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Sample records for ultralow doping concentrations

  1. The chemistry of ultra-low concentrations

    International Nuclear Information System (INIS)

    Vertes, Attila; Kiss, Istvan

    1987-01-01

    Methods for the separation and enrichment of radionuclides in the ultra-low concentration range (coprecipitation, adsorption of radioactive substances on crystals) are disscussed in this chapter of the textbook. The properties and behaviour of ultra-dilute solutions, radiocolloids and the electrochemistry of ultra-dilute solution are also overviewed

  2. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

    KAUST Repository

    Hong, Seung Sae; Cha, Judy J.; Kong, Desheng; Cui, Yi

    2012-01-01

    A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

  3. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

    KAUST Repository

    Hong, Seung Sae

    2012-03-27

    A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

  4. Ultralow concentrations of bupivacaine exert anti-inflammatory effects on inflammation-reactive astrocytes

    Science.gov (United States)

    Block, Linda; Jörneberg, Per; Björklund, Ulrika; Westerlund, Anna; Biber, Björn; Hansson, Elisabeth

    2013-01-01

    Bupivacaine is a widely used, local anesthetic agent that blocks voltage-gated Na+ channels when used for neuro-axial blockades. Much lower concentrations of bupivacaine than in normal clinical use, bupivacaine exerts an influence on the Ca2+ signaling and interleukin-1β (IL-1β) secretion in inflammation-reactive astrocytes when used at ultralow concentrations, bupivacaine interacts with the opioid-, 5-hydroxytryptamine- (5-HT) and glutamate-receptor systems. With respect to the μ-opioid- and 5-HT-receptor systems, bupivacaine restored the inflammation-reactive astrocytes to their normal non-inflammatory levels. With respect to the glutamate-receptor system, bupivacaine, in combination with an ultralow concentration of the μ-opioid receptor antagonist naloxone and μ-opioid receptor agonists, restored the inflammation-reactive astrocytes to their normal non-inflammatory levels. Ultralow concentrations of bupivacaine attenuated the inflammation-induced upregulation of IL-1β secretion. The results indicate that bupivacaine interacts with the opioid-, 5-HT- and glutamate-receptor systems by affecting Ca2+ signaling and IL-1β release in inflammation-reactive astrocytes. These results suggest that bupivacaine may be used at ultralow concentrations as an anti-inflammatory drug, either alone or in combination with opioid agonists and ultralow concentrations of an opioid antagonist. PMID:24083665

  5. Advanced 65 nm CMOS devices fabricated using ultra-low energy plasma doping

    International Nuclear Information System (INIS)

    Walther, S.; Lenoble, D.; Lallement, F.; Grouillet, A.; Erokhin, Y.; Singh, V.; Testoni, A.

    2005-01-01

    For leading edge CMOS and DRAM technologies, plasma doping (PLAD) offers several unique advantages over conventional beamline implantation. For ultra-low energy source and drain extensions (SDE), source drain contact and high dose poly doping implants PLAD delivers 2-5x higher throughput compared to beamline implanters. In this work we demonstrate process performance and process integration benefits enabled by plasma doping for advanced 65 nm CMOS devices. Specifically, p + /n ultra-shallow junctions formed with BF 3 plasma doping have superior X j /R s characteristics to beamline implants and yield up to 30% lower R s for 20 nm X j while using standard spike anneal with ramp-up rate of 75 deg. C/s. These results indicate that PLAD could extend applicability of standard spike anneal by at least one technology node past 65 nm. A CMOS split lot has been run to investigate process integration advantages unique to plasma doping and to determine CMOS device characteristics. Device data measured on 65 nm transistors fabricated with offset spacers indicate that devices with SDE formed by plasma doping have superior V t roll-off characteristics arguably due to improved lateral gate-overlap of PLAD SDE junctions. Furthermore, offset spacers could be eliminated in 65 nm devices with PLAD SDE implants while still achieving V t roll-off and I on -I off performance at least equivalent to control devices with offset spacers and SDE formed by beamline implantation. Thus, another advantage of PLAD is simplified 65 nm CMOS manufacturing process flow due to elimination of offset spacers. Finally, we present process transfer from beamline implants to PLAD for several applications, including SDE and gate poly doping with very high productivity

  6. Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.

    Science.gov (United States)

    Van, Ngoc Huynh; Lee, Jae-Hyun; Whang, Dongmok; Kang, Dae Joon

    2016-06-09

    We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.

  7. Porous Silicon Covered with Silver Nanoparticles as Surface-Enhanced Raman Scattering (SERS) Substrate for Ultra-Low Concentration Detection.

    Science.gov (United States)

    Kosović, Marin; Balarin, Maja; Ivanda, Mile; Đerek, Vedran; Marciuš, Marijan; Ristić, Mira; Gamulin, Ozren

    2015-12-01

    Microporous and macro-mesoporous silicon templates for surface-enhanced Raman scattering (SERS) substrates were produced by anodization of low doped p-type silicon wafers. By immersion plating in AgNO3, the templates were covered with silver metallic film consisting of different silver nanostructures. Scanning electron microscopy (SEM) micrographs of these SERS substrates showed diverse morphology with significant difference in an average size and size distribution of silver nanoparticles. Ultraviolet-visible-near-infrared (UV-Vis-NIR) reflection spectroscopy showed plasmonic absorption at 398 and 469 nm, which is in accordance with the SEM findings. The activity of the SERS substrates was tested using rhodamine 6G (R6G) dye molecules and 514.5 nm laser excitation. Contrary to the microporous silicon template, the SERS substrate prepared from macro-mesoporous silicon template showed significantly broader size distribution of irregular silver nanoparticles as well as localized surface plasmon resonance closer to excitation laser wavelength. Such silver morphology has high SERS sensitivity that enables ultralow concentration detection of R6G dye molecules up to 10(-15) M. To our knowledge, this is the lowest concentration detected of R6G dye molecules on porous silicon-based SERS substrates, which might even indicate possible single molecule detection.

  8. Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals

    KAUST Repository

    Peng, Wei; Yin, Jun; Ho, Kang-Ting; Ouellette, Olivier; de Bastiani, Michele; Banavoth, Murali; El Tall, Omar; Shen, Chao; Miao, Xiaohe; Pan, Jun; Alarousu, Erkki; He, Jr-Hau; Ooi, Boon S.; Mohammed, Omar F.; Sargent, Edward H.; Bakr, Osman

    2017-01-01

    -processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4・(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders

  9. Improved performance of Ta2O5-x resistive switching memory by Gd-doping: Ultralow power operation, good data retention, and multilevel storage

    Science.gov (United States)

    Shi, K. X.; Xu, H. Y.; Wang, Z. Q.; Zhao, X. N.; Liu, W. Z.; Ma, J. G.; Liu, Y. C.

    2017-11-01

    Resistive-switching memory with ultralow-power consumption is very promising technology for next-generation data storage and high-energy-efficiency neurosynaptic chips. Herein, Ta2O5-x-based multilevel memories with ultralow-power consumption and good data retention were achieved by simple Gd-doping. The introduction of a Gd ion, as an oxygen trapper, not only suppresses the generation of oxygen vacancy defects and greatly increases the Ta2O5-x resistance but also increases the oxygen-ion migration barrier. As a result, the memory cells can operate at an ultralow current of 1 μA with the extrapolated retention time of >10 years at 85 °C and the high switching speeds of 10 ns/40 ns for SET/RESET processes. The energy consumption of the device is as low as 60 fJ/bit, which is comparable to emerging ultralow-energy consumption (memory devices.

  10. Detection of ultra-low oxygen concentration based on the fluorescence blinking dynamics of single molecules

    Science.gov (United States)

    Wu, Ruixiang; Chen, Ruiyun; Zhou, Haitao; Qin, Yaqiang; Zhang, Guofeng; Qin, Chengbing; Gao, Yan; Gao, Yajun; Xiao, Liantuan; Jia, Suotang

    2018-01-01

    We present a sensitive method for detection of ultra-low oxygen concentrations based on the fluorescence blinking dynamics of single molecules. The relationship between the oxygen concentration and the fraction of time spent in the off-state, stemming from the population and depopulation of triplet states and radical cationic states, can be fitted with a two-site quenching model in the Stern-Volmer plot. The oxygen sensitivity is up to 43.42 kPa-1 in the oxygen partial pressure region as low as 0.01-0.25 kPa, which is seven times higher than that of the fluorescence intensity indicator. This method avoids the limitation of the sharp and non-ignorable fluctuations that occur during the measurement of fluorescence intensity, providing potential applications in the field of low oxygen-concentration monitoring in life science and industry.

  11. Ultralow Self-Doping in 2D Hybrid Perovskite Single Crystals

    KAUST Repository

    Peng, Wei

    2017-06-28

    Unintentional self-doping in semiconductors through shallow defects is detrimental to optoelectronic device performance. It adversely affects junction properties and it introduces electronic noise. This is especially acute for solution-processed semiconductors, including hybrid perovskites, which are usually high in defects due to rapid crystallization. Here, we uncover extremely low self-doping concentrations in single crystals of (C6H5C2H4NH3)2PbI4・(CH3NH3PbI3)n-1 (n=1, 2, and 3)—over three orders of magnitude lower than those of typical three-dimensional hybrid perovskites—by analyzing their conductivity behavior. We propose that crystallization of hybrid perovskites containing large organic cations suppresses defect formation and thus favors a low self-doping level. To exemplify the benefits of this effect, we demonstrate extraordinarily high light-detectivity (1013 Jones) in (C6H5C2H4NH3)2PbI4・(CH3NH3PbI3)n-1 photoconductors due to the reduced electronic noise, which makes them particularly attractive for the detection of weak light signals. Furthermore, the low self-doping concentration reduces the equilibrium charge carrier concentration in (C6H5C2H4NH3)2PbI4・(CH3NH3PbI3)n-1, advantageous in the design of p-i-n heterojunction solar cells by optimizing band alignment and promoting carrier depletion in the intrinsic perovskite layer, thereby enhancing charge extraction.

  12. Using MOF-74 for Hg{sup 2+} removal from ultra-low concentration aqueous solution

    Energy Technology Data Exchange (ETDEWEB)

    Xiong, Yang Yang; Li, Jian Qiang; Gong, Le Le; Feng, Xue Feng; Meng, Li Na; Zhang, Le; Meng, Pan Pan; Luo, Ming Biao; Luo, Feng, E-mail: ecitluofeng@163.com

    2017-02-15

    Mercury (Hg{sup 2+}) ions have very high toxicity and widely spread as environmental pollutants. At present, many efforts have been taken to remove the hazardous materials of mercury(II) by adsorption, and it is highly desirable to develop a novel adsorbent with high adsorptive capacities. However it is still a big challenge to remove the ultra-low-concentration mercury ions from water. In this paper, MOF-74-Zn is explored for such function, showing high removal rate of Hg(II) from water without any pretreatment, especially for the ultra-trace Hg(II) ions in the ppb magnitude with the removal rate reaching to 54.48%, 69.71%, 72.26% when the initial concentration of Hg(II) is 20ppb, 40ppb, 50ppb, respectively. - Graphical abstract: The absorption of mercury ions on MOF-74-Zn is due to somewhat weak interactions between MOF skeleton that is composed of carboxylate and hydroxy group and Hg2+ ions. - Highlights: • MOF-74-Zn shows high removal rate of Hg(II) from water without any pretreatment. • The MOF-74-Zn has a notable performance at ultra-low concentration of Hg(II). • MOF-74-Zn shows the potential for Hg(II) removal from industrial waste water.

  13. Using MOF-74 for Hg2+ removal from ultra-low concentration aqueous solution

    International Nuclear Information System (INIS)

    Xiong, Yang Yang; Li, Jian Qiang; Gong, Le Le; Feng, Xue Feng; Meng, Li Na; Zhang, Le; Meng, Pan Pan; Luo, Ming Biao; Luo, Feng

    2017-01-01

    Mercury (Hg 2+ ) ions have very high toxicity and widely spread as environmental pollutants. At present, many efforts have been taken to remove the hazardous materials of mercury(II) by adsorption, and it is highly desirable to develop a novel adsorbent with high adsorptive capacities. However it is still a big challenge to remove the ultra-low-concentration mercury ions from water. In this paper, MOF-74-Zn is explored for such function, showing high removal rate of Hg(II) from water without any pretreatment, especially for the ultra-trace Hg(II) ions in the ppb magnitude with the removal rate reaching to 54.48%, 69.71%, 72.26% when the initial concentration of Hg(II) is 20ppb, 40ppb, 50ppb, respectively. - Graphical abstract: The absorption of mercury ions on MOF-74-Zn is due to somewhat weak interactions between MOF skeleton that is composed of carboxylate and hydroxy group and Hg2+ ions. - Highlights: • MOF-74-Zn shows high removal rate of Hg(II) from water without any pretreatment. • The MOF-74-Zn has a notable performance at ultra-low concentration of Hg(II). • MOF-74-Zn shows the potential for Hg(II) removal from industrial waste water.

  14. Stimulatory and protective effects of alkylating agents applied in ultra-low concentrations.

    Science.gov (United States)

    Pukhalsky, A L; Shmarina, G V

    2001-01-01

    Alkylating drugs belonging to the nitrogen mustard family are known as cytostatic and immunosuppressive agents. Ultra-low doses of these drugs may demonstrate pharmacological effects unlike this category of drugs. In the case of a gradual dose decrease, the number of targets for alkylation is also reduced and the drug switches from cytostatic to cell growth modifier. We postulate that application of ultra-low doses of alkylating drugs may result in a beneficial effect in the therapy of diseases associated with chronic inflammation of the mucosa, especially with the signs of epithelial atrophy. Copyright 2001 S. Karger AG, Basel

  15. Concentration quenching in Nd-doped glasses

    International Nuclear Information System (INIS)

    Stokowski, S.E.; Cook, L.; Mueller, H.; Weber, M.J.

    1984-01-01

    Fluorescence from trivalent Nd in solids is unfortunately quenched by interactions between Nd ions. Thus, laser materials with high Nd concentrations have reduced efficiencies because of this self-quenching, also known as concentration quenching. Nd self-quenching in different crystals and glasses varies considerably. We are therefore investigating this effect in a large number of materials in an effort to: (1) find those materials with long Nd fluorescent lifetimes at high Nd concentrations; and (2) elucidate the basic mechanisms of quenching and how the material structure controls its magnitude. We have concentrated on Nd-doped glasses because they provide a rich variety of structures, albeit complicated by Nd site inhomogeneities, and are easily and quickly made

  16. Ultralow contact resistance at an epitaxial metal/oxide heterojunction through interstitial site doping.

    Science.gov (United States)

    Chambers, Scott A; Gu, Meng; Sushko, Peter V; Yang, Hao; Wang, Chongmin; Browning, Nigel D

    2013-08-07

    Heteroepitaxial growth of Cr metal on Nb-doped SrTiO₃(001) is accompanied by Cr diffusion to interstitial sites within the first few atomic planes, an anchoring of the Cr film to the substrate, charge transfer from Cr to Ti, and metallization of the near-surface region, as depicted in the figure. The contact resistance of the resulting interface is exceedingly low. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Pro-inflammatory responses of RAW264.7 macrophages when treated with ultralow concentrations of silver, titanium dioxide, and zinc oxide nanoparticles

    International Nuclear Information System (INIS)

    Giovanni, Marcella; Yue, Junqi; Zhang, Lifeng; Xie, Jianping; Ong, Choon Nam; Leong, David Tai

    2015-01-01

    Highlights: • Ultralow levels of common nanoparticles exist in environment and consumer products. • Common nanoparticles at ultralow levels induce mild pro-inflammation by macrophages. • The nanoparticles are cytotoxic only at high doses. - Abstract: To cellular systems, nanoparticles are considered as foreign particles. Upon particles and cells contact, innate immune system responds by activating the inflammatory pathway. However, excessive inflammation had been linked to various diseases ranging from allergic responses to cancer. Common nanoparticles, namely silver, titanium dioxide, and zinc oxide exist in the environment as well as in consumer products at ultralow level of 10 −6 –10 −3 μg mL −1 . However, so far the risks of such low NPs concentrations remain unexplored. Therefore, we attempted to screen the pro-inflammatory responses after ultralow concentration treatments of the three nanoparticles on RAW264.7 macrophages, which are a part of the immune system, at both cellular and gene levels. Even though cytotoxicity was only observed at nanoparticles concentrations as high as 10 μg mL −1 , through the level of NF-κB and upregulation of pro-inflammatory genes, we observed activation of the induction of genes encoding pro-inflammatory cytokines starting already at 10 −7 μg mL −1 . This calls for more thorough characterization of nanoparticles in the environment as well as in consumer products to ascertain the health and safety of the consumers and living systems in general

  18. In-situ sulfuration synthesis of sandwiched spherical tin sulfide/sulfur-doped graphene composite with ultra-low sulfur content

    Science.gov (United States)

    Zhao, Bing; Yang, Yaqing; Wang, Zhixuan; Huang, Shoushuang; Wang, Yanyan; Wang, Shanshan; Chen, Zhiwen; Jiang, Yong

    2018-02-01

    SnS is widely studied as anode materials since of its superior structural stability and physicochemical property comparing with other Sn-based composites. Nevertheless, the inconvenience of phase morphology control and excessive consumption of sulfur sources during synthesis hinder the scalable application of SnS nanocomposites. Herein, we report a facile in-situ sulfuration strategy to synthesize sandwiched spherical SnS/sulfur-doped graphene (SnS/S-SG) composite. An ultra-low sulfur content with approximately stoichiometric ratio of Sn:S can effectively promote the sulfuration reaction of SnO2 to SnS and simultaneous sulfur-doping of graphene. The as-prepared SnS/S-SG composite shows a three-dimensional interconnected spherical structure as a whole, in which SnS nanoparticles are sandwiched between the multilayers of graphene sheets forming a hollow sphere. The sandwiched sphere structure and high S doping amount can improve the binding force between SnS and graphene, as well as the structural stability and electrical conductivity of the composite. Thus, a high reversibility of conversion reaction, promising specific capacity (772 mAh g-1 after 100 cycles at 0.1 C) and excellent rate performance (705 and 411 mAh g-1 at 1 C and 10 C, respectively) are exhibited in the SnS/S-SG electrode, which are much higher than that of the SnS/spherical graphene synthesized by traditional post-sulfuration method.

  19. Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

    Energy Technology Data Exchange (ETDEWEB)

    Jiang Baojiang [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Tian Chungui; Wang Lei; Sun Li; Chen Chen; Nong Xiaozhen [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China); Qiao Yingjie, E-mail: qiaoyingjie@hrbeu.edu.cn [College of Materials Science and Chemical Engineering, Harbin Engineering University, Harbin (China); Fu Honggang, E-mail: fuhg@vip.sina.com [Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education of the People' s Republic of China, Heilongjiang University, Harbin (China)

    2012-02-01

    In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 Degree-Sign C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

  20. Highly concentrated, stable nitrogen-doped graphene for supercapacitors: Simultaneous doping and reduction

    Science.gov (United States)

    Jiang, Baojiang; Tian, Chungui; Wang, Lei; Sun, Li; Chen, Chen; Nong, Xiaozhen; Qiao, Yingjie; Fu, Honggang

    2012-02-01

    In this work, we developed a concentrated ammonia-assisted hydrothermal method to obtain N-doped graphene sheets by simultaneous N-doping and reduction of graphene oxide (GO) sheets. The effects of hydrothermal temperature on the surface chemistry and the structure of N-doped graphene sheets were also investigated. X-ray photoelectron spectroscopy (XPS) study of N-doped graphene reveals that the highest doping level of 7.2% N is achieved at 180 °C for 12 h. N binding configurations of sample consist of pyridine N, quaternary N, and pyridine-N oxides. N doping is accompanied by the reduction of GO with decreases in oxygen levels from 34.8% in GO down to 8.5% in that of N-doped graphene. Meanwhile, the sample exhibits excellent N-doped thermal stability. Electrical measurements demonstrate that products have higher capacitive performance than that of pure graphene, the maximum specific capacitance of 144.6 F/g can be obtained which ascribe the pseudocapacitive effect from the N-doping. The samples also show excellent long-term cycle stability of capacitive performance.

  1. Pro-inflammatory responses of RAW264.7 macrophages when treated with ultralow concentrations of silver, titanium dioxide, and zinc oxide nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Giovanni, Marcella [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117585 (Singapore); Yue, Junqi; Zhang, Lifeng [PUB, 40 Scotts Road, Singapore 228231 (Singapore); Xie, Jianping [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117585 (Singapore); Ong, Choon Nam [Saw Swee Hock School of Public Health, National University of Singapore, 12 Science Drive 2, Singapore 117549 (Singapore); NUS Environmental Research Institute, National University of Singapore, 5A Engineering Drive 1, Singapore 117411 (Singapore); Leong, David Tai, E-mail: cheltwd@nus.edu.sg [Department of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, Singapore 117585 (Singapore)

    2015-10-30

    Highlights: • Ultralow levels of common nanoparticles exist in environment and consumer products. • Common nanoparticles at ultralow levels induce mild pro-inflammation by macrophages. • The nanoparticles are cytotoxic only at high doses. - Abstract: To cellular systems, nanoparticles are considered as foreign particles. Upon particles and cells contact, innate immune system responds by activating the inflammatory pathway. However, excessive inflammation had been linked to various diseases ranging from allergic responses to cancer. Common nanoparticles, namely silver, titanium dioxide, and zinc oxide exist in the environment as well as in consumer products at ultralow level of 10{sup −6}–10{sup −3} μg mL{sup −1}. However, so far the risks of such low NPs concentrations remain unexplored. Therefore, we attempted to screen the pro-inflammatory responses after ultralow concentration treatments of the three nanoparticles on RAW264.7 macrophages, which are a part of the immune system, at both cellular and gene levels. Even though cytotoxicity was only observed at nanoparticles concentrations as high as 10 μg mL{sup −1}, through the level of NF-κB and upregulation of pro-inflammatory genes, we observed activation of the induction of genes encoding pro-inflammatory cytokines starting already at 10{sup −7} μg mL{sup −1}. This calls for more thorough characterization of nanoparticles in the environment as well as in consumer products to ascertain the health and safety of the consumers and living systems in general.

  2. Ultra-low temperature process by ion shower doping technique for poly-Si TFTs on plastics

    International Nuclear Information System (INIS)

    Kim, Jong-Man; Lim, Huck; Kim, Do-Young; Jung, Ji-Sim; Kwon, Jang-Yeon; Hong, Wan-Shick; Noguchi, Takashi

    2006-01-01

    An ion doping process was performed by using a basic ion shower system. After ion doping and subsequent activation of the dopants in the Si film by excimer laser annealing (ELA), we studied the crystallinity of the Si surface using UV-reflectance spectroscopy and the sheet resistance by using 4-point probe measurements. To prevent excessive temperature increase on the plastic substrate during ion shower doping, the plasma shower was applied in a series of short pulses. As a result, dopant ions were efficiently incorporated and were activated into the a-Si film on plastic substrate after ELA. The sheet resistance decreased with increase of actual doping time, which corresponds to the incorporated dose. Also, we confirmed a distinct relationship between the crystallinity and the sheet resistance. This work shows that pulsed ion shower doping is a promising technique for ultra-low-temperature poly-Si TFTs on plastic substrates.

  3. Photoinduced nucleation: A novel tool for detecting molecules in air at ultra-low concentrations

    International Nuclear Information System (INIS)

    Katz, Joseph L.; Lihavainen, Heikki; Rudek, Markus M.; Salter, Brian C.

    2000-01-01

    This paper describes the development of a novel detection method and the demonstration of its capability to detect substances at concentrations as small as a few parts per trillion. It is shown that photoinduced nucleation is not in itself a nucleation process; rather, supersaturated vapor condenses onto long-lasting clusters formed by chemical reaction of photo-excited molecules. The role of the supersaturated vapor is to increase the size of these photoproducts by condensation to a size readily detectable by light scattering. Furthermore, the measured nucleation rate variation with illumination wavelength exactly matches the substance's vapor-phase UV light absorption wavelength dependence, thus providing species identification. The ability to detect and identify molecules of substances at extremely low concentrations from ambient air is useful for detecting and monitoring pollutants, and for detecting explosives such as TNT. (c) 2000 American Institute of Physics

  4. Adsorption of ultra-low concentration malodorous substances using coal-derived granular activated carbons

    Energy Technology Data Exchange (ETDEWEB)

    Urano, K.; Maeda, T.; Yamashita, H.; Hagio, S.; Arioka, A.

    1986-01-01

    The experimental adsorption is reported of diosmin and 2-methylisoborneol using two types of coal-derived granular activated carbon and one derived from coconut husk. It was discovered that carbons with more pores below 15 angstroms in size gave a higher equilibrium adsorption of malodorous substances at mg/l concentrations. It was also found that the coal-derived materials, which contained more pores larger than 15 angstroms, gave faster adsorption. Given that the coal-derived carbons have a longer service life, it is concluded that they are suitable for use in full-scale adsorption plant where contact times are short. 3 references, 5 figures, 5 tables.

  5. Ultra-low p-doping of poly(3-hexylthiophene) and its impact on polymer aggregation and photovoltaic performance

    KAUST Repository

    Said, Marcel M.

    2016-04-25

    Poly(3-hexylthiophene) (P3HT) films and P3HT / fullerene photovoltaic cells have been p-doped with very low levels (< 1 wt. %) of molybdenum tris[1-(trifluoromethylcarbonyl)- 2-(trifluoromethyl)-ethane-1,2-dithiolene]. The dopants are inhomogenously distributed within doped P3HT films, both laterally and as a function of depth, and appear to aggregate in some instances. Doping also results in subtle changes in the local and long range order of the P3HT film. These effects likely contribute to the complexity of the observed evolutions in conductivity, mobility and work function with doping levels. They also negatively affect the open-circuit voltage and fill factor of solar cells in unexpected ways, indicating that dopant aggregation and non-uniform distribution can harm device performance.

  6. Ultra-low p-doping of poly(3-hexylthiophene) and its impact on polymer aggregation and photovoltaic performance

    KAUST Repository

    Said, Marcel M.; Zhang, Yadong; Dasari, Raghunath R.; Anjum, Dalaver H.; Munir, Rahim; Hu, Hanlin; Amassian, Aram; Barlow, Stephen; Marder, Seth R.

    2016-01-01

    Poly(3-hexylthiophene) (P3HT) films and P3HT / fullerene photovoltaic cells have been p-doped with very low levels (< 1 wt. %) of molybdenum tris[1-(trifluoromethylcarbonyl)- 2-(trifluoromethyl)-ethane-1,2-dithiolene]. The dopants are inhomogenously distributed within doped P3HT films, both laterally and as a function of depth, and appear to aggregate in some instances. Doping also results in subtle changes in the local and long range order of the P3HT film. These effects likely contribute to the complexity of the observed evolutions in conductivity, mobility and work function with doping levels. They also negatively affect the open-circuit voltage and fill factor of solar cells in unexpected ways, indicating that dopant aggregation and non-uniform distribution can harm device performance.

  7. A laser-based FAIMS detector for detection of ultra-low concentrations of explosives

    Science.gov (United States)

    Akmalov, Artem E.; Chistyakov, Alexander A.; Kotkovskii, Gennadii E.; Sychev, Alexey V.; Tugaenko, Anton V.; Bogdanov, Artem S.; Perederiy, Anatoly N.; Spitsyn, Eugene M.

    2014-06-01

    A non-contact method for analyzing of explosives traces from surfaces was developed. The method is based on the laser desorption of analyzed molecules from the surveyed surfaces followed by the laser ionization of air sample combined with the field asymmetric ion mobility spectrometry (FAIMS). The pulsed radiation of the fourth harmonic of a portable GSGG: Cr3+ :Nd3+ laser (λ = 266 nm) is used. The laser desorption FAIMS analyzer have been developed. The detection limit of the analyzer equals 40 pg for TNT. The results of detection of trinitrotoluene (TNT), cyclotrimethylenetrinitramine (RDX) and cyclotetramethylenetetranitramine (HMX) are presented. It is shown that laser desorption of nitro-compounds from metals is accompanied by their surface decomposition. A method for detecting and analyzing of small concentrations of explosives in air based on the laser ionization and the FAIMS was developed. The method includes a highly efficient multipass optical scheme of the intracavity fourthharmonic generation of pulsed laser radiation (λ = 266 nm) and the field asymmetric ion mobility (FAIM) spectrometer disposed within a resonator. The ions formation and detection proceed inside a resonant cavity. The laser ion source based on the multi-passage of radiation at λ = 266 nm through the ionization region was elaborated. On the basis of the method the laser FAIMS analyzer has been created. The analyzer provides efficient detection of low concentrations of nitro-compounds in air and shows a detection limit of 10-14 - 10-15 g/cm3 both for RDX and TNT.

  8. Effects of Zn doping concentration on resistive switching ...

    Indian Academy of Sciences (India)

    conduction mechanism at low resistance state varies with Zn doping concentration. The dominant .... shows the evolution of RHRS and RLRS in 1000 cycles under a reading voltage of 2 V ... 0.5 exhibited poor fatigue properties. As shown in ...

  9. Zero-reabsorption doped-nanocrystal luminescent solar concentrators.

    Science.gov (United States)

    Erickson, Christian S; Bradshaw, Liam R; McDowall, Stephen; Gilbertson, John D; Gamelin, Daniel R; Patrick, David L

    2014-04-22

    Optical concentration can lower the cost of solar energy conversion by reducing photovoltaic cell area and increasing photovoltaic efficiency. Luminescent solar concentrators offer an attractive approach to combined spectral and spatial concentration of both specular and diffuse light without tracking, but they have been plagued by luminophore self-absorption losses when employed on practical size scales. Here, we introduce doped semiconductor nanocrystals as a new class of phosphors for use in luminescent solar concentrators. In proof-of-concept experiments, visibly transparent, ultraviolet-selective luminescent solar concentrators have been prepared using colloidal Mn(2+)-doped ZnSe nanocrystals that show no luminescence reabsorption. Optical quantum efficiencies of 37% are measured, yielding a maximum projected energy concentration of ∼6× and flux gain for a-Si photovoltaics of 15.6 in the large-area limit, for the first time bounded not by luminophore self-absorption but by the transparency of the waveguide itself. Future directions in the use of colloidal doped nanocrystals as robust, processable spectrum-shifting phosphors for luminescent solar concentration on the large scales required for practical application of this technology are discussed.

  10. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    International Nuclear Information System (INIS)

    Nasir, M. F.; Zainol, M. N.; Hannas, M.; Mamat, M. H.; Rusop, Mohamad; Rahman, S. A.

    2016-01-01

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10"3 Ωcm"−"1. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  11. Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M. H., E-mail: mhmamat@salam.uitm.edu.my; Rusop, Mohamad, E-mail: rusop@salam.uitm.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia); Rahman, S. A., E-mail: saadah@um.edu.my [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Low Dimensional Materials Research Centre, Physics Department, Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2016-07-06

    This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.

  12. The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT).

    Science.gov (United States)

    Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

    2016-11-22

    The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La 3+ donor-doped, Fe 3+ acceptor-doped and La 3+ /Fe 3+ -co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

  13. The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT

    Directory of Open Access Journals (Sweden)

    Christoph Slouka

    2016-11-01

    Full Text Available The different properties of acceptor-doped (hard and donor-doped (soft lead zirconate titanate (PZT ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

  14. Concentration effect of Ca2+ co-doping on Eu3+ doped YPO4 host nanoparticles

    International Nuclear Information System (INIS)

    Yaiphaba, N.; Phaomei, G.; Singh, N.R.

    2013-01-01

    YPO 4 doped Eu nanoparticles have been synthesized by ethylene glycol route at low temperature of 120 ℃. The host is co-doped with different concentration of Ca 2+ (Ca 2+ =0, 2, 3, 10 at.%). The samples were characterized by X-ray powder diffraction (XRD) and photoluminescence spectroscopy. XRD results show that the samples have only single tetragonal structure. Fig. 1 shows the expanded region of (hkl = 200) peak of all the samples in the range 25 to 27 ℃ in 2θ on the same day. The (200) peak position is shifted to higher 2θ from 25.8℃ to 26.2℃ when the concentration of Ca +2 increases upto 10 at.%. The crystallite size also decreases from 32 nm to 20 nm with increase in the concentration of Ca 2+ indicating decrease in the crystallinity of the prepared samples. Photoluminescence excitation spectra results show that the phosphor can be efficiently excited by ultra violet light from 250 to 400 nm including three peaks at 230, 255, and 394 nm. Emission spectra of Ca x Eu 0.05 Y 0.95-x PO 4 (x=0, 0.01, 0.03, 0.10) at 230 nm excitation shows that the intensity of the peak increases upto 1 atom % of Ca (x=0.01) and then decreases due to concentration quenching. These nanoparticles are found to be re-dispersible in water and ethanol and are incorporated into polyvinyl alcohol film homogeneously. This film showed bright red emission. (author)

  15. The doping concentration and physical properties measurement of silicon water using tera hertz wave

    International Nuclear Information System (INIS)

    Park, Sung Hyeon; Oh, Gyung Hwan; Kim, Hak Sung

    2017-01-01

    In this study, a tera hertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30° were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 10"1"4 to 10"1"8 in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer

  16. The doping concentration and physical properties measurement of silicon water using tera hertz wave

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sung Hyeon; Oh, Gyung Hwan; Kim, Hak Sung [Dept. of Mechanical Convergence Engineering, Hanyang University, Seoul(Korea, Republic of)

    2017-02-15

    In this study, a tera hertz time domain spectroscopy (THz-TDS) imaging technique was used to measure doping concentration and physical properties (such as refractive index and permittivity) of the doped silicon (Si) wafers. The transmission and reflection modes with an incidence angle of 30° were employed to determine the physical properties of the doped Si wafers. The doping concentrations of the prepared Si wafers were varied from 10{sup 14} to 10{sup 18} in both N-type and P-type cases. Finally, the correlation between the doping concentration and the power of the THz wave was determined by measuring the powers of the transmitted and reflected THz waves of the doped Si wafers. Additionally, the doped thickness, the refractive index, and permittivity of each doped Si wafer were calculated using the THz time domain waveform. The results indicate that the THz-TDS imaging technique is potentially a promising technique to measure the doping concentration as well as other optical properties (such as the refractive index and permittivity) of the doped Si wafer.

  17. The effect of DCJTB doping concentration in PVK on the chromatic coordinate of electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, F J; Xu, Z; Zhao, S L; Wang, L W; Yuan, G C [Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education (China); Zhao, D W [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)], E-mail: fjzhang@bjtu.edu.cn

    2008-05-15

    The dominant mechanism of electroluminescence (EL) from 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) doped in poly-(N-vinyl-carbazole) (PVK) system was demonstrated to be a charge carrier trapped by DCJTB molecular rather than Foerster energy transfer from PVK to DCJTB. The chromatically coordinate EL emission of PVK:DCJTB changes from (0.41, 0.31) to (0.67, 0.31) with an increase in DCJTB doping concentration. The emission peak in DCJTB shows red-shift and the shoulder emission peak at 656 nm becomes stronger as the doping concentration increases. The effect of DCJTB doping concentration on EL spectra is attributed to strong dipole-dipole interaction between the DCJTB molecule with an increase in doping concentration.

  18. Suppression of concentration quenching of Er-related luminescence in Er-doped GaN

    International Nuclear Information System (INIS)

    Chen Shaoqiang; Tomita, Shigeo; Kudo, Hiroshi; Akimoto, Katsuhiro; Dierre, Benjamin; Lee, Woong; Sekiguchi, Takashi

    2010-01-01

    Erbium-doped GaN with different doping concentrations were grown by ammonia-source molecular beam epitaxy. The intra-4f-shell transitions related green luminescence were observed by both photoluminescence (PL) and cathodoluminescence (CL) measurements. It was found that concentration quenching of Er-related luminescence was observed in PL measurements while not in CL measurements. The different excitation and relaxation processes are suggested as the cause of the concentration quenching characteristics between PL and CL. The strong Er-related CL intensity in highly doped GaN demonstrates that high energy excitation is a promising approach to suppress the concentration quenching in Er-doped GaN.

  19. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-01

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  20. High-concentration boron doping of graphene nanoplatelets by simple thermal annealing and their supercapacitive properties.

    Science.gov (United States)

    Yeom, Da-Young; Jeon, Woojin; Tu, Nguyen Dien Kha; Yeo, So Young; Lee, Sang-Soo; Sung, Bong June; Chang, Hyejung; Lim, Jung Ah; Kim, Heesuk

    2015-05-05

    For the utilization of graphene in various energy storage and conversion applications, it must be synthesized in bulk with reliable and controllable electrical properties. Although nitrogen-doped graphene shows a high doping efficiency, its electrical properties can be easily affected by oxygen and water impurities from the environment. We here report that boron-doped graphene nanoplatelets with desirable electrical properties can be prepared by the simultaneous reduction and boron-doping of graphene oxide (GO) at a high annealing temperature. B-doped graphene nanoplatelets prepared at 1000 °C show a maximum boron concentration of 6.04 ± 1.44 at %, which is the highest value among B-doped graphenes prepared using various methods. With well-mixed GO and g-B2O3 as the dopant, highly uniform doping is achieved for potentially gram-scale production. In addition, as a proof-of-concept, highly B-doped graphene nanoplatelets were used as an electrode of an electrochemical double-layer capacitor (EDLC) and showed an excellent specific capacitance value of 448 F/g in an aqueous electrolyte without additional conductive additives. We believe that B-doped graphene nanoplatelets can also be used in other applications such as electrocatalyst and nano-electronics because of their reliable and controllable electrical properties regardless of the outer environment.

  1. Effect of iron doping concentration on magnetic properties of ZnO nanoparticles

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.; Layek, Samar; Verma, H.C.

    2009-01-01

    The ZnO:Fe nanoparticles of mean size 3-10 nm were synthesized at room temperature by simple co-precipitation method. The crystallite structure, morphology and size estimation were performed by X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM). The wurtzite structure of ZnO gradually degrades with the increasing Fe doping concentration. The magnetic behavior of the nanoparticles of ZnO with varying Fe doping concentration was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong ferromagnetic behavior, however at higher doping percentage of Fe, the ferromagnetic behavior was suppressed and paramagnetic nature was observed. The enhanced antiferromagnetic interaction between neighboring Fe-Fe ions suppressed the ferromagnetism at higher doping concentrations of Fe. Room-temperature Moessbauer spectroscopy investigation showed Fe 3+ nature of the iron atom in ZnO matrix.

  2. The influence of bias magnetization of nanoparticles on GMR sensor signal and sensitivity for the ultra-low concentration detection

    Science.gov (United States)

    Zhang, Yang; Xu, Jie; Cao, Derang; Li, Qiang; Zhao, Guoxia; Sun, Nian X.; Li, Shandong

    2018-05-01

    In the broad research of the GMR bio-sensing technology, it is vital to explore appropriate magnetic labels and its influences on the detection signal. In this work, four kinds of ferrite particles of γ-Fe2O3, CoFe2O4, NiFe2O4 and NiZnFe2O4 were prepared through calcining the Dimethyl Formamide (DMF) solution of the transition metal nitrates [Fe(NO3)3 and X(NO3)2, X = Co, Ni, Zn] to study the effect of magnetic properties on detection signals using a DC in-plane measuring method. It was revealed that for four particles, the output voltage differences |ΔV| between with and without magnetic particles exhibit log-linear functions of the particles concentrations x in the range from 0.1 to 10 ng/mL. A very low limitation of detection (LOD) of 0.1 ng/mL for all the samples was obtained, which is two orders smaller than that in the previous work. Moreover, the change of output voltage difference at the LOD (|ΔVlim|) is proportional to the magnetization at bias field (bias magnetization, Mbias), which indicates that larger Mbias leads to a lower LOD. This work provides a useful guidance in selecting or preparing magnetic labels to enhance the sensitivity of GMR biosensors.

  3. Enhancement of thermoelectric properties of Mg2Si compounds with Bi doping through carrier concentration tuning

    Science.gov (United States)

    Lee, Ji Eun; Cho, Sang-Hum; Oh, Min-Wook; Ryu, Byungi; Joo, Sung-Jae; Kim, Bong-Seo; Min, Bok-Ki; Lee, Hee-Woong; Park, Su-Dong

    2014-07-01

    The Bi-doped Mg2Si powder was fabricated with solid state reaction method and consolidated with hot pressing method and then its thermoelectric properties were investigated. The n-type transport properties were measured in all samples and temperature dependence of the electrical properties shows a behavior of degenerate semiconductors for Bi-doped samples. The electrical resistivity and the Seebeck coefficient were greatly reduced with Bi, which was mainly due to the increment of the carrier concentration. The samples have maximum carrier concentration of 8.2 × 1018 cm-3. The largest ZT value of 0.61 was achieve at 873 K for Mg2.04SiBi0.02. The Bi-doping was found to be an effective n-type dopant to adjust carrier concentration. [Figure not available: see fulltext.

  4. Frustrated incomplete donor ionization in ultra-low resistivity germanium films

    International Nuclear Information System (INIS)

    Xu, Chi; Menéndez, J.; Senaratne, C. L.; Kouvetakis, J.

    2014-01-01

    The relationship between carrier concentration and donor atomic concentration has been determined in n-type Ge films doped with P. The samples were carefully engineered to minimize non-active dopant incorporation by using specially designed P(SiH 3 ) 3 and P(GeH 3 ) 3 hydride precursors. The in situ nature of the doping and the growth at low temperatures, facilitated by the Ge 3 H 8 and Ge 4 H 10 Ge sources, promote the creation of ultra-low resistivity films with flat doping profiles that help reduce the errors in the concentration measurements. The results show that Ge deviates strongly from the incomplete ionization expected when the donor atomic concentration exceeds N d  = 10 17  cm −3 , at which the energy separation between the donor and Fermi levels ceases to be much larger than the thermal energy. Instead, essentially full ionization is seen even at the highest doping levels beyond the solubility limit of P in Ge. The results can be explained using a model developed for silicon by Altermatt and coworkers, provided the relevant model parameter is properly scaled. The findings confirm that donor solubility and/or defect formation, not incomplete ionization, are the major factors limiting the achievement of very high carrier concentrations in n-type Ge. The commercially viable chemistry approach applied here enables fabrication of supersaturated and fully ionized prototypes with potential for broad applications in group-IV semiconductor technologies

  5. Optimum Er concentration for in situ doped GaN visible and infrared luminescence

    International Nuclear Information System (INIS)

    Lee, D. S.; Heikenfeld, J.; Steckl, A. J.; Hommerich, U.; Seo, J. T.; Braud, A.; Zavada, J.

    2001-01-01

    GaN thin films have been doped with varying Er concentrations (0.01--10 at.%) during molecular-beam-epitaxy growth. As expected, the visible and infrared (IR) emissions, from photoluminescence (PL) and electroluminescence (EL), are a strong function of Er concentration. We report on the determination of an optimum Er doping level for PL and EL intensity. Secondary ion mass spectroscopy and Rutherford backscattering measurements showed that the Er concentration in GaN increased exponentially with Er cell temperature. PL and EL intensity of green emission at 537 and 558 nm, due to Er 4f--4f inner shell transitions, exhibited a maximum at ∼1 at.% Er. IR PL intensity at 1.54 μm, due to another Er transition, revealed the same maximum for ∼1 at.% Er concentration. PL lifetime measurements at 537 nm showed that samples with Er concentration <1 at.% had a lifetime of ∼5 μs. For Er concentration ≥1 at.%, the lifetime decreased rapidly to values below 1 μs. This concentration quenching is believed to be due to a combination of Er cross relaxation and energy transfer to GaN defects, eventually followed by precipitation. This conclusion is supported by x-ray diffraction measurements. As a result, we have determined that the optimum Er doping concentration into GaN is ∼1 at.%. Copyright 2001 American Institute of Physics

  6. Influence of Ag doping concentration on structural and optical properties of CdS thin film

    International Nuclear Information System (INIS)

    Kumar, Pragati; Saxena, Nupur; Gupta, Vinay; Agarwal, Avinash

    2015-01-01

    This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag 2 O or Ag 2 S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration

  7. Effect of dye-doped concentration on the charge carrier recombination in molecularly doped organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Chen Jiangshan; Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Changchun 130022 (China)

    2006-05-21

    The effect of the concentration of 4-(dicyanomethylene)-2-t-butyl-6- (1, 1, 7, 7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant in tris(8-hydroxyquinoline) aluminium (Alq{sub 3}) on the charge carrier recombination was studied by transient electroluminescence (EL). The electron-hole recombination coefficient ({gamma}) was determined from the long-time component of the temporal decay of the EL intensity after a rectangular voltage pulse was turned off. It was found that the coefficient monotonically decreased with an increase in the DCJTB-doping concentration. The monotonic decrease is attributed to concentration quenching on the excitons and coincided well with the reduction of the EL efficiency.

  8. Concentration depolarization of luminescence of Eu3+-doped glasses

    International Nuclear Information System (INIS)

    Bodunov, E.N.; Lebedev, V.P.; Malyshev, V.A.; Przheuskij, A.K.

    1989-01-01

    Experimental study of concentrational depolarization luminescence (CDL) of phosphate and germanate glasses, containing Eu 3+ ions, has been carried out. On the basis of three-body self-consistent approximation the theory of CDL is conceived, which takes into account Eu-Eu interaction of higher multipolarities. By comparing the theory with the experiment energy transfer radii for Eu-Eu dipole-dipole, dipole-quadrupole and quadrupole-quadrupole interactions are determined. The attempt to discriminate Eu-Eu interaction types in the studied range of Eu 3+ ion concentration change has failed owing to law accuracy of luminescence emittance anisotropy measurement

  9. The effects of Tb 3+ doping concentration on luminescence ...

    Indian Academy of Sciences (India)

    BaF2 phosphor; crystal structure; luminescence properties; X-ray diffraction; concentration quenching. 1. Introduction ... reported that the particle size, shape, crystallinity, etc., sig- nificantly ... Figure 3 shows the excitation and emission spectra of sam- ple with 4 ... gies obtained earlier.9,10 The ground term of the Tb3+ ion is.

  10. Diffusion of ion-implanted B in high concentration P- and As-doped silicon

    International Nuclear Information System (INIS)

    Fair, R.B.; Pappas, P.N.

    1975-01-01

    The diffusion of ion-implanted B in Si in the presence of a uniform background of high concentration P or As was studied by correlating numerical profile calculations with profiles determined by secondary-ion mass spectrometry (SIMS). Retarded B diffusion is observed in both As- and P-doped Si, consistent with the effect of the local Fermi-level position in the Si band gap on B diffusivity, D/sub B/. It is shown that D/sub B/ is linearly dependent on the free hole concentration, p, over the range 0.1 less than p/n/sub ie/ less than 30, where n/sub ie/ is the effective intrinsic electron concentration. This result does not depend on the way in which the background dopant has been introduced (implantation predeposition or doped-oxide source), nor the type of dopant used (P or As). (U.S.)

  11. Mg concentration profile and its control in the low temperature grown Mg-doped GaN epilayer

    Science.gov (United States)

    Liu, S. T.; Yang, J.; Zhao, D. G.; Jiang, D. S.; Liang, F.; Chen, P.; Zhu, J. J.; Liu, Z. S.; Liu, W.; Xing, Y.; Zhang, L. Q.; Wang, W. J.; Li, M.; Zhang, Y. T.; Du, G. T.

    2018-01-01

    In this work, the Cp2Mg flux and growth pressure influence to Mg doping concentration and depth profiles is studied. From the SIMS measurement we found that a transition layer exists at the bottom region of the layer in which the Mg doping concentration changes gradually. The thickness of transition layer decreases with the increases of Mg doping concentration. Through analysis, we found that this is caused by Ga memory effect which the Ga atoms stay residual in MOCVD system will react with Mg source, leading a transition layer formation and improve the growth rate. And the Ga memory effect can be well suppressed by increasing Mg doping concentration and growth pressure and thus get a steep Mg doping at the bottom region of p type layer.

  12. Influences of Pr and Ta doping concentration on the characteristic features of FTO thin film deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Turgut, Güven; Koçyiğit, Adem; Sönmez, Erdal

    2015-01-01

    The Pr and Ta separately doped FTO (10 at.% F incorporated SnO 2 ) films are fabricated via spray pyrolysis. The microstructural, topographic, optical, and electrical features of fluorine-doped TO (FTO) films are investigated as functions of Pr and Ta dopant concentrations. The x-ray diffraction (XRD) measurements reveal that all deposited films show polycrystalline tin oxide crystal property. FTO film has (200) preferential orientation, but this orientation changes to (211) direction with Pr and Ta doping ratio increasing. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) analyses show that all films have uniform and homogenous nanoparticle distributions. Furthermore, morphologies of the films depend on the ratio between Pr and Ta dopants. From ultraviolet-visible (UV-Vis) spectrophotometer measurements, it is shown that the transmittance value of FTO film decreases with Pr and Ta doping elements increasing. The band gap value of FTO film increases only at 1 at.% Ta doping level, it drops off with Pr and Ta doping ratio increasing at other doped FTO films. The electrical measurements indicate that the sheet resistance value of FTO film initially decreases with Pr and Ta doping ratio decreasing and then it increases with Pr and Ta doping ratio increasing. The highest value of figure of merit is obtained for 1 at.% Ta- and Pr-doped FTO film. These results suggest that Pr- and Ta-doped FTO films may be appealing candidates for TCO applications. (paper)

  13. Electrochemical characterization of doped diamond-coated carbon fibers at different boron concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Almeida, E.C. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil)]. E-mail: erica@las.inpe.br; Diniz, A.V. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Trava-Airoldi, V.J. [INPE, CP 515, Sao Jose dos Campos, SP 12201-970 (Brazil); Ferreira, N.G. [CTA-Divisao de Materiais, Sao Jose dos Campos, SP 12228-904 (Brazil)

    2005-08-01

    Doped diamond films have been deposited on carbon fibers (felt) obtained from polyacrylonitrile at different levels of boron doping. For a successful coating of the fibers, an ultrasonic pretreatment in a bath of diamond powder dissolved in hexane was required. Films were grown on both sample sides, simultaneously, by hot filament-assisted chemical vapour deposition technique at 750 deg. C from a 0.5% H{sub 2}/CH{sub 4} mixture at a total pressure of 6.5 x 10{sup 3} Pa. Boron was obtained from H{sub 2} forced to pass through a bubbler containing B{sub 2}O{sub 3} dissolved in methanol. The doping level studied corresponds to films with acceptor concentrations in the range of 6.5 x 10{sup 18} to 1.5 x 10{sup 21} cm{sup -} {sup 3}, obtained from Mott-Schottky plots. Scanning electron microscopy analyses evidenced fibers totally covered with high quality polycrystalline boron-doped diamond film, also confirmed by Raman spectroscopy spectra. Diamond electrodes grown on carbon fibers demonstrated similar electrochemical behavior obtained from films on Si substrate, for ferri/ferrocyanide redox couple as a function of boron content. The boron content influences electrochemical surface area. A lower boron concentration provides a higher growth rate that results in a higher surface area.

  14. Highly transparent conductive electrode with ultra-low HAZE by grain boundary modification of aqueous solution fabricated alumina-doped zinc oxide nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Nian, Qiong; Cheng, Gary J. [Birck Nanotechnology Center and School of Industrial Engineering, Purdue University, West Lafayette, Indiana 47906 (United States); Callahan, Michael; Bailey, John [Greentech Solutions, Inc., Hanson, Massachusetts 02341 (United States); Look, David [Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States); Efstathiadis, Harry [College of Nanoscale Science and Engineering (CNSE), University of Albany, Albany, New York 12203 (United States)

    2015-06-01

    Commercial production of transparent conducting oxide (TCO) polycrystalline films requires high electrical conductivity with minimal degradation in optical transparency. Aqueous solution deposited TCO films would reduce production costs of TCO films but suffer from low electrical mobility, which severely degrades both electrical conductivity and optical transparency in the visible spectrum. Here, we demonstrated that grain boundary modification by ultra-violet laser crystallization (UVLC) of solution deposited aluminium-doped zinc oxide (AZO) nanocrystals results in high Hall mobility, with a corresponding dramatic improvement in AZO electrical conductance. The AZO films after laser irradiation exhibit electrical mobility up to 18.1 cm{sup 2} V{sup −1} s{sup −1} with corresponding electrical resistivity and sheet resistances as low as 1 × 10{sup −3} Ω cm and 75 Ω/sq, respectively. The high mobility also enabled a high transmittance (T) of 88%-96% at 550 nm for the UVLC films. In addition, HAZE measurement shows AZO film scattering transmittance as low as 1.8%, which is superior over most other solution deposited transparent electrode alternatives such as silver nanowires. Thus, AZO films produced by the UVLC technique have a combined figure of merit for electrical conductivity, optical transparency, and optical HAZE higher than other solution based deposition techniques and comparable to vacuumed based deposition methods.

  15. Dopant concentration dependent magnetism of Cu-doped TiO{sub 2} nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Anitha, B.; Khadar, M. Abdul, E-mail: mabdulkhadar@rediffmail.com [University of Kerala, Centre for Nanoscience and Nanotechnology (India)

    2016-06-15

    Undoped and Cu-doped nanocrystals of TiO{sub 2} having the size range of 8–11 nm were synthesized by peroxide gel method. XRD analysis using Rietveld refinement confirmed anatase phase with a small percentage of rutile content for undoped TiO{sub 2} nanocrystals while a pure anatase phase with preferential growth along [004] direction was observed for nanocrystals of Cu-doped TiO{sub 2}. Variation in the intensity ratios of the XRD peaks of the doped samples compared to that of the undoped sample offered an evidence for the substitutional incorporation of Cu ions in the TiO{sub 2} lattice. The preferential growth of the nanocrystals along the [004] direction was verified using HRTEM analysis. Cu doping extended the optical absorption edge of TiO{sub 2} nanocrystals to the visible spectral region and caused a blue shift and broadening of the E{sub g} (1) Raman active mode of anatase TiO{sub 2}. Undoped TiO{sub 2} sample showed a weak ferromagnetism superimposed on a diamagnetic background while Cu-doped TiO{sub 2} samples exhibited a weak ferromagnetism in the low-field region with a paramagnetic component in the high-field region. The magnetic moment exhibited by the doped samples is interpreted as the resultant of a weak ferromagnetic moment in the low-field region arising from the presence of defects near the surface of TiO{sub 2} nanoparticles or from the interaction of the substituted Cu ions with the oxygen vacancies, and the paramagnetic contribution from the increased Cu dopant concentration near the surface of the particles arising from self-purification mechanism.

  16. Effect of nickel doping concentration on structural and magnetic properties of ultrafine diluted magnetic semiconductor ZnO nanoparticles

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    The ZnO:Ni 2+ nanoparticles of mean size 2-12 nm were synthesized at room temperature by the simple co-precipitation method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). The wurtzite structure of ZnO gradually degrades with the increasing Ni doping concentration and an additional NiO-associated diffraction peak was observed above 15% of Ni 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Ni 2+ doping concentration was investigated using a vibrating sample magnetometer (VSM). Initially, these nanoparticles showed strong ferromagnetic behavior, however, at higher doping percentage of Ni 2+ , the ferromagnetic behavior was suppressed and paramagnetic nature was observed. The enhanced antiferromagnetic interaction between neighboring Ni-Ni ions suppressed the ferromagnetism at higher doping concentrations of Ni 2+ .

  17. Scintillation characteristic of In, Ga-doped ZnO thin films with different dopant concentrations

    International Nuclear Information System (INIS)

    Fujimoto, Yutaka; Yanagida, Takayuki; Yokota, Yuui; Chani, Valery; Yoshikawa, Akira; Sekiwa, Hideyuki

    2011-01-01

    The present study describes the first detailed evaluation of the rise and the decay time of scintillation phenomenon in In 3+ - and Ga 3+ -doped ZnO thin films with different dopant concentrations. In 3+ -(25, 55, and 141 ppm) and Ga 3+ -(33, 67, 333, and 1374 ppm) doped ZnO films were grown by the Liquid Phase Epitaxy (LPE) method. The characterization was performed using the pulse X-ray equipped streak camera system. Both the rise and the decay times were shortened considerably with increasing content of In 3+ and Ga 3+ in the films. However, the scintillation light yield under 241 Am α-ray excitation reduced when concentration of In 3+ and Ga 3+ in the ZnO films was high. (author)

  18. Photoacoustic study of the effect of doping concentration on the transport properties of GaAs epitaxial layers

    NARCIS (Netherlands)

    George, S.D.; Dilna, S.; Prasanth, R.; Radhakrishnan, P.; Vallabhan, C.P.G.; Nampoori, V.P.N.

    2003-01-01

    We report a photoacoustic (PA) study of the thermal and transport properties of a GaAs epitaxial layer doped with Si at varying doping concentration, grown on GaAs substrate by molecular beam epitaxy. The data are analyzed on the basis of Rosencwaig and Gersho's theory of the PA effect. The

  19. Polymeric Luminescent Compositions Doped with Beta-Diketonates Boron Difluoride as Material for Luminescent Solar Concentrator

    Science.gov (United States)

    Khrebtov, A. A.; Fedorenko, E. V.; Reutov, V. A.

    2017-11-01

    In this paper we investigated polymeric luminescent compositions based on polystyrene doped with beta diketonates boron difluoride. Transparent films with effective absorption in the ultraviolet and blue regions of the spectrum were obtained. Polymeric luminescent compositions based on the mixture of dyes allow expanding the absorption region and increase the radiation shift. A luminescent solar concentrator consisting of a glass plate coated with such film can be used for photovoltaic window application.

  20. Effect of ZDDP concentration on the thermal film formation on steel, hydrogenated non-doped and Si-doped DLC

    Energy Technology Data Exchange (ETDEWEB)

    Akbari, S. [Laboratory for Tribology and Interface Nanotechnology, University of Ljubljana, Ljubljana (Slovenia); Kovač, J. [Jozef Stefan Institute, Jamova 19, 1000 Ljubljana (Slovenia); Kalin, M., E-mail: mitjan.kalin@tint.fs.uni-lj.si [Laboratory for Tribology and Interface Nanotechnology, University of Ljubljana, Ljubljana (Slovenia)

    2016-10-15

    Highlights: • The effect of the ZDDP concentrations onto the steel, H-DLC and Si-DLC surfaces is investigated. • ZDDP film structure on the DLC coatings is different from steel. • Different concentrations of ZDDP do not affect the final chemical structure of the ZDDP film on any of the studied surfaces. • The thickness of the thermal film is linear with the concentration for a given surface. • The reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings. - Abstract: This work focuses on the ZDDP concentration (1, 5 and 20 wt%) to form a ZDDP film on surfaces during static thermal tests at 150 °C. Silicon-doped and hydrogenated DLC coatings, as well as steel as reference, were studied using Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The results show that, on the three surfaces, the structure of the ZDDP thermal film consists of identical groups of pyrophosphate and zinc oxide, while the sulphuric groups are dissimilar. On the steel surface, the sulphuric part consists of a mixture of organic sulphide and sulphohydryl groups, but on H-DLC and Si-DLC only organic sulphide groups are found; there are no sulphohydryl groups. Moreover, both ATR-FTIR and XPS show that different concentrations of ZDDP do not affect the final chemical structure of the ZDDP thermal film on any of the studied surfaces. In addition, the XPS results show that the thickness of the thermal film is linear with the concentration for the whole range from 1 to 20 wt%, supporting also its uniform chemical structure. These thicknesses further show that the reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings.

  1. Effect of doping concentration on the structural, morphological, optical and electrical properties of Mn-doped CdO thin films

    Directory of Open Access Journals (Sweden)

    Manjula N.

    2015-12-01

    Full Text Available Thin films of manganese-doped cadmium oxide (CdO:Mn with different Mn-doping levels (0, 1, 2, 3 and 4 at.% were deposited on glass substrates by employing an inexpensive, simplified spray technique using a perfume atomizer at 375 °C. The influence of Mn incorporation on the structural, morphological, optical and electrical properties of CdO films has been studied. All the films exhibit cubic crystal structure with a (1 1 1 preferential orientation. Mn-doping causes a slight shift of the (1 1 1 diffraction peak towards higher angle. The crystallite size of the films is found to decrease from 34.63 nm to 17.68 nm with an increase in Mn doping concentration. The CdO:Mn film coated with 1 at.% Mn exhibit a high transparency of nearly 90 % which decreases for higher doping concentration. The optical band gap decreases with an increase in Mn doping concentration. All the films have electrical resistivity of the order of 10−4 Ω·cm.

  2. Effect of ZDDP concentration on the thermal film formation on steel, hydrogenated non-doped and Si-doped DLC

    Science.gov (United States)

    Akbari, S.; Kovač, J.; Kalin, M.

    2016-10-01

    This work focuses on the ZDDP concentration (1, 5 and 20 wt%) to form a ZDDP film on surfaces during static thermal tests at 150 °C. Silicon-doped and hydrogenated DLC coatings, as well as steel as reference, were studied using Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR) spectroscopy and X-ray Photoelectron Spectroscopy (XPS). The results show that, on the three surfaces, the structure of the ZDDP thermal film consists of identical groups of pyrophosphate and zinc oxide, while the sulphuric groups are dissimilar. On the steel surface, the sulphuric part consists of a mixture of organic sulphide and sulphohydryl groups, but on H-DLC and Si-DLC only organic sulphide groups are found; there are no sulphohydryl groups. Moreover, both ATR-FTIR and XPS show that different concentrations of ZDDP do not affect the final chemical structure of the ZDDP thermal film on any of the studied surfaces. In addition, the XPS results show that the thickness of the thermal film is linear with the concentration for the whole range from 1 to 20 wt%, supporting also its uniform chemical structure. These thicknesses further show that the reactivity of the ZDDP film is higher on the steel surface than on the DLC coatings.

  3. Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

    Science.gov (United States)

    Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

    2018-01-01

    Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

  4. Influence of Ag doping concentration on structural and optical properties of CdS thin film

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pragati, E-mail: pkumar.phy@gmail.com [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India); Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Saxena, Nupur; Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi, 110 007 (India); Agarwal, Avinash [Department of Physics, Bareilly College, Bareilly, 243 005, Uttar Pradesh (India)

    2015-05-15

    This work shows the influence of Ag concentration on structural properties of pulsed laser deposited nanocrystalline CdS thin film. X-ray photoelectron spectroscopy (XPS) studies confirm the dopant concentration in CdS films and atomic concentration of elements. XPS studies show that the samples are slightly sulfur deficient. GAXRD scan reveals the structural phase transformation from cubic to hexagonal phase of CdS without appearance of any phase of CdO, Ag{sub 2}O or Ag{sub 2}S suggesting the substitutional doping of Ag ions. Photoluminescence studies illustrate that emission intensity increases with increase in dopant concentration upto 5% and then decreases for higher dopant concentration.

  5. Influence of Sc doping concentration on electronic structure and optical properties of ZnO

    International Nuclear Information System (INIS)

    Wu Yuxi; Zhang Hao; Han Long; Qu Licheng; Gu Shulin; Li Teng

    2011-01-01

    In this paper, we adopt the density functional theory (DFT) plane wave pseudopotential method to study the crystal structure, electronic structure and optical property for the different concentrations of Sc doped ZnO system. We optimize the structure of Sc and get the basis of numerical simulation. The results show that with the adoption of Sc, the lattice constants of the system increase gradually, the energy of the system becomes larger, the Fermi level enters into the conduction band, the system shows Metallic gradually and the band gap becomes wider. On the other hand, certain changes of the optical properties of doped ZnO have taken place, i. e., a new absorption peak happens in ZnO absorption spectrum and the blue shift of absorption edge with the new peak occurs in the imagery part of dielectric function. (authors)

  6. Electrochemical oxidation of biological pretreated and membrane separated landfill leachate concentrates on boron doped diamond anode

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Bo, E-mail: 357436235@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Yu, Zhiming, E-mail: zhiming@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Wei, Qiuping, E-mail: qiupwei@csu.edu.cn [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083 (China); Long, HangYu, E-mail: 55686385@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Xie, Youneng, E-mail: 1187272844@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China); Wang, Yijia, E-mail: 503630433@qq.com [School of Materials Science and Engineering, Central South University, Changsha 410083 (China)

    2016-07-30

    Highlights: • High quality boron-doped diamond film electrodes were synthesized on Nb substrates. • Electrochemical oxidation on boron-doped diamond anode is an effective method for treating landfill leachate concentrates. • Optimal operating conditions for electrochemical oxidation of landfill leachate concentrates is determined. • 87.5% COD removal and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment. - Abstract: In the present study, the high quality boron-doped diamond (BDD) electrodes with excellent electrochemical properties were deposited on niobium (Nb) substrates by hot filament chemical vapor deposition (HFCVD) method. The electrochemical oxidation of landfill leachate concentrates from disc tube reverse osmosis (DTRO) process over a BDD anode was investigated. The effects of varying operating parameters, such as current density, initial pH, flow velocity and cathode material on degradation efficiency were also evaluated following changes in chemical oxygen demand (COD) and ammonium nitrogen (NH{sub 3}−N). The instantaneous current efficiency (ICE) was used to appraise different operating conditions. As a result, the best conditions obtained were as follows, current density 50 mA cm{sup −2}, pH 5.16, flow velocity 6 L h{sup −1}. Under these conditions, 87.5% COD and 74.06% NH{sub 3}−N removal were achieved after 6 h treatment, with specific energy consumption of 223.2 kWh m{sup −3}. In short, these results indicated that the electrochemical oxidation with BDD/Nb anode is an effective method for the treatment of landfill leachate concentrates.

  7. Effect of Mo and Ti doping concentration on the structural and optical properties of ZnS nanoparticles

    Science.gov (United States)

    Naz, Hina; Ali, Rai Nauman; Zhu, Xingqun; Xiang, Bin

    2018-06-01

    In this paper, we report the effect of single phase Mo and Ti doping concentration on the structural and optical properties of the ZnS nanoparticles. The structural and optical properties of the as-synthesized samples have been examined by x-ray diffraction, transmission electron microscopy (TEM), UV-visible near infrared absorption spectroscopy and x-ray photoelectron spectroscopy. TEM characterizations reveal a variation in the doped ZnS nanoparticle size distribution by utilizing different dopants of Mo and Ti. In absorption spectra, a clear red shift of 14 nm is observed with increasing Mo concentration as compared to pure ZnS nanoparticles, while by increasing Ti doping concentration, blue shift of 14 nm is obtained. Moreover, it demonstrates that the value of energy band gap decreases from 4.03 eV to 3.89 eV in case of Mo doping. However, the value of energy band gap have shown a remarkable increase from 4.11 eV to 4.27 eV with increasing Ti doping concentration. Our results provide a new pathway to understand the effect of Mo and Ti doping concentrations on the structural and optical properties of ZnS nanoparticles as it could be the key to tune the properties for future optoelectronic devices.

  8. Solution-processed organic thermoelectric materials exhibiting doping-concentration-dependent polarity.

    Science.gov (United States)

    Hwang, Sunbin; Potscavage, William J; Yang, Yu Seok; Park, In Seob; Matsushima, Toshinori; Adachi, Chihaya

    2016-10-26

    Recent progress in conducting polymer-based organic thermoelectric generators (OTEGs) has resulted in high performance due to high Seebeck coefficient, high electrical conductivity (σ), and low thermal conductivity obtained by chemically controlling the materials's redox levels. In addition to improving the properties of individual OTEGs to obtain high performance, the development of solution processes for the fabrication of OTEG modules is necessary to realize large thermoelectric voltage and low-cost mass production. However, the scarcity of good candidates for soluble organic n-type materials limits the use of π-leg module structures consisting of complementary elements of p- and n-type materials because of unbalanced transport coefficients that lead to power losses. In particular, the extremely low σ of n-type materials compared with that of p-type materials is a serious challenge. In this study, poly(pyridinium phenylene) (P(PymPh)) was tested as an n-type semiconductor in solution-processed OTEGs, and the carrier density was controlled by a solution-based chemical doping process using the dopant sodium naphthalenide, a well-known reductant. The electronic structures and doping mechanism of P(PymPh) were explored based on the changes in UV-Vis-IR absorption, ultraviolet photoelectron, and X-ray photoelectron spectra. By controlling the dopant concentration, we demonstrate a maximum n-type power factor of 0.81 μW m -1 K -2 with high σ, and at higher doping concentrations, a switch from n-type to p-type TE operation. This is one of the first cases of a switch in polarity just by increasing the concentration of the reductant and may open a new route for simplified fabrication of complementary organic layers.

  9. Quantification of urinary AICAR concentrations as a matter of doping controls.

    Science.gov (United States)

    Thomas, Andreas; Beuck, Simon; Eickhoff, Jens Christian; Guddat, Sven; Krug, Oliver; Kamber, Matthias; Schänzer, Wilhelm; Thevis, Mario

    2010-04-01

    Influencing the endurance in elite sports is one of the key points in modern sports science. Recently, a new class of prohibited substances reached in the focus of doping control laboratories and their misuse was classified as gene doping. The adenosine monophosphate activated protein kinase activator 5-amino-4-imidazolecarboxyamide ribonucleoside (AICAR) was found to significantly enhance the endurance even in sedentary mice after treatment. Due to endogenous production of AICAR in healthy humans, considerable amounts were present in the circulation and, thus, were excreted into urine. Considering these facts, the present study was initiated to fix reference values of renally cleared AICAR in elite athletes. Therefore a quantitative analytical method by means of isotope-dilution liquid chromatography (analytical column: C6-phenyl) coupled to tandem mass spectrometry, after a sample preparation consisting of a gentle dilution of native urine, was developed. Doping control samples of 499 athletes were analysed, and AICAR concentrations in urine were determined. The mean AICAR value for all samples was 2,186 ng/mL with a standard deviation of 1,655 ng/mL. Concentrations were found to differ depending on gender, type of sport and type of sample collection (in competition/out of competition). The method was fully validated for quantitative purposes considering the parameters linearity, inter- (12%, 7% and 10%) and intraday precision (14%, 9% and 12%) at low, mid and high concentration, robustness, accuracy (approx. 100%), limit of quantification (100 ng/mL), stability and ion suppression effects, employing an in-house synthesised (13)C(5)-labelled AICAR as internal standard.

  10. Growth and laser action of Yb: YVO4 crystals with low Yb doping concentration

    Science.gov (United States)

    Zhong, Degao; Teng, Bing; Li, Jianhong; Zhang, Shiming; Zhang, Bingtao; Wang, Chao; Tian, Xueping; Liu, Junhai

    2012-11-01

    Yb: YVO4 single crystals with low doping concentrations of Yb3+ less than 0.3 at% were grown using the Czochralski method. The polarized absorption spectra were measured at room temperature. Strong anisotropy exists in the absorption spectra, resulting in almost entirely different features for π-polarization and σ-polarization. The laser emission spectrum and relationship curve between the output power and absorbed pump power (Pabs) were measured. The continuous-wave laser action of Yb: YVO4 single crystal in a range of 1020.4-1026.3 nm was realized by using a high-power diode laser as the pump source.

  11. Comparative study of thermal lensing in low-doped Nd:YVO4 and Nd:GdVO4 of equal doping concentration

    CSIR Research Space (South Africa)

    Strauss

    2009-06-01

    Full Text Available stream_source_info Strauss_2009.pdf.txt stream_content_type text/plain stream_size 4705 Content-Encoding UTF-8 stream_name Strauss_2009.pdf.txt Content-Type text/plain; charset=UTF-8 Comparative Study of Thermal Lensing... in Low-doped Nd:YVO4 and Nd:GdVO4 of Equal Doping Concentration H. J. Strauss1,2, C. Bollig1, H. M. von Bergmann2 and M. J. D. Esser1 1. National Laser Centre, Council for Scientific and Industrial Research, PO Box 395, Pretoria 0001, South Africa 2...

  12. Photoluminescence of highly compensated GaAs doped with high concentration of Ge

    Science.gov (United States)

    Watanabe, Masaru; Watanabe, Akira; Suezawa, Masashi

    1999-12-01

    We have studied the photoluminescence (PL) properties of Ge-doped GaAs crystals to confirm the validity of a theory developed by Shklovskii and Efros to explain the donor-acceptor pair (DAP) recombination in potential fluctuation. GaAs crystals doped with Ge of various concentrations were grown by a liquid-encapsulated Czochralski method. They were homogenized by annealing at 1200°C for 20 h under the optimum As vapor pressure. Both quasi-continuous and time-resolved PL spectra were measured at 4.2 K. The quasi-continuous PL spectra showed that the peak position shifted to lower energy as the Ge concentration increased, which was consistent with the Shklovskii and Efros's theory. Under very strong excitation in time-resolved measurements, the exciton peak appeared within short periods after excitation and then the peak shifted to that of DAP recombination. This clearly showed that the potential fluctuation disappeared under strong excitation and then recovered as the recombination proceeded.

  13. Ultralow denier polybenzimidazole (PBI) yarns

    Science.gov (United States)

    Tan, M.; Leal, J. R.

    1977-01-01

    A study to determine the feasibility of preparing ultralow denier polybenzimidazole (PBI) yarns was undertaken. Conditions that presently yield multifilament yarns with bundle deniers ranging from 75 to 15,000 were used as a baseline. From this starting point, process parameters were identified that give five filament yarns with yarn densiers as low as 0.80. Physical properties from such ultralow denier yarns were at levels that would permit subsequent fabrication into fabrics.

  14. Influence of nitrogen-doping concentration on the electronic structure of CuAlO{sub 2} by first-principles studies

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Wei-wei, E-mail: zmliuwwliu@126.com; Chen, Hong-xia; Liu, Cheng-lin; Wang, Rong

    2017-02-05

    Effect of N doping concentration on the electronic structure of N-doped CuAlO{sub 2} was investigated by density functional theory based on generalized-gradient approximation plus orbital potential. Lattice parameters a and c both increase with increasing N-doping concentration. Formation energies increase with increasing N doping concentration and all N-doped CuAlO{sub 2} were structurally stable. The calculated band gaps for N-doped CuAlO{sub 2} narrowed compared to pure CuAlO{sub 2}, which was attributed to the stronger hybridization between Cu-3d and N-2p states and the downward shift of Cu-3p states in conduction bands. The higher the N-doping concentration is, the narrower the band gap. N-doped CuAlO{sub 2} shows a typical p-type semiconductor. The band structure changed from indirect to direct after N doping which will benefit the application of the CuAlO{sub 2} materials in optoelectronic and electronic devices. - Highlights: • Electronic structures of CuAlO{sub 2} with different N content were investigated. • The higher the N-doping concentration is, the narrower the band gap. • All the CuAlO{sub 2} with different N content were structurally stable. • The N-doped CuAlO{sub 2} shows a typical p-type semiconductor characteristic.

  15. Characteristic analysis on the physical properties of nanostructured Mg-doped CdO thin films—Doping concentration effect

    Directory of Open Access Journals (Sweden)

    K. Usharani

    2015-06-01

    Full Text Available Highly conductive and transparent magnesium-doped cadmium oxide (CdO:Mg thin films have been deposited on suitably cleaned glass substrates maintained at 375 °C by spray pyrolysis technique using perfume atomizer. The magnesium content in the films is varied from 0 to 8 at% in steps of 2 at%. The effect of Mg doping on the structural, morphological, optical and electrical properties of the CdO thin films has been studied. All the films exhibited cubic structure with a preferential orientation along the (1 1 1 plane irrespective of the Mg doping level. SEM analysis showed that the film morphology modifies from spherical shaped grains to closely packed cauliflower shaped nanostructures with Mg doping. Except for the film coated with 2 at% Mg dopant, all the other doped films exhibited a blue shift in the optical band gap. Electrical studies revealed that the CdO:Mg film coated with 8 at% Mg dopant had a minimum resistivity of 0.0853×101 Ω-cm.

  16. Fabrication, Characterization, and Antimicrobial Activity, Evaluation of Low Silver Concentrations in Silver-Doped Hydroxyapatite Nanoparticles

    Directory of Open Access Journals (Sweden)

    A. Costescu

    2013-01-01

    Full Text Available The aim of this study was the evaluation of (Ca10-xAgx(PO46(OH2 nanoparticles (Ag:HAp-NPs for their antibacterial and antifungal activity. Resistance to antimicrobial agents by pathogenic bacteria has emerged in the recent years as a major public health problem worldwide. In this paper, we report a comparison of the antimicrobial activity of low concentrations silver-doped hydroxyapatite nanoparticles. The silver-doped nanocrystalline hydroxyapatite powder was synthesized at 100°C in deionised water. The as-prepared Ag:Hap nanoparticles were characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, FT-IR, and FT-Raman spectroscopy. X-ray diffraction (XRD studies demonstrate that powders obtained by coprecipitation at 100°C exhibit the apatite characteristics with good crystal structure, without any new phase or impurities found. FT-IR and FT-Raman spectroscopy revealed the presence of the various vibrational modes corresponding to phosphates and hydroxyl groups and the absence of any band characteristic to silver. The specific microbiological assays demonstrated that Ag:HAp-NPs exhibited antimicrobial features, but interacted differently with the Gram-positive, Gram-negative bacterial and fungal tested strains.

  17. Effect of Co doping concentration on structural properties and optical parameters of Co-doped ZnO thin films by sol-gel dip-coating method.

    Science.gov (United States)

    Nam, Giwoong; Yoon, Hyunsik; Kim, Byunggu; Lee, Dong-Yul; Kim, Jong Su; Leem, Jae-Young

    2014-11-01

    The structural and optical properties of Co-doped ZnO thin films prepared by a sol-gel dip-coating method were investigated. X-ray diffraction analysis showed that the thin films were grown with a c-axis preferred orientation. The position of the (002) peak was almost the same in all samples, irrespective of the Co concentration. It is thus clear that Co doping had little effect on the position of the (002) peak. To confirm that Co2+ was substituted for Zn2+ in the wurtzite structure, optical measurements were conducted at room temperature by a UV-visible spectrometer. Three absorption peaks are apparent in the Co-doped ZnO thin films that do not appear for the undoped ZnO thin film. As the Co concentration was increased, absorption related to characteristic Co2+ transitions increased because three absorption band intensities and the area underneath the absorption wells between 500 and 700 nm increased with increasing Co concentration. The optical band gap and static dielectric constant decreased and the Urbach energy and extinction coefficient increased with increasing Co concentration.

  18. Effect of CSA Concentration on the Ammonia Sensing Properties of CSA-Doped PA6/PANI Composite Nanofibers

    Directory of Open Access Journals (Sweden)

    Zengyuan Pang

    2014-11-01

    Full Text Available Camphor sulfonic acid (CSA-doped polyamide 6/polyaniline (PA6/PANI composite nanofibers were fabricated using in situ polymerization of aniline under different CSA concentrations (0.02, 0.04, 0.06, 0.08 and 0.10 M with electrospun PA6 nanofibers as templates. The structural, morphological and ammonia sensing properties of the prepared composite nanofibers were studied using scanning electron microscopy (SEM, Fourier transform infrared spectroscopy (FT-IR, four-point probe techniques, X-ray diffraction (XRD and a home-made gas sensing test system. All the results indicated that the CSA concentration had a great influence on the sensing properties of CSA-doped PA6/PANI composite nanofibers. The composite nanofibers doped with 0.02 M CSA showed the best ammonia sensing properties, with a significant sensitivity toward ammonia (NH3 at room temperature, superior to that of the composite nanofibers doped with 0.04–0.10 mol/L CSA. It was found that for high concentrations of CSA, the number of PANI–H+ reacted with NH3 would not make up a high proportion of all PANI–H+ within certain limits. As a result, within a certain range even though higher CSA-doped PA6/PANI nanofibers had better conductivity, their ammonia sensing performance would degrade.

  19. Low-Concentration Indium Doping in Solution-Processed Zinc Oxide Films for Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Xue Zhang

    2017-07-01

    Full Text Available We investigated the influence of low-concentration indium (In doping on the chemical and structural properties of solution-processed zinc oxide (ZnO films and the electrical characteristics of bottom-gate/top-contact In-doped ZnO thin-film transistors (TFTs. The thermogravimetry and differential scanning calorimetry analysis results showed that thermal annealing at 400 °C for 40 min produces In-doped ZnO films. As the In content of ZnO films was increased from 1% to 9%, the metal-oxygen bonding increased from 5.56% to 71.33%, while the metal-hydroxyl bonding decreased from 72.03% to 9.63%. The X-ray diffraction peaks and field-emission scanning microscope images of the ZnO films with different In concentrations revealed a better crystalline quality and reduced grain size of the solution-processed ZnO thin films. The thickness of the In-doped ZnO films also increased when the In content was increased up to 5%; however, the thickness decreased on further increasing the In content. The field-effect mobility and on/off current ratio of In-doped ZnO TFTs were notably affected by any change in the In concentration. Considering the overall TFT performance, the optimal In doping concentration in the solution-processed ZnO semiconductor was determined to be 5% in this study. These results suggest that low-concentration In incorporation is crucial for modulating the morphological characteristics of solution-processed ZnO thin films and the TFT performance.

  20. Effect of Low Concentration Sn Doping on Optical Properties of CdS Films Grown by CBD Technique

    Directory of Open Access Journals (Sweden)

    Mohd Sabri Mohd Ghazali

    2011-09-01

    Full Text Available Thin and transparent films of doped cadmium sulfide (CdS were obtained on commercial glass substrates by Chemical Bath Deposition (CBD technique. The films were doped with low concentration of Sn, and annealed in air at 300 °C for 45 min. The morphological characterization of the films with different amounts of dopant was made using SEM and EDAX analysis. Optical properties of the films were evaluated by measuring transmittance using the UV-vis spectrophotometer. A comparison of the results revealed that lower concentration of Sn doping improves transmittance of CdS films and makes them suitable for application as window layer of CdTe/CIGS solar cells.

  1. Synthesis, Surface Modification and Optical Properties of Thioglycolic Acid-Capped ZnS Quantum Dots for Starch Recognition at Ultralow Concentration

    Science.gov (United States)

    Tayebi, Mahnoush; Tavakkoli Yaraki, Mohammad; Ahmadieh, Mahnaz; Mogharei, Azadeh; Tahriri, Mohammadreza; Vashaee, Daryoosh; Tayebi, Lobat

    2016-11-01

    In this research, water-soluble thioglycolic acid-capped ZnS quantum dots (QDs) are synthesized by the chemical precipitation method. The prepared QDs are characterized using x-ray diffraction and transmission electron microscopy. Results revealed that ZnS QDs have a 2.73 nm crystallite size, cubic zinc blende structure, and spherical morphology with a diameter less than 10 nm. Photoluminescence (PL) spectroscopy is performed to determine the presence of low concentrations of starch. Four emission peaks are observed at 348 nm, 387 nm, 422 nm, and 486 nm and their intensities are quenched by increasing concentration of starch. PL intensity variations in the studied concentrations range (0-100 ppm) are best described by a Michaelis-Menten model. The Michaelis constant ( K m) for immobilized α-amylase in this system is about 101.07 ppm. This implies a great tendency for the enzyme to hydrolyze the starch as substrate. Finally, the limit of detection is found to be about 6.64 ppm.

  2. Defect concentration in nitrogen-doped graphene grown on Cu substrate: A thickness effect

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Dhananjay K., E-mail: dhananjay@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Fateixa, Sara [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Hortigüela, María J. [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Vidyasagar, Reddithota [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Otero-Irurueta, Gonzalo [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Nogueira, Helena I.S. [Department of Chemistry & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); Singh, Manoj Kumar [Department of Mechanical Engineering & Centre for Mechanical Technology & Automation, University of Aveiro, 3810-193 Aveiro (Portugal); Kholkin, Andrei, E-mail: kholkin@ua.pt [Department of Physics & CICECO – Aveiro Institute of Materials, University of Aveiro, 3810-193 Aveiro (Portugal); School of Natural Sciences and Mathematics, Ural Federal University, 620000 Ekaterinburg (Russian Federation)

    2017-05-15

    Tuning the band-gap of graphene is a current need for real device applications. Copper (Cu) as a substrate plays a crucial role in graphene deposition. Here we report the fabrication of in-situ nitrogen (N) doped graphene via chemical vapor deposition (CVD) technique and the effect of Cu substrate thickness on the growth mechanism. The ratio of intensities of G and D peaks was used to evaluate the defect concentration based on local activation model associated with the distortion of the crystal lattice due to incorporation of nitrogen atoms into graphene lattice. The results suggest that Cu substrate of 20 µm in thickness exhibits higher defect density (1.86×10{sup 12} cm{sup −2}) as compared to both 10 and 25 µm thick substrates (1.23×10{sup 12} cm{sup −2} and 3.09×10{sup 11} cm{sup −2}, respectively). Furthermore, High Resolution -X-ray Photoelectron Spectroscopy (HR-XPS) precisely affirms ~0.4 at% of nitrogen intercalations in graphene. Our results show that the substitutional type of nitrogen doping dominates over the pyridinic configuration. In addition, X-ray diffraction (XRD) shows all the XRD peaks associated with carbon. However, the peak at ~24° is suppressed by the substrate peaks (Cu). These results suggest that nitrogen atoms can be efficiently incorporated into the graphene using thinner copper substrates, rather than the standard 25 µm ones. This is important for tailoring the properties by graphene required for microelectronic applications.

  3. The dependence of Raman scattering on Mg concentration in Mg-doped GaN grown by MBE

    International Nuclear Information System (INIS)

    Flynn, Chris; Lee, William

    2014-01-01

    Magnesium-doped GaN (GaN:Mg) films having Mg concentrations in the range 5 × 10 18 –5 × 10 20 cm −3 were fabricated by molecular beam epitaxy. Raman spectroscopy was employed to study the effects of Mg incorporation on the positions of the E 2 and A 1 (LO) lines identifiable in the Raman spectra. For Mg concentrations in excess of 2 × 10 19 cm −3 , increases in the Mg concentration shift both lines to higher wave numbers. The shifts of the Raman lines reveal a trend towards compressive stress induced by incorporation of Mg into the GaN films. The observed correlation between the Mg concentration and the Raman line positions establish Raman spectroscopy as a useful tool for optimizing growth of Mg-doped GaN. (papers)

  4. Effect of CTAB concentration on synthesis of nickel doped manganese oxide nanoparticles

    Science.gov (United States)

    Shobana, R.; Saravanakumar, B.; Ravi, G.; Yuvakkumar, R.

    2018-05-01

    In this work the effect of concentration of cetyltrimethylammonium bromide (CTAB) in the synthesis of Nickel doped Manganese oxide (Ni-MnO2) nanoparticles have been carried out by adopting the sol-gel process. The synthesized products were characterized by XRD, Infra- Red (FTIR) and SEM analysis. The XRD confirms the formation of Ni-MnO2 nanoparticles illustrate peak at 31.4° with lattice plane (-231). The IR spectra correspond to the peak at 592 and 846 cm-1 attributed to the characteristics peak for Ni-MnO2 nanoparticles. The SEM images for all three Ni-MnO2 nanoparticles for different concentration of CTAB allows us to assess the formation route of nano tentacles from 10 mM, 30 mM and 50 mM. The configured nano tentacles of Ni-MnO2 nanoparticles presumably leads to more significantly change its properties, particularly in its electrochemical properties show the ways to be suitable candidates for supercapacitor, battery, photo catalytic and fuel cell applications.

  5. Hydrogen-boron complexes in heavily boron-doped silicon treated with high concentration of hydrogen atoms

    International Nuclear Information System (INIS)

    Fukata, N.; Fukuda, S.; Sato, S.; Ishioka, K.; Kitajima, M.; Hishita, S.; Murakami, K.

    2006-01-01

    The formation of hydrogen (H)-related complexes was investigated in boron (B)-doped Si treated with high concentration of H. The isotope shifts of H-related Raman peaks by replacement of H to deuterium and 1 B to 11 B clearly showed the formation of the B-H complexes in which H directly bonds to B in Si. The results of the resistivity measurements suggested that the B acceptors are passivated via the formation of the B-H complexes, as well as the well-known passivation center in B-doped Si, namely, H-B passivation center

  6. Concentration dependent luminescence quenching of Er{sup 3+}-doped zinc boro-tellurite glass

    Energy Technology Data Exchange (ETDEWEB)

    Said Mahraz, Zahra Ashur; Sahar, M.R., E-mail: mrahim057@gmail.com; Ghoshal, S.K.; Reza Dousti, M.

    2013-12-15

    Understanding the mechanism of luminescence quenching in rare earth doped tellurite glass is an important issue. The Er{sup 3+}-doped boro-tellurite glasses with compositions 30B{sub 2}O{sub 3}+10ZnO+(60−x)TeO{sub 2}+xEr{sub 2}O{sub 3} (where x=0, 0.5, 1, 1.5 and 2 mol%) were prepared by melt quenching method. Structural and optical properties of the proposed glasses were characterized using XRD, FTIR, density, UV–vis-IR absorption and PL spectroscopy. The amorphous nature of these glasses was confirmed by XRD technique. The IR-spectrum reveals five absorption bands assigned to different B–O and Te–O vibrational groups. UV–vis-IR absorption spectrum exhibits seven absorption bands at 6553, 10,244, 12,547, 15,360, 19,230, 20,661 and 22,522 cm{sup −1} corresponding to {sup 4}I{sub 13/2}, {sup 4}I{sub 11/2}, {sup 4}I{sub 9/2}, {sup 4}F{sub 9/2}, {sup 2}H{sub 11/2}, {sup 4}F{sub 7/2} and {sup 4}F{sub 3/2} excited states of Er{sup 3+} ion respectively. The optical band gap energy (E{sub opt}) corresponding to the direct and indirect allowed transitions decreased, while the Urbach energy and cut-off wavelengths are increased by the introduction of Er{sup 3+} ions. The refractive index, density and phonon cut-off edge of the samples are increased and the molar volume decreased with the further addition of dopants. The Judd–Ofelt parameter (Ω{sub 2}) decreased from 5.73 to 3.13×10{sup −20} cm{sup 2} with the increase of erbium ions concentration from 0.5 to 2 mol%. The PL spectra show green emissions for the transition from {sup 2}H{sub 11/2} and {sup 4}S{sub 3/2} excited states to {sup 4}I{sub 15/2} ground state, which show strong quenching due to the addition of Er{sup 3+} ions. -- Highlights: • Er{sup 3+}-doped zinc boro-tellurite glass has been synthesized by melt quench method. • Spectroscopic properties dependent concentration is analyzed by different techniques. • Judd–Ofelt intensity parameter (Ω{sub 2}) decreased by increase in erbium

  7. Synthesis of nano-TiO2 photocatalysts with tunable Fe doping concentration from Ti-bearing tailings

    Science.gov (United States)

    Sui, Yulei; Liu, Qingxia; Jiang, Tao; Guo, Yufeng

    2018-01-01

    In this work, highly pure nano-TiO2 photocatalysts with varying Fe doping concentration were successfully synthesized from low-cost Ti-bearing tailings by an acidolysis-hydrothermal route. The effects of H2SO4 concentration, leaching temperature, acid/tailings ratio and leaching time on the recovery of TiO2 from the tailings were investigated. Synthesized samples were characterized by XRD, TEM, EDS, XPS, and UV-vis spectroscopy. The results showed that the material prepared is characteristic anatase with the average size of 20 nm and the Fe doping concentration in the synthesized nano-TiO2 is tunable. The photocatalytic activity of synthesized nano-TiO2 photocatalyst was also evaluated by the photodegradation of Rhodamine B under visible light and UV light irradiation. Our study demonstrates a low-cost approach to synthesize highly efficient and visible light responsive catalysts.

  8. Gain investigation of Perylene-Red-doped PMMA for stimulated luminescent solar concentrators.

    Science.gov (United States)

    Kaysir, Md Rejvi; Fleming, Simon; Argyros, Alexander

    2018-04-01

    Luminescent solar concentrators (LSCs) utilizing stimulated emission by a seed laser are a promising approach to overcome the limitations of conventional LSCs, with a significant reduction of the photovoltaic material. In our previous work, we demonstrated the principle of a stimulated LSC (s-LSC) and correspondingly developed a model for quantifying the output power of such a system, taking into account different important physical parameters. The model suggested Perylene Red (PR) dye as a potential candidate for s-LSCs. Here, we experimentally investigate the gain of PR-doped polymethyl methacrylate (PMMA) required for s-LSCs using a single pump wavelength (instead of the solar spectrum) as a proof of principle. The results found from the experiment are well matched with the previously developed numerical model except for gain saturation, which occurs at a comparatively small seed laser signal power. To investigate the gain saturation, two approaches were taken: investigating (i) spectral hole burning and (ii) triplet state absorption. Experimental investigation of spectral hole burning with PR dyes showed a small effect on the gain saturation. We developed a general state model considering triplet state absorption of the PR dyes for the second approach. The state model suggests that the PR dyes suffer from significant triplet state absorption loss, which obstructs the normal operation of the PR-based s-LSC system.

  9. Improvement in mechanical properties of high concentration particle doped thermoset composites

    International Nuclear Information System (INIS)

    Ahmed, N.

    2009-01-01

    The paper relates to high concentration particle doped composites based on thermosetting polymer systems in which the sequential addition of particles of certain size distribution is followed by curing and casting of the slurry to form a thermoset composite. Conventionally, at a threshold of beyond 90% of particles by weight of the polymer using triglyceride, the mechanical properties of the composite exhibit a sharp decline. The present research mitigates this behavior by incorporating a unique combination of cross-linking agents in the base polymer to impart exceptional mechanical properties to the composite. More specifically, the base polymer consists of butadiene, with triglyceride as cross-linking agent together with hydroxy-alkane as the chain extension precursors, when tune to the appropriate level of hard segment ratio in the polymer. An added advantage according to the present work resides in the analytical nature of butadiene pre-polymer as opposed to natural product; traditional composites based on natural sources are hampered by their inconsistent chemical composition and poor shelf life in the fabricated composite. The thermoset composite according the present research exhibits superior tensile strength (200-300 psi) properties using particle loading as high as 92% by weight of the fabricated composite as measured on a Tinius Olsen machine. Dynamic Mechanical Testing reveals interesting combination of storage and loss moduli in the fabricated specimens as a function of optimizing the thermal response of the viscoelastic composite to imposed vibration loading. (author)

  10. Conventional electron paramagnetic resonance of Mn2+ in synthetic hydroxyapatite at different concentrations of the doped manganese

    Science.gov (United States)

    Murzakhanov, F.; Mamin, G.; Voloshin, A.; Klimashina, E.; Putlyaev, V.; Doronin, V.; Bakhteev, S.; Yusupov, R.; Gafurov, M.; Orlinskii, S.

    2018-05-01

    Powders of synthetic hydroxyapatite doped with Mn2+ ions in concentrations from 0.05 till 5 wt. % were investigated by conventional electron paramagnetic resonance (EPR). The parameters of the spin-Hamiltonian are derived. Partially resolved hyperfine structure in the magnetic fields corresponding to g ≈ 4.3 and g ≈ 9.4 is observed. The narrowing of the central peak with concentration is reported. A possibility to use the linewidth and intensity of the central peak for concentration measurements are discussed. The results could be used for the identification and qualification of Mn2+ in oil, mining and ore formations.

  11. Concentration quenching of Eu{sup 2+} doped Ca{sub 2}BO{sub 3}Cl

    Energy Technology Data Exchange (ETDEWEB)

    Seed Ahmed, H.A.A. [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa); Department of Physics, University of Khartoum, Khartoum (Sudan); Swart, H.C. [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa); Bergman, Peber [Department of Physics, Chemistry and Biology, Linköping University, Linköping (Sweden); Kroon, R.E., E-mail: KroonRE@Uufs.ac.za [Department of Physics, University of the Free State, Bloemfontein, ZA 9300 (South Africa)

    2016-03-15

    Highlights: • Ca{sub 2}BO{sub 3}Cl doped with Eu{sup 2+} prepared by solid state reaction. • Concentration quenching studied by intensity and lifetime measurements. • Accurate determination of the critical transfer distance. • Interaction mechanism verified to be dipole–dipole interactions. - Abstract: With the aim of determining the concentration quenching mechanism of Eu{sup 2+} doped Ca{sub 2}BO{sub 3}Cl, a series of phosphors with a varied Eu{sup 2+} concentration (Ca{sub 2−x}BO{sub 3}Cl:xEu{sup 2+}) was synthesized by the solid state reaction method. The phase structure was determined by X-ray diffraction. Photoluminescence (PL) measurements showed broad excitation and emission signatures of the allowed f–d transition of Eu{sup 2+} ions. The PL emission intensity was found to be increased by increasing the concentration of Eu{sup 2+} ions up to x = 0.03 and then decreased as a result of the concentration quenching effect. The lifetime of the emission from the Eu{sup 2+} ions was measured and the decrease in the lifetime with increasing Eu{sup 2+} concentration confirmed that non-radiative energy transfer occurred between Eu{sup 2+} ions. From the luminescence data, the value of the critical transfer distance was calculated as 1.5 nm and the corresponding concentration quenching mechanism was verified to be a dipole–dipole interaction.

  12. Luminescence study on Eu3+ doped Y2O3 nanoparticles: particle size, concentration and core-shell formation effects

    International Nuclear Information System (INIS)

    Singh, L Robindro; Ningthoujam, R S; Sudarsan, V; Srivastava, Iti; Singh, S Dorendrajit; Dey, G K; Kulshreshtha, S K

    2008-01-01

    Nanoparticles of Eu 3+ doped Y 2 O 3 (core) and Eu 3+ doped Y 2 O 3 covered with Y 2 O 3 shell (core-shell) are prepared by urea hydrolysis for 3 h in ethylene glycol medium at a relatively low temperature of 140 deg. C, followed by heating at 500 and 900 deg. C. Particle sizes determined from x-ray diffraction and transmission electron microscopic studies are 11 and 18 nm for 500 and 900 deg. C heated samples respectively. Based on the luminescence studies of 500 and 900 deg. C heated samples, it is confirmed that there is no particle size effect on the peak positions of Eu 3+ emission, and optimum luminescence intensity is observed from the nanoparticles with a Eu 3+ concentration of 4-5 at.%. A luminescence study establishes that the Eu 3+ environment in amorphous Y (OH) 3 is different from that in crystalline Y 2 O 3 . For a fixed concentration of Eu 3+ doping, there is a reduction in Eu 3+ emission intensity for core-shell nanoparticles compared to that of core nanoparticles, and this has been attributed to the concentration dilution effect. Energy transfer from the host to Eu 3+ increases with increase of crystallinity

  13. Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration

    Science.gov (United States)

    Uchitomi, Naotaka; Hidaka, Shiro; Saito, Shin; Asubar, Joel T.; Toyota, Hideyuki

    2018-04-01

    The relationship between Mn concentration and Curie temperature (TC) is studied for Mn-doped ZnSnAs2 ferromagnetic semiconductors, epitaxially grown on InP substrates by molecular beam epitaxy. In the ferromagnetic phase, Mn distributions in a (Zn,Mn,Sn)As2 thin film with 7.2 cation percent (cat. %) Mn are investigated using three-dimensional atom probe tomography. The results indicate an inhomogeneous distribution which spreads to a relatively high Mn concentration of 9.0 at. % (at. %). In the paramagnetic phase, it is found that the paramagnetic to ferromagnetic transition takes place sharply with a TC of 334 K when the Mn doping concentration increases to about 4 cat. % Mn, which corresponds to a magnetic percolation threshold for ferromagnetism in (Zn,Mn,Sn)As2. An effective Curie temperature ⟨TC⟩ is considered to bridge the Curie temperatures obtained experimentally to those calculated theoretically in inhomogeneous magnetic semiconductors. The behavior of magnetism in Mn-doped ZnSnAs2 can be explained by three different phases within the present framework.

  14. Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Chen, T L [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Furubayashi, Y [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hirose, Y [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hitosugi, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Shimada, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan); Hasegawa, T [Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

    2007-10-07

    Nb{sub 0.06}Sn{sub x}Ti{sub 0.94-x}O{sub 2} (x {<=} 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of {lambda} = 500 nm is estimated to be 12.4% for Nb{sub 0.06}Sn{sub 0.3} Ti{sub 0.64}O{sub 2} thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO{sub 2}. Low resistivity on the order of 10{sup -4} {omega} cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb{sub 0.06}Sn{sub x} Ti{sub 0.94-x}O{sub 2} thin films (x {<=} 0.2). Optical and transport analyses demonstrate that doping Sn into Nb{sub 0.06} Ti{sub 0.94}O{sub 2} can reduce the refractivity while maintaining low resistivity and high transparency.

  15. Anatase phase stability and doping concentration dependent refractivity in codoped transparent conducting TiO2 films

    International Nuclear Information System (INIS)

    Chen, T L; Furubayashi, Y; Hirose, Y; Hitosugi, T; Shimada, T; Hasegawa, T

    2007-01-01

    Nb 0.06 Sn x Ti 0.94-x O 2 (x ≤ 0.3) thin films were grown by a pulsed-laser deposition method with varying Sn concentration. Through a combinatorial technique, we find that Sn concentration can reach a maximum of about x = 0.3 while maintaining the stable anatase phase and epitaxy. A doping concentration dependence of the refractivity is revealed, in which refractivity reduction at a wavelength of λ = 500 nm is estimated to be 12.4% for Nb 0.06 Sn 0.3 Ti 0.64 O 2 thin film. Sn doping induced band-gap blue shift can be contributed to the mixing of extended Sn 5s orbitals with the conduction band of TiO 2 . Low resistivity on the order of 10 -4 Ω cm at room temperature and high internal transmittance of more than 95% in the visible light region are exhibited for Nb 0.06 Sn x Ti 0.94-x O 2 thin films (x ≤ 0.2). Optical and transport analyses demonstrate that doping Sn into Nb 0.06 Ti 0.94 O 2 can reduce the refractivity while maintaining low resistivity and high transparency

  16. Green light emission in aluminum oxide powders doped with different terbium concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Mariscal B, L; Falcony, C. [IPN, Centro de Investigacion y de Estudios Avanzados, 07360 Ciudad de Mexico (Mexico); Carmona T, S.; Murrieta, H.; Sanchez A, M. A. [UNAM, Instituto de Fisica, 04510 Ciudad de Mexico (Mexico); Vazquez A, R. [IPN, Escuela Superior de Computo, 07738 Ciudad de Mexico (Mexico); Garcia R, C. M., E-mail: mariscal2005@gmail.com [UNAM, Facultad de Ciencias, 04510 Ciudad de Mexico (Mexico)

    2016-11-01

    Different emission intensities presented in aluminum oxide phosphors corresponding to different concentrations of doping performed with terbium are analyzed. The phosphors were synthesized by the evaporation technique and were characterized by photo and cathodoluminescence, X-ray diffraction and EDS techniques for different incorporation percentages of terbium as dopant; they show characteristic transitions in 494, 543, 587 and 622 nm, corresponding to {sup 5}D{sub 4} → {sup 7}F{sub 6}, {sup 5}D{sub 4} → {sup 7}F{sub 5}, {sup 5}D{sub 4} → {sup 7}F{sub 4} and {sup 5}D{sub 4} → {sup 7}F{sub 3}, respectively when they are excited with λ{sub exc} = 380 nm wavelength at room temperature. The results of X-ray diffraction show the presence of α-Al{sub 2}O{sub 3} phases with peaks located at 2θ = 25.78, 35.34, 37.96, 43.56, 45.8, 52.74, 57.7, 61.5, 66.74, 68.44, 77.12 and 80.94, and the δ-Al{sub 2}O-3 phase 2θ = 32.82, 45.8, 61.36 and 66.74. These compounds were heat treated for two hours at 1100 degrees Celsius. EDS analyzes indicate that these compounds have close to 60% oxygen around of 40% aluminum in the presence of terbium as dopant which indicates a stoichiometry close to the expected one for alumina. (Author)

  17. Enhanced optical and electrical properties of Y-doped ZnO nanoparticles having different Y concentrations

    Science.gov (United States)

    Üzar, Neslihan

    2018-04-01

    In this study, undoped ZnO and yttrium (Y)-doped ZnO (YZO) nanoparticles having different Y dopant concentrations (Zn1- x Y x O; x = 0.005, 0.01, 0.015, 0.02) were successfully synthesized by sol-gel dip-coating method. Structural characterizations of the obtained samples were examined with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD) analyses. SEM analysis shows that the synthesized nanoparticles are mostly dot-like structures. The sizes of nanostructures decrease with increasing Y-doping concentration up to 2 mol % Y and XRD results show that all of samples have wurtzite hexagonal structure of ZnO with (002) c-plane orientation. According to EDS results pure YZO samples are obtained. Optical transmittances of all samples were investigated in the range of 350-750 nm at room temperature. The average optical transmittances of YZO samples in the visible region are approximately over 90%, but the transmittance starts to decrease for Zn0.98Y0.02O sample. Also, it was observed that the optical transmittances of Y-doped samples are higher than that of undoped ZnO. The electrical properties of YZO samples were obtained by resistance measurements at room temperature. The resistivity of samples was found to be 2.25 × 10-3, 1.43 × 10-3, 7.8 × 10-3, and 1.3 × 10-3 Ω-cm for Zn0.995Y0.005O, Zn0.99Y0.01O, Zn0.985Y0.015O and Zn0.98Y0.02O, respectively. All these results show that surface, structural, electrical and optical properties of ZnO samples can be improved with doping Y up to 2 mol % concentrations.

  18. Room temperature synthesis of Mn{sup 2+} doped ZnS d-dots and observation of tunable dual emission: Effects of doping concentration, temperature, and ultraviolet light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Kole, A. K.; Kumbhakar, P. [Nanoscience Laboratory, Department of Physics, National Institute of Technology, Durgapur 713209, West Bengal (India); Tiwary, C. S. [Department of Materials Engineering, Indian Institute of Science (IISc.), Bangalore 560012 (India)

    2013-03-21

    Mn{sup 2+} doped (0-50.0 molar %) ZnS d-dots have been synthesized in water medium by using an environment friendly low cost chemical technique. Tunable dual emission in UV and yellow-orange regions is achieved by tailoring the Mn{sup 2+} doping concentration in the host ZnS nanocrystal. The optimum doping concentration for achieving efficient photoluminescence (PL) emission is determined to be {approx}1.10 (at. %) corresponding to 40.0 (molar %) of Mn{sup 2+} doping concentration used during synthesis. The mechanism of charge transfer from the host to the dopant leading to the intensity modulated tunable (594-610 nm) yellow-orange PL emission is straightforwardly understood as no capping agent is used. The temperature dependent PL emission measurements are carried out, viz., in 1.10 at. % Mn{sup 2+} doped sample and the experimental results are explained by using a theoretical PL emission model. It is found that the ratio of non-radiative to radiative recombination rates is temperature dependent and this phenomenon has not been reported, so far, in Mn{sup 2+} doped ZnS system. The colour tuning of the emitted light from the samples are evident from the calculated chromaticity coordinates. UV light irradiation for 150 min in 40.0 (molar %) Mn{sup 2+} doped sample shows an enhancement of 33% in PL emission intensity.

  19. Control of oxygen vacancies and Ce+3 concentrations in doped ceria nanoparticles via the selection of lanthanide element

    International Nuclear Information System (INIS)

    Shehata, N.; Meehan, K.; Hudait, M.; Jain, N.

    2012-01-01

    The effect of lanthanides that have positive association energies with oxygen vacancies, such as samarium and neodymium, and the elements with negative association energies, such as holmium and erbium, on ionization state of cerium and, consequentially, the oxygen vacancy concentration in doped ceria nanoparticles are investigated in this article. Structural and optical characterizations of the doped and undoped ceria nanoparticles, synthesized using chemical precipitation, are carried out using transmission electron microscopy, X-ray diffractometry, optical absorption spectroscopy, and fluorescence spectroscopy. It is deduced that the negative association energy dopants decrease the conversion of Ce +4 into Ce +3 and, hence, scavenge the oxygen vacancies, evidenced by the observed increase in the allowed direct bandgap, decrease in the integrated fluorescence intensity, and increased the size of doped nanoparticles. The opposite trends are obtained when the positive association dopants are used. It is concluded that the determining factor as to whether a lanthanide dopant in ceria acts as a generator or scavenger of oxygen vacancies in ceria nanoparticles is the sign of the association energy between the element and the oxygen vacancies. The ability to tailor the ionization state of cerium and the oxygen vacancy concentration in ceria has applications in a broad range of fields, which include catalysis, biomedicine, electronics, and environmental sensing.

  20. Microfluidic ultralow interfacial tensiometry with magnetic particles.

    Science.gov (United States)

    Tsai, Scott S H; Wexler, Jason S; Wan, Jiandi; Stone, Howard A

    2013-01-07

    We describe a technique that measures ultralow interfacial tensions using paramagnetic spheres in a co-flow microfluidic device designed with a magnetic section. Our method involves tuning the distance between the co-flowing interface and the magnet's center, and observing the behavior of the spheres as they approach the liquid-liquid interface-the particles either pass through or are trapped by the interface. Using threshold values of the magnet-to-interface distance, we make estimates of the two-fluid interfacial tension. We demonstrate the effectiveness of this technique for measuring very low interfacial tensions, O(10(-6)-10(-5)) N m(-1), by testing solutions of different surfactant concentrations, and we show that our results are comparable with measurements made using a spinning drop tensiometer.

  1. Thermal lens study of thermo-optical properties and concentration quenching of Er3+-doped lead pyrophosphate based glasses

    Energy Technology Data Exchange (ETDEWEB)

    Santos, C. C. [Universidade Federal do Ceara, Ceara, Brazil; Rocha, U. [Grupo de Fotônica e Fluidos Complexos, Instituto de Física, Brazil; Guedes, Ilde [Universidade Federal do Ceara, Ceara, Brazil; Vermelho, M. V. D. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil; Boatner, Lynn A [ORNL; Jacinto, C. [Instituto de Fisica, Universidade Federal de Alagoas, Brazil

    2012-01-01

    In this work, we have used the thermal lens technique combined with conventional spectroscopy to characterize the thermo-optical properties of Er3+-doped lead pyrophosphate-based glasses. More precisely, we have investigated and quantified experimentally the fluorescence quantum efficiencies of the Er3+ levels, and we describe the role of concentration quenching effects. The fluorescence quantum efficiency of the 4I13/2 level is very high when compared to other phosphate glasses, while that of the green-coupled levels is very small. Other important photonic materials parameters, such as the thermal diffusivity and temperature coefficient of the optical path length change, were obtained and compared with those of other glass systems. The cumulative results obtained here for the Er-doped lead pyrophosphate glass show that this material is a good candidate for photonic applications with a characteristic Er3+ infrared emission around 1550 nm.

  2. Defect-induced luminescence in sol-gel silica samples doped with Co(II) at different concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Sandoval, S. [Centro de Investigacion y Estudios Avanzados, Queretaro, Apdo. Postal 1-798, Queretaro, Qro. 76001 (Mexico); Estevez, M. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico); Pacheco, S. [Instituto Mexicano del Petroleo, Av. 100 metros (Mexico); Vargas, S. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico); Rodriguez, R. [Fisica Aplicada y Tecnologia Avanzada, UNAM, Apdo. Postal 1-1010, Queretaro, Qro. 76000 (Mexico)], E-mail: rogelior@servidor.unam.mx

    2007-12-20

    The defect-induced luminescence properties of silica samples prepared by the sol-gel method and doped with Co(II) are reported. Silica monoliths doped with different concentrations of Co(II) were laser irradiated (He-Ne 632.8 nm) producing fluorescence. However, this fluorescence is exponentially reduced with the irradiation time, to practically disappear. The rate the fluorescence decays can be well modeled with a double exponential function of the irradiation time, containing two different relaxation times; a baseline is also required to take into account some residual fluorescence. The characteristic times involved in this luminescence quenching process are in the range of seconds. This luminescence suppression can be associated to the local heating produced by the laser irradiation when focused in a small area (2 {mu}m in diameter) on the sample. This heating process reduces physical (grain boundaries, surface states) and chemical (oxygen vacancies produced by the dopant) defects in the sample.

  3. Effects of Mn, Cu doping concentration to the properties of magnetic nanoparticles and arsenic adsorption capacity in wastewater

    International Nuclear Information System (INIS)

    Thi, Tran Minh; Trang, Nguyen Thi Huyen; Van Anh, Nguyen Thi

    2015-01-01

    Highlights: • Investigation the decrease of saturate magnetic moment of Fe 3 O 4 over time. • Substitution of Mn, Cu ions into Fe position to create stable properties of materials. • Investigate the surface and mesopore structure of nanoparticles. • The arsenic adsorption capacity of Cu doped Fe 3 O 4 nanomaterials is higher than of Fe 3 O 4 and Mn doped Fe 3 O 4 nanomaterials. - Abstract: The research results of Fe 3 O 4 and Mn, Cu doped Fe 3 O 4 nanomaterials synthesized by a chemical method for As(III) wastewater treatment are presented in this paper. The X-ray diffraction patterns and transmission electron microscopy images showed that samples had the cubic spinel structure with the grain sizes were varied from 9.4 nm to 18.1 nm. The results of vibrating sample magnetometer measurements at room temperature showed that saturation magnetic moments of Fe 1−x Cu x Fe 2 O 4 and Fe 1−x Mn x Fe 2 O 4 samples decreased from 65.9 emu/g to 53.2 emu/g and 65.9 emu/g to 61.5 emu/g, respectively, with the increase of Cu, Mn concentrations from 0.0 to 0.15. The nitrogen adsorption–desorption isotherm of a typical Fe 3 O 4 sample at 77 K was studied in order to investigate the surface and porous structure of nanoparticles by BET method. The specific surface area of Fe 3 O 4 magnetic nanoparticles was calculated about of 100.2 m 2 /g. The pore size distribution of about 15–20 nm calculated by the BJH (Barrett, Joyner, and Halendar) method at a relative pressure P/P 0 of about 1. Although the saturation magnetic moments of samples decreased when the increase of doping concentration, but the arsenic adsorption capacity of Cu doped Fe 3 O 4 nanoparticles is better than that of Fe 3 O 4 and Mn doped Fe 3 O 4 nanoparticles in a solution with pH = 7. In the solution with a pH > 14, the arsenic adsorption of magnetic nanoparticles is insignificant

  4. Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

    Science.gov (United States)

    Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

    2015-12-01

    The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

  5. Concentration and wavelength dependent frequency downshifting photoluminescence from a Tb3+ doped yttria nano-phosphor: A photochromic phosphor

    Science.gov (United States)

    Yadav, Ram Sagar; Rai, Shyam Bahadur

    2018-03-01

    In this article, the Tb3+ doped Y2O3 nano-phosphor has been synthesized through solution combustion method. The structural measurements of the nano-phosphor have been carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) techniques, which reveal nano-crystalline nature. The Fourier transform infrared (FTIR) measurements reveal the presence of different molecular species in the nano-phosphor. The UV-Vis-NIR absorption spectrum of the nano-phosphor shows large number of bands due to charge transfer band (CTB) and 4f-4f electronic transitions of Tb3+ ion. The Tb3+ doped Y2O3 nano-phosphor emits intense green downshifting photoluminescence centered at 543 nm due to 5D4 → 7F5 transition on excitation with 350 nm. The emission intensity of the nano-phosphor is optimized at 1.0 mol% concentration of Tb3+ ion. When the as-synthesized nano-phosphor is annealed at higher temperature the emission intensity of the nano-phosphor enhances upto 5 times. The enhancement in the emission intensity is due to an increase in crystallinity of the nano-phosphor, reduction in surface defects and optical quenching centers. The CIE diagram reveals that the Tb3+ doped nano-phosphor samples show the photochromic nature (color tunability) with a change in the concentration of Tb3+ ion and excitation wavelength. The lifetime measurement indicates an increase in the lifetime for the annealed sample. Thus, the Tb3+ doped Y2O3 nano-phosphor may be used in photochromic displays and photonic devices.

  6. Ultra-low temperature curable nano-silver conductive adhesive for piezoelectric composite material

    Science.gov (United States)

    Yan, Chao; Liao, Qingwei; Zhou, Xingli; Wang, Likun; Zhong, Chao; Zhang, Di

    2018-01-01

    Limited by the low thermal resistance of composite material, ultra-low temperature curable conductive silver adhesive with curing temperature less than 100 °C needed urgently for the surface conduction treatment of piezoelectric composite material. An ultra-low temperature curable nano-silver conductive adhesive with high adhesion strength for the applications of piezoelectric composite material was investigated. The crystal structure of cured adhesive, SEM/EDS analysis, thermal analysis, adhesive properties and conductive properties of different content of nano-silver filler or micron-silver doping samples were studied. The results show that with 60 wt.% nano-silver filler the ultra-low temperature curable conductive silver adhesive had the relatively good conductivity as volume resistivity of 2.37 × 10-4 Ω cm, and good adhesion strength of 5.13 MPa. Minor micron-doping (below 15 wt.%) could improve conductivity, but would decrease other properties. The ultra-low temperature curable nano-silver conductive adhesive could successfully applied to piezoelectric composite material.

  7. Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

    Energy Technology Data Exchange (ETDEWEB)

    Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa

    2016-11-30

    Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in Zn

  8. Impact of concentration and Si doping on the properties and phase transformation behavior of nanocrystalline alumina prepared via solvothermal synthesis

    International Nuclear Information System (INIS)

    Mekasuwandumrong, Okorn; Tantichuwet, Panutin; Chaisuk, Choowong; Praserthdam, Piyasan

    2008-01-01

    Solvothermal reaction of 20 g aluminum isopropoxide (AIP) in mineral oil at 300 deg. C for 2 h gave χ-alumina showing high thermal stability while the reaction with higher amounts of starting AIP (30 and 40 g) contributed contamination of pseudoboehmite. The χ-alumina thus obtained directly transformed into α-alumina completely at approximately 1400 deg. C bypassing the other transition alumina phases whereas some part of the contaminated product transformed to γ-alumina through θ-alumina and finally α-alumina. When silicon was doped in the alumina matrix (5, 10, 20 and 50 at.%) using tetraethylorthosilicate as the silicon (Si) precursor, χ-alumina was still observed without any contaminations at low concentration doping (5-20 at.%). Amorphous structure was obtained by doping 50 at.% Si. The phase transformation temperature was shifted to the high temperature after loading the Si. The α-phase transformation did not go to completion even after calcinations at 1500 deg. C. This could be due to the incorporation of Si atom in alumina lattice forming SiO 2 -Al 2 O 3 solid solution

  9. Wideband and flat-gain amplifier based on high concentration erbium-doped fibres in parallel double-pass configuration

    International Nuclear Information System (INIS)

    Hamida, B A; Cheng, X S; Harun, S W; Naji, A W; Arof, H; Al-Khateeb, W; Khan, S; Ahmad, H

    2012-01-01

    A wideband and flat gain erbium-doped fibre amplifier (EDFA) is demonstrated using a hybrid gain medium of a zirconiabased erbium-doped fibre (Zr-EDF) and a high concentration erbium-doped fibre (EDF). The amplifier has two stages comprising a 2-m-long ZEDF and 9-m-long EDF optimised for C- and L-band operations, respectively, in a double-pass parallel configuration. A chirp fibre Bragg grating (CFBG) is used in both stages to ensure double propagation of the signal and thus to increase the attainable gain in both C- and L-band regions. At an input signal power of 0 dBm, a flat gain of 15 dB is achieved with a gain variation of less than 0.5 dB within a wide wavelength range from 1530 to 1605 nm. The corresponding noise figure varies from 6.2 to 10.8 dB within this wavelength region.

  10. Evaluation of surface energy state distribution and bulk defect concentration in DSSC photoanodes based on Sn, Fe, and Cu doped TiO{sub 2}

    Energy Technology Data Exchange (ETDEWEB)

    Ako, Rajour Tanyi [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Ekanayake, Piyaisiri, E-mail: piyasiri.ekanayake@ubd.edu.bn [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Young, David James [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research -A*STAR, 3 Research Link, 117602 (Singapore); Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Locked Bag 4, Maroochydore DC, Queensland, 4558 (Australia); Hobley, Jonathan [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Chellappan, Vijila [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Tan, Ai Ling [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam); Gorelik, Sergey; Subramanian, Gomathy Sandhya [Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research - A*STAR, 3 Research Link, 117602 (Singapore); Lim, Chee Ming [Faculty of Science, Universiti Brunei Darussalam, Jalan Tungku Link, BE1410, Negara (Brunei Darussalam)

    2015-10-01

    Graphical abstract: - Highlights: • The structural, optical and optoelectronic properties of 1 mol.% Fe, Sn and Cu doped TiO{sub 2} have been compared. • Transient lifetimes for pure TiO{sub 2} and Sn doped TiO{sub 2} were considerably shorter than Fe and Cu doped TiO{sub 2}. • A good correlation between the bulk defects and transient decay for the doped TiO{sub 2} powders was observed. • Photon to current conversion efficiency of DSSC based on the metal doped TiO{sub 2} were in order Sn-TiO{sub 2} > Cu-TiO{sub 2} > Pure >> Fe-TiO{sub 2}. • DSSC based on Fe doped photoanodes is limited by a high concentration of surface free holes observed at 433 nm. - Abstract: Electron transfer dynamics in the oxide layers of the working electrodes in both dye-sensitized solar cells and photocatalysts greatly influences their performance. A proper understanding of the distribution of surface and bulk energy states on/in these oxide layers can provide insights into the associated electron transfer processes. Metal ions like Iron (Fe), Copper (Cu) and Tin (Sn) doped onto TiO{sub 2} have shown enhanced photoactivity in these processes. In this work, the structural, optical and transient properties of Fe, Cu and Sn doped TiO{sub 2} nanocrystalline powders have been investigated and compared using EDX, Raman spectroscopy, X-ray Photoelectron spectroscopy (XPS), and Transient Absorption spectroscopy (TAS). Surface free energy states distributions were probed using Electrochemical Impedance spectroscopy (EIS) on Dye Sensitized Solar Cells (DSSC) based on the doped TiO{sub 2} photoanodes. Raman and XPS Ti2p{sub 3/2} peak shifts and broadening showed that the concentration of defects were in the order: Cu doped TiO{sub 2} > Fe doped TiO{sub 2} > Sn doped TiO{sub 2} > pure TiO{sub 2}. Nanosecond laser flash photolysis of Fe and Cu doped TiO{sub 2} indicated slower transient decay kinetics than that of Sn doped TiO{sub 2} or pure TiO{sub 2}. A broad absorption peak and fast

  11. Compensation of native donor doping in ScN: Carrier concentration control and p-type ScN

    Science.gov (United States)

    Saha, Bivas; Garbrecht, Magnus; Perez-Taborda, Jaime A.; Fawey, Mohammed H.; Koh, Yee Rui; Shakouri, Ali; Martin-Gonzalez, Marisol; Hultman, Lars; Sands, Timothy D.

    2017-06-01

    Scandium nitride (ScN) is an emerging indirect bandgap rocksalt semiconductor that has attracted significant attention in recent years for its potential applications in thermoelectric energy conversion devices, as a semiconducting component in epitaxial metal/semiconductor superlattices and as a substrate material for high quality GaN growth. Due to the presence of oxygen impurities and native defects such as nitrogen vacancies, sputter-deposited ScN thin-films are highly degenerate n-type semiconductors with carrier concentrations in the (1-6) × 1020 cm-3 range. In this letter, we show that magnesium nitride (MgxNy) acts as an efficient hole dopant in ScN and reduces the n-type carrier concentration, turning ScN into a p-type semiconductor at high doping levels. Employing a combination of high-resolution X-ray diffraction, transmission electron microscopy, and room temperature optical and temperature dependent electrical measurements, we demonstrate that p-type Sc1-xMgxN thin-film alloys (a) are substitutional solid solutions without MgxNy precipitation, phase segregation, or secondary phase formation within the studied compositional region, (b) exhibit a maximum hole-concentration of 2.2 × 1020 cm-3 and a hole mobility of 21 cm2/Vs, (c) do not show any defect states inside the direct gap of ScN, thus retaining their basic electronic structure, and (d) exhibit alloy scattering dominating hole conduction at high temperatures. These results demonstrate MgxNy doped p-type ScN and compare well with our previous reports on p-type ScN with manganese nitride (MnxNy) doping.

  12. Growth and scintillation properties of Pr doped YAP with different Pr concentrations

    International Nuclear Information System (INIS)

    Yanagida, Takayuki; Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki; Yamaji, Akihiro; Yokota, Yuui; Yoshikawa, Akira

    2010-01-01

    Pr 3+ 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down (μ-PD) method. Pr 3+ 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The μ-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under 137 Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400±2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr 3+ 5d-4f transition.

  13. Growth and scintillation properties of Pr doped YAP with different Pr concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki, E-mail: t_yanagi@tagen.tohoku.ac.j [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Kamada, Kei; Fujimoto, Yutaka; Sugiyama, Makoto; Furuya, Yuki [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yamaji, Akihiro [New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Yokota, Yuui [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe), Tohoku University, 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan)

    2010-11-21

    Pr{sup 3+} 0.2, 0.75, and 3 mol% doped YAP single crystalline scintillators were grown by using the micro-pulling down ({mu}-PD) method. Pr{sup 3+} 0.05 mol% doped YAP was also prepared by using the Czochralski method. In transmittance spectra, 4f-5d absorption line appeared at 230 nm. The {mu}-PD grown crystals showed intense emission at 290 nm while the Czochralski grown one showed an emission peak at 245 nm in radio luminescence spectra under X-ray excitation. Among them, the Czochralski grown one exhibited the highest light yield under {sup 137}Cs 662 keV excitation and the absolute light yield of this sample was estimated to be 20400{+-}2000 ph/MeV. The decay time constants of these scintillators were around 10 ns due to Pr{sup 3+} 5d-4f transition.

  14. Passivation of phosphorus diffused silicon surfaces with Al2O3: Influence of surface doping concentration and thermal activation treatments

    International Nuclear Information System (INIS)

    Richter, Armin; Benick, Jan; Kimmerle, Achim; Hermle, Martin; Glunz, Stefan W.

    2014-01-01

    Thin layers of Al 2 O 3 are well known for the excellent passivation of p-type c-Si surfaces including highly doped p + emitters, due to a high density of fixed negative charges. Recent results indicate that Al 2 O 3 can also provide a good passivation of certain phosphorus-diffused n + c-Si surfaces. In this work, we studied the recombination at Al 2 O 3 passivated n + surfaces theoretically with device simulations and experimentally for Al 2 O 3 deposited with atomic layer deposition. The simulation results indicate that there is a certain surface doping concentration, where the recombination is maximal due to depletion or weak inversion of the charge carriers at the c-Si/Al 2 O 3 interface. This pronounced maximum was also observed experimentally for n + surfaces passivated either with Al 2 O 3 single layers or stacks of Al 2 O 3 capped by SiN x , when activated with a low temperature anneal (425 °C). In contrast, for Al 2 O 3 /SiN x stacks activated with a short high-temperature firing process (800 °C) a significant lower surface recombination was observed for most n + diffusion profiles without such a pronounced maximum. Based on experimentally determined interface properties and simulation results, we attribute this superior passivation quality after firing to a better chemical surface passivation, quantified by a lower interface defect density, in combination with a lower density of negative fixed charges. These experimental results reveal that Al 2 O 3 /SiN x stacks can provide not only excellent passivation on p + surfaces but also on n + surfaces for a wide range of surface doping concentrations when activated with short high-temperature treatments

  15. Effect of doping of OH- and CN- on the liberation of I2 molecules in KI by gamma-irradiation, impurity concentration effect

    International Nuclear Information System (INIS)

    Shirke, A.K.; Pode, R.B.; Deshmukh, B.T.

    1996-01-01

    Photodecomposition of pure and doped KI powder (KI:KOH; KI:KCN; Impurity concentration, 100, 300, 500, 700 and 1000 ppm) to produce free I 2 molecules during gamma irradiation is studied with the help of absorption and IR measurements. Large number of I 2 molecules are formed in pure KI as compared to the doped samples. Hydroxide impurity increases the rate of liberation of I 2 molecules whereas the cyanide impurity decreases the rate of liberation of I 2 molecules. (Author)

  16. Electron transport investigation of layered MoO3 oxides doped with different concentrations of Nb2O5 oxide

    International Nuclear Information System (INIS)

    Al-Khawaja, S.; Kasem, M.

    2008-07-01

    The dc and ac electric conductivity has been studied for numerous samples of molybdenum oxide MoO 3 doped with niobium oxide Nb 2 O 5 elaborated via the solid state reactions. By means of the electric resistivity and dielectricity curves obtained as a function of temperature, and according to the dopant concentration, the behaviour of these compounds has been allocated. Most of the investigated samples, which are insulating at room temperature, have been witnessed to exhibit simultaneously two different electric comportments; metallic and semiconducting within the range of low and high temperatures respectively, designated by a critical temperature related to the nature of the material. Both of these behaviours are attributed electronically to ionic conduction mechanism, occurring in the solid material formed upon doping with Nb 2 O 5 , which is utterly diffused into the layered structure of MoO 3 particularly for x≥40% concentrations and accompanied by relaxation in the dielectric function between 5 Hz and 13 M Hz.(Authors)

  17. Luminescence study of Eu3+ doped GdVO4 nanoparticles: Concentration, particle size, and core/shell effects

    Science.gov (United States)

    Singh, N. Shanta; Ningthoujam, R. S.; Devi, L. Romila; Yaiphaba, N.; Sudarsan, V.; Singh, S. Dorendrajit; Vatsa, R. K.; Tewari, R.

    2008-11-01

    Nanoparticles of GdVO4 doped with Eu3+ and core/shell of GdVO4:Eu3+/GdVO4 are prepared by urea hydrolysis method using ethylene glycol as capping agent as well as reaction medium at 130 °C. Unit cell volume increases when GdVO4 is doped with Eu3+ indicating the substitution of Gd3+ lattice sites by Eu3+. From luminescence study, it is confirmed that there is no particle size effect on emission positions of Eu3+. Optimum luminescence intensity is found to be in 5-10 at. % Eu3+. Above these concentrations, luminescence intensity decreases due to concentration quenching effect. There is an enhancement in luminescence intensity of core/shell nanoparticles. This has been attributed to the reduction in surface inhomogenities of Eu3+ surroundings by bonding to GdVO4 shell. The lifetime for D50 level increases with annealing and core/shell formation.

  18. Effects of annealing gas and drain doping concentration on electrical properties of Ge-source/Si-channel heterojunction tunneling FETs

    Science.gov (United States)

    Bae, Tae-Eon; Wakabayashi, Yuki; Nakane, Ryosho; Takenaka, Mitsuru; Takagi, Shinichi

    2018-04-01

    Improvement in the performance of Ge-source/Si-channel heterojunction tunneling FETs (TFETs) with high on-current/off-current (I on/I off) ratio and steep subthreshold swing (SS) is demonstrated. In this paper, we experimentally examine the effects of gas ambient [N2 and forming gas (4% H2/N2)] and a doping concentration in the drain regions on the electrical characteristics of Ge/Si heterojunction TFETs. The minimum SS (SSmin) of 70.9 mV/dec and the large I on/I off ratio of 1.4 × 107 are realized by postmetallization annealing in forming gas. Also, the steep SSmin and averaged SS (SSavr) values of 64.2 and 78.4 mV/dec, respectively, are obtained in low drain doping concentration. This improvement is attributable to the reduction in interface state density (D it) in the channel region and to the low leakage current in the drain region.

  19. Mechanical properties of pure and doped InP single crystals under concentrated loading

    International Nuclear Information System (INIS)

    Boyarskaya, Yu.S.; Grabko, D.Z.; Medinskaya, M.I.; Palistrant, N.A.

    1997-01-01

    The mechanical properties of pure and doped (Fe, Zn, Sn) InP single crystals were investigated in the temperature interval from 293 to 600 K. It was shown that impurity hardening (the microhardness increase) was more pronounced at elevated temperatures than at 293 K. This is conditioned by braking of the moving dislocations with impurities which is more observed in the the high temperature region. The obvious anisotropy of the scratch hardness was revealed at room temperature for the (001) face of crystals under investigation. This anisotropy decreased sharply in increasing the temperature from 293 to 600 K

  20. Dopant concentration and thermoluminescence (TL) properties of tailor-made Ge-doped SiO2 fibres

    International Nuclear Information System (INIS)

    Zahaimi, Nurul Arina; Ooi Abdullah, Mohd Haris Ridzuan; Zin, Hafiz; Abdul Rahman, Ahmad Lutfi; Hashim, Suhairul; Saripan, Mohd Iqbal; Paul, Mukul Chandra; Bradley, D.A.; Abdul Rahman, Ahmad Taufek

    2014-01-01

    Study focuses on characterisation of diverse concentrations of Ge-doped SiO 2 fibre as a potential thermoluminescence (TL) system for radiotherapy dosimetry. Irradiations were made using a linear accelerator providing 6 MV and 10 MV photon beams. Investigation has been done on various doped core diameter Ge-doped SiO 2 glass fibres such as commercial telecommunication fibres of 8 µm and 9 µm (CorActive High Tech, Canada), tailor-made fibres of 23 and 50 µm produced by the Central Glass and Ceramic Research Institute Kolkata, and tailor-made fibres of 11 µm produced by the University of Malaya Photonics Research Centre. The fibres have been characterised for TL sensitivity, reproducibility, dose- and energy-dependence. The area under the TL glow curve increases with increasing core diameter. For repeat irradiations at a fixed dose the dosimeter produces a flat response better than 4% (1SD) of the mean of the TL distribution. Minimal TL signal fading was found, less than 0.5% per day post irradiation. Linearity of TL has been observed with a correlation coefficient (r 2 ) of better than 0.980 (at 95% confidence level). For particular dopant concentrations, the least square fits show the change in TL yield, in counts per second per unit mass, obtained from 50 µm core diameter fibres irradiated at 6 MV of photon to be 8 times greater than that of 8 µm core diameter fibre. With respect to energy response, the TL yield at 10 MV decreases by∼5% compared to that at 6 MV, primarily due to the lower mass energy absorption coefficient at higher photon energy. These early results indicate that selectively screened fibres can be developed into a promising TL system, offering high spatial resolution capability and, with this, verification of complex radiotherapy dose distributions. - Highlights: • We examined the TL glow curve intensity for various diameter sizes of germanium doped silica glass fibre. • TL sensitivity increased with the increase of fibre core

  1. Crystal growth and scintillation properties of Pr-doped oxyorthosilicate for different concentration

    Energy Technology Data Exchange (ETDEWEB)

    Totsuka, Daisuke, E-mail: totsuka@mail.tagen.tohoku.ac.jp [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Nihon Kessho Kogaku Co. Ltd (Japan); Yanagida, Takayuki [New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan); Fujimoto, Yutaka [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Pejchal, Jan [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Institute of Physics AS CR, Cukrovarnicka 10, Prague 6, 162-53 (Czech Republic); Yokota, Yuui [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); Yoshikawa, Akira [Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577 (Japan); New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579 (Japan)

    2011-07-01

    0.05, 0.1 and 0.25 mol% Pr (with respect to Lu) doped Lu{sub 2}SiO{sub 5} (LSO) single crystals were grown by the micro-pulling down ({mu}-PD) method. The grown crystals were transparent, and a slight segregation of Pr{sup 3+} was observed both in the crystal cross-section and growth direction. Transparency in the visible wavelength range was about 80% in all the crystals. Intense absorptions related with the Pr{sup 3+} 4f-5d transitions were observed around 230 and 255 nm, and weak absorptions due to the 4f-4f transitions were detected around 450 nm. In radioluminescence spectra, the Pr{sup 3+} 5d-4f transitions were observed around 275and 310 nm, and emissions due to the 4f-4f transition were observed around 500 nm. In the pulse height analysis using {sup 137}Cs gamma-ray excitation, Pr 0.1% doped sample showed the highest light yield of 2,800 ph/MeV. In the decay time measurements using different excitation sources (photoluminescence, X- and gamma-ray), two different processes related to the 5d-4f emission peaks were found. Fast decay component corresponds to direct excitation of Pr{sup 3+} (4-6 ns) and slower component (25 ns) reflects the energy migration process from the host lattice to the emission center.

  2. Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)

    2016-02-29

    In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.

  3. Photoluminescence Spectroscopy of Rhodamine 800 Aqueous Solution and Dye-Doped Polymer Thin-Film: Concentration and Solvent Effects

    Science.gov (United States)

    Le, Khai Q.; Dang, Ngo Hai

    2018-05-01

    This paper investigates solvent and concentration effects on photoluminescence (PL) or fluorescence properties of Rhodamine 800 (Rho800) dyes formed in aqueous solution and polymer thin-film. Various commonly used organic solvents including ethanol, methanol and cyclopentanol were studied at a constant dye concentration. There were small changes in the PL spectra for the different solvents in terms of PL intensity and peak wavelength. The highest PL intensity was observed for cyclopentanol and the lowest for ethanol. The longest peak wavelength was found in cyclopentanol (716 nm) and the shortest in methanol (708 nm). Dissolving the dye powder in the methanol solvent and varying the dye concentration in aqueous solution from the high concentrated solution to highly dilute states, the wavelength tunability was observed between about 700 nm in the dilute state and 730 nm at high concentration. Such a large shift may be attributed to the formation of dye aggregates. Rho800 dye-doped polyvinyl alcohol (PVA) polymer thin-film was further investigated. The PL intensity of the dye in the form of thin-film is lower than that of the aqueous solution form whereas the peak wavelength is redshifted due to the presence of PVA. This paper, to our best knowledge, reports the first study of spectroscopic properties of Rho800 dyes in various forms and provides useful guidelines for production of controllable organic luminescence sources.

  4. Dependence of the up-conversion emission of Li+ co-doped Y2O3:Er3+ films with dopant concentration

    International Nuclear Information System (INIS)

    Meza-Rocha, A.N.; Huerta, E.F.; Caldiño, U.; Carmona-Téllez, S.; Bettinelli, M.; Speghini, A.; Pelli, S.; Righini, G.C.

    2015-01-01

    The effect of dopant concentration on the up-conversion emission, and in particular on the Er 3+ related green and red emissions of spray pyrolysis deposited films of Y 2 O 3 :Er 3+ co-doped with Li + , is reported. Er 3+ concentrations in the films in the range of 1.1–5.6 at% (1.5–14 at% Er 3+ in the spraying solution) were studied, as well as the effect of co-doping them with Li + . Large concentrations of Er 3+ favor the red emission, especially for contents higher than 10 at% in the spraying solution. Li + co-doping improves the green and red emissions up to 365 and 171 times, respectively, depending on the Er 3+ and Li + concentrations. - Highlights: Up-converting Y 2 O 3 :Er 3+ and Y 2 O 3 :Er 3+ , Li + films were deposited by spray pyrolysis. The effect of Li + co-doping on the green and red UC Er 3+ emission is reported. Li + co-doping improves the green and red emission up to 365 and 171 times

  5. Ultralow-loss CMOS copper plasmonic waveguides

    DEFF Research Database (Denmark)

    Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

    2016-01-01

    with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

  6. Concentration dependent spectroscopic properties of Dy3+ ions doped boro-phosphate glasses

    Science.gov (United States)

    Mariyappan, M.; Marimuthu, K.

    2016-05-01

    Dy3+ ions doped boro-phosphate glasses have been synthesized by melt quenching method and characterized through FTIR, absorption and luminescence spectral measurements. The presence of various stretching and bending vibrations of different borate and phosphate groups were identified from the FTIR spectra. In order to examine the electronic band structure of the studied glasses, Optical energy gap (Eopt) and Urbach energy (ΔE) values were estimated from the absorption spectra. The Judd-Ofelt (JO) intensity parameters were calculated to examine the symmetry of the ligand environment around the Dy3+ ions site. The emission spectra exhibit two intense emission bands at around 482 nm (blue) and 574 nm (yellow) corresponding to the 4F9/2→6H15/2 and 4F9/2→6H13/2 transitions respectively. The emission spectra were characterized through Commission International d'Eclairage (CIE) 1931 chromaticity diagram to explore its suitability for WLED applications.

  7. SU-F-T-239: Evaluation of Plastic Scintillator Light Output for Various Lead Doping Concentrations: Towards LET Detection

    International Nuclear Information System (INIS)

    Nusrat, H; Pang, G; Sarfehnia, A

    2016-01-01

    Purpose: This work seeks to develop a beam quality meter using multiple differently doped plastic scintillators that are thus intrinsically beam-quality dependent. Plastic scintillators spontaneously emit visible light upon irradiation; the amount of light produced is dependent on stopping power (closely related to LET) according to Birks’ law. Doping plastic scintillators can be used to tune their sensitivity to specific LET ranges. Methods: GEANT4.10.1 Monte Carlo (MC) was used to evaluate the response of various scintillator dopant combinations. MC radiation transport and scintillator light response were validated against previously published literature. Current work involves evaluating detector response experimentally; to that end, a detector prototype with interchangeable scintillator housing was constructed. Measurement set-up guides light emitted by the scintillator to a photomultiplier tube via a glass taper junction coupled to an optical fiber. The resulting signal is measured by an electrometer, and normalized to dose readout from a diode. Measurements have been done using clinical electron and orthovoltage beams. MC response (simulated scintillator light normalized to dose scored inside the scintillating volume) was evaluated for four different LET radiations for an undoped and 1%Pb doped scintillator (σ=0.85%). Simulated incident electrons included: 0.05, 0.1, 0.2, 6, 12, and 18 MeV; these energies correspond to a range of stopping power (related to LET) values ranging from 1.824 to 11.09 MeVcm"2g"−"1 (SCOL from NIST-ESTAR). Results: Initial MC results show a distinct divergence in scintillator response as LET increases. The response for undoped plastic scintillator indicated a 35.0% increase in signal when going from 18 MeV (low LET) to 0.05 MeV (high LET) while 1%-Pb doped scintillator indicated a 100.9% increase. Conclusion: After validating MC against measurement, simulations will be used to test various concentrations (2%, 4%, 6%) of different

  8. SU-F-T-239: Evaluation of Plastic Scintillator Light Output for Various Lead Doping Concentrations: Towards LET Detection

    Energy Technology Data Exchange (ETDEWEB)

    Nusrat, H [Ryerson University, Toronto, ON (Canada); Pang, G; Sarfehnia, A [Sunnybrook Health Sciences Centre, Toronto, ON (Canada)

    2016-06-15

    Purpose: This work seeks to develop a beam quality meter using multiple differently doped plastic scintillators that are thus intrinsically beam-quality dependent. Plastic scintillators spontaneously emit visible light upon irradiation; the amount of light produced is dependent on stopping power (closely related to LET) according to Birks’ law. Doping plastic scintillators can be used to tune their sensitivity to specific LET ranges. Methods: GEANT4.10.1 Monte Carlo (MC) was used to evaluate the response of various scintillator dopant combinations. MC radiation transport and scintillator light response were validated against previously published literature. Current work involves evaluating detector response experimentally; to that end, a detector prototype with interchangeable scintillator housing was constructed. Measurement set-up guides light emitted by the scintillator to a photomultiplier tube via a glass taper junction coupled to an optical fiber. The resulting signal is measured by an electrometer, and normalized to dose readout from a diode. Measurements have been done using clinical electron and orthovoltage beams. MC response (simulated scintillator light normalized to dose scored inside the scintillating volume) was evaluated for four different LET radiations for an undoped and 1%Pb doped scintillator (σ=0.85%). Simulated incident electrons included: 0.05, 0.1, 0.2, 6, 12, and 18 MeV; these energies correspond to a range of stopping power (related to LET) values ranging from 1.824 to 11.09 MeVcm{sup 2}g{sup −1} (SCOL from NIST-ESTAR). Results: Initial MC results show a distinct divergence in scintillator response as LET increases. The response for undoped plastic scintillator indicated a 35.0% increase in signal when going from 18 MeV (low LET) to 0.05 MeV (high LET) while 1%-Pb doped scintillator indicated a 100.9% increase. Conclusion: After validating MC against measurement, simulations will be used to test various concentrations (2%, 4%, 6%) of

  9. The steady-state and transient electron transport within bulk zinc-blende indium nitride: The impact of crystal temperature and doping concentration variations

    International Nuclear Information System (INIS)

    Siddiqua, Poppy; O'Leary, Stephen K.

    2016-01-01

    Within the framework of a semi-classical three-valley Monte Carlo electron transport simulation approach, we analyze the steady-state and transient aspects of the electron transport within bulk zinc-blende indium nitride, with a focus on the response to variations in the crystal temperature and the doping concentration. We find that while the electron transport associated with zinc-blende InN is highly sensitive to the crystal temperature, it is not very sensitive to the doping concentration selection. The device consequences of these results are then explored.

  10. Advanced Mechanical Properties of a Powder Metallurgy Ti-Al-N Alloy Doped with Ultrahigh Nitrogen Concentration

    Science.gov (United States)

    Shen, J.; Chen, B.; Umeda, J.; Kondoh, K.

    2018-03-01

    Titanium and its alloys are recognized for their attractive properties. However, high-performance Ti alloys are often alloyed with rare or noble-metal elements. In the present study, Ti alloys doped with only ubiquitous elements were produced via powder metallurgy. The experimental results showed that pure Ti with 1.5 wt.% AlN incorporated exhibited excellent tensile properties, superior to similarly extruded Ti-6Al-4V. Further analysis revealed that its remarkably advanced strength could primarily be attributed to nitrogen solid-solution strengthening, accounting for nearly 80% of the strength increase of the material. In addition, despite the ultrahigh nitrogen concentration up to 0.809 wt.%, the Ti-1.5AlN sample showed elongation to failure of 10%. This result exceeds the well-known limitation for nitrogen (over 0.45 wt.%) that causes embrittlement of Ti alloys.

  11. Al-Sn doped ZnO thin film nanosensor for monitoring NO2 concentration

    Directory of Open Access Journals (Sweden)

    G.S. Hikku

    2017-07-01

    Full Text Available The metal oxide semiconductor gas sensor technology is robust and has quick response times. In this work, aluminium and tin co-doped zinc oxide (ASZO thin films were synthesized by a sol–gel dip-coating process as sensors for the greenhouse gas nitrogen dioxide (NO2. The prepared ASZO thin films were characterized using such techniques as X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and photoluminescence (PL emission studies in order to analyze the elemental confirmation, particle size, surface roughness and optical emission properties, respectively. The XRD data reveals the hexagonal structure of ASZO and that the preferential orientation is along 2θ = 36.19°. SEM images of the ASZO thin film exhibit rod-like formations of ASZO on the substrate. The ASZO films show enhanced sensing behaviour, sensing NO2 gas even at 2 ppm at an operating temperature of 170 °C. The response and recovery times were determined to be 30 and 20 s, respectively.

  12. Concentration dependent spectroscopic properties of Dy{sup 3+} ions doped boro-phosphate glasses

    Energy Technology Data Exchange (ETDEWEB)

    Mariyappan, M.; Marimuthu, K., E-mail: mari-ram2000@yahoo.com [Department of Physics, Gandhigram Rural Institute - Deemed University, Gandhigram – 624 302 (India)

    2016-05-23

    Dy{sup 3+} ions doped boro-phosphate glasses have been synthesized by melt quenching method and characterized through FTIR, absorption and luminescence spectral measurements. The presence of various stretching and bending vibrations of different borate and phosphate groups were identified from the FTIR spectra. In order to examine the electronic band structure of the studied glasses, Optical energy gap (E{sub opt}) and Urbach energy (ΔE) values were estimated from the absorption spectra. The Judd-Ofelt (JO) intensity parameters were calculated to examine the symmetry of the ligand environment around the Dy{sup 3+} ions site. The emission spectra exhibit two intense emission bands at around 482 nm (blue) and 574 nm (yellow) corresponding to the {sup 4}F{sub 9/2}→{sup 6}H{sub 15/2} and {sup 4}F{sub 9/2}→{sup 6}H{sub 13/2} transitions respectively. The emission spectra were characterized through Commission International d’Eclairage (CIE) 1931 chromaticity diagram to explore its suitability for WLED applications.

  13. Electrochemical oxidation of tramadol in low-salinity reverse osmosis concentrates using boron-doped diamond anodes.

    Science.gov (United States)

    Lütke Eversloh, Christian; Schulz, Manoj; Wagner, Manfred; Ternes, Thomas A

    2015-04-01

    The electrochemical treatment of low-salinity reverse osmosis (RO) concentrates was investigated using tramadol (100 μM) as a model substance for persistent organic contaminants. Galvanostatic degradation experiments using boron-doped diamond electrodes at different applied currents were conducted in RO concentrates as well as in ultra-pure water containing either sodium chloride or sodium sulfate. Kinetic investigations revealed a significant influence of in-situ generated active chlorine besides direct anodic oxidation. Therefore, tramadol concentrations decreased more rapidly at elevated chloride content. Nevertheless, reduction of total organic carbon (TOC) was found to be comparatively low, demonstrating that transformation rather than mineralization was taking place. Early stage product formation could be attributed to both direct and indirect processes, including demethylation, hydroxylation, dehydration, oxidative aromatic ring cleavage and halogenation reactions. The latter led to various halogenated derivatives and resulted in AOX (adsorbable organic halogens) formation in the lower mg/L-range depending on the treatment conditions. Characterisation of transformation products (TPs) was achieved via MS(n) experiments and additional NMR measurements. Based on identification and quantification of the main TPs in different matrices and on additional potentiostatic electrolysis, a transformation pathway was proposed. Copyright © 2014 Elsevier Ltd. All rights reserved.

  14. Determination of Al concentration in Al doped ZnO using Auger spectra excited by Mo X-rays

    International Nuclear Information System (INIS)

    Toth, J.; Koever, L.; Cserny, I.; Varga, D.

    2006-01-01

    Complete text of publication follows. A good conductor with excellent transparency is of crucial importance for the window layer of CIGS solar cells. Al doped ZnO is a good candidate for this purpose, its conductivity depends on the concentration and chemical state of the Al dopant atoms. It was demonstrated that the non-conventional XPS using Mo X-rays for excitation is a very sensitive tool for the detection of Al, P, Si [1, 2, 3]. The present paper compares the experimental ratios for Zn/Al photoinduced peak intensity ratios obtained using both Al and Mo X-ray excitations. The Mo excited Zn/Al intensity ratios can be determined with higher selectivity and sensitivity than the Zn/Al intensity ratios excited by Al X-rays. The experiments were performed with a hemispherical deflector electron spectrometer [4]. The chemical state of the Al was identified to be close to that in Al 2 O 3 . The atomic concentrations were determined using a calibration curve based on ZnO/Al samples with known composition of Al. The energy dependent efficiency of the electron spectrometer was determined comparing REELS spectra of Cu specimen to standard spectra measured by K. Goto (Nagoya Institute of Technology, Japan). For evaluation of the Al atomic concentrations from the measured photoelectron intensities the photoionisation cross-sections of Band et al [5] and the IMFP data of S. Tanuma et al [6] and C.J. Powell and A. Jablonski [7] were used. (author)

  15. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations.

    Science.gov (United States)

    Bagastyo, Arseto Y; Batstone, Damien J; Kristiana, Ina; Escher, Beate I; Joll, Cynthia; Radjenovic, Jelena

    2014-08-30

    An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10AhL(-1), and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2mgL(-1)). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ=11mgL(-1) at 2.4AhL(-1)), which rapidly decreased to 4mgL(-1). The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25kWhgCOD(-1) and 0.34kWhgCOD(-1), respectively, yet it did not demonstrate any improvement regarding by-products formation. Copyright © 2014 Elsevier B.V. All rights reserved.

  16. Role of dopant concentration, crystal phase and particle size on microbial inactivation of Cu-doped TiO{sub 2} nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Sahu, Manoranjan; Wu Bing; Zhu Liying; Jacobson, Craig; Wang Weining; Jones, Kristen; Goyal, Yogesh; Tang, Yinjie J; Biswas, Pratim, E-mail: pbiswas@wustl.edu [Department of Energy, Environmental and Chemical Engineering, Washington University in St Louis, St Louis, MO 63130 (United States)

    2011-10-14

    The properties of Cu-doped TiO{sub 2} nanoparticles (NPs) were independently controlled in a flame aerosol reactor by varying the molar feed ratios of the precursors, and by optimizing temperature and time history in the flame. The effect of the physico-chemical properties (dopant concentration, crystal phase and particle size) of Cu-doped TiO{sub 2} nanoparticles on inactivation of Mycobacterium smegmatis (a model pathogenic bacterium) was investigated under three light conditions (complete dark, fluorescent light and UV light). The survival rate of M. smegmatis (in a minimal salt medium for 2 h) exposed to the NPs varied depending on the light irradiation conditions as well as the dopant concentrations. In dark conditions, pristine TiO{sub 2} showed insignificant microbial inactivation, but inactivation increased with increasing dopant concentration. Under fluorescent light illumination, no significant effect was observed for TiO{sub 2}. However, when TiO{sub 2} was doped with copper, inactivation increased with dopant concentration, reaching more than 90% (>3 wt% dopant). Enhanced microbial inactivation by TiO{sub 2} NPs was observed only under UV light. When TiO{sub 2} NPs were doped with copper, their inactivation potential was promoted and the UV-resistant cells were reduced by over 99%. In addition, the microbial inactivation potential of NPs was also crystal-phase-and size-dependent under all three light conditions. A lower ratio of anatase phase and smaller sizes of Cu-doped TiO{sub 2} NPs resulted in decreased bacterial survival. The increased inactivation potential of doped TiO{sub 2} NPs is possibly due to both enhanced photocatalytic reactions and leached copper ions.

  17. Evolution of the mechanical and tribological properties of DLC thin films doped with low-concentration hafnium on 316L steel

    Science.gov (United States)

    Qi, Meng; Xiao, Jianrong; Gong, Chenyang; Jiang, Aihua; Chen, Yong

    2018-01-01

    Low concentrations (stainless steel and silicon (1 0 0) substrates by magnetron sputtering to attain superior mechanical and tribological properties. Ar and CH4 were used as source gases. The microstructure, chemical composition, and morphology of the Hf-DLC thin films in various concentrations were analyzed using x-ray diffraction, Raman spectroscopy, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. Results showed that Hf species transferred from the particulate microstructure to Hf carbide phases, and the surface roughness increased monotonically with increasing Hf concentration. Moreover, the hardness and elastic modulus exhibited high values when the doped Hf concentration was 0.42 at%. Similarly, the tribological behaviors and wear life of Hf-DLC thin films had a low friction coefficient and excellent wear resistance at 0.42 at% Hf concentration. Therefore, 0.42 at% Hf is an optimal doping concentration to improve the mechanical and tribological properties of DLC thin films. Generally, the use of low-concentration Hf doping into DLC thin films is novel, and the present results provide guidance for the selection of suitable and effective concentration to optimize Hf-DLC thin films with superior performance.

  18. Effect of annealing and impurity concentration on the TL characteristics of nanocrystalline Mn-doped CaF2

    International Nuclear Information System (INIS)

    Sahare, P.D.; Singh, Manveer; Kumar, Pratik

    2015-01-01

    Nanocrystalline samples of Mn-doped CaF 2 were synthesized by chemical coprecipitation method. The impurity concentration was varied in the range of 0.5–4.0 mol%. The structure of the synthesized material was confirmed using powder XRD analysis. TEM images of the nanoparticles show their size occurring mostly in the range of 35–40 nm, with clusters of some impurity phases formed on annealing of the material at higher temperatures. Detailed studies on TL showed that the structures of glow curves depend on Mn concentrations and annealing temperatures. Optimization of the concentration and annealing temperature showed that the sample (doped with 3.0 mol% and annealed at 673 K) has almost a single dosimetric glow peak appearing at around 492 K. EPR and PL spectra were further studied to understand the reasons for changes in the glow curve structures. All detailed studies on TL, PL and EPR showed that the changes in glow curve structures are caused not only by the stress connected with the difference in ionic radii of host Ca 2+ and the guest impurity Mn 3+ /Mn 2+ , but are also governed by other reasons, like diffusion of atmospheric oxygen and formation of impurity aggregates, such as, MnO 2 , Mn 3 O 4 , etc. This is true not only for nanocrystalline CaF 2 :Mn but could also be so for the bulk CaF 2 :Mn (TLD-400) and would thus help in understanding complex glow curve structure, high fading and the loss of reusability on annealing beyond 673 K. - Highlights: • Nanocrystalline material CaF 2 :Mn is prepared by simple coprecipitation method. • The material is studied by XRD, TEM, ESR, TL and PL techniques. • High impurity concentrations give rise to clusters causing material instability. • Changes in ESR and PL and glow curve structures are studied and explained. • Better characteristics than the bulk make the nanophosphor useful for dosimetry

  19. Aerosol nucleation in an ultra-low ion density environment

    DEFF Research Database (Denmark)

    Pedersen, Jens Olaf Pepke; Enghoff, Martin Andreas Bødker; Paling, Sean M.

    2012-01-01

    Ion-induced nucleation has been studied in a deep underground ultra-low background radiation environment where the role of ions can be distinguished from alternative neutral aerosol nucleation mechanisms. Our results demonstrate that ions have a significant effect on the production of small...... sulfuric acid–water clusters over a range of sulfuric acid concentrations although neutral nucleation mechanisms remain evident at low ionization levels. The effect of ions is found both to enhance the nucleation rate of stable clusters and the initial growth rate. The effects of possible contaminations...

  20. The optoelectronic properties and role of Cu concentration on the structural and electrical properties of Cu doped ZnO nanoparticles

    Science.gov (United States)

    Omri, K.; Bettaibi, A.; Khirouni, K.; El Mir, L.

    2018-05-01

    In the current study, we synthesized a Cu-doped ZnO (CZO) nanoparticles material using a sol-gel method with different doping concentrations of Cu (0, 2, 3 and 4 at.%). The control of the Cu concentration on structural, electrical and optical properties of CZO nanoparticles was investigated in detail. The XRD analysis of the CZO nanoparticles reveals the formation of ZnO hexagonal wurtzite structure for all samples which confirm the incorporation of Cu2+ ions into the ZnO lattice by substitution. Furthermore, CZO nanoparticles showed a small red shift of absorption band with the incorporation of Cu from 0 to 4 at.%; i.e. a decreased band gap value from 3.34 eV to 3.27 eV with increasing of Cu doping content. The frequency dispersion of the electric conductivity were studied using the Jonscher universal power law, according to relation σ(ω) = σDC + A ωs(T). Alternative current conductivity increases with increasing Cu content in spite of the decrease the activation energy with copper loading. It was found that the conductivity reached its maximum value for critical Cu concentration of 3 at.%. The frequency relaxation phenomenon was also investigated and all results were discussed in term of the copper doping concentration.

  1. Influence of Doping Concentration on Dielectric, Optical, and Morphological Properties of PMMA Thin Films

    Directory of Open Access Journals (Sweden)

    Lyly Nyl Ismail

    2012-01-01

    Full Text Available PMMA thin films were deposited by sol gel spin coating method on ITO substrates. Toluene was used as the solvent to dissolve the PMMA powder. The PMMA concentration was varied from 30 ~ 120 mg. The dielectric properties were measured at frequency of 0 ~ 100 kHz. The dielectric permittivity was in the range of 7.3 to 7.5 which decreased as the PMMA concentration increased. The dielectric loss is in the range of 0.01 ~ –0.01. All samples show dielectric characteristics which have dielectric loss is less than 0.05. The optical properties for thin films were measured at room temperature across 200 ~ 1000 nm wavelength region. All samples are highly transparent. The energy band gaps are in the range of 3.6 eV to 3.9 eV when the PMMA concentration increased. The morphologies of the samples show that all samples are uniform and the surface roughness increased as the concentration increased. From this study, it is known that, the dielectric, optical, and morphology properties were influenced by the amount of PMMA concentration in the solution.

  2. Diffuse Surface Scattering in the Plasmonic Resonances of Ultralow Electron Density Nanospheres.

    Science.gov (United States)

    Monreal, R Carmina; Antosiewicz, Tomasz J; Apell, S Peter

    2015-05-21

    Localized surface plasmon resonances (LSPRs) have recently been identified in extremely diluted electron systems obtained by doping semiconductor quantum dots. Here, we investigate the role that different surface effects, namely, electronic spill-out and diffuse surface scattering, play in the optical properties of these ultralow electron density nanosystems. Diffuse scattering originates from imperfections or roughness at a microscopic scale on the surface. Using an electromagnetic theory that describes this mechanism in conjunction with a dielectric function including the quantum size effect, we find that the LSPRs show an oscillatory behavior in both position and width for large particles and a strong blue shift in energy and an increased width for smaller radii, consistent with recent experimental results for photodoped ZnO nanocrystals. We thus show that the commonly ignored process of diffuse surface scattering is a more important mechanism affecting the plasmonic properties of ultralow electron density nanoparticles than the spill-out effect.

  3. Influence of Y doping concentration on the properties of nanostructured MxZn1-xO (M=Y) thin film deposited by nebulizer spray pyrolysis technique

    Science.gov (United States)

    Mariappan, R.; Ponnuswamy, V.; Chandra Bose, A.; Suresh, R.; Ragavendar, M.

    2014-09-01

    Yttrium doped Zinc Oxide (YxZn1-xO) thin films deposited at a substrate temperature 400 °C. The effect of substrate temperature on the structural, surface morphology, compositional, optical and electrical properties of YxZn1-xO thin films was studied. X-ray diffraction studies show that all films are polycrystalline in nature with hexagonal crystal structure having highly textured (002) plane parallel to the surface of the substrate. The structural parameters, such as lattice constants (a and c), crystallite size (D), dislocation density (δ), microstrain (σ) and texture coefficient were calculated for different yttrium doping concentrations (x). High resolution scanning electron microscopy measurements reveal that the surface morphology of the films change from platelet like grains to hexagonal structure with grain size increase due to the yttrium doping. Energy dispersive spectroscopy confirms the presence of Y, Zn and O elements in the films prepared. Optical studies showed that all samples have a strong optical transmittance higher than 70% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the Y doping concentration increased. This result shows that the band gap is slightly decreased from 3.10 to 2.05 eV with increase of the yttrium doping concentrations (up to 7.5%) and then slightly increased. Room temperature PL measurements were done and the band-to-band emission energies of films were determined and reported. The complex impedance of the 10%Y doped ZnO film shows two distinguished semicircles and the diameter of the arcs got decreased in diameter as the temperature increases from 70 to 175 °C.

  4. Impact of doped boron concentration in emitter on high- and low-dose-rate damage in lateral PNP transistors

    International Nuclear Information System (INIS)

    Zheng Yuzhan; Lu Wu; Ren Diyuan; Wang Yiyuan; Wang Zhikuan; Yang Yonghui

    2010-01-01

    The characteristics of radiation damage under a high or low dose rate in lateral PNP transistors with a heavily or lightly doped emitter is investigated. Experimental results show that as the total dose increases, the base current of transistors would increase and the current gain decreases. Furthermore, more degradation has been found in lightly-doped PNP transistors, and an abnormal effect is observed in heavily doped transistors. The role of radiation defects, especially the double effects of oxide trapped charge, is discussed in heavily or lightly doped transistors. Finally, through comparison between the high- and low-dose-rate response of the collector current in heavily doped lateral PNP transistors, the abnormal effect can be attributed to the annealing of the oxide trapped charge. The response of the collector current, in heavily doped PNP transistors under high- and low-dose-rate irradiation is described in detail. (semiconductor integrated circuits)

  5. Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-02-01

    Three-dimensional III-nitride micro-structures are being developed as a promising candidate for the future opto-electrical devices. In this study, we demonstrate a quick and straight-forward method to locally evaluate free-carrier concentrations and a crystalline quality in individual GaN:Si micro-rods. By employing micro-Raman mapping and analyzing lower frequency branch of A1(LO)- and E1(LO)-phonon-plasmon-coupled modes (LPP-), the free carrier concentrations are determined in axial and planar configurations, respectively. Due to a gradual doping profile along the micro-rods, a highly spatially resolved mapping on the sidewall is exploited to reconstruct free carrier concentration profile along the GaN:Si micro-rods. Despite remarkably high free carrier concentrations above 1 × 1020 cm-3, the micro-rods reveal an excellent crystalline quality, without a doping-induced stress.

  6. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Mani Menaka, S., E-mail: manimenaka.phy@gmail.com [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Umadevi, G. [PG and Research Department of Physics, Government Arts College, Coimbatore, 641018, Tamilnadu (India); Manickam, M. [SRMV College of Arts and Science, Coimbatore, 641020, Tamilnadu (India)

    2017-04-15

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T{sub s} = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  7. Electrochemical treatment of reverse osmosis concentrate on boron-doped electrodes in undivided and divided cell configurations

    Energy Technology Data Exchange (ETDEWEB)

    Bagastyo, Arseto Y. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Department of Environmental Engineering, Institut Teknologi Sepuluh Nopember, Surabaya 60111 (Indonesia); Batstone, Damien J. [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia); Kristiana, Ina [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Escher, Beate I. [National Research Centre for Environmental Toxicology (Entox), The University of Queensland, Brisbane, QLD 4108 (Australia); Joll, Cynthia [Curtin Water Quality Research Centre, Resources and Chemistry Precinct, Department of Chemistry, Curtin University, Bentley, Perth, WA 6102 (Australia); Radjenovic, Jelena, E-mail: j.radjenovic@uq.edu.au [Advanced Water Management Centre, The University of Queensland, St Lucia, QLD 4072 (Australia)

    2014-08-30

    Highlights: • 100% of COD and ∼70% of DOC was removed in both cell configurations. • ∼21.7 mg L{sup −1} of AOCl and ∼2.3 mg L{sup −1} of AOBr was formed regardless of the membrane use. • The TEQ was far lower than expected given the high AOCl concentrations. • The undivided cell consumed lower energy compared to the divided cell. - Abstract: An undivided electrolytic cell may offer lower electrochlorination through reduction of chlorine/hypochlorite at the cathode. This study investigated the performance of electrooxidation of reverse osmosis concentrate using boron-doped diamond electrodes in membrane-divided and undivided cells. In both cell configurations, similar extents of chemical oxygen demand and dissolved organic carbon removal were obtained. Continuous formation of chlorinated organic compounds was observed regardless of the membrane presence. However, halogenation of the organic matter did not result in a corresponding increase in toxicity (Vibrio fischeri bioassay performed on extracted samples), with toxicity decreasing slightly until 10 Ah L{sup −1}, and generally remaining near the initial baseline-toxicity equivalent concentration (TEQ) of the raw concentrate (i.e., ∼2 mg L{sup −1}). The exception was a high range toxicity measure in the undivided cell (i.e., TEQ = 11 mg L{sup −1} at 2.4 Ah L{sup −1}), which rapidly decreased to 4 mg L{sup −1}. The discrepancy between the halogenated organic matter and toxicity patterns may be a consequence of volatile and/or polar halogenated by-products formed in oxidation by OH· electrogenerated at the anode. The undivided cell exhibited lower energy compared to the divided cell, 0.25 kWh gCOD{sup −1} and 0.34 kWh gCOD{sup −1}, respectively, yet it did not demonstrate any improvement regarding by-products formation.

  8. Effect of copper concentration on the physical properties of copper doped NiO thin films deposited by spray pyrolysis

    International Nuclear Information System (INIS)

    Mani Menaka, S.; Umadevi, G.; Manickam, M.

    2017-01-01

    The spray pyrolysis (SP) technique is an important and powerful method for the preparation of nickel oxide (NiO) and copper-doped nickel oxide thin films. The best films were obtained when the substrate temperature, T_s = 450 °C on glass substrates. Copper (Cu) concentrations in the films were varied from 0 to 8%. The effect of Cu concentration on the structural, morphological, spectral, optical, and electrical properties of the thin films were studied by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Fourier transformed infrared spectroscopy (FTIR), UV–vis–NIR spectrophotometer, Hot probe and Hall system. The X-ray diffraction result shows the polycrystalline cubic structure of sprayed films with (200) preferred orientation. The variations of the structural parameters such as lattice parameters and grain sizes were investigated. The SEM image displays the surface morphology of the NiO and Cu:NiO thin films. The FTIR of the as-deposited films were associated with chemical identification. The optical transmittance and absorbance spectra of the films were measured by UV–vis–NIR spectrophotometer. The absorption coefficient and band gaps of the films were calculated using the optical method. All the NiO and Cu:NiO films were p-type. The resistivity of the above films decreases with the increase in copper concentration and so the conductivity of the films depend on the precursor concentration. - Highlights: • Pure and Cu:NiO films were deposited by Spray pyrolysis technique. • The XRD result shows the polycrystalline nature of pure and Cu:NiO films. • The formation of pure and Cu:NiO were confirmed by FTIR analysis. • Band gap values of pure and Cu:NiO decreases. • All the pure and Cu:NiO films were p-type.

  9. Intra-individual variability in the urine concentrations of inhaled salmeterol in male subjects with reference to doping analysis – impact of urine specific gravity correction

    DEFF Research Database (Denmark)

    Hostrup, Morten; Kalsen, Anders; Hemmersbach, Peter

    2012-01-01

    and a-hydroxysalmeterol during visits one and two were 12.6 and 21.8%, respectively. The intra-individual variability of salmeterol and a-hydroxysalmeterol in the urine concentrations were significantly higher when uncorrected for USG with 43.0 and 43.7% versus 20.4% (p...Since 2010, the World Anti-Doping Agency (WADA) has introduced urinary thresholds for some beta2-agonists. In doping analysis urine samples of beta2-agonists are not corrected for the Urine Specific Gravity (USG) by the WADA laboratories. Several studies have observed high differences in the urine...

  10. Effect of γ-irradiation on the lattice parameter and colour centre concentration in pure Ca2+, Sr2+ and Eu2+ doped KCl crystals

    International Nuclear Information System (INIS)

    Damm, J.Z.; Stepien-Damm, J.

    1980-01-01

    The changes of lattice parameter and colour centre concentration are examined in KCl crystals (both pure and Me 2+ -doped) irradiated by γ-rays at room temperature. For the pure crystals the relative volume change vs. F-centre concentration plot reveals the presence of two stages, one ascribed to the introduction of colour centre pairs (or F centres only) and other to the generation of new dislocations (or new dislocations with trapped-hole centres). In Me 2+ doped crystals the lattice expansion bears a complex character (in the initial irradiation stage a transient maximum appears). Additional anomaly appears in Eu 2+ KCl in the high-dose range where in spite of a distinct F-centre concentration drop a marked raise of the lattice parameter is observed. (author)

  11. Different valence Sn doping - A simple way to detect oxygen concentration variation of ZnO quantum dots synthesized under ultrasonic irradiation.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Zhang, Qitu; Wang, Lixi; Song, Bo; Wu, Fan; Wong, C P

    2017-09-01

    An ultrasonic method is employed to synthesize the Sn doped Zn 0.95 Sn 0.05 O quantum dots with green light emission. Sn 2+ and Sn 4+ ions are used to create different optical defects inside Zn 0.95 Sn 0.05 O quantum dots and the changing trend of oxygen concentration under different ultrasonic irradiation power are investigated. The photoluminescence spectra are employed to characterize the optical defects of Zn 0.95 Sn 0.05 O quantum dots. The UV-vis spectra are used to study the band gap of Zn 0.95 Sn 0.05 O quantum dots, which is influenced by their sizes. The results indicate that ultrasonic power would influence the size of Zn 0.95 Sn 0.05 O quantum dots as well as the type and quantity of defects in ZnO quantum dots. Changing trends in size of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are quite similar with each other, while the changing trends in optical defects types and concentration of Sn 2+ and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots are different. The difference of the optical defects concentration changing between Sn 2+ doped Zn 0.95 Sn 0.05 O quantum dots (V O defects) and Sn 4+ doped Zn 0.95 Sn 0.05 O quantum dots (O Zn and O i defects) shows that the formation process of ZnO under ultrasonic irradiation wiped oxygen out. Copyright © 2017 Elsevier B.V. All rights reserved.

  12. Influence of the dopant concentration on structural, optical and photovoltaic properties of Cu-doped ZnS nanocrystals based bulk heterojunction hybrid solar cells

    Science.gov (United States)

    Jabeen, Uzma; Adhikari, Tham; Shah, Syed Mujtaba; Pathak, Dinesh; Wagner, Tomas; Nunzi, Jean-Michel

    2017-06-01

    Zinc sulphide (ZnS) and Cu-doped ZnS nanoparticles were synthesized by the wet chemical method. The nanoparticles were characterized by UV-visible, fluorescence, fourier transform infra-red (FTIR) spectrometry, X-ray diffraction (XRD), X-ray photoelectron spectrometry (XPS), field emission scanning electron microscopy (FESEM) and high resolution transmission electron microscopy (HRTEM). Scanning electron microscopy supplemented with EDAX was employed to observe the morphology and chemical composition of the un-doped and doped samples. A significant blue shift of the absorption band with respect to the un-doped zinc sulphide was sighted by increasing the Cu concentration in the doped sample with decreasing the size of nanoparticles. Consequently, the band gap was tuned from 3.13 to 3.49 eV due to quantum confinement. The green emission arises from the recombination between the shallow donor level (sulfur vacancy) and the t2 level of Cu2+. However, the fluorescence emission spectrum of the undoped ZnS nanoparticles was deconvoluted into two bands, which are centered at 419 and 468 nm. XRD analysis showed that the nanomaterials were in cubic crystalline state. XRD peaks show that there were no massive crystalline distortions in the crystal lattice when the Cu concentration (0.05-0.1 M) was increased in the ZnS lattice. However, in the case of Cu-doped samples (0.15-0.2 M), the XRD pattern showed an additional peak at 37° due to incomplete substitution occurring during the experimental reaction step. A comparative study of surfaces of undoped and Cu-doped ZnS nanoparticles were investigated using X-ray photoelectron spectroscopy (XPS). The synthesized nanomaterial in combination with poly(3-hexylthiophene) (P3HT) was used in the fabrication of solar cells. The devices with ZnS nanoparticles showed an efficiency of 0.31%. The overall power conversion efficiency of the solar cells at 0.1 M Cu content in doped ZnS nanoparticles was found to be 1.6 times higher than the

  13. Ultra Low Concentration Adsorption Equilibria

    National Research Council Canada - National Science Library

    Mahle, John J; Buettner, Leonard C; LeVan, M. D; Schindler, Bryan J

    2006-01-01

    .... Specifically this work focuses on novel experimental and modeling methods to characterize and predict at ultra-low chemical vapor concentrations the protection afforded by adsorption-based vapor filtration systems...

  14. Enhanced separation efficiency of photoinduced charges for antimony-doped tin oxide (Sb-SnO{sub 2})/TiO{sub 2} heterojunction semiconductors with varied Sb doping concentration

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhen-Long [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Ma, Wen-Hai [School of Physical Education, Henan University, Kaifeng 475004 (China); Mao, Yan-Li, E-mail: ylmao1@163.com [School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Institute for Computational Materials Science, Henan University, Kaifeng 475004 (China)

    2014-09-07

    In this paper, antimony-doped tin oxide (Sb-SnO{sub 2}) nanoparticles were synthesized with varied Sb doping concentration, and the Sb-SnO{sub 2}/TiO{sub 2} heterojunction semiconductors were prepared with Sb-SnO{sub 2} and TiO{sub 2}. The separation efficiency of photoinduced charges was characterized with surface photovoltage (SPV) technique. Compared with Sb-SnO{sub 2} and TiO{sub 2}, Sb-SnO{sub 2}/TiO{sub 2} presents an enhanced separation efficiency of photoinduced charges, and the SPV enhancements were estimated to be 1.40, 1.43, and 1.99 for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. To understand the enhancement, the band structure of Sb-SnO{sub 2} and TiO{sub 2} in the heterojunction semiconductor was determined, and the conduction band offsets (CBO) between Sb-SnO{sub 2} and TiO{sub 2} were estimated to be 0.56, 0.64, and 0.98 eV for Sb-SnO{sub 2}/TiO{sub 2} composed of Sb-SnO{sub 2} with the Sb doping concentration of 5%, 10%, and 15%, respectively. These results indicate that the separation efficiency enhancement is resulting from the energy level matching, and the increase of enhancement is due to the rising of CBO.

  15. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    International Nuclear Information System (INIS)

    Kim, Byunggu; Leem, Jae-Young

    2017-01-01

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  16. Effects of Doping Concentration on the Structural and Optical Properties of Spin-Coated In-doped ZnO Thin Films Grown on Thermally Oxidized ZnO Film/ZnO Buffer Layer/Mica Substrate

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Byunggu; Leem, Jae-Young [Inje University, Gimhae (Korea, Republic of)

    2017-01-15

    ZnO buffer layers were deposited on mica substrates using a sol-gel spin coating method. Then, a thin film of metallic Zn was deposited onto the ZnO buffer layer/mica substrate using a thermal evaporator, and the deposited Zn thin films were then thermally oxidized in a furnace at 500 ℃ for 2 h in air. Finally, In-doped ZnO (IZO) thin films with different In concentrations were grown on the oxidized ZnO film/ZnO buffer layer/mica substrates using the sol-gel spin-coating method. All the IZO films showed ZnO peaks with similar intensities. The full width at half maximum values of the ZnO (002) peak for the IZO thin films decreased with an increase in the In concentration to 1 at%, because the crystallinity of the films was enhanced. However, a further increase in the In concentration caused the crystal quality to degrade. This might be attributed to the fact that the higher In doping resulted in an increase in the number of ionized impurities. The Urbach energy (EU) values of the IZO thin film decreased with an increase in the In concentration to 1 at % because of the enhanced crystal quality of the films. The EU values for the IZO thin films increased with the In concentration from 1 at%to 3 at%, reflecting the broadening of localized band tail state near the conduction band edge of the films.

  17. LED and low level laser therapy association in tooth bleaching using a novel low concentration H2O2/N-doped TiO2 bleaching agent

    Science.gov (United States)

    Bezerra Dias, Hércules; Teixeira Carrera, Emanuelle; Freitas Bortolatto, Janaína; Ferrarezi de Andrade, Marcelo; Nara de Souza Rastelli, Alessandra

    2016-01-01

    Since low concentration bleaching agents containing N-doped TiO2 nanoparticles have been introduced as an alternative to conventional agents, it is important to verify their efficacy and the hypersensitivity effect in clinical practice. Six volunteer patients were evaluated for color change and hypersensitivity after bleaching using 35% H2O2 (one session of two 12 min applications) and 6% H2O2/N-doped TiO2 (one session of three 12 min applications) and after low level laser therapy application (LLLT) (780 nm, 40 mW, 10 J.cm-2, 10 s). Based on this case study, the nanobleaching agent provided better or similar aesthetic results than the conventional agent under high concentration, and its association with LLLT satisfactorily decreased the hypersensitivity. The 6% H2O2/N-doped TiO2 agent could be used instead of conventional in-office bleaching agents under high concentrations to fulfill the rising patient demand for aesthetics.

  18. Effect of oxygen vacancy and dopant concentration on the magnetic properties of high spin Co2+ doped TiO2 nanoparticles

    International Nuclear Information System (INIS)

    Choudhury, B.; Choudhury, A.; Maidul Islam, A.K.M.; Alagarsamy, P.; Mukherjee, M.

    2011-01-01

    Co doped TiO 2 nanoparticles have been synthesized by a simple sol-gel route taking 7.5, 9.5 and 10.5 mol% of cobalt concentration. Formation of nanoparticles is confirmed by XRD and TEM. Increase in d-spacing occurs for (0 0 4) and (2 0 0) peak with increase in impurity content. Valence states of Co and its presence in the doped material is confirmed by XPS and EDX. The entire vacuum annealed samples show weak ferromagnetism. Increased magnetization is found for 9.5 mol% but this value again decreases for 10.5 mol% due to antiferromagnetic interactions. A blocking temperature of 37.9 K is obtained, which shows shifting to high temperature as the dopant concentration is increased. The air annealed sample shows only paramagnetic behavior. Temperature dependent magnetic measurements for the air annealed sample shows antiferromagnetic behavior with a Curie-Weiss temperature of -16 K. Here we report that oxygen vacancy and cobalt aggregates are a key factor for inducing ferromagnetism-superparamagnetism in the vacuum annealed sample. Appearance of negative Curie-Weiss temperature reveals the presence of antiferromagnetic Co 3 O 4 , which is the oxidation result of metallic Co or cobalt clusters present on the host TiO 2 . - Research highlights: → Oxygen vacancy induces ferromagnetism in cobalt doped anatase TiO2 nanoparticles. → On air annealing the sample loses ferromagnetism giving rise to paramagnetism. → Saturation magnetization decreases at higher doping concentration. → Blocking of magnetic moment occurs due to the presence of cobalt clusters.

  19. Determination of optimum Si excess concentration in Er-doped Si-rich SiO2 for optical amplification at 1.54 μm

    International Nuclear Information System (INIS)

    Savchyn, Oleksandr; Coffey, Kevin R.; Kik, Pieter G.

    2010-01-01

    The presence of indirect Er 3+ excitation in Si-rich SiO 2 is demonstrated for Si-excess concentrations in the range of 2.5-37 at. %. The Si excess concentration providing the highest density of sensitized Er 3+ ions is demonstrated to be relatively insensitive to the presence of Si nanocrystals and is found to be ∼14.5 at. % for samples without Si nanocrystals (annealed at 600 deg. C) and ∼11.5 at. % for samples with Si nanocrystals (annealed at 1100 deg. C). The observed optimum is attributed to an increase in the density of Si-related sensitizers as the Si concentration is increased, with subsequent deactivation and removal of these sensitizers at high Si concentrations. The optimized Si excess concentration is predicted to generate maximum Er-related gain at 1.54 μm in devices based on Er-doped Si-rich SiO 2 .

  20. Effect of doping concentration on the conductivity and optical properties of p-type ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Kumar, Vinod, E-mail: vinod.phy@gmail.com [Department of Physics, University of the Free State, Bloemfontein (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, Bloemfontein (South Africa); Purohit, L.P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab, Department of Physics, Gurukula Kangri University, Haridwar (India)

    2016-01-01

    Nitrogen doped ZnO (NZO) thin films were synthesized on glass substrates by the sol–gel and spin coating method. Zinc acetate dihydrates and ammonium acetate were used as precursors for zinc and nitrogen, respectively. X-ray diffraction study showed that the thin films have a hexagonal wurtzite structure corresponding (002) peak for undoped and doped ZnO thin films. The transmittance of the films was above 80% and the band gap of the film varies from 3.21±0.03 eV for undoped and doped ZnO. The minimum resistivity of NZO thin films was obtained as 0.473 Ω cm for the 4 at% of nitrogen (N) doping with a mobility of 1.995 cm{sup 2}/V s. The NZO thin films showed p-type conductivity at 2 and 3 at% of N doping. The AC conductivity measurements that were carried out in the frequency range 10 kHz to 0.1 MHz showed localized conduction in the NZO thin films. These highly transparent ZnO films can be used as a possible window layer in solar cells.

  1. Investigation of microstructure, electrical and photoluminescence behaviour of Ni-doped Zn0.96Mn0.04O nanoparticles: Effect of Ni concentration

    Science.gov (United States)

    Rajakarthikeyan, R. K.; Muthukumaran, S.

    2017-07-01

    ZnO, Zn0.96Mn0.04O and Ni-doped Zn0.96Mn0.04O nanoparticles with different Ni concentrations (0%, 2% and 4%) have been synthesized successfully by sol-gel method. The effects of Ni doping on the structural and optical properties were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), UV-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectroscopy. The XRD pattern confirmed the existence of single phase wurtzite-like hexagonal structure throughout the Ni concentrations without any additional phases. The substitution of Ni created the lattice distortion due to the disparity of ionic radius between Zn and Ni which reduced the crystallite size. The microscopic images showed that the size of ZnO nanoparticles reduced by Ni-doping while the shape remains almost spherical/hexagonal type. The electrical conductivity found to be maximum at Ni = 2% due to the availability of more charge carriers generated by Ni. The decrease of electrical conductivity at higher doping (Ni = 4%) is due to the fact that the generation of more defects. The enhanced band gap from 3.73 eV (Ni = 0%) to 3.79 eV (Ni = 4%) by the addition of Ni explained by Burstein-Moss effect. The change in infra-red (IR) intensity and full width at half maximum (FWHM) corresponding to the frequency around defect states were caused by the difference in the bond lengths that occurs when Ni ion replaces Zn ion. The observed blue band emission from 474 nm to 481 nm is due to a radiative transition of an electron from the deep donar level of Zni to an acceptor level of neutral VZn and the origin of green band may be due to oxygen vacancies and intrinsic defects. The tuning of the band gap and the visible emission bands by Ni doping concluded that Ni-doped Zn0.96Mn0.04O is suitable for various nano-photo-electronics applications.

  2. Physics with ultra-low energy antiprotons

    International Nuclear Information System (INIS)

    Holtkamp, D.B.; Holzscheiter, M.H.; Hughes, R.J.

    1989-01-01

    The experimental observation that all forms of matter experience the same gravitational acceleration is embodied in the weak equivalence principle of gravitational physics. However no experiment has tested this principle for particles of antimatter such as the antiproton or the antihydrogen atom. Clearly the question of whether antimatter is in compliance with weak equivalence is a fundamental experimental issue, which can best be addressed at an ultra-low energy antiproton facility. This paper addresses the issue. 20 refs

  3. PHYSICS WITH ULTRA-LOW ENERGY ANTIPROTONS

    Energy Technology Data Exchange (ETDEWEB)

    M. HOLZSCHEITER

    2001-02-01

    In this report the author describes the current status of the antiproton deceleration (AD) facility at CERN, and highlights the physics program with ultra-low energy antiproton at this installation. He also comments on future possibilities provided higher intensity antiproton beams become available at Fermilab, and review possibilities for initial experiments using direct degrading of high energy antiprotons in material has been developed and proven at CERN.

  4. Enhancement of encaged electron concentration by Sr(2+) doping and improvement of Gd(3+) emission through controlling encaged anions in conductive C12A7 phosphors.

    Science.gov (United States)

    Zhang, Meng; Liu, Yuxue; Zhu, Hancheng; Yan, Duanting; Yang, Jian; Zhang, Xinyang; Liu, Chunguang; Xu, Changshan

    2016-07-28

    Conductive C12A7:0.1%Gd(3+),y%Sr(2+) powders with different Sr(2+) doping concentrations have been prepared in a H2 atmosphere by a solid state method in combination with subsequent UV-irradiation. The encaged electron concentration could be modulated through tuning Sr(2+) doping and its maximum value reaches 2.3 × 10(19) cm(-3). This is attributed to the competition between enhanced uptake and the release of the encaged anions during their formation and diffusion processes and the suppression of encaged electrons generation due to the increased encaged OH(-) anions and the decreased encaged O(2-) anions. Although there exists encaged electrons and different encaged anions (O(2-), H(-) and OH(-)) in C12A7 conductive powders prepared through the hydrogen route, a dominant local environment around Gd(3+) could be observed using electron spin resonance (ESR) detection. It can be ascribed to the stronger coupling of the encaged OH(-) to the framework of C12A7 than those of the encaged electrons, O(2-) and H(-) anions. In addition, emission of Gd(3+) ions is enhanced under UV or low voltage electron beam excitation and a new local environment around Gd(3+) ions appears through the thermal annealing in air because of the decrease of the encaged OH(-) anions and the increase of the encaged O(2-) anions. Our results suggested that Sr(2+) doping in combination with thermal annealing in air is an effective strategy for increasing the conductive performance and enhancing the emission of rare earth ions doped into C12A7 conductive phosphors for low-voltage field emission displays (FEDs).

  5. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Science.gov (United States)

    Halim, N. Syafira Abdul; Wahid, M. Halim A.; Hambali, N. Azura M. Ahmad; Rashid, Shanise; Shahimin, Mukhzeer M.

    2017-11-01

    Light emitting diode (LED) employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW) light emitting diode (LED) is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED). Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV) are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW) is also increases from 2.8V to 3.1V.

  6. Doping concentration effect on performance of single QW double-heterostructure InGaN/AlGaN light emitting diode

    Directory of Open Access Journals (Sweden)

    Abdul Halim N. Syafira

    2017-01-01

    Full Text Available Light emitting diode (LED employed a numerous applications such as displaying information, communication, sensing, illumination and lighting. In this paper, InGaN/AlGaN based on one quantum well (1QW light emitting diode (LED is modeled and studied numerically by using COMSOL Multiphysics 5.1 version. We have selected In0.06Ga0.94N as the active layer with thickness 50nm sandwiched between 0.15μm thick layers of p and n-type Al0.15Ga0.85N of cladding layers. We investigated an effect of doping concentration on InGaN/AlGaN double heterostructure of light-emitting diode (LED. Thus, energy levels, carrier concentration, electron concentration and forward voltage (IV are extracted from the simulation results. As the doping concentration is increasing, the performance of threshold voltage, Vth on one quantum well (1QW is also increases from 2.8V to 3.1V.

  7. The structural, electrical and optical properties of Mg-doped ZnO with different interstitial Mg concentration

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Yonghong, E-mail: hchyh@njust.edu.cn [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Zeng, Haibo [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China); Du, Jifu [School of Nuclear Technology and Chemistry & Biology, Hubei University of Science and Technology, Xianning 437100 (China); Hu, Ziyu [Beijing Computational Science Research Center, Beijing 100084 (China); Zhang, Shengli [Institute of Optoelectronics & Nanomaterials, College of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094 (China)

    2016-10-01

    Through first principle calculations, we studied the structural, electronic and optical properties of ZnO doped by interstitial Mg. With the increase of Mg content (x), the derivations of lattice parameters from the wurtzite ZnO become more and more significant. The Mg-doped ZnO with x below 15.79% is found to be n-type semiconductor. The minimum of energy band gap and light transmittance in high energy region (7.5–25 eV) decrease while the conductivity and refractive index increase with increasing x. Further increasing x up to 20%, the Mg-doped ZnO is found to be direct-band-gap semiconductor with great structural derivation from wurtzite phase. The light transmittance increases while the refractive index decreases with the increase of x due to the change of geometry and electronic structure. So, it’s concluded that the electronic and optical properties of ZnO doped by interstitial Mg may be greatly influenced by Mg content. - Graphical abstract: The minimum of energy gap decreases while the corresponding relative number of electrons into the conduction bands increases when the interstitial Mg content x in Mg-doped ZnO increases (0 ≤ x ≤ 15.79%). - Highlights: • The energy band gap decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The conductivity increases with the increase of interstitial Mg content from 5.88% to 15.79%. • The Mg{sub x}Zn{sub 1-x}O (interstitial Mg content x= 20%) is found to be a direct-band-gap semiconductor. • The light transmittance decreases with the increase of interstitial Mg content from 5.88% to 15.79%. • The refractive index increases with the increase of interstitial Mg content from 5.88% to 15.79%.

  8. Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms-

    Science.gov (United States)

    Kobayashi, K.; Yamaoka, S.; Sueoka, K.; Vanhellemont, J.

    2017-09-01

    It is well known that p-type, neutral and n-type dopants affect the intrinsic point defect (vacancy V and self-interstitial I) behavior in single crystal Si. By the interaction with V and/or I, (1) growing Si crystals become more V- or I-rich, (2) oxygen precipitation is enhanced or retarded, and (3) dopant diffusion is enhanced or retarded, depending on the type and concentration of dopant atoms. Since these interactions affect a wide range of Si properties ranging from as-grown crystal quality to LSI performance, numerical simulations are used to predict and to control the behavior of both dopant atoms and intrinsic point defects. In most cases, the thermal equilibrium concentrations of dopant-point defect pairs are evaluated using the mass action law by taking only the binding energy of closest pair to each other into account. The impacts of dopant atoms on the formation of V and I more distant than 1st neighbor and on the change of formation entropy are usually neglected. In this study, we have evaluated the thermal equilibrium concentrations of intrinsic point defects in heavily doped Si crystals. Density functional theory (DFT) calculations were performed to obtain the formation energy (Ef) of the uncharged V and I at all sites in a 64-atom supercell around a substitutional p-type (B, Ga, In, and Tl), neutral (C, Ge, and Sn) and n-type (P, As, and Sb) dopant atom. The formation (vibration) entropies (Sf) of free I, V and I, V at 1st neighboring site from B, C, Sn, P and As atoms were also calculated with the linear response method. The dependences of the thermal equilibrium concentrations of trapped and total intrinsic point defects (sum of free I or V and I or V trapped with dopant atoms) on the concentrations of B, C, Sn, P and As in Si were obtained. Furthermore, the present evaluations well explain the experimental results of the so-called ;Voronkov criterion; in B and C doped Si, and also the observed dopant dependent void sizes in P and As doped Si

  9. Present status and prospects of ultralow level radioactivity measurements (5). Measurement of time variations of cosmic rays in the past by the detection of ultralow level 14C and 7Be radioactivity

    International Nuclear Information System (INIS)

    Sakurai, Hirohisa

    2006-01-01

    The change of the concentration of 7 Be in air and 14 C in the tree ring, cosmogenic nuclide, was measured by the ultralow level radioactivity measurement method. The concentration of 14 C in the tree ring was changed by the intensity of cosmic ray in the past. Cosmic ray and cosmogenic nuclide, solar activity and change of cosmic ray intensity, the continuous measurement of 7 Be concentration in atmosphere, and measurement of 14 C concentration in the old tree ring are reported. 14 C concentration in tree ring is measured by the ultralow level liquid scintillation measuring system (Quantulus) and 14 C concentration in the tree ring of Japanese cedar at Akita and Murou was changed by nuclear tests in air. 14 C concentration of Chokaijindaisugi, cryptomeria, about 2500 years old, is changed periodically about 10.1 years as almost same as the sunspot activity cycle. (S.Y.)

  10. Estimation of free carrier concentrations in high-quality heavily doped GaN:Si micro-rods by photoluminescence and Raman spectroscopy

    Science.gov (United States)

    Mohajerani, M. S.; Khachadorian, S.; Nenstiel, C.; Schimpke, T.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

    2016-03-01

    The controlled growth of highly n-doped GaN micro rods is one of the major challenges in the fabrication of recently developed three-dimensional (3D) core-shell light emitting diodes (LEDs). In such structures with a large active area, higher electrical conductivity is needed to achieve higher current density. In this contribution, we introduce high quality heavily-doped GaN:Si micro-rods which are key elements of the newly developed 3D core-shell LEDs. These structures were grown by metal-organic vapor phase epitaxy (MOVPE) using selective area growth (SAG). We employed spatially resolved micro-Raman and micro-photoluminescence (PL) in order to directly determine a free-carrier concentration profile in individual GaN micro-rods. By Raman spectroscopy, we analyze the low-frequency branch of the longitudinal optical (LO)-phonon-plasmon coupled modes and estimate free carrier concentrations from ≍ 2.4 × 1019 cm-3 up to ≍ 1.5 × 1020 cm-3. Furthermore, free carrier concentrations are determined by estimating Fermi energy level from the near band edge emission measured by low-temperature PL. The results from both methods reveal a good consistency.

  11. Effect of the concentration of magnetic grains on the linear-optical-absorption coefficient of ferrofluid-doped lyotropic mesophases: deviation from the Beer-Lambert law.

    Science.gov (United States)

    Cuppo, F L S; Gómez, S L; Figueiredo Neto, A M

    2004-04-01

    In this paper is reported a systematic experimental study of the linear-optical-absorption coefficient of ferrofluid-doped isotropic lyotropic mixtures as a function of the magnetic-grains concentration. The linear optical absorption of ferrolyomesophases increases in a nonlinear manner with the concentration of magnetic grains, deviating from the usual Beer-Lambert law. This behavior is associated to the presence of correlated micelles in the mixture which favors the formation of small-scale aggregates of magnetic grains (dimers), which have a higher absorption coefficient with respect to that of isolated grains. We propose that the indirect heating of the micelles via the ferrofluid grains (hyperthermia) could account for this nonlinear increase of the linear-optical-absorption coefficient as a function of the grains concentration.

  12. Influence of Al concentration and annealing temperature on structural, optical, and electrical properties of Al co-doped ZnO thin films

    International Nuclear Information System (INIS)

    Gürbüz, Osman; Kurt, İsmail; Çalışkan, Serkan; Güner, Sadık

    2015-01-01

    Highlights: • RF magnetron sputtering technique seems to be very efficient method for fabrication of Al doped ZnO (AZO) films. • Long range single crystalline structure improves with annealing process. • Optical properties became much better after annealing process especially for the AZO films that include high Al concentration. • Much greater conductivity with increasing Al concentration and annealing process. • AZO films have potential applicability in spintronic devices. - Abstract: The pure ZnO and Al-doped ZnO (AZO) thin films (thickness: 200 nm) were prepared on both side polished silica (SiO 2 ) substrates via RF magnetron sputtering at room temperature by using 2.5 inches high-purity ZnO (99.9%) and Al (99.9%) targets. The samples were annealed at 300 °C, 400 °C and 500 °C for 45 min in N 2 ambient in quartz annealing furnace system, respectively. We investigated the effects of various Al concentrations and annealing treatment on the structural, electrical, and optical properties of films. The preferred crystallization was observed along c axis (single (0 0 2) diffraction peak) from substrate surface assigning the single crystalline Würtzite lattice for pure ZnO and AZO thin films. Although increasing Al concentration decreases the order of crystallization of as-grown films, annealing process increases the long range crystal order. The crystallite sizes vary between minimum 12.98 nm and maximum 20.79 nm for as-grown and annealed samples. The crystallite sizes decrease with increasing Al concentration but increase with increasing annealing temperature as general trend. The grain size and porosity of films change with annealing treatment. The smaller grains coalesce together to form larger grains for many films. However, a reverse behavior is seen for Al 2.23 ZnO and Al 12.30 ZnO samples. That is, Al concentration plays critical role as well as temperature on grain size. Low percent optical transmittance (T%) is observed due to higher Al

  13. Influence of boron concentration on growth characteristic and electro-catalytic performance of boron-doped diamond electrodes prepared by direct current plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Feng Yujie; Lv Jiangwei; Liu Junfeng; Gao Na; Peng Hongyan; Chen Yuqiang

    2011-01-01

    A series of boron-doped diamond (BDD) electrodes were prepared by direct current plasma chemical vapor deposition (DC-PCVD) with different compositions of CH 4 /H 2 /B(OCH 3 ) 3 gas mixture. A maximum growth rate of 0.65 mg cm -2 h -1 was obtained with CH 4 /H 2 /B(OCH 3 ) 3 radio of 4/190/10 and this growth condition was also a turning point for discharge plasma stability which arose from the addition of B(OCH 3 ) 3 that changed electron energy distribution and influenced the plasma reaction. The surface coating structure and electro-catalytic performance of the BDD electrodes were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Hall test, and electrochemical measurement and electro-catalytic oxidation in phenol solution. It is suggested that the boron doping level and the thermal stress in the films are the main factors affecting the electro-catalytic characteristics of the electrodes. Low boron doping level with CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/199/1 decreased the films electrical conductivity and its electro-catalytic activity. When the carrier concentration in the films reached around 10 20 cm -3 with CH 4 /H 2 /B(OCH 3 ) 3 ratio over a range of 4/195/5-4/185/15, the thermal stress in the films was the key reason that influenced the electro-catalytic activity of the electrodes for its effect on diamond lattice expansion. Therefore, the BDD electrode with modest CH 4 /H 2 /B(OCH 3 ) 3 ratio of 4/190/10 possessed the best phenol removal efficiency.

  14. Synthesis and thermoluminescence behavior of ZrO2:Eu3+ with variable concentration of Eu3+ doped phosphor

    Directory of Open Access Journals (Sweden)

    Raunak Kumar Tamrakar

    2014-10-01

    Full Text Available Cubical ZrO2 phosphor doped with the europium synthesized by conventional solid state synthesis method. The prepared phosphor was characterized by X-ray diffraction (XRD technique, field emission gun scanning electron microscopy (FEGSEM and transmission electron microscopy (TEM. In this paper, we focused on the thermoluminescence glow curves and kinetic parameters, activation energy, order of kinetics, and the frequency factor of ZrO2:Eu3+ phosphor under different doses of UV irradiations at a heating rate of 6.7 °C/s. The kinetic parameters activation energy E, the order of kinetics b, and the frequency factor s of synthesized phosphor of ZrO2:Eu3+ have been calculated by using a peak shape method.

  15. Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

    International Nuclear Information System (INIS)

    Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng

    2016-01-01

    A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)

  16. Dependence of upconversion emission intensity on Yb3+ concentration in Er3+/Yb3+ co-doped flake shaped Y2(MoO4)3 phosphors

    International Nuclear Information System (INIS)

    Lu Weili; Cheng Lihong; Zhong Haiyang; Sun Jiashi; Wan Jing; Tian Yue; Chen Baojiu

    2010-01-01

    Yttrium molybdate phosphors with fixed Er 3+ and various Yb 3+ concentrations were synthesized via a co-precipitation method. The crystal structure and the morphology of the phosphor were characterized by means of x-ray diffraction and field-emission scanning electron microscopy. Under 980 nm excitation, red and green upconversion emissions centred at 660, 553 and 530 nm were observed. Quantitative analyses on the dependence of upconversion emission intensity on the working current of a laser diode (LD) indicated that two-photon processes are responsible for both red and green upconversion emissions in both cases of low and high Yb 3+ concentrations. The relationship between the emission intensity ratio of 2 H 11/2 → 4 I 15/2 to 4 S 3/2 → 4 I 15/2 and the working current of the LD was studied for the samples doped with low and high Yb 3+ concentrations. Finally, a set of rate equations was established based on the possible upconversion mechanism, and an empirical formula was proposed to describe the Yb 3+ concentration dependence of upconversion emission intensity; the empirical formula fits well with the experimental data.

  17. Physics of cryogenics an ultralow temperature phenomenon

    CERN Document Server

    Zohuri, Bahman

    2018-01-01

    Physics of Cryogenics: An Ultralow Temperature Phenomenon discusses the significant number of advances that have been made during the last few years in a variety of cryocoolers, such as Brayton, Joule-Thomson, Stirling, pulse tube, Gifford-McMahon and magnetic refrigerators. The book reviews various approaches taken to improve reliability, a major driving force for new research areas. The advantages and disadvantages of different cycles are compared, and the latest improvements in each of these cryocoolers is discussed. The book starts with the thermodynamic fundamentals, followed by the definition of cryogenic and the associated science behind low temperature phenomena and properties. This book is an ideal resource for scientists, engineers and graduate and senior undergraduate students who need a better understanding of the science of cryogenics and related thermodynamics.

  18. Spectral properties and laser performances of Yb3+:LaCa4O(BO3)3 crystal with high concentration doping

    International Nuclear Information System (INIS)

    Ji, Yuexia; Cao, Jiafeng; Xu, Jinlong; You, Zhenyu; Zhu, Zhaojie; Li, Jianfu; Wang, Yan; Tu, Chaoyang

    2013-01-01

    Highlights: •Yb 3+ :LaCa 4 O(BO 3 ) 3 single crystal was grown with high concentration doping. •Laser potentiality was evaluated based on the spectral and laser parameters. •Continuous wave laser operation was realized. •An output power of 0.77 W and a slope efficiency of 15.71% at 1077 nm were obtained. •The spectra and laser properties of Yb 3+ :LaCa 4 O(BO 3 ) 3 crystal were firstly reported. -- Abstract: High concentration of 15 at.% Yb 3+ doped LaCa 4 O(BO 3 ) 3 (LaCOB) crystal was grown by Czochralski technique. The absorption cross section was conclulated to be 0.63 × 10 −20 cm 2 at 977 nm and the emission cross section to be 0.39 × 10 −20 cm 2 at 1030 nm, with the FWHM of 6.15 and 33 nm respectively. Laser potentiality was evaluated based on the gain cross section σ g , the minimum inversion fraction β min and the minimum pump intensity I min , which were calculated to be 0.18 × 10 −20 cm 2 , 0.05 and 0.47 kw/cm 2 , respectively. Continuous wave laser operation was realized with an output power of 0.77 W and a slope efficiency of 15.71%. The laser emitted around 1077 nm. The radiation trapping and continuous pump mode are contributed to the lasing wavelength for present crystal

  19. Optical and scintillation properties of Ce-doped LuLiF{sub 4} with different Ce concentrations

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki, E-mail: yanagida@lsse.kyutech.ac.jp [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka 808-0196 (Japan); Fujimoto, Yutaka [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu-ku, Kitakyushu, Fukuoka 808-0196 (Japan); Fukuda, Kentaro [Tokuyama Corporation, Shibuya 3-chome, Shibuya-ku, Tokyo 150-8383 Japan (Japan); Chani, Valery [Tohoku Univ., 2-1-1 Katahira, Sendai 980-8577 (Japan)

    2013-11-21

    The crystals of 0.1, 0.5, and 1 mol% Ce-doped LuLiF{sub 4} (Ce:LLF) grown by the micro-pulling down (μ-PD) method were examined for their optical and scintillation properties. Ce:LLF crystals had ∼80% transparency at wavelengths longer than 300 nm. In photoluminescence spectra, they demonstrated intense emission peaks at 310 and 330 nm with the quantum yield of 60–90%. Ce{sup 3+} 5d–4f emission peaks were also detected at similar wavelengths of 310 and 330 nm in the radioluminescence spectra obtained under X-ray excitation. According to pulse height spectra recorded under γ-ray irradiation, the absolute light yield of Ce 0.1, 0.5, and 1% were 3600±400, 3000±300, and 1700±200 ph/MeV, respectively. Decay time kinetics was also inspected using a pulse X-ray equipped streak camera system. The decay time components of Ce:LLF were ∼70 ns and ∼1 μs for all the samples.

  20. Optical and scintillation properties of Ce-doped LuLiF4 with different Ce concentrations

    International Nuclear Information System (INIS)

    Yanagida, Takayuki; Fujimoto, Yutaka; Fukuda, Kentaro; Chani, Valery

    2013-01-01

    The crystals of 0.1, 0.5, and 1 mol% Ce-doped LuLiF 4 (Ce:LLF) grown by the micro-pulling down (μ-PD) method were examined for their optical and scintillation properties. Ce:LLF crystals had ∼80% transparency at wavelengths longer than 300 nm. In photoluminescence spectra, they demonstrated intense emission peaks at 310 and 330 nm with the quantum yield of 60–90%. Ce 3+ 5d–4f emission peaks were also detected at similar wavelengths of 310 and 330 nm in the radioluminescence spectra obtained under X-ray excitation. According to pulse height spectra recorded under γ-ray irradiation, the absolute light yield of Ce 0.1, 0.5, and 1% were 3600±400, 3000±300, and 1700±200 ph/MeV, respectively. Decay time kinetics was also inspected using a pulse X-ray equipped streak camera system. The decay time components of Ce:LLF were ∼70 ns and ∼1 μs for all the samples

  1. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    International Nuclear Information System (INIS)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo

    1995-01-01

    Structural characteristics and electrooptical properties of Sn-doped In 2 O 3 (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO 2 wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author)

  2. Effects of tin concentrations on structural characteristics and electrooptical properties of tin-doped indium oxide films prepared by RF magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yi, Choong-Hoon; Yasui, Itaru; Shigesato, Yuzo [Tokyo Univ. (Japan). Inst. of Industrial Science

    1995-02-01

    Structural characteristics and electrooptical properties of Sn-doped In{sub 2}O{sub 3} (ITO) films were investigated in terms of Sn concentrations from 5.34 to 8.99 (Sn/In at.%) with changing oxygen partial pressure and substrate temperature during deposition, in spite of using an ITO target with the same Sn concentration (7.50 SnO{sub 2} wt%, 7.17 Sn/In at.%). The resistivity of the films deposited at 200 and 300degC had a clear tendency to decrease with decrease of the total Sn content. Sn atoms incorporated in the ITO films were classified into two types, i.e., electrically active substitutional Sn atoms contributing to carrier density and electrically nonactive impurities forming nonreducible tin-oxide complexes, which were revealed by precise lattice constant measurement. The change in the Sn concentration was found to be associated with the preferred orientation of the crystal grains, which was dominated by the deposition conditions and should reflect the crystal growth processes. (author).

  3. The influence of exercise and dehydration on the urine concentrations of salbutamol after inhaled administration of 1600 µg salbutamol as a single dose in relation to doping analysis

    DEFF Research Database (Denmark)

    Haase, Christoffer Bjerre; Backer, Vibeke; Kalsen, Anders

    2016-01-01

    The present study investigated the influence of exercise and dehydration on the urine concentrations of salbutamol after inhalation of that maximal permitted (1600 µg) on the 2015 World Anti-Doping Agency (WADA) prohibited list. Thirteen healthy males participated in the study. Urine concentrations...... of salbutamol were measured during three conditions: exercise (EX), exercise+dehydration (EXD), and rest (R). Exercise consisted of 75 min cycling at 60% of VO2max and a 20-km time-trial. Fluid intake was 2300, 270, and 1100 mL during EX, EXD, and R, respectively. Urine samples of salbutamol were collected 0.......0±0.7 ng/mL) than EX(3.8±0.8 ng/mL) and EXD(3.6±0.8 ng/mL). AUC was lower for R (14.1±2.8 ng/mL·∙h) than EX (16.9±2.9 ng/mL·∙h)(Pdehydration affect urine concentrations of salbutamol and increase the risk of Adverse Analytical Findings...

  4. Methanol-Tolerant Platinum-Palladium Catalyst Supported on Nitrogen-Doped Carbon Nanofiber for High Concentration Direct Methanol Fuel Cells.

    Science.gov (United States)

    Kim, Jiyoung; Jang, Jin-Sung; Peck, Dong-Hyun; Lee, Byungrok; Yoon, Seong-Ho; Jung, Doo-Hwan

    2016-08-15

    Pt-Pd catalyst supported on nitrogen-doped carbon nanofiber (N-CNF) was prepared and evaluated as a cathode electrode of the direct methanol fuel cell (DMFC). The N-CNF, which was directly synthesized by the catalytic chemical vapor deposition from acetonitrile at 640 °C, was verified as having a change of electrochemical surface properties such as oxygen reduction reaction (ORR) activities and the electrochemical double layer compared with common carbon black (CB). To attain the competitive oxygen reduction reaction activity with methanol tolerance, the Pt and Pd metals were supported on the CB or the N-CNF. The physical and electrochemical characteristics of the N-CNF-supported Pt-Pd catalyst were examined and compared with catalyst supported on the CB. In addition, DMFC single cells using these catalysts as the cathode electrode were applied to obtain I-V polarization curves and constant current operating performances with high-concentration methanol as the fuel. Pt-Pd catalysts had obvious ORR activity even in the presence of methanol. The higher power density was obtained at all the methanol concentrations when it applied to the membrane electrode assembly (MEA) of the DMFC. When the N-CNF is used as the catalyst support material, a better performance with high-concentration methanol is expected.

  5. Methanol-Tolerant Platinum-Palladium Catalyst Supported on Nitrogen-Doped Carbon Nanofiber for High Concentration Direct Methanol Fuel Cells

    Directory of Open Access Journals (Sweden)

    Jiyoung Kim

    2016-08-01

    Full Text Available Pt-Pd catalyst supported on nitrogen-doped carbon nanofiber (N-CNF was prepared and evaluated as a cathode electrode of the direct methanol fuel cell (DMFC. The N-CNF, which was directly synthesized by the catalytic chemical vapor deposition from acetonitrile at 640 °C, was verified as having a change of electrochemical surface properties such as oxygen reduction reaction (ORR activities and the electrochemical double layer compared with common carbon black (CB. To attain the competitive oxygen reduction reaction activity with methanol tolerance, the Pt and Pd metals were supported on the CB or the N-CNF. The physical and electrochemical characteristics of the N-CNF–supported Pt-Pd catalyst were examined and compared with catalyst supported on the CB. In addition, DMFC single cells using these catalysts as the cathode electrode were applied to obtain I-V polarization curves and constant current operating performances with high-concentration methanol as the fuel. Pt-Pd catalysts had obvious ORR activity even in the presence of methanol. The higher power density was obtained at all the methanol concentrations when it applied to the membrane electrode assembly (MEA of the DMFC. When the N-CNF is used as the catalyst support material, a better performance with high-concentration methanol is expected.

  6. Influence of Tm+3 concentration on the non-linear optical effects of the BiB3O6 : Tm3+ glass nanoparticle-doped polymer

    International Nuclear Information System (INIS)

    Majchrowski, A; Ebothe, J; Ozga, K; Kityk, I V; Reshak, A H; Lukasiewicz, T; Brik, M G

    2010-01-01

    It is shown that BiB 3 O 6 : Tm 3+ glass nanoparticles incorporated into polymethylmethacrylate (PMMA) and polycarbonate (PC) polymer matrices show good second-order susceptibilities under bicolour coherent laser treatment. It is found that only during incorporation into highly polarized PC matrices could one observe an enhancement of the second-order susceptibilities with increasing laser treated power densities. The main increase is observed for all samples at power densities equal to about 0.4 GW cm -2 . After passing this value there is a saturation of the output susceptibilities and even an abrupt decrease. The most striking feature is the achievement of second-order susceptibilities equal to about 5 pm V -1 for samples containing 4% nanoparticle (NP) content in the PC matrix. A further increase in the NP concentration to 6% leads to a decrease in susceptibility to 15%. In the case of PMMA matrices these changes do not exceed the background. The same situation is present for the pure BIBO and low-doped Tm materials. The effect is maximal for a low concentration of Tm-about 0.75%. In the case of bulk glasses the intensity dependences of the second-harmonic generation unambiguously show that the achieved maximal values of second-order susceptibilities do not exceed 3 pm V -1 for 0.5% Tm concentration.

  7. Effects of concentration of reduced graphene oxide on properties of sol–gel prepared Al-doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chou, Ching-Tian; Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Chen, Wei-Chun

    2016-04-30

    Reduced-graphene-oxide-incorporated aluminum-doped zinc oxide (AZO:rGO) composite thin films were synthesized on glass substrates by using the sol–gel method. The effect of the rGO concentration (0–3 wt%) on structural, electrical, and optical properties of the composite film was investigated by X-ray diffraction, scanning electron microscopy, atomic force microscopy, Hall-effect measurement, and ultraviolet–visible spectrometry. All of the composite films showed a typical hexagonal wurtzite structure, and the films incorporated with 1 wt% rGO showed the highest (0 0 2) peak intensity. The sheet resistance of the films was effectively reduced by a factor of more than two as the rGO ratio increased from 0 to 1 wt%. However, the sheet resistance increased with a further increase in the rGO ratio. The optical transmittance of the composite film monotonically decreased with increasing the rGO ratio from 0 to 3 wt%. The average optical transmittance (400–700 nm) of the AZO:rGO thin film within 1 wt% rGO was above 81%. - Highlights: • Reduced-graphene-oxide-doped ZnO:Al composite films are synthesized by sol–gel. • All AZO:rGO thin films show a typical hexagonal wurtzite structure. • Sheet resistance of AZO:rGO(1 wt%) film decreases by a factor of more than two. • The average visible transmittance of the AZO:rGO(1 wt%) film was 81%.

  8. Lowering the platinum loading of high temperature polymer electrolyte membrane fuel cells with acid doped polybenzimidazole membranes

    DEFF Research Database (Denmark)

    Fernandez, Santiago Martin; Li, Qingfeng; Jensen, Jens Oluf

    2015-01-01

    Membrane electrode assemblies (MEAs) with ultra-low Pt loading electrodes were prepared for high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs) based on acid doped polybenzimidazole. With no electrode binders or ionomers, the triple phase boundary of the catalyst layer was establ......Membrane electrode assemblies (MEAs) with ultra-low Pt loading electrodes were prepared for high temperature polymer electrolyte membrane fuel cells (HT-PEMFCs) based on acid doped polybenzimidazole. With no electrode binders or ionomers, the triple phase boundary of the catalyst layer...

  9. EPR study of concentration dependence in Ce, Ce : La and Ce:Y doped SrF2

    NARCIS (Netherlands)

    Dankert, O.; Vainchtein, David; Datema, H.C.; den Hartog, Hendrik

    1995-01-01

    Experimental results of an EPR-study of the concentration dependence of the doubly integrated intensity and linewidth of the signals associated with tetragonal Ce3+-F--dipoles in Sr1-xCexF2+x, Sr-1-0.005-x Ce0.005LaxF2+0.005+x and Sr-1-0.005-x Ce0.005YxF2+0.005+x are presented. Both show a nonlinear

  10. Studies on a Foam System of Ultralow Interfacial Tension Applied in Daqing Oilfield after Polymer Flooding

    Directory of Open Access Journals (Sweden)

    Hong-sheng Liu

    2013-01-01

    Full Text Available In order to study the effects of oil displacement by a foam system of ultralow interfacial tension, the interfacial activities and foam properties of a nonionic gemini surfactant (DWS were investigated under Daqing Oilfield reservoir conditions. Injection methods and alternate cycle of the foam system were discussed here on the basis of results from core flow experiments. It was obtained that the surface tension of DWS was approximately 25 mN/m, and ultralow interfacial tension was reached between oil and DWS with a surfactant concentration between 0.05wt% and 0.4wt%. The binary system showed splendid foam performances, and the preferential surfactant concentration was 0.3wt% with a polymer concentration of 0.2wt%. When gas and liquid were injected simultaneously, flow control capability of the foam reached its peak at the gas-liquid ratio of 3 : 1. Enhanced oil recovery factor of the binary foam system exceeded 10% in a parallel natural cores displacement after polymer flooding.

  11. Investigation of structural, electronic and anisotropic elastic properties of Ru-doped WB{sub 2} compound by increased valence electron concentration

    Energy Technology Data Exchange (ETDEWEB)

    Surucu, Gokhan, E-mail: g_surucu@yahoo.com [Ahi Evran University, Department of Electric and Energy, 40100, Kirsehir (Turkey); Gazi University, Photonics Application and Research Center, 06500, Ankara (Turkey); Kaderoglu, Cagil [Ankara University, Department of Engineering Physics, 06100, Ankara (Turkey); Deligoz, Engin; Ozisik, Haci [Aksaray University, Department of Physics, 68100, Aksaray (Turkey)

    2017-03-01

    First principles density functional theory (DFT) calculations have been used to investigate the structural, anisotropic elastic and electronic properties of ruthenium doped tungsten-diboride ternary compounds (W{sub 1−x}Ru{sub x}B{sub 2}) for an increasing molar fraction of Ru atom from 0.1 to 0.9 by 0.1. Among the nine different compositions, W{sub 0.3}Ru{sub 0.7}B{sub 2} has been found as the most stable one due to the formation energy and band filling theory calculations. Moreover, the band structures and partial density of states (PDOS) have been computed for each x composition. After obtaining the elastic constants for all x compositions, the secondary results such as Bulk modulus, Young’s modulus, Poisson’s ratio, Shear modulus, and Vickers Hardness of polycrystalline aggregates have been derived and the relevant mechanical properties have been discussed. In addition, the elastic anisotropy has been visualized in detail by plotting the directional dependence of compressibility, Poisson ratio, Young’s and Shear moduli. - Highlights: • Effects of Ru substitution in WB{sub 2} using increased valence electron concentration. • Structural, electronic, mechanic and elastic properties for increasing Ru content. • Considered alloys are incompressible, brittle, stiffer and high hard materials.

  12. Molded ultra-low density microcellular foams

    International Nuclear Information System (INIS)

    Rand, P.B.; Montoya, O.J.

    1986-07-01

    Ultra-low density (< 0.01 g/cc) microcellular foams were required for the NARYA pulsed-power-driven x-ray laser development program. Because of their extreme fragility, molded pieces would be necessary to successfully field these foams in the pulsed power accelerator. All of the foams evaluated were made by the thermally induced phase separation technique from solutions of water soluble polymers. The process involved rapidly freezing the solution to induce the phase separation, and then freeze drying to remove the water without destroying the foam's structure. More than sixty water soluble polymers were evaluated by attempting to make their solutions into foams. The foams were evaluated for shrinkage, density, and microstructure to determine their suitability for molding and meeting the required density and cell size requirements of 5.0 mg/cc and less than twenty μmeters. Several promising water soluble polymers were identified including the polyactylic acids, guar gums, polyactylamide, and polyethylene oxide. Because of thier purity, structure, and low shrinkage, the polyacrylic acids were chosen to develop molding processes. The initial requirements were for 2.0 cm. long molded rods with diameters of 1.0, 2.0. and 3.0 mm. These rods were made by freezing the solution in thin walled silicon rubber molds, extracting the frozen preform from the mold, and then freeze drying. Requirements for half rods and half annuli necessitated using aluminum molds. Again we successfully molded these shapes. Our best efforts to date involve molding annuli with 3.0 mm outside diameters and 2.0 mm inside diameters

  13. Effect of concentration variation on 2.0 µm emission of Ho3+-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 oxyfluorosilicate glasses

    Science.gov (United States)

    Gelija, Devarajulu; Borelli, Deva Prasad Raju

    2018-02-01

    The concentration variation of Ho3+ ion-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 glasses has been prepared by conventional melt quenching method. The thermal stability of 1 mol % of Ho3+-doped oxyfluorosilicate glass has been calculated using the differential thermal analysis (DTA) spectra. The phenomenological Judd-Ofelt intensity parameters Ωλ ( λ = 2, 4 and 6) were calculated for all concentrations of Ho3+ ions. The luminescence spectra in visible region of Ho3+ ion-doped glasses were recorded under the excitation wavelength of 452 nm. The spectra consists of several intense emission bands (5F4, 5S2) → 5I8 (547 nm), 5F3 → 5I8 (647 nm), 5F5 → 5I7 (660 nm) and (5F4, 5S2) → 5I7 (750 nm) in the range 500-780 nm. The fluorescence emission at ˜2.0 µm (5I7 → 5I8) was observed under the excitation of 488 nm Ar-ion laser. The stimulated emission cross section for 5I7 → 5I8 transition (˜2.0 µm) varies from 8.46 to 9.52 × 10-21 cm2, as calculated by the Fuchtbauer-Ladenburg (FL) theory. However, Mc-Cumber theory was used to calculate emission cross section values about 4.24-5.75 × 10-21 cm2 for the 5I7 → 5I8 transition in all concentrations of Ho3+-doped oxyfluorosilicate glasses. Therefore, these results reveal that the 0.5 mol % of Ho3+-doped oxyfluorosilicate glasses, exhibiting higher emission cross section, has potentially been used for laser applications at ˜ 2.0 µm.

  14. Effect of concentration variation on 2.0 μm emission of Ho3+-doped SiO2-Al2O3-Na2CO3-SrF2-CaF2 oxyfluorosilicate glasses

    International Nuclear Information System (INIS)

    Gelija, Devarajulu; Borelli, Deva Prasad Raju

    2018-01-01

    The concentration variation of Ho 3+ ion-doped SiO 2 -Al 2 O 3 -Na 2 CO 3 -SrF 2 -CaF 2 glasses has been prepared by conventional melt quenching method. The thermal stability of 1 mol % of Ho 3+ -doped oxyfluorosilicate glass has been calculated using the differential thermal analysis (DTA) spectra. The phenomenological Judd-Ofelt intensity parameters Ω λ (λ = 2, 4 and 6) were calculated for all concentrations of Ho 3+ ions. The luminescence spectra in visible region of Ho 3+ ion-doped glasses were recorded under the excitation wavelength of 452 nm. The spectra consists of several intense emission bands ( 5 F 4 , 5 S 2 ) → 5 I 8 (547 nm), 5 F 3 → 5 I 8 (647 nm), 5 F 5 → 5 I 7 (660 nm) and ( 5 F 4 , 5 S 2 ) → 5 I 7 (750 nm) in the range 500-780 nm. The fluorescence emission at ∝ 2.0 μm ( 5 I 7 → 5 I 8 ) was observed under the excitation of 488 nm Ar-ion laser. The stimulated emission cross section for 5 I 7 → 5 I 8 transition (∝ 2.0 μm) varies from 8.46 to 9.52 x 10 -21 cm 2 , as calculated by the Fuchtbauer-Ladenburg (FL) theory. However, Mc-Cumber theory was used to calculate emission cross section values about 4.24-5.75 x 10 -21 cm 2 for the 5 I 7 → 5 I 8 transition in all concentrations of Ho 3+ -doped oxyfluorosilicate glasses. Therefore, these results reveal that the 0.5 mol % of Ho 3+ -doped oxyfluorosilicate glasses, exhibiting higher emission cross section, has potentially been used for laser applications at ∝ 2.0 μm. (orig.)

  15. Effects of indium concentration on the properties of In-doped ZnO films: Applications to silicon wafer solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Djessas, K. [Université de Perpignan Via Domitia (UPVD), Laboratoire Procédés, Matériaux et Energie Solaire (PROMES—CNRS), TECNOSUD, Rambla de la thermodynamique, 66100 Perpignan (France); Bouchama, I., E-mail: bouchama.idris@yahoo.fr [Université de Perpignan Via Domitia (UPVD), Laboratoire Procédés, Matériaux et Energie Solaire (PROMES—CNRS), TECNOSUD, Rambla de la thermodynamique, 66100 Perpignan (France); Département d' Electronique, Faculté de Technologie, Université de Msila, 28000 (Algeria); Gauffier, J.L. [Département de Physique, INSA de Toulouse, 135 Avenue de Rangueil, 31077 Toulouse Cedex 4 (France); Ayadi, Z. Ben [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement (LaPhyMNE), Université de Gabès, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia)

    2014-03-31

    In the present paper, high-quality In-doped ZnO (ZnO:In) thin films have been prepared by rf-magnetron sputtering on glass and p-type monocrystalline silicon substrates from an aerogel nanopowder target material. The nanoparticles with the [In]/[Zn] ratio varying between 0.01 and 0.05 were synthesized by the sol–gel method and the structural properties have been analyzed. The effect of different dopant concentrations on the electrical, optical, structural and morphological properties of the films has been investigated. The obtained ZnO:In films at room temperature are polycrystalline with a hexagonal structure and a highly preferred orientation with the c-axis perpendicular to the substrate. Scanning electron microscopy and atomic force microscopy have been applied for a morphology characterization of the films' cross-section and surface. The results revealed a typical columnar structure and very smooth surface. Films with good optical transmittance, around 85%, within the visible wavelength region, and low resistivity in the range of 10{sup −3} Ω·cm and high mobility of 4 cm{sup 2}/Vs, were produced at low substrate temperature. On the other hand, we have studied the position of the p–n junction involved in an Au/In{sub 2}O{sub 3}:SnO{sub 2}/ZnO:In(n)/c-Si(p)/Al structure by electron beam induced current. Current density–voltage characterizations in the dark and under illumination were also performed. The cell exhibits an efficiency of 6%. - Highlights: • ZnO:In thin films were prepared by rf-magnetron sputtering. • No significant changes were observed in the ZnO:In properties. • In-doped ZnO shows superior electric properties compared with pure ZnO. • Interesting photovoltaic effect observed in ITO/ZnO:In(n)/c-Si(p) heterostructure • Good quality of p–n junction in the ZnO:In(n)/c-Si(p) solar cell.

  16. Progress on erbium-doped waveguide components

    DEFF Research Database (Denmark)

    Bjarklev, Anders Overgaard; Berendt, Martin Ole; Broeng, Jes

    1997-01-01

    The recent development in erbium-doped fiber amplifiers, and fiber lasers is reviewed. Also the latest results on planar erbium-doped waveguide amplifiers and high erbium concentration characterisation methods are presented...

  17. Electroplating method for producing ultralow-mass fissionable deposits

    International Nuclear Information System (INIS)

    Ruddy, F.H.

    1989-01-01

    A method for producing ultralow-mass fissionable deposits for nuclear reactor dosimetry is described, including the steps of holding a radioactive parent until the radioactive parent reaches secular equilibrium with a daughter isotope, chemically separating the daughter from the parent, electroplating the daughter on a suitable substrate, and holding the electroplated daughter until the daughter decays to the fissionable deposit

  18. Effect of weld metal toughness on fracture behavior under ultra-low cycle fatigue loading (earthquake)

    Energy Technology Data Exchange (ETDEWEB)

    Kermajani, M. [School of Materials Engineering, College of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Ghaini, F. Malek, E-mail: Fmalek@modares.ac.ir [School of Materials Engineering, College of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Miresmaeili, R. [School of Materials Engineering, College of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Aghakouchak, A.A. [School of Civil Engineering, College of Engineering, Tarbiat Modares University, Tehran (Iran, Islamic Republic of); Shadmand, M. [Department of Research and Development, MAPNA Electric and Control (MECO) Company, Karaj (Iran, Islamic Republic of)

    2016-06-21

    Results from 12 ultra-low cycle fatigue tests performed on the weld metals of both toughness and non-toughness rated grades are presented. Fracture resistance under these loadings seemed to be dependent on materials' toughness, displacement amplitude, and stress state triaxiality, while the toughness effect was more highlighted at high stress levels and concentrations. To study the effect of microstructures on these failures, supporting ancillary tests including all-weld tension coupons, Charpy V-notched impact tests, and optical and scanning electron microscope analyses were performed. The favored microstructures appeared to be those which absorbed energy by plastic deformation and, hence, hindered void formation and/or could avoid crack propagation by deflection. Considering the response of the tested materials to cyclic loadings and the requirements of the materials specified in AISC341 Provisions could question the adequacy of these requirements for weld metals. However, the role of microstructural features like inclusions would be the same in both the Charpy impact tests and ultra-low cycle loadings.

  19. Environmental response nanosilica for reducing the pressure of water injection in ultra-low permeability reservoirs

    Science.gov (United States)

    Liu, Peisong; Niu, Liyong; Li, Xiaohong; Zhang, Zhijun

    2017-12-01

    The super-hydrophobic silica nanoparticles are applied to alter the wettability of rock surface from water-wet to oil-wet. The aim of this is to reduce injection pressure so as to enhance water injection efficiency in low permeability reservoirs. Therefore, a new type of environmentally responsive nanosilica (denote as ERS) is modified with organic compound containing hydrophobic groups and "pinning" groups by covalent bond and then covered with a layer of hydrophilic organic compound by chemical adsorption to achieve excellent water dispersibility. Resultant ERS is homogeneously dispersed in water with a size of about 4-8 nm like a micro-emulsion system and can be easily injected into the macro or nano channels of ultra-low permeability reservoirs. The hydrophobic nanosilica core can be released from the aqueous delivery system owing to its strong dependence on the environmental variation from normal condition to injection wells (such as pH and salinity). Then the exposed silica nanoparticles form a thin layer on the surface of narrow pore throat, leading to the wettability from water-wet to oil-wet. More importantly, the two rock cores with different permeability were surface treated with ERS dispersion with a concentration of 2 g/L, exhibit great reduce of water injection pressure by 57.4 and 39.6%, respectively, which shows great potential for exploitation of crude oil from ultra-low permeability reservoirs during water flooding. [Figure not available: see fulltext.

  20. Rotatable Small Permanent Magnet Array for Ultra-Low Field Nuclear Magnetic Resonance Instrumentation: A Concept Study.

    Science.gov (United States)

    Vogel, Michael W; Giorni, Andrea; Vegh, Viktor; Pellicer-Guridi, Ruben; Reutens, David C

    2016-01-01

    We studied the feasibility of generating the variable magnetic fields required for ultra-low field nuclear magnetic resonance relaxometry with dynamically adjustable permanent magnets. Our motivation was to substitute traditional electromagnets by distributed permanent magnets, increasing system portability. The finite element method (COMSOL®) was employed for the numerical study of a small permanent magnet array to calculate achievable magnetic field strength, homogeneity, switching time and magnetic forces. A manually operated prototype was simulated and constructed to validate the numerical approach and to verify the generated magnetic field. A concentric small permanent magnet array can be used to generate strong sample pre-polarisation and variable measurement fields for ultra-low field relaxometry via simple prescribed magnet rotations. Using the array, it is possible to achieve a pre-polarisation field strength above 100 mT and variable measurement fields ranging from 20-50 μT with 200 ppm absolute field homogeneity within a field-of-view of 5 x 5 x 5 cubic centimetres. A dynamic small permanent magnet array can generate multiple highly homogeneous magnetic fields required in ultra-low field nuclear magnetic resonance (NMR) and magnetic resonance imaging (MRI) instruments. This design can significantly reduce the volume and energy requirements of traditional systems based on electromagnets, improving portability considerably.

  1. Neutron transmutation doped Ge bolometers

    Science.gov (United States)

    Haller, E. E.; Kreysa, E.; Palaio, N. P.; Richards, P. L.; Rodder, M.

    1983-01-01

    Some conclusions reached are as follow. Neutron Transmutation Doping (NTD) of high quality Ge single crystals provides perfect control of doping concentration and uniformity. The resistivity can be tailored to any given bolometer operating temperature down to 0.1 K and probably lower. The excellent uniformity is advantaged for detector array development.

  2. Investigations of solution-processed charge generation unit with low concentration of small molecule doped in p-type/HAT-CN{sub 6} for tandem OLED

    Energy Technology Data Exchange (ETDEWEB)

    Talik, N.A., E-mail: azrina_talik@hotmail.com [Low Dimensional Material Research Centre (LDMRC), Physics Dept., Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Yeoh, K.H. [Low Dimensional Material Research Centre (LDMRC), Physics Dept., Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Centre for Photonics and Advanced Materials Research (CPR), Lee Kong Chian Faculty of Engineering and Science, University Tunku Abdul Rahman, 43000 Kajang, Selangor (Malaysia); Ng, C.Y.B. [Low Dimensional Material Research Centre (LDMRC), Physics Dept., Faculty of Science, University of Malaya, 50603 Kuala Lumpur (Malaysia); Tan, C.Y. [Centre of Advanced Manufacturing & Material Processing (AMMP), Department of Mechanical Engineering, Faculty of Engineering, University of Malaya, 50603 Kuala Lumpur (Malaysia); Yap, B.K., E-mail: kbyap@uniten.edu.my [Centre of Microelectronic and Nano Engineering (CeMNE), College of Engineering, Universiti Tenaga Nasional, 43000 Kajang, Selangor (Malaysia)

    2016-01-15

    We investigated the charge generation and injection mechanism in solution processed charge generation unit (CGU) used in our high performance tandem organic light emitting diode (OLED) via capacitance–voltage (C–V) and current density–voltage (J–V) measurements. By doping 2 wt% of small molecule 1,1-bis-(4-bis(4-tolyl)-aminophenyl) cyclohexene (TAPC) into Poly (N-vinylcarbazole) (PVK) as p-type layer of the CGU, we obtained more than two folds improvement in the tandem device efficiency compared to single device. The performance improvement of the TAPC doped CGU could be attributed to low built-in potential, large vacuum level shift as well as high charge density for efficient charge generation. - Highlights: • Charge-generation and injection mechanism in CGU for tandem OLED is investigated. • Small molecule, TAPC doped in p-type/HAT-CN{sub 6} has been used for tandem OLED. • The improvement attributes to the lower V{sub bi} and larger ΔV{sub L} in doped layer. • Narrower W and high carrier density also contribute to efficiency improvement.

  3. Investigations of solution-processed charge generation unit with low concentration of small molecule doped in p-type/HAT-CN6 for tandem OLED

    International Nuclear Information System (INIS)

    Talik, N.A.; Yeoh, K.H.; Ng, C.Y.B.; Tan, C.Y.; Yap, B.K.

    2016-01-01

    We investigated the charge generation and injection mechanism in solution processed charge generation unit (CGU) used in our high performance tandem organic light emitting diode (OLED) via capacitance–voltage (C–V) and current density–voltage (J–V) measurements. By doping 2 wt% of small molecule 1,1-bis-(4-bis(4-tolyl)-aminophenyl) cyclohexene (TAPC) into Poly (N-vinylcarbazole) (PVK) as p-type layer of the CGU, we obtained more than two folds improvement in the tandem device efficiency compared to single device. The performance improvement of the TAPC doped CGU could be attributed to low built-in potential, large vacuum level shift as well as high charge density for efficient charge generation. - Highlights: • Charge-generation and injection mechanism in CGU for tandem OLED is investigated. • Small molecule, TAPC doped in p-type/HAT-CN 6 has been used for tandem OLED. • The improvement attributes to the lower V bi and larger ΔV L in doped layer. • Narrower W and high carrier density also contribute to efficiency improvement.

  4. Concentration and electrode material dependence of the voltammetric response of iodide on platinum, glassy carbon and boron-doped diamond in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide

    International Nuclear Information System (INIS)

    Bentley, Cameron L.; Bond, Alan M.; Hollenkamp, Anthony F.; Mahon, Peter J.; Zhang, Jie

    2013-01-01

    The electro-oxidation of iodide has been investigated as a function of concentration using steady-state microelectrode voltammetry, transient cyclic voltammetry and linear-sweep semi-integral voltammetry on platinum, glassy carbon and boron-doped diamond electrodes in the room temperature ionic liquid 1-ethyl-3-methylimidazolium bis(trifluoromethanesulfonyl)imide. Two oxidation processes are observed on all of the investigated electrode materials, with the first being assigned to the oxidation of iodide to triiodide (confirmed by UV/visible spectroscopy) and the second being attributed to the oxidation of triiodide to iodine. Iodide oxidation is kinetically more facile on platinum compared to glassy carbon or boron-doped diamond. At elevated bulk iodide concentrations, the nucleation and growth of sparingly soluble electrogenerated iodine at the electrode surface was observed and imaged in situ using optical microscopy. The diffusion coefficient of iodide was determined to be 2.59 (±0.04) × 10 −7 cm 2 s −1 and independent of the bulk concentration of iodide. The steady-state iodide oxidation current measured at a platinum microelectrode was found to be a linear function of iodide concentration, as expected if there are no contributions from non-Stokesian mass-transport processes (electron hopping and/or Grotthuss-type exchange) under the investigated conditions

  5. Design of ultra-low power impulse radios

    CERN Document Server

    Apsel, Alyssa; Dokania, Rajeev

    2014-01-01

    This book covers the fundamental principles behind the design of ultra-low power radios and how they can form networks to facilitate a variety of applications within healthcare and environmental monitoring, since they may operate for years off a small battery or even harvest energy from the environment. These radios are distinct from conventional radios in that they must operate with very constrained resources and low overhead.  This book provides a thorough discussion of the challenges associated with designing radios with such constrained resources, as well as fundamental design concepts and practical approaches to implementing working designs.  Coverage includes integrated circuit design, timing and control considerations, fundamental theory behind low power and time domain operation, and network/communication protocol considerations.   • Enables detailed understanding of the design space for ultra-low power radio; • Provides detailed discussion and examples of the design of a practical low power ...

  6. Room Temperature Ultralow Threshold GaN Nanowire Polariton Laser

    KAUST Repository

    Das, Ayan

    2011-08-01

    We report ultralow threshold polariton lasing from a single GaN nanowire strongly coupled to a large-area dielectric microcavity. The threshold carrier density is 3 orders of magnitude lower than that of photon lasing observed in the same device, and 2 orders of magnitude lower than any existing room-temperature polariton devices. Spectral, polarization, and coherence properties of the emission were measured to confirm polariton lasing. © 2011 American Physical Society.

  7. Nanometer emittance ultralow charge beams from rf photoinjectors

    Directory of Open Access Journals (Sweden)

    R. K. Li

    2012-09-01

    Full Text Available In this paper we discuss the generation of a new class of high brightness relativistic electron beams, characterized by ultralow charge (0.1–1 pC and ultralow normalized emittance (<50  nm. These beams are created in rf photoinjectors when the laser is focused on the cathode to very small transverse sizes (<30  μm rms. In this regime, the charge density at the cathode approaches the limit set by the extraction electric field. By shaping the laser pulse to have a cigarlike aspect ratio (the longitudinal dimension much larger than the transverse dimension and a parabolic temporal profile, the resulting space charge dominated dynamics creates a uniformly filled ellipsoidal distribution and the emittance can be nearly preserved to its thermal value. We also present a new method, based on a variation of the pepper-pot technique, for single shot measurements of the ultralow emittances for this new class of beams.

  8. Ultra-low power integrated circuit design circuits, systems, and applications

    CERN Document Server

    Li, Dongmei; Wang, Zhihua

    2014-01-01

    This book describes the design of CMOS circuits for ultra-low power consumption including analog, radio frequency (RF), and digital signal processing circuits (DSP). The book addresses issues from circuit and system design to production design, and applies the ultra-low power circuits described to systems for digital hearing aids and capsule endoscope devices. Provides a valuable introduction to ultra-low power circuit design, aimed at practicing design engineers; Describes all key building blocks of ultra-low power circuits, from a systems perspective; Applies circuits and systems described to real product examples such as hearing aids and capsule endoscopes.

  9. Airplane dopes and doping

    Science.gov (United States)

    Smith, W H

    1919-01-01

    Cellulose acetate and cellulose nitrate are the important constituents of airplane dopes in use at the present time, but planes were treated with other materials in the experimental stages of flying. The above compounds belong to the class of colloids and are of value because they produce a shrinking action on the fabric when drying out of solution, rendering it drum tight. Other colloids possessing the same property have been proposed and tried. In the first stages of the development of dope, however, shrinkage was not considered. The fabric was treated merely to render it waterproof. The first airplanes constructed were covered with cotton fabric stretched as tightly as possible over the winds, fuselage, etc., and flying was possible only in fine weather. The necessity of an airplane which would fly under all weather conditions at once became apparent. Then followed experiments with rubberized fabrics, fabrics treated with glue rendered insoluble by formaldehyde or bichromate, fabrics treated with drying and nondrying oils, shellac, casein, etc. It was found that fabrics treated as above lost their tension in damp weather, and the oil from the motor penetrated the proofing material and weakened the fabric. For the most part the film of material lacked durability. Cellulose nitrate lacquers, however were found to be more satisfactory under varying weather conditions, added less weight to the planes, and were easily applied. On the other hand, they were highly inflammable, and oil from the motor penetrated the film of cellulose nitrate, causing the tension of the fabric to be relaxed.

  10. Scintillation properties of transparent Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) ceramics doped with different concentrations of Pr{sup 3+}

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki; Fukabori, Akihiro; Fujimoto, Yutaka; Kamada, Kei; Yokota, Yuui; Yoshikawa, Akira; Chani, Valery [IMRAM, Tohoku University, 2-1-1 Katahira Aoba-ku, 980-8577 Sendai (Japan); Ikesue, Akio [World Labo, Co. Ltd., Mutsuno 2-4-1, Atsuta, 456-0023 Nagoya (Japan); Kataoka, Jun [School of Advanced Science and Engineering,Waseda University, Ohkubo 3-4-1, Shinjuku, 169-0072 Tokyo (Japan)

    2011-01-15

    Transparent ceramics of Pr-doped (0.2 mol%, 0.6 mol%, 1 mol%, and 2 mol%) Lu{sub 3}Al{sub 5}O{sub 12} (LuAG) scintillators produced by the sintering method are discussed. These materials were cut to the specimens with physical dimensions of 5 x 5 x 2 mm{sup 3}. Similar size specimens were also prepared from Czochralski grown Pr:LuAG single crystals to compare scintillation properties. Their transmittance and radio luminescence spectra were evaluated. All specimens were highly transparent in wavelength range above 300 nm, and intense Pr{sup 3+} 5d-4f emission was detected around 310 and 370 nm under excitation with X-ray. Under {sup 137}Cs {gamma}-ray is irradiation, 2 keV photo-absorption peaks were also clearly observed in each sample. The Pr 0.6 mol% doped LuAG ceramics demonstrated highest light yield achievable among the ceramics, and it was half of that observed in the single crystals. Under pulse X-ray excitation, the decay time constants became faster when Pr concentration increased, and. the fastest decay ({proportional_to}5.7 ns time constant) was noticed in the 2 mol% doped ceramic. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Experimental investigation of particulate emissions from a diesel engine fueled with ultralow-sulfur diesel fuel blended with diglyme

    Science.gov (United States)

    Di, Yage; Cheung, C. S.; Huang, Zuohua

    2010-01-01

    Experiments are conducted on a 4-cylinder direct-injection diesel engine using ultralow-sulfur diesel as the base fuel and diglyme as the oxygenate component to investigate the particulate emissions of the engine under five engine loads at two engine speeds of 1800 rev min -1 and 2400 rev min -1. Blended fuels containing 5%, 10.1%, 15.2%, 20.4%, 25.7% and 53% by volume of diglyme, corresponding to 2%, 4%, 6%, 8%, 10% and 20% by mass of oxygen, are studied. The study shows that with the increase of oxygen in the fuel blends, smoke opacity, particulate mass concentration, NO x concentration and brake specific particulate emission are reduced at the two engine speeds. However, the proportion of soluble organic fraction is increased. For each blended fuel, the total particle number concentration is higher while the geometric mean diameter is smaller, compared with that of ultralow-sulfur diesel, though the particle number decreases with the oxygen content of the blended fuel. Furthermore, the blended fuels also increase the number concentrations of particles smaller than 100 nm.

  12. The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

    Energy Technology Data Exchange (ETDEWEB)

    Siddiqua, Poppy; O' Leary, Stephen K., E-mail: stephen.oleary@ubc.ca [School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7 (Canada)

    2016-09-07

    Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

  13. Synthesis and characterization of Sn doped TiO{sub 2} photocatalysts: Effect of Sn concentration on the textural properties and on the photocatalytic degradation of 2,4-dichlorophenoxyacetic acid

    Energy Technology Data Exchange (ETDEWEB)

    Rangel-Vázquez, I.; Del Angel, G.; Bertin, V. [Departamento de Química, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); González, F. [Departamento de Ingeniería de Procesos e Hidráulica, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); Vázquez-Zavala, A.; Arrieta, A. [Departamento de Química, Universidad Autónoma Metropolitana-Iztapalapa, Av. San Rafael, Atlixco No 1865, México 09340 D.F. (Mexico); Padilla, J.M. [Universidad Tecnológica del Centro de Veracruz, Área de Tecnología, Av. Universidad Carretera Federal Cuitláhuac-La Tinaja No. 350, Cuitláhuac, Veracruz 94910 (Mexico); Barrera, A. [Universidad de Guadalajara, Centro Universitario de la Ciénega, Av. Universidad, Número 1115, Col. Linda Vista, Apdo. Postal 106, Ocotlán Jal. (Mexico); Ramos-Ramirez, E. [Departamento de Química, División de Ciencias Naturales y Exactas, Campus Guanajuato de la Universidad de Guanajuato Noria Alta S/N, Col. Noria Alta, Guanajuato, Gto. C.P. 36050 (Mexico)

    2015-09-15

    Abstract: TiO{sub 2} and Sn-doped TiO{sub 2} materials were prepared by sol–gel method using titanium and tin alkoxides at different Sn concentration (0.1 mol%, 0.5 mol%, 1 mol%, 3 mol% and 5 mol%). Samples were characterized by thermo gravimetric analyzer with differential scanning calorimeter (TGA–DSC), X-ray Rietveld refinement, N{sub 2} adsorption (BET), transmission electron microscopy (TEM), UV–vis spectroscopies technology and Raman spectroscopy. Only anatase phase was observed in pure TiO{sub 2}, whereas anatase and brookite were obtained in Sn-doped TiO{sub 2} samples. Sn dopant acts as a promoter in phase transformation of TiO{sub 2}. The Rietveld refinements method was used to determine the relative weight of anatase and brookite, and crystallite size as a function of Sn concentration after calcination of samples at 673 K. It was also demonstrated the incorporation of Sn{sup 4+} into the anatase TiO{sub 2} structure. Sn{sup 4+} inhibits the growth of TiO{sub 2} crystallite size, which leads to an increase of the specific surface area of TiO{sub 2}. From XRD analysis, the solid solution limit of Sn{sup 4+} into TiO{sub 2} is 5 mol% Sn. The photocatalytic activity on Sn{sup 4+} doped TiO{sub 2} was determined for the 2,4-dichlorophenoxyacetic acid reaction. The maximum in activity was attributed to the coexistence of anatase and brookite phases in the appropriate ratio and crystallite size.

  14. A programmable ultra-low noise X-band exciter.

    Science.gov (United States)

    MacMullen, A; Hoover, L R; Justice, R D; Callahan, B S

    2001-07-01

    A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.

  15. Note: Ultra-low birefringence dodecagonal vacuum glass cell

    Energy Technology Data Exchange (ETDEWEB)

    Brakhane, Stefan, E-mail: brakhane@iap.uni-bonn.de; Alt, Wolfgang; Meschede, Dieter; Robens, Carsten; Moon, Geol; Alberti, Andrea [Institut für Angewandte Physik, Universität Bonn, Wegelerstr. 8, D-53115 Bonn (Germany)

    2015-12-15

    We report on an ultra-low birefringence dodecagonal glass cell for ultra-high vacuum applications. The epoxy-bonded trapezoidal windows of the cell are made of SF57 glass, which exhibits a very low stress-induced birefringence. We characterize the birefringence Δn of each window with the cell under vacuum conditions, obtaining values around 10{sup −8}. After baking the cell at 150 °C, we reach a pressure below 10{sup −10} mbar. In addition, each window is antireflection coated on both sides, which is highly desirable for quantum optics experiments and precision measurements.

  16. type doping in the channel of graphene nanoribbon

    Indian Academy of Sciences (India)

    type doping in the channel is better with smaller supply voltage compared to higher supply voltage. On increasing the n -type doping concentration, we obtained better on-current and output characteristics in comparison with undoped and p ...

  17. Non-invasive paper-based microfluidic device for ultra-low detection of urea through enzyme catalysis

    Science.gov (United States)

    Suresh, Vignesh; Qunya, Ong; Kanta, Bera Lakshmi; Yuh, Lee Yeong; Chong, Karen S. L.

    2018-03-01

    This work describes the design, fabrication and characterization of a paper-based microfluidic device for ultra-low detection of urea through enzyme catalysis. The microfluidic system comprises an entry port, a fluidic channel, a reaction zone and two electrodes (contacts). Wax printing was used to create fluidic channels on the surface of a chromatography paper. Pre-conceptualized designs of the fluidic channel are wax-printed on the paper substrate while the electrodes are screen-printed. The paper printed with wax is heated to cause the wax reflow along the thickness of the paper that selectively creates hydrophilic and hydrophobic zones inside the paper. Urease immobilized in the reaction zone catalyses urea into releasing ions and, thereby, generating a current flow between the electrodes. A measure of current with respect to time at a fixed potential enables the detection of urea. The methodology enabled urea concentration down to 1 pM to be detected. The significance of this work lies in the use of simple and inexpensive paper-based substrates to achieve detection of ultra-low concentrations of analytes such as urea. The process is non-invasive and employs a less cumbersome two-electrode assembly.

  18. Theoretical optimization of base doping concentration for radiation resistance of InGaP subcells of InGaP/GaAs/Ge based on minority-carrier lifetime

    International Nuclear Information System (INIS)

    Elfiky, Dalia; Yamaguchi, Masafumi; Sasaki, Takuo

    2010-01-01

    One of the fundamental objectives for research and development of space solar cells is to improve their radiation resistance. InGaP solar cells with low base carrier concentrations under low-energy proton irradiations have shown high radiation resistances. In this study, an analytical model for low-energy proton radiation damage to InGaP subcells based on a fundamental approach for radiative and nonradiative recombinations has been proposed. The radiation resistance of InGaP subcells as a function of base carrier concentration has been analyzed by using the radiative recombination lifetime and damage coefficient K for the minority-carrier lifetime of InGaP. Numerical analysis shows that an InGaP solar cell with a lower base carrier concentration is more radiation-resistant. Satisfactory agreements between analytical and experimental results have been obtained, and these results show the validity of the analytical procedure. The damage coefficients for minority-carrier diffusion length and carrier removal rate with low-energy proton irradiations have been observed to be dependent on carrier concentration through this study. As physical mechanisms behind the difference observed between the radiation-resistant properties of various base doping concentrations, two mechanisms, namely, the effect of a depletion layer as a carrier collection layer and generation of the impurity-related complex defects due to low-energy protons stopping within the active region, have been proposed. (author)

  19. Doping droops.

    Science.gov (United States)

    Chaturvedi, Aditi; Chaturvedi, Harish; Kalra, Juhi; Kalra, Sudhanshu

    2007-01-01

    Drug abuse is a major concern in the athletic world. The misconception among athletes and their coaches is that when an athlete breaks a record it is due to some "magic ingredient" and not because of training, hard work, mental attitude and championship performance. The personal motivation to win in competitive sports has been intensified by national, political, professional and economic incentives. Under this increased pressure athletes have turned to finding this "magic ingredient". Athlete turns to mechanical (exercise, massage), nutritional (vitamins, minerals), pharmacological (medicines) or gene therapies to have an edge over other players. The World Anti-Doping Agency (WADA) has already asked scientists to help find ways to prevent gene therapy from becoming the newest form of doping. The safety of the life of athletes is compromised with all forms of doping techniques, be it a side effect of a drug or a new technique of gene doping.

  20. Ultra-low energy storage ring at FLAIR

    International Nuclear Information System (INIS)

    Welsch, Carsten P.; Papash, A. I.; Gorda, O.; Harasimowicz, J.; Karamyshev, O.; Karamysheva, G.; Newton, D.; Panniello, M.; Putignano, M.; Siggel-King, M. R. F.; Smirnov, A.

    2012-01-01

    The Ultra-low energy electrostatic Storage Ring (USR) at the future Facility for Low-energy Antiproton and Ion Research (FLAIR) will provide cooled beams of antiprotons in the energy range between 300 keV down to 20 keV and possibly less. The USR has been completely redesigned over the past three years. The ring structure is based on a “split achromat” lattice that allows in-ring experiments with internal gas jet target. Beam parameters might be adjusted in a wide range: from very short pulses in the nanosecond regime to a Coasting beam. In addition, a combined fast and slow extraction scheme was developed that allows for providing external experiments with cooled beams of different time structure. Detailed investigations of the USR, including studies into the ring’s long term beam dynamics, life time, equilibrium momentum spread and equilibrium lateral spread during collisions with an internal target were carried out. New tools and beam handling techniques for diagnostics of ultra-low energy ions at beam intensities less than 10 6 were developed by the QUASAR Group. In this paper, progress on the USR project will be presented with an emphasis on the expected beam parameters available to the experiments at FLAIR.

  1. Ultralow friction of ink-jet printed graphene flakes.

    Science.gov (United States)

    Buzio, R; Gerbi, A; Uttiya, S; Bernini, C; Del Rio Castillo, A E; Palazon, F; Siri, A S; Pellegrini, V; Pellegrino, L; Bonaccorso, F

    2017-06-08

    We report the frictional response of few-layer graphene (FLG) flakes obtained by the liquid phase exfoliation (LPE) of pristine graphite. To this end, we inkjet print FLG on bare and hexamethyldisilazane-terminated SiO 2 substrates, producing micrometric patterns with nanoscopic roughness that are investigated by atomic force microscopy. Normal force spectroscopy and atomically-resolved morphologies indicate reduced surface contamination by solvents after a vacuum annealing process. Notably, the printed FLG flakes show ultralow friction comparable to that of micromechanically exfoliated graphene flakes. Lubricity is retained on flakes with a lateral size of a few tens of nanometres, and with a thickness as small as ∼2 nm, confirming the high crystalline quality and low defects density in the FLG basal plane. Surface exposed step edges exhibit the highest friction values, representing the preferential sites for the origin of the secondary dissipative processes related to edge straining, wear or lateral displacement of the flakes. Our work demonstrates that LPE enables fundamental studies on graphene friction to the single-flake level. The capability to deliver ultralow-friction-graphene over technologically relevant substrates, using a scalable production route and a high-throughput, large-area printing technique, may also open up new opportunities in the lubrication of micro- and nano-electromechanical systems.

  2. Effect of doping concentration and annealing temperature on luminescence properties of Y{sub 2}O{sub 3}:Eu{sup 3+} nanophosphor prepared by colloidal precipitation method

    Energy Technology Data Exchange (ETDEWEB)

    Siddaramana Gowd, G.; Kumar Patra, Manoj; Songara, Sandhya; Shukla, Anuj; Mathew, Manoth; Raj Vadera, Sampat [Materials Development Group, Defence Laboratory, Jodhpur (India); Kumar, Narendra, E-mail: nkjainjd@yahoo.com [Materials Development Group, Defence Laboratory, Jodhpur (India)

    2012-08-15

    Eu{sup 3+} doped Y{sub 2}O{sub 3} nanophosphors have been synthesized using the simple colloidal precipitation method. Doping of Eu{sup 3+} ions in host yttria lattice has been achieved through slow re-crystallization process under wet-chemical conditions followed by annealing at high temperatures (300-1400 Degree-Sign C). The nanophosphors were characterized by using powder X-ray diffraction (XRD), thermogravimetric analysis (TGA), atomic force microscopy (AFM) and spectrofluorometer techniques. XRD analysis reveals formation of pure cubic phase of Y{sub 2}O{sub 3} in samples annealed at 700 Degree-Sign C or above. Further, the XRD data was successfully used to retrieve the crystallite size and size distribution from powder samples using the FW((1/5)/(4/5))M method. Crystallite size (11-50 nm) extracted from XRD has been found to be consistent with AFM measurements. The PL emission spectra of nanophosphors show bright red emission at 612 nm due to hypersensitive electric dipole (ED) {sup 5}D{sub 0}-{sup 7}F{sub 2} transition of Eu{sup 3+} ions in Y{sub 2}O{sub 3} lattice. Further, photoluminescence studies indicate that optimum value of the Eu{sup 3+} to get best luminescence properties is 12 at%. Surface conjugations of these nanophosphors with water soluble dextran biomolecules have also been performed. Surface conjugated rare earth nanophosphors have great potential for bio-applications. - Highlights: Black-Right-Pointing-Pointer Surfactant and catalyst free synthesis of Eu{sup 3+} doped Y{sub 2}O{sub 3} nanophosphor showing bright red emission at 612 nm. Black-Right-Pointing-Pointer Optimization of reaction conditions and Eu{sup 3+}dopant concentration to achieve high luminescence efficiency. Black-Right-Pointing-Pointer Estimation of crystallite size and size distribution of nanophosphor from XRD data. Black-Right-Pointing-Pointer Surface conjugation of Eu{sup 3+} doped Y{sub 2}O{sub 3} nanophosphor with dextran biomolecules.

  3. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  4. Neutron transmutation doping of polycrystalline silicon

    International Nuclear Information System (INIS)

    Cleland, J.W.; Westbrook, R.D.; Wood, R.F.; Young, R.T.

    1976-04-01

    Chemical vapor deposition (CVD) of doped silane has been used by others to deposit a polycrytalline silicon film (polysil) on metal or graphite substrates, but dopant migration to grain boundaries during deposition apparently prohibits attaining a uniform or desired dopant concentration. In contrast, we have used neutron transmutation doping to introduce a uniform phosphorus dopant concentration in commercially available undoped CVD polysil at doping concentrations greater than or equal to 2 x 10 15 cm -3 . Radiation damage annealing to 800 0 C did not indicate dopant migration. Carrier mobility increased with doping concentration and the minority carrier lifetime (MCL) appears to be comparable to that of neutron transmutation doped (NTD) single crystal Si. Application of this technique to photovoltaic solar cell fabrication is discussed

  5. Low Concentration Fe-Doped Alumina Catalysts Using Sol-Gel and Impregnation Methods: The Synthesis, Characterization and Catalytic Performance during the Combustion of Trichloroethylene

    Directory of Open Access Journals (Sweden)

    Carolina Solis Maldonado

    2014-03-01

    Full Text Available The role of iron in two modes of integration into alumina catalysts was studied at 0.39 wt% Fe and tested in trichloroethylene combustion. One modified alumina was synthesized using the sol-gel method with Fe added in situ during hydrolysis; another modification was performed using calcined alumina, prepared using the sol-gel method and impregnated with Fe. Several characterization techniques were used to study the level of Fe modification in the γ-Al2O3 phase formed and to correlate the catalytic properties during trichloroethylene (TCE combustion. The introduction of Fe in situ during the sol-gel process influenced the crystallite size, and three iron species were generated, namely, magnetite, maghemite and hematite. The impregnated Fe-alumina formed hematite and maghemite, which were highly dispersed on the γ-Al2O3 surface. The X-ray photoelectron spectra (XPS, FT-IR and Mössbauer spectroscopy analyses revealed how Fe interacted with the γ-Al2O3 lattice in both catalysts. The impregnated Fe-catalyst showed the best catalytic performance compared to the catalyst that was Fe-doped in situ by the sol-gel method; both had better catalytic activity than pure alumina. This difference in activity was correlated with the accessibility of the reactants to the hematite iron species on the surface. The chlorine poisoning for all three catalysts was less than 1.8%.

  6. Low Concentration Fe-Doped Alumina Catalysts Using Sol-Gel and Impregnation Methods: The Synthesis, Characterization and Catalytic Performance during the Combustion of Trichloroethylene.

    Science.gov (United States)

    Maldonado, Carolina Solis; De la Rosa, Javier Rivera; Lucio-Ortiz, Carlos J; Hernández-Ramírez, Aracely; Barraza, Felipe F Castillón; Valente, Jaime S

    2014-03-12

    The role of iron in two modes of integration into alumina catalysts was studied at 0.39 wt% Fe and tested in trichloroethylene combustion. One modified alumina was synthesized using the sol-gel method with Fe added in situ during hydrolysis; another modification was performed using calcined alumina, prepared using the sol-gel method and impregnated with Fe. Several characterization techniques were used to study the level of Fe modification in the γ-Al₂O₃ phase formed and to correlate the catalytic properties during trichloroethylene (TCE) combustion. The introduction of Fe in situ during the sol-gel process influenced the crystallite size, and three iron species were generated, namely, magnetite, maghemite and hematite. The impregnated Fe-alumina formed hematite and maghemite, which were highly dispersed on the γ-Al₂O 3 surface. The X-ray photoelectron spectra (XPS), FT-IR and Mössbauer spectroscopy analyses revealed how Fe interacted with the γ-Al₂O₃ lattice in both catalysts. The impregnated Fe-catalyst showed the best catalytic performance compared to the catalyst that was Fe-doped in situ by the sol-gel method; both had better catalytic activity than pure alumina. This difference in activity was correlated with the accessibility of the reactants to the hematite iron species on the surface. The chlorine poisoning for all three catalysts was less than 1.8%.

  7. An ultralow power wireless intraocular pressure monitoring system

    International Nuclear Information System (INIS)

    Liu Demeng; Mei Niansong; Zhang Zhaofeng

    2014-01-01

    This paper describes an ultralow power wireless intraocular pressure (IOP) monitoring system that is dedicated to sensing and transferring intraocular pressure of glaucoma patients. Our system is comprised of a capacitive pressure sensor, an application-specific integrated circuit, which is designed on the SMIC 180 nm process, and a dipole antenna. The system is wirelessly powered and demonstrates a power consumption of 7.56 μW at 1.24 V during continuous monitoring, a significant reduction in active power dissipation compared to existing work. The input RF sensitivity is −13 dBm. A significant reduction in input RF sensitivity results from the reduction of mismatch time of the ASK modulation caused by FM0 encoding. The system exhibits an average error of ± 1.5 mmHg in measured pressure. Finally, a complete IOP system is demonstrated in the real biological environment, showing a successful reading of the pressure of an eye. (semiconductor integrated circuits)

  8. Chromatic dispersion effects in ultra-low coherence interferometry

    Energy Technology Data Exchange (ETDEWEB)

    Lychagov, V V; Ryabukho, V P [N.G.Chernyshevsky Saratov State University (Russian Federation)

    2015-06-30

    We consider the properties of an interference signal shift from zero-path-difference position in the presence of an uncompensated dispersive layer in one of the interferometer arms. It is experimentally shown that in using an ultra-low coherence light source, the formation of the interference signal is also determined by the group velocity dispersion, which results in a nonlinear dependence of the position of the interference signal on the geometrical thickness of the dispersive layer. The discrepancy in the dispersive layer and compensator refractive indices in the third decimal place is experimentally shown to lead to an interference signal shift that is an order of magnitude greater than the pulse width. (interferometry)

  9. A Neuron Model Based Ultralow Current Sensor System for Bioapplications

    Directory of Open Access Journals (Sweden)

    A. K. M. Arifuzzman

    2016-01-01

    Full Text Available An ultralow current sensor system based on the Izhikevich neuron model is presented in this paper. The Izhikevich neuron model has been used for its superior computational efficiency and greater biological plausibility over other well-known neuron spiking models. Of the many biological neuron spiking features, regular spiking, chattering, and neostriatal spiny projection spiking have been reproduced by adjusting the parameters associated with the model at hand. This paper also presents a modified interpretation of the regular spiking feature in which the firing pattern is similar to that of the regular spiking but with improved dynamic range offering. The sensor current ranges between 2 pA and 8 nA and exhibits linearity in the range of 0.9665 to 0.9989 for different spiking features. The efficacy of the sensor system in detecting low amount of current along with its high linearity attribute makes it very suitable for biomedical applications.

  10. Impact of incoherent pumping field and Er3+ ion concentration on group velocity and index of refraction in an Er3+-doped YAG crystal

    International Nuclear Information System (INIS)

    Jafarzadeh, Hossein; Asadpour, Seyyed Hossein; Soleimani, H Rahimpour

    2015-01-01

    The effect of Er 3+ ion concentration and incoherent pumping field on the refractive index and group index in an Er 3+ : YAG crystal is investigated. It is shown that under different concentrations of Er 3+ ion in the crystal, the index of refraction and absorption can be changed and a high index of refraction is accompanied by amplification in the medium. Also, it is shown that with the switching from subluminal to superluminal, or vice versa, light propagation can be obtained by different concentrations of Er 3+ ions in the crystal. (paper)

  11. Ultra-low dispersion spectroscopy of stars and galaxies

    International Nuclear Information System (INIS)

    Bappu, M.K.V.; Parthasarathy, M.

    1977-01-01

    Application of ultra-low dispersion spectroscopy 10,000 A mm - 1 , is described to study the nuclei of elliptical galaxies, the quasi-stellar objects and for the discovery of faint OB stars, reddened stars and red stars. The instrument used is an f/2 slitless spectrograph with a three degree quartz prism at the Cassegrain focus of the 102-cm Ritchey-Chratien reflector at Kavalur. The spectra cover a field of 40 minutes of arc and the dispersion is 10,000 A mm - 1 . Ultra-low dispersion spectra (microspectra) were obtained for fifteen elliptical and three SO galaxies from the list of Ekers and Ekers (1973) who classified them as compact and extended sources from the observations of radio emission at 6 cms. From an analysis of micro-spectra and from direct photographs with graded exposure times, it is found that all compact radio galaxies in the Ekers list also have optically compact nuclei. Some of these elliptical galaxies with compact nuclei show enhancement of intensity in the blue violet region. From an examination of microspectra of forty-three of the known quasi-stellar objects of different redshifts it is found that the most striking characteristic of the spectra is their flat appearance. This characteristic flatness is also noticed in the microspectrum of the large redshift quasi-stellar objects like OH 471 and OQ 172 which do not have UV excess. Because of this characteristic difference in the appearance of the microspectra of the quasi-stellar objects and stellar objects, it is possible to detect new OSO's with this technique. An application of this technique to detect red stars in our galaxy and in the Large Magellanic cloud is discussed. (author)

  12. Ultra-low pollutant emission combustion method and apparatus

    International Nuclear Information System (INIS)

    Khinkis, M.J.

    1992-01-01

    This patent describes a method for ultra-low pollutant emission combustion of fossil fuel. It comprises: introducing into a primary combustion chamber a first fuel portion of about 1 percent to about 20 percent of a total fuel to be combusted; introducing primary combustion air into the primary combustion chamber; introducing a first portion of water into the primary combustion chamber, having a first water heat capacity equivalent to a primary combustion air heat capacity of one of a primary combustion air amount of about 10 percent to about 60 percent of the first stoichiometirc requirement for complete combustion of the first fuel portion and an excess primary combustion air amount of about 20 percent to about 150 percent of the first stoichiometric requirement for complete combustion of the first fuel portion; burning the first fuel portion with the primary combustion air in the primary combustion chamber at a temperature abut 2000 degrees F to about 2700 degrees F producing initial combustion products; passing the initial combustion products into a secondary combustion chamber; introducing into the secondary combustion chamber a second fuel portion of about 80 percent to about 99 percent of the total fuel to be combusted; introducing secondary combustion air into the secondary combustion chamber in an amount of about 105 percent to about 130 percent of a second stoichiometric requirement for complete combustion of the second fuel portion; introducing a second portion of water into the secondary combustion chamber; burning the second fuel portion and any remaining fuel in the initial combustion products; passing the final combustion products into a dilution chamber; introducing dilution air into the dilution chamber; discharging the ultra-low pollutant emission vitiated air form the dilution chamber

  13. Quantitative analysis of manganese concentration in manganese-doped glasses by laser-induced breakdown spectroscopy using a nanosecond ultraviolet Nd:YAG laser

    International Nuclear Information System (INIS)

    Unnikrishnan, V.K.; Nayak, Rajesh; Kartha, V.B.; Santhosh, C.; Sonavane, M.S.; Yeotikar, R.G.; Gupta, G.P.; Suri, B.M.

    2012-01-01

    Laser-induced breakdown spectroscopy (LIBS) has been well recognized as a simple, fast and direct analytical technique for the analysis of elemental analysis of multi-element materials by a number of research groups all over the world. It is based on the focusing of a high-power pulsed laser beam with a power density > 100 MW/cm 2 onto a sample surface followed by optical emission spectroscopy of the plasma produced over the surface. During the last two decades, LIBS has attracted a lot of attention, leading to an ever increasing list of applications, both in laboratory and in industry. In this work, the quantitative analysis of manganese in manganese-doped glass samples in air at atmospheric pressure has been carried out by the LIBS system assembled and optimized in the laboratory. The plasma is generated using a nanosecond ultraviolet Nd:YAG laser with an irradiance of 1x10 9 W/cm 2 on the sample surface. The spatially integrated plasma light emission was collected and imaged on to the spectrograph slit using an optical-fibre-based collection system. An Echelle spectrograph-ICCD system (Andor Mechelle ME5000-DH734-18U-03PS150) was used to record the emission spectrum. The spectrograph with an Echelle grating covers 200-975 nm spectral range in a single shot with a good wavelength resolution (0.05 nm). The detector was gated in synchronization with the laser pulse to get maximum signal-to-background (S/B) ratio. The detector gate width of 2 μs and the detector gate delay of 2 μs were chosen for recording the plasma emission signals, discriminating the continuum radiation which is intense at initial delay time less than 300 ns and decreases at later time

  14. Gene doping.

    Science.gov (United States)

    Haisma, H J; de Hon, O

    2006-04-01

    Together with the rapidly increasing knowledge on genetic therapies as a promising new branch of regular medicine, the issue has arisen whether these techniques might be abused in the field of sports. Previous experiences have shown that drugs that are still in the experimental phases of research may find their way into the athletic world. Both the World Anti-Doping Agency (WADA) and the International Olympic Committee (IOC) have expressed concerns about this possibility. As a result, the method of gene doping has been included in the list of prohibited classes of substances and prohibited methods. This review addresses the possible ways in which knowledge gained in the field of genetic therapies may be misused in elite sports. Many genes are readily available which may potentially have an effect on athletic performance. The sporting world will eventually be faced with the phenomena of gene doping to improve athletic performance. A combination of developing detection methods based on gene arrays or proteomics and a clear education program on the associated risks seems to be the most promising preventive method to counteract the possible application of gene doping.

  15. Long Distance Enhancement of Nonlinear Optical Properties Using Low Concentration of Plasmonic Nanostructures in Dye Doped Monolithic SolGel Materials (Postprint)

    Science.gov (United States)

    2016-05-31

    Incorporation of effi cient nonlinear dyes into a solid matrix at high concentration is a real challenge. This has been achieved through the sol...NIR Lambda 750 spectrometer. The nonlinear absorption measurements at 532 and 600 nm were made with the same method and on the same occasion as for

  16. Effect of structure, particle size and relative concentration of Eu3+ and Tb3+ ions on the luminescence properties of Eu3+ co-doped Y2O3:Tb nanoparticles

    International Nuclear Information System (INIS)

    Mukherjee, S; Sudarsan, V; Vatsa, R K; Tyagi, A K; Godbole, S V; Kadam, R M; Bhatta, U M

    2008-01-01

    Eu 3+ co-doped Y 2 O 3 :Tb nanoparticles were prepared by the combustion method and characterized for their structural and luminescence properties as a function of annealing temperatures and relative concentration of Eu 3+ and Tb 3+ ions. For Y 2 O 3 :Eu,Tb nanoparticles annealed at 600 and 1200 deg. C, variation in the relative intensity of excitation transitions between the 7 F 6 ground state and low spin and high spin 4f 7 5d 1 excited states of Tb 3+ is explained due to the combined effect of distortion around Y 3+ /Tb 3+ in YO 6 /TbO 6 polyhedra and the size of the nanoparticles. Increase in relative intensity of the 285 nm peak (spin-allowed transition denoted as peak B) with respect to the 310 nm peak (spin-forbidden transition denoted as peak A) with decrease of Tb 3+ concentration in the Y 2 O 3 :Eu,Tb nanoparticles heated at 1200 deg. C is explained based on two competing effects, namely energy transfer from Tb 3+ to Eu 3+ ions and quenching among the Tb 3+ ions. Back energy transfer from Tb 3+ to Eu 3+ in these nanoparticles is found to be very poor

  17. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  18. Pure and Sn-doped ZnO films produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Holmelund, E.; Schou, Jørgen; Tougaard, S.

    2002-01-01

    A new technique, metronome doping, has been used for doping of films during pulsed laser deposition (PLD). This technique makes it possible to dope continuously during film growth with different concentrations of a dopant in one deposition sequence. Films of pure and doped ZnO have been produced...

  19. Study of doping non-PMMA polymer fibre canes with UV photosensitive compounds

    DEFF Research Database (Denmark)

    Hassan, Hafeez Ul; Fasano, Andrea; Janting, Jakob

    2016-01-01

    and hollow-core TOPAS canes were doped with a solution of dopants in acetone/methanol and hexane/methanol, respectively. Doping time, solvent mixture concentration and doping temperature were optimised. A long and stepwise drying process was applied to the doped canes to ensure complete solvent removal...

  20. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

    International Nuclear Information System (INIS)

    Wang, Yaqi; Alur, Siddharth; Sharma, Yogesh; Tong, Fei; Thapa, Resham; Gartland, Patrick; Issacs-Smith, Tamara; Ahyi, Claude; Williams, John; Park, Minseo; Johnson, Mark; Paskova, Tanya; Preble, Edward A; Evans, Keith R

    2011-01-01

    Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 mΩ cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-of- merit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I–V measurements were also carried out to study the forward and reverse transportation mechanisms. (fast track communication)

  1. Morphology of Burned Ultra-low Density Fiberboards

    Directory of Open Access Journals (Sweden)

    Min Niu

    2015-09-01

    Full Text Available The synergistic effect of two fire retardants, a Si-Al compound and chlorinated paraffin, was tested on ultra-low density fiberboards (ULDFs. To further understand the mechanism of fire retardancy, morphologies of unburned and burned ULDFs were studied using a scanning electron microscope with energy dispersive spectroscopy. It was found that as the volume of the burned ULDFs shrank, some crevices appeared. In addition, less fly ash formed on the top of specimens, and more bottom ashes remained in the original framework, with a clear network of structure built by the fibers. Carbon was almost absent in the fly ash; however, the weight ratio of C in the bottom ashes reached the maximum (> 43% of the composition. Oxygen, Al, and Si appeared to have varying weight ratios for different ashes. Oxygen content increased with increasing Si and Al contents. Furthermore, Cl sharply decreased to less than 1% after combustion. Therefore, upon combustion, it was found that almost all of the substances in ULDFs, except for the Si-Al compound, were pyrolyzed to volatile carbon oxides and Cl compounds, especially the fly ash and lightweight C compounds.

  2. Hydrogen ion induced ultralow wear of PEEK under extreme load

    Science.gov (United States)

    Yan, Shuai; Wang, Anying; Fei, Jixiong; Wang, Zhenyang; Zhang, Xiaofeng; Lin, Bin

    2018-03-01

    As a high-performance engineering polymer, poly(ether ether ketone) (PEEK) is a perfect candidate material for applications under extreme working conditions. However, its high wear rate greatly shortens its service life. In this study, ultralow friction and wear between PEEK and silicon nitride (Si3N4) under extreme-load conditions (with a mean contact pressure above 100 MPa) are found in acid lubricating solutions. Both friction and wear decrease sharply with decreasing pH. At pH = 1, the friction coefficient decreases by an order of magnitude and the wear rate of the PEEK decreases by two orders of magnitude compared to the results with water lubrication. These reductions in friction and wear occur for different speed, load, and surface roughness conditions. The underlying mechanism can be attributed to the formation of hydrogen-ion-induced electrical double layers on the surfaces of PEEK and Si3N4. The combined effect of the resulting repulsive force, electro-viscosity, and low shear strength of the water layer dramatically reduces both friction and wear.

  3. Ultra-low noise miniaturized neural amplifier with hardware averaging.

    Science.gov (United States)

    Dweiri, Yazan M; Eggers, Thomas; McCallum, Grant; Durand, Dominique M

    2015-08-01

    Peripheral nerves carry neural signals that could be used to control hybrid bionic systems. Cuff electrodes provide a robust and stable interface but the recorded signal amplitude is small (concept of hardware averaging to nerve recordings obtained with cuff electrodes. An optimization procedure is developed to minimize noise and power simultaneously. The novel design was based on existing neural amplifiers (Intan Technologies, LLC) and is validated with signals obtained from the FINE in chronic dog experiments. We showed that hardware averaging leads to a reduction in the total recording noise by a factor of 1/√N or less depending on the source resistance. Chronic recording of physiological activity with FINE using the presented design showed significant improvement on the recorded baseline noise with at least two parallel operation transconductance amplifiers leading to a 46.1% reduction at N = 8. The functionality of these recordings was quantified by the SNR improvement and shown to be significant for N = 3 or more. The present design was shown to be capable of generating hardware averaging on noise improvement for neural recording with cuff electrodes, and can accommodate the presence of high source impedances that are associated with the miniaturized contacts and the high channel count in electrode arrays. This technique can be adopted for other applications where miniaturized and implantable multichannel acquisition systems with ultra-low noise and low power are required.

  4. Ultralow energy ion beam surface modification of low density polyethylene.

    Science.gov (United States)

    Shenton, Martyn J; Bradley, James W; van den Berg, Jaap A; Armour, David G; Stevens, Gary C

    2005-12-01

    Ultralow energy Ar+ and O+ ion beam irradiation of low density polyethylene has been carried out under controlled dose and monoenergetic conditions. XPS of Ar+-treated surfaces exposed to ambient atmosphere show that the bombardment of 50 eV Ar+ ions at a total dose of 10(16) cm(-2) gives rise to very reactive surfaces with oxygen incorporation at about 50% of the species present in the upper surface layer. Using pure O+ beam irradiation, comparatively low O incorporation is achieved without exposure to atmosphere (approximately 13% O in the upper surface). However, if the surface is activated by Ar+ pretreatment, then large oxygen contents can be achieved under subsequent O+ irradiation (up to 48% O). The results show that for very low energy (20 eV) oxygen ions there is a dose threshold of about 5 x 10(15) cm(-2) before surface oxygen incorporation is observed. It appears that, for both Ar+ and O+ ions in this regime, the degree of surface modification is only very weakly dependent on the ion energy. The results suggest that in the nonequilibrium plasma treatment of polymers, where the ion flux is typically 10(18) m(-2) s(-1), low energy ions (<50 eV) may be responsible for surface chemical modification.

  5. Thermal properties of superconducting bulk metallic glasses at ultralow temperatures

    International Nuclear Information System (INIS)

    Rothfuss, Daniel Simon

    2013-01-01

    This thesis describes the first investigation of thermal properties of superconducting bulk metallic glasses in the range between 6mK and 300K. Measuring the thermal conductivity provides the possibility to probe the fundamental interactions governing the heat flow in solids. At ultralow temperatures a novel contactless measuring technique was used, which is based on optical heating and paramagnetic temperature sensors that are read out by a SQUID magnetometer. Below the critical temperature T c the results can be described by resonant scattering of phonons by tunneling systems. Above T c the phonon contribution to the thermal conductivity can be described successfully within a model considering not only electrons and phonons but also localized modes as scattering centres. To expand the accessible temperature range for experiments an adiabatic nuclear demagnetization refrigerator was set up. For measuring the base temperature a novel noise thermometer was developed which enables continuous measuring of the temperature in this temperature range for the first time. Therefore the magnetic Johnson noise of a massive copper cylinder is simultaneously monitored by two SQUID magnetometers. A subsequent cross-correlation suppresses the amplifier noise by more than one order of magnitude. The thermometer was characterized between 42μK and 0.8K showing no deviation from the expected linear behaviour between the power spectral density of the thermal noise and the temperature.

  6. Ultralow temperature helium compressor for Japan Atomic Energy Research Institute

    International Nuclear Information System (INIS)

    Asakura, Hiroshi

    1988-01-01

    Ishikawajima Harima Heavy Industries Co., Ltd. started the development of an ultralow temperature helium compressor for helium liquefaction in 1984 jointly with Japan Atomic Energy Research Institute, and has delivered the first practical machine to the Superconductive Magnet Laboratory of JAERI. For a large superconductive magnet to be used in the stable state for a fusion reactor, conventional superconductive materials (NbTi, NbTi 3 Sn, etc.) must be used, being cooled forcibly with supercritical helium. The supercritical helium which is compressed above the critical pressure of 228 kPa has a stable cooling effect since the thermal conductivity does not change due to the evaporation of liquid helium. In order to maintain the temperature of the supercritical helium below 4 K before it enters a magnet, a heat exchanger is used. The compressor that IHI has developed has the ability to reduce the vapor pressure of liquid helium from atmospheric pressure to 50.7 kPa, and can attain the temperature of 3.5 K. The specification of this single stage centrifugal compressor is: mass flow rate 25 - 64 g/s, speed 80,000 rpm, adiabatic efficiency 62 - 69 %. The structure and the performance are reported. (K.I.)

  7. Impurity doping processes in silicon

    CERN Document Server

    Wang, FFY

    1981-01-01

    This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

  8. Doping front migration in intrinsically conductive polymers and its electrochemical modulation by a separate electrode

    International Nuclear Information System (INIS)

    Rahmanian, Afsaneh; Knoll, Meinhard

    2012-01-01

    Highlights: ► We modify the doping front migration process. ► The migration velocity is controlled by a separate electrode. ► The process may be used in “best use before” labels. - Abstract: We demonstrate a new method of modifying the doping front migration process in multilayer structures, enabling the control of migration velocity. The presence of two interfaces in contact with the migration layer strongly affects the migration mechanism. Electrochemical switching of an electrode at one interface may be used to control the chemical doping front migration at the second interface. The process may be used to produce ultralow-cost devices acting as electronic “best use before” labels on food and drink or “use-by” labels on drugs. Control of the migration velocity may be used as a method for weighting storage conditions (i.e. opening of a package during the measurement period increases the migration velocity).

  9. Doping the dots: doped quantum dots for luminescent solar concentrators

    NARCIS (Netherlands)

    Eilers, J.J.

    2015-01-01

    In this thesis, synthesis methods for luminescent organically capped colloidal ZnSe QDs of different sizes, ranging from 4.0 to 7.5 nm are reported. These QDs are analyzed using TEM, absorption spectroscopy, photoluminescence measurements and temperature dependent photoluminescence decay

  10. Ultra-low fouling and high antibody loading zwitterionic hydrogel coatings for sensing and detection in complex media.

    Science.gov (United States)

    Chou, Ying-Nien; Sun, Fang; Hung, Hsiang-Chieh; Jain, Priyesh; Sinclair, Andrew; Zhang, Peng; Bai, Tao; Chang, Yung; Wen, Ten-Chin; Yu, Qiuming; Jiang, Shaoyi

    2016-08-01

    For surface-based diagnostic devices to achieve reliable biomarker detection in complex media such as blood, preventing nonspecific protein adsorption and incorporating high loading of biorecognition elements are paramount. In this work, a novel method to produce nonfouling zwitterionic hydrogel coatings was developed to achieve these goals. Poly(carboxybetaine acrylamide) (pCBAA) hydrogel thin films (CBHTFs) prepared with a carboxybetaine diacrylamide crosslinker (CBAAX) were coated on gold and silicon dioxide surfaces via a simple spin coating process. The thickness of CBHTFs could be precisely controlled between 15 and 150nm by varying the crosslinker concentration, and the films demonstrated excellent long-term stability. Protein adsorption from undiluted human blood serum onto the CBHTFs was measured with surface plasmon resonance (SPR). Hydrogel thin films greater than 20nm exhibited ultra-low fouling (crosslinked, purely zwitterionic, carboxybetaine thin film hydrogel (CBHTF) coating platform. The CBHTF on a hydrophilic surface demonstrated long-term stability. By varying the crosslinker content in the spin-coated hydrogel solution, the thickness of CBHTFs could be precisely controlled. Optimized CBHTFs exhibited ultra-low nonspecific protein adsorption below 5ng/cm(2) measured by a surface plasmon resonance (SPR) sensor, and their 3D architecture allowed antibody loading to reach 693ng/cm(2). This strategy provides a facile method to modify SPR biosensor chips with an advanced nonfouling material, and can be potentially expanded to a variety of implantable medical devices and diagnostic biosensors. Copyright © 2016 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  11. Disorder-induced enhancement of conductance in doped nanowires

    Institute of Scientific and Technical Information of China (English)

    Xu Ning; Wang Bao-Lin; Sun Hou-Qian; Kong Fan-Jie

    2010-01-01

    A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

  12. Ultra-low field MRI food inspection system prototype

    Energy Technology Data Exchange (ETDEWEB)

    Kawagoe, Satoshi, E-mail: s133413@edu.tut.ac.jp; Toyota, Hirotomo; Hatta, Junichi; Ariyoshi, Seiichiro; Tanaka, Saburo, E-mail: tanakas@ens.tut.ac.jp

    2016-11-15

    Highlights: • We have developed a ULF-MRI system using HTS-SQUID for food inspection. • We developed a compact magnetically shielded box to attenuate environmental noise. • The 2D-MR image was reconstructed from the grid processing data using 2D-FFT method. • The 2D-MR images of a disk-shaped and a multiple cell water sample were obtained. • The results showed the possibility of applying the ULF-MRI system to food inspection. - Abstract: We develop an ultra-low field (ULF) magnetic resonance imaging (MRI) system using a high-temperature superconducting quantum interference device (HTS-SQUID) for food inspection. A two-dimensional (2D)-MR image is reconstructed from the grid processing raw data using the 2D fast Fourier transform method. In a previous study, we combined an LC resonator with the ULF-MRI system to improve the detection area of the HTS-SQUID. The sensitivity was improved, but since the experiments were performed in a semi-open magnetically shielded room (MSR), external noise was a problem. In this study, we develop a compact magnetically shielded box (CMSB), which has a small open window for transfer of a pre-polarized sample. Experiments were performed in the CMSB and 2D-MR images were compared with images taken in the semi-open MSR. A clear image of a disk-shaped water sample is obtained, with an outer dimension closer to that of the real sample than in the image taken in the semi-open MSR. Furthermore, the 2D-MR image of a multiple cell water sample is clearly reconstructed. These results show the applicability of the ULF-MRI system in food inspection.

  13. In situ quantification of ultra-low O2 concentrations in oxygen minimum zones

    DEFF Research Database (Denmark)

    Larsen, Morten; Lehner, Philipp; Borisov, Sergey M.

    2016-01-01

    based on the palladium(II)-benzoporphyrin luminophore, immobilized in a perfluorinated matrix with high O2 permeability. The trace sensor has a detection limit of ∼5 nmol L−1 with a dynamic range extending up to ∼2 μmol L−1. The sensor demonstrates a response time ..., and fully reversible response to hydrostatic pressure and temperature. The sensor showed excellent stability for continuously measurements during depth profiling in Oxygen Minimum Zones (OMZ). The novel sensor was deployed in situ using a Trace Oxygen Profiler instrument (TOP) equipped with two additional O...

  14. Wafer-Scale Leaning Silver Nanopillars for Molecular Detection at Ultra-Low Concentrations

    DEFF Research Database (Denmark)

    Wu, Kaiyu; Rindzevicius, Tomas; Schmidt, Michael Stenbæk

    2015-01-01

    are investigated. Theoretical results show that isolated Ag NPs essentially support two localized surface plasmon (LSP) modes. The most prominent LSP resonance is observed in the near-infrared region (∼800 nm) and can be tuned by changing the diameter of the silicon nanopillars (Si NPs). The corresponding electric...

  15. Doping and thrombosis in sports.

    Science.gov (United States)

    Lippi, Giuseppe; Banfi, Giuseppe

    2011-11-01

    Historically, humans have long sought to enhance their "athletic" performance to increase body weight, aggressiveness, mental concentration and physical strength, contextually reducing fatigue, pain, and improving recovery. Although regular training is the mainstay for achieving these targets, the ancillary use of ergogenic aids has become commonplace in all sports. The demarcation between ergogenic aids and doping substances or practices is continuously challenging and mostly based on perceptions regarding the corruption of the fairness of competition and the potential side effects or adverse events arising from the use of otherwise unnecessary ergogenic substances. A kaleidoscope of side effects has been associated with the use of doping agents, including behavioral, skeletal, endocrinologic, metabolic, hemodynamic, and cardiovascular imbalances. Among the various doping substances, the most striking association with thrombotic complications has been reported for androgenic anabolic steroids (i.e., cardiomyopathy, fatal and nonfatal arrhythmias, myocardial infarction [MI], intracardiac thrombosis, stroke, venous thromboembolism [VTE], limb arterial thrombosis, branch retinal vein occlusion, cerebral venous sinus thrombosis) and blood boosting (i.e., VTE and MI, especially for epoetin and analogs). The potential thrombotic complication arising from misuse of other doping agents such as the administration of cortisol, growth hormone, prolactin, cocaine, and platelet-derived preparations is instead speculative or anecdotal at best. The present article provides an overview on the epidemiological association as well as the underlying biochemical and biological mechanisms linking the practice of doping in sports with the development of thrombosis. © Thieme Medical Publishers.

  16. Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers

    Science.gov (United States)

    Kohen, David; Vohra, Anurag; Loo, Roger; Vandervorst, Wilfried; Bhargava, Nupur; Margetis, Joe; Tolle, John

    2018-02-01

    Highly doped GeSn material is interesting for both electronic and optical applications. GeSn:B is a candidate for source-drain material in future Ge pMOS device because Sn adds compressive strain with respect to pure Ge, and therefore can boost the Ge channel performances. A high B concentration is required to obtain low contact resistivity between the source-drain material and the metal contact. To achieve high performance, it is therefore highly desirable to maximize both the Sn content and the B concentration. However, it has been shown than CVD-grown GeSn:B shows a trade-off between the Sn incorporation and the B concentration (increasing B doping reduces Sn incorporation). Furthermore, the highest B concentration of CVD-grown GeSn:B process reported in the literature has been limited to below 1 × 1020 cm-3. Here, we demonstrate a CVD process where B δ-doping layers are inserted in the GeSn layer. We studied the influence of the thickness between each δ-doping layers and the δ-doping layers process conditions on the crystalline quality and the doping density of the GeSn:B layers. For the same Sn content, the δ-doping process results in a 4-times higher B doping than the co-flow process. In addition, a B doping concentration of 2 × 1021 cm-3 with an active concentration of 5 × 1020 cm-3 is achieved.

  17. Ultra-low loss nano-taper coupler for Silicon-on-Insulator ridge waveguide

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Ou, Haiyan

    2010-01-01

    A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler.......A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler....

  18. Ultra-low coupling loss fully-etched apodized grating coupler with bonded metal mirror

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

    2014-01-01

    A fully etched apodized grating coupler with bonded metal mirror is designed and demonstrated on the silicon-on-insulator platform, showing an ultra-low coupling loss of only 1.25 dB with 3 dB bandwidth of 69 nm.......A fully etched apodized grating coupler with bonded metal mirror is designed and demonstrated on the silicon-on-insulator platform, showing an ultra-low coupling loss of only 1.25 dB with 3 dB bandwidth of 69 nm....

  19. Advanced Technology for Ultra-Low Power System-on-Chip (SoC)

    Science.gov (United States)

    2017-06-01

    was proposed for lower power applications with Ioff=10pA/μm and VDD=0.5V. In this project, the optimized structure shows great potential in both Lg...AFRL-RY-WP-TR-2017-0115 ADVANCED TECHNOLOGY FOR ULTRA-LOW POWER SYSTEM-ON-CHIP (SoC) Jason Woo, Weicong Li, and Peng Lu University of California...September 2015 – 31 March 2017 4. TITLE AND SUBTITLE ADVANCED TECHNOLOGY FOR ULTRA-LOW POWER SYSTEM-ON- CHIP (SoC) 5a. CONTRACT NUMBER FA8650-15-1-7574 5b

  20. Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

    KAUST Repository

    Mansour, Ahmed

    2017-05-23

    Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

  1. Hybrid Doping of Few-Layer Graphene via a Combination of Intercalation and Surface Doping

    KAUST Repository

    Mansour, Ahmed; Kirmani, Ahmad R.; Barlow, Stephen; Marder, Seth R.; Amassian, Aram

    2017-01-01

    Surface molecular doping of graphene has been shown to modify its work function and increase its conductivity. However, the associated shifts in work function and increases in carrier concentration are highly coupled and limited by the surface coverage of dopant molecules on graphene. Here we show that few-layer graphene (FLG) can be doped using a hybrid approach, effectively combining surface doping by larger (metal-)organic molecules, while smaller molecules, such as Br2 and FeCl3, intercalate into the bulk. Intercalation tunes the carrier concentration more effectively, whereas surface doping of intercalated FLG can be used to tune its work function without reducing the carrier mobility. This multi-modal doping approach yields a very high carrier density and tunable work function for FLG, demonstrating a new versatile platform for fabricating graphene-based contacts for electronic, optoelectronic and photovoltaic applications.

  2. Ferromagnetism in doped or undoped spintronics nanomaterials

    Science.gov (United States)

    Qiang, You

    2010-10-01

    Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

  3. Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application

    International Nuclear Information System (INIS)

    Kulanthaivel, Senthilguru; Roy, Bibhas; Agarwal, Tarun; Giri, Supratim; Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S.; Maiti, Tapas K.; Banerjee, Indranil

    2016-01-01

    ABSTRACT: The present study delineates the synthesis and characterization of cobalt doped proangiogenic–osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co"2"+) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP–OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic–osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. - Highlights: • Cobalt (Co"+"2) doped hydroxyapatite (Co-HAp) can be prepared by the wet chemical method. • The concentration of Co"+"2 influences the physico-chemical properties of HAp. • Co-HAp was found to be biocompatible and osteogenic. • Co-HAp enhanced cellular VEGF secretion through HIF-1α stabilization. • The optimum biological performance of Co-HAp was achieved for 0.33% (w/w) Co"+"2 doping.

  4. The EVEREST Doping Profile Module. Version 4

    International Nuclear Information System (INIS)

    Ashby, J.; Fowler, R.; Greenough, C.

    1998-01-01

    In this report we describe the EVEREST Doping Module which forms part of the EVEREST suite of programs. The doping module is responsible for generating a neutral file which gives the acceptor and donor densities at each node the device mesh. The neutral file also contains details of the functions used to generate the doping as mesh refinement in the solver requires this. Commands allow the definition of background doping, regions of uniform doping, non-uniform doping relating to windows found in the Geometry neutral file and a user-programmable FORTRAN subroutine which computes doping concentrations as a function of position. The EVEREST suite is one of the products of the ESPRIT project EVEREST (ESPRIT 962E-17, Three-Dimensional Algorithms for a Robust and Efficient Semiconductor Simulator with Parameter Extraction). EVEREST was a four-year project supported by the European Community under the European Strategic Program for Research in Information Technology (ESPRIT) which is investigating suitable algorithms for the analysis of semiconductor devices in three dimensions, and developing software implementing the most effective of those algorithms. The original authors of the Doping Module were G.A. Duffett and M.S. Towers of University College, Swansea. (author)

  5. Transmutation doping of silicon solar cells

    Science.gov (United States)

    Wood, R. F.; Westbrook, R. D.; Young, R. T.; Cleland, J. W.

    1977-01-01

    Normal isotopic silicon contains 3.05% of Si-30 which transmutes to P-31 after thermal neutron absorption, with a half-life of 2.6 hours. This reaction is used to introduce extremely uniform concentrations of phosphorus into silicon, thus eliminating the areal and spatial inhomogeneities characteristic of chemical doping. Annealing of the lattice damage in the irradiated silicon does not alter the uniformity of dopant distribution. Transmutation doping also makes it possible to introduce phosphorus into polycrystalline silicon without segregation of the dopant at the grain boundaries. The use of neutron transmutation doped (NTD) silicon in solar cell research and development is discussed.

  6. Highly doped layer for tunnel junctions in solar cells

    Science.gov (United States)

    Fetzer, Christopher M.

    2017-08-01

    A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

  7. Polyurethane doped with low-concentration erbium

    NARCIS (Netherlands)

    Ciobanu, C.; Stoica, E.; Cascaval, C.N.; Rosu, D.; Rosu, L.; State, M.; Emandi, A.; Nemes, I.; Petrescu, F.

    2007-01-01

    ABSTRACT: Polyurethane (PU) with lactate structures inits conformation can be used as a biological and biodegradablepolymer. Polyurethane lactate (PUL) was dopedwith small quantities of an erbium (Er3þ) complex, whichhindered the N¼N group. 2,20-Dihydroxyazobenzene wasused as a ligand for the Er3þ

  8. Neutron transmutation doping of gallium arsenide

    International Nuclear Information System (INIS)

    Alexiev, D.

    1987-12-01

    Neutron transmutation doping (NTD) was studied as a means of compensating p-type Cd-doped GaAs. By introducing specific donor concentrations, the net acceptor level was measured and showed a progressive reduction. The NTD constant K = 0.32 donor atoms.cm 3 per cm 2 was also measured. Radiation damage caused by neutron bombardment was annealed and no additional traps were generated

  9. EPR in non-doped irradiated polyacetylene

    International Nuclear Information System (INIS)

    Hola, O.; Stasko, A.; Foeldesova, M.

    1993-01-01

    The influence of γ-irradiation on the paramagnetic properties of non-doped polyacetylene at low and high radiation doses has been studied and summarized. The dependence of the EPR spectra on the radiation dose in irradiated polyacetylene has been measured. No essential changes of the spin mobility as a consequence of irradiation were observed. The measurements of spin concentration confirm the high resistivity of non-doped polyacetylene to radiation. (author) 9 refs

  10. Optimizing Parameters of Axial Pressure-Compounded Ultra-Low Power Impulse Turbines at Preliminary Design

    Science.gov (United States)

    Kalabukhov, D. S.; Radko, V. M.; Grigoriev, V. A.

    2018-01-01

    Ultra-low power turbine drives are used as energy sources in auxiliary power systems, energy units, terrestrial, marine, air and space transport within the confines of shaft power N td = 0.01…10 kW. In this paper we propose a new approach to the development of surrogate models for evaluating the integrated efficiency of multistage ultra-low power impulse turbine with pressure stages. This method is based on the use of existing mathematical models of ultra-low power turbine stage efficiency and mass. It has been used in a method for selecting the rational parameters of two-stage axial ultra-low power turbine. The article describes the basic features of an algorithm for two-stage turbine parameters optimization and for efficiency criteria evaluating. Pledged mathematical models are intended for use at the preliminary design of turbine drive. The optimization method was tested at preliminary design of an air starter turbine. Validation was carried out by comparing the results of optimization calculations and numerical gas-dynamic simulation in the Ansys CFX package. The results indicate a sufficient accuracy of used surrogate models for axial two-stage turbine parameters selection

  11. Specific gravity and API gravity of biodiesel and ultra-low sulfur diesel (ULSD) blends

    Science.gov (United States)

    Biodiesel is an alternative fuel made from vegetable oils and animal fats. In 2006, the U. S. Environmental Protection Agency mandated a maximum sulfur content of 15 ppm in on-road diesel fuels. Processing to produce the new ultra-low sulfur petrodiesel (ULSD) alters specific gravity (SG) and othe...

  12. Channel coding study for ultra-low power wireless design of autonomous sensor works

    NARCIS (Netherlands)

    Zhang, P.; Huang, Li; Willems, F.M.J.

    2011-01-01

    Ultra-low power wireless design is highly demanded for building up autonomous wireless sensor networks (WSNs) for many application areas. To keep certain quality of service with limited power budget, channel coding techniques can be applied to maintain the robustness and reliability of WSNs. In this

  13. The PS 200 catching trap: A new tool for ultra-low energy antiproton physics

    International Nuclear Information System (INIS)

    Holzscheiter, M.H.; Dyer, P.L.; King, N.S.P.; Lizon, D.C.; Morgan, G.L.; Schauer, M.M.; Schecker, J.A.; Hoibraten, S.; Lewis, R.A.; Otto, T.

    1994-01-01

    Approximately one million antiprotons have been trapped and electron cooled in the PS200 catching trap from a single fast extracted pulse from LEAR. The system is described in detail, different extraction schemes are discussed, and possible applications of this instrument to ultra-low energy atomic and nuclear physics with antiprotons are mentioned

  14. Ultra-low friction and excellent elastic recovery of fullerene-like ...

    Indian Academy of Sciences (India)

    2017-08-24

    Aug 24, 2017 ... a high elastic recovery (∼90%), ultra-low friction coefficient (∼0.019) and low wear rate ... Y Meng et al .... [3] Liu D G, Tu J P, Gu C D, Hong C F, Chen R and Yang W S ... [7] Cumings J and Zettl A 2000 Science 289 602.

  15. Effect of doping on the electron transport in polyfluorene

    Energy Technology Data Exchange (ETDEWEB)

    Bajpai, Manisha, E-mail: mansa83@gmail.com [Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad, 211002 (India); Department of Physics, Banaras Hindu University, Varanasi-221005 (India); Srivastava, Ritu [Physics for Energy Harvesting Division, National Physical Laboratory (Council of Scientific and Industrial Research), Dr K. S. Krishnan Road, New Delhi 110012 (India); Dhar, Ravindra [Soft Materials Research Laboratory, Centre of Material Sciences, Institute of Interdisciplinary Studies, University of Allahabad, Allahabad, 211002 (India); Tiwari, R. S. [Department of Physics, Banaras Hindu University, Varanasi-221005 (India)

    2016-05-06

    In this paper, electron transport of pure and DMC doped polyfluorne (PF) films have been studied at various doping concentrations. Pure films show space charge limited conduction with field and temperature dependent mobility. The J–V characteristics of doped PF were ohmic at low voltages due to thermally released carriers from dopant states. At higher voltages the current density increases nonlinearly due to field dependent mobility and carrier concentration thereby filling of tail states of HOMO of the host. The conductivity of doped films were analyzed using the Unified Gaussian Disorder Model (UGDM). The carrier concentration obtained from the fitting show a non-linear dependence on doping concentration which may be due to a combined effect of thermally activated carrier generation and increased carrier mobility.

  16. Structure prediction of boron-doped graphene by machine learning

    Science.gov (United States)

    M. Dieb, Thaer; Hou, Zhufeng; Tsuda, Koji

    2018-06-01

    Heteroatom doping has endowed graphene with manifold aspects of material properties and boosted its applications. The atomic structure determination of doped graphene is vital to understand its material properties. Motivated by the recently synthesized boron-doped graphene with relatively high concentration, here we employ machine learning methods to search the most stable structures of doped boron atoms in graphene, in conjunction with the atomistic simulations. From the determined stable structures, we find that in the free-standing pristine graphene, the doped boron atoms energetically prefer to substitute for the carbon atoms at different sublattice sites and that the para configuration of boron-boron pair is dominant in the cases of high boron concentrations. The boron doping can increase the work function of graphene by 0.7 eV for a boron content higher than 3.1%.

  17. First-principles study on electronic structures and magnetic properties of Eu-doped phosphorene

    Science.gov (United States)

    Luan, Zhaohui; Zhao, Lei; Chang, Hao; Sun, Dan; Tan, Changlong; Huang, Yuewu

    2017-11-01

    The structural, electronic and magnetic properties of Eu-doped phosphorene with different doping concentrations were investigated by first-principles calculations for the first time. The calculations show that Eu-doped phosphorene systems are stable and have the large magnetic moments of more than 6 μB by 2.7, 6.25 and 12.5 at.% doping concentrations. The major contribution to the magnetic moment stems from the 4f states of Eu-doped atom. Meanwhile, Eu-doped atom introduces the impurity bands which can be changed by different doping concentrations. In order to determine the magnetic interaction, the different configurations for two Eu atoms doping in 3 × 3 × 1 phosphorene supercell were studied, which reveals that all of the configurations tend to form ferromagnetic. These results can provide references for inducing large magnetism of two-dimensional phosphorene, which are valuable for their applications in spintronic devices and novel semiconductor materials.

  18. Doped Organic Transistors.

    Science.gov (United States)

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  19. Unraveling the mechanism of molecular doping in organic semiconductors.

    Science.gov (United States)

    Mityashin, Alexander; Olivier, Yoann; Van Regemorter, Tanguy; Rolin, Cedric; Verlaak, Stijn; Martinelli, Nicolas G; Beljonne, David; Cornil, Jérôme; Genoe, Jan; Heremans, Paul

    2012-03-22

    The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no electrical effect. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Porous allograft bone scaffolds: doping with strontium.

    Directory of Open Access Journals (Sweden)

    Yantao Zhao

    Full Text Available Strontium (Sr can promote the process of bone formation. To improve bioactivity, porous allograft bone scaffolds (ABS were doped with Sr and the mechanical strength and bioactivity of the scaffolds were evaluated. Sr-doped ABS were prepared using the ion exchange method. The density and distribution of Sr in bone scaffolds were investigated by inductively coupled plasma optical emission spectrometry (ICP-OES, X-ray photoelectron spectroscopy (XPS, and energy-dispersive X-ray spectroscopy (EDS. Controlled release of strontium ions was measured and mechanical strength was evaluated by a compressive strength test. The bioactivity of Sr-doped ABS was investigated by a simulated body fluid (SBF assay, cytotoxicity testing, and an in vivo implantation experiment. The Sr molar concentration [Sr/(Sr+Ca] in ABS surpassed 5% and Sr was distributed nearly evenly. XPS analyses suggest that Sr combined with oxygen and carbonate radicals. Released Sr ions were detected in the immersion solution at higher concentration than calcium ions until day 30. The compressive strength of the Sr-doped ABS did not change significantly. The bioactivity of Sr-doped material, as measured by the in vitro SBF immersion method, was superior to that of the Sr-free freeze-dried bone and the Sr-doped material did not show cytotoxicity compared with Sr-free culture medium. The rate of bone mineral deposition for Sr-doped ABS was faster than that of the control at 4 weeks (3.28 ± 0.23 µm/day vs. 2.60 ± 0.20 µm/day; p<0.05. Sr can be evenly doped into porous ABS at relevant concentrations to create highly active bone substitutes.

  1. High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

    Science.gov (United States)

    Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

    2018-05-01

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  2. Novel Ultralow-Weight Metal Rubber Sensor System for Ultra Long-Duration Scientific Balloons, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — NanoSonic proposes to develop an innovative, ultralow mass density, and non-intrusive sensor system for ultra long duration balloons that will operate in the most...

  3. Synthesis of Antimony Doped Amorphous Carbon Films

    Science.gov (United States)

    Okuyama, H.; Takashima, M.; Akasaka, H.; Ohtake, N.

    2013-06-01

    We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

  4. Synthesis of Antimony Doped Amorphous Carbon Films

    International Nuclear Information System (INIS)

    Okuyama, H; Takashima, M; Akasaka, H; Ohtake, N

    2013-01-01

    We report the effects of antimony (Sb) doping on the electrical and optical properties of amorphous carbon (a-C:H) films grown on silicon and copper substrates by magnetron sputtering deposition. For film deposition, the mixture targets fabricated from carbon and antimony powders was used. The atomic concentration of carbon, hydrogen, and antimony, in the film deposited from the 1.0 mol% Sb containing target were 81, 17, 2 at.%, respectively. These elements were homogeneously distributed in the film. On the structural effect, the average continuous sp 2 carbon bonding networks decreased with Sb concentration increasing, and defects in the films were increased with the Sb incorporation because atomic radius of Sb atoms is twice larger size than that of carbon. The optical gap and the electrical resistivity were carried out before and after the Sb doping. The results show that optical gap dropped from 3.15 to 3.04 eV corresponding to non-doping to Sb-doping conditions, respectively. The electrical resistivity reduced from 10.5 to 1.0 MΩm by the Sb doping. These results suggest the doping level was newly formed in the forbidden band.

  5. Rare earth oxide doping in oxide cathodes

    International Nuclear Information System (INIS)

    Engelsen, Daniel den; Gaertner, Georg

    2006-01-01

    The effect on life performance and poisoning with O 2 by doping oxide cathodes with rare earth oxides and pseudo rare earth oxides, notably yttria, is qualitatively explained in terms of electrolysis of BaO during emission of electrons. Doped cathodes show less electrolysis and consume therefore less Ba during life: consequently, doped cathodes have a better life performance. However, the lower Ba-production makes doped cathodes more sensitive to oxygen poisoning. The experimentally found relation between conductivity and yttria concentration was the motive to propose a new model for the crystal imperfections in BaO. In this new imperfection model most Y 3+ -ions will combine with barium vacancies, therefore, the increase of the conductivity is modest and also the effect on the position of the Fermi level is modest. By assuming a combination of bulk and surface conductivity, the agreement between experiment and theory can be improved further

  6. Two dimensional tunable photonic crystals and n doped semiconductor materials

    International Nuclear Information System (INIS)

    Elsayed, Hussein A.; El-Naggar, Sahar A.; Aly, Arafa H.

    2015-01-01

    In this paper, we theoretically investigate the effect of the doping concentration on the properties of two dimensional semiconductor photonic band structures. We consider two structures; type I(II) that is composed of n doped semiconductor (air) rods arranged into a square lattice of air (n doped semiconductor). We consider three different shapes of rods. Our numerical method is based on the frequency dependent plane wave expansion method. The numerical results show that the photonic band gaps in type II are more sensitive to the changes in the doping concentration than those of type I. In addition, the width of the gap of type II is less sensitive to the shape of the rods than that of type I. Moreover, the cutoff frequency can be strongly tuned by the doping concentrations. Our structures could be of technical use in optical electronics for semiconductor applications

  7. Prognostic indicators of assisted reproduction technology outcomes of cycles with ultralow serum antimüllerian hormone: a multivariate analysis of over 5,000 autologous cycles from the Society for Assisted Reproductive Technology Clinic Outcome Reporting System database for 2012-2013.

    Science.gov (United States)

    Seifer, David B; Tal, Oded; Wantman, Ethan; Edul, Preeti; Baker, Valerie L

    2016-02-01

    To assess cycle outcomes when antimüllerian hormone (AMH) is ultralow (≤0.16 ng/mL) and to determine which parameters contribute to the probability of cycle cancellation and/or outcome. Retrospective analysis. Not applicable. 5,087 (7.3%) fresh and 243 (1.5%) thawed cycles with ultralow AMH values. Linear and logistic regression, comparison with age-matched cycles with normal AMH concentrations. Cancellation rate; number of retrieved oocytes, embryos, transferred embryos, and cryopreserved embryos; clinical pregnancy, live-birth, and multiple birth rates. The total cancellation rate per cycle start for fresh cycles was 54%. Of these, 38.6% of the cycles were canceled before retrieval, and 3.3% of cycles obtained no oocytes at time of retrieval. Of all retrieval attempts, 50.7% had three oocytes or fewer retrieved, and 25.1% had no embryo transfer. The live-birth rates were 9.5% per cycle start. Cycles with ultralow AMH levels compared with age-matched normal AMH cycles demonstrated more than a fivefold greater pre-retrieval cancellation rate, a twofold less live-birth rate per cycle and a 4.5-fold less embryo cryopreservation rate. Refusing treatment solely on the basis of ultralow AMH levels is not advisable, but patients should be counseled appropriately about the prognostic factors for cancellation and outcomes. Copyright © 2016 American Society for Reproductive Medicine. Published by Elsevier Inc. All rights reserved.

  8. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    International Nuclear Information System (INIS)

    Frigerio, J; Ballabio, A; Isella, G; Gallacher, K; Millar, R; Paul, D; Gilberti, V; Baldassarre, L; Ortolani, M; Milazzo, R; Napolitani, E; Maiolo, L; Minotti, A; Pecora, A; Bottegoni, F; Biagioni, P

    2017-01-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  10 19 cm −3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  10 20 cm −3 . Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved. (paper)

  9. Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

    Science.gov (United States)

    Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

    2017-11-01

    High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

  10. The influence of oxygen and nitrogen doping on GeSbTe phase-change optical recording media properties

    Energy Technology Data Exchange (ETDEWEB)

    Dimitrov, D.; Shieh, H.-P.D

    2004-03-15

    Nitrogen and oxygen doped and co-doped GeSbTe (GST) films for phase-change optical recording are investigated. It is found that the crystallization temperature increased as well as the crystalline microstructure refined by doping. The carrier-to-noise ratio (CNR) and erasability of phase-change optical disks are improved being up to 52 and 35 dB, respectively, by using an appropriate nitrogen doping or co-doping concentration in the recording layer. Optical disks with co-doped recording layer are found to be superior in the recording characteristics then the single doped recording layer disks.

  11. Silicon doped InP as an alternative plasmonic material for mid-infrared

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Han, Li; Christensen, Dennis Valbjørn

    2016-01-01

    Silicon-doped InP is grown on top of semiinsulating iron-doped and sulfur-doped InP substrates by metalorganic vapor phase epitaxy (MOVPE), and the growth parameters are adjusted to obtain various free carrier concentrations from 1.05×1019 cm-3 up to 3.28×1019 cm-3. Midinfrared (IR) reflection...

  12. Advances in highly doped upconversion nanoparticles.

    Science.gov (United States)

    Wen, Shihui; Zhou, Jiajia; Zheng, Kezhi; Bednarkiewicz, Artur; Liu, Xiaogang; Jin, Dayong

    2018-06-20

    Lanthanide-doped upconversion nanoparticles (UCNPs) are capable of converting near-infra-red excitation into visible and ultraviolet emission. Their unique optical properties have advanced a broad range of applications, such as fluorescent microscopy, deep-tissue bioimaging, nanomedicine, optogenetics, security labelling and volumetric display. However, the constraint of concentration quenching on upconversion luminescence has hampered the nanoscience community to develop bright UCNPs with a large number of dopants. This review surveys recent advances in developing highly doped UCNPs, highlights the strategies that bypass the concentration quenching effect, and discusses new optical properties as well as emerging applications enabled by these nanoparticles.

  13. Overcoming doping limits in MOVPE grown n-doped InP for plasmonic applications

    DEFF Research Database (Denmark)

    Panah, Mohammad Esmail Aryaee; Xiao, Sanshui; Lavrinenko, Andrei

    2015-01-01

    Effect of the growth parameters on carrier concentration in MOVPE grown silicon-doped InP is studied. The dopant flow, V/III ratio and substrate temperature are optimized by considering the origin of the doping limits. In addition, two different group V precursors, namely PH3 and TBP, are compare......×1019cm-3 is achieved. Optical properties of the samples are investigated by Fourier transform infrared reflection (FTIR) spectroscopy and are fitted by a Drude-Lorentz function....

  14. Nanoparticles doped film sensing based on terahertz metamaterials

    Science.gov (United States)

    Liu, Weimin; Fan, Fei; Chang, Shengjiang; Hou, Jiaqing; Chen, Meng; Wang, Xianghui; Bai, Jinjun

    2017-12-01

    A nanoparticles concentration sensor based on doped film and terahertz (THz) metamaterial has been proposed. By coating the nanoparticles doped polyvinyl alcohol (PVA) film on the surface of THz metamaterial, the effects of nanoparticle concentration on the metamaterial resonances are investigated through experiments and numerical simulations. Results show that resonant frequency of the metamaterial linearly decreases with the increment of doping concentration. Furthermore, numerical simulations illustrate that the redshift of resonance results from the changes of refractive index of the doped film. The concentration sensitivity of this sensor is 3.12 GHz/0.1%, and the refractive index sensitivity reaches 53.33 GHz/RIU. This work provides a non-contact, nondestructive and sensitive method for the detection of nanoparticles concentration and brings out a new application on THz film metamaterial sensing.

  15. An Ultra-low Frequency Modal Testing Suspension System for High Precision Air Pressure Control

    Directory of Open Access Journals (Sweden)

    Qiaoling YUAN

    2014-05-01

    Full Text Available As a resolution for air pressure control challenges in ultra-low frequency modal testing suspension systems, an incremental PID control algorithm with dead band is applied to achieve high-precision pressure control. We also develop a set of independent hardware and software systems for high-precision pressure control solutions. Taking control system versatility, scalability, reliability, and other aspects into considerations, a two-level communication employing Ethernet and CAN bus, is adopted to complete such tasks as data exchange between the IPC, the main board and the control board ,and the pressure control. Furthermore, we build a single set of ultra-low frequency modal testing suspension system and complete pressure control experiments, which achieve the desired results and thus confirm that the high-precision pressure control subsystem is reasonable and reliable.

  16. Ultra-low Temperature Curable Conductive Silver Adhesive with different Resin Matrix

    Science.gov (United States)

    Zhou, Xingli; Wang, Likun; Liao, Qingwei; Yan, Chao; Li, Xing; Qin, Lei

    2018-03-01

    The ultra-low temperature curable conductive silver adhesive with curing temperature less than 100 °C needed urgently for the surface conductive treatment of piezoelectric composite material due to the low thermal resistance of composite material and low adhesion strength of adhesive. An ultra-low temperature curable conductive adhesive with high adhesion strength was obtained for the applications of piezoelectric composite material. The microstructure, conductive properties and adhesive properties with different resin matrix were investigated. The conductive adhesive with AG-80 as the resin matrix has the shorter curing time (20min), lower curing temperature (90°C) and higher adhesion strength (7.6MPa). The resistivity of AG-80 sample has the lower value (2.13 × 10-4Ω·cm) than the 618 sample (4.44 × 10-4Ω·cm).

  17. Effect of Diluent on Ultra-low Temperature Curable Conductive Silver Adhesive

    Science.gov (United States)

    Zhou, Xingli; Wang, Likun; Liao, Qingwei; Yan, Chao; Du, Haibo; Qin, Lei

    2018-03-01

    The ultra-low temperature curable conductive silver adhesive needed urgently for the surface conductive treatment of piezoelectric composite material. The effect of diluent acetone on ultra-low temperature curable conductive silver adhesive were investigated for surface conductive treatment of piezoelectric composite material. In order to improve the operability and extend the life of the conductive adhesive, the diluent was added to dissolve and disperse conductive adhesive. With the increase of the content of diluent, the volume resistivity of conductive adhesive decreased at first and then increased, and the shear strength increased at first and then decreased. When the acetone content is 10%, the silver flaky bonded together, arranged the neatest, the smallest gap, the most closely connected, the surface can form a complete conductive network, and the volume resistivity is 2.37 × 10-4Ω · cm, the shear strength is 5.13MPa.

  18. Collisional quenching at ultralow energies: controlling efficiency with internal state selection.

    Science.gov (United States)

    Bovino, S; Bodo, E; Gianturco, F A

    2007-12-14

    Calculations have been carried out for the vibrational quenching of excited H(2) molecules which collide with Li(+) ions at ultralow energies. The dynamics has been treated exactly using the well-known quantum coupled-channel expansions over different initial vibrational levels. The overall interaction potential has been obtained from the calculations carried out earlier by our group using highly correlated ab initio methods. The results indicate that specific features of the scattering observables, e.g., the appearance of Ramsauer-Townsend minima in elastic channel cross sections and the marked increase of the cooling rates from specific initial states, can be linked to potential properties at vanishing energies (sign and size of scattering lengths) and to the presence of either virtual states or bound states. The suggestion is made such that by selecting the initial state preparation of the molecular partners, the ionic interactions would be amenable to controlling quenching efficiency at ultralow energies.

  19. Security Implications for Ultra-Low Power Configurable SoC FPAA Embedded Systems

    Directory of Open Access Journals (Sweden)

    Jennifer Hasler

    2018-06-01

    Full Text Available We discuss the impact of physical computing techniques to classifying network security issues for ultra-low power networked IoT devices. Physical computing approaches enable at least a factor of 1000 improvement in computational energy efficiency empowering a new generation of local computational structures for embedded IoT devices. These techniques offer computational capability to address network security concerns. This paper begins the discussion of security opportunities for, and issues using, FPAA devices for small embedded IoT platforms. These FPAAs enable devices often utilized for low-power context aware computation. Embedded FPAA devices have both positive Security attributes, as well as potential vulnerabilities. FPAA devices can be part of the resulting secure computation, such as implementing unique functions. FPAA devices can be used investigate security of analog/mixed signal capabilities. The paper concludes with summarizing key improvements for secure ultra-low power embedded FPAA devices.

  20. CMOS circuits for electromagnetic vibration transducers interfaces for ultra-low voltage energy harvesting

    CERN Document Server

    Maurath, Dominic

    2015-01-01

    Chip-integrated power management solutions are a must for ultra-low power systems. This enables not only the optimization of innovative sensor applications. It is also essential for integration and miniaturization of energy harvesting supply strategies of portable and autonomous monitoring systems. The book particularly addresses interfaces for energy harvesting, which are the key element to connect micro transducers to energy storage elements. Main features of the book are: - A comprehensive technology and application review, basics on transducer mechanics, fundamental circuit and control design, prototyping and testing, up to sensor system supply and applications. - Novel interfacing concepts - including active rectifiers, MPPT methods for efficient tracking of DC as well as AC sources, and a fully-integrated charge pump for efficient maximum AC power tracking at sub-100µW ultra-low power levels. The chips achieve one of widest presented operational voltage range in standard CMOS technology: 0.44V to over...

  1. Ultra-low energy electrons from fast heavy-ion helium collisions: the `target Cusp`

    Energy Technology Data Exchange (ETDEWEB)

    Schmitt, W. [Freiburg Univ. (Germany)]|[Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Moshammer, R.; Kollmus, H.; Ullrich, J. [Freiburg Univ. (Germany); O`Rourke, F.S.C. [Queen`s Univ., Belfast, Northern Ireland (United Kingdom); Sarkadi, L. [Magyar Tudomanyos Akademia, Debrecen (Hungary). Atommag Kutato Intezete; Mann, R. [Gesellschaft fuer Schwerionenforschung mbH, Darmstadt (Germany); Hagmann, S. [Kansas State Univ., Manhattan, KS (United States). J.R. MacDonald Lab.; Olson, R.E. [Missouri Univ., Rolla, MO (United States). Dept. of Physics

    1998-09-01

    Doubly differential cross sections d{sup 2}{sigma}/dv {sub parallel} dv {sub perpendicular} {sub to} have been obtained by mapping the 3-dimensional velocity space of ultra-low and low-energy electrons (1.5 meV{<=} E{sub e}{<=}100 eV) emitted in singly ionizing 3.6 MeV/u Au{sup 53+} on helium collisions. A sharp ({Delta}E{sub e} {sub perpendicular} {sub to} {sup FWHM} {<=} 22 meV) asymmetric peak centered at vertical stroke anti {nu} vertical stroke =0 is observed to emerge at ultra-low energies from the strongly forward shifted low-energy electron velocity distribution. The shape of this ``target cusp``, which is very sensitive on the details of the two-center potential, is in excellent accord with theoretical CTMC and CDW-EIS predictions. (orig.)

  2. Doping enhanced barrier lowering in graphene-silicon junctions

    Science.gov (United States)

    Zhang, Xintong; Zhang, Lining; Chan, Mansun

    2016-06-01

    Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

  3. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    International Nuclear Information System (INIS)

    Kumar, A.; Voevodin, A.A.; Paul, R.; Altfeder, I.; Zemlyanov, D.; Zakharov, D.N.; Fisher, T.S.

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface

  4. Nitrogen-doped graphene by microwave plasma chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A., E-mail: kumar50@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Voevodin, A.A. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Paul, R. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Altfeder, I. [Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States); Zemlyanov, D.; Zakharov, D.N. [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Fisher, T.S., E-mail: tsfisher@purdue.edu [Birck Nanotechnolgy Center, Purdue University, West Lafayette, IN 47907 (United States); Materials and Manufacturing Directorate, Air Force Research Laboratory, WPAFB, OH 45433 (United States)

    2013-01-01

    Rapid synthesis of nitrogen-doped, few-layer graphene films on Cu foil is achieved by microwave plasma chemical vapor deposition. The films are doped during synthesis by introduction of nitrogen gas in the reactor. Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and scanning tunneling microscopy reveal crystal structure and chemical characteristics. Nitrogen concentrations up to 2 at.% are observed, and the limit is linked to the rigidity of graphene films on copper surfaces that impedes further nitrogen substitutions of carbon atoms. The entire growth process requires only a few minutes without supplemental substrate heating and offers a promising path toward large-scale synthesis of nitrogen-doped graphene films. - Highlights: ► Rapid synthesis of nitrogen doped few layer graphene on Cu foil. ► Defect density increment on 2% nitrogen doping. ► Nitrogen doped graphene is a good protection to the copper metallic surface.

  5. Doping dependence of magnetic and transport properties in single crystalline Co-doped BaFe2As2

    International Nuclear Information System (INIS)

    Nakajima, Yasuyuki; Taen, Toshihiro; Tamegai, Tsuyoshi

    2010-01-01

    We report the doping dependence of transport and magnetic properties in Co-doped BaFe 2 As 2 . With increasing Co concentration x, structural and magnetic transitions are suppressed and superconductivity emerges in the range of 0.3 c at low temperatures and low fields obtained from bulk magnetization is reasonably large and the doping dependence shows a maximum at x∼0.07 similar to T c . The values of J c at low temperatures reach about 1x10 6 A/cm 2 around the optimally doped region, which is potentially attractive for technological applications.

  6. Ultra-low magnetic damping in metallic and half-metallic systems

    Science.gov (United States)

    Shaw, Justin

    The phenomenology of magnetic damping is of critical importance to devices which seek to exploit the electronic spin degree of freedom since damping strongly affects the energy required and speed at which a device can operate. However, theory has struggled to quantitatively predict the damping, even in common ferromagnetic materials. This presents a challenge for a broad range of applications in magnonics, spintronics and spin-orbitronics that depend on the ability to precisely control the damping of a material. I will discuss our recent work to precisely measure the intrinsic damping in several metallic and half-metallic material systems and compare experiment with several theoretical models. This investigation uncovered a metallic material composed of Co and Fe that exhibit ultra-low values of damping that approach values found in thin film YIG. Such ultra-low damping is unexpected in a metal since magnon-electron scattering dominates the damping in conductors. However, this system possesses a distinctive feature in the bandstructure that minimizes the density of states at the Fermi energy n(EF). These findings provide the theoretical framework by which such ultra-low damping can be achieved in metallic ferromagnets and may enable a new class of experiments where ultra-low damping can be combined with a charge current. Half-metallic Heusler compounds by definition have a bandgap in one of the spin channels at the Fermi energy. This feature can also lead to exceptionally low values of the damping parameter. Our results show a strong correlation of the damping with the order parameter in Co2MnGe. Finally, I will provide an overview of the recent advances in achieving low damping in thin film Heusler compounds.

  7. Ultra-low thermal expansion realized in giant negative thermal expansion materials through self-compensation

    OpenAIRE

    Fei-Ran Shen; Hao Kuang; Feng-Xia Hu; Hui Wu; Qing-Zhen Huang; Fei-Xiang Liang; Kai-Ming Qiao; Jia Li; Jing Wang; Yao Liu; Lei Zhang; Min He; Ying Zhang; Wen-Liang Zuo; Ji-Rong Sun

    2017-01-01

    Materials with zero thermal expansion (ZTE) or precisely tailored thermal expansion are in urgent demand of modern industries. However, the overwhelming majority of materials show positive thermal expansion. To develop ZTE or negative thermal expansion (NTE) materials as compensators has become an important challenge. Here, we present the evidence for the realization of ultra-low thermal expansion in Mn–Co–Ge–In particles. The bulk with the Ni2In-type hexagonal structure undergoes giant NTE o...

  8. High-performance silicon nanotube tunneling FET for ultralow-power logic applications

    KAUST Repository

    Fahad, Hossain M.; Hussain, Muhammad Mustafa

    2013-01-01

    To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET's effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

  9. Optimization Design and Performance Analysis of a Pit Turbine with Ultralow Head

    Directory of Open Access Journals (Sweden)

    Chunxia Yang

    2014-04-01

    Full Text Available A developed pit turbine with ultralow head was optimization designed under the design head of about 2 meters to achieve the goal of improving the turbine unit's efficiency. At the same time, the turbine's synthetic characteristic curve was drawn to predict the turbine's overall performance. Navier-Stokes equations and SIMPLEC algorithm were used for pit turbine's whole flow passage numerical simulation of the 3D, steady, incompressible, turbulent flow field. Through the CFD numerical simulation, the influence to ultralow head turbine's performance was analyzed by runner blade's different setting angles and guide vane's different axes. Considering the hydraulic performance of various methods, the best blade's setting angle and guide vane's axis were chosen. The results show that, the turbine unit has the best performance on efficiency, hydraulic loss, and so forth, with the blade's setting angle 23° and the angle 72° between the guide vane and the centerline of unit, meeting the power station's design requirements. The development pit turbine with ultralow head shows the highest efficiency of 87.6% under condition of design head of 2.1 meters and design discharge of 10 m3/s. The energy performance of pit turbine with ultralow head was researched by the model test of GD-WS-35 turbine. The model turbine's characteristic curve was drawn. The model turbine's high efficiency area is wide and the efficiency changes mildly. The numerical simulation results are essentially consistent with the model test results, while the former one is slightly higher than the latter one. The error range is ±3%.

  10. High-performance silicon nanotube tunneling FET for ultralow-power logic applications

    KAUST Repository

    Fahad, Hossain M.

    2013-03-01

    To increase typically low output drive currents from tunnel field-effect transistors (FETs), we show a silicon vertical nanotube (NT) architecture-based FET\\'s effectiveness. Using core (inner) and shell (outer) gate stacks, the silicon NT tunneling FET shows a sub-60 mV/dec subthreshold slope, ultralow off -state leakage current, higher drive current compared with gate-all-around nanowire silicon tunnel FETs. © 1963-2012 IEEE.

  11. Porous Materials with Ultralow Optical Constants for Integrated Optical Device Applications

    Science.gov (United States)

    Chen, Hsuen-Li; Hsieh, Chung-I; Cheng, Chao-Chia; Chang, Chia-Pin; Hsu, Wen-Hau; Wang, Way-Seen; Liu, Po-Tsun

    2005-07-01

    Ultralow dielectric constant (polymers. We demonstrate two structures, ridge waveguides and large-angle Y-branch power splitters, composed of PPSZ and SU8 films to illustrate the use of low dielectric constant (K) cladding materials. The simulation results indicate that the PPSZ films provide better confinement of light. Experimentally, a large-angle Y-branch power splitter with PPSZ cladding can be used to guide waves with the large branching angle of 33.58°.

  12. Component Development to Accelerate Commercial Implementation of Ultra-Low Emissions Catalytic Combustion

    Energy Technology Data Exchange (ETDEWEB)

    McCarty, Jon; Berry, Brian; Lundberg, Kare; Anson, Orris

    2003-03-31

    This final report describes a 2000-2003 program for the development of components and processes to enhance the commercialization of ultra-low emissions catalytic combustion in industrial gas turbines. The range of project tasks includes: development of more durable, lower-cost catalysts and catalytic combustor components; development and design of a catalytic pre-burner and a catalytic pilot burner for gas turbines, and on-site fuel conversion processing for utilization of liquid fuel.

  13. Ultralow Level Mercury Treatment Using Chemical Reduction and Air Stripping

    International Nuclear Information System (INIS)

    Looney, B.B.

    2001-01-01

    The overall objective of this work is to develop a reasonable and cost-effective approach to meet the emerging mercury standards, especially for high volume outfalls with concentrations below the drinking water standard

  14. Ultralow-k nanoporous organosilicate dielectric films imprinted with dendritic spheres.

    Science.gov (United States)

    Lee, Byeongdu; Park, Young-Hee; Hwang, Yong-Taek; Oh, Weontae; Yoon, Jinhwan; Ree, Moonhor

    2005-02-01

    Integrated circuits that have improved functionality and speed in a smaller package and that consume less power are desired by the microelectronics industry as well as by end users, to increase device performance and reduce costs. The fabrication of high-performance integrated circuits requires the availability of materials with low or ultralow dielectric constant (low-k: k noise in interconnect conductors, but also minimize power dissipation by reducing the capacitance between the interconnects. Here we describe the preparation of low- and ultralow-k nanoporous organosilicate dielectrics from blends of polymethylsilsesquioxane (PMSSQ) precursor with globular ethyl acrylate-terminated polypropylenimine dendrimers, which act as porogens. These dendrimers are found to mix well with the PMSSQ precursor and after their sacrificial thermal decompositions result in closed, spherical pores of <2.0 nm radius with a very narrow distribution even at high loading. This pore size and distribution are the smallest and the narrowest respectively ever achieved in porous spin-on dielectrics. The method therefore successfully delivers low- and ultralow-k PMSSQ dielectric films that should prove very useful in advanced integrated circuits.

  15. Ultralow oxygen treatment for postharvest control of Nasonovia ribisnigri (Homoptera: Aphididae) on iceberg lettuce.

    Science.gov (United States)

    Liu, Yong-Biao

    2005-12-01

    The aphid Nasonovia ribisnigri (Mosley) is a common pest of lettuce in the United States. It hinders export of U.S. lettuce to the overseas market such as Japan where it is a quarantined pest. Ultralow oxygen treatments were studied for control of the insect on iceberg lettuce. Small-scale ultralow oxygen treatments in plastic jars were conducted at 1, 5, and 10 degrees C for different durations to determine effective treatment against nymphs and alates of N. ribisnigri. At oxygen levels of 0.015-0.025%, N. ribisnigri can be controlled in 3 d at 1 degrees C, 2 d at 5 degrees C, and 1 d at 10 degrees C. Large-scale ultralow oxygen treatments were conducted in bulk container treatment chambers with commercial iceberg lettuce heads for 2 d at 6 degrees C with oxygen levels of 0.015 and 0.025% and for 3 d at 3 degrees C with oxygen level of 0.015%. All treatments achieved complete control of N. ribisnigri. No negative impact on lettuce quality was detected after 2 wk of posttreatment storage. Therefore, the selected treatments have potential to be commercially developed for postharvest control of N. ribisnigri on iceberg lettuce.

  16. Radiation effect of doping and bias conditions on NPN bipolar junction transistors

    International Nuclear Information System (INIS)

    Xi Shanbin; Wang Yiyuan; Xu Fayue; Zhou Dong; Li Ming; Wang Fei; Wang Zhikuan; Yang Yonghui; Lu Wu

    2011-01-01

    In this paper,we investigate 60 Co γ-ray irradiation effects and annealing behaviors of NPN bipolar junction transistors of the same manufacturing technology but different doping concentrations. The transistors of different doping concentrations differ in responses of the radiation effect. More degradation was observed with the transistors of low concentration-doped NPN transistors than the high concentration-doped NPN transistors. The results also demonstrate that reverse-biased transistors are more sensitive to radiation than the forward-biased ones. Mechanisms of the radiation responses are analyzed. (authors)

  17. Determination of ultra-low level 129I in vegetation using pyrolysis for iodine separation and accelerator mass spectrometry measurements

    DEFF Research Database (Denmark)

    Hou, Xiaolin; Wang, Yanyun

    2016-01-01

    Radioactive isotopes of iodine are the most common radiological toxins from nuclear accidents due to their high release and high enrichment in human thyroid. Among the radioactive isotopes, long-lived 129I can not only be used for the estimation of the radioactive risk of short-lived radioactive...... and ultra-low concentration in normal environmental and biological samples, it is important to efficiently separate iodine from the sample matrix and sensitively measure 129I. However, the complicated chemical properties of iodine and high organic content in biological samples make efficient separation...... of iodine very difficult using conventional acid digestion and alkaline ashing methods. By optimizing the key parameters related to the separation of iodine by pyrolysis using a tube furnace, including carbonization temperature, heating protocol, combustion assisting gas, iodine volatilization process...

  18. Determination of Ultralow Level 129I/127I in Natural Samples by Separation of Microgram Carrier Free Iodine and Accelerator Mass Spectrometry Detection

    DEFF Research Database (Denmark)

    Hou, Xiaolin; Zhou, Weijian; Chen, Ning

    2010-01-01

    of 129I/127I, and a detection limit of this method for 129I is calculated to be 105 atoms. This will allow us to accurately determine 129I in prenuclear geological samples of low iodine concentration with 129I/127I of 10−12, such as loess, soil, coral, rock, sediment, and groundwater. Some samples......Separation of carrier free iodine from low iodine level samples and accurate measurement of ultralow level 129I in micrograms of iodine target are essential but a bottleneck in geological dating of terrestrial system and tracer research using naturally produced 129I. In this work, we present...... a carrier free method using coprecipitation of AgI with AgCl for preparing micrograms of iodine target, associated with combustion using a tube furnace for separating iodine from solid samples and anion exchange chromatography for preconcentrating iodine from a large volume of water. An accelerator mass...

  19. Early Rupture of an Ultralow Duodenal Stump after Extended Surgery for Gastric Cancer with Duodenal Invasion Managed by Tube Duodenostomy and Cholangiostomy

    Directory of Open Access Journals (Sweden)

    Konstantinos Blouhos

    2013-01-01

    Full Text Available When dealing with gastric cancer with duodenal invasion, gastrectomy with distal resection of the duodenum is necessary to achieve negative distal margin. However, rupture of an ultralow duodenal stump necessitates advanced surgical skills and close postoperative observation. The present study reports a case of an early duodenal stump rupture after subtotal gastrectomy with resection of the whole first part of the duodenum, complete omentectomy, bursectomy, and D2+ lymphadenectomy performed for a pT3pN2pM1 (+ number 13 lymph nodes adenocarcinoma of the antrum. Duodenal stump rupture was managed successfully by end tube duodenostomy, without omental patching, and tube cholangiostomy. Close assessment of clinical, physical, and radiological signs, output volume, and enzyme concentration of the tube duodenostomy, T-tube, and closed suction drain, which was placed near the tube duodenostomy site to drain the leak around the catheter, dictated postoperative management of the external duodenal fistula.

  20. Doping control in sport

    DEFF Research Database (Denmark)

    Overbye, Marie Birch

    2016-01-01

    Doping testing is a key component enforced by anti-doping authorities to detect and deter doping in sport. Policy is developed to protect athletes' right to participate in doping-free sport; and testing is a key tool to secure this right. Accordingly, athletes' responses to anti-doping efforts...... are important. This article explores how the International Standards for Testing, which face different interpretations and challenges when policy is implemented, are perceived by elite athletes. Particularly, this article aims to investigate how elite athletes perceive the functioning of the testing system (i.......e., the efforts of stakeholders involved in testing) in their own sport both nationally and worldwide. Moreover, it seeks to identify whether specific factors such as previous experience of testing and perceived proximity of doping have an impact on athletes' perceptions of the testing system. The study comprises...

  1. The Anti-Doping Movement.

    Science.gov (United States)

    Willick, Stuart E; Miller, Geoffrey D; Eichner, Daniel

    2016-03-01

    Historical reports of doping in sports date as far back as the ancient Greek Olympic Games. The anti-doping community considers doping in sports to be cheating and a violation of the spirit of sport. During the past century, there has been an increasing awareness of the extent of doping in sports and the health risks of doping. In response, the anti-doping movement has endeavored to educate athletes and others about the health risks of doping and promote a level playing field. Doping control is now undertaken in most countries around the world and at most elite sports competitions. As athletes have found new ways to dope, however, the anti-doping community has endeavored to strengthen its educational and deterrence efforts. It is incumbent upon sports medicine professionals to understand the health risks of doping and all doping control processes. Copyright © 2016 American Academy of Physical Medicine and Rehabilitation. Published by Elsevier Inc. All rights reserved.

  2. Comparison of low- and ultralow-dose computed tomography protocols for quantitative lung and airway assessment.

    Science.gov (United States)

    Hammond, Emily; Sloan, Chelsea; Newell, John D; Sieren, Jered P; Saylor, Melissa; Vidal, Craig; Hogue, Shayna; De Stefano, Frank; Sieren, Alexa; Hoffman, Eric A; Sieren, Jessica C

    2017-09-01

    Quantitative computed tomography (CT) measures are increasingly being developed and used to characterize lung disease. With recent advances in CT technologies, we sought to evaluate the quantitative accuracy of lung imaging at low- and ultralow-radiation doses with the use of iterative reconstruction (IR), tube current modulation (TCM), and spectral shaping. We investigated the effect of five independent CT protocols reconstructed with IR on quantitative airway measures and global lung measures using an in vivo large animal model as a human subject surrogate. A control protocol was chosen (NIH-SPIROMICS + TCM) and five independent protocols investigating TCM, low- and ultralow-radiation dose, and spectral shaping. For all scans, quantitative global parenchymal measurements (mean, median and standard deviation of the parenchymal HU, along with measures of emphysema) and global airway measurements (number of segmented airways and pi10) were generated. In addition, selected individual airway measurements (minor and major inner diameter, wall thickness, inner and outer area, inner and outer perimeter, wall area fraction, and inner equivalent circle diameter) were evaluated. Comparisons were made between control and target protocols using difference and repeatability measures. Estimated CT volume dose index (CTDIvol) across all protocols ranged from 7.32 mGy to 0.32 mGy. Low- and ultralow-dose protocols required more manual editing and resolved fewer airway branches; yet, comparable pi10 whole lung measures were observed across all protocols. Similar trends in acquired parenchymal and airway measurements were observed across all protocols, with increased measurement differences using the ultralow-dose protocols. However, for small airways (1.9 ± 0.2 mm) and medium airways (5.7 ± 0.4 mm), the measurement differences across all protocols were comparable to the control protocol repeatability across breath holds. Diameters, wall thickness, wall area fraction

  3. Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

    KAUST Repository

    Maller, Robert

    2016-05-24

    The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.

  4. Probing the doping mechanisms and electrical properties of Al, Ga and In doped ZnO prepared by spray pyrolysis

    KAUST Repository

    Maller, Robert; Porte, Yoann; Alshareef, Husam N.; McLachlan, Martyn

    2016-01-01

    The measured structural, optical and electrical properties of Al, Ga and In doped ZnO films deposited using spray pyrolysis are reported over the doping range 0.1 - 3 atomic percent (at. %). Over the entire doping series highly transparent, polycrystalline thin films are prepared. Using the AC Hall effect we probe the electronic properties of our doped films separating the impact of doping on the measured charge carrier concentrations and Hall mobility, with an emphasis on the low doping, < 1 at. %, range. In this doping range highly resistive films are formed and we highlight AC Hall as a reliable and highly reproducible technique for analysing the doping mechanism. The implementation of a simple, post-deposition heat treatment of our AZO films creates typical films with charge carrier concentrations exceeding > 1019 cm-3 and electron mobilities over 10 cm2/Vs. We describe in detail the nature of the defect chemistry and the role of intrinsic defects, particularly traps, and show that despite significant variations in dopant species and grain boundary concentrations that the defect chemistry dominates the electrical characteristics.

  5. Doping Mechanisms in Wide Bandgap Group III Nitrides

    National Research Council Canada - National Science Library

    Wessels, Bruce

    2002-01-01

    .... The main objective was to determine the factors, which limit p-type conductivity in GaN and its alloys and to develop doping techniques to increase the hole concentrations to greater than 10(exp 19)/cu cm...

  6. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    , or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates

  7. Effect of heavy Ag doping on the physical properties of ZnO

    Science.gov (United States)

    Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Xu, Zhenchao

    2018-04-01

    The band structure, density of state and absorption spectrum of Zn1‑xAgxO (x = 0.02778, 0.04167) were calculated. Results indicated that a higher doping content of Ag led to a higher total energy, lower stability, higher formation energy, narrower bandgap, more significant red shift of the absorption spectrum, higher relative concentration of free hole, smaller hole effective mass, lower mobility and better conductivity. Furthermore, four types of model with the same doping content of double Ag-doped Zn1‑xAgxO (x = 0.125) but different manners of doping were established. Two types of models with different doping contents of double Ag-doped Zn1‑xAgxO (x = 0.0626, 0.0833) but the same manner of doping, were also established. Under the same doping content and different ordering occupations in Ag double doping, the doped system almost caused magnetic quenching upon the nearest neighbor -Ag-O-Ag- bonding at the direction partial to the a- or b-axis. Upon the next-nearest neighbor of -Ag-O-Zn-O-Ag- bonding at the direction partial to the c-axis, the total magnetic moment of the doped system increased, and the doped system reached a Curie temperature above the room-temperature. All these results indicated that the magnetic moments of Ag double-doped ZnO systems decreased with increased Ag doping content. Within the range of the mole number of the doping content of 0.02778-0.04167, a greater Ag doping content led to a narrower bandgap of the doped system and a more significant red shift in the absorption spectrum. The absorption spectrum of the doped ZnO system with interstitial Ag also shows a red shift.

  8. Doped silicene: Evidence of a wide stability range

    KAUST Repository

    Cheng, Yingchun

    2011-06-17

    The effects of doping on the lattice structure, electronic structure, phonon spectrum, and electron-phonon coupling of low-buckling silicene are studied by first-principles calculations. Although the lattice is found to be very sensitive to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced by doping. This implies that the electron-phonon coupling cannot be neglected in field-effect transistor applications. Copyright © 2011 EPLA.

  9. Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application.

    Science.gov (United States)

    Kulanthaivel, Senthilguru; Roy, Bibhas; Agarwal, Tarun; Giri, Supratim; Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S; Maiti, Tapas K; Banerjee, Indranil

    2016-01-01

    The present study delineates the synthesis and characterization of cobalt doped proangiogenic-osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co(2+)) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP-OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic-osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. Copyright © 2015 Elsevier B.V. All rights reserved.

  10. Cobalt doped proangiogenic hydroxyapatite for bone tissue engineering application

    Energy Technology Data Exchange (ETDEWEB)

    Kulanthaivel, Senthilguru [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Roy, Bibhas [Department of Biotechnology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Agarwal, Tarun [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Giri, Supratim [Department of Chemistry, National Institute of Technology, Rourkela, Odisha 769008 (India); Pramanik, Krishna; Pal, Kunal; Ray, Sirsendu S. [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India); Maiti, Tapas K. [Department of Biotechnology, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal 721302 (India); Banerjee, Indranil, E-mail: indraniliit@gmail.com [Department of Biotechnology and Medical Engineering, National Institute of Technology, Rourkela, Odisha 769008 (India)

    2016-01-01

    ABSTRACT: The present study delineates the synthesis and characterization of cobalt doped proangiogenic–osteogenic hydroxyapatite. Hydroxyapatite samples, doped with varying concentrations of bivalent cobalt (Co{sup 2+}) were prepared by the ammoniacal precipitation method and the extent of doping was measured by ICP–OES. The crystalline structure of the doped hydroxyapatite samples was confirmed by XRD and FTIR studies. Analysis pertaining to the effect of doped hydroxyapatite on cell cycle progression and proliferation of MG-63 cells revealed that the doping of cobalt supported the cell viability and proliferation up to a threshold limit. Furthermore, such level of doping also induced differentiation of the bone cells, which was evident from the higher expression of differentiation markers (Runx2 and Osterix) and better nodule formation (SEM study). Western blot analysis in conjugation with ELISA study confirmed that the doped HAp samples significantly increased the expression of HIF-1α and VEGF in MG-63 cells. The analysis described here confirms the proangiogenic–osteogenic properties of the cobalt doped hydroxyapatite and indicates its potential application in bone tissue engineering. - Highlights: • Cobalt (Co{sup +2}) doped hydroxyapatite (Co-HAp) can be prepared by the wet chemical method. • The concentration of Co{sup +2} influences the physico-chemical properties of HAp. • Co-HAp was found to be biocompatible and osteogenic. • Co-HAp enhanced cellular VEGF secretion through HIF-1α stabilization. • The optimum biological performance of Co-HAp was achieved for 0.33% (w/w) Co{sup +2} doping.

  11. Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

    International Nuclear Information System (INIS)

    Li, H.L.; Lin, H.T.; Wu, Y.H.; Liu, T.; Zhao, Z.L.; Han, G.C.; Chong, T.C.

    2006-01-01

    We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature

  12. To dope or not to dope

    DEFF Research Database (Denmark)

    Overbye, Marie Birch; Knudsen, Mette Lykke; Pfister, Gertrud Ursula

    2013-01-01

    tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43%) represe......tAim: This study aims to examine the circumstances which athletes say affect their (hypothetical) consid-erations of whether to dope or not and explore the differences between athletes of different gender, ageand sport type.Methods: 645 elite athletes (mean age: 22.12; response rate: 43......%) representing 40 sports completed aweb-based questionnaire. Participants were asked to imagine themselves in a situation in which theyhad to decide whether to dope or not to dope and then evaluate how different circumstances would affecttheir decisions.Results: Multiple circumstances had an effect on athletes......’ hypothetical decisions. The most effective deter-rents were related to legal and social sanctions, side-effects and moral considerations. Female athletesand younger athletes evaluated more reasons as deterrents than older, male athletes. When confrontedwith incentives to dope, the type of sport was often...

  13. Ferromagnetic Behaviors in Fe-Doped NiO Nanofibers Synthesized by Electrospinning Method

    Directory of Open Access Journals (Sweden)

    Yi-Dong Luo

    2013-01-01

    Full Text Available Ni1−xFexO nanofibers with different Fe doping concentration have been synthesized by electrospinning method. An analysis of the phase composition and microstructure shows that Fe doping has no influence on the crystal structure and morphology of NiO nanofibers, which reveals that the doped Fe ions have been incorporated into the NiO host lattice. Pure NiO without Fe doping is antiferromagnetic, yet all the Fe-doped NiO nanofiber samples show obvious room-temperature ferromagnetic properties. The saturation magnetization of the nanofibers can be enhanced with increasing Fe doping concentration, which can be ascribed to the double exchange mechanism through the doped Fe ions and free charge carriers. In addition, it was found that the diameter of nanofibers has significant impact on the ferromagnetic properties, which was discussed in detail.

  14. Doping profile measurement on textured silicon surface

    Science.gov (United States)

    Essa, Zahi; Taleb, Nadjib; Sermage, Bernard; Broussillou, Cédric; Bazer-Bachi, Barbara; Quillec, Maurice

    2018-04-01

    In crystalline silicon solar cells, the front surface is textured in order to lower the reflection of the incident light and increase the efficiency of the cell. This texturing whose dimensions are a few micrometers wide and high, often makes it difficult to determine the doping profile measurement. We have measured by secondary ion mass spectrometry (SIMS) and electrochemical capacitance voltage profiling the doping profile of implanted phosphorus in alkaline textured and in polished monocrystalline silicon wafers. The paper shows that SIMS gives accurate results provided the primary ion impact angle is small enough. Moreover, the comparison between these two techniques gives an estimation of the concentration of electrically inactive phosphorus atoms.

  15. Doped graphene supercapacitors

    Science.gov (United States)

    Ashok Kumar, Nanjundan; Baek, Jong-Beom

    2015-12-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed.

  16. Doped graphene supercapacitors

    International Nuclear Information System (INIS)

    Kumar, Nanjundan Ashok; Baek, Jong-Beom

    2015-01-01

    Heteroatom-doped graphitic frameworks have received great attention in energy research, since doping endows graphitic structures with a wide spectrum of properties, especially critical for electrochemical supercapacitors, which tend to complement or compete with the current lithium-ion battery technology/devices. This article reviews the latest developments in the chemical modification/doping strategies of graphene and highlights the versatility of such heteroatom-doped graphitic structures. Their role as supercapacitor electrodes is discussed in detail. This review is specifically focused on the concept of material synthesis, techniques for electrode fabrication and metrics of performance, predominantly covering the last four years. Challenges and insights into the future research and perspectives on the development of novel electrode architectures for electrochemical supercapacitors based on doped graphene are also discussed. (topical review)

  17. Crystal growth and doping

    International Nuclear Information System (INIS)

    Paorici, C.

    1980-01-01

    Section 1 contains a self-consistent review of the basic growth features. After a short introduction concerning the driving force acting in a crystallization process, three main topics are broadly discussed: (i) interface kinetics; (ii) transport kinetics, and (iii) growth stability conditions. On point (i), after definition of the nature of interface, using Temkin's model, the growth mechanisms predicted by Burton, Cabrera and Frank (BCF) and bidimensional nucleation theories are fully developed. On points (ii) and (iii), the differential equations of the constitutional (concentration) and thermal fields are presented and discussed in terms of relevant approximations, suitable boundary conditions and limit values expected in order to have growth stability. Section 2 reports various experimental procedures for growing bulk crystals from the melt, from solutions and from the vapour phase. The basic concepts of Section 1 are amply employed for a critical discussion of possibilities, advantages and drawbacks of the methods described. Along the same lines, in Section 3 the principal epitaxial deposition procedures are highlighted. Section 4 contains a brief account of doping and of stoichiometry-defect control procedures. There is a long, carefully chosen list of bibliographical references. (author)

  18. Superconductivity in doped fullerenes

    International Nuclear Information System (INIS)

    Hebard, A.F.

    1992-01-01

    While there is not complete agreement on the microscopic mechanism of superconductivity in alkali-metal-doped C 60 , further research may well lead to the production of analogous materials that lose resistance at even higher temperatures. Carbon 60 is a fascinating and arrestingly beautiful molecule. With 12 pentagonal and 20 hexagonal faces symmetrically arrayed in a soccer-ball-like structure that belongs to the icosahedral point group, I h , its high symmetry alone invites special attention. The publication in September 1990 of a simple technique for manufacturing and concentrating macroscopic amounts of this new form of carbon announced to the scientific community that enabling technology had arrived. Macroscopic amounts of C 60 (and the higher fullerenes, such as C 70 and C 84 ) can now be made with an apparatus as simple as an arc furnace powered with an arc welding supply. Accordingly, chemists, physicists and materials scientists have joined forces in an explosion of effort to explore the properties of this unusual molecular building block. 23 refs., 6 figs

  19. Superconductivity in doped fullerenes

    International Nuclear Information System (INIS)

    Herbard, A.F.

    1996-01-01

    While there is not complete agreement on the microscopic mechanism of superconductivity in alkali-metal-doped C sup 0, further research may well lead to the production of analogous materials that lose resistance at even higher temperatures. Carbon 60 is a fascinating and arrestingly beautiful molecule. With 12 pentagonal and 20 hexagonal faces symmetrically arrayed in a soccer-ball-like structure that belongs to the icosahedral point group, I sub h, its high symmetry alone invites special attention. The publication in september 1990 of a simple technique for manufacturing and concentrating macroscopic amounts of this new form of carbon announced to the scientific community that enabling technology had arrived. Macroscopic amounts of C sub 6 sub 0 (and the higher fullerenes, such as C sub 7 sub 0 and C sub 8 sub 4) can now be made with an apparatus as simple as an arc furnace powered with an arc welding supply. Accordingly, chemists, physicists and materials scientists have joined forces in an explosion of effort to explore the properties of this unusual molecular building block. (author). 23 refs., 6 figs

  20. Health-enhancing doping controls

    DEFF Research Database (Denmark)

    Christiansen, Ask Vest

    2010-01-01

    Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/......Editorial published at International Network of Humanistic Doping Research (INHDR) website: http://www.doping.au.dk/en/online-resources/editorials/...

  1. The feasibility of tunable p-type Mg doping in a GaN monolayer nanosheet

    International Nuclear Information System (INIS)

    Xia, Congxin; Peng, Yuting; Wei, Shuyi; Jia, Yu

    2013-01-01

    Based on density functional theory, the electronic structures, formation energy and transition energy level of a p-type Mg-doped GaN nanosheet are investigated. Numerical results show that the transition energy level decreases monotonously with increasing Mg doping concentration in Mg-doped GaN nanosheet systems, which is lower than that of the Mg-doped bulk GaN case. Moreover, the formation energy calculations indicate that Mg-doped GaN nanosheet structures can be realized under N-rich experimental growth conditions

  2. Analytical recursive method to ascertain multisite entanglement in doped quantum spin ladders

    Science.gov (United States)

    Roy, Sudipto Singha; Dhar, Himadri Shekhar; Rakshit, Debraj; SenDe, Aditi; Sen, Ujjwal

    2017-08-01

    We formulate an analytical recursive method to generate the wave function of doped short-range resonating valence bond (RVB) states as a tool to efficiently estimate multisite entanglement as well as other physical quantities in doped quantum spin ladders. We prove that doped RVB ladder states are always genuine multipartite entangled. Importantly, our results show that within specific doping concentration and model parameter regimes, the doped RVB state essentially characterizes the trends of genuine multiparty entanglement in the exact ground states of the Hubbard model with large on-site interactions, in the limit that yields the t -J Hamiltonian.

  3. Spray deposited gallium doped tin oxide thinfilm for acetone sensor application

    Science.gov (United States)

    Preethi, M. S.; Bharath, S. P.; Bangera, Kasturi V.

    2018-04-01

    Undoped and gallium doped (1 at.%, 2 at.% and 3 at.%) tin oxide thin films were prepared using spray pyrolysis technique by optimising the deposition conditions such as precursor concentration, substrate temperature and spraying rate. X-ray diffraction analysis revealed formation of tetragonally structured polycrystalline films. The SEM micrographs of Ga doped films showed microstructures. The electrical resistivity of the doped films was found to be more than that of the undoped films. The Ga-doped tin oxide thin films were characterised for gas sensors. 1 at.% Ga doped thin films were found to be better acetone gas sensor, showed 68% sensitivity at 350°C temperature.

  4. Ultra-low background and environmental measurements at Laboratorio Subterráneo de Canfranc (LSC).

    Science.gov (United States)

    Bandac, I; Borjabad, S; Ianni, A; Nuñez-Lagos, R; Pérez, C; Rodríguez, S; Villar, J A

    2017-08-01

    To support the construction of experiments at the Laboratorio Subterráneo de Canfranc (LSC) in Spain, an Ultra-Low Background Service (ULBS) and a Copper Electroforming Service (CES) were created. The measurement technique employed at the ULBS is gamma spectroscopy with high purity germanium (HPGe) detectors. A new anti-radon system is being implemented. The main goal of CES is to obtain high-purity copper pieces. A new electroforming set-up inside LSC underground clean room is planned. Radon and environmental measurements at the LSC are presented. The ULBS and CES are reviewed. Copyright © 2017 Elsevier Ltd. All rights reserved.

  5. Ultra-low field nuclear magnetic resonance and magnetic resonance imaging to discriminate and identify materials

    Science.gov (United States)

    Matlashov, Andrei Nikolaevich; Urbaitis, Algis V.; Savukov, Igor Mykhaylovich; Espy, Michelle A.; Volegov, Petr Lvovich; Kraus, Jr., Robert Henry

    2013-03-05

    Method comprising obtaining an NMR measurement from a sample wherein an ultra-low field NMR system probes the sample and produces the NMR measurement and wherein a sampling temperature, prepolarizing field, and measurement field are known; detecting the NMR measurement by means of inductive coils; analyzing the NMR measurement to obtain at least one measurement feature wherein the measurement feature comprises T1, T2, T1.rho., or the frequency dependence thereof; and, searching for the at least one measurement feature within a database comprising NMR reference data for at least one material to determine if the sample comprises a material of interest.

  6. The MAJORANA experiment: an ultra-low background search for neutrinoless double-beta decay

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, D.; Aguayo Navarrete, Estanislao; Avignone, Frank T.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, Steven R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor; Giovanetti, G. K.; Green, Matthew P.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, M. A.; Johnson, R. A.; Keeter, K.; Keller, C.; Kidd, Mary; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leon, Jonathan D.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, W.; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C.

    2012-12-01

    The observation of neutrinoless double-beta decay would resolve the Majorana nature of the neutrino and could provide information on the absolute scale of the neutrino mass. The initial phase of the Majorana Experiment, known as the Demonstrator, will house 40 kg of Ge in an ultra-low background shielded environment at the 4850' level of the Sanford Underground Laboratory in Lead, SD. The objective of the Demonstrator is to validate whether a future 1-tonne experiment can achieve a background goal of one count per tonne-year in a narrow region of interest around the 76Ge neutrinoless double-beta decay peak.

  7. Design Margin Elimination Through Robust Timing Error Detection at Ultra-Low Voltage

    OpenAIRE

    Reyserhove, Hans; Dehaene, Wim

    2017-01-01

    This paper discusses a timing error masking-aware ARM Cortex M0 microcontroller system. Through in-path timing error detection, operation at the point-of-first-failure is possi- ble without corrupting the pipeline state, effectively eliminat- ing traditional timing margins. Error events are flagged and gathered to allow dynamic voltage scaling. The error-aware microcontroller was implemented in a 40nm CMOS process and realizes ultra-low voltage operation down to 0.29V at 5MHz consuming 12.90p...

  8. Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain

    Science.gov (United States)

    Lee, Sungsik; Nathan, Arokia

    2016-10-01

    The quest for low power becomes highly compelling in newly emerging application areas related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier indium-gallium-zinc-oxide thin-film transistor operating in the deep subthreshold regime (i.e., near the OFF state) at low supply voltages (400) that was both bias and geometry independent. The transistor reported here is useful for sensor interface circuits in wearable devices where high current sensitivity and ultralow power are vital for battery-less operation.

  9. Examination of cryogenic filters for multistage RF filtering in ultralow temperature experiments

    Science.gov (United States)

    Zavyalov, V. V.; Chernyaev, S. A.; Shein, K. V.; Shukaleva, A. G.; Arutyunov, K. Yu

    2018-03-01

    Cryo-filters are essential while studying electronic properties of nanoscale structures at very low temperatures. In this report we present the simple measuring methodology and experimental impedance characteristics of customized lumped filters cooled down to 4.2K in the 10 Hz-500 MHz frequency range. In particular, we tested the home-made permalloy-core RL filters, the MurataTMChip Ferrite Bead filter, and the ToshibaTMAmobeadsTMcores. We use the high-frequency generalization of four-terminal sensing method to account for the wiring retardation effects, which are important when working with ultralow temperature systems.

  10. Effects of pressure on doped Kondo insulators

    International Nuclear Information System (INIS)

    Lee, Chengchung; Xu, Wang

    1999-08-01

    The effects of pressure on the doped Kondo insulators (KI) are studied in the framework of the slave-boson mean-field theory under the coherent potential approximation (CPA). A unified picture for both electron-type KI and hole-type KI is presented. The density of states of the f-electrons under the applied pressures and its variation with the concentration of the Kondo holes are calculated self-consistently. The specific heat coefficient, the zero-temperature magnetic susceptibility as well as the low temperature electric resistivity of the doped KI under various pressures are obtained. The two contrasting pressure-dependent effects observed in the doped KI systems can be naturally explained within a microscopic model. (author)

  11. Electric fields in nonhomogeneously doped silicon. Summary of simulations

    International Nuclear Information System (INIS)

    Kotov, I.V.; Humanic, T.J.; Nouais, D.; Randel, J.; Rashevsky, A.

    2006-01-01

    Variations of the doping concentration inside a silicon device result in electric field distortions. These distortions, 'parasitic' fields, have been observed in Silicon Drift Detectors [D. Nouais, et al., Nucl. Instr. and Meth. A 501 (2003) 119; E. Crescio, et al., Nucl. Instr. and Meth. A 539 (2005) 250]. Electric fields inside a silicon device can be calculated for a given doping profile. In this study, the ATLAS device simulator. [Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA and s imulation/atlas.html>] was used to calculate the electric field inside an inhomogeneously doped device. Simulations were performed for 1D periodic doping profiles. Results show strong dependence of the parasitic field strength on the 'smoothness' of the doping profile

  12. Electric fields in nonhomogeneously doped silicon. Summary of simulations

    Energy Technology Data Exchange (ETDEWEB)

    Kotov, I.V. [Ohio State University, Columbus, OH 43210 (United States)]. E-mail: kotov@mps.ohio-state.edu; Humanic, T.J. [Ohio State University, Columbus, OH 43210 (United States); Nouais, D. [INFN, Sezione di Torino, I-10125 Turin (Italy); Randel, J. [Ohio State University, Columbus, OH 43210 (United States); Rashevsky, A. [INFN, Sezione di Triste, I-34127 Trieste (Italy)

    2006-11-30

    Variations of the doping concentration inside a silicon device result in electric field distortions. These distortions, 'parasitic' fields, have been observed in Silicon Drift Detectors [D. Nouais, et al., Nucl. Instr. and Meth. A 501 (2003) 119; E. Crescio, et al., Nucl. Instr. and Meth. A 539 (2005) 250]. Electric fields inside a silicon device can be calculated for a given doping profile. In this study, the ATLAS device simulator. [Silvaco International, 4701 Patrick Henry Drive, Bldg.2, Santa Clara, CA 95054, USA and ] was used to calculate the electric field inside an inhomogeneously doped device. Simulations were performed for 1D periodic doping profiles. Results show strong dependence of the parasitic field strength on the 'smoothness' of the doping profile.

  13. Gene doping in sports.

    Science.gov (United States)

    Unal, Mehmet; Ozer Unal, Durisehvar

    2004-01-01

    Gene or cell doping is defined by the World Anti-Doping Agency (WADA) as "the non-therapeutic use of genes, genetic elements and/or cells that have the capacity to enhance athletic performance". New research in genetics and genomics will be used not only to diagnose and treat disease, but also to attempt to enhance human performance. In recent years, gene therapy has shown progress and positive results that have highlighted the potential misuse of this technology and the debate of 'gene doping'. Gene therapies developed for the treatment of diseases such as anaemia (the gene for erythropoietin), muscular dystrophy (the gene for insulin-like growth factor-1) and peripheral vascular diseases (the gene for vascular endothelial growth factor) are potential doping methods. With progress in gene technology, many other genes with this potential will be discovered. For this reason, it is important to develop timely legal regulations and to research the field of gene doping in order to develop methods of detection. To protect the health of athletes and to ensure equal competitive conditions, the International Olympic Committee, WADA and International Sports Federations have accepted performance-enhancing substances and methods as being doping, and have forbidden them. Nevertheless, the desire to win causes athletes to misuse these drugs and methods. This paper reviews the current status of gene doping and candidate performance enhancement genes, and also the use of gene therapy in sports medicine and ethics of genetic enhancement. Copyright 2004 Adis Data Information BV

  14. Steam reforming of commercial ultra-low sulphur diesel

    Energy Technology Data Exchange (ETDEWEB)

    Boon, J.; Van Dijk, E.; De Munck, S.; Van den Brink, R. [Energy research Centre of The Netherlands, ECN Hydrogen and Clean Fossil Fuels, P.O. Box 1, NL1755ZG Petten (Netherlands)

    2011-03-11

    Two main routes for small-scale diesel steam reforming exist: low-temperature pre-reforming followed by well-established methane steam reforming on the one hand and direct steam reforming on the other hand. Tests with commercial catalysts and commercially obtained diesel fuels are presented for both processes. The fuels contained up to 6.5 ppmw sulphur and up to 4.5 vol.% of biomass-derived fatty acid methyl ester (FAME). Pre-reforming sulphur-free diesel at around 475C has been tested with a commercial nickel catalyst for 118 h without observing catalyst deactivation, at steam-to-carbon ratios as low as 2.6. Direct steam reforming at temperatures up to 800C has been tested with a commercial precious metal catalyst for a total of 1190 h with two catalyst batches at steam-to-carbon ratios as low as 2.5. Deactivation was neither observed with lower steam-to-carbon ratios nor for increasing sulphur concentration. The importance of good fuel evaporation and mixing for correct testing of catalysts is illustrated. Diesel containing biodiesel components resulted in poor spray quality, hence poor mixing and evaporation upstream, eventually causing decreasing catalyst performance. The feasibility of direct high temperature steam reforming of commercial low-sulphur diesel has been demonstrated.

  15. Steam reforming of commercial ultra-low sulphur diesel

    Science.gov (United States)

    Boon, Jurriaan; van Dijk, Eric; de Munck, Sander; van den Brink, Ruud

    Two main routes for small-scale diesel steam reforming exist: low-temperature pre-reforming followed by well-established methane steam reforming on the one hand and direct steam reforming on the other hand. Tests with commercial catalysts and commercially obtained diesel fuels are presented for both processes. The fuels contained up to 6.5 ppmw sulphur and up to 4.5 vol.% of biomass-derived fatty acid methyl ester (FAME). Pre-reforming sulphur-free diesel at around 475 °C has been tested with a commercial nickel catalyst for 118 h without observing catalyst deactivation, at steam-to-carbon ratios as low as 2.6. Direct steam reforming at temperatures up to 800 °C has been tested with a commercial precious metal catalyst for a total of 1190 h with two catalyst batches at steam-to-carbon ratios as low as 2.5. Deactivation was neither observed with lower steam-to-carbon ratios nor for increasing sulphur concentration. The importance of good fuel evaporation and mixing for correct testing of catalysts is illustrated. Diesel containing biodiesel components resulted in poor spray quality, hence poor mixing and evaporation upstream, eventually causing decreasing catalyst performance. The feasibility of direct high temperature steam reforming of commercial low-sulphur diesel has been demonstrated.

  16. Modulation of electronic transport properties in armchair phosphorene nanoribbons by doping and edge passivation.

    Science.gov (United States)

    Guo, Caixia; Wang, Tianxing; Xia, Congxin; Liu, Yufang

    2017-10-09

    The electronic structures and transport properties of group IV atoms (C, Si, Ge)-doped armchair phosphorene nanoribbons (APNRs) are investigated using first-principles calculations, considering different edge passivation. The results show that the C, Si, Ge dopants can induce the transition occur from semiconductor to metal in the APNRs. The negative differential resistance (NDR) behavior in the doped APNR system is robust with respect to the doping concentration and edge passivation type. However, their current peak positions and peak-to-valley ratio (PVR) values are correlated with doping concentration and edge passivation type. In particular, for the C, Si-doped APNRs, the low bias NDR behavior with the PVR (10 5 -10 8 ) can be observed when doping concentration is low in the APNRs with the F and H edge passivation. These results may play an important role for the fabrication of future low power consumption nano-electronic devices.

  17. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Effect of indium and antimony doping in SnS single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chaki, Sunil H., E-mail: sunilchaki@yahoo.co.in; Chaudhary, Mahesh D.; Deshpande, M.P.

    2015-03-15

    Highlights: • Single crystals growth of pure SnS, indium doped SnS and antimony doped SnS by direct vapour transport (DVT) technique. • Doping of In and Sb occurred in SnS single crystals by cation replacement. • The replacement mechanism ascertained by EDAX, XRD and substantiated by Raman spectra analysis. • Dopants concentration affects the optical energy bandgap. • Doping influences electrical transport properties. - Abstract: Single crystals of pure SnS, indium (In) doped SnS and antimony (Sb) doped SnS were grown by direct vapour transport (DVT) technique. Two doping concentrations of 5% and 15% each were employed for both In and Sb dopants. Thus in total five samples were studied viz., pure SnS (S1), 5% In doped SnS (S2), 15% In doped SnS (S3), 5% Sb doped SnS (S4) and 15% Sb doped SnS (S5). The grown single crystal samples were characterized by evaluating their surface microstructure, stoichiometric composition, crystal structure, Raman spectroscopy, optical and electrical transport properties using appropriate techniques. The d.c. electrical resistivity and thermoelectric power variations with temperature showed semiconducting and p-type nature of the as-grown single crystal samples. The room temperature Hall Effect measurements further substantiated the semiconducting and p-type nature of the as-grown single crystal samples. The obtained results are deliberated in detail.

  20. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    International Nuclear Information System (INIS)

    Sahin, Bünyamin; Kaya, Tolga

    2016-01-01

    Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  1. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    Energy Technology Data Exchange (ETDEWEB)

    Sahin, Bünyamin, E-mail: sahin38@gmail.com [Department of Physics, Faculty of Arts and Sciences, Mustafa Kemal University, Hatay, 31034 (Turkey); School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Kaya, Tolga [School of Engineering and Technology, Central Michigan University, Mt. Pleasant, 48859 (United States); Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, 48859 (United States)

    2016-01-30

    Graphical abstract: - Highlights: • A series of Na- and K-doped CuO were growth via SILAR method. • The hydration level monitoring activity has been tested with CuO films. • The highest sensing efficiency was obtained with 4 M% K. - Abstract: In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current–voltage (I–V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  2. High p-Type Doping, Mobility, and Photocarrier Lifetime in Arsenic-Doped CdTe Single Crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kuciauskas, Darius [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Nagaoka, Akira [Kyoto University; University of Utah; McCoy, Jedidiah [Washington State University; Scarpulla, Michael A. [University of Utah

    2018-05-08

    Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10^16 and 10^20 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10^17 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 10^17/cm3 range is observed for samples quenched at 200-300 degrees C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10^16 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10^18 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

  3. Remote Molecular Doping of Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Kirmani, Ahmad R.

    2016-10-07

    In recent years colloidal quantum dot (CQD) photovoltaics have developed rapidly because of novel device architectures and robust surface passivation schemes. Achieving controlled net doping remains an important unsolved challenge for this field. Herein we present a general molecular doping platform for CQD solids employing a library of metal–organic complexes. Low effective ionization energy and high electron affinity complexes are shown to produce n- and p-doped CQD solids. We demonstrate the obvious advantage in solar cells by p-doping the CQD absorber layer. Employing photoemission spectroscopy, we identify two doping concentration regimes: lower concentrations lead to efficient doping, while higher concentrations also cause large surface dipoles creating energy barriers to carrier flow. Utilizing the lower concentration regime, we remove midgap electrons leading to 25% enhancement in the power conversion efficiency relative to undoped cells. Given the vast number of available metal–organic complexes, this approach opens new and facile routes to tuning the properties of CQDs for various applications without necessarily resorting to new ligand chemistries.

  4. Remote Molecular Doping of Colloidal Quantum Dot Photovoltaics

    KAUST Repository

    Kirmani, Ahmad R.; Kiani, Amirreza; Said, Marcel M.; Voznyy, Oleksandr; Wehbe, Nimer; Walters, Grant; Barlow, Stephen; Sargent, Edward H.; Marder, Seth R.; Amassian, Aram

    2016-01-01

    In recent years colloidal quantum dot (CQD) photovoltaics have developed rapidly because of novel device architectures and robust surface passivation schemes. Achieving controlled net doping remains an important unsolved challenge for this field. Herein we present a general molecular doping platform for CQD solids employing a library of metal–organic complexes. Low effective ionization energy and high electron affinity complexes are shown to produce n- and p-doped CQD solids. We demonstrate the obvious advantage in solar cells by p-doping the CQD absorber layer. Employing photoemission spectroscopy, we identify two doping concentration regimes: lower concentrations lead to efficient doping, while higher concentrations also cause large surface dipoles creating energy barriers to carrier flow. Utilizing the lower concentration regime, we remove midgap electrons leading to 25% enhancement in the power conversion efficiency relative to undoped cells. Given the vast number of available metal–organic complexes, this approach opens new and facile routes to tuning the properties of CQDs for various applications without necessarily resorting to new ligand chemistries.

  5. Ultralow-Power Electronic Trapping of Nanoparticles with Sub-10 nm Gold Nanogap Electrodes.

    Science.gov (United States)

    Barik, Avijit; Chen, Xiaoshu; Oh, Sang-Hyun

    2016-10-12

    We demonstrate nanogap electrodes for rapid, parallel, and ultralow-power trapping of nanoparticles. Our device pushes the limit of dielectrophoresis by shrinking the separation between gold electrodes to sub-10 nm, thereby creating strong trapping forces at biases as low as the 100 mV ranges. Using high-throughput atomic layer lithography, we manufacture sub-10 nm gaps between 0.8 mm long gold electrodes and pattern them into individually addressable parallel electronic traps. Unlike pointlike junctions made by electron-beam lithography or larger micron-gap electrodes that are used for conventional dielectrophoresis, our sub-10 nm gold nanogap electrodes provide strong trapping forces over a mm-scale trapping zone. Importantly, our technology solves the key challenges associated with traditional dielectrophoresis experiments, such as high voltages that cause heat generation, bubble formation, and unwanted electrochemical reactions. The strongly enhanced fields around the nanogap induce particle-transport speed exceeding 10 μm/s and enable the trapping of 30 nm polystyrene nanoparticles using an ultralow bias of 200 mV. We also demonstrate rapid electronic trapping of quantum dots and nanodiamond particles on arrays of parallel traps. Our sub-10 nm gold nanogap electrodes can be combined with plasmonic sensors or nanophotonic circuitry, and their low-power electronic operation can potentially enable high-density integration on a chip as well as portable biosensing.

  6. I. Construction of an ultralow temperature laboratory. II. Thermal relaxation in superfluid helium-3

    International Nuclear Information System (INIS)

    Neuhauser, B.J.

    1986-01-01

    The first part of this thesis describes the construction of an ultralow temperature laboratory capable of reaching temperatures below 0.002 K. Continuous refrigeration to 0.012 K is provided by a cold plate/dilution refrigerator system. Single-cycle cooling to 0.002 K is accomplished by adiabatic demagnetization of cerous magnesium nitrate (CMN), a paramagnetic salt. Thermometry is done by measuring the resistance of carbon and germanium sensors, the magnetic susceptibility of lanthanum-diluted CMN, and the anisotropy of gamma radiation from a cobalt-60 nuclear orientation thermometer. Systems have been developed to allow precise control of the temperature and pressure of the liquid helium-3 sample. Measurements of thermal relaxation of liquid helium-3 in the ultralow temperature cell following sudden magnetic cooling of the CMN refrigerant are described. Analysis of the transient response of a thermal model of the cell indicates that the ratio of the time constants immediately below and above the superfluid-to-normal transition temperature provides a close estimate of the ratio of the corresponding helium-3 heat capacities, at least in the superfluid A-phase

  7. Note: Expanding the bandwidth of the ultra-low current amplifier using an artificial negative capacitor.

    Science.gov (United States)

    Xie, Kai; Liu, Yan; Li, XiaoPing; Guo, Lixin; Zhang, Hanlu

    2016-04-01

    The bandwidth and low noise characteristics are often contradictory in ultra-low current amplifier, because an inevitable parasitic capacitance is paralleled with the high value feedback resistor. In order to expand the amplifier's bandwidth, a novel approach was proposed by introducing an artificial negative capacitor to cancel the parasitic capacitance. The theory of the negative capacitance and the performance of the improved amplifier circuit with the negative capacitor are presented in this manuscript. The test was conducted by modifying an ultra-low current amplifier with a trans-impedance gain of 50 GΩ. The results show that the maximum bandwidth was expanded from 18.7 Hz to 3.3 kHz with more than 150 times of increase when the parasitic capacitance (∼0.17 pF) was cancelled. Meanwhile, the rise time decreased from 18.7 ms to 0.26 ms with no overshot. Any desired bandwidth or rise time within these ranges can be obtained by adjusting the ratio of cancellation of the parasitic and negative capacitance. This approach is especially suitable for the demand of rapid response to weak current, such as transient ion-beam detector, mass spectrometry analysis, and fast scanning microscope.

  8. A Study of Submicron Grain Boundary Precipitates in Ultralow Carbon 316LN Steels

    Science.gov (United States)

    Downey, S.; Han, K.; Kalu, P. N.; Yang, K.; Du, Z. M.

    2010-04-01

    This article reports our efforts in characterization of an ultralow carbon 316LN-type stainless steel. The carbon content in the material is one-third that in a conventional 316LN, which further inhibits the formation of grain boundary carbides and therefore sensitizations. Our primary effort is focused on characterization of submicron size precipitates in the materials with the electron backscatter diffraction (EBSD) technique complemented by Auger electron spectroscopy (AES). Thermodynamic calculations suggested that several precipitates, such as M23C6, Chi, Sigma, and Cr2N, can form in a low carbon 316LN. In the steels heat treated at 973 K (700 °C) for 100 hours, a combination of EBSD and AES conclusively identified the grain boundary precipitates (≥100 nm) as Cr2N, which has a hexagonal closed-packed crystallographic structure. Increases of the nitrogen content promote formation of large size Cr2N precipitates. Therefore, prolonged heat treatment at relatively high temperatures of ultralow carbon 316LN steels may result in a sensitization.

  9. Ultra-low thermal expansion realized in giant negative thermal expansion materials through self-compensation

    Science.gov (United States)

    Shen, Fei-Ran; Kuang, Hao; Hu, Feng-Xia; Wu, Hui; Huang, Qing-Zhen; Liang, Fei-Xiang; Qiao, Kai-Ming; Li, Jia; Wang, Jing; Liu, Yao; Zhang, Lei; He, Min; Zhang, Ying; Zuo, Wen-Liang; Sun, Ji-Rong; Shen, Bao-Gen

    2017-10-01

    Materials with zero thermal expansion (ZTE) or precisely tailored thermal expansion are in urgent demand of modern industries. However, the overwhelming majority of materials show positive thermal expansion. To develop ZTE or negative thermal expansion (NTE) materials as compensators has become an important challenge. Here, we present the evidence for the realization of ultra-low thermal expansion in Mn-Co-Ge-In particles. The bulk with the Ni2In-type hexagonal structure undergoes giant NTE owing to a martensitic magnetostructural transition. The major finding is that the thermal expansion behavior can be totally controlled by modulating the crystallinity degree and phase transition from atomic scale. Self-compensation effect leads to ultra-low thermal expansion with a linear expansion coefficient as small as +0.68 × 10-6/K over a wide temperature range around room temperature. The present study opens an avenue to reach ZTE particularly from the large class of giant NTE materials based on phase transition.

  10. Ultra-low thermal expansion realized in giant negative thermal expansion materials through self-compensation

    Directory of Open Access Journals (Sweden)

    Fei-Ran Shen

    2017-10-01

    Full Text Available Materials with zero thermal expansion (ZTE or precisely tailored thermal expansion are in urgent demand of modern industries. However, the overwhelming majority of materials show positive thermal expansion. To develop ZTE or negative thermal expansion (NTE materials as compensators has become an important challenge. Here, we present the evidence for the realization of ultra-low thermal expansion in Mn–Co–Ge–In particles. The bulk with the Ni2In-type hexagonal structure undergoes giant NTE owing to a martensitic magnetostructural transition. The major finding is that the thermal expansion behavior can be totally controlled by modulating the crystallinity degree and phase transition from atomic scale. Self-compensation effect leads to ultra-low thermal expansion with a linear expansion coefficient as small as +0.68 × 10−6/K over a wide temperature range around room temperature. The present study opens an avenue to reach ZTE particularly from the large class of giant NTE materials based on phase transition.

  11. Note: Expanding the bandwidth of the ultra-low current amplifier using an artificial negative capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Kai, E-mail: kaixie@mail.xidian.edu.cn; Liu, Yan; Li, XiaoPing [School of Aerospace Science and Technology, Xidian University, Xi’an 710071 (China); Guo, Lixin [School of Physics and Optoelectronic Engineering, Xidian University, Xi’an 710071 (China); Zhang, Hanlu [School of Communication & Information Engineering, Xi’an University of Posts & Telecommunication, Xi’an 710121 (China)

    2016-04-15

    The bandwidth and low noise characteristics are often contradictory in ultra-low current amplifier, because an inevitable parasitic capacitance is paralleled with the high value feedback resistor. In order to expand the amplifier’s bandwidth, a novel approach was proposed by introducing an artificial negative capacitor to cancel the parasitic capacitance. The theory of the negative capacitance and the performance of the improved amplifier circuit with the negative capacitor are presented in this manuscript. The test was conducted by modifying an ultra-low current amplifier with a trans-impedance gain of 50 GΩ. The results show that the maximum bandwidth was expanded from 18.7 Hz to 3.3 kHz with more than 150 times of increase when the parasitic capacitance (∼0.17 pF) was cancelled. Meanwhile, the rise time decreased from 18.7 ms to 0.26 ms with no overshot. Any desired bandwidth or rise time within these ranges can be obtained by adjusting the ratio of cancellation of the parasitic and negative capacitance. This approach is especially suitable for the demand of rapid response to weak current, such as transient ion-beam detector, mass spectrometry analysis, and fast scanning microscope.

  12. Molybdenum disulfide for ultra-low detection of free radicals: electrochemical response and molecular modeling

    Science.gov (United States)

    Gupta, Ankur; Rawal, Takat B.; Neal, Craig J.; Das, Soumen; Rahman, Talat S.; Seal, Sudipta

    2017-06-01

    Two-dimensional (2D) molybdenum disulfide (MoS2) offers attractive properties due to its band gap modulation and has led to significant research-oriented applications (i.e. DNA and protein detection, cell imaging (fluorescent label) etc.). In biology, detection of free radicals (i.e. reactive oxygen species and reactive nitrogen (NO*) species are very important for early discovery and treatment of diseases. Herein, for the first time, we demonstrate the ultra-low (pico-molar) detection of pharmaceutically relevant free radicals using MoS2 for electrochemical sensing. We present pico- to nano- molar level sensitivity in smaller MoS2 with S-deficiency as revealed by x-ray photoelectron spectroscopy. Furthermore, the detection mechanism and size-dependent sensitivity have been investigated by density functional theory (DFT) showing the change in electronic density of states of Mo atoms at edges which lead to the preferred adsorption of H2O2 on Mo edges. The DFT analysis signifies the role of size and S-deficiency in the higher catalytic activity of smaller MoS2 particles and, thus, ultra-low detection.

  13. Perineal pseudocontinent colostomy for ultra-low rectal adenocarcinoma: the muscular graft as a pseudosphincter.

    Science.gov (United States)

    Souadka, Amine; Majbar, Mohammed Anass; Amrani, Laila; Souadka, Abdelilah

    2016-10-01

    The aim of this study was to analyze objectively the role of the muscular graft in the continence using manometric study in the patients who underwent pseudocontinent perineal colostomy after abdominoperineal resection for rectal adenocarcinoma. This was a retrospective study including all the patients from January 2002 to December 2009 who underwent an abdominoperineal resection followed by perineal pseudocontinent colostomy for ultra-low rectal adenocarcinoma and agreed to perform the manometric evaluation of the muscular graft. Fifteen patients were included, six males and nine females, with a mean age of 50 years. According to Kirwan's classification, 2 (13.3%) patients had normal continence (Stage A) had 10 (66.6%) no soiling (stage B) and 3 (20%) patients had minimal soiling (Stage C). The manometric evaluation was performed after a median period of 12 months post-surgery. The mean maximal resting and squeeze pressures were respectively 41 cmH2O and 59 cmH2O and the mean colonic sensory volume was 12 ml. This study showed that the musculae graft of Pseudocontinent Perineal colostomy acted as a hypotonic sphincter that pressure can increase during the voluntary squeeze. These data may help to clarify the functional outcomes of this technique after APR for ultra-low rectal adenocarcinoma.

  14. Ultra-Low Noise Germanium Neutrino Detection system (ULGeN).

    Energy Technology Data Exchange (ETDEWEB)

    Cabrera-Palmer, Belkis [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Barton, Paul [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

    2017-07-01

    Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detector with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.

  15. Ultralow Level Mercury Treatment Using Chemical Reduction and Air Stripping: Scoping Report

    International Nuclear Information System (INIS)

    Looney, B.B.

    2000-01-01

    Data collected during the first stage of a Savannah River Technology Center (SRTC) Strategic Research and Development Project confirmed the efficacy of chemical reduction and air stripping/sparging as an ultralow level mercury treatment concept for waters containing Hg(II). The process consists of dosing the water with low levels of stannous chloride to convert the mercury to Hg. This form of mercury can easily be removed from the water by air stripping or sparging. Samples of Savannah River Site (SRS) groundwater containing approximately 130 ng/L of total mercury (as Hg(II)) were used for the study. In undosed samples, sparging removed 0 percent of the initial mercury. In the dosed samples, all of the removals were greater than 94 percent, except in one water type at one dose. This sample, which was saturated with dissolved oxygen, showed a 63 percent reduction in mercury following treatment at the lowest dose. Following dosing at minimally effective levels and sparging, treated water contained less than 10 ng/L total mercury. In general, the data indicate that the reduction of mercury is highly favored and that stannous chloride reagent efficiently targets the Hg(II) contaminant in the presence of competing reactions. Based on the results, the authors estimated that the costs of implementing and operating an ultralow level mercury treatment process based on chemical reduction and stripping/sparging are 10 percent to 20 percent of traditional treatment technologies

  16. Ultra-Low Power Sensor System for Disaster Event Detection in Metro Tunnel Systems

    Directory of Open Access Journals (Sweden)

    Jonah VINCKE

    2017-05-01

    Full Text Available In this extended paper, the concept for an ultra-low power wireless sensor network (WSN for underground tunnel systems is presented highlighting the chosen sensors. Its objectives are the detection of emergency events either from natural disasters, such as flooding or fire, or from terrorist attacks using explosives. Earlier works have demonstrated that the power consumption for the communication can be reduced such that the data acquisition (i.e. sensor sub-system becomes the most significant energy consumer. By using ultra-low power components for the smoke detector, a hydrostatic pressure sensor for water ingress detection and a passive acoustic emission sensor for explosion detection, all considered threats are covered while the energy consumption can be kept very low in relation to the data acquisition. In addition to 1 the sensor system is integrated into a sensor board. The total average power consumption for operating the sensor sub-system is measured to be 35.9 µW for lower and 7.8 µW for upper nodes.

  17. Development of ultra-low pressure reverse osmosis membranes; Choteiatsu gyakushintomaku no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Hirose, M.; Ito, H.; Ohara, T. [Nitto Denko Corp., Osaka (Japan)

    1998-06-05

    Described herein is development of ultra-low pressure reverse osmosis (RO) membranes. The composite RO membrane, which is now widely used, has a cross-sectional structure consisting of an ultrafilter membrane as the support and a very thin skin layer responsible for filtration. It is confirmed that the skin layer is of a pleated structure. Growing this structure can greatly accelerate permeation of water without damaging arresting and durability characteristics of the membrane, and hence is a desired approach. Utilization of molecular structure simulation of the skin layer materials is investigated by the molecular dynamics. The results show that the stable structure of the material for the skin layer in the RO membrane is a network structure with regularly arranged honeycombs, when it should arrest at least 99% of salt. These techniques serve as the bases for development of the ultra-low pressure RO membranes (ES Series), where the skin layer is made of cross-linked, totally aromatic polyamide. The membrane passes twice as large a quantity of water as the conventional one, is highly resistant to chemicals, and arrests 99.7% of salt. 3 refs., 4 figs.

  18. Ultra-Low Noise Germanium Neutrino Detection system (ULGeN)

    International Nuclear Information System (INIS)

    Cabrera-Palmer, Belkis; Barton, Paul

    2017-01-01

    Monitoring nuclear power plant operation by measuring the antineutrino flux has become an active research field for safeguards and non-proliferation. We describe various efforts to demonstrate the feasibility of reactor monitoring based on the detection of the Coherent Neutrino Nucleus Scattering (CNNS) process with High Purity Germanium (HPGe) technology. CNNS detection for reactor antineutrino energies requires lowering the electronic noise in low-capacitance kg-scale HPGe detectors below 100 eV as well as stringent reduction in other particle backgrounds. Existing state- of-the-art detectors are limited to an electronic noise of 95 eV-FWHM. In this work, we employed an ultra-low capacitance point-contact detector with a commercial integrated circuit preamplifier- on-a-chip in an ultra-low vibration mechanically cooled cryostat to achieve an electronic noise of 39 eV-FWHM at 43 K. We also present the results of a background measurement campaign at the Spallation Neutron Source to select the area with sufficient low background to allow a successful first-time measurement of the CNNS process.

  19. Performance enhancement of polymer Schottky diode by doping pentacene

    International Nuclear Information System (INIS)

    Kang, K.S.; Chen, Y.; Lim, H.K.; Cho, K.Y.; Han, K.J.; Kim, Jaehwan

    2009-01-01

    Schottky diodes have been fabricated using pentacene-doped poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) as a semiconducting material. To understand the fundamental properties of the pentacene-doped PEDOT:PSS, ultraviolet visible (UV) absorption spectroscopy was employed. It was found that a significant amount of pentacene can dissolve in n-methylpyrrolidone solvent. No characteristic absorption peak of pentacene was observed in the UV-visible spectra of PEDOT:PSS films doped with pentacene,. However, the absorption intensity of the doped PEDOT:PSS films increased as the pentacene concentration increased in particular in the UV region. The atomic force microscope images show that the surface roughnesses of PEDOT:PSS films increased as the pentacene concentration increased. Three-layer Schottky diodes comprising Al/PEDOT:PSS/Au or Al/PEDOT:PSS-pentacene/Au were fabricated. The maximum forward currents of non-doped and doped Schottky diodes were 4.8 and 440 μA/cm 2 at 3.3 MV/m, respectively. The forward current increased nearly two orders of magnitude for Schottky diode doped with 11.0 wt.% of pentacene.

  20. Silver doped metal layers for medical applications

    International Nuclear Information System (INIS)

    Kocourek, T; Jelínek, M; Mikšovský, J; Jurek, K; Weiserová, M

    2014-01-01

    Biological, physical and mechanical properties of silver-doped layers of titanium alloy Ti6Al4V and 316L steel prepared by pulsed laser deposition were studied. Metallic silver-doped coatings could be a new route for antibacterial protection in medicine. Thin films of silver and silver-doped materials were synthesized using KrF excimer laser deposition. The materials were ablated from two targets, which were composed either from titanium alloy with silver segments or from steel with silver segments. The concentration of silver ranged from 1.54 at% to 4.32 at% for steel and from 3.04 at% to 13.05 at% for titanium alloy. The layer properties such as silver content, structure, adhesion, surface wettability, and antibacterial efficacy (evaluated by Escherichia coli and Bacillus subtilis bacteria) were measured. Film adhesion was studied using scratch test. The antibacterial efficacy changed with silver doping up to 99.9 %. Our investigation was focused on minimum Ag concentration needed to reach high antibacterial efficiency, high film adhesion, and hardness.

  1. Electron field emission from boron doped microcrystalline diamond

    International Nuclear Information System (INIS)

    Roos, M.; Baranauskas, V.; Fontana, M.; Ceragioli, H.J.; Peterlevitz, A.C.; Mallik, K.; Degasperi, F.T.

    2007-01-01

    Field emission properties of hot filament chemical vapor deposited boron doped polycrystalline diamond have been studied. Doping level (N B ) of different samples has been varied by the B/C concentration in the gas feed during the growth process and doping saturation has been observed for high B/C ratios. Threshold field (E th ) for electron emission as function of B/C concentration has been measured, and the influences of grain boundaries, doping level and surface morphology on field emission properties have been investigated. Carrier transport through conductive grains and local emission properties of surface sites have been figured out to be two independent limiting effects in respect of field emission. Emitter current densities of 500 nA cm -2 were obtained using electric fields less than 8 V/μm

  2. Structural and electrical characterization of zinc oxide doped with antimony

    Directory of Open Access Journals (Sweden)

    G. Juárez Díaz

    2014-08-01

    Full Text Available In this work we report the results of structural and electrical characterization realized on zinc oxide single crystal samples with (001 orientation, which were doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of 1 and 2 hours under nitrogen environment from a solid source formed by antimony oxide. Electrical characterization by I-V curves and Hall effect shown an increase in acceptor concentration which demonstrates that doping is effective and create holes in zinc oxide samples.

  3. Borazino-Doped Polyphenylenes.

    Science.gov (United States)

    Marinelli, Davide; Fasano, Francesco; Najjari, Btissam; Demitri, Nicola; Bonifazi, Davide

    2017-04-19

    The divergent synthesis of two series of borazino-doped polyphenylenes, in which one or more aryl units are replaced by borazine rings, is reported for the first time, taking advantage of the decarbonylative [4 + 2] Diels-Alder cycloaddition reaction between ethynyl and tetraphenylcyclopentadienone derivatives. Because of the possibility of functionalizing the borazine core with different groups on the aryl substituents at the N and B atoms of the borazino core, we have prepared borazino-doped polyphenylenes featuring different doping dosages and orientations. To achieve this, two molecular modules were prepared: a core and a branching unit. Depending on the chemical natures of the central aromatic module and the reactive group, each covalent combination of the modules yields one exclusive doping pattern. By means of this approach, three- and hexa-branched hybrid polyphenylenes featuring controlled orientations and dosages of the doping B 3 N 3 rings have been prepared. Detailed photophysical investigations showed that as the doping dosage is increased, the strong luminescent signal is progressively reduced. This suggests that the presence of the B 3 N 3 rings engages additional deactivation pathways, possibly involving excited states with an increasing charge-separated character that are restricted in the full-carbon analogues. Notably, a strong effect of the orientational doping on the fluorescence quantum yield was observed for those hybrid polyphenylene structures featuring low doping dosages. Finally, we showed that Cu-catalyzed 1,3-dipolar cycloaddition is also chemically compatible with the BN core, further endorsing the inorganic benzene as a versatile aromatic scaffold for engineering of molecular materials with tailored and exploitable optoelectronic properties.

  4. Field evaluation of indoor thermal fog and ultra-low volume applications for control of Aedes aegypti, in Thailand

    Science.gov (United States)

    Efficacies of a hand-held thermal fogger (PatriotTM) and hand-held Ultra-low volume (ULV) sprayer (TwisterTM) with combinations of two different adulticides and an insect growth regulator (pyriproxyfen) were field assessed and compared for their impact on reducing dengue vector populations in Thaila...

  5. Spectroscopic properties of highly Nd-doped lead phosphate glass

    Energy Technology Data Exchange (ETDEWEB)

    Novais, A.L.F. [Instituto de Física, Universidade Federal de Alagoas, Grupo de Fotônica e Fluidos Complexos, 57072-970 Maceió, AL (Brazil); Dantas, N.O. [Laboratório de Novos Materiais Isolantes e Semicondutores (LNMIS), Instituto de Física, Universidade Federal de Uberlândia, 38400-902 Uberlândia, MG (Brazil); Guedes, I. [Departamento de Física, Universidade Federal do Ceará, Campus do PICI, Caixa Postal 6030, 60455-760 Fortaleza, CE (Brazil); Vermelho, M.V.D., E-mail: vermelho@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Grupo de Fotônica e Fluidos Complexos, 57072-970 Maceió, AL (Brazil)

    2015-11-05

    The spectroscopic characteristics of highly Nd{sup 3+}-doped lead phosphate glasses (xNd:Pb{sub 3}(PO{sub 4}){sub 2}) have been investigated. The X-ray spectra show that the matrices are glassy up to 25 wt% of Nd{sup 3+} doping. From the Judd–Ofelt analysis we observe that while the Ω{sub (2)} parameter remains constant indicating that the 4f{sup N} and 4f{sup N−1}5 d{sup 1} configurations are not affected by the Nd{sup 3+} doping, the behavior of both Ω{sub (4)} and Ω{sub (6)} changes for 15 wt% of Nd{sup 3+} doping. The reduction of the Ω{sub (6)} parameter is related to the increase of the covalence bonding between the ligands and the Nd{sup 3+} ions. At this particular concentration, the radiative lifetime has a four-fold enhancement. Such behaviors are likely to be related to a modification in the glass structure for high Nd{sup 3+} concentrations. - Graphical abstract: Highly doped lead-phosphate glass matrix, with nominal concentration of up to 25 wt%, maintain the spectroscopic properties without deterioration. The analysis concerning the point of view of Nd{sup 3+} ions showed that high concentrations only affects the rare earth electronic charge density distribution. - Highlights: • Spectroscopic characterization of Nd{sub 2}O{sub 3} highly doped lead phosphate glasses. • Phosphate glass doped with Nd{sup 3+} for applications in photonic devices. • Judd–Ofelt analysis in phosphate glasses doped with Neodymium.

  6. Investigations on vanadium doped glasses

    International Nuclear Information System (INIS)

    Madhusudana Rao, P.

    2013-01-01

    The glass samples studied in the present work have been prepared by melt quenching technique. They were prepared by mixing and grinding together by appropriate amounts of Li 2 O - Na 2 O - B 2 O 3 doped with V 2 O 5 in an agate motor before transferring into crucible. The mixtures were heated in an electric furnace at 1225K for 20 mm. The melt was then quenched to room temperature by pouring it on plane brass plate and pressing it with another brass plate. White and yellow coloured glasses have been obtained with good optical quality and high transparency. Finally the vitreous sample were annealed for 3 hrs at 423K to relieve residual internal stress and slowly cooled to room temperature. The polished glasses have been used for XRD, FTIR analysis and for DSC report. The DSC thermo grams for all the glasses were recorded on in the temperature range 50-550℃ with a heating rate of 10℃/min. Electron spin resonance and optical absorption of 20Li 2 O - 10 Na 2 O - (70-X)B 2 O 3 doped with XV 2 O 5 glass system are studied. ESR spectra of V 4+ ions doped in the glass exhibit peak at g =1.98. Spin Hamiltonian parameters are calculated. It was found that these parameters are dependent upon alkali ion concentration in the glass and the VO +2 ion in an octahedral coordination with a tetragonal compression. The physical parameters of all glasses were also evaluated with respect to the composition

  7. Magnetic behavior of Co–Mn co-doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Li, Hengda; Liu, Xinzhong; Zheng, Zhigong

    2014-01-01

    Here, we report on systematic studies of the magnetic properties of Co and Mn co-doped ZnO nanoparticles prepared by a sol–gel technique. The effect of the concentration of the doping ions on the magnetic properties of Co and Mn co-doped ZnO nanoparticles is presented. X-ray diffraction characterizations (XRD) of co-doped ZnO nanoparticles are all wurtzite structure. The Zn 0.96 Co 0.02 Mn 0.02 O nanoparticles and Zn 0.94 Co 0.02 Mn 0.04 O nanoparticles display ferromagnetic behavior at room temperature. Superconducting quantum interference device (SQUID) magnetometer figures show that with the concentration of the Mn ions increased, the saturation magnetic moment (M s ) increased, and the magnetic is probably due to the co-doping of the Mn ions. Our results demonstrate that the Mn ions doping concentration play an important role in the ferromagnetic properties of Co–Mn co-doped ZnO nanoparticles at room temperature. - Highlights: • The effect of the doping ions on the magnetic properties is presented. • The magnetic is probably due to the co-doping of the Mn ions. • The Mn ions concentration play an important role in the ferromagnetic properties

  8. Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

    Science.gov (United States)

    Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

    2017-02-01

    Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic

  9. Photoluminescence of phosphorus atomic layer doped Ge grown on Si

    Science.gov (United States)

    Yamamoto, Yuji; Nien, Li-Wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd

    2017-10-01

    Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 × 1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ˜0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ˜2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

  10. Ultralow dose dentomaxillofacial CT imaging and iterative reconstruction techniques: variability of Hounsfield units and contrast-to-noise ratio

    Science.gov (United States)

    Bischel, Alexander; Stratis, Andreas; Kakar, Apoorv; Bosmans, Hilde; Jacobs, Reinhilde; Gassner, Eva-Maria; Puelacher, Wolfgang; Pauwels, Ruben

    2016-01-01

    Objective: The aim of this study was to evaluate whether application of ultralow dose protocols and iterative reconstruction technology (IRT) influence quantitative Hounsfield units (HUs) and contrast-to-noise ratio (CNR) in dentomaxillofacial CT imaging. Methods: A phantom with inserts of five types of materials was scanned using protocols for (a) a clinical reference for navigated surgery (CT dose index volume 36.58 mGy), (b) low-dose sinus imaging (18.28 mGy) and (c) four ultralow dose imaging (4.14, 2.63, 0.99 and 0.53 mGy). All images were reconstructed using: (i) filtered back projection (FBP); (ii) IRT: adaptive statistical iterative reconstruction-50 (ASIR-50), ASIR-100 and model-based iterative reconstruction (MBIR); and (iii) standard (std) and bone kernel. Mean HU, CNR and average HU error after recalibration were determined. Each combination of protocols was compared using Friedman analysis of variance, followed by Dunn's multiple comparison test. Results: Pearson's sample correlation coefficients were all >0.99. Ultralow dose protocols using FBP showed errors of up to 273 HU. Std kernels had less HU variability than bone kernels. MBIR reduced the error value for the lowest dose protocol to 138 HU and retained the highest relative CNR. ASIR could not demonstrate significant advantages over FBP. Conclusions: Considering a potential dose reduction as low as 1.5% of a std protocol, ultralow dose protocols and IRT should be further tested for clinical dentomaxillofacial CT imaging. Advances in knowledge: HU as a surrogate for bone density may vary significantly in CT ultralow dose imaging. However, use of std kernels and MBIR technology reduce HU error values and may retain the highest CNR. PMID:26859336

  11. Effect of light Si doping on the properties of GaN

    International Nuclear Information System (INIS)

    Shang, Lin; Zhai, Guangmei; Jia, Zhigang; Mei, Fuhong; Lu, Taiping; Liu, Xuguang; Xu, Bingshe

    2016-01-01

    An obvious increase in electron mobility and yellow luminescence (YL) band intensity was found in light Si doping GaN. For a series of GaN samples with different doping concentration, the dislocation density is almost the same. It is inferred that the abrupt increase in mobility and YL intensity does not originate from the change of dislocation density. The mobility behavior is attributed to the screening of scattering by dislocation and increase of ionized impurity scattering with the increase of Si doping concentration. At lower doping level, the screening of dislocation scattering is dominant, which results in the increase in carrier mobility. At higher doping level, the increase in ionized impurity scattering leads to the decrease in carrier mobility. Higher mobility causes longer diffusion length of nonequilibrium carrier. More dislocations will participate in the recombination process which induces stronger YL intensity in light Si doping GaN.

  12. Effect of Cr doping on structural and magnetic properties of ZnS nanoparticles

    International Nuclear Information System (INIS)

    Virpal,; Singh, Jasvir; Sharma, Sandeep; Singh, Ravi Chand

    2016-01-01

    The structural, optical and magnetic properties of pure and Cr doped ZnS nanoparticles were studied at room temperature. X-ray diffraction analysis confirmed the absence of any mixed phase and the cubic structure of ZnS in pure and Cr doped ZnS nanoparticles. Fourier transfer infrared spectra confirmed the Zn-S stretching bond at 664 cm"−"1 of ZnS in all prepared nanoparticles. The UV-Visible absorption spectra showed blue shift which became even more pronounced in Cr doped ZnS nanoparticles. However, at relatively higher Cr concentrations a slower red shift was shown by the doped nanoparticles. This phenomenon is attributed to sp-d exchange interaction that becomes prevalent at higher doping concentrations. Further, magnetic hysteresis measurements showed that Cr doped ZnS nanoparticles exhibited ferromagnetic behavior at room temperature.

  13. Microstructural, optical and electrical properties of Cl-doped CdTe single crystals

    Directory of Open Access Journals (Sweden)

    Choi Hyojeong

    2016-09-01

    Full Text Available Microstructural, optical and electrical properties of Cl-doped CdTe crystals grown by the low pressure Bridgman (LPB method were investigated for four different doping concentrations (unintentionally doped, 4.97 × 1019 cm−3, 9.94 × 1019 cm−3 and 1.99 × 1020 cm−3 and three different locations within the ingots (namely, samples from top, middle and bottom positions in the order of the distance from the tip of the ingot. It was shown that Cl dopant suppressed the unwanted secondary (5 1 1 crystalline orientation. Also, the average size and surface coverage of Te inclusions decreased with an increase in Cl doping concentration. Spectroscopic ellipsometry measurements showed that the optical quality of the Cl-doped CdTe single crystals was enhanced. The resistivity of the CdTe sample doped with Cl at the 1.99 × 1020 cm−3 was above 1010 Ω.cm.

  14. Sanctions for doping in sport

    Directory of Open Access Journals (Sweden)

    Mandarić Sanja

    2014-01-01

    Full Text Available Top-level sport imposes new and more demanding physical and psychological pressures, and the desire for competing, winning and selfassertion leads athletes into temptation to use prohibited substances in order to achieve the best possible results. Regardless of the fact that the adverse consequences of prohibited substances are well-known, prestige and the need to dominate sports arenas have led to their use in sports. Doping is one of the biggest issues in sport today, and the fight against it is a strategic objective on both global and national levels. World Anti-Doping Agency, the International Olympic Committee, international sports federations, national anti-doping agencies, national sports federations, as well as governments and their repressive apparatuses are all involved in the fight against doping in sport. This paper points to a different etymology and phenomenology of doping, the beginnings of doping in sport, sports doping scandals as well as the most important international instruments regulating this issue. Also, there is a special reference in this paper to the criminal and misdemeanor sanctions for doping in sport. In Serbia doping in sport is prohibited by the Law on Prevention of Doping in Sports which came into force in 2005 and which prescribes the measures and activities aimed at prevention of doping in sport. In this context, the law provides for the following three criminal offenses: use of doping substances, facilitating the use of doping substances, and unauthorized production and putting on traffic of doping substances. In addition, aiming at curbing the abuse of doping this law also provides for two violations. More frequent and repetitive doping scandals indicate that doping despite long-standing sanctions is still present in sports, which suggests that sanctions alone have not given satisfactory results so far.

  15. Genetic algorithm based approach to investigate doped metal oxide materials: Application to lanthanide-doped ceria

    Science.gov (United States)

    Hooper, James; Ismail, Arif; Giorgi, Javier B.; Woo, Tom K.

    2010-06-01

    A genetic algorithm (GA)-inspired method to effectively map out low-energy configurations of doped metal oxide materials is presented. Specialized mating and mutation operations that do not alter the identity of the parent metal oxide have been incorporated to efficiently sample the metal dopant and oxygen vacancy sites. The search algorithms have been tested on lanthanide-doped ceria (L=Sm,Gd,Lu) with various dopant concentrations. Using both classical and first-principles density-functional-theory (DFT) potentials, we have shown the methodology reproduces the results of recent systematic searches of doped ceria at low concentrations (3.2% L2O3 ) and identifies low-energy structures of concentrated samarium-doped ceria (3.8% and 6.6% L2O3 ) which relate to the experimental and theoretical findings published thus far. We introduce a tandem classical/DFT GA algorithm in which an inexpensive classical potential is first used to generate a fit gene pool of structures to enhance the overall efficiency of the computationally demanding DFT-based GA search.

  16. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    International Nuclear Information System (INIS)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-01-01

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

  17. Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure.

    Science.gov (United States)

    Zhang, Qiang; Xin, Tianyuan; Lu, Xiaoke; Wang, Yuexia

    2018-03-16

    We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.

  18. Highly improved hydration level sensing properties of copper oxide films with sodium and potassium doping

    Science.gov (United States)

    Sahin, Bünyamin; Kaya, Tolga

    2016-01-01

    In this study, un-doped, Na-doped, and K-doped nanostructured CuO films were successfully synthesized by the successive ionic layer adsorption and reaction (SILAR) technique and then characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and current-voltage (I-V) measurements. Structural properties of the CuO films were affected from doping. The XRD pattern indicates the formation of polycrystalline CuO films with no secondary phases. Furthermore, doping affected the crystal structure of the samples. The optimum conductivity values for both Na and K were obtained at 4 M% doping concentrations. The comparative hydration level sensing properties of the un-doped, Na-doped, and K-doped CuO nanoparticles were also investigated. A significant enhancement in hydration level sensing properties was observed for both 4 M% Na and K-doped CuO films for all concentration levels. Detailed discussions were reported in the study regarding atomic radii, crystalline structure, and conductivity.

  19. Optoelectronic Properties of X-Doped (X = O, S, Te Photovoltaic CSe with Puckered Structure

    Directory of Open Access Journals (Sweden)

    Qiang Zhang

    2018-03-01

    Full Text Available We exploited novel two-dimensional (2D carbon selenide (CSe with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te, i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.

  20. Doped silicene: Evidence of a wide stability range

    KAUST Repository

    Cheng, Yingchun; Zhu, Zhiyong; Schwingenschlö gl, Udo

    2011-01-01

    to the carrier concentration, it is stable in a wide doping range. The frequencies of the E2g-Γ and A′-K Raman modes can be used to probe the carrier concentration. In addition, the phonon dispersion displays Kohn anomalies at the Γ and K points which are reduced

  1. Luminescent solar concentrators with fiber geometry.

    Science.gov (United States)

    Edelenbosch, Oreane Y; Fisher, Martyn; Patrignani, Luca; van Sark, Wilfried G J H M; Chatten, Amanda J

    2013-05-06

    The potential of a fibre luminescent solar concentrator has been explored by means of both analytical and ray-tracing techniques. Coated fibres have been found to be more efficient than homogeneously doped fibres, at low absorption. For practical fibres concentration is predicted to be linear with fibre length. A 1 m long, radius 1 mm, fibre LSC doped with Lumogen Red 305 is predicted to concentrate the AM1.5 g spectrum up to 1100 nm at normal incidence by ~35 x. The collection efficiency under diffuse and direct irradiance in London has been analysed showing that, even under clear sky conditions, in winter the diffuse contribution equals the direct.

  2. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

    International Nuclear Information System (INIS)

    Chen, Min-Hua; Lin, Feng-Huei; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Tanaka, Junzo; Hanagata, Nobutaka

    2014-01-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications. (paper)

  3. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles.

    Science.gov (United States)

    Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

    2014-10-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of 'personalized medicine' with diagnostic and therapeutic dual-functions. Eu 3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca 2+ with Fe 3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu 3+ and Fe 3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu 3+ and Fe 3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu 3+ and Fe 3+ , and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

  4. Photoluminescence and doping mechanism of theranostic Eu3+/Fe3+ dual-doped hydroxyapatite nanoparticles

    Science.gov (United States)

    Chen, Min-Hua; Yoshioka, Tomohiko; Ikoma, Toshiyuki; Hanagata, Nobutaka; Lin, Feng-Huei; Tanaka, Junzo

    2014-10-01

    Theranostic nanoparticles currently have been regarded as an emerging concept of ‘personalized medicine’ with diagnostic and therapeutic dual-functions. Eu3+ doped hydroxyapatite (HAp) has been regarded as a promising fluorescent probe for in vivo imaging applications. Additionally, substitution of Ca2+ with Fe3+ in HAp crystal may endow the capability of producing heat upon exposure to a magnetic field. Here we report a preliminary study of doping mechanism and photoluminescence of Eu3+ and Fe3+ doped HAp nanoparticles (Eu/Fe:HAp). HAp with varied concentration of Eu3+ and Fe3+ doping are presented as Eu(10 mol%):HAp, Eu(7 mol%)-Fe(3 mol%):HAp, Eu(5 mol%)-Fe(5 mol%):HAp, Eu(3 mol%)-Fe(7 mol%):HAp, and Fe(10 mol%):HAp in the study. The results showed that the HAp particles, in nano-size with rod-like morphology, were successfully doped with Eu3+ and Fe3+, and the particles can be well suspended in cell culture medium. Photoluminescence analysis revealed that particles have prominent emissions at 536 nm, 590 nm, 615 nm, 650 nm and 695 nm upon excitation at a wavelength of 397 nm. Moreover, these Eu/Fe:HAp nanoparticles belonged to B-type carbonated HAp, which has been considered an effective biodegradable and biocompatible drug/gene carrier in biological applications.

  5. Development of contaminant detection system based on ultra-low field SQUID-NMR/MRI

    International Nuclear Information System (INIS)

    Tsunaki, S; Yamamoto, M; Hatta, J; Hatsukade, Y; Tanaka, S

    2014-01-01

    We have developed an ultra-low field (ULF) NMR/MRI system using an HTS-rf-SQUID and evaluated performance of the system as a contaminant detection system for foods and drinks. In this work, we measured 1D MRIs from water samples with or without various contaminants, such as aluminum and glass balls using the system. In the 1D MRIs, changes of the MRI spectra were detected, corresponding to positions of the contaminants. We measured 2D MRIs from food samples with and without a hole. In the 2D MRIs, the hole position in the sample was well visualized. These results show that the feasibility of the system to detect and localize contaminants in foods and drinks.

  6. Theory and experiment research for ultra-low frequency maglev vibration sensor

    International Nuclear Information System (INIS)

    Zheng, Dezhi; Liu, Yixuan; Guo, Zhanshe; Fan, Shangchun; Zhao, Xiaomeng

    2015-01-01

    A new maglev sensor is proposed to measure ultra-low frequency (ULF) vibration, which uses hybrid-magnet levitation structure with electromagnets and permanent magnets as the supporting component, rather than the conventional spring structure of magnetoelectric vibration sensor. Since the lower measurement limit needs to be reduced, the equivalent bearing stiffness coefficient and the equivalent damping coefficient are adjusted by the sensitivity unit structure of the sensor and the closed-loop control system, which realizes both the closed-loop control and the solving algorithms. A simple sensor experimental platform is then assembled based on a digital hardware system, and experimental results demonstrate that the lower measurement limit of the sensor is increased to 0.2 Hz under these experimental conditions, indicating promising results of the maglev sensor for ULF vibration measurements

  7. Broadband noise limit in the photodetection of ultralow jitter optical pulses.

    Science.gov (United States)

    Sun, Wenlu; Quinlan, Franklyn; Fortier, Tara M; Deschenes, Jean-Daniel; Fu, Yang; Diddams, Scott A; Campbell, Joe C

    2014-11-14

    Applications with optical atomic clocks and precision timing often require the transfer of optical frequency references to the electrical domain with extremely high fidelity. Here we examine the impact of photocarrier scattering and distributed absorption on the photocurrent noise of high-speed photodiodes when detecting ultralow jitter optical pulses. Despite its small contribution to the total photocurrent, this excess noise can determine the phase noise and timing jitter of microwave signals generated by detecting ultrashort optical pulses. A Monte Carlo simulation of the photodetection process is used to quantitatively estimate the excess noise. Simulated phase noise on the 10 GHz harmonic of a photodetected pulse train shows good agreement with previous experimental data, leading to the conclusion that the lowest phase noise photonically generated microwave signals are limited by photocarrier scattering well above the quantum limit of the optical pulse train.

  8. Ultra-low field NMR for detection and characterization of 235 UF6

    Energy Technology Data Exchange (ETDEWEB)

    Espy, Michelle A [Los Alamos National Laboratory; Magnelind, Per E [Los Alamos National Laboratory; Matlashov, Andrei N [Los Alamos National Laboratory; Urbaitis, Algis V [Los Alamos National Laboratory; Volegov, Petr L [Los Alamos National Laboratory

    2009-01-01

    We have demonstrated the first ultra-low field (ULF) nuclear magnetic resonance measurements of uranium hexafluoride (UF{sub 6}), both depleted and 70% enriched, which is used in the uranium enrichment process. A sensitive non-invasive detection system would have an important role in non-proliferation surveillance. A two-frequency technique was employed to remove the transients induced by rapidly switching off the 50 mT pre-polarization field. A mean transverse relaxation time T{sub 2} of 24 ms was estimated for the un-enriched UF{sub 6} sample measured at a mean temperature of 80 C. Nuclear magnetic resonance at ULF has several advantages including the ability to measure through metal, such as pipes, and simple magnetic field generation hardware. We present here recent data and discuss the potential for non-proliferation monitoring of enrichment and flow velocity.

  9. Theory and experiment research for ultra-low frequency maglev vibration sensor

    Science.gov (United States)

    Zheng, Dezhi; Liu, Yixuan; Guo, Zhanshe; Zhao, Xiaomeng; Fan, Shangchun

    2015-10-01

    A new maglev sensor is proposed to measure ultra-low frequency (ULF) vibration, which uses hybrid-magnet levitation structure with electromagnets and permanent magnets as the supporting component, rather than the conventional spring structure of magnetoelectric vibration sensor. Since the lower measurement limit needs to be reduced, the equivalent bearing stiffness coefficient and the equivalent damping coefficient are adjusted by the sensitivity unit structure of the sensor and the closed-loop control system, which realizes both the closed-loop control and the solving algorithms. A simple sensor experimental platform is then assembled based on a digital hardware system, and experimental results demonstrate that the lower measurement limit of the sensor is increased to 0.2 Hz under these experimental conditions, indicating promising results of the maglev sensor for ULF vibration measurements.

  10. Formation mechanism of spheroidal carbide in ultra-low carbon ductile cast iron

    Directory of Open Access Journals (Sweden)

    Bin-guo Fu

    2016-09-01

    Full Text Available The formation mechanism of the spheroidal carbide in the ultra-low carbon ductile cast iron fabricated by the metal mold casting technique was systematically investigated. The results demonstrated that the spheroidal carbide belonged to eutectic carbide and crystallized in the isolated eutectic liquid phase area. The formation process of the spheroidal carbide was related to the contact and the intersection between the primary dendrite and the secondary dendrite of austenite. The oxides of magnesium, rare earths and other elements can act as heterogeneous nucleation sites for the spheroidal carbide. It was also found that the amount of the spheroidal carbide would increase with an increase in carbon content. The cooling rate has an important influence on the spheroidal carbide under the same chemical composition condition.

  11. Direct imaging of neural currents using ultra-low field magnetic resonance techniques

    Science.gov (United States)

    Volegov, Petr L [Los Alamos, NM; Matlashov, Andrei N [Los Alamos, NM; Mosher, John C [Los Alamos, NM; Espy, Michelle A [Los Alamos, NM; Kraus, Jr., Robert H.

    2009-08-11

    Using resonant interactions to directly and tomographically image neural activity in the human brain using magnetic resonance imaging (MRI) techniques at ultra-low field (ULF), the present inventors have established an approach that is sensitive to magnetic field distributions local to the spin population in cortex at the Larmor frequency of the measurement field. Because the Larmor frequency can be readily manipulated (through varying B.sub.m), one can also envision using ULF-DNI to image the frequency distribution of the local fields in cortex. Such information, taken together with simultaneous acquisition of MEG and ULF-NMR signals, enables non-invasive exploration of the correlation between local fields induced by neural activity in cortex and more `distant` measures of brain activity such as MEG and EEG.

  12. Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

    Directory of Open Access Journals (Sweden)

    Evgeny Pikhay

    2017-07-01

    Full Text Available In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

  13. Achievement of ultralow emittance coupling in the Australian Synchrotron storage ring

    Directory of Open Access Journals (Sweden)

    R. Dowd

    2011-01-01

    Full Text Available Investigations into producing an electron beam with ultralow vertical emittance have been conducted using the Australian Synchrotron 3 GeV storage ring. A method of tuning the emittance coupling (ϵ_{y}/ϵ_{x} has been developed using a machine model calibrated through the linear optics from closed orbits method. Direct measurements of the beam emittance have not been possible due to diagnostic limitations, however two independent indirect measurements both indicate a vertical emittance of 1.2–1.3 pm rad (ϵ_{y}/ϵ_{x}=0.01%. Other indirect measurements support the validity of these results. This result is the smallest vertical emittance currently achieved in a storage ring.

  14. Applicability of ultralow-frequency global resonances for investigating lightning activity on Venus

    International Nuclear Information System (INIS)

    Nikolaenko, A.P.; Rabinovich, L.M.

    1987-01-01

    The application to experiments on Venus of methods of investigating global lightning activity that are used on earth in the ultralow-frequency range is discussed. Calculations of the electromagnetic fields in the range from a few Hertz to tens of Hertz are carried out in the framework of the model of the lower ionosphere of Venus, which generalizes the information about the planet's atmosphere which is presently available. The calculations showed that observations of global resonances on Venus must, as on the earth, allow one to obtain data about the global distribution of lightning in space and time, and to make the values of the parameters of the lower ionosphere model more precise

  15. A cryogen-free ultralow-field superconducting quantum interference device magnetic resonance imaging system.

    Science.gov (United States)

    Eom, Byeong Ho; Penanen, Konstantin; Hahn, Inseob

    2014-09-01

    Magnetic resonance imaging (MRI) at microtesla fields using superconducting quantum interference device (SQUID) detection has previously been demonstrated, and advantages have been noted. Although the ultralow-field SQUID MRI technique would not need the heavy superconducting magnet of conventional MRI systems, liquid helium required to cool the low-temperature detector still places a significant burden on its operation. We have built a prototype cryocooler-based SQUID MRI system that does not require a cryogen. The SQUID detector and the superconducting gradiometer were cooled down to 3.7 K and 4.3 K, respectively. We describe the prototype design, characterization, a phantom image, and areas of further improvements needed to bring the imaging performance to parity with conventional MRI systems.

  16. Ultra-low noise TES bolometer arrays for SAFARI instrument on SPICA

    Science.gov (United States)

    Khosropanah, P.; Suzuki, T.; Ridder, M. L.; Hijmering, R. A.; Akamatsu, H.; Gottardi, L.; van der Kuur, J.; Gao, J. R.; Jackson, B. D.

    2016-07-01

    SRON is developing ultra-low noise Transition Edge Sensors (TESs) based on a superconducting Ti/Au bilayer on a suspended SiN island with SiN legs for the SAFARI instrument aboard the SPICA mission. We successfully fabricated TESs with very narrow (0.5-0.7 μm) and thin (0.25 μm) SiN legs on different sizes of SiN islands using deep reactiveion etching process. The pixel size is 840x840 μm2 and there are variety of designs with and without optical absorbers. For TESs without absorbers, we measured electrical NEPs as low as <1x10-19 W/√Hz with response time of 0.3 ms and reached the phonon noise limit. Using TESs with absorbers, we quantified the darkness of our setup and confirmed a photon noise level of 2x10-19 W/√Hz.

  17. Operando formation of an ultra-low friction boundary film from synthetic magnesium silicon hydroxide additive

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Qiuying; Rudenko, Pavlo; Miller, Dean J.; Wen, Jianguo; Berman, Diana; Zhang, Yuepeng; Arey, Bruce; Zhu, Zihua; Erdemir, Ali

    2017-06-01

    The paper reports the operando and self-healing formation of DLC films at sliding contact surfaces by the addition of synthetic magnesium silicon hydroxide (MSH) nanoparticles to base oil. The formation of such films leads to a reduction of the coefficient of friction by nearly an order of magnitude and substantially reduces wear losses. The ultralow friction layer characterized by transmission electron microscope (TEM), electron energy loss spectroscopy (EELS), and Raman spectroscopy consists of amorphous DLC containing SiOx that forms in a continuous and self-repairing manner during operation. This environmentally benign and simple approach offers promise for significant advances in lubrication and reduced energy losses in engines and other mechanical systems.

  18. Theory and experiment research for ultra-low frequency maglev vibration sensor

    Energy Technology Data Exchange (ETDEWEB)

    Zheng, Dezhi; Liu, Yixuan, E-mail: xuan61x@163.com; Guo, Zhanshe; Fan, Shangchun [School of Instrument Science and Opto-electronics Engineering, Beihang University, Beijing 100191 (China); Zhao, Xiaomeng [Laser Medicine Laboratory, Institute of Biomedical Engineering, Chinese Academy of medical Sciences and Peking Union Medical College, Tianjin 300192 (China)

    2015-10-15

    A new maglev sensor is proposed to measure ultra-low frequency (ULF) vibration, which uses hybrid-magnet levitation structure with electromagnets and permanent magnets as the supporting component, rather than the conventional spring structure of magnetoelectric vibration sensor. Since the lower measurement limit needs to be reduced, the equivalent bearing stiffness coefficient and the equivalent damping coefficient are adjusted by the sensitivity unit structure of the sensor and the closed-loop control system, which realizes both the closed-loop control and the solving algorithms. A simple sensor experimental platform is then assembled based on a digital hardware system, and experimental results demonstrate that the lower measurement limit of the sensor is increased to 0.2 Hz under these experimental conditions, indicating promising results of the maglev sensor for ULF vibration measurements.

  19. A cryogen-free ultralow-field superconducting quantum interference device magnetic resonance imaging system

    International Nuclear Information System (INIS)

    Eom, Byeong Ho; Penanen, Konstantin; Hahn, Inseob

    2014-01-01

    Magnetic resonance imaging (MRI) at microtesla fields using superconducting quantum interference device (SQUID) detection has previously been demonstrated, and advantages have been noted. Although the ultralow-field SQUID MRI technique would not need the heavy superconducting magnet of conventional MRI systems, liquid helium required to cool the low-temperature detector still places a significant burden on its operation. We have built a prototype cryocooler-based SQUID MRI system that does not require a cryogen. The SQUID detector and the superconducting gradiometer were cooled down to 3.7 K and 4.3 K, respectively. We describe the prototype design, characterization, a phantom image, and areas of further improvements needed to bring the imaging performance to parity with conventional MRI systems

  20. Seventy kilovolt ultra-low dose CT of the paranasal sinus: first clinical results

    International Nuclear Information System (INIS)

    Bodelle, B.; Wichmann, J.L.; Klotz, N.; Lehnert, T.; Vogl, T.J.; Luboldt, W.; Schulz, B.

    2015-01-01

    Aim: To evaluate the diagnostic image quality and radiation dose of low-dose 70 kV computed tomography (CT) of the paranasal sinus in comparison to 100 and 120 kV CT. Materials and methods: CT of the paranasal sinus was performed in 127 patients divided into three groups using different tube voltages and currents (70 kV/75 mAs, ultra-low dose protocol, n = 44; 100 kV/40 mAs, standard low-dose protocol, n = 42; 120 kV/40 mAs, standard protocol, n = 41). CT dose index (CTDIvol), dose–length product (DLP), attenuation, image noise and signal-to-noise ratio (SNR) were compared between the groups using Wilcoxon–Mann–Whitney U-test. Subjective diagnostic image quality was compared by using a five-point scale (1 = non-diagnostic, 5 = excellent, read by two readers in consensus) and Cohen's weighted kappa analysis for interobserver agreement. Results: Radiation dose was significantly lower with 70 kV acquisition than 100 and 120 kV (DLP: 31 versus 52 versus 82 mGy·cm; CTDI 2.33 versus 3.95 versus 6.31 mGy, all p < 0.05). Mean SNR (70 kV: 0.37; 100 kV: 0.21; 120 kV: 0.13; p < 0.05) and organ attenuation increased significantly with lower voltages. All examinations showed diagnostic image quality. Subjective diagnostic image quality was higher with standard protocols than the 70 kV protocol (120 kV: 5.0; 100 kV: 4.5; 70 kV: 3.5, p < 0.05) without significant differences with substantial interobserver agreement (κ > 0.59). Conclusion: The ultra-low dose (70 kV) CT imaging of the paranasal sinus allowed for significant dose reduction by 61% and an increased attenuation of organ structures in comparison to standard acquisition while maintaining diagnostic image quality with a slight reduction in subjective image quality. -- Highlights: •Image quality and radiation dose of 70 kV ultra-low dose CT of the paranasal sinus. •70 kV ultra-low dose CT of the paranasal sinus allows for dose reduction by 61%. •70 kV CT of the

  1. Development of Ultra-Low Power Metal Oxide Sensors and Arrays for Embedded Applications

    Science.gov (United States)

    Lutz, Brent; Wind, Rikard; Kostelecky, Clayton; Routkevitch, Dmitri; Deininger, Debra

    2011-09-01

    Metal oxide semiconductor sensors are widely used as individual sensors and in arrays, and a variety of designs for low power microhotplates have been demonstrated.1 Synkera Technologies has developed an embeddable chemical microsensor platform, based on a unique ceramic MEMS technology, for practical implementation in cell phones and other mobile electronic devices. Key features of this microsensor platform are (1) small size, (2) ultra-low power consumption, (3) high chemical sensitivity, (4) accurate response to a wide-range of threats, and (5) low cost. The sensor platform is enabled by a combination of advances in ceramic micromachining, and precision deposition of sensing films inside the high aspect ratio pores of anodic aluminum oxide (AAO).

  2. Effect of ultra-low dose whole-body-irradiation on severe patients with myasthenia gravis

    International Nuclear Information System (INIS)

    Arimori, Shigeru; Koriyama, Kenji

    1982-01-01

    An ultra-low dose whole body irradiation therapy was given to 5 patients with intractable bulbar syndrome, in a dose of 10 rad/fraction, 2 times a week for 5 weeks, with a total of 100 rad; and effects of this therapy on their clinical symptoms and immunological ability were discussed. In 3 of them, bulbar syndrome was improved, and the other one, the first irradiation was effective. The peripheral leukocyte count and lymphocyte count became lowest immediately after completion of the irradiation, and returned to the normal level within 1 to 2 months. The function of T-cells, especially suppressive T-cells, was recovered; and decrease in B-cells, resulted in a decrease in the AChR antibody titer. (Ueda, J.)

  3. Effect of ultra-low dose whole-body-irradiation on patients with severe myasthenia gravis

    Energy Technology Data Exchange (ETDEWEB)

    Arimori, Shigeru; Koriyama, Kenji (Tokai Univ., Isehara, Kanagawa (Japan). School of Medicine)

    1982-12-01

    An ultra-low dose whole body irradiation therapy was given to 5 patients with intractable bulbar syndrome, in a dose of 10 rad/fraction, 2 times a week for 5 weeks, with a total of 100 rad; and effects of this therapy on their clinical symptoms and immunological ability were discussed. In 3 of them, bulbar syndrome was improved, and the other one, the first irradiation was effective. The peripheral leukocyte count and lymphocyte count became lowest immediately after completion of the irradiation, and returned to the normal level within 1 to 2 months. The function of T-cells, especially suppressive T-cells, was recovered; and decrease in B-cells, resulted in a decrease in the AChR antibody titer.

  4. Localization of Ultra-Low Frequency Waves in Multi-Ion Plasmas of the Planetary Magnetosphere

    Directory of Open Access Journals (Sweden)

    Eun-Hwa Kim

    2015-12-01

    Full Text Available By adopting a 2D time-dependent wave code, we investigate how mode-converted waves at the Ion-Ion Hybrid (IIH resonance and compressional waves propagate in 2D density structures with a wide range of field-aligned wavenumbers to background magnetic fields. The simulation results show that the mode-converted waves have continuous bands across the field line consistent with previous numerical studies. These waves also have harmonic structures in frequency domain and are localized in the field-aligned heavy ion density well. Our results thus emphasize the importance of a field-aligned heavy ion density structure for ultra-low frequency wave propagation, and suggest that IIH waves can be localized in different locations along the field line.

  5. Ultra-low damping in lift-off structured yttrium iron garnet thin films

    Science.gov (United States)

    Krysztofik, A.; Coy, L. E.; Kuświk, P.; Załeski, K.; Głowiński, H.; Dubowik, J.

    2017-11-01

    We show that using maskless photolithography and the lift-off technique, patterned yttrium iron garnet thin films possessing ultra-low Gilbert damping can be accomplished. The films of 70 nm thickness were grown on (001)-oriented gadolinium gallium garnet by means of pulsed laser deposition, and they exhibit high crystalline quality, low surface roughness, and the effective magnetization of 127 emu/cm3. The Gilbert damping parameter is as low as 5 ×10-4. The obtained structures have well-defined sharp edges which along with good structural and magnetic film properties pave a path in the fabrication of high-quality magnonic circuits and oxide-based spintronic devices.

  6. Ultra-low energy Ar+ beam applied for SIMS depth profile analysis of layered nanostructures

    International Nuclear Information System (INIS)

    Konarski, P.; Mierzejewska, A.; Iwanejko, I.

    2001-01-01

    Secondary ion mass spectrometry (SIMS) depth profile analyses of flat layered nanostructures: 10 nm Ta 2 O 3 /Ta and 20 nm (10 x B 4 C/Mo)/Si as well as microparticles of core (illite) - shell (rutile) structure, performed with the use of ultra-low energy ion beam (180-880 eV, Ar + ), are presented. The profiles were obtained using 'mesa' scanning technique and also sample rotation. Depth profile resolution below 1 nanometer was obtained for flat nanostructures. Presented experimental results are compared with Monte Carlo sputtering simulations of analysed structures. A method of finding beam energy, optimal for the best resolution SIMS depth profile analysis, is suggested. (author)

  7. Design and development of novel MRI compatible zirconium- ruthenium alloys with ultralow magnetic susceptibility.

    Science.gov (United States)

    Li, H F; Zhou, F Y; Li, L; Zheng, Y F

    2016-04-19

    In the present study, novel MRI compatible zirconium-ruthenium alloys with ultralow magnetic susceptibility were developed for biomedical and therapeutic devices under MRI diagnostics environments. The results demonstrated that alloying with ruthenium into pure zirconium would significantly increase the strength and hardness properties. The corrosion resistance of zirconium-ruthenium alloys increased significantly. High cell viability could be found and healthy cell morphology observed when culturing MG 63 osteoblast-like cells and L-929 fibroblast cells with zirconium-ruthenium alloys, whereas the hemolysis rates of zirconium-ruthenium alloys are zirconium-ruthenium alloys (1.25 × 10(-6) cm(3)·g(-1)-1.29 × 10(-6) cm(3)·g(-1) for zirconium-ruthenium alloys) are ultralow, about one-third that of Ti-based alloys (Ti-6Al-4V, ~3.5 × 10(-6) cm(3)·g(-1), CP Ti and Ti-6Al-7Nb, ~3.0 × 10(-6) cm(3)·g(-1)), and one-sixth that of Co-Cr alloys (Co-Cr-Mo, ~7.7 × 10(-6) cm(3)·g(-1)). Among the Zr-Ru alloy series, Zr-1Ru demonstrates enhanced mechanical properties, excellent corrosion resistance and cell viability with lowest magnetic susceptibility, and thus is the optimal Zr-Ru alloy system as therapeutic devices under MRI diagnostics environments.

  8. Self-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devices

    KAUST Repository

    Kang, Chen Fang

    2015-04-01

    Resistive random access memory (RRAM) is one of the most promising candidates as a next generation nonvolatile memory (NVM), owing to its superior scalability, low power consumption and high speed. From the materials science point of view, to explore optimal RRAM materials is still essential for practical application. In this work, a new material (Bi, Mn)Ox (BMO) is investigated and several key performance characteristics of Pt/BMO/Pt structured device, including switching performance, retention and endurance, are examined in details. Furthermore, it has been confirmed by high-resolution transmission electron microscopy that the underlying switching mechanism is attributed to formation and disruption of metallic conducting nanofilaments (CNFs). More importantly, the power dissipation for each CNF is as low as 3.8/20fJ for set/reset process, and a realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. These distinctive properties have important implications for understanding switching mechanisms and implementing ultralow power-dissipation RRAM based on BMO. •Self-formed conductive nanofilaments in BMO show ultralow-power memory feature.•The feature of 10nm in diameter and an average 20-30nm spacing of CNFs suggests the compatibility with the current CMOS technologies.•Power dissipation for each CNF is as low as 3.8/20fJ for set/reset process•A realization of cross-bar structure memory cell is demonstrated to prove the downscaling ability of proposed RRAM. © 2015 Elsevier Ltd.

  9. Ultralow-field and spin-locking relaxation dispersion in postmortem pig brain.

    Science.gov (United States)

    Dong, Hui; Hwang, Seong-Min; Wendland, Michael; You, Lixing; Clarke, John; Inglis, Ben

    2017-12-01

    To investigate tissue-specific differences, a quantitative comparison was made between relaxation dispersion in postmortem pig brain measured at ultralow fields (ULF) and spin locking at 7 tesla (T). The goal was to determine whether ULF-MRI has potential advantages for in vivo human brain imaging. Separate specimens of gray matter and white matter were investigated using an ULF-MRI system with superconducting quantum interference device (SQUID) signal detection to measure T1ULF at fields from 58.7 to 235.0 μT and using a commercial MRI scanner to measure T1ρ7T at spin-locking fields from 5.0 to 235.0 μT. At matched field strengths, T1ρ7T is 50 to 100% longer than T1ULF. Furthermore, dispersion in T1ULF is close to linear between 58.7 and 235 µT, whereas dispersion in T1ρ7T is highly nonlinear over the same range. A subtle elbow in the T1ULF dispersion at approximately 140 µT is tentatively attributed to the local dipolar field of macromolecules. It is suggested that different relaxation mechanisms dominate each method and that ULF-MRI has a fundamentally different sensitivity to the macromolecular structure of neural tissue. Ultralow-field MRI may offer distinct, quantitative advantages for human brain imaging, while simultaneously avoiding the severe heating limitation imposed on high-field spin locking. Magn Reson Med 78:2342-2351, 2017. © 2016 International Society for Magnetic Resonance in Medicine. © 2017 International Society for Magnetic Resonance in Medicine.

  10. Ultra-low Pt decorated PdFe Alloy Nanoparticles for Formic Acid Electro-oxidation

    International Nuclear Information System (INIS)

    Zhou, Yawei; Du, Chunyu; Han, Guokang; Gao, Yunzhi; Yin, Geping

    2016-01-01

    Highlights: • A cost-efficient way is used to prepare transition-noble metal alloy nanoparticles. • The Pd 50 Fe 50 /C catalyst shows excellent activity for formic acid oxidation (FAO). • Much activity enhancement of FAO is acquired by ultra-low Pt decorated Pd 50 Fe 50 . • A synergistic mechanism between Pt clusters and PdFe is proposed during the FAO. - Abstract: Palladium (Pd), has demonstrated promising electro-catalytic activity for formic acid oxidation, but suffers from extremely low abundance. Recently alloying with a transition metal has been considered as an effective approach to reducing the loading of Pd and enhancing the activity of Pd-based catalysts simultaneously. Herein, carbon supported PdFe nanoparticles (NPs) are synthesized at room temperature by using sodium borohydride as reducing agent and potassium ferrocyanide as Fe precursor. The Pd 50 Fe 50 alloy sample annealed at 900 °C for 1 h shows the best catalytic activity among Pd x Fe 1-x (x = 0.2, 0.4, 0.5, 0.6, and 0.8) towards formic acid oxidation. To further improve both catalytic activity and stability, the ultra-low Pt (0.09 wt %) decorated Pd 50 Fe 50 NPs (PtPd/PdFe) are prepared via the galvanic replacement reaction. Compared with Pd 50 Fe 50 /C, the PtPd/PdFe/C Exhibits 1.52 times higher catalytic activity and lower onset potential (−0.12 V). The significant enhancements of formic acid oxidation can be attributed to the accelerated dehydrogenation reaction of formic acid by Pt atomic clusters. Moreover, the PtPd/PdFe/C also demonstrates better tolerance to poisons during formic acid oxidation.

  11. Ultra-low fertility in South Korea: The role of the tempo effect

    Directory of Open Access Journals (Sweden)

    Sam Hyun Yoo

    2018-02-01

    Full Text Available Background: The total fertility rate (TFR in South Korea has fallen below 1.3 since 2001. The role of the rapid shift toward a late-childbearing pattern in driving Korean fertility decline to this ultra-low level has been little explored until now. Objective: We provide an in-depth analysis of period fertility trends by birth order in South Korea from 1981 to 2015, when the period TFR fell from 2.57 to extremely low levels. Methods: We combine census and birth registration data to estimate period and cohort fertility indicators by birth order. We compare changes in conventional TFR with tempo- and parity-adjusted total fertility rate (TFRp* and their birth-order-specific components. Results: The tempo effect linked to the shift toward delayed childbearing has had a strong and persistent negative influence on period TFRs in South Korea since the early 1980s. Without the shift to later childbearing, period fertility rates in South Korea would consistently stay higher and decline more gradually, reaching a threshold of very low fertility, 1.5, only in 2014. The postponement of childbearing and the resulting tempo effect were strongest in the early 2000s, when Korean TFR reached the lowest levels. More recently, Korean fertility has been characterized by a diminishing tempo effect and falling first and second birth rates. This trend marks a break with the previous pattern of almost universal fertility and a strong two-child family model. Contribution: Our study demonstrates the importance of the tempo effect in explaining the shift to ultra-low fertility in South Korea and in East Asia

  12. Ultralow dose computed tomography attenuation correction for pediatric PET CT using adaptive statistical iterative reconstruction

    International Nuclear Information System (INIS)

    Brady, Samuel L.; Shulkin, Barry L.

    2015-01-01

    Purpose: To develop ultralow dose computed tomography (CT) attenuation correction (CTAC) acquisition protocols for pediatric positron emission tomography CT (PET CT). Methods: A GE Discovery 690 PET CT hybrid scanner was used to investigate the change to quantitative PET and CT measurements when operated at ultralow doses (10–35 mA s). CT quantitation: noise, low-contrast resolution, and CT numbers for 11 tissue substitutes were analyzed in-phantom. CT quantitation was analyzed to a reduction of 90% volume computed tomography dose index (0.39/3.64; mGy) from baseline. To minimize noise infiltration, 100% adaptive statistical iterative reconstruction (ASiR) was used for CT reconstruction. PET images were reconstructed with the lower-dose CTAC iterations and analyzed for: maximum body weight standardized uptake value (SUV bw ) of various diameter targets (range 8–37 mm), background uniformity, and spatial resolution. Radiation dose and CTAC noise magnitude were compared for 140 patient examinations (76 post-ASiR implementation) to determine relative dose reduction and noise control. Results: CT numbers were constant to within 10% from the nondose reduced CTAC image for 90% dose reduction. No change in SUV bw , background percent uniformity, or spatial resolution for PET images reconstructed with CTAC protocols was found down to 90% dose reduction. Patient population effective dose analysis demonstrated relative CTAC dose reductions between 62% and 86% (3.2/8.3–0.9/6.2). Noise magnitude in dose-reduced patient images increased but was not statistically different from predose-reduced patient images. Conclusions: Using ASiR allowed for aggressive reduction in CT dose with no change in PET reconstructed images while maintaining sufficient image quality for colocalization of hybrid CT anatomy and PET radioisotope uptake

  13. Ultralow dose computed tomography attenuation correction for pediatric PET CT using adaptive statistical iterative reconstruction

    Energy Technology Data Exchange (ETDEWEB)

    Brady, Samuel L., E-mail: samuel.brady@stjude.org [Division of Diagnostic Imaging, St. Jude Children’s Research Hospital, Memphis, Tennessee 38105 (United States); Shulkin, Barry L. [Nuclear Medicine and Department of Radiological Sciences, St. Jude Children’s Research Hospital, Memphis, Tennessee 38105 (United States)

    2015-02-15

    Purpose: To develop ultralow dose computed tomography (CT) attenuation correction (CTAC) acquisition protocols for pediatric positron emission tomography CT (PET CT). Methods: A GE Discovery 690 PET CT hybrid scanner was used to investigate the change to quantitative PET and CT measurements when operated at ultralow doses (10–35 mA s). CT quantitation: noise, low-contrast resolution, and CT numbers for 11 tissue substitutes were analyzed in-phantom. CT quantitation was analyzed to a reduction of 90% volume computed tomography dose index (0.39/3.64; mGy) from baseline. To minimize noise infiltration, 100% adaptive statistical iterative reconstruction (ASiR) was used for CT reconstruction. PET images were reconstructed with the lower-dose CTAC iterations and analyzed for: maximum body weight standardized uptake value (SUV{sub bw}) of various diameter targets (range 8–37 mm), background uniformity, and spatial resolution. Radiation dose and CTAC noise magnitude were compared for 140 patient examinations (76 post-ASiR implementation) to determine relative dose reduction and noise control. Results: CT numbers were constant to within 10% from the nondose reduced CTAC image for 90% dose reduction. No change in SUV{sub bw}, background percent uniformity, or spatial resolution for PET images reconstructed with CTAC protocols was found down to 90% dose reduction. Patient population effective dose analysis demonstrated relative CTAC dose reductions between 62% and 86% (3.2/8.3–0.9/6.2). Noise magnitude in dose-reduced patient images increased but was not statistically different from predose-reduced patient images. Conclusions: Using ASiR allowed for aggressive reduction in CT dose with no change in PET reconstructed images while maintaining sufficient image quality for colocalization of hybrid CT anatomy and PET radioisotope uptake.

  14. Design and development of novel MRI compatible zirconium- ruthenium alloys with ultralow magnetic susceptibility

    Science.gov (United States)

    Li, H.F.; Zhou, F.Y.; Li, L.; Zheng, Y.F.

    2016-01-01

    In the present study, novel MRI compatible zirconium-ruthenium alloys with ultralow magnetic susceptibility were developed for biomedical and therapeutic devices under MRI diagnostics environments. The results demonstrated that alloying with ruthenium into pure zirconium would significantly increase the strength and hardness properties. The corrosion resistance of zirconium-ruthenium alloys increased significantly. High cell viability could be found and healthy cell morphology observed when culturing MG 63 osteoblast-like cells and L-929 fibroblast cells with zirconium-ruthenium alloys, whereas the hemolysis rates of zirconium-ruthenium alloys are alloys and Ti-based alloys, the magnetic susceptibilities of the zirconium-ruthenium alloys (1.25 × 10−6 cm3·g−1–1.29 × 10−6 cm3·g−1 for zirconium-ruthenium alloys) are ultralow, about one-third that of Ti-based alloys (Ti–6Al–4V, ~3.5 × 10−6 cm3·g−1, CP Ti and Ti–6Al–7Nb, ~3.0 × 10−6 cm3·g−1), and one-sixth that of Co–Cr alloys (Co–Cr–Mo, ~7.7 × 10−6 cm3·g−1). Among the Zr–Ru alloy series, Zr–1Ru demonstrates enhanced mechanical properties, excellent corrosion resistance and cell viability with lowest magnetic susceptibility, and thus is the optimal Zr–Ru alloy system as therapeutic devices under MRI diagnostics environments. PMID:27090955

  15. Structure and functionality of bromine doped graphite.

    Science.gov (United States)

    Hamdan, Rashid; Kemper, A F; Cao, Chao; Cheng, H P

    2013-04-28

    First-principles calculations are used to study the enhanced in-plane conductivity observed experimentally in Br-doped graphite, and to study the effect of external stress on the structure and functionality of such systems. The model used in the numerical calculations is that of stage two doped graphite. The band structure near the Fermi surface of the doped systems with different bromine concentrations is compared to that of pure graphite, and the charge transfer between carbon and bromine atoms is analyzed to understand the conductivity change along different high symmetry directions. Our calculations show that, for large interlayer separation between doped graphite layers, bromine is stable in the molecular form (Br2). However, with increased compression (decreased layer-layer separation) Br2 molecules tend to dissociate. While in both forms, bromine is an electron acceptor. The charge exchange between the graphite layers and Br atoms is higher than that with Br2 molecules. Electron transfer to the Br atoms increases the number of hole carriers in the graphite sheets, resulting in an increase of conductivity.

  16. Doping of silicon carbide by ion implantation

    International Nuclear Information System (INIS)

    Gimbert, J.

    1999-01-01

    It appeared that in some fields, as the hostile environments (high temperature or irradiation), the silicon compounds showed limitations resulting from the electrical and mechanical properties. Doping of 4H and 6H silicon carbide by ion implantation is studied from a physicochemical and electrical point of view. It is necessary to obtain n-type and p-type material to realize high power and/or high frequency devices, such as MESFETs and Schottky diodes. First, physical and electrical properties of silicon carbide are presented and the interest of developing a process technology on this material is emphasised. Then, physical characteristics of ion implantation and particularly classical dopant implantation, such as nitrogen, for n-type doping, and aluminium and boron, for p-type doping are described. Results with these dopants are presented and analysed. Optimal conditions are extracted from these experiences so as to obtain a good crystal quality and a surface state allowing device fabrication. Electrical conduction is then described in the 4H and 6H-SiC polytypes. Freezing of free carriers and scattering processes are described. Electrical measurements are carried out using Hall effect on Van der Panw test patterns, and 4 point probe method are used to draw the type of the material, free carrier concentrations, resistivity and mobility of the implanted doped layers. These results are commented and compared to the theoretical analysis. The influence of the technological process on electrical conduction is studied in view of fabricating implanted silicon carbide devices. (author)

  17. Doping dependent room-temperature ferromagnetism and structural properties of dilute magnetic semiconductor ZnO:Cu2+ nanorods

    International Nuclear Information System (INIS)

    Sharma, Prashant K.; Dutta, Ranu K.; Pandey, Avinash C.

    2009-01-01

    Copper doped ZnO nanoparticles were synthesized by the chemical technique based on the hydrothermal method. The crystallite structure, morphology and size were determined by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM) and scanning electron microscopy (SEM) for different doping percentages of Cu 2+ (1-10%). TEM/SEM images showed formation of uniform nanorods, the aspect ratio of which varied with doping percentage of Cu 2+ . The wurtzite structure of ZnO gradually degrades with the increasing Cu 2+ doping concentration and an additional CuO associated diffraction peak was observed above 8% of Cu 2+ doping. The change in magnetic behavior of the nanoparticles of ZnO with varying Cu 2+ doping concentrations was investigated using a vibrating sample magnetometer (VSM). Initially these nanoparticles showed strong room-temperature ferromagnetic behavior, however at higher doping percentage of copper the ferromagnetic behavior was suppressed and paramagnetic nature was enhanced.

  18. Luminescent Solar Concentrators with Fibre Geometry

    NARCIS (Netherlands)

    Edelenbosch, O.Y.; Fisher, M.; Patrignani, L.; Sark, W.G.J.H.M. van; Chatten, A.J.

    2013-01-01

    The potential of a fibre luminescent solar concentrator has been explored by means of both analytical and ray-tracing techniques. Coated fibres have been found to be more efficient than homogeneously doped fibres, at low absorption. For practical fibres concentration is predicted to be linear

  19. Doping process of p-type GaN nanowires: A first principle study

    Science.gov (United States)

    Xia, Sihao; Liu, Lei; Diao, Yu; Feng, Shu

    2017-10-01

    The process of p-type doping for GaN nanowires is investigated using calculations starting from first principles. The influence of different doping elements, sites, types, and concentrations is discussed. Results suggest that Mg is an optimal dopant when compared to Be and Zn due to its stronger stability, whereas Be atoms are more inclined to exist in the interspace of a nanowire. Interstitially-doped GaN nanowires show notable n-type conductivity, and thus, Be is not a suitable dopant, which is to be expected since systems with inner substitutional dopants are more favorable than those with surface substitutions. Both interstitial and substitutional doping affect the atomic structure near dopants and induce charge transfer between the dopants and adjacent atoms. By altering doping sites and concentrations, nanowire atomic structures remain nearly constant. Substitutional doping models show p-type conductivity, and Mg-doped nanowires with doping concentrations of 4% showing the strongest p-type conductivity. All doping configurations are direct bandgap semiconductors. This study is expected to direct the preparation of high-quality GaN nanowires.

  20. Thermal decomposition of potassium metaperiodate doped with trivalent ions

    Energy Technology Data Exchange (ETDEWEB)

    Muraleedharan, K., E-mail: kmuralika@gmail.com [Department of Chemistry, University of Calicut, Calicut, Kerala 673 635 (India); Kannan, M.P.; Gangadevi, T. [Department of Chemistry, University of Calicut, Calicut, Kerala 673 635 (India)

    2010-04-20

    The kinetics of isothermal decomposition of potassium metaperiodate (KIO{sub 4}), doped with phosphate and aluminium has been studied by thermogravimetry (TG). We introduced a custom-made thermobalance that is able to record weight decrease with time under pure isothermal conditions. The decomposition proceeds mainly through two stages: an acceleratory stages up to {alpha} = 0.50 and the decay stage beyond. The decomposition data for aluminium and phosphate doped KIO{sub 4} were found to be best described by the Prout-Tompkins equation. Separate kinetic analyses of the {alpha}-t data corresponding to the acceleratory region and decay region showed that the acceleratory stage gave the best fit with Prout-Tompkins equation itself whereas the decay stage fitted better to the contracting area equation. The rate of decomposition of phosphate doped KIO{sub 4} increases approximately linearly with an increase in the dopant concentration. In the case of aluminium doped KIO{sub 4}, the rate passes through a maximum with increase in the dopant concentration. The {alpha}-t data of pure and doped KIO{sub 4} were also subjected to isoconversional studies for the determination of activation energy values. Doping did not change the activation energy of the reaction. The results favour an electron-transfer mechanism for the isothermal decomposition of KIO{sub 4}, agreeing well with our earlier observations.

  1. Flat Ge-doped optical fibres for food irradiation dosimetry

    International Nuclear Information System (INIS)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-01-01

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%

  2. Flat Ge-doped optical fibres for food irradiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Noor, N. Mohd; Jusoh, M. A. [Department of Imaging, Faculty of Medicine and Health Sciences, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Razis, A. F. Abdull [Food Safety Research Centre, Faculty of Food Science and Technology, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Laboratory of UPM-MAKNA Cancer Research, Institute of Bioscience, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Alawiah, A. [Faculty of Engineering and Technology, Multimedia University, 75450 Malacca (Malaysia); Bradley, D. A. [Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom); Department of Physics, University of Malaya, 50603 Kuala Lumpur (Malaysia)

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  3. Synthesis and characterization of hydroxyapatite-doped silver nanoparticles

    International Nuclear Information System (INIS)

    Andrade, Flavio Augusto Cavadas da Silva; Rollo, Joao Manuel Domingos de Almeida; Rigo, Eliana Cristina da Silva; Vercik, Andres; Vercik, Luci Cristina de Oliveira; Valencia, German Ayala; Ferreira, Leticcia Gaviao

    2012-01-01

    Hydroxyapatite-doped silver nanoparticles was obtained by immersing the powder in increasing dilutions of a solution containing AGNPS which were synthesized in different times and were characterized by UV-vis spectroscopy. The X-ray diffraction (XRD)studies demonstrate no change in the major phase of HA. Scanning Electron Microscopy (SEM) revealed morphological characteristics of powders after doping and the presence of silver was confirmed by energy dispersive X-ray (EDAX) analysis.The antibacterial effect of the doped powders was evaluated using strain of Staphylococcus aureus by disc-diffusion test. The zone of inhibition was found to vary with the amount of silver nanoparticle in the doped powder even for low concentrations of AgNPs. These results indicate that the method of immersion hydroxyapatite in solutions containing AgNPs is promising to obtain bioactive materials with low cytotoxicity and antibacterial effects. (author)

  4. Role of nitrogen vacancies in cerium doped aluminum nitride

    International Nuclear Information System (INIS)

    Majid, Abdul; Asghar, Farzana; Rana, Usman Ali; Ud-Din Khan, Salah; Yoshiya, Masato; Hussain, Fayyaz; Ahmad, Iftikhar

    2016-01-01

    In this report, a systematic density functional theory based investigation to explain the character of nitrogen vacancies in structural, electronic and magnetic properties of Ce doped wurtzite AlN is presented. The work demonstrates the modification in the properties of the material upon doping thereby addressing dopant concentration and inter-dopant distance. The presence of anionic vacancy reveals spin polarization and introduction of magnetic character in the structure. The doping produced the magnetic character in the material which was of ferromagnetic nature in most cases except the situation when dopants separated by largest distance of 5.873 Å. The calculated values of total energy and exchange energy suggested the configuration including Ce Al –V N complex is more favorable and exhibits ferromagnetic ordering. - Highlights: • Ce doped AlN with and without nitrogen vacancy. • Dopant at nearest neighbor site introduce ferromagnetism. • Ce Al –V N complex is favorable in Ce:AlN.

  5. Synthesis and Characterization of Molybdenum Doped ZnO Thin Films by SILAR Deposition Method

    Science.gov (United States)

    Radha, R.; Sakthivelu, A.; Pradhabhan, D.

    2016-08-01

    Molybdenum (Mo) doped zinc oxide (ZnO) thin films were deposited on the glass substrate by Successive Ionic Layer Adsorption and Reaction (SILAR) deposition method. The effect of Mo dopant concentration of 5, 6.6 and 10 mol% on the structural, morphological, optical and electrical properties of n-type Mo doped ZnO films was studied. The X-ray diffraction (XRD) results confirmed that the Mo doped ZnO thin films were polycrystalline with wurtzite structure. The field emission scanning electron microscopy (FESEM) studies shows that the surface morphology of the films changes with Mo doping. A blue shift of the optical band gap was observed in the optical studies. Effect of Mo dopant concentration on electrical conductivity was studied and it shows comparatively high electrical conductivity at 10 mol% of Mo doping concentration.

  6. Mechanical niobium doping in barium titanate electroceramics

    Energy Technology Data Exchange (ETDEWEB)

    Velasco-Davalos, I.A., E-mail: ivan.velascodavalos@gmail.com [Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional, Zacatenco, 07338 México D.F. (Mexico); INRS-EMT, 1650 Boul. Lionel-Boulet, Varennes J3X 1S2 (Canada); Ruediger, A. [INRS-EMT, 1650 Boul. Lionel-Boulet, Varennes J3X 1S2 (Canada); Cruz-Rivera, J.J. [Universidad Autónoma de San Luis Potosí, Av. Sierra Leona 550, Lomas, 78210 S.L.P. (Mexico); Gomez-Yanez, C. [Departmento de Ingeniería Metalúrgica, Instituto Politécnico Nacional, Zacatenco, 07338 México D.F. (Mexico)

    2013-12-25

    Highlights: •We demonstrate a new doping procedure by Mechanical Alloying (MA). •For small dopant concentrations, charge compensation of Nb is primarily attributed to free electrons. •At higher Nb concentrations cation vacancies prevail as compensation mechanism. -- Abstract: Niobium is a well-established donor dopant for semi-conducting BaTiO{sub 3} ceramics. The conventional procedure to dissolve Nb into BaTiO{sub 3} relies on thermal activation at high temperatures (up to 1500 °C) and even then, large dwell times are necessary due to the small diffusion coefficients of Nb{sup 5+}. In this work, we demonstrate a new doping procedure by Mechanical Alloying (MA), which has already proven its potential for the fabrication of conductive electroceramics. In a planetary mill, powders of BaTiO{sub 3} and Nb{sub 2}O{sub 5} were mixed for up to 540 min. The BaTiO{sub 3} unit cell volume increases with increasing Nb concentration. The electrical properties of conventional and mechanical alloyed samples as a function of Nb concentration are similar, however the mechanically alloyed samples shows a large conductivity that we attribute to a better homogeneity in the structure of MA-processed samples. For small dopant concentrations, charge compensation of the pentavalent Nb is primarily attributed to free electrons. At higher Nb concentrations cation vacancies prevail as compensation mechanism.

  7. Performance of ultralow-dose CT with iterative reconstruction in lung cancer screening: limiting radiation exposure to the equivalent of conventional chest X-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Huber, Adrian [University Hospital Inselspital Bern, Department of Diagnostic, Interventional and Paediatric Radiology, Bern (Switzerland); University Hospital Pitie-Salpetriere, Department of Polyvalent and Oncological Radiology, Paris (France); Landau, Julia; Buetikofer, Yanik; Leidolt, Lars; Brela, Barbara; May, Michelle; Heverhagen, Johannes; Christe, Andreas [University Hospital Inselspital Bern, Department of Diagnostic, Interventional and Paediatric Radiology, Bern (Switzerland); Ebner, Lukas [University Hospital Inselspital Bern, Department of Diagnostic, Interventional and Paediatric Radiology, Bern (Switzerland); Duke University Medical Center, Department of Radiology, Durham, NC (United States)

    2016-10-15

    To investigate the detection rate of pulmonary nodules in ultralow-dose CT acquisitions. In this lung phantom study, 232 nodules (115 solid, 117 ground-glass) of different sizes were randomly distributed in a lung phantom in 60 different arrangements. Every arrangement was acquired once with standard radiation dose (100 kVp, 100 references mAs) and once with ultralow radiation dose (80 kVp, 6 mAs). Iterative reconstruction was used with optimized kernels: I30 for ultralow-dose, I70 for standard dose and I50 for CAD. Six radiologists examined the axial 1-mm stack for solid and ground-glass nodules. During a second and third step, three radiologists used maximum intensity projection (MIPs), finally checking with computer-assisted detection (CAD), while the others first used CAD, finally checking with the MIPs. The detection rate was 95.5 % with standard dose (DLP 126 mGy*cm) and 93.3 % with ultralow-dose (DLP: 9 mGy*cm). The additional use of either MIP reconstructions or CAD software could compensate for this difference. A combination of both MIP reconstructions and CAD software resulted in a maximum detection rate of 97.5 % with ultralow-dose. Lung cancer screening with ultralow-dose CT using the same radiation dose as a conventional chest X-ray is feasible. (orig.)

  8. Ultralow dose CT for pulmonary nodule detection with chest X-ray equivalent dose - a prospective intra-individual comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Messerli, Michael [University Zurich, Department of Nuclear Medicine, University Hospital Zurich, Zurich (Switzerland); Cantonal Hospital St. Gallen, Division of Radiology and Nuclear Medicine, St. Gallen (Switzerland); Kluckert, Thomas; Knitel, Meinhard; Desbiolles, Lotus; Bauer, Ralf W.; Wildermuth, Simon [Cantonal Hospital St. Gallen, Division of Radiology and Nuclear Medicine, St. Gallen (Switzerland); Waelti, Stephan [Cantonal Hospital St. Gallen, Division of Radiology and Nuclear Medicine, St. Gallen (Switzerland); University of Montreal, Department of Radiology, CHU Sainte-Justine, Montreal, Quebec (Canada); Rengier, Fabian [University Hospital Heidelberg, Department of Diagnostic and Interventional Radiology, Heidelberg (Germany); Warschkow, Rene [Cantonal Hospital St. Gallen, Department of Surgery, St. Gallen (Switzerland); Alkadhi, Hatem [University Zurich, Institute of Diagnostic and Interventional Radiology, University Hospital Zurich, Zurich (Switzerland); Leschka, Sebastian [Cantonal Hospital St. Gallen, Division of Radiology and Nuclear Medicine, St. Gallen (Switzerland); University Zurich, Institute of Diagnostic and Interventional Radiology, University Hospital Zurich, Zurich (Switzerland)

    2017-08-15

    To prospectively evaluate the accuracy of ultralow radiation dose CT of the chest with tin filtration at 100 kV for pulmonary nodule detection. 202 consecutive patients undergoing clinically indicated chest CT (standard dose, 1.8 ± 0.7 mSv) were prospectively included and additionally scanned with an ultralow dose protocol (0.13 ± 0.01 mSv). Standard dose CT was read in consensus by two board-certified radiologists to determine the presence of lung nodules and served as standard of reference (SOR). Two radiologists assessed the presence of lung nodules and their locations on ultralow dose CT. Sensitivity and specificity of the ultralow dose protocol was compared against the SOR, including subgroup analyses of different nodule sizes and types. A mixed effects logistic regression was used to test for independent predictors for sensitivity of pulmonary nodule detection. 425 nodules (mean diameter 3.7 ± 2.9 mm) were found on SOR. Overall sensitivity for nodule detection by ultralow dose CT was 91%. In multivariate analysis, nodule type, size and patients BMI were independent predictors for sensitivity (p < 0.001). Ultralow dose chest CT at 100 kV with spectral shaping enables a high sensitivity for the detection of pulmonary nodules at exposure levels comparable to plain film chest X-ray. (orig.)

  9. Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

    Science.gov (United States)

    Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

    2017-12-01

    Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

  10. Microstructural and photoluminescence properties of sol–gel derived Tb3+ doped ZnO nanocrystals

    CSIR Research Space (South Africa)

    Kabongo, GL

    2014-04-01

    Full Text Available Un-doped and Tb(Sup3+) doped ZnO nanocrystals with different concentrations of Tb(Sup3+) were synthesized by a sol–gel method and their photoluminescence (PL) properties were investigated. The successful incorporation of Tb(sup3+) ions...

  11. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    International Nuclear Information System (INIS)

    Kwang-Ohk Cheon

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance

  12. An epitaxial transparent conducting perovskite oxide: double-doped SrTiO3

    NARCIS (Netherlands)

    Ravichandran, Jayakanth; Siemons, W.; Heijmerikx, Herman; Huijben, Mark; Majumdar, Arun; Ramesh, Ramamoorthy

    2010-01-01

    Epitaxial thin films of strontium titanate doped with different concentrations of lanthanum and oxygen vacancies were grown on LSAT substrates by pulsed laser deposition technique. Films grown with 5−15% La doping and a critical growth pressure of 1−10 mTorr showed high transparency (>70−95%) in the

  13. Influence of neodymium-doping on structure and properties of yttrium aluminium garnet

    DEFF Research Database (Denmark)

    Zhang, X.D.; He, W.; Yue, Yuanzheng

    2013-01-01

    We study the impact of the Nd-doping on the grain formation, the crystal structure, and the fluorescence of the Yttrium Aluminum Garnet (YAG). The results show that Nd-doping leads to the YAG lattice expansion and distortion, and hence to an increase in defect concentration. This is attributed to...

  14. The Electric and Optical Properties of Doped Small Molecular Organic Light-Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Cheon, Kwang-Ohk [Iowa State Univ., Ames, IA (United States)

    2003-01-01

    Organic light-emitting devices (OLEDs) constitute a new and exciting emissive display technology. In general, the basic OLED structure consists of a stack of fluorescent organic layers sandwiched between a transparent conducting-anode and metallic cathode. When an appropriate bias is applied to the device, holes are injected from the anode and electrons from the cathode; some of the recombination events between the holes and electrons result in electroluminescence (EL). Until now, most of the efforts in developing OLEDs have focused on display applications, hence on devices within the visible range. However some organic devices have been developed for ultraviolet or infrared emission. Various aspects of the device physics of doped small molecular OLEDs were described and discussed. The doping layer thickness and concentration were varied systematically to study their effects on device performances, energy transfer, and turn-off dynamics. Low-energy-gap DCM2 guest molecules, in either α-NPD or DPVBi host layers, are optically efficient fluorophores but also generate deep carrier trap-sites. Since their traps reduce the carrier mobility, the current density decreases with increased doping concentration. At the same time, due to efficient energy transfer, the quantum efficiency of the devices is improved by light doping or thin doping thickness, in comparison with the undoped neat devices. However, heavy doping induces concentration quenching effects. Thus, the doping concentration and doping thickness may be optimized for best performance.

  15. Electronic structure of B-doped diamond: A first-principles study

    Directory of Open Access Journals (Sweden)

    T. Oguchi

    2006-01-01

    Full Text Available Electronic structure of B-doped diamond is studied based on first-principles calculations with supercell models for substitutional and interstitial doping at 1.5–3.1 at.% B concentrations. Substitutional doping induces holes around the valence-band maximum in a rigid-band fashion. The nearest neighbor C site to B shows a large energy shift of 1s core state, which may explain reasonably experimental features in recent photoemission and X-ray absorption spectra. Doping at interstitial Td site is found to be unstable compared with that at the substitutional site

  16. Hydrothermal synthesis of Fe-doped TiO2 nanostructure photocatalyst

    International Nuclear Information System (INIS)

    Nguyen, Van Nghia; Nguyen, Ngoc Khoa Truong; Nguyen, Phi Hung

    2011-01-01

    Fe-doped TiO 2 catalyst was prepared by the hydrothermal method. The resulting nanopowders were characterized by x-ray diffraction, transmission electron microscopy and Raman and UV-visible spectroscopies. The photocatalytic activity of the Fe-doped TiO 2 was tested by decomposition of methylene orange with a concentration of 10 mg l −1 in aqueous solution. The obtained results showed that methylene orange was significantly degraded after irradiation for 90 min under a halogen lamp and sunlight. The doping effect on the photocatalytic activity of the iron-doped catalyst samples are discussed

  17. Characterization of a gamma radiation dosimeter based of glass doped with copper

    International Nuclear Information System (INIS)

    Laameri, Mohamed Hadi; Ben Mansour, Issam

    2010-01-01

    Commercial sodo-calcic silicate glass was studied by thermo luminescence in order to evaluate its potential like material sensitive to the gamma radiation for dosimetric application. We have examined in particular the effect of doping glass copper ion exchange C U-N A for different concentrations technique and multiple conditions of doping on luminescent thermo sensitivity on a very wide range of doses ranging from 10 mGy up to 100 kGy. We have also tried to explain the origin of thermoluminescence observed by exploiting the doped and non-doped samples EPR spectra.

  18. Scintillation and radiation damage of doped BaF2 crystals

    International Nuclear Information System (INIS)

    Gong Zufang; Xu Zizong; Chang Jin

    1992-01-01

    The emission spectra and the radiation damage of BaF 2 crystals doped Ce and Dy have been studied. The results indicate that the doped BaF 2 crystals have the intrinsic spectra of impurity besides the intrinsic spectra of BaF 2 crystals. The crystals colored and the transmissions decrease with the concentration of impurity in BaF 2 crystals after radiation by γ-ray of 60 Co. The doped Ce BaF 2 irradiated by ultraviolet has faster recover of transmissions but for doped Dy the effect is not obvious. The radiation resistance is not good as pure BaF 2 crystals

  19. Positron annihilation spectroscopy in doped p-type ZnO

    Science.gov (United States)

    Majumdar, Sayanee; Sanyal, D.

    2011-07-01

    Positron annihilation lifetime (PAL) spectroscopy has been used to investigate the vacancy type defect of the Li and N doped ZnO. The mono-vacancies, shallow -vacancies and open volume defects have been found in both the Li and N doped ZnO. The mono-vacancies, shallow-vacancies and open volume defects increase in N-doped ZnO as the size of N is quite high compared to Li. Positron annihilation study showed that the doping above 1-3% Li and 3-4% N in ZnO are not required in order to achieve low resistivity, high hole concentration and good mobility.

  20. Exploiting the natural doping gradient of Nd:YLF crystals for high-power end pumped lasers

    CSIR Research Space (South Africa)

    Bollig, C

    2008-01-01

    Full Text Available decided to use crystals of a doping concentration below the 0.5% previously used. In addition, researchers decided to exploit the natural doping gradient along the length of the boule, which is especially pronounced at low concentrations but commonly...

  1. Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

    KAUST Repository

    Zhang, Bo

    2017-05-22

    Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

  2. BLOOD DOPING AND RISKS

    Directory of Open Access Journals (Sweden)

    Goran Vasić

    2015-05-01

    Full Text Available Doping is the way in which athletes misuse of chemicals and other types of medical interventions (eg, blood replacement, try to get ahead in the results of other athletes or their performance at the expense of their own health. The aim of this work is the analysis of blood doping and the display of negative consequences that this way of increasing capabilities brings. Method: The methodological work is done descriptively. Results: Even in 1972 at the Stockholm Institute for gymnastics and sport, first Dr. Bjorn Ekblom started having blood doping. Taken from the blood, athletes through centifuge separating red blood cells from blood plasma, which is after a month of storage in the fridge, every athlete back into the bloodstream. Tests aerobic capacity thereafter showed that the concerned athletes can run longer on average for 25% of the treadmill than before. Discussion: Blood doping carries with it serious risks, excessive amount of red cells “thickens the blood,” increased hematocrit, which reduces the heart’s ability to pump blood to the periphery. All this makes it difficult for blood to flow through blood vessels, and there is a great danger that comes to a halt in the circulation, which can cause cardiac arrest, stroke, pulmonary edema, and other complications that can be fatal.

  3. Doped barium titanate nanoparticles

    Indian Academy of Sciences (India)

    Wintec

    nese doped BaTiO3 ceramics, sintered at 1400°C in air, changes from tetragonal to hexagonal between 0⋅5 and. 1⋅7 mole% of manganese (Langhammer et al 2000). As a driving force of the transformation from the cubic to the hexagonal crystal structure, the influence of the Jahn–. Teller distortion is proposed. The grain ...

  4. Ultra-Low Inductance Design for a GaN HEMT Based 3L-ANPC Inverter

    DEFF Research Database (Denmark)

    Gurpinar, Emre; Castellazzi, Alberto; Iannuzzo, Francesco

    2016-01-01

    contributors to voltage overshoots and increase of switching losses, are discussed. The ultra-low inductance power cell design based on a four layer PCB with the aim to maximise the switching performance of GaN HEMTs is explained. Gate driver design for GaN HEMT devices is presented. Common-mode behaviours......In this paper, an ultra-low inductance power cell design for a 3L-ANPC based on 650 V GaN HEMT devices is presented. The 3L-ANPC topology with GaN HEMT devices and the selected modulation scheme suitable for wide-bandgap (WBG) devices are presented. The commutation loops, which are the main...

  5. Ultra-low power anti-crosstalk collision avoidance light detection and ranging using chaotic pulse position modulation approach

    International Nuclear Information System (INIS)

    Hao Jie; Gong Ma-li; Du Peng-fei; Lu Bao-jie; Zhang Fan; Zhang Hai-tao; Fu Xing

    2016-01-01

    A novel concept of collision avoidance single-photon light detection and ranging (LIDAR) for vehicles has been demonstrated, in which chaotic pulse position modulation is applied on the transmitted laser pulses for robust anti-crosstalk purposes. Besides, single-photon detectors (SPD) and time correlated single photon counting techniques are adapted, to sense the ultra-low power used for the consideration of compact structure and eye safety. Parameters including pulse rate, discrimination threshold, and number of accumulated pulses have been thoroughly analyzed based on the detection requirements, resulting in specified receiver operating characteristics curves. Both simulation and indoor experiments were performed to verify the excellent anti-crosstalk capability of the presented collision avoidance LIDAR despite ultra-low transmitting power. (paper)

  6. Push-back technique facilitates ultra-low anterior resection without nerve injury in total mesorectal excision for rectal cancer.

    Science.gov (United States)

    Inoue, Yasuhiro; Hiro, Junichiro; Toiyama, Yuji; Tanaka, Koji; Uchida, Keiichi; Miki, Chikao; Kusunoki, Masato

    2011-01-01

    To describe our push-back approach to ultra-low anterior resection using the concept of the mucosal stump. We mobilize the rectum using an abdominal approach, and perform mucosal cutting circumferentially at the dentate line. The mucosal stump is closed, and the internal sphincteric muscle resected partially or totally according to tumor location. Perianal dissection is performed along the medial plane of the external sphincteric muscles, and the hiatal ligament is dissected posteriorly. To resect the entire rectum, the closed rectal stump is pushed back to the abdominal cavity using composed gauze. This prevents injury to the autonomic nerve. We performed colonic J-pouch anal anastomosis using our mucosal stump approach in 58 patients with rectal cancer located push-back approach for internal sphincter resection produces satisfactory functional and oncological results in ultra-low anterior rectal cancer. Copyright © 2011 S. Karger AG, Basel.

  7. [Electric traction magnetic fields of ultra-low frequency as an occupational risk factor of ischemic heart disease].

    Science.gov (United States)

    Ptitsyna, N G; Kudrin, V A; Villorezi, D; Kopytenko, Iu A; Tiasto, M I; Kopytenko, E A; Bochko, V A; Iuchchi, N

    1996-01-01

    The study was inspired by earlier results that displayed influence of variable natural geomagnetic field (0.005-10 Hz range-ultra-low frequencies) on circulatory system, indicated possible correlation between industrial ultra-low frequency fields and prevalence of myocardial infarction. The authors conducted unique measurements of ultra-low frequency fields produced by electric engines. The results were compared with data on morbidity among railway transport workers. The findings are that level of magnetic variations in electric locomotive cabin can exceed 280 micro Tesla, whereas that in car sections reaches 50 micro Tesla. Occurrence of coronary heart disease among the locomotive operators appeared to be 2.0 + 0.2 times higher than that among the car section operators. Higher risk of coronary heart disease in the locomotive operators is associated with their increased occupational magnetic load.

  8. Ultra-low microcurrent in the management of diabetes mellitus, hypertension and chronic wounds: Report of twelve cases and discussion of mechanism of action

    Science.gov (United States)

    Lee, Bok Y.; AL-Waili, Noori; Stubbs, Dean; Wendell, Keith; Butler, Glenn; AL-Waili, Thia; AL-Waili, Ali

    2010-01-01

    Oxidative stress plays a major role in the pathogenesis of both types of diabetes mellitus and cardiovascular diseases including hypertension. The low levels of antioxidants accompanied by raised levels of markers of free radical damage play a major role in delaying wound healing. Ultra-low microcurrent presumably has an antioxidant effect, and it was shown to accelerate wound healing. The purpose of the study is to investigate the efficacy of ultra-low microcurrent delivered by the Electro Pressure Regeneration Therapy (EPRT) device (EPRT Technologies-USA, Simi Valley, CA) in the management of diabetes, hypertension and chronic wounds. The EPRT device is an electrical device that sends a pulsating stream of electrons in a relatively low concentration throughout the body. The device is noninvasive and delivers electrical currents that mimic the endogenous electric energy of the human body. It is a rechargeable battery-operated device that delivers a direct current (maximum of 3 milliAmperes) of one polarity for 11.5 minutes, which then switched to the opposite polarity for another 11.5 minutes. The resulting cycle time is approximately 23min or 0.000732 Hz and delivers a square wave bipolar current with a voltage ranging from 5V up to a maximum of 40 V. The device produces a current range of 3 mA down to 100 nA. Twelve patients with long standing diabetes, hypertension and unhealed wounds were treated with EPRT. The patients were treated approximately for 3.5 h/day/5 days a week. Assessment of ulcer was based on scale used by National Pressure Ulcer Advisory Panel Consensus Development Conference. Patients were followed-up with daily measurement of blood pressure and blood glucose level, and their requirement for medications was recorded. Treatment continued from 2-4 months according to their response. Results showed that diabetes mellitus and hypertension were well controlled after using this device, and their wounds were markedly healed (30-100%). The patients

  9. Electronic and magnetic properties of SnS2 monolayer doped with non-magnetic elements

    Science.gov (United States)

    Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Wang, Ling-Ling

    2018-05-01

    We performed a systematic study of the electronic structures and magnetic properties of SnS2 monolayer doped with non-magnetic elements in groups IA, IIA and IIIA based on the first-principles methods. The doped systems exhibit half-metallic and metallic natures depending on the doping elements. The formation of magnetic moment is attributable to the cooperative effect of the Hund's rule coupling and hole concentration. The spin polarization can be stabilized and enhanced through confining the delocalized impurity states by biaxial tensile strain in hole-doped SnS2 monolayer. Both the double-exchange and p-p exchange mechanisms are simultaneously responsible for the ferromagnetic ground state in those hole-doped materials. Our results demonstrate that spin polarization can be induced and controlled in SnS2 monolayers by non-magnetic doping and tensile strain.

  10. Fe/Co doped molybdenum diselenide: a promising two-dimensional intermediate-band photovoltaic material

    International Nuclear Information System (INIS)

    Zhang, Jiajia; He, Haiyan; Pan, Bicai

    2015-01-01

    An intermediate-band (IB) photovoltaic material is an important candidate in developing the new-generation solar cell. In this paper, we propose that the Fe-doped or the Co-doped MoSe 2 just meets the required features in IB photovoltaic materials. Our calculations demonstrate that when the concentration of the doped element reaches 11.11%, the doped MoSe 2 shows a high absorptivity for both infrared and visible light, where the photovoltaic efficiency of the doped MoSe 2 is as high as 56%, approaching the upper limit of photovoltaic efficiency of IB materials. So, the Fe- or Co-doped MoSe 2 is a promising two-dimensional photovoltaic material. (paper)

  11. Doping optimization of polypyrrole with toluenesulfonic acid using Box-Behnken design

    International Nuclear Information System (INIS)

    Syed Draman, Sarifah Fauziah; Daik, Rusli; El-Sheikh, Said M.; Latif, Famiza Abdul

    2013-01-01

    A three-level Box-Behnken design was employed in doping optimization of polypyrrole with toluenesulfonic acid (TSA-doped PPy). The material was synthesized via chemical oxidative polymerization using pyrrole, toluenesulfonic acid (TSA) and ammonium persulfate (APS) as monomer, dopant and oxidant, respectively. The critical factors selected for this study were concentration of dopant, molar ratio between dopant to monomer (pyrrole) and concentration of oxidant. Obtaining adequate doping level of TSA-doped PPy is crucial because it affects the charge carriers for doped PPy and usually be responsible for electronic mobility along polymeric chain. Furthermore, the doping level also affects other properties such as electrical and thermal conductivity. Doping level was calculated using elemental analysis. SEM images shows that the prepared TSA-doped PPy particles are spherical in shape with the diameters of about. The range of nanoparticles size is around 80-100 nm. The statistical analysis based on a Box–Behnken design showed that 0.01 mol of TSA, 1:1 mole ratio TSA to pyrrole and 0.25 M APS were the optimum conditions for sufficient doping level

  12. Doping optimization of polypyrrole with toluenesulfonic acid using Box-Behnken design

    Energy Technology Data Exchange (ETDEWEB)

    Syed Draman, Sarifah Fauziah; Daik, Rusli [School of Chemical Sciences and Food Technology, Faculty of Science and Technology, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); El-Sheikh, Said M. [Nanostructured Materials and Nanotechnology Division, Central Metallurgical Research and Development Institute,11421 Cairo (Egypt); Latif, Famiza Abdul [Faculty of Applied Sciences, Universiti Teknologi MARA Malaysia 40450 Shah Alam, Selangor (Malaysia)

    2013-11-27

    A three-level Box-Behnken design was employed in doping optimization of polypyrrole with toluenesulfonic acid (TSA-doped PPy). The material was synthesized via chemical oxidative polymerization using pyrrole, toluenesulfonic acid (TSA) and ammonium persulfate (APS) as monomer, dopant and oxidant, respectively. The critical factors selected for this study were concentration of dopant, molar ratio between dopant to monomer (pyrrole) and concentration of oxidant. Obtaining adequate doping level of TSA-doped PPy is crucial because it affects the charge carriers for doped PPy and usually be responsible for electronic mobility along polymeric chain. Furthermore, the doping level also affects other properties such as electrical and thermal conductivity. Doping level was calculated using elemental analysis. SEM images shows that the prepared TSA-doped PPy particles are spherical in shape with the diameters of about. The range of nanoparticles size is around 80-100 nm. The statistical analysis based on a Box–Behnken design showed that 0.01 mol of TSA, 1:1 mole ratio TSA to pyrrole and 0.25 M APS were the optimum conditions for sufficient doping level.

  13. Sensitivity of LDEF foil analyses using ultra-low background germanium vs. large NaI(Tl) multidimensional spectrometers

    International Nuclear Information System (INIS)

    Reeves, J.H.; Arthur, R.J.; Brodzinski, R.L.

    1992-06-01

    Cobalt foils and stainless steel samples were analyzed for induced 6O Co activity with both an ultra-low background germanium gamma-ray spectrometer and with a large NaI(Tl) multidimensional spectrometer, both of which use electronic anticoincidence shielding to reduce background counts resulting from cosmic rays. Aluminum samples were analyzed for 22 Na. The results, in addition to the relative sensitivities and precisions afforded by the two methods, are presented

  14. Concentration-dependent photoluminescence of Te-doped In{sub 0.14}Ga{sub 0.86}As{sub 0.13}Sb{sub 0.87}

    Energy Technology Data Exchange (ETDEWEB)

    Diaz-Reyes, J [CIBA-IPN, Ex-Hacienda de San Juan Molino Km 1.5, Tepetitla, Tlaxcala 90700 (Mexico); Mendoza-Alvarez, J G [Departamento de Fisica, CINVESTAV-IPN, Apartado Postal 14-740, Mexico, DF 07000 (Mexico); Gomez-Herrera, M L [CICATA-IPN, Unidad Legaria, Avenida Legaria 694, Colonia Irrigacion, Mexico, DF 11500 (Mexico)

    2006-12-06

    Quaternary layers of N-type In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} were grown by liquid phase epitaxy on (100) GaSb substrates under lattice-matching conditions. Low-temperature photoluminescence spectra were obtained as a function of tellurium concentration. These spectra were interpreted taking into account the nonparabolicity of the conduction band. Calculations of the peak position and photoluminescence transitions were performed. Both the band filled as well as band tailing effects due to Coulomb interaction of free carriers with ionized impurities and shrinkage due to exchange interaction between free carriers were considered in order to properly account for the observed features of the photoluminescence spectra. It is shown that the band-to-band energy transition can be used to obtain the carrier concentration in N-type In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y}, in the range from 1 x 10{sup 16} to 3.42 x 10{sup 18} cm{sup -3}.

  15. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.

    2017-03-10

    Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

  16. Versatile, ultra-low sample volume gas analyzer using a rapid, broad-tuning ECQCL and a hollow fiber gas cell

    Science.gov (United States)

    Kriesel, Jason M.; Makarem, Camille N.; Phillips, Mark C.; Moran, James J.; Coleman, Max L.; Christensen, Lance E.; Kelly, James F.

    2017-05-01

    We describe a versatile mid-infrared (Mid-IR) spectroscopy system developed to measure the concentration of a wide range of gases with an ultra-low sample size. The system combines a rapidly-swept external cavity quantum cascade laser (ECQCL) with a hollow fiber gas cell. The ECQCL has sufficient spectral resolution and reproducibility to measure gases with narrow features (e.g., water, methane, ammonia, etc.), and also the spectral tuning range needed to measure volatile organic compounds (VOCs), (e.g., aldehydes, ketones, hydrocarbons), sulfur compounds, chlorine compounds, etc. The hollow fiber is a capillary tube having an internal reflective coating optimized for transmitting the Mid-IR laser beam to a detector. Sample gas introduced into the fiber (e.g., internal volume = 0.6 ml) interacts strongly with the laser beam, and despite relatively modest path lengths (e.g., L 3 m), the requisite quantity of sample needed for sensitive measurements can be significantly less than what is required using conventional IR laser spectroscopy systems. Example measurements are presented including quantification of VOCs relevant for human breath analysis with a sensitivity of 2 picomoles at a 1 Hz data rate.

  17. Versatile, ultra-low sample volume gas analyzer using a rapid, broad-tuning ECQCL and a hollow fiber gas cell

    Energy Technology Data Exchange (ETDEWEB)

    Kriesel, Jason M.; Makarem, Camille N.; Phillips, Mark C.; Moran, James J.; Coleman, Max; Christensen, Lance; Kelly, James F.

    2017-05-05

    We describe a versatile mid-infrared (Mid-IR) spectroscopy system developed to measure the concentration of a wide range of gases with an ultra-low sample size. The system combines a rapidly-swept external cavity quantum cascade laser (ECQCL) with a hollow fiber gas cell. The ECQCL has sufficient spectral resolution and reproducibility to measure gases with narrow features (e.g., water, methane, ammonia, etc.), and also the spectral tuning range needed to measure volatile organic compounds (VOCs), (e.g., aldehydes, ketones, hydrocarbons), sulfur compounds, chlorine compounds, etc. The hollow fiber is a capillary tube having an internal reflective coating optimized for transmitting the Mid-IR laser beam to a detector. Sample gas introduced into the fiber (e.g., internal volume = 0.6 ml) interacts strongly with the laser beam, and despite relatively modest path lengths (e.g., L ~ 3 m), the requisite quantity of sample needed for sensitive measurements can be significantly less than what is required using conventional IR laser spectroscopy systems. Example measurements are presented including quantification of VOCs relevant for human breath analysis with a sensitivity of ~2 picomoles at a 1 Hz data rate.

  18. Dielectric, thermal and mechanical properties of ADP doped PVA composites

    Science.gov (United States)

    Naik, Jagadish; Bhajantri, R. F.; Ravindrachary, V.; Rathod, Sunil G.; Sheela, T.; Naik, Ishwar

    2015-06-01

    Polymer composites of poly(vinyl alcohol) (PVA), doped with different concentrations of ammonium dihydrogen phosphate (ADP) has been prepared by solution casting. The formation of complexation between ADP and PVA was confirmed with the help of Fourier transforms infrared (FTIR) spectroscopy. Thermogravimetric analysis (TGA) shows thermal stability of the prepared composites. Impedance analyzer study revealed the increase in dielectric constant and loss with increase the ADP concentration and the strain rate of the prepared composites decreases with ADP concentration.

  19. An ultra-low power output capacitor-less low-dropout regulator with slew-rate-enhanced circuit

    Science.gov (United States)

    Cheng, Xin; Zhang, Yu; Xie, Guangjun; Yang, Yizhong; Zhang, Zhang

    2018-03-01

    An ultra-low power output-capacitorless low-dropout (LDO) regulator with a slew-rate-enhanced (SRE) circuit is introduced. The increased slew rate is achieved by sensing the transient output voltage of the LDO and then charging (or discharging) the gate capacitor quickly. In addition, a buffer with ultra-low output impedance is presented to improve line and load regulations. This design is fabricated by SMIC 0.18 μm CMOS technology. Experimental results show that, the proposed LDO regulator only consumes an ultra-low quiescent current of 1.2 μA. The output current range is from 10 μA to 200 mA and the corresponding variation of output voltage is less than 40 mV. Moreover, the measured line regulation and load regulation are 15.38 mV/V and 0.4 mV/mA respectively. Project supported by the National Natural Science Foundation of China (Nos. 61401137, 61404043, 61674049).

  20. Defluoridation of water via doping of polyanilines

    Energy Technology Data Exchange (ETDEWEB)

    Karthikeyan, M.; Satheeshkumar, K.K. [Department of Chemistry, Gandhigram Rural University, Gandhigram 624302 (India); Elango, K.P. [Department of Chemistry, Gandhigram Rural University, Gandhigram 624302 (India)], E-mail: drkpelango@rediffmail.com

    2009-04-30

    The potentiality of polyaniline and poly (m-methyl aniline) to remove fluoride from water via doping was investigated. The influence of pH, dosage of polyanilines, initial fluoride concentration and temperature on the amount of fluoride removed by the polyanilines were studied. The amount of fluoride removed at pH 7.0 by 50 mg/50 ml dose was found to be 0.78 mg/g. The data of fluoride removal fitted well with Langmuir and Freundlich isotherms. Thermodynamic parameters computed show that the adsorption process is endothermic in nature. FT-IR, X-ray and EDAX patterns of the polyanilines before and after exposure to fluoride ions suggest that the defluoridation occurs via doping of fluoride ions onto these polymers.

  1. Sodium doping in ZnO crystals

    Science.gov (United States)

    Parmar, N. S.; Lynn, K. G.

    2015-01-01

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

  2. Sodium doping in ZnO crystals

    International Nuclear Information System (INIS)

    Parmar, N. S.; Lynn, K. G.

    2015-01-01

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10 17  cm −3 . Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na Zn level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature

  3. Sodium doping in ZnO crystals

    Energy Technology Data Exchange (ETDEWEB)

    Parmar, N. S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States)

    2015-01-12

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10{sup 17 }cm{sup −3}. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na{sub Zn} level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature.

  4. Hybrid laser technology and doped biomaterials

    Science.gov (United States)

    Jelínek, Miroslav; Zemek, Josef; Remsa, Jan; Mikšovský, Jan; Kocourek, Tomáš; Písařík, Petr; Trávníčková, Martina; Filová, Elena; Bačáková, Lucie

    2017-09-01

    Hybrid laser-based technologies for deposition of new types of doped thin films are presented. The focus is on arrangements combining pulsed laser deposition (PLD) with magnetron sputtering (MS), and on the setup with two simultaneously running PLD systems (dual PLD). Advantages and disadvantages of both arrangements are discussed. Layers of different dopants concentration were prepared. Experience with deposition of chromium and titanium doped diamond-like carbon (DLC) films for potential coating of bone implants is presented. Properties of the layers prepared by both technologies are compared and discussed. The suitability of the layers for colonization with human bone marrow mesenchymal stem cells and human osteoblast-like cells, were also evaluated under in vitro conditions.

  5. Characterization of fluorinated silica thin films with ultra-low refractive index deposited at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Abbasi-Firouzjah, Marzieh [Semnan Science and Technology Park, 3614933578, Shahrood (Iran, Islamic Republic of); Shokri, Babak, E-mail: b-shokri@sbu.ac.ir [Laser & Plasma Research Institute, Shahid Beheshti University, G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of); Physics Department, Shahid Beheshti University, G.C., Evin, Tehran 1983963113 (Iran, Islamic Republic of)

    2015-02-27

    Structural and optical properties of low refractive index fluorinated silica (SiO{sub x}C{sub y}F{sub z}) films were investigated. The films were deposited on p-type silicon and polycarbonate substrates by radio frequency plasma enhanced chemical vapor deposition method at low temperatures. A mixture of tetraethoxysilane vapor, oxygen, and CF{sub 4} was used for deposition of the films. The influence of oxygen flow rate on the elemental compositions, chemical bonding states and surface roughness of the films was studied using energy dispersive X-ray analyzer, Fourier transform infrared spectroscopy in reflectance mode and atomic force microscopy, respectively. Effects of chemical bonds of the film matrix on optical properties and chemical stability were discussed. Energy dispersive spectroscopy showed high fluorine content in the SiO{sub x}C{sub y}F{sub z} film matrix which is in the range of 7.6–11.3%. It was concluded that in fluorine content lower than a certain limit, chemical stability of the film enhances, while higher contents of fluorine heighten moisture absorption followed by increasing refractive index. All of the deposited films were highly transparent. Finally, it was found that the refractive index of the SiO{sub x}C{sub y}F{sub z} film was continuously decreased with the increase of the O{sub 2} flow rate down to the minimum value of 1.16 ± 0.01 (at 632.8 nm) having the most ordered and nano-void structure and the least organic impurities. This sample also had the most chemical stability against moisture absorption. - Highlights: • Low deposition temperature and organic precursor led to higher film fluorination. • High fluorine and nanovoid structure led to drastic decrease in the refractive index. • Silica based thin film with ultralow refractive index of 1.16 was produced. • The produced ultralow-n film is highly stable against moisture absorption.

  6. Toward an Ultralow-Power Onboard Processor for Tongue Drive System.

    Science.gov (United States)

    Viseh, Sina; Ghovanloo, Maysam; Mohsenin, Tinoosh

    2015-02-01

    The Tongue Drive System (TDS) is a new unobtrusive, wireless, and wearable assistive device that allows for real-time tracking of the voluntary tongue motion in the oral space for communication, control, and navigation applications. The latest TDS prototype appears as a wireless headphone and has been tested in human subject trials. However, the robustness of the external TDS (eTDS) in real-life outdoor conditions may not meet safety regulations because of the limited mechanical stability of the headset. The intraoral TDS (iTDS), which is in the shape of a dental retainer, firmly clasps to the upper teeth and resists sensor misplacement. However, the iTDS has more restrictions on its dimensions, limiting the battery size and consequently requiring a considerable reduction in its power consumption to operate over an extended period of two days on a single charge. In this brief, we propose an ultralow-power local processor for the TDS that performs all signal processing on the transmitter side, following the sensors. Assuming the TDS user on average issuing one command/s, implementing the computational engine reduces the data volume that needs to be wirelessly transmitted to a PC or smartphone by a factor of 1500×, from 12 kb/s to ~8 b/s. The proposed design is implemented on an ultralow-power IGLOO nano field-programmable gate array (FPGA) and is tested on AGLN250 prototype board. According to our post-place-and-route results, implementing the engine on the FPGA significantly drops the required data transmission, while an application-specific integrated circuit (ASIC) implementation in a 65-nm CMOS results in a 15× power saving compared to the FPGA solution and occupies a 0.02-mm 2 footprint. As a result, the power consumption and size of the iTDS will be significantly reduced through the use of a much smaller rechargeable battery. Moreover, the system can operate longer following every recharge, improving the iTDS usability.

  7. Effect of pressure and doping on lattice structure of zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zolfaghari, Mahmoud, E-mail: mzolfaghari@phys.usb.ac.ir

    2017-01-15

    The semiconductor ZnO belongs to the IIb-VI binary compound. It has a high exciton binding energy of 60 meV. The bonding in these materials is covalent with some ionic character. Induced changes on the physical properties of Mn doped ZnO samples due to different dopant concentrations and pressure were evaluated. The results obtained showed higher solubility limit for Mn doped ZnO due to pressure. The trend of XRD results for higher Mn concentration (9 at%) as pressure increases, was towards doping improvement. The XRD, SEM and UV–vis study of the samples also revealed that there were variations in the lattice parameters, nanoparticle size and bandgap energy of the doped and pressurized doped samples. Further, the directions of variation of bandgap energy values and calculated particle size, as well as SEM values of the doped samples due to pressure variation were found to be the same i.e. all of them together either increase or decrease as pressure varies. However, these variations were found to be opposite to that of lattice constants (all a and most c values) variation for both Mn dopant concentrations (3 at% and 9 at%). These physical variations of unpressurized doped samples can be attributed to the change in the polar bonding of the elemental constitutions in the lattice. While for the pressurized doped samples, the variations attributed to repulsion of lone pairs as well as change in the electronegativity of the system.

  8. Experimental and theoretical investigation of lattice defect structures in a series of Zn, Fe-doped nonstoichiometric lithium niobate

    International Nuclear Information System (INIS)

    Guo Fengyun; Lue Qiang; Sun Liang; Li Hongtao; Zhen Xihe; Xu Yuheng; Zhao Liancheng

    2006-01-01

    A series of the double doped lithium niobate (LiNbO 3 , LN) single crystals had been grown by Czochralski method. The Curie temperatures of various concentrations doped or [Li]/[Nb] ratio LN crystals measured by differential thermal analysis (DTA) were discussed to investigate their defect structures with Safaryan et al. new approach about LN lattice defect structure using Curie temperatures calculated. Infrared transmission spectra of various concentrations doped were used to compare the investigation above. The results show that the lithium vacancy model is the more probable to describe the lattice defect structure of the doped LN single crystal

  9. Physical and chemical properties of calcium doped neodymium manganite

    International Nuclear Information System (INIS)

    Tikhonova, L.A.; Zhuk, P.P.; Tonoyan, A.A.; Vecher, A.A.

    1991-01-01

    Physical and chemical properties of calcium doped neodymium manganite were investigated. It was shown that structure of perovskite with O'-orthorhombic distortion was characteristic for solid solutions of Nd 1-x Ca x MnO 3 (x=0-0.5). Maximum of conductivity for samples with x=0.2 was determined. Inversion of conductivity from p- (x=0) to n-type (x=0.5) was observed in increase of concentration of calcium doped addition. Values of thermal expansion coefficient of studied solid solutions of Nd 1-x Ca x MnO 3 didn't depend on concentration of doped addition within the range 700 to 1200 K and were (9.9-11.3)·10 -6 K -1

  10. Origin of electrophosphorescence from a doped polymer light emitting diode

    International Nuclear Information System (INIS)

    Lane, P. A.; Palilis, L. C.; O'Brien, D. F.; Giebeler, C.; Cadby, A. J.; Lidzey, D. G.; Campbell, A. J.; Blau, W.; Bradley, D. D. C.

    2001-01-01

    The origin of electrophosphorescence from a doped polymer light emitting diode (LED) has been investigated. A luminescent polymer host, poly(9,9-dioctylfluorene) (PFO), was doped with a red phosphorescent dye, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) (PtOEP). The maximum external quantum efficiency of 3.5% was obtained at a concentration of 4% PtOEP by weight. Energy transfer mechanisms between PFO and PtOEP were studied by absorption, photoluminescence, and photoinduced absorption spectroscopy. Even though electroluminescence spectra were dominated by PtOEP at a concentration of only 0.2 wt% PtOEP, Forster transfer of singlet excitons was weak and there was no evidence for Dexter transfer of triplet excitons. We conclude that the dominant emission mechanism in doped LED's is charge trapping followed by recombination on PtOEP molecules

  11. Isoelectronic Ln doping in p-GaN and its effects on InGaN light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, C. S.; Cheong, H. S.; Kang, D. S.; Kim, J. Y.; Hong, C. H.; Suh, E. K.; Lee, H. J.; Cho, H. K.; Adesida, I.

    2004-01-01

    The effects of isoelectronic In doping in a Mg-doped p-GaN layer on device performance of InGaN light-emitting diodes (LED) were investigated. It was found that there was a decrease of Hall resistivity and contact resistivity in p-GaN with In doping, compared to typical Mg-doped p-GaN. Isoelectronic In doping in p-GaN seems to cause a kind of surfactant effect and/or purification effect similar to the In-doped GaN case, which exhibits a decrease of non-radiative recombination centers and an enhancement of carrier concentration. Light output power and operating voltage were improved by applying an In-doped p-GaN contact layer to the LED.

  12. Cubic to tetragonal phase transition of Tm3+ doped nanocrystals in oxyfluoride glass ceramics

    International Nuclear Information System (INIS)

    Li, Yiming; Fu, Yuting; Shi, Yahui; Zhang, Xiaoyu; Yu, Hua; Zhao, Lijuan

    2016-01-01

    Tm 3+ ions doped β-PbF 2 nanocrystals in oxyfluoride glass ceramics with different doping concentrations and thermal temperatures are prepared by a traditional melt-quenching and thermal treatment method to investigate the structure and the phase transition of Tm 3+ doped nanocrystals. The structures are characterized by X-ray diffraction Rietveld analysis and confirmed with numerical simulation. The phase transitions are proved further by the emission spectra. Both of the doping concentration and thermal temperature can induce an O h to D 4h site symmetry distortion and a cubic to tetragonal phase transition. The luminescence of Tm 3+ doped nanocrystals at 800 nm was modulated by the phase transition of the surrounding crystal field

  13. Ego involvement increases doping likelihood.

    Science.gov (United States)

    Ring, Christopher; Kavussanu, Maria

    2018-08-01

    Achievement goal theory provides a framework to help understand how individuals behave in achievement contexts, such as sport. Evidence concerning the role of motivation in the decision to use banned performance enhancing substances (i.e., doping) is equivocal on this issue. The extant literature shows that dispositional goal orientation has been weakly and inconsistently associated with doping intention and use. It is possible that goal involvement, which describes the situational motivational state, is a stronger determinant of doping intention. Accordingly, the current study used an experimental design to examine the effects of goal involvement, manipulated using direct instructions and reflective writing, on doping likelihood in hypothetical situations in college athletes. The ego-involving goal increased doping likelihood compared to no goal and a task-involving goal. The present findings provide the first evidence that ego involvement can sway the decision to use doping to improve athletic performance.

  14. Genetic doping and health damages.

    Science.gov (United States)

    Fallahi, Aa; Ravasi, Aa; Farhud, Dd

    2011-01-01

    Use of genetic doping or gene transfer technology will be the newest and the lethal method of doping in future and have some unpleasant consequences for sports, athletes, and outcomes of competitions. The World Anti-Doping Agency (WADA) defines genetic doping as "the non-therapeutic use of genes, genetic elements, and/or cells that have the capacity to enhance athletic performance ". The purpose of this review is to consider genetic doping, health damages and risks of new genes if delivered in athletes. This review, which is carried out by reviewing relevant publications, is primarily based on the journals available in GOOGLE, ELSEVIER, PUBMED in fields of genetic technology, and health using a combination of keywords (e.g., genetic doping, genes, exercise, performance, athletes) until July 2010. There are several genes related to sport performance and if they are used, they will have health risks and sever damages such as cancer, autoimmunization, and heart attack.

  15. Doped Parton Distributions

    CERN Document Server

    Bertone, Valerio; Rojo, Juan

    2015-01-01

    Calculations of high-energy processes involving the production of b-quarks are typically performed in two different ways, the massive four-flavour scheme (4FS) and the massless five-flavour scheme (5FS). For processes where the combination of the 4FS and 5FS results into a matched calculation is technically difficult, it is possible to define a hybrid scheme known as the doped scheme, where above the b-quark threshold the strong coupling runs with $n_f=5$, as in the massless calculation, while the DGLAP splitting functions are those of the $n_f=4$ scheme. In this contribution we present NNPDF3.0 PDF sets in this doped scheme, compare them with the corresponding 4FS and 5FS sets, and discuss their relevance for LHC phenomenology.

  16. Simultaneous phase and size control of upconversion nanocrystals through lanthanide doping

    KAUST Repository

    Wang, Feng; Han, Yu; Lim, Chinseong; Lu, Yunhao; Wang, Juan; Xu, Jun; Chen, Hongyu; Zhang, Chun; Hong, Minghui; Liu, Xiaogang

    2010-01-01

    or hexagonal) and upconversion emission colour (green to blue) through use of trivalent lanthanide dopant ions introduced at precisely defined concentrations. We use first-principles calculations to confirm that the influence of lanthanide doping on crystal

  17. Synthesis, characterization and photoluminescence properties of Dy3+ -doped nano-crystalline SnO2.

    CSIR Research Space (South Africa)

    Pillai, SK

    2010-04-15

    Full Text Available the crystallite size. The experimental result on photoluminescence characteristics originating from Dy3+-doping in nanocrystalline SnO2 reveals the dependence of the luminescent intensity on dopant concentration....

  18. [Doping and urologic tumors].

    Science.gov (United States)

    Pinto, F; Sacco, E; Volpe, A; Gardi, M; Totaro, A; Calarco, A; Racioppi, M; Gulino, G; D'Addessi, A; Bassi, P F

    2010-01-01

    Several substances such as growth hormone (GH), erythropoietin (Epo), and anabolic steroids (AS) are improperly utilized to increase the performance of athletes. Evaluating the potential cancer risk associated with doping agents is difficult since these drugs are often used at very high doses and in combination with other licit or illicit drugs. The GH, via its mediator, the insulin-like growth factor 1 (IGF-1), is involved in the development and progression of cancer. Animal studies suggested that high levels of GH/IGF-1 increase progression of androgen-independent prostate cancer. Clinical data regarding prostate cancer are mostly based on epidemiological studies or indirect data such as IGF-1 high levels in patients with prostate cancer. Even if experimental studies showed a correlation between Epo and cancer, no clinical data are currently available on cancer development related to Epo as a doping agent. Androgens are involved in prostate carcinogenesis modulating genes that regulate cell proliferation, apoptosis and angiogenesis. Most information on AS is anecdotal (case reports on prostate, kidney and testicular cancers). Prospective epidemiologic studies failed to support the hypothesis that circulating androgens are positively associated with prostate cancer risk. Currently, clinical and epidemiological studies supporting association between doping and urological neoplasias are not available. Nowadays, exposure to doping agents starts more prematurely with a consequent longer exposition period; drugs are often used at very high doses and in combination with other licit or illicit drugs. Due to all these elements it is impossible to predict all the side effects, including cancer; more detailed studies are therefore necessary.

  19. Doping and Public Health

    DEFF Research Database (Denmark)

    Christiansen, Ask Vest

    rad av världens främsta idrottsvetare och dopningsexperter hade mött upp för att presentera papers till en intresserad och engagerad publik. Temat för konferensen var "Doping and Public Health", och den aspekten behandlades också; dock tolkade flera presentatörer temat på sina egna vis, och hela...

  20. Concentrated Ownership

    DEFF Research Database (Denmark)

    Rose, Caspar

    2014-01-01

    This entry summarizes the main theoretical contributions and empirical findings in relation to concentrated ownership from a law and economics perspective. The various forms of concentrated ownership are described as well as analyzed from the perspective of the legal protection of investors......, especially minority shareholders. Concentrated ownership is associated with benefits and costs. Concentrated ownership may reduce agency costs by increased monitoring of top management. However, concentrated ownership may also provide dominating owners with private benefits of control....