwei; Olvera de la Cruz, Monica

    2014-04-08

    The engineering of defects in crystalline matter has been extensively exploited to modify the mechanical and electrical properties of many materials. Recent experiments on manipulating extended defects in graphene, for example, show that defects direct the flow of electric charges. The fascinating possibilities offered by defects in two dimensions, known as topological defects, to control material properties provide great motivation to perform fundamental investigations to uncover their role in various systems. Previous studies mostly focus on topological defects in 2D crystals on curved surfaces. On flat geometries, topological defects can be introduced via density inhomogeneities. We investigate here topological defects due to size polydispersity on flat surfaces. Size polydispersity is usually an inevitable feature of a large variety of systems. In this work, simulations show well-organized induced topological defects around an impurity particle of a wrong size. These patterns are not found in systems of identical particles. Our work demonstrates that in polydispersed systems topological defects play the role of restoring order. The simulations show a perfect hexagonal lattice beyond a small defective region around the impurity particle. Elasticity theory has demonstrated an analogy between the elementary topological defects named disclinations to electric charges by associating a charge to a disclination, whose sign depends on the number of its nearest neighbors. Size polydispersity is shown numerically here to be an essential ingredient to understand short-range attractions between like-charge disclinations. Our study suggests that size polydispersity has a promising potential to engineer defects in various systems including nanoparticles and colloidal crystals.

  9. Congenital Heart Defects (For Parents)

    Science.gov (United States)

    ... to be associated with genetic disorders, such as Down syndrome . But the cause of most congenital heart defects isn't known. While they can't be prevented, many treatments are available for the defects and related health ...

  10. Antigravity from a spacetime defect

    OpenAIRE

    Klinkhamer, F. R.; Queiruga, J. M.

    2018-01-01

    We argue that there may exist spacetime defects embedded in Minkowski spacetime, which have negative active gravitational mass. One such spacetime defect then repels a test particle, corresponding to what may be called "antigravity."

  11. Studies of defects and defect agglomerates by positron annihilation spectroscopy

    DEFF Research Database (Denmark)

    Eldrup, Morten Mostgaard; Singh, B.N.

    1997-01-01

    A brief introduction to positron annihilation spectroscopy (PAS), and in particular lo its use for defect studies in metals is given. Positrons injected into a metal may become trapped in defects such as vacancies, vacancy clusters, voids, bubbles and dislocations and subsequently annihilate from...... the trapped state iri the defect. The annihilation characteristics (e.g., the lifetime of the positron) can be measured and provide information about the nature of the defect (e.g., size, density, morphology). The technique is sensitive to both defect size (in the range from monovacancies up to cavities...

  12. Congenital Heart Defects and CCHD

    Science.gov (United States)

    ... and more. Stony Point, NY 10980 Close X Home > Complications & Loss > Birth defects & other health conditions > Congenital heart defects and ... in congenital heart defects. You have a family history of congenital heart ... syndrome or VCF. After birth Your baby may be tested for CCHD as ...

  13. Immobile defects in ferroelastic walls: Wall nucleation at defect sites

    Science.gov (United States)

    He, X.; Salje, E. K. H.; Ding, X.; Sun, J.

    2018-02-01

    Randomly distributed, static defects are enriched in ferroelastic domain walls. The relative concentration of defects in walls, Nd, follows a power law distribution as a function of the total defect concentration C: N d ˜ C α with α = 0.4 . The enrichment Nd/C ranges from ˜50 times when C = 10 ppm to ˜3 times when C = 1000 ppm. The resulting enrichment is due to nucleation at defect sites as observed in large scale MD simulations. The dynamics of domain nucleation and switching is dependent on the defect concentration. Their energy distribution follows the power law with exponents during yield between ɛ ˜ 1.82 and 2.0 when the defect concentration increases. The power law exponent is ɛ ≈ 2.7 in the plastic regime, independent of the defect concentration.

  14. Benign gastric filling defect

    International Nuclear Information System (INIS)

    Oh, K. K.; Lee, Y. H.; Cho, O. K.; Park, C. Y.

    1979-01-01

    The gastric lesion is a common source of complaints to Orientals, however, evaluation of gastric symptoms and laboratory examination offer little specific aid in the diagnosis of gastric diseases. Thus roentgenography of gastrointestinal tract is one of the most reliable method for detail diagnosis. On double contract study of stomach, gastric filling defect is mostly caused by malignant gastric cancer, however, other benign lesions can cause similar pictures which can be successfully treated by surgery. 66 cases of benign causes of gastric filling defect were analyzed at this point of view, which was verified pathologically by endoscope or surgery during recent 7 years in Yensei University College of Medicine, Severance Hospital. The characteristic radiological picture of each disease was discussed for precise radiologic diagnosis. 1. Of total 66 cases, there were 52 cases of benign gastric tumor 10 cases of gastric varices, 5 cases of gastric bezoar, 5 cases of corrosive gastritis, 3 cases of granulomatous disease and one case of gastric hematoma. 2. The most frequent causes of benign tumors were adenomatous polyp (35/42) and the next was leiomyoma (4/42). Others were one of case of carcinoid, neurofibroma and cyst. 3. Characteristic of benign adenomatous polyp were relatively small in size, smooth surface and were observed that large size, benign polyp was frequently type IV lesion with a stalk. 4. Submucosal tumors such as leiomyoma needed differential diagnosis with polypoid malignant cancer. However, the characteristic points of differentiation was well circumscribed smooth margined filling defect without definite mucosal destruction on surface. 5. Gastric varices showed multiple lobulated filling defected especially on gastric fundus that changed its size and shape by respiration and posture of patients. Same varices lesions on esophagus and history of liver disease were helpful for easier diagnosis. 6. Gastric bezoar showed well defined movable mass

  15. Benign gastric filling defect

    Energy Technology Data Exchange (ETDEWEB)

    Oh, K. K.; Lee, Y. H.; Cho, O. K.; Park, C. Y. [Yonsei University College of Medicine, Seoul (Korea, Republic of)

    1979-06-15

    The gastric lesion is a common source of complaints to Orientals, however, evaluation of gastric symptoms and laboratory examination offer little specific aid in the diagnosis of gastric diseases. Thus roentgenography of gastrointestinal tract is one of the most reliable method for detail diagnosis. On double contract study of stomach, gastric filling defect is mostly caused by malignant gastric cancer, however, other benign lesions can cause similar pictures which can be successfully treated by surgery. 66 cases of benign causes of gastric filling defect were analyzed at this point of view, which was verified pathologically by endoscope or surgery during recent 7 years in Yensei University College of Medicine, Severance Hospital. The characteristic radiological picture of each disease was discussed for precise radiologic diagnosis. 1. Of total 66 cases, there were 52 cases of benign gastric tumor 10 cases of gastric varices, 5 cases of gastric bezoar, 5 cases of corrosive gastritis, 3 cases of granulomatous disease and one case of gastric hematoma. 2. The most frequent causes of benign tumors were adenomatous polyp (35/42) and the next was leiomyoma (4/42). Others were one of case of carcinoid, neurofibroma and cyst. 3. Characteristic of benign adenomatous polyp were relatively small in size, smooth surface and were observed that large size, benign polyp was frequently type IV lesion with a stalk. 4. Submucosal tumors such as leiomyoma needed differential diagnosis with polypoid malignant cancer. However, the characteristic points of differentiation was well circumscribed smooth margined filling defect without definite mucosal destruction on surface. 5. Gastric varices showed multiple lobulated filling defected especially on gastric fundus that changed its size and shape by respiration and posture of patients. Same varices lesions on esophagus and history of liver disease were helpful for easier diagnosis. 6. Gastric bezoar showed well defined movable mass

  16. Benign gastric filling defect

    Energy Technology Data Exchange (ETDEWEB)

    Oh, K K; Lee, Y H; Cho, O K; Park, C Y [Yonsei University College of Medicine, Seoul (Korea, Republic of)

    1979-06-15

    The gastric lesion is a common source of complaints to Orientals, however, evaluation of gastric symptoms and laboratory examination offer little specific aid in the diagnosis of gastric diseases. Thus roentgenography of gastrointestinal tract is one of the most reliable method for detail diagnosis. On double contract study of stomach, gastric filling defect is mostly caused by malignant gastric cancer, however, other benign lesions can cause similar pictures which can be successfully treated by surgery. 66 cases of benign causes of gastric filling defect were analyzed at this point of view, which was verified pathologically by endoscope or surgery during recent 7 years in Yensei University College of Medicine, Severance Hospital. The characteristic radiological picture of each disease was discussed for precise radiologic diagnosis. 1. Of total 66 cases, there were 52 cases of benign gastric tumor 10 cases of gastric varices, 5 cases of gastric bezoar, 5 cases of corrosive gastritis, 3 cases of granulomatous disease and one case of gastric hematoma. 2. The most frequent causes of benign tumors were adenomatous polyp (35/42) and the next was leiomyoma (4/42). Others were one of case of carcinoid, neurofibroma and cyst. 3. Characteristic of benign adenomatous polyp were relatively small in size, smooth surface and were observed that large size, benign polyp was frequently type IV lesion with a stalk. 4. Submucosal tumors such as leiomyoma needed differential diagnosis with polypoid malignant cancer. However, the characteristic points of differentiation was well circumscribed smooth margined filling defect without definite mucosal destruction on surface. 5. Gastric varices showed multiple lobulated filling defected especially on gastric fundus that changed its size and shape by respiration and posture of patients. Same varices lesions on esophagus and history of liver disease were helpful for easier diagnosis. 6. Gastric bezoar showed well defined movable mass

  17. Surface defects and chiral algebras

    Energy Technology Data Exchange (ETDEWEB)

    Córdova, Clay [School of Natural Sciences, Institute for Advanced Study,1 Einstein Dr, Princeton, NJ 08540 (United States); Gaiotto, Davide [Perimeter Institute for Theoretical Physics,31 Caroline St N, Waterloo, ON N2L 2Y5 (Canada); Shao, Shu-Heng [School of Natural Sciences, Institute for Advanced Study,1 Einstein Dr, Princeton, NJ 08540 (United States)

    2017-05-26

    We investigate superconformal surface defects in four-dimensional N=2 superconformal theories. Each such defect gives rise to a module of the associated chiral algebra and the surface defect Schur index is the character of this module. Various natural chiral algebra operations such as Drinfeld-Sokolov reduction and spectral flow can be interpreted as constructions involving four-dimensional surface defects. We compute the index of these defects in the free hypermultiplet theory and Argyres-Douglas theories, using both infrared techniques involving BPS states, as well as renormalization group flows onto Higgs branches. In each case we find perfect agreement with the predicted characters.

  18. Point defects in nickel

    International Nuclear Information System (INIS)

    Peretto, P.

    1969-01-01

    The defects in electron irradiated nickel (20 deg. K) or neutron irradiated nickel (28 deg. K) are studied by simultaneous analysis using the magnetic after-effect, electron microscopy and electrical resistivity recovery. We use zone refined nickel (99.999 per cent) which, for some experiments, is alloyed with a small amount of iron (for example 0.1 per cent Fe). The temperature dependant electrical recovery may be divided in four stages. The sub-stages I B (31 deg. K), I C (42 deg. K), I D (from to 57 deg. K) and I E (62 deg. K) of stage I are due to the disappearance of single interstitials into vacancies. The interstitial defect has a split configuration with a migration energy of about 0.15 eV. In the close pair which disappears in stage I B the interstitial is found to be in a 3. neighbour position whilst in stage I D it is near the direction from the vacancy. In stage I E there is no longer any interaction between the interstitial and the vacancy. The stage II is due to more complicated interstitial defects: di-interstitials for stage II B (84 deg. K) and larger and larger interstitial loops for the following sub-stages. The loops may be seen by electron microscopy. Impurities can play the role of nucleation centers for the loops. Stages III A (370 deg. K) and III B (376 deg. K) are due to two types of di-vacancies. During stage IV (410 deg. K) the single vacancies migrate. Vacancy type loops and interstitial type loops grow concurrently and disappear at about 800 deg. K as observed by electron microscopy. (author) [fr

  19. Single ventricle cardiac defect

    International Nuclear Information System (INIS)

    Eren, B.; Turkmen, N.; Fedakar, R.; Cetin, V.

    2010-01-01

    Single ventricle heart is defined as a rare cardiac abnormality with a single ventricle chamber involving diverse functional and physiological defects. Our case is of a ten month-old baby boy who died shortly after admission to the hospital due to vomiting and diarrhoea. Autopsy findings revealed cyanosis of finger nails and ears. Internal examination revealed; large heart, weighing 60 grams, single ventricle, without a septum and upper membranous part. Single ventricle is a rare pathology, hence, this paper aims to discuss this case from a medico-legal point of view. (author)

  20. Defect detection using transient thermography

    International Nuclear Information System (INIS)

    Mohd Zaki Umar; Ibrahim Ahmad; Ab Razak Hamzah; Wan Saffiey Wan Abdullah

    2008-08-01

    An experimental research had been carried out to study the potential of transient thermography in detecting sub-surface defect of non-metal material. In this research, eight pieces of bakelite material were used as samples. Each samples had a sub-surface defect in the circular shape with different diameters and depths. Experiment was conducted using one-sided Pulsed Thermal technique. Heating of samples were done using 30 kWatt adjustable quartz lamp while infra red (IR) images of samples were recorded using THV 550 IR camera. These IR images were then analysed with ThermofitTMPro software to obtain the Maximum Absolute Differential Temperature Signal value, ΔΤ m ax and the time of its appearance, τ m ax (ΔΤ). Result showed that all defects were able to be detected even for the smallest and deepest defect (diameter = 5 mm and depth = 4 mm). However the highest value of Differential Temperature Signal (ΔΤ m ax), were obtained at defect with the largest diameter, 20 mm and at the shallowest depth, 1 mm. As a conclusion, the sensitivity of the pulsed thermography technique to detect sub-surface defects of bakelite material is proportionately related with the size of defect diameter if the defects are at the same depth. On the contrary, the sensitivity of the pulsed thermography technique inversely related with the depth of defect if the defects have similar diameter size. (Author)

  1. Ultrasonic defect characterization using parametric-manifold mapping

    Science.gov (United States)

    Velichko, A.; Bai, L.; Drinkwater, B. W.

    2017-06-01

    The aim of ultrasonic non-destructive evaluation includes the detection and characterization of defects, and an understanding of the nature of defects is essential for the assessment of structural integrity in safety critical systems. In general, the defect characterization challenge involves an estimation of defect parameters from measured data. In this paper, we explore the extent to which defects can be characterized by their ultrasonic scattering behaviour. Given a number of ultrasonic measurements, we show that characterization information can be extracted by projecting the measurement onto a parametric manifold in principal component space. We show that this manifold represents the entirety of the characterization information available from far-field harmonic ultrasound. We seek to understand the nature of this information and hence provide definitive statements on the defect characterization performance that is, in principle, extractable from typical measurement scenarios. In experiments, the characterization problem of surface-breaking cracks and the more general problem of elliptical voids are studied, and a good agreement is achieved between the actual parameter values and the characterization results. The nature of the parametric manifold enables us to explain and quantify why some defects are relatively easy to characterize, whereas others are inherently challenging.

  2. Production of freely-migrating defects during irradiation

    International Nuclear Information System (INIS)

    Rehn, L.E.; Okamoto, P.R.

    1986-09-01

    During irradiation at elevated temperatures, vacancy and interstitial defects that escape can produce several different types of microstructural changes. Hence the production rate of freely-migrating defects must be known as a function of irradiating particle species and energy before quantitative correlations can be made between microstructural changes. Our fundamental knowledge of freely-migrating defect production has increased substantially in recent years. Critical experimental findings that led to the improved understanding are reviewed in this paper. A strong similarity is found for the dependence of freely-migrating defect production on primary recoil energy as measured in a variety of metals and alloys by different authors. The efficiency for producing freely-migrating defects decreases much more strongly with increasing primary recoil energy than does the efficiency for creating stable defects at liquid helium temperatures. The stronger decrease can be understood in terms of additional intracascade recombination that results from the nonrandom distribution of defects existing in the primary damage state for high primary recoil energies. Although the existing data base is limited to fcc materials, the strong similarity in the reported investigations suggests that the same dependence of freely-migrating defect production on primary recoil energy may be characteristic of a wide variety of other alloy systems as well. 52 refs., 4 figs

  3. Study on surface defects in milling Inconel 718 super alloy

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Liu; Chengzu, Ren; Guofeng, Wang; Yinwei, Yang; Lu, Zhang [Tianjin University, Tianjin (China)

    2015-04-15

    Nickel-based alloys have been extensively used as critical components in aerospace industry, especially in the key section of aero engine. In general, these sections are manufactured by milling process because most of them have complex forms. However, surface defects appear frequently in milling due to periodic impact force, which leads to the deterioration of the fatigue life. We conducted milling experiments under different cutting conditions and found that four kinds of defects, i.e., tear, cavity, build up edge (BUE) and groove, commonly appear on the machined surface. Based on the observed results, the morphology and generation regime of these defects are analyzed and the carbide particle cracking is discussed to explain the appearance of the nickel alloy defects. To study the effect of the cutting parameters on the severity of these surface defects, two qualitative indicators, which are named as average number of the defects per field and average area ratio of the defects per field, are presented and the influence laws are summarized based on the results correspondingly. This study is helpful for understanding the generation mechanism of the surface defects during milling process of nickel based super alloy.

  4. Computer simulation of defect cluster

    Energy Technology Data Exchange (ETDEWEB)

    Kuramoto, Eiichi [Kyushu Univ., Kasuga, Fukuoka (Japan). Research Inst. for Applied Mechanics

    1996-04-01

    In order to elucidate individual element process of various defects and defect clusters of used materials under irradiation environments, interatomic potential with reliability was investigated. And for comparison with experimental results, it is often required to adopt the temperature effect and to investigate in details mechanism of one dimensional motion of micro conversion loop and so forth using the molecular dynamic (MD) method. Furthermore, temperature effect is also supposed for stable structure of defects and defect clusters, and many problems relating to alloy element are also remained. And, simulation on photon life at the defects and defect clusters thought to be important under comparison with equipment can also be supposed an improvement of effectiveness due to relation to theses products. In this paper, some topics in such flow was extracted to explain them. In particular, future important problems will be potential preparation of alloy, structure, dynamic behavior and limited temperature of intralattice atomic cluster. (G.K.)

  5. Topological defects in extended inflation

    International Nuclear Information System (INIS)

    Copeland, E.J.; Kolb, E.W.; Chicago Univ., IL; Liddle, A.R.

    1990-04-01

    We consider the production of topological defects, especially cosmic strings, in extended inflation models. In extended inflation, the Universe passes through a first-order phase transition via bubble percolation, which naturally allows defects to form at the end of inflation. The correlation length, which determines the number density of the defects, is related to the mean size of bubbles when they collide. This mechanism allows a natural combination of inflation and large-scale structure via cosmic strings. 18 refs

  6. Defects in new protective aprons

    International Nuclear Information System (INIS)

    Glaze, S.; LeBlanc, A.D.; Bushong, S.C.

    1984-01-01

    Upon careful examination, several defects have been detected in new protective aprons. The nature of the defects is identified and described. Although the occurrence of such defects has not exceeded 5%, they are significant enough to warrant return of the lead apron to the supplier. It is recommended that the integrity of all new protective aprons be verified upon receipt as well as at yearly intervals

  7. Topological defects in extended inflation

    International Nuclear Information System (INIS)

    Copeland, E.J.; Kolb, E.W.; Liddle, A.R.

    1990-01-01

    We consider the production of topological defects, especially cosmic strings, in extended-inflation models. In extended inflation, the Universe passes through a first-order phase transition via bubble percolation, which naturally allows defects to form at the end of inflation. The correlation length, which determines the number density of the defects, is related to the mean size of the bubbles when they collide. This mechanism allows a natural combination of inflation and large-scale structure via cosmic strings

  8. Metastable gravity on classical defects

    International Nuclear Information System (INIS)

    Ringeval, Christophe; Rombouts, Jan-Willem

    2005-01-01

    We discuss the realization of metastable gravity on classical defects in infinite-volume extra dimensions. In dilatonic Einstein gravity, it is found that the existence of metastable gravity on the defect core requires violation of the dominant energy condition for codimension N c =2 defects. This is illustrated with a detailed analysis of a six-dimensional hyperstring minimally coupled to dilaton gravity. We present the general conditions under which a codimension N c >2 defect admits metastable modes, and find that they differ from lower codimensional models in that, under certain conditions, they do not require violation of energy conditions to support quasilocalized gravity

  9. Defect Characterization of Pyroelectric Materials

    National Research Council Canada - National Science Library

    Keeble, David

    2002-01-01

    Two methods for identify point defects applicable to the study of technologically relevant pyroelectric oxide materials have been investigated, namely Positron Annihilation Lifetime Spectroscopy (PALS...

  10. Who named the quantum defect?

    International Nuclear Information System (INIS)

    Rau, A.R.P.; Inokuti, M.

    1997-01-01

    The notion of the quantum defect is important in atomic and molecular spectroscopy and also in unifying spectroscopy with collision theory. In the latter context, the quantum defect may be viewed as an ancestor of the phase shift. However, the origin of the term quantum defect does not seem to be explained in standard textbooks. It occurred in a 1921 paper by Schroedinger, preceding quantum mechanics, yet giving the correct meaning as an index of the short-range interactions with the core of an atom. The authors present the early history of the quantum-defect idea, and sketch its recent developments

  11. Fibrous metaphyseal defects

    International Nuclear Information System (INIS)

    Hajek, P.C.; Ritschi, P.; Kramer, J.; Imhof, H.; Karnel, F.

    1988-01-01

    Eighty-two patients (107 fibrous metaphyseal defects [FMDs]) were investigated with standard radiography and MR imaging (N = 15). Twenty-two of these were followed up sequentially up to 10 years (mean, 7.3 years). Histologic studies proved that FMDs originate at the site of insertion of a tendon in the perichondrium of the epiphyseal cartilage. After normal bone growth is regained, all FMDs were found to move diaphysically, following a straight line parallel to the long axis of the FMDs. This line pointed to the insertion of the tendon originally involved, a fact that was proved with MR imaging. Four characteristic stages were found to define a typical radiomorphologic course of an FMD

  12. Potential implications of the helical heart in congenital heart defects.

    Science.gov (United States)

    Corno, Antonio F; Kocica, Mladen J

    2007-01-01

    The anatomic and functional observations made by Francisco Torrent-Guasp, in particular his discovery of the helical ventricular myocardial band (HVMB), have challenged what has been taught to cardiologists and cardiac surgeons over centuries. A literature debate is ongoing, with interdependent articles and comments from supporters and critics. Adequate understanding of heart structure and function is obviously indispensable for the decision-making process in congenital heart defects. The HVMB described by Torrent-Guasp and the potential impact on the understanding and treatment of congenital heart defects has been analyzed in the following settings: embryology, ventriculo-arterial discordance (transposition of great arteries), Ebstein's anomaly, pulmonary valve regurgitation after repair of tetralogy of Fallot, Ross operation, and other congenital heart defects. The common structural spiral feature is only one of the elements responsible for the functional interaction of right and left ventricles, and understanding the form/function relationship in congenital heart defects is more difficult than for acquired heart disease because of the variety and complexity of congenital heart defects. Individuals involved in the care of patients with congenital heart defects have to be stimulated to consider further investigations and alternative surgical strategies.

  13. Mean Glenoid Defect Size and Location Associated With Anterior Shoulder Instability

    Science.gov (United States)

    Gottschalk, Lionel J.; Bois, Aaron J.; Shelby, Marcus A.; Miniaci, Anthony; Jones, Morgan H.

    2017-01-01

    Background: There is a strong correlation between glenoid defect size and recurrent anterior shoulder instability. A better understanding of glenoid defects could lead to improved treatments and outcomes. Purpose: To (1) determine the rate of reporting numeric measurements for glenoid defect size, (2) determine the consistency of glenoid defect size and location reported within the literature, (3) define the typical size and location of glenoid defects, and (4) determine whether a correlation exists between defect size and treatment outcome. Study Design: Systematic review; Level of evidence, 4. Methods: PubMed, Ovid, and Cochrane databases were searched for clinical studies measuring glenoid defect size or location. We excluded studies with defect size requirements or pathology other than anterior instability and studies that included patients with known prior surgery. Our search produced 83 studies; 38 studies provided numeric measurements for glenoid defect size and 2 for defect location. Results: From 1981 to 2000, a total of 5.6% (1 of 18) of the studies reported numeric measurements for glenoid defect size; from 2001 to 2014, the rate of reporting glenoid defects increased to 58.7% (37 of 63). Fourteen studies (n = 1363 shoulders) reported defect size ranges for percentage loss of glenoid width, and 9 studies (n = 570 shoulders) reported defect size ranges for percentage loss of glenoid surface area. According to 2 studies, the mean glenoid defect orientation was pointing toward the 3:01 and 3:20 positions on the glenoid clock face. Conclusion: Since 2001, the rate of reporting numeric measurements for glenoid defect size was only 58.7%. Among studies reporting the percentage loss of glenoid width, 23.6% of shoulders had a defect between 10% and 25%, and among studies reporting the percentage loss of glenoid surface area, 44.7% of shoulders had a defect between 5% and 20%. There is significant variability in the way glenoid bone loss is measured, calculated

  14. Blood flow patterns underlie developmental heart defects.

    Science.gov (United States)

    Midgett, Madeline; Thornburg, Kent; Rugonyi, Sandra

    2017-03-01

    Although cardiac malformations at birth are typically associated with genetic anomalies, blood flow dynamics also play a crucial role in heart formation. However, the relationship between blood flow patterns in the early embryo and later cardiovascular malformation has not been determined. We used the chicken embryo model to quantify the extent to which anomalous blood flow patterns predict cardiac defects that resemble those in humans and found that restricting either the inflow to the heart or the outflow led to reproducible abnormalities with a dose-response type relationship between blood flow stimuli and the expression of cardiac phenotypes. Constricting the outflow tract by 10-35% led predominantly to ventricular septal defects, whereas constricting by 35-60% most often led to double outlet right ventricle. Ligation of the vitelline vein caused mostly pharyngeal arch artery malformations. We show that both cardiac inflow reduction and graded outflow constriction strongly influence the development of specific and persistent abnormal cardiac structure and function. Moreover, the hemodynamic-associated cardiac defects recapitulate those caused by genetic disorders. Thus our data demonstrate the importance of investigating embryonic blood flow conditions to understand the root causes of congenital heart disease as a prerequisite to future prevention and treatment. NEW & NOTEWORTHY Congenital heart defects result from genetic anomalies, teratogen exposure, and altered blood flow during embryonic development. We show here a novel "dose-response" type relationship between the level of blood flow alteration and manifestation of specific cardiac phenotypes. We speculate that abnormal blood flow may frequently underlie congenital heart defects. Copyright © 2017 the American Physiological Society.

  15. Lumber defect detection by ultrasonics

    Science.gov (United States)

    K. A. McDonald

    1978-01-01

    Ultrasonics, the technology of high-frequency sound, has been developed as a viable means for locating most defects In lumber for use in digital form in decision-making computers. Ultrasonics has the potential for locating surface and internal defects in lumber of all species, green or dry, and rough sawn or surfaced.

  16. Neutron diffraction and lattice defects

    International Nuclear Information System (INIS)

    Hamaguchi, Yoshikazu

    1974-01-01

    Study on lattice defects by neutron diffraction technique is described. Wave length of neutron wave is longer than that of X-ray, and absorption cross-section is small. Number of defects observed by ESR is up to several defects, and the number studied with electron microscopes is more than 100. Information obtained by neutron diffraction concerns the number of defects between these two ranges. For practical analysis, several probable models are selected from the data of ESR or electron microscopes, and most probable one is determined by calculation. Then, defect concentration is obtained from scattering cross section. It is possible to measure elastic scattering exclusively by neutron diffraction. Minimum detectable concentration estimated is about 0.5% and 10 20 - 10 21 defects per unit volume. A chopper and a time of flight system are used as a measuring system. Cold neutrons are obtained from the neutron sources inserted into reactors. Examples of measurements by using similar equipments to PTNS-I system of Japan Atomic Energy Research Institute are presented. Interstitial concentration in the graphite irradiated by fast neutrons is shown. Defects in irradiated MgO were also investigated by measuring scattering cross section. Study of defects in Ge was made by measuring total cross section, and model analysis was performed in comparison with various models. (Kato, T.)

  17. Lectures on cosmic topological defects

    Energy Technology Data Exchange (ETDEWEB)

    Vachaspati, T [Department of Astronomy and Astrophysics, Colaba, Mumbai (India) and Physics Department, Case Western Reserve University, Cleveland (United States)

    2001-11-15

    These lectures review certain topological defects and aspects of their cosmology. Unconventional material includes brief descriptions of electroweak defects, the structure of domain walls in non-Abelian theories, and the spectrum of magnetic monopoles in SU(5) Grand Unified theory. (author)

  18. Toward Intelligent Software Defect Detection

    Science.gov (United States)

    Benson, Markland J.

    2011-01-01

    Source code level software defect detection has gone from state of the art to a software engineering best practice. Automated code analysis tools streamline many of the aspects of formal code inspections but have the drawback of being difficult to construct and either prone to false positives or severely limited in the set of defects that can be detected. Machine learning technology provides the promise of learning software defects by example, easing construction of detectors and broadening the range of defects that can be found. Pinpointing software defects with the same level of granularity as prominent source code analysis tools distinguishes this research from past efforts, which focused on analyzing software engineering metrics data with granularity limited to that of a particular function rather than a line of code.

  19. Holographic Chern-Simons defects

    International Nuclear Information System (INIS)

    Fujita, Mitsutoshi; Melby-Thompson, Charles M.; Meyer, René; Sugimoto, Shigeki

    2016-01-01

    We study SU(N) Yang-Mills-Chern-Simons theory in the presence of defects that shift the Chern-Simons level from a holographic point of view by embedding the system in string theory. The model is a D3-D7 system in Type IIB string theory, whose gravity dual is given by the AdS soliton background with probe D7 branes attaching to the AdS boundary along the defects. We holographically renormalize the free energy of the defect system with sources, from which we obtain the correlation functions for certain operators naturally associated to these defects. We find interesting phase transitions when the separation of the defects as well as the temperature are varied. We also discuss some implications for the Fractional Quantum Hall Effect and for 2-dimensional QCD.

  20. Defect forces, defect couples and path integrals in fracture mechanics

    International Nuclear Information System (INIS)

    Roche, R.L.

    1979-07-01

    In this work, it is shown that the path integrals can be introduced without any reference to the material behavior. The method is based on the definition in a continuous medium of a set of vectors and couples having the dimension of a force or a moment. More precisely, definitions are given of volume defect forces, surface defect forces, volume defect couples, and surface defect couples. This is done with the help of the stress working variation of a particule moving through the solid. The most important result is: the resultant of all the defect forces included in a volume V is the J integral on the surface surrounding V and the moment resultant is the L integral. So these integrals are defined without any assumption on the material constitutive equation. Another result is the material form of the virtual work principle - defect forces are acting like conventional forces in the conventional principles of virtual work. This lead to the introduction of the energy momentum tensor and of the associated couple stress. Application of this method is made to fracture mechanics in studying the defect forces distribution around a crack [fr

  1. Defect assessment benchmark studies

    International Nuclear Information System (INIS)

    Hooton, D.G.; Sharples, J.K.

    1995-01-01

    Assessments of the resistance to fast fracture of the beltline region of a PWR vessel subjected to a pressurized thermal shock (PTS) transient have been carried out using the procedures of French (RCC-M) and German (KTA) design codes, and comparisons made with results obtained using the R6 procedure as applied for Sizewell B. The example chosen for these comparisons is of a generic nature, and is taken as the PTS identified by the Hirsch addendum to the Second Marshall report (1987) as the most severe transient with regard to vessel integrity. All assessment methods show the beltline region of the vessel to be safe from the risk of fast fracture, but by varying factors of safety. These factors are discussed in terms of margins between limiting and reference defect sizes, fracture toughness and stress intensity factor, and material temperature and temperature at the onset of upper-shelf materials behaviour. Based on these studies, consideration is given to issues involved in the harmonization of those sections of the design codes which are concerned with methods for the demonstration of the avoidance of the risk of failure by fast fracture. (author)

  2. Large-Scale Molecular Simulations on the Mechanical Response and Failure Behavior of a defective Graphene: Cases of 5-8-5 Defects

    Science.gov (United States)

    Wang, Shuaiwei; Yang, Baocheng; Yuan, Jinyun; Si, Yubing; Chen, Houyang

    2015-10-01

    Understanding the effect of defects on mechanical responses and failure behaviors of a graphene membrane is important for its applications. As examples, in this paper, a family of graphene with various 5-8-5 defects are designed and their mechanical responses are investigated by employing molecular dynamics simulations. The dependence of fracture strength and strain as well as Young’s moduli on the nearest neighbor distance and defect types is examined. By introducing the 5-8-5 defects into graphene, the fracture strength and strain become smaller. However, the Young’s moduli of DL (Linear arrangement of repeat unit 5-8-5 defect along zigzag-direction of graphene), DS (a Slope angle between repeat unit 5-8-5 defect and zigzag direction of graphene) and DZ (Zigzag-like 5-8-5 defects) defects in the zigzag direction become larger than those in the pristine graphene in the same direction. A maximum increase of 11.8% of Young’s modulus is obtained. Furthermore, the brittle cracking mechanism is proposed for the graphene with 5-8-5 defects. The present work may provide insights in controlling the mechanical properties by preparing defects in the graphene, and give a full picture for the applications of graphene with defects in flexible electronics and nanodevices.

  3. Heat-Treatment of Defective UiO-66 from Modulated Synthesis: Adsorption and Stability Studies

    International Nuclear Information System (INIS)

    Jiao, Yang; Liu, Yang; Zhu, Guanghui; Hungerford, Julian T.; Bhattacharyya, Souryadeep

    2017-01-01

    Defect engineering in metal-organic frameworks (MOFs) is an emerging strategy that can be used to control physical or chemical characteristics of MOFs, including adsorption behavior and textural, mechanical, and conductive properties. Understanding the impact of defects on textural properties and chemical stability of MOFs is imperative to the development of MOFs with tunable defect sites. In this work, systematic adsorption measurements were performed with three adsorbate molecules (SO 2 , benzene, and cyclohexane) to investigate changes in the pore size of defective UiO-66. Compared to the parent UiO-66, the defective UiO-66 shows significant changes in adsorption capacities among the selected adsorbate molecules, demonstrating that pore size is significantly enlarged by the missing cluster defects. BET surface area analysis and DFT calculations were also performed to interrogate the chemical stability of the defective MOFs after exposure to water and acidic environments. This work shows that pore size can be tuned as a function of defect concentration. Further, it is shown that the structural incorporation of trifluoroacetate groups in defective UiO-66 leads to an increase in average pore size without sacrificing chemical stability toward water and acidic species. The results of this work advance the understanding of textural properties and chemical stability of defect-engineered MOFs and also suggest a preparation method for synthesizing defective but stable MOFs.

  4. Serine biosynthesis and transport defects.

    Science.gov (United States)

    El-Hattab, Ayman W

    2016-07-01

    l-serine is a non-essential amino acid that is biosynthesized via the enzymes phosphoglycerate dehydrogenase (PGDH), phosphoserine aminotransferase (PSAT), and phosphoserine phosphatase (PSP). Besides its role in protein synthesis, l-serine is a potent neurotrophic factor and a precursor of a number of essential compounds including phosphatidylserine, sphingomyelin, glycine, and d-serine. Serine biosynthesis defects result from impairments of PGDH, PSAT, or PSP leading to systemic serine deficiency. Serine biosynthesis defects present in a broad phenotypic spectrum that includes, at the severe end, Neu-Laxova syndrome, a lethal multiple congenital anomaly disease, intermediately, infantile serine biosynthesis defects with severe neurological manifestations and growth deficiency, and at the mild end, the childhood disease with intellectual disability. A serine transport defect resulting from deficiency of the ASCT1, the main transporter for serine in the central nervous system, has been recently described in children with neurological manifestations that overlap with those observed in serine biosynthesis defects. l-serine therapy may be beneficial in preventing or ameliorating symptoms in serine biosynthesis and transport defects, if started before neurological damage occurs. Herein, we review serine metabolism and transport, the clinical, biochemical, and molecular aspects of serine biosynthesis and transport defects, the mechanisms of these diseases, and the potential role of serine therapy. Copyright © 2016 Elsevier Inc. All rights reserved.

  5. Atomic defects and diffusion in metals

    International Nuclear Information System (INIS)

    Siegel, R.W.

    1981-11-01

    The tracer self-diffusion data for fcc and refractory bcc metals are briefly reviewed with respect to (i) the available monovacancy formation and migration properties and (ii) the high-temperature diffusion enhancement above that expected for mass transport via atomic exchange with monovacancies. While the atomic-defect mechanism for low-temperature self-diffusion can be reliably attributed to monovacancies, the mechanisms responsible for high-temperature mass transport are not so easily defined at this time; both divacancies and interstitials must be seriously considered. Possibilities for improving our understanding in this area are discussed. 68 references, 7 figures

  6. Freely-migrating defects: Their production and interaction with cascade remnants

    International Nuclear Information System (INIS)

    Rehn, L.E.; Wiedersich, H.

    1991-05-01

    Many microstructural changes that occur during irradiation are driven primarily by freely-migrating defects, i.e. those defects which escape from nascent cascades to migrate over distances that are large relative to typical cascade dimensions. Several measurements during irradiation at elevated temperatures have shown that the survival rate of freely-migrating defects decreases much more strongly with increasing primary recoil energy than does the survival rate for defects generated at liquid helium temperatures. For typical fission or fusion recoil spectra, and for heavy-ion bombardment, the fraction of defects that migrate long-distances is apparently only ∼1% of the calculated dpa. This small surviving fraction of freely-migrating defects results at least partially from additional intracascade recombination at elevated temperatures. However, cascade remnants, e.g., vacancy and interstitial clusters, also contribute by enhancing intercascade defect annihilation. A recently developed rate-theory approach is used to discuss the relative importance of intra- and intercascade recombination to the survival rate of freely-migrating defects. Within the validity of certain simplifying assumptions, the additional sink density provided by defect clusters produced directly within individual cascades can explain the difference between a defect survival rate of about 30% for low dose, low temperature irradiations with heavy ions, and a survival rate of only ∼1% for freely-migrating defects at elevated temperatures. The status of our current understanding of freely-migrating defects, including remaining unanswered questions, is also discussed. 33 refs., 5 figs

  7. Defect detection based on extreme edge of defective region histogram

    Directory of Open Access Journals (Sweden)

    Zouhir Wakaf

    2018-01-01

    Full Text Available Automatic thresholding has been used by many applications in image processing and pattern recognition systems. Specific attention was given during inspection for quality control purposes in various industries like steel processing and textile manufacturing. Automatic thresholding problem has been addressed well by the commonly used Otsu method, which provides suitable results for thresholding images based on a histogram of bimodal distribution. However, the Otsu method fails when the histogram is unimodal or close to unimodal. Defects have different shapes and sizes, ranging from very small to large. The gray-level distributions of the image histogram can vary between unimodal and multimodal. Furthermore, Otsu-revised methods, like the valley-emphasis method and the background histogram mode extents, which overcome the drawbacks of the Otsu method, require preprocessing steps and fail to use the general threshold for multimodal defects. This study proposes a new automatic thresholding algorithm based on the acquisition of the defective region histogram and the selection of its extreme edge as the threshold value to segment all defective objects in the foreground from the image background. To evaluate the proposed defect-detection method, common standard images for experimentation were used. Experimental results of the proposed method show that the proposed method outperforms the current methods in terms of defect detection.

  8. Implications of permeation through intrinsic defects in graphene on the design of defect-tolerant membranes for gas separation.

    Science.gov (United States)

    Boutilier, Michael S H; Sun, Chengzhen; O'Hern, Sean C; Au, Harold; Hadjiconstantinou, Nicolas G; Karnik, Rohit

    2014-01-28

    Gas transport through intrinsic defects and tears is a critical yet poorly understood phenomenon in graphene membranes for gas separation. We report that independent stacking of graphene layers on a porous support exponentially decreases flow through defects. On the basis of experimental results, we develop a gas transport model that elucidates the separate contributions of tears and intrinsic defects on gas leakage through these membranes. The model shows that the pore size of the porous support and its permeance critically affect the separation behavior, and reveals the parameter space where gas separation can be achieved regardless of the presence of nonselective defects, even for single-layer membranes. The results provide a framework for understanding gas transport in graphene membranes and guide the design of practical, selectively permeable graphene membranes for gas separation.

  9. Competition between microstructure and defect in multiaxial high cycle fatigue

    Directory of Open Access Journals (Sweden)

    F. Morel

    2015-07-01

    Full Text Available This study aims at providing a better understanding of the effects of both microstructure and defect on the high cycle fatigue behavior of metallic alloys using finite element simulations of polycrystalline aggregates. It is well known that the microstructure strongly affects the average fatigue strength and when the cyclic stress level is close to the fatigue limit, it is often seen as the main source of the huge scatter generally observed in this fatigue regime. The presence of geometrical defects in a material can also strongly alter the fatigue behavior. Nonetheless, when the defect size is small enough, i.e. under a critical value, the fatigue strength is no more affected by the defect. The so-called Kitagawa effect can be interpreted as a competition between the crack initiation mechanisms governed either by the microstructure or by the defect. Surprisingly, only few studies have been done to date to explain the Kitagawa effect from the point of view of this competition, even though this effect has been extensively investigated in the literature. The primary focus of this paper is hence on the use of both FE simulations and explicit descriptions of the microstructure to get insight into how the competition between defect and microstructure operates in HCF. In order to account for the variability of the microstructure in the predictions of the macroscopic fatigue limits, several configurations of crystalline orientations, crystal aggregates and defects are studied. The results of each individual FE simulation are used to assess the response at the macroscopic scale thanks to a probabilistic fatigue criterion proposed by the authors in previous works. The ability of this criterion to predict the influence of defects on the average and the scatter of macroscopic fatigue limits is evaluated. In this paper, particular emphasis is also placed on the effect of different loading modes (pure tension, pure torsion and combined tension and torsion on

  10. Low-defect reflective mask blanks for extreme ultraviolet lithography

    International Nuclear Information System (INIS)

    Burkhart, S C; Cerjarn, C; Kearney, P; Mirkarimi, P; Ray-Chaudhuri, A; Walton, C.

    1999-01-01

    Extreme Ultraviolet Lithgraphy (EUVL) is an emerging technology for fabrication of sub-100 nm feature sizes on silicon, following the SIA road map well into the 21st century. The specific EUVL system described is a scanned, projection lithography system with a 4:1 reduction, using a laser plasma EUV source. The mask and all of the system optics are reflective, multilayer mirrors which function in the extreme ultraviolet at 13.4 nm wavelength. Since the masks are imaged to the wafer exposure plane, mask defects greater than 80% of the exposure plane CD (for 4:1 reduction) will in many cases render the mask useless, whereas intervening optics can have defects which are not a printing problem. For the 100 nm node, we must reduce defects to less than 0.01/cm ampersand sup2; at sign 80nm or larger to obtain acceptable mask production yields. We have succeeded in reducing the defects to less than 0.1/cm ampersand sup2; for defects larger than 130 nm detected by visible light inspection tools, however our program goal is to achieve 0.01/cm ampersand sup2; in the near future. More importantly though, we plan to have a detailed understanding of defect origination and the effect on multilayer growth in order to mitigate defects below the 10 -2 /cm ampersand sup2; level on the next generation of mask blank deposition systems. In this paper we will discuss issues and results from the ion-beam multilayer deposition tool, details of the defect detection and characterization facility, and progress on defect printability modeling

  11. Immersion lithography defectivity analysis at DUV inspection wavelength

    Science.gov (United States)

    Golan, E.; Meshulach, D.; Raccah, N.; Yeo, J. Ho.; Dassa, O.; Brandl, S.; Schwarz, C.; Pierson, B.; Montgomery, W.

    2007-03-01

    Significant effort has been directed in recent years towards the realization of immersion lithography at 193nm wavelength. Immersion lithography is likely a key enabling technology for the production of critical layers for 45nm and 32nm design rule (DR) devices. In spite of the significant progress in immersion lithography technology, there remain several key technology issues, with a critical issue of immersion lithography process induced defects. The benefits of the optical resolution and depth of focus, made possible by immersion lithography, are well understood. Yet, these benefits cannot come at the expense of increased defect counts and decreased production yield. Understanding the impact of the immersion lithography process parameters on wafer defects formation and defect counts, together with the ability to monitor, control and minimize the defect counts down to acceptable levels is imperative for successful introduction of immersion lithography for production of advanced DR's. In this report, we present experimental results of immersion lithography defectivity analysis focused on topcoat layer thickness parameters and resist bake temperatures. Wafers were exposed on the 1150i-α-immersion scanner and 1200B Scanner (ASML), defect inspection was performed using a DUV inspection tool (UVision TM, Applied Materials). Higher sensitivity was demonstrated at DUV through detection of small defects not detected at the visible wavelength, indicating on the potential high sensitivity benefits of DUV inspection for this layer. The analysis indicates that certain types of defects are associated with different immersion process parameters. This type of analysis at DUV wavelengths would enable the optimization of immersion lithography processes, thus enabling the qualification of immersion processes for volume production.

  12. Defects of the Glycinergic Synapse in Zebrafish

    Science.gov (United States)

    Ogino, Kazutoyo; Hirata, Hiromi

    2016-01-01

    Glycine mediates fast inhibitory synaptic transmission. Physiological importance of the glycinergic synapse is well established in the brainstem and the spinal cord. In humans, the loss of glycinergic function in the spinal cord and brainstem leads to hyperekplexia, which is characterized by an excess startle reflex to sudden acoustic or tactile stimulation. In addition, glycinergic synapses in this region are also involved in the regulation of respiration and locomotion, and in the nociceptive processing. The importance of the glycinergic synapse is conserved across vertebrate species. A teleost fish, the zebrafish, offers several advantages as a vertebrate model for research of glycinergic synapse. Mutagenesis screens in zebrafish have isolated two motor defective mutants that have pathogenic mutations in glycinergic synaptic transmission: bandoneon (beo) and shocked (sho). Beo mutants have a loss-of-function mutation of glycine receptor (GlyR) β-subunit b, alternatively, sho mutant is a glycinergic transporter 1 (GlyT1) defective mutant. These mutants are useful animal models for understanding of glycinergic synaptic transmission and for identification of novel therapeutic agents for human diseases arising from defect in glycinergic transmission, such as hyperekplexia or glycine encephalopathy. Recent advances in techniques for genome editing and for imaging and manipulating of a molecule or a physiological process make zebrafish more attractive model. In this review, we describe the glycinergic defective zebrafish mutants and the technical advances in both forward and reverse genetic approaches as well as in vivo visualization and manipulation approaches for the study of the glycinergic synapse in zebrafish. PMID:27445686

  13. Facts about Congenital Heart Defects

    Science.gov (United States)

    ... types of CHDs. The types marked with a star (*) are considered critical CHDs. Atrial Septal Defect Atrioventricular ... for Disease Control and Prevention Email Recommend Tweet YouTube Instagram Listen Watch RSS ABOUT About CDC Jobs ...

  14. Birth Defects Data and Statistics

    Science.gov (United States)

    ... Submit" /> Information For… Media Policy Makers Data & Statistics Recommend on Facebook Tweet Share Compartir On This ... and critical. Read below for the latest national statistics on the occurrence of birth defects in the ...

  15. Defects in semiconductors

    International Nuclear Information System (INIS)

    Tilly, L.

    1993-04-01

    In this thesis, experimental results of the transition metals Ti, V, Nb, Mo, and W as impurity centres in silicon are presented. Transition metal doping was accomplished by ion implantation. Emphasis is put on energy level position, electrical and optical properties of the encountered defect levels. Junction space charge methods (JSCM) such as DLTS, photocapacitance and photocurrent techniques are employed. Three energy levels are found for the 3d-transition metals Ti(E c -0.06eV, E c -0.30eV, E v +0.26) and V(E c -0.21eV, E c -0,48e, E v +0.36eV), and for the 4d-element Nb(E c -0.29eV, E c -0.58eV, E v +0.163eV) in Silicon, whereas only one transition metal induced level is found for Mo(E v +0.30eV) and W(E v +0.38eV) respectively. Electrical and optical characteristics of Si 1-x Ge x ,0.7 7 cm -2 . The solvent Bi, used in the LPE-process, is found to be the dominant impurity element. Furthermore, liquid phase epitaxy of high purity In 0.53 Ga 0.57 As on InP, together with the properties of the Cu-induced acceptor in this material are examined. Free electron concentrations of n=5x10 14 cm -3 and electron Hall-mobilities of μ 77K = 44000 cm 2 /Vs are achieved. The energy level position of the Cu-acceptor is found to be E v +0.025eV. Photoluminescence and Hall-effect measurements, together with JSCM are the main characterization methods used. The band linups of In 0.53 Ga 0.47 As with GaAs and with InP are determined according to the Cu-acceptor energy level position in these materials. Additionally, the hydrostatic pressure dependence of the Cu-acceptor energy level position in In 0.53 Ga 0.47 As is examined. (103 refs.)

  16. Radial collapse and physical mechanism of carbon nanotube with divacancy and 5-8-5 defects

    International Nuclear Information System (INIS)

    Zhang Ya-Ping; Ling Cui-Cui; Li Gui-Xia; Zhu Hai-Feng; Zhang Meng-Yu

    2015-01-01

    By employing molecular mechanics and molecular dynamics simulations, we investigate the radial collapses and elasticities of different chiral single-walled carbon nanotubes (SWCNTs) with divacancy, and 5-8-5 defects. It is found that divacancy and 5-8-5 defect can reduce the collapse pressure (P c ) of SWCNT (10, 10) while 5-8-5 defect can greatly increase P c of SWCNT (17, 0). For example, 5-8-5 defect can make P c of SWCNT (17, 0) increase by 500%. A model is established to understand the effects of chirality, divacancy, and 5-8-5 defect on radial collapse of SWCNTs. The results are particularly of value for understanding the mechanical behavior of SWCNT with divacancy, and the 5-8-5 defect that may be considered as a filler of high loading composites. (paper)

  17. Understanding Alzheimer's

    Science.gov (United States)

    ... Navigation Bar Home Current Issue Past Issues Understanding Alzheimer's Past Issues / Fall 2007 Table of Contents For ... and brain scans. No treatment so far stops Alzheimer's. However, for some in the disease's early and ...

  18. Topological defects from the multiverse

    Science.gov (United States)

    Zhang, Jun; Blanco-Pillado, Jose J.; Garriga, Jaume; Vilenkin, Alexander

    2015-05-01

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  19. Topological defects from the multiverse

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jun [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States); Blanco-Pillado, Jose J. [Department of Theoretical Physics, University of the Basque Country UPV/EHU, 48080 Bilbao (Spain); IKERBASQUE, Basque Foundation for Science, 48013, Bilbao (Spain); Garriga, Jaume [Departament de Fisica Fonamental i Institut de Ciencies del Cosmos, Universitat de Barcelona, Marti i Franques, 1, 08028, Barcelona (Spain); Vilenkin, Alexander [Institute of Cosmology, Department of Physics and Astronomy, Tufts University, Medford, MA 02155 (United States)

    2015-05-28

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble.

  20. Topological defects from the multiverse

    International Nuclear Information System (INIS)

    Zhang, Jun; Vilenkin, Alexander; Blanco-Pillado, Jose J.; Garriga, Jaume

    2015-01-01

    Many theories of the early universe predict the existence of a multiverse where bubbles continuously nucleate giving rise to observers in their interior. In this paper, we point out that topological defects of several dimensionalities will also be produced in de Sitter like regions of the multiverse. In particular, defects could be spontaneously nucleated in our parent vacuum. We study the evolution of these defects as they collide with and propagate inside of our bubble. We estimate the present distribution of defects in the observable part of the universe. The expected number of such nearby defects turns out to be quite small, even for the highest nucleation rate. We also study collisions of strings and domain walls with our bubble in our past light cone. We obtain simulated full-sky maps of the loci of such collisions, and find their angular size distribution. Similarly to what happens in the case of bubble collisions, the prospect of detecting any collisions of our bubble with ambient defects is greatly enhanced in the case where the cosmological constant of our parent vacuum is much higher than the vacuum energy density during inflation in our bubble

  1. Electrical fingerprint of pipeline defects

    International Nuclear Information System (INIS)

    Mica, Isabella; Polignano, Maria Luisa; Marco, Cinzia De

    2004-01-01

    Pipeline defects are dislocations that connect the source region of the transistor with the drain region. They were widely reported to occur in CMOS, BiCMOS devices and recently in SOI technologies. They can reduce device yield either by affecting the devices functionality or by increasing the current consumption under stand-by conditions. In this work the electrical fingerprint of these dislocations is studied, its purpose is to enable us to identify these defects as the ones responsible for device failure. It is shown that the pipeline defects are responsible for a leakage current from source to drain in the transistors. This leakage has a resistive characteristic and it is lightly modulated by the body bias. It is not sensitive to temperature; vice versa the off-current of a good transistor exhibits the well-known exponential dependence on 1/T. The emission spectrum of these defects was studied and compared with the spectrum of a good transistor. The paper aims to show that the spectrum of a defective transistor is quite peculiar; it shows well defined peaks, whereas the spectrum of a good transistor under saturation conditions is characterized by a broad spectral light emission distribution. Finally the deep-level transient spectroscopy (DLTS) is tried on defective diodes

  2. Influence of growth temperature on bulk and surface defects in hybrid lead halide perovskite films

    Science.gov (United States)

    Peng, Weina; Anand, Benoy; Liu, Lihong; Sampat, Siddharth; Bearden, Brandon E.; Malko, Anton V.; Chabal, Yves J.

    2016-01-01

    The rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state density of samples prepared at 150 °C (~1017 cm-3) increases by 5 fold at 175 °C even though the average grains size increases slightly, ruling out grain boundary defects as the main mechanism for the observed differences in PL properties upon annealing. Upon surface passivation using water molecules, the PL intensity and lifetime of samples prepared at 200 °C are only partially improved, remaining significantly lower than those prepared at 150 °C. Thus, the present study indicates that the majority of these defect states observed at elevated growth temperatures originates from bulk defects and underscores the importance to control the formation of bulk defects together with grain boundary and surface defects to further improve the optoelectronic properties of perovskites.The rapid development of perovskite solar cells has focused its attention on defects in perovskites, which are gradually realized to strongly control the device performance. A fundamental understanding is therefore needed for further improvement in this field. Recent efforts have mainly focused on minimizing the surface defects and grain boundaries in thin films. Using time-resolved photoluminescence spectroscopy, we show that bulk defects in perovskite samples prepared using vapor assisted solution process (VASP) play a key role in addition to surface and grain boundary defects. The defect state

  3. Toward a comprehensive theory of radiation-induced swelling and creep - the point defect concentrations

    International Nuclear Information System (INIS)

    Mansur, L.K.; Yoo, M.H.

    1979-01-01

    The theory of void swelling and irradiation creep is now fairly comprehensive. A unifying concept on which most of this understanding rests is that of the rate theory point defect concentrations. Several basic aspects of this unifying conept are reviewed. These relate to local fluctuations in point defect concentrations produced by cascades, the effects of thermal and radiation-produced divacancies, and the effects of point defect trapping

  4. Absorption and atom mobility in electric field: point defect role in glasses

    International Nuclear Information System (INIS)

    Serruys, Y.; Vigouroux, J.P.

    1986-10-01

    During the surface analysis of dielectric materials, the impinging ionising particles induce point defects localised in the band gap and build an electrical charge. The electric field created by the charged defects modifies the physico-chemical properties of surface and bulk. We show that the fundamental study of defects allows a better understanding of technological phenomena such as dielectric breakdown, fracture and diffusion [fr

  5. Embodied Understanding

    Directory of Open Access Journals (Sweden)

    Mark Leonard Johnson

    2015-06-01

    Full Text Available Western culture has inherited a view of understanding as an intellectual cognitive operation of grasping of concepts and their relations. However, cognitive science research has shown that this received intellectualist conception is substantially out of touch with how humans actually make and experience meaning. The view emerging from the mind sciences recognizes that understanding is profoundly embodied, insofar as our conceptualization and reasoning recruit sensory, motor, and affective patterns and processes to structure our understanding of, and engagement with, our world. A psychologically realistic account of understanding must begin with the patterns of ongoing interaction between an organism and its physical and cultural environments and must include both our emotional responses to changes in our body and environment, and also the actions by which we continuously transform our experience. Consequently, embodied understanding is not merely a conceptual/propositional activity of thought, but rather constitutes our most basic way of being in, and engaging with, our surroundings in a deep visceral manner.

  6. Understanding Maple

    CERN Document Server

    Thompson, Ian

    2016-01-01

    Maple is a powerful symbolic computation system that is widely used in universities around the world. This short introduction gives readers an insight into the rules that control how the system works, and how to understand, fix, and avoid common problems. Topics covered include algebra, calculus, linear algebra, graphics, programming, and procedures. Each chapter contains numerous illustrative examples, using mathematics that does not extend beyond first-year undergraduate material. Maple worksheets containing these examples are available for download from the author's personal website. The book is suitable for new users, but where advanced topics are central to understanding Maple they are tackled head-on. Many concepts which are absent from introductory books and manuals are described in detail. With this book, students, teachers and researchers will gain a solid understanding of Maple and how to use it to solve complex mathematical problems in a simple and efficient way.

  7. Defect reduction of patterned media templates and disks

    Science.gov (United States)

    Luo, Kang; Ha, Steven; Fretwell, John; Ramos, Rick; Ye, Zhengmao; Schmid, Gerard; LaBrake, Dwayne; Resnick, Douglas J.; Sreenivasan, S. V.

    2010-05-01

    Imprint lithography has been shown to be an effective technique for the replication of nano-scale features. Acceptance of imprint lithography for manufacturing will require a demonstration of defect levels commensurate with cost-effective device production. This work summarizes the results of defect inspections of hard disks patterned using Jet and Flash Imprint Lithography (J-FILTM). Inspections were performed with optical based automated inspection tools. For the hard drive market, it is important to understand the defectivity of both the template and the imprinted disk. This work presents a methodology for automated pattern inspection and defect classification for imprint-patterned media. Candela CS20 and 6120 tools from KLA-Tencor map the optical properties of the disk surface, producing highresolution grayscale images of surface reflectivity and scattered light. Defects that have been identified in this manner are further characterized according to the morphology. The imprint process was tested after optimizing both the disk cleaning and adhesion layers processes that precede imprinting. An extended imprint run was performed and both the defect types and trends are reported.

  8. Understanding physics

    CERN Document Server

    Mansfield, Michael

    2011-01-01

    Understanding Physics - Second edition is a comprehensive, yet compact, introductory physics textbook aimed at physics undergraduates and also at engineers and other scientists taking a general physics course. Written with today's students in mind, this text covers the core material required by an introductory course in a clear and refreshing way. A second colour is used throughout to enhance learning and understanding. Each topic is introduced from first principles so that the text is suitable for students without a prior background in physics. At the same time the book is designed to enable

  9. Understanding Federalism.

    Science.gov (United States)

    Hickok, Eugene W., Jr.

    1990-01-01

    Urges returning to the original federalist debates to understand contemporary federalism. Reviews "The Federalist Papers," how federalism has evolved, and the centralization of the national government through acts of Congress and Supreme Court decisions. Recommends teaching about federalism as part of teaching about U.S. government…

  10. Understanding Energy

    Science.gov (United States)

    Menon, Deepika; Shelby, Blake; Mattingly, Christine

    2016-01-01

    "Energy" is a term often used in everyday language. Even young children associate energy with the food they eat, feeling tired after playing soccer, or when asked to turn the lights off to save light energy. However, they may not have the scientific conceptual understanding of energy at this age. Teaching energy and matter could be…

  11. Determination of defect content and defect profile in semiconductor heterostructures

    International Nuclear Information System (INIS)

    Zubiaga, A; Garcia, J A; Plazaola, F; Zuniga-Perez, J; Munoz-Sanjose, V

    2011-01-01

    In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

  12. Determination of defect content and defect profile in semiconductor heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Zubiaga, A [Laboratory of Physics, HUT, PO Box 1100, 02015 TKK, Espoo (Finland); Garcia, J A; Plazaola, F [Zientzia eta Teknologia Fakultatea, Euskal Herriko Unbertsitatea, P. K. 644, 48080, Bilbao (Spain); Zuniga-Perez, J; Munoz-Sanjose, V, E-mail: fernando.plazaola@ehu.es [Universitat de Valencia, Departamento de Fisica Aplicada i Electromagnetisme, Dr. Moliner 50, 46100 Burjassot, Valencia (Spain)

    2011-01-10

    In this article we present an overview of the technique to obtain the defects depth profile and width of a deposited layer and multilayer based on positron annihilation spectroscopy. In particular we apply the method to ZnO and ZnO/ZnCdO layers deposited on sapphire substrates. After introducing some terminology we first calculate the trend that the W/S parameters of the Doppler broadening measurements must follow, both in a qualitative and quantitative way. From this point we extend the results to calculate the width and defect profiles in deposited layer samples.

  13. Defects in conformal field theory

    International Nuclear Information System (INIS)

    Billò, Marco; Gonçalves, Vasco; Lauria, Edoardo; Meineri, Marco

    2016-01-01

    We discuss consequences of the breaking of conformal symmetry by a flat or spherical extended operator. We adapt the embedding formalism to the study of correlation functions of symmetric traceless tensors in the presence of the defect. Two-point functions of a bulk and a defect primary are fixed by conformal invariance up to a set of OPE coefficients, and we identify the allowed tensor structures. A correlator of two bulk primaries depends on two cross-ratios, and we study its conformal block decomposition in the case of external scalars. The Casimir equation in the defect channel reduces to a hypergeometric equation, while the bulk channel blocks are recursively determined in the light-cone limit. In the special case of a defect of codimension two, we map the Casimir equation in the bulk channel to the one of a four-point function without defect. Finally, we analyze the contact terms of the stress-tensor with the extended operator, and we deduce constraints on the CFT data. In two dimensions, we relate the displacement operator, which appears among the contact terms, to the reflection coefficient of a conformal interface, and we find unitarity bounds for the latter.

  14. Defects in conformal field theory

    Energy Technology Data Exchange (ETDEWEB)

    Billò, Marco [Dipartimento di Fisica, Università di Torino, and Istituto Nazionale di Fisica Nucleare - sezione di Torino,Via P. Giuria 1 I-10125 Torino (Italy); Gonçalves, Vasco [Centro de Física do Porto,Departamento de Física e Astronomia Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto (Portugal); ICTP South American Institute for Fundamental Research Instituto de Física Teórica,UNESP - University Estadual Paulista,Rua Dr. Bento T. Ferraz 271, 01140-070, São Paulo, SP (Brazil); Lauria, Edoardo [Institute for Theoretical Physics, KU Leuven, Celestijnenlaan 200D, B-3001 Leuven (Belgium); Meineri, Marco [Perimeter Institute for Theoretical Physics,Waterloo, Ontario, N2L 2Y5 (Canada); Scuola Normale Superiore, and Istituto Nazionale di Fisica Nucleare - sezione di Pisa,Piazza dei Cavalieri 7 I-56126 Pisa (Italy)

    2016-04-15

    We discuss consequences of the breaking of conformal symmetry by a flat or spherical extended operator. We adapt the embedding formalism to the study of correlation functions of symmetric traceless tensors in the presence of the defect. Two-point functions of a bulk and a defect primary are fixed by conformal invariance up to a set of OPE coefficients, and we identify the allowed tensor structures. A correlator of two bulk primaries depends on two cross-ratios, and we study its conformal block decomposition in the case of external scalars. The Casimir equation in the defect channel reduces to a hypergeometric equation, while the bulk channel blocks are recursively determined in the light-cone limit. In the special case of a defect of codimension two, we map the Casimir equation in the bulk channel to the one of a four-point function without defect. Finally, we analyze the contact terms of the stress-tensor with the extended operator, and we deduce constraints on the CFT data. In two dimensions, we relate the displacement operator, which appears among the contact terms, to the reflection coefficient of a conformal interface, and we find unitarity bounds for the latter.

  15. Detection of paint polishing defects

    Science.gov (United States)

    Rebeggiani, S.; Wagner, M.; Mazal, J.; Rosén, B.-G.; Dahlén, M.

    2018-06-01

    Surface finish plays a major role on perceived product quality, and is the first thing a potential buyer sees. Today end-of-line repairs of the body of cars and trucks are inevitably to secure required surface quality. Defects that occur in the paint shop, like dust particles, are eliminated by manual sanding/polishing which lead to other types of defects when the last polishing step is not performed correctly or not fully completed. One of those defects is known as ‘polishing roses’ or holograms, which are incredibly hard to detect in artificial light but are clearly visible in sunlight. This paper will present the first tests with a measurement set-up newly developed to measure and analyse polishing roses. The results showed good correlations to human visual evaluations where repaired panels were estimated based on the defects’ intensity, severity and viewing angle.

  16. Theory of Defects in Semiconductors

    CERN Document Server

    Drabold, David A

    2007-01-01

    Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.

  17. Defect CFTs and holographic multiverse

    Energy Technology Data Exchange (ETDEWEB)

    Fiol, Bartomeu, E-mail: bfiol@ub.edu [Departament de Física Fonamental i Institut de Ciències del Cosmos, Universitat de Barcelona, Martí i Franquès 1, 08193 Barcelona (Spain)

    2010-07-01

    We investigate some aspects of a recent proposal for a holographic description of the multiverse. Specifically, we focus on the implications on the suggested duality of the fluctuations of a bubble separating two universes with different cosmological constants. We do so by considering a similar problem in a 2+1 CFT with a codimension one defect, obtained by an M5-brane probe embedding in AdS{sub 4} × S{sup 7}, and studying its spectrum of fluctuations. Our results suggest that the kind of behavior required by the spectrum of bubble fluctuations is not likely to take place in defect CFTs with an AdS dual, although it might be possible if the defect supports a non-unitary theory.

  18. Defect CFTs and holographic multiverse

    International Nuclear Information System (INIS)

    Fiol, Bartomeu

    2010-01-01

    We investigate some aspects of a recent proposal for a holographic description of the multiverse. Specifically, we focus on the implications on the suggested duality of the fluctuations of a bubble separating two universes with different cosmological constants. We do so by considering a similar problem in a 2+1 CFT with a codimension one defect, obtained by an M5-brane probe embedding in AdS 4 × S 7 , and studying its spectrum of fluctuations. Our results suggest that the kind of behavior required by the spectrum of bubble fluctuations is not likely to take place in defect CFTs with an AdS dual, although it might be possible if the defect supports a non-unitary theory

  19. Understanding Translation

    DEFF Research Database (Denmark)

    Schjoldager, Anne Gram; Gottlieb, Henrik; Klitgård, Ida

    Understanding Translation is designed as a textbook for courses on the theory and practice of translation in general and of particular types of translation - such as interpreting, screen translation and literary translation. The aim of the book is to help you gain an in-depth understanding...... of the phenomenon of translation and to provide you with a conceptual framework for the analysis of various aspects of professional translation. Intended readers are students of translation and languages, but the book will also be relevant for others who are interested in the theory and practice of translation...... - translators, language teachers, translation users and literary, TV and film critics, for instance. Discussions focus on translation between Danish and English....

  20. Understanding Resilience

    Directory of Open Access Journals (Sweden)

    Gang eWu

    2013-02-01

    Full Text Available Resilience is the ability to adapt successfully in the face of stress and adversity. Stressful life events, trauma and chronic adversity can have a substantial impact on brain function and structure, and can result in the development of PTSD, depression and other psychiatric disorders. However, most individuals do not develop such illnesses after experiencing stressful life events, and are thus thought to be resilient. Resilience as successful adaptation relies on effective responses to environmental challenges and ultimate resistance to the deleterious effects of stress, therefore a greater understanding of the factors that promote such effects is of great relevance. This review focuses on recent findings regarding genetic, epigenetic, developmental, psychosocial and neurochemical factors that are considered essential contributors to the development of resilience. Neural circuits and pathways involved in mediating resilience are also discussed. The growing understanding of resilience factors will hopefully lead to the development of new pharmacological and psychological interventions for enhancing resilience and mitigating the untoward consequences.

  1. Understand electronics

    CERN Document Server

    Bishop, Owen

    2013-01-01

    Understand Electronics provides a readable introduction to the exciting world of electronics for the student or enthusiast with little previous knowledge. The subject is treated with the minimum of mathematics and the book is extensively illustrated.This is an essential guide for the newcomer to electronics, and replaces the author's best-selling Beginner's Guide to Electronics.The step-by-step approach makes this book ideal for introductory courses such as the Intermediate GNVQ.

  2. Understanding unemployment

    OpenAIRE

    Guillaume Rocheteau

    2006-01-01

    Modern economists have built models of the labor market, which isolate the market’s key drivers and describe the way these interact to produce particular levels of unemployment. One of the most popular models used by macroeconomists today is the search-matching model of equilibrium unemployment. We explain this model, and show how it can be applied to understand the way various policies, such as unemployment benefits, taxes, or technological changes, can affect the unemployment rate.

  3. Understanding Technology?

    Directory of Open Access Journals (Sweden)

    Erik Bendtsen

    2016-11-01

    Full Text Available We are facing radical changes in our ways of living in the nearest future. Not necessarily of our own choice, but because tchnological development is moving so fast, that it will have still greater impact on many aspects of our lives. We have seen the beginnings of that change within the latest 35 years or so, but according to newest research that change will speed up immensely in the nearest years to come. The impact of that change or these changes will affect our working life immensely as a consequence of automation. How these changes are brought about and which are their consequences in a broad sense is being attempted to be understood and guessed by researchers. No one knows for sure, but specific patterns are visible. This paper will not try to guess, what will come, but will rather try to understand the deepest ”nature” of technology in order to understand the driving factors in this development: the genesis of technology in a broad sense in order to contibute to the understanding of the basis for the expected development.

  4. 2012 Gordon Research Conference on Defects in Semiconductors - Formal Schedule and Speaker/Poster Program

    Energy Technology Data Exchange (ETDEWEB)

    Glaser, Evan [Naval Research Lab. (NRL), Washington, DC (United States)

    2012-08-17

    The meeting shall strive to develop and further the fundamental understanding of defects and their roles in the structural, electronic, optical, and magnetic properties of bulk, thin film, and nanoscale semiconductors and device structures. Point and extended defects will be addressed in a broad range of electronic materials of particular current interest, including wide bandgap semiconductors, metal-oxides, carbon-based semiconductors (e.g., diamond, graphene, etc.), organic semiconductors, photovoltaic/solar cell materials, and others of similar interest. This interest includes novel defect detection/imaging techniques and advanced defect computational methods.

  5. Rail inspection of RCF defects

    Directory of Open Access Journals (Sweden)

    Z. Popović

    2013-10-01

    Full Text Available Rail defects due to rolling contact fatigue (RCF threaten the traffic safety around the world. That hazard is more distinct on railways without adequate maintenance strategy. Realization of interoperability of European railway network demands from every infrastructure manager to have a maintenance plan for the infrastructure subsystem. Besides that, this plan includes rail inspection and strategy against RCF defects. This paper emphasizes the importance of rail inspection and early detection of RCF because the most of RCF crack should be removed in rail grinding campaigns (preventive, cyclical and corrective activities during the whole rail service life.

  6. Defect characterization with positron annihilation

    International Nuclear Information System (INIS)

    Granatelli, L.; Lynn, K.G.

    1980-01-01

    Positron annihilation in metal crystals is reviewed. A brief introduction to the positron annihilation technique is presented first. Then the ability of the positron technique to perform microstructural characterization of four types of lattice defects (vacancies, voids, dislocations, grain boundaries) is discussed. It is frequently not possible to obtain samples that contain only one type of defect in nonnegligible concentrations. Such situations exist for some alloys and for fatigued metal samples. Finally, the current limitations and some future prospects of the technique are presented. 79 references, 14 figures, 1 table

  7. Understanding Magnitudes to Understand Fractions

    Science.gov (United States)

    Gabriel, Florence

    2016-01-01

    Fractions are known to be difficult to learn and difficult to teach, yet they are vital for students to have access to further mathematical concepts. This article uses evidence to support teachers employing teaching methods that focus on the conceptual understanding of the magnitude of fractions.

  8. Testing Understanding and Understanding Testing.

    Science.gov (United States)

    Pedersen, Jean; Ross, Peter

    1985-01-01

    Provides examples in which graphs are used in the statements of problems or in their solutions as a means of testing understanding of mathematical concepts. Examples (appropriate for a beginning course in calculus and analytic geometry) include slopes of lines and curves, quadratic formula, properties of the definite integral, and others. (JN)

  9. Electrically active defects in solar grade multicrystalline silicon

    DEFF Research Database (Denmark)

    Dahl, Espen

    2013-01-01

    Shortage in high purity silicon feedstock, as a result of the formidable increased demand for solar cell devices during the last two decades, can be mitigated by the introduction of cheaper feedstock of solar grade (So-G) quality. Silicon produced through the metallurgical process route has shown...... the potential to be such a feedstock. However, this feedstock has only few years of active commercial history and the detailed understanding of the nature of structural defects in this material still has fundamental shortcomings. In this thesis the electrical activity of structural defects, commonly associated...

  10. Influence of defects on the vibrations of rotating systems

    International Nuclear Information System (INIS)

    Lazarus, A.

    2008-01-01

    For high rotation speeds, the imperfections (cracks, anisotropy...) of rotating machinery of the energy sector lead to a specific vibratory behavior which can damage the machine. The simulation of rotating machinery are usually realized for systems without defect. The aim of this thesis is to understand the influence of defects and to propose an algorithm to predict the dynamical behavior. In a first part the author studies the simplified rotating oscillators to propose a numerical method in order to taking into account the dynamic of these systems. This method is then applied to real rotating machinery with the Cast3m software. The numerical results are validated with experiments. (A.L.B.)

  11. Production behavior of irradiation defects in solid breeder materials

    Energy Technology Data Exchange (ETDEWEB)

    Moriyama, Hirotake; Moritani, Kimikazu [Kyoto Univ. (Japan)

    1998-03-01

    The irradiation effects in solid breeder materials are important for the performance assessment of fusion reactor blanket systems. For a clearer understanding of such effects, we have studied the production behavior of irradiation defects in some lithium ceramics by an in-situ luminescence measurement technique under ion beam irradiation. The luminescence spectra were measured at different temperatures, and the temperature-transient behaviors of luminescence intensity were also measured. The production mechanisms of irradiation defects were discussed on the basis of the observations. (author)

  12. Defects in zinc oxide grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ling, Francis C.C., E-mail: ccling@hku.hk [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Wang, Zilan; Ping Ho, Lok; Younas, M. [Department of Physics, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Anwand, W.; Wagner, A. [Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Su, S.C. [Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou 510631 (China); Shan, C.X. [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2016-01-01

    ZnO films are grown on c-plane sapphire using the pulsed laser deposition method. Systematic studies on the effects of annealing are performed to understand the thermal evolutions of the defects in the films. Particular attention is paid to the discussions of the ZnO/sapphire interface thermal stability, the Zn-vacancy related defects having different microstructures, the origins of the green luminescence (∼2.4–2.5 eV) and the near band edge (NBE) emission at 3.23 eV.

  13. Defects in Cu(In,Ga)Se{sub 2} chalcopyrite semiconductors: a comparative study of material properties, defect states, and photovoltaic performance

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Qing; Gunawan, Oki; Copel, Matthew; Reuter, Kathleen B; Chey, S Jay; Mitzi, David B [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Deline, Vaughn R [IBM Almaden Resesarch Center, San Jose, CA (United States)

    2011-10-15

    Understanding defects in Cu(In,Ga)(Se,S){sub 2} (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is a critical but challenging undertaking due to the complex nature of this polycrystalline compound semiconductor. Here we present a systematic comparative study wherein varying defect density levels in CIGS films were intentionally induced by growing CIGS grains using different selenium activity levels. Material characterization results by techniques including X-ray diffraction, scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and medium energy ion scattering indicate that this process variation, although not significantly affecting CIGS grain structure, crystal orientation, or bulk composition, leads to enhanced formation of a defective chalcopyrite layer with high density of indium or gallium at copper antisite defects ((In, Ga){sub Cu}) near the CIGS surface, for CIGS films grown with insufficient selenium supply. This defective layer or the film growth conditions associated with it is further linked with observed current-voltage characteristics, including rollover and crossover behavior, and a defect state at around 110 meV (generally denoted as the N1 defect) commonly observed in admittance spectroscopy. The impact of the (In, Ga){sub Cu} defects on device PV performance is also established. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Structural defects in cubic semiconductors characterized by aberration-corrected scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Arroyo Rojas Dasilva, Yadira; Kozak, Roksolana; Erni, Rolf; Rossell, Marta D., E-mail: marta.rossell@empa.ch

    2017-05-15

    The development of new electro-optical devices and the realization of novel types of transistors require a profound understanding of the structural characteristics of new semiconductor heterostructures. This article provides a concise review about structural defects which occur in semiconductor heterostructures on the basis of micro-patterned Si substrates. In particular, one- and two-dimensional crystal defects are being discussed which are due to the plastic relaxation of epitaxial strain caused by the misfit of crystal lattices. Besides a few selected examples from literature, we treat in particular crystal defects occurring in GaAs/Si, Ge/Si and β-SiC/Si structures which are studied by high-resolution annular dark-field scanning transmission electron microscopy. The relevance of this article is twofold; firstly, it should provide a collection of data which are of help for the identification and characterization of defects in cubic semiconductors by means of atomic-resolution imaging, and secondly, the experimental data shall provide a basis for advancing the understanding of device characteristics with the aid of theoretical modelling by considering the defective nature of strained semiconductor heterostructures. - Highlights: • The heterogeneous integration of high-quality compound semiconductors remains a challenge. • Lattice defects cause severe degradation of the semiconductor device performances. • Aberration-corrected HAADF-STEM allows atomic-scale characterization of defects. • An overview of lattice defects found in cubic semiconductors is presented. • Theoretical modelling and calculations are needed to determine the defect properties.

  15. Understanding uncertainty

    CERN Document Server

    Lindley, Dennis V

    2013-01-01

    Praise for the First Edition ""...a reference for everyone who is interested in knowing and handling uncertainty.""-Journal of Applied Statistics The critically acclaimed First Edition of Understanding Uncertainty provided a study of uncertainty addressed to scholars in all fields, showing that uncertainty could be measured by probability, and that probability obeyed three basic rules that enabled uncertainty to be handled sensibly in everyday life. These ideas were extended to embrace the scientific method and to show how decisions, containing an uncertain element, could be rationally made.

  16. A Study on the Effects of Ball Defects on the Fatigue Life in Hybrid Bearings

    Science.gov (United States)

    Tang, Ching-Yao; Foerster, Chad E.; O'Brien, Michael J.; Hardy, Brian S.; Goyal, Vinay K.; Nelson, Benjamin A.; Robinson, Ernest Y.; Ward, Peter C.; Hilton, Michael R.

    2014-01-01

    Hybrid ball bearings using silicon nitride ceramic balls with steel rings are increasingly being used in space mechanism applications due to their high wear resistance and long rolling contact fatigue life. However, qualitative and quantitative reports of the effects of ball defects that cause early fatigue failure are rare. We report on our approach to study these effects. Our strategy includes characterization of defects encountered in use, generation of similar defects in a laboratory setting, execution of full-scale bearing tests to obtain lifetimes, post-test characterization, and related finite-element modeling to understand the stress concentration of these defects. We have confirmed that at least one type of defect of appropriate size can significantly reduce fatigue life. Our method can be used to evaluate other defects as they occur or are encountered.

  17. What Are Congenital Heart Defects?

    Science.gov (United States)

    ... a baby with a congenital heart defect. Family history and genetics Congenital heart disease is not usually passed along ... you or your child to a specialist in genetic testing. Cardiac MRI to diagnose a ... Factors to review family history, smoking, and medicines that increase your risk of ...

  18. Nuclear Pasta: Topology and Defects

    Science.gov (United States)

    da Silva Schneider, Andre; Horowitz, Charles; Berry, Don; Caplan, Matt; Briggs, Christian

    2015-04-01

    A layer of complex non-uniform phases of matter known as nuclear pasta is expected to exist at the base of the crust of neutron stars. Using large scale molecular dynamics we study the topology of some pasta shapes, the formation of defects and how these may affect properties of neutron star crusts.

  19. Defect branes as Alice strings

    International Nuclear Information System (INIS)

    Okada, Takashi; Sakatani, Yuho

    2015-01-01

    There exist various defect-brane backgrounds in supergravity theories which arise as the low energy limit of string theories. These backgrounds typically have non-trivial monodromies, and if we move a charged probe around the center of a defect, its charge will be changed by the action of the monodromy. During the process, the charge conservation law seems to be violated. In this paper, to resolve this puzzle, we examine a dynamics of the charge changing process and show that the missing charge of the probe is transferred to the background. We then explicitly construct the resultant background after the charge transfer process by utilizing dualities. This background has the same monodromy as the original defect brane, but has an additional charge which does not have any localized source. In the literature, such a charge without localized source is known to appear in the presence of Alice strings. We argue that defect branes can in fact be regarded as a realization of Alice strings in string theory and examine the charge transfer process from that perspective.

  20. Defect branes as Alice strings

    Energy Technology Data Exchange (ETDEWEB)

    Okada, Takashi [Theoretical Biology Laboratory, RIKEN,Wako 351-0198 (Japan); Sakatani, Yuho [Department of Physics and Astronomy,Seoul National University, Seoul 151-747 (Korea, Republic of)

    2015-03-25

    There exist various defect-brane backgrounds in supergravity theories which arise as the low energy limit of string theories. These backgrounds typically have non-trivial monodromies, and if we move a charged probe around the center of a defect, its charge will be changed by the action of the monodromy. During the process, the charge conservation law seems to be violated. In this paper, to resolve this puzzle, we examine a dynamics of the charge changing process and show that the missing charge of the probe is transferred to the background. We then explicitly construct the resultant background after the charge transfer process by utilizing dualities. This background has the same monodromy as the original defect brane, but has an additional charge which does not have any localized source. In the literature, such a charge without localized source is known to appear in the presence of Alice strings. We argue that defect branes can in fact be regarded as a realization of Alice strings in string theory and examine the charge transfer process from that perspective.

  1. Ocular defects in cerebral palsy

    Directory of Open Access Journals (Sweden)

    Katoch Sabita

    2007-01-01

    Full Text Available There is a high prevalence of ocular defects in children with developmental disabilities. This study evaluated visual disability in a group of 200 cerebral palsy (CP patients and found that 68% of the children had significant visual morbidity. These findings emphasize the need for an early ocular examination in patients with CP.

  2. Characterization of point defects in monolayer arsenene

    Science.gov (United States)

    Liang, Xiongyi; Ng, Siu-Pang; Ding, Ning; Wu, Chi-Man Lawrence

    2018-06-01

    Topological defects that are inevitably found in 2D materials can dramatically affect their properties. Using density functional theory (DFT) calculations and ab initio molecular dynamics (AIMD) method, the structural, thermodynamic, electronic and magnetic properties of six types of typical point defects in arsenene, i.e. the Stone-Wales defect, single and double vacancies and adatoms, were systemically studied. It was found that these defects were all more easily generated in arsenene with lower formation energies than those with graphene and silicene. Stone-Wales defects can be transformed from pristine arsenene by overcoming a barrier of 2.19 eV and single vacancy defects tend to coalesce into double vacancy defects by diffusion. However, a type of adatom defect does not exhibit kinetic stability at room temperature. In addition, SV defects and another type of adatom defect can remarkably affect the electronic and magnetic properties of arsenene, e.g. they can introduce localized states near the Fermi level, as well as a strongly local magnetic moment due to dangling bond and unpaired electron. Furthermore, the simulated scanning tunneling microscopy (STM) and Raman spectroscopy were computed and the types of point defects can be fully characterized by correlating the STM images and Raman spectra to the defective atomistic structures. The results provide significant insights to the effect of defects in arsenene for potential applications, as well as identifications of two helpful tools (STM and Raman spectroscopy) to distinguish the type of defects in arsenene for future experiments.

  3. Understanding analysis

    CERN Document Server

    Abbott, Stephen

    2015-01-01

    This lively introductory text exposes the student to the rewards of a rigorous study of functions of a real variable. In each chapter, informal discussions of questions that give analysis its inherent fascination are followed by precise, but not overly formal, developments of the techniques needed to make sense of them. By focusing on the unifying themes of approximation and the resolution of paradoxes that arise in the transition from the finite to the infinite, the text turns what could be a daunting cascade of definitions and theorems into a coherent and engaging progression of ideas. Acutely aware of the need for rigor, the student is much better prepared to understand what constitutes a proper mathematical proof and how to write one. Fifteen years of classroom experience with the first edition of Understanding Analysis have solidified and refined the central narrative of the second edition. Roughly 150 new exercises join a selection of the best exercises from the first edition, and three more project-sty...

  4. Understanding ayurveda.

    Science.gov (United States)

    Gadgil, Vaidya Dilip

    2010-01-01

    Ayurveda needs to achieve its full potential both in India and globally. This requires imparting to its students full appreciation of Ayurveda's power and strength, particularly proper understanding of the advantages of applying it to treat chronic and acute diseases. To this end, we explain the necessity of learning Sanskrit as a medium of study, and the advantages of learning the Texts in the traditional way, rather than relying on translations with all the loss of meaning and precision, which that entails. We emphasize the use of Triskandhakosha as a means to fully understand Ayurveda fundamental concepts and technical terms, so that all their shades of meaning are fully understood, and all their usages given in different places in the texts. Only by such methods can full appreciation of Ayurvedic wisdom be achieved, and the full depth and power of its knowledge be applied. Only then will its true status among systems of medicine come to be appreciated, either in India or more widely in the world as a whole.

  5. Understanding Ayurveda

    Directory of Open Access Journals (Sweden)

    Vaidya Dilip Gadgil

    2010-01-01

    Full Text Available Ayurveda needs to achieve its full potential both in India and globally. This requires imparting to its students full appreciation of Ayurveda′s power and strength, particularly proper understanding of the advantages of applying it to treat chronic and acute diseases. To this end, we explain the necessity of learning Sanskrit as a medium of study, and the advantages of learning the Texts in the traditional way, rather than relying on translations with all the loss of meaning and precision, which that entails. We emphasize the use of Triskandhakosha as a means to fully understand Ayurveda fundamental concepts and technical terms, so that all their shades of meaning are fully understood, and all their usages given in different places in the texts. Only by such methods can full appreciation of Ayurvedic wisdom be achieved, and the full depth and power of its knowledge be applied. Only then will its true status among systems of medicine come to be appreciated, either in India or more widely in the world as a whole.

  6. Nanocarbon: Defect Architectures and Properties

    Science.gov (United States)

    Vuong, Amanda

    The allotropes of carbon make its solid phases amongst the most diverse of any element. It can occur naturally as graphite and diamond, which have very different properties that make them suitable for a wide range of technological and commercial purposes. Recent developments in synthetic carbon include Highly Oriented Pyrolytic Graphite (HOPG) and nano-carbons, such as fullerenes, nanotubes and graphene. The main industrial application of bulk graphite is as an electrode material in steel production, but in purified nuclear graphite form, it is also used as a moderator in Advanced Gas-cooled Reactors across the United Kingdom. Both graphene and graphite are damaged over time when subjected to bombardment by electrons, neutrons or ions, and these have a wide range of effects on their physical and electrical properties, depending on the radiation flux and temperature. This research focuses on intrinsic defects in graphene and dimensional change in nuclear graphite. The method used here is computational chemistry, which complements physical experiments. Techniques used comprise of density functional theory (DFT) and molecular dynamics (MD), which are discussed in chapter 2 and chapter 3, respectively. The succeeding chapters describe the results of simulations performed to model defects in graphene and graphite. Chapter 4 presents the results of ab initio DFT calculations performed to investigate vacancy complexes that are formed in AA stacked bilayer graphene. In AB stacking, carbon atoms surrounding the lattice vacancies can form interlayer structures with sp2 bonding that are lower in energy compared to in-plane reconstructions. From the investigation of AA stacking, sp2 interlayer bonding of adjacent multivacancy defects in registry creates a type of stable sp2 bonded wormhole between the layers. Also, a new class of mezzanine structure characterised by sp3 interlayer bonding, resembling a prismatic vacancy loop has also been identified. The mezzanine, which is a

  7. Diffusive, Structural, Optical, and Electrical Properties of Defects in Semiconductors

    CERN Multimedia

    Wagner, F E

    2002-01-01

    Electronic properties of semiconductors are extremely sensitive to defects and impurities that have localized electronic states with energy levels in the band gap of the semiconductor. Spectroscopic techniques like photoluminescence (PL), deep level transient spectroscopy (DLTS), or Hall effect, that are able to detect and characterize band gap states do not reveal direct information about their microscopic origin. To overcome this chemical "blindness", the present approach is to use radioactive isotopes as a tracer. Moreover, the recoil energies involved in $\\beta$ and $\\gamma$-decays can be used to create intrinsic isolated point defects (interstitials, vacancies) in a controlled way. A microscopic insight into the structure and the thermodynamic properties of complexes formed by interacting defects can be gained by detecting the hyperfine interaction between the nuclear moments of radioactive dopants and the electromagnetic fields present at the site of the radioactive nucleus. The understanding and the co...

  8. Atomic Defects and Doping of Monolayer NbSe2.

    Science.gov (United States)

    Nguyen, Lan; Komsa, Hannu-Pekka; Khestanova, Ekaterina; Kashtiban, Reza J; Peters, Jonathan J P; Lawlor, Sean; Sanchez, Ana M; Sloan, Jeremy; Gorbachev, Roman V; Grigorieva, Irina V; Krasheninnikov, Arkady V; Haigh, Sarah J

    2017-03-28

    We have investigated the structure of atomic defects within monolayer NbSe 2 encapsulated in graphene by combining atomic resolution transmission electron microscope imaging, density functional theory (DFT) calculations, and strain mapping using geometric phase analysis. We demonstrate the presence of stable Nb and Se monovacancies in monolayer material and reveal that Se monovacancies are the most frequently observed defects, consistent with DFT calculations of their formation energy. We reveal that adventitious impurities of C, N, and O can substitute into the NbSe 2 lattice stabilizing Se divacancies. We further observe evidence of Pt substitution into both Se and Nb vacancy sites. This knowledge of the character and relative frequency of different atomic defects provides the potential to better understand and control the unusual electronic and magnetic properties of this exciting two-dimensional material.

  9. Defect engineering of the electrochemical characteristics of carbon nanotube varieties

    International Nuclear Information System (INIS)

    Hoefer, Mark A.; Bandaru, Prabhakar R.

    2010-01-01

    The electrochemical behavior of carbon nanotubes (CNTs) containing both intrinsic and extrinsically introduced defects has been investigated through the study of bamboo and hollow multiwalled CNT morphologies. The controlled addition of argon ions was used for varying the charge and type of extrinsic defects. It was indicated from Raman spectroscopy and voltammetry that the electrocatalytic response of hollow type CNTs could be tailored more significantly, compared to bamboo type CNTs which have innately high reactive site densities and are less amenable to modification. An in-plane correlation length parameter was used to understand the variation of the defect density as a function of argon ion irradiation. The work has implications in the design of nanotube based chemical sensors, facilitated through the introduction of suitable reactive sites.

  10. Defect engineering of the electrochemical characteristics of carbon nanotube varieties

    Science.gov (United States)

    Hoefer, Mark A.; Bandaru, Prabhakar R.

    2010-08-01

    The electrochemical behavior of carbon nanotubes (CNTs) containing both intrinsic and extrinsically introduced defects has been investigated through the study of bamboo and hollow multiwalled CNT morphologies. The controlled addition of argon ions was used for varying the charge and type of extrinsic defects. It was indicated from Raman spectroscopy and voltammetry that the electrocatalytic response of hollow type CNTs could be tailored more significantly, compared to bamboo type CNTs which have innately high reactive site densities and are less amenable to modification. An in-plane correlation length parameter was used to understand the variation of the defect density as a function of argon ion irradiation. The work has implications in the design of nanotube based chemical sensors, facilitated through the introduction of suitable reactive sites.

  11. A Study of Defect Behavior in Almandine Garnet

    Science.gov (United States)

    Geiger, C. A.; Brearley, A. J.; Dachs, E.; Tipplet, G.; Rossman, G. R.

    2016-12-01

    Transport and diffusion in crystals are controlled by defects. However, a good understanding of the defect types in many silicates, including garnet, is not at hand. We undertook a study on synthetic almandine, ideal end-member Fe3Al2Si3O12, to better understand its precise chemical and physical properties and defect behavior. Crystals were synthesized at high pressures and temperatures under different fO2 conditions using various starting materials with H2O and without. The almandine obtained came in polycrystalline and single-crystal form. The synthetic reaction products and crystals were carefully characterized using X-ray powder diffraction, electron microprobe and TEM analysis and with 57Fe Mössbauer, UV/VIS single-crystal absorption and IR single-crystal spectroscopy. Various possible intrinsic defects, such as the Frenkel, Schottky and site-disorder types, along with Fe3+, in both synthetic and natural almandine crystals, were analyzed based on model defects expressed in Kröger-Vink notation. Certain types of minor microscopic- to macroscopic-sized precipitation or exsolution phases, including some that are nanosized, that are observed in synthetic almandine (e.g., magnetite), as well as in more compositionally complex natural crystals (e.g., magnetite, rutile, ilmenite), may result from defect reactions. An explanation for their origin through minor amounts of defects in garnet has certain advantages over other models that have been put forth in the literature that assume strict garnet stoichiometry for their formation and/or open-system atomic transport over relatively long length scales. Physical properties, including magnetic, electrical conductivity and diffusion behavior, as well as the color, of almandine are also analyzed in terms of various possible model defects. It is difficult, if not impossible, to synthesize stoichiometric end-member almandine, Fe3Al2Si3O12, in the laboratory, as small amounts of extrinsic OH- and/or Fe3+ defects, for example

  12. Defect-induced ferromagnetism in semiconductors: A controllable approach by particle irradiation

    International Nuclear Information System (INIS)

    Zhou, Shengqiang

    2014-01-01

    Making semiconductors ferromagnetic has been a long dream. One approach is to dope semiconductors with transition metals (TM). TM ions act as local moments and they couple with free carriers to develop collective magnetism. However, there are no fundamental reasons against the possibility of local moment formation from localized sp states. Recently, ferromagnetism was observed in nonmagnetically doped, but defective semiconductors or insulators including ZnO and TiO 2 . This kind of observation challenges the conventional understanding of ferromagnetism. Often the defect-induced ferromagnetism has been observed in samples prepared under non-optimized condition, i.e. by accident or by mistake. Therefore, in this field theory goes much ahead of experimental investigation. To understand the mechanism of the defect-induced ferromagnetism, one needs a better controlled method to create defects in the crystalline materials. As a nonequilibrium and reproducible approach of inducing defects, ion irradiation provides such a possibility. Energetic ions displace atoms from their equilibrium lattice sites, thus creating mainly vacancies, interstitials or antisites. The amount and the distribution of defects can be controlled by the ion fluence and energy. By ion irradiation, we have generated defect-induced ferromagnetism in ZnO, TiO 2 and SiC. In this short review, we also summarize some results by other groups using energetic ions to introduce defects, and thereby magnetism in various materials. Ion irradiation combined with proper characterizations of defects could allow us to clarify the local magnetic moments and the coupling mechanism in defective semiconductors. Otherwise we may have to build a new paradigm to understand the defect-induced ferromagnetism

  13. Determination of linear defect depths from eddy currents disturbances

    Science.gov (United States)

    Ramos, Helena Geirinhas; Rocha, Tiago; Pasadas, Dário; Ribeiro, Artur Lopes

    2014-02-01

    One of the still open problems in the inspection research concerns the determination of the maximum depth to which a surface defect goes. Eddy current testing being one of the most sensitive well established inspection methods, able to detect and characterize different type of defects in conductive materials, is an adequate technique to solve this problem. This paper reports a study concerning the disturbances in the magnetic field and in the lines of current due to a machined linear defect having different depths in order to extract relevant information that allows the determination of the defect characteristics. The image of the eddy currents (EC) is paramount to understand the physical phenomena involved. The EC images for this study are generated using a commercial finite element model (FLUX). The excitation used produces a uniform magnetic field on the plate under test in the absence of defects and the disturbances due to the defects are compared with those obtained from experimental measurements. In order to increase the limited penetration depth of the method giant magnetoresistors (GMR) are used to lower the working frequency. The geometry of the excitation planar coil produces a uniform magnetic field on an area of around the GMR sensor, inducing a uniform eddy current distribution on the plate. In the presence of defects in the material surface, the lines of currents inside the material are deviated from their uniform direction and the magnetic field produced by these currents is sensed by the GMR sensor. Besides the theoretical study of the electromagnetic system, the paper describes the experiments that have been carried out to support the theory and conclusions are drawn for cracks having different depths.

  14. Understanding physics

    CERN Document Server

    Cassidy, David; Rutherford, James

    2002-01-01

    Understanding Physics provides a thorough grounding in contemporary physics while placing physics into its social and historical context Based in large part on the highly respected Project Physics Course developed by two of the authors, it also integrates the results of recent pedagogical research The text thus - teaches about the basic phenomena in the physical world and the concepts developed to explain them - shows that science is a rational human endeavor with a long and continuing tradition, involving many different cultures and people - develops facility in critical thinking, reasoned argumentation, evaluation of evidence, mathematical modeling, and ethical values The treatment emphasizes not only what we know but also how we know it, why we believe it, and what effects that knowledge has - Why do we believe the Earth and planets revolve around the Sun? - Why do we believe that matter is made of atoms? - How do relativity theory and quantum mechanics alter our conception of Nature and in what ways do th...

  15. Understanding users

    DEFF Research Database (Denmark)

    Johannsen, Carl Gustav Viggo

    2014-01-01

    Segmentation of users can help libraries in the process of understanding user similarities and differences. Segmentation can also form the basis for selecting segments of target users and for developing tailored services for specific target segments. Several approaches and techniques have been...... tested in library contexts and the aim of this article is to identify the main approaches and to discuss their perspectives, including their strenghts and weaknesses in, especially, public library contexts. The purpose is also to prsent and discuss the results of a recent - 2014 - Danish library user...... segmentation project using computer-generated clusters. Compared to traditional marketing texts, this article also tries to identify user segments or images or metaphors by the library profession itself....

  16. Fibrous metaphyseal defect (fibrous cortical defect, non-ossifying fibroma)

    International Nuclear Information System (INIS)

    Freyschmidt, J.; Saure, D.; Dammenhain, S.

    1981-01-01

    Fibrous cortical defect and nonossifying fibromas can be classified together as fibrous metaphyseal defects (FMD) since they have the same pahtological substrate, with a tendency to the same localisation around the knee, and occuring at the same age. They have a tendency to spontaneous healing, are clinically silent and are usually discovered accidentally during radiological examination. A radiological survey fo 5.674 metaphyseal regions in the upper and lower extremities of 2.065 unselected patients aged one to 20 years revealed an incidence of 1.8%; exlcusive examination of the distal femur showed an incidence of 2.7%. 96% of all lesions were in the lower extremities and only 4% in the upper. The marked discrepancy in the incidence rate between American and German publications is discussed. (orig.) [de

  17. Diameter Dependence of Planar Defects in InP Nanowires.

    Science.gov (United States)

    Wang, Fengyun; Wang, Chao; Wang, Yiqian; Zhang, Minghuan; Han, Zhenlian; Yip, SenPo; Shen, Lifan; Han, Ning; Pun, Edwin Y B; Ho, Johnny C

    2016-09-12

    In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is decreased to 10 nm, and the chemical analysis clearly indicates the drastic impact of In catalytic supersaturation in Au nanoparticles on the minimized planar defect formation in miniaturized nanowires. Specifically, during the chemical vapor deposition of InP nanowires, a significant amount of planar defects is created when the catalyst seed sizes are increased with the lower degree of In supersaturation as dictated by the Gibbs-Thomson effect, and an insufficient In diffusion (or Au-rich enhancement) would lead to a reduced and non-uniform In precipitation at the NW growing interface. The results presented here provide an insight into the fabrication of "bottom-up" InP NWs with minimized defect concentration which are suitable for various device applications.

  18. Positron lifetime calculation for defects and defect clusters in graphite

    International Nuclear Information System (INIS)

    Onitsuka, T.; Ohkubo, H.; Takenaka, M.; Tsukuda, N.; Kuramoto, E.

    2000-01-01

    Calculations of positron lifetime have been made for vacancy type defects in graphite and compared with experimental results. Defect structures were obtained in a model graphite lattice after including relaxation of whole lattice as determined by the molecular dynamics method, where the interatomic potential given by Pablo Andribet, Dominguez-Vazguez, Mari Carmen Perez-Martin, Alonso, Jimenez-Rodriguez [Nucl. Instrum. and Meth. 115 (1996) 501] was used. For the defect structures obtained via lattice relaxation positron lifetime was calculated under the so-called atomic superposition method. Positron lifetimes 204 and 222 ps were obtained for the graphite matrix and a single vacancy, respectively, which can be compared with the experimental results 208 and 233 ps. For planar vacancy clusters, e.g., vacancy loops, lifetime calculation was also made and indicated that lifetime increases with the number of vacancies in a cluster. This is consistent with the experimental result in the region of higher annealing temperature (above 1200 deg. C), where the increase of positron lifetime is seen, probably corresponding to the clustering of mobile vacancies

  19. Basement Membrane Defects in Genetic Kidney Diseases

    Directory of Open Access Journals (Sweden)

    Christine Chew

    2018-01-01

    Full Text Available The glomerular basement membrane (GBM is a specialized structure with a significant role in maintaining the glomerular filtration barrier. This GBM is formed from the fusion of two basement membranes during development and its function in the filtration barrier is achieved by key extracellular matrix components including type IV collagen, laminins, nidogens, and heparan sulfate proteoglycans. The characteristics of specific matrix isoforms such as laminin-521 (α5β2γ1 and the α3α4α5 chain of type IV collagen are essential for the formation of a mature GBM and the restricted tissue distribution of these isoforms makes the GBM a unique structure. Detailed investigation of the GBM has been driven by the identification of inherited abnormalities in matrix proteins and the need to understand pathogenic mechanisms causing severe glomerular disease. A well-described hereditary GBM disease is Alport syndrome, associated with a progressive glomerular disease, hearing loss, and lens defects due to mutations in the genes COL4A3, COL4A4, or COL4A5. Other proteins associated with inherited diseases of the GBM include laminin β2 in Pierson syndrome and LMX1B in nail patella syndrome. The knowledge of these genetic mutations associated with GBM defects has enhanced our understanding of cell–matrix signaling pathways affected in glomerular disease. This review will address current knowledge of GBM-associated abnormalities and related signaling pathways, as well as discussing the advances toward disease-targeted therapies for patients with glomerular disease.

  20. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  1. Automatic classification of blank substrate defects

    Science.gov (United States)

    Boettiger, Tom; Buck, Peter; Paninjath, Sankaranarayanan; Pereira, Mark; Ronald, Rob; Rost, Dan; Samir, Bhamidipati

    2014-10-01

    Mask preparation stages are crucial in mask manufacturing, since this mask is to later act as a template for considerable number of dies on wafer. Defects on the initial blank substrate, and subsequent cleaned and coated substrates, can have a profound impact on the usability of the finished mask. This emphasizes the need for early and accurate identification of blank substrate defects and the risk they pose to the patterned reticle. While Automatic Defect Classification (ADC) is a well-developed technology for inspection and analysis of defects on patterned wafers and masks in the semiconductors industry, ADC for mask blanks is still in the early stages of adoption and development. Calibre ADC is a powerful analysis tool for fast, accurate, consistent and automatic classification of defects on mask blanks. Accurate, automated classification of mask blanks leads to better usability of blanks by enabling defect avoidance technologies during mask writing. Detailed information on blank defects can help to select appropriate job-decks to be written on the mask by defect avoidance tools [1][4][5]. Smart algorithms separate critical defects from the potentially large number of non-critical defects or false defects detected at various stages during mask blank preparation. Mechanisms used by Calibre ADC to identify and characterize defects include defect location and size, signal polarity (dark, bright) in both transmitted and reflected review images, distinguishing defect signals from background noise in defect images. The Calibre ADC engine then uses a decision tree to translate this information into a defect classification code. Using this automated process improves classification accuracy, repeatability and speed, while avoiding the subjectivity of human judgment compared to the alternative of manual defect classification by trained personnel [2]. This paper focuses on the results from the evaluation of Automatic Defect Classification (ADC) product at MP Mask

  2. Cooperation and Defection in Ghetto

    Science.gov (United States)

    Kułakowski, Krzysztof

    We consider ghetto as a community of people ruled against their will by an external power. Members of the community feel that their laws are broken. However, attempts to leave ghetto makes their situation worse. We discuss the relation of the ghetto inhabitants to the ruling power in context of their needs, organized according to the Maslow hierarchy. Decisions how to satisfy successive needs are undertaken in cooperation with or defection the ruling power. This issue allows to construct the tree of decisions and to adopt the pruning technique from the game theory. Dynamics of decisions can be described within the formalism of fundamental equations. The result is that the strategy of defection is stabilized by the estimated payoff.

  3. Topological defects in open string field theory

    Science.gov (United States)

    Kojita, Toshiko; Maccaferri, Carlo; Masuda, Toru; Schnabl, Martin

    2018-04-01

    We show how conformal field theory topological defects can relate solutions of open string field theory for different boundary conditions. To this end we generalize the results of Graham and Watts to include the action of defects on boundary condition changing fields. Special care is devoted to the general case when nontrivial multiplicities arise upon defect action. Surprisingly the fusion algebra of defects is realized on open string fields only up to a (star algebra) isomorphism.

  4. Various Stone-Wales defects in phagraphene

    Science.gov (United States)

    Openov, L. A.; Podlivaev, A. I.

    2016-08-01

    Various Stone-Wales defects in phagraphene, which is a graphene allotrope, predicted recently are studied in terms of the nonorthogonal tight-binding model. The energies of the defect formation and the heights of energy barriers preventing the formation and annealing of the defects are found. Corresponding frequency factors in the Arrhenius formula are calculated. The evolution of the defect structure is studied in the real-time mode using the molecular dynamics method.

  5. Iatrogenic Urethral Defect Repairment: A Case Report

    Directory of Open Access Journals (Sweden)

    Ulas Fidan

    2013-10-01

    Full Text Available    Iatrogenic urethral defect is a complication that occurs after vaginal surgical procedures. Many surgical methods according to place of defect are described in case of injury of urethra. In this article, we reported the repairment of distal urethral defect with the help of greft taken from labia minor. This defect is made by the excision of the granulation tissue that occurred after chronic paraurethral  gland infection.

  6. Defect relaxation in disordered materials

    International Nuclear Information System (INIS)

    Crandell, R.S.

    1989-01-01

    Using an exponential distribution of activation barriers, annealing data for metastable effects in hydrogenated amorphous silicon, a-Si:H, are quantitatively explained. This includes the stretched exponential time dependence of annealing and a Meyer-Neldel rule for the annealing time constant. An exponential distribution of annealing energies arises because defects are frozen in during growth at high temperature. Mechanisms that lead to an exponential distribution of annealing energies are weak bond-breaking and charge trapping

  7. Understanding PISA

    Directory of Open Access Journals (Sweden)

    Stephen DOWNES

    2005-04-01

    Full Text Available Understanding PISA Stephen DOWNESMoncton, CANADA ABSTRACT The headline was dramatic enough to cause a ripple in the reading public. "Students who use computers a lot at school have worse maths and reading performance," noted the BBC news article, citing a 2004 study by Ludger Woessmann and Thomas Fuchs (Fuchs and Woessman, 2004. It was not long before the blogosphere took notice. Taking the theme and running with it, Alice and Bill ask, "Computers Make School Kids Dumber?" They theorize, "If you track the admitted decline of education, you'll probably notice that it follows along with the increase of technology in the classroom." In a similar vein, James Bartholomew asks, "Do you think that the government will turn down the volume of its boasting about how it has spent billions introducing computers in schools (while keeping down the pay of teachers so much that there are shortages? Do you think it will stop sending governors of state schools glossy pamphlets about insisting that computers are used in their schools as much as possible?" In this study, therefore, PISA looks well beyond educational attainment, and also includes school demographics, such as whether it is a public or private school, has large or small classes, or has access or not to technological resources. Finally, it does measure student information-their family background, access to books and computers and parental support as well. The PISA survey departs from previous surveys in disregarding the stated curricula of the schools being measured. Therefore, the conclusion is not surprising, nor even wrong for him to consider independently of any parental or teacher support, considered without reference to the software running on it, considered without reference to student attitudes and interests, does not positively impact an education. Finally, he focus on missing the reporting of results

  8. Curvature-Controlled Topological Defects

    Directory of Open Access Journals (Sweden)

    Luka Mesarec

    2017-05-01

    Full Text Available Effectively, two-dimensional (2D closed films exhibiting in-plane orientational ordering (ordered shells might be instrumental for the realization of scaled crystals. In them, ordered shells are expected to play the role of atoms. Furthermore, topological defects (TDs within them would determine their valence. Namely, bonding among shells within an isotropic liquid matrix could be established via appropriate nano-binders (i.e., linkers which tend to be attached to the cores of TDs exploiting the defect core replacement mechanism. Consequently, by varying configurations of TDs one could nucleate growth of scaled crystals displaying different symmetries. For this purpose, it is of interest to develop a simple and robust mechanism via which one could control the position and number of TDs in such atoms. In this paper, we use a minimal mesoscopic model, where variational parameters are the 2D curvature tensor and the 2D orientational tensor order parameter. We demonstrate numerically the efficiency of the effective topological defect cancellation mechanism to predict positional assembling of TDs in ordered films characterized by spatially nonhomogeneous Gaussian curvature. Furthermore, we show how one could efficiently switch among qualitatively different structures by using a relative volume v of ordered shells, which represents a relatively simple naturally accessible control parameter.

  9. Defect grating modes as superimposed grating states

    NARCIS (Netherlands)

    van Groesen, Embrecht W.C.; Sopaheluwakan, A.; Andonowati, A.; de Ridder, R.M; de Ridder, R.M.; Altena, G; Altena, G.; Geuzebroek, D.H.; Geuzenboek, D.; Dekker, R.; Dekker, R

    2003-01-01

    For a symmetric grating structure with a defect, we show that a fully transmitted defect mode in the band gap can be obtained as a superposition of two steady states: an amplified and an attenuated defect state. Without scanning the whole band gap by transmission calculations, this simplifies the

  10. Disc defect classification for optical disc drives

    NARCIS (Netherlands)

    Helvoirt, van J.; Leenknegt, G.A.L.; Steinbuch, M.; Goossens, H.J.

    2005-01-01

    Optical disc drives are subject to various disturbances and faults. A special type of fault is the so-called disc defect. In this paper we present an approach for disc defect classification. It is based on hierarchical clustering of measured signals that are affected by disc defects. The

  11. Metastable and bistable defects in silicon

    International Nuclear Information System (INIS)

    Mukashev, Bulat N; Abdullin, Kh A; Gorelkinskii, Yurii V

    2000-01-01

    Existing data on the properties and structure of metastable and bistable defects in silicon are analyzed. Primary radiation-induced defects (vacancies, self-interstitial atoms, and Frenkel pairs), complexes of oxygen, carbon, hydrogen, and other impurity atoms and defects with negative correlation energy are considered. (reviews of topical problems)

  12. Modelling water vapour permeability through atomic layer deposition coated photovoltaic barrier defects

    Energy Technology Data Exchange (ETDEWEB)

    Elrawemi, Mohamed, E-mail: Mohamed.elrawemi@hud.ac.uk [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Blunt, Liam; Fleming, Leigh [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom); Bird, David, E-mail: David.Bird@uk-cpi.com [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Robbins, David [Centre for Process Innovation Limited, Sedgefield, County Durham (United Kingdom); Sweeney, Francis [EPSRC Centre for Innovative Manufacturing in Advanced Metrology, School of Computing and Engineering, University of Huddersfield, Huddersfield (United Kingdom)

    2014-11-03

    Transparent barrier films such as Al{sub 2}O{sub 3} used for prevention of oxygen and/or water vapour permeation are the subject of increasing research interest when used for the encapsulation of flexible photovoltaic modules. However, the existence of micro-scale defects in the barrier surface topography has been shown to have the potential to facilitate water vapour ingress, thereby reducing cell efficiency and causing internal electrical shorts. Previous work has shown that small defects (≤ 3 μm lateral dimension) were less significant in determining water vapour ingress. In contrast, larger defects (≥ 3 μm lateral dimension) seem to be more detrimental to the barrier functionality. Experimental results based on surface topography segmentation analysis and a model presented in this paper will be used to test the hypothesis that the major contributing defects to water vapour transmission rate are small numbers of large defects. The model highlighted in this study has the potential to be used for gaining a better understanding of photovoltaic module efficiency and performance. - Highlights: • A model of water vapour permeation through barrier defects is presented. • The effect of the defects on the water vapour permeability is investigated. • Defect density correlates with water vapour permeability. • Large defects may dominate the permeation properties of the barrier film.

  13. Characterisation and modelling of defect formation in direct-chill cast AZ80 alloy

    Energy Technology Data Exchange (ETDEWEB)

    Mackie, D.; Robson, J.D.; Withers, P.J. [School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Turski, M. [Magnesium Elektron UK, Rake Lane, Manchester, M27 8BF (United Kingdom)

    2015-06-15

    Wrought magnesium alloys for demanding structural applications require high quality defect free cast feedstock. The aim of this study was to first identify and characterise typical defects in direct chill cast magnesium–aluminium–zinc (AZ) alloy billet and then use modelling to understand the origins of these defects so they can be prevented. Defects were first located using ultrasonic inspection and were then characterised using X-ray computed tomography (XCT) and serial sectioning, establishing the presence of oxide films and intermetallic particles Al{sub 8}Mn{sub 5} in all defects. A model was developed to predict the flow patterns and growth kinetics of the intermetallic phases during casting, which influence the formation of defects. Simulation of the growth of the intermetallic particles demonstrated that precipitation from the liquid occurs in the mould. The combination of the entrained oxide films and intermetallic particles recirculates in the liquid metal and continues to grow, until large enough to settle, which is predicted to occur at the centre of the mould where the flow is the slowest. Based on these predictions, strategies to reduce the susceptibility to defect formation are suggested. - Highlights: • Casting defects in magnesium direct chill casting have been imaged and characterised in 3-dimensions. • The occurrences of co-located clusters of particles and oxide films have been characterised and explained. • A coupled model has been developed to help interpret the observed trend for defects located towards the centre of billets.

  14. Characterisation and modelling of defect formation in direct-chill cast AZ80 alloy

    International Nuclear Information System (INIS)

    Mackie, D.; Robson, J.D.; Withers, P.J.; Turski, M.

    2015-01-01

    Wrought magnesium alloys for demanding structural applications require high quality defect free cast feedstock. The aim of this study was to first identify and characterise typical defects in direct chill cast magnesium–aluminium–zinc (AZ) alloy billet and then use modelling to understand the origins of these defects so they can be prevented. Defects were first located using ultrasonic inspection and were then characterised using X-ray computed tomography (XCT) and serial sectioning, establishing the presence of oxide films and intermetallic particles Al 8 Mn 5 in all defects. A model was developed to predict the flow patterns and growth kinetics of the intermetallic phases during casting, which influence the formation of defects. Simulation of the growth of the intermetallic particles demonstrated that precipitation from the liquid occurs in the mould. The combination of the entrained oxide films and intermetallic particles recirculates in the liquid metal and continues to grow, until large enough to settle, which is predicted to occur at the centre of the mould where the flow is the slowest. Based on these predictions, strategies to reduce the susceptibility to defect formation are suggested. - Highlights: • Casting defects in magnesium direct chill casting have been imaged and characterised in 3-dimensions. • The occurrences of co-located clusters of particles and oxide films have been characterised and explained. • A coupled model has been developed to help interpret the observed trend for defects located towards the centre of billets

  15. Photographic guide of selected external defect indicators and associated internal defects in sugar maple

    Science.gov (United States)

    Everette D. Rast; John A. Beaton; David L. Sonderman

    1991-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for sugar maple. Eleven types of external...

  16. Photographic guide of selected external defect indicators and associated internal defects in yellow-poplar

    Science.gov (United States)

    Everette D. Rast; John A. Beaton; David L. Sonderman

    1991-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for yellow-poplar. Twelve types of external...

  17. Photographic guide of selected external defect indicators and associated internal defects in yellow birch

    Science.gov (United States)

    Everette D. Rast; John A. Beaton; David L. Sonderman

    1991-01-01

    To properly classify or grade logs or trees, one must be able to correctly identify defect indicators and assess the effect of the underlying defect on possible end products. This guide assists the individual in identifying the surface defect indicator and shows the progressive stages of the defect throughout its development for yellow birch. Eleven types of external...

  18. Defect kinetics and resistance to amorphization in zirconium carbide

    International Nuclear Information System (INIS)

    Zheng, Ming-Jie; Szlufarska, Izabela; Morgan, Dane

    2015-01-01

    To better understand the radiation response of zirconium carbide (ZrC), and in particular its excellent resistance to amorphization, we have used density functional theory methods to study the kinetics of point defects in ZrC. The migration barriers and recombination barriers of the simple point defects are calculated using the ab initio molecular dynamics simulation and the nudged elastic band method. These barriers are used to estimate C and Zr interstitial and vacancy diffusion and Frenkel pair recombination rates. A significant barrier for C Frenkel pair recombination is found but it is shown that a large concentration of C vacancies reduces this barrier dramatically, allowing facile healing of radiation damage. The mechanisms underlying high resistance to amorphization of ZrC were analyzed from the perspectives of structural, thermodynamic, chemical and kinetic properties. This study provides insights into the amorphization resistance of ZrC as well as a foundation for understanding general radiation damage in this material

  19. Concurrence of metaphyseal fibrous defect and osteosarcoma

    International Nuclear Information System (INIS)

    Kyriakos, M.; Murphy, W.A.

    1981-01-01

    The case of a 15-year-old girl with juxtaposition of a femoral metaphyseal fibrous defect (fibrous cortical defect) and an osteosarcoma is reported. Despite the relatively common occurrence of metaphyseal fibrous defects, their reported association with other bone tumors is exceedingly rare. Only two previous acceptable examples of this association were found. Reports of malignant transformation of metaphyseal fibrous defect were reviewed and rejected because they lacked convincing radiologic or histopathologic evidence of a pre-existent benign fibrous lesion. The finding of a malignant bone tumor in association with a metaphyseal fibrous defect appears to be a chance occurrence. (orig.)

  20. Areva solutions for management of defective fuel

    International Nuclear Information System (INIS)

    Morlaes, I.; Vo Van, V.

    2014-01-01

    Defective fuel management is a major challenge for nuclear operators when all fuel must be long-term managed. This paper describes AREVA solutions for managing defective fuel. Transport AREVA performs shipments of defective fuel in Europe and proposes casks that are licensed for that purpose in Europe and in the USA. The paper presents the transport experience and the new European licensing approach of defective fuel transport. Dry Interim Storage AREVA is implementing the defective fuel storage in the USA, compliant with the Safety Authority's requirements. In Europe, AREVA is developing a new, more long-term oriented storage solution for defective fuel, the best available technology regarding safety requirements. The paper describes these storage solutions. Treatment Various types of defective fuel coming from around the world have been treated in the AREVA La Hague plant. Specific treatment procedures were developed when needed. The paper presents operational elements related to this experience. (authors)

  1. Point defects and atomic transport in crystals

    International Nuclear Information System (INIS)

    Lidiard, A.B.

    1981-02-01

    There are two principle aspects to the theory of atomic transport in crystals as caused by the action of point defects, namely (1) the calculation of relevant properties of the point defects (energies and other thermodynamic characteristics of the different possible defects, activation energies and other mobility parameters) and (2) the statistical mechanics of assemblies of defects, both equilibrium and non-equilibrium assemblies. In the five lectures given here both these aspects are touched on. The first two lectures are concerned with the calculation of relevant point defect properties, particularly in ionic crystals. The first lecture is more general, the second is concerned particularly with some recent calculations of the free volumes of formation of defects in various ionic solids; these solve a rather long-standing problem in this area. The remaining three lectures are concerned with the kinetic theory of defects mainly in relaxation, drift and diffusion situations

  2. Reduction of Defects in Germanium-Silicon

    Science.gov (United States)

    2003-01-01

    Crystals grown without contact with a container have far superior quality to otherwise similar crystals grown in direct contact with a container. In addition to float-zone processing, detached- Bridgman growth is a promising tool to improve crystal quality, without the limitations of float zoning or the defects introduced by normal Bridgman growth. Goals of this project include the development of the detached Bridgman process to be reproducible and well understood and to quantitatively compare the defect and impurity levels in crystals grown by these three methods. Germanium (Ge) and germanium-silicon (Ge-Si) alloys are being used. At MSFC, we are responsible for the detached Bridgman experiments intended to differentiate among proposed mechanisms of detachment, and to confirm or refine our understanding of detachment. Because the contact angle is critical to determining the conditions for detachment, the sessile drop method was used to measure the contact angles as a function of temperature and composition for a large number of substrates made of potential ampoule materials. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. Etch pit density (EPD) measurements of normal and detached Bridgman-grown Ge samples show a two order of magnitude improvement in the detached-grown samples. The nature and extent of detachment is determined by using profilometry in conjunction with optical and electron microscopy. The stability of detachment has been analyzed, and an empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed. We have investigated the effects on detachment of ampoule material, pressure difference above and below the melt, and Si concentration; samples that are nearly completely detached can be grown repeatedly in pBN. Current work is concentrated on developing a

  3. Packing defects into ordered structures

    DEFF Research Database (Denmark)

    Bechstein, R.; Kristoffersen, Henrik Høgh; Vilhelmsen, L.B.

    2012-01-01

    . With the help of density functional theory calculations we develop a complete structural model for the entire strand and demonstrate these adstructures to be more stable than an equivalent amount of bulk defects such as Ti interstitials. We argue that strands can form particularly easy on stepped surfaces......We have studied vicinal TiO2(110) surfaces by high-resolution scanning tunneling microscopy and density functional theory calculations. On TiO2 surfaces characterized by a high density of ⟨11̅ 1⟩ steps, scanning tunneling microscopy reveals a high density of oxygen-deficient strandlike adstructures...

  4. Effect of disorder and defects in ion-implanted semiconductors optical and photothermal characterization

    CERN Document Server

    Willardson, R K; Christofides, Constantinos; Ghibaudo, Gerard

    1997-01-01

    Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. Key Features * Provides basic knowledge of ion implantation-induced defects * Focuses on physical mechanisms of defect annealing * Utilizes electrical, physical, and optical characterization tools for processed semiconductors * Provides the basis for understanding the problems caused by the defects g...

  5. Ab-initio modelling of thermodynamics and kinetics of point defects in indium oxide

    International Nuclear Information System (INIS)

    Agoston, Peter; Klein, Andreas; Albe, Karsten; Erhart, Paul

    2008-01-01

    The electrical and optical properties of indium oxide films strongly vary with the processing parameters. Especially the oxygen partial pressure and temperature determine properties like electrical conductivity, composition and transparency. Since this material owes its remarkable properties like the intrinsic n-type conductivity to its defect chemistry, it is important to understand both, the equilibrium defect thermodynamics and kinetics of the intrinsic point defects. In this contribution we present a defect model based on DFT total energy calculations using the GGA+U method. Further, the nudged elastic band method is employed in order to obtain a set of migration barriers for each defect species. Due to the complicated crystal structure of indium oxide a Kinetic Monte-Carlo algorithm was implemented, which allows to determine diffusion coefficients. The bulk tracer diffusion constant is predicted as a function of oxygen partial pressure, Fermi level and temperature for the pure material

  6. Stability and kinetics of point defects in SiO2 and in SiC

    International Nuclear Information System (INIS)

    Roma, G.

    2012-01-01

    This document is conceived as an overview of Guido Roma's research achievements on defects stability and kinetics in two materials of interest in nuclear science and for many other application domains: silicon dioxide and silicon carbide. An extended summary in french is followed by the main document, in english. Chapter 1 describes the context, introduces the approach and explains the choice of silicon dioxide and silicon carbide. Chapter 2 discusses several approximations and specific issues of the application of Density Functional Theory to point defects in non-metallic materials for the study of defects energetics and diffusion. Chapter 3 is devoted to native defects in silicon dioxide and the understanding of self-diffusion in crystalline and amorphous SiO 2 . Chapter 4 summarises the results on native defects and palladium impurities in silicon carbide. A conclusion, including suggestions for future developments, closes the main part of the document. (author) [fr

  7. Evaluation of the Esthetic Properties of Developmental Defects of Enamel: A Spectrophotometric Clinical Study

    Directory of Open Access Journals (Sweden)

    Fabrizio Guerra

    2015-01-01

    Full Text Available Objectives. Detailed clinical quantification of optical properties of developmental defect of enamel is possible with spectrophotometric evaluation. Developmental defects of enamel (DDE are daily encountered in clinical practice. DDE are an alteration in quality and quantity of the enamel, caused by disruption and/or damage to the enamel organ during amelogenesis. Methods. Several clinical indices have been developed to categorize enamel defects based on their nature, appearance, microscopic features, or cause. A sample of 39 permanent teeth presenting DDE on labial surface was examined using the DDE Modified Index and SpectroShade evaluation. The spectrophotometric approach quantifies L* (luminosity, a* (quantity of green-red, and b* (quantity of blue-yellow of different DDE. Conclusions. SpectroShade evaluation of the optical properties of the enamel defect enhances clinical understanding of severity and extent of the defect and characterizes the enamel alteration in terms of color discrepancy and surface characterization.

  8. Defects and properties of cadmium oxide based transparent conductors

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Kin Man, E-mail: kinmanyu@cityu.edu.hk [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Detert, D. M.; Dubon, O. D. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Materials Science and Engineering, University of California, Berkeley, California 94720 (United States); Chen, Guibin [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Physics Department and Jiangsu Key Laboratory for Chemistry of Low Dimensional Materials, Huaiyin Normal University, Jiangsu 223300 (China); Zhu, Wei [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Department of Physics and The Center for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu, Chaoping [Department of Physics and Materials Science, City University of Hong Kong, Kowloon (Hong Kong); Grankowska, S. [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Institute of Experimental Physics (IEP UW), Warsaw University, Warsaw (Poland); Hsu, L. [Department of Postsecondary Teaching and Learning, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Walukiewicz, Wladek [Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    2016-05-14

    by a background acceptor concentration of ∼5–6 × 10{sup 20}/cm{sup 3}. The calculations offer an insight into understanding of the effects of defects on electrical properties of undoped and doped CdO and offer a potential to use similar methods to analyze doping and defect properties of other semiconductor materials.

  9. Defects and properties of cadmium oxide based transparent conductors

    International Nuclear Information System (INIS)

    Yu, Kin Man; Detert, D. M.; Dubon, O. D.; Chen, Guibin; Zhu, Wei; Liu, Chaoping; Grankowska, S.; Hsu, L.; Walukiewicz, Wladek

    2016-01-01

    ∼5–6 × 10 20 /cm 3 . The calculations offer an insight into understanding of the effects of defects on electrical properties of undoped and doped CdO and offer a potential to use similar methods to analyze doping and defect properties of other semiconductor materials.

  10. Helium bubbles aggravated defects production in self-irradiated copper

    Science.gov (United States)

    Wu, FengChao; Zhu, YinBo; Wu, Qiang; Li, XinZhu; Wang, Pei; Wu, HengAn

    2017-12-01

    Under the environment of high radiation, materials used in fission and fusion reactors will internally accumulate numerous lattice defects and bubbles. With extensive studies focused on bubble resolution under irradiation, the mutually effects between helium bubbles and displacement cascades in irradiated materials remain unaddressed. Therefore, the defects production and microstructure evolution under self-irradiation events in vicinity of helium bubbles are investigated by preforming large scale molecular dynamics simulations in single-crystal copper. When subjected to displacement cascades, distinguished bubble resolution categories dependent on bubble size are observed. With the existence of bubbles, radiation damage is aggravated with the increasing bubble size, represented as the promotion of point defects and dislocations. The atomic mechanisms of heterogeneous dislocation structures are attributed to different helium-vacancy cluster modes, transforming from the resolved gas trapped with vacancies to the biased absorption of vacancies by the over-pressured bubble. In both cases, helium impedes the recombination of point defects, leading to the accelerated formation of interstitial loops. The results and insight obtained here might contribute to understand the underlying mechanism of transmutant solute on the long-term evolution of irradiated materials.

  11. Magnetoencephalography signals are influenced by skull defects.

    Science.gov (United States)

    Lau, S; Flemming, L; Haueisen, J

    2014-08-01

    Magnetoencephalography (MEG) signals had previously been hypothesized to have negligible sensitivity to skull defects. The objective is to experimentally investigate the influence of conducting skull defects on MEG and EEG signals. A miniaturized electric dipole was implanted in vivo into rabbit brains. Simultaneous recording using 64-channel EEG and 16-channel MEG was conducted, first above the intact skull and then above a skull defect. Skull defects were filled with agar gels, which had been formulated to have tissue-like homogeneous conductivities. The dipole was moved beneath the skull defects, and measurements were taken at regularly spaced points. The EEG signal amplitude increased 2-10 times, whereas the MEG signal amplitude reduced by as much as 20%. The EEG signal amplitude deviated more when the source was under the edge of the defect, whereas the MEG signal amplitude deviated more when the source was central under the defect. The change in MEG field-map topography (relative difference measure, RDM(∗)=0.15) was geometrically related to the skull defect edge. MEG and EEG signals can be substantially affected by skull defects. MEG source modeling requires realistic volume conductor head models that incorporate skull defects. Copyright © 2013 International Federation of Clinical Neurophysiology. Published by Elsevier Ireland Ltd. All rights reserved.

  12. Dopants and defects in semiconductors

    CERN Document Server

    McCluskey, Matthew D

    2012-01-01

    "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … The book will be most useful for beginning graduate students in materials science. … an easy reading, broad introductory overview of the field …"-Materials Today, July-August 2012"… well written, with clear, lucid explanations …"-Chemistry World"The scientific development towards the method of controllable doping transformed the erratic and not reproducible family of semiconductor materials into the truly wonderful basis of modern microelectronics. This book tells the remarkable success story and I recommend it!"-Hans J. Queisser, Max-Planck-Institute, Stuttgart, Germany"McCluskey and Haller have written an outstanding modern guide to this field that will be useful to newcomers, and also to active researchers who want to broaden their horizons, as a means to learn the capabilities and limitations of the many techniques that are used in semiconductor-defect science."-Professor Michael J....

  13. Synchrotron X-ray CT characterization of titanium parts fabricated by additive manufacturing. Part II. Defects.

    Science.gov (United States)

    Scarlett, Nicola Vivienne Yorke; Tyson, Peter; Fraser, Darren; Mayo, Sheridan; Maksimenko, Anton

    2016-07-01

    Synchrotron X-ray tomography (SXRT) has been applied to the study of defects within three-dimensional printed titanium parts. These parts were made using the Arcam EBM(®) (electron beam melting) process which uses powdered titanium alloy, Ti64 (Ti alloy with approximately 6%Al and 4%V) as the feed and an electron beam for the sintering/welding. The experiment was conducted on the Imaging and Medical Beamline of the Australian Synchrotron. The samples represent a selection of complex shapes with a variety of internal morphologies. Inspection via SXRT has revealed a number of defects which may not otherwise have been seen. The location and nature of such defects combined with detailed knowledge of the process conditions can contribute to understanding the interplay between design and manufacturing strategy. This fundamental understanding may subsequently be incorporated into process modelling, prediction of properties and the development of robust methodologies for the production of defect-free parts.

  14. Failure prediction for Crack-in-Corrosion defects in natural gas transmission pipelines

    International Nuclear Information System (INIS)

    Bedairi, B.; Cronin, D.; Hosseini, A.; Plumtree, A.

    2012-01-01

    Cracks occurring coincidentally with corrosion (Crack-in-Corrosion or CIC), represent a new hybrid defect in pipelines that are not directly addressed in the current codes or assessment methods. To understand the failure response of these defects, the finite element method using an elastic–plastic fracture mechanics approach was applied to predict the failure pressures of comparable crack, corrosion and CIC defects in 508 mm diameter pipe with 5.7 mm wall thickness. Failure pressure predictions were made based on measured tensile, Charpy impact and J testing data, and validated using experimental rupture tests. Plastic collapse was predicted for corrosion and crack defects using the critical strength based on the material tensile strength, whereas fracture was predicted using the measured J 0.2 value. The model predictions were found to be conservative for the CIC defects (17.4% on average), 12.4% conservative for crack-only defects, and 3.2% conservative for corrosion defects compared to the experimental tests, demonstrating the applicability of the material-based failure criteria. For the defects considered in this study, all were predicted to fail by plastic collapse. The finite element method provided less conservative predictions than existing corrosion or crack-based analytical methods. Highlights: ► Cracks occurring coincidentally with corrosion represent a new hybrid defect in pipelines. ► Existing methods for prediction corrosion and crack defect failure pressures are conservative. ► The FE method can provide improved prediction of rupture pressure using actual material properties. ► Failure was predicted using FE with a critical stress for plastic collapse and J value for fracture. ► FE failure pressure predictions for crack in corrosion defects were 17% conservative on average.

  15. Analysis of CFRP Joints by Means of T-Pull Mechanical Test and Ultrasonic Defects Detection.

    Science.gov (United States)

    Casavola, Caterina; Palano, Fania; De Cillis, Francesco; Tati, Angelo; Terzi, Roberto; Luprano, Vincenza

    2018-04-18

    Defects detection within a composite component, with the aim of understanding and predicting its mechanical behavior, is of great importance in the aeronautical field because the irregularities of the composite material could compromise functionality. The aim of this paper is to detect defects by means of non-destructive testing (NDT) on T-pull samples made by carbon fiber reinforced polymers (CFRP) and to evaluate their effect on the mechanical response of the material. Samples, obtained from an industrial stringer having an inclined web and realized with a polymeric filler between cap and web, were subjected to ultrasonic monitoring and then to T-pull mechanical tests. All samples were tested with the same load mode and the same test configuration. An experimental set-up consisting of a semiautomatic C-scan ultrasonic mapping system with a phased array probe was designed and developed, optimizing control parameters and implementing image processing software. The present work is carried out on real composites parts that are characterized by having their intrinsic defectiveness, as opposed to the previous similar results in the literature mainly obtained on composite parts with artificially produced defects. In fact, although samples under study were realized free from defects, ultrasonic mapping found defectiveness inside the material. Moreover, the ultrasonic inspection could be useful in detecting both the location and size of defects. Experimental data were critically analyzed and qualitatively correlated with results of T-pull mechanical tests in order to better understand and explain mechanical behavior in terms of fracture mode.

  16. Effects of in-cascade defect clustering on near-term defect evolution

    Energy Technology Data Exchange (ETDEWEB)

    Heinisch, H.L. [Pacific Northwest National Lab., Richland, WA (United States)

    1997-08-01

    The effects of in-cascade defect clustering on the nature of the subsequent defect population are being studied using stochastic annealing simulations applied to cascades generated in molecular dynamics (MD) simulations. The results of the simulations illustrates the strong influence of the defect configuration existing in the primary damage state on subsequent defect evolution. The large differences in mobility and stability of vacancy and interstitial defects and the rapid one-dimensional diffusion of small, glissile interstitial loops produced directly in cascades have been shown to be significant factors affecting the evolution of the defect distribution. In recent work, the effects of initial cluster sizes appear to be extremely important.

  17. Introduction of artificial intelligence techniques for computerized management of defects in an industrial process

    International Nuclear Information System (INIS)

    Utzel, N.

    1991-06-01

    An optimized management of Tore Supra Tokamak requires a computerized defect management. The aim is the analysis of an inhibited situation not corrected by automatisms of the process and that can be handled only by human intervention. The operator should understand, make a diagnosis and act to restore the system. In this report are studied an expert system helping the operator to analyze defects of the two main cooling loops (decarbonated water and pressurized water), management of the history of malfunction and recording of diagnosises, elaboration of an adapted expert model and installation of a methodology for defect management in other processes of Tore Supra [fr

  18. Direct Observation of Radiation Defects: Experiment and Interpretation

    International Nuclear Information System (INIS)

    Dudarev, S.L.

    2012-01-01

    at low cost in comparison with the mock-up tests, offer scientific insight and make it possible to perform, in combination with experimental information derived from fission and ion-beam irradiation experiments, the preliminary assessment of power plant operating scenarios. Defining the limits of visibility of small defect clusters and dislocation loops, and optimal diffraction conditions for electron microscope imaging, remains one of the central problems of electron microscopy of irradiated materials. Using computer image simulations based on the propagation- interpolation algorithm for solving the Howie-Basinski equations, it is possible to investigate the relation between the actual and the 'observed' size of small loops, the part played by many-beam dynamical diffraction effects, and limitations of electron microscope imaging in identifying the structure of small defects. A particularly impressive and useful application of electron microscopy is given by recent in situ electron microscope observations, providing real-time visualization of dynamics of defects produced by ultra-high-energy electron irradiation, or showing microstructural evolution occurring under ion beam irradiation. Such observations have revolutionized our understanding of how properties of metals and alloys change in the extreme radiation and thermal environments of a fission or a fusion power plant. The key feature of in situ electron microscopy is its ability to exhibit the time-dependent dynamics of migration, interaction, and transformation of radiation defects, and to visualize the entire complexity of evolving defect and dislocation networks. For example, in situ electron microscope observations provided evidence of violation of the Burgers vector conservation law for dislocations on the nanoscale. This gave a vital clue needed for modeling microscopic processes responsible for the formation of unusual high temperature dislocation structures in iron, and for explaining the origin of the

  19. Positron annihilation spectroscopy in defects of semiconductors

    International Nuclear Information System (INIS)

    Fujinami, Masanori

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 18 cm -3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 15 cm -2 ) silicon and oxygen-implanted (180 keV, 2x10 15 cm -2 ) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V 6 O 2 at 600degC and V 10 O 6 at 800degC. (S.Y.)

  20. Perception of risk from automobile safety defects.

    Science.gov (United States)

    Slovic, P; MacGregor, D; Kraus, N N

    1987-10-01

    Descriptions of safety engineering defects of the kind that compel automobile manufacturers to initiate a recall campaign were evaluated by individuals on a set of risk characteristic scales that included overall vehicle riskiness, manufacturer's ability to anticipate the defect, importance for vehicle operation, severity of consequences and likelihood of compliance with a recall notice. A factor analysis of the risk characteristics indicated that judgments could be summarized in terms of two composite scales, one representing the uncontrollability of the damage the safety defect might cause and the other representing the foreseeability of the defect by the manufacturer. Motor vehicle defects were found to be highly diverse in terms of the perceived qualities of their risks. Location of individual defects within the factor space was closely associated with perceived riskiness, perceived likelihood of purchasing another car from the same manufacturer, perceived likelihood of compliance with a recall notice, and actual compliance rates.

  1. Automatic classification of defects in weld pipe

    International Nuclear Information System (INIS)

    Anuar Mikdad Muad; Mohd Ashhar Hj Khalid; Abdul Aziz Mohamad; Abu Bakar Mhd Ghazali; Abdul Razak Hamzah

    2000-01-01

    With the advancement of computer imaging technology, the image on hard radiographic film can be digitized and stored in a computer and the manual process of defect recognition and classification may be replace by the computer. In this paper a computerized method for automatic detection and classification of common defects in film radiography of weld pipe is described. The detection and classification processes consist of automatic selection of interest area on the image and then classify common defects using image processing and special algorithms. Analysis of the attributes of each defect such as area, size, shape and orientation are carried out by the feature analysis process. These attributes reveal the type of each defect. These methods of defect classification result in high success rate. Our experience showed that sharp film images produced better results

  2. Strained interface defects in silicon nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Benjamin G.; Stradins, Paul [National Center for Photovoltaics, National Renewable Energy Laboratory, Golden, CO (United States); Hiller, Daniel; Zacharias, Margit [IMTEK - Faculty of Engineering, Albert-Ludwigs-University Freiburg (Germany); Luo, Jun-Wei; Beard, Matthew C. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Semonin, Octavi E. [Chemical and Materials Science, National Renewable Energy Laboratory, Golden, CO (United States); Department of Physics, University of Colorado, Boulder, CO (United States)

    2012-08-07

    The surface of silicon nanocrystals embedded in an oxide matrix can contain numerous interface defects. These defects strongly affect the nanocrystals' photoluminescence efficiency and optical absorption. Dangling-bond defects are nearly eliminated by H{sub 2} passivation, thus decreasing absorption below the quantum-confined bandgap and enhancing PL efficiency by an order of magnitude. However, there remain numerous other defects seen in absorption by photothermal deflection spectroscopy; these defects cause non-radiative recombination that limits the PL efficiency to <15%. Using atomistic pseudopotential simulations, we attribute these defects to two specific types of distorted bonds: Si-Si and bridging Si-O-Si bonds between two Si atoms at the nanocrystal surface. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Altering graphene line defect properties using chemistry

    Science.gov (United States)

    Vasudevan, Smitha; White, Carter; Gunlycke, Daniel

    2012-02-01

    First-principles calculations are presented of a fundamental topological line defect in graphene that was observed and reported in Nature Nanotech. 5, 326 (2010). These calculations show that atoms and smaller molecules can bind covalently to the surface in the vicinity of the graphene line defect. It is also shown that the chemistry at the line defect has a strong effect on its electronic and magnetic properties, e.g. the ferromagnetically aligned moments along the line defect can be quenched by some adsorbates. The strong effect of the adsorbates on the line defect properties can be understood by examining how these adsorbates affect the boundary-localized states in the vicinity of the Fermi level. We also expect that the line defect chemistry will significantly affect the scattering properties of incident low-energy particles approaching it from graphene.

  4. Primordial inhomogeneities from massive defects during inflation

    Energy Technology Data Exchange (ETDEWEB)

    Firouzjahi, Hassan; Karami, Asieh; Rostami, Tahereh, E-mail: firouz@ipm.ir, E-mail: karami@ipm.ir, E-mail: t.rostami@ipm.ir [School of Astronomy, Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran (Iran, Islamic Republic of)

    2016-10-01

    We consider the imprints of local massive defects, such as a black hole or a massive monopole, during inflation. The massive defect breaks the background homogeneity. We consider the limit that the physical Schwarzschild radius of the defect is much smaller than the inflationary Hubble radius so a perturbative analysis is allowed. The inhomogeneities induced in scalar and gravitational wave power spectrum are calculated. We obtain the amplitudes of dipole, quadrupole and octupole anisotropies in curvature perturbation power spectrum and identify the relative configuration of the defect to CMB sphere in which large observable dipole asymmetry can be generated. We observe a curious reflection symmetry in which the configuration where the defect is inside the CMB comoving sphere has the same inhomogeneous variance as its mirror configuration where the defect is outside the CMB sphere.

  5. Automatic classification of defects in weld pipe

    International Nuclear Information System (INIS)

    Anuar Mikdad Muad; Mohd Ashhar Khalid; Abdul Aziz Mohamad; Abu Bakar Mhd Ghazali; Abdul Razak Hamzah

    2001-01-01

    With the advancement of computer imaging technology, the image on hard radiographic film can be digitized and stored in a computer and the manual process of defect recognition and classification may be replaced by the computer. In this paper, a computerized method for automatic detection and classification of common defects in film radiography of weld pipe is described. The detection and classification processes consist of automatic selection of interest area on the image and then classify common defects using image processing and special algorithms. Analysis of the attributes of each defect such area, size, shape and orientation are carried out by the feature analysis process. These attributes reveal the type of each defect. These methods of defect classification result in high success rate. Our experience showed that sharp film images produced better results. (Author)

  6. Little string origin of surface defects

    Energy Technology Data Exchange (ETDEWEB)

    Haouzi, Nathan; Schmid, Christian [Center for Theoretical Physics, University of California, Berkeley,LeConte Hall, Berkeley (United States)

    2017-05-16

    We derive a large class of codimension-two defects of 4d N=4 Super Yang-Mills (SYM) theory from the (2,0) little string. The origin of the little string is type IIB theory compactified on an ADE singularity. The defects are D-branes wrapping the 2-cycles of the singularity. We use this construction to make contact with the description of SYM defects due to Gukov and Witten https://arxiv.org/abs/hep-th/0612073. Furthermore, we provide a geometric perspective on the nilpotent orbit classification of codimension-two defects, and the connection to ADE-type Toda CFT. The only data needed to specify the defects is a set of weights of the algebra obeying certain constraints, which we give explicitly. We highlight the differences between the defect classification in the little string theory and its (2,0) CFT limit.

  7. Agricultural Compounds in Water and Birth Defects.

    Science.gov (United States)

    Brender, Jean D; Weyer, Peter J

    2016-06-01

    Agricultural compounds have been detected in drinking water, some of which are teratogens in animal models. The most commonly detected agricultural compounds in drinking water include nitrate, atrazine, and desethylatrazine. Arsenic can also be an agricultural contaminant, although arsenic often originates from geologic sources. Nitrate has been the most studied agricultural compound in relation to prenatal exposure and birth defects. In several case-control studies published since 2000, women giving birth to babies with neural tube defects, oral clefts, and limb deficiencies were more likely than control mothers to be exposed to higher concentrations of drinking water nitrate during pregnancy. Higher concentrations of atrazine in drinking water have been associated with abdominal defects, gastroschisis, and other defects. Elevated arsenic in drinking water has also been associated with birth defects. Since these compounds often occur as mixtures, it is suggested that future research focus on the impact of mixtures, such as nitrate and atrazine, on birth defects.

  8. Mouse Models for Investigating the Developmental Bases of Human Birth Defects

    OpenAIRE

    MOON, ANNE M.

    2006-01-01

    Clinicians and basic scientists share an interest in discovering how genetic or environmental factors interact to perturb normal development and cause birth defects and human disease. Given the complexity of such interactions, it is not surprising that 4% of human infants are born with a congenital malformation, and cardiovascular defects occur in nearly 1%. Our research is based on the fundamental hypothesis that an understanding of normal and abnormal development will permit us to generate ...

  9. Coherent defects in superconducting circuits

    International Nuclear Information System (INIS)

    Mueller, Clemens

    2011-01-01

    The interaction of superconducting circuits with additional quantum systems is a topic that has found extensive study in the recent past. In the limit where the added system are incoherent, this is the standard field of decoherence and the system dynamics can be described by a simple master equation. In the other limit however, when the additional parts are coherent, the resulting time-evolution can become more complicated. In this thesis we have investigated the interaction of superconducting circuits with coherent and incoherent two-level defects. We have shown theoretical calculations characterizing this interaction for all relevant parameter regimes. In the weak coupling limit, the interaction can be described in an effective bath picture, where the TLS act as parts of a large, decohering environment. For strong coupling, however, the coherent dynamics of the full coupled system has to be considered. We show the calculations of the coupled time-evolution and again characterize the interaction by an effective decoherence rate. We also used experimental data to characterize the microscopic origin of the defects and the details of their interaction with the circuits. The results obtained by analyzing spectroscopic data allow us to place strong constraint on several microscopic models for the observed TLS. However, these calculations are not yet fully conclusive as to the physical nature of the TLS. We propose additional experiments to fully characterize the interaction part of the Hamiltonian, thus providing the answer to the question of the physical origin of the coupling. Additionally we have developed a method to directly drive individual defect states via virtual excitation of the qubit. This method allows one to directly probe the properties of single TLS and possibly make use of their superior coherence times for quantum information purposes. The last part of this thesis provided a way for a possible implementation of geometric quantum computation in

  10. Effects of mass defect in atomic clocks

    Science.gov (United States)

    Taichenachev, A. V.; Yudin, V. I.

    2018-01-01

    We consider some implications of the mass defect on the frequency of atomic transitions. We have found that some well-known frequency shifts (such as gravitational and quadratic Doppler shifts) can be interpreted as consequences of the mass defect, i.e., without the need for the concept of time dilation used in special and general relativity theories. Moreover, we show that the inclusion of the mass defect leads to previously unknown shifts for clocks based on trapped ions..

  11. Phosphorous–vacancy–oxygen defects in silicon

    KAUST Repository

    Wang, Hao

    2013-07-30

    Electronic structure calculations employing the hybrid functional approach are used to gain fundamental insight in the interaction of phosphorous with oxygen interstitials and vacancies in silicon. It recently has been proposed, based on a binding energy analysis, that phosphorous–vacancy–oxygen defects may form. In the present study we investigate the stability of this defect as a function of the Fermi energy for the possible charge states. Spin polarization is found to be essential for the charge neutral defect.

  12. Research In Diagnosing Bearing Defects From Vibrations

    Science.gov (United States)

    Zoladz, T.; Earhart, E.; Fiorucci, T.

    1995-01-01

    Report describes research in bearing-defect signature analysis - use of vibration-signal analysis to diagnose defects in roller and ball bearings. Experiments performed on bearings in good condition and other bearings in which various parts scratched to provide known defects correlated with vibration signals. Experiments performed on highly instrumented motor-driven rotor assembly at speeds up to 10,050 r/min, using accelerometers, velocity probes, and proximity sensors mounted at various locations on assembly to measure vibrations.

  13. Thermophysical spectroscopy of defect states in silicon

    International Nuclear Information System (INIS)

    Igamberdyev, Kh.T.; Mamadalimov, A.T.; Khabibullaev, P.K.

    1989-01-01

    The present work deals with analyzing the possibilities of using the non-traditional thermophysical methods to study a defect structure in silicon. For this purpose, the temperature dependences of thermophysical properties of defect silicon are investigated. A number of new, earlier unknown physical phenomena in silicon are obtained, and their interpretation has enabled one to establish the main physical mechanisms of formation of deep defect states in silicon

  14. Point defects in GaAs and other semiconductors

    International Nuclear Information System (INIS)

    Ehrhart, P.; Karsten, K.; Pillukat, A.

    1993-01-01

    In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

  15. Renyi entropy and conformal defects

    Energy Technology Data Exchange (ETDEWEB)

    Bianchi, Lorenzo [Humboldt-Univ. Berlin (Germany). Inst. fuer Physik; Hamburg Univ. (Germany). II. Inst. fuer Theoretische Physik; Meineri, Marco [Scuola Normale Superiore, Pisa (Italy); Perimeter Institute for Theoretical Physics, Waterloo, ON (Canada); Istituto Nazionale di Fisica Nucleare, Pisa (Italy); Myers, Robert C. [Perimeter Institute for Theoretical Physics, Waterloo, ON (Canada); Smolkin, Michael [California Univ., Berkely, CA (United States). Center for Theoretical Physics and Department of Physics

    2016-04-18

    We propose a field theoretic framework for calculating the dependence of Renyi entropies on the shape of the entangling surface in a conformal field theory. Our approach rests on regarding the corresponding twist operator as a conformal defect and in particular, we define the displacement operator which implements small local deformations of the entangling surface. We identify a simple constraint between the coefficient defining the two-point function of the displacement operator and the conformal weight of the twist operator, which consolidates a number of distinct conjectures on the shape dependence of the Renyi entropy. As an example, using this approach, we examine a conjecture regarding the universal coefficient associated with a conical singularity in the entangling surface for CFTs in any number of spacetime dimensions. We also provide a general formula for the second order variation of the Renyi entropy arising from small deformations of a spherical entangling surface, extending Mezei's results for the entanglement entropy.

  16. Universe as a topological defect

    International Nuclear Information System (INIS)

    Anabalon, Andres; Willison, Steven; Zanelli, Jorge

    2008-01-01

    Four-dimensional Einstein's general relativity is shown to arise from a gauge theory for the conformal group, SO(4,2). The theory is constructed from a topological dimensional reduction of the six-dimensional Euler density integrated over a manifold with a four-dimensional topological defect. The resulting action is a four-dimensional theory defined by a gauged Wess-Zumino-Witten term. An ansatz is found which reduces the full set of field equations to those of Einstein's general relativity. When the same ansatz is replaced in the action, the gauged WZW term reduces to the Einstein-Hilbert action. Furthermore, the unique coupling constant in the action can be shown to take integer values if the fields are allowed to be analytically continued to complex values

  17. Neural Tube Defects and Pregnancy

    Directory of Open Access Journals (Sweden)

    Emine Çoşar

    2009-09-01

    Full Text Available OBJECTIVE: Neural tube defects are congenital malformations those mostly causing life-long morbidities. They are prevented by the periconseptional folic acid usage and prenatal diagnostic methods. MATERIALS-METHODS: Pregnants from Afyonkarahisar and neighbourhood cities applied to our hospital and determined NTD, were investigated. RESULTS: In our obstetrics clinic 1403 delivery were made and 43 of them had fetus with NTD. Among these fetuses 41.3% had meningomyelocel, 17.4% had meningocel, 21.7% had encephalocel, 8.7% had unencephali and 4.3% had iniencephali. CONCLUSION: Incidence of NTD is high in our region and geographic region, nutrition and other socioeconomic factors may be related to the high incidence. Education of the mother and periconceptional folic acid usage may reduce teh incidence of NTD.

  18. Renyi entropy and conformal defects

    International Nuclear Information System (INIS)

    Bianchi, Lorenzo; Myers, Robert C.; Smolkin, Michael

    2016-01-01

    We propose a field theoretic framework for calculating the dependence of Renyi entropies on the shape of the entangling surface in a conformal field theory. Our approach rests on regarding the corresponding twist operator as a conformal defect and in particular, we define the displacement operator which implements small local deformations of the entangling surface. We identify a simple constraint between the coefficient defining the two-point function of the displacement operator and the conformal weight of the twist operator, which consolidates a number of distinct conjectures on the shape dependence of the Renyi entropy. As an example, using this approach, we examine a conjecture regarding the universal coefficient associated with a conical singularity in the entangling surface for CFTs in any number of spacetime dimensions. We also provide a general formula for the second order variation of the Renyi entropy arising from small deformations of a spherical entangling surface, extending Mezei's results for the entanglement entropy.

  19. Precise design-based defect characterization and root cause analysis

    Science.gov (United States)

    Xie, Qian; Venkatachalam, Panneerselvam; Lee, Julie; Chen, Zhijin; Zafar, Khurram

    2017-03-01

    that human operators will typically miss), to obtain the exact defect location on design, to compare all defective patterns thus detected against a library of known patterns, and to classify all defective patterns as either new or known. By applying the computer to these tasks, we automate the entire process from defective pattern identification to pattern classification with high precision, and we perform this operation en masse during R & D, ramp, and volume production. By adopting the methodology, whenever a specific weak pattern is identified, we are able to run a series of characterization operations to ultimately arrive at the root cause. These characterization operations can include (a) searching all pre-existing Review SEM images for the presence of the specific weak pattern to determine whether there is any spatial (within die or within wafer) or temporal (within any particular date range, before or after a mask revision, etc.) correlation and (b) understanding the failure rate of the specific weak pattern to prioritize the urgency of the problem, (c) comparing the weak pattern against an OPC (Optical Procimity Correction) Verification report or a PWQ (Process Window Qualification)/FEM (Focus Exposure Matrix) result to assess the likelihood of it being a litho-sensitive pattern, etc. After resolving the specific weak pattern, we will categorize it as known pattern, and the engineer will move forward with discovering new weak patterns.

  20. Influence of neutrophil defects on Burkholderia cepacia complex pathogenesis

    Directory of Open Access Journals (Sweden)

    Laura A. Porter

    2011-11-01

    Full Text Available The Burkholderia cepacia complex (Bcc is a group of Gram-negative bacteria that are ubiquitous in the environment and have emerged as opportunistic pathogens in immunocompromised patients. The primary patient populations infected with Bcc include individuals with cystic fibrosis (CF, as well as those with chronic granulomatous disease (CGD. While Bcc infection in CF is better characterized than in CGD, these two genetic diseases are not obviously similar and it is currently unknown if there is any commonality in host immune defects that is responsible for the susceptibility to Bcc. CF is caused by mutations in the CF transmembrane conductance regulator, resulting in manifestations in various organ systems, however the major cause of morbidity and mortality is currently due to bacterial respiratory infections. CGD, on the other hand, is a genetic disorder that is caused by defects in phagocyte NADPH oxidase. Because of the defect in CGD, phagocytes in these patients are unable to produce reactive oxygen species, which results in increased susceptibility to bacterial and fungal infections. Despite this significant defect in microbial clearance, the spectrum of pathogens frequently implicated in infections in CGD is relatively narrow and includes some bacterial species that are considered almost pathognomonic for this disorder. Very little is known about the cause of the specific susceptibility to Bcc over other potential pathogens more prevalent in the environment, and a better understanding of specific mechanisms required for bacterial virulence has become a high priority. This review will summarize both the current knowledge and future directions related to Bcc virulence in immunocompromised individuals with a focus on the roles of bacterial factors and neutrophil defects in pathogenesis.

  1. Paternal occupation and birth defects: findings from the National Birth Defects Prevention Study.

    NARCIS (Netherlands)

    Desrosiers, T.A.; Herring, A.H.; Shapira, S.K.; Hooiveld, M.; Luben, T.J.; Herdt-Losavio, M.L.; Lin, S.; Olshan, A.F.

    2012-01-01

    Objectives: Several epidemiological studies have suggested that certain paternal occupations may be associated with an increased prevalence of birth defects in offspring. Using data from the National Birth Defects Prevention Study, the authors investigated the association between paternal occupation

  2. Defining defect specifications to optimize photomask production and requalification

    Science.gov (United States)

    Fiekowsky, Peter

    2006-10-01

    Reducing defect repairs and accelerating defect analysis is becoming more important as the total cost of defect repairs on advanced masks increases. Photomask defect specs based on printability, as measured on AIMS microscopes has been used for years, but the fundamental defect spec is still the defect size, as measured on the photomask, requiring the repair of many unprintable defects. ADAS, the Automated Defect Analysis System from AVI is now available in most advanced mask shops. It makes the use of pure printability specs, or "Optimal Defect Specs" practical. This software uses advanced algorithms to eliminate false defects caused by approximations in the inspection algorithm, classify each defect, simulate each defect and disposition each defect based on its printability and location. This paper defines "optimal defect specs", explains why they are now practical and economic, gives a method of determining them and provides accuracy data.

  3. Effect of irradiation-induced defects on fusion reactor ceramics

    International Nuclear Information System (INIS)

    Clinard, F.W. Jr.

    1986-01-01

    Structural, thermal, and electrical properties critical to performance of ceramics in a fusion environment can be profoundly altered by irradiation effects. Neutron damage may cause swelling, reduction of thermal conductivity, increase in dielectric loss, and either reduction or enhancement of strength depending on the crystal structure and defect content of the material. Absorption of ionizing energy inevitably leads to degradation of insulating properties, but these changes can be reduced by alterations in structural or compositional makeup. Assessment of the irradiation response of candidate ceramics Al 2 O 3 , MgAl 2 O 4 , SiC and Si 3 N 4 shows that each may find use in advanced fusion devices. The present understanding of irradiation-induced defects in ceramics, while far from complete, nevertheless points the way to methods for developing improved materials for fusion applications

  4. Modeling the relationships among internal defect features and external Appalachian hardwood log defect indicators

    Science.gov (United States)

    R. Edward. Thomas

    2009-01-01

    As a hardwood tree grows and develops, surface defects such as branch stubs and wounds are overgrown. Evidence of these defects remain on the log surface for decades and in many instances for the life of the tree. As the tree grows the defect is encapsulated or grown over by new wood. During this process the appearance of the defect in the tree's bark changes. The...

  5. Understanding the Irradiation Behavior of Zirconium Carbide

    International Nuclear Information System (INIS)

    Motta, Arthur; Sridharan, Kumar; Morgan, Dane; Szlufarska, Izabela

    2013-01-01

    Zirconium carbide (ZrC) is being considered for utilization in high-temperature gas-cooled reactor fuels in deep-burn TRISO fuel. Zirconium carbide possesses a cubic B1-type crystal structure with a high melting point, exceptional hardness, and good thermal and electrical conductivities. The use of ZrC as part of the TRISO fuel requires a thorough understanding of its irradiation response. However, the radiation effects on ZrC are still poorly understood. The majority of the existing research is focused on the radiation damage phenomena at higher temperatures (>450ee)C) where many fundamental aspects of defect production and kinetics cannot be easily distinguished. Little is known about basic defect formation, clustering, and evolution of ZrC under irradiation, although some atomistic simulation and phenomenological studies have been performed. Such detailed information is needed to construct a model describing the microstructural evolution in fast-neutron irradiated materials that will be of great technological importance for the development of ZrC-based fuel. The goal of the proposed project is to gain fundamental understanding of the radiation-induced defect formation in zirconium carbide and irradiation response by using a combination of state-of-the-art experimental methods and atomistic modeling. This project will combine (1) in situ ion irradiation at a specialized facility at a national laboratory, (2) controlled temperature proton irradiation on bulk samples, and (3) atomistic modeling to gain a fundamental understanding of defect formation in ZrC. The proposed project will cover the irradiation temperatures from cryogenic temperature to as high as 800ee)C, and dose ranges from 0.1 to 100 dpa. The examination of this wide range of temperatures and doses allows us to obtain an experimental data set that can be effectively used to exercise and benchmark the computer calculations of defect properties. Combining the examination of radiation

  6. Failures and Defects in the Building Process

    DEFF Research Database (Denmark)

    Jørgensen, Kirsten

    2009-01-01

    Function failures, defects, mistakes and poor communication are major problems for the construction sector. As the empirical element in the research, a large construction site was observed from the very start to the very end and all failures and defects of a certain size were recorded and analysed...

  7. Treatment of osteochondral defects of the talus

    NARCIS (Netherlands)

    van Bergen, C. J. A.; de Leeuw, P. A. J.; van Dijk, C. N.

    2008-01-01

    This review article provides a current concepts overview of osteochondral defects of the talus, with special emphasis on treatment options, their indications and future developments. Osteochondral defects of the talar dome are mostly caused by a traumatic event. They may lead to deep ankle pain on

  8. Indicators for Building Process without Final Defects -

    DEFF Research Database (Denmark)

    Jørgensen, Kirsten; Rasmussen, Grane Mikael Gregaard; Thuesen, Christian Langhoff

    2011-01-01

    This article introduces the preliminary data analysis, as well as the underlying theories and methods for identifying the indicators for building process without final defects. Since 2004, the Benchmark Centre for the Danish Construction Sector (BEC) has collected information about legal defects...

  9. Positron analysis of defects in metals

    NARCIS (Netherlands)

    van Veen, A.; Kruseman, A.C.; Schut, H.; Mijnarends, P.E.; Kooi, B.J.; de Hosson, J.T.M.; Jean, YC; Eldrup, M; Schrader, DM; West, RN

    1997-01-01

    New methods are discussed to improve defect analysis. The first method employs mapping of two shape parameters, S and W, of the positron annihilation photopeak. It is demonstrated that the combined use of S and W allows to a better discrimination of defects. The other method is based on background

  10. Defect structure of electrodeposited chromium layers

    International Nuclear Information System (INIS)

    Marek, T.; Suevegh, K.; Vertes, A.; El-Sharif, M.; McDougall, J.; Chisolm, C.U.

    2000-01-01

    Positron annihilation spectroscopy was applied to study the effects of pre-treatment and composition of substrates on the quality and defect structure of electrodeposited thick chromium coatings. The results show that both parameters are important, and a scenario is proposed why the mechanically polished substrate gives more defective film than the electro polished one.

  11. Defect structure of electrodeposited chromium layers

    Energy Technology Data Exchange (ETDEWEB)

    Marek, T. E-mail: marek@para.chem.elte.hu; Suevegh, K.; Vertes, A.; El-Sharif, M.; McDougall, J.; Chisolm, C.U

    2000-06-01

    Positron annihilation spectroscopy was applied to study the effects of pre-treatment and composition of substrates on the quality and defect structure of electrodeposited thick chromium coatings. The results show that both parameters are important, and a scenario is proposed why the mechanically polished substrate gives more defective film than the electro polished one.

  12. Birth defects in children with newborn encephalopathy

    NARCIS (Netherlands)

    Felix, JF; Badawi, N; Kurinczuk, JJ; Bower, C; Keogh, JM; Pemberton, PJ

    2000-01-01

    This study was designed to investigate birth defects found in association with newborn encephalopathy. All possible birth defects were ascertained in a population-based study of 276 term infants with moderate or severe encephalopathy and 564 unmatched term control infants. A strong association

  13. Iodide-trapping defect of the thyroid

    International Nuclear Information System (INIS)

    Pannall, P.R.; Steyn, A.F.; Van Reenen, O.

    1978-01-01

    We describe a grossly hypothyroid 50-year-old woman, mentally retarded since birth. On the basis of her history of recurrent goitre, absence of 131 I neck uptake and a low saliva/plasma 131 I ratio, congenital hypothyroidism due to a defect of the iodide-trapping mechanism was diagnosed. Other family members studied did not have the defect

  14. Defect-Tolerant Monolayer Transition Metal Dichalcogenides

    DEFF Research Database (Denmark)

    Pandey, Mohnish; Rasmussen, Filip Anselm; Kuhar, Korina

    2016-01-01

    Localized electronic states formed inside the band gap of a semiconductor due to crystal defects can be detrimental to the material's optoelectronic properties. Semiconductors with a lower tendency to form defect induced deep gap states are termed defect-tolerant. Here we provide a systematic first...... the gap. These ideas are made quantitative by introducing a descriptor that measures the degree of similarity of the conduction and valence band manifolds. Finally, the study is generalized to nonpolar nanoribbons of the TMDs where we find that only the defect sensitive materials form edge states within......-principles investigation of defect tolerance in 29 monolayer transition metal dichalcogenides (TMDs) of interest for nanoscale optoelectronics. We find that the TMDs based on group VI and X metals form deep gap states upon creation of a chalcogen (S, Se, Te) vacancy, while the TMDs based on group IV metals form only...

  15. Defective Reduction in Frozen Pie Manufacturing Process

    Science.gov (United States)

    Nooted, Oranuch; Tangjitsitcharoen, Somkiat

    2017-06-01

    The frozen pie production has a lot of defects resulting in high production cost. Failure mode and effect analysis (FMEA) technique has been applied to improve the frozen pie process. Pareto chart is also used to determine the major defects of frozen pie. There are 3 main processes that cause the defects which are the 1st freezing to glazing process, the forming process, and the folding process. The Risk Priority Number (RPN) obtained from FMEA is analyzed to reduce the defects. If RPN of each cause exceeds 45, the process will be considered to be improved and selected for the corrective and preventive actions. The results showed that RPN values decreased after the correction. Therefore, the implementation of FMEA technique can help to improve the performance of frozen pie process and reduce the defects approximately 51.9%.

  16. Defect accumulation under cascade damage conditions

    DEFF Research Database (Denmark)

    Trinkaus, H.; Singh, B.N.; Woo, C.H.

    1994-01-01

    in terms of this reaction kinetics taking into account cluster production, dissociation, migration and annihilation at extended sinks. Microstructural features which are characteristic of cascade damage and cannot be explained in terms of the conventional single defect reaction kinetics are emphasized......There is now ample evidence from both experimental and computer simulation studies that in displacement cascades not only intense recombination takes place but also efficient clustering of both self-interstitial atoms (SIAs) and vacancies. The size distributions of the two types of defects produced...... reactions kinetics associated with the specific features of cascade damage is described, with emphasis on asymmetries between SIA and vacancy type defects concerning their production, stability, mobility and interactions with other defects. Defect accumulation under cascade damage conditions is discussed...

  17. Defect pin behaviour in the DFR

    International Nuclear Information System (INIS)

    Sloss, W.M.; Bagley, K.Q.; Edmonds, E.; Potter, P.E.

    1979-01-01

    A program of defective fuel pin irradiations has been carried out in the DFR. This program employed fuel pins which had failed during previous irradiations (natural defects) and pins in which simulated failures (artificial defects) had been induced prior to irradiation or during an intermediate examination stage at moderate or substantial burnups. The artificial defects simulated longitudinal ruptures and were normally located at positions near the top, middle and bottom of the pin where clad temperatures were 450, 540 and 630 0 C respectively. The fuel was mixed U-Pu oxide, and fuel form, stoichiometry, clad type, pin diameter, linear rating, and burnup were among the variables examined. The defect pin tests were normally carried out in single pin or trefoil type vehicles. After irradiation all the pins were subjected to the normal nondestructive examination procedures and the visual, radiographic, gamma-scanning, and dimensional change results are presented. Several pins were destructively examined and the metallographic data are discussed

  18. Tritium releases, birth defects and infant deaths

    International Nuclear Information System (INIS)

    1991-01-01

    The AECB has published a report 'Tritium releases from the Pickering Nuclear Generating Station and Birth Defects and Infant Mortality in Nearby Communities 1971-1988' (report number INFO-0401). This presents the results of a detailed analysis of deaths and birth defects occurring in infants born to mothers living in the area (25 Km radius) of the Pickering nuclear power plant, over an 18-year period. The analysis looked at the frequency of these defects and deaths in comparison to the general rate for Ontario, and also in relation to airborne and waterborne releases of tritium from the power plant. The overall conclusion was that the rates of infant death and birth defects were generally not higher in the study population than in all of Ontario. There was no prevalent relationship between these deaths and defects and tritium releases measured either at the power plant or by ground monitoring stations t some distance from the facility

  19. Wafer plane inspection for advanced reticle defects

    Science.gov (United States)

    Nagpal, Rajesh; Ghadiali, Firoz; Kim, Jun; Huang, Tracy; Pang, Song

    2008-05-01

    Readiness of new mask defect inspection technology is one of the key enablers for insertion & transition of the next generation technology from development into production. High volume production in mask shops and wafer fabs demands a reticle inspection system with superior sensitivity complemented by a low false defect rate to ensure fast turnaround of reticle repair and defect disposition (W. Chou et al 2007). Wafer Plane Inspection (WPI) is a novel approach to mask defect inspection, complementing the high resolution inspection capabilities of the TeraScanHR defect inspection system. WPI is accomplished by using the high resolution mask images to construct a physical mask model (D. Pettibone et al 1999). This mask model is then used to create the mask image in the wafer aerial plane. A threshold model is applied to enhance the inspectability of printing defects. WPI can eliminate the mask restrictions imposed on OPC solutions by inspection tool limitations in the past. Historically, minimum image restrictions were required to avoid nuisance inspection stops and/or subsequent loss of sensitivity to defects. WPI has the potential to eliminate these limitations by moving the mask defect inspections to the wafer plane. This paper outlines Wafer Plane Inspection technology, and explores the application of this technology to advanced reticle inspection. A total of twelve representative critical layers were inspected using WPI die-to-die mode. The results from scanning these advanced reticles have shown that applying WPI with a pixel size of 90nm (WPI P90) captures all the defects of interest (DOI) with low false defect detection rates. In validating CD predictions, the delta CDs from WPI are compared against Aerial Imaging Measurement System (AIMS), where a good correlation is established between WPI and AIMSTM.

  20. A proposed defect tracking model for classifying the inserted defect reports to enhance software quality control.

    Science.gov (United States)

    Sultan, Torky; Khedr, Ayman E; Sayed, Mostafa

    2013-01-01

    NONE DECLARED Defect tracking systems play an important role in the software development organizations as they can store historical information about defects. There are many research in defect tracking models and systems to enhance their capabilities to be more specifically tracking, and were adopted with new technology. Furthermore, there are different studies in classifying bugs in a step by step method to have clear perception and applicable method in detecting such bugs. This paper shows a new proposed defect tracking model for the purpose of classifying the inserted defects reports in a step by step method for more enhancement of the software quality.

  1. How to 'visualize' lattice defects

    International Nuclear Information System (INIS)

    Doi, Kenji

    1974-01-01

    Methods to recognize objects are discussed. In case of optics, lenses are used, and light from objects passing through the lenses focuses on focal planes. The amplitude of light on the focal planes in given as a function of the structure factor of scattering light from objects, images of objects are made on image planes. In case of X-ray or neutron diffraction, lenses which make images by X-ray or neutrons can not be made, accordingly images cannot be obtained. Images can be seen with electron microscopes. By X-ray or thermal neutron diffraction, intensity on focal planes in observed, and the defects to be studied are recognized as diffuse scattering. Since it is necessary to minimize aberration in case of image observation with electron microscopes, slits are used to utilize electron beam near optical axis exclusively. Therefore large resolving power cannot be expected. The information concerning structure obtained from focal planes is of statistical nature, and that from image planes is local information. The principle of neutron topography, by which the informations concerning local points are obtained, is explained. A photograph of LiF irradiated by 0.5 MeV proton beam was taken by the topographic method, and shown in this paper. (Kato, T.)

  2. Characterization of the structure and chemistry of defects in materials

    International Nuclear Information System (INIS)

    Larson, B.C.; Ruehle, M.; Seidman, D.N.

    1988-01-01

    Research programs, presented at the materials research symposium, on defects in materials are presented. Major areas include: point defects, defect aggregates, and ordering; defects in non-metals and semiconductors; atomic resolution imaging of defects; and gain boundaries, interfaces, and layered materials. Individual projects are processed separately for the data bases

  3. Distribution of defects in wind turbine blades and reliability assessment of blades containing defects

    DEFF Research Database (Denmark)

    Stensgaard Toft, Henrik; Branner, Kim; Berring, Peter

    2009-01-01

    on the assumption that one error in the production process tends to trigger several defects. For both models additional information about number, type and size of the defects is included as stochastic variables. The probability of failure for a wind turbine blade will not only depend on variations in the material......In the present paper two stochastic models for the distribution of defects in wind turbine blades are proposed. The first model assumes that the individual defects are completely randomly distributed in the blade. The second model assumes that the defects occur in clusters of different size based...... properties and the load but also on potential defects in the blades. As a numerical example the probability of failure is calculated for the main spar both with and without defects in terms of delaminations. The delaminations increase the probability of failure compared to a perfect blade, but by applying...

  4. Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

    International Nuclear Information System (INIS)

    Camillo-Castillo, R.A.; Law, M.E.; Jones, K.S.

    2004-01-01

    As the industry continues to aggressively scale CMOS technology, the shift to lower energy ion implantation becomes essential. The consequent shallower amorphous layers result in dopant profiles that are in closer proximity to the end of range (EOR) damage and therefore a better understanding of the interaction between the dopant atoms and the EOR is required. A study is conducted on the influence of dopant profiles on the behavior of the EOR defects. Czochralski-grown silicon wafers are preamorphized with 1 x 10 15 cm -2 , 10 keV Ge + ions and subsequently implanted with 1 x 10 15 cm -2 , 1 keV B + ions. A sequence of rapid thermal and furnace anneals are performed at 750 deg. C under a nitrogen ambient for periods of 1 s up to 6 h. Plan view transmission electron microscopy (PTEM) reveals a significant difference in the defect evolution for samples with and without boron, suggesting that the boron influences the evolution of the EOR defects. The extended defects observed for samples which contain boron appear as dot-like defects which are unstable and dissolve after very short anneal times. The defect evolution however, in samples without boron follows an Oswald ripening behavior and form {3 1 1}-type defects and dislocation loops. Hall effect measurements denote a high initial activation and subsequent deactivation of the dopant atoms which is characteristic of the formation of boron interstitial clusters. Diffusion analyses via secondary ion mass spectroscopy (SIMS) support this theory

  5. The electronic transport properties of defected bilayer sliding armchair graphene nanoribbons

    Science.gov (United States)

    Mohammadi, Amin; Haji-Nasiri, Saeed

    2018-04-01

    By applying non-equilibrium Green's functions (NEGF) in combination with tight-binding (TB) model, we investigate and compare the electronic transport properties of perfect and defected bilayer armchair graphene nanoribbons (BAGNRs) under finite bias. Two typical defects which are placed in the middle of top layer (i.e. single vacancy (SV) and stone wale (SW) defects) are examined. The results reveal that in both perfect and defected bilayers, the maximum current refers to β-AB, AA and α-AB stacking orders, respectively, since the intermolecular interactions are stronger in them. Moreover it is observed that a SV decreases the current in all stacking orders, but the effects of a SW defect is nearly unpredictable. Besides, we introduced a sequential switching behavior and the effects of defects on the switching performance is studied as well. We found that a SW defect can significantly improve the switching behavior of a bilayer system. Transmission spectrum, band structure, molecular energy spectrum and molecular projected self-consistent Hamiltonian (MPSH) are analyzed subsequently to understand the electronic transport properties of these bilayer devices which can be used in developing nano-scale bilayer systems.

  6. Electronic transport properties of 1D-defects in graphene and other 2D-systems

    Energy Technology Data Exchange (ETDEWEB)

    Willke, P.; Wenderoth, M. [IV. Physical Institute, Solids and Nanostructures, Georg-August-University Goettingen (Germany); Schneider, M.A. [Lehrstuhl fuer Festkoerperphysik, Universitaet Erlangen-Nuernberg, Erlangen (Germany)

    2017-11-15

    The continuous progress in device miniaturization demands a thorough understanding of the electron transport processes involved. The influence of defects - discontinuities in the perfect and translational invariant crystal lattice - plays a crucial role here. For graphene in particular, they limit the carrier mobility often demanded for applications by contributing additional sources of scattering to the sample. Due to its two-dimensional nature graphene serves as an ideal system to study electron transport in the presence of defects, because one-dimensional defects like steps, grain boundaries and interfaces are easy to characterize and have profound effects on the transport properties. While their contribution to the resistance of a sample can be extracted by carefully conducted transport experiments, scanning probe methods are excellent tools to study the influence of defects locally. In this letter, the authors review the results of scattering at local defects in graphene and other 2D systems by scanning tunneling potentiometry, 4-point-probe microscopy, Kelvin probe force microscopy and conventional transport measurements. Besides the comparison of the different defect resistances important for device fabrication, the underlying scattering mechanisms are discussed giving insight into the general physics of electron scattering at defects. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. The electronic and optical properties of amorphous silica with hydrogen defects by ab initio calculations

    Science.gov (United States)

    Ren, Dahua; Xiang, Baoyan; Hu, Cheng; Qian, Kai; Cheng, Xinlu

    2018-04-01

    Hydrogen can be trapped in the bulk materials in four forms: interstitial molecular H2, interstitial atom H, O‑H+(2Si=O–H)+, Si‑H‑( {{4O}}\\bar \\equiv {{Si&x2212H}})‑ to affect the electronic and optical properties of amorphous silica. Therefore, the electronic and optical properties of defect-free and hydrogen defects in amorphous silica were performed within the scheme of density functional theory. Initially, the negative charged states hydrogen defects introduced new defect level between the valence band top and conduction band bottom. However, the neutral and positive charged state hydrogen defects made both the valence band and conduction band transfer to the lower energy. Subsequently, the optical properties such as absorption spectra, conductivity and loss functions were analyzed. It is indicated that the negative hydrogen defects caused the absorption peak ranging from 0 to 2.0 eV while the positive states produced absorption peaks at lower energy and two strong absorption peaks arose at 6.9 and 9.0 eV. However, the neutral hydrogen defects just improved the intensity of absorption spectrum. This may give insights into understanding the mechanism of laser-induced damage for optical materials. Project supported by the Science and Technology of Hubei Provincial Department of Education (No. B2017098).

  8. Function of TiO2 Lattice Defects toward Photocatalytic Processes: View of Electronic Driven Force

    Directory of Open Access Journals (Sweden)

    Huanan Cui

    2013-01-01

    Full Text Available Oxygen vacancies and Ti-related defects (OTDs are the main lattice defects of TiO2, which have great influence on its photocatalytic activity. To understand the relationship between the defects and photocatalytic activities, detailed discussions based on the electronic driven force provided by these defects are carried out during the three commonly accepted processes in photocatalytic reactions. It is found that these defects inevitably (i influence the energy structure of the pristine TiO2 as the isolate acceptor/donor level or hybrid with the original orbital, (ii provide a disordered short-range force that confuses the charge carriers transferring to surface active sites, (iii act not only as the surface active sites for trapping the charge carriers but also as the main chemisorption sites for O2, H2O, and organic species. These effects of the defects make them one of the key factors that determine the efficiency of heterogeneous photocatalysis. Clarifying the role of the defects will further facilitate the exploration and the construction of high-performance photocatalysts for practical applications.

  9. Analytic Methods for Evaluating Patterns of Multiple Congenital Anomalies in Birth Defect Registries.

    Science.gov (United States)

    Agopian, A J; Evans, Jane A; Lupo, Philip J

    2018-01-15

    It is estimated that 20 to 30% of infants with birth defects have two or more birth defects. Among these infants with multiple congenital anomalies (MCA), co-occurring anomalies may represent either chance (i.e., unrelated etiologies) or pathogenically associated patterns of anomalies. While some MCA patterns have been recognized and described (e.g., known syndromes), others have not been identified or characterized. Elucidating these patterns may result in a better understanding of the etiologies of these MCAs. This article reviews the literature with regard to analytic methods that have been used to evaluate patterns of MCAs, in particular those using birth defect registry data. A popular method for MCA assessment involves a comparison of the observed to expected ratio for a given combination of MCAs, or one of several modified versions of this comparison. Other methods include use of numerical taxonomy or other clustering techniques, multiple regression analysis, and log-linear analysis. Advantages and disadvantages of these approaches, as well as specific applications, were outlined. Despite the availability of multiple analytic approaches, relatively few MCA combinations have been assessed. The availability of large birth defects registries and computing resources that allow for automated, big data strategies for prioritizing MCA patterns may provide for new avenues for better understanding co-occurrence of birth defects. Thus, the selection of an analytic approach may depend on several considerations. Birth Defects Research 110:5-11, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  10. Shape understanding system machine understanding and human understanding

    CERN Document Server

    Les, Zbigniew

    2015-01-01

    This is the third book presenting selected results of research on the further development of the shape understanding system (SUS) carried out by authors in the newly founded Queen Jadwiga Research Institute of Understanding. In this book the new term Machine Understanding is introduced referring to a new area of research aiming to investigate the possibility of building machines with the ability to understand. It is presented that SUS needs to some extent mimic human understanding and for this reason machines are evaluated according to the rules applied for the evaluation of human understanding. The book shows how to formulate problems and how it can be tested if the machine is able to solve these problems.    

  11. Thermal conductivity of graphene with defects induced by electron beam irradiation

    Science.gov (United States)

    Malekpour, Hoda; Ramnani, Pankaj; Srinivasan, Srilok; Balasubramanian, Ganesh; Nika, Denis L.; Mulchandani, Ashok; Lake, Roger K.; Balandin, Alexander A.

    2016-07-01

    We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 1010 cm-2 to 1.8 × 1011 cm-2 the thermal conductivity decreases from ~(1.8 +/- 0.2) × 103 W mK-1 to ~(4.0 +/- 0.2) × 102 W mK-1 near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ~400 W mK-1. The thermal conductivity dependence on the defect density is analyzed using the Boltzmann transport equation and molecular dynamics simulations. The results are important for understanding phonon - point defect scattering in two-dimensional systems and for practical applications of graphene in thermal management.We investigate the thermal conductivity of suspended graphene as a function of the density of defects, ND, introduced in a controllable way. High-quality graphene layers are synthesized using chemical vapor deposition, transferred onto a transmission electron microscopy grid, and suspended over ~7.5 μm size square holes. Defects are induced by irradiation of graphene with the low-energy electron beam (20 keV) and quantified by the Raman D-to-G peak intensity ratio. As the defect density changes from 2.0 × 1010 cm-2 to 1.8 × 1011 cm-2 the thermal conductivity decreases from ~(1.8 +/- 0.2) × 103 W mK-1 to ~(4.0 +/- 0.2) × 102 W mK-1 near room temperature. At higher defect densities, the thermal conductivity reveals an intriguing saturation-type behavior at a relatively high value of ~400 W mK-1. The thermal conductivity dependence on the defect density is

  12. Reduction in Defect Content in ODS Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ritherdon, J.; Jones, A.R.

    2000-02-01

    The work detailed within this report is a continuation of earlier work that was carried out under contract number IDX-SY382V. The earlier work comprised a literature review of the sources and types of defects found principally in Fe-based ODS alloys together with a series of experiments designed to identify defects in ODS Fe{sub 3}Al material and recommend methods of defect reduction. Defects found in the Mechanically Alloyed (MA) ODS Fe{sub 3}Al included regions of incomplete MA, porosity, intrusions and fine-grained stringers. Some defects tended to be found in association with one another e.g. intrusions and fine-grained stringers. Preliminary powder separation experiments were also performed. The scope and objectives of the present work were laid out in the technical proposal ``Reduction in Defect Content in ODS Alloys--II'' which formed the basis of amendment 3 of the current contract. The current studies were devised in the context of the preceding work with a view to extending and concluding certain experiments while exploring new avenues of investigation of defect control and reduction where appropriate. All work proposed was within the context of achieving an ODS Fe{sub 3}Al alloy of improved overall quality and potential creep performance (particularly) in the consolidated, release condition. The interim outturn of the experimental work performed is also reported.

  13. Modeling of Powder Bed Manufacturing Defects

    Science.gov (United States)

    Mindt, H.-W.; Desmaison, O.; Megahed, M.; Peralta, A.; Neumann, J.

    2018-01-01

    Powder bed additive manufacturing offers unmatched capabilities. The deposition resolution achieved is extremely high enabling the production of innovative functional products and materials. Achieving the desired final quality is, however, hampered by many potential defects that have to be managed in due course of the manufacturing process. Defects observed in products manufactured via powder bed fusion have been studied experimentally. In this effort we have relied on experiments reported in the literature and—when experimental data were not sufficient—we have performed additional experiments providing an extended foundation for defect analysis. There is large interest in reducing the effort and cost of additive manufacturing process qualification and certification using integrated computational material engineering. A prerequisite is, however, that numerical methods can indeed capture defects. A multiscale multiphysics platform is developed and applied to predict and explain the origin of several defects that have been observed experimentally during laser-based powder bed fusion processes. The models utilized are briefly introduced. The ability of the models to capture the observed defects is verified. The root cause of the defects is explained by analyzing the numerical results thus confirming the ability of numerical methods to provide a foundation for rapid process qualification.

  14. Extrusion product defects: a statistical study

    International Nuclear Information System (INIS)

    Qamar, S.Z.; Arif, A.F.M.; Sheikh, A.K.

    2003-01-01

    In any manufacturing environment, defects resulting in rework or rejection are directly related to product cost and quality, and indirectly linked with process, tooling and product design. An analysis of product defects is therefore integral to any attempt at improving productivity, efficiency and quality. Commercial aluminum extrusion is generally a hot working process and consists of a series of different but integrated operations: billet preheating and sizing, die set and container preheating, billet loading and deformation, product sizing and stretching/roll-correction, age hardening, and painting/anodizing. Product defects can be traced back to problems in billet material and preparation, die and die set design and maintenance, process variable aberrations (ram speed, extrusion pressure, container temperature, etc), and post-extrusion treatment (age hardening, painting/anodizing, etc). The current paper attempts to analyze statistically the product defects commonly encountered in a commercial hot aluminum extrusion setup. Real-world rejection data, covering a period of nine years, has been researched and collected from a local structural aluminum extrusion facility. Rejection probabilities have been calculated for all the defects studied. The nine-year rejection data have been statistically analyzed on the basis of (i) an overall breakdown of defects, (ii) year-wise rejection behavior, (iii) breakdown of defects in each of three cost centers: press, anodizing, and painting. (author)

  15. Exploring atomic defects in molybdenum disulphide monolayers

    KAUST Repository

    Hong, Jinhua; Hu, Zhixin; Probert, Matt; Li, Kun; Lv, Danhui; Yang, Xinan; Gu, Lin; Mao, Nannan; Feng, Qingliang; Xie, Liming; Zhang, Jin; Wu, Dianzhong; Zhang, Zhiyong; Jin, Chuanhong; Ji, Wei; Zhang, Xixiang; Yuan, Jun; Zhang, Ze

    2015-01-01

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm '2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  16. Platelet rich fibrin in jaw defects

    Science.gov (United States)

    Nica, Diana; Ianes, Emilia; Pricop, Marius

    2016-03-01

    Platelet rich fibrin (PRF) is a tissue product of autologous origin abundant in growth factors, widely used in regenerative procedures. Aim of the study: Evaluation of the regenerative effect of PRF added in the bony defects (after tooth removal or after cystectomy) Material and methods: The comparative nonrandomized study included 22 patients divided into 2 groups. The first group (the test group) included 10 patients where the bony defects were treated without any harvesting material. The second group included 12 patients where the bony defects were filled with PRF. The bony defect design was not critical, with one to two walls missing. After the surgeries, a close clinically monitoring was carried out. The selected cases were investigated using both cone beam computer tomography (CBCT) and radiographic techniques after 10 weeks postoperatively. Results: Faster bone regeneration was observed in the bony defects filled with PRF comparing with the not grafted bony defects. Conclusions: PRF added in the bony defects accelerates the bone regeneration. This simplifies the surgical procedures and decreases the economic costs.

  17. Exploring atomic defects in molybdenum disulphide monolayers

    KAUST Repository

    Hong, Jinhua

    2015-02-19

    Defects usually play an important role in tailoring various properties of two-dimensional materials. Defects in two-dimensional monolayer molybdenum disulphide may be responsible for large variation of electric and optical properties. Here we present a comprehensive joint experiment-theory investigation of point defects in monolayer molybdenum disulphide prepared by mechanical exfoliation, physical and chemical vapour deposition. Defect species are systematically identified and their concentrations determined by aberration-corrected scanning transmission electron microscopy, and also studied by ab-initio calculation. Defect density up to 3.5 × 10 13 cm \\'2 is found and the dominant category of defects changes from sulphur vacancy in mechanical exfoliation and chemical vapour deposition samples to molybdenum antisite in physical vapour deposition samples. Influence of defects on electronic structure and charge-carrier mobility are predicted by calculation and observed by electric transport measurement. In light of these results, the growth of ultra-high-quality monolayer molybdenum disulphide appears a primary task for the community pursuing high-performance electronic devices.

  18. Yang Monopoles and Emergent Three-Dimensional Topological Defects in Interacting Bosons

    Science.gov (United States)

    Yan, Yangqian; Zhou, Qi

    2018-06-01

    The Yang monopole as a zero-dimensional topological defect has been well established in multiple fields in physics. However, it remains an intriguing question to understand the interaction effects on Yang monopoles. Here, we show that the collective motion of many interacting bosons gives rise to exotic topological defects that are distinct from Yang monopoles seen by a single particle. Whereas interactions may distribute Yang monopoles in the parameter space or glue them to a single giant one of multiple charges, three-dimensional topological defects also arise from continuous manifolds of degenerate many-body eigenstates. Their projections in lower dimensions lead to knotted nodal lines and nodal rings. Our results suggest that ultracold bosonic atoms can be used to create emergent topological defects and directly measure topological invariants that are not easy to access in solids.

  19. An atomistic vision of the Mass Action Law: Prediction of carbon/oxygen defects in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Brenet, G.; Timerkaeva, D.; Caliste, D.; Pochet, P. [CEA, INAC-SP2M, Atomistic Simulation Laboratory, F-38000 Grenoble (France); Univ. Grenoble Alpes, INAC-SP2M, L-Sim, F-38000 Grenoble (France); Sgourou, E. N.; Londos, C. A. [University of Athens, Solid State Physics Section, Panepistimiopolis Zografos, Athens 157 84 (Greece)

    2015-09-28

    We introduce an atomistic description of the kinetic Mass Action Law to predict concentrations of defects and complexes. We demonstrate in this paper that this approach accurately predicts carbon/oxygen related defect concentrations in silicon upon annealing. The model requires binding and migration energies of the impurities and complexes, here obtained from density functional theory (DFT) calculations. Vacancy-oxygen complex kinetics are studied as a model system during both isochronal and isothermal annealing. Results are in good agreement with experimental data, confirming the success of the methodology. More importantly, it gives access to the sequence of chain reactions by which oxygen and carbon related complexes are created in silicon. Beside the case of silicon, the understanding of such intricate reactions is a key to develop point defect engineering strategies to control defects and thus semiconductors properties.

  20. Deformation behaviour induced by point defects near a Cu(0 0 1) surface

    International Nuclear Information System (INIS)

    Said-Ettaoussi, M.; Jimenez-Saez, J.C.; Perez-Martin, A.M.C.; Jimenez-Rodriguez, J.J.

    2004-01-01

    In order to attain a satisfactory understanding of many of the properties of metallic surfaces, it is necessary to take into account the distorting effect of self-interstitials and vacancies. The present work is focused on the study of the behaviour of neighbouring atoms around point defects. The conjugate gradient method with an empiric many-body potential has been used to study the point defect-surface interaction. Point defects have been generated at several depths under a Cu(0 0 1) surface and then the whole system driven to the minimum energy state. The displacement field has been obtained in the vicinity to the defect. An energetic analysis is also carried out calculating formation and migration energies

  1. Atomic-scale effects of chromium-doping on defect behaviour in uranium dioxide fuel

    International Nuclear Information System (INIS)

    Guo, Zhexi; Ngayam-Happy, Raoul; Krack, Matthias; Pautz, Andreas

    2017-01-01

    The effects of doping conventional UO 2 fuel with chromium are studied through atomistic simulations using empirical force field methods. We first analyse the stable structures of unirradiated doped fuel by determining the preferred lattice configuration of chromium ions and oxygen vacancies within the matrix. In order to understand the physical effects of the dopants, we investigate the energy change upon inserting isolated defects and Frenkel pairs in the vicinity of chromium. The behaviour of point defects is then studied with collision cascade simulations and relaxation of doped simulation cells containing Frenkel pairs. The defective structures are analysed using an in-house tool named ASTRAM. Results indicate definite effects of chromium-doping on the ease with which defects are formed. Moreover, the extent of Cr effects on the residual damage following a displacement cascade is dependent on the dopant distribution and concentration in the fuel matrix.

  2. Atomic-scale effects of chromium-doping on defect behaviour in uranium dioxide fuel

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Zhexi; Ngayam-Happy, Raoul, E-mail: raoul.ngayam-happy@psi.ch; Krack, Matthias; Pautz, Andreas

    2017-05-15

    The effects of doping conventional UO{sub 2} fuel with chromium are studied through atomistic simulations using empirical force field methods. We first analyse the stable structures of unirradiated doped fuel by determining the preferred lattice configuration of chromium ions and oxygen vacancies within the matrix. In order to understand the physical effects of the dopants, we investigate the energy change upon inserting isolated defects and Frenkel pairs in the vicinity of chromium. The behaviour of point defects is then studied with collision cascade simulations and relaxation of doped simulation cells containing Frenkel pairs. The defective structures are analysed using an in-house tool named ASTRAM. Results indicate definite effects of chromium-doping on the ease with which defects are formed. Moreover, the extent of Cr effects on the residual damage following a displacement cascade is dependent on the dopant distribution and concentration in the fuel matrix.

  3. Zirconium - ab initio modelling of point defects diffusion

    International Nuclear Information System (INIS)

    Gasca, Petrica

    2010-01-01

    Zirconium is the main element of the cladding found in pressurized water reactors, under an alloy form. Under irradiation, the cladding elongate significantly, phenomena attributed to the vacancy dislocation loops growth in the basal planes of the hexagonal compact structure. The understanding of the atomic scale mechanisms originating this process motivated this work. Using the ab initio atomic modeling technique we studied the structure and mobility of point defects in Zirconium. This led us to find four interstitial point defects with formation energies in an interval of 0.11 eV. The migration paths study allowed the discovery of activation energies, used as entry parameters for a kinetic Monte Carlo code. This code was developed for calculating the diffusion coefficient of the interstitial point defect. Our results suggest a migration parallel to the basal plane twice as fast as one parallel to the c direction, with an activation energy of 0.08 eV, independent of the direction. The vacancy diffusion coefficient, estimated with a two-jump model, is also anisotropic, with a faster process in the basal planes than perpendicular to them. Hydrogen influence on the vacancy dislocation loops nucleation was also studied, due to recent experimental observations of cladding growth acceleration in the presence of this element [fr

  4. Proteomic approach to characterize biochemistry of meat quality defects.

    Science.gov (United States)

    Schilling, M W; Suman, S P; Zhang, X; Nair, M N; Desai, M A; Cai, K; Ciaramella, M A; Allen, P J

    2017-10-01

    Proteomics can be used to characterize quality defects including pale, soft, and exudative (PSE) meat (pork and poultry), woody broiler breast meat, reddish catfish fillets, meat toughness, and beef myoglobin oxidation. PSE broiler meat was characterized by 15 proteins that differed in abundance in comparison to normal broiler breast meat, and eight proteins were differentially expressed in woody breast meat in comparison to normal breast meat. Hemoglobin was the only protein that was differentially expressed between red and normal catfish fillets. However, inducing low oxygen and/or heat stress conditions to catfish fillets did not lead to the production of red fillets. Proteomic data provided information pertaining to the protein differences that exist in meat quality defects. However, these data need to be evaluated in conjunction with information pertaining to genetics, nutrition, environment of the live animal, muscle to meat conversion, meat quality analyses and sensory attributes to understand causality, protein biomarkers, and ultimately how to prevent quality defects. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Silicide Schottky Contacts to Silicon: Screened Pinning at Defect Levels

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, T.J.

    1999-03-11

    Silicide Schottky contacts can be as large as 0.955 eV (E{sub v} + 0.165 eV) on n-type silicon and as large as 1.05 eV (E{sub c} {minus} 0.07 eV) on p-type silicon. Current models of Schottky barrier formation do not provide a satisfactory explanation of occurrence of this wide variation. A model for understanding Schottky contacts via screened pinning at defect levels is presented. In the present paper it is shown that most transition metal silicides are pinned approximately 0.48 eV above the valence band by interstitial Si clusters. Rare earth disilicides pin close to the divacancy acceptor level 0.41 eV below the conduction band edge while high work function silicides of Ir and Pt pin close to the divacancy donor level 0.21 eV above the valence band edge. Selection of a particular defect pinning level depends strongly on the relative positions of the silicide work function and the defect energy level on an absolute energy scale.

  6. Influence of the medium's dimensionality on defect-mediated turbulence.

    Science.gov (United States)

    St-Yves, Ghislain; Davidsen, Jörn

    2015-03-01

    Spatiotemporal chaos in oscillatory and excitable media is often characterized by the presence of phase singularities called defects. Understanding such defect-mediated turbulence and its dependence on the dimensionality of a given system is an important challenge in nonlinear dynamics. This is especially true in the context of ventricular fibrillation in the heart, where the importance of the thickness of the ventricular wall is contentious. Here, we study defect-mediated turbulence arising in two different regimes in a conceptual model of excitable media and investigate how the statistical character of the turbulence changes if the thickness of the medium is changed from (quasi-) two- dimensional to three dimensional. We find that the thickness of the medium does not have a significant influence in, far from onset, fully developed turbulence while there is a clear transition if the system is close to a spiral instability. We provide clear evidence that the observed transition and change in the mechanism that drives the turbulent behavior is purely a consequence of the dimensionality of the medium. Using filament tracking, we further show that the statistical properties in the three-dimensional medium are different from those in turbulent regimes arising from filament instabilities like the negative line tension instability. Simulations also show that the presence of this unique three-dimensional turbulent dynamics is not model specific.

  7. Defective proviruses rapidly accumulate during acute HIV-1 infection

    Science.gov (United States)

    Bruner, Katherine M.; Murray, Alexandra J.; Pollack, Ross A.; Soliman, Mary G.; Laskey, Sarah B.; Capoferri, Adam A.; Lai, Jun; Strain, Matthew C.; Lada, Steven M.; Hoh, Rebecca; Ho, Ya-Chi; Richman, Douglas D.; Deeks, Steven G.; Siliciano, Janet D.; Siliciano, Robert F.

    2016-01-01

    Although antiretroviral therapy (ART) suppresses viral replication to clinically undetectable levels, HIV-1 persists in CD4+ T cells in a latent form not targeted by the immune system or ART1–5. This latent reservoir is a major barrier to cure. Many individuals initiate ART during chronic infection, and in this setting, most proviruses are defective6. However, the dynamics of the accumulation and persistence of defective proviruses during acute HIV-1 infection are largely unknown. Here we show that defective proviruses accumulate rapidly within the first few weeks of infection to make up over 93% of all proviruses, regardless of how early ART is initiated. Using an unbiased method to amplify near full-length proviral genomes from HIV-1 infected adults treated at different stages of infection, we demonstrate that early ART initiation limits the size of the reservoir but does not profoundly impact the proviral landscape. This analysis allows us to revise our understanding of the composition of proviral populations and estimate the true reservoir size in individuals treated early vs. late in infection. Additionally, we demonstrate that common assays for measuring the reservoir do not correlate with reservoir size. These findings reveal hurdles that must be overcome to successfully analyze future HIV-1 cure strategies. PMID:27500724

  8. Rag defects and thymic stroma: lessons from animal models

    Directory of Open Access Journals (Sweden)

    Veronica eMarrella

    2014-06-01

    Full Text Available Thymocytes and thymic epithelial cells (TECs cross-talk is essential to support T-cell development and preserve thymic architecture and maturation of TECs and Foxp3+ natural regulatory T (nTreg cells. Accordingly, disruption of thymic lymphostromal cross-talk may have major implications on the thymic mechanisms that govern T cell tolerance. Several genetic defects have been described in humans that affect early stages of T cell development (leading to Severe Combined Immune Deficiency, SCID or late stages in thymocyte maturation (resulting in combined immunodeficiency. Hypomorphic mutations in SCID-causing genes may allow for generation of a limited pool of T lymphocytes with a restricted repertoire. These conditions are often associated with infiltration of peripheral tissues by activated T cells and immune dysregulation, as best exemplified by Omenn syndrome (OS. In this review, we will discuss our recent findings on abnormalities of thymic microenvironment in OS with a special focus of defective maturation of TECs, altered distribution of thymic dendritic cells (DCs and impairment of deletional and non-deletional mechanisms of central tolerance. Here, taking advantage of mouse models of OS and atypical SCID, we will discuss how modifications in stromal compartment impact and shape lymphocyte differentiation, and vice versa how inefficient T cell signalling results in defective stromal maturation. These findings are instrumental to understand the extent to which novel therapeutic strategies should act on thymic stroma to achieve full immune reconstitution.

  9. Detection of defective fuel rods in water reactors - a review

    International Nuclear Information System (INIS)

    Hartog, J.M.

    1980-01-01

    Consideration of the fundamental processes of fission product release within fuel pellets and at the pellet surface, and its transport in the fuel/cladding interspace and from fuel rod to coolant, indicates what radio-nuclides will be detectable in the coolant from small and large cladding failures. A better understanding of the aggregate fission product transport is required to allow reactor operators to interpret signals from detection systems in terms of quantitative cladding deterioration. This needs experimental investigation in a specially instrumented loop, as well as development of a technique to cause a rod to defect deliberately during steady power operation. (author)

  10. Interdisciplinary Management of an Isolated Intrabony Defect

    Directory of Open Access Journals (Sweden)

    Sheetal Ghivari

    2014-01-01

    Full Text Available The treatment of intrabony defects is a real challenge in molar teeth as it is chronic, slowly progressing disease which needs timely intervention. Periodontal inflammation associated with intrabony defect is not a separate entity as it secondarily affects the pulp causing retrograde pulpitis. However, treatment of these lesions will be complicated due to extensive bone loss. The tooth was endodontically treated followed by periodontal surgery to eliminate the deep periodontal pocket and promote bone fill in osseous defect. PepGen P-15 composited with platelet rich plasma was utilized for enhancing bone formation. The combination of these graft materials provides synergistic effect on bone regeneration.

  11. Mass defect effects in atomic clocks

    Science.gov (United States)

    Yudin, Valeriy; Taichenachev, Alexey

    2018-03-01

    We consider some implications of the mass defect on the frequency of atomic transitions. We have found that some well-known frequency shifts (the gravitational shift and motion-induced shifts such as quadratic Doppler and micromotion shifts) can be interpreted as consequences of the mass defect in quantum atomic physics, i.e. without the need for the concept of time dilation used in special and general relativity theories. Moreover, we show that the inclusion of the mass defect leads to previously unknown shifts for clocks based on trapped ions.

  12. Tibial and fibular developmental fields defects

    International Nuclear Information System (INIS)

    Khoury, N.J.; Haddad, M.C.; Hourani, M.H.

    1999-01-01

    Malformations of the lower limbs are rare and heterogeneous anomalies. To explain the diversity and complexity of these abnormalities, authors introduced the concept of tibial and fibular developmental fields. Defects in these fields are responsible for different malformations, which have been described, to our knowledge, in only one report in the radiology literature. We present a case of a newborn with femoral bifurcation, absent fibulae and talar bones, ankle and foot malformations, and associated atrial septal defect. Our case is an example of defects in both fibular and tibial developmental fields. (orig.)

  13. Study of irradiation induced defects in silicon

    International Nuclear Information System (INIS)

    Pal, Gayatri; Sebastian, K.C.; Somayajulu, D.R.S.; Chintalapudi, S.N.

    2000-01-01

    Pure high resistivity (6000 ohm-cm) silicon wafers were recoil implanted with 1.8 MeV 111 In ions. As-irradiated wafers showed a 13 MHz quadrupole interaction frequency, which was not observed earlier. The annealing behaviour of these defects in the implanted wafers was studied between room temperature and 1073 K. At different annealing temperatures two more interaction frequencies corresponding to defect complexes D2 and D3 are observed. Even though the experimental conditions were different, these are identical to the earlier reported ones. Based on an empirical point charge model calculation, an attempt is made to identify the configuration of these defect complexes. (author)

  14. Dimensions of defects determined by radiographical testing

    International Nuclear Information System (INIS)

    Oesterberg, J.

    Normally industrial radiography using x-rays or radionuclides gives information on the existence of defects in welds. These defects may in some instances be harmless, the size of the flaw is important. Radiography may be used for determining the thickness of the defect in many cases, by measuring the blackening of the photographic film used. The report gives a theoretical treatment of the problems and goes on to practical examples of the application. For flaws that have a width of at least 0.3 mm, a thickness of the order 0.1 mm can be determined with sufficient accuracy in materials 40 mm thick.(P.Aa.)

  15. Knowledge of birth defects among nursing mothers in a developing ...

    African Journals Online (AJOL)

    sponsibility is placed on parents in the recognition of these defects. Objectives: The .... be prevented, detected, inherited or treated; and if they knew that folic ... could be used to prevent certain birth defects. ..... birth defects such as smoking.

  16. Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence

    DEFF Research Database (Denmark)

    Bjørsum-Meyer, Thomas; Herlin, Morten; Qvist, Niels

    2016-01-01

    Background: The vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome are rare conditions. We aimed to present two cases with the vertebral defect, anal atresia, cardiac...... defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser co-occurrence from our local surgical center and through a systematic literature search detect published cases. Furthermore, we aimed to collect existing knowledge...... in the embryopathogenesis and genetics in order to discuss a possible link between the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome. Case presentation: Our first case was a white girl...

  17. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    Energy Technology Data Exchange (ETDEWEB)

    Zobelli, A

    2007-10-15

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  18. Electron beam generation and structure of defects in carbon and boron nitride nano-tubes

    International Nuclear Information System (INIS)

    Zobelli, A.

    2007-10-01

    The nature and role of defects is of primary importance to understand the physical properties of C and BN (boron nitride) single walled nano-tubes (SWNTs). Transmission electron microscopy (TEM) is a well known powerful tool to study the structure of defects in materials. However, in the case of SWNTs, the electron irradiation of the TEM may knock out atoms. This effect may alter the native structure of the tube, and has also been proposed as a potential tool for nano-engineering of nano-tubular structures. Here we develop a theoretical description of the irradiation mechanism. First, the anisotropy of the emission energy threshold is obtained via density functional based calculations. Then, we numerically derive the total Mott cross section for different emission sites of carbon and boron nitride nano-tubes with different chiralities. Using a dedicated STEM (Scanning Transmission Electron Microscope) microscope with experimental conditions optimised on the basis of derived cross-sections, we are able to control the generation of defects in nano-tubular systems. Either point or line defects can be obtained with a spatial resolution of a few nanometers. The structure, energetics and electronics of point and line defects in BN systems have been investigated. Stability of mono- and di- vacancy defects in hexagonal boron nitride layers is investigated, and their activation energies and reaction paths for diffusion have been derived using the nudged elastic band method (NEB) combined with density functional based techniques. We demonstrate that the appearance of extended linear defects under electron irradiation is more favorable than a random distribution of point defects and this is due to the existence of preferential sites for atom emission in the presence of pre-existing defects, rather than thermal vacancy nucleation and migration. (author)

  19. Defect engineering: design tools for solid state electrochemical devices

    International Nuclear Information System (INIS)

    Tuller, Harry L.

    2003-01-01

    The interest in solid state electrochemical devices including sensors, fuel cells, batteries, oxygen permeation membranes, etc. has grown rapidly in recent years. Many of the same figures of merit apply to these different applications, the key ones being ionic conduction in solid electrolytes, mixed ionic-electronic conduction (MIEC) in electrodes and permeation membranes, and gas-solid reaction kinetics in sensors and fuel cells. Optimization of device performance often relies on the careful understanding and control of both ionic and electronic defects in the materials that make up the key device components. To date, most materials in use have been discovered serendipitously. A key focus of this paper is on the tools available to scientists and engineers to practice 'defect engineering' for the purpose of optimizing the performance of such materials. Dopants, controlled structural disorder, and interfaces are examined in relation to increasing the conductivity of solid electrolytes. The creation of defect bands is demonstrated as a means for introducing high levels of electronic conductivity into a solid electrolyte for the purpose of creating a mixed conductor and thereby a monolithic fuel cell structure. Dopants are also examined as a means of reducing losses in a high temperature resonant sensor platform. The control of microstructure, down to the nano-scale, is shown capable of inverting the predominant ionic to an electronic charge carrier and thereby markedly modifying electrical properties. Electrochemical bias and light are also discussed in terms of creating defects locally thereby providing means for micromachining a broad range of materials with precise dimensional control, low residual stress and controlled etch rates

  20. Birth defects in perinatal infants in areas contiguous to Hongyanhe Nuclear Power Plant before its normal operation

    International Nuclear Information System (INIS)

    Zhou Ling; Yin Zhihua; Han Zhonghui

    2011-01-01

    Objective: To understand the status of birth defects among the perinatal infants in the areas contiguous to Hongyanhe nuclear power plant before its normal operation, so as to provide background information for the evaluation of the impact of nuclear power plant on birth defects. Methods: From 1 October 1995 to 30 September 2009 the midwifery units at second class and above of Wafangdian City were asked to be in charge of recording the birth defects among the perinatal infants born during this period within the range of 50 km around the Hongyanhe nuclear power plant. Results: The total number of birth defects was 697, and the maternal number Was 83779. The average defect rate Was 83.20/10 4 . There were significant differences in the birth defect rate among different years (χ 2 =39.54, P<0.05), however, without linear trend therein,and among the survey areas (χ 2 =15.36, P<0.05) as well. The top five birth defects were congenital heart disease (148 cases), cleft lip with cleft palate (67 cases), congenital hydrocephalus (63 cases), and spina bifida (37 cases) and cleft lip (36 cases). Conclusions: The birth defect rate within the range of 50 km around the Hongyanhe nuclear power plant is lower than that of the region of Liaoning Province and the national rate of birth defects. (authors)

  1. Geometrically unrestricted, topologically constrained control of liquid crystal defects using simultaneous holonomic magnetic and holographic optical manipulation

    Science.gov (United States)

    Varney, Michael C. M.; Jenness, Nathan J.; Smalyukh, Ivan I.

    2014-02-01

    Despite the recent progress in physical control and manipulation of various condensed matter, atomic, and particle systems, including individual atoms and photons, our ability to control topological defects remains limited. Recently, controlled generation, spatial translation, and stretching of topological point and line defects have been achieved using laser tweezers and liquid crystals as model defect-hosting systems. However, many modes of manipulation remain hindered by limitations inherent to optical trapping. To overcome some of these limitations, we integrate holographic optical tweezers with a magnetic manipulation system, which enables fully holonomic manipulation of defects by means of optically and magnetically controllable colloids used as "handles" to transfer forces and torques to various liquid crystal defects. These colloidal handles are magnetically rotated around determined axes and are optically translated along three-dimensional pathways while mechanically attached to defects, which, combined with inducing spatially localized nematic-isotropic phase transitions, allow for geometrically unrestricted control of defects, including previously unrealized modes of noncontact manipulation, such as the twisting of disclination clusters. These manipulation capabilities may allow for probing topological constraints and the nature of defects in unprecedented ways, providing the foundation for a tabletop laboratory to expand our understanding of the role defects play in fields ranging from subatomic particle physics to early-universe cosmology.

  2. ILT based defect simulation of inspection images accurately predicts mask defect printability on wafer

    Science.gov (United States)

    Deep, Prakash; Paninjath, Sankaranarayanan; Pereira, Mark; Buck, Peter

    2016-05-01

    At advanced technology nodes mask complexity has been increased because of large-scale use of resolution enhancement technologies (RET) which includes Optical Proximity Correction (OPC), Inverse Lithography Technology (ILT) and Source Mask Optimization (SMO). The number of defects detected during inspection of such mask increased drastically and differentiation of critical and non-critical defects are more challenging, complex and time consuming. Because of significant defectivity of EUVL masks and non-availability of actinic inspection, it is important and also challenging to predict the criticality of defects for printability on wafer. This is one of the significant barriers for the adoption of EUVL for semiconductor manufacturing. Techniques to decide criticality of defects from images captured using non actinic inspection images is desired till actinic inspection is not available. High resolution inspection of photomask images detects many defects which are used for process and mask qualification. Repairing all defects is not practical and probably not required, however it's imperative to know which defects are severe enough to impact wafer before repair. Additionally, wafer printability check is always desired after repairing a defect. AIMSTM review is the industry standard for this, however doing AIMSTM review for all defects is expensive and very time consuming. Fast, accurate and an economical mechanism is desired which can predict defect printability on wafer accurately and quickly from images captured using high resolution inspection machine. Predicting defect printability from such images is challenging due to the fact that the high resolution images do not correlate with actual mask contours. The challenge is increased due to use of different optical condition during inspection other than actual scanner condition, and defects found in such images do not have correlation with actual impact on wafer. Our automated defect simulation tool predicts

  3. Holographic entanglement entropy of surface defects

    Energy Technology Data Exchange (ETDEWEB)

    Gentle, Simon A.; Gutperle, Michael; Marasinou, Chrysostomos [Department of Physics and Astronomy, University of California,Los Angeles, CA 90095 (United States)

    2016-04-12

    We calculate the holographic entanglement entropy in type IIB supergravity solutions that are dual to half-BPS disorder-type surface defects in N=4 supersymmetric Yang-Mills theory. The entanglement entropy is calculated for a ball-shaped region bisected by a surface defect. Using the bubbling supergravity solutions we also compute the expectation value of the defect operator. Combining our result with the previously-calculated one-point function of the stress tensor in the presence of the defect, we adapt the calculation of Lewkowycz and Maldacena http://dx.doi.org/10.1007/JHEP05(2014)025 to obtain a second expression for the entanglement entropy. Our two expressions agree up to an additional term, whose possible origin and significance is discussed.

  4. Holographic entanglement entropy of surface defects

    International Nuclear Information System (INIS)

    Gentle, Simon A.; Gutperle, Michael; Marasinou, Chrysostomos

    2016-01-01

    We calculate the holographic entanglement entropy in type IIB supergravity solutions that are dual to half-BPS disorder-type surface defects in N=4 supersymmetric Yang-Mills theory. The entanglement entropy is calculated for a ball-shaped region bisected by a surface defect. Using the bubbling supergravity solutions we also compute the expectation value of the defect operator. Combining our result with the previously-calculated one-point function of the stress tensor in the presence of the defect, we adapt the calculation of Lewkowycz and Maldacena http://dx.doi.org/10.1007/JHEP05(2014)025 to obtain a second expression for the entanglement entropy. Our two expressions agree up to an additional term, whose possible origin and significance is discussed.

  5. Di-interstitial defect in silicon revisited

    International Nuclear Information System (INIS)

    Londos, C. A.; Antonaras, G.; Chroneos, A.

    2013-01-01

    Infrared spectroscopy was used to study the defect spectrum of Cz-Si samples following fast neutron irradiation. We mainly focus on the band at 533 cm −1 , which disappears from the spectra at ∼170 °C, exhibiting similar thermal stability with the Si-P6 electron paramagnetic resonance (EPR) spectrum previously correlated with the di-interstitial defect. The suggested structural model of this defect comprises of two self-interstitial atoms located symmetrically around a lattice site Si atom. The band anneals out following a first-order kinetics with an activation energy of 0.88 ± 0.3 eV. This value does not deviate considerably from previously quoted experimental and theoretical values for the di-interstitial defect. The present results indicate that the 533 cm −1 IR band originates from the same structure as that of the Si-P6 EPR spectrum

  6. Microcephaly and Other Birth Defects: Zika

    Science.gov (United States)

    ... Español (Spanish) Recommend on Facebook Tweet Share Compartir Zika and Microcephaly Microcephaly is a birth defect in ... pregnancy or has stopped growing after birth. Congenital Zika Syndrome Congenital Zika syndrome is a unique pattern ...

  7. Ultrasonic determination of the size of defects

    International Nuclear Information System (INIS)

    Zetterwall, T.

    1989-01-01

    The paper presents results from a study of ultrasonic testing of materials. The main topic has been the determination of the size, length and deep, of cracks or defects in stainless steel plates. (K.A.E)

  8. Focal skin defect, limb anomalies and microphthalmia.

    NARCIS (Netherlands)

    Jackson, K.E.; Andersson, H.C.

    2004-01-01

    We describe two unrelated female patients with congenital single focal skin defects, unilateral microphthalmia and limb anomalies. Growth and psychomotor development were normal and no brain malformation was detected. Although eye and limb anomalies are commonly associated, clinical anophthalmia and

  9. Genetic Counseling for Congenital Heart Defects

    Science.gov (United States)

    ... Artery Disease Venous Thromboembolism Aortic Aneurysm More Genetic Counseling for Congenital Heart Defects Updated:Jan 19,2018 ... with congenital heart disease considers having children. Genetic counseling can help answer these questions and address your ...

  10. Reduction of Defects in Jewelry Manufacturing

    Science.gov (United States)

    Ayudhya, Phitchaya Phanomwan na; Tangjitsitcharoen, Somkiat

    2017-06-01

    The aim of this research was to reduce the defects of gem bracelet found during manufacturing process at a jewelry company. It was found that gem bracelet product has the highest rejects compared to the rejects found in ring, earring, and pendant products. Types of defect were classified by using Pareto Diagram consisting of gem falling, seam, unclean casting, impinge, and deformation. The causes of defect were analyzed by Cause and Effect Diagram and applied Failure Mode and Effects Analysis (FMEA) was applied during manufacturing processes. This research found that the improvement of manufacturing process could reduce the Risk Priority Number (RPN) and total of all defects by 48.70% and 48.89%, respectively.

  11. Dental Enamel Defects and Celiac Disease

    Science.gov (United States)

    ... Digestive System & How it Works Zollinger-Ellison Syndrome Dental Enamel Defects and Celiac Disease Celiac disease manifestations ... affecting any organ or body system. One manifestation—dental enamel defects—can help dentists and other health ...

  12. Creation of radiation defects in KCl crystals

    International Nuclear Information System (INIS)

    Lushchik, A.Ch.; Pung, L.A.; Khaldre, Yu.Yu.; Kolk, Yu.V.

    1981-01-01

    Optical and EPR methods were used to study the creation of anion and cation Frenkel defects in KCl crystals irradiated by X-ray and VUV-radiation. The decay of excitons with the creation of charged Frenkel defects (α and I centres) was detected and investigated at 4.2 K. The decay of excitons as well as the recombination of electrons with self-trapped holes leads to the creation of neutral Frenkel defects (F and H centres). The creation of Cl 3 - and Vsub(F) centres (cation vacancy is a component of these centres) by X-irradiation at 80 K proves the possibility of cation defects creation in KCl [ru

  13. Infrared computations of defect Schur indices

    Energy Technology Data Exchange (ETDEWEB)

    Córdova, Clay [School of Natural Sciences, Institute for Advanced Study,1 Einstein Dr., Princeton, NJ (United States); Gaiotto, Davide [Perimeter Institute for Theoretical Physics,31 Caroline St., Waterloo, Ontario, N2L 2Y5 (Canada); Shao, Shu-Heng [Jefferson Physical Laboratory, Harvard University,17 Oxford St., Cambridge, MA (United States); School of Natural Sciences, Institute for Advanced Study,1 Einstein Dr., Princeton, NJ (United States)

    2016-11-18

    We conjecture a formula for the Schur index of four-dimensional N=2 theories in the presence of boundary conditions and/or line defects, in terms of the low-energy effective Seiberg-Witten description of the system together with massive BPS excitations. We test our proposal in a variety of examples for SU(2) gauge theories, either conformal or asymptotically free. We use the conjecture to compute these defect-enriched Schur indices for theories which lack a Lagrangian description, such as Argyres-Douglas theories. We demonstrate in various examples that line defect indices can be expressed as sums of characters of the associated two-dimensional chiral algebra and that for Argyres-Douglas theories the line defect OPE reduces in the index to the Verlinde algebra.

  14. Intrinsic defects in 3D printed materials

    OpenAIRE

    Bolton, Christopher; Dagastine, Raymond

    2015-01-01

    We discuss the impact of bulk structural defects on the coherence, phase and polarisation of light passing through transparent 3D printed materials fabricated using a variety of commercial print technologies.

  15. International conference on defects in insulating crystals

    International Nuclear Information System (INIS)

    1977-01-01

    Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states

  16. Apparatus for locating defective nuclear fuel elements

    International Nuclear Information System (INIS)

    Lawrie, W.E.

    1979-01-01

    An ultrasonic search unit for locating defective fuel elements within a fuel assembly used in a water cooled nuclear reactor is presented. The unit is capable of freely traversing the restricted spaces between the fuel elements

  17. Point defects dynamics in a stress field

    International Nuclear Information System (INIS)

    Smetniansky de De Grande, Nelida.

    1989-01-01

    The dependence of anisotropic defect diffusion on stress is studied for a hexagonal close packed (hcp) material under irradiation and uniaxially stressed. The diffusion is described as a discrete process of thermally activated jumps. It is shown that the presence of an external stress field enhances the intrinsic anisotropic diffusion, being this variation determined by the defect dipole tensors' symmetry in the equilibrium and saddle point configurations. Also, the point defect diffusion equations to sinks, like edge dislocations and spherical cavities, are solved and the sink strengths are calculated. The conclusion is that the dynamics of the interaction between defects and sinks is controlled by the changes in diffusivity induced by stress fields. (Author) [es

  18. Genetics Home Reference: abdominal wall defect

    Science.gov (United States)

    ... are two main types of abdominal wall defects: omphalocele and gastroschisis . Omphalocele is an opening in the center of the ... covering the exposed organs in gastroschisis. Fetuses with omphalocele may grow slowly before birth (intrauterine growth retardation) ...

  19. Defect networks and supersymmetric loop operators

    Energy Technology Data Exchange (ETDEWEB)

    Bullimore, Mathew [Perimeter Institute for Theoretical Physics, 31 Caroline Street North, Waterloo, ON N2L 2Y5 (Canada)

    2015-02-10

    We consider topological defect networks with junctions in A{sub N−1} Toda CFT and the connection to supersymmetric loop operators in N=2 theories of class S on a four-sphere. Correlation functions in the presence of topological defect networks are computed by exploiting the monodromy of conformal blocks, generalising the notion of a Verlinde operator. Concentrating on a class of topological defects in A{sub 2} Toda theory, we find that the Verlinde operators generate an algebra whose structure is determined by a set of generalised skein relations that encode the representation theory of a quantum group. In the second half of the paper, we explore the dictionary between topological defect networks and supersymmetric loop operators in the N=2{sup ∗} theory by comparing to exact localisation computations. In this context, the the generalised skein relations are related to the operator product expansion of loop operators.

  20. Elastic interaction energies of defect structures

    International Nuclear Information System (INIS)

    Seitz, E.; de Fontaine, D.

    1976-01-01

    The elastic strain energy between point defects and small disk-shaped clusters of defects are calculated to determine stable configurations. A distortion tensor of tetragonal symmetry is assigned to each impurity atom. The tetragonality ratio t is varied to cover needle-type (t greater than 1), spherical (t = 1) and disk-type (t less than 0) strain fields. To vary the elastic properties of the host material, Fe, Cu, Al, and V were chosen as examples. Computer calculations are based on the microscopic theory of elasticity which emphasizes calculations in discrete Fourier space. Pairs of point defects order along [001] for t less than 1 and along (001) for t = 1 for all host elements. For t greater than 1 fcc lattices and bcc lattices behave differently. It is shown that only certain three dimensional periodic arrangements of parallel and perpendicular disk-like defect clusters are realized for given tetragonality ratio t and host element

  1. Residual Defect Density in Random Disks Deposits.

    Science.gov (United States)

    Topic, Nikola; Pöschel, Thorsten; Gallas, Jason A C

    2015-08-03

    We investigate the residual distribution of structural defects in very tall packings of disks deposited randomly in large channels. By performing simulations involving the sedimentation of up to 50 × 10(9) particles we find all deposits to consistently show a non-zero residual density of defects obeying a characteristic power-law as a function of the channel width. This remarkable finding corrects the widespread belief that the density of defects should vanish algebraically with growing height. A non-zero residual density of defects implies a type of long-range spatial order in the packing, as opposed to only local ordering. In addition, we find deposits of particles to involve considerably less randomness than generally presumed.

  2. International conference on defects in insulating crystals

    Energy Technology Data Exchange (ETDEWEB)

    1977-01-01

    Short summaries of conference papers are presented. Some of the conference topics included transport properties, defect levels, superionic conductors, radiation effects, John-Teller effect, electron-lattice interactions, and relaxed excited states. (SDF)

  3. Diffuse scattering from crystals with point defects

    International Nuclear Information System (INIS)

    Andrushevsky, N.M.; Shchedrin, B.M.; Simonov, V.I.; Malakhova, L.F.

    2002-01-01

    The analytical expressions for calculating the intensities of X-ray diffuse scattering from a crystal of finite dimensions and monatomic substitutional, interstitial, or vacancy-type point defects have been derived. The method for the determination of the three-dimensional structure by experimental diffuse-scattering data from crystals with point defects having various concentrations is discussed and corresponding numerical algorithms are suggested

  4. [SOX2 defect and anophthalmia and microphthalmia].

    Science.gov (United States)

    Ye, Fu-xiang; Fan, Xian-qun

    2012-11-01

    As a severe congenital developmental disorder, anophthalmia and microphthalmia are usually accompanied with vision impairment and hypoevolutism of the orbit in the affected side. Many genes are involved in anophthalmia and microphthalmia, in which, SOX2 is an important one. The defect of SOX2 causes multiple system disorders, including anophthalmia and microphthalmia. We describe the relationship between the SOX2 defect and anophthalmia/microphthalmia, in order to offer some proposals for the differential diagnosis, treatment and research of anophthalmia and microphthalmia.

  5. Virtues and defects of peruvians colonial heritage

    OpenAIRE

    León, Ramón

    2014-01-01

    This communication reports a study in 691 students (414 women, 277 men, 16-60 years old), who were asked to rate (on a scale of 0 to 4) ten virtues and ten defects of an average Peruvian. The virtues considered were hard-working, honest, enterprising, ambitious, thrifty, sympathetic, creative, tidy, proud, and wel.organized; the defects were lazy, corrupt, conformist, fatalist, spendthrift, individualist, passive, envious, inhibited, talkative. They were asked too to rate the influence of col...

  6. Radioactive fallout and neural tube defects

    Directory of Open Access Journals (Sweden)

    Nejat Akar

    2015-10-01

    Full Text Available Possible link between radioactivity and the occurrence of neural tube defects is a long lasting debate since the Chernobyl nuclear fallout in 1986. A recent report on the incidence of neural defects in the west coast of USA, following Fukushima disaster, brought another evidence for effect of radioactive fallout on the occurrence of NTD’s. Here a literature review was performed focusing on this special subject.

  7. Dural sinus filling defect: intrasigmoid encephalocele

    Science.gov (United States)

    Karatag, Ozan; Cosar, Murat; Kizildag, Betul; Sen, Halil Murat

    2013-01-01

    Filling defects of dural venous sinuses are considered to be a challenging problem especially in case of symptomatic patients. Many lesions have to be ruled out such as sinus thrombosis, arachnoid granulations and tumours. Encephalocele into dural sinus is also a rare cause of these filling defects of dural sinuses. Here, we report an extremely rare case with spontaneous occult invagination of temporal brain tissue into the left sigmoid sinus and accompanying cerebellar ectopia. PMID:24311424

  8. Defect core detection in radiata pine logs

    International Nuclear Information System (INIS)

    Wallace, G.

    1993-01-01

    Internal defect cores in Pinus radiata logs arise primarily from the practice in New Zealand of pruning trees to increase the amount of clear wood. Realising the benefits of this practice when milling the logs is hampered by the lack of a practical method for detecting the defect cores. This report attempts to establish industry requirements for detections and examine techniques which may be suitable. Some trials of a novel technique are described. (author) 19 refs.; 11 figs

  9. EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

    Energy Technology Data Exchange (ETDEWEB)

    Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth; Mochi, Iacopp; Gullikson, Eric M.

    2009-08-01

    Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

  10. Characterization of lacunar defects by positrons annihilation

    International Nuclear Information System (INIS)

    Barthe, M.F.; Corbel, C.; Blondiaux, G.

    2003-01-01

    Among the nondestructive methods for the study of matter, the positrons annihilation method allows to sound the electronic structure of materials by measuring the annihilation characteristics. These characteristics depend on the electronic density as seen by the positon, and on the electron momentums distribution which annihilate with the positon. The positon is sensible to the coulombian potential variations inside a material and sounds preferentially the regions away from nuclei which represent potential wells. The lacunar-type defects (lack of nuclei) represent deep potential wells which can trap the positon up to temperatures close to the melting. This article describes the principles of this method and its application to the characterization of lacunar defects: 1 - positrons: matter probes (annihilation of electron-positon pairs, annihilation characteristics, positrons sources); 2 - positrons interactions in solids (implantation profiles, annihilation states, diffusion and trapping, positon lifetime spectrum: evolution with the concentration of defects); 3 - measurement of annihilation characteristics with two gamma photons (lifetime spectroscopy with the β + 22 Na isotope, spectroscopy of Doppler enlargement of the annihilation line); 4 - determination of the free volume of defects inside or at the surface of materials (annihilation signature in lacunar defects, lacuna, lacunar clusters and cavities, acceptors nature in semiconductors: ionic or lacunar, interface defects, precipitates in alloys); 5 - conclusions. (J.S.)

  11. Positron annihilation spectroscopy in defects of semiconductors

    CERN Document Server

    Fujinami, M

    2002-01-01

    Interaction of positron and defects, application to research of defects of semiconductor and defects on the surface of semiconductor are explained. Cz (Czochralski)-Si single crystal with 10 sup 1 sup 8 cm sup - sup 3 impurity oxygen was introduced defects by electron irradiation and the positron lifetime was measured at 90K after annealing. The defect size and recovery temperature were determined by the lifetime measurement. The distribution of defects in the depth direction is shown by S-E curve. The chemical state analysis is possible by CBS (Coincidence Doppler Broadening) spectra. The application to silicon-implanted (100 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon and oxygen-implanted (180 keV, 2x10 sup 1 sup 5 cm sup - sup 2) silicon are stated. On the oxygen-implanted silicon, the main product was V2 after implantation, V sub 6 O sub 2 at 600degC and V sub 1 sub 0 O sub 6 at 800degC. (S.Y.)

  12. Reduction in Defect Content of ODS Alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ritherdon, J

    2001-05-15

    The work detailed within this report is a continuation of earlier work carried out under contract number 1DX-SY382V. The earlier work comprises a literature review of the sources and types of defects found principally in Fe-based ODS alloys as well as experimental work designed to identify defects in the prototype ODS-Fe{sub 3}Al alloy, deduce their origins and to recommend methods of defect reduction. The present work is an extension of the experimental work already reported and concentrates on means of reduction of defects already identified rather than the search for new defect types. This report also includes results gathered during powder separation trials, conducted by the University of Groningen, Netherlands and coordinated by the University of Liverpool, involving the separation of different metallic powders in terms of their differing densities. The scope and objectives of the present work were laid out in the technical proposal ''Reduction in Defect Content in ODS Alloys-III''. All the work proposed in the ''Statement of Work'' section of the technical proposal has been carried out and all work extra to the ''Statement of Work'' falls within the context of an ODS-Fe{sub 3}Al alloy of improved overall quality and potential creep performance in the consolidated form. The outturn of the experimental work performed is reported in the following sections.

  13. Secondary defects in non-metallic solids

    International Nuclear Information System (INIS)

    Ashbee, K.H.G.; Hobbs, L.W.

    1977-01-01

    This paper points out features of secondary defect formation which are peculiar to non-metallic solids (excluding elemental semiconductors). Most of the materials of interest are compounds of two or more (usually more or less ionic) atomic species, and immediate consequence of which is a need to maintain both stoichiometry (or accommodate non-stoichiometry) and order. Primary defects in these solids, whether produced thermally, chemically or by irradiation, seldom are present or aggregate in exactly stoichiometric proportions, and the resulting extending defect structures can be quite distinct from those found in metallic solids. Where stoichiometry is maintained, it is often convenient to describe extended defects in terms of alterations in the arrangement of 'molecular' units. The adoption of this procedure enables several novel features of extended defect structures in non-metals to be explained. There are several ways in which a range of non-stoichiometry can be accommodated, which include structural elimination of point defects, nucleation of new coherent phases of altered stoichiometry, and decomposition. (author)

  14. Defect assessment procedures at high temperature

    International Nuclear Information System (INIS)

    Ainsworth, R.A.

    1991-01-01

    A comprehensive assessment procedure for the high-temperature response of structures is being produced. The procedure is referred to as R5 and is written as a series of step-by-step instructions in a number of volumes. This paper considers in detail those parts of R5 which address the behaviour of defects. The defect assessment procedures may be applied to defects found in service, postulated defects, or defects formed during operation as a result of creep-fatigue loading. In the last case, a method is described for deducing from endurance data the number of cycles to initiate a crack of a specified size. Under steady loading, the creep crack tip parameter C * is used to assess crack growth. Under cyclic loading, the creep crack growth during dwell periods is stiell governed by C * but crack growth due to cyclic excursions must also be included. This cyclic crack growth is described by an effective stress intensity factor range. A feature of the R5 defect assessment procedures in that they are based on simplified methods and approximate reference stress methods are described which enable C * in a component to be evaluated. It is shown by comparison with theoretical calculations and experimental data that reliable estimates of C * and the associated crack growth are obtained provided realistic creep strain rate date are used in the reference stress approximation. (orig./HP)

  15. Congenital heart defects in Williams syndrome.

    Science.gov (United States)

    Yuan, Shi-Min

    2017-01-01

    Yuan SM. Congenital heart defects in Williams syndrome. Turk J Pediatr 2017; 59: 225-232. Williams syndrome (WS), also known as Williams-Beuren syndrome, is a rare genetic disorder involving multiple systems including the circulatory system. However, the etiologies of the associated congenital heart defects in WS patients have not been sufficiently elucidated and represent therapeutic challenges. The typical congenital heart defects in WS were supravalvar aortic stenosis, pulmonary stenosis (both valvular and peripheral), aortic coarctation and mitral valvar prolapse. The atypical cardiovascular anomalies include tetralogy of Fallot, atrial septal defects, aortic and mitral valvular insufficiencies, bicuspid aortic valves, ventricular septal defects, total anomalous pulmonary venous return, double chambered right ventricle, Ebstein anomaly and arterial anomalies. Deletion of the elastin gene on chromosome 7q11.23 leads to deficiency or abnormal deposition of elastin during cardiovascular development, thereby leading to widespread cardiovascular abnormalities in WS. In this article, the distribution, treatment and surgical outcomes of typical and atypical cardiac defects in WS are discussed.

  16. A novel inspection system for cosmetic defects

    Science.gov (United States)

    Hazra, S.; Roy, R.; Williams, D.; Aylmore, R.; Hollingdale, D.

    2013-12-01

    The appearance of automotive skin panels creates desirability for a product and differentiates it from the competition. Because of the importance of skin panels, considerable care is taken in minimizing defects such as the 'hollow' defect that occur around door-handle depressions. However, the inspection process is manual, subjective and time-consuming. This paper describes the development of an objective and inspection scheme for the 'hollow' defect. In this inspection process, the geometry of a panel is captured using a structured lighting system. The geometry data is subsequently analyzed by a purpose-built wavelet-based algorithm to identify the location of any defects that may be present and to estimate the perceived severity of the defects without user intervention. This paper describes and critically evaluates the behavior of this physically-based algorithm on an ideal and real geometry and compares its result to an actual audit. The results show that the algorithm is capable of objectively locating and classifying 'hollow' defects in actual panels.

  17. Influence of chemical disorder on energy dissipation and defect evolution in concentrated solid solution alloys

    International Nuclear Information System (INIS)

    Zhang, Yanwen; Wang, Lumin; Caro, Alfredo; Weber, William J.; Univ. of Tennessee, Knoxville, TN

    2015-01-01

    A long-standing objective in materials research is to understand how energy is dissipated in both the electronic and atomic subsystems in irradiated materials, and how related non-equilibrium processes may affect defect dynamics and microstructure evolution. Here we show that alloy complexity in concentrated solid solution alloys having both an increasing number of principal elements and altered concentrations of specific elements can lead to substantial reduction in the electron mean free path and thermal conductivity, which has a significant impact on energy dissipation and consequentially on defect evolution during ion irradiation. Enhanced radiation resistance with increasing complexity from pure nickel to binary and to more complex quaternary solid solutions is observed under ion irradiation up to an average damage level of 1 displacement per atom. Understanding how materials properties can be tailored by alloy complexity and their influence on defect dynamics may pave the way for new principles for the design of radiation tolerant structural alloys

  18. Influence of defect mobility on electrostrain in acceptor-doped Ba0.80Sr0.20TiO3

    Directory of Open Access Journals (Sweden)

    K. Vani

    2012-12-01

    Full Text Available This study reports significant differences in the defect-mediated electrostrain in B-site trivalent ions (Fe3+ and Mn3+ doped Barium titanate based system. Electron Paramagnetic Resonance (EPR Spectroscopy has been employed as a structural probe for understanding the symmetry of defects. Differences in the reorientation of the defect dipoles have been correlated with the electrostrain. Mechanism for the higher strain in Mn-doped system has also been explained.

  19. Influence of defect mobility on electrostrain in acceptor-doped Ba{sub 0.80}Sr{sub 0.20}TiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Vani, K.; Kumar, Viswanathan, E-mail: vkumar10@yahoo.com [Center for Materials for Electronics Technology, Scientific Society, Department of Information Technology, Ministry of Communications and Information Technology, Government of India, Thrissur 680 581, Kerala (India)

    2012-12-15

    This study reports significant differences in the defect-mediated electrostrain in B-site trivalent ions (Fe{sup 3+} and Mn{sup 3+}) doped Barium titanate based system. Electron Paramagnetic Resonance (EPR) Spectroscopy has been employed as a structural probe for understanding the symmetry of defects. Differences in the reorientation of the defect dipoles have been correlated with the electrostrain. Mechanism for the higher strain in Mn-doped system has also been explained.

  20. Multiscale crystal defect dynamics: A coarse-grained lattice defect model based on crystal microstructure

    Science.gov (United States)

    Lyu, Dandan; Li, Shaofan

    2017-10-01

    Crystal defects have microstructure, and this microstructure should be related to the microstructure of the original crystal. Hence each type of crystals may have similar defects due to the same failure mechanism originated from the same microstructure, if they are under the same loading conditions. In this work, we propose a multiscale crystal defect dynamics (MCDD) model that models defects by considering its intrinsic microstructure derived from the microstructure or material genome of the original perfect crystal. The main novelties of present work are: (1) the discrete exterior calculus and algebraic topology theory are used to construct a scale-up (coarse-grained) dual lattice model for crystal defects, which may represent all possible defect modes inside a crystal; (2) a higher order Cauchy-Born rule (up to the fourth order) is adopted to construct atomistic-informed constitutive relations for various defect process zones, and (3) an hierarchical strain gradient theory based finite element formulation is developed to support an hierarchical multiscale cohesive (process) zone model for various defects in a unified formulation. The efficiency of MCDD computational algorithm allows us to simulate dynamic defect evolution at large scale while taking into account atomistic interaction. The MCDD model has been validated by comparing of the results of MCDD simulations with that of molecular dynamics (MD) in the cases of nanoindentation and uniaxial tension. Numerical simulations have shown that MCDD model can predict dislocation nucleation induced instability and inelastic deformation, and thus it may provide an alternative solution to study crystal plasticity.

  1. Ab initio study of native defects in SnO under strain

    KAUST Repository

    Bianchi Granato, Danilo; Albar, Arwa; Schwingenschlö gl, Udo

    2014-01-01

    Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent electronics. To this end, it is necessary to understand the behaviour of defects in order to control them. We use density functional theory to study

  2. Dynamic Wheel/Rail Rolling Contact at Singular Defects with Application to Squats

    NARCIS (Netherlands)

    Zhao, X.

    2012-01-01

    Squats, as a kind of short wavelength rail surface defects, have become one of the main rolling contact fatigue problems in railways worldwide. The purpose of this work is to better understand the squatting phenomenon, contribute to reduction and even prevention of squat occurrence, and thereby

  3. Angle-Beam Shear Wave Scattering from Buried Crack-like Defects in Bonded Specimens (Postprint)

    Science.gov (United States)

    2017-02-01

    defects: such as understanding the scattering behavior of fatigue cracks emanating from fastener holes in aluminum structural components [2]. Angle...Ultrasonic NDE techniques using angle-beam wedges coupled to PZT transducers have also been utilized in measuring the depth of surface-breaking cracks

  4. Elimination of defects in plasma polymerized films used in laser fusion targets

    International Nuclear Information System (INIS)

    Letts, S.A.; Johnson, W.L.; Myers, D.W.; Illige, J.D.; Lorensen, L.E.; Hatcher, C.W.

    1979-01-01

    This study was conducted to understand and control the parameters governing the formation of defects in plasma polymerized surfaces. An inductively-coupled discharge was used as the source of activated monomer. Four types of well characterized surface irregularities were produced on glass slides which were subsequently fluorocarbon coated. Optimization of the process variables is discussed

  5. Measurement Variability of Vertical Scanning Interferometry Tool Used for Orbiter Window Defect Assessment

    Science.gov (United States)

    Padula, Santo, II

    2009-01-01

    The ability to sufficiently measure orbiter window defects to allow for window recertification has been an ongoing challenge for the orbiter vehicle program. The recent Columbia accident has forced even tighter constraints on the criteria that must be met in order to recertify windows for flight. As a result, new techniques are being investigated to improve the reliability, accuracy and resolution of the defect detection process. The methodology devised in this work, which is based on the utilization of a vertical scanning interferometric (VSI) tool, shows great promise for meeting the ever increasing requirements for defect detection. This methodology has the potential of a 10-100 fold greater resolution of the true defect depth than can be obtained from the currently employed micrometer based methodology. An added benefit is that it also produces a digital elevation map of the defect, thereby providing information about the defect morphology which can be utilized to ascertain the type of debris that induced the damage. However, in order to successfully implement such a tool, a greater understanding of the resolution capability and measurement repeatability must be obtained. This work focused on assessing the variability of the VSI-based measurement methodology and revealed that the VSI measurement tool was more repeatable and more precise than the current micrometer based approach, even in situations where operator variation could affect the measurement. The analysis also showed that the VSI technique was relatively insensitive to the hardware and software settings employed, making the technique extremely robust and desirable

  6. Defecting or not defecting: how to "read" human behavior during cooperative games by EEG measurements.

    Directory of Open Access Journals (Sweden)

    Fabrizio De Vico Fallani

    2010-12-01

    Full Text Available Understanding the neural mechanisms responsible for human social interactions is difficult, since the brain activities of two or more individuals have to be examined simultaneously and correlated with the observed social patterns. We introduce the concept of hyper-brain network, a connectivity pattern representing at once the information flow among the cortical regions of a single brain as well as the relations among the areas of two distinct brains. Graph analysis of hyper-brain networks constructed from the EEG scanning of 26 couples of individuals playing the Iterated Prisoner's Dilemma reveals the possibility to predict non-cooperative interactions during the decision-making phase. The hyper-brain networks of two-defector couples have significantly less inter-brain links and overall higher modularity--i.e., the tendency to form two separate subgraphs--than couples playing cooperative or tit-for-tat strategies. The decision to defect can be "read" in advance by evaluating the changes of connectivity pattern in the hyper-brain network.

  7. The nature of strength enhancement and weakening by pentagon-heptagon defects in graphene.

    Science.gov (United States)

    Wei, Yujie; Wu, Jiangtao; Yin, Hanqing; Shi, Xinghua; Yang, Ronggui; Dresselhaus, Mildred

    2012-09-01

    The two-dimensional crystalline structures in graphene challenge the applicability of existing theories that have been used for characterizing its three-dimensional counterparts. It is crucial to establish reliable structure-property relationships in the important two-dimensional crystals to fully use their remarkable properties. With the success in synthesizing large-area polycrystalline graphene, understanding how grain boundaries (GBs) in graphene alter its physical properties is of both scientific and technological importance. A recent work showed that more GB defects could counter intuitively give rise to higher strength in tilt GBs (ref. 10). We show here that GB strength can either increase or decrease with the tilt, and the behaviour can be explained well by continuum mechanics. It is not just the density of defects that affects the mechanical properties, but the detailed arrangements of defects are also important. The strengths of tilt GBs increase as the square of the tilt angles if pentagon-heptagon defects are evenly spaced, and the trend breaks down in other cases. We find that mechanical failure always starts from the bond shared by hexagon-heptagon rings. Our present work provides fundamental guidance towards understanding how defects interact in two-dimensional crystals, which is important for using high-strength and stretchable graphene for biological and electronic applications.

  8. Time and temperature dependence of cascade induced defect production in in situ experiments and computer simulation

    International Nuclear Information System (INIS)

    Ishino, Shiori

    1993-01-01

    Understanding of the defect production and annihilation processes in a cascade is important in modelling of radiation damage for establishing irradiation correlation. In situ observation of heavy ion radiation damage has a great prospect in this respect. Time and temperature dependence of formation and annihilation of vacancy clusters in a cascade with a time resolution of 30 ms has been studied with a facility which comprises a heavy ion accelerator and an electron microscope. Formation and annihilation rates of defect clusters have been separately measured by this technique. The observed processes have been analysed by simple kinetic equations, taking into account the sink effect of surface and the defect clusters themselves together with the annihilation process due to thermal emission of vacancies from the defect clusters. Another tool to study time and temperature dependence of defect production in a cascade is computer simulation. Recent results of molecular dynamics calculations on the temperature dependence of cascade evolution are presented, including directional and temperature dependence of the lengths of replacement collision sequences, temperature dependence of the process to reach thermal equilibrium and so on. These results are discussed under general time frame of radiation damage evolution covering from 10 -15 to 10 9 s, and several important issues for the general understanding have been identified. (orig.)

  9. Non-Destructive Evaluation of Kissing Bonds using Local Defect Resonance (LDR) Spectroscopy: A Simulation Study

    Science.gov (United States)

    Delrue, S.; Tabatabaeipour, M.; Hettler, J.; Van Den Abeele, K.

    With the growing demand from industry to optimize and further develop existing Non-Destructive Testing & Evaluation (NDT&E) techniques or new methods to detect and characterize incipient damage with high sensitivity and increased quality, ample efforts have been devoted to better understand the typical behavior of kissing bonds, such as delaminations and cracks. Recently, it has been shown experimentally that the nonlinear ultrasonic response of kissing bonds could be enhanced by using Local Defect Resonance (LDR) spectroscopy. LDR spectroscopy is an efficient NDT technique that takes advantage of the characteristic fre- quencies of the defect (defect resonances) in order to provide maximum acoustic wave-defect interaction. In fact, for nonlinear methodologies, the ultrasonic excitation of the sample should occur at either multiples or integer ratios of the characteristic defect resonance frequencies, in order to obtain the highest signal-to-noise response in the nonlinear LDR spectroscopy. In this paper, the potential of using LDR spectroscopy for the detection, localization and characterization of kissing bonds is illustrated using a 3D simulation code for elastic wave propagation in materials containing closed but dynamically active cracks or delaminations. Using the model, we are able to define an appropriate method, based on the Scaling Subtraction Method (SSM), to determine the local defect resonance frequencies of a delamination in a composite plate and to illustrate an increase in defect nonlinearity due to LDR. The simulation results will help us to obtain a better understanding of the concept of LDR and to assist in the further design and testing of LDR spectroscopy for the detection, localization and characterization of kissing bonds.

  10. Analysis of CFRP Joints by Means of T-Pull Mechanical Test and Ultrasonic Defects Detection

    Directory of Open Access Journals (Sweden)

    Caterina Casavola

    2018-04-01

    Full Text Available Defects detection within a composite component, with the aim of understanding and predicting its mechanical behavior, is of great importance in the aeronautical field because the irregularities of the composite material could compromise functionality. The aim of this paper is to detect defects by means of non-destructive testing (NDT on T-pull samples made by carbon fiber reinforced polymers (CFRP and to evaluate their effect on the mechanical response of the material. Samples, obtained from an industrial stringer having an inclined web and realized with a polymeric filler between cap and web, were subjected to ultrasonic monitoring and then to T-pull mechanical tests. All samples were tested with the same load mode and the same test configuration. An experimental set-up consisting of a semiautomatic C-scan ultrasonic mapping system with a phased array probe was designed and developed, optimizing control parameters and implementing image processing software. The present work is carried out on real composites parts that are characterized by having their intrinsic defectiveness, as opposed to the previous similar results in the literature mainly obtained on composite parts with artificially produced defects. In fact, although samples under study were realized free from defects, ultrasonic mapping found defectiveness inside the material. Moreover, the ultrasonic inspection could be useful in detecting both the location and size of defects. Experimental data were critically analyzed and qualitatively correlated with results of T-pull mechanical tests in order to better understand and explain mechanical behavior in terms of fracture mode.

  11. Logistic planning and control of reworking perishable production defectives

    NARCIS (Netherlands)

    R.H. Teunter (Ruud); S.D.P. Flapper

    2001-01-01

    textabstractWe consider a production line that is dedicated to a single product. Produced lots may be non-defective, reworkable defective, or non-reworkable defective. The production line switches between production and rework. After producing a fixed number (N) of lots, all reworkable defective

  12. Channeling studies of impurity-defect interactions in silicon

    International Nuclear Information System (INIS)

    Wiggers, L.W.

    1978-01-01

    This thesis deals with the mechanism of defect production and interaction of introduced defects with impurity atoms in silicon single crystals. Defects are created by irradiation with energetic light particles (.2 - 3 MeV H + or He + ions). Mostly simple defects like vacancies and interstitials are produced during bombardment. (Auth.)

  13. Congenital heart defects and extracardiac malformations.

    Science.gov (United States)

    Rosa, Rosana Cardoso M; Rosa, Rafael Fabiano M; Zen, Paulo Ricardo G; Paskulin, Giorgio Adriano

    2013-06-01

    To review the association between congenital heart defects and extracardiac malformations. Scientific articles were searched in the Medline, Lilacs, and SciELO databases, using the descriptors "congenital heart disease," "congenital heart defects," "congenital cardiac malformations," "extracardiac defects," and "extracardiac malformations." All case series that specifically explored the association between congenital heart defects and extracardiac malformations were included. Congenital heart diseases are responsible for about 40% of birth defects, being one of the most common and severe malformations. Extracardiac malformations are observed in 7 to 50% of the patients with congenital heart disease, bringing a greater risk of comorbidity and mortality and increasing the risks related to heart surgery. Different studies have attempted to assess the presence of extracardiac abnormalities in patients with congenital heart disease. Among the changes described, those of the urinary tract are more often reported. However, no study has evaluated all patients in the same way. Extracardiac abnormalities are frequent among patients with congenital heart disease, and patients with these alterations may present an increased risk of morbimortality. Therefore, some authors have been discussing the importance and cost-effectiveness of screening these children for other malformations by complementary exams.

  14. Ultrasonic NDE Simulation for Composite Manufacturing Defects

    Science.gov (United States)

    Leckey, Cara A. C.; Juarez, Peter D.

    2016-01-01

    The increased use of composites in aerospace components is expected to continue into the future. The large scale use of composites in aerospace necessitates the development of composite-appropriate nondestructive evaluation (NDE) methods to quantitatively characterize defects in as-manufactured parts and damage incurred during or post manufacturing. Ultrasonic techniques are one of the most common approaches for defect/damage detection in composite materials. One key technical challenge area included in NASA's Advanced Composite's Project is to develop optimized rapid inspection methods for composite materials. Common manufacturing defects in carbon fiber reinforced polymer (CFRP) composites include fiber waviness (in-plane and out-of-plane), porosity, and disbonds; among others. This paper is an overview of ongoing work to develop ultrasonic wavefield based methods for characterizing manufacturing waviness defects. The paper describes the development and implementation of a custom ultrasound simulation tool that is used to model ultrasonic wave interaction with in-plane fiber waviness (also known as marcelling). Wavefield data processing methods are applied to the simulation data to explore possible routes for quantitative defect characterization.

  15. Color Vision Defects in School Going Children

    Directory of Open Access Journals (Sweden)

    R K Shrestha

    2010-12-01

    Full Text Available Introduction: Color Vision defect can be observed in various diseases of optic nerve and retina and also a significant number of people suffer from the inherited condition of red and green color defect. Methods: A cross-sectional descritptive study was designed with purposive sampling of students from various schools of Kathmandu Valley. All children were subjected to color vision evaluation using Ishihara Isochromatic color plates along with other examination to rule out any other causes of color deficiency. Results: A total of 2001 students were examined, 1050 male students and 951 females with mean age of 10.35 (±2.75 and 10.54 (±2.72 respectively. Among the total students examined, 2.1% had some form of color vision defects. Of the male population , 3.9% had color vision defects while none of the female was found with the deficiency. Conclusions: The prelevance of color vision defect in Nepal is significant and comparable with the prelevance quoted in the studies from different countries. Keywords:color vision; congenital red green color effect; Nepal; prevalence.

  16. Imaging active topological defects in carbon nanotubes

    Science.gov (United States)

    Suenaga, Kazu; Wakabayashi, Hideaki; Koshino, Masanori; Sato, Yuta; Urita, Koki; Iijima, Sumio

    2007-06-01

    A single-walled carbon nanotube (SWNT) is a wrapped single graphene layer, and its plastic deformation should require active topological defects-non-hexagonal carbon rings that can migrate along the nanotube wall. Although in situ transmission electron microscopy (TEM) has been used to examine the deformation of SWNTs, these studies deal only with diameter changes and no atomistic mechanism has been elucidated experimentally. Theory predicts that some topological defects can form through the Stone-Wales transformation in SWNTs under tension at 2,000 K, and could act as a dislocation core. We demonstrate here, by means of high-resolution (HR)-TEM with atomic sensitivity, the first direct imaging of pentagon-heptagon pair defects found in an SWNT that was heated at 2,273 K. Moreover, our in situ HR-TEM observation reveals an accumulation of topological defects near the kink of a deformed nanotube. This result suggests that dislocation motions or active topological defects are indeed responsible for the plastic deformation of SWNTs.

  17. Defect kinetics in novel detector materials

    CERN Document Server

    MacEvoy, B C

    2000-01-01

    Silicon particle detectors will be used extensively in experiments at the CERN Large Hadron Collider, where unprecedented particle fluences will cause significant atomic displacement damage. We present a model of the evolution of defect concentrations and consequent electrical behaviour in "novel" detector materials with various oxygen and carbon impurity concentrations. The divacancy-oxygen (V/sub 2/O) defect is identified as the cause of changes in device characteristics during /sup 60/Co gamma irradiation. In the case of hadron irradiation changes in detector doping concentration (N/sub eff/) are dominated by cluster defects, in particular the divacancy (V/sub 2/), which exchange charge directly via a non-Shockley-Read- Hall mechanism. The V/sub 2/O defect also contributes to Ne/sub eff/. This defect is more copiously produced during 24 GeV/c proton irradiation than during 1 MeV neutron irradiation on account of the higher vacancy introduction rate, hence the radiation hardness of materials is more sensiti...

  18. Associations between maternal periconceptional exposure to secondhand tobacco smoke and major birth defects.

    Science.gov (United States)

    Hoyt, Adrienne T; Canfield, Mark A; Romitti, Paul A; Botto, Lorenzo D; Anderka, Marlene T; Krikov, Sergey V; Tarpey, Morgan K; Feldkamp, Marcia L

    2016-11-01

    isolated and total case groups for various sources of exposure (household only; workplace/school only; household and workplace/school; household or workplace/school). The prevalence of secondhand smoke exposure only across all sources ranged from 12.9-27.8% for cases and 14.5-15.8% for controls. The adjusted odds ratios for any vs no secondhand smoke exposure in the household or workplace/school and isolated birth defects were significantly elevated for neural tube defects (anencephaly: adjusted odds ratio, 1.66; 95% confidence interval, 1.22-2.25; and spina bifida: adjusted odds ratio, 1.49; 95% confidence interval, 1.20-1.86); orofacial clefts (cleft lip without cleft palate: adjusted odds ratio, 1.41; 95% confidence interval, 1.10-1.81; cleft lip with or without cleft palate: adjusted odds ratio, 1.24; 95% confidence interval, 1.05-1.46; cleft palate alone: adjusted odds ratio, 1.31; 95% confidence interval, 1.06-1.63); bilateral renal agenesis (adjusted odds ratio, 1.99; 95% confidence interval, 1.05-3.75); amniotic band syndrome-limb body wall complex (adjusted odds ratio, 1.66; 95% confidence interval, 1.10-2.51); and atrial septal defects, secundum (adjusted odds ratio, 1.37; 95% confidence interval, 1.09-1.72). There were no significant inverse associations observed. Additional studies replicating the findings are needed to better understand the moderate positive associations observed between periconceptional secondhand smoke and several birth defects in this analysis. Increased odds ratios resulting from chance (eg, multiple comparisons) or recall bias cannot be ruled out. Copyright © 2016 Elsevier Inc. All rights reserved.

  19. Vibration of carbon nanotubes with defects: order reduction methods

    Science.gov (United States)

    Hudson, Robert B.; Sinha, Alok

    2018-03-01

    Order reduction methods are widely used to reduce computational effort when calculating the impact of defects on the vibrational properties of nearly periodic structures in engineering applications, such as a gas-turbine bladed disc. However, despite obvious similarities these techniques have not yet been adapted for use in analysing atomic structures with inevitable defects. Two order reduction techniques, modal domain analysis and modified modal domain analysis, are successfully used in this paper to examine the changes in vibrational frequencies, mode shapes and mode localization caused by defects in carbon nanotubes. The defects considered are isotope defects and Stone-Wales defects, though the methods described can be extended to other defects.

  20. Evolution of Radiation Induced Defects in SiC: A Multiscale Simulation Approach

    Science.gov (United States)

    Jiang, Hao

    Because of various excellent properties, SiC has been proposed for many applications in nuclear reactors including cladding layers in fuel rod, fission products container in TRISO fuel, and first wall/blanket in magnetic controlled fusion reactors. Upon exposure to high energy radiation environments, point defects and defect clusters are generated in materials in amounts significantly exceeding their equilibrium concentrations. The accumulation of defects can lead to undesired consequences such as crystalline-to-amorphous transformation1, swelling, and embrittlement, and these phenomena can adversely affect the lifetime of SiC based components in nuclear reactors. It is of great importance to understand the accumulation process of these defects in order to estimate change in properties of this material and to design components with superior ability to withstand radiation damages. Defect clusters are widely in SiC irradiated at the operation temperatures of various reactors. These clusters are believed to cause more than half of the overall swelling of irradiated SiC and can potentially lead to lowered thermal conductivity and mechanical strength. It is critical to understand the formation and growth of these clusters. Diffusion of these clusters is one importance piece to determine the growth rate of clusters; however it is unclear so far due to the challenges in simulating rare events. Using a combination of kinetic Activation Relaxation Technique with empirical potential and ab initio based climbing image nudged elastic band method, I performed an extensive search of the migration paths of the most stable carbon tri-interstitial cluster in SiC. This research reveals paths with the lowest energy barriers to migration, rotation, and dissociation of the most stable cluster. Based on these energy barriers, I concluded defect clusters are thermally immobile at temperatures lower than 1500 K and can dissociate into smaller clusters and single interstitials at

  1. Entanglement entropy in integrable field theories with line defects II. Non-topological defect

    Science.gov (United States)

    Jiang, Yunfeng

    2017-08-01

    This is the second part of two papers where we study the effect of integrable line defects on bipartite entanglement entropy in integrable field theories. In this paper, we consider non-topological line defects in Ising field theory. We derive an infinite series expression for the entanglement entropy and show that both the UV and IR limits of the bulk entanglement entropy are modified by the line defect. In the UV limit, we give an infinite series expression for the coefficient in front of the logarithmic divergence and the exact defect g-function. By tuning the defect to be purely transmissive and reflective, we recover correctly the entanglement entropy of the bulk and with integrable boundary respectively.

  2. ROLE OF DATA MINING CLASSIFICATION TECHNIQUE IN SOFTWARE DEFECT PREDICTION

    OpenAIRE

    Dr.A.R.Pon Periyasamy; Mrs A.Misbahulhuda

    2017-01-01

    Software defect prediction is the process of locating defective modules in software. Software quality may be a field of study and apply that describes the fascinating attributes of software package product. The performance should be excellent with none defects. Software quality metrics are a set of software package metrics that target the standard aspects of the product, process, and project. The software package defect prediction model helps in early detection of defects and contributes to t...

  3. Vortex pinning by point defect in superconductors

    International Nuclear Information System (INIS)

    Liao Hongyin; Zhou Shiping; Du Haochen

    2003-01-01

    We apply the periodic time-dependent Ginzburg-Landau model to study vortex distribution in type-II superconductors with a point-like defect and square pinning array. A defect site will pin vortices, and a periodic pinning array with right geometric parameters, which can be any form designed in advance, shapes the vortex pattern as external magnetic field varies. The maximum length over which an attractive interaction between a pinning centre and a vortex extends is estimated to be about 6.0ξ. We also derive spatial distribution expressions for the order parameter, vector potential, magnetic field and supercurrent induced by a point defect. Theoretical results and numerical simulations are compared with each other and they are consistent

  4. Artificial defects detection and location during welding

    International Nuclear Information System (INIS)

    Asty, M.

    1978-01-01

    Welding control by acoustic emission allows defects detection as soon as they are created. Acoustic testing saves time and gives better quality assurance in the case of multiple pass welding of plates. A welded joint was performed on A533B steel plates 250 mm thick by submerged arc welding. Artificial defects were implanted to determine significative parameters of acoustic reception. In operating conditions a significant acoustic activity takes place only during welding as shown by preliminary tests. At the same time an important noise is created by the arc, scories cooling and metal solidification and cooling. These problems are solved by an original processing in time-space detecting and locating defects with a good approximation [fr

  5. Reconstruction of Facial Defect Using Deltopectoral Flap.

    Science.gov (United States)

    Aldelaimi, Tahrir N; Khalil, Afrah A

    2015-11-01

    Reconstruction of the head and neck is a challenge for otolarygology surgeons, maxillofacial surgeons as well as plastic surgeons. Defects caused by the resection and/or trauma should be closed with flaps which match in color, texture and hair bearing characteristics with the face. Deltopectoral flap is a one such flap from chest and neck skin mainly used to cover the facial defects. This study report a patient presenting with tragic Road Traffic Accident (RTA) admitted to maxillofacial surgery department at Ramadi Teaching Hospital, Anbar province, Iraq. An incision, medially based, was done and deltopectoral fascio-cutaneous flap was used for surgical exposure and closure of defects after RTA. There was no major complication. Good aesthetic and functional results were achieved. Deltopectoral flap is an excellent alternative for the reconstruction of head and neck. Harvesting and application of the flap is rapid and safe. Only a single incision is sufficient for dissection and flap elevation.

  6. Defect Proliferation in Active Nematic Suspensions

    Science.gov (United States)

    Mishra, Prashant; Bowick, Mark J.; Giomi, Luca; Marchetti, M. Cristina

    2014-03-01

    The rich structure of equilibrium nematic suspensions, with their characteristic disclination defects, is modified when active forces come into play. The uniform nematic state is known to be unstable to splay (extensile) or bend (contractile) deformations above a critical activity. At even higher activity the flow becomes oscillatory and eventually turbulent. Using hydrodynamics, we classify the active flow regimes as functions of activity and order parameter friction for both contractile and extensile systems. The turbulent regime is marked by a non-zero steady state density of mobile defect pairs. The defect density itself scales with an ``active Ericksen number,'' defined as the ratio of the rate at which activity is injected into the system to the relaxation rate of orientational deformations. The work at Syracuse University was supported by the NSF on grant DMR-1004789 and by the Syracuse Soft Matter Program.

  7. Cyanotic Congenital Heart Defects – literature review

    Directory of Open Access Journals (Sweden)

    Vlad Drăgoi

    2017-11-01

    Full Text Available Congenital heart defects are one of the most interesting and important chapters regarding abnormal fetal growth pathology. The objective of this article is to present a literature review for the main cyanotic congenital heart defects. The ones presented in the article are: tetralogy of Fallot, transposition of the great vessels, double outlet right ventricle, truncus arteriosus, total anomalous pulmonary venous circulation and additional information regarding very rare malformations such as pentalogy of Cantrell and Uhl anomaly. An early and precise identification of congenital heart defects is an important step in an accurate follow-up of a potential problematic pregnancy. Knowing the sonographic aspect, associated pathology and the current available treatment procedures are vital for the fetal outcome and for the physician to adapt the right management in every situation that might appear during the pregnancy and in the neonatal period.

  8. Lithium niobate. Defects, photorefraction and ferroelectric switching

    Energy Technology Data Exchange (ETDEWEB)

    Volk, Tatyana [Russian Academy of Sciences, Inst. for Crystallography, Moscow (Russian Federation); Woehlecke, Manfred [Osnabrueck Univ. (Germany). Fachbereich Physik

    2008-07-01

    The book presents the current state of studies of point defects, both intrinsic and extrinsic (impurities, radiation centers, etc.), in LiNbO{sub 3}. The contribution of intrinsic defects to photoinduced charge transport, i.e. to the photorefraction, is explained. The photorefractive and optical properties of LiNbO{sub 3} crystals with different stoichiometry and of those doped with so-called ''optical-damage resistant'' impurities controlling the intrinsic defect structure are described in detail. Applications included are to the problem of non-erasable recording of photorefractive holograms in LiNbO{sub 3} and the current situation of studies in the ferroelectric switching and domain structure of LiNbO{sub 3}, as well as the creation of periodically-poled structures for the optical frequency conversion. (orig.)

  9. Defect engineering of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Weber, M.H. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)], E-mail: m_weber@wsu.edu; Selim, F.A.; Solodovnikov, D.; Lynn, K.G. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)

    2008-10-31

    The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C.

  10. Defect engineering of ZnO

    International Nuclear Information System (INIS)

    Weber, M.H.; Selim, F.A.; Solodovnikov, D.; Lynn, K.G.

    2008-01-01

    The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C

  11. Laterality defects in the national birth defects prevention study 1998-2007 birth prevalence and descriptive epidemiology

    Science.gov (United States)

    Little is known epidemiologically about laterality defects. Using data from the National Birth Defects Prevention Study (NBDPS), a large multi-site case-control study of birth defects, we analyzed prevalence and selected characteristics in children born with laterality defects born from 1998 to 2007...

  12. 48 CFR 1615.407-1 - Rate reduction for defective pricing or defective cost or pricing data.

    Science.gov (United States)

    2010-10-01

    ... defective pricing or defective cost or pricing data. 1615.407-1 Section 1615.407-1 Federal Acquisition... CONTRACTING METHODS AND CONTRACT TYPES CONTRACTING BY NEGOTIATION Contract Pricing 1615.407-1 Rate reduction for defective pricing or defective cost or pricing data. The clause set forth in section 1652.215-70...

  13. 48 CFR 1652.215-70 - Rate Reduction for Defective Pricing or Defective Cost or Pricing Data.

    Science.gov (United States)

    2010-10-01

    ... Defective Pricing or Defective Cost or Pricing Data. 1652.215-70 Section 1652.215-70 Federal Acquisition... CLAUSES AND FORMS CONTRACT CLAUSES Texts of FEHBP Clauses 1652.215-70 Rate Reduction for Defective Pricing or Defective Cost or Pricing Data. As prescribed in 1615.407-1, the following clause shall be...

  14. Defect generation during solidification of aluminium foams

    International Nuclear Information System (INIS)

    Mukherjee, M.; Garcia-Moreno, F.; Banhart, J.

    2010-01-01

    The reason for the frequent occurrence of cell wall defects in metal foams was investigated. Aluminium foams often expand during solidification, a process which is referred as solidification expansion (SE). The effect of SE on the structure of aluminium foams was studied in situ by X-ray radioscopy and ex situ by X-ray tomography. A direct correlation between the magnitude of SE and the number of cell wall ruptures during SE and finally the number of defects in the solidified foams was found.

  15. DIAGNOSIS OF PITCH AND LOAD DEFECTS

    DEFF Research Database (Denmark)

    2009-01-01

    The invention relates to a method, system and computer readable code for diagnosis of pitch and/or load defects of e.g. wind turbines as well as wind turbines using said diagnosis method and/or comprising said diagnosis system.......The invention relates to a method, system and computer readable code for diagnosis of pitch and/or load defects of e.g. wind turbines as well as wind turbines using said diagnosis method and/or comprising said diagnosis system....

  16. Quantum computing with defects in diamond

    International Nuclear Information System (INIS)

    Jelezko, F.; Gaebel, T.; Popa, I.; Domhan, M.; Wittmann, C.; Wrachtrup, J.

    2005-01-01

    Full text: Single spins in semiconductors, in particular associated with defect centers, are promising candidates for practical and scalable implementation of quantum computing even at room temperature. Such an implementation may also use the reliable and well known gate constructions from bulk nuclear magnetic resonance (NMR) quantum computing. Progress in development of quantum processor based on defects in diamond will be discussed. By combining optical microscopy, and magnetic resonance techniques, the first quantum logical operations on single spins in a solid are now demonstrated. The system is perspective for room temperature operation because of a weak dependence of decoherence on temperature (author)

  17. Electronic structure of defects in semiconductor heterojunctions

    International Nuclear Information System (INIS)

    Haussy, Bernard; Ganghoffer, Jean Francois

    2002-01-01

    Full text.heterojunctions and semiconductors and superlattices are well known and well used by people interested in optoelectronics communications. Components based on the use of heterojunctions are interesting for confinement of light and increase of quantum efficiency. An heterojunction is the contact zone between two different semiconductors, for example GaAs and Ga 1-x Al x As. Superlattices are a succession of heterojunctions (up to 10 or 20). These systems have been the subjects of many experiments ao analyse the contact between semiconductors. They also have been theoretically studied by different types of approach. The main result of those studies is the prediciton of band discontinuities. Defects in heterojunctions are real traps for charge carriers; they can affect the efficiency of the component decreasing the currents and the fluxes in it. the knowledge of their electronic structure is important, a great density of defects deeply modifies the electronic structure of the whole material creating real new bands of energy in the band structure of the component. in the first part of this work, we will describe the heterostructure and the defect in terms of quantum wells and discrete levels. This approach allows us to show the role of the width of the quantum well describing the structure but induces specific behaviours due to the one dimensional modelling. Then a perturbative treatment is proposed using the Green's functions formalism. We build atomic chains with different types of atoms featuring the heterostructure and the defect. Densities of states of a structure with a defect and levels associated to the defect are obtained. Results are comparable with the free electrons work, but the modelling do not induce problems due to a one dimensional approach. To extend our modelling, a three dimensions approach, based on a cavity model, is investigated. The influence of the defect, - of hydrogenoid type - introduced in the structure, is described by a cavity

  18. Visual detection of defects in solder joints

    Science.gov (United States)

    Blaignan, V. B.; Bourbakis, Nikolaos G.; Moghaddamzadeh, Ali; Yfantis, Evangelos A.

    1995-03-01

    The automatic, real-time visual acquisition and inspection of VLSI boards requires the use of machine vision and artificial intelligence methodologies in a new `frame' for the achievement of better results regarding efficiency, products quality and automated service. In this paper the visual detection and classification of different types of defects on solder joints in PC boards is presented by combining several image processing methods, such as smoothing, segmentation, edge detection, contour extraction and shape analysis. The results of this paper are based on simulated solder defects and a real one.

  19. Gauge theory and defects in solids

    CERN Document Server

    Edelen, DGB

    2012-01-01

    This new series Mechanics and Physics of Discrete Systems aims to provide a coherent picture of the modern development of discrete physical systems. Each volume will offer an orderly perspective of disciplines such as molecular dynamics, crystal mechanics and/or physics, dislocation, etc. Emphasized in particular are the fundamentals of mechanics and physics that play an essential role in engineering applications.Volume 1, Gauge Theory and Defects in Solids, presents a detailed development of a rational theory of the dynamics of defects and damage in solids. Solutions to field e

  20. Modeling of extended defects in silicon

    International Nuclear Information System (INIS)

    Law, M.E.; Jones, K.S.; Earles, S.K.; Lilak, A.D.; Xu, J.W.

    1997-01-01

    Transient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed

  1. Defects and diffusion in semiconductors XIV

    CERN Document Server

    Fisher, David J

    2012-01-01

    This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and

  2. Point defect relaxation volumes for copper

    International Nuclear Information System (INIS)

    Miller, K.M.

    1979-11-01

    The methods used for the determination of point defect relaxation volumes are discussed and it is shown that a previous interatomic potential derived for copper is inaccurate and results obtained using it are invalid. A new interatomic potential has been produced for copper and a computer simulation of point and planar defects carried out. A vacancy relaxation volume of -0.33 atomic volumes has been found with interstitial values in the range 1.7 to 2.0 atomic volumes. It is shown that these values in current theories of irradiation induced swelling lead to an anomalously high value for dislocation bias compared with that determined experimentally. (author)

  3. Irradiation damage in boron carbide: point defects, clusters and helium bubbles

    International Nuclear Information System (INIS)

    Stoto, T.; Zuppiroli, L.

    1986-06-01

    Boron carbide is a refractory hard and light material of interest in nuclear technology (fission and also fusion). Transmission electron microscopy was used to examine the properties of radiation induced damage. Firstly, the production of point defects and their clustering was studied in samples irradiated by 1 MeV electron in a high voltage electron microscope at selected temperatures from 12 K to 1000 K. Secondly, conventional transmission electron microscopy was used to understand the production of helium bubbles in neutron irradiated boron carbide and their role in the generation of microcracks. Finally, the interaction between point defects and bubbles was also examined

  4. Effects of point defect trapping and solute segregation on irradiation-induced swelling and creep

    International Nuclear Information System (INIS)

    Mansur, L.K.

    1978-01-01

    The theory of irradiation swelling and creep, generalized to include impurity trapping of point defects and impurity-induced changes in sink efficiencies for point defects, is reviewed. The mathematical framework is developed and significant results are described. These include the relation between vacancy and interstitial trapping and the effectiveness of trapping as compared to segregation-induced changes in sink efficiencies in modifying void nucleation, void growth, and creep. Current understanding is critically assessed. Several areas requiring further development are identified. In particular those given special attention are the treatment of nondilute solutions and the consequences of current uncertainties in fundamental materials properties whose importance has been identified using the theory

  5. Optoelectronics and defect levels in hydroxyapatite by first-principles

    Science.gov (United States)

    Avakyan, Leon A.; Paramonova, Ekaterina V.; Coutinho, José; Öberg, Sven; Bystrov, Vladimir S.; Bugaev, Lusegen A.

    2018-04-01

    Hydroxyapatite (HAp) is an important component of mammal bones and teeth, being widely used in prosthetic implants. Despite the importance of HAp in medicine, several promising applications involving this material (e.g., in photo-catalysis) depend on how well we understand its fundamental properties. Among the ones that are either unknown or not known accurately, we have the electronic band structure and all that relates to it, including the bandgap width. We employ state-of-the-art methodologies, including density hybrid-functional theory and many-body perturbation theory within the dynamically screened single-particle Green's function approximation, to look at the optoelectronic properties of HAp. These methods are also applied to the calculation of defect levels. We find that the use of a mix of (semi-)local and exact exchange in the exchange-correlation functional brings a drastic improvement to the band structure. Important side effects include improvements in the description of dielectric and optical properties not only involving conduction band (excited) states but also the valence. We find that the highly dispersive conduction band bottom of HAp originates from anti-bonding σ* states along the ⋯OH-OH-⋯ infinite chain, suggesting the formation of a conductive 1D-ice phase. The choice of the exchange-correlation treatment to the calculation of defect levels was also investigated by using the OH-vacancy as a testing model. We find that donor and acceptor transitions obtained within semi-local density functional theory (DFT) differ from those of hybrid-DFT by almost 2 eV. Such a large discrepancy emphasizes the importance of using a high-quality description of the electron-electron interactions in the calculation of electronic and optical transitions of defects in HAp.

  6. Prenatal exposure to environmental factors and congenital limb defects.

    Science.gov (United States)

    Alexander, Peter G; Clark, Karen L; Tuan, Rocky S

    2016-09-01

    Limb congenital defects afflict approximately 0.6:1000 live births. In addition to genetic factors, prenatal exposure to drugs and environmental toxicants, represents a major contributing factor to limb defects. Examples of well-recognized limb teratogenic agents include thalidomide, warfarin, valproic acid, misoprostol, and phenytoin. While the mechanism by which these agents cause dymorphogenesis is increasingly clear, prediction of the limb teratogenicity of many thousands of as yet uncharacterized environmental factors (pollutants) remains inexact. This is limited by the insufficiencies of currently available models. Specifically, in vivo approaches using guideline animal models have inherently deficient predictive power due to genomic and anatomic differences that complicate mechanistic comparisons. On the other hand, in vitro two-dimensional (2D) cell cultures, while accessible for cellular and molecular experimentation, do not reflect the three-dimensional (3D) morphogenetic events in vivo nor systemic influences. More robust and accessible models based on human cells that accurately replicate specific processes of embryonic limb development are needed to enhance limb teratogenesis prediction and to permit mechanistic analysis of the adverse outcome pathways. Recent advances in elucidating mechanisms of normal development will aid in the development of process-specific 3D cell cultures within specialized bioreactors to support multicellular microtissues or organoid constructs that will lead to increased understanding of cell functions, cell-to-cell signaling, pathway networks, and mechanisms of toxicity. The promise is prompting researchers to look to such 3D microphysiological systems to help sort out complex and often subtle interactions relevant to developmental malformations that would not be evident by standard 2D cell culture testing. Birth Defects Research (Part C) 108:243-273, 2016. © 2016 Wiley Periodicals, Inc. © 2016 Wiley Periodicals, Inc.

  7. Understanding vision: students’ use of light and optics resources

    International Nuclear Information System (INIS)

    Jones, Dyan L; Zollman, Dean

    2014-01-01

    We present a qualitative study designed to examine how students construct an understanding of the human eye and vision from their knowledge of light and optics. As would be expected, vast differences are shown to exist between pre- and post-instruction students in terms of not only resource use, but also willingness to transfer their existing knowledge. However, we have found that appropriate scaffolding can facilitate resource activation and guide students to construct an understanding of vision and vision defects. (paper)

  8. Point defects and defect clusters examined on the basis of some fundamental experiments

    International Nuclear Information System (INIS)

    Zuppiroli, L.

    1975-01-01

    On progressing from the centre of the defect to the surface the theoretical approach to a point defect passes from electronic theories to elastic theory. Experiments by which the point defect can be observed fall into two categories. Those which detect long-range effects: measurement of dimensional variations in the sample; measurement of the mean crystal parameter variation; elastic X-ray scattering near the nodes of the reciprocal lattice (Huang scattering). Those which detect more local effects: low-temperature resistivity measurement; positron capture and annihilation; local scattering far from the reciprocal lattice nodes. Experiments involving both short and long-range effects can always be found. This is the case for example with the dechanneling of α particles by defects. Certain of the experimental methods quoted above apply also to the study of point defect clusters. These methods are illustrated by some of their most striking results which over the last twenty years have refined our knowledge of point defects and defect clusters: length and crystal parameter measurements; diffuse X-ray scattering; low-temperature resistivity measurements; ion emission microscopy; electron microscopy; elastoresistivity [fr

  9. Understanding of the color in composite resin

    Directory of Open Access Journals (Sweden)

    Jeong-Won Park

    2011-07-01

    Full Text Available In clinic, esthetic restoration of a defective natural tooth with composite resin is challenging procedure and needs complete understanding of the color of tooth itself and materials used. The optical characteristics of the composites are different because the chemical compositions and microstructures are not same. This review provided basic knowledge of the color and the color measurement devices, and analyze the color of the natural tooth. Further, the accuracy of the shade tab, color of the composite resins before and after curing, effect of the water, food and bleaching agent, and translucency, opalescence, and fluorescence effects were evaluated.

  10. Accurate defect die placement and nuisance defect reduction for reticle die-to-die inspections

    Science.gov (United States)

    Wen, Vincent; Huang, L. R.; Lin, C. J.; Tseng, Y. N.; Huang, W. H.; Tuo, Laurent C.; Wylie, Mark; Chen, Ellison; Wang, Elvik; Glasser, Joshua; Kelkar, Amrish; Wu, David

    2015-10-01

    Die-to-die reticle inspections are among the simplest and most sensitive reticle inspections because of the use of an identical-design neighboring-die for the reference image. However, this inspection mode can have two key disadvantages: (1) The location of the defect is indeterminate because it is unclear to the inspector whether the test or reference image is defective; and (2) nuisance and false defects from mask manufacturing noise and tool optical variation can limit the usable sensitivity. The use of a new sequencing approach for a die-to-die inspection can resolve these issues without any additional scan time, without sacrifice in sensitivity requirement, and with a manageable increase in computation load. In this paper we explore another approach for die-to-die inspections using a new method of defect processing and sequencing. Utilizing die-to-die double arbitration during defect detection has been proven through extensive testing to generate accurate placement of the defect in the correct die to ensure efficient defect disposition at the AIMS step. The use of this method maintained the required inspection sensitivity for mask quality as verified with programmed-defectmask qualification and then further validated with production masks comparing the current inspection approach to the new method. Furthermore, this approach can significantly reduce the total number of defects that need to be reviewed by essentially eliminating the nuisance and false defects that can result from a die-to-die inspection. This "double-win" will significantly reduce the effort in classifying a die-to-die inspection result and will lead to improved cycle times.

  11. Momentum conserving defects in affine Toda field theories

    Energy Technology Data Exchange (ETDEWEB)

    Bristow, Rebecca; Bowcock, Peter [Department of Mathematical Sciences, Durham University,Durham, DH1 3LE (United Kingdom)

    2017-05-30

    Type II integrable defects with more than one degree of freedom at the defect are investigated. A condition on the form of the Lagrangian for such defects is found which ensures the existence of a conserved momentum in the presence of the defect. In addition it is shown that for any Lagrangian satisfying this condition, the defect equations of motion, when taken to hold everywhere, can be extended to give a Bäcklund transformation between the bulk theories on either side of the defect. This strongly suggests that such systems are integrable. Momentum conserving defects and Bäcklund transformations for affine Toda field theories based on the A{sub n}, B{sub n}, C{sub n} and D{sub n} series of Lie algebras are found. The defect associated with the D{sub 4} affine Toda field theory is examined in more detail. In particular classical time delays for solitons passing through the defect are calculated.

  12. Simulation based mask defect repair verification and disposition

    Science.gov (United States)

    Guo, Eric; Zhao, Shirley; Zhang, Skin; Qian, Sandy; Cheng, Guojie; Vikram, Abhishek; Li, Ling; Chen, Ye; Hsiang, Chingyun; Zhang, Gary; Su, Bo

    2009-10-01

    As the industry moves towards sub-65nm technology nodes, the mask inspection, with increased sensitivity and shrinking critical defect size, catches more and more nuisance and false defects. Increased defect counts pose great challenges in the post inspection defect classification and disposition: which defect is real defect, and among the real defects, which defect should be repaired and how to verify the post-repair defects. In this paper, we address the challenges in mask defect verification and disposition, in particular, in post repair defect verification by an efficient methodology, using SEM mask defect images, and optical inspection mask defects images (only for verification of phase and transmission related defects). We will demonstrate the flow using programmed mask defects in sub-65nm technology node design. In total 20 types of defects were designed including defects found in typical real circuit environments with 30 different sizes designed for each type. The SEM image was taken for each programmed defect after the test mask was made. Selected defects were repaired and SEM images from the test mask were taken again. Wafers were printed with the test mask before and after repair as defect printability references. A software tool SMDD-Simulation based Mask Defect Disposition-has been used in this study. The software is used to extract edges from the mask SEM images and convert them into polygons to save in GDSII format. Then, the converted polygons from the SEM images were filled with the correct tone to form mask patterns and were merged back into the original GDSII design file. This merge is for the purpose of contour simulation-since normally the SEM images cover only small area (~1 μm) and accurate simulation requires including larger area of optical proximity effect. With lithography process model, the resist contour of area of interest (AOI-the area surrounding a mask defect) can be simulated. If such complicated model is not available, a simple

  13. Defects and Disorder in the Drosophila Eye

    Science.gov (United States)

    Kim, Sangwoo; Carthew, Richard; Hilgenfeldt, Sascha

    Cell division and differentiation tightly control the regular pattern in the normal eye of the Drosophila fruit fly while certain genetic mutations introduce disorder in the form of topological defects. Analyzing data from pupal retinas, we develop a model based on Voronoi construction that explains the defect statistics as a consequence of area variation of individual facets (ommatidia). The analysis reveals a previously unknown systematic long-range area variation that spans the entire eye, with distinct effects on topological disorder compared to local fluctuations. The internal structure of the ommatidia and the stiffness of their interior cells also plays a crucial role in the defect generation. Accurate predictions of the correlation between the area variation and the defect density in both normal and mutant animals are obtained without free parameters. This approach can potentially be applied to cellular systems in many other contexts to identify size-topology correlations near the onset of symmetry breaking. This work has been supported by the NIH (GM098077) and the NSF (Grant No. 1504301).

  14. Modern approach to facial skin defects reconstruction

    Directory of Open Access Journals (Sweden)

    Mateusz Kister

    2017-10-01

    Full Text Available Reconstruction of a facial defect is usually a challenging endeavor. The article aims to describe different types of flaps that might be used to restore such deformities- including their characteristics, indications and guidelines that should be followed in the reconstructive procedures.

  15. 16 CFR 1115.4 - Defect.

    Science.gov (United States)

    2010-01-01

    ... Practices CONSUMER PRODUCT SAFETY COMMISSION CONSUMER PRODUCT SAFETY ACT REGULATIONS SUBSTANTIAL PRODUCT HAZARD REPORTS General Interpretation § 1115.4 Defect. Section 15(b)(2) of the CPSA requires every manufacturer (including an importer), distributor, and retailer of a consumer product who obtains information...

  16. Maxillectomy defects: a suggested classification scheme.

    Science.gov (United States)

    Akinmoladun, V I; Dosumu, O O; Olusanya, A A; Ikusika, O F

    2013-06-01

    The term "maxillectomy" has been used to describe a variety of surgical procedures for a spectrum of diseases involving a diverse anatomical site. Hence, classifications of maxillectomy defects have often made communication difficult. This article highlights this problem, emphasises the need for a uniform system of classification and suggests a classification system which is simple and comprehensive. Articles related to this subject, especially those with specified classifications of maxillary surgical defects were sourced from the internet through Google, Scopus and PubMed using the search terms maxillectomy defects classification. A manual search through available literature was also done. The review of the materials revealed many classifications and modifications of classifications from the descriptive, reconstructive and prosthodontic perspectives. No globally acceptable classification exists among practitioners involved in the management of diseases in the mid-facial region. There were over 14 classifications of maxillary defects found in the English literature. Attempts made to address the inadequacies of previous classifications have tended to result in cumbersome and relatively complex classifications. A single classification that is based on both surgical and prosthetic considerations is most desirable and is hereby proposed.

  17. Importance of packing in spiral defect chaos

    Indian Academy of Sciences (India)

    We develop two measures to characterize the geometry of patterns exhibited by the state of spiral defect chaos, a weakly turbulent regime of Rayleigh-Bénard convection. These describe the packing of contiguous stripes within the pattern by quantifying their length and nearest-neighbor distributions. The distributions ...

  18. SCATTERING OF SPIN WAVES BY MAGNETIC DEFECTS

    Energy Technology Data Exchange (ETDEWEB)

    Callaway, Joseph

    1962-12-15

    The scattering of spin waves by magnetic point defects is considered using a Green's function method. A partial wave expansion for the scattering amplitude is derived. An expression for the cross section is determined that includes the effect of resonant states. Application is made to the calculation of the thermal conductivity of an insulating ferromagnet. (auth)

  19. The real defect and its nondestructive characterization

    International Nuclear Information System (INIS)

    Licht, H.

    1982-01-01

    Nondestructive test techniques to evaluate defect severity and component degradation are typically based on transmission of energy into the material to be inspected. The capabilities of such techniques are controlled by physical phenomena which generally do not coincide with inspection requirements. This paper reviews several recent developments (mainly in ultrasonic and eddy current testing) which highlight the state of the art

  20. Defect detection and sizing in ultrasonic imaging

    International Nuclear Information System (INIS)

    Moysan, J.; Benoist, P.; Chapuis, N.; Magnin, I.

    1991-01-01

    This paper introduces imaging processing developed with the SPARTACUS system in the field of ultrasonic testing. The aim of the imaging processing is to detect and to separate defects echoes from background noise. Image segmentation and particularities of ultrasonic images are the base of studied methods. 4 figs.; 6 refs [fr

  1. 47 CFR 25.112 - Defective applications.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Defective applications. 25.112 Section 25.112 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES SATELLITE COMMUNICATIONS... internationally for such operations under the Radio Regulations of the International Telecommunication Union. (b...

  2. Graphene defects induced by ion beam

    Science.gov (United States)

    Gawlik, Grzegorz; Ciepielewski, Paweł; Baranowski, Jacek; Jagielski, Jacek

    2017-10-01

    The CVD graphene deposited on the glass substrate was bombarded by molecular carbon ions C3+ C6+ hydrocarbon ions C3H4+ and atomic ions He+, C+, N+, Ar+, Kr+ Yb+. Size and density of ion induced defects were estimated from evolution of relative intensities of Raman lines D (∼1350 1/cm), G (∼1600 1/cm), and D‧ (∼1620 1/cm) with ion fluence. The efficiency of defect generation by atomic ions depend on ion mass and energy similarly as vacancy generation directly by ion predicted by SRIM simulations. However, efficiency of defect generation in graphene by molecular carbon ions is essentially higher than summarized efficiency of similar group of separate atomic carbon ions of the same energy that each carbon ion in a cluster. The evolution of the D/D‧ ratio of Raman lines intensities with ion fluence was observed. This effect may indicate evolution of defect nature from sp3-like at low fluence to a vacancy-like at high fluence. Observed ion graphene interactions suggest that the molecular ion interacts with graphene as single integrated object and should not be considered as a group of atomic ions with partial energy.

  3. Optical defect modes in chiral liquid crystals

    International Nuclear Information System (INIS)

    Belyakov, V. A.; Semenov, S. V.

    2011-01-01

    An analytic approach to the theory of optical defect modes in chiral liquid crystals (CLCs) is developed. The analytic study is facilitated by the choice of the problem parameters. Specifically, an isotropic layer (with the dielectric susceptibility equal to the average CLC dielectric susceptibility) sandwiched between two CLC layers is studied. The chosen model allows eliminating the polarization mixing and reducing the corresponding equations to the equations for light of diffracting polarization only. The dispersion equation relating the defect mode (DM) frequency to the isotropic layer thickness and an analytic expression for the field distribution in the DM structure are obtained and the corresponding dependences are plotted for some values of the DM structure parameters. Analytic expressions for the transmission and reflection coefficients of the DM structure (CLC-defect layer-CLC) are presented and analyzed for nonabsorbing, absorbing, and amplifying CLCs. The anomalously strong light absorption effect at the DM frequency is revealed. The limit case of infinitely thick CLC layers is considered in detail. It is shown that for distributed feedback lasing in a defect structure, adjusting the lasing frequency to the DM frequency results in a significant decrease in the lasing threshold. The DM dispersion equations are solved numerically for typical values of the relevant parameters. Our approach helps clarify the physics of the optical DMs in CLCs and completely agrees with the corresponding results of the previous numerical investigations.

  4. Investigation of defect structures in solids

    Energy Technology Data Exchange (ETDEWEB)

    Dienel, G; Hubrig, W H; Schenk, M; Syhre, H [Zentralinstitut fuer Kernforschung, Rossendorf bei Dresden (German Democratic Republic)

    1976-01-01

    Some central points of interest of research in the field of defect structures in solids dealt with at the Central Institute of Nuclear Research at Rossendorf in the last years are presented. Studies on f.c.c. and b.c.c. metals, radiation-induced phase transitions in perovskites and ion-implanted silicon are described in some detail.

  5. Dislocation defect interaction in irradiated Cu

    International Nuclear Information System (INIS)

    Schaeublin, R.; Yao, Z.; Spaetig, P.; Victoria, M.

    2005-01-01

    Pure Cu single crystals irradiated at room temperature to low doses with 590 MeV protons have been deformed in situ in a transmission electron microscope in order to identify the basic mechanisms at the origin of hardening. Cu irradiated to 10 -4 dpa shows at room temperature a yield shear stress of 13.7 MPa to be compared to the 8.8 MPa of the unirradiated Cu. Irradiation induced damage consists at 90% of 2 nm stacking fault tetrahedra, the remaining being dislocation loops and unidentified defects. In-situ deformation reveals that dislocation-defect interaction can take several forms. Usually, dislocations pinned by defects bow out under the applied stress and escape without leaving any visible defect. From the escape angles obtained at 183 K, an average critical stress of 100 MPa is deduced. In some cases, the pinning of dislocations leads to debris that are about 20 nm long, which formation could be recorded during the in situ experiment

  6. Detection and defect correction of operating process

    International Nuclear Information System (INIS)

    Vasendina, Elena; Plotnikova, Inna; Levitskaya, Anastasiya; Kvesko, Svetlana

    2016-01-01

    The article is devoted to the current problem of enterprise competitiveness rise in hard and competitive terms of business environment. The importance of modern equipment for detection of defects and their correction is explained. Production of chipboard is used as an object of research. Short description and main results of estimation efficiency of innovative solutions of enterprises are considered. (paper)

  7. 7 CFR 51.1564 - External defects.

    Science.gov (United States)

    2010-01-01

    ... FRESH FRUITS, VEGETABLES AND OTHER PRODUCTS 1,2 (INSPECTION, CERTIFICATION, AND STANDARDS) United States...) in the aggregate. Artificial Coloring When unsightly or when concealing any defect causing damage or... the surface area of the potato When its severity causes a wrinkling of the skin over more than 50...

  8. Oil defect detection of electrowetting display

    Science.gov (United States)

    Chiang, Hou-Chi; Tsai, Yu-Hsiang; Yan, Yung-Jhe; Huang, Ting-Wei; Mang, Ou-Yang

    2015-08-01

    In recent years, transparent display is an emerging topic in display technologies. Apply in many fields just like mobile device, shopping or advertising window, and etc. Electrowetting Display (EWD) is one kind of potential transparent display technology advantages of high transmittance, fast response time, high contrast and rich color with pigment based oil system. In mass production process of Electrowetting Display, oil defects should be found by Automated Optical Inspection (AOI) detection system. It is useful in determination of panel defects for quality control. According to the research of our group, we proposed a mechanism of AOI detection system detecting the different kinds of oil defects. This mechanism can detect different kinds of oil defect caused by oil overflow or material deteriorated after oil coating or driving. We had experiment our mechanism with a 6-inch Electrowetting Display panel from ITRI, using an Epson V750 scanner with 1200 dpi resolution. Two AOI algorithms were developed, which were high speed method and high precision method. In high precision method, oil jumping or non-recovered can be detected successfully. This mechanism of AOI detection system can be used to evaluate the oil uniformity in EWD panel process. In the future, our AOI detection system can be used in quality control of panel manufacturing for mass production.

  9. TRANSMISSION ION CHANNELING IMAGES OF CRYSTAL DEFECTS

    NARCIS (Netherlands)

    KING, PJC; BREESE, MBH; WILSHAW, PR; SMULDERS, PJM; GRIME, GW

    This paper demonstrates how images of crystal defects can be produced using ion channeling. A focused, scanned beam of MeV protons from the University of Oxford Nuclear Microprobe has been used. With the beam aligned with a channeling direction of the crystal, protons transmitted through the thinned

  10. Electrochemical Implications of Defects in Carbon Nanotubes

    Science.gov (United States)

    Hall, Jonathan Peter

    The electrochemical behavior of carbon nanotubes (CNTs) containing both intrinsic and extrinsically introduced defects has been investigated through the study of bamboo and hollow multi-walled CNT morphologies. The controlled addition of argon, hydrogen, and chlorine ions in addition to atomic hydrogen and magnesium vapor was used for varying the charge and type of extrinsic defects. To quantify changes in the CNTs upon treatment, Raman spectroscopy and electrochemical techniques were employed. It was indicated from Raman spectroscopy, cyclic voltammetry, electrochemical impedance spectroscopy, and chronopotentiometric experiments that the electrochemical response of hollow type CNTs could be tailored more significantly compared to bamboo type CNTs, which have innately high reactive site densities and are less amenable to modification. Total defect density and edge-plane-like defect concentrations monitored through Raman spectroscopy were used to correlate changes in the electrochemical response of the CNT electrodes as a function of treatment. The implementation of CNT electrodes in a prototypical electrolytic capacitor device was then explored and characterized. Dependencies on source current and redox couple concentration were evaluated, as well as changes in the total capacitance as a function of treatment. Cyclability studies were also performed as a function of source current magnitude to evaluate the longevity of the faradaic currents which typically decrease over time in other similar capacitors. This thesis then concludes with an overall summary of the themes and findings of the research presented in this work.

  11. Theory of defect interactions in metals

    International Nuclear Information System (INIS)

    Thetford, Roger.

    1989-09-01

    The state relaxation program DEVIL has been updated to use N-body Finnis-Sinclair potentials. Initial calculations of self-interstitial and monovacancy formation energies confirm that the modified program is working correctly. An extra repulsive pair potential (constructed to leave the original fitting unaltered) overcomes some deficiencies in the published Finnis-Sinclair potentials. The modified potentials are used to calculate interstitial energies and relaxation in the b.c.c. transition metals vanadium, niobium, tantalum, molybdenum and tungsten. Further adaptation enables DEVIL to model dislocations running parallel to any lattice vector. Periodic boundary conditions are applied in the direction of the dislocation line, giving an infinite straight dislocation. The energies per unit length of two different dislocations are compared with experiment. A study of migration of point defects in the perfect lattice provides information on the mobility of interstitials and vacancies. The total energy needed to form and migrate an interstitial is compared with that required for a vacancy. The interaction between point defects and dislocations is studied in detail. Binding energies for both self-interstitials and monovacancies at edge dislocations are calculated for the five metals. Formation energies of the point defects in the neighbourhood of the edge dislocation are calculated for niobium, and the extend of the regions from which the defects are spontaneously absorbed are found. (author)

  12. Encephalocele and associated skull defects | Komolafe | West ...

    African Journals Online (AJOL)

    The case notes of the patients with encephalocele managed over a 5 year period were reviewed and the relevant data obtained. Seventy-six percent of the patients had occipital encephalocele. The average diameter of the skull defect was 1.8cm. Only 2(9.5%) of the patients had cranioplasty. Cosmesis was acceptable to all ...

  13. Periapical multilocular osteoporotic bone marrow defect

    International Nuclear Information System (INIS)

    Jung, Yun Hoa; Cho, Bong Hae; Nah, Kyung Soo

    2005-01-01

    A case of osteoporotic bone marrow defect, which appeared as a well-defined multilocular radiolucency overlapping the roots of mandibular right second molar, was reported. On periapical radiograph, a daughter cyst-like radiolucency was seen at the anterior margin of the lesion making it difficult to rule out odontogenic keratocyst.

  14. Periapical multilocular osteoporotic bone marrow defect

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yun Hoa; Cho, Bong Hae; Nah, Kyung Soo [Pusan National University College of Medicine, Busan (Korea, Republic of)

    2005-12-15

    A case of osteoporotic bone marrow defect, which appeared as a well-defined multilocular radiolucency overlapping the roots of mandibular right second molar, was reported. On periapical radiograph, a daughter cyst-like radiolucency was seen at the anterior margin of the lesion making it difficult to rule out odontogenic keratocyst.

  15. Microsurgical reconstruction of extensive oncological scalp defects

    Directory of Open Access Journals (Sweden)

    Ole eGoertz

    2015-09-01

    Full Text Available While most small to medium defects of the scalp can be covered by local flaps, large defects or complicating factors like a history of radiotherapy often require a microsurgical reconstruction.Several factors need to be considered in such procedures. A sufficient preoperative planning is based on adequate imaging of the malignancy and a multi-disciplinary concept. Several flaps are available for such reconstructions, of which the latissimus dorsi and anterior lateral thigh flaps are the most commonly used ones.In very large defects, combined flaps such as a parascapular / latissimus dorsi flaps can be highly useful or necessary. The most commonly used recipient vessels for microsurgical scalp reconstructions are the superficial temporal vessels, but various other feasible choices exist. If the concomitant veins are not sufficient, the jugular veins represent a safe backup alternative but require a vessel interposition or long pedicle. Postoperative care and patient positioning can be difficult in these patients but can be facilitated by various devices. Overall, microsurgical reconstruction of large scalp defects is a feasible undertaking if the mentioned key factors are taken into account.

  16. Ultrasound stimulation of mandibular bone defect healing

    NARCIS (Netherlands)

    Schortinghuis, Jurjen

    2004-01-01

    The conclusions of the experimental work presented in this thesis are: 1. Low intensity pulsed ultrasound is not effective in stimulating bone growth into a rat mandibular defect, either with or without the use of osteoconductive membranes. 2. Low intensity pulsed ultrasound does not seem to have an

  17. Descriptions of positron defect analysis capabilities

    International Nuclear Information System (INIS)

    Howell, R.H.

    1994-10-01

    A series of descriptive papers and graphics appropriate for distribution to potential collaborators has been assembled. These describe the capabilities for defect analysis using positron annihilation spectroscopy. The application of positrons to problems in the polymer and semiconductor industries is addressed

  18. Building defects in Danish construction: project characteristics influencing the occurrence of defects at handover

    DEFF Research Database (Denmark)

    Schultz, Casper Siebken; Jørgensen, Kirsten; Bonke, Sten

    2015-01-01

    Defects in construction have gained much attention from both the public and academia. Danish construction is no exception and a number of political initiatives have been established to address the unsatisfying amounts of defects. One of the political initiatives, benchmarking, collects and provides...... those with many and/or serious defects. The article reviews the results from studying two quantitative data sets: (I) benchmarking data from 329 building projects and 621 contracts and (II) questionnaire data from an electronic survey comprising 130 contractors. This study provides in-depth knowledge...

  19. 3D-imaging of selective laser melting defects in a Co–Cr–Mo alloy by synchrotron radiation micro-CT

    International Nuclear Information System (INIS)

    Zhou, Xin; Wang, Dianzheng; Liu, Xihe; Zhang, DanDan; Qu, Shilian; Ma, Jing; London, Gary; Shen, Zhijian; Liu, Wei

    2015-01-01

    Microstructure defects set the mechanical property limits for solid Co–Cr–Mo alloy prepared by selective laser melting (SLM). Previous studies were mainly based on 2D SEM images and thus not able to provide information of the 3D morphologies of the complex defects. In this paper, the remaining porosities in Co–Cr–Mo alloy parts prepared by selective laser melting were presented in relation to the laser processing parameters. In order to understand the defect forming mechanism, accurate 3D images of defects inside SLM fabricated Co–Cr–Mo samples were provided by synchrotron radiation micro-CT imaging of 300 μm thick slices cut from a 10 mm cube. With 3D reconstructed images distinctive morphologies of SLM defects spanning across the consolidated powder layers were generated. The faults can be classified as single layer or multi-layers defects. The accidental single layer defects form as gaps between adjacent laser melt tracks or melt track discontinuousness caused by inherent fluid instability under various disturbances. The first formed single layer defect generates often a multi-layer defect spanning for 2–3 subsequent powder layers. By stabilizing the melt pool flow and by reducing the surface roughness through adjusting processing parameters it appears possible to reduce the defect concentrations

  20. Professor John Scott, folate and neural tube defects.

    Science.gov (United States)

    Hoffbrand, A Victor

    2014-02-01

    John Scott (1940-2013) was born in Dublin where he was to spend the rest of his career, both as an undergraduate and subsequently Professor of Biochemistry and Nutrition at Trinity College. His research with the talented group of scientists and clinicians that he led has had a substantial impact on our understanding of folate metabolism, mechanisms of its catabolism and deficiency. His research established the leading theory of folate involvement with vitamin B12 in the pathogenesis of vitamin B12 neuropathy. He helped to establish the normal daily intake of folate and the increased requirements needed either in food or as a supplement before and during pregnancy to prevent neural tube defects. He also suggested a dietary supplement of vitamin B12 before and during pregnancy to reduce the risk of neural tube defects. It would be an appropriate epitaph if fortification of food with folic acid became mandatory in the UK and Ireland, as it is in over 70 other countries. © 2013 John Wiley & Sons Ltd.

  1. Controlling defects and secondary phases of CZTS by surfactant Potassium

    Science.gov (United States)

    Zhu, Junyi; Zhang, Yiou; Tse, Kinfai; Xiao, Xudong

    Cu2ZnSnS4 (CZTS) is a promising photovoltaic absorber material with earth abundant and nontoxic elements. However, the detrimental native defects and secondary phases of CSTS will largely reduce the energy conversion efficiencies. To understand the origin of these problems during the growth of CZTS, we investigated the kinetic processes on CZTS (-1-1-2) surface, using first principles calculations. A surface Zn atom was found to occupy the subsurface Cu site easily due to a low reaction barrier, which may lead to a high ZnCu concentration and a secondary phase of ZnS. These n-type defects may create deep electron traps near the interface and become detrimental to device performance. To reduce the population of ZnCu and the secondary phase, we propose to use K as a surfactant to alter surface kinetic processes. Improvements on crystal quality and device performance based on this surfactant are consistent with early experimental observations. Computing resources were provided by the High Performance Cluster Computing Centre, Hong Kong Baptist University. This work was supported by the start-up funding at CUHK.

  2. Radiation induced segregation and point defects in binary copper alloys

    International Nuclear Information System (INIS)

    Monteiro, W.A.

    1984-01-01

    Considerable progress, both theoretical and experimental, has been made in establishing and understanding the influence of factors such as temperature, time, displacement rate dependence and the effect of initial solute misfit on radiation induced solute diffusion and segregation. During irradiation, the composition of the alloy changes locally, due to defect flux driven non-equilibrium segregation near sinks such as voids, external surfaces and grain boundaries. This change in composition could influence properties and phenomena such as ductility, corrosion resistance, stress corrosion cracking, sputtering and blistering of materials used in thermo-nuclear reactors. In this work, the effect of 1 MeV electron irradiation on the initiation and development of segregation and defect diffusion in binary copper alloys has been studied in situ, with the aid of a high voltage electron microscope. The binary copper alloys had Be, Pt and Sn as alloying elements which had atomic radii less than, similar and greater than that of copper, respectively. It has been observed that in a wide irradiation temperature range, stabilization and growth of dislocation loops took place in Cu-Sn and Cu-Pt alloys. Whereas in the Cu-Be alloy, radiation induced precipitates formed and transformed to the stable γ phase. (Author) [pt

  3. Understanding in mathematics

    CERN Document Server

    Sierpinska, Anna

    1994-01-01

    The concept of understanding in mathematics with regard to mathematics education is considered in this volume, the main problem for mathematics teachers being how to facilitate their students'' understanding of the mathematics being taught.

  4. Understand Your Medication

    Science.gov (United States)

    ... Disease Lookup > Asthma > Living with Asthma > Managing Asthma Understand Your Asthma Medication There are a variety of ... healthcare team. They can help make sure you understand the correct way to take the medicines, or ...

  5. Understanding Puberty (For Parents)

    Science.gov (United States)

    ... Safe Videos for Educators Search English Español Understanding Puberty KidsHealth / For Parents / Understanding Puberty What's in this ... your child through all the changes? Stages of Puberty Sure, most of us know the telltale signs ...

  6. Understanding Identity and Organizations

    DEFF Research Database (Denmark)

    Christensen, Lars Thøger

    2013-01-01

    The article reviews the book "Understanding Identity and Organizations," by Kate Kenny, Andrea Whitle, and Hugh Wilmott.......The article reviews the book "Understanding Identity and Organizations," by Kate Kenny, Andrea Whitle, and Hugh Wilmott....

  7. Understanding Cancer Prognosis

    Medline Plus

    Full Text Available ... Understanding Cancer What Is Cancer? Cancer Statistics Cancer Disparities Understanding Cancer What Is Cancer Cancer Statistics Cancer Disparities Causes & Prevention Risk Factors Genetics Cancer Prevention Overview ...

  8. Understanding Food Labels

    Science.gov (United States)

    ... Healthy eating for girls Understanding food labels Understanding food labels There is lots of info on food ... need to avoid because of food allergies. Other food label terms top In addition to the Nutrition ...

  9. Insight into point defects and impurities in titanium from first principles

    Science.gov (United States)

    Nayak, Sanjeev K.; Hung, Cain J.; Sharma, Vinit; Alpay, S. Pamir; Dongare, Avinash M.; Brindley, William J.; Hebert, Rainer J.

    2018-03-01

    Titanium alloys find extensive use in the aerospace and biomedical industries due to a unique combination of strength, density, and corrosion resistance. Decades of mostly experimental research has led to a large body of knowledge of the processing-microstructure-properties linkages. But much of the existing understanding of point defects that play a significant role in the mechanical properties of titanium is based on semi-empirical rules. In this work, we present the results of a detailed self-consistent first-principles study that was developed to determine formation energies of intrinsic point defects including vacancies, self-interstitials, and extrinsic point defects, such as, interstitial and substitutional impurities/dopants. We find that most elements, regardless of size, prefer substitutional positions, but highly electronegative elements, such as C, N, O, F, S, and Cl, some of which are common impurities in Ti, occupy interstitial positions.

  10. Imaging techniques for visualizing and phenotyping congenital heart defects in murine models.

    Science.gov (United States)

    Liu, Xiaoqin; Tobita, Kimimasa; Francis, Richard J B; Lo, Cecilia W

    2013-06-01

    Mouse model is ideal for investigating the genetic and developmental etiology of congenital heart disease. However, cardiovascular phenotyping for the precise diagnosis of structural heart defects in mice remain challenging. With rapid advances in imaging techniques, there are now high throughput phenotyping tools available for the diagnosis of structural heart defects. In this review, we discuss the efficacy of four different imaging modalities for congenital heart disease diagnosis in fetal/neonatal mice, including noninvasive fetal echocardiography, micro-computed tomography (micro-CT), micro-magnetic resonance imaging (micro-MRI), and episcopic fluorescence image capture (EFIC) histopathology. The experience we have gained in the use of these imaging modalities in a large-scale mouse mutagenesis screen have validated their efficacy for congenital heart defect diagnosis in the tiny hearts of fetal and newborn mice. These cutting edge phenotyping tools will be invaluable for furthering our understanding of the developmental etiology of congenital heart disease. Copyright © 2013 Wiley Periodicals, Inc.

  11. A case of residual inferior sinus venosus defect after ineffective surgical closure.

    Science.gov (United States)

    Uga, Sayuri; Hidaka, Takayuki; Takasaki, Taiichi; Kihara, Yasuki

    2014-10-03

    A 38-year-old woman presented with cyanosis and heart failure 34 years after patch closure of an atrial septal defect and partial anomalous pulmonary venous connection. CT and cardiac catheterisation showed a residual defect that caused right-to-left shunting. The patch almost blocked the inferior vena cava from the right atrium, resulting in uncommon drainage of the inferior vena cava into the left atrium. Other anomalies included the coronary-to-pulmonary artery fistula and duplicate inferior vena cava with dilated azygos venous system. A second surgery was performed, and we confirmed an inferior sinus venosus defect, which is rare and can be misdiagnosed. The ineffective patch closure had caused a haemodynamic status that rarely occurs. We describe the diagnostic process and emphasise the importance of correctly understanding the entity. 2014 BMJ Publishing Group Ltd.

  12. Modelling of shrinkage cavity defects during the wheel and belt casting process

    International Nuclear Information System (INIS)

    Dablement, S; Mortensen, D; Fjaer, H; Lee, M; Grandfield, J; Savage, G; Nguyen, V

    2012-01-01

    Properzi continuous casting is a wheel and belt casting process used for producing aluminium wire rod which is essential to the making of electrical cables and over head lines. One of the main concerns of Properzi process users is to ensure good quality of the final product and to avoid cast defects especially the presence of shrinkage cavity. Numerical models developed with the Alsim software, which allows an automatic calculation of gap dependent heat transfer coefficients at the metal-mould interface due to thermal deformation, are used in order to get a better understanding on the shrinkage cavity formation. Models show the effect of process parameters on the cavity defect development and provide initial guidance for users in order to avoid this kind of casting defect.

  13. Point Defects in Two-Dimensional Layered Semiconductors: Physics and Its Applications

    Science.gov (United States)

    Suh, Joonki

    Recent advances in material science and semiconductor processing have been achieved largely based on in-depth understanding, efficient management and advanced application of point defects in host semiconductors, thus finding the relevant techniques such as doping and defect engineering as a traditional scientific and technological solution. Meanwhile, two- dimensional (2D) layered semiconductors currently draw tremendous attentions due to industrial needs and their rich physics at the nanoscale; as we approach the end of critical device dimensions in silicon-based technology, ultra-thin semiconductors have the potential as next- generation channel materials, and new physics also emerges at such reduced dimensions where confinement of electrons, phonons, and other quasi-particles is significant. It is therefore rewarding and interesting to understand and redefine the impact of lattice defects by investigating their interactions with energy/charge carriers of the host matter. Potentially, the established understanding will provide unprecedented opportunities for realizing new functionalities and enhancing the performance of energy harvesting and optoelectronic devices. In this thesis, multiple novel 2D layered semiconductors, such as bismuth and transition- metal chalcogenides, are explored. Following an introduction of conventional effects induced by point defects in semiconductors, the related physics of electronically active amphoteric defects is revisited in greater details. This can elucidate the complication of a two-dimensional electron gas coexisting with the topological states on the surface of bismuth chalcogenides, recently suggested as topological insulators. Therefore, native point defects are still one of the keys to understand and exploit topological insulators. In addition to from a fundamental science point of view, the effects of point defects on the integrated thermal-electrical transport, as well as the entropy-transporting process in

  14. Ab initio study of native defects in SnO under strain

    KAUST Repository

    Bianchi Granato, Danilo

    2014-04-01

    Tin monoxide (SnO) has promising properties to be applied as a p-type semiconductor in transparent electronics. To this end, it is necessary to understand the behaviour of defects in order to control them. We use density functional theory to study native defects of SnO under tensile and compressive strain. We show that Sn vacancies are less stable under tension and more stable under compression, irrespectively of the charge state. In contrast, O vacancies behave differently for different charge states. It turns out that the most stable defect under compression is the +1 charged O vacancy in an Sn-rich environment and the charge neutral O interstitial in an O-rich environment. Therefore, compression can be used to transform SnO from a p-type into either an n-type or an undoped semiconductor. Copyright © EPLA, 2014.

  15. Defects in boron ion implanted silicon

    International Nuclear Information System (INIS)

    Wu, W.K.

    1975-05-01

    The crystal defects formed after post-implantation annealing of B-ion-implanted Si irradiated at 100 keV to a moderate dose (2 x 10 14 /cm 2 ) were studied by transmission electron microscopy. Contrast analysis and annealing kinetics show at least two different kinds of linear rod-like defects along broken bracket 110 broken bracket directions. One kind either shrinks steadily remaining on broken bracket 110 broken bracket at high temperatures (greater than 850 0 C), or transforms into a perfect dislocation loop which rotates toward broken bracket 112 broken bracket perpendicular to its Burgers vector. The other kind shrinks steadily at moderate temperatures (approximately 800 0 C). The activation energy for shrinkage of the latter (3.5 +- 0.1 eV) is the same as that for B diffusion in Si, suggesting that this linear defect is a boron precipitate. There also exist a large number of perfect dislocation loops with Burgers vector a/2broken bracket 110 broken bracket. The depth distribution of all these defects was determined by stereomicroscopy. The B precipitates lying parallel to the foil surfaces are shown to be at a depth of about 3500 +- 600 A. The loops are also at the same depth, but with a broader spread, +-1100 A. Si samples containing B and samples containing no B (P-doped) were irradiated in the 650-kV electron microscope. Irradiation at 620 0 C resulted in the growth of very long linear defects in the B-doped samples but not in the others, suggesting that at 620 0 C Si interstitials produced by the electron beam replace substitutional B some of which precipitates in the form of long rods along broken bracket 110 broken bracket. (DLC)

  16. Understanding the Scientific Basis of Electrocaloric Effect in Defects Modified Ferroelectric Polymers

    Science.gov (United States)

    2014-12-19

    allowed to burnout organics at 600°C for 10 hours. Subsequently, the MLCCs are sintered to consolidate the layers of BZT films and Pt electrodes into...such as hysteresis may change with the copolymer content. Presented in the inset of Fig. 20 is the maximum polarization hysteresis EH- EL at Pmax/2...for the data in Fig. 20, where Pmax is the maximum polarization at 150 MV/m, EH and EL are the fields at Pmax/2 in increasing and decreasing the

  17. Understanding the defect chemistry of alkali metal strontium silicate solid solutions: insights from experiment and theory

    KAUST Repository

    Bayliss, Ryan D.; Cook, Stuart N.; Scanlon, David O.; Fearn, Sarah; Cabana, Jordi; Greaves, Colin; Kilner, John A.; Skinner, Stephen J.

    2014-01-01

    © the Partner Organisations 2014. Recent reports of remarkably high oxide ion conduction in a new family of strontium silicates have been challenged. It has recently been demonstrated that, in the nominally potassium substituted strontium germanium silicate material, the dominant charge carrier was not the oxygen ion, and furthermore that the material was not single phase (R. D. Bayliss et. al., Energy Environ. Sci., 2014, DOI: 10.1039/c4ee00734d). In this work we re-investigate the sodium-doped strontium silicate material that was reported to exhibit the highest oxide ion conductivity in the solid solution, nominally Sr0.55Na0.45SiO2.775. The results show lower levels of total conductivity than previously reported and sub-micron elemental mapping demonstrates, in a similar manner to that reported for the Sr0.8K0.2Si0.5Ge0.5O2.9 composition, an inhomogeneous chemical distribution correlating with a multiphase material. It is also shown that the conductivity is not related to protonic mobility. A density functional theory computational approach provides a theoretical justification for these new results, related to the high energetic costs associated with oxygen vacancy formation. This journal is

  18. Understanding the defect chemistry of alkali metal strontium silicate solid solutions: insights from experiment and theory

    KAUST Repository

    Bayliss, Ryan D.

    2014-09-24

    © the Partner Organisations 2014. Recent reports of remarkably high oxide ion conduction in a new family of strontium silicates have been challenged. It has recently been demonstrated that, in the nominally potassium substituted strontium germanium silicate material, the dominant charge carrier was not the oxygen ion, and furthermore that the material was not single phase (R. D. Bayliss et. al., Energy Environ. Sci., 2014, DOI: 10.1039/c4ee00734d). In this work we re-investigate the sodium-doped strontium silicate material that was reported to exhibit the highest oxide ion conductivity in the solid solution, nominally Sr0.55Na0.45SiO2.775. The results show lower levels of total conductivity than previously reported and sub-micron elemental mapping demonstrates, in a similar manner to that reported for the Sr0.8K0.2Si0.5Ge0.5O2.9 composition, an inhomogeneous chemical distribution correlating with a multiphase material. It is also shown that the conductivity is not related to protonic mobility. A density functional theory computational approach provides a theoretical justification for these new results, related to the high energetic costs associated with oxygen vacancy formation. This journal is

  19. Defect Engineering and Interface Phenomena in Tin Oxide

    KAUST Repository

    Albar, Arwa

    2017-04-05

    The advance in transparent electronics requires high-performance transparent conducting oxide materials. The microscopic properties of these materials are sensitive to the presence of defects and interfaces and thus fundamental understanding is required for materials engineering. In this thesis, first principles density functional theory is used to investigate the possibility of tuning the structural, electronic and magnetic properties of tin oxide by means of defects and interfaces. Our aim is to reveal unique properties and the parameters to control them as well as to explain the origin of unique phenomena in oxide materials. The stability of native defect in tin monoxide (SnO) under strain is investigated using formation energy calculations. We find that the conductivity (which is controlled by native defects) can be switched from p-type to either n-type or undoped semiconducting by means of applied pressure. We then target inducing magnetism in SnO by 3d transition metal doping. We propose that V doping is efficient to realize spin polarization at high temperature. We discuss different tin oxide interfaces. Metallic states are found to form at the SnO/SnO2 interface with electronic properties that depend on the interface terminations. The origin of these states is explained in terms of charge transfer caused by chemical bonding and band alignment. For the SnO/SnO2 heterostructure, we observe the formation of a two dimensional hole gas at the interface, which is surprising as it cannot be explained by the standard polar catastrophe model. Thus, we propose a charge density discontinuity model to explain our results. The model can be generalized to other polar-polar interfaces. Motivated by technological applications, the electronic and structural properties of the MgO (100)/SnO2 (110) interface are investigated. Depending on the interface termination, we observe the formation of a two dimensional electron gas or spin polarized hole gas. Aiming to identify further

  20. Defect evolution in cosmology and condensed matter quantitative analysis with the velocity-dependent one-scale model

    CERN Document Server

    Martins, C J A P

    2016-01-01

    This book sheds new light on topological defects in widely differing systems, using the Velocity-Dependent One-Scale Model to better understand their evolution. Topological defects – cosmic strings, monopoles, domain walls or others - necessarily form at cosmological (and condensed matter) phase transitions. If they are stable and long-lived they will be fossil relics of higher-energy physics. Understanding their behaviour and consequences is a key part of any serious attempt to understand the universe, and this requires modelling their evolution. The velocity-dependent one-scale model is the only fully quantitative model of defect network evolution, and the canonical model in the field. This book provides a review of the model, explaining its physical content and describing its broad range of applicability.

  1. Effect of morphology and defect density on electron transfer of electrochemically reduced graphene oxide

    International Nuclear Information System (INIS)

    Zhang, Yan; Hao, Huilian; Wang, Linlin

    2016-01-01

    Highlights: • Different morphologies of ERGO on the surface of GCE were prepared via different methods. • The defect densities of ERGO were controlled by tuning the mass or concentration of GO. • A higher defect density of ERGO accelerates electron transfer rate. • ERGO with more exposed edge planes shows significantly higher electron transfer kinetics. • Both edge planes and defect density contribute to electron transfer of ERGO. - Abstract: Electrochemically reduced graphene oxide (ERGO) is widely used to construct electrochemical sensors. Understanding the electron transfer behavior of ERGO is essential for its electrode material applications. In this paper, different morphologies of ERGO were prepared via two different methods. Compared to ERGO/GCEs prepared by electrochemical reduction of pre-deposited GO, more exposed edge planes of ERGO are observed on the surface of ERGO-GCE that was constructed by electrophoretic deposition of GO. The defect densities of ERGO were controlled by tuning the mass or concentration of GO. The electron transfer kinetics (k"0) of GCE with different ERGOs was comparatively investigated. Owing to increased surface areas and decreased defect density, the k"0 values of ERGO/GCE initially increase and then decrease with incrementing of GO mass. When the morphology and surface real areas of ERGO-GCE are the same, an increased defect density induces an accelerated electron transfer rate. k"0 valuesof ERGO-GCEs are about 1 order of magnitude higher than those of ERGO/GCEs due to the difference in the amount of edge planes. This work demonstrates that both defect densities and edge planes of ERGO play crucial roles in electron transfer kinetics.

  2. Effect of morphology and defect density on electron transfer of electrochemically reduced graphene oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yan, E-mail: yanzhang@sues.edu.cn [School of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Hao, Huilian, E-mail: huilian.hao@sues.edu.cn [School of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China); Wang, Linlin, E-mail: wlinlin@mail.ustc.edu.cn [College of Chemistry and Chemical Engineering, Shanghai University of Engineering Science, Shanghai 201620 (China)

    2016-12-30

    Highlights: • Different morphologies of ERGO on the surface of GCE were prepared via different methods. • The defect densities of ERGO were controlled by tuning the mass or concentration of GO. • A higher defect density of ERGO accelerates electron transfer rate. • ERGO with more exposed edge planes shows significantly higher electron transfer kinetics. • Both edge planes and defect density contribute to electron transfer of ERGO. - Abstract: Electrochemically reduced graphene oxide (ERGO) is widely used to construct electrochemical sensors. Understanding the electron transfer behavior of ERGO is essential for its electrode material applications. In this paper, different morphologies of ERGO were prepared via two different methods. Compared to ERGO/GCEs prepared by electrochemical reduction of pre-deposited GO, more exposed edge planes of ERGO are observed on the surface of ERGO-GCE that was constructed by electrophoretic deposition of GO. The defect densities of ERGO were controlled by tuning the mass or concentration of GO. The electron transfer kinetics (k{sup 0}) of GCE with different ERGOs was comparatively investigated. Owing to increased surface areas and decreased defect density, the k{sup 0} values of ERGO/GCE initially increase and then decrease with incrementing of GO mass. When the morphology and surface real areas of ERGO-GCE are the same, an increased defect density induces an accelerated electron transfer rate. k{sup 0} valuesof ERGO-GCEs are about 1 order of magnitude higher than those of ERGO/GCEs due to the difference in the amount of edge planes. This work demonstrates that both defect densities and edge planes of ERGO play crucial roles in electron transfer kinetics.

  3. The defect chemistry of UO2 ± x from atomistic simulations

    Science.gov (United States)

    Cooper, M. W. D.; Murphy, S. T.; Andersson, D. A.

    2018-06-01

    Control of the defect chemistry in UO2 ± x is important for manipulating nuclear fuel properties and fuel performance. For example, the uranium vacancy concentration is critical for fission gas release and sintering, while all oxygen and uranium defects are known to strongly influence thermal conductivity. Here the point defect concentrations in thermal equilibrium are predicted using defect energies from density functional theory (DFT) and vibrational entropies calculated using empirical potentials. Electrons and holes have been treated in a similar fashion to other charged defects allowing for structural relaxation around the localized electronic defects. Predictions are made for the defect concentrations and non-stoichiometry of UO2 ± x as a function of oxygen partial pressure and temperature. If vibrational entropy is omitted, oxygen interstitials are predicted to be the dominant mechanism of excess oxygen accommodation over only a small temperature range (1265 K-1350 K), in contrast to experimental observation. Conversely, if vibrational entropy is included oxygen interstitials dominate from 1165 K to 1680 K (Busker potential) or from 1275 K to 1630 K (CRG potential). Below these temperature ranges, excess oxygen is predicted to be accommodated by uranium vacancies, while above them the system is hypo-stoichiometric with oxygen deficiency accommodated by oxygen vacancies. Our results are discussed in the context of oxygen clustering, formation of U4O9, and issues for fuel behavior. In particular, the variation of the uranium vacancy concentrations as a function of temperature and oxygen partial pressure will underpin future studies into fission gas diffusivity and broaden the understanding of UO2 ± x sintering.

  4. Psychological aspects of patients with breast cancer depending on the presence of visible postoperative defect

    Directory of Open Access Journals (Sweden)

    A. D. Zikiryakhodzhaev

    2015-01-01

    Full Text Available Objective. The study of coping behavior of patients with breast cancer (I, II stages in the postoperative period with «externally visible postoperative defect".Materials and methods. We studied the psychological characteristics of 35 patients with breast cancer (I, II stage, who underwent radical mastectomy, women were characterized in the postoperative period as "externally visible postoperative defect" ("e.v.p.d.", 35 patients with breast cancer (I, II stage who underwent ablative and reconstructive plastic surgery, women were characterized in the postoperative period as "without an externally visible postoperative defect" ("without an e.v.p.d.".The results and conclusions. The results of the study of women in both groups indicate that the patients are moderately using coping strategies for coping with the disease, preferring the strategy of "problem resolution" and "search of social support". Patients with breast cancer "with externally visible postoperative defect in comparing with patients with breast cancer "without an externally visible postoperative defect" often use positive religious coping in coping with the disease. The group of women with «externally visible postoperative defect" usually operate with negative religious coping. Both groups of women focused on the perception of social support. In a greater degree of social support they perceive from family and significant for them. Women with breast cancer and "externally visible postoperative defect” compared with women “without an externally visible postoperative defect" are not satisfied with your opportunities, have a feeling of weakness, doubt ability to evoke respect, sympathy, understanding and approval from others. They seek to change, doubt their self-worth, willing to put themselves in the guilt of their mistakes, failures, have low self-esteem. The group of patients with breast cancer "with externally visible postoperative defect" has an external locus of control

  5. Understanding mitochondrial myopathies: a review

    Directory of Open Access Journals (Sweden)

    Abhimanyu S. Ahuja

    2018-05-01

    Full Text Available Mitochondria are small, energy-producing structures vital to the energy needs of the body. Genetic mutations cause mitochondria to fail to produce the energy needed by cells and organs which can cause severe disease and death. These genetic mutations are likely to be in the mitochondrial DNA (mtDNA, or possibly in the nuclear DNA (nDNA. The goal of this review is to assess the current understanding of mitochondrial diseases. This review focuses on the pathology, causes, risk factors, symptoms, prevalence data, symptomatic treatments, and new research aimed at possible preventions and/or treatments of mitochondrial diseases. Mitochondrial myopathies are mitochondrial diseases that cause prominent muscular symptoms such as muscle weakness and usually present with a multitude of symptoms and can affect virtually all organ systems. There is no cure for these diseases as of today. Treatment is generally supportive and emphasizes symptom management. Mitochondrial diseases occur infrequently and hence research funding levels tend to be low in comparison with more common diseases. On the positive side, quite a few genetic defects responsible for mitochondrial diseases have been identified, which are in turn being used to investigate potential treatments. Speech therapy, physical therapy, and respiratory therapy have been used in mitochondrial diseases with variable results. These therapies are not curative and at best help with maintaining a patient’s current abilities to move and function.

  6. Influence of irradiation defects on anelastic properties of magnesium

    International Nuclear Information System (INIS)

    Minier, C.; Haneczok, G.; Lauzier, J.

    1985-01-01

    Irradiation defects in magnesium and their interactions with dislocations are studied by internal friction and elastic modulus. Long distance migration of different defects are determined. Relaxation peaks at very low temperature are analyzed. In the interaction peak between defects and dislocations it is shown that defects are interstitials and that dislocations are responsible for the peak B 1 and the interaction mechanism is probably associated to a side motion of defects along the lines. Defects brought by irradiation on dislocations are used for testing Bordoni relaxation theory and variation of parameters of peak B 1 and B 2 are analyzed [fr

  7. Finite element approximation of the fields of bulk and interfacial line defects

    Science.gov (United States)

    Zhang, Chiqun; Acharya, Amit; Puri, Saurabh

    2018-05-01

    A generalized disclination (g.disclination) theory (Acharya and Fressengeas, 2015) has been recently introduced that goes beyond treating standard translational and rotational Volterra defects in a continuously distributed defects approach; it is capable of treating the kinematics and dynamics of terminating lines of elastic strain and rotation discontinuities. In this work, a numerical method is developed to solve for the stress and distortion fields of g.disclination systems. Problems of small and finite deformation theory are considered. The fields of a single disclination, a single dislocation treated as a disclination dipole, a tilt grain boundary, a misfitting grain boundary with disconnections, a through twin boundary, a terminating twin boundary, a through grain boundary, a star disclination/penta-twin, a disclination loop (with twist and wedge segments), and a plate, a lenticular, and a needle inclusion are approximated. It is demonstrated that while the far-field topological identity of a dislocation of appropriate strength and a disclination-dipole plus a slip dislocation comprising a disconnection are the same, the latter microstructure is energetically favorable. This underscores the complementary importance of all of topology, geometry, and energetics in understanding defect mechanics. It is established that finite element approximations of fields of interfacial and bulk line defects can be achieved in a systematic and routine manner, thus contributing to the study of intricate defect microstructures in the scientific understanding and predictive design of materials. Our work also represents one systematic way of studying the interaction of (g.)disclinations and dislocations as topological defects, a subject of considerable subtlety and conceptual importance (Aharoni et al., 2017; Mermin, 1979).

  8. Valuation of Understanding

    DEFF Research Database (Denmark)

    Wiberg, Merete

    An important aim for the teacher in Higher Education is that students, in order to learn, achieve understanding in terms of being able to handle knowledge in a certain way. In this paper focus will be on understanding as a phenomenon which is permeated with values of what good understanding might...... be. Understanding is to be discussed as a phenomenon which in its definition is relative to the paradigm of educational thinking in which it is embedded. Paradigms of valuation of understanding in higher education will be viewed from two perspectives: An anglosaxon curriculum studies tradition...

  9. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in

  10. EUV mask defect inspection and defect review strategies for EUV pilot line and high volume manufacturing

    Science.gov (United States)

    Chan, Y. David; Rastegar, Abbas; Yun, Henry; Putna, E. Steve; Wurm, Stefan

    2010-04-01

    Reducing mask blank and patterned mask defects is the number one challenge for extreme ultraviolet lithography. If the industry succeeds in reducing mask blank defects at the required rate of 10X every year for the next 2-3 years to meet high volume manufacturing defect requirements, new inspection and review tool capabilities will soon be needed to support this goal. This paper outlines the defect inspection and review tool technical requirements and suggests development plans to achieve pilot line readiness in 2011/12 and high volume manufacturing readiness in 2013. The technical specifications, tooling scenarios, and development plans were produced by a SEMATECH-led technical working group with broad industry participation from material suppliers, tool suppliers, mask houses, integrated device manufacturers, and consortia. The paper summarizes this technical working group's assessment of existing blank and mask inspection/review infrastructure capabilities to support pilot line introduction and outlines infrastructure development requirements and tooling strategies to support high volume manufacturing.

  11. Defect-related internal dissipation in mechanical resonators and the study of coupled mechanical systems.

    Energy Technology Data Exchange (ETDEWEB)

    Friedmann, Thomas Aquinas; Czaplewski, David A.; Sullivan, John Patrick; Modine, Normand Arthur; Wendt, Joel Robert; Aslam, Dean (Michigan State University, Lansing, MI); Sepulveda-Alancastro, Nelson (University of Puerto Rico, Mayaguez, PR)

    2007-01-01

    Understanding internal dissipation in resonant mechanical systems at the micro- and nanoscale is of great technological and fundamental interest. Resonant mechanical systems are central to many sensor technologies, and microscale resonators form the basis of a variety of scanning probe microscopies. Furthermore, coupled resonant mechanical systems are of great utility for the study of complex dynamics in systems ranging from biology to electronics to photonics. In this work, we report the detailed experimental study of internal dissipation in micro- and nanomechanical oscillators fabricated from amorphous and crystalline diamond materials, atomistic modeling of dissipation in amorphous, defect-free, and defect-containing crystalline silicon, and experimental work on the properties of one-dimensional and two-dimensional coupled mechanical oscillator arrays. We have identified that internal dissipation in most micro- and nanoscale oscillators is limited by defect relaxation processes, with large differences in the nature of the defects as the local order of the material ranges from amorphous to crystalline. Atomistic simulations also showed a dominant role of defect relaxation processes in controlling internal dissipation. Our studies of one-dimensional and two-dimensional coupled oscillator arrays revealed that it is possible to create mechanical systems that should be ideal for the study of non-linear dynamics and localization.

  12. Testing of defects in Si semiconductor apparatus by using single-photon detection

    International Nuclear Information System (INIS)

    Zhongliang, Pan; Ling, Chen; Guangju, Chen

    2013-01-01

    The failure analysis of semiconductor apparatus is very needed for ensuring product quality, which can find several types of defects in the semiconductor apparatus. A new testing method for the defects in Si semiconductor apparatus is presented in this paper, the method makes use of photon emissions to find out the failure positions or failure components by taking advantage of the infrared photo emission characteristics of semiconductor apparatus. These emitted photons carry the information of the apparatus structure. If there are defects in the apparatus, these photons can help in understanding the apparatus properties and detecting the defects. An algorithm for the generation of circuit input vectors are presented in this paper to enhance the strength of the emitted photons for the given components in the semiconductor apparatus. The multiple-valued logic, the static timing analysis and path sensitizations, are used in the algorithm. A lot of experimental results for the Si semiconductor apparatus show that many types of defects such as contact spiking and latchup failure etc., can be detected accurately by the method proposed in this paper

  13. Surface defects characterization in a quantum wire by coherent phonons scattering

    Energy Technology Data Exchange (ETDEWEB)

    Rabia, M. S. [Laboratoire de Mécanique des Structures et Energétique, Faculté du Génie de la Construction, Université. Mammeri de Tizi-Ouzou, BP 17 RP Hasnaoua II, Tizi-Ouzou 15000, Algérie m2msr@yahoo.fr (Algeria)

    2015-03-30

    The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices.

  14. Surface defects characterization in a quantum wire by coherent phonons scattering

    International Nuclear Information System (INIS)

    Rabia, M. S.

    2015-01-01

    The influence of surface defects on the scattering properties of elastic waves in a quasi-planar crystallographic waveguide is studied in the harmonic approximation using the matching method formalism. The structural model is based on three infinite atomic chains forming a perfect lattice surmounted by an atomic surface defect. Following the Landauer approach, we solve directly the Newton dynamical equation with scattering boundary conditions and taking into account the next nearest neighbour’s interaction. A detailed study of the defect-induced fluctuations in the transmission spectra is presented for different adatom masses. As in the electronic case, the presence of localized defect-induced states leads to Fano-like resonances. In the language of mechanical vibrations, these are called continuum resonances. Numerical results reveal the intimate relation between transmission spectra and localized defect states and provide a basis for the understanding of conductance spectroscopy experiments in disordered mesoscopic systems. The results could be useful for the design of phononic devices

  15. Tutorial: Junction spectroscopy techniques and deep-level defects in semiconductors

    Science.gov (United States)

    Peaker, A. R.; Markevich, V. P.; Coutinho, J.

    2018-04-01

    The term junction spectroscopy embraces a wide range of techniques used to explore the properties of semiconductor materials and semiconductor devices. In this tutorial review, we describe the most widely used junction spectroscopy approaches for characterizing deep-level defects in semiconductors and present some of the early work on which the principles of today's methodology are based. We outline ab-initio calculations of defect properties and give examples of how density functional theory in conjunction with formation energy and marker methods can be used to guide the interpretation of experimental results. We review recombination, generation, and trapping of charge carriers associated with defects. We consider thermally driven emission and capture and describe the techniques of Deep Level Transient Spectroscopy (DLTS), high resolution Laplace DLTS, admittance spectroscopy, and scanning DLTS. For the study of minority carrier related processes and wide gap materials, we consider Minority Carrier Transient Spectroscopy (MCTS), Optical DLTS, and deep level optical transient spectroscopy together with some of their many variants. Capacitance, current, and conductance measurements enable carrier exchange processes associated with the defects to be detected. We explain how these methods are used in order to understand the behaviour of point defects and the determination of charge states and negative-U (Hubbard correlation energy) behaviour. We provide, or reference, examples from a wide range of materials including Si, SiGe, GaAs, GaP, GaN, InGaN, InAlN, and ZnO.

  16. Observation and analysis of defect cluster production and interactions with dislocations

    International Nuclear Information System (INIS)

    Zinkle, S.J.; Matsukawa, Y.

    2004-01-01

    The current understanding of defect production fundamentals in neutron-irradiated face centered cubic (FCC) and body centered cubic (BCC) metals is briefly reviewed, based primarily on transmission electron microscope observations. Experimental procedures developed by Michio Kiritani and colleagues have been applied to quantify defect cluster size, density, and nature. Differences in defect accumulation behavior of irradiated BCC and FCC metals are discussed. Depending on the defect cluster obstacle strength, either the dispersed barrier hardening model or the Friedel-Kroupa-Hirsch weak barrier model can be used to describe major aspects of radiation hardening. Irradiation at low temperature can cause a change in deformation mode from dislocation cell formation at low doses to twinning or dislocation channeling at higher doses. The detailed interaction between dislocations and defect clusters helps determine the dominant deformation mode. Recent observations of the microstructure created by plastic deformation of quenched and irradiated metals are summarized, including in situ deformation results. Examples of annihilation of stacking fault tetrahedra by gliding dislocations and subsequent formation of mobile superjogs are shown

  17. Identification and characterization of viral defective RNA genomes in influenza B virus.

    Science.gov (United States)

    Sheng, Zizhang; Liu, Runxia; Yu, Jieshi; Ran, Zhiguang; Newkirk, Simon J; An, Wenfeng; Li, Feng; Wang, Dan

    2018-04-01

    Influenza B virus (FLUBV) is an important pathogen that infects humans and causes seasonal influenza epidemics. To date, little is known about defective genomes of FLUBV and their roles in viral replication. In this study, by using a next-generation sequencing approach, we analyzed total mRNAs extracted from A549 cells infected with B/Brisbane/60/2008 virus (Victoria lineage), and identified four defective FLUBV genomes with two (PB1∆A and PB1∆B) from the polymerase basic subunit 1 (PB1) segment and the other two (M∆A and M∆B) from the matrix (M) protein-encoding segment. These defective genomes contained significant deletions in the central regions with each having the potential for encoding a novel polypeptide. Significantly, each of the discovered defective RNAs can potently inhibit the replication of B/Yamanashi/166/98 (Yamagata lineage). Furthermore, PB1∆A was able to interfere modestly with influenza A virus (FLUAV) replication. In summary, our study provides important initial insights into FLUBV defective-interfering genomes, which can be further explored to achieve better understanding of the replication, pathogenesis and evolution of FLUBV.

  18. A study of defects in diamond

    International Nuclear Information System (INIS)

    Hunt, D.C.

    1999-01-01

    Defects, intrinsic and extrinsic, in natural and synthetic diamond, have been studied using Electron Paramagnetic Resonance (EPR) and optical absorption techniques. EPR measurements have been used in conjunction with infrared absorption to identify the defect-induced one-phonon infrared spectra produced by ionised single substitutional nitrogen, N s + . This N s + spectrum is characterised by a sharp peak at the Raman energy, 1332 cm -1 , accompanied by several broader resonances at 950(5), 1050(5), and 1095(5) cm -1 . Detailed concentration measurements show that a concentration of 5.5(5) ppm gives rise to an absorption of 1 cm -1 at 1332 cm -1 . The optical absorption band ND1, identified as the negative vacancy (V - ), is frequently used by diamond spectroscopists to measure the concentration of V - . Isoya has identified V - in the EPR spectra of irradiated diamond. The accuracy of EPR in determining concentrations, has been used to correlate the integrated absorption of the ND1 zero-phonon line to the concentration of V - centres. The parameter derived from this correlation is ∼16 times smaller than the previously accepted value obtained by indirect methods. A systematic study has been made - using EPR and optical absorption techniques - of synthetic type IIa diamonds, which have been irradiated with 2 MeV electrons in a specially developed dewar, allowing irradiation down to a measured sample temperature of 100K. Measurement of defect creation rates of the neutral vacancy and EPR defects, show a radical difference in the production rate of the EPR defect R2 between irradiation with the sample held at 100K and 350K. At 100K its production rate is 1.1(1) cm -1 , ∼10 times greater that at 350K. Observation of the di- -split interstitial (Ri) after irradiation at 100K proves the self-interstitial in diamond must be mobile at 100K, under the conditions of irradiation. Further study of the properties of the R2 defect (the most dominant EPR after electron

  19. Energetics and Defect Interactions of Complex Oxides for Energy Applications

    Science.gov (United States)

    Solomon, Jonathan Michael

    energetic stability for La solid solutions than for Y. Additionally, calculations performed for different atomic configurations show a preference for reduced (increased) oxygen vacancy coordination around La (Y) dopants. The current results are shown to be qualitatively consistent with related calculations and calorimetric measurements of heats of formation in other trivalent doped fluorite oxides, which show a tendency for increasing stability and increasing preference for higher oxygen coordination with increasing size of the trivalent impurity. We expand this investigation by considering a series of trivalent rare earth fission product cations, specifically, Y3+ (1.02 A, Shannon radius with eightfold coordination), Dy3+ (1.03 A), Gd 3+ (1.05 A), Eu3+ (1.07 A), Sm3+ (1.08 A), Pm3+ (1.09 A), Nd3+ (1.11 A), Pr3+ (1.13 A), Ce3+ (1.14 A) and La3+ (1.16 A). Compounds with ionic radius of the M3+ species smaller or larger than 1.09 A are found to have energetically preferred defect ordering arrangements. Systems with preferred defect ordering arrangements are suggestive of defect clustering in short range ordered solid solutions, which is expected to limit oxygen ion mobility and therefore the rate of oxidation of spent nuclear fuel. Finally, the energetics of rare earth substituted (M3+= La, Y, and Nd) UO2 solid solutions are investigated by employing a combination of calorimetric measurements and DFT based computations. The calorimetric studies are performed by Lei Zhang and Professor Alexandra Navrotsky at the University of Calfornia, Davis, as part of a joint computational/ experimental collaborative effort supported through the Materials Science of Actinides Energy Frontier Research Center. Calculated and measured formation enthalpies agree within 10 kJ/mol for stoichiometric oxygen/metal compositions. To better understand the factors governing the stability and defect binding in rare earth substituted urania solid solutions, systematic trends in the energetics are

  20. Natural defects and defects created by ionic implantation in zinc tellurium

    International Nuclear Information System (INIS)

    Roche, J.P.; Dupuy, M.; Pfister, J.C.

    1977-01-01

    Various defects have been studied in ZnTe crystals by transmission electron microscope and by scanning electron microscope in cathodo-luminescence mode: grain boundaries, sub-grain boundaries, twins. Ionic implants of boron (100 keV - 2x10 14 and 10 15 ions cm -2 ) were made on these crystals followed by isochrone annealing (30 minutes) of zinc under partial pressure at 550, 650 and 750 0 C. The nature of the defects was determined by transmission electron microscope: these are interstitial loops (b=1/3 ) the size of which varies between 20 A (non-annealed sample) and 180A (annealed at 750 0 C). The transmission electron microscope was also used to make concentration profiles of defects depending on depth. It is found that for the same implant (2x10 14 ions.cm -2 ), the defect peak moves towards the exterior of the crystal as the annealing temperature rises (400 - 1000 and 7000 A for the three annealings). These results are explained from a model which allows for the coalescence of defects and considers the surface of the sample as being the principal source of vacancies. During the annealings, the migration of vacancies brings about the gradual annihilation of the implant defects. The adjustment of certain calculation parameters on the computer result in giving 2 eV as energy value for the formation of vacancies [fr

  1. Implications of defect clusters formed in cascades on free defect generation and microstructural development

    International Nuclear Information System (INIS)

    Wiedersich, H.

    1992-12-01

    A large fraction of the defects produced by irradiation with energetic neutrons or heavy ions originates in cascades. Not only increased recombination of vacancy and interstitial defects but also significant clustering of like defects occur. Both processes reduce the number of point defects available for long range migration. Consequences of defect clustering in cascades will be discussed in a semi-quantitative form with the aid of calculations using a very simplified model: Quasi-steady-state distributions of immobile vacancy and/or interstitial clusters develop which, in turn, can become significant sinks for mobile defects, and, therefore reduce their lifetime. Although cluster sinks will cause segregation and, potentially, precipitation of second phases due to local changes of composition, the finite lifetime of clusters will not lead to lasting, local compositional changes. A transition from highly dense interstitial and vacancy cluster distributions to the void swelling regime occurs when the thermal evaporation of vacancies from small vacancy clusters becomes significant at higher temperatures. Unequal clustering of vacancies and interstitials leads to an imbalance of their fluxes of in the matrix and, hence, to unequal contributions to atom transport by interstitials and by vacancies even in the quasi-steady state approximation

  2. Vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association with Mayer-Rokitansky-Küster-Hauser syndrome in co-occurrence: two case reports and a review of the literature.

    Science.gov (United States)

    Bjørsum-Meyer, Thomas; Herlin, Morten; Qvist, Niels; Petersen, Michael B

    2016-12-21

    The vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome are rare conditions. We aimed to present two cases with the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser co-occurrence from our local surgical center and through a systematic literature search detect published cases. Furthermore, we aimed to collect existing knowledge in the embryopathogenesis and genetics in order to discuss a possible link between the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome. Our first case was a white girl delivered by caesarean section at 37 weeks of gestation; our second case was a white girl born at a gestational age of 40 weeks. A co-occurrence of vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal defect, and limb defect association and Mayer-Rokitansky-Küster-Hauser syndrome was diagnosed in both cases. We performed a systematic literature search in PubMed ((VACTERL) OR (VATER)) AND ((MRKH) OR (Mayer-Rokitansky-Küster-Hauser) OR (mullerian agenesis) OR (mullerian aplasia) OR (MURCS)) without limitations. A similar search was performed in Embase and the Cochrane library. We added two cases from our local center. All cases (n = 9) presented with anal atresia and renal defect. Vertebral defects were present in eight patients. Rectovestibular fistula was confirmed in seven patients. Along with the uterovaginal agenesis, fallopian tube aplasia appeared in five of nine cases and in two cases ovarian involvement also existed. The co-occurrence of the vertebral defect, anal atresia, cardiac defect, tracheoesophageal fistula/esophageal atresia, renal

  3. Point Defect Properties of Cd(Zn)Te and TlBr for Room-Temperature Gamma Radiation Detectors

    Science.gov (United States)

    Lordi, Vincenzo

    2013-03-01

    The effects of various crystal defects in CdTe, Cd1-xZnxTe (CZT), and TlBr are critical for their performance as room-temperature gamma radiation detectors. We use predictive first principles theoretical methods to provide fundamental, atomic scale understanding of the defect properties of these materials to enable design of optimal growth and processing conditions, such as doping, annealing, and stoichiometry. Several recent cases will be reviewed, including (i) accurate calculations of the thermodynamic and electronic properties of native point defects and point defect complexes in CdTe and CZT; (ii) the effects of Zn alloying on the native point defect properties of CZT; (iii) point defect diffusion and binding related to Te clustering in Cd(Zn)Te; (iv) the profound effect of native point defects--principally vacancies--on the intrinsic material properties of TlBr, particularly electronic and ionic conductivity; (v) tailored doping of TlBr to independently control the electronic and ionic conductivity; and (vi) the effects of metal impurities on the electronic properties and device performance of TlBr detectors. Prepared by LLNL under Contract DE-AC52-07NA27344 with support from the National Nuclear Security Administration Office of Nonproliferation and Verification Research and Development NA-22.

  4. Fundamental investigation of point defect interactions in FE-CR alloys

    International Nuclear Information System (INIS)

    Wirth, B.D.; Lee, H.J.; Wong, K.

    2008-01-01

    Full text of publication follows. Fe-Cr alloys are a leading candidate material for structural applications in Generation TV and fusion reactors, and there is a relatively large database on their irradiation performance. However, complete understanding of the response of Fe-Cr alloys to intermediate-to-high temperature irradiation, including the radiation induced segregation of Cr, requires knowledge of point defect and point defect cluster interactions with Cr solute atoms and impurities. We present results from a hierarchical multi-scale modelling approach of defect cluster behaviour in Fe-Cr alloys. The modelling includes ab initio electronic structure calculations performed using the VASP code with projector-augmented electron wave functions using PBE pseudo-potentials and a collinear treatment of magnetic spins, molecular dynamics using semi-empirical Finnic-Sinclair type potentials, and kinetic Monte Carlo simulations of coupled defect and Cr transport responsible for microstructural evolution. The modelling results are compared to experimental observations in both binary Fe-Cr and more complex ferritic-martensitic alloys, and provide a basis for understanding a dislocation loop evolution and the observations of Cr enrichment and depletion at grain boundaries in various irradiation experiments. (authors)

  5. Weyl geometry and the nonlinear mechanics of distributed point defects

    KAUST Repository

    Yavari, A.; Goriely, A.

    2012-01-01

    The residual stress field of a nonlinear elastic solid with a spherically symmetric distribution of point defects is obtained explicitly using methods from differential geometry. The material manifold of a solid with distributed point defects

  6. Electron irradiation-induced defects in {beta}-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Oshima, Ryuichiro [Osaka Prefectural Univ., Sakai (Japan). Reseach Inst. for Advanced Science and Technology

    1996-04-01

    To add information of point defects in cubic crystal SiC, polycrystal {beta}-SiC on the market was used as sample and irradiated by neutron and electron. In situ observation of neutron and electron irradiation-induced defects in {beta}-SiC were carried out by ultra high-voltage electronic microscope (UHVEM) and ordinary electronic microscope. The obtained results show that the electron irradiation-induced secondary defects are micro defects less than 20 nm at about 1273K, the density of defects is from 2x10{sup 17} to 1x10{sup 18}/cc, the secondary defects may be hole type at high temperature and the preexistant defects control nuclear formation of irradiation-induced defects, effective sink. (S.Y.)

  7. Defect spectroscopy of single ZnO microwires

    Science.gov (United States)

    Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

    2014-04-01

    The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

  8. Driving down defect density in composite EUV patterning film stacks

    Science.gov (United States)

    Meli, Luciana; Petrillo, Karen; De Silva, Anuja; Arnold, John; Felix, Nelson; Johnson, Richard; Murray, Cody; Hubbard, Alex; Durrant, Danielle; Hontake, Koichi; Huli, Lior; Lemley, Corey; Hetzer, Dave; Kawakami, Shinichiro; Matsunaga, Koichi

    2017-03-01

    Extreme ultraviolet lithography (EUVL) technology is one of the leading candidates for enabling the next generation devices, for 7nm node and beyond. As the technology matures, further improvement is required in the area of blanket film defectivity, pattern defectivity, CD uniformity, and LWR/LER. As EUV pitch scaling approaches sub 20 nm, new techniques and methods must be developed to reduce the overall defectivity, mitigate pattern collapse and eliminate film related defect. IBM Corporation and Tokyo Electron Limited (TELTM) are continuously collaborating to develop manufacturing quality processes for EUVL. In this paper, we review key defectivity learning required to enable 7nm node and beyond technology. We will describe ongoing progress in addressing these challenges through track-based processes (coating, developer, baking), highlighting the limitations of common defect detection strategies and outlining methodologies necessary for accurate characterization and mitigation of blanket defectivity in EUV patterning stacks. We will further discuss defects related to pattern collapse and thinning of underlayer films.

  9. The investigation of radiation induced defects in MgO

    International Nuclear Information System (INIS)

    Puetz, M.

    1990-05-01

    In this paper Frenkel defects were induced in MgO by 3 MeV electrons at low temperature. These defects were investigated by measurements of the optical absorption, by investigating the lattice parameters and Huang diffuse scattering. (WL)

  10. Angio- and echocardiography: viewing heart defects in more detail

    International Nuclear Information System (INIS)

    Goodwin, J.K.; Lombard, C.W.

    1990-01-01

    Angio- and echocardiography can help to confirm the diagnosis or evaluate the severity of a heart defect. Angiograms of dogs with pulmonic stenosis and tetralogy of Fallot are shown. Echocardiographic features of common congenital heart defects are summarized

  11. If Your Child Has a Heart Defect (For Parents)

    Science.gov (United States)

    ... Videos for Educators Search English Español If Your Child Has a Heart Defect KidsHealth / For Parents / If ... has any of these symptoms. Caring for Your Child Parenting kids with heart defects includes learning about ...

  12. Toward understanding dynamic annealing processes in irradiated ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Myers, Michael Thomas [Texas A & M Univ., College Station, TX (United States)

    2013-05-01

    High energy particle irradiation inevitably generates defects in solids. The ballistic formation and thermalization of the defect creation process occur rapidly, and are believed to be reasonably well understood. However, knowledge of the evolution of defects after damage cascade thermalization, referred to as dynamic annealing, is quite limited. Unraveling the mechanisms associated with dynamic annealing is crucial since such processes play an important role in the formation of stable postirradiation disorder in ion-beam-processing of semiconductors, and determines the “radiation tolerance” of many nuclear materials. The purpose of this dissertation is to further our understanding of the processes involved in dynamic annealing. In order to achieve this, two main tasks are undertaken.

  13. Understanding quantum physics

    International Nuclear Information System (INIS)

    Spillner, Vera

    2011-01-01

    This thesis presents a bundle definition for 'scientific understanding' through which the empirically equivalent interpretations of quantum mechanics can be evaluated with respect to the understanding they generate. The definition of understanding is based on a sufficient and necessary criterion, as well as a bundle of conditions - where a theory can be called most understandable whenever it fulfills the highest number of bundle criteria. Thereby the definition of understanding is based on the one hand on the objective number of criteria a theory fulfills, as well as, on the other hand, on the individual's preference of bundle criteria. Applying the definition onto three interpretations of quantum mechanics, the interpretation of David Bohm appears as most understandable, followed by the interpretation of Tim Maudlin and the Kopenhagen interpretation. These three interpretations are discussed in length in my thesis. (orig.)

  14. Characterization of lacunar defects by positrons annihilation

    CERN Document Server

    Barthe, M F; Blondiaux, G

    2003-01-01

    Among the nondestructive methods for the study of matter, the positrons annihilation method allows to sound the electronic structure of materials by measuring the annihilation characteristics. These characteristics depend on the electronic density as seen by the positon, and on the electron momentums distribution which annihilate with the positon. The positon is sensible to the coulombian potential variations inside a material and sounds preferentially the regions away from nuclei which represent potential wells. The lacunar-type defects (lack of nuclei) represent deep potential wells which can trap the positon up to temperatures close to the melting. This article describes the principles of this method and its application to the characterization of lacunar defects: 1 - positrons: matter probes (annihilation of electron-positon pairs, annihilation characteristics, positrons sources); 2 - positrons interactions in solids (implantation profiles, annihilation states, diffusion and trapping, positon lifetime spec...

  15. Electron damage and defects in organic crystals

    International Nuclear Information System (INIS)

    Howitt, D.G.

    1976-06-01

    The nature of the defects discernable from and the radiation damage that is induced by high resolution electron microscopy is reported. The structural aspects of the radiation damage process can be correlated to the expected radiochemical decomposition of these materials and these effects identified. The types of local defect formed by radiation damage are often clearly distinguishable, in high resolution images, from those inherent in the microstructure. Techniques used in this type of electron microscopy and the limitations imposed by radiation damage are described as are the relevant radiochemical characteristics of these processes. In copper pthalocyanine, microstructural features distinct from those induced by radiation damage were identified which are consistent with those predicted and described by other workers in similar materials. The high resolution studies indicate that some of the microstructures observed are caused by structural rearrangements that can account, to some extent, for additional crystallographic forms that have been identified in this material and the photochemical behaviour of related structures

  16. Ultrasonic characterization of defective porcelain tiles

    Directory of Open Access Journals (Sweden)

    Eren, E.

    2012-08-01

    Full Text Available The aim of this work is the optimization of ultrasonic methods in the non-destructive testing of sintered porcelain tiles containing defects. For this reason, a silicon nitride ball, carbon black and PMMA (Polymethylmethacrylate were imbedded in porcelain tile granules before pressing to make special defects in tiles. After sintering at 1220ºC, the time of flight of the ultrasonic waves and ultrasonic signal amplitudes through the sintered porcelain tiles were measured by a contact ultrasonic transducer operating on pulse-echo mode. This method can allow for defect detection using the A-scan. The results of the test showed that the amplitude of the received peak for a defective part is smaller than for a part which has no defects. Depending on the size, shape and position of the defect, its peak can be detected. Additionally, an immersion pulse-echo C-scan method was also used to differentiate between defects in porcelain tiles. By using this technique, it is possible to determine the place and shape of defects. To support the results of the ultrasonic investigation, a SEM characterization was also made.

    El fin principal de este trabajo es la optimización de métodos ultrasónicos en la prueba no destructiva de azulejos sinterizados de porcelana que contienen defectos. Por lo tanto, bolas del nitruro de silicio, negros de carbón y PMMA (polimetilmetacrilato fueron encajados en gránulos del azulejo de porcelana antes de presionar para hacer defectos especiales en azulejos. Después de sinterizado en 1220ºC, el tiempo de vuelo de las ondas ultrasónicas fue medido a través del azulejo sinterizado de la porcelana. El tiempo del vuelo de ondas ultrasónicas fue medido por un transductor de contacto ultrasónico operando en modo eco-pulso. Este método puede permitir la detección de defectos usando escaneo-A. Los resultados de la prueba demostraron que la amplitud del pico recibido por partes defectuosas es más pequeño que la parte

  17. Intrinsic thermal expansion of crystal defects

    International Nuclear Information System (INIS)

    Ganne, J.-P.

    1981-02-01

    Although the phenomenon of thermal expansion has long been known, the intrinsic thermal expansion coefficient (ITEC) βsub(d) of a point defect, derived from its formation volume vsub(d), has never been measured directly. The differential dilatometer by interferometry built by ASTY and GILDER is described. It has allowed βsub(d) to be measured for several defects. Vacancies and small interstitial loops were produced in aluminium by low temperature (20 K) fast neutron irradiation followed by an anneal up to the beginning of stage III (160 K). The very high value of the measured ratio βsub(d)/β 0 (12+-4) is comparable with a lattice statics calculated (42) value (11.5 0 [fr

  18. Defect trapping of deuterium implanted in aluminium

    International Nuclear Information System (INIS)

    Kido, Y.; Kakeno, M.; Yamada, K.; Hioki, T.; Kawamoto, J.

    1982-01-01

    The behaviour of deuterium implanted in Al was studied by the D( 3 He,p) 4 He and the D(d,p)T nuclear reactions. Changes of the depth profiles of the deuterium after heat treatments indicated that the implanted deuterium was trapped by the defect produced during the deuterium implantation and the release probability of the trapped deuterium increased as the specimen temperature was raised. Assuming a thermal equilibrium locally in the region of high defect concentration, the trapping energy of deuterium in Al was determined to be 0.12eV. Since the release probability for the single crystal was considerably larger than that for the polycrystal specimens, the deuterium was considered to be strongly trapped in the grain boundaries. Distributions of displaced Al atoms and the recovery of the lattice damage by annealing were measured by the channelling technique. (author)

  19. Excess Oxygen Defects in Layered Cuprates

    Science.gov (United States)

    Lightfoot, P.; Pei, S. Y.; Jorgensen, J. D.; Manthiram, A.; Tang, X. X.; Goodenough, J. B.

    1990-09-01

    Neutron powder diffraction has been used to study the oxygen defect chemistry of two non-superconducting layered cuprates, La{sub 1. 25}Dy{sub 0.75}Cu{sub 3.75}F{sub 0.5}, having a T{sup {asterisk}}- related structure, and La{sub 1.85}Sr{sub 1.15}Cu{sub 2}O{sub 6.25}, having a structure related to that of the newly discovered double-layer superconductor La{sub 2-x}Sr{sub x}CaCu{sub 2}O{sub 6}. The role played by oxygen defects in determining the superconducting properties of layered cuprates is discussed.

  20. Defect Engineering in Few-Layer Phosphorene.

    Science.gov (United States)

    Sharma, Ankur; Wen, Bo; Liu, Boqing; Myint, Ye Win; Zhang, Han; Lu, Yuerui

    2018-04-01

    Defect engineering in 2D phosphorene samples is becoming an important and powerful technique to alter their properties, enabling new optoelectronic applications, particularly at the infrared wavelength region. Defect engineering in a few-layer phosphorene sample via introduction of substrate trapping centers is realized. In a three-layer (3L) phosphorene sample, a strong photoluminescence (PL) emission peak from localized excitons at ≈1430 nm is observed, a much lower energy level than free excitonic emissions. An activation energy of ≈77 meV for the localized excitons is determined in temperature-dependent PL measurements. The relatively high activation energy supports the strong stability of the localized excitons even at elevated temperature. The quantum efficiency of localized exciton emission in 3L phosphorene is measured to be approximately three times higher than that of free excitons. These results could enable exciting applications in infrared optoelectronics. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Recovery of Frenkel defects in fcc metals

    International Nuclear Information System (INIS)

    Chaplin, R.L.; Miller, M.G.

    1976-01-01

    Because of the production of Frenkel defects occurs most readily along specific crystallographic directions in fcc structures, the recovery mechanism by which annihilation occurs should also be related to the same crystallographic orientations. The recovery path of a diffusing interstitial requires the formation of a temporary metastable state as a close-pair Frenkel defect prior to annihilation. A theoretical treatment of this scheme for interstitial-vacancy recombination shows that during the Isub(D) diffusion there is an experimentally measurable difference if the recovery forms a Isub(B) or a Isub(C) close-pair configuration in aluminum. Experimental results are given which show a difference from the theoretical predictions, and it is concluded that the assumed analytical function describing the interstitial-vacancy distribution created by a 0.4 MeV electron irradiation should be modified. (author)

  2. Bottlenecks in Software Defect Prediction Implementation in Industrial Projects

    OpenAIRE

    Hryszko Jarosław; Madeyski Lech

    2015-01-01

    Case studies focused on software defect prediction in real, industrial software development projects are extremely rare. We report on dedicated R&D project established in cooperation between Wroclaw University of Technology and one of the leading automotive software development companies to research possibilities of introduction of software defect prediction using an open source, extensible software measurement and defect prediction framework called DePress (Defect Prediction in Software Syst...

  3. Automated Diagnosis and Classification of Steam Generator Tube Defects

    International Nuclear Information System (INIS)

    Garcia, Gabe V.

    2004-01-01

    A major cause of failure in nuclear steam generators is tube degradation. Tube defects are divided into seven categories, one of which is intergranular attack/stress corrosion cracking (IGA/SCC). Defects of this type usually begin on the outer surface of the tubes and propagate both inward and laterally. In many cases these defects occur at or near the tube support plates. Several different methods exist for the nondestructive evaluation of nuclear steam generator tubes for defect characterization

  4. Dipolar and quadrupolar defects in a transport line

    International Nuclear Information System (INIS)

    Leleux, G.; Nghiem, P.

    1991-01-01

    The defects on a transport line of linear accelerator are studied. A transport line where the elements are influenced by the design or position defects is analyzed. Only dipolar and quadrupolar defects are considered, and the coupling betwen transversal motions are excluded. The data from the literature and those calculated by transfer matrices are compared. The defects on a line are considered from an analytical point of view. Closed optical structures are also studied [fr

  5. Defects and permutation branes in the Liouville field theory

    DEFF Research Database (Denmark)

    Sarkissian, Gor

    2009-01-01

    The defects and permutation branes for the Liouville field theory are considered. By exploiting cluster condition, equations satisfied by permutation branes and defects reflection amplitudes are obtained. It is shown that two types of solutions exist, discrete and continuous families.......The defects and permutation branes for the Liouville field theory are considered. By exploiting cluster condition, equations satisfied by permutation branes and defects reflection amplitudes are obtained. It is shown that two types of solutions exist, discrete and continuous families....

  6. Phonons, defects and optical damage in crystalline acetanilide

    Science.gov (United States)

    Kosic, Thomas J.; Hill, Jeffrey R.; Dlott, Dana D.

    1986-04-01

    Intense picosecond pulses cause accumulated optical damage in acetanilide crystals at low temperature. Catastrophic damage to the irradiated volume occurs after an incubation period where defects accumulate. The optical damage is monitored with subanosecond time resolution. The generation of defects is studied with damage-detected picosecond spectroscopy. The accumulation of defects is studied by time-resolved coherent Raman scattering, which is used to measure optical phonon scattering from the accumulating defects.

  7. Positron studies of defected metals, metallic surfaces

    International Nuclear Information System (INIS)

    Bansil, A.

    1991-01-01

    Specific problems proposed under this project included the treatment of electronic structure and momentum density in various disordered and defected systems. Since 1987, when the new high-temperature superconductors were discovered, the project focused extensively on questions concerning the electronic structure and Fermiology of high-T c superconductors, in particular, (i) momentum density and positron experiments, (ii) angle-resolved photoemission intensities, (iii) effects of disorder and substitutions in the high-T c 's

  8. Examination of weld defects by computed tomography

    Directory of Open Access Journals (Sweden)

    M. Jovanović

    2012-04-01

    Full Text Available Defects in metal arc gas (MAG welds made in S235JR low carbon steel of 6 mm thickness were examined. A sample containing lack of fusion (LOF and pores was examined by computed tomography – CT. The computed tomography examination was performed in order to define LOF size and position as well as dimensions and distribution of accompanying pores in the weld metal.

  9. Prosthetic management of an ocular defect

    Directory of Open Access Journals (Sweden)

    Siddesh Kumar Chintal

    2010-01-01

    Full Text Available The disfigurement associated with the loss of an eye can cause significant physical and emotional problems. Various treatment modalities are available, one of which is implants. Although implant has a superior outcome, it may not be advisable in all patients due to economic factors. The present article describes the prosthetic management of an ocular defect with a custom-made ocular prosthesis.

  10. Methods of orthopedic treatment of dentition defects

    Directory of Open Access Journals (Sweden)

    Konnov V.V.

    2016-09-01

    Full Text Available The article is devoted to the methods of orthopedic treatment of dentition defects. To restore the functionality and individual aesthetic standards of dental system, with different types of partial loss of teeth, depending on the anatomical and topographical conditions, various kinds of dental prosthesis designs are used in the oral cavity: non-removable (bridges, cantilever, adhesive dentures and removable (laminar and clasp dental prostheses, as well as their combinations.

  11. Defective myoblasts identified in Duchenne muscular dystrophy.

    OpenAIRE

    Blau, H M; Webster, C; Pavlath, G K

    1983-01-01

    A defect in the proliferative capacity of satellite cells, mononucleated precursors of mature muscle fibers, was found in clonal analyses of cells cultured from Duchenne muscular dystrophy (DMD) patients. The total yield of myoblasts per gram of muscle biopsy was decreased to 5% of normal. Of the DMD myoblast clones obtained, a large proportion contained a morphological class of flat distended cells that had an increased generation time and ceased to proliferate beyond 100-1,000 cells but cou...

  12. Congenital Heart Defects and Coronary Anatomy

    OpenAIRE

    Mawson, John B.

    2002-01-01

    Coronary artery anomalies are a well recognized feature of many cardiac malformations and have been catalogued in a number of reviews. This overview concentrates on 1) the interplay between congenital heart defects and coronary morphogenesis, examining how some of the embryology fits with the experiments of nature encountered in clinical practice; and 2) the influence of coronary anatomy on patient management. This overview uses, as examples, pulmonary atresia with intact ventricular septum, ...

  13. Disclinations, dislocations, and continuous defects: A reappraisal

    Science.gov (United States)

    Kleman, M.; Friedel, J.

    2008-01-01

    Disclinations were first observed in mesomorphic phases. They were later found relevant to a number of ill-ordered condensed-matter media involving continuous symmetries or frustrated order. Disclinations also appear in polycrystals at the edges of grain boundaries; but they are of limited interest in solid single crystals, where they can move only by diffusion climb and, owing to their large elastic stresses, mostly appear in close pairs of opposite signs. The relaxation mechanisms associated with a disclination in its creation, motion, and change of shape involve an interplay with continuous or quantized dislocations and/or continuous disclinations. These are attached to the disclinations or are akin to Nye’s dislocation densities, which are particularly well suited for consideration here. The notion of an extended Volterra process is introduced, which takes these relaxation processes into account and covers different situations where this interplay takes place. These concepts are illustrated by a variety of applications in amorphous solids, mesomorphic phases, and frustrated media in their curved habit space. These often involve disclination networks with specific node conditions. The powerful topological theory of line defects considers only defects stable against any change of boundary conditions or relaxation processes compatible with the structure considered. It can be seen as a simplified case of the approach considered here, particularly suited for media of high plasticity or/and complex structures. It cannot analyze the dynamical properties of defects nor the elastic constants involved in their static properties; topological stability cannot guarantee energetic stability, and sometimes cannot distinguish finer details of the structure of defects.

  14. Defect studies of H+ implanted niobium

    Czech Academy of Sciences Publication Activity Database

    Prochazka, I.; Čížek, J.; Havránek, Vladimír; Anwand, W.

    2015-01-01

    Roč. 645, SI1 (2015), s. 69-71 ISSN 0925-8388. [14th International Symposium on Metal-Hydrogen Systems (MH). Salford, 20.07.2014-25.07.2014] R&D Projects: GA MŠk LM2011019 Institutional support: RVO:61389005 Keywords : Niobium * Hydrogen * defects * Positron annihilation Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.014, year: 2015

  15. Mobile myelographic filling defects: Spinal cysticercosis

    Energy Technology Data Exchange (ETDEWEB)

    Savoiardo, M.; Cimino, C.; Passerini, A.; La Mantia, L.

    1986-03-01

    Cysticercosis usually affects the brain and is easily demonstrated by CT. Spinal cysticercosis is much rarer and is usually diagnosed only at surgery. Myelographic demonstration of multiple rounded filling defects, some of which were mobile, allowed diagnosis of spinal extramedullary cysticercosis in an unsuspected case. The literature on spinal cysticercosis is briefly reviewed. Diagnosis is important in view of the recent development of medical treatment.

  16. Neutron scattering from a substitutional mass defect

    International Nuclear Information System (INIS)

    Williams, R.D.; Lovesey, S.W.

    1985-06-01

    The dynamic structure factor is calculated for a low concentration of light mass scatterers substituted in a cubic crystal matrix. A new numerical method for the exact calculation is demonstrated. A local density of states for the low momentum transfer limit, and the shifts and widths of the oscillator peaks in the high momentum transfer limit are derived. The limitations of an approximation which decouples the defect from the lattice is discussed. (author)

  17. Vision Algorithms Catch Defects in Screen Displays

    Science.gov (United States)

    2014-01-01

    Andrew Watson, a senior scientist at Ames Research Center, developed a tool called the Spatial Standard Observer (SSO), which models human vision for use in robotic applications. Redmond, Washington-based Radiant Zemax LLC licensed the technology from NASA and combined it with its imaging colorimeter system, creating a powerful tool that high-volume manufacturers of flat-panel displays use to catch defects in screens.

  18. Identifying subsurface detachment defects by acoustic tracing

    Czech Academy of Sciences Publication Activity Database

    Sklodowski, R.; Drdácký, Miloš; Sklodowski, M.

    2013-01-01

    Roč. 56, June (2013), s. 56-64 ISSN 0963-8695 R&D Projects: GA ČR(CZ) GBP105/12/G059 Institutional support: RVO:68378297 Keywords : acoustic excitation * plaster detachment defects * frequency response * inspection systems * signal processing Subject RIV: JN - Civil Engineering Impact factor: 1.717, year: 2013 http://www.sciencedirect.com/science/article/pii/S0963869513000303

  19. A device for displaying defects in concrete

    International Nuclear Information System (INIS)

    Zouboff, Vadim; Darnault, Claude; Leloup, J.-C.

    1973-01-01

    The device comprises a common gamma source, located on one side of the concrete block to be examined on the opposite side, a detecting unit comprising a collimator and a photo-multiplier detector connected to a display unit and moving along rails parallel to the concrete block face. That device is used for displaying concrete defects in particular injection deficiencies in the pre-stress sheaths of concrete used for the building of bridges or tunnels [fr

  20. Management of penile defects: a review.

    Science.gov (United States)

    Guizhong, Li; Feng, He; Guangling, Huang; Libo, Man; Kun, Liu; Yuming, Shen

    2012-06-01

    Penile amputation is a rare injury. Although, in principle, penile replantation can be performed using a variety of methods, few, if any, standardized procedures exist to deal with this medical emergency. The value of the various microsurgical techniques for replantation of the penis remains uncertain. This article provides a review of the management of penile defects and complications. Thieme Medical Publishers 333 Seventh Avenue, New York, NY 10001, USA.