Sample records for ultralow doping concentrations
-
Block, Linda; Jörneberg, Per; Björklund, Ulrika; Westerlund, Anna; Biber, Björn; Hansson, Elisabeth
2013-01-01
Bupivacaine is a widely used, local anesthetic agent that blocks voltage-gated Na+ channels when used for neuro-axial blockades. Much lower concentrations of bupivacaine than in normal clinical use, bupivacaine exerts an influence on the Ca2+ signaling and interleukin-1β (IL-1β) secretion in inflammation-reactive astrocytes when used at ultralow concentrations, bupivacaine interacts with the opioid-, 5-hydroxytryptamine- (5-HT) and glutamate-receptor systems. With respect to the μ-opioid- and 5-HT-receptor systems, bupivacaine restored the inflammation-reactive astrocytes to their normal non-inflammatory levels. With respect to the glutamate-receptor system, bupivacaine, in combination with an ultralow concentration of the μ-opioid receptor antagonist naloxone and μ-opioid receptor agonists, restored the inflammation-reactive astrocytes to their normal non-inflammatory levels. Ultralow concentrations of bupivacaine attenuated the inflammation-induced upregulation of IL-1β secretion. The results indicate that bupivacaine interacts with the opioid-, 5-HT- and glutamate-receptor systems by affecting Ca2+ signaling and IL-1β release in inflammation-reactive astrocytes. These results suggest that bupivacaine may be used at ultralow concentrations as an anti-inflammatory drug, either alone or in combination with opioid agonists and ultralow concentrations of an opioid antagonist. PMID:24083665
-
The chemistry of ultra-low concentrations
International Nuclear Information System (INIS)
Vertes, Attila; Kiss, Istvan
1987-01-01
Methods for the separation and enrichment of radionuclides in the ultra-low concentration range (coprecipitation, adsorption of radioactive substances on crystals) are disscussed in this chapter of the textbook. The properties and behaviour of ultra-dilute solutions, radiocolloids and the electrochemistry of ultra-dilute solution are also overviewed
-
Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon
2016-06-09
We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.
-
Advanced 65 nm CMOS devices fabricated using ultra-low energy plasma doping
International Nuclear Information System (INIS)
Walther, S.; Lenoble, D.; Lallement, F.; Grouillet, A.; Erokhin, Y.; Singh, V.; Testoni, A.
2005-01-01
For leading edge CMOS and DRAM technologies, plasma doping (PLAD) offers several unique advantages over conventional beamline implantation. For ultra-low energy source and drain extensions (SDE), source drain contact and high dose poly doping implants PLAD delivers 2-5x higher throughput compared to beamline implanters. In this work we demonstrate process performance and process integration benefits enabled by plasma doping for advanced 65 nm CMOS devices. Specifically, p + /n ultra-shallow junctions formed with BF 3 plasma doping have superior X j /R s characteristics to beamline implants and yield up to 30% lower R s for 20 nm X j while using standard spike anneal with ramp-up rate of 75 deg. C/s. These results indicate that PLAD could extend applicability of standard spike anneal by at least one technology node past 65 nm. A CMOS split lot has been run to investigate process integration advantages unique to plasma doping and to determine CMOS device characteristics. Device data measured on 65 nm transistors fabricated with offset spacers indicate that devices with SDE formed by plasma doping have superior V t roll-off characteristics arguably due to improved lateral gate-overlap of PLAD SDE junctions. Furthermore, offset spacers could be eliminated in 65 nm devices with PLAD SDE implants while still achieving V t roll-off and I on -I off performance at least equivalent to control devices with offset spacers and SDE formed by beamline implantation. Thus, another advantage of PLAD is simplified 65 nm CMOS manufacturing process flow due to elimination of offset spacers. Finally, we present process transfer from beamline implants to PLAD for several applications, including SDE and gate poly doping with very high productivity
-
Shi, K. X.; Xu, H. Y.; Wang, Z. Q.; Zhao, X. N.; Liu, W. Z.; Ma, J. G.; Liu, Y. C.
2017-11-01
Resistive-switching memory with ultralow-power consumption is very promising technology for next-generation data storage and high-energy-efficiency neurosynaptic chips. Herein, Ta2O5-x-based multilevel memories with ultralow-power consumption and good data retention were achieved by simple Gd-doping. The introduction of a Gd ion, as an oxygen trapper, not only suppresses the generation of oxygen vacancy defects and greatly increases the Ta2O5-x resistance but also increases the oxygen-ion migration barrier. As a result, the memory cells can operate at an ultralow current of 1 μA with the extrapolated retention time of >10 years at 85 °C and the high switching speeds of 10 ns/40 ns for SET/RESET processes. The energy consumption of the device is as low as 60 fJ/bit, which is comparable to emerging ultralow-energy consumption (memory devices.
-
Ultra-low temperature curable nano-silver conductive adhesive for piezoelectric composite material
Yan, Chao; Liao, Qingwei; Zhou, Xingli; Wang, Likun; Zhong, Chao; Zhang, Di
2018-01-01
Limited by the low thermal resistance of composite material, ultra-low temperature curable conductive silver adhesive with curing temperature less than 100 °C needed urgently for the surface conduction treatment of piezoelectric composite material. An ultra-low temperature curable nano-silver conductive adhesive with high adhesion strength for the applications of piezoelectric composite material was investigated. The crystal structure of cured adhesive, SEM/EDS analysis, thermal analysis, adhesive properties and conductive properties of different content of nano-silver filler or micron-silver doping samples were studied. The results show that with 60 wt.% nano-silver filler the ultra-low temperature curable conductive silver adhesive had the relatively good conductivity as volume resistivity of 2.37 × 10-4 Ω cm, and good adhesion strength of 5.13 MPa. Minor micron-doping (below 15 wt.%) could improve conductivity, but would decrease other properties. The ultra-low temperature curable nano-silver conductive adhesive could successfully applied to piezoelectric composite material.
-
Hong, Seung Sae; Cha, Judy J.; Kong, Desheng; Cui, Yi
2012-01-01
A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.
-
Hong, Seung Sae
2012-03-27
A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.
-
Frustrated incomplete donor ionization in ultra-low resistivity germanium films
International Nuclear Information System (INIS)
Xu, Chi; Menéndez, J.; Senaratne, C. L.; Kouvetakis, J.
2014-01-01
The relationship between carrier concentration and donor atomic concentration has been determined in n-type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by using specially designed P(SiH 3 ) 3 and P(GeH 3 ) 3 hydride precursors. The in situ nature of the doping and the growth at low temperatures, facilitated by the Ge 3 H 8 and Ge 4 H 10 Ge sources, promote the creation of ultra-low resistivity films with flat doping profiles that help reduce the errors in the concentration measurements. The results show that Ge deviates strongly from the incomplete ionization expected when the donor atomic concentration exceeds N d = 10 17 cm −3 , at which the energy separation between the donor and Fermi levels ceases to be much larger than the thermal energy. Instead, essentially full ionization is seen even at the highest doping levels beyond the solubility limit of P in Ge. The results can be explained using a model developed for silicon by Altermatt and coworkers, provided the relevant model parameter is properly scaled. The findings confirm that donor solubility and/or defect formation, not incomplete ionization, are the major factors limiting the achievement of very high carrier concentrations in n-type Ge. The commercially viable chemistry approach applied here enables fabrication of supersaturated and fully ionized prototypes with potential for broad applications in group-IV semiconductor technologies
-
Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals
Peng, Wei
2017-06-28
Unintentional self-doping in semiconductors through shallow defects is detrimental to optoelectronic device performance. It adversely affects junction properties and it introduces electronic noise. This is especially acute for solution-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders of magnitude lower than those of typical three-dimensional hybrid perovskites—by analyzing their conductivity behavior. We propose that crystallization of hybrid perovskites containing large organic cations suppresses defect formation and thus favors a low self-doping level. To exemplify the benefits of this effect, we demonstrate extraordinarily high light-detectivity (1013 Jones) in (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 photoconductors due to the reduced electronic noise, which makes them particularly attractive for the detection of weak light signals. Furthermore, the low self-doping concentration reduces the equilibrium charge carrier concentration in (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1, advantageous in the design of p-i-n heterojunction solar cells by optimizing band alignment and promoting carrier depletion in the intrinsic perovskite layer, thereby enhancing charge extraction.
-
Kosović, Marin; Balarin, Maja; Ivanda, Mile; Đerek, Vedran; Marciuš, Marijan; Ristić, Mira; Gamulin, Ozren
2015-12-01
Microporous and macro-mesoporous silicon templates for surface-enhanced Raman scattering (SERS) substrates were produced by anodization of low doped p-type silicon wafers. By immersion plating in AgNO3, the templates were covered with silver metallic film consisting of different silver nanostructures. Scanning electron microscopy (SEM) micrographs of these SERS substrates showed diverse morphology with significant difference in an average size and size distribution of silver nanoparticles. Ultraviolet-visible-near-infrared (UV-Vis-NIR) reflection spectroscopy showed plasmonic absorption at 398 and 469 nm, which is in accordance with the SEM findings. The activity of the SERS substrates was tested using rhodamine 6G (R6G) dye molecules and 514.5 nm laser excitation. Contrary to the microporous silicon template, the SERS substrate prepared from macro-mesoporous silicon template showed significantly broader size distribution of irregular silver nanoparticles as well as localized surface plasmon resonance closer to excitation laser wavelength. Such silver morphology has high SERS sensitivity that enables ultralow concentration detection of R6G dye molecules up to 10(-15) M. To our knowledge, this is the lowest concentration detected of R6G dye molecules on porous silicon-based SERS substrates, which might even indicate possible single molecule detection.
-
International Nuclear Information System (INIS)
Giovanni, Marcella; Yue, Junqi; Zhang, Lifeng; Xie, Jianping; Ong, Choon Nam; Leong, David Tai
2015-01-01
Highlights: • Ultralow levels of common nanoparticles exist in environment and consumer products. • Common nanoparticles at ultralow levels induce mild pro-inflammation by macrophages. • The nanoparticles are cytotoxic only at high doses. - Abstract: To cellular systems, nanoparticles are considered as foreign particles. Upon particles and cells contact, innate immune system responds by activating the inflammatory pathway. However, excessive inflammation had been linked to various diseases ranging from allergic responses to cancer. Common nanoparticles, namely silver, titanium dioxide, and zinc oxide exist in the environment as well as in consumer products at ultralow level of 10 −6 –10 −3 μg mL −1 . However, so far the risks of such low NPs concentrations remain unexplored. Therefore, we attempted to screen the pro-inflammatory responses after ultralow concentration treatments of the three nanoparticles on RAW264.7 macrophages, which are a part of the immune system, at both cellular and gene levels. Even though cytotoxicity was only observed at nanoparticles concentrations as high as 10 μg mL −1 , through the level of NF-κB and upregulation of pro-inflammatory genes, we observed activation of the induction of genes encoding pro-inflammatory cytokines starting already at 10 −7 μg mL −1 . This calls for more thorough characterization of nanoparticles in the environment as well as in consumer products to ascertain the health and safety of the consumers and living systems in general
-
Energy Technology Data Exchange (ETDEWEB)
Giovanni, Marcella [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117585 (Singapore); Yue, Junqi; Zhang, Lifeng [PUB, 40 Scotts Road, Singapore 228231 (Singapore); Xie, Jianping [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117585 (Singapore); Ong, Choon Nam [Saw Swee Hock School of Public Health, National University of Singapore, 12 Science Drive 2, Singapore 117549 (Singapore); NUS Environmental Research Institute, National University of Singapore, 5A Engineering Drive 1, Singapore 117411 (Singapore); Leong, David Tai, E-mail: cheltwd@nus.edu.sg [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117585 (Singapore)
2015-10-30
Highlights: • Ultralow levels of common nanoparticles exist in environment and consumer products. • Common nanoparticles at ultralow levels induce mild pro-inflammation by macrophages. • The nanoparticles are cytotoxic only at high doses. - Abstract: To cellular systems, nanoparticles are considered as foreign particles. Upon particles and cells contact, innate immune system responds by activating the inflammatory pathway. However, excessive inflammation had been linked to various diseases ranging from allergic responses to cancer. Common nanoparticles, namely silver, titanium dioxide, and zinc oxide exist in the environment as well as in consumer products at ultralow level of 10{sup −6}–10{sup −3} μg mL{sup −1}. However, so far the risks of such low NPs concentrations remain unexplored. Therefore, we attempted to screen the pro-inflammatory responses after ultralow concentration treatments of the three nanoparticles on RAW264.7 macrophages, which are a part of the immune system, at both cellular and gene levels. Even though cytotoxicity was only observed at nanoparticles concentrations as high as 10 μg mL{sup −1}, through the level of NF-κB and upregulation of pro-inflammatory genes, we observed activation of the induction of genes encoding pro-inflammatory cytokines starting already at 10{sup −7} μg mL{sup −1}. This calls for more thorough characterization of nanoparticles in the environment as well as in consumer products to ascertain the health and safety of the consumers and living systems in general.
-
Zhao, Bing; Yang, Yaqing; Wang, Zhixuan; Huang, Shoushuang; Wang, Yanyan; Wang, Shanshan; Chen, Zhiwen; Jiang, Yong
2018-02-01
SnS is widely studied as anode materials since of its superior structural stability and physicochemical property comparing with other Sn-based composites. Nevertheless, the inconvenience of phase morphology control and excessive consumption of sulfur sources during synthesis hinder the scalable application of SnS nanocomposites. Herein, we report a facile in-situ sulfuration strategy to synthesize sandwiched spherical SnS/sulfur-doped graphene (SnS/S-SG) composite. An ultra-low sulfur content with approximately stoichiometric ratio of Sn:S can effectively promote the sulfuration reaction of SnO2 to SnS and simultaneous sulfur-doping of graphene. The as-prepared SnS/S-SG composite shows a three-dimensional interconnected spherical structure as a whole, in which SnS nanoparticles are sandwiched between the multilayers of graphene sheets forming a hollow sphere. The sandwiched sphere structure and high S doping amount can improve the binding force between SnS and graphene, as well as the structural stability and electrical conductivity of the composite. Thus, a high reversibility of conversion reaction, promising specific capacity (772 mAh g-1 after 100 cycles at 0.1 C) and excellent rate performance (705 and 411 mAh g-1 at 1 C and 10 C, respectively) are exhibited in the SnS/S-SG electrode, which are much higher than that of the SnS/spherical graphene synthesized by traditional post-sulfuration method.
-
Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals
Peng, Wei; Yin, Jun; Ho, Kang-Ting; Ouellette, Olivier; de Bastiani, Michele; Banavoth, Murali; El Tall, Omar; Shen, Chao; Miao, Xiaohe; Pan, Jun; Alarousu, Erkki; He, Jr-Hau; Ooi, Boon S.; Mohammed, Omar F.; Sargent, Edward H.; Bakr, Osman
2017-01-01
-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4･(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders
-
Zero-reabsorption doped-nanocrystal luminescent solar concentrators.
Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L
2014-04-22
Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.
-
Energy Technology Data Exchange (ETDEWEB)
Jiang Baojiang [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Tian Chungui; Wang Lei; Sun Li; Chen Chen; Nong Xiaozhen [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Qiao Yingjie, E-mail: qiaoyingjie@hrbeu.edu.cn [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Fu Honggang, E-mail: fuhg@vip.sina.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China)
2012-02-01
In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 Degree-Sign C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.
-
Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang
2012-02-01
In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.
-
Stimulatory and protective effects of alkylating agents applied in ultra-low concentrations.
Pukhalsky, A L; Shmarina, G V
2001-01-01
Alkylating drugs belonging to the nitrogen mustard family are known as cytostatic and immunosuppressive agents. Ultra-low doses of these drugs may demonstrate pharmacological effects unlike this category of drugs. In the case of a gradual dose decrease, the number of targets for alkylation is also reduced and the drug switches from cytostatic to cell growth modifier. We postulate that application of ultra-low doses of alkylating drugs may result in a beneficial effect in the therapy of diseases associated with chronic inflammation of the mucosa, especially with the signs of epithelial atrophy. Copyright 2001 S. Karger AG, Basel
-
International Nuclear Information System (INIS)
Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rusop, Mohamad; Rahman, S. A.
2016-01-01
This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10"3 Ωcm"−"1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.
-
Energy Technology Data Exchange (ETDEWEB)
Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)
2016-07-06
This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.
-
Wu, Ruixiang; Chen, Ruiyun; Zhou, Haitao; Qin, Yaqiang; Zhang, Guofeng; Qin, Chengbing; Gao, Yan; Gao, Yajun; Xiao, Liantuan; Jia, Suotang
2018-01-01
We present a sensitive method for detection of ultra-low oxygen concentrations based on the fluorescence blinking dynamics of single molecules. The relationship between the oxygen concentration and the fraction of time spent in the off-state, stemming from the population and depopulation of triplet states and radical cationic states, can be fitted with a two-site quenching model in the Stern-Volmer plot. The oxygen sensitivity is up to 43.42 kPa-1 in the oxygen partial pressure region as low as 0.01-0.25 kPa, which is seven times higher than that of the fluorescence intensity indicator. This method avoids the limitation of the sharp and non-ignorable fluctuations that occur during the measurement of fluorescence intensity, providing potential applications in the field of low oxygen-concentration monitoring in life science and industry.
-
The doping concentration and physical properties measurement of silicon water using tera hertz wave
International Nuclear Information System (INIS)
Park, Sung Hyeon; Oh, Gyung Hwan; Kim, Hak Sung
2017-01-01
In this study, a tera hertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30° were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 10"1"4 to 10"1"8 in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer
-
The doping concentration and physical properties measurement of silicon water using tera hertz wave
Energy Technology Data Exchange (ETDEWEB)
Park, Sung Hyeon; Oh, Gyung Hwan; Kim, Hak Sung [Dept. of Mechanical Convergence Engineering, Hanyang University, Seoul(Korea, Republic of)
2017-02-15
In this study, a tera hertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30° were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 10{sup 14} to 10{sup 18} in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer.
-
DEFF Research Database (Denmark)
Fernandez, Santiago Martin; Li, Qingfeng; Jensen, Jens Oluf
2015-01-01
Membrane electrode assemblies (MEAs) with ultra-low Pt loading electrodes were prepared for high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs) based on acid doped polybenzimidazole. With no electrode binders or ionomers, the triple phase boundary of the catalyst layer was establ......Membrane electrode assemblies (MEAs) with ultra-low Pt loading electrodes were prepared for high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs) based on acid doped polybenzimidazole. With no electrode binders or ionomers, the triple phase boundary of the catalyst layer...
-
Suppression of concentration quenching of Er-related luminescence in Er-doped GaN
International Nuclear Information System (INIS)
Chen Shaoqiang; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro; Dierre, Benjamin; Lee, Woong; Sekiguchi, Takashi
2010-01-01
Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.
-
Directory of Open Access Journals (Sweden)
Manjula N.
2015-12-01
Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.
-
Using MOF-74 for Hg2+ removal from ultra-low concentration aqueous solution
International Nuclear Information System (INIS)
Xiong, Yang Yang; Li, Jian Qiang; Gong, Le Le; Feng, Xue Feng; Meng, Li Na; Zhang, Le; Meng, Pan Pan; Luo, Ming Biao; Luo, Feng
2017-01-01
Mercury (Hg 2+ ) ions have very high toxicity and widely spread as environmental pollutants. At present, many efforts have been taken to remove the hazardous materials of mercury(II) by adsorption, and it is highly desirable to develop a novel adsorbent with high adsorptive capacities. However it is still a big challenge to remove the ultra-low-concentration mercury ions from water. In this paper, MOF-74-Zn is explored for such function, showing high removal rate of Hg(II) from water without any pretreatment, especially for the ultra-trace Hg(II) ions in the ppb magnitude with the removal rate reaching to 54.48%, 69.71%, 72.26% when the initial concentration of Hg(II) is 20ppb, 40ppb, 50ppb, respectively. - Graphical abstract: The absorption of mercury ions on MOF-74-Zn is due to somewhat weak interactions between MOF skeleton that is composed of carboxylate and hydroxy group and Hg2+ ions. - Highlights: • MOF-74-Zn shows high removal rate of Hg(II) from water without any pretreatment. • The MOF-74-Zn has a notable performance at ultra-low concentration of Hg(II). • MOF-74-Zn shows the potential for Hg(II) removal from industrial waste water.
-
Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen
2016-11-22
The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La 3+ donor-doped, Fe 3+ acceptor-doped and La 3+ /Fe 3+ -co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.
-
Directory of Open Access Journals (Sweden)
Christoph Slouka
2016-11-01
Full Text Available The different properties of acceptor-doped (hard and donor-doped (soft lead zirconate titanate (PZT ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.
-
The effect of DCJTB doping concentration in PVK on the chromatic coordinate of electroluminescence
Energy Technology Data Exchange (ETDEWEB)
Zhang, F J; Xu, Z; Zhao, S L; Wang, L W; Yuan, G C [Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education (China); Zhao, D W [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)], E-mail: fjzhang@bjtu.edu.cn
2008-05-15
The dominant mechanism of electroluminescence (EL) from 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) doped in poly-(N-vinyl-carbazole) (PVK) system was demonstrated to be a charge carrier trapped by DCJTB molecular rather than Foerster energy transfer from PVK to DCJTB. The chromatically coordinate EL emission of PVK:DCJTB changes from (0.41, 0.31) to (0.67, 0.31) with an increase in DCJTB doping concentration. The emission peak in DCJTB shows red-shift and the shoulder emission peak at 656 nm becomes stronger as the doping concentration increases. The effect of DCJTB doping concentration on EL spectra is attributed to strong dipole-dipole interaction between the DCJTB molecule with an increase in doping concentration.
-
Concentration quenching in Nd-doped glasses
International Nuclear Information System (INIS)
Stokowski, S.E.; Cook, L.; Mueller, H.; Weber, M.J.
1984-01-01
Fluorescence from trivalent Nd in solids is unfortunately quenched by interactions between Nd ions. Thus, laser materials with high Nd concentrations have reduced efficiencies because of this self-quenching, also known as concentration quenching. Nd self-quenching in different crystals and glasses varies considerably. We are therefore investigating this effect in a large number of materials in an effort to: (1) find those materials with long Nd fluorescent lifetimes at high Nd concentrations; and (2) elucidate the basic mechanisms of quenching and how the material structure controls its magnitude. We have concentrated on Nd-doped glasses because they provide a rich variety of structures, albeit complicated by Nd site inhomogeneities, and are easily and quickly made
-
Diffuse Surface Scattering in the Plasmonic Resonances of Ultralow Electron Density Nanospheres.
Monreal, R Carmina; Antosiewicz, Tomasz J; Apell, S Peter
2015-05-21
Localized surface plasmon resonances (LSPRs) have recently been identified in extremely diluted electron systems obtained by doping semiconductor quantum dots. Here, we investigate the role that different surface effects, namely, electronic spill-out and diffuse surface scattering, play in the optical properties of these ultralow electron density nanosystems. Diffuse scattering originates from imperfections or roughness at a microscopic scale on the surface. Using an electromagnetic theory that describes this mechanism in conjunction with a dielectric function including the quantum size effect, we find that the LSPRs show an oscillatory behavior in both position and width for large particles and a strong blue shift in energy and an increased width for smaller radii, consistent with recent experimental results for photodoped ZnO nanocrystals. We thus show that the commonly ignored process of diffuse surface scattering is a more important mechanism affecting the plasmonic properties of ultralow electron density nanoparticles than the spill-out effect.
-
Effect of iron doping concentration on magnetic properties of ZnO nanoparticles
International Nuclear Information System (INIS)
Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.; Layek, Samar; Verma, H.C.
2009-01-01
The ZnO:Fe nanoparticles of mean size 3-10 nm were synthesized at room temperature by simple co-precipitation method. The crystallite structure, morphology and size estimation were performed by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM). The wurtzite structure of ZnO gradually degrades with the increasing Fe doping concentration. The magnetic behavior of the nanoparticles of ZnO with varying Fe doping concentration was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong ferromagnetic behavior, however at higher doping percentage of Fe, the ferromagnetic behavior was suppressed and paramagnetic nature was observed. The enhanced antiferromagnetic interaction between neighboring Fe-Fe ions suppressed the ferromagnetism at higher doping concentrations of Fe. Room-temperature Moessbauer spectroscopy investigation showed Fe 3+ nature of the iron atom in ZnO matrix.
-
Using MOF-74 for Hg{sup 2+} removal from ultra-low concentration aqueous solution
Energy Technology Data Exchange (ETDEWEB)
Xiong, Yang Yang; Li, Jian Qiang; Gong, Le Le; Feng, Xue Feng; Meng, Li Na; Zhang, Le; Meng, Pan Pan; Luo, Ming Biao; Luo, Feng, E-mail: ecitluofeng@163.com
2017-02-15
Mercury (Hg{sup 2+}) ions have very high toxicity and widely spread as environmental pollutants. At present, many efforts have been taken to remove the hazardous materials of mercury(II) by adsorption, and it is highly desirable to develop a novel adsorbent with high adsorptive capacities. However it is still a big challenge to remove the ultra-low-concentration mercury ions from water. In this paper, MOF-74-Zn is explored for such function, showing high removal rate of Hg(II) from water without any pretreatment, especially for the ultra-trace Hg(II) ions in the ppb magnitude with the removal rate reaching to 54.48%, 69.71%, 72.26% when the initial concentration of Hg(II) is 20ppb, 40ppb, 50ppb, respectively. - Graphical abstract: The absorption of mercury ions on MOF-74-Zn is due to somewhat weak interactions between MOF skeleton that is composed of carboxylate and hydroxy group and Hg2+ ions. - Highlights: • MOF-74-Zn shows high removal rate of Hg(II) from water without any pretreatment. • The MOF-74-Zn has a notable performance at ultra-low concentration of Hg(II). • MOF-74-Zn shows the potential for Hg(II) removal from industrial waste water.
-
Effects of Zn doping concentration on resistive switching ...
Indian Academy of Sciences (India)
conduction mechanism at low resistance state varies with Zn doping concentration. The dominant .... shows the evolution of RHRS and RLRS in 1000 cycles under a reading voltage of 2 V ... 0.5 exhibited poor fatigue properties. As shown in ...
-
International Nuclear Information System (INIS)
Sakurai, Hirohisa
2006-01-01
The change of the concentration of 7 Be in air and 14 C in the tree ring, cosmogenic nuclide, was measured by the ultralow level radioactivity measurement method. The concentration of 14 C in the tree ring was changed by the intensity of cosmic ray in the past. Cosmic ray and cosmogenic nuclide, solar activity and change of cosmic ray intensity, the continuous measurement of 7 Be concentration in atmosphere, and measurement of 14 C concentration in the old tree ring are reported. 14 C concentration in tree ring is measured by the ultralow level liquid scintillation measuring system (Quantulus) and 14 C concentration in the tree ring of Japanese cedar at Akita and Murou was changed by nuclear tests in air. 14 C concentration of Chokaijindaisugi, cryptomeria, about 2500 years old, is changed periodically about 10.1 years as almost same as the sunspot activity cycle. (S.Y.)
-
Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer
Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.
2018-01-01
In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.
-
International Nuclear Information System (INIS)
Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han
2016-01-01
This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.
-
Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors
Directory of Open Access Journals (Sweden)
Xue Zhang
2017-07-01
Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.
-
Energy Technology Data Exchange (ETDEWEB)
Liu, Wei-wei, E-mail: zmliuwwliu@126.com; Chen, Hong-xia; Liu, Cheng-lin; Wang, Rong
2017-02-05
Effect of N doping concentration on the electronic structure of N-doped CuAlO{sub 2} was investigated by density functional theory based on generalized-gradient approximation plus orbital potential. Lattice parameters a and c both increase with increasing N-doping concentration. Formation energies increase with increasing N doping concentration and all N-doped CuAlO{sub 2} were structurally stable. The calculated band gaps for N-doped CuAlO{sub 2} narrowed compared to pure CuAlO{sub 2}, which was attributed to the stronger hybridization between Cu-3d and N-2p states and the downward shift of Cu-3p states in conduction bands. The higher the N-doping concentration is, the narrower the band gap. N-doped CuAlO{sub 2} shows a typical p-type semiconductor. The band structure changed from indirect to direct after N doping which will benefit the application of the CuAlO{sub 2} materials in optoelectronic and electronic devices. - Highlights: • Electronic structures of CuAlO{sub 2} with different N content were investigated. • The higher the N-doping concentration is, the narrower the band gap. • All the CuAlO{sub 2} with different N content were structurally stable. • The N-doped CuAlO{sub 2} shows a typical p-type semiconductor characteristic.
-
Optimum Er concentration for in situ doped GaN visible and infrared luminescence
International Nuclear Information System (INIS)
Lee, D. S.; Heikenfeld, J.; Steckl, A. J.; Hommerich, U.; Seo, J. T.; Braud, A.; Zavada, J.
2001-01-01
GaN thin films have been doped with varying Er concentrations (0.01--10 at.%) during molecular-beam-epitaxy growth. As expected, the visible and infrared (IR) emissions, from photoluminescence (PL) and electroluminescence (EL), are a strong function of Er concentration. We report on the determination of an optimum Er doping level for PL and EL intensity. Secondary ion mass spectroscopy and Rutherford backscattering measurements showed that the Er concentration in GaN increased exponentially with Er cell temperature. PL and EL intensity of green emission at 537 and 558 nm, due to Er 4f--4f inner shell transitions, exhibited a maximum at ∼1 at.% Er. IR PL intensity at 1.54 μm, due to another Er transition, revealed the same maximum for ∼1 at.% Er concentration. PL lifetime measurements at 537 nm showed that samples with Er concentration <1 at.% had a lifetime of ∼5 μs. For Er concentration ≥1 at.%, the lifetime decreased rapidly to values below 1 μs. This concentration quenching is believed to be due to a combination of Er cross relaxation and energy transfer to GaN defects, eventually followed by precipitation. This conclusion is supported by x-ray diffraction measurements. As a result, we have determined that the optimum Er doping concentration into GaN is ∼1 at.%. Copyright 2001 American Institute of Physics
-
Naz, Hina; Ali, Rai Nauman; Zhu, Xingqun; Xiang, Bin
2018-06-01
In this paper, we report the effect of single phase Mo and Ti doping concentration on the structural and optical properties of the ZnS nanoparticles. The structural and optical properties of the as-synthesized samples have been examined by x-ray diffraction, transmission electron microscopy (TEM), UV-visible near infrared absorption spectroscopy and x-ray photoelectron spectroscopy. TEM characterizations reveal a variation in the doped ZnS nanoparticle size distribution by utilizing different dopants of Mo and Ti. In absorption spectra, a clear red shift of 14 nm is observed with increasing Mo concentration as compared to pure ZnS nanoparticles, while by increasing Ti doping concentration, blue shift of 14 nm is obtained. Moreover, it demonstrates that the value of energy band gap decreases from 4.03 eV to 3.89 eV in case of Mo doping. However, the value of energy band gap have shown a remarkable increase from 4.11 eV to 4.27 eV with increasing Ti doping concentration. Our results provide a new pathway to understand the effect of Mo and Ti doping concentrations on the structural and optical properties of ZnS nanoparticles as it could be the key to tune the properties for future optoelectronic devices.
-
Ultralow denier polybenzimidazole (PBI) yarns
Tan, M.; Leal, J. R.
1977-01-01
A study to determine the feasibility of preparing ultralow denier polybenzimidazole (PBI) yarns was undertaken. Conditions that presently yield multifilament yarns with bundle deniers ranging from 75 to 15,000 were used as a baseline. From this starting point, process parameters were identified that give five filament yarns with yarn densiers as low as 0.80. Physical properties from such ultralow denier yarns were at levels that would permit subsequent fabrication into fabrics.
-
Energy Technology Data Exchange (ETDEWEB)
Almeida, E.C. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil)]. E-mail: erica@las.inpe.br; Diniz, A.V. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Trava-Airoldi, V.J. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Ferreira, N.G. [CTA-Divisao de Materiais, Sao Jose dos Campos, SP 12228-904 (Brazil)
2005-08-01
Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultrasonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 deg. C from a 0.5% H{sub 2}/CH{sub 4} mixture at a total pressure of 6.5 x 10{sup 3} Pa. Boron was obtained from H{sub 2} forced to pass through a bubbler containing B{sub 2}O{sub 3} dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10{sup 18} to 1.5 x 10{sup 21} cm{sup -} {sup 3}, obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area.
-
International Nuclear Information System (INIS)
Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.
2009-01-01
The ZnO:Ni 2+ nanoparticles of mean size 2-12 nm were synthesized at room temperature by the simple co-precipitation method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The wurtzite structure of ZnO gradually degrades with the increasing Ni doping concentration and an additional NiO-associated diffraction peak was observed above 15% of Ni 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Ni 2+ doping concentration was investigated using a vibrating sample magnetometer (VSM). Initially, these nanoparticles showed strong ferromagnetic behavior, however, at higher doping percentage of Ni 2+ , the ferromagnetic behavior was suppressed and paramagnetic nature was observed. The enhanced antiferromagnetic interaction between neighboring Ni-Ni ions suppressed the ferromagnetism at higher doping concentrations of Ni 2+ .
-
Hwang, Sunbin; Potscavage, William J; Yang, Yu Seok; Park, In Seob; Matsushima, Toshinori; Adachi, Chihaya
2016-10-26
Recent progress in conducting polymer-based organic thermoelectric generators (OTEGs) has resulted in high performance due to high Seebeck coefficient, high electrical conductivity (σ), and low thermal conductivity obtained by chemically controlling the materials's redox levels. In addition to improving the properties of individual OTEGs to obtain high performance, the development of solution processes for the fabrication of OTEG modules is necessary to realize large thermoelectric voltage and low-cost mass production. However, the scarcity of good candidates for soluble organic n-type materials limits the use of π-leg module structures consisting of complementary elements of p- and n-type materials because of unbalanced transport coefficients that lead to power losses. In particular, the extremely low σ of n-type materials compared with that of p-type materials is a serious challenge. In this study, poly(pyridinium phenylene) (P(PymPh)) was tested as an n-type semiconductor in solution-processed OTEGs, and the carrier density was controlled by a solution-based chemical doping process using the dopant sodium naphthalenide, a well-known reductant. The electronic structures and doping mechanism of P(PymPh) were explored based on the changes in UV-Vis-IR absorption, ultraviolet photoelectron, and X-ray photoelectron spectra. By controlling the dopant concentration, we demonstrate a maximum n-type power factor of 0.81 μW m -1 K -2 with high σ, and at higher doping concentrations, a switch from n-type to p-type TE operation. This is one of the first cases of a switch in polarity just by increasing the concentration of the reductant and may open a new route for simplified fabrication of complementary organic layers.
-
Energy Technology Data Exchange (ETDEWEB)
Kole, A. K.; Kumbhakar, P. [Nanoscience Laboratory, Department of Physics, National Institute of Technology, Durgapur 713209, West Bengal (India); Tiwary, C. S. [Department of Materials Engineering, Indian Institute of Science (IISc.), Bangalore 560012 (India)
2013-03-21
Mn{sup 2+} doped (0-50.0 molar %) ZnS d-dots have been synthesized in water medium by using an environment friendly low cost chemical technique. Tunable dual emission in UV and yellow-orange regions is achieved by tailoring the Mn{sup 2+} doping concentration in the host ZnS nanocrystal. The optimum doping concentration for achieving efficient photoluminescence (PL) emission is determined to be {approx}1.10 (at. %) corresponding to 40.0 (molar %) of Mn{sup 2+} doping concentration used during synthesis. The mechanism of charge transfer from the host to the dopant leading to the intensity modulated tunable (594-610 nm) yellow-orange PL emission is straightforwardly understood as no capping agent is used. The temperature dependent PL emission measurements are carried out, viz., in 1.10 at. % Mn{sup 2+} doped sample and the experimental results are explained by using a theoretical PL emission model. It is found that the ratio of non-radiative to radiative recombination rates is temperature dependent and this phenomenon has not been reported, so far, in Mn{sup 2+} doped ZnS system. The colour tuning of the emitted light from the samples are evident from the calculated chromaticity coordinates. UV light irradiation for 150 min in 40.0 (molar %) Mn{sup 2+} doped sample shows an enhancement of 33% in PL emission intensity.
-
Concentration effect of Ca2+ co-doping on Eu3+ doped YPO4 host nanoparticles
International Nuclear Information System (INIS)
Yaiphaba, N.; Phaomei, G.; Singh, N.R.
2013-01-01
YPO 4 doped Eu nanoparticles have been synthesized by ethylene glycol route at low temperature of 120 ℃. The host is co-doped with different concentration of Ca 2+ (Ca 2+ =0, 2, 3, 10 at.%). The samples were characterized by X-ray powder diffraction (XRD) and photoluminescence spectroscopy. XRD results show that the samples have only single tetragonal structure. Fig. 1 shows the expanded region of (hkl = 200) peak of all the samples in the range 25 to 27 ℃ in 2θ on the same day. The (200) peak position is shifted to higher 2θ from 25.8℃ to 26.2℃ when the concentration of Ca +2 increases upto 10 at.%. The crystallite size also decreases from 32 nm to 20 nm with increase in the concentration of Ca 2+ indicating decrease in the crystallinity of the prepared samples. Photoluminescence excitation spectra results show that the phosphor can be efficiently excited by ultra violet light from 250 to 400 nm including three peaks at 230, 255, and 394 nm. Emission spectra of Ca x Eu 0.05 Y 0.95-x PO 4 (x=0, 0.01, 0.03, 0.10) at 230 nm excitation shows that the intensity of the peak increases upto 1 atom % of Ca (x=0.01) and then decreases due to concentration quenching. These nanoparticles are found to be re-dispersible in water and ethanol and are incorporated into polyvinyl alcohol film homogeneously. This film showed bright red emission. (author)
-
Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong
2014-07-01
The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.
-
Ultra-low power integrated circuit design circuits, systems, and applications
Li, Dongmei; Wang, Zhihua
2014-01-01
This book describes the design of CMOS circuits for ultra-low power consumption including analog, radio frequency (RF), and digital signal processing circuits (DSP). The book addresses issues from circuit and system design to production design, and applies the ultra-low power circuits described to systems for digital hearing aids and capsule endoscope devices. Provides a valuable introduction to ultra-low power circuit design, aimed at practicing design engineers; Describes all key building blocks of ultra-low power circuits, from a systems perspective; Applies circuits and systems described to real product examples such as hearing aids and capsule endoscopes.
-
Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young
2014-11-01
The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.
-
Quantification of urinary AICAR concentrations as a matter of doping controls.
Thomas, Andreas; Beuck, Simon; Eickhoff, Jens Christian; Guddat, Sven; Krug, Oliver; Kamber, Matthias; Schänzer, Wilhelm; Thevis, Mario
2010-04-01
Influencing the endurance in elite sports is one of the key points in modern sports science. Recently, a new class of prohibited substances reached in the focus of doping control laboratories and their misuse was classified as gene doping. The adenosine monophosphate activated protein kinase activator 5-amino-4-imidazolecarboxyamide ribonucleoside (AICAR) was found to significantly enhance the endurance even in sedentary mice after treatment. Due to endogenous production of AICAR in healthy humans, considerable amounts were present in the circulation and, thus, were excreted into urine. Considering these facts, the present study was initiated to fix reference values of renally cleared AICAR in elite athletes. Therefore a quantitative analytical method by means of isotope-dilution liquid chromatography (analytical column: C6-phenyl) coupled to tandem mass spectrometry, after a sample preparation consisting of a gentle dilution of native urine, was developed. Doping control samples of 499 athletes were analysed, and AICAR concentrations in urine were determined. The mean AICAR value for all samples was 2,186 ng/mL with a standard deviation of 1,655 ng/mL. Concentrations were found to differ depending on gender, type of sport and type of sample collection (in competition/out of competition). The method was fully validated for quantitative purposes considering the parameters linearity, inter- (12%, 7% and 10%) and intraday precision (14%, 9% and 12%) at low, mid and high concentration, robustness, accuracy (approx. 100%), limit of quantification (100 ng/mL), stability and ion suppression effects, employing an in-house synthesised (13)C(5)-labelled AICAR as internal standard.
-
Diffusion of ion-implanted B in high concentration P- and As-doped silicon
International Nuclear Information System (INIS)
Fair, R.B.; Pappas, P.N.
1975-01-01
The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As was studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si band gap on B diffusivity, D/sub B/. It is shown that D/sub B/ is linearly dependent on the free hole concentration, p, over the range 0.1 less than p/n/sub ie/ less than 30, where n/sub ie/ is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxide source), nor the type of dopant used (P or As). (U.S.)
-
Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on plastics
International Nuclear Information System (INIS)
Kim, Jong-Man; Lim, Huck; Kim, Do-Young; Jung, Ji-Sim; Kwon, Jang-Yeon; Hong, Wan-Shick; Noguchi, Takashi
2006-01-01
An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.
-
Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng
2018-01-01
Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.
-
Comparative study of thermal lensing in low-doped Nd:YVO4 and Nd:GdVO4 of equal doping concentration
CSIR Research Space (South Africa)
Strauss
2009-06-01
Full Text Available stream_source_info Strauss_2009.pdf.txt stream_content_type text/plain stream_size 4705 Content-Encoding UTF-8 stream_name Strauss_2009.pdf.txt Content-Type text/plain; charset=UTF-8 Comparative Study of Thermal Lensing... in Low-doped Nd:YVO4 and Nd:GdVO4 of Equal Doping Concentration H. J. Strauss1,2, C. Bollig1, H. M. von Bergmann2 and M. J. D. Esser1 1. National Laser Centre, Council for Scientific and Industrial Research, PO Box 395, Pretoria 0001, South Africa 2...
-
Energy Technology Data Exchange (ETDEWEB)
Chen Jiangshan; Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Changchun 130022 (China)
2006-05-21
The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6- (1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq{sub 3}) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient ({gamma}) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.
-
Directory of Open Access Journals (Sweden)
Zengyuan Pang
2014-11-01
Full Text Available Camphor sulfonic acid (CSA-doped polyamide 6/polyaniline (PA6/PANI composite nanofibers were fabricated using in situ polymerization of aniline under different CSA concentrations (0.02, 0.04, 0.06, 0.08 and 0.10 M with electrospun PA6 nanofibers as templates. The structural, morphological and ammonia sensing properties of the prepared composite nanofibers were studied using scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FT-IR, four-point probe techniques, X-ray diffraction (XRD and a home-made gas sensing test system. All the results indicated that the CSA concentration had a great influence on the sensing properties of CSA-doped PA6/PANI composite nanofibers. The composite nanofibers doped with 0.02 M CSA showed the best ammonia sensing properties, with a significant sensitivity toward ammonia (NH3 at room temperature, superior to that of the composite nanofibers doped with 0.04–0.10 mol/L CSA. It was found that for high concentrations of CSA, the number of PANI–H+ reacted with NH3 would not make up a high proportion of all PANI–H+ within certain limits. As a result, within a certain range even though higher CSA-doped PA6/PANI nanofibers had better conductivity, their ammonia sensing performance would degrade.
-
Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique
Directory of Open Access Journals (Sweden)
Mohd Sabri Mohd Ghazali
2011-09-01
Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.
-
Dependence of the up-conversion emission of Li+ co-doped Y2O3:Er3+ films with dopant concentration
International Nuclear Information System (INIS)
Meza-Rocha, A.N.; Huerta, E.F.; Caldiño, U.; Carmona-Téllez, S.; Bettinelli, M.; Speghini, A.; Pelli, S.; Righini, G.C.
2015-01-01
The effect of dopant concentration on the up-conversion emission, and in particular on the Er 3+ related green and red emissions of spray pyrolysis deposited films of Y 2 O 3 :Er 3+ co-doped with Li + , is reported. Er 3+ concentrations in the films in the range of 1.1–5.6 at% (1.5–14 at% Er 3+ in the spraying solution) were studied, as well as the effect of co-doping them with Li + . Large concentrations of Er 3+ favor the red emission, especially for contents higher than 10 at% in the spraying solution. Li + co-doping improves the green and red emissions up to 365 and 171 times, respectively, depending on the Er 3+ and Li + concentrations. - Highlights: Up-converting Y 2 O 3 :Er 3+ and Y 2 O 3 :Er 3+ , Li + films were deposited by spray pyrolysis. The effect of Li + co-doping on the green and red UC Er 3+ emission is reported. Li + co-doping improves the green and red emission up to 365 and 171 times
-
Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk
2015-05-05
For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.
-
Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk
2015-05-01
For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.
-
Photoluminescence of highly compensated GaAs doped with high concentration of Ge
Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi
1999-12-01
We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.
-
Aerosol nucleation in an ultra-low ion density environment
DEFF Research Database (Denmark)
Pedersen, Jens Olaf Pepke; Enghoff, Martin Andreas Bødker; Paling, Sean M.
2012-01-01
Ion-induced nucleation has been studied in a deep underground ultra-low background radiation environment where the role of ions can be distinguished from alternative neutral aerosol nucleation mechanisms. Our results demonstrate that ions have a significant effect on the production of small...... sulfuric acid–water clusters over a range of sulfuric acid concentrations although neutral nucleation mechanisms remain evident at low ionization levels. The effect of ions is found both to enhance the nucleation rate of stable clusters and the initial growth rate. The effects of possible contaminations...
-
Scintillation characteristic of In, Ga-doped ZnO thin films with different dopant concentrations
International Nuclear Information System (INIS)
Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira; Sekiwa, Hideyuki
2011-01-01
The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In 3+ - and Ga 3+ -doped ZnO thin films with different dopant concentrations. In 3+ -(25, 55, and 141 ppm) and Ga 3+ -(33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In 3+ and Ga 3+ in the films. However, the scintillation light yield under 241 Am α-ray excitation reduced when concentration of In 3+ and Ga 3+ in the ZnO films was high. (author)
-
Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration
Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki
2018-04-01
The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.
-
Directory of Open Access Journals (Sweden)
Hong-sheng Liu
2013-01-01
Full Text Available In order to study the effects of oil displacement by a foam system of ultralow interfacial tension, the interfacial activities and foam properties of a nonionic gemini surfactant (DWS were investigated under Daqing Oilfield reservoir conditions. Injection methods and alternate cycle of the foam system were discussed here on the basis of results from core flow experiments. It was obtained that the surface tension of DWS was approximately 25 mN/m, and ultralow interfacial tension was reached between oil and DWS with a surfactant concentration between 0.05wt% and 0.4wt%. The binary system showed splendid foam performances, and the preferential surfactant concentration was 0.3wt% with a polymer concentration of 0.2wt%. When gas and liquid were injected simultaneously, flow control capability of the foam reached its peak at the gas-liquid ratio of 3 : 1. Enhanced oil recovery factor of the binary foam system exceeded 10% in a parallel natural cores displacement after polymer flooding.
-
Dopant concentration dependent magnetism of Cu-doped TiO{sub 2} nanocrystals
Energy Technology Data Exchange (ETDEWEB)
Anitha, B.; Khadar, M. Abdul, E-mail: mabdulkhadar@rediffmail.com [University of Kerala, Centre for Nanoscience and Nanotechnology (India)
2016-06-15
Undoped and Cu-doped nanocrystals of TiO{sub 2} having the size range of 8–11 nm were synthesized by peroxide gel method. XRD analysis using Rietveld refinement confirmed anatase phase with a small percentage of rutile content for undoped TiO{sub 2} nanocrystals while a pure anatase phase with preferential growth along [004] direction was observed for nanocrystals of Cu-doped TiO{sub 2}. Variation in the intensity ratios of the XRD peaks of the doped samples compared to that of the undoped sample offered an evidence for the substitutional incorporation of Cu ions in the TiO{sub 2} lattice. The preferential growth of the nanocrystals along the [004] direction was verified using HRTEM analysis. Cu doping extended the optical absorption edge of TiO{sub 2} nanocrystals to the visible spectral region and caused a blue shift and broadening of the E{sub g} (1) Raman active mode of anatase TiO{sub 2}. Undoped TiO{sub 2} sample showed a weak ferromagnetism superimposed on a diamagnetic background while Cu-doped TiO{sub 2} samples exhibited a weak ferromagnetism in the low-field region with a paramagnetic component in the high-field region. The magnetic moment exhibited by the doped samples is interpreted as the resultant of a weak ferromagnetic moment in the low-field region arising from the presence of defects near the surface of TiO{sub 2} nanoparticles or from the interaction of the substituted Cu ions with the oxygen vacancies, and the paramagnetic contribution from the increased Cu dopant concentration near the surface of the particles arising from self-purification mechanism.
-
George, S.D.; Dilna, S.; Prasanth, R.; Radhakrishnan, P.; Vallabhan, C.P.G.; Nampoori, V.P.N.
2003-01-01
We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho's theory of the PA effect. The
-
Di, Yage; Cheung, C. S.; Huang, Zuohua
2010-01-01
Experiments are conducted on a 4-cylinder direct-injection diesel engine using ultralow-sulfur diesel as the base fuel and diglyme as the oxygenate component to investigate the particulate emissions of the engine under five engine loads at two engine speeds of 1800 rev min -1 and 2400 rev min -1. Blended fuels containing 5%, 10.1%, 15.2%, 20.4%, 25.7% and 53% by volume of diglyme, corresponding to 2%, 4%, 6%, 8%, 10% and 20% by mass of oxygen, are studied. The study shows that with the increase of oxygen in the fuel blends, smoke opacity, particulate mass concentration, NO x concentration and brake specific particulate emission are reduced at the two engine speeds. However, the proportion of soluble organic fraction is increased. For each blended fuel, the total particle number concentration is higher while the geometric mean diameter is smaller, compared with that of ultralow-sulfur diesel, though the particle number decreases with the oxygen content of the blended fuel. Furthermore, the blended fuels also increase the number concentrations of particles smaller than 100 nm.
-
The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE
International Nuclear Information System (INIS)
Flynn, Chris; Lee, William
2014-01-01
Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 10 18 –5 × 10 20 cm −3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E 2 and A 1 (LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 10 19 cm −3 , increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN. (papers)
-
Concentration quenching of Eu{sup 2+} doped Ca{sub 2}BO{sub 3}Cl
Energy Technology Data Exchange (ETDEWEB)
Seed Ahmed, H.A.A. [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa); Department of Physics, University of Khartoum, Khartoum (Sudan); Swart, H.C. [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa); Bergman, Peber [Department of Physics, Chemistry and Biology, Linköping University, Linköping (Sweden); Kroon, R.E., E-mail: KroonRE@Uufs.ac.za [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa)
2016-03-15
Highlights: • Ca{sub 2}BO{sub 3}Cl doped with Eu{sup 2+} prepared by solid state reaction. • Concentration quenching studied by intensity and lifetime measurements. • Accurate determination of the critical transfer distance. • Interaction mechanism verified to be dipole–dipole interactions. - Abstract: With the aim of determining the concentration quenching mechanism of Eu{sup 2+} doped Ca{sub 2}BO{sub 3}Cl, a series of phosphors with a varied Eu{sup 2+} concentration (Ca{sub 2−x}BO{sub 3}Cl:xEu{sup 2+}) was synthesized by the solid state reaction method. The phase structure was determined by X-ray diffraction. Photoluminescence (PL) measurements showed broad excitation and emission signatures of the allowed f–d transition of Eu{sup 2+} ions. The PL emission intensity was found to be increased by increasing the concentration of Eu{sup 2+} ions up to x = 0.03 and then decreased as a result of the concentration quenching effect. The lifetime of the emission from the Eu{sup 2+} ions was measured and the decrease in the lifetime with increasing Eu{sup 2+} concentration confirmed that non-radiative energy transfer occurred between Eu{sup 2+} ions. From the luminescence data, the value of the critical transfer distance was calculated as 1.5 nm and the corresponding concentration quenching mechanism was verified to be a dipole–dipole interaction.
-
International Nuclear Information System (INIS)
Chen, T L; Furubayashi, Y; Hirose, Y; Hitosugi, T; Shimada, T; Hasegawa, T
2007-01-01
Nb 0.06 Sn x Ti 0.94-x O 2 (x ≤ 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of λ = 500 nm is estimated to be 12.4% for Nb 0.06 Sn 0.3 Ti 0.64 O 2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO 2 . Low resistivity on the order of 10 -4 Ω cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb 0.06 Sn x Ti 0.94-x O 2 thin films (x ≤ 0.2). Optical and transport analyses demonstrate that doping Sn into Nb 0.06 Ti 0.94 O 2 can reduce the refractivity while maintaining low resistivity and high transparency
-
Ultra Low Concentration Adsorption Equilibria
National Research Council Canada - National Science Library
Mahle, John J; Buettner, Leonard C; LeVan, M. D; Schindler, Bryan J
2006-01-01
.... Specifically this work focuses on novel experimental and modeling methods to characterize and predict at ultra-low chemical vapor concentrations the protection afforded by adsorption-based vapor filtration systems...
-
Nanometer emittance ultralow charge beams from rf photoinjectors
Directory of Open Access Journals (Sweden)
R. K. Li
2012-09-01
Full Text Available In this paper we discuss the generation of a new class of high brightness relativistic electron beams, characterized by ultralow charge (0.1–1 pC and ultralow normalized emittance (<50 nm. These beams are created in rf photoinjectors when the laser is focused on the cathode to very small transverse sizes (<30 μm rms. In this regime, the charge density at the cathode approaches the limit set by the extraction electric field. By shaping the laser pulse to have a cigarlike aspect ratio (the longitudinal dimension much larger than the transverse dimension and a parabolic temporal profile, the resulting space charge dominated dynamics creates a uniformly filled ellipsoidal distribution and the emittance can be nearly preserved to its thermal value. We also present a new method, based on a variation of the pepper-pot technique, for single shot measurements of the ultralow emittances for this new class of beams.
-
Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong
2018-01-01
Low concentrations (stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.
-
Microfluidic ultralow interfacial tensiometry with magnetic particles.
Tsai, Scott S H; Wexler, Jason S; Wan, Jiandi; Stone, Howard A
2013-01-07
We describe a technique that measures ultralow interfacial tensions using paramagnetic spheres in a co-flow microfluidic device designed with a magnetic section. Our method involves tuning the distance between the co-flowing interface and the magnet's center, and observing the behavior of the spheres as they approach the liquid-liquid interface-the particles either pass through or are trapped by the interface. Using threshold values of the magnet-to-interface distance, we make estimates of the two-fluid interfacial tension. We demonstrate the effectiveness of this technique for measuring very low interfacial tensions, O(10(-6)-10(-5)) N m(-1), by testing solutions of different surfactant concentrations, and we show that our results are comparable with measurements made using a spinning drop tensiometer.
-
Energy Technology Data Exchange (ETDEWEB)
Sahu, Manoranjan; Wu Bing; Zhu Liying; Jacobson, Craig; Wang Weining; Jones, Kristen; Goyal, Yogesh; Tang, Yinjie J; Biswas, Pratim, E-mail: pbiswas@wustl.edu [Department of Energy, Environmental and Chemical Engineering, Washington University in St Louis, St Louis, MO 63130 (United States)
2011-10-14
The properties of Cu-doped TiO{sub 2} nanoparticles (NPs) were independently controlled in a flame aerosol reactor by varying the molar feed ratios of the precursors, and by optimizing temperature and time history in the flame. The effect of the physico-chemical properties (dopant concentration, crystal phase and particle size) of Cu-doped TiO{sub 2} nanoparticles on inactivation of Mycobacterium smegmatis (a model pathogenic bacterium) was investigated under three light conditions (complete dark, fluorescent light and UV light). The survival rate of M. smegmatis (in a minimal salt medium for 2 h) exposed to the NPs varied depending on the light irradiation conditions as well as the dopant concentrations. In dark conditions, pristine TiO{sub 2} showed insignificant microbial inactivation, but inactivation increased with increasing dopant concentration. Under fluorescent light illumination, no significant effect was observed for TiO{sub 2}. However, when TiO{sub 2} was doped with copper, inactivation increased with dopant concentration, reaching more than 90% (>3 wt% dopant). Enhanced microbial inactivation by TiO{sub 2} NPs was observed only under UV light. When TiO{sub 2} NPs were doped with copper, their inactivation potential was promoted and the UV-resistant cells were reduced by over 99%. In addition, the microbial inactivation potential of NPs was also crystal-phase-and size-dependent under all three light conditions. A lower ratio of anatase phase and smaller sizes of Cu-doped TiO{sub 2} NPs resulted in decreased bacterial survival. The increased inactivation potential of doped TiO{sub 2} NPs is possibly due to both enhanced photocatalytic reactions and leached copper ions.
-
Synthesis of nano-TiO2 photocatalysts with tunable Fe doping concentration from Ti-bearing tailings
Sui, Yulei; Liu, Qingxia; Jiang, Tao; Guo, Yufeng
2018-01-01
In this work, highly pure nano-TiO2 photocatalysts with varying Fe doping concentration were successfully synthesized from low-cost Ti-bearing tailings by an acidolysis-hydrothermal route. The effects of H2SO4 concentration, leaching temperature, acid/tailings ratio and leaching time on the recovery of TiO2 from the tailings were investigated. Synthesized samples were characterized by XRD, TEM, EDS, XPS, and UV-vis spectroscopy. The results showed that the material prepared is characteristic anatase with the average size of 20 nm and the Fe doping concentration in the synthesized nano-TiO2 is tunable. The photocatalytic activity of synthesized nano-TiO2 photocatalyst was also evaluated by the photodegradation of Rhodamine B under visible light and UV light irradiation. Our study demonstrates a low-cost approach to synthesize highly efficient and visible light responsive catalysts.
-
Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers
Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John
2018-02-01
Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.
-
Üzar, Neslihan
2018-04-01
In this study, undoped ZnO and yttrium (Y)-doped ZnO (YZO) nanoparticles having different Y dopant concentrations (Zn1- x Y x O; x = 0.005, 0.01, 0.015, 0.02) were successfully synthesized by sol-gel dip-coating method. Structural characterizations of the obtained samples were examined with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analyses. SEM analysis shows that the synthesized nanoparticles are mostly dot-like structures. The sizes of nanostructures decrease with increasing Y-doping concentration up to 2 mol % Y and XRD results show that all of samples have wurtzite hexagonal structure of ZnO with (002) c-plane orientation. According to EDS results pure YZO samples are obtained. Optical transmittances of all samples were investigated in the range of 350-750 nm at room temperature. The average optical transmittances of YZO samples in the visible region are approximately over 90%, but the transmittance starts to decrease for Zn0.98Y0.02O sample. Also, it was observed that the optical transmittances of Y-doped samples are higher than that of undoped ZnO. The electrical properties of YZO samples were obtained by resistance measurements at room temperature. The resistivity of samples was found to be 2.25 × 10-3, 1.43 × 10-3, 7.8 × 10-3, and 1.3 × 10-3 Ω-cm for Zn0.995Y0.005O, Zn0.99Y0.01O, Zn0.985Y0.015O and Zn0.98Y0.02O, respectively. All these results show that surface, structural, electrical and optical properties of ZnO samples can be improved with doping Y up to 2 mol % concentrations.
-
Said, Marcel M.
2016-04-25
Poly(3-hexylthiophene) (P3HT) films and P3HT / fullerene photovoltaic cells have been p-doped with very low levels (< 1 wt. %) of molybdenum tris[1-(trifluoromethylcarbonyl)- 2-(trifluoromethyl)-ethane-1,2-dithiolene]. The dopants are inhomogenously distributed within doped P3HT films, both laterally and as a function of depth, and appear to aggregate in some instances. Doping also results in subtle changes in the local and long range order of the P3HT film. These effects likely contribute to the complexity of the observed evolutions in conductivity, mobility and work function with doping levels. They also negatively affect the open-circuit voltage and fill factor of solar cells in unexpected ways, indicating that dopant aggregation and non-uniform distribution can harm device performance.
-
Said, Marcel M.; Zhang, Yadong; Dasari, Raghunath R.; Anjum, Dalaver H.; Munir, Rahim; Hu, Hanlin; Amassian, Aram; Barlow, Stephen; Marder, Seth R.
2016-01-01
Poly(3-hexylthiophene) (P3HT) films and P3HT / fullerene photovoltaic cells have been p-doped with very low levels (< 1 wt. %) of molybdenum tris[1-(trifluoromethylcarbonyl)- 2-(trifluoromethyl)-ethane-1,2-dithiolene]. The dopants are inhomogenously distributed within doped P3HT films, both laterally and as a function of depth, and appear to aggregate in some instances. Doping also results in subtle changes in the local and long range order of the P3HT film. These effects likely contribute to the complexity of the observed evolutions in conductivity, mobility and work function with doping levels. They also negatively affect the open-circuit voltage and fill factor of solar cells in unexpected ways, indicating that dopant aggregation and non-uniform distribution can harm device performance.
-
Energy Technology Data Exchange (ETDEWEB)
Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)
2014-09-07
In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.
-
Omri, K.; Bettaibi, A.; Khirouni, K.; El Mir, L.
2018-05-01
In the current study, we synthesized a Cu-doped ZnO (CZO) nanoparticles material using a sol-gel method with different doping concentrations of Cu (0, 2, 3 and 4 at.%). The control of the Cu concentration on structural, electrical and optical properties of CZO nanoparticles was investigated in detail. The XRD analysis of the CZO nanoparticles reveals the formation of ZnO hexagonal wurtzite structure for all samples which confirm the incorporation of Cu2+ ions into the ZnO lattice by substitution. Furthermore, CZO nanoparticles showed a small red shift of absorption band with the incorporation of Cu from 0 to 4 at.%; i.e. a decreased band gap value from 3.34 eV to 3.27 eV with increasing of Cu doping content. The frequency dispersion of the electric conductivity were studied using the Jonscher universal power law, according to relation σ(ω) = σDC + A ωs(T). Alternative current conductivity increases with increasing Cu content in spite of the decrease the activation energy with copper loading. It was found that the conductivity reached its maximum value for critical Cu concentration of 3 at.%. The frequency relaxation phenomenon was also investigated and all results were discussed in term of the copper doping concentration.
-
Ultralow-loss CMOS copper plasmonic waveguides
DEFF Research Database (Denmark)
Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.
2016-01-01
with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...
-
Suresh, Vignesh; Qunya, Ong; Kanta, Bera Lakshmi; Yuh, Lee Yeong; Chong, Karen S. L.
2018-03-01
This work describes the design, fabrication and characterization of a paper-based microfluidic device for ultra-low detection of urea through enzyme catalysis. The microfluidic system comprises an entry port, a fluidic channel, a reaction zone and two electrodes (contacts). Wax printing was used to create fluidic channels on the surface of a chromatography paper. Pre-conceptualized designs of the fluidic channel are wax-printed on the paper substrate while the electrodes are screen-printed. The paper printed with wax is heated to cause the wax reflow along the thickness of the paper that selectively creates hydrophilic and hydrophobic zones inside the paper. Urease immobilized in the reaction zone catalyses urea into releasing ions and, thereby, generating a current flow between the electrodes. A measure of current with respect to time at a fixed potential enables the detection of urea. The methodology enabled urea concentration down to 1 pM to be detected. The significance of this work lies in the use of simple and inexpensive paper-based substrates to achieve detection of ultra-low concentrations of analytes such as urea. The process is non-invasive and employs a less cumbersome two-electrode assembly.
-
International Nuclear Information System (INIS)
Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.
2006-01-01
The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center
-
Vogel, Michael W; Giorni, Andrea; Vegh, Viktor; Pellicer-Guridi, Ruben; Reutens, David C
2016-01-01
We studied the feasibility of generating the variable magnetic fields required for ultra-low field nuclear magnetic resonance relaxometry with dynamically adjustable permanent magnets. Our motivation was to substitute traditional electromagnets by distributed permanent magnets, increasing system portability. The finite element method (COMSOL®) was employed for the numerical study of a small permanent magnet array to calculate achievable magnetic field strength, homogeneity, switching time and magnetic forces. A manually operated prototype was simulated and constructed to validate the numerical approach and to verify the generated magnetic field. A concentric small permanent magnet array can be used to generate strong sample pre-polarisation and variable measurement fields for ultra-low field relaxometry via simple prescribed magnet rotations. Using the array, it is possible to achieve a pre-polarisation field strength above 100 mT and variable measurement fields ranging from 20-50 μT with 200 ppm absolute field homogeneity within a field-of-view of 5 x 5 x 5 cubic centimetres. A dynamic small permanent magnet array can generate multiple highly homogeneous magnetic fields required in ultra-low field nuclear magnetic resonance (NMR) and magnetic resonance imaging (MRI) instruments. This design can significantly reduce the volume and energy requirements of traditional systems based on electromagnets, improving portability considerably.
-
Energy Technology Data Exchange (ETDEWEB)
Zhou, Bo, E-mail: 357436235@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Long, HangYu, E-mail: 55686385@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Xie, Youneng, E-mail: 1187272844@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Yijia, E-mail: 503630433@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China)
2016-07-30
Highlights: • High quality boron-doped diamond film electrodes were synthesized on Nb substrates. • Electrochemical oxidation on boron-doped diamond anode is an effective method for treating landfill leachate concentrates. • Optimal operating conditions for electrochemical oxidation of landfill leachate concentrates is determined. • 87.5% COD removal and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment. - Abstract: In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH{sub 3}−N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm{sup −2}, pH 5.16, flow velocity 6 L h{sup −1}. Under these conditions, 87.5% COD and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m{sup −3}. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.
-
Energy Technology Data Exchange (ETDEWEB)
Chen, T L [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Furubayashi, Y [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hirose, Y [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hitosugi, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Shimada, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)
2007-10-07
Nb{sub 0.06}Sn{sub x}Ti{sub 0.94-x}O{sub 2} (x {<=} 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of {lambda} = 500 nm is estimated to be 12.4% for Nb{sub 0.06}Sn{sub 0.3} Ti{sub 0.64}O{sub 2} thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO{sub 2}. Low resistivity on the order of 10{sup -4} {omega} cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb{sub 0.06}Sn{sub x} Ti{sub 0.94-x}O{sub 2} thin films (x {<=} 0.2). Optical and transport analyses demonstrate that doping Sn into Nb{sub 0.06} Ti{sub 0.94}O{sub 2} can reduce the refractivity while maintaining low resistivity and high transparency.
-
Energy Technology Data Exchange (ETDEWEB)
Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Ekanayake, Piyaisiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research -A*STAR, 3 Research Link, 117602 (Singapore); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Locked Bag 4, Maroochydore DC, Queensland, 4558 (Australia); Hobley, Jonathan [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Chellappan, Vijila [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Gorelik, Sergey; Subramanian, Gomathy Sandhya [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Lim, Chee Ming [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam)
2015-10-01
Graphical abstract: - Highlights: • The structural, optical and optoelectronic properties of 1 mol.% Fe, Sn and Cu doped TiO{sub 2} have been compared. • Transient lifetimes for pure TiO{sub 2} and Sn doped TiO{sub 2} were considerably shorter than Fe and Cu doped TiO{sub 2}. • A good correlation between the bulk defects and transient decay for the doped TiO{sub 2} powders was observed. • Photon to current conversion efficiency of DSSC based on the metal doped TiO{sub 2} were in order Sn-TiO{sub 2} > Cu-TiO{sub 2} > Pure >> Fe-TiO{sub 2}. • DSSC based on Fe doped photoanodes is limited by a high concentration of surface free holes observed at 433 nm. - Abstract: Electron transfer dynamics in the oxide layers of the working electrodes in both dye-sensitized solar cells and photocatalysts greatly influences their performance. A proper understanding of the distribution of surface and bulk energy states on/in these oxide layers can provide insights into the associated electron transfer processes. Metal ions like Iron (Fe), Copper (Cu) and Tin (Sn) doped onto TiO{sub 2} have shown enhanced photoactivity in these processes. In this work, the structural, optical and transient properties of Fe, Cu and Sn doped TiO{sub 2} nanocrystalline powders have been investigated and compared using EDX, Raman spectroscopy, X-ray Photoelectron spectroscopy (XPS), and Transient Absorption spectroscopy (TAS). Surface free energy states distributions were probed using Electrochemical Impedance spectroscopy (EIS) on Dye Sensitized Solar Cells (DSSC) based on the doped TiO{sub 2} photoanodes. Raman and XPS Ti2p{sub 3/2} peak shifts and broadening showed that the concentration of defects were in the order: Cu doped TiO{sub 2} > Fe doped TiO{sub 2} > Sn doped TiO{sub 2} > pure TiO{sub 2}. Nanosecond laser flash photolysis of Fe and Cu doped TiO{sub 2} indicated slower transient decay kinetics than that of Sn doped TiO{sub 2} or pure TiO{sub 2}. A broad absorption peak and fast
-
Influence of Ag doping concentration on structural and optical properties of CdS thin film
International Nuclear Information System (INIS)
Kumar, Pragati; Saxena, Nupur; Gupta, Vinay; Agarwal, Avinash
2015-01-01
This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag 2 O or Ag 2 S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration
-
Influence of Ag doping concentration on structural and optical properties of CdS thin film
Energy Technology Data Exchange (ETDEWEB)
Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India); Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Saxena, Nupur; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India)
2015-05-15
This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag{sub 2}O or Ag{sub 2}S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration.
-
Energy Technology Data Exchange (ETDEWEB)
Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)
2016-02-29
In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.
-
International Nuclear Information System (INIS)
Turgut, Güven; Koçyiğit, Adem; Sönmez, Erdal
2015-01-01
The Pr and Ta separately doped FTO (10 at.% F incorporated SnO 2 ) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications. (paper)
-
Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.
2016-02-01
Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.
-
Energy Technology Data Exchange (ETDEWEB)
Kermajani, M. [School of Materials Engineering, College of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Ghaini, F. Malek, E-mail: Fmalek@modares.ac.ir [School of Materials Engineering, College of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Miresmaeili, R. [School of Materials Engineering, College of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Aghakouchak, A.A. [School of Civil Engineering, College of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Shadmand, M. [Department of Research and Development, MAPNA Electric and Control (MECO) Company, Karaj (Iran, Islamic Republic of)
2016-06-21
Results from 12 ultra-low cycle fatigue tests performed on the weld metals of both toughness and non-toughness rated grades are presented. Fracture resistance under these loadings seemed to be dependent on materials' toughness, displacement amplitude, and stress state triaxiality, while the toughness effect was more highlighted at high stress levels and concentrations. To study the effect of microstructures on these failures, supporting ancillary tests including all-weld tension coupons, Charpy V-notched impact tests, and optical and scanning electron microscope analyses were performed. The favored microstructures appeared to be those which absorbed energy by plastic deformation and, hence, hindered void formation and/or could avoid crack propagation by deflection. Considering the response of the tested materials to cyclic loadings and the requirements of the materials specified in AISC341 Provisions could question the adequacy of these requirements for weld metals. However, the role of microstructural features like inclusions would be the same in both the Charpy impact tests and ultra-low cycle loadings.
-
Neutron transmutation doping of polycrystalline silicon
International Nuclear Information System (INIS)
Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.
1976-04-01
Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed
-
International Nuclear Information System (INIS)
Rahmanian, Afsaneh; Knoll, Meinhard
2012-01-01
Highlights: ► We modify the doping front migration process. ► The migration velocity is controlled by a separate electrode. ► The process may be used in “best use before” labels. - Abstract: We demonstrate a new method of modifying the doping front migration process in multilayer structures, enabling the control of migration velocity. The presence of two interfaces in contact with the migration layer strongly affects the migration mechanism. Electrochemical switching of an electrode at one interface may be used to control the chemical doping front migration at the second interface. The process may be used to produce ultralow-cost devices acting as electronic “best use before” labels on food and drink or “use-by” labels on drugs. Control of the migration velocity may be used as a method for weighting storage conditions (i.e. opening of a package during the measurement period increases the migration velocity).
-
Energy Technology Data Exchange (ETDEWEB)
Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa
2016-11-30
Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in Zn
-
Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong
2015-12-01
The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.
-
Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN
Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.
2017-06-01
Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.
-
Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.
2017-11-01
Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.
-
Directory of Open Access Journals (Sweden)
Abdul Halim N. Syafira
2017-01-01
Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.
-
Yang, Weimin; Zhang, Bing; Zhang, Qitu; Wang, Lixi; Song, Bo; Wu, Fan; Wong, C P
2017-09-01
An ultrasonic method is employed to synthesize the Sn doped Zn 0.95 Sn 0.05 O quantum dots with green light emission. Sn 2+ and Sn 4+ ions are used to create different optical defects inside Zn 0.95 Sn 0.05 O quantum dots and the changing trend of oxygen concentration under different ultrasonic irradiation power are investigated. The photoluminescence spectra are employed to characterize the optical defects of Zn 0.95 Sn 0.05 O quantum dots. The UV-vis spectra are used to study the band gap of Zn 0.95 Sn 0.05 O quantum dots, which is influenced by their sizes. The results indicate that ultrasonic power would influence the size of Zn 0.95 Sn 0.05 O quantum dots as well as the type and quantity of defects in ZnO quantum dots. Changing trends in size of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are quite similar with each other, while the changing trends in optical defects types and concentration of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are different. The difference of the optical defects concentration changing between Sn 2+ doped Zn 0.95 Sn 0.05 O quantum dots (V O defects) and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots (O Zn and O i defects) shows that the formation process of ZnO under ultrasonic irradiation wiped oxygen out. Copyright © 2017 Elsevier B.V. All rights reserved.
-
Chambers, Scott A; Gu, Meng; Sushko, Peter V; Yang, Hao; Wang, Chongmin; Browning, Nigel D
2013-08-07
Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
-
Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.
Lee, Byeongdu; Park, Young-Hee; Hwang, Yong-Taek; Oh, Weontae; Yoon, Jinhwan; Ree, Moonhor
2005-02-01
Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k noise in interconnect conductors, but also minimize power dissipation by reducing the capacitance between the interconnects. Here we describe the preparation of low- and ultralow-k nanoporous organosilicate dielectrics from blends of polymethylsilsesquioxane (PMSSQ) precursor with globular ethyl acrylate-terminated polypropylenimine dendrimers, which act as porogens. These dendrimers are found to mix well with the PMSSQ precursor and after their sacrificial thermal decompositions result in closed, spherical pores of <2.0 nm radius with a very narrow distribution even at high loading. This pore size and distribution are the smallest and the narrowest respectively ever achieved in porous spin-on dielectrics. The method therefore successfully delivers low- and ultralow-k PMSSQ dielectric films that should prove very useful in advanced integrated circuits.
-
International Nuclear Information System (INIS)
Singh, L Robindro; Ningthoujam, R S; Sudarsan, V; Srivastava, Iti; Singh, S Dorendrajit; Dey, G K; Kulshreshtha, S K
2008-01-01
Nanoparticles of Eu 3+ doped Y 2 O 3 (core) and Eu 3+ doped Y 2 O 3 covered with Y 2 O 3 shell (core-shell) are prepared by urea hydrolysis for 3 h in ethylene glycol medium at a relatively low temperature of 140 deg. C, followed by heating at 500 and 900 deg. C. Particle sizes determined from x-ray diffraction and transmission electron microscopic studies are 11 and 18 nm for 500 and 900 deg. C heated samples respectively. Based on the luminescence studies of 500 and 900 deg. C heated samples, it is confirmed that there is no particle size effect on the peak positions of Eu 3+ emission, and optimum luminescence intensity is observed from the nanoparticles with a Eu 3+ concentration of 4-5 at.%. A luminescence study establishes that the Eu 3+ environment in amorphous Y (OH) 3 is different from that in crystalline Y 2 O 3 . For a fixed concentration of Eu 3+ doping, there is a reduction in Eu 3+ emission intensity for core-shell nanoparticles compared to that of core nanoparticles, and this has been attributed to the concentration dilution effect. Energy transfer from the host to Eu 3+ increases with increase of crystallinity
-
Influence of Sc doping concentration on electronic structure and optical properties of ZnO
International Nuclear Information System (INIS)
Wu Yuxi; Zhang Hao; Han Long; Qu Licheng; Gu Shulin; Li Teng
2011-01-01
In this paper, we adopt the density functional theory (DFT) plane wave pseudopotential method to study the crystal structure, electronic structure and optical property for the different concentrations of Sc doped ZnO system. We optimize the structure of Sc and get the basis of numerical simulation. The results show that with the adoption of Sc, the lattice constants of the system increase gradually, the energy of the system becomes larger, the Fermi level enters into the conduction band, the system shows Metallic gradually and the band gap becomes wider. On the other hand, certain changes of the optical properties of doped ZnO have taken place, i. e., a new absorption peak happens in ZnO absorption spectrum and the blue shift of absorption edge with the new peak occurs in the imagery part of dielectric function. (authors)
-
Directory of Open Access Journals (Sweden)
K. Usharani
2015-06-01
Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.
-
Design of ultra-low power impulse radios
Apsel, Alyssa; Dokania, Rajeev
2014-01-01
This book covers the fundamental principles behind the design of ultra-low power radios and how they can form networks to facilitate a variety of applications within healthcare and environmental monitoring, since they may operate for years off a small battery or even harvest energy from the environment. These radios are distinct from conventional radios in that they must operate with very constrained resources and low overhead. This book provides a thorough discussion of the challenges associated with designing radios with such constrained resources, as well as fundamental design concepts and practical approaches to implementing working designs. Coverage includes integrated circuit design, timing and control considerations, fundamental theory behind low power and time domain operation, and network/communication protocol considerations. • Enables detailed understanding of the design space for ultra-low power radio; • Provides detailed discussion and examples of the design of a practical low power ...
-
International Nuclear Information System (INIS)
Siddiqua, Poppy; O'Leary, Stephen K.
2016-01-01
Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored.
-
International Nuclear Information System (INIS)
Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H
2012-01-01
A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.
-
Advanced Technology for Ultra-Low Power System-on-Chip (SoC)
2017-06-01
was proposed for lower power applications with Ioff=10pA/μm and VDD=0.5V. In this project, the optimized structure shows great potential in both Lg...AFRL-RY-WP-TR-2017-0115 ADVANCED TECHNOLOGY FOR ULTRA-LOW POWER SYSTEM-ON-CHIP (SoC) Jason Woo, Weicong Li, and Peng Lu University of California...September 2015 – 31 March 2017 4. TITLE AND SUBTITLE ADVANCED TECHNOLOGY FOR ULTRA-LOW POWER SYSTEM-ON- CHIP (SoC) 5a. CONTRACT NUMBER FA8650-15-1-7574 5b
-
Ultra-low magnetic damping in metallic and half-metallic systems
Shaw, Justin
The phenomenology of magnetic damping is of critical importance to devices which seek to exploit the electronic spin degree of freedom since damping strongly affects the energy required and speed at which a device can operate. However, theory has struggled to quantitatively predict the damping, even in common ferromagnetic materials. This presents a challenge for a broad range of applications in magnonics, spintronics and spin-orbitronics that depend on the ability to precisely control the damping of a material. I will discuss our recent work to precisely measure the intrinsic damping in several metallic and half-metallic material systems and compare experiment with several theoretical models. This investigation uncovered a metallic material composed of Co and Fe that exhibit ultra-low values of damping that approach values found in thin film YIG. Such ultra-low damping is unexpected in a metal since magnon-electron scattering dominates the damping in conductors. However, this system possesses a distinctive feature in the bandstructure that minimizes the density of states at the Fermi energy n(EF). These findings provide the theoretical framework by which such ultra-low damping can be achieved in metallic ferromagnets and may enable a new class of experiments where ultra-low damping can be combined with a charge current. Half-metallic Heusler compounds by definition have a bandgap in one of the spin channels at the Fermi energy. This feature can also lead to exceptionally low values of the damping parameter. Our results show a strong correlation of the damping with the order parameter in Co2MnGe. Finally, I will provide an overview of the recent advances in achieving low damping in thin film Heusler compounds.
-
Maller, Robert
2016-05-24
The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.
-
Maller, Robert; Porte, Yoann; Alshareef, Husam N.; McLachlan, Martyn
2016-01-01
The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.
-
Singh, N. Shanta; Ningthoujam, R. S.; Devi, L. Romila; Yaiphaba, N.; Sudarsan, V.; Singh, S. Dorendrajit; Vatsa, R. K.; Tewari, R.
2008-11-01
Nanoparticles of GdVO4 doped with Eu3+ and core/shell of GdVO4:Eu3+/GdVO4 are prepared by urea hydrolysis method using ethylene glycol as capping agent as well as reaction medium at 130 °C. Unit cell volume increases when GdVO4 is doped with Eu3+ indicating the substitution of Gd3+ lattice sites by Eu3+. From luminescence study, it is confirmed that there is no particle size effect on emission positions of Eu3+. Optimum luminescence intensity is found to be in 5-10 at. % Eu3+. Above these concentrations, luminescence intensity decreases due to concentration quenching effect. There is an enhancement in luminescence intensity of core/shell nanoparticles. This has been attributed to the reduction in surface inhomogenities of Eu3+ surroundings by bonding to GdVO4 shell. The lifetime for D50 level increases with annealing and core/shell formation.
-
Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping
Mansour, Ahmed
2017-05-23
Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.
-
Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping
Mansour, Ahmed; Kirmani, Ahmad R.; Barlow, Stephen; Marder, Seth R.; Amassian, Aram
2017-01-01
Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.
-
Homojunction p-n photodiodes based on As-doped single ZnO nanowire
International Nuclear Information System (INIS)
Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.
2013-01-01
Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices
-
Yadav, Ram Sagar; Rai, Shyam Bahadur
2018-03-01
In this article, the Tb3+ doped Y2O3 nano-phosphor has been synthesized through solution combustion method. The structural measurements of the nano-phosphor have been carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques, which reveal nano-crystalline nature. The Fourier transform infrared (FTIR) measurements reveal the presence of different molecular species in the nano-phosphor. The UV-Vis-NIR absorption spectrum of the nano-phosphor shows large number of bands due to charge transfer band (CTB) and 4f-4f electronic transitions of Tb3+ ion. The Tb3+ doped Y2O3 nano-phosphor emits intense green downshifting photoluminescence centered at 543 nm due to 5D4 → 7F5 transition on excitation with 350 nm. The emission intensity of the nano-phosphor is optimized at 1.0 mol% concentration of Tb3+ ion. When the as-synthesized nano-phosphor is annealed at higher temperature the emission intensity of the nano-phosphor enhances upto 5 times. The enhancement in the emission intensity is due to an increase in crystallinity of the nano-phosphor, reduction in surface defects and optical quenching centers. The CIE diagram reveals that the Tb3+ doped nano-phosphor samples show the photochromic nature (color tunability) with a change in the concentration of Tb3+ ion and excitation wavelength. The lifetime measurement indicates an increase in the lifetime for the annealed sample. Thus, the Tb3+ doped Y2O3 nano-phosphor may be used in photochromic displays and photonic devices.
-
PHYSICS WITH ULTRA-LOW ENERGY ANTIPROTONS
Energy Technology Data Exchange (ETDEWEB)
M. HOLZSCHEITER
2001-02-01
In this report the author describes the current status of the antiproton deceleration (AD) facility at CERN, and highlights the physics program with ultra-low energy antiproton at this installation. He also comments on future possibilities provided higher intensity antiproton beams become available at Fermilab, and review possibilities for initial experiments using direct degrading of high energy antiprotons in material has been developed and proven at CERN.
-
International Nuclear Information System (INIS)
Shehata, N.; Meehan, K.; Hudait, M.; Jain, N.
2012-01-01
The effect of lanthanides that have positive association energies with oxygen vacancies, such as samarium and neodymium, and the elements with negative association energies, such as holmium and erbium, on ionization state of cerium and, consequentially, the oxygen vacancy concentration in doped ceria nanoparticles are investigated in this article. Structural and optical characterizations of the doped and undoped ceria nanoparticles, synthesized using chemical precipitation, are carried out using transmission electron microscopy, X-ray diffractometry, optical absorption spectroscopy, and fluorescence spectroscopy. It is deduced that the negative association energy dopants decrease the conversion of Ce +4 into Ce +3 and, hence, scavenge the oxygen vacancies, evidenced by the observed increase in the allowed direct bandgap, decrease in the integrated fluorescence intensity, and increased the size of doped nanoparticles. The opposite trends are obtained when the positive association dopants are used. It is concluded that the determining factor as to whether a lanthanide dopant in ceria acts as a generator or scavenger of oxygen vacancies in ceria nanoparticles is the sign of the association energy between the element and the oxygen vacancies. The ability to tailor the ionization state of cerium and the oxygen vacancy concentration in ceria has applications in a broad range of fields, which include catalysis, biomedicine, electronics, and environmental sensing.
-
International Nuclear Information System (INIS)
Thi, Tran Minh; Trang, Nguyen Thi Huyen; Van Anh, Nguyen Thi
2015-01-01
Highlights: • Investigation the decrease of saturate magnetic moment of Fe 3 O 4 over time. • Substitution of Mn, Cu ions into Fe position to create stable properties of materials. • Investigate the surface and mesopore structure of nanoparticles. • The arsenic adsorption capacity of Cu doped Fe 3 O 4 nanomaterials is higher than of Fe 3 O 4 and Mn doped Fe 3 O 4 nanomaterials. - Abstract: The research results of Fe 3 O 4 and Mn, Cu doped Fe 3 O 4 nanomaterials synthesized by a chemical method for As(III) wastewater treatment are presented in this paper. The X-ray diffraction patterns and transmission electron microscopy images showed that samples had the cubic spinel structure with the grain sizes were varied from 9.4 nm to 18.1 nm. The results of vibrating sample magnetometer measurements at room temperature showed that saturation magnetic moments of Fe 1−x Cu x Fe 2 O 4 and Fe 1−x Mn x Fe 2 O 4 samples decreased from 65.9 emu/g to 53.2 emu/g and 65.9 emu/g to 61.5 emu/g, respectively, with the increase of Cu, Mn concentrations from 0.0 to 0.15. The nitrogen adsorption–desorption isotherm of a typical Fe 3 O 4 sample at 77 K was studied in order to investigate the surface and porous structure of nanoparticles by BET method. The specific surface area of Fe 3 O 4 magnetic nanoparticles was calculated about of 100.2 m 2 /g. The pore size distribution of about 15–20 nm calculated by the BJH (Barrett, Joyner, and Halendar) method at a relative pressure P/P 0 of about 1. Although the saturation magnetic moments of samples decreased when the increase of doping concentration, but the arsenic adsorption capacity of Cu doped Fe 3 O 4 nanoparticles is better than that of Fe 3 O 4 and Mn doped Fe 3 O 4 nanoparticles in a solution with pH = 7. In the solution with a pH > 14, the arsenic adsorption of magnetic nanoparticles is insignificant
-
International Nuclear Information System (INIS)
Choudhury, B.; Choudhury, A.; Maidul Islam, A.K.M.; Alagarsamy, P.; Mukherjee, M.
2011-01-01
Co doped TiO 2 nanoparticles have been synthesized by a simple sol-gel route taking 7.5, 9.5 and 10.5 mol% of cobalt concentration. Formation of nanoparticles is confirmed by XRD and TEM. Increase in d-spacing occurs for (0 0 4) and (2 0 0) peak with increase in impurity content. Valence states of Co and its presence in the doped material is confirmed by XPS and EDX. The entire vacuum annealed samples show weak ferromagnetism. Increased magnetization is found for 9.5 mol% but this value again decreases for 10.5 mol% due to antiferromagnetic interactions. A blocking temperature of 37.9 K is obtained, which shows shifting to high temperature as the dopant concentration is increased. The air annealed sample shows only paramagnetic behavior. Temperature dependent magnetic measurements for the air annealed sample shows antiferromagnetic behavior with a Curie-Weiss temperature of -16 K. Here we report that oxygen vacancy and cobalt aggregates are a key factor for inducing ferromagnetism-superparamagnetism in the vacuum annealed sample. Appearance of negative Curie-Weiss temperature reveals the presence of antiferromagnetic Co 3 O 4 , which is the oxidation result of metallic Co or cobalt clusters present on the host TiO 2 . - Research highlights: → Oxygen vacancy induces ferromagnetism in cobalt doped anatase TiO2 nanoparticles. → On air annealing the sample loses ferromagnetism giving rise to paramagnetism. → Saturation magnetization decreases at higher doping concentration. → Blocking of magnetic moment occurs due to the presence of cobalt clusters.
-
Murzakhanov, F.; Mamin, G.; Voloshin, A.; Klimashina, E.; Putlyaev, V.; Doronin, V.; Bakhteev, S.; Yusupov, R.; Gafurov, M.; Orlinskii, S.
2018-05-01
Powders of synthetic hydroxyapatite doped with Mn2+ ions in concentrations from 0.05 till 5 wt. % were investigated by conventional electron paramagnetic resonance (EPR). The parameters of the spin-Hamiltonian are derived. Partially resolved hyperfine structure in the magnetic fields corresponding to g ≈ 4.3 and g ≈ 9.4 is observed. The narrowing of the central peak with concentration is reported. A possibility to use the linewidth and intensity of the central peak for concentration measurements are discussed. The results could be used for the identification and qualification of Mn2+ in oil, mining and ore formations.
-
Kalabukhov, D. S.; Radko, V. M.; Grigoriev, V. A.
2018-01-01
Ultra-low power turbine drives are used as energy sources in auxiliary power systems, energy units, terrestrial, marine, air and space transport within the confines of shaft power N td = 0.01…10 kW. In this paper we propose a new approach to the development of surrogate models for evaluating the integrated efficiency of multistage ultra-low power impulse turbine with pressure stages. This method is based on the use of existing mathematical models of ultra-low power turbine stage efficiency and mass. It has been used in a method for selecting the rational parameters of two-stage axial ultra-low power turbine. The article describes the basic features of an algorithm for two-stage turbine parameters optimization and for efficiency criteria evaluating. Pledged mathematical models are intended for use at the preliminary design of turbine drive. The optimization method was tested at preliminary design of an air starter turbine. Validation was carried out by comparing the results of optimization calculations and numerical gas-dynamic simulation in the Ansys CFX package. The results indicate a sufficient accuracy of used surrogate models for axial two-stage turbine parameters selection
-
International Nuclear Information System (INIS)
Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng
2016-01-01
A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)
-
Effect of doping on the electron transport in polyfluorene
Energy Technology Data Exchange (ETDEWEB)
Bajpai, Manisha, E-mail: mansa83@gmail.com [Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad, 211002 (India); Department of Physics, Banaras Hindu University, Varanasi-221005 (India); Srivastava, Ritu [Physics for Energy Harvesting Division, National Physical Laboratory (Council of Scientific and Industrial Research), Dr K. S. Krishnan Road, New Delhi 110012 (India); Dhar, Ravindra [Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad, 211002 (India); Tiwari, R. S. [Department of Physics, Banaras Hindu University, Varanasi-221005 (India)
2016-05-06
In this paper, electron transport of pure and DMC doped polyfluorne (PF) films have been studied at various doping concentrations. Pure films show space charge limited conduction with field and temperature dependent mobility. The J–V characteristics of doped PF were ohmic at low voltages due to thermally released carriers from dopant states. At higher voltages the current density increases nonlinearly due to field dependent mobility and carrier concentration thereby filling of tail states of HOMO of the host. The conductivity of doped films were analyzed using the Unified Gaussian Disorder Model (UGDM). The carrier concentration obtained from the fitting show a non-linear dependence on doping concentration which may be due to a combined effect of thermally activated carrier generation and increased carrier mobility.
-
Dopant concentration and thermoluminescence (TL) properties of tailor-made Ge-doped SiO2 fibres
International Nuclear Information System (INIS)
Zahaimi, Nurul Arina; Ooi Abdullah, Mohd Haris Ridzuan; Zin, Hafiz; Abdul Rahman, Ahmad Lutfi; Hashim, Suhairul; Saripan, Mohd Iqbal; Paul, Mukul Chandra; Bradley, D.A.; Abdul Rahman, Ahmad Taufek
2014-01-01
Study focuses on characterisation of diverse concentrations of Ge-doped SiO 2 fibre as a potential thermoluminescence (TL) system for radiotherapy dosimetry. Irradiations were made using a linear accelerator providing 6 MV and 10 MV photon beams. Investigation has been done on various doped core diameter Ge-doped SiO 2 glass fibres such as commercial telecommunication fibres of 8 µm and 9 µm (CorActive High Tech, Canada), tailor-made fibres of 23 and 50 µm produced by the Central Glass and Ceramic Research Institute Kolkata, and tailor-made fibres of 11 µm produced by the University of Malaya Photonics Research Centre. The fibres have been characterised for TL sensitivity, reproducibility, dose- and energy-dependence. The area under the TL glow curve increases with increasing core diameter. For repeat irradiations at a fixed dose the dosimeter produces a flat response better than 4% (1SD) of the mean of the TL distribution. Minimal TL signal fading was found, less than 0.5% per day post irradiation. Linearity of TL has been observed with a correlation coefficient (r 2 ) of better than 0.980 (at 95% confidence level). For particular dopant concentrations, the least square fits show the change in TL yield, in counts per second per unit mass, obtained from 50 µm core diameter fibres irradiated at 6 MV of photon to be 8 times greater than that of 8 µm core diameter fibre. With respect to energy response, the TL yield at 10 MV decreases by∼5% compared to that at 6 MV, primarily due to the lower mass energy absorption coefficient at higher photon energy. These early results indicate that selectively screened fibres can be developed into a promising TL system, offering high spatial resolution capability and, with this, verification of complex radiotherapy dose distributions. - Highlights: • We examined the TL glow curve intensity for various diameter sizes of germanium doped silica glass fibre. • TL sensitivity increased with the increase of fibre core
-
Akbari, S.; Kovač, J.; Kalin, M.
2016-10-01
This work focuses on the ZDDP concentration (1, 5 and 20 wt%) to form a ZDDP film on surfaces during static thermal tests at 150 °C. Silicon-doped and hydrogenated DLC coatings, as well as steel as reference, were studied using Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The results show that, on the three surfaces, the structure of the ZDDP thermal film consists of identical groups of pyrophosphate and zinc oxide, while the sulphuric groups are dissimilar. On the steel surface, the sulphuric part consists of a mixture of organic sulphide and sulphohydryl groups, but on H-DLC and Si-DLC only organic sulphide groups are found; there are no sulphohydryl groups. Moreover, both ATR-FTIR and XPS show that different concentrations of ZDDP do not affect the final chemical structure of the ZDDP thermal film on any of the studied surfaces. In addition, the XPS results show that the thickness of the thermal film is linear with the concentration for the whole range from 1 to 20 wt%, supporting also its uniform chemical structure. These thicknesses further show that the reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings.
-
Nanoparticles doped film sensing based on terahertz metamaterials
Liu, Weimin; Fan, Fei; Chang, Shengjiang; Hou, Jiaqing; Chen, Meng; Wang, Xianghui; Bai, Jinjun
2017-12-01
A nanoparticles concentration sensor based on doped film and terahertz (THz) metamaterial has been proposed. By coating the nanoparticles doped polyvinyl alcohol (PVA) film on the surface of THz metamaterial, the effects of nanoparticle concentration on the metamaterial resonances are investigated through experiments and numerical simulations. Results show that resonant frequency of the metamaterial linearly decreases with the increment of doping concentration. Furthermore, numerical simulations illustrate that the redshift of resonance results from the changes of refractive index of the doped film. The concentration sensitivity of this sensor is 3.12 GHz/0.1%, and the refractive index sensitivity reaches 53.33 GHz/RIU. This work provides a non-contact, nondestructive and sensitive method for the detection of nanoparticles concentration and brings out a new application on THz film metamaterial sensing.
-
Ultra-low loss nano-taper coupler for Silicon-on-Insulator ridge waveguide
DEFF Research Database (Denmark)
Pu, Minhao; Liu, Liu; Ou, Haiyan
2010-01-01
A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler.......A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler....
-
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing
Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.
2017-11-01
High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8 × 1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1 × 1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.
-
Remote Molecular Doping of Colloidal Quantum Dot Photovoltaics
Kirmani, Ahmad R.
2016-10-07
In recent years colloidal quantum dot (CQD) photovoltaics have developed rapidly because of novel device architectures and robust surface passivation schemes. Achieving controlled net doping remains an important unsolved challenge for this field. Herein we present a general molecular doping platform for CQD solids employing a library of metal–organic complexes. Low effective ionization energy and high electron affinity complexes are shown to produce n- and p-doped CQD solids. We demonstrate the obvious advantage in solar cells by p-doping the CQD absorber layer. Employing photoemission spectroscopy, we identify two doping concentration regimes: lower concentrations lead to efficient doping, while higher concentrations also cause large surface dipoles creating energy barriers to carrier flow. Utilizing the lower concentration regime, we remove midgap electrons leading to 25% enhancement in the power conversion efficiency relative to undoped cells. Given the vast number of available metal–organic complexes, this approach opens new and facile routes to tuning the properties of CQDs for various applications without necessarily resorting to new ligand chemistries.
-
Remote Molecular Doping of Colloidal Quantum Dot Photovoltaics
Kirmani, Ahmad R.; Kiani, Amirreza; Said, Marcel M.; Voznyy, Oleksandr; Wehbe, Nimer; Walters, Grant; Barlow, Stephen; Sargent, Edward H.; Marder, Seth R.; Amassian, Aram
2016-01-01
In recent years colloidal quantum dot (CQD) photovoltaics have developed rapidly because of novel device architectures and robust surface passivation schemes. Achieving controlled net doping remains an important unsolved challenge for this field. Herein we present a general molecular doping platform for CQD solids employing a library of metal–organic complexes. Low effective ionization energy and high electron affinity complexes are shown to produce n- and p-doped CQD solids. We demonstrate the obvious advantage in solar cells by p-doping the CQD absorber layer. Employing photoemission spectroscopy, we identify two doping concentration regimes: lower concentrations lead to efficient doping, while higher concentrations also cause large surface dipoles creating energy barriers to carrier flow. Utilizing the lower concentration regime, we remove midgap electrons leading to 25% enhancement in the power conversion efficiency relative to undoped cells. Given the vast number of available metal–organic complexes, this approach opens new and facile routes to tuning the properties of CQDs for various applications without necessarily resorting to new ligand chemistries.
-
Khrebtov, A. A.; Fedorenko, E. V.; Reutov, V. A.
2017-11-01
In this paper we investigated polymeric luminescent compositions based on polystyrene doped with beta diketonates boron difluoride. Transparent films with effective absorption in the ultraviolet and blue regions of the spectrum were obtained. Polymeric luminescent compositions based on the mixture of dyes allow expanding the absorption region and increase the radiation shift. A luminescent solar concentrator consisting of a glass plate coated with such film can be used for photovoltaic window application.
-
Mariappan, R.; Ponnuswamy, V.; Chandra Bose, A.; Suresh, R.; Ragavendar, M.
2014-09-01
Yttrium doped Zinc Oxide (YxZn1-xO) thin films deposited at a substrate temperature 400 °C. The effect of substrate temperature on the structural, surface morphology, compositional, optical and electrical properties of YxZn1-xO thin films was studied. X-ray diffraction studies show that all films are polycrystalline in nature with hexagonal crystal structure having highly textured (002) plane parallel to the surface of the substrate. The structural parameters, such as lattice constants (a and c), crystallite size (D), dislocation density (δ), microstrain (σ) and texture coefficient were calculated for different yttrium doping concentrations (x). High resolution scanning electron microscopy measurements reveal that the surface morphology of the films change from platelet like grains to hexagonal structure with grain size increase due to the yttrium doping. Energy dispersive spectroscopy confirms the presence of Y, Zn and O elements in the films prepared. Optical studies showed that all samples have a strong optical transmittance higher than 70% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the Y doping concentration increased. This result shows that the band gap is slightly decreased from 3.10 to 2.05 eV with increase of the yttrium doping concentrations (up to 7.5%) and then slightly increased. Room temperature PL measurements were done and the band-to-band emission energies of films were determined and reported. The complex impedance of the 10%Y doped ZnO film shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 70 to 175 °C.
-
Ultra-low coupling loss fully-etched apodized grating coupler with bonded metal mirror
DEFF Research Database (Denmark)
Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan
2014-01-01
A fully etched apodized grating coupler with bonded metal mirror is designed and demonstrated on the silicon-on-insulator platform, showing an ultra-low coupling loss of only 1.25 dB with 3 dB bandwidth of 69 nm.......A fully etched apodized grating coupler with bonded metal mirror is designed and demonstrated on the silicon-on-insulator platform, showing an ultra-low coupling loss of only 1.25 dB with 3 dB bandwidth of 69 nm....
-
Energy Technology Data Exchange (ETDEWEB)
Messerli, Michael [University Zurich, Department of Nuclear Medicine, University Hospital Zurich, Zurich (Switzerland); Cantonal Hospital St. Gallen, Division of Radiology and Nuclear Medicine, St. Gallen (Switzerland); Kluckert, Thomas; Knitel, Meinhard; Desbiolles, Lotus; Bauer, Ralf W.; Wildermuth, Simon [Cantonal Hospital St. Gallen, Division of Radiology and Nuclear Medicine, St. Gallen (Switzerland); Waelti, Stephan [Cantonal Hospital St. Gallen, Division of Radiology and Nuclear Medicine, St. Gallen (Switzerland); University of Montreal, Department of Radiology, CHU Sainte-Justine, Montreal, Quebec (Canada); Rengier, Fabian [University Hospital Heidelberg, Department of Diagnostic and Interventional Radiology, Heidelberg (Germany); Warschkow, Rene [Cantonal Hospital St. Gallen, Department of Surgery, St. Gallen (Switzerland); Alkadhi, Hatem [University Zurich, Institute of Diagnostic and Interventional Radiology, University Hospital Zurich, Zurich (Switzerland); Leschka, Sebastian [Cantonal Hospital St. Gallen, Division of Radiology and Nuclear Medicine, St. Gallen (Switzerland); University Zurich, Institute of Diagnostic and Interventional Radiology, University Hospital Zurich, Zurich (Switzerland)
2017-08-15
To prospectively evaluate the accuracy of ultralow radiation dose CT of the chest with tin filtration at 100 kV for pulmonary nodule detection. 202 consecutive patients undergoing clinically indicated chest CT (standard dose, 1.8 ± 0.7 mSv) were prospectively included and additionally scanned with an ultralow dose protocol (0.13 ± 0.01 mSv). Standard dose CT was read in consensus by two board-certified radiologists to determine the presence of lung nodules and served as standard of reference (SOR). Two radiologists assessed the presence of lung nodules and their locations on ultralow dose CT. Sensitivity and specificity of the ultralow dose protocol was compared against the SOR, including subgroup analyses of different nodule sizes and types. A mixed effects logistic regression was used to test for independent predictors for sensitivity of pulmonary nodule detection. 425 nodules (mean diameter 3.7 ± 2.9 mm) were found on SOR. Overall sensitivity for nodule detection by ultralow dose CT was 91%. In multivariate analysis, nodule type, size and patients BMI were independent predictors for sensitivity (p < 0.001). Ultralow dose chest CT at 100 kV with spectral shaping enables a high sensitivity for the detection of pulmonary nodules at exposure levels comparable to plain film chest X-ray. (orig.)
-
Optimization Design and Performance Analysis of a Pit Turbine with Ultralow Head
Directory of Open Access Journals (Sweden)
Chunxia Yang
2014-04-01
Full Text Available A developed pit turbine with ultralow head was optimization designed under the design head of about 2 meters to achieve the goal of improving the turbine unit's efficiency. At the same time, the turbine's synthetic characteristic curve was drawn to predict the turbine's overall performance. Navier-Stokes equations and SIMPLEC algorithm were used for pit turbine's whole flow passage numerical simulation of the 3D, steady, incompressible, turbulent flow field. Through the CFD numerical simulation, the influence to ultralow head turbine's performance was analyzed by runner blade's different setting angles and guide vane's different axes. Considering the hydraulic performance of various methods, the best blade's setting angle and guide vane's axis were chosen. The results show that, the turbine unit has the best performance on efficiency, hydraulic loss, and so forth, with the blade's setting angle 23° and the angle 72° between the guide vane and the centerline of unit, meeting the power station's design requirements. The development pit turbine with ultralow head shows the highest efficiency of 87.6% under condition of design head of 2.1 meters and design discharge of 10 m3/s. The energy performance of pit turbine with ultralow head was researched by the model test of GD-WS-35 turbine. The model turbine's characteristic curve was drawn. The model turbine's high efficiency area is wide and the efficiency changes mildly. The numerical simulation results are essentially consistent with the model test results, while the former one is slightly higher than the latter one. The error range is ±3%.
-
Physics with ultra-low energy antiprotons
International Nuclear Information System (INIS)
Holtkamp, D.B.; Holzscheiter, M.H.; Hughes, R.J.
1989-01-01
The experimental observation that all forms of matter experience the same gravitational acceleration is embodied in the weak equivalence principle of gravitational physics. However no experiment has tested this principle for particles of antimatter such as the antiproton or the antihydrogen atom. Clearly the question of whether antimatter is in compliance with weak equivalence is a fundamental experimental issue, which can best be addressed at an ultra-low energy antiproton facility. This paper addresses the issue. 20 refs
-
Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing
International Nuclear Information System (INIS)
Frigerio, J; Ballabio, A; Isella, G; Gallacher, K; Millar, R; Paul, D; Gilberti, V; Baldassarre, L; Ortolani, M; Milazzo, R; Napolitani, E; Maiolo, L; Minotti, A; Pecora, A; Bottegoni, F; Biagioni, P
2017-01-01
High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8 × 10 19 cm −3 has been achieved starting from an incorporated phosphorous concentration of 1.1 × 10 20 cm −3 . Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved. (paper)
-
Defect-induced luminescence in sol-gel silica samples doped with Co(II) at different concentrations
Energy Technology Data Exchange (ETDEWEB)
Jimenez-Sandoval, S. [Centro de Investigacion y Estudios Avanzados, Queretaro, Apdo. Postal 1-798, Queretaro, Qro. 76001 (Mexico); Estevez, M. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico); Pacheco, S. [Instituto Mexicano del Petroleo, Av. 100 metros (Mexico); Vargas, S. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico); Rodriguez, R. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico)], E-mail: rogelior@servidor.unam.mx
2007-12-20
The defect-induced luminescence properties of silica samples prepared by the sol-gel method and doped with Co(II) are reported. Silica monoliths doped with different concentrations of Co(II) were laser irradiated (He-Ne 632.8 nm) producing fluorescence. However, this fluorescence is exponentially reduced with the irradiation time, to practically disappear. The rate the fluorescence decays can be well modeled with a double exponential function of the irradiation time, containing two different relaxation times; a baseline is also required to take into account some residual fluorescence. The characteristic times involved in this luminescence quenching process are in the range of seconds. This luminescence suppression can be associated to the local heating produced by the laser irradiation when focused in a small area (2 {mu}m in diameter) on the sample. This heating process reduces physical (grain boundaries, surface states) and chemical (oxygen vacancies produced by the dopant) defects in the sample.
-
Energy Technology Data Exchange (ETDEWEB)
Akbari, S. [Laboratory for Tribology and Interface Nanotechnology, University of Ljubljana, Ljubljana (Slovenia); Kovač, J. [Jozef Stefan Institute, Jamova 19, 1000 Ljubljana (Slovenia); Kalin, M., E-mail: mitjan.kalin@tint.fs.uni-lj.si [Laboratory for Tribology and Interface Nanotechnology, University of Ljubljana, Ljubljana (Slovenia)
2016-10-15
Highlights: • The effect of the ZDDP concentrations onto the steel, H-DLC and Si-DLC surfaces is investigated. • ZDDP film structure on the DLC coatings is different from steel. • Different concentrations of ZDDP do not affect the final chemical structure of the ZDDP film on any of the studied surfaces. • The thickness of the thermal film is linear with the concentration for a given surface. • The reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings. - Abstract: This work focuses on the ZDDP concentration (1, 5 and 20 wt%) to form a ZDDP film on surfaces during static thermal tests at 150 °C. Silicon-doped and hydrogenated DLC coatings, as well as steel as reference, were studied using Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The results show that, on the three surfaces, the structure of the ZDDP thermal film consists of identical groups of pyrophosphate and zinc oxide, while the sulphuric groups are dissimilar. On the steel surface, the sulphuric part consists of a mixture of organic sulphide and sulphohydryl groups, but on H-DLC and Si-DLC only organic sulphide groups are found; there are no sulphohydryl groups. Moreover, both ATR-FTIR and XPS show that different concentrations of ZDDP do not affect the final chemical structure of the ZDDP thermal film on any of the studied surfaces. In addition, the XPS results show that the thickness of the thermal film is linear with the concentration for the whole range from 1 to 20 wt%, supporting also its uniform chemical structure. These thicknesses further show that the reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings.
-
Hooper, James; Ismail, Arif; Giorgi, Javier B.; Woo, Tom K.
2010-06-01
A genetic algorithm (GA)-inspired method to effectively map out low-energy configurations of doped metal oxide materials is presented. Specialized mating and mutation operations that do not alter the identity of the parent metal oxide have been incorporated to efficiently sample the metal dopant and oxygen vacancy sites. The search algorithms have been tested on lanthanide-doped ceria (L=Sm,Gd,Lu) with various dopant concentrations. Using both classical and first-principles density-functional-theory (DFT) potentials, we have shown the methodology reproduces the results of recent systematic searches of doped ceria at low concentrations (3.2% L2O3 ) and identifies low-energy structures of concentrated samarium-doped ceria (3.8% and 6.6% L2O3 ) which relate to the experimental and theoretical findings published thus far. We introduce a tandem classical/DFT GA algorithm in which an inexpensive classical potential is first used to generate a fit gene pool of structures to enhance the overall efficiency of the computationally demanding DFT-based GA search.
-
International Nuclear Information System (INIS)
Damm, J.Z.; Stepien-Damm, J.
1980-01-01
The changes of lattice parameter and colour centre concentration are examined in KCl crystals (both pure and Me 2+ -doped) irradiated by γ-rays at room temperature. For the pure crystals the relative volume change vs. F-centre concentration plot reveals the presence of two stages, one ascribed to the introduction of colour centre pairs (or F centres only) and other to the generation of new dislocations (or new dislocations with trapped-hole centres). In Me 2+ doped crystals the lattice expansion bears a complex character (in the initial irradiation stage a transient maximum appears). Additional anomaly appears in Eu 2+ KCl in the high-dose range where in spite of a distinct F-centre concentration drop a marked raise of the lattice parameter is observed. (author)
-
Magnetic behavior of Co–Mn co-doped ZnO nanoparticles
International Nuclear Information System (INIS)
Li, Hengda; Liu, Xinzhong; Zheng, Zhigong
2014-01-01
Here, we report on systematic studies of the magnetic properties of Co and Mn co-doped ZnO nanoparticles prepared by a sol–gel technique. The effect of the concentration of the doping ions on the magnetic properties of Co and Mn co-doped ZnO nanoparticles is presented. X-ray diffraction characterizations (XRD) of co-doped ZnO nanoparticles are all wurtzite structure. The Zn 0.96 Co 0.02 Mn 0.02 O nanoparticles and Zn 0.94 Co 0.02 Mn 0.04 O nanoparticles display ferromagnetic behavior at room temperature. Superconducting quantum interference device (SQUID) magnetometer figures show that with the concentration of the Mn ions increased, the saturation magnetic moment (M s ) increased, and the magnetic is probably due to the co-doping of the Mn ions. Our results demonstrate that the Mn ions doping concentration play an important role in the ferromagnetic properties of Co–Mn co-doped ZnO nanoparticles at room temperature. - Highlights: • The effect of the doping ions on the magnetic properties is presented. • The magnetic is probably due to the co-doping of the Mn ions. • The Mn ions concentration play an important role in the ferromagnetic properties
-
Bezerra Dias, Hércules; Teixeira Carrera, Emanuelle; Freitas Bortolatto, Janaína; Ferrarezi de Andrade, Marcelo; Nara de Souza Rastelli, Alessandra
2016-01-01
Since low concentration bleaching agents containing N-doped TiO2 nanoparticles have been introduced as an alternative to conventional agents, it is important to verify their efficacy and the hypersensitivity effect in clinical practice. Six volunteer patients were evaluated for color change and hypersensitivity after bleaching using 35% H2O2 (one session of two 12 min applications) and 6% H2O2/N-doped TiO2 (one session of three 12 min applications) and after low level laser therapy application (LLLT) (780 nm, 40 mW, 10 J.cm-2, 10 s). Based on this case study, the nanobleaching agent provided better or similar aesthetic results than the conventional agent under high concentration, and its association with LLLT satisfactorily decreased the hypersensitivity. The 6% H2O2/N-doped TiO2 agent could be used instead of conventional in-office bleaching agents under high concentrations to fulfill the rising patient demand for aesthetics.
-
International Nuclear Information System (INIS)
Al-Khawaja, S.; Kasem, M.
2008-07-01
The dc and ac electric conductivity has been studied for numerous samples of molybdenum oxide MoO 3 doped with niobium oxide Nb 2 O 5 elaborated via the solid state reactions. By means of the electric resistivity and dielectricity curves obtained as a function of temperature, and according to the dopant concentration, the behaviour of these compounds has been allocated. Most of the investigated samples, which are insulating at room temperature, have been witnessed to exhibit simultaneously two different electric comportments; metallic and semiconducting within the range of low and high temperatures respectively, designated by a critical temperature related to the nature of the material. Both of these behaviours are attributed electronically to ionic conduction mechanism, occurring in the solid material formed upon doping with Nb 2 O 5 , which is utterly diffused into the layered structure of MoO 3 particularly for x≥40% concentrations and accompanied by relaxation in the dielectric function between 5 Hz and 13 M Hz.(Authors)
-
Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi
2018-04-01
Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.
-
Progress on erbium-doped waveguide components
DEFF Research Database (Denmark)
Bjarklev, Anders Overgaard; Berendt, Martin Ole; Broeng, Jes
1997-01-01
The recent development in erbium-doped fiber amplifiers, and fiber lasers is reviewed. Also the latest results on planar erbium-doped waveguide amplifiers and high erbium concentration characterisation methods are presented...
-
Electrical transport characterization of Al and Sn doped Mg 2 Si thin films
Zhang, Bo
2017-05-22
Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.
-
International Nuclear Information System (INIS)
Shirke, A.K.; Pode, R.B.; Deshmukh, B.T.
1996-01-01
Photodecomposition of pure and doped KI powder (KI:KOH; KI:KCN; Impurity concentration, 100, 300, 500, 700 and 1000 ppm) to produce free I 2 molecules during gamma irradiation is studied with the help of absorption and IR measurements. Large number of I 2 molecules are formed in pure KI as compared to the doped samples. Hydroxide impurity increases the rate of liberation of I 2 molecules whereas the cyanide impurity decreases the rate of liberation of I 2 molecules. (Author)
-
Effect of CTAB concentration on synthesis of nickel doped manganese oxide nanoparticles
Shobana, R.; Saravanakumar, B.; Ravi, G.; Yuvakkumar, R.
2018-05-01
In this work the effect of concentration of cetyltrimethylammonium bromide (CTAB) in the synthesis of Nickel doped Manganese oxide (Ni-MnO2) nanoparticles have been carried out by adopting the sol-gel process. The synthesized products were characterized by XRD, Infra- Red (FTIR) and SEM analysis. The XRD confirms the formation of Ni-MnO2 nanoparticles illustrate peak at 31.4° with lattice plane (-231). The IR spectra correspond to the peak at 592 and 846 cm-1 attributed to the characteristics peak for Ni-MnO2 nanoparticles. The SEM images for all three Ni-MnO2 nanoparticles for different concentration of CTAB allows us to assess the formation route of nano tentacles from 10 mM, 30 mM and 50 mM. The configured nano tentacles of Ni-MnO2 nanoparticles presumably leads to more significantly change its properties, particularly in its electrochemical properties show the ways to be suitable candidates for supercapacitor, battery, photo catalytic and fuel cell applications.
-
Energy Technology Data Exchange (ETDEWEB)
Namma, Haydar Aboud; Wagiran, H.; Hussin, R.; Ariwahjoedi, B. [Department of Physics, Universiti Teknologi Malaysia, Skudai 81310, Malaysia and Baghdad College of Economic Sciences University (Iraq); Fundamental and Applied Sciences Department, Universiti Teknologi PETRONAS, 31750 Tronoh (Malaysia)
2012-09-26
The SnO{sub 2} co-doped lithium potassium borate glasses doped with 0.05, 0.10, 0.25 and 0.50 mol% of Cu were synthesized by the melt quenching technique. The SnO{sub 2} co-dope was added to the compounds in the amounts of 0.05, 0.10, and 0.20 mol%. The photoluminescent spectrum for different concentrations of copper was studied. It was observed that the intensity of blue emission (450, 490 nm) varies with concentration mol%. In addition, with different concentration of SnO{sub 2} to 0.10 mol% Cu, the influence of the luminescence has been observed to enhance intensity and shifted to blue and red (490, 535 nm) emissions.
-
Messerli, Michael; Ottilinger, Thorsten; Warschkow, René; Leschka, Sebastian; Alkadhi, Hatem; Wildermuth, Simon; Bauer, Ralf W
2017-06-01
To determine whether ultralow dose chest CT with tin filtration can be used for emphysema quantification and lung volumetry and to assess differences in emphysema measurements and lung volume between standard dose and ultralow dose CT scans using advanced modeled iterative reconstruction (ADMIRE). 84 consecutive patients from a prospective, IRB-approved single-center study were included and underwent clinically indicated standard dose chest CT (1.7±0.6mSv) and additional single-energy ultralow dose CT (0.14±0.01mSv) at 100kV and fixed tube current at 70mAs with tin filtration in the same session. Forty of the 84 patients (48%) had no emphysema, 44 (52%) had emphysema. One radiologist performed fully automated software-based pulmonary emphysema quantification and lung volumetry of standard and ultralow dose CT with different levels of ADMIRE. Friedman test and Wilcoxon rank sum test were used for multiple comparison of emphysema and lung volume. Lung volumes were compared using the concordance correlation coefficient. The median low-attenuation areas (LAA) using filtered back projection (FBP) in standard dose was 4.4% and decreased to 2.6%, 2.1% and 1.8% using ADMIRE 3, 4, and 5, respectively. The median values of LAA in ultralow dose CT were 5.7%, 4.1% and 2.4% for ADMIRE 3, 4, and 5, respectively. There was no statistically significant difference between LAA in standard dose CT using FBP and ultralow dose using ADMIRE 4 (p=0.358) as well as in standard dose CT using ADMIRE 3 and ultralow dose using ADMIRE 5 (p=0.966). In comparison with standard dose FBP the concordance correlation coefficients of lung volumetry were 1.000, 0.999, and 0.999 for ADMIRE 3, 4, and 5 in standard dose, and 0.972 for ADMIRE 3, 4 and 5 in ultralow dose CT. Ultralow dose CT at chest X-ray equivalent dose levels allows for lung volumetry as well as detection and quantification of emphysema. However, longitudinal emphysema analyses should be performed with the same scan protocol and
-
Ultra-low energy storage ring at FLAIR
International Nuclear Information System (INIS)
Welsch, Carsten P.; Papash, A. I.; Gorda, O.; Harasimowicz, J.; Karamyshev, O.; Karamysheva, G.; Newton, D.; Panniello, M.; Putignano, M.; Siggel-King, M. R. F.; Smirnov, A.
2012-01-01
The Ultra-low energy electrostatic Storage Ring (USR) at the future Facility for Low-energy Antiproton and Ion Research (FLAIR) will provide cooled beams of antiprotons in the energy range between 300 keV down to 20 keV and possibly less. The USR has been completely redesigned over the past three years. The ring structure is based on a “split achromat” lattice that allows in-ring experiments with internal gas jet target. Beam parameters might be adjusted in a wide range: from very short pulses in the nanosecond regime to a Coasting beam. In addition, a combined fast and slow extraction scheme was developed that allows for providing external experiments with cooled beams of different time structure. Detailed investigations of the USR, including studies into the ring’s long term beam dynamics, life time, equilibrium momentum spread and equilibrium lateral spread during collisions with an internal target were carried out. New tools and beam handling techniques for diagnostics of ultra-low energy ions at beam intensities less than 10 6 were developed by the QUASAR Group. In this paper, progress on the USR project will be presented with an emphasis on the expected beam parameters available to the experiments at FLAIR.
-
Radiation effect of doping and bias conditions on NPN bipolar junction transistors
International Nuclear Information System (INIS)
Xi Shanbin; Wang Yiyuan; Xu Fayue; Zhou Dong; Li Ming; Wang Fei; Wang Zhikuan; Yang Yonghui; Lu Wu
2011-01-01
In this paper,we investigate 60 Co γ-ray irradiation effects and annealing behaviors of NPN bipolar junction transistors of the same manufacturing technology but different doping concentrations. The transistors of different doping concentrations differ in responses of the radiation effect. More degradation was observed with the transistors of low concentration-doped NPN transistors than the high concentration-doped NPN transistors. The results also demonstrate that reverse-biased transistors are more sensitive to radiation than the forward-biased ones. Mechanisms of the radiation responses are analyzed. (authors)
-
Growth and laser action of Yb: YVO4 crystals with low Yb doping concentration
Zhong, Degao; Teng, Bing; Li, Jianhong; Zhang, Shiming; Zhang, Bingtao; Wang, Chao; Tian, Xueping; Liu, Junhai
2012-11-01
Yb: YVO4 single crystals with low doping concentrations of Yb3+ less than 0.3 at% were grown using the Czochralski method. The polarized absorption spectra were measured at room temperature. Strong anisotropy exists in the absorption spectra, resulting in almost entirely different features for π-polarization and σ-polarization. The laser emission spectrum and relationship curve between the output power and absorbed pump power (Pabs) were measured. The continuous-wave laser action of Yb: YVO4 single crystal in a range of 1020.4-1026.3 nm was realized by using a high-power diode laser as the pump source.
-
Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.
2017-12-01
Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.
-
Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.
The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.
-
Electroplating method for producing ultralow-mass fissionable deposits
International Nuclear Information System (INIS)
Ruddy, F.H.
1989-01-01
A method for producing ultralow-mass fissionable deposits for nuclear reactor dosimetry is described, including the steps of holding a radioactive parent until the radioactive parent reaches secular equilibrium with a daughter isotope, chemically separating the daughter from the parent, electroplating the daughter on a suitable substrate, and holding the electroplated daughter until the daughter decays to the fissionable deposit
-
Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.
2016-03-01
The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.
-
Rajakarthikeyan, R. K.; Muthukumaran, S.
2017-07-01
ZnO, Zn0.96Mn0.04O and Ni-doped Zn0.96Mn0.04O nanoparticles with different Ni concentrations (0%, 2% and 4%) have been synthesized successfully by sol-gel method. The effects of Ni doping on the structural and optical properties were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectroscopy. The XRD pattern confirmed the existence of single phase wurtzite-like hexagonal structure throughout the Ni concentrations without any additional phases. The substitution of Ni created the lattice distortion due to the disparity of ionic radius between Zn and Ni which reduced the crystallite size. The microscopic images showed that the size of ZnO nanoparticles reduced by Ni-doping while the shape remains almost spherical/hexagonal type. The electrical conductivity found to be maximum at Ni = 2% due to the availability of more charge carriers generated by Ni. The decrease of electrical conductivity at higher doping (Ni = 4%) is due to the fact that the generation of more defects. The enhanced band gap from 3.73 eV (Ni = 0%) to 3.79 eV (Ni = 4%) by the addition of Ni explained by Burstein-Moss effect. The change in infra-red (IR) intensity and full width at half maximum (FWHM) corresponding to the frequency around defect states were caused by the difference in the bond lengths that occurs when Ni ion replaces Zn ion. The observed blue band emission from 474 nm to 481 nm is due to a radiative transition of an electron from the deep donar level of Zni to an acceptor level of neutral VZn and the origin of green band may be due to oxygen vacancies and intrinsic defects. The tuning of the band gap and the visible emission bands by Ni doping concluded that Ni-doped Zn0.96Mn0.04O is suitable for various nano-photo-electronics applications.
-
Ultra-low Temperature Curable Conductive Silver Adhesive with different Resin Matrix
Zhou, Xingli; Wang, Likun; Liao, Qingwei; Yan, Chao; Li, Xing; Qin, Lei
2018-03-01
The ultra-low temperature curable conductive silver adhesive with curing temperature less than 100 °C needed urgently for the surface conductive treatment of piezoelectric composite material due to the low thermal resistance of composite material and low adhesion strength of adhesive. An ultra-low temperature curable conductive adhesive with high adhesion strength was obtained for the applications of piezoelectric composite material. The microstructure, conductive properties and adhesive properties with different resin matrix were investigated. The conductive adhesive with AG-80 as the resin matrix has the shorter curing time (20min), lower curing temperature (90°C) and higher adhesion strength (7.6MPa). The resistivity of AG-80 sample has the lower value (2.13 × 10-4Ω·cm) than the 618 sample (4.44 × 10-4Ω·cm).
-
Effect of Boron Doping on High-Resolution X-Ray Diffraction Metrology
Faheem, M.; Zhang, Y.; Dai, X.
2018-03-01
The effect of boron (B) doping on high-resolution X-ray diffraction (HXRD) metrology has been investigated. Twelve samples of Si1-xGex films were epitaxially grown on Si (100) substrates with different thicknesses, germanium (Ge) concentrations and with/without B dopants. Secondary ion mass spectroscopy (SIMS) and HXRD were employed for measurements of B doping, Ge concentration, strain, and thickness of the layers. The SIMS results show the absence of B in two samples while the rest of the samples have B doping in the range of 8.40 × 1018-8.7 × 1020 atoms/cm3 with Ge concentration of 13.3-55.2 at.%. The HXRD measurements indicate the layers thickness of 7.07-108.13 nm along with Ge concentration of 12.82-49.09 at.%. The difference in the Ge concentration measured by SIMS and HXRD was found to deend on B doping. For the undoped samples, the difference is 0.5 at.% and increases with B doping but with no linear proportionality. The difference in the Ge concentration was 7.11 at.% for the highly B-doped (8.7 × 1020 atoms/cm3) sample. The B doping influences the Si1-xGex structure, causing a change in the lattice parameter and producing tensile strains shifting Si1-xGex peaks towards Si (100) substrate peaks in the HXRD diffraction patterns. As a result, Vegard's law is no longer effective and makes a high impact on the HXRD measurement. The comparison between symmetric (004) and asymmetric (+113, +224) reciprocal space mappings (RSM) showed a slight difference in Ge concentration between the undoped and lower B-doped samples. However, there is a change of 0.21 at.% observed for the highly doped Si1-xGex samples. RSM's (+113) demonstrate the small SiGe peak broadening as B doping increases, which indicates a minor crystal distortion.
-
Ultra-Low Noise Germanium Neutrino Detection system (ULGeN).
Energy Technology Data Exchange (ETDEWEB)
Cabrera-Palmer, Belkis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Barton, Paul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
2017-07-01
Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detector with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.
-
Ultra-Low Noise Germanium Neutrino Detection system (ULGeN)
International Nuclear Information System (INIS)
Cabrera-Palmer, Belkis; Barton, Paul
2017-01-01
Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detector with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.
-
Application of nanostructured Ca doped CeO2 for ultraviolet filtration
International Nuclear Information System (INIS)
Truffault, Laurianne; Ta, Minh-Tri; Devers, Thierry; Konstantinov, Konstantin; Harel, Valerie; Simmonard, Cyriaque; Andreazza, Caroline; Nevirkovets, Ivan P.; Pineau, Alain; Veron, Olivier; Blondeau, Jean-Philippe
2010-01-01
Calcium doped CeO 2 nanoparticles with doping concentrations between 0 and 50 mol% were synthesized by a co-precipitation method for ultraviolet filtration application. Below 20 mol% doping concentration, the samples were single-phase. From 30 mol%, CaCO 3 appears as a secondary phase. The calculated CeO 2 mean crystallite size was 9.3 nm for the pure and 5.7 nm for the 50 mol% Ca-doped sample. Between 250 and 330 nm, the absorbance increased for the 10, 30, and 40 mol% Ca-doped samples compared to the pure one. The band-gap was found to be 3.20 eV for the undoped, and between 3.36 and 3.51 eV for the doped samples. The blue shifts are attributed to the quantum confinement effect. X-ray photoelectron spectroscopy showed that the Ce 3+ atomic concentration in the pure sample was higher than that of the 20 mol% Ca-doped sample.
-
Spectroscopic properties of highly Nd-doped lead phosphate glass
Energy Technology Data Exchange (ETDEWEB)
Novais, A.L.F. [Instituto de Física, Universidade Federal de Alagoas, Grupo de Fotônica e Fluidos Complexos, 57072-970 Maceió, AL (Brazil); Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Guedes, I. [Departamento de Física, Universidade Federal do Ceará, Campus do PICI, Caixa Postal 6030, 60455-760 Fortaleza, CE (Brazil); Vermelho, M.V.D., E-mail: vermelho@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Grupo de Fotônica e Fluidos Complexos, 57072-970 Maceió, AL (Brazil)
2015-11-05
The spectroscopic characteristics of highly Nd{sup 3+}-doped lead phosphate glasses (xNd:Pb{sub 3}(PO{sub 4}){sub 2}) have been investigated. The X-ray spectra show that the matrices are glassy up to 25 wt% of Nd{sup 3+} doping. From the Judd–Ofelt analysis we observe that while the Ω{sub (2)} parameter remains constant indicating that the 4f{sup N} and 4f{sup N−1}5 d{sup 1} configurations are not affected by the Nd{sup 3+} doping, the behavior of both Ω{sub (4)} and Ω{sub (6)} changes for 15 wt% of Nd{sup 3+} doping. The reduction of the Ω{sub (6)} parameter is related to the increase of the covalence bonding between the ligands and the Nd{sup 3+} ions. At this particular concentration, the radiative lifetime has a four-fold enhancement. Such behaviors are likely to be related to a modification in the glass structure for high Nd{sup 3+} concentrations. - Graphical abstract: Highly doped lead-phosphate glass matrix, with nominal concentration of up to 25 wt%, maintain the spectroscopic properties without deterioration. The analysis concerning the point of view of Nd{sup 3+} ions showed that high concentrations only affects the rare earth electronic charge density distribution. - Highlights: • Spectroscopic characterization of Nd{sub 2}O{sub 3} highly doped lead phosphate glasses. • Phosphate glass doped with Nd{sup 3+} for applications in photonic devices. • Judd–Ofelt analysis in phosphate glasses doped with Neodymium.
-
An ultra-low power output capacitor-less low-dropout regulator with slew-rate-enhanced circuit
Cheng, Xin; Zhang, Yu; Xie, Guangjun; Yang, Yizhong; Zhang, Zhang
2018-03-01
An ultra-low power output-capacitorless low-dropout (LDO) regulator with a slew-rate-enhanced (SRE) circuit is introduced. The increased slew rate is achieved by sensing the transient output voltage of the LDO and then charging (or discharging) the gate capacitor quickly. In addition, a buffer with ultra-low output impedance is presented to improve line and load regulations. This design is fabricated by SMIC 0.18 μm CMOS technology. Experimental results show that, the proposed LDO regulator only consumes an ultra-low quiescent current of 1.2 μA. The output current range is from 10 μA to 200 mA and the corresponding variation of output voltage is less than 40 mV. Moreover, the measured line regulation and load regulation are 15.38 mV/V and 0.4 mV/mA respectively. Project supported by the National Natural Science Foundation of China (Nos. 61401137, 61404043, 61674049).
-
Porous allograft bone scaffolds: doping with strontium.
Directory of Open Access Journals (Sweden)
Yantao Zhao
Full Text Available Strontium (Sr can promote the process of bone formation. To improve bioactivity, porous allograft bone scaffolds (ABS were doped with Sr and the mechanical strength and bioactivity of the scaffolds were evaluated. Sr-doped ABS were prepared using the ion exchange method. The density and distribution of Sr in bone scaffolds were investigated by inductively coupled plasma optical emission spectrometry (ICP-OES, X-ray photoelectron spectroscopy (XPS, and energy-dispersive X-ray spectroscopy (EDS. Controlled release of strontium ions was measured and mechanical strength was evaluated by a compressive strength test. The bioactivity of Sr-doped ABS was investigated by a simulated body fluid (SBF assay, cytotoxicity testing, and an in vivo implantation experiment. The Sr molar concentration [Sr/(Sr+Ca] in ABS surpassed 5% and Sr was distributed nearly evenly. XPS analyses suggest that Sr combined with oxygen and carbonate radicals. Released Sr ions were detected in the immersion solution at higher concentration than calcium ions until day 30. The compressive strength of the Sr-doped ABS did not change significantly. The bioactivity of Sr-doped material, as measured by the in vitro SBF immersion method, was superior to that of the Sr-free freeze-dried bone and the Sr-doped material did not show cytotoxicity compared with Sr-free culture medium. The rate of bone mineral deposition for Sr-doped ABS was faster than that of the control at 4 weeks (3.28 ± 0.23 µm/day vs. 2.60 ± 0.20 µm/day; p<0.05. Sr can be evenly doped into porous ABS at relevant concentrations to create highly active bone substitutes.
-
Neutron transmutation doped Ge bolometers
Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.
1983-01-01
Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.
-
Optoelectronic properties of doped hydrothermal ZnO thin films
Mughal, Asad J.
2017-03-10
Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.
-
Structure prediction of boron-doped graphene by machine learning
M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji
2018-06-01
Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.
-
Doping process of p-type GaN nanowires: A first principle study
Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu
2017-10-01
The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.
-
Chen, Manfang; Jiang, Shouxin; Huang, Cheng; Wang, Xianyou; Cai, Siyu; Xiang, Kaixiong; Zhang, Yapeng; Xue, Jiaxi
2017-04-22
Honeycomb-like nitrogen and sulfur dual-doped hierarchical porous biomass-derived carbon/sulfur composites (NSHPC/S) are successfully fabricated for high energy density lithium-sulfur batteries. The effects of nitrogen, sulfur dual-doping on the structures and properties of the NSHPC/S composites are investigated in detail by transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and charge/discharge tests. The results show that N, S dual-doping not only introduces strong chemical adsorption and provides more active sites but also significantly enhances the electronic conductivity and hydrophilic properties of hierarchical porous biomass-derived carbon, thereby significantly enhancing the utilization of sulfur and immobilizing the notorious polysulfide shuttle effect. Especially, the as-synthesized NSHPC-7/S exhibits high initial discharge capacity of 1204 mA h g -1 at 1.0 C and large reversible capacity of 952 mA h g -1 after 300 cycles at 0.5 C with an ultralow capacity fading rate of 0.08 % per cycle even at high sulfur content (85 wt %) and high active material areal mass loading (2.8 mg cm -2 ) for the application of high energy density Li-S batteries. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
-
Concentration dependent luminescence quenching of Er{sup 3+}-doped zinc boro-tellurite glass
Energy Technology Data Exchange (ETDEWEB)
Said Mahraz, Zahra Ashur; Sahar, M.R., E-mail: mrahim057@gmail.com; Ghoshal, S.K.; Reza Dousti, M.
2013-12-15
Understanding the mechanism of luminescence quenching in rare earth doped tellurite glass is an important issue. The Er{sup 3+}-doped boro-tellurite glasses with compositions 30B{sub 2}O{sub 3}+10ZnO+(60−x)TeO{sub 2}+xEr{sub 2}O{sub 3} (where x=0, 0.5, 1, 1.5 and 2 mol%) were prepared by melt quenching method. Structural and optical properties of the proposed glasses were characterized using XRD, FTIR, density, UV–vis-IR absorption and PL spectroscopy. The amorphous nature of these glasses was confirmed by XRD technique. The IR-spectrum reveals five absorption bands assigned to different B–O and Te–O vibrational groups. UV–vis-IR absorption spectrum exhibits seven absorption bands at 6553, 10,244, 12,547, 15,360, 19,230, 20,661 and 22,522 cm{sup −1} corresponding to {sup 4}I{sub 13/2}, {sup 4}I{sub 11/2}, {sup 4}I{sub 9/2}, {sup 4}F{sub 9/2}, {sup 2}H{sub 11/2}, {sup 4}F{sub 7/2} and {sup 4}F{sub 3/2} excited states of Er{sup 3+} ion respectively. The optical band gap energy (E{sub opt}) corresponding to the direct and indirect allowed transitions decreased, while the Urbach energy and cut-off wavelengths are increased by the introduction of Er{sup 3+} ions. The refractive index, density and phonon cut-off edge of the samples are increased and the molar volume decreased with the further addition of dopants. The Judd–Ofelt parameter (Ω{sub 2}) decreased from 5.73 to 3.13×10{sup −20} cm{sup 2} with the increase of erbium ions concentration from 0.5 to 2 mol%. The PL spectra show green emissions for the transition from {sup 2}H{sub 11/2} and {sup 4}S{sub 3/2} excited states to {sup 4}I{sub 15/2} ground state, which show strong quenching due to the addition of Er{sup 3+} ions. -- Highlights: • Er{sup 3+}-doped zinc boro-tellurite glass has been synthesized by melt quench method. • Spectroscopic properties dependent concentration is analyzed by different techniques. • Judd–Ofelt intensity parameter (Ω{sub 2}) decreased by increase in erbium
-
Energy Technology Data Exchange (ETDEWEB)
Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)
2017-01-15
ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.
-
International Nuclear Information System (INIS)
Kim, Byunggu; Leem, Jae-Young
2017-01-01
ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.
-
Jabeen, Uzma; Adhikari, Tham; Shah, Syed Mujtaba; Pathak, Dinesh; Wagner, Tomas; Nunzi, Jean-Michel
2017-06-01
Zinc sulphide (ZnS) and Cu-doped ZnS nanoparticles were synthesized by the wet chemical method. The nanoparticles were characterized by UV-visible, fluorescence, fourier transform infra-red (FTIR) spectrometry, X-ray diffraction (XRD), X-ray photoelectron spectrometry (XPS), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM). Scanning electron microscopy supplemented with EDAX was employed to observe the morphology and chemical composition of the un-doped and doped samples. A significant blue shift of the absorption band with respect to the un-doped zinc sulphide was sighted by increasing the Cu concentration in the doped sample with decreasing the size of nanoparticles. Consequently, the band gap was tuned from 3.13 to 3.49 eV due to quantum confinement. The green emission arises from the recombination between the shallow donor level (sulfur vacancy) and the t2 level of Cu2+. However, the fluorescence emission spectrum of the undoped ZnS nanoparticles was deconvoluted into two bands, which are centered at 419 and 468 nm. XRD analysis showed that the nanomaterials were in cubic crystalline state. XRD peaks show that there were no massive crystalline distortions in the crystal lattice when the Cu concentration (0.05-0.1 M) was increased in the ZnS lattice. However, in the case of Cu-doped samples (0.15-0.2 M), the XRD pattern showed an additional peak at 37° due to incomplete substitution occurring during the experimental reaction step. A comparative study of surfaces of undoped and Cu-doped ZnS nanoparticles were investigated using X-ray photoelectron spectroscopy (XPS). The synthesized nanomaterial in combination with poly(3-hexylthiophene) (P3HT) was used in the fabrication of solar cells. The devices with ZnS nanoparticles showed an efficiency of 0.31%. The overall power conversion efficiency of the solar cells at 0.1 M Cu content in doped ZnS nanoparticles was found to be 1.6 times higher than the
-
Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors
International Nuclear Information System (INIS)
Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.
2006-01-01
We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature
-
Directory of Open Access Journals (Sweden)
A. Costescu
2013-01-01
Full Text Available The aim of this study was the evaluation of (Ca10-xAgx(PO46(OH2 nanoparticles (Ag:HAp-NPs for their antibacterial and antifungal activity. Resistance to antimicrobial agents by pathogenic bacteria has emerged in the recent years as a major public health problem worldwide. In this paper, we report a comparison of the antimicrobial activity of low concentrations silver-doped hydroxyapatite nanoparticles. The silver-doped nanocrystalline hydroxyapatite powder was synthesized at 100°C in deionised water. The as-prepared Ag:Hap nanoparticles were characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, FT-IR, and FT-Raman spectroscopy. X-ray diffraction (XRD studies demonstrate that powders obtained by coprecipitation at 100°C exhibit the apatite characteristics with good crystal structure, without any new phase or impurities found. FT-IR and FT-Raman spectroscopy revealed the presence of the various vibrational modes corresponding to phosphates and hydroxyl groups and the absence of any band characteristic to silver. The specific microbiological assays demonstrated that Ag:HAp-NPs exhibited antimicrobial features, but interacted differently with the Gram-positive, Gram-negative bacterial and fungal tested strains.
-
Thermal conductivity and heat transport properties of nitrogen-doped graphene.
Goharshadi, Elaheh K; Mahdizadeh, Sayyed Jalil
2015-11-01
In the present study, the thermal conductivity (TC) and heat transport properties of nitrogen doped graphene (N-graphene) were investigated as a function of temperature (107-400K) and N-doped concentration (0.0-7.0%) using equilibrium molecular dynamics simulation based on Green-Kubo method. According to the results, a drastic decline in TC of graphene observed at very low N-doped concentration (0.5 and 1.0%). Substitution of just 1.0% of carbon atoms with nitrogens causes a 77.2, 65.4, 59.2, and 53.7% reduction in TC at 107, 200, 300, and 400K, respectively. The values of TC of N-graphene at different temperatures approach to each other as N-doped concentration increases. The results also indicate that TC of N-graphene is much less sensitive to temperature compared with pristine graphene and the sensitivity decreases as N-doped concentration increases. The phonon-phonon scattering relaxation times and the phonon mean free path of phonons were also calculated. The contribution of high frequency optical phonons for pristine graphene and N-graphene with 7.0% N-doped concentration is 0-2% and 4-8%, respectively. These findings imply that it is potentially feasible to control heat transfer on the nanoscale when designing N-graphene based thermal devices. Copyright © 2015 Elsevier Inc. All rights reserved.
-
Ultralow friction of ink-jet printed graphene flakes.
Buzio, R; Gerbi, A; Uttiya, S; Bernini, C; Del Rio Castillo, A E; Palazon, F; Siri, A S; Pellegrini, V; Pellegrino, L; Bonaccorso, F
2017-06-08
We report the frictional response of few-layer graphene (FLG) flakes obtained by the liquid phase exfoliation (LPE) of pristine graphite. To this end, we inkjet print FLG on bare and hexamethyldisilazane-terminated SiO 2 substrates, producing micrometric patterns with nanoscopic roughness that are investigated by atomic force microscopy. Normal force spectroscopy and atomically-resolved morphologies indicate reduced surface contamination by solvents after a vacuum annealing process. Notably, the printed FLG flakes show ultralow friction comparable to that of micromechanically exfoliated graphene flakes. Lubricity is retained on flakes with a lateral size of a few tens of nanometres, and with a thickness as small as ∼2 nm, confirming the high crystalline quality and low defects density in the FLG basal plane. Surface exposed step edges exhibit the highest friction values, representing the preferential sites for the origin of the secondary dissipative processes related to edge straining, wear or lateral displacement of the flakes. Our work demonstrates that LPE enables fundamental studies on graphene friction to the single-flake level. The capability to deliver ultralow-friction-graphene over technologically relevant substrates, using a scalable production route and a high-throughput, large-area printing technique, may also open up new opportunities in the lubrication of micro- and nano-electromechanical systems.
-
Two dimensional tunable photonic crystals and n doped semiconductor materials
International Nuclear Information System (INIS)
Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.
2015-01-01
In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications
-
Highly doped layer for tunnel junctions in solar cells
Fetzer, Christopher M.
2017-08-01
A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.
-
Dopant controlled trap-filling and conductivity enhancement in an electron-transport polymer
Energy Technology Data Exchange (ETDEWEB)
Higgins, Andrew, E-mail: aehiggin@princeton.edu, E-mail: kahn@princeton.edu; Kahn, Antoine, E-mail: aehiggin@princeton.edu, E-mail: kahn@princeton.edu [Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544-5263 (United States); Mohapatra, Swagat K.; Barlow, Stephen; Marder, Seth R. [Center for Organic Photonics and Electronics and School of Chemistry and Biochemistry, Georgia Institute of Technology, Atlanta, Georgia 30332-0400 (United States)
2015-04-20
Charge transport in organic semiconductors is often inhibited by the presence of tail states that extend into the band gap of a material and act as traps for charge carriers. This work demonstrates the passivation of acceptor tail states by solution processing of ultra-low concentrations of a strongly reducing air-stable organometallic dimer, the pentamethylrhodocene dimer, [RhCp*Cp]{sub 2}, into the electron transport polymer poly([N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide) -2,6-diyl]-alt-5,5′-(2,2′-bithiophene)), P(NDI{sub 2}OD-T{sub 2}). Variable-temperature current-voltage measurements of n-doped P(NDI{sub 2}OD-T{sub 2}) are presented with doping concentration varied through two orders of magnitude. Systematic variation of the doping parameter is shown to lower the activation energy for hopping transport and enhance film conductivity and electron mobility.
-
Synthesis of Antimony Doped Amorphous Carbon Films
Okuyama, H.; Takashima, M.; Akasaka, H.; Ohtake, N.
2013-06-01
We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.
-
Synthesis of Antimony Doped Amorphous Carbon Films
International Nuclear Information System (INIS)
Okuyama, H; Takashima, M; Akasaka, H; Ohtake, N
2013-01-01
We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp 2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.
-
International Nuclear Information System (INIS)
Mekasuwandumrong, Okorn; Tantichuwet, Panutin; Chaisuk, Choowong; Praserthdam, Piyasan
2008-01-01
Solvothermal reaction of 20 g aluminum isopropoxide (AIP) in mineral oil at 300 deg. C for 2 h gave χ-alumina showing high thermal stability while the reaction with higher amounts of starting AIP (30 and 40 g) contributed contamination of pseudoboehmite. The χ-alumina thus obtained directly transformed into α-alumina completely at approximately 1400 deg. C bypassing the other transition alumina phases whereas some part of the contaminated product transformed to γ-alumina through θ-alumina and finally α-alumina. When silicon was doped in the alumina matrix (5, 10, 20 and 50 at.%) using tetraethylorthosilicate as the silicon (Si) precursor, χ-alumina was still observed without any contaminations at low concentration doping (5-20 at.%). Amorphous structure was obtained by doping 50 at.% Si. The phase transformation temperature was shifted to the high temperature after loading the Si. The α-phase transformation did not go to completion even after calcinations at 1500 deg. C. This could be due to the incorporation of Si atom in alumina lattice forming SiO 2 -Al 2 O 3 solid solution
-
Effect of Diluent on Ultra-low Temperature Curable Conductive Silver Adhesive
Zhou, Xingli; Wang, Likun; Liao, Qingwei; Yan, Chao; Du, Haibo; Qin, Lei
2018-03-01
The ultra-low temperature curable conductive silver adhesive needed urgently for the surface conductive treatment of piezoelectric composite material. The effect of diluent acetone on ultra-low temperature curable conductive silver adhesive were investigated for surface conductive treatment of piezoelectric composite material. In order to improve the operability and extend the life of the conductive adhesive, the diluent was added to dissolve and disperse conductive adhesive. With the increase of the content of diluent, the volume resistivity of conductive adhesive decreased at first and then increased, and the shear strength increased at first and then decreased. When the acetone content is 10%, the silver flaky bonded together, arranged the neatest, the smallest gap, the most closely connected, the surface can form a complete conductive network, and the volume resistivity is 2.37 × 10-4Ω · cm, the shear strength is 5.13MPa.
-
First-principles study on electronic structures and magnetic properties of Eu-doped phosphorene
Luan, Zhaohui; Zhao, Lei; Chang, Hao; Sun, Dan; Tan, Changlong; Huang, Yuewu
2017-11-01
The structural, electronic and magnetic properties of Eu-doped phosphorene with different doping concentrations were investigated by first-principles calculations for the first time. The calculations show that Eu-doped phosphorene systems are stable and have the large magnetic moments of more than 6 μB by 2.7, 6.25 and 12.5 at.% doping concentrations. The major contribution to the magnetic moment stems from the 4f states of Eu-doped atom. Meanwhile, Eu-doped atom introduces the impurity bands which can be changed by different doping concentrations. In order to determine the magnetic interaction, the different configurations for two Eu atoms doping in 3 × 3 × 1 phosphorene supercell were studied, which reveals that all of the configurations tend to form ferromagnetic. These results can provide references for inducing large magnetism of two-dimensional phosphorene, which are valuable for their applications in spintronic devices and novel semiconductor materials.
-
Doping dependence of magnetic and transport properties in single crystalline Co-doped BaFe2As2
International Nuclear Information System (INIS)
Nakajima, Yasuyuki; Taen, Toshihiro; Tamegai, Tsuyoshi
2010-01-01
We report the doping dependence of transport and magnetic properties in Co-doped BaFe 2 As 2 . With increasing Co concentration x, structural and magnetic transitions are suppressed and superconductivity emerges in the range of 0.3 c at low temperatures and low fields obtained from bulk magnetization is reasonably large and the doping dependence shows a maximum at x∼0.07 similar to T c . The values of J c at low temperatures reach about 1x10 6 A/cm 2 around the optimally doped region, which is potentially attractive for technological applications.
-
Energy Technology Data Exchange (ETDEWEB)
Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Rocha, U. [Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Brazil; Guedes, Ilde [Universidade Federal do Ceara, Ceara, Brazil; Vermelho, M. V. D. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil; Boatner, Lynn A [ORNL; Jacinto, C. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil
2012-01-01
In this work, we have used the thermal lens technique combined with conventional spectroscopy to characterize the thermo-optical properties of Er3+-doped lead pyrophosphate-based glasses. More precisely, we have investigated and quantified experimentally the fluorescence quantum efficiencies of the Er3+ levels, and we describe the role of concentration quenching effects. The fluorescence quantum efficiency of the 4I13/2 level is very high when compared to other phosphate glasses, while that of the green-coupled levels is very small. Other important photonic materials parameters, such as the thermal diffusivity and temperature coefficient of the optical path length change, were obtained and compared with those of other glass systems. The cumulative results obtained here for the Er-doped lead pyrophosphate glass show that this material is a good candidate for photonic applications with a characteristic Er3+ infrared emission around 1550 nm.
-
Ultra-low friction and excellent elastic recovery of fullerene-like ...
Indian Academy of Sciences (India)
2017-08-24
Aug 24, 2017 ... a high elastic recovery (∼90%), ultra-low friction coefficient (∼0.019) and low wear rate ... Y Meng et al .... [3] Liu D G, Tu J P, Gu C D, Hong C F, Chen R and Yang W S ... [7] Cumings J and Zettl A 2000 Science 289 602.
-
Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter
DEFF Research Database (Denmark)
Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco
2016-01-01
contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours......In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main...
-
Performance enhancement of polymer Schottky diode by doping pentacene
International Nuclear Information System (INIS)
Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan
2009-01-01
Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.
-
Liu, Peisong; Niu, Liyong; Li, Xiaohong; Zhang, Zhijun
2017-12-01
The super-hydrophobic silica nanoparticles are applied to alter the wettability of rock surface from water-wet to oil-wet. The aim of this is to reduce injection pressure so as to enhance water injection efficiency in low permeability reservoirs. Therefore, a new type of environmentally responsive nanosilica (denote as ERS) is modified with organic compound containing hydrophobic groups and "pinning" groups by covalent bond and then covered with a layer of hydrophilic organic compound by chemical adsorption to achieve excellent water dispersibility. Resultant ERS is homogeneously dispersed in water with a size of about 4-8 nm like a micro-emulsion system and can be easily injected into the macro or nano channels of ultra-low permeability reservoirs. The hydrophobic nanosilica core can be released from the aqueous delivery system owing to its strong dependence on the environmental variation from normal condition to injection wells (such as pH and salinity). Then the exposed silica nanoparticles form a thin layer on the surface of narrow pore throat, leading to the wettability from water-wet to oil-wet. More importantly, the two rock cores with different permeability were surface treated with ERS dispersion with a concentration of 2 g/L, exhibit great reduce of water injection pressure by 57.4 and 39.6%, respectively, which shows great potential for exploitation of crude oil from ultra-low permeability reservoirs during water flooding. [Figure not available: see fulltext.
-
Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons
Guo, Caixia; Xia, Congxin; Wang, Tianxing; Liu, Yufang
2017-03-01
By using a combined method of density functional theory and non-equilibrium Green’s function formalism, we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons (APNRs). The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal. Meanwhile, obvious negative differential resistance (NDR) behaviors are obtained by tuning the doping position and concentration. In particular, with reducing doping concentration, NDR peak position can enter into mV bias range. These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs. Project supported by the National Natural Science Foundation of China (No. 11274096), the University Science and Technology Innovation Team Support Project of Henan Province (No. 13IRTSTHN016), the University key Science Research Project of Henan Province (No.16A140043). The calculation about this work was supported by the High Performance Computing Center of Henan Normal University.
-
First principles calculation of lithium-phosphorus co-doped diamond
Directory of Open Access Journals (Sweden)
Q.Y. Shao
2013-03-01
Full Text Available We calculate the density of states (DOS and the Mulliken population of the diamond and the co-doped diamonds with different concentrations of lithium (Li and phosphorus (P by the method of the density functional theory, and analyze the bonding situations of the Li-P co-doped diamond thin films and the impacts of the Li-P co-doping on the diamond conductivities. The results show that the Li-P atoms can promote the split of the diamond energy band near the Fermi level, and improve the electron conductivities of the Li-P co-doped diamond thin films, or even make the Li-P co-doped diamond from semiconductor to conductor. The affection of Li-P co-doping concentration on the orbital charge distributions, bond lengths and bond populations is analyzed. The Li atom may promote the split of the energy band near the Fermi level and also may favorably regulate the diamond lattice distortion and expansion caused by the P atom.
-
Electron field emission from boron doped microcrystalline diamond
International Nuclear Information System (INIS)
Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.
2007-01-01
Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm
-
High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals
Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.
2018-05-01
Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.
-
Collisional quenching at ultralow energies: controlling efficiency with internal state selection.
Bovino, S; Bodo, E; Gianturco, F A
2007-12-14
Calculations have been carried out for the vibrational quenching of excited H(2) molecules which collide with Li(+) ions at ultralow energies. The dynamics has been treated exactly using the well-known quantum coupled-channel expansions over different initial vibrational levels. The overall interaction potential has been obtained from the calculations carried out earlier by our group using highly correlated ab initio methods. The results indicate that specific features of the scattering observables, e.g., the appearance of Ramsauer-Townsend minima in elastic channel cross sections and the marked increase of the cooling rates from specific initial states, can be linked to potential properties at vanishing energies (sign and size of scattering lengths) and to the presence of either virtual states or bound states. The suggestion is made such that by selecting the initial state preparation of the molecular partners, the ionic interactions would be amenable to controlling quenching efficiency at ultralow energies.
-
Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application
International Nuclear Information System (INIS)
Kulanthaivel, Senthilguru; Roy, Bibhas; Agarwal, Tarun; Giri, Supratim; Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S.; Maiti, Tapas K.; Banerjee, Indranil
2016-01-01
ABSTRACT: The present study delineates the synthesis and characterization of cobalt doped proangiogenic–osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co"2"+) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP–OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic–osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. - Highlights: • Cobalt (Co"+"2) doped hydroxyapatite (Co-HAp) can be prepared by the wet chemical method. • The concentration of Co"+"2 influences the physico-chemical properties of HAp. • Co-HAp was found to be biocompatible and osteogenic. • Co-HAp enhanced cellular VEGF secretion through HIF-1α stabilization. • The optimum biological performance of Co-HAp was achieved for 0.33% (w/w) Co"+"2 doping.
-
Doping optimization of polypyrrole with toluenesulfonic acid using Box-Behnken design
International Nuclear Information System (INIS)
Syed Draman, Sarifah Fauziah; Daik, Rusli; El-Sheikh, Said M.; Latif, Famiza Abdul
2013-01-01
A three-level Box-Behnken design was employed in doping optimization of polypyrrole with toluenesulfonic acid (TSA-doped PPy). The material was synthesized via chemical oxidative polymerization using pyrrole, toluenesulfonic acid (TSA) and ammonium persulfate (APS) as monomer, dopant and oxidant, respectively. The critical factors selected for this study were concentration of dopant, molar ratio between dopant to monomer (pyrrole) and concentration of oxidant. Obtaining adequate doping level of TSA-doped PPy is crucial because it affects the charge carriers for doped PPy and usually be responsible for electronic mobility along polymeric chain. Furthermore, the doping level also affects other properties such as electrical and thermal conductivity. Doping level was calculated using elemental analysis. SEM images shows that the prepared TSA-doped PPy particles are spherical in shape with the diameters of about. The range of nanoparticles size is around 80-100 nm. The statistical analysis based on a Box–Behnken design showed that 0.01 mol of TSA, 1:1 mole ratio TSA to pyrrole and 0.25 M APS were the optimum conditions for sufficient doping level
-
Doping optimization of polypyrrole with toluenesulfonic acid using Box-Behnken design
Energy Technology Data Exchange (ETDEWEB)
Syed Draman, Sarifah Fauziah; Daik, Rusli [School of Chemical Sciences and Food Technology, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); El-Sheikh, Said M. [Nanostructured Materials and Nanotechnology Division, Central Metallurgical Research and Development Institute,11421 Cairo (Egypt); Latif, Famiza Abdul [Faculty of Applied Sciences, Universiti Teknologi MARA Malaysia 40450 Shah Alam, Selangor (Malaysia)
2013-11-27
A three-level Box-Behnken design was employed in doping optimization of polypyrrole with toluenesulfonic acid (TSA-doped PPy). The material was synthesized via chemical oxidative polymerization using pyrrole, toluenesulfonic acid (TSA) and ammonium persulfate (APS) as monomer, dopant and oxidant, respectively. The critical factors selected for this study were concentration of dopant, molar ratio between dopant to monomer (pyrrole) and concentration of oxidant. Obtaining adequate doping level of TSA-doped PPy is crucial because it affects the charge carriers for doped PPy and usually be responsible for electronic mobility along polymeric chain. Furthermore, the doping level also affects other properties such as electrical and thermal conductivity. Doping level was calculated using elemental analysis. SEM images shows that the prepared TSA-doped PPy particles are spherical in shape with the diameters of about. The range of nanoparticles size is around 80-100 nm. The statistical analysis based on a Box–Behnken design showed that 0.01 mol of TSA, 1:1 mole ratio TSA to pyrrole and 0.25 M APS were the optimum conditions for sufficient doping level.
-
Directory of Open Access Journals (Sweden)
Tony T. Kim
2011-07-01
Full Text Available Recently, double-gate MOSFETs (DGMOSFETs have been shown to be more optimal for ultra-low power circuit design due to the improved subthreshold slope and the reduced leakage current compared to bulk CMOS. However, DGMOSFETs for subthreshold circuit design have not been much explored in comparison to those for strong inversion-based design. In this paper, various configurations of DGMOSFETs, such as tied/independent gates and symmetric/asymmetric gate oxide thickness are explored for ultra-low power and high efficient radio frequency identification (RFID design. Comparison of bulk CMOS with DGMOSFETs has been conducted in ultra-low power subthreshold digital logic design and rectifier design, emphasizing the scope of the nano-scale DGMOSFET technology for future ultra-low power systems. The DGMOSFET-based subthreshold logic improves energy efficiency by more than 40% compared to the bulk CMOS-based logic at 32 nm. Among the various DGMOSFET configurations for RFID rectifiers, symmetric tied-gate DGMOSFET has the best power conversion efficiency and the lowest power consumption.
-
Hole-induced d"0 ferromagnetism enhanced by Na-doping in GaN
International Nuclear Information System (INIS)
Zhang, Yong; Li, Feng
2017-01-01
The d"0 ferromagnetism in wurtzite GaN is investigated by the first-principle calculations. It is found that spontaneous magnetization occurs if sufficient holes are injected in GaN. Both Ga vacancy and Na doping can introduce holes into GaN. However, Ga vacancy has a high formation energy, and is thus unlikely to occur in a significant concentration. In contrast, Na doping has relatively low formation energy. Under N-rich growth condition, Na doping with a sufficient concentration can be achieved, which can induce half-metallic ferromagnetism in GaN. Moreover, the estimated Curie temperature of Na-doped GaN is well above the room temperature. - Highlights: • Hole-induced ferromagnetism in GaN is confirmed. • Both Ga Vacancy and Na-doping can introduce hole into GaN. • The concentration of Ga vacancy is too low to induce detectable ferromagnetism. • Na-doped GaN is a possible ferromagnet with a high curie-temperature.
-
Disorder-induced enhancement of conductance in doped nanowires
Institute of Scientific and Technical Information of China (English)
Xu Ning; Wang Bao-Lin; Sun Hou-Qian; Kong Fan-Jie
2010-01-01
A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.
-
Measuring and analyzing excitation-induced decoherence in rare-earth-doped optical materials
International Nuclear Information System (INIS)
Thiel, C W; Macfarlane, R M; Cone, R L; Sun, Y; Böttger, T; Sinclair, N; Tittel, W
2014-01-01
A method is introduced for quantitatively analyzing photon echo decay measurements to characterize excitation-induced decoherence resulting from the phenomenon of instantaneous spectral diffusion. Detailed analysis is presented that allows fundamental material properties to be extracted that predict and describe excitation-induced decoherence for a broad range of measurements, applications and experimental conditions. Motivated by the need for a method that enables systematic studies of ultra-low decoherence systems and direct comparison of properties between optical materials, this approach employs simple techniques and analytical expressions that avoid the need for difficult to measure and often unknown material parameters or numerical simulations. This measurement and analysis approach is demonstrated for the 3 H 6 to 3 H 4 optical transition of three thulium-doped crystals, Tm 3+ :YAG, Tm 3+ :LiNbO 3 and Tm 3+ :YGG, that are currently employed in quantum information and classical signal processing demonstrations where minimizing decoherence is essential to achieve high efficiencies and large signal bandwidths. These new results reveal more than two orders of magnitude variation in sensitivity to excitation-induced decoherence among the materials studied and establish that the Tm 3+ :YGG system offers the longest optical coherence lifetimes and the lowest levels of excitation-induced decoherence yet observed for any known thulium-doped material. (paper)
-
Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications
DEFF Research Database (Denmark)
Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei
2015-01-01
Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....
-
Doped silicene: Evidence of a wide stability range
Cheng, Yingchun
2011-06-17
The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright © 2011 EPLA.
-
A programmable ultra-low noise X-band exciter.
MacMullen, A; Hoover, L R; Justice, R D; Callahan, B S
2001-07-01
A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.
-
Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect
Energy Technology Data Exchange (ETDEWEB)
Sharma, Dhananjay K., E-mail: dhananjay@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Fateixa, Sara [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Hortigüela, María J. [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Vidyasagar, Reddithota [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Otero-Irurueta, Gonzalo [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Nogueira, Helena I.S. [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Singh, Manoj Kumar [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Kholkin, Andrei, E-mail: kholkin@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg (Russian Federation)
2017-05-15
Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 µm in thickness exhibits higher defect density (1.86×10{sup 12} cm{sup −2}) as compared to both 10 and 25 µm thick substrates (1.23×10{sup 12} cm{sup −2} and 3.09×10{sup 11} cm{sup −2}, respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms ~0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at ~24° is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 µm ones. This is important for tailoring the properties by graphene required for microelectronic applications.
-
type doping in the channel of graphene nanoribbon
Indian Academy of Sciences (India)
type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the n -type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and p ...
-
Liu, Yong-Biao
2005-12-01
The aphid Nasonovia ribisnigri (Mosley) is a common pest of lettuce in the United States. It hinders export of U.S. lettuce to the overseas market such as Japan where it is a quarantined pest. Ultralow oxygen treatments were studied for control of the insect on iceberg lettuce. Small-scale ultralow oxygen treatments in plastic jars were conducted at 1, 5, and 10 degrees C for different durations to determine effective treatment against nymphs and alates of N. ribisnigri. At oxygen levels of 0.015-0.025%, N. ribisnigri can be controlled in 3 d at 1 degrees C, 2 d at 5 degrees C, and 1 d at 10 degrees C. Large-scale ultralow oxygen treatments were conducted in bulk container treatment chambers with commercial iceberg lettuce heads for 2 d at 6 degrees C with oxygen levels of 0.015 and 0.025% and for 3 d at 3 degrees C with oxygen level of 0.015%. All treatments achieved complete control of N. ribisnigri. No negative impact on lettuce quality was detected after 2 wk of posttreatment storage. Therefore, the selected treatments have potential to be commercially developed for postharvest control of N. ribisnigri on iceberg lettuce.
-
Hammond, Emily; Sloan, Chelsea; Newell, John D; Sieren, Jered P; Saylor, Melissa; Vidal, Craig; Hogue, Shayna; De Stefano, Frank; Sieren, Alexa; Hoffman, Eric A; Sieren, Jessica C
2017-09-01
Quantitative computed tomography (CT) measures are increasingly being developed and used to characterize lung disease. With recent advances in CT technologies, we sought to evaluate the quantitative accuracy of lung imaging at low- and ultralow-radiation doses with the use of iterative reconstruction (IR), tube current modulation (TCM), and spectral shaping. We investigated the effect of five independent CT protocols reconstructed with IR on quantitative airway measures and global lung measures using an in vivo large animal model as a human subject surrogate. A control protocol was chosen (NIH-SPIROMICS + TCM) and five independent protocols investigating TCM, low- and ultralow-radiation dose, and spectral shaping. For all scans, quantitative global parenchymal measurements (mean, median and standard deviation of the parenchymal HU, along with measures of emphysema) and global airway measurements (number of segmented airways and pi10) were generated. In addition, selected individual airway measurements (minor and major inner diameter, wall thickness, inner and outer area, inner and outer perimeter, wall area fraction, and inner equivalent circle diameter) were evaluated. Comparisons were made between control and target protocols using difference and repeatability measures. Estimated CT volume dose index (CTDIvol) across all protocols ranged from 7.32 mGy to 0.32 mGy. Low- and ultralow-dose protocols required more manual editing and resolved fewer airway branches; yet, comparable pi10 whole lung measures were observed across all protocols. Similar trends in acquired parenchymal and airway measurements were observed across all protocols, with increased measurement differences using the ultralow-dose protocols. However, for small airways (1.9 ± 0.2 mm) and medium airways (5.7 ± 0.4 mm), the measurement differences across all protocols were comparable to the control protocol repeatability across breath holds. Diameters, wall thickness, wall area fraction
-
International Nuclear Information System (INIS)
Sahare, P.D.; Singh, Manveer; Kumar, Pratik
2015-01-01
Nanocrystalline samples of Mn-doped CaF 2 were synthesized by chemical coprecipitation method. The impurity concentration was varied in the range of 0.5–4.0 mol%. The structure of the synthesized material was confirmed using powder XRD analysis. TEM images of the nanoparticles show their size occurring mostly in the range of 35–40 nm, with clusters of some impurity phases formed on annealing of the material at higher temperatures. Detailed studies on TL showed that the structures of glow curves depend on Mn concentrations and annealing temperatures. Optimization of the concentration and annealing temperature showed that the sample (doped with 3.0 mol% and annealed at 673 K) has almost a single dosimetric glow peak appearing at around 492 K. EPR and PL spectra were further studied to understand the reasons for changes in the glow curve structures. All detailed studies on TL, PL and EPR showed that the changes in glow curve structures are caused not only by the stress connected with the difference in ionic radii of host Ca 2+ and the guest impurity Mn 3+ /Mn 2+ , but are also governed by other reasons, like diffusion of atmospheric oxygen and formation of impurity aggregates, such as, MnO 2 , Mn 3 O 4 , etc. This is true not only for nanocrystalline CaF 2 :Mn but could also be so for the bulk CaF 2 :Mn (TLD-400) and would thus help in understanding complex glow curve structure, high fading and the loss of reusability on annealing beyond 673 K. - Highlights: • Nanocrystalline material CaF 2 :Mn is prepared by simple coprecipitation method. • The material is studied by XRD, TEM, ESR, TL and PL techniques. • High impurity concentrations give rise to clusters causing material instability. • Changes in ESR and PL and glow curve structures are studied and explained. • Better characteristics than the bulk make the nanophosphor useful for dosimetry
-
Ultra-low energy electrons from fast heavy-ion helium collisions: the `target Cusp`
Energy Technology Data Exchange (ETDEWEB)
Schmitt, W. [Freiburg Univ. (Germany)]|[Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Moshammer, R.; Kollmus, H.; Ullrich, J. [Freiburg Univ. (Germany); O`Rourke, F.S.C. [Queen`s Univ., Belfast, Northern Ireland (United Kingdom); Sarkadi, L. [Magyar Tudomanyos Akademia, Debrecen (Hungary). Atommag Kutato Intezete; Mann, R. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Hagmann, S. [Kansas State Univ., Manhattan, KS (United States). J.R. MacDonald Lab.; Olson, R.E. [Missouri Univ., Rolla, MO (United States). Dept. of Physics
1998-09-01
Doubly differential cross sections d{sup 2}{sigma}/dv {sub parallel} dv {sub perpendicular} {sub to} have been obtained by mapping the 3-dimensional velocity space of ultra-low and low-energy electrons (1.5 meV{<=} E{sub e}{<=}100 eV) emitted in singly ionizing 3.6 MeV/u Au{sup 53+} on helium collisions. A sharp ({Delta}E{sub e} {sub perpendicular} {sub to} {sup FWHM} {<=} 22 meV) asymmetric peak centered at vertical stroke anti {nu} vertical stroke =0 is observed to emerge at ultra-low energies from the strongly forward shifted low-energy electron velocity distribution. The shape of this ``target cusp``, which is very sensitive on the details of the two-center potential, is in excellent accord with theoretical CTMC and CDW-EIS predictions. (orig.)
-
Energy Technology Data Exchange (ETDEWEB)
Huber, Adrian [University Hospital Inselspital Bern, Department of Diagnostic, Interventional and Paediatric Radiology, Bern (Switzerland); University Hospital Pitie-Salpetriere, Department of Polyvalent and Oncological Radiology, Paris (France); Landau, Julia; Buetikofer, Yanik; Leidolt, Lars; Brela, Barbara; May, Michelle; Heverhagen, Johannes; Christe, Andreas [University Hospital Inselspital Bern, Department of Diagnostic, Interventional and Paediatric Radiology, Bern (Switzerland); Ebner, Lukas [University Hospital Inselspital Bern, Department of Diagnostic, Interventional and Paediatric Radiology, Bern (Switzerland); Duke University Medical Center, Department of Radiology, Durham, NC (United States)
2016-10-15
To investigate the detection rate of pulmonary nodules in ultralow-dose CT acquisitions. In this lung phantom study, 232 nodules (115 solid, 117 ground-glass) of different sizes were randomly distributed in a lung phantom in 60 different arrangements. Every arrangement was acquired once with standard radiation dose (100 kVp, 100 references mAs) and once with ultralow radiation dose (80 kVp, 6 mAs). Iterative reconstruction was used with optimized kernels: I30 for ultralow-dose, I70 for standard dose and I50 for CAD. Six radiologists examined the axial 1-mm stack for solid and ground-glass nodules. During a second and third step, three radiologists used maximum intensity projection (MIPs), finally checking with computer-assisted detection (CAD), while the others first used CAD, finally checking with the MIPs. The detection rate was 95.5 % with standard dose (DLP 126 mGy*cm) and 93.3 % with ultralow-dose (DLP: 9 mGy*cm). The additional use of either MIP reconstructions or CAD software could compensate for this difference. A combination of both MIP reconstructions and CAD software resulted in a maximum detection rate of 97.5 % with ultralow-dose. Lung cancer screening with ultralow-dose CT using the same radiation dose as a conventional chest X-ray is feasible. (orig.)
-
High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals
Energy Technology Data Exchange (ETDEWEB)
Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah
2018-05-08
Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.
-
Van Thuyne, W; Delbeke, F T
2006-09-01
Caffeine concentrations were measured in the urine of 4633 athletes tested for doping control in the Ghent Doping Control Laboratory in 2004. Determination of these concentrations was done using an alkaline extraction with a mixture of dichloromethane and methanol (9 : 1; v/v) followed by high performance liquid chromatography and ultraviolet detection (HPLC-UV). The method was validated according to ISO 17 025 standards (International Organisation for Standardisation). Quantification was done by using a linear calibration curve in the range from 0 to 20 microg/ml. The limit of quantification (LOQ) was 0.10 microg/ml. Because the results were not normally distributed, transformation of the data was done to evaluate the difference in detected concentrations in several sports. This resulted in an overall average concentration of 1.12 +/- 2.68 microg/ml. Comparison of the most frequently tested sports in 2004 demonstrated that caffeine concentrations in samples originating from power lifters are significantly higher in comparison to urines taken in other sports. Also, a significant difference between caffeine concentrations found in cycling and concentrations found in other sports, including athletics and some ball sports, was observed. A comparison was made between results obtained in 2004 and results obtained before the removal of caffeine from the WADA (World Anti-Doping Agency) doping list indicating that average caffeine concentrations decreased after the withdrawal of caffeine from the list of prohibited substances. The overall percentage of positive samples between the two periods remained the same although the percentage of positive samples noticed in cycling increased after the removal of caffeine from the doping list.
-
Security Implications for Ultra-Low Power Configurable SoC FPAA Embedded Systems
Directory of Open Access Journals (Sweden)
Jennifer Hasler
2018-06-01
Full Text Available We discuss the impact of physical computing techniques to classifying network security issues for ultra-low power networked IoT devices. Physical computing approaches enable at least a factor of 1000 improvement in computational energy efficiency empowering a new generation of local computational structures for embedded IoT devices. These techniques offer computational capability to address network security concerns. This paper begins the discussion of security opportunities for, and issues using, FPAA devices for small embedded IoT platforms. These FPAAs enable devices often utilized for low-power context aware computation. Embedded FPAA devices have both positive Security attributes, as well as potential vulnerabilities. FPAA devices can be part of the resulting secure computation, such as implementing unique functions. FPAA devices can be used investigate security of analog/mixed signal capabilities. The paper concludes with summarizing key improvements for secure ultra-low power embedded FPAA devices.
-
Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method
Directory of Open Access Journals (Sweden)
Yi-Dong Luo
2013-01-01
Full Text Available Ni1−xFexO nanofibers with different Fe doping concentration have been synthesized by electrospinning method. An analysis of the phase composition and microstructure shows that Fe doping has no influence on the crystal structure and morphology of NiO nanofibers, which reveals that the doped Fe ions have been incorporated into the NiO host lattice. Pure NiO without Fe doping is antiferromagnetic, yet all the Fe-doped NiO nanofiber samples show obvious room-temperature ferromagnetic properties. The saturation magnetization of the nanofibers can be enhanced with increasing Fe doping concentration, which can be ascribed to the double exchange mechanism through the doped Fe ions and free charge carriers. In addition, it was found that the diameter of nanofibers has significant impact on the ferromagnetic properties, which was discussed in detail.
-
Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application
Energy Technology Data Exchange (ETDEWEB)
Kulanthaivel, Senthilguru [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Roy, Bibhas [Department of Biotechnology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Agarwal, Tarun [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Giri, Supratim [Department of Chemistry, National Institute of Technology, Rourkela, Odisha 769008 (India); Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S. [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Maiti, Tapas K. [Department of Biotechnology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Banerjee, Indranil, E-mail: indraniliit@gmail.com [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India)
2016-01-01
ABSTRACT: The present study delineates the synthesis and characterization of cobalt doped proangiogenic–osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co{sup 2+}) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP–OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic–osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. - Highlights: • Cobalt (Co{sup +2}) doped hydroxyapatite (Co-HAp) can be prepared by the wet chemical method. • The concentration of Co{sup +2} influences the physico-chemical properties of HAp. • Co-HAp was found to be biocompatible and osteogenic. • Co-HAp enhanced cellular VEGF secretion through HIF-1α stabilization. • The optimum biological performance of Co-HAp was achieved for 0.33% (w/w) Co{sup +2} doping.
-
DEFF Research Database (Denmark)
Hostrup, Morten; Kalsen, Anders; Hemmersbach, Peter
2012-01-01
and a-hydroxysalmeterol during visits one and two were 12.6 and 21.8%, respectively. The intra-individual variability of salmeterol and a-hydroxysalmeterol in the urine concentrations were significantly higher when uncorrected for USG with 43.0 and 43.7% versus 20.4% (p...Since 2010, the World Anti-Doping Agency (WADA) has introduced urinary thresholds for some beta2-agonists. In doping analysis urine samples of beta2-agonists are not corrected for the Urine Specific Gravity (USG) by the WADA laboratories. Several studies have observed high differences in the urine...
-
Study of doping non-PMMA polymer fibre canes with UV photosensitive compounds
DEFF Research Database (Denmark)
Hassan, Hafeez Ul; Fasano, Andrea; Janting, Jakob
2016-01-01
and hollow-core TOPAS canes were doped with a solution of dopants in acetone/methanol and hexane/methanol, respectively. Doping time, solvent mixture concentration and doping temperature were optimised. A long and stepwise drying process was applied to the doped canes to ensure complete solvent removal...
-
On compensation in Si-doped AlN
Harris, Joshua S.; Baker, Jonathon N.; Gaddy, Benjamin E.; Bryan, Isaac; Bryan, Zachary; Mirrielees, Kelsey J.; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.
2018-04-01
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+n SiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.
-
Magnetic properties of Fe-doped organic-inorganic nanohybrids
Silva, N. J. O.; Amaral, V. S.; Carlos, L. D.; de Zea Bermudez, V.
2003-05-01
We present a magnetic study of Fe-doped diureasils (siloxane-based networks to which poly(ethylene oxide)-based chains are grafted by urea cross linkages doped with Fe(II) or Fe(III) ions. Structural studies show that the Fe(II) ions interact mainly with the organic chain, whereas the incorporation of Fe(III) leads to the formation of iron-based nanoclusters, with radius increasing from 20 to 40 Å. Fe(II)-doped samples behave as simple paramagnets, with μeff=5.32μB. Fe(III)-doped hybrids present antiferromagnetic interactions, with TN increasing with Fe(III) concentration up to 13.6 K for 6% doping. Thermal irreversibility was observed below ˜40 K and is stronger for higher concentrations. The coercive fields (HC) are of the order of 1000 Oe at 5 K. Hysteresis cycles are shifted to negative fields, revealing the presence of exchange anisotropy interactions with exchange fields (HE) of the order of 100 Oe. Both fields decrease rapidly with increasing temperature. We analyze this behavior in terms of the contribution of surface spin disorder to exchange anisotropy.
-
Bischel, Alexander; Stratis, Andreas; Kakar, Apoorv; Bosmans, Hilde; Jacobs, Reinhilde; Gassner, Eva-Maria; Puelacher, Wolfgang; Pauwels, Ruben
2016-01-01
Objective: The aim of this study was to evaluate whether application of ultralow dose protocols and iterative reconstruction technology (IRT) influence quantitative Hounsfield units (HUs) and contrast-to-noise ratio (CNR) in dentomaxillofacial CT imaging. Methods: A phantom with inserts of five types of materials was scanned using protocols for (a) a clinical reference for navigated surgery (CT dose index volume 36.58 mGy), (b) low-dose sinus imaging (18.28 mGy) and (c) four ultralow dose imaging (4.14, 2.63, 0.99 and 0.53 mGy). All images were reconstructed using: (i) filtered back projection (FBP); (ii) IRT: adaptive statistical iterative reconstruction-50 (ASIR-50), ASIR-100 and model-based iterative reconstruction (MBIR); and (iii) standard (std) and bone kernel. Mean HU, CNR and average HU error after recalibration were determined. Each combination of protocols was compared using Friedman analysis of variance, followed by Dunn's multiple comparison test. Results: Pearson's sample correlation coefficients were all >0.99. Ultralow dose protocols using FBP showed errors of up to 273 HU. Std kernels had less HU variability than bone kernels. MBIR reduced the error value for the lowest dose protocol to 138 HU and retained the highest relative CNR. ASIR could not demonstrate significant advantages over FBP. Conclusions: Considering a potential dose reduction as low as 1.5% of a std protocol, ultralow dose protocols and IRT should be further tested for clinical dentomaxillofacial CT imaging. Advances in knowledge: HU as a surrogate for bone density may vary significantly in CT ultralow dose imaging. However, use of std kernels and MBIR technology reduce HU error values and may retain the highest CNR. PMID:26859336
-
Energy Technology Data Exchange (ETDEWEB)
El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering
2008-08-15
The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.
-
Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser
Das, Ayan
2011-08-01
We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.
-
Photoluminescence of phosphorus atomic layer doped Ge grown on Si
Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd
2017-10-01
Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.
-
Neutron transmutation doping of gallium arsenide
International Nuclear Information System (INIS)
Alexiev, D.
1987-12-01
Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated
-
Advances in highly doped upconversion nanoparticles.
Wen, Shihui; Zhou, Jiajia; Zheng, Kezhi; Bednarkiewicz, Artur; Liu, Xiaogang; Jin, Dayong
2018-06-20
Lanthanide-doped upconversion nanoparticles (UCNPs) are capable of converting near-infra-red excitation into visible and ultraviolet emission. Their unique optical properties have advanced a broad range of applications, such as fluorescent microscopy, deep-tissue bioimaging, nanomedicine, optogenetics, security labelling and volumetric display. However, the constraint of concentration quenching on upconversion luminescence has hampered the nanoscience community to develop bright UCNPs with a large number of dopants. This review surveys recent advances in developing highly doped UCNPs, highlights the strategies that bypass the concentration quenching effect, and discusses new optical properties as well as emerging applications enabled by these nanoparticles.
-
Pure and Sn-doped ZnO films produced by pulsed laser deposition
DEFF Research Database (Denmark)
Holmelund, E.; Schou, Jørgen; Tougaard, S.
2002-01-01
A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...
-
Boron/nitrogen pairs Co-doping in metallic carbon nanotubes: a first-principle study
International Nuclear Information System (INIS)
Ouyang Fang-Ping; Peng Sheng-Lin; Chen Ling-Na; Sun Shu-Yuan; Xu Hui
2011-01-01
By using the first-principles calculations, the electronic structure and quantum transport properties of metallic carbon nanotubes with B/N pairs co-doping have been investigated. It is shown that the total energies of metallic carbon nanotubes are sensitive to the doping sites of the B/N pairs. The energy gaps of the doped metallic carbon nanotubes decrease with decreasing the concentration of the B/N pair not only along the tube axis but also around the tube. Moreover, the I—V characteristics and transmissions of the doped tubes are studied. Our results reveal that the conducting ability of the doped tube decreases with increasing the concentrations of the B/N pairs due to symmetry breaking of the system. This fact opens a new way to modulate band structures of metallic carbon nanotubes by doping B/N pair with suitable concentration and the novel characteristics are potentially useful in future applications. (condensed matter: electronic structure, electrical, magnetic, and optical properties)
-
Effect of light Si doping on the properties of GaN
International Nuclear Information System (INIS)
Shang, Lin; Zhai, Guangmei; Jia, Zhigang; Mei, Fuhong; Lu, Taiping; Liu, Xuguang; Xu, Bingshe
2016-01-01
An obvious increase in electron mobility and yellow luminescence (YL) band intensity was found in light Si doping GaN. For a series of GaN samples with different doping concentration, the dislocation density is almost the same. It is inferred that the abrupt increase in mobility and YL intensity does not originate from the change of dislocation density. The mobility behavior is attributed to the screening of scattering by dislocation and increase of ionized impurity scattering with the increase of Si doping concentration. At lower doping level, the screening of dislocation scattering is dominant, which results in the increase in carrier mobility. At higher doping level, the increase in ionized impurity scattering leads to the decrease in carrier mobility. Higher mobility causes longer diffusion length of nonequilibrium carrier. More dislocations will participate in the recombination process which induces stronger YL intensity in light Si doping GaN.
-
Energy Technology Data Exchange (ETDEWEB)
Xu, Wencai; Li, Qi; Wang, Xing [Dalian Univ. of Technology, Dalian (China). School of Mechanical Engineering; Yin, Zhifu [Jilin Univ., Changchun (China). Faculty of the School of Mechanical Science and Engineering; Zou, Helin [Dalian Univ. of Technology, Dalian (China). Key Lab. for Micro/Nano Systems and Technology
2017-11-01
Lanthanum (La)-modified lead zirconate titanate (PLZT) thin films with doping concentration from 0 to 5 at.-% have been fabricated by sol-gel methods to investigate the effects of La doping on crystalline orientation, microstructure and dielectric properties of the modified films. The characterization of PLZT thin films were performed by X-ray diffractometry (XRD), scanning electron microscopy (SEM) and precision impedance analysis. XRD analysis showed that PLZT films with La doping concentration below 4 at.-% exhibited (100) preferred orientation. SEM results indicated that PLZT films presented dense and columnar microstructures when La doping concentration was less than 3 at.-%, while the others showed columnar microstructures only at the bottom of the cross section. The maximum dielectric constant (1502.59 at 100 Hz) was obtained in a 2 at.-% La-doped film, which increased by 53.9 % compared with undoped film. Without introducing a seed layer, (100) oriented PLZT thin films were prepared by using conventional heat treatment process and adjusting La doping concentration.
-
Effect of indium and antimony doping in SnS single crystals
Energy Technology Data Exchange (ETDEWEB)
Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.
2015-03-15
Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.
-
Effect of pressure and doping on lattice structure of zinc oxide
Energy Technology Data Exchange (ETDEWEB)
Zolfaghari, Mahmoud, E-mail: mzolfaghari@phys.usb.ac.ir
2017-01-15
The semiconductor ZnO belongs to the IIb-VI binary compound. It has a high exciton binding energy of 60 meV. The bonding in these materials is covalent with some ionic character. Induced changes on the physical properties of Mn doped ZnO samples due to different dopant concentrations and pressure were evaluated. The results obtained showed higher solubility limit for Mn doped ZnO due to pressure. The trend of XRD results for higher Mn concentration (9 at%) as pressure increases, was towards doping improvement. The XRD, SEM and UV–vis study of the samples also revealed that there were variations in the lattice parameters, nanoparticle size and bandgap energy of the doped and pressurized doped samples. Further, the directions of variation of bandgap energy values and calculated particle size, as well as SEM values of the doped samples due to pressure variation were found to be the same i.e. all of them together either increase or decrease as pressure varies. However, these variations were found to be opposite to that of lattice constants (all a and most c values) variation for both Mn dopant concentrations (3 at% and 9 at%). These physical variations of unpressurized doped samples can be attributed to the change in the polar bonding of the elemental constitutions in the lattice. While for the pressurized doped samples, the variations attributed to repulsion of lone pairs as well as change in the electronegativity of the system.
-
Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang
2017-10-09
The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (10 5 -10 8 ) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.
-
Noh, S K; Park, S E; Lee, I H; Choi, I H; Son, S J; Lim, K Y; Lee, H J
1998-01-01
We studied doping behaviors through analysis of the electronic properties of a series of undoped and Si-doped GaN epilayers grown on (0001) sapphire substrates by the low-pressure metal-organic chemical-vapor deposition (LP-MOCVD) technique. The doping efficiency was in the range of 0.4 - 0.8, and an empirical relation expressed as eta = 0.45 log[Si] - 8.1 was obtained. The temperature dependence of carrier concentration showed that the donor activation energy monotonically decreased from 17.6 meV to almost zero as the doping level increased. We suggest that the reduction in the activation energy is related not to autodoped defect centers but to doped Si donors and that the behavior originates from the formation of an impurity band. On the basis of an abrupt change in the compensation ratio from 0.9 to 0.5 by Si-doping, an exceptional difference in the Hall mobility between the undoped and the Si-doped films is explained by a mixed conduction mechanism of electrons and holes.
-
The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices
International Nuclear Information System (INIS)
Kwang-Ohk Cheon
2003-01-01
Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance
-
The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices
Energy Technology Data Exchange (ETDEWEB)
Cheon, Kwang-Ohk [Iowa State Univ., Ames, IA (United States)
2003-01-01
Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.
-
Silver doped metal layers for medical applications
International Nuclear Information System (INIS)
Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M
2014-01-01
Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 at% to 4.32 at% for steel and from 3.04 at% to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficacy (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using scratch test. The antibacterial efficacy changed with silver doping up to 99.9 %. Our investigation was focused on minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.
-
Silver-doped metal layers for medical applications
International Nuclear Information System (INIS)
Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M
2014-01-01
Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316 L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 to 4.32 at% for steel and from 3.04 to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficiency (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using a scratch test. The antibacterial efficiency changed with silver doping up to 99.9 %. Our investigation was focused on the minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness. (paper)
-
Defect formation in heavily doped Si upon irradiation
International Nuclear Information System (INIS)
Gubskaya, V.I.; Kuchinskii, P.V.; Lomako, V.M.
1981-01-01
The rates of the carrier removal and radiation defect introduction into n- and p-Si in the concentration range of 10 14 to 10 17 cm -3 upon 7-MeV-electron irradiation have been studied. The spectrum of the vacancy-type defects, defining the carrier removal rate in lightly doped crystals has been found. With doping level increase the carrier removal rate grows irrespective of conductivity type, and at n 0 , p 0 > 10 17 cm -3 is close to the total displacement number. At the same time a decrease in the introduction rate of the known vacancy-type defects is observed. x It is shown that a considerable growth of the carrier removal rate is defined neither by introduction of shallow compensating centers, nor by change in the primary defect charge state. It is suggested that at high doping impurity concentrations compensation in Si is due to the introduction of complexes doping impurity-interstitial or (impurity atom-interstitial) + vacancy, which give deep levels. (author)
-
Optical limiting study of C60 doped (dimethylandicarboxylate) /poly (ethylacetylenecarboxy)polymer
International Nuclear Information System (INIS)
Zidan, M.D.; Allaf, A.W.
2011-10-01
The optical limiting action of poly(dimethylacetylendicarboxylate) polymer and poly(ethylacetylendicarboxylate) polymer doped with fullerene C 6 0 has been investigated under irradiation with 10 ns laser pulse at 532 nm. The optical limiting measurements were performed at different doping concentrations. The threshold limiting fluence decreased at high doping concentrations, at the same time the optical limiting efficiency has been increased. An explanation based on the combination of two-photon absorption and reverse saturable absorption was proposed for its nonlinear optical absorption behavior. (author)
-
Molecular beam epitaxy of iodine-doped CdTe and (CdMg)Te
Energy Technology Data Exchange (ETDEWEB)
Fischer, F.; Waag, A.; Litz, Th.; Scholl, S.; Schmitt, M.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstofforschung, Stuttgart (Germany))
1994-08-01
The n-type doping of CdTe and (CdMg)Te by the use of the solid dopant source material ZnI[sub 2] is reported. Doping levels as high as 7x10[sup 18] cm[sup -3] have been obtained in CdTe with carrier mobilities around 500 cm[sup 2]/V[center dot]s at room temperature. For a dopant incorporation higher than 1x10[sup 19] cm[sup -3] the free carrier concentration decreases, indicating the onset of a compensation mechanism, which is observed in the case of chlorine and bromine doping, too. Preliminary experiments show that with increasing Mg concentration the free carrier concentration decreases. Nevertheless, CdMgTe with a magnesium concentration x=0.37 (band gap 2.2 eV at room temperature) can be doped up to 2x10[sup 17] cm[sup -3]. The existence of deep donor levels in this CdTe based ternary is not supposed to be the only reason for the reduction of the free carrier concentration. For high Mg support during molecular beam epitaxial (MBE) growth of wide gap (CdMg)Te layers, the ZnI[sub 2] incorporation is reduced, leading to low doping levels, too
-
Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method
Radha, R.; Sakthivelu, A.; Pradhabhan, D.
2016-08-01
Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.
-
International Nuclear Information System (INIS)
Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.
2014-01-01
Thin layers of Al 2 O 3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p + emitters, due to a high density of fixed negative charges. Recent results indicate that Al 2 O 3 can also provide a good passivation of certain phosphorus-diffused n + c-Si surfaces. In this work, we studied the recombination at Al 2 O 3 passivated n + surfaces theoretically with device simulations and experimentally for Al 2 O 3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al 2 O 3 interface. This pronounced maximum was also observed experimentally for n + surfaces passivated either with Al 2 O 3 single layers or stacks of Al 2 O 3 capped by SiN x , when activated with a low temperature anneal (425 °C). In contrast, for Al 2 O 3 /SiN x stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n + diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al 2 O 3 /SiN x stacks can provide not only excellent passivation on p + surfaces but also on n + surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments
-
Dielectric and magnetic properties of (Zn, Co) co-doped SnO2 nanoparticles
International Nuclear Information System (INIS)
Rajwali, Khan; Fang Ming-Hu
2015-01-01
Polycrystalline samples of (Zn, Co) co-doped SnO 2 nanoparticles were prepared using a co-precipitation method. The influence of (Zn, Co) co-doping on electrical, dielectric, and magnetic properties was studied. All of the (Zn, Co) co-doped SnO 2 powder samples have the same tetragonal structure of SnO 2 . A decrease in the dielectric constant was observed with the increase of Co doping concentration. It was found that the dielectric constant and dielectric loss values decrease, while AC electrical conductivity increases with doping concentration and frequency. Magnetization measurements revealed that the Co doping SnO 2 samples exhibits room temperature ferromagnetism. Our results illustrate that (Zn, Co) co-doped SnO 2 nanoparticles have an excellent dielectric, magnetic properties, and high electrical conductivity than those reported previously, indicating that these (Zn, Co) co-doped SnO 2 materials can be used in the field of the ultrahigh dielectric material, high frequency device, and spintronics. (paper)
-
Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A
2015-04-01
The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed. Copyright © 2014 Elsevier Ltd. All rights reserved.
-
An Ultra-low Frequency Modal Testing Suspension System for High Precision Air Pressure Control
Directory of Open Access Journals (Sweden)
Qiaoling YUAN
2014-05-01
Full Text Available As a resolution for air pressure control challenges in ultra-low frequency modal testing suspension systems, an incremental PID control algorithm with dead band is applied to achieve high-precision pressure control. We also develop a set of independent hardware and software systems for high-precision pressure control solutions. Taking control system versatility, scalability, reliability, and other aspects into considerations, a two-level communication employing Ethernet and CAN bus, is adopted to complete such tasks as data exchange between the IPC, the main board and the control board ,and the pressure control. Furthermore, we build a single set of ultra-low frequency modal testing suspension system and complete pressure control experiments, which achieve the desired results and thus confirm that the high-precision pressure control subsystem is reasonable and reliable.
-
Electrical Transport Ability of Nanostructured Potassium-Doped Titanium Oxide Film
Lee, So-Yoon; Matsuno, Ryosuke; Ishihara, Kazuhiko; Takai, Madoka
2011-02-01
Potassium-doped nanostructured titanium oxide films were fabricated using a wet corrosion process with various KOH solutions. The doped condition of potassium in TiO2 was confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). Nanotubular were synthesized at a dopant concentration of 0.27%, these structures disappeared. To investigate the electrical properties of K-doped TiO2, pseudo metal-oxide-semiconductor field-effect transistor (MOSFET) samples were fabricated. The samples exhibited a distinct electrical behavior and p-type characteristics. The electrical behavior was governed by the volume of the dopant when the dopant concentration was 0.18%.
-
Enhanced thermoelectric properties of bismuth telluride-organic hybrid films via graphene doping
International Nuclear Information System (INIS)
Rahman, Airul Azha Abd; Umar, Akrajas Ali; Salleh, Muhamad Mat; Chen, Xiaomei; Oyama, Munetaka
2016-01-01
The thermoelectric properties of graphene-doped bismuth telluride-PEDOT:PSS-glycerol (hybrid) films were investigated. Prior to the study, p-type and n-type hybrid films were prepared by doping the PEDOT:PSS-glycerol with the p- and n-type bismuth telluride. Graphene-doped hybrid films were prepared by adding graphene particles of concentration ranging from 0.02 to 0.1 wt% into the hybrid films. Films of graphene-doped hybrid system were then prepared on a glass substrate using a spin-coating technique. It was found that the electrical conductivity of the hybrid films increases with the increasing of the graphene-dopant concentration and optimum at 0.08 wt% for both p- and n-type films, namely 400 and 195 S/cm, respectively. Further increasing in the concentration caused a decreasing in the electrical conductivity. Analysis of the thermoelectric properties of the films obtained that the p-type film exhibited significant improvement in its thermoelectric properties, where the thermoelectric properties increased with the increasing of the doping concentration. Meanwhile, for the case of n-type film, graphene doping showed a negative effect to the thermoelectrical properties, where the thermoelectric properties decreased with the increasing of doping concentration. Seebeck coefficient (and power factor) for optimum p-type and n-type hybrid thin films, i.e., doped with 0.08 wt% of graphene, is 20 μV/K (and 160 μW m -1 K -2 ) and 10 μV/K (and 19.5 μW m -1 K -2 ), respectively. The obtained electrical conductivity and thermoelectric properties of graphene-doped hybrid film are interestingly several orders higher than the pristine hybrid films. A thermocouple device fabricated utilizing the p- and n-type graphene-doped hybrid films can generate an electric voltage as high as 2.2 mV under a temperature difference between the hot-side and the cold-side terminal as only low as 55 K. This is equivalent to the output power as high as 24.2 nW (for output load as high as 50
-
Scintillation and optical stimulated luminescence of Ce-doped CaF2
International Nuclear Information System (INIS)
Yanagida, Takayuki; Fujimoto, Yutaka; Watanabe, Kenichi; Fukuda, Kentaro; Kawaguchi, Noriaki; Miyamoto, Yuka; Nanto, Hidehito
2014-01-01
Scintillation and optical stimulated luminescence of Ce 0.1–20% doped CaF 2 crystals prepared by Tokuyama Corp. were investigated. In X-ray induced scintillation spectra, luminescence due to Ce 3+ 5d–4f transition appeared around 320 nm with typically 40 ns decay time. By 241 Am 5.5 MeV α-ray irradiation, 0.1% doped one showed the highest scintillation light yield and the light yield monotonically decreased with Ce concentrations. Optically stimulated luminescence after X-ray irradiation was observed around 320 nm under 550 or 830 nm stimulation in all samples. As a result, intensities of optically stimulated luminescence were proportional to Ce concentrations. Consequently, scintillation and optically stimulated luminescence resulted to have a complementary relation in Ce-doped CaF 2 system. - Highlights: • Optical, scintillation, and OSL properties of Ce 0.1–20% doped CaF 2 were studied. • Scintillation light yield exhibited inverse proportionality to Ce concentrations. • OSL intensities showed proportionality to Ce concentrations. • Complementary relation of scintillation and OSL was experimentally confirmed
-
The EVEREST Doping Profile Module. Version 4
International Nuclear Information System (INIS)
Ashby, J.; Fowler, R.; Greenough, C.
1998-01-01
In this report we describe the EVEREST Doping Module which forms part of the EVEREST suite of programs. The doping module is responsible for generating a neutral file which gives the acceptor and donor densities at each node the device mesh. The neutral file also contains details of the functions used to generate the doping as mesh refinement in the solver requires this. Commands allow the definition of background doping, regions of uniform doping, non-uniform doping relating to windows found in the Geometry neutral file and a user-programmable FORTRAN subroutine which computes doping concentrations as a function of position. The EVEREST suite is one of the products of the ESPRIT project EVEREST (ESPRIT 962E-17, Three-Dimensional Algorithms for a Robust and Efficient Semiconductor Simulator with Parameter Extraction). EVEREST was a four-year project supported by the European Community under the European Strategic Program for Research in Information Technology (ESPRIT) which is investigating suitable algorithms for the analysis of semiconductor devices in three dimensions, and developing software implementing the most effective of those algorithms. The original authors of the Doping Module were G.A. Duffett and M.S. Towers of University College, Swansea. (author)
-
Microstructural, optical and electrical properties of Cl-doped CdTe single crystals
Directory of Open Access Journals (Sweden)
Choi Hyojeong
2016-09-01
Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.
-
International Nuclear Information System (INIS)
Gürbüz, Osman; Kurt, İsmail; Çalışkan, Serkan; Güner, Sadık
2015-01-01
Highlights: • RF magnetron sputtering technique seems to be very efficient method for fabrication of Al doped ZnO (AZO) films. • Long range single crystalline structure improves with annealing process. • Optical properties became much better after annealing process especially for the AZO films that include high Al concentration. • Much greater conductivity with increasing Al concentration and annealing process. • AZO films have potential applicability in spintronic devices. - Abstract: The pure ZnO and Al-doped ZnO (AZO) thin films (thickness: 200 nm) were prepared on both side polished silica (SiO 2 ) substrates via RF magnetron sputtering at room temperature by using 2.5 inches high-purity ZnO (99.9%) and Al (99.9%) targets. The samples were annealed at 300 °C, 400 °C and 500 °C for 45 min in N 2 ambient in quartz annealing furnace system, respectively. We investigated the effects of various Al concentrations and annealing treatment on the structural, electrical, and optical properties of films. The preferred crystallization was observed along c axis (single (0 0 2) diffraction peak) from substrate surface assigning the single crystalline Würtzite lattice for pure ZnO and AZO thin films. Although increasing Al concentration decreases the order of crystallization of as-grown films, annealing process increases the long range crystal order. The crystallite sizes vary between minimum 12.98 nm and maximum 20.79 nm for as-grown and annealed samples. The crystallite sizes decrease with increasing Al concentration but increase with increasing annealing temperature as general trend. The grain size and porosity of films change with annealing treatment. The smaller grains coalesce together to form larger grains for many films. However, a reverse behavior is seen for Al 2.23 ZnO and Al 12.30 ZnO samples. That is, Al concentration plays critical role as well as temperature on grain size. Low percent optical transmittance (T%) is observed due to higher Al
-
Doping enhanced barrier lowering in graphene-silicon junctions
Zhang, Xintong; Zhang, Lining; Chan, Mansun
2016-06-01
Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.
-
Physical and chemical properties of calcium doped neodymium manganite
International Nuclear Information System (INIS)
Tikhonova, L.A.; Zhuk, P.P.; Tonoyan, A.A.; Vecher, A.A.
1991-01-01
Physical and chemical properties of calcium doped neodymium manganite were investigated. It was shown that structure of perovskite with O'-orthorhombic distortion was characteristic for solid solutions of Nd 1-x Ca x MnO 3 (x=0-0.5). Maximum of conductivity for samples with x=0.2 was determined. Inversion of conductivity from p- (x=0) to n-type (x=0.5) was observed in increase of concentration of calcium doped addition. Values of thermal expansion coefficient of studied solid solutions of Nd 1-x Ca x MnO 3 didn't depend on concentration of doped addition within the range 700 to 1200 K and were (9.9-11.3)·10 -6 K -1
-
Sahin, Bünyamin; Kaya, Tolga
2016-01-01
In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current-voltage (I-V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.
-
Transmutation doping of silicon solar cells
Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.
1977-01-01
Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.
-
Dalapati, Goutam Kumar; Shun Wong, Terence Kin; Li, Yang; Chia, Ching Kean; Das, Anindita; Mahata, Chandreswar; Gao, Han; Chattopadhyay, Sanatan; Kumar, Manippady Krishna; Seng, Hwee Leng; Maiti, Chinmay Kumar; Chi, Dong Zhi
2012-02-02
Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted in auto-doping, and therefore, an n-MOS behavior was observed for undoped and Zn-doped epi-GaAs with the doping concentration up to approximately 1017 cm-3. This is attributed to the diffusion of a significant amount of Ge atoms from the Ge substrate as confirmed by the simulation using SILVACO software and also from the secondary ion mass spectrometry analyses. The Zn-doped epi-GaAs with a doping concentration of approximately 1018 cm-3 converts the epi-GaAs layer into p-type since the Zn doping is relatively higher than the out-diffused Ge concentration. The capacitance-voltage characteristics show similar frequency dispersion and leakage current for n-type and p-type epi-GaAs layers with very low hysteresis voltage (approximately 10 mV).PACS: 81.15.Gh.
-
Takeda, Shun; Kumagai, Hiroshi
2018-02-01
Hyperpolarized (HP) noble gas has attracted attention in NMR / MRI. In an ultra-low magnetic field, the effectiveness of signal enhancement by HP noble gas should be required because reduction of the signal intensity is serious. One method of generating HP noble gas is spin exchange optical pumping which uses selective excitation of electrons of alkali metal vapor and spin transfer to nuclear spin by collision to noble gas. Although SEOP does not require extreme cooling or strong magnetic field, generally it required large-scale equipment including high power light source to generate HP noble gas with high efficiency. In this study, we construct a simply generation system of HP xenon-129 by SEOP with an ultralow magnetic field (up to 1 mT) and small-scale light source (about 1W). In addition, we measure in situ NMR signal at the same time, and then examine efficient conditions for SEOP in ultra-low magnetic fields.
-
Note: Ultra-low birefringence dodecagonal vacuum glass cell
Energy Technology Data Exchange (ETDEWEB)
Brakhane, Stefan, E-mail: brakhane@iap.uni-bonn.de; Alt, Wolfgang; Meschede, Dieter; Robens, Carsten; Moon, Geol; Alberti, Andrea [Institut für Angewandte Physik, Universität Bonn, Wegelerstr. 8, D-53115 Bonn (Germany)
2015-12-15
We report on an ultra-low birefringence dodecagonal glass cell for ultra-high vacuum applications. The epoxy-bonded trapezoidal windows of the cell are made of SF57 glass, which exhibits a very low stress-induced birefringence. We characterize the birefringence Δn of each window with the cell under vacuum conditions, obtaining values around 10{sup −8}. After baking the cell at 150 °C, we reach a pressure below 10{sup −10} mbar. In addition, each window is antireflection coated on both sides, which is highly desirable for quantum optics experiments and precision measurements.
-
International Nuclear Information System (INIS)
Nusrat, H; Pang, G; Sarfehnia, A
2016-01-01
Purpose: This work seeks to develop a beam quality meter using multiple differently doped plastic scintillators that are thus intrinsically beam-quality dependent. Plastic scintillators spontaneously emit visible light upon irradiation; the amount of light produced is dependent on stopping power (closely related to LET) according to Birks’ law. Doping plastic scintillators can be used to tune their sensitivity to specific LET ranges. Methods: GEANT4.10.1 Monte Carlo (MC) was used to evaluate the response of various scintillator dopant combinations. MC radiation transport and scintillator light response were validated against previously published literature. Current work involves evaluating detector response experimentally; to that end, a detector prototype with interchangeable scintillator housing was constructed. Measurement set-up guides light emitted by the scintillator to a photomultiplier tube via a glass taper junction coupled to an optical fiber. The resulting signal is measured by an electrometer, and normalized to dose readout from a diode. Measurements have been done using clinical electron and orthovoltage beams. MC response (simulated scintillator light normalized to dose scored inside the scintillating volume) was evaluated for four different LET radiations for an undoped and 1%Pb doped scintillator (σ=0.85%). Simulated incident electrons included: 0.05, 0.1, 0.2, 6, 12, and 18 MeV; these energies correspond to a range of stopping power (related to LET) values ranging from 1.824 to 11.09 MeVcm"2g"−"1 (SCOL from NIST-ESTAR). Results: Initial MC results show a distinct divergence in scintillator response as LET increases. The response for undoped plastic scintillator indicated a 35.0% increase in signal when going from 18 MeV (low LET) to 0.05 MeV (high LET) while 1%-Pb doped scintillator indicated a 100.9% increase. Conclusion: After validating MC against measurement, simulations will be used to test various concentrations (2%, 4%, 6%) of different
-
Energy Technology Data Exchange (ETDEWEB)
Nusrat, H [Ryerson University, Toronto, ON (Canada); Pang, G; Sarfehnia, A [Sunnybrook Health Sciences Centre, Toronto, ON (Canada)
2016-06-15
Purpose: This work seeks to develop a beam quality meter using multiple differently doped plastic scintillators that are thus intrinsically beam-quality dependent. Plastic scintillators spontaneously emit visible light upon irradiation; the amount of light produced is dependent on stopping power (closely related to LET) according to Birks’ law. Doping plastic scintillators can be used to tune their sensitivity to specific LET ranges. Methods: GEANT4.10.1 Monte Carlo (MC) was used to evaluate the response of various scintillator dopant combinations. MC radiation transport and scintillator light response were validated against previously published literature. Current work involves evaluating detector response experimentally; to that end, a detector prototype with interchangeable scintillator housing was constructed. Measurement set-up guides light emitted by the scintillator to a photomultiplier tube via a glass taper junction coupled to an optical fiber. The resulting signal is measured by an electrometer, and normalized to dose readout from a diode. Measurements have been done using clinical electron and orthovoltage beams. MC response (simulated scintillator light normalized to dose scored inside the scintillating volume) was evaluated for four different LET radiations for an undoped and 1%Pb doped scintillator (σ=0.85%). Simulated incident electrons included: 0.05, 0.1, 0.2, 6, 12, and 18 MeV; these energies correspond to a range of stopping power (related to LET) values ranging from 1.824 to 11.09 MeVcm{sup 2}g{sup −1} (SCOL from NIST-ESTAR). Results: Initial MC results show a distinct divergence in scintillator response as LET increases. The response for undoped plastic scintillator indicated a 35.0% increase in signal when going from 18 MeV (low LET) to 0.05 MeV (high LET) while 1%-Pb doped scintillator indicated a 100.9% increase. Conclusion: After validating MC against measurement, simulations will be used to test various concentrations (2%, 4%, 6%) of
-
Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate
International Nuclear Information System (INIS)
Wang, Yaqi; Alur, Siddharth; Sharma, Yogesh; Tong, Fei; Thapa, Resham; Gartland, Patrick; Issacs-Smith, Tamara; Ahyi, Claude; Williams, John; Park, Minseo; Johnson, Mark; Paskova, Tanya; Preble, Edward A; Evans, Keith R
2011-01-01
Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 mΩ cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-of- merit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I–V measurements were also carried out to study the forward and reverse transportation mechanisms. (fast track communication)
-
Ferromagnetism in doped or undoped spintronics nanomaterials
Qiang, You
2010-10-01
Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.
-
National Aeronautics and Space Administration — NanoSonic proposes to develop an innovative, ultralow mass density, and non-intrusive sensor system for ultra long duration balloons that will operate in the most...
-
Effect of Cr doping on structural and magnetic properties of ZnS nanoparticles
International Nuclear Information System (INIS)
Virpal,; Singh, Jasvir; Sharma, Sandeep; Singh, Ravi Chand
2016-01-01
The structural, optical and magnetic properties of pure and Cr doped ZnS nanoparticles were studied at room temperature. X-ray diffraction analysis confirmed the absence of any mixed phase and the cubic structure of ZnS in pure and Cr doped ZnS nanoparticles. Fourier transfer infrared spectra confirmed the Zn-S stretching bond at 664 cm"−"1 of ZnS in all prepared nanoparticles. The UV-Visible absorption spectra showed blue shift which became even more pronounced in Cr doped ZnS nanoparticles. However, at relatively higher Cr concentrations a slower red shift was shown by the doped nanoparticles. This phenomenon is attributed to sp-d exchange interaction that becomes prevalent at higher doping concentrations. Further, magnetic hysteresis measurements showed that Cr doped ZnS nanoparticles exhibited ferromagnetic behavior at room temperature.
-
Fluorine-doped NiO nanostructures: Structural, morphological and spectroscopic studies
Singh, Kulwinder; Kumar, Manjeet; Singh, Dilpreet; Singh, Manjinder; Singh, Paviter; Singh, Bikramjeet; Kaur, Gurpreet; Bala, Rajni; Thakur, Anup; Kumar, Akshay
2018-05-01
Nanostructured NiO has been prepared by co-precipitation method. In this study, the effect of fluorine doping (1, 3 and 5 wt. %) on the structural, morphological as well as optical properties of NiO nanostructures has been studied. X-ray diffraction (XRD) has employed for studying the structural properties. Cubic crystal structure of NiO was confirmed by the XRD analysis. Crystallite size increased with increase in doping concentration. Nelson-Riley factor (NRF) analysis indicated the presence of defect states in the synthesized samples. Field emission scanning electron microscopy showed the spherical morphology of the synthesized samples and also revealed that the particle size varied with dopant content. The optical properties were studied using UV-Visible Spectroscopy. The results indicated that the band gap energy of the synthesized nanostructures decreased with increase in doping concentration upto 3% but increased as the doping concentration was further raised to 5%. This can be ascribed to the defect states variations in the synthesized samples. The results suggested that the synthesized nanostructures are promising candidate for optoelectronic as well as gas sensing applications.
-
An investigation on the In doping of ZnO thin films by spray pyrolysis
Mahesh, Devika; Kumar, M. C. Santhosh
2018-04-01
Indium doped zinc oxide (IGZO)thin films are gaining much interest owing to its commercial application as transparent conductive oxide thin films. In the current study thin films indium doped ZnO thin films have been deposited on glass substrates by chemical spray pyrolysis technique with an indium concentration of 1, 2.5 and 4% in Zinc source. The films show a peak shift in the X-Ray Diffraction patterns with varying indium doping concentration. The (101) peak was enhanced for the 2.5 % indium doped films and variation in grain size with the different doping levels was studied. The as-deposited films are uniform and shown high transparency (>90%) in the visible region. Average thicknesses of films are found to be 800nm, calculated using the envelope method. The film with 2.5 % of indium content was found to be highly conducting than the rest, since for the lower and higher concentrations the conductivity was possibly halted by the limit in carrier concentration and indium segregation in the grain boundaries respectively. The enhancement of mobility and carrier concentration was clearly seen in the optimum films.
-
EPR in non-doped irradiated polyacetylene
International Nuclear Information System (INIS)
Hola, O.; Stasko, A.; Foeldesova, M.
1993-01-01
The influence of γ-irradiation on the paramagnetic properties of non-doped polyacetylene at low and high radiation doses has been studied and summarized. The dependence of the EPR spectra on the radiation dose in irradiated polyacetylene has been measured. No essential changes of the spin mobility as a consequence of irradiation were observed. The measurements of spin concentration confirm the high resistivity of non-doped polyacetylene to radiation. (author) 9 refs
-
Channel coding study for ultra-low power wireless design of autonomous sensor works
Zhang, P.; Huang, Li; Willems, F.M.J.
2011-01-01
Ultra-low power wireless design is highly demanded for building up autonomous wireless sensor networks (WSNs) for many application areas. To keep certain quality of service with limited power budget, channel coding techniques can be applied to maintain the robustness and reliability of WSNs. In this
-
Energy Technology Data Exchange (ETDEWEB)
Naqvi, Syed Mohd. Adnan, E-mail: adiaks2004@yahoo.co.in [Department of Fundamental and Applied Sciences, Universiti Teknologi Petronas, Bandar Seri Iskandar, Perak (Malaysia); Irshad, Kashif, E-mail: alig.kashif@gmail.com [Department of Mechanical Engineering, Universiti Teknologi Petronas, Bandar Seri Iskandar, Perak (Malaysia); Soleimani, Hassan, E-mail: hassan.soleimani@petronas.com.my, E-mail: noorhana-yahya@petronas.com.my; Yahya, Noorhana, E-mail: hassan.soleimani@petronas.com.my, E-mail: noorhana-yahya@petronas.com.my
2014-10-24
Nanosized Cr-doped ZnO nano particles were synthesized by facile sol-gel auto combustion method. The structural and optical properties of Cr-doped ZnO nanoparticles have been investigated by XRD and UV-Vis spectroscopy at room temperature for 0% to 8% concentration. X-ray diffraction analysis reveals that the Cr-doped ZnO crystallizes in a single phase polycrystalline nature with wurtzite lattice. With every % of doping, the peaks are shifting scarcely and doping of Cr is possible up to 7%. After that, the last peak vanishes, that signifies its structure is transmuted from 8% doping. The average crystallite size decreases with increase in Cr concentration (i.e. 28.9 nm for 0% to 25.8 nm for 8%). The UV-Vis spectra of the nanoparticles betoken an incrementation in the band gap energy from 3.401, 3.415, 3.431, 3.437,3.453, 3.514,3.521, 3.530 and 3.538 eV respectively, for 0,1, 2, 3, 4, 5, 6, 7 and 8 % doping concentration.
-
International Nuclear Information System (INIS)
Naqvi, Syed Mohd. Adnan; Irshad, Kashif; Soleimani, Hassan; Yahya, Noorhana
2014-01-01
Nanosized Cr-doped ZnO nano particles were synthesized by facile sol-gel auto combustion method. The structural and optical properties of Cr-doped ZnO nanoparticles have been investigated by XRD and UV-Vis spectroscopy at room temperature for 0% to 8% concentration. X-ray diffraction analysis reveals that the Cr-doped ZnO crystallizes in a single phase polycrystalline nature with wurtzite lattice. With every % of doping, the peaks are shifting scarcely and doping of Cr is possible up to 7%. After that, the last peak vanishes, that signifies its structure is transmuted from 8% doping. The average crystallite size decreases with increase in Cr concentration (i.e. 28.9 nm for 0% to 25.8 nm for 8%). The UV-Vis spectra of the nanoparticles betoken an incrementation in the band gap energy from 3.401, 3.415, 3.431, 3.437,3.453, 3.514,3.521, 3.530 and 3.538 eV respectively, for 0,1, 2, 3, 4, 5, 6, 7 and 8 % doping concentration
-
Investigation on the effect of Zr doping in ZnO thin films by spray pyrolysis
International Nuclear Information System (INIS)
Gokulakrishnan, V.; Parthiban, S.; Jeganathan, K.; Ramamurthi, K.
2011-01-01
Zirconium doped zinc oxide thin films with enhanced optical transparency were prepared on Corning 1737 glass substrates at the substrate temperature of 400 o C by spray pyrolysis method for various doping concentrations of zirconium (IV) chloride in the spray solution. The X-ray diffraction studies reveal that the films exhibit hexagonal crystal structure with polycrystalline grains oriented along (0 0 2) direction. The crystalline quality of the films is found to be deteriorating with the increase of doping concentration and acquires amorphous state for higher concentration of 8 at.% in precursor solution. The average transmittance for 5 at.% (solution) zirconium doped ZnO film is significantly increased to ∼92% in the visible region of 500-800 nm. The room temperature photoluminescence (PL) spectra of films show a band edge between 3.41 and 3.2 eV and strong blue emission at 2.8 eV irrespective of doping concentration and however intensity increases consistently with doping levels. The vacuum annealing at 400 o C reduced the resistivity of the films significantly due to the coalescence of grains and the lowest resistivity of 2 x 10 -3 Ω cm is observed for 3 at.% (solution) Zr doped ZnO films which envisages that it is a good candidate for stable TCO material.
-
Seifer, David B; Tal, Oded; Wantman, Ethan; Edul, Preeti; Baker, Valerie L
2016-02-01
To assess cycle outcomes when antimüllerian hormone (AMH) is ultralow (≤0.16 ng/mL) and to determine which parameters contribute to the probability of cycle cancellation and/or outcome. Retrospective analysis. Not applicable. 5,087 (7.3%) fresh and 243 (1.5%) thawed cycles with ultralow AMH values. Linear and logistic regression, comparison with age-matched cycles with normal AMH concentrations. Cancellation rate; number of retrieved oocytes, embryos, transferred embryos, and cryopreserved embryos; clinical pregnancy, live-birth, and multiple birth rates. The total cancellation rate per cycle start for fresh cycles was 54%. Of these, 38.6% of the cycles were canceled before retrieval, and 3.3% of cycles obtained no oocytes at time of retrieval. Of all retrieval attempts, 50.7% had three oocytes or fewer retrieved, and 25.1% had no embryo transfer. The live-birth rates were 9.5% per cycle start. Cycles with ultralow AMH levels compared with age-matched normal AMH cycles demonstrated more than a fivefold greater pre-retrieval cancellation rate, a twofold less live-birth rate per cycle and a 4.5-fold less embryo cryopreservation rate. Refusing treatment solely on the basis of ultralow AMH levels is not advisable, but patients should be counseled appropriately about the prognostic factors for cancellation and outcomes. Copyright © 2016 American Society for Reproductive Medicine. Published by Elsevier Inc. All rights reserved.
-
Unraveling the mechanism of molecular doping in organic semiconductors.
Mityashin, Alexander; Olivier, Yoann; Van Regemorter, Tanguy; Rolin, Cedric; Verlaak, Stijn; Martinelli, Nicolas G; Beljonne, David; Cornil, Jérôme; Genoe, Jan; Heremans, Paul
2012-03-22
The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no electrical effect. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
-
Maurath, Dominic
2015-01-01
Chip-integrated power management solutions are a must for ultra-low power systems. This enables not only the optimization of innovative sensor applications. It is also essential for integration and miniaturization of energy harvesting supply strategies of portable and autonomous monitoring systems. The book particularly addresses interfaces for energy harvesting, which are the key element to connect micro transducers to energy storage elements. Main features of the book are: - A comprehensive technology and application review, basics on transducer mechanics, fundamental circuit and control design, prototyping and testing, up to sensor system supply and applications. - Novel interfacing concepts - including active rectifiers, MPPT methods for efficient tracking of DC as well as AC sources, and a fully-integrated charge pump for efficient maximum AC power tracking at sub-100µW ultra-low power levels. The chips achieve one of widest presented operational voltage range in standard CMOS technology: 0.44V to over...
-
Low-temperature electrical transport in B-doped ultrananocrystalline diamond film
International Nuclear Information System (INIS)
Li, Lin; Zhao, Jing; Hu, Zhaosheng; Quan, Baogang; Li, Junjie; Gu, Changzhi
2014-01-01
B-doped ultrananocrystalline diamond (UNCD) films are grown using hot-filament chemical vapor deposition method, and their electrical transport properties varying with temperature are investigated. When the B-doped concentration of UNCD film is low, a step-like increase feature of the resistance is observed with decreasing temperature, reflecting at least three temperature-modified electronic state densities at the Fermi level according to three-dimensional Mott's variable range hopping transport mechanism, which is very different from that of reported B-doped nanodiamond. With increasing B-doped concentration, a superconductive transformation occurs in the UNCD film and the highest transformation temperature of 5.3 K is observed, which is higher than that reported for superconducting nanodiamond films. In addition, the superconducting coherence length is about 0.63 nm, which breaks a reported theoretical and experimental prediction about ultra-nanoscale diamond's superconductivity
-
Magnetic anomalies in Fe-doped NiO nanoparticle
Pradeep, R.; Gandhi, A. C.; Tejabhiram, Y.; Mathar Sahib, I. K. Md; Shimura, Y.; Karmakar, L.; Das, D.; Wu, Sheng Yun; Hayakawa, Y.
2017-09-01
Undoped and iron-doped NiO nanoparticle were synthesized by standard hydrothermal method. A detailed study is carried out on the effect of dopant concentration on morphology, structural, resonance and magnetic properties of NiO nanoparticle by varying the Fe concentration from 0.01 to 0.10 M. The synchrotron-x-ray diffraction confirmed that no secondary phase was observed other than NiO. The x-ray photoelectron spectroscopy studies revealed that, Fe was primarily in the trivalent state, replacing the Ni2+ ion inside the octahedral crystal site of NiO. The Electron paramagnetic studies revealed the ferromagnetic cluster formation at high doping concentration (5 and 10%). The ZFC-FC curves displayed an average blocking temperature around 180 K due to particle size distribution. The anomalous behaviour of spontaneous exchange bias (H SEB) and magnetic remanence (M r) for all Fe-doped samples observed at 5 K showed an increase (0.1316-0.1384 emu g-1) in the moment of frozen spin (M p) as the dopant concentration increased. The role of frozen spin moment in spontaneous exchange bias behaviour was discussed.
-
International Nuclear Information System (INIS)
Misiak, Małgorzata; Stręk, Wiesław; Arabasz, Sebastian; Bednarkiewicz, Artur
2016-01-01
Simple and effective ways to circumvent limited luminescence efficiency of up-converting nanoparticles (UCNPs) are sought. One of the methods relays on distorting the crystallographic structure of host material by co-doping the nanocrystals with optically inactive co-dopants. Here we study the influence of K + doping and surface passivation on the up-converting properties of the α-NaYF 4 nanocrystals co-doped with 20% Yb 3+ and 0.1 or 2% Tm 3+ . The intentionally chosen concentrations of K + ions, which were meant to replaced sodium ions were fixed to 0, 5, 10, 20 to 30%. Potassium ions modified the spectroscopic properties of both core and core–shell NPs, but the differences were noticed between samples doped with 0.1% Tm 3+ and 2% Tm 3+ ions. Replacement of sodium by potassium ions decreased up-conversion luminescence intensity as well as shortened thulium excited states lifetimes in the samples doped with 0.1% Tm 3+ , while the opposite behavior was found in the samples co-doped with higher 2% thulium concentration. - Highlights: • We studied the influence of K + doping on luminescent properties of α-NaYF 4 :YbTm. • The 0.1 and 2% Tm doped core and core–shell samples were investigated. • K + -doping influence on UC properties was different in low and highly Tm doped NPs. • The explanations of the observed variations were proposed.
-
High-performance silicon nanotube tunneling FET for ultralow-power logic applications
Fahad, Hossain M.; Hussain, Muhammad Mustafa
2013-01-01
To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.
-
Le, Khai Q.; Dang, Ngo Hai
2018-05-01
This paper investigates solvent and concentration effects on photoluminescence (PL) or fluorescence properties of Rhodamine 800 (Rho800) dyes formed in aqueous solution and polymer thin-film. Various commonly used organic solvents including ethanol, methanol and cyclopentanol were studied at a constant dye concentration. There were small changes in the PL spectra for the different solvents in terms of PL intensity and peak wavelength. The highest PL intensity was observed for cyclopentanol and the lowest for ethanol. The longest peak wavelength was found in cyclopentanol (716 nm) and the shortest in methanol (708 nm). Dissolving the dye powder in the methanol solvent and varying the dye concentration in aqueous solution from the high concentrated solution to highly dilute states, the wavelength tunability was observed between about 700 nm in the dilute state and 730 nm at high concentration. Such a large shift may be attributed to the formation of dye aggregates. Rho800 dye-doped polyvinyl alcohol (PVA) polymer thin-film was further investigated. The PL intensity of the dye in the form of thin-film is lower than that of the aqueous solution form whereas the peak wavelength is redshifted due to the presence of PVA. This paper, to our best knowledge, reports the first study of spectroscopic properties of Rho800 dyes in various forms and provides useful guidelines for production of controllable organic luminescence sources.
-
Cubic to tetragonal phase transition of Tm3+ doped nanocrystals in oxyfluoride glass ceramics
International Nuclear Information System (INIS)
Li, Yiming; Fu, Yuting; Shi, Yahui; Zhang, Xiaoyu; Yu, Hua; Zhao, Lijuan
2016-01-01
Tm 3+ ions doped β-PbF 2 nanocrystals in oxyfluoride glass ceramics with different doping concentrations and thermal temperatures are prepared by a traditional melt-quenching and thermal treatment method to investigate the structure and the phase transition of Tm 3+ doped nanocrystals. The structures are characterized by X-ray diffraction Rietveld analysis and confirmed with numerical simulation. The phase transitions are proved further by the emission spectra. Both of the doping concentration and thermal temperature can induce an O h to D 4h site symmetry distortion and a cubic to tetragonal phase transition. The luminescence of Tm 3+ doped nanocrystals at 800 nm was modulated by the phase transition of the surrounding crystal field
-
Mallik, Arun Kumar; Farrell, Gerald; Liu, Dejun; Kavungal, Vishnu; Wu, Qiang; Semenova, Yuliya
2018-01-26
A silica gel coated microsphere resonator is proposed and experimentally demonstrated for measurements of ammonia (NH 3 ) concentration in air with ultra-high sensitivity. The optical properties of the porous silica gel layer change when it is exposed to low (parts per million (ppm)) and even ultra-low (parts per billion (ppb)) concentrations of ammonia vapor, leading to a spectral shift of the WGM resonances in the transmission spectrum of the fiber taper. The experimentally demonstrated sensitivity of the proposed sensor to ammonia is estimated as 34.46 pm/ppm in the low ammonia concentrations range from 4 ppm to 30 ppm using an optical spectrum analyser (OSA), and as 800 pm/ppm in the ultra-low range of ammonia concentrations from 2.5 ppb to 12 ppb using the frequency detuning method, resulting in the lowest detection limit (by two orders of magnitude) reported to date equal to 0.16 ppb of ammonia in air. In addition, the sensor exhibits excellent selectivity to ammonia and very fast response and recovery times measured at 1.5 and 3.6 seconds, respectively. Other attractive features of the proposed sensor are its compact nature, simplicity of fabrication.
-
Energy Technology Data Exchange (ETDEWEB)
Messerli, Michael, E-mail: Michael.Messerli@usz.ch [Division of Radiology and Nuclear Medicine, Cantonal Hospital St. Gallen (Switzerland); Kluckert, Thomas; Knitel, Meinhard [Division of Radiology and Nuclear Medicine, Cantonal Hospital St. Gallen (Switzerland); Rengier, Fabian [Department of Diagnostic and Interventional Radiology, University Hospital Heidelberg (Germany); Warschkow, René [Department of Surgery, Cantonal Hospital St. Gallen (Switzerland); Alkadhi, Hatem [Institute of Diagnostic and Interventional Radiology, University Hospital Zurich, University Zurich (Switzerland); Leschka, Sebastian [Division of Radiology and Nuclear Medicine, Cantonal Hospital St. Gallen (Switzerland); Institute of Diagnostic and Interventional Radiology, University Hospital Zurich, University Zurich (Switzerland); Wildermuth, Simon; Bauer, Ralf W. [Division of Radiology and Nuclear Medicine, Cantonal Hospital St. Gallen (Switzerland)
2016-12-15
Highlights: • Computer-aided detection (CAD) of solid pulmonary nodules was compared in 202 patients in standard dose and ultralow dose CT. • The per–nodule sensitivity of CAD was 70% in standard dose CT and 68% in ultralow dose CT. • The per–nodule sensitivity of CAD in standard dose CT was similar to ultralow dose CT in all size subgroups (all p > 0.05). • Adding CAD markings in ultralow dose CT significantly improved the sensitivity of two radiologists from 77% to 88% and from 66% to 79%, respectively. • CAD can serve as an excellent second reader for nodule detection in CT even at dose levels similar to chest X-ray. - Abstract: Objectives: To determine the value of computer-aided detection (CAD) for solid pulmonary nodules in ultralow radiation dose single-energy computed tomography (CT) of the chest using third-generation dual-source CT at 100 kV and fixed tube current at 70 mAs with tin filtration. Methods: 202 consecutive patients undergoing clinically indicated standard dose chest CT (1.8 ± 0.7 mSv) were prospectively included and scanned with an additional ultralow dose CT (0.13 ± 0.01 mSv) in the same session. Standard of reference (SOR) was established by consensus reading of standard dose CT by two radiologists. CAD was performed in standard dose and ultralow dose CT with two different reconstruction kernels. CAD detection rate of nodules was evaluated including subgroups of different nodule sizes (<5, 5–7, >7 mm). Sensitivity was further analysed in multivariable mixed effects logistic regression. Results: The SOR included 279 solid nodules (mean diameter 4.3 ± 3.4 mm, range 1–24 mm). There was no significant difference in per–nodule sensitivity of CAD in standard dose with 70% compared to 68% in ultralow dose CT both overall and in different size subgroups (all p > 0.05). CAD led to a significant increase of sensitivity for both radiologists reading the ultralow dose CT scans (all p < 0.001). In multivariable analysis, the use
-
International Nuclear Information System (INIS)
Messerli, Michael; Kluckert, Thomas; Knitel, Meinhard; Rengier, Fabian; Warschkow, René; Alkadhi, Hatem; Leschka, Sebastian; Wildermuth, Simon; Bauer, Ralf W.
2016-01-01
Highlights: • Computer-aided detection (CAD) of solid pulmonary nodules was compared in 202 patients in standard dose and ultralow dose CT. • The per–nodule sensitivity of CAD was 70% in standard dose CT and 68% in ultralow dose CT. • The per–nodule sensitivity of CAD in standard dose CT was similar to ultralow dose CT in all size subgroups (all p > 0.05). • Adding CAD markings in ultralow dose CT significantly improved the sensitivity of two radiologists from 77% to 88% and from 66% to 79%, respectively. • CAD can serve as an excellent second reader for nodule detection in CT even at dose levels similar to chest X-ray. - Abstract: Objectives: To determine the value of computer-aided detection (CAD) for solid pulmonary nodules in ultralow radiation dose single-energy computed tomography (CT) of the chest using third-generation dual-source CT at 100 kV and fixed tube current at 70 mAs with tin filtration. Methods: 202 consecutive patients undergoing clinically indicated standard dose chest CT (1.8 ± 0.7 mSv) were prospectively included and scanned with an additional ultralow dose CT (0.13 ± 0.01 mSv) in the same session. Standard of reference (SOR) was established by consensus reading of standard dose CT by two radiologists. CAD was performed in standard dose and ultralow dose CT with two different reconstruction kernels. CAD detection rate of nodules was evaluated including subgroups of different nodule sizes (<5, 5–7, >7 mm). Sensitivity was further analysed in multivariable mixed effects logistic regression. Results: The SOR included 279 solid nodules (mean diameter 4.3 ± 3.4 mm, range 1–24 mm). There was no significant difference in per–nodule sensitivity of CAD in standard dose with 70% compared to 68% in ultralow dose CT both overall and in different size subgroups (all p > 0.05). CAD led to a significant increase of sensitivity for both radiologists reading the ultralow dose CT scans (all p < 0.001). In multivariable analysis, the use
-
Room temperature ferromagnetism in Mg-doped ZnO nanoparticles
International Nuclear Information System (INIS)
Singh, Jaspal; Vashihth, A.; Gill, Pritampal Singh; Verma, N. K.
2015-01-01
Zn 1-x Mg x O (x = 0, 0,10) nanoparticles were successfully synthesized using sol-gel method. X-ray diffraction (XRD) confirms that the synthesized nanoparticles possess wurtzite phase having hexagonal structure. Morphological analysis was carried out using transmission electron microscopy (TEM) which depicts the spherical morphology of ZnO nanoparticles. Energy dispersive spectroscopy (EDS) showed the presence of Mg in ZnO nanoparticles. Electron spin resonance (ESR) signal was found to be decreasing with increasing of Mg-doping concentration. The room temperature ferromagnetism was observed in undoped and Mg-doped ZnO nanoparticles. The increase of Mg-doping concentration resulted in decrease of saturation magnetization value which could be attributed to decrease of oxygen vacancies present in host nanoparticles
-
Positron annihilation spectroscopy in doped p-type ZnO
Majumdar, Sayanee; Sanyal, D.
2011-07-01
Positron annihilation lifetime (PAL) spectroscopy has been used to investigate the vacancy type defect of the Li and N doped ZnO. The mono-vacancies, shallow -vacancies and open volume defects have been found in both the Li and N doped ZnO. The mono-vacancies, shallow-vacancies and open volume defects increase in N-doped ZnO as the size of N is quite high compared to Li. Positron annihilation study showed that the doping above 1-3% Li and 3-4% N in ZnO are not required in order to achieve low resistivity, high hole concentration and good mobility.
-
Synthesis, Characterization and Evaluation of the Cytotoxicity of Ni-Doped Zn(Se,S Quantum Dots
Directory of Open Access Journals (Sweden)
Melissa Cruz-Acuña
2015-01-01
Full Text Available Quantum dots (QDs are semiconductor nanocrystals with desirable optical properties for biological applications, such as bioimaging and drug delivery. However, the potential toxicity of these nanostructures in biological systems limits their application. The present work is focused on the synthesis, characterization, and evaluation of the toxicity of water-stable Ni-doped Zn(Se,S QDs. Also, the study of nondoped nanostructures was included for comparison purposes. Ni-doped nanostructures were produced from zinc chloride and selenide aqueous solutions in presence of 3-mercaptopropionic acid and Ni molar concentration of 0.001 M. In order to evaluate the potential cytoxicity of these doped nanostructures, human pancreatic carcinoma cells (PANC-1 were used as model. The cell viability was monitored in presence of Ni-doped Zn(Se,S QDs at concentrations ranging from 0 μg/mL to 500 μg/mL and light excited Ni-doped Zn(Se,S nanostructures were evaluated at 50 μg/mL. Results suggested that Ni-doped Zn(Se,S nanostructures were completely safe to PANC-1 when concentrations from 0 μg/mL to 500 μg/mL were used, whereas non-doped nanostructures evidenced toxicity at concentrations higher than 200 μg/mL. Also, Ni-doped Zn(Se,S QDs under light excitation do not evidence toxicity to PANC-1. These findings suggest strongly that Zn(Se,S nanostructures doped with nickel could be used in a safe manner in light-driving biological applications and drug delivery.
-
International Nuclear Information System (INIS)
Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui
2010-01-01
The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)
-
Silver antimony Ohmic contacts to moderately doped n-type germanium
Energy Technology Data Exchange (ETDEWEB)
Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)
2014-04-21
A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.
-
Chou, Ying-Nien; Sun, Fang; Hung, Hsiang-Chieh; Jain, Priyesh; Sinclair, Andrew; Zhang, Peng; Bai, Tao; Chang, Yung; Wen, Ten-Chin; Yu, Qiuming; Jiang, Shaoyi
2016-08-01
For surface-based diagnostic devices to achieve reliable biomarker detection in complex media such as blood, preventing nonspecific protein adsorption and incorporating high loading of biorecognition elements are paramount. In this work, a novel method to produce nonfouling zwitterionic hydrogel coatings was developed to achieve these goals. Poly(carboxybetaine acrylamide) (pCBAA) hydrogel thin films (CBHTFs) prepared with a carboxybetaine diacrylamide crosslinker (CBAAX) were coated on gold and silicon dioxide surfaces via a simple spin coating process. The thickness of CBHTFs could be precisely controlled between 15 and 150nm by varying the crosslinker concentration, and the films demonstrated excellent long-term stability. Protein adsorption from undiluted human blood serum onto the CBHTFs was measured with surface plasmon resonance (SPR). Hydrogel thin films greater than 20nm exhibited ultra-low fouling (crosslinked, purely zwitterionic, carboxybetaine thin film hydrogel (CBHTF) coating platform. The CBHTF on a hydrophilic surface demonstrated long-term stability. By varying the crosslinker content in the spin-coated hydrogel solution, the thickness of CBHTFs could be precisely controlled. Optimized CBHTFs exhibited ultra-low nonspecific protein adsorption below 5ng/cm(2) measured by a surface plasmon resonance (SPR) sensor, and their 3D architecture allowed antibody loading to reach 693ng/cm(2). This strategy provides a facile method to modify SPR biosensor chips with an advanced nonfouling material, and can be potentially expanded to a variety of implantable medical devices and diagnostic biosensors. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
-
Different annealing temperature suitable for different Mg doped P-GaN
Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Li, X.; Liu, W.; Zhang, L. Q.; Long, H.; Li, M.
2017-04-01
In this work, epitaxial GaN with different Mg doping concentration annealed at different temperature is investigated. Through Hall and PL spectra measurement we found that when Mg doping concentration is different, different annealing temperature is needed for obtaining the best p-type conduction of GaN, and this difference comes from the different influence of annealing on compensated donors. For ultra-heavily Mg doped sample, the process of Mg related donors transferring to non-radiative recombination centers is dominated, so the performance of P-GaN deteriorates with temperature increase. But for low Mg doped sample, the process of Mg related donors transfer to non-raditive recombination is weak compare to the Mg acceptor activation, so along the annealing temperature increase the performance GaN gets better.
-
Electronic structure of B-doped diamond: A first-principles study
Directory of Open Access Journals (Sweden)
T. Oguchi
2006-01-01
Full Text Available Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighbor C site to B shows a large energy shift of 1s core state, which may explain reasonably experimental features in recent photoemission and X-ray absorption spectra. Doping at interstitial Td site is found to be unstable compared with that at the substitutional site
-
International Nuclear Information System (INIS)
Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.
2010-01-01
The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .
-
Zhang, Meng; Liu, Yuxue; Zhu, Hancheng; Yan, Duanting; Yang, Jian; Zhang, Xinyang; Liu, Chunguang; Xu, Changshan
2016-07-28
Conductive C12A7:0.1%Gd(3+),y%Sr(2+) powders with different Sr(2+) doping concentrations have been prepared in a H2 atmosphere by a solid state method in combination with subsequent UV-irradiation. The encaged electron concentration could be modulated through tuning Sr(2+) doping and its maximum value reaches 2.3 × 10(19) cm(-3). This is attributed to the competition between enhanced uptake and the release of the encaged anions during their formation and diffusion processes and the suppression of encaged electrons generation due to the increased encaged OH(-) anions and the decreased encaged O(2-) anions. Although there exists encaged electrons and different encaged anions (O(2-), H(-) and OH(-)) in C12A7 conductive powders prepared through the hydrogen route, a dominant local environment around Gd(3+) could be observed using electron spin resonance (ESR) detection. It can be ascribed to the stronger coupling of the encaged OH(-) to the framework of C12A7 than those of the encaged electrons, O(2-) and H(-) anions. In addition, emission of Gd(3+) ions is enhanced under UV or low voltage electron beam excitation and a new local environment around Gd(3+) ions appears through the thermal annealing in air because of the decrease of the encaged OH(-) anions and the increase of the encaged O(2-) anions. Our results suggested that Sr(2+) doping in combination with thermal annealing in air is an effective strategy for increasing the conductive performance and enhancing the emission of rare earth ions doped into C12A7 conductive phosphors for low-voltage field emission displays (FEDs).
-
Study of Sn and Mg doping effects on TiO2/Ge stack structure by combinatorial synthesis
Nagata, Takahiro; Suzuki, Yoshihisa; Yamashita, Yoshiyuki; Ogura, Atsushi; Chikyow, Toyohiro
2018-04-01
The effects of Sn and Mg doping of a TiO2 film on a Ge substrate were investigated to improve leakage current properties and Ge diffusion into the TiO2 film. For systematic analysis, dopant-composition-spread TiO2 samples with dopant concentrations of up to 20.0 at. % were fabricated by RF sputtering and a combinatorial method. X-ray photoelectron spectroscopy revealed that the instability of Mg doping of TiO2 at dopant concentrations above 10.5 at. %. Both Sn and Mg dopants reduced Ge diffusion into TiO2. Sn doping enhanced the crystallization of the rutile phase, which is a high-dielectric-constant phase, although the Mg-doped TiO2 film indicated an amorphous structure. Sn-doping indicated systematic leakage current reduction with increasing dopant concentration. Doping at Sn concentrations higher than 16.8 at. % improved the leakage properties (˜10-7 A/cm2 at -3.0 V) and capacitance-voltage properties of metal-insulator-semiconductor (MIS) operation. The Sn doping of TiO2 may be useful for interface control and as a dielectric material for Ge-based MIS capacitors.
-
Electric fields in nonhomogeneously doped silicon. Summary of simulations
International Nuclear Information System (INIS)
Kotov, I.V.; Humanic, T.J.; Nouais, D.; Randel, J.; Rashevsky, A.
2006-01-01
Variations of the doping concentration inside a silicon device result in electric field distortions. These distortions, 'parasitic' fields, have been observed in Silicon Drift Detectors [D. Nouais, et al., Nucl. Instr. and Meth. A 501 (2003) 119; E. Crescio, et al., Nucl. Instr. and Meth. A 539 (2005) 250]. Electric fields inside a silicon device can be calculated for a given doping profile. In this study, the ATLAS device simulator. [Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA and s imulation/atlas.html>] was used to calculate the electric field inside an inhomogeneously doped device. Simulations were performed for 1D periodic doping profiles. Results show strong dependence of the parasitic field strength on the 'smoothness' of the doping profile
-
Thermal decomposition of potassium metaperiodate doped with trivalent ions
Energy Technology Data Exchange (ETDEWEB)
Muraleedharan, K., E-mail: kmuralika@gmail.com [Department of Chemistry, University of Calicut, Calicut, Kerala 673 635 (India); Kannan, M.P.; Gangadevi, T. [Department of Chemistry, University of Calicut, Calicut, Kerala 673 635 (India)
2010-04-20
The kinetics of isothermal decomposition of potassium metaperiodate (KIO{sub 4}), doped with phosphate and aluminium has been studied by thermogravimetry (TG). We introduced a custom-made thermobalance that is able to record weight decrease with time under pure isothermal conditions. The decomposition proceeds mainly through two stages: an acceleratory stages up to {alpha} = 0.50 and the decay stage beyond. The decomposition data for aluminium and phosphate doped KIO{sub 4} were found to be best described by the Prout-Tompkins equation. Separate kinetic analyses of the {alpha}-t data corresponding to the acceleratory region and decay region showed that the acceleratory stage gave the best fit with Prout-Tompkins equation itself whereas the decay stage fitted better to the contracting area equation. The rate of decomposition of phosphate doped KIO{sub 4} increases approximately linearly with an increase in the dopant concentration. In the case of aluminium doped KIO{sub 4}, the rate passes through a maximum with increase in the dopant concentration. The {alpha}-t data of pure and doped KIO{sub 4} were also subjected to isoconversional studies for the determination of activation energy values. Doping did not change the activation energy of the reaction. The results favour an electron-transfer mechanism for the isothermal decomposition of KIO{sub 4}, agreeing well with our earlier observations.
-
High-performance silicon nanotube tunneling FET for ultralow-power logic applications
Fahad, Hossain M.
2013-03-01
To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET\\'s effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.
-
International Nuclear Information System (INIS)
Sahin, Bünyamin; Kaya, Tolga
2016-01-01
Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.
-
Energy Technology Data Exchange (ETDEWEB)
Sahin, Bünyamin, E-mail: sahin38@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay, 31034 (Turkey); School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Kaya, Tolga [School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, 48859 (United States)
2016-01-30
Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.
-
Trap suppression by isoelectronic In or Sb doping in Si-doped n-GaAs grown by molecular-beam epitaxy
International Nuclear Information System (INIS)
Li, A.Z.; Kim, H.K.; Jeong, J.C.; Wong, D.; Schlesinger, T.E.; Milnes, A.G.
1988-01-01
The effects of isoelectronic doping of GaAs by In or Sb on the electron deep levels in n-GaAs grown by molecular-beam epitaxy have been investigated in the growth temperature range 500--600 0 C for Si doping levels of 4--7 x 10 16 cm -3 and As-stabilized conditions. The two dominant traps M3 and M6 are drastically reduced in concentration by up to three orders of magnitude for M3 (from 10 15 cm -3 down to 12 cm -3 ) and two and a half orders of magnitude for M6 by introducing 0.2--1 at.% In or Sb and increasing growth temperatures from 500 to 550 0 C. The trap concentrations of M3 and M6 were also significantly reduced by increasing the growth temperature to 600 0 C without In or Sb doping and by decreasing the growth rate from 1.0 to 0.3 μm/h. The incorporation coefficients of In and Sb have been measured and are found to decrease with increasing growth temperature. The growths with high M3 and M6 trap densities are shown to have short minority-carrier diffusion lengths. Indium isoelectronic doping, which is presumed to take place on a gallium sublattice site, and Sb doping, which is expected to take place on an arsenic sublattice site, appear to have rather similar effects in suppressing the concentration of the M3 and M6 electron traps. This suggest that both of these traps are in some way related to (V/sub As/V/sub Ga/) complexes or (V/sub As/XV/sub Ga/) complexes where X is different for M3 and M6 and might be interstitial or impurity related
-
Conductivity study of nitrogen-doped calcium zinc oxide prepared by spray pyrolysis
International Nuclear Information System (INIS)
Hsu, Yu-Ting; Lan, Wen-How; Huang, Kai-Feng; Lin, Jia-Ching; Chang, Kuo-Jen
2016-01-01
In this study, the spray pyrolysis method was used to prepare unintentionally doped and nitrogen-doped calcium zinc oxide films by using zinc acetate, calcium nitrate precursor, and ammonium acetate precursor. Morphological and structural analyses were conducted using scanning electron microscopy and X-ray diffraction. The results indicated that film grain size decreased as the nitrogen doping was increased. Both calcium oxide and zinc oxide structures were identified in the unintentionally doped calcium zinc oxide. When nitrogen doping was introduced, the film mainly exhibited a zinc oxide structure with preferred (002) and (101) orientations. The concentration and mobility were investigated using a Hall measurement system. P-type films with a mobility and concentration of 10.6 cm"2 V"−"1 s"−"1 and 2.8×10"1"7 cm"−"3, respectively, were obtained. Moreover, according to a temperature-dependent conductivity analysis, an acceptor state with activation energy 0.266 eV dominated the p-type conduction for the unintentionally doped calcium zinc oxide. By contrast, a grain boundary with a barrier height of 0.274–0.292 eV dominated the hole conduction for the nitrogen-doped calcium zinc oxide films.
-
Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.
2017-09-01
It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si
-
Gelija, Devarajulu; Borelli, Deva Prasad Raju
2018-02-01
The concentration variation of Ho3+ ion-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 glasses has been prepared by conventional melt quenching method. The thermal stability of 1 mol % of Ho3+-doped oxyfluorosilicate glass has been calculated using the differential thermal analysis (DTA) spectra. The phenomenological Judd-Ofelt intensity parameters Ωλ ( λ = 2, 4 and 6) were calculated for all concentrations of Ho3+ ions. The luminescence spectra in visible region of Ho3+ ion-doped glasses were recorded under the excitation wavelength of 452 nm. The spectra consists of several intense emission bands (5F4, 5S2) → 5I8 (547 nm), 5F3 → 5I8 (647 nm), 5F5 → 5I7 (660 nm) and (5F4, 5S2) → 5I7 (750 nm) in the range 500-780 nm. The fluorescence emission at ˜2.0 µm (5I7 → 5I8) was observed under the excitation of 488 nm Ar-ion laser. The stimulated emission cross section for 5I7 → 5I8 transition (˜2.0 µm) varies from 8.46 to 9.52 × 10-21 cm2, as calculated by the Fuchtbauer-Ladenburg (FL) theory. However, Mc-Cumber theory was used to calculate emission cross section values about 4.24-5.75 × 10-21 cm2 for the 5I7 → 5I8 transition in all concentrations of Ho3+-doped oxyfluorosilicate glasses. Therefore, these results reveal that the 0.5 mol % of Ho3+-doped oxyfluorosilicate glasses, exhibiting higher emission cross section, has potentially been used for laser applications at ˜ 2.0 µm.
-
Defect phase diagram for doping of Ga2O3
Lany, Stephan
2018-04-01
For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn), a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T), O partial pressures (pO2), and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor) center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2) conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.
-
International Nuclear Information System (INIS)
Hao Jie; Gong Ma-li; Du Peng-fei; Lu Bao-jie; Zhang Fan; Zhang Hai-tao; Fu Xing
2016-01-01
A novel concept of collision avoidance single-photon light detection and ranging (LIDAR) for vehicles has been demonstrated, in which chaotic pulse position modulation is applied on the transmitted laser pulses for robust anti-crosstalk purposes. Besides, single-photon detectors (SPD) and time correlated single photon counting techniques are adapted, to sense the ultra-low power used for the consideration of compact structure and eye safety. Parameters including pulse rate, discrimination threshold, and number of accumulated pulses have been thoroughly analyzed based on the detection requirements, resulting in specified receiver operating characteristics curves. Both simulation and indoor experiments were performed to verify the excellent anti-crosstalk capability of the presented collision avoidance LIDAR despite ultra-low transmitting power. (paper)
-
Silicon doped InP as an alternative plasmonic material for mid-infrared
DEFF Research Database (Denmark)
Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn
2016-01-01
Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...
-
Luminescent solar concentrators with fiber geometry.
Edelenbosch, Oreane Y; Fisher, Martyn; Patrignani, Luca; van Sark, Wilfried G J H M; Chatten, Amanda J
2013-05-06
The potential of a fibre luminescent solar concentrator has been explored by means of both analytical and ray-tracing techniques. Coated fibres have been found to be more efficient than homogeneously doped fibres, at low absorption. For practical fibres concentration is predicted to be linear with fibre length. A 1 m long, radius 1 mm, fibre LSC doped with Lumogen Red 305 is predicted to concentrate the AM1.5 g spectrum up to 1100 nm at normal incidence by ~35 x. The collection efficiency under diffuse and direct irradiance in London has been analysed showing that, even under clear sky conditions, in winter the diffuse contribution equals the direct.
-
Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application.
Kulanthaivel, Senthilguru; Roy, Bibhas; Agarwal, Tarun; Giri, Supratim; Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S; Maiti, Tapas K; Banerjee, Indranil
2016-01-01
The present study delineates the synthesis and characterization of cobalt doped proangiogenic-osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co(2+)) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP-OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic-osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. Copyright © 2015 Elsevier B.V. All rights reserved.
-
Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase
Neogi, S. K.; Karmakar, R.; Misra, A. K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.
2013-11-01
Structural, morphological, optical, and magnetic properties of nanocrystalline Zn1-xMnxO samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol-gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV-visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO3) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ1 and τ2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. Single phase structure has been observed up to 6 at% of Mn doping. Impurity phase has been developed above 6 at% of Mn doping. Antiferromagnetic and paramagnetic interactions are present in the samples. Defect parameters show sharp fall as Mn concentration above 6 at%. The magnetic and defect properties are modified by the formation of impurity phase.
-
Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase
International Nuclear Information System (INIS)
Neogi, S.K.; Karmakar, R.; Misra, A.K.; Banerjee, A.; Das, D.; Bandyopadhyay, S.
2013-01-01
Structural, morphological, optical, and magnetic properties of nanocrystalline Zn 1−x Mn x O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO 3 ) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ 1 and τ 2 are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase
-
Physical properties of antiferromagnetic Mn doped ZnO samples: Role of impurity phase
Energy Technology Data Exchange (ETDEWEB)
Neogi, S.K.; Karmakar, R. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); Misra, A.K. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India); Das, D. [UGC DAE Consortium for Scientific Research, Salt Lake, Kolkata 700064 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.in [Department of Physics, University of Calcutta, 92 A.P.C. Road, Kolkata 700009 (India); CRNN, University of Calcutta, JD 2, Sector III, Salt Lake, Kolkata 700098 (India)
2013-11-15
Structural, morphological, optical, and magnetic properties of nanocrystalline Zn{sub 1−x}Mn{sub x}O samples (x=0.01, 0.02, 0.04, 0.06, 0.08 and 0.10) prepared by the sol–gel route are studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), UV–visible absorption spectroscopy, Superconducting quantum interference device (SQUID) magnetometry and positron annihilation lifetime spectroscopy (PALS). XRD confirms formation of wurzite structure in all the Mn-substituted samples. A systematic increase in lattice constants and decrease in grain size have been observed with increase in manganese doping concentration up to 6 at% in the ZnO structure. An impurity phase (ZnMnO{sub 3}) has been detected when percentage of Mn concentration is 6 at% or higher. The optical band gap of the Mn-substituted ZnO samples decrease with increase in doping concentration of manganese whereas the width of the localized states increases. The antiferromagnetic exchange interaction is strong in the samples for 2 and 4 at% of Mn doping but it reduces when the doping level increases from 6 at% and further. Positron life time components τ{sub 1} and τ{sub 2} are found to decrease when concentration of the dopant exceeds 6 at%. The changes in magnetic properties as well as positron annihilation parameters at higher manganese concentration have been assigned as due to the formation of impurity phase. - highlights: • Single phase structure has been observed up to 6 at% of Mn doping. • Impurity phase has been developed above 6 at% of Mn doping. • Antiferromagnetic and paramagnetic interactions are present in the samples. • Defect parameters show sharp fall as Mn concentration above 6 at%. • The magnetic and defect properties are modified by the formation of impurity phase.
-
Application of neutron activation to the characterization of silicon doping technological procedures
International Nuclear Information System (INIS)
Jourdain, Daniel.
1976-01-01
Neutron activation techniques (examples of reactions, emission spectra) are recalled. Autoradiography is studied in detail: a theoretical study of the phenomena involved and the parameters that have an effect on the resolution, is made. Concentration profiles of doping impurities are analyzed in the case of ion implantation and deep diffusion. Autoradiography was applied to the study of the following technological problems: phosphorus and gold deep diffusion, phosphorus and arsenic ion implantation, deposition and diffusion of phosphorus-doped oxides. Correlations between doping material concentration and electric parameters such as recovering time and surface resistance were looked for [fr
-
The origin of current blocking in interfacial conduction in Sr-doped lanthanum gallates
Park, Hee Jung
2018-02-01
The grain boundary transport of lanthanum gallate has been studied with various doping concentrations, and the origins of blocking on the grain boundary are compared. La1-xSrxGaO3 samples (x = 0.005, 0.01, 0.05 and 0.1) have been prepared and their bulk (grain) and grain boundary resistances been experimentally measured as a function of temperature (T: 200-550 °C) and oxygen partial pressure (Po2) using ac-impedance measurements. In addition, Hebb-Wagner polarization measurements have been conducted to investigate the electrical conductivity of minor charge carriers in the lanthanum gallates. The grain boundary resistance in the low-doped materials (x = 0.005 and 0.01) increases with increasing Po2 while in the highly-doped materials (x = 0.05, 0.1) it hardly depended on Po2. At lower concentrations conduction is mixed and at higher concentrations is found to be predominantly ionic conductivity. The space charge model successfully describes the mixed conduction at the grain boundary at low-doping, but does not explain the predominant ionic conductivity at high-doping. The origin of blocking at high-doping is explained by the crystallographic asymmetry of the grain boundary with respect to the bulk and/or Sr-segregation.
-
Nitrogen-doped graphene by microwave plasma chemical vapor deposition
International Nuclear Information System (INIS)
Kumar, A.; Voevodin, A.A.; Paul, R.; Altfeder, I.; Zemlyanov, D.; Zakharov, D.N.; Fisher, T.S.
2013-01-01
Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface
-
Nitrogen-doped graphene by microwave plasma chemical vapor deposition
Energy Technology Data Exchange (ETDEWEB)
Kumar, A., E-mail: kumar50@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, A.A. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Paul, R. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Altfeder, I. [Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Zemlyanov, D.; Zakharov, D.N. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Fisher, T.S., E-mail: tsfisher@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)
2013-01-01
Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface.
-
Electrical properties of lightly Ga-doped ZnO nanowires
Alagha, S.; Heedt, S.; Vakulov, D.; Mohammadbeigi, F.; Senthil Kumar, E.; Schäpers, Th; Isheim, D.; Watkins, S. P.; Kavanagh, K. L.
2017-12-01
We investigated the growth, crystal structure, elemental composition and electrical transport characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in the UV-range. Nominally-undoped and Ga-doped ZnO nanowires were grown by metal-organic chemical vapor deposition. Photoluminescence measurements confirmed the incorporation of Ga via donor-bound exciton emission. With atom-probe tomography we estimated an upper limit of the Ga impurity concentration ({10}18 {{cm}}-3). We studied the electrical transport characteristics of these nanowires with a W-nanoprobe technique inside a scanning electron microscope and with lithographically-defined contacts allowing back-gated measurements. An increase in apparent resistivity by two orders of magnitude with decreasing radius was measured with both techniques with a much larger distribution width for the nanoprobe method. A drop in the effective carrier concentration and mobility was found with decreasing radius which can be attributed to carrier depletion and enhanced scattering due to surface states. Little evidence of a change in resistivity was observed with Ga doping, which indicates that the concentration of native or background dopants is higher than the Ga doping concentration.
-
Exploiting the natural doping gradient of Nd:YLF crystals for high-power end pumped lasers
CSIR Research Space (South Africa)
Bollig, C
2008-01-01
Full Text Available decided to use crystals of a doping concentration below the 0.5% previously used. In addition, researchers decided to exploit the natural doping gradient along the length of the boule, which is especially pronounced at low concentrations but commonly...
-
Energy Technology Data Exchange (ETDEWEB)
Yahia, I.S. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Shkir, Mohd, E-mail: shkirphysics@gmail.com [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); AlFaify, S.; Ganesh, V. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Zahran, H.Y. [Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Nano-Science & Semiconductor Labs, Metallurgical Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, 11757 Cairo (Egypt); Kilany, Mona [Department of Biology, Faculty of Science, King Khalid University, P.O. Box 9004, Abha 61413 (Saudi Arabia); Department of Microbiology, National Organization for Drug Control and Research (NODCAR), Cairo (Egypt)
2017-03-01
In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24 wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10 nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5 nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15 nm to 62 nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis > Candida albicans > Shigella dysenteriae. - Highlights: • The crystallinity was found to be enhanced and so the crystal size with Te doping. • The enhancement in the relative permittivity was observed at some concentrations. • The linear absorption coefficient was found to be enhanced by Te doping. • Te doped HAp may be used for radiation shielding applications in medical. • The antimicrobial activity was found to be enhanced with Te
-
International Nuclear Information System (INIS)
Yahia, I.S.; Shkir, Mohd; AlFaify, S.; Ganesh, V.; Zahran, H.Y.; Kilany, Mona
2017-01-01
In this work, the authors have fabricated the nanorods and nanosheets of pure and Te-doped HAp with different Te concentrations (0.04, 0.08, 0.16, 0.24 wt%) by microwave-assisted technique at low temperature. The crystallite size, degree of crystallinity and lattice parameters are calculated. FE-SEM study confirms that the fabricated nanostructures are nanorods of diameter about 10 nm in undoped and at low concentration of Te doping. However, at and higher concentration, it becomes nanosheets of about 5 nm thickness. X-ray diffraction, FT-IR and FT-Raman studies shows that the prepared products are of HAp and Te has been successfully incorporated. From EDX the Ca/P molar ratio of the pure HAp is about 1.740, while this ratio for 0.04, 0.08, 0.16, 0.24 wt% Te doped is about 1.53, 1.678, 1.724, 1.792, respectively. Crystallite size was found to be increased with Te doping from 15 nm to 62 nm. The value of dielectric constant is found to be enhanced at higher concentrations of Te. The values of linear absorption coefficient were also determined and show that the prepared material with Te doping is more absorbable than pure and will be highly applicable in radiation detection applications. Furthermore, the antimicrobial potential of pure and Te doped HAp was examined against some Gram- negative and positive bacteria and fungi by agar disk diffusion method. The results demonstrated that the antimicrobial activity of Te doped HAp is stronger than that of pure HAp where it exhibited the highest activity against Bacillus subtilis > Candida albicans > Shigella dysenteriae. - Highlights: • The crystallinity was found to be enhanced and so the crystal size with Te doping. • The enhancement in the relative permittivity was observed at some concentrations. • The linear absorption coefficient was found to be enhanced by Te doping. • Te doped HAp may be used for radiation shielding applications in medical. • The antimicrobial activity was found to be enhanced with Te
-
Shen, Fei-Ran; Kuang, Hao; Hu, Feng-Xia; Wu, Hui; Huang, Qing-Zhen; Liang, Fei-Xiang; Qiao, Kai-Ming; Li, Jia; Wang, Jing; Liu, Yao; Zhang, Lei; He, Min; Zhang, Ying; Zuo, Wen-Liang; Sun, Ji-Rong; Shen, Bao-Gen
2017-10-01
Materials with zero thermal expansion (ZTE) or precisely tailored thermal expansion are in urgent demand of modern industries. However, the overwhelming majority of materials show positive thermal expansion. To develop ZTE or negative thermal expansion (NTE) materials as compensators has become an important challenge. Here, we present the evidence for the realization of ultra-low thermal expansion in Mn-Co-Ge-In particles. The bulk with the Ni2In-type hexagonal structure undergoes giant NTE owing to a martensitic magnetostructural transition. The major finding is that the thermal expansion behavior can be totally controlled by modulating the crystallinity degree and phase transition from atomic scale. Self-compensation effect leads to ultra-low thermal expansion with a linear expansion coefficient as small as +0.68 × 10-6/K over a wide temperature range around room temperature. The present study opens an avenue to reach ZTE particularly from the large class of giant NTE materials based on phase transition.
-
Directory of Open Access Journals (Sweden)
Fei-Ran Shen
2017-10-01
Full Text Available Materials with zero thermal expansion (ZTE or precisely tailored thermal expansion are in urgent demand of modern industries. However, the overwhelming majority of materials show positive thermal expansion. To develop ZTE or negative thermal expansion (NTE materials as compensators has become an important challenge. Here, we present the evidence for the realization of ultra-low thermal expansion in Mn–Co–Ge–In particles. The bulk with the Ni2In-type hexagonal structure undergoes giant NTE owing to a martensitic magnetostructural transition. The major finding is that the thermal expansion behavior can be totally controlled by modulating the crystallinity degree and phase transition from atomic scale. Self-compensation effect leads to ultra-low thermal expansion with a linear expansion coefficient as small as +0.68 × 10−6/K over a wide temperature range around room temperature. The present study opens an avenue to reach ZTE particularly from the large class of giant NTE materials based on phase transition.
-
A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes
Gasmi, Khaled
2018-02-01
An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm × 90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.
-
Discharge characteristics of plasma display panels with Si-doped MgO protective layers
Energy Technology Data Exchange (ETDEWEB)
Ram, Sanjay K., E-mail: sanjayk.ram@gmail.co [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Barik, U K [Samtel Color Limited, Ghaziabad-201009 (India); Sarkar, Surajit; Biswas, Paramananda [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India); Singh, Vandana [Laboratoire de Physique des Interfaces et des Couches Minces (UMR 7647 du CNRS), Ecole Polytechnique, 91128 Palaiseau Cedex (France); Dwivedi, H K [Samtel Color Limited, Ghaziabad-201009 (India); Kumar, Satyendra [Department of Physics, Indian Institute of Technology Kanpur, Kanpur-208016 (India)
2009-10-01
We report on our study of the influence of varying concentrations of Si doping on the secondary electron emission (SEE) yield of MgO thin films prepared by electron beam evaporation technique. The series of Si-doped MgO films were microstructurally characterized with various tools like X-ray diffraction, scanning electron microscopy and atomic force microscopy. The optimization of the concentration of Si doping is seen to enhance the SEE yield. We discuss the correlation of SEE yield in the context of different deposition and measurement conditions and crystalline orientation.
-
International Nuclear Information System (INIS)
Ji, Yuexia; Cao, Jiafeng; Xu, Jinlong; You, Zhenyu; Zhu, Zhaojie; Li, Jianfu; Wang, Yan; Tu, Chaoyang
2013-01-01
Highlights: •Yb 3+ :LaCa 4 O(BO 3 ) 3 single crystal was grown with high concentration doping. •Laser potentiality was evaluated based on the spectral and laser parameters. •Continuous wave laser operation was realized. •An output power of 0.77 W and a slope efficiency of 15.71% at 1077 nm were obtained. •The spectra and laser properties of Yb 3+ :LaCa 4 O(BO 3 ) 3 crystal were firstly reported. -- Abstract: High concentration of 15 at.% Yb 3+ doped LaCa 4 O(BO 3 ) 3 (LaCOB) crystal was grown by Czochralski technique. The absorption cross section was conclulated to be 0.63 × 10 −20 cm 2 at 977 nm and the emission cross section to be 0.39 × 10 −20 cm 2 at 1030 nm, with the FWHM of 6.15 and 33 nm respectively. Laser potentiality was evaluated based on the gain cross section σ g , the minimum inversion fraction β min and the minimum pump intensity I min , which were calculated to be 0.18 × 10 −20 cm 2 , 0.05 and 0.47 kw/cm 2 , respectively. Continuous wave laser operation was realized with an output power of 0.77 W and a slope efficiency of 15.71%. The laser emitted around 1077 nm. The radiation trapping and continuous pump mode are contributed to the lasing wavelength for present crystal
-
Development of ultra-low pressure reverse osmosis membranes; Choteiatsu gyakushintomaku no kaihatsu
Energy Technology Data Exchange (ETDEWEB)
Hirose, M.; Ito, H.; Ohara, T. [Nitto Denko Corp., Osaka (Japan)
1998-06-05
Described herein is development of ultra-low pressure reverse osmosis (RO) membranes. The composite RO membrane, which is now widely used, has a cross-sectional structure consisting of an ultrafilter membrane as the support and a very thin skin layer responsible for filtration. It is confirmed that the skin layer is of a pleated structure. Growing this structure can greatly accelerate permeation of water without damaging arresting and durability characteristics of the membrane, and hence is a desired approach. Utilization of molecular structure simulation of the skin layer materials is investigated by the molecular dynamics. The results show that the stable structure of the material for the skin layer in the RO membrane is a network structure with regularly arranged honeycombs, when it should arrest at least 99% of salt. These techniques serve as the bases for development of the ultra-low pressure RO membranes (ES Series), where the skin layer is made of cross-linked, totally aromatic polyamide. The membrane passes twice as large a quantity of water as the conventional one, is highly resistant to chemicals, and arrests 99.7% of salt. 3 refs., 4 figs.
-
Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films
Energy Technology Data Exchange (ETDEWEB)
Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)
2016-01-01
Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.
-
Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications
Chen, Hsuen-Li; Hsieh, Chung-I; Cheng, Chao-Chia; Chang, Chia-Pin; Hsu, Wen-Hau; Wang, Way-Seen; Liu, Po-Tsun
2005-07-01
Ultralow dielectric constant (polymers. We demonstrate two structures, ridge waveguides and large-angle Y-branch power splitters, composed of PPSZ and SU8 films to illustrate the use of low dielectric constant (K) cladding materials. The simulation results indicate that the PPSZ films provide better confinement of light. Experimentally, a large-angle Y-branch power splitter with PPSZ cladding can be used to guide waves with the large branching angle of 33.58°.
-
Electrical properties of phosphorene systems doped with fourth-period elements
Wang, Ke; Wang, Hai; Zhang, Min; Liu, Yan; Zhao, Wei
2018-05-01
In this work, we use a first-principles calculation to investigate the structure, binding energies, and electrical properties of monolayer phosphorene systems doped with fourth-period main group elements at a doping concentration of 6.25%. The calculation results reveal that, although large deformations exist, all doped systems are stable and non-spin polarized. In addition, the Ca, Se, and Br atoms are electron acceptors in the doped systems, whereas the Ga, Ge and As atoms are donors. Thus, there is an ionic bonding character between the dopants and neighboring phosphorus atoms in the Ca-, Ga-, Ge-, As-, Se-, and Br-doped systems. From band structures, we find that the K-, Ga-, As-, and Br-doped systems present semiconducting states with indirect gaps, whereas the Ca-, Ge-, and Se-doped systems have metallic states. We conclude that the metallicity of a phosphorene system doped with main-group elements depends on the number of valence electrons of the dopant. This investigation provides directions for manipulating the electrical properties of phosphorene by substitutional doping, which would broaden its possible applications in optoelectronics.
-
A Study of Submicron Grain Boundary Precipitates in Ultralow Carbon 316LN Steels
Downey, S.; Han, K.; Kalu, P. N.; Yang, K.; Du, Z. M.
2010-04-01
This article reports our efforts in characterization of an ultralow carbon 316LN-type stainless steel. The carbon content in the material is one-third that in a conventional 316LN, which further inhibits the formation of grain boundary carbides and therefore sensitizations. Our primary effort is focused on characterization of submicron size precipitates in the materials with the electron backscatter diffraction (EBSD) technique complemented by Auger electron spectroscopy (AES). Thermodynamic calculations suggested that several precipitates, such as M23C6, Chi, Sigma, and Cr2N, can form in a low carbon 316LN. In the steels heat treated at 973 K (700 °C) for 100 hours, a combination of EBSD and AES conclusively identified the grain boundary precipitates (≥100 nm) as Cr2N, which has a hexagonal closed-packed crystallographic structure. Increases of the nitrogen content promote formation of large size Cr2N precipitates. Therefore, prolonged heat treatment at relatively high temperatures of ultralow carbon 316LN steels may result in a sensitization.
-
Ultra-Low Power Sensor System for Disaster Event Detection in Metro Tunnel Systems
Directory of Open Access Journals (Sweden)
Jonah VINCKE
2017-05-01
Full Text Available In this extended paper, the concept for an ultra-low power wireless sensor network (WSN for underground tunnel systems is presented highlighting the chosen sensors. Its objectives are the detection of emergency events either from natural disasters, such as flooding or fire, or from terrorist attacks using explosives. Earlier works have demonstrated that the power consumption for the communication can be reduced such that the data acquisition (i.e. sensor sub-system becomes the most significant energy consumer. By using ultra-low power components for the smoke detector, a hydrostatic pressure sensor for water ingress detection and a passive acoustic emission sensor for explosion detection, all considered threats are covered while the energy consumption can be kept very low in relation to the data acquisition. In addition to 1 the sensor system is integrated into a sensor board. The total average power consumption for operating the sensor sub-system is measured to be 35.9 µW for lower and 7.8 µW for upper nodes.
-
Hydrothermal synthesis of Fe-doped TiO2 nanostructure photocatalyst
International Nuclear Information System (INIS)
Nguyen, Van Nghia; Nguyen, Ngoc Khoa Truong; Nguyen, Phi Hung
2011-01-01
Fe-doped TiO 2 catalyst was prepared by the hydrothermal method. The resulting nanopowders were characterized by x-ray diffraction, transmission electron microscopy and Raman and UV-visible spectroscopies. The photocatalytic activity of the Fe-doped TiO 2 was tested by decomposition of methylene orange with a concentration of 10 mg l −1 in aqueous solution. The obtained results showed that methylene orange was significantly degraded after irradiation for 90 min under a halogen lamp and sunlight. The doping effect on the photocatalytic activity of the iron-doped catalyst samples are discussed
-
Tuning electronic properties of In2O3 nanowires by doping control
International Nuclear Information System (INIS)
Lei, B.; Li, C.; Zhang, D.; Tang, D.; Zhou, C.
2004-01-01
We present two effective routes to tune the electronic properties of single-crystalline In 2 O 3 nanowires by controlling the doping. The first method involves using different O 2 concentrations during the synthesis. Lightly (heavily) doped nanowires were produced by using high (low) O 2 concentrations, respectively, as revealed by the conductances and threshold voltages of nanowire-based field-effect transistors. Our second method exploits post-synthesis baking, as baking heavily doped nanowires in ambient air led to suppressed conduction and a positive shift of the threshold voltage, whereas baking lightly doped nanowires in vacuum displayed the opposite behavior. Our approaches offer viable ways to tune the electronic properties of many nonstoichiometric metal oxide systems such as In 2 O 3 , SnO 2 , and ZnO nanowires for various applications
-
Energy Technology Data Exchange (ETDEWEB)
Chen, P.; Zhao, D. G., E-mail: dgzhao@red.semi.ac.cn; Jiang, D. S.; Zhu, J. J.; Liu, Z. S.; Yang, J.; Li, X.; Le, L. C.; He, X. G.; Liu, W.; Li, X. J.; Liang, F. [State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China); Zhang, B. S.; Yang, H. [Key Laboratory of Nano-devices and Applications of CAS, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Zhang, Y. T.; Du, G. T. [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023 (China)
2016-03-15
In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN) interlayer is inserted between InGaN/GaN multiple quantum well active region and Al{sub 0.2}Ga{sub 0.8}N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.
-
Directory of Open Access Journals (Sweden)
P. Chen
2016-03-01
Full Text Available In order to reduce the internal optical loss of InGaN laser diodes, an unintentionally doped GaN (u-GaN interlayer is inserted between InGaN/GaN multiple quantum well active region and Al0.2Ga0.8N electron blocking layer. The thickness design of u-GaN interlayer matching up with background doping level for improving laser performance is studied. It is found that a suitably chosen u-GaN interlayer can well modulate the optical absorption loss and optical confinement factor. However, if the value of background doping concentration of u-GaN interlayer is too large, the output light power may decrease. The analysis of energy band diagram of a LD structure with 100 nm u-GaN interlayer shows that the width of n-side depletion region decreases when the background concentration increases, and may become even too small to cover whole MQW, resulting in a serious decrease of the output light power. It means that a suitable interlayer thickness design matching with the background doping level of u-GaN interlayer is significant for InGaN-based laser diodes.
-
Growth and scintillation properties of Pr doped YAP with different Pr concentrations
International Nuclear Information System (INIS)
Yanagida, Takayuki; Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki; Yamaji, Akihiro; Yokota, Yuui; Yoshikawa, Akira
2010-01-01
Pr 3+ 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down (μ-PD) method. Pr 3+ 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The μ-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under 137 Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400±2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr 3+ 5d-4f transition.
-
Growth and scintillation properties of Pr doped YAP with different Pr concentrations
Energy Technology Data Exchange (ETDEWEB)
Yanagida, Takayuki, E-mail: t_yanagi@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yamaji, Akihiro [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yokota, Yuui [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)
2010-11-21
Pr{sup 3+} 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down ({mu}-PD) method. Pr{sup 3+} 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The {mu}-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under {sup 137}Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400{+-}2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr{sup 3+} 5d-4f transition.
-
Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo
2014-10-01
Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca2+ with Fe3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu3+ and Fe3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu3+ and Fe3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu3+ and Fe3+, and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.
-
International Nuclear Information System (INIS)
Chen, Min-Hua; Lin, Feng-Huei; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Tanaka, Junzo; Hanagata, Nobutaka
2014-01-01
Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications. (paper)
-
Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo
2014-10-01
Theranostic nanoparticles currently have been regarded as an emerging concept of 'personalized medicine' with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.
-
Energy Technology Data Exchange (ETDEWEB)
Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong
2012-03-30
Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.
-
International Nuclear Information System (INIS)
Moselund, K E; Ghoneim, H; Schmid, H; Bjoerk, M T; Loertscher, E; Karg, S; Signorello, G; Webb, D; Tschudy, M; Beyeler, R; Riel, H
2010-01-01
In this work we investigate doping by solid-state diffusion from a doped oxide layer, obtained by plasma-enhanced chemical vapor deposition (PECVD), as a means for selectively doping silicon nanowires (NWs). We demonstrate both n-type (phosphorous) and p-type (boron) doping up to concentrations of 10 20 cm -3 , and find that this doping mechanism is more efficient for NWs as opposed to planar substrates. We observe no diameter dependence in the range of 25 to 80 nm, which signifies that the NWs are uniformly doped. The drive-in temperature (800-950 deg. C) can be used to adjust the actual doping concentration in the range 2 x 10 18 to 10 20 cm -3 . Furthermore, we have fabricated NMOS and PMOS devices to show the versatility of this approach and the possibility of achieving segmented doping of NWs. The devices show high I on /I off ratios of around 10 7 and, especially for the PMOS, good saturation behavior and low hysteresis.
-
Spray deposited gallium doped tin oxide thinfilm for acetone sensor application
Preethi, M. S.; Bharath, S. P.; Bangera, Kasturi V.
2018-04-01
Undoped and gallium doped (1 at.%, 2 at.% and 3 at.%) tin oxide thin films were prepared using spray pyrolysis technique by optimising the deposition conditions such as precursor concentration, substrate temperature and spraying rate. X-ray diffraction analysis revealed formation of tetragonally structured polycrystalline films. The SEM micrographs of Ga doped films showed microstructures. The electrical resistivity of the doped films was found to be more than that of the undoped films. The Ga-doped tin oxide thin films were characterised for gas sensors. 1 at.% Ga doped thin films were found to be better acetone gas sensor, showed 68% sensitivity at 350°C temperature.
-
Ultra-low pollutant emission combustion method and apparatus
International Nuclear Information System (INIS)
Khinkis, M.J.
1992-01-01
This patent describes a method for ultra-low pollutant emission combustion of fossil fuel. It comprises: introducing into a primary combustion chamber a first fuel portion of about 1 percent to about 20 percent of a total fuel to be combusted; introducing primary combustion air into the primary combustion chamber; introducing a first portion of water into the primary combustion chamber, having a first water heat capacity equivalent to a primary combustion air heat capacity of one of a primary combustion air amount of about 10 percent to about 60 percent of the first stoichiometirc requirement for complete combustion of the first fuel portion and an excess primary combustion air amount of about 20 percent to about 150 percent of the first stoichiometric requirement for complete combustion of the first fuel portion; burning the first fuel portion with the primary combustion air in the primary combustion chamber at a temperature abut 2000 degrees F to about 2700 degrees F producing initial combustion products; passing the initial combustion products into a secondary combustion chamber; introducing into the secondary combustion chamber a second fuel portion of about 80 percent to about 99 percent of the total fuel to be combusted; introducing secondary combustion air into the secondary combustion chamber in an amount of about 105 percent to about 130 percent of a second stoichiometric requirement for complete combustion of the second fuel portion; introducing a second portion of water into the secondary combustion chamber; burning the second fuel portion and any remaining fuel in the initial combustion products; passing the final combustion products into a dilution chamber; introducing dilution air into the dilution chamber; discharging the ultra-low pollutant emission vitiated air form the dilution chamber
-
Ultra-low dispersion spectroscopy of stars and galaxies
International Nuclear Information System (INIS)
Bappu, M.K.V.; Parthasarathy, M.
1977-01-01
Application of ultra-low dispersion spectroscopy 10,000 A mm - 1 , is described to study the nuclei of elliptical galaxies, the quasi-stellar objects and for the discovery of faint OB stars, reddened stars and red stars. The instrument used is an f/2 slitless spectrograph with a three degree quartz prism at the Cassegrain focus of the 102-cm Ritchey-Chratien reflector at Kavalur. The spectra cover a field of 40 minutes of arc and the dispersion is 10,000 A mm - 1 . Ultra-low dispersion spectra (microspectra) were obtained for fifteen elliptical and three SO galaxies from the list of Ekers and Ekers (1973) who classified them as compact and extended sources from the observations of radio emission at 6 cms. From an analysis of micro-spectra and from direct photographs with graded exposure times, it is found that all compact radio galaxies in the Ekers list also have optically compact nuclei. Some of these elliptical galaxies with compact nuclei show enhancement of intensity in the blue violet region. From an examination of microspectra of forty-three of the known quasi-stellar objects of different redshifts it is found that the most striking characteristic of the spectra is their flat appearance. This characteristic flatness is also noticed in the microspectrum of the large redshift quasi-stellar objects like OH 471 and OQ 172 which do not have UV excess. Because of this characteristic difference in the appearance of the microspectra of the quasi-stellar objects and stellar objects, it is possible to detect new OSO's with this technique. An application of this technique to detect red stars in our galaxy and in the Large Magellanic cloud is discussed. (author)
-
Specific gravity and API gravity of biodiesel and ultra-low sulfur diesel (ULSD) blends
Biodiesel is an alternative fuel made from vegetable oils and animal fats. In 2006, the U. S. Environmental Protection Agency mandated a maximum sulfur content of 15 ppm in on-road diesel fuels. Processing to produce the new ultra-low sulfur petrodiesel (ULSD) alters specific gravity (SG) and othe...
-
Energy Technology Data Exchange (ETDEWEB)
Mousavi-Khoshdel, S. Morteza, E-mail: mmousavi@iust.ac.ir [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Jahanbakhsh-bonab, Parisa [Department of Chemistry, Iran University of Science and Technology, Tehran (Iran, Islamic Republic of); Targholi, Ehsan [Young Researchers and Elite Club, Abhar Branch, Islamic Azad University, Abhar (Iran, Islamic Republic of)
2016-10-07
Using DFT calculations, we study the structural parameters, electronic properties and quantum capacitance of N, B, and P-doped armchair carbon nanotubes (CNTs). Fermi level shifts towards conduction band and valence band in N- and B-doped CNTs, respectively. While in the case of P atom, despite having an extra valence electron than carbon, there is no shift in Fermi level. The results revealed from a symmetric capacitance enhancement in P-doped CNT and an asymmetric capacitance enhancement in B and N-doped CNTs. The greatest amount of quantum capacitance of N-doped (6, 6) CNT could be achieved at the concentration range of 0.1–0.15. - Highlights: • Exploration of variation in quantum capacitance of CNTs through doping N, B and P atoms. • Quantum capacitance of CNTs is sensitive to impurities entered in carbon nanotubes. • Maximum quantum capacitance of N-doped CNTs is achieved at the concentration range of 0.1–0.15.
-
Energy Technology Data Exchange (ETDEWEB)
Abadli, S. [Department of Electrical Engineering, University Aout 1955, Skikda, 21000 (Algeria); LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Mansour, F. [LEMEAMED, Department of Electronics, University Mentouri, Constantine, 25000 (Algeria); Pereira, E. Bedel [CNRS-LAAS, 7 avenue du colonel Roche, 31077 Toulouse (France)
2012-10-15
We have investigated the complex behaviour of boron (B) redistribution process via silicon thin bi-layers interface. It concerns the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method at 480 C, by using in-situ nitrogen-doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P{sup +}) layer. To avoid long-range B redistributions, thermal annealing was carried out at relatively low-temperatures (600 C and 700 C) for various times ranging between 30 min and 2 h. To investigate the experimental secondary ion mass spectroscopy (SIMS) doping profiles, a redistribution model well adapted to the particular structure of two thin layers and to the effects of strong-concentrations has been established. The good adjustment of the simulated profiles with the experimental SIMS profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders. The increasing kinetics of the B peak concentration near the bi-layers interface is well reproduced by the established model. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
-
International Nuclear Information System (INIS)
Gelija, Devarajulu; Borelli, Deva Prasad Raju
2018-01-01
The concentration variation of Ho 3+ ion-doped SiO 2 -Al 2 O 3 -Na 2 CO 3 -SrF 2 -CaF 2 glasses has been prepared by conventional melt quenching method. The thermal stability of 1 mol % of Ho 3+ -doped oxyfluorosilicate glass has been calculated using the differential thermal analysis (DTA) spectra. The phenomenological Judd-Ofelt intensity parameters Ω λ (λ = 2, 4 and 6) were calculated for all concentrations of Ho 3+ ions. The luminescence spectra in visible region of Ho 3+ ion-doped glasses were recorded under the excitation wavelength of 452 nm. The spectra consists of several intense emission bands ( 5 F 4 , 5 S 2 ) → 5 I 8 (547 nm), 5 F 3 → 5 I 8 (647 nm), 5 F 5 → 5 I 7 (660 nm) and ( 5 F 4 , 5 S 2 ) → 5 I 7 (750 nm) in the range 500-780 nm. The fluorescence emission at ∝ 2.0 μm ( 5 I 7 → 5 I 8 ) was observed under the excitation of 488 nm Ar-ion laser. The stimulated emission cross section for 5 I 7 → 5 I 8 transition (∝ 2.0 μm) varies from 8.46 to 9.52 x 10 -21 cm 2 , as calculated by the Fuchtbauer-Ladenburg (FL) theory. However, Mc-Cumber theory was used to calculate emission cross section values about 4.24-5.75 x 10 -21 cm 2 for the 5 I 7 → 5 I 8 transition in all concentrations of Ho 3+ -doped oxyfluorosilicate glasses. Therefore, these results reveal that the 0.5 mol % of Ho 3+ -doped oxyfluorosilicate glasses, exhibiting higher emission cross section, has potentially been used for laser applications at ∝ 2.0 μm. (orig.)
-
International Nuclear Information System (INIS)
Antony, Rajini P.; Mathews, Tom; Ajikumar, P.K.; Krishna, D. Nandagopala; Dash, S.; Tyagi, A.K.
2012-01-01
Graphical abstract: Display Omitted Highlights: ► Single step electrochemical synthesis of N-doped TiO 2 nanotube array films. ► Effective substitutional N-doping achieved. ► Different N-concentrations were achieved by varying the N-precursor concentration in the electrolyte. ► Visible light absorption observed at high N-doping. -- Abstract: Visible light absorbing vertically aligned N-doped anatase nanotube array thin films were synthesized by anodizing Ti foils in ethylene glycol + NH 4 F + water mixture containing urea as nitrogen source. Different nitrogen concentrations were achieved by varying the urea content in the electrolyte. The structure, morphology, composition and optical band gap of the nanotube arrays were determined by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy (XPS) and diffuse reflectance spectroscopy, respectively. The substitution of O 2− ions by N 3− ions in the anion sublattice as well as the formulae of the doped samples was confirmed from the results of XPS. The optical band gap of the nanotube arrays was found to decrease with N-concentration. The sample with the highest concentration corresponding to the formula TiO 1.83 N 0.14 showed two regions in the Tauc's plot indicating the presence of interband states.
-
Solvothermally synthesized europium-doped CdS nanorods: applications as phosphors
International Nuclear Information System (INIS)
Kumar, Sunil; Jindal, Zinki; Kumari, Nitu; Verma, Narendra Kumar
2011-01-01
To exploit the photoluminescent behavior of CdS at nanoscale with different doping concentration of europium—a rare earth element, we report the synthesis of Eu-doped CdS nanorods by using low temperature solvothermal process by using ethylenediamine. The outcomes can have future applications as phosphors, photovoltaic cells, lasers, light emitting diodes, bio-imaging, and sensors. The doping was confirmed by electron dispersive spectroscopy supported by X-ray diffraction. From scanning electron microscopy and transmission electron microscopy analysis it was observed that the average diameter of the Cd 1−x Eu x S nanorods is about 10–12 nm having lengths in the range of 50–100 nm. UV–Visible spectroscopy study was carried out to determine the band gap of the nanorods and the absorbance peaks showed blue shift with respect to the bulk CdS. The blue shift was also observed as the doping concentration of Eu increases. From photoluminescence (PL) studies at λ ex = 450 nm, peaks at 528 and 540 nm were observed due to CdS, peak at 570 nm is due to defects related transitions, while the peak at 613 nm is due to Eu. As the doping concentration of Eu is increased the intensity of the luminescent peak at 613 nm is increased. Thermogravimetric analysis showed the nanorods are thermally stable up to 300 °C. The traces of impurities adsorbed on the nanorods were confirmed by Fourier transform infrared spectroscopy.
-
Spectroscopic XPEEM of highly conductive SI-doped GaN wires
Energy Technology Data Exchange (ETDEWEB)
Renault, O., E-mail: olivier.renault@cea.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Morin, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Tchoulfian, P. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Chevalier, N. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Feyer, V. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany); Pernot, J. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Inst. NEEL, F-38042 Grenoble (France); Institut Universitaire de France, F-75005 Paris (France); Schneider, C.M. [Peter Grünberg Institute (PGI-6) and JARA-FIT, Research Center Jülich, D-52425 Jülich (Germany)
2015-12-15
Using soft X-ray photoelectron emission microscopy (XPEEM), complemented by scanning Auger microscopy (SAM) and scanning capacitance microscopy, we have quantitatively studied the incorporation of silicon and band bending at the surface (m-facet) of an individual, highly conductive Si-doped GaN micro-wires (Tchoulfian et al., Applied Physics Letters 102 (12), 2013). Electrically active n-dopants Si atoms in Ga interstitial sites are detected as nitride bonding states in the high-resolution Si2p core level spectra, and represent only a small fraction (<10%) of the overall Si surface concentration measured by SAM. The derived carrier concentration of 2×10{sup 21} at cm{sup −3} is in reasonable agreement with electrical measurements. A consistent surface band bending of ~1 eV is directly evidenced by surface photo-voltage measurements. Such an approach combining different surface-sensitive microscopies is of interest for studying other heavily doped semiconducting wires. - Highlights: • XPEEM analysis of state-of-the-art, heavily doped GaN wires with insights on the issue of the origin of the increased conductivity. • Combined microscopic approach with Scanning Auger microscopy and X-ray Photoeletron Emission Microscopy, to quantity the electrically active Si-dopants in GaN. • The determined concentration is found in reasonable agreement with the one derived from bulk electrical measurements. • The proposed method is of interest for studying the electronics and chemistry of doping in other heavily doped semiconducting wires.
-
Physics of cryogenics an ultralow temperature phenomenon
Zohuri, Bahman
2018-01-01
Physics of Cryogenics: An Ultralow Temperature Phenomenon discusses the significant number of advances that have been made during the last few years in a variety of cryocoolers, such as Brayton, Joule-Thomson, Stirling, pulse tube, Gifford-McMahon and magnetic refrigerators. The book reviews various approaches taken to improve reliability, a major driving force for new research areas. The advantages and disadvantages of different cycles are compared, and the latest improvements in each of these cryocoolers is discussed. The book starts with the thermodynamic fundamentals, followed by the definition of cryogenic and the associated science behind low temperature phenomena and properties. This book is an ideal resource for scientists, engineers and graduate and senior undergraduate students who need a better understanding of the science of cryogenics and related thermodynamics.
-
Carbon doping induced giant low bias negative differential resistance in boron nitride nanoribbon
International Nuclear Information System (INIS)
Liu, N.; Liu, J.B.; Gao, G.Y.; Yao, K.L.
2014-01-01
By applying nonequilibrium Green's function combined with density functional theory, we investigated the electronic transport properties of carbon-doped armchair boron nitride nanoribbons. Obvious negative differential resistance (NDR) behavior with giant peak-to-valley ratio up to the order of 10 4 –10 6 is found by tuning the doping position and concentration. Especially, with the reduction of doping concentration, NDR peak position can enter into mV bias range and even can be expected lower than mV bias. The negative differential resistance behavior is explained by the evolution of the transmission spectra and band structures with applied bias. - Highlights: • Negative differential resistance (NDR) behavior with giant peak-to-valley ratio is found. • Doping concentration changes the NDR peak position significantly. • NDR peak position can enter into mV bias range and even lower than mV bias. • The results are explained by the bias-dependent transmission spectra and band structures
-
Bagastyo, Arseto Y; Batstone, Damien J; Kristiana, Ina; Escher, Beate I; Joll, Cynthia; Radjenovic, Jelena
2014-08-30
An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10AhL(-1), and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2mgL(-1)). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ=11mgL(-1) at 2.4AhL(-1)), which rapidly decreased to 4mgL(-1). The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25kWhgCOD(-1) and 0.34kWhgCOD(-1), respectively, yet it did not demonstrate any improvement regarding by-products formation. Copyright © 2014 Elsevier B.V. All rights reserved.
-
Chromatic dispersion effects in ultra-low coherence interferometry
Energy Technology Data Exchange (ETDEWEB)
Lychagov, V V; Ryabukho, V P [N.G.Chernyshevsky Saratov State University (Russian Federation)
2015-06-30
We consider the properties of an interference signal shift from zero-path-difference position in the presence of an uncompensated dispersive layer in one of the interferometer arms. It is experimentally shown that in using an ultra-low coherence light source, the formation of the interference signal is also determined by the group velocity dispersion, which results in a nonlinear dependence of the position of the interference signal on the geometrical thickness of the dispersive layer. The discrepancy in the dispersive layer and compensator refractive indices in the third decimal place is experimentally shown to lead to an interference signal shift that is an order of magnitude greater than the pulse width. (interferometry)
-
Wang, Weidong; Bai, Liwen; Yang, Chenguang; Fan, Kangqi; Xie, Yong; Li, Minglin
2018-01-31
Based on the density functional theory (DFT), the electronic properties of O-doped pure and sulfur vacancy-defect monolayer WS₂ are investigated by using the first-principles method. For the O-doped pure monolayer WS₂, four sizes (2 × 2 × 1, 3 × 3 × 1, 4 × 4 × 1 and 5 × 5 × 1) of supercell are discussed to probe the effects of O doping concentration on the electronic structure. For the 2 × 2 × 1 supercell with 12.5% O doping concentration, the band gap of O-doped pure WS₂ is reduced by 8.9% displaying an indirect band gap. The band gaps in 3 × 3 × 1 and 4 × 4 × 1 supercells are both opened to some extent, respectively, for 5.55% and 3.13% O doping concentrations, while the band gap in 5 × 5 × 1 supercell with 2.0% O doping concentration is quite close to that of the pure monolayer WS₂. Then, two typical point defects, including sulfur single-vacancy (V S ) and sulfur divacancy (V 2S ), are introduced to probe the influences of O doping on the electronic properties of WS₂ monolayers. The observations from DFT calculations show that O doping can broaden the band gap of monolayer WS₂ with V S defect to a certain degree, but weaken the band gap of monolayer WS₂ with V 2S defect. Doping O element into either pure or sulfur vacancy-defect monolayer WS₂ cannot change their band gaps significantly, however, it still can be regarded as a potential method to slightly tune the electronic properties of monolayer WS₂.
-
First-principles study on the effect of high In doping on the conductivity of ZnO
International Nuclear Information System (INIS)
Hou Qing-Yu; Li Ji-Jun; Ying Chun; Zhao Chun-Wang; Zhao Er-Jun; Zhang Yue
2013-01-01
Based on the density functional theory (DFT), using first-principles plane-wave ultrasoft pseudopotential method, the models of the unit cell of pure ZnO and two highly In-doped supercells of Zn 0.9375 In 0.0625 O and Zn 0.875 In 0.125 O are constructed, and the geometry optimizations of the three models are carried out. The total density of states (DOS) and the band structures (BS) are also calculated. The calculation results show that in the range of high doping concentration, when the doping concentration is hihger than a specific value, the conductivity decreases with the increase of the doping concentration of In in ZnO, which is in consistence with the change trend of the experimental results
-
Effects of pressure on doped Kondo insulators
International Nuclear Information System (INIS)
Lee, Chengchung; Xu, Wang
1999-08-01
The effects of pressure on the doped Kondo insulators (KI) are studied in the framework of the slave-boson mean-field theory under the coherent potential approximation (CPA). A unified picture for both electron-type KI and hole-type KI is presented. The density of states of the f-electrons under the applied pressures and its variation with the concentration of the Kondo holes are calculated self-consistently. The specific heat coefficient, the zero-temperature magnetic susceptibility as well as the low temperature electric resistivity of the doped KI under various pressures are obtained. The two contrasting pressure-dependent effects observed in the doped KI systems can be naturally explained within a microscopic model. (author)
-
Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well
International Nuclear Information System (INIS)
Ungan, F.
2011-01-01
In the present work, the changes in the intersubband optical absorption coefficients and the refractive index in a modulation-doped quantum well have been investigated theoretically. Within the envelope function approach and the effective mass approximation, the electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schroedinger-Poisson equations. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results GaAs/Al x Ga 1-x As are presented for typical modulation-doped quantum well system. The linear, third-order nonlinear and total absorption and refractive index changes depending on the doping concentration are investigated as a function of the incident optical intensity and structure parameters, such as quantum well width and stoichiometric ratio. The results show that the doping concentration, the structure parameters and the incident optical intensity have a great effect on the optical characteristics of these structures. - Highlights: → The doping concentration has a great effect on the optical characteristics of these structures. → The structure parameters have a great effect on the optical properties of these structures. → The total absorption coefficients reduced as the incident optical intensity increases. → The RICs reduced as the incident optical intensity increases.
-
Analytical recursive method to ascertain multisite entanglement in doped quantum spin ladders
Roy, Sudipto Singha; Dhar, Himadri Shekhar; Rakshit, Debraj; SenDe, Aditi; Sen, Ujjwal
2017-08-01
We formulate an analytical recursive method to generate the wave function of doped short-range resonating valence bond (RVB) states as a tool to efficiently estimate multisite entanglement as well as other physical quantities in doped quantum spin ladders. We prove that doped RVB ladder states are always genuine multipartite entangled. Importantly, our results show that within specific doping concentration and model parameter regimes, the doped RVB state essentially characterizes the trends of genuine multiparty entanglement in the exact ground states of the Hubbard model with large on-site interactions, in the limit that yields the t -J Hamiltonian.
-
Synthesis and photoluminescence properties of Sm3+-doped CaWO4 nanoparticles
International Nuclear Information System (INIS)
Xiao Qi; Zhou Qitao; Li Ming
2010-01-01
The Sm 3+ -doped CaWO 4 nanoparticles were synthesized by hydrothermal method. The room temperature photoluminescence (PL) spectra of Sm 3+ -doped CaWO 4 nanoparticles doped with different Sm 3+ concentrations under 405 nm excitation have been investigated. The PL spectra showed four strong emission peaks at 460, 571, 609, and 653 nm. The first emission peak at 460 nm could be due to a structural defect of the lattice, an oxygen-deficient WO 3 complex. The other three emissions at 571, 609, and 653 nm were due to the f-f forbidden transitions of the 4f electrons of Sm 3+ , corresponding to 4 G 5/2 → 6 H 5/2 (571 nm), 6 H 7/2 (609 nm), and 6 H 9/2 (653 nm), respectively. In addition, the optimum Sm 3+ concentration in CaWO 4 nanoparticles for optical emission was determined to be 1.0%. The Sm 3+4 G 5/2 → 6 H 7/2 (609 nm) emission intensity of Sm 3+ -doped CaWO 4 nanoparticles significantly increased with the increase of Sm 3+ concentration, and showed a maximum when Sm 3+ doping content was 1.0%. If Sm 3+ concentration continued to increase, namely more than 1.0%, the Sm 3+4 G 5/2 → 6 H 7/2 emission intensity would decrease. The present materials might be a promising phosphor for white-light LED applications.
-
Seventy kilovolt ultra-low dose CT of the paranasal sinus: first clinical results
International Nuclear Information System (INIS)
Bodelle, B.; Wichmann, J.L.; Klotz, N.; Lehnert, T.; Vogl, T.J.; Luboldt, W.; Schulz, B.
2015-01-01
Aim: To evaluate the diagnostic image quality and radiation dose of low-dose 70 kV computed tomography (CT) of the paranasal sinus in comparison to 100 and 120 kV CT. Materials and methods: CT of the paranasal sinus was performed in 127 patients divided into three groups using different tube voltages and currents (70 kV/75 mAs, ultra-low dose protocol, n = 44; 100 kV/40 mAs, standard low-dose protocol, n = 42; 120 kV/40 mAs, standard protocol, n = 41). CT dose index (CTDIvol), dose–length product (DLP), attenuation, image noise and signal-to-noise ratio (SNR) were compared between the groups using Wilcoxon–Mann–Whitney U-test. Subjective diagnostic image quality was compared by using a five-point scale (1 = non-diagnostic, 5 = excellent, read by two readers in consensus) and Cohen's weighted kappa analysis for interobserver agreement. Results: Radiation dose was significantly lower with 70 kV acquisition than 100 and 120 kV (DLP: 31 versus 52 versus 82 mGy·cm; CTDI 2.33 versus 3.95 versus 6.31 mGy, all p < 0.05). Mean SNR (70 kV: 0.37; 100 kV: 0.21; 120 kV: 0.13; p < 0.05) and organ attenuation increased significantly with lower voltages. All examinations showed diagnostic image quality. Subjective diagnostic image quality was higher with standard protocols than the 70 kV protocol (120 kV: 5.0; 100 kV: 4.5; 70 kV: 3.5, p < 0.05) without significant differences with substantial interobserver agreement (κ > 0.59). Conclusion: The ultra-low dose (70 kV) CT imaging of the paranasal sinus allowed for significant dose reduction by 61% and an increased attenuation of organ structures in comparison to standard acquisition while maintaining diagnostic image quality with a slight reduction in subjective image quality. -- Highlights: •Image quality and radiation dose of 70 kV ultra-low dose CT of the paranasal sinus. •70 kV ultra-low dose CT of the paranasal sinus allows for dose reduction by 61%. •70 kV CT of the
-
International Nuclear Information System (INIS)
Li Liuan; Li Hongdong; Lue Xianyi; Cheng Shaoheng; Wang Qiliang; Ren Shiyuan; Liu Junwei; Zou Guangtian
2010-01-01
In this paper, we investigate the reaction pressure-dependent growth and properties of boron-doped freestanding diamond films, synthesized by hot filament chemical vapor deposition (HFCVD) at different boron-doping levels. With the decrease in pressure, the growth feature of the films varies from mixed [1 1 1] and [1 1 0] to dominated [1 1 1] texture. The low reaction pressure, as well as high boron-doping level, results in the increase (decrease) of carrier concentration (resistivity). The high concentration of atomic hydrogen in the ambient and preferable [1 1 1] growth, due to the low reaction pressure, is available for the enhancement of boron doping. The estimated residual stress increases with increase in the introducing boron level.
-
Energy Technology Data Exchange (ETDEWEB)
Kang, H. Y. [Inha University, Incheon (Korea, Republic of); Lee, C. H. [Seoul National University, Seoul (Korea, Republic of)
2004-09-15
We have studied the electroluminescence (EL) properties of devices with a red fluorescent dye, 4-(dicyanomethylene)-2-t-butyl-6- (1,1,7,7-tetramethyl-julolidyl-9-enyl)--4H-py ran (DCJTB), doped into a mixed matrix of tris-(8-hydroxyquinoline)aluminum (Alq{sub 3}) and rubrene. The devices doped with DCJTB in the Alq{sub 3}:rubrene mixed host show an efficient red emission from DCJTB with negligible EL emission from both Alq{sub 3} and rubrene. The QE increases with increasing rubrene concentration and reaches a maximum of about 3.6 % for a DCJTB doping concentration of about 5 % in the Alq3:rubrene mixed (50:50 % ratio by weight) host, and then decreases at higher rubrene concentration, due to the concentration quenching effect. At a given bias voltage, the current density increases with increasing rubrene doping concentration, but it decreases with increasing DCJTB doping concentration. The results imply that the injected electrons and holes can transport via hopping through the energy levels of rubrene molecules while DCJTB acts as traps.
-
Cyan-white-red luminescence from europium doped Al2O3-La2O3-SiO2 glasses.
Yang, Hucheng; Lakshminarayana, G; Zhou, Shifeng; Teng, Yu; Qiu, Jianrong
2008-04-28
Aluminum-lanthanum-silicate glasses with different Eu doping concentration have been synthesized by conventional melt-quenching method at 1680 degrees C in reductive atmosphere. Under 395nm excitation, samples with low Eu doping concentration show mainly the cyan broad emission at 460nm due to 4f(6)5d(1)-4f(7) transition of Eu(2+); and the samples with higher Eu doping concentration show mainly some narrow emissions with maximum at 616nm due to (5)D(0)-(7)F(j) (J=0, 1, 2, 3, 4) transitions of Eu(3+). Cyan-white-red tunable luminescence under 395nm excitation has been obtained by changing the Eu doping concentration.
-
Halogen doping of II-VI semiconductors during molecular beam epitaxy
Energy Technology Data Exchange (ETDEWEB)
Waag, A.; Litz, Th.; Fischer, F.; Heinke, H.; Scholl, S.; Hommel, D.; Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))
1994-04-14
Results on the halogen doping of CdTe, (CdMn)Te as well as (CdMg)Te thin films and quantum well structures are reported. The structures were grown by molecular beam epitaxy. The samples have been investigated by Van der Pauw, photoconductivity, X-ray diffraction, XPS and SIMS measurements. ZnCl[sub 2] and ZnBr[sub 2] have been used as dopant sources. Free carrier concentrations at room temperature above 10[sup 18] cm[sup -3] can easily be achieved for CdTe for a wide range of Cd/Te flux ratios and substrate temperatures. In the ternary alloys, the free carrier concentration decreases drastically with increasing x-values, despite a constant incorporation of the dopant species. In addition, persistent photoconductivity has been observed in n-type doped ternary thin films at low temperatures. The decrease of the free carrier concentration with x-value is common to other wide-gap ternary alloys, and the reason for it is discussed in the frame of DX-like deep donor impurities in ternary II-VI compounds. In first experiments on planar halogen doping of CdTe, a doping level of 5x10[sup 18] cm[sup -3] could be reached in the doped regions, the highest value ever reported for CdTe. A clear influence of dopant incorporation on the structural quality of CdTe thin films has been seen even for dopant concentrations of as low as 10[sup 18] cm[sup -3]. The FWHM of the rocking curves decreased by a factor of 2 with increasing dopant incorporation. SIMS as well as XPS measurements demonstrate that the Cl/Zn and Br/Zn ratio in the doped films is 2/1, but no chemical shift corresponding to Zn-Cl or Zn-Br bonds could be detected. A model for the incorporation of the halogens is proposed on the basis of these results
-
First-principles study on silicon atom doped monolayer graphene
Rafique, Muhammad; Shuai, Yong; Hussain, Nayyar
2018-01-01
This paper illustrates the structural, electronic and optical properties of individual silicon (Si) atom-doped single layer graphene using density functional theory method. Si atom forms tight bonding with graphene layer. The effect of doping has been investigated by varying the concentration of Si atoms from 3.125% to 9.37% (i.e. From one to three Si atoms in 4 × 4 pure graphene supercell containing 32 carbon atoms), respectively. Electronic structure, partial density of states (PDOS) and optical properties of pure and Si atom-doped graphene sheet were calculated using VASP (Vienna ab-initio Simulation Package). The calculated results for pure graphene sheet were then compared with Si atom doped graphene. It is revealed that upon Si doping in graphene, a finite band gap appears at the high symmetric K-point, thereby making graphene a direct band gap semiconductor. Moreover, the band gap value is directly proportional to the concentration of impurity Si atoms present in graphene lattice. Upon analyzing the optical properties of Si atom-doped graphene structures, it is found that, there is significant change in the refractive index of the graphene after Si atom substitution in graphene. In addition, the overall absorption spectrum of graphene is decreased after Si atom doping. Although a significant red shift in absorption is found to occur towards visible range of radiation when Si atom is substituted in its lattice. The reflectivity of graphene improves in low energy region after Si atom substitution in graphene. These results can be useful for tuning the electronic structure and to manipulate the optical properties of graphene layer in the visible region.
-
Thermoelectric performance of co-doped SnTe with resonant levels
Energy Technology Data Exchange (ETDEWEB)
Zhou, Min; Han, Yemao; Li, Laifeng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com [Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Gibbs, Zachary M. [Division of Chemistry and Chemical Engineering, California Institute of Technology, 1200 E. California Blvd. Pasadena, California 91125 (United States); Wang, Heng, E-mail: laifengli@mail.ipc.ac.cn, E-mail: wangheng83@gmail.com [Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125 (United States); Snyder, G. Jeffrey [Materials Science, California Institute of Technology, 1200 California Blvd., Pasadena, California 91125 (United States); TMO University, Saint Petersburg 197101 (Russian Federation)
2016-07-25
Some group III elements such as Indium are known to produce the resonant impurity states in IV-VI compounds. The discovery of these impurity states has opened up new ways for engineering the thermoelectric properties of IV-VI compounds. In this work, resonant states in SnTe were studied by co-doping with both resonant (In) and extrinsic (Ag, I) dopants. A characteristic nonlinear relationship was observed between the Hall carrier concentration (n{sub H}) and extrinsic dopant concentration (N{sub I}, N{sub Ag}) in the stabilization region, where a linear increase of dopant concentration does not lead to linear response in the measured n{sub H}. Upon substituting extrinsic dopants beyond a certain amount, the n{sub H} changed proportionally with additional dopants (Ag, I) (the doping region). The Seebeck coefficients are enhanced as the resonant impurity is introduced, whereas the use of extrinsic doping only induces minor changes. Modest zT enhancements are observed at lower temperatures, which lead to an increase in the average zT values over a broad range of temperatures (300–773 K). The improved average zT obtained through co-doping indicates the promise of fine carrier density control in maximizing the favorable effect of resonant levels for thermoelectric materials.
-
Defect phase diagram for doping of Ga2O3
Directory of Open Access Journals (Sweden)
Stephan Lany
2018-04-01
Full Text Available For the case of n-type doping of β-Ga2O3 by group 14 dopants (C, Si, Ge, Sn, a defect phase diagram is constructed from defect equilibria calculated over a range of temperatures (T, O partial pressures (pO2, and dopant concentrations. The underlying defect levels and formation energies are determined from first-principles supercell calculations with GW bandgap corrections. Only Si is found to be a truly shallow donor, C is a deep DX-like (lattice relaxed donor center, and Ge and Sn have defect levels close to the conduction band minimum. The thermodynamic modeling includes the effect of association of dopant-defect pairs and complexes, which causes the net doping to decline when exceeding a certain optimal dopant concentration. The optimal doping levels are surprisingly low, between about 0.01% and 1% of cation substitution, depending on the (T, pO2 conditions. Considering further the stability constraints due to sublimation of molecular Ga2O, specific predictions of optimized pO2 and Si dopant concentrations are given. The incomplete passivation of dopant-defect complexes in β-Ga2O3 suggests a design rule for metastable doping above the solubility limit.
-
Electric fields in nonhomogeneously doped silicon. Summary of simulations
Energy Technology Data Exchange (ETDEWEB)
Kotov, I.V. [Ohio State University, Columbus, OH 43210 (United States)]. E-mail: kotov@mps.ohio-state.edu; Humanic, T.J. [Ohio State University, Columbus, OH 43210 (United States); Nouais, D. [INFN, Sezione di Torino, I-10125 Turin (Italy); Randel, J. [Ohio State University, Columbus, OH 43210 (United States); Rashevsky, A. [INFN, Sezione di Triste, I-34127 Trieste (Italy)
2006-11-30
Variations of the doping concentration inside a silicon device result in electric field distortions. These distortions, 'parasitic' fields, have been observed in Silicon Drift Detectors [D. Nouais, et al., Nucl. Instr. and Meth. A 501 (2003) 119; E. Crescio, et al., Nucl. Instr. and Meth. A 539 (2005) 250]. Electric fields inside a silicon device can be calculated for a given doping profile. In this study, the ATLAS device simulator. [Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA
-
Performance of Cr-doped ZnO for acetone sensing
Energy Technology Data Exchange (ETDEWEB)
Al-Hardan, N.H., E-mail: naif_imen@ukm.my [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Abdullah, M.J.; Aziz, A. Abdul [School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)
2013-04-01
Zinc oxide (ZnO) doped with chromium (Cr) was synthesized by reactive co-sputtering for gas sensing applications. The effect of varying the contents of Cr (from 1 to 4 at%) on the ZnO gas sensor response was studied. X-ray diffraction analysis reveals the high orientation of c-axis of the prepared films. The optimum operating temperature of the undoped ZnO was 400 °C and shifted to 300 °C for the Cr-doped ZnO under the acetone vapour. The 1% Cr doping ZnO gas sensor was most sensitive for the acetone vapour. The ability of the 1% Cr-doped ZnO to produce repeatable results under different acetone vapour concentrations was tested. The timing properties of the doped Cr ZnO gas sensor were 70 and 95 s for the rise and recovery time respectively.
-
Elementary steps in electrical doping of organic semiconductors
Tietze, Max Lutz
2018-03-15
Fermi level control by doping is established since decades in inorganic semiconductors and has been successfully introduced in organic semiconductors. Despite its commercial success in the multi-billion OLED display business, molecular doping is little understood, with its elementary steps controversially discussed and mostly-empirical-materials design. Particularly puzzling is the efficient carrier release, despite a presumably large Coulomb barrier. Here we quantitatively investigate doping as a two-step process, involving single-electron transfer from donor to acceptor molecules and subsequent dissociation of the ground-state integer-charge transfer complex (ICTC). We show that carrier release by ICTC dissociation has an activation energy of only a few tens of meV, despite a Coulomb binding of several 100 meV. We resolve this discrepancy by taking energetic disorder into account. The overall doping process is explained by an extended semiconductor model in which occupation of ICTCs causes the classically known reserve regime at device-relevant doping concentrations.
-
Rare earth oxide doping in oxide cathodes
International Nuclear Information System (INIS)
Engelsen, Daniel den; Gaertner, Georg
2006-01-01
The effect on life performance and poisoning with O 2 by doping oxide cathodes with rare earth oxides and pseudo rare earth oxides, notably yttria, is qualitatively explained in terms of electrolysis of BaO during emission of electrons. Doped cathodes show less electrolysis and consume therefore less Ba during life: consequently, doped cathodes have a better life performance. However, the lower Ba-production makes doped cathodes more sensitive to oxygen poisoning. The experimentally found relation between conductivity and yttria concentration was the motive to propose a new model for the crystal imperfections in BaO. In this new imperfection model most Y 3+ -ions will combine with barium vacancies, therefore, the increase of the conductivity is modest and also the effect on the position of the Fermi level is modest. By assuming a combination of bulk and surface conductivity, the agreement between experiment and theory can be improved further
-
The molecular ordering phenomenon in dye-doped nematic liquid crystals
International Nuclear Information System (INIS)
Prakash Yadav, Satya; Pandey, Kamal Kumar; Kumar Misra, Abhishek; Kumar Tripathi, Pankaj; Manohar, Rajiv
2011-01-01
The experimental results of this work point out the role of the guest dye molecules in the molecular ordering of nematic liquid crystals. We have discussed the changes in the energies of interactions between rod-like nematic molecules and anthraquinone dye by considering the presence of steric and dipole-dipole interactions in the dye-doped system. The concentration of the dye plays an important role in the determination of molecular ordering in such dye-doped systems. Below a certain concentration of dye (known as the critical concentration), where the interaction between the dye molecules can be neglected, the addition of dye molecules introduces some disorder into the system in the form of domain formation. Above this critical concentration, this disorder is small.
-
The molecular ordering phenomenon in dye-doped nematic liquid crystals
Energy Technology Data Exchange (ETDEWEB)
Prakash Yadav, Satya; Pandey, Kamal Kumar; Kumar Misra, Abhishek; Kumar Tripathi, Pankaj; Manohar, Rajiv, E-mail: rajiv.manohar@gmail.com [Liquid Crystal Research Laboratory, Physics Department, University of Lucknow, Lucknow-226007 (India)
2011-03-15
The experimental results of this work point out the role of the guest dye molecules in the molecular ordering of nematic liquid crystals. We have discussed the changes in the energies of interactions between rod-like nematic molecules and anthraquinone dye by considering the presence of steric and dipole-dipole interactions in the dye-doped system. The concentration of the dye plays an important role in the determination of molecular ordering in such dye-doped systems. Below a certain concentration of dye (known as the critical concentration), where the interaction between the dye molecules can be neglected, the addition of dye molecules introduces some disorder into the system in the form of domain formation. Above this critical concentration, this disorder is small.
-
Soft X-ray-assisted detection method for airborne molecular contaminations (AMCs)
Energy Technology Data Exchange (ETDEWEB)
Kim, Changhyuk; Zuo, Zhili [University of Minnesota, Department of Mechanical Engineering (United States); Finger, Hartmut; Haep, Stefan; Asbach, Christof; Fissan, Heinz [Institute of Energy and Environmental Technology (IUTA e. V.) (Germany); Pui, David Y. H., E-mail: dyhpui@umn.edu [University of Minnesota, Department of Mechanical Engineering (United States)
2015-03-15
Airborne molecular contaminations (AMCs) represent a wide range of gaseous contaminants in cleanrooms. Due to the unintentional nanoparticle or haze formation as well as doping caused by AMCs, improved monitoring and controlling methods for AMCs are urgent in the semiconductor industry. However, measuring ultra-low concentrations of AMCs in cleanrooms is difficult, especially, behind a gas filter. In this study, a novel detection method for AMCs, which is on-line, economical, and applicable for diverse AMCs, was developed by employing gas-to-particle conversion with soft X-ray, and then measuring the generated nanoparticles. Feasibility study of this method was conducted through the evaluations of granular-activated carbons (GACs), which are widely used AMC filter media. Sulfur dioxide (SO{sub 2}) was used as an AMC for the feasibility study. Using this method, the ultra-low concentrations of SO{sub 2} behind GACs were determined in terms of concentrations of generated sulfuric acid (H{sub 2}SO{sub 4}) nanoparticles. By calculating SO{sub 2} concentrations from the nanoparticle concentrations using empirical correlation equations between them, remarkable sensitivity of this method to SO{sub 2} was shown, down to parts-per-trillions, which are too low to detect using commercial gas sensors. Also, the calculated SO{sub 2} concentrations showed good agreement with those measured simultaneously by a commercial SO{sub 2} monitor at parts-per-billions.
-
Energy Technology Data Exchange (ETDEWEB)
Hoyer, Karoline L.; Hubmann, Andreas H.; Klein, Andreas [Surface Science Division, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)
2017-02-15
Ge-doped In{sub 2}O{sub 3} thin films prepared by magnetron sputtering are studied using photoelectron spectroscopy and Hall effect measurements. Carrier conductivities of up to 8.35 x 10{sup 3} S cm{sup -1} and carrier mobilities of up to 57 cm{sup 2} V{sup -1}s{sup -1} are observed. The surface Ge concentration is enhanced by a factor of 2-3 compared to the concentration in the interior of the films. The surface Ge concentration increases with more oxidizing deposition conditions, in opposite to what has been reported for Sn-doped In{sub 2}O{sub 3}. Ge-doped In{sub 2}O{sub 3} films exhibit higher work functions as compared to Sn-doped films, in particular at oxidizing conditions. This is attributed to the formation of a GeO{sub 2} surface phase. While segregation of Sn reduces the carrier mobility due to grain boundary scattering, Ge segregation does not show such an effect. The differences are attributed to the different oxidation states of the segregated dopants, in agreement with the observed dependence of segregation on oxygen activity. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)
-
Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage
Wang, Zeheng; Chen, Wanjun; Wang, Fangzhou; Cao, Jun; Sun, Ruize; Ren, Kailin; Luo, Yi; Guo, Songnan; Wang, Zirui; Jin, Xiaosheng; Yang, Lei; Zhang, Bo
2018-05-01
An ultra-low turn-on voltage (VT) Γ-shaped anode AlGaN/GaN Schottky barrier diode (GA-SBD) is proposed via modeling and simulation for the first time, in which a Γ-shaped anode consists of a metal-2DEG junction together with a metal-AlGaN junction beside a shallowly recessed MIS field plate (MFP). An analytic forward current-voltage model matching the simulation results well is presented where an ultra-low VT of 0.08 V is obtained. The turn-on and blocking mechanisms are investigated to reveal the GA-SBD's great potential for applications of highly efficient power ICs.
-
p-type doping by platinum diffusion in low phosphorus doped silicon
Ventura, L.; Pichaud, B.; Vervisch, W.; Lanois, F.
2003-07-01
In this work we show that the cooling rate following a platinum diffusion strongly influences the electrical conductivity in weakly phosphorus doped silicon. Diffusions were performed at the temperature of 910 °C in the range of 8 32 hours in 0.6, 30, and 60 Ωrm cm phosphorus doped silicon samples. Spreading resistance profile analyses clearly show an n-type to p-type conversion under the surface when samples are cooled slowly. On the other hand, a compensation of the phosphorus donors can only be observed when samples are quenched. One Pt related acceptor deep level at 0.43 eV from the valence band is assumed to be at the origin of the type conversion mechanism. Its concentration increases by lowering the applied cooling rate. A complex formation with fast species such as interstitial Pt atoms or intrinsic point defects is expected. In 0.6 Ωrm cm phosphorus doped silicon, no acceptor deep level in the lower band gap is detected by DLTS measurement. This removes the opportunity of a pairing between phosphorus and platinum and suggests the possibility of a Fermi level controlled complex formation.
-
Scintillation and radiation damage of doped BaF2 crystals
International Nuclear Information System (INIS)
Gong Zufang; Xu Zizong; Chang Jin
1992-01-01
The emission spectra and the radiation damage of BaF 2 crystals doped Ce and Dy have been studied. The results indicate that the doped BaF 2 crystals have the intrinsic spectra of impurity besides the intrinsic spectra of BaF 2 crystals. The crystals colored and the transmissions decrease with the concentration of impurity in BaF 2 crystals after radiation by γ-ray of 60 Co. The doped Ce BaF 2 irradiated by ultraviolet has faster recover of transmissions but for doped Dy the effect is not obvious. The radiation resistance is not good as pure BaF 2 crystals
-
Local structure of vanadium in doped LiFePO4
International Nuclear Information System (INIS)
Zhao, Ting; Xu, Wei; Ye, Qing; Cheng, Jie; Zhao, Haifeng; Chu, Wangsheng; Wu, Ziyu; Univ. of Science and Technology of China, Hefei; Xia, Dingguo
2010-01-01
LiFePO 4 composites with 5 at.% vanadium doping are prepared by solid state reactions. X-ray absorption fine-structure spectroscopy is used as a novel technique to identify vanadium sites. Both experimental analyses and theoretical simulations show that vanadium does not enter into the LiFePO 4 crystal lattice. When the vanadium concentration is lower then 1 at.%, the dopant remains insoluble. Thus, a single-phase vanadium-doped LiFePO4 cannot be formed and the improved electrochemical properties of vanadium doped LiFePO 4 previously reported cannot be associated with crystal structure changes of the LiFePO 4 via vanadium doping. (orig.)
-
The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet
International Nuclear Information System (INIS)
Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu
2013-01-01
Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions
-
Han, Yuzhi; Tang, Di; Yang, Yanmei; Li, Chuanxi; Kong, Weiqian; Huang, Hui; Liu, Yang; Kang, Zhenhui
2015-03-01
A combustion flame method is developed for the convenient and scalable fabrication of single- and dual-doped carbon quantum dots (CQDs) (N-CQDs, B-CQDs, P-CQDs, and S-CQDs and dual-doped B,N-CQDs, P,N-CQDs, and S,N-CQDs), and the doping contents can be easily adjusted by simply changing the concentrations of precursors in ethanol. These single/dual-doped CQDs, especially B,N-CQDs, show high catalytic activities for the oxygen reduction reaction.A combustion flame method is developed for the convenient and scalable fabrication of single- and dual-doped carbon quantum dots (CQDs) (N-CQDs, B-CQDs, P-CQDs, and S-CQDs and dual-doped B,N-CQDs, P,N-CQDs, and S,N-CQDs), and the doping contents can be easily adjusted by simply changing the concentrations of precursors in ethanol. These single/dual-doped CQDs, especially B,N-CQDs, show high catalytic activities for the oxygen reduction reaction. Electronic supplementary information (ESI) available: TEM images, UV-Vis absorption, PL, Raman, FTIR, XPS, CV, and LSV data of single/dual doped CQDs, a table for the calculated mass concentrations of different atoms in various B, N, P or S containing CQDs and a table for summary of the ORR performance of various catalysts in an O2-saturated 0.1 M KOH solution. See DOI: 10.1039/c4nr07116f
-
The PS 200 catching trap: A new tool for ultra-low energy antiproton physics
International Nuclear Information System (INIS)
Holzscheiter, M.H.; Dyer, P.L.; King, N.S.P.; Lizon, D.C.; Morgan, G.L.; Schauer, M.M.; Schecker, J.A.; Hoibraten, S.; Lewis, R.A.; Otto, T.
1994-01-01
Approximately one million antiprotons have been trapped and electron cooled in the PS200 catching trap from a single fast extracted pulse from LEAR. The system is described in detail, different extraction schemes are discussed, and possible applications of this instrument to ultra-low energy atomic and nuclear physics with antiprotons are mentioned
-
International Nuclear Information System (INIS)
Lotey, Gurmeet Singh; Verma, N. K.
2012-01-01
Pure and Gd-doped BiFeO 3 nanoparticles have been synthesized by sol–gel method. The significant effects of size and Gd-doping on structural, electrical, and magnetic properties have been investigated. X-ray diffraction study reveals that the pure BiFeO 3 nanoparticles possess rhombohedral structure, but with 10% Gd-doping complete structural transformation from rhombohedral to orthorhombic has been observed. The particle size of pure and Gd-doped BiFeO 3 nanoparticles, calculated using Transmission electron microscopy, has been found to be in the range 25–15 nm. Pure and Gd-doped BiFeO 3 nanoparticles show ferromagnetic character, and the magnetization increases with decrease in particle size and increase in doping concentration. Scanning electron microscopy study reveals that grain size decreases with increase in Gd concentration. Well-saturated polarization versus electric field loop is observed for the doped samples. Leakage current density decreases by four orders by doping Gd in BiFeO 3 . The incorporation of Gd in BiFeO 3 enhances spin as well as electric polarization at room temperature. The possible origin of enhancement in these properties has been explained on the basis of dopant and its concentration, phase purity, small particle, and grain size.
-
Optoelectronic properties of sprayed transparent and conducting indium doped zinc oxide thin films
International Nuclear Information System (INIS)
Shinde, S S; Shinde, P S; Bhosale, C H; Rajpure, K Y
2008-01-01
Indium doped zinc oxide (IZO) thin films are grown onto Corning glass substrates using the spray pyrolysis technique. The effect of doping concentration on the structural, electrical and optical properties of IZO thin films is studied. X-ray diffraction studies show a change in preferential orientation from the (0 0 2) to the (1 0 1) crystal planes with increase in indium doping concentration. Scanning electron microscopy studies show polycrystalline morphology of the films. Based on the Hall-effect measurements and analysis, impurity scattering is found to be the dominant mechanism determining the diminished mobility in ZnO thin films having higher indium concentration. The addition of indium also induces a drastic decrease in the electrical resistivity of films; the lowest resistivity (4.03 x 10 -5 Ω cm) being observed for the film deposited with 3 at% indium doping. The effect of annealing on the film properties has been reported. Films deposited with 3 at% In concentration have relatively low resistivity with 90% transmittance at 550 nm and the highest value of figure of merit 7.9 x 10 -2 □ Ω -1
-
Shen, J.; Chen, B.; Umeda, J.; Kondoh, K.
2018-03-01
Titanium and its alloys are recognized for their attractive properties. However, high-performance Ti alloys are often alloyed with rare or noble-metal elements. In the present study, Ti alloys doped with only ubiquitous elements were produced via powder metallurgy. The experimental results showed that pure Ti with 1.5 wt.% AlN incorporated exhibited excellent tensile properties, superior to similarly extruded Ti-6Al-4V. Further analysis revealed that its remarkably advanced strength could primarily be attributed to nitrogen solid-solution strengthening, accounting for nearly 80% of the strength increase of the material. In addition, despite the ultrahigh nitrogen concentration up to 0.809 wt.%, the Ti-1.5AlN sample showed elongation to failure of 10%. This result exceeds the well-known limitation for nitrogen (over 0.45 wt.%) that causes embrittlement of Ti alloys.
-
The atomic and electronic structure of nitrogen- and boron-doped phosphorene.
Boukhvalov, Danil W
2015-10-28
First principles modeling of nitrogen- and boron-doped phosphorene demonstrates the tendency toward the formation of highly ordered structures. Nitrogen doping leads to the formation of -N-P-P-P-N- lines. Further transformation into -P-N-P-N- lines across the chains of phosphorene occurs with increasing band gap and increasing nitrogen concentration, which coincides with the decreasing chemical activity of N-doped phosphorene. In contrast to the case of nitrogen, boron atoms prefer to form -B-B- pairs with the further formation of -P-P-B-B-P-P- patterns along the phosphorene chains. The low concentration of boron dopants converts the phosphorene from a semiconductor into a semimetal with the simultaneous enhancement of its chemical activity. Co-doping of phosphorene by both boron and nitrogen starts from the formation of -B-N- pairs, which provides flat bands and further transformation of these pairs into hexagonal BN lines and ribbons across the phosphorene chains.
-
Improvement in mechanical properties of high concentration particle doped thermoset composites
International Nuclear Information System (INIS)
Ahmed, N.
2009-01-01
The paper relates to high concentration particle doped composites based on thermosetting polymer systems in which the sequential addition of particles of certain size distribution is followed by curing and casting of the slurry to form a thermoset composite. Conventionally, at a threshold of beyond 90% of particles by weight of the polymer using triglyceride, the mechanical properties of the composite exhibit a sharp decline. The present research mitigates this behavior by incorporating a unique combination of cross-linking agents in the base polymer to impart exceptional mechanical properties to the composite. More specifically, the base polymer consists of butadiene, with triglyceride as cross-linking agent together with hydroxy-alkane as the chain extension precursors, when tune to the appropriate level of hard segment ratio in the polymer. An added advantage according to the present work resides in the analytical nature of butadiene pre-polymer as opposed to natural product; traditional composites based on natural sources are hampered by their inconsistent chemical composition and poor shelf life in the fabricated composite. The thermoset composite according the present research exhibits superior tensile strength (200-300 psi) properties using particle loading as high as 92% by weight of the fabricated composite as measured on a Tinius Olsen machine. Dynamic Mechanical Testing reveals interesting combination of storage and loss moduli in the fabricated specimens as a function of optimizing the thermal response of the viscoelastic composite to imposed vibration loading. (author)
-
Exploration of Al-Doped ZnO in Photovoltaic Thin Films
Ciccarino, Christopher; Sahiner, M. Alper
The electrical properties of Al doped ZnO-based thin films represent a potential advancement in the push for increasing solar cell efficiency. Doping with Aluminum will theoretically decrease resistivity of the film and therefore achieve this potential as a viable option in the P-N junction phase of photovoltaic cells. The n-type semi-conductive characteristics of the ZnO layer will theoretically be optimized with the addition of Aluminum carriers. In this study, Aluminum doping concentrations ranging from 1-3% by mass were produced, analyzed, and compared. Films were developed onto ITO coated glass using the Pulsed Laser Deposition technique. Target thickness was 250 nm and ellipsometry measurements showed uniformity and accuracy in this regard. Active dopant concentrations were determined using Hall Effect measurements. Efficiency measurements showed possible applications of this doped compound, with upwards of 7% efficiency measured, using a Keithley 2602 SourceMeter set-up. XRD scans showed highly crystalline structures, with effective Al intertwining of the hexagonal wurtzile ZnO molecular structure. This alone indicates a promising future of collaboration between these two materials.
-
Ex situ n+ doping of GeSn alloys via non-equilibrium processing
Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.
2018-06-01
Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.
-
Room temperature ferromagnetism in Mn-doped NiO nanoparticles
Energy Technology Data Exchange (ETDEWEB)
Layek, Samar, E-mail: samarlayek@gmail.com; Verma, H.C.
2016-01-01
Mn-doped NiO nanoparticles of the series Ni{sub 1−x}Mn{sub x}O (x=0.00, 0.02, 0.04 and 0.06) are successfully synthesized using a low temperature hydrothermal method. Samples up to 6% Mn-doping are single phase in nature as observed from powder x-ray diffraction (XRD) studies. Rietveld refinement of the XRD data shows that all the single phase samples crystallize in the NaCl like fcc structure with space group Fm-3m. Unit cell volume decreases with increasing Mn-doping. Pure NiO nanoparticles show weak ferromagnetism, may be due to nanosize nature. Introduction of Mn within NiO lattice improves the magnetic properties significantly. Room temperature ferromagnetism is found in all the doped samples whereas the magnetization is highest for 2% Mn-doping and then decreases with further doping. The ZFC and FC branches in the temperature dependent magnetization separate well above 350 K indicating transition temperature well above room temperature for 2% Mn-doped NiO Nanoparticle. The ferromagnetic Curie temperature is found to be 653 K for the same sample as measured by temperature dependent magnetization study using vibrating sample magnetometer (VSM) in high vacuum. - Highlights: • Mn-doped NiO nanoparticles are prepared by a simple hydrothermal method. • Unit cell volume decreases with increasing doping concentration. • Mn-doping leads to room temperature ferromagnetism in NiO nanoparticles. • Magnetization is highest for 2% Mn-doping. • Above 2%, magnetization decreases with increasing doping.
-
Room temperature ferromagnetism in Mn-doped NiO nanoparticles
International Nuclear Information System (INIS)
Layek, Samar; Verma, H.C.
2016-01-01
Mn-doped NiO nanoparticles of the series Ni_1_−_xMn_xO (x=0.00, 0.02, 0.04 and 0.06) are successfully synthesized using a low temperature hydrothermal method. Samples up to 6% Mn-doping are single phase in nature as observed from powder x-ray diffraction (XRD) studies. Rietveld refinement of the XRD data shows that all the single phase samples crystallize in the NaCl like fcc structure with space group Fm-3m. Unit cell volume decreases with increasing Mn-doping. Pure NiO nanoparticles show weak ferromagnetism, may be due to nanosize nature. Introduction of Mn within NiO lattice improves the magnetic properties significantly. Room temperature ferromagnetism is found in all the doped samples whereas the magnetization is highest for 2% Mn-doping and then decreases with further doping. The ZFC and FC branches in the temperature dependent magnetization separate well above 350 K indicating transition temperature well above room temperature for 2% Mn-doped NiO Nanoparticle. The ferromagnetic Curie temperature is found to be 653 K for the same sample as measured by temperature dependent magnetization study using vibrating sample magnetometer (VSM) in high vacuum. - Highlights: • Mn-doped NiO nanoparticles are prepared by a simple hydrothermal method. • Unit cell volume decreases with increasing doping concentration. • Mn-doping leads to room temperature ferromagnetism in NiO nanoparticles. • Magnetization is highest for 2% Mn-doping. • Above 2%, magnetization decreases with increasing doping.
-
Ptitsyna, N G; Kudrin, V A; Villorezi, D; Kopytenko, Iu A; Tiasto, M I; Kopytenko, E A; Bochko, V A; Iuchchi, N
1996-01-01
The study was inspired by earlier results that displayed influence of variable natural geomagnetic field (0.005-10 Hz range-ultra-low frequencies) on circulatory system, indicated possible correlation between industrial ultra-low frequency fields and prevalence of myocardial infarction. The authors conducted unique measurements of ultra-low frequency fields produced by electric engines. The results were compared with data on morbidity among railway transport workers. The findings are that level of magnetic variations in electric locomotive cabin can exceed 280 micro Tesla, whereas that in car sections reaches 50 micro Tesla. Occurrence of coronary heart disease among the locomotive operators appeared to be 2.0 + 0.2 times higher than that among the car section operators. Higher risk of coronary heart disease in the locomotive operators is associated with their increased occupational magnetic load.
-
Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor
Directory of Open Access Journals (Sweden)
A. V. PATIL
2010-12-01
Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.
-
International Nuclear Information System (INIS)
Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.
2009-01-01
Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.
-
Synthesis and characterization of hydroxyapatite-doped silver nanoparticles
International Nuclear Information System (INIS)
Andrade, Flavio Augusto Cavadas da Silva; Rollo, Joao Manuel Domingos de Almeida; Rigo, Eliana Cristina da Silva; Vercik, Andres; Vercik, Luci Cristina de Oliveira; Valencia, German Ayala; Ferreira, Leticcia Gaviao
2012-01-01
Hydroxyapatite-doped silver nanoparticles was obtained by immersing the powder in increasing dilutions of a solution containing AGNPS which were synthesized in different times and were characterized by UV-vis spectroscopy. The X-ray diffraction (XRD)studies demonstrate no change in the major phase of HA. Scanning Electron Microscopy (SEM) revealed morphological characteristics of powders after doping and the presence of silver was confirmed by energy dispersive X-ray (EDAX) analysis.The antibacterial effect of the doped powders was evaluated using strain of Staphylococcus aureus by disc-diffusion test. The zone of inhibition was found to vary with the amount of silver nanoparticle in the doped powder even for low concentrations of AgNPs. These results indicate that the method of immersion hydroxyapatite in solutions containing AgNPs is promising to obtain bioactive materials with low cytotoxicity and antibacterial effects. (author)
-
Characterization of a gamma radiation dosimeter based of glass doped with copper
International Nuclear Information System (INIS)
Laameri, Mohamed Hadi; Ben Mansour, Issam
2010-01-01
Commercial sodo-calcic silicate glass was studied by thermo luminescence in order to evaluate its potential like material sensitive to the gamma radiation for dosimetric application. We have examined in particular the effect of doping glass copper ion exchange C U-N A for different concentrations technique and multiple conditions of doping on luminescent thermo sensitivity on a very wide range of doses ranging from 10 mGy up to 100 kGy. We have also tried to explain the origin of thermoluminescence observed by exploiting the doped and non-doped samples EPR spectra.
-
I. Construction of an ultralow temperature laboratory. II. Thermal relaxation in superfluid helium-3
International Nuclear Information System (INIS)
Neuhauser, B.J.
1986-01-01
The first part of this thesis describes the construction of an ultralow temperature laboratory capable of reaching temperatures below 0.002 K. Continuous refrigeration to 0.012 K is provided by a cold plate/dilution refrigerator system. Single-cycle cooling to 0.002 K is accomplished by adiabatic demagnetization of cerous magnesium nitrate (CMN), a paramagnetic salt. Thermometry is done by measuring the resistance of carbon and germanium sensors, the magnetic susceptibility of lanthanum-diluted CMN, and the anisotropy of gamma radiation from a cobalt-60 nuclear orientation thermometer. Systems have been developed to allow precise control of the temperature and pressure of the liquid helium-3 sample. Measurements of thermal relaxation of liquid helium-3 in the ultralow temperature cell following sudden magnetic cooling of the CMN refrigerant are described. Analysis of the transient response of a thermal model of the cell indicates that the ratio of the time constants immediately below and above the superfluid-to-normal transition temperature provides a close estimate of the ratio of the corresponding helium-3 heat capacities, at least in the superfluid A-phase
-
Gupta, Ankur; Rawal, Takat B.; Neal, Craig J.; Das, Soumen; Rahman, Talat S.; Seal, Sudipta
2017-06-01
Two-dimensional (2D) molybdenum disulfide (MoS2) offers attractive properties due to its band gap modulation and has led to significant research-oriented applications (i.e. DNA and protein detection, cell imaging (fluorescent label) etc.). In biology, detection of free radicals (i.e. reactive oxygen species and reactive nitrogen (NO*) species are very important for early discovery and treatment of diseases. Herein, for the first time, we demonstrate the ultra-low (pico-molar) detection of pharmaceutically relevant free radicals using MoS2 for electrochemical sensing. We present pico- to nano- molar level sensitivity in smaller MoS2 with S-deficiency as revealed by x-ray photoelectron spectroscopy. Furthermore, the detection mechanism and size-dependent sensitivity have been investigated by density functional theory (DFT) showing the change in electronic density of states of Mo atoms at edges which lead to the preferred adsorption of H2O2 on Mo edges. The DFT analysis signifies the role of size and S-deficiency in the higher catalytic activity of smaller MoS2 particles and, thus, ultra-low detection.
-
Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives
Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato
2017-02-01
Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic
-
Cuppo, F L S; Gómez, S L; Figueiredo Neto, A M
2004-04-01
In this paper is reported a systematic experimental study of the linear-optical-absorption coefficient of ferrofluid-doped isotropic lyotropic mixtures as a function of the magnetic-grains concentration. The linear optical absorption of ferrolyomesophases increases in a nonlinear manner with the concentration of magnetic grains, deviating from the usual Beer-Lambert law. This behavior is associated to the presence of correlated micelles in the mixture which favors the formation of small-scale aggregates of magnetic grains (dimers), which have a higher absorption coefficient with respect to that of isolated grains. We propose that the indirect heating of the micelles via the ferrofluid grains (hyperthermia) could account for this nonlinear increase of the linear-optical-absorption coefficient as a function of the grains concentration.
-
Electronic transport in heavily doped Ag/n-Si composite films
Directory of Open Access Journals (Sweden)
Clayton W. Bates Jr.
2013-10-01
Full Text Available Hall measurements characterized Ag/n-Si composite films 1 micron thick produced by magnetron co-sputtering onto high resistivity Si (111 substrates at 550°C. The targets were Ag and n-type Si doped with 3 × 1019/cm3 of antimony. Films were prepared with 13, 16 and 22 at. % Ag and measured over a temperature range 77–500°K. Conduction takes place at low temperatures by variable rang hopping in localized states at the Fermi level and by thermal activation over grain boundaries at higher temperatures. The Log Resistivity vs 1/kT curves for the three Ag concentrations vary in a similar manner, but decrease in magnitude with increasing Ag due to the smaller number of grain boundaries between Ag nanoparticles occurring with increasing Ag concentration. At low temperatures Hall mobilities are essentially independent of temperature as the carrier densities for the three Ag concentrations are constant from 77 to slightly under 300°K with resistivities varying by small amounts. The mobilities at all Ag concentrations increase with temperature and approach each other as the effects of grain boundaries become less important. This work presents for the first time the effects of metal particles embedded in a semiconductor on the transport properties of carriers in the semiconductor. Though these effects are for a given average particle size most of the results are expected to hold over a range of particle sizes. Free electrons produced in films containing 13 and 16 at. % Ag result in concentrations of 1.5 × 1019/cm3, one half the antimony doping, while those with 22 at. % Ag, the carrier concentrations are three orders of magnitude higher. These constant carrier concentrations are due to the metal-insulator transition that occurs in doped crystalline and polycrystalline silicon for carrier densities nc >3.9 × 1018/cm3. The three orders of magnitude higher carrier concentration produced in films with 22 at. % Ag is argued to be due to doping of the Si
-
Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang
2013-01-23
Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.
-
Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure.
Zhang, Qiang; Xin, Tianyuan; Lu, Xiaoke; Wang, Yuexia
2018-03-16
We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.
-
Optoelectronic Properties of X-Doped (X = O, S, Te Photovoltaic CSe with Puckered Structure
Directory of Open Access Journals (Sweden)
Qiang Zhang
2018-03-01
Full Text Available We exploited novel two-dimensional (2D carbon selenide (CSe with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te, i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.
-
Energy Technology Data Exchange (ETDEWEB)
Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo [Tokyo Univ. (Japan). Inst. of Industrial Science
1995-02-01
Structural characteristics and electrooptical properties of Sn-doped In{sub 2}O{sub 3} (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO{sub 2} wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author).
-
International Nuclear Information System (INIS)
Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo
1995-01-01
Structural characteristics and electrooptical properties of Sn-doped In 2 O 3 (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO 2 wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author)
-
Energy Technology Data Exchange (ETDEWEB)
McCarty, Jon; Berry, Brian; Lundberg, Kare; Anson, Orris
2003-03-31
This final report describes a 2000-2003 program for the development of components and processes to enhance the commercialization of ultra-low emissions catalytic combustion in industrial gas turbines. The range of project tasks includes: development of more durable, lower-cost catalysts and catalytic combustor components; development and design of a catalytic pre-burner and a catalytic pilot burner for gas turbines, and on-site fuel conversion processing for utilization of liquid fuel.
-
Origin of electrophosphorescence from a doped polymer light emitting diode
International Nuclear Information System (INIS)
Lane, P. A.; Palilis, L. C.; O'Brien, D. F.; Giebeler, C.; Cadby, A. J.; Lidzey, D. G.; Campbell, A. J.; Blau, W.; Bradley, D. D. C.
2001-01-01
The origin of electrophosphorescence from a doped polymer light emitting diode (LED) has been investigated. A luminescent polymer host, poly(9,9-dioctylfluorene) (PFO), was doped with a red phosphorescent dye, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (PtOEP). The maximum external quantum efficiency of 3.5% was obtained at a concentration of 4% PtOEP by weight. Energy transfer mechanisms between PFO and PtOEP were studied by absorption, photoluminescence, and photoinduced absorption spectroscopy. Even though electroluminescence spectra were dominated by PtOEP at a concentration of only 0.2 wt% PtOEP, Forster transfer of singlet excitons was weak and there was no evidence for Dexter transfer of triplet excitons. We conclude that the dominant emission mechanism in doped LED's is charge trapping followed by recombination on PtOEP molecules
-
Microstructural properties of over-doped GaN-based diluted magnetic semiconductors grown by MOCVD
International Nuclear Information System (INIS)
Tao Zhikuo; Zhang Rong; Xiu Xiangqian; Cui Xugao; Li Xin; Xie Zili; Zheng Youdou; Li Li; Zheng Rongkun; Ringer, Simon P
2012-01-01
We have grown transition metal (Fe, Mn) doped GaN thin films on c-oriented sapphire by metal-organic chemical vapor deposition. By varying the flow of the metal precursor, a series of samples with different ion concentrations are synthesized. Microstructural properties are characterized by using a high-resolution transmission electron microscope. For Fe over-doped GaN samples, hexagonal Fe 3 N clusters are observed with Fe 3 N(0002) parallel to GaN (0002) while for Mn over-doped GaN, hexagonal Mn 6 N 2.58 phases are observed with Mn 6 N 2.58 (0002) parallel to GaN(0002). In addition, with higher concentration ions doping into the lattice matrix, the partial lattice orientation is distorted, leading to the tilt of GaN(0002) planes. The magnetization of the Fe over-doped GaN sample is increased, which is ascribed to the participation of ferromagnetic iron and Fe 3 N. The Mn over-doped sample displays very weak ferromagnetic behavior, which probably originates from the Mn 6 N 2.58 . (semiconductor materials)
-
Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO
International Nuclear Information System (INIS)
Korhonen, E; Prozheeva, V; Tuomisto, F; Bierwagen, O; Speck, J S; White, M E; Galazka, Z; Liu, H; Izyumskaya, N; Avrutin, V; Özgür, Ü; Morkoç, H
2015-01-01
We present positron annihilation results on Sb-doped SnO 2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO 2 the concentrations appear too low to cause significant compensation. (invited article)
-
Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO
Korhonen, E.; Prozheeva, V.; Tuomisto, F.; Bierwagen, O.; Speck, J. S.; White, M. E.; Galazka, Z.; Liu, H.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.
2015-02-01
We present positron annihilation results on Sb-doped SnO2 and ZnO thin films. The vacancy types and the effect of vacancies on the electrical properties of these intrinsically n-type transparent semiconducting oxides are studied. We find that in both materials low and moderate Sb-doping leads to formation of vacancy clusters of variable sizes. However, at high doping levels cation vacancy defects dominate the positron annihilation signal. These defects, when at sufficient concentrations, can efficiently compensate the n-type doping produced by Sb. This is the case in ZnO, but in SnO2 the concentrations appear too low to cause significant compensation.
-
Abadli, S.; Mansour, F.; Perrera, E. Bedel
We have investigated and modeled the complex phenomenon of boron (B) redistribution process in strongly doped silicon bilayers structure. A one-dimensional two stream transfer model well adapted to the particular structure of bi- layers and to the effects of strong-concentrations has been developed. This model takes into account the instantaneous kinetics of B transfer, trapping, clustering and segregation during the thermal B activation annealing. The used silicon bi-layers have been obtained by low pressure chemical vapor deposition (LPCVD) method, using in-situ nitrogen- doped-silicon (NiDoS) layer and strongly B doped polycrystalline-silicon (P+) layer. To avoid long redistributions, thermal annealing was carried out at relatively lowtemperatures (600 °C and 700 °C) for various times ranging between 30 minutes and 2 hours. The good adjustment of the simulated profiles with the experimental secondary ion mass spectroscopy (SIMS) profiles allowed a fundamental understanding about the instantaneous physical phenomena giving and disturbing the complex B redistribution profiles-shoulders kinetics.
-
Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes
Energy Technology Data Exchange (ETDEWEB)
Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Chakrabarti, P., E-mail: pchakrabarti.ece@iitbhu.ac.in [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)
2016-08-01
In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.
-
Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes
International Nuclear Information System (INIS)
Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta; Chakrabarti, P.
2016-01-01
In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.
-
Luminescence properties of Ce3+ doped gadolinium-calcium-silicaborate glass scintillator
International Nuclear Information System (INIS)
Park, J.M.; Ha, D.H.; Kaewjeang, S.; Maghanemi, U.; Kothan, S.; Kaewkhao, J.; Kim, H.J.
2016-01-01
In this work, the Ce 3+ doped gadolinium-calcium-silicaborate glass scintillators of the composition ratio 25Gd 2 O 3 :10CaO:10SiO 2 :(55−x)B 2 O 3 :xCeF 3 , have been fabricated by using the melt-quenching technique. The doping concentration of the Ce 3+ was varied from 0.05 mol% to 2.5 mol%. The 4f-5d transition of the Ce 3+ allowed scintillation with a fast decay time. The absorption spectrum, X-ray induced emission spectrum, photo luminescence spectrum, laser luminescence spectrum and decay time of the scintillators were measured for studying the luminescence properties. From the X-ray induced emission spectrum result, we checked the trend between doping concentration and light yield. The laser induced luminescence spectrum was measured while changing the temperature from 300 K to 10 K. We also measured the decay time by using the laser excitation of the 0.15 mol% Ce 3+ doped glass scintillator. - Highlights: • Ce 3+ doped gadolinium-calcium-silicaborate glass scintillators were developed. • Glass is easily fabricated with large sizes and various doping materials. • The luminescence properties are studied by using various radiation sources. • The light yield and decay time were measured at low temperature. • One decay time component is found.
-
Carrier transport assisted by dopants in doped poly(N-vinylcarbozole) light-emitting diodes
Energy Technology Data Exchange (ETDEWEB)
Chen Xiaohong [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Liu Ming [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Xu Zheng [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Hou Yanbing [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Teng Feng [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China); Xu Xurong [Institute of Optoelectronic Technology, Bejing Jiaotong University, Beijing 100044 (China)
2004-04-07
We have investigated the transient electroluminescence (EL) onset of the double-layer light-emitting devices made from poly(N-vinylcarbozole) (PVK) doped with 4-(dicyanomethylene)-2-t-butyl-6(1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) and tris(8-hydroxy-quinoline) aluminium (Alq{sub 3}). For the double-layered device in which PVK was doped with 0.1 wt% DCJTB, the EL onset of PVK lags that of DCJTB and Alq{sub 3}, while the EL onset of DCJTB and Alq{sub 3} is simultaneous. However, the EL emission of the double-layered device of PVK/Alq{sub 3} originates only from Alq{sub 3}. The results show that DCJTB dopants can not only help to tunnel electrons from Alq{sub 3} zone to PVK but can also assist electrons transfer in PVK under high electric field by hopping between DCJTB molecules or from DCJTB to PVK sites at a low doping concentration of 0.1 wt%. When the DCJTB doping concentration is 4.0 wt%, the EL onset of Alq{sub 3} lags that of DCJTB. The difference in the EL onsets of DCJTB, Alq{sub 3} and PVK is attributed to the slow build-up of the internal space charge in the vicinity of the interface between PVK and Alq{sub 3}. The electron potential difference of the interface between Alq{sub 3} and PVK doped by DCJTB can be adjusted by changing the DCJTB doping concentration in double-layer devices.
-
Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides
Energy Technology Data Exchange (ETDEWEB)
Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)
2013-11-07
Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10{sup 21} and 2.2 × 10{sup 21} cm{sup −3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y = 0.035 varies approximately as T{sup −3/2} above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K.
-
Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides
International Nuclear Information System (INIS)
Chen, Xi; Salta, Daniel; Zhang, Libin; Weathers, Annie; Zhou, Jianshi; Goodenough, John B.; Shi, Li
2013-01-01
Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8 × 10 21 and 2.2 × 10 21 cm −3 measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 with y = 0.035 varies approximately as T −3/2 above 200 K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823 K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al 0.0035 Ge y Si 0.9965-y ) 1.8 samples with high Ge concentration of y = 0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823 K and accounts for about 12% of the total thermal conductivity at about 800 K
-
Structural and electrical characterization of zinc oxide doped with antimony
Directory of Open Access Journals (Sweden)
G. Juárez Díaz
2014-08-01
Full Text Available In this work we report the results of structural and electrical characterization realized on zinc oxide single crystal samples with (001 orientation, which were doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of 1 and 2 hours under nitrogen environment from a solid source formed by antimony oxide. Electrical characterization by I-V curves and Hall effect shown an increase in acceptor concentration which demonstrates that doping is effective and create holes in zinc oxide samples.
-
International Nuclear Information System (INIS)
Zhang, Jiajia; He, Haiyan; Pan, Bicai
2015-01-01
An intermediate-band (IB) photovoltaic material is an important candidate in developing the new-generation solar cell. In this paper, we propose that the Fe-doped or the Co-doped MoSe 2 just meets the required features in IB photovoltaic materials. Our calculations demonstrate that when the concentration of the doped element reaches 11.11%, the doped MoSe 2 shows a high absorptivity for both infrared and visible light, where the photovoltaic efficiency of the doped MoSe 2 is as high as 56%, approaching the upper limit of photovoltaic efficiency of IB materials. So, the Fe- or Co-doped MoSe 2 is a promising two-dimensional photovoltaic material. (paper)
-
Energy Technology Data Exchange (ETDEWEB)
Iwasa, Yuki, E-mail: iwasa-y@ile.osaka-u.ac.jp [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Yamanoi, Kohei; Iwano, Keisuke; Empizo, Melvin John F.; Arikawa, Yasunobu; Fujioka, Shinsuke; Sarukura, Nobuhiko; Shiraga, Hiroyuki; Takagi, Masaru; Norimatsu, Takayoshi; Azechi, Hiroshi [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Noborio, Kazuyuki; Hara, Masanori; Matsuyama, Masao [Hydrogen Isotope Research Center, Organization for Promotion of Research, University of Toyama, 3190 Gofuku, Toyama 930-8555 (Japan)
2016-11-15
Highlights: • Tritium-doped polystyrene films are fabricated by the Wilzbach method with UV laser and hydrogen plasma irradiation. • The 266-nm laser-irradiated, 355-nm laser-irradiated, and hydrogen plasma-irradiated polystyrene films exhibit higher PSL intensities and specific radioactivities than the non-irradiated sample. • Tritium doping by UV laser irradiation can be largely affected by the laser wavelength because of polystyrene’s absorption. • Hydrogen plasma irradiation results to a more uniform doping concentration even at low partial pressure and short irradiation time. • UV laser and plasma irradiations can be utilized to fabricate tritium-doped polystyrene shell targets for future laser fusion experiments. - Abstract: We investigate the tritium-doping enhancement of polystyrene by ultraviolet (UV) laser and hydrogen plasma irradiation. Tritium-doped polystyrene films are fabricated by the Wilzbach method with UV laser and hydrogen plasma. The 266-nm laser-irradiated, 355-nm laser-irradiated, and hydrogen plasma-irradiated polystyrene films exhibit higher PSL intensities and specific radioactivities than the non-irradiated sample. Tritium doping by UV laser irradiation can be largely affected by the laser wavelength because of polystyrene’s absorption. In addition, UV laser irradiation is more localized and concentrated at the spot of laser irradiation, while hydrogen plasma irradiation results to a more uniform doping concentration even at low partial pressure and short irradiation time. Both UV laser and plasma irradiations can nevertheless be utilized to fabricate tritium-doped polystyrene targets for future laser fusion experiments. With a high doping rate and efficiency, a 1% tritium-doped polystyrene shell target having 7.6 × 10{sup 11} Bq g{sup −1} specific radioactivity can be obtained at a short period of time thereby decreasing tritium consumption and safety management costs.
-
Photoluminescence properties of Li{sup +}-doped KNbO{sub 3}: Eu{sup 3+} phosphors
Energy Technology Data Exchange (ETDEWEB)
Balakrishnaiah, R.; Kim, Dongwoo; Yi, Soungsoo; Kim, Sunghoon [Silla University, Busan (Korea, Republic of); Jang, Kiwan; Lee, Hosueb [Changwon National University, Changwon (Korea, Republic of); Moon, Byungkee; Jeong, Junghyun [Pukyong National University, Busan (Korea, Republic of)
2010-12-15
Different concentrations of Li{sup +}-ions doped KNbO{sub 3}:Eu polycrystalline powder phosphors were prepared by using the conventional solid state reaction method and were characterized by using X-ray diffraction, field emission scanning electron microscopy, and by using photoluminescence excitation and emission measurements. The morphological and the photoluminescence properties of the phosphors were effectively improved with Li-doping. The PL properties as a function of Li concentration in the Li-doped KNbO{sub 3}:Eu phosphors using different excitation wavelengths, along with a comparison of results with these in similar reported works, are discussed in the present work.
-
Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film.
Pu, Nen-Wen; Liu, Wei-Sheng; Cheng, Huai-Ming; Hu, Hung-Chun; Hsieh, Wei-Ting; Yu, Hau-Wei; Liang, Shih-Chang
2015-09-21
: In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10 - ⁴ Ω/cm), carrier concentration (4.1 × 10 21 cm - ³), carrier mobility (10 cm²/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>10 21 cm - ³) with a high figure of merit (81.1 × 10 - ³ Ω - ¹) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.
-
Doping and thrombosis in sports.
Lippi, Giuseppe; Banfi, Giuseppe
2011-11-01
Historically, humans have long sought to enhance their "athletic" performance to increase body weight, aggressiveness, mental concentration and physical strength, contextually reducing fatigue, pain, and improving recovery. Although regular training is the mainstay for achieving these targets, the ancillary use of ergogenic aids has become commonplace in all sports. The demarcation between ergogenic aids and doping substances or practices is continuously challenging and mostly based on perceptions regarding the corruption of the fairness of competition and the potential side effects or adverse events arising from the use of otherwise unnecessary ergogenic substances. A kaleidoscope of side effects has been associated with the use of doping agents, including behavioral, skeletal, endocrinologic, metabolic, hemodynamic, and cardiovascular imbalances. Among the various doping substances, the most striking association with thrombotic complications has been reported for androgenic anabolic steroids (i.e., cardiomyopathy, fatal and nonfatal arrhythmias, myocardial infarction [MI], intracardiac thrombosis, stroke, venous thromboembolism [VTE], limb arterial thrombosis, branch retinal vein occlusion, cerebral venous sinus thrombosis) and blood boosting (i.e., VTE and MI, especially for epoetin and analogs). The potential thrombotic complication arising from misuse of other doping agents such as the administration of cortisol, growth hormone, prolactin, cocaine, and platelet-derived preparations is instead speculative or anecdotal at best. The present article provides an overview on the epidemiological association as well as the underlying biochemical and biological mechanisms linking the practice of doping in sports with the development of thrombosis. © Thieme Medical Publishers.
-
Energy Technology Data Exchange (ETDEWEB)
Yanagida, Takayuki; Fukabori, Akihiro; Fujimoto, Yutaka; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira Aoba-ku, 980-8577 Sendai (Japan); Ikesue, Akio [World Labo, Co. Ltd., Mutsuno 2-4-1, Atsuta, 456-0023 Nagoya (Japan); Kataoka, Jun [School of Advanced Science and Engineering,Waseda University, Ohkubo 3-4-1, Shinjuku, 169-0072 Tokyo (Japan)
2011-01-15
Transparent ceramics of Pr-doped (0.2 mol%, 0.6 mol%, 1 mol%, and 2 mol%) Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) scintillators produced by the sintering method are discussed. These materials were cut to the specimens with physical dimensions of 5 x 5 x 2 mm{sup 3}. Similar size specimens were also prepared from Czochralski grown Pr:LuAG single crystals to compare scintillation properties. Their transmittance and radio luminescence spectra were evaluated. All specimens were highly transparent in wavelength range above 300 nm, and intense Pr{sup 3+} 5d-4f emission was detected around 310 and 370 nm under excitation with X-ray. Under {sup 137}Cs {gamma}-ray is irradiation, 2 keV photo-absorption peaks were also clearly observed in each sample. The Pr 0.6 mol% doped LuAG ceramics demonstrated highest light yield achievable among the ceramics, and it was half of that observed in the single crystals. Under pulse X-ray excitation, the decay time constants became faster when Pr concentration increased, and. the fastest decay ({proportional_to}5.7 ns time constant) was noticed in the 2 mol% doped ceramic. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
-
Doped silicene: Evidence of a wide stability range
Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo
2011-01-01
to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced
-
Gain investigation of Perylene-Red-doped PMMA for stimulated luminescent solar concentrators.
Kaysir, Md Rejvi; Fleming, Simon; Argyros, Alexander
2018-04-01
Luminescent solar concentrators (LSCs) utilizing stimulated emission by a seed laser are a promising approach to overcome the limitations of conventional LSCs, with a significant reduction of the photovoltaic material. In our previous work, we demonstrated the principle of a stimulated LSC (s-LSC) and correspondingly developed a model for quantifying the output power of such a system, taking into account different important physical parameters. The model suggested Perylene Red (PR) dye as a potential candidate for s-LSCs. Here, we experimentally investigate the gain of PR-doped polymethyl methacrylate (PMMA) required for s-LSCs using a single pump wavelength (instead of the solar spectrum) as a proof of principle. The results found from the experiment are well matched with the previously developed numerical model except for gain saturation, which occurs at a comparatively small seed laser signal power. To investigate the gain saturation, two approaches were taken: investigating (i) spectral hole burning and (ii) triplet state absorption. Experimental investigation of spectral hole burning with PR dyes showed a small effect on the gain saturation. We developed a general state model considering triplet state absorption of the PR dyes for the second approach. The state model suggests that the PR dyes suffer from significant triplet state absorption loss, which obstructs the normal operation of the PR-based s-LSC system.
-
Yonemaru, Naoyuki; Kumamoto, Hiroki; Takahashi, Keitaro; Kuroyanagi, Sachiko
2018-04-01
A new detection method for ultra-low frequency gravitational waves (GWs) with a frequency much lower than the observational range of pulsar timing arrays (PTAs) was suggested in Yonemaru et al. (2016). In the PTA analysis, ultra-low frequency GWs (≲ 10-10 Hz) which evolve just linearly during the observation time span are absorbed by the pulsar spin-down rates since both have the same effect on the pulse arrival time. Therefore, such GWs cannot be detected by the conventional method of PTAs. However, the bias on the observed spin-down rates depends on relative direction of a pulsar and GW source and shows a quadrupole pattern in the sky. Thus, if we divide the pulsars according to the position in the sky and see the difference in the statistics of the spin-down rates, ultra-low frequency GWs from a single source can be detected. In this paper, we evaluate the potential of this method by Monte-Carlo simulations and estimate the sensitivity, considering only the "Earth term" while the "pulsar term" acts like random noise for GW frequencies 10-13 - 10-10 Hz. We find that with 3,000 milli-second pulsars, which are expected to be discovered by a future survey with the Square Kilometre Array, GWs with the derivative of amplitude of about 3 × 10^{-19} {s}^{-1} can in principle be detected. Implications for possible supermassive binary black holes in Sgr* and M87 are also given.
-
International Nuclear Information System (INIS)
Fang, Dongyu; Lin, Kui; Xue, Tao; Cui, Can; Chen, Xiaoping; Yao, Pei; Li, Huijun
2014-01-01
Highlights: • Mg–Al co-doped ZnO thin films were prepared by sol–gel spin coating method. • The effects of Al doping on structural and optical properties of AMZO thin films were investigated. • The EDS spectra confirmed presence of Mg and Al elements in AMZO thin films. • The optical band gap of AMZO thin films increased with Al doping concentration increased. • The origin of the photoluminescence emissions was discussed. -- Abstract: Mg–Al co-doped ZnO (AMZO) thin films were successfully deposited onto quartz glass substrates by sol–gel spin coating method. The structure, surface morphology, composition, optical transmittance, and photoluminescence properties of AMZO thin films were characterized through X-ray diffraction, scanning electron microscopy with energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy, UV–VIS–NIR spectrophotometry, and fluorescence spectrophotometry. The results indicated that AMZO thin films exhibited preferred orientation growth along the c-axis, and the full width at half maximum of the (0 0 2) diffraction peak decreased first and subsequently increased, reaching a minimum of approximately 0.275° at 3% Al content. The calculated crystallite size increased from 30.21 nm to 40.73 nm. Al doping content increased from 1% to 3% and subsequently reached 19.33 nm for Al doping content at 5%. The change in lattice parameters was demonstrated by the c/a ratio, residual stress, bond length, and volume per unit cell. EDS analysis confirmed the presence of Mg and Al elements in ZnO thin films. The atomic percentage of Mg and Al elements was nearly equal to their nominal stoichiometry within the experimental error. In addition, the optical transmittance of AMZO thin films was over 85% in the visible region, and the optical band gap increased with increasing Al doping concentration. Room temperature photoluminescence showed ultraviolet emission peak and defect emission peak. The defect emission peak of
-
Scintillation properties of YAlO3 doped with Lu and Nd perovskite single crystals
Akatsuka, Masaki; Usui, Yuki; Nakauchi, Daisuke; Kato, Takumi; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki
2018-05-01
YAlO3 (YAP) single crystals doped with Lu and Nd were grown by the Floating Zone (FZ) method to evaluate their scintillation properties particularly emissions in the near-infrared (NIR) range. The Nd concentration was fixed to 0 or 1 mol% while the Lu concentration was varied from 0 to 30%. When X-ray was irradiated, the scintillation of Nd-doped samples was observed predominantly at 1064 nm due to 4F3/2 → 4I11/2 transition of Nd3+. In contrast, a weak emission around 700 nm appeared in the samples doped with only Lu, and the emission origin was attributed to defect centers. In the Nd3+-doped samples, the decay time was 94-157 μs due to the 4f-4f transitions of Nd3+ whereas the Lu-doped samples showed signal with the decay time of 1.45-1.54 ms. The emission origin of the latter signal was attributed to the perovskite lattice defect.
-
Effect of vanadium and yttrium doping on BSCCO superconductors
International Nuclear Information System (INIS)
Mohamed, S.B.; Halim, S.A.; Azhan, H.; Sidek, H.A.A; Tee, T.W.; Hassan, Z.A.
1999-01-01
The effect of vanadium and yttrium doping on the superconductivity is investigated. The doping was done on the calcium site ranging from x=0.00-0.10. The temperature dependence of electrical resistance and AC susceptibility measurements were made on these samples. The zero resistance for vanadium doped samples varied from 107 K (x = 0.00) to 68.5K (x = 0.10), whereas for yttrium doped samples it varied from 107 K (x = 0.00) to 54K (x 0.10). The volume fraction of the 2223 phase for both dopalit decreases witli increasing doping concentration. The nature of the temperature derivative of the resistance curves indicates the presence of a superconducting transition between grains coupled by weak links. The AC susceptibility data show enrichment of the volume fraction of the low Tc phase at higher compositions. The presence of low Tc phase (∼70 K) is visible in the susceptibility data. X-ray diffraction confirms the presence of mixed phases in the samples. (author)
-
Kim, Jiyoung; Jang, Jin-Sung; Peck, Dong-Hyun; Lee, Byungrok; Yoon, Seong-Ho; Jung, Doo-Hwan
2016-08-15
Pt-Pd catalyst supported on nitrogen-doped carbon nanofiber (N-CNF) was prepared and evaluated as a cathode electrode of the direct methanol fuel cell (DMFC). The N-CNF, which was directly synthesized by the catalytic chemical vapor deposition from acetonitrile at 640 °C, was verified as having a change of electrochemical surface properties such as oxygen reduction reaction (ORR) activities and the electrochemical double layer compared with common carbon black (CB). To attain the competitive oxygen reduction reaction activity with methanol tolerance, the Pt and Pd metals were supported on the CB or the N-CNF. The physical and electrochemical characteristics of the N-CNF-supported Pt-Pd catalyst were examined and compared with catalyst supported on the CB. In addition, DMFC single cells using these catalysts as the cathode electrode were applied to obtain I-V polarization curves and constant current operating performances with high-concentration methanol as the fuel. Pt-Pd catalysts had obvious ORR activity even in the presence of methanol. The higher power density was obtained at all the methanol concentrations when it applied to the membrane electrode assembly (MEA) of the DMFC. When the N-CNF is used as the catalyst support material, a better performance with high-concentration methanol is expected.
-
Directory of Open Access Journals (Sweden)
Jiyoung Kim
2016-08-01
Full Text Available Pt-Pd catalyst supported on nitrogen-doped carbon nanofiber (N-CNF was prepared and evaluated as a cathode electrode of the direct methanol fuel cell (DMFC. The N-CNF, which was directly synthesized by the catalytic chemical vapor deposition from acetonitrile at 640 °C, was verified as having a change of electrochemical surface properties such as oxygen reduction reaction (ORR activities and the electrochemical double layer compared with common carbon black (CB. To attain the competitive oxygen reduction reaction activity with methanol tolerance, the Pt and Pd metals were supported on the CB or the N-CNF. The physical and electrochemical characteristics of the N-CNF–supported Pt-Pd catalyst were examined and compared with catalyst supported on the CB. In addition, DMFC single cells using these catalysts as the cathode electrode were applied to obtain I-V polarization curves and constant current operating performances with high-concentration methanol as the fuel. Pt-Pd catalysts had obvious ORR activity even in the presence of methanol. The higher power density was obtained at all the methanol concentrations when it applied to the membrane electrode assembly (MEA of the DMFC. When the N-CNF is used as the catalyst support material, a better performance with high-concentration methanol is expected.
-
Magnetic interaction reversal in watermelon nanostructured Cr-doped Fe nanoclusters
International Nuclear Information System (INIS)
Kaur, Maninder; Qiang, You; Dai, Qilin; Tang, Jinke; Bowden, Mark; Engelhard, Mark; Wu, Yaqiao
2013-01-01
Cr-doped core-shell Fe/Fe-oxide nanoclusters (NCs) were synthesized at varied atomic percentages of Cr from 0 at. % to 8 at. %. The low concentrations of Cr ( 2 O 3 and the Fe core to FeCr alloy. The magnetic interaction in Fe/Fe-oxide NCs (∼25 nm) can be controlled by antiferromagnetic Cr-dopant. We report the origin of σ-FeCr phase at very low Cr concentration (2 at. %) unlike in previous studies, and the interaction reversal from dipolar to exchange interaction in watermelon-like Cr-doped core-shell NCs
-
X-ray characterization Si-doped InAs nanowires grown on GaAs
Energy Technology Data Exchange (ETDEWEB)
Saqib, Muhammad; Biermanns, Andreas; Pietsch, Ullrich [Universitaet Siegen, Festkoerperphysik (Germany); Grap, Thomas; Lepsa, Mihail [Forschungszentrum Juelich, Institut fuer Bio- und Nanosysteme (Germany)
2011-07-01
Semiconductor nanowires (NW) are of particular interest due to the ability to synthesize single-crystalline 1D epitaxial structures and heterostructures in the nanometer range. However, many details of the growth mechanism are not well understood. In particular, understanding and control of doping mechanisms during NW growth are important issues for technological applications. In this contribution we present a x-ray diffraction study of the influence of Si-doping in InAs NWs grown on GaAs(111) substrates using In-assisted MBE growth. With the help of coplanar and asymmetric x-ray diffraction, we monitor the evolution of the lattice constants and structure of the InAs NWs as function of doping concentration. We observe that increasing the nominal doping concentration leads to the appearance of additional diffraction maxima corresponding to material whose vertical lattice parameter is 1% smaller than that of the undoped nanowires. Those lattice parameters can be attributed with alloy formation in the form of island like crystallites.
-
Ferromagnetic properties of Mn-doped AlN
International Nuclear Information System (INIS)
Li, H.; Bao, H.Q.; Song, B.; Wang, W.J.; Chen, X.L.; He, L.J.; Yuan, W.X.
2008-01-01
Mn-doped AlN polycrystalline powders with a wurtzite structure were synthesized by solid-state reactions. A red-orange band at 600 nm, due to Mn 3+ incorporated into the AlN lattice, is observed in the photoluminescence (PL) spectrum at room temperature (RT). Magnetic measurements show the samples possess hysteresis loops up to 300 K, indicating that the obtained powders are ferromagnetic at around RT. The Mn concentration-induced RT ferromagnetism is less than 1 at%. Our results confirm that the RT ferromagnetism can be realized in Mn-doped AlN
-
International Nuclear Information System (INIS)
Shao, Xiji; Li, Detian; Cai, Jianqiu; Luo, Haijun; Dong, Changkun
2016-01-01
Graphical abstract: - Highlights: • Substitutional nitrogen atom doping in capped (5, 5) SWNT is investigated. • Serious defects appear from breaks of C−N bonds with N contents of above 23.3 at.%. • Work function drops after N doping and may reach 4.1 eV. - Abstract: The structural and electronic properties of the capped (5, 5) single-walled carbon nanotube (SWNT), including the structural stability, the work function, and the charge transfer performance, are investigated for the substitutional nitrogen atom doping under different concentrations by first-principles density functional theory. The geometrical structure keeps almost intact with single or two N atom doping, while C−N bonds may break up with serious defects for N concentrations of 23.3 at.% and above. The SWNT remains metallic and the work function drops after doping due to the upward shift of Fermi level, leading to the increase of the electrical conductivity. N doping enhances the oxygen reduction activity stronger than N adsorption because of higher charge transfers.
-
N-Type delta Doping of High-Purity Silicon Imaging Arrays
Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh
2005-01-01
A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including
-
Positron Annihilation Lifetime Study of Pure and Doped Polyvinyl Chloride with Al2O3
International Nuclear Information System (INIS)
Abdel-Hady, E.E.; Hamdy, F. M. M.; Alaa, H.B.
2005-01-01
Positron annihilation lifetime of pure and doped polyvinyl chloride (PVC) with Al 2 O 3 reflect the effect of concentration as well as temperature on free volume. Therefore, variations of the ortho-positronium (o-Ps) lifetime and its intensity have been correlated with changes in the dielectric properties of the pure and doped PVC. The o-Ps lifetime and its intensity show a linear dependence with a discontinuity at 20 % concentration of Al 2 O 3 . The size and the fractional of the o-Ps hole volume were estimated from the positron annihilation parameters. Therefore, the temperature dependence of the electrical conductivity and the positron annihilation parameters on pure and doped PVC with 20 % Al 2 O 3 were studied in the range from 20 to 140 degree C. The shift of the glass transition temperature to lower temperature for the 20 % Al 2 O 3 doped PVC might explain the increase in the electrical conductivity with the concentration of the additive
-
Size Dependence of Doping by a Vacancy Formation Reaction in Copper Sulfide Nanocrystals
Energy Technology Data Exchange (ETDEWEB)
Elimelech, Orian [The Institute of Chemistry and The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904 Israel; Liu, Jing [Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook NY 11794 USA; Plonka, Anna M. [Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook NY 11794 USA; Frenkel, Anatoly I. [Department of Materials Science and Chemical Engineering, Stony Brook University, Stony Brook NY 11794 USA; Banin, Uri [The Institute of Chemistry and The Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem, Jerusalem 91904 Israel
2017-07-19
Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu2S) NCs through a redox reaction with iodine molecules (I2), which formed vacancies accompanied by a localized surface plasmon response. X-ray spectroscopy and diffraction reveal transformation from Cu2S to Cu-depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sized NCs, and the growth of CuI on the NC surface, which is favored on well-defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.
-
Improving the selective cancer killing ability of ZnO nanoparticles using Fe doping.
Thurber, Aaron; Wingett, Denise G; Rasmussen, John W; Layne, Janet; Johnson, Lydia; Tenne, Dmitri A; Zhang, Jianhui; Hanna, Charles B; Punnoose, Alex
2012-06-01
This work reports a new method to improve our recent demonstration of zinc oxide (ZnO) nanoparticles (NPs) selectively killing certain human cancer cells, achieved by incorporating Fe ions into the NPs. Thoroughly characterized cationic ZnO NPs (∼6 nm) doped with Fe ions (Zn(1-x )Fe (x) O, x = 0-0.15) were used in this work, applied at a concentration of 24 μg/ml. Cytotoxicity studies using flow cytometry on Jurkat leukemic cancer cells show cell viability drops from about 43% for undoped ZnO NPs to 15% for ZnO NPs doped with 7.5% Fe. However, the trend reverses and cell viability increases with higher Fe concentrations. The non-immortalized human T cells are markedly more resistant to Fe-doped ZnO NPs than cancerous T cells, confirming that Fe-doped samples still maintain selective toxicity to cancer cells. Pure iron oxide samples displayed no appreciable toxicity. Reactive oxygen species generated with NP introduction to cells increased with increasing Fe up to 7.5% and decreased for >7.5% doping.
-
Omri, Karim; El Ghoul, Jaber; Lemine, O. M.; Bououdina, M.; Zhang, Bei; El Mir, Lassaad
2013-01-01
Mn doped ZnO nanoparticles with different doping concentration (1, 2, 3, 4, 5 at.%) were prepared by sol-gel method using supercritical drying conditions of ethyl alcohol. The structural, morphological, optical and magnetic properties of the as-prepared nanoparticles were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV measurements and superconducting quantum interference device (SQUID). The structural properties showed that the undoped and Mn doped ZnO nanoparticles exhibit hexagonal wurtzite structure. From the optical studies, the transmittance in UV region was decreased with the increase of Mn concentration. For Mn doped ZnO nanoparticles the optical band gap varies between 3.34 eV and 3.22 eV. It was found that the doping Mn 2+ ions have a significant influence on the optical properties. The magnetic characterization of the samples with 1% and 5% Mn concentrations reveal diamagnetic behavior for the first one and the presence of both paramagnetic and ferromagnetic behavior for the second. The room ferromagnetic component is due to the presence of the secondary phase ZnOMn3 which is confirmed by XRD study. © 2013 Elsevier Ltd. All rights reserved.
-
Omri, Karim
2013-08-01
Mn doped ZnO nanoparticles with different doping concentration (1, 2, 3, 4, 5 at.%) were prepared by sol-gel method using supercritical drying conditions of ethyl alcohol. The structural, morphological, optical and magnetic properties of the as-prepared nanoparticles were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV measurements and superconducting quantum interference device (SQUID). The structural properties showed that the undoped and Mn doped ZnO nanoparticles exhibit hexagonal wurtzite structure. From the optical studies, the transmittance in UV region was decreased with the increase of Mn concentration. For Mn doped ZnO nanoparticles the optical band gap varies between 3.34 eV and 3.22 eV. It was found that the doping Mn 2+ ions have a significant influence on the optical properties. The magnetic characterization of the samples with 1% and 5% Mn concentrations reveal diamagnetic behavior for the first one and the presence of both paramagnetic and ferromagnetic behavior for the second. The room ferromagnetic component is due to the presence of the secondary phase ZnOMn3 which is confirmed by XRD study. © 2013 Elsevier Ltd. All rights reserved.
-
Energy Technology Data Exchange (ETDEWEB)
Wu, Xu; Wang, Yihua [Zhejiang Sci-Tech University, College of Materials and Textiles, Hangzhou (China); Yang, Bin [Zhejiang Sci-Tech University, Ministry of Education, Key Laboratory of Advanced Textile Materials and Manufacturing Technology, College of Materials and Textiles, Hangzhou (China); Zhejiang Sci-Tech University, College of Materials and Textiles, Hangzhou (China)
2014-11-15
This paper studies the effect of Sn doping on the morphological, structural, and electrical properties of the Sn-doping In{sub 2}O{sub 3} nanofiber networks. In{sub 2}O{sub 3}-based nanofibers with various relative concentration of Sn precursor (0-20 mol%) were fabricated through the electrospinning method. Scanning electron microscopy observations show that, depending on the relative concentration of SnCl{sub 4} in the starting materials, the doped nanofibers with different morphologies, from smooth to corn-like and then to accidented, are fabricated. Transmission electron microscopy and X-ray diffraction analyses reveal that the Sn dopants influence the growth direction of seeds, resulting in doped nanoparticles having diverse shapes and sizes, which are critical for the formation of doped nanofiber with different morphology. From these nanofiber networks, we fabricated several thin sheets to characterize the effect of Sn concentration on the electrical resistivity. The resistivity of thin sheets decreased significantly before the doping concentration up to 12.5 mol%, and then increased slightly at a larger addition. This work will assist further understanding the formation of Sn-doped In{sub 2}O{sub 3} nanofibers and is expected to be extended to other transparent conductive oxides. (orig.)
-
Energy Technology Data Exchange (ETDEWEB)
Saha, B., E-mail: biswajit.physics@gmail.com [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India); Department of Physics, National Institute of Technology Agartala, Jirania 799046, Tripura (India); Das, N.S.; Chattopadhyay, K.K. [Thin Film and Nano Science Laboratory, Department of Physics, Jadavpur University, 700 032 Kolkata (India)
2014-07-01
Ni doped ZnO thin films with oxygen deficiency have been synthesized on glass substrates by radio frequency magnetron sputtering technique using argon plasma. The combined effect of point defects generated due to oxygen vacancies and Ni doping on the optical and electrical properties of ZnO thin films has been studied in this work. Ni doping concentrations were varied and the structural, optical and electrical properties of the films were studied as a function of doping concentrations. The films were characterized with X-ray diffractometer, UV–Vis–NIR spectrophotometer, X-ray photoelectron spectroscopy, atomic force microscopy and electrical conductivity measurements. Oxygen deficient point defects (Schottky defects) made the ZnO thin film highly conducting while incorporation of Ni dopant made it more functional regarding their electrical and optical properties. The films were found to have tunable electrical conductivity with Ni doping concentrations. - Highlights: • ZnO thin films prepared by radio frequency magnetron sputtering technique • Synthesis process was stimulated to introduce Schottky-type point defects. • Point defects and external doping of Ni made ZnO thin films more functional. • Point defect induced high electrical conductivity in ZnO thin film. • Significant shift in optical bandgap observed in ZnO with Ni doping concentrations.
-
Wu, Yanfei; Fan, Lele; Liu, Qinghua; Chen, Shi; Huang, Weifeng; Chen, Feihu; Liao, Guangming; Zou, Chongwen; Wu, Ziyu
2015-01-01
The mechanism for regulating the critical temperature (TC) of metal-insulator transition (MIT) in ions-doped VO2 systems is still a matter of debate, in particular, the unclear roles of lattice distortion and charge doping effects. To rule out the charge doping effect on the regulation of TC, we investigated Ti4+-doped VO2 (TixV1-xO2) system. It was observed that the TC of TixV1-xO2 samples first slightly decreased and then increased with increasing Ti concentration. X-ray absorption fine structure (XAFS) spectroscopy was used to explore the electronic states and local lattice structures around both Ti and V atoms in TixV1-xO2 samples. Our results revealed the local structure evolution from the initial anatase to the rutile-like structure around the Ti dopants. Furthermore, the host monoclinic VO2 lattice, specifically, the VO6 octahedra would be subtly distorted by Ti doping. The distortion of VO6 octahedra and the variation of TC showed almost the similar trend, confirming the direct effect of local structural perturbations on the phase transition behavior. By comparing other ion-doping systems, we point out that the charge doping is more effective than the lattice distortion in modulating the MIT behavior of VO2 materials. PMID:25950809
-
Luminescent Solar Concentrators with Fibre Geometry
Edelenbosch, O.Y.; Fisher, M.; Patrignani, L.; Sark, W.G.J.H.M. van; Chatten, A.J.
2013-01-01
The potential of a fibre luminescent solar concentrator has been explored by means of both analytical and ray-tracing techniques. Coated fibres have been found to be more efficient than homogeneously doped fibres, at low absorption. For practical fibres concentration is predicted to be linear
-
Room temperature ferromagnetism in Fe-doped CuO nanoparticles.
Layek, Samar; Verma, H C
2013-03-01
The pure and Fe-doped CuO nanoparticles of the series Cu(1-x)Fe(x)O (x = 0.00, 0.02, 0.04, 0.06 and 0.08) were successfully prepared by a simple low temperature sol-gel method using metal nitrates and citric acid. Rietveld refinement of the X-ray diffraction data showed that all the samples were single phase crystallized in monoclinic structure of space group C2/c with average crystallite size of about 25 nm and unit cell volume decreases with increasing iron doping concentration. TEM micrograph showed nearly spherical shaped agglomerated particles of 4% Fe-doped CuO with average diameter 26 nm. Pure CuO showed weak ferromagnetic behavior at room temperature with coercive field of 67 Oe. The ferromagnetic properties were greatly enhanced with Fe-doping in the CuO matrix. All the doped samples showed ferromagnetism at room temperature with a noticeable coercive field. Saturation magnetization increases with increasing Fe-doping, becomes highest for 4% doping then decreases for further doping which confirms that the ferromagnetism in these nanoparticles are intrinsic and are not resulting from any impurity phases. The ZFC and FC branches of the temperature dependent magnetization (measured in the range of 10-350 K by SQUID magnetometer) look like typical ferromagnetic nanoparticles and indicates that the ferromagnetic Curie temperature is above 350 K.
-
Photoconductivity properties of {delta}-Si doped InGaAs quantum well
Energy Technology Data Exchange (ETDEWEB)
Campo, Junior, V Leira; Marega, Junior, E; Rossi, J C; Lubyshev, D I; Gonzalez Borrero, P P; Basmaji, P [Sao Paulo Univ., Sao Carlos, SP (Brazil). Inst. de Fisica
1996-12-31
Full text. The semiconductors thin films with doping level near Anderson transition have high photo sensitivity in the photo conductivity regime. The maximum sensitivity of these photodetectors occurs under illumination when the system transform from semi-insulating to semi-metal. The ratio between deep and shallow levels concentration in this case should be near the unity with a total impurity concentration near 10{sup 15} cm{sup -3}, that difficult to control at the bulk doping. The frequency response in these devices are limited by absorption thickness ({approx}500-300 nm). In present work we report the results of visible-infrared photo detector (PD) preparation by using molecular beam epitaxy. For development of frequency response and wavelength range increase to infrared area we use {delta}-doped In{sub 0.2} Ga{sub 0.8} As quantum well. The doping level in {delta}-Si layer on the middle of QW was 2 x 10{sup 12} cm{sup -3}, that was enough for shift of deep levels-shallow levels concentration ratio to anderson transition in the area near QW. At the illumination all photoexcited carriers was collected by QW. The deepness of photo sensitivity space area is limiters by few nanometers near the QW, that increase the frequency properties of PD. Photo current spectra show high sensibility ({Delta}) (R/R=15%) at cut-off frequency up 1.25 eV. This explain strong optical absorption by QW in the infrared area. The future work will focalized on introducing {delta}-doped In Ga As superlattice for linearization of PD spectrum characteristics. (author)
-
International Nuclear Information System (INIS)
Guo Fengyun; Lue Qiang; Sun Liang; Li Hongtao; Zhen Xihe; Xu Yuheng; Zhao Liancheng
2006-01-01
A series of the double doped lithium niobate (LiNbO 3 , LN) single crystals had been grown by Czochralski method. The Curie temperatures of various concentrations doped or [Li]/[Nb] ratio LN crystals measured by differential thermal analysis (DTA) were discussed to investigate their defect structures with Safaryan et al. new approach about LN lattice defect structure using Curie temperatures calculated. Infrared transmission spectra of various concentrations doped were used to compare the investigation above. The results show that the lithium vacancy model is the more probable to describe the lattice defect structure of the doped LN single crystal
-
Thermoelectric performance of electron and hole doped PtSb2
Saeed, Yasir; Singh, Nirpendra; Parker, D.; Schwingenschlö gl, Udo
2013-01-01
We investigate the thermoelectric properties of electron and hole doped PtSb2. Our results show that for doping of 0.04 holes per unit cell ( 1.5×1020 cm−3 ) PtSb2 shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb2 is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.
-
Thermoelectric performance of electron and hole doped PtSb2
Saeed, Yasir
2013-04-30
We investigate the thermoelectric properties of electron and hole doped PtSb2. Our results show that for doping of 0.04 holes per unit cell ( 1.5×1020 cm−3 ) PtSb2 shows a high Seebeck coefficient at room temperature, which can also be achieved at other temperatures by controlling the carrier concentration (both electron and hole). The electrical conductivity becomes temperature independent when the doping exceeds some 0.2 electrons/holes per unit cell. The figure of merit at 800 K in electron and hole doped PtSb2 is comparatively low at 0.13 and 0.21, respectively, but may increase significantly with As alloying due to the likely opening of a band gap and reduction of the lattice thermal conductivity.
-
Properties of fluorine and tin co-doped ZnO thin films deposited by sol–gel method
International Nuclear Information System (INIS)
Pan, Zhanchang; Zhang, Pengwei; Tian, Xinlong; Cheng, Guo; Xie, Yinghao; Zhang, Huangchu; Zeng, Xiangfu; Xiao, Chumin; Hu, Guanghui; Wei, Zhigang
2013-01-01
Highlights: •F and Sn co-doped ZnO thin films were synthesized by sol–gel method. •The effects of different F doping concentrations were investigated. •The co-doped nanocrystals exhibit good crystal quality. •The origin of the photoluminescence emissions was discussed. •The films showed high transmittance and low resistivity. -- Abstract: Highly transparent and conducting fluorine (F) and tin (Sn) co-doped ZnO (FTZO) thin films were deposited on glass substrates by the sol–gel processing. The structure and morphology of the films are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) with various F doping concentrations. SEM images showed that the hexagonal ZnO crystals were well-arranged on the glass substrates and the HRTEM images indicated that the individual nanocrystals are highly oriented and exhibited a perfect lattice structure. Owing to its high carrier concentration and mobility, as well as good crystal quality, a minimum resistivity of 1 × 10 −3 Ω cm was obtained from the FTZO thin film with 3% F doping, and the average optical transmittance in the entire visible wavelength region was higher than 90%. The X-ray photoelectron spectroscopy (XPS) study confirmed the substitution of Zn 2+ by Sn ions and Room temperature photoluminescence (PL) observed for pure and FTZO thin films suggested the films exhibit a good crystallinity with a very low defect concentration
-
Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film
Directory of Open Access Journals (Sweden)
Nen-Wen Pu
2015-09-01
Full Text Available : In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm, carrier concentration (4.1 × 1021 cm−3, carrier mobility (10 cm2/Vs, and mean visible-light transmittance (90% at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3 with a high figure of merit (81.1 × 10−3 Ω−1 demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.
-
Energy Technology Data Exchange (ETDEWEB)
Hu, Zijun; Chen, Da, E-mail: dchen_80@hotmail.com; Wang, Sen; Zhang, Ning; Qin, Laishun, E-mail: qinlaishun@cjlu.edu.cn; Huang, Yuexiang
2017-06-15
Highlights: • Effective Sm doping into BiFeO{sub 3} nanoparticles was obtained by a facile sol-gel route. • Band gap of Sm-doped BiFeO{sub 3} nanoparticles was regulated by the dopant concentration. • Sm-doped BiFeO{sub 3} nanoparticles exhibited superior photocatalytic activities. • The possible photocatalytic mechanism of Sm-doped BiFeO{sub 3} nanospheres was discussed. - Abstract: In this work, the effect of Sm doping on the structural and photocatalytic properties of BiFeO{sub 3} (BFO) was investigated. A series of Sm doped BFO nanoparticles containing different Sm dopant contents (Bi{sub (1−x)}Sm{sub x}FeO{sub 3}, x = 0.00, 0.01, 0.03, 0.05, 0.07, 0.10) were synthesized via a simple sol-gel route. It was revealed that Sm{sup 3+} ions were successfully doped into BFO nanoparticles, and the band gap value was gradually decreased when increasing Sm dopant concentration. The photocatalytic activity of Sm-doped BFO photocatalyst was significantly affected by the Sm doping content. Compared to pure BFO, the Sm-doped BFO samples exhibited much higher photocatalytic activity. The improved photocatalytic activity of Sm-doped BFO could be attributed to the enhanced visible light absorption and the efficient separation of photogenerated electrons and holes derived from Sm dopant trapping level in the Sm-doped BFO samples. In addition, the possible photocatalytic mechanism of Sm-doped BFO photocatalyst was also proposed.
-
Influence of dopant concentration on the electrical properties of the CdSe-PMMA nanocomposite
Energy Technology Data Exchange (ETDEWEB)
Kaur, Ramneek; Tripathi, S. K., E-mail: surya@pu.ac.in, E-mail: surya-tr@yahoo.com [Department of Physics, Center of Advanced Study in Physics, Panjab University, Chandigarh-160 014 (India)
2016-05-06
This paper reports the synthesis and electrical characterization of CdSe-PMMA nanocomposite. CdSe-PMMA nanocomposite has been prepared by ex-situ technique through chemical route. The influence of three different Ag doping concentrations on the electrical properties has been studied in the temperature range ∼ 303-353 K. Transmission electron micrograph reveals the spherical morphology of the CdSe nanoparticles and their proper dispersion in the PMMA matrix. The electrical conduction of the polymer nanocomposites is through thermally activated process with single activation energy. With Ag doping, initially the activation energy increases upto 0.2 % Ag doping concentration but with further increase in Ag concentration, it decreases. This behavior has been discussed on the basis of randomly oriented grain boundaries and defect states. Thus, the results indicate that the transport properties of the polymer nanocomposites can be tailored by controlled doping concentration.
-
Influence of dopant concentration on the electrical properties of the CdSe-PMMA nanocomposite
International Nuclear Information System (INIS)
Kaur, Ramneek; Tripathi, S. K.
2016-01-01
This paper reports the synthesis and electrical characterization of CdSe-PMMA nanocomposite. CdSe-PMMA nanocomposite has been prepared by ex-situ technique through chemical route. The influence of three different Ag doping concentrations on the electrical properties has been studied in the temperature range ∼ 303-353 K. Transmission electron micrograph reveals the spherical morphology of the CdSe nanoparticles and their proper dispersion in the PMMA matrix. The electrical conduction of the polymer nanocomposites is through thermally activated process with single activation energy. With Ag doping, initially the activation energy increases upto 0.2 % Ag doping concentration but with further increase in Ag concentration, it decreases. This behavior has been discussed on the basis of randomly oriented grain boundaries and defect states. Thus, the results indicate that the transport properties of the polymer nanocomposites can be tailored by controlled doping concentration.
-
Novruzov, V. D.; Keskenler, E. F.; Tomakin, M.; Kahraman, S.; Gorur, O.
2013-09-01
Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu2S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.
-
Energy Technology Data Exchange (ETDEWEB)
Novruzov, V.D. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Keskenler, E.F., E-mail: keskenler@gmail.com [Department of Nanotechnology Engineering, Recep Tayyip Erdogan University, Rize (Turkey); Tomakin, M. [Department of Physics, Recep Tayyip Erdogan University, Rize (Turkey); Kahraman, S. [Department of Physics, Mustafa Kemal University, Hatay (Turkey); Gorur, O. [Department of Physics, Abant Izzet Baysal University, Bolu (Turkey)
2013-09-01
Boron doped CdS thin films were deposited by spray pyrolysis method using perfume atomizer. The effects of ultraviolet light on the structural, optical and electrical properties of B-doped CdS thin films were investigated as a function of dopant concentration (B/Cd). X-ray diffraction studies showed that all samples were polycrystalline nature with hexagonal structure. It was determined that the preferred orientation of non-illuminated samples changes from (1 0 1) to (0 0 2) with B concentration. The c lattice constant of films decreases from 6.810 Å to 6.661 Å with boron doping. The XRD peak intensity increased with the illumination for almost all the samples. The lattice parameters of B-doped samples remained nearly constant after illumination. It was found that the optical transmittance, photoluminescence spectra, resistivity and carrier concentration of the B-doped samples are stable after the illumination with UV light. Also the effects of UV light on B-doped CdS/Cu{sub 2}S solar cell were investigated and it was determined that photoelectrical parameters of B-doped solar cell were more durable against the UV light.
-
Nitrogen doping of chemical vapor deposition grown graphene on 4H-SiC (0001)
Energy Technology Data Exchange (ETDEWEB)
Urban, J. M.; Binder, J.; Wysmołek, A. [Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw (Poland); Dąbrowski, P.; Strupiński, W. [Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warsaw (Poland); Kopciuszyński, M.; Jałochowski, M. [Institute of Physics, Maria Curie-Skłodowska University, pl. M. Curie-Skłodowskiej 1, 20-031 Lublin (Poland); Klusek, Z. [Faculty of Physics and Applied Informatics, University of Łódź, ul. Pomorska 149/153, 90-236 Łódź (Poland); Baranowski, J. M. [Faculty of Physics, University of Warsaw, ul. Hoża 69, 00-681 Warsaw (Poland); Institute of Electronic Materials Technology, ul. Wólczyńska 133, 01-919 Warsaw (Poland)
2014-06-21
We present optical, electrical, and structural properties of nitrogen-doped graphene grown on the Si face of 4H-SiC (0001) by chemical vapor deposition method using propane as the carbon precursor and N{sub 2} as the nitrogen source. The incorporation of nitrogen in the carbon lattice was confirmed by X-ray photoelectron spectroscopy. Angle-resolved photoemission spectroscopy shows carrier behavior characteristic for massless Dirac fermions and confirms the presence of a graphene monolayer in the investigated nitrogen-doped samples. The structural and electronic properties of the material were investigated by Raman spectroscopy. A systematical analysis of the graphene Raman spectra, including D, G, and 2D bands, was performed. In the case of nitrogen-doped samples, an electron concentration on the order of 5–10 × 10{sup 12} cm{sup −2} was estimated based upon Raman and Hall effect measurements and no clear dependence of the carrier concentration on nitrogen concentration used during growth was observed. This high electron concentration can be interpreted as both due to the presence of nitrogen in graphitic-like positions of the graphene lattice as well as to the interaction with the substrate. A greater intensity of the Raman D band and increased inhomogeneity, as well as decreased electron mobility, observed for nitrogen-doped samples, indicate the formation of defects and a modification of the growth process induced by nitrogen doping.
-
Structural, optical and ferromagnetic properties of Cr doped TiO2 nanoparticles
International Nuclear Information System (INIS)
Choudhury, Biswajit; Choudhury, Amarjyoti
2013-01-01
Graphical abstract: Doping of Cr 3+ distorts the lattice of TiO 2 , generate oxygen vacancies and create d-band states in the mid band gap of TiO 2 . Incorporation of Cr 3+ also imparts magnetism in non-magnetic TiO 2 by undergoing coupling with the neighboring oxygen vacancies. -- Highlights: • Incorporation of Cr 3+ increases the concentration of oxygen vacancies in TiO 2 nanoparticles. • Doped TiO 2 nanoparticles contain absorption peaks corresponding to d–d transition of Cr 3+ into TiO 2 . • Pure and doped TiO 2 nanoparticles contain emission peaks related to oxygen vacancies. • Pure TiO 2 shows diamagnetism while Cr doped TiO 2 shows ferromagnetism. • The ferromagnetism is due to the interaction of Cr 3+ ions via oxygen vacancies. -- Abstract: Cr doped TiO 2 nanoparticles are prepared with three different concentrations of chromium, 1.5%, 3.0% and 4.5 mol% respectively. Doping decreases the crystallinity and increases the width of the X-ray diffraction peak. The Raman active E g peak of TiO 2 nanoparticles become asymmetric and shifted to higher energy on doping of 4.5% chromium. Electron paramagnetic resonance spectra reveal the presence of Cr 3+ in the host TiO 2 matrix. The absorption spectra of Cr doped TiO 2 nanoparticles contain absorption peaks corresponding to d–d transition of Cr 3+ in octahedral coordination. Most of the visible emission peaks are due to the electrons trapped in the oxygen vacancy centers. Undoped TiO 2 nanoparticles show diamagnetism at room temperature while all chromium doped samples show ferromagnetism. The magnetization of the doped samples increases at 1.5% and 3.0% and decreases at 4.5%. The ferromagnetism arises owing to the interaction of the neighboring Cr 3+ ions via oxygen vacancies. The decrease of magnetization at the highest doping is possibly due to the antiferromagnetic interactions of Cr 3+ pairs or due to Cr 3+ -O 2− -Cr 3+ superexchange interaction in the lattice
-
Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy
Okumura, Hironori; Martin, Denis; Malinverni, Marco; Grandjean, Nicolas
2016-02-01
We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 °C) allows decreasing the incorporation of donor-like defects (p-type doping compensation. As a result, a net acceptor concentration of 7 × 1019 cm-3 was achieved, and the hole concentration measured by Hall effect was as high as 2 × 1019 cm-3 at room temperature. Using such a high Mg doping level, we fabricated GaN backward diodes without polarization-assisted tunneling. The backward diodes exhibited a tunneling-current density of 225 A/cm2 at a reverse bias of -1 V at room temperature.
-
Corrosion and Wear Behaviors of Cr-Doped Diamond-Like Carbon Coatings
Viswanathan, S.; Mohan, L.; Bera, Parthasarathi; Kumar, V. Praveen; Barshilia, Harish C.; Anandan, C.
2017-08-01
A combination of plasma-enhanced chemical vapor deposition and magnetron sputtering techniques has been employed to deposit chromium-doped diamond-like carbon (DLC) coatings on stainless steel, silicon and glass substrates. The concentrations of Cr in the coatings are varied by changing the parameters of the bipolar pulsed power supply and the argon/acetylene gas composition. The coatings have been studied for composition, morphology, surface nature, nanohardness, corrosion resistance and wear resistance properties. The changes in I D / I G ratio with Cr concentrations have been obtained from Raman spectroscopy studies. Ratio decreases with an increase in Cr concentration, and it has been found to increase at higher Cr concentration, indicating the disorder in the coating. Carbide is formed in Cr-doped DLC coatings as observed from XPS studies. There is a decrease in sp 3/ sp 2 ratios with an increase in Cr concentration, and it increases again at higher Cr concentration. Nanohardness studies show no clear dependence of hardness on Cr concentration. DLC coatings with lower Cr contents have demonstrated better corrosion resistance with better passive behavior in 3.5% NaCl solution, and corrosion potential is observed to move toward nobler (more positive) values. A low coefficient of friction (0.15) at different loads is observed from reciprocating wear studies. Lower wear volume is found at all loads on the Cr-doped DLC coatings. Wear mechanism changes from abrasive wear on the substrate to adhesive wear on the coating.
-
Energy Technology Data Exchange (ETDEWEB)
Hu, Yonghong, E-mail: hchyh@njust.edu.cn [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Zeng, Haibo [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Du, Jifu [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu [Beijing Computational Science Research Center, Beijing 100084 (China); Zhang, Shengli [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)
2016-10-01
Through first principle calculations, we studied the structural, electronic and optical properties of ZnO doped by interstitial Mg. With the increase of Mg content (x), the derivations of lattice parameters from the wurtzite ZnO become more and more significant. The Mg-doped ZnO with x below 15.79% is found to be n-type semiconductor. The minimum of energy band gap and light transmittance in high energy region (7.5–25 eV) decrease while the conductivity and refractive index increase with increasing x. Further increasing x up to 20%, the Mg-doped ZnO is found to be direct-band-gap semiconductor with great structural derivation from wurtzite phase. The light transmittance increases while the refractive index decreases with the increase of x due to the change of geometry and electronic structure. So, it’s concluded that the electronic and optical properties of ZnO doped by interstitial Mg may be greatly influenced by Mg content. - Graphical abstract: The minimum of energy gap decreases while the corresponding relative number of electrons into the conduction bands increases when the interstitial Mg content x in Mg-doped ZnO increases (0 ≤ x ≤ 15.79%). - Highlights: • The energy band gap decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The conductivity increases with the increase of interstitial Mg content from 5.88% to 15.79%. • The Mg{sub x}Zn{sub 1-x}O (interstitial Mg content x= 20%) is found to be a direct-band-gap semiconductor. • The light transmittance decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The refractive index increases with the increase of interstitial Mg content from 5.88% to 15.79%.
-
Energy Technology Data Exchange (ETDEWEB)
Watanabe, Shingo [Department of Radiology, Dokkyo Medical University Koshigaya Hospital, 2-1-50, Minami-Koshigaya, Koshigaya-shi, Saitama 343-8555 (Japan); Katada, Yoshiaki, E-mail: yoshiaki@dokkyomed.ac.jp [Department of Radiology, Dokkyo Medical University Koshigaya Hospital, 2-1-50, Minami-Koshigaya, Koshigaya-shi, Saitama 343-8555 (Japan); Gohkyu, Masaki; Nakajima, Masahiro; Kawabata, Hideyuki; Nozaki, Miwako [Department of Radiology, Dokkyo Medical University Koshigaya Hospital, 2-1-50, Minami-Koshigaya, Koshigaya-shi, Saitama 343-8555 (Japan)
2012-12-15
Objectives: The purpose of this study was to investigate whether substantial reduction of the computed tomography (CT) dose is possible in liver CT perfusion imaging by comparing the results of ultralow-dose CT perfusion imaging with those of conventional CT perfusion imaging the same patients and under the same conditions. Materials and methods: The study was composed following two parts: computer simulation and patients study. In computer simulation, noise was added to the images so that the standard deviation (SD) of the CT values in the liver parenchyma became various values using ImageJ. Time density curves (TDCs) were created from the simulated data, and the influence of difference in the SDs on the shapes of the TDCs was investigated. In the patient study, CT perfusion during intra-arterial injection was performed in 30 consecutive patients undergoing transcatheter arterial chemoembolization. CT perfusion images were acquired twice, at 100 mA (CTDI{sub vol}, 300 mGy) for normal and at 20 mA (CTDI{sub vol}, 60 mGy) for the ultralow radiation doses, under the same conditions. Results: No change was observed in the shape of the TDCs and peak values in the analysis of simulation images. A very good correlation was observed between the normal- and ultralow-dose CT images for all analyzed values (R{sup 2} = 0.9885 for blood flow, 0.9269 for blood volume, and 0.8424 for mean transit time). Conclusions: Our results demonstrated that there was no significant difference in the analysis results of perfusion CT between ultralow-dose CT performed using 20% of the conventional dose and normal-dose CT perfusion.
-
Impurity doping processes in silicon
Wang, FFY
1981-01-01
This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.
-
Enhanced photoanisotropic response in azopolymer doped with elongated goethite nanoparticles
International Nuclear Information System (INIS)
Nedelchev, L; Nazarova, D; Berberova, N; Mateev, G; Kostadinova, D; Mariño-Fernández, R; Salgueiriño, V; Schmool, D
2016-01-01
We present a study of the photoinduced birefringence in nanocomposite films of an azopolymer (PAZO) doped with goethite (a-FeOOH, a characteristic antiferromagnetic material) nanoparticles (NPs). The NPs had an elongated shape with a size 15×150 nm, i.e., a ratio of 1:10. Samples were prepared with different concentrations of the NPs in the azopolymer varying from 0% (undoped azopolymer film) to 15 wt %. An unusual dependence of the birefringence on the concentration was observed - two peaks of enhancement at 1 % and at 10 % concentration. Our previous studies on ZnO and SiO 2 NP have indicated only one peak of increase at low concentrations - 0.5 wt % and 2 wt %, respectively. This effect could be related to the elongated shape of the nanoparticles and the presence of two characteristic NPs sizes - 15 and 150 nm. Moreover, the birefringence increase for the samples with 10 wt % NPs concentration (compared with the non-doped samples) was rather significant - nearly 70%. (paper)
-
a Study of Oxygen Precipitation in Heavily Doped Silicon.
Graupner, Robert Kurt
Gettering of impurities with oxygen precipitates is widely used during the fabrication of semiconductors to improve the performance and yield of the devices. Since the effectiveness of the gettering process is largely dependent on the initial interstitial oxygen concentration, accurate measurements of this parameter are of considerable importance. Measurements of interstitial oxygen following thermal cycles are required for development of semiconductor fabrication processes and for research into the mechanisms of oxygen precipitate nucleation and growth. Efforts by industrial associations have led to the development of standard procedures for the measurement of interstitial oxygen in wafers. However practical oxygen measurements often do not satisfy the requirements of such standard procedures. An additional difficulty arises when the silicon wafer has a low resitivity (high dopant concentration). In such cases the infrared light used for the measurement is severely attenuated by the electrons of holes introduced by the dopant. Since such wafers are the substrates used for the production of widely used epitaxial wafers, this measurement problem is economically important. Alternative methods such as Secondary Ion Mass Spectroscopy or Gas Fusion Analysis have been developed to measure oxygen in these cases. However, neither of these methods is capable of distinguishing interstitial oxygen from precipitated oxygen as required for precipitation studies. In addition to the commercial interest in heavily doped silicon substrates, they are also of interest for research into the role of point defects in nucleation and precipitation processes. Despite considerable research effort, there is still disagreement concerning the type of point defect and its role in semiconductor processes. Studies of changes in the interstitial oxygen concentration of heavily doped and lightly doped silicon wafers could help clarify the role of point defects in oxygen nucleation and precipitation
-
Influence of neodymium-doping on structure and properties of yttrium aluminium garnet
DEFF Research Database (Denmark)
Zhang, X.D.; He, W.; Yue, Yuanzheng
2013-01-01
We study the impact of the Nd-doping on the grain formation, the crystal structure, and the fluorescence of the Yttrium Aluminum Garnet (YAG). The results show that Nd-doping leads to the YAG lattice expansion and distortion, and hence to an increase in defect concentration. This is attributed to...
-
Structure and functionality of bromine doped graphite.
Hamdan, Rashid; Kemper, A F; Cao, Chao; Cheng, H P
2013-04-28
First-principles calculations are used to study the enhanced in-plane conductivity observed experimentally in Br-doped graphite, and to study the effect of external stress on the structure and functionality of such systems. The model used in the numerical calculations is that of stage two doped graphite. The band structure near the Fermi surface of the doped systems with different bromine concentrations is compared to that of pure graphite, and the charge transfer between carbon and bromine atoms is analyzed to understand the conductivity change along different high symmetry directions. Our calculations show that, for large interlayer separation between doped graphite layers, bromine is stable in the molecular form (Br2). However, with increased compression (decreased layer-layer separation) Br2 molecules tend to dissociate. While in both forms, bromine is an electron acceptor. The charge exchange between the graphite layers and Br atoms is higher than that with Br2 molecules. Electron transfer to the Br atoms increases the number of hole carriers in the graphite sheets, resulting in an increase of conductivity.
-
Potassium acceptor doping of ZnO crystals
Directory of Open Access Journals (Sweden)
Narendra S. Parmar
2015-05-01
Full Text Available ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 1016 cm−3. IR measurements show a local vibrational mode (LVM at 3226 cm−1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm−1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.
-
Potassium acceptor doping of ZnO crystals
Parmar, Narendra S.; Corolewski, Caleb D.; McCluskey, Matthew D.; Lynn, K. G.
2015-05-01
ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ˜1 × 1016 cm-3. IR measurements show a local vibrational mode (LVM) at 3226 cm-1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O-H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm-1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.
-
Potassium acceptor doping of ZnO crystals
Energy Technology Data Exchange (ETDEWEB)
Parmar, Narendra S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States); Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States); Corolewski, Caleb D.; McCluskey, Matthew D. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)
2015-05-15
ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 10{sup 16} cm{sup −3}. IR measurements show a local vibrational mode (LVM) at 3226 cm{sup −1}, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm{sup −1}. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.
-
Thermoelectric properties of Cu/Ag doped type-III Ba24Ge100 clathrates
Fu, Jiefei; Su, Xianli; Yan, Yonggao; Liu, Wei; Zhang, Zhengkai; She, Xiaoyu; Uher, Ctirad; Tang, Xinfeng
2017-09-01
Type-III Ba24Ge100 clathrates possess low thermal conductivity and high electrical conductivity at room temperature and, as such, have a great potential as thermoelectric materials for power generation. However, the Seebeck coefficient is very low due to the intrinsically high carrier concentration. In this paper, a series of Ba24CuxGe100-x and Ba24AgyGe100-y specimens were prepared by vacuum melting combined with the subsequent spark plasma sintering (SPS) process. Doping Cu or Ag on the Ge site not only suppresses the concentration of electrons but it also decreases the thermal conductivity. In addition, the carrier mobility and the Seebeck coefficient increase due to the decrease in the carrier concentration. Thus, the power factor is greatly improved, leading to an improvement in the dimensionless figure of merit ZT. Cu-doped Ba24Cu6Ge94 reaches the maximum ZT value of about 0.17 at 873 K, while Ag-doped Ba24Ag6Ge94 attains the dimensionless figure of merit ZT of 0.31 at 873 K, more than 2 times higher value compared to un-doped Ba24Ge100.
-
Doping graphene films via chemically mediated charge transfer
Directory of Open Access Journals (Sweden)
Ishikawa Ryousuke
2011-01-01
Full Text Available Abstract Transparent conductive films (TCFs are critical components of a myriad of technologies including flat panel displays, light-emitting diodes, and solar cells. Graphene-based TCFs have attracted a lot of attention because of their high electrical conductivity, transparency, and low cost. Carrier doping of graphene would potentially improve the properties of graphene-based TCFs for practical industrial applications. However, controlling the carrier type and concentration of dopants in graphene films is challenging, especially for the synthesis of p-type films. In this article, a new method for doping graphene using the conjugated organic molecule, tetracyanoquinodimethane (TCNQ, is described. Notably, TCNQ is well known as a powerful electron accepter and is expected to favor electron transfer from graphene into TCNQ molecules, thereby leading to p-type doping of graphene films. Small amounts of TCNQ drastically improved the resistivity without degradation of optical transparency. Our carrier doping method based on charge transfer has a huge potential for graphene-based TCFs.
-
Design Margin Elimination Through Robust Timing Error Detection at Ultra-Low Voltage
Reyserhove, Hans; Dehaene, Wim
2017-01-01
This paper discusses a timing error masking-aware ARM Cortex M0 microcontroller system. Through in-path timing error detection, operation at the point-of-first-failure is possi- ble without corrupting the pipeline state, effectively eliminat- ing traditional timing margins. Error events are flagged and gathered to allow dynamic voltage scaling. The error-aware microcontroller was implemented in a 40nm CMOS process and realizes ultra-low voltage operation down to 0.29V at 5MHz consuming 12.90p...
-
Nature of oxygen donors and radiation defects in oxygen-doped germanium
International Nuclear Information System (INIS)
Fukuoka, Noboru; Atobe, Kozo; Honda, Makoto; Matsuda, Koji.
1991-01-01
The nature of oxygen donors and radiation defects in oxygen-doped germanium were studied through measurements of the infrared absorption spectrum, deep level transient spectroscopy spectrum and carrier concentration. It is revealed that a new donor is not formed in oxygen-doped germanium. An A-center (interstitial oxygen-vacancy pair) forms a complex with a thermal donor in its annealing stage at 60degC-140degC. The introduction rate of defects by 1.5 MeV electron irradiation was enhanced in thermal-donor-doped samples. (author)
-
Energy Technology Data Exchange (ETDEWEB)
Bagastyo, Arseto Y. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Department of Environmental Engineering, Institut Teknologi Sepuluh Nopember, Surabaya 60111 (Indonesia); Batstone, Damien J. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Kristiana, Ina [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Escher, Beate I. [National Research Centre for Environmental Toxicology (Entox), The University of Queensland, Brisbane, QLD 4108 (Australia); Joll, Cynthia [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Radjenovic, Jelena, E-mail: j.radjenovic@uq.edu.au [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia)
2014-08-30
Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L{sup −1} of AOCl and ∼2.3 mg L{sup −1} of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L{sup −1}, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L{sup −1}). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L{sup −1} at 2.4 Ah L{sup −1}), which rapidly decreased to 4 mg L{sup −1}. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD{sup −1} and 0.34 kWh gCOD{sup −1}, respectively, yet it did not demonstrate any improvement regarding by-products formation.
-
Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
Liu, Zhiqiang; Yi, Xiaoyan; Yu, Zhiguo; Yuan, Gongdong; Liu, Yang; Wang, Junxi; Li, Jinmin; Lu, Na; Ferguson, Ian; Zhang, Yong
2016-01-01
In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa1-xN/GaN superlattice structure, by modulation doping of Mg in the AlxGa1-xN barriers, high concentration of holes are generated throughout the material. A hole concentration as high as 1.1 × 1018 cm-3 has been achieved, which is about one order of magnitude higher than that typically achievable by direct doping GaN. Results from first-principle calculations indicate that the coupling and hybridization between Mg 2p impurity and the host N 2p orbitals are main reasons for the generation of resonant states in the GaN wells, which further results in the high hole concentration. We expect this approach to be equally applicable for other high bandgap materials where efficient p-type doing is difficult. Furthermore, a two-carrier-species Hall-effect model is proposed to delineate and discriminate the characteristics of the bulk and 2D hole, which usually coexist in superlattice-like doping systems. The model reported here can also be used to explain the abnormal freeze-in effect observed in many previous reports.
-
Mechanical niobium doping in barium titanate electroceramics
Energy Technology Data Exchange (ETDEWEB)
Velasco-Davalos, I.A., E-mail: ivan.velascodavalos@gmail.com [Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional, Zacatenco, 07338 México D.F. (Mexico); INRS-EMT, 1650 Boul. Lionel-Boulet, Varennes J3X 1S2 (Canada); Ruediger, A. [INRS-EMT, 1650 Boul. Lionel-Boulet, Varennes J3X 1S2 (Canada); Cruz-Rivera, J.J. [Universidad Autónoma de San Luis Potosí, Av. Sierra Leona 550, Lomas, 78210 S.L.P. (Mexico); Gomez-Yanez, C. [Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional, Zacatenco, 07338 México D.F. (Mexico)
2013-12-25
Highlights: •We demonstrate a new doping procedure by Mechanical Alloying (MA). •For small dopant concentrations, charge compensation of Nb is primarily attributed to free electrons. •At higher Nb concentrations cation vacancies prevail as compensation mechanism. -- Abstract: Niobium is a well-established donor dopant for semi-conducting BaTiO{sub 3} ceramics. The conventional procedure to dissolve Nb into BaTiO{sub 3} relies on thermal activation at high temperatures (up to 1500 °C) and even then, large dwell times are necessary due to the small diffusion coefficients of Nb{sup 5+}. In this work, we demonstrate a new doping procedure by Mechanical Alloying (MA), which has already proven its potential for the fabrication of conductive electroceramics. In a planetary mill, powders of BaTiO{sub 3} and Nb{sub 2}O{sub 5} were mixed for up to 540 min. The BaTiO{sub 3} unit cell volume increases with increasing Nb concentration. The electrical properties of conventional and mechanical alloyed samples as a function of Nb concentration are similar, however the mechanically alloyed samples shows a large conductivity that we attribute to a better homogeneity in the structure of MA-processed samples. For small dopant concentrations, charge compensation of the pentavalent Nb is primarily attributed to free electrons. At higher Nb concentrations cation vacancies prevail as compensation mechanism.
-
Energy Technology Data Exchange (ETDEWEB)
Dimitrov, D.; Shieh, H.-P.D
2004-03-15
Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks.
-
Selective Oxidation Using Flame Aerosol Synthesized Iron and Vanadium-Doped Nano-TiO2
Directory of Open Access Journals (Sweden)
Zhong-Min Wang
2011-01-01
Full Text Available Selective photocatalytic oxidation of 1-phenyl ethanol to acetophenone using titanium dioxide (TiO2 raw and doped with Fe or V, prepared by flame aerosol deposition method, was investigated. The effects of metal doping on crystal phase and morphology of the synthesized nanostructured TiO2 were analyzed using XRD, TEM, Raman spectroscopy, and BET nitrogen adsorbed surface area measurement. The increase in the concentration of V and Fe reduced the crystalline structure and the anatase-to-rutile ratios of the synthesized TiO2. Synthesized TiO2 became fine amorphous powder as the Fe and V concentrations were increased to 3 and 5%, respectively. Doping V and Fe to TiO2 synthesized by the flame aerosol increased photocatalytic activity by 6 folds and 2.5 folds, respectively, compared to that of pure TiO2. It was found that an optimal doping concentration for Fe and V were 0.5% and 3%, respectively. The type and concentration of the metal dopants and the method used to add the dopant to the TiO2 are critical parameters for enhancing the activity of the resulting photocatalyst. The effects of solvents on the photocatalytic reaction were also investigated by using both water and acetonitrile as the reaction medium.
-
An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3
Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy
2010-01-01
Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the