WorldWideScience

Sample records for understanding dopant-sensitized oxides

  1. Model of dopant action in oxide cathodes

    International Nuclear Information System (INIS)

    Engelsen, Daniel den; Gaertner, Georg

    2005-01-01

    The paper describes an electrochemical model, which largely explains the formation of Ba in the oxide cathode at activation and normal operation. In a non-doped oxide cathode electrolysis of BaO is, besides the exchange reaction from the activators in the cathode nickel, an important source of Ba. By doping with rare earth oxides the conductivity of the oxide layer increases, which implies that the potential difference during current drawing over the oxide layer becomes lower and electrolysis of BaO is suppressed. This implies that the part of the electronic conductivity of the (Ba,Sr)O layer induced by the dopants also controls the sensitivity for poisoning: the higher the dopant level, the larger the sensitivity for poisoning. Furthermore, the suppression of electrolysis during normal operation largely explains why doped oxide cathodes have a better life performance than non-doped cathodes. Finally a hypothesis on the enhancement of sintering upon doping is presented

  2. Using Dopants to Tune Oxygen Vacancy Formation in Transition Metal Oxide Resistive Memory.

    Science.gov (United States)

    Jiang, Hao; Stewart, Derek A

    2017-05-17

    Introducing dopants is an important way to tailor and improve electronic properties of transition metal oxides used as high-k dielectric thin films and resistance switching layers in leading memory technologies, such as dynamic and resistive random access memory (ReRAM). Ta 2 O 5 has recently received increasing interest because Ta 2 O 5 -based ReRAM demonstrates high switching speed, long endurance, and low operating voltage. However, advances in optimizing device characteristics with dopants have been hindered by limited and contradictory experiments in this field. We report on a systematic study on how various metal dopants affect oxygen vacancy formation in crystalline and amorphous Ta 2 O 5 from first principles. We find that isoelectronic dopants and weak n-type dopants have little impact on neutral vacancy formation energy and that p-type dopants can lower the formation energy significantly by introducing holes into the system. In contrast, n-type dopants have a deleterious effect and actually increase the formation energy for charged oxygen vacancies. Given the similar doping trend reported for other binary transition metal oxides, this doping trend should be universally valid for typical binary transition metal oxides. Based on this guideline, we propose that p-type dopants (Al, Hf, Zr, and Ti) can lower the forming/set voltage and improve retention properties of Ta 2 O 5 ReRAM.

  3. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

    International Nuclear Information System (INIS)

    Witczak, Steven C.; Winokur, Peter S.; Lacoe, Ronald C.; Mayer, Donald C.

    2000-01-01

    An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage (C-V) measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with 60 Co γ-rays at 100 C and zero bias, where the dopant deactivation is significant

  4. Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

    Science.gov (United States)

    Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

    2004-10-01

    Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

  5. Characteristics of titanium oxide memristor with coexistence of dopant drift and a tunnel barrier

    International Nuclear Information System (INIS)

    Tian Xiao-Bo; Xu Hui

    2014-01-01

    The recent published experimental data of titanium oxide memristor devices which are tested under the same experimental conditions exhibit the strange instability and complexity of these devices. Such undesired characteristics preclude the understanding of the device conductive processes and the memristor-based practical applications. The possibility of the coexistence of dopant drift and tunnel barrier conduction in a memristor provides preliminary explanations for the undesired characteristics. However, current research lacks detailed discussion about the coexistence case. In this paper, dopant drift and tunnel barrier-based theories are first analyzed for studying the relations between parameters and physical variables which affect characteristics of memristors, and then the influences of each parameter change on the conductive behaviors in the single and coexistence cases of the two mechanisms are simulated and discussed respectively. The simulation results provide further explanations of the complex device conduction. Theoretical methods of eliminating or reducing the coexistence of the two mechanisms are proposed, in order to increase the stability of the device conduction. This work also provides the support for optimizing the fabrications of memristor devices with excellent performance

  6. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

    International Nuclear Information System (INIS)

    Saleh, Navid B.; Milliron, Delia J.; Aich, Nirupam; Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo

    2016-01-01

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

  7. Importance of doping, dopant distribution, and defects on electronic band structure alteration of metal oxide nanoparticles: Implications for reactive oxygen species

    Energy Technology Data Exchange (ETDEWEB)

    Saleh, Navid B., E-mail: navid.saleh@utexas.edu [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States); Milliron, Delia J. [McKetta Department of Chemical Engineering, University of Texas, Austin, TX 78712 (United States); Aich, Nirupam [Department of Civil, Structural and Environmental Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260 (United States); Katz, Lynn E.; Liljestrand, Howard M.; Kirisits, Mary Jo [Department of Civil, Architectural, and Environmental Engineering, University of Texas, Austin, TX 78712 (United States)

    2016-10-15

    Metal oxide nanoparticles (MONPs) are considered to have the potency to generate reactive oxygen species (ROS), one of the key mechanisms underlying nanotoxicity. However, the nanotoxicology literature demonstrates a lack of consensus on the dominant toxicity mechanism(s) for a particular MONP. Moreover, recent literature has studied the correlation between band structure of pristine MONPs to their ability to introduce ROS and thus has downplayed the ROS-mediated toxicological relevance of a number of such materials. On the other hand, material science can control the band structure of these materials to engineer their electronic and optical properties and thereby is constantly modulating the pristine electronic structure. Since band structure is the fundamental material property that controls ROS-producing ability, band tuning via introduction of dopants and defects needs careful consideration in toxicity assessments. This commentary critically evaluates the existing material science and nanotoxicity literature and identifies the gap in our understanding of the role of important crystal structure features (i.e., dopants and defects) on MONPs' electronic structure alteration as well as their ROS-generation capability. Furthermore, this commentary provides suggestions on characterization techniques to evaluate dopants and defects on the crystal structure and identifies research needs for advanced theoretical predictions of their electronic band structures and ROS-generation abilities. Correlation of electronic band structure and ROS will not only aid in better mechanistic assessment of nanotoxicity but will be impactful in designing and developing ROS-based applications ranging from water disinfection to next-generation antibiotics and even cancer therapeutics. - Highlights: • Metal oxide nanoparticles (MONPs) produce reactive oxygen species (ROS) • Band structure of pristine MONPs is different than those with dopants/defects • Dopants/defects modulate

  8. Physical properties of high-Tc superconducting oxides. Modification of tc using organic dopants. Final report. Proprietes physiques d'oxydes supraconducteurs a haute Tc. Modification de tc sous l'effet de dopants organiques

    Energy Technology Data Exchange (ETDEWEB)

    Brau, A

    1993-01-01

    An attempt was made to significantly modify the Tc transition temperature of certain copper-based superconducting oxides by introducing organic or mineral dopants, and to study the mobility of 300K-carriers in crystallized tallium-base superconducting oxides. Since the critical transition temperature of superconducting oxides is highly influenced by the density of the free carriers they contain, the authors tried making superconducting powders react with either an organic electron acceptor or a mineral compound. The goal was to increase the density of the holes by altering the copper's degree of oxidation. Their preparatory work showed a direct charge-transfer reaction between the electron-donor copper and the acceptor TCNQ and studied the degree to which the electron acceptor can alter the copper's oxidation. Initial results also showed that dopants can affect superconducting Tc and the course of R(T) curves.

  9. Effects of Lithium Dopant on Size and Morphology of Magnesium Oxide Nano powders

    International Nuclear Information System (INIS)

    Mohd Sufri Mastuli; Siti Nur Hazlinda Hasbu; Noraziahwati Ibrahim; Mohd Azizi Nawawi; Mohd Sufri Mastuli

    2014-01-01

    Lithium doped of magnesium oxide powders have been synthesized using the sol-gel method with magnesium acetate tetrahydrate, oxalic acid dihydrate and lithium acetate dihydrate used as the starting materials. The dried sol-gel products were calcined at 950 degree Celsius for 36 h to form the Li doped-MgO samples. The calcined samples were characterized using X-Ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). The present work is investigated the effect of lithium ion on the band gap energy of studied samples. The band gap energies were obtained from a Tauc plot that drawn based on absorption edge of each sample that measured using a UV-Vis spectrophotometer. It is found that the doped and undoped MgO samples showed a slightly different in their band gap energies. The lithium ion that present in the MgO as a dopant affects the crystallite size and morphology of the final products. Our study shows that the lithium dopant can modified optical properties of the metal oxide which to be beneficial in some industrial applications. (author)

  10. Non-metallic dopant modulation of conductivity in substoichiometric tantalum pentoxide: A first-principles study

    Science.gov (United States)

    Bondi, Robert J.; Fox, Brian P.; Marinella, Matthew J.

    2017-06-01

    We apply density-functional theory calculations to predict dopant modulation of electrical conductivity (σo) for seven dopants (C, Si, Ge, H, F, N, and B) sampled at 18 quantum molecular dynamics configurations of five independent insertion sites into two (high/low) baseline references of σo in amorphous Ta2O5, where each reference contains a single, neutral O vacancy center (VO0). From this statistical population (n = 1260), we analyze defect levels, physical structure, and valence charge distributions to characterize nanoscale modification of the atomistic structure in local dopant neighborhoods. C is the most effective dopant at lowering Ta2Ox σo, while also exhibiting an amphoteric doping behavior by either donating or accepting charge depending on the host oxide matrix. Both B and F robustly increase Ta2Ox σo, although F does so through elimination of Ta high charge outliers, while B insertion conversely creates high charge O outliers through favorable BO3 group formation, especially in the low σo reference. While N applications to dope and passivate oxides are prevalent, we found that N exacerbates the stochasticity of σo we sought to mitigate; sensitivity to the N insertion site and some propensity to form N-O bond chemistries appear responsible. We use direct first-principles predictions of σo to explore feasible Ta2O5 dopants to engineer improved oxides with lower variance and greater repeatability to advance the manufacturability of resistive memory technologies.

  11. Influence of nitrogen dopants on N-doped TiO2 electrodes and their applications in dye-sensitized solar cells

    International Nuclear Information System (INIS)

    Guo Wei; Shen Yihua; Boschloo, Gerrit; Hagfeldt, Anders; Ma Tingli

    2011-01-01

    Highlights: → Three different types of nanocrystalline N-doped TiO 2 synthesized by several nitrogen dopants. → N-doped DSCs achieves a high conversion efficiency of 8.32%. → Ammonia acts as good nitrogen dopants. → Enhanced photocurrent of ca. 36% in N-doped DSCs. → Less charge are needed to get a high open-circuit voltage in N-doped films. - Abstract: Three different types of nanocrystalline, N-doped TiO 2 electrodes were synthesized using several nitrogen dopants through wet methods. The obtained nanocrystalline, N-doped TiO 2 electrodes possessed different crystallite sizes, surface areas, and N-doping amounts. Characterizations were performed to reveal the nitrogen-doping processes for the wet methods using ammonia, urea, and triethylamine as the nitrogen dopants. Additionally, a high conversion efficiency of 8.32% was achieved by the dye-sensitized solar cells, based on the N-doped TiO 2 electrodes. For instance, in comparison with the commercial P25 (5.76%) and pure anatase TiO 2 electrodes (7.14%), significant improvements (44% and 17%, respectively) in the efficiencies were obtained. The findings also indicated that the ammonia nitrogen dopant was more efficient than other two nitrogen dopants. The electron transports, electron lifetimes, and charge recombination in the dye-sensitized N-doped TiO 2 solar cells also differed from those in the pure TiO 2 -based dye-sensitized solar cells (DSCs). Specifically, an enhanced photocurrent of ca. 36% in N-doped DSCs resulted from the synergistic effects of the high dye uptake and the efficient electron transport. Moreover, the relationship between charge and voltage revealed that less charge was needed to get a high open-circuit voltage in the N-doping films.

  12. MOS Capacitance—Voltage Characteristics II. Sensitivity of Electronic Trapping at Dopant Impurity from Parameter Variations

    International Nuclear Information System (INIS)

    Jie Binbin; Sah Chihtang

    2011-01-01

    Low-frequency and high-frequency Capacitance—Voltage (C—V) curves of Metal—Oxide—Semiconductor Capacitors (MOSC), including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from > 0.01C OX to > 10C OX . Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, N DD , the ground state electron trapping energy level depth measured from the conduction band edge, E C –E D , the degeneracy of the trapped electron at the ground state, g D , the device temperature, T, and the gate oxide thickness, x OX . (invited papers)

  13. Dopant profile engineering of advanced Si MOSFET's using ion implantation

    International Nuclear Information System (INIS)

    Stolk, P.A.; Ponomarev, Y.V.; Schmitz, J.; Brandenburg, A.C.M.C. van; Roes, R.; Montree, A.H.; Woerlee, P.H.

    1999-01-01

    Ion implantation has been used to realize non-uniform, steep retrograde (SR) dopant profiles in the active channel region of advanced Si MOSFET's. After defining the transistor configuration, SR profiles were formed by dopant implantation through the polycrystalline Si gate and the gate oxide (through-the-gate, TG, implantation). The steep nature of the as-implanted profile was retained by applying rapid thermal annealing for dopant activation and implantation damage removal. For NMOS transistors, TG implantation of B yields improved transistor performance through increased carrier mobility, reduced junction capacitances, and reduced susceptibility to short-channel effects. Electrical measurements show that the gate oxide quality is not deteriorated by the ion-induced damage, demonstrating that transistor reliability is preserved. For PMOS transistors, TG implantation of P or As leads to unacceptable source/drain junction broadening as a result of transient enhanced dopant diffusion during thermal activation

  14. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    International Nuclear Information System (INIS)

    Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rusop, Mohamad; Rahman, S. A.

    2016-01-01

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10"3 Ωcm"−"1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  15. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  16. Tuning Nanocrystal Surface Depletion by Controlling Dopant Distribution as a Route Toward Enhanced Film Conductivity

    Science.gov (United States)

    Staller, Corey M.; Robinson, Zachary L.; Agrawal, Ankit; Gibbs, Stephen L.; Greenberg, Benjamin L.; Lounis, Sebastien D.; Kortshagen, Uwe R.; Milliron, Delia J.

    2018-05-01

    Electron conduction through bare metal oxide nanocrystal (NC) films is hindered by surface depletion regions resulting from the presence of surface states. We control the radial dopant distribution in tin-doped indium oxide (ITO) NCs as a means to manipulate the NC depletion width. We find in films of ITO NCs of equal overall dopant concentration that those with dopant-enriched surfaces show decreased depletion width and increased conductivity. Variable temperature conductivity data shows electron localization length increases and associated depletion width decreases monotonically with increased density of dopants near the NC surface. We calculate band profiles for NCs of differing radial dopant distributions and, in agreement with variable temperature conductivity fits, find NCs with dopant-enriched surfaces have narrower depletion widths and longer localization lengths than those with dopant-enriched cores. Following amelioration of NC surface depletion by atomic layer deposition of alumina, all films of equal overall dopant concentration have similar conductivity. Variable temperature conductivity measurements on alumina-capped films indicate all films behave as granular metals. Herein, we conclude that dopant-enriched surfaces decrease the near-surface depletion region, which directly increases the electron localization length and conductivity of NC films.

  17. Dopant distributions in n-MOSFET structure observed by atom probe tomography

    International Nuclear Information System (INIS)

    Inoue, K.; Yano, F.; Nishida, A.; Takamizawa, H.; Tsunomura, T.; Nagai, Y.; Hasegawa, M.

    2009-01-01

    The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

  18. Dopant distributions in n-MOSFET structure observed by atom probe tomography.

    Science.gov (United States)

    Inoue, K; Yano, F; Nishida, A; Takamizawa, H; Tsunomura, T; Nagai, Y; Hasegawa, M

    2009-11-01

    The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted.

  19. The effect of Mg dopants on magnetic and structural properties of iron oxide and zinc ferrite thin films

    Science.gov (United States)

    Saritaş, Sevda; Ceviz Sakar, Betul; Kundakci, Mutlu; Yildirim, Muhammet

    2018-06-01

    Iron oxide thin films have been obtained significant interest as a material that put forwards applications in photovoltaics, gas sensors, biosensors, optoelectronic and especially in spintronics. Iron oxide is one of the considerable interest due to its chemical and thermal stability. Metallic ion dopant influenced superexchange interactions and thus changed the structural, electrical and magnetic properties of the thin film. Mg dopped zinc ferrite (Mg:ZnxFe3-xO4) crystal was used to avoid the damage of Fe3O4 (magnetite) crystal instead of Zn2+ in this study. Because the radius of the Mg2+ ion in the A-site (tetrahedral) is almost equal to that of the replaced Fe3+ ion. Inverse-spinel structure in which oxygen ions (O2-) are arranged to form a face-centered cubic (FCC) lattice where there are two kinds of sublattices, namely, A-site and B-site (octahedral) interstitial sites and in which the super exchange interactions occur. In this study, to increase the saturation of magnetization (Ms) value for iron oxide, inverse-spinal ferrite materials have been prepared, in which the iron oxide was doped by multifarious divalent metallic elements including Zn and Mg. Triple and quaternary; iron oxide and zinc ferrite thin films with Mg metal dopants were grown by using Spray Pyrolysis (SP) technique. The structural, electrical and magnetic properties of Mg dopped iron oxide (Fe2O3) and zinc ferrite (ZnxFe3-xO4) thin films have been investigated. Vibrating Sample Magnetometer (VSM) technique was used to study for the magnetic properties. As a result, we can say that Mg dopped iron oxide thin film has huge diamagnetic and of Mg dopped zinc ferrite thin film has paramagnetic property at bigger magnetic field.

  20. Effects of small-angle mistilts on dopant visibility in ADF-STEM imaging of nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Held, Jacob T.; Duncan, Samuel; Mkhoyan, K. Andre, E-mail: mkhoyan@umn.edu

    2017-06-15

    Highlights: • ADF-STEM is powerful technique for 3D location of substitutionally doped atoms. • The effects of specimen mistilt on ADF-STEM imaging of doped atoms are evaluated. • Visibility changes over 0–30 mrad mistilts are large enough to preclude 3D dopant location. • Dopant visibility is a strong function of specimen mistilt and cannot be ignored. - Abstract: Quantitative ADF-STEM imaging paired with image simulations has proven to be a powerful technique for determining the three dimensional location of substitutionally doped atoms in thin films. Expansion of this technique to lightly-doped nanocrystals requires an understanding of the influence of specimen mistilt on dopant visibility due to the difficulty of accurate orientation determination in such systems as well as crystal movement under the beam. In this study, the effects of specimen mistilt on ADF-STEM imaging are evaluated using germanium-doped silicon nanocrystals as model systems. It is shown that dopant visibility is a strong function of specimen mistilt, and the accuracy of specimen orientation is an important factor in the analysis of three-dimensional dopant location, but the sensitivity to mistilt can be weakened by increasing the STEM probe convergence angle and optimizing ADF detector inner angle.

  1. Ab initio calculation of chromium oxide containing Ti dopant

    International Nuclear Information System (INIS)

    Maldonado, Frank; Novillo, Corina; Stashans, Arvids

    2012-01-01

    Highlights: ► Microstructure changes in chromium oxide due to the Ti doping. ► Discovery of magnetism in Ti-doped α-Cr 2 O 3 crystal. ► Explanation of the origin of n-type electrical conductivity. ► Detailed analysis of electronic properties and density of states. ► As to authors’ knowledge, Ti-doped crystal is studied for the first time by the DFT. - Abstract: First-principles computations based on the density functional theory within the generalised gradient approximation and introduced intra-atomic interaction term for strongly correlated electrons (DFT + U method) has been used in this work. Ti impurity doping in the α-Cr 2 O 3 crystal has been carried out considering single defect model within the periodic crystalline structure. Atomic displacements, Bader charges on atoms have been computed showing that Ti dopant converts the chemical bonding in its neighbourhood into more ionic one. The defect-local microstructure is such as there exist general tendency of atomic rearrangements away with respect to the Ti imperfection. It is found that defect incorporation produces some local changes upon the band structure of the material and also induces a metallic state. That implies n-type electrical conductivity in the Ti-doped α-Cr 2 O 3 crystals and relates our work directly to a number of experimental studies in this area. Our results provide evidence over change in magnetic moments in the vicinity of defect, which means that the chromium oxide doped with Ti impurity might not act as an antiferromagnetic substance.

  2. Understanding and controlling transient enhanced dopant diffusion in silicon

    International Nuclear Information System (INIS)

    Stolk, P.A.; Gossmann, H.J.; Eaglesham, D.J.; Jacobson, D.C.; Poate, J.M.; Luftman, H.S.

    1995-01-01

    Implanted B and P dopants in Si exhibit transient enhanced diffusion (TED) during initial annealing which arises from the excess interstitials generated by the implant. In order to study the mechanisms of TED, the authors have used B doping marker layers in Si to probe the injection of interstitials from near-surface, non-amorphizing Si implants during annealing. The in-diffusion of interstitials is limited by trapping at impurities and has an activation energy of ∼3.5 eV. Substitutional C is the dominant trapping center with a binding energy of 2--2.5 eV. The high interstitial supersaturation adjacent to the implant damage drives substitutional B into metastable clusters at concentrations below the B solid solubility limit. Transmission electron microscopy shows that the interstitials driving TED are emitted from {311} defect clusters in the damage region at a rate which also exhibits an activation energy of 3.6 eV. The population of excess interstitials is strongly reduced by incorporating substitutional C in Si to levels of ∼10 19 /cm 3 prior to ion implantation. This provides a promising method for suppressing TED, thus enabling shallow junction formation in future Si devices through dopant implantation

  3. A molecular dynamics study on the oxygen diffusion in doped fluorites: the effect of the dopant distribution

    Energy Technology Data Exchange (ETDEWEB)

    Tarancon, A. [M2E/XaRMAE/IREC, Department of Advanced Materials for Energy Applications, Catalonia Institute for Energy Research (IREC), Josep Pla 2, Torre 2, B2, 08019 Barcelona (Spain); Morata, A.; Peiro, F. [MIND/XaRMAE/IN2UB, Department of Electronics, University of Barcelona, Marti i Franques 1, 08028 Barcelona (Spain); Dezanneau, G. [Laboratoire Structures, Proprietes et Modelisation des Solides, Grande Voie des Vignes, Ecole Centrale Paris, F-92295 Chatenay-Malabry Cedex (France)

    2011-02-15

    The effect of the dopant distribution on the oxygen diffusion in doped fluorites typically used for solid oxide fuel cells electrolyte applications has been analysed by using molecular dynamics simulations. The oxygen mass transport in both yttria-stabilized zirconia (YSZ) and gadolinia-doped ceria has been studied and compared in the range of temperatures between 1,159 and 1,959 K. A new methodology based on the analysis of local environments is used to describe the diffusion process at an atomic scale. Preferred vacancy migration pathways, most suitable conduction models, energy landscapes and jump efficiency have been detailed for each material. Finally, a particular case of non-random distribution of dopants in YSZ is presented in order to quantitatively evaluate the effect of the dopant pattern on the mass transport properties and the potential of the methodology developed here for understanding and foreseeing real configurations at the nanoscale. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Ab initio calculation of chromium oxide containing Ti dopant

    Energy Technology Data Exchange (ETDEWEB)

    Maldonado, Frank [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Novillo, Corina [Escuela de Ingenieria Quimica, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Stashans, Arvids, E-mail: arvids@utpl.edu.ec [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador)

    2012-01-17

    Highlights: Black-Right-Pointing-Pointer Microstructure changes in chromium oxide due to the Ti doping. Black-Right-Pointing-Pointer Discovery of magnetism in Ti-doped {alpha}-Cr{sub 2}O{sub 3} crystal. Black-Right-Pointing-Pointer Explanation of the origin of n-type electrical conductivity. Black-Right-Pointing-Pointer Detailed analysis of electronic properties and density of states. Black-Right-Pointing-Pointer As to authors' knowledge, Ti-doped crystal is studied for the first time by the DFT. - Abstract: First-principles computations based on the density functional theory within the generalised gradient approximation and introduced intra-atomic interaction term for strongly correlated electrons (DFT + U method) has been used in this work. Ti impurity doping in the {alpha}-Cr{sub 2}O{sub 3} crystal has been carried out considering single defect model within the periodic crystalline structure. Atomic displacements, Bader charges on atoms have been computed showing that Ti dopant converts the chemical bonding in its neighbourhood into more ionic one. The defect-local microstructure is such as there exist general tendency of atomic rearrangements away with respect to the Ti imperfection. It is found that defect incorporation produces some local changes upon the band structure of the material and also induces a metallic state. That implies n-type electrical conductivity in the Ti-doped {alpha}-Cr{sub 2}O{sub 3} crystals and relates our work directly to a number of experimental studies in this area. Our results provide evidence over change in magnetic moments in the vicinity of defect, which means that the chromium oxide doped with Ti impurity might not act as an antiferromagnetic substance.

  5. Study of Liquid Argon Dopants for LHC Hadron Calorimetry

    CERN Multimedia

    2002-01-01

    Hadron calorimetry based on the Liquid Argon Ionisation Chamber technique is one of the choice techniques for LHC-experimentation. A systematic study of the effect of selected dopants on Liquid Argon (LAr) will be carried out with the aim to achieve an improvement on: \\item (i)~``Fast Liquid Argon'' search and study of dopants to increase the drift velocity. It has been already shown that CH&sub4. added at a fraction of one percent increases the drift velocity by a factor of two or more. \\item (ii)~``Compensated Liquid Argon'' search and study of dopants to increase the response to densely ionising particles, resulting in improved compensation, such as photosensitive dopants. \\end{enumerate}\\\\ \\\\ Monitoring of the parameters involved in understanding the response of a calorimeter is essential. In case of doped LAr, the charge yield, the non-saturated drift velocity and the electron lifetime in the liquid should be precisely and simultaneously monitored as they all vary with the level of dopant concentrati...

  6. A β-cyclodextrin based binary dopant for polyaniline: Structural, thermal, electrical, and sensing performance

    Energy Technology Data Exchange (ETDEWEB)

    Sen, Tanushree; Mishra, Satyendra [University Institute of Chemical Technology, North Maharashtra University, Jalgaon 425001, Maharashtra (India); Shimpi, Navinchandra G., E-mail: navin_shimpi@rediffmail.com [Department of Chemistry, University of Mumbai, Kalina, Mumbai 400098, Maharashtra (India)

    2017-06-15

    Highlights: • A binary dopant based on β-cyclodextrin has been proposed for PANI. • The binary dopant provided long term stability to electrically conducting PANI. • The β-cyclodextrin based binary dopant rendered PANI sensitive towards CO at RT. - Abstract: The effect of hydrochloric acid/β-cyclodextrin (HCl/β-CD) binary dopant on the morphological, thermal, electrical, and sensing properties of PANI was investigated and compared with those of the conventionally doped PANI. The PANI samples were characterized using FTIR, UV–Vis, {sup 1}H NMR, and FESEM. Significant changes were observed in the structural, thermal, and electrical character of PANI doped with the HCl/β-CD binary dopant. A higher doping level was obtained for the PANI-binary dopant system, as observed from its {sup 1}H NMR spectra. Moreover, the binary dopant imparted long-term stability to the sensor in its conductive form. In addition, the PANI-binary dopant system exhibited a significantly high gas response towards carbon monoxide gas at room temperature.

  7. Transition Metal Dopants Essential for Producing Ferromagnetism in Metal Oxide Nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Lydia; Thurber, Aaron P.; Anghel, Josh; Sabetian, Maryam; Engelhard, Mark H.; Tenne, D.; Hanna, Charles; Punnoose, Alex

    2010-08-13

    Recent claims that ferromagnetism can be produced in nanoparticles of metal oxides without the presence of transition metal dopants has been refuted in this work by investigating 62 high quality well-characterized nanoparticle samples of both undoped and Fe doped (0-10% Fe) ZnO. The undoped ZnO nanoparticles showed zero or negligible magnetization, without any dependence on the nanoparticle size. However, chemically synthesized Zn₁₋xFexO nanoparticles showed clear ferromagnetism, varying systematically with Fe concentration. Furthermore, the magnetic properties of Zn₁₋xFexO nanoparticles showed strong dependence on the reaction media used to prepare the samples. The zeta potentials of the Zn₁₋xFexO nanoparticles prepared using different reaction media were significantly different, indicating strong differences in the surface structure. Electron paramagnetic resonance studies clearly showed that the difference in the ferromagnetic properties of Zn₁₋xFexO nanoparticles with different surface structures originate from differences in the fraction of the doped Fe³⁺ ions that are coupled ferromagnetically.

  8. Understanding DNA Under Oxidative Stress and Sensitization: The Role of Molecular Modeling

    Directory of Open Access Journals (Sweden)

    Antonio eMonari

    2015-07-01

    Full Text Available DNA is constantly exposed to damaging threats coming from oxidative stress, i.e. from the presence of free radicals and reactive oxygen species. Sensitization from exogenous and endogenous compounds that strongly enhance the frequency of light-induced lesions also plays an important role. The experimental determination of DNA lesions, though a difficult subject, is somehow well established and allows to elucidate even extremely rare DNA lesions. In parallel, molecular modeling has become fundamental to clearly understand the fine mechanisms related to DNA defects induction. Indeed, it offers an unprecedented possibility to get access to an atomistic or even electronic resolution. Ab initio molecular dynamics may also describe the time-evolution of the molecular system and its reactivity. Yet the modeling of DNA (photo-reactions does necessitate elaborate multi-scale methodologies to tackle a damage induction reactivity that takes place in a complex environment. The double-stranded DNA environment is first characterized by a very high flexibility, that dynamical effects are to be taken into account, but also a strongly inhomogeneous electrostatic embedding. Additionally, one aims at capturing more subtle effects, such as the sequence selectivity which is of critical important for DNA damage. The structure and dynamics of the DNA/sensitizers complexes, as well as the photo-induced electron- and energy-transfer phenomena taking place upon sensitization, should be carefully modeled. Finally the factors inducing different repair ratios for different lesions should also be rationalized.In this review we will critically analyze the different computational strategies used to model DNA lesions. A clear picture of the complex interplay between reactivity and structural factors will be sketched. The use of proper multi-scale modeling leads to the in-depth comprehension of DNA lesions mechanism and also to the rational design of new chemo-therapeutic agents.

  9. The interplay between dopants and oxygen vacancies in the magnetism of V-doped TiO2

    KAUST Repository

    Grau-Crespo, Ricardo

    2011-08-03

    Density functional theory calculations indicate that the incorporation of V into Ti lattice positions of rutile TiO2 leads to magnetic V 4 + species, but the extension and sign of the coupling between dopant moments confirm that ferromagnetic order cannot be reached via low-concentration doping in the non-defective oxide. Oxygen vacancies can introduce additional magnetic centres, and we show here that one of the effects of vanadium doping is to reduce the formation energies of these defects. In the presence of both V dopants and O vacancies all the spins tend to align with the same orientation. We conclude that V doping favours the ferromagnetic behaviour of TiO2 not only by introducing spins associated with the dopant centres but also by increasing the concentration of oxygen vacancies with respect to the pure oxide. © 2001 IOP Publishing Ltd.

  10. The interplay between dopants and oxygen vacancies in the magnetism of V-doped TiO2

    KAUST Repository

    Grau-Crespo, Ricardo; Schwingenschlö gl, Udo

    2011-01-01

    Density functional theory calculations indicate that the incorporation of V into Ti lattice positions of rutile TiO2 leads to magnetic V 4 + species, but the extension and sign of the coupling between dopant moments confirm that ferromagnetic order cannot be reached via low-concentration doping in the non-defective oxide. Oxygen vacancies can introduce additional magnetic centres, and we show here that one of the effects of vanadium doping is to reduce the formation energies of these defects. In the presence of both V dopants and O vacancies all the spins tend to align with the same orientation. We conclude that V doping favours the ferromagnetic behaviour of TiO2 not only by introducing spins associated with the dopant centres but also by increasing the concentration of oxygen vacancies with respect to the pure oxide. © 2001 IOP Publishing Ltd.

  11. Two-dimensional dopant profiling by electrostatic force microscopy using carbon nanotube modified cantilevers

    International Nuclear Information System (INIS)

    Chin, S.-C.; Chang, Y.-C.; Chang, C.-S.; Tsong, T T; Hsu, Chen-Chih; Wu, Chih-I; Lin, W-H; Woon, W-Y; Lin, L-T; Tao, H-J

    2008-01-01

    A two-dimensional (2D) dopant profiling technique is demonstrated in this work. We apply a unique cantilever probe in electrostatic force microscopy (EFM) modified by the attachment of a multiwalled carbon nanotube (MWNT). Furthermore, the tip apex of the MWNT was trimmed to the sharpness of a single-walled carbon nanotube (SWNT). This ultra-sharp MWNT tip helps us to resolve dopant features to within 10 nm in air, which approaches the resolution achieved by ultra-high vacuum scanning tunnelling microscopy (UHV STM). In this study, the CNT-probed EFM is used to profile 2D buried dopant distribution under a nano-scale device structure and shows the feasibility of device characterization for sub-45 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors

  12. Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography

    Energy Technology Data Exchange (ETDEWEB)

    Somodi, P.K.; Twitchett-Harrison, A.C.; Midgley, P.A. [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Kardynał, B.E. [Peter Grünberg Institute 9, Forschungszentrum Jülich, D-52425 Jülich (Germany); Barnes, C.H.W. [Department of Physics, University of Cambridge, Madingley Road, Cambridge CB3 0HE (United Kingdom); Dunin-Borkowski, R.E., E-mail: rafaldb@gmail.com [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute 5, Forschungszentrum Jülich, D-52425 Jülich (Germany)

    2013-11-15

    Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p–n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p–n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices. - Highlights: • Finite element simulations are performed to calculate electrostatic dopant potentials in TEM specimens that contain p–n junctions. • The effect of the electrical state of the specimen surface on the projected potential is assessed for equipotential specimen surfaces. • The step in projected potential is always found to be lower than the step in potential in the bulk device. • The step in projected potential is least sensitive to surface state energy for thicker specimens and higher dopant concentrations. • The depletion width measured from the projected potential has a complicated dependence on specimen thickness.

  13. Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography

    International Nuclear Information System (INIS)

    Somodi, P.K.; Twitchett-Harrison, A.C.; Midgley, P.A.; Kardynał, B.E.; Barnes, C.H.W.; Dunin-Borkowski, R.E.

    2013-01-01

    Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p–n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p–n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices. - Highlights: • Finite element simulations are performed to calculate electrostatic dopant potentials in TEM specimens that contain p–n junctions. • The effect of the electrical state of the specimen surface on the projected potential is assessed for equipotential specimen surfaces. • The step in projected potential is always found to be lower than the step in potential in the bulk device. • The step in projected potential is least sensitive to surface state energy for thicker specimens and higher dopant concentrations. • The depletion width measured from the projected potential has a complicated dependence on specimen thickness

  14. Two-dimensional dopant profiling for shallow junctions by TEM and AFM

    International Nuclear Information System (INIS)

    Yoo, K.

    2000-01-01

    The present work concerns the development of the Etch/TEM and Etch/AFM methods to obtain quantitative 2-D dopant profiles for the ultra shallow p-n junctions of the next generation of metal-oxide-semiconductor field effect transistors (MOSFETs). For these methods, thin foil (TEM) or bulk (AFM) cross-sectional specimens were etched using a dopant selective chemical so that local areas of the dopant implanted source/drain (S/D) regions were etched to different depths. The surface topography of the S/D regions was determined from the thickness fringes for the TEM method and by the direct measurement for the AFM method. The local etched depths were converted to etch rates, and these were then converted to corresponding 1-D and 2-D dopant profiles by the experimentally independent etch rate calibration curves. Shallow junction MOSFET samples were designed and fabricated with junction depths 60nm (n + /p), 80nm (n + /p) and 120nm (p + /n) using 0.25μm process technology. A new method using SOG (Spin-on-Glass) contributed to the high quality XTEM thin foil specimens. Controlled stirring of the etchant increased the dopant concentration selectivity and etching consistency. Computer modelling simulated the isotropic etching behaviours, which can introduce the significant error in dopant profiling for shallow and abrupt junction samples. Comprehensive quantitative results enabled the optimum etching time to be determined for the first time. Etch/TEM method gave 1-D dopant profiles that showed good agreement with 1-D Spreading Resistance Probe (SRP) dopant profiles for determining junction depths. 2-D dopant profiles gave L eff , i.e. the shortest lateral distance between the S/D junctions, of major importance for MOSFET performance. Values for L eff of 161, 159 and 123nm were determined from 60, 80 and 120nm junction depth samples respectively, compared with the 215nm MOSFET gate length. The resolution and accuracy of the Etch/TEM method are estimated as 2 and 10nm

  15. Piezoresistive Cantilever Performance-Part I: Analytical Model for Sensitivity.

    Science.gov (United States)

    Park, Sung-Jin; Doll, Joseph C; Pruitt, Beth L

    2010-02-01

    An accurate analytical model for the change in resistance of a piezoresistor is necessary for the design of silicon piezoresistive transducers. Ion implantation requires a high-temperature oxidation or annealing process to activate the dopant atoms, and this treatment results in a distorted dopant profile due to diffusion. Existing analytical models do not account for the concentration dependence of piezoresistance and are not accurate for nonuniform dopant profiles. We extend previous analytical work by introducing two nondimensional factors, namely, the efficiency and geometry factors. A practical benefit of this efficiency factor is that it separates the process parameters from the design parameters; thus, designers may address requirements for cantilever geometry and fabrication process independently. To facilitate the design process, we provide a lookup table for the efficiency factor over an extensive range of process conditions. The model was validated by comparing simulation results with the experimentally determined sensitivities of piezoresistive cantilevers. We performed 9200 TSUPREM4 simulations and fabricated 50 devices from six unique process flows; we systematically explored the design space relating process parameters and cantilever sensitivity. Our treatment focuses on piezoresistive cantilevers, but the analytical sensitivity model is extensible to other piezoresistive transducers such as membrane pressure sensors.

  16. Piezoresistive Cantilever Performance—Part I: Analytical Model for Sensitivity

    Science.gov (United States)

    Park, Sung-Jin; Doll, Joseph C.; Pruitt, Beth L.

    2010-01-01

    An accurate analytical model for the change in resistance of a piezoresistor is necessary for the design of silicon piezoresistive transducers. Ion implantation requires a high-temperature oxidation or annealing process to activate the dopant atoms, and this treatment results in a distorted dopant profile due to diffusion. Existing analytical models do not account for the concentration dependence of piezoresistance and are not accurate for nonuniform dopant profiles. We extend previous analytical work by introducing two nondimensional factors, namely, the efficiency and geometry factors. A practical benefit of this efficiency factor is that it separates the process parameters from the design parameters; thus, designers may address requirements for cantilever geometry and fabrication process independently. To facilitate the design process, we provide a lookup table for the efficiency factor over an extensive range of process conditions. The model was validated by comparing simulation results with the experimentally determined sensitivities of piezoresistive cantilevers. We performed 9200 TSUPREM4 simulations and fabricated 50 devices from six unique process flows; we systematically explored the design space relating process parameters and cantilever sensitivity. Our treatment focuses on piezoresistive cantilevers, but the analytical sensitivity model is extensible to other piezoresistive transducers such as membrane pressure sensors. PMID:20336183

  17. A theoretical study of dopant atom detection and probe behavior in STEM

    Science.gov (United States)

    Mittal, Anudha

    Very detailed information about the atomic and electronic structure of materials can be obtained via atomic-scale resolution scanning transmission electron microscopy (STEM). These experiments reach the limits of current microscopes, which means that optimal experimental design is a key ingredient in success. The step following experiment, extraction of information from experimental data is also complex. Comprehension of experimental data depends on comparison with simulated data and on fundamental understanding of aspects of scattering behavior. The research projects discussed in this thesis are formulated within three large concepts. 1. Usage of simulation to suggest experimental technique for observation of a particular structural feature.. Two specific structural features are explored. One is the characterization of a substitutional dopant atom in a crystal. Annular dark field scanning transmission electron microscope (ADF-STEM) images allow detection of individual dopant atoms in a crystal based on contrast between intensities of doped and non-doped column in the image. The magnitude of the said contrast is heavily influenced by specimen and microscope parameters. Analysis of multislice-based simulations of ADF-STEM images of crystals doped with one substitutional dopant atom for a wide range of crystal thicknesses, types and locations of dopant atom inside the crystal, and crystals with different atoms revealed trends and non-intuitive behaviors in visibility of the dopant atom. The results provide practical guidelines for the optimal experimental setup regarding both the microscope and specimen conditions in order to characterize the presence and location of a dopant atom. Furthermore, the simulations help in recognizing the cases where detecting a single dopant atom via ADF-STEM imaging is not possible. The second is a more specific case of detecting intrinsic twist in MoS2 nanotubes. Objective molecular dynamics simulations coupled with a density

  18. Atom-probe for FinFET dopant characterization

    Energy Technology Data Exchange (ETDEWEB)

    Kambham, A.K., E-mail: kambham@imec.be [K.U.Leuven, Instituut voor Kern-en Stralings fysika, Celestijnenlaan 200D, B-3001, Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Mody, J.; Gilbert, M.; Koelling, S.; Vandervorst, W. [K.U.Leuven, Instituut voor Kern-en Stralings fysika, Celestijnenlaan 200D, B-3001, Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2011-05-15

    With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates on multiple surfaces. The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions of the device. As a result there is a need for new metrology approach/technique to characterize quantitatively the dopant distribution in these devices with nanometer precision in 3D. In recent years, atom probe tomography (APT) has shown its ability to analyze semiconductor and thin insulator materials effectively with sub-nm resolution in 3D. In this paper we will discuss the methodology used to study FinFET-based structures using APT. Whereas challenges and solutions for sample preparation linked to the limited fin dimensions already have been reported before, we report here an approach to prepare fin structures for APT, which based on their processing history (trenches filled with Si) are in principle invisible in FIB and SEM. Hence alternative solutions in locating and positioning them on the APT-tip are presented. We also report on the use of the atom probe results on FinFETs to understand the role of different dopant implantation angles (10{sup o} and 45{sup o}) when attempting conformal doping of FinFETs and provide a quantitative comparison with alternative approaches such as 1D secondary ion mass spectrometry (SIMS) and theoretical model values. -- Research highlights: {yields} This paper provides the information on how to characterize the FinFET devices using atom probe tomography (APT). {yields} Importance of this work is to assess the performance of these devices at different processing conditions by extracting the compositional profiles. {yields} The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions

  19. Atom-probe for FinFET dopant characterization

    International Nuclear Information System (INIS)

    Kambham, A.K.; Mody, J.; Gilbert, M.; Koelling, S.; Vandervorst, W.

    2011-01-01

    With the continuous shrinking of transistors and advent of new transistor architectures to keep in pace with Moore's law and ITRS goals, there is a rising interest in multigate 3D-devices like FinFETs where the channel is surrounded by gates on multiple surfaces. The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions of the device. As a result there is a need for new metrology approach/technique to characterize quantitatively the dopant distribution in these devices with nanometer precision in 3D. In recent years, atom probe tomography (APT) has shown its ability to analyze semiconductor and thin insulator materials effectively with sub-nm resolution in 3D. In this paper we will discuss the methodology used to study FinFET-based structures using APT. Whereas challenges and solutions for sample preparation linked to the limited fin dimensions already have been reported before, we report here an approach to prepare fin structures for APT, which based on their processing history (trenches filled with Si) are in principle invisible in FIB and SEM. Hence alternative solutions in locating and positioning them on the APT-tip are presented. We also report on the use of the atom probe results on FinFETs to understand the role of different dopant implantation angles (10 o and 45 o ) when attempting conformal doping of FinFETs and provide a quantitative comparison with alternative approaches such as 1D secondary ion mass spectrometry (SIMS) and theoretical model values. -- Research highlights: → This paper provides the information on how to characterize the FinFET devices using atom probe tomography (APT). → Importance of this work is to assess the performance of these devices at different processing conditions by extracting the compositional profiles. → The performance of these devices depends on the dimensions and the spatial distribution of dopants in source/drain regions. → In this publication we

  20. Mechanism of dopant-vacancy association in α-quartz GeO2

    KAUST Repository

    Wang, Hao; Chroneos, Alexander; Schwingenschlö gl, Udo

    2013-01-01

    Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in α-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy.

  1. Mechanism of dopant-vacancy association in α-quartz GeO2

    KAUST Repository

    Wang, Hao

    2013-02-28

    Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in α-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy.

  2. Tilts, dopants, vacancies and non-stoichiometry: Understanding and designing the properties of complex solid oxide perovskites from first principles

    Science.gov (United States)

    Bennett, Joseph W.

    Perovskite oxides of formula ABO3 have a wide range of structural, electrical and mechanical properties, making them vital materials for many applications, such as catalysis, ultrasound machines and communication devices. Perovskite solid solutions with high piezoelectric response, such as ferroelectrics, are of particular interest as they can be employed as sensors in SONAR devices. Ferroelectric materials are unique in that their chemical and electrical properties can be non-invasively and reversibly changed, by switching the bulk polarization. This makes ferroelectrics useful for applications in non-volatile random access memory (NVRAM) devices. Perovskite solid solutions with a lower piezoelectric response than ferroelectrics are important for communication technology, as they function well as electroceramic capacitors. Also of interest is how these materials act as a component in a solid oxide fuel cell, as they can function as an efficient source of energy. Altering the chemical composition of these solid oxide materials offers an opportunity to change the desired properties of the final ceramic, adding a degree of flexibility that is advantageous for a variety of applications. These solid oxides are complex, sometimes disordered systems that are a challenge to study experimentally. However, as it is their complexity which produces favorable properties, highly accurate modeling which captures the essential features of the disordered structure is necessary to explain the behavior of current materials and predict favorable compositions for new materials. Methodological improvements and faster computer speeds have made first-principles and atomistic calculations a viable tool for understanding these complex systems. Offering a combination of accuracy and computational speed, the density functional theory (DFT) approach can reveal details about the microscopic structure and interactions of complex systems. Using DFT and a combination of principles from both

  3. Sensitivity of measured steam oxidation kinetics to atmospheric control and impurities

    Energy Technology Data Exchange (ETDEWEB)

    Sooby Wood, E., E-mail: sooby@lanl.gov [Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM (United States); Terrani, K.A. [Nuclear Fuels Materials Group, Oak Ridge National Laboratory, Oak Ridge, TN (United States); Nelson, A.T. [Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM (United States)

    2016-08-15

    The most direct means of improving the ability of water cooled reactors to withstand excessive cladding oxidation during a loss of coolant accident is to either modify or replace zirconium cladding. It is important to understand what level of agreement is to be expected as a function of systematic differences in steam oxidation testing techniques and instrumentation among testing facilities. The present study was designed to assess the sensitivities of some of the current and proposed reactor cladding materials. Steam oxidation sensitivity of Zircaloy-2, FeCrAl and Mo to O{sub 2} impurities in steam were examined. It was shown that the effect of O{sub 2} impurities is negligible for the two former materials while significant in the case of Mo.

  4. Enhancing photovoltaic performance of dye-sensitized solar cell by rare-earth doped oxide of Lu2O3:(Tm3+, Yb3+)

    International Nuclear Information System (INIS)

    Li Qingbei; Lin Jianming; Wu Jihuai; Lan Zhang; Wang Yue; Peng Fuguo; Huang Miaoliang

    2011-01-01

    Highlights: → Tm 3+ /Yb 3+ codoped oxide is introduced into the TiO 2 film in dye-sensitized solar cell. → The RE improves light harvest via conversion luminescence and increases photocurrent. → The RE elevates the oxide film energy level and increases the cell photovoltage. → The cell efficiency is increased by 11.1% compared to the cell lacking of RE doping. - Abstract: In order to increase of the photocurrent, photovoltage and energy conversion efficiency of dye-sensitized solar cell (DSSC), rare-earth doped oxide of Lu 2 O 3 :(Tm 3+ , Yb 3+ ) is prepared and introduced into the TiO 2 film in the DSSC. As a luminescence medium, Lu 2 O 3 :(Tm 3+ , Yb 3+ ) improves incident light harvest via a conversion luminescence process and increases photocurrent; as a p-type dopant, the rare-earth ions elevate the energy level of the oxide film and increase the photovoltage. Under a simulated solar light irradiation of 100 mW cm -2 , the light-to-electric energy conversion efficiency of the DSSC with Lu 2 O 3 :(Tm 3+ , Yb 3+ ) doping reaches 6.63%, which is increased by 11.1% compared to the DSSC without Lu 2 O 3 :(Tm 3+ , Yb 3+ ) doping.

  5. Direct imaging of dopant distribution in polycrystalline ZnO films

    Czech Academy of Sciences Publication Activity Database

    Lorenzo, F.; Aebersold, A.B.; Morales-Masis, M.; Ledinský, Martin; Escrig, S.; Vetushka, Aliaksi; Alexander, D.T.L.; Hessler-Wyser, A.; Fejfar, Antonín; Hébert, C.; Nicolay, S.; Ballif, C.

    2017-01-01

    Roč. 9, č. 8 (2017), s. 7241-7248 ISSN 1944-8244 R&D Projects: GA ČR GC16-10429J Institutional support: RVO:68378271 Keywords : dopant distribution * film polarity * grain boundaries * NanoSIMS * polycrystalline film * zinc oxide Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 7.504, year: 2016

  6. Three-Dimensional Porous Nitrogen-Doped NiO Nanostructures as Highly Sensitive NO2 Sensors

    Directory of Open Access Journals (Sweden)

    Van Hoang Luan

    2017-10-01

    Full Text Available Nickel oxide has been widely used in chemical sensing applications, because it has an excellent p-type semiconducting property with high chemical stability. Here, we present a novel technique of fabricating three-dimensional porous nitrogen-doped nickel oxide nanosheets as a highly sensitive NO2 sensor. The elaborate nanostructure was prepared by a simple and effective hydrothermal synthesis method. Subsequently, nitrogen doping was achieved by thermal treatment with ammonia gas. When the p-type dopant, i.e., nitrogen atoms, was introduced in the three-dimensional nanostructures, the nickel-oxide-nanosheet-based sensor showed considerable NO2 sensing ability with two-fold higher responsivity and sensitivity compared to non-doped nickel-oxide-based sensors.

  7. Influence of dopants on the glow curve structure and energy dependence of LiF:Mg,Cu,Si detectors

    Energy Technology Data Exchange (ETDEWEB)

    Knezevic, Z., E-mail: zknez@irb.h [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia); Ranogajec-Komor, M.; Miljanic, S. [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia); Lee, J.I.; Kim, J.L. [Korea Atomic Energy Research Institute, P.O. Box 105 Yuseong, Daejon 305-600 (Korea, Republic of); Music, S. [Ruder Boskovic Institute, Bijenicka 54, 10000 Zagreb (Croatia)

    2011-03-15

    LiF thermoluminescent material doped with Mg, Cu and Si recently developed by the Korea Atomic Energy Research Institute (KAERI) has shown very good dosimetric properties. Since the thermoluminescence in LiF was found to be dependent on the proper combination of dopants, the investigation of the concentration and type of dopants is very important in developing and characterisation of new TL materials. The aim of this work was to determine the influence of type and concentration of activators on the glow curve structure, sensitivity, reproducibility and on the photon energy response of LiF:Mg,Cu,Si detectors. The energy response was studied in air and on the ISO water phantom in the range of mean photon energies between 33 keV and 164 keV. The morphology and local chemical composition of LiF:Mg,Cu,Si detectors were examined using high resolution scanning electron microscopy (FE-SEM). The results show that type and concentration of activators influence the glow curve and sensitivity. Different dopant concentrations did not show influence on the photon energy response. The sensitivity of LiF:Mg,Cu,Si detector with dopant concentration of Mg = 0.35 mol%, Cu = 0.025 mol% and Si = 0.9 mol% was very high (up to 65 times higher than that of TLD-100). The photon energy response of LiF:Mg,Cu,Si detectors containing all three dopants in various concentrations is in accordance with the IAEA recommendations for individual monitoring.

  8. Influence of dopants on the glow curve structure and energy dependence of LiF:Mg,Cu,Si detectors

    International Nuclear Information System (INIS)

    Knezevic, Z.; Ranogajec-Komor, M.; Miljanic, S.; Lee, J.I.; Kim, J.L.; Music, S.

    2011-01-01

    LiF thermoluminescent material doped with Mg, Cu and Si recently developed by the Korea Atomic Energy Research Institute (KAERI) has shown very good dosimetric properties. Since the thermoluminescence in LiF was found to be dependent on the proper combination of dopants, the investigation of the concentration and type of dopants is very important in developing and characterisation of new TL materials. The aim of this work was to determine the influence of type and concentration of activators on the glow curve structure, sensitivity, reproducibility and on the photon energy response of LiF:Mg,Cu,Si detectors. The energy response was studied in air and on the ISO water phantom in the range of mean photon energies between 33 keV and 164 keV. The morphology and local chemical composition of LiF:Mg,Cu,Si detectors were examined using high resolution scanning electron microscopy (FE-SEM). The results show that type and concentration of activators influence the glow curve and sensitivity. Different dopant concentrations did not show influence on the photon energy response. The sensitivity of LiF:Mg,Cu,Si detector with dopant concentration of Mg = 0.35 mol%, Cu = 0.025 mol% and Si = 0.9 mol% was very high (up to 65 times higher than that of TLD-100). The photon energy response of LiF:Mg,Cu,Si detectors containing all three dopants in various concentrations is in accordance with the IAEA recommendations for individual monitoring.

  9. Exploring routes to tailor the physical and chemical properties of oxides via doping: an STM study

    International Nuclear Information System (INIS)

    Nilius, Niklas

    2015-01-01

    Doping opens fascinating possibilities for tailoring the electronic, optical, magnetic, and chemical properties of oxides. The dopants perturb the intrinsic behavior of the material by generating charge centers for electron transfer into adsorbates, by inducing new energy levels for electronic and optical excitations, and by altering the surface morphology and hence the adsorption and reactivity pattern. Despite a vivid scientific interest, knowledge on doped oxides is limited when compared to semiconductors, which reflects the higher complexity and the insulating nature of many oxides. In fact, atomic-scale studies, aiming at a mechanistic understanding of dopant-related processes, are still scarce.In this article, we review our scanning tunneling microscopy (STM) experiments on thin, crystalline oxide films with a defined doping level. We demonstrate how the impurities alter the surface morphology and produce cationic/anionic vacancies in order to keep the system charge neutral. We discuss how individual dopants can be visualized in the lattice, even if they reside in subsurface layers. By means of STM-conductance and x-ray photoelectron spectroscopy, we determine the electronic impact of dopants, including the energies of their eigen states and local band-bending effects in the host oxide. Electronic transitions between dopant-induced gap states give rise to new optical modes, as detected with STM luminescence spectroscopy. From a chemical perspective, dopants are introduced to improve the redox potential of oxide materials. Electron transfer from Mo-donors, for example, alters the growth behavior of gold and activates O 2 molecules on a wide-gap CaO surface. Such results demonstrate the enormous potential of doped oxides in heterogeneous catalysis. Our experiments address the issue of doping from a fundamental viewpoint, posing questions on the lattice position, charge state, and electron-transfer potential of the impurity ions. Whether doped oxides are

  10. Exploring routes to tailor the physical and chemical properties of oxides via doping: an STM study

    Science.gov (United States)

    Nilius, Niklas

    2015-08-01

    Doping opens fascinating possibilities for tailoring the electronic, optical, magnetic, and chemical properties of oxides. The dopants perturb the intrinsic behavior of the material by generating charge centers for electron transfer into adsorbates, by inducing new energy levels for electronic and optical excitations, and by altering the surface morphology and hence the adsorption and reactivity pattern. Despite a vivid scientific interest, knowledge on doped oxides is limited when compared to semiconductors, which reflects the higher complexity and the insulating nature of many oxides. In fact, atomic-scale studies, aiming at a mechanistic understanding of dopant-related processes, are still scarce. In this article, we review our scanning tunneling microscopy (STM) experiments on thin, crystalline oxide films with a defined doping level. We demonstrate how the impurities alter the surface morphology and produce cationic/anionic vacancies in order to keep the system charge neutral. We discuss how individual dopants can be visualized in the lattice, even if they reside in subsurface layers. By means of STM-conductance and x-ray photoelectron spectroscopy, we determine the electronic impact of dopants, including the energies of their eigen states and local band-bending effects in the host oxide. Electronic transitions between dopant-induced gap states give rise to new optical modes, as detected with STM luminescence spectroscopy. From a chemical perspective, dopants are introduced to improve the redox potential of oxide materials. Electron transfer from Mo-donors, for example, alters the growth behavior of gold and activates O2 molecules on a wide-gap CaO surface. Such results demonstrate the enormous potential of doped oxides in heterogeneous catalysis. Our experiments address the issue of doping from a fundamental viewpoint, posing questions on the lattice position, charge state, and electron-transfer potential of the impurity ions. Whether doped oxides are

  11. The effect of random dopant fluctuation on threshold voltage and drain current variation in junctionless nanotransistors

    International Nuclear Information System (INIS)

    Rezapour, Arash; Rezapour, Pegah

    2015-01-01

    We investigate the effect of dopant random fluctuation on threshold voltage and drain current variation in a two-gate nanoscale transistor. We used a quantum-corrected technology computer aided design simulation to run the simulation (10000 randomizations). With this simulation, we could study the effects of varying the dimensions (length and width), and thicknesses of oxide and dopant factors of a transistor on the threshold voltage and drain current in subthreshold region (off) and overthreshold (on). It was found that in the subthreshold region the variability of the drain current and threshold voltage is relatively fixed while in the overthreshold region the variability of the threshold voltage and drain current decreases remarkably, despite the slight reduction of gate voltage diffusion (compared with that of the subthreshold). These results have been interpreted by using previously reported models for threshold current variability, load displacement, and simple analytical calculations. Scaling analysis shows that the variability of the characteristics of this semiconductor increases as the effects of the short channel increases. Therefore, with a slight increase of length and a reduction of width, oxide thickness, and dopant factor, we could correct the effect of the short channel. (paper)

  12. Damage accumulation and dopant migration during shallow As and Sb implantation into Si

    Energy Technology Data Exchange (ETDEWEB)

    Werner, M.; Berg, J.A. van den E-mail: j.a.vandenberg@salford.ac.uk; Armour, D.G.; Vandervorst, W.; Collart, E.H.J.; Goldberg, R.D.; Bailey, P.; Noakes, T.C.Q

    2004-02-01

    The damage evolution and concomitant dopant redistribution as a function of ion fluence during ultra shallow, heavy ion implants into Si have been investigated using medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). These studies involved As and Sb ions implanted at room temperature, at energies of 2.5 and 2 keV to doses from 3 x 10{sup 13} to 5 x 10{sup 15} cm{sup -2}. MEIS is capable of detecting both the displaced atom and implant profiles with sub-nanometre depth resolution. These studies show that for doses up to 1 x 10{sup 14} cm{sup -2} (at which an amorphous layer is formed) the damage build up does not follow the energy deposition function. Instead it proceeds through the initial formation of a {approx}4 nm wide amorphous layer immediately under the oxide, that grows inwards into the bulk with increasing dose. This behaviour is explained in terms of the migration of some of the interstitials produced along the length of the collision cascade to the oxide or amorphous/crystal Si interface, where their trapping nucleates the growth of a shallow amorphous layer and the subsequent planar growth inwards of the damage layer. Although for doses {>=}4 x 10{sup 14} cm{sup -2} the As depth profiles agreed well with TRIM calculations, for lower doses As was observed to have a shallower profile, {approx}2 nm nearer to the surface. This behaviour is related the growth of the amorphous layer and ascribed to the movement of As into the near-surface amorphous layer (probably mediated by point defect migration) in which the larger dopant is accommodated more easily. SIMS studies have confirmed this dopant segregation effect. Shallow Sb implants also exhibit this novel dopant movement effect for low doses in combination with a damage evolution similar to As.

  13. Damage accumulation and dopant migration during shallow As and Sb implantation into Si

    International Nuclear Information System (INIS)

    Werner, M.; Berg, J.A. van den; Armour, D.G.; Vandervorst, W.; Collart, E.H.J.; Goldberg, R.D.; Bailey, P.; Noakes, T.C.Q.

    2004-01-01

    The damage evolution and concomitant dopant redistribution as a function of ion fluence during ultra shallow, heavy ion implants into Si have been investigated using medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). These studies involved As and Sb ions implanted at room temperature, at energies of 2.5 and 2 keV to doses from 3 x 10 13 to 5 x 10 15 cm -2 . MEIS is capable of detecting both the displaced atom and implant profiles with sub-nanometre depth resolution. These studies show that for doses up to 1 x 10 14 cm -2 (at which an amorphous layer is formed) the damage build up does not follow the energy deposition function. Instead it proceeds through the initial formation of a ∼4 nm wide amorphous layer immediately under the oxide, that grows inwards into the bulk with increasing dose. This behaviour is explained in terms of the migration of some of the interstitials produced along the length of the collision cascade to the oxide or amorphous/crystal Si interface, where their trapping nucleates the growth of a shallow amorphous layer and the subsequent planar growth inwards of the damage layer. Although for doses ≥4 x 10 14 cm -2 the As depth profiles agreed well with TRIM calculations, for lower doses As was observed to have a shallower profile, ∼2 nm nearer to the surface. This behaviour is related the growth of the amorphous layer and ascribed to the movement of As into the near-surface amorphous layer (probably mediated by point defect migration) in which the larger dopant is accommodated more easily. SIMS studies have confirmed this dopant segregation effect. Shallow Sb implants also exhibit this novel dopant movement effect for low doses in combination with a damage evolution similar to As

  14. Dopant atoms as quantum components in silicon nanoscale devices

    Science.gov (United States)

    Zhao, Xiaosong; Han, Weihua; Wang, Hao; Ma, Liuhong; Li, Xiaoming; Zhang, Wang; Yan, Wei; Yang, Fuhua

    2018-06-01

    Recent progress in nanoscale fabrication allows many fundamental studies of the few dopant atoms in various semiconductor nanostructures. Since the size of nanoscale devices has touched the limit of the nature, a single dopant atom may dominate the performance of the device. Besides, the quantum computing considered as a future choice beyond Moore's law also utilizes dopant atoms as functional units. Therefore, the dopant atoms will play a significant role in the future novel nanoscale devices. This review focuses on the study of few dopant atoms as quantum components in silicon nanoscale device. The control of the number of dopant atoms and unique quantum transport characteristics induced by dopant atoms are presented. It can be predicted that the development of nanoelectronics based on dopant atoms will pave the way for new possibilities in quantum electronics. Project supported by National Key R&D Program of China (No. 2016YFA0200503).

  15. Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies

    Science.gov (United States)

    Quevedo Lopez, Manuel Angel

    Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050°C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixO y are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford Backscattering Spectroscopy (RBS), Heavy Ion RBS (HI-RBS), X-ray Photoelectron Spectroscopy (XPS), High Resolution Transmission Electron Microscopy (HR-TEM), and Time of Flight and Dynamic Secondary Ion Mass Spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling of the dopant profiles in the Si substrate. In this disseration is reported that Hf silicate films are more stable than Zr silicate films, from the metal interdiffusion point of view. On the other hand, dopant (B, As, and P) penetration is observed for HfSixO y films. However, the addition of nitrogen to the Hf - Si - O systems improves the dopant penetration properties of the resulting HfSi xOyNz films.

  16. Tris(2-(1 H -pyrazol-1-yl)pyridine)cobalt(III) as p-Type Dopant for Organic Semiconductors and Its Application in Highly Efficient Solid-State Dye-Sensitized Solar Cells

    KAUST Repository

    Burschka, Julian

    2011-11-16

    Chemical doping is an important strategy to alter the charge-transport properties of both molecular and polymeric organic semiconductors that find widespread application in organic electronic devices. We report on the use of a new class of Co(III) complexes as p-type dopants for triarylamine-based hole conductors such as spiro-MeOTAD and their application in solid-state dye-sensitized solar cells (ssDSCs). We show that the proposed compounds fulfill the requirements for this application and that the discussed strategy is promising for tuning the conductivity of spiro-MeOTAD in ssDSCs, without having to rely on the commonly employed photo-doping. By using a recently developed high molar extinction coefficient organic D-π-A sensitizer and p-doped spiro-MeOTAD as hole conductor, we achieved a record power conversion efficiency of 7.2%, measured under standard solar conditions (AM1.5G, 100 mW cm -2). We expect these promising new dopants to find widespread applications in organic electronics in general and photovoltaics in particular. © 2011 American Chemical Society.

  17. Trivalent dopants on ZnO semiconductor obtained by mechanical milling

    Energy Technology Data Exchange (ETDEWEB)

    Damonte, L.C., E-mail: damonte@fisica.unlp.edu.a [Dto. De Fisica, UNLP, IFLP-CONICET, C.C.67 (1900) La Plata (Argentina); Dto. De Fisica Aplicada, Universidad Politecnica de Valencia, Valencia (Spain); Donderis, V. [Dto. De Ingenieria Electrica, Universidad Politecnica de Valencia, Cami de Vera s/n, 46071 Valencia (Spain); Hernandez-Fenollosa, M.A. [Dto. De Fisica Aplicada, Universidad Politecnica de Valencia, Valencia (Spain)

    2009-08-26

    Al-doped ZnO powders were obtained by mechanical milling. This n-type oxide material is of interest for application in electronic devices as solar cells. The incorporation of the metal dopant into the ZnO wurtzite structure has been verified by X-ray diffraction, positron annihilation spectroscopy and optical analysis. The optical reflection measurements were strongly affected by the Al incorporation. The positron annihilation spectroscopy constituted an adequate probe to sense the cation substitution in the doped semiconductor.

  18. Trivalent dopants on ZnO semiconductor obtained by mechanical milling

    International Nuclear Information System (INIS)

    Damonte, L.C.; Donderis, V.; Hernandez-Fenollosa, M.A.

    2009-01-01

    Al-doped ZnO powders were obtained by mechanical milling. This n-type oxide material is of interest for application in electronic devices as solar cells. The incorporation of the metal dopant into the ZnO wurtzite structure has been verified by X-ray diffraction, positron annihilation spectroscopy and optical analysis. The optical reflection measurements were strongly affected by the Al incorporation. The positron annihilation spectroscopy constituted an adequate probe to sense the cation substitution in the doped semiconductor.

  19. Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

    Science.gov (United States)

    Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

    2015-03-01

    Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

  20. Dopant ink composition and method of fabricating a solar cell there from

    Energy Technology Data Exchange (ETDEWEB)

    Loscutoff, Paul; Wu, Kahn; Molesa, Steven Edward

    2017-10-25

    Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

  1. Dopant ink composition and method of fabricating a solar cell there from

    Science.gov (United States)

    Loscutoff, Paul; Wu, Kahn; Molesa, Steven Edward

    2015-03-31

    Dopant ink compositions and methods of fabricating solar cells there from are described. A dopant ink composition may include a cross-linkable matrix precursor, a bound dopant species, and a solvent. A method of fabricating a solar cell may include delivering a dopant ink composition to a region above a substrate. The dopant ink composition includes a cross-linkable matrix precursor, a bound dopant species, and a solvent. The method also includes baking the dopant ink composition to remove a substantial portion of the solvent of the dopant ink composition, curing the baked dopant ink composition to cross-link a substantial portion of the cross-linkable matrix precursor of the dopant ink composition, and driving dopants from the cured dopant ink composition toward the substrate.

  2. Understanding the gas sensing properties of polypyrrole coated tin oxide nanofiber mats

    Science.gov (United States)

    Bagchi, Sudeshna; Ghanshyam, C.

    2017-03-01

    Tin oxide-polypyrrole composites have been widely studied for their enhanced sensing performance towards ammonia vapours, but further investigations are required for an understanding of the interaction mechanisms with different target analytes. In this work, polypyrrole coated tin oxide fibers have been synthesized using a two-step approach of electrospinning and vapour phase polymerization for the sensing of ammonia, ethanol, methanol, 2-propanol and acetone vapours. The resistance variation in the presence of these vapours of different nature and concentration is investigated for the determination of sensor response. A decrease in resistance occurred on interaction of tin oxide-polypyrrole with ammonia, as opposed to previous reported works. Partial reduction of polypyrrole due to interfacial interaction with tin oxide has been proposed to explain this behavior. High sensitivity of 7.45 is achieved for 1 ppm ammonia concentration. Furthermore, the sensor exhibited high sensitivity and a faster response towards ethanol vapours although methanol has the highest electron donating capability. The catalytic mechanism has been discussed to explain this interesting behavior. The results reveal that interaction between tin oxide and polypyrrole is crucial to control the predominant sensing mechanism.

  3. Use of Cu+1 dopant and it's doping effects on polyaniline conducting system in water and tetrahydrofuran

    Science.gov (United States)

    Ali, Vazid; Kaur, Raminder; Kamal, Neel; Singh, Sukhmehar; Jain, S. C.; Kang, H. P. S.; Zulfequar, M.; Husain, M.

    2006-04-01

    The structural modification and properties of polymeric materials are of utmost importance in deciding their applications. In the present study, the synthesis of polyaniline (PANI) has been carried out via chemical oxidation in acidic medium by potassium-dichromate and the yield of synthesized polyaniline was found to be 75 80%. The copper per chlorate tetrabenzonitrile salt (CuClO4·4BN) used for chemical doping in synthesized polyaniline is stable in organic solvent like acetonitrile (AN) and benzonitrile (BN). The effect of Cu+1 oxidation state (dopant) in polyaniline has been characterized by FTIR. Electrical and dielectric measurements show the decrease in the intensity of the Cu+1 salt signal and the appearance of a radical signal due to the formation of oxidative coupled in polymeric species. Electrical and dielectric properties of doped polyaniline samples show significant changes due to the effect of dopant (CuClO4·4BN). It is observed that the conductivity is contributing both by formation of ionic complex and particularly dominated by electronic due to the mobility of charge carriers along the polyaniline chain.

  4. Directed Atom-by-Atom Assembly of Dopants in Silicon.

    Science.gov (United States)

    Hudak, Bethany M; Song, Jiaming; Sims, Hunter; Troparevsky, M Claudia; Humble, Travis S; Pantelides, Sokrates T; Snijders, Paul C; Lupini, Andrew R

    2018-05-17

    The ability to controllably position single atoms inside materials is key for the ultimate fabrication of devices with functionalities governed by atomic-scale properties. Single bismuth dopant atoms in silicon provide an ideal case study in view of proposals for single-dopant quantum bits. However, bismuth is the least soluble pnictogen in silicon, meaning that the dopant atoms tend to migrate out of position during sample growth. Here, we demonstrate epitaxial growth of thin silicon films doped with bismuth. We use atomic-resolution aberration-corrected imaging to view the as-grown dopant distribution and then to controllably position single dopants inside the film. Atomic-scale quantum-mechanical calculations corroborate the experimental findings. These results indicate that the scanning transmission electron microscope is of particular interest for assembling functional materials atom-by-atom because it offers both real-time monitoring and atom manipulation. We envision electron-beam manipulation of atoms inside materials as an achievable route to controllable assembly of structures of individual dopants.

  5. Dopant density from maximum-minimum capacitance ratio of implanted MOS structures

    International Nuclear Information System (INIS)

    Brews, J.R.

    1982-01-01

    For uniformly doped structures, the ratio of the maximum to the minimum high frequency capacitance determines the dopant ion density per unit volume. Here it is shown that for implanted structures this 'max-min' dopant density estimate depends upon the dose and depth of the implant through the first moment of the depleted portion of the implant. A a result, the 'max-min' estimate of dopant ion density reflects neither the surface dopant density nor the average of the dopant density over the depletion layer. In particular, it is not clear how this dopant ion density estimate is related to the flatband capacitance. (author)

  6. Understanding the ionic conductivity maximum in doped ceria: trapping and blocking.

    Science.gov (United States)

    Koettgen, Julius; Grieshammer, Steffen; Hein, Philipp; Grope, Benjamin O H; Nakayama, Masanobu; Martin, Manfred

    2018-02-26

    Materials with high oxygen ion conductivity and low electronic conductivity are required for electrolytes in solid oxide fuel cells (SOFC) and high-temperature electrolysis (SOEC). A potential candidate for the electrolytes, which separate oxidation and reduction processes, is rare-earth doped ceria. The prediction of the ionic conductivity of the electrolytes and a better understanding of the underlying atomistic mechanisms provide an important contribution to the future of sustainable and efficient energy conversion and storage. The central aim of this paper is the detailed investigation of the relationship between defect interactions at the microscopic level and the macroscopic oxygen ion conductivity in the bulk of doped ceria. By combining ab initio density functional theory (DFT) with Kinetic Monte Carlo (KMC) simulations, the oxygen ion conductivity is predicted as a function of the doping concentration. Migration barriers are analyzed for energy contributions, which are caused by the interactions of dopants and vacancies with the migrating oxygen vacancy. We clearly distinguish between energy contributions that are either uniform for forward and backward jumps or favor one migration direction over the reverse direction. If the presence of a dopant changes the migration energy identically for forward and backward jumps, the resulting energy contribution is referred to as blocking. If the change in migration energy due to doping is different for forward and backward jumps of a specific ionic configuration, the resulting energy contributions are referred to as trapping. The influence of both effects on the ionic conductivity is analyzed: blocking determines the dopant fraction where the ionic conductivity exhibits the maximum. Trapping limits the maximum ionic conductivity value. In this way, a deeper understanding of the underlying mechanisms determining the influence of dopants on the ionic conductivity is obtained and the ionic conductivity is predicted

  7. Dopant structural distortions in high-temperature superconductors: an active or a passive role?

    International Nuclear Information System (INIS)

    Haskel, D.; Stern, E.A.; Dogan, F.; Moodenbaugh, A.R.

    2001-01-01

    The parent compounds of high-temperature superconductors, such as YBa 2 Cu 3 O 6 and La 2 CuO 4 , are strongly interacting electron systems, rendering them insulators with Mott-Hubbard gaps of a few electron volts. Charge carriers (holes) are introduced by chemical doping, causing an insulator-metal (IM) transition and, at low temperatures, superconductivity. The role of dopants is widely seen as limited to the introduction of holes into the CuO 2 planes (i.e. occupying electronic states derived from Cu 3d x2-y2 and O 2p x,y atomic orbitals). Most theories of high-T c superconductivity deal with pairing interactions between these planar holes. Local distortions around dopants are poorly understood, because of the experimental difficulty in obtaining such information, particularly at low doping. This has resulted in the neglect, in most theories, of the effect of such distortions on the chemical and electronic structure of high-T c superconductors. Angular-resolved X-ray absorption fine structure (XAFS) spectroscopy on oriented samples is an ideal technique to elucidate the dopant distortions. Element specificity, together with a large orientation dependence of the XAFS signal in these layered structures, allows the local structure around dopants to be resolved. Results are presented here on (Sr, Ba) and Ni dopants, which substitute at the La and Cu sites, respectively, of insulating La 2 CuO 4 . The relevance of the measured local distortions for a complete understanding of the normal and superconducting properties of cuprates is discussed. (au)

  8. Dopant-induced ignition of helium nanoplasmas—a mechanistic study

    Science.gov (United States)

    Heidenreich, Andreas; Schomas, Dominik; Mudrich, Marcel

    2017-12-01

    Helium (He) nanodroplets irradiated by intense near-infrared laser pulses form a nanoplasma by avalanche-like electron impact ionizations (EIIs) even at lower laser intensities where He is not directly field ionized, provided that the droplets contain a few dopant atoms which provide seed electrons for the EII avalanche. In this theoretical paper on calcium and xenon doped He droplets we elucidate the mechanism which induces ionization avalanches, termed ignition. We find that the partial loss of seed electrons from the activated droplets starkly assists ignition, as the Coulomb barrier for ionization of helium is lowered by the electric field of the dopant cations, and this deshielding of the cation charges enhances their electric field. In addition, the dopant ions assist the acceleration of the seed electrons (slingshot effect) by the laser field, supporting EIIs of He and also causing electron loss by catapulting electrons away. The dopants’ ability to lower the Coulomb barriers at He as well as the slingshot effect decrease with the spatial expansion of the dopant, causing a dependence of the dopants’ ignition capability on the dopant mass. Here, we develop criteria (impact count functions) to assess the ignition capability of dopants, based on (i) the spatial overlap of the seed electron cloud with the He atoms and (ii) the overlap of their kinetic energy distribution with the distribution of Coulomb barrier heights at He. The relatively long time delays between the instants of dopant ionization and ignition (incubation times) for calcium doped droplets are determined to a large extent by the time it takes to deshield the dopant ions.

  9. Titanium dioxide nanotube membranes for solar energy conversion: effect of deep and shallow dopants.

    Science.gov (United States)

    Ding, Yuchen; Nagpal, Prashant

    2017-04-12

    Nanostructured titanium dioxide (TiO 2 ) has been intensively investigated as a material of choice for solar energy conversion in photocatalytic, photoelectrochemical, photovoltaic, and other photosensitized devices for converting light into chemical feedstocks or electricity. Towards management of light absorption in TiO 2 , while the nanotubular structure improves light absorption and simultaneous charge transfer to mitigate problems due to the indirect bandgap of the semiconductor, typically dopants are used to improve light absorption of incident solar irradiation in the wide bandgap of TiO 2 . While these dopants can be critical to the success of these solar energy conversion devices, their effect on photophysical and photoelectrochemical properties and detailed photokinetics are relatively under-studied. Here, we show the effect of deep and shallow metal dopants on the kinetics of photogenerated charged carriers in TiO 2 and the resulting effect on photocatalytic and photoelectrochemical processes using these nanotube membranes. We performed a detailed optical, electronic, voltammetry and electrochemical impedance study to understand the effect of shallow and deep metal dopants (using undoped and niobium- and copper-doped TiO 2 nanotubes) on light absorption, charge transport and charge transfer processes. Using wireless photocatalytic methylene blue degradation and carbon dioxide reduction, and wired photoelectrochemical device measurements, we elucidate the effect of different dopants on solar-to-fuel conversion efficiency and simultaneously describe the photokinetics using a model, to help design better energy conversion devices.

  10. Influence of Dopants in ZnO Films on Defects

    Science.gov (United States)

    Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

    2008-12-01

    The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

  11. Oxide film assisted dopant diffusion in silicon carbide

    Energy Technology Data Exchange (ETDEWEB)

    Tin, Chin-Che, E-mail: cctin@physics.auburn.ed [Department of Physics, Auburn University, Alabama 36849 (United States); Mendis, Suwan [Department of Physics, Auburn University, Alabama 36849 (United States); Chew, Kerlit [Department of Electrical and Electronic Engineering, Faculty of Engineering and Science, Universiti Tunku Abdul Rahman, Kuala Lumpur (Malaysia); Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin [Physical Technical Institute, Uzbek Academy of Sciences, 700084 Tashkent (Uzbekistan); Atabaev, Bakhtiyar [Institute of Electronics, Uzbek Academy of Sciences, 700125 Tashkent (Uzbekistan); Adedeji, Victor [Department of Chemistry, Geology and Physics, Elizabeth City State University, North Carolina 27909 (United States); Rusli [School of Electrical and Electronic Engineering, Nanyang Technological University (Singapore)

    2010-10-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  12. Oxide film assisted dopant diffusion in silicon carbide

    International Nuclear Information System (INIS)

    Tin, Chin-Che; Mendis, Suwan; Chew, Kerlit; Atabaev, Ilkham; Saliev, Tojiddin; Bakhranov, Erkin; Atabaev, Bakhtiyar; Adedeji, Victor; Rusli

    2010-01-01

    A process is described to enhance the diffusion rate of impurities in silicon carbide so that doping by thermal diffusion can be done at lower temperatures. This process involves depositing a thin film consisting of an oxide of the impurity followed by annealing in an oxidizing ambient. The process uses the lower formation energy of silicon dioxide relative to that of the impurity-oxide to create vacancies in silicon carbide and to promote dissociation of the impurity-oxide. The impurity atoms then diffuse from the thin film into the near-surface region of silicon carbide.

  13. Potential rare-earth modified CeO{sub 2} catalysts for soot oxidation. Part III. Effect of dopant loading and calcination temperature on catalytic activity with O{sub 2} and NO + O{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Krishna, K.; Bueno-Lopez, A.; Makkee, M.; Moulijn, J.A. [Catalysis Engineering, DelftChemTech, Delft University of Technology, Julianalaan 136, NL 2628 BL Delft (Netherlands)

    2007-09-26

    CeO{sub 2} and CeReO{sub xy} catalysts are prepared by the calcination at different temperatures (y = 500-1000 C) and having a different composition (Re = La{sup 3+} or Pr{sup 3+/4+}{sub ,} 0-90 wt.%). The catalysts are characterised by XRD, H{sub 2}-TPR, Raman, and BET surface area. The soot oxidation is studied with O{sub 2} and NO + O{sub 2} in the tight and loose contact conditions, respectively. CeO{sub 2} sinters between 800-900 C due to a grain growth, leading to an increased crystallite size and a decreased BET surface area. La{sup 3+} or Pr{sup 3+/4+} hinders the grain growth of CeO{sub 2} and, thereby, improving the surface catalytic properties. Using O{sub 2} as an oxidant, an improved soot oxidation is observed over CeLaO{sub xy} and CePrO{sub xy} in the whole dopant weight loading and calcination temperature range studied, compared with CeO{sub 2}. Using NO + O{sub 2}, the soot conversion decreased over CeLaO{sub xy} catalysts calcined below 800 C compared with the soot oxidation over CeO{sub 2y}. CePrO{sub xy}, on the other hand, showed a superior soot oxidation activity in the whole composition and calcination temperature range using NO + O{sub 2}. The improvement in the soot oxidation activity over the various catalysts with O{sub 2} can be explained based on an improvement in the external surface area. The superior soot oxidation activity of CePrO{sub xy} with NO + O{sub 2} is explained by the changes in the redox properties of the catalyst as well as surface area. CePrO{sub xy}, having 50 wt.% of dopant, is found to be the best catalyst due to synergism between cerium and praseodymium compared to pure components. NO into NO{sub 2} oxidation activity, that determines soot oxidation activity, is improved over all CePrO{sub x} catalysts. (author)

  14. Oxidative Stress in Oral Diseases: Understanding Its Relation with Other Systemic Diseases

    Directory of Open Access Journals (Sweden)

    Jaya Kumar

    2017-09-01

    Full Text Available Oxidative stress occurs in diabetes, various cancers, liver diseases, stroke, rheumatoid arthritis, chronic inflammation, and other degenerative diseases related to the nervous system. The free radicals have deleterious effect on various organs of the body. This is due to lipid peroxidation and irreversible protein modification that leads to cellular apoptosis or programmed cell death. During recent years, there is a rise in the oral diseases related to oxidative stress. Oxidative stress in oral disease is related to other systemic diseases in the body such as periodontitis, cardiovascular, pancreatic, gastric, and liver diseases. In the present review, we discuss the various pathways that mediate oxidative cellular damage. Numerous pathways mediate oxidative cellular damage and these include caspase pathway, PERK/NRF2 pathway, NADPH oxidase 4 pathways and JNK/mitogen-activated protein (MAP kinase pathway. We also discuss the role of inflammatory markers, lipid peroxidation, and role of oxygen species linked to oxidative stress. Knowledge of different pathways, role of inflammatory markers, and importance of low-density lipoprotein, fibrinogen, creatinine, nitric oxide, nitrates, and highly sensitive C-reactive proteins may be helpful in understanding the pathogenesis and plan better treatment for oral diseases which involve oxidative stress.

  15. Theoretical study of the local structures and the EPR parameters for RLNKB glasses with VO2+ and Cu2+ dopants

    Science.gov (United States)

    Ding, Chang-Chun; Wu, Shao-Yi; Wu, Li-Na; Zhang, Li-Juan; Peng, Li; Wu, Ming-He; Teng, Bao-Hua

    2018-02-01

    The electron paramagnetic resonance (EPR) parameters and local structures for impurities VO2+ and Cu2+ in RO-Li2O-Na2O-K2O-B2O3 (RLNKB; R = Zn, Mg, Sr and Ba) glasses are theoretically investigated by using the perturbation formulas of the EPR parameters for tetragonally compressed octahedral 3d1 and tetragonally elongated octahedral 3d9 clusters, respectively. The VO2+ and Cu2+ dopants are found to undergo the tetragonal compression (characterized by the negative relative distortion ratios ρ ≈ -3%, -0.98%, -1% and -0.8% for R = Zn, Mg, Sr and Ba) and elongation (characterized by the positive relative distortion ratios ρ ≈ 29%, 17%, 16% and 28%), respectively, due to the Jahn-Teller effect. Both dopants show similar overall decreasing trends of cubic field parameter Dq and covalency factor N with decreasing electronegativity of alkali earth cation R. The conventional optical basicities Λth and local optical basicities Λloc are calculated for both systems, and the local Λloc are higher for Cu2+ than for VO2+ in the same RLNKB glass, despite the opposite relationship for the conventional Λth. This point is supported by the weaker covalency or stronger ionicity for Cu2+ than VO2+ in the same RLNKB system, characterized by the larger N in the former. The above comparative analysis on the spectral and local structural properties would be helpful to understand structures and spectroscopic properties for the similar oxide glasses with transition-metal dopants of complementary electronic configurations.

  16. Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

    Science.gov (United States)

    Lee, Byeong Ryong; Kim, Tae Geun

    2017-01-01

    This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

  17. Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

    Science.gov (United States)

    Lee, Byeong Ryong; Kim, Tae Geun

    2016-06-01

    This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

  18. Reaction of N,N'-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide

    Science.gov (United States)

    Fukui, A.; Miura, K.; Ichimiya, H.; Tsurusaki, A.; Kariya, K.; Yoshimura, T.; Ashida, A.; Fujimura, N.; Kiriya, D.

    2018-05-01

    Tuning the carrier concentration is essential for semiconducting materials to apply optoelectronic devices. Molybdenum disulfide (MoS2) is a semiconducting material composed of atomically thin (˜0.7 nm thickness) layers. To dope thin MoS2, instead of using conventional atom/ion injection processes, a surface charge transfer method was successfully applied. In this study, we report a simple preparation method of a molecular dopant applicable to the doping process. The method follows a previous report for producing a molecular dopant, benzyl viologen (BV) which shows electron doping to MoS2. To prepare dopant BV molecules, a reduction process with a commercially available divalent BV by sodium borohydride (NaBH4) is required; however, the reaction requires a large consumption of NaBH4. NaBH4 drastically reacts with the solvent water itself. We found a reaction process of BV in an organic solvent, N,N'-dimethylformamide (DMF), by adding a small amount of water dissolving the divalent BV. The reaction is mild (at room temperature) and is autonomous once DMF comes into contact with the divalent BV aqueous solution. The reaction can be monitored with a UV-Vis spectrometer, and kinetic analysis indicates two reaction steps between divalent/monovalent/neutral viologen isomers. The product was soluble in toluene and did not dissolve in water, indicating it is similar to the reported dopant BV. The synthesized molecule was found to act as a dopant for MoS2 by applying a metal-oxide-semiconductor field-effect-transistor (MOSFET) structure. The process is a general method and applicable to other viologen-related dopants to tune the electronic structure of 2D materials to facilitate generating atomically thin devices.

  19. Reaction of N,N’-dimethylformamide and divalent viologen molecule to generate an organic dopant for molybdenum disulfide

    Directory of Open Access Journals (Sweden)

    A. Fukui

    2018-05-01

    Full Text Available Tuning the carrier concentration is essential for semiconducting materials to apply optoelectronic devices. Molybdenum disulfide (MoS2 is a semiconducting material composed of atomically thin (∼0.7 nm thickness layers. To dope thin MoS2, instead of using conventional atom/ion injection processes, a surface charge transfer method was successfully applied. In this study, we report a simple preparation method of a molecular dopant applicable to the doping process. The method follows a previous report for producing a molecular dopant, benzyl viologen (BV which shows electron doping to MoS2. To prepare dopant BV molecules, a reduction process with a commercially available divalent BV by sodium borohydride (NaBH4 is required; however, the reaction requires a large consumption of NaBH4. NaBH4 drastically reacts with the solvent water itself. We found a reaction process of BV in an organic solvent, N,N’-dimethylformamide (DMF, by adding a small amount of water dissolving the divalent BV. The reaction is mild (at room temperature and is autonomous once DMF comes into contact with the divalent BV aqueous solution. The reaction can be monitored with a UV-Vis spectrometer, and kinetic analysis indicates two reaction steps between divalent/monovalent/neutral viologen isomers. The product was soluble in toluene and did not dissolve in water, indicating it is similar to the reported dopant BV. The synthesized molecule was found to act as a dopant for MoS2 by applying a metal-oxide-semiconductor field-effect-transistor (MOSFET structure. The process is a general method and applicable to other viologen-related dopants to tune the electronic structure of 2D materials to facilitate generating atomically thin devices.

  20. A magnetic route to measure the average oxidation state of mixed-valent manganese in manganese oxide octahedral molecular sieves (OMS).

    Science.gov (United States)

    Shen, Xiong-Fei; Ding, Yun-Shuang; Liu, Jia; Han, Zhao-Hui; Budnick, Joseph I; Hines, William A; Suib, Steven L

    2005-05-04

    A magnetic route has been applied for measurement of the average oxidation state (AOS) of mixed-valent manganese in manganese oxide octahedral molecular sieves (OMS). The method gives AOS measurement results in good agreement with titration methods. A maximum analysis deviation error of +/-7% is obtained from 10 sample measurements. The magnetic method is able to (1) confirm the presence of mixed-valent manganese and (2) evaluate AOS and the spin states of d electrons of both single oxidation state and mixed-valent state Mn in manganese oxides. In addition, the magnetic method may be extended to (1) determine AOS of Mn in manganese oxide OMS with dopant "diamagnetic" ions, such as reducible V5+ (3d0) ions, which is inappropriate for the titration method due to interference of redox reactions between these dopant ions and titration reagents, such as KMnO4, (2) evaluate the dopant "paramagnetic" ions that are present as clusters or in the OMS framework, and (3) determine AOS of other mixed-valent/single oxidation state ion systems, such as Mo3+(3d3)-Mo4+(3d2) systems and Fe3+ in FeCl3.

  1. Modification of MWCNT@TiO{sub 2} core–shell nanocomposites with transition metal oxide dopants for photoreduction of carbon dioxide into methane

    Energy Technology Data Exchange (ETDEWEB)

    Gui, Meei Mei [Low Carbon Economy (LCE) Group, Chemical Engineering Discipline, School of Engineering, Monash University, Jalan Lagoon Selatan, 46150 Bandar Sunway, Selangor (Malaysia); Chai, Siang-Piao, E-mail: chai.siang.piao@monash.edu [Low Carbon Economy (LCE) Group, Chemical Engineering Discipline, School of Engineering, Monash University, Jalan Lagoon Selatan, 46150 Bandar Sunway, Selangor (Malaysia); Mohamed, Abdul Rahman [Low Carbon Economy (LCE) Group, School of Chemical Engineering, Universiti Sains Malaysia, Engineering Campus, Seri Ampangan, 14300 Nibong Tebal, Pulau Pinang (Malaysia)

    2014-11-15

    Graphical abstract: - Highlights: • Metal oxide-doped MWCNT@TiO{sub 2} core–shell nanocomposites were prepared. • Red-shift of absorption band positions was observed in CuO- and Fe{sub 2}O{sub 3}-MWCNT@TiO{sub 2}. • Total methane formation of 0.93 μmol/g-catalyst was achieved using CuO-MWCNT@TiO{sub 2}. - Abstract: Titanium dioxide (TiO{sub 2}) doped with visible-light-responsive metal oxides has been widely reported for improving the visible light absorption performance of TiO{sub 2} and its photocatalytic activity. The metal oxides could function as ‘charge-carrier traps’ that transport electrons from TiO{sub 2} through the heterojunction of the TiO{sub 2}-metal oxides. In this work, the common transition metal oxides, i.e. FeO{sub x}, CuO{sub x}, NiO, CoO{sub x} and ZnO, were doped onto MWCNT@TiO{sub 2} core–shell nanocomposites. The effects of the metal oxide dopants on the photoactivity of the core–shell nanocomposites on CO{sub 2} reduction were studied. Characterization with diffuse-reflectance UV–vis showed significant improvement on visible light absorption after doping MWCNT@TiO{sub 2} with CuO{sub x}, FeO{sub x} and CoO{sub x} with the adsorption band-edge position red-shifted into the wavelength range of 480–630 nm. CuO-MWCNT@TiO{sub 2} appeared to be the most active one among all the studied photocatalysts, achieving a total methane formation of 0.93 μmol/g-catalyst.

  2. Electrical Transport Ability of Nanostructured Potassium-Doped Titanium Oxide Film

    Science.gov (United States)

    Lee, So-Yoon; Matsuno, Ryosuke; Ishihara, Kazuhiko; Takai, Madoka

    2011-02-01

    Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of 0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was 0.18%.

  3. Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices

    Science.gov (United States)

    Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei

    2011-04-01

    In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation.

  4. Electroluminescence of organic light-emitting diodes with an ultra-thin layer of dopant

    Energy Technology Data Exchange (ETDEWEB)

    Li Weizhi [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu Junsheng [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jsyu@uestc.edu.cn; Wang, Tao [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Jiang, Yadong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)], E-mail: jiangyd@uestc.edu.cn; Wei, Bangxiong [State Key Lab of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2008-03-15

    Conventional fluorescent dyes, i.e., 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB), 5,12-dihydro-5,12-dimethylquino [2,3-b]acridine-7,14-dione (DMQA) and 5,6,11,12-tetraphenylnaphthacene (Rubrene), were used to investigate the performance of organic light-emitting diodes (OLEDs) based on indium tin oxide (ITO)/N,N'-bis-(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB)/tris-(8-hydroxyquinolate)-aluminum (Alq{sub 3})/MgAg. The dyes were either inserted into devices as an ultra-thin film at the NPB/Alq{sub 3} interface by sequential evaporation, or doped into the Alq{sub 3} emission layer by co-evaporation with the doping ratio about 2%. Electroluminescence (EL) spectra of devices indicated that concentration quenching effect (CQE) of the dye-dopant was slightly bigger in the former than in the latter, while the degrees of CQE for three dopants are in the order of DMQA > DCJTB > Rubrene suggested by the difference in EL spectra and performances of devices. In addition, EL process of device with an ultra-thin layer of dopant is dominated by direct carrier trapping (DCT) process due to almost no holes recombine with electrons in Alq{sub 3}-host layer.

  5. Dopant activation in Sn-doped Ga{sub 2}O{sub 3} investigated by X-ray absorption spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Siah, S. C., E-mail: sincheng@alum.mit.edu; Brandt, R. E.; Jaramillo, R.; Buonassisi, T., E-mail: buonassisi@mit.edu [Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Lim, K. [SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Schelhas, L. T.; Toney, M. F. [SLAC National Accelerator Laboratory, Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States); Heinemann, M. D. [PVcomB, Helmholtz-Zentrum Berlin, 12489 Berlin (Germany); Chua, D.; Gordon, R. G. [Department of Chemistry Materials Science and Chemical Biology, Harvard University, Cambridge, Massachusetts 02138 (United States); Wright, J.; Segre, C. U. [Physics Department and CSRRI, Illinois Institute of Technology, Chicago, Illinois 60616 (United States); Perkins, J. D. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

    2015-12-21

    Doping activity in both beta-phase (β-) and amorphous (a-) Sn-doped gallium oxide (Ga{sub 2}O{sub 3}:Sn) is investigated by X-ray absorption spectroscopy (XAS). A single crystal of β-Ga{sub 2}O{sub 3}:Sn grown using edge-defined film-fed growth at 1725 °C is compared with amorphous Ga{sub 2}O{sub 3}:Sn films deposited at low temperature (<300 °C). Our XAS analyses indicate that activated Sn dopant atoms in conductive single crystal β-Ga{sub 2}O{sub 3}:Sn are present as Sn{sup 4+}, preferentially substituting for Ga at the octahedral site, as predicted by theoretical calculations. In contrast, inactive Sn atoms in resistive a-Ga{sub 2}O{sub 3}:Sn are present in either +2 or +4 charge states depending on growth conditions. These observations suggest the importance of growing Ga{sub 2}O{sub 3}:Sn at high temperature to obtain a crystalline phase and controlling the oxidation state of Sn during growth to achieve dopant activation.

  6. Lattice site location of electrical dopant impurities in group-III nitrides

    CERN Document Server

    Amorim, Lígia; Temst, Kristiaan; Wahl, Ulrich

    Dopants are impurities introduced in semiconductors in small quantities to tailor the material characteristics, the effects of which depend on the exact site the dopant occupies in the crystal lattice. The lattice location of impurities is, thus, crucial for the overall understanding of the semiconductor characteristics. In general, several techniques can be used to investigate the lattice site of an impurity, the most accurate and dedicated being emission channeling. However, a characteristic of this technique is that it requires the implantation of radioactive probes, usually created and accelerated in a radioactive ion beam facility. In some cases, emission channeling might however be the only technique capable to investigate the lattice sites occupied by the impurity atoms, provided an appropriate isotope for this technique can be used. For instance, the use of other methods such as Rutherford backscattering spectrometry, perturbed angular correlations, Mössbauer spectroscopy and extended X-ray absorptio...

  7. The use of isoprene as a novel dopant in negative ion atmospheric pressure photoionization mass spectrometry coupled to high-performance liquid chromatography.

    Science.gov (United States)

    Dousty, Faezeh; O'Brien, Rob

    2015-06-15

    As in the case with positive ion atmospheric pressure photoionization (PI-APPI), the addition of dopants significantly improves the sensitivity of negative ion APPI (NI-APPI). However, the research on dopant-assisted-NI-APPI has been quite limited compared to the studies on dopant-assisted PI-APPI. This work presents the potential of isoprene as a novel dopant for NI-APPI. Thirteen compounds, possessing suitable gas-phase ion energetic properties in order to make stable negative ions, were selected. Dopants were continuously introduced into a tee junction prior to the ion source through a fused-silica capillary, while analytes were directly injected into the same tee. Then both were mixed with the continuous solvent from high-performance liquid chromatography (HPLC), nebulized, and entered the source. The nebulized stream was analyzed by APPI tandem quadrupole mass spectrometry in the negative ion mode. The results obtained using isoprene were compared with those obtained by using toluene as a dopant and dopant-free NI-APPI. Isoprene enhanced the ionization intensities of the studied compounds, which were found to be comparable and, in some cases, more effective than toluene. The mechanisms leading to the observed set of negative analyte ions were also discussed. Because in NI-APPI, thermal electrons, which are produced during the photoionization of a dopant, are considered the main reagent ions, both isoprene and toluene promoted the ionization of analytes through the same mechanisms, as expected. Isoprene was shown to perform well as a novel dopant for NI-APPI. Isoprene has a high photoabsorption cross section in the VUV region; therefore, its photoionization leads to a highly effective production of thermal electrons, which further promotes the ionization of analytes. In addition, isoprene is environmentally benign and less toxic compared to currently used dopants. Copyright © 2015 John Wiley & Sons, Ltd.

  8. To study the effect of dopant NiO concentration and duration of calcinations on structural and optical properties of MgO-NiO nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rajesh, E-mail: rkkaushik06@gmail.com [Deptt. of Physics, M.D. University, Rohtak-124001, Haryana (India); Deptt. of Physics,Vaish College of Engineering, Rohtak-124001, Haryana (India); Praveen,; Sharma, Ashwani; Parmar, R.; Dahiya, S. [Deptt. of Physics, M.D. University, Rohtak-124001, Haryana (India); Kishor, N. [Deptt. of Physics, Central University of Haryana (India)

    2016-05-06

    In present work Magnesium oxide (MgO) samples were doped with different concentration of Transition metal Nickel Oxide(NiO) by using Chemical co-precipitation method. The doping levels were varied from NiO (5%, 10%, 15%) and all the samples were calcined at 600°C for 4hrs and 8hrs respectively. Structural analysis of these calcined materials is carried out by X-ray diffraction (XRD) techniques which reveals that average crystalline sizes are in nano region i.e. 21.77nm-31.13 nm and tabulated in table 1. The powder of calcined samples were also characterized by using various other techniques i.e. Scanning Electron Microscopy (SEM), Fourier Transformation Infrared Spectroscopy (FTIR), UV-Visible spectroscopy, Transmission Electron Microscopy (TEM) etc. The effects of dopant concentration, calcined temperature, calcinations duration on samples were studied and also investigate the effect of varying dopant concentration on morphology and optical properties of calcined nanomaterials. From results it was observed that the crystallite size of nanocomposites increases with increases dopant concentration or increases calcinations duration. The optical band gap decreases with increases sintering time and increase with increases dopant concentrations. TEM results coincide with XRD results and show that particles are polycrystalline in nature. FTIR spectra show that for all samples particles are pure in composition and transmission rate increases with calcinations duration.

  9. Direct observation of dopant distribution in GaAs compound semiconductors using phase-shifting electron holography and Lorentz microscopy.

    Science.gov (United States)

    Sasaki, Hirokazu; Otomo, Shinya; Minato, Ryuichiro; Yamamoto, Kazuo; Hirayama, Tsukasa

    2014-06-01

    Phase-shifting electron holography and Lorentz microscopy were used to map dopant distributions in GaAs compound semiconductors with step-like dopant concentration. Transmission electron microscope specimens were prepared using a triple beam focused ion beam (FIB) system, which combines a Ga ion beam, a scanning electron microscope, and an Ar ion beam to remove the FIB damaged layers. The p-n junctions were clearly observed in both under-focused and over-focused Lorentz microscopy images. A phase image was obtained by using a phase-shifting reconstruction method to simultaneously achieve high sensitivity and high spatial resolution. Differences in dopant concentrations between 1 × 10(19) cm(-3) and 1 × 10(18) cm(-3) regions were clearly observed by using phase-shifting electron holography. We also interpreted phase profiles quantitatively by considering inactive layers induced by ion implantation during the FIB process. The thickness of an inactive layer at different dopant concentration area can be measured from the phase image. © The Author 2014. Published by Oxford University Press on behalf of The Japanese Society of Microscopy. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  10. Computational Study of Nb-Doped-SnO2/Pt Interfaces: Dopant Segregation, Electronic Transport, and Catalytic Properties

    DEFF Research Database (Denmark)

    Fu, Qiang; Halck, Niels Bendtsen; Hansen, Heine Anton

    2017-01-01

    functional theory and non equilibrium Green's function study, we investigate the Nb segregation at Pt/NTO interfaces under operational electrochemical conditions, and reveal the resulting effects on the electronic transport, as well as the catalytic properties. We find that the Nb dopants tend to aggregate......Carbon black, a state-of-the-art cathode material for proton exchange membrane fuel cells (PEMFCs), suffers from severe corrosion in practical applications. Niobium-doped tin dioxide (NTO) is a promising alternative to support the Pt catalysts at the cathodes. Here, through a combined density....... The electronic conductivities of the Pt/NTO systems are not particularly sensitive to the distance of the Nb dopants relative to the interface, but depend explicitly on the Nb concentration and configuration. Through a dopant induced ligand effect, the NTO substrates can improve the catalytic activity of the Pt...

  11. Prospects for photosensitive dopants in liquid argon

    International Nuclear Information System (INIS)

    Anderson, D.F.

    1990-12-01

    Evidence is presented that the addition of a few ppM of a photosensitive dopant to a U/liquid argon or Pb/liquid argon calorimeter will make a substantial reduction in the e/π ratio. Previous results indicating high voltage problems and no change in the e/π ratio in tests of photosensitive dopants with the Fermilab D0 experiment's U/liquid argon tests calorimeter are also explained. 13 refs., 3 figs

  12. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    Science.gov (United States)

    Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

    2017-01-01

    Nanostructured nickel oxide-hematite (NiO/α-Fe2O3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni2+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  13. Structural Properties of Zinc Oxide Nanorods Grown on Al-Doped Zinc Oxide Seed Layer and Their Applications in Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Kyung Ho Kim

    2014-03-01

    Full Text Available We fabricated zinc oxide (ZnO nanorods (NRs with Al-doped ZnO (AZO seed layers and dye-sensitized solar cells (DSSCs employed the ZnO NRs between a TiO2 photoelectrode and a fluorine-doped SnO2 (FTO electrode. The growth rate of the NRs was strongly dependent on the seed layer conditions, i.e., thickness, Al dopant and annealing temperature. Attaining a large particle size with a high crystallinity of the seed layer was vital to the well-aligned growth of the NRs. However, the growth was less related to the substrate material (glass and FTO coated glass. With optimized ZnO NRs, the DSSCs exhibited remarkably enhanced photovoltaic performance, because of the increase of dye absorption and fast carrier transfer, which, in turn, led to improved efficiency. The cell with the ZnO NRs grown on an AZO seed layer annealed at 350 °C showed a short-circuit current density (JSC of 12.56 mA/cm2, an open-circuit voltage (VOC of 0.70 V, a fill factor (FF of 0.59 and a power conversion efficiency (PCE, η of 5.20% under air mass 1.5 global (AM 1.5G illumination of 100 mW/cm2.

  14. Synthesis of vertically aligned metal oxide nanostructures

    KAUST Repository

    Roqan, Iman S.; Flemban, Tahani H.

    2016-01-01

    ablation of a target including a metal oxide and, optionally, a dopant. In some embodiments zinc oxide nanostructures are deposited onto a substrate by pulsed laser deposition of a zinc oxide target using an excimer laser emitting UV radiation. The zinc

  15. The Origin of Improved Electrical Double-Layer Capacitance by Inclusion of Topological Defects and Dopants in Graphene for Supercapacitors.

    Science.gov (United States)

    Chen, Jiafeng; Han, Yulei; Kong, Xianghua; Deng, Xinzhou; Park, Hyo Ju; Guo, Yali; Jin, Song; Qi, Zhikai; Lee, Zonghoon; Qiao, Zhenhua; Ruoff, Rodney S; Ji, Hengxing

    2016-10-24

    Low-energy density has long been the major limitation to the application of supercapacitors. Introducing topological defects and dopants in carbon-based electrodes in a supercapacitor improves the performance by maximizing the gravimetric capacitance per mass of the electrode. However, the main mechanisms governing this capacitance improvement are still unclear. We fabricated planar electrodes from CVD-derived single-layer graphene with deliberately introduced topological defects and nitrogen dopants in controlled concentrations and of known configurations, to estimate the influence of these defects on the electrical double-layer (EDL) capacitance. Our experimental study and theoretical calculations show that the increase in EDL capacitance due to either the topological defects or the nitrogen dopants has the same origin, yet these two factors improve the EDL capacitance in different ways. Our work provides a better understanding of the correlation between the atomic-scale structure and the EDL capacitance and presents a new strategy for the development of experimental and theoretical models for understanding the EDL capacitance of carbon electrodes. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Dopant-Free and Carrier-Selective Heterocontacts for Silicon Solar Cells: Recent Advances and Perspectives.

    Science.gov (United States)

    Gao, Pingqi; Yang, Zhenhai; He, Jian; Yu, Jing; Liu, Peipei; Zhu, Juye; Ge, Ziyi; Ye, Jichun

    2018-03-01

    By combining the most successful heterojunctions (HJ) with interdigitated back contacts, crystalline silicon (c-Si) solar cells (SCs) have recently demonstrated a record efficiency of 26.6%. However, such SCs still introduce optical/electrical losses and technological issues due to parasitic absorption/Auger recombination inherent to the doped films and the complex process of integrating discrete p + - and n + -HJ contacts. These issues have motivated the search for alternative new functional materials and simplified deposition technologies, whereby carrier-selective contacts (CSCs) can be formed directly with c-Si substrates, and thereafter form IBC cells, via a dopant-free method. Screening and modifying CSC materials in a wider context is beneficial for building dopant-free HJ contacts with better performance, shedding new light on the relatively mature Si photovoltaic field. In this review, a significant number of achievements in two representative dopant-free hole-selective CSCs, i.e . , poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate)/Si and transition metal oxides/Si, have been systemically presented and surveyed. The focus herein is on the latest advances in hole-selective materials modification, interfacial passivation, contact resistivity, light-trapping structure and device architecture design, etc. By analyzing the structure-property relationships of hole-selective materials and assessing their electrical transport properties, promising functional materials as well as important design concepts for such CSCs toward high-performance SCs have been highlighted.

  17. Transport in Silicon Nanowires: Role of Radial Dopant Profile

    DEFF Research Database (Denmark)

    Markussen, Troels; Rurali, Riccardo; Jauho, Antti-Pekka

    2008-01-01

    distributions of P dopant impurities. We find that the radial distribution of the dopants influences the conductance properties significantly: surface doped wires have longer mean-free paths and smaller sample-to-sample fluctuations in the cross-over from ballistic to diffusive transport. These findings can...

  18. Dopant spin states and magnetism of Sn{sub 1−x}Fe{sub x}O{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Punnoose, A., E-mail: apunnoos@boisestate.edu; Dodge, Kelsey; Reddy, K. M.; Franco, Nevil; Chess, Jordan; Eixenberger, Josh [Department of Physics, Boise State University, Boise, Idaho 83725-1570 (United States); Beltrán, J. J. [Department of Physics, Boise State University, Boise, Idaho 83725-1570 (United States); Grupo de Estado Sólido, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No 52-21, Medellín (Colombia); Barrero, C. A. [Grupo de Estado Sólido, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA, Calle 70 No 52-21, Medellín (Colombia)

    2014-05-07

    This work reports detailed investigations of a series of ∼2.6 nm sized, Sn{sub 1−x}Fe{sub x}O{sub 2} crystallites with x = 0–0.10 using Mossbauer spectroscopy, x-ray photoelectron spectroscopy (XPS), electron paramagnetic resonance spectroscopy (EPR), and magnetometry to determine the oxidation state of Fe dopants and their role in the observed magnetic properties. The magnetic moment per Fe ion μ was the largest ∼6.48 × 10{sup −3} μ{sub B} for the sample with the lowest (0.001%) Fe doping, and it showed a rapid downward trend with increasing Fe doping. Majority of the Fe ions are in 3+ oxidation state occupying octahedral sites. Another significant fraction of Fe dopant ions is in 4+ oxidation state and a still smaller fraction might be existing as Fe{sup 2+} ions, both occupying distorted sites, presumably in the surface regions of the nanocrystals, near oxygen vacancies. These studies also suggest that the observed magnetism is not due to exchange coupling between Fe{sup 3+} spins. A more probable role for the multi-valent Fe ions may be to act as charge reservoirs, leading to charge transfer ferromagnetism.

  19. Sensitization of in vitro mammalian cells by nitrous oxide

    International Nuclear Information System (INIS)

    Ewing, D.

    1984-01-01

    Powers and his colleagues showed almost ten years ago that sensitization by nitrous oxide required two radiolytic products: OH radicals and hydrogen peroxide. That observation with bacterial spores has been confirmed and extended with spores and several strains of bacteria. OH must be present to form hydrogen peroxide, but, in addition, OH must also be present with the hydrogen peroxide for damage to occur. (Reagent hydrogen peroxide, except at very high concentrations, will not sensitize unless OH radicals are present.) The authors have now tested nitrous oxide with two Chinese hamster cell lines, V79 and CHO. The responses in nitrogen and nitrous oxide are the same for each. The authors have tentatively concluded that insufficient hydrogen peroxide is formed in the cells' suspending fluid for damage from nitrous oxide to occur. Several results support this conclusion: reagent hydrogen peroxide is a potent sensitizer of either cell line tested in nitrogen or nitrous oxide and an assay for radiolytic hydrogen peroxide confirms that only minimal levels are formed at the doses used in these survival curves. The authors also present results of other tests to further complement work with procaryotic cells

  20. Anomalous radial and angular strain relaxation around dilute p-, isoelectronic-, and n-type dopants in Si crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Mingshu [School of Physical Sciences, University of Science and Technology of China, Hefei, Anhui Province 230026 (China); Dong, Juncai, E-mail: dongjc@ihep.ac.cn [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China); Chen, Dongliang [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2017-02-01

    Doping is widely applied in yielding desirable properties and functions in silicon technology; thus, fully understanding the relaxation mechanism for lattice-mismatch strain is of fundamental importance. Here we systematically study the local lattice distortion near dilute IIIA-, IVA-, and VA-group substitutional dopants in Si crystal using density functional theory, and anomalous radial and angular strain relaxation modes are first revealed. Both the nearest-neighbor (NN) bond-distances and the tetrahedral bond-angles are found to exhibit completely opposite dependence on the electronic configurations for the low Z (Z<26) and high Z (Z>26) dopants. More surprisingly, negative and positive angular shifts for the second NN twelve Si2 atoms are unveiled surrounding the p- and n-type dopants, respectively. While electron localization function shows that the doped hole and electron are highly localized near the dopants, hence being responsible for the abnormal angular shifts, a universal radial strain relaxation mechanism dominated by a competition of the Coulomb interactions among the ion-core, bond-charge, and the localized hole or electron is also proposed. These findings may prove to be instrumental in precise design of silicon-based solotronics.

  1. Semiconducting oxide gas-sensitive resistors

    International Nuclear Information System (INIS)

    Dusastre, V.J.

    1998-01-01

    The overall aim of this thesis is to describe the gas sensing behaviour of a wide range of metal oxide semiconductors which exhibit tremendous changes in their electrical resistance at high temperatures (typically > 300 deg. C) upon exposure to traces (ppm) of reactive gases present in the air. The effects of surface segregation in antimony-doped tin dioxide (Sn 1-y Sb y O 2 ) on both the electrical response to water vapour and the catalytic combustion of methane in the presence of water vapour were demonstrated. Effects of microstructure, and especially particle size, on the behaviour (sensitivity and selectivity) of these compounds to carbon monoxide and methane were also demonstrated. A change in behaviour correlating with the Debye length was shown. Theoretical calculation methods were used to model surface segregation and surface defects. Antimony segregates as Sb 3+ and the complex (Sn(II).V o ) is a stable surface species. A model for gas response and surface reaction involving this complex is proposed. The properties of solid solution series prepared by systematic cation substitution as a way of understanding the gas response mechanism linked to the surface chemistry has been examined in (CrNbO 4 )x(Sn 1-y Sb y O 2 ) 1-x , Ti x (Sn 1-y Sb y ) 1-x O 2 , and (MWO 4 )x([Sn-Ti]O 2 ) 1x [with M: Mn, Fe, Co, Ni, Cu, Zn]. Effects of stoichiometry, microstructure, combustion gradient and surface segregation on gas (water, carbon monoxide, methane, propane and ammonia) sensitivity and selectivity have been observed and discussed. (author)

  2. On the roles of the dopants in LiF: Mg,Cu,Na,Si thermoluminescent material

    International Nuclear Information System (INIS)

    Lee, J. I.; Kim, J. L.; Chang, S. Y.; Chung, K. S.; Choe, H. S.

    2005-01-01

    In this paper, some results of the study on the roles of the dopants in the LiF:Mg,Cu,Na,Si thermoluminescent (TL) material that was developed at the Korea Atomic Energy Research Inst. for radiation protection are presented. Although there have been many studies to investigate the roles of the dopants in LiF:Mg,Cu,P TL material in the TL process, there are some discrepancies in the understanding of the roles of Cu and P between various researchers. In case of LiF:Mg,Cu,Na,Si TL material, there are a few studies on the roles of the dopants. Three kinds of samples in each of which one dopant is excluded, and the optimised sample, were prepared for this study. The measurements and analysis of the three-dimensional TL spectra, based on the temperature, wavelength and intensity, and the glow curves for those samples are used in this study. The results show that Mg plays a role in the trapping of the charge carriers and Cu plays a role in the luminescence recombination process; however, the effect of Na and Si on the glow curve structure and the TL emission spectra is much less than that of Mg and Cu. It is considered that Na and Si each plays a role in the improvement of the luminescence efficiency. (authors)

  3. Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

    KAUST Repository

    Yang, Xinbo

    2017-05-31

    Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

  4. Sensitivity comparison of two L-alanine doped blends to different photon energies

    International Nuclear Information System (INIS)

    Chen, Felipe; Vega Ramirez, Jose; Nicolucci, Patricia; Baffa, Oswaldo

    2008-01-01

    Full text: Blends of L-alanine (85% weight proportion) with KI (10%) and with PbI 2 (10%), these last two compounds acting as dopants, and with PVA (5%) acting as binder, were prepared in water at 80 C degrees. A blend of pure L-alanine (95%) with PVA (5%) was also prepared. The three blends were irradiated with photon beams of different energies (120 kV, 60 Co and 10 MV) with a unique dose of 30 Gy to compare their sensitivities for those three energies. EPR spectra of the three irradiated blends were recorded in a K-Band spectrometer (24 GHz) taking aliquots of about 4 mg for each blend. The energy sensitivity of a blend was defined as the peak-to-peak amplitude of its EPR spectrum central line. For the 60 Co energy (1.25 MeV) the blends presented practically the same sensitivity indicating that the presence of the dopants does not affect the sensitivity of L-alanine. For 10 MV X-rays there was an increment (around 20% - 30 %) in sensitivity for the two L-alanine doped blends compared with the pure L-alanine blend (not doped). In the case of 120 kV X-rays, the blends ala+KI and ala+PbI 2 showed an increment of 10 and 20 times, respectively, more sensitivity than the pure L-alanine blend. It is concluded that the dopants KI and PbI 2 produce a great enhance of the L-alanine sensitivity to low-energy photons. For the same dopant's content (10%) in the blend, PbI 2 showed a better performance. These results encourage us to try to enhance the sensitivity of L-alanine even more increasing the dopant's content in the blend. Application of these L-alanine doped blends in the dosimetry in diagnostic radiology could be possible. (author)

  5. The effect of different dopant concentration of tailor-made silica fibers in radiotherapy dosimetry

    Science.gov (United States)

    Begum, Mahfuza; Mizanur Rahman, A. K. M.; Zubair, H. T.; Abdul-Rashid, H. A.; Yusoff, Z.; Begum, Mahbuba; Alkhorayef, M.; Alzimami, K.; Bradley, D. A.

    2017-12-01

    In thermoluminescence (TL) material dopant concentration has an important effect on their characteristics as a ;radiation-sensor;. The study investigates dosimetric properties of four different concentration (4 mol%, 5 mol%, 7 mol% and 25 mol%) tailor-made Ge-doped silica fibers. The intention is to seek development of alternative TL materials that offer exceptional advantages over existing passive systems of dosimetry, including improved spatial resolution, a water impervious nature and low cost. Photon beams (6 MV and 10 MV) from a clinical linear accelerator were used for irradiation of the fiber samples over radiation therapy doses, ranging from 0.5 Gy to 8 Gy. SEM-EDX analysis was also performed to investigate the homogeneity of distribution of Ge dopant concentration from the fiber samples. The results of measurement were also compared with two of the more commonly used standard TLDs, TLD-100 (LiF: Mg,Ti-7.5% 6LiF) and TLD-700 ((7LiF: Mg,Ti-99.9%7LiF) chips respectively. The TL intensity of the fiber samples was found to strongly depend on Ge dopant concentration, with samples showing enhanced TL yields with decreasing Ge dopant concentration. 4 mol% Ge-doped silica fiber provided the greatest response whereas the 25 mol% samples showed the least, indicative of the well-known concentration quenching effects All fiber TLDs provided linear dose response over the delivered radiotherapy dose-range, the fibers also showing a weak dependence on photon beam energies in comparing the TL yields at 6 and 10 MV. The fading behavior of the different concentration Ge doped TLD-materials were also measured over a period of thirty (30) days subsequent to irradiation. The relative sensitivity of the samples with respect to standard TLD-100 were found to be 0.37, 0.26, 0.13 and 0.02 in respect of the 4, 5, 7 and 25 mol% fibers. The primary dosimetry peak, which was by far the most prominent of any other feature covered by the glow curve, was found to be around 244 °C using

  6. Two-dimensional dopant profiling of gallium nitride p-n junctions by scanning capacitance microscopy

    Science.gov (United States)

    Lamhamdi, M.; Cayrel, F.; Frayssinet, E.; Bazin, A. E.; Yvon, A.; Collard, E.; Cordier, Y.; Alquier, D.

    2016-04-01

    Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p-n and unipolar junctions. For both p-n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p-n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

  7. Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lamhamdi, M. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France); Ecole national des sciences appliquées khouribga, Université Hassan 1er, 26000 Settat (Morocco); Cayrel, F. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France); Frayssinet, E. [CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne (France); Bazin, A.E.; Yvon, A.; Collard, E. [STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours (France); Cordier, Y. [CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne (France); Alquier, D. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France)

    2016-04-01

    Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p–n and unipolar junctions. For both p–n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p–n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

  8. Phosphorus doped and defects engineered graphene for improved electrochemical sensing: synergistic effect of dopants and defects

    International Nuclear Information System (INIS)

    Chu, Ke; Wang, Fan; Tian, Ye; Wei, Zhen

    2017-01-01

    Heteroatom-doped graphene materials emerged as promising metal-free catalysts have recently attracted a growing interest in electrochemical sensing applications. However, their catalytic activity and sensing performances still need to be further improved. Herein, we reported the development of unique phosphorus (P)-doped and plasma-etched graphene (denoted as PG-E) as an efficient metal-free electrocatalyst for dopamine (DA) sensing. It was demonstrated that introducing both P-dopants and plasma-engineered defects in graphene could synergistically improve the activity toward electrocatalytic oxidation of DA by increasing the accessible active sites and promoting the electron transport capability. The resulting PG-E modified electrode showed exceptional DA sensing performances with low detection limit, high selectivity and good stability. These results suggested that the synergistic effect of dopants and defects might be an important factor for developing the advanced graphene-based metal-free catalysts for electrochemical sensing.

  9. Depleted Nanocrystal-Oxide Heterojunctions for High-Sensitivity Infrared Detection

    Science.gov (United States)

    2015-08-28

    Approved for Public Release; Distribution Unlimited Final Report: 4.3 Electronic Sensing - Depleted Nanocrystal- Oxide Heterojunctions for High...reviewed journals: Final Report: 4.3 Electronic Sensing - Depleted Nanocrystal- Oxide Heterojunctions for High-Sensitivity Infrared Detection Report Title...PERCENT_SUPPORTEDNAME FTE Equivalent: Total Number: 1 1 Final Progress Report Project title: Depleted Nanocrystal- Oxide Heterojunctions for High

  10. Zinc oxide based dye sensitized solar cell using eosin – Y as ...

    African Journals Online (AJOL)

    A zinc oxide based Dye sensitized Solar Cell (DSSC) has been fabricated, using Eosin-Y as the dye adsorbed on a nanocrystalline zinc oxide - fluorine doped tin oxide electrode, for the sensitization of the large band gap semiconductor. The absorption spectrum of Eosin-Y showed high absorption of visible light between ...

  11. Amino Acid Functionalization of Doped Single-Walled Carbon Nanotubes: Effects of Dopants and Side Chains as Well as Zwitterionic Stabilizations.

    Science.gov (United States)

    Jiang, Lisha; Zhu, Chang; Fu, Yujie; Yang, Gang

    2017-04-06

    Functionalization of single-walled carbon nanotubes (SWCNTs) is necessitated in a number of conditions such as drug delivery, and here amino acid functionalization of SWCNTs is conducted within the framework of density functional theory. Functionalization efficiencies of Gly are largely determined by dopants, as a combined effect of atomic radius, electronic configuration, and distortion to SWCNTs. Different functionalization sites in Gly have divergent interaction strengths with M/SWCNTs that decline as O b > N > O a , and this trend seems almost independent of the identity of metallic dopants. B/SWCNT behaves distinctly and prefers to the N site. Dopants affect principally interaction strengths, while amino acids regulate significantly both functionalization configurations and interaction energies. Then focus is given to stabilization of zwitterionic amino acids due to enhanced interactions with the widely used zwitterionic drugs. All metallic dopants render zwitterionic Gly to be the most stable, and side chains in amino acids rather than dopants in M/SWCNTs cause more pronounced effects to zwitterionic stabilizations. Charge transfers between amino acids and M/SWCNTs are closely associated with zwitterionic stabilization effects, and different charge transfer mechanisms between M/SWCNTs and metal ions are interpreted. Thus, this work provides a comprehensive understanding of amino acid functionalization of M/SWCNTs.

  12. Plasmonically sensitized metal-oxide electron extraction layers for organic solar cells.

    Science.gov (United States)

    Trost, S; Becker, T; Zilberberg, K; Behrendt, A; Polywka, A; Heiderhoff, R; Görrn, P; Riedl, T

    2015-01-16

    ZnO and TiOx are commonly used as electron extraction layers (EELs) in organic solar cells (OSCs). A general phenomenon of OSCs incorporating these metal-oxides is the requirement to illuminate the devices with UV light in order to improve device characteristics. This may cause severe problems if UV to VIS down-conversion is applied or if the UV spectral range (λ work, silver nanoparticles (AgNP) are used to plasmonically sensitize metal-oxide based EELs in the vicinity (1-20 nm) of the metal-oxide/organic interface. We evidence that plasmonically sensitized metal-oxide layers facilitate electron extraction and afford well-behaved highly efficient OSCs, even without the typical requirement of UV exposure. It is shown that in the plasmonically sensitized metal-oxides the illumination with visible light lowers the WF due to desorption of previously ionosorbed oxygen, in analogy to the process found in neat metal oxides upon UV exposure, only. As underlying mechanism the transfer of hot holes from the metal to the oxide upon illumination with hν < Eg is verified. The general applicability of this concept to most common metal-oxides (e.g. TiOx and ZnO) in combination with different photoactive organic materials is demonstrated.

  13. Determination of gold and cobalt dopants in advanced materials based on tin oxide by slurry sampling high-resolution continuum source graphite furnace atomic absorption spectrometry

    Science.gov (United States)

    Filatova, Daria G.; Eskina, Vasilina V.; Baranovskaya, Vasilisa B.; Vladimirova, Svetlana A.; Gaskov, Alexander M.; Rumyantseva, Marina N.; Karpov, Yuri A.

    2018-02-01

    A novel approach is developed for the determination of Co and Au dopants in advanced materials based on tin oxide using high-resolution continuum source graphite furnace atomic absorption spectrometry (HR CS GFAAS) with direct slurry sampling. Sodium carboxylmethylcellulose (Na-CMC) is an effective stabilizer for diluted suspensions. Use Na-CMC allows to transfer the analytes into graphite furnace completely and reproducibly. The relative standard deviation obtained by HR CS GFAAS was not higher than 4%. Accuracy was proven by means inductively coupled plasma mass spectrometry (ICP-MS) in solutions after decomposition as a comparative technique. To determine Au and Co in the volume of SnO2, the acid decomposition conditions (HCl, HF) of the samples were suggested by means of an autoclave in a microwave oven.

  14. Enhanced dopamine detection sensitivity by PEDOT/graphene oxide coating on in vivo carbon fiber electrodes.

    Science.gov (United States)

    Taylor, I Mitch; Robbins, Elaine M; Catt, Kasey A; Cody, Patrick A; Happe, Cassandra L; Cui, Xinyan Tracy

    2017-03-15

    Dopamine (DA) is a monoamine neurotransmitter responsible for regulating a variety of vital life functions. In vivo detection of DA poses a challenge due to the low concentration and high speed of physiological signaling. Fast scan cyclic voltammetry at carbon fiber microelectrodes (CFEs) is an effective method to monitor real-time in vivo DA signaling, however the sensitivity is somewhat limited. Electrodeposition of poly(3,4-ethylene dioxythiophene) (PEDOT)/graphene oxide (GO) onto the CFE surface is shown to increase the sensitivity and lower the limit of detection for DA compared to bare CFEs. Thicker PEDOT/GO coatings demonstrate higher sensitivities for DA, but display the negative drawback of slow adsorption and electron transfer kinetics. The moderate thickness resulting from 25 s electrodeposition of PEDOT/GO produces the optimal electrode, exhibiting an 880% increase in sensitivity, a 50% decrease in limit of detection and minimally altered electrode kinetics. PEDOT/GO coated electrodes rapidly and robustly detect DA, both in solution and in the rat dorsal striatum. This increase in DA sensitivity is likely due to increasing the electrode surface area with a PEDOT/GO coating and improved adsorption of DA's oxidation product (DA-o-quinone). Increasing DA sensitivity without compromising electrode kinetics is expected to significantly improve our understanding of the DA function in vivo. Copyright © 2016 Elsevier B.V. All rights reserved.

  15. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    Energy Technology Data Exchange (ETDEWEB)

    Phuan, Yi Wen, E-mail: phuan.yi.wen@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Ibrahim, Elyas, E-mail: meibr2@student.monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Chong, Meng Nan, E-mail: Chong.Meng.Nan@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Sustainable Water Alliance, Advanced Engineering Platform, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Zhu, Tao, E-mail: zhu.tao@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia); Lee, Byeong-Kyu, E-mail: bklee@ulsan.ac.kr [Department of Civil and Environmental Engineering, University of Ulsan, Nam-gu, Daehakro 93, Ulsan 680-749 (Korea, Republic of); Ocon, Joey D., E-mail: jdocon@up.edu.ph [Laboratory of Electrochemical Engineering (LEE), Department of Chemical Engineering, University of the Philippines Diliman, Quezon City 1101 (Philippines); Chan, Eng Seng, E-mail: chan.eng.seng@monash.edu [School of Engineering, Chemical Engineering Discipline, Monash University Malaysia, Jalan Lagoon Selatan, Bandar Sunway, Selangor DE 47500 (Malaysia)

    2017-01-15

    Highlights: • NiO-hematite p-n junction photoanodes were fabricated via an in situ Ni-doping. • The fundamental mechanism of Ni{sup 2+} ions involved was elucidated. • The optimum Ni dopant was 25 M% for the highest photocurrent density. • It exhibited an excellent photoelectrochemical performance of 7-folds enhancement. - Abstract: Nanostructured nickel oxide-hematite (NiO/α-Fe{sub 2}O{sub 3}) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni{sup 2+} ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  16. In situ Ni-doping during cathodic electrodeposition of hematite for excellent photoelectrochemical performance of nanostructured nickel oxide-hematite p-n junction photoanode

    International Nuclear Information System (INIS)

    Phuan, Yi Wen; Ibrahim, Elyas; Chong, Meng Nan; Zhu, Tao; Lee, Byeong-Kyu; Ocon, Joey D.; Chan, Eng Seng

    2017-01-01

    Highlights: • NiO-hematite p-n junction photoanodes were fabricated via an in situ Ni-doping. • The fundamental mechanism of Ni"2"+ ions involved was elucidated. • The optimum Ni dopant was 25 M% for the highest photocurrent density. • It exhibited an excellent photoelectrochemical performance of 7-folds enhancement. - Abstract: Nanostructured nickel oxide-hematite (NiO/α-Fe_2O_3) p-n junction photoanodes synthesized from in situ doping of nickel (Ni) during cathodic electrodeposition of hematite were successfully demonstrated. A postulation model was proposed to explain the fundamental mechanism of Ni"2"+ ions involved, and the eventual formation of NiO on the subsurface region of hematite that enhanced the potential photoelectrochemical water oxidation process. Through this study, it was found that the measured photocurrent densities of the Ni-doped hematite photoanodes were highly dependent on the concentrations of Ni dopant used. The optimum Ni dopant at 25 M% demonstrated an excellent photoelectrochemical performance of 7-folds enhancement as compared to bare hematite photoanode. This was attributed to the increased electron donor density through the p-n junction and thus lowering the energetic barrier for water oxidation activity at the optimum Ni dopant concentration. Concurrently, the in situ Ni-doping of hematite has also lowered the photogenerated charge carrier transfer resistance as measured using the electrochemical impedance spectroscopy. It is expected that the fundamental understanding gained through this study is helpful for the rational design and construction of highly efficient photoanodes for application in photoelectrochemical process.

  17. Photoelectrochemical characterization of squaraine-sensitized nickel oxide cathodes deposited via screen-printing for p-type dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Naponiello, Gaia; Venditti, Iole [Department of Chemistry, Sapienza University of Rome P.le A. Moro 5, 00185 Rome (Italy); Zardetto, Valerio [Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, University of Rome - Tor Vergata, via del Politecnico 1, 00133 Rome (Italy); Saccone, Davide [Department of Chemistry and NIS, Interdepartmental Centre of Excellence, University of Torino, via Pietro Giuria 7, I-10125 Torino (Italy); Di Carlo, Aldo [Centre for Hybrid and Organic Solar Energy, Department of Electronic Engineering, University of Rome - Tor Vergata, via del Politecnico 1, 00133 Rome (Italy); Fratoddi, Ilaria [Department of Chemistry, Sapienza University of Rome P.le A. Moro 5, 00185 Rome (Italy); Center for Nanotechnology for Engineering (CNIS), Sapienza University of Rome P.le A. Moro 5, 00185 Rome (Italy); Barolo, Claudia [Department of Chemistry and NIS, Interdepartmental Centre of Excellence, University of Torino, via Pietro Giuria 7, I-10125 Torino (Italy); Dini, Danilo, E-mail: danilo.dini@uniroma1.it [Department of Chemistry, Sapienza University of Rome P.le A. Moro 5, 00185 Rome (Italy)

    2015-11-30

    Graphical abstract: Screen-printing method has been adopted for the deposition of nickel oxide thin film electrodes with mesoporous features. Nickel oxide was sensitized with three newly synthesized squaraines (VG1C8,VG10C8 and DS2/35) and employed as photoelectroactive cathode of p-type dye-sensitized solar cells. Colorant erythrosine b (EB) was taken as commercial benchmark for comparative purposes. Sensitization was successful with the attainment of overall conversion efficiencies in the order of 0.025% when the mesoporous surface of nickel oxide was alkali treated. The prolongation of nickel oxide sensitization time up to 16 h led to a general increase of the open circuit voltage in the corresponding solar cells. - Highlights: • We deposited nickel oxide with screen-printing technique utilizing nickel oxide nanoparticles. • We employed screen-printed nickel oxide as cathodes of p-DSCs. • We employed new squaraine as sensitizers of screen-printed nickel oxide. • Further progress is expected when the formulation of the screen-printing paste will be optimized. - Abstract: In the present paper we report on the employment of the screen-printing method for the deposition of nickel oxide (NiO{sub x}) layers when preformed nanoparticles of the metal oxide (diameter < 50 nm) constitute the precursors in the paste. The applicative purpose of this study is the deposition of mesoporous NiO{sub x} electrodes in the configuration of thin films (thickness, l ≤ 4 μm) for the realization of p-type dye-sensitized solar cells (p-DSCs). Three different squaraine-based dyes (here indicated with VG1C8, VG10C8 and DS2/35), have been used for the first time as sensitizers of a p-type DSC electrode. VG1C8 and VG10C8 present two carboxylic groups as anchoring moieties, whereas DS2/35 sensitizer possesses four acidic anchoring groups. All three squaraines are symmetrical and differ mainly for the extent of electronic conjugation. The colorant erythrosine b (ERY B) was taken as

  18. Effect of different carbon fillers and dopant acids on electrical ...

    Indian Academy of Sciences (India)

    The nature of both the carbon filler and the dopant acid can significantly influence the conductivity of these nanocomposites. This paper describes the effects of carbon fillers like carbon black (CB), graphite (GR) and muti-walled carbon nanotubes (MWCNT) and of dopant acids like methane sulfonic acid (MSA), camphor ...

  19. Valence and atomic size dependent exchange barriers in vacancy-mediated dopant diffusion

    International Nuclear Information System (INIS)

    Nelson, J.S.; Schultz, P.A.; Wright, A.F.

    1998-01-01

    First-principles pseudopotential calculations of dopant-vacancy exchange barriers indicate a strong dependency on dopant valence and atomic size, in contrast to current models of vacancy-mediated dopant diffusion. First-row elements (B, C, N) are found to have exchange barriers which are an order of magnitude larger than the assumed value of 0.3 eV (the Si vacancy migration energy). copyright 1998 American Institute of Physics

  20. Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

    International Nuclear Information System (INIS)

    Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

    1987-01-01

    Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

  1. On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

    International Nuclear Information System (INIS)

    Wu Hao; Xu Miao; Wan Guangxing; Zhu Huilong; Zhao Lichuan; Tong Xiaodong; Zhao Chao; Chen Dapeng; Ye Tianchun

    2014-01-01

    The importance of substrate doping engineering for extremely thin SOI MOSFETs with ultra-thin buried oxide (ES-UB-MOSFETs) is demonstrated by simulation. A new substrate/backgate doping engineering, lateral non-uniform dopant distributions (LNDD) is investigated in ES-UB-MOSFETs. The effects of LNDD on device performance, V t -roll-off, channel mobility and random dopant fluctuation (RDF) are studied and optimized. Fixing the long channel threshold voltage (V t ) at 0.3 V, ES-UB-MOSFETs with lateral uniform doping in the substrate and forward back bias can scale only to 35 nm, meanwhile LNDD enables ES-UB-MOSFETs to scale to a 20 nm gate length, which is 43% smaller. The LNDD degradation is 10% of the carrier mobility both for nMOS and pMOS, but it is canceled out by a good short channel effect controlled by the LNDD. Fixing V t at 0.3 V, in long channel devices, due to more channel doping concentration for the LNDD technique, the RDF in LNDD controlled ES-UB-MOSFETs is worse than in back-bias controlled ES-UB-MOSFETs, but in the short channel, the RDF for LNDD controlled ES-UB-MOSFET is better due to its self-adaption of substrate doping engineering by using a fixed thickness inner-spacer. A novel process flow to form LNDD is proposed and simulated. (semiconductor devices)

  2. Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon

    International Nuclear Information System (INIS)

    Camillo-Castillo, R.A.; Law, M.E.; Jones, K.S.

    2004-01-01

    As the industry continues to aggressively scale CMOS technology, the shift to lower energy ion implantation becomes essential. The consequent shallower amorphous layers result in dopant profiles that are in closer proximity to the end of range (EOR) damage and therefore a better understanding of the interaction between the dopant atoms and the EOR is required. A study is conducted on the influence of dopant profiles on the behavior of the EOR defects. Czochralski-grown silicon wafers are preamorphized with 1 x 10 15 cm -2 , 10 keV Ge + ions and subsequently implanted with 1 x 10 15 cm -2 , 1 keV B + ions. A sequence of rapid thermal and furnace anneals are performed at 750 deg. C under a nitrogen ambient for periods of 1 s up to 6 h. Plan view transmission electron microscopy (PTEM) reveals a significant difference in the defect evolution for samples with and without boron, suggesting that the boron influences the evolution of the EOR defects. The extended defects observed for samples which contain boron appear as dot-like defects which are unstable and dissolve after very short anneal times. The defect evolution however, in samples without boron follows an Oswald ripening behavior and form {3 1 1}-type defects and dislocation loops. Hall effect measurements denote a high initial activation and subsequent deactivation of the dopant atoms which is characteristic of the formation of boron interstitial clusters. Diffusion analyses via secondary ion mass spectroscopy (SIMS) support this theory

  3. On exceeding the solubility limit of Cr+3 dopants in SnO2 nanoparticles based dilute magnetic semiconductors

    Science.gov (United States)

    URS, Kusuma; Bhat, S. V.; Kamble, Vinayak

    2018-04-01

    The paper investigates the magnetic behavior of chromium doped SnO2 Dilute Magnetic Semiconductor (DMS) nanoparticles, through structural, spectroscopic, and magnetic studies. A non-equilibrium solution combustion method is adopted to synthesize 0-5 at. % Cr doped SnO2 nanoparticles. The detailed spectroscopic studies on the system using micro-Raman spectroscopy, x-ray photoelectron spectroscopy, and electron paramagnetic resonance spectroscopy along with the structural analysis confirm the presence of Cr in 3+ oxidation state, which substitutes at Sn4+ site in SnO6 octahedra of the rutile structure. This doping is found to enhance the defects in the system, i.e., oxygen vacancies. All the synthesized SnO2 nanoparticles (with or without dopants) are found to exhibit Room Temperature Ferromagnetism (RTFM). This occurrence of RTFM is attributed to the magnetic exchange interaction through F-centers of oxygen vacancies as well as dopant magnetic impurities and explained through the Bound Magnetic Polaron (BMP) model of DMS systems. Nonetheless, as the doping of Cr is further increased beyond 2%, the solubility limit is achieved. This antiferromagnetic exchange interaction from interstitial Cr dopants dominates over the BMP mechanism and, hence, leads to the decrease in the net magnetic moment drastically.

  4. Effect of phosphorus dopant concentration on the carrier mobility in ...

    African Journals Online (AJOL)

    This study investigated the effect of phosphorus dopant concentration on mobility of crystalline silicon (c-Si). It considers different temperature ranges, from 100 K to 500 K, and dopant concentration from 1012 cm-3 to 1020 cm-3 in relation to its effect on the mobility of the crystalline silicon. This study indicates that the ...

  5. Improvement of efficiency roll-off in blue phosphorescence OLED using double dopants emissive layer

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Seung Il; Yoon, Ju An; Kim, Nam Ho; Kim, Jin Wook; Kang, Jin Sung; Moon, Chang-Bum [Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan (Korea, Republic of); Kim, Woo Young, E-mail: wykim@hoseo.edu [Department of Green Energy & Semiconductor Engineering, Hoseo University, Asan (Korea, Republic of); Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

    2015-04-15

    Blue phosphorescent organic light-emitting diodes (PHOLEDs) were fabricated using double dopants FIrpic and FIr6 in emissive layer (EML) with structure of ITO/NPB (700 Å)/mCP:FIrpic-8%:FIr6-x% (300 Å)/TPBi (300 Å)/Liq (20 Å)/Al (1200 Å). We optimized concentration of the second dopant FIr6 in the presence of a fixed FIrpic to observe its effect on electrical performance of PHOLED device. 24.8 cd/A of luminous efficiency was achieved by the device with dopant ratio of 8%FIrpic:4%FIr6 in EML. Efficiency roll-off was also improved 20% compared to the PHOLED device singly dopped with FIrpic or FIr6 only. Second doping proved its effect in stabilizing charge balance in EML and enhancing energy transfer of triplet excitons between two dopants. - Highlights: • We fabricated blue PHOLED with double blue phosphorescent dopants in single EML. • Efficiency roll-off was improved by using double dopant in single EML. • The host–dopant transfer is discussed by analyzing the photo-absorption and photoluminescence. • The spectroscopic analysis using multi-peak fits with a Gaussian function.

  6. Ultrafast electron and energy transfer in dye-sensitized iron oxide and oxyhydroxide nanoparticles

    DEFF Research Database (Denmark)

    Gilbert, Benjamin; Katz, Jordan E.; Huse, Nils

    2013-01-01

    photo-initiated interfacial electron transfer. This approach enables time-resolved study of the fate and mobility of electrons within the solid phase. However, complete analysis of the ultrafast processes following dye photoexcitation of the sensitized iron(iii) oxide nanoparticles has not been reported....... We addressed this topic by performing femtosecond transient absorption (TA) measurements of aqueous suspensions of uncoated and DCF-sensitized iron oxide and oxyhydroxide nanoparticles, and an aqueous iron(iii)–dye complex. Following light absorption, excited state relaxation times of the dye of 115...... a four-state model of the dye-sensitized system, finding electron and energy transfer to occur on the same ultrafast timescale. The interfacial electron transfer rates for iron oxides are very close to those previously reported for DCF-sensitized titanium dioxide (for which dye–oxide energy transfer...

  7. Theory and Application of Photoelectron Diffraction for Complex Oxide Systems

    Science.gov (United States)

    Chassé, Angelika; Chassé, Thomas

    2018-06-01

    X-ray photoelectron diffraction (XPD) has been used to investigate film structures and local sites of surface and dopant atoms in complex oxide materials. We have performed angular-resolved measurements of intensity distribution curves (ADCs) and patterns (ADPs) of elemental core level intensities from binary to quaternary mixed oxide samples and compared them to multiple-scattering cluster (MSC) calculations in order to derive information on structural models and related parameters. MSC calculations permitted to describe both bulk diffraction features of binary oxide MnO(001) and the thickness-dependence of the tetragonal distortion of epitaxial MnO films on Ag(001). XPD was further used to investigate the surface termination of perovskite SrTiO3 and BaTiO3 substrates in order to evaluate influence of different ex situ and in situ preparation procedures on the surface layers, which are crucial for quality of following film growth. Despite the similarity of local environments of Sr (Ba) and Ti atoms in the perovskite film structure an angular region in the ADCs was identified as a fingerprint with the help of MSC simulations which provided clear conclusions on the perovskite oxide surfaces. Dopant sites in quaternary perovskite manganites La1-xCaxMnO3, La1-xSrxMnO3, and La1-xCexMnO3 were studied with polar angle scans of the photoemission intensities of host and dopant atoms. Both direct comparison of experimental ADCs and to the simulations within MSC models confirm the occupation of A sites by the dopants and the structural quality of the complex oxide films.

  8. Ultrahigh humidity sensitivity of graphene oxide.

    Science.gov (United States)

    Bi, Hengchang; Yin, Kuibo; Xie, Xiao; Ji, Jing; Wan, Shu; Sun, Litao; Terrones, Mauricio; Dresselhaus, Mildred S

    2013-01-01

    Humidity sensors have been extensively used in various fields, and numerous problems are encountered when using humidity sensors, including low sensitivity, long response and recovery times, and narrow humidity detection ranges. Using graphene oxide (G-O) films as humidity sensing materials, we fabricate here a microscale capacitive humidity sensor. Compared with conventional capacitive humidity sensors, the G-O based humidity sensor has a sensitivity of up to 37800% which is more than 10 times higher than that of the best one among conventional sensors at 15%-95% relative humidity. Moreover, our humidity sensor shows a fast response time (less than 1/4 of that of the conventional one) and recovery time (less than 1/2 of that of the conventional one). Therefore, G-O appears to be an ideal material for constructing humidity sensors with ultrahigh sensitivity for widespread applications.

  9. Preparation and characterization of electrodeposited SnS:In thin films: Effect of In dopant

    Science.gov (United States)

    Kafashan, Hosein; Balak, Zohre

    2017-09-01

    SnS:In thin films were grown on fluorine doped tin oxide (FTO) substrate by cathodic electrodeposition technique. The solution was containing 2 mM SnCl2 and 16 mM Na2S2O3 and different amounts of 1 mM InCl3 as In-dopant. The pH, bath temperature, deposition time, and deposition potential (E) were fixed at 2.1, 60 °C, 30 min, and - 1 V, respectively. The XRD results showed that the synthesized films were polycrystalline orthorhombic SnS. The XPS results demonstrated that the films were composed of Sn, S and In. According to the FESEM images, an increase in In-dopant concentration leads to a change in morphology from grain-like to sheet-like having a nanoscale thickness of 20-80 nm and fiber-like. The PL spectra of undoped SnS exhibited four emission peaks including a UV peak, two blue emission peaks, and an IR emission peak. According to the UV-Vis spectra, the direct band gap of SnS:In thin films was estimated to be 1.40-1.66 eV.

  10. The ionization mechanisms in direct and dopant-assisted atmospheric pressure photoionization and atmospheric pressure laser ionization.

    Science.gov (United States)

    Kauppila, Tiina J; Kersten, Hendrik; Benter, Thorsten

    2014-11-01

    A novel, gas-tight API interface for gas chromatography-mass spectrometry was used to study the ionization mechanism in direct and dopant-assisted atmospheric pressure photoionization (APPI) and atmospheric pressure laser ionization (APLI). Eight analytes (ethylbenzene, bromobenzene, naphthalene, anthracene, benzaldehyde, pyridine, quinolone, and acridine) with varying ionization energies (IEs) and proton affinities (PAs), and four common APPI dopants (toluene, acetone, anisole, and chlorobenzene) were chosen. All the studied compounds were ionized by direct APPI, forming mainly molecular ions. Addition of dopants suppressed the signal of the analytes with IEs above the IE of the dopant. For compounds with suitable IEs or Pas, the dopants increased the ionization efficiency as the analytes could be ionized through dopant-mediated gas-phase reactions, such as charge exchange, proton transfer, and other rather unexpected reactions, such as formation of [M + 77](+) in the presence of chlorobenzene. Experiments with deuterated toluene as the dopant verified that in case of proton transfer, the proton originated from the dopant instead of proton-bound solvent clusters, as in conventional open or non-tight APPI sources. In direct APLI using a 266 nm laser, a narrower range of compounds was ionized than in direct APPI, because of exceedingly high IEs or unfavorable two-photon absorption cross-sections. Introduction of dopants in the APLI system changed the ionization mechanism to similar dopant-mediated gas-phase reactions with the dopant as in APPI, which produced mainly ions of the same form as in APPI, and ionized a wider range of analytes than direct APLI.

  11. Energetics and Defect Interactions of Complex Oxides for Energy Applications

    Science.gov (United States)

    Solomon, Jonathan Michael

    energetic stability for La solid solutions than for Y. Additionally, calculations performed for different atomic configurations show a preference for reduced (increased) oxygen vacancy coordination around La (Y) dopants. The current results are shown to be qualitatively consistent with related calculations and calorimetric measurements of heats of formation in other trivalent doped fluorite oxides, which show a tendency for increasing stability and increasing preference for higher oxygen coordination with increasing size of the trivalent impurity. We expand this investigation by considering a series of trivalent rare earth fission product cations, specifically, Y3+ (1.02 A, Shannon radius with eightfold coordination), Dy3+ (1.03 A), Gd 3+ (1.05 A), Eu3+ (1.07 A), Sm3+ (1.08 A), Pm3+ (1.09 A), Nd3+ (1.11 A), Pr3+ (1.13 A), Ce3+ (1.14 A) and La3+ (1.16 A). Compounds with ionic radius of the M3+ species smaller or larger than 1.09 A are found to have energetically preferred defect ordering arrangements. Systems with preferred defect ordering arrangements are suggestive of defect clustering in short range ordered solid solutions, which is expected to limit oxygen ion mobility and therefore the rate of oxidation of spent nuclear fuel. Finally, the energetics of rare earth substituted (M3+= La, Y, and Nd) UO2 solid solutions are investigated by employing a combination of calorimetric measurements and DFT based computations. The calorimetric studies are performed by Lei Zhang and Professor Alexandra Navrotsky at the University of Calfornia, Davis, as part of a joint computational/ experimental collaborative effort supported through the Materials Science of Actinides Energy Frontier Research Center. Calculated and measured formation enthalpies agree within 10 kJ/mol for stoichiometric oxygen/metal compositions. To better understand the factors governing the stability and defect binding in rare earth substituted urania solid solutions, systematic trends in the energetics are

  12. Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

    International Nuclear Information System (INIS)

    Dangbegnon, J.K.; Talla, K.; Roro, K.T.; Botha, J.R.

    2009-01-01

    Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

  13. Metalorganic chemical vapor deposition of ZnO:N using NO as dopant

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K., E-mail: JulienKouadio.Dangbegnon@nmmu.ac.z [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Talla, K.; Roro, K.T.; Botha, J.R. [Department of Physics, PO Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)

    2009-12-01

    Highly c-axis orientated ZnO was grown by metal organic chemical vapor deposition (MOCVD) using NO as both oxidant and nitrogen dopant source. The properties of the deposited material are investigated by X-ray diffraction to study the crystalline quality of the thin films. Photoluminescence measurements are used to determine the optical properties of the material as a function of VI/II ratio and post growth-annealing temperature. Two transitions appear at 3.228 and 3.156 eV and are interpreted as involving active nitrogen acceptors. An increase in the NO flow increases the concentration of nitrogen in the films, which are activated by subsequent annealing at 600 deg. C in an oxygen ambient.

  14. Manipulation and analysis of a single dopant atom in GaAs

    NARCIS (Netherlands)

    Wijnheijmer, A.P.

    2011-01-01

    This thesis focuses on the manipulation and analysis of single dopant atoms in GaAs by scanning tunneling microscopy (STM) and spectroscopy (STS) at low temperatures. The observation of ionization rings is one of the key results, showing that we can control the charge state of a single dopant atom

  15. Extended OLED operational lifetime through phosphorescent dopant profile management

    Science.gov (United States)

    Forrest, Stephen R.; Zhang, Yifan

    2017-05-30

    This disclosure relates, at least in part, an organic light emitting device, which in some embodiments comprises an anode; a cathode; a first emissive layer disposed between the anode and the cathode, the first emissive layer comprising an electron transporting compound and a phosphorescent emissive dopant compound; and wherein the phosphorescent emissive dopant compound has a concentration gradient, in the emissive layer, which varies from the cathode side of the first emissive layer to the anode side of the emissive layer.

  16. Magnetic properties of ZnO nanowires with Li dopants and Zn vacancies

    Energy Technology Data Exchange (ETDEWEB)

    Guan, Xinhong; Cai, Ningning [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, P.O. Box 72, Beijing 100876 (China); Yang, Chuanghua [School of Physics and Telecommunication Engineering, Shanxi University of Technology (SNUT), Hanzhong 723001, Shanxi (China); Chen, Jun [Beijing Applied Physics and Computational Mathematics, Beijing 100088 (China); Lu, Pengfei, E-mail: photon.bupt@gmail.com [Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), Ministry of Education, P.O. Box 72, Beijing 100876 (China)

    2016-04-30

    The electronic and magnetic properties of ZnO nanowire with Li dopants and vacancies have been investigated using first-principles density functional theory. It is found that the Zn vacancy can induce magnetism while increasing the formation energy of the system. However, the calculated results indicate that the introduction of Li-dopants will reduce the formation energy of system. We also have studied the magnetic couplings with vacancies as well as their corresponding configurations with Li-dopants for four configurations of ZnO nanowires. The results show that ferromagnetic properties can be improved/reversed after the introduction of Li-dopants. Ferromagnetic mechanism is originated from the fierce p–p hybridization of O near the Fermi level. We find that ferromagnetism of Li-doped ZnO nanowires with Zn vacancies can be realized at room temperature and they are promising spintronic materials. - Highlights: • Li-dopants will reduce the formation energy of ZnO nanowires with Zn vacancy. • The fierce p–p hybridization of O near Fermi level is responsible for FM properties. • Li-doped ZnO–V{sub Zn} nanowire is a promising FM semiconductor material.

  17. Finite element simulations of electrostatic dopant potentials in thin semiconductor specimens for electron holography.

    Science.gov (United States)

    Somodi, P K; Twitchett-Harrison, A C; Midgley, P A; Kardynał, B E; Barnes, C H W; Dunin-Borkowski, R E

    2013-11-01

    Two-dimensional finite element simulations of electrostatic dopant potentials in parallel-sided semiconductor specimens that contain p-n junctions are used to assess the effect of the electrical state of the surface of a thin specimen on projected potentials measured using off-axis electron holography in the transmission electron microscope. For a specimen that is constrained to have an equipotential surface, the simulations show that the step in the projected potential across a p-n junction is always lower than would be predicted from the properties of the bulk device, but is relatively insensitive to the value of the surface state energy, especially for thicker specimens and higher dopant concentrations. The depletion width measured from the projected potential, however, has a complicated dependence on specimen thickness. The results of the simulations are of broader interest for understanding the influence of surfaces and interfaces on electrostatic potentials in nanoscale semiconductor devices. © 2013 Elsevier B.V. All rights reserved.

  18. Carrier illumination measurement of dopant lateral diffusion

    International Nuclear Information System (INIS)

    Budiarto, E.; Segovia, M.; Borden, P.; Felch, S.

    2005-01-01

    This paper describes the application of the carrier illumination technique to non-destructively measure the lateral diffusion of implanted dopants after annealing. Experiments to validate the feasibility of this method employed test structures with a constant line width of 300 nm and varying undoped spaces of 100-5000 nm. The test patterns were implanted with a p-type dopant and annealed in a 3 x 3 matrix. For each implant condition, the measured lateral diffusion was found to increase with annealing temperature, as expected. More interestingly, the lateral diffusion was not observed to relate to the vertical diffusion by a fixed proportionality factor, as is usually assumed. The ratio of lateral to vertical diffusion varies with annealing temperature, with a trend that depends on the implant condition

  19. Charge transport in metal oxide nanocrystal-based materials

    Science.gov (United States)

    Runnerstrom, Evan Lars

    There is probably no class of materials more varied, more widely used, or more ubiquitous than metal oxides. Depending on their composition, metal oxides can exhibit almost any number of properties. Of particular interest are the ways in which charge is transported in metal oxides: devices such as displays, touch screens, and smart windows rely on the ability of certain metal oxides to conduct electricity while maintaining visible transparency. Smart windows, fuel cells, and other electrochemical devices additionally rely on efficient transport of ionic charge in and around metal oxides. Colloidal synthesis has enabled metal oxide nanocrystals to emerge as a relatively new but highly tunable class of materials. Certain metal oxide nanocrystals, particularly highly doped metal oxides, have been enjoying rapid development in the last decade. As in myriad other materials systems, structure dictates the properties of metal oxide nanocrystals, but a full understanding of how nanocrystal synthesis, the processing of nanocrystal-based materials, and the structure of nanocrystals relate to the resulting properties of nanocrystal-based materials is still nascent. Gaining a fundamental understanding of and control over these structure-property relationships is crucial to developing a holistic understanding of metal oxide nanocrystals. The unique ability to tune metal oxide nanocrystals by changing composition through the introduction of dopants or by changing size and shape affords a way to study the interplay between structure, processing, and properties. This overall goal of this work is to chemically synthesize colloidal metal oxide nanocrystals, process them into useful materials, characterize charge transport in materials based on colloidal metal oxide nanocrystals, and develop ways to manipulate charge transport. In particular, this dissertation characterizes how the charge transport properties of metal oxide nanocrystal-based materials depend on their processing and

  20. Three-dimensional analysis of Eu dopant atoms in Ca-α-SiAlON via through-focus HAADF-STEM imaging

    Energy Technology Data Exchange (ETDEWEB)

    Saito, Genki, E-mail: genki@eng.hokudai.ac.jp; Yamaki, Fuuta; Kunisada, Yuji; Sakaguchi, Norihito; Akiyama, Tomohiro

    2017-04-15

    Highlights: • Through-focus HAADF-STEM imaging was studied. • Spatial distribution of Eu atoms in Ca-α-SiAlON was analyzed. • A large convergence semi-angle increased the depth resolution. • The radial distribution function of Eu dopants was analyzed. - Abstract: Three-dimensional (3D) distributional analysis of individual dopant atoms in materials is important to development of optical, electronic, and magnetic materials. In this study, we adopted through-focus high-angle annular dark-field (HAADF) imaging for 3D distributional analysis of Eu dopant atoms in Ca-α-SiAlON phosphors. In this context, the effects of convergence semi-angle and Eu z-position on the HAADF image contrast were investigated. Multi-slice image simulation revealed that the contrast of the dopant site was sensitive to change of the defocus level. When the defocus level matched the depth position of a Eu atom, the contrast intensity was significantly increased. The large convergence semi-angle greatly increased the depth resolution because the electron beam tends spread instead of channeling along the atomic columns. Through-focus HAADF-STEM imaging was used to analyze the Eu atom distribution surrounding 10 nm cubes with defocus steps of 0.68 nm each. The contrast depth profile recorded with a narrow step width clearly analyzed the possible depth positions of Eu atoms. The radial distribution function obtained for the Eu dopants was analyzed using an atomic distribution model that was based on the assumption of random distribution. The result suggested that the Ca concentration did not affect the Eu distribution. The decreased fraction of neighboring Eu atoms along z-direction might be caused by the enhanced short-range Coulomb-like repulsive forces along the z-direction.

  1. The relationship between the anoxic sensitivity and the extent of sensitization by nitrous oxide

    International Nuclear Information System (INIS)

    Ewing, D.; Walton, H.L.; Guilfoil, D.S.; Ohm, M.B.

    1991-01-01

    Nitrous oxide reacts during irradiation to increase the yield of ·OH, a radical many believe to be a major cause of lethality. Logically, one would expect N 2 O to be a radiation sensitizer. In some instances it is, while in others it is not. In some cases we can explain why N 2 O fails to sensitize; factors such as dose rate, cell concentration, buffer composition and ionic strength all influence when N 2 O will sensitize and if it sensitizes, by what magnitude. Based on the results presented here with multiple strains of procaryotic and eucaryotic cells, we believe the anoxic sensitivity is another critical factor that governs whether N 2 O will sensitize. Our data, with data from the literature, show a relationship between the anoxic sensitivity and the N 2 O enhancement ratio. N 2 O does not sensitize in vitro unless the anoxic sensitivity (inactivation constant, K) is less than ∼ 0.2 daGy -1 . (author)

  2. Photo-dissociation of hydrogen passivated dopants in gallium arsenide

    International Nuclear Information System (INIS)

    Tong, L.; Larsson, J.A.; Nolan, M.; Murtagh, M.; Greer, J.C.; Barbe, M.; Bailly, F.; Chevallier, J.; Silvestre, F.S.; Loridant-Bernard, D.; Constant, E.; Constant, F.M.

    2002-01-01

    A theoretical and experimental study of the photo-dissociation mechanisms of hydrogen passivated n- and p-type dopants in gallium arsenide is presented. The photo-induced dissociation of the Si Ga -H complex has been observed for relatively low photon energies (3.48 eV), whereas the photo-dissociation of C As -H is not observed for photon energies up to 5.58 eV. This fundamental difference in the photo-dissociation behavior between the two dopants is explained in terms of the localized excitation energies about the Si-H and C-H bonds

  3. Germania and Alumina Dopant Diffusion and Viscous Flow Effects at Preparation of Doped Optical Fibers

    Directory of Open Access Journals (Sweden)

    Jens Kobelke

    2017-01-01

    Full Text Available We report on germania and alumina dopant profile shift effects at preparation of compact optical fibers using packaging methods (Stack-and-Draw method, Rod-in-Tube (RiT technique. The sintering of package hollow volume by viscous flow results in a shift of the core-pitch ratio in all-solid microstructured fibers. The ratio is increased by about 5% in the case of a hexagonal package. The shift by diffusion effects of both dopants is simulated for typical slow speed drawing parameters. Thermodynamic approximations of surface dissociation of germania doped silica suggest the need of an adequate undoped silica barrier layer to prevent an undesired bubble formation at fiber drawing. In contrast, alumina doping does not estimate critical dissociation effects with vaporous aluminium oxide components. We report guide values of diffusion length of germania and alumina for the drawing process by kinetic approximation. The germania diffusion involves a small core enlargement, typically in the sub-micrometer scale. Though, the alumina diffusion enlarges it by a few micrometers. A drawn pure alumina preform core rod transforms to an amorphous aluminosilicate core with a molar alumina concentration of only about 50% and a non-gaussian concentration profile.

  4. Effect of thermal oxidation treatment on pH sensitivity of AlGaN/GaN heterostructure ion-sensitive field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Lei; Bu, Yuyu [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan); Li, Liuan, E-mail: liliuan@mail.sysu.edu.cn [School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275 (China); Ao, Jin-Ping, E-mail: jpao@ee.tokushima-u.ac.jp [Institute of Science and Technology, Tokushima University, Tokushima 770-8506 (Japan)

    2017-07-31

    Highlights: • AlGaN/GaN ISFETs were fabricated and evaluated with thermal oxidation treatment. • Sensitivity was improved to 57.7 mV/pH after 700 °C treatment. • Sensitivity became poor after 800 °C treatment. • The pure α-Al{sub 2}O{sub 3} crystal phase generated on the surface of the 700 °C treatment sample. • Ga{sub 2}O{sub 3} phase content in the metal oxide layer increased after 800 °C treatment. - Abstract: In this article, AlGaN/GaN heterostructure ion-sensitive field-effect transistors (ISFETs) were prepared and evaluated by thermal oxidation treatment on the AlGaN surface. The ISFETs were fabricated on the AlGaN/GaN heterostructure and then thermally oxidized with dry oxygen in 600, 700, and 800 °C, respectively. It indicates that the performance of the AlGaN/GaN heterostructure ISFETs, such as noise and sensitivity, has been improved owing to the thermal oxidation treatment process at different temperatures. The X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) results indicate that after thermal oxidation treatment at different temperatures, hydroxide who possesses high surface state density will transfer to oxide owing to the higher chemical stability of the latter. Moreover, a crystalline α-Al{sub 2}O{sub 3} phase generated at 700 °C can not only provide a relatively smooth surface, but also improve the sensitivity to 57.7 mV/pH for the AlGaN/GaN heterostructure ISFETs, which is very close to the Nernstian limit.

  5. Deprotonation effect of tetrahydrofuran-2-carbonitrile buffer gas dopant in ion mobility spectrometry.

    Science.gov (United States)

    Fernandez-Maestre, Roberto; Meza-Morelos, Dairo; Wu, Ching

    2016-06-15

    When dopants are introduced into the buffer gas of an ion mobility spectrometer, spectra are simplified due to charge competition. We used electrospray ionization to inject tetrahydrofuran-2-carbonitrile (F, 2-furonitrile or 2-furancarbonitrile) as a buffer gas dopant into an ion mobility spectrometer coupled to a quadrupole mass spectrometer. Density functional theory was used for theoretical calculations of dopant-ion interaction energies and proton affinities, using the hybrid functional X3LYP/6-311++(d,p) with the Gaussian 09 program that accounts for the basis set superposition error; analytes structures and theoretical calculations with Gaussian were used to explain the behavior of the analytes upon interaction with F. When F was used as a dopant at concentrations below 1.5 mmol m(-3) in the buffer gas, ions were not observed for α-amino acids due to charge competition with the dopant; this deprotonation capability arises from the production of a dimer with a high formation energy that stabilized the positive charge and created steric hindrance that deterred the equilibrium with analyte ions. F could not completely strip other compounds of their charge because they either showed steric hindrance at the charge site that deterred the approach of the dopant (2,4-lutidine, and DTBP), formed intramolecular bonds that stabilized the positive charge (atenolol), had high proton affinity (2,4-lutidine, DTBP, valinol and atenolol), or were inherently ionic (tetraalkylammonium ions). This selective deprotonation suggests the use of F to simplify spectra of complex mixtures in ion mobility and mass spectrometry in metabolomics, proteomics and other studies that generate complex spectra with thousands of peaks. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

  6. One- and two-dimensional dopant/carrier profiling for ULSI

    Science.gov (United States)

    Vandervorst, W.; Clarysse, T.; De Wolf, P.; Trenkler, T.; Hantschel, T.; Stephenson, R.; Janssens, T.

    1998-11-01

    Dopant/carrier profiles constitute the basis of the operation of a semiconductor device and thus play a decisive role in the performance of a transistor and are subjected to the same scaling laws as the other constituents of a modern semiconductor device and continuously evolve towards shallower and more complex configurations. This evolution has increased the demands on the profiling techniques in particular in terms of resolution and quantification such that a constant reevaluation and improvement of the tools is required. As no single technique provides all the necessary information (dopant distribution, electrical activation,..) with the requested spatial and depth resolution, the present paper attempts to provide an assessment of those tools which can be considered as the main metrology technologies for ULSI-applications. For 1D-dopant profiling secondary ion mass spectrometry (SIMS) has progressed towards a generally accepted tool meeting the requirements. For 1D-carrier profiling spreading resistance profiling and microwave surface impedance profiling are envisaged as the best choices but extra developments are required to promote them to routinely applicable methods. As no main metrology tool exist for 2D-dopant profiling, main emphasis is on 2D-carrier profiling tools based on scanning probe microscopy. Scanning spreading resistance (SSRM) and scanning capacitance microscopy (SCM) are the preferred methods although neither of them already meets all the requirements. Complementary information can be extracted from Nanopotentiometry which samples the device operation in more detail. Concurrent use of carrier profiling tools, Nanopotentiometry, analysis of device characteristics and simulations is required to provide a complete characterization of deep submicron devices.

  7. Investigation of the ionization mechanism of polycyclic aromatic hydrocarbons using an ethanol/bromobenzene/chlorobenzene/anisole mixture as a dopant in liquid chromatography/atmospheric pressure photoionization mass spectrometry

    KAUST Repository

    Amad, Maan H.

    2012-09-23

    RATIONALE An ethanol-based multicomponent dopant consisting of ethanol/chlorobenzene/bromobenzene/anisole (98.975:0.1:0.9:0.025, v/v/v/v) has been used as a dopant for atmospheric pressure photoionization (APPI) of polycyclic aromatic hydrocarbons (PAHs). In this study the mechanism of ionization of PAHs assisted by the ethanol-based multicomponent dopant is investigated. METHODS The reactant background cluster ions of the ethanol-based multicomponent dopant observed in the positive ion APPI were studied. These studies were performed to investigate the mechanism behind the generation of a molecular radical cation (M +•) for PAHs by APPI assisted by the ethanol-based multicomponent dopant. Full scan and MS/MS analyses were conducted using an LTQ Orbitrap mass spectrometer. The effect of acidification of the mobile phase on the dopant cluster ion formation was also investigated. RESULTS With the ethanol-based multicomponent dopant, a single type of molecular radical cation M +• was observed for the studied PAHs. The characteristic ion signal of the multicomponent dopant mixture consisted of mainly anisole photoions at m/z 108.05697 and its adduct ions at m/z 124.05188 and 164.07061. The anisole ion response at m/z 108.05697 was stable in the presence of acetonitrile, methanol, water and 0.1% formic acid mobile phase composition. CONCLUSIONS The abundance formation of anisole photoions shows the universality of this multicomponent dopant in ionizing compounds with ionization energy ranging from 7.1-8.2 eV. Since the ionization energy of anisole is 8.2 eV and is lower than those of chlorobenzene (9.07 eV) and bromobenzene (9.0 eV), the mechanism of formation of anisole photoions even with its very minute amounts was not only governed by its photoionization by the krypton lamp photon energy (10.0 eV and 10.6 eV), but also by charge transfer from bromobenzene and chlorobenzene radical cations. PAH molecules were mainly ionized by charge transfer reaction from

  8. Investigation of the ionization mechanism of polycyclic aromatic hydrocarbons using an ethanol/bromobenzene/chlorobenzene/anisole mixture as a dopant in liquid chromatography/atmospheric pressure photoionization mass spectrometry

    KAUST Repository

    Amad, Maan H.; Sioud, Salim

    2012-01-01

    RATIONALE An ethanol-based multicomponent dopant consisting of ethanol/chlorobenzene/bromobenzene/anisole (98.975:0.1:0.9:0.025, v/v/v/v) has been used as a dopant for atmospheric pressure photoionization (APPI) of polycyclic aromatic hydrocarbons (PAHs). In this study the mechanism of ionization of PAHs assisted by the ethanol-based multicomponent dopant is investigated. METHODS The reactant background cluster ions of the ethanol-based multicomponent dopant observed in the positive ion APPI were studied. These studies were performed to investigate the mechanism behind the generation of a molecular radical cation (M +•) for PAHs by APPI assisted by the ethanol-based multicomponent dopant. Full scan and MS/MS analyses were conducted using an LTQ Orbitrap mass spectrometer. The effect of acidification of the mobile phase on the dopant cluster ion formation was also investigated. RESULTS With the ethanol-based multicomponent dopant, a single type of molecular radical cation M +• was observed for the studied PAHs. The characteristic ion signal of the multicomponent dopant mixture consisted of mainly anisole photoions at m/z 108.05697 and its adduct ions at m/z 124.05188 and 164.07061. The anisole ion response at m/z 108.05697 was stable in the presence of acetonitrile, methanol, water and 0.1% formic acid mobile phase composition. CONCLUSIONS The abundance formation of anisole photoions shows the universality of this multicomponent dopant in ionizing compounds with ionization energy ranging from 7.1-8.2 eV. Since the ionization energy of anisole is 8.2 eV and is lower than those of chlorobenzene (9.07 eV) and bromobenzene (9.0 eV), the mechanism of formation of anisole photoions even with its very minute amounts was not only governed by its photoionization by the krypton lamp photon energy (10.0 eV and 10.6 eV), but also by charge transfer from bromobenzene and chlorobenzene radical cations. PAH molecules were mainly ionized by charge transfer reaction from

  9. The relationship between the anoxic sensitivity and the extent of sensitization by nitrous oxide

    Energy Technology Data Exchange (ETDEWEB)

    Ewing, D.; Walton, H.L.; Guilfoil, D.S.; Ohm, M.B. (Hahnemann Univ., Philadelphia, PA (USA). Dept. of Radiation Oncology and Nuclear Medicine)

    1991-03-01

    Nitrous oxide reacts during irradiation to increase the yield of center dotOH, a radical many believe to be a major cause of lethality. Logically, one would expect N{sub 2}O to be a radiation sensitizer. In some instances it is, while in others it is not. In some cases we can explain why N{sub 2}O fails to sensitize; factors such as dose rate, cell concentration, buffer composition and ionic strength all influence when N{sub 2}O will sensitize and if it sensitizes, by what magnitude. Based on the results presented here with multiple strains of procaryotic and eucaryotic cells, we believe the anoxic sensitivity is another critical factor that governs whether N{sub 2}O will sensitize. Our data, with data from the literature, show a relationship between the anoxic sensitivity and the N{sub 2}O enhancement ratio. N{sub 2}O does not sensitize in vitro unless the anoxic sensitivity (inactivation constant, K) is less than {similar to} 0.2 daGy{sup -1}. (author).

  10. Enhancement in sensitivity of graphene-based zinc oxide assisted bimetallic surface plasmon resonance (SPR) biosensor

    Science.gov (United States)

    Kumar, Rajeev; Kushwaha, Angad S.; Srivastava, Monika; Mishra, H.; Srivastava, S. K.

    2018-03-01

    In the present communication, a highly sensitive surface plasmon resonance (SPR) biosensor with Kretschmann configuration having alternate layers, prism/zinc oxide/silver/gold/graphene/biomolecules (ss-DNA) is presented. The optimization of the proposed configuration has been accomplished by keeping the constant thickness of zinc oxide (32 nm), silver (32 nm), graphene (0.34 nm) layer and biomolecules (100 nm) for different values of gold layer thickness (1, 3 and 5 nm). The sensitivity of the proposed SPR biosensor has been demonstrated for a number of design parameters such as gold layer thickness, number of graphene layer, refractive index of biomolecules and the thickness of biomolecules layer. SPR biosensor with optimized geometry has greater sensitivity (66 deg/RIU) than the conventional (52 deg/RIU) as well as other graphene-based (53.2 deg/RIU) SPR biosensor. The effect of zinc oxide layer thickness on the sensitivity of SPR biosensor has also been analysed. From the analysis, it is found that the sensitivity increases significantly by increasing the thickness of zinc oxide layer. It means zinc oxide intermediate layer plays an important role to improve the sensitivity of the biosensor. The sensitivity of SPR biosensor also increases by increasing the number of graphene layer (upto nine layer).

  11. Highly Sensitive and Selective Sensor Chips with Graphene-Oxide Linking Layer

    DEFF Research Database (Denmark)

    Stebunov, Yury V.; Aftenieva, Olga A.; Arsenin, Aleksey V.

    2015-01-01

    sensor chip for SPR biosensors based on graphene-oxide linking layers. The biosensing assay model was based on a graphene oxide film containing streptavidin. The proposed sensor chip has three times higher sensitivity than the carboxymethylated dextran surface of a commercial sensor chip. Moreover...

  12. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis

    International Nuclear Information System (INIS)

    Hartner, Sonja; Schulz, Christof; Wiggers, Hartmut; Ali, Moazzam; Winterer, Markus

    2009-01-01

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  13. Electrical properties of aluminum-doped zinc oxide (AZO) nanoparticles synthesized by chemical vapor synthesis.

    Science.gov (United States)

    Hartner, Sonja; Ali, Moazzam; Schulz, Christof; Winterer, Markus; Wiggers, Hartmut

    2009-11-04

    Aluminum-doped zinc oxide nanoparticles have been prepared by chemical vapor synthesis, which facilitates the incorporation of a higher percentage of dopant atoms, far above the thermodynamic solubility limit of aluminum. The electrical properties of aluminum-doped and undoped zinc oxide nanoparticles were investigated by impedance spectroscopy. The impedance is measured under hydrogen and synthetic air between 323 and 673 K. The measurements under hydrogen as well as under synthetic air show transport properties depending on temperature and doping level. Under hydrogen atmosphere, a decreasing conductivity with increasing dopant content is observed, which can be explained by enhanced scattering processes due to an increasing disorder in the nanocrystalline material. The temperature coefficient for the doped samples switches from positive temperature coefficient behavior to negative temperature coefficient behavior with increasing dopant concentration. In the presence of synthetic air, the conductivity firstly increases with increasing dopant content by six orders of magnitude. The origin of the increasing conductivity is the generation of free charge carriers upon dopant incorporation. It reaches its maximum at a concentration of 7.7% of aluminum, and drops for higher doping levels. In all cases, the conductivity under hydrogen is higher than under synthetic air and can be changed reversibly by changing the atmosphere.

  14. Transient enhanced diffusion of dopants in preamorphized Si layers

    International Nuclear Information System (INIS)

    Claverie, A.; Bonafos, C.; Omri, M.; Mauduit, B. de; Ben Assayag, G.; Martinez, A.; Alquier, D.; Mathiot, D.

    1997-01-01

    Transient Enhanced Diffusion (TED) of dopants in Si is the consequence of the evolution, upon annealing, of a large supersaturation of Si self-interstitial atoms left after ion bombardment. In the case of amorphizing implants, this supersaturation is located just beneath the c/a interface and evolves through the nucleation and growth of End-Of-Range (EOR) defects. For this reason, the authors discuss here the relation between TED and EOR defects. Modelling of the behavior of these defects upon annealing allows one to understand why and how they affect dopant diffusion. This is possible through the development of the Ostwald ripening theory applied to extrinsic dislocation loops. This theory is shown to be readily able to quantitatively describe the evolution of the defect population (density, size) upon annealing and gives access to the variations of the mean supersaturation of Si self-interstitial atoms between the loops and responsible for TED. This initial supersaturation is, before annealing, at least 5 decades larger than the equilibrium value and exponentially decays with time upon annealing with activation energies that are the same than the ones observed for TED. It is shown that this time decay is precisely at the origin of the transient enhancement of boron diffusivity through the interstitial component of boron diffusion. Side experiments shed light on the effect of the proximity of a free surface on the thermal behavior of EOR defects and allow us to quantitatively describe the space and time evolutions of boron diffusivity upon annealing of preamorphized Si layers

  15. Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules.

    Science.gov (United States)

    Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert

    2016-03-15

    -Dirac occupation of which ultimately determines the doping efficiency, thus emerges as key challenge. As a first step, the formation of charge transfer complexes is identified as being detrimental to the doping efficiency, which suggests sterically shielding the functional core of dopant molecules as an additional design rule to complement the requirement of low ionization energies or high electron affinities in efficient n-type or p-type dopants, respectively. In an extended outlook, we finally argue that, to fully meet this challenge, an improved understanding is required of just how the admixture of dopant molecules to organic semiconductors does affect the density of states: compared with their inorganic counterparts, traps for charge carriers are omnipresent in organic semiconductors due to structural and chemical imperfections, and Coulomb attraction between ionized dopants and free charge carriers is typically stronger in organic semiconductors owing to their lower dielectric constant. Nevertheless, encouraging progress is being made toward developing a unifying picture that captures the entire range of doping induced phenomena, from ion-pair to complex formation, in both conjugated polymers and molecules. Once completed, such a picture will provide viable guidelines for synthetic and supramolecular chemistry that will enable further technological advances in organic and hybrid organic/inorganic devices.

  16. Influence of the dopant during the one step mechano-chemical synthesis of sodium alanate

    International Nuclear Information System (INIS)

    Rongeat, C; Geipel, C; Llamas-Jansa, I; Schultz, L; Gutfleisch, O

    2009-01-01

    High-pressure reactive milling under hydrogen atmosphere is used for the one-step synthesis of doped sodium alanate. In-situ monitoring of the pressure and the temperature inside the vial gives a direct feedback about the reactions occurring during the milling. This information is used to study the influence of the dopant during synthesis, e.g. the amount of dopant added. The study of the pressure variations during milling is a reliable tool for screening the efficiency of different dopants.

  17. High-resolution three-dimensional mapping of semiconductor dopant potentials

    DEFF Research Database (Denmark)

    Twitchett, AC; Yates, TJV; Newcomb, SB

    2007-01-01

    Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how a combin......Semiconductor device structures are becoming increasingly three-dimensional at the nanometer scale. A key issue that must be addressed to enable future device development is the three-dimensional mapping of dopant distributions, ideally under "working conditions". Here we demonstrate how...... a combination of electron holography and electron tomography can be used to determine quantitatively the three-dimensional electrostatic potential in an electrically biased semiconductor device with nanometer spatial resolution....

  18. A new method to characterize dopant profiles in NMOSFETs using conventional transmission electron microscopy

    International Nuclear Information System (INIS)

    Kawamura, Kazuo; Ikeda, Kazuto; Terauchi, Masami

    2004-01-01

    We have developed a new method using conventional transmission electron microscopy (TEM) to obtain two dimensional dopant profiles in silicon and applied it to 40 nm-gate-length N + /p metal oxide semiconductor field effect transistors (MOSFETs). The results are consistent with those of selective-chemically etched samples observed by TEM. This method, using focused ion beam (FIB) sample preparation and conventional TEM, has the great advantage of simple sample preparation and high spatial resolution compared to other characterization methods, such as atomic capacitance microscopy, spreading resistance microscopy, and TEM combined with selective chemical etching. This indicates that this method can be applicable to the analysis of FETs at the 65 nm or smaller node

  19. Oxide nanomembrane hybrids with enhanced mechano- and thermo-sensitivity for semitransparent epidermal electronics.

    Science.gov (United States)

    Park, Minjoon; Do, Kyungsik; Kim, Jaemin; Son, Donghee; Koo, Ja Hoon; Park, Jinkyung; Song, Jun-Kyul; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong

    2015-05-01

    Oxide nanomembrane hybrids with enhanced mechano- and thermo-sensitivity for semitransparent epidermal electronics are developed. The use of nanomaterials (single wall nanotubes and silver nanoparticles) embedded in the oxide nanomembranes significantly enhances mechanical and thermal sensitivities. These mechanical and thermal sensors are utilized in wheelchair control and hypothermia detection, which are useful for patients with strokes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Local symmetric distortion boosted photon up-conversion and thermometric sensitivity in lanthanum oxide nanospheres.

    Science.gov (United States)

    Suo, Hao; Zhao, Xiaoqi; Zhang, Zhiyu; Shi, Rui; Wu, Yanfang; Xiang, Jinmeng; Guo, Chongfeng

    2018-05-17

    It is essential to simultaneously boost the luminescence intensity and thermometric sensitivity of up-converted optical thermometers towards potential biomedical sensing applications. Herein, the effects of local site symmetry on the up-conversion (UC) emission and thermal sensing ability in trigonal-phased La2O3:Er3+/Yb3+ nanospheres were qualitatively explored using cubic-phased Lu2O3 and Y2O3 with a similar shape and phonon energy as contrasts. Under 980 nm light excitation, much stronger UC emissions were detected in La2O3 samples than that in cubic Lu2O3 and Y2O3 samples, and the possible mechanisms were elaborately proposed using Eu3+ as a luminescent probe. Thermo-responsive emission intensity from 2H11/2/4S3/2 levels was monitored to evaluate the absolute sensitivity of three samples, which strongly depends on the dopant-induced local site symmetric distortions according to the Judd-Ofelt theory. The potentiality of La2O3:Er3+/Yb3+ for sub-tissue thermometry was also validated by ex vivo experiments. Results open a promising avenue for realizing highly sensitive thermometry with a large signal-to-noise ratio in sub-tissues via finely tailoring the local site symmetry.

  1. Observation of two-dimensional p-type dopant diffusion across a p+-InP/n–-InGaAs interface using scanning electron microscopy

    International Nuclear Information System (INIS)

    Tsurumi, Daisuke; Hamada, Kotaro; Kawasaki, Yuji

    2013-01-01

    Scanning electron microscopy (SEM) with potential calculations has been shown to be effective for the detection of p-type dopant diffusion, even across a Zn doped p + -InP/non-doped n – -InGaAs/n + -InP heterojunction. Heterojunction samples were observed using SEM and the electrostatic potential was calculated from Zn concentration profiles obtained by secondary ion mass spectrometry. The sensitivity of SEM for the potential was derived from the SEM observations and potential calculation results. The results were then used to investigate the dependence of the SEM contrast on the Zn diffusion length across the p + -InP/non-doped n – -InGaAs interface. Accurate dopant mapping was difficult when the Zn diffusion length was shorter than 30 nm, because the heterojunction affects the potential at the interface. However, accurate dopant mapping was possible when the Zn diffusion length was longer than 30 nm, because the factor dominating the potential variation was not the heterojunction, but rather Zn diffusion 30 nm distant from the interface. Thus, Zn diffusion further than 30 nm from a Zn-doped p + -InP/non-doped n – -InGaAs interface can be effectively detected by secondary electron (SE) imaging. SE imaging with potential calculations can be widely used for accurate dopant mapping, even at heterojunctions, and is, therefore, expected to be of significant assistance to the compound semiconductor industry.

  2. Bistable Si dopants in the GaAs (1 1 0) surface

    International Nuclear Information System (INIS)

    Smakman, E P; Koenraad, P M

    2015-01-01

    In this review, recent work is discussed on bistable Si dopants in the GaAs (1 1 0) surface, studied by scanning tunneling microscopy (STM). The bistability arises because the dopant atom can switch between a positive and a negative charge state, which are associated with two different lattice configurations. Manipulation of the Si atom charge configuration is achieved by tuning the local band bending with the STM tip. Furthermore, illuminating the sample with a laser also influences the charge state, allowing the operation of the dopant atom as an optical switch. The switching dynamics without illumination is investigated in detail as a function of temperature, lateral tip position, and applied tunneling conditions. A physical model is presented that independently describes the thermal and quantum tunneling contributions to the switching frequency and charge state occupation of a single Si atom. The basic functionality of a memory cell is demonstrated employing a single bistable Si dopant as the active element, using the STM tip as a gate to write and read the information. (topical review)

  3. Modeling the radical chemistry in an oxidation flow reactor: radical formation and recycling, sensitivities, and the OH exposure estimation equation.

    Science.gov (United States)

    Li, Rui; Palm, Brett B; Ortega, Amber M; Hlywiak, James; Hu, Weiwei; Peng, Zhe; Day, Douglas A; Knote, Christoph; Brune, William H; de Gouw, Joost A; Jimenez, Jose L

    2015-05-14

    Oxidation flow reactors (OFRs) containing low-pressure mercury (Hg) lamps that emit UV light at both 185 and 254 nm ("OFR185") to generate OH radicals and O3 are used in many areas of atmospheric science and in pollution control devices. The widely used potential aerosol mass (PAM) OFR was designed for studies on the formation and oxidation of secondary organic aerosols (SOA), allowing for a wide range of oxidant exposures and short experiment duration with reduced wall loss effects. Although fundamental photochemical and kinetic data applicable to these reactors are available, the radical chemistry and its sensitivities have not been modeled in detail before; thus, experimental verification of our understanding of this chemistry has been very limited. To better understand the chemistry in the OFR185, a model has been developed to simulate the formation, recycling, and destruction of radicals and to allow the quantification of OH exposure (OHexp) in the reactor and its sensitivities. The model outputs of OHexp were evaluated against laboratory calibration experiments by estimating OHexp from trace gas removal and were shown to agree within a factor of 2. A sensitivity study was performed to characterize the dependence of the OHexp, HO2/OH ratio, and O3 and H2O2 output concentrations on reactor parameters. OHexp is strongly affected by the UV photon flux, absolute humidity, reactor residence time, and the OH reactivity (OHR) of the sampled air, and more weakly by pressure and temperature. OHexp can be strongly suppressed by high OHR, especially under low UV light conditions. A OHexp estimation equation as a function of easily measurable quantities was shown to reproduce model results within 10% (average absolute value of the relative errors) over the whole operating range of the reactor. OHexp from the estimation equation was compared with measurements in several field campaigns and shows agreement within a factor of 3. The improved understanding of the OFR185 and

  4. Date Sensitive Computing Problems: Understanding the Threat

    Science.gov (United States)

    1998-08-29

    equipment on Earth.3 It can also interfere with electromagnetic signals from such devices as cell phones, radio, televison , and radar. By itself, the ...spacecraft. Debris from impacted satellites will add to the existing orbital debris problem, and could eventually cause damage to other satellites...Date Sensitive Computing Problems Understanding the Threat Aug. 17, 1998 Revised Aug. 29, 1998 Prepared by: The National Crisis Response

  5. Effects on Implosion Characteristics of High-Z Dopant Profiles in ICF Ignition Capsule Ablators

    Science.gov (United States)

    Li, Yongsheng; Wang, Min; Gu, Jianfa; Zou, Shiyang; Kang, Dongguo; Ye, Wenhua; Zhang, Weiyan

    2012-10-01

    For ignition target design (ITD) of indirect drive ICF [J. Lindl, PoP 2, 3933(1995)], high-Z dopants in capsule ablators were used to prevent preheat of DTadjacentablators by Au M-band flux in laser-driven gold Hohlraums, therefore to restrain the growth of high-mode hydro-instabilities and to improve the targetrobustness.Based on NIC's Rev. 5 ITD[S. W. Haan et al., PoP 18, 051001(2011)], we investigated the effect of thickness and dopant concentration of doped layers on implosion characteristics, including the Atwood number (AWN) of fuel-ablator interface, the density gradient scale length (DGSL) of ablation front and the implosion velocity (VIM); all three variables decrease with increment of dopant dosage, and increase with dopant concentration while keeping dosage constant. Since a smaller AWN, a larger DGSL, and a faster VIM always characterize a more robust ITD, one should make tradeoff among them by adjusting the dopant profiles in ablators.A Gaussian spectrum (GS) was used to imitate the Au M-band flux [Y. S. Li et al., PoP 18, 022701(2011)], and the impact of GScenter on implosion characteristics of Rev. 5 ITD was studied while moving the GScenter towards higher energy, the ablatorpreheat got severe, AWN got larger, DGSL got larger, and VIM got faster.

  6. Chromium 51 em K2CrO4: reactions of dopant atoms in solid state

    International Nuclear Information System (INIS)

    Valim, J.B.; Nascimento, R.L.G. do; Collins, C.H.; Collins, K.E.

    1986-01-01

    The study of the chemistry of 'dopant' 51 Cr(III) atoms in crystalline Cr(VI) compounds began as a sub-field of Hot Atom Chemistry. We shall review the attempts to use 'dopant' chromium-51 atoms as surrogate chromium recoil atoms with the special property of having a low-energy, recoil-dam-age-free history. These dopant atoms have shown behaviors very similar to those of high energy recoil 51 Gr atoms, thus offering little hope of learning about special damage site structures and reactions by behavioral differences. Recent work has shown that at least some of the 'dopant' 51 Cr(III) is present as a second, non-chromate solid phase in 'doped crystal' experiments. Monodisperse 51 Cr(OH) 3 particles mixed with pure K 2 CrO 4 are very reactive. (Author) [pt

  7. Variation of thermophysical parameters of PCM CaCl2.6H2O with dopant from T-history data analysis

    Science.gov (United States)

    Sutjahja, I. M.; Silalahi, Alfriska O.; Sukmawati, Nissa; Kurnia, D.; Wonorahardjo, S.

    2018-03-01

    T-history is a powerful method for deriving the thermophysical parameters of a phase change material (PCM), which consists of solid and liquid specific heats as well as latent heat enthalpy. The performance of a PCM for thermal energy storage could be altered by chemical dopants added directly to the PCM in order to form a stable suspension. We described in this paper the role of chemical dopants in the variation of thermophysical parameters for CaCl2 · 6H2O inorganic PCM with 1 wt% and 2 wt% dopant concentration and BaSO4 (1 wt%) as a nucleator using the T-history method. The dopant consists graphite and CuO nanoparticles. The data analysis follows the original method proposed by (Zhang et al 1999 Meas. Sci. Technol. 10 201–205) and its modification by (Hong et al 2004 Int. J. Refrig. 27 360–366). In addition, the enthalpy-temperature curve is obtained by adopting a method proposed by (Marín et al 2003 Meas. Sci. Technol. 14 184–189). We found that the solid specific heat tends to increase non-linearly with increased dopant concentration for all dopants. The increased liquid specific heat, however, indicates the optimum value for 1 wt% graphite dopant. In contrast, the CuO dopant shows a smaller increase in dopant concentration. The specific heat data are analyzed based on the interacting mesolayer model for a nanofluid. The heat of fusion show strong variation with dopant type, in agreement with other experimental data for various PCMs and dopant particles.

  8. Theory of space charge limited currents in films and nanowires with dopants

    Science.gov (United States)

    Zhang, Xiaoguang; Pantelides, Sokrates

    2015-03-01

    We show that proper description of the space charge limited currents (SCLC) in a homogeneous bulk material must account fully for the effect of the dopants and the interplay between dopants and traps. The sharp rise in the current at the trap-filled-limit (TFL) is partially mitigated by the dopant energy levels and the Frenkel effect, namely the lowering of the ionization energy by the electric field, which is screened by the free carriers. In nanowires, lack of effective screening causes the trap occupation at small biases to reach a high level comparable to the TFL in bulk. This explains the high current density in SCLCs observed in nanowires. This work is supported by the LDRD program at ORNL. Portion of this research was conducted at the Center for Nanophase Materials Sciences, which is a DOE Office of Science User Facility.

  9. Genome-wide association for sensitivity to chronic oxidative stress in Drosophila melanogaster.

    Directory of Open Access Journals (Sweden)

    Katherine W Jordan

    Full Text Available Reactive oxygen species (ROS are a common byproduct of mitochondrial energy metabolism, and can also be induced by exogenous sources, including UV light, radiation, and environmental toxins. ROS generation is essential for maintaining homeostasis by triggering cellular signaling pathways and host defense mechanisms. However, an imbalance of ROS induces oxidative stress and cellular death and is associated with human disease, including age-related locomotor impairment. To identify genes affecting sensitivity and resistance to ROS-induced locomotor decline, we assessed locomotion of aged flies of the sequenced, wild-derived lines from the Drosophila melanogaster Genetics Reference Panel on standard medium and following chronic exposure to medium supplemented with 3 mM menadione sodium bisulfite (MSB. We found substantial genetic variation in sensitivity to oxidative stress with respect to locomotor phenotypes. We performed genome-wide association analyses to identify candidate genes associated with variation in sensitivity to ROS-induced decline in locomotor performance, and confirmed the effects for 13 of 16 mutations tested in these candidate genes. Candidate genes associated with variation in sensitivity to MSB-induced oxidative stress form networks of genes involved in neural development, immunity, and signal transduction. Many of these genes have human orthologs, highlighting the utility of genome-wide association in Drosophila for studying complex human disease.

  10. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M.M.; Krivolapchuk, V.V.; Petrov, V.N.; Rodin, S.N.; Cherenkov, A.V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. The sensitizing effect of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, the emission is observed in visible and infrared ranges of the photoluminescence spectrum [ru

  11. Microwave modulation characteristics of twisted liquid crystals with chiral dopant

    Directory of Open Access Journals (Sweden)

    Rui Yuan

    2017-01-01

    Full Text Available Adding a chiral dopant in twisted nematic (TN liquid crystal cell can stabilize the orientation of liquid crystal molecules, particularly in high TN (HTN or super TN (STN liquid crystal cells. The difference in pitches in liquid crystal is induced by the chiral dopant, and these different pitches affect the orientation of liquid crystal director under an external applied voltage and influence the characteristics of microwave modulation. To illustrate this point, the microwave phase shift per unit length (MPSL versus voltage is calculated on the basis of the elastic theory of liquid crystal and the finite-difference iterative method. Enhancing the pitch induced by the chiral dopant in liquid crystal increases the MPSLs, but the stability of the twisted structures is decreased. Thus, appropriate pitches of 100d, 4d, and 2d can be applied in TN, HTN, and STN cells with cell gap d to enhance the characteristics of microwave modulation and stabilize the structures in twisted cell. This method can improve the characteristics of liquid crystal microwave modulators such that the operating voltage and the size of such phase shifters can be decreased.

  12. Profiling N-Type Dopants in Silicon

    Czech Academy of Sciences Publication Activity Database

    Hovorka, Miloš; Mika, Filip; Mikulík, P.; Frank, Luděk

    2010-01-01

    Roč. 51, č. 2 (2010), s. 237-242 ISSN 1345-9678 R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803 Institutional research plan: CEZ:AV0Z20650511 Keywords : silicon * dopant contrast * photoemission electron microscopy * scanning electron microscopy Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.779, year: 2010 http://www.jim.or.jp/journal/e/51/02/237.html

  13. Electrosprayed Metal Oxide Semiconductor Films for Sensitive and Selective Detection of Hydrogen Sulfide

    Directory of Open Access Journals (Sweden)

    Maryam Siadat

    2009-11-01

    Full Text Available Semiconductor metal oxide films of copper-doped tin oxide (Cu-SnO2, tungsten oxide (WO3 and indium oxide (In2O3 were deposited on a platinum coated alumina substrate employing the electrostatic spray deposition technique (ESD. The morphology studied with scanning electron microscopy (SEM and atomic force microscopy (AFM shows porous homogeneous films comprising uniformly distributed aggregates of nano particles. The X-ray diffraction technique (XRD proves the formation of crystalline phases with no impurities. Besides, the Raman cartographies provided information about the structural homogeneity. Some of the films are highly sensitive to low concentrations of H2S (10 ppm at low operating temperatures (100 and 200 °C and the best response in terms of Rair/Rgas is given by Cu-SnO2 films (2500 followed by WO3 (1200 and In2O3 (75. Moreover, all the films exhibit no cross-sensitivity to other reducing (SO2 or oxidizing (NO2 gases.

  14. Addition of photosensitive dopants to the D0 liquid argon calorimeter

    International Nuclear Information System (INIS)

    Amos, N.A.; Anderson, D.F.

    1992-10-01

    The addition of photosensitive dopants to liquid argon greatly enhances the signal from heavily ionizing particles. Since binding energy losses we correlated with the heavily ionizing component in hadronic showers, the addition of photosensitive dopants has been suggested as a mechanism to tune the e/π ratio in liquid argon calorimeters. A measurement was performed at the FNAL test beam, adding 4 ppM tetramethylgermanium to the Dφ uranium-liquid argon calorimeter. An increase in response for electromagnetic and hadronic showers was observed, with no net change in the e/π ratio

  15. Defect evolution and dopant activation in laser annealed Si and Ge

    DEFF Research Database (Denmark)

    Cristiano, F.; Shayesteh, M.; Duffy, R.

    2016-01-01

    Defect evolution and dopant activation are intimately related to the use of ion implantation and annealing, traditionally used to dope semiconductors during device fabrication. Ultra-fast laser thermal annealing (LTA) is one of the most promising solutions for the achievement of abrupt and highly...... doped junctions. In this paper, we report some recent investigations focused on this annealing method, with particular emphasis on the investigation of the formation and evolution of implant/anneal induced defects and their impact on dopant activation. In the case of laser annealed Silicon, we show...

  16. Nursing students' understanding of factors influencing ethical sensitivity: A qualitative study.

    Science.gov (United States)

    Borhani, Fariba; Abbaszadeh, Abbas; Mohsenpour, Mohaddeseh

    2013-07-01

    Ethical sensitivity is considered as a component of professional competency of nurses. Its effects on improvement of nurses' ethical performance and the therapeutic relationship between nurses and patients have been reported. However, very limited studies have evaluated ethical sensitivity. Since no previous Iranian research has been conducted in this regard, the present study aimed to review nursing students' understanding of effective factors on ethical sensitivity. This qualitative study was performed in Kerman, Iran, during 2009. It used semi-structured individual interviews with eight MSc nursing students to assess their viewpoints. It also included two focus groups. Purposive sampling was continued until data saturation. Data were analyzed using manifest content analysis. The students' understanding of factors influencing ethical sensitivity were summarized in five main themes including individual and spiritual characteristics, education, mutual understanding, internal and external controls, and experience of an immoral act. The findings of this study create a unique framework for sensitization of nurses in professional performance. The application of these factors in human resource management is reinforcement of positive aspects and decrease in negative aspects, in education can use for educational objectives setting, and in research can designing studies based on this framework and making related tools. It is noteworthy that presented classification was influenced by students themselves and mentioned to a kind of learning activity by them.

  17. Nucleophilic Aromatic Substitution Between Halogenated Benzene Dopants and Nucleophiles in Atmospheric Pressure Photoionization.

    Science.gov (United States)

    Kauppila, Tiina J; Haack, Alexander; Kroll, Kai; Kersten, Hendrik; Benter, Thorsten

    2016-03-01

    In a preceding work with dopant assisted-atmospheric pressure photoionization (DA-APPI), an abundant ion at [M + 77](+) was observed in the spectra of pyridine and quinoline with chlorobenzene dopant. This contribution aims to reveal the identity and route of formation of this species, and to systematically investigate structurally related analytes and dopants. Compounds containing N-, O-, and S-lone pairs were investigated with APPI in the presence of fluoro-, chloro-, bromo-, and iodobenzene dopants. Computational calculations on a density functional theory (DFT) level were carried out to study the reaction mechanism for pyridine and the different halobenzenes. The experimental and computational results indicated that the [M + 77](+) ion was formed by nucleophilic aromatic ipso-substitution between the halobenzene radical cation and nucleophilic analytes. The reaction was most efficient for N-heteroaromatic compounds, and it was weakened by sterical effects and enhanced by resonance stabilization. The reaction was most efficient with chloro-, bromo-, and iodobenzenes, whereas with fluorobenzene the reaction was scarcely observed. The calculated Gibbs free energies for the reaction between pyridine and the halobenzenes were shown to increase in the order I < Br < Cl < F. The reaction was found endergonic for fluorobenzene due to the strong C-F bonding, and exergonic for the other halobenzenes. For fluoro- and chlorobenzenes the reaction was shown to proceed through an intermediate state corresponding to [M + dopant](+), which was highly stable for fluorobenzene. For the bulkier bromine and iodine, this intermediate did not exist, but the halogens were shown to detach already during the approach by the nucleophile.

  18. Dye-sensitized solar cell architecture based on indium-tin oxide nanowires coated with titanium dioxide

    International Nuclear Information System (INIS)

    Joanni, Ednan; Savu, Raluca; Sousa Goes, Marcio de; Bueno, Paulo Roberto; Nei de Freitas, Jilian; Nogueira, Ana Flavia; Longo, Elson; Varela, Jose Arana

    2007-01-01

    A new architecture for dye-sensitized solar cells is employed, based on a nanostructured transparent conducting oxide protruding from the substrate, covered with a separate active oxide layer. The objective is to decrease electron-hole recombination. The concept was tested by growing branched indium-tin oxide nanowires on glass using pulsed laser deposition followed by deposition of a sputtered titanium dioxide layer covering the wires. The separation of charge generation and charge transport functions opens many possibilities for dye-sensitized solar cell optimization

  19. Impact of carbon-fluorine doped titanium dioxide in the performance of an electrochemical sensing of dopamine and rosebengal sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Abinaya C

    2015-01-01

    Full Text Available The role of Fluorine and Carbon as dopants in the TiO2 based electrochemical sensor and DSSC were presented in this work. A series of Carbon nano-cones and disc doped TiO2 (TC, Fluorine doped TiO2 (FT and C & F co-doped TiO2 (CFT powdered samples were prepared via solid state synthesis. The CFT film showed excellent electrochemical sensitivity to the oxidation of dopamine in aqueous solution and could be employed as a dopamine sensor. The proposed sensor exhibited good linear response in the range of 10-820 μM with a detection limit of 3.6 μM under optimum conditions. The photovoltaic performances of Rose Bengal sensitized solar cells were assessed through I-V measurements. The CFT based DSSC shows a short-circuit current density and a power conversion efficiency (η of 0.908 mA/cm2 and 0.163% respectively, which is 35% and 38% greater than the performance of other PT based cells. The characterization studies such as UV-Visible spectroscopy, Photoluminescence, TEM and EPR spectroscopy were utilized for further investigation, which helps us to understand how fluorine and carbon play a part in dopamine sensing and solar energy conversion.

  20. Spin-lock MR enhances the detection sensitivity of superparamagnetic iron oxide particles

    NARCIS (Netherlands)

    Moonen, R.P.M.; van der Tol, P.; Hectors, S.J.C.G.; Starmans, L.W.E.; Nicolaij, K.; Strijkers, G.J.

    2015-01-01

    Purpose To evaluate spin-lock MR for detecting superparamagnetic iron oxides and compare the detection sensitivity of quantitative T1ρ with T2 imaging. Methods In vitro experiments were performed to investigate the influence of iron oxide particle size and composition on T1ρ. These comprise T1ρ and

  1. Spin-lock MR enhances the detection sensitivity of superparamagnetic iron oxide particles

    NARCIS (Netherlands)

    Moonen, Rik P. M.; van der Tol, Pieternel; Hectors, Stefanie J. C. G.; Starmans, Lucas W. E.; Nicolay, Klaas; Strijkers, Gustav J.

    2015-01-01

    To evaluate spin-lock MR for detecting superparamagnetic iron oxides and compare the detection sensitivity of quantitative T1ρ with T2 imaging. In vitro experiments were performed to investigate the influence of iron oxide particle size and composition on T1ρ . These comprise T1ρ and T2 measurements

  2. An extended five-stream model for diffusion of ion-implanted dopants in monocrystalline silicon

    International Nuclear Information System (INIS)

    Khina, B.B.

    2007-01-01

    Low-energy high-dose ion implantation of different dopants (P, Sb, As, B and others) into monocrystalline silicon with subsequent thermal annealing is used for the formation of ultra-shallow p-n junctions in modern VLSI circuit technology. During annealing, dopant activation and diffusion in silicon takes place. The experimentally observed phenomenon of transient enhanced diffusion (TED), which is typically ascribed to the interaction of diffusing species with non-equilibrium point defects accumulated in silicon due to ion damage, and formation of small clusters and extended defects, hinders further down scaling of p-n junctions in VLSI circuits. TED is currently a subject of extensive experimental and theoretical investigation in many binary and multicomponent systems. However, the state-of-the-art mathematical models of dopant diffusion, which are based on the so-called 'five-stream' approach, and modern TCAD software packages such as SUPREM-4 (by Silvaco Data Systems, Ltd.) that implement these models encounter severe difficulties in describing TED. Solving the intricate problem of TED suppression and development of novel regimes of ion implantation and rapid thermal annealing is impossible without elaboration of new mathematical models and computer simulation of this complex phenomenon. In this work, an extended five-stream model for diffusion in silicon is developed which takes into account all possible charge states of point defects (vacancies and silicon self-interstitials) and diffusing pairs 'dopant atom-vacancy' and 'dopant atom-silicon self-interstitial'. The model includes the drift terms for differently charged point defects and pairs in the internal electric field and the kinetics of interaction between unlike 'species' (generation and annihilation of pairs and annihilation of point defects). Expressions for diffusion coefficients and numerous sink/source terms that appear in the non-linear, non-steady-state reaction-diffusion equations are derived

  3. Effect of additionally introduced Zn and Eu dopants on the photoluminescence spectra of Er-Doped GaN crystals

    International Nuclear Information System (INIS)

    Mezdrogina, M. M.; Krivolapchuk, V. V.; Petrov, V. N.; Rodin, S. N.; Cherenkov, A. V.

    2006-01-01

    It is shown that the effect of dopants on the photoluminescence spectrum depends on the conductivity type of the initial GaN crystals. Sensitization of emission is observed in wurtzite p-GaN crystals doped with Er. The same effect was previously observed in such crystals doped with Eu and Zn. In n-type GaN crystals sequentially doped with Eu, Zn, and Er, emission is observed in the visible (λ = 360-440 and 530-560 nm) and IR (λ = 1.54 μm) spectral regions

  4. Thermal oxidation of III-V compounds

    International Nuclear Information System (INIS)

    Monteiro, O.R.; Evans, J.W.

    1988-01-01

    The thermal oxidation of two important III-V compound semiconductor materials, namely GaAs and InP, has been studied between 300 and 600 0 C. In-situ TEM, cross-sectional TEM (XTEM) and SIMS analyses were used to characterize the reaction products. The first technique allows us to access the reactions at the very moment they are occurring. XTEM provides a clearer picture of the distribution of phases in the oxidized samples. SIMS gives us information on the dopant redistribution after oxidation as well as enrichment of group V element at the oxide semiconductor interface. Based on those results, the reaction products were characterized and reaction mechanisms proposed

  5. Metal oxalate complexes as novel inorganic dopants: Studies on ...

    Indian Academy of Sciences (India)

    Unknown

    UV-visible and IR spectral features not only confirmed the polyaniline doping by complex anions but also substantiated ... MoS3 dopant. Although inorganic metal complexes bear- ... distilled water and then with methanol and acetone until.

  6. CaSO4:DY,Mn: A new and highly sensitive thermoluminescence phosphor for versatile dosimetry

    Science.gov (United States)

    Bahl, Shaila; Lochab, S. P.; Kumar, Pratik

    2016-02-01

    With the advent of newer techniques for dose reduction coupled with the development of more sensitive detectors, the radiation doses in radiological medical investigation are decreasing. Nevertheless, keeping the tenet in mind that all radiation doses could entail risk, there is a need to develop more sensitive dosimeters capable of measuring low doses. This paper gives the account of the development of a new and sensitive phosphor CaSO4:Dy,Mn and its characterization. The standard production procedure based on the recrystallization method was used to prepare CaSO4:Dy,Mn. The Thermoluminescence (TL) studies were carried out by exposing it with gamma radiation (Cs-137) from 10 μGy to 100 Gy. The theoretical studies to determine the number of peaks and kinetic parameters related to the TL glow peaks in CaSO4:Dy,Mn was performed using the Computerized Glow Curve Deconvolution (CGCD) method. Experiments were performed to determine optimum concentration of the dopants Dysprosium (Dy) and Mangnese (Mn) in the host CaSO4 so that maximum sensitivity of the phosphor may be achieved. The optimum dopant concentration turned out to be 0.1 mol%. As there were two dopants Dy and Mn their relative ratio were varied in steps of 0.025 keeping the concentration of total dopant (Dy and Mn) 0.1 mol% always. The maximum TL intensity was seen in the CaSO4:Dy(0.025),Mn(0.075) combination. The TL sensitivity of this phosphor was found to be about 2 and 1.8 times higher than that of popular phosphor CaSO4:Dy and LiF:Mg,Cu,P (TLD-700H) respectively. This new phosphor CaSO4:Dy,Mn showed fading of 11% which is similar to that of the standard phosphor CaSO4:Dy. The paper concludes that the new, highly sensitive TL phosphor CaSO4:Dy,Mn has shown higher sensitivity and hence the potential to replace commonly used CaSO4:Dy.

  7. Molybdenum Oxides - From Fundamentals to Functionality.

    Science.gov (United States)

    de Castro, Isabela Alves; Datta, Robi Shankar; Ou, Jian Zhen; Castellanos-Gomez, Andres; Sriram, Sharath; Daeneke, Torben; Kalantar-Zadeh, Kourosh

    2017-10-01

    The properties and applications of molybdenum oxides are reviewed in depth. Molybdenum is found in various oxide stoichiometries, which have been employed for different high-value research and commercial applications. The great chemical and physical characteristics of molybdenum oxides make them versatile and highly tunable for incorporation in optical, electronic, catalytic, bio, and energy systems. Variations in the oxidation states allow manipulation of the crystal structure, morphology, oxygen vacancies, and dopants, to control and engineer electronic states. Despite this overwhelming functionality and potential, a definitive resource on molybdenum oxide is still unavailable. The aim here is to provide such a resource, while presenting an insightful outlook into future prospective applications for molybdenum oxides. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Controlling energy transfer between multiple dopants within a single nanoparticle

    Science.gov (United States)

    DiMaio, Jeffrey R.; Sabatier, Clément; Kokuoz, Baris; Ballato, John

    2008-01-01

    Complex core-shell architectures are implemented within LaF3 nanoparticles to allow for a tailored degree of energy transfer (ET) between different rare earth dopants. By constraining specific dopants to individual shells, their relative distance to one another can be carefully controlled. Core-shell LaF3 nanoparticles doped with Tb3+ and Eu3+ and consisting of up to four layers were synthesized with an outer diameter of ≈10 nm. It is found that by varying the thicknesses of an undoped layer between a Tb3+-doped layer and a Eu3+-doped layer, the degree of ET can be engineered to allow for zero, partial, or total ET from a donor ion to an acceptor ion. More specifically, the ratio of the intensities of the 541-nm Tb3+ and 590 nm Eu3+ peaks was tailored from core-shell configuration that restricts ET is used. Beyond simply controlling ET, which can be limiting when designing materials for optical applications, this approach can be used to obtain truly engineered spectral features from nanoparticles and composites made from them. Further, it allows for a single excitation source to yield multiple discrete emissions from numerous lanthanide dopants that heretofore would have been quenched in a more conventional active optical material. PMID:18250307

  9. V{sub 2}O{sub 5}-ZrO{sub 2} catalysts for the oxidative dehydrogenation of propane - influence of the niobium oxide doping

    Energy Technology Data Exchange (ETDEWEB)

    Albrecht, S.; Hallmeier, K.H.; Wendt, G. [Leipzig Univ. (Germany). Fakultaet fuer Chemie und Mineralogie; Lippold, G. [Leipzig Univ. (Germany). Fakultaet fuer Physik und Geowissenschaften

    1998-12-31

    The oxidative dehydrogenation (ODH) of light alkanes is an alternative way for the production of olefins. A wide variety of catalytic systems has been investigated. Vanadium oxide based catalysts were described in the literature as effective catalysts for the ODH of propane. The catalytic activity and selectivity depend on the kind of support material, the kind of dopants and the formation of complex metal oxide phases. In recent papers it was claimed that both orthovanadate and/or pyrovanadate species are selective for the ODH of propane. Niobia based materials were investigated as catalysts for acidic and selective oxidation type reactions. In the ODH of propane niobia exhibited a high selectivity to propene but the conversion of propane was low. V{sub 2}O{sub 5}-Nb{sub 2}O{sub 5} catalysts proved to be catalytically active and selective and showed no formation of oxygenates. In the present study the influence of the niobia dopant of the catalytic properties of V{sub 2}O{sub 5}-ZrO{sub 2} catalysts in the ODH of propane was examined. The structural and textural properties of the catalysts were investigated using several methods. (orig.)

  10. Nursing students’ understanding of factors influencing ethical sensitivity: A qualitative study

    OpenAIRE

    Borhani, Fariba; Abbaszadeh, Abbas; Mohsenpour, Mohaddeseh

    2013-01-01

    Background: Ethical sensitivity is considered as a component of professional competency of nurses. Its effects on improvement of nurses’ ethical performance and the therapeutic relationship between nurses and patients have been reported. However, very limited studies have evaluated ethical sensitivity. Since no previous Iranian research has been conducted in this regard, the present study aimed to review nursing students’ understanding of effective factors on ethical sensitivity. Materials an...

  11. Dynamics of δ-dopant redistribution during heterostructure growth

    Science.gov (United States)

    Pankratov, E. L.

    2007-06-01

    It has recently been shown that growth of a multilayer structure with one or more delta-layers at high temperature leads to spreading and asymmetrization of the dopant distribution [see, for example, E.F.J. Schubert, Vac. Sci. Technol. A. 8, 2980 (1990), A.M. Nazmul, S. Sugahara, M. Tanaka, J. Crystal Growth 251, 303 (2003); R.C. Newman, M.J. Ashwin, M.R. Fahy, L. Hart, S.N. Holmes, C. Roberts, X. Zhang, Phys. Rev. B 54, 8769 (1996); E.F. Schubert, J.M. Kuo, R.F. Kopf, H.S. Luftman, L.C. Hopkins, N.J. Sauer, J. Appl. Phys. 67, 1969 (1990); P.M. Zagwijn, J.F. van der Veen, E. Vlieg, A.H. Reader, D.J. Gravesteijn, J. Appl. Phys. 78, 4933 (1995); W.S. Hobson, S.J. Pearton, E.F. Schubert, G. Cabaniss, Appl. Phys. Lett. 55, 1546 (1989); Delta Doping of Semiconductors, edited by E.F. Schubert (Cambridge University Press, Cambridge, 1996); Yu.N. Drozdov, N.B. Baidus', B.N. Zvonkov, M.N. Drozdov, O.I. Khrykin, V.I. Shashkin, Semiconductors 37, 194 (2003); E. Skuras, A.R. Long, B. Vogele, M.C. Holland, C.R. Stanley, E.A. Johnson, M. van der Burgt, H. Yaguchi, J. Singleton, Phys. Rev. B 59, 10712 (1999); G. Li, C. Jagadish, Solid-State Electronics 41, 1207 (1997)]. In this work analytical and numerical analysis of dopant dynamics in a delta-doped area of a multilayer structure has been accomplished using Fick's second law. Some reasons for asymmetrization of a delta-dopant distribution are illustrated. The spreading of a delta-layer has been estimated using example materials of a multilayer structure, a delta-layer and an overlayer.

  12. Conductive transition metal oxide nanostructured electrochromic material and optical switching devices constructed thereof

    Science.gov (United States)

    Mattox, Tracy M.; Koo, Bonil; Garcia, Guillermo; Milliron, Delia J.; Trizio, Luca De; Dahlman, Clayton

    2017-10-10

    An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant, a solid state electrolyte, and a counter electrode. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) spectrum and visible spectrum radiation as a function of an applied voltage to the device.

  13. Electrochromic device containing metal oxide nanoparticles and ultraviolet blocking material

    Science.gov (United States)

    Garcia, Guillermo; Koo, Bonil; Gregoratto, Ivano; Basu, Sourav; Rosen, Evelyn; Holt, Jason; Thomsen, Scott

    2017-10-17

    An electrochromic device includes a nanostructured transition metal oxide bronze layer that includes one or more transition metal oxide and one or more dopant. The electrochromic device also includes nanoparticles containing one or more transparent conducting oxide (TCO), a solid state electrolyte, a counter electrode, and at least one protective layer to prevent degradation of the one or more nanostructured transition metal oxide bronze. The nanostructured transition metal oxide bronze selectively modulates transmittance of near-infrared (NIR) and visible radiation as a function of an applied voltage to the device.

  14. Unique proteomic signature for radiation sensitive patients; a comparative study between normo-sensitive and radiation sensitive breast cancer patients

    Energy Technology Data Exchange (ETDEWEB)

    Skiöld, Sara [Center for Radiation Protection Research, Department of Molecular Biosciences, The Wernner-Gren Institute, Stockholm University, Stockholm (Sweden); Azimzadeh, Omid [Institute of Radiation Biology, German Research Center for Environmental Health, Helmholtz Zentrum München (Germany); Merl-Pham, Juliane [Research Unit Protein Science, German Research Center for Environmental Health, Helmholtz Zentrum München, Neuherberg (Germany); Naslund, Ingemar; Wersall, Peter; Lidbrink, Elisabet [Division of Radiotherapy, Radiumhemmet, Karolinska University Hospital, Stockholm (Sweden); Tapio, Soile [Institute of Radiation Biology, German Research Center for Environmental Health, Helmholtz Zentrum München (Germany); Harms-Ringdahl, Mats [Center for Radiation Protection Research, Department of Molecular Biosciences, The Wernner-Gren Institute, Stockholm University, Stockholm (Sweden); Haghdoost, Siamak, E-mail: Siamak.Haghdoost@su.se [Center for Radiation Protection Research, Department of Molecular Biosciences, The Wernner-Gren Institute, Stockholm University, Stockholm (Sweden)

    2015-06-15

    Highlights: • The unique protein expression profiles were found that separate radiosensitive from normal sensitive breast cancer patients. • The oxidative stress response, coagulation properties and acute phase response suggested to be the hallmarks of radiation sensitivity. - Abstract: Radiation therapy is a cornerstone of modern cancer treatment. Understanding the mechanisms behind normal tissue sensitivity is essential in order to minimize adverse side effects and yet to prevent local cancer reoccurrence. The aim of this study was to identify biomarkers of radiation sensitivity to enable personalized cancer treatment. To investigate the mechanisms behind radiation sensitivity a pilot study was made where eight radiation-sensitive and nine normo-sensitive patients were selected from a cohort of 2914 breast cancer patients, based on acute tissue reactions after radiation therapy. Whole blood was sampled and irradiated in vitro with 0, 1, or 150 mGy followed by 3 h incubation at 37 °C. The leukocytes of the two groups were isolated, pooled and protein expression profiles were investigated using isotope-coded protein labeling method (ICPL). First, leukocytes from the in vitro irradiated whole blood from normo-sensitive and extremely sensitive patients were compared to the non-irradiated controls. To validate this first study a second ICPL analysis comparing only the non-irradiated samples was conducted. Both approaches showed unique proteomic signatures separating the two groups at the basal level and after doses of 1 and 150 mGy. Pathway analyses of both proteomic approaches suggest that oxidative stress response, coagulation properties and acute phase response are hallmarks of radiation sensitivity supporting our previous study on oxidative stress response. This investigation provides unique characteristics of radiation sensitivity essential for individualized radiation therapy.

  15. Unique proteomic signature for radiation sensitive patients; a comparative study between normo-sensitive and radiation sensitive breast cancer patients

    International Nuclear Information System (INIS)

    Skiöld, Sara; Azimzadeh, Omid; Merl-Pham, Juliane; Naslund, Ingemar; Wersall, Peter; Lidbrink, Elisabet; Tapio, Soile; Harms-Ringdahl, Mats; Haghdoost, Siamak

    2015-01-01

    Highlights: • The unique protein expression profiles were found that separate radiosensitive from normal sensitive breast cancer patients. • The oxidative stress response, coagulation properties and acute phase response suggested to be the hallmarks of radiation sensitivity. - Abstract: Radiation therapy is a cornerstone of modern cancer treatment. Understanding the mechanisms behind normal tissue sensitivity is essential in order to minimize adverse side effects and yet to prevent local cancer reoccurrence. The aim of this study was to identify biomarkers of radiation sensitivity to enable personalized cancer treatment. To investigate the mechanisms behind radiation sensitivity a pilot study was made where eight radiation-sensitive and nine normo-sensitive patients were selected from a cohort of 2914 breast cancer patients, based on acute tissue reactions after radiation therapy. Whole blood was sampled and irradiated in vitro with 0, 1, or 150 mGy followed by 3 h incubation at 37 °C. The leukocytes of the two groups were isolated, pooled and protein expression profiles were investigated using isotope-coded protein labeling method (ICPL). First, leukocytes from the in vitro irradiated whole blood from normo-sensitive and extremely sensitive patients were compared to the non-irradiated controls. To validate this first study a second ICPL analysis comparing only the non-irradiated samples was conducted. Both approaches showed unique proteomic signatures separating the two groups at the basal level and after doses of 1 and 150 mGy. Pathway analyses of both proteomic approaches suggest that oxidative stress response, coagulation properties and acute phase response are hallmarks of radiation sensitivity supporting our previous study on oxidative stress response. This investigation provides unique characteristics of radiation sensitivity essential for individualized radiation therapy

  16. Influence of pentavalent dopant addition to polarization and bioactivity of hydroxyapatite

    International Nuclear Information System (INIS)

    Dhal, Jharana; Bose, Susmita; Bandyopadhyay, Amit

    2013-01-01

    Influence of pentavalent tantalum doping in bulk hydroxyapatite (HAp) ceramics has been investigated for polarizability and bioactivity. Phase analysis from X-ray diffraction measurement indicates that increasing dopant concentration decreased the amount of HAp phase and increased β-TCP and/or α-TCP phases during sintering at 1250 °C in a muffle furnace. Results from thermally stimulated depolarization current (TSDC) measurements showed that doping hindered charge storage ability in HAp ceramics, and doped samples stored fewer charge compared to pure HAp. However, doping enhanced wettability of HAp samples, which was improved further due to polarization. In vitro human osteoblast cell–material interaction study revealed an increase in bioactivity due to dopant addition and polarization compared to pure HAp. This increase in bioactivity was attributed to the increase in wettability due to surface charge and dopant addition. - Highlights: • Tantalum doping makes HAp unstable during sintering at 1250 °C and forms TCP. • Tantalum doping reduces charge storage ability of HAp ceramics. • Even with lower charge storage ability tantalum doping improves wettability. • Tantalum doping enhances bioactivity of calcium phosphate based sintered compacts

  17. Real space pseudopotential calculations for size trends in Ga- and Al-doped zinc oxide nanocrystals with wurtzite and zincblende structures

    Energy Technology Data Exchange (ETDEWEB)

    Bobbitt, N. Scott; Kim, Minjung [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Sai, Na [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States); Marom, Noa [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana, 70118 (United States); Chelikowsky, James R. [Center for Computational Materials, Institute for Computational Engineering and Sciences, Departments of Physics and Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2014-09-07

    Zinc oxide is often used as a popular inexpensive transparent conducting oxide. Here, we employ density functional theory and local density approximation to examine the effects of quantum confinement in doped nanocrystals of this material. Specifically, we examine the addition of Ga and Al dopants to ZnO nanocrystals on the order of 1.0 nm. We find that the inclusion of these dopants is energetically less favorable in smaller particles and that the electron binding energy, which is associated with the dopant activation, decreases with the nanocrystal size. We find that the introduction of impurities does not alter significantly the Kohn-Sham eigenspectrum for small nanocrystals of ZnO. The added electron occupies the lowest existing state, i.e., no new bound state is introduced in the gap. We verify this assertion with hybrid functional calculations.

  18. Real space pseudopotential calculations for size trends in Ga- and Al-doped zinc oxide nanocrystals with wurtzite and zincblende structures

    International Nuclear Information System (INIS)

    Bobbitt, N. Scott; Kim, Minjung; Sai, Na; Marom, Noa; Chelikowsky, James R.

    2014-01-01

    Zinc oxide is often used as a popular inexpensive transparent conducting oxide. Here, we employ density functional theory and local density approximation to examine the effects of quantum confinement in doped nanocrystals of this material. Specifically, we examine the addition of Ga and Al dopants to ZnO nanocrystals on the order of 1.0 nm. We find that the inclusion of these dopants is energetically less favorable in smaller particles and that the electron binding energy, which is associated with the dopant activation, decreases with the nanocrystal size. We find that the introduction of impurities does not alter significantly the Kohn-Sham eigenspectrum for small nanocrystals of ZnO. The added electron occupies the lowest existing state, i.e., no new bound state is introduced in the gap. We verify this assertion with hybrid functional calculations

  19. Dopant profiling based on scanning electron and helium ion microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Chee, Augustus K.W., E-mail: kwac2@cam.ac.uk [Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA (United Kingdom); Boden, Stuart A. [University of Southampton, Electronics and Computer Science, Highfield, Southampton SO17 1BJ (United Kingdom)

    2016-02-15

    In this paper, we evaluate and compare doping contrast generated inside the scanning electron microscope (SEM) and scanning helium ion microscope (SHIM). Specialised energy-filtering techniques are often required to produce strong doping contrast to map donor distributions using the secondary electron (SE) signal in the SEM. However, strong doping contrast can be obtained from n-type regions in the SHIM, even without energy-filtering. This SHIM technique is more sensitive than the SEM to donor density changes above its sensitivity threshold, i.e. of the order of 10{sup 16} or 10{sup 17} donors cm{sup −3} respectively on specimens with or without a p–n junction; its sensitivity limit is well above 2×10{sup 17} acceptors cm{sup −3} on specimens with or without a p–n junction. Good correlation is found between the widths and slopes of experimentally measured doping contrast profiles of thin p-layers and the calculated widths and slopes of the potential energy distributions across these layers, at a depth of 1 to 3 nm and 5 to 10 nm below the surface in the SHIM and the SEM respectively. This is consistent with the mean escape depth of SEs in silicon being about 1.8 nm and 7 nm in the SHIM and SEM respectively, and we conclude that short escape depth, low energy SE signals are most suitable for donor profiling. - Highlights: • Strong doping contrast from n-type regions in the SHIM without energy-filtering. • Sensitivity limits are established of the SHIM and SEM techniques. • We discuss the impact of SHIM imaging conditions on quantitative dopant profiling. • Doping contrast stems from different surface layer thicknesses in the SHIM and SEM.

  20. A helical naphthopyran dopant for photoresponsive cholesteric liquid crystals

    OpenAIRE

    Kim, Yuna; Frigoli, Michel; Vanthuyne, Nicolas; Tamaoki, Nobuyuki

    2017-01-01

    The first photoresponsive cholesteric liquid crystal comprising a photoisomerizable helical naphthopyran derivative dopant and a nematic liquid crystal is reported. An unprecedented helical twisting power switching ratio of over 90% allowed us to demonstrate multi-cycle rotational motion of micro-objects by UV light irradiation.

  1. Quantitative Genome-Wide Analysis of Yeast Deletion Strain Sensitivities to Oxidative and Chemical Stress

    Directory of Open Access Journals (Sweden)

    Stanley Fields

    2006-03-01

    Full Text Available Understanding the actions of drugs and toxins in a cell is of critical importance to medicine, yet many of the molecular events involved in chemical resistance are relatively uncharacterized. In order to identify the cellular processes and pathways targeted by chemicals, we took advantage of the haploid Saccharomyces cerevisiae deletion strains (Winzeler et al., 1999. Although ~4800 of the strains are viable, the loss of a gene in a pathway affected by a drug can lead to a synthetic lethal effect in which the combination of a deletion and a normally sublethal dose of a chemical results in loss of viability. WE carried out genome-wide screens to determine quantitative sensitivities of the deletion set to four chemicals: hydrogen peroxide, menadione, ibuprofen and mefloquine. Hydrogen peroxide and menadione induce oxidative stress in the cell, whereas ibuprofen and mefloquine are toxic to yeast by unknown mechanisms. Here we report the sensitivities of 659 deletion strains that are sensitive to one or more of these four compounds, including 163 multichemicalsensitive strains, 394 strains specific to hydrogen peroxide and/or menadione, 47 specific to ibuprofen and 55 specific to mefloquine.We correlate these results with data from other large-scale studies to yield novel insights into cellular function.

  2. Effect of anionic dopants on thickness, morphology and electrical properties of polypyrrole ultra-thin films prepared by in situ chemical polymerization

    Energy Technology Data Exchange (ETDEWEB)

    Mahmoodian, Mehrnoosh [Dep. of Polymer Engineering, Nanostructured Materials Research Center, Sahand University of Technology, Tabriz 51335-1996 (Iran, Islamic Republic of); Pourabbas, Behzad, E-mail: pourabas@sut.ac.ir [Dep. of Polymer Engineering, Nanostructured Materials Research Center, Sahand University of Technology, Tabriz 51335-1996 (Iran, Islamic Republic of); Mohajerzadeh, Shams [Nano-Electronics and Thin Film Lab, School of Electrical and Computer Engineering, University of Tehran, P.O. Box 14395/515, Tehran (Iran, Islamic Republic of)

    2015-05-29

    The effect of different dopant anions on deposition and characteristics of polypyrrole (PPy) thin film has been studied in this work. Ultra-thin films of conducting PPy were deposited on insulating surfaces of glass and oxidized silicon wafer by in situ chemical polymerization in the presence of different anionic dopants including sodium dodecylbenzenesulfonate, sodium dodecyl sulfate, α-naphthalene sulfonic acid, anthraquinone-2-sulfonic acid sodium salt monohydrate/5-sulfosalicylic acid dehydrate, and camphor sulfonic acid. Hydrophilic/hydrophobic properties and morphology of the self-assembled monolayer of N-(3-trimethoxysilylpropyl)pyrrole, the surface modifying agent in this work, and PPy thin films were characterized before and after deposition by contact angle measurements, field emission scanning electron microscopy, and atomic force microscopy. Chemical structure, thickness, and conductivity of the thin films were also studied by attenuated total reflectance Fourier transform infrared spectrometer, ellipsometry, and four-point probe measurements. The results showed deposition of thin films of conducting PPy with comparable thickness in the range of 6-31 nm and different morphologies, uniformity, and smoothness with average roughness in the range of 0.3-6 nm and relatively high range of conductivity on the modified surfaces. - Highlights: • Conducting thin films of polypyrrole were deposited on glass and SiO{sub 2} substrates. • Surface modification using pyrrole-silane was employed prior to polymerization. • Films as thin as ≈ 7 nm were deposited using different surfactant/counter ions. • Chemistry of the counter ion affects thickness, conductivity and morphology. • Lower thickness/higher conductivity were obtained by structurally flexible dopants.

  3. Sensitization of Nanocrystalline Metal Oxides with a Phosphonate-Functionalized Perylene Diimide for Photoelectrochemical Water Oxidation with a CoOx Catalyst.

    Science.gov (United States)

    Kirner, Joel T; Finke, Richard G

    2017-08-23

    A planar organic thin film composed of a perylene diimide dye (N,N'-bis(phosphonomethyl)-3,4,9,10-perylenediimide, PMPDI) with photoelectrochemically deposited cobalt oxide (CoO x ) catalyst was previously shown to photoelectrochemically oxidize water (DOI: 10.1021/am405598w). Herein, the same PMPDI dye is studied for the sensitization of different nanostructured metal oxide (nano-MO x ) films in a dye-sensitized photoelectrochemical cell architecture. Dye adsorption kinetics and saturation decreases in the order TiO 2 > SnO 2 ≫ WO 3 . Despite highest initial dye loading on TiO 2 films, photocurrent with hydroquinone (H 2 Q) sacrificial reductant in pH 7 aqueous solution is much higher on SnO 2 films, likely due to a higher driving force for charge injection into the more positive conduction band energy of SnO 2 . Dyeing conditions and SnO 2 film thickness were subsequently optimized to achieve light-harvesting efficiency >99% at the λ max of the dye, and absorbed photon-to-current efficiency of 13% with H 2 Q, a 2-fold improvement over the previous thin-film architecture. A CoO x water-oxidation catalyst was photoelectrochemically deposited, allowing for photoelectrochemical water oxidation with a faradaic efficiency of 31 ± 7%, thus demonstrating the second example of a water-oxidizing, dye-sensitized photoelectrolysis cell composed entirely of earth-abundant materials. However, deposition of CoO x always results in lower photocurrent due to enhanced recombination between catalyst and photoinjected electrons in SnO 2 , as confirmed by open-circuit photovoltage measurements. Possible future studies to enhance photoanode performance are discussed, including alternative catalyst deposition strategies or structural derivatization of the perylene dye.

  4. Complete doping in solid-state by silica-supported perchloric acid as dopant solid acid: Synthesis and characterization of the novel chiral composite of poly [(±)-2-(sec-butyl) aniline

    Energy Technology Data Exchange (ETDEWEB)

    Farrokhzadeh, Abdolkarim; Modarresi-Alam, Ali Reza, E-mail: modaresi@chem.usb.ac.ir

    2016-05-15

    Poly [(±)-2-(sec-butyl) aniline]/silica-supported perchloric acid composites were synthesized by combination of poly[(±)-2-sec-butylaniline] base (PSBA) and the silica-supported perchloric acid (SSPA) as dopant solid acid in solid-state. The X-ray photoelectron spectroscopy (XPS) and CHNS results confirm nigraniline oxidation state and complete doping for composites (about 75%) and non-complete for the PSBA·HCl salt (about 49%). The conductivity of samples was (≈0.07 S/cm) in agreement with the percent of doping obtained of the XPS analysis. Also, contact resistance was determined by circular-TLM measurement. The morphology of samples by the scanning electron microscopy (SEM) and their coating were investigated by XPS, SEM-map and energy-dispersive X-ray spectroscopy (EDX). The key benefits of this work are the preparation of conductive chiral composite with the delocalized polaron structure under green chemistry and solid-state condition, the improvement of the processability by inclusion of the 2-sec-butyl group and the use of dopant solid acid (SSPA) as dopant. - Highlights: • The solid-state synthesis of the novel chiral composites of poly[(±)-2-(sec-butyl)aniline] (PSBA) and silica-supported perchloric acid (SSPA). • It takes 120 h for complete deprotonation of PSBA.HCl salt. • Use of SSPA as dopant solid acid for the first time to attain the complete doping of PSBA. • The coating of silica surface with PSBA.

  5. Sensitivity, selectivity and stability of tin oxide nanostructures on large area arrays of microhotplates

    Science.gov (United States)

    Panchapakesan, Balaji; Cavicchi, Richard; Semancik, Steve; DeVoe, Don L.

    2006-01-01

    In this paper, the sensitivity, stability and selectivity of nanoparticle engineered tin oxide (SnO2) are reported, for microhotplate chemical sensing applications. 16 Å of metals such as nickel, cobalt, iron, copper and silver were selectively evaporated onto each column of the microhotplate array. Following evaporation, the microhotplates were heated to 500 °C and SnO2 was deposited on top of the microhotplates using a self-aligned chemical vapour deposition process. Scanning electron microscopy characterization revealed control of SnO2 nanostructures in the range of 20-121 nm. Gas sensing in seven different hydrocarbons revealed that metal nanoparticles that helped in producing faster nucleation of SnO2 resulted in smaller grain size and higher sensitivity. Sensitivity as a function of concentration and grain size is addressed for tin oxide nanostructures. Smaller grain sizes resulted in higher sensitivity of tin oxide nanostructures. Temperature programmed sensing of the devices yielded shape differences in the response between air and methanol, illustrating selectivity. Spiderweb plots were used to monitor the materials programmed selectivity. The shape differences between different gases in spiderweb plots illustrate materials selectivity as a powerful mapping approach for monitoring selectivity in various gases. Continuous monitoring in 80 ppm methanol yielded stable sensor response for more than 200 h. This comprehensive study illustrates the use of a nanoparticle engineering approach for sensitive, selective and stable gas sensing applications.

  6. Charge Exchange Reaction in Dopant-Assisted Atmospheric Pressure Chemical Ionization and Atmospheric Pressure Photoionization.

    Science.gov (United States)

    Vaikkinen, Anu; Kauppila, Tiina J; Kostiainen, Risto

    2016-08-01

    The efficiencies of charge exchange reaction in dopant-assisted atmospheric pressure chemical ionization (DA-APCI) and dopant-assisted atmospheric pressure photoionization (DA-APPI) mass spectrometry (MS) were compared by flow injection analysis. Fourteen individual compounds and a commercial mixture of 16 polycyclic aromatic hydrocarbons were chosen as model analytes to cover a wide range of polarities, gas-phase ionization energies, and proton affinities. Chlorobenzene was used as the dopant, and methanol/water (80/20) as the solvent. In both techniques, analytes formed the same ions (radical cations, protonated molecules, and/or fragments). However, in DA-APCI, the relative efficiency of charge exchange versus proton transfer was lower than in DA-APPI. This is suggested to be because in DA-APCI both dopant and solvent clusters can be ionized, and the formed reagent ions can react with the analytes via competing charge exchange and proton transfer reactions. In DA-APPI, on the other hand, the main reagents are dopant-derived radical cations, which favor ionization of analytes via charge exchange. The efficiency of charge exchange in both DA-APPI and DA-APCI was shown to depend heavily on the solvent flow rate, with best efficiency seen at lowest flow rates studied (0.05 and 0.1 mL/min). Both DA-APCI and DA-APPI showed the radical cation of chlorobenzene at 0.05-0.1 mL/min flow rate, but at increasing flow rate, the abundance of chlorobenzene M(+.) decreased and reagent ion populations deriving from different gas-phase chemistry were recorded. The formation of these reagent ions explains the decreasing ionization efficiency and the differences in charge exchange between the techniques. Graphical Abstract ᅟ.

  7. Effect of Cu-Dopant on the Structural, Magnetic and Electrical Properties of ZnO

    Science.gov (United States)

    Aryanto, D.; Kurniawan, C.; Subhan, A.; Sudiro, T.; Sebayang, P.; Ginting, M.; Siregar, S. M. K.; Nasruddin, M. N.

    2017-05-01

    Zn1- x Cu x O (x = 0, 2, 3, and 4 at.%) was synthesized by using solid-state reaction technique. The ZnO and CuO powders were mixed and then milled by using high-speed shaker mill. The influence of Cu dopants on the structure, magnetic, and electrical properties was investigated by using XRD, VSM, and I-V and C-V measurements. The XRD analysis showed that the Zn1- x Cu x O had hexagonal wurtzite polycrystalline. The diffraction intensity decreased and the peak position shifted directly to a higher 2θ angle with increasing the dopant concentration. Furthermore, the lattice parameters decreased when the ZnO was doped with x = 0.04, which indicated that the crystal structure changed. The increase of Cu dopants was believed to affect the magnetic and electrical properties of ZnO.

  8. Technical report Development of a piezoelectric inkjet dopant delivery device for an atmospheric pressure photoionization source with liquid chromatography/mass spectrometry

    KAUST Repository

    Amad, Maan H.

    2013-01-01

    This paper describes a simple robust and integrated piezoelectric actuated printhead as a dopant delivery system for atmospheric pressure photoionization with liquid chromatography/mass spectrometry The newly designed dopant delivery system avoids problems associated with traditional liquid delivery systems such as solvent immiscibility backpressure and increased post-column dead volume issues The performance of the new device was tested and evaluated using chlorobenzene as a dopant with a test mixture consisting of 18 different polycyclic aromatic hydrocarbons (PAHs) The results show that the new system works robustly at low dopant consumption level (16 uL min-1) consuming only approximately 5% of the amount used by conventional sources The low dopant consumption has resulted in up to a 20-fold reduction in signal intensity of tested PAH molecules but has led to less presence of background cluster ions and dopant trace contaminant background ions in the source area Consequently all tested PAHs were detected with excellent signal-to-noise ratio with at least two-to ten-fold improvements in the limit of detection and quantification compared to those obtained with traditional dopant assistance using a post-column addition method © IM Publications LLP 2013.

  9. Microwave synthesis of nanostructured oxide sorbents doped with lanthanides

    Energy Technology Data Exchange (ETDEWEB)

    Mitrofanov, Andrey A., E-mail: mitrofanov-a@icloud.com; Silyavka, Elena S.; Shilovskikh, Vladimir V.; Kolonitckii, Petr D.; Sukhodolov, Nikolai G.; Selyutin, Artem A., E-mail: selutin@inbox.ru [Saint Petersburg State University, 7/9, Universitetskaya nab., St. Petersburg, 199034 (Russian Federation)

    2016-06-17

    A number of nanostructured mesoporous oxide systems based on aluminum oxide, doped with lanthanide ions have been obtained in this study. Structure and morphology of oxides obtained have been examined by X-ray diffraction analysis, thermogravimetric analysis, scanning electron microscopy. The surface area of the samples was determined by the BET method. The dependence of the adsorption of insulin on synthesized oxides from the concentration was investigated. The containing of insulin in solutions after adsorption was determined by the Bradford method. The isotherms of adsorption of insulin on resulting oxide sorbents were plotted, the dependence capacity of the sorption of insulin from the lanthanide dopant was determined.

  10. Influence of pre-deformation, sensitization and oxidation in high temperature water on corrosion resistance of AISI 304 stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Lv, Jinlong, E-mail: ljltsinghua@126.com [Beijing Key Laboratory of Fine Ceramics, Institute of Nuclear and New Energy Technology, Tsinghua University, Zhongguancun Street, Haidian District, Beijing 100084 (China); State Key Lab of New Ceramic and Fine Processing, Tsinghua University, Beijing 100084 (China); Liang, Tongxiang [Beijing Key Laboratory of Fine Ceramics, Institute of Nuclear and New Energy Technology, Tsinghua University, Zhongguancun Street, Haidian District, Beijing 100084 (China); State Key Lab of New Ceramic and Fine Processing, Tsinghua University, Beijing 100084 (China); Luo, Hongyun [Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beijing University of Aeronautics and Astronautics, Xueyuan Road 37, Beijing 100191 (China)

    2016-12-01

    Highlights: • The pre-strain accelerated desensitization and sensitization for austenitic stainless steels. • Low temperature sensitization (carbide precipitation) induced α′-martensite. • The sensitization level could affect directly corrosion resistance of the oxide film. - Abstract: The effects of pre-deformation on sensitization of AISI 304 stainless steel were investigated by the double loop electrochemical potentiokinetic reactivation test. The effects of pre-deformation and sensitization on high temperature oxidized film formed in high temperature water were analyzed by a XRD and SEM. The electrochemical impedance spectroscopy at room temperature was used to study corrosion resistance of oxidized film. The point defect density of oxidized film was calculated by Mott–Schottky plots. The results showed that the value of the degree of sensitization first decreased and then slight increased with the increasing of engineering strain. Moreover, low temperature promoted to form sensitization induced “secondary” α′-martensite. The sample with 20% engineering strain had higher impedance value than other samples. The result was supported by further Mott–Schottky experiments. Considering increased α′-martensite with the increasing of strain, the results of the impedance were more consistent with values of the degree of sensitization.

  11. Synthesis of vertically aligned metal oxide nanostructures

    KAUST Repository

    Roqan, Iman S.

    2016-03-03

    Metal oxide nanostructure and methods of making metal oxide nanostructures are provided. The metal oxide nanostructures can be 1 -dimensional nanostructures such as nanowires, nanofibers, or nanotubes. The metal oxide nanostructures can be doped or undoped metal oxides. The metal oxide nanostructures can be deposited onto a variety of substrates. The deposition can be performed without high pressures and without the need for seed catalysts on the substrate. The deposition can be performed by laser ablation of a target including a metal oxide and, optionally, a dopant. In some embodiments zinc oxide nanostructures are deposited onto a substrate by pulsed laser deposition of a zinc oxide target using an excimer laser emitting UV radiation. The zinc oxide nanostructure can be doped with a rare earth metal such as gadolinium. The metal oxide nanostructures can be used in many devices including light-emitting diodes and solar cells.

  12. A highly sensitive and durable electrical sensor for liquid ethanol using thermally-oxidized mesoporous silicon

    Science.gov (United States)

    Harraz, Farid A.; Ismail, Adel A.; Al-Sayari, S. A.; Al-Hajry, A.; Al-Assiri, M. S.

    2016-12-01

    A capacitive detection of liquid ethanol using reactive, thermally oxidized films constructed from electrochemically synthesized porous silicon (PSi) is demonstrated. The sensor elements are fabricated as meso-PSi (pore sizes hydrophobic PSi surface exhibited almost a half sensitivity of the thermal oxide sensor. The response to water is achieved only at the oxidized surface and found to be ∼one quarter of the ethanol sensitivity, dependent on parameters such as vapor pressure and surface tension. The capacitance response retains ∼92% of its initial value after continuous nine cyclic runs and the sensors presumably keep long-term stability after three weeks storage, demonstrating excellent durability and storage stability. The observed behavior in current system is likely explained by the interface interaction due to dipole moment effect. The results suggest that the current sensor structure and design can be easily made to produce notably higher sensitivities for reversible detection of various analytes.

  13. Fundamental Factors Impacting the Stability of Phosphonate-Derivatized Ruthenium Polypyridyl Sensitizers Adsorbed on Metal Oxide Surfaces.

    Science.gov (United States)

    Raber, McKenzie; Brady, Matthew David; Troian-Gautier, Ludovic; Dickenson, John; Marquard, Seth L; Hyde, Jacob; Lopez, Santiago; Meyer, Gerald J; Meyer, Thomas J; Harrison, Daniel P

    2018-06-08

    A series of 18 ruthenium(II) polypyridyl complexes were synthesized and evaluated under electrochemically oxidative conditions, which generates the Ru(III) oxidation state and mimics the harsh conditions experienced during the kinetically-limited regime that can occur in dye-sensitized solar cells (DSSCs) and dye-sensitized photoelectrosynthesis cells (DSPECs), to further develop fundamental insights into the factors governing molecular sensitizer surface stability in aqueous 0.1 M HClO4 (aq). Both desorption and oxidatively induced ligand substitution were observed on planar fluorine doped tin oxide, FTO, electrodes, with a dependence on the E1/2 Ru(III/II) redox potential dictating the comparative ratios of the processes. Complexes such as RuP4OMe (E1/2 = 0.91 vs Ag/AgCl) displayed virtually only desorption, while complexes such as RuPbpz (E1/2 > 1.62 V vs Ag/AgCl) displayed only chemical decomposition. Comparing isomers of 4,4'- and 5,5-disubstituted-2,2'-bipyridine ancillary polypyridyl ligands, a dramatic increase in the rate of desorption of the Ru(III) complexes was observed for the 5,5'-ligands. Nanoscopic indium doped tin oxide thin films, nanoITO, were also sensitized and analyzed with cyclic voltammetry, UV-Vis absorption spectroscopy, and XPS, allowing for further distinction of desorption versus ligand substitution processes. Desorption loss to bulk solution associated with the planar surface of FTO is essentially non-existent on nanoITO, where both desorption and ligand substitution are shut down with RuP4OMe. These results revealed that minimizing time spent in the oxidized form, incorporating electron donating groups, maximizing hydrophobicity, and minimizing molecular bulk near the adsorbed ligand are critical to optimizing the performance of ruthenium(II) polypyridyl complexes in dye-sensitized solar cell devices.

  14. Application of real space Kerker method in simulating gate-all-around nanowire transistors with realistic discrete dopants*

    International Nuclear Information System (INIS)

    Li Chang-Sheng; Ma Lei; Guo Jie-Rong

    2017-01-01

    We adopt a self-consistent real space Kerker method to prevent the divergence from charge sloshing in the simulating transistors with realistic discrete dopants in the source and drain regions. The method achieves efficient convergence by avoiding unrealistic long range charge sloshing but keeping effects from short range charge sloshing. Numerical results show that discrete dopants in the source and drain regions could have a bigger influence on the electrical variability than the usual continuous doping without considering charge sloshing. Few discrete dopants and the narrow geometry create a situation with short range Coulomb screening and oscillations of charge density in real space. The dopants induced quasi-localized defect modes in the source region experience short range oscillations in order to reach the drain end of the device. The charging of the defect modes and the oscillations of the charge density are identified by the simulation of the electron density. (paper)

  15. A structural study of ceramic oxides by X-ray absorption spectroscopy

    International Nuclear Information System (INIS)

    Akhtar, M.J.

    1995-01-01

    A detailed structural study of ceramic oxides is presented by employing X-ray Absorption Spectroscopy (XAS). In the present work X-ray Absorption Near Edge Structure (XANES) is used for the investigation of valence state of metal cations; whereas, Extended X-ray Absorption Fine Structure EXAFS) is employed for the determination for bond lengths, coordination numbers and nature of the elements present in the near neighbour shells surrounding the absorbing atom. These results show that local environment of dopant and host cations are different; and this variation in local structure depends on the nature and concentration of the dopant ions. (author)

  16. Application of dopant-free hole transport materials for perovskite solar cells

    International Nuclear Information System (INIS)

    Franckevincius, M.; Gulbinas, V.; Gratzel, M.; Zakeeruddin, S.; Pauerle, P.; Mishra, A.; Steck, C.

    2015-01-01

    In this work we present the synthesis, characterization and application of a series of additive and dopant free hole transport materials (HTM) for solid-state perovskite-based solar cells. Newly synthesized HTMs showed strong absorption in the visible spectral range and suitable HOMO-LUMO energy levels for the application for methylammonium lead(II) iodide (CH_3NH_3PbI_3) perovskite. Dopant-free perovskite solar cells have been fabricated using CH_3NH_3PbI_3 perovskite and the newly synthesized HTMs following sequential deposition method, which allows us to reach power conversion efficiencies as high as 11.4 %. The easy of synthesis, low cost and relatively high performance of newly synthesized HTMs has great prospects for commercial applications in the near-future. (authors)

  17. Modulation of the acidity of niobic acid by ion-doping: Effects of nature and amount of the dopant ions

    Energy Technology Data Exchange (ETDEWEB)

    Carniti, Paolo [Dipartimento di Chimica, Università degli Studi di Milano (UNIMI), Milano (Italy); Gervasini, Antonella, E-mail: antonella.gervasini@unimi.it [Dipartimento di Chimica, Università degli Studi di Milano (UNIMI), Milano (Italy); Marzo, Matteo [Dipartimento di Chimica, Università degli Studi di Milano (UNIMI), Milano (Italy); Auroux, Aline [Université Lyon 1, CNRS, UMR 5256, (IRCELYON), Villeurbanne (France)

    2013-09-10

    Highlights: ► Mitigation of the surface acidity of niobic acid was pursued by K-, Ba-, and Nd-doping. ► Thermal techniques of study were effective for the acidity study. ► The nature of the dopant influences the effectiveness of the acidity tuning of niobic acid. ► The acidity of the doped surfaces decreased with increasing the dopant species added to niobic acid. ► The samples showed different acidity when measured in gas–solid phase (intrinsic acidity) and water (effective acidity). - Abstract: The acidity of niobic acid (NBO) has been successfully mitigated and tuned by addition of K{sup +}, Ba{sup 2+} and Nd{sup 3+} dopant species in amounts from 1 to 15 atom nm{sup −2}. The characterization of the intrinsic acid properties of the samples was performed by adsorption of NH{sub 3} in a volumetric–microcalorimetric coupled line and by temperature programmed desorption (TPD) of 2-phenylethylamine in a thermogravimetric apparatus. The K-dopant was more effective in decreasing the acidity of niobic acid than the Ba- and Nd-dopants. Complementary measurements of the effective acidity of the samples in water by base titrations with 2-phenylethylamine completed the study and revealed a different picture of the effect of the three dopants on the NBO acidity in water. All the results indicated that the K-dopant targeted more selectively the Brønsted acid sites, acting as an ion-exchanger, while Ba- and Nd-species predominantly acted on the Lewis acid sites of the NBO surface.

  18. Sensitivity analysis of uranium solubility under strongly oxidizing conditions

    International Nuclear Information System (INIS)

    Liu, L.; Neretnieks, I.

    1999-01-01

    To evaluate the effect of geochemical conditions in the repository on the solubility of uranium under strongly oxidizing conditions, a mathematical model has been developed to determine the solubility, by utilizing a set of nonlinear algebraic equations to describe the chemical equilibria in the groundwater environment. The model takes into account the predominant precipitation-dissolution reactions, hydrolysis reactions and complexation reactions that may occur under strongly oxidizing conditions. The model also includes the solubility-limiting solids induced by the presence of carbonate, phosphate, silicate, calcium, and sodium in the groundwater. The thermodynamic equilibrium constants used in the solubility calculations are essentially taken from the NEA Thermochemical Data Base of Uranium, with some modification and some uranium minerals added, such as soddyite, rutherfordite, uranophane, uranyl orthophosphate, and becquerelite. By applying this model, the sensitivities of uranium solubility to variations in the concentrations of various groundwater component species are systematically investigated. The results show that the total analytical concentrations of carbonate, phosphate, silicate, and calcium in deep groundwater play the most important role in determining the solubility of uranium under strongly oxidizing conditions

  19. Oxidative dissolution of ADOPT compared to standard UO2 fuel

    International Nuclear Information System (INIS)

    Nilsson, Kristina; Roth, Olivia; Jonsson, Mats

    2017-01-01

    In this work we have studied oxidative dissolution of pure UO 2 and ADOPT (UO 2 doped with Al and Cr) pellets using H 2 O 2 and gammaradiolysis to induce the process. There is a small but significant difference in the oxidative dissolution rate of UO 2 and ADOPT pellets, respectively. However, the difference in oxidative dissolution yield is insignificant. Leaching experiments were also performed on in-reactor irradiated ADOPT and UO 2 pellets under oxidizing conditions. The results indicate that the U(VI) release is slightly slower from the ADOPT pellet compared to the UO 2. This could be attributed to differences in exposed surface area. However, fission products with low UO 2 solubility display a higher relative release from ADOPT fuel compared to standard UO 2 -fuel. This is attributed to a lower matrix solubility imposed by the dopants in ADOPT fuel. The release of Cs is higher from UO 2 which is attributed to the larger grain size of ADOPT. - Highlights: •Oxidative dissolution of ADOPT fuel is compared to standard UO 2 fuel. •Only marginal differences are observed. •The main difference observed is in the relative release rate of fission products. •Differences are claimed to be attributed to a lower matrix solubility imposed by the dopants in ADOPT fuel.

  20. The Impact of Dopant Segregation on the Maximum Carrier Density in Si:P Multilayers.

    Science.gov (United States)

    Keizer, Joris G; McKibbin, Sarah R; Simmons, Michelle Y

    2015-07-28

    Abrupt dopant profiles and low resistivity are highly sought after qualities in the silicon microelectronics industry and, more recently, in the development of an all epitaxial Si:P based quantum computer. If we increase the active carrier density in silicon to the point where the material becomes superconducting, while maintaining a low thermal budget, it will be possible to fabricate nanoscale superconducting devices using the highly successful technique of depassivation lithography. In this work, we investigate the dopant profile and activation in multiple high density Si:P δ-layers fabricated by stacking individual layers with intervening silicon growth. We determine that dopant activation is ultimately limited by the formation of P-P dimers due to the segregation of dopants between multilayers. By increasing the encapsulation thickness between subsequent layers, thereby minimizing the formation of these deactivating defects, we are able to achieve an active carrier density of ns = 4.5 ×10(14) cm(-2) for a triple layer. The results of electrical characterization are combined with those of secondary ion mass spectroscopy to construct a model that accurately describes the impact of P segregation on the final active carrier density in Si:P multilayers. Our model predicts that a 3D active carrier density of 8.5 × 10(20) cm(-3) (1.7 atom %) can be achieved.

  1. Deuterium oxide normalizes blood pressure and vascular calcium uptake in Dahl salt-sensitive hypertensive rats

    International Nuclear Information System (INIS)

    Vasdev, S.; Prabhakaran, V.; Sampson, C.A.

    1990-01-01

    This study examined the effect of 25% deuterium oxide in drinking water on systolic blood pressure, uptakes of calcium, and rubidium 86 by aortas of Dahl salt-sensitive rats on 0.4% (low) and 8% (high) sodium chloride (salt) diet. Twenty-four rats were divided into four groups. Groups I and II were on the low salt diet and groups III and IV on the high salt diet from 6 weeks of age. Additionally, at 10 weeks of age groups I and III were placed on 100% water and groups II and IV on 25% deuterium oxide. At 14 weeks, systolic blood pressure, uptakes of calcium, and rubidium 86 by aortas were significantly higher (p less than 0.01) in rats on the high salt diet as compared with those on the low salt diet. Deuterium oxide intake normalized systolic blood pressure and aortic calcium uptake but not aortic rubidium 86 uptake in hypertensive rats on the high salt diet. Deuterium oxide had no effect on blood pressure or aortic calcium uptake in rats on the low salt diet. The parallel increase in systolic blood pressure and vascular calcium uptake suggests that increased calcium uptake mechanisms are associated with hypertension in salt-sensitive Dahl rats. Furthermore, deuterium oxide appears to normalize elevated blood pressure in salt-sensitive hypertensive rats by normalizing elevated vascular (aortic) calcium uptake

  2. Investigation of phase stability and oxide ion performance in new perovskite-type bismuth vanadate

    International Nuclear Information System (INIS)

    Al-Alas, Ahlam; Beg, Saba; Al-Areqi, Niyazi A.S.

    2012-01-01

    Samples of the BICDVOX system, formulated as Bi 4 Cd x V 2−x O 11−(3x/2)−δ in the Cd substitution range 0 ≤ x ≤ 0.25 were synthesized using the standard solid state reaction.The correlation between phase stability and oxide ion performance were investigated by variable temperature XRPD, DSC and AC impedance spectroscopy. The substitution of V 5+ by Cd 2+ exhibited different phase transitions upon varying composition. For compositions with x ≤ 0.05, two successive transitions; α↔β↔γ are evident, while the β↔γ transition exists in the composition range 0.05 4+ → V 5+ re–oxidation results in increased defect trapping effects in the system at higher temperatures. -- Highlights: ► γ-Stabilized BICDVOX at lower dopant concentrations. ► Good oxide-ion conductivity at lower temperatures. ► High temperature-vanadium reduction with lower dopant concentrations.

  3. SIRT1 sensitizes hepatocellular carcinoma cells expressing hepatitis B virus X protein to oxidative stress-induced apoptosis

    International Nuclear Information System (INIS)

    Srisuttee, Ratakorn; Koh, Sang Seok; Malilas, Waraporn; Moon, Jeong; Cho, Il-Rae; Jhun, Byung Hak; Horio, Yoshiyuki; Chung, Young-Hwa

    2012-01-01

    Highlights: ► Up-regulation of SIRT1 protein and activity sensitizes Hep3B-HBX cells to oxidative stress-induced apoptosis. ► Nuclear localization of SIRT1 is not required for oxidation-induced apoptosis. ► Ectopic expression and enhanced activity of SIRT1 attenuate JNK phosphorylation. ► Inhibition of SIRT1 activity restores resistance to oxidation-induced apoptosis through JNK activation. -- Abstract: We previously showed that SIRT1 deacetylase inhibits proliferation of hepatocellular carcinoma cells expressing hepatitis B virus (HBV) X protein (HBX), by destabilization of β-catenin. Here, we report another role for SIRT1 in HBX-mediated resistance to oxidative stress. Ectopic expression and enhanced activity of SIRT1 sensitize Hep3B cells stably expressing HBX to oxidative stress-induced apoptosis. SIRT1 mutant analysis showed that nuclear localization of SIRT1 is not required for sensitization of oxidation-mediated apoptosis. Furthermore, ectopic expression of SIRT1 and treatment with resveratrol (a SIRT1 activator) attenuated JNK phosphorylation, which is a prerequisite for resistance to oxidative stress-induced apoptosis. Conversely, suppression of SIRT1 activity with nicotinamide inhibited the effect of resveratrol on JNK phosphorylation, leading to restoration of resistance to oxidation-induced apoptosis. Taken together, these results suggest that up-regulation of SIRT1 under oxidative stress may be a therapeutic strategy for treatment of hepatocellular carcinoma cells related to HBV through inhibition of JNK activation.

  4. SIRT1 sensitizes hepatocellular carcinoma cells expressing hepatitis B virus X protein to oxidative stress-induced apoptosis

    Energy Technology Data Exchange (ETDEWEB)

    Srisuttee, Ratakorn [WCU, Department of Cogno-Mechatronics Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Koh, Sang Seok [Immunotherapy Research Center, Korea Research Institute of Bioscience and Biotechnology, University of Science and Technology, Daejeon 305-333 (Korea, Republic of); Department of Functional Genomics, University of Science and Technology, Daejeon 305-333 (Korea, Republic of); Malilas, Waraporn; Moon, Jeong; Cho, Il-Rae [WCU, Department of Cogno-Mechatronics Engineering, Pusan National University, Busan 609-735 (Korea, Republic of); Jhun, Byung Hak [Department of Applied Nanoscience, Pusan National University, Busan 609-735 (Korea, Republic of); Horio, Yoshiyuki [Department of Pharmacology, Sapporo Medical University, Sapporo 060-8556 (Japan); Chung, Young-Hwa, E-mail: younghc@pusan.ac.kr [WCU, Department of Cogno-Mechatronics Engineering, Pusan National University, Busan 609-735 (Korea, Republic of)

    2012-12-07

    Highlights: Black-Right-Pointing-Pointer Up-regulation of SIRT1 protein and activity sensitizes Hep3B-HBX cells to oxidative stress-induced apoptosis. Black-Right-Pointing-Pointer Nuclear localization of SIRT1 is not required for oxidation-induced apoptosis. Black-Right-Pointing-Pointer Ectopic expression and enhanced activity of SIRT1 attenuate JNK phosphorylation. Black-Right-Pointing-Pointer Inhibition of SIRT1 activity restores resistance to oxidation-induced apoptosis through JNK activation. -- Abstract: We previously showed that SIRT1 deacetylase inhibits proliferation of hepatocellular carcinoma cells expressing hepatitis B virus (HBV) X protein (HBX), by destabilization of {beta}-catenin. Here, we report another role for SIRT1 in HBX-mediated resistance to oxidative stress. Ectopic expression and enhanced activity of SIRT1 sensitize Hep3B cells stably expressing HBX to oxidative stress-induced apoptosis. SIRT1 mutant analysis showed that nuclear localization of SIRT1 is not required for sensitization of oxidation-mediated apoptosis. Furthermore, ectopic expression of SIRT1 and treatment with resveratrol (a SIRT1 activator) attenuated JNK phosphorylation, which is a prerequisite for resistance to oxidative stress-induced apoptosis. Conversely, suppression of SIRT1 activity with nicotinamide inhibited the effect of resveratrol on JNK phosphorylation, leading to restoration of resistance to oxidation-induced apoptosis. Taken together, these results suggest that up-regulation of SIRT1 under oxidative stress may be a therapeutic strategy for treatment of hepatocellular carcinoma cells related to HBV through inhibition of JNK activation.

  5. Highly sensitive determination of atropine using cobalt oxide nanostructures: Influence of functional groups on the signal sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Soomro, Razium Ali, E-mail: raziumsoomro@gmail.com [Interface Analysis Centre, School of Physics, University of Bristol, Bristol, BS8 1TL (United Kingdom); National Centre of Excellence in Analytical Chemistry, University of Sindh, Jamshoro, 76080 (Pakistan); Nafady, Ayman [Department of Chemistry, College of Science, King Saud University, Riyadh (Saudi Arabia); Department of Chemistry, Faculty of Science, Sohag University, Sohag (Egypt); Hallam, Keith Richard [Interface Analysis Centre, School of Physics, University of Bristol, Bristol, BS8 1TL (United Kingdom); Jawaid, Sana [National Centre of Excellence in Analytical Chemistry, University of Sindh, Jamshoro, 76080 (Pakistan); Al Enizi, Abdullah [Department of Chemistry, College of Science, King Saud University, Riyadh (Saudi Arabia); Sherazi, Syed Tufail Hussain; Sirajuddin [National Centre of Excellence in Analytical Chemistry, University of Sindh, Jamshoro, 76080 (Pakistan); Ibupoto, Zafar Hussain [Dr M.A. Kazi Institute of Chemistry, University of Sindh, Jamshoro, 76080 (Pakistan); Willander, Magnus [Department of Science and Technology, Campus Norrkoping, Linkoping University, SE-60174, Norrkoping (Sweden)

    2016-12-15

    This study describes sensitive determination of atropine using glassy carbon electrodes (GCE) modified with Co{sub 3}O{sub 4} nanostructures. The as-synthesised nanostructures were grown using cysteine (CYS), glutathione (GSH) and histidine (HYS) as effective templates under hydrothermal action. The obtained morphologies revealed interesting structural features, including both cavity-based and flower-shaped structures. The as-synthesised morphologies were noted to actively participate in electro-catalysis of atropine (AT) drug where GSH-assisted structures exhibited the best signal response in terms of current density and over-potential value. The study also discusses the influence of functional groups on the signal sensitivity of atropine electro-oxidation. The functionalisation was carried with the amino acids originally used as effective templates for the growth of Co{sub 3}O{sub 4} nanostructures. The highest increment was obtained when GSH was used as the surface functionalising agent. The GSH-functionalised Co{sub 3}O{sub 4}-modified electrode was utilised for the electro-chemical sensing of AT in a concentration range of 0.01–0.46 μM. The developed sensor exhibited excellent working linearity (R{sup 2} = 0.999) and signal sensitivity up to 0.001 μM of AT. The noted high sensitivity of the sensor is associated with the synergy of superb surface architectures and favourable interaction facilitating the electron transfer kinetics for the electro-catalytic oxidation of AT. Significantly, the developed sensor demonstrated excellent working capability when used for AT detection in human urine samples with strong anti-interference potential against common co-existing species, such as glucose, fructose, cysteine, uric acid, dopamine and ascorbic acid. - Highlights: • Template-assisted growth of Co{sub 3}O{sub 4} nanostructures. • Shape-dependent electro-catalysis of atropine. • Effect of functionalisation of signal sensitivity.

  6. Effect of substrate type, dopant and thermal treatment on ...

    Indian Academy of Sciences (India)

    Effect of substrate type, dopant and thermal treatment on physicochemical properties of TiO2–SnO2 sol–gel films. I STAMBOLOVA. ∗. , V BLASKOV, S VASSILEV†, M SHIPOCHKA and A LOUKANOV‡. Institute of General and Inorganic Chemistry, †Institute of Electrochemistry and Energy Systems, BAS,. Acad. G. Bonchev ...

  7. A survey of acceptor dopants for β-Ga2O3

    Science.gov (United States)

    Lyons, John L.

    2018-05-01

    With a wide band gap, high critical breakdown voltage and commercially available substrates, Ga2O3 is a promising material for next-generation power electronics. Like most wide-band-gap semiconductors, obtaining better control over its electrical conductivity is critically important, but has proven difficult to achieve. Although efficient p-type doping in Ga2O3 is not expected, since theory and experiment indicate the self-trapping of holes, the full development of this material will require a better understanding of acceptor dopants. Here the properties of group 2, group 5 and group 12 acceptor impurities in β-Ga2O3 are explored using hybrid density functional calculations. All impurities are found to exhibit acceptor transition levels above 1.3 eV. After examining formation energies as a function of chemical potential, Mg (followed closely by Be) is determined to be the most stable acceptor species.

  8. Color optimization of single emissive white OLEDs via energy transfer between RGB fluorescent dopants

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Nam Ho; Kim, You-Hyun; Yoon, Ju-An; Lee, Sang Youn [Department of Green Energy and Semiconductor Engineering, Hoseo University, Asan (Korea, Republic of); Ryu, Dae Hyun [Department of Information Technology, Hansei University, Gunpo (Korea, Republic of); Wood, Richard [Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7 (Canada); Moon, C.-B. [Department of Green Energy and Semiconductor Engineering, Hoseo University, Asan (Korea, Republic of); Kim, Woo Young, E-mail: wykim@hoseo.edu [Department of Green Energy and Semiconductor Engineering, Hoseo University, Asan (Korea, Republic of); Department of Engineering Physics, McMaster University, Hamilton, Ontario, Canada L8S 4L7 (Canada)

    2013-11-15

    The electroluminescent characteristics of white organic light-emitting diodes (WOLEDs) were investigated including single emitting layer (SEL) with an ADN host and dopants; BCzVBi, C545T, and DCJTB for blue, green and red emission, respectively. The structure of the high efficiency WOLED device was; ITO/NPB(700 Å)/ADN: BCzVBi-7%:C545T-0.05%:DCJTB-0.1%(300 Å)/Bphen(300 Å)/Liq(20 Å)/Al(1200 Å) for mixing three primary colors. Luminous efficiency was 9.08 cd/A at 3.5 V and Commission Intenationale de L’eclairage (CIE{sub x,y}) coordinates of white emission was measured as (0.320, 0.338) at 8 V while simulated CIE{sub x,y} coordinates were (0.336, 0.324) via estimation from each dopant's PL spectrum. -- Highlights: • This paper observes single-emissive-layered white OLED using fluorescent dopants. • Electrical and optical properties are analyzed. • Color stability of white OLED is confirmed for new planar light source.

  9. Color optimization of single emissive white OLEDs via energy transfer between RGB fluorescent dopants

    International Nuclear Information System (INIS)

    Kim, Nam Ho; Kim, You-Hyun; Yoon, Ju-An; Lee, Sang Youn; Ryu, Dae Hyun; Wood, Richard; Moon, C.-B.; Kim, Woo Young

    2013-01-01

    The electroluminescent characteristics of white organic light-emitting diodes (WOLEDs) were investigated including single emitting layer (SEL) with an ADN host and dopants; BCzVBi, C545T, and DCJTB for blue, green and red emission, respectively. The structure of the high efficiency WOLED device was; ITO/NPB(700 Å)/ADN: BCzVBi-7%:C545T-0.05%:DCJTB-0.1%(300 Å)/Bphen(300 Å)/Liq(20 Å)/Al(1200 Å) for mixing three primary colors. Luminous efficiency was 9.08 cd/A at 3.5 V and Commission Intenationale de L’eclairage (CIE x,y ) coordinates of white emission was measured as (0.320, 0.338) at 8 V while simulated CIE x,y coordinates were (0.336, 0.324) via estimation from each dopant's PL spectrum. -- Highlights: • This paper observes single-emissive-layered white OLED using fluorescent dopants. • Electrical and optical properties are analyzed. • Color stability of white OLED is confirmed for new planar light source

  10. Observation of dopant-profile independent electron transport in sub-monolayer TiO{sub x} stacked ZnO thin films grown by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Saha, D., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Misra, P., E-mail: sahaphys@gmail.com, E-mail: pmisra@rrcat.gov.in; Joshi, M. P.; Kukreja, L. M. [Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Das, Gangadhar [Indus Synchrotrons Utilisation Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2016-01-18

    Dopant-profile independent electron transport has been observed through a combined study of temperature dependent electrical resistivity and magnetoresistance measurements on a series of Ti incorporated ZnO thin films with varying degree of static-disorder. These films were grown by atomic layer deposition through in-situ vertical stacking of multiple sub-monolayers of TiO{sub x} in ZnO. Upon decreasing ZnO spacer layer thickness, electron transport smoothly evolved from a good metallic to an incipient non-metallic regime due to the intricate interplay of screening of spatial potential fluctuations and strength of static-disorder in the films. Temperature dependent phase-coherence length as extracted from the magnetotransport measurement revealed insignificant role of inter sub-monolayer scattering as an additional channel for electron dephasing, indicating that films were homogeneously disordered three-dimensional electronic systems irrespective of their dopant-profiles. Results of this study are worthy enough for both fundamental physics perspective and efficient applications of multi-stacked ZnO/TiO{sub x} structures in the emerging field of transparent oxide electronics.

  11. Exciton-dopant and exciton-charge interactions in electronically doped OLEDs

    International Nuclear Information System (INIS)

    Williams, Christopher; Lee, Sergey; Ferraris, John; Zakhidov, A. Anvar

    2004-01-01

    The electronic dopants, like tetrafluorocyanoquinodimethane (F 4 -TCNQ) molecules, used for p-doping of hole transport layers in organic light-emitting diodes (OLEDs) are found to quench the electroluminescence (EL) if they diffuse into the emissive layer. We observed EL quenching in OLED with F 4 -TCNQ doped N,N'-diphenyl-N'N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine hole transport layer at large dopant concentrations, >5%. To separate the effects of exciton-dopant quenching, from exciton-polaron quenching we have intentionally doped the emissive layer of (8-tris-hydroxyquinoline) with three acceptors (A) of different electron affinities: F 4 -TCNQ, TCNQ, and C 60 , and found that C 60 is the strongest EL-quencher, while F 4 -TCNQ is the weakest, contrary to intuitive expectations. The new effects of charge transfer and usually considered energy transfer from exciton to neutral (A) and charged acceptors (A - ) are compared as channels for non-radiative Ex-A decay. At high current loads the EL quenching is observed, which is due to decay of Ex on free charge carriers, hole polarons P + . We consider contributions to Ex-P + interaction by short-range charge transfer and describe the structure of microscopic charge transfer (CT)-processes responsible for it. The formation of metastable states of 'charged excitons' (predicted and studied by Agranovich et al. Chem. Phys. 272 (2001) 159) by electron transfer from a P to an Ex is pointed out, and ways to suppress non-radiative Ex-P decay are suggested

  12. Solvent effects on dopant-free pH-falling polymerization of aniline

    Czech Academy of Sciences Publication Activity Database

    Rakić, A. A.; Vukomanović, M.; Trifunovic, S.; Travas-Sejdic, J.; Chaudhary, O. J.; Horský, Jiří; Ciric-Marjanovic, G.

    2015-01-01

    Roč. 209, November (2015), s. 279-296 ISSN 0379-6779 Institutional support: RVO:61389013 Keywords : dopant-free template -free method * nanostructures * polyaniline Subject RIV: CD - Macromolecular Chemistry Impact factor: 2.299, year: 2015

  13. A sensitivity study of the oxidation of compressed natural gas on platinum

    KAUST Repository

    Badra, Jihad; Masri, Assaad Rachid; Farooq, Aamir

    2013-01-01

    This paper presents a sensitivity study for the oxidation of methane (CH4) over platinum (Pt). Some dominant reactions in the CH 4-Pt surface chemistry were identified and the rates of these reactions were subsequently modified to enhance

  14. Sensitizing effects of NOx on CH4 oxidation at high pressure

    DEFF Research Database (Denmark)

    Rasmussen, Christian Lund; Rasmussen, Anja Egede; Glarborg, Peter

    2008-01-01

    The CH4/O2/NOx system is investigated in a laboratory-scale high pressure laminar flow reactor with the purpose of elucidating the sensitizing effects of NOx on CH4 oxidation at high pressures and medium temperatures. Experiments are conducted at 100, 50, and 20 bar, 600-900 K, and stoichiometric...... ratios ranging from highly reducing to oxidizing conditions. The experimental results are interpreted in terms of a detailed kinetic model drawn from previous work of the authors, including an updated reaction subset for the direct interactions of NOx and C1-2 hydrocarbon species relevant...

  15. Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

    Science.gov (United States)

    Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

    2017-09-01

    We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

  16. Optimized Laser Thermal Annealing on Germanium for High Dopant Activation and Low Leakage Current

    DEFF Research Database (Denmark)

    Shayesteh, Maryam; O' Connell, Dan; Gity, Farzan

    2014-01-01

    In this paper, state-of-the-art laser thermal annealing is used to fabricate Ge diodes. We compared the effect of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical properties of phosphorus and Arsenic-doped n +/p junctions. Using LTA, high carrier...... implant conditions. On the other hand, RTA revealed very high I on/I off ratio ∼ 107 and n ∼ 1, at the cost of high dopant diffusion and lower carrier concentrations which would degrade scalability and access resistance....

  17. Improving gas sensing properties of graphene by introducing dopants and defects: a first-principles study

    International Nuclear Information System (INIS)

    Zhang Yonghui; Chen Yabin; Zhou Kaige; Liu Caihong; Zeng Jing; Zhang Haoli; Peng Yong

    2009-01-01

    The interactions between four different graphenes (including pristine, B- or N-doped and defective graphenes) and small gas molecules (CO, NO, NO 2 and NH 3 ) were investigated by using density functional computations to exploit their potential applications as gas sensors. The structural and electronic properties of the graphene-molecule adsorption adducts are strongly dependent on the graphene structure and the molecular adsorption configuration. All four gas molecules show much stronger adsorption on the doped or defective graphenes than that on the pristine graphene. The defective graphene shows the highest adsorption energy with CO, NO and NO 2 molecules, while the B-doped graphene gives the tightest binding with NH 3 . Meanwhile, the strong interactions between the adsorbed molecules and the modified graphenes induce dramatic changes to graphene's electronic properties. The transport behavior of a gas sensor using B-doped graphene shows a sensitivity two orders of magnitude higher than that of pristine graphene. This work reveals that the sensitivity of graphene-based chemical gas sensors could be drastically improved by introducing the appropriate dopant or defect.

  18. Oxidative dissolution of ADOPT compared to standard UO{sub 2} fuel

    Energy Technology Data Exchange (ETDEWEB)

    Nilsson, Kristina [School of Chemical Science and Engineering, Applied Physical Chemistry, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden); Roth, Olivia [Studsvik Nuclear AB, SE-611 82 Nyköping (Sweden); Jonsson, Mats, E-mail: matsj@kth.se [School of Chemical Science and Engineering, Applied Physical Chemistry, KTH Royal Institute of Technology, SE-100 44 Stockholm (Sweden)

    2017-05-15

    In this work we have studied oxidative dissolution of pure UO{sub 2} and ADOPT (UO{sub 2} doped with Al and Cr) pellets using H{sub 2}O{sub 2} and gammaradiolysis to induce the process. There is a small but significant difference in the oxidative dissolution rate of UO{sub 2} and ADOPT pellets, respectively. However, the difference in oxidative dissolution yield is insignificant. Leaching experiments were also performed on in-reactor irradiated ADOPT and UO{sub 2} pellets under oxidizing conditions. The results indicate that the U(VI) release is slightly slower from the ADOPT pellet compared to the UO{sub 2.} This could be attributed to differences in exposed surface area. However, fission products with low UO{sub 2} solubility display a higher relative release from ADOPT fuel compared to standard UO{sub 2}-fuel. This is attributed to a lower matrix solubility imposed by the dopants in ADOPT fuel. The release of Cs is higher from UO{sub 2} which is attributed to the larger grain size of ADOPT. - Highlights: •Oxidative dissolution of ADOPT fuel is compared to standard UO{sub 2} fuel. •Only marginal differences are observed. •The main difference observed is in the relative release rate of fission products. •Differences are claimed to be attributed to a lower matrix solubility imposed by the dopants in ADOPT fuel.

  19. Origin of electrolyte-dopant dependent sulfur poisoning of SOFC anodes

    DEFF Research Database (Denmark)

    Zeng, Zhenhua; Björketun, Mårten E; Ebbesen, Sune

    2013-01-01

    The mechanisms governing the sulfur poisoning of the triple phase boundary (TPB) of Ni-XSZ (X2O3 stabilized zirconia) anodes have been investigated using density functional theory. The calculated sulfur adsorption energies reveal a clear correlation between the size of the cation dopant X3...

  20. Dye-Sensitized Solar Cells Based on High Surface Area Nanocrystalline Zinc Oxide Spheres

    Directory of Open Access Journals (Sweden)

    Pavuluri Srinivasu

    2011-01-01

    Full Text Available High surface area nanocrystalline zinc oxide material is fabricated using mesoporous nanostructured carbon as a sacrificial template through combustion process. The resulting material is characterized by XRD, N2 adsorption, HR-SEM, and HR-TEM. The nitrogen adsorption measurement indicates that the materials possess BET specific surface area ca. 30 m2/g. Electron microscopy images prove that the zinc oxide spheres possess particle size in the range of 0.12 μm–0.17 μm. The nanocrystalline zinc oxide spheres show 1.0% of energy conversion efficiency for dye-sensitized solar cells.

  1. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Science.gov (United States)

    Alver, Ü.; Tanrıverdi, A.

    2016-08-01

    In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  2. Origin of electrolyte-dopant dependent sulfur poisoning of SOFC anodes.

    Science.gov (United States)

    Zeng, ZhenHua; Björketun, Mårten E; Ebbesen, Sune; Mogensen, Mogens B; Rossmeisl, Jan

    2013-05-14

    The mechanisms governing the sulfur poisoning of the triple phase boundary (TPB) of Ni-XSZ (X2O3 stabilized zirconia) anodes have been investigated using density functional theory. The calculated sulfur adsorption energies reveal a clear correlation between the size of the cation dopant X(3+) and the sulfur tolerance of the Ni-XSZ anode; the smaller the ionic radius, the higher the sulfur tolerance. The mechanistic study shows that the size of X(3+) strongly influences XSZ's surface energy, which in turn determines the adhesion of Ni to XSZ. The Ni-XSZ interaction has a direct impact on the Ni-S interaction and on the relative stability of reconstructed and pristine Ni(100) facets at the TPB. Together, these two effects control the sulfur adsorption on the Ni atoms at the TPB. The established relationships explain experimentally observed dopant-dependent anode performances and provide a blueprint for the future search for and preparation of highly sulfur tolerant anodes.

  3. Limitations in Using Chemical Oxidative Potential to Understand Oxidative Stress from Particulate Matter

    Science.gov (United States)

    Chan, A. W. H.; Wang, S.; Wang, X.; Kohl, L.; Chow, C. W.

    2017-12-01

    Particulate matter (PM) in the atmosphere is known to cause adverse cardiorespiratory health effects. It has been suggested that the ability of PM to generate oxidative stress leads to a proinflammatory response. In this work, we study the biological relevance of using a chemical oxidative potential (OP) assay to evaluate proinflammatory response in airway epithelial cells. Here we study the OPs of laboratory secondary organic aerosol (SOA) and metal mixtures, ambient PM from India, ash from the 2016 Alberta wildfires, and diesel exhaust particles. We use SOA derived from naphthalene and from monoterpenes as model systems for SOA. We measure OP using the dithiothreitol (DTT) assay, and cytosolic reactive oxygen species (ROS) production in BEAS-2B cell culture was measured using CellROX assay. We found that both SOA and copper show high OPs individually, but the OP of the combined SOA/copper mixture, which is more atmospherically relevant, was lower than either of the individual OPs. The reduced activity is attributed to chelation between metals and organic compounds using proton nuclear magnetic resonance. There is reasonable association between DTT activity and cellular ROS production within each particle type, but weak association across different particle types, suggesting that particle composition plays an important role in distinguishing between antioxidant consumption and ROS production. Our results highlight that while oxidative potential is a useful metric of PM's ability to generate oxidative stress, the chemical composition and cellular environment should be considered in understanding health impacts of PM.

  4. Improved optical properties and detectivity of an uncooled silicon carbide mid-wave infrared optical detector with increased dopant concentration

    International Nuclear Information System (INIS)

    Lim, Geunsik; Kar, Aravinda; Manzur, Tariq

    2012-01-01

    An n-type 4H-SiC substrate is doped with gallium using a laser doping technique and its optical response is investigated at the mid-wave infrared (MWIR) wavelength 4.21 μm as a function of the dopant concentration. The dopant creates a p-type energy level of 0.3 eV, which is the energy of a photon corresponding to the MWIR wavelength 4.21 μm. Therefore, Ga-doped SiC can be used as an uncooled MWIR detector because an optical signal was obtained at this wavelength when the sample was at room temperature. The energy level of the Ga dopant in the substrate was confirmed by optical absorption spectroscopy. Secondary ion mass spectroscopy (SIMS) of the doped samples revealed an enhancement in the solid solubility of Ga in the substrate when doping is carried out by increasing the number of laser scans. A higher dopant concentration increases the number of holes in the dopant energy level, enabling photoexcitation of more electrons from the valence band by the incident MWIR photons. The detector performance improves as the dopant concentration increases from 1.15 × 10 19 to 6.25 × 10 20 cm −3 . The detectivity of the optical photodetector is found to be 1.07 × 10 10 cm Hz 1/2 W −1 for the case of doping with four laser passes. (paper)

  5. The Role of Oxidative Stress in the Etiopathogenesis of Gluten-Sensitive Enteropathy Disease

    Directory of Open Access Journals (Sweden)

    Kaplan Mustafa

    2017-09-01

    Full Text Available Background: The objective here is to examine the role of overall oxidative stress in the etiopathogenesis of gluten-sensitive enteropathy disease and its relationship with gluten free diet and autoantibodies.

  6. Sensitivity and Awareness: A Guide for Developing Understanding among Children.

    Science.gov (United States)

    McPhee, Norma H.; Favazza, Paddy C.; Lewis, Eleanore Grater

    This guide is designed specifically as a resource for classroom teachers, librarians, or consultants who are concerned with helping children develop an understanding and an ease with people who are different, especially people with disabilities. The book includes materials to be used in sensitivity and awareness discussion sessions based on 12…

  7. Self-assembling nano-diameter needlelike pinning centers in YBCO, utilizing a foreign element dopant

    Energy Technology Data Exchange (ETDEWEB)

    Sawh, Ravi-Persad [Texas Center for Superconductivity and Physics Department, University of Houston, 632 Science and Research Bldg 1, Houston Texas 77204-5005 (United States); Weinstein, Roy [Texas Center for Superconductivity and Physics Department, University of Houston, 632 Science and Research Bldg 1, Houston Texas 77204-5005 (United States); Obot, Victor [Department of Mathematics, Texas Southern University, 3100 Cleburne St, Houston Texas 77004-4597 (United States); Parks, Drew [Texas Center for Superconductivity and Physics Department, University of Houston, 632 Science and Research Bldg 1, Houston Texas 77204-5005 (United States); Gandini, Alberto [Texas Center for Superconductivity and Physics Department, University of Houston, 632 Science and Research Bldg 1, Houston Texas 77204-5005 (United States); Skorpenske, Harley [Texas Center for Superconductivity and Physics Department, University of Houston, 632 Science and Research Bldg 1, Houston Texas 77204-5005 (United States)

    2006-06-01

    Although pinning centers created by irradiation presently produce the highest J{sub c}, it is probable that ultimately these will be emulated by chemical pinning centers. The best pinning centers produced by irradiation nevertheless provide guidelines for desirable morphology of chemical pinning structures. The highest J{sub c} produced earlier in textured HTS was obtained using isotropic high-energy ions produced by fission of {sup 235}U. This so-called U/n process produces pinning centers of diameter {<=} 4.5 nm, with an effective length of {approx}2.7 {mu}m. Maximum J{sub c} occurs for pinning center density of {approx}10{sup 10} cm{sup -3}. We use this as a model for desired chemical pinning centers. Our approach to introducing chemical pinning centers has been to produce precipitates within the HTS containing elements not native to the HTS, and to seek needlelike (columnar) deposits of small diameter. We report here on the formation of needlelike or columnar deposits in textured Y123 containing a dopant foreign to Y123. It serves as a demonstration that self-assembling nanometer diameter columns utilizing a dopant foreign to the HTS system are a feasible goal. These deposits, however, do not fully meet the ultimate requirements of pinning centers because the desired deposits should be smaller. The self-assembling columns formed contain titanium, are {approx}500 nm in diameter, and up to 10 {mu}m long. The size and morphology of the deposits vary with the mass of admixed Ti dopant. J{sub c} is decreased for small dopant mass. At larger dopant masses needlelike precipitates form, and J{sub c} increases again. A small range of mass of admixed Ti exists in which J{sub c} is enhanced by pinning. In the range of admixed Ti mass studied in these experiments there is a negligible effect on T{sub c}. Magnetization studies of J{sub c} are also reported.

  8. Predicting Low Energy Dopant Implant Profiles in Semiconductors using Molecular Dynamics

    Energy Technology Data Exchange (ETDEWEB)

    Beardmore, K.M.; Gronbech-Jensen, N.

    1999-05-02

    The authors present a highly efficient molecular dynamics scheme for calculating dopant density profiles in group-IV alloy, and III-V zinc blende structure materials. Their scheme incorporates several necessary methods for reducing computational overhead, plus a rare event algorithm to give statistical accuracy over several orders of magnitude change in the dopant concentration. The code uses a molecular dynamics (MD) model to describe ion-target interactions. Atomic interactions are described by a combination of 'many-body' and pair specific screened Coulomb potentials. Accumulative damage is accounted for using a Kinchin-Pease type model, inelastic energy loss is represented by a Firsov expression, and electronic stopping is described by a modified Brandt-Kitagawa model which contains a single adjustable ion-target dependent parameter. Thus, the program is easily extensible beyond a given validation range, and is therefore truly predictive over a wide range of implant energies and angles. The scheme is especially suited for calculating profiles due to low energy and to situations where a predictive capability is required with the minimum of experimental validation. They give examples of using the code to calculate concentration profiles and 2D 'point response' profiles of dopants in crystalline silicon and gallium-arsenide. Here they can predict the experimental profile over five orders of magnitude for <100> and <110> channeling and for non-channeling implants at energies up to hundreds of keV.

  9. Pyrolytically grown indium sulfide sensitized zinc oxide nanowires for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Komurcu, Pelin; Can, Emre Kaan; Aydin, Erkan; Semiz, Levent [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Gurol, Alp Eren; Alkan, Fatma Merve [Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Sankir, Mehmet; Sankir, Nurdan Demirci [Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, 06560 Ankara (Turkey); Department of Materials Science and Nanotechnology Engineering, TOBB University of Economics and Technology, 06560 Ankara (Turkey)

    2015-11-15

    Zinc oxide (ZnO) nanowires, sensitized with spray pyrolyzed indium sulfide, were obtained by chemical bath deposition. The XRD analysis indicated dominant evolution of hexagonal ZnO phase. Significant gain in photoelectrochemical current using ZnO nanowires is largely accountable to enhancement of the visible light absorption and the formation of heterostructure. The maximum photoconversion efficiency of 2.77% was calculated for the indium sulfide sensitized ZnO nanowire photoelectrodes. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Atomic-level spatial distributions of dopants on silicon surfaces: toward a microscopic understanding of surface chemical reactivity

    Science.gov (United States)

    Hamers, Robert J.; Wang, Yajun; Shan, Jun

    1996-11-01

    We have investigated the interaction of phosphine (PH 3) and diborane (B 2H 6) with the Si(001) surface using scanning tunneling microscopy, infrared spectroscopy, and ab initio molecular orbital calculations. Experiment and theory show that the formation of PSi heterodimers is energetically favorable compared with formation of PP dimers. The stability of the heterodimers arises from a large strain energy associated with formation of PP dimers. At moderate P coverages, the formation of PSi heterodimers leaves the surface with few locations where there are two adjacent reactive sites. This in turn modifies the chemical reactivity toward species such as PH 3, which require only one site to adsorb but require two adjacent sites to dissociate. Boron on Si(001) strongly segregates into localized regions of high boron concentration, separated by large regions of clean Si. This leads to a spatially-modulated chemical reactivity which during subsequent growth by chemical vapor deposition (CVD) leads to formation of a rough surface. The implications of the atomic-level spatial distribution of dopants on the rates and mechanisms of CVD growth processes are discussed.

  11. A Bacterial Biosensor for Oxidative Stress Using the Constitutively Expressed Redox-Sensitive Protein roGFP2

    Directory of Open Access Journals (Sweden)

    Carlos R. Arias-Barreiro

    2010-06-01

    Full Text Available A highly specific, high throughput-amenable bacterial biosensor for chemically induced cellular oxidation was developed using constitutively expressed redox-sensitive green fluorescent protein roGFP2 in E. coli (E. coli-roGFP2. Disulfide formation between two key cysteine residues of roGFP2 was assessed using a double-wavelength ratiometric approach. This study demonstrates that only a few minutes were required to detect oxidation using E. coli-roGFP2, in contrast to conventional bacterial oxidative stress sensors. Cellular oxidation induced by hydrogen peroxide, menadione, sodium selenite, zinc pyrithione, triphenyltin and naphthalene became detectable after 10 seconds and reached the maxima between 80 to 210 seconds, contrary to Cd2+, Cu2+, Pb2+, Zn2+ and sodium arsenite, which induced the oxidation maximum immediately. The lowest observable effect concentrations (in ppm were determined as 1.0 x 10−7 (arsenite, 1.0 x 10−4 (naphthalene, 1.0 x 10−4 (Cu2+, 3.8 x 10−4 (H2O2, 1.0 x 10−3 (Cd2+, 1.0 x 10−3 (Zn2+, 1.0 x 10−2 (menadione, 1.0 (triphenyltin, 1.56 (zinc pyrithione, 3.1 (selenite and 6.3 (Pb2+, respectively. Heavy metal-induced oxidation showed unclear response patterns, whereas concentration-dependent sigmoid curves were observed for other compounds. In vivo GSH content and in vitro roGFP2 oxidation assays together with E. coli-roGFP2 results suggest that roGFP2 is sensitive to redox potential change and thiol modification induced by environmental stressors. Based on redox-sensitive technology, E. coli-roGFP2 provides a fast comprehensive detection system for toxicants that induce cellular oxidation.

  12. Dye-sensitized solar cells based on nanostructured zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Conradt, Jonas; Maier-Flaig, Florian; Sartor, Janos; Fallert, Johannes [Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany); Szmytkowski, Jedrzej; Kalt, Heinz [Karlsruhe Institute of Technology (KIT), Karlsruhe (Germany); Center for Functional Nanostructures (CFN), Karlsruhe (Germany); Reinhard, Manuel; Colsmann, Alexander [Karlsruhe Institute of Technology (KIT), Lichttechnisches Institut, Karlsruhe (Germany); Lemmer, Uli [Center for Functional Nanostructures (CFN), Karlsruhe (Germany); Karlsruhe Institute of Technology (KIT), Lichttechnisches Institut, Karlsruhe (Germany); Balaban, Teodor Silviu [Center for Functional Nanostructures (CFN), Karlsruhe (Germany); Karlsruhe Institute of Technology (KIT), Institute for Nanotechnology, Karlsruhe (Germany)

    2009-07-01

    Hybrid solar cells represent a promising (cost-efficient) alternative to pure inorganic solar cells. We present dye-sensitized solar cells (DSSC) which are based on a zinc oxide (ZnO) electrode covered with a ruthenium dye. Our work focuses on the morphology of the ZnO electrode and its impact on the photovoltaic performance of the solar cell. Nanocrystalline ZnO powder layers and arrays of nanorods are incorporated into the DSSCs. The ZnO nanorods are grown by vapor transport deposition. The morphology and doping concentration of the rods can be controlled by the choice of substrate material, growth condition and catalytic metal layers. The nanorod arrays are expected to fasten the electron transport towards the anode and thereby improve the solar cell efficiency. In addition, novel self-assembling (porphyrin) dyes are tested as sensitizer within a DSSC.

  13. Simple, complex and hyper-complex understanding - enhanced sensitivity in observation of information

    DEFF Research Database (Denmark)

    Bering Keiding, Tina

    for construction and analysis of empirical information. A quick overview on empirical research drawing on Luhmann reveals a diverse complex of analytical strategies and empirical methods. Despite differences between strategies and methods they have in common that understanding of uttered information is crucial...... in their production of empirically founded knowledge. However research generally seems to pay more attention to production of uttered information than to selection of understanding. The aim of this contribution is to sketch out a suggestion to how selection of understanding can be systematized in order to produce...... enhanced transparency in selection of understanding as well as enhanced sensitivity and definition in dept. The contribution suggest that we distinguish between three types of understanding; simple, complex and hyper-complex understanding. Simple understanding is the simultaneous selection of understanding...

  14. Reduction of blue tungsten oxide

    International Nuclear Information System (INIS)

    Wilken, T.; Wert, C.; Woodhouse, J.; Morcom, W.

    1975-01-01

    A significant portion of commercial tungsten is produced by hydrogen reduction of oxides. Although several modes of reduction are possible, hydrogen reduction is used where high purity tungsten is required and where the addition of other elements or compounds is desired for modification of the metal, as is done for filaments in the lamp industry. Although several investigations of the reduction of oxides have been reported (1 to 5), few principles have been developed which can aid in assessment of current commercial practice. The reduction process was examined under conditions approximating commercial practice. The specific objectives were to determine the effects of dopants, of water vapor in the reducing atmosphere, and of reduction temperature upon: (1) the rate of the reaction by which blue tungsten oxide is reduced to tungsten metal, (2) the intermediate oxides associated with reduction, and (3) the morphology of the resulting tungsten powder

  15. Three dimensional mapping of Fe dopants in ceria nanocrystals using direct spectroscopic electron tomography

    Energy Technology Data Exchange (ETDEWEB)

    Goris, Bart; Meledina, Maria; Turner, Stuart [EMAT, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium); Zhong, Zhichao [Centrum Wiskunde & Informatica, P.O. Box 94079, 1090 GB Amsterdam (Netherlands); Batenburg, K. Joost [Centrum Wiskunde & Informatica, P.O. Box 94079, 1090 GB Amsterdam (Netherlands); Mathematical Institute, Leiden University, Niels Bohrweg 1, 2333CA Leiden (Netherlands); Bals, Sara [EMAT, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerp (Belgium)

    2016-12-15

    Electron tomography is a powerful technique for the 3D characterization of the morphology of nanostructures. Nevertheless, resolving the chemical composition of complex nanostructures in 3D remains challenging and the number of studies in which electron energy loss spectroscopy (EELS) is combined with tomography is limited. During the last decade, dedicated reconstruction algorithms have been developed for HAADF-STEM tomography using prior knowledge about the investigated sample. Here, we will use the prior knowledge that the experimental spectrum of each reconstructed voxel is a linear combination of a well-known set of references spectra in a so-called direct spectroscopic tomography technique. Based on a simulation experiment, it is shown that this technique provides superior results in comparison to conventional reconstruction methods for spectroscopic data, especially for spectrum images containing a relatively low signal to noise ratio. Next, this technique is used to investigate the spatial distribution of Fe dopants in Fe:Ceria nanoparticles in 3D. It is shown that the presence of the Fe{sup 2+} dopants is correlated with a reduction of the Ce atoms from Ce{sup 4+} towards Ce{sup 3+}. In addition, it is demonstrated that most of the Fe dopants are located near the voids inside the nanoparticle. - Highlights: • A direct tomographic reconstruction technique is proposed for spectroscopic data. • Spectrum fitting is combined with a tomography reconstruction in a single step. • The technique yields superior results for data with a low signal to noise ratio. • The technique is applied to map Fe dopants in ceria nanoparticles.

  16. Site-selective dopant profiling of p-n junction specimens in the dual-beam FIB/SEM system

    International Nuclear Information System (INIS)

    Chee, K W A; Beanland, R; Midgley, P A; Humphreys, C J

    2010-01-01

    Results from site-specific dopant profiling in a dual-beam FIB/SEM system are reported. Si specimens containing p-n junctions were milled using Ga + ion beam energies ranging from 30 keV to 2 keV, and analysed in situin the vacuum chamber. We compare the dopant contrast observed when milling a cleaved surface to that obtained from a side-wall of a trench cut using 30 kV Ga + ions, and using successively lower ion beam energies. The latter technique is suitable for site-specific dopant profiling. We find that lower energy ion beam milling significantly improves contrast, but only achieves 50 % of that observed on a freshly-cleaved surface. Furthermore, the contrast on a side-wall previously milled using high energy Ga + ions is less than that of a cleaved surface subjected to the same ion beam energy.

  17. Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots.

    Science.gov (United States)

    Nayak, Alpana; Unayama, Satomi; Tai, Seishiro; Tsuruoka, Tohru; Waser, Rainer; Aono, Masakazu; Valov, Ilia; Hasegawa, Tsuyoshi

    2018-02-01

    Controlling movements of electrons and holes is the key task in developing today's highly sophisticated information society. As transistors reach their physical limits, the semiconductor industry is seeking the next alternative to sustain its economy and to unfold a new era of human civilization. In this context, a completely new information token, i.e., ions instead of electrons, is promising. The current trend in solid-state nanoionics for applications in energy storage, sensing, and brain-type information processing, requires the ability to control the properties of matter at the ultimate atomic scale. Here, a conceptually novel nanoarchitectonic strategy is proposed for controlling the number of dopant atoms in a solid electrolyte to obtain discrete electrical properties. Using α-Ag 2+ δ S nanodots with a finite number of nonstoichiometry excess dopants as a model system, a theory matched with experiments is presented that reveals the role of physical parameters, namely, the separation between electrochemical energy levels and the cohesive energy, underlying atomic-scale manipulation of dopants in nanodots. This strategy can be applied to different nanoscale materials as their properties strongly depend on the number of doping atoms/ions, and has the potential to create a new paradigm based on controlled single atom/ion transfer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. First-principles study of the effects of halogen dopants on the properties of intergranular films in silicon nitride ceramics

    International Nuclear Information System (INIS)

    Painter, Gayle S.; Becher, Paul F.; Kleebe, H.-J.; Pezzotti, G.

    2002-01-01

    The nanoscale intergranular films that form in the sintering of ceramics often occur as adherent glassy phases separating the crystalline grains in the ceramic. Consequently, the properties of these films are often equal in importance to those of the constituent grains in determining the ceramic's properties. The measured characteristics of the silica-rich phase separating the crystalline grains in Si 3 N 4 and many other ceramics are so reproducible that SiO 2 has become a model system for studies of intergranular films (IGF's). Recently, the influence of fluorine and chlorine dopants in SiO 2 -rich IGF's in silicon nitride was precisely documented by experiment. Along with the expected similarities between the halogens, some dramatically contrasting effects were found. But the atomic-scale mechanisms distinguishing the effects F and Cl on IGF behavior have not been well understood. First-principles density functional calculations reported here provide a quantum-level description of how these dopant-host interactions affect the properties of IGF's, with specific modeling of F and Cl in the silica-rich IGF in silicon nitride. Calculations were carried out for the energetics, structural changes, and forces on the atoms making up a model cluster fragment of an SiO 2 intergranular film segment in silicon nitride with and without dopants. Results show that both anions participate in the breaking of bonds within the IGF, directly reducing the viscosity of the SiO 2 -rich film and promoting decohesion. Observed differences in the way fluorine and chlorine affect IGF behavior become understandable in terms of the relative stabilities of the halogens as they interact with Si atoms that have lost one if their oxygen bridges

  19. Coupling of erbium dopants to yttrium orthosilicate photonic crystal cavities for on-chip optical quantum memories

    Energy Technology Data Exchange (ETDEWEB)

    Miyazono, Evan; Zhong, Tian; Craiciu, Ioana; Kindem, Jonathan M.; Faraon, Andrei, E-mail: faraon@caltech.edu [T. J. Watson Laboratory of Applied Physics, California Institute of Technology, 1200 E California Blvd, Pasadena, California 91125 (United States)

    2016-01-04

    Erbium dopants in crystals exhibit highly coherent optical transitions well suited for solid-state optical quantum memories operating in the telecom band. Here, we demonstrate coupling of erbium dopant ions in yttrium orthosilicate to a photonic crystal cavity fabricated directly in the host crystal using focused ion beam milling. The coupling leads to reduction of the photoluminescence lifetime and enhancement of the optical depth in microns-long devices, which will enable on-chip quantum memories.

  20. A combined theoretical and experimental investigation about the influence of the dopant in the anodic electropolymerization of α-tetrathiophene

    International Nuclear Information System (INIS)

    Aleman, Carlos; Oliver, Ramon; Brillas, Enric; Casanovas, Jordi; Estrany, Francesc

    2006-01-01

    This work presents an experimental and theoretical investigation about the influence of the dopant in the electropolymerization of α-tetrathiophene. The results derived from anodic polymerization of α-tetrathiophene using SCN - , Cl - , Br - , NO 3 - ClO 3 - andClO 4 - as dopant agents are compared with theoretical results provided by quantum mechanical calculations on 1:1 charge-transfer complexes formed by α-tetrathiophene and X=SCN, Cl, Br, NO 3 , ClO 3 and ClO 4 . The consistency between experimental and theoretical results allows explain and rationalize the influence of the dopant in the electropolymerization of α-tetrathiophene

  1. Thermoluminescence study of aluminium oxide doped germanium prepared by combustion synthesis method

    Directory of Open Access Journals (Sweden)

    Saharin Nurul Syazlin Binti

    2017-01-01

    Full Text Available The present paper reports the optimum concentration of germanium (Ge dopant in aluminium oxide (AhO3 samples prepared by combustion synthesis (CS method for thermoluminescence (TL studies. The samples were prepared at various Ge concentration i.e. 1 to 5% mol. The phase formation of un-doped and Ge-doped Al2O3 samples was determined using X-ray Diffraction (XRD. The sharp peaks present in the XRD pattern confirms the crystallinity of the samples. The samples were then exposed to 50 Gy Cobalt-60 sources (Gamma cell 220. TL glow curves were measured and recorded using a Harshaw Model 3500 TLD reader. Comparison of TL peaks were observed to obtain the best composition of Ge dopants. A simple glow curves TL peak at around 175̊C for all composition samples was observed. It was also found that the composition of aluminium oxide doped with 3.0% of germanium exhibits the highest thermoluminescence (TL intensity which is 349747.04 (a.u.

  2. Ionization of EPA contaminants in direct and dopant-assisted atmospheric pressure photoionization and atmospheric pressure laser ionization.

    Science.gov (United States)

    Kauppila, Tiina J; Kersten, Hendrik; Benter, Thorsten

    2015-06-01

    Seventy-seven EPA priority environmental pollutants were analyzed using gas chromatography-mass spectrometry (GC-MS) equipped with an optimized atmospheric pressure photoionization (APPI) and an atmospheric pressure laser ionization (APLI) interface with and without dopants. The analyzed compounds included e.g., polycyclic aromatic hydrocarbons (PAHs), nitro compounds, halogenated compounds, aromatic compounds with phenolic, acidic, alcohol, and amino groups, phthalate and adipatic esters, and aliphatic ethers. Toluene, anisole, chlorobenzene, and acetone were tested as dopants. The widest range of analytes was ionized using direct APPI (66/77 compounds). The introduction of dopants decreased the amount of compounds ionized in APPI (e.g., 54/77 with toluene), but in many cases the ionization efficiency increased. While in direct APPI the formation of molecular ions via photoionization was the main ionization reaction, dopant-assisted (DA) APPI promoted ionization reactions, such as charge exchange and proton transfer. Direct APLI ionized a much smaller amount of compounds than APPI (41/77 compounds), showing selectivity towards compounds with low ionization energies (IEs) and long-lived resonantly excited intermediate states. DA-APLI, however, was able to ionize a higher amount of compounds (e.g. 51/77 with toluene), as the ionization took place entirely through dopant-assisted ion/molecule reactions similar to those in DA-APPI. Best ionization efficiency in APPI and APLI (both direct and DA) was obtained for PAHs and aromatics with O- and N-functionalities, whereas nitro compounds and aliphatic ethers were the most difficult to ionize. Halogenated aromatics and esters were (mainly) ionized in APPI, but not in APLI.

  3. Multicomponent mixed dopant optimization for rapid screening of polycyclic aromatic hydrocarbons using ultra high performance liquid chromatography coupled to atmospheric pressure photoionization high-resolution mass spectrometry

    KAUST Repository

    Sioud, Salim

    2012-05-04

    RATIONALE To enhance the ionization efficiencies in atmospheric pressure photoionization mass spectrometry a dopant with favorable ionization energy such as chlorobenzene is typically used. These dopants are typically toxic and difficult to mix with water-soluble organic solvents. In order to achieve a more efficient and less toxic dopant, a multicomponent mixed dopant was explored. METHODS A multicomponent mixed dopant for non-targeted rapid screening of polycyclic aromatic hydrocarbons (PAHs) was developed and optimized using ultra high performance liquid chromatography (UPLC) coupled to atmospheric pressure photoionization high-resolution mass spectrometry. Various single and multicomponent mixed dopants consisting of ethanol, chlorobenzene, bromobenzene, anisole and toluene were evaluated. RESULTS Fourteen out of eighteen PAHs were successfully separated and detected at low pg/μL levels within 5 min with high mass accuracy ≤4 ppm. The optimal mixed multicomponent dopant consisted of ethanol/chlorobenzene/bromobenzene/anisole (98.975:0.1:0.9:0.025, v/v %) and it improved the limit of detection (LOD) by 2- to 10-fold for the tested PAHs compared to those obtained with pure chlorobenzene. CONCLUSIONS A novel multicomponent dopant that contains 99% ethanol and 1% mixture of chlorobenzene, bromobenzene and anisole was found to be an effective dopant mixture to ionize PAHs. The developed UPLC multicomponent dopant assisted atmospheric pressure photoionization high-resolution mass spectrometry offered a rapid non targeted screening method for detecting the PAHs at low pg/;μL levels within a 5 min run time with high mass accuracy a;circ4 ppm. Copyright © 2012 John Wiley & Sons, Ltd.

  4. Understanding dynamics using sensitivity analysis: caveat and solution

    Science.gov (United States)

    2011-01-01

    Background Parametric sensitivity analysis (PSA) has become one of the most commonly used tools in computational systems biology, in which the sensitivity coefficients are used to study the parametric dependence of biological models. As many of these models describe dynamical behaviour of biological systems, the PSA has subsequently been used to elucidate important cellular processes that regulate this dynamics. However, in this paper, we show that the PSA coefficients are not suitable in inferring the mechanisms by which dynamical behaviour arises and in fact it can even lead to incorrect conclusions. Results A careful interpretation of parametric perturbations used in the PSA is presented here to explain the issue of using this analysis in inferring dynamics. In short, the PSA coefficients quantify the integrated change in the system behaviour due to persistent parametric perturbations, and thus the dynamical information of when a parameter perturbation matters is lost. To get around this issue, we present a new sensitivity analysis based on impulse perturbations on system parameters, which is named impulse parametric sensitivity analysis (iPSA). The inability of PSA and the efficacy of iPSA in revealing mechanistic information of a dynamical system are illustrated using two examples involving switch activation. Conclusions The interpretation of the PSA coefficients of dynamical systems should take into account the persistent nature of parametric perturbations involved in the derivation of this analysis. The application of PSA to identify the controlling mechanism of dynamical behaviour can be misleading. By using impulse perturbations, introduced at different times, the iPSA provides the necessary information to understand how dynamics is achieved, i.e. which parameters are essential and when they become important. PMID:21406095

  5. Orientation Sensitivity of Oxygen Evolution Reaction on Hematite

    NARCIS (Netherlands)

    Zhang, X. Q.; Cao, C.; Bieberle, A.

    2016-01-01

    The sensitivity of the surface orientation on photoelectrochemical water oxidation has recently been reported by experimental studies. However, a detailed theoretical understanding is still missing. Density functional theory + Hubbard U (DFT + U) calculations are therefore carried out in order to

  6. Crystal structure, chemical bond and enhanced performance of β-Zn4Sb3 compounds with interstitial indium dopant

    International Nuclear Information System (INIS)

    Tang, Dingguo; Zhao, Wenyu; Yu, Jian; Wei, Ping; Zhou, Hongyu; Zhu, Wanting; Zhang, Qingjie

    2014-01-01

    Highlights: • The interstitial In dopant leads to the local structural perturbations in β-Zn 4 Sb 3 . • The simultaneous increases in α and σ are observed in the In-doped Zn 4 Sb 3 compounds. • The In dopant plays different doping behaviors by the dopant contents in the samples. • A maximum ZT of 1.41 at 700 K is achieved for the In-doped Zn 4 Sb 3 compounds. - Abstract: In-doped β-Zn 4 Sb 3 compounds (Zn 4−x In x Sb 3 , 0 ⩽ x ⩽ 0.24) were prepared by melt-quenching and spark plasma sintering technology in the work. The resultant samples were systematically investigated by X-ray diffraction, X-ray photoelectron spectroscopy, differential scanning calorimetry and thermoelectric property measurements. The In dopant was identified to preferentially occupy the interstitial site in β-Zn 4 Sb 3 and led to the local structural perturbations near the 12c Sb2 and 36f Zn1 sites. The Auger parameters of Zn and Sb indicated that the increase in the valence of Zn was attributed to the charge transfer from Zn to In atoms. The binding energies of In 3d 5/2 core level showed that the interstitial In dopant was n-type dopant (In 3+ ) in slightly In-doped Zn 4−x In x Sb 3 , but acted as acceptor and was p-type dopant (In + ) in heavily In-doped ones. The discovery provides a reasonable explanation for the puzzled relation between σ and x for Zn 4−x In x Sb 3 . Simultaneously increasing the electrical conductivity and Seebeck coefficient of Zn 4−x In x Sb 3 can be realized through the local structural perturbations. The significantly enhanced power factor and the intrinsic low thermal conductivity resulted in a remarkable increase in the dimensionless figure of merit (ZT). The highest ZT reached 1.41 at 700 K for Zn 3.82 In 0.18 Sb 3 and increased by 68% compared with that of the undoped β-Zn 4 Sb 3

  7. Perspective analysis of tri gate germanium tunneling field-effect transistor with dopant segregation region at source/drain

    Science.gov (United States)

    Liu, Liang-kui; Shi, Cheng; Zhang, Yi-bo; Sun, Lei

    2017-04-01

    A tri gate Ge-based tunneling field-effect transistor (TFET) has been numerically studied with technology computer aided design (TCAD) tools. Dopant segregated Schottky source/drain is applied to the device structure design (DS-TFET). The characteristics of the DS-TFET are compared and analyzed comprehensively. It is found that the performance of n-channel tri gate DS-TFET with a positive bias is insensitive to the dopant concentration and barrier height at n-type drain, and that the dopant concentration and barrier height at a p-type source considerably affect the device performance. The domination of electron current in the entire BTBT current of this device accounts for this phenomenon and the tri-gate DS-TFET is proved to have a higher performance than its dual-gate counterpart.

  8. Iron oxide nanoparticle-micelles (ION-micelles for sensitive (molecular magnetic particle imaging and magnetic resonance imaging.

    Directory of Open Access Journals (Sweden)

    Lucas W E Starmans

    Full Text Available BACKGROUND: Iron oxide nanoparticles (IONs are a promising nanoplatform for contrast-enhanced MRI. Recently, magnetic particle imaging (MPI was introduced as a new imaging modality, which is able to directly visualize magnetic particles and could serve as a more sensitive and quantitative alternative to MRI. However, MPI requires magnetic particles with specific magnetic properties for optimal use. Current commercially available iron oxide formulations perform suboptimal in MPI, which is triggering research into optimized synthesis strategies. Most synthesis procedures aim at size control of iron oxide nanoparticles rather than control over the magnetic properties. In this study, we report on the synthesis, characterization and application of a novel ION platform for sensitive MPI and MRI. METHODS AND RESULTS: IONs were synthesized using a thermal-decomposition method and subsequently phase-transferred by encapsulation into lipidic micelles (ION-Micelles. Next, the material and magnetic properties of the ION-Micelles were analyzed. Most notably, vibrating sample magnetometry measurements showed that the effective magnetic core size of the IONs is 16 nm. In addition, magnetic particle spectrometry (MPS measurements were performed. MPS is essentially zero-dimensional MPI and therefore allows to probe the potential of iron oxide formulations for MPI. ION-Micelles induced up to 200 times higher signal in MPS measurements than commercially available iron oxide formulations (Endorem, Resovist and Sinerem and thus likely allow for significantly more sensitive MPI. In addition, the potential of the ION-Micelle platform for molecular MPI and MRI was showcased by MPS and MRI measurements of fibrin-binding peptide functionalized ION-Micelles (FibPep-ION-Micelles bound to blood clots. CONCLUSIONS: The presented data underlines the potential of the ION-Micelle nanoplatform for sensitive (molecular MPI and warrants further investigation of the Fib

  9. Quasi physisorptive two dimensional tungsten oxide nanosheets with extraordinary sensitivity and selectivity to NO2.

    Science.gov (United States)

    Khan, Hareem; Zavabeti, Ali; Wang, Yichao; Harrison, Christopher J; Carey, Benjamin J; Mohiuddin, Md; Chrimes, Adam F; De Castro, Isabela Alves; Zhang, Bao Yue; Sabri, Ylias M; Bhargava, Suresh K; Ou, Jian Zhen; Daeneke, Torben; Russo, Salvy P; Li, Yongxiang; Kalantar-Zadeh, Kourosh

    2017-12-14

    Attributing to their distinct thickness and surface dependent physicochemical properties, two dimensional (2D) nanostructures have become an area of increasing interest for interfacial interactions. Effectively, properties such as high surface-to-volume ratio, modulated surface activities and increased control of oxygen vacancies make these types of materials particularly suitable for gas-sensing applications. This work reports a facile wet-chemical synthesis of 2D tungsten oxide nanosheets by sonication of tungsten particles in an acidic environment and thermal annealing thereafter. The resultant product of large nanosheets with intrinsic substoichiometric properties is shown to be highly sensitive and selective to nitrogen dioxide (NO 2 ) gas, which is a major pollutant. The strong synergy between polar NO 2 molecules and tungsten oxide surface and also abundance of active surface sites on the nanosheets for molecule interactions contribute to the exceptionally sensitive and selective response. An extraordinary response factor of ∼30 is demonstrated to ultralow 40 parts per billion (ppb) NO 2 at a relatively low operating temperature of 150 °C, within the physisorption temperature band for tungsten oxide. Selectivity to NO 2 is demonstrated and the theory behind it is discussed. The structural, morphological and compositional characteristics of the synthesised and annealed materials are extensively characterised and electronic band structures are proposed. The demonstrated 2D tungsten oxide based sensing device holds the greatest promise for producing future commercial low-cost, sensitive and selective NO 2 gas sensors.

  10. Analysis of the dopant distribution in Co-deposited organic thin films by scanning transmission electron microscopy

    International Nuclear Information System (INIS)

    Paredes, Yolanda A.; Campos, Andrea P.C.; Achete, Carlos A.; Cremona, Marco

    2015-01-01

    Organic light-emitting diodes using phosphorescent dyes (PHOLEDs) have excellent performance, with internal quantum efficiencies approaching 100%. To maximize their performance, PHOLED devices use a conductive organic host material with a sufficiently dispersed phosphorescent guest to avoid concentration quenching. Fac-tris(2-phenylpyridine) iridium, [Ir(ppy)_3] is one of the most widely used green phosphorescent organic compounds. In this work, we used scanning transmission electron microscopy (STEM) equipped with HAADF (high-angle annular dark-field) and EDS (energy dispersive X-ray spectroscopy) detectors to analyze the distribution of the [Ir(ppy)_3] concentration in the host material. This analysis technique, employed for the first time in co-deposited organic thin films, can simultaneously obtain an image and its respective chemical information, allowing for definitive characterization of the distribution and morphology of [Ir(ppy)_3]. The technique was also used to analyze the effect of the vibration of the substrate during thermal co-deposition of the [Ir(ppy)_3] molecules into an organic matrix. - Highlights: • We present a methodology to analyze the dopant distribution in organic thin films. • The method combines HAADF-STEM imaging and EDS X-ray spectroscopy. • Ir(ppy)_3 dopant was co-deposited into Spiro2-CBP organic matrix. • The dopant was co-deposited with and without substrate vibration. • Images and chemical information of the dopant were simultaneously obtained.

  11. New cyclometalated iridium(III) complex as a phosphorescent dopant in organic light emitting devices

    Science.gov (United States)

    Ivanov, P.; Tomova, R.; Petrova, P.; Stanimirov, S.; Petkov, I.

    2014-05-01

    A new cyclometalated iridium (III) bis[2-(4-chlorophenyl)benzothiazolato-N,C2]-acetylacetonate, (Cl-bt)2Ir(acac), was synthesized and identified by 1H NMR and elemental analysis. The application was studied of the new compound as a dopant in the hole transporting layer (HTL) of the following organic light emitting diode (OLED) structure: HTL/EL/ETL, where HTL was 4,4'-bis(9H-carbazol-9-yl)biphenyl (CBP) or N,N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine (TPD), incorporated in a poly(N-vinylcarbazole) (PVK) matrix; EL was an electroluminescent layer of bis(8-hydroxy-2-methylquinoline)-(4-phenylpheno-xy) aluminum (BAlq); and ETL was an electron-transporting layer of bis[2-(2-benzothiazoly) phenolato]zinc(II) (Zn(btz)2). We established that the electroluminescence spectra of the OLEDs at different dopant concentrations were basically the sum of the greenish-blue emission of BAlq and the yellowish-green emission of the Ir complex. It was also found that increasing the dopant concentration resulted in an increase in the relative electroluminescent intensity of the Ir complex emission, while that of BAlq decreased, thus a fine tuning of the OLED color was observed.

  12. Multicomponent mixed dopant optimization for rapid screening of polycyclic aromatic hydrocarbons using ultra high performance liquid chromatography coupled to atmospheric pressure photoionization high-resolution mass spectrometry

    KAUST Repository

    Sioud, Salim; Amad, Maan H.; Al-Talla, Zeyad

    2012-01-01

    with water-soluble organic solvents. In order to achieve a more efficient and less toxic dopant, a multicomponent mixed dopant was explored. METHODS A multicomponent mixed dopant for non-targeted rapid screening of polycyclic aromatic hydrocarbons (PAHs

  13. Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals

    KAUST Repository

    Abdelhady, Ahmed L.

    2016-01-02

    Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.

  14. Excitonic pathway to photoinduced magnetism in colloidal nanocrystals with nonmagnetic dopants.

    Science.gov (United States)

    Pinchetti, Valerio; Di, Qiumei; Lorenzon, Monica; Camellini, Andrea; Fasoli, Mauro; Zavelani-Rossi, Margherita; Meinardi, Francesco; Zhang, Jiatao; Crooker, Scott A; Brovelli, Sergio

    2018-02-01

    Electronic doping of colloidal semiconductor nanostructures holds promise for future device concepts in optoelectronic and spin-based technologies. Ag + is an emerging electronic dopant in III-V and II-VI nanostructures, introducing intragap electronic states optically coupled to the host conduction band. With its full 4d shell Ag + is nonmagnetic, and the dopant-related luminescence is ascribed to decay of the conduction-band electron following transfer of the photoexcited hole to Ag + . This optical activation process and the associated modification of the electronic configuration of Ag + remain unclear. Here, we trace a comprehensive picture of the excitonic process in Ag-doped CdSe nanocrystals and demonstrate that, in contrast to expectations, capture of the photohole leads to conversion of Ag + to paramagnetic Ag 2+ . The process of exciton recombination is thus inextricably tied to photoinduced magnetism. Accordingly, we observe strong optically activated magnetism and diluted magnetic semiconductor behaviour, demonstrating that optically switchable magnetic nanomaterials can be obtained by exploiting excitonic processes involving nonmagnetic impurities.

  15. Heterovalent Dopant Incorporation for Bandgap and Type Engineering of Perovskite Crystals

    KAUST Repository

    Abdelhady, Ahmed L.; Saidaminov, Makhsud I.; Banavoth, Murali; Adinolfi, Valerio; Voznyy, Oleksandr; Katsiev, Khabiboulakh; Alarousu, Erkki; Comin, Riccardo; Dursun, Ibrahim; Sinatra, Lutfan; Sargent, Edward H.; Mohammed, Omar F.; Bakr, Osman

    2016-01-01

    Controllable doping of semiconductors is a fundamental technological requirement for electronic and optoelectronic devices. As intrinsic semiconductors, hybrid perovskites have so far been a phenomenal success in photovoltaics. The inability to dope these materials heterovalently (or aliovalently) has greatly limited their wider utilizations in electronics. Here we show an efficient in situ chemical route that achieves the controlled incorporation of trivalent cations (Bi3+, Au3+, or In3+) by exploiting the retrograde solubility behavior of perovskites. We term the new method dopant incorporation in the retrograde regime. We achieve Bi3+ incorporation that leads to bandgap tuning (∼300 meV), 104 fold enhancement in electrical conductivity, and a change in the sign of majority charge carriers from positive to negative. This work demonstrates the successful incorporation of dopants into perovskite crystals while preserving the host lattice structure, opening new avenues to tailor the electronic and optoelectronic properties of this rapidly emerging class of solution-processed semiconductors. © 2016 American Chemical Society.

  16. Anodic Titania Nanotube Arrays Sensitized with Mn- or Co-Doped CdS Nanocrystals

    International Nuclear Information System (INIS)

    Smith, York R.; Gakhar, Ruchi; Merwin, Augustus; Mohanty, Swomitra K.; Chidambaram, Dev; Misra, Mano

    2014-01-01

    Highlights: • Mn or Co doped CdS where synthesized and deposited onto TiO 2 nanotubular arrays. • Synthesis and deposition were achieved simultaneously using SILAR method. • Various characterization techniques demonstrate lattice incorporation of dopant. • Photoelectrochemical performance was analyzed using AM 1.5 irradiation. • Dopants increases depletion width of CdS and increase photoelectrochemical responses. - Abstract: The use of doped luminescent nanocrystals or quantum dots have mainly been explored for imaging applications; however, recently they have gained interest in solar energy conversion applications due to long electron lifetimes, tunable band gaps and emission by compositional control. In this study, we have examined the application of Mn or Co doped CdS nanocrystals as a sensitizing layer over titania nanotubular arrays synthesized via electrochemical anodization in photoelectrochemical applications. The doped and undoped CdS nanocrystals were simultaneously synthesized and deposited onto the titania surface by adoption of a successive ion layer adsorption-reaction (SILAR) method. Various characterization methods indicate lattice incorporation of the dopant within CdS. The addition of dopants to CdS was found to improve the photoelectrochemical performance by increasing the depletion width of the CdS nanocrystals and reducing recombination losses of charge carriers

  17. Quantitative sub-surface and non-contact imaging using scanning microwave microscopy

    International Nuclear Information System (INIS)

    Gramse, Georg; Kasper, Manuel; Hinterdorfer, Peter; Brinciotti, Enrico; Rankl, Christian; Kienberger, Ferry; Lucibello, Andrea; Marcelli, Romolo; Patil, Samadhan B.; Giridharagopal, Rajiv

    2015-01-01

    The capability of scanning microwave microscopy for calibrated sub-surface and non-contact capacitance imaging of silicon (Si) samples is quantitatively studied at broadband frequencies ranging from 1 to 20 GHz. Calibrated capacitance images of flat Si test samples with varying dopant density (10 15 –10 19 atoms cm −3 ) and covered with dielectric thin films of SiO 2 (100–400 nm thickness) are measured to demonstrate the sensitivity of scanning microwave microscopy (SMM) for sub-surface imaging. Using standard SMM imaging conditions the dopant areas could still be sensed under a 400 nm thick oxide layer. Non-contact SMM imaging in lift-mode and constant height mode is quantitatively demonstrated on a 50 nm thick SiO 2 test pad. The differences between non-contact and contact mode capacitances are studied with respect to the main parameters influencing the imaging contrast, namely the probe tip diameter and the tip–sample distance. Finite element modelling was used to further analyse the influence of the tip radius and the tip–sample distance on the SMM sensitivity. The understanding of how the two key parameters determine the SMM sensitivity and quantitative capacitances represents an important step towards its routine application for non-contact and sub-surface imaging. (paper)

  18. Optically Transparent Cathode for Co(III/II) Mediated Dye-Sensitized Solar Cells Based on Graphene Oxide

    Czech Academy of Sciences Publication Activity Database

    Kavan, Ladislav; Yum, J. H.; Graetzel, M.

    2012-01-01

    Roč. 4, č. 12 (2012), s. 6998-7005 ISSN 1944-8244 R&D Projects: GA AV ČR IAA400400804; GA AV ČR KAN200100801 Institutional support: RVO:61388955 Keywords : graphene oxide * reduced graphene oxide * dye-sensitized solar cell Subject RIV: CG - Electrochemistry Impact factor: 5.008, year: 2012

  19. New cyclometalated Iridium(III) beta-dicetone complex as phosphorescent dopant in Organic light emitting devices

    Science.gov (United States)

    Ivanov, P.; Petrova, P.; Stanimirov, S.; Tomova, R.

    2017-01-01

    A new Bis[4-(benzothiazolato-N,C2‧-2-yl)-N,N-dimethylaniline]Iridium(III) acetylacetonate (Me2N-bt) 2Ir(acac) was synthesized and identified by 1H NMR and elemental analysis. The application of the new compound as a dopant in the hole transporting layer (HTL) of Organic light emitting diode (OLED) structure: HTL/EL/ETL, where HTL was N,N’-bis(3-methylphenyl)-N,N’-diphenylbenzidine (TPD), incorporated in Poly(N-vinylcarbazole) (PVK) matrix, EL - electroluminescent layer of Bis(8-hydroxy-2-methylquinoline)-(4-phenylpheno-xy)aluminum (BAlq) and ETL - electron-transporting layer of Tris-(8-hydroxyquinoline) aluminum (Alq3) or Bis[2-(2-benzothiazoly) phenolato]zinc (Zn(btz)2). We established that the electroluminescent spectra of OLEDs at different concentrations of the dopant were basically the sum of the greenish-blue emission of BAlq and yellowish-green emission of Ir complex. It was found that with increasing of the dopant concentration the relative electroluminescent intensity of Iridium complex emission increased and this of BAlq decreased and as a result the fine tuning of OLED color was observed.

  20. Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

    International Nuclear Information System (INIS)

    Labidi, A.; Bejaoui, A.; Ouali, H.; Akkari, F. Chaffar; Hajjaji, A.; Gaidi, M.; Kanzari, M.; Bessais, B.; Maaref, M.

    2011-01-01

    The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 deg. C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 deg. C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.

  1. Dry air effects on the copper oxides sensitive layers formation for ethanol vapor detection

    Energy Technology Data Exchange (ETDEWEB)

    Labidi, A., E-mail: Ahmed_laabidi@yahoo.fr [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia); Bejaoui, A.; Ouali, H. [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia); Akkari, F. Chaffar [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT, Universite de Tunis el Manar, BP 37, Le belvedere 1002, Tunis (Tunisia); Hajjaji, A.; Gaidi, M. [Laboratoire de Photovoltaique, Centre de Recherches et de technologies de l' energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Kanzari, M. [Laboratoire de Photovoltaique et Materiaux Semi-conducteurs, ENIT, Universite de Tunis el Manar, BP 37, Le belvedere 1002, Tunis (Tunisia); Bessais, B. [Laboratoire de Photovoltaique, Centre de Recherches et de technologies de l' energie, Technopole de Borj-Cedria, BP 95, 2050 Hammam-Lif (Tunisia); Maaref, M. [URPSC (UR 99/13-18) Unite de Recherche de Physique des Semiconducteurs et Capteurs, IPEST, Universite de Carthage, BP 51, La Marsa 2070, Tunis (Tunisia)

    2011-09-15

    The copper oxide films have been deposited by thermal evaporation and annealed under ambient air and dry air respectively, at different temperatures. The structural characteristics of the films were investigated by X-ray diffraction. They showed the presences of two hydroxy-carbonate minerals of copper for annealing temperatures below 250 deg. C. Above this temperature the conductivity measurements during the annealing process, show a transition phase from metallic copper to copper oxides. The copper oxides sensitivity toward ethanol were performed using conductivity measurements at the working temperature of 200 deg. C. A decrease of conductivity was observed under ethanol vapor, showing the p-type semi-conducting characters of obtained copper oxide films. It was found that the sensing properties of copper oxide toward ethanol depend mainly on the annealing conditions. The best responses were obtained with copper layers annealed under dry air.

  2. Sensitivity enhancement of polysilicon piezo-resistive pressure sensors with phosphorous diffused resistors

    International Nuclear Information System (INIS)

    Sivakumar, K; Dasgupta, N; Bhat, K N; Natarajan, K

    2006-01-01

    It is generally accepted that the piezo-resistive coefficient in single crystal silicon is higher when P-type impurities such as boron are used for doping the resistors. In this paper we demonstrate that the sensitivity of polycrystalline silicon piezo-resistive pressure sensors can be enhanced considerably when phosphorus diffusion source is used instead of boron dopant for realizing the piezo-resistors. Pressure sensors have been designed and fabricated with the polycrystalline piezo-resistors connected in the form of a Wheatstone bridge and laid out on thermal oxide grown on membranes obtained with a Silicon On Insulator (SOI) approach. The SOI wafers required for this purpose have been realized in-house by Silicon Fusion Bonding (SFB) and etch back technique in our laboratory. This approach provides excellent isolation between the resistors and enables zero temperature coefficient of the polysilicon resistor. The results obtained in our laboratory have clearly demonstrated that by optimizing the phosphorus diffusion temperature and duration, it is possible to achieve sensitivities in excess of 20mV /Bar for bridge input voltage of 10V, with linearity within 1% over a differential pressure range up to 10Bar (10 6 Pascal), and burst pressure in excess of 50 Bar as compared to the 10mV /Bar sensitivity obtained with boron doped polysilicon piezo-resistors. This enhancement is attributed to grain boundary passivation by phosphorous atoms

  3. The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Zhan, Y.Q. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: yqzhan@fudan.edu.cn; Zhou, J. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Zhou, Y.C. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Wu, Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Yang, H. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Li, F.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Ding, X.M. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China); Hou, X.Y. [Surface Physics Laboratory (National Key Laboratory), Lab of Advanced Materials, Fudan University, Shanghai 200433 (China)]. E-mail: xyhou@fudan.edu.cn

    2007-05-07

    A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light.

  4. The effect of dopant-induced electron traps on spectrum evolution of doped organic light-emitting devices

    International Nuclear Information System (INIS)

    Zhan, Y.Q.; Zhou, J.; Zhou, Y.C.; Wu, Y.; Yang, H.; Li, F.Y.; Ding, X.M.; Hou, X.Y.

    2007-01-01

    A prototype of light emitting device with two symmetrically located Al/LiF electrodes is fabricated to study the voltage dependence of emission spectra. 4-(dicyanomethylene)-2-methyl-6- (pdimethylaminostyryl)-4H-pyran doped tris-(8-hydroxy-quinolinato) aluminum thin film is the emitting layer of the device. Experiments show that with increasing applied voltage the emission intensity of the device decreases, of which the dopant emission intensity decreases more steeply than that of the host. Based on the theory of space-charge-limited current in insulator with a single shallow trap level it is deduced that the photoluminescence intensity of the dopant emission decreases linearly with applied voltage, in good agreement with experimental measurements. The evolution of the emission spectra can be well explained by the suggested mechanism that the electrons are trapped in the dopant molecules, which blocks the energy transfer from the host, and leads to more excitons in the host to emit light

  5. Improved Understanding of In Situ Chemical Oxidation Contaminant Oxidation Kinetics

    Science.gov (United States)

    2007-12-01

    natural oxidant demand •OH hydroxide radical Ox oxidant O3 ozone PCE perchloroethylene HSO5− peroxymonosulfate PNDA p...properties (e.g., soil mineralogy , natural carbon content) affect oxidant mobility and stability in the subsurface, and develop a standardized natural...chlorinated ethenes For contaminant oxidation by activated S2O82−, it is more difficult to develop a general description of kobs vs. T because there are

  6. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    International Nuclear Information System (INIS)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S.; Shanholtz, E. R.

    2016-01-01

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  7. Polycrystalline silicon carbide dopant profiles obtained through a scanning nano-Schottky contact

    Energy Technology Data Exchange (ETDEWEB)

    Golt, M. C.; Strawhecker, K. E.; Bratcher, M. S. [U.S. Army Research Laboratory, WMRD, Aberdeen Proving Ground, Maryland 21005 (United States); Shanholtz, E. R. [ORISE, Belcamp, Maryland 21017 (United States)

    2016-07-14

    The unique thermo-electro-mechanical properties of polycrystalline silicon carbide (poly-SiC) make it a desirable candidate for structural and electronic materials for operation in extreme environments. Necessitated by the need to understand how processing additives influence poly-SiC structure and electrical properties, the distribution of lattice defects and impurities across a specimen of hot-pressed 6H poly-SiC processed with p-type additives was visualized with high spatial resolution using a conductive atomic force microscopy approach in which a contact forming a nano-Schottky interface is scanned across the sample. The results reveal very intricate structures within poly-SiC, with each grain having a complex core-rim structure. This complexity results from the influence the additives have on the evolution of the microstructure during processing. It was found that the highest conductivities localized at rims as well as at the interface between the rim and the core. The conductivity of the cores is less than the conductivity of the rims due to a lower concentration of dopant. Analysis of the observed conductivities and current-voltage curves is presented in the context of nano-Schottky contact regimes where the conventional understanding of charge transport to diode operation is no longer valid.

  8. Non-oxidative and oxidative torrefaction characterization and SEM observations of fibrous and ligneous biomass

    International Nuclear Information System (INIS)

    Chen, Wei-Hsin; Lu, Ke-Miao; Lee, Wen-Jhy; Liu, Shih-Hsien; Lin, Ta-Chang

    2014-01-01

    Highlights: • Non-oxidative and oxidative torrefaction of biomass is studied. • Two fibrous biomasses and two ligneous biomasses are tested. • SEM observations of four biomasses are provided. • Fibrous biomass is more sensitive to O 2 concentration than ligneous biomass. • The performance of non-oxidative torrefaction is better than that of oxidative torrefaction. - Abstract: Oxidative torrefaction is a method to reduce the operating cost of upgrading biomass. To understand the potential of oxidative torrefaction and its impact on the internal structure of biomass, non-oxidative and oxidative torrefaction of two fibrous biomass materials (oil palm fiber and coconut fiber) and two ligneous ones (eucalyptus and Cryptomeria japonica) at 300 °C for 1 h are studied and compared with each other. Scanning electron microscope (SEM) observations are also performed to explore the impact of torrefaction atmosphere on the lignocellulosic structure of biomass. The results indicate that the fibrous biomass is more sensitive to O 2 concentration than the ligneous biomass. In oxidative torrefaction, an increase in O 2 concentration decreases the solid yield. The energy yield is linearly proportional to the solid yield, which is opposite to the behavior of non-oxidative torrefaction. The performance of non-oxidative torrefaction is better than that of oxidative torrefaction. As a whole, ligneous biomass can be torrefied in oxidative environments at lower O 2 concentrations, whereas fibrous biomass is more suitable for non-oxidative torrefaction

  9. 3-D periodic mesoporous nickel oxide for nonenzymatic uric acid sensors with improved sensitivity

    International Nuclear Information System (INIS)

    Huang, Wei; Cao, Yang; Chen, Yong; Zhou, Yang; Huang, Qingyou

    2015-01-01

    Graphical abstract: The enzyme-less amperometric sensor based on 3-D periodic mesoporous NiO nanomaterials used in the detection of uric acid with detection limit of 0.005 μM (S/N = 3) over wide linear detection ranges up to 0.374 mM and with a high sensitivity of 756.26 μA mM"−"1 cm"−"2. - Highlights: • Microwave-assisted method was used to fabricate the 3-D periodic mesoporous NiO particles. • The mesoporous nickel oxide was applied to nonenzymatic uric acid biosensor. • The detection limit is 0.005 μM over wide linear detection ranges up to 0.374 mM. • The sensitivity is 756.26 μA mM"−"1 cm"−"2. - Abstract: 3-D periodic mesoporous nickel oxide (NiO) particles with crystalline walls have been synthesized through the microwave-assisted hard template route toward the KIT-6 silica. It was investigated as a nonenzymatic amperometric sensor for the detection of uric acid. 3-D periodic nickel oxide matrix has been obtained by the hard template route from the KIT-6 silica template. The crystalline nickel oxide belonged to the Ia3d space group, and its structure was characterized by X-ray diffraction (XRD), N_2 adsorption–desorption, and transmission electron microscopy (TEM). The analysis results showed that the microwave-assisted mesoporous NiO materials were more appropriate to be electrochemical sensors than the traditional mesoporous NiO. Cyclic voltammetry (CV) revealed that 3-D periodic NiO exhibited a direct electrocatalytic activity for the oxidation of uric acid in sodium hydroxide solution. The enzyme-less amperometric sensor used in the detection of uric acid with detection limit of 0.005 μM (S/N = 3) over wide linear detection ranges up to 0.374 mM and with a high sensitivity of 756.26 μA mM"−"1 cm"−"2, and a possible mechanism was also given in the paper.

  10. 3-D periodic mesoporous nickel oxide for nonenzymatic uric acid sensors with improved sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Wei; Cao, Yang, E-mail: caowang507@163.com; Chen, Yong; Zhou, Yang; Huang, Qingyou

    2015-12-30

    Graphical abstract: The enzyme-less amperometric sensor based on 3-D periodic mesoporous NiO nanomaterials used in the detection of uric acid with detection limit of 0.005 μM (S/N = 3) over wide linear detection ranges up to 0.374 mM and with a high sensitivity of 756.26 μA mM{sup −1} cm{sup −2}. - Highlights: • Microwave-assisted method was used to fabricate the 3-D periodic mesoporous NiO particles. • The mesoporous nickel oxide was applied to nonenzymatic uric acid biosensor. • The detection limit is 0.005 μM over wide linear detection ranges up to 0.374 mM. • The sensitivity is 756.26 μA mM{sup −1} cm{sup −2}. - Abstract: 3-D periodic mesoporous nickel oxide (NiO) particles with crystalline walls have been synthesized through the microwave-assisted hard template route toward the KIT-6 silica. It was investigated as a nonenzymatic amperometric sensor for the detection of uric acid. 3-D periodic nickel oxide matrix has been obtained by the hard template route from the KIT-6 silica template. The crystalline nickel oxide belonged to the Ia3d space group, and its structure was characterized by X-ray diffraction (XRD), N{sub 2} adsorption–desorption, and transmission electron microscopy (TEM). The analysis results showed that the microwave-assisted mesoporous NiO materials were more appropriate to be electrochemical sensors than the traditional mesoporous NiO. Cyclic voltammetry (CV) revealed that 3-D periodic NiO exhibited a direct electrocatalytic activity for the oxidation of uric acid in sodium hydroxide solution. The enzyme-less amperometric sensor used in the detection of uric acid with detection limit of 0.005 μM (S/N = 3) over wide linear detection ranges up to 0.374 mM and with a high sensitivity of 756.26 μA mM{sup −1} cm{sup −2}, and a possible mechanism was also given in the paper.

  11. A combined theoretical and experimental investigation about the influence of the dopant in the anodic electropolymerization of {alpha}-tetrathiophene

    Energy Technology Data Exchange (ETDEWEB)

    Aleman, Carlos [Departament d' Enginyeria Quimica, E.T.S. d' Enginyeria Industrial de Barcelona, Universitat Politecnica de Catalunya, Diagonal 647, Barcelona E-08028 (Spain)], E-mail: carlos.aleman@upc.edu; Oliver, Ramon [Unitat de Quimica Industrial, E.U.E. Tecnica Industrial de Barcelona, Universitat Politecnica de Catalunya, Comte d' Urgell 187, Barcelona E-08036 (Spain); Brillas, Enric [Departament de Quimica Fisica, Facultat de Quimica, Universitat de Barcelona, Marti i Franques 1, Barcelona E-08028 (Spain); Casanovas, Jordi [Departament de Quimica, Escola Politecnica Superior, Universitat de Lleida, c/Jaume II No. 69, Lleida E-25001 (Spain); Estrany, Francesc [Unitat de Quimica Industrial, E.U.E. Tecnica Industrial de Barcelona, Universitat Politecnica de Catalunya, Comte d' Urgell 187, Barcelona E-08036 (Spain)], E-mail: francesc.estrany@upc.edu

    2006-04-21

    This work presents an experimental and theoretical investigation about the influence of the dopant in the electropolymerization of {alpha}-tetrathiophene. The results derived from anodic polymerization of {alpha}-tetrathiophene using SCN{sup -}, Cl{sup -}, Br{sup -}, NO{sub 3}{sup -}ClO{sub 3}{sup -}andClO{sub 4}{sup -} as dopant agents are compared with theoretical results provided by quantum mechanical calculations on 1:1 charge-transfer complexes formed by {alpha}-tetrathiophene and X=SCN, Cl, Br, NO{sub 3}, ClO{sub 3} and ClO{sub 4}. The consistency between experimental and theoretical results allows explain and rationalize the influence of the dopant in the electropolymerization of {alpha}-tetrathiophene.

  12. Calcium oxide doped sorbents for CO{sub 2} uptake in the presence of SO{sub 2} at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lu, H.; Smirniotis, P.G. [University of Cincinnati, Cincinnati, OH (United States)

    2009-06-15

    There is an urgent need to understand sorbent tolerance for capturing carbon dioxide (CO{sub 2}) in the presence of sulfur dioxide (SO{sub 2}). Sulfur oxide is emitted together with CO{sub 2} from various combustion systems and can cause severe air pollution. In this study, the behavior of different dopants on the performance of calcium oxide (CaO) sorbent for capturing CO{sub 2} in the presence of SO{sub 2} was investigated. Three main sets of experiments were carried out to study carbonation and sulfation both separately and simultaneously using a thermogravimetric analyzer (TGA). The results show that SO{sub 2} reduced the capability of the sorbents for capturing CO{sub 2} because of the competition between carbonation and sulfation reactions. Formation of calcium carbonate (CaCO{sub 3}) and calcium sulfate (CaSO{sub 4}) took place upon carbonation and sulfation, respectively. Our TGA and X-ray photoelectron spectroscopy (XPS) results indicate that the carbonation is totally reversible, while this is not the case with the sulfation. The permanent residual weight gained by the sorbents during the course of sulfation is attributed to the irreversible formation of sulfate species, which is confirmed by both the TGA and XPS results. The Ce promoted CaO sorbent exhibits the best performance for CO{sub 2} capture and is the most SO{sub 2} tolerant sorbent. On the other hand, the Mn doped dopant has the strongest affinity for SO{sub 2}.

  13. Effects of co-dopants on the magnetic properties of Ni–Zn ferrites

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Sea-Fue, E-mail: sfwang@ntut.edu.tw; Hsu, Yung-Fu; Chou, Kai-Mou; Tsai, Jeng-Ting

    2015-01-15

    In this study, substitution of co-dopants into the Ni{sub 0.4}Zn{sub 0.6}Fe{sub 2}O{sub 4} ceramic was performed. Al{sup 3+}, Sn{sup 4+} and Ti{sup 4+} ions were added to the Ni{sub 0.4}Zn{sub 0.4}Li{sub 0.10}Fe{sub 2.10}O{sub 4} ceramic to improve magnetic properties. After sintering, all samples were indexed on a spinel structure and no detectable second phase was observed. When the concentration of dopants increased, the grain size of the Ni–Zn ferrites increased from 1.40 to 6.05 μm and the saturation magnetization declined from 428.8 emu/cm{sup 3} to 374.0 emu/cm{sup 3}. Amongst the systems investigated, the Ni{sub 0.4}Zn{sub 0.4}Li{sub 0.10}Al{sub 0.050}Fe{sub 2.050}O{sub 4}, Ni{sub 0.4}Zn{sub 0.425}Li{sub 0.10}Ti{sub 0.025}Fe{sub 2.050}O{sub 4}, and Ni{sub 0.4}Zn{sub 0.450}Li{sub 0.10}Ti{sub 0.050}Fe{sub 2.000}O{sub 4} ceramics revealed promising magnetic properties for applications. The measured initial permeability and quality factor were respectively 291.9 and 45.1 for the Ni{sub 0.4}Zn{sub 0.4}Li{sub 0.10}Al{sub 0.050}Fe{sub 2.050}O{sub 4} ceramic, 316.9 and 42.5 for the Ni{sub 0.4}Zn{sub 0.425}Li{sub 0.10}Ti{sub 0.025}Fe{sub 2.050}O{sub 4} ceramic, 429.4 and 34.8 for the Ni{sub 0.4}Zn{sub 0.450}Li{sub 0.10}Ti{sub 0.050}Fe{sub 2.000}O{sub 4} ceramic. The high initial permeability and quality factor values associated with good electrical resistivity (>10{sup 6} Ω-cm) qualify the ceramics for high frequency applications. - Highlights: • Co-dopants Al{sup 3+}–Li{sup +}, Sn{sup 4+}–Li{sup +}, and Ti{sup 4}–Li{sup +} were substituted into Ni–Zn lattices. • Grain size of Ni–Zn ferrites grew from 1.40 to 6.05 μm with rising dopants content. • Saturation magnetization declined from 428.8 to 374.0 emu/cm{sup 3} with adding dopants. • Ni{sub 0.4}Zn{sub 0.4}Li{sub 0.10}Al{sub 0.050}Fe{sub 2.050}O{sub 4} ceramic showed an μ{sub i} of 291.9 and a Q{sub f} of 45.1.

  14. Effects of Oxidation on Oxidation-Resistant Graphite

    Energy Technology Data Exchange (ETDEWEB)

    Windes, William [Idaho National Lab. (INL), Idaho Falls, ID (United States); Smith, Rebecca [Idaho National Lab. (INL), Idaho Falls, ID (United States); Carroll, Mark [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2015-05-01

    The Advanced Reactor Technology (ART) Graphite Research and Development Program is investigating doped nuclear graphite grades that exhibit oxidation resistance through the formation of protective oxides on the surface of the graphite material. In the unlikely event of an oxygen ingress accident, graphite components within the VHTR core region are anticipated to oxidize so long as the oxygen continues to enter the hot core region and the core temperatures remain above 400°C. For the most serious air-ingress accident which persists over several hours or days the continued oxidation can result in significant structural damage to the core. Reducing the oxidation rate of the graphite core material during any air-ingress accident would mitigate the structural effects and keep the core intact. Previous air oxidation testing of nuclear-grade graphite doped with varying levels of boron-carbide (B4C) at a nominal 739°C was conducted for a limited number of doped specimens demonstrating a dramatic reduction in oxidation rate for the boronated graphite grade. This report summarizes the conclusions from this small scoping study by determining the effects of oxidation on the mechanical strength resulting from oxidation of boronated and unboronated graphite to a 10% mass loss level. While the B4C additive did reduce mechanical strength loss during oxidation, adding B4C dopants to a level of 3.5% or more reduced the as-fabricated compressive strength nearly 50%. This effectively minimized any benefits realized from the protective film formed on the boronated grades. Future work to infuse different graphite grades with silicon- and boron-doped material as a post-machining conditioning step for nuclear components is discussed as a potential solution for these challenges in this report.

  15. Dopant Adsorption and Incorporation at Irradiated GaN Surfaces

    Science.gov (United States)

    Sun, Qiang; Selloni, Annabella; Myers, Thomas; Doolittle, W. Alan

    2006-03-01

    Mg and O are two of the common dopants in GaN, but, in spite of extensive investigation, the atomic scale understanding of their adsorption and incorporation is still incomplete. In particular, high-energy electron irradiation, such as occurring during RHEED, has been reported to have an important effect on the incorporation of these impurities, but no study has addressed the detailed mechanisms of this effect yet. Here we use DFT calculations to study the adsorption and incorporation of Mg and O at the Ga- and N-polar GaN surfaces under various Ga, Mg and O coverage conditions as well as in presence of light or electron beam-induced electronic excitation. We find that the adsorption and incorporation of the two impurities have opposite surface polarity dependence: substitutional Mg prefers to incorporate at the GaN(0001) surface, while O prefers to adsorb and incorporate at the N-polar surface. In addition, our results indicate that in presence of light irradiation the tendency of Mg to surface-segregate is reduced. The O adsorption energy on the N-polar surface is also significantly reduced, consistent with the experimental observation of a much smaller concentration of oxygen in the irradiated samples.

  16. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

    Science.gov (United States)

    Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

    2016-04-27

    The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

  17. Powder stickiness in milk drying: uncertainty and sensitivity analysis for process understanding

    DEFF Research Database (Denmark)

    Ferrari, Adrián; Gutiérrez, Soledad; Sin, Gürkan

    2017-01-01

    A powder stickiness model based in the glass transition temperature (Gordon – Taylor equations) was built for a production scale milk drying process (including a spray chamber, and internal/external fluid beds). To help process understanding, the model was subjected to sensitivity analysis (SA...... for nonlinear error propagation was selected as the main UA approach. SA results show an important local sensitivity on the spray dryer, but at the end of the internal fluid bed (critical point for stickiness) minor local sensitivities were observed. Feed concentrate moisture was found as the input with major...... global sensitivity on the glass transition temperature at the critical point, so it could represent a key variable for helping on stickiness control. UA results show the major model predictions uncertainty on the spray dryer, but it does not represent a stickiness issue since the product...

  18. Analysis of the dopant distribution in Co-deposited organic thin films by scanning transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Paredes, Yolanda A. [Center of Nanotechnology and Nanoscience, Universidad de las Fuerzas Armadas ESPE, Sangolqui 171-5-31B (Ecuador); Campos, Andrea P.C.; Achete, Carlos A. [DIMAT—INMETRO, Xerém, Duque de Caxias, RJ 25250-020 (Brazil); Cremona, Marco [DIMAT—INMETRO, Xerém, Duque de Caxias, RJ 25250-020 (Brazil); Department of Physics, Pontifícia Universidade Católica do Rio de Janeiro, PUC-Rio, Rio de Janeiro, RJ 22453-970 (Brazil)

    2015-12-01

    Organic light-emitting diodes using phosphorescent dyes (PHOLEDs) have excellent performance, with internal quantum efficiencies approaching 100%. To maximize their performance, PHOLED devices use a conductive organic host material with a sufficiently dispersed phosphorescent guest to avoid concentration quenching. Fac-tris(2-phenylpyridine) iridium, [Ir(ppy){sub 3}] is one of the most widely used green phosphorescent organic compounds. In this work, we used scanning transmission electron microscopy (STEM) equipped with HAADF (high-angle annular dark-field) and EDS (energy dispersive X-ray spectroscopy) detectors to analyze the distribution of the [Ir(ppy){sub 3}] concentration in the host material. This analysis technique, employed for the first time in co-deposited organic thin films, can simultaneously obtain an image and its respective chemical information, allowing for definitive characterization of the distribution and morphology of [Ir(ppy){sub 3}]. The technique was also used to analyze the effect of the vibration of the substrate during thermal co-deposition of the [Ir(ppy){sub 3}] molecules into an organic matrix. - Highlights: • We present a methodology to analyze the dopant distribution in organic thin films. • The method combines HAADF-STEM imaging and EDS X-ray spectroscopy. • Ir(ppy){sub 3} dopant was co-deposited into Spiro2-CBP organic matrix. • The dopant was co-deposited with and without substrate vibration. • Images and chemical information of the dopant were simultaneously obtained.

  19. Functionally Graded Thermoelectric Material though One Step Band Gap and Dopant Engineering

    DEFF Research Database (Denmark)

    Jensen, Ellen Marie; Borup, Kasper Andersen; Cederkrantz, Daniel

    , and dopant concentration. Parameters relevant to the thermoelectric properties have been determined along the pulling direction. All of these properties exhibit the wanted gradient. It has thereby been shown that engineering of the electrical contributions to the thermoelectric properties of a material...

  20. Accuracy of dielectric-dependent hybrid functionals in the prediction of optoelectronic properties of metal oxide semiconductors: a comprehensive comparison with many-body GW and experiments

    Science.gov (United States)

    Gerosa, M.; E Bottani, C.; Di Valentin, C.; Onida, G.; Pacchioni, G.

    2018-01-01

    Understanding the electronic structure of metal oxide semiconductors is crucial to their numerous technological applications, such as photoelectrochemical water splitting and solar cells. The needed experimental and theoretical knowledge goes beyond that of pristine bulk crystals, and must include the effects of surfaces and interfaces, as well as those due to the presence of intrinsic defects (e.g. oxygen vacancies), or dopants for band engineering. In this review, we present an account of the recent efforts in predicting and understanding the optoelectronic properties of oxides using ab initio theoretical methods. In particular, we discuss the performance of recently developed dielectric-dependent hybrid functionals, providing a comparison against the results of many-body GW calculations, including G 0 W 0 as well as more refined approaches, such as quasiparticle self-consistent GW. We summarize results in the recent literature for the band gap, the band level alignment at surfaces, and optical transition energies in defective oxides, including wide gap oxide semiconductors and transition metal oxides. Correlated transition metal oxides are also discussed. For each method, we describe successes and drawbacks, emphasizing the challenges faced by the development of improved theoretical approaches. The theoretical section is preceded by a critical overview of the main experimental techniques needed to characterize the optoelectronic properties of semiconductors, including absorption and reflection spectroscopy, photoemission, and scanning tunneling spectroscopy (STS).

  1. Two dimensional dopant diffusion study by scanning capacitance microscopy and TSUPREM IV process simulation

    International Nuclear Information System (INIS)

    Kim, J.; McMurray, J. S.; Williams, C. C.; Slinkman, J.

    1998-01-01

    We report the results of a 2-step two-dimensional (2D) diffusion study by Scanning Capacitance Microscopy (SCM) and 2D TSUPREM IV process simulation. A quantitative 2D dopant profile of gate-like structures consisting heavily implanted n+ regions separated by a lighter doped n-type region underneath 0.56 μm gates is measured with the SCM. The SCM is operated in the constant-change-in-capacitance mode. The 2-D SCM data is converted to dopant density through a physical model of the SCM/silicon interaction. This profile has been directly compared with 2D TSUPREM IV process simulation and used to calibrate the simulation parameters. The sample is then further subjected to an additional diffusion in a furnace for 80 minutes at 1000C. The SCM measurement is repeated on the diffused sample. This final 2D dopant profile is compared with a TSUPREM IV process simulation tuned to fit the earlier profile with no change in the parameters except the temperature and time for the additional diffusion. Our results indicate that there is still a significant disagreement between the two profiles in the lateral direction. TSUPREM IV simulation considerably underestimates the diffusion under the gate region

  2. Understanding the defect structure of solution grown zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

    2012-05-15

    Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

  3. Simple and sensitive fluorescence assay of restriction endonuclease on graphene oxide

    International Nuclear Information System (INIS)

    Gang, Jong Back

    2015-01-01

    Restriction endonucleases hydrolyze internal phosphodiester bonds at specific sites in a DNA sequence. These enzymes are essential in a variety of fields, such as biotechnology and clinical diagnostics. It is of great importance and necessity for the scientific and biomedical use of enzymes to measure endonuclease activity. In this study, graphene oxide (GO) has been used as a platform to measure enzyme activity with high sensitivity. To increase the detection sensitivity of Hinf I, the endonuclease-digested reaction was treated with exonuclease III (Exo III) and a fluorescence assay was conducted to measure the emission. Results showed that Exo III treatment enhanced 2.7-fold signal-to-background ratio for the detection of Hinf I compared with that done without Exo III in the presence of GO

  4. Two opposite hysteresis curves in semiconductors with mobile dopants

    OpenAIRE

    Lee, Jae Sung; Lee, Shin Buhm; Kahng, Byungnam; Noh, Tae Won

    2012-01-01

    Recent experimental researches on semiconductors with mobile dopants (SMD) have reported unconventional hysteretic current-voltage (I-V) curves, which form dynamically in either one of the two opposite directions, the counter-figure-eight and figure-eight ways. However the fundamental theory for the formation of the two directions is still absent, and this poses a major barrier for researches oriented to applications. Here, we introduce a theoretical model to explain the origin of the two dir...

  5. Effect of nitric oxide and hydrogen sulfide on radiation sensitivity of spores of Bacillus megaterium in suspension

    Energy Technology Data Exchange (ETDEWEB)

    Russell, C

    1966-01-01

    The effect of nitric oxide on the sensitivity to radiation of spores of B. megaterium in water suspension is similar to that seen in vegetative cells of E. coli. The spores are less sensitive in the presence of hydrogen sulfide. 11 references, 1 figure.

  6. Fibrous flexible solid-type dye-sensitized solar cells without transparent conducting oxide

    International Nuclear Information System (INIS)

    Fan Xing; Chu Zengze; Chen Lin; Zhang Chao; Wang Fuzhi; Tang Yanwei; Sun Jianliang; Zou Dechun

    2008-01-01

    We have explored a type of all-solid fibrous flexible dye-sensitized solar cells without transparent conducting oxide based on a CuI electrolyte. The working electrode's substrate is a metal wire. Cu wire counterelectrode is twisted with the dye-sensitized and CuI-coated working electrode. The cell's apparent diameter is about 150 μm. The cell's current-voltage output depends little on the incident angle of light. A 4-cm-long fibrous cell's open-circuit voltage and short-circuit current generate 304 mV and 0.032 mA, respectively. The interfacial interaction between the two electrodes has a significant influence on the inner charge transfer of the cell

  7. Dopant effects on charge transport to enhance performance of phosphorescent white organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge, E-mail: mdg1014@ciac.ac.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, University of Chinese Academy of Sciences, Changchun 130022 (China)

    2015-11-07

    We compared the performance of phosphorescent white organic light emitting diodes (WOLEDs) with red-blue-green and green-blue-red sequent emissive layers. It was found that the influence of red and green dopants on electron and hole transport in emissive layers leads to the large difference in the efficiency of fabricated WOLEDs. This improvement mechanism is well investigated by the current density-voltage characteristics of single-carrier devices based on dopant doped emissive layers and the comparison of electroluminescent and photoluminescence spectra, and attributed to the different change of charge carrier transport by the dopants. The optimized device achieves a maximum power efficiency, current efficiency, and external quantum efficiency of 37.0 lm/W, 38.7 cd/A, and 17.7%, respectively, which are only reduced to 32.8 lm/W, 38.5 cd/A, and 17.3% at 1000 cd/m{sup 2} luminance. The critical current density is as high as 210 mA/cm{sup 2}. It can be seen that the efficiency roll-off in phosphorescent WOLEDs can be well improved by effectively designing the structure of emissive layers.

  8. Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO3

    Directory of Open Access Journals (Sweden)

    Useong Kim

    2014-05-01

    Full Text Available We studied the conduction mechanism in Sb-doped BaSnO3 epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO3. We found that the electron mobility in BaSnO3 films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO3 system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO3 films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

  9. A reliable method for the counting and control of single ions for single-dopant controlled devices

    International Nuclear Information System (INIS)

    Shinada, T; Kurosawa, T; Nakayama, H; Zhu, Y; Hori, M; Ohdomari, I

    2008-01-01

    By 2016, transistor device size will be just 10 nm. However, a transistor that is doped at a typical concentration of 10 18 atoms cm -3 has only one dopant atom in the active channel region. Therefore, it can be predicted that conventional doping methods such as ion implantation and thermal diffusion will not be available ten years from now. We have been developing a single-ion implantation (SII) method that enables us to implant dopant ions one-by-one into semiconductors until the desired number is reached. Here we report a simple but reliable method to control the number of single-dopant atoms by detecting the change in drain current induced by single-ion implantation. The drain current decreases in a stepwise fashion as a result of the clusters of displaced Si atoms created by every single-ion incidence. This result indicates that the single-ion detection method we have developed is capable of detecting single-ion incidence with 100% efficiency. Our method potentially could pave the way to future single-atom devices, including a solid-state quantum computer

  10. Chemical and Electrochemical Synthesis of Polypyrrole Using Carrageenan as a Dopant: Polypyrrole/Multi-Walled Carbon Nanotube Nanocomposites

    Directory of Open Access Journals (Sweden)

    Mostafizur Rahaman

    2018-06-01

    Full Text Available In this article, iota-carrageenan (IC and kappa-carrageenan (KC are used as dopants for the chemical and electrochemical synthesis of polypyrrole (PPy. The composites of chemically synthesized PPy with multi-walled carbon nanotubes (MWNTs were prepared using an in situ technique. Both the dialyzed and non-dialyzed IC and KC were used as dopants for electrochemical polymerization of pyrrole. Chemically synthesized PPy and PPy/MWNTs composites were studied by ultraviolet visible (UV-vis absorption spectra to investigate the effect of the concentration and the incorporation of MWNTs. In addition, the electrical, thermal, mechanical, and microscopic characterizations of these films were performed to examine the effect of the dopants and MWNTs on these properties, along with their surface morphology. The films of electrochemically polymerized PPy were characterized using UV-vis absorption spectra, scanning electron microscopy, and cyclic voltammetry (CV. The results were then compared with the chemical polymerized PPy.

  11. Terbium(III) ions as sensitizers of oxidation of indole and its derivatives in Fenton system

    Energy Technology Data Exchange (ETDEWEB)

    Kaczmarek, Małgorzata, E-mail: mkaczmar@amu.edu.pl; Staninski, Krzysztof

    2017-03-15

    Oxidation of indole and its derivatives in the Fenton system as a source of oxidising agents, in the presence of terbium(III) ions was studied by chemiluminescence methods to get the kinetic curves of emission decay and spectral distributions of chemiluminescence. Terbium(III) ions acted as a sensitizer of the mixtures Tb(III)-Fe(II)/Fe(III)-H{sub 2}O{sub 2}-indole or its derivative (tryptophan, tryptamine, indole-3-acetic acid and indole-3-acetyl aspartic acid). For the above indolic compounds, linear dependencies of integrated intensity of chemiluminescence on concentration of indolic compound in water and in water-acetonitrile solution were obtained. The limits of detection (LOD) and quantification (LOQ) of the indolic compounds studied were found to be by one or two orders of magnitude lower in the system with terbium(III) ions than without them. - Highlights: • Chemiluminescence emitted on oxidation of indolic compounds in Fenton system. • Tb (III) ions as sensitizers of indolic compounds oxidation in solutions. • Linear relations between CL intensity and indolic compound concentration.

  12. Coordinated balancing of muscle oxidative metabolism through PGC-1{alpha} increases metabolic flexibility and preserves insulin sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Summermatter, Serge [Biozentrum, Division of Pharmacology/Neurobiology, University of Basel, Klingelbergstrasse 50-70, CH-4056 Basel (Switzerland); Troxler, Heinz [Division of Clinical Chemistry and Biochemistry, Department of Pediatrics, University Children' s Hospital, University of Zurich, Steinwiesstrasse 75, CH-8032 Zurich (Switzerland); Santos, Gesa [Biozentrum, Division of Pharmacology/Neurobiology, University of Basel, Klingelbergstrasse 50-70, CH-4056 Basel (Switzerland); Handschin, Christoph, E-mail: christoph.handschin@unibas.ch [Biozentrum, Division of Pharmacology/Neurobiology, University of Basel, Klingelbergstrasse 50-70, CH-4056 Basel (Switzerland)

    2011-04-29

    Highlights: {yields} PGC-1{alpha} enhances muscle oxidative capacity. {yields} PGC-1{alpha} promotes concomitantly positive and negative regulators of lipid oxidation. {yields} Regulator abundance enhances metabolic flexibility and balances oxidative metabolism. {yields} Balanced oxidation prevents detrimental acylcarnitine and ROS generation. {yields} Absence of detrimental metabolites preserves insulin sensitivity -- Abstract: The peroxisome proliferator-activated receptor {gamma} coactivator 1{alpha} (PGC-1{alpha}) enhances oxidative metabolism in skeletal muscle. Excessive lipid oxidation and electron transport chain activity can, however, lead to the accumulation of harmful metabolites and impair glucose homeostasis. Here, we investigated the effect of over-expression of PGC-1{alpha} on metabolic control and generation of insulin desensitizing agents in extensor digitorum longus (EDL), a muscle that exhibits low levels of PGC-1{alpha} in the untrained state and minimally relies on oxidative metabolism. We demonstrate that PGC-1{alpha} induces a strictly balanced substrate oxidation in EDL by concomitantly promoting the transcription of activators and inhibitors of lipid oxidation. Moreover, we show that PGC-1{alpha} enhances the potential to uncouple oxidative phosphorylation. Thereby, PGC-1{alpha} boosts elevated, yet tightly regulated oxidative metabolism devoid of side products that are detrimental for glucose homeostasis. Accordingly, PI3K activity, an early phase marker for insulin resistance, is preserved in EDL muscle. Our findings suggest that PGC-1{alpha} coordinately coactivates the simultaneous transcription of gene clusters implicated in the positive and negative regulation of oxidative metabolism and thereby increases metabolic flexibility. Thus, in mice fed a normal chow diet, over-expression of PGC-1{alpha} does not alter insulin sensitivity and the metabolic adaptations elicited by PGC-1{alpha} mimic the beneficial effects of endurance training

  13. Coordinated balancing of muscle oxidative metabolism through PGC-1α increases metabolic flexibility and preserves insulin sensitivity

    International Nuclear Information System (INIS)

    Summermatter, Serge; Troxler, Heinz; Santos, Gesa; Handschin, Christoph

    2011-01-01

    Highlights: → PGC-1α enhances muscle oxidative capacity. → PGC-1α promotes concomitantly positive and negative regulators of lipid oxidation. → Regulator abundance enhances metabolic flexibility and balances oxidative metabolism. → Balanced oxidation prevents detrimental acylcarnitine and ROS generation. → Absence of detrimental metabolites preserves insulin sensitivity -- Abstract: The peroxisome proliferator-activated receptor γ coactivator 1α (PGC-1α) enhances oxidative metabolism in skeletal muscle. Excessive lipid oxidation and electron transport chain activity can, however, lead to the accumulation of harmful metabolites and impair glucose homeostasis. Here, we investigated the effect of over-expression of PGC-1α on metabolic control and generation of insulin desensitizing agents in extensor digitorum longus (EDL), a muscle that exhibits low levels of PGC-1α in the untrained state and minimally relies on oxidative metabolism. We demonstrate that PGC-1α induces a strictly balanced substrate oxidation in EDL by concomitantly promoting the transcription of activators and inhibitors of lipid oxidation. Moreover, we show that PGC-1α enhances the potential to uncouple oxidative phosphorylation. Thereby, PGC-1α boosts elevated, yet tightly regulated oxidative metabolism devoid of side products that are detrimental for glucose homeostasis. Accordingly, PI3K activity, an early phase marker for insulin resistance, is preserved in EDL muscle. Our findings suggest that PGC-1α coordinately coactivates the simultaneous transcription of gene clusters implicated in the positive and negative regulation of oxidative metabolism and thereby increases metabolic flexibility. Thus, in mice fed a normal chow diet, over-expression of PGC-1α does not alter insulin sensitivity and the metabolic adaptations elicited by PGC-1α mimic the beneficial effects of endurance training on muscle metabolism in this context.

  14. Thermoluminescence glow curve for UV induced ZrO2:Ti phosphor with variable concentration of dopant and various heating rate

    Directory of Open Access Journals (Sweden)

    Neha Tiwari

    2014-10-01

    prepared phosphor with optimized concentration of dopant was studied for various heating rate method. The various heating rate (3 °C s−1 to 5 °C s−1 shows shifting in TL glow peaks at higher temperature side. That is opposite behaviour shows in TL glow curve with various heating rate method. The presence of transition metal ions changes (Ti the TL glow curve structure either enhancing or quenching the TL efficiency. These changes are a consequence of the crystalline field perturbation due to the different characteristics of the dopant ions which supposedly replaces the Zr4+ sites. The traps and the glow curve structure are also dependent upon the morphology of the surface area which in turn depends on the nanocrystallite size. The nanocrystallite size depends also on the dopant ion. Furthermore, the obtained experimental results show that the presence of dopant ions also modifies the TL recombination efficiency which was found to be different for each irradiation type and the specific exposed material. It is important to notice that using the right dopant concentration, it is possible to maximize the TL efficiency and improve sensitivity and dose linearity for a specific irradiation type. For dual TL glow curve present in the sample it is very difficult to calculate the kinetic parameters from peak shape method. The kinetic parameters are calculated by (Computerized glow curve convolution technique CGCD technique.

  15. Microarray study of temperature-dependent sensitivity and selectivity of metal/oxide sensing interfaces

    Science.gov (United States)

    Tiffany, Jason; Cavicchi, Richard E.; Semancik, Stephen

    2001-02-01

    Conductometric gas microsensors offer the benefits of ppm-level sensitivity, real-time data, simple interfacing to electronics hardware, and low power consumption. The type of device we have been exploring consists of a sensor film deposited on a "microhotplate"- a 100 micron platform with built-in heating (to activate reactions on the sensing surface) and thermometry. We have been using combinatorial studies of 36-element arrays to characterize the relationship between sensor film composition, operating temperature, and response, as measured by the device's sensitivity and selectivity. Gases that have been tested on these arrays include methanol, ethanol, dichloromethane, propane, methane, acetone, benzene, hydrogen, and carbon monoxide, and are of interest in the management of environmental waste sites. These experiments compare tin oxide films modified by catalyst overlayers, and ultrathin metal seed layers. The seed layers are used as part of a chemical vapor deposition process that uses each array element's microheater to activate the deposition of SnO2, and control its microstructure. Low coverage (20 Ê) catalytic metals (Pd, Cu, Cr, In, Au) are deposited on the oxides by masked evaporation or sputtering. This presentation demonstrates the value of an array-based approach for developing film processing methods, measuring performance characteristics, and establishing reproducibility. It also illustrates how temperature-dependent response data for varied metal/oxide compositions can be used to tailor a microsensor array for a given application.

  16. High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

    International Nuclear Information System (INIS)

    Huang Wei; Lu Chao; Yu Jue; Wei Jiang-Bin; Chen Chao-Wen; Wang Jian-Yuan; Xu Jian-Fang; Li Cheng; Chen Song-Yan; Lai Hong-Kai; Wang Chen; Liu Chun-Li

    2016-01-01

    High-performance Ge n + /p junctions were fabricated at a low formation temperature from 325 °C to 400 °C with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n + /p junction has a rectification ratio of 5.6× 10 4 and a forward current of 387 A/cm 2 at −1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET. (paper)

  17. The defect chemistry of nitrogen in oxides: A review of experimental and theoretical studies

    International Nuclear Information System (INIS)

    Polfus, Jonathan M.; Norby, Truls; Haugsrud, Reidar

    2013-01-01

    Incorporation of nitrogen into oxides has in recent years received increased attention as a variable for tuning their functional properties. A vast number of reports have been devoted to improving the photocatalytic properties of TiO 2 , p-type charge carrier concentration in ZnO and the ionic transport properties of ZrO 2 by nitrogen doping. In comparison, the fundamentals of the nitrogen related defect chemistry for a wider range of oxides have been less focused upon. In the present contribution, we review experimental and computational investigations of the nitrogen related defect chemistry of insulating and semiconducting oxides. The interaction between nitrogen and protons is important and emphasized. Specifically, the stability of nitrogen defects such as N O / , NH O × and (NH 2 ) O • is evaluated under various conditions and their atomistic and electronic structure is presented. A final discussion is devoted to the role of nitrogen with respect to transport properties and photocatalytic activity of oxides. - Graphical abstract: Experimental and theoretical investigations of the nitrogen related defect chemistry of a range of wide band gap oxides is reviewed. The interaction between nitrogen dopants and protons is emphasized and described through the atomistic and electronic structure as well as defect chemical processes involving NH and NH 2 defects. Consequently, the physical properties of oxides containing such species are discussed with respect to e.g., diffusion and photocatalytic properties. Highlights: ► Experimental and theoretical investigations of the nitrogen and hydrogen related defect chemistry of wide band gap oxides is reviewed. ► The interaction between nitrogen dopants and protons is important and emphasized. ► Diffusion and photocatalytic properties of N-doped oxides are discussed.

  18. Effect of rare earth dopants on structural and mechanical properties of nanoceria synthesized by combustion method

    International Nuclear Information System (INIS)

    Akbari-Fakhrabadi, A.; Meruane, V.; Jamshidijam, M.; Gracia-Pinilla, M.A.; Mangalaraja, R.V.

    2016-01-01

    Structural characteristics of combustion synthesized, calcined and densified pure and doped nanoceria with tri-valent cations of Er, Y, Gd, Sm and Nd were analyzed by X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM). The results showed that the as-synthesized and calcined nanopowders were mesoporous and calculated lattice parameters were close to theoretical ion-packing model. The effect of dopants on elastic modulus, microhardness and fracture toughness of sintered pure and doped ceria were investigated. It was observed that tri-valent cation dopants increased the hardness of the ceria, whereas the fracture toughness and elastic modulus were decreased.

  19. Surfactant-assisted ultrasonic spray pyrolysis of nickel oxide and lithium-doped nickel oxide thin films, toward electrochromic applications

    Energy Technology Data Exchange (ETDEWEB)

    Denayer, Jessica [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Bister, Geoffroy [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Simonis, Priscilla [Laboratory LPS, University of Namur, rue de bruxelles 61, 5000 Namur (Belgium); Colson, Pierre; Maho, Anthony [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Aubry, Philippe [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Vertruyen, Bénédicte [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Henrist, Catherine, E-mail: catherine.henrist@ulg.ac.be [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium); Lardot, Véronique; Cambier, Francis [Environmental and Material Research Association (CRIBC-INISMa), avenue gouverneur cornez 4, 7000 Mons (Belgium); Cloots, Rudi [Group of Research in Energy and Environment for MATerials (GREENMAT), University of Liège, allée de la chimie 3, 4000 Liège (Belgium)

    2014-12-01

    Highlights: • Surfactant-assisted USP: a novel and low cost process to obtain high quality nickel oxide films, with or without lithium dopant. • Increased uniformity and reduced light scattering thanks to the addition of a surfactant. • Improved electrochromic performance (coloration efficiency and contrast) for lithium-doped films by comparison with the undoped NiO film. - Abstract: Lithium-doped nickel oxide and undoped nickel oxide thin films have been deposited on FTO/glass substrates by a surfactant-assisted ultrasonic spray pyrolysis. The addition of polyethylene glycol in the sprayed solution has led to improved uniformity and reduced light scattering compared to films made without surfactant. Furthermore, the presence of lithium ions in NiO films has resulted in improved electrochromic performances (coloration contrast and efficiency), but with a slight decrease of the electrochromic switching kinetics.

  20. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    Energy Technology Data Exchange (ETDEWEB)

    Tripathy, Sumanta K.; Rajeswari, V. P. [Centre for Nano Science and Technology, GVP College of Engineering (Autonomous), Visakhapatnam- 530048 (India)

    2014-01-28

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.

  1. Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

    International Nuclear Information System (INIS)

    Tripathy, Sumanta K.; Rajeswari, V. P.

    2014-01-01

    Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn 3 O 4 , corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating the absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells

  2. Linear and nonlinear magneto-optical properties of an off-center single dopant in a spherical core/shell quantum dot

    Science.gov (United States)

    Feddi, E.; Talbi, A.; Mora-Ramos, M. E.; El Haouari, M.; Dujardin, F.; Duque, C. A.

    2017-11-01

    Using the effective mass approximation and a variational procedure, we have investigated the nonlinear optical absorption coefficient and the relative refractive index changes associated to a single dopant confined in core/shell quantum dots considering the influences of the core/shell dimensions, externally applied magnetic field, and dielectric mismatch. The results show that the optical absorption coefficient and the coefficients of relative refractive index change depend strongly on the core/shell sizes and they are blue shifted when the spatial confinement increases so this effect is magnified by higher structural dimensions. Additionally, it is obtained that both studied optical properties are sensitive to the dielectric environment in such a way that their amplitudes are very affected by the local field corrections.

  3. n-Dopants Based on Dimers of Benzimidazoline Radicals: Structures and Mechanism of Redox Reactions.

    Science.gov (United States)

    Zhang, Siyuan; Naab, Benjamin D; Jucov, Evgheni V; Parkin, Sean; Evans, Eric G B; Millhauser, Glenn L; Timofeeva, Tatiana V; Risko, Chad; Brédas, Jean-Luc; Bao, Zhenan; Barlow, Stephen; Marder, Seth R

    2015-07-20

    Dimers of 2-substituted N,N'-dimethylbenzimidazoline radicals, (2-Y-DMBI)2 (Y=cyclohexyl (Cyc), ferrocenyl (Fc), ruthenocenyl (Rc)), have recently been reported as n-dopants for organic semiconductors. Here their structural and energetic characteristics are reported, along with the mechanisms by which they react with acceptors, A (PCBM, TIPS-pentacene), in solution. X-ray data and DFT calculations both indicate a longer C-C bond for (2-Cyc-DMBI)2 than (2-Fc-DMBI)2 , yet DFT and ESR data show that the latter dissociates more readily due to stabilization of the radical by Fc. Depending on the energetics of dimer (D2 ) dissociation and of D2 -to-A electron transfer, D2 reacts with A to form D(+) and A(-) by either of two mechanisms, differing in whether the first step is endergonic dissociation or endergonic electron transfer. However, the D(+) /0.5 D2 redox potentials-the effective reducing strengths of the dimers-vary little within the series (ca. -1.9 V vs. FeCp2 (+/0) ) (Cp=cyclopentadienyl) due to cancelation of trends in the D(+/0) potential and D2 dissociation energy. The implications of these findings for use of these dimers as n-dopants, and for future dopant design, are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. n-Dopants Based on Dimers of Benzimidazoline Radicals: Structures and Mechanism of Redox Reactions

    KAUST Repository

    Zhang, Siyuan

    2015-06-18

    Dimers of 2-substituted N,N\\'-dimethylbenzimidazoline radicals, (2-Y-DMBI)2 (Y=cyclohexyl (Cyc), ferrocenyl (Fc), ruthenocenyl (Rc)), have recently been reported as n-dopants for organic semiconductors. Here their structural and energetic characteristics are reported, along with the mechanisms by which they react with acceptors, A (PCBM, TIPS-pentacene), in solution. X-ray data and DFT calculations both indicate a longer C-C bond for (2-Cyc-DMBI)2 than (2-Fc-DMBI)2, yet DFT and ESR data show that the latter dissociates more readily due to stabilization of the radical by Fc. Depending on the energetics of dimer (D2) dissociation and of D2-to-A electron transfer, D2 reacts with A to form D+ and A- by either of two mechanisms, differing in whether the first step is endergonic dissociation or endergonic electron transfer. However, the D+/0.5D2 redox potentials-the effective reducing strengths of the dimers-vary little within the series (ca. -1.9V vs. FeCp2+/0) (Cp=cyclopentadienyl) due to cancelation of trends in the D+/0 potential and D2 dissociation energy. The implications of these findings for use of these dimers as n-dopants, and for future dopant design, are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. n-Dopants Based on Dimers of Benzimidazoline Radicals: Structures and Mechanism of Redox Reactions

    KAUST Repository

    Zhang, Siyuan; Naab, Benjamin D.; Jucov, Evgheni V.; Parkin, Sean; Evans, Eric G B; Millhauser, Glenn L.; Timofeeva, Tatiana V.; Risko, Chad; Bredas, Jean-Luc; Bao, Zhenan; Barlow, Stephen; Marder, Seth R.

    2015-01-01

    Dimers of 2-substituted N,N'-dimethylbenzimidazoline radicals, (2-Y-DMBI)2 (Y=cyclohexyl (Cyc), ferrocenyl (Fc), ruthenocenyl (Rc)), have recently been reported as n-dopants for organic semiconductors. Here their structural and energetic characteristics are reported, along with the mechanisms by which they react with acceptors, A (PCBM, TIPS-pentacene), in solution. X-ray data and DFT calculations both indicate a longer C-C bond for (2-Cyc-DMBI)2 than (2-Fc-DMBI)2, yet DFT and ESR data show that the latter dissociates more readily due to stabilization of the radical by Fc. Depending on the energetics of dimer (D2) dissociation and of D2-to-A electron transfer, D2 reacts with A to form D+ and A- by either of two mechanisms, differing in whether the first step is endergonic dissociation or endergonic electron transfer. However, the D+/0.5D2 redox potentials-the effective reducing strengths of the dimers-vary little within the series (ca. -1.9V vs. FeCp2+/0) (Cp=cyclopentadienyl) due to cancelation of trends in the D+/0 potential and D2 dissociation energy. The implications of these findings for use of these dimers as n-dopants, and for future dopant design, are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Translation Effects in Fluorine Doped Tin Oxide Thin Film Properties by Atmospheric Pressure Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    Mohammad Afzaal

    2016-10-01

    Full Text Available In this work, the impact of translation rates in fluorine doped tin oxide (FTO thin films using atmospheric pressure chemical vapour deposition (APCVD were studied. We demonstrated that by adjusting the translation speeds of the susceptor, the growth rates of the FTO films varied and hence many of the film properties were modified. X-ray powder diffraction showed an increased preferred orientation along the (200 plane at higher translation rates, although with no actual change in the particle sizes. A reduction in dopant level resulted in decreased particle sizes and a much greater degree of (200 preferred orientation. For low dopant concentration levels, atomic force microscope (AFM studies showed a reduction in roughness (and lower optical haze with increased translation rate and decreased growth rates. Electrical measurements concluded that the resistivity, carrier concentration, and mobility of films were dependent on the level of fluorine dopant, the translation rate and hence the growth rates of the deposited films.

  7. P2 Asymmetry of Au's M-band Flux and its smoothing effect due to high-Z ablator dopants

    Science.gov (United States)

    Li, Yongsheng; Zhai, Chuanlei; Ren, Guoli; Gu, Jianfa; Huo, Wenyi; Meng, Xujun; Ye, Wenhua; Lan, Ke; Zhang, Weiyan

    2017-10-01

    X-ray drive asymmetry is one of the main seeds of low-mode implosion asymmetry that blocks further improvement of the nuclear performance of ``high-foot'' experiments on the National Ignition Facility. More particularly, the P2 asymmetry of Au's M-band flux can also severely influence the implosion performance. Here we study the smoothing effect of mid- and/or high-Z dopants in ablator on M-band flux asymmetries, by modeling and comparing the implosion processes of a Ge-doped and a Si-doped ignition capsule driven by x-ray sources with asymmetric M-band flux. As the results, (1) mid- or high-Z dopants absorb M-band flux and re-emit isotropically, helping to smooth M-band flux arriving at the ablation front, therefore reducing the P2 asymmetries of the imploding shell and hot spot; (2) the smoothing effect of Ge-dopant is more remarkable than Si-dopant due to its higher opacity than the latter in Au's M-band; and (3) placing the doped layer at a larger radius in ablator is more efficient. Applying this effect may not be a main measure to reduce the low-mode implosion asymmetry, but might be of significance in some critical situations such as Inertial Confinement Fusion (ICF) experiments very near the performance cliffs of asymmetric x-ray drives.

  8. Ternary logic implemented on a single dopant atom field effect silicon transistor

    NARCIS (Netherlands)

    Klein, M.; Mol, J.A.; Verduijn, J.; Lansbergen, G.P.; Rogge, S.; Levine, R.D.; Remacle, F.

    2010-01-01

    We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through

  9. Effect of Er{sub 2}O{sub 3} dopant on electrical and optical properties of potassium sodium niobate silicate glass-ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Yongsiri, Ploypailin [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Sirisoonthorn, Somnuk [National Metal and Materials Technology Center, Pathumthani 12120 (Thailand); Pengpat, Kamonpan, E-mail: kamonpan.p@cmu.ac.th [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand)

    2015-09-15

    Highlights: • The KNN–SiO{sub 2} doped Er{sub 2}O{sub 3} glass-ceramics was prepared by incorporation method. • High dielectric constant (458.41 at 100 kHz) and low loss (0.0005) could be obtained. • TEM and SEM confirmed the existence of KNN crystals embedded in glass matrix. • The Er{sub 2}O{sub 3} dopant causes insignificant effect on modifying E{sub g} value. - Abstract: In this study, transparent glass-ceramics from potassium sodium niobate (KNN)-silicate glass system doped with erbium oxide (Er{sub 2}O{sub 3}) were successfully prepared by incorporation method. KNN was added in glass batches as heterogeneous nucleating agent. The KNN powder was mixed with SiO{sub 2} and Er{sub 2}O{sub 3} dopant with KNN and Er{sub 2}O{sub 3} content varied between 70–80 and 0.5–1.0 mol%, respectively. Each batch was subsequently melted at 1300 °C for 15 min in a platinum crucible using an electric furnace. The quenched glasses were then subjected to heat treatment at various temperatures for 4 h. XRD results showed that the prepared glass ceramics contained crystals of KNN solid solution. In contrary, dielectric constant (ϵ{sub r}) and dielectric loss (tan δ) were found to increase with increasing heat treatment temperature. Additionally, optical properties such as absorbance and energy band gap have been investigated.

  10. Effect of aluminum oxide doping on the structural, electrical, and optical properties of zinc oxide (AOZO) nanofibers synthesized by electrospinning

    International Nuclear Information System (INIS)

    Lotus, A.F.; Kang, Y.C.; Walker, J.I.; Ramsier, R.D.; Chase, G.G.

    2010-01-01

    Zinc oxide nanofibers doped with aluminum oxide were prepared by sol-gel processing and electrospinning techniques using polyvinylpyrrolidone (PVP), zinc acetate and aluminum acetate as precursors. The resulting nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy, and current-voltage (I-V) properties. The nanofibers had diameters in the range of 60-150 nm. The incorporation of aluminum oxide resulted in a decrease in the crystallite sizes of the zinc oxide nanofibers. Aluminum oxide doped zinc oxide (AOZO) nanofibers exhibited lower bandgap energies compared to undoped zinc oxide nanofibers. However, as the aluminum content (Al/(Al + Zn) x 100%) was increased from 1.70 at.% to 3.20 at.% in the electrospinning solution, the bandgap energy increased resulting in lower conductivity. The electrical conductivity of the AOZO samples was found to depend on the amount of aluminum dopant in the matrix as reflected in the changes in oxidation state elucidated from XPS data. Electrospinning was found to be a productive, simple, and easy method for tuning the bandgap energy and conductivity of zinc oxide semiconducting nanofibers.

  11. Nitric oxide is required for the insulin sensitizing effects of contraction in mouse skeletal muscle.

    Science.gov (United States)

    Zhang, Xinmei; Hiam, Danielle; Hong, Yet-Hoi; Zulli, Anthony; Hayes, Alan; Rattigan, Stephen; McConell, Glenn K

    2017-12-15

    People with insulin resistance or type 2 diabetes can substantially increase their skeletal muscle glucose uptake during exercise and insulin sensitivity after exercise. Skeletal muscle nitric oxide (NO) is important for glucose uptake during exercise, although how prior exercise increases insulin sensitivity is unclear. In the present study, we examined whether NO is necessary for normal increases in skeletal muscle insulin sensitivity after contraction ex vivo in mouse muscle. The present study uncovers, for the first time, a novel role for NO in the insulin sensitizing effects of ex vivo contraction, which is independent of blood flow. The factors regulating the increase in skeletal muscle insulin sensitivity after exercise are unclear. We examined whether nitric oxide (NO) is required for the increase in insulin sensitivity after ex vivo contractions. Isolated C57BL/6J mouse EDL muscles were contracted for 10 min or remained at rest (basal) with or without the NO synthase (NOS) inhibition (N G -monomethyl-l-arginine; l-NMMA; 100 μm). Then, 3.5 h post contraction/basal, muscles were exposed to saline or insulin (120 μU ml -1 ) with or without l-NMMA during the last 30 min. l-NMMA had no effect on basal skeletal muscle glucose uptake. The increase in muscle glucose uptake with insulin (57%) was significantly (P contraction (140% increase). NOS inhibition during the contractions had no effect on this insulin-sensitizing effect of contraction, whereas NOS inhibition during insulin prevented the increase in skeletal muscle insulin sensitivity post-contraction. Soluble guanylate cyclase inhibition, protein kinase G (PKG) inhibition or cyclic nucleotide phosphodiesterase inhibition each had no effect on the insulin-sensitizing effect of prior contraction. In conclusion, NO is required for increases in insulin sensitivity several hours after contraction of mouse skeletal muscle via a cGMP/PKG independent pathway. © 2017 The Authors. The Journal of Physiology

  12. Gas-generated thermal oxidation of a coordination cluster for an anion-doped mesoporous metal oxide.

    Science.gov (United States)

    Hirai, Kenji; Isobe, Shigehito; Sada, Kazuki

    2015-12-18

    Central in material design of metal oxides is the increase of surface area and control of intrinsic electronic and optical properties, because of potential applications for energy storage, photocatalysis and photovoltaics. Here, we disclose a facile method, inspired by geochemical process, which gives rise to mesoporous anion-doped metal oxides. As a model system, we demonstrate that simple calcination of a multinuclear coordination cluster results in synchronic chemical reactions: thermal oxidation of Ti8O10(4-aminobenzoate)12 and generation of gases including amino-group fragments. The gas generation during the thermal oxidation of Ti8O10(4-aminobenzoate)12 creates mesoporosity in TiO2. Concurrently, nitrogen atoms contained in the gases are doped into TiO2, thus leading to the formation of mesoporous N-doped TiO2. The mesoporous N-doped TiO2 can be easily synthesized by calcination of the multinuclear coordination cluster, but shows better photocatalytic activity than the one prepared by a conventional sol-gel method. Owing to an intrinsic designability of coordination compounds, this facile synthetic will be applicable to a wide range of metal oxides and anion dopants.

  13. Moessbauer-spectroscopic characterization of the local surrounding of tin dopant cations in the bulk and on the surface of YCrO{sub 3} crystallites

    Energy Technology Data Exchange (ETDEWEB)

    Afanasov, Mikhail I.; Fabritchnyi, Pavel B. [M.V. Lomonosov Moscow State Univ. (Russian Federation). Dept. of Chemistry; Wattiaux, Alain; Labrugere, Christine; Delmas, Claude [CNRS, Bordeaux Univ., Pessac (France). Inst. de Chimie de la Matiere Condensee

    2011-03-15

    {sup 119}Sn Moessbauer spectra of tin-doped YCrO{sub 3}, obtained by annealing in air of an YCr({sup 119}Sn{sup 4+}){sub 0.003}(OH){sub 6} . xH{sub 2}O precursor, provide evidence for the location of Sn{sup 4+} on the Cr{sup 3+} site in the bulk of crystallites. Below the Neel point of YCrO{sub 3} (T{sub N} = 141 K), Sn{sup 4+} ions are spin-polarized, the majority exhibiting a hyperfine field H of 80 kOe at 4.2 K. Analysis of the {sup 119}Sn spectra of another sample, obtained by impregnation of polycrystalline YCrO{sub 3} with a solution of {sup 119}SnCl{sub 4}, shows that annealing in H{sub 2} results in the location of the dopant, in the divalent state, on the surface of the crystallites. The parameters of an in situ {sup 119}Sn spectrum at 295 K (isomer shift {delta} = 2.76 mm s{sup -1} and quadrupole splitting E{sub Q} = 1.95 mm s{sup -1}) reveal the presence of Sn{sup 2+} ions on sites with a coordination number CN < 6. At 100 K these Sn{sup 2+} ions exhibit no spin polarization. Upon contact with air they are rapidly oxidized to the tetravalent state, as demonstrated by their modified isomer shift value {delta} = 0.06 mm s{sup -1}. For the large majority of both the residual 'parent' Sn{sup 2+} ions and the 'daughter' Sn{sup 4+} ones no spin polarization is observed down to 4.2 K. This means that surface-located tin dopant cations, regardless of their oxidation state, occupy the Y{sup 3+} sites with an equal number of Cr{sup 3+} neighbors having mutually opposite spin orientations. (orig.)

  14. Dopant-site-dependent scattering by dislocations in epitaxial films of perovskite semiconductor BaSnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Useong; Park, Chulkwon; Kim, Rokyeon; Mun, Hyo Sik; Kim, Hoon Min; Kim, Namwook; Yu, Jaejun; Char, Kookrin, E-mail: kchar@phya.snu.ac.kr [Center for Strongly Correlated Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Ha, Taewoo; Kim, Jae Hoon [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Hyung Joon; Kim, Tai Hoon; Kim, Kee Hoon [Center for Novel States of Complex Materials Research, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2014-05-01

    We studied the conduction mechanism in Sb-doped BaSnO{sub 3} epitaxial films, and compared its behavior with that of the mechanism of its counterpart, La-doped BaSnO{sub 3}. We found that the electron mobility in BaSnO{sub 3} films was reduced by almost 7 times when the dopant was changed from La to Sb, despite little change in the effective mass of the carriers. This indicates that the scattering rate of conduction electrons in the BaSnO{sub 3} system is strongly affected by the site at which the dopants are located. More importantly, we found that electron scattering by threading dislocations also depends critically on the dopant site. We propose that the large enhancement of scattering by the threading dislocations in Sb-doped BaSnO{sub 3} films is caused by the combination effect of the change in the distribution of Sb impurities in the films, the formation of the Sb impurity clusters near the threading dislocations, and the conduction electron clustering near the Sb impurities.

  15. Theoretical study of nitrogen-doped graphene nanoflakes: Stability and spectroscopy depending on dopant types and flake sizes.

    Science.gov (United States)

    Lin, Chih-Kai

    2018-03-05

    As nitrogen-doped graphene has been widely applied in optoelectronic devices and catalytic reactions, in this work we have investigated where the nitrogen atoms tend to reside in the material and how they affect the electron density and spectroscopic properties from a theoretical point of view. DFT calculations on N-doped hexagonal and rectangular graphene nanoflakes (GNFs) showed that nitrogen atoms locating on zigzag edges are obviously more stable than those on armchair edges or inside flakes, and interestingly, the N-hydrogenated pyridine moiety could be preferable to pure pyridine moiety in large models. The UV-vis absorption spectra of these nitrogen-doped GNFs display strong dependence on flake sizes, where the larger flakes have their major peaks in lower energy ranges. Moreover, the spectra exhibit different connections to various dopant types and positions: the graphitic-type dopant species present large variety in absorption profiles, while the pyridinic-type ones show extraordinary uniform stability and spectra independent of dopant positions/numbers and hence are hardly distinguishable from each other. © 2018 Wiley Periodicals, Inc. © 2018 Wiley Periodicals, Inc.

  16. Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

    International Nuclear Information System (INIS)

    Whelan, S.; La Magna, A.; Privitera, V.; Mannino, G.; Italia, M.; Bongiorno, C.; Fortunato, G.; Mariucci, L.

    2003-01-01

    Excimer laser annealing (ELA) of ultra-low-energy (ULE) B-ion implanted Si has been performed. High-resolution transmission electron microscopy has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been investigated as a function of the laser energy density (melted depth), the implant dose, and the number of laser pulses (melt time). The activated and retained dose has been evaluated with spreading resistance profiling and secondary ion mass spectrometry. A significant amount of the implanted dopant was lost from the sample during ELA. However, the dopant that was retained in crystal material was fully activated following rapid resolidification. At an atomic concentration below the thermodynamic limit, the activation efficiency (dose activated/dose implanted into Si material) was a constant for a fixed melt depth, irrespective of the dose implanted and hence the total activated dose was raised as the implant dose was increased. The electrical activation was increased for high laser energy density annealing when the dopant was redistributed over a deeper range

  17. Crystal structure, chemical bond and enhanced performance of β-Zn{sub 4}Sb{sub 3} compounds with interstitial indium dopant

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Dingguo [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Key Laboratory of Catalysis and Materials Science of the State Ethnic Affair Commission and Ministry of Education, South-Central University for Nationalities, Wuhan 430074 (China); Zhao, Wenyu, E-mail: wyzhao@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Yu, Jian; Wei, Ping; Zhou, Hongyu; Zhu, Wanting [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China); Zhang, Qingjie, E-mail: zhangqj@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070 (China)

    2014-07-15

    Highlights: • The interstitial In dopant leads to the local structural perturbations in β-Zn{sub 4}Sb{sub 3}. • The simultaneous increases in α and σ are observed in the In-doped Zn{sub 4}Sb{sub 3} compounds. • The In dopant plays different doping behaviors by the dopant contents in the samples. • A maximum ZT of 1.41 at 700 K is achieved for the In-doped Zn{sub 4}Sb{sub 3} compounds. - Abstract: In-doped β-Zn{sub 4}Sb{sub 3} compounds (Zn{sub 4−x}In{sub x}Sb{sub 3}, 0 ⩽ x ⩽ 0.24) were prepared by melt-quenching and spark plasma sintering technology in the work. The resultant samples were systematically investigated by X-ray diffraction, X-ray photoelectron spectroscopy, differential scanning calorimetry and thermoelectric property measurements. The In dopant was identified to preferentially occupy the interstitial site in β-Zn{sub 4}Sb{sub 3} and led to the local structural perturbations near the 12c Sb2 and 36f Zn1 sites. The Auger parameters of Zn and Sb indicated that the increase in the valence of Zn was attributed to the charge transfer from Zn to In atoms. The binding energies of In 3d{sub 5/2} core level showed that the interstitial In dopant was n-type dopant (In{sup 3+}) in slightly In-doped Zn{sub 4−x}In{sub x}Sb{sub 3}, but acted as acceptor and was p-type dopant (In{sup +}) in heavily In-doped ones. The discovery provides a reasonable explanation for the puzzled relation between σ and x for Zn{sub 4−x}In{sub x}Sb{sub 3}. Simultaneously increasing the electrical conductivity and Seebeck coefficient of Zn{sub 4−x}In{sub x}Sb{sub 3} can be realized through the local structural perturbations. The significantly enhanced power factor and the intrinsic low thermal conductivity resulted in a remarkable increase in the dimensionless figure of merit (ZT). The highest ZT reached 1.41 at 700 K for Zn{sub 3.82}In{sub 0.18}Sb{sub 3} and increased by 68% compared with that of the undoped β-Zn{sub 4}Sb{sub 3}.

  18. Synthesis and characterization of the polyaniline dopant Schiff base

    Directory of Open Access Journals (Sweden)

    Mirian Y. Matsumoto

    2012-06-01

    Full Text Available The Schiff base, N-salicilidenoanilina was used as dopant to induce polymerization of aniline and thus preparing polyaniline (PAni. The different conditions of preparation, including Schiff base structure, and the dosage of acidity reaction medium, were investigated to discuss the influence of these conditions relative conductivity of the resulting samples. The products were also characterized by Fourier transform infrared (FTIR, ultraviolet-visible (UV-Vis, electrochemical impedance spectroscopy (EIE. The results showed the synthesis conditions play an important in the formation and the final properties of the polyaniline

  19. Comprehensive mechanism and structure-sensitivity of ethanol oxidation on platinum: new transition-state searching method for resolving the complex reaction network.

    Science.gov (United States)

    Wang, Hui-Fang; Liu, Zhi-Pan

    2008-08-20

    Ethanol oxidation on Pt is a typical multistep and multiselectivity heterogeneous catalytic process. A comprehensive understanding of this fundamental reaction would greatly benefit design of catalysts for use in direct ethanol fuel cells and the degradation of biomass-derived oxygenates. In this work, the reaction network of ethanol oxidation on different Pt surfaces, including close-packed Pt{111}, stepped Pt{211}, and open Pt{100}, is explored thoroughly with an efficient reaction path searching method, which integrates our new transition-state searching technique with periodic density functional theory calculations. Our new technique enables the location of the transition state and saddle points for most surface reactions simply and efficiently by optimization of local minima. We show that the selectivity of ethanol oxidation on Pt depends markedly on the surface structure, which can be attributed to the structure-sensitivity of two key reaction steps: (i) the initial dehydrogenation of ethanol and (ii) the oxidation of acetyl (CH3CO). On open surface sites, ethanol prefers C-C bond cleavage via strongly adsorbed intermediates (CH2CO or CHCO), which leads to complete oxidation to CO2. However, only partial oxidizations to CH3CHO and CH3COOH occur on Pt{111}. Our mechanism points out that the open surface Pt{100} is the best facet to fully oxidize ethanol at low coverages, which sheds light on the origin of the remarkable catalytic performance of Pt tetrahexahedra nanocrystals found recently. The physical origin of the structure-selectivity is rationalized in terms of both thermodynamics and kinetics. Two fundamental quantities that dictate the selectivity of ethanol oxidation are identified: (i) the ability of surface metal atoms to bond with unsaturated C-containing fragments and (ii) the relative stability of hydroxyl at surface atop sites with respect to other sites.

  20. Highly Sensitive Sensors Based on Metal-Oxide Nanocolumns for Fire Detection

    Directory of Open Access Journals (Sweden)

    Kwangjae Lee

    2017-02-01

    Full Text Available A fire detector is the most important component in a fire alarm system. Herein, we present the feasibility of a highly sensitive and rapid response gas sensor based on metal oxides as a high performance fire detector. The glancing angle deposition (GLAD technique is used to make the highly porous structure such as nanocolumns (NCs of various metal oxides for enhancing the gas-sensing performance. To measure the fire detection, the interface circuitry for our sensors (NiO, SnO2, WO3 and In2O3 NCs is designed. When all the sensors with various metal-oxide NCs are exposed to fire environment, they entirely react with the target gases emitted from Poly(vinyl chlorides (PVC decomposed at high temperature. Before the emission of smoke from the PVC (a hot-plate temperature of 200 °C, the resistances of the metal-oxide NCs are abruptly changed and SnO2 NCs show the highest response of 2.1. However, a commercial smoke detector did not inform any warning. Interestingly, although the NiO NCs are a p-type semiconductor, they show the highest response of 577.1 after the emission of smoke from the PVC (a hot-plate temperature of 350 °C. The response time of SnO2 NCs is much faster than that of a commercial smoke detector at the hot-plate temperature of 350 °C. In addition, we investigated the selectivity of our sensors by analyzing the responses of all sensors. Our results show the high potential of a gas sensor based on metal-oxide NCs for early fire detection.

  1. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  2. One pot synthesis of multi-functional tin oxide nanostructures for high efficiency dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Wali, Qamar; Fakharuddin, Azhar; Yasin, Amina; Ab Rahim, Mohd Hasbi; Ismail, Jamil; Jose, Rajan, E-mail: rjose@ump.edu.my

    2015-10-15

    Photoanode plays a key role in dye sensitized solar cells (DSSCs) as a scaffold for dye molecules, transport medium for photogenerated electrons, and scatters light for improved absorption. Herein, tin oxide nanostructures unifying the above three characteristics were optimized by a hydrothermal process and used as photoanode in DSSCs. The optimized morphology is a combination of hollow porous nanoparticles of size ∼50 nm and micron sized spheres with BET surface area (up to 29 m{sup 2}/g) to allow large dye-loading and light scattering as well as high crystallinity to support efficient charge transport. The optimized morphology gave the highest photovoltaic conversion efficiency (∼7.5%), so far achieved in DSSCs with high open circuit voltage (∼700 mV) and short circuit current density (∼21 mA/cm{sup 2}) employing conventional N3 dye and iodide/triiodide electrolyte. The best performing device achieved an incident photon to current conversion efficiency of ∼90%. The performance of the optimized tin oxide nanostructures was comparable to that of conventional titanium based DSSCs fabricated at similar conditions. - Graphical abstract: Tin oxide hollow nanostructure simultaneously supporting improved light scattering, dye-loading, and charge transport yielded high photovoltaic conversion efficiency in dye-sensitized solar cells. - Highlights: • Uniformly and bimodelly distributed tin oxide hollow nanospheres (HNS) are synthesized. • Uniform HNS are of size ∼10 nm; bimodel HNS has additional size up to ∼800 nm. • They are evaluated as photoelectrodes in dye-sensitized solar cells (DSSCs). • The uniform HNS increase dye-loading and the larger increase light scattering in DSSCs. • Photo conversion efficiency ∼7.5% is achieved using bimodel HNS.

  3. Dye-sensitized solar cells based on different nano-oxides on plastic PET substrate

    Science.gov (United States)

    Mikula, Milan; Gemeiner, Pavol; Beková, Zuzana; Dvonka, Vladimír; Búc, Dalibor

    2015-01-01

    Polyethylene-terephthalate (PET) foils and glass slides coated with thin conductive layers were used as substrates for TiO2 or ZnO based photoactive electrodes of dye-sensitized solar cells (DSSC) with organo-metallic Ru-dye, standard iodine electrolyte and Pt coated FTO/glass counterelectrode (CE). Different compositions of nanoparticle oxides in forms of alcohol pastes as well as the CE paste were applied onto the substrates by screen printing or by doctor blade techniques. Photocurrents and I-V loading characteristics were measured depending on the solar cell structure and preparation, including the oxide composition, electrode conductivity and the dye type. The influence of thin TiO2 blocking layer prepared by sol-gel technique is also discussed.

  4. Role of dopant concentration, crystal phase and particle size on microbial inactivation of Cu-doped TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sahu, Manoranjan; Wu Bing; Zhu Liying; Jacobson, Craig; Wang Weining; Jones, Kristen; Goyal, Yogesh; Tang, Yinjie J; Biswas, Pratim, E-mail: pbiswas@wustl.edu [Department of Energy, Environmental and Chemical Engineering, Washington University in St Louis, St Louis, MO 63130 (United States)

    2011-10-14

    The properties of Cu-doped TiO{sub 2} nanoparticles (NPs) were independently controlled in a flame aerosol reactor by varying the molar feed ratios of the precursors, and by optimizing temperature and time history in the flame. The effect of the physico-chemical properties (dopant concentration, crystal phase and particle size) of Cu-doped TiO{sub 2} nanoparticles on inactivation of Mycobacterium smegmatis (a model pathogenic bacterium) was investigated under three light conditions (complete dark, fluorescent light and UV light). The survival rate of M. smegmatis (in a minimal salt medium for 2 h) exposed to the NPs varied depending on the light irradiation conditions as well as the dopant concentrations. In dark conditions, pristine TiO{sub 2} showed insignificant microbial inactivation, but inactivation increased with increasing dopant concentration. Under fluorescent light illumination, no significant effect was observed for TiO{sub 2}. However, when TiO{sub 2} was doped with copper, inactivation increased with dopant concentration, reaching more than 90% (>3 wt% dopant). Enhanced microbial inactivation by TiO{sub 2} NPs was observed only under UV light. When TiO{sub 2} NPs were doped with copper, their inactivation potential was promoted and the UV-resistant cells were reduced by over 99%. In addition, the microbial inactivation potential of NPs was also crystal-phase-and size-dependent under all three light conditions. A lower ratio of anatase phase and smaller sizes of Cu-doped TiO{sub 2} NPs resulted in decreased bacterial survival. The increased inactivation potential of doped TiO{sub 2} NPs is possibly due to both enhanced photocatalytic reactions and leached copper ions.

  5. Chronotope Disruption as a Sensitizing Concept for Understanding Chronic Illness Narratives

    Science.gov (United States)

    2014-01-01

    Objectives: This article aims to elaborate chronotope disruption —a changed relation to time and space— as a sensitizing concept for understanding chronic illness narratives. Methods: Sixteen men and 16 women with Type 2 diabetes were purposefully sampled. Each was interviewed about his or her experience of diabetes self-management using the biographical-narrative interview method. Transcripts were inspected for key moments defined as emotionally laden stories relevant to the purpose of the research. We present dialogically inflected discursive analysis of exemplar extracts. Results: The analysis demonstrates how the concept of chronotope disruption helps identify, and understand, important aspects of patients’ chronic illness narratives. First, we investigate how medical advice can conflict with embodied experience and how progressive bodily deterioration can provoke a reevaluation of past illness (self-mis)management. Second, the increasing temporal and spatial intrusion of chronic illness into participants’ lives is examined. Finally, we focus on the masquerade of health as an attempt to manage, hide, or deny that one is physically challenged. Conclusions: Chronotope disruption offers a useful sensitizing concept for approaching chronic illness narratives and around which to organize analytical insights and to develop practice. Chronotope analysis fills an important gap in the science through compensating current health sciences’ focus on rationality, cognition, and prospective time (prediction) with a patient-oriented focus on emotionality, embodiment, and retrospective time (nostalgia). Chronotope disruption could be used to develop practice by gaining empathic understanding of patients’ life-worlds and provides a tool to examine how new technologies change the way in which the chronically ill have “being” in the world. PMID:25197985

  6. Genetic algorithm based approach to investigate doped metal oxide materials: Application to lanthanide-doped ceria

    Science.gov (United States)

    Hooper, James; Ismail, Arif; Giorgi, Javier B.; Woo, Tom K.

    2010-06-01

    A genetic algorithm (GA)-inspired method to effectively map out low-energy configurations of doped metal oxide materials is presented. Specialized mating and mutation operations that do not alter the identity of the parent metal oxide have been incorporated to efficiently sample the metal dopant and oxygen vacancy sites. The search algorithms have been tested on lanthanide-doped ceria (L=Sm,Gd,Lu) with various dopant concentrations. Using both classical and first-principles density-functional-theory (DFT) potentials, we have shown the methodology reproduces the results of recent systematic searches of doped ceria at low concentrations (3.2% L2O3 ) and identifies low-energy structures of concentrated samarium-doped ceria (3.8% and 6.6% L2O3 ) which relate to the experimental and theoretical findings published thus far. We introduce a tandem classical/DFT GA algorithm in which an inexpensive classical potential is first used to generate a fit gene pool of structures to enhance the overall efficiency of the computationally demanding DFT-based GA search.

  7. Graphene oxide-sensitized molecularly imprinted opto-polymers for charge-transfer fluorescent sensing of cyanoguanidine.

    Science.gov (United States)

    Liu, Huilin; Zhou, Kaiwen; Chen, Xiaomo; Wang, Jing; Wang, Shuo; Sun, Baoguo

    2017-11-15

    The hierarchical structuring of materials offers exciting opportunities to construct functional sensors. Multiple processes were combined to create complex materials for the selective detection of cyanoguanidine (CYA) using graphene oxide-sensitized molecularly imprinted opto-polymers (MIOP). Molecular imprinting was used to construct molecular-scale analyte-selective cavities, graphene oxide was introduced to provide a platform for the polymerization, and increase the stability and binding kinetic properties, and 3-methacryloxy propyl trimethoxy silane-modified quantum dots were combined with a functional monomer to increase the fluorescence quantum yield. Polymer cross-linking and fluorescence intensity were optimized for molecular recognition and opto-sensing detection. Selective and sensitive, fluorescence sensing of CYA was possible at concentrations as low as to 1.6μM. It could be applied to the rapid and cost-effective monitoring of CYA in infant formula. The approach is generic and applicable to many molecules and conventional opto-sensors, based on molecularly imprinted polymer formulations, individually or in multiplexed arrays. Copyright © 2017 Elsevier Ltd. All rights reserved.

  8. Controlled light emission from white organic light-emitting devices with a single blue-emitting host and multiple fluorescent dopants

    International Nuclear Information System (INIS)

    Chin, Byung Doo; Kim, Jai Kyeong; Park, O Ok

    2007-01-01

    In this work, we fabricated white organic light-emitting devices (WOLEDs) containing a layered light-emitting region composed of a single blue-emitting host and different fluorescent dopant materials. The effects of varying the dye-doping ratio and emitting layer thickness on the efficiency, lifetime, spectral voltage-dependence and white balance were investigated for devices with a blue/orange stacked layer structure. Addition of a blue host layer doped with a green-emitting dopant, to give a blue/green/orange emitter, resulted in a broadband white spectrum without the need for a charge-blocking interlayer. The composition of blue, green and orange dopants in the host and the thickness of each emitting layer were optimized, resulting in a device efficiency of 9-11 cd A -1 even at a high brightness of 10 000 cd m -2 (achieved at a bias voltage of less than 9 V) with an emission spectrum suitable for lighting applications

  9. Association of oxidative status and insulin sensitivity in periparturient dairy cattle: an observational study.

    Science.gov (United States)

    Abuelo, A; Hernández, J; Benedito, J L; Castillo, C

    2016-04-01

    Post-parturient insulin resistance (IR) is a common feature in all mammalian animals. However, in dairy cows, it can be exacerbated because of high milk yield, leading to excessive negative energy balance, which is related with increased disease incidence, reduced milk production and worsened reproductive performance. IR has been extensively investigated in humans suffering from diabetes mellitus. In these subjects, it is known that oxidative stress (OS) plays a causative role in the onset of IR. Although OS occurs in transitional dairy cattle, there are yet no studies that investigated the association between IR and OS in dairy cattle. Therefore, the aim of this study was to investigate whether there is a relationship between OS and IR in dairy cattle. Serum samples were taken repeatedly from 22 dairy cows from 2 months prior to the expected calving date to 2 months after calving and were analysed for markers of metabolic and redox balance. Surrogate indices of insulin sensitivity were also calculated. Generalised linear mixed models revealed an effect of the oxidative status on peripheral insulin concentration and on indices of insulin sensitivity. Hence, field trials should investigate the effectiveness of antioxidant therapy on insulin sensitivity in peripheral tissues during the transition period of dairy cattle. Journal of Animal Physiology and Animal Nutrition © 2015 Blackwell Verlag GmbH.

  10. Cys34-cysteinylated human serum albumin is a sensitive plasma marker in oxidative stress-related chronic diseases.

    Directory of Open Access Journals (Sweden)

    Kohei Nagumo

    Full Text Available The degree of oxidized cysteine (Cys 34 in human serum albumin (HSA, as determined by high performance liquid chromatography (HPLC, is correlated with oxidative stress related pathological conditions. In order to further characterize the oxidation of Cys34-HSA at the molecular level and to develop a suitable analytical method for a rapid and sensitive clinical laboratory analysis, the use of electrospray ionization time-of-flight mass spectrometer (ESI-TOFMS was evaluated. A marked increase in the cysteinylation of Cys34 occurs in chronic liver and kidney diseases and diabetes mellitus. A significant positive correlation was observed between the Cys-Cys34-HSA fraction of plasma samples obtained from 229 patients, as determined by ESI-TOFMS, and the degree of oxidized Cys34-HSA determined by HPLC. The Cys-Cys34-HSA fraction was significantly increased with the progression of liver cirrhosis, and was reduced by branched chain amino acids (BCAA treatment. The changes in the Cys-Cys34-HSA fraction were significantly correlated with the alternations of the plasma levels of advanced oxidized protein products, an oxidative stress marker for proteins. The binding ability of endogenous substances (bilirubin and tryptophan and drugs (warfarin and diazepam to HSA purified from chronic liver disease patients were significantly suppressed but significantly improved by BCAA supplementation. Interestingly, the changes in this physiological function of HSA in chronic liver disease were correlated with the Cys-Cys34-HSA fraction. In conclusion, ESI-TOFMS is a suitable high throughput method for the rapid and sensitive quantification of Cys-Cys34-HSA in a large number of samples for evaluating oxidative stress related chronic disease progression or in response to a treatment.

  11. Sensitivity analysis in oxidation ditch modelling: the effect of variations in stoichiometric, kinetic and operating parameters on the performance indices

    NARCIS (Netherlands)

    Abusam, A.A.A.; Keesman, K.J.; Straten, van G.; Spanjers, H.; Meinema, K.

    2001-01-01

    This paper demonstrates the application of the factorial sensitivity analysis methodology in studying the influence of variations in stoichiometric, kinetic and operating parameters on the performance indices of an oxidation ditch simulation model (benchmark). Factorial sensitivity analysis

  12. An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication

    Science.gov (United States)

    Liu, Yongxun; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

    2017-06-01

    Solid source diffusions of phosphorus (P) and boron (B) into the half-inch (12.5 mm) minimal silicon (Si) wafers by spin on dopants (SOD) have been systematically investigated and the physical-vapor-deposited (PVD) titanium nitride (TiN) metal gate minimal silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have successfully been fabricated using the developed SOD thermal diffusion technique. It was experimentally confirmed that a low temperature oxidation (LTO) process which depresses a boron silicide layer formation is effective way to remove boron-glass in a diluted hydrofluoric acid (DHF) solution. It was also found that top Si layer thickness of SOI wafers is reduced in the SOD thermal diffusion process because of its consumption by thermal oxidation owing to the oxygen atoms included in SOD films, which should be carefully considered in the ultrathin SOI device fabrication. Moreover, normal operations of the fabricated minimal PVD-TiN metal gate SOI-CMOS inverters, static random access memory (SRAM) cells and ring oscillators have been demonstrated. These circuit level results indicate that no remarkable particles and interface traps were introduced onto the minimal wafers during the device fabrication, and the developed solid source diffusion by SOD is useful for the fabrication of functional logic gate minimal SOI-CMOS integrated circuits.

  13. Imaging Dirac-mass disorder from magnetic dopant atoms in the ferromagnetic topological insulator Crx(Bi0.1Sb0.9)2-xTe3.

    Science.gov (United States)

    Lee, Inhee; Kim, Chung Koo; Lee, Jinho; Billinge, Simon J L; Zhong, Ruidan; Schneeloch, John A; Liu, Tiansheng; Valla, Tonica; Tranquada, John M; Gu, Genda; Davis, J C Séamus

    2015-02-03

    To achieve and use the most exotic electronic phenomena predicted for the surface states of 3D topological insulators (TIs), it is necessary to open a "Dirac-mass gap" in their spectrum by breaking time-reversal symmetry. Use of magnetic dopant atoms to generate a ferromagnetic state is the most widely applied approach. However, it is unknown how the spatial arrangements of the magnetic dopant atoms influence the Dirac-mass gap at the atomic scale or, conversely, whether the ferromagnetic interactions between dopant atoms are influenced by the topological surface states. Here we image the locations of the magnetic (Cr) dopant atoms in the ferromagnetic TI Cr0.08(Bi0.1Sb0.9)1.92Te3. Simultaneous visualization of the Dirac-mass gap Δ(r) reveals its intense disorder, which we demonstrate is directly related to fluctuations in n(r), the Cr atom areal density in the termination layer. We find the relationship of surface-state Fermi wavevectors to the anisotropic structure of Δ(r) not inconsistent with predictions for surface ferromagnetism mediated by those states. Moreover, despite the intense Dirac-mass disorder, the anticipated relationship [Formula: see text] is confirmed throughout and exhibits an electron-dopant interaction energy J* = 145 meV·nm(2). These observations reveal how magnetic dopant atoms actually generate the TI mass gap locally and that, to achieve the novel physics expected of time-reversal symmetry breaking TI materials, control of the resulting Dirac-mass gap disorder will be essential.

  14. Investigation of MoO{sub x}/n-Si strong inversion layer interfaces via dopant-free heterocontact

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Teng; Liu, Ruiyuan; Wu, Chen; Zhong, Yanan; Liu, Yuqiang; Wang, Yusheng; Han, Yujie; Xia, Zhouhui; Zou, Yatao; Song, Tao; Duhm, Steffen; Sun, Baoquan [Inst. of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Lab. for Carbon-Based Functional Materials and Devices, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow Univ. (China); Wang, Rongbin [Inst. of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Lab. for Carbon-Based Functional Materials and Devices, Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow Univ. (China); Institut fuer Physik and IRIS Adlershof, Humboldt-Universitaet Berlin (Germany); Koch, Norbert [Institut fuer Physik and IRIS Adlershof, Humboldt-Universitaet Berlin (Germany); Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

    2017-07-15

    Transition metal oxides (TMOs)/silicon (Si) heterocontact solar cells are currently under intensive investigation due to their simple fabrication process and less parasitic light absorption compared to traditional heterocontact counterparts. Effective segregation of carriers which is related to carrier-selective heterocontact is crucial for the performance of photovoltaic devices. Molybdenum oxide (MoO{sub x}, x ≤ 3), with a wide bandgap of ∝3.24 eV as well as defect bands derived from oxygen vacancies located inside the band gap, has been introduced to integrate with n-type Si (n-Si) as hole selective contact. Here, we utilize a stepwise in situ deposition of MoO{sub x} to investigate its interaction with Si by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements. A strong inversion layer originating from a charge transfer process is demonstrated in the n-Si surface region upon MoO{sub x} contact characterized by XPS, UPS, capacitance-voltage (C-V), and minority charge carrier lifetime mapping measurements. A dopant-free heterocontact is built within n-Si with a high built-in potential (V{sub bi}) of ∝0.80 V which benefits for acquiring a high open circuit voltage (V{sub oc}). These results give a detailed interpretation on the carrier transport mechanism of MoO{sub x}/n-Si heterocontact and also pave a new route toward fabricating high efficiency, low-cost solar cells. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Highly sensitive methanol chemical sensor based on undoped silver oxide nanoparticles prepared by a solution method

    International Nuclear Information System (INIS)

    Rahman, M.M.; Khan, S.B.; Asiri, A.M.; Jamal, A.; Faisal, M.

    2012-01-01

    We have prepared silver oxide nanoparticles (NPs) by a simple solution method using reducing agents in alkaline medium. The resulting NPs were characterized by UV-vis and FT-IR spectroscopy, X-ray powder diffraction, and field-emission scanning electron microscopy. They were deposited on a glassy carbon electrode to give a sensor with a fast response towards methanol in liquid phase. The sensor also displays good sensitivity and long-term stability, and enhanced electrochemical response. The calibration plot is linear (r 2 = 0.8294) over the 0.12 mM to 0.12 M methanol concentration range. The sensitivity is ∼ 2.65 μAcm -2 mM -1 , and the detection limit is 36.0 μM (at a SNR of 3). We also discuss possible future prospective uses of this metal oxide semiconductor nanomaterial in terms of chemical sensing. (author)

  16. Imaging of dopant distribution in optical fibers with an orthogonal TOF SIMS

    Czech Academy of Sciences Publication Activity Database

    Lorinčík, Jan; Kašík, Ivan; Vaniš, Jan; Sedláček, L.; Dluhoš, J.

    2014-01-01

    Roč. 46, č. 1 (2014), s. 238-240 ISSN 0142-2421. [19th International Conference on Secondary Ion Mass Spectrometry ( SIMS ). Jeju, 29.09.2013-04.10.2013] Grant - others:GA AV ČR(CZ) M100761202 Institutional support: RVO:67985882 Keywords : TOF SIMS * Optical fibers * Dopant Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.245, year: 2014

  17. The effect of dopants on laser imprint mitigation

    Science.gov (United States)

    Phillips, Lee; Gardner, John H.; Bodner, Stephen E.; Colombant, Denis; Dahlburg, Jill

    1999-11-01

    An intact implosion of a pellet for direct-drive ICF requires that the perturbations imprinted by the laser be kept below some threshold. We report on simulations of targets that incorporate very small concentrations of a high-Z dopant in the ablator, to increase the electron density in the ablating plasma, causing the laser to be absorbed far enough from the solid ablator to achieve a substantial degree of thermal smoothing. These calculations were performed using NRL's FAST radiation hydrodynamics code(J.H. Gardner, A.J. Schmitt, et al., Phys. Plasmas) 5, 1935 (1998), incorporating the flux-corrected transport algorithm and opacities generated by an STA code, with non-LTE radiation transport based on the Busquet method.

  18. Role of atomic layer deposited aluminum oxide as oxidation barrier for silicon based materials

    Energy Technology Data Exchange (ETDEWEB)

    Fiorentino, Giuseppe, E-mail: g.fiorentino@tudelft.nl; Morana, Bruno [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT Delft (Netherlands); Forte, Salvatore [Department of Electronic, University of Naples Federico II, Piazzale Tecchio, 80125 Napoli (Italy); Sarro, Pasqualina Maria [Department of Microelectronic, Delft University of Technology, Feldmannweg 17, 2628 CT, Delft (Netherlands)

    2015-01-15

    In this paper, the authors study the protective effect against oxidation of a thin layer of atomic layer deposited (ALD) aluminum oxide (Al{sub 2}O{sub 3}). Nitrogen doped silicon carbide (poly-SiC:N) based microheaters coated with ALD Al{sub 2}O{sub 3} are used as test structure to investigate the barrier effect of the alumina layers to oxygen and water vapor at very high temperature (up to 1000 °C). Different device sets have been fabricated changing the doping levels, to evaluate possible interaction between the dopants and the alumina layer. The as-deposited alumina layer morphology has been evaluated by means of AFM analysis and compared to an annealed sample (8 h at 1000 °C) to estimate the change in the grain structure and the film density. The coated microheaters are subjected to very long oxidation time in dry and wet environment (up to 8 h at 900 and 1000 °C). By evaluating the electrical resistance variation between uncoated reference devices and the ALD coated devices, the oxide growth on the SiC is estimated. The results show that the ALD alumina coating completely prevents the oxidation of the SiC up to 900 °C in wet environment, while an oxide thickness reduction of 50% is observed at 1000 °C compared to uncoated devices.

  19. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    International Nuclear Information System (INIS)

    Alver, Ü.; Tanrıverdi, A.

    2016-01-01

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  20. Boron doped ZnO embedded into reduced graphene oxide for electrochemical supercapacitors

    Energy Technology Data Exchange (ETDEWEB)

    Alver, Ü., E-mail: ualver@ktu.edu.tr [Karadeniz Technical University, Dept. of Metallurgical and Materials Engineering, 61080 Trabzon (Turkey); Tanrıverdi, A. [Kahramanmaras Sutcu Imam University, Department of Physics, 46100 Kahramanmaraş (Turkey)

    2016-08-15

    Highlights: • Boron doped ZnO particles are fabricated and embedded into reduced graphene oxide (RGO) by hydrothermal method. • RGO/ZnO:B composites are used as electrodes for supercapacitors. • Presence of boron in RGO/ZnO composites caused increasing the stability and specific capacitance of electrodes. - Abstract: In this work, reduced graphene oxide/boron doped zinc oxide (RGO/ZnO:B) composites were fabricated by a hydrothermal process and their electrochemical properties were investigated as a function of dopant concentration. First, boron doped ZnO (ZnO:B) particles was fabricated with different boron concentrations (5, 10, 15 and 20 wt%) and then ZnO:B particles were embedded into RGO sheets. The physical properties of sensitized composites were characterized by XRD and SEM. Characterization indicated that the ZnO:B particles with plate-like structure in the composite were dispersed on graphene sheets. The electrochemical properties of the RGO/ZnO:B composite were investigated through cyclic voltammetry, galvanostatic charge/discharge measurements in a 6 M KOH electrolyte. Electrochemical measurements show that the specific capacitance values of RGO/ZnO:B electrodes increase with increasing boron concentration. RGO/ZnO:B composite electrodes (20 wt% B) display the specific capacitance as high as 230.50 F/g at 5 mV/s, which is almost five times higher than that of RGO/ZnO (52.71 F/g).

  1. Do intracellular thiol or peroxidase levels block radiation sensitization by nitrous oxide in some E. coli strains?

    International Nuclear Information System (INIS)

    Ewing, D.; Guilfoil, D.S.; Ohm, M.B.

    1991-01-01

    Although nitrous oxide (N 2 O) is often a radiation sensitizer in procaryotic cells, it fails to sensitize some strains of bacteria, some yeast strains, and most eucaryotic cell lines. At present this inconsistency cannot be satisfactorily explained. The experiments here use eight strains of E. coli, some of which are not sensitized by N 2 O, to test the hypotheses that N 2 O's failure to sensitize might be based on high thiol content or on low peroxidase activity. Our data contradict those hypotheses. In addition, further data show that the strains not sensitized by N 2 O contain no unique cellular component or compound which blocks damage from N 2 O. (author)

  2. P2 asymmetry of Au's M-band flux and its smoothing effect due to high-Z ablator dopants

    Directory of Open Access Journals (Sweden)

    Yongsheng Li

    2017-03-01

    Full Text Available X-ray drive asymmetry is one of the main seeds of low-mode implosion asymmetry that blocks further improvement of the nuclear performance of “high-foot” experiments on the National Ignition Facility [Miller et al., Nucl. Fusion 44, S228 (2004]. More particularly, the P2 asymmetry of Au's M-band flux can also severely influence the implosion performance of ignition capsules [Li et al., Phys. Plasmas 23, 072705 (2016]. Here we study the smoothing effect of mid- and/or high-Z dopants in ablator on Au's M-band flux asymmetries, by modeling and comparing the implosion processes of a Ge-doped ignition capsule and a Si-doped one driven by X-ray sources with P2 M-band flux asymmetry. As the results, (1 mid- or high-Z dopants absorb hard X-rays (M-band flux and re-emit isotropically, which helps to smooth the asymmetric M-band flux arriving at the ablation front, therefore reducing the P2 asymmetries of the imploding shell and hot spot; (2 the smoothing effect of Ge-dopant is more remarkable than Si-dopant because its opacity in Au's M-band is higher than the latter's; and (3 placing the doped layer at a larger radius in ablator is more efficient. Applying this effect may not be a main measure to reduce the low-mode implosion asymmetry, but might be of significance in some critical situations such as inertial confinement fusion (ICF experiments very near the performance cliffs of asymmetric X-ray drives.

  3. Dopant-free twinning superlattice formation in InSb and InP nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaoming [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT (Australia); He, Jun [School of Physics and Electronics, Hunan Key Laboratory for Supermicrostructure and Ultrafast Process, Central South University, Changsha, Hunan (China)

    2017-11-15

    Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Dopant-free twinning superlattice formation in InSb and InP nanowires

    International Nuclear Information System (INIS)

    Yuan, Xiaoming; Guo, Yanan; Caroff, Philippe; Tan, Hark Hoe; Jagadish, Chennupati; He, Jun

    2017-01-01

    Periodic arrangement of twin planes creates a controllable polytype that can affect both the electronic and optical properties of nanowires. The approach that is most used for inducing twinning superlattice (TSL) formation in III-V nanowires is introducing impurity dopants during growth. Here, we demonstrate that controlling the growth parameters is sufficient to produce regular twinning planes in Au-catalysed InSb and InP nanowires. Our results show that TSL formation in InSb nanowires only exists in a very narrow growth window. We suggest that growth conditions induce a high concentration of In (or Sb) in the Au droplet, which plays a similar role to that of surfactant impurities such as Zn, and increases the droplet wetting angle to yield a geometry that is favorable for TSL formation. The demonstration of TSL structure in InSb and InP nanowires by controlling the input of In (or Sb) further enhances fundamental understanding of TSL formation in III-V nanowires and allows us to tune the properties of these nanowires by crystal phase engineering. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Photosensitive self-assembling materials as functional dopants for organic photovoltaic cells

    Czech Academy of Sciences Publication Activity Database

    Bubnov, Alexej; Iwan, A.; Cigl, Martin; Boharewicz, B.; Tazbir, I.; Wójcik, K.; Sikora, A.; Hamplová, Věra

    2016-01-01

    Roč. 6, č. 14 (2016), s. 11577-11590 ISSN 2046-2069 R&D Projects: GA MŠk 7AMB13PL041; GA MŠk(CZ) LD14007; GA ČR GA15-02843S Grant - others:EU - ICT(XE) COST Action IC1208 Institutional support: RVO:68378271 Keywords : self-assembling materials * functional dopants * organic photovoltaic cells * azo group * liquid crystal Subject RIV: JI - Composite Materials Impact factor: 3.108, year: 2016

  6. The role of support and promoter on the oxidation of sulfur dioxide using platinum based catalysts

    DEFF Research Database (Denmark)

    Koutsopoulos, Sotiris; Rasmussen, Søren Birk; Eriksen, Kim Michael

    2006-01-01

    The catalytic oxidation of SO2 to SO3 was studied over platinum based catalysts in the absence and the presence of dopants. The active metal was supported on silica gel or titania (anatase) by impregnation. The activities of the silica supported catalysts were found to follow the order PtRh/SiO2 ...

  7. Electrochemical synthesis of nanostructured Se-doped SnS: Effect of Se-dopant on surface characterizations

    Science.gov (United States)

    Kafashan, Hosein; Azizieh, Mahdi; Balak, Zohre

    2017-07-01

    SnS1-xSex nanostructures with different Se-dopant concentrations were deposited on fluorine doped tin oxide (FTO) substrate through cathodic electrodeposition technique. The pH, temperature, applied potential (E), and deposition time remained were 2.1, 60 °C, -1 V, and 30 min, respectively. SnS1-xSex nanostructures were characterized using X-ray diffraction (XRD), field emission scanning electron microcopy (FESEM), energy dispersive X-ray spectroscopy (EDX), room temperature photoluminescence (PL), and UV-vis spectroscopy. The XRD patterns revealed that the SnS1-xSex nanostructures were polycrystalline with orthorhombic structure. FESEM showed various kinds of morphologies in SnS1-xSex nanostructures due to Se-doping. PL and UV-vis spectroscopy were used to evaluate the optical properties of SnS1-xSex thin films. The PL spectra of SnS1-xSex nanostructures displayed four emission peaks, those are a blue, a green, an orange, and a red emission. UV-vis spectra showed that the optical band gap energy (Eg) of SnS1-xSex nanostructures varied between 1.22-1.65 eV, due to Se-doping.

  8. Study of the chlorine as dopant in synthesized polymers by plasma; Estudio del cloro como dopante en polimeros sintetizados por plasma

    Energy Technology Data Exchange (ETDEWEB)

    Vasquez, M.; Cruz, G.; Olayo, M.G. [ININ, 52045 Ocoyoacac, Estado de Mexico (Mexico); Timoshina, T. [ESIQIE, IPN, 07738 Mexico D.F. (Mexico); Morales, J.; Olayo, R. [UAM-I, 09340 Mexico D.F. (Mexico)

    2003-07-01

    In the search of new and better dopants for semiconductor polymers, in this work the synthesis by plasma and the characterization of two doped polymers with chlorine, Pyrrole (PPy) and Thiophene (PTh) is presented. The characterization of the polymers it was carried out by FT-lR, it shows the C-Cl vibration that it is confirmed with the X-ray photoelectron spectroscopy technique (XPS). The elementary analysis shows a greater quantity of Cl in the PTh-CI compared with PPy-CI. However, this effect is not reflected in the electric conductivity since the PTh-Cl presents a lightly greater conductivity than the PPy-CI. SEM shows a formed structure of small agglomerated spheres of different size. (Author)

  9. Red blood cells sensitivity to oxidative stress in the presence of low concentrations of uranium compound

    Energy Technology Data Exchange (ETDEWEB)

    Shevchenko, O.G. [Institute of Biology, Komi Scientific Centre, Ural Branch of Russian Academy of Sciences, 167982, Syktyvkar (Russian Federation)

    2014-07-01

    Uranium is a natural radioactive element widespread in biosphere. There are a few works that examined cellular and molecular mechanisms of uranium toxicity. Red blood cells are classical model to investigate toxicity mechanisms on cell membrane system. The aim of present work is to study the effect of uranyl ion in nano-molar concentrations on erythrocytes sensitivity (in vitro) to factors provoking acute oxidative stress. Uranyl ions were added to suspension of mice red blood cells in PBS as UO{sub 2}Cl{sub 2} solution. Samples were incubated in a thermostatic shaker at 37 deg. C during 3-5 hours. Than acute oxidative stress was induced by H{sub 2}O{sub 2} (0.9 mM) or AAPH (5 mM) solutions. Destabilization of the membrane was induced by nonionic detergent Triton X-100. The hemolysis degree and the content of LPO secondary products reacting with 2-thiobarbituric acid in the incubation mixture were determined spectrophotometrically. The ratio of hemoglobin various forms (oxyHb, metHb and ferrylHb) was calculated taking into account extinction coefficients. It was shown that uranyl chloride enhances cell sensitivity to nonionic detergent Triton X-100 effects, indicating alterations of membrane acyl chain order due to contact with the radionuclide ions. Uranium exposure also caused an increase in the cell sensitivity to the AAPH effects, resulted in a decrease in red cell survival rate, a sharp increase in accumulation of hemoglobin oxidation products and a slight increase in the concentration of LPO secondary products. Thus, uranyl ions change physicochemical properties of the erythrocyte membranes that resulted in increased sensitivity to effects of peroxyl radicals formed by thermal decomposition of AAPH. On the contrary, use of another source of free radicals - H{sub 2}O{sub 2} - after uranyl ions exposure resulted in marked decrease of oxidative hemolysis, inhibition of LPO and hemoglobin oxidation. Since the uranium chemical properties similar to properties of

  10. Highly sensitive detection for proteins using graphene oxide-aptamer based sensors.

    Science.gov (United States)

    Gao, Li; Li, Qin; Li, Raoqi; Yan, Lirong; Zhou, Yang; Chen, Keping; Shi, Haixia

    2015-07-07

    In recent years, the detection of proteins by using bare graphene oxide (GO) to quench the fluorescence of fluorescein-labeled aptamers has been reported. However, the proteins can be adsorbed on the surface of bare GO to prevent the sensitivity from further being improved. In order to solve this problem, polyethylene glycol (PEG)-protected GO was used to prevent the proteins using thrombin as an example from nonspecific binding. The detection limit was improved compared to bare GO under the optimized ratio of GO to PEG concentration. The results show that our method is a promising technique for the detection of proteins.

  11. p-p Heterojunction of Nickel Oxide-Decorated Cobalt Oxide Nanorods for Enhanced Sensitivity and Selectivity toward Volatile Organic Compounds.

    Science.gov (United States)

    Suh, Jun Min; Sohn, Woonbae; Shim, Young-Seok; Choi, Jang-Sik; Song, Young Geun; Kim, Taemin L; Jeon, Jong-Myeong; Kwon, Ki Chang; Choi, Kyung Soon; Kang, Chong-Yun; Byun, Hyung-Gi; Jang, Ho Won

    2018-01-10

    The utilization of p-p isotype heterojunctions is an effective strategy to enhance the gas sensing properties of metal-oxide semiconductors, but most previous studies focused on p-n heterojunctions owing to their simple mechanism of formation of depletion layers. However, a proper choice of isotype semiconductors with appropriate energy bands can also contribute to the enhancement of the gas sensing performance. Herein, we report nickel oxide (NiO)-decorated cobalt oxide (Co 3 O 4 ) nanorods (NRs) fabricated using the multiple-step glancing angle deposition method. The effective decoration of NiO on the entire surface of Co 3 O 4 NRs enabled the formation of numerous p-p heterojunctions, and they exhibited a 16.78 times higher gas response to 50 ppm of C 6 H 6 at 350 °C compared to that of bare Co 3 O 4 NRs with the calculated detection limit of approximately 13.91 ppb. Apart from the p-p heterojunctions, increased active sites owing to the changes in the orientation of the exposed lattice surface and the catalytic effects of NiO also contributed to the enhanced gas sensing properties. The advantages of p-p heterojunctions for gas sensing applications demonstrated in this work will provide a new perspective of heterostructured metal-oxide nanostructures for sensitive and selective gas sensing.

  12. Oxide Nanoparticle EUV (ONE) Photoresists: Current Understanding of the Unusual Patterning Mechanism

    KAUST Repository

    Jiang, Jing; Zhang, Ben; Yu, Mufei; Li, Li; Neisser, Mark; Sung Chun, Jun; Giannelis, Emmanuel P.; Ober, Christopher K.

    2015-01-01

    © 2015 SPST. In the past few years, industry has made significant progress to deliver a stable high power EUV scanner and a 100 W light source is now being tested on the manufacuring scale. The success of a high power EUV source demands a fast and high resolution EUV resist. However, chemcially amplied resists encounter unprecedented challenges beyond the 22 nm node due to resolution, roughness and sensitivity tradeoffs. Unless novel solutions for EUV resists are proposed and further optimzed, breakthroughs can hardly be achieved. Oxide nanoparticle EUV (ONE) resists stablized by organic ligands were originally proposed by Ober et al. Recently this work attracts more and more attention due to its extraordinanry EUV sensitivity. This new class of photoresist utilizes ligand cleavage with a ligand exchange mechanism to switch its solubilty for dual-tone patterning. Therefore, ligand selection of the nanoparticles is extremely important to its EUV performance.

  13. Compositional dependence of optical and electrical properties of indium doped zinc oxide (IZO) thin films deposited by chemical spray pyrolysis

    Science.gov (United States)

    Dintle, Lawrence K.; Luhanga, Pearson V. C.; Moditswe, Charles; Muiva, Cosmas M.

    2018-05-01

    The structural and optoelectronic properties of undoped and indium doped zinc oxide (IZO) thin films grown on glass substrates through a simple reproducible custom-made pneumatic chemical spray pyrolysis technique are presented. X-ray diffraction (XRD) results showed a polycrystalline structure of hexagonal wurtzite phase growing preferentially along the (002) plane for the undoped sample. Increase in dopant content modified the orientation leading to more pronounced (100) and (101) reflections. Optical transmission spectra showed high transmittance of 80-90% in the visible range for all thin films. The optical band gap energy (Eg) was evaluated on the basis of the derivative of transmittance (dT/dλ) versus wavelength (λ) model and Tauc's extrapolation method in the region where the absorption coefficient, α ≥ 104 cm-1. The observed values of Eg were found to decrease generally with increasing In dopant concentration. From the figure of merit calculations a sample with 4 at.% In dopant concentration showed better optoelectronic properties.

  14. Influence of temperature and dopant concentration on structural, morphological and optical properties of nanometric Ce1-xErxO2-δ (x = 0.05–0.20) as a pigment

    KAUST Repository

    Stojmenović, Marija

    2015-07-31

    Ceramic pigments based on cerium oxide were synthesized by self–propagating room temperature method and their color properties were assessed from the viewpoint of potential environmentally nontoxic pink pigments. Thermal stabilities of the pigments were examined at 600, 900 and 1200 ºC. According to X–ray powder diffraction and Raman spectroscopy results, all obtained pigments were single–phase solid solutions of cerium oxide, independent of the concentration of dopants. The X–ray analysis showed that the crystallites were of nanometric dimensions, as recorded and by transmission electron microscopy analysis. Color characteristics of solid solutions, which depended on concentracion erbium ions and calcination temperature, and their position in the chromaticity diagram were studied by ultraviolet–visible spectrophotometry, which confirmed potential application of environmentally friendly pigments of desired color. The color efficiency of pigments was also evaluated by colorimetric analysis.

  15. Influence of temperature and dopant concentration on structural, morphological and optical properties of nanometric Ce1-xErxO2-δ (x = 0.05–0.20) as a pigment

    KAUST Repository

    Stojmenović, Marija; Milenković, Maja C.; Banković, Predrag T.; Zunic, Milan; Gulicovski, Jelena J.; Pantić, Jelena R.; Bošković, Snežana B.

    2015-01-01

    Ceramic pigments based on cerium oxide were synthesized by self–propagating room temperature method and their color properties were assessed from the viewpoint of potential environmentally nontoxic pink pigments. Thermal stabilities of the pigments were examined at 600, 900 and 1200 ºC. According to X–ray powder diffraction and Raman spectroscopy results, all obtained pigments were single–phase solid solutions of cerium oxide, independent of the concentration of dopants. The X–ray analysis showed that the crystallites were of nanometric dimensions, as recorded and by transmission electron microscopy analysis. Color characteristics of solid solutions, which depended on concentracion erbium ions and calcination temperature, and their position in the chromaticity diagram were studied by ultraviolet–visible spectrophotometry, which confirmed potential application of environmentally friendly pigments of desired color. The color efficiency of pigments was also evaluated by colorimetric analysis.

  16. Photoreflection investigations of the dopant activation in InP doped with beryllium ions

    International Nuclear Information System (INIS)

    Avakyants, L.P.; Bokov, P.Yu.; Chervyakov, A.V.

    2005-01-01

    The processes of the dopant activation in the InP crystals implanted with Be + ions (energy 100 keV, dose 10 13 cm -2 and subsequent thermal annealing during 10 s) have been studied by means of photoreflection spectroscopy. Spectral lines of the crystal InP were absent in the photoreflection spectra of the samples annealed at temperatures less then 400 Deg C. This fact is connected with the disordering of the crystal structure due to the ion implantation. In the temperature range 400-700 Deg C the lines from InP band gap (1.34 eV) and conductance band-spin-orbit splitting valence subband (1.44 eV) have been observed due to the recovery of the crystal structure. In the photoreflectance spectra of a 800 Deg C annealed sample the Franz-Keldysh oscillations have been observed, which can be an evidence in favour of the dopant activation. Carrier concentration calculated from the period of Franz-Keldysh oscillations was equal to 2.2 x 10 16 cm -3 [ru

  17. Modeling and sensitivity analysis on the transport of aluminum oxide nanoparticles in saturated sand: effects of ionic strength, flow rate, and nanoparticle concentration.

    Science.gov (United States)

    Rahman, Tanzina; Millwater, Harry; Shipley, Heather J

    2014-11-15

    Aluminum oxide nanoparticles have been widely used in various consumer products and there are growing concerns regarding their exposure in the environment. This study deals with the modeling, sensitivity analysis and uncertainty quantification of one-dimensional transport of nano-sized (~82 nm) aluminum oxide particles in saturated sand. The transport of aluminum oxide nanoparticles was modeled using a two-kinetic-site model with a blocking function. The modeling was done at different ionic strengths, flow rates, and nanoparticle concentrations. The two sites representing fast and slow attachments along with a blocking term yielded good agreement with the experimental results from the column studies of aluminum oxide nanoparticles. The same model was used to simulate breakthrough curves under different conditions using experimental data and calculated 95% confidence bounds of the generated breakthroughs. The sensitivity analysis results showed that slow attachment was the most sensitive parameter for high influent concentrations (e.g. 150 mg/L Al2O3) and the maximum solid phase retention capacity (related to blocking function) was the most sensitive parameter for low concentrations (e.g. 50 mg/L Al2O3). Copyright © 2014 Elsevier B.V. All rights reserved.

  18. Preparation and photovoltaic properties of CdS quantum dot-sensitized solar cell based on zinc tin mixed metal oxides.

    Science.gov (United States)

    Cao, Jiupeng; Zhao, Yifan; Zhu, Yatong; Yang, Xiaoyu; Shi, Peng; Xiao, Hongdi; Du, Na; Hou, Wanguo; Qi, Genggeng; Liu, Jianqiang

    2017-07-15

    The present study reports a new type of quantum dot sensitized solar cells (QDSSCs) using the zinc tin mixed metal oxides (MMO) as the anode materials, which were obtained from the layered double hydroxide (LDH) precursor. The successive ionic layer adsorption and reaction (SILAR) method is applied to deposit CdS quantum dots. The effects of sensitizing cycles on the performance of CdS QDSSC are studied. Scanning electron microscopy (SEM), Transmission electron microscope (TEM) and X-ray diffraction (XRD) are used to identify the surface profile and crystal structure of the mixed metal oxides anode. The photovoltaic performance of the QDSSC is studied by the electrochemical method. The new CdS QDSSC exhibits power conversion efficiency (PCE) up to 0.48% when the anode was sensitized for eight cycles. Copyright © 2017 Elsevier Inc. All rights reserved.

  19. Do intracellular thiol or peroxidase levels block radiation sensitization by nitrous oxide in some E. coli strains

    Energy Technology Data Exchange (ETDEWEB)

    Ewing, D.; Guilfoil, D.S.; Ohm, M.B. (Hahnemann Univ., Philadelphia, PA (USA). Dept. of Radiation Oncology and Nuclear Medicine)

    1991-01-01

    Although nitrous oxide (N{sub 2}O) is often a radiation sensitizer in procaryotic cells, it fails to sensitize some strains of bacteria, some yeast strains, and most eucaryotic cell lines. At present this inconsistency cannot be satisfactorily explained. The experiments here use eight strains of E. coli, some of which are not sensitized by N{sub 2}O, to test the hypotheses that N{sub 2}O's failure to sensitize might be based on high thiol content or on low peroxidase activity. Our data contradict those hypotheses. In addition, further data show that the strains not sensitized by N{sub 2}O contain no unique cellular component or compound which blocks damage from N{sub 2}O. (author).

  20. Pyrolysis synthesis of Zn{sub 2}SiO{sub 4}:Mn{sup 2+} phosphors – effect of fuel, flux and co-dopants

    Energy Technology Data Exchange (ETDEWEB)

    Sivakumar, V.; Lakshmanan, Arunachalam, E-mail: arunachalamlakshmanan@yahoo.com

    2014-01-15

    Green emitting α-Zn{sub 2}SiO{sub 4}:Mn{sup 2+} phosphors were made by pyrolysis route at 600 °C followed by sintering at a moderate temperature of 1000 °C for 1 h duration. The effects of different fuels (urea, citric acid, polyethylene glycol and glycine), flux materials (H{sub 3}BO{sub 3}, NH{sub 4}Cl, NH{sub 4}F, NH{sub 4}Br, BaCl{sub 2}, BaBr{sub 2}, CaF{sub 2} and BaF{sub 2}), divalant co-dopants (Ca{sup 2+}, Ba{sup 2+}, Mg{sup 2+} and Sr{sup 2+}), trivalent co-dopants (Al{sup 3+}, Y{sup 3+} and Gd{sup 3+}) and sintering temperature (800–1000 °C) on the photoluminescence (PL) efficiency of Zn{sub 2}SiO{sub 4}:Mn{sup 2+} were studied. Among the fuels, urea and among the flux, H{sub 3}BO{sub 3} gave a maximum broad band green PL emission peak at 525 nm on excitation at 254 nm. Divalent co-dopants improved the PL intensity much more than the trivalent co-dopants used. Highest PL efficiency was observed with Sr{sup 2+} co-doped Zn{sub 2}SiO{sub 4}:Mn{sup 2+} sintered at 1000 °C in reducing atmosphere which was 20% higher than that of the commercial Zn{sub 2}SiO{sub 4}:Mn{sup 2+}. The formation of a single crystalline phase of willemite structure in the α-Zn{sub 2}SiO{sub 4}:Mn{sup 2+} samples synthesized was confirmed by powder XRD measurements. -- Highlights: • Zn{sub 2}SiO{sub 4}:Mn{sup 2+} green phosphors were made by pyrolysis route. • Effect of fuel, flux and co dopant on PL intensity. • Enhancement in luminescence with divalent co-dopants, notably Sr. • PL efficiency 20% higher than that of the commercial phosphor. • XRD confirm single phase willemite structure of Zn{sub 2}SiO{sub 4}:Mn{sup 2+}.

  1. Chemical vapour deposition of vanadium oxide thermochromic thin films

    Science.gov (United States)

    Piccirillo, Clara

    Thermochromic materials change optical properties, such as transmittance or reflectance, with a variation in temperature. An ideal intelligent (smart) material will allow solar radiation in through a window in cold conditions, but reflect that radiation in warmer conditions. The variation in the properties is often associated with a phase change, which takes place at a definite temperature, and is normally reversible. Such materials are usually applied to window glass as thin films. This thesis presents the work on the development of thermochromic vanadium (IV) oxide (VO2) thin films - both undoped and doped with tungsten, niobium and gold nanoparticles - which could be employed as solar control coatings. The films were deposited using Chemical Vapour Deposition (CVD), using improved Atmospheric Pressure (APCVD), novel Aerosol Assisted (AACVD) and novel hybrid AP/AACVD techniques. The effects of dopants on the metalto- semiconductor transition temperature and transmittance/reflectance characteristics were also investigated. This work significantly increased the understanding of the mechanisms behind thermochromic behaviour, and resulted in thermochromic materials based on VO2 with greatly improved properties.

  2. Probing the electrical properties of highly-doped Al:ZnO nanowire ensembles

    KAUST Repository

    Noriega, Rodrigo; Rivnay, Jonathan; Goris, Ludwig; Kälblein, Daniel; Klauk, Hagen; Kern, Klaus; Thompson, Linda M.; Palke, Aaron C.; Stebbins, Jonathan F.; Jokisaari, Jacob R.; Kusinski, Greg; Salleo, Alberto

    2010-01-01

    The analysis of transparent conducting oxide nanostructures suffers from a lack of high throughput yet quantitatively sensitive set of analytical techniques that can properly assess their electrical properties and serve both as characterization and diagnosis tools. This is addressed by applying a comprehensive set of characterization techniques to study the electrical properties of solution-grown Al-doped ZnO nanowires as a function of composition from 0 to 4 at. % Al:Zn. Carrier mobility and charge density extracted from sensitive optical absorption measurements are in agreement with those extracted from single-wire field-effect transistor devices. The mobility in undoped nanowires is 28 cm2 /V s and decreases to ∼14 cm2 /V s at the highest doping density, though the carrier density remains approximately constant (1020 cm-3) due to limited dopant activation or the creation of charge-compensating defects. Additionally, the local geometry of the Al dopant is studied by nuclear magnetic resonance, showing the occupation of a variety of dopant sites. © 2010 American Institute of Physics.

  3. Thermodynamic modelling of fast dopant diffusion in Si

    Science.gov (United States)

    Saltas, V.; Chroneos, A.; Vallianatos, F.

    2018-04-01

    In the present study, nickel and copper fast diffusion in silicon is investigated in the framework of the cBΩ thermodynamic model, which connects point defect parameters with the bulk elastic and expansion properties. All the calculated point defect thermodynamic properties (activation Gibbs free energy, activation enthalpy, activation entropy, and activation volume) exhibit temperature dependence due to the non-linear anharmonic behavior of the isothermal bulk modulus of Si. Calculated activation enthalpies (0.15-0.16 eV for Ni and 0.17-0.19 eV for Cu) are in agreement with the reported experimental results. Small values of calculated activation volumes for both dopants (˜4% of the mean atomic volume) are consistent with the interstitial diffusion of Ni and Cu in Si.

  4. Selectivity improvement of positive photoionization ion mobility spectrometry for rapid detection of organophosphorus pesticides by switching dopant concentration.

    Science.gov (United States)

    Zhou, Qinghua; Li, Jia; Wang, Bin; Wang, Shuang; Li, Haiyang; Chen, Jinyuan

    2018-01-01

    Ion mobility spectrometry (IMS) opened a potential avenue for the rapid detection of organophosphorus pesticides (OPPs), though an improved selectivity of stand-alone IMS was still in high demand. In this study, a stand-alone positive photoionization ion mobility spectrometry (PP-IMS) apparatus was constructed for the rapid detection of OPPs with acetone as dopant. The photoionization of acetone molecules was induced by the ultraviolet irradiation to produce the reactant ions (Ac) 2 H + , which were employed to ionize the OPPs including fenthion, imidan, phosphamidon, dursban, dimethoate and isocarbophos via the proton transfer reaction. Due to the difference in proton affinity, the tested OPPs exhibited the different dopant-dependent manners. Based on this observation, the switching of dopant concentration was implemented to improve the selectivity of PP-IMS for OPPs detection. For instance, a mixture of fenthion, dursban and dimethoate was tested. By switching the concentration of doped acetone from 0.07 to 2.33 to 19.94mgL -1 , the ion peaks of fenthion and dursban were inhibited in succession, achieving the selective detection of dimethoate at last. In addition, another mixture of imidan and phosphamidon was initially detected by PP-IMS with a dose of 0.07mgL -1 acetone, indicating that their ion peaks were severely overlapped; when the concentration of doped acetone was switched to 19.94mgL -1 , the inhibition of imidan signals promised the accurate identification of phosphamidon in mixture. Finally, the PP-IMS in combination of switching dopant concentration was applied to detect the mixed fenthion, dursban and dimethoate in Chinese cabbage, demonstrating the applicability of proposed method to real samples. Copyright © 2017. Published by Elsevier B.V.

  5. Determination of the dopant weight fraction in polyaniline films using a quartz-crystal microbalance

    Czech Academy of Sciences Publication Activity Database

    Ayad, M. M.; Zaki, E. A.; Stejskal, Jaroslav

    2007-01-01

    Roč. 515, č. 23 (2007), s. 8381-8385 ISSN 0040-6090 R&D Projects: GA AV ČR IAA4050313 Institutional research plan: CEZ:AV0Z40500505 Keywords : dopant weight fraction * polyaniline * polyaniline film Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.693, year: 2007

  6. Portable nitrous oxide sensor for understanding agricultural and soil emissions

    Energy Technology Data Exchange (ETDEWEB)

    Stanton, Alan [Southwest Sciences, Inc., Santa Fe, NM (United States); Zondlo, Mark [Princeton Univ., NJ (United States); Gomez, Anthony [Southwest Sciences, Inc., Santa Fe, NM (United States); Pan, Da [Princeton Univ., NJ (United States)

    2017-02-27

    Nitrous oxide (N2O) is the third most important greenhouse gas (GHG,) with an atmospheric lifetime of ~114 years and a global warming impact ~300 times greater than that of carbon dioxide. The main cause of nitrous oxide’s atmospheric increase is anthropogenic emissions, and over 80% of the current global anthropogenic flux is related to agriculture, including associated land-use change. An accurate assessment of N2O emissions from agriculture is vital not only for understanding the global N2O balance and its impact on climate but also for designing crop systems with lower GHG emissions. Such assessments are currently hampered by the lack of instrumentation and methodologies to measure ecosystem-level fluxes at appropriate spatial and temporal scales. Southwest Sciences and Princeton University are developing and testing new open-path eddy covariance instrumentation for continuous and fast (10 Hz) measurement of nitrous oxide emissions. An important advance, now being implemented, is the use of new mid-infrared laser sources that enable the development of exceptionally low power (<10 W) compact instrumentation that can be used even in remote sites lacking in power. The instrumentation will transform the ability to measure and understand ecosystem-level nitrous oxide fluxes. The Phase II results included successful extended field testing of prototype flux instruments, based on quantum cascade lasers, in collaboration with Michigan State University. Results of these tests demonstrated a flux detection limit of 5 µg m-2 s-1 and showed excellent agreement and correlation with measurements using chamber techniques. Initial tests of an instrument using an interband cascade laser (ICL) were performed, verifying that an order of magnitude reduction in instrument power requirements can be realized. These results point toward future improvements and testing leading to introduction of a commercial open path instrument for N2O flux measurements that is truly portable and

  7. Enhanced performance of dye-sensitized solar cells based on organic dopant incorporated PVDF-HFP/PEO polymer blend electrolyte with g-C3N4/TiO2 photoanode

    International Nuclear Information System (INIS)

    Senthil, R.A.; Theerthagiri, J.; Madhavan, J.; Murugan, K.; Arunachalam, Prabhakarn; Arof, A.K.

    2016-01-01

    This work describes the effect of 2-aminopyrimidine (2-APY) on poly(vinylidinefluoride-co-hexafluoropropylene) (PVDF-HFP)/polyethylene oxide (PEO) blend polymer electrolyte along with binary iodide salts (tetrabutylammonium iodide (TBAI) and potassium iodide (KI)) and iodine (I 2 ) were studied for enhancing the efficiency of the dye-sensitized solar cells (DSSCs) consisting of g-C 3 N 4 /TiO 2 composite as photoanode. The g-C 3 N 4 was synthesized from low cost urea by thermal condensation method. It was used as a precursor to synthesize the various weight percentage ratios (5%, 10% and 15%) of g-C 3 N 4 /TiO 2 composites by wet-impregnation method. The pure and 2-APY incorporated PVDF-HFP/PEO polymer blend electrolytes were arranged by wet chemical process (casting method) using DMF as a solvent. The synthesized g-C 3 N 4 /TiO 2 composites and polymer blend electrolytes were studied and analyzed by Fourier transform infrared (FT-IR) spectroscopy, X-ray diffractometer (XRD) and scanning electron microscopy (SEM). The ionic conductivity values of the pure and 2-APY incorporated PVDF-HFP/PEO blend electrolytes were estimated to be 4.53×10 −5 and 1.87×10 −4 Scm −1 respectively. The UV–vis absorption spectroscopy was carried out for the pure and different wt% of g-C 3 N 4 /TiO 2 composites coated FTO films after N3 dye-sensitization. The 10 wt% g-C 3 N 4 /TiO 2 composite film showed a maximum absorption compared to the others. The DSSC assembled with 10 wt% g-C 3 N 4 /TiO 2 as photoanode using the pure polymer blend electrolyte exhibited a power conversion efficiency (PCE) of 3.17% , which was superior than that of DSSC based pure TiO 2 (2.46%). However, the PCE was increased to 4.73% for the DSSC assembled using 10 wt% g-C 3 N 4 /TiO 2 as photoanode with 2-APY incorporated polymer blend electrolyte. Hence, the present study is a successful attempt to provide a new pathway to enhance the performance of DSSCs. - Graphical abstract: In this study, the g-C 3 N

  8. Improving stability of photoluminescence of ZnSe thin films grown by molecular beam epitaxy by incorporating Cl dopant

    International Nuclear Information System (INIS)

    Wang, J. S.; Shen, J. L.; Chen, W. J.; Tsai, Y. H.; Wang, H. H.; Yang, C. S.; Chen, R. H.; Tsai, C. D.

    2011-01-01

    This investigation studies the effect of chlorine (Cl) dopant in ZnSe thin films that were grown by molecular beam epitaxy on their photoluminescence (PL) and the stability thereof. Free excitonic emission was observed at room-temperature in the Cl-doped sample. Photon irradiation with a wavelength of 404 nm and a power density of 9.1 W/cm 2 has a much stronger effect on PL degradation than does thermal heating to a temperature of 150 deg. C. Additionally, this study shows that the generation of nonradiative centers by both photon irradiation and thermal heating can be greatly inhibited by incorporating Cl dopant.

  9. Altering properties of cerium oxide thin films by Rh doping

    International Nuclear Information System (INIS)

    Ševčíková, Klára; Nehasil, Václav; Vorokhta, Mykhailo; Haviar, Stanislav; Matolín, Vladimír

    2015-01-01

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO x thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO x thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce 4+ and Ce 3+ and rhodium occurs in two oxidation states, Rh 3+ and Rh n+ . We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO x thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO x thin films leads to preparing materials with different properties

  10. Fabrication of Polymeric Antireflection Film Manufactured by Anodic Aluminum Oxide Template on Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Jenn-Kai Tsai

    2017-03-01

    Full Text Available In this study, high energy conversion efficient dye-sensitized solar cells (DSSCs were successfully fabricated by attaching a double anti-reflection (AR layer, which is composed of a subwavelength moth-eye structured polymethyl methacrylate (PMMA film and a polydimethylsiloxane (PDMS film. An efficiency of up to 6.79% was achieved. The moth-eye structured PMMA film was fabricated by using an anodic aluminum oxide (AAO template which is simple, low-cost and scalable. The nano-pattern of the AAO template was precisely reproduced onto the PMMA film. The photoanode was composed of Titanium dioxide (TiO2 nanoparticles (NPs with a diameter of 25 nm deposited on the fluorine-doped tin oxide (FTO glass substrate and the sensitizer N3. The double AR layer was proved to effectively improve the short-circuit current density (JSC and conversion efficiency from 14.77 to 15.79 mA/cm2 and from 6.26% to 6.79%, respectively.

  11. Single-layer graphene/titanium oxide cubic nanorods array/FTO heterojunction for sensitive ultraviolet light detection

    Science.gov (United States)

    Liang, Feng-Xia; Wang, Jiu-Zhen; Wang, Yi; Lin, Yi; Liang, Lin; Gao, Yang; Luo, Lin-Bao

    2017-12-01

    In this study, we report on the fabrication of a sensitive ultraviolet photodetector (UVPD) by simply transferring single-layer graphene (SLG) on rutile titanium oxide cubic nanorod (TiO2NRs) array. The cubic TiO2NRs array with strong light trapping effect was grown on fluorine-doped tin oxide (FTO) glass through a hydrothermal approach. The as-assembled UVPD was very sensitive to UV light illumination, but virtually blind to white light illumination. The responsivity and specific detectivity were estimated to be 52.1 A/W and 4.3 × 1012 Jones, respectively. What is more, in order to optimize device performance of UVPD, a wet-chemistry treatment was then employed to reduce the high concentration of defects in TiO2NRs during hydrothermal growth. It was found that the UVPD after treatment showed obvious decrease in sensitivity, but the response speed (rise time: 80 ms, fall time: 160 ms) and specific detectivity were substantially increased. It is also found that the speicific detectivity was imporoved by six-fold to 3.2 × 1013 Jones, which was the best result in comparison with previously reported TiO2 nanostructures or thin film based UVPDs. This totality of this study shows that the present SLG/TiO2NR/FTO UVPD may find potential application in future optoelectronic devices and systems.

  12. Optical acetone vapor sensors based on chiral nematic liquid crystals and reactive chiral dopants

    NARCIS (Netherlands)

    Cachelin, P.; Green, J.P.; Peijs, T.; Heeney, M.; Bastiaansen, C.W.M.

    2016-01-01

    Accurate monitoring of exposure to organic vapors, such as acetone, is an important part of maintaining a safe working environment and adhering to long- and short-term exposure limits. Here, a novel acetone vapor detection system is described based on the use of a reactive chiral dopant in a nematic

  13. Preparation of an antibacterial, hydrophilic and photocatalytically active polyacrylic coating using TiO2 nanoparticles sensitized by graphene oxide.

    Science.gov (United States)

    Nosrati, Rahimeh; Olad, Ali; Shakoori, Sahar

    2017-11-01

    In recent years more attentions have been paid for preparation of coatings with self-cleaning and antibacterial properties. These properties allow the surface to maintain clean and health over long times without any need to cleaning or disinfection. Acrylic coatings are widely used on various surfaces such as automotive, structural and furniture which their self-cleaning and antibacterial ability is very important. The aim of this work is the preparation of a polyacrylic based self-cleaning and antibacterial coating by the modification of TiO 2 as a coating additive. TiO 2 nanoparticles were sensitized to the visible light irradiation using graphene oxide through the preparation of TiO 2 /graphene oxide nanocomposite. Graphene oxide was prepared via a modified Hummers method. TiO 2 /graphene oxide nanocomposite was used as additive in a polyacrylic coating formulation. Hydrophilicity, photocatalytic and antibacterial activities as well as coating stability were evaluated for TiO 2 /graphene oxide modified polyacrylic coating and compared with that of pristine TiO 2 modified and unmodified polyacrylic coatings. TiO 2 /graphene oxide nanocomposite and polyacrylic coating modified by TiO 2 /graphene oxide additive were characterized using FT-IR, UV-Vis, XRD, and FESEM techniques. The effect of TiO 2 /graphene oxide composition and its percent in the coating formulation was evaluated on the polyacrylic coating properties. Results showed that polyacrylic coating having 3% W TiO 2 /graphene oxide nanocomposite additive with TiO 2 to graphene oxide ratio of 100:20 is the best coating considering most of beneficial features such as high photodecolorization efficiency of organic dye contaminants, high hydrophilicity, and stability in water. According to the results, TiO 2 is effectively sensitized by graphene oxide and the polyacrylic coating modified by TiO 2 /graphene oxide nanocomposite shows good photocatalytic activity under visible light irradiation. Copyright © 2017

  14. Synthesis and characterization of pure and (Ce, Zr, Ag) doped mesoporous CuO-Fe{sub 2}O{sub 3} as highly efficient and stable nanocatalysts for CO oxidation at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Said, Abd El-Aziz A., E-mail: aasaid55@yahoo.com; Abd El-Wahab, Mohamed M.M.; Goda, Mohamed N.

    2016-12-30

    Highlights: • Highly active and stable Fe-Cu mixed oxides were prepared by co-precipitation method. • Addition of CuO to Fe{sub 2}O{sub 3} increases the chemisorbed oxygen, the conductivity and S{sub BET}. • Activation energy of CO oxidation significantly decreased via doping with foreign ions. - Abstract: A series of single and mixed oxide nanocatalysts of mesoporous CuO-Fe{sub 2}O{sub 3} with different CuO contents (1–50 wt.%) were prepared by a co-precipitation method and further promoted by trace amounts of CeO{sub 2}, ZrO{sub 2} and Ag{sub 2}O (0.1–0.5 wt.%) dopants. The original and calcined catalysts were characterized by TG, DTA, XRD, TEM, VSM, N{sub 2} sorption analysis, surface chemisorbed oxygen and DC electrical conductivity measurements. The catalytic performance of these nanocatalysts toward CO oxidation was studied using a conventional fixed bed flow type reactor. The results revealed that the addition of 1–20 wt.% CuO to Fe{sub 2}O{sub 3} monotonically increases the specific surface area, the amount of surface chemisorbed oxygen, electrical conductivity and catalytic activity of the nanocatalysts. In addition, the catalytic activity indicated that Fe-Cu mixed oxide nanocatalyst promoted with the three dopants (CeO{sub 2}, ZrO{sub 2} and Ag{sub 2}O) exhibited the highest catalytic activity with a total conversion of CO into CO{sub 2} at 100 °C. Moreover, the activation energy of CO oxidation decreased from 38.4 to 23.1 kJmol{sup −1} upon treating the catalyst containing 20 wt.% CuO with the three dopants. Finally the effects of various operational parameters were also studied.

  15. Influence of dopant segregation on the work function and electrical properties of Ge-doped in comparison to Sn-doped In{sub 2}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoyer, Karoline L.; Hubmann, Andreas H.; Klein, Andreas [Surface Science Division, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

    2017-02-15

    Ge-doped In{sub 2}O{sub 3} thin films prepared by magnetron sputtering are studied using photoelectron spectroscopy and Hall effect measurements. Carrier conductivities of up to 8.35 x 10{sup 3} S cm{sup -1} and carrier mobilities of up to 57 cm{sup 2} V{sup -1}s{sup -1} are observed. The surface Ge concentration is enhanced by a factor of 2-3 compared to the concentration in the interior of the films. The surface Ge concentration increases with more oxidizing deposition conditions, in opposite to what has been reported for Sn-doped In{sub 2}O{sub 3}. Ge-doped In{sub 2}O{sub 3} films exhibit higher work functions as compared to Sn-doped films, in particular at oxidizing conditions. This is attributed to the formation of a GeO{sub 2} surface phase. While segregation of Sn reduces the carrier mobility due to grain boundary scattering, Ge segregation does not show such an effect. The differences are attributed to the different oxidation states of the segregated dopants, in agreement with the observed dependence of segregation on oxygen activity. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Clinical Relevance of Biomarkers of Oxidative Stress

    DEFF Research Database (Denmark)

    Frijhoff, Jeroen; Winyard, Paul G; Zarkovic, Neven

    2015-01-01

    SIGNIFICANCE: Oxidative stress is considered to be an important component of various diseases. A vast number of methods have been developed and used in virtually all diseases to measure the extent and nature of oxidative stress, ranging from oxidation of DNA to proteins, lipids, and free amino ac....... The vast diversity in oxidative stress between diseases and conditions has to be taken into account when selecting the most appropriate biomarker.......SIGNIFICANCE: Oxidative stress is considered to be an important component of various diseases. A vast number of methods have been developed and used in virtually all diseases to measure the extent and nature of oxidative stress, ranging from oxidation of DNA to proteins, lipids, and free amino...... acids. RECENT ADVANCES: An increased understanding of the biology behind diseases and redox biology has led to more specific and sensitive tools to measure oxidative stress markers, which are very diverse and sometimes very low in abundance. CRITICAL ISSUES: The literature is very heterogeneous...

  17. Self-limited kinetics of electron doping in correlated oxides

    International Nuclear Information System (INIS)

    Chen, Jikun; Zhou, You; Jiang, Jun; Shi, Jian; Ramanathan, Shriram; Middey, Srimanta; Chakhalian, Jak; Chen, Nuofu; Chen, Lidong; Shi, Xun; Döbeli, Max

    2015-01-01

    Electron doping by hydrogenation can reversibly modify the electrical properties of complex oxides. We show that in order to realize large, fast, and reversible response to hydrogen, it is important to consider both the electron configuration on the transition metal 3d orbitals, as well as the thermodynamic stability in nickelates. Specifically, large doping-induced resistivity modulations ranging several orders of magnitude change are only observed for rare earth nickelates with small ionic radii on the A-site, in which case both electron correlation effects and the meta-stability of Ni 3+ are important considerations. Charge doping via metastable incorporation of ionic dopants is of relevance to correlated oxide-based devices where advancing approaches to modify the ground state electronic properties is an important problem

  18. High thermoelectric figure of merit by resonant dopant in half-Heusler alloys

    Science.gov (United States)

    Chen, Long; Liu, Yamei; He, Jian; Tritt, Terry M.; Poon, S. Joseph

    2017-06-01

    Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in enhancing the ZT of n-type half-Heusler alloys based on Hf0.6Zr0.4NiSn0.995Sb0.005. The V doping was found to increase the Seebeck coefficient in the temperature range 300-1000 K, consistent with a resonant doping scheme. In contrast, Nb and Ta act as normal n-type dopants, as evident by the systematic decrease in electrical resistivity and Seebeck coefficient. The combination of enhanced Seebeck coefficient due to the presence of V resonant states and the reduced thermal conductivity has led to a state-of-the-art ZT of 1.3 near 850 K in n-type (Hf0.6Zr0.4)0.99V0.01NiSn0.995Sb0.005 alloys.

  19. Power Conversion Efficiency of Arylamine Organic Dyes for Dye-Sensitized Solar Cells (DSSCs Explicit to Cobalt Electrolyte: Understanding the Structural Attributes Using a Direct QSPR Approach

    Directory of Open Access Journals (Sweden)

    Supratik Kar

    2016-12-01

    Full Text Available Post silicon solar cell era involves light-absorbing dyes for dye-sensitized solar systems (DSSCs. Therefore, there is great interest in the design of competent organic dyes for DSSCs with high power conversion efficiency (PCE to bypass some of the disadvantages of silicon-based solar cell technologies, such as high cost, heavy weight, limited silicon resources, and production methods that lead to high environmental pollution. The DSSC has the unique feature of a distance-dependent electron transfer step. This depends on the relative position of the sensitized organic dye in the metal oxide composite system. In the present work, we developed quantitative structure-property relationship (QSPR models to set up the quantitative relationship between the overall PCE and quantum chemical molecular descriptors. They were calculated from density functional theory (DFT and time-dependent DFT (TD-DFT methods as well as from DRAGON software. This allows for understanding the basic electron transfer mechanism along with the structural attributes of arylamine-organic dye sensitizers for the DSSCs explicit to cobalt electrolyte. The identified properties and structural fragments are particularly valuable for guiding time-saving synthetic efforts for development of efficient arylamine organic dyes with improved power conversion efficiency.

  20. High-resolution imaging of redox signaling in live cells through an oxidation-sensitive yellow fluorescent protein

    DEFF Research Database (Denmark)

    Maulucci, Giuseppe; Labate, Valentina; Mele, Marina

    2008-01-01

    We present the application of a redox-sensitive mutant of the yellow fluorescent protein (rxYFP) to image, with elevated sensitivity and high temporal and spatial resolution, oxidative responses of eukaryotic cells to pathophysiological stimuli. The method presented, based on the ratiometric...... quantitation of the distribution of fluorescence by confocal microscopy, allows us to draw real-time "redox maps" of adherent cells and to score subtle changes in the intracellular redox state, such as those induced by overexpression of redox-active proteins. This strategy for in vivo imaging of redox...

  1. Proteomic identification of early salicylate- and flg22-responsive redox-sensitive proteins in Arabidopsis

    KAUST Repository

    Liu, Peng

    2015-02-27

    Accumulation of reactive oxygen species (ROS) is one of the early defense responses against pathogen infection in plants. The mechanism about the initial and direct regulation of the defense signaling pathway by ROS remains elusive. Perturbation of cellular redox homeostasis by ROS is believed to alter functions of redox-sensitive proteins through their oxidative modifications. Here we report an OxiTRAQ-based proteomic study in identifying proteins whose cysteines underwent oxidative modifications in Arabidopsis cells during the early response to salicylate or flg22, two defense pathway elicitors that are known to disturb cellular redox homeostasis. Among the salicylate- and/or flg22-responsive redox-sensitive proteins are those involved in transcriptional regulation, chromatin remodeling, RNA processing, post-translational modifications, and nucleocytoplasmic shuttling. The identification of the salicylate-/flg22-responsive redox-sensitive proteins provides a foundation from which further study can be conducted toward understanding biological significance of their oxidative modifications during the plant defense response.

  2. Spectroscopic diagnostics of NIF ICF implosions using line ratios of Kr dopant in the ignition capsule

    Science.gov (United States)

    Dasgupta, Arati; Ouart, Nicholas; Giuiani, John; Clark, Robert; Schneider, Marilyn; Scott, Howard; Chen, Hui; Ma, Tammy

    2017-10-01

    X ray spectroscopy is used on the NIF to diagnose the plasma conditions in the ignition target in indirect drive ICF implosions. A platform is being developed at NIF where small traces of krypton are used as a dopant to the fuel gas for spectroscopic diagnostics using krypton line emissions. The fraction of krypton dopant was varied in the experiments and was selected so as not to perturb the implosion. Our goal is to use X-ray spectroscopy of dopant line ratios produced by the hot core that can provide a precise measurement of electron temperature. Simulations of the krypton spectra using a 1 in 104 atomic fraction of krypton in direct-drive exploding pusher with a range of electron temperatures and densities show discrepancies when different atomic models are used. We use our non-LTE atomic model with a detailed fine-structure level atomic structure and collisional-radiative rates to investigate the krypton spectra at the same conditions. Synthetic spectra are generated with a detailed multi-frequency radiation transport scheme from the emission regions of interest to analyze the experimental data with 0.02% Kr concentration and compare and contrast with the existing simulations at LLNL. Work supported by DOE/NNSA; Part of this work was also done under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract No. DE-AC52-07NA27344.

  3. Spherulitic copper–copper oxide nanostructure-based highly sensitive nonenzymatic glucose sensor

    Directory of Open Access Journals (Sweden)

    Das G

    2015-08-01

    Full Text Available Gautam Das, Thao Quynh Ngan Tran, Hyon Hee Yoon Department of Chemical and Biological Engineering, Gachon University, Seongnam, Republic of South Korea Abstract: In this work, three different spherulitic nanostructures Cu–CuOA, Cu–CuOB, and Cu–CuOC were synthesized in water-in-oil microemulsions by varying the surfactant concentration (30 mM, 40 mM, and 50 mM, respectively. The structural and morphological characteristics of the Cu–CuO nanostructures were investigated by ultraviolet–visible (UV–vis spectroscopy, X-ray diffraction, scanning electron microscopy, and high-resolution transmission electron microscopy techniques. The synthesized nanostructures were deposited on multiwalled carbon nanotube (MWCNT-modified indium tin oxide (ITO electrodes to fabricate a nonenzymatic highly sensitive amperometric glucose sensor. The performance of the ITO/MWCNT/Cu–CuO electrodes in the glucose assay was examined by cyclic voltammetry and chronoamperometric studies. The sensitivity of the sensor varied with the spherulite type; Cu–CuOA, Cu–CuOB, and Cu–CuOC exhibited a sensitivity of 1,229, 3,012, and 3,642 µA mM-1·cm-2, respectively. Moreover, the linear range is dependent on the structure types: 0.023–0.29 mM, 0.07–0.8 mM, and 0.023–0.34 mM for Cu–CuOA, Cu–CuOB, and Cu–CuOC, respectively. An excellent response time of 3 seconds and a low detection limit of 2 µM were observed for Cu–CuOB at an applied potential of +0.34 V. In addition, this electrode was found to be resistant to interference by common interfering agents such as urea, cystamine, l-ascorbic acid, and creatinine. The high performance of the Cu–CuO spherulites with nanowire-to-nanorod outgrowths was primarily due to the high surface area and stability, and good three-dimensional structure. Furthermore, the ITO/MWCNT/Cu–CuOB electrode applied to real urine and serum sample showed satisfactory performance. Keywords: copper oxide, multiwalled

  4. Rare-Earth Oxide Ion (Tm3+, Ho3+, and U3+) Doped Glasses and Fibres for 1.8 to 4 Micrometer Coherent and Broadband Sources

    Science.gov (United States)

    2006-07-24

    oxide ( TeO2 ) , fluorine- containing silicate (SiOF2) and germanate (GeOF2) glass hosts for each dopant by characterising the spectroscopic properties...Earth Oxide Ion (Tm3+, Ho3+, And U3+) Doped Glasses And Fibres For 1.8 To 4 Micrometer Coherent And Broadband Sources 5c. PROGRAM ELEMENT NUMBER 5d...Rare-earth oxide ion (Tm3+, Ho3+, and U3+) doped glasses and fibres for 1.8 to 4 micrometer coherent and broadband sources Report prepared

  5. DIP and DIP + 2 as glutathione oxidants and radiation sensitizers in cultured Chinese hamster cells

    International Nuclear Information System (INIS)

    Harris, J.W.; Power, J.A.; Kosower, N.S.; Kosower, E.M.

    1975-01-01

    Two diamide analogues, diazene dicarboxylic acid bis (N'-methyl-piperazide) or DIP, and its bis-N'-methyl iodide salt, or DIP + 2, were tested for their ability to penetrate cultured Chinese hamster cells and oxidize intracellular glutathione. DIP penetrated the cells at a reasonable rate at 18 0 C, 160 nmoles being required to oxidize the endogenous glutathione of 2 x 10 6 cells, but it penetrated very slowly at 0 0 C. DIP + 2 did not effectively oxidize glutathione in Chinese hamster cells, possibly because it did not enter the cels. DIP became toxic after about 10 min of exposure, but its toxicity could be moderated by using anoxic conditions. DIP, but not DIP + 2, sensitized anoxic Chinese hamster cells to X-radiation by a factor of 1.5, an effect that was due entirely to removal of the shoulder from the survival curve. (author)

  6. SiO2 and ZnO dopants in three-dimensionally printed tricalcium phosphate bone tissue engineering scaffolds enhance osteogenesis and angiogenesis in vivo.

    Science.gov (United States)

    Fielding, Gary; Bose, Susmita

    2013-11-01

    Calcium phosphate (CaP) scaffolds with three-dimensionally-interconnected pores play an important role in mechanical interlocking and biological fixation in bone implant applications. CaPs alone, however, are only osteoconductive (able to guide bone growth). Much attention has been given to the incorporation of biologics and pharmacologics to add osteoinductive (able to cause new bone growth) properties to CaP materials. Because biologics and pharmacologics are generally delicate compounds and also subject to increased regulatory scrutiny, there is a need to investigate alternative methods to introduce osteoinductivity to CaP materials. In this study silica (SiO2) and zinc oxide (ZnO) have been incorporated into three-dimensional printed β-tricalcium phosphate (β-TCP) scaffolds to investigate their potential to trigger osteoinduction in vivo. Silicon and zinc are trace elements that are common in bone and have also been shown to have many beneficial properties, from increased bone regeneration to angiogenesis. Implants were placed in bicortical femur defects introduced to a murine model for up to 16 weeks. The addition of dopants into TCP increased the capacity for new early bone formation by modulating collagen I production and osteocalcin production. Neovascularization was found to be up to three times more than the pure TCP control group. The findings from this study indicate that the combination of SiO2 and ZnO dopants in TCP may be a viable alternative to introducing osteoinductive properties to CaPs. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  7. Efficient red organic light-emitting diode sensitized by a phosphorescent Ir compound

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.R. [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); You, H. [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Tang, H. [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China); Ding, G.H. [Institute of Advanced Materials and Fine Chemicals, East China University of Science and Technology, Shanghai 200237 (China); Ma, D.G. [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of the Chinese Academy of Sciences, Changchun, Jilin 130022 (China); Tian, H. [Institute of Advanced Materials and Fine Chemicals, East China University of Science and Technology, Shanghai 200237 (China); Sun, R.G. [School of Material Science and Engineering, Shanghai University, Jiading, Shanghai 201800 (China)], E-mail: runguangsun@126.com

    2008-01-15

    The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq{sub 3}) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyra n (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N',C{sup 4}) (acetyl acetonate) (Ir(C6){sub 2}(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4',4''-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4' diamine (NPB) (40 nm)/Alq{sub 3}:DCJTB (0.7 wt%):Ir(C6){sub 2}(acac) (0.3 wt%) (40 nm)/Alq{sub 3} (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8{+-}1) cd/A from 0.1 to 20,000 cd/m{sup 2} and the Commission International d'Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6){sub 2}(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.

  8. Cellular Automata Modelling of Photo-Induced Oxidation Processes in Molecularly Doped Polymers

    Directory of Open Access Journals (Sweden)

    David M. Goldie

    2016-11-01

    Full Text Available The possibility of employing cellular automata (CA to model photo-induced oxidation processes in molecularly doped polymers is explored. It is demonstrated that the oxidation dynamics generated using CA models exhibit stretched-exponential behavior. This dynamical characteristic is in general agreement with an alternative analysis conducted using standard rate equations provided the molecular doping levels are sufficiently low to prohibit the presence of safe-sites which are impenetrable to dissolved oxygen. The CA models therefore offer the advantage of exploring the effect of dopant agglomeration which is difficult to assess from standard rate equation solutions. The influence of UV-induced bleaching or darkening upon the resulting oxidation dynamics may also be easily incorporated into the CA models and these optical effects are investigated for various photo-oxidation product scenarios. Output from the CA models is evaluated for experimental photo-oxidation data obtained from a series of hydrazone-doped polymers.

  9. Highly sensitive uric acid biosensor based on individual zinc oxide micro/nanowires

    International Nuclear Information System (INIS)

    Zhao, Yanguang; Yan, Xiaoqin; Kang, Zhuo; Lin, Pei; Fang, Xiaofei; Lei, Yang; Ma, Siwei; Zhang, Yue

    2013-01-01

    We describe the use of individual zinc oxide (ZnO) micro/nanowires in an electrochemical biosensor for uric acid. The wires were synthesized by chemical vapor deposition and possess uniform morphology and high crystallinity as revealed by scanning electron microscopy, X-ray diffraction, and photoluminescence studies. The enzyme uricase was then immobilized on the surface of the ZnO micro/nanowires by physical adsorption, and this was proven by Raman spectroscopy and fluorescence microscopy. The resulting uric acid biosensor undergoes fast electron transfer between the active site of the enzyme and the surface of the electrode. It displays high sensitivity (89.74 μA cm −2 mM −1 ) and a wide linear analytical range (between 0.1 mM and 0.59 mM concentrations of uric acid). This study also demonstrates the potential of the use of individual ZnO micro/nanowires for the construction of highly sensitive nano-sized biosensors. (author)

  10. Dopant-Modulating Mechanism of Lithium Adsorption and Diffusion at the Graphene /Li2S Interface

    Science.gov (United States)

    Guo, Lichao; Li, Jiajun; Wang, Huayu; Zhao, Naiqin; Shi, Chunsheng; Ma, Liying; He, Chunnian; He, Fang; Liu, Enzuo

    2018-02-01

    Graphene modification is one of the most effective routes to enhance the electrochemical properties of the transition-metal sulfide anode for Li-ion batteries and the Li2S cathode for Li-S batteries. Boron, nitrogen, oxygen, phosphorus, and sulfur doping greatly affect the electrochemical properties of Li2S /graphene . Here, we investigate the interfacial binding energy, lithium adsorption energy, interface diffusion barrier, and electronic structure by first-principles calculations to unveil the diverse effects of different dopants during interfacial lithiation reactions. The interfacial lithium storage follows the pseudocapacitylike mechanism with intercalation character. Two different mechanisms are revealed to enhance the interfacial lithium adsorption and diffusion, which are the electron-deficiency host doping and the vacancylike structure evolutions with bond breaking. The synergistic effect between different dopants with diverse doping effects is also proposed. The results give a theoretical basis for the materials design with doped graphene as advanced materials modification for energy storage.

  11. Hard-Wired Dopant Networks and the Prediction of High Transition Temperatures in Ceramic Superconductors

    International Nuclear Information System (INIS)

    Phillips, J.C.

    2010-01-01

    The review multiple successes of the discrete hard-wired dopant network model ZZIP, and comment on the equally numerous failures of continuum models, in describing and predicting the properties of ceramic superconductors. The prediction of transition temperatures can be regarded in several ways, either as an exacting test of theory, or as a tool for identifying theoretical rules for defining new homology models. Popular first principle methods for predicting transition temperatures in conventional crystalline superconductors have failed for cuprate HTSC, as have parameterized models based on CuO2 planes (with or without apical oxygen). Following a path suggested by Bayesian probability, it was found that the glassy, self-organized dopant network percolative model is so successful that it defines a new homology class appropriate to ceramic superconductors. The reasons for this success in an exponentially complex (non-polynomial complete, NPC) problem are discussed, and a critical comparison is made with previous polynomial (PC) theories. The predictions are successful for the superfamily of all ceramics, including new non-cuprates based on FeAs in place of CuO2.

  12. Inhibition of DNA repair by whole body irradiation induced nitric oxide leads to higher radiation sensitivity in lymphocytes

    International Nuclear Information System (INIS)

    Sharma, Deepak; Santosh Kumar, S.; Raghu, Rashmi; Maurya, D.K.; Sainis, K.B.

    2007-01-01

    Full text: It is well accepted that the sensitivity of mammalian cells is better following whole body irradiation (WBI) as compared to that following in vitro irradiation. However, the underlying mechanisms are not well understood. Following WBI, the lipid peroxidation and cell death were significantly higher in lymphocytes as compared to that in vitro irradiated lymphocytes. Further, WBI treatment of tumor bearing mice resulted in a significantly higher inhibition of EL-4 cell proliferation as compared to in vitro irradiation of EL-4 cells. The DNA repair was significantly slower in lymphocytes obtained from WBI treated mice as compared to that in the cells exposed to same dose of radiation in vitro. Generation of nitric oxide following irradiation and also its role in inhibition of DNA repair have been reported, hence, its levels were estimated under both WBI and in vitro irradiation conditions. Nitric oxide levels were significantly elevated in the plasma of WBI treated mice but not in the supernatant of in vitro irradiated cells. Addition of sodium nitroprusside (SNP), a nitric oxide donor to in vitro irradiated cells inhibited the repair of DNA damage and sensitized cells to undergo cell death. It also enhanced the radiation-induced functional impairment of lymphocytes as evinced from suppression of mitogen-induced IL-2, IFN-γ and bcl-2 mRNA expression. Administration of N G -nitro-L-arginine-methyl-ester(L-NAME), a nitric oxide synthase inhibitor, to mice significantly protected lymphocytes against WBI-induced DNA damage and inhibited in vivo radiation-induced production of nitric oxide. Our results indicated that nitric oxide plays a role in the higher radiosensitivity of lymphocytes in vivo by inhibiting repair of DNA damage

  13. Screening based approach and dehydrogenation kinetics for MgH2: Guide to find suitable dopant using first-principles approach.

    Science.gov (United States)

    Kumar, E Mathan; Rajkamal, A; Thapa, Ranjit

    2017-11-14

    First-principles based calculations are performed to investigate the dehydrogenation kinetics considering doping at various layers of MgH 2 (110) surface. Doping at first and second layer of MgH 2 (110) has a significant role in lowering the H 2 desorption (from surface) barrier energy, whereas the doping at third layer has no impact on the barrier energy. Molecular dynamics calculations are also performed to check the bonding strength, clusterization, and system stability. We study in details about the influence of doping on dehydrogenation, considering the screening factors such as formation enthalpy, bulk modulus, and gravimetric density. Screening based approach assist in finding Al and Sc as the best possible dopant in lowering of desorption temperature, while preserving similar gravimetric density and Bulk modulus as of pure MgH 2 system. The electron localization function plot and population analysis illustrate that the bond between Dopant-Hydrogen is mainly covalent, which weaken the Mg-Hydrogen bonds. Overall we observed that Al as dopant is suitable and surface doping can help in lowering the desorption temperature. So layer dependent doping studies can help to find the best possible reversible hydride based hydrogen storage materials.

  14. Effect of the temperature in the sensitivity of CaSO4: Dy

    International Nuclear Information System (INIS)

    Gonzalez, P.R.; Alcantara, B.C.; Azorin, J.; Furetta, C.

    2003-01-01

    Sensitivity of a Tl material is one of the most important properties for dosimetry. This property is optimized by means of various processes such as the incorporation of different dopants into the matrix material, the application of certain doses of ionizing radiation and carefully controlled thermal treatments among others. Results obtained of studying the sensitivity of diverse preparations of CaSO 4 : Dy submitted different thermal treatments are presented. The material, which presented the highest sensitivity, was that one it was heated to 800 C during one hour. When the temperature was raised over this value it was observed that sensitivity drops again. In other hand, as the heating rate in lowing down, during the readout, the height of the glow curve decreases proportionally. The temperature of the maximum of the main peak also decreases. (Author)

  15. 3-D periodic mesoporous nickel oxide for nonenzymatic uric acid sensors with improved sensitivity

    Science.gov (United States)

    Huang, Wei; Cao, Yang; Chen, Yong; Zhou, Yang; Huang, Qingyou

    2015-12-01

    3-D periodic mesoporous nickel oxide (NiO) particles with crystalline walls have been synthesized through the microwave-assisted hard template route toward the KIT-6 silica. It was investigated as a nonenzymatic amperometric sensor for the detection of uric acid. 3-D periodic nickel oxide matrix has been obtained by the hard template route from the KIT-6 silica template. The crystalline nickel oxide belonged to the Ia3d space group, and its structure was characterized by X-ray diffraction (XRD), N2 adsorption-desorption, and transmission electron microscopy (TEM). The analysis results showed that the microwave-assisted mesoporous NiO materials were more appropriate to be electrochemical sensors than the traditional mesoporous NiO. Cyclic voltammetry (CV) revealed that 3-D periodic NiO exhibited a direct electrocatalytic activity for the oxidation of uric acid in sodium hydroxide solution. The enzyme-less amperometric sensor used in the detection of uric acid with detection limit of 0.005 μM (S/N = 3) over wide linear detection ranges up to 0.374 mM and with a high sensitivity of 756.26 μA mM-1 cm-2, and a possible mechanism was also given in the paper.

  16. Marine phospholipids: The current understanding of their oxidation mechanisms and potential uses for food fortification

    DEFF Research Database (Denmark)

    Lu, Henna Fung Sieng; Nielsen, Nina Skall; Baron, Caroline P.

    2017-01-01

    reactions, namely, Strecker aldehydes, pyrroles, oxypolymers, and other impurities that may positively or negatively affect the oxidative stability and quality of marine PL. This review was undertaken to provide the industry and academia with an overview of the current understanding of the quality changes......There is a growing interest in using marine phospholipids (PL) as ingredient for food fortification due to their numerous health benefits. However, the use of marine PL for food fortification is a challenge due to the complex nature of the degradation products that are formed during the handling...... and storage of marine PL. For example, nonenzymatic browning reactions may occur between lipid oxidation products and primary amine group from phosphatidylethanolamine or amino acid residues that are present inmarine PL. Therefore, marine PL contain products from nonenzymatic browning and lipid oxidation...

  17. Laser thermal annealing of Ge, optimized for highly activated dopants and diode ION/IOFF ratios

    DEFF Research Database (Denmark)

    Shayesteh, M.; O'Connell, D.; Gity, F.

    2014-01-01

    The authors compared the influence of laser thermal annealing (LTA) and rapid thermal annealing (RTA) on dopant activation and electrical performance of phosphorus and arsenic doped n+/p junction. High carrier concentration above 1020 cm-3 as well as an ION/IOFF ratio of approximately 105 and ide...

  18. Sonochemically synthesized iron-doped zinc oxide nanoparticles: Influence of precursor composition on characteristics

    International Nuclear Information System (INIS)

    Roy, Anirban; Maitra, Saikat; Ghosh, Sobhan; Chakrabarti, Sampa

    2016-01-01

    Highlights: • Sonochemical synthesis of iron-doped zinc oxide nanoparticles. • Green synthesis without alkali at room temperature. • Characterization by UV–vis spectroscopy, FESEM, XRD and EDX. • Influence of precursor composition on characteristics. • Composition and characteristics are correlated. - Abstract: Iron-doped zinc oxide nanoparticles have been synthesized sonochemically from aqueous acetyl acetonate precursors of different proportions. Synthesized nanoparticles were characterized with UV–vis spectroscopy, X-ray diffraction and microscopy. Influences of precursor mixture on the characteristics have been examined and modeled. Linear correlations have been proposed between dopant dosing, extent of doping and band gap energy. Experimental data corroborated with the proposed models.

  19. Towards chiral distributions of dopants in microporous frameworks: helicoidal supramolecular arrangement of (1R,2S)-ephedrine and transfer of chirality.

    Science.gov (United States)

    Gómez-Hortigüela, Luis; Álvaro-Muñoz, Teresa; Bernardo-Maestro, Beatriz; Pérez-Pariente, Joaquín

    2015-01-07

    A molecular-mechanics computational study is performed in order to analyze the arrangement of (1R,2S)-(-)-ephedrine molecules within the 12-MR channels of the AFI aluminophosphate microporous framework and the influence on the spatial distribution of dopants embedded in the tetrahedral network. Results showed that ephedrine molecules arrange exclusively as dimers by π-π stacking of the aromatic rings within the AFI channels. Interestingly, the asymmetric nature of ephedrine and the presence of H-bond-forming groups (NH2 and OH) involve a preferential orientation where consecutive dimers within the channels are rotated by an angle of +30°; this is driven by the establishment of inter-dimer H-bonds. This preferential orientation leads to the development of a supramolecular enantiomerically-pure helicoidal (chiral) arrangement of ephedrine dimers. In addition, the computational results demonstrate that the particular molecular structure of ephedrine imparts a strong trend to attract negative charges to the vicinity of the NH2(+) positively-charged groups. Hence divalent dopants such as Mg, whose replacement by trivalent Al in the aluminophosphate network involves the generation of a negative charge, will tend to locate close to the NH2(+) molecular groups, suggesting that an imprinting of the organic arrangement to the spatial distribution of dopants would be feasible. Combined with the trend of ephedrine to arrange in a helicoidal fashion, an enantiomerically-pure helicoidal distribution of dopants would be expected, thus inducing a new type of chirality in microporous materials.

  20. In silico optimization of phase-change materials for digital memories: a survey of first-row transition-metal dopants for Ge₂Sb₂Te₅.

    Science.gov (United States)

    Skelton, J M; Elliott, S R

    2013-05-22

    Phase-change materials are the alloys at the heart of an emerging class of next-generation, non-volatile digital memory technologies. However, the widely studied Ge-Sb-Te system possesses several undesirable properties, and enhancing its properties, e.g. by doping, is an area of active research. Various first-row transition-metal dopants have been shown to impart useful property enhancements, but a systematic study of the entire period has yet to be undertaken, and little has been done to investigate their interaction with the host material at the atomic level. We have carried out first-principles computer simulations of the complete phase-change cycle in Ge2Sb2Te5 doped with each of the ten first-row transition metals. In this article, we present a comprehensive survey of the electronic, magnetic and optical properties of these doped materials. We discuss in detail their atomic-level structure, and relate the microscopic behaviours of the dopant atoms to their influence on the Ge2Sb2Te5 host. By considering an entire family of similar materials, we identify trends and patterns which might be used to predict suitable dopants for optimizing materials for specific phase-change applications. The computational method employed here is general, and this materials-discovery approach could be applied in the future to study other families of potential dopants for such materials.

  1. Amplified photoacoustic performance and enhanced photothermal stability of reduced graphene oxide coated gold nanorods for sensitive photoacoustic imaging.

    Science.gov (United States)

    Moon, Hyungwon; Kumar, Dinesh; Kim, Haemin; Sim, Changbeom; Chang, Jin-Ho; Kim, Jung-Mu; Kim, Hyuncheol; Lim, Dong-Kwon

    2015-03-24

    We report a strongly amplified photoacoustic (PA) performance of the new functional hybrid material composed of reduced graphene oxide and gold nanorods. Due to the excellent NIR light absorption properties of the reduced graphene oxide coated gold nanorods (r-GO-AuNRs) and highly efficient heat transfer process through the reduced graphene oxide layer, r-GO-AuNRs exhibit excellent photothermal stability and significantly higher photoacoustic amplitudes than those of bare-AuNRs, nonreduced graphene oxide coated AuNRs (GO-AuNRs), or silica-coated AuNR, as demonstrated in both in vitro and in vivo systems. The linear response of PA amplitude from reduced state controlled GO on AuNR indicates the critical role of GO for a strong photothermal effect of r-GO-AuNRs. Theoretical studies with finite-element-method lab-based simulation reveal that a 4 times higher magnitude of the enhanced electromagnetic field around r-GO-AuNRs can be generated compared with bare AuNRs or GO-AuNRs. Furthermore, the r-GO-AuNRs are expected to be a promising deep-tissue imaging probe because of extraordinarily high PA amplitudes in the 4-11 MHz operating frequency of an ultrasound transducer. Therefore, the r-GO-AuNRs can be a useful imaging probe for highly sensitive photoacoustic images and NIR sensitive therapeutics based on a strong photothermal effect.

  2. Steel billet reheat simulation with growth of oxide layer and investigation on zone temperature sensitivity

    International Nuclear Information System (INIS)

    Dubey, Satish Kumar; Srinivasan, P.

    2014-01-01

    This paper presents a three-dimensional heat conduction numerical model and simulation of steel billet reheating in a reheat furnace. The model considers the growth of oxide scale on the billet surfaces. Control-volume approach and implicit scheme of finite difference method are used to discretize the transient heat conduction equation. The model is validated with analytical results subject to limited conditions. Simulations are carried out for predictions of three-dimensional temperature filed in the billet and oxide scale growth on the billet surfaces. The model predictions are in agreement with expected trends. It was found that the effect of oxide scale on billet heating is considerable. In order to investigate the effect of zone temperatures on the responses, a parametric sensitivity subject to six responses of interest are carried out using analysis of mean approach. The simulation approach and parametric study presented will be useful and applicable to the steel industry.

  3. Phosphorus {delta}-doped silicon: mixed-atom pseudopotentials and dopant disorder effects

    Energy Technology Data Exchange (ETDEWEB)

    Carter, Damien J; Marks, Nigel A [Nanochemistry Research Institute, Curtin University, PO Box U1987, Perth WA 6845 (Australia); Warschkow, Oliver; McKenzie, David R, E-mail: d.carter@curtin.edu.au [Centre for Quantum Computer Technology, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)

    2011-02-11

    Within a full density functional theory framework we calculate the band structure and doping potential for phosphorus {delta}-doped silicon. We compare two different representations of the dopant plane; pseudo-atoms in which the nuclear charge is fractional between silicon and phosphorus, and explicit arrangements employing distinct silicon and phosphorus atoms. While the pseudo-atom approach offers several computational advantages, the explicit model calculations differ in a number of key points, including the valley splitting, the Fermi level and the width of the doping potential. These findings have implications for parameters used in device modelling.

  4. Doped Josephson tunneling junction for use in a sensitive IR detector

    International Nuclear Information System (INIS)

    Fletcher, J.C.; Saffren, M.M.

    1975-01-01

    A superconductive tunneling device having a modified tunnel barrier capable of supporting Josephson tunneling current is provided. The tunnel barrier located between a pair of electrodes includes a molecular species which is capable of coupling incident radiation of a spectrum characteristic of the molecular species into the tunnel barrier. The coupled radiation modulates the known Josephson characteristics of the superconducting device. As a result of the present invention, a superconductive tunneling device can be tuned or made sensitive to a particular radiation associated with the dopant molecular species. The present invention is particularly useful in providing an improved infrared detector. The tunnel barrier region can be, for example, an oxide of an electrode or frozen gas. The molecular species can be intermixed with the barrier region such as the frozen gas or deposited as one or more layers of molecules on the barrier region. The deposited molecules of the molecular species are unbonded and capable of responding to a radiation characteristic of the molecules. Semi-conductor material can be utilized as the molecular species to provide an increased selective bandwidth response. Finally, appropriate detector equipment can be utilized to measure the modulation of any of the Josephson characteristics such as critical current, voltage steps, Lambe-Jaklevic peaks and plasma frequency. (auth)

  5. Improved Understanding of In Situ Chemical Oxidation. Technical Objective I: Contaminant Oxidation Kinetics Contaminant Oxidation Kinetics

    Science.gov (United States)

    2009-05-01

    methyl tert butyl ether NAPL non-aqueous phase liquid NOD natural oxidant demand •OH hydroxide radical Ox oxidant O3 ozone PCE...and persulfate; and Technical Objective 2, assess how soil properties (e.g., soil mineralogy , natural carbon content) affect oxidant mobility and...to develop a general description of kobs vs. T because there are many reactions that can contribute to the concentration of the reactive intermediate

  6. Identification of redox-sensitive cysteines in the arabidopsis proteome using OxiTRAQ, a quantitative redox proteomics method

    KAUST Repository

    Liu, Pei

    2014-01-28

    Cellular redox status plays a key role in mediating various physiological and developmental processes often through modulating activities of redox-sensitive proteins. Various stresses trigger over-production of reactive oxygen/nitrogen species which lead to oxidative modifications of redox-sensitive proteins. Identification and characterization of redox-sensitive proteins are important steps toward understanding molecular mechanisms of stress responses. Here, we report a high-throughput quantitative proteomic approach termed OxiTRAQ for identifying proteins whose thiols undergo reversible oxidative modifications in Arabidopsis cells subjected to oxidative stress. In this approach, a biotinylated thiol-reactive reagent is used for differential labeling of reduced and oxidized thiols. The biotin-tagged peptides are affinity purified, labeled with iTRAQ reagents, and analyzed using a paralleled HCD-CID fragmentation mode in an LTQ-Orbitrap. With this approach, we identified 195 cysteine-containing peptides from 179 proteins whose thiols underwent oxidative modifications in Arabidopsis cells following the treatment with hydrogen peroxide. A majority of those redox-sensitive proteins, including several transcription factors, were not identified by previous redox proteomics studies. This approach allows identification of the specific redox-regulated cysteine residues, and offers an effective tool for elucidation of redox proteomes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Efficiency of Nb-Doped ZnO Nanoparticles Electrode for Dye-Sensitized Solar Cells Application

    Science.gov (United States)

    Anuntahirunrat, Jirapat; Sung, Youl-Moon; Pooyodying, Pattarapon

    2017-09-01

    The technological of Dye-sensitized solar cells (DSSCs) had been improved for several years. Due to its simplicity and low cost materials with belonging to the part of thin films solar cells. DSSCs have numerous advantages and benefits among the other types of solar cells. Many of the DSSC devices had use organic chemical that produce by specific method to use as thin film electrodes. The organic chemical that widely use to establish thin film electrodes are Zinc Oxide (ZnO), Titanium Dioxide (TiO2) and many other chemical substances. Zinc oxide (ZnO) nanoparticles had been used in DSSCs applications as thin film electrodes. Nanoparticles are a part of nanomaterials that are defined as a single particles 1-100 nm in diameter. From a few year ZnO widely used in DSSC applications because of its optical, electrical and many others properties. In particular, the unique properties and utility of ZnO structure. However the efficiency of ZnO nanoparticles based solar cells can be improved by doped various foreign impurity to change the structures and properties. Niobium (Nb) had been use as a dopant of metal oxide thin films. Using specification method to doped the ZnO nanoparticles thin film can improved the efficiencies of DSSCs. The efficiencies of Nb-doped ZnO can be compared by doping 0 at wt% to 5 at wt% in ZnO nanoparticles thin films that prepared by the spin coating method. The thin film electrodes doped with 3 at wt% represent a maximum efficiencies with the lowest resistivity of 8.95×10-4 Ω·cm.

  8. Analysis of anabolic steroids in urine by gas chromatography-microchip atmospheric pressure photoionization-mass spectrometry with chlorobenzene as dopant.

    Science.gov (United States)

    Hintikka, Laura; Haapala, Markus; Kuuranne, Tiia; Leinonen, Antti; Kostiainen, Risto

    2013-10-18

    A gas chromatography-microchip atmospheric pressure photoionization-tandem mass spectrometry (GC-μAPPI-MS/MS) method was developed for the analysis of anabolic androgenic steroids in urine as their trimethylsilyl derivatives. The method utilizes a heated nebulizer microchip in atmospheric pressure photoionization mode (μAPPI) with chlorobenzene as dopant, which provides high ionization efficiency by producing abundant radical cations with minimal fragmentation. The performance of GC-μAPPI-MS/MS was evaluated with respect to repeatability, linearity, linear range, and limit of detection (LOD). The results confirmed the potential of the method for doping control analysis of anabolic steroids. Repeatability (RSD<10%), linearity (R(2)≥0.996) and sensitivity (LODs 0.05-0.1ng/mL) were acceptable. Quantitative performance of the method was tested and compared with that of conventional GC-electron ionization-MS, and the results were in good agreement. Copyright © 2013 Elsevier B.V. All rights reserved.

  9. Effect of testosterone on insulin sensitivity, oxidative metabolism and body composition in aging men with type 2 diabetes on metformin monotherapy

    DEFF Research Database (Denmark)

    Magnussen, Line V; Glintborg, Dorte; Hermann, Pernille

    2016-01-01

    . MATERIALS AND METHODS: We conducted a randomized, double-blind, placebo-controlled study in 39 men aged 50-70 years with BioT levels mass (LBM......), total and regional fat mass were measured using whole-body dual-energy X-ray absorptiometry scans. Whole-body peripheral insulin sensitivity, endogenous glucose production (EGP) and substrate oxidation were assessed by euglycaemic-hyperinsulinaemic clamp with glucose tracer and combined with indirect......AIMS: To evaluate the effect of testosterone replacement therapy (TRT) on body composition, insulin sensitivity, oxidative metabolism and glycaemic control in aging men with lowered bioavailable testosterone (BioT) levels and type 2 diabetes mellitus (T2D) controlled on metformin monotherapy...

  10. Vanadium oxide (VO) based low cost counter electrode in dye sensitized solar cell (DSSC) applications

    Energy Technology Data Exchange (ETDEWEB)

    Vijayakumar, P.; Pandian, Muthu Senthil; Ramasamy, P., E-mail: ramasamyp@ssn.edu.in [SSN Research Centre, SSN College of Engineering, Kalavakkam-603 110, Chennai, Tamilnadu (India)

    2015-06-24

    Vanadium oxide nanostars were synthesized by chemical method. The prepared Vanadium oxide nanostars are introduced into dye sensitized solar cell (DSSC) as counter electrode (CE) catalyst to replace the expensive platinum (Pt). The products were characterized by X-ray diffractometry (XRD), scanning electron microscopy (SEM), and Brunauer–Emmett–Teller (BET) method. The photovoltaic performance of the VO as counter electrode based DSSC was evaluated under simulated standard global AM 1.5G sunlight (100 mW/cm{sup 2}). The solar to electrical energy conversion efficiency (η) of the DSSC was found to be 0.38%.This work expands the Counter electrode catalyst, which can help to reduce the cost of DSSC and thereby encourage their fundamental research and commercial application.

  11. A polymeric liquid membrane electrode responsive to 3,3',5,5'-tetramethylbenzidine oxidation for sensitive peroxidase/peroxidase mimetic-based potentiometric biosensing.

    Science.gov (United States)

    Wang, Xuewei; Yang, Yangang; Li, Long; Sun, Mingshuang; Yin, Haogen; Qin, Wei

    2014-05-06

    The oxidation of 3,3',5,5'-tetramethylbenzidine (TMB) has great utility in bioanalysis such as peroxidase/peroxidase mimetic-based biosensing. In this paper, the behaviors of TMB oxidation intermediates/products in liquid/liquid biphasic systems have been investigated for the first time. The free radical, charge transfer complex, and diimine species generated by TMB oxidation are all positively charged under acidic and near-neutral conditions. Electron paramagnetic resonance and visible absorbance spectroscopy data demonstrate that these cationic species can be effectively transferred from an aqueous phase into a water-immiscible liquid phase functionalized by an appropriate cation exchanger. Accordingly, sensitive potential responses of TMB oxidation have been obtained on a cation exchanger-doped polymeric liquid membrane electrode under mildly acidic and near-neutral conditions. By using the membrane electrode responsive to TMB oxidations, two sensitive potentiometric biosensing schemes including the peroxidase-labeled sandwich immunoassay and G-quadruplex DNAzyme-based DNA hybridization assay have been developed. The obtained detection limits for the target antigen and DNA are 0.02 ng/mL and 0.1 nM, respectively. Coupled with other advantages such as low cost, high reliability, and ease of miniaturization and integration, the proposed polymeric liquid membrane electrode holds great promise as a facile and efficient transducer for TMB oxidation and related biosensing applications.

  12. Understanding of catalysis on early transition metal oxide-based catalysts through exploration of surface structure and chemistry during catalysis using in-situ approaches

    Energy Technology Data Exchange (ETDEWEB)

    Tao, Franklin [Univ. of Kansas, Lawrence, KS (United States). Dept. of Chemical and Petroleum Engineering. Dept. of Chemistry

    2015-09-14

    Two main categories of heterogeneous catalysts are metal and metal oxide which catalyze 80% chemical reactions at solid-gas and solid-liquid interfaces. Metal oxide catalysts are much more complicated than metal catalysts. The reason is that the cations of the metal atoms could exhibit a few different oxidation states on surface of the same catalyst particle such as Co3O4 or change of their oxidation states under different reactive environments. For a metal catalyst, there is only one oxidation state typically. In addition, surface of a metal oxide can be terminated with multiple surface functionalities including O atoms with different binding configurations and OH group. For metal, only metal atoms are exposed typically. Obviously, the complication of surface chemistry and structure of a metal oxide makes studies of surface of an oxide catalyst very challenging. Due to the complication of surface of a meal oxide, the electronic and geometric structures of surface of a metal oxide and the exposed species have received enormous attention since oxide catalysts catalyze at least 1/3 chemical reactions in chemical and energy industries. Understanding of catalytic reactions on early transition metal oxide-based catalysts is fundamentally intriguing and of great practical interest in energy- and environment-related catalysis. Exploration of surface chemistry of oxide-based catalysts at molecular level during catalysis has remained challenging though it is critical in deeply understanding catalysis on oxide-based catalysts and developing oxide-based catalysts with high activity and selectivity. Thus, the overall objective of this project is to explore surface chemistry and structure of early transition metal oxide-based catalysts through in-situ characterization of surface of catalysts, measurements of catalytic performances, and then build an intrinsic correlation of surface chemistry and structure with their catalytic performances in a few

  13. Gallium diffusion in zinc oxide via the paired dopant-vacancy mechanism

    Science.gov (United States)

    Sky, T. N.; Johansen, K. M.; Riise, H. N.; Svensson, B. G.; Vines, L.

    2018-02-01

    Isochronal and isothermal diffusion experiments of gallium (Ga) in zinc oxide (ZnO) have been performed in the temperature range of 900-1050 °C. The samples used consisted of a sputter-deposited and highly Ga-doped ZnO film at the surface of a single-crystal bulk material. We use a novel reaction diffusion (RD) approach to demonstrate that the diffusion behavior of Ga in ZnO is consistent with zinc vacancy (VZn) mediation via the formation and dissociation of GaZnVZn complexes. In the RD modeling, experimental diffusion data are fitted utilizing recent density-functional-theory estimates of the VZn formation energy and the binding energy of GaZnVZn. From the RD modeling, a migration energy of 2.3 eV is deduced for GaZnVZn, and a total/effective activation energy of 3.0 eV is obtained for the Ga diffusion. Furthermore, and for comparison, employing the so-called Fair model, a total/effective activation energy of 2.7 eV is obtained for the Ga diffusion, reasonably close to the total value extracted from the RD-modeling.

  14. Nanobeads of zinc oxide with rhodamine B dye as a sensitizer for dye sensitized solar cell application

    Energy Technology Data Exchange (ETDEWEB)

    Baviskar, P.K. [Thin Film and Nano Science Laboratory, Department of Physics, School of Physical Sciences, North Maharashtra University, Jalgaon 425 001, MS (India); Zhang, J.B. [Key Laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Gupta, V.; Chand, S. [Organic and Hybrid Solar Cell, Physics of Energy Harvesting Division, Dr. K. S. Krishnan Marg, National Physical Laboratory, New Delhi 110012 (India); Sankapal, B.R., E-mail: brsankapal@rediffmail.com [Thin Film and Nano Science Laboratory, Department of Physics, School of Physical Sciences, North Maharashtra University, Jalgaon 425 001, MS (India)

    2012-01-05

    Highlights: > Synthesis of ZnO film was done at room temperature (27 deg. C). > Simple and inexpensive chemical bath deposition method was employed. > The as deposited film consists of mixed phases of hydroxide and oxide. > The post annealing was done at 200 deg. C in order to remove hydroxide phase. > Low-cost, metal free Rhodamine B dye was used for DSSC application. - Abstract: Cost effective, ruthenium metal free rhodamine B dye has been chemically adsorbed on ZnO films consisting of nanobeads to serve as a photo anode in dye sensitized solar cells. These ZnO films were chemically synthesized at room temperature (27 deg. C) on to fluorine doped tin oxide (FTO) coated glass substrates followed by annealing at 200 deg. C. These films consisting of inter connected nanobeads (20-40 nm) which are due to the agglomeration of very small size particles (3-5 nm) leading to high surface area. The film shows wurtzite structure having high crystallinity with optical direct band gap of 3.3 eV. Optical absorbance measurements for rhodamine B dye covered ZnO film revealed the good coverage in the visible region (460-590 nm) of the solar spectrum. With poly-iodide liquid as an electrolyte, device exhibits photon to electric energy conversion efficiency ({eta}) of 1.26% under AM 1.5G illumination at 100 mW/cm{sup 2}.

  15. About influence of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in heterobipolar transistors

    Directory of Open Access Journals (Sweden)

    E Pankratov

    2016-10-01

    Full Text Available In this paper we introduce an approach to manufacture a heterobipolar transistors. Framework this approach we consider doping by diffusion or by ion implantation of required parts of a heterostructure with special configuration and optimization of annealing of dopant and/or radiation defects. In this case one have possibility to manufacture bipolar transistors, which include into itself p-n-junctions with higher sharpness and smaller dimensions. We also consider influence of presents of buffer porous layers between epitaxial layers of heterostructure on distributions of concentrations of dopants in the considered transistors. An approach to decrease value of mismatch-induced stress has been considered.

  16. Aggregation in thin-film silver: Induced by chlorine and inhibited by alloying with two dopants

    International Nuclear Information System (INIS)

    Koike, Katsuhiko; Shimada, Koichi; Fukuda, Shin

    2009-01-01

    The Ag aggregation mechanism triggered by chlorine (Cl) is discussed. The frontier orbital theory by K. Fukui is applied in order to determine the growing point in the silver (Ag) cluster. Ag in the thin-film silver would grow to Ag n Cl and stack, triggered by Cl from the outside according to the mechanism described. This would lead to an aggregate with a high Ag density. It is suggested that this would be the generating mechanism of the silver-gray aggregate consisting mostly of Ag, which is generated by exposing it to Cl. Two tactics in order to prevent restrain aggregation induced by Cl according to the mechanism are proposed. Tactic 1 is a restraining of structure change to a plane in the process of Ag 6 Cl + Ag → Ag 7 Cl. Tactic 2 is the trapping of Cl before it generates a bond to Ag. The ability of the two combined dopants with the abilities of tactics 1 and 2, such as in an Ag alloy including palladium and copper (APC), and including neodymium and gold (ANA) is expected to be very high. The aggregation resistance of an Ag alloy including two dopants is evaluated by a salt water immersion test. The APC and ANA demonstrated a very high resistance to Cl, because of the combination of the dopants working with tactic 1 (Pd, Au) and tactic 2 (Cu, Nd). The multilayer sputter coating with an ANA layer demonstrated a very interesting profile where the light transmittance and the electrical sheet resistance are almost the same as the multilayer sputter coating with a pure Ag. The multilayer sputter coating with AIS also demonstrates a very interesting profile, where the light transmittance is higher than the multilayer sputter coating with a pure Ag.

  17. Biominerals doped nanocrystalline nickel oxide as efficient humidity sensor: A green approach

    International Nuclear Information System (INIS)

    John Kennedy, L.; Magesan, P.; Judith Vijaya, J.; Umapathy, M.J.; Aruldoss, Udaya

    2014-01-01

    Graphical abstract: - Highlights: • A new resistive type of sensor was prepared by green synthesis. • The mineral oxide from seed part of Hygrophila spinosa T. Anders (HST) plant is chosen as a dopant in NiO. • The HST plant is found abundantly and commercially available in many countries. • The band gap of NH2 (Ni:HST of 0.5:0.5 weight ratio) sample is greater than prepared bulk NiO due to quantum effects. • The NH2 sample shows remarkable changes in the humidity sensing properties. - Abstract: The simple and green method is adopted for the preparation of biominerals (derived from the Hygrophila spinosa T. Anders plant seeds) doped nanocrystalline NiO. The prepared samples were subjected to instrumental analysis such as XRD, FT-IR, HR-SEM, EDX, UV–vis–DRS techniques. The surface area of all the samples was calculated from the Williamson–Hall's plot. The humidity sensitivity factor (S f ) of the prepared samples was evaluated by two probe dc electrical resistance method at different relative humidity levels. The change in the resistance was observed for the entire sensor samples except pure NiO (NH0). Compared to all the other composition, HST of 0.5% in NiO (NH2 sample) enhances the sensitivity factor (S f ) of about 90,000. The NH2 sample exhibited good linearity, reproducibility and response and recovery time about 210 ± 5 s and 232 ± 4 s, respectively. It is found that the sensitivity largely depends on composition, crystallite size and surface area

  18. (Invited) Pure Dopant Deposition of B and Ga for Ultrashallow Junctions in Si-based Devices

    NARCIS (Netherlands)

    Nanver, L.K.; Sammak, A.; Mohammadi, V.; Mok, K.R.C.; Qi, L.; Sakic, A.; Golshani, N.; Darakhshandeh, J.; Scholtes, T.M.L.; De Boer, W.B.

    2012-01-01

    Envisioning wide future relevance, work is reviewed here on the pure dopant deposition of boron (PureB), gallium (PureGa) and the combination of the two (PureGaB), as used in the fabrication of nanometer shallow p+n Si and/or Ge diodes. Focus is placed on the special properties that have put these

  19. Sensitivity of nitrogen dioxide concentrations to oxides of nitrogen controls in the United Kingdom

    International Nuclear Information System (INIS)

    Dixon, J.

    2001-01-01

    There is a possibility of further controls on emissions to the atmosphere of nitrogen dioxides to meet air quality objectives in the UK. Data in the National Air Quality Archive were used to calculate the likely sensitivity of hourly concentrations of nitrogen dioxide in ambient urban air to changes in the total oxides of nitrogen. Since the role of atmospheric chemical reactions is to make the responses non-linearly dependent on the emissions control, we seek to establish the magnitude and sign of the effects that this non-linearity might cause. We develop a quantitative approach to analysing the non-linearity in the data. Polynomial fits have been developed for the empirical ratio NO 2 :NO x (the 'yield'). They describe nitrogen dioxide concentrations using total oxides of nitrogen. The new functions have the important feature of increased yield in winter episodes. Simpler functions tend to omit this feature of the yields at the highest hourly concentrations. Based on this study, the hourly nitrogen dioxide objective in the UK may require emissions control of no more than about 50% on total oxides of nitrogen at the most polluted sites: other sites require less or even no control. (Author)

  20. Modified graphene oxide sensors for ultra-sensitive detection of nitrate ions in water.

    Science.gov (United States)

    Ren, Wen; Mura, Stefania; Irudayaraj, Joseph M K

    2015-10-01

    Nitrate ions is a very common contaminant in drinking water and has a significant impact on the environment, necessitating routine monitoring. Due to its chemical and physical properties, it is hard to directly detect nitrate ions with high sensitivity in a simple and inexpensive manner. Herein with amino group modified graphene oxide (GO) as a sensing element, we show a direct and ultra-sensitive method to detect nitrate ions, at a lowest detected concentration of 5 nM in river water samples, much lower than the reported methods based on absorption spectroscopy. Furthermore, unlike the reported strategies based on absorption spectroscopy wherein the nitrate concentration is determined by monitoring an increase in aggregation of gold nanoparticles (GNPs), our method evaluates the concentration of nitrate ions based on reduction in aggregation of GNPs for monitoring in real samples. To improve sensitivity, several optimizations were performed, including the assessment of the amount of modified GO required, concentration of GNPs and incubation time. The detection methodology was characterized by zeta potential, TEM and SEM. Our results indicate that an enrichment of modified GO with nitrate ions contributed to excellent sensitivity and the entire detection procedure could be completed within 75 min with only 20 μl of sample. This simple and rapid methodology was applied to monitor nitrate ions in real samples with excellent sensitivity and minimum pretreatment. The proposed approach paves the way for a novel means to detect anions in real samples and highlights the potential of GO based detection strategy for water quality monitoring. Copyright © 2015 Elsevier B.V. All rights reserved.

  1. Sensitivity Analysis of Oxide Scale Influence on General Carbon Steels during Hot Forging

    Directory of Open Access Journals (Sweden)

    Bernd-Arno Behrens

    2018-02-01

    Full Text Available Increasing product requirements have made numerical simulation into a vital tool for the time- and cost-efficient process design. In order to accurately model hot forging processes with finite, element-based numerical methods, reliable models are required, which take the material behaviour, surface phenomena of die and workpiece, and machine kinematics into account. In hot forging processes, the surface properties are strongly affected by the growth of oxide scale, which influences the material flow, friction, and product quality of the finished component. The influence of different carbon contents on material behaviour is investigated by considering three different steel grades (C15, C45, and C60. For a general description of the material behaviour, an empirical approach is used to implement mathematical functions for expressing the relationship between flow stress and dominant influence variables like alloying elements, initial microstructure, and reheating mode. The deformation behaviour of oxide scale is separately modelled for each component with parameterized flow curves. The main focus of this work lies in the consideration of different materials as well as the calculation and assignment of their material properties in dependence on current process parameters by application of subroutines. The validated model is used to carry out the influence of various oxide scale parameters, like the scale thickness and the composition, on the hot forging process. Therefore, selected parameters have been varied within a numerical sensitivity analysis. The results show a strong influence of oxide scale on the friction behaviour as well as on the material flow during hot forging.

  2. Dimethyl sulfoxide in a 10% concentration has no effect on oxidation stress induced by ovalbumin-sensitization in a guinea-pig model of allergic asthma.

    Science.gov (United States)

    Mikolka, P; Mokra, D; Drgova, A; Petras, M; Mokry, J

    2012-04-01

    In allergic asthma, activated cells produce various substances including reactive oxygen species (ROS). As heterogenic pathophysiology of asthma results to different response to the therapy, testing novel interventions continues. Because of water-insolubility of some potentially beneficial drugs, dimethyl sulfoxide (DMSO) is often used as a solvent. Based on its antioxidant properties, this study evaluated effects of DMSO on mobilization of leukocytes into the lungs, and oxidation processes induced by ovalbumin (OVA)-sensitization in a guinea-pig model of allergic asthma. Guinea-pigs were divided into OVA-sensitized and naive animals. One group of OVA-sensitized animals and one group of naive animals were pretreated with 10% DMSO, the other two groups were given saline. After sacrificing animals, blood samples were taken and total antioxidant status (TAS) in the plasma was determined. Left lungs were saline-lavaged and differential leukocyte count in bronchoalveolar lavage fluid (BAL) was made. Right lung tissue was homogenized, TAS and products of lipid and protein oxidation were determined in the lung homogenate and in isolated mitochondria. OVA-sensitization increased total number of cells and percentages of eosinophils and neutrophils in BAL fluid; increased lipid and protein oxidation in the lung homogenate and mitochondria, and decreased TAS in the lungs and plasma compared with naive animals. However, no differences were observed in DMSO-instilled animals compared to controls. In conclusion, OVA-sensitization increased mobilization of leukocytes into the lungs and elevated production of ROS, accompanied by decrease in TAS. 10% DMSO had no effect on lipid and protein oxidation in a guinea-pig model of allergic asthma.

  3. The Relationship of Oxidation Sensitivity of Red Blood Cells and Carbonic Anhydrase Activity in Stored Human Blood: Effect of Certain Phenolic Compounds

    Directory of Open Access Journals (Sweden)

    Zübeyir Huyut

    2016-01-01

    Full Text Available It has been reported that many modifications occur with the increase of oxidative stress during storage in erythrocytes. In order to delay these negative changes, we evaluated whether the addition of substances likely to protect antioxidant capacity in stored blood would be useful. Therefore, we investigated the effects of resveratrol, tannic acid, and caffeic acid in lipid peroxidation and antioxidant capacity of erythrocytes in stored blood. Donated blood was taken into four CPD containing blood bags. One bag was used as the control, and the others were supplemented with caffeic acid (30 μg/mL, resveratrol (30 μg/mL, and tannic acid (15 μg/mL, respectively. Erythrocyte lipid peroxidation, sensitivity to oxidation, glutathione levels and carbonic anhydrase, glutathione peroxidase, and catalase activities were measured on days 0, 7, 14, 21, and 28. In the control group, erythrocyte malondialdehyde levels and sensitivity to oxidation were increased whereas glutathione, glutathione peroxidase, and catalase levels were decreased (p<0.05. Resveratrol and caffeic acid prevented malondialdehyde accumulation and preserved glutathione, glutathione peroxidase, and catalase activities in erythrocytes. We demonstrated that resveratrol, caffeic acid, and tannic acid in stored blood could decrease the sensitivity to oxidation of erythrocytes in vitro but did not exhibit such effects on CA activity.

  4. High Thermoelectric Figure of Merit by Resonant Dopant in Half-Heusler Alloys

    OpenAIRE

    Chen, Long; Liu, Yamei; He, Jian; Tritt, Terry M.; Poon, S. Joseph

    2017-01-01

    Half-Heusler alloys have been one of the benchmark high temperature thermoelectric materials owing to their thermal stability and promising figure of merit ZT. Simonson et al. early showed that small amounts of vanadium doped in Hf0.75Zr0.25NiSn enhanced the Seebeck coefficient and correlated the change with the increased density of states near the Fermi level. We herein report a systematic study on the role of vanadium (V), niobium (Nb), and tantalum (Ta) as prospective resonant dopants in e...

  5. Graphene oxide-enhanced sol-gel transition sensitivity and drug release performance of an amphiphilic copolymer-based nanocomposite

    Science.gov (United States)

    Hu, Huawen; Wang, Xiaowen; Lee, Ka I; Ma, Kaikai; Hu, Hong; Xin, John H.

    2016-01-01

    We report the fabrication of a highly sensitive amphiphilic copolymer-based nanocomposite incorporating with graphene oxide (GO), which exhibited a low-intensity UV light-triggered sol-gel transition. Non-cytotoxicity was observed for the composite gels after the GO incorporation. Of particular interest were the microchannels that were formed spontaneously within the GO-incorporated UV-gel, which expedited sustained drug release. Therefore, the present highly UV-sensitive, non-cytotoxic amphiphilic copolymer-based composites is expected to provide enhanced photothermal therapy and chemotherapy by means of GO’s unique photothermal properties, as well as through efficient passive targeting resulting from the sol-gel transition characteristic of the copolymer-based system with improved sensitivity, which thus promises the enhanced treatment of patients with cancer and other diseases. PMID:27539298

  6. Morphology dependent dye-sensitized solar cell properties of nanocrystalline zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, S.K., E-mail: sanjeevlrs732000@yahoo.co.in [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Inamdar, A.I.; Im, Hyunsik [Department of Semiconductor Science, Dongguk University, Seoul 100 715 (Korea, Republic of); Kim, B.G. [Department of Information and Communication, Cheju Halla College, Jeju City 690 708 (Korea, Republic of); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416 004 (India)

    2011-02-03

    Research highlights: > Nano-crystalline zinc oxide thin films were electrosynthesized from an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution onto FTO coated conducting glass substrates using two different electrochemical routes, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) or SDS (sodium dodecyl sulfate). > The reproducibility of the catalytic activity of the SDS and PVA surfactants in the modification of the morphologies was observed. > Vertically aligned nest-like and compact structures were observed from the SDS and PVA mediated films, respectively, while the grain size in the ZnO thin films without an organic surfactant was observed to be {approx}150 nm. > The dye sensitized ZnO electrodes displayed excellent properties in the conversion process from light to electricity. The efficiencies of the surfactant mediated nanocrystalline ZnO thin films, viz. ZnO:SDS and ZnO:PVA, sensitized with ruthenium-II (N3) dye were observed to be 0.49% and 0.27%, respectively. - Abstract: Nano-crystalline zinc oxide thin films were electrosynthesized with an aqueous zinc acetate [Zn(CH{sub 3}COO){sub 2}.2H{sub 2}O] solution on to FTO coated glass substrates. Two different electrochemical baths were used, namely (i) without an organic surfactant and (ii) with an organic surfactant, viz. PVA (poly-vinyl alcohol) and SDS (sodium dodecyl sulfate). The organic surfactants played an important role in modifying the surface morphology, which influenced the size of the crystallites and dye-sensitized solar cell (DSSC) properties. The vertically aligned thin and compact hexagonal crystallites were observed with SDS mediated films, while the grain size in the films without an organic surfactant was observed to be {approx}150 nm. The conversion efficiencies of the ZnO:SDS:Dye and ZnO:PVA:Dye thin films were observed to be 0.49% and 0.27%, respectively.

  7. Space-Based Diagnosis of Surface Ozone Sensitivity to Anthropogenic Emissions

    Science.gov (United States)

    Martin, Randall V.; Fiore, Arlene M.; VanDonkelaar, Aaron

    2004-01-01

    We present a novel capability in satellite remote sensing with implications for air pollution control strategy. We show that the ratio of formaldehyde columns to tropospheric nitrogen dioxide columns is an indicator of the relative sensitivity of surface ozone to emissions of nitrogen oxides (NO(x) = NO + NO2) and volatile organic compounds (VOCs). The diagnosis from these space-based observations is highly consistent with current understanding of surface ozone chemistry based on in situ observations. The satellite-derived ratios indicate that surface ozone is more sensitive to emissions of NO(x) than of VOCs throughout most continental regions of the Northern Hemisphere during summer. Exceptions include Los Angeles and industrial areas of Germany. A seasonal transition occurs in the fall when surface ozone becomes less sensitive to NOx and more sensitive to VOCs.

  8. Surface Grafting of Ru(II) Diazonium-Based Sensitizers on Metal Oxides Enhances Alkaline Stability for Solar Energy Conversion.

    Science.gov (United States)

    Bangle, Rachel; Sampaio, Renato N; Troian-Gautier, Ludovic; Meyer, Gerald J

    2018-01-24

    The electrografting of [Ru(ttt)(tpy-C 6 H 4 -N 2 + )] 3+ , where "ttt" is 4,4',4″-tri-tert-butyl-2,2':6',2″-terpyridine, was investigated on several wide band gap metal oxide surfaces (TiO 2 , SnO 2 , ZrO 2 , ZnO, In 2 O 3 :Sn) and compared to structurally analogous sensitizers that differed only by the anchoring group, i.e., -PO 3 H 2 and -COOH. An optimized procedure for diazonium electrografting to semiconductor metal oxides is presented that allowed surface coverages that ranged between 4.7 × 10 -8 and 10.6 × 10 -8 mol cm -2 depending on the nature of the metal oxide. FTIR analysis showed the disappearance of the diazonium stretch at 2266 cm -1 after electrografting. XPS analysis revealed a characteristic peak of Ru 3d at 285 eV as well as a peak at 531.6 eV that was attributed to O 1s in Ti-O-C bonds. Photocurrents were measured to assess electron injection efficiency of these modified surfaces. The electrografted sensitizers exhibited excellent stability across a range of pHs spanning from 1 to 14, where classical binding groups such as carboxylic and phosphonic derivatives were hydrolyzed.

  9. Synthesis and Characterization of Holmium-Doped Iron Oxide Nanoparticles

    Directory of Open Access Journals (Sweden)

    Maarten Bloemen

    2014-02-01

    Full Text Available Rare earth atoms exhibit several interesting properties, for example, large magnetic moments and luminescence. Introducing these atoms into a different matrix can lead to a material that shows multiple interesting effects. Holmium atoms were incorporated into an iron oxide nanoparticle and the concentration of the dopant atom was changed in order to determine its influence on the host crystal. Its magnetic and magneto-optical properties were investigated by vibrating sample magnetometry and Faraday rotation measurements. The luminescent characteristics of the material, in solution and incorporated in a polymer thin film, were probed by fluorescence experiments.

  10. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers

    Science.gov (United States)

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-01

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  11. Considerably improved photovoltaic performance of carbon nanotube-based solar cells using metal oxide layers.

    Science.gov (United States)

    Wang, Feijiu; Kozawa, Daichi; Miyauchi, Yuhei; Hiraoka, Kazushi; Mouri, Shinichiro; Ohno, Yutaka; Matsuda, Kazunari

    2015-02-18

    Carbon nanotube-based solar cells have been extensively studied from the perspective of potential application. Here we demonstrated a significant improvement of the carbon nanotube solar cells by the use of metal oxide layers for efficient carrier transport. The metal oxides also serve as an antireflection layer and an efficient carrier dopant, leading to a reduction in the loss of the incident solar light and an increase in the photocurrent, respectively. As a consequence, the photovoltaic performance of both p-single-walled carbon nanotube (SWNT)/n-Si and n-SWNT/p-Si heterojunction solar cells using MoOx and ZnO layers is improved, resulting in very high photovoltaic conversion efficiencies of 17.0 and 4.0%, respectively. These findings regarding the use of metal oxides as multifunctional layers suggest that metal oxide layers could improve the performance of various electronic devices based on carbon nanotubes.

  12. Endocrine disruptors found in food contaminants enhance allergic sensitization through an oxidative stress that promotes the development of allergic airway inflammation

    International Nuclear Information System (INIS)

    Kato, Takuma; Tada-Oikawa, Saeko; Wang, Linan; Murata, Mariko; Kuribayashi, Kagemasa

    2013-01-01

    In the past few decades, there has been a significant increase in incidence of allergic diseases. The hygiene hypothesis may provide some clues to explain this rising trend, but it may also be attributable to other environmental factors that exert a proallergic adjuvant effects. However, there is limited information on the risks of developing allergic asthma and related diseases through the ingestion of environmental chemicals found in food contaminants. In the present study, we have shown that oral administration of tributyltin, used as a model environmental chemical, induced oxidative-stress status in the bronchial lymph node, mesenteric lymph node and spleen, but not in the lung, where the initial step of allergic asthma pathogenesis takes place. Mice exposed to tributyltin exhibited heightened Th2 immunity to the allergen with more severe airway inflammation. Tributyltin also induced Treg cells apoptosis preferentially over non-Treg cells. All these effects of tributyltin exposure were canceled by the administration of glutathione monoethyl ester. Meanwhile, tributyltin did not affect airway inflammation of mice transferred with allergen-specific Th2 cells. Collectively, these results suggest that tributyltin exerts its pathological effect during the sensitization phase through oxidative stress that enhances the development of allergic diseases. The current study dissects the pathogenic role of oxidative stress induced by oral exposure to an environmental chemical during the sensitization phase of allergic airway inflammation and would be important for developing therapeutics for prevention of allergic diseases. - Highlights: • Oral exposure to TBT exacerbates airway inflammation. • TBT induces oxidative stress in secondary lymphoid organs, but not in the lung. • TBT preferentially induces regulatory T cell apoptosis over non-Treg cells. • TBT does not enhance pre-existing airway inflammation in sensitized mice. • Chemicals in food contaminants

  13. Endocrine disruptors found in food contaminants enhance allergic sensitization through an oxidative stress that promotes the development of allergic airway inflammation

    Energy Technology Data Exchange (ETDEWEB)

    Kato, Takuma, E-mail: katotaku@doc.medic.mie-u.ac.jp [Department of Cellular and Molecular Immunology, Mie University Graduate School of Medicine (Japan); Tada-Oikawa, Saeko [Department of Environmental and Molecular Medicine, Mie University Graduate School of Medicine (Japan); Wang, Linan [Department of Cellular and Molecular Immunology, Mie University Graduate School of Medicine (Japan); Murata, Mariko [Department of Environmental and Molecular Medicine, Mie University Graduate School of Medicine (Japan); Kuribayashi, Kagemasa [Department of Cellular and Molecular Immunology, Mie University Graduate School of Medicine (Japan)

    2013-11-15

    In the past few decades, there has been a significant increase in incidence of allergic diseases. The hygiene hypothesis may provide some clues to explain this rising trend, but it may also be attributable to other environmental factors that exert a proallergic adjuvant effects. However, there is limited information on the risks of developing allergic asthma and related diseases through the ingestion of environmental chemicals found in food contaminants. In the present study, we have shown that oral administration of tributyltin, used as a model environmental chemical, induced oxidative-stress status in the bronchial lymph node, mesenteric lymph node and spleen, but not in the lung, where the initial step of allergic asthma pathogenesis takes place. Mice exposed to tributyltin exhibited heightened Th2 immunity to the allergen with more severe airway inflammation. Tributyltin also induced Treg cells apoptosis preferentially over non-Treg cells. All these effects of tributyltin exposure were canceled by the administration of glutathione monoethyl ester. Meanwhile, tributyltin did not affect airway inflammation of mice transferred with allergen-specific Th2 cells. Collectively, these results suggest that tributyltin exerts its pathological effect during the sensitization phase through oxidative stress that enhances the development of allergic diseases. The current study dissects the pathogenic role of oxidative stress induced by oral exposure to an environmental chemical during the sensitization phase of allergic airway inflammation and would be important for developing therapeutics for prevention of allergic diseases. - Highlights: • Oral exposure to TBT exacerbates airway inflammation. • TBT induces oxidative stress in secondary lymphoid organs, but not in the lung. • TBT preferentially induces regulatory T cell apoptosis over non-Treg cells. • TBT does not enhance pre-existing airway inflammation in sensitized mice. • Chemicals in food contaminants

  14. Oxidation and corrosion of silicon-based ceramics and composites

    International Nuclear Information System (INIS)

    Jacobson, N.S.; Fox, D.S.; Smialek, J.L.

    1997-01-01

    Silica scales exhibit slow growth rates and a low activation energy. Thus silica-protected materials are attractive high temperature structural materials for their potentially excellent oxidation resistance and well-documented high temperature strength. This review focuses on silicon carbide, silicon nitride, and composites of these materials. It is divided into four parts: (i) Fundamental oxidation mechanisms, (ii) Special properties of silica scales, (iii) Protective coatings, and (iv) Internal oxidation behavior of composites. While the fundamental oxidation mechanism of SiC is understood, there are still many questions regarding the oxidation mechanism of Si 3 N 4 . Silica scales exhibit many unique properties as compared to chromia and alumina. These include slower growth rates, SiO(g) formation, sensitivity to water vapor and impurities, and dissolution by basic molten salts. Protective coatings can limit the deleterious effects. The fourth area-internal oxidation of fibers and fiber coatings in composites-has limited the application of these novel materials. Strategies for understanding and limiting this internal oxidation are discussed. (orig.)

  15. Growth of TiO2-ZrO2 Binary Oxide Electrode for Dye Sensitized Solar Cell Application

    International Nuclear Information System (INIS)

    Than Than Win; Aye Myint Myat Kywe; Shwe Yee Win; Honey Thaw; Yin Maung Maung; Ko Ko Kyaw Soe

    2011-12-01

    TiO2-ZrO2 fine binary oxide was prepared by mechanochemical milling process to be homogeneous binary oxide powder. TiO2-ZrO2 paste was deposited on microscopic glass slide by rolling. It was immersed in the henna solution and annealed at 100C for 2h. It was deposited onto another glass slide and used as counter electrode (second electrode). Two glass slides were offset and two binder clips were used to hold the electrodes together. Photovoltaic properties of TiO2-ZrO2 cell were measured and it was expected to utilize the dye sensitized solar cells application.

  16. Effect of metallic dopants on the microstructure and mechanical properties of TiB2

    Czech Academy of Sciences Publication Activity Database

    Chlup, Zdeněk; Bača, L.; Halasová, Martina; Neubauer, E.; Hadraba, Hynek; Stelzer, N.; Roupcová, Pavla

    2015-01-01

    Roč. 35, č. 10 (2015), s. 2745-2754 ISSN 0955-2219 R&D Projects: GA ČR(CZ) GAP108/11/1644; GA MŠk(CZ) ED1.1.00/02.0068 Grant - others:The Austrian Research Promotion Agency (FFG)(AT) 834287 Institutional support: RVO:68081723 Keywords : Titanium diboride * Metallic dopants * Microstructure * Mechanical properties * Fracture behaviour1 Subject RIV: JL - Materials Fatigue, Friction Mechanics Impact factor: 2.933, year: 2015

  17. Saddle-fin cell transistors with oxide etch rate control by using tilted ion implantation (TIS-fin) for sub-50-nm DRAMs

    International Nuclear Information System (INIS)

    Yoo, Min Soo; Choi, Kang Sik; Sun, Woo Kyung

    2010-01-01

    As DRAM cell pitch size decreases, the need for a high performance transistor is increasing. Though saddle-fin (S-fin) transistors have superior characteristics, S-fin transistors are well known to be more sensitive to process variation. To make uniform S-fin transistors, for the first time, we developed a new fin formation method using tilted ion implantation along the wordline direction after a recess gate etch. Due to the increased etch rate of the oxide film by ion implantation damage, fins are made at the bottom channel of the recess gate after wet etching. The resulting tilt implanted saddle-fin (TIS-fin) transistor has remarkably improved characteristics, such as ∼8% subthreshold swing (SS) and a 40% drain induced barrier lowering (DIBL) decrease. Especially, the TIS-fin with a neutral dopant has a reduced threshold voltage (Vth) variation within a wafer (<100 mV), which is comparable with that of a mass-produced sphere-shaped recessed channel array transistor (SRCAT).

  18. Recent progress in the development and understanding of silicon surface passivation by aluminum oxide for photovoltaics

    NARCIS (Netherlands)

    Dingemans, G.; Kessels, W.M.M.

    2010-01-01

    In the recent years, considerable progress has been made in the understanding of the unique silicon surface passivation properties of aluminum oxide (Al2O3) films including its underlying mechanisms. Containing a high fixed negative charge density located close to the Si interface, Al2O3 provides a

  19. Quantitative dopant profiling in semiconductors. A new approach to Kelvin probe force microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Baumgart, Christine

    2012-07-01

    Failure analysis and optimization of semiconducting devices request knowledge of their electrical properties. To meet the demands of today's semiconductor industry, an electrical nanometrology technique is required which provides quantitative information about the doping profile and which enables scans with a lateral resolution in the sub-10 nm range. In the presented work it is shown that Kelvin probe force microscopy (KPFM) is a very promising electrical nanometrology technique to face this challenge. The technical and physical aspects of KPFM measurements on semiconductors required for the correct interpretation of the detected KPFM bias are discussed. A new KPFM model is developed which enables the quantitative correlation between the probed KPFM bias and the dopant concentration in the investigated semiconducting sample. Quantitative dopant profiling by means of the new KPFM model is demonstrated by the example of differently structured, n- and p-type doped silicon. Additionally, the transport of charge carriers during KPFM measurements, in particular in the presence of intrinsic electric fields due to vertical and horizontal pn junctions as well as due to surface space charge regions, is discussed. Detailed investigations show that transport of charge carriers in the semiconducting sample is a crucial aspect and has to be taken into account when aiming for a quantitative evaluation of the probed KPFM bias.

  20. Electron transport investigation of layered MoO3 oxides doped with different concentrations of Nb2O5 oxide

    International Nuclear Information System (INIS)

    Al-Khawaja, S.; Kasem, M.

    2008-07-01

    The dc and ac electric conductivity has been studied for numerous samples of molybdenum oxide MoO 3 doped with niobium oxide Nb 2 O 5 elaborated via the solid state reactions. By means of the electric resistivity and dielectricity curves obtained as a function of temperature, and according to the dopant concentration, the behaviour of these compounds has been allocated. Most of the investigated samples, which are insulating at room temperature, have been witnessed to exhibit simultaneously two different electric comportments; metallic and semiconducting within the range of low and high temperatures respectively, designated by a critical temperature related to the nature of the material. Both of these behaviours are attributed electronically to ionic conduction mechanism, occurring in the solid material formed upon doping with Nb 2 O 5 , which is utterly diffused into the layered structure of MoO 3 particularly for x≥40% concentrations and accompanied by relaxation in the dielectric function between 5 Hz and 13 M Hz.(Authors)

  1. Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

    Science.gov (United States)

    Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

    2017-07-01

    Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

  2. Theoretical study of defects Cu{sub 3}SbSe{sub 4}: Search for optimum dopants for enhancing thermoelectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Do, Dat T., E-mail: dodat@msu.edu; Mahanti, S.D., E-mail: mahanti@pa.msu.edu

    2015-03-15

    Highlights: • We present the first systematic study of defects in Cu{sub 3}SbSe{sub 4}. • Possible n-type and p-type dopants are suggested for Cu and Sb site. • Transition-metal substitutions on Sb potentially improve thermoelectric properties. • Transition-metal substitutions on Se strongly distort local crystal geometry. • p-type behavior of as synthesized Cu{sub 3}SbSe{sub 4} is most likely due to Cu. - Abstract: Cu{sub 3}SbSe{sub 4} is a promising thermoelectric material due to high thermopower (>400μV/K) at 300 K and higher. Although it has a simple crystal structure derived from zinc blende structure, previous work has shown that the physics of band gap formation is quite subtle due to the importance of active lone pair (5s{sup 2}) of Sb and the non-local exchange interaction between these and Se 5p electrons. Since for any application of semiconductors understanding the properties of defects is essential, we discuss the results of a systematic study of several point defects in Cu{sub 3}SbSe{sub 4} including vacancies and substitutions for each of the components. First principles calculations using density functional theory show that among variety of possible dopants, p-type doping can be done by substituting Sb with group IV elements including Sn, Ge, Pb and Ti and n-type doping can be done by replacing Cu by Mg, Zn. Doping at the Se site appears to be rather difficult. Electronic structure calculations also suggest that the p-type behavior seen in nominally pure Cu{sub 3}SbSe{sub 4} is most likely due to Cu vacancy rather than Se vacancy.

  3. In-vacuum scattered light reduction with black cupric oxide surfaces for sensitive fluorescence detection.

    Science.gov (United States)

    Norrgard, E B; Sitaraman, N; Barry, J F; McCarron, D J; Steinecker, M H; DeMille, D

    2016-05-01

    We demonstrate a simple and easy method for producing low-reflectivity surfaces that are ultra-high vacuum compatible, may be baked to high temperatures, and are easily applied even on complex surface geometries. Black cupric oxide (CuO) surfaces are chemically grown in minutes on any copper surface, allowing for low-cost, rapid prototyping, and production. The reflective properties are measured to be comparable to commercially available products for creating optically black surfaces. We describe a vacuum apparatus which uses multiple blackened copper surfaces for sensitive, low-background detection of molecules using laser-induced fluorescence.

  4. Solution deposited and modified iron oxide for enhanced solar water splitting

    Science.gov (United States)

    Abel, Anthony J.

    Growing worldwide energy demand coupled with an increasing awareness of anthropogenic climate change has driven research into carbon-neutral and solar-derived energy sources. One attractive strategy is the storage of solar energy in the bonds of H2 formed by photoelectrochemical (PEC) water splitting. Hematite, an iron oxide, has been widely investigated as a candidate material for PEC water splitting due to its stability, non-toxicity, earth abundance and consequent low cost, and a theoretical 15% solar-to-hydrogen conversion efficiency. However, poor electrical properties and slow rates of the water oxidation reaction have limited its potential as an economical water splitting catalyst. Additionally, the most efficient hematite-based devices are fabricated via expensive, vacuum-phase techniques, limiting scalability to broad integration into the energy supply. In this thesis, I develop a new, solution-based deposition method for high quality, planar hematite thin films using successive ionic layer adsorption and reaction (SILAR). The constant geometry and tight control over layer thickness possible with SILAR makes these films ideal model systems to understand the two key steps of PEC water oxidation: charge separation and interfacial hole transfer. In Chapter 3, I report on facile annealing treatments to dope hematite with Ti and Sn, and I show that these impurity atoms at the hematite/electrolyte interface increase hole transfer efficiency from nearly 0 to above 60%. However, charge separation remains below 15% with these dopants incorporated via solid state diffusion, mainly due to low hole mobility. To overcome this associated small transport length, extremely thin hematite coatings were deposited on Sb:SnO2 monolayer inverse opal scaffolds. With this modified substrate, photocurrent increased proportionately to the surface area of the scaffold. While Chapter 3 discusses incorporation of dopants via solid state diffusion, Chapter 4 examines methods to

  5. Photoproducts of tetracycline and oxytetracycline involving self-sensitized oxidation in aqueous solutions: Effects of Ca2+ and Mg2+

    Institute of Scientific and Technical Information of China (English)

    Yong Chen; Hua Li; Zongping Wang; Tao Tao; Chun Hu

    2011-01-01

    Tetracyclines constitute one of the most important antibiotic families and represent a classic example of phototoxicity.The photoproducts of tetracyclines and their parent compounds have potentially adverse effects on natural ecosystem.In this study,the self-sensitized oxidation products of tetracycline (TC) and oxytetracycline (OTC) were determined and the effects of Ca2+ and Mg2+on self-sensitized degradation were investigated.The Ca2+ and Mg2+ in the natural water sample accounted for enhancement (pH 7.3)and inhibition (pH 9.0) of photodegradation of TC and OTC due to the formation of metal-ions complexes.The formation of Mg2+ complexes was unfavorable for the photodegradation of the tetracyclines at both pH values.In contrast,the Ca2+ complexes facilitated the attack of singlet oxygen (1O2) arising from self-sensitization at pH 7.3 and enhanced TC photodegradation.For the first time,selfsensitized oxidation products of TC and OTC were verified by quenching experiments and detected by LC/ESI-DAD-MS.The products had a nominal mass 14 Da higher than the parent drugs (designated M+14),which resulted from the 1O2 attack of the dimethylamino group on the C-4 atom of the tetracyclines.The presence of Ca2+ and Mg2+ also affected the generation of M+14 due to the formation of metal-ions complexes with TC and OTC.The findings suggest that the metal-ion complexation has significant impact on the selfsensitized oxidation processes and the photoproducts of tetracyclines.

  6. Organometallic tris(8-hydroxyquinoline)aluminum complexes as buffer layers and dopants in inverted organic solar cells

    International Nuclear Information System (INIS)

    Tolkki, Antti; Kaunisto, Kimmo; Heiskanen, Juha P.; Omar, Walaa A.E.; Huttunen, Kirsi; Lehtimäki, Suvi; Hormi, Osmo E.O.; Lemmetyinen, Helge

    2012-01-01

    Tris(8-hydroxyquinoline)aluminum (Alq 3 ) is a frequently used material for organic light emitting diodes. The electronic properties and solubility can be tuned by chemical tailoring of the quinoline part, which makes it an interesting candidate for organic solar cells. Steady-state absorption and fluorescence, as well as time-resolved fluorescence properties of the parent Alq 3 and a series of complexes consisting of derivatives, such as 4-substituted pyrazol, methylpyrazol, arylvinyl, and pyridinoanthrene moieties, of the quinoline ligand, were studied in solutions and in thin films. Suitability of the complexes as anodic buffer layers or dopants in inverted organic solar cells based on the well known bulk heterojunction of poly(3-hexylthiophene) (P3HT) and phenyl-C 61 -butyric acid methyl ester (PCBM) was tested. The devices equipped with the derivatives showed higher power conversion efficiency (η) compared to the photocells containing the parent Alq 3 . Open circuit voltage (V oc ) was increased when the derivatives were utilized as the anodic buffer layer. Doping of the P3HT:PCBM with a small amount of Alq 3 or its derivative improved short circuit current density, V oc , fill factor, and η, while the series resistance decreased. In addition, the devices were stable in air over several weeks without encapsulation. Possible mechanisms leading to the improvements in the photovoltaic performance by using the parent Alq 3 or its derivative as buffer layer or dopant are discussed. - Highlights: ► Tris(8-hydroxyquinoline)aluminum (Alq 3 ) complexes in inverted organic solar cells. ► The Alq 3 complexes were used as an anodic buffer layer and as a dopant. ► Efficiency increased and the derivatives revealed varying open circuit voltage. ► Photovoltaic performance was stable after storage in a dark ambient atmosphere.

  7. Selective oxidation with nanoporous silica supported sensitizers: An environment friendly process using air and visible light

    Energy Technology Data Exchange (ETDEWEB)

    Saint-Cricq, Philippe; Pigot, Thierry; Blanc, Sylvie [Institut des Sciences Analytiques et de Physicochimie pour l' Environnement et les Materiaux, Universite de Pau et des Pays de l' Adour, Helioparc-2 Av. du President Angot, F-64053 Pau Cedex 09 (France); Lacombe, Sylvie, E-mail: sylvie.lacombe@univ-pau.fr [Institut des Sciences Analytiques et de Physicochimie pour l' Environnement et les Materiaux, Universite de Pau et des Pays de l' Adour, Helioparc-2 Av. du President Angot, F-64053 Pau Cedex 09 (France)

    2012-04-15

    Highlights: Black-Right-Pointing-Pointer Photo-sensitizers were covalently grafted on silica matrices. Black-Right-Pointing-Pointer Grafted powdered silica was characterized by diffuse reflectance and emission spectroscopy. Black-Right-Pointing-Pointer Selective solvent-free photo-oxygenation was carried out with air under visible light. Black-Right-Pointing-Pointer Singlet generation and reactivity at the gas-solid interface was demonstrated. - Abstract: Transparent and porous silica xerogels containing various grafted photosensitizers (PSs) such as anthraquinone derivatives, Neutral Red, Acridine Yellow and a laboratory-made dicyano aromatics (DBTP) were prepared. In most cases, the xerogels were shown to be mainly microporous by porosimetry. The PSs were characterized in the powdered monoliths (form, aggregation, concentration) by electronic spectroscopy which also proved to be a useful tool for monitoring the material evolution after irradiation. These nanoporous xerogels were used as microreactors for gas/solid solvent-free photo-oxygenation of dimethylsulfide (DMS) using visible light and air as the sole reactant. All these PSs containing monoliths were efficient for gas-solid DMS oxidation, leading to sulfoxide and sulfone in varying ratios. As these polar oxidation products remained strongly adsorbed on the silica matrix, the gaseous flow at the outlet of the reactor was totally free of sulfide and odorless. The best results in term of yield and initial rate of degradation of DMS were obtained with DBTP containing xerogels. Moreover, as these materials were reusable without loss of efficiency and sensitizer photobleaching after a washing regeneration step, the concept of recyclable sensitizing materials was approved, opening the way to green process.

  8. Multifunctional pH-sensitive superparamagnetic iron-oxide nanocomposites for targeted drug delivery and MR imaging.

    Science.gov (United States)

    Zhu, Lijuan; Wang, Dali; Wei, Xuan; Zhu, Xinyuan; Li, Jianqi; Tu, Chunlai; Su, Yue; Wu, Jieli; Zhu, Bangshang; Yan, Deyue

    2013-08-10

    A multifunctional pH-sensitive superparamagnetic iron-oxide (SPIO) nanocomposite system was developed for simultaneous tumor magnetic resonance imaging (MRI) and therapy. Small-size SPIO nanoparticles were chemically bonded with antitumor drug doxorubicin (DOX) and biocompatible poly(ethylene glycol) (PEG) through pH-sensitive acylhydrazone linkages, resulting in the formation of SPIO nanocomposites with magnetic targeting and pH-sensitive properties. These DOX-conjugated SPIO nanocomposites exhibited not only good stability in aqueous solution but also high saturation magnetizations. Under an acidic environment, the DOX was quickly released from the SPIO nanocomposites due to the cleavage of pH-sensitive acylhydrazone linkages. With the help of magnetic field, the DOX-conjugated SPIO nanocomposites showed high cellular uptake, indicating their magnetic targeting property. Comparing to free DOX, the DOX-conjugated SPIO nanocomposites showed better antitumor effect under magnetic field. At the same time, the relaxivity value of these SPIO nanocomposites was higher than 146s(-1)mM(-1) Fe, leading to ~4 times enhancement compared to that of free SPIO nanoparticles. As a negative contrast agent, these SPIO nanocomposites illustrated high resolution in MRI diagnosis of tumor-bearing mice. All of these results confirm that these pH-sensitive SPIO nanocomposites are promising hybrid materials for synergistic MRI diagnosis and tumor therapy. Copyright © 2013 Elsevier B.V. All rights reserved.

  9. Dioxin-induced acute cardiac mitochondrial oxidative damage and increased activity of ATP-sensitive potassium channels in Wistar rats

    International Nuclear Information System (INIS)

    Pereira, Susana P.; Pereira, Gonçalo C.; Pereira, Cláudia V.; Carvalho, Filipa S.; Cordeiro, Marília H.; Mota, Paula C.; Ramalho-Santos, João; Moreno, António J.; Oliveira, Paulo J.

    2013-01-01

    The environmental dioxin 2,3,7,8-Tetrachlorodibenzo-p-dioxin (TCDD) is classified as a Group 1 human carcinogen and teratogenic agent. We hypothesize that TCDD-induced oxidative stress may also interfere with mitochondrial ATP-sensitive potassium channels (mitoKATP), which are known to regulate and to be regulated by mitochondrial redox state. We investigated the effects of an acute treatment of male Wistar rats with TCDD (50 μg/kg i.p.) and measured the regulation of cardiac mitoKATP. While the function of cardiac mitochondria was slightly depressed, mitoKATP activity was 52% higher in animals treated with TCDD. The same effects were not observed in liver mitochondria isolated from the same animals. Our data also shows that regulation of mitochondrial ROS production by mitoKATP activity is different in both groups. To our knowledge, this is the first report to show that TCDD increases mitoKATP activity in the heart, which may counteract the increased oxidative stress caused by the dioxin during acute exposure. -- Highlights: •Acute TCDD treatment of Wistar rats causes cardiac oxidative stress. •Acute TCDD treatment causes cardiac mitochondrial alterations. •Mitochondrial liver vs. heart alterations are distinct. •TCDD treatment resulted in altered activity of cardiac mitochondrial K-ATP channels. -- Dioxin alters the regulation of cardiac mitochondrial ATP-sensitive potassium channels and disturbs mitochondrial physiology

  10. The fabrication of high sensitivity gold nanorod H2S gas sensors utilizing the highly uniform anodic aluminum oxide template

    Directory of Open Access Journals (Sweden)

    Chien-Yu Li

    2016-12-01

    Full Text Available Gold nanorod were fabricated using anodic alumina oxide template for H2S gas detection. The nanorod gas sensor exhibits high surface density and contact area, which can increase detection sensitivity. The anodic alumina oxide template contains an array of pores, with a width of 70 nm and a length of 27μm. Au nanorod were obtained through electro-deposition under a pulse bias of −1 V. The resistance of the Au nanorod was recorded upon exposure to various concentrations of H2S. The resistance could be attributed to the high electron affinity between sulfide and Au nanorod. Au–sulfide bonds provide strong bonding, which could alter the conductivity of the sensor. The gas sensor exhibits high sensitivity and short response time for H2S detection at room temperature.

  11. In silico optimization of phase-change materials for digital memories: a survey of first-row transition-metal dopants for Ge2Sb2Te5

    International Nuclear Information System (INIS)

    Skelton, J M; Elliott, S R

    2013-01-01

    Phase-change materials are the alloys at the heart of an emerging class of next-generation, non-volatile digital memory technologies. However, the widely studied Ge–Sb–Te system possesses several undesirable properties, and enhancing its properties, e.g. by doping, is an area of active research. Various first-row transition-metal dopants have been shown to impart useful property enhancements, but a systematic study of the entire period has yet to be undertaken, and little has been done to investigate their interaction with the host material at the atomic level. We have carried out first-principles computer simulations of the complete phase-change cycle in Ge 2 Sb 2 Te 5 doped with each of the ten first-row transition metals. In this article, we present a comprehensive survey of the electronic, magnetic and optical properties of these doped materials. We discuss in detail their atomic-level structure, and relate the microscopic behaviours of the dopant atoms to their influence on the Ge 2 Sb 2 Te 5 host. By considering an entire family of similar materials, we identify trends and patterns which might be used to predict suitable dopants for optimizing materials for specific phase-change applications. The computational method employed here is general, and this materials-discovery approach could be applied in the future to study other families of potential dopants for such materials. (paper)

  12. Depolymerization of organosolv lignin using doped porous metal oxides in supercritical methanol

    DEFF Research Database (Denmark)

    Warner, Genoa; Hansen, Thomas Søndergaard; Riisager, Anders

    2014-01-01

    conversion to methanol-soluble products, without char formation, were based on copper in combination with other dopants based on relatively earth-abundant metals. Nearly complete conversion of lignin to bio-oil composed of monomers and low-mass oligomers with high aromatic content was obtained in 6. h at 310......An isolated, solvent-extracted lignin from candlenut (Aleurites moluccana) biomass was subjected to catalytic depolymerization in the presence of supercritical methanol, using a range of porous metal oxides derived from hydrotalcite-like precursors. The most effective catalysts in terms of lignin...

  13. On the use of the distortion-sensitivity approach in examining the role of linguistic abilities in speech understanding in noise.

    Science.gov (United States)

    Goverts, S Theo; Huysmans, Elke; Kramer, Sophia E; de Groot, Annette M B; Houtgast, Tammo

    2011-12-01

    Researchers have used the distortion-sensitivity approach in the psychoacoustical domain to investigate the role of auditory processing abilities in speech perception in noise (van Schijndel, Houtgast, & Festen, 2001; Goverts & Houtgast, 2010). In this study, the authors examined the potential applicability of the distortion-sensitivity approach for investigating the role of linguistic abilities in speech understanding in noise. The authors applied the distortion-sensitivity approach by measuring the processing of visually presented masked text in a condition with manipulated syntactic, lexical, and semantic cues and while using the Text Reception Threshold (George et al., 2007; Kramer, Zekveld, & Houtgast, 2009; Zekveld, George, Kramer, Goverts, & Houtgast, 2007) method. Two groups that differed in linguistic abilities were studied: 13 native and 10 non-native speakers of Dutch, all typically hearing university students. As expected, the non-native subjects showed substantially reduced performance. The results of the distortion-sensitivity approach yielded differentiated results on the use of specific linguistic cues in the 2 groups. The results show the potential value of the distortion-sensitivity approach in studying the role of linguistic abilities in speech understanding in noise of individuals with hearing impairment.

  14. In vitro bioactivity behavior of modified multicomponent borate glasses containing dopants of Ag2O, CuO, CeO2 or V2O5

    Science.gov (United States)

    Marzouk, M. A.; ElBatal, F. H.; Ghoneim, N. A.

    2018-02-01

    Some multi-component borate glasses containing dopants of Ag2O, CuO, CeO2 or V2O5 were prepared. Multi-characterization techniques were carried out to investigate their bioactivity, corrosion weight loss after immersion in phosphate solution. Controlled thermal heat-treatment by two-step technique was done to convert the prepared glasses to their corresponding glass-ceramic derivatives. X-ray diffraction analysis was performed to identify the crystalline phases formed by thermal treatment. Infrared absorption of glasses and glass-ceramics reveal vibrational bands due to combined main triangular and tetrahedral borate groups in their specific wavenumbers besides some sharing of phosphate group. After immersion in the phosphate solution, two extra characteristic peaks are generated indicating the bioactivity of the studied glasses and glass-ceramics through the formation of calcium phosphate (hydroxyapatite). X-ray diffraction data indicate the formation of crystalline phases which are variable with the introduced dopants. The main crystalline phase identified is calcium borate together with some other phases some of which contain phosphate ions. These data indicate that the presence of CaO and P2O5 initiates phase separation and subsequent crystallization of the parent and doped glasses. Weight loss data indicate that glass-ceramics are obviously durable than the parent glasses. SEM micrographs of glass-ceramics before immersion show multiconstituent crystalline phases due to the basic chemical composition consisting of multicomponent mixed alkali and alkaline earth oxides beside P2O5 and with the main B2O3 constituent. After immersion, the crystalline phases are identified to be more distinct in different shapes because of the multi-composition involved.

  15. Fabrication of highly catalytic silver nanoclusters/graphene oxide nanocomposite as nanotag for sensitive electrochemical immunoassay

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jiamian; Wang, Xiuyun; Wu, Shuo, E-mail: wushuo@dlut.edu.cn; Song, Jie; Zhao, Yanqiu; Ge, Yanqiu; Meng, Changgong

    2016-02-04

    Silver nanoclusters and graphene oxide nanocomposite (AgNCs/GRO) is synthesized and functionalized with detection antibody for highly sensitive electrochemical sensing of carcinoembryonic antigen (CEA), a model tumor marker involved in many cancers. AgNCs with large surface area and abundant amount of low-coordinated sites are synthesized with DNA as template and exhibit high catalytic activity towards the electrochemical reduction of H{sub 2}O{sub 2}. GRO is employed to assemble with AgNCs because it has large specific surface area, super electronic conductivity and strong π-π stacking interaction with the hydrophobic bases of DNA, which can further improve the catalytic ability of the AgNCs. Using AgNCs/GRO as signal amplification tag, an enzyme-free electrochemical immunosensing protocol is designed for the highly sensitive detection of CEA on the capture antibody functionalized immunosensing interface. Under optimal conditions, the designed immunosensor exhibits a wide linear range from 0.1 pg mL{sup −1} to 100 ng mL{sup −1} and a low limit of detection of 0.037 pg mL{sup −1}. Practical sample analysis reveals the sensor has good accuracy and reproducibility, indicating the great application prospective of the AgNCs/GRO in fabricating highly sensitive immunosensors, which can be extended to the detection of various kinds of low abundance disease related proteins. - Highlights: • An enzyme-free electrochemical immunosensor is reported for detecting proteins. • A silver nanocluster/graphene oxide composite is synthesized as nanotag. • The nanotags exhibit highly catalytic activity to the electro-reduction of H{sub 2}O{sub 2}. • The as-fabricated immunosensor could detect protein in serum samples.

  16. Enhanced Sensitivity of Anti-Symmetrically Structured Surface Plasmon Resonance Sensors with Zinc Oxide Intermediate Layers

    Directory of Open Access Journals (Sweden)

    Nan-Fu Chiu

    2013-12-01

    Full Text Available We report a novel design wherein high-refractive-index zinc oxide (ZnO intermediary layers are used in anti-symmetrically structured surface plasmon resonance (SPR devices to enhance signal quality and improve the full width at half maximum (FWHM of the SPR reflectivity curve. The surface plasmon (SP modes of the ZnO intermediary layer were excited by irradiating both sides of the Au film, thus inducing a high electric field at the Au/ZnO interface. We demonstrated that an improvement in the ZnO (002 crystal orientation led to a decrease in the FWHM of the SPR reflectivity curves. We optimized the design of ZnO thin films using different parameters and performed analytical comparisons of the ZnO with conventional chromium (Cr and indium tin oxide (ITO intermediary layers. The present study is based on application of the Fresnel equation, which provides an explanation and verification for the observed narrow SPR reflectivity curve and optical transmittance spectra exhibited by (ZnO/Au, (Cr/Au, and (ITO/Au devices. On exposure to ethanol, the anti-symmetrically structured showed a huge electric field at the Au/ZnO interface and a 2-fold decrease in the FWHM value and a 1.3-fold larger shift in angle interrogation and a 4.5-fold high-sensitivity shift in intensity interrogation. The anti-symmetrically structured of ZnO intermediate layers exhibited a wider linearity range and much higher sensitivity. It also exhibited a good linear relationship between the incident angle and ethanol concentration in the tested range. Thus, we demonstrated a novel and simple method for fabricating high-sensitivity, high-resolution SPR biosensors that provide high accuracy and precision over relevant ranges of analyte measurement.

  17. Determination of phenols by flow injection and liquid chromatography with on-line quinine-sensitized photo-oxidation and quenched luminol chemiluminescence detection

    International Nuclear Information System (INIS)

    Zhang Wei; Danielson, Neil D.

    2003-01-01

    An on-line quinine-sensitized photo-oxidation with quenched chemiluminescence (CL) detection method is developed for phenols using flow injection (FI) and liquid chromatography (LC). This detection method is based on the decrease of light emission from the luminol CL reaction due to the photo-oxidation of phenols that scavenge the photogenerated reactive oxygen species (e.g. singlet oxygen ( 1 O 2 ) and superoxide (O 2 · - )). On-line photo-oxidation is achieved using a coil photo-reactor made from fluoroethylene-propylene copolymer tubing (3048 mmx0.25 mm i.d.) coiled around a mercury UV lamp. A buffer of pH 7 and a concentration of 350 μM for quinine sulfate are determined optimum for the sensitized photo-oxidation. Using a carrier system flow rate of 60 μl/min, calibration curves taken by FI for 10 phenolic compounds in aqueous solutions showed this decreasing sensitivity order: 4-chlorophenol, phenol, 4-nitrophenol, 3-hydroxy-L-kynurenine, 2-nitrophenol, salicylate, 3-nitrophenol, catechol, 2,4-dinitrophenol, and 2,4-dichlorophenol. This detection method using two tandem coil photo-reactors is also applied for the LC separation of phenol, 4-nitrophenol and 4-chlorophenol on an octadecyl (C18) silica LC column using acetonitrile-H 2 O (40:60, v/v) as a mobile phase. The quenched CL detection limits (about 1 μM or 20 pmol) for phenol and 4-chlorophenol are comparable to those for UV detection at 254 nm. Some selectivity in the quenched CL detection is evident by no interference in the FI phenol response even when benzaldehyde and phenethanol concentrations are 8 and 15 times that of phenol

  18. Structural, optical and electrical properties of indium tin oxide thin films prepared by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Benamar, E.; Rami, M.; Messaoudi, C.; Sayah, D.; Ennaoui, A. [Deptartmento de Physique, Laboratoire de Physique des Materiaux, Faculte des Sciences, BP 1014, Ave Inb Battouta, Rabat (Morocco)

    1998-11-27

    Spray pyrolysis process has been used to deposit highly transparent and conducting films of tin-doped indium oxide onto glass substrates. The electrical, structural and optical properties have been investigated as a function of various deposition parameters namely dopant concentrations, temperature and nature of substrate. The morphology of the surface as a function of the substrate temperature has been studied using atomic force microscopy. XRD has shown that deposited films are polycrystalline without second phases and have a preferred orientation (4 0 0). Indium tin oxide layers with low resistivity values around 4x10{sup -5} {Omega} cm and transmission coefficients in the visible and near-infrared range of about 85-90% have been easily obtained

  19. Effects of Zn2+ and Pb2+ dopants on the activity of Ga2O3-based photocatalysts for water splitting.

    Science.gov (United States)

    Wang, Xiang; Shen, Shuai; Jin, Shaoqing; Yang, Jingxiu; Li, Mingrun; Wang, Xiuli; Han, Hongxian; Li, Can

    2013-11-28

    Zn-doped and Pb-doped β-Ga2O3-based photocatalysts were prepared by an impregnation method. The photocatalyst based on the Zn-doped β-Ga2O3 shows a greatly enhanced activity in water splitting while the Pb-doped β-Ga2O3 one shows a dramatic decrease in activity. The effects of Zn(2+) and Pb(2+) dopants on the activity of Ga2O3-based photocatalysts for water splitting were investigated by HRTEM, XPS and time-resolved IR spectroscopy. A ZnGa2O4-β-Ga2O3 heterojunction is formed in the surface region of the Zn-doped β-Ga2O3 and a slower decay of photogenerated electrons is observed. The ZnGa2O4-β-Ga2O3 heterojunction exhibits type-II band alignment and facilitates charge separation, thus leading to an enhanced photocatalytic activity for water splitting. Unlike Zn(2+) ions, Pb(2+) ions are coordinated by oxygen atoms to form polyhedra as dopants, resulting in distorted surface structure and fast decay of photogenerated electrons of β-Ga2O3. These results suggest that the Pb dopants act as charge recombination centers expediting the recombination of photogenerated electrons and holes, thus decreasing the photocatalytic activity.

  20. Understanding lattice defects to influence ferromagnetic order of ZnO nanoparticles by Ni, Cu, Ce ions

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Kuldeep Chand, E-mail: dkuldeep.physics@gmail.com [Department of Physics, Panjab University, Chandigarh 160014 (India); Kotnala, R.K., E-mail: rkkotnala@gmail.com [CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2017-02-15

    Future spintronics technologies based on diluted magnetic semiconductors (DMS) will rely heavily on a sound understanding of the microscopic origins of ferromagnetism in such materials. It remains unclear, however, whether the ferromagnetism in DMS is intrinsic - a precondition for spintronics - or due to dopant clustering. For this, we include a simultaneous doping from transition metal (Ni, Cu) and rare earth (Ce) ions in ZnO nanoparticles that increase the antiferromagnetic ordering to achieve high-T{sub c} ferromagnetism. Rietveld refinement of XRD patterns indicate that the dopant ions in ZnO had a wurtzite structure and the dopants, Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions, are highly influenced the lattice constants to induce lattice defects. The Ni, Cu, Ce ions in ZnO have nanoparticles formation than nanorods was observed in pure sample. FTIR involve some organic groups to induce lattice defects and the metal-oxygen bonding of Zn, Ni, Cu, Ce and O atoms to confirm wurtzite structure. Raman analysis evaluates the crystalline quality, structural disorder and defects in ZnO lattice with doping. Photoluminescence spectra have strong near-band-edge emission and visible emission bands responsible for defects due to oxygen vacancies. The energy band gap is calculated using Tauc relation. Room temperature ferromagnetism has been described due to bound magnetic polarons formation with Ni{sup 2+}, Cu{sup 2+}, Ce{sup 3+} ions in ZnO via oxygen vacancies. The zero field and field cooling SQUID measurement confirm the strength of antiferromagnetism in ZnO. The field cooling magnetization is studied by Curie-Weiss law that include antiferromagnetic interactions up to low temperature. The XPS spectra have involve +3/+4 oxidation states of Ce ions to influence the observed ferromagnetism. - Graphical abstract: The lattice defects/vacancies attributed by Ni and Ce ions in the wurtzite ZnO structure are responsible in high T{sub c} -ferromagnetism due to long-range magnetic

  1. Graphene Oxide Based Nanocarrier Combined with a pH-Sensitive Tracer: A Vehicle for Concurrent pH Sensing and pH-Responsive Oligonucleotide Delivery.

    Science.gov (United States)

    Hsieh, Chia-Jung; Chen, Yu-Cheng; Hsieh, Pei-Ying; Liu, Shi-Rong; Wu, Shu-Pao; Hsieh, You-Zung; Hsu, Hsin-Yun

    2015-06-03

    We chemically tuned the oxidation status of graphene oxide (GO) and constructed a GO-based nanoplatform combined with a pH-sensitive fluorescence tracer that is designed for both pH sensing and pH-responsive drug delivery. A series of GOs oxidized to distinct degrees were examined to optimize the adsorption of the model drug, poly dT30. We determined that highly oxidized GO was a superior drug-carrier candidate in vitro when compared to GOs oxidized to lesser degrees. In the cell experiment, the synthesized pH-sensitive rhodamine dye was first applied to monitor cellular pH; under acidic conditions, protonated rhodamine fluoresces at 588 nm (λex=561 nm). When the dT30-GO nanocarrier was introduced into cells, a rhodamine-triggered competition reaction occurred, and this led to the release of the oligonucleotides and the quenching of rhodamine fluorescence by GO. Our results indicate high drug loading (FAM-dT30/GO=25/50 μg/mL) and rapid cellular uptake (<0.5 h) of the nanocarrier which can potentially be used for targeted RNAi delivery to the acidic milieu of tumors.

  2. Interfaces and nanostructures of oxide octahedral frameworks

    Directory of Open Access Journals (Sweden)

    Felip eSandiumenge

    2014-08-01

    Full Text Available In the past decade, the rich physics exhibited by solid interfaces combining octahedral framework structures of transition metal oxides has fascinated the materials science community. However, the behavior of these materials still elude the current understanding of classical semiconductor and metal epitaxy. The reason for that is rooted in the surprising versatility of linked coordination units to adapt to a dissimilar substrate and the strong sensitivity of correlated oxides to external perturbations. The confluence of atomic control in oxide thin film epitaxy, state of the art high spatial resolution characterization techniques, and electronic structure computations, has allowed in recent years to obtain first insights on the underlying microscopic mechanisms governing the epitaxy of these fascinating materials. Here, we shortly review these mechanisms and highlight their potential in the design of novel nanostructures with enhanced functionalities.

  3. Quantum Dot Sensitized Solar Cells Based on Ternary Metal Oxide Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Wenyong [Univ. of Wyoming, Laramie, WY (United States); Tang, Jinke [Univ. of Wyoming, Laramie, WY (United States); Dahnovsky, Yuri [Univ. of Wyoming, Laramie, WY (United States); Pikal, Jon M [Univ. of Wyoming, Laramie, WY (United States); Chien, TeYu [Univ. of Wyoming, Laramie, WY (United States)

    2017-11-03

    In Phase I of this project we investigate quantum dot sensitized solar cells (QDSSCs) based on ternary metal oxide nanowires and study the physical and chemical mechanisms that govern device operation. Our research has the following five objectives: (1) synthesis of ternary metal oxide nanowires, (2) synthesis of QDs and exploration of non-solution based QD deposition methods, (3) physical and electro-optical characterizations of fabricated solar devices, (4) device modeling and first-principle theoretical study of transport physics, and (5) investigation of long-term stability issues of QD sensitized solar cells. In Phase II of this project our first major research goal is to investigate magnetically doped quantum dots and related spin polarization effect, which could improve light absorption and suppress electron relaxation in the QDs. We will utilize both physical and chemical methods to synthesize these doped QDs. We will also study magnetically modified nanowires and introduce spin-polarized transport into QDSSCs, and inspect its impact on forward electron injection and back electron transfer processes. Our second goal is to study novel solid-state electrolytes for QDSSCs. Specifically, we will inspect a new type of polymer electrolytes based on a modified polysulfide redox couple, and examine the effect of their electrical properties on QDSSC performance. These solid-state electrolytes could also be used as filler materials for in situ sample fracturing in STM and enable cross-sectional interface examination of QD/nanowire structures. Our third research goal is to examine the interfacial properties such as energy level alignment at QD/nanowire interfaces using the newly developed Cross-sectional Scanning Tunneling Microscopy and Spectroscopy technique for non-cleavable materials. This technique allows a direct probing of band structures and alignment at device interfaces, which could generate important insight into the mechanisms that govern QDSSC operation

  4. Electrochemiluminescence resonance energy transfer between graphene quantum dots and graphene oxide for sensitive protein kinase activity and inhibitor sensing

    Energy Technology Data Exchange (ETDEWEB)

    Liang, Ru-Ping; Qiu, Wei-Bin; Zhao, Hui-Fang; Xiang, Cai-Yun; Qiu, Jian-Ding, E-mail: jdqiu@ncu.edu.cn

    2016-01-21

    Herein, a novel electrochemiluminescence resonance energy transfer (ECL-RET) biosensor using graphene quantum dots (GQDs) as donor and graphene oxide (GO) as acceptor for monitoring the activity of protein kinase was presented for the first time. Anti-phosphoserine antibody conjugated graphene oxide (Ab-GO) nonocomposite could be captured onto the phosphorylated peptide/GQDs modified electrode surface through antibody–antigen interaction in the presence of casein kinase II (CK2) and adenosine 5′-triphosphate (ATP), resulting in ECL from the GQDs quenching by closely contacting GO. This ECL quenching degree was positively correlated with CK2 activity. Therefore, on the basis of ECL-RET between GQDs and GO, the activity of protein kinase can be detected sensitively. This biosensor can also be used for quantitative analysis CK2 activity in serum samples and qualitative screening kinase inhibition, indicating the potential application of the developed method in biochemical fundamental research and clinical diagnosis. - Highlights: • We reported a novel ECL-RET biosensor for sensitive analysis of casein kinase II activity. • The successful ECL-RET between GQDs and GO could be established. • GQDs was employed for casein kinase II activity monitoring and inhibition assay. • Highly sensitive detection of CK2 activity and inhibition was achieved.

  5. Defect and dopant kinetics in laser anneals of Si

    International Nuclear Information System (INIS)

    La Magna, A.; Fisicaro, G.; Mannino, G.; Privitera, V.; Piccitto, G.; Svensson, B.G.; Vines, L.

    2008-01-01

    In this work a modeling approach is applied to investigate the kinetics of the defect-dopant system in the extremely far-from-the equilibrium conditions caused by the laser irradiation in Si. A rigorous derivation of the master equations for the evolution of the defect-impurity system is obtained starting from the Boltzmann's formalism. The model derived is not limited by the stringent hypothesis of instantaneous equilibration of the local system energy to the lattice thermal field. This fact allows: (a) the formalization of a reliable theoretical formalism for the study of evolving defect-impurity systems in a non-uniform fast varying thermal field and (b) the generalization of the kinetic parameters (e.g. diffusivity, clustering rate constants, etc.). Early comparisons between simulations and experimental analysis of the processes are discussed. These results indicate the reliability of the energetic calibration for the self-interstitial clusters derived using conventional thermal processes

  6. Doping of (Bi,Pb)-2223 with metal oxides

    International Nuclear Information System (INIS)

    Goehring, D.; Vogt, M.; Wischert, W.; Kemmler-Sack, S.

    1997-01-01

    The effect of doping on formation, superconductivity and pinning forces of (Bi,Pb)-2223 was studied for several dopants. They can be subdivided into promoters (Cu, Mn at low doping level of x=0.1 and Rh) and inhibitors (Mg, Al, Sn, Co, Y, Pd and high substitution levels of Mn and Ni) of the transformation of the precursor material into (Bi,Pb)-2223. According to X-ray diffraction (XRD) studies the incorporation of the dopant into the 2223 lattice is restricted to a very low doping level. Higher dopant concentrations are accompanied by a segregation of secondary phases. These segregations are not effective in the process of creating flux pinning centres. A depression of T c is observed for 2223 materials with the dopants Co, Ni and Pd. (orig.)

  7. Lanthanide ions (III) as sensitizers of melatonin oxidation in reaction mixtures providing reactive species of oxygen and nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Kaczmarek, Małgorzata, E-mail: mkaczmar@amu.edu.pl

    2015-06-15

    Chemiluminescence (CL) of the reactive systems providing strong oxidants (reactive species of oxygen and nitrogen) containing lanthanide ions (III) and melatonin, was studied. Kinetic curves of emission decay and spectral distributions of chemiluminescence were obtained. Analysis of differences in the intensity of chemiluminescence and CL spectra proved that excitation of Tb(III) and Dy(III) ions takes place with the energy transfer from the products of melatonin oxidation: N{sup 1}-acetyl-N{sup 2}-formyl-5-methoxykynuramine (AFMK) and N{sup 1}-acetyl-5-methoxykynuramine (AMK) to the lanthanide ions. In the system Fe(II)/Fe(III)–H{sub 2}O{sub 2}–Mel–Tb(III) a linear correlation was established between the integrated CL intensity and melatonin concent. - Highlights: • Chemiluminescence (CL) of melatonin (Mel) oxidation by reactive species of oxygen and nitrogen. • Tb(III) and Dy(III) ions as sensitizers of a melatonin oxidation process. • New CL method for determination of melatonin in pharmaceutical preparations based on CL of Fe(II)/Fe(III)–H{sub 2}O{sub 2}–Mel–Tb(III) system.

  8. Study of the chlorine as dopant in synthesized polymers by plasma

    International Nuclear Information System (INIS)

    Vasquez, M.; Cruz, G.; Olayo, M.G.; Timoshina, T.; Morales, J.; Olayo, R.

    2003-01-01

    In the search of new and better dopants for semiconductor polymers, in this work the synthesis by plasma and the characterization of two doped polymers with chlorine, Pyrrole (PPy) and Thiophene (PTh) is presented. The characterization of the polymers it was carried out by FT-lR, it shows the C-Cl vibration that it is confirmed with the X-ray photoelectron spectroscopy technique (XPS). The elementary analysis shows a greater quantity of Cl in the PTh-CI compared with PPy-CI. However, this effect is not reflected in the electric conductivity since the PTh-Cl presents a lightly greater conductivity than the PPy-CI. SEM shows a formed structure of small agglomerated spheres of different size. (Author)

  9. Synthesis of Some Green Dopants for OLEDs Based on Arylamine 2,3-disubstituted Bithiophene Derivatives

    Directory of Open Access Journals (Sweden)

    Mi-Seon Song

    2013-11-01

    Full Text Available A series of green dopants based on 2,2-diphenylvinyl end-capped bithiophene and three different arylamine moieties (9-phenylcarbazole, triphenylamine, and N,N’-di-(p-tolylbenzeneamine were successfully synthesized by the Suzuki and Wittig coupling reactions. The photophysical properties of these compounds are reported. The strongest PL emitting compound with the 9-phenylcarbazole moiety has been used for fabricating an OLED device with good overall performance.

  10. Regulation of the oxidative balance with coenzyme Q10 sensitizes human glioblastoma cells to radiation and temozolomide.

    Science.gov (United States)

    Frontiñán-Rubio, Javier; Santiago-Mora, Raquel María; Nieva-Velasco, Consuelo María; Ferrín, Gustavo; Martínez-González, Alicia; Gómez, María Victoria; Moreno, María; Ariza, Julia; Lozano, Eva; Arjona-Gutiérrez, Jacinto; Gil-Agudo, Antonio; De la Mata, Manuel; Pesic, Milica; Peinado, Juan Ramón; Villalba, José M; Pérez-Romasanta, Luis; Pérez-García, Víctor M; Alcaín, Francisco J; Durán-Prado, Mario

    2018-05-18

    To investigate how the modulation of the oxidative balance affects cytotoxic therapies in glioblastoma, in vitro. Human glioblastoma U251 and T98 cells and normal astrocytes C8D1A were loaded with coenzyme Q10 (CoQ). Mitochondrial superoxide ion (O 2 - ) and H 2 O 2 were measured by fluorescence microscopy. OXPHOS performance was assessed in U251 cells with an oxytherm Clark-type electrode. Radio- and chemotherapy cytotoxicity was assessed by immunostaining of γH2AX (24 h), annexin V and nuclei morphology, at short (72 h) and long (15 d) time. Hif-1α, SOD1, SOD2 and NQO1 were determined by immunolabeling. Catalase activity was measured by classic enzymatic assay. Glutathione levels and total antioxidant capacity were quantified using commercial kits. CoQ did not affect oxygen consumption but reduced the level of O 2 - and H 2 O 2 while shifted to a pro-oxidant cell status mainly due to a decrease in catalase activity and SOD2 level. Hif-1α was dampened, echoed by a decrease lactate and several key metabolites involved in glutathione synthesis. CoQ-treated cells were twofold more sensitive than control to radiation-induced DNA damage and apoptosis in short and long-term clonogenic assays, potentiating TMZ-induced cytotoxicity, without affecting non-transformed astrocytes. CoQ acts as sensitizer for cytotoxic therapies, disarming GBM cells, but not normal astrocytes, against further pro-oxidant injuries, being potentially useful in clinical practice for this fatal pathology. Copyright © 2018 Elsevier B.V. All rights reserved.

  11. Coconut oil supplementation and physical exercise improves baroreflex sensitivity and oxidative stress in hypertensive rats.

    Science.gov (United States)

    Alves, Naiane F B; Porpino, Suênia K P; Monteiro, Matheus M O; Gomes, Enéas R M; Braga, Valdir A

    2015-04-01

    The hypothesis that oral supplementation with virgin coconut oil (Cocos nucifera L.) and exercise training would improve impaired baroreflex sensitivity (BRS) and reduce oxidative stress in spontaneously hypertensive rats (SHR) was tested. Adult male SHR and Wistar Kyoto rats (WKY) were divided into 5 groups: WKY + saline (n = 8); SHR + saline (n = 8); SHR + coconut oil (2 mL·day(-1), n = 8); SHR + trained (n = 8); and SHR + trained + coconut oil (n = 8). Mean arterial pressure (MAP) was recorded and BRS was tested using phenylephrine (8 μg/kg, intravenous) and sodium nitroprusside (25 μg·kg(-1), intravenous). Oxidative stress was measured using dihydroethidium in heart and aorta. SHR + saline, SHR + coconut oil, and SHR + trained group showed higher MAP compared with WKY + saline (175 ± 6, 148 ± 6, 147 ± 7 vs. 113 ± 2 mm Hg; p coconut oil, SHR + trained group, and SHR + trained + coconut oil groups presented lower MAP compared with SHR + saline group (148 ± 6, 147 ± 7, 134 ± 8 vs. 175 ± 6 mm Hg; p Coconut oil combined with exercise training improved BRS in SHR compared with SHR + saline group (-2.47 ± 0.3 vs. -1.39 ± 0.09 beats·min(-1)·mm Hg(-1); p coconut oil group presented reduced oxidative stress compared with SHR + saline in heart (622 ± 16 vs. 774 ± 31 AU, p coconut oil reduced oxidative stress in SHR compared with SHR + saline group (454 ± 33 vs. 689 ± 29 AU, p coconut oil combined with exercise training improved impaired BRS and reduced oxidative stress in SHR.

  12. Characteristics of thermally reduced graphene oxide and applied for dye-sensitized solar cell counter electrode

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Ching-Yuan, E-mail: cyho@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University, Chung-Li, Taiwan (China); Department of Chemistry, Center for Nanotechnology and Institute of Biomedical Technology, Chung Yuan Christian University, Chung-Li, Taiwan (China); Wang, Hong-Wen [Department of Chemistry, Center for Nanotechnology and Institute of Biomedical Technology, Chung Yuan Christian University, Chung-Li, Taiwan (China); Department of Chemistry, Chung Yuan Christian University, Chung-Li, Taiwan (China)

    2015-12-01

    Graphical abstract: Experimental process: (1) graphite oxidized to graphene oxide; (2) thermal reduction from graphene oxide to graphene; (3) applying to DSSC counter electrode. - Highlights: • Intercalated defects were eliminated by increasing reduction temperature of GO. • High reduction temperature of tGP has lower resistance, high the electron lifetime. • Higher thermal reduction of GO proposes electrocatalytic properties. • DSSC using tGP{sub 250} as counter electrode has energy conversion efficiency of 3.4%. - Abstract: Graphene oxide (GO) was synthesized from a flake-type of graphite powder, which was then reduced to a few layers of graphene sheets using the thermal reduction method. The surface morphology, phase crystallization, and defect states of the reduced graphene were determined from an electron microscope equipped with an energy dispersion spectrometer, X-ray diffraction, Raman spectroscopy, and infrared spectra. After graphene formation, the intercalated defects that existed in the GO were removed, and it became crystalline by observing impurity changes and d-spacing. Dye-sensitized solar cells, using reduced graphene as the counter electrode, were fabricated to evaluate the electrolyte activity and charge transport performance. The electrochemical impedance spectra showed that increasing the thermal reduction temperature could achieve faster electron transport and longer electron lifetime, and result in an energy conversion efficiency of approximately 3.4%. Compared to the Pt counter electrode, the low cost of the thermal reduction method suggests that graphene will enjoy a wide range of potential applications in the field of electronic devices.

  13. Characteristics of thermally reduced graphene oxide and applied for dye-sensitized solar cell counter electrode

    International Nuclear Information System (INIS)

    Ho, Ching-Yuan; Wang, Hong-Wen

    2015-01-01

    Graphical abstract: Experimental process: (1) graphite oxidized to graphene oxide; (2) thermal reduction from graphene oxide to graphene; (3) applying to DSSC counter electrode. - Highlights: • Intercalated defects were eliminated by increasing reduction temperature of GO. • High reduction temperature of tGP has lower resistance, high the electron lifetime. • Higher thermal reduction of GO proposes electrocatalytic properties. • DSSC using tGP 250 as counter electrode has energy conversion efficiency of 3.4%. - Abstract: Graphene oxide (GO) was synthesized from a flake-type of graphite powder, which was then reduced to a few layers of graphene sheets using the thermal reduction method. The surface morphology, phase crystallization, and defect states of the reduced graphene were determined from an electron microscope equipped with an energy dispersion spectrometer, X-ray diffraction, Raman spectroscopy, and infrared spectra. After graphene formation, the intercalated defects that existed in the GO were removed, and it became crystalline by observing impurity changes and d-spacing. Dye-sensitized solar cells, using reduced graphene as the counter electrode, were fabricated to evaluate the electrolyte activity and charge transport performance. The electrochemical impedance spectra showed that increasing the thermal reduction temperature could achieve faster electron transport and longer electron lifetime, and result in an energy conversion efficiency of approximately 3.4%. Compared to the Pt counter electrode, the low cost of the thermal reduction method suggests that graphene will enjoy a wide range of potential applications in the field of electronic devices.

  14. Mono(pyridine-N-oxide) analog of DOTA as a suitable organic reagent for a sensitive and selective fluorimetric determination of Ln(III) ions

    Energy Technology Data Exchange (ETDEWEB)

    Vanek, Jakub [Department of Chemistry, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno (Czech Republic); Central European Institute of Technology (CEITEC), Masaryk University, Kamenice 5, 625 00 Brno (Czech Republic); Lubal, Premysl, E-mail: lubal@chemi.muni.cz [Department of Chemistry, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno (Czech Republic); Central European Institute of Technology (CEITEC), Masaryk University, Kamenice 5, 625 00 Brno (Czech Republic); Sevcikova, Romana [Department of Chemistry, Faculty of Science, Masaryk University, Kotlarska 2, 611 37 Brno (Czech Republic); Polasek, Miloslav; Hermann, Petr [Department of Inorganic Chemistry, Faculty of Science, Charles University, Hlavova 2030, 128 40, Prague (Czech Republic)

    2012-08-15

    The mono(pyridine-N-oxide) analog of the H{sub 4}dota macrocylic ligand, H{sub 3}do3a-py{sup NO}, is capable of forming thermodynamically stable and kinetically inert Ln(III) complexes. Its Eu(III) and Tb(III) complexes display a strong long-lived fluorescence as a result of the antenna effect of the pyridine-N-oxide fluorophore in the reagent. It is shown that H{sub 3}do3a-py{sup NO} can be used as a fluorogenic reagent for the determination of Eu(III) and Tb(III) at pH 6.5 and c{sub L}=1 mM. At an excitation wavelength of 286 nm, the emission maxima are 615 nm (Eu(III)-complex), and 547 nm (Tb(III)complex). Detection limits are at concentrations around 1.0 {mu}M and linearity of the method spans over 2 orders of magnitude. The method was applied to artificial and real samples (spiked mineral waters, extracts from cathode ray tube luminophore dust) and gave satisfactory results. The method is simple, rapid, and hardly interfered by other metal ions. - Graphical Abstract: A DOTA-like ligand with pyridine-N-oxide pendant arm is used for a quick, selective and sensitive determination of Eu{sup 3+} and Tb{sup 3+} ions through sensitized emission with excitation at 286 nm. The presented fluorimetric method is not interfered by transition metal or other lanthanide(III) ions and has a high dynamic range. Highlights: Black-Right-Pointing-Pointer Quick, selective and sensitive determination of Eu{sup 3+}/Tb{sup 3+} ions was developed. Black-Right-Pointing-Pointer Sensitized emission with excitation at 286 nm through pyridine-N-oxide pendant arm. Black-Right-Pointing-Pointer No interference of transition metal or other Ln(III) ions within high dynamic range.

  15. Highly sensitive electrochemical detection of methyl salicylate using electroactive gold nanoparticles.

    Science.gov (United States)

    Umasankar, Yogeswaran; Ramasamy, Ramaraja P

    2013-11-07

    Electrochemical sensing of methyl salicylate, a key plant volatile has been achieved using a gold nanoparticle (AuNP) modified screen printed carbon electrode (SPCE). The electrochemical response of planar gold electrodes, SPCE and AuNP-SPCE in alkaline electrolyte in the presence and absence of methyl salicylate were studied to understand the amperometric response of various electrochemical reactions. The reaction mechanism includes hydrolysis of methyl salicylate and the oxidation of negative species. The electrochemical responses were recorded using cyclic voltammetry and differential pulse voltammetry techniques, where the results showed characteristic signals for methyl salicylate oxidation. Among the examined electrodes, AuNP-SPCE possessed three fold better sensitivity than planar gold and 35 times better sensitivity than SPCE (at 0.5 V). The methyl salicylate sensing by AuNP-SPCE possessed 95% of its methyl salicylate response. The electroanalytical results of soybean extract showed that AuNP-SPCE can be employed for the determination of methyl salicylate in real samples.

  16. Mechanism study on inorganic oxidants induced inhibition of Ru(bpy)₃²+ electrochemiluminescence and its application for sensitive determination of some inorganic oxidants.

    Science.gov (United States)

    Qiu, Bin; Xue, Lingling; Wu, Yanping; Lin, Zhenyu; Guo, Longhua; Chen, Guonan

    2011-07-15

    Inhibited Ru(bpy)(3)(2+) electrochemiluminescence by inorganic oxidants is investigated. Results showed that a number of inorganic oxidants can quench the ECL of Ru(bpy)(3)(2+)/tri-n-propylamine (TPrA) system, and the logarithm of the decrease in ECL intensity (ΔI) was proportional to the logarithm of analyte concentrations. Based on which, a sensitive approach for detection of these inorganic oxidants was established, e.g. the log-log plots of ΔI versus the concentration of MnO(4)(-), Cr(2)O(7)(2-) and Fe(CN)(6)(3-) are linear in the range of 1×10(-7) to 3×10(-4)M for MnO(4)(-) and Cr(2)O(7)(2-), and 1×10(-7) to 1×10(-4)M for Fe(CN)(6)(3-), with the limit of detection (LOD) of 8.0×10(-8)M, 2×10(-8)M, and 1×10(-8)M, respectively. A series of experiments such as a comparison of the inhibitory effect of different compounds on Ru(bpy)(3)(2+)/TPrA ECL, ECL emission spectra, UV-Vis absorption spectra etc. were investigated in order to discover how these inorganic analytes quench the ECL of Ru(bpy)(3)(2+)/TPrA system. A mechanism based on consumption of TPrA intermediate (TPrA(·)) by inorganic oxidants was proposed. Copyright © 2011 Elsevier B.V. All rights reserved.

  17. Interplay of dopants and defects in making Cu doped TiO{sub 2} nanoparticle a ferromagnetic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Choudhury, Biswajit, E-mail: biswa.tezu@gmail.com [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Choudhury, Amarjyoti [Department of Physics, Tezpur University, Napaam 784028, Assam (India); Borah, Debajit [Department of Chemical Engineering, Indian Institute of Technology Guwahati, Guwahati 781039, Assam (India)

    2015-10-15

    Here we have studied the role of oxygen defects and Cu dopants on ferromagnetism in Cu doped TiO{sub 2} nanoparticles with nominal Cu concentration of 2%, 4% and 6 mol%. Electron paramagnetic resonance (EPR) spectra analysis reveals the presence of Cu{sup 2+} in the distorted octahedral coordination of TiO{sub 2}. Cu d-states undergo strong p-d coupling with the valence band O 2p state of TiO{sub 2} resulting the extended absorption hump in the visible region. Photoluminescence results reveal the presence of oxygen defect related emission peaks in Cu doped TiO{sub 2}. Room temperature ferromagnetism is observed in all the Cu doped TiO{sub 2} nanoparticles. Saturation magnetization is the highest at 4 mol% and then there is a decrease in magnetization at 6 mol%. Ferromagnetism completely disappears on calcinations of 4% Cu doped TiO{sub 2} in air at 450 °C for 8 h. It is speculated that both oxygen vacancies and Cu d-states are involved in the room temperature ferromagnetism. Spin polarization occurs by the formation of bound magnetic polaron between electrons in Cu{sup 2+}d-states and the unpaired spins in oxygen vacancies. Presence of Cu{sup 2+}-Cu{sup 2+}d-d exchange interaction and Cu{sup 2+}-O{sup 2−}-Cu{sup 2+} antiferromagnetic superexchange interactions might have resulted in the reduction in magnetization at 6 mol% Cu. - Graphical abstract: Ferromagnetism in Cu doped TiO{sub 2} requires presence of both Cu dopant and oxygen vacancies. - Highlights: • Cu doped TiO{sub 2} nanoparticle displays room temperature ferromagnetism. • Ferromagnetism requires presence of both Cu and oxygen vacancies. • Antiferromagnetic interaction persists at high Cu dopant concentration. • Paramagnetism appears on air annealing of the doped system for longer period.

  18. Capability of parasulfonato calix[6]arene, as an anion dopant, and organic solvents in enhancing the sensitivity and loading of glucose oxidase (GOx) on polypyrrole film in a biosensor: a comparative study.

    Science.gov (United States)

    Safarnavadeh, Vahideh; Zare, Karim; Fakhari, Ali Reza

    2013-11-15

    In this study, the effects of two solvents (acetonitrile and water) and an anion dopant (para sulfonato calix[6]arene ((C[6]S)(-6))), on the manufacturing and properties of a polypyrrole (Ppy)-based, glucose oxidase amperometric biosensor were studied. Pyrrole was polymerized using galvanostatic mode in two different solvents, and the effect of (C[6]S)(-6) was studied in aqueous solution. The morphology of the obtained polypyrrole films was studied by scanning electron microscopy (SEM). Glucose oxidase (GOx) was adsorbed on the Ppy films via cross-linking method. Then the amperometric responses of the Pt/Ppy/GOx electrodes were measured using the amperometric method at the potential of 0.7 V in steps of adding a glucose solution to a potassium phosphate buffer. We found that acetonitrile and (C[6]S)(-6) increase the sensitivity of the enzyme electrode up to 79.30 µA M(-1)cm(-2) in comparison with 31.60 μA M(-1)cm(-2) for the electrode synthesized in calixarene free aqueous solvent. Also (C[6]S)(-6) has the main role in preventing leaching the enzyme from the electrode. This fact increases loading of the enzyme and stability of the biosensor. So that the steady state current density of the aforementioned electrode increases linearly with increasing glucose concentration up to 190 mM. Whereas the linearity was observed up to 61 mM and 80 mM for the electrodes made using calixarene free acetonitrile and aqueous solutions, respectively. Copyright © 2013 Elsevier B.V. All rights reserved.

  19. Vacancy-Mediated Magnetism in Pure Copper Oxide Nanoparticles

    Science.gov (United States)

    2010-01-01

    Room temperature ferromagnetism (RTF) is observed in pure copper oxide (CuO) nanoparticles which were prepared by precipitation method with the post-annealing in air without any ferromagnetic dopant. X-ray photoelectron spectroscopy (XPS) result indicates that the mixture valence states of Cu1+ and Cu2+ ions exist at the surface of the particles. Vacuum annealing enhances the ferromagnetism (FM) of CuO nanoparticles, while oxygen atmosphere annealing reduces it. The origin of FM is suggested to the oxygen vacancies at the surface/or interface of the particles. Such a ferromagnet without the presence of any transition metal could be a very good option for a class of spintronics. PMID:20671775

  20. PREFACE: Semiconducting oxides Semiconducting oxides

    Science.gov (United States)

    Catlow, Richard; Walsh, Aron

    2011-08-01

    Semiconducting oxides are amongst the most widely studied and topical materials in contemporary condensed matter science, with interest being driven both by the fundamental challenges posed by their electronic and magnetic structures and properties, and by the wide range of applications, including those in catalysis and electronic devices. This special section aims to highlight recent developments in the physics of these materials, and to show the link between developing fundamental understanding and key application areas of oxide semiconductors. Several aspects of the physics of this wide and expanding range of materials are explored in this special section. Transparent semiconducting oxides have a growing role in several technologies, but challenges remain in understanding their electronic structure and the physics of charge carriers. A related problem concerns the nature of redox processes and the reactions which interconvert defects and charge carriers—a key issue which may limit the extent to which doping strategies may be used to alter electronic properties. The magnetic structures of the materials pose several challenges, while surface structures and properties are vital in controlling catalytic properties, including photochemical processes. The field profits from and exploits a wide range of contemporary physical techniques—both experimental and theoretical. Indeed, the interplay between experiment and computation is a key aspect of contemporary work. A number of articles describe applications of computational methods whose use, especially in modelling properties of defects in these materials, has a long and successful history. Several papers in this special section relate to work presented at a symposium within the European Materials Research Society (EMRS) meeting held in Warsaw in September 2010, and we are grateful to the EMRS for supporting this symposium. We would also like to thank the editorial staff of Journal of Physics: Condensed Matter for