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Sample records for underlying gaas substrate

  1. Gallium arsenide (GaAs) island growth under SiO(2) nanodisks patterned on GaAs substrates.

    Science.gov (United States)

    Tjahjana, Liliana; Wang, Benzhong; Tanoto, Hendrix; Chua, Soo-Jin; Yoon, Soon Fatt

    2010-05-14

    We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO(2) nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO(2) nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of approximately 50 x 50 microm(2) (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of 'catalytic' growth and facet formation.

  2. Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz F E; Mishurnyi V; Gorbatchev A; De Anda F [Universidad Autonoma de San Luis Potosi, Instituto de Investigacion en Comunicacion Optica, Av. Karacorum 1470, Col. Lomas 4a Sec., CP 78210San Luis PotosI (Mexico); Prutskij T, E-mail: fcoe_ov@prodigy.net.mx, E-mail: andre@cactus.iico.uaslp.mx [BUAP, Instituto de Ciencias, Apartado Postal 207, 72000, Puebla (Mexico)

    2011-01-01

    In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

  3. High Ms Fe16N2 thin film with Ag under layer on GaAs substrate

    Energy Technology Data Exchange (ETDEWEB)

    Allard Jr, Lawrence Frederick [ORNL

    2016-01-01

    (001) textured Fe16N2 thin film with Ag under layer is successfully grown on GaAs substrate using a facing target sputtering (FTS) system. After post annealing, chemically ordered Fe16N2 phase is formed and detected by X-ray diffraction (XRD). High saturation magnetization (Ms) is measured by a vibrating sample magnetometer (VSM). In comparison with Fe16N2 with Ag under layer on MgO substrate and Fe16N2 with Fe under layer on GaAs substrate, the current layer structure shows a higher Ms value, with a magnetically softer feature in contrast to the above cases. In addition, X-ray photoelectron spectroscopy (XPS) is performed to characterize the binding energy of N atoms. To verify the role of strain that the FeN layer experiences in the above three structures, Grazing Incidence X-ray Diffraction (GIXRD) is conducted to reveal a large in-plane lattice constant due to the in-plane biaxial tensile strain. INTRODUCTION

  4. GaAs Photovoltaics on Polycrystalline Ge Substrates

    Science.gov (United States)

    Wilt, David M.; Pal, AnnaMaria T.; McNatt, Jeremiah S.; Wolford, David S.; Landis, Geoffrey A.; Smith, Mark A.; Scheiman, David; Jenkins, Phillip P.; McElroy Bruce

    2007-01-01

    High efficiency III-V multijunction solar cells deposited on metal foil or even polymer substrates can provide tremendous advantages in mass and stowage, particularly for planetary missions. As a first step towards that goal, poly-crystalline p/i/n GaAs solar cells are under development on polycrystalline Ge substrates. Organo Metallic Vapor Phase Epitaxy (OMVPE) parameters for pre-growth bake, nucleation and deposition have been examined. Single junction p/i/n GaAs photovoltaic devices, incorporating InGaP front and back window layers, have been grown and processed. Device performance has shown a dependence upon the thickness of a GaAs buffer layer deposited between the Ge substrate and the active device structure. A thick (2 m) GaAs buffer provides for both increased average device performance as well as reduced sensitivity to variations in grain size and orientation. Illumination under IR light (lambda > 1 micron), the cells showed a Voc, demonstrating the presence of an unintended photoactive junction at the GaAs/Ge interface. The presence of this junction limited the efficiency to approx.13% (estimated with an anti-refection coating) due to the current mismatch and lack of tunnel junction interconnect.

  5. Highly efficient single-junction GaAs thin-film solar cell on flexible substrate

    Science.gov (United States)

    Moon, Sunghyun; Kim, Kangho; Kim, Youngjo; Heo, Junseok; Lee, Jaejin

    2016-07-01

    There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-off (ELO) method that uses a stress originating from a Cr/Au bilayer on a 125-μm-thick flexible substrate. A metal combination of AuBe/Pt/Au is employed as a new p-type ohmic contact with which an n-on-p single-junction GaAs thin-film solar cell on flexible substrate was successfully fabricated. The PCE of the fabricated single-junction GaAs thin-film solar cells reached 22.08% under air mass 1.5 global illumination.

  6. Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

    Science.gov (United States)

    Renteria, E. J.; Muniz, A. J.; Addamane, S. J.; Shima, D. M.; Hains, C. P.; Balakrishnan, G.

    2015-05-01

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2- μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high- resolution x-ray diffraction and atomic force microscopy.

  7. Synthesis of GaAs quantum dots on Si-layers on AlGaAs films grown on GaAs(100) substrates

    International Nuclear Information System (INIS)

    Mendez-Garcia, V. H.; Zamora-Peredo, L.; Saucedo-Zeni, N.

    2002-01-01

    In this work we report a novel method for obtaining GaAs quantum dots by molecular beam epitaxy (MBE) on an AlGaAs underlying film. We propose to use a Si monolayer (ML) grown on AlGaAs, in order to induce a 3D nucleation during the GaAs overgrowth. The samples were prepared in a Riber 32P MBE system employing undoped Si-GaAs(100) substrates. First, a 500 nm thick layer of Al x Ga 1-x As was grown with a nominal concentration x=0.35. Several samples were grown in order to analyze the effects of changing the Si interlayer thickness, and the amount of GaAs overgrowth, on the final structures. Previous to the Si-exposure, the AlGaAs presented a (1x3) surface reconstruction which gradually turned to a (3x1) structure when the Si-thickness was 1 ML, as observed in the reflection high-energy electron diffraction (RHEED) patterns. When the GaAs overgrowth started on this surface, transmission RHEED spots appeared and showed a considerable increase in intensity until reaching a maximum. This behavior is typical from a 3D island growth. If the GaAs overgrowth continues, the initial streaky RHEED patterns recovered indicating a 2D-growth. Thus, we prepared a sample stopping the GaAs overgrowth at the time when the diffraction 3D spot reached the maximum intensity, equivalent to 2ML of GaAs. The sample surface was analyzed in air by atomic force microscopy (AFM). Islands of 1.5 nm-height and 20x20 nm of base were clearly observed, these dimensions are suitable for applications in quantum dots. (Authors)

  8. Isolating GaSb membranes grown metamorphically on GaAs substrates using highly selective substrate removal etch processes

    Energy Technology Data Exchange (ETDEWEB)

    Lavrova, Olga [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials; Balakrishnan, Ganesh [Univ. of New Mexico, Albuquerque, NM (United States). Dept. of Electrical and Computer Engineering. Center for High Technology Materials

    2017-02-24

    The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11471 ± 1691 whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2 μm thick GaSb epi-layers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution X-Ray diffraction (HR-XRD) and atomic force microscopy (AFM).

  9. Molecular beam epitaxial growth and characterization of GaSb layers on GaAs (0 0 1) substrates

    International Nuclear Information System (INIS)

    Li Yanbo; Zhang Yang; Zhang Yuwei; Wang Baoqiang; Zhu Zhanping; Zeng Yiping

    2012-01-01

    We report on the growth of GaSb layers on GaAs (0 0 1) substrates by molecular beam epitaxy (MBE). We investigate the influence of the GaAs substrate surface treatment, growth temperature, and V/III flux ratios on the crystal quality and the surface morphology of GaSb epilayers. Comparing to Ga-rich GaAs surface preparation, the Sb-rich GaAs surface preparation can promote the growth of higher-quality GaSb material. It is found that the crystal quality, electrical properties, and surface morphology of the GaSb epilayers are highly dependent on the growth temperature, and Sb/Ga flux ratios. Under the optimized growth conditions, we demonstrate the epitaxial growth of high quality GaSb layers on GaAs substrates. The p-type nature of the unintentionally doped GaSb is studied and from the growth conditions dependence of the hole concentrations of the GaSb, we deduce that the main native acceptor in the GaSb is the Ga antisite (Ga Sb ) defect.

  10. Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

    Directory of Open Access Journals (Sweden)

    Frigeri C

    2010-01-01

    Full Text Available Abstract We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and the density from 107 to 109 cm−2. The islands show a standard deviation of base size distribution below 10% and their shape evolves changing the aspect ratio from 0.3 to 0.5 as size increases. Due to their characteristics, these islands are suitable to be used as local artificial substrates for the integration of III–V quantum nanostructures directly on silicon substrate.

  11. Reliability Analysis of III-V Solar Cells Grown on Recycled GaAs Substrates and an Electroplated Nickel Substrate

    Directory of Open Access Journals (Sweden)

    Ray-Hua Horng

    2013-01-01

    Full Text Available This study involved analyzing the reliability of two types of III-V solar cells: (1 III-V solar cells grown on new and recycled gallium arsenide (GaAs substrates and (2 the III-V solar cells transferred onto an electroplated nickel (Ni substrate as III-V thin-film solar cells by using a cross-shaped pattern epitaxial lift-off (CPELO process. The III-V solar cells were grown on new and recycled GaAs substrates to evaluate the reliability of the substrate. The recycled GaAs substrate was fabricated by using the CPELO process. The performance of the solar cells grown on the recycled GaAs substrate was affected by the uneven surface morphology of the recycled GaAs substrate, which caused the propagation of these dislocations into the subsequently grown active layer of the solar cell. The III-V solar cells were transferred onto an electroplated Ni substrate, which was also fabricated by using CPELO technology. The degradation of the III-V thin-film solar cell after conducting a thermal shock test could have been caused by microcracks or microvoids in the active layer or interface of the heterojunction, which resulted in the reduction of the external quantum efficiency response and the increase of recombination loss.

  12. Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

    DEFF Research Database (Denmark)

    Boulanger, J. P.; Chia, A. C. E.; Wood, B.

    2016-01-01

    A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet......-dependent properties to minimize passivation layer removal for electrical contacting is demonstrated. Thorough electrical characterization and analysis of the cell is reported. The electrostatic potential distribution across the radial p-i-n junction GaAs NW is investigated by off-axis electron holography....

  13. Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

    International Nuclear Information System (INIS)

    Muhammad, R.; Othaman, Z.; Ibrahim, Z.; Sakrani, S.; Wahab, Y.

    2016-01-01

    In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

  14. Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Muhammad, R., E-mail: rosnita@utm.my; Othaman, Z., E-mail: zulothaman@gmail.com; Ibrahim, Z., E-mail: zuhairi@utm.my; Sakrani, S., E-mail: samsudi3@yahoo.com [Faculty of Science, UniversitiTeknologi Malaysia, 81310 UTM, Johor (Malaysia); Wahab, Y., E-mail: wyussof@gmail.com [Razak School, UniversitiTeknologi Malaysia, 54100 Kuala Lumpur (Malaysia)

    2016-04-19

    In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

  15. Epitaxial growth on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Grym, Jan; Nohavica, Dušan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Piksová, K.

    2013-01-01

    Roč. 16, č. 1 (2013), s. 59-64 ISSN 1631-0748 R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253 Institutional support: RVO:67985882 ; RVO:68378271 Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D) Impact factor: 1.483, year: 2013

  16. Self-assembled colloidal PbS quantum dots on GaAs substrates

    International Nuclear Information System (INIS)

    Lue, Wei; Yamada, Fumihiko; Kamiya, Itaru

    2010-01-01

    We report the fabrication and analysis of self-assembled monolayer and bilayer films of colloidal PbS quantum dots (QDs) on GaAs (001) substrates. 1,6-hexanedithiol is used as link molecule between QDs and GaAs substrates. Atomic force microscopy (AFM) and photoluminescence (PL) measurements confirm the formation of PbS QD film on GaAs. For the monolayer PbS QD film, the temperature-dependent PL shows a feature typical of close-packed film. For the bilayer PbS QD film fabricated from two different mean-sized PbS QDs, we find that the stacking sequence of QDs with different size affects the quantum yield and emission wavelength of the film.

  17. Etching of GaAs substrates to create As-rich surface

    Indian Academy of Sciences (India)

    WINTEC

    ionized water. Another sample was prepared by treating. GaAs wafer in HCl solution for 10 min. The last sample was treated with HCl solution (1 : 1) for 10 min, then in deionized water for 10 s. After treating with different solutions, these substrates were dried in a stream of dry nitrogen. XPS analysis was carried out in a VG ...

  18. 46 CFR Sec. 7 - Operation under current GAA/MSTS Southeast Asia Program.

    Science.gov (United States)

    2010-10-01

    ... 46 Shipping 8 2010-10-01 2010-10-01 false Operation under current GAA/MSTS Southeast Asia Program... AUTHORITY VOYAGE DATA Sec. 7 Operation under current GAA/MSTS Southeast Asia Program. In order to adapt the provisions of NSA Order 35 (OPR-2) to the particular circumstances of the present GAA/MSTS Southeast Asia...

  19. Anisotropy of mosaic structure of GaAsP layers grown on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Saka, T. [Daido Institute of Technology, 10-3, Takiharu-cho, Minami-ku, Nagoya 457-8530 (Japan); Kato, T. [Daido Steel Co. Ltd., 2-30, Daido-cho, Minami-ku, Nagoya 457-8545 (Japan); Jin, X.G.; Tanioku, M.; Ujihara, T.; Takeda, Y. [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Yamamoto, N.; Nakagawa, Y.; Mano, A.; Okumi, S.; Yamamoto, M.; Nakanishi, T. [Graduate School of Science, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8602 (Japan); Horinaka, H.; Matsuyama, T. [Faculty of Engineering, Osaka Prefecture University, 1-1, Gakuen-cho, Sakai 599-8531 (Japan); Yasue, T.; Koshikawa, T. [Fundamental Electronics Research Institute, Osaka Electro-Communication University, 18-8, Hatsu-cho, Neyagawa 572-8530 (Japan)

    2009-08-15

    The crystalline structure of GaAsP layers grown on GaAs and GaP(001) substrates, used for spin polarized photocathodes, has been investigated by X-ray diffraction. The layers on the GaAs substrate possess a mosaic structure observable by X-ray topography and consist of many large blocks. The mosaicity is anisotropic and the distribution of the mosaic is restricted within the (110) plane, and the blocks zigzag around the [110] direction. The layer grown on the GaP substrate was uniform and no mosaic was observed in the topographs. The results indicate that different mechanisms of strain release occur in GaAsP layers for tensile and compressive strains. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  20. Defect analyses of selective epitaxial grown GaAs on STI patterned (0 0 1) Si substrates

    Science.gov (United States)

    Kim, S. W.; Cho, Y. D.; Shin, C. S.; Park, W. K.; Kim, D. H.; Ko, D. H.

    2014-09-01

    The defects of GaAs layers grown on Si (001) substrate with patterned SiO2 structures were investigated using transmission electron microscopy. The compressive strain along the direction was induced in selectively grown GaAs epilayers.The defects such as stacking faults or microtwins were trapped near the GaAs/Si interface, over which defect free GaAs regions were formed from the middle of trench walls. It is suggested that the residual compressive strain in defect free GaAs layers is due to the patterned SiO2 structures.

  1. Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy

    Science.gov (United States)

    Huang, D.; Agarwala, S.; Morkoc, H.

    1989-01-01

    GaAs-based field-effect transistor structures have been grown on InP substrates with the InGaAs/GaAs strained-layer superlattices and 1.5 micron GaAs layer as the buffer. The low-temperature (4 K) photoluminescence (PL) from this GaAs buffer has been studied for the first time. Among five observable peaks, the excitonic transition at energy 1.513 eV and the impurity associated recombination at energy 1.483 eV have been identified with the aid of reflection, absorption, and temperature and excitation-intensity dependent PL measurements. The peak at 1.504 eV, most probably due to an exciton bound to a defect, is greatly enhanced compared with that of homoepitaxially grown GaAs. The optical results show that GaAs films of good quality can be grown on InP substrate, which is consistent with device results.

  2. Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

    International Nuclear Information System (INIS)

    Zhi-Qiang, Zhou; Ying-Qiang, Xu; Rui-Ting, Hao; Bao, Tang; Zheng-Wei, Ren; Zhi-Chuan, Niu

    2009-01-01

    We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of AlSb layers are found to be 450° C and 2.1 nm, respectively. A rms surface roughness of 0.67nm over 10 × 10 μm 2 is achieved as a 0.5μm GaSb film is grown under optimized conditions

  3. Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates

    International Nuclear Information System (INIS)

    Cruz Hernandez, Esteban; Rojas Ramirez, Juan-Salvador; Contreras Hernandez, Rocio; Lopez Lopez, Maximo; Pulzara Mora, Alvaro; Mendez Garcia, Victor H.

    2007-01-01

    In this work, we report the study of the homoepitaxial growth of GaAs on (631) oriented substrates by molecular beam epitaxy (MBE). We observed the spontaneous formation of a high density of large scale features on the surface. The hilly like features are elongated towards the [-5, 9, 3] direction. We show the dependence of these structures with the growth conditions and we present the possibility of to create quantum wires structures on this surface

  4. Direct Growth of High-Quality InP Layers on GaAs Substrates by MOCVD

    Directory of Open Access Journals (Sweden)

    K. F. Yarn

    2003-01-01

    group V partial pressure, growth rate and V/III ratios. A mirror-like, uniform surface and high crystal quality of the metamorphic buffer layer directly grown on a GaAs substrate can be achieved. Finally, to investigate the performance of the metamorphic microwave devices, we also fabricate the InAlAs/InGaAs metamorphic HEMT on GaAs substrates.

  5. P-type Ge epitaxy on GaAs (100) substrate grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Y.J.; Chia, C.K.; Liu, H.F.; Wong, L.M.; Chai, J.W.; Chi, D.Z.; Wang, S.J., E-mail: sj-wang@imre.a-star.edu.sg

    2016-07-15

    Highlights: • The heterogeneous integration of p-Ge/GaAs by MOCVD indicates significance for the application in optoelectronic devices such as p-MOSFET, dual band photodetector, etc. • Many undesired pillar-structures were observed on the p-Ge epilayers and we found that the cause of the pillar-like structures was related to the Ge-Ga dimers formed during the growth. • We found that a GaAs substrate with fewer Ga or Ge danglings was helpful in suppressing the formation of the unwanted pillar-like structures and thus obtaining high quality p-Ge epilayers. - Abstract: In this work, Ga-doped Geranium (Ge) films have been grown on GaAs (100) substrates by metal-organic chemical vapor deposition (MOCVD). Undesired pillar structures have been observed on the epilayers prepared at relatively lower temperatures. Energy dispersive X-ray spectroscopy (EDX) indicated that the pillars are mainly consisted of Ga atoms, which is totally different from that of the Ge film. It was demonstrated that the pillar structures could be reduced by simply raising the growth temperature while keeping the other growth conditions unchanged. In this regard, the growth mechanism of the pillars was related to the Ge-Ga dimers formed during the growth of p-Ge films. By further studying the influence of a GaAs or Ge buffer layer on the growth of p-Ge layers, we found that the GaAs substrate with lower density of Ga or Ge dangling bonds was helpful in suppressing the formation of the undesired pillar structures.

  6. Influence of GaAs Substrate Orientation on InAs Quantum Dots: Surface Morphology, Critical Thickness, and Optical Properties

    Directory of Open Access Journals (Sweden)

    Liang BL

    2007-01-01

    Full Text Available AbstractInAs/GaAs heterostructures have been simultaneously grown by molecular beam epitaxy on GaAs (100, GaAs (100 with a 2° misorientation angle towards [01−1], and GaAs (n11B (n = 9, 7, 5 substrates. While the substrate misorientation angle increased from 0° to 15.8°, a clear evolution from quantum dots to quantum well was evident by the surface morphology, the photoluminescence, and the time-resolved photoluminescence, respectively. This evolution revealed an increased critical thickness and a delayed formation of InAs quantum dots as the surface orientation departed from GaAs (100, which was explained by the thermal-equilibrium model due to the less efficient of strain relaxation on misoriented substrate surfaces.

  7. The Morphology and Microstructure of Thin-Film GaAs on Mo Substrates

    International Nuclear Information System (INIS)

    Jones, K. M.; Al-Jassim, M. M.; Hasoon, F. S.; Venkatasubramanian, R.

    1999-01-01

    The growth of GaAs thin films on Molybdenum foils was investigated in an attempt to find a low-cost substrate for GaAs. The films were grown by metalorganic chemical vapor deposition (MOCVD). The film thickness was in the 2-4(micro)m range, while the deposition temperature was in the 650-825 C range. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the film morphology and microstructure, respectively. The film morphology in general, and the grain size in particular, were found to be strongly dependent on the growth temperature. However, the defect structure observed in these films was relatively insensitive to the growth conditions

  8. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  9. Application of genetic algorithm for strain profile reconstruction in ion implanted GaAs substrates

    International Nuclear Information System (INIS)

    Shcherbachev, K.D.; Bublik, V.T.; Kuripyatnik, A.V.

    2001-01-01

    The optimization procedure of strain profile reconstruction for X-ray diffraction pattern based on a genetic algorithm is considered taking as an example of GaAs substrate doped by Se + ions with the dose of 1x10 14 cm 2 and the energy of 150 keV. It is shown that a significance of χ 2 criterion depends on accuracy of measurements especially for small intensities. To get the detailed information about strain profile the measurements must be done using a triple crystal arrangement that allows one to separate smooth incoherent component of X-ray scattering from coherent one [ru

  10. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, P. [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Bag, A.; Jana, S. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Chakraborty, A. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India); Das, S.; Mahata, M. Kr. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, D. [Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-01-01

    Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate.

  11. Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness

    International Nuclear Information System (INIS)

    Kumar, Rahul; Mukhopadhyay, P.; Bag, A.; Jana, S. Kr.; Chakraborty, A.; Das, S.; Mahata, M. Kr.; Biswas, D.

    2015-01-01

    Highlights: • In(Al,Ga)As metamorphic buffers on GaAs have been grown. • Surface morphology, strain relaxation and compositional variation have been studied. • Al containing buffers shows inferior surface roughness. • Surface roughness modulates the indium incorporation rate. - Abstract: In this work, compositionally graded In(Al,Ga)As metamorphic buffers (MBs) on GaAs substrate have been grown by MBE through three different paths. A comparative study has been done to comprehend the effect of underlying MB on the constant composition InAlAs healing layer by analyzing the relaxation behaviour, composition and surface morphology of the grown structures. The compositional variation between the constant composition healing layers on top of graded MB has been observed in all three samples although the growth conditions have been kept same. Indium incorporation rate has been found to be dependent on underlying MB. By combining the result of atomic force microscopy, photo-luminescence and X-ray reciprocal space mapping, varying surface roughness has been proposed as the probable driving force behind different Indium incorporation rate

  12. A comparative study of Co thin film deposited on GaAs (1 0 0) and glass substrates

    International Nuclear Information System (INIS)

    Sharma, A.; Brajpuriya, R.; Tripathi, S.; Jain, D.; Dubey, R.; Shripathi, T.; Chaudhari, S.M.

    2006-01-01

    The structural, magnetic and transport properties of Co/GaAs (1 0 0) and Co/glass thin films have been investigated. The structural measurements reveal the crystalline nature of Co thin film grown on GaAs, while microcrystalline nature in case of glass substrate. The film grown on GaAs shows higher coercivity (49.0 G), lower saturation magnetization (3.65 x 10 -4 ) and resistivity (8 μΩ cm) values as compared to that on glass substrate (22 G, 4.77 x 10 -4 and 18 μΩ cm). The grazing incidence X-ray reflectivity and photoemission spectroscopy results show the interaction between Co and GaAs at the interface, while the Co layer grown on glass remains unaffected. These observed results are discussed and interpreted in terms of different growth morphologies and structures of as grown Co thin film on both substrates

  13. Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

    International Nuclear Information System (INIS)

    Skiba-Szymanska, Joanna; Ward, Martin B; Ellis, David J P; Shields, Andrew J; Jamil, Ayesha; Farrer, Ian; Nicoll, Christine A; Griffiths, Jonathan P; Anderson, David; Jones, Geb A C; Ritchie, David A

    2011-01-01

    We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 μeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.

  14. Multilayers of GaAs/Mn deposited on a substrate of GaAs (001)

    Energy Technology Data Exchange (ETDEWEB)

    Bernal-Salamanca, M; Pulzara-Mora, A; Rosales-Rivera, A [Laboratorio de Magnetismo y Materiales Avanzados, Universidad Nacional de Colombia, Sede Manizales, A.A. 127 (Colombia); Molina-Valdovinos, S; Melendez-Lira, M [Physics Department, Centro de Investigacion y Estudios Avanzados del IPN, Av. IPN No. 2508, Apartado Postal 14-740, 07000 Mexico D.F (Mexico); Lopez-Lopez, M, E-mail: aopulzaram@unal.edu.c [Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Apartado Postal 1-1010, Queretaro 76000 (Mexico)

    2009-05-01

    In this work GaAs/Mn multilayers were deposited on GaAs (001) substrates by R.F magnetron sputtering technique, varying the deposition time (tg). Scanning electron and atomic force Microscopy studies were realized on the surface of the samples in order to determine the morphology and average roughness. X-ray diffraction spectra show that our samples tend to do amorphous. Raman spectroscopy at room temperature was employed to analyze the structural properties of the samples. We found that for a GaAs film taken as reference, the Raman spectra is dominated by the transverse (TO) and longitudinal (LO) modes located at 266 cm{sup -1} and 291 cm{sup -1}, respectively. However, for the GaAs/Mn multilayers the TO and LO modes decrease dramatically, and the Mn Raman modes in the range of 100 cm{sup -1} and 250 cm{sup -1} are evidenced. Additional new peaks located around 650 and 690 cm {sup -1} are only observed for the samples with high Mn content. By using the mass reduced model we estimate that the Mn related peaks are located at 650.2 cm{sup -1} and 695.2 cm{sup -1}, in good agreement with the experimental data, these peaks are correlated with excitations due to (Mn){sub m}As{sub n} localized structures.

  15. Structural characterization of ZnTe grown by atomic-layer-deposition regime on GaAs and GaSb (100) oriented substrates

    Energy Technology Data Exchange (ETDEWEB)

    Castillo-Ojeda, Roberto Saúl [Universidad Politécnica de Pachuca (Mexico); Díaz-Reyes, Joel; Peralta-Clara, María de la Cruz; Veloz-Rendón, Julieta Salomé, E-mail: joel_diaz_reyes@hotmail.com [Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Tlaxcala, (Mexico); Galván-Arellano, Miguel [Centro de Investigación y de Estudios Avanzados, Instituto Politécnico Nacional (Mexico); Anda-Salazar, Francisco de [Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí (Mexico); Contreras-Rascon, Jorge Indalecio [Departamento de Física, Universidad de Sonora (Mexico)

    2017-10-15

    This work presents the characterization of ZnTe nano layers grown on GaAs and GaSb (100) substrates by the Atomic Layer Deposition (ALD) regime. Under certain conditions, the alternating exposition of a substrate surface to the element vapours makes possible the growth of atomic layers in a reactor where the atmosphere is high-purity hydrogen. ZnTe was grown simultaneously on GaAs and GaSb at the same run, allowing, a comparison between the effects produced by the superficial processes due to the different used substrates, thereby eliminating possible unintended changes of growth parameters. Nano layers on GaSb maintained their shiny appearance even at temperatures near 420°C. It was found that for exposure times below 2.5 s there was not growth on GaAs, while for GaSb the shortest time was 1.5 s at 385°C. By HRXRD the peak corresponding to (004) diffraction plane of ZnTe was identified and investigated, the FWHM resulted very wide (600-800 arcsec) indicating a highly distorted lattice mainly due to mosaicity. Raman scattering shows the peak corresponding to LO-ZnTe, which is weak and slightly shifted in comparison with the reported for the bulk ZnTe at 210 cm{sup -1}. Additionally, the measurements suggest that the crystalline quality have a dependence with the growth temperature. (author)

  16. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    NARCIS (Netherlands)

    Alonso-González, Pablo; González, Luisa; González, Yolanda; Fuster, David; Fernández-Martinez, Ivan; Martin-Sánchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs

  17. GaAs quantum dot solar cell under concentrated radiation

    International Nuclear Information System (INIS)

    Sablon, K.; Little, J. W.; Hier, H.; Li, Y.; Mitin, V.; Vagidov, N.; Sergeev, A.

    2015-01-01

    Effects of concentrated solar radiation on photovoltaic performance are investigated in well-developed GaAs quantum dot (QD) solar cells with 1-Sun efficiencies of 18%–19%. In these devices, the conversion processes are enhanced by nanoscale potential barriers and/or AlGaAs atomically thin barriers around QDs, which prevent photoelectron capture to QDs. Under concentrated radiation, the short circuit current increases proportionally to the concentration and the open circuit voltage shows the logarithmic increase. In the range up to hundred Suns, the contributions of QDs to the photocurrent are proportional to the light concentration. The ideality factors of 1.1–1.3 found from the V OC -Sun characteristics demonstrate effective suppression of recombination processes in barrier-separated QDs. The conversion efficiency shows the wide maximum in the range of 40–90 Suns and reaches 21.6%. Detailed analysis of I-V-Sun characteristics shows that at low intensities, the series resistance decreases inversely proportional to the concentration and, at ∼40 Suns, reaches the plateau determined mainly by the front contact resistance. Improvement of contact resistance would increase efficiency to above 24% at thousand Suns

  18. Co thin film with metastable bcc structure formed on GaAs(111 substrate

    Directory of Open Access Journals (Sweden)

    Minakawa Shigeyuki

    2014-07-01

    Full Text Available Co thin films are prepared on GaAs(111 substrates at temperatures ranging from room temperature to 600 ºC by radio-frequency magnetron sputtering. The growth behavior and the detailed resulting film structure are investigated by in-situ reflection high-energy electron diffraction and X-ray diffraction. In early stages of film growth at temperatures lower than 200 ºC, Co crystals with metastable A2 (bcc structure are formed, where the crystal structure is stabilized through hetero-epitaxial growth. With increasing the film thickness beyond 2 nm, the metastable structure starts to transform into more stable A1 (fcc structure through atomic displacements parallel to the A2{110} close-packed planes. The crystallographic orientation relationship between the A2 and the transformed A1 crystals is A1{111} || A2{110}. When the substrate temperature is higher than 400 ºC, Ga atoms of substrate diffuse into the Co films and a Co-Ga alloy with bcc-based ordered structure of B2 is formed.

  19. Lithography-free shell-substrate isolation for core-shell GaAs nanowires.

    Science.gov (United States)

    Haggren, Tuomas; Perros, Alexander Pyymaki; Jiang, Hua; Huhtio, Teppo; Kakko, Joona-Pekko; Dhaka, Veer; Kauppinen, Esko; Lipsanen, Harri

    2016-07-08

    A facile and scalable lithography-free technique(5) for the rapid construction of GaAs core-shell nanowires incorporating shell isolation from the substrate is reported. The process is based on interrupting NW growth and applying a thin spin-on-glass (SOG) layer to the base of the NWs and resuming core-shell NW growth. NW growth occurred in an atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) system with gold nanoparticles used as catalysts for the vapour-liquid-solid growth. It is shown that NW axial core growth and radial shell growth can be resumed after interruption and even exposure to air. The SOG residues and native oxide layer that forms on the NW surface are shown to prevent or perturb resumption of epitaxial NW growth if not removed. Both HF etching and in situ annealing of the air-exposed NWs in the MOVPE were shown to remove the SOG residues and native oxide layer. While both procedures are shown capable of removing the native oxide and enabling resumption of epitaxial NW growth, in situ annealing produced the best results and allowed construction of pristine core-shell NWs. No growth occurred on SOG and it was observed that axial NW growth was more rapid when a SOG layer covered the substrate. The fabricated p-core/n-shell NWs exhibited diode behaviour upon electrical testing. The isolation of the NW shells from the substrate was confirmed by scanning electron microscopy and electrical measurements. The crystal quality of the regrown core-shell NWs was verified with a high resolution transmission electron microscope. The reported technique potentially provides a pathway using MOVPE for scalable and high-throughput production of shell-substrate isolated core-shell NWs on an industrial scale.

  20. Croissance epitaxiale de GaAs sur substrats de Ge par epitaxie par faisceaux chimiques

    Science.gov (United States)

    Belanger, Simon

    La situation energetique et les enjeux environnementaux auxquels la societe est confrontee entrainent un interet grandissant pour la production d'electricite a partir de l'energie solaire. Parmi les technologies actuellement disponibles, la filiere du photovoltaique a concentrateur solaire (CPV pour concentrator photovoltaics) possede un rendement superieur et mi potentiel interessant a condition que ses couts de production soient competitifs. La methode d'epitaxie par faisceaux chimiques (CBE pour chemical beam epitaxy) possede plusieurs caracteristiques qui la rendent interessante pour la production a grande echelle de cellules photovoltaiques a jonctions multiples a base de semi-conducteurs III-V. Ce type de cellule possede la meilleure efficacite atteinte a ce jour et est utilise sur les satellites et les systemes photovoltaiques a concentrateur solaire (CPV) les plus efficaces. Une des principales forces de la technique CBE se trouve dans son potentiel d'efficacite d'utilisation des materiaux source qui est superieur a celui de la technique d'epitaxie qui est couramment utilisee pour la production a grande echelle de ces cellules. Ce memoire de maitrise presente les travaux effectues dans le but d'evaluer le potentiel de la technique CBE pour realiser la croissance de couches de GaAs sur des substrats de Ge. Cette croissance constitue la premiere etape de fabrication de nombreux modeles de cellules solaires a haute performance decrites plus haut. La realisation de ce projet a necessite le developpement d'un procede de preparation de surface pour les substrats de germanium, la realisation de nombreuses sceances de croissance epitaxiale et la caracterisation des materiaux obtenus par microscopie optique, microscopie a force atomique (AFM), diffraction des rayons-X a haute resolution (HRXRD), microscopie electronique a transmission (TEM), photoluminescence a basse temperature (LTPL) et spectrometrie de masse des ions secondaires (SIMS). Les experiences ont permis

  1. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    International Nuclear Information System (INIS)

    Alonso-Gonzalez, Pablo; Gonzalez, Luisa; Gonzalez, Yolanda; Fuster, David; Fernandez-Martinez, Ivan; Martin-Sanchez, Javier; Abelmann, Leon

    2007-01-01

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates

  2. New process for high optical quality InAs quantum dots grown on patterned GaAs(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Alonso-Gonzalez, Pablo [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Gonzalez, Luisa [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Gonzalez, Yolanda [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Fuster, David [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Fernandez-Martinez, Ivan [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Martin-Sanchez, Javier [Instituto de Microelectronica de Madrid (CNM, CSIC), Isaac Newton 8, 28760, Tres Cantos, Madrid (Spain); Abelmann, Leon [SMI, MESA Institute of Nanotechnology, University of Twente, PO Box 217, 7500 AE, Enschede (Netherlands)

    2007-09-05

    This work presents a selective ultraviolet (UV)-ozone oxidation-chemical etching process that has been used, in combination with laser interference lithography (LIL), for the preparation of GaAs patterned substrates. Further molecular beam epitaxy (MBE) growth of InAs results in ordered InAs/GaAs quantum dot (QD) arrays with high optical quality from the first layer of QDs formed on the patterned substrate. The main result is the development of a patterning technology that allows the engineering of customized geometrical displays of QDs with the same optical quality as those formed spontaneously on flat non-patterned substrates.

  3. Diagnostics of deep centers on the border of film–substrate in thin-film all-epitaxial structures of GaAs

    Directory of Open Access Journals (Sweden)

    Gorev N. B.

    2010-08-01

    Full Text Available A simple method for the determination of the concentration of vacant deep traps in the vicinity of the «film — substrate» interface is proposed. The method is based on determining the increase in the width of the conducting channel under extrinsic illumination from the shift of the inflection point in the capacitance-voltage curve. The reliability of the method is confirmed by measurement of the concentration of vacant deep traps in GaAs wafers with and without a buffer layer.

  4. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Dutta, P.; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V.; Zheng, N.; Ahrenkiel, P.; Martinez, J.

    2014-01-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10 7  cm −2 . Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm 2 /V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  5. Influence of substrate on the performances of semi-insulating GaAs detectors

    CERN Document Server

    Baldini, R; Nava, F; Canali, C; Lanzieri, C

    2000-01-01

    A study of the carrier transport mechanism, the charge collection efficiency and the energy resolution has been carried out on semi-insulating GaAs X-ray detectors realised on substrates with concentrations of acceptor dopants N sub a , varying from 10 sup 1 sup 4 to 10 sup 1 sup 7 cm sup - sup 3. The electron collection efficiency (ECE) and the reverse current were found to decrease with increasing N sub a , while the resistivity of the material was found to increase. At room temperature, the best collection efficiency (95%) and the best energy resolution (13.7 keV FWHM) for 59.5 keV X-rays of the sup 2 sup 4 sup 1 Am source, have been achieved with the less doped detectors (N sub a approx 10 sup 1 sup 4 cm sup - sup 3). The concentrations of ionised EL2 sup + , determined by optical measurements in IR regions, was shown to increase with N sub a and to be quasi-inversely proportional to the ECE values. This behaviour strongly supports the hypothesis that the EL2 defects play a main role in the compensation o...

  6. Preparation of metastable bcc permalloy epitaxial thin films on GaAs(011)B3 single-crystal substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Higuchi, Jumpei; Yabuhara, Osamu; Kirino, Fumiyoshi; Futamoto, Masaaki

    2011-01-01

    Permalloy (Py) single-crystal films with bcc structure were obtained on GaAs(011) B3 single-crystal substrates by ultra high vacuum rf magnetron sputtering. The film growth and the detailed film structures were investigated by refection high energy electron diffraction and pole figure X-ray diffraction. bcc-Py films epitaxially grow on the substrates in the orientation relationship of Py(011)[011-bar] bcc || GaAs(011)[011-bar] B3 . The lattice constant of bcc-Py film is determined to be a = 0.291 nm. With increasing the film thickness, parts of the bcc crystal transform into more stable fcc structure by atomic displacement parallel to the bcc{011} close-packed planes. The resulting film thus consists of a mixture of bcc and fcc crystals. The phase transformation mechanism is discussed based on the experimental results. The in-plane magnetization properties reflecting the magnetocrystalline anisotropy of bcc-Py crystal are observed for the Py films grown on GaAs(011) B3 substrates.

  7. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yum, J.H., E-mail: redeyes78@mail.utexas.edu [Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, 10100 Burnet Road, Austin, Texas 78758 (United States); SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States); Akyol, T. [Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, 10100 Burnet Road, Austin, Texas 78758 (United States); Lei, M. [Department of Physics, UT Austin, 1 University Station C1600, Austin, Texas 78712 (United States); Ferrer, D.A. [Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, 10100 Burnet Road, Austin, Texas 78758 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, 601 University Drive, San Marcos, Texas 78666 (United States); Downer, M. [Department of Physics, UT Austin, 1 University Station C1600, Austin, Texas 78712 (United States); Bielawski, C.W. [Department of Chemistry, UT Austin, 1 University Station, A5300, Austin, Texas 78712 (United States); Bersuker, G. [SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States); Lee, J.C.; Banerjee, S.K. [Microelectronics Research Center, Department of Electrical and Computer Engineering, University of Texas, 10100 Burnet Road, Austin, Texas 78758 (United States)

    2012-01-31

    In a previous study, atomic layer deposited (ALD) BeO exhibited less interface defect density and hysteresis, as well as less frequency dispersion and leakage current density, at the same equivalent oxide thickness than Al{sub 2}O{sub 3}. Furthermore, its self-cleaning effect was better. In this study, the physical and electrical characteristics of ALD BeO grown on Si and GaAs substrates are further evaluated as a gate dielectric layer in III-V metal-oxide-semiconductor devices using transmission electron microscopy, selective area electron diffraction, second harmonic generation, and electrical analysis. An as-grown ALD BeO thin film was revealed as a layered single crystal structure, unlike the well-known ALD dielectrics that exhibit either poly-crystalline or amorphous structures. Low defect density in highly ordered ALD BeO film, less variability in electrical characteristics, and great stability under electrical stress were demonstrated. - Highlights: Black-Right-Pointing-Pointer BeO is an excellent electrical insulator, but good thermal conductor. Black-Right-Pointing-Pointer Highly crystalline film of BeO has been grown using atomic layer deposition. Black-Right-Pointing-Pointer An ALD BeO precursor, which is not commercially available, has been synthesized. Black-Right-Pointing-Pointer Physical and electrical characteristics have been investigated.

  8. Electrical and physical characteristics for crystalline atomic layer deposited beryllium oxide thin film on Si and GaAs substrates

    International Nuclear Information System (INIS)

    Yum, J.H.; Akyol, T.; Lei, M.; Ferrer, D.A.; Hudnall, Todd W.; Downer, M.; Bielawski, C.W.; Bersuker, G.; Lee, J.C.; Banerjee, S.K.

    2012-01-01

    In a previous study, atomic layer deposited (ALD) BeO exhibited less interface defect density and hysteresis, as well as less frequency dispersion and leakage current density, at the same equivalent oxide thickness than Al 2 O 3 . Furthermore, its self-cleaning effect was better. In this study, the physical and electrical characteristics of ALD BeO grown on Si and GaAs substrates are further evaluated as a gate dielectric layer in III–V metal-oxide-semiconductor devices using transmission electron microscopy, selective area electron diffraction, second harmonic generation, and electrical analysis. An as-grown ALD BeO thin film was revealed as a layered single crystal structure, unlike the well-known ALD dielectrics that exhibit either poly-crystalline or amorphous structures. Low defect density in highly ordered ALD BeO film, less variability in electrical characteristics, and great stability under electrical stress were demonstrated. - Highlights: ► BeO is an excellent electrical insulator, but good thermal conductor. ► Highly crystalline film of BeO has been grown using atomic layer deposition. ► An ALD BeO precursor, which is not commercially available, has been synthesized. ► Physical and electrical characteristics have been investigated.

  9. Terahertz-radiation generation and detection in low-temperature-grown GaAs epitaxial films on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Buriakov, A. M.; Bilyk, V. R.; Mishina, E. D. [Moscow Technological University “MIREA” (Russian Federation); Klimov, E. A. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation); Vasil’evskii, I. S. [National Research Nuclear University “MEPhI” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)

    2017-04-15

    The efficiency of the generation and detection of terahertz radiation in the range up to 3 THz by LT-GaAs films containing equidistant Si doping δ layers and grown by molecular beam epitaxy on GaAs (100) and (111)Ga substrates is studied by terahertz spectroscopy. Microstrip photoconductive antennas are fabricated on the film surface. Terahertz radiation is generated by exposure of the antenna gap to femtosecond optical laser pulses. It is shown that the intensity of terahertz radiation from the photoconductive antenna on LT-GaAs/GaAs (111)Ga is twice as large as the intensity of a similar antenna on LT-GaAs/GaAs(100) and the sensitivity of the antenna on LT-GaAs/GaAs (111)Ga as a terahertz-radiation detector exceeds that of the antenna on LT-GaAs/GaAs(100) by a factor of 1.4.

  10. Enhancement of conductance of GaAs sub-microwires under external stimuli

    Science.gov (United States)

    Qu, Xianlin; Deng, Qingsong; Zheng, Kun

    2018-03-01

    Semiconductors with one dimension on the micro-nanometer scale have many unique physical properties that are remarkably different from those of their bulk counterparts. Moreover, changes in the external field will further modulate the properties of the semiconductor micro-nanomaterials. In this study, we used focused ion beam technology to prepare freestanding ⟨111⟩-oriented GaAs sub-microwires from a GaAs substrate. The effects of laser irradiation and bending or buckling deformation induced by compression on the electrical transport properties of an individual GaAs sub-microwire were studied. The experimental results indicate that both laser irradiation and bending deformation can enhance their electrical transport properties, the laser irradiation resulted in a conductance enhancement of ˜30% compared to the result with no irradiation, and in addition, bending deformation changed the conductance by as much as ˜180% when the average strain was approximately 1%. The corresponding mechanisms are also discussed. This study provides beneficial insight into the fabrication of electronic and optoelectronic devices based on GaAs micro/nano-wires.

  11. Single-Crystalline Aluminum Nanostructures on a Semiconducting GaAs Substrate for Ultraviolet to Near-Infrared Plasmonics.

    Science.gov (United States)

    Liu, Hsuan-Wei; Lin, Fan-Cheng; Lin, Shi-Wei; Wu, Jau-Yang; Chou, Bo-Tsun; Lai, Kuang-Jen; Lin, Sheng-Di; Huang, Jer-Shing

    2015-04-28

    Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and is superior to noble metals in natural abundance, cost, and compatibility with modern semiconductor fabrication processes. Ultrasmooth single-crystalline metallic films are beneficial for the fabrication of high-definition plasmonic nanostructures, especially complex integrated nanocircuits. The absence of surface corrugation and crystal boundaries also guarantees superior optical properties and applications in nanolasers. Here, we present UV to near-infrared plasmonic resonance of single-crystalline aluminum nanoslits and nanoholes. The high-definition nanostructures are fabricated with focused ion-beam milling into an ultrasmooth single-crystalline aluminum film grown on a semiconducting GaAs substrate with a molecular beam epitaxy method. The single-crystalline aluminum film shows improved reflectivity and reduced two-photon photoluminescence (TPPL) due to the ultrasmooth surface. Both linear scattering and nonlinear TPPL are studied in detail. The nanoslit arrays show clear Fano-like resonance, and the nanoholes are found to support both photonic modes and localized surface plasmon resonance. We also found that TPPL generation is more efficient when the excitation polarization is parallel rather than perpendicular to the edge of the aluminum film. Such a counterintuitive phenomenon is attributed to the high refractive index of the GaAs substrate. We show that the polarization of TPPL from aluminum preserves the excitation polarization and is independent of the crystal orientation of the film or substrate. Our study gains insight into the optical property of aluminum nanostructures on a high-index semiconducting GaAs substrate and illustrates a practical route to implement plasmonic devices onto semiconductors for future hybrid nanodevices.

  12. Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Yablonsky, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Morozov, S. V.; Gaponova, D. M.; Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Shengurov, V. G.; Zvonkov, B. N.; Vikhrova, O. V.; Baidus’, N. V. [Lobachevsky State University of Nizhny Novgorod (Russian Federation); Krasil’nik, Z. F. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2016-11-15

    We report the observation of stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on Si(001) substrates with the application of a relaxed Ge buffer layer. Stimulated emission is observed at 77 K under pulsed optical pumping at a wavelength of 1.11 μm, i.e., in the transparency range of bulk silicon. In similar InGaAs/GaAsSb/GaAs structures grown on GaAs substrates, room-temperature stimulated emission is observed at 1.17 μm. The results obtained are promising for integration of the structures into silicon-based optoelectronics.

  13. Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Wang, Hsiao-Hua; Ke, Han-Xiang; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Shen, Ji-Lin

    2013-01-01

    This work demonstrates the improvement of the molecular beam epitaxial growth of zinc-blende CdSe on (0 0 1) GaAs substrate with a large lattice mismatch by introducing a small amount of Te atoms. Exposing the growing surface to Te atoms changes the reflection high-energy electron diffraction pattern from spotty to streaky together with (2 × 1) surface reconstruction, and greatly reduces the full width at half maximum of the X-ray rocking curve and increases the integral intensity of room-temperature photoluminescence by a factor of about nine.

  14. Energy Harvesting for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions

    Science.gov (United States)

    Teran, Alan S.; Moon, Eunseong; Lim, Wootaek; Kim, Gyouho; Lee, Inhee; Blaauw, David; Phillips, Jamie D.

    2016-01-01

    GaAs photovoltaics are promising candidates for indoor energy harvesting to power small-scale (≈1 mm2) electronics. This application has stringent requirements on dark current, recombination, and shunt leakage paths due to low-light conditions and small device dimensions. The power conversion efficiency and the limiting mechanisms in GaAs photovoltaic cells under indoor lighting conditions are studied experimentally. Voltage is limited by generation–recombination dark current attributed to perimeter sidewall surface recombination based on the measurements of variable cell area. Bulk and perimeter recombination coefficients of 1.464 pA/mm2 and 0.2816 pA/mm, respectively, were extracted from dark current measurements. Resulting power conversion efficiency is strongly dependent on cell area, where current GaAs of 1-mm2 indoor photovoltaic cells demonstrates power conversion efficiency of approximately 19% at 580 lx of white LED illumination. Reductions in both bulk and perimeter sidewall recombination are required to increase maximum efficiency (while maintaining small cell area near 1 mm2) to approach the theoretical power conversion efficiency of 40% for GaAs cells under typical indoor lighting conditions. PMID:28133394

  15. Temperature dependence of lattice parameter of (Ga,Mn)As on GaAs substrate

    Science.gov (United States)

    Matsukura, Fumihiro; Ohno, Hideo

    2015-09-01

    We measure the temperature dependence of the lattice parameter of (Ga,Mn)As by X-ray diffraction. The result shows that the lattice parameter of (Ga,Mn)As shows similar temperature dependence to that of GaAs, and no obvious change is observed in the vicinity of its Curie temperature.

  16. Polarity driven simultaneous growth of free-standing and lateral GaAsP epitaxial nanowires on GaAs (001) substrate

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Wen; Xu, Hongyi [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Guo, Yanan [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Gao, Qiang; Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200 (Australia); Zou, Jin, E-mail: j.zou@uq.edu.au [Materials Engineering, The University of Queensland, St Lucia QLD 40732 (Australia); Centre for Microscopy and Microanalysis, The University of Queensland, St Lucia QLD 4072 (Australia)

    2013-11-25

    Simultaneous growth of 〈111〉{sub B} free-standing and ±[110] lateral GaAsP epitaxial nanowires on GaAs (001) substrates were observed and investigated by electron microscopy and crystallographic analysis. It was found that the growth of both free-standing and lateral ternary nanowires via Au catalysts was driven by the fact that Au catalysts prefer to maintain low-energy (111){sub B} interfaces with surrounding GaAs(P) materials: in the case of free-standing nanowires, Au catalysts maintain (111){sub B} interfaces with their underlying GaAsP nanowires; while in the case of lateral nanowires, each Au catalyst remain their side (111){sub B} interfaces with the surrounding GaAs(P) material during the lateral nanowire growth.

  17. Transformation kinetics of mixed polymeric substrates under ...

    African Journals Online (AJOL)

    Transformation kinetics of mixed polymeric substrates under transitory conditions by Aspergillus niger. ... Abstract. A mixture of polymeric substrates (simulating a complex wastewater) was transformed under sewer conditions and aerobiosis by Aspergillus niger in a tanks-in-series reactor at a hydraulic retention time of 14 h.

  18. Nucleation and Growth of GaN on GaAs (001) Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

    1999-05-03

    The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

  19. High mobility single-crystalline-like GaAs thin films on inexpensive flexible metal substrates by metal-organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, P., E-mail: pdutta2@central.uh.edu; Rathi, M.; Gao, Y.; Yao, Y.; Selvamanickam, V. [Department of Mechanical Engineering, University of Houston, Houston, Texas 77204 (United States); Zheng, N.; Ahrenkiel, P. [Department of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, South Dakota 57701 (United States); Martinez, J. [Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, Texas 77085 (United States)

    2014-09-01

    We demonstrate heteroepitaxial growth of single-crystalline-like n and p-type doped GaAs thin films on inexpensive, flexible, and light-weight metal foils by metal-organic chemical vapor deposition. Single-crystalline-like Ge thin film on biaxially textured templates made by ion beam assisted deposition on metal foil served as the epitaxy enabling substrate for GaAs growth. The GaAs films exhibited strong (004) preferred orientation, sharp in-plane texture, low grain misorientation, strong photoluminescence, and a defect density of ∼10{sup 7 }cm{sup −2}. Furthermore, the GaAs films exhibited hole and electron mobilities as high as 66 and 300 cm{sup 2}/V-s, respectively. High mobility single-crystalline-like GaAs thin films on inexpensive metal substrates can pave the path for roll-to-roll manufacturing of flexible III-V solar cells for the mainstream photovoltaics market.

  20. Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

    Science.gov (United States)

    Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

    2010-04-01

    ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

  1. Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111 substrates: a potential route to fabricate topological insulator p-n junction

    Directory of Open Access Journals (Sweden)

    Zhaoquan Zeng

    2013-07-01

    Full Text Available High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111 substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111 substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111 substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111 substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

  2. Transformation kinetics of mixed polymeric substrates under ...

    African Journals Online (AJOL)

    bglucosidase and a-mannosidase were abundantly secreted in the growth medium. This research is the first report on mixed polymeric substrate biodegradation under sewer condition by A. niger, and could be considered as an open window on ...

  3. Growth of AlGaSb Compound Semiconductors on GaAs Substrate by Metalorganic Chemical Vapour Deposition

    Directory of Open Access Journals (Sweden)

    A. H. Ramelan

    2010-01-01

    Full Text Available Epitaxial AlxGa1-xSb layers on GaAs substrate have been grown by atmospheric pressure metalorganic chemical vapour deposition using TMAl, TMGa, and TMSb. We report the effect of V/III flux ratio and growth temperature on growth rate, surface morphology, electrical properties, and composition analysis. A growth rate activation energy of 0.73 eV was found. For layers grown on GaAs at 580∘C and 600∘C with a V/III ratio of 3 a high quality surface morphology is typical, with a mirror-like surface and good composition control. It was found that a suitable growth temperature and V/III flux ratio was beneficial for producing good AlGaSb layers. Undoped AlGaSb grown at 580∘C with a V/III flux ratio of 3 at the rate of 3.5 μm/hour shows p-type conductivity with smooth surface morphology and its hole mobility and carrier concentration are equal to 237 cm2/V.s and 4.6 × 1017 cm-3, respectively, at 77 K. The net hole concentration of unintentionally doped AlGaSb was found to be significantly decreased with the increased of aluminium concentration. All samples investigated show oxide layers (Al2O3, Sb2O3, and Ga2O5 on their surfaces. In particular the percentage of aluminium-oxide was very high compared with a small percentage of AlSb. Carbon content on the surface was also very high.

  4. Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Li, K.L., E-mail: klli2010@sinano.ac.cn [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Sun, Y.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Dong, J.R. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); He, Y.; Zeng, X.L. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhao, Y.M.; Yu, S.Z.; Zhao, C.Y. [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China)

    2015-10-30

    High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 × 10{sup 6} cm{sup −2} and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga{sub 1−x}In{sub x}P (x = 0.48–0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. - Highlights: • Metamorphic GaInP buffers were grown by metal–organic chemical vapor deposition. • The compositionally undulating buffers effectively reduce the threading dislocation density. • High quality strain-relaxed In{sub 0.3}Ga{sub 0.7}As layers were obtained.

  5. Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates

    International Nuclear Information System (INIS)

    Li, K.L.; Sun, Y.R.; Dong, J.R.; He, Y.; Zeng, X.L.; Zhao, Y.M.; Yu, S.Z.; Zhao, C.Y.

    2015-01-01

    High quality strain-relaxed In0.3Ga0.7As layers with threading dislocation density about 2 × 10 6 cm −2 and root-mean-square surface roughness below 8.0 nm were obtained on GaAs substrates using compositionally undulating step-graded Ga 1−x In x P (x = 0.48–0.78) buffers. The transmission electron microscopy results reveal that the conventional step-graded GaInP buffers produce high density dislocation pile-ups, which are induced by the blocking effect of the nonuniform misfit dislocation strain field and crosshatched surface on the gliding of threading dislocations. In contrast, due to strain compensation, insertion of the tensile GaInP layers decreases the surface roughness and promotes dislocation annihilation in the interfaces, and eventually reduces the threading dislocation density. This provides a promising way to achieve a virtual substrate with the desired lattice parameter for metamorphic device applications. - Highlights: • Metamorphic GaInP buffers were grown by metal–organic chemical vapor deposition. • The compositionally undulating buffers effectively reduce the threading dislocation density. • High quality strain-relaxed In 0.3 Ga 0.7 As layers were obtained.

  6. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    International Nuclear Information System (INIS)

    Shim, Byoung Rho; Torii, Satoshi; Ota, Takeshi; Kobayashi, Keisuke; Maehashi, Kenzo; Nakashima, Hisao; Lee, Sang Yun

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In x Ga 1-x As layers with x≤ 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing InGaAs thickness. The degree of polarization for the InGaAs QWRs was about 0.29. The PL observation evidences the carrier confinement in the QWRs. These results indicate that locally thick InGaAs strained QWRs were successfully formed at the edge of AlGaAs giant steps

  7. Transmission electron microscopy and photoluminescence characterization of InGaAs strained quantum wires on GaAs vicinal (110) substrates

    CERN Document Server

    Shim, B R; Ota, T; Kobayashi, K; Maehashi, K; Nakashima, H; Lee, S Y

    1999-01-01

    We have used transmission electron microscopy (TEM) and photoluminescence (PL) to study InGaAs/AlGaAs strained quantum wires (QWRs) grown by molecular beam epitaxy (MBE) on GaAs vicinal (110) substrates. The cross-sectional TEM image reveals that InGaAs QWRs structures are naturally formed on AlGaAs giant steps. In the plan-view TEM images, the fringe pattern in the giant-step region is observed for In sub x Ga sub 1 sub - sub x As layers with x<= 0.4 We measured the separation of the fringe in the plan-view TEM images and compared the result with the calculated fringe separation. From this result, we conclude that the fringes observed in the plan-view TEM images are moire fringes. PL spectra of the InGaAs QWRs samples reveal 80-meV shifts to lower energy with respect to the spectrum of a quantum well (QWL) grown on a (001) substrate under the same conditions. We also measured the polarization anisotropy of the PL spectra from the QWRs. The PL peak shifts systematically toward higher energy with decreasing...

  8. Annealing effects on electrical and optical properties of ZnO thin-film samples deposited by radio frequency-magnetron sputtering on GaAs (001) substrates

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Hu, G. X.; Gong, H.; Xiang, N.

    2007-01-01

    The effects of thermal annealing on Hall-effect measurement and photoluminescence (PL) from undoped n-type ZnO/GaAs thin-film samples have been studied. The evolutions of carrier concentration, electrical resistivity, and PL spectrum at various annealing conditions reveal that the dominant mechanism that affects the electrical and PL properties is dependent on the amount of thermal energy and the ambient pressure applied during the annealing process. At low annealing temperatures, annihilation of native defects is dominant in reducing the carrier concentration and weakening the low-energy tail of the main PL peak, while the GaAs substrate plays only a minor role in carrier compensations. For the higher temperatures, diffusion of Ga atoms from the GaAs substrate into ZnO film leads to a more n-type conduction of the sample. As a result, the PL exhibits a high-energy tail due to the high-level doping

  9. Surface reconstruction of GaAs(001) nitrided under the controlled As partial pressure [rapid communication

    Science.gov (United States)

    Imayoshi, Takahiro; Oigawa, Haruhiro; Shigekawa, Hidemi; Tokumoto, Hiroshi

    2003-08-01

    Under the controlled As partial pressure, the nitridation process of GaAs(0 0 1)-(2 × 4) surface was studied using a scanning tunneling microscope (STM) combined with an electron cyclotron resonance plasma-assisted molecular beam epitaxy system. With either prolonging the nitridation time or decreasing the As partial pressure, the previously reported (3 × 3) structure with two dimers per surface cell ((3 × 3)-2D) was found to progressively convert into a new (3 × 3) structure characterized by one dimer per surface cell ((3 × 3)-1D). Reversely the exposure to arsenic transformed the structure from (3 × 3)-1D to (3 × 3)-2D, suggesting that the topmost layer is composed of As 2-dimers. Based on these STM images together with the X-ray photoelectron spectroscopy data, we propose the new As 2-dimer coverage models to explain both (3 × 3)-1D and -2D structures involving the exchange reaction of arsenic with nitrogen in the subsurface region of GaAs.

  10. Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

    Czech Academy of Sciences Publication Activity Database

    Dimitrakopulos, G.P.; Bazioti, C.; Grym, Jan; Gladkov, Petar; Hulicius, Eduard; Pangrác, Jiří; Pacherová, Oliva; Komninou, Ph.

    2014-01-01

    Roč. 306, Jul (2014), s. 89-93 ISSN 0169-4332 R&D Projects: GA MŠk 7AMB12GR034 Institutional support: RVO:68378271 ; RVO:67985882 Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.711, year: 2014

  11. Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array

    Science.gov (United States)

    Korkmaz, Melih; Arikan, Bulent; Eren Suyolcu, Y.; Aslan, Bulent; Serincan, Uğur

    2018-03-01

    We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs buffer/GaSb epilayer interface to reduce the dislocation density of the SL structure grown on the lattice mismatched GaAs substrate. Optical and electrical performance of this sample (SL-GaAs) were then compared with the reference sample of the same structure grown on a GaSb substrate (SL-GaSb). At 80 K, the dark current density and the detectivity values of the pin photodetectors were recorded as 5.40 × 10-3 A cm-2 and 2.34 × 1010 cm Hz0.5 W-1 for the SL-GaAs and 9.50 × 10-4 A cm-2 and 4.70 × 1010 cm Hz0.5 W-1 for the SL-GaSb, respectively.

  12. The effect of sulphur-terminated GaAs substrates on the MOVPE growth of CuGaS{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Berndt, P.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa)]. E-mail: pearl.berndt@nmmu.ac.za; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Branch, M.S. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Kirmse, H. [Institute of Physics, Chair of Crystallography, Humboldt University of Berlin, Berlin (Germany); Neumann, W. [Institute of Physics, Chair of Crystallography, Humboldt University of Berlin, Berlin (Germany); Weber, J. [Institute for Applied Physics-Semiconductor Physics, University of Technology, Dresden (Germany)

    2007-05-31

    In this study, various CuGaS{sub 2} layers were grown on GaAs (001) substrates using metalorganic vapour phase epitaxy, for the purpose of studying the effect of sulphur-termination of the substrate on layer quality. The resultant films were investigated using X-ray diffractometry, and transmission electron microscopy, with high-resolution transmission electron microscopy providing additional insights into crystallite growth on the control substrates. This paper will demonstrate that sulphur-termination limits substrate degradation. In the absence of sulphur-termination, atypical three-dimensional MOVPE growth is observed, with epitaxial crystallites varying in size from 10 nm to 200 nm. Substrate degradation inhibits lateral growth at the interface resulting in amorphous regions, cavities, and epitaxial crystallites demonstrating overgrowth into mushroom-like structures.

  13. The effect of sulphur-terminated GaAs substrates on the MOVPE growth of CuGaS2 thin films

    International Nuclear Information System (INIS)

    Berndt, P.R.; Botha, J.R.; Branch, M.S.; Leitch, A.W.R.; Kirmse, H.; Neumann, W.; Weber, J.

    2007-01-01

    In this study, various CuGaS 2 layers were grown on GaAs (001) substrates using metalorganic vapour phase epitaxy, for the purpose of studying the effect of sulphur-termination of the substrate on layer quality. The resultant films were investigated using X-ray diffractometry, and transmission electron microscopy, with high-resolution transmission electron microscopy providing additional insights into crystallite growth on the control substrates. This paper will demonstrate that sulphur-termination limits substrate degradation. In the absence of sulphur-termination, atypical three-dimensional MOVPE growth is observed, with epitaxial crystallites varying in size from 10 nm to 200 nm. Substrate degradation inhibits lateral growth at the interface resulting in amorphous regions, cavities, and epitaxial crystallites demonstrating overgrowth into mushroom-like structures

  14. Growth of strained ZnSe layers on GaAs substrates by pulsed laser deposition carried out in an off-axis deposition geometry

    Energy Technology Data Exchange (ETDEWEB)

    Ganguli, Tapas [Raja Ramanna Centre for Advanced Technology, Indore, 452 013 (India)], E-mail: tapas@cat.ernet.in; Porwal, Sanjay; Sharma, Tarun; Ingale, Alka; Kumar, Shailendra; Tiwari, Pragya [Raja Ramanna Centre for Advanced Technology, Indore, 452 013 (India); Balamurugan, A.K.; Rajagopalan, S.; Tyagi, A.K. [Materials Science Division, IGCAR, Kalpakkam 603 102 (India); Chandrasekaran, K.S.; Arora, B.M. [Department of Condensed Matter Physics and Materials Science, TIFR, Mumbai 400 005 (India); Rustagi, K.C. [Department of Physics, IIT, Powai, Mumbai 400 076 (India)

    2007-07-31

    We have deposited thin layers of ZnSe on (001) oriented GaAs substrates by pulsed laser deposition at different incident laser fluence (referred to as normal geometry) and in an off-axis geometry where the plasma plume direction is at an angle of {approx} 25{sup o} away from the direction of the substrate. The crystalline quality of these layers has been studied by high-resolution X-ray diffraction measurements and Raman scattering. We find that we are in a position to deposit pseudomorphic strained layers of ZnSe on GaAs in the off-axis deposition geometry when the ZnSe layer thickness is less than the critical thickness of ZnSe on GaAs i.e. 150 nm. Secondary ion mass spectroscopy, scanning electron microscopy, photoluminescence and electrical transport measurements have also been carried out in all the ZnSe layers and the results of all the above characterizations have been compared for the normal geometry and the off-axis geometry of deposition. All the results indicate that the ZnSe layers deposited in the off-axis geometry have better crystalline quality and an improved interface as compared to the ones deposited in the normal geometry. We attribute this improvement in the overall quality of the ZnSe layers in the off-axis geometry to the reduction in the average energy of the plume particles that reach the GaAs substrate in the off-axis geometry.

  15. Peeled film GaAs solar cell development

    Science.gov (United States)

    Wilt, D. M.; Thomas, R. D.; Bailey, S. G.; Brinker, D. J.; Deangelo, F. L.

    1990-01-01

    Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

  16. Peeled film GaAs solar cell development

    Science.gov (United States)

    Wilt, D. M.; Thomas, R. D.; Bailey, S. G.; Brinker, D. J.; Deangelo, F. L.

    Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid. The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide window and antireflective coating, had a Voc of 874 mV and a fill factor of 68 percent under AM0 illumination.

  17. Atomic-scale epitaxial aluminum film on GaAs substrate

    Directory of Open Access Journals (Sweden)

    Yen-Ting Fan

    2017-07-01

    Full Text Available Atomic-scale metal films exhibit intriguing size-dependent film stability, electrical conductivity, superconductivity, and chemical reactivity. With advancing methods for preparing ultra-thin and atomically smooth metal films, clear evidences of the quantum size effect have been experimentally collected in the past two decades. However, with the problems of small-area fabrication, film oxidation in air, and highly-sensitive interfaces between the metal, substrate, and capping layer, the uses of the quantized metallic films for further ex-situ investigations and applications have been seriously limited. To this end, we develop a large-area fabrication method for continuous atomic-scale aluminum film. The self-limited oxidation of aluminum protects and quantizes the metallic film and enables ex-situ characterizations and device processing in air. Structure analysis and electrical measurements on the prepared films imply the quantum size effect in the atomic-scale aluminum film. Our work opens the way for further physics studies and device applications using the quantized electronic states in metals.

  18. Electrical characterisation of deep level defects in Be-doped AlGaAs grown on (100 and (311A GaAs substrates by MBE

    Directory of Open Access Journals (Sweden)

    Henini Mohamed

    2011-01-01

    Full Text Available Abstract The growth of high mobility two-dimensional hole gases (2DHGs using GaAs-GaAlAs heterostructures has been the subject of many investigations. However, despite many efforts hole mobilities in Be-doped structures grown on (100 GaAs substrate remained considerably lower than those obtained by growing on (311A oriented surface using silicon as p-type dopant. In this study we will report on the properties of hole traps in a set of p-type Be-doped Al0.29Ga0.71As samples grown by molecular beam epitaxy on (100 and (311A GaAs substrates using deep level transient spectroscopy (DLTS technique. In addition, the effect of the level of Be-doping concentration on the hole deep traps is investigated. It was observed that with increasing the Be-doping concentration from 1 × 1016 to 1 × 1017 cm-3 the number of detected electrically active defects decreases for samples grown on (311A substrate, whereas, it increases for (100 orientated samples. The DLTS measurements also reveal that the activation energies of traps detected in (311A are lower than those in (100. From these findings it is expected that mobilities of 2DHGs in Be-doped GaAs-GaAlAs devices grown on (311A should be higher than those on (100.

  19. Electric-field effect on magnetic anisotropy in Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates

    Science.gov (United States)

    Hayashi, Yohei; Hibino, Yuki; Matsukura, Fumihiro; Miwa, Kazumoto; Ono, Shimpei; Hirai, Takamasa; Koyama, Tomohiro; Ohno, Hideo; Chiba, Daichi

    2018-01-01

    We investigate the electric-field effect on the magnetic anisotropy in perpendicularly magnetized Pt/Co/Pd/MgO structures deposited on GaAs and Si substrates as a function of temperature. An electric field is applied to the Pd surface through a 2-nm-thick insulating MgO layer by forming an electric double layer using an ionic liquid. We find that the electric-field dependence of the anisotropy is similar but clearly different between the two samples at low temperatures. The difference is expected to be related to the difference in the internal strain of the two structures.

  20. Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

    International Nuclear Information System (INIS)

    Hao Ruiting; Deng Shukang; Shen Lanxian; Yang Peizhi; Tu Jielei; Liao Hua; Xu Yingqiang; Niu Zhichuan

    2010-01-01

    GaSb films with AlSb/GaSb compound buffer layers were grown by molecular beam epitaxy on GaAs (001) substrates. The crystal quality and optical properties were studied by high resolution transition electron microscopy and low temperature photoluminescence spectra (PL), respectively. It was found that the AlSb/GaSb compound buffer layers can restrict the dislocations into GaSb epilayers. The intensity of PL spectra of GaSb layer becomes large with the increasing the periods of AlSb/GaSb superlattices, indicating that the optical quality of GaSb films is improved.

  1. Assignments of transitions in optically-pumped NMR of GaAs/AlGaAs quantum wells on a bulk GaAs substrate

    Science.gov (United States)

    Sesti, E. L.; Wheeler, D. D.; Hayes, S. E.; Saha, D.; Sanders, G. D.; Stanton, C. J.

    2014-09-01

    We investigate optically-pumped nuclear magnetic resonance (OPNMR) in GaAs/AlGaAs multiple quantum wells. The photon energy dependence of the 69Ga OPNMR shows a sign change in the signal at the light-hole transition for both σ+ and σ- circular polarized irradiation. The energy for this transition and those of other Landau levels can be predicted by an eight-band k⃗.p⃗ theory used to calculate the conduction band spin polarization. Comparison of the spin polarization with the OPNMR measurements shows the origin of many features. In addition, we find features associated with the bulk GaAs substrate. In an external magnetic field, there are regions of low quantum well absorptivity between the Landau levels and in this region, OPNMR signals arising from the bulk GaAs substrate can be observed. The discrete nature of transitions between Landau levels in two-dimensional electron systems compared to the Landau levels in three-dimensional systems leads to the change in the phase of the OPNMR signal at the light-hole transitions.

  2. Structure, magnetism, and interface properties of epitactical thin Fe and FePt films on GaAs(001) substrates; Struktur, Magnetismus und Grenzflaecheneigenschaften epitaktischer duenner Fe- und FePt-Filme auf GaAs(001)-Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Schuster, Ellen Ursula

    2007-12-17

    The research in this thesis is focused on the study of the Fe spin structure and interface magnetism of thin epitaxial Fe layers or epitaxial FePt alloy films with chemical L1{sub 0} order on GaAs(001) surfaces. The main method of investigation was isotope-specific conversion electron Moessbauer spectroscopy (CEMS) combined with the {sup 57}Fe probe-layer technique in the temperature range of 4.2-300 K. The film structure was studied using electron diffraction (RHEED) and X-ray diffraction (XRD). The chemical order parameter S determined by XRD was found to increase with rising growth temperature, T{sub S}, to a maximum value of 0.71, until long range order is destroyed at T{sub S}>350 C by alloying with the substrate. As an important result a linear correlation between short-range order (revealed by the relative spectral area of the L1{sub 0} phase) and long-range order S was observed. The observed perpendicular Fe spin texture, characterized by the mean tilting angle left angle {theta} right angle of the Fe spins (relative to the film normal direction), was found to correlate with the L1{sub 0} phase content and with S. Furthermore, epitaxial Fe(001) films on GaAs(001)-(4 x 6) and on GaAs(001)-LED surfaces were grown successfully. In the initial stage of Fe film growth non-monotonous behavior of the in-plane lattice parameter was observed by RHEED. The magnetic hyperfine field distributions P(B{sub hf}) at the Fe/GaAs interface extracted from CEMS spectra for T{sub S}=-140 C or room temperature (RT) were found to be very similar. The observed large mean hyperfine fields of left angle B{sub hf} right angle {approx}25-27 T at the interface indicate the presence of high average Fe moments of 1.7-1.8 {mu}{sub B}. Nonmagnetic interface layers either can be excluded (Fe/GaAs) or are very thin (0.5 ML,Fe/GaAs-LED). Owing to its island structure an ultrathin (1.9 ML thick) uncoated Fe(001) film on GaAs(001)-(4 x 6) shows superparamagnetism with a blocking temperature of

  3. Parallel-aligned GaAs nanowires with (110) orientation laterally grown on [311]B substrates via the gold-catalyzed vapor-liquid-solid mode

    International Nuclear Information System (INIS)

    Zhang Guoqiang; Tateno, Kouta; Gotoh, Hideki; Nakano, Hidetoshi

    2010-01-01

    We report parallel aligned GaAs nanowires (NWs) with (110) orientation laterally grown on [311]B substrates via the vapor-liquid-solid mode and demonstrate their controllability and growth mechanism. We control the size, density, and site of the lateral NWs by using size- and density-selective Au colloidal particles and Au dot arrays defined by electron-beam lithography. The lateral NWs grow only along the [110] and [1-bar 1-bar 0] directions and formation of the stable facets of (111)B and (001) on the sides of the lateral NWs is crucial for lateral NW growth. We clarify the growth mechanism by comparing the growth results on [311]B, (311)A, and (001) substrates and the surface energy change of lateral and freestanding NWs.

  4. Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure

    Science.gov (United States)

    Asai, K.; Feng, J. M.; Vaccaro, P. O.; Fujita, K.; Ohachi, T.

    2000-06-01

    The As vapor pressure dependence of the Ga desorption rate during molecular beam epitaxy (MBE) growth on GaAs( n11)A ( n=1-4 hereafter) substrates was studied by photoluminescence (PL) measurements at 12 K for undoped AlGaAs/GaAs asymmetric double quantum wells (ADQWs). Reflection high energy electron diffraction (RHEED) oscillation measurements on a GaAs(100) surface were also used. Two K-cells of As solid sources (corresponding to beam equivalent pressures (BEPs) of 9.0×10 -6 and 4.5×10 -5 Torr) were used to change the As pressure rapidly. The Ga flux and substrate temperature were kept constant at 0.76 ML/s and 12 K, respectively, while the As flux changed from 7.6 (BEP 9.0×10 -6 Torr) to 32 ML/s (4.5×10 -5 Torr). With increasing As pressure, two separated PL peaks for the wide well (WW) of high index substrates were observed. This peak separation is attributed to a reduced well depth from an increasing Ga desorption rate. The energy differences of the PL peak depending on the off-angle from (111)A to (100) plane indicates an orientation-dependent Ga desorption rate. Moreover, amongst all ( n11)A and (100) planes, the Ga desorption rate was smallest from the (111)A surface. The increase of Ga desorption from the surface at high As pressures probably arose from an increasing coverage with a quasi-liquid layer (QLL).

  5. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    International Nuclear Information System (INIS)

    Kumar, Rahul; Bag, Ankush; Mukhopadhyay, Partha; Das, Subhashis; Biswas, Dhrubes

    2015-01-01

    Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  6. Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: Tilt dependence on cross-hatch irregularities

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Rahul, E-mail: rkp203@gmail.com [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Bag, Ankush [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Mukhopadhyay, Partha [Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur 721302 (India); Das, Subhashis [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721302 (India); Biswas, Dhrubes [Department of Electronics & Electrical Communication Engineering, Indian Institute of Technology, Kharagpur 721 302 (India)

    2015-12-01

    Highlights: • InGaAs graded MBs with different grading scheme has been grown by MBE on GaAs. • Continuously graded MB exhibits smoother surface morphology. • Grading scheme has been found to have little impact on lattice relaxation. • Grading schemeaffects the lattice tilt significantly. • Cross-hatch surface irregularities affect the crystallographic tilt. - Abstract: InGaAs graded metamorphic buffers (MBs) with different grading strategies have been grown by molecular beam epitaxy (MBE) on GaAs (0 0 1) substrate. A detailed comparative analysis of surface using atomic force microscopy (AFM), and bulk properties using high resolution X-ray diffraction (HRXRD) and room temperature photoluminescence (RTPL) of grown MBs have been presented to comprehend the effectiveness of different grading scheme on InGaAs MBs. Conventional, statistical and fractal analysis on measured AFM data has been performed for in-depth investigation of these surfaces. The grading scheme has been found to have little impact on residual strain while it affects the epitaxial tilt significantly. Moreover, the tilt has been found to depend on growth front irregularities. Tilt magnitude in a graded MB has been found to vary with composition while tilt azimuth has been found to be almost same in the graded layers. PL Intensity and a shift in the PL peaks have been used to study the quality of the MB and residual strain comparatively.

  7. Experimental investigations of atomic ordering effects in the epitaxial Ga{sub x}In{sub 1-x}P, coherently grown on GaAs (100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Seredin, P.V., E-mail: paul@phys.vsu.ru [Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh (Russian Federation); Goloshchapov, D.L.; Khudyakov, Yu.Yu.; Lenshin, A.S.; Lukin, A.N. [Voronezh State University, Universitetskaya pl., 1, 394006 Voronezh (Russian Federation); Arsentyev, I.N., E-mail: arsentyev@mail.ioffe.ru [Ioffe Physical and Technical Institute, Polytekhnicheskaya, 26, 194021 St-Petersburg (Russian Federation); Prutskij, Tatiana, E-mail: prutskij@yahoo.com [Instituto de Ciencias, Benemérita Universidad Autónoma de Puebla, Privada 17 Norte, No 3417, Col San Miguel Hueyotlipan, 72050 Puebla, Puebla (Mexico)

    2017-03-15

    A range of structural and spectroscopic techniques were used for the study of the properties of epitaxial Ga{sub x}In{sub 1-x}P alloys with an ordered arrangement of atoms in a crystal lattice grown by MOCVD on single-crystalline substrates of GaAs (100). The appearance of atomic ordering in the coherent growth conditions of the ordered Ga{sub x}In{sub 1-x}P alloy on GaAs (100) resulted in cardinal changes of the structural and optical properties of semiconductor in comparison to disordered alloys, including the change of the crystal lattice parameter and, consequently, reduced crystal symmetry, decreased band gap and formation of two different types of surface nanorelief. This is the first report of the calculation of parameters of the crystal lattice in Ga{sub x}In{sub 1-x}P with ordering taking into account the elastic stresses dependent on long-range ordering. Based on the variance analysis data with regard to the IR-reflection spectra as well as the UV-spectroscopy data obtained in the transmission-reflection mode, the main optical characteristics of the ordered Ga{sub x}In{sub 1-x}P alloys were determined for the first time, namely, refractive index dispersion and high-frequency dielectric constant. All of the experimental results were in good agreement with the previously developed theoretical beliefs.

  8. GaAs FETs and novel heteroepitaxial quaternary lasers grown on InP substrates by organometallic chemical vapor deposition

    International Nuclear Information System (INIS)

    Lo, Y.H.; Bhat, R.; Chang-Hasnain, C.; Caneau, C.; Zah, C.E.; Lee, T.P.

    1988-01-01

    This paper reports the GaAs MESFETs and 1.3μm buried hetero-structure lasers with AlGaAs/GaAs lateral confinement layers simultaneously grown by OMCVD and fabricated on InP structures. The 1μm recessed gate MESFET has a transconductance of 220 mS/mm and the novel structured laser has a CW threshold current of 45 mA. The heteroepitaxy technology and devices show great promises for long wavelength opto-electronic integrated circuits

  9. Implanted Si atoms shifting between Ga sites and As sites by thermal stress in conductive-layer GaAs crystals on semi-insulating substrates

    Science.gov (United States)

    Saito, Yasuyuki

    1992-04-01

    Large (0.8 V order) discrepancies of threshold voltage Vth between the predicted Vth values by the Lindhard-Scharff-Schio/tt Gaussian approximate calculation and the Vth of the tungsten nitride (WNx) self-alignment (SA) gate GaAs metal-semiconductor field-effect transistors (MESFETs) were observed. These discrepancies were confirmed by the comparison of the Vth of the WNx-SA-gate MESFETs and the Vth of the (N+: high carrier concentration layers self-aligned of source-drain electrodes)-less conventional MESFETs on 2-in.-diam semi-insulating substrates from liquid-encapsulated-Czochralski-technique-grown boules. The discrepancy was also analyzed by the capacitance-voltage (C-V) measurement of large-diameter (440 μm) Schottky diodes which were built into the MESFET arrays. It was found that for obtained SA-process carrier depth profiles (Si, 150 keV, 3×1012 cm-2) the carrier concentration at a depth of 0.25 μm decreased from 5.3×1016 to 2.0×1016 cm-3, but, on the other hand, the peak carrier concentration slightly decreased from 12.8×1016 to 12.4×1016 cm-3. By the calculation for Vth on the basis of the actual C-V carrier depth profiles, it was found that the carrier concentration decrease was comparable to the Vth variation (0.8 V). Furthermore, the Vth variation of the shallow channel implantation (50 keV) was comparable to that of the deep channel implantation (150 keV). As a result of the experiment and analysis, it was found that the large Vth variation for the SA N+ process was caused by reoccupation (Ga sites to As sites) of implanted Si atoms in the channel active-layer crystal by tensile stress formed by the thermal-expansion coefficient difference between chemical-vapor deposition (CVD) phosphosilicate glass (or CVD SiO2) film and (100) GaAs substrate crystal. The Si atom reoccupation quantity was, for the first time, explained by the Si atom compensation ratio equation as a function of the bond length (Si-As and Si-Ga) variation, an equation which

  10. Miniaturized bandpass filter using a meandered stepped-impedance resonator with a meandered-line stub-load on a GaAs substrate.

    Science.gov (United States)

    Chuluunbaatar, Z; Wang, C; Kim, N Y

    2014-01-01

    This paper reports a compact bandpass filter with improved skirt selectivity using integrated passive device fabrication technology on a GaAs substrate. The structure of the filter consists of electromagnetically coupled meandered-line symmetric stepped-impedance resonators. The strength of the coupling between the resonators is enhanced by using a meandered-line stub-load inside the resonators to improve the selectivity and miniaturize the size of the filter. In addition, the center frequency of the filter can be flexibly controlled by varying degrees of the capacitive coupling between resonator and stub-load. To verify the proposed concept, a protocol bandpass filter with center frequency of 6.53 GHz was designed, fabricated, and measured, with a return loss and insertion loss of 39.1 dB and 1.63 dB.

  11. Miniaturized Bandpass Filter Using a Meandered Stepped-Impedance Resonator with a Meandered-Line Stub-Load on a GaAs Substrate

    Directory of Open Access Journals (Sweden)

    Z. Chuluunbaatar

    2014-01-01

    Full Text Available This paper reports a compact bandpass filter with improved skirt selectivity using integrated passive device fabrication technology on a GaAs substrate. The structure of the filter consists of electromagnetically coupled meandered-line symmetric stepped-impedance resonators. The strength of the coupling between the resonators is enhanced by using a meandered-line stub-load inside the resonators to improve the selectivity and miniaturize the size of the filter. In addition, the center frequency of the filter can be flexibly controlled by varying degrees of the capacitive coupling between resonator and stub-load. To verify the proposed concept, a protocol bandpass filter with center frequency of 6.53 GHz was designed, fabricated, and measured, with a return loss and insertion loss of 39.1 dB and 1.63 dB.

  12. Site-controlled lateral arrangements of InAs quantum dots grown on GaAs(001) patterned substrates by atomic force microscopy local oxidation nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    Martin-Sanchez, J; Alonso-Gonzalez, P; Herranz, J; Gonzalez, Y; Gonzalez, L [Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8 (PTM), 28760-Tres Cantos, Madrid (Spain)

    2009-03-25

    In this work, we present a fabrication process that combines atomic force microscopy (AFM) local oxidation nanolithography and molecular beam epitaxy (MBE) growth techniques in order to control both the nucleation site and number of InAs quantum dots (QDs) inside different motifs printed on GaAs(001) substrates. We find that the presence of B-type slopes (As terminated) inside the pattern motifs is the main parameter for controlling the selectivity of the pattern for InAs growth. We demonstrate that either single InAs QDs or multiple InAs QDs in a lateral arrangement (LQDAs) can be obtained, with a precise control in their position and QD number, simply by varying the fabricated oxide length along the [110] direction.

  13. Photoluminescence characteristics of ZnTe bulk crystal and ZnTe epilayer grown on GaAs substrate by MOVPE

    Science.gov (United States)

    Lü, Hai-Yan; Mu, Qi; Zhang, Lei; Lü, Yuan-Jie; Ji, Zi-Wu; Feng, Zhi-Hong; Xu, Xian-Gang; Guo, Qi-Xin

    2015-12-01

    Excitation power and temperature-dependent photoluminescence (PL) spectra of the ZnTe epilayer grown on (100) GaAs substrate and ZnTe bulk crystal are investigated. The measurement results show that both the structures are of good structural quality due to their sharp bound excitonic emissions and absence of the deep level structural defect-related emissions. Furthermore, in contrast to the ZnTe bulk crystal, although excitonic emissions for the ZnTe epilayer are somewhat weak, perhaps due to As atoms diffusing from the GaAs substrate into the ZnTe epilayer and/or because of the strain-induced degradation of the crystalline quality of the ZnTe epilayer, neither the donor-acceptor pair (DAP) nor conduction band-acceptor (e-A) emissions are observed in the ZnTe epilayer. This indicates that by further optimizing the growth process it is possible to obtain a high-crystalline quality ZnTe heteroepitaxial layer that is comparable to the ZnTe bulk crystal. Project supported by the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20120131110006), the Key Science and Technology Program of Shandong Province, China (Grant No. 2013GGX10221), the Key Laboratory of Functional Crystal Materials and Device (Shandong University, Ministry of Education), China (Grant No. JG1401), the National Natural Science Foundation of China (Grant No. 61306113), the Major Research Plan of the National Natural Science Foundation of China (Grant No. 91433112), and the Partnership Project for Fundamental Technology Researches of the Ministry of Education, Culture, Sports, Science and Technology, Japan.

  14. Green, yellow and bright red (In,Ga,Al)P-GaP diode lasers grown on high-index GaAs substrates

    Science.gov (United States)

    Ledentsov, N. N.; Shchukin, V. A.; Shernyakov, Yu. M.; Kulagina, M. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V.; Cherkashin, N. A.

    2017-02-01

    Low threshold current density (<400 A/cm2) injection lasing in (AlxGa1-x)0.5In0.5P-GaAs-based diodes down to the green spectral range (<570 nm) is obtained. The epitaxial structures are grown on high-index (611)A and (211)A GaAs substrates by metal-organic vapor phase epitaxy and contain tensile-strained GaP-enriched insertions aimed at preventing escape of the injected nonequilibrium electrons from the active region. Extended waveguide concept results in a vertical beam divergence with a full width at half maximum of 15o for (611)A substrates. The lasing at 569 nm is realized at 85 K. In the orange-red laser diode structure low threshold current density (200 A/cm2) in the orange spectral range (598 nm) is realized at 85 K. The latter devices demonstrate room temperature lasing at 628 nm at 2 kA/cm2 and a total power above 3W. The red laser diodes grown on (211)A substrates demonstrate vertically multimode lasing far field pattern indicating a lower optical confinement factor for the fundamental mode as compared to the devices grown on (611)A. However the temperature stability of the threshold current and the wavelength stability are significantly higher for (211)A-grown structures in agreement with the conduction band modeling data.

  15. Electron Traps in GaAs Grown by Molecular Beam Epitaxy on On-axis (100 and Off-axis Substrates

    Directory of Open Access Journals (Sweden)

    R. Sarmiento

    2003-06-01

    Full Text Available Deep level transient spectroscopy (DLTS was used to characterize the electron traps present in the bulkGaAs grown by molecular beam epitaxy (MBE on on-axis (100 and off-axis (4° towards the (111 Adirection substrates. Two electron traps were obtained for each sample having identical correspondingpeak locations in the DLTS spectra. The layer grown on the on-axis substrate has electron traps withactivation energies of EC–0.454 eV and EC–0.643 eV and capture cross-sections of 1.205 x 10-14 cm2 and3.88 x 10-15 cm2, respectively. The layer grown on the off-axis substrate has traps with activation energiesof EC–0.454 eV and EC–0.723 eV and capture cross-sections of 2.060 x 10-14 cm2 and 4.40 x 10-14 cm2.The electron traps are possibly the M4 (or EL3 and EL2 (or EB4 traps commonly found in GaAs layers.Due to the high trap concentrations obtained and to the non-uniform trap concentration profile, Asdesorption may be considerable during growth.

  16. Epitaxial growth of chalcopyrite CuInS2 films on GaAs (001) substrates by evaporation method with elemental sources

    International Nuclear Information System (INIS)

    Nozomu, Tsuboi; Satoshi, Kobayash; Nozomu, Tsuboi; Takashi, Tamogami

    2010-01-01

    Full text : Ternary chalcopyrite semiconductor CuInS 2 is one of the potential candidates for absorber layers in high-efficiency thin film solar cells due to its direct bandgap Eg of 1.5 eV, which matches with solar spectrum. However, CuInS 2 solar cells face the problem of lower solar conversion efficiency compared with Cu(InGa)Se 2 solar cells. Investigation of fundamental properties of CuInS 2 films is necessary to understand key issues for solar cell performance. Although in bulk CuInS 2 is known to crystallize into chalcopyrite (CH) structure, in thin film other structures such as Cu-Au (CA) and sphalerite (SP) structures may coexist. It was reported epitaxial growth of slightly Cu-rich CuInS 2 films with c-axis orientated CA only and/or with a mixture of a- and c-axes orientated CH structures on GaP (001) at substrate temperature of 500 degrees using the conventional evaporation method with three elemental sources. Successful growth of epitaxial CH structured CuInS 2 were observed for films grown on GaP at 570 degrees with slightly Cu-rich composition. In this paper, CuInS 2 films with various [Cu]/[In] ratios are grown on GaAs(001) substrates, and the composition range in terms of the [Cu]/[In] ratio where epitaxial films with CH structure grow and the structural qualities of the films are discussed in comparison with those on GaP substrates. Films with various ratios of [Cu]/[In]=0.8 ≤1.9 are grown at 500 degrees and 570 degrees using the evaporation system described in our previous reports. Regardless of the substrate temperature, noticeable X-ray diffraction (XRD) peaks of CH structured CuInS 2 phase are observed in slightly Cu-rich films. However, reflection high energy electron diffraction (RHEED) patterns of the slightly Cu-rich films grown at 570 degrees exhibit noticeable spots not only due to the CH structure but also due to the CA structure. The amount of the CA structure is considered to be small because of the absence of the XRD peaks of the CA

  17. Electron transport in nanometer GaAs structure under radiation exposure

    CERN Document Server

    Demarina, N V

    2002-01-01

    One investigates into effect of neutron and proton irradiation on electron transport in nanometer GaAs structures. Mathematical model takes account of radiation defects via introduction of additional mechanisms od scattering of carriers at point defects and disordered regions. To investigate experimentally into volt-ampere and volt-farad characteristics one used a structure based on a field-effect transistor with the Schottky gate and a built-in channel. Calculation results of electron mobility, drift rate of electrons, time of energy relaxation and electron pulse are compared with the experimental data

  18. Performance of Hughes GaAs concentrator cells under 1-MeV electron irradiation

    International Nuclear Information System (INIS)

    Curtis, H.B.; Swartz, C.K.

    1985-01-01

    Several Hughes gallium arsenide (GaAs) concentrator cells were exposed to 1-MeV electrons at fluences up to 1x10 to the 15th power electrons/sq cm. Performance data were taken after several fluences, at two temperatures, and at concentration levels from 1 to approx. 150x AMO. Data at 1 sun and 25 deg C were taken with an X-25 xenon-lamp solar simulator. Data at concentration were taken using a pulsed solar simulator with the assumption of a linear relationship between short-circuit current and irradiance. The cells are 5 by 5 mm with a 4-mm diameter illuminated area. 1 reference

  19. Nonlinear intersubband optical absorption of Si {delta}-doped GaAs under an electric field

    Energy Technology Data Exchange (ETDEWEB)

    Yildirim, Hasan; Tomak, Mehmet [Middle East Technical University, Department of Physics, Ankara 06531 (Turkey)

    2006-10-15

    We study the nonlinear intersubband optical absorption of a single Si {delta}-doped GaAs sheet placed in the middle of a GaAs quantum well and subjected to an electric field. The Schroedinger and Poisson equations are solved self-consistently for various electric field strengths. The self-consistent solutions provide us with the correct confining potential, the wave functions, the corresponding subband energies and the subband occupations. The nonlinear optical intersubband absorption spectra are discussed within the framework of the density matrix formulation for various electric field strengths, well widths, and sheet thicknesses in which Si atoms are distributed uniformly. We include both the depolarization and exciton shifts in calculations. The depolarization effect not only shifts the peak value but also makes the nonlinear absorption spectrum strongly asymmetric with the increasing intensity of the optical field. The blue-shift associated with the depolarization shift is decreased when the intensity is increased. The absorption line shape becomes more asymmetric at smaller well widths and thicker doping layers. The electric field restores the symmetry of the absorption line shape at larger well widths and thinner doping layers, but it decreases the peak value of the line shape. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Effects of Si doping on the strain relaxation of metamorphic (Al)GaInP buffers grown on GaAs substrates

    International Nuclear Information System (INIS)

    Li, K.L.; Dong, J.R.; Sun, Y.R.; Zeng, X.L.; Zhao, Y.M.; Yu, S.Z.; Zhao, C.Y.; Yang, H.

    2014-01-01

    We investigate the effects of Si doping on the strain relaxation of the compositionally step-graded (Al)GaInP buffers grown by metal-organic chemical vapor deposition on (0 0 1) GaAs substrates with different miscuts toward (1 1 1)A. It is found that in the 2° samples, high Si doping can reduce both the α and β dislocation densities by delaying and suppressing the formation of phase separation in the buffer. In contrast, in the 7° samples, Si dopants deteriorate the buffer quality through increasing the dislocation density accompanying with the tilt reduction along the [1 1 0] direction, and a striking feature, bunches of β dislocations away from the interfaces, is observed in the [1 1 0] cross-sectional transmission electron microscopy images. A cross-slip mechanism closely associated with the pinning effect of Si on α dislocation motion is proposed to explain the multiplication of β dislocations. These results indicate that selecting a moderate Si doping density and substrate miscut are critical for the design and fabrication of metamorphic optoelectronic devices.

  1. Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

    Science.gov (United States)

    Yao, Maoqing; Sheng, Chunyang; Ge, Mingyuan; Chi, Chun-Yung; Cong, Sen; Nakano, Aiichiro; Dapkus, P Daniel; Zhou, Chongwu

    2016-02-23

    Monolithic integration of III-V semiconductors with Si has been pursued for some time in the semiconductor industry. However, the mismatch of lattice constants and thermal expansion coefficients represents a large technological challenge for the heteroepitaxial growth. Nanowires, due to their small lateral dimension, can relieve strain and mitigate dislocation formation to allow single-crystal III-V materials to be grown on Si. Here, we report a facile five-step heteroepitaxial growth of GaAs nanowires on Si using selective area growth (SAG) in metalorganic chemical vapor deposition, and we further report an in-depth study on the twin formation mechanism. Rotational twin defects were observed in the nanowire structures and showed strong dependence on the growth condition and nanowire size. We adopt a model of faceted growth to demonstrate the formation of twins during growth, which is well supported by both a transmission electron microscopy study and simulation based on nucleation energetics. Our study has led to twin-free segments in the length up to 80 nm, a significant improvement compared to previous work using SAG. The achievements may open up opportunities for future functional III-V-on-Si heterostructure devices.

  2. Theoretical investigation of structural, mechanical and electronic properties of GaAs1-xNx alloys under ambient and high pressure

    Science.gov (United States)

    Li, Jian; Han, Xiuxun; Dong, Chen; Fan, Changzeng

    2017-12-01

    Using first-principles total energy calculations, we have studied the structural, mechanical and electronic properties of GaAs1-xNx ternary semiconductor alloys with the zinc-blende crystal structure over the whole nitrogen concentration range (with x from 0 to 1) within density functional theory (DFT) framework. To obtain the ideal band gap, we employ the semi-empirical approach called local density approximation plus the multi-orbital mean-field Hubbard model (LDA+U). The calculated results illustrate the varying lattice constants and band gap in GaAs1-xNx alloys as functions of the nitrogen concentration x. According to the pressure dependence of the lattice constants and volume, the higher N concentration alloy exhibits the better anti-compressibility. In addition, an increasing band gap is predicted under 20 GPa pressure for GaAs1-xNx alloys.

  3. Transformation kinetics of mixed polymeric substrates under ...

    African Journals Online (AJOL)

    Admin

    The residual biomasses of fungi used in industries to produce enzymes are stocked in landfill nowadays, but they could serve as inoculums for pretreatment. The aims of this study were (i) to determine the kinetics of the pretreatment under transitory conditions of a synthetic wastewater containing a mixture of starch and.

  4. Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100 and (311B GaAs Substrates

    Directory of Open Access Journals (Sweden)

    Shafi M

    2010-01-01

    Full Text Available Abstract Si-doped GaAs/AlGaAs multi-quantum wells structures grown by molecular beam epitaxy on (100 and (311B GaAs substrates have been studied by using conventional deep-level transient spectroscopy (DLTS and high-resolution Laplace DLTS techniques. One dominant electron-emitting level is observed in the quantum wells structure grown on (100 plane whose activation energy varies from 0.47 to 1.3 eV as junction electric field varies from zero field (edge of the depletion region to 4.7 × 106 V/m. Two defect states with activation energies of 0.24 and 0.80 eV are detected in the structures grown on (311B plane. The Ec-0.24 eV trap shows that its capture cross-section is strongly temperature dependent, whilst the other two traps show no such dependence. The value of the capture barrier energy of the trap at Ec-0.24 eV is 0.39 eV.

  5. Formation and reconstruction of Se nanoislands at the surface of thin epitaxial ZnSe layers grown on GaAs substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kozlovskiy, V. I.; Krivobok, V. S., E-mail: krivobok@lebedev.ru [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Kuznetsov, P. I.; Nikolaev, S. N.; Onistchenko, E. E.; Pruchkina, A. A.; Temiryazev, A. G. [Russian Academy of Sciences, Kotel’nikov Institute of Radio-Engineering and Electronics (Russian Federation)

    2016-05-15

    Strained epitaxial ZnSe layers are grown on GaAs substrates by the method of vapor-phase epitaxy from metal-organic compounds. It is found that Se nanoislands with a density of 10{sup 8} to 10{sup 9} cm{sup –2} are formed at the surface of such layers. It is established that an increase in the size of Se islands and a decrease in their density take place after completion of growth. Annealing in a H{sub 2} atmosphere at a temperature higher than 260°C leads to the disappearance of Se islands and to a decrease in the surface roughness. It is shown that annealing does not lead to deterioration of the structural perfection of the epitaxial ZnSe films; rather, annealing gives rise to a decrease in the intensity of impurity–defect luminescence and to an increase in the intensity of intrinsic radiation near the bottom of the exciton band.

  6. Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Plaza, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Abuin, M. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Mascaraque, A., E-mail: arantzazu.mascaraque@fis.ucm.es [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Gonzalez-Barrio, M.A. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Unidad Asociada IQFR(CSIC)-UCM, Madrid 28040 (Spain); Perez, L. [Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid (Spain); Instituto de Sistemas Optoelectronicos y Microtecnologia, Universidad Politecnica de Madrid, 28040 Madrid (Spain)

    2012-05-15

    Highlights: Black-Right-Pointing-Pointer Electrodeposition of Bi films on GaAs substrates with different orientations. Black-Right-Pointing-Pointer Ultra thin films - 50 nm - are continuous and smooth. Black-Right-Pointing-Pointer Bi always grows with (0 1 L) orientations. Black-Right-Pointing-Pointer Epitaxial growth onto As terminated surfaces. Black-Right-Pointing-Pointer Proposed model based on structural and chemical considerations. - Abstract: We report on the growth of thin bismuth films on GaAs substrates with different orientations by means of electrochemical deposition. Atomic force microscopy reveals that the films are continuous and exhibit low roughness when they are grown under the appropriate overpotential. {omega}-2{theta} X-ray diffraction scans only show reflections that can be indexed as (0 1 L), meaning that Bi grows onto GaAs only in combinations of the (0 0 1) and (0 1 0) orientations. The matching between the GaAs substrate and the Bi layer has been studied by asymmetric X-ray scans, finding that Bi grows epitaxially on GaAs(1 1 0) and GaAs(1 1 1)B, both As-terminated surfaces. We explain these results by structural and chemical considerations.

  7. Growth and characteristics of p-type doped GaAs nanowire

    Science.gov (United States)

    Li, Bang; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2018-05-01

    The growth of p-type GaAs nanowires (NWs) on GaAs (111) B substrates by metal-organic chemical vapor deposition (MOCVD) has been systematically investigated as a function of diethyl zinc (DEZn) flow. The growth rate of GaAs NWs was slightly improved by Zn-doping and kink is observed under high DEZn flow. In addition, the I–V curves of GaAs NWs has been measured and the p-type dope concentration under the II/III ratio of 0.013 and 0.038 approximated to 1019–1020 cm‑3. Project supported by the National Natural Science Foundation of China (Nos. 61376019, 61504010, 61774021) and the Fund of State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), China (Nos. IPOC2017ZT02, IPOC2017ZZ01).

  8. Some Aspects of the RHEED Behavior of Low-Temperature GaAs Growth

    International Nuclear Information System (INIS)

    Nemcsics, A.

    2005-01-01

    The reflection high-energy electron diffraction (RHEED) behavior manifested during MBE growth on a GaAs(001) surface under low-temperature (LT) growth conditions is examined in this study. RHEED and its intensity oscillations during LT GaAs growth exhibit some particular behavior. The intensity, phase, and decay of the oscillations depend on the beam equivalent pressure (BEP) ratio and substrate temperature, etc. Here, the intensity dependence of RHEED behavior on the BEP ratio, substrate temperature, and excess of As content in the layer are examined. The change in the decay constant of the RHEED oscillations is also discussed

  9. Exploration of Gas Discharges with GaAs, GaP and ZnSe Electrodes Under Atmospheric Pressure

    Science.gov (United States)

    Kurt, H. Hilal

    2018-03-01

    This work reports on the electrical and optical characterization of the atmospheric pressure glow discharge regimes for different semiconductor electrodes made of GaAs, GaP and ZnSe. The discharge cell is driven by DC feeding voltages at a wide pressure range of 0.66-120 kPa in argon and air media for different interelectrode gaps. The discharge phenomena including different stages of discharges such as glow and Townsend breakdown have been examined. In addition, the infrared sensitivities of the semiconducting materials are evaluated in the micro-discharge cell and discharge light emission measurements have been performed. The qualities of the semiconducting electrode samples can be determined by seeking the homogeneity of the discharge light emission for the optoelectronic device applications. Operation of optical devices under atmospheric pressures gives certain advantages for manufacturing of the devices including the material processing and surface treatment procedures. Besides, finite element analyses of the overall experimental system have been performed for the abovementioned semiconductors. The electron densities and potential patterns have been determined on the discharge cell plane between the electrodes. The findings have proven that the electron densities along the plasma cell depend on both the semiconductor type and plasma parameters.

  10. Banana peel: A novel substrate for cellulase production under solid ...

    African Journals Online (AJOL)

    These results indicated that banana peel provided necessary nutrients for cell growth and cellulase synthesis. It can be used as a potential substrate for cellulase production by T. viride GIM 3.0010 under solid-state fermentation. To the best of our knowledge, this is the first report on cellulase production using banana peel.

  11. Gallium loading of gold seed for high yield of patterned GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Boulanger, J. P.; Chia, A. C. E.; LaPierre, R. R., E-mail: lapierr@mcmaster.ca [Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7 (Canada)

    2014-08-25

    A method is presented for maximizing the yield and crystal phase purity of vertically aligned Au-assisted GaAs nanowires grown with an SiO{sub x} selective area epitaxy mask on GaAs (111)B substrates. The nanowires were grown by the vapor-liquid-solid (VLS) method in a gas source molecular beam epitaxy system. During annealing, Au VLS seeds will alloy with the underlying GaAs substrate and collect beneath the SiO{sub x} mask layer. This behavior is detrimental to obtaining vertically aligned, epitaxial nanowire growth. To circumvent this issue, Au droplets were pre-filled with Ga assuring vertical yields in excess of 99%.

  12. Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

    International Nuclear Information System (INIS)

    Dinh Nhu Thao

    2008-01-01

    We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

  13. Structural and electrical properties of high-quality 0.41 μm-thick InSb films grown on GaAs (1 0 0) substrate with InxAl1−xSb continuously graded buffer

    International Nuclear Information System (INIS)

    Shin, Sang Hoon; Song, Jin Dong; Lim, Ju Young; Koo, Hyun Cheol; Kim, Tae Geun

    2012-01-01

    High-quality InSb was grown on a GaAs (1 0 0) substrate with an InAlSb continuously graded buffer (CGB). The temperatures of In, Al K-cells and substrate were modified during the growth of InAlSb CGB. The cross-section TEM image reveals that the defects due to lattice-mismatch disappear near lateral structures in CGB. The measured electron mobility of 0.41 μm-thick InSb was 46,300 cm 2 /Vs at 300 K. These data surpass the electron mobility of state-of-the-art InSb grown by other methods with similar thickness of InSb.

  14. Polarity influence on the indentation punching of thin {111} GaAs foils at elevated temperatures

    International Nuclear Information System (INIS)

    Patriarche, G; Largeau, L; Riviere, J P; Bourhis, E Le

    2005-01-01

    Thin {111} GaAs substrates were deformed by a Vickers indenter at 350 deg. C-370 deg. C under loads ranging between 0.4 and 1.9 N. Optical microscopy and interferometry were used to observe the indented and opposite faces of the thin foils and hence to investigate the plastic flow through the samples. Attention was paid to the polarity (A or B) of the specimen surface, as GaAs is known to show a large difference between α and β dislocations mobilities. A model considering the influence of polarity is proposed to describe the material flow throughout thin samples

  15. Modeling and Design of Graphene GaAs Junction Solar Cell

    Directory of Open Access Journals (Sweden)

    Yawei Kuang

    2015-01-01

    Full Text Available Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work function and transmittance, and n-type doping concentration in GaAs. The results show that the most effective region for photo photogenerated carriers locates very close to the interface under light illumination. Comprehensive technological design for junction yields a significant improvement of power conversion efficiency from 0.772% to 2.218%. These results are in good agreement with the reported experimental work.

  16. Photoluminescence spectra of CdTe epitaxial layers prepared by chemical vapor deposition from organometallic compounds on GaAs substrate

    International Nuclear Information System (INIS)

    Batmanov, S.M.; Liverko, V.N.; Moiseev, A.N.; Sennikov, P.G.; Shakarov, M.A.

    1989-01-01

    Spectra of low-temperature photoluminescence (LTP) of CdTe epitaxial layers on GaAs, prepared according to reaction between dimethyl cadmium and diethyl tellurium of different degrees of purity, have been investigated. It is shown that LPT spectra are guite sensitive to the degree of purity of the organometallic compounds (OMC), hence, when passing to less pure OMC in LTP spectra of the layers free exciton recombination lines are not resolved, recombination lines of bound excitons are broadened, and in the long-wave region a band of ''self-activated'' luminescence due to recombination of the complex donor-cadmium vacancy is recorded

  17. Survival of heterotrophic bacteria in water environment under substrate deficiency

    International Nuclear Information System (INIS)

    Toth, D.

    1989-01-01

    The relationship between metabolic changes and survival of bacteria in the water environment under substrate deficiency was studied. The main factors supporting cell survival were cryptic growth, utilization of endogenous reserve substances and reorganization of metabolic activities. Based on the utilization of cell-free extract or lysates from dead bacteria, an Enterobacter aerogenes cell suspension yielded 50% more colonies. Metabolic processes of starved heterotrophic bacteria changed markedly and became stabilized at a lower level depending on species involved. The rate of utilization of endogenous reserve substances as indicated by endogenous respiration was related to the rate of cell mortality. Of the test bacteria, Pseudomonas fluorescens showed the lowest rates of endogenous respiration and mortality while in Enterobacter aerogenes these two rates were the highest. (author). 3 figs., 2 tabs.., 16 refs

  18. Nonlinear optical rectification and second and third harmonic generation in GaAs {delta}-FET systems under hydrostatic pressure

    Energy Technology Data Exchange (ETDEWEB)

    Martinez-Orozco, J.C. [Unidad Academica de Fisica, Universidad Autonoma de Zacatecas, 98060 Zacatecas, ZAC (Mexico); Mora-Ramos, M.E. [Facultad de Ciencias, Universidad Autonoma del Estado de Morelos, Ave. Universidad 1001, CP 62209 Cuernavaca, Morelos (Mexico); Duque, C.A., E-mail: cduque_echeverri@yahoo.es [Instituto de Fisica, Universidad de Antioquia, AA 1226, Medellin (Colombia)

    2012-02-15

    The GaAs n-type delta-doped field effect transistor is proposed as a source for nonlinear optical responses such as second order rectification and second and third harmonic generation. Particular attention is paid to the effect of hydrostatic pressure on these properties, related with the pressure-induced modifications of the energy level spectrum. The description of the one-dimensional potential profile is made including Hartree and exchange and correlation effects via a Thomas-Fermi-based local density approximation. The allowed energy levels are calculated within the effective mass and envelope function approximations by means of an expansion over an orthogonal set of infinite well eigenfunctions. The results for the coefficients of nonlinear optical rectification and second and third harmonic generation are reported for several values of the hydrostatic pressure. - Highlights: Black-Right-Pointing-Pointer GaAs n-type delta-doped field effect transistor. Black-Right-Pointing-Pointer NOR and SHG are enhanced as a result of the pressure. Black-Right-Pointing-Pointer THG is quenched as a result of the pressure. Black-Right-Pointing-Pointer The zero pressure situation is the best scenario for the THG.

  19. Directional growth of Ge on GaAs at 175 deg. C using plasma-generated nanocrystals

    International Nuclear Information System (INIS)

    Johnson, Erik V.; Roca i Cabarrocas, Pere; Patriarche, Gilles

    2008-01-01

    We demonstrate the directional growth of Ge on a GaAs (100) wafer at 175 deg. C using radio-frequency plasma-enhanced chemical vapor deposition at 13.56 MHz under conditions where nanocrystals are the primary contributors to film growth. High resolution transmission electron microscopy (HRTEM) verifies the transport of plasma-formed nanocrystals to the substrate surface where they are initially mobile. Furthermore, cross-sectional HRTEM images show directional growth on the GaAs wafer, wherein the incident Ge nanocrystals have adopted the orientation of the underlying lattice

  20. GaAs/Ge/Si epitaxial substrates: Development and characteristics

    Directory of Open Access Journals (Sweden)

    Yury Buzynin

    2017-01-01

    Full Text Available We developed high quality 2-inch GaAs/Ge/Si (100 epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2∙105 cm-2 and the surface RMS roughness value was under 1 nm.

  1. Scanning tunneling spectroscopy of CdSe nanocrystals covalently bound to GaAs

    DEFF Research Database (Denmark)

    Walzer, K.; Marx, E.; Greenham, N.C.

    2003-01-01

    We present scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) measurements of CdSe nanocrystals covalently attached to doped GaAs substrates using monolayers of 1,6-hexanedithiol. STM measurements showed the formation of stable, densely packed, homogeneous monolayers...... and the bands in the substrate which are bent under the influence of the strong electric field between the closely separated semiconductor substrate and STM tip. The polarity of the forward bias direction is determined by the alignment of the CdSe electronic states with the semiconductor bands. (C) 2003...

  2. Acclimatization and growth of ornamental pineapple seedlings under organic substrates

    Directory of Open Access Journals (Sweden)

    Ronan Carlos Colombo

    2017-09-01

    Full Text Available The in vitro propagation techniques are commonly used to produce ornamental pineapple seedlings in commercial scale, aiming to attend the growers with genetic and sanitary quality seedlings. However, the choice of the ideal substrate is essential for the acclimatization and growth stage of the seedlings propagated by this technique, since some substrates can increase the seedling mortality and/or limit the seedling growth due to its physical and chemical characteristics. Thus, the aim of this study was to evaluate the acclimatization of ornamental pineapple [Ananas comosus (L. Merr. var. ananassoides (Baker Coppens & Leal] on different substrates. Seedlings with approximately seven centimeters, obtained from in vitro culture, were transplanted into styrofoam trays filled with the following substrates: sphagnum; semi-composed pine bark; carbonized rice husk; sphagnum + semicomposed pine bark; sphagnum + carbonized rice husk; and semi-composed pine bark + carbonized rice husk. Each treatment was replicated five times using 10 plants. At 180 days, there were evaluated the following variables: survival percentage, plant height, number of leaves, leaf area, largest root length, and shoot and root dry matter. The substrate semi-composed pine bark + carbonized rice husk presented the lowest mean (62% for survival percentage. The semi-composed pine bark and semi-composed pine bark + carbonized rice husk treatments presented significant increments in some evaluated biometric characteristics. The semi-composed pine bark is the most favorable substrate for the A. comosus var. ananassoids acclimatization.

  3. Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates

    Science.gov (United States)

    Özden, Selin; Koc, Mumin Mehmet

    2018-03-01

    CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force microscopy and Scanning electron microscopy (SEM) before and after each treatment. The Energy Dispersive X-Ray apparatus of SEM was used to characterize the chemical composition. Untreated CdTe films show smooth surface characteristics with root mean square (RMS) roughnesses of 1.18-3.89 nm. The thicknesses of the CdTe layers formed were calculated via FTIR spectrometry and obtained by ex situ spectroscopic ellipsometry. Raman spectra were obtained for various temperatures. Etch pit densities (EPD) were measured, from which it could be seen that EPD changes between 1.7 × 108 and 9.2 × 108 cm-2 depending on the concentration of the Everson etch solution and treatment time. Structure, shape and depth of pits resulting from each etch pit implementation were also evaluated. Pit widths varying between 0.15 and 0.71 µm with heights varying between 2 and 80 nm were observed. RMS roughness was found to vary by anything from 1.56 to 26 nm.

  4. Terahertz radiation in In{sub 0.38}Ga{sub 0.62}As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

    Energy Technology Data Exchange (ETDEWEB)

    Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru; Khabibullin, R. A.; Yachmenev, A. E.; Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Ilyakov, I. E.; Shishkin, B. V.; Akhmedzhanov, R. A. [Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)

    2017-04-15

    The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In{sub 0.38}Ga{sub 0.62}As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10{sup –5} at a rather low optical fluence of ~40 μJ/cm{sup 2}, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.

  5. The development of integrated chemical microsensors in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    CASALNUOVO,STEPHEN A.; ASON,GREGORY CHARLES; HELLER,EDWIN J.; HIETALA,VINCENT M.; BACA,ALBERT G.; HIETALA,S.L.

    1999-11-01

    Monolithic, integrated acoustic wave chemical microsensors are being developed on gallium arsenide (GaAs) substrates. With this approach, arrays of microsensors and the high frequency electronic components needed to operate them reside on a single substrate, increasing the range of detectable analytes, reducing overall system size, minimizing systematic errors, and simplifying assembly and packaging. GaAs is employed because it is both piezoelectric, a property required to produce the acoustic wave devices, and a semiconductor with a mature microelectronics fabrication technology. Many aspects of integrated GaAs chemical sensors have been investigated, including: surface acoustic wave (SAW) sensors; monolithic SAW delay line oscillators; GaAs application specific integrated circuits (ASIC) for sensor operation; a hybrid sensor array utilizing these ASICS; and the fully monolithic, integrated SAW array. Details of the design, fabrication, and performance of these devices are discussed. In addition, the ability to produce heteroepitaxial layers of GaAs and aluminum gallium arsenide (AlGaAs) makes possible micromachined membrane sensors with improved sensitivity compared to conventional SAW sensors. Micromachining techniques for fabricating flexural plate wave (FPW) and thickness shear mode (TSM) microsensors on thin GaAs membranes are presented and GaAs FPW delay line and TSM resonator performance is described.

  6. Highly uniform zinc blende GaAs nanowires on Si(111) using a controlled chemical oxide template

    Science.gov (United States)

    Li Tan, Siew; Genuist, Yann; den Hertog, Martien I.; Bellet-Amalric, Edith; Mariette, Henri; Pelekanos, Nikos T.

    2017-06-01

    GaAs-based nanowires (NWs) can be grown without extrinsic catalyst using the Ga-assisted vapor-liquid-solid method in an epitaxy reactor, on Si(111) substrates covered with native oxide. Despite its wide use, the conventional method fails to provide a good control over uniformity, reproducibility, and yield of vertical NWs. The nucleation of GaAs NWs is very sensitive to the properties of the native oxide such as chemical composition, roughness and porosity. Consequently, samples grown under the same conditions on Si(111) substrates from different manufacturing batches often produce dramatically different growth results. In order to remove the dependence on wafer batch, a controlled chemical oxidation process is developed to replace the native oxide on Si(111) substrate with a reproducible chemical oxide. A high yield (exceeding 90%) of vertical GaAs NWs is achieved with excellent uniformity on chemical oxide-covered substrate. As an added advantage, the crystalline quality is significantly improved over that of GaAs NWs grown on native oxide-covered substrate, and pure zinc blende crystal structure can be achieved with minimal defects. In addition, the chemical oxide can be used as a template for producing different combinations of NW densities and sizes in parallel on the same wafer using the same growth conditions.

  7. The role of proximity caps during the annealing of UV-ozone oxidized GaAs

    Science.gov (United States)

    Ghosh, S. C.; Biesinger, M. C.; LaPierre, R. R.; Kruse, P.

    2007-06-01

    This study provides a deeper insight into the chemistry and physics of the common engineering practice of using a proximity cap, while annealing compound semiconductors such as GaAs. We have studied the cases of a GaAs proximity cap, a Si proximity cap, and no proximity cap. Using x-ray photoelectron spectroscopy, it has been found that annealing increases the gallium to arsenic ratio in the oxide layer in all cases. During the annealing of UV-ozone oxidized GaAs, it has been observed that GaAs proximity caps also serve as a sacrificial layer to accelerate the desorption of oxide species. In all cases surface deterioration due to pit formation has been observed, and the depth of pits is found to depend on the effective role played by the capping material. Energy dispersive x-ray analysis provides additional evidence that pits mainly consist of elemental As and gallium oxide, with most of the elemental As situated at the pit-substrate interface. Deposition of a thin layer of gold and subsequent annealing to 500°C for 300s under different capping conditions shows the use of a proximate cap to be practically insignificant in annealing Au deposited films.

  8. High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

    Science.gov (United States)

    Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

    2015-09-16

    Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

  9. Conductive stability of graphene on PET and glass substrates under blue light irradiation

    Science.gov (United States)

    Cao, Xueying; Liu, Xianming; Li, Xiangdi; Lei, Xiaohua; Chen, Weimin

    2018-01-01

    Electrical properties of graphene transparent conductive film under visible light irradiation are investigated. The CVD-grown graphene on Polyethylene Terephthalate (PET) and glass substrates for flexible and rigid touch screen display application are chosen for research. The resistances of graphene with and without gold trichloride (AuCl3) doping are measured in vacuum and atmosphere environment under blue light irradiation. Results show that the conductivities of all samples change slowly under light irradiation. The change rate and degree are related to the substrate material, doping, environment and lighting power. Graphene on flexible PET substrate is more stable than that on rigid glass substrate. Doping can improve the electrical conductivity but induce instability under light irradiation. Finally, the main reason resulting in the graphene resistance slowly increasing under blue light irradiation is analyzed.

  10. Hydrolysis of particulate substrate by activated sludge under aerobic, anoxic and anaerobic conditions

    DEFF Research Database (Denmark)

    Henze, Mogens; Mladenovski, C.

    1991-01-01

    An investigation of hydrolysis of particulate organic substrate by activated sludge has been made. Raw municipal wastewater was used as substrate. It was mixed with activated sludge from a high loaded activated sludge plant with pure oxygen aeration. During 4 days batch experiments under aerobic......, anoxic and anaerobic conditions, the hydrolysis was following through the production of ammonia. The hydrolysis rate of nitrogeneous compounds is significantly affected by the electron donor available. The rate is high under aerobic conditions, medium under anaerobic conditions and low under anoxic...... conditions. The ratio between the hydrolysis rates under aerobic and under anoxic conditions are very similar to the respiration rates measured as electron equivalents....

  11. Evaluation of organic Substrates for wheat production under rainfed conditions

    International Nuclear Information System (INIS)

    Muhammad, S.; Tanveer, S.K.; Anjum, A.S.; Javed, A.; Ullah, M.A.

    2013-01-01

    A study was carried out to evaluate the effect of different organic amendments and bio-fertilisers on organic wheat crop at National Agricultural Research Center (NARC), Islamabad during the year 2008-2009. Randomised Complete Block Design (RCBD) with four replications was used. The soil at NARC is slightly alkaline. Organic matter ranges from 0.31-2.50 % in the surface soils and 0.15-2.50 % in sub-soils. Most soils at NARC have low soil organic matter content. The treatments included (a) organic fertilizers 3: 16:1.5 (N:P:K), 15kg N, 85kg P/sub 2/O/sub 5/and 7kg K per acre),(b) organic fertilizers (NPK),15kg N, 85kg P/sub 2/O/sub 5/and 7gK+ Humic acid (8/acre as basel dose and foliar spray), (c) compost (well decomposed and fermented with yeast mixed with molasses) 1000kg/acre (1.5% N,1.2% P/sub 2/ O/sub 5/ and 0.8% K), (d) a control. Different organic products including bio-trace, humic acid (granulated form, i.e. lignatic coal treated with 10% potassium hydroxide) and humic acid alkaline solution in water were applied in the form of foliar spray on the crop (treatments 1 and 3) at six leaves stage, after 1.5 months and at spike emergence stage. The use of organic fertiliser with compost alone or in combination increased growth parameters as well as wheat yield, with maximum biomass (5,788kg/ha). Minimum biomass was recorded in the control treatment. The soil chemical, physical and biological properties were improved with addition of all types of organic substrates. The soil quality relates with its characteristics and microbial dynamism. (author)

  12. Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation

    Energy Technology Data Exchange (ETDEWEB)

    Biswas, Pranab; Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Halder, Nripendra N. [Advanced Technology Development Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Kundu, Souvik [School of Electrical Engineering and Computer Science, Oregon State University, 1148 Kelley Engineering Center, Corvallis, OR 97331–5501 (United States); Shripathi, T.; Gupta, M. [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452 001 (India)

    2014-05-15

    The diffusion behavior of arsenic (As) and gallium (Ga) atoms from semi-insulating GaAs (SI-GaAs) into ZnO films upon post-growth annealing vis-à-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy. The films, annealed at 600 ºC and 700 ºC showed p-type conductivity with a hole concentration of 1.1 × 10{sup 18} cm{sup −3} and 2.8 × 10{sup 19} cm{sup −3} respectively, whereas those annealed at 800 ºC showed n-type conductivity with a carrier concentration of 6.5 × 10{sup 16} cm{sup −3}. It is observed that at lower temperatures, large fraction of As atoms diffused from the SI-GaAs substrates into ZnO and formed acceptor related complex, (As{sub Zn}–2V{sub Zn}), by substituting Zn atoms (As{sub Zn}) and thereby creating two zinc vacancies (V{sub Zn}). Thus as-grown ZnO which was supposed to be n-type due to nonstoichiometric nature showed p-type behavior. On further increasing the annealing temperature to 800 ºC, Ga atoms diffused more than As atoms and substitute Zn atoms thereby forming shallow donor complex, Ga{sub Zn}. Electrons from donor levels then compensate the p-type carriers and the material reverts back to n-type. Thus the conversion of carrier type took place due to charge compensation between the donors and acceptors in ZnO and this compensation is the possible origin of anomalous conduction in wide band gap materials.

  13. Anomalous diffusion of Ga and As from semi-insulating GaAs substrate into MOCVD grown ZnO films as a function of annealing temperature and its effect on charge compensation

    Directory of Open Access Journals (Sweden)

    Pranab Biswas

    2014-05-01

    Full Text Available The diffusion behavior of arsenic (As and gallium (Ga atoms from semi-insulating GaAs (SI-GaAs into ZnO films upon post-growth annealing vis-à-vis the resulting charge compensation was investigated with the help of x-ray photoelectron spectroscopy (XPS and secondary ion mass spectroscopy. The films, annealed at 600 ºC and 700 ºC showed p-type conductivity with a hole concentration of 1.1 × 1018 cm−3 and 2.8 × 1019 cm−3 respectively, whereas those annealed at 800 ºC showed n-type conductivity with a carrier concentration of 6.5 × 1016 cm−3. It is observed that at lower temperatures, large fraction of As atoms diffused from the SI-GaAs substrates into ZnO and formed acceptor related complex, (AsZn–2VZn, by substituting Zn atoms (AsZn and thereby creating two zinc vacancies (VZn. Thus as-grown ZnO which was supposed to be n-type due to nonstoichiometric nature showed p-type behavior. On further increasing the annealing temperature to 800 ºC, Ga atoms diffused more than As atoms and substitute Zn atoms thereby forming shallow donor complex, GaZn. Electrons from donor levels then compensate the p-type carriers and the material reverts back to n-type. Thus the conversion of carrier type took place due to charge compensation between the donors and acceptors in ZnO and this compensation is the possible origin of anomalous conduction in wide band gap materials.

  14. Structural, magnetic, and lattice-dynamical interface properties of epitactical iron films on InAs(001) and GaAs(001) substrates; Strukturelle, magnetische und gitterdynamische Grenzflaecheneigenschaften von epitaktischen Eisenfilmen auf InAs(001)- und GaAs(001)-Substraten

    Energy Technology Data Exchange (ETDEWEB)

    Peters, Robert

    2009-07-14

    In this thesis the structure, magnetism and interface properties of ferromagnet-semiconductor hybrid structures were investigated. The main goal of this thesis was to obtain information on physical properties at the interface between a ferromagnetic metal and a III-V semiconductor (SC). For this purpose Fe films that serve as ferromagnetic contacts were deposited in ultrahigh vacuum (UHV) on InAs(001) and GaAs(001) substrates, respectively, and investigated. Both systems are interesting model systems with respect to electrical spin injection from a ferromagnetic metal into a semiconductor. In order for spin injection to occur, it is known that a Schottky barrier must form at the Fe/SC interface. Film growth and film structure were investigated in-situ in UHV by electron diffraction (RHEED) and ex-situ by X-ray diffraction. For determining the magnetic properties {sup 57}Fe conversion electron Moessbauer spectroscopy (CEMS) combines with {sup 57}Fe probe-layer technique was employed at different temperatures. Further, the partial Fe phonon density of states (PDOS) at the Fe/InAs (001) interface was determined by nuclear resonant inelastic X-ray scattering (NRIXS) from a {sup 57}Fe probe-layer. The CEM spectra (at room temperature) provided relatively high values of the average hyperfine magnetic field of left angle B{sub hf} right angle {proportional_to} 27 T and of the most-probable hyperfine magnetic field of B{sub hf,} {sub peak} {proportional_to} 30 T. This provides evidence for relativ high average Fe magnetic moments of {proportional_to} 1.8 {mu}{sub B}. The partial Fe phonon density of states (PDOS) at the Fe/InAs(001) interface is remarkably modified as compared to that of bulk bcc Fe. Using magnetometry and {sup 57}Fe CEMS, a strong temperature dependent magnetization directions was observed for Fe/Tb multilayers on InAs(001). Furthermore it is shown that such Fe/Tb multilayers on p-InAs(001) with perpendicular spin texture are useful as potential

  15. Super-Lattice Light Emitting Diodes (SLEDS) on GaAs

    Science.gov (United States)

    2016-03-31

    material [5]. Even after wafer distributors began selling GaSb substrates, semi- insulating GaSb and InAs substrates were, and are, not available for MBE... driver circuits on the front side, and another where LED array wafers are wafer bonded with RIIC wafers. If a successful approach can be reached a...this work, we describe two alternative approaches where LED arrays are grown on the backside of GaAs substrates with prefabricated GaAs driver

  16. Some optical and electron microscope comparative studies of excimer laser-assisted and nonassisted molecular-beam epitaxically grown thin GaAs films on Si

    Science.gov (United States)

    Lao, Pudong; Tang, Wade C.; Rajkumar, K. C.; Guha, S.; Madhukar, A.; Liu, J. K.; Grunthaner, F. J.

    1990-01-01

    The quality of GaAs thin films grown via MBE under pulsed excimer laser irradiation on Si substrates is examined in both laser-irradiated and nonirradiated areas using Raman scattering, Rayleigh scattering, and by photoluminescence (PL), as a function of temperature, and by TEM. The temperature dependence of the PL and Raman peak positions indicates the presence of compressive stress in the thin GaAs films in both laser-irradiated and nonirradiated areas. This indicates incomplete homogeneous strain relaxation by dislocations at the growth temperature. The residual compressive strain at the growth temperature is large enough such that even with the introduction of tensile strain arising from the difference in thermal expansion coefficients of GaAs and Si, a compressive strain is still present at room temperature for these thin GaAs/Si films.

  17. Variations in first principles calculated defect energies in GaAs and ...

    Indian Academy of Sciences (India)

    In particular, we have compared a large set of computed energies and selected the most appropriate values. Then, in the context of GaAs material quality, we investigated the impact of errors in calculation of formation energies on the performance of the GaAs substrate for device fabrication. We find that in spite of the errors ...

  18. Thin-film GaAs epitaxial life-off solar cells for space applications

    NARCIS (Netherlands)

    Schermer, J.J.; Mulder, P.; Bauhuis, G.J.; Larsen, P.K.; Oomen, G.; Bongers, E.

    2005-01-01

    In the present work the space compatibility of thin-film GaAs solar cells is studied. These cells are separated from their GaAs substrate by the epitaxial lift-off (ELO) technique and mounted behind a CMG cover glass which at the same time serves as a stable carrier for the thin film cells. In the

  19. Evaluating the Atrial Myopathy Underlying Atrial Fibrillation: Identifying the Arrhythmogenic and Thrombogenic Substrate

    Science.gov (United States)

    Goldberger, Jeffrey J.; Arora, Rishi; Green, David; Greenland, Philip; Lee, Daniel C.; Lloyd-Jones, Donald M.; Markl, Michael; Ng, Jason; Shah, Sanjiv J.

    2015-01-01

    Atrial disease or myopathy forms the substrate for atrial fibrillation (AF) and underlies the potential for atrial thrombus formation and subsequent stroke. Current diagnostic approaches in patients with AF focus on identifying clinical predictors with evaluation of left atrial size by echocardiography serving as the sole measure specifically evaluating the atrium. Although the atrial substrate underlying AF is likely developing for years prior to the onset of AF, there is no current evaluation to identify the pre-clinical atrial myopathy. Atrial fibrosis is one component of the atrial substrate that has garnered recent attention based on newer MRI techniques that have been applied to visualize atrial fibrosis in humans with prognostic implications regarding success of treatment. Advanced ECG signal processing, echocardiographic techniques, and MRI imaging of fibrosis and flow provide up-to-date approaches to evaluate the atrial myopathy underlying AF. While thromboembolic risk is currently defined by clinical scores, their predictive value is mediocre. Evaluation of stasis via imaging and biomarkers associated with thrombogenesis may provide enhanced approaches to assess risk for stroke in patients with AF. Better delineation of the atrial myopathy that serves as the substrate for AF and thromboembolic complications might improve treatment outcomes. Furthermore, better delineation of the pathophysiologic mechanisms underlying the development of the atrial substrate for AF, particularly in its earlier stages, could help identify blood and imaging biomarkers that could be useful to assess risk for developing new onset AF and suggest specific pathways that could be targeted for prevention. PMID:26216085

  20. Arbuscular Mycorrhiza Improves Substrate Hydraulic Conductivity in the Plant Available Moisture Range Under Root Growth Exclusion.

    Science.gov (United States)

    Bitterlich, Michael; Franken, Philipp; Graefe, Jan

    2018-01-01

    Arbuscular mycorrhizal fungi (AMF) proliferate in soils and are known to affect soil structure. Although their contribution to structure is extensively investigated, the consequences of those processes for soil water extractability and transport has, so far, gained surprisingly little attention. Therefore we asked, whether AMF can affect water retention and unsaturated hydraulic conductivity under exclusion of root ingrowth, in order to minimize plant driven effects. We carried out experiments with tomato inoculated with Rhizoglomus irregulare in a soil substrate with sand and vermiculite that created variation in colonization by mixed pots with wild type (WT) plants and mycorrhiza resistant (RMC) mutants. Sampling cores were introduced and used to assess substrate moisture retention dynamics and modeling of substrate water retention and hydraulic conductivity. AMF reduced the saturated water content and total porosity, but maintained air filled porosity in soil spheres that excluded root ingrowth. The water content between field capacity and the permanent wilting point (6-1500 kPa) was only reduced in mycorrhizal substrates that contained at least one RMC mutant. Plant available water contents correlated positively with soil protein contents. Soil protein contents were highest in pots that possessed the strongest hyphal colonization, but not significantly affected. Substrate conductivity increased up to 50% in colonized substrates in the physiologically important water potential range between 6 and 10 kPa. The improvements in hydraulic conductivity are restricted to substrates where at least one WT plant was available for the fungus, indicating a necessity of a functional symbiosis for this effect. We conclude that functional mycorrhiza alleviates the resistance to water movement through the substrate in substrate areas outside of the root zone.

  1. Arbuscular Mycorrhiza Improves Substrate Hydraulic Conductivity in the Plant Available Moisture Range Under Root Growth Exclusion

    Directory of Open Access Journals (Sweden)

    Michael Bitterlich

    2018-03-01

    Full Text Available Arbuscular mycorrhizal fungi (AMF proliferate in soils and are known to affect soil structure. Although their contribution to structure is extensively investigated, the consequences of those processes for soil water extractability and transport has, so far, gained surprisingly little attention. Therefore we asked, whether AMF can affect water retention and unsaturated hydraulic conductivity under exclusion of root ingrowth, in order to minimize plant driven effects. We carried out experiments with tomato inoculated with Rhizoglomus irregulare in a soil substrate with sand and vermiculite that created variation in colonization by mixed pots with wild type (WT plants and mycorrhiza resistant (RMC mutants. Sampling cores were introduced and used to assess substrate moisture retention dynamics and modeling of substrate water retention and hydraulic conductivity. AMF reduced the saturated water content and total porosity, but maintained air filled porosity in soil spheres that excluded root ingrowth. The water content between field capacity and the permanent wilting point (6–1500 kPa was only reduced in mycorrhizal substrates that contained at least one RMC mutant. Plant available water contents correlated positively with soil protein contents. Soil protein contents were highest in pots that possessed the strongest hyphal colonization, but not significantly affected. Substrate conductivity increased up to 50% in colonized substrates in the physiologically important water potential range between 6 and 10 kPa. The improvements in hydraulic conductivity are restricted to substrates where at least one WT plant was available for the fungus, indicating a necessity of a functional symbiosis for this effect. We conclude that functional mycorrhiza alleviates the resistance to water movement through the substrate in substrate areas outside of the root zone.

  2. On the Correlation Between the Self-Organized Island Pattern and Substrate Elastic Anisotropy

    Science.gov (United States)

    2007-04-01

    energy field Estr on the surface of substrates Iso 001, GaAs 001, GaAs 111, and GaAs 113 due to a buried island is plotted. Furthermore, Fig. 1...distribution where the height is proportional to the number of adatoms per unit area: on the surface of GaAs with strain energy Estr of Iso 001 a, with...anisotropic strain energy Estr of GaAs 001 b, GaAs 111 c, and GaAs 113 d. Different island orderings and patterns red dashed lines

  3. Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

    Science.gov (United States)

    Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

    2012-09-12

    By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

  4. Influence of substrate surfaces on the growth of organic films

    Science.gov (United States)

    Das, A.; Salvan, G.; Kampen, T. U.; Hoyer, W.; Zahn, D. R. T.

    2003-05-01

    3,4,9,10-Perylene tetracarboxylic dianhydride (PTCDA) films were grown by organic molecular beam deposition (OMBD) under UHV conditions on hydrogen terminated Si(1 0 0) and sulphur passivated GaAs(1 0 0) surfaces. X-ray diffraction (XRD), X-ray reflectivity (XRR), Raman spectroscopy, and atomic force microscopy (AFM) are employed to study the influence of substrate surfaces on the structural properties of the organic films. Both phases of PTCDA, α- and β-polymorphs, are found to grow on both substrates. The substrate surfaces determine the preferential growth of α- and β-phases of PTCDA crystals at room temperature.

  5. The apparent effect of sample surface damage on the dielectric parameters of GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Engelbrecht, J.A.A. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)], E-mail: Japie.Engelbrecht@nmmu.ac.za; Hashe, N.G. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Hillie, K.T. [CSIR-NML Laboratory, P.O. Box 395, Pretoria 0001 (South Africa); Claassens, C.H. [Physics Department, University of the Free State, Bloemfontein 9300 (South Africa)

    2007-12-15

    The dielectric and optical parameters determined by infrared reflectance spectroscopy and computer simulation of a set of GaAs substrates of various surface topologies are reported. The influence of surface damage on the parameters is noted.

  6. The apparent effect of sample surface damage on the dielectric parameters of GaAs

    International Nuclear Information System (INIS)

    Engelbrecht, J.A.A.; Hashe, N.G.; Hillie, K.T.; Claassens, C.H.

    2007-01-01

    The dielectric and optical parameters determined by infrared reflectance spectroscopy and computer simulation of a set of GaAs substrates of various surface topologies are reported. The influence of surface damage on the parameters is noted

  7. Towards low-dimensional hole systems in Be-doped GaAs nanowires

    DEFF Research Database (Denmark)

    Ullah, A. R.; Gluschke, J. G.; Jeppesen, Peter Krogstrup

    2017-01-01

    -gates produced using GaAs nanowires with three different Be-doping densities and various AuBe contact processing recipes. We show that contact annealing only brings small improvements for the moderately doped devices under conditions of lower anneal temperature and short anneal time. We only obtain good......GaAs was central to the development of quantum devices but is rarely used for nanowire-based quantum devices with InAs, InSb and SiGe instead taking the leading role. p-type GaAs nanowires offer a path to studying strongly confined 0D and 1D hole systems with strong spin–orbit effects, motivating...... our development of nanowire transistors featuring Be-doped p-type GaAs nanowires, AuBe alloy contacts and patterned local gate electrodes towards making nanowire-based quantum hole devices. We report on nanowire transistors with traditional substrate back-gates and EBL-defined metal/oxide top...

  8. Ultrafast self-modulation of the optical absorption spectrum under conditions of both the ultrashort optical pumping and superluminescence in GaAs

    International Nuclear Information System (INIS)

    Ageeva, N. N.; Bronevoi, I. L.; Krivonosov, A. N.; Stegantsov, S. V.

    2006-01-01

    Self-modulation of the optical absorption spectrum is observed during the picosecond photogeneration of charge carriers and intense superluminescence in GaAs. As the picosecond delay τ of the probing pulse with respect to the pump pulse is varied in the region of τ < 0, the local points of the absorption intensification (juts) shift along the spectrum (the modulation resembles a running wave). As the value of τ is varied in the vicinity of τ = 0, the juts in the spectrum arise and disappear at approximately fixed photon energies (the modulation resembles a standing wave). At certain photon energies, the dependence of the rate of variation in the absorption coefficient dα/dτ on τ is found to be modulated by pulsations, similarly to the previously observed modulation of the picosecond stimulated emission from GaAs. Presumably, the spectrum self-modulation represents (and, thus, reveals) the modulation of the electron distribution in the conduction band. This modulation is caused by the fact that the evolution of the electron-population depletion at the bottom of the conduction band during superluminescence reflects (due to the electron-phonon interaction) on the population of the upper energy levels in the band

  9. In-situ OMVPE process sensing of GaAs and AlGaAs by photoreflectance

    Science.gov (United States)

    Capuder, K.; Norris, P. E.; Shen, H.; Hang, Z.; Pollak, F. H.

    1990-04-01

    The contactless electromodulation method of photoreflectance has been successfully applied as an in-situ sensor of the OMVPE process. The direct band gap, E 0, of GaAs and AIGaAs has been measured, in-situ, under OMVPE growth conditions. To the best of our knowledge, this is the first report of an in-situ photoreflectance measurement of III-V materials properties in an OMVPE system. This is significant in that it illustrates the potential for the application of photoreflectance as an in-situ process monitor, analogous to the use of RHEED measurements in MBE. The GaAs substrate temperature of 650°, as measured by an optical pyrometer, corresponds to the temperature derived using the Varshni equation and published Varshni coefficients to within the error of the published data.

  10. Molecular beam epitaxy of AlSb on GaAs and GaSb on AlSb films

    International Nuclear Information System (INIS)

    Gotoh, H.; Sasamoto, K.; Kuroda, S.; Kimata, M.

    1983-01-01

    Single crystalline AlSb films are successfully grown, by MBE on GaAs substrates at temperatures higher than 400 0 C. The surface gives a C(2 x 6) structure under Sb stabilized conditions. Undoped AlSb is p-type with resistivities of 10 2 to 10 3 Ωcm. Then, GaSb films are grown on AlSb/GaAs. It can be seen, from RHEED observation that the interface between AlSb and GaSb is very smooth, and the layer growth continues at the interface. Fabricating that structure improves the properties of GaSb in comparison with those of GaSb directly grown on GaAs by the relaxation of lattice mismatch. (author)

  11. Peeled film GaAs solar cells for space power

    Science.gov (United States)

    Wilt, D. M.; Deangelo, F. L.; Thomas, R. D.; Bailey, S. G.; Landis, G. A.; Brinker, D. J.; Fatemi, N. S.

    1990-01-01

    Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

  12. Peeled film GaAs solar cells for space power

    Science.gov (United States)

    Wilt, D. M.; Deangelo, F. L.; Thomas, R. D.; Bailey, S. G.; Landis, G. A.; Brinker, D. J.; Fatemi, N. S.

    1990-05-01

    Gallium arsenide (GaAs) peeled film solar cells were fabricated, by Organo-Metallic Vapor Phase Epitaxy (OMVPE), incorporating an aluminum arsenide (AlAs) parting layer between the device structure and the GaAs substrate. This layer was selectively removed by etching in dilute hydrofloric (HF) acid to release the epitaxial film. Test devices exhibit high series resistance due to insufficient back contact area. A new design is presented which uses a coverglass superstrate for structural support and incorporates a coplanar back contact design. Devices based on this design should have a specific power approaching 700 W/Kg.

  13. Diffusion of $^{52}$Mn in GaAs

    CERN Multimedia

    2002-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of Mn in GaAs under intrinsic conditions in a previously un-investigated temperature region. The aim of the presently proposed experiments is twofold. \\begin{itemize} \\item A quantitative study of Mn diffusion in GaAs at low Mn concentrations would be decisive in providing new information on the diffusion mechanism involved. \\item As Ga vacancies are expected to be involved in the Mn diffusion process it can be predicted that also the GaAs material growth technique most likely plays a role. To clarify this assumption diffusion experiments will be conducted for GaAs material grown by two different techniques. \\end{itemize} For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{52}$Mn$^{+}$ ion beam.

  14. Harmonic generations in a lens-shaped GaAs quantum dot: Dresselhaus and Rashba spin-orbit couplings under electric and magnetic fields

    Science.gov (United States)

    Zamani, A.; Azargoshasb, T.; Niknam, E.; Mohammadhosseini, E.

    2017-06-01

    In this work, effects of external electric and magnetic fields in the presence of both Rashba and Dresselhaus spin-orbit couplings on the second and third harmonic generations (SHG and THG) of a lens-shaped GaAs quantum dot are studied. Energy eigenvalues and eigenvectors are calculated numerically and optical properties are obtained using the compact density matrix approach. Our results reveal that, an increase in the magnetic field, leads to both red and blue shifts in resonant peaks of both SHG and THG. On the other hand, augmentation of electric field leads to blue shift in all resonant peaks except the first peak related to lowest transition. Also the dipole moment matrix elements increase by enhancing both electric and magnetic fields. Finally the effect of dot size is studied and results illustrate that increment in size reduces the transition energies except the lowest one and thus leads to red shift in resonant peaks while the first peak remains constant.

  15. Three-dimensional lattice rotation in GaAs nanowire growth on hydrogen-silsesquioxane covered GaAs (001) using molecular beam epitaxy

    Science.gov (United States)

    Tran, Dat Q.; Pham, Huyen T.; Higashimine, Koichi; Oshima, Yoshifumi; Akabori, Masashi

    2018-05-01

    We report on crystallographic behaviors of inclined GaAs nanowires (NWs) self-crystallized on GaAs (001) substrate. The NWs were grown on hydrogen-silsesquioxane (HSQ) covered substrates using molecular beam epitaxy (MBE). Commonly, the epitaxial growth of GaAs B (B-polar) NWs is prominently observed on GaAs (001); however, we yielded a remarkable number of epitaxially grown GaAs A (A-polar) NWs in addition to the majorly obtained B-polar NWs. Such NW orientations are always accompanied by a typical inclined angle of 35° from (001) plane. NWs with another inclined angle of 74° were additionally observed and attributed to be -oriented, not in direct epitaxial relation with the substrate. Such 74° NWs' existence is related to first-order three-dimensional (3D) lattice rotation taking place at the very beginning of the growth. It turns out that spatially 60° lattice rotation around directions at GaAs seeds is essentially in charge of A- and B-polar 74° NWs. Transmission electron microscope observations reveal a high density of twinning in the B-polar NWs and twin-free characteristic in the A-polar NWs.

  16. Neurite development in PC12 cells on flexible micro-textured substrates under cyclic stretch.

    Science.gov (United States)

    Haq, Furqan; Keith, Charles; Zhang, Guigen

    2006-01-01

    We investigated the combined effect of micro-texture and mechanical strain on neuronal cell development such as neurite length and neurite density in a rat pheochromocytoma cell line (PC12 cells). Cells were seeded on flexible silicone substrates with micro-texture or no texture (smooth) and cultured under static and dynamic conditions. In the static condition substrates were not stretched and in the dynamic conditions substrates were subjected to cyclic uniaxial stretching at three different strain levels of 4%, 8%, and 16% with each at three different strain rates at 0.1, 0.5, and 1.0 Hz. Results showed that of all cell cultures there was no significant difference in neurite development between cells on smooth and textured substrates, except in the static and 4% at 0.1 Hz conditions, where micro-texture induced significantly longer neurites. With both types of substrates, a lower mechanical condition (4% at 1.0 Hz or 16% at 0.1 Hz) resulted in more and longer neurites and lower cell density, and a higher mechanical condition (16% at 1.0 Hz) resulted in fewer and shorter neurites and lower cell density as compared to the static condition. These findings suggest that the effect of the micro-texture on neurite development is more prominent in low mechanical conditions than in high mechanical conditions and that the strain level and strain rate have an interrelated effect on neurite development: a higher strain level at a lower strain rate has a similar effect as a lower strain level at a higher strain rate in terms of promoting neurite development.

  17. Greatly Enhancing Catalytic Activity of Graphene by Doping the Underlying Metal Substrate.

    Science.gov (United States)

    Guo, Na; Xi, Yongjie; Liu, Shuanglong; Zhang, Chun

    2015-07-09

    Graphene-based solid-state catalysis represents a new direction in applications of graphene and has attracted a lot of interests recently. However, the difficulty in fine control and large-scale production of previously proposed graphene catalysts greatly limits their industrial applications. Here we present a novel way to enhance the catalytic activity of graphene, which is highly efficient yet easy to fabricate and control. By first-principles calculations, we show that when the underlying metal substrate is doped with impurities, the catalytic activity of the supported graphene can be drastically enhanced. Graphene supported on a Fe/Ni(111) surface is chosen as a model catalyst, and the chemical reaction of CO oxidation is used to probe the catalytic activity of graphene. When the underlying Fe/Ni(111) substrate is impurity free, the graphene is catalytically inactive. When a Zn atom is doped into the substrate, the catalytic activity of the supported graphene is greatly enhanced, and the reaction barrier of the catalyzed CO oxidation is reduced to less than 0.5 eV. Intriguing reaction mechanism of catalyzed CO oxidation is revealed. These studies suggest a new class of graphene-based catalysts and pave the way for future applications of graphene in solid-state catalysis.

  18. Recovery Act : Near-Single-Crystalline Photovoltaic Thin Films on Polycrystalline, Flexible Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Venkat Selvamanickam; Alex Freundlich

    2010-11-29

    between the various layers. The defect density in GaAs was reduced by a factor of five by adding a step of in-situ deposition of Ge by MBE on the sputtered Ge prior to GaAs growth. We have investigated device design strategies that would support development of high-efficiency devices in presence of dislocation densities of 10^8 cm^-2 present in our epitaxial GaAs films. Results from modeling work show that with a proper emitter, base and doping selection, the modeled efficiency of a GaAs cells with dislocation densities of 10^9 and 10^8 cm^-2 could be increased from 1% and 7% to 11% and 17% respectively. Under AM0, this single junction GaAs solar cell, has optimized value of emitter and base thickness of around 0.7 and 1.7 microns respectively, to give a maximum efficiency of 24.2%. We have fabricated complete GaAs solar cells using our Ge films on metal substrates. Pattern resolution of few microns with well-defined grid line of 30 microns has been realized on few cm square flexible templates. The ability to grow single-crystalline-like Ge films on flexible, polycrystalline substrates by reel-to-reel tape processing now provides an immense potential to fabricate high quality III-V photovoltaics on flexible, inexpensive substrates.

  19. Structural Evolution During Formation and Filling of Self-patterned Nanoholes on GaAs (100 Surfaces

    Directory of Open Access Journals (Sweden)

    Zhou Lin

    2008-01-01

    Full Text Available Abstract Nanohole formation on an AlAs/GaAs superlattice gives insight to both the “drilling” effect of Ga droplets on AlAs as compared to GaAs and the hole-filling process. The shape and depth of the nanoholes formed on GaAs (100 substrates has been studied by the cross-section transmission electron microscopy. The Ga droplets “drill” through the AlAs layer at a much slower rate than through GaAs due to differences in activation energy. Refill of the nanohole results in elongated GaAs mounds along the [01−1] direction. As a result of capillarity-induced diffusion, GaAs favors growth inside the nanoholes, which provides the possibility to fabricate GaAs and AlAs nanostructures.

  20. Structure and homoepitaxial growth of GaAs(6 3 1)

    International Nuclear Information System (INIS)

    Mendez-Garcia, V.H.; Ramirez-Arenas, F.J.; Lastras-Martinez, A.; Cruz-Hernandez, E.; Pulzara-Mora, A.; Rojas-Ramirez, J.S.; Lopez-Lopez, M.

    2006-01-01

    We have studied the surface atomic structure of GaAs(6 3 1), and the GaAs growth by molecular beam epitaxy (MBE) on this plane. After the oxide desorption process at 585 deg. Creflection high-energy electron diffraction (RHEED) showed along the [-1 2 0] direction a 2x surface reconstruction for GaAs(6 3 1)A, and a 1x pattern was observed for GaAs(6 3 1)B. By annealing the substrates for 60 min, we observed that on the A surface appeared small hilly-like features, while on GaAs(6 3 1)B surface pits were formed. For GaAs(6 3 1)A, 500 nm-thick GaAs layers were grown at 585 deg. C. The atomic force microscopy (AFM) images at the end of growth showed the self-formation of nanoscale structures with a pyramidal shape enlarged along the [5-9-3] direction. Transversal views of the bulk-truncated GaAs(6 3 1) surface model showed arrays of atomic grooves along this direction, which could influence the formation of the pyramidal structures

  1. Neural substrates underlying motor skill learning in chronic hemiparetic stroke patients

    Directory of Open Access Journals (Sweden)

    Stephanie eLefebvre

    2015-06-01

    Full Text Available Motor skill learning is critical in post-stroke motor recovery, but little is known about its underlying neural substrates. Recently, using a new visuomotor skill learning paradigm involving a speed/accuracy trade-off in healthy individuals we identified three subpopulations based on their behavioral trajectories: fitters (in whom improvement in speed or accuracy coincided with deterioration in the other parameter, shifters (in whom speed and/or accuracy improved without degradation of the other parameter, and non-learners. We aimed to identify the neural substrates underlying the first stages of motor skill learning in chronic hemiparetic stroke patients and to determine whether specific neural substrates were recruited in shifters versus fitters. During functional magnetic resonance imaging (fMRI, 23 patients learned the visuomotor skill with their paretic upper limb. In the whole-group analysis, correlation between activation and motor skill learning was restricted to the dorsal prefrontal cortex of the damaged hemisphere (DLPFCdamh: r=-0.82 and the dorsal premotor cortex (PMddamh: r=0.70; the correlations was much lesser (-0.160.25 in the other regions of interest. In a subgroup analysis, significant activation was restricted to bilateral posterior parietal cortices of the fitters and did not correlate with motor skill learning. Conversely, in shifters significant activation occurred in the primary sensorimotor cortexdamh and supplementary motor areadamh and in bilateral PMd where activation changes correlated significantly with motor skill learning (r=0.91. Finally, resting-state activity acquired before learning showed a higher functional connectivity in the salience network of shifters compared with fitters (qFDR<0.05. These data suggest a neuroplastic compensatory reorganization of brain activity underlying the first stages of motor skill learning with the paretic upper limb in chronic hemiparetic stroke patients, with a key role of

  2. Substrate Wetting Under the Conditions of Drop Free Falling on a Heated Surface

    Directory of Open Access Journals (Sweden)

    Batischeva Ksenia A.

    2015-01-01

    Full Text Available We conducted an experimental study of a heated substrate wetting by drops of distilled water under the conditions of their free-falling. The studies were conducted using a shadow system, which consists of a light source, lens and high-speed video camera. It was found that the maximum wetted area of drop is directly proportional to its volume. The main ranges of evolution of distilled water drop behavior on the heated surface (change of geometry at contact with the surface have been conditionally divided.

  3. Ultrafast dynamics of ligand and substrate interaction in endothelial nitric oxide synthase under Soret excitation.

    Science.gov (United States)

    Hung, Chih-Chang; Yabushita, Atsushi; Kobayashi, Takayoshi; Chen, Pei-Feng; Liang, Keng S

    2016-01-01

    Ultrafast transient absorption spectroscopy of endothelial NOS oxygenase domain (eNOS-oxy) was performed to study dynamics of ligand or substrate interaction under Soret band excitation. Photo-excitation dissociates imidazole ligand in 4ps. The eNOS-oxy without additive is partially bound with water molecule, thus its photoexcited dynamics also shows ligand dissociation in <800fs. Then it followed by vibrational cooling coupled with charge transfer in 4.8ps, and recombination of ligand to distal side of heme in 12ps. Copyright © 2016 Elsevier B.V. All rights reserved.

  4. MeV Implantation Studies in LPE-Grown GaAs and InP

    Science.gov (United States)

    1989-03-31

    expected in 1991. 1. LPE growth of In-doped GaAs and Characterization (reprint attached ): With an objective of obtaining a high-quality starting...material for the MeV ion- implatation study, we doped GaAs with Indium in a concentration ranging from 1 x 1019 to I x 1020 cm ŗ. Liquid Phase Epitaxy...2. MeV ion damage effect in the strained GaInAs epitaxial layer on GaAs (001) substrates (reprints attached ) : Various Gal.InxAs/GaAs (001) single

  5. Molecular beam epitaxial growth and structural characterization of ZnS on (001) GaAs

    Science.gov (United States)

    Benz, R. G., II; Huang, P. C.; Stock, S. R.; Summers, C. J.

    1988-01-01

    The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

  6. The effect of the adsorbate layer on the work function reduction of gold substrates under external electric fields

    Science.gov (United States)

    He, Xiang; Cheng, Feng; Chen, Zhao-Xu

    2017-12-01

    The interface interaction between the dimethyl sulfide (DMS) molecule and the gold substrate under external electric fields is investigated by density functional theory method. The polarized DMS adsorbate reduces the work function of the gold substrate while the induced substrate dipole upon the adsorption slightly increases the work function. The DMS layer partially shields the Au(111) substrate from the electric fields and the vacuum level of DMS/Au(111) shifts less than of Au(111) in consequence. Under electric fields pointing outward from the Au(111) surface, both the reduction of work function and the adsorption of DMS molecule are enhanced on the surface. We also suggest the possible application of the field-effect transistor (FET) sensor with gold gate for detecting DMS molecule by utilizing the reduction of substrate work function upon adsorption. The effects of coverage and electric field on the theoretical sensitivity of the sensor are also discussed.

  7. High quality superconducting NbN thin films on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Marsili, Francesco; Fiore, Andrea [COBRA Research Institute, Eindhoven University of Technology, PO Box 513, NL-5600MB Eindhoven (Netherlands); Gaggero, Alessandro; Leoni, Roberto [Istituto di Fotonica e Nanotecnologie (IFN), CNR, via Cineto Romano 42, I-00156 Roma (Italy); Li, Lianhe H; Surrente, Alessandro [Institute of Photonics and Quantum Electronics (IPEQ), Ecole Polytechnique Federale de Lausanne (EPFL), Station 3, CH-1015 Lausanne (Switzerland); Levy, Francis, E-mail: francesco.marsili@epfl.c [Institute of Condensed Matter Physics (IPMC), Ecole Polytechnique Federale de Lausanne (EPFL), Station 3, CH-1015 Lausanne (Switzerland)

    2009-09-15

    A very promising way to increase the detection efficiency of nanowire superconducting single-photon detectors (SSPDs) consists in integrating them with advanced optical structures such as distributed Bragg reflectors (DBRs) and optical waveguides. This requires transferring the challenging SSPD technology from the usual substrates, i.e. sapphire and MgO, to an optical substrate like GaAs, on which DBRs and waveguides can be easily obtained. Therefore, we optimized the deposition process of few-nm thick superconducting NbN films on GaAs and AlAs/GaAs-based DBRs at low temperatures (substrate temperature T{sub S} = 400 {sup 0}C), in order to prevent As evaporation. NbN films ranging from 150 to 3 nm in thickness were then deposited on single-crystal MgO, GaAs, MgO-buffered GaAs and DBRs by current-controlled DC magnetron sputtering (planar, circular, balanced configuration) of Nb in an Ar+N{sub 2} plasma. 5.5 nm thick NbN films on GaAs exhibit T{sub C} = 10.7 K, {Delta}T{sub C} = 1.1 K and RRR = 0.7. The growth of such high quality thin NbN films on GaAs and DBRs has never been reported before.

  8. Droplet evaporation on a horizontal substrate under gravity field by mesoscopic modeling.

    Science.gov (United States)

    Xie, Chiyu; Zhang, Jianying; Bertola, Volfango; Wang, Moran

    2016-02-01

    The evaporation of water drop deposited on a horizontal substrate is investigated using a lattice Boltzmann method (LBM) for multiphase flows with a large-density ratio. To account for the variation of evaporation flux distribution along the drop interface, a novel evaporation scheme is introduced into the LBM framework, and validated by comparison with experimental data. We aim at discovering the effect of gravity on the evaporating drop in detail, and various evaporation conditions are considered as well as different wetting properties of the substrates. An effective diameter is introduced as an indicator of the critical drop size under which gravity is negligible. Our results show that such critical diameter is much smaller than the capillary length, which has been widely accepted as the critical size in previous and current works. The critical diameter is found to be almost independent of the evaporation conditions and the surface wettability. A correlation between this critical diameter and the capillary length is also proposed for easy use in applications. Copyright © 2015 Elsevier Inc. All rights reserved.

  9. X-ray in-situ study of copper electrodeposition on UHV prepared GaAs(001) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gruender, Yvonne

    2008-06-02

    For this work a unique setup for in-situ electrochemical studies was employed and improved. This setup permits UHV preparation of the GaAs(001) surface with a defined surface termination (arsenic-rich or gallium-rich) and its characterization by SXRD in UHV, under ambient pressure in inert gas and in electrolyte under potential control without passing through air. The GaAs(001) surfaces were capped by amorphous arsenic. This permitted to ship them through ambient air. Afterwards smooth well defined GaAs(001) surfaces could be recovered by thermal annealing in UHV. A first investigation of the arsenic capped sample was done by atomic force microscopy (AFM) and Surface X-Ray Diffraction (SXRD). The non bulk like termination of the arsenic buried GaAs(001) surface was revealed. For the electrochemical metal deposition, arsenic terminated (2 x 4) reconstructed and gallium terminated (4 x 2) reconstructed GaAs(001) surfaces were employed. These surfaces were characterized by STM, LEED and a first time by SXRD. The surfaces are smooth, however, a higher degree of disorder than for MBE prepared reconstructed GaAs(001) is found. After exposure of the sample to nitrogen, the surfaces were then again studied by SXRD. These two steps characterizing the bare GaAs(001) surfaces permitted us to get a better knowledge of the starting surface and its influence on the later electrodeposited copper. At ambient pressure both reconstructions are lifted, but the surface is not bulk-like terminated as can be deduced from the crystal truncation rods. Epitaxial copper clusters grow upon electrodeposition on the UHV prepared GaAs(001) surface. The copper lattice is rotated and inclined with respect to the GaAs substrate lattice, leading to eight symmetry equivalent domains. The influence of the surface termination as well as the nucleation potential on the structure of the electrodeposited copper were investigated. The tilt and rotation angles do not depend on the deposition potential but

  10. Cellulase Production by Native Bacteria Using Water Hyacinth as Substrate under Solid State Fermentation

    Directory of Open Access Journals (Sweden)

    Suresh Chandra Kurup, R.

    2005-01-01

    Full Text Available Most of the freshwater systems in tropical countries are infested with one kind of aquatic weed or the other causing serious environmental problems. All efforts to control the growth and spread of these weeds have failed miserably and hence the concept of eradication through utilization is being adopted by many researchers. Solid state fermentation, the culturing of microorganisms on moist solid substrates in the absence or near absence of free water, has generatedgreat deal of interest among researchers because of its various advantages over the submerged fermentation technique. Cellulase enzyme is used extensively in various industries, especially in textile, food and in the bioconversion of lignocellulosic wastes to alcohol. The extensive use of cellulase in industries depends on the cost of the enzyme and hence considerable research is being carried out to isolate better microbial strains and also to develop new fermentationprocesses with the aim to reduce the product cost. The objective of the present study is to determine whether water hyacinth, one of the commonly found aquatic weeds, can be used as a substrate for cellulase production, by three native bacterial isolates named WHB 3, WHB 4 and SMB 3, under the process of solid state fermentation. Results indicatethat all the three isolates produced cellulase enzyme by using water hyacinth as the solid support. Under optimized conditions of moisture, pH, temperature, incubation time and inoculum concentration, the enzyme yield increased from 16.8 to 94.8 units for SMB 3, from 25.2 to 110.4 units for WHB 3 and from 18.0 to 127.2 units for WHB 4. The addition of nitrogen and carbon sources resulted in a significant increase in cellulase yield and WHB 3 produced the maximum amount of 216 units followed by SMB 3 and WHB 4.

  11. High-efficiency, thin-film- and concentrator solar cells from GaAs. Final report; High-efficiency, Duennschicht- und Konzentrator-Solarzellen aus Galliumarsenid. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Wettling, W. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Bett, A.W. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Pilkuhn, M. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Scholz, F. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Baldus, A. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Blieske, U. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Blug, A. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Duong, T. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Schetter, C. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Stollwerck, G. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Sulima, O. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Wegener, A. [Fraunhofer-Institut fuer Solare Energiesysteme (ISE), Freiburg im Breisgau (Germany); Doernen, A. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Frankowsky, G. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Haase, D. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Hahn, G. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Hangleiter, A. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Stauss, P. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Tsai, C.Y. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4; Zieger, K. [Stuttgart Univ. (Germany). Physikalisches Teilinstitut 4

    1996-10-01

    Main topic of the project was the manufacturing of highly efficient GaAs-solar cells and the fabrication of concentrator cells. During this process significant progress was made with the material preparation, the solar cell technology and the material and process characterisation. This succeeded in the following efficiencies: - GaAs solar cell made by MOVPE technology: 22.9% on 4 cm{sup 2} (AM1.5g) - GaAs solar cell made by LPE-ER process: 22.8% on 4 cm{sup 2} (AM1.5g) - GaAs concentrator solar cell made by LPE-ER process: 24.9% at C=100xAM1.5d - GaAs concentrator module with fresnel lenses: Module efficiency 20.1% (under irradiation of 793 W/m{sup 2}). Another main focus was the epitaxy of GaAs on Si substrate. Two different approaches were investigated. Together with the cooperation partner ASE, Heilbronn a selective growth technology was developed that led to a decreased crack formation. By a simultanous optimization of the other epitaxy and process parameters, the efficiency was increased up to 16.6% AM0 on 1 cm{sup 2} solar cells. Furthermore a hybrid epitaxy was investigated. A GaAs layer was deposited onto a Si substrate using MOVPE. The solar cell structure was grown with a low temperature LPE. Unexpected difficulties appeared with this process, so that fundamental experiments needed to be done with the LPE technology. So far, no solar cells could be manufactured with this method. In addition, work was performed on GaInP solar cells on GaAs substrate. An efficiency of 15.7% (AM0) was acchieved. (orig.) [Deutsch] Gegenstand des Projekts war die Herstellung hocheffizienter GaAs-Solarzellen und die Fertigung von Konzentratorsolarzellen. Dazu wurden wesentliche Fortschritte bei der Materialpraeparation, der Solarzellentechnologie und der Material- and Prozesscharakterisierung erzielt. Diese Erfolge druecken sich in den erzielten Wirkungsgraden aus: - GaAs-Solarzelle hergestellt mit MOVPE-Technologie: 22.9% auf 4 cm{sup 2} (AM1.5g) - GaAs-Solarzelle hergestellt

  12. GaAs strip detectors: the Australian production program

    International Nuclear Information System (INIS)

    Butcher, K.S.A.; Alexiev, D.

    1995-01-01

    The Australian High Energy Physics consortium (composed of the University of Melbourne, the University of Sydney and ANSTO) has been investigating the possibility of producing a large area wheel of SI GaAs detectors for the ATLAS detector array. To help assess the extent of Australia's role in this venture a few SI GaAs microstrip detectors are to be manufactured under contract by the CSIRO division of Radiophysics GaAs IC Prototyping Facility. The planned production of the devices is discussed. First, the reasons for producing the detectors here in Australia are examined, then some basic characteristics of the material are considered, and finally details are provided of the design used for the manufacture of the devices. Two sets of detectors will be produced using the standard Glasgow production recipe; SIGaAs and GaN. The Glasgow mask set is being used as a benchmark against which to compare the Australian devices

  13. Status of fully integrated GaAs particle detectors

    International Nuclear Information System (INIS)

    Braunschweig, W.; Breibach, J.; Kubicki, Th.; Luebelsmeyer, K.; Maesing, Th.; Rente, C.; Roeper, Ch.; Siemes, A.

    1999-01-01

    GaAs strip detectors are of interest because of their radiation hardness at room temperature and the high absorption coefficient of GaAs for x-rays. The detectors currently under development will be used in the VLQ-experiment at the H1 experiment at the HERA collider. This will be the first high energy physics experiment where GaAs detectors will be used. The detectors have a sensitive area of 5 x 4 cm with a pitch of 62 μ m. Due to the high density of channels the biasing resistors and coupling capacitors are integrated. For the resistors a resistive layer made of Cermet is used. The properties of the first fully integrated strip detector are presented

  14. Photovoltaic X-ray detectors based on epitaxial GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

    2005-12-01

    A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

  15. Transport and magnetic properties of Mn- and Mg-implanted GaAs layers

    International Nuclear Information System (INIS)

    Kulbachinskii, V.A.; Lunin, R.A.; Gurin, P.V.; Perov, N.S.; Sheverdyaeva, P.M.; Danilov, Yu.A.

    2006-01-01

    Mn-doped GaAs layers were fabricated by direct ion implantation into semi-insulating GaAs (100) substrates. The implanted samples were annealed at temperatures T a =700-800 o C. At these temperatures MnAs clusters are formed in GaAs due to decay of the supersaturated solid solution of Mn in GaAs. Additional Mg ion implantation was used to provide an enhancement of p-type doping in (Ga,Mn)As layers. Temperature dependence of resistance was measured between 4.2 and 300K, and the Hall effect was measured at temperatures of 4.2-200K. Anomalous Hall effect and ferromagnetic behavior have been found for all samples. An enhanced positive magnetoresistance was also observed at T>30K

  16. CMOS compatible route for GaAs based large scale flexible and transparent electronics

    KAUST Repository

    Nour, Maha A.

    2014-08-01

    Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semitransparent platform. We show a simple release process for peeling off 200 nm of GaAs from 200 nm GaAs/300 nm AlAs stack on GaAs substrate using diluted hydrofluoric acid (HF). This process enables releasing a single top layer compared to peeling off all layers with small sizes at the same time. This is done utilizing a network of release holes which contributes to the better transparency (45 % at 724 nm wavelength) observed.

  17. Surface study of organopalladium molecules on S-terminated GaAs

    International Nuclear Information System (INIS)

    Konishi, Tomoya; Toujyou, Takashi; Ishikawa, Takuma; Teraoka, Teruki; Ueta, Yukiko; Kihara, Yoshifumi; Moritoki, Hideji; Tono, Tatsuo; Musashi, Mio; Tada, Takashi; Tsukamoto, Shiro; Nishiwaki, Nagatoshi; Fujikawa, Seiji; Takahasi, Masamitu; Bell, Gavin; Shimoda, Masahiko

    2011-01-01

    Organopalladium species ({Pd}) immobilized on an S-terminated GaAs substrate (S/GaAs) effectively catalyzes C-C bond formation in the Mizoroki-Heck reaction with cycle durability. However, the immobilizing mechanism of {Pd} is unknown. In this study, we deposited Pd(OCOCH 3 ) 2 on S/GaAs in two different methods, namely dry-physical vapor-deposition and wetchemical deposition, and compared the catalytic activities in the Mizoroki-Heck reaction. Also, S-termination and {Pd}-immobilization on GaAs grains were performed by the wet-chemical method to monitor the change in the surface chemical structure during the preparation process with diffuse reflectance Fourier transform infrared spectroscopy (FT-IR). FT-IR measurements implied that the immobilization of catalytic active {Pd} was related to the OH groups on the S-terminated surface. {Pd}-S/GaAs prepared dryphysically showed poor catalytic activity, because {Pd} was not immobilized under absence of OH groups. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. The insula: a critical neural substrate for craving and drug seeking under conflict and risk

    Science.gov (United States)

    Naqvi, Nasir H.; Gaznick, Natassia; Tranel, Daniel; Bechara, Antoine

    2014-01-01

    Drug addiction is characterized by the inability to control drug use when it results in negative consequences or conflicts with more adaptive goals. Our previous work showed that damage to the insula disrupted addiction to cigarette smoking—the first time that the insula was shown to be a critical neural substrate for addiction. Here, we review those findings, as well as more recent studies that corroborate and extend them, demonstrating the role of the insula in (1) incentive motivational processes that drive addictive behavior, (2) control processes that moderate or inhibit addictive behavior, and (3) interoceptive processes that represent bodily states associated with drug use. We then describe a theoretical framework that attempts to integrate these seemingly disparate findings. In this framework, the insula functions in the recall of interoceptive drug effects during craving and drug seeking under specific conditions where drug taking is perceived as risky and/or where there is conflict between drug taking and more adaptive goals. We describe this framework in an evolutionary context and discuss its implications for understanding the mechanisms of behavior change in addiction treatments. PMID:24690001

  19. Neuronal Substrates Underlying Performance Variability in Well-Trained Skillful Motor Task in Humans

    Directory of Open Access Journals (Sweden)

    Nobuaki Mizuguchi

    2016-01-01

    Full Text Available Motor performance fluctuates trial by trial even in a well-trained motor skill. Here we show neural substrates underlying such behavioral fluctuation in humans. We first scanned brain activity with functional magnetic resonance imaging while healthy participants repeatedly performed a 10 s skillful sequential finger-tapping task. Before starting the experiment, the participants had completed intensive training. We evaluated task performance per trial (number of correct sequences in 10 s and depicted brain regions where the activity changes in association with the fluctuation of the task performance across trials. We found that the activity in a broader range of frontoparietocerebellar network, including the bilateral dorsolateral prefrontal cortex (DLPFC, anterior cingulate and anterior insular cortices, and left cerebellar hemisphere, was negatively correlated with the task performance. We further showed in another transcranial direct current stimulation (tDCS experiment that task performance deteriorated, when we applied anodal tDCS to the right DLPFC. These results indicate that fluctuation of brain activity in the nonmotor frontoparietocerebellar network may underlie trial-by-trial performance variability even in a well-trained motor skill, and its neuromodulation with tDCS may affect the task performance.

  20. Influence of dormancy on microbial competition under intermittent substrate supply: insights from model simulations.

    Science.gov (United States)

    Stolpovsky, Konstantin; Fetzer, Ingo; Van Cappellen, Philippe; Thullner, Martin

    2016-06-01

    Most natural environments are characterized by frequent changes of their abiotic conditions. Microorganisms can respond to such changes by switching their physiological state between activity and dormancy allowing them to endure periods of unfavorable abiotic conditions. As a consequence, the competitiveness of microbial species is not simply determined by their growth performance under favorable conditions but also by their ability and readiness to respond to periods of unfavorable environmental conditions. The present study investigates the relevance of factors controlling the abundance and activity of individual bacterial species competing for an intermittently supplied substrate. For this purpose, numerical experiments were performed addressing the response of microbial systems to regularly applied feeding pulses. Simulation results show that community dynamics may exhibit a non-trivial link to the frequency of the external constraints and that for a certain combination of these environmental conditions coexistence of species is possible. The ecological implication of our results is that even non-dominant, neglected species can have a strong influence on realized species composition of dominant key species, due to their invisible presence enable the coexistence between important key species and by this affecting provided function of the system. © FEMS 2016. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com.

  1. The insula: a critical neural substrate for craving and drug seeking under conflict and risk.

    Science.gov (United States)

    Naqvi, Nasir H; Gaznick, Natassia; Tranel, Daniel; Bechara, Antoine

    2014-05-01

    Drug addiction is characterized by the inability to control drug use when it results in negative consequences or conflicts with more adaptive goals. Our previous work showed that damage to the insula disrupted addiction to cigarette smoking-the first time that the insula was shown to be a critical neural substrate for addiction. Here, we review those findings, as well as more recent studies that corroborate and extend them, demonstrating the role of the insula in (1) incentive motivational processes that drive addictive behavior, (2) control processes that moderate or inhibit addictive behavior, and (3) interoceptive processes that represent bodily states associated with drug use. We then describe a theoretical framework that attempts to integrate these seemingly disparate findings. In this framework, the insula functions in the recall of interoceptive drug effects during craving and drug seeking under specific conditions where drug taking is perceived as risky and/or where there is conflict between drug taking and more adaptive goals. We describe this framework in an evolutionary context and discuss its implications for understanding the mechanisms of behavior change in addiction treatments. © 2014 New York Academy of Sciences.

  2. Silver endotaxy in silicon under various ambient conditions and their use as surface enhanced Raman spectroscopy substrates

    International Nuclear Information System (INIS)

    Juluri, R.R.; Ghosh, A.; Bhukta, A.; Sathyavathi, R.; Satyam, P.V.

    2015-01-01

    Search for reliable, robust and efficient substrates for surface enhanced Raman spectroscopy (SERS) leads to the growth of various shapes and nanostructures of noble metals, and in particular, Ag nanostructures for this purpose. Coherently embedded (also known as endotaxial) Ag nanostructures in silicon substrates can be made robust and reusable SERS substrates. In this paper, we show the possibility of the growth of Ag endotaxial structures in Si crystal during Ar and low-vacuum annealing conditions while this is absent in O 2 and ultra high vacuum (UHV) annealing conditions and along with their respective use as SERS substrates. Systems annealed under air-annealing and low-vacuum conditions were found to show larger enhancement factors (typically ≈ 5 × 10 5 in SERS measurement for 0.5 nM Crystal Violet (CV) molecule) while the systems prepared under UHV-annealing conditions (where no endotaxial Ag structures were formed) were found to be not effective as SERS substrates. Extensive electron microscopy, synchrotron X-ray diffraction and Rutherford backscattering spectrometry techniques were used to understand the structural aspects. - Highlights: • Various aspects on the growth of endotaxial Ag nanostructures are presented. • Optimum amount of oxygen is necessary for the growth of endotaxial structures. • Reaction of oxygen with GeOx and SiOx plays a crucial role. • Ag nanostructures prepared under UHV conditions show low SERS activity • SERS enhancement is better for low-vacuum and argon annealing conditions

  3. GaAs nanocrystals: Structure and vibrational properties

    International Nuclear Information System (INIS)

    Nayak, J.; Sahu, S.N.; Nozaki, S.

    2006-01-01

    GaAs nanocrystals were grown on indium tin oxide substrate by an electrodeposition technique. Atomic force microscopic measurement indicates an increase in the size of the nanocrystal with decrease in the electrolysis current density accompanied by the change in the shape of the crystallite. Transmission electron microscopic measurements identify the crystallite sizes to be in the range of 10-15 nm and the crystal structure to be orthorhombic. On account of the quantum size effect, the first optical transition was blue shifted with respect to the band gap of the bulk GaAs and the excitonic peak appeared prominent. A localized phonon mode ascribed to certain point defect occurred in the room temperature micro-Raman spectrum

  4. Influence of implantation conditions of He+ ions on the structure of a damaged layer in GaAs(001)

    International Nuclear Information System (INIS)

    Shcherbachev, Kirill; Bailey, Melanie J.

    2011-01-01

    An investigation into the influence of implantation conditions (dose, energy, and target temperature) of He + ions on the damage structure of GaAs (100) substrates was performed by HRXRD, scanning electron microscopy, and Nomarski microscopy. Blistering is shown to become apparent as characteristic features of isolines in RSMs. We propose that the formation of the defects yielding a characteristic XRDS is defined by the behavior of implanted atoms in the GaAs matrix, depending on two competing processes: (1) formation of the gas-filled bubbles; (2) diffusion of the He atoms from the bubbles toward the surface and deep into the GaAs substrate. We conclude that the gas-filled bubbles change the structure of the irradiated layer, resulting in the formation of strained crystalline areas of the GaAs matrix. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Substrate induced denitrification over or under estimates shifts in soil N₂/N₂O ratios.

    Directory of Open Access Journals (Sweden)

    Nicholas J Morley

    Full Text Available The increase in atmospheric nitrous oxide (N₂O, a potent greenhouse and ozone depleting gas, is of serious global concern. Soils are large contributors to this increase through microbial processes that are enhanced in agricultural land due to nitrogenous fertilizer applications. Denitrification, a respiratory process using nitrogen oxides as electron acceptors in the absence of oxygen, is the main source of N₂O. The end product of denitrification is benign dinitrogen (N₂ and understanding what regulates the shift in ratio of N₂O and N₂ emission is crucial for mitigation strategies. The role of organic carbon in controlling N₂O reduction is poorly understood, and mostly based on application of glucose. Here we investigated how a range of carbon compounds (succinate, butyrate, malic acid, acetate, glucose, sucrose and cysteine affect denitrifier N₂/N₂O production stoichiometry under laboratory conditions. The results show that a soil's capability in efficiently reducing N₂O to N₂ is C substrate dependent and most compounds tested were different in regards to this efficiency compared to glucose. We challenge the concept of using glucose as a model soil C compound in furthering our understanding of denitrification and specifically the efficiency in the N₂O reductase enzyme. Organic acids, commonly exuded by roots, increased N₂/N₂O ratios compared to glucose, and therefore mitigated net N₂O release and we suggest provides better insights into soil regulatory aspects of N₂O reduction. The widespread use of glucose in soil laboratory studies could lead to misleading knowledge on the functioning of denitrification in soils with regards to N₂O reduction.

  6. A study on the electric properties of single-junction GaAs solar cells under the combined radiation of low-energy protons and electrons

    International Nuclear Information System (INIS)

    Zhao Huijie; Wu Yiyong; Xiao Jingdong; He Shiyu; Yang Dezhuang; Sun Yanzheng; Sun Qiang; Lv Wei; Xiao Zhibin; Huang Caiyong

    2008-01-01

    Displacement damage induced by charged particle radiation is the main cause of degradation of orbital-service solar cells, while the radiation-induced ionization shows no permanent damage effect on their electrical properties. It is reported that in single crystal silicon solar cells, low-energy electron radiation does not exert permanent degradation of their properties, but the fluence of electron radiation exerts an influence on the damage magnitude under the combined radiation of protons and electrons. The electrical properties of the single-junction GaAs/Ge solar cells were investigated after irradiation by sequential and synchronous electron and proton beams. Low-energy electron radiation showed no effects on the change of the solar cell properties during sequential or synchronous irradiation, implying ionization during particle radiation could not exert influence on the displacement damage process to the solar cells under the experimental conditions

  7. Production of a functional human acid maltase in tobacco seeds: biochemical analysis, uptake by human GSDII cells, and in vivo studies in GAA knockout mice.

    Science.gov (United States)

    Martiniuk, Frank; Reggi, Serena; Tchou-Wong, Kam-Meng; Rom, William N; Busconi, Matteo; Fogher, Corrado

    2013-10-01

    Genetic deficiency of acid alpha glucosidase (GAA) results in glycogen storage disease type II (GSDII) or Pompe's disease. To investigate whether we could generate a functional recombinant human GAA enzyme (tobrhGAA) in tobacco seeds for future enzyme replacement therapy, we subcloned the human GAA cDNA into the plant expression plasmid-pBI101 under the control of the soybean β-conglycinin seed-specific promoter and biochemically analyzed the tobrhGAA. Tobacco seeds contain the metabolic machinery that is more compatible with mammalian glycosylation-phosphorylation and processing. We found the tobrhGAA to be enzymatically active was readily taken up by GSDII fibroblasts and in white blood cells from whole blood to reverse the defect. The tobrhGAA corrected the enzyme defect in tissues at 7 days after a single dose following intraperitoneal (IP) administration in GAA knockout (GAA(-/-)) mice. Additionally, we could purify the tobrhGAA since it bound tightly to the matrix of Sephadex G100 and can be eluted by competition with maltose. These data demonstrate indirectly that the tobrhGAA is fully functional, predominantly proteolytically cleaved and contains the minimal phosphorylation and mannose-6-phosphate residues essential for biological activity.

  8. Involvement of Agrobacterium tumefaciens Galacturonate Tripartite ATP-Independent Periplasmic (TRAP) Transporter GaaPQM in Virulence Gene Expression.

    Science.gov (United States)

    Zhao, Jinlei; Binns, Andrew N

    2016-02-15

    Monosaccharides capable of serving as nutrients for the soil bacterium Agrobacterium tumefaciens are also inducers of the vir regulon present in the tumor-inducing (Ti) plasmid of this plant pathogen. One such monosaccharide is galacturonate, the predominant monomer of pectin found in plant cell walls. This ligand is recognized by the periplasmic sugar binding protein ChvE, which interacts with the VirA histidine kinase that controls vir gene expression. Although ChvE is also a member of the ChvE-MmsAB ABC transporter involved in the utilization of many neutral sugars, it is not involved in galacturonate utilization. In this study, a putative tripartite ATP-independent periplasmic (TRAP) transporter, GaaPQM, is shown to be essential for the utilization of galacturonic acid; we show that residue R169 in the predicted sugar binding site of the GaaP is required for activity. The gene upstream of gaaPQM (gaaR) encodes a member of the GntR family of regulators. GaaR is shown to repress the expression of gaaPQM, and the repression is relieved in the presence of the substrate for GaaPQM. Moreover, GaaR is shown to bind putative promoter regions in the sequences required for galacturonic acid utilization. Finally, A. tumefaciens strains carrying a deletion of gaaPQM are more sensitive to galacturonate as an inducer of vir gene expression, while the overexpression of gaaPQM results in strains being less sensitive to this vir inducer. This supports a model in which transporter activity is crucial in ensuring that vir gene expression occurs only at sites of high ligand concentration, such as those at a plant wound site. Copyright © 2016, American Society for Microbiology. All Rights Reserved.

  9. Scanning tunneling microscopy study of GaAs(001) surfaces

    Science.gov (United States)

    Xue, Qi-Kun; Hashizume, T.; Sakurai, T.

    1999-03-01

    While GaAs(001) is the most commonly used substrate in fabrication of wireless and opto-electronic devices based on III-V compound semiconductors by molecular beam epitaxy (MBE), metallorganic chemical vapor deposition (MOCVD) and related techniques, its surface structure have been disputed since the beginning of development of the techniques. Invention of scanning tunneling microscopy (STM) has revolutionized the approach of surface/interface investigation, contributing greatly in the atomistic understanding of the GaAs surface phases. This paper reviews the STM studies of principal reconstructions, from As-rich c(4×4), 2×4, 2×6 to Ga-rich 4×2 and 4×6, found on the GaAs (001) surface. These studies, together with advanced theoretical efforts, have helped us to establish a unified structural model for various reconstructions, with which we can now explain most of the observations and long-standing controversies in atomic structures and surface stoichiometries.

  10. Magnetotransport Properties of Epitaxial Ge/AlAs Heterostructures Integrated on GaAs and Silicon.

    Science.gov (United States)

    Hudait, Mantu K; Clavel, Michael; Goley, Patrick S; Xie, Yuantao; Heremans, Jean J

    2015-10-14

    The magnetotransport properties of epitaxial Ge/AlAs heterostructures with different growth conditions and substrate architectures have been studied under ±9 T magnetic field and at 390 mK temperature. Systematic mobility measurements of germanium (Ge) epilayers grown on GaAs substrates at growth temperatures from 350 to 450 °C allow us to extract a precise growth window for device-quality Ge, corroborated by structural and morphological properties. Our results on Si substrate using a composite metamorphic AlAs/GaAs buffer at 400 °C Ge growth temperature, show that the Ge/AlAs system can be tailored to have a single carrier transport while keeping the charge solely in the Ge layer. Single carrier transport confined to the Ge layer is demonstrated by the weak-localization quantum correction to the conductivity observed at low magnetic fields and 390 mK temperature. The weak localization effect points to a near-absence of spin-orbit interaction for carriers in the electronically active layer and is used here for the first time to pinpoint Ge as this active layer. Thus, the epitaxial Ge grown on Si using AlAs/GaAs buffer architecture is a promising candidate for next-generation energy-efficient fin field-effect transistor applications.

  11. Weak interaction between germanene and GaAs(0001) by H intercalation: A route to exfoliation

    KAUST Repository

    Kaloni, Thaneshwor P.

    2013-11-13

    Epitaxial germanene on a semiconducting GaAs(0001) substrate is studied by ab initio calculations. The germanene-substrate interaction is found to be strong for direct contact but can be substantially reduced by H intercalation at the interface. Our results indicate that it is energetically possible to take the germanene off the GaAs(0001) substrate. While mounted on the substrate, the electronic structure shows a distinct Dirac cone shift above the Fermi energy with a splitting of 175 meV. On the other hand, we find for a free standing sheet a band gap of 24 meV, which is due to the intrinsic spin orbit coupling.

  12. Effect of thin intermediate-layer of InAs quantum dots on the physical properties of InSb films grown on (001) GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Ju Young [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Laser-IT Research Center, Korea Photonics Technology Institute, GwangJu 500-779 (Korea, Republic of); Song, Jin Dong, E-mail: jdsong@kist.re.kr [Nano Photonics Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of); Yang, Hae Suk, E-mail: hsyang@cau.ac.kr [Department of Physics, Chung-Ang University, Seoul 156-756 (Korea, Republic of)

    2012-08-31

    In this study the formation of a semiconducting InSb layer, preceded by the growth of an intermediate layer of InAs quantum dots, is attempted on (001) GaAs substrate. From the analysis of atomic-force-microscopy and transmission-electron-microscopy images together with Raman spectra of the InSb films, it is found that there exists a particular layer-thickness of {approx} 0.5 {mu}m above which the structural and transport qualities of the film are considerably enhanced. The resultant 2.60-{mu}m-thick InSb layer, grown at the substrate temperature of 400 Degree-Sign C and under the Sb flux of 1.5 Multiplication-Sign 10{sup -6} Torr, shows the electron mobility as high as 67,890 cm{sup 2}/Vs. - Highlights: Black-Right-Pointing-Pointer InSb films are grown on GaAs substrate by molecular beam epitaxy. Black-Right-Pointing-Pointer Intermediate layer of InAs quantum dots is inserted at GaAs/InSb interface. Black-Right-Pointing-Pointer Structural and transport properties of InSb are enhanced with InAs quantum dots. Black-Right-Pointing-Pointer Electron mobility over 50,000 cm{sup 2}/Vs is achieved within 1-{mu}m thickness of InSb.

  13. Photoelectrochemical Water Oxidation by GaAs Nanowire Arrays Protected with Atomic Layer Deposited NiO x Electrocatalysts

    Science.gov (United States)

    Zeng, Joy; Xu, Xiaoqing; Parameshwaran, Vijay; Baker, Jon; Bent, Stacey; Wong, H.-S. Philip; Clemens, Bruce

    2018-02-01

    Photoelectrochemical (PEC) hydrogen production makes possible the direct conversion of solar energy into chemical fuel. In this work, PEC photoanodes consisting of GaAs nanowire (NW) arrays were fabricated, characterized, and then demonstrated for the oxygen evolution reaction (OER). Uniform and periodic GaAs nanowire arrays were grown on a heavily n-doped GaAs substrates by metal-organic chemical vapor deposition selective area growth. The nanowire arrays were characterized using cyclic voltammetry and impedance spectroscopy in a non-aqueous electrochemical system using ferrocene/ferrocenium (Fc/Fc+) as a redox couple, and a maximum oxidation photocurrent of 11.1 mA/cm2 was measured. GaAs NW arrays with a 36 nm layer of nickel oxide (NiO x ) synthesized by atomic layer deposition were then used as photoanodes to drive the OER. In addition to acting as an electrocatalyst, the NiO x layer served to protect the GaAs NWs from oxidative corrosion. Using this strategy, GaAs NW photoanodes were successfully used for the oxygen evolution reaction. This is the first demonstration of GaAs NW arrays for effective OER, and the fabrication and protection strategy developed in this work can be extended to study any other nanostructured semiconductor materials systems for electrochemical solar energy conversion.

  14. Surface-engineered substrates for improved human pluripotent stem cell culture under fully defined conditions.

    Science.gov (United States)

    Saha, Krishanu; Mei, Ying; Reisterer, Colin M; Pyzocha, Neena Kenton; Yang, Jing; Muffat, Julien; Davies, Martyn C; Alexander, Morgan R; Langer, Robert; Anderson, Daniel G; Jaenisch, Rudolf

    2011-11-15

    The current gold standard for the culture of human pluripotent stem cells requires the use of a feeder layer of cells. Here, we develop a spatially defined culture system based on UV/ozone radiation modification of typical cell culture plastics to define a favorable surface environment for human pluripotent stem cell culture. Chemical and geometrical optimization of the surfaces enables control of early cell aggregation from fully dissociated cells, as predicted from a numerical model of cell migration, and results in significant increases in cell growth of undifferentiated cells. These chemically defined xeno-free substrates generate more than three times the number of cells than feeder-containing substrates per surface area. Further, reprogramming and typical gene-targeting protocols can be readily performed on these engineered surfaces. These substrates provide an attractive cell culture platform for the production of clinically relevant factor-free reprogrammed cells from patient tissue samples and facilitate the definition of standardized scale-up friendly methods for disease modeling and cell therapeutic applications.

  15. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    International Nuclear Information System (INIS)

    Liu Xuezhang; Wei Qiuping; Yu Zhiming; Yang Taiming; Zhai Hao

    2013-01-01

    Highlights: ► Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. ► The nucleation density was increased to 10 11 cm −2 . ► Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. ► Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp 3 -bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10 11 cm −2 , and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  16. Adherent diamond film deposited on Cu substrate by carbon transport from nanodiamond buried under Pt interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Liu Xuezhang [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); Wei Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yu Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha, 410083 (China); Yang Taiming; Zhai Hao [School of Materials Science and Engineering, Central South University, Changsha, 410083 (China)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Adherent polycrystalline diamond films were grown on copper substrate by carbon transport. Black-Right-Pointing-Pointer The nucleation density was increased to 10{sup 11} cm{sup -2}. Black-Right-Pointing-Pointer Diamond films were a composite structure of nano-crystalline diamond layer and micro-crystalline diamond layer. Black-Right-Pointing-Pointer Diamond nucleation was based by carbon dissolving from UDDs to Pt interlayer and formation of sp{sup 3}-bonded diamond clusters at the Pt surface. - Abstract: Diamond film deposited on Cu suffered from poor adhesion mainly due to the large mismatch of thermal expansion coefficients and the lack of affinity between carbon and Cu. Enhancing diamond nucleation by carbon transport from buried nanodiamond through a Pt ultrathin interlayer, adherent diamond film was then deposited on Cu substrate without distinctly metallic interlayer. This novel nucleation mechanism increased diamond nucleation density to 10{sup 11} cm{sup -2}, and developed diamond film with a composite structure of nano-crystalline diamond (NCD) layer and micro-crystalline diamond layer. Diamond film was characterized by the scanning electron microscope (SEM) and Raman spectroscope, respectively. The composition of diamond film/Cu substrate interface was examined by electron probe microanalysis (EPMA). The adhesion of diamond film was evaluated by indentation test. Those results show that a Pt ultrathin interlayer provides stronger chemically bonded interfaces and improve film adhesion.

  17. Pulsed laser heating of silicon-nitride capped GaAs: Optical properties at high temperature

    Science.gov (United States)

    Bhat, A.; Yao, H. D.; Compaan, A.; Horak, A.; Rys, A.

    1988-09-01

    The optical properties of silicon nitride and gallium arsenide were studied at temperatures up to and beyond the melting point of GaAs by means of laser heating. XeCl excimer and pulsed dye laser pulses, ˜10 ns in duration, were used to heat the semiconductor under nitride capping layers of varying thickness. The transient reflectivity response at 514.5 nm was used together with a multilayer interference analysis to obtain the optical constants of solid and molten GaAs and of solid Si3N4 near the 1513-K melting point of GaAs. In addition, we report the melt duration as a function of laser pulse energy for GaAs with and without capping layers.

  18. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium

    Science.gov (United States)

    Kim, Hyunseok; Ren, Dingkun; Farrell, Alan C.; Huffaker, Diana L.

    2018-02-01

    We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium (TEGa) precursor. Two-temperature growth of GaAs nanowires—nucleation at low temperature followed by nanowire elongation at high temperature—almost completely suppresses the radial overgrowth of nanowires on GaAs substrates while exhibiting a vertical growth yield of almost 100%. A 100% growth yield is also achieved on silicon substrates by terminating Si(111) surfaces by arsenic prior to the nanowire growth and optimizing the growth temperature. Compared with trimethylgallium (TMGa) which has been exclusively employed in the vapor–solid phase growth of GaAs nanowires by MOCVD, the proposed growth technique using TEGa is advantageous because of lower growth temperature and fully suppressed radial overgrowth. It is also known that GaAs grown by TEGa induce less impurity incorporation compared with TMGa, and therefore the proposed method could be a building block for GaAs nanowire-based high-performance optoelectronic and nanoelectronic devices on both III–V and silicon platforms.

  19. Optimization of selective area growth of GaAs by low pressure organometallic vapor phase epitaxy for monolithic integrated circuits

    Science.gov (United States)

    Kanber, H.; Bar, S. X.; Norris, P. E.; Beckham, C.; Pacer, M.

    1994-02-01

    GaAs MESFET device structures have been grown on silicon nitride or silicon dioxide masked 50 and 76 mm GaAs substrates by low pressure organometallic vapor phase epitaxy. Very smooth, featureless morphology and 100 percent selectivity of GaAs islands have been achieved over a range of growth conditions. Optimization of the GaAs p-buffer of the field effect transistor structure has led to improved device performance, including increased breakdown voltage. Device characteristics of the 0.5 μm gate low noise metal semiconductor field-effect transistors fabricated on these islands show good performance and wafer to wafer reproducibility on the second device lot.

  20. Substrate-Mediated Laser Ablation under Ambient Conditions for Spatially-Resolved Tissue Proteomics.

    Science.gov (United States)

    Fatou, Benoit; Wisztorski, Maxence; Focsa, Cristian; Salzet, Michel; Ziskind, Michael; Fournier, Isabelle

    2015-12-17

    Numerous applications of ambient Mass Spectrometry (MS) have been demonstrated over the past decade. They promoted the emergence of various micro-sampling techniques such as Laser Ablation/Droplet Capture (LADC). LADC consists in the ablation of analytes from a surface and their subsequent capture in a solvent droplet which can then be analyzed by MS. LADC is thus generally performed in the UV or IR range, using a wavelength at which analytes or the matrix absorb. In this work, we explore the potential of visible range LADC (532 nm) as a micro-sampling technology for large-scale proteomics analyses. We demonstrate that biomolecule analyses using 532 nm LADC are possible, despite the low absorbance of biomolecules at this wavelength. This is due to the preponderance of an indirect substrate-mediated ablation mechanism at low laser energy which contrasts with the conventional direct ablation driven by sample absorption. Using our custom LADC system and taking advantage of this substrate-mediated ablation mechanism, we were able to perform large-scale proteomic analyses of micro-sampled tissue sections and demonstrated the possible identification of proteins with relevant biological functions. Consequently, the 532 nm LADC technique offers a new tool for biological and clinical applications.

  1. Substrate-Mediated Laser Ablation under Ambient Conditions for Spatially-Resolved Tissue Proteomics

    Science.gov (United States)

    Fatou, Benoit; Wisztorski, Maxence; Focsa, Cristian; Salzet, Michel; Ziskind, Michael; Fournier, Isabelle

    2015-01-01

    Numerous applications of ambient Mass Spectrometry (MS) have been demonstrated over the past decade. They promoted the emergence of various micro-sampling techniques such as Laser Ablation/Droplet Capture (LADC). LADC consists in the ablation of analytes from a surface and their subsequent capture in a solvent droplet which can then be analyzed by MS. LADC is thus generally performed in the UV or IR range, using a wavelength at which analytes or the matrix absorb. In this work, we explore the potential of visible range LADC (532 nm) as a micro-sampling technology for large-scale proteomics analyses. We demonstrate that biomolecule analyses using 532 nm LADC are possible, despite the low absorbance of biomolecules at this wavelength. This is due to the preponderance of an indirect substrate-mediated ablation mechanism at low laser energy which contrasts with the conventional direct ablation driven by sample absorption. Using our custom LADC system and taking advantage of this substrate-mediated ablation mechanism, we were able to perform large-scale proteomic analyses of micro-sampled tissue sections and demonstrated the possible identification of proteins with relevant biological functions. Consequently, the 532 nm LADC technique offers a new tool for biological and clinical applications. PMID:26674367

  2. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E

    2006-01-01

    Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires

  3. n-Type Doping of Vapor–Liquid–Solid Grown GaAs Nanowires

    Directory of Open Access Journals (Sweden)

    Gutsche Christoph

    2011-01-01

    Full Text Available Abstract In this letter, n-type doping of GaAs nanowires grown by metal–organic vapor phase epitaxy in the vapor–liquid–solid growth mode on (111B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 1017 cm-3 to 2 × 1018 cm-3. The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal–insulator-semiconductor field-effect transistor devices.

  4. GaAs Refractive Index Dependence On Carrier Density and Optimizing Terahertz Devices

    Science.gov (United States)

    Kim, Christopher; Wu, Dong Ho; Graber, Benjamin

    GaAs is used for various applications, including high speed transistors, high-efficiency photovoltaic cells, electro-optics and terahertz (THz) emitters and detectors. To date, information on the refractive index of GaAs is available only over a limited wave spectrum of 0.2-17um, where the refractive index varies from 1.3 to 5.0. As detailed information on the refractive index of GaAs at THz frequencies is not available or inadequate for our effort to develop an improved GaAs-based THz emitter, we experimentally investigated the behavior of the refractive index of GaAs for different charge carrier densities, especially with or without the presence of surface plasma. Using a Time Domain THz Spectrometer, which is capable of measuring THz pulses containing a wave spectrum over 100-3000um with a time accuracy better than 6 femtoseconds, we measured the delay of THz pulses traversing through a GaAs substrate of known thickness while modulating the charge carrier concentration. From the experimental data we estimated the refractive index for THz frequencies to vary from 3.5 to 3.8 for different charge carrier concentrations. We will discuss details of our experiments and implications of our experimental results, especially for our GaAs-based THz devices.

  5. Mechanism of non-classical light emission from acoustically populated (311)A GaAs quantum wires

    Science.gov (United States)

    Lazić, S.; Hey, R.; Santos, P. V.

    2012-01-01

    We employ surface acoustic waves (SAWs) to control the transfer of photo-generated carriers between interconnected quantum wells and quantum wires (QWRs) grown on pre-patterned (311)A GaAs substrates. Optical studies, carried out under remote acoustic excitation of a single QWR, have shown sharp photoluminescence lines and antibunched photons with tunable emission energy. These features are attributed to recombination of acoustically transported carriers in potential inhomogeneities within the wire. The origin of the photon antibunching is discussed in terms of a ‘bottleneck’ in the number of carriers trapped in the QWR, which restricts the number of recombination events per SAW cycle. We propose a model for antibunching based on the trapping of carriers induced by the SAW piezoelectric field in states at the interface between the GaAs QWR and the AlGaAs barriers. Non-classical light is emitted during the subsequent release of the trapped carriers into the recombination centers within the wire. The spatial distribution of the emitting recombination centers is estimated using time-resolved measurements.

  6. Correlation between structural, optical, and electrical properties of self-assembled plasmonic nanostructures on the GaAs surface

    Energy Technology Data Exchange (ETDEWEB)

    Gladskikh, Polina V.; Gladskikh, Igor A.; Toropov, Nikita A., E-mail: nikita.a.toropov@gmail.com; Baranov, Mikhail A.; Vartanyan, Tigran A. [ITMO University (Russian Federation)

    2015-11-15

    Self-assembled silver nanostructures on the industry-grade monocrystalline GaAs (100) wafer surface were obtained via physical vapor deposition and characterized by optical reflection spectroscopy, scanning electron microscopy, and current–voltage curve measurements. Reflection spectra of the samples with Ag equivalent thicknesses of 5, 7.5, and 10 nm demonstrated wide plasmonic bands in the visible range of spectra. Thermal annealing of the nanostructures led to narrowing of the plasmonic bands caused by major transformations of the film morphology. While the As prepared films predominantly had a small-scale labyrinth structure, after annealing well-separated silver nanoislands are formed on the gallium arsenide surface. A clear correlation between films morphology and their optical and electrical properties is elucidated. Annealing of the GaAs substrate with Ag nanostructures at 100 °C under control of the resistivity allowed us to obtain and fix the structure at the percolation threshold. It is established that the samples at the percolation threshold possess the properties of resistance switching and hysteresis.Graphical Abstract.

  7. Anaerobic digestion of spent mushroom substrate under thermophilic conditions: performance and microbial community analysis.

    Science.gov (United States)

    Xiao, Zheng; Lin, Manhong; Fan, Jinlin; Chen, Yixuan; Zhao, Chao; Liu, Bin

    2018-01-01

    Spent mushroom substrate (SMS) is the residue of edible mushroom production occurring in huge amounts. The SMS residue can be digested for biogas production in the mesophilic anaerobic digestion. In the present study, performance of batch thermophilic anaerobic digestion (TAD) of SMS was investigated as well as the interconnected microbial population structure changes. The analyzed batch TAD process lasted for 12 days with the cumulative methane yields of 177.69 mL/g volatile solid (VS). Hydrolytic activities of soluble sugar, crude protein, and crude fat in SMS were conducted mainly in the initial phase, accompanied by the excessive accumulation of volatile fatty acids and low methane yield. Biogas production increased dramatically from days 4 to 6. The degradation rates of cellulose and hemicellulose were 47.53 and 55.08%, respectively. The high-throughput sequencing of 16S rRNA gene amplicons revealed that Proteobacteria (56.7%-62.8%) was the dominant phylum in different fermentative stages, which was highly specific compared with other anaerobic processes of lignocellulosic materials reported in the literature. Crenarchaeota was abundant in the archaea. The most dominant genera of archaea were retrieved as Methanothermobacter and Methanobacterium, but the latter decreased sharply with time. This study shows that TAD is a feasible method to handle the waste SMS.

  8. Jet formation in spallation of metal film from substrate under action of femtosecond laser pulse

    International Nuclear Information System (INIS)

    Inogamov, N. A.; Zhakhovskii, V. V.; Khokhlov, V. A.

    2015-01-01

    It is well known that during ablation by an ultrashort laser pulse, the main contribution to ablation of the substance is determined not by evaporation, but by the thermomechanical spallation of the substance. For identical metals and pulse parameters, the type of spallation is determined by film thickness d f . An important gauge is metal heating depth d T at the two-temperature stage, at which electron temperature is higher than ion temperature. We compare cases with d f < d T (thin film) and d f ≫ d T (bulk target). Radius R L of the spot of heating by an optical laser is the next (after d f ) important geometrical parameter. The morphology of film bulging in cases where d f < d T on the substrate (blistering) changes upon a change in radius R L in the range from diffraction limit R L ∼ λ to high values of R L ≫ λ, where λ ∼ 1 μm is the wavelength of optical laser radiation. When d f < d T , R L ∼ λ, and F abs > F m , gold film deposited on the glass target acquires a cupola-shaped blister with a miniature frozen nanojet in the form of a tip on the circular top of the cupola (F abs and F m are the absorbed energy and the melting threshold of the film per unit surface area of the film). A new physical mechanism leading to the formation of the nanojet is proposed

  9. Spin dynamics in GaAs and (110)-GaAs heterostructures; Spindynamik in GaAs und (110)-GaAs-Heterostrukturen

    Energy Technology Data Exchange (ETDEWEB)

    Oertel, Stefan

    2012-07-01

    This thesis investigates the spin dynamics in both bulk GaAs and (llO)GaAs heterostructures using time- and polarization-resolved photoluminescence spectroscopy. In bulk GaAs the spin relaxation t ime is measured for the first time in the high temperature regime from 280 K to 400 K and is compared to numerical calculations. The numerical calculations are based on the spin relaxation theory of the Dyakonov-Perel mechanism effected by momentum scattering with polar optical phonons and electron-electron scattering and are in good agreement with the experimental results. Measurements of the dependence on the electron density serve to determine the energy dependent proportional factor between the electron density and the effective electron-electron scattering time. Also in bulk GaAs the interaction between the electron spin system and the nuclear spin system is investigated. The measured electron Lande g-factor under the influence of the nuclear magnetic field is used as an indicator to monitor the temporal evolution of the nuclear magnetic field under sustained dynamic nuclear polarization. Measurements with polarization modulated excitation enable the determination of the relevant time scale at which dynamic nuclear polarization takes place. Furthermore, the temporal evolution of the measured electron Lande g-factor shows the complex interplay of the dynamic nuclear polarization, the nuclear spin diffusion and the nuclear spin relaxation. In symmetric (110)-GaAs quantum wells the dependence of the inplane anisotropy of the electron Lande g-factor on the quantum well thickness is determined experimentally. The measurements are in very good agreement with calculations based upon k . p-theory and reveal a maximum of the anisotropy at maximum carrier localization in the quantum well. The origin of the anisotropy that is not present in symmetric (001) quantum wells is qualitatively described by means of a simplified model based on fourth-order perturbation theory. A

  10. High performance resonant tunnelling structures on GaAs substrates

    Science.gov (United States)

    Riechert, H.; Bernklau, D.; Reithmaier, J.-P.; Schnell, R. D.

    1990-03-01

    GaAs-based resonant tunneling structures of high quality were grown by molecular beam epitaxy. Room temperature peak-to-valley ratios of 4.8 for a GaAs/AlGaAs double barrier quantum well, 4.1 for GaAs/AlGaAs with InGaAs quantum well and 5.9 for GaAs/AlGaAs with adjacent InGaAs 'prewell' were obtained, in connection with reasonable peak current densities.

  11. Organic matter composition and substrate diversity under elevated CO2 in the Mojave Desert

    Science.gov (United States)

    Tfaily, M. M.; Hess, N. J.; Koyama, A.; Evans, R. D.

    2016-12-01

    Little is known about how rising atmospheric CO2 concentration will impact long-term plant biomass or the dynamics of soil organic matter (SOM) in arid ecosystems. In this study, we investigated the change in the molecular composition of SOM by high resolution mass spectrometry after 10 years exposure to elevated atmospheric CO2 concentrations at the Nevada Desert FACE Facility. Samples were collected from soil profiles from 0 to 1m in 0.2m increments under the dominant evergreen shrub (Larrea tridentata). The differences in the composition of SOM were more evident in soils close to the surface and consistent with higher bulk soil organic carbon (C) and total nitrogen (N) concentrations under elevated than ambient CO2, reflecting increased net productivity of shrubs under elevated CO2, which could be attributed to increased litter input from above-ground biomass and/or shallow roots, root exudation and/or microbial residues. This was further supported by the significant increase in the abundance of amino sugars-, protein- and carbohydrate-like compounds. These compounds are involved in diverse pathways ranging from sugars and amino-acid metabolism to lipid biosynthesis. This indicates increased activity and metabolism under elevated CO2 and suggests that elevated CO2 have altered microbial C use patterns, reflecting changes in the quality and quantity of soil C inputs. A significant increase in the mineral-bound soil organic C was also observed in the surface soils under elevated CO2. This was accompanied by increased microbial residues as identified by mass spectrometry that supports microbial lipid analysis, and reflecting accelerated microbial turnover under elevated CO2. Fungal neutral lipid fatty acids (NLFA) abundance doubled under elevated CO2. When provided with excess labile compounds, such as root exudates, and with limited supply of nutrients, fungi assimilate the excess labile C and store it as NLFA likely contributing to increased total N

  12. Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Piñero, J.C., E-mail: josecarlos.pinero@uca.es [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Araújo, D.; Pastore, C.E.; Gutierrez, M. [Dpto. Ciencias de los Materiales, Universidad de Cádiz, 11510, Puerto Real, Cádiz (Spain); Frigeri, C. [Istituto CNR-IMEM Parco Area delle Scienze 37/A, Fontanini, 43010, Parma (Italy); Benali, A.; Lelièvre, J.F.; Gendry, M. [INL-Institut des Nanotechnologies de Lyon, UMR 5270 Ecole Centrale de Lyon 36, Avenue Guy de Collongue, 69134, Ecully Cedex (France)

    2017-02-15

    Highlights: • A TEM-HREM study of GaAs nanowires, growth over Si, is presented. • Misfit dislocations are detected in the Si/GaAs magma interface. • The study demonstrates strain relaxation through twin formation in some nanowires. - Abstract: To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are grown on <111> oriented Si substrates by molecular beam epitaxy (MBE) using vapor-liquid-solid (VLS) method. Transmission electron microscopy (TEM) analyses show that NWs are mainly grown alternating wurtzite and zinc blend (ZB) phases, and only few are purely ZB. On the latter, High Resolution Electron Microscopy (HREM) evidences the presence of twins near the surface of the NW showing limited concordance with the calculations of Yuan (2013) [1], where {111} twin planes in a <111>-oriented GaAs NW attain attractive interactions mediated by surface strain. In addition, such twins allow slight strain relaxation and are probably induced by the local huge elastic strain observed by HREM in the lattice between the twin and the surface. The latter is attributed to some slight bending of the NW as shown by the inversion of the strain from one side to the other side of the NW.

  13. Modeling of metal nanocluster growth on patterned substrates and surface pattern formation under ion bombardment

    Energy Technology Data Exchange (ETDEWEB)

    Numazawa, Satoshi

    2012-11-01

    This work addresses the metal nanocluster growth process on prepatterned substrates, the development of atomistic simulation method with respect to an acceleration of the atomistic transition states, and the continuum model of the ion-beam inducing semiconductor surface pattern formation mechanism. Experimentally, highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO{sub 2} surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well-separated. The first topic is the investigation of this growth process with a continuum theoretical approach to the surface gas condensation as well as an atomistic cluster growth model. The atomistic simulation model is a lattice-based kinetic Monte-Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag monomers and {approx}1 nm square surface migration ranges of Ag monomers. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns. The second topic specifies the acceleration scheme utilized in the metallic cluster growth model. Concerning the atomistic movements, a classical harmonic transition state theory is considered and applied in discrete lattice cells with hierarchical transition levels. The model results in an effective reduction of KMC simulation steps by utilizing a classification scheme of transition levels for thermally activated atomistic diffusion processes. Thermally activated atomistic movements

  14. Cellular, Molecular, and Genetic Substrates Underlying the Impact of Nicotine on Learning

    Science.gov (United States)

    Gould, Thomas J.; Leach, Prescott T.

    2013-01-01

    Addiction is a chronic disorder marked by long-lasting maladaptive changes in behavior and in reward system function. However, the factors that contribute to the behavioral and biological changes that occur with addiction are complex and go beyond reward. Addiction involves changes in cognitive control and the development of disruptive drug-stimuli associations that can drive behavior. A reason for the strong influence drugs of abuse can exert on cognition may be the striking overlap between the neurobiological substrates of addiction and of learning and memory, especially areas involved in declarative memory. Declarative memories are critically involved in the formation of autobiographical memories, and the ability of drugs of abuse to alter these memories could be particularly detrimental. A key structure in this memory system is the hippocampus, which is critically involved in binding multimodal stimuli together to form complex long-term memories. While all drugs of abuse can alter hippocampal function, this review focuses on nicotine. Addiction to tobacco products is insidious, with the majority of smokers wanting to quit; yet the majority of those that attempt to quit fail. Nicotine addiction is associated with the presence of drug-context and drug-cue associations that trigger drug seeking behavior and altered cognition during periods of abstinence, which contributes to relapse. This suggests that understanding the effects of nicotine on learning and memory will advance understanding and potentially facilitate treating nicotine addiction. The following sections examine: 1) how the effects of nicotine on hippocampus-dependent learning change as nicotine administration transitions from acute to chronic and then to withdrawal from chronic treatment and the potential impact of these changes on addiction, 2) how nicotine usurps the cellular mechanisms of synaptic plasticity, 3) the physiological changes in the hippocampus that may contribute to nicotine withdrawal

  15. Jet formation in spallation of metal film from substrate under action of femtosecond laser pulse

    Energy Technology Data Exchange (ETDEWEB)

    Inogamov, N. A., E-mail: nailinogamov@googlemail.com [Russian Academy of Sciences, Landau Institute for Theoretical Physics (Russian Federation); Zhakhovskii, V. V. [Dukhov All-Russia Research Institute of Automatics (Russian Federation); Khokhlov, V. A. [Russian Academy of Sciences, Landau Institute for Theoretical Physics (Russian Federation)

    2015-01-15

    It is well known that during ablation by an ultrashort laser pulse, the main contribution to ablation of the substance is determined not by evaporation, but by the thermomechanical spallation of the substance. For identical metals and pulse parameters, the type of spallation is determined by film thickness d{sub f}. An important gauge is metal heating depth d{sub T} at the two-temperature stage, at which electron temperature is higher than ion temperature. We compare cases with d{sub f} < d{sub T} (thin film) and d{sub f} ≫ d{sub T} (bulk target). Radius R{sub L} of the spot of heating by an optical laser is the next (after d{sub f}) important geometrical parameter. The morphology of film bulging in cases where d{sub f} < d{sub T} on the substrate (blistering) changes upon a change in radius R{sub L} in the range from diffraction limit R{sub L} ∼ λ to high values of R{sub L} ≫ λ, where λ ∼ 1 μm is the wavelength of optical laser radiation. When d{sub f} < d{sub T}, R{sub L} ∼ λ, and F{sub abs} > F{sub m}, gold film deposited on the glass target acquires a cupola-shaped blister with a miniature frozen nanojet in the form of a tip on the circular top of the cupola (F{sub abs} and F{sub m} are the absorbed energy and the melting threshold of the film per unit surface area of the film). A new physical mechanism leading to the formation of the nanojet is proposed.

  16. Neural substrates of cognitive control under the belief of getting neurofeedback training

    Directory of Open Access Journals (Sweden)

    Manuel eNinaus

    2013-12-01

    Full Text Available Learning to modulate one’s own brain activity is the fundament of neurofeedback (NF applications. Besides the neural networks directly involved in the generation and modulation of the neurophysiological parameter being specifically trained, more general determinants of NF efficacy such as self-referential processes and cognitive control have been frequently disregarded. Nonetheless, deeper insight into these cognitive mechanisms and their neuronal underpinnings sheds light on various open NF related questions concerning individual differences, brain-computer interface (BCI illiteracy as well as a more general model of NF learning. In this context, we investigated the neuronal substrate of these more general regulatory mechanisms that are engaged when participants believe that they are receiving NF. Twenty healthy participants (40-63 years, 10 female performed a sham NF paradigm during fMRI scanning. All participants were novices to NF-experiments and were instructed to voluntarily modulate their own brain activity based on a visual display of moving color bars. However, the bar depicted a recording and not the actual brain activity of participants. Reports collected at the end of the experiment indicate that participants were unaware of the sham feedback. In comparison to a passive watching condition, bilateral insula, anterior cingulate cortex and supplementary motor and dorsomedial and lateral prefrontal area were activated when participants actively tried to control the bar. In contrast, when merely watching moving bars, increased activation in the left angular gyrus was observed. These results show that the intention to control a moving bar is sufficient to engage a broad frontoparietal and cingulo-opercular network involved in cognitive control. The results of the present study indicate that tasks such as those generally employed in NF training recruit the neuronal correlates of cognitive control even when only sham NF is presented.

  17. Neural substrates of cognitive control under the belief of getting neurofeedback training.

    Science.gov (United States)

    Ninaus, Manuel; Kober, Silvia E; Witte, Matthias; Koschutnig, Karl; Stangl, Matthias; Neuper, Christa; Wood, Guilherme

    2013-01-01

    Learning to modulate one's own brain activity is the fundament of neurofeedback (NF) applications. Besides the neural networks directly involved in the generation and modulation of the neurophysiological parameter being specifically trained, more general determinants of NF efficacy such as self-referential processes and cognitive control have been frequently disregarded. Nonetheless, deeper insight into these cognitive mechanisms and their neuronal underpinnings sheds light on various open NF related questions concerning individual differences, brain-computer interface (BCI) illiteracy as well as a more general model of NF learning. In this context, we investigated the neuronal substrate of these more general regulatory mechanisms that are engaged when participants believe that they are receiving NF. Twenty healthy participants (40-63 years, 10 female) performed a sham NF paradigm during fMRI scanning. All participants were novices to NF-experiments and were instructed to voluntarily modulate their own brain activity based on a visual display of moving color bars. However, the bar depicted a recording and not the actual brain activity of participants. Reports collected at the end of the experiment indicate that participants were unaware of the sham feedback. In comparison to a passive watching condition, bilateral insula, anterior cingulate cortex and supplementary motor and dorsomedial and lateral prefrontal areas were activated when participants actively tried to control the bar. In contrast, when merely watching moving bars, increased activation in the left angular gyrus was observed. These results show that the intention to control a moving bar is sufficient to engage a broad frontoparietal and cingulo-opercular network involved in cognitive control. The results of the present study indicate that tasks such as those generally employed in NF training recruit the neuronal correlates of cognitive control even when only sham NF is presented.

  18. Near-field microwave detection of corrosion precursor pitting under thin dielectric coatings in metallic substrate

    International Nuclear Information System (INIS)

    Hughes, D.; Zoughi, R.; Austin, R.; Wood, N.; Engelbart, R.

    2003-01-01

    Detection of corrosion precursor pitting on metallic surfaces under various coatings and on bare metal is of keen interest in evaluation of aircraft fuselage. Near-field microwave nondestructive testing methods, utilizing open-ended rectangular waveguides and coaxial probes, have been used extensively for detection of surface flaws in metals, both on bare metal and under a dielectric coating. This paper presents the preliminary results of using microwave techniques to detect corrosion precursor pitting under paint and primer, applique and on bare metal. Machined pits of 500 μm diameter were detected using open-ended rectangular waveguides at V-Band under paint and primer and applique, and on bare metal. Using coaxial probes, machined pits with diameters down to 150 μm on bare metal were also detected. Relative pit size and density were shown on a corrosion-pitted sample using open-ended rectangular waveguides at frequencies of 35 GHz to 70 GHz. The use of Boeing's MAUS TM scanning systems provided improved results by alleviating standoff variation and scanning artifact. Typical results of this investigation are also presented

  19. Magnetic Properties of Fe(001) Thin Films on GaAs(001) Deposited by RF Magnetron Sputtering

    International Nuclear Information System (INIS)

    Ikeya, Hirokazu; Takahashi, Yutaka; Inaba, Nobuyuki; Kirino, Fumiyoshi; Ohtake, Mitsuru; Futamoto, Masaaki

    2011-01-01

    Fe thin films, down to 6 nm thick, were prepared on GaAs(001) substrates by RF magnetron sputtering. The x-ray diffraction (XRD) analyses show that the epitaxial thin films of Fe(001) were grown with cube-on-cube orientation on GaAs(001). Magnetic properties were investigated by vibrating sample magnetometry (VSM) and ferromagnetic resonance (FMR) spectroscopy. The magnetization curves obtained by applying in-plane magnetic fields indicate that easy (hard) direction is along [100] ([110]) and the saturation magnetization is close to the bulk values. The in-plane magnetic anisotropy measured by FMR shows four-fold symmetry, as expected for bcc Fe. We did not observe the in-plane uniaxial magnetic anisotropy reported on the MBE-grown Fe films on GaAs substrates.

  20. Structural and optical properties of GaAs(100) with a thin surface layer doped with chromium

    Energy Technology Data Exchange (ETDEWEB)

    Seredin, P. V., E-mail: paul@phys.vsu.ru; Fedyukin, A. V. [Voronezh State University (Russian Federation); Arsentyev, I. N.; Vavilova, L. S.; Tarasov, I. S. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Prutskij, T. [Benemérita Universidad Autonoma de Puebla, Instituto de Ciencias (Mexico); Leiste, H.; Rinke, M. [Karlsruhe Nano Micro Facility (Germany)

    2016-07-15

    The aim of this study is to explore the structural and optical properties of single-crystal GaAs(100) doped with Cr atoms by burning them into the substrate at high temperatures. The diffusion of chromium into single-crystal GaAs(100) substrates brings about the formation of a thin (~20–40 μm) GaAs:Cr transition layer. In this case, chromium atoms are incorporated into the gallium-arsenide crystal lattice and occupy the regular atomic sites of the metal sublattice. As the chromium diffusion time is increased, such behavior of the dopant impurity yields changes in the energy structure of GaAs, a decrease in the absorption at free charge carriers, and a lowering of the surface recombination rate. As a result, the photoluminescence signal from the sample is significantly enhanced.

  1. Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

    Directory of Open Access Journals (Sweden)

    Marietta Seifert

    2015-12-01

    Full Text Available Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

  2. Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

    Science.gov (United States)

    Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

    2015-12-19

    Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

  3. Mapping Common Aphasia Assessments to Underlying Cognitive Processes and Their Neural Substrates.

    Science.gov (United States)

    Lacey, Elizabeth H; Skipper-Kallal, Laura M; Xing, Shihui; Fama, Mackenzie E; Turkeltaub, Peter E

    2017-05-01

    Understanding the relationships between clinical tests, the processes they measure, and the brain networks underlying them, is critical in order for clinicians to move beyond aphasia syndrome classification toward specification of individual language process impairments. To understand the cognitive, language, and neuroanatomical factors underlying scores of commonly used aphasia tests. Twenty-five behavioral tests were administered to a group of 38 chronic left hemisphere stroke survivors and a high-resolution magnetic resonance image was obtained. Test scores were entered into a principal components analysis to extract the latent variables (factors) measured by the tests. Multivariate lesion-symptom mapping was used to localize lesions associated with the factor scores. The principal components analysis yielded 4 dissociable factors, which we labeled Word Finding/Fluency, Comprehension, Phonology/Working Memory Capacity, and Executive Function. While many tests loaded onto the factors in predictable ways, some relied heavily on factors not commonly associated with the tests. Lesion symptom mapping demonstrated discrete brain structures associated with each factor, including frontal, temporal, and parietal areas extending beyond the classical language network. Specific functions mapped onto brain anatomy largely in correspondence with modern neural models of language processing. An extensive clinical aphasia assessment identifies 4 independent language functions, relying on discrete parts of the left middle cerebral artery territory. A better understanding of the processes underlying cognitive tests and the link between lesion and behavior may lead to improved aphasia diagnosis, and may yield treatments better targeted to an individual's specific pattern of deficits and preserved abilities.

  4. Testing a GaAs cathode in SRF gun

    International Nuclear Information System (INIS)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-01-01

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10 -12 Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to ∼10 -9 Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating

  5. Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

    Science.gov (United States)

    Li, Lixia; Pan, Dong; Yu, Xuezhe; So, Hyok; Zhao, Jianhua

    2017-10-01

    Self-catalyzed GaAs nanowires (NWs) are grown on Si (111) substrates by molecular-beam epitaxy. The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated. For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter, the NWs grow vertically to the substrate surface. In contrast, when the As cell shutter is closed first, maintaining the Ga flux is found to be critical for the following growth of GaAs NWs, which can change the growth direction from [111] to . The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences. Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. Project supported partly by the MOST of China (No. 2015CB921503), the National Natural Science Foundation of China (Nos. 61504133, 61334006, 61404127), and Youth Innovation Promotion Association, CAS (No. 2017156).

  6. Stress variations due to microcracks in GaAs grown on Si

    Science.gov (United States)

    Yacobi, B. G.; Zemon, S.; Norris, P.; Jagannath, C.; Sheldon, P.

    1987-12-01

    Luminescence studies of thick (≥5 μm) GaAs epitaxial layers grown on Si substrates reveal regions of nonuniform stress associated with the presence of microcracks. Using cathodoluminescence spectroscopy as a tool for microcharacterization, the magnitude of the stress, derived from the peak positions of the luminescence spectra, is shown to increase gradually as a function of distance from the intersection of two microcracks. The greatest degree of stress relief was found at this intersection.

  7. Femtosecond differential transmission measurements on low temperature GaAs metal-semiconductor-metal structures

    DEFF Research Database (Denmark)

    Keil, Ulrich Dieter Felix; Hvam, Jørn Märcher; Tautz, S.

    1997-01-01

    We report on differential transmission measurements on low temperature grown (LT)-GaAs with and without applied electrical fields at different wavelengths. Electrical fields up to 100 kV/cm can be applied via an interdigitated contact structure to our LT GaAs samples which have been removed from....... The response time of a biased metal-semiconductor-metal detector, therefore, exceeds the carrier life time of the substrate material. (C) 1997 American Institute of Physics....

  8. Growth of ZnO thin films on GaAs by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Elders, J.; Gardeniers, Johannes G.E.; Geretovsky, J.; Boyd, Ian W.

    1995-01-01

    ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full

  9. Electrical properties of spin coated ultrathin titanium oxide films on GaAs

    Science.gov (United States)

    Dutta, Shankar; Pal, Ramjay; Chatterjee, Ratnamala

    2015-04-01

    In recent years, ultrathin (MOS) technology. This paper discusses deposition of ultrathin TiO2 films (˜10 nm) on GaAs substrates (one sulfur-passivated, another unpassivated) by spin coating technique. The sulfur passivation is done to reduce the surface states of GaAs substrate. After annealing at 400 °C in a nitrogen environment, the TiO2 films are found to be polycrystalline in nature with rutile phase. The TiO2 films exhibit consistent grain size of 10-20 nm with thickness around 10-12 nm. Dielectric constants of the films are found to be 65.4 and 47.1 corresponding to S-passivated and unpassivated substrates, respectively. Corresponding threshold voltages of the MOS structures are measured to be -0.1 V to -0.3 V for the S-passivated and unpassivated samples, respectively. The S-passivated TiO2 film showed improved (lower) leakage current density (5.3 × 10-4 A cm-2 at 3 V) compared to the unpassivated film (1.8 × 10-3 A/cm2 at 3 V). Dielectric breakdown-field of the TiO2 films on S-passivated and unpassivated GaAs samples are found to be 8.4 MV cm-1 and 7.2 MV cm-1 respectively.

  10. Relation between morphology and work function of metals deposited on organic substrates

    Science.gov (United States)

    Kampen, T. U.; Das, A.; Park, S.; Hoyer, W.; Zahn, D. R. T.

    2004-07-01

    Ultraviolet photoemission spectroscopy (UPS) is employed to determine the work function of silver and indium films grown on two perylene derivatives, dimethylen-3, 4, 9, 10-perylenetetracarboxyiimide (DiMe-PTCDI) and 3, 4, 9, 10-perylenetetracarboxylic dianhydride (PTCDA). The PTCDA and DiMe-PTCDI substrates were prepared as thick organic layers on sulphur passivated GaAs(0 0 1), where the molecular planes of PTCDA and DiMe-PTCDI are parallel and tilted with respect to the substrate surface, respectively. The crystalline structure of the evaporated metal layers is investigated using X-ray diffraction (XRD) and is found to be strongly dependent on the underlying organic substrate. Correspondingly, work functions are found to be different by more than 200 meV in agreement with the crystalline orientation of the metal films.

  11. In situ transmission electron microscopy analyses of thermally annealed self catalyzed GaAs nanowires grown by molecular beam epitaxy

    DEFF Research Database (Denmark)

    Ambrosini, S.; Wagner, Jakob Birkedal; Booth, Tim

    2011-01-01

    Self catalyzed GaAs nanowires grown on Si-treated GaAs substrates were studied with a transmission electron microscope before and after annealing at 600◦C. At room temperature the nanowires have a zincblende structure and are locally characterized by a high density of rotational twins and stackin...... faults. Selected area diffraction patterns and high-resolution transmission electron microscopy images show that nanowires undergo structural modifications upon annealing, suggesting a decrease of defect density following the thermal treatment....

  12. Ex situ protection of the European mudminnow (Umbra krameri Walbaum, 1792: Spawning substrate preference for larvae rearing under controlled conditions

    Directory of Open Access Journals (Sweden)

    Kucska Balázs

    2016-01-01

    Full Text Available Captive breeding programs of endangered fish species, such as the European mudminnow Umbra krameri, are essential for population restoration. To improve captive spawning and larvae rearing under controlled conditions, two experiments were carried out. In the first, the spawning substrate preference was tested in triplicate, where five different types of artificial surface were provided for mudminnow pairs:(isand, (iiartificial plants, (iiigravel, (ivsand + artificial plants and(vgravel + artificial plants. All fish preferred the gravel + artificial plant combination, which indicates that this type of surface could be the most appropriate for spawning in captivity. In the second trial, three feeding protocols were tested in triplicate under controlled conditions. In the first treatment fish were fed exclusively with Artemia nauplii; in the second treatment fish were fed with Artemiafor the first ten days then Artemia was gradually replaced with dry feed; for the third group the transition period started after 5 days of Artemia feeding. Although the survival rate of larvae could be maintained at a high level in some of the feeding protocols, a strong decrease in the growth rate was obvious in all diets containing dry food, which means that live food is essential for the first three weeks of mudminnow larvae rearing.

  13. Statistical assessment of dumpsite soil suitability to enhance methane bio-oxidation under interactive influence of substrates and temperature.

    Science.gov (United States)

    Bajar, Somvir; Singh, Anita; Kaushik, C P; Kaushik, Anubha

    2017-05-01

    Biocovers are considered as the most effective and efficient way to treat methane (CH 4 ) emission from dumpsites and landfills. Active methanotrophs in the biocovers play a crucial role in reduction of emissions through microbiological methane oxidation. Several factors affecting methane bio-oxidation (MOX) have been well documented, however, their interactive effect on the oxidation process needs to be explored. Therefore, the present study was undertaken to investigate the suitability of a dumpsite soil to be employed as biocover, under the influence of substrate concentrations (CH 4 and O 2 ) and temperature at variable incubation periods. Statistical design matrix of Response Surface Methodology (RSM) revealed that MOX rate up to 69.58μgCH 4 g -1 dw h -1 could be achieved under optimum conditions. MOX was found to be more dependent on CH 4 concentration at higher level (30-40%, v/v), in comparison to O 2 concentration. However, unlike other studies MOX was found in direct proportionality relationship with temperature within a range of 25-35°C. The results obtained with the dumpsite soil biocover open up a new possibility to provide improved, sustained and environmental friendly systems to control even high CH 4 emissions from the waste sector. Copyright © 2017 Elsevier Ltd. All rights reserved.

  14. Application of low magnetic field on inulinase production by Geotrichum candidum under solid state fermentation using leek as substrate.

    Science.gov (United States)

    Canli, Ozden; Kurbanoglu, Esabi Basaran

    2012-11-01

    This study evaluates the application of low magnetic field (LMF) on inulinase enzyme production by Geotrichum candidum under solid state fermentation (SSF) using leek as potential carbon source. First, the fermentation conditions were optimized using normal magnetic field grown microorganism. Among eight G. candidum isolates, the most effective strain called G. candidum OC-7 was selected to use in further experiments. In the second part of the study, SSF was carried out under different LMFs (4 and 7 mT). The results showed that inulinase activity was strongly affected by LMF application. The highest enzyme activity was obtained as 535.2 U/g of dry substrate (gds) by 7 mT magnetic field grown G. candidum OC-7. On the contrary, the control had only 412.1 U/gds. Consequently, the use of leek presents a great potential as an alternative carbon source for inulinase production and magnetic field treatment could effectively be used in order to enhance the enzyme production.

  15. Toward Improved Lifetimes of Organic Solar Cells under Thermal Stress: Substrate-Dependent Morphological Stability of PCDTBT:PCBM Films and Devices

    Science.gov (United States)

    Li, Zhe; Ho Chiu, Kar; Shahid Ashraf, Raja; Fearn, Sarah; Dattani, Rajeev; Cheng Wong, Him; Tan, Ching-Hong; Wu, Jiaying; Cabral, João T.; Durrant, James R.

    2015-10-01

    Morphological stability is a key requirement for outdoor operation of organic solar cells. We demonstrate that morphological stability and lifetime of polymer/fullerene based solar cells under thermal stress depend strongly on the substrate interface on which the active layer is deposited. In particular, we find that the stability of benchmark PCDTBT/PCBM solar cells under modest thermal stress is substantially increased in inverted solar cells employing a ZnO substrate compared to conventional devices employing a PEDOT:PSS substrate. This improved stability is observed to correlate with PCBM nucleation at the 50 nm scale, which is shown to be strongly influenced by different substrate interfaces. Employing this approach, we demonstrate remarkable thermal stability for inverted PCDTBT:PC70BM devices on ZnO substrates, with negligible (stress and minimal thermally induced “burn-in” effect. We thus conclude that inverted organic solar cells, in addition to showing improved environmental stability against ambient humidity exposure as widely reported previously, can also demonstrate enhanced morphological stability. As such we show that the choice of suitable substrate interfaces may be a key factor in achieving prolonged lifetimes for organic solar cells under thermal stress conditions.

  16. Growth, strain relaxation properties and high-κ dielectric integration of mixed-anion GaAs1-ySby metamorphic materials

    Science.gov (United States)

    Zhu, Y.; Clavel, M.; Goley, P.; Hudait, M. K.

    2014-10-01

    Mixed-anion, GaAs1-ySby metamorphic materials with a wide range of antimony (Sb) compositions extending from 15% to 62%, were grown by solid source molecular beam epitaxy (MBE) on GaAs substrates. The impact of different growth parameters on the Sb composition in GaAs1-ySby materials was systemically investigated. The Sb composition was well-controlled by carefully optimizing the As/Ga ratio, the Sb/Ga ratio, and the substrate temperature during the MBE growth process. High-resolution x-ray diffraction demonstrated a quasi-complete strain relaxation within each composition of GaAs1-ySby. Atomic force microscopy exhibited smooth surface morphologies across the wide range of Sb compositions in the GaAs1-ySby structures. Selected high-κ dielectric materials, Al2O3, HfO2, and Ta2O5 were deposited using atomic layer deposition on the GaAs0.38Sb0.62 material, and their respective band alignment properties were investigated by x-ray photoelectron spectroscopy (XPS). Detailed XPS analysis revealed a valence band offset of >2 eV for all three dielectric materials on GaAs0.38Sb0.62, indicating the potential of utilizing these dielectrics on GaAs0.38Sb0.62 for p-type metal-oxide-semiconductor (MOS) applications. Moreover, both Al2O3 and HfO2 showed a conduction band offset of >2 eV on GaAs0.38Sb0.62, suggesting these two dielectrics can also be used for n-type MOS applications. The well-controlled Sb composition in several GaAs1-ySby material systems and the detailed band alignment analysis of multiple high-κ dielectric materials on a fixed Sb composition, GaAs0.38Sb0.62, provides a pathway to utilize GaAs1-ySby materials in future microelectronic and optoelectronic applications.

  17. Use of zinc diffusion into GaAs for determining properties of gallium interstitials

    Science.gov (United States)

    Bösker, G.; Stolwijk, N. A.; Hettwer, H.-G.; Rucki, A.; Jäger, W.; Södervall, U.

    1995-10-01

    The fast diffusion of Zn into GaAs has recently been attributed to a minor fraction of Zn interstitials changing over to Ga sites thereby producing interstitial Ga (IGa). This kick-out reaction provides the possibility to determine IGa transport properties from Zn diffusion experiments in virtually perfect GaAs but previous attempts were frustrated by diffusion-induced generation of microstructural defects acting as IGa sinks. The present study prevents such defect formation by utilizing Zn-doped GaAs powder as the diffusion source. Measured two-stage profiles show that under these conditions Zn diffusion at 906 °C is controlled by I3+Ga in addition to I2+Ga. Analysis of the profiles yield quantitative data on Ga- and Zn-related diffusivities, concentrations of IGa as well as the corresponding electronic transition energy.

  18. Electronic structure of (In,Mn)As quantum dots buried in GaAs investigated by soft-x-ray ARPES.

    Science.gov (United States)

    Bouravleuv, A D; Lev, L L; Piamonteze, C; Wang, X; Schmitt, T; Khrebtov, A I; Samsonenko, Yu B; Kanski, J; Cirlin, G E; Strocov, V N

    2016-10-21

    Electronic structure of a molecular beam epitaxy-grown system of (In,Mn)As quantum dots (QDs) buried in GaAs is explored with soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) using photon energies around 1 keV. This technique, ideally suited for buried systems, extends the momentum-resolving capabilities of conventional ARPES with enhanced probing depth as well as elemental and chemical state specificity achieved with resonant photoexcitation. The experimental results resolve the dispersive energy bands of the GaAs substrate buried in ∼2 nm below the surface, and the impurity states (ISs) derived from the substitutional Mn atoms in the (In,Mn)As QDs and oxidized Mn atoms distributed near the surface. An energy shift of the Mn ISs in the QDs compared to (In,Mn)As DMS is attributed to the band offset and proximity effect at the interface with the surrounding GaAs. The absence of any ISs in the vicinity of the VBM relates the electron transport in (In,Mn)As QDs to the prototype (In,Mn)As diluted magnetic semiconductor. The SX-ARPES results are supported by measurements of the shallow core levels under variation of probing depth through photon energy. X-ray absorption measurements identify significant diffusion of interstitial Mn atoms out of the QDs towards the surface, and the role of magnetic circular dichroism is to block the ferromagnetic response of the (In,Mn)As QDs. Possible routes are drawn to tune the growth procedure aiming at practical applications of the (In,Mn)As based systems.

  19. Inducer-independent production of pectinases in Aspergillus niger by overexpression of the D-galacturonic acid-responsive transcription factor gaaR.

    Science.gov (United States)

    Alazi, Ebru; Knetsch, Tim; Di Falco, Marcos; Reid, Ian D; Arentshorst, Mark; Visser, Jaap; Tsang, Adrian; Ram, Arthur F J

    2018-03-01

    The transcription factor GaaR is needed for the expression of genes required for pectin degradation and transport and catabolism of the main degradation product, D-galacturonic acid (GA) in Aspergillus niger. In this study, we used the strong constitutive gpdA promoter of Aspergillus nidulans to overexpress gaaR in A. niger. Overexpression of gaaR resulted in an increased transcription of the genes encoding pectinases, (putative) GA transporters, and catabolic pathway enzymes even under non-inducing conditions, i.e., in the absence of GA. Exoproteome analysis of a strain overexpressing gaaR showed that this strain secretes highly elevated levels of pectinases when grown in fructose. The genes encoding exo-polygalacturonases were found to be subjected to CreA-mediated carbon catabolite repression, even in the presence of fructose. Deletion of creA in the strain overexpressing gaaR resulted in a further increase in pectinase production in fructose. We showed that GaaR localizes mainly in the nucleus regardless of the presence of an inducer, and that overexpression of gaaR leads to an increased concentration of GaaR in the nucleus.

  20. Diffraction anomalous fine-structure study of strained Ga1-xInxAs on GaAs(001)

    International Nuclear Information System (INIS)

    Woicik, J.C.; Cross, J.O.; Bouldin, C.E.; Ravel, B.; Pellegrino, J.G.; Steiner, B.; Bompadre, S.G.; Sorensen, L.B.; Miyano, K.E.; Kirkland, J.P.

    1998-01-01

    Diffraction anomalous fine-structure measurements performed at both the Ga and As K edges have determined the Ga-As bond length to be 2.442±0.005thinsp Angstrom in a buried, 213-Angstrom-thick Ga 0.785 In 0.215 As layer grown coherently on GaAs(001). This bond length corresponds to a strain-induced contraction of 0.013±0.005thinsp Angstrom relative to the Ga-As bond length in bulk Ga 1-x In x As of the same composition. Together with recent extended x-ray-absorption fine-structure measurements performed at the In K edge [Woicik et al., Phys. Rev. Lett. 79, 5026 (1997)], excellent agreement is found with the uniform bond-length distortion model for strained-layer semiconductors on (001) substrates. copyright 1998 The American Physical Society

  1. Surface optical phonons in GaAs nanowires grown by Ga-assisted chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    García Núñez, C., E-mail: carlos.garcia@uam.es; Braña, A. F.; Pau, J. L.; Ghita, D.; García, B. J. [Grupo de Electrónica y Semiconductores, Departamento de Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Shen, G.; Wilbert, D. S.; Kim, S. M.; Kung, P. [Department of Electrical and Computer Engineering, The University of Alabama, Tuscaloosa, Alabama 35487 (United States)

    2014-01-21

    Surface optical (SO) phonons were studied by Raman spectroscopy in GaAs nanowires (NWs) grown by Ga-assisted chemical beam epitaxy on oxidized Si(111) substrates. NW diameters and lengths ranging between 40 and 65 nm and between 0.3 and 1.3 μm, respectively, were observed under different growth conditions. The analysis of the Raman peak shape associated to either longitudinal or surface optical modes gave important information about the crystal quality of grown NWs. Phonon confinement model was used to calculate the density of defects as a function of the NW diameter resulting in values between 0.02 and 0.03 defects/nm, indicating the high uniformity obtained on NWs cross section size during growth. SO mode shows frequency downshifting as NW diameter decreases, this shift being sensitive to NW sidewall oxidation. The wavevector necessary to activate SO phonon was used to estimate the NW facet roughness responsible for SO shift.

  2. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    Abstract. GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand character- ization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space.

  3. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    GaAs solar cells hold the record for the highest single band-gap cell efficiency. Successful application of these cells in advanced space-borne systems demand characterization of cell properties like dark current under different ambient conditions and the stability of the cells against particle irradiation in space. In this paper ...

  4. Comparison of hydrogen and acetate as substrates for the reductive immobilization of uranium under in-situ pressure

    Science.gov (United States)

    Heuston, Daniel Jon

    Complete baseline restoration at in-situ recovery (ISR) uranium (U) mining sites has proven difficult through conventional methods. Bioremediation by means of reductive immobilization of soluble U(VI) to insoluble U(IV) is currently being investigated as a secondary restoration method. Various organic substrates have been used in many U bioremediation studies and applications. However, the oxidation of organic substrates increases total inorganic carbon concentrations (TIC) due to the respiration of heterotrophic bacteria. It is widely accepted that U forms stable complexes with carbonate that in turn lower the thermodynamic redox potential at which the U(VI)/U(IV) couple takes place. In this study, it was hypothesized that greater U reductive immobilization would be achieved with hydrogen (H2) as an electron donor compared to that with acetate (Ac) because H2 would select for autotrophic bacteria that would decrease TIC. The hypothesis was tested by supplying H 2 and Ac at the same reductive capacity to continuous-flow sediment-columns. Unlike previous studies, the columns were operated at pressures representative of the in-situ conditions at ISR mining sites. The experimental results indicated that effluent TIC and U concentrations were both significantly lower for the H2-supplied column than for the Ac-supplied column. Comparison of the experimental data to theoretical speciation indicated by a pE-versus-pH diagram revealed that the benefit of U solubility decreasing at lower TIC is only gained when the pH is held constant. However, a lower TIC and a constant pH were not realized in the H2 column due to the dynamics of the pH/alkalinity/total carbonate/CaCO 3 system. Nevertheless, based on prevailing theory, it was speculated that the superior U removal in the H2-supplied column may have been attributed to the presence of kinetically-limited Fe(OH)3 under the prevailing pE and pH conditions of the respective H2 and Ac columns. However, in the absence of sediment

  5. Heterojunction Diodes and Solar Cells Fabricated by Sputtering of GaAs on Single Crystalline Si

    Directory of Open Access Journals (Sweden)

    Santiago Silvestre

    2015-04-01

    Full Text Available This work reports fabrication details of heterojunction diodes and solar cells obtained by sputter deposition of amorphous GaAs on p-doped single crystalline Si. The effects of two additional process steps were investigated: A hydrofluoric acid (HF etching treatment of the Si substrate prior to the GaAs sputter deposition and a subsequent annealing treatment of the complete layered system. A transmission electron microscopy (TEM exploration of the interface reveals the formation of a few nanometer thick SiO2 interface layer and some crystallinity degree of the GaAs layer close to the interface. It was shown that an additional HF etching treatment of the Si substrate improves the short circuit current and degrades the open circuit voltage of the solar cells. Furthermore, an additional thermal annealing step was performed on some selected samples before and after the deposition of an indium tin oxide (ITO film on top of the a-GaAs layer. It was found that the occurrence of surface related defects is reduced in case of a heat treatment performed after the deposition of the ITO layer, which also results in a reduction of the dark saturation current density and resistive losses.

  6. Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures.

    Science.gov (United States)

    Lysov, A; Offer, M; Gutsche, C; Regolin, I; Topaloglu, S; Geller, M; Prost, W; Tegude, F-J

    2011-02-25

    We present GaAs electroluminescent nanowire structures fabricated by metal organic vapor phase epitaxy. Electroluminescent structures were realized in both axial pn-junctions in single GaAs nanowires and free-standing nanowire arrays with a pn-junction formed between nanowires and substrate, respectively. The electroluminescence emission peak from single nanowire pn-junctions at 10 K was registered at an energy of around 1.32 eV and shifted to 1.4 eV with an increasing current. The line is attributed to the recombination in the compensated region present in the nanowire due to the memory effect of the vapor-liquid-solid growth mechanism. Arrayed nanowire electroluminescent structures with a pn-junction formed between nanowires and substrate demonstrated at 5 K a strong electroluminescence peak at 1.488 eV and two shoulder peaks at 1.455 and 1.519 eV. The main emission line was attributed to the recombination in the p-doped GaAs. The other two lines correspond to the tunneling-assisted photon emission and band-edge recombination in the abrupt junction, respectively. Electroluminescence spectra are compared with the micro-photoluminescence spectra taken along the single p-, n- and single nanowire pn-junctions to find the origin of the electroluminescence peaks, the distribution of doping species and the sharpness of the junctions.

  7. Microstructure evolution of an EB-PVD NiAl coating and its underlying single crystal superalloy substrate

    International Nuclear Information System (INIS)

    Gong, Xueyuan; Peng, Hui; Ma, Yue; Guo, Hongbo; Gong, Shengkai

    2016-01-01

    A NiAl coating was deposited onto a Ni-based single crystal superalloy with (001) crystal orientation by electron beam physical vapor deposition (EB-PVD). The as-deposited NiAl coating showed a columnar microstructure with (110) preferred orientation. The microstructure evolution behavior near interface between the NiAl coating and superalloy substrate at 1100 °C was investigated. Kirkendall voids were formed in the NiAl coating, indicating the different elements diffusion coefficients in the coating and substrate. Interdiffusion zone (IDZ) with rod-like and granular topological close-packed (TCP) phases and substrate diffusion zone (SDZ) with needle-like TCP phases were formed during diffusion annealing at elevated temperature. The equi-axed β-NiAl grains were developed in the IDZ after diffusion annealing at 1100 °C for 10 h, which showed different orientations from the coating and substrate. However, after 50 h diffusion annealing, the equi-axed β-NiAl phases in the IDZ were transformed into γ′-Ni 3 Al phases which had the same orientation as the substrate. Furthermore, oriented rafting of the substrate occurred during diffusion annealing and the rafts were parallel to the coating/substrate interface. - Highlights: • The as-deposited NiAl coating by EB-PVD showed a (110) preferred orientation. • Kirkendall voids were formed in the NiAl coating near the interface. • Equi-axed β grains in the IDZ were transformed into γ′ after 50 h annealing. • The secondary γ′ phases in the IDZ showed the same orientation as substrate. • Oriented rafting of the substrate occurred during diffusion annealing.

  8. Formation of columnar (In,Ga)As quantum dots on GaAs(100)

    International Nuclear Information System (INIS)

    He, J.; Noetzel, R.; Offermans, P.; Koenraad, P.M.; Gong, Q.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2004-01-01

    Columnar (In,Ga)As quantum dots (QDs) with homogeneous composition and shape in the growth direction are realized by molecular-beam epitaxy on GaAs(100) substrates. The columnar (In,Ga)As QDs are formed on InAs seed QDs by alternating deposition of thin GaAs intermediate layers and monolayers of InAs with extended growth interruptions after each layer. The height of the columnar (In,Ga)As QDs is controlled by varying the number of stacked GaAs/InAs layers. The structural and optical properties are studied by cross-sectional scanning tunneling microscopy, atomic force microscopy, and photoluminescence spectroscopy. With increase of the aspect ratio of the columnar QDs, the emission wavelength is redshifted and the linewidth is reduced

  9. Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

    Science.gov (United States)

    Ren, X.; Huang, H.; Dubrovskii, V. G.; Sibirev, N. V.; Nazarenko, M. V.; Bolshakov, A. D.; Ye, X.; Wang, Q.; Huang, Y.; Zhang, X.; Guo, J.; Liu, X.

    2011-01-01

    Interesting phenomena of GaAs nanowire growth have been observed. The nanowires were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs (1 1 1)B substrates with an Au catalyst at 464 °C. The growth rates of all nanowires were almost the same for a fixed density of Au nanodrops. TEM analysis demonstrates a stacking-fault-free zincblende structure of the nanowires even when their radius is reduced to as small as 12 nm. A theoretical model is developed that is capable of describing the critical radius of zincblende to wurtzite phase transition as a function of vapor supersaturation and material constants. The model shows that the surprising prevalence of the zincblende structure should originate from very high supersaturations during MOCVD.

  10. Experimental and theoretical investigations on the phase purity of GaAs zincblende nanowires

    International Nuclear Information System (INIS)

    Ren, X; Huang, H; Ye, X; Wang, Q; Huang, Y; Zhang, X; Guo, J; Liu, X; Dubrovskii, V G; Sibirev, N V; Nazarenko, M V; Bolshakov, A D

    2011-01-01

    Interesting phenomena of GaAs nanowire growth have been observed. The nanowires were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs (1 1 1)B substrates with an Au catalyst at 464 °C. The growth rates of all nanowires were almost the same for a fixed density of Au nanodrops. TEM analysis demonstrates a stacking-fault-free zincblende structure of the nanowires even when their radius is reduced to as small as 12 nm. A theoretical model is developed that is capable of describing the critical radius of zincblende to wurtzite phase transition as a function of vapor supersaturation and material constants. The model shows that the surprising prevalence of the zincblende structure should originate from very high supersaturations during MOCVD

  11. Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

    International Nuclear Information System (INIS)

    Ripalda, J. M.; Rivera, A.; Alen, B.; Gonzalez, Y.; Gonzalez, L.; Briones, F.; Sanchez, A. M.; Taboada, A. G.; Rotter, T. J.; Balakrishnan, G.

    2012-01-01

    We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90 deg. misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.

  12. Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Ripalda, J. M.; Rivera, A.; Alen, B.; Gonzalez, Y.; Gonzalez, L.; Briones, F. [IMM-Instituto de Microelectronica de Madrid (CNM-CSIC), Isaac Newton 8, PTM, E-28760 Tres Cantos, Madrid (Spain); Sanchez, A. M. [Physics Department, University of Warwick, Coventry CV4 7AL (United Kingdom); Taboada, A. G. [Laboratory for Solid State Physics, ETH Zurich, Schafmattstr. 16, CH-8093 Zurich (Switzerland); Rotter, T. J.; Balakrishnan, G. [Center for High Technology Materials, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

    2012-01-02

    We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90 deg. misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.

  13. GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Vaisman, Michelle [Yale University; Li, Qiang [Hong Kong University of Science and Technology; Lau, Kei May [Hong Kong University of Science and Technology

    2017-08-31

    Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

  14. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

    International Nuclear Information System (INIS)

    Sanz-Hervas, A.; Aguilar, M.; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J.; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E.

    1997-01-01

    In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224± reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies

  15. Deconvolving temperature and substrate effects on soil heterotrophic respiration under multiple global change factors in mixed grass prairie

    Science.gov (United States)

    Tucker, C.; Nie, M.; Pendall, E. G.

    2013-12-01

    in temperature sensitivity of SOM decomposition. Overall, the temperature sensitivity of the fast pool was highly sensitive to global change factors and their interactions. On the other hand, there were no differences in temperature sensitivity of the slow pool in response to the global change factors. Similarly, the base rate of the fast pool was sensitive to the global change factors, while the slow pool base rate was not. However, the overall size of the slow pool was significantly affected by the global change factors. Vegetation removal reduced the slow pool by ~19% across all warming x CO2 treatments. This effect was greatest under elevated CO2 (both warmed and control), but non-significant under ambient CO2 and temperature. Importantly, effects mediated through the vegetation were the primary factor determining whether slow pool C was gained or lost under elevated CO2 and warming. Our data-model fusion approach allowed us to deconvolve the effect of reduced substrate availability from temperature sensitivity, and to demonstrate that global change may lead to strong positive C cycling feedbacks.

  16. The temperature dependence on the electrical properties of dysprosium oxide deposited on n-porous GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Saghrouni, H., E-mail: hayet_sagrouni@yahoo.fr [Université de Sousse, LabEM-LR11ES34 Energie-Matériaux, Ecole Supérieure des Sciences et de la Technologie, Rue Lamine Abessi 4011, Hammam Sousse (Tunisia); Université de Sousse, Equipe de recherche caractérisations optoélectronique et spectroscopique des matériaux et nanomatériaux pour les télécommunications et capteurs, ISITCOM 4011, Hammam Sousse (Tunisia); Jomni, S. [Université de Tunis El Manar, LR: LAB MA03 Matériaux, Organisation et Propriétés, Faculté des Sciences de Tunis, 2092 (Tunisia); Cherif, A. [Université de Sousse, LabEM-LR11ES34 Energie-Matériaux, Ecole Supérieure des Sciences et de la Technologie, Rue Lamine Abessi 4011, Hammam Sousse (Tunisia); Université de Sousse, Equipe de recherche caractérisations optoélectronique et spectroscopique des matériaux et nanomatériaux pour les télécommunications et capteurs, ISITCOM 4011, Hammam Sousse (Tunisia); Belgacem, W. [Université de Tunis El Manar, LR: LAB MA03 Matériaux, Organisation et Propriétés, Faculté des Sciences de Tunis, 2092 (Tunisia); and others

    2016-08-15

    This paper describes the electrical and dielectric characteristics for the first time of the high-k Dy{sub 2}O{sub 3} oxide film deposited on the porous GaAs substrate by electron beam deposition under ultra vacuum. Morphological characterization is investigated by atomic force microscopy (AFM). The electrical and dielectric properties of Co/Au/Dy{sub 2}O{sub 3}/n-porous GaAs structure were studied in the temperature range of 80–500 K. The conductance and capacitance measurements were performed as a function of bias voltage and frequency. The dielectric constant (ε′), dielectric loss (ε″) and dielectric loss tangent (tanδ) of the structure are obtained from capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. These parameters are found to be strong functions of temperature and bias voltage. In the forward bias region, C–V plots show a negative capacitance (NC) behavior, ε′–V plots for each temperature value take negative values as well. Such negative values of C correspond to the maximum of the conductance (G/ω). The negative capacitance values appear abnormal when compared to the conventional behavior of ideal Schottky barrier diode (SBD) and metal–oxide–semiconductor (MOS) structures. The following behavior of the C and ε′ in the forward bias region has been explained with the minority-carrier injection and relaxation theory. From DC conductance study, electronic conduction is found to be dominated by thermally activated hopping at high temperature. Activation energy is deduced from the variation of conductance with temperature. The Nyquist plots exhibited single semi-circular arcs which were well fitted to an equivalent circuit. - Highlights: • The high-k Dy{sub 2}O{sub 3} oxide film is deposited on n-porous GaAs by means of electron beam deposition. • The electrical and dielectric properties of MOS structure were studied. • A strong negative capacitance (NC) phenomenon has been observed in the C-V and C

  17. Effects of dry etching on GaAs

    International Nuclear Information System (INIS)

    Pang, S.W.; Lincoln, G.A.; McClelland, R.W.; DeGraff, P.D.; Geis, M.W.; Piacentini, W.J.

    1983-01-01

    A number of dry etching techniques have been developed and their ability to produce anisotropic etch profiles has been demonstrated. In addition to etch anisotropy, an important consideration for device and circuit fabrication is whether a sample suffers radiation damage by exposure to ions, electrons, or ultraviolet light during etching. In this study we evaluate the degree of radiation damage induced in GaAs by ion-beam etching with Ar, reactive-ion etching with CF 4 and CHF 3 , and ion-beam-assisted etching with Ar and Cl 2 . In addition, we propose and demonstrate processing techniques which can be used after dry etching to reduce the effects of radiation damage. GaAs samples were etched under a variety of etching conditions. The degree of radiation damage caused by etching was determined by evaluating Schottky diodes fabricated on the etched surfaces and by using deep level transient spectroscopy to characterize trapping centers. It was found that the barrier heights and breakdown voltages of Schottky diodes were changed after etching. Also, an increase in the density of traps was observed. Variations in the etching conditions had a strong effect on the measured characteristics of the samples

  18. Design and characterisation of high electron mobility transistors for use in a monolithic GaAs X-ray imaging sensor

    International Nuclear Information System (INIS)

    Boardman, D.A.; Sellin, P.J.

    2001-01-01

    A new design of monolithic GaAs pixel detector is proposed for medical and synchrotron applications. In this device a semi-insulating GaAs wafer will be used as both the detector element and the substrate for the integrated charge readout matrix. The charge readout matrix consists of High Electron Mobility Transistors (HEMTs), which are grown epitaxially onto the GaAs substrate. Experimental characterisation of HEMTs has been carried out and their suitability for the proposed imaging device is assessed. Temperature measurements on initial devices showed the threshold voltage to be stable from room temperature down to -15 degree sign C. HEMT designs with lower leakage current that operate in enhancement mode have been fabricated and modelled using the Silvaco simulation package. These optimised devices have been fabricated using a gate recess, and exhibit enhancement mode operation and significantly reduced gate leakage currents

  19. Potential use of the facultative halophyte Chenopodium quinoa Willd. as substrate for biogas production cultivated with different concentrations of sodium chloride under hydroponic conditions.

    Science.gov (United States)

    Turcios, Ariel E; Weichgrebe, Dirk; Papenbrock, Jutta

    2016-03-01

    This project analyses the biogas potential of the halophyte Chenopodium quinoa Willd. In a first approach C. quinoa was grown with different concentrations of NaCl (0, 10 and 20 ppt NaCl) and the crop residues were used as substrate for biogas production. In a second approach, C. quinoa was grown with 0, 10, 20 and 30 ppt NaCl under hydroponic conditions and the fresh biomass was used as substrate. The more NaCl is in the culture medium, the higher the sodium, potassium, crude ash and hemicellulose content in the plant tissue whereas the calcium, sulfur, nitrogen and carbon content in the biomass decrease. According to this study, it is possible to produce high yields of methane using biomass of C. quinoa. The highest specific methane yields were obtained using the substrate from the plants cultivated at 10 and 20 ppt NaCl in both experiments. Copyright © 2015 Elsevier Ltd. All rights reserved.

  20. Electric field effect of GaAs monolayer from first principles

    Directory of Open Access Journals (Sweden)

    Jiongyao Wu

    2017-03-01

    Full Text Available Using first-principle calculations, we investigate two-dimensional (2D honeycomb monolayer structures composed of group III-V binary elements. It is found that such compound like GaAs should have a buckled structure which is more stable than graphene-like flat structure. This results a polar system with out-of-plane dipoles arising from the non-planar structure. Here, we optimized GaAs monolayer structure, then calculated the electronic band structure and the change of buckling height under external electric field within density functional theory using generalized gradient approximation method. We found that the band gap would change proportionally with the electric field magnitude. When the spin-orbit coupling (SOC is considered, we revealed fine spin-splitting at different points in the reciprocal space. Furthermore, the valence and conduction bands spin-splitting energies due to SOC at the K point of buckled GaAs monolayers are found to be weakly dependent on the electric field strength. Finally electric field effects on the spin texture and second harmonic generation are discussed. The present work sheds light on the control of physical properties of GaAs monolayer by the applied electric field.

  1. Heat load of a GaAs photocathode in an SRF electron gun

    International Nuclear Information System (INIS)

    Wang Erdong; Zhao Kui; Jorg Kewisch; Ilan Ben-Zvi; Andrew Burrill; Trivini Rao; Wu Qiong; Animesh Jain; Ramesh Gupta; Doug Holmes

    2011-01-01

    A great deal of effort has been made over the last decades to develop a better polarized electron source for high energy physics. Several laboratories operate DC guns with a gallium arsenide photocathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved by using a superconducting radio frequency (SRF) electron gun, which delivers beams of a higher brightness than that from DC guns because the field gradient at the cathode is higher. SRF guns with metal and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since a bulk gallium arsenide (GaAs) photocathode is normal conducting, a problem arises from the heat load stemming from the cathode. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and verification by measuring the quality factor of the gun with and without the cathode at 2 K. We simulate heat generation and flow from the GaAs cathode using the ANSYS program. By following the findings with the heat load model, we designed and fabricated a new cathode holder (plug) to decrease the heat load from GaAs. (authors)

  2. Very Heavily Doped N-Type GaAs Obtained With Pulsed Laser Annealing

    Science.gov (United States)

    Rys, Andrzej; Chin, Tim; Compaan, Alvin; Bhat, Ajit

    1988-08-01

    A study of carrier activation and mobility was performed in pulsed laser annealed samples of GaAs implanted with doses of Si and Se from 2.2x1012 to 6.0x1014 cm-2. The samples were annealed using a pulsed XeCl excimer laser ( λ=308 nm) and a pulsed dye laser ( λ=728 nm) with energy densities from 0.1 to 0.9 J/cm2 and a 10 nsec pulse. Very high carrier concentrations of 3x1019 and 1.5x1019 cm-3 were obtained for best n-type GaAs samples annealed with the dye laser and excimer laser, respectively. Dye laser consistently produced higher activation than excimer laser annealing. A transient reflectivity experiment was performed to identify the GaAs melt threshold and the melt phase dynamics of the GaAs,under the nitride cap. The threshold energies for cap damage were 0.34 and 0.12 J/cm2 for excimer and dye lasers, respectively. High carrier activation, as measured by Van der Pauw method, was achieved even for lightly doped samples although the room temperature Hall mobility was low. Raman spectroscopy was used to identify the threshold energies for the GaAs implant layer recrystallization and for optimum carrier activation.

  3. Enhanced charge recombination due to surfaces and twin defects in GaAs nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Evan; Sheng, Chunyang; Nakano, Aiichiro [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Shimamura, Kohei; Shimojo, Fuyuki [Collaboratory for Advanced Computing and Simulations, Department of Physics and Astronomy, Department of Computer Science, Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089-0242 (United States); Department of Physics, Kumamoto University, Kumamoto 860-8555 (Japan)

    2015-02-07

    Power conversion efficiency of gallium arsenide (GaAs) nanowire (NW) solar cells is severely limited by enhanced charge recombination (CR) at sidewall surfaces, but its atomistic mechanisms are not well understood. In addition, GaAs NWs usually contain a high density of twin defects that form a twin superlattice, but its effects on CR dynamics are largely unknown. Here, quantum molecular dynamics (QMD) simulations reveal the existence of an intrinsic type-II heterostructure at the (110) GaAs surface. Nonadiabatic quantum molecular dynamics (NAQMD) simulations show that the resulting staggered band alignment causes a photoexcited electron in the bulk to rapidly transfer to the surface. We have found orders-of-magnitude enhancement of the CR rate at the surface compared with the bulk value. Furthermore, QMD and NAQMD simulations show unique surface electronic states at alternating (111)A and (111)B sidewall surfaces of a twinned [111]-oriented GaAs NW, which act as effective CR centers. The calculated large surface recombination velocity quantitatively explains recent experimental observations and provides microscopic understanding of the underlying CR processes.

  4. Experimental and Simulated Investigations of Thin Polymer Substrates with an Indium Tin Oxide Coating under Fatigue Bending Loadings

    Directory of Open Access Journals (Sweden)

    Jiong-Shiun Hsu

    2016-08-01

    Full Text Available Stress-induced failure is a critical concern that influences the mechanical reliability of an indium tin oxide (ITO film deposited on a transparently flexible polyethylene terephthalate (PET substrate. In this study, a cycling bending mechanism was proposed and used to experimentally investigate the influences of compressive and tensile stresses on the mechanical stability of an ITO film deposited on PET substrates. The sheet resistance of the ITO film, optical transmittance of the ITO-coated PET substrates, and failure scheme within the ITO film were measured to evaluate the mechanical stability of the concerned thin films. The results indicated that compressive and tensile stresses generated distinct failure schemes within an ITO film and both led to increased sheet resistance and optical transmittance. In addition, tensile stress increased the sheet resistance of an ITO film more easily than compressive stress did. However, the influences of both compressive and tensile stress on increased optical transmittance were demonstrated to be highly similar. Increasing the thickness of a PET substrate resulted in increased sheet resistance and optical transmittance regardless of the presence of compressive or tensile stress. Moreover, J-Integral, a method based on strain energy, was used to estimate the interfacial adhesion strength of the ITO-PET film through the simulation approach enabled by a finite element analysis.

  5. Development of a novel non-contact inspection technique to detect micro cracks under the surface of a glass substrate by thermal stress-induced light scattering method

    Science.gov (United States)

    Sakata, Yoshitaro; Terasaki, Nao; Nonaka, Kazuhiro

    2017-05-01

    Fine polishing techniques, such as a chemical mechanical polishing treatment, are important techniques in glass substrate manufacturing. However, these techniques may cause micro cracks under the surface of glass substrates because they used mechanical friction. A stress-induced light scattering method (SILSM), which was combined with light scattering method and mechanical stress effects, was proposed for inspecting surfaces to detect polishing-induced micro cracks. However, in the conventional SILSM, samples need to be loaded with physical contact, and the loading point is invisible in transparent materials. Here, we introduced a novel non-contact SILSM using a heating device. A glass substrate was heated first, and then the light scattering intensity of micro cracks was detected by a cooled charge-couple device camera during the natural cooling process. Results clearly showed during the decreasing surface temperature of a glass substrate, appropriate thermal stress is generated for detecting micro cracks by using the SILSM and light scattering intensity from micro cracks changes. We confirmed that non-contact thermal SILSM (T-SILSM) can detect micro cracks under the surface of transparent materials.

  6. Adaptation of continuous biogas reactors operating under wet fermentation conditions to dry conditions with corn stover as substrate.

    Science.gov (United States)

    Kakuk, Balázs; Kovács, Kornél L; Szuhaj, Márk; Rákhely, Gábor; Bagi, Zoltán

    2017-08-01

    Corn stover (CS) is the agricultural by-product of maize cultivation. Due to its high abundance and high energy content it is a promising substrate for the bioenergy sector. However, it is currently neglected in industrial scale biogas plants, because of its slow decomposition and hydrophobic character. To assess the maximum biomethane potential of CS, long-term batch fermentations were carried out with various substrate concentrations and particle sizes for 72 days. In separate experiments we adapted the biogas producing microbial community in wet fermentation arrangement first to the lignocellulosic substrate, in Continuous Stirred Tank Reactor (CSTR), then subsequently, by continuously elevating the feed-in concentration, to dry conditions in solid state fermenters (SS-AD). In the batch tests, the produce 90% of the total biomethane yield than the amount of substrate added to the fermentation lowered the specific methane yield. In the CSTR experiment, the daily substrate loading was gradually increased from 1 to 2 g vs /L/day until the system produced signs of overloading. Then the biomass was transferred to SS-AD reactors and the adaptation process was studied. Although the specific methane yields were lower in the SS-AD arrangement (177 mL CH 4 /g vs in CSTR vs. 105 mL in SS-AD), the benefits of process operational parameters, i.e. lower energy consumption, smaller reactor volume, digestate amount generated and simpler configuration, may compensate the somewhat lower yield. Copyright © 2017 The Authors. Published by Elsevier Ltd.. All rights reserved.

  7. EFFECT OF DIFFERENT SUBSTRATES ON THE GROWTH AND YIELD OF TOMATO (Lycopersicum esculentum Mill UNDER GREENHOUSE CONDITIONS

    Directory of Open Access Journals (Sweden)

    Luis Daniel Ortega-Martínez

    2010-09-01

    Full Text Available The tomato (Lycopersicum esculentum Mill is the world's second most important vegetable. In Mexico, the crop gains economic and social relevance by the generation of foreign exchange and jobs, the production systems of this vegetable have been diversified in order to increase performance, incorporating innovative technologies such as plastic covers, drop irrigation and hydroponics. One of the main factors determining the success of the crop is the substrate, being the medium in which roots were developed which have great influence on the growth and development. In thisstudy, we evaluated during the crop season 2008-2009, the effect of substrate: pine sawdust, compost of sheep manure, agricultural land and red volcanic rock, on growth and yield of tomato. The experimental design used was randomized complete block with four repetitions and ten treatments were evaluated results from a combination of substrates in a volume of 1:1, each experimental unit consisted of four plants, the studied variables were subjected to an analysis of variance (ANOVA using the statistical package Statistical Package for the Social Sciences (SPSS. The genotype used was Sun 7705. Significant differences between substrates, composting with sawdust mixing affected to a greater response for the variables height 4.61 m, 2.1 cm thick of stem, the fruits of greater weight 107.8 g, yield per plant and 4 kg and 25 kg/m-2. However, the number of flowers and clusters was higher in the sawdust substrate, so the composting with sawdust mixture may be a viable option for greenhouse tomato production.

  8. High-quality III-V semiconductor MBE growth on Ge/Si virtual substrates for metal-oxide-semiconductor device fabrication

    Science.gov (United States)

    Choi, Donghun; Harris, James S.; Kim, Eunji; McIntyre, Paul C.; Cagnon, Joel; Stemmer, Susanne

    2009-03-01

    We describe the molecular-beam epitaxial (MBE) growth and fabrication of III-V metal-oxide-semiconductor (MOS) devices on Ge/Si virtual substrates. We show that high-temperature in-situ H 2 annealing in the chemical-vapor deposition system changes the Ge surface configuration and produces a surface with predominantly double-step-layer conditions, which is crucial for the growth of single-domain GaAs. In addition, the surface morphology of III-V on Ge/Si improved significantly with an annealing treatment of the Ge surface carried out under high arsenic background pressure in the MBE chamber. This facilitates uniform As-monolayer formation on the entire Ge surface. Low-temperature migration-enhanced epitaxy (MEE) and low-temperature conventional GaAs growth not only enhance the growth of single-domain GaAs without Ge outdiffusion but also produce a sufficiently smooth surface for high-k dielectric deposition, achieving low leakage current. A 300-nm-thick GaAs buffer layer was grown, followed by a 10 nm growth of In 0.2Ga 0.8As high-mobility channel layer. A 7-8-nm-thick Al 2O 3 layer was deposited ex-situ by atomic-layer deposition (ALD). We verify the quality of III-V growth using transmission electron microscopy (TEM), X-ray diffraction (XRD), secondary ion mass spectrometry (SIMS) and photoluminescence (PL) measurement. The C-V characteristics show unpinning of the Fermi level, which is a necessary condition for gate voltage control of the drain current. This work suggests this materials combination is a promising candidate for the realization of advanced, nonclassical complementary-MOS and optoelectronic devices on Si substrates.

  9. Catalytic role of gold nanoparticle in GaAs nanowire growth: a density functional theory study.

    Science.gov (United States)

    Kratzer, Peter; Sakong, Sung; Pankoke, Volker

    2012-02-08

    The energetics of Ga, As, and GaAs species on the Au(111) surface (employed as a model for Au nanoparticles) is investigated by means of density functional calculations. Apart from formation of the compound Au(7)Ga(2), Ga is found to form a surface alloy with gold with comparable ΔH ~ -0.5 eV for both processes. Dissociative adsorption of As(2) is found to be exothermic by more than 2 eV on both clean Au(111) and AuGa surface alloys. The As-Ga species formed by reaction of As with the surface alloy is sufficiently stable to cover the surface of an Au particle in vacuo in contact with a GaAs substrate. The results of the calculations are interpreted in the context of Au-catalyzed growth of GaAs nanowires. We argue that arsenic is supplied to the growth zone of the nanowire mainly by impingement of molecules on the gold particle and identify a regime of temperatures and As(2) partial pressures suitable for Au-catalyzed nanowire growth in molecular beam epitaxy. © 2012 American Chemical Society

  10. Resorcinol degradation by a Penicillium chrysogenum strain under osmotic stress: mono and binary substrate matrices with phenol.

    Science.gov (United States)

    Guedes, Sumaya Ferreira; Mendes, Benilde; Leitão, Ana Lúcia

    2011-04-01

    A phenol-degrading Penicillium chrysogenum strain previously isolated from a salt mine was able to grow at 1,000 mg l(-1) of resorcinol on solid medium. The aerobic degradation of resorcinol by P. chrysogenum CLONA2 was studied in batch cultures in minimal mineral medium with 58.5 g l(-1) of sodium chloride using resorcinol as the sole carbon source. The fungal strain showed the ability to degrade up to 250 mg l(-1) of resorcinol. Resorcinol and phenol efficiency degradation by P. chrysogenum CLONA2 was compared. This strain removes phenol faster than resorcinol. When phenol and resorcinol were in binary substrate matrices, phenol enhanced resorcinol degradation, and organic load decreased with respect to the mono substrate matrices. The acute toxicity of phenol and resorcinol, individually and in combination, to Artemia franciscana larvae has been verified before and after the bioremediation process with P. chrysogenum CLONA2. The remediation process was effective in mono and binary substrate systems.

  11. HgCdTe photovoltaic detectors on Si substrates

    International Nuclear Information System (INIS)

    Zanio, K.R.; Bean, R.C.

    1988-01-01

    HgCdTe photovoltaic detectors have been fabricated on Si substrates through intermediate CdTe/GaAs layers. Encapsulation of the GaAs between the CdTe and Si prevents unintentional doping of the HgCdTe by Ga and As. Uniform epitaxial GaAs is grown on three inch diameter Si substrates. Detectors on such large area Si substrates will offer hybrid focal plane arrays whose dimensions are not limited by the difference between the coefficients of thermal expansion of the Si signal processor and the substrate for the HgCdTe detector array. The growth of HgCdTe detectors on the Si signal processors for monolithic focal plane arrays is also considered. 40 references

  12. Photovoltaic x-ray detectors based on the GaAs epitaxial structures

    CERN Document Server

    Akhmadullin, R A; Dvoryankina, G G; Dikaev, Y M; Ermakov, M G; Ermakova, O N; Krikunov, A I; Kudryashov, A A; Petrov, A G; Telegin, A A

    2002-01-01

    The new photovoltaic detector of the X-ray radiation is proposed on the basis of the GaAs epitaxial structures, which operates with high efficiency of the charge carriers collection without shift voltage and at the room temperature. The structures are grown by the method of the gas-phase epitaxy on the n sup + -type highly-alloyed substrates. The range of sensitivity to the X-ray radiation is within the range of effective energies from 8 up to 120 keV. The detector maximum response in the current short circuit mode is determined

  13. Growth of GaAs “nano ice cream cones” by dual wavelength pulsed laser ablation

    Science.gov (United States)

    Schamp, C. T.; Jesser, W. A.; Shivaram, B. S.

    2007-05-01

    Harmonic generation crystals inherently offer the possibility of using multiple wavelengths of light in a single laser pulse. In the present experiment, the fundamental (1064 nm) and second harmonic (532 nm) wavelengths from an Nd:YAG laser are focused together on GaAs and GaSb targets for ablation. Incident energy densities up to about 45 J/cm 2 at 10 Hz with substrate temperatures between 25 and 600 °C for durations of about 60 s have been used in an ambient gas pressure of about 10 -6 Torr. The ablated material was collected on electron-transparent amorphous carbon films for TEM analysis. Apart from a high density of isolated nanocrystals, the most common morphology observed consists of a crystalline GaAs cone-like structure in contact with a sphere of liquid Ga, resembling an "ice cream cone", typically 50-100 nm in length. For all of the heterostuctures of this type, the liquid/solid/vacuum triple junction is found to correspond to the widest point on the cone. These heterostructures likely form by preferential evaporation of As from molten GaAs drops ablated from the target. The resulting morphology minimizes the interfacial and surface energies of the liquid Ga and solid GaAs.

  14. Examining Wetting and Dewetting Processes in Thin-films on Crystalline Substrates at the Nanoscale

    Science.gov (United States)

    Hihath, Sahar

    Controlling the wetting and dewetting of ultra-thin films on solid substrates is important for a variety of technological and fundamental research applications. These applications include film deposition for semiconductor manufacturing, the growth of nanowires through nanoparticle-based catalysis sites, to making ordered arrays of nanoscale particles for electronic and optical devices. However, despite the importance of these processes, the underlying mechanisms by which a film wets a surface or dewets from it is still often unclear and widely debated. In this dissertation we examine wetting and dewetting processes in three materials systems that are relevant for device applications with the ultimate goal of understanding what mechanisms drive the wetting (or dewetting) process in each case. First, we examine the formation of wetting layers between nanoparticle films and highly conductive GaAs substrates for spintronic applications. In this case, the formation of a wetting layer is important for nanoparticle adhesion on the substrate surface. Wetting layers can be made by annealing these systems, which causes elemental diffusion from nanoparticles into the substrate, thereby adhesion between the nanoparticles and the substrate. Here we investigate the feasibility of forming a wetting layer underneath nanoparticles post-annealing in a system of Fe3O4 nanoparticles on a (100) GaAs substrate by studying the interface structure and composition via Transmission Electron Microscopy (TEM), Scanning Transmission Electron Microscopy (STEM), Electron Energy Loss Spectroscopy (EELS) and Energy Dispersive X-ray Spectroscopy (EDXS). Electron Energy-Loss fine structures of the Fe-L 3,2 and O-K absorption edges were quantitatively analyzed to gain insight about the compositional gradient of the interface between the nanoparticles and the GaAs substrate. Additionally, real-space density functional theory calculations of the dynamical form factor was performed to confirm the

  15. Panel fabrication utilizing GaAs solar cells

    Science.gov (United States)

    Mardesich, N.

    1984-01-01

    The development of the GaAs solar cells for space applications is described. The activities in the fabrication of GaAs solar panels are outlined. Panels were fabricated while introducing improved quality control, soldering laydown and testing procedures. These panels include LIPS II, San Marco Satellite, and a low concentration panel for Rockwells' evaluation. The panels and their present status are discussed.

  16. Optical pumping of hot phonons in GaAs

    International Nuclear Information System (INIS)

    Collins, C.L.; Yu, P.Y.

    1982-01-01

    Optical pumping of hot LO phonons in GaAs has been studied as a function of the excitation photon frequency. The experimental results are in good agreement with a model calculation which includes both inter- and intra-valley electron-phonon scatterings. The GAMMA-L and GAMMA-X intervalley electron-phonon interactions in GaAs have been estimated

  17. Infrared Energy Harvesting in Millimeter-Scale GaAs Photovoltaics.

    Science.gov (United States)

    Moon, Eunseong; Blaauw, David; Phillips, Jamie D

    2017-11-01

    The design and characterization of mm-scale GaAs photovoltaic cells are presented and demonstrate highly efficient energy harvesting in the near infrared. Device performance is improved dramatically by optimization of the device structure for the near-infrared spectral region and improving surface and sidewall passivation with ammonium sulfide treatment and subsequent silicon nitride deposition. The power conversion efficiency of a 6.4 mm 2 cell under 660 nW/mm 2 NIR illumination at 850 nm is greater than 30 %, which is higher than commercial crystalline silicon solar cells under similar illumination conditions. Critical performance limiting factors of sub-mm scale GaAs photovoltaic cells are addressed and compared to theoretical calculations.

  18. Ion implanted GaAs microwave FET's

    Science.gov (United States)

    Gill, S. S.; Blockley, E. G.; Dawsey, J. R.; Foreman, B. J.; Woodward, J.; Ball, G.; Beard, S. J.; Gaskell, J. M.; Allenson, M. B.

    1988-06-01

    The combination of ion implantation and photolithographic patterning techniques was applied to the fabrication of GaAs microwave FETs to provide a large number of devices having consistently predictable dc and high frequency characteristics. To validate the accuracy and repeatability of the high frequency device parameters, an X-band microwave circuit was designed and realized. The performance of this circuit, a buffered amplifier, is very close to the design specification. The availability of a large number of reproducible, well-characterized transistors enabled work to commence on the development of a large signal model for FETs. Work in this area is also described.

  19. Neural substrates underlying reconcentration for the preparation of an appropriate cognitive state to prevent future mistakes: a functional magnetic resonance imaging study

    Science.gov (United States)

    Miura, Naoki; Nozawa, Takayuki; Takahashi, Makoto; Yokoyama, Ryoichi; Sasaki, Yukako; Sakaki, Kohei; Kawashima, Ryuta

    2015-01-01

    The ability to reconcentrate on the present situation by recognizing one’s own recent errors is a cognitive mechanism that is crucial for safe and appropriate behavior in a particular situation. However, an individual may not be able to adequately perform a subsequent task even if he/she recognize his/her own error; thus, it is hypothesized that the neural mechanisms underlying the reconcentration process are different from the neural substrates supporting error recognition. The present study performed a functional magnetic resonance imaging (fMRI) analysis to explore the neural substrates associated with reconcentration related to achieving an appropriate cognitive state, and to dissociate these brain regions from the neural substrates involved in recognizing one’s own mistake. This study included 44 healthy volunteers who completed an experimental procedure that was based on the Eriksen flanker task and included feedback regarding the results of the current trial. The hemodynamic response induced by each instance of feedback was modeled using a combination of the successes and failures of the current and subsequent trials in order to identify the neural substrates underlying the ability to reconcentrate for the next situation and to dissociate them from those involved in recognizing current errors. The fMRI findings revealed significant and specific activation in the dorsal aspect of the medial prefrontal cortex (MFC) when participants successfully reconcentrated on the task after recognizing their own error based on feedback. Additionally, this specific activation was clearly dissociated from the activation foci that occurred during error recognition. These findings indicate that the dorsal aspect of the MFC may be a distinct functional region that specifically supports the reconcentration process and that is associated with the prevention of successive errors when a human subject recognizes his/her own mistake. Furthermore, it is likely that this

  20. The composition and depth of green roof substrates affect the growth of Silene vulgaris and Lagurus ovatus species and the C and N sequestration under two irrigation conditions.

    Science.gov (United States)

    Ondoño, S; Martínez-Sánchez, J J; Moreno, J L

    2016-01-15

    Extensive green roofs are used to increase the surface area covered by vegetation in big cities, thereby reducing the urban heat-island effect, promoting CO2 sequestration, and increasing biodiversity and urban-wildlife habitats. In Mediterranean semi-arid regions, the deficiency of water necessitates the use in these roofs of overall native plants which are more adapted to drought than other species. However, such endemic plants have been used scarcely in green roofs. For this purpose, we tested two different substrates with two depths (5 and 10 cm), in order to study their suitability with regard to adequate plant development under Mediterranean conditions. A compost-soil-bricks (CSB) (1:1:3; v:v:v) mixture and another made up of compost and bricks (CB) (1:4; v:v) were arranged in two depths (5 and 10 cm), in cultivation tables. Silene vulgaris (Moench) Garcke and Lagurus ovatus L. seeds were sown in each substrate. These experimental units were subjected, on the one hand, to irrigation at 40% of the registered evapotranspiration values (ET0) and, on the other, to drought conditions, during a nine-month trial. Physichochemical and microbiological substrate characteristics were studied, along with the physiological and nutritional status of the plants. We obtained significantly greater plant coverage in CSB at 10 cm, especially for L. ovatus (80-90%), as well as a better physiological status, especially in S. vulgaris (SPAD values of 50-60), under irrigation, whereas neither species could grow in the absence of water. The carbon and nitrogen fixation by the substrate and the aboveground biomass were also higher in CSB at 10 cm, especially under L. ovatus - in which 1.32 kg C m(-2) and 209 g N m(-2) were fixed throughout the experiment. Besides, the enzymatic and biochemical parameters assayed showed that microbial activity and nutrient cycling, which fulfill a key role for plant development, were higher in CSB. Therefore, irrigation of 40% can

  1. LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues

    Science.gov (United States)

    Jurisch, M.; Börner, F.; Bünger, Th.; Eichler, St.; Flade, T.; Kretzer, U.; Köhler, A.; Stenzenberger, J.; Weinert, B.

    2005-02-01

    The paper reviews the progress made in crystal growth of semi-insulating GaAs by liquid encapsulation Czochralski and vertical gradient freeze techniques during the last few years under the continuous need for cost reduction of the production process.

  2. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    Energy Technology Data Exchange (ETDEWEB)

    Boardman, D

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of {approx}1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/{mu}Gy mm{sup 2}, for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  3. Design of a GaAs X-ray imaging sensor with integrated HEMT readout circuitry

    International Nuclear Information System (INIS)

    Boardman, D.

    2002-01-01

    A new monolithic semi-insulating (SI) GaAs sensor design for X-ray imaging applications between 10-100keV has been proposed. Monolithic pixel detectors offer a number of advantages over hybrid bump-bonded detectors, such as high device yield, low costs and are easier to produce large scale arrays. In this thesis, an investigation is made of the use of a SI GaAs wafer as both a detector element and substrate for the epitaxially grown High Electron Mobility Transistors (HEMTs). The design of the HEMT transistors, optimised for this application, were produced with the aid of the Silvaco 'Virtual Wafer Fab' simulation package. It was determined that the device characteristics would consist of a small positive threshold voltage, a low off-state drain current and high transconductance. The final HEMT transistor design, that would be integrated to a pixel detector, had a threshold voltage of 0.17V, an off-state leakage current of ∼1nA and a transconductance of 7.4mS. A number of test detectors were characterised using an ion beam induced charge technique. Charge collection efficiency maps of the test detectors were produced to determine their quality as a X-ray detection material. From the results, the inhomogeneity of SI GaAs, homogeneity of epitaxial GaAs and granular nature of polycrystalline GaAs, were observed. The best of these detectors was used in conjunction with a commercial field effect transistor to produce a hybrid device. The charge switching nature of the hybrid device was shown and a sensitivity of 0.44pC/μGy mm 2 , for a detector bias of 60V, was found. The functionality of the hybrid sensor was the same to that proposed for the monolithic sensor. The fabrication of the monolithic sensor, with an integrated HEMT transistor and external capacitor, was achieved. To reach the next stage of producing a monolithic sensor that integrates charge, requires further work in the design and the fabrication process. (author)

  4. Optical anisotropy induced by mechanical strain around the fundamental gap of GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Ortega-Gallegos, J.; Lastras-Martinez, A.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico); Balderas-Navarro, R.E. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico); Facultad de Ciencias, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)

    2008-07-01

    We report on a theoretical-experimental study of reflectance anisotropy spectroscopy (RAS) of GaAs (001) crystals under uniaxial stress. The study was carried out in the energy region around the fundamental transition. RAS spectra in the energy range from 1.2-1.7 eV were measured with a photoelastic-modulator-based spectrometer. To induce an optical anisotropy, the GaAs crystals were thinned down to 400 {mu}m and an calibrated uniaxial stress was applied by deflection. RAS showed a line shape consisting of an oscillation at around E{sub 0}. On the basis of a perturbative approach employing the Pikus-Bir Hamiltonian, we calculated the RAS line shape and found a close agreement with the experimental spectra. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Diffusion of $^{56}$Co in GaAs and SiGe alloys

    CERN Multimedia

    Koskelo, O K

    2007-01-01

    Following our previous diffusion studies performed with the modified radiotracer technique, we propose to determine the diffusion of cobalt in GaAs and SiGe alloys under intrinsic conditions. In the literature only three previous studies for Co diffusion in GaAs may be found and the results differ by over four orders of magnitude from each other. For Co diffusion in SiGe alloys no previous data is available in the literature. For Co diffusion in Ge one study may be found but the results have been obtained with material having increased dislocation density. For dislocation-free material no previous measurements are available. For such experiments we ask for two runs of 3 shifts (total of 6 shifts) with $^{56}$Co$^{+}$ ion beam.

  6. Closure of mass exchange under use of a vegetable conveyer cultivated on a neutral and soil-like substrates as applied to BLSS

    Science.gov (United States)

    Velitchko, Vladimir; Tikhomirov, Alexander; Ushakova, Sofya

    To increase a closure level of mass exchange processes in bioregenerative life support systems (BLSS) including a human a technology of plants cultivation on a soil-like substrate (SLS) consisting in a gradual decomposition of inedible plants biomass under its addition in the SLS was developed at the Institute of Biophysics SB RAS (Russia). In the given work the effect of periodical introduction of inedible plant biomass in the SLS on plants photosynthetic productivity and on the closure of mass exchange has been analyzed. Thereupon CO2 gas exchange and the certain vegetables' productivity under their cultivation in a conveyor regime on the SLS and on a neutral substrate with reference to the closure of mass exchange processes in BLSS have been studied in this work. The vegetables Raphanus sativus L., Brassica caulorapa L. Daucus carota L. and Beta vulgaris L. being prospective plantsrepresentatives of the BLSS phototrophic unit were taken as the research objects. The SLS was taken as an experiment substrate and an expanded clay aggregate as the control. The changeable Knop solution was used for the control, and an irrigation solution with the SLS extract was used for the experiment. Rapidity dynamics of CO2 consumption showed sharp distinctions of the ‘plants-SLS' system from the ‘plantsexpanded clay aggregate' system connected with the oxidation processes coursing in the SLS. The intensity of CO2 evolution from the SLS on average was 70% of the total plants conveyor's respiration. Thus a balance between the system's respiration and photosynthesis was often determined by the processes coursing in the SLS. Here the sharp CO2 evolution was recorded after introduction of the plants inedible biomass in the SLS. That peak was gradually coming down during 10-14 days after the beginning of every cycle of plants cultivation that was connected with intensification of plants photosynthesis and drop of decomposition intensity of the biomass introduced. Comparative

  7. Homojunction GaAs solar cells grown by close space vapor transport

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, Jason W. [University of Oregon; Ritenour, Andrew J. [University of Oregon; Greenaway, Ann L. [University of Oregon; Aloni, Shaul [Lawrence Berkeley National Laboratory; Boettcher, Shannon W. [University of Oregon

    2014-06-08

    We report on the first pn junction solar cells grown by homoepitaxy of GaAs using close space vapor transport (CSVT). Cells were grown both on commercial wafer substrates and on a CSVT absorber film, and had efficiencies reaching 8.1%, open circuit voltages reaching 909 mV, and internal quantum efficiency of 90%. The performance of these cells is partly limited by the electron diffusion lengths in the wafer substrates, as evidenced by the improved peak internal quantum efficiency in devices fabricated on a CSVT absorber film. Unoptimized highly-doped n-type emitters also limit the photocurrent, indicating that thinner emitters with reduced doping, and ultimately wider band gap window or surface passivation layers, are required to increase the efficiency.

  8. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

    Science.gov (United States)

    Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

    2017-12-01

    Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

  9. Initial Stages of GaAs/Au Eutectic Alloy Formation for the Growth of GaAs Nano wires

    International Nuclear Information System (INIS)

    Rosnita, M.; Yussof, W.; Zuhairi, I.; Zulkafli, O.; Samsudi, S.

    2012-01-01

    Annealing temperature plays an important role in the formation of an Au-Ga eutectic alloy. The effects of the annealing temperature on gold nanoparticles colloid and substrate surface were studied using AFM, FE-SEM and TEM. At 600 degree Celsius, the layer of gold colloids particle formed an island in the state of molten eutectic alloy and absorbed evaporated metal-organics to formed nano wire (NW) underneath the alloy. Pit formed on the substrate surface due to the chemical reactions during the annealing process have an impact on the direction of growth of the NW. Without annealing, the NW formed vertically on the GaAs (100) surface. The growth direction depends on the original nucleation facets and surface energy when annealed. When annealed, the wire base is large and curved due to the migration of Ga atoms on the substrate surface towards the tip of the wire and the line tension between the substrate surface and gold particle. (author)

  10. Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms.

    Science.gov (United States)

    Wallace, Patrick M; Sims, Patrick E; Xu, Chi; Poweleit, Christian D; Kouvetakis, John; Menéndez, José

    2017-10-11

    Epitaxial synthesis of Ga(As 1-x P x )Ge 3 alloys on Si(100) substrates is demonstrated using chemical vapor deposition reactions of [D 2 GaN(CH 3 ) 2 ] 2 with P(GeH 3 ) 3 and As(GeH 3 ) 3 precursors. These compounds are chosen to promote the formation of GaAsGe 3 and GaPGe 3 building blocks which interlink to produce the desired crystalline product. Ge-rich (GaP) y Ge 5-2y analogues have also been grown with tunable Ge contents up to 90% by reactions of P(GeH 3 ) 3 with [D 2 GaN(CH 3 ) 2 ] 2 under similar deposition protocols. In both cases, the crystal growth utilized Ge 1-x Si x buffer layers whose lattice constants were specifically tuned as a function of composition to allow perfect lattice matching with the target epilayers. This approach yielded single-phase materials with excellent crystallinity devoid of mismatch-induced dislocations. The lattice parameters of Ga(As 1-x P x )Ge 3 interpolated among the Ge, GaAs, and GaP end members, corroborating the Rutherford backscattering measurements of the P/As ratio. A small deviation from the Vegard's law that depends on the As/P ratio was observed and corroborated by ab initio calculations. Raman scattering shows evidence for the existence of Ga-As and Ga-P bonds in the Ge matrix. The As-rich samples exhibited photoluminescence with wavelengths similar to those observed for pure GaAsGe 3 , indicating that the emission profile does not change in any measurable manner by replacing As by P over a broad range up to x = 0.2. Furthermore, the photoluminescence (PL) data suggested a large negative bowing of the band gap as expected on account of a strong valence band localization on the As atoms. Spectroscopic ellipsometry measurements of the dielectric function revealed a distinct direct gap transition that closely matches the PL emission energy. These measurements also showed that the absorption coefficients can be systematically tuned as a function of composition, indicating possible applications of the new materials

  11. Role of surface energy on the morphology and optical properties of GaP micro & nano structures grown on polar and non-polar substrates

    Science.gov (United States)

    Roychowdhury, R.; Kumar, Shailendra; Wadikar, A.; Mukherjee, C.; Rajiv, K.; Sharma, T. K.; Dixit, V. K.

    2017-10-01

    Role of surface energy on the morphology, crystalline quality, electronic structure and optical properties of GaP layer grown on Si (001), Si (111), Ge (111) and GaAs (001) is investigated. GaP layers are grown on four different substrates under identical growth kinetics by metal organic vapour phase epitaxy. The atomic force microscopy images show that GaP layer completely covers the surface of GaAs substrate. On the other hand, the surfaces of Si (001), Si (111), Ge (111) substrates are partially covered with crystallographically morphed GaP island type micro and nano-structures. Origin of these crystallographically morphed GaP island is explained by the theoretical calculation of surface energy of the layer and corresponding substrates respectively. The nature of GaP island type micro and nano-structures and layers are single crystalline with existence of rotational twins on Si and Ge (111) substrates which is confirmed by the phi, omega and omega/2theta scans of high resolution x-ray diffraction. The electronic valence band offsets between the GaP and substrates have been determined from the valence band spectra of ultraviolet photoelectron spectroscopy. The valence electron plasmon of GaP are investigated by studying the energy values of Ga (3d) core level along with loss peaks in the energy dependent photoelectron spectra. The peak observed within the range of 3-6 eV from the Ga (3d) core level in the photoelectron spectra are associated to inter band transitions as their energy values are estimated from the pseudo dielectric function by the spectroscopic ellipsometry.

  12. Preparation of GaAs photocathodes at low temperature

    International Nuclear Information System (INIS)

    Mulhollan, G.; Clendenin, J.; Tang, H.

    1996-10-01

    The preparation of an atomically clean surface is a necessary step in the formation of negative electron affinity (NEA) GaAs. Traditional methods to this end include cleaving, heat cleaning and epitaxial growth. Cleaving has the advantage of yielding a fresh surface after each cleave, but is limited to small areas and is not suitable for specialized structures. Heat cleaning is both simple and highly successful, so it is used as a preparation method in virtually all laboratories employing a NEA source on a regular basis. Due to its high cost and complexity, epitaxial growth of GaAs with subsequent in vacuo transfer is not a practical solution for most end users of GaAs as a NEA electron source. While simple, the heating cleaning process has a number of disadvantages. Here, a variety of cleaning techniques related to preparation of an atomically clean GaAs surface without heating to 600 C are discussed and evaluated

  13. Interface dynamics and crystal phase switching in GaAs nanowires

    Science.gov (United States)

    Jacobsson, Daniel; Panciera, Federico; Tersoff, Jerry; Reuter, Mark C.; Lehmann, Sebastian; Hofmann, Stephan; Dick, Kimberly A.; Ross, Frances M.

    2016-03-01

    Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

  14. Produção de mudas de meloeiro amarelo, sob cultivo protegido, em diferentes substratos Production of yellow melon seedlings in different substrates under protected cultivation

    Directory of Open Access Journals (Sweden)

    Tânia Regina Pelizza

    2013-04-01

    Full Text Available Mudas mal formadas e debilitadas comprometem o desenvolvimento das culturas. O objetivo deste trabalho foi avaliar a produção de mudas de meloeiro amarelo, sob cultivo protegido, em diferentes substratos. Este trabalho foi conduzido em telado, na Universidade Federal de Pelotas (RS, nos meses de novembro e dezembro. Testaram-se os seguintes substratos: T1 (vermicomposto bovino puro; T2 (substrato comercial Plantmax®; T3 (substrato comercial Húmus Fértil®; T4 (vermicomposto bovino 75% + casca de arroz carbonizada 25% e T5 (solo 75% + vermicomposto bovino 25%. Foram avaliados o índice de velocidade e a percentagem de emergência do 6º ao 9º dia; a altura, o comprimento da raiz principal, a massa seca das raízes e da parte aérea das mudas de meloeiro, aos 27 dias. Os substratos que proporcionaram maior índice de velocidade de emergência das mudas de meloeiro amarelo foram Húmus Fértil®, vermicomposto bovino puro e vermicomposto bovino 75% mais casca de arroz carbonizada 25%. Maior altura da muda é obtida com o substrato Húmus Fértil®. O comprimento da raiz principal foi maior com o uso de vermicomposto bovino puro, Húmus Fértil®, vermicomposto bovino puro mais casca de arroz carbonizada (VB75+CAC25, em comparação com solo 75% mais vermicomposto bovino 25%. A massa seca de raiz foi maior quando utilizado Húmus Fértil®, em comparação com solo 75% mais vermicomposto bovino 25%. É possível utilizar substratos isolados ou em combinação para a produção de mudas de meloeiro amarelo sob cultivo protegido. Porém, deve-se evitar o uso de solo 75% em combinação com vermicomposto bovino 25%.Weak and malformed seedlings compromise the development of the crop. The objective of this study was to evaluate the production of yellow melon seedlings in different substrates under protected cultivation. The experiment was conducted in a greenhouse during November and December, at the Federal University of Pelotas (RS. The following

  15. Implantation annealing in GaAs by incoherent light

    International Nuclear Information System (INIS)

    Davies, D.E.; Ryan, T.G.; Soda, K.J.; Comer, J.J.

    1983-01-01

    Implanted GaAs has been successfully activated through concentrating the output of quartz halogen lamps to anneal in times of the order of 1 sec. The resulting layers are not restricted by the reduced mobilities and thermal instabilities of laser annealed GaAs. Better activation can be obtained than with furnace annealing but this generally requires maximum temperatures >= 1050degC. (author)

  16. Topographic changes in Ni-5at.%W substrate after annealing under conditions of buffer layer crystallization

    DEFF Research Database (Denmark)

    Wulff, Anders Christian; Mishin, Oleg; Grivel, Jean-Claude

    2012-01-01

    twin boundaries. Average groove widths increased for all boundary types. Despite the observed changes in the extent of grain boundary grooving, the mean surface roughness was almost identical before and after the additional annealing. © 2012 Published by Elsevier B.V. Selection and/or peer-review under...... and that the average depth of grain boundary grooves increased considerably for certain boundary types. Grooves at general high angle boundaries and Σ3 boundaries with large deviations from the ideal twin relationship were found to be more sensitive to the additional heat-treatment than grooves at low angle and true...

  17. Integrated function of microbial fuel cell (MFC) as bio-electrochemical treatment system associated with bioelectricity generation under higher substrate load.

    Science.gov (United States)

    Mohan, S Venkata; Raghavulu, S Veer; Peri, Dinakar; Sarma, P N

    2009-03-15

    Function of microbial fuel cell (MFC) as bio-electrochemical treatment system in concurrence with power generation was evaluated with composite chemical wastewater at high loading conditions (18.6 gCOD/l; 56.8 gTDS/l). Two dual chambered MFCs [non-catalyzed graphite electrodes; mediatorless anode] were studied separately with aerated and potassium ferricyanide catholytes under similar anodic operating conditions [mixed consortia; pH 6]. Marked improvement in power output was observed at applied higher substrate loading rate for extended period of time without any process inhibition. Catholyte nature showed significant influence on power generation [ferricyanide-651 mV; 18.22 mA; 6230 mW/kg COD(R) (500 Omega); 2321.69 mA/m(2) (100 Omega); 11.80 mW/m(3) and aerated-578 mV; 10.23mA; 2450 mW/kg COD(R) (400 Omega); 1220.68 mA/m(2) (100 Omega); 5.64 mW/m(3)] but not on wastewater treatment efficiency. Along with enhanced substrate degradation, relatively good removal of color (31%) and TDS (51%) was also observed during MFC operation, which might be attributed to the diverse bio-electrochemical processes triggered due to substrate metabolism and subsequent in situ bio-potential (voltage) generation. Apart from power generation, various unit operations pertaining to wastewater treatment viz., biological (anaerobic) process, electrochemical decomposition and electrochemical oxidation were found to occur symbiotically in the anode chamber. Among them anaerobic metabolism is considered to be a crucial and important rate limiting step. In view of inherent advantages, function of MFC as integrated bio-electrochemical treatment system in the direction of various wastewater treatment operations can be exploited.

  18. A novel nano-structured GaAs solar cell

    Science.gov (United States)

    Liang, Dong; Gu, Anjia; Huo, Yijie; Yan, Jingzhou; Li, Shuang; Garnett, Erik; Pickett, Evan; Kang, Yangsen; Tan, Meiyueh; Cerruto, Antonio Xavier; Zhu, Jia; Hsu, Ching-Mei; Yao, Yan; Riaziat, Majid; Cui, Yi; Harris, James S.

    2011-03-01

    In this presentation, we will demonstrate a novel solar cell with nano-structured dense arrays of single crystal GaAs conformally grown on nanopillar templates with wafer-scale uniformity. The template is prepared via plasma enhanced etching with a monolayer of Si O2 nanospheres as a mask followed by wet chemical etching. The GaAs p-n junction with an AlGaAs passivation window layer is grown via metal-organic chemical vapor deposition (MOCVD). The rectangular shape of the nano single crystal GaAs reveals anisotropic lateral growth rates of GaAs along (011) and (01 1 directions, which can be engineered by tuning the As H3 flow and temperature during growth. Optical absorption measurements show the outstanding light trapping properties of the nano-structured cell, which agree with the simulation results. I-V characteristics show an efficiency of 1.67% for the nano GaAs solar cell, which is 15% higher than its planar control cell with the same thickness of 200nm. The efficiency is the highest among all the large area GaAs nanowire core-shell solar cells reported in literature by 2010.

  19. Growth and electronic properties of two-dimensional systems on (110) oriented GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, F.

    2005-07-01

    As the only non-polar plane the (110) surface has a unique role in GaAs. Together with Silicon as a dopant it is an important substrate orientation for the growth of n-type or p-type heterostructures. As a consequence, this thesis will concentrate on growth and research on that surface. In the course of this work we were able to realize two-dimensional electron systems with the highest mobilities reported so far on this orientation. Therefore, we review the necessary growth conditions and the accompanying molecular process. The two-dimensional electron systems allowed the study of a new, intriguing transport anisotropy not explained by current theory. Moreover, we were the first growing a two-dimensional hole gas on (110) GaAs with Si as dopant. For this purpose we invented a new growth modulation technique necessary to retrieve high mobility systems. In addition, we discovered and studied the metal-insulator transition in thin bulk p-type layers on (110) GaAs. Besides we investigated the activation process related to the conduction in the valence band and a parallelly conducting hopping band. The new two-dimensional hole gases revealed interesting physics. We studied the zero B-field spin splitting in these systems and compared it with the known theory. Furthermore, we investigated the anisotropy of the mobility. As opposed to the expectations we observed a strong persistent photoconductivity in our samples. Landau levels for two dimensional hole systems are non-linear and can show anticrossings. For the first time we were able to resolve anticrossings in a transport experiment and study the corresponding activation process. Finally, we compared these striking results with theoretical calculations. (orig.)

  20. Antisites and anisotropic diffusion in GaAs and GaSb

    KAUST Repository

    Tahini, H. A.

    2013-10-02

    The significant diffusion of Ga under Ga-rich conditions in GaAs and GaSb is counter intuitive as the concentration of Ga vacancies should be depressed although Ga vacancies are necessary to interpret the experimental evidence for Ga transport. To reconcile the existence of Ga vacancies under Ga-rich conditions, transformation reactions have been proposed. Here, density functional theory is employed to calculate the formation energies of vacancies on both sublattices and the migration energy barriers to overcome the formation of the vacancy-antisite defect. Transformation reactions enhance the vacancy concentration in both materials and migration energy barriers indicate that Ga vacancies will dominate.

  1. Analysis of noise spectra in GaAs and GaN Schottky barrier diodes

    International Nuclear Information System (INIS)

    Pardo, D; Grajal, J; Mencía, B; Pérez, S; Mateos, J; González, T

    2011-01-01

    The Monte Carlo method is applied in this paper to characterize the noise spectra of GaAs and GaN Schottky barrier diodes operating under static and time varying conditions. We show the influence of the structure of the diode and working regimes on the noise spectrum of the diodes. Besides, the paper evaluates the capabilities of published analytical models to describe the noise spectra in Schottky diodes under time varying conditions. This is a further step toward the development of a design tool that integrates both the electrical response and the intrinsic noise generated in the devices

  2. Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance

    Directory of Open Access Journals (Sweden)

    O. G. Ibarra-Manzano

    2012-02-01

    Full Text Available Optical spectra of light reflection are detected under an influence of ultrasonic wave (UWon a GaAs wafer. The differential spectrum is calculated as a difference between those taken under UW and without that influence on a sample. This acousto-optic differential reflectance(AODR spectrum contains some bands that represent the energetic levels of the shallow centers in a sample. A physical basis of this technique is related to a perturbation of local states by UW. Here, a method is developed for characterization of local states at the surfaces and interfaces in crystals and low-dimensional epitaxial structures based on microelectronics materials. A theoretical model is presented to explain AODR spectra. Also, experiments using epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimental results show that acousto-optic reflectance is an effective tool for characterization of shallow trapping centers in epitaxial semiconductor structures.En este trabajo, utilizamos el espectro de la luz reflejada en una muestra de Arsenuro de Galio (GaAs bajo la influencia de una onda ultrasónica. El diferencial espectral es calculado como una diferencia entre el espectro del material obtenido bajo la influencia del ultrasonido y aquél obtenido sin dicha influencia. Este diferencial de reflectancia espectral acusto-óptico (AODR contiene algunas bandas que representan los niveles energéticos de los centros en la superficie de la muestra. Esta técnica está basada en la perturbación de los estados locales generada por el ultrasonido. Particularmente, este trabajo presenta un método para caracterizar los estados locales en la superficie y las interfaces en los cristales, así como estructuras epiteliales de baja dimensión basadas en materiales semiconductores. Para ello, se presenta un modelo teórico para explicar dicho espectro de reflectancia diferencial (AODR. También se realizaron experimentos con estructuras de GaAs epitelial

  3. Biaxially stressed excitons in GaAs/AlGaAs quantum wells grown on Si substrates

    Science.gov (United States)

    Jagannath, C.; Zemon, S.; Norris, P.; Elman, B. S.

    1987-10-01

    Photoluminescence and photoluminescence excitation spectroscopies are utilized to study excitons in GaAs/AlGaAs quantum wells (QW's) fabricated by molecular beam epitaxy on a GaAs buffer layer grown on a Si substrate. The buffer layer was grown by metalorganic vapor phase epitaxy. The experimental results are understood in terms of a uniform biaxial tension of approximately 3 kbar present in the plane of growth for both the QW's and the GaAs buffer. An important consequence of the biaxial tension is that for QW's with well widths larger than about 15 nm the light-hole and heavy-hole subbands cross each other in energy, resulting in a light-hole exciton energy lower than that of the heavy-hole exciton, opposite to the case of QW's grown on GaAs substrates.

  4. Reactive Ion Beam Etching of GaAs and Related Compounds in an Inductively Coupled Plasma of Cl(2)-Ar Mixture

    Energy Technology Data Exchange (ETDEWEB)

    Abernathy, C.R.; Hahn, Y.B.; Hays, D.; Lambers, E.S.; Lee, J.W.; Pearton, S.J.; Shul, R.J.; Vawter, G.A.

    1998-11-23

    Reactive ion beam etching (RD3E) of GaAs, GaP, AIGaAs and GaSb was performed in a Cl2-Ar mixture using an Inductively Coupled Plasma (ICP) source. `The etch rates and yields were strongly affected by ion energy and substrate temperature. The RJBE was dominated by ion-assisted etching at <600 eV and by physical sputtering beyond 600 eV. The temperature dependence of the etch rates revealed three different regimes, depending on the substrate temperature: 1) sputtering-etch limited, 2) products-resorption limited, and 3) mass-transfer limited regions. GaSb showed the overall highest etch rates, while GaAs and AIGaAs were etched at the same rates. The etched features showed extremely smooth morphologies with anisotropic sidewalls.

  5. Distribution of α and β phases in the coexistence regime in MnAs(0001) layers grown on GaAs(111)B

    International Nuclear Information System (INIS)

    Takagaki, Y.; Wiebicke, E.; Daeweritz, L.; Ploog, K.H.

    2004-01-01

    The discontinuous change in the lattice constant that occurs at the first-order phase transition between α- and β-MnAs gives rise to a coexistence of the two phases in MnAs layers grown on GaAs substrates. When the GaAs substrates are oriented in the (111)B direction, the c axis of MnAs is aligned normal to the growth plane. We identify the domain structure of α- and β-MnAs for this crystal orientation by utilizing the different reactivities of the two phases against wet chemical etching. Submicrometer-size islands of α-MnAs are found to be interwoven in a honeycomblike network of β-MnAs. We also show that this domain structure combined with strain effects results in a formation of MnAs lumps by etching

  6. Growth initiation processes for GaAs and AlGaAs in CBE

    CERN Document Server

    Hill, D

    2002-01-01

    'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the surface. The average growth rate during the transient period is equal to that of subsequent 'post-transient' period. However it is not certain as to whether the growth rate is constant throughout the transient period. The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures betwee...

  7. Physical properties of (GaAs)1-x(Ge2)x: Influence of growth direction

    International Nuclear Information System (INIS)

    Rodriguez, A.G.; Navarro-Contreras, H.; Vidal, M.A.

    2001-01-01

    (GaAs) 1-x (Ge 2 ) x metastable alloys were epitaxially grown on (001), (111), (112), and (113) GaAs by rf magnetron sputtering. A different long-range order parameter behavior with Ge concentration is observed for each growth direction. This provides a direct evidence that growth direction affects the long-range order-disorder transition exhibited by these alloys. The epitaxial growth of these alloys was modeled by a Monte Carlo simulation. The good agreement between the experimental and modeled long-range order parameter evidences that atomic ordering in these alloys is ruled mainly by growth direction and the avoidance of the formation of 'wrong' atomic pairs of As-As and Ga-Ga, and not by thermodynamic factors. On the other hand, measurements of the optical gap and Raman scattering, show that the optical properties are governed by near-neighbor correlations and therefore by their short-range order. Hence, the substrate orientation and the long-range order have negligible effect on the optical properties. Fitting the experimental data of the optical gap, we obtained linear expressions that show the fundamental gap behavior with Ge concentration of some of these alloys at room temperature. For 0 0 (x)=1.43-2.99x eV and E 0 (x)=0.45+0.35x eV, respectively

  8. Effect of catalyst diameter on vapour-liquid-solid growth of GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    O' Dowd, B. J., E-mail: odowdbj@tcd.ie; Shvets, I. V. [CRANN, School of Physics, Trinity College, the University of Dublin, Dublin D2 (Ireland); Wojtowicz, T.; Kolkovsky, V.; Wojciechowski, T.; Zgirski, M. [Institute of Physics, Polish Academy of Sciences, Warsaw 02-668 (Poland); Rouvimov, S. [Notre Dame Integrated Imaging Facility (NDIIF), University of Notre Dame, Notre Dame, Indiana 46556 (United States); Liu, X.; Pimpinella, R.; Dobrowolska, M.; Furdyna, J. [Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)

    2014-08-14

    GaAs nanowires were grown on (111)B GaAs substrates using the vapour-liquid-solid mechanism. The Au/Pt nanodots used to catalyse wire growth were defined lithographically and had varying diameter and separation. An in-depth statistical analysis of the resulting nanowires, which had a cone-like shape, was carried out. This revealed that there were two categories of nanowire present, with differing height and tapering angle. The bimodal nature of wire shape was found to depend critically on the diameter of the Au-Ga droplet atop the nanowire. Transmission electron microscopy analysis also revealed that the density of stacking faults in the wires varied considerably between the two categories of wire. It is believed that the cause of the distinction in terms of shape and crystal structure is related to the contact angle between the droplet and the solid-liquid interface. The dependency of droplet diameter on contact angle is likely related to line-tension, which is a correction to Young's equation for the contact angle of a droplet upon a surface. The fact that contact angle may influence resulting wire structure and shape has important implications for the planning of growth conditions and the preparation of wires for use in proposed devices.

  9. Tandem Solar Cells Using GaAs Nanowires on Si: Design, Fabrication, and Observation of Voltage Addition.

    Science.gov (United States)

    Yao, Maoqing; Cong, Sen; Arab, Shermin; Huang, Ningfeng; Povinelli, Michelle L; Cronin, Stephen B; Dapkus, P Daniel; Zhou, Chongwu

    2015-11-11

    Multijunction solar cells provide us a viable approach to achieve efficiencies higher than the Shockley-Queisser limit. Due to their unique optical, electrical, and crystallographic features, semiconductor nanowires are good candidates to achieve monolithic integration of solar cell materials that are not lattice-matched. Here, we report the first realization of nanowire-on-Si tandem cells with the observation of voltage addition of the GaAs nanowire top cell and the Si bottom cell with an open circuit voltage of 0.956 V and an efficiency of 11.4%. Our simulation showed that the current-matching condition plays an important role in the overall efficiency. Furthermore, we characterized GaAs nanowire arrays grown on lattice-mismatched Si substrates and estimated the carrier density using photoluminescence. A low-resistance connecting junction was obtained using n(+)-GaAs/p(+)-Si heterojunction. Finally, we demonstrated tandem solar cells based on top GaAs nanowire array solar cells grown on bottom planar Si solar cells. The reported nanowire-on-Si tandem cell opens up great opportunities for high-efficiency, low-cost multijunction solar cells.

  10. Element specific spin and orbital moments of nanoscale CoFeB amorphous thin films on GaAs(100

    Directory of Open Access Journals (Sweden)

    Yu Yan

    2016-09-01

    Full Text Available CoFeB amorphous films have been synthesized on GaAs(100 and studied with X-ray magnetic circular dichroism (XMCD and transmission electron microscopy (TEM. We have found that the ratios of the orbital to spin magnetic moments of both the Co and Fe in the ultrathin amorphous film have been enhanced by more than 300% compared with those of the bulk crystalline Co and Fe, and specifically a large orbital moment of 0.56 μB from the Co atoms has been observed and at the same time the spin moment of the Co atoms remains comparable to that of the bulk hcp Co. The results indicate that the large uniaxial magnetic anisotropy (UMA observed in the ultrathin CoFeB film on GaAs(100 is related to the enhanced spin-orbital coupling of the Co atoms in the CoFeB. This work offers experimental evidences of the correlation between the UMA and the element specific spin and orbital moments in the CoFeB amorphous film on the GaAs(100 substrate, which is of significance for spintronics applications.

  11. Fabrication of nanostructures on Si(1 0 0) and GaAs(1 0 0) by local anodic oxidation

    International Nuclear Information System (INIS)

    Cervenka, Jiri; Kalousek, Radek; Bartosik, Miroslav; Skoda, David; Tomanec, Ondrej; Sikola, Tomas

    2006-01-01

    Atomic force microscopes have become useful tools not only for observing surface morphology and nanostructure topography but also for fabrication of various nanostructures itself. In this paper, the application of AFM for fabrication of nanostructures by local anodic oxidation (LAO) of Si(1 0 0) and GaAs(1 0 0) surfaces is presented. A special attention is paid to finding relations between the size of oxide nanolines (height and half-width) and operational parameters as tip-sample voltage and tip writing speed. It was demonstrated that the formation of silicon oxide lines obeys the Cabrera-Mott theory, i.e. the height of the lines grow, linearly with tip-sample voltage and is inversely proportional to logarithm of tip writing speed. As for GaAs substrates, the oxide line height grows linearly with tip-sample voltage as well but LAO exhibits a certain deviation from this theory. It is shown that the selective chemical etching of Si or GaAs ultrathin films processed by LAO makes it possible to use these films as nanolithographic masks for further nanotechnologies, e.g. fabrication of metallic nanostructures by ion-beam bombardment. The ability to control LAO and tip motion can be utilized in fabrication of complex nanostructures finding their applications in nanoelectronic devices, nanophotonics and other high-tech areas

  12. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method

    Science.gov (United States)

    Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C.

    2016-04-01

    Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

  13. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD Method.

    Science.gov (United States)

    Wang, Ying; Yang, Zaixing; Wu, Xiaofeng; Han, Ning; Liu, Hanyu; Wang, Shuobo; Li, Jun; Tse, WaiMan; Yip, SenPo; Chen, Yunfa; Ho, Johnny C

    2016-12-01

    Growing high-quality and low-cost GaAs nanowires (NWs) as well as fabricating high-performance NW solar cells by facile means is an important development towards the cost-effective next-generation photovoltaics. In this work, highly crystalline, dense, and long GaAs NWs are successfully synthesized using a two-source method on non-crystalline SiO2 substrates by a simple solid-source chemical vapor deposition method. The high V/III ratio and precursor concentration enabled by this two-source configuration can significantly benefit the NW growth and suppress the crystal defect formation as compared with the conventional one-source system. Since less NW crystal defects would contribute fewer electrons being trapped by the surface oxides, the p-type conductivity is then greatly enhanced as revealed by the electrical characterization of fabricated NW devices. Furthermore, the individual single NW and high-density NW parallel arrays achieved by contact printing can be effectively fabricated into Schottky barrier solar cells simply by employing asymmetric Ni-Al contacts, along with an open circuit voltage of ~0.3 V. All these results indicate the technological promise of these high-quality two-source grown GaAs NWs, especially for the realization of facile Schottky solar cells utilizing the asymmetric Ni-Al contact.

  14. Bulk GaAs as a solar neutrino detector

    Energy Technology Data Exchange (ETDEWEB)

    Gavrin, V.N.; Kozlova, Y.P. E-mail: gavrin@adonis.iasnet.ru; Veretenkin, E.P.; Bowles, T.J.; Eremin, V.K.; Verbitskaya, E.M.; Markov, A.V.; Polyakov, A.Y.; Koshelev, O.G.; Morozova, V.F

    2001-06-21

    A GaAs detector may offer the unique possibility to independently study neutrino properties and solar physics. The ability to measure the flux of p-p, {sup 7}Be and pep solar neutrinos would allow one to approach a solution of the 'solar neutrino problem', i.e. the explanation of the significant deficit in observed capture rate of solar neutrinos. A large GaAs solar neutrino detector would allow to measure parameters for possible Mikheyev-Smirnov-Wolfenstein neutrino oscillations with unprecedented precision. A model-independent test for sterile neutrinos is also possible. A direct measurement of the temperature profile of the Sun center appears feasible. A GaAs detector would also provide the ability to observe neutral current interactions in addition to addressing a wide range of other interesting physics. In order to measure the p-p, pep and {sup 7}Be neutrinos a detector is required with low threshold (< 350 keV), good energy resolution (< 2 keV) and low background. A GaAs solid-state detector could meet the listed requirements. A large GaAs detector would be composed of approximately 40,000 intrinsic GaAs crystals, each weighting 3.2 kg. Such a detector would have a mass of 125 ton and would contain 60 ton of Ga occupying a volume of roughly 3 m on one side. Previous efforts by many groups have resulted in producing very small detectors with reasonably good resolution. However, it has thus far proved impossible to make large detectors with good resolution. Thus, a solar neutrino detector such as the one described above is obviously very ambitious, but the scientific motivation is sufficiently high that we have begun a research and development program with the goal of determining the technical feasibility of constructing large GaAs crystals with the requisite electronic properties to serve as particle detectors.

  15. 3-D GaAs radiation detectors

    CERN Document Server

    Meikle, A R; Ledingham, Kenneth W D; Marsh, J H; Mathieson, K; O'Shea, V; Smith, K M

    2002-01-01

    A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 mu m and a pitch of 210 mu m. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulati...

  16. 3-D GaAs radiation detectors

    International Nuclear Information System (INIS)

    Meikle, A.R.; Bates, R.L.; Ledingham, K.; Marsh, J.H.; Mathieson, K.; O'Shea, V.; Smith, K.M.

    2002-01-01

    A novel type of GaAs radiation detector featuring a 3-D array of electrodes that penetrate through the detector bulk is described. The development of the technology to fabricate such a detector is presented along with electrical and radiation source tests. Simulations of the electrical characteristics are given for detectors of various dimensions. Laser drilling, wet chemical etching and metal evaporation were used to create a cell array of nine electrodes, each with a diameter of 60 μm and a pitch of 210 μm. Electrical measurements showed I-V characteristics with low leakage currents and high breakdown voltages. The forward and reverse I-V measurements showed asymmetrical characteristics, which are not seen in planar diodes. Spectra were obtained using alpha particle illumination. A charge collection efficiency of 50% and a S/N ratio of 3 : 1 were obtained. Simulations using the MEDICI software package were performed on cells with various dimensions and were comparable with experimental results. Simulations of a nine-electrode cell with 10 μm electrodes with a 25 μm pitch were also performed. The I-V characteristics again showed a high breakdown voltage with a low leakage current but also showed a full depletion voltage of just 8 V

  17. The Features of GaAs and GaP Semiconductor Cathodes in an Infrared Converter System

    Science.gov (United States)

    Kurt, H. Hilal; Tanrıverdi, Evrim

    2017-07-01

    The aim of this study is to examine the electrical and optical comparative analysis of semi-insulating GaAs and GaP photoconductive electrodes in an infrared converter system with a resistivity of >107 Ω cm for the same interelectrode distance d and gas pressure p experimentally and theoretically, when the discharge cell has been filled by argon. To provide the stability of the semiconductor electrode in Ar media, the experiments were carried out in Townsend and glow discharge regimes for various parameter sets of pressure, interelectrode gap and discharge voltage. When the discharge exceeds a critical voltage value, some N-shape CVC s, which stem from both semiconductors and Ar gas, have been observed. To compare the features of the GaAs and GaP cathodes, the COMSOL multiphysics programme is used under the Ar media. The mean electron energy, thermal velocity, surface charge density, space charge and initial electron densities, and electron mobilities have been calculated for both semiconductor materials. It has been found that the electron mobility μe, electron thermal velocity, surface charge density σ and mean electron energy of GaAs is higher than those of GaP; hence, GaAs has better opto-electronic features compared to GaP. In addition, the experiments on the optical explorations prove that GaAs exhibit better optical response in the infrared region. The explored transport characteristics of the semiconductor electrodes are of importance, and they have to be taken into account when studying plasma cells.

  18. Infrared reflection spectra of multilayer epitaxial heterostructures with embedded InAs and GaAs layers

    International Nuclear Information System (INIS)

    Seredin, P. V.; Domashevskaya, E. P.; Lukin, A. N.; Arsent'ev, I. N.; Vinokurov, D. A.; Tarasov, I. S.

    2008-01-01

    The effect of the thickness of embedded InAs and GaAs layers on the infrared reflection spectra of lattice vibrations for AlInAs/InAs/AlInAs, InGaAs/GaAs/InGaAs, and AlInAs/InGaAs/GaAs/InGaAs/AlInAs multilayer epitaxial heterostructures grown by MOC hydride epitaxy on InP (100) substrates is studied. Relative stresses emerging in the layers surrounding the embedded layers with variation in the number of monolayers from which the quantum dots are formed and with variation the thickness of the layers themselves surrounding the embedded layers are evaluated.

  19. Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks

    Directory of Open Access Journals (Sweden)

    Kangho Kim

    2013-01-01

    Full Text Available The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes. Anodized aluminum oxide (AAO masks are prepared from an aluminum foil by a two-step anodization method. Inductively coupled plasma dry etching is used to etch and define the nanoarray structures on top of an InGaP window layer of the GaAs solar cells. The inverted-cone-shaped nanoholes with a surface diameter of about 50 nm are formed on the top surface of the solar cells after the AAO mask removal. Photovoltaic and optical characteristics of the GaAs solar cells with and without the nanohole arrays are investigated. The reflectance of the AAO nanopatterned samples is lower than that of the planar GaAs solar cell in the measured range. The short-circuit current density increased up to 11.63% and the conversion efficiency improved from 10.53 to 11.57% under 1-sun AM 1.5 G conditions by using the nanohole arrays. Dependence of the efficiency enhancement on the etching depth of the nanohole arrays is also investigated. These results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the light absorption and, in turn, the conversion efficiency of the GaAs solar cell.

  20. Offshore Substrate

    Data.gov (United States)

    California Department of Resources — This shapefile displays the distribution of substrate types from Pt. Arena to Pt. Sal in central/northern California. Originally this data consisted of seven paper...

  1. Impact of Gd2O3 passivation layer on interfacial and electrical properties of atomic-layer-deposited ZrO2 gate dielectric on GaAs

    Science.gov (United States)

    Gong, Youpin; Zhai, Haifa; Liu, Xiaojie; Kong, Jizhou; Wu, Di; Li, Aidong

    2014-02-01

    ZrO2 gate dielectric films were fabricated on n-GaAs substrates by atomic layer deposition (ALD), using metal organic chemical vapor deposition (MOCVD)-derived ultrathin Gd2O3 film as interfacial control layer between ZrO2 and n-GaAs. The interfacial structure, capacitance-voltage and current-voltage properties of ZrO2/n-GaAs and ZrO2/Gd2O3/n-GaAs metal-oxide-semiconductor (MOS) capacitors have been investigated. The introduction of an ultrathin Gd2O3 control layer can effectively suppress the formation of As oxides and high valence Ga oxide at the high k/GaAs interface which evidently improved the electrical properties of GaAs-based MOS capacitors, such as higher accumulation capacitance and lower leakage current density. It was found that the current conduction mechanism of MOS capacitors varied from Poole-Frenkel emission to Schottky-Richardson emission after introducing the thin Gd2O3 layer. The band alignments of interfaces for ZrO2/GaAs and ZrO2/Gd2O3/GaAs were established, which indicates that the conduction band offset (CBO) for ZrO2/GaAs and ZrO2/Gd2O3/GaAs stacks are ˜1.45 and ˜1.62 eV, correspondingly.

  2. Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source

    Energy Technology Data Exchange (ETDEWEB)

    Boucher, Jason [University of Oregon; Ritenour, Andrew [University of Oregon; Boettcher, Shannon W. [University of Oregon

    2013-04-29

    Towards low-cost high-efficiency GaAs photovoltaics and photoelectrodes grown via vapor transport from a solid source GaAs is an attractive material for thin-film photovoltaic applications, but is not widely used for terrestrial power generation due to the high cost of metal-organic chemical vapor deposition (MOCVD) techniques typically used for growth. Close space vapor transport is an alternative that allows for rapid growth rates of III-V materials, and does not rely on the toxic and pyrophoric precursors used in MOCVD. We characterize CSVT films of GaAs using photoelectrochemical current-voltage and quantum efficiency measurements. Hole diffusion lengths which exceed 1.5 um are extracted from internal quantum efficiency measurements using the Gartner model. Device physics simulations suggest that solar cells based on these films could reach efficiencies exceeding 24 %. To reach this goal, a more complete understanding of the electrical properties and characterization of defects will be necessary, including measurements on complete solid-state devices. Doping of films is achieved by using source material containing the desired impurity (e.g., Te or Zn). We discuss strategies for growing III-V materials on inexpensive substrates that are not lattice-matched to GaAs.

  3. Thermal Stability of GaAs Solar Cells for High Temperature Applications

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Yukun; Faucher, Joseph; Jung, Daehwan; Vaisman, Michelle; McPheeters, Clay; Sharps, Paul; Perl, Emmett; Simon, John; Steiner, Myles; Friedman, Daniel; Lee, Minjoo Larry

    2016-11-21

    The characteristics of GaAs solar cells after 200 hours of annealing at 400-450 degrees C are reported. The room-temperature reflectivity and external quantum efficiency (EQE) are unchanged after such heat treatments, and peak EQE values of 90% are observed both before and after. At an operating temperature of 400 degrees C, the performance of annealed cells was only slightly worse than cells that had not undergone any annealing; Voc = 0.55 V and FF = 66% were demonstrated for annealed cells tested at 400 degrees C under strong optical injection. These results constitute a promising first step towards photovoltaic applications that demand stable operation at elevated temperatures.

  4. Circularly polarized lasing in chiral modulated semiconductor microcavity with GaAs quantum wells

    OpenAIRE

    Demenev, A. A.; Kulakovskii, V. D.; Schneider, C.; Brodbeck, S.; Kamp, M.; Höfling, S.; Lobanov, S. V.; Weiss, T.; Gippius, N. A.; Tikhodeev, S. G.

    2016-01-01

    This work has been funded by Russian Scientific Foundation (Grant No. 14-12-01372) and State of Bavaria. We report close to circularly polarized lasing at ћω = 1.473 and 1.522 eV from an AlAs/AlGaAs Bragg microcavity, with 12 GaAs quantum wells in the active region and chirally etched upper distributed Bragg refractor under optical pump at room temperature. The advantage of using the chiral photonic crystal with a large contrast of dielectric permittivities is its giant optical activity, a...

  5. Effects of guanidinoacetic acid(gaa supplementation in rats with chronic renal failure(crf

    Directory of Open Access Journals (Sweden)

    Yoshiharu Tsubakihara

    2012-06-01

    *; p<0.05 vs Sham $; p<0.05 vs GAA 0In conclusion, we demonstrated a deficiency of GAA and CRT, and muscle weekness in CRF rats. However, oral GAA supplementation could recover muscle content of CRT and muscle capabilities in these rats.

  6. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    Science.gov (United States)

    Kim, Juho; Hwang, Jeongwoo; Song, Kwangsun; Kim, Namyun; Shin, Jae Cheol; Lee, Jongho

    2016-06-01

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

  7. Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

    International Nuclear Information System (INIS)

    Kim, Juho; Song, Kwangsun; Kim, Namyun; Lee, Jongho; Hwang, Jeongwoo; Shin, Jae Cheol

    2016-01-01

    Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

  8. Atomic hydrogen cleaning of GaAs photocathodes

    International Nuclear Information System (INIS)

    Poelker, M.; Price, J.; Sinclair, C.

    1997-01-01

    It is well known that surface contaminants on semiconductors can be removed when samples are exposed to atomic hydrogen. Atomic H reacts with oxides and carbides on the surface, forming compounds that are liberated and subsequently pumped away. Experiments at Jefferson lab with bulk GaAs in a low-voltage ultra-high vacuum H cleaning chamber have resulted in the production of photocathodes with high photoelectron yield (i.e., quantum efficiency) and long lifetime. A small, portable H cleaning apparatus also has been constructed to successfully clean GaAs samples that are later removed from the vacuum apparatus, transported through air and installed in a high-voltage laser-driven spin-polarized electron source. These results indicate that this method is a versatile and robust alternative to conventional wet chemical etching procedures usually employed to clean bulk GaAs

  9. Intrinsic spin lifetimes in GaAs (110) quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Georg; Roemer, Michael; Huebner, Jens; Oestreich, Michael [Institut fuer Festkoerperphysik, Gottfried Wilhelm Leibniz Universitaet Hannover, Hannover (Germany); Schuh, Dieter; Wegscheider, Werner [Institut fuer Experimentelle und Angewandte Physik, Universitaet Regensburg (Germany)

    2009-07-01

    GaAs(110) quantum wells attract great attention due to the long spin lifetime for electron spins along the growth axis and are, therefore, of interest for future spin based optoelectronic devices. At low temperatures, optical injection of a finite spin polarization yields strongly enhanced spin dephasing due to the Bir Aronov Pikus mechanism that arises from the exchange interaction between electrons and holes. Thus, the intrinsic spin lifetime in GaAs(110) quantum wells has been unknown. In this work, the non-demolition technique of spin noise spectroscopy, which only relies on statistical spin fluctuations, is applied to GaAs(110) quantum wells in order to measure the intrinsic spin lifetimes. Furthermore, the Brownian motion of the electrons modifies the linewidth of the measured spin noise spectra due to time of flight broadening. This effect uniquely allows to study electronic motion at thermal equilibrium.

  10. Phytoplankton communities from San Francisco Bay Delta respond differently to oxidized and reduced nitrogen substrates - even under conditions that would otherwise suggest nitrogen sufficiency

    Directory of Open Access Journals (Sweden)

    Patricia M Glibert

    2014-07-01

    Full Text Available The effect of equivalent additions of nitrogen (N, 30-40 μM-N in different forms (ammonium, NH4+, and nitrate, NO3- under conditions of different light exposure on phytoplankton community composition was studied in a series of four, 5-day enclosure experiments on water collected from the nutrient-rich San Francisco Bay Delta over two years. Overall, proportionately more chlorophyll a and fucoxanthin (generally indicative of diatoms was produced per unit N taken up in enclosures enriched with NO3- and incubated at reduced (~15% of ambient light intensity than in treatments with NO3- with high (~60% of ambient light exposure or with NH4+ under either light condition. In contrast, proportionately more chlorophyll b (generally indicative of chlorophytes and zeaxanthin (generally indicative of cyanobacteria was produced in enclosures enriched with NH4+ and incubated under high light intensity than in treatments with low light or with added NO3- at either light level. Rates of maximal velocities (Vmax of uptake of N substrates, measured using 15N tracer techniques, in all enclosures enriched with NO3- were higher than those enriched with NH4+. Directionality of trends in enclosures were similar to phytoplankton community shifts observed in transects of the Sacramento River to Suisun Bay, a region in which large changes in total N quantity and form occur. These data substantiate the growing body of experimental evidence that dichotomous microbial communities develop when enriched with the same absolute concentration of oxidized vs. reduced N forms, even when sufficient N nutrient was available to the community prior to the N inoculations.

  11. Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

    Science.gov (United States)

    Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

    2017-11-01

    Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

  12. Rapid capless annealing of28Si,64Zn, and9Be implants in GaAs

    Science.gov (United States)

    Liu, S. G.; Narayan, S. Y.

    1984-11-01

    We report the use of tungsten-halogen lamps for rapid (-10 s) thermal annealing of ion-implanted (100) GaAs under AsH3/Ar and N2 atmospheres. Annealing under flowing AsH3/Ar was carried out without wafer encapsulation. Rapid capless annealing activated implants in GaAs with good mobility and surface morphology. Typical mobilities were 3700 4500 cm2/V-s for n-layers with about 2×1017cm-3 carrier concentration and 50 150 cm2/v-s for 0.1 5xl019 cm-3 doped p-layers. Rapid thermal annealing was performed in a vertical quartz tube where different gases (N2, AsH3/H2, AsH3/Ar) can be introduced. Samples were encapsulated with SiO when N2 was used. Tungsten-halogen lamps of 600 or 1000 W were utilized for annealing GaAs wafers ranging from 1 to 10 cm2 in area and 0.025 to 0.040 cm in thickness. The transient temperature at the wafer position was monitored using a fine thermocouple. We carried out experiments for energies of 30 to 200 keV, doses of 2×1012 to 1×1015 cm-2, and peak temperatures ranging from 600 to 1000‡C. Most results quoted are in the 700 to 870‡C temperature range. Data on implant conditions, optimum anneal conditions, electrical characteristics, carrier concentration profiles, and atomic profiles of the implanted layers are described.

  13. Coherent oscillations of holes in GaAs0. 86P0. 14/Al0. 7Ga0. 3As ...

    Indian Academy of Sciences (India)

    2014-02-12

    Feb 12, 2014 ... We show that in a GaAs0.86P0.14/Al0.7Ga0.3As near-surface quantum well, there is coherent oscillation of holes observed in time-resolved reflectivity signal when the top barrier of the quantum well is sufficiently thin. The quantum well states interact with the surface states under the influence of the surface ...

  14. The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires

    International Nuclear Information System (INIS)

    Marin, E. G.; Ruiz, F. G.; Godoy, A.; Tienda-Luna, I. M.; Gámiz, F.

    2015-01-01

    The impact of the L-valley population on the transport properties of GaAs cylindrical nanowires (NWs) is analyzed by numerically calculating the electron mobility under the momentum relaxation time approximation. In spite of its low contribution to the electron mobility (even for high electron populations in small NWs), it is demonstrated to have a beneficial effect, since it significantly favours the Γ-valley mobility by screening the higher Γ-valley energy subbands

  15. The unexpected beneficial effect of the L-valley population on the electron mobility of GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Marin, E. G., E-mail: egmarin@ugr.es, E-mail: franruiz@ugr.es, E-mail: agodoy@ugr.es; Ruiz, F. G., E-mail: egmarin@ugr.es, E-mail: franruiz@ugr.es, E-mail: agodoy@ugr.es; Godoy, A., E-mail: egmarin@ugr.es, E-mail: franruiz@ugr.es, E-mail: agodoy@ugr.es; Tienda-Luna, I. M.; Gámiz, F. [Departamento de Electrónica, Universidad de Granada, Av. Fuentenueva S/N, 18071, Granada (Spain)

    2015-01-12

    The impact of the L-valley population on the transport properties of GaAs cylindrical nanowires (NWs) is analyzed by numerically calculating the electron mobility under the momentum relaxation time approximation. In spite of its low contribution to the electron mobility (even for high electron populations in small NWs), it is demonstrated to have a beneficial effect, since it significantly favours the Γ-valley mobility by screening the higher Γ-valley energy subbands.

  16. Scanning microwave microscopy applied to semiconducting GaAs structures

    Science.gov (United States)

    Buchter, Arne; Hoffmann, Johannes; Delvallée, Alexandra; Brinciotti, Enrico; Hapiuk, Dimitri; Licitra, Christophe; Louarn, Kevin; Arnoult, Alexandre; Almuneau, Guilhem; Piquemal, François; Zeier, Markus; Kienberger, Ferry

    2018-02-01

    A calibration algorithm based on one-port vector network analyzer (VNA) calibration for scanning microwave microscopes (SMMs) is presented and used to extract quantitative carrier densities from a semiconducting n-doped GaAs multilayer sample. This robust and versatile algorithm is instrument and frequency independent, as we demonstrate by analyzing experimental data from two different, cantilever- and tuning fork-based, microscope setups operating in a wide frequency range up to 27.5 GHz. To benchmark the SMM results, comparison with secondary ion mass spectrometry is undertaken. Furthermore, we show SMM data on a GaAs p-n junction distinguishing p- and n-doped layers.

  17. Performance of a GaAs electron source

    International Nuclear Information System (INIS)

    Calabrese, R.; Ciullo, G.; Della Mea, G.; Egeni, G.P.; Guidi, V.; Lamanna, G.; Lenisa, P.; Maciga, B.; Rigato, V.; Rudello, V.; Tecchio, L.; Yang, B.; Zandolin, S.

    1994-01-01

    We discuss the performance improvement of a GaAs electron source. High quantum yield (14%) and constant current extraction (1 mA for more than four weeks) are achieved after a little initial decay. These parameters meet the requirements for application of the GaAs photocathode as a source for electron cooling devices. We also present the preliminary results of a surface analysis experiment, carried out by means of the RBS technique to check the hypothesis of cesium evaporation from the surface when the photocathode is in operation. (orig.)

  18. Photoluminescence of highly compensated GaAs doped with high concentration of Ge

    Science.gov (United States)

    Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

    1999-12-01

    We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

  19. Influence of Heat-Treatment on the Adhesive Strength between a Micro-Sized Bonded Component and a Silicon Substrate under Bend and Shear Loading Conditions

    International Nuclear Information System (INIS)

    Ishiyama, Chiemi

    2012-01-01

    Adhesive bend and shear tests of micro-sized bonded component have been performed to clarify the relationship between effects of heat-treatment on the adhesive strength and the bonded specimen shape using Weibull analysis. Multiple micro-sized SU-8 columns with four different diameters were fabricated on a Si substrate under the same fabrication condition. Heat-treatment can improve both of the adhesive bend and shear strength. The improvement rate of the adhesive shear strength is much larger than that of the adhesive bend strength, because the residual stress, which must change by heat-treatment, should effect more strongly on the shear loading. In case of bend type test, the adhesive bend strength in the smaller diameters (50 and 75 μm) widely vary, because the critical size of the natural defect (micro-crack) should vary more widely in the smaller diameters. In contrast, in case of shear type test, the adhesive shear strengths in each diameter of the columns little vary. This suggests that the size of the natural defects may not strongly influence on the adhesive shear strength. All the result suggests that both of the adhesive bend and shear strengths should be complicatedly affected by heat-treatment and the bonded columnar diameter

  20. Sputtering and crystalline structure modification of bismuth thin films deposited onto silicon substrates under the impact of 20-160 keV Ar+ ions

    International Nuclear Information System (INIS)

    Mammeri, S.; Ouichaoui, S.; Ammi, H.; Zemih, R.

    2010-01-01

    The sputtering of bismuth thin films induced by 20-160 keV Ar + ions has been studied using Rutherford backscattering spectrometry, scanning electron microscopy and X-ray energy dispersive and diffraction spectroscopy. These techniques revealed increasing modifications of the Bi film surfaces with increasing both ion beam energy and fluence up to their complete deterioration under irradiation conditions E = 160 keV and φ = 1.5 x 10 16 cm -2 , leaving isolated islands of preferred (0 1 2) orientation on the Si substrate. The observed surface morphology and crystalline structure evolutions are likely due to a complex interplay of interaction mechanisms involving both elastic nuclear collisions and inelastic electronic ones. The measured Bi sputtering yields versus Ar + ion fluence for a fixed ion energy exhibit a significant depression at very low φ-values followed by a steady state regime above ∼2.0 x 10 14 cm -2 . Measured sputtering yields versus Ar + ion energy with fixing ion fluence to 1.2 x 10 16 cm -2 in the upper part of the yield saturation regime are also reported. Their comparison to theoretical model and SRIM 2008 Monte Carlo simulation predictions is discussed.

  1. CELLULASES PRODUCTION UNDER SOLID STATE FERMENTATION USING AGRO WASTE AS A SUBSTRATE AND ITS APPLICATION IN SACCHARIFICATION BY TRAMETES HIRSUTA NCIM

    Directory of Open Access Journals (Sweden)

    Bhaumik R. Dave

    2014-12-01

    Full Text Available Food and energy crisis are the biggest constraint all over the world which has focused lights on need of utilizing renewable resources to meet the future demand. A promising strategy is efficient utilization of lignocellulosic waste and fermentation of the resulting sugars for production of desired metabolites or biofuel. Production of all the cellulase enzymes on wheat bran and different parameters regulating it like pH, moisture ratio (substrate: liquid, temperature and inoculum size has been optimized which found to be 4.5, 1:3, 30°C and 108 spores respectively. Salient feature of partially purified enzyme with stability in the range of 30-50°C under acidic pH range was found to be prominent for industrial applications, moreover in this study, Trametes hirsuta, an efficient cellulase producer, was observed to be an effective species for saccharification of wheat straw to enhance the sugar yield. Enzymatic hydrolysis of wheat straw with 15 FPU of cellulase from the species showed 73% yield in 20 hrs. It may prove to be a suitable choice for the industrial saccharification of lignocellulosic biomasses.

  2. Radiation effects in pigtailed GaAs and GaA1As LEDs

    International Nuclear Information System (INIS)

    Barnes, C.E.

    1981-06-01

    Permanent and transient radiation effects have been studied in Plessey pigtailed, high radiance GaAs and GaAlAs LEDs using neutron, gamma ray and X-ray sources. The radiation-induced source of degradation in these devices was determined by also examining both bare, unpigtailed LEDs and separate samples of the Corning fibers used as pigtails. No transient effects were observed in the unpigtailed LEDs during either pulsed neutron or X-ray exposure. In contrast, the Corning doped silica fibers exhibited strong transient attenuation following pulsed X-ray bombardment. Permanent neutron damage in these pigtailed LEDs consisted essentially of light output degradation in the LED itself. Permanent gamma ray effects due to a Co-60 irradiation of 1 megarad were restricted to a small increase in attenuation in the fiber. The two primary radiation effects were then transient attenuation in the fiber pigtail and permanent neutron-induced degradation of the LED

  3. Properties of ZrN films as substrate masks in liquid phase epitaxial lateral overgrowth of compound semiconductors

    International Nuclear Information System (INIS)

    Dobosz, D.; Zytkiewicz, Z.R.; Jakiela, R.; Golaszewska, K.; Kaminska, E.; Piotrowska, A.; Piotrowski, T.T.; Barcz, A.

    2005-01-01

    The usefulness of ZrN films as masks for epitaxial lateral overgrowth of GaAs and GaSb by liquid phase epitaxy is studied. It was observed that during the growth process ZrN masks are mechanically stable, they adhere strongly to the substrate and do not show any signs of degradation even at the growth temperature as high as 750 C. Moreover, perfect selectivity of GaAs and GaSb epitaxy was obtained on ZrN masked substrates ensuring the growth wide and thin layers. To study the influence of growth conditions on electrical resistivity of the mask, ZrN films deposited on GaAs substrates were annealed in various atmospheres. It was found that at temperatures higher than about 580 C the ZrN masks become highly resistive when heat-treated in hydrogen flow employed during growth. Usually, LPE growth temperature for GaAs is higher. Thus, ELO growth of GaAs by LPE becomes more difficult, though still possible, if ZrN masks are to be applied as buried electrical contacts. For GaSb ELO layers however, typical LPE growth temperature is about 480 C. This allows us to grow high quality GaSb ELO layers by LPE still preserving high electrical conductivity of ZrN mask. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. 2-Nitrobenzoate 2-Nitroreductase (NbaA) Switches Its Substrate Specificity from 2-Nitrobenzoic Acid to 2,4-Dinitrobenzoic Acid under Oxidizing Conditions

    Science.gov (United States)

    Song, Woo-Seok; Go, Hayoung; Cha, Chang-Jun; Lee, Cheolju; Yu, Myeong-Hee; Lau, Peter C. K.

    2013-01-01

    2-Nitrobenzoate 2-nitroreductase (NbaA) of Pseudomonas fluorescens strain KU-7 is a unique enzyme, transforming 2-nitrobenzoic acid (2-NBA) and 2,4-dinitrobenzoic acid (2,4-DNBA) to the 2-hydroxylamine compounds. Sequence comparison reveals that NbaA contains a conserved cysteine residue at position 141 and two variable regions at amino acids 65 to 74 and 193 to 216. The truncated mutant Δ65-74 exhibited markedly reduced activity toward 2,4-DNBA, but its 2-NBA reduction activity was unaffected; however, both activities were abolished in the Δ193-216 mutant, suggesting that these regions are necessary for the catalysis and specificity of NbaA. NbaA showed different lag times for the reduction of 2-NBA and 2,4-DNBA with NADPH, and the reduction of 2,4-DNBA, but not 2-NBA, failed in the presence of 1 mM dithiothreitol or under anaerobic conditions, indicating oxidative modification of the enzyme for 2,4-DNBA. The enzyme was irreversibly inhibited by 5,5′-dithio-bis-(2-nitrobenzoic acid) and ZnCl2, which bind to reactive thiol/thiolate groups, and was eventually inactivated during the formation of higher-order oligomers at high pH, high temperature, or in the presence of H2O2. SDS-PAGE and mass spectrometry revealed the formation of intermolecular disulfide bonds by involvement of the two cysteines at positions 141 and 194. Site-directed mutagenesis indicated that the cysteines at positions 39, 103, 141, and 194 played a role in changing the enzyme activity and specificity toward 2-NBA and 2,4-DNBA. This study suggests that oxidative modifications of NbaA are responsible for the differential specificity for the two substrates and further enzyme inactivation through the formation of disulfide bonds under oxidizing conditions. PMID:23123905

  5. A polarized photoluminescence study of strained layer GaAs photocathodes

    International Nuclear Information System (INIS)

    Mair, R.A.

    1996-07-01

    Photoluminescence measurements have been made on a set of epitaxially grown strained GaAs photocathode structures. The photocathodes are designed to exhibit a strain-induced enhancement of the electron spin polarization obtainable by optical pumping with circularly polarized radiation of near band gap energy. For the case of non-strained GaAs, the degree of spin polarization is limited to 50% by crystal symmetry. Under an appropriate uniaxial compression or tension, however, the valence band structure near the gap minimum is modified such that a spin polarization of 100% is theoretically possible. A total of nine samples with biaxial compressive strains ranging from zero to ∼0.8% are studied. X-ray diffraction analysis, utilizing Bragg reflections, is used to determine the crystal lattice structure of the samples. Luminescence spectra and luminescence circular polarization data are obtained at room temperature, ∼78 K and ∼12 K. The degree of luminescence circular polarization is used as a relative measure of the photo-excited electron spin polarization. The room temperature luminescence circular polarization data is compared with the measured electron spin polarization when the samples are used as electron photo-emitters with a negative electron affinity surface preparation. The luminescence data is also analyzed in conjunction with the crystal structure data with the goal of understanding the strain dependent valence band structure, optical pumping characteristics and spin depolarization mechanisms of the photocathode structures. A simple model is used to describe the luminescence data, obtained for the set of samples. Within the assumptions of the model, the deformation potentials a, b and d for GaAs are determined. The measured values are a = -10.16±.21 eV, b = -2.00±.05 eV and d = -4.87±.29 eV. Good agreement with published values of the deformation potentials provides support for the model used to describe the data

  6. Reliability of GaAs processes for space applications

    OpenAIRE

    Peray, J.F; Fiers, C.; Crudo, P.; Jacobelli, C.

    1992-01-01

    This paper reviews the reliability of GaAs MMICs processes for low noise and power applications in future space systems. Each technology and library element were evaluated in terms of reliability. Results present main data of each process and an understanding of the causes of each failure modes. Improvements methodology is explained and first results are showed.

  7. Gallium arsenide (GaAs) quantum photonic waveguide circuits

    Science.gov (United States)

    Wang, Jianwei; Santamato, Alberto; Jiang, Pisu; Bonneau, Damien; Engin, Erman; Silverstone, Joshua W.; Lermer, Matthias; Beetz, Johannes; Kamp, Martin; Höfling, Sven; Tanner, Michael G.; Natarajan, Chandra M.; Hadfield, Robert H.; Dorenbos, Sander N.; Zwiller, Val; O'Brien, Jeremy L.; Thompson, Mark G.

    2014-09-01

    Integrated quantum photonics is a promising approach for future practical and large-scale quantum information processing technologies, with the prospect of on-chip generation, manipulation and measurement of complex quantum states of light. The gallium arsenide (GaAs) material system is a promising technology platform, and has already successfully demonstrated key components including waveguide integrated single-photon sources and integrated single-photon detectors. However, quantum circuits capable of manipulating quantum states of light have so far not been investigated in this material system. Here, we report GaAs photonic circuits for the manipulation of single-photon and two-photon states. Two-photon quantum interference with a visibility of 94.9±1.3% was observed in GaAs directional couplers. Classical and quantum interference fringes with visibilities of 98.6±1.3% and 84.4±1.5% respectively were demonstrated in Mach-Zehnder interferometers exploiting the electro-optic Pockels effect. This work paves the way for a fully integrated quantum technology platform based on the GaAs material system.

  8. Picosecond relaxation of X-ray excited GaAs

    Czech Academy of Sciences Publication Activity Database

    Tkachenko, V.; Medvedev, Nikita; Lipp, V.; Ziaja, B.

    2017-01-01

    Roč. 24, Sep (2017), s. 15-21 ISSN 1574-1818 Institutional support: RVO:68378271 Keywords : GaAS * X-ray excitation * picosecond relaxation Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 0.908, year: 2016

  9. Terahertz radiation from delta-doped GaAs

    DEFF Research Database (Denmark)

    Birkedal, Dan; Hansen, Ole; Sørensen, Claus Birger

    1994-01-01

    Terahertz pulse emission from four different delta-doped molecular beam epitaxially grown GaAs samples is studied. We observe a decrease of the emitted THz pulse amplitude as the distance of the delta-doped layer from the surface is increased, and a change in polarity of the THz pulses as compare...

  10. Density-dependent electron scattering in photoexcited GaAs

    DEFF Research Database (Denmark)

    Mics, Zoltán; D'’Angio, Andrea; Jensen, Søren A.

    2013-01-01

    —In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density...

  11. Status of GaAs solar cell production

    Science.gov (United States)

    Yeh, Milton; Ho, Frank; Iles, Peter A.

    1989-01-01

    Recent experience in producing GaAs solar cells, to meet the full requirements of space-array manufacturers is reviewed. The main problems have been in extending MOCVD technology to provide high throughput of high quality epitaxial layers, and to integrate the other important factors needed to meet the full range of user requirements. Some discussion of evolutionary changes is also given.

  12. Effect of stoichiometry on defect distribution in cubic GaN grown on GaAs by plasma-assisted MBE

    Energy Technology Data Exchange (ETDEWEB)

    Ruvimov, S.; Liliental-Weber, Z.; Washburn, J. [California Univ., Parlier, CA (United States). Kearney Agricultural Center; Drummond, T.J.; Hafish, M.; Lee, S.R. [Sandia National Labs., Albuquerque, NM (United States)

    1996-12-31

    High resolution electron microscopy was used to study the structure of {beta}-GaN epilayers grown on (001) GaAs substrates by plasma- assisted molecular-beam-epitaxy. The rf plasma source was used to promote chemically active nitrogen. The layer quality was shown to depend on growth conditions (Ga flux and N{sub 2} flow for fixed rf power). The best quality of GaN layers was achieved by ``stoichiometric`` growth; Ga-rich layers contain a certain amount of the wurtzite phase. GaN layers contain a high density of stacking faults which drastically decreases toward the GaN surface. Stacking faults are anisotropically distributed in the GaN layer; the majority intersect the interface along lines parallel to the ``major flat`` of the GaAs substrate. This correlates well with the observed anisotropy in the intensity distribution of x-ray reflexions. Formation of stacking faults are often associated with atomic steps at the GaN- GaAs interfaces.

  13. GaAs low-energy X-ray radioluminescence nuclear battery

    Science.gov (United States)

    Zhang, Zheng-Rong; Liu, Yun-Peng; Tang, Xiao-Bin; Xu, Zhi-Heng; Yuan, Zi-Cheng; Liu, Kai; Chen, Wang

    2018-01-01

    The output properties of X-ray radioluminescence (RL) nuclear batteries with different phosphor layers were investigated by using low-energy X-ray. Results indicated that the values of electrical parameters increased as the X-ray energy increased, and the output power of nuclear battery with ZnS:Cu phosphor layer was greater than those of batteries with ZnS:Ag, (Zn,Cd)S:Cu or Y2O3:Eu phosphor layers under the same excitation conditions. To analyze the RL effects of the phosphor layers under X-ray excitation, we measured the RL spectra of the different phosphor layers. Their fluorescence emissions were absorbed by the GaAs device. In addition, considering luminescence utilization in batteries, we introduced an aluminum (Al) film between the X-ray emitter and phosphor layer. Al film is a high performance reflective material and can increase the fluorescence reaching the GaAs photovoltaic device. This approach significantly improved the output power of the battery.

  14. Atomic structures of a monolayer of AlAs, GaAs, and InAs on Si(111)

    International Nuclear Information System (INIS)

    Lee, Geunjung; Yoon, Younggui

    2010-01-01

    We study atomic structures of a monolayer of AlAs, GaAs, and InAs on a Si(111) substrate from first-principles. The surface with the stacking sequence of ...SiSiMAsSiAs is energetically more stable than the surface with the stacking sequence of ...SiSiSiAsMAs, where M is Al, Ga, or In. The atomic structure of the three top layers of the low-energy surfaces are quite robust, irrespective of M, and the atomic structure of the AlAsSiAs terminated surface and that of the GaAsSiAs terminated surface are very similar. For the high-energy AsMAs terminated surfaces, the broken local tetrahedral symmetry plays an important role in the atomic structures. The calculated atomic structures of InAs on the Si(111) substrate depart most from the structure of crystalline Si.

  15. Strain relaxation of GaAs/Ge crystals on patterned Si substrates

    Energy Technology Data Exchange (ETDEWEB)

    Taboada, A. G., E-mail: gonzalez@phys.ethz.ch; Kreiliger, T.; Falub, C. V.; Känel, H. von [Laboratory for Solid State Physics, ETH Zürich, Otto-Stern-Weg 1, CH-8093 Zürich (Switzerland); Isa, F.; Isella, G. [L-NESS, Department of Physics, Politecnico di Milano, via Anzani 42, I-22100 Como (Italy); Salvalaglio, M.; Miglio, L. [L-NESS, Department of Materials Science, Università di Milano-Bicocca, via Cozzi 55, I-20125 Milano (Italy); Wewior, L.; Fuster, D.; Alén, B. [IMM, Instituto de Microelectrónica de Madrid (CNM, CSIC), C/Isaac Newton 8, E-28760 Tres Cantos, Madrid (Spain); Richter, M.; Uccelli, E. [Functional Materials Group, IBM Research-Zürich, Säumerstrasse 4, CH-8803 Rüschlikon (Switzerland); Niedermann, P.; Neels, A.; Dommann, A. [Centre Suisse d' Electronique et Microtechnique, Jaquet-Droz 1, CH-2002 Neuchatel (Switzerland); Mancarella, F. [CNR-IMM of Bologna, Via Gobetti 101, I-40129 Bologna (Italy)

    2014-01-13

    We report on the mask-less integration of GaAs crystals several microns in size on patterned Si substrates by metal organic vapor phase epitaxy. The lattice parameter mismatch is bridged by first growing 2-μm-tall intermediate Ge mesas on 8-μm-tall Si pillars by low-energy plasma enhanced chemical vapor deposition. We investigate the morphological evolution of the GaAs crystals towards full pyramids exhibiting energetically stable (111) facets with decreasing Si pillar size. The release of the strain induced by the mismatch of thermal expansion coefficients in the GaAs crystals has been studied by X-ray diffraction and photoluminescence measurements. The strain release mechanism is discussed within the framework of linear elasticity theory by Finite Element Method simulations, based on realistic geometries extracted from scanning electron microscopy images.

  16. Electrical isolation, thermal stability and rf loss in a multilayer GaAs planar doped barrier diode structure bombarded by H+ and Fe+ ions

    Science.gov (United States)

    Vo, V. T.; Koon, K. L.; Hu, Z. R.; Dharmasiri, C. N.; Subramaniam, S. C.; Rezazadeh, A. A.

    2004-04-01

    Electrical isolation in multilayer GaAs planar doped barrier (PDB) diode structures produced by H+ and Fe+ ion implantation were investigated. For an H+ bombardment with a dose of 1×1015cm-2, a sheet resistivity as high as 3×108 Ω/sq and thermal stability up to 400 °C has been achieved. For samples bombarded by Fe+ ions, a similar high sheet resistivity has also been achieved although a longer annealing time (15 min) and a higher annealing temperature (550 °C) were needed. The rf dissipation losses of coplanar waveguide (CPW) "thru" lines fabricated on bombarded multilayer PDBD structure samples were also examined. The measured rf losses were 1.65 dB/cm at 10 GHz and 3 dB/cm at 40 GHz, similar to the values that a CPW line exhibits on a semi-isolating GaAs substrate.

  17. Oxidation of the GaAs semiconductor at the Al2O3/GaAs junction.

    Science.gov (United States)

    Tuominen, Marjukka; Yasir, Muhammad; Lång, Jouko; Dahl, Johnny; Kuzmin, Mikhail; Mäkelä, Jaakko; Punkkinen, Marko; Laukkanen, Pekka; Kokko, Kalevi; Schulte, Karina; Punkkinen, Risto; Korpijärvi, Ville-Markus; Polojärvi, Ville; Guina, Mircea

    2015-03-14

    Atomic-scale understanding and processing of the oxidation of III-V compound-semiconductor surfaces are essential for developing materials for various devices (e.g., transistors, solar cells, and light emitting diodes). The oxidation-induced defect-rich phases at the interfaces of oxide/III-V junctions significantly affect the electrical performance of devices. In this study, a method to control the GaAs oxidation and interfacial defect density at the prototypical Al2O3/GaAs junction grown via atomic layer deposition (ALD) is demonstrated. Namely, pre-oxidation of GaAs(100) with an In-induced c(8 × 2) surface reconstruction, leading to a crystalline c(4 × 2)-O interface oxide before ALD of Al2O3, decreases band-gap defect density at the Al2O3/GaAs interface. Concomitantly, X-ray photoelectron spectroscopy (XPS) from these Al2O3/GaAs interfaces shows that the high oxidation state of Ga (Ga2O3 type) decreases, and the corresponding In2O3 type phase forms when employing the c(4 × 2)-O interface layer. Detailed synchrotron-radiation XPS of the counterpart c(4 × 2)-O oxide of InAs(100) has been utilized to elucidate the atomic structure of the useful c(4 × 2)-O interface layer and its oxidation process. The spectral analysis reveals that three different oxygen sites, five oxidation-induced group-III atomic sites with core-level shifts between -0.2 eV and +1.0 eV, and hardly any oxygen-induced changes at the As sites form during the oxidation. These results, discussed within the current atomic model of the c(4 × 2)-O interface, provide insight into the atomic structures of oxide/III-V interfaces and a way to control the semiconductor oxidation.

  18. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

    Directory of Open Access Journals (Sweden)

    Takeshi Aoki

    2015-08-01

    Full Text Available This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD, with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD. The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm−2 eV−1. Using a (111A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  19. Electrical properties of GaAs metal-oxide-semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal-organic vapor deposition/atomic layer deposition hybrid system

    Science.gov (United States)

    Aoki, Takeshi; Fukuhara, Noboru; Osada, Takenori; Sazawa, Hiroyuki; Hata, Masahiko; Inoue, Takayuki

    2015-08-01

    This paper presents a compressive study on the fabrication and optimization of GaAs metal-oxide-semiconductor (MOS) structures comprising a Al2O3 gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal-organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al2O3 in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al2O3 layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resulting MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance-voltage (C-V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (Dit) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce Dit to below 2 × 1012 cm-2 eV-1. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.

  20. Growth and characterization of α and β-phase tungsten films on various substrates

    International Nuclear Information System (INIS)

    Lee, Jeong-Seop; Cho, Jaehun; You, Chun-Yeol

    2016-01-01

    The growth conditions of tungsten thin films were investigated using various substrates including Si, Si/SiO 2 , GaAs, MgO, and Al 2 O 3 , and recipes were discovered for the optimal growth conditions of thick metastable β-phase tungsten films on Si, GaAs, and Al 2 O 3 substrates, which is an important material in spin orbit torque studies. For the Si/SiO 2 substrate, the crystal phase of the tungsten films was different depending upon the tungsten film thickness, and the transport properties were found to dramatically change with the thickness owing to a change in phase from the α + β phase to the α-phase. It is shown that the crystal phase changes are associated with residual stress in the tungsten films and that the resistivity is closely related to the grain sizes

  1. Unidirectional lateral nanowire formation during the epitaxial growth of GaAsBi on vicinal substrates

    Science.gov (United States)

    Collar, Kristen N.; Li, Jincheng; Jiao, Wenyuan; Kong, Wei; Brown, April S.

    2018-01-01

    We report on enhanced control of the growth of lateral GaAs nanowires (NWs) embedded in epitaxial (100) GaAsBi thin films enabled by the use of vicinal substrates and the growth-condition dependent role of Bi as a surfactant. Enhanced step-flow growth is achieved through the use of vicinal substrates and yields unidirectional nanowire growth. The addition of Bi during GaAsBi growth enhances Ga adatom diffusion anisotropy and modifies incorporation rates at steps in comparison to GaAs growth yielding lower density but longer NWs. The NWs grown on vicinal substrates grew unidirectionally towards the misorientation direction when Bi was present. The III/V flux ratio significantly impacts the size, shape and density of the resulting NWs. These results suggest that utilizing growth conditions which enhance step-flow growth enable enhanced control of lateral nanostructures.

  2. Discriminating a deep defect from shallow acceptors in supercell calculations: gallium antisite in GaAs

    Science.gov (United States)

    Schultz, Peter

    To make reliable first principles predictions of defect energies in semiconductors, it is crucial to discriminate between effective-mass-like defects--for which existing supercell methods fail--and deep defects--for which density functional theory calculations can yield reliable predictions of defect energy levels. The gallium antisite GaAs is often associated with the 78/203 meV shallow double acceptor in Ga-rich gallium arsenide. Within a framework of level occupation patterns, analyses of structure and spin stabilization can be used within a supercell approach to distinguish localized deep defect states from shallow acceptors such as BAs. This systematic analysis determines that the gallium antisite is inconsistent with a shallow state, and cannot be the 78/203 shallow double acceptor. The properties of the Ga antisite in GaAs are described, predicting that the Ga antisite is a deep double acceptor and has two donor states, one of which might be accidentally shallow. -- Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Company, for the U.S. Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  3. Materials Integration and Metamorphic Substrate Engineering from Silicon to Gallium Arsenide to Indium Phosphide for Advanced III-V/Silicon Photovoltaics

    Science.gov (United States)

    Carlin, Andrew M.

    Lattice-mismatched epitaxy in the III-V compound semiconductor system based on III-AsP and related alloys are of enormous importance, and considerable research interest, for many years. The reason is straightforward if one considers the limitations placed on available materials properties for devices dictated by lattice matching to the dominant substrate technologies - Si, GaAs (and/or Ge) and InP. For III-V epitaxy, the lattice constants of these substrates have defined a generation or more of device advances since growth of heterostructures possessing the same equilibrium lattice constants as the substrate yields essentially defect-free (specifically extended defect-free) materials and devices. Removing the restriction of lattice matching to current substrate technology opens a rich spectrum of bandgaps, bandgap combinations, conduction and valence band offsets, etc., that are desirable and exploitable for advancing device technologies for new functionality and greater performance. However successful exploitation of these properties requires mitigation of a variety of extended defects that result from the lattice mismatch between substrate and epitaxial heterostructures. A well known method to achieve this solution is through the use of compositionally (lattice constant-graded) buffer interlayers, in which the equilibrium lattice constants of interlayers are slowly altered by controlled changes in layer composition so that the mismatch strain between the initial substrate and the final device layers is spread across a thickness of buffer. The research accomplished has yielded success for both lattice constant ranges Si - GaAs and GaAs - InP. For the Si - GaAs system, a three step GaP nucleation process on Si has been developed and demonstrated, which maintains total avoidance of creating coalescence-related defects such as antiphase domains and stacking faults resulting from the initial III-V/IV interfaces while reducing overall threading dislocation density by

  4. Double-layer anti-reflection coating containing a nanoporous anodic aluminum oxide layer for GaAs solar cells.

    Science.gov (United States)

    Yang, Tianshu; Wang, Xiaodong; Liu, Wen; Shi, Yanpeng; Yang, Fuhua

    2013-07-29

    Multilayer anti-reflection (AR) coatings can be used to improve the efficiency of Gallium Arsenide (GaAs) solar cells. We propose an alternate method to obtain optical thin films with specified refractive indices, which is using a self-assembled nanoporous anodic aluminum oxide (AAO) template as an optical thin film whose effective refractive index can be tuned by pore-widening. Different kinds of double-layer AR coatings each containing an AAO layer were designed and investigated by finite difference time domain (FDTD) method. We demonstrate that a λ /4n - λ /4n AR coating consisting of a TiO(2) layer and an AAO layer whose effective refractive index is 1.32 realizes a 96.8% light absorption efficiency of the GaAs solar cell under AM1.5 solar spectrum (400 nm-860 nm). We also have concluded some design principles of the double-layer AR coating containing an AAO layer for GaAs solar cells.

  5. Crystal phase control in GaAs nanowires: opposing trends in the Ga- and As-limited growth regimes

    International Nuclear Information System (INIS)

    Lehmann, Sebastian; Jacobsson, Daniel; Dick, Kimberly A

    2015-01-01

    Here we demonstrate the existence of two distinct regimes for tuning crystal structure in GaAs nanowires from zinc blende to wurtzite using a single process parameter: V/III-ratio, or variation of the group V precursor flow. Extensive previous studies have shown that crystal structure is sensitive to V/III-ratio, and even that it is possible to change structure entirely using this single parameter. However, an open question has remained about whether the observed dependencies are related to growth technique or types of precursors used. Specifically, opposite trends have been reported for molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE): while wurtzite GaAs growth is reported for high nominal V/III-ratio in MBE, zinc blende GaAs is formed in MOVPE under apparently the same parameter change (increasing precursor V/III-ratio). Here we show that these observations are not necessarily contradictory, as it may first appear, by providing a consolidated picture covering all regimes in one MOVPE growth machine only. More precisely, we observe wurtzite formation for medium nominal V/III-ratios with a critical sensitivity to the balance between Ga and As supply. Slight deviations from wurtzite conditions will result in zinc blende formation for either low V/III-ratio in the As-limited regime or high V/III-ratio in the Ga-limited regime. Our observations strongly indicate that the applied growth conditions are the crucial ingredients for crystal structure control in GaAs nanowires rather than the growth technique or precursors used. (fast track communication)

  6. Germination and Growth of a Foreign Plant, Satureja sp.(Labiaceae Over Three Organic Substrates Under Controlled Conditions in the Sabana de Bogotá, Colombia

    Directory of Open Access Journals (Sweden)

    Jazmín Arias

    2003-07-01

    Bogotá, in order to determine which are the best conditions for its culture. The major germination percentage was found in the seeds sowed on control conditions (earth with a neutral and basic pH. The manure substrate showed notorious results concerning steam length, dry weight and leaf number. The third substrate, soil and trash, did not render results neither on germination or other parameters. In conclusion, if the commercial interest is to obtain a longer steams, greater leaf number and biomass, we recommend the manure treatment.

  7. Block copolymer-templated chemistry on Si, Ge, InP, and GaAs surfaces.

    Science.gov (United States)

    Aizawa, Masato; Buriak, Jillian M

    2005-06-29

    Patterning of semiconductor surfaces is an area of intense interest, not only for technological applications, such as molecular electronics, sensing, cellular recognition, and others, but also for fundamental understanding of surface reactivity, general control over surface properties, and development of new surface reactivity. In this communication, we describe the use of self-assembling block copolymers to direct semiconductor surface chemistry in a spatially defined manner, on the nanoscale. The proof-of-principle class of reactions evaluated here is galvanic displacement, in which a metal ion, M+, is reduced to M0 by the semiconductor, including Si, Ge, InP, and GaAs. The block copolymer chosen has a polypyridine block which binds to the metal ions and brings them into close proximity with the surface, at which point they undergo reaction; the pattern of resulting surface chemistry, therefore, mirrors the nanoscale structure of the parent block copolymer. This chemistry has the added advantage of forming metal nanostructures that result in an alloy or intermetallic at the interface, leading to strongly bound metal nanoparticles that may have interesting electronic properties. This approach has been shown to be very general, functioning on a variety of semiconductor substrates for both silver and gold deposition, and is being extended to organic and inorganic reactions on a variety of conducting, semiconducting, and insulating substrates.

  8. Quantitative dopant distributions in GaAs nanowires using atom probe tomography

    International Nuclear Information System (INIS)

    Du, Sichao; Burgess, Timothy; Gault, Baptiste; Gao, Qiang; Bao, Peite; Li, Li; Cui, Xiangyuan; Kong Yeoh, Wai; Liu, Hongwei; Yao, Lan; Ceguerra, Anna V.; Hoe Tan, Hark; Jagadish, Chennupati; Ringer, Simon P.; Zheng, Rongkun

    2013-01-01

    Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17 nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio. - Highlights: ► Probing pristine semiconductor NWs from growth substrate has been demonstrated. ► Analyzing the full diameter of a nanowire has been achieved. ► A spatial resolution better than 0.17 nm in depth has been obtained for GaAs. ► An enhanced SNR 100:2 has been achieved

  9. Quantitative dopant distributions in GaAs nanowires using atom probe tomography

    Energy Technology Data Exchange (ETDEWEB)

    Du, Sichao [School of Physics, The University of Sydney, NSW 2006 (Australia); Burgess, Timothy [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Gault, Baptiste [Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006 (Australia); School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, NSW 2006 (Australia); Department of Materials Science and Engineering, McMaster University, 1280 Main St W, Hamilton, Ontario L8S4L8 (Canada); Gao, Qiang [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Bao, Peite; Li, Li [School of Physics, The University of Sydney, NSW 2006 (Australia); Cui, Xiangyuan; Kong Yeoh, Wai; Liu, Hongwei; Yao, Lan [Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006 (Australia); Ceguerra, Anna V. [Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006 (Australia); School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, NSW 2006 (Australia); Hoe Tan, Hark; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Ringer, Simon P. [Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW 2006 (Australia); School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, NSW 2006 (Australia); Zheng, Rongkun, E-mail: rongkun.zheng@sydney.edu.au [School of Physics, The University of Sydney, NSW 2006 (Australia)

    2013-09-15

    Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimensional elemental mapping of pristine semiconductor nanowires on growth substrates by using atom probe tomography to tackle this major challenge. This highly transferrable method is able to analyze the full diameter of a nanowire, with a depth resolution better than 0.17 nm thanks to an advanced reconstruction method exploiting the specimen's crystallography, and an enhanced chemical sensitivity of better than 8-fold increase in the signal-to-noise ratio. - Highlights: ► Probing pristine semiconductor NWs from growth substrate has been demonstrated. ► Analyzing the full diameter of a nanowire has been achieved. ► A spatial resolution better than 0.17 nm in depth has been obtained for GaAs. ► An enhanced SNR 100:2 has been achieved.

  10. Photo-irradiation effects on GaAs atomic layer epitaxial growth. GaAs no genshiso epitaxial seicho ni okeru hikari reiki koka

    Energy Technology Data Exchange (ETDEWEB)

    Mashita, M.; Kawakyu, Y.; Sasaki, M.; Ishikawa, H. (Toshiba Corp., Kawasaki (Japan). Research and Development Center)

    1990-08-10

    Single atomic layer epitaxy (ALE) aims at controlling a growing film at a precision of single molecular layer. In this article, it is reported that the growth temperature range of ALE was expanded by the vertical irradiation of KrF exima laser (248 nm) onto the substrate for the ALE growth of GaAs using the metalorganic chemical vapor deposition (MOCVD) method. Thanks for the results of the above experiment, it was demonstrated that the irradiation effect was not thermal, but photochemical. In addition, this article studies the possibility of adsorption layer irradiation and surface irradiation as the photo-irradiation mechanism, and points out that coexistence of both irradiation mechanisms can be considered and, in case of exima laser, strong possibility of direct irradiation of the adsorption layer because of its high power density. Hereinafter, by using both optical growth ALE and thermal growth ALE jointly, the degree of freedom of combination of hetero ALE increases and its application to various material systems becomes possible. 16 refs., 6 figs.

  11. Real-time observation of FIB-created dots and ripples on GaAs

    International Nuclear Information System (INIS)

    Rose, F; Fujita, H; Kawakatsu, H

    2008-01-01

    We report a phenomenological study of Ga dots and ripples created by a focused ion beam (FIB) on the GaAs(001) surface. Real-time observation of dot diffusion and ripple formation was made possible by recording FIB movies. In the case of FIB irradiation with a 40 nA current of Ga + ions accelerated under 40 kV with an incidence angle of θ = 30 0 , increasing ion dose gives rise to three different regimes. In Regime 1, dots with lateral sizes in the range 50-460 nm are formed. Dots diffuse under continuous sputtering. In Regime 2, dots self-assemble into Bradley and Harper (BH) type ripples with a pseudo-period of λ = 1150 ± 25 nm. In Regime 3, ripples are eroded and the surface topology evolves into microplanes. In the case of normal incidence, FIB sputtering leads only to the formation of dots, without surface rippling

  12. Etching of GaAs substrates to create As-rich surface

    Indian Academy of Sciences (India)

    WINTEC

    All the procedures except HCl solution. (1 : 1) produce an As-rich surface. Also, none of the etchants except HF–ethanol solution produce Ga or As- rich (oxide free) surfaces. Optical microscopic study shows different etch pits produced due to etching in different solutions. Keywords. Etching; semi-insulating; XPS spectrum.

  13. Performance of diamond-like carbon-protected rubber under cyclic friction. I. Influence of substrate viscoelasticity on the depth evolution

    NARCIS (Netherlands)

    Martinez-Martinez, D.; Pal, J.P. van der; Pei, Y.T.; Hosson, J.Th.M. De

    2011-01-01

    In this paper, the influence of the viscoelastic properties of rubber substrate on the tribological behavior of DLC film-coated alkyl acrylate rubber is studied. The mechanical behavior of the rubber was first characterized by creep experiments using spherical indentations. The results were adjusted

  14. Resistance Fluctuations in GaAs Nanowire Grids

    Directory of Open Access Journals (Sweden)

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  15. Model of smoothing roughness on GaAs wafer surface by using nonabrasive chemical-and-mechanical polishing

    Directory of Open Access Journals (Sweden)

    A.V. Fomin

    2017-04-01

    Full Text Available Studied experimentally in this work has been the process of smoothing relief roughness on the GaAs wafer surface by using the method of contactless nonabrasive chemical-and-mechanical polishing under conditions of its rotational movement relatively to the polishing plate. The model of this process has been developed under assumption that the pure diffusion smoothing mechanism takes place there. It has been shown that satisfactory correspondence between respective calculated dependences and experimental results can be reached by introducing the “effective” diffusion coefficient providing account of etchant convection.

  16. Solar heating of GaAs nanowire solar cells.

    Science.gov (United States)

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

  17. Gallium arsenide (GaAs) solar cell modeling studies

    Science.gov (United States)

    Heinbockel, J. H.

    1980-01-01

    Various models were constructed which will allow for the variation of system components. Computer studies were then performed using the models constructed in order to study the effects of various system changes. In particular, GaAs and Si flat plate solar power arrays were studied and compared. Series and shunt resistance models were constructed. Models for the chemical kinetics of the annealing process were prepared. For all models constructed, various parametric studies were performed.

  18. Monolithic GaAs surface acoustic wave chemical microsensor array

    Energy Technology Data Exchange (ETDEWEB)

    HIETALA,VINCENT M.; CASALNUOVO,STEPHEN A.; HELLER,EDWIN J.; WENDT,JOEL R.; FRYE-MASON,GREGORY CHARLES; BACA,ALBERT G.

    2000-03-09

    A four-channel surface acoustic wave (SAW) chemical sensor array with associated RF electronics is monolithically integrated onto one GaAs IC. The sensor operates at 690 MHz from an on-chip SAW based oscillator and provides simple DC voltage outputs by using integrated phase detectors. This sensor array represents a significant advance in microsensor technology offering miniaturization, increased chemical selectivity, simplified system assembly, improved sensitivity, and inherent temperature compensation.

  19. Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell

    Science.gov (United States)

    2014-09-01

    Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell by Naresh C Das ARL-TR-7054 September 2014...September 2014 Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell Naresh C Das Sensors and Electron...From - To) 01/02/2014–07/15/2014 4. TITLE AND SUBTITLE Performance Comparison of Top and Bottom Contact Gallium Arsenide (GaAs) Solar Cell 5a

  20. Defects and diffusion in Si+ implanted GaAs

    International Nuclear Information System (INIS)

    Jones, K.S.; Robinson, H.G.; Deal, M.D.; Lee, C.C.; Allen, E.L.

    1993-05-01

    The effect of extended defects on the diffusion of ion implanted species is an area of concern in the development of process simulators for GaAs. This study explores the effect of type 1 extended defects including voids and dislocation loops on the diffusion of Si implanted into GaAs. Semi-insulating GaAs wafers were implanted with 1 x 10 14 /cm 2 Si + at implant temperatures between -51 C and 80 C and at energies ranging from 20 keV to 200 keV. SIMS results show that the diffusivity of Si decreases with both increasing implant temperature and increasing implant energy. At the same time extrinsic dislocation loop concentrations also increased. For the implant conditions studied, no voids were observed. The diffusion results can only be reconciled with the TEM results if the dislocation loops are behaving in a reactive rather than proactive manner. In other words, the changes in vacancy concentration that are affecting the diffusivity are also affecting the loop concentration. This model is supported by evidence that Si diffusivity is enhanced over the same time interval the dislocation loops are dissolving which is consistent with the loops having a reactive role. It remains unclear whether the existence of loops significantly affects the total concentration of vacancies and thus diffusion by acting as a competing sink

  1. Metallization systems for stable ohmic contacts to GaAs

    International Nuclear Information System (INIS)

    Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

    1986-01-01

    A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

  2. Identification a novel mononucleotide deletion mutation in GAA in pompe disease patients

    Directory of Open Access Journals (Sweden)

    Milad Ebrahimi

    2017-01-01

    Full Text Available Background: Mutations in the acid alpha-glucosidase (GAA gene usually lead to reduced GAA activity. In this study, we analyzed the mutations of GAA and GAA enzyme activity from one sibling suspected Pompe disease and their first-degree relatives. Materials and Methods: In this cross-sectional study, GAA enzyme activity assay was assessed using tandem mass spectrometry. Polymerase chain reaction and Sanger sequencing were performed for GAA analysis. Results: GAA enzyme activity was significantly decreased in patients compared to the normal range (P = 0.02. Two individuals showed ten alterations in the GAA sequence, in which one of them (c. 1650del G has not been previously described in the literature. A single Guanine deletion (del-G was detected at codon 551 in exon 12. Conclusion: According to the literature, the detected change is a novel mutation. We hypothesized that the discovered deletion in the GAA might lead to a reduced activity of the gene product.

  3. Molecular beam epitaxy of GaAs nanowires and their sustainability for optoelectronic applications. Comparing Au- and self-assisted growth methods

    Energy Technology Data Exchange (ETDEWEB)

    Breuer, Steffen

    2011-09-28

    In this work the synthesis of GaAs nanowires by molecular beam epitaxy (MBE) using the vapour-liquid-solid (VLS) mechanism is investigated. A comparison between Au- and self-assisted VLS growth is at the centre of this thesis. While the Au-assisted method is established as a versatile tool for nanowire growth, the recently developed self-assisted variation results from the exchange of Au by Ga droplets and thus eliminates any possibility of Au incorporation. By both methods, we achieve nanowires with epitaxial alignment to the Si(111) substrates. Caused by differences during nanowire nucleation, a parasitic planar layer grows between the nanowires by the Au-assisted method, but can be avoided by the self-assisted method. Au-assisted nanowires grow predominantly in the metastable wurtzite crystal structure, while their self-assisted counterparts have the zincblende structure. All GaAs nanowires are fully relaxed and the strain arising from the lattice mismatch between GaAs and Si of 4.1 % is accommodated by misfit dislocations at the interface. Self-assisted GaAs nanowires are generally found to have vertical and non-polar side facets, while tilted and polar nanofacets were described for Au-assisted GaAs nanowires. We employ VLS nucleation theory to understand the effect of the droplet material on the lateral facets. Optoelectronic applications require long minority carrier lifetimes at room temperature. We fabricate GaAs/(Al,Ga)As core-shell nanowires and analyse them by transient photoluminescence (PL) spectroscopy. The results are 2.5 ns for the self-assisted nanowires as well as 9 ps for the Au-assisted nanowires. By temperature-dependent PL measurements we find a characteristic activation energy of 77 meV that is present only in the Au-assisted nanowires. We conclude that most likely Au is incorporated from the droplets into the GaAs nanowires and acts as a deep, non-radiative recombination centre.

  4. Influence of substrate temperature on epitaxial growth of YBa2Cu3O6.9 superconducting films under laser sputtering

    International Nuclear Information System (INIS)

    Gasparov, V.A.; Dite, A.F.; Ovchinnikov, I.M.; Sorokin, N.M.; Khasanov, S.S.; Yaremenko, V.G.

    1989-01-01

    Using ac resistivity measurements, X-ray diffraction and Auger spectroscopy we have investigated the influence of SrTiO 3 substrate temperature (T s ) on the epitaxial growth of superconducting YBaCu 3 O 6.9 films evaporated by a moderate energy (∼ c films and to investigate their surface properties (Auger spectra) in situ. The Y-Ba-Cu-O thin films were evaporated from a rotated cyylindrical target of YBa 2 Cu 3 O 6.9 superconducting ceramic onto a SrTiO 3 (100) single crystal substrate which also has been rotated.The films were subsequently annealed for one hour at different temperatures in an O 2 flow in the same chamber immediatly after evaporation and cooled down slowly (100 deg C/hour) to room temperature

  5. Interface structure and composition of MoO3/GaAs(0 0 1)

    Science.gov (United States)

    Sarkar, Anirban; Ashraf, Tanveer; Grafeneder, Wolfgang; Koch, Reinhold

    2018-04-01

    We studied growth, structure, stress, oxidation state as well as surface and interface structure and composition of thermally-evaporated thin MoO3 films on the technologically important III/V-semiconductor substrate GaAs(0 0 1). The MoO3 films grow with Mo in the 6+  oxidation state. The electrical resistance is tunable by the oxygen partial pressure during deposition from transparent insulating to semi-transparant halfmetallic. In the investigated growth temperature range (room temperature to 200 °C) no diffraction spots are detected by x-ray diffraction. However, high resolution transmission electron microscopy reveals the formation of MoO3 nanocrystal grains with diameters of 5–8 nm. At the interface a  ≈3 nm-thick intermediate layer has formed, where the single-crystal lattice of GaAs gradually transforms to the nanocrystalline MoO3 structure. This interpretation is corroborated by our in situ and real-time stress measurements evidencing a two-stage growth process as well as by elemental interface analysis revealing coexistance of Ga, As, Mo, and oxygen in a intermediate layer of 3–4 nm.

  6. X-ray diffraction from single GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas

    2012-11-12

    In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

  7. Magnetic properties of Fe3O4 thin films grown on different substrates by laser ablation

    International Nuclear Information System (INIS)

    Parames, M.L.; Viskadourakis, Z.; Rogalski, M.S.; Mariano, J.; Popovici, N.; Giapintzakis, J.; Conde, O.

    2007-01-01

    Magnetite thin films have been grown onto (1 0 0)Si (1 0 0)GaAs and (0 0 0 1)Al 2 O 3 , at substrate temperatures varying from 473 to 673 K, by UV pulsed laser ablation of Fe 3 O 4 targets in reactive atmospheres of O 2 and Ar, at working pressure of 8 x 10 -2 Pa. The influence of the substrate on stoichiometry, microstructure and the magnetic properties has been studied by X-ray diffraction (XRD), conversion electron Moessbauer spectroscopy (CEMS) and magnetic measurements. Magnetite crystallites, with stoichiometry varying from Fe 2.95 O 4 to Fe 2.99 O 4 , are randomly oriented for (1 0 0)GaAs and (1 0 0)Si substrates and exhibit (1 1 1) texture if grown onto (0 0 0 1)Al 2 O 3 . Interfacial Fe 3+ diffusion, which is virtually absent for (1 0 0)Si substrates, was found for both (0 0 0 1)Al 2 O 3 and (1 0 0)GaAs, with some deleterious effect on the subsequent microstructure and magnetic behaviour

  8. Growth initiation processes for GaAs and AlGaAs in CBE

    International Nuclear Information System (INIS)

    Hill, D.

    2002-01-01

    The aim of this work was to investigate the nature of the transient period found in reflectance anisotropy (RA) measurements of high III:V BEP ratio growth of gallium arsenide (GaAs) and aluminium gallium arsenide (AIGaAs) by chemical beam epitaxy (CBE). Growth at substrate temperatures between 510-610 deg C with arsine (AsH 3 ) thermally cracked to As 2 , triethylgallium (TEGa), trimethylgallium (TMGa), trimethylaminealane (TMAA) and diethylmethylaminealane (DEMAA) at high III:V BEP ratios reveals that the transition from 'pre-growth' to 'in-growth' reconstructions is not as straightforward as that for lower III:V BEP ratio growth. Instead of the reconstruction changing directly to the usual 2x4 'in-growth' reconstruction over 1-2 seconds it passes through several other transient reconstructions over a period of up to and greater than 60s, firstly the Ga rich 4x2 then several other 2x4 As-stable reconstructions. It has been shown that at the III:V BEP ratios and substrate temperatures used in this work growth is taking place in a transitional area of the phase diagram for 'in-growth' reconstructions. At higher III:V BEP ratio growth the transition is believed to be direct, from the 'pre-growth' reconstruction to a 4x2 Ga-rich 'in-growth' reconstruction. The surfaces grown with any of the precursors are initially saturated with Ga and then as the As coverage gradually increases the reconstructions change until enough As is present on the surface for usual 2x4 'in-growth' reconstruction to stabilise. However unlike for TMGa, GaAs growth with TEGa proceeds by a non-self limiting growth mode and TEGa rapidly dissociates. The result of this is that TEGa decomposes on top of other TEGa molecules, or their fragments and due to the high flux rate this leads to a 'stacking-up' of Ga on the surface. The presence of excess Ga provides a rapid increase of surface reflectance and then its subsequent decay as the excess Ga is incorporated by the increasing As content of the

  9. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    International Nuclear Information System (INIS)

    Ma Xiangrong; Shi Wei; Ji Weili; Xue Hong

    2011-01-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch. (semiconductor devices)

  10. Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch

    Science.gov (United States)

    Xiangrong, Ma; Wei, Shi; Weili, Ji; Hong, Xue

    2011-12-01

    A 4 mm gap semi-insulating (SI) GaAs photoconductive switch (PCSS) was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear (lock-on) mode. The phenomenon is analyzed as follows: an exciton effect contributes to photoconduction in the generation and dissociation of excitons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the SI-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.

  11. Solid Source Dry Etching Process for GaAs and InP

    Science.gov (United States)

    Matsutani, Akihiro; Ohtsuki, Hideo; Koyama, Fumio

    2006-10-01

    In this study, we have demonstrated vertical and smooth inductively coupled plasma (ICP) dry etching of InP and GaAs using either solid iodine or ICl3 powder as gas sources at a low process temperature of 90 °C. We prepared solid iodine crystal and ICl3 powder in the ICP etching chamber as etching gas sources in a process chamber. Iodine or chlorine gases were supplied with a high vapor pressure from the solid source into the process chamber. Vertical and smooth etching was realized under a condition of low temperature and low bias RF power. We believe that solid iodine- and ICl3 powder-ICP etching are very simple and useful processes for InP- and GaAs-based device fabrication with a resist mask.

  12. Comparison of the reactivity of alkyl and alkyl amine precursors with native oxide GaAs(100) and InAs(100) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Henegar, A.J., E-mail: henegar1@umbc.edu; Gougousi, T., E-mail: gougousi@umbc.edu

    2016-12-30

    Graphical abstract: The interaction of the native oxides of GaAs(100) and InAs(100) with alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and TiO{sub 2} is compared. Al{sub 2}O{sub 3} if found to be a significantly better barrier against the transport of the surface native oxide during the film deposition as well as after post-deposition heat treatment. This superior blocking ability also limits the removal of the native oxides during the Al{sub 2}O{sub 3} ALD process. - Highlights: • Native oxide diffusion is required for continuous native oxide removal. • The diffusion barrier capabilities of Al{sub 2}O{sub 3} limits native oxide removal during ALD. • Arsenic oxide exhibits higher mobility from InAs compared to GaAs substrates. • Oxygen scavenging from the surface by trimethyl aluminum is confirmed. - Abstract: In this manuscript we compare the interaction of alkyl (trimethyl aluminum) and alkyl amine (tetrakis dimethylamino titanium) precursors during thermal atomic layer deposition with III-V native oxides. For that purpose we deposit Al{sub 2}O{sub 3} and TiO{sub 2}, using H{sub 2}O as the oxidizer, on GaAs(100) and InAs(100) native oxide surfaces. We find that there are distinct differences in the behavior of the two films. For the Al{sub 2}O{sub 3} ALD very little native oxide removal happens after the first few ALD cycles while the interaction of the alkyl amine precursor for TiO{sub 2} and the native oxides continues well after the surface has been covered with 2 nm of TiO{sub 2}. This difference is traced to the superior properties of Al{sub 2}O{sub 3} as a diffusion barrier. Differences are also found in the behavior of the arsenic oxides of the InAs and GaAs substrates. The arsenic oxides from the InAs surface are found to mix more efficiently in the growing dielectric film than those from the GaAs surface. This difference is attributed to

  13. Properties of InSbN grown on GaAs by radio frequency nitrogen plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lim, K P; Yoon, S F; Pham, H T

    2009-01-01

    We report the growth of InSbN on a lattice-mismatched GaAs substrate using radio frequency nitrogen plasma-assisted molecular beam epitaxy. The effects of a two-step thin InSb buffer layer grown at 330 and 380 deg. C and substrate temperature (270-380 deg. C) on the properties of the InSbN are studied. The crystalline quality of the InSbN is significantly improved by the two-step buffer layer due to defect suppression. The shifting in the absorption edge of the InSbN from ∼5 to 8 μm following an increase in the substrate temperature is correlated with the reduction in free carrier concentration from ∼10 18 to 10 16 cm -3 and increase in concentration of N substituting Sb from ∼0.2 to 1%. These results will be beneficial to those working on the pseudo-monolithic integration of InSbN detectors on a GaAs platform.

  14. Reflection high-energy electron diffraction oscillations during molecular beam epitaxial growth of ZnSe on (001)GaAs

    International Nuclear Information System (INIS)

    Yao, Takafumi; Taneda, Hirohito; Funaki, Mitsuyoshi

    1986-01-01

    Reflection high-energy electron diffraction (RHEED) intensity oscillations during molecular beam epitaxy (MBE) of II - VI compound of ZnSe are observed for the first time. The MBE growth was achieved on (001) GaAs substrate. After an 1-μm thick ZnSe buffer was grown, stable oscillations were observed at around the molecular beam flux ratio of Zn to Se of 1:3. One period of the oscillation corresponds to the growth rate of monomolecular layer. The observation of the oscillatory behaviors of RHEED is discussed in terms of surface morphology as is observed by RHEED. (author)

  15. Germinação de sementes de urucu em diferentes temperaturas e substratos Germination of annatto seeds under different temperatures and substrates

    Directory of Open Access Journals (Sweden)

    Renata Vianna Lima

    2007-08-01

    Full Text Available Objetivou-se, neste trabalho, analisar o comportamento germinativo das sementes de urucu cultivar Casca Verde, com e sem escarificação, sob regime de diferentes temperaturas e substratos. O trabalho foi realizado no Laboratório de Tecnologia e Análise de Sementes do Centro de Ciências Agrárias da Universidade Federal do Espírito Santo (CCA-UFES. O delineamento experimental utilizado foi o inteiramente casualizado, num esquema fatorial 2x6x4 (dois tratamentos físicos nas sementes, seis substratos e quatro temperaturas, totalizando 48 tratamentos, com quatro repetições de 50 sementes. Os tratamentos físicos foram: as sementes intactas e as sementes escarificadas; os substratos foram: a areia, a vermiculita, a fibra de coco, o pó de serra, o Plantmax e o rolo de papel Germitest ; e, as temperaturas testadas foram constantes de 20, 25 e 30ºC e alternada de 20-30ºC. Os dados foram submetidos à análise de variância e as médias comparadas pelo teste de Tukey. Os resultados obtidos evidenciaram maior porcentagem de germinação das sementes de urucu, semeadas nos substratos areia, vermiculita e rolo de papel; as temperaturas de 25, 30 e 20-30ºC foram mais adequadas para testes de germinação dessas sementes.This work was carried out with the objective to verify the effect of temperature and substrate on germinative capacity of annatto seeds. This study was developed in the Laboratories of Seed Analysis of Agrarian Science Center that belongs to the Universidade Federal do Espirito Santo (CCA-UFES, located in Alegre ES, Brazil. The experimental design was 2x6x4 factorial involving: (i two treatments in the seeds, (ii six substrates, and (iii four temperatures. Four replications were realized using 50 seeds at each experimental unit. Treatments refer to intact and scarified seeds. Substrates utilized were sand, vermiculite, coconut fiber, wood fiber, Plantmax and paper roll. Temperatures employed were 20, 25, 30 and 20-30ºC. Average

  16. Reflectance-difference spectroscopy as an optical probe for in situ determination of doping levels in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Lastras-Martinez, A.; Lara-Velazquez, I.; Balderas-Navarro, R.E.; Ortega-Gallegos, J.; Guel-Sandoval, S.; Lastras-Martinez, L.F. [Instituto de Investigacion en Comunicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi, SLP 78000 (Mexico)

    2008-07-01

    We report on in situ Reflectance Difference Spectroscopy measurements carried out on GaAs(001). Measurements were performed at temperatures of 580 C and 430 C, in both n and p-type doped films and for both (2 x 4) and c(4 x 4) reconstructions. Samples employed were grown by Molecular Beam Epitaxy with doping levels in the range from 10{sup 16}-10{sup 19} cm{sup -3}. We demonstrate the potential of Reflectance Difference Spectroscopy for impurity level determinations under growth conditions. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Atomic scale characterization of ion-induced amorphization of GaAs and InAs using PAC spectroscopy

    International Nuclear Information System (INIS)

    Dogra, R.; Byrne, A.P.; Ridgway, M.C.

    2005-01-01

    Single crystals of GaAs (100) and InAs (100) were implanted with 1-7 MeV 74 Ge ions over a wide dose range at liquid nitrogen temperature. The implanted substrates were investigated with respect to the damage production by means of perturbed angular correlation spectroscopy based upon hyperfine interactions of nuclear electromagnetic moments of probe nuclei with extra-nuclear fields. The perturbed angular correlation measurements were performed at room temperature utilizing the 111 In/Cd radioisotope probe nuclei. The crystalline, disordered and amorphous probe environments were identified from the measurements. The defect production is described within the framework of different amorphization models. (author). 6 refs., 2 figs

  18. Wavelength dependent laser-induced etching of Cr–O doped GaAs ...

    Indian Academy of Sciences (India)

    Administrator

    The laser induced etching of semi-insulating GaAs 〈100〉 is carried out to create porous structure ... Keywords. Laser-induced etching; intermediate state; nanostructure; SEM; AFM. 1. Introduction. Laser-induced etching, an improved etching process, is very ... into the properties and applications of GaAs, the surface.

  19. Crambe seed germination under the influence of temperature and substrateGerminação de sementes de crambe em diferentes temperaturas e substratos

    Directory of Open Access Journals (Sweden)

    Felipe Gustavo Pilau

    2012-10-01

    Full Text Available Crambe, native from Mediterranean zone, belonging to the Brassicaceae family, is a rustic crop that e merges as a productive alternative, with a potential for the production of feedstock for biodiesel, with emphasis on its oil quality. This study aimed to evaluate the effects of temperature and substrate on seed germination crambe, FMS Brilhante cultivar. The experimental design was completely randomized in a factorial 2 x 7 (temperature x substrate with 4 replicates of 25 seeds. The seeds were placed on substrates Germitest® paper and clay soil + sand and subjected to temperatures of 9°C, 12°C, 15°C, 20°C, 25°C, 30°C and 35°C. Seed germination percentage and germination speed index were evaluated. The temperature of 25°C is ideal for testing the seed germination of crambe. Temperatures below of 12°C and above of 30°C are detrimental to the germination process. The substrates germitest® paper and sand + clay soil are suitable for testing germination, since observed temperature of execution. The use of paper substrate at temperatures lower than 20°C underestimate the seed germination.Pertencente a família das Brassicaceae, nativo da zona Mediterrânea, o crambe é uma planta rústica que surge como mais uma alternativa produtiva, com potencial para a produção de matéria-prima para biodiesel, com destaque na qualidade de seu óleo. O trabalho teve por objetivo avaliar os efeitos de diferentes temperaturas e substratos na germinação de sementes de crambe, cultivar FMS Brilhante. O delineamento experimental foi o inteiramente casualizado no esquema fatorial 7 x 2 (temperaturas x substratos com 4 repetições de 25 sementes. As sementes foram colocadas em substratos papel Germitest® e solo argiloso + areia e submetidas ao teste de germinação sob temperaturas de 9°C, 12°C, 15°C, 20°C, 25°C, 30°C e 35°C. Foram avaliados a porcentagem e o índice de velocidade de germinação. A temperatura de 25°C é a ideal para a realiza

  20. PERFORMANCE ANALYSIS OF RECTANGULAR MPA USING DIFFERENT SUBSTRATE MATERIALS FOR WLAN APPLICATION

    Directory of Open Access Journals (Sweden)

    E Aravindraj

    2017-03-01

    Full Text Available In this paper, a rectangular microstrip patch antenna (MPA is designed using different substrate materials for analyzing the performance of the MPA. Alumina (Al2O3, Bakelite, Beryllium oxide (BeO, Gallium Arsenide (GaAs, RT-Duroid and Flame Retardant 4 (FR-4 are the six different substrate used in the design. The size of the rectangular microstrip patch antenna varies according to the dielectric constant of substrate materials used. The operating frequency taken for this analysis is 5.8 GHz. The proposed design provides the study on the performance of rectangular microstrip patch antenna for different substrate materials using the same frequency. This study conveys that which substrate material provides better performance. Moreover, this comparative study conveys that which substrate material provides better performance. The simulation parameters are investigated using HFSS.

  1. Amateurism in an Age of Professionalism: An Empirical Examination of an Irish Sporting Culture: The GAA

    Directory of Open Access Journals (Sweden)

    Ian Keeler

    2013-07-01

    This research study recommends that the GAA adopt an innovative approach, through strategic decision-making, to allow the GAA to maintain its amateur ethos, and, yet, successfully compete in the professional sporting market. The strong links with the community must be both nurtured and enhanced. The GAA and Gaelic games must embrace the challenges that the branding success of foreign sports has brought. Player welfare issues for the elite players must be addressed while continuing to protect the club and its amateur structures. The study looks at the key metrics that are required to evolve the GAA. This entails not only focusing on the perceived importance of the amateur ethos to the GAA, but also developing the marketing, branding and profiling of Gaelic games to enhance the performance of an amateur sporting organization in an era of increased professionalism in sport.

  2. Understanding and Curing Structural Defects in Colloidal GaAs Nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Vishwas [Department of Chemistry; Liu, Wenyong [Department of Chemistry; Janke, Eric M. [Department of Chemistry; Kamysbayev, Vladislav [Department of Chemistry; Filatov, Alexander S. [Department of Chemistry; Sun, Cheng-Jun [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States; Lee, Byeongdu [Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States; Rajh, Tijana [Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States; Schaller, Richard D. [Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States; Department of; Talapin, Dmitri V. [Department of Chemistry; Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States

    2017-02-22

    Nearly three decades since the first report on the synthesis of colloidal GaAs nanocrystals (NCs), the preparation and properties of this material remain highly controversial. Traditional synthetic routes either fail to produce the GaAs phase or result in materials that do not show expected optical properties such as excitonic transitions. In this work, we demonstrate a variety of synthetic routes toward crystalline GaAs NCs. By using a combination of Raman, EXAFS and transient absorption spectroscopies, we conclude that unusual optical properties of 2 colloidal GaAs NCs can be related to the presence of vacancies and lattice disorder. We introduce novel molten salt based annealing approach to alleviate these structural defects and show the emergence of size-dependent excitonic transitions in colloidal GaAs quantum dots.

  3. Study of defects in GaAs and Zn Te semiconductors by electron paramagnetic resonance and by optically detected magnetic resonance

    International Nuclear Information System (INIS)

    Bittebierre, J.

    1987-04-01

    Electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR) studied the compensation processes that produce a semi-insulating state for the semiconductors GaAs and ZnTe under certain crystal growth conditions. The LEC-pBN gallium arsenide crystals studied are grown for use as semi-insulating substrates. EPR identifies the antisite As Ga + as being the principal defect responsible for compensating the majority acceptor impurity C As - . The defect EL2 is identified as being an isolated As Ga antisite and, in carbon rich crystals, pairs associating As Ga + and C As - are formed. This introduces levels in the bandgap between EL2 and E c , which explains the paradoxically high position of the Fermi level in carbon rich samples. New centres appear in infrared irradiation. Three of these centres, at least one of which has its ESR transitions induced by the electric field, are identified as acceptors. Their study provided an understanding of the complex phenomena that occur during infrared irradiation at 1.2 eV and provide proof that the metastable state of EL2 lies in the valence band. ODMR identifies two low symmetry acceptors in ZnTe, which are zinc vacancy - donor impurity pairs (V Zn - D) having unquenched orbital momentum and intermediate depth. They contrast with the deep, strongly pseudo-Jahn-Teller distorted configurations observed for the same kind of V Zn - D pairs in ZnS and ZnSe. The difficulty of obtaining n-type ZnTe is explained by the formation of these complex acceptors [fr

  4. Magnetophotoluminescence in high purity MOVPE GaAs

    Science.gov (United States)

    Zemon, S. A.; Norris, P. E.; Lambert, G.

    1986-09-01

    Magnetophotoluminescence (MPL) is shown to be useful for the identification of trace acceptor impurities in MOVPE GaAs. Using MPL a trace concentration of zinc acceptors was detected in a sample where the zinc transitions were obscured in zero magnetic field. Acceptor MPL was observed to be insensitive to V/III ratio for values between 17.3 and 54.4. Conduction-band-to-acceptor MPL spectral widths as small as 0.3 meV were found. Resolved Landau level transitions and the magnetic splitting of conduction-band-to-acceptor transitions were observed.

  5. Spin noise spectroscopy on donors in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bernien, Hannes; Mueller, Georg; Roemer, Michael; Huebner, Jens; Oestreich, Michael [Institute for Solid State Physics, Gottfried Wilhelm Leibniz University Hannover (Germany)

    2009-07-01

    In recent experiments spin noise spectroscopy (SNS) has proven to be a very sensitive technique to study electron spin dynamics in semiconductors at thermal equilibrium. Here we present SNS-measurements on donor bound electrons in very low doped bulk GaAs. In this environment the donors do not interact with each other and form artificial atoms. We discuss the detection of single donor bound electron spins, which should have extremely long spin relaxation times compared to ensemble spin relaxation times. In further experiments the electron bound to the donor will be used to probe and study the local nuclear magnetic field at the donor site.

  6. GaAs vapor-grown bipolar transistors.

    Science.gov (United States)

    Nuese, C. J.; Gannon, J. J.; Dean, R. H.; Gossenberger, H. F.; Enstrom, R. E.

    1972-01-01

    Discussion of an approach for the fabrication of high-temperature GaAs transistors which is centered on the preparation of n-p-n three-layered structures entirely by a vapor-phase growth technique, as described by Tietjen and Amick (1966). The low growth temperature of approximately 750 C is thought to reduce contamination during crystal growth and to contribute to the reasonably high minority-carrier lifetimes obtained for the vapor-grown p-n junctions. The fact that impurity concentrations and layer thicknesses can be precisely controlled for epitaxial layers as thin as 1 micrometer is an important feature of this growth technique.

  7. Study of irradiation defects in GaAs

    International Nuclear Information System (INIS)

    Loualiche, S.

    1982-11-01

    Characterization techniques: C(V) differential capacity, DLTS deep level transient spectroscopy, DDLTS double deep level transient spectroscopy and DLOS deep level optical spectroscopy are studied and theoretical and experimental fundamentals are re-examined. In particular the centres created by ionic or electronic bombardment of p-type GaAs. New quantitative theoretical bases for the C(V) method are obtained. Study of the optical properties of traps due to irradiation using DLOS. The nature of irradiation defects are discussed [fr

  8. Simple intrinsic defects in GaAs : numerical supplement.

    Energy Technology Data Exchange (ETDEWEB)

    Schultz, Peter Andrew

    2012-04-01

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  9. Laser-induced bandgap collapse in GaAs

    Science.gov (United States)

    Siegal, Y.; Glezer, Eli N.; Huang, Li; Mazur, Eric

    1994-05-01

    We present recent time-resolved measurements of the linear dielectric constant of GaAs at 2.2 eV and 4.4 eV following femtosecond laser pulse excitation. In sharp contrast to predictions based on the widely used Drude model, the data show an interband absorption peak coming into resonance first with the 4.4 eV probe photon energy and then with the 2.2 eV probe photon energy, indicating major changes in the band structure. The time scale for these changes ranges from within 100 fs to a few picoseconds, depending on the incident pump pulse fluence.

  10. Advanced On-Board Signal Procesor GaAs Memory.

    Science.gov (United States)

    1983-11-01

    forgetting voltage was VW =2.4-2.5 V. One important parameter Influencing memory cycle times is the minimum pulse width that can write or change the...MRDC41083-29FTR-7 Copy No. 25 0 4 ADVANCED ON-BOARD SIGNAL k) PROCESSOR GaAs MEMORY , FINAL TECHNICAL REPORT FOR THE PERIOD January 21, 1981 through...on the design and fabrication of a 256 bit static memory chip. The development of operational 256 bit memory arrays has been used on three mask sets

  11. Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field

    Science.gov (United States)

    Manca, M.; Wang, G.; Kuroda, T.; Shree, S.; Balocchi, A.; Renucci, P.; Marie, X.; Durnev, M. V.; Glazov, M. M.; Sakoda, K.; Mano, T.; Amand, T.; Urbaszek, B.

    2018-04-01

    In III-V semiconductor nano-structures, the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics are widely studied, but little is known about the initialization mechanisms. Here, we investigate optical pumping of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X+ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage Vg. Variation of ΔVg on the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 μeV (-22%) to +10 μeV (+7%) although the X+ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X+ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X+ lifetime which is on the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.

  12. Magnetic properties of epitaxial MnAs thin films on GaAs (001)

    CERN Document Server

    Park, Y S

    2000-01-01

    The magnetic properties of two types of epitaxial MnAs films on GaAs (001) substrates in the thickness range of 20 approx 200 nm were studied. Using longitudinal a magneto-optical Kerr-effect(MOKE) apparatus at lambda=632.8 nm, we determined the Curie temperatures of the 100-nm thick films to be 54.0+-0.5 .deg. C and 63.7+-0.5 .deg. C for type A films and type B films, respectively. The observed Curie temperatures corresponded to increases of 36.8 .deg. C and 33.9 .deg. C per one percent increase in the unit cell volume for type A and B, respectively. The normalized maximum MOKE signal from the type A film exhibited a first-order-like magnetic transition while that of type B underwent a second-order-like transition. These different behaviors between types A and B stem from different residual stresses being exerted on the hexagonal phase. Utilizing a Foner-type vibrating sample magnetometer at room temperature, we examined the thickness dependence of the coercive force and the saturation magnetization of the f...

  13. Investigation of the radiation damage of GaAs detectors by protons, pions and neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Luebelsmeyer, K. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Arbabi, S. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Braunschweig, W. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Chu, Z. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Krais, R. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Kubicki, T. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Rente, C. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Syben, O. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Tenbusch, F. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Toporowski, M. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Wittmer, B. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.; Xiao, W.J. [Technische Hochschule Aachen (Germany). 1. Physikalisches Inst.

    1997-05-01

    Surface barrier detectors processed in Aachen using semi-insulating (SI) GaAs from several manufacturers have been irradiated with high fluences of neutrons (mean energy 1 MeV, fluence up to {Phi}{sub n} {proportional_to} 5 x 10{sup 14} cm{sup -2}), pions (191 MeV, fluence up to {Phi}{sub {pi}} {proportional_to} 0.6 x 10{sup 14} cm{sup -2}) and protons (23 GeV, fluence up to {Phi}{sub p} {proportional_to} 2 x 10{sup 14} cm{sup -2}). The detectors have been characterized in terms of macroscopic quantities like I-V characteristic curves and charge collection efficiencies for incident minimum ionizing- (mip) as well as {alpha}-particles. All detectors work well after the exposure. At the highest fluences a sizable degradation in the charge collection efficiencies has been observed for all investigated materials. SI-GaAs material with low carbon (LC) content seems to be less affected than substrates with a higher carbon concentration. At the highest irradiation level the mip signal from a 250 {mu}m thick detector made of LC material amounts to 8000 electrons (at 400 V bias voltage) independent of peaking times between 40 ns and 2.2 {mu}s. The leakage currents for this material are even reduced after the irradiation. (orig.).

  14. Development of clonal matrices of australian red cedar in different substrates under fertilizer doses Desenvolvimento de matrizes clonais de cedro Australiano em diferentes substratos sob doses de fertilizantes

    Directory of Open Access Journals (Sweden)

    Bruno Peres Benatti

    2012-06-01

    Full Text Available In order to evaluate fertilizers doses in different substrates for growth and development of clonal matrices of Australian Red Cedar [Toona ciliata var. australis (F. Muell. Bahadur], an experiment was conducted in a greenhouse. Five substrates were evaluate, with proportions by volume, the first consisting of 100% of Multiplant florestal®, the second of 50% vermiculite, 20% carbonized rice hulls, 20% soil and 10% coconut fiber, the third with 50% soil and 50% sand, the fourth was composed by 50% Multiplant florestal®, 10% soil and 40% coconut fiber and the fifth with 65% of Multiplant florestal®, 25% vermiculite and 10% carbonized rice hulls. The fertilizers doses applied were 0.0; 0.3; 0.6; 1.2; 2.4 of fertilization suggested by Malavolta (1980 for vases. The characteristics evaluated were: collar diameter of the matrices, production of dry mater by shoots, root system and total and accumulation of nutrients by shoot at the end of the experimental period of 150 days. The Australian Red Cedar plants have high nutritional requirements, as showed by the better development obtained with higher fertilizer doses than those suggested by Malavolta (1980. The substrate three provided the worst development to clonal matrices while the substrates 1, 4 and 5 provided the best environment for the development considering all the fertilizer doses and all variables.Com o objetivo de avaliar diferentes substratos com taxas de fertilizantes para o crescimento e desenvolvimento de matrizes clonais de cedro australiano [Toona ciliata var. australis (F. Muell. Bahadur], foi realizado um experimento em casa de vegetação. Foram avaliados cinco substratos, com as proporções em volume, sendo o primeiro composto por 100% Multiplant florestal®, o segundo de 50% Vermiculita, 20% casca de arroz carbonizada, 20% terra e 10% fibra de coco, o terceiro com 50% terra e 50% areia, o quarto com proporção de 50% Multiplant florestal®, 10% terra e 40% de fibra de coco e

  15. Simulation of green roof runoff under different substrate depths and vegetation covers by coupling a simple conceptual and a physically based hydrological model.

    Science.gov (United States)

    Soulis, Konstantinos X; Valiantzas, John D; Ntoulas, Nikolaos; Kargas, George; Nektarios, Panayiotis A

    2017-09-15

    In spite of the well-known green roof benefits, their widespread adoption in the management practices of urban drainage systems requires the use of adequate analytical and modelling tools. In the current study, green roof runoff modeling was accomplished by developing, testing, and jointly using a simple conceptual model and a physically based numerical simulation model utilizing HYDRUS-1D software. The use of such an approach combines the advantages of the conceptual model, namely simplicity, low computational requirements, and ability to be easily integrated in decision support tools with the capacity of the physically based simulation model to be easily transferred in conditions and locations other than those used for calibrating and validating it. The proposed approach was evaluated with an experimental dataset that included various green roof covers (either succulent plants - Sedum sediforme, or xerophytic plants - Origanum onites, or bare substrate without any vegetation) and two substrate depths (either 8 cm or 16 cm). Both the physically based and the conceptual models matched very closely the observed hydrographs. In general, the conceptual model performed better than the physically based simulation model but the overall performance of both models was sufficient in most cases as it is revealed by the Nash-Sutcliffe Efficiency index which was generally greater than 0.70. Finally, it was showcased how a physically based and a simple conceptual model can be jointly used to allow the use of the simple conceptual model for a wider set of conditions than the available experimental data and in order to support green roof design. Copyright © 2017 Elsevier Ltd. All rights reserved.

  16. AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates

    DEFF Research Database (Denmark)

    Cirlin, G E; Reznik, R R; Shtrom, I V

    2017-01-01

    The data on growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on different (1 1 1) substrates by Au-assisted molecular beam epitaxy are presented. The influence of nanowires growth conditions on structural and optical properties is studied in detail...

  17. Evidence for Substrate Influence on Artificial Substrate Invertebrate Communities.

    Science.gov (United States)

    Phillips, Iain D; Prestie, Kate S

    2017-08-01

    Cobble baskets are frequently used as a tool to measure differences in benthic macroinvertebrate communities between waterbodies; however, underlying differences in substrate type may influence the resultant colonization of baskets, misrepresenting communities. This study tests the hypothesis that cobble basket placement influences the resulting benthic macroinvertebrate community. Cobble basket arrays (n = 4) were deployed in Dog Lake, Saskatchewan, in 2011 (97 d) and 2012 (95 d) on cobble habitats and soft or sandy substrates ∼100 m apart. Baskets placed on cobble substrate had significantly higher Shannon-Weaver diversity relative to those placed on soft substrate in both years, and higher % EPT (Ephemeroptera Plecoptera Trichoptera) in 2011, but total density was not significantly different. Nonmetric multidimensional scaling revealed that the community was different between both treatments, characterized by higher densities of Gammarus lacustris Sars in baskets placed on soft sediment in both years, higher densities of Aeshna sp. and Mystacides sp. on cobble substrate in 2011, and higher densities of Helobdella stagnalis (L.) and Glossophinia complanata (L.) on cobble substrate in 2012. The results were consistent with the hypothesis that baskets placed on cobble substrate versus soft substrate will result in differing community colonization. The resulting recommendation for monitoring and assessment using cobble baskets in lakes is that baskets be placed on comparable substrate type when comparing between lakes, and that cobble beds be chosen as a more appropriate substrate for deployment, as the added habitat complexity of baskets on soft sediment may act as an attractant and not reflect the true community composition of that habitat. © The Authors 2017. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  18. A photoemission study of Mn grown on GaAs(100)

    International Nuclear Information System (INIS)

    James, D.; Riley, J.; Leckey, R.; Usher, B.; Sieber, N.; Seyller, Th.; Ley, L.

    2002-01-01

    Full text: Metal contacts on semiconductors have been an important area for device manufacture. The possibility of lattice matched growth of magnetic metals on semiconductors was once thought to be a unobtainable goal. More recently it has been found that transition metals can react with the semiconductor substrates, forming another lattice with a more comparable lattice constant, from which epitaxial growth can then proceed. Al grows epitaxially on GaN even with a lattice mismatch greater than 10%. In this instance, Al displaces Ga being driven by a larger heat of formation to produce an AlN buffer layer, on which Al can then grow. This paper investigates the room temperature deposition of Mn onto GaAs(100) at room temperature. The Photoemission study was carried out at the UEL56/2 PGM2 beam line at BESSY II in Berlin, Germany. Synchrotron radiation was used to observe the surface as thin layers of Mn were deposited. The interaction of manganese with the substrate tends to donate electron density to neighbouring atoms, decreasing binding energy. No further segregation of substitutional or interstitial Mn and Ga can be seen from angle dependence data at this temperature, with metallic manganese eventually attenuating the bulk Ga signal to the point where it is indistinguishable from the background. It is concluded that there the metal reacts with the semiconductor surface with some indiffusion as confirmed using SIMS. Previously, the reaction was only thought to have taken place above room temperature. The resulting structure consists of a Ga-As-Mn buffer layer as with the higher temperature depositions

  19. Power electronics substrate for direct substrate cooling

    Science.gov (United States)

    Le, Khiet [Mission Viejo, CA; Ward, Terence G [Redondo Beach, CA; Mann, Brooks S [Redondo Beach, CA; Yankoski, Edward P [Corona, CA; Smith, Gregory S [Woodland Hills, CA

    2012-05-01

    Systems and apparatus are provided for power electronics substrates adapted for direct substrate cooling. A power electronics substrate comprises a first surface configured to have electrical circuitry disposed thereon, a second surface, and a plurality of physical features on the second surface. The physical features are configured to promote a turbulent boundary layer in a coolant impinged upon the second surface.

  20. SQUID-magnetometry on Fe monolayers on GaAs(001) in UHV

    Energy Technology Data Exchange (ETDEWEB)

    Kebe, T.

    2006-12-11

    This thesis deals with the characterization of the growth and of the magnetic properties of ultrathin Fe films on GaAs(001). In particular, a scanning SQUID (superconducting quantum interference device) magnetometer was used in ultrahigh vacuum (UHV), whose performance has been improved within the scope of this thesis. By probing the magnetic stray field of a magnetized film, the absolute remanent magnetization can be determined with submonolayer sensitivity. In the context of this thesis the magnetic stray field has been calculated analytically. The combined use of SQUID and ferromagnetic resonance (FMR) on the same film in UHV allows for the independent determination of the magnetization and the magnetic anisotropy constants as a function of temperature, film thickness, topography of the substrate and oxygen exposure. The results of this thesis are: 1. The thickness dependent remanent magnetization from 2 to 20 monolayer (ML) Fe on GaAs(001) without cap layer was measured as a function of temperature. 2. The continuous in-plane reorientation of the magnetization (from [1 1 0] to [1 0 0]) of Fe films with increasing film thickness was observed using the scanning SQUID technique and showed good agreement with FMR measurements. 3. The influence of controlled oxygen exposure on the remanent magnetization and the magnetic anisotropy constants of 5 to 16 ML Fe was investigated. A faster reduction of the magnetization is found for the thinner Fe films when the volume of the Fe oxide is taken into consideration. At low oxygen exposure (<10 Langmuir), the perpendicular uniaxial anisotropy constant K{sub 2} {sub perpendicular} {sub to} is reduced by about 40% whereas other anisotropy contributions remain virtually unchanged. In addition, structural investigations using IV-LEED during the oxygen exposure were carried out. 4. An 8.6 ML Fe/GaAs(001) film which was exposed to 25000 L O{sub 2} exhibits a spontaneous magnetization perpendicular to the film plane at low

  1. Formation, atomic structure, and electronic properties of GaSb quantum dots in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Timm, R.

    2007-12-14

    In this work, cross-sectional scanning tunneling microscopy and spectroscopy are used for the first time to study the shape, size, strain, chemical composition, and electronic properties of capped GaSb/GaAs QDs at the atomic scale. By evaluating such structural results on a variety of nanostructures built using different epitaxy methods and growth conditions, details on the underlying QD formation processes can be revealed. A cross-over from flat quantum wells (QWs) to optically active QDs can be observed in samples grown by metalorganic chemical vapor deposition (MOCVD) with increasing amount of GaSb, including self-assembled Sb accumulations within a still two-dimensional layer and tiny three-dimensional GaSb islands probably acting as precursor structures. The QWs consist of significantly intermixed material with stoichiometries of maximally 50% GaSb, additionally exhibiting small gaps filled with GaAs. A higher GaSb content up to nearly pure material is found in the QDs, being characterized by small sizes of up to 8 nm baselength and about 2 nm height. In spite of the intermixing, all nanostructures have rather abrupt interfaces, and no significant Sb segregation in growth direction is observed. This changes completely when molecular beam epitaxy (MBE) is used as growth method, in which case individual Sb atoms are found to be distributed over several nm above the nanostructures. Massive group-V atomic exchange processes are causing this strong inter-mixing and Sb segregation during GaAs overgrowth. In combination with the large strain inherent to GaSb/GaAs QDs, this segregation upon overgrowth is assumed to be the reason for a unique structural phenomenon: All MBE-grown QDs, independent of the amount of deposited GaSb, exhibit a ring structure, consisting of a ring body of high GaSb content and a more or less extended central gap filled with GaAs. These rings have formed in a self-assembled way even when the initial GaSb layer was overgrown considerably fast

  2. X-ray imaging bilinear staggered GaAs detectors

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A.; Dvoryankin, V.F. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G.; Dikaev, Y.M.Yu.M.; Krikunov, A.I.; Kudryashov, A.A.; Panova, T.M.; Petrov, A.G.; Telegin, A.A

    2004-09-21

    The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise arising due to leakage currents. The sensitivity range of the epitaxial GaAs photovoltaic X-ray detector covers the effective energies from 8 to 120 keV. A maximum response of the detector operating in the short-circuit mode was observed at an energy of 35 keV and amounted to 30 {mu}A min/(Gy cm{sup 2}). The multichannel detector was made of 1024 pixels with pitch of 0.8 mm. The spatial resolution of double staggered sensor row is twice as high as the resolution of that of single sensor row with the same pitch. Measured spatial resolution is 1.2 line-pairs/mm, contrast sensitivity not worse 1% and dynamic range defined as the ratio of maximum detectable X-ray signal to electronic noise level more than 2000 are received.

  3. X-ray imaging bilinear staggered GaAs detectors

    International Nuclear Information System (INIS)

    Achmadullin, R.A.; Dvoryankin, V.F.; Dvoryankina, G.G.; Dikaev, Y.M.Yu.M.; Krikunov, A.I.; Kudryashov, A.A.; Panova, T.M.; Petrov, A.G.; Telegin, A.A.

    2004-01-01

    The multichannel bilinear X-ray detector based on epitaxial GaAs structures is developed to obtain a digital X-ray image. Each detector operates in photovoltaic mode without reverse bias that enables almost complete elimination of detector noise arising due to leakage currents. The sensitivity range of the epitaxial GaAs photovoltaic X-ray detector covers the effective energies from 8 to 120 keV. A maximum response of the detector operating in the short-circuit mode was observed at an energy of 35 keV and amounted to 30 μA min/(Gy cm 2 ). The multichannel detector was made of 1024 pixels with pitch of 0.8 mm. The spatial resolution of double staggered sensor row is twice as high as the resolution of that of single sensor row with the same pitch. Measured spatial resolution is 1.2 line-pairs/mm, contrast sensitivity not worse 1% and dynamic range defined as the ratio of maximum detectable X-ray signal to electronic noise level more than 2000 are received

  4. Low-energy particle treatment of GaAs surface

    International Nuclear Information System (INIS)

    Pincik, E.; Ivanco, J.; Brunner, R.; Jergel, M.; Falcony, C.; Ortega, L.; Kucera, J. M.

    2002-01-01

    The paper presents results of a complex study of surface properties of high-doped (2x10 18 cm -3 ) and semi-insulating GaAs after an interaction with the particles coming from low-energy ion sources such as RF plasma and ion beams. The virgin samples were mechano-chemically polished liquid-encapsulated Czochralski-grown GaAs (100) oriented wafers. The crystals were mounted on the grounded electrode (holder). The mixture Ar+H 2 as well as O 2 and CF 4 were used as working gases: In addition, a combination of two different in-situ exposures was applied, such as e.g. hydrogen and oxygen. Structural, electrical and optical properties of the exposed surfaces were investigated using X-ray diffraction at grazing incidence, quasi-static and high-frequency C-V curve measurements, deep-level transient spectroscopy, photo-reflectance, and photoluminescence. Plasma and ion beam exposures were performed in a commercial RF capacitively coupled plasma equipment SECON XPL-200P and a commercial LPAI device, respectively. The evolution of surface properties as a function of the pressure of working gas and the duration of exposure was observed. (Authors)

  5. Arbuscular mycorrhizal fungi altered the hypericin, pseudohypericin, and hyperforin content in flowers of Hypericum perforatum grown under contrasting P availability in a highly organic substrate.

    Science.gov (United States)

    Lazzara, Silvia; Militello, Marcello; Carrubba, Alessandra; Napoli, Edoardo; Saia, Sergio

    2017-05-01

    St. John's Wort (Hypericum perforatum) is a perennial herb able to produce water-soluble active ingredients (a.i.), mostly in flowers, with a wide range of medicinal and biotechnological uses. However, information about the ability of arbuscular mycorrhizal fungi (AMF) to affect its biomass accumulation, flower production, and concentration of a.i. under contrasting nutrient availability is still scarce. In the present experiment, we evaluated the role of AMF on growth, flower production, and concentration of bioactive secondary metabolites (hypericin, pseudohypericin, and hyperforin) of H. perforatum under contrasting P availability. AMF stimulated the production of aboveground biomass under low P conditions and increased the production of root biomass. AMF almost halved the number of flowers per plant by means of a reduction of the number of flower-bearing stems per plant under high P availability and through a lower number of flowers per stem in the low-P treatment. Flower hyperforin concentration was 17.5% lower in mycorrhizal than in non-mycorrhizal plants. On the contrary, pseudohypericin and hypericin concentrations increased by 166.8 and 279.2%, respectively, with AMF under low P availability, whereas no effect of AMF was found under high P availability. These results have implications for modulating the secondary metabolite production of H. perforatum. However, further studies are needed to evaluate the competition for photosynthates between AMF and flowers at different nutrient availabilities for both plant and AM fungus.

  6. Critical Analysis of Mottling and its Impact on Various Grades of Paper Substrates Printed under Conventional Sheet Fed Offset, Dry Toner & Liquid Toner Based Digital Print Engines

    Directory of Open Access Journals (Sweden)

    Rajendrakumar Anayath

    2016-03-01

    Full Text Available Mottle is one of the print quality factors which highly affect the final print in any printing system. Print mottle is without doubt one of the most important factors regarding visual impression of print quality in any printing system. It is usually the result of uneven ink layer or non-uniform ink absorption across the paper surface and it is more prominently visible in middle tone images or areas of uniform colour such as solids and continuous tone screen images. A mottled picture highly makes the picture smudgy and in most of the cases is not acceptable to the end user. It is required to print photographs with high sharpness and consistently from the very first print to the last print. Mottle pictures can also be observed visually and hence it needs utmost care and attention for enhancing the final print quality. Various types of mottles are generally resulted from the surface characteristics of the substrate, the setting and operation of the printing machines, and the behavior & characteristics of the printing ink.

  7. Post-growth annealing of zinc oxide thin films pulsed laser deposited under enhanced oxygen pressure on quartz and silicon substrates

    International Nuclear Information System (INIS)

    Rusop, M.; Uma, K.; Soga, T.; Jimbo, T.

    2006-01-01

    Zinc oxide (ZnO) thin films have been prepared by pulsed laser deposition (PLD) technique at room temperature on quartz and single crystal silicon (1 0 0) substrates. The oxygen ambient gas pressure was attained at 6 Torr during the deposition. The deposited films were post-growth annealed in air at various annealing temperatures for 30 min. The X-ray diffraction (XRD), optical and electrical properties have been measured to study the properties of the films as a function of annealing temperatures. XRD has shown the strength of (0 0 2) peak increases and FWHM value decreases as the annealing temperatures increases from 200 to 600 deg. C. The post-growth annealed at 600 deg. C show dominant c-axis oriented hexagonal wurtize crystal structure and exhibit high average transmittance about 85% in the visible region and very sharp absorption edge at 376 nm with energy band gap of approximately 3.46 eV. Electrical measurement indicates the resistivity decreases with the annealing temperatures up to 600 deg. C, after which it increases with higher annealing temperatures at 800 deg. C. The complex of oxygen vacancy in the ZnO films may be the source of low conductivity in undoped ZnO films

  8. Magnetic domain-wall motion study under an electric field in a Finemet{sup ®} thin film on flexible substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lan, Ngo Thi [Laboratoire des Sciences des Procédés et des Matériaux, CNRS-Université Paris XIII, 93430 Villetaneuse (France); Mercone, Silvana, E-mail: silvana.mercone@univ-paris13.fr [Laboratoire des Sciences des Procédés et des Matériaux, CNRS-Université Paris XIII, 93430 Villetaneuse (France); Moulin, Johan [Institut d' Electronique Fondamentale, UMR 8622 Université Paris Sud/CNRS, Orsay (France); Bahoui, Anouar El; Faurie, Damien; Zighem, Fatih; Belmeguenai, Mohamed; Haddadi, Halim [Laboratoire des Sciences des Procédés et des Matériaux, CNRS-Université Paris XIII, 93430 Villetaneuse (France)

    2015-01-01

    We study the influence of applied in-plane elastic strains on the static magnetic configuration of a 530 nm magnetostrictive FeCuNbSiB (Finemet{sup ®}) thin film. The in-plane strains are induced via the application of a voltage to a piezoelectric actuator on which the film/substrate system was glued. A quantitative characterization of the voltage dependence of the induced-strain at the surface of the film was performed using a digital image correlation technique. Magnetic Force Microscopy (MFM) images at remanence (H=0 Oe and U=0 V) clearly reveal the presence of weak stripe domains. The effect of the voltage-induced strain shows the existence of a voltage threshold value for the strike configuration break. For a maximum strain of ε{sub XX}∼0.5×10{sup −3} we succeed in destabilizing the stripes configuration helping the setting up of a complete homogeneous magnetic pattern. - Highlights: • Elastic strain effect on the magnetic domain structure of a Finemet/Kapton is investigated. • External loading is applied thanks to a piezo-actuator on which the sample is glued. • The amount of strains was measured by the Digital Image Correlation technique. • Magnetic Force Microscopy showed high mobility of magnetic stripes domains. • Bending, curving and branching of domains go into maze-like pattern.

  9. Influence of Substrate Material on Radiation Characteristics of THz Photoconductive Emitters

    Directory of Open Access Journals (Sweden)

    Jens Klier

    2015-01-01

    Full Text Available We present in this paper spectral and spatial characteristics of terahertz emission from standard dipole antenna structures used as emitters depending on the substrate material. All antenna structures were lithographically fabricated on low-temperature (LT grown, few-micrometers-thick gallium arsenide (GaAs layers. To investigate the effect of the substrate material on the radiation pattern of terahertz beams, either semi-insulating gallium arsenide or high-resistivity silicon substrate wafers have been used. As detector a standard 40 µm long dipole antenna on a semi-insulating GaAs substrate with a low-temperature grown gallium arsenide layer on it has been employed; this configuration allows for broadband detection and is still efficient enough for the characterization purpose. Strong dependence of the radiation pattern on the substrate used for the terahertz source is demonstrated. The measured patterns and differences between the two cases of substrates are well explained by means of classical diffraction.

  10. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Xin; Zhang, Xia, E-mail: xzhang@bupt.edu.cn; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China)

    2014-12-07

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots.

  11. Controllable growth and optical properties of InP and InP/InAs nanostructures on the sidewalls of GaAs nanowires

    International Nuclear Information System (INIS)

    Yan, Xin; Zhang, Xia; Li, Junshuai; Cui, Jiangong; Ren, Xiaomin

    2014-01-01

    The growth and optical properties of InP and InP/InAs nanostructures on GaAs nanowires are investigated. InP quantum well and quantum dots (QDs) are formed on the sidewalls of GaAs nanowires successively with increasing the deposition time of InP. The GaAs/InP nanowire heterostructure exhibits a type-II band alignment. The wavelength of the InP quantum well is in the range of 857–892 nm at 77 K, which means that the quantum well is nearly fully strained. The InP quantum dot, which has a bow-shaped cross section, exhibits dislocation-free pure zinc blende structure. Stranski-Krastanow InAs quantum dots are subsequently formed on the GaAs/InP nanowire core-shell structure. The InAs quantum dots are distributed over the middle part of the nanowire, indicating that the In atoms contributing to the quantum dots mainly come from the vapor rather than the substrate. The longest emission wavelength obtained from the InAs QDs is 1039 nm at 77 K. The linewidth is as narrow as 46.3 meV, which is much narrower than those on planar InP substrates and wurtzite InP nanowires, suggesting high-crystal-quality, phase-purity, and size-uniformity of quantum dots

  12. Comparative study of GaN and GaAs photocathodes

    Science.gov (United States)

    Qiao, Jianliang; Chang, Benkang; Yang, Zhi; Tian, Si; Gao, Youtang

    2008-02-01

    Taking GaAs and GaN as representation, negative electron affinity (NEA) photocathode has many virtues, such as high quantum efficiency, low dark current, concentrated electrons energy distribution and angle distribution, adjustive long-wave threshold, great potential to extend the long-wave spectral response waveband. Therefore it plays more and more important effect in high performance image intensifiers and polarized electron sources. GaN NEA photocathode and GaAs NEA photocathode are very similar because they all belong to III-V compound. But, GaN photocathode and GaAs photocathode have many difference in such aspects as preparation process, activation manners, stability and application field etc. In this paper, using the multi-information measurement and evaluation system of photocathode, the preparation processes of native reflection-mode GaN photocathode and GaAs photocathode are studied. The different activation manners of GaN photocathode and GaAs photocathode are compared and analyzed. The spectral response and stability of the two kind of photocathode are compared also. The experiments indicate: the atomically clean degree of NEA photocathode surface and the structure of activation layer are the main factors that influence photocathode sensitivity and stability after activation. GaN photocathode and GaAs photocathode have good NEA property and large quantum yield. Compare with GaAs photocathode, GaN photocathode has high stability, and the decay of the quantum yield is comparatively slow.

  13. Terahertz radiation on the base of accelerated charge carriers in GaAs; Terahertz-Strahlung auf der Basis beschleunigter Ladungstraeger in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Dreyhaupt, Andre

    2008-07-01

    Electromagnetic radiation in the frequency range between about 100 GHz and 5 THz can be used for spectroscopy and microscopy, but it is also promising for security screening and even wireless communication. In the present thesis a planar photoconducting large-area THz radiation source is presented. The device exhibits outstanding properties, in particular high THz field strength and generation efficiency and large spectral bandwidth with short THz pulse length. The THz emission is based on acceleration and deceleration of photoexcited carriers in semiconductor substrates. A metallic interdigitated structure at the surface of semi-insulating GaAs provides the electrodes of an Auston switch. In a biased structure photoexcited charge carriers are accelerated. Hence electromagnetic waves are emitted. An appropriately structured second metallization, electrically isolated from the electrodes, prevents destructive interference of the emitted waves. The structure investigated here combines several advantages of different conventional photoconducting THz sources. First, it provides high electric acceleration fields at moderate voltages owing to the small electrode separation. Second, the large active area in the mm2 range allows excitation by large optical powers of some mW. Optical excitation with near-infrared femtosecond lasers is possible with repetition rates in the GHz range. The presented results point out the excellent characteristics regarding the emitted THz field strength, average power, spectral properties, and easy handling of the interdigitated structure in comparison to various conventional emitter structures. Various modifications of the semiconductor substrate and the optimum excitation conditions were investigated. In the second part of this thesis the dynamic conductivity of GaAs/Al{sub x}Ga{sub 1-x}As superlattices in an applied static electric field was investigated with time-resolved THz spectroscopy. The original goal was to explore whether the

  14. GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

    Science.gov (United States)

    Heidelberger, Christopher; Fitzgerald, Eugene A.

    2018-04-01

    Heterojunction bipolar transistors (HBTs) with GaAs0.825P0.175 bases and collectors and In0.40Ga0.60P emitters were integrated monolithically onto Si substrates. The HBT structures were grown epitaxially on Si via metalorganic chemical vapor deposition, using SiGe compositionally graded buffers to accommodate the lattice mismatch while maintaining threading dislocation density at an acceptable level (˜3 × 106 cm-2). GaAs0.825P0.175 is used as an active material instead of GaAs because of its higher bandgap (increased breakdown voltage) and closer lattice constant to Si. Misfit dislocation density in the active device layers, measured by electron-beam-induced current, was reduced by making iterative changes to the epitaxial structure. This optimized process culminated in a GaAs0.825P0.175/In0.40Ga0.60P HBT grown on Si with a DC current gain of 156. By considering the various GaAsP/InGaP HBTs grown on Si substrates alongside several control devices grown on GaAs substrates, a wide range of threading dislocation densities and misfit dislocation densities in the active layers could be correlated with HBT current gain. The effect of threading dislocations on current gain was moderated by the reduction in minority carrier lifetime in the base region, in agreement with existing models for GaAs light-emitting diodes and photovoltaic cells. Current gain was shown to be extremely sensitive to misfit dislocations in the active layers of the HBT—much more sensitive than to threading dislocations. We develop a model for this relationship where increased base current is mediated by Fermi level pinning near misfit dislocations.

  15. Nitrogenated compounds' biofiltration under alternative bacterium fixation substrates Biofiltración de compuestos nitrogenados bajo medios de fijación bacteriana alternativos

    Directory of Open Access Journals (Sweden)

    Carlos Carroza

    2012-09-01

    Full Text Available This study compares the behavior of nitrification (NH4+, NO2- and NO3-, and performance, in terms of the surface TAN conversion rate (STR, volumetric TAN conversion rate (VTR and removal percentage of TAN (PTR among three fixation media of nitrifying bacteria (two alternatives (S1, S2 and one commercial (Co. The experiment was performed in two tests of 42 days each. Three isolated biofiltration systems were built for the experience, to which were added media colonized by bacteria as a "seed" to start the process of nitrification. Ammonium chloride (NH4Cl was attached as source of ammonium in reconditioned freshwater, also gradually adding inorganic carbon (HCO3- to maintain moderate water hardness. The average results for both tests indicate that the substrates S1 and S2 show a statistically similar behavior to the substrate Co (P > 0.05 during the first 33 days (until steady state. For the second test in terms of performance, STR values were 0.40, 0.39, 0.39 g TAN m-2 d-1 recorded for S2 and Co respectively; in terms of PRN, values were 92(3 9־/ and 93% for S1, S2 and Co, respectively. Regarding VTR, values of 72.31, 114.94, and 39.02 g TAN m-3 d-1 were recorded for S2 and Co respectively. Statistical analysis provided that for STR and PRN, no significant differences, were found. But for VTR, statistically significant differences between means were evaluated, registering for the S2 media the highest value of VTR.Se compara el comportamiento del proceso de nitrificación (NH4+, NO2- y NO3-, y el rendimiento, en términos de la tasa superficial de conversión de NAT, tasa volumétrica de conversión de NAT y porcentaje de remoción de NAT (PRN entre tres medios de fijación de bacterias nitrificantes, dos alternativos (S1, S2 y uno comercial (Co. La experiencia se realizó en dos pruebas de 42 días cada una. Se construyeron tres sistemas aislados para la experiencia, a los cuales se adicionaron medios colonizados por bacterias a modo de

  16. Exploration of GaAs structures for solid-state detectors

    International Nuclear Information System (INIS)

    Chmil', V.B.; Chuntonov, A.V.; Sergeev, V.A.

    1992-01-01

    The work describes the rsults on systematic search of GaAs structures for the solid-state detectors that should be exploited in a high flux of high energy particles and low energy neutrons. Three types of GaAs structures were found that can separate well a noise and signal spectra. The GaAs samples have been irradiated with a source of γ-ray and results of the response to the action of β-source are also presented. 7 refs.; 6 figs

  17. Effect of dopant density on contact potential difference across n-type GaAs homojunctions using Kelvin Probe Force Microscopy

    Science.gov (United States)

    Boumenou, C. Kameni; Urgessa, Z. N.; Djiokap, S. R. Tankio; Botha, J. R.; Nel, J.

    2018-04-01

    In this study, cross-sectional surface potential imaging of n+/semi-insulating GaAs junctions is investigated by using amplitude mode kelvin probe force microscopy. The measurements have shown two different potential profiles, related to the difference in surface potential between the semi-insulating (SI) substrate and the epilayers. It is shown that the contact potential difference (CPD) between the tip and the sample is higher on the semi-insulating substrate side than on the n-type epilayer side. This change in CPD across the interface has been explained by means of energy band diagrams indicating the relative Fermi level positions. In addition, it has also been found that the CPD values across the interface are much smaller than the calculated values (on average about 25% of the theoretical values) and increase with the electron density. Therefore, the results presented in study are only in qualitative agreement with the theory.

  18. Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates.

    Science.gov (United States)

    Araki, Yoshiaki; Yamaguchi, Masahito; Ishikawa, Fumitaro

    2013-02-15

    The concept of band engineering dilute nitride semiconductors into nanowires is introduced. Using plasma-assisted molecular beam epitaxy, dilute nitride GaAsN/GaAs heterostructure nanowires are grown on silicon (111) substrates. Growth of the nanowires under high As overpressure results in a regular wire diameter of 350 nm with a length exceeding 3 μm. The GaAsN/GaAs nanowires show characteristics including favorable vertical alignment, hexagonal cross-sectional structure with {110} facets, regions of wurtzite and zinc-blende phases, and a core-shell-type heterostructure. The nanowires are composed of GaAsN shells containing up to 0.3% nitrogen surrounding GaAs cores. Panchromatic cathodoluminescence images show intensity modulation along the length of the nanowires that is possibly related to the interfaces of wurtzite/zinc-blende regions. Photoluminescence with peak wavelengths between 870 and 920 nm is clearly observed at room temperature. The spectral red shift depends on the amount of introduced nitrogen. These results reveal a method for precise lattice and band engineering of nanowires composed of dilute nitride semiconductors.

  19. The electronic and optical properties of quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs: a first-principles study.

    Science.gov (United States)

    Ma, Xiaoyang; Li, Dechun; Zhao, Shengzhi; Li, Guiqiu; Yang, Kejian

    2014-01-01

    First-principles calculations based on density functional theory have been performed for the quaternary GaAs1-x-y N x Bi y alloy lattice-matched to GaAs. Using the state-of-the-art computational method with the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, electronic, and optical properties were obtained, including band structures, density of states (DOSs), dielectric function, absorption coefficient, refractive index, energy loss function, and reflectivity. It is found that the lattice constant of GaAs1-x-y N x Bi y alloy with y/x =1.718 can match to GaAs. With the incorporation of N and Bi into GaAs, the band gap of GaAs1-x-y N x Bi y becomes small and remains direct. The calculated optical properties indicate that GaAs1-x-y N x Bi y has higher optical efficiency as it has less energy loss than GaAs. In addition, it is also found that the electronic and optical properties of GaAs1-x-y N x Bi y alloy can be further controlled by tuning the N and Bi compositions in this alloy. These results suggest promising applications of GaAs1-x-y N x Bi y quaternary alloys in optoelectronic devices.

  20. Sputtering and surface structure modification of gold thin films deposited onto silicon substrates under the impact of 20–160 keV Ar{sup +} ions

    Energy Technology Data Exchange (ETDEWEB)

    Mammeri, S., E-mail: smammeri@yahoo.fr [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-Gare, Algiers (Algeria); Ouichaoui, S. [Université des Sciences et de la Technologie H. Boumediene (USTHB), Faculté de Physique, Laboratoire SNIRM, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria); Ammi, H.; Dib, A. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-Gare, Algiers (Algeria)

    2014-10-15

    Highlights: •Sputter yields were measured for gold thin films under keV Ar{sup +} ion bombardment. •RBS analysis was used to derive energy dependence of sputtering yield. •Surface effects under Ar{sup +} ion irradiation were studied by SEM and XRD analyses. -- Abstract: The induced sputtering and surface state modification of Au thin films bombarded by swift Ar{sup +} ions under normal incident angle have been studied over an energy range of (20–160) keV using three complementary techniques: Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The sputtering yields determined by RBS measurements using a 2 MeV {sup 4}He{sup +} ion beam were found to be consistent with previous data measured within the Ar{sup +} ion energy region E ⩽ 50 keV, which are thus extended to higher bombarding energies. Besides, the SEM and XRD measurements clearly point out that the irradiated Au film surfaces undergo drastic modifications with increasing the Ar{sup +} ion energy, giving rise to the formation of increasingly sized grains of preferred (1 1 1) crystalline orientations. The relevance of different sputtering yield models for describing experimental data is discussed with invoking the observed surface effects induced by the Ar{sup +} ion irradiation.

  1. Wet-etched phononic crystal waveguiding on GaAs

    Science.gov (United States)

    Muzar, Edward; Azodi Aval, Golnaz; Stotz, James A. H.

    2018-01-01

    A wet-etched phononic crystal waveguide in GaAs with approximately two micron deep inclusions is studied both numerically and experimentally for controlled surface acoustic wave propagation. Numerically, the phononic crystal was modelled using the finite element method (FEM) with COMSOL Multiphysics, and the surface displacement of the acoustic waves was measured using optical interferometry. The computed filter response of the phononic crystal confirmed that the phononic crystal was an effective stop band filter in the interval of 400 MHz and 450 MHz. An L1 linear defect waveguide with a stepped funnel entrance design is shown to perform well at a surface acoustic wave frequency of 410.344 MHz and in agreement to simulated results. The phononic crystal waveguide system shows promise for use in acoustic control of GaAs-based quantum nanostructures.

  2. Self-healing in fractured GaAs nanowires

    International Nuclear Information System (INIS)

    Wang Jun; Lu Chunsheng; Wang Qi; Xiao Pan; Ke Fujiu; Bai Yilong; Shen Yaogen; Wang Yanbo; Chen Bin; Liao Xiaozhou; Gao Huajian

    2012-01-01

    Molecular dynamics simulations are performed to investigate a spontaneous self-healing process in fractured GaAs nanowires with a zinc blende structure. The results show that such self-healing can indeed occur via rebonding of Ga and As atoms across the fracture surfaces, but it can be strongly influenced by several factors, including wire size, number of healing cycles, temperature, fracture morphology, oriented attachment and atomic diffusion. For example, it is found that the self-healing capacity is reduced by 46% as the lateral dimension of the wire increases from 2.3 to 9.2 nm, and by 64% after 24 repeated cycles of fracture and healing. Other factors influencing the self-healing behavior are also discussed.

  3. Observation of the anomalous Hall effect in GaAs

    International Nuclear Information System (INIS)

    Miah, M Idrish

    2007-01-01

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect

  4. Observation of the anomalous Hall effect in GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Miah, M Idrish [Nanoscale Science and Technology Centre, School of Science, Griffith University, Nathan, Brisbane, QLD 4111 (Australia); Department of Physics, University of Chittagong, Chittagong, Chittagong - 4331 (Bangladesh)

    2007-03-21

    Devices for the direct detection of the spin current, based on the anomalous Hall effect (AHE), are fabricated on n-type GaAs bulk semiconductor materials. The AHE is observed in the device when the photoinduced spin-polarized electrons are injected into it, and it is found that the effect depends on the applied electric field. The origin of the field-dependent observed Hall effect is discussed based on the D'yakonov-Perel' (DP) spin relaxation mechanism. The spin-dependent Hall effect is also found to be enhanced with increasing doping concentration. The present experimental results might have potential applications in semiconductor spintronic devices since the effect is closely related to the spin Hall effect.

  5. A comparative study of low energy radiation response of AlAs, GaAs and GaAs/AlAs superlattice and the damage effects on their electronic structures.

    Science.gov (United States)

    Jiang, M; Xiao, H Y; Peng, S M; Yang, G X; Liu, Z J; Zu, X T

    2018-01-31

    In this study, the low energy radiation responses of AlAs, GaAs and GaAs/AlAs superlattice are simulated and the radiation damage effects on their electronic structures are investigated. It is found that the threshold displacement energies for AlAs are generally larger than those for GaAs, i.e., the atoms in AlAs are more difficult to be displaced than those in GaAs under radiation environment. As for GaAs/AlAs superlattice, the Ga and Al atoms are more susceptible to the radiation than those in the bulk AlAs and GaAs, whereas the As atoms need comparable or much larger energies to be displaced than those in the bulk states. The created defects are generally Frenkel pairs, and a few antisite defects are also created in the superlattice structure. The created defects are found to have profound effects on the electronic properties of GaAs/AlAs superlattice, in which charge transfer, redistribution and even accumulation take place, and band gap narrowing and even metallicity are induced in some cases. This study shows that it is necessary to enhance the radiation tolerance of GaAs/AlAs superlattice to improve their performance under irradiation.

  6. Visualization of carrier dynamics in p(n)-type GaAs by scanning ultrafast electron microscopy.

    Science.gov (United States)

    Cho, Jongweon; Hwang, Taek Yong; Zewail, Ahmed H

    2014-02-11

    Four-dimensional scanning ultrafast electron microscopy is used to investigate doping- and carrier-concentration-dependent ultrafast carrier dynamics of the in situ cleaved single-crystalline GaAs(110) substrates. We observed marked changes in the measured time-resolved secondary electrons depending on the induced alterations in the electronic structure. The enhancement of secondary electrons at positive times, when the electron pulse follows the optical pulse, is primarily due to an energy gain involving the photoexcited charge carriers that are transiently populated in the conduction band and further promoted by the electron pulse, consistent with a band structure that is dependent on chemical doping and carrier concentration. When electrons undergo sufficient energy loss on their journey to the surface, dark contrast becomes dominant in the image. At negative times, however, when the electron pulse precedes the optical pulse (electron impact), the dynamical behavior of carriers manifests itself in a dark contrast which indicates the suppression of secondary electrons upon the arrival of the optical pulse. In this case, the loss of energy of material's electrons is by collisions with the excited carriers. These results for carrier dynamics in GaAs(110) suggest strong carrier-carrier scatterings which are mirrored in the energy of material's secondary electrons during their migration to the surface. The approach presented here provides a fundamental understanding of materials probed by four-dimensional scanning ultrafast electron microscopy, and offers possibilities for use of this imaging technique in the study of ultrafast charge carrier dynamics in heterogeneously patterned micro- and nanostructured material surfaces and interfaces.

  7. Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

    Science.gov (United States)

    Yang, Liu; Chang-Chun, Chai; Yin-Tang, Yang; Jing, Sun; Zhi-Peng, Li

    2016-04-01

    In this paper, we present the damage effect and mechanism of high power microwave (HPM) on AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (pHEMT) of low-noise amplifier (LNA). A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS). Experimental results accord well with the simulation of our model. Project supported by the National Basic Research Program of China (Grant No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (Grant No. 2015-0214.XY.K).

  8. Capacitance transients in p-type GaAs MOS structures and application to lifetime mapping during solar cell fabrication

    Science.gov (United States)

    Vitale, G.; Loferski, J. J.; Ercil, Y.

    1979-01-01

    Fabrication on p-type GaAs of MOS structures in which the quality of the oxide is such that the surface can be driven into deep inversion by a voltage pulse is reported. The capacitance transients in such MOS capacitors as a function of step amplitude and temperature were measured and the transients were analyzed by an extension of a method for silicon. The oxides were produced by plasma oxidation on an LPE-grown p-type GaAs specimen with N sub A of 3x10 to the 17th power/cu cm. The capacitors were produced by depositing 50 microns-diameter gold dots over the native oxide and, therefore, the lifetime is localized to the area under the dot. The method permits extraction of both the bulk lifetime and the interface recombination velocity. These parameters on samples with different N sub A were measured and a correlation between tau sub g and N sub A was found.

  9. Effects of gene augmentation on the removal of 2,4-dichlorophenoxyacetic acid in a biofilm reactor under different scales and substrate conditions

    Energy Technology Data Exchange (ETDEWEB)

    Quan Xiangchun, E-mail: xchquan@bnu.edu.cn [State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875 (China); Tang Hua; Ma Jingyun [State Key Laboratory of Water Environment Simulation, School of Environment, Beijing Normal University, Beijing 100875 (China)

    2011-01-30

    With a conjugative plasmid pJP4 carrying strain as the donor, two bioaugmentation experiments were conducted in a microcosm biofilm reactor with 2,4-D as the sole carbon source operated in fed-batch mode, and an enlarged lab-scale sequence batch biofilm reactor with mixed carbon sources of 2,4-D and other easily biodegradable compounds, respectively. In the microcosm study under sole carbon source condition, bioaugmentation led to a persistently increased 2,4-D degradation rate in the five operation cycles with enhancement of 13-64%. For the enlarged lab-scale bioaugmentation experiment under mixed carbon source conditions, no enhancement in 2,4-D removal could be observed during start-up period. After a period of operation, biofilm samples from the bioaugmented reactor demonstrated a stronger degradation capacity than the control and showed the presence of a large number of transconjugants. This study indicates that bioaugmentation based on plasmid horizontal transfer is a feasible strategy to establish functional microbial community in a biofilm reactor, and the strong selective pressure of 2,4-D existing alone and persistently was more favorable for the success of gene augmentation.

  10. Development of GaAs Detectors for Physics at the LHC

    CERN Multimedia

    Chu, Zhonghua; Krais, R; Rente, C; Syben, O; Tenbusch, F; Toporowsky, M; Xiao, Wenjiang; Cavallini, A; Fiori, F; Edwards, M; Geppert, R; Goppert, R; Haberla, C; Hornung, M F; Irsigler, R; Rogalla, M; Beaumont, S; Raine, C; Skillicorn, I; Margelevicius, J; Meshkinis, S; Smetana, S; Jones, B; Santana, J; Sloan, T; Zdansky, K; Alexiev, D; Donnelly, I J; Canali, C; Chiossi, C; Nava, F; Pavan, P; Kubasta, J; Tomiak, Z; Tchmil, V; Tchountonov, A; Tsioupa, I; Dogru, M; Gray, R; Hou, Yuqian; Manolopoulos, S; Walsh, S; Aizenshtadt, G; Budnitsky, D L; Gossen, A; Khludkov, S; Koretskaya, O B; Okaevitch, L; Potapov, A; Stepanov, V E; Tolbanov, O; Tyagev, A; Matulionis, A; Pozela, J; Kavaliauskiene, G; Kazukauskas, V; Kiliulis, R; Rinkevicius, V; Slenys, S; Storasta, J V

    2002-01-01

    % RD-8 Development of GaAs Detectors for Physics at the LHC \\\\ \\\\The aims of the collaboration are to investigate the available material options, performance and limitations of simple pad, pixel and microstrip GaAs detectors for minimum ionising particles with radiation hardness and speed which are competitive with silicon detectors. This new technology was originally developed within our university laboratories but now benefits from increasing industrial interest and collaboration in detector fabrication. Initial steps have also been taken towards the fabrication of GaAs preamplifiers to match the detectors in radiation hardness. The programme of work aims to construct a demonstration detector module for an LHC forward tracker based on GaAs.

  11. High Purity GaAs Far IR Photoconductor With Enhanced Quantum Efficieny, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal introduces an innovative concept aimed to significantly enhance the quantum efficiency of a far-infrared GaAs photoconductor and achieve sensitivity...

  12. Initial test of an rf gun with a GaAs cathode installed

    International Nuclear Information System (INIS)

    Aulenbacher, K.; Bossart, R.; Braun, H.

    1996-09-01

    The operation of an rf gun with a GaAs crystal installed as the cathode has been tested in anticipation of eventually producing a polarized electron beam for a future e + /e - collider using an rf photoinjector

  13. Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

    Directory of Open Access Journals (Sweden)

    Takeo Ohno and Yutaka Oyama

    2012-01-01

    Full Text Available In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE, in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm-2. They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

  14. Si3N4/Si/In0.05Ga0.95As/n endash GaAs metal endash insulator endash semiconductor devices

    International Nuclear Information System (INIS)

    Park, D.; Li, D.; Tao, M.; Fan, Z.; Botchkarev, A.E.; Mohammad, S.N.; Morkoc, H.

    1997-01-01

    We report a novel metal endash insulator endash semiconductor (MIS) structure exhibiting a pseudomorphic In 0.05 Ga 0.95 As layer on GaAs with interface state densities in the low 10 11 eV -1 cm -2 . The structure was grown by a combination of molecular beam epitaxy and chemical vapor deposition methods. The hysteresis and frequency dispersion of the MIS capacitor were lower than 100 mV, some of them as low as 30 mV under a field swing of about ±1.3 MV/cm. The 150-Angstrom-thick In 0.05 Ga 0.95 As channel between Si and GaAs is found to bring about a change in the minority carrier recombination behavior of the GaAs channel, in the same way as done by In 0.53 Ga 0.47 As channel MIS structures. Self-aligned gate depletion mode In 0.05 Ga 0.95 As metal endash insulator endash semiconductor field-effect transistors having 3 μm gate lengths exhibited field-effect bulk mobility of 1400 cm 2 /Vs and transconductances of about 170 mS/mm. copyright 1997 American Institute of Physics

  15. Basic mechanisms study for MIS solar cell structures on GaAs

    Science.gov (United States)

    Fonash, S. J.

    1978-01-01

    The solar cell structure examined is the MIS configuration on (n) GaAs. The metal room temperature oxide/(n) GaAs materials system was studied. Metals with electronegativities varying from 2.4 (Au) to 1.5 (Al) were used as the upper electrode. The thinnest metallization that did not interfere with the measurement techniques (by introducing essentially transmission line series resistance problems across a device) was used. Photovoltaic response was not optimized.

  16. Microhardness of epitaxial layers of GaAs doped with rare earths

    International Nuclear Information System (INIS)

    Kulish, U.M.; Gamidov, Z.S.; Kuznetsova, I.Yu.; Petkeeva, L.N.; Borlikova, G.V.

    1989-01-01

    Results of the study of microhardness of GaAS layer doped by certain rare earths - Gd, Tb, Dy - are presented. The assumption is made that the higher is the value of the first potential of rare earth impurity ionization (i.e. the higher is the filling of 4f-shell), the lower is the effect of the element on electric and mechanical properties of GaAs epitaxial layers

  17. Capacitance-voltage measurements in GaAs thin-film epitaxial structures

    Directory of Open Access Journals (Sweden)

    Gorev N. B.

    2009-10-01

    Full Text Available It is shown that capacitance–voltage characteristics that feature steeply dropping regions, in particular those of GaAs thin-film structures, may be measured at moderately small amplitudes of the measuring ac voltage (of the order of 100 mV at the expense of taking measurements at two different amplitudes. This conclusion is confirmed by the results of numerical calculation of the apparent capacitance of GaAs epitaxial structures.

  18. Temperature and 8 MeV electron irradiation effects on GaAs solar cells

    Indian Academy of Sciences (India)

    GaAs solar cell parameters up to an electron dose of 100 kGy, exhibiting good tolerance for electrons of 8 MeV energy. Keywords. GaAs solar cell; temperature; electron irradiation; current–voltage charac- teristics; capacitance–frequency characteristics; efficiency. PACS Nos 29.25.Bx; 61.82.Fk; 82.47.Jk; 42.79.Ek. 1.

  19. Influence of back reflections on the detection efficiency of superconducting nanowire single-photon detectors on GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Ekkehart; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany); Schwartz, Mario; Herzog, Thomas; Jetter, Michael; Michler, Peter [Institut fuer Halbleiteroptik und funktionelle Grenzflaechen (IHFG), Universitaet Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)

    2016-07-01

    In an on chip quantum photonic device, which consists of quantum dots, a waveguide based logic and a SNSPD, the quantum dots are conveniently excited by a laser beam. Backside reflection of these excitation photons can lead to their detection by the SNSPD and therefore to malfunction of the whole photonic circuit. We studied the effect of back reflections at the substrate/sample-holder interface on the detection properties of NbN SNSPDs on a GaAs substrate with a 12 nm AlN buffer layer. The SNSPDs have a width of 120 nm, a thickness of 6 nm, a critical temperature of 9.9 K and a critical current density of 2.8 MA/cm{sup 2} at 4.2K. Two identical SNSPDs were fabricated from the same NbN film at a distance of 50 μm from each other. One of these SNSPDs was covered with a bi-layer of 20 nm thick AlN and 110 nm thick Al to prevent top illumination, making it only sensitive to backscattered photons. Results of the study of the influence of backscattered photons on the optical response of the SNSPDs and possibilities to avoid them will be discussed in detail.

  20. The preparation and characterization of chitin and chitosan under large-scale submerged fermentation level using shrimp by-products as substrate.

    Science.gov (United States)

    Zhang, Hongcai; Yun, Sanyue; Song, Lingling; Zhang, Yiwen; Zhao, Yanyun

    2017-03-01

    The crustacean shells of crabs and shrimps produces quantities of by-products, leading to seriously environmental pollution and human health problems during industrial processing, yet they turned into high-value useful products, such as chitin and chitosan. To prepare them under large-scale submerged fermentation level, shrimp shell powders (SSPs) was fermented by successive three-step fermentation of Serratia marcescens B742, Lactobacillus plantarum ATCC 8014 and Rhizopus japonicus M193 to extract chitin and chitosan based on previously optimal conditions. Moreover, the key parameters was investigated to monitor the changes of resulted products during fermentation process. The results showed that the yield of prepared chitin and chitosan reached 21.35 and 13.11% with the recovery rate of 74.67 and 63.42%, respectively. The degree of deacetylation (DDA) and molecular mass (MM) of produced chitosan were 81.23% and 512.06kDa, respectively. The obtained chitin and chitosan was characterized using Fourier transform infrared spectrometer (FT-IR) and X-ray diffraction (XRD) analysis. The established microbial fermentation method can be applied for the industrial large-scale production of chitin and chitosan, while the use of chemical reagents was significantly reduced. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. Substratos na aclimatização de Pfaffia glomerata (Spreng Pedersen produzida in vitro sob diferentes doses de sacarose Substrates in the acclimatization of Pfaffia glomerata (Spreng. Pedersen produced in vitro under different levels of sucrose

    Directory of Open Access Journals (Sweden)

    Etiane Caldeira Skrebsky

    2006-10-01

    Full Text Available Este trabalho teve como objetivo selecionar substratos para a aclimatização de plântulas de Pfaffia glomerata produzidas in vitro sob diferentes concentrações de sacarose. Os tratamentos consistiram de uma combinação bifatorial (5x3 entre cinco doses de sacarose (15, 30, 45, 60 e 75g L-1, presentes no meio de cultura in vitro, e três substratos [Plantmax® Hortaliças, Plantmax® + Solo (1:1 v/v e Vermiculita (granulometria média + Solo (ARGISSOLO VERMELHO Distrófico arênico (1:1 v/v] utilizados na aclimatização ex vitro. Foram realizadas determinações das características físicas e químicas dos substratos, bem como avaliações do crescimento e da sobrevivência das plantas tanto durante o cultivo in vitro como no ex vitro. Plantas provenientes do cultivo in vitro na presença de 45 a 60g L-1 de sacarose apresentaram melhor aclimatização ex vitro. As combinações dos substratos Vermiculita + solo (1:1 v/v e Plantmax® + solo (1:1 v/v proporcionaram maior crescimento às plantas durante a última fase de aclimatização (cultivo sob sombrite, provavelmente devido a possuírem maior porosidade total. Entretanto, o uso isolado de Plantmax® aumentou a sobrevivência das plantas cultivadas a campo, fato relacionado a esse substrato possuir os maiores valores de capacidade de retenção de água, de água facilmente disponível e de água disponível.This work was aimed at selecting substrates on the ex vitro acclimatization of Pfaffia glomerata produced in vitro under different sucrose levels. The treatments consisted of a bifactorial combination (5x3 between five sucrose levels (15, 30, 45, 60, and 75g L-1, present in the in vitro culture, and three substrates [Plantmax®; Plantmax® + soil (1:1 v/v, and vermiculite (middle size + soil (Paleudalf (1:1 v/v] used in the ex vitro acclimatization steps. Physical and chemical evaluations of the substrates were carried out as well as evaluations of plant growth and survival for both

  2. Advanced device for testing the electrical behavior of conductive coatings on flexible polymer substrates under oscillatory bending: comparison of coatings of sputtered indium-tin oxide and poly3,4ethylenedioxythiophene

    International Nuclear Information System (INIS)

    Königer, Tobias; Münstedt, Helmut

    2008-01-01

    A special device was designed and set up to investigate the electrical behavior of conductive layers on flexible substrates under oscillatory bending. The resistance of conductive coatings can be measured during various oscillatory bending conditions. The bending radius, the amplitude and the frequency can be set to well-defined values. Furthermore, the setup allows us to apply tensile or compressive stress to the coating as well as both stresses alternately. Thus, various bending loads occurring in printable electronics applications can be simulated to investigate the electrical reliability of conductive coatings. In addition, it is possible to simulate different environmental conditions during oscillatory bending by running the device in an environmental chamber. Characterizations of the electrical behavior under oscillatory bending were carried out on commercially available polyethyleneterephthalate (PET) films sputtered with indium-tin oxide (ITO) and coated with poly3,4ethylenedioxythiophene (PEDOT). For coatings of sputtered ITO, a dramatic increase of the resistance is observed for bending radii smaller than 14 mm due to cracks spanning the whole sample width. The higher the amplitude, the more pronounced is the increase of the resistance. Coatings of PEDOT show high stability under oscillatory bending. There is no change in resistance observed for all bending radii and amplitudes applied over a large number of cycles

  3. Electron microscopy of an aluminum layer grown on the vicinal surface of a gallium arsenide substrate

    Energy Technology Data Exchange (ETDEWEB)

    Lovygin, M. V., E-mail: lemi@miee.ru; Borgardt, N. I. [National Research University of Electronic Technology “MIET” (Russian Federation); Kazakov, I. P. [Russian Academy of Sciences, Lebedev Physical Institute (Russian Federation); Seibt, M. [Universität Göttingen, IV. Physikalisches Institut (Germany)

    2015-03-15

    A thin Al layer grown by molecular-beam epitaxy on a misoriented GaAs (100) substrate is studied by transmission electron microscopy. Electron diffraction data and bright-field, dark-field, and high-resolution images show that, in the layer, there are Al grains of three types of crystallographic orientation: Al (100), Al (110), and Al (110)R. The specific structural features of the interfaces between the differently oriented grains and substrate are studied by digital processing of the high-resolution images. From quantitative analysis of the dark-field images, the relative content and sizes of the differently oriented grains are determined. It is found that atomic steps at the substrate surface cause an increase in the fraction and sizes of Al (110)R grains and a decrease in the fraction of Al (100) grains, compared to the corresponding fractions and sizes in the layer grown on a singular substrate surface.

  4. ITER TASK T252 (1995):Gamma radiation testing of a GaAs operational amplifier for instrument applications

    International Nuclear Information System (INIS)

    Hiemstra, D.

    1996-03-01

    The purpose of this 1995 ITER task was : to build an improved operational amplifier using GaAs MESFET technology, to build a reference voltage subcircuit using GaAs MESFET technology and to investigate the potential of GaAs HBT's to improve the noise performance of the GaAs MESFET operational amplifier. This work addresses the need for instrumentation-grade components to read sensors in an experimental fusion reactor, where the anticipated total dose for a useful service life is 3Grad(GaAs). It is an extension of our 1994 work. 3 tabs., 6 figs

  5. Defect studies in low-temperature-grown GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bliss, David Emory [Univ. of California, Berkeley, CA (United States)

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies VGa. The neutral AsGa-related defects were measured by infrared absorption at 1μm. Gallium vacancies, VGa, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 1019 cm-3 Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more AsGa in the layer. As AsGa increases, photoquenchable AsGa decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral AsGa content around 500C, similar to irradiation damaged and plastically deformed GaAs, as opposed to bulk grown GaAs in which AsGa-related defects are stable up to 1100C. The lower temperature defect removal is due to VGa enhanced diffusion of AsGa to As precipitates. The supersaturated VGa and also decreases during annealing. Annealing kinetics for AsGa-related defects gives 2.0 ± 0.3 eV and 1.5 ± 0.3 eV migration enthalpies for the AsGa and VGa. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable AsGa-related defects anneal with an activation energy of 1.1 ± 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of AsGa-BeGa pairs. Si donors can only be partially activated.

  6. Defect studies in low-temperature-grown GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  7. Soudage par explosion thermique sous charge de cermets poreux à base de TiC-Ni sur substrat en acier-comportement tribologique Welding of porous TiC–Ni based cermets on substrate steel by thermal explosion under load-tribological behaviour

    Directory of Open Access Journals (Sweden)

    Lemboub Samia

    2013-11-01

    Full Text Available Dans ce travail, nous nous intéressons à l'élaboration de cermets à base de TiC-Ni par dispersion de particules de carbures, oxydes ou borures dans une matrice de nickel, grâce à la technique de l'explosion thermique sous une charge de 20 MPa. La combustion de mélanges actifs (Ti-C-Ni-An où An = Al2O3, MgO, SiC, TiB2, WC, basée sur la réaction de synthèse de TiC (ΔHf298K = −184 kJ/mole, génère des cermets complexes. Un court maintien sous charge du cermet à 1373 K, après l'explosion thermique, permet son soudage sur un substrat en acier XC55. Les cermets obtenus dans ces conditions demeurent poreux et conservent une porosité de l'ordre de 25–35 %. La densité relative du cermet, sa dureté et son comportement tribologique, dépendront de la nature de l'addition dans les mélanges de départ. Porous TiC-Ni based cermets were obtained by dispersion of carbides, oxides or borides particles in a nickel matrix thanks to the thermal explosion technique realized under a load of 20 MPa. The combustion of active mixtures (Ti-C-Ni-An where An = Al2O3, MgO, SiC, TiB2 or WC based on the titanium carbide reaction synthesis (ΔHf = −184 kJ/mol, generates porous complex cermets. After the thermal explosion, a short maintenance under load at 1373 K of the combustion product, allows at the same time the cermets welding on a carbon steel substrate. The obtained cermets under these conditions preserve a porosity of about 25–35%. The relative density, hardness and tribological behaviour of the complex cermets depend on the additions nature (An in the starting mixtures.

  8. In-situ NAP XPS studies of dissociative water adsorption on GaAs(100) surfaces

    Science.gov (United States)

    Ptasinska, Sylwia; Zhang, Xueqiang

    2014-03-01

    In current semiconductor-based technology it is important to design and fabricate new materials in order to achieve specific well-defined properties and functionalities. Before such systems can be applied they first need to be understood, refined and controlled. Therefore, a basic knowledge about molecule/semiconductor surface interfaces is essential. In the present work dissociative water adsorption on the GaAs(100) surface is monitored using X-ray Photoelectron Spectroscopy (XPS) performed in situ under near ambient conditions. Firstly, the crystal surface is exposed to water vapor pressures ranging from UHV to 0.5 kPa. At elevated pressures an increase of oxygenation and hydroxylation of Ga surface atoms has been observed in the Ga2p XPS spectra. Moreover, intense signals obtained from molecularly adsorbed water molecules or water molecules adsorbed via hydrogen bond to surface OH groups have been also observed in the O1s spectra. Finally, the crystal surface is annealed up to 700 K at water vapor pressure of 0.01 kPa, which leads to desorption of physisorbed water molecules and further increase of surface oxidation. The research described herein was supported by the Division of Chemical Sciences, Geosciences and Biosciences, Basic Energy Sciences, Office of Science, United States Department of Energy through grant number DE-FC02-04ER15533.

  9. Breakover mechanism of GaAs photoconductive switch triggering spark gap for high power applications

    Science.gov (United States)

    Tian, Liqiang; Shi, Wei; Feng, Qingqing

    2011-11-01

    A spark gap (SG) triggered by a semi-insulating GaAs photoconductive semiconductor switch (PCSS) is presented. Currents as high as 5.6 kA have been generated using the combined switch, which is excited by a laser pulse with energy of 1.8 mJ and under a bias of 4 kV. Based on the transferred-electron effect and gas streamer theory, the breakover characteristics of the combined switch are analyzed. The photoexcited carrier density in the PCSS is calculated. The calculation and analysis indicate that the PCSS breakover is caused by nucleation of the photoactivated avalanching charge domain. It is shown that the high output current is generated by the discharge of a high-energy gas streamer induced by the strong local electric field distortion or by overvoltage of the SG resulting from quenching of the avalanching domain, and periodic oscillation of the current is caused by interaction between the gas streamer and the charge domain. The cycle of the current oscillation is determined by the rise time of the triggering electric pulse generated by the PCSS, the pulse transmission time between the PCSS and the SG, and the streamer transit time in the SG.

  10. Study of the effects of interactions quantum interference and disorder in GaAs and of GaAs jointed to a superconductor; Etude des effets d`interference quantique et de desordre dans GaAs avec interactions et GaAs connecte a un supraconducteur

    Energy Technology Data Exchange (ETDEWEB)

    Poirier, W.

    1997-11-07

    The aim of this thesis is to study the coherent transport in semiconducting-superconducting junctions. The SnPb-GaAs system has been studied. It has been shown that the behaviour of this junction is controlled by the disordered area induced by the annealing of the connection near the interface. For a few resistant junction, a conductance anomaly under the gap has been observed and has been explained by a mesoscopic effect in the limit of the very high disorders. The conductance of more resistant junctions has only been bound to the properties of the very disordered area of the semiconductor. The part of the electron-electron interactions on the phase coherence length and on the conductance has been studied. The evolving of the correction of the conductance due to interactions in magnetic field has been followed. The effect of the spin degeneration suppression in CdTe and the GaAs sign inversion in Shubnikov de Haas oscillations rate has been observed. At last has been studied the transport properties of the quasi-unidimensional disordered insulators. (O.M.) 116 refs.

  11. Heat load of a P-doped GaAs photocathode in SRF electron gun

    International Nuclear Information System (INIS)

    Wang, E.; Ben-Zvi, I.; Kewisch, J.; Burrill, A.; Rao, T.; Wu, Q.; Jain, A.; Gupta, R.; Holmes, D.

    2010-01-01

    Many efforts were made over the last decades to develop a better polarized electron source for the high energy physics. Several laboratories operate DC guns with the Gallium-Arsenide photo-cathode, which yield a highly polarized electron beam. However, the beam's emittance might well be improved using a Superconducting RF electron gun, which delivers beams of higher brightness than DC guns does, because the field gradient at the cathode is higher. SRF guns with metal cathodes and CsTe cathodes have been tested successfully. To produce polarized electrons, a Gallium-Arsenide photo-cathode must be used: an experiment to do so in a superconducting RF gun is under way at BNL. Since the cathode will be normal conducting, the problem about the heat load stemming from the cathode arises. We present our measurements of the electrical resistance of GaAs at cryogenic temperatures, a prediction of the heat load and the verification by measuring the quality factor of the gun with and without cathode.

  12. CHEMICAL DISSOLUTION InAs, InSb, GaAs AND GaSb IN THE (NH42Cr2O7−HBr−H2O ETCHING COMPOSITIONS

    Directory of Open Access Journals (Sweden)

    I. V. Levchenko

    2017-09-01

    Full Text Available The features of InAs, InSb, GaAs, and GaSb dissolution in the (NH42Cr2O7−HBr−H2O etching compositions have been investigated. The chemical-dynamic polishing in the reproducible hydrodynamic conditions has been used. It was established that the arsenides etching rate changed similarly and achieved the maximum values in the oxidant saturated mixture (22 vol.%. It was found that the antimonides dissolution rate increases when the (NH42Cr2O7 concentration is increasing also. It was established that all etching compositions are polishing for InAs and GaAs, and in the case of InSb and GaSb the polishing solutions occupy about 50 % of the investigated concentrated regions. It was shown that the dissolution rate of all crystals decreases to 0,1 μm/min and the quality of the antimonides surface degrades when the H2O concentration is increasing. The substrates dissolution has the diffusion nature. Using metallographic analysis and atomic force microscopy it was confirmed a good quality of InAs, InSb, GaAs and GaSb surface obtained after chemical treatment in the (NH42Cr2O7−HBr−H2O polishing solutions.

  13. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

    Science.gov (United States)

    Kisan Patil, Pallavi; Luna, Esperanza; Matsuda, Teruyoshi; Yamada, Kohki; Kamiya, Keisuke; Ishikawa, Fumitaro; Shimomura, Satoshi

    2017-03-01

    We report a GaAs0.96Bi0.04/GaAs multiple quantum well (MQW) light emitting diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) technique. In particular, the QWs and the barriers in the intrinsic region were grown at the different temperatures of {T}{{GaAsBi}} = 350 °C and {T}{{GaAs}} = 550 ^\\circ {{C}}, respectively. Investigations of the microstructure using transmission electron microscopy (TEM) reveal homogeneous MQWs free of extended defects. Furthermore, the local determination of the Bi distribution profile across the MQWs region using TEM techniques confirm the uniform Bi distribution, while revealing a slightly chemically graded GaAs-on-GaAsBi interface due to Bi surface segregation. Despite this small broadening, we found that Bi segregation is significantly reduced (up to 18% reduction) compared to previous reports on Bi segregation in GaAsBi/GaAs MQWs. Hence, the TST procedure proves as a very efficient method to reduce Bi segregation and thus increase the quality of the layers and interfaces. These improvements positively reflect in the optical properties. Room temperature photoluminescence and electroluminescence (EL) at 1.23 μm emission wavelength are successfully demonstrated using TST MQWs containing less Bi content than in previous reports. Finally, LED fabricated using the present TST technique show current-voltage (I-V) curves with a forward voltage of 3.3 V at an injection current of 130 mA under 1.0 kA cm-2 current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.

  14. Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures

    International Nuclear Information System (INIS)

    Chen Liang; Qian Yun-Sheng; Zhang Yi-Jun; Chang Ben-Kang

    2012-01-01

    Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures. On the basis of our early research on the surface photovoltage of GaAs photocathodes, and comparative research before and after activation of reflection-mode GaAs photocathodes, we further the comparative research on transmission-mode GaAs photocathodes. An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer. By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure, we can obtain the equations for the surface photovoltage (SPV) curve before activation and the spectral response curve (SRC) after activation. Through experiments and fitting calculations for the designed material, the body-material parameters can be well fitted by the SPV before activation, and proven by the fitting calculation for SRC after activation. Through the comparative research before and after activation, the average surface escape probability (SEP) can also be well fitted. This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method, which only measures the body parameters by SRC after activation. It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes, and optimize the Cs-O activation technique in the future. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  15. Parâmetros fisiológicos de mudas de copaíba sob diferentes substratos e condições de sombreamento Physiological parameters in seedlings of copaiba under different shade conditions and substrates

    Directory of Open Access Journals (Sweden)

    Tiago Reis Dutra

    2012-07-01

    Full Text Available O presente trabalho teve como objetivo avaliar parâmetros fisiológicos de mudas de copaíba produzidas sob o efeito de diferentes níveis de sombreamento e tipos de substratos. O experimento teve a duração de 130 dias e foi conduzido em blocos casualizados no esquema fatorial 5x4, com cinco substratos: Bioplant®; 70% vermiculita + 30% casca de arroz carbonizada; 40% vermiculita + 30% casca de arroz carbonizada + 30% fibra de coco; 50% vermiculita + 30% casca de arroz carbonizada + 20% areia; 70% vermiculita + 15% casca de arroz carbonizada + 15% vermicomposto de resíduo de indústria têxtil; quatro níveis de sombreamento (100, 70, 50 e 30% do pleno sol e três repetições. O nível de sombreamento de 50% em relação ao pleno sol possibilitou a produção de mudas de copaíba com maiores teores de clorofila b e clorofila total, além de proporcionar os menores valores de transpiração diária e ao longo do dia das plantas. A área foliar, os teores de clorofila e a transpiração das mudas de copaíba independem do tipo de substrato, podendo ser produzidas em qualquer um dos meios de crescimento avaliados.This research aimed to evaluate physiological parameters of seedlings of copaiba produced under the effect of different shading levels and types of substrates. The experiment lasted 130 days and was conducted in randomized blocks in factorial scheme 5x4 with five substrates: Bioplant®, 70% vermiculite + 30% rice hulls, 40% vermiculite + 30% rice charred hulls + 30% fiber coconut, 50% vermiculite + 30% rice charred hulls + 20% sand, 70% vermiculite + 15% rice charred hulls + 15% vermicompost residue of textile industry; four shading levels (100, 70, 50 and 30% full sun and three replications. The shade level of 50% compared to full sun, enabled the production of seedlings of Copaiba with higher concentrations of chlorophyll b and total chlorophyll, and provided the lowest daily transpiration throughout the day and the plants. The leaf

  16. Contact degradation of GaAs transferred electron devices

    International Nuclear Information System (INIS)

    Palmstroem, C.J.; Morgan, D.V.; Howes, M.J.

    1978-01-01

    The migration of contact material into the GaAs devices may degrade the device performance (noise, power output) and can shorten the mean time to failure of operational devices. In order to understand contact degradation the interdiffusion of gold/germanium contacts on gallium arsenide has been studied using Rutherford backscattering, ion microprobe (SIMS) and microbeam techniques. Both the depth profiling and imaging properties of the ion microprobe have been used. The microbeam was used for focused Rutherford backscattering giving a lateral resolution approximately 10 μm. When used in conjunction with angle lapped samples it allows analysis to be conducted to greater depths and hence one may use thicker contact films. The use of these techniques has enabled both the lateral and depth distributions of gold, germanium, gallium and arsenic to be obtained. These distributions have revealed gold and germanium spike formation beneath the contact. The information obtained provides insight into the mechanisms involved in the formation of ohmic contacts to gallium arsenide. The degradation of such contacts as a result of thermal and electrical effects is discussed. (Auth.)

  17. Semiconductor GaAs: electronic paramagnetic resonance new data

    International Nuclear Information System (INIS)

    Benchiguer, T.

    1994-04-01

    The topic of this study was to put to the fore, thanks to our electron spin resonance experiments, one charge transfer process, which was optically induced between the deep donor As + G a and the different acceptors, which were present in the material. We described these processes through a theoretical model, which we named charge transfer model. With this latter, we were able to trace a graph network, representing the As + G a concentration kinetics. Then we verified the compatibility of our model with one transport experiment. One experimental verification of our model were delivered, thanks to neutronic transmutation doping. The following stage was the study of defects, induced by thermal strains, to which the crystal was submitted during the cooling phase. At last we wanted to get round the non solved super hyperfine structure problem for GaAs by studying another III-V material for which she was resolved, namely gallium phosphide. (MML). 150 refs., 72 figs., 16 tabs., 3 annexes

  18. Point defects in GaAs and other semiconductors

    International Nuclear Information System (INIS)

    Ehrhart, P.; Karsten, K.; Pillukat, A.

    1993-01-01

    In order to understand the properties of intrinsic point defects and their interactions at high defect concentrations GaAs wafers were irradiated at 4.5 K with 3 MeV electrons up to a dose of 4 · 10 19 e - /cm 2 . The irradiated samples were investigated by X-ray Diffraction and optical absorption spectroscopy. The defect production increases linearly with irradiation dose and characteristic differences are observed for the two sublattices. The Ga-Frenkel pairs are strongly correlated and are characterized by much larger lattice relaxations (V rel = 2--3 atomic volumes) as compared to the As-Frenkel pairs (V rel ∼1 at. vol.). The dominating annealing stage around 300 K is attributed to the mobility of the Ga interstitial atoms whereas the As-interstitial atoms can recombine with their vacancies only around 500 K. These results are compared to those for InP, ZnSe and Ge. Implications for the understanding of the damage after ion irradiation and implantation are discussed

  19. Photochemical etching of GaAs using synchrotron radiation

    Energy Technology Data Exchange (ETDEWEB)

    Terakado, Shingo; Nishino, Jun-ichi; Morigami, Mitsuaki; Harada, Mitsuaki; Suzuki, Shigeo (SANYO Electric Co. Ltd., Tsukuba, Ibaraki (Japan). Tsukuba Research Center); Tanaka, Kenichiro; Chikawa, Jun-ichi

    1990-05-01

    The photochemical etching of gallium arsenide by chlorine was investigated using synchrotron radiation. At the substrate temperatures above 25degC, both the irradiated and nonirradiated regions were uniformly etched. In case of substrate temperatures below -25degC, highly selective etching was observed in the irradiated region. We considered that at low temperatures, etching reaction caused by gas-phase excitation is suppressed and photochemical surface reaction becomes dominant. (author).

  20. Imparting Icephobicity with Substrate Flexibility

    Science.gov (United States)

    Schutzius, Thomas; Vasileiou, Thomas; Poulikakos, Dimos

    2017-11-01

    Ice accumulation poses serious safety and performance issues for modern infrastructure. Rationally designed superhydrophobic surfaces have demonstrated potential as a passive means to mitigate ice accretion; however, further studies on solutions that reduce impalement and contact time for impacting supercooled droplets are urgently needed. Here we demonstrate the collaborative effect of substrate flexibility and surface texture on enhancing icephobicity and repelling viscous droplets. We first investigate the influence of increased viscosity on impalement resistance and droplet-substrate contact time. Then we examine the effect of droplet partial solidification on recoil by impacting supercooled water droplets onto surfaces containing ice nucleation promoters. We demonstrate a passive method for shedding partially solidified droplets that does not rely on the classic recoil mechanism. Using an energy-based model, we identify a previously unexplored mechanism whereby the substrate oscillation governs the rebound process by efficiently absorbing the droplet kinetic energy and rectifying it back, allowing for droplet recoil. This mechanism applies for a range of droplet viscosities and ice slurries, which do not rebound from rigid superhydrophobic substrates. Partial support of the Swiss National Science Foundation under Grant No. 162565 and the European Research Council under Advanced Grant No. 669908 (INTICE) is acknowledged.

  1. Multilayer self-organization of InGaAs quantum wires on GaAs surfaces

    International Nuclear Information System (INIS)

    Wang, Zhiming M.; Kunets, Vasyl P.; Xie, Yanze Z.; Schmidbauer, Martin; Dorogan, Vitaliy G.; Mazur, Yuriy I.; Salamo, Gregory J.

    2010-01-01

    Molecular-Beam Epitaxy growth of multiple In 0.4 Ga 0.6 As layers on GaAs (311)A and GaAs (331)A has been investigated by Atomic Force Microscopy and Photoluminescence. On GaAs (311)A, uniformly distributed In 0.4 Ga 0.6 As quantum wires (QWRs) with wider lateral separation were achieved, presenting a significant improvement in comparison with the result on single layer [H. Wen, Z.M. Wang, G.J. Salamo, Appl. Phys. Lett. 84 (2004) 1756]. On GaAs (331)A, In 0.4 Ga 0.6 As QWRs were revealed to be much straighter than in the previous report on multilayer growth [Z. Gong, Z. Niu, Z. Fang, Nanotechnology 17 (2006) 1140]. These observations are discussed in terms of the strain-field interaction among multilayers, enhancement of surface mobility at high temperature, and surface stability of GaAs (311)A and (331)A surfaces.

  2. Ab initio structural and vibrational properties of GaAs diamondoids and nanocrystals

    Directory of Open Access Journals (Sweden)

    Mudar Ahmed Abdulsattar

    2014-12-01

    Full Text Available Gallium arsenide diamondoids structural and vibrational properties are investigated using density functional theory at the PBE/6-31(d level and basis including polarization functions. Variation of energy gap as these diamondoids increase in size is seen to follow confinement theory for diamondoids having nearly equiaxed dimensions. Density of energy states transforms from nearly single levels to band structure as we reach larger diamondoids. Bonds of surface hydrogen with As atoms are relatively localized and shorter than that bonded to Ga atoms. Ga-As bonds have a distribution range of values due to surface reconstruction and effect of bonding to hydrogen atoms. Experimental bulk Ga-As bond length (2.45 Å is within this distribution range. Tetrahedral and dihedral angles approach values of bulk as we go to higher diamondoids. Optical-phonon energy of larger diamondoids stabilizes at 0.037 eV (297 cm-1 compared to experimental 0.035 eV (285.2 cm-1. Ga-As force constant reaches 1.7 mDyne/Å which is comparable to Ga-Ge force constant (1.74 mDyne/Å. Hydrogen related vibrations are nearly constant and serve as a fingerprint of GaAs diamondoids while Ga-As vibrations vary with size of diamondoids.

  3. In(0.52)Al(0.48)/In(0.53)Ga(0.47)As heterojunction bipolar transistor on GaAs by molecular beam epitaxy

    Science.gov (United States)

    Won, T.; Agarwala, S.; Morkoc, H.

    1988-12-01

    The successful operation of In(0.52)Al(0.48)As/In(0.53)Ga(0.47)As NpN double heterojunction bipolar transistors grown on GaAs substrates is reported. A 10-period AlAs/In(0.52)Al(0.48)As (20 A/20 A) strained-layer superlattice was repeated twice with intervening undoped In(0.52)Al(0.48)As layers to suppress the propagation of threading dislocations to the surface. The typical common emitter gain in 50 x 50 micron-squared emitter area devices was 50, with a maximum of 63, at a collector current density of 2000 A/sq cm.

  4. Magnetic properties of Fe0.4Mn0.6/Co2FeAl bilayers grown on GaAs by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Meng, K. K.; Nie, S. H.; Yu, X. Z.; Wang, S. L.; Zhao, J. H.; Yan, W. S.

    2011-01-01

    Polycrystalline Fe 0.4 Mn 0.6 layers with the different thickness are deposited on 4-nm-thick single-crystalline Co 2 FeAl layers, which are grown on GaAs (001) substrates at room temperature by molecular-beam epitaxy. Both the exchange bias and the in-plane magnetic anisotropies of the bilayers are strongly dependent on the thickness of the Fe 0.4 Mn 0.6 layer. The former is described using a granular level model. A modified Stoner-Wohlfarth model is used to explain the in-plane magnetic anisotropies observed at 5 K, while one possible reason for the magnetic anisotropies measured at 300 K is the complex interfacial magnetic properties proved by x-ray magnetic circular dichroism measurements.

  5. Disruption of Higher Order DNA Structures in Friedreich's Ataxia (GAA)(n) Repeats by PNA or LNA Targeting

    DEFF Research Database (Denmark)

    Bergquist, Helen; Rocha, Cristina S. J.; Alvarez-Asencio, Ruben

    2016-01-01

    Expansion of (GAA)n repeats in the first intron of the Frataxin gene is associated with reduced mRNA and protein levels and the development of Friedreich’s ataxia. (GAA)n expansions form non-canonical structures, including intramolecular triplex (H-DNA), and R-loops and are associated with epigen...

  6. Impact of the substrate misorientation and its preliminary etching on the structural and optical properties of integrated GaAs/Si MOCVD heterostructures

    Science.gov (United States)

    Seredin, P. V.; Lenshin, A. S.; Zolotukhin, D. S.; Arsentyev, I. N.; Zhabotinskiy, A. V.; Nikolaev, D. N.

    2018-03-01

    This is the first attempt to make a report regarding the control of the structural and optical functional characteristics of integrated GaAs/Si heterostructures owing to the employment of preliminary etched misoriented Si substrates. The epitaxial GaAs layer on silicon substrates with no formation of the antiphase domains can be grown using substrates deviating less than 4°-6° from the singular (100) plane or without the use of a transition layer of GaAs nano-stakes. Preliminary etching of the Si substrate made it easier to acquire an epitaxial GaAs film in a single-crystalline state with a significantly less relaxation factor MOCVD, which positively influences on the structural performance of the film. These data agree with the results of Infrared reflection spectroscopy as well as Photoluminescence and UV-Vis spectroscopy. The optical properties of the integrated GaAs/Si (100) heterostructures in the IR and UV spectral regions were also identified by means of the relaxation coefficients.

  7. Optimization of the GaAs et GaAs/Si annealing using halogen lamp flashes

    International Nuclear Information System (INIS)

    Blanck, H.

    1989-01-01

    The aim of the work is to check whether the flash annealing of GaAs and GaAs/Si, using halogen lamps, allows an improvement in the results obtained by usual methods. The electrical activation, defects behavior and results uniformity are studied. The results on the activation and diffusion of implanted impurities are shown to be equivalent to those obtained with classical annealing methods. However, residual impurities (or defects) diffusion phenomena are restrained by the flash annealing technique. The Hall effect cartographic measurements showed an improvement of the uniformity of the implanted coating surface resistance. Flash annealing is a suitable method for the Si activation in GaAs. It allows an improvement of the GaAs results obtained with standard techniques, as well as the formation, by means of ion implantation, of active zones in the GaAs/Si layers [fr

  8. GaAs Industry in Europe-Technologies, Trends and New Developments

    Science.gov (United States)

    Jung, Helmut; Blanck, Hervé; Bösch, Wolfgang; Mayock, Jim

    The GaAs industry has been growing immensely during recent years. This is mainly driven by the tremendous growth of the wireless communication market, which is still continuously growing. Additionally, an emerging mmW market with applications in automotive, defense and optoelectronics is further driving the demand for GaAs components. The two largest European GaAs fabrication companies, UMS and Filtronic are very well positioned to address the complete frequency range from 1GHz up to 100GHz for commercial, high volume low cost markets, as well as individual niche applications. An overview of the companies' structures, their processes and design capabilities and also their new product developments will be presented in this paper.

  9. Electronic structure of GaAs with InAs (001) monolayer

    International Nuclear Information System (INIS)

    Tit, N.; Peressi, M.

    1995-04-01

    The effect on the electronic structure of an InAs monomolecular plane inserted in bulk GaAs is investigated theoretically. The (InAs) 1 (GaAs) n (001) strained superlattice is studied via ab-initio self-consistent pseudopotential calculations. Both electrons and holes are localized nearby the inserted InAs monolayer, which therefore acts as a quantum well for all the charge carriers. The small thickness of the inserted InAs slab is responsible of high confinement energies for the charge carriers, and therefore the interband electron-heavy-hole transition energy is close to the energy gap of the bulk GaAs, in agreement with recent experimental data. (author). 18 refs, 4 figs

  10. Neutron-damaged GaAs detectors for use in a Compton spectrometer

    International Nuclear Information System (INIS)

    Kammeraad, J.E.; Sale, K.E.; Wang, C.L.; Baltrusaitis, R.M.

    1992-01-01

    Detectors made of GaAs are being studies for use on the focal plane of a Compton spectrometer which measures 1-MeV to 25-MeV gamma rays with high energy resolution (1% or 100 keV, whichever is greater) and 200-ps time resolution. The detectors are GaAs chips that have been neutron-damaged to improve the time response. The detectors will be used to measure fast transient signals in the current mode. The properties of various GaAs detector configurations are being studied by bombarding sample detectors with short pulses of 4-MeV to 16-MeV electrons at the Linac Facility at EG ampersand G Energy Measurements, Inc., Santa Barbara Operations. Measurements of detector sensitivity and impulse response versus detector bias, thickness, and electron beam energy and intensity have been performed and are presented. 5 refs

  11. Origin of Fermi-level pinning at GaAs surfaces and interfaces

    Science.gov (United States)

    Colleoni, Davide; Miceli, Giacomo; Pasquarello, Alfredo

    2014-12-01

    Through first-principles simulation methods, we assign the origin of Fermi-level pinning at GaAs surfaces and interfaces to the bistability between the As-As dimer and two As dangling bonds, which transform into each other upon charge trapping. This defect is shown to be naturally formed both at GaAs surfaces upon oxygen deposition and in the near-interface substoichiometric oxide. Using electron-counting arguments, we infer that the identified defect occurs in opposite charge states. The Fermi-level pinning then results from the amphoteric nature of this defect which drives the Fermi level to its defect level. These results account for the experimental characterization at both GaAs surfaces and interfaces within a unified picture, wherein the role of As antisites is elucidated.

  12. A GaAs DETECTOR FOR DARK MATTER AND SOLAR NEUTRINO RESEARCH

    Energy Technology Data Exchange (ETDEWEB)

    T. BOWLES; ET AL

    2000-08-01

    The ability to produce large GaAs crystals with the requisite electronic properties to be fabricated into charged particle and photon detectors would provide a detector medium that would find numerous applications in both applied and fundamental research. Various applications would likely include x-ray detectors on satellites, environmental monitoring, medical imaging, bore hole mining spectroscopy, searches for dark matter, and solar neutrino research. We have carried out the development of GaAs detectors using two commercial crystal growing techniques. We have shown it should be able to grow detectors with 20 cm{sup 2} area and a depletion depth of 1 mm. Detectors of this size would find immediate applications in high-resolution, room temperature, low energy gamma ray measurements. We have also arrived at an understanding of the limitations of the common techniques used to grow GaAs and have determined that it should be possible to produce larger detectors using proprietary methods.

  13. GaAs quantum dots in a GaP nanowire photodetector

    Science.gov (United States)

    Kuyanov, P.; McNamee, S. A.; LaPierre, R. R.

    2018-03-01

    We report the structural, optical and electrical properties of GaAs quantum dots (QDs) embedded along GaP nanowires. The GaP nanowires contained p–i–n junctions with 15 consecutively grown GaAs QDs within the intrinsic region. The nanowires were grown by molecular beam epitaxy using the self-assisted vapor–liquid–solid process. The crystal structure of the NWs alternated between twinned ZB and WZ as the composition along the NW alternated between the GaP barriers and the GaAs QDs, respectively, leading to a polytypic structure with a periodic modulation of the NW sidewall facets. Photodetector devices containing QDs showed absorption beyond the bandgap of GaP in comparison to nanowires without QDs. Voltage-dependent measurements suggested a field emission process of carriers from the QDs.

  14. Si and gaas pixel detectors for medical imaging applications

    International Nuclear Information System (INIS)

    Bisogni, M. G.

    2001-01-01

    As the use of digital radiographic equipment in the morphological imaging field is becoming the more and more diffuse, the research of new and more performing devices from public institutions and industrial companies is in constant progress. Most of these devices are based on solid-state detectors as X-ray sensors. Semiconductor pixel detectors, originally developed in the high energy physics environment, have been then proposed as digital detector for medical imaging applications. In this paper a digital single photon counting device, based on silicon and GaAs pixel detector, is presented. The detector is a thin slab of semiconductor crystal where an array of 64 by 64 square pixels, 170- m side, has been built on one side. The data read-out is performed by a VLSI integrated circuit named Photon Counting Chip (PCC), developed within the MEDIPIX collaboration. Each chip cell geometrically matches the sensor pixel. It contains a charge preamplifier, a threshold comparator and a 15 bits pseudo-random counter and it is coupled to the detector by means of bump bonding. Most important advantages of such system, with respect to a traditional X-rays film/screen device, are the wider linear dynamic range (3x104) and the higher performance in terms of MTF and DQE. Besides the single photon counting architecture allows to detect image contrasts lower than 3%. Electronics read-out performance as well as imaging capabilities of the digital device will be presented. Images of mammographic phantoms acquired with a standard Mammographic tube will be compared with radiographs obtained with traditional film/screen systems

  15. Theoretical utmost performance of the (1 0 0) long-wave HgCdTe Auger suppressed photodetectors grown on GaAs

    Science.gov (United States)

    Martyniuk, P.; Gawron, W.; Madejczyk, P.; Rogalski, A.

    2017-08-01

    The vast majority of HgCdTe detectors designed to detect long wavelength (8-14 μm) infrared radiation must be cooled to achieve the required performance. It must be stressed that cooling requirement is both expensive and bulky and the main objective is to reach higher operating temperature condition preserving near background limited performance and high speed response. In order to reach that goal the thermal generation rate needs to be reduced below the photon generation rate. Except Auger 7, p-type HgCdTe active layers are mostly limited by technology dependent Shockley-Read-Hall generation-recombination processes. One of the ways to reduce of the trap density is a growth of the (1 0 0) HgCdTe epilayers on GaAs substrates. In addition, that orientation allows reaching lower carrier concentration in comparison to the commonly used (1 1 1) orientation (5 × 1015-1016 cm-3). In this paper we report on theoretical utmost performance of (1 0 0) HgCdTe Auger suppressed photodetectors grown on GaAs substrates. (1 0 0) HgCdTe orientation allows to reduce p-type doping to the level of ∼5 × 1014 cm-3 in analyzed long wavelength range. In addition Shockley-Read-Hall traps could be reduced to the level of ∼4.4 × 108 cm-3 resulting in suppression of the dark current by nearly two orders of magnitude within the range ∼20 ÷ 0.31 A/cm2 and detectivity, ∼1010-1011 cmHz1/2/W at temperature 230 K, voltage 200 mV.

  16. GaAs radiovoltaic cell enhanced by Y{sub 2}SiO{sub 5} crystal for the development of new gamma microbatteries

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zheng-Rong [Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, 29 General Road, Jiangning District, Nanjing 211106 (China); Tang, Xiao-Bin, E-mail: tangxiaobin@nuaa.edu.cn [Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, 29 General Road, Jiangning District, Nanjing 211106 (China); Jiangsu Key Laboratory of Material and Technology for Energy Conversion, Nanjing 211106 (China); Liu, Yun-Peng [Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, 29 General Road, Jiangning District, Nanjing 211106 (China); Jiangsu Key Laboratory of Material and Technology for Energy Conversion, Nanjing 211106 (China); Xu, Zhi-Heng; Yuan, Zi-Cheng; Liu, Kai; Chen, Wang [Department of Nuclear Science and Engineering, Nanjing University of Aeronautics and Astronautics, 29 General Road, Jiangning District, Nanjing 211106 (China)

    2017-05-01

    Highlights: • A new gamma/GaAs multi-level structure radiovoltaic microbattery is proposed. • The properties of the new GaAs/YSO radiovoltaic cell was discussed. • The cell with Y{sub 2}SiO{sub 5} crystal can provide higher power and current output. • The irradiation resistance of Y{sub 2}SiO{sub 5} crystal under X-ray excitation was studied. - Abstract: The design of a new gamma/GaAs multi-level structure radiovoltaic microbattery enhanced by an Y{sub 2}SiO{sub 5} (YSO) crystal is proposed. By introducing the YSO crystal in the GaAs radiovoltaic cell, the output power from the cell was significantly improved. We focus on the enhancement mechanisms of performance output in one level of a multi-level structure. The radioluminescence spectra of the YSO crystal revealed its fluorescence in the wavelength range of approximately 300–700 nm. Light at the exact wavelength would normally be totally absorbed by the GaAs photovoltaic material. The radiovoltaic cells were tested using an X-ray tube to simulate the gamma rays emitted by a gamma-radioactive source. Experimental investigation showed that the YSO crystal can increase the cell output power. The output power of the new GaAs/YSO radiovoltaic cell was enhanced by more than four times compared to that of the conventional GaAs radiovoltaic cell. In addition, considering the importance of the YSO crystal in the new GaAs/YSO radiovoltaic cell, the irradiation resistance of the YSO crystal under X-ray excitation was also analysed.

  17. Correlation between tetragonal zinc-blende structure and magnetocrystalline anisotropy of MnGa epilayers on GaAs(111)

    Energy Technology Data Exchange (ETDEWEB)

    Arins, A.W.; Jurca, H.F. [Laboratório de Superfícies e Interfaces, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990 Curitiba, Paraná (Brazil); Zarpellon, J. [Laboratório de Superfícies e Interfaces, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990 Curitiba, Paraná (Brazil); Universidade Estadual do Centro-Oeste-Campus Irati, PR 153km 7, CEP 84500-000, Irati, Paraná (Brazil); Fabrim, Z.E.; Fichtner, P.F.P. [Departamento de Metalurgia e Laboratório de Implantação Iônica-Universidade Federal do Rio Grande do Sul, Caixa Postal 15051, 91501-970 Porto Alegre, RS (Brazil); Varalda, J; Schreiner, W.H.; Mosca, D.H [Laboratório de Superfícies e Interfaces, Universidade Federal do Paraná, Caixa Postal 19044, 81531-990 Curitiba, Paraná (Brazil)

    2015-05-01

    MnGa films of few nanometer thickness with tetragonal zinc-blende (TZB) structure were grown by molecular beam epitaxy on GaAs(111) substrates. These ultrathin films have high magnetization at room temperature with magnetic moment as high as 3.2 μ{sub B} per formula unit. A strong magnetocrystalline anisotropy energy (MAE) comparable to that reported to δ-MnGa films with body-centered tetragonal (BCT) structure with similar c/a=1.1 is observed. Electronic structure calculations using density functional theory (DFT) reveal a robust ferrimagnetic ground state at room temperature and confirm that zinc-blende structure with tetragonal distortion has a metastable character. The strong MAE is associated with anisotropy of orbital magnetic moment which is described by the symmetry of the spin-polarized charge density along the crystallographic axes. - Highlights: • MnGa epilayers with tetragonal zinc-blende structure were grown. • Density functional theory calculations reveal a robust ferrimagnetic ground state at room temperature. • Substantial magnetocrystalline anisotropy is associated with the symmetry of the spin-polarized charge density of Mn 4d sites. • MnGa alloy films are promising for spintronics applications.

  18. Electrical properties of Ga ion beam implanted GaAs epilayer

    International Nuclear Information System (INIS)

    Hirayama, Yoshiro; Okamoto, Hiroshi

    1985-01-01

    Resistivity enhancement by 5 orders or more was realized by Ga focused ion beam implantation into n + and p + GaAs epilayers. For originally n + epilayers, this resistivity enhancement is maintained after annealing as high as 800 deg C. However this enhancement disappears after annealing at above 650 deg C for p + epilayer. This property makes GaAs high resistive only in a limited area whose minimum dimension is 0.1 μm or less, and is attractive for a device fabrication process to electrically isolate integrated elements. (author)

  19. Investigation of the radiation hardness of GaAs sensors in an electron beam

    CERN Document Server

    K. Afanaciev, K; P. Bernitt, P; G. Chelkov, G; J. Gajewski, J; M. Gostkin, M; Ch Grah, Ch; R. Heller, R; H. Henschel, H; A. Ignatenko, A; Z. Krumshteyn, Z; S. Kulis, S; W. Lange, W; W. Lohmann, W; D. Mokeev, D; V. Novikov, V; M. Ohlerich, M; A. Rosca, A; A. Sapronov, A; R.S. Schmidt, R S; S. Schuwalow, S; O. Tolbanov, O; A. Tyazhev, A

    2012-01-01

    A compact and finely grained sandwich calorimeter is designed to instrument the very forward region of a detector at a future e+e− collider. The calorimeter will be exposed to low energy e+e− pairs originating from beamstrahlung, resulting in absorbed doses of about one MGy per year. GaAs pad sensors interleaved with tungsten absorber plates are considered as an option for this calorimeter. Several Cr-doped GaAs sensor prototypes were produced and irradiated with 8.5–10 MeV electrons up to a dose of 1.5 MGy. The sensor performance was measured as a function of the absorbed dose.

  20. Dual-loss modulated Nd:GGG laser with Cr4+:YAG and GaAs

    Science.gov (United States)

    Qiao, Junpeng; Zhao, Jia; Li, Yufei; Zhao, Shengzhi; Yang, Kejian; Li, Guiqiu; Li, Dechun; Qiao, Wenchao; Li, Tao; Chu, Hongwei

    2014-12-01

    We demonstrate a diode-pumped dual-loss passively Q-switched and mode-locked (DP-QML) Nd:GGG laser by simultaneously employing Cr4+:YAG and GaAs as saturable absorbers. In comparison with single passively Q-switched and mode-locked (SP-QML) Nd:GGG laser with the Cr4+:YAG or GaAs, the maximum pulse width compression and the highest peak power improvement are 76.8% and 18.5 times in DP-QML laser, with the value of 67 ns and 2.9 kW, respectively.