DEPFET active pixel detectors for a future linear $e^+e^-$ collider

CERN Document Server

Alonso, O; Dieguez, A; Dingfelder, J; Hemperek, T; Kishishita, T; Kleinohl, T; Koch, M; Krueger, H; Lemarenko, M; Luetticke, F; Marinas, C; Schnell, M; Wermes, N; Campbell, A; Ferber, T; Kleinwort, C; Niebuhr, C; Soloviev, Y; Steder, M; Volkenborn, R; Yaschenko, S; Fischer, P; Kreidl, C; Peric, I; Knopf, J; Ritzert, M; Curras, E; Lopez-Virto, A; Moya, D; Vila, I; Boronat, M; Esperante, D; Fuster, J; Garcia Garcia, I; Lacasta, C; Oyanguren, A; Ruiz, P; Timon, G; Vos, M; Gessler, T; Kuehn, W; Lange, S; Muenchow, D; Spruck, B; Frey, A; Geisler, C; Schwenker, B; Wilk, F; Barvich, T; Heck, M; Heindl, S; Lutz, O; Mueller, Th; Pulvermacher, C; Simonis, H.J; Weiler, T; Krausser, T; Lipsky, O; Rummel, S; Schieck, J; Schlueter, T; Ackermann, K; Andricek, L; Chekelian, V; Chobanova, V; Dalseno, J; Kiesling, C; Koffmane, C; Gioi, L.Li; Moll, A; Moser, H.G; Mueller, F; Nedelkovska, E; Ninkovic, J; Petrovics, S; Prothmann, K; Richter, R; Ritter, A; Ritter, M; Simon, F; Vanhoefer, P; Wassatsch, A; Dolezal, Z; Drasal, Z; Kodys, P; Kvasnicka, P; Scheirich, J

2013-01-01

The DEPFET collaboration develops highly granular, ultra-transparent active pixel detectors for high-performance vertex reconstruction at future collider experiments. The characterization of detector prototypes has proven that the key principle, the integration of a first amplification stage in a detector-grade sensor material, can provide a comfortable signal to noise ratio of over 40 for a sensor thickness of 50-75 $\\mathrm{\\mathbf{\\mu m}}$. ASICs have been designed and produced to operate a DEPFET pixel detector with the required read-out speed. A complete detector concept is being developed, including solutions for mechanical support, cooling and services. In this paper the status of DEPFET R & D project is reviewed in the light of the requirements of the vertex detector at a future linear $\\mathbf{e^+ e^-}$ collider.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

Science.gov (United States)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Low-cost bump-bonding processes for high energy physics pixel detectors

CERN Document Server

AUTHOR|(CDS)2069357; Blank, Thomas; Colombo, Fabio; Dierlamm, Alexander Hermann; Husemann, Ulrich; Kudella, Simon; Weber, M

2016-01-01

In the next generation of collider experiments detectors will be challenged by unprecedented particle fluxes. Thus large detector arrays of highly pixelated detectors with minimal dead area will be required at reasonable costs. Bump-bonding of pixel detectors has been shown to be a major cost-driver. KIT is one of five production centers of the CMS barrel pixel detector for the Phase I Upgrade. In this contribution the SnPb bump-bonding process and the production yield is reported. In parallel to the production of the new CMS pixel detector, several alternatives to the expensive photolithography electroplating/electroless metal deposition technologies are developing. Recent progress and challenges faced in the development of bump-bonding technology based on gold-stud bonding by thin (15 μm) gold wire is presented. This technique allows producing metal bumps with diameters down to 30 μm without using photolithography processes, which are typically required to provide suitable under bump metallization. The sh...

Recent progress in the development of a B-factory monolithic active pixel detector

International Nuclear Information System (INIS)

Stanic, S.; Aihara, H.; Barbero, M.; Bozek, A.; Browder, T.; Hazumi, M.; Kennedy, J.; Kent, N.; Olsen, S.; Palka, H.; Rosen, M.; Ruckman, L.; Trabelsi, K.; Tsuboyama, T.; Uchida, K.; Varner, G.; Yang, Q.

2006-01-01

Due to the need for precise vertexing at future higher luminosity B-factories with the expectedly increasing track densities and radiation exposures, upgrade of present silicon strip detectors with thin, radiation resistant pixel detectors is highly desired. Considerable progress in the technological development of thin CMOS based Monolithic Active Pixel Sensors (MAPS) in the last years makes them a realistic upgrade option and the feasibility studies of their application in Belle are actively pursued. The most serious concerns are their radiation hardness and their read-out speed. To address them, several prototypes denoted as Continuous Acquisition Pixel (CAP) sensors have been developed and tested. The latest of the CAP sensor prototypes is CAP3, designed in the TSMC 0.25μm process with a 5-deep sample pair pipeline in each pixel. A setup with several CAP3 sensors will be used to assess the performance of a full scale pixel read-out system running at realistic read-out speed. The results and plans for the next stages of R and D towards a full Pixel Vertex Detector (PVD) are presented

STAR PIXEL detector mechanical design

Energy Technology Data Exchange (ETDEWEB)

Wieman, H H; Anderssen, E; Greiner, L; Matis, H S; Ritter, H G; Sun, X; Szelezniak, M [Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)], E-mail: hhwieman@lbl.gov

2009-05-15

A high resolution pixel detector is being designed for the STAR [1] experiment at RHIC. This device will use MAPS as the detector element and will have a pointing accuracy of {approx}25 microns. We will be reporting on the mechanical design required to support this resolution. The radiation length of the first layer ({approx}0.3% X{sub 0}) and its distance from the interaction point (2.5 cm) determines the resolution. The design makes use of air cooling and thin carbon composite structures to limit the radiation length. The mechanics are being developed to achieve spatial calibrations and stability to 20 microns and to permit rapid detector replacement in event of radiation damage or other potential failures from operation near the beam.

PROTON RADIOGRAPHY WITH THE PIXEL DETECTOR TIMEPIX

Directory of Open Access Journals (Sweden)

Václav Olšanský

2016-12-01

Full Text Available This article presents the processing of radiographic data acquired using the position-sensitive hybrid semiconductor pixel detector Timepix. Measurements were made on thin samples at the medical ion-synchrotron HIT [1] in Heidelberg (Germany with a 221 MeV proton beam. The charge is energy by the particles crossing the sample is registered for generation of image contrast. Experimental data from the detector were processed for derivation of the energy loss of each proton using calibration matrices. The interaction point of the protons on the detector were determined with subpixel resolution by model fitting of the individual signals in the pixelated matrix. Three methods were used for calculation of these coordinates: Hough transformation, 2D Gaussian fitting and estimate the 2D mean. Parameters of calculation accuracy and calculation time are compared for each method. The final image was created by method with best parameters.

ATLAS Pixel Detector Operational Experience

CERN Document Server

Di Girolamo, B; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.9% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

The Belle II DEPFET pixel detector

Energy Technology Data Exchange (ETDEWEB)

Moser, Hans-Günther, E-mail: moser@mpp.mpg.de

2016-09-21

The Belle II experiment at KEK (Tsukuba, Japan) will explore heavy flavour physics (B, charm and tau) at the starting of 2018 with unprecedented precision. Charged particles are tracked by a two-layer DEPFET pixel device (PXD), a four-layer silicon strip detector (SVD) and the central drift chamber (CDC). The PXD will consist of two layers at radii of 14 mm and 22 mm with 8 and 12 ladders, respectively. The pixel sizes will vary, between 50 μm×(55–60) μm in the first layer and between 50 μm×(70–85) μm in the second layer, to optimize the charge sharing efficiency. These innermost layers have to cope with high background occupancy, high radiation and must have minimal material to reduce multiple scattering. These challenges are met using the DEPFET technology. Each pixel is a FET integrated on a fully depleted silicon bulk. The signal charge collected in the ‘internal gate’ modulates the FET current resulting in a first stage amplification and therefore very low noise. This allows very thin sensors (75 μm) reducing the overall material budget of the detector (0.21% X{sub 0}). Four fold multiplexing of the column parallel readout allows read out a full frame of the pixel matrix in only 20 μs while keeping the power consumption low enough for air cooling. Only the active electronics outside the detector acceptance has to be cooled actively with a two phase CO{sub 2} system. Furthermore the DEPFET technology offers the unique feature of an electronic shutter which allows the detector to operate efficiently in the continuous injection mode of superKEKB.

Diamond Pixel Detectors

International Nuclear Information System (INIS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Gobbi, B.; Grim, G.P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; Lynne, L.M.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L.; Pirollo, S.; Plano, R.; Procario, M.; Riester, J.L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.

2001-01-01

Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles

Diamond Pixel Detectors

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D' Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Doroshenko, J.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foster, J.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Gobbi, B.; Grim, G.P.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Lander, R.; Logiudice, A.; Lu, R.; Lynne, L.M.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L.S.; Pernicka, M.; Perera, L. E-mail: perera@physics.rutgers.edu; Pirollo, S.; Plano, R.; Procario, M.; Riester, J.L.; Roe, S.; Rott, C.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M

2001-06-01

Diamond based pixel detectors are a promising radiation-hard technology for use at the LHC. We present first results on a CMS diamond pixel sensor. With a threshold setting of 2000 electrons, an average pixel efficiency of 78% was obtained for normally incident minimum ionizing particles.

Silicon pixel-detector R&D for CLIC

CERN Document Server

AUTHOR|(SzGeCERN)718101

2016-01-01

The physics aims at the future CLIC high-energy linear e+e- collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The principal challenges are: a point resolution of a few μm, ultra-low mass (∼ 0.2% X${}_0$ per layer for the vertex region and ∼ 1 % X${}_0$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ∼ 10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analog readout are explored. For the outer trac...

Optical readout and control interface for the BTeV pixel vertex detector

CERN Document Server

Vergara-Limon, S; Sheaff, M; Vargas, M A

2002-01-01

Optical links will be used for sending data back and forth from the counting room to the detector in the data acquisition systems for future high energy physics experiments, including ATLAS and CMS in the LHC at CERN (Switzerland) and BTeV at Fermilab (USA). This is because they can be ultra-high speed and are relatively immune to electro-magnetic interference (EMI). The baseline design for the BTeV Pixel Vertex Detector includes two types of optical link, one to control and monitor and the other to read out the hit data from the multi-chip modules on each half-plane of the detector. The design and performance of the first prototype of the Optical Readout and Control Interface for the BTeV Pixel Vertex Detector is described.

Test-beam measurements and simulation studies of thin pixel sensors for the CLIC vertex detector

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00574329; Dannheim, Dominik

The multi-$TeV$ $e^{+}e^{-}$ Compact Linear Collider (CLIC) is one of the options for a future high-energy collider for the post-LHC era. It would allow for searches of new physics and simultaneously offer the possibility for precision measurements of standard model processes. The physics goals and experimental conditions at CLIC set high precision requirements on the vertex detector made of pixel detectors: a high pointing resolution of 3 $\\mu m$, very low mass of 0.2% $X_{0}$ per layer, 10 ns time stamping capability and low power dissipation of 50 mW/$cm^{2}$ compatible with air-flow cooling. In this thesis, hybrid assemblies with thin active-edge planar sensors are characterised through calibrations, laboratory and test-beam measurements. Prototypes containing 50 $\\mu m$ to 150 $\\mu m$ thin planar silicon sensors bump-bonded to Timepix3 readout ASICs with 55 $\\mu m$ pitch are characterised in test beams at the CERN SPS in view of their detection efficiency and single-point resolution. A digitiser for AllP...

Development of Ultra-Fast Silicon Detectors for 4D tracking

Science.gov (United States)

Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

2017-12-01

In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

Development of Small-Pixel CZT Detectors for Future High-Resolution Hard X-ray Missions

Science.gov (United States)

Beilicke, Matthias

Owing to recent breakthroughs in grazing incidence mirror technology, next-generation hard X-ray telescopes will achieve angular resolutions of between 5 and 10 arc seconds - about an order of magnitude better than that of the NuSTAR hard X-ray telescope. As a consequence, the next generation of hard X-ray telescopes will require pixelated hard X- ray detectors with pixels on a grid with a lattice constant of between 120 and 240 um. Additional detector requirements include a low energy threshold of less than 5 keV and an energy resolution of less than 1 keV. The science drivers for a high angular-resolution hard X-ray mission include studies and measurements of black hole spins, the cosmic evolution of super-massive black holes, AGN feedback, and the behavior of matter at very high densities. We propose a R&D research program to develop, optimize and study the performance of 100-200 um pixel pitch CdTe and Cadmium Zinc Telluride (CZT) detectors of 1-2 mm thickness. Our program aims at a comparison of the performance achieved with CdTe and CZT detectors, and the optimization of the pixel, steering grid, and guard ring anode patterns. Although these studies will use existing ASICs (Application Specific Integrated Circuits), our program also includes modest funds for the development of an ultra-low noise ASIC with a 2-D grid of readout pads that can be directly bonded to the 100-200 um pixel pitch CdTe and CZT detectors. The team includes the Washington University group (Prof. M. Beilicke and Co-I Prof. H.S.W. Krawczynski et al.), and co-investigator G. De Geronimo at Brookhaven National Laboratory (BNL). The Washington University group has a 10 year track record of innovative CZT detector R&D sponsored by the NASA Astronomy and Physics Research and Analysis (APRA) program. The accomplishments to date include the development of CZT detectors with pixel pitches between 350 um and 2.5 mm for the ProtoExist, EXIST, and X-Calibur hard X-ray missions with some of the best

The ATLAS Pixel Detector

CERN Document Server

Huegging, Fabian

2006-06-26

The contruction of the ATLAS Pixel Detector which is the innermost layer of the ATLAS tracking system is prgressing well. Because the pixel detector will contribute significantly to the ATLAS track and vertex reconstruction. The detector consists of identical sensor-chip-hybrid modules, arranged in three barrels in the centre and three disks on either side for the forward region. The position of the detector near the interaction point requires excellent radiation hardness, mechanical and thermal robustness, good long-term stability for all parts, combined with a low material budget. The final detector layout, new results from production modules and the status of assembly are presented.

Low mass hybrid pixel detectors for the high luminosity LHC upgrade

Energy Technology Data Exchange (ETDEWEB)

Gonella, Laura

2013-10-15

Reducing material in silicon trackers is of major importance for a good overall detector performance, and poses severe challenges to the design of the tracking system. To match the low mass constraints for trackers in High Energy Physics experiments at high luminosity, dedicated technological developments are required. This dissertation presents three technologies to design low mass hybrid pixel detectors for the high luminosity upgrades of the LHC. The work targets specifically the reduction of the material from the detector services and modules, with novel powering schemes, flip chip and interconnection technologies. A serial powering scheme is prototyped, featuring a new regulator concept, a control and protection element, and AC-coupled data transmission. A modified flip chip technology is developed for thin, large area Front-End chips, and a via last Through Silicon Via process is demonstrated on existing pixel modules. These technologies, their developments, and the achievable material reduction are discussed using the upgrades of the ATLAS pixel detector as a case study.

Low mass hybrid pixel detectors for the high luminosity LHC upgrade

International Nuclear Information System (INIS)

Gonella, Laura

2013-10-01

Reducing material in silicon trackers is of major importance for a good overall detector performance, and poses severe challenges to the design of the tracking system. To match the low mass constraints for trackers in High Energy Physics experiments at high luminosity, dedicated technological developments are required. This dissertation presents three technologies to design low mass hybrid pixel detectors for the high luminosity upgrades of the LHC. The work targets specifically the reduction of the material from the detector services and modules, with novel powering schemes, flip chip and interconnection technologies. A serial powering scheme is prototyped, featuring a new regulator concept, a control and protection element, and AC-coupled data transmission. A modified flip chip technology is developed for thin, large area Front-End chips, and a via last Through Silicon Via process is demonstrated on existing pixel modules. These technologies, their developments, and the achievable material reduction are discussed using the upgrades of the ATLAS pixel detector as a case study.

Charge amplitude distribution of the Gossip gaseous pixel detector

NARCIS (Netherlands)

Blanco Carballo, V.M.; Chefdeville, M.A.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Gromov, V.; Hartjes, F.; Kluit, R.; Koffeman, E.; Salm, Cora; Schmitz, Jurriaan; Smits, Sander M.; Timmermans, J.; Timmermans, J.; Visschers, J.L.

2007-01-01

The Gossip gaseous pixel detector is being developed for the detection of charged particles in extreme high radiation environments as foreseen close to the interaction point of the proposed super LHC. The detecting medium is a thin layer of gas. Because of the low density of this medium, only a few

Overview of the CMS Pixel Detector

CERN Document Server

Cerati, Giuseppe B

2008-01-01

The Compact Muon Solenoid Experiment (CMS) will start taking data at the Large Hadron Collider (LHC) in 2009. It will investigate the proton-proton collisions at $14~TeV$. A robust tracking combined with a precise vertex reconstruction is crucial to address the physics challenge of proton collisions at this energy. To this extent an all-silicon tracking system with very fine granularity has been built and now is in the final commissioning phase. It represents the largest silicon tracking detector ever built. The system is composed by an outer part, made of micro-strip detectors, and an inner one, made of pixel detectors. The pixel detector consists of three pixel barrel layers and two forward disks at each side of the interaction region. Each pixel sensor, both for the barrel and forward detectors, has $100 \\times 150$ $\\mu m^2$ cells for a total of 66 million pixels covering a total area of about $1~m^2$. The pixel detector will play a crucial role in the pattern recognition and the track reconstruction both...

Si and gaas pixel detectors for medical imaging applications

International Nuclear Information System (INIS)

Bisogni, M. G.

2001-01-01

As the use of digital radiographic equipment in the morphological imaging field is becoming the more and more diffuse, the research of new and more performing devices from public institutions and industrial companies is in constant progress. Most of these devices are based on solid-state detectors as X-ray sensors. Semiconductor pixel detectors, originally developed in the high energy physics environment, have been then proposed as digital detector for medical imaging applications. In this paper a digital single photon counting device, based on silicon and GaAs pixel detector, is presented. The detector is a thin slab of semiconductor crystal where an array of 64 by 64 square pixels, 170- m side, has been built on one side. The data read-out is performed by a VLSI integrated circuit named Photon Counting Chip (PCC), developed within the MEDIPIX collaboration. Each chip cell geometrically matches the sensor pixel. It contains a charge preamplifier, a threshold comparator and a 15 bits pseudo-random counter and it is coupled to the detector by means of bump bonding. Most important advantages of such system, with respect to a traditional X-rays film/screen device, are the wider linear dynamic range (3x104) and the higher performance in terms of MTF and DQE. Besides the single photon counting architecture allows to detect image contrasts lower than 3%. Electronics read-out performance as well as imaging capabilities of the digital device will be presented. Images of mammographic phantoms acquired with a standard Mammographic tube will be compared with radiographs obtained with traditional film/screen systems

Silicon pixel R&D for the CLIC detector

CERN Document Server

AUTHOR|(SzGeCERN)674552

2017-01-01

The physics aims at the future CLIC high-energy linear $e^{+}e^{−}$ collider set very high precision requirements on the performance of the vertex and tracking detectors. Moreover, these detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The main challenges are: a point resolution of a few microns, ultra-low mass (~0.2% X$_{0}$ per layer for the vertex region and ~1% X$_{0}$ per layer for the outer tracker), very low power dissipation (compatible with air-flow cooling in the inner vertex region) and pulsed power operation, complemented with ~10 ns time stamping capabilities. A highly granular all-silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints. For the vertex-detector region, hybrid pixel detectors with small pitch (25 μm) and analogue readout are explored. For the outer tra...

ATLAS ITk Pixel detector

CERN Document Server

Gemme, Claudia; The ATLAS collaboration

2016-01-01

The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenge to the ATLAS tracker. The current inner detector will be replaced with a whole silicon tracker which will consist of a five barrel layer Pixel detector surrounded by a four barrel layer Strip detector. The expected high radiation level are requiring the development of upgraded silicon sensors as well as new a front-end chip. The dense tracking environment will require finer granularity detectors. The data rates will require new technologies for high bandwidth data transmission and handling. The current status of the HL-LHC ATLA Pixel detector developments as well as the various layout options will be reviewed.

Pixelated CdZnTe drift detectors

DEFF Research Database (Denmark)

Kuvvetli, Irfan; Budtz-Jørgensen, Carl

2005-01-01

A technique, the so-called Drift Strip Method (DSM), for improving the CdZnTe detector energy response to hard X-rays and gamma-rays was applied as a pixel geometry. First tests have confirmed that this detector type provides excellent energy resolution and imaging performance. We specifically...... report on the performance of 3 mm thick prototype CZT drift pixel detectors fabricated using material from eV-products. We discuss issues associated with detector module performance. Characterization results obtained from several prototype drift pixel detectors are presented. Results of position...

Ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

2013-12-01

We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

Silicon micro-fluidic cooling for NA62 GTK pixel detectors

CERN Document Server

Romagnoli, G; Brunel, B; Catinaccio, A; Degrange, J; Mapelli, A; Morel, M; Noel, J; Petagna, P

2015-01-01

Silicon micro-channel cooling is being studied for efficient thermal management in application fields such as high power computing and 3D electronic integration. This concept has been introduced in 2010 for the thermal management of silicon pixel detectors in high energy physics experiments. Combining the versatility of standard micro-fabrication processes with the high thermal efficiency typical of micro-fluidics, it is possible to produce effective thermal management devices that are well adapted to different detector configurations. The production of very thin cooling devices in silicon enables a minimization of material of the tracking sensors and eliminates mechanical stresses due to the mismatch of the coefficient of thermal expansion between detectors and cooling systems. The NA62 experiment at CERN will be the first high particle physics experiment that will install a micro-cooling system to perform the thermal management of the three detection planes of its Gigatracker pixel detector.

Data acquisition at the front-end of the Mu3e pixel detector

Energy Technology Data Exchange (ETDEWEB)

Perrevoort, Ann-Kathrin [Physikalisches Institut, Universitaet Heidelberg (Germany); Collaboration: Mu3e-Collaboration

2016-07-01

The Mu3e experiment - searching for the lepton-flavour violating decay of the muon into three electrons at an unprecedented sensitivity of one in 10{sup 16} decays - is based on a pixel tracking detector. The sensors are High-Voltage Monolithic Active Pixel Sensors, a technology which allows for very fast and thin detectors, and thus is an ideal fit for Mu3e where the trajectories of low-momentum electrons at high rates are to be measured. The detector will consist of about 275 million pixels and will be operated at up to 10{sup 9} muon stops per second. Therefore, a fast and trigger-less data readout is required. The pixel sensors feature zero-suppressed data output via high-speed serial links. The data is then buffered and sorted by time on a FPGA on the front-end before being processed to the following readout stage. In this talk, the readout of the Mu3e pixel detector at the front-end is introduced. Furthermore, a first firmware implementation of this concept in a beam telescope consisting of the current pixel sensor prototype MuPix7 is presented.

Operational experience of the ATLAS Pixel detector

CERN Document Server

Hirschbuehl, D; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Operational experience of the ATLAS Pixel Detector

CERN Document Server

Marcisovsky, M; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Gas pixel detectors

International Nuclear Information System (INIS)

Bellazzini, R.; Baldini, L.; Brez, A.; Cavalca, F.; Latronico, L.; Massai, M.M.; Minuti, M.; Omodei, N.; Pesce-Rollins, M.; Sgro, C.; Spandre, G.; Costa, E.; Soffitta, P.

2007-01-01

With the Gas Pixel Detector (GPD), the class of micro-pattern gas detectors has reached a complete integration between the gas amplification structure and the read-out electronics. To obtain this goal, three generations of application-specific integrated circuit of increased complexity and improved functionality has been designed and fabricated in deep sub-micron CMOS technology. This implementation has allowed manufacturing a monolithic device, which realizes, at the same time, the pixelized charge-collecting electrode and the amplifying, shaping and charge measuring front-end electronics of a GPD. A big step forward in terms of size and performances has been obtained in the last version of the 0.18 μm CMOS analog chip, where over a large active area of 15x15 mm 2 a very high channel density (470 pixels/mm 2 ) has been reached. On the top metal layer of the chip, 105,600 hexagonal pixels at 50 μm pitch have been patterned. The chip has customable self-trigger capability and includes a signal pre-processing function for the automatic localization of the event coordinates. In this way, by limiting the output signal to only those pixels belonging to the region of interest, it is possible to reduce significantly the read-out time and data volume. In-depth tests performed on a GPD built up by coupling this device to a fine pitch (50 μm) gas electron multiplier are reported. Matching of the gas amplification and read-out pitch has let to obtain optimal results. A possible application of this detector for X-ray polarimetry of astronomical sources is discussed

CMS Pixel Detector Upgrade

CERN Document Server

INSPIRE-00038772

2011-01-01

The present Compact Muon Solenoid silicon pixel tracking system has been designed for a peak luminosity of 1034cm-2s-1 and total dose corresponding to two years of the Large Hadron Collider (LHC) operation. With the steady increase of the luminosity expected at the LHC, a new pixel detector with four barrel layers and three endcap disks is being designed. We will present the key points of the design: the new geometry, which minimizes the material budget and increases the tracking points, and the development of a fast digital readout architecture, which ensures readout efficiency even at high rate. The expected performances for tracking and vertexing of the new pixel detector are also addressed.

Operational Experience with the ATLAS Pixel Detector

CERN Document Server

Djama, Fares; The ATLAS collaboration

2017-01-01

Run 2 of the LHC collider sets new challenges to track and vertex reconstruction because of its higher energy, pileup and luminosity. The ATLAS tracking performance relies critically on the Pixel Detector. Therefore, in view of Run 2, the ATLAS collaboration has constructed the first 4-layer pixel detector in Particle Physics by installing a new pixel layer, called Insertable B-Layer (IBL). Operational experience and performance of the 4-layer Pixel Detector during Run 2 are presented.

The ALICE Silicon Pixel Detector System (SPD)

CERN Document Server

Kluge, A; Antinori, Federico; Burns, M; Cali, I A; Campbell, M; Caselle, M; Ceresa, S; Dima, R; Elias, D; Fabris, D; Krivda, Marian; Librizzi, F; Manzari, Vito; Morel, M; Moretto, Sandra; Osmic, F; Pappalardo, G S; Pepato, Adriano; Pulvirenti, A; Riedler, P; Riggi, F; Santoro, R; Stefanini, G; Torcato De Matos, C; Turrisi, R; Tydesjo, H; Viesti, G; PH-EP

2007-01-01

The ALICE silicon pixel detector (SPD) comprises the two innermost layers of the ALICE inner tracker system. The SPD includes 120 detector modules (half-staves) each consisting of 10 ALICE pixel chips bump bonded to two silicon sensors and one multi-chip read-out module. Each pixel chip contains 8192 active cells, so that the total number of pixel cells in the SPD is ≈ 107. The on-detector read-out is based on a multi-chip-module containing 4 ASICs and an optical transceiver module. The constraints on material budget and detector module dimensions are very demanding.

Finite-element simulations of coupling capacitances in capacitively coupled pixel detectors

CERN Document Server

AUTHOR|(SzGeCERN)755510

2017-01-01

Capacitively coupled hybrid silicon pixel-detector assemblies are under study for the vertex detector at the proposed future CLIC linear electron-positron collider. The assemblies consist of active CCPDv3 sensors, with 25 μm pixel pitch implemented in a 180 nm High- Voltage CMOS process, which are glued to the CLICpix readout ASIC, with the same pixel pitch and processed in a commercial 65 nm CMOS technology. The signal created in the silicon bulk of the active sensors passes a two-stage amplifier, in each pixel, and gets transferred as a voltage pulse to metal pads facing the readout chip (ROC). The coupling of the signal to the metal pads on the ROC side proceeds through the capacitors formed between the two chips by a thin layer of epoxy glue. The coupling strength and the amount of unwanted cross coupling to neighbouring pixels depends critically on the uniformity of the glue layer, its thickness and on the alignment precision during the flip-chip assembly process. Finite-element calculations of the coup...

Applying Statistical Mechanics to pixel detectors

International Nuclear Information System (INIS)

Pindo, Massimiliano

2002-01-01

Pixel detectors, being made of a large number of active cells of the same kind, can be considered as significant sets to which Statistical Mechanics variables and methods can be applied. By properly redefining well known statistical parameters in order to let them match the ones that actually characterize pixel detectors, an analysis of the way they work can be performed in a totally new perspective. A deeper understanding of pixel detectors is attained, helping in the evaluation and comparison of their intrinsic characteristics and performance

Operational experience with the ATLAS Pixel Detector

CERN Document Server

Ince, T; The ATLAS collaboration

2012-01-01

The ATLAS Pixel Detector is the innermost element of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Vertex-Detector R&D for CLIC

OpenAIRE

Dannheim, Dominik

2013-01-01

A detector concept based on hybrid planar pixel-detector technology is under development for the CLIC vertex detector. It comprises fast, low-power and small-pitch readout ASICs implemented in 65 nm CMOS technology (CLICpix) coupled to ultra-thin sensors via low-mass interconnects. The power dissipation of the readout chips is reduced by means of power pulsing, allowing for a cooling system based on forced gas flow. In this paper the CLIC vertex-detector requirements are reviewed and the curr...

CMS Barrel Pixel Detector Overview

CERN Document Server

Kästli, H C; Erdmann, W; Gabathuler, K; Hörmann, C; Horisberger, Roland Paul; König, S; Kotlinski, D; Meier, B; Robmann, P; Rohe, T; Streuli, S

2007-01-01

The pixel detector is the innermost tracking device of the CMS experiment at the LHC. It is built from two independent sub devices, the pixel barrel and the end disks. The barrel consists of three concentric layers around the beam pipe with mean radii of 4.4, 7.3 and 10.2 cm. There are two end disks on each side of the interaction point at 34.5 cm and 46.5 cm. This article gives an overview of the pixel barrel detector, its mechanical support structure, electronics components, services and its expected performance.

Small Pixel Hybrid CMOS X-ray Detectors

Science.gov (United States)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

The pin pixel detector--neutron imaging

CERN Document Server

Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Rhodes, N J; Schooneveld, E M; Simmons, J E; Stephenson, R

2002-01-01

The development and testing of a neutron gas pixel detector intended for application in neutron diffraction studies is reported. Using standard electrical connector pins as point anodes, the detector is based on a commercial 100 pin connector block. A prototype detector of aperture 25.4 mmx25.4 mm has been fabricated, giving a pixel size of 2.54 mm which matches well to the spatial resolution typically required in a neutron diffractometer. A 2-Dimensional resistive divide readout system has been adapted to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics. The timing properties of the device match well to the requirements of the ISIS-pulsed neutron source.

LePix-A high resistivity, fully depleted monolithic pixel detector

CERN Document Server

Giubilato, P; Mugnier, H; Bisello, D; Marchioro, A; Snoeys, W; Denes, P; Pantano, D; Rousset, J; Mattiazzo, S; Kloukinas, K; Potenza, A; Rivetti, A; Chalmet, P

2013-01-01

The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. Such sensors are expected to offer significant cost savings and reduction of power consumption for the same performance, leading to the use of much less material in the detector (less cooling and less copper), addressing one of the main limitations of present day particle tracking systems. The latest evolution of the project uses detectors thinned down to 50 mu m to obtain back illuminated sensors operated in full depletion mode. By back processin...

Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

Energy Technology Data Exchange (ETDEWEB)

Beimforde, Michael

2010-07-19

To extend the discovery potential of the experiments at the LHC accelerator a two phase luminosity upgrade towards the super LHC (sLHC) with a maximum instantaneous luminosity of 10{sup 35}/cm{sup 2}s{sup 1} is planned. Retaining the reconstruction efficiency and spatial resolution of the ATLAS tracking detector at the sLHC, new pixel modules have to be developed that have a higher granularity, can be placed closer to the interaction point, and allow for a cost-efficient coverage of a larger pixel detector volume compared to the present one. The reduced distance to the interaction point calls for more compact modules that have to be radiation hard to supply a sufficient charge collection efficiency up to an integrated particle fluence equivalent to that of (1-2).10{sup 16} 1-MeV-neutrons per square centimeter (n{sub eq}/cm{sup 2}). Within this thesis a new module concept was partially realised and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules from 71% to about 90% and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector. A semiconductor simulation and measurements of irradiated test sensors are used to optimize the implantation parameters for the inter-pixel isolation of the thin sensors. These reduce the crosstalk between the pixel channels and should allow for operating the sensors during the whole runtime of the experiment without causing junction breakdowns. The characterization of the first production of sensors with active thicknesses of 75 {mu}m and 150 {mu}m proved that thin pixel sensors can be successfully produced with the new process technology. Thin pad sensors with a reduced inactive

Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

International Nuclear Information System (INIS)

Beimforde, Michael

2010-01-01

To extend the discovery potential of the experiments at the LHC accelerator a two phase luminosity upgrade towards the super LHC (sLHC) with a maximum instantaneous luminosity of 10 35 /cm 2 s 1 is planned. Retaining the reconstruction efficiency and spatial resolution of the ATLAS tracking detector at the sLHC, new pixel modules have to be developed that have a higher granularity, can be placed closer to the interaction point, and allow for a cost-efficient coverage of a larger pixel detector volume compared to the present one. The reduced distance to the interaction point calls for more compact modules that have to be radiation hard to supply a sufficient charge collection efficiency up to an integrated particle fluence equivalent to that of (1-2).10 16 1-MeV-neutrons per square centimeter (n eq /cm 2 ). Within this thesis a new module concept was partially realised and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules from 71% to about 90% and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector. A semiconductor simulation and measurements of irradiated test sensors are used to optimize the implantation parameters for the inter-pixel isolation of the thin sensors. These reduce the crosstalk between the pixel channels and should allow for operating the sensors during the whole runtime of the experiment without causing junction breakdowns. The characterization of the first production of sensors with active thicknesses of 75 μm and 150 μm proved that thin pixel sensors can be successfully produced with the new process technology. Thin pad sensors with a reduced inactive edge demonstrate that the active

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Drewery, J.; Hong, W.S.; Jing, T.; Kaplan, S.N.; Lee, H.; Mireshghi, A.

1994-10-01

We describe the characteristics of thin (1 μm) and thick (>30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-rays and γ rays. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For direct detection of charged particles with high resistance to radiation damage, we use the thick p-i-n diode arrays. Deposition techniques using helium dilution, which produce samples with low stress are described. Pixel arrays for flux exposures can be readout by transistor, single diode or two diode switches. Polysilicon charge sensitive pixel amplifiers for single event detection are described. Various applications in nuclear, particle physics, x-ray medical imaging, neutron crystallography, and radionuclide chromatography are discussed

18F-FDG positron autoradiography with a particle counting silicon pixel detector.

Science.gov (United States)

Russo, P; Lauria, A; Mettivier, G; Montesi, M C; Marotta, M; Aloj, L; Lastoria, S

2008-11-07

We report on tests of a room-temperature particle counting silicon pixel detector of the Medipix2 series as the detector unit of a positron autoradiography (AR) system, for samples labelled with (18)F-FDG radiopharmaceutical used in PET studies. The silicon detector (1.98 cm(2) sensitive area, 300 microm thick) has high intrinsic resolution (55 microm pitch) and works by counting all hits in a pixel above a certain energy threshold. The present work extends the detector characterization with (18)F-FDG of a previous paper. We analysed the system's linearity, dynamic range, sensitivity, background count rate, noise, and its imaging performance on biological samples. Tests have been performed in the laboratory with (18)F-FDG drops (37-37 000 Bq initial activity) and ex vivo in a rat injected with 88.8 MBq of (18)F-FDG. Particles interacting in the detector volume produced a hit in a cluster of pixels whose mean size was 4.3 pixels/event at 11 keV threshold and 2.2 pixels/event at 37 keV threshold. Results show a sensitivity for beta(+) of 0.377 cps Bq(-1), a dynamic range of at least five orders of magnitude and a lower detection limit of 0.0015 Bq mm(-2). Real-time (18)F-FDG positron AR images have been obtained in 500-1000 s exposure time of thin (10-20 microm) slices of a rat brain and compared with 20 h film autoradiography of adjacent slices. The analysis of the image contrast and signal-to-noise ratio in a rat brain slice indicated that Poisson noise-limited imaging can be approached in short (e.g. 100 s) exposures, with approximately 100 Bq slice activity, and that the silicon pixel detector produced a higher image quality than film-based AR.

Operational Experience with the ATLAS Pixel Detector

CERN Document Server

Djama, Fares; The ATLAS collaboration

2017-01-01

Run-2 of the LHC is providing new challenges to track and vertex reconstruction imposed by the higher collision energy, pileup and luminosity that are being delivered. The ATLAS tracking performance relies critically on the Pixel Detector, therefore, in view of Run-2 of LHC, the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and an additional optical link per module was added to overcome in some layers the readout bandwidth limitation when LHC will exceed the nominal peak luminosity by almost a factor of 3. The key features and challenges met during the IBL project will be presented, as well as its operational experience and Pixel Detector performance in LHC.

Low mass hybrid pixel detectors for the high luminosity LHC upgrade

CERN Document Server

Gonella, Laura; Desch, Klaus

2013-11-11

Reducing material in silicon trackers is of major importance for a good overall detector performance, and poses severe challenges to the design of the tracking system. To match the low mass constraints for trackers in High Energy Physics experiments at high luminosity, dedicated technological developments are required. This dissertation presents three technologies to design low mass hybrid pixel detectors for the high luminosity upgrades of the LHC. The work targets specifically the reduction of the material from the detector services and modules, with novel powering schemes, flip chip and interconnection technologies. A serial powering scheme is prototyped, featuring a new regulator concept, a control and protection element, and AC-coupled data transmission. A modified flip chip technology is developed for thin, large area Front-End chips, and a via last Through Silicon Via process is demonstrated on existing pixel modules. These technologies, their developments, and the achievable material reduction are dis...

An EUDET/AIDA Pixel Beam Telescope for Detector Development

CERN Document Server

Perrey, Hanno

2013-01-01

A high resolution ($\\sigma 2 \\sim \\mu$) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. The telescope consists of six sensor planes using Mimosa26 MAPS with a pixel pitch of $18.4 \\mu$ and thinned down to $50 \\mu$. The excellent resolution, readout rate and DAQ integration capabilities made the telescope a primary test beam tool for many groups including several CERN based experiments. Within the new European detector infrastructure project AIDA the test beam telescope will be further extended in terms of cooling infrastructure, readout speed and precision. In order to provide a system optimized for the different requirements by the user community, a combination of various pixel technologies is foreseen. In this report the design of this even more flexible telescope with three different pixel technologies (TimePix, Mimosa, ATLAS FE-I4) will be presented. First test beam results with the HitOR signal provided by the FE-I4 integrated into the trigger...

Operational Experience with the ATLAS Pixel Detector

CERN Document Server

Lantzsch, Kerstin; The ATLAS collaboration

2016-01-01

Run 2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). In addition the Pixel detector was refurbished with new service quarter panels to recover about 3% of defective modules lost during run 1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning, operation and performance of the 4-layer Pixel Detector will be presented.

Results from the NA62 Gigatracker Prototype: A Low-Mass and sub-ns Time Resolution Silicon Pixel Detector

Science.gov (United States)

Fiorini, M.; Rinella, G. Aglieri; Carassiti, V.; Ceccucci, A.; Gil, E. Cortina; Ramusino, A. Cotta; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petagna, P.; Petrucci, F.; Perktold, L.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

The Gigatracker (GTK) is a hybrid silicon pixel detector developed for NA62, the experiment aimed at studying ultra-rare kaon decays at the CERN SPS. Three GTK stations will provide precise momentum and angular measurements on every track of the high intensity NA62 hadron beam with a time-tagging resolution of 150 ps. Multiple scattering and hadronic interactions of beam particles in the GTK have to be minimized to keep background events at acceptable levels, hence the total material budget is fixed to 0.5% X0 per station. In addition the calculated fluence for 100 days of running is 2×1014 1 MeV neq/cm2, comparable to the one expected for the inner trackers of LHC detectors in 10 years of operation. These requirements pose challenges for the development of an efficient and low-mass cooling system, to be operated in vacuum, and on the thinning of read-out chips to 100 μm or less. The most challenging requirement is represented by the time resolution, which can be achieved by carefully compensating for the discriminator time-walk. For this purpose, two complementary read-out architectures have been designed and produced as small-scale prototypes: the first is based on the use of a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other uses a constant-fraction discriminator followed by an on-pixel TDC. The readout pixel ASICs are produced in 130 nm IBM CMOS technology and bump-bonded to 200 μm thick silicon sensors. The Gigatracker detector system is described with particular emphasis on recent experimental results obtained from laboratory and beam tests of prototype bump-bonded assemblies, which show a time resolution of less than 200 ps for single hits.

A novel ultra-thin 3D detector-For plasma diagnostics at JET and ITER tokamaks

International Nuclear Information System (INIS)

Garcia, Francisco; Pelligrini, G.; Balbuena, J.; Lozano, M.; Orava, R.; Ullan, M.

2009-01-01

A novel ultra-thin silicon detector called U3DTHIN has been designed and built for applications that range from Neutral Particle Analyzers (NPA) used in Corpuscular Diagnostics of High Temperature Plasma to very low X-ray spectroscopy. The main purpose of this detector is to provide a state-of-the-art solution to upgrade the current detector system of the NPAs at JET and also to pave the road for the future detection systems of the ITER experimental reactor. Currently the NPAs use a very thin scintillator-photomultiplier tube [F. Garcia, S.S. Kozlovsky, D.V. Balin, Background Properties of CEM, MCP and PMT detectors at n-γ irradiation. Preprint PNPI-2392, Gatchina, 2000, p. 9 ; F. Garcia, S.S. Kozlovsky, V.V. Ianovsky, Scintillation Detectors with Low Sensitivity to n-γ Background. Preprint PNPI-2391, Gatchina, 2000, p. 8 ], and their main drawbacks are poor energy resolution, intrinsic scintillator nonlinearity, and relative low count rate capability and finally poor signal-to-background discrimination for the low-energy channels. The proposed new U3DTHIN detector is based on very thin sensitive substrate, which will provide nearly 100% detection efficiency for ions and at the same time very low sensitivity for neutron and gamma backgrounds. To achieve a very fast collection of the charge carriers generated by the incident ions, a 3D electrode structure [S. Parker, C. Kenney, J. Segal, Nucl. Instr. and Meth. A 395 (1997) 328 ; G. Pellegrini, P. Roy, A. Al-Ajili, R. Bates, L. Haddad, M. Horn, K. Mathieson, J. Melone, V. O'Shea, K.M. Smith, Nucl. Instr. and Meth. A 487 (2002) 19 ] has been introduced in the sensitive volume of the detector. The geometry of the electrode is known to be rad-hard. One of the most innovative features of these detectors is the optimal combination of the thin entrance window and the sensitive substrate thickness, which allows a very large dynamic range for ion detection. GEANT4 simulations were performed to find the losses of energy in

Hadron-therapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

International Nuclear Information System (INIS)

Bouterfa, M.; Aouadi, K.; Bertrand, D.; Olbrechts, B.; Delamare, R.; Raskin, J. P.; Gil, E. C.; Flandre, D.

2011-01-01

Hadron-therapy has gained increasing interest for cancer treatment especially within the last decade. System commissioning and quality assurance procedures impose to monitor the particle beam using 2D dose measurements. Nowadays, several monitoring systems exist for hadron-therapy but all show a relatively high influence on the beam properties: indeed, most devices consist of several layers of materials that degrade the beam through scattering and energy losses. For precise treatment purposes, ultra-thin silicon strip detectors are investigated in order to reduce this beam scattering. We assess the beam size increase provoked by the Multiple Coulomb Scattering when passing through Si, to derive a target thickness. Monte-Carlo based simulations show a characteristic scattering opening angle lower than 1 mrad for thicknesses below 20 μm. We then evaluated the fabrication process feasibility. We successfully thinned down silicon wafers to thicknesses lower than 10 μm over areas of several cm 2 . Strip detectors are presently being processed and they will tentatively be thinned down to 20 μm. Moreover, two-dimensional TCAD simulations were carried out to investigate the beam detector performances on p-type Si substrates. Additionally, thick and thin substrates have been compared thanks to electrical simulations. Reducing the pitch between the strips increases breakdown voltage, whereas leakage current is quite insensitive to strips geometrical configuration. The samples are to be characterized as soon as possible in one of the IBA hadron-therapy facilities. For hadron-therapy, this would represent a considerable step forward in terms of treatment precision. (authors)

A silicon pixel detector prototype for the CLIC vertex detector

CERN Multimedia

AUTHOR|(INSPIRE)INSPIRE-00714258

2017-01-01

A silicon pixel detector prototype for CLIC, currently under study for the innermost detector surrounding the collision point. The detector is made of a High-Voltage CMOS sensor (top) and a CLICpix2 readout chip (bottom) that are glued to each other. Both parts have a size of 3.3 x 4.0 $mm^2$ and consist of an array of 128 x 128 pixels of 25 x 25 $\\micro m^2$ size.

Pixel Detectors for Particle Physics and Imaging Applications

CERN Document Server

Wermes, N

2003-01-01

Semiconductor pixel detectors offer features for the detection of radiation which are interesting for particle physics detectors as well as for imaging e.g. in biomedical applications (radiography, autoradiography, protein crystallography) or in Xray astronomy. At the present time hybrid pixel detectors are technologically mastered to a large extent and large scale particle detectors are being built. Although the physical requirements are often quite different, imaging applications are emerging and interesting prototype results are available. Monolithic detectors, however, offer interesting features for both fields in future applications. The state of development of hybrid and monolithic pixel detectors, excluding CCDs, and their different suitability for particle detection and imaging, is reviewed.

Silicon sensors for the upgrades of the CMS pixel detector

International Nuclear Information System (INIS)

Centis Vignali, Matteo

2015-12-01

The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accelerator and its injection chain. Two major upgrades will take place in the next years. The first upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2.10 34 cm -2 s -1 . A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5.10 34 cm -2 s -1 . As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The first upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout electronics that allow efficient data taking up to a luminosity of 2.10 34 cm -2 s -1 , twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at different institutes. Hamburg (University and DESY) is responsible for the production of 350 pixel modules. The second upgrade (phase II) of the pixel detector is foreseen for 2025. The innermost pixel layer of the upgraded detector will accumulate a radiation damage corresponding to an equivalent fluence of Φ eq =2.10 16 cm -2 and a dose of ∼10 MGy after an integrated luminosity of 3000 fb -1 . Several groups are investigating sensor designs and configurations able to withstand such high doses and fluences. This work is divided into two parts related to important aspects of the upgrades of the CMS pixel detector. For the phase I upgrade, a setup has been developed to provide an absolute energy calibration of the pixel modules that will constitute the detector. The calibration is obtained using monochromatic X-rays. The same setup is used to test the buffering capabilities of the modules' readout chip. The maximum rate experienced by the modules produced in

Operational Experience with the ATLAS Pixel Detector at LHC

CERN Document Server

Keil, M

2013-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus crucial for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via front-end chips bump-bonded to 1744 n-on-n silicon substrates. In this paper results from the successful operation of the Pixel Detector at the LHC will be presented, including calibration procedures, detector performance and measurements of radiation damage. The detector performance is excellent: more than 95% of the pixels are operational, noise occupancy and hit efficiency exceed the des...

Pixel detector readout chip

CERN Multimedia

1991-01-01

Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

Sensors for ultra-fast silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

2014-11-21

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

Sensors for ultra-fast silicon detectors

International Nuclear Information System (INIS)

Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

2014-01-01

We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

Detector performance of the ALICE silicon pixel detector

CERN Document Server

Cavicchioli, C

2011-01-01

The ALICE Silicon Pixel Detector (SPD) forms the two innermost layers of the ALICE Inner Tracking System (ITS). It consists of two barrel layers of hybrid silicon pixel detectors at radii of 39 and 76 mm. The physics targets of the ALICE experiment require that the material budget of the SPD is kept within approximate to 1\\%X(0) per layer. This has set some stringent constraints on the design and construction of the SPD. A unique feature of the ALICE SPD is that it is capable of providing a prompt trigger signal, called Fast-OR, which contributes to the L0 trigger decision. The pixel trigger system allows to apply a set of algorithms for the trigger selection, and its output is sent to the Central Trigger Processor (CTP). The detector has been installed in the experiment in summer 2007. During the first injection tests in June 2008 the SPD was able to record the very first sign of life of the LHC by registering secondary particles from the beam dumped upstream the ALICE experiment. In the following months the...

Upgrade of ATLAS ITk Pixel Detector

CERN Document Server

Huegging, Fabian; The ATLAS collaboration

2017-01-01

The high luminosity upgrade of the LHC (HL-LHC) in 2026 will provide new challenges to the ATLAS tracker. The current inner detector will be replaced with an entirely-silicon inner tracker (ITk) which will consist of a five barrel layer Pixel detector surrounded by a four barrel layer Strip detector. The expected high radiation levels are requiring the development of upgraded silicon sensors as well as new a front-end chip. The dense tracking environment will require finer granularity detectors and low mass global and local support structures. The data rates will require new technologies for high bandwidth data transmission and handling. The current status of the ITk ATLAS Pixel detector developments as well as different layout options will be reviewed.

Analysis of 3D stacked fully functional CMOS Active Pixel Sensor detectors

International Nuclear Information System (INIS)

Passeri, D; Servoli, L; Meroli, S

2009-01-01

The IC technology trend is to move from 3D flexible configurations (package on package, stacked dies) to real 3D ICs. This is mainly due to i) the increased electrical performances and ii) the cost of 3D integration which may be cheaper than to keep shrinking 2D circuits. Perspective advantages for particle tracking and vertex detectors applications in High Energy Physics can be envisaged: in this work, we will focus on the capabilities of the state-of-the-art vertical scale integration technologies, allowing for the fabrication of very compact, fully functional, multiple layers CMOS Active Pixel Sensor (APS) detectors. The main idea is to exploit the features of the 3D technologies for the fabrication of a ''stack'' of very thin and precisely aligned CMOS APS layers, leading to a single, integrated, multi-layers pixel sensor. The adoption of multiple-layers single detectors can dramatically reduce the mass of conventional, separated detectors (thus reducing multiple scattering issues), at the same time allowing for very precise measurements of particle trajectory and momentum. As a proof of concept, an extensive device and circuit simulation activity has been carried out, aiming at evaluate the suitability of such a kind of CMOS active pixel layers for particle tracking purposes.

The power supply system for the DEPFET pixel detector at BELLE II

International Nuclear Information System (INIS)

Rummel, Stefan

2013-01-01

The upgrade of the KEKB accelerator towards 8×10 35 cm −2 s −1 poses several challenges for the BELLE II detector. Especially the innermost detector will be faced with a significant radiation of several MRad per year as well as a high hit density. To cope with this a silicon pixel detector will be used for the inner layers of the silicon tracker. The pixel detector (PXD) consists of two layers of DEPFET active pixel sensors. The DEPFET technology has an unique set of advantages like low power dissipation in the active area, flexible device size, radiation hardness and a thinning procedure allowing to adjust the thickness of the device over a wide range. The two layers close to the interaction point together with a low material budget will improve the IP resolution by a factor of 2 compared to the previous installed silicon detector. In addition silicon stand-alone pattern recognition will be possible together with the four layers of double sided strip detectors (DSSD) of the strip detector. The PXD detector system consists of the DEPFET modules with integrated readout chips, the data handling hybrid receiving the data and sending them to compute nodes performing an online pattern recognition. Moreover the power supply system provides the supply voltages for the DEPFET from a position outside of the detector. The power distribution is designed to provide low output impedance over all frequencies and transient response with appropriate overshoots. The PXD pose several challenges to the power distribution system—number of voltages, tight requirements on regulation and noise. -- Highlights: ► The KEKB accelerator receive a luminosity upgrade towards 8×10 35 cm −2 s −1 . ► A two layer pixel detector based on the DEPFET technology will be installed. ► An improvement of a factor of 2 in. impact parameter resolution is expected. ► The 34 A dedicated power supply system for the detector is under development which aims for low noise, low output impedance

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

CERN Document Server

Fiorini, M; Morel, M; Petrucci, F; Marchetto, F; Garbolino, S; Cortina, E; Tiuraniemi, S; Ceccucci, A; Martin, E; Riedler, P; Martoiu, S; Ramusino, A C; Rinella, G A; Mapelli, A; Mazza, G; Noy, M; Jarron, P; Nuessle, G; Dellacasa, G; Kluge, A; Rivetti, A; Kaplon, J

2011-01-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly (<0.5\\% X(O) per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R\\&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 mu m CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction techniq...

Rework of flip chip bonded radiation pixel detectors

International Nuclear Information System (INIS)

Vaehaenen, S.; Heikkinen, H.; Pohjonen, H.; Salonen, J.; Savolainen-Pulli, S.

2008-01-01

In this paper, some practical aspects of reworking flip chip hybridized pixel detectors are discussed. As flip chip technology has been advancing in terms of placement accuracy and reliability, large-area hybrid pixel detectors have been developed. The area requirements are usually fulfilled by placing several readout chips (ROCs) on single sensor chip. However, as the number of ROCs increases, the probability of failure in the hybridization process and the ROC operation also increases. Because high accuracy flip chip bonding takes time, a significant part of the price of a pixel detector comes from the flip chip assembly process itself. As large-area detector substrates are expensive, and many flip chip placements are required, the price of an assembled detector can become very high. In a typical case, there is just one bad ROC (out of several) on a faulty detector to be replaced. Considering the high price of pixel detectors and the fact that reworking faulty ROCs does not take much longer than the original placement, it is worthwhile to investigate the feasibility of a rework process

Rework of flip chip bonded radiation pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Vaehaenen, S. [VTT MEMS and Micropackaging, Espoo 02150 (Finland)], E-mail: sami.vahanen@vtt.fi; Heikkinen, H.; Pohjonen, H.; Salonen, J.; Savolainen-Pulli, S. [VTT MEMS and Micropackaging, Espoo 02150 (Finland)

2008-06-11

In this paper, some practical aspects of reworking flip chip hybridized pixel detectors are discussed. As flip chip technology has been advancing in terms of placement accuracy and reliability, large-area hybrid pixel detectors have been developed. The area requirements are usually fulfilled by placing several readout chips (ROCs) on single sensor chip. However, as the number of ROCs increases, the probability of failure in the hybridization process and the ROC operation also increases. Because high accuracy flip chip bonding takes time, a significant part of the price of a pixel detector comes from the flip chip assembly process itself. As large-area detector substrates are expensive, and many flip chip placements are required, the price of an assembled detector can become very high. In a typical case, there is just one bad ROC (out of several) on a faulty detector to be replaced. Considering the high price of pixel detectors and the fact that reworking faulty ROCs does not take much longer than the original placement, it is worthwhile to investigate the feasibility of a rework process.

Test-beam activities and results for the ATLAS ITk pixel detector

CERN Document Server

Bisanz, Tobias; The ATLAS collaboration

2017-01-01

The Phase-II upgrade of the LHC will result in an increase of the instantaneous luminosity up to about 5×1034 cm−2s−1. To cope with the challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300~hits/FE/s as well as a fluence of 2×1016neqcm−2. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about 10~m2. These range from thin planar silicon, over 3D silicon, to active CMOS sensors. After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in ITk. The setups used in the ITk Pixel testbeam campaigns will be presented, inclu...

Integration of the CMS Phase 1 Pixel Detector

CERN Document Server

Kornmayer, Andreas

2018-01-01

During the extended year-end technical stop 2016/17 the CMS Pixel Detector has been replaced. The new Phase 1 Pixel Detector is designed for a luminosity that could exceed $\\text{L} = 2x10^{34} cm^{−2}s^{−1}$. With one additional layer in the barrel and the forward region of the new detector, combined with the higher hit rates as the LHC luminosity increases, these conditions called for an upgrade of the data acquisition system, which was realised based on the $\\mu$TCA standard. This contribution focuses on the experiences with integration of the new detector readout and control system and reports on the operational performance of the CMS Pixel detector.

Semiconductor Pixel detectors and their applications in life sciences

International Nuclear Information System (INIS)

Jakubek, J

2009-01-01

Recent advances in semiconductor technology allow construction of highly efficient and low noise pixel detectors of ionizing radiation. Steadily improving quality of front end electronics enables fast digital signal processing in each pixel which offers recording of more complete information about each detected quantum (energy, time, number of particles). All these features improve an extend applicability of pixel technology in different fields. Some applications of this technology especially for imaging in life sciences will be shown (energy and phase sensitive X-ray radiography and tomography, radiography with heavy charged particles, neutron radiography, etc). On the other hand a number of obstacles can limit the detector performance if not handled. The pixel detector is in fact an array of individual detectors (pixels), each of them has its own efficiency, energy calibration and also noise. The common effort is to make all these parameters uniform for all pixels. However an ideal uniformity can be never reached. Moreover, it is often seen that the signal in one pixel can affect the neighbouring pixels due to various reasons (e.g. charge sharing). All such effects have to be taken into account during data processing to avoid false data interpretation. A brief view into the future of pixel detectors and their applications including also spectroscopy, tracking and dosimetry is given too. Special attention is paid to the problem of detector segmentation in context of the charge sharing effect.

LISe pixel detector for neutron imaging

Energy Technology Data Exchange (ETDEWEB)

Herrera, Elan; Hamm, Daniel [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN (United States); Wiggins, Brenden [Technology Development, Y-12 National Security Complex, Oak Ridge, TN (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, TN (United States); Milburn, Rob [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN (United States); Burger, Arnold [Department of Physics and Astronomy, Vanderbilt University, Nashville, TN (United States); Department of Life and Physical Sciences, Fisk University, Nashville, TN (United States); Bilheux, Hassina [Chemical and Engineering Materials Division, Oak Ridge National Laboratory, Oak Ridge, TN (United States); Santodonato, Louis [Instrument and Source Division, Oak Ridge National Laboratory, Oak Ridge National Laboratory, Oak Ridge, TN (United States); Chvala, Ondrej [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN (United States); Stowe, Ashley [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN (United States); Technology Development, Y-12 National Security Complex, Oak Ridge, TN (United States); Department of Physics and Astronomy, Vanderbilt University, Nashville, TN (United States); Lukosi, Eric, E-mail: elukosi@utk.edu [Department of Nuclear Engineering, University of Tennessee, Knoxville, TN (United States)

2016-10-11

Semiconducting lithium indium diselenide, {sup 6}LiInSe{sub 2} or LISe, has promising characteristics for neutron detection applications. The 95% isotopic enrichment of {sup 6}Li results in a highly efficient thermal neutron-sensitive material. In this study, we report on a proof-of-principle investigation of a semiconducting LISe pixel detector to demonstrate its potential as an efficient neutron imager. The LISe pixel detector had a 4×4 of pixels with a 550 µm pitch on a 5×5×0.56 mm{sup 3} LISe substrate. An experimentally verified spatial resolution of 300 µm was observed utilizing a super-sampling technique.

Status of the CMS Phase I pixel detector upgrade

Energy Technology Data Exchange (ETDEWEB)

Spannagel, S., E-mail: simon.spannagel@desy.de

2016-09-21

A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These improvements allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.

Status of the CMS Phase I Pixel Detector Upgrade

CERN Document Server

Spannagel, Simon

2016-09-21

A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase~I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a significantly reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These improvements allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. This contribution gives an overview of the design of the upgraded pixel detector and the status of the upgrade project, and presents test beam performance measurements of the production read-out chip.

Diamond and silicon pixel detectors in high radiation environments

Energy Technology Data Exchange (ETDEWEB)

Tsung, Jieh-Wen

2012-10-15

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

Diamond and silicon pixel detectors in high radiation environments

International Nuclear Information System (INIS)

Tsung, Jieh-Wen

2012-10-01

Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10 16 particles per cm 2 , which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10 15 particles per cm 2 .

LePix—A high resistivity, fully depleted monolithic pixel detector

International Nuclear Information System (INIS)

Giubilato, P.; Bisello, D.; Chalmet, P.; Denes, P.; Kloukinas, K.; Mattiazzo, S.; Marchioro, A.; Mugnier, H.; Pantano, D.; Potenza, A.; Rivetti, A.; Rousset, J.; Snoeys, W.; Tindall, C.

2013-01-01

The LePix project explores monolithic pixel sensors fabricated in a 90 nm CMOS technology built over a lightly doped substrate. This approach keeps the advantages usually offered by Monolithic Active Pixel Sensors (MAPS), like a low input capacitance, having a single piece detector and using a standard CMOS production line, and adds the benefit of charge collection by drift from a depleted region several tens of microns deep into the substrate, therefore providing an excellent signal to noise ratio and a radiation tolerance superior to conventional un-depleted MAPS. Such sensors are expected to offer significant cost savings and reduction of power consumption for the same performance, leading to the use of much less material in the detector (less cooling and less copper), addressing one of the main limitations of present day particle tracking systems. The latest evolution of the project uses detectors thinned down to 50 μm to obtain back illuminated sensors operated in full depletion mode. By back-processing the chip and collecting the charge from the full substrate it is hence possible to efficiently detect soft X-rays up to 10 keV. Test results from first successfully processed detectors will be presented and discussed

DEPFET: A silicon pixel detector for future colliders. Fundamentals, characterization and performance

CERN Document Server

Marinas Pardo, Carlos Manuel; Vos, Marcel Andre

2011-01-01

The future electron-positron colliders, either breaking the energy frontier (like ILC or CLIC) or the luminosity frontier (SuperKEKB), impose unprecedented constraints over the new generation of detectors that will be operated in those facilities. In particular, the vertex detectors must be designed for an efficient flavour tagging and excellent vertex reconstruction. To cope with these requirements, highly pixelated sensors with a fast readout, very low material budget and low power consumption must be developed. Although the combination of these factors is a substantial challenge, the DEPFET Collaboration has developed a new generation of sensors that can be operated in such a harsh environment. The DEpleted P-channel Field Effect Transistor (DEPFET) is a pixel sensor that combines detection and internal amplification at the same time. With such configuration, thin detectors with good signal-to-noise ratio and low power consumption can be produced. In this thesis, the optimization and performance of two gen...

Amorphous silicon pixel radiation detectors and associated thin film transistor electronics readout

International Nuclear Information System (INIS)

Perez-Mendez, V.; Cho, G.; Drewery, J.; Jing, T.; Kaplan, S.N.; Mireshghi, A.; Wildermuth, D.; Goodman, C.; Fujieda, I.

1992-07-01

We describe the characteristics of thin (1 μm) and thick (> 30 μm) hydrogenated amorphous silicon p-i-n diodes which are optimized for detecting and recording the spatial distribution of charged particles, x-ray, γ rays and thermal neutrons. For x-ray, γ ray, and charged particle detection we can use thin p-i-n photosensitive diode arrays coupled to evaporated layers of suitable scintillators. For thermal neutron detection we use thin (2∼5 μm) gadolinium converters on 30 μm thick a-Si:H diodes. For direct detection of minimum ionizing particles and others with high resistance to radiation damage, we use the thick p-i-n diode arrays. Diode and amorphous silicon readouts as well as polysilicon pixel amplifiers are described

Characterization of the CMS Pixel Detectors

CERN Document Server

Gu, Weihua

2002-01-01

In 2005 the Large Hadron Collider (LHC) will start the pp collisions at a high luminosity and at a center of mass energy of 14 TeV. The primary goal of the experimental programme is the search of the Higgs boson(s) and the supersymmetric particles. The programme is also proposed to detect a range of diverse signatures in order to provide guidance for future physics. The pixel detector system makes up the innermost part of the CMS experiment, which is one of the two general purpose detectors at the LHC. The main tasks of the system are vertex detection and flavor tagging. The high luminosity and the high particle multiplicity as well as the small bunch spacing at the LHC impose great challenges on the pixel detectors: radiation hardness of sensors and electronics, fast signal processing and a high granularity are the essential requirements. This thesis concentrates on the study of the suitability of two test stands, which are implemented to characterize the CMS pixel detectors: one is con-cerned with test puls...

Characterization of Ni/SnPb-TiW/Pt Flip Chip Interconnections in Silicon Pixel Detector Modules

CERN Document Server

Karadzhinova, Aneliya; Härkönen, Jaakko; Luukka, Panja-riina; Mäenpää, Teppo; Tuominen, Eija; Haeggstrom, Edward; Kalliopuska, Juha; Vahanen, Sami; Kassamakov, Ivan

2014-01-01

In contemporary high energy physics experiments, silicon detectors are essential for recording the trajectory of new particles generated by multiple simultaneous collisions. Modern particle tracking systems may feature 100 million channels, or pixels, which need to be individually connected to read-out chains. Silicon pixel detectors are typically connected to readout chips by flip-chip bonding using solder bumps. High-quality electro-mechanical flip-chip interconnects minimizes the number of dead read-out channels in the particle tracking system. Furthermore, the detector modules must endure handling during installation and withstand heat generation and cooling during operation. Silicon pixel detector modules were constructed by flip-chip bonding 16 readout chips to a single sensor. Eutectic SnPb solder bumps were deposited on the readout chips and the sensor chips were coated with TiW/Pt thin film UBM (under bump metallization). The modules were assembled at Advacam Ltd, Finland. We studied the uniformity o...

First large DEPFET pixel modules for the Belle II Pixel Detector

Energy Technology Data Exchange (ETDEWEB)

Mueller, Felix; Avella, Paola; Kiesling, Christian; Koffmane, Christian; Moser, Hans-Guenther; Valentan, Manfred [Max-Planck-Institut fuer Physik, Muenchen (Germany); Andricek, Ladislav; Richter, Rainer [Halbleiterlabor der Max-Planck-Gesellschaft, Muenchen (Germany); Collaboration: Belle II-Collaboration

2016-07-01

DEPFET pixel detectors offer excellent signal to noise ratio, resolution and low power consumption with a low material budget. They will be used at Belle II and are a candidate for an ILC vertex detector. The pixels are integrated in a monolithic piece of silicon which also acts as PCB providing the signal and control routings for the ASICs on top. The first prototype DEPFET sensor modules for Belle II have been produced. The modules have 192000 pixels and are equipped with SMD components and three different kinds of ASICs to control and readout the pixels. The entire readout chain has to be studied; the metal layer interconnectivity and routings need to be verified. The modules are fully characterized, and the operation voltages and control sequences of the ASICs are investigated. An overview of the DEPFET concept and first characterization results is presented.

Test-beam activities and results for the ATLAS ITk pixel detector

Science.gov (United States)

Bisanz, T.

2017-12-01

The Phase-II upgrade of the LHC aims at an increase of the instantaneous luminosity up to about 5×1034 cm-2 s-1. To cope with the resulting challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300 hits/FE/s as well as a fluence of around 2×1016 neq cm-2. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about 10 m2. These range from thin planar silicon, 3D silicon, to active CMOS sensors. After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in ITk. The setups used in the ITk Pixel testbeam campaigns will be presented, including the common track reconstruction and analysis software. Results from the latest measurements will be shown, highlighting some of the developments and challenges for the ITk Pixel sensors.

ATLAS Pixel Detector Design For HL-LHC

CERN Document Server

Smart, Ben; The ATLAS collaboration

2016-01-01

The ATLAS Inner Detector will be replaced for the High-Luminosity LHC (HL-LHC) running in 2026. The new Inner Detector will be called the Inner Tracker (ITk). The ITk will cover an extended eta-range: at least to |eta|<3.2, and likely up to |eta|<4.0. The ITk will be an all-Silicon based detector, consisting of a Silicon strip detector outside of a radius of 362mm, and a Silicon pixel detector inside of this radius. Several novel designs are being considered for the ITk pixel detector, to cope with high-eta charged particle tracks. These designs are grouped into 'extended' and 'inclined' design-types. Extended designs have long pixel staves with sensors parallel to the beamline. High-eta particles will therefore hit these sensors at shallow angles, leaving elongated charge clusters. The length of such a charge cluster can be used to estimate the angle of the passing particle. This information can then be used in track reconstruction to improve tracking efficiency and reduce fake rates. Inclined designs ...

CVD diamond pixel detectors for LHC experiments

Energy Technology Data Exchange (ETDEWEB)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N

1999-08-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

CVD diamond pixel detectors for LHC experiments

International Nuclear Information System (INIS)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knoepfle, K.T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L.S.; Palmieri, V.G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A.M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J.C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.

1999-01-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described

Development of thin pixel sensors and a novel interconnection technology for the SLHC

International Nuclear Information System (INIS)

Macchiolo, A.; Andricek, L.; Beimforde, M.; Dubbert, J.; Ghodbane, N.; Kortner, O.; Kroha, H.; Moser, H.G.; Nisius, R.; Richter, R.H.

2008-01-01

We present an R and D activity aiming to develop a new detector concept in the framework of the ATLAS pixel detector upgrade in view of the Super-LHC. The new devices combine 75-150 μm thick pixels sensors with a vertical integration technology. A new production of thin pixel sensors on n- and p-type material is under way at the MPI Semiconductor Laboratory. These devices will be connected to the ATLAS read-out electronics with the new Solid-Liquid InterDiffusion technique as an alternative to the bump-bonding process. We also plan for the signals to be extracted from the back of the electronics wafer through Inter-Chip-Vias. The compatibility of the Solid-Liquid InterDiffusion process with the silicon sensor functionality has already been demonstrated by measurements on two wafers hosting diodes with an active thickness of 50 μm

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

Science.gov (United States)

Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.; Aglieri Rinella, G.; Rivetti, A.; Tiuraniemi, S.

2011-02-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R&D program is overviewed and results from the prototype read-out chips test are presented.

The pin pixel detector--X-ray imaging

CERN Document Server

Bateman, J E; Derbyshire, G E; Duxbury, D M; Marsh, A S; Simmons, J E; Stephenson, R

2002-01-01

The development and testing of a soft X-ray gas pixel detector, which uses connector pins for the anodes is reported. Based on a commercial 100 pin connector block, a prototype detector of aperture 25.4 mm centre dot 25.4 mm can be economically fabricated. The individual pin anodes all show the expected characteristics of small gas detectors capable of counting rates reaching 1 MHz per pin. A 2-dimensional resistive divide readout system has been developed to permit the imaging properties of the detector to be explored in advance of true pixel readout electronics.

Magnetic Microcalorimeter (MMC) Gamma Detectors with Ultra-High Energy Resolution

Energy Technology Data Exchange (ETDEWEB)

Friedrich, Stephen [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2018-01-19

The goal of this LCP is to develop ultra-high resolution gamma detectors based on magnetic microcalorimeters (MMCs) for accurate non-destructive analysis (NDA) of nuclear materials. For highest energy resolution, we will introduce erbium-doped silver (Ag:Er) as a novel sensor material, and implement several geometry and design changes to improve the signal-to-noise ratio. The detector sensitivity will be increased by developing arrays of 32 Ag:Er pixels read out by 16 SQUID preamplifiers, and by developing a cryogenic Compton veto to reduce the spectral background. Since best MMC performance requires detector operation at ~10 mK, we will purchase a dilution refrigerator with a base temperature <10 mK and adapt it for MMC operation. The detector performance will be tested with radioactive sources of interest to the safeguards community.

CVD diamond pixel detectors for LHC experiments

CERN Document Server

Wedenig, R; Bauer, C; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Friedl, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Knöpfle, K T; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Pan, L S; Palmieri, V G; Pernicka, Manfred; Peitz, A; Pirollo, S; Polesello, P; Pretzl, Klaus P; Procario, M; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Runólfsson, O; Russ, J; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Stone, R; Suter, B; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Vittone, E; Wagner, A; Walsh, A M; Weilhammer, Peter; White, C; Zeuner, W; Ziock, H J; Zöller, M

1999-01-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described. (9 refs).

Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

CERN Document Server

Beimforde, Michael

To extend the discovery potential of the experiments at the LHC accelerator a luminosity upgrade towards the super LHC (sLHC) with an up to ten-fold peak luminosity is planned. Within this thesis a new module concept was developed and evaluated for the operation within an ATLAS pixel detector at the sLHC. This module concept utilizes a novel thin sensor production process for thin n-in-p silicon sensors which potentially allow for a higher radiation hardness at a reduced cost. Furthermore, the new 3D-integration technology ICV-SLID is explored which will allow for increasing the active area of the modules and hence, for employing the modules in the innermost layer of the upgraded ATLAS pixel detector.

Development of an Indium Bump Bond Process for Silicon Pixel Detectors at PSI

CERN Document Server

Brönnimann, C; Gobrecht, J; Heising, S; Horisberger, M; Horisberger, R P; Kästli, H C; Lehmann, J; Rohe, T; Streuli, S; Broennimann, Ch.

2006-01-01

The hybrid pixel detectors used in the high energy physics experiments currently under construction use a three dimensional connection technique, the so-called bump bonding. As the pitch below 100um, required in these applications, cannot be fullfilled with standard industrial processes (e.g. the IBM C4 process), an in-house bump bond process using reflown indium bumps was developed at PSI as part of the R&D for the CMS-pixel detector. The bump deposition on the sensor is performed in two subsequent lift-off steps. As the first photolithographic step a thin under bump metalization (UBM) is sputtered onto bump pads. It is wettable by indium and defines the diameter of the bump. The indium is evaporated via a second photolithographic step with larger openings and is reflown afterwards. The height of the balls is defined by the volume of the indium. On the readout chip only one photolithographic step is carried out to deposit the UBM and a thin indium layer for better adhesion. After mating both parts a seco...

Small-Scale Readout System Prototype for the STAR PIXEL Detector

International Nuclear Information System (INIS)

Szelezniak, Michal; Anderssen, Eric; Greiner, Leo; Matis, Howard; Ritter, Hans Georg; Stezelberger, Thorsten; Sun, Xiangming; Thomas, James; Vu, Chinh; Wieman, Howard

2008-01-01

Development and prototyping efforts directed towards construction of a new vertex detector for the STAR experiment at the RHIC accelerator at BNL are presented. This new detector will extend the physics range of STAR by allowing for precision measurements of yields and spectra of particles containing heavy quarks. The innermost central part of the new detector is a high resolution pixel-type detector (PIXEL). PIXEL requirements are discussed as well as a conceptual mechanical design, a sensor development path, and a detector readout architecture. Selected progress with sensor prototypes dedicated to the PIXEL detector is summarized and the approach chosen for the readout system architecture validated in tests of hardware prototypes is discussed

Operational Experience with the ATLAS Pixel Detector at the LHC

CERN Document Server

Keil, M; The ATLAS collaboration

2012-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including calibration procedures, timing optimization and detector performance. The detector performance is excellent: ~96 % of the pixels are operational, noise occupancy and hit efficiency e...

Operational Experience with the ATLAS Pixel Detector at the LHC

CERN Document Server

Keil, M; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Operational experience with the ATLAS Pixel Detector at the LHC

CERN Document Server

Hirschbuehl, D; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.7% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Operational experience with the ATLAS Pixel Detector at the LHC

CERN Document Server

Lapoire, C; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Operational Experience with the ATLAS Pixel Detector at the LHC

CERN Document Server

Lapoire, C; The ATLAS collaboration

2012-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as B-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures and detector performance. The detector performance is excellent: 96.2% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification.

Operational Experience with the ATLAS Pixel Detector at the LHC

CERN Document Server

Keil, M

2012-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper results from the successful operation of the Pixel Detector at the LHC will be presented, including calibration procedures, timing optimization and detector performance. The detector performance is excellent: approximately 97% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Operational experience with the ATLAS Pixel Detector at the LHC

CERN Document Server

Ince, T; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 96.8% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Operational experience with the ATLAS Pixel detector at the LHC

CERN Document Server

Deluca, C; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this paper, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5\\% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, ...

Operational Experience with the ATLAS Pixel Detector at the LHC

CERN Document Server

Lange, C; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump- bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, a...

Operational experience with the ATLAS Pixel detector at the LHC

CERN Document Server

Deluca, C; The ATLAS collaboration

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: 97,5% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, an...

Charge sharing in silicon pixel detectors

CERN Document Server

Mathieson, K; Seller, P; Prydderch, M L; O'Shea, V; Bates, R L; Smith, K M; Rahman, M

2002-01-01

We used a pixellated hybrid silicon X-ray detector to study the effect of the sharing of generated charge between neighbouring pixels over a range of incident X-ray energies, 13-36 keV. The system is a room temperature, energy resolving detector with a Gaussian FWHM of 265 eV at 5.9 keV. Each pixel is 300 mu m square, 300 mu m deep and is bump bonded to matching read out electronics. The modelling packages MEDICI and MCNP were used to model the complete X-ray interaction and the subsequent charge transport. Using this software a model is developed which reproduces well the experimental results. The simulations are then altered to explore smaller pixel sizes and different X-ray energies. Charge sharing was observed experimentally to be 2% at 13 keV rising to 4.5% at 36 keV, for an energy threshold of 4 keV. The models predict that up to 50% of charge may be lost to the neighbouring pixels, for an X-ray energy of 36 keV, when the pixel size is reduced to 55 mu m.

Precision tracking with a single gaseous pixel detector

NARCIS (Netherlands)

Tsigaridas, S.; van Bakel, N.; Bilevych, Y.; Gromov, V.; Hartjes, F.; Hessey, N.P.; de Jong, P.; Kluit, R.

2015-01-01

The importance of micro-pattern gaseous detectors has grown over the past few years after successful usage in a large number of applications in physics experiments and medicine. We develop gaseous pixel detectors using micromegas-based amplification structures on top of CMOS pixel readout chips.

New pixelized Micromegas detector for the COMPASS experiment

International Nuclear Information System (INIS)

Neyret, D; Anfreville, M; Bedfer, Y; Burtin, E; D'Hose, N; Giganon, A; Kunne, F; Magnon, A; Marchand, C; Paul, B; Platchkov, S; Vandenbroucke, M; Ketzer, B; Konorov, I

2009-01-01

New Micromegas (Micro-mesh gaseous detectors) are being developed in view of the future physics projects planned by the COMPASS collaboration at CERN. Several major upgrades compared to present detectors are being studied: detectors standing five times higher luminosity with hadron beams, detection of beam particles (flux up to a few hundred of kHz/mm 2 , 10 times larger than for the present detectors) with pixelized read-out in the central part, light and integrated electronics, and improved robustness. Studies were done with the present detectors moved in the beam, and two first pixelized prototypes are being tested with muon and hadron beams in real conditions at COMPASS. We present here this new project and report on two series of tests, with old detectors moved into the beam and with pixelized prototypes operated in real data taking condition with both muon and hadron beams.

Performance of the CMS Phase 1 Pixel Detector

CERN Document Server

Akgun, Bora

2018-01-01

It is anticipated that the LHC accelerator will reach and exceed the luminosity of L = 2$\\times$10$^{34}$cm$^{-2}$s$^{-1}$ during the LHC Run 2 period until 2023. At this higher luminosity and increased hit occupancies the CMS phase-0 pixel detector would have been subjected to severe dead time and inefficiencies introduced by limited buffers in the analog read-out chip and effects of radiation damage in the sensors. Therefore a new pixel detector has been built and replaced the phase-0 detector in the 2016/17 LHC extended year-end technical stop. The CMS phase-1 pixel detector features four central barrel layers and three end-cap disks in forward and backward direction for robust tracking performance, and a significantly reduced overall material budget including new cooling and powering schemes. The design of the new front-end readout chip comprises larger data buffers, an increased transmission bandwidth, and low-threshold comparators. These improvements allow the new pixel detector to sustain and improve t...

Effects of bulk and surface conductivity on the performance of CdZnTe pixel detectors

DEFF Research Database (Denmark)

Bolotnikov, A.E.; Chen, C.M.H.; Cook, W.R.

2002-01-01

, the existence of a thin (10-100 A) oxide layer on the surface of CZT, formed during the fabrication process, affects both bulk and surface leakage currents. We demonstrate that the measured I-V dependencies of bulk current can be explained by considering the CZT detector as a metal-semiconductor-metal system......-collection efficiency in detectors with multicontact geometry; some fraction of the electric field lines that originated on the cathode intersects the surface areas between the pixel contacts where the charge produced by an ionizing particle gets trapped. To overcome this effect, we place a grid of thin electrodes...

High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

CERN Document Server

Peric,I et al.

2013-01-01

High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 1015 neq=cm2 , nearly 100% detection efficiency and a spatial resolution of about 3 μm were demonstrated. Since 2011 the HV detectors have first applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process.

Operational Experience with the CMS Pixel Detector

CERN Document Server

INSPIRE-00205212

2015-05-15

In the first LHC running period the CMS-pixel detector had to face various operational challenges and had to adapt to the rapidly changing beam conditions. In order to maximize the physics potential and the quality of the data, online and offline calibrations were performed on a regular basis. The detector performed excellently with an average hit efficiency above 99\\% for all layers and disks. In this contribution the operational challenges of the silicon pixel detector in the first LHC run and the current long shutdown are summarized and the expectations for 2015 are discussed.

Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

Energy Technology Data Exchange (ETDEWEB)

Andricek, L. [Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, 81739 Muenchen (Germany); Beimforde, M., E-mail: mibei@mpp.mpg.de [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany); Macchiolo, A. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany); Moser, H.-G. [Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, 81739 Muenchen (Germany); Nisius, R. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, 80805 Muenchen (Germany); Richter, R.H. [Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, 81739 Muenchen (Germany)

2011-04-21

A new pixel module concept is presented utilizing thin sensors and a novel vertical integration technique for the ATLAS pixel detector in view of the foreseen LHC luminosity upgrades. A first set of pixel sensors with active thicknesses of 75 and 150{mu}m has been produced from wafers of standard thickness using a thinning process developed at the Max-Planck-Institut Halbleiterlabor (HLL) and the Max-Planck-Institut fuer Physik (MPP). Pre-irradiation characterizations of these sensors show a very good device yield and high break down voltage. First proton irradiations up to a fluence of 10{sup 15} n{sub eq} cm{sup -2} have been carried out and their impact on the electrical properties of thin sensors has been studied. The novel ICV-SLID vertical integration technology will allow for routing signals vertically to the back side of the readout chips. With this, four-side buttable detector devices with an increased active area fraction are made possible. A first production of SLID test structures was performed and showed a high connection efficiency for different pad sizes and a mild sensitivity to disturbances of the surface planarity.

Development of thin sensors and a novel interconnection technology for the upgrade of the ATLAS pixel system

International Nuclear Information System (INIS)

Andricek, L.; Beimforde, M.; Macchiolo, A.; Moser, H.-G.; Nisius, R.; Richter, R.H.

2011-01-01

A new pixel module concept is presented utilizing thin sensors and a novel vertical integration technique for the ATLAS pixel detector in view of the foreseen LHC luminosity upgrades. A first set of pixel sensors with active thicknesses of 75 and 150μm has been produced from wafers of standard thickness using a thinning process developed at the Max-Planck-Institut Halbleiterlabor (HLL) and the Max-Planck-Institut fuer Physik (MPP). Pre-irradiation characterizations of these sensors show a very good device yield and high break down voltage. First proton irradiations up to a fluence of 10 15 n eq cm -2 have been carried out and their impact on the electrical properties of thin sensors has been studied. The novel ICV-SLID vertical integration technology will allow for routing signals vertically to the back side of the readout chips. With this, four-side buttable detector devices with an increased active area fraction are made possible. A first production of SLID test structures was performed and showed a high connection efficiency for different pad sizes and a mild sensitivity to disturbances of the surface planarity.

Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

International Nuclear Information System (INIS)

Mathes, Markus

2008-12-01

Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10 16 particles per cm 2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 μm 2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm 2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm 2 ). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

Monitoring radiation damage in the ATLAS pixel detector

CERN Document Server

Schorlemmer, André Lukas; Quadt, Arnulf; Große-Knetter, Jörn; Rembser, Christoph; Di Girolamo, Beniamino

2014-11-05

Radiation hardness is one of the most important features of the ATLAS pixel detector in order to ensure a good performance and a long lifetime. Monitoring of radiation damage is crucial in order to assess and predict the expected performance of the detector. Key values for the assessment of radiation damage in silicon, such as the depletion voltage and depletion depth in the sensors, are measured on a regular basis during operations. This thesis summarises the monitoring program that is conducted in order to assess the impact of radiation damage and compares it to model predictions. In addition, the physics performance of the ATLAS detector highly depends on the amount of disabled modules in the ATLAS pixel detector. A worrying amount of module failures was observed during run I. Thus it was decided to recover repairable modules during the long shutdown (LS1) by extracting the pixel detector. The impact of the module repairs and module failures on the detector performance is analysed in this thesis.

Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

Energy Technology Data Exchange (ETDEWEB)

Wuestling, Sascha, E-mail: sascha.wuestling@kit.ed [Forschungszentrum Karlsruhe, Institut fuer Prozessdatenverarbeitung und Elektronik, Postfach 3640, 76021 Karlsruhe (Germany); Fraenkle, F.; Habermehl, F.; Renschler, P. [Universitaet Karlsruhe - TH, Institut fuer Experimentelle Kernphysik, Postfach 6980, 76128 Karlsruhe (Germany); Steidl, M [Forschungszentrum Karlsruhe, Institut fuer Kernphysik, Postfach 3640, 76021 Karlsruhe (Germany)

2010-12-11

The KATRIN neutrino mass experiment is based on a precise energy measurement ({Delta}E/E=5x10{sup -5}) of electrons emerging from tritium beta decay (E{sub max}=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area ({approx}80 cm{sup 2}), a certain energy resolution ({Delta}E=600 eV - 18.6 keV) but also a certain spatial resolution ({approx}3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm{sup 2}) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. , this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement . The detector allows for background searches with a sensitivity as low as 1.3x10{sup -3} cps/cm{sup 2} in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10{sup 5} and the search for ultra low Penning discharge emissions.

Results from a 64-pixel PIN-diode detector system for low-energy beta-electrons

Science.gov (United States)

Wuestling, Sascha; Fraenkle, F.; Habermehl, F.; Renschler, P.; Steidl, M.

2010-12-01

The KATRIN neutrino mass experiment is based on a precise energy measurement (Δ E/ E=5×10 -5) of electrons emerging from tritium beta decay ( Emax=18.6 keV). This is done by a large electrostatic retarding spectrometer (MAC-E Filter), which is followed by an electron detector. Key requirements for this detector are a large sensitive area (˜80 cm 2), a certain energy resolution (Δ E=600 eV @ 18.6 keV) but also a certain spatial resolution (˜3 mm), which leads to a multi-pixel design. As a tentative design on the way to the final detector, but also for operational service on the so-called pre-spectrometer experiment, a detector system with a reduced size (16 cm 2) and a reduced pixel number (64), making use of a monolithic segmented silicon PIN diode, was designed and built. While the design and very first measurements have been presented in Wuestling et al. [6], this publication shows the operational performance of the detector system. The robust concept of the electronics allowed adaptation to mechanically different experimental setups. The spacial resolution of the detector system proved to be essential in examining Penning trap induced background and other effects in the pre-spectrometer experiment. The detector performance test runs include energy resolution and calibration, background rates, correlation between pixels (crosstalk), spatially resolved rate analysis, and a dead-layer measurement [7]. The detector allows for background searches with a sensitivity as low as 1.3×10 -3 cps/cm 2 in the energy range of 20 keV. This allows the pre-spectrometer to be characterized with e-gun illumination with a signal to background ratio of better than 10 5 and the search for ultra low Penning discharge emissions.

Response of a hybrid pixel detector (MEDIPIX3) to different radiation sources for medical applications

Energy Technology Data Exchange (ETDEWEB)

Chumacero, E. Miguel; De Celis Alonso, B.; Martínez Hernández, M. I.; Vargas, G.; Moreno Barbosa, E., E-mail: emoreno.emb@gmail.com [Facultad de Ciencias Físico Matemáticas, Benemérita Universidad Autónoma de Puebla, Av. San Claudio y Rio Verde, Puebla (Mexico); Moreno Barbosa, F. [Hospital General del Sur Hospital de la Mujer, Puebla (Mexico)

2014-11-07

The development in semiconductor CMOS technology has enabled the creation of sensitive detectors for a wide range of ionizing radiation. These devices are suitable for photon counting and can be used in imaging and tomography X-ray diagnostics. The Medipix[1] radiation detection system is a hybrid silicon pixel chip developed for particle tracking applications in High Energy Physics. Its exceptional features (high spatial and energy resolution, embedded ultra fast readout, different operation modes, etc.) make the Medipix an attractive device for applications in medical imaging. In this work the energy characterization of a third-generation Medipix chip (Medipix3) coupled to a silicon sensor is presented. We used different radiation sources (strontium 90, iron 55 and americium 241) to obtain the response curve of the hybrid detector as a function of energy. We also studied the contrast of the Medipix as a measure of pixel noise. Finally we studied the response to fluorescence X rays from different target materials (In, Pd and Cd) for the two data acquisition modes of the chip; single pixel mode and charge summing mode.

The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

International Nuclear Information System (INIS)

Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.

2011-01-01

The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( 0 per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R and D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R and D program is overviewed and results from the prototype read-out chips test are presented.

Simulation study of pixel detector charge digitization

Science.gov (United States)

Wang, Fuyue; Nachman, Benjamin; Sciveres, Maurice; Lawrence Berkeley National Laboratory Team

2017-01-01

Reconstruction of tracks from nearly overlapping particles, called Tracking in Dense Environments (TIDE), is an increasingly important component of many physics analyses at the Large Hadron Collider as signatures involving highly boosted jets are investigated. TIDE makes use of the charge distribution inside a pixel cluster to resolve tracks that share one of more of their pixel detector hits. In practice, the pixel charge is discretized using the Time-over-Threshold (ToT) technique. More charge information is better for discrimination, but more challenging for designing and operating the detector. A model of the silicon pixels has been developed in order to study the impact of the precision of the digitized charge distribution on distinguishing multi-particle clusters. The output of the GEANT4-based simulation is used to train neutral networks that predict the multiplicity and location of particles depositing energy inside one cluster of pixels. By studying the multi-particle cluster identification efficiency and position resolution, we quantify the trade-off between the number of ToT bits and low-level tracking inputs. As both ATLAS and CMS are designing upgraded detectors, this work provides guidance for the pixel module designs to meet TIDE needs. Work funded by the China Scholarship Council and the Office of High Energy Physics of the U.S. Department of Energy under contract DE-AC02-05CH11231.

The FPGA Pixel Array Detector

International Nuclear Information System (INIS)

Hromalik, Marianne S.; Green, Katherine S.; Philipp, Hugh T.; Tate, Mark W.; Gruner, Sol M.

2013-01-01

A proposed design for a reconfigurable x-ray Pixel Array Detector (PAD) is described. It operates by integrating a high-end commercial field programmable gate array (FPGA) into a 3-layer device along with a high-resistivity diode detection layer and a custom, application-specific integrated circuit (ASIC) layer. The ASIC layer contains an energy-discriminating photon-counting front end with photon hits streamed directly to the FPGA via a massively parallel, high-speed data connection. FPGA resources can be allocated to perform user defined tasks on the pixel data streams, including the implementation of a direct time autocorrelation function (ACF) with time resolution down to 100 ns. Using the FPGA at the front end to calculate the ACF reduces the required data transfer rate by several orders of magnitude when compared to a fast framing detector. The FPGA-ASIC high-speed interface, as well as the in-FPGA implementation of a real-time ACF for x-ray photon correlation spectroscopy experiments has been designed and simulated. A 16×16 pixel prototype of the ASIC has been fabricated and is being tested. -- Highlights: ► We describe the novelty and need for the FPGA Pixel Array Detector. ► We describe the specifications and design of the Diode, ASIC and FPGA layers. ► We highlight the Autocorrelation Function (ACF) for speckle as an example application. ► Simulated FPGA output calculates the ACF for different input bitstreams to 100 ns. ► Reduced data transfer rate by 640× and sped up real-time ACF by 100× other methods.

Sensor development for the CMS pixel detector

CERN Document Server

Bölla, G; Horisberger, R P; Kaufmann, R; Rohe, T; Roy, A

2002-01-01

The CMS experiment which is currently under construction at the Large Hadron Collider (LHC) at CERN (Geneva, Switzerland) will contain a pixel detector which provides in its final configuration three space points per track close to the interaction point of the colliding beams. Because of the harsh radiation environment of the LHC, the technical realization of the pixel detector is extremely challenging. The readout chip as the most damageable part of the system is believed to survive a particle fluence of 6x10 sup 1 sup 4 n sub e sub q /cm sup 2 (All fluences are normalized to 1 MeV neutrons and therefore all components of the hybrid pixel detector have to perform well up to at least this fluence. As this requires a partially depleted operation of the silicon sensors after irradiation-induced type inversion of the substrate, an ''n in n'' concept has been chosen. In order to perform IV-tests on wafer level and to hold accidentally unconnected pixels close to ground potential, a resistive path between the pixe...

SLHC upgrade plans for the ATLAS pixel detector

International Nuclear Information System (INIS)

Sicho, Petr

2009-01-01

The ATLAS pixel detector is an 80 million channels silicon tracking system designed to detect charged tracks and secondary vertices with very high precision. An upgrade of the ATLAS pixel detector is presently being considered, enabling to cope with higher luminosity at Super Large Hadron Collider (SLHC). The increased luminosity leads to extremely high radiation doses in the innermost region of the ATLAS tracker. Options considered for a new detector are discussed, as well as some important R and D activities, such as investigations towards novel detector geometries and novel processes.

Three-dimensional cascaded system analysis of a 50 µm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

Science.gov (United States)

Zhao, C; Vassiljev, N; Konstantinidis, A C; Speller, R D; Kanicki, J

2017-03-07

High-resolution, low-noise x-ray detectors based on the complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been developed and proposed for digital breast tomosynthesis (DBT). In this study, we evaluated the three-dimensional (3D) imaging performance of a 50 µm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). The two-dimensional (2D) angle-dependent modulation transfer function (MTF), normalized noise power spectrum (NNPS), and detective quantum efficiency (DQE) were experimentally characterized and modeled using the cascaded system analysis at oblique incident angles up to 30°. The cascaded system model was extended to the 3D spatial frequency space in combination with the filtered back-projection (FBP) reconstruction method to calculate the 3D and in-plane MTF, NNPS and DQE parameters. The results demonstrate that the beam obliquity blurs the 2D MTF and DQE in the high spatial frequency range. However, this effect can be eliminated after FBP image reconstruction. In addition, impacts of the image acquisition geometry and detector parameters were evaluated using the 3D cascaded system analysis for DBT. The result shows that a wider projection angle range (e.g.  ±30°) improves the low spatial frequency (below 5 mm -1 ) performance of the CMOS APS detector. In addition, to maintain a high spatial resolution for DBT, a focal spot size of smaller than 0.3 mm should be used. Theoretical analysis suggests that a pixelated scintillator in combination with the 50 µm pixel pitch CMOS APS detector could further improve the 3D image resolution. Finally, the 3D imaging performance of the CMOS APS and an indirect amorphous silicon (a-Si:H) thin-film transistor (TFT) passive pixel sensor (PPS) detector was simulated and compared.

Pixel front-end development in 65 nm CMOS technology

International Nuclear Information System (INIS)

Havránek, M; Hemperek, T; Kishishita, T; Krüger, H; Wermes, N

2014-01-01

Luminosity upgrade of the LHC (HL-LHC) imposes severe constraints on the detector tracking systems in terms of radiation hardness and capability to cope with higher hit rates. One possible way of keeping track with increasing luminosity is the usage of more advanced technologies. Ultra deep sub-micron CMOS technologies allow a design of complex and high speed electronics with high integration density. In addition, these technologies are inherently radiation hard. We present a prototype of analog pixel front-end integrated circuit designed in 65 nm CMOS technology with applications oriented towards the ATLAS Pixel Detector upgrade. The aspects of ultra deep sub-micron design and performance of the analog pixel front-end circuits will be discussed

Development and characterization of diamond and 3D-silicon pixel detectors with ATLAS-pixel readout electronics

Energy Technology Data Exchange (ETDEWEB)

Mathes, Markus

2008-12-15

Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10{sup 16} particles per cm{sup 2} per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 x 50 {mu}m{sup 2} have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm{sup 2} and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 x 6 cm{sup 2}). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection inside a pixel cell as well as the charge sharing between adjacent pixels was studied using a high energy particle beam. (orig.)

Development and characterization of a DEPFET pixel prototype system for the ILC vertex detector

Energy Technology Data Exchange (ETDEWEB)

Kohrs, Robert

2008-09-15

For the future TeV-scale linear collider ILC (International Linear Collider) a vertex detector of unprecedented performance is needed to fully exploit its physics potential. By incorporating a field effect transistor into a fully depleted sensor substrate the DEPFET (Depleted Field Effect Transistor) sensor combines radiation detection and in-pixel amplification. For the operation at a linear collider the excellent noise performance of DEPFET pixels allows building very thin detectors with a high spatial resolution and a low power consumption. With this thesis a prototype system consisting of a 64 x 128 pixels sensor, dedicated steering and readout ASICs and a data acquisition board has been developed and successfully operated in the laboratory and under realistic conditions in beam test environments at DESY and CERN. A DEPFET matrix has been successfully read out using the on-chip zero-suppression of the readout chip CURO 2. The results of the system characterization and beam test results are presented. (orig.)

Development and characterization of a DEPFET pixel prototype system for the ILC vertex detector

International Nuclear Information System (INIS)

Kohrs, Robert

2008-09-01

For the future TeV-scale linear collider ILC (International Linear Collider) a vertex detector of unprecedented performance is needed to fully exploit its physics potential. By incorporating a field effect transistor into a fully depleted sensor substrate the DEPFET (Depleted Field Effect Transistor) sensor combines radiation detection and in-pixel amplification. For the operation at a linear collider the excellent noise performance of DEPFET pixels allows building very thin detectors with a high spatial resolution and a low power consumption. With this thesis a prototype system consisting of a 64 x 128 pixels sensor, dedicated steering and readout ASICs and a data acquisition board has been developed and successfully operated in the laboratory and under realistic conditions in beam test environments at DESY and CERN. A DEPFET matrix has been successfully read out using the on-chip zero-suppression of the readout chip CURO 2. The results of the system characterization and beam test results are presented. (orig.)

Electron imaging with Medipix2 hybrid pixel detector

CERN Document Server

McMullan, G; Chen, S; Henderson, R; Llopart, X; Summerfield, C; Tlustos, L; Faruqi, A R

2007-01-01

The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 μm×55 μm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 μm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach 85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach 35% of that expected for a perfect detector (4/π2). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/π). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected v...

The Upgraded Pixel Detector of the ATLAS Experiment for Run-2

CERN Document Server

Ferrere, Didier; The ATLAS collaboration

2016-01-01

Run-2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130nm technology. In addition the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning and performance of the 4-layer Pixel Detector, in particular the IBL, will be presented, using collision data.

ALICE Silicon Pixel Detector

CERN Multimedia

Manzari, V

2013-01-01

The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

Active pixel sensor array as a detector for electron microscopy.

Science.gov (United States)

Milazzo, Anna-Clare; Leblanc, Philippe; Duttweiler, Fred; Jin, Liang; Bouwer, James C; Peltier, Steve; Ellisman, Mark; Bieser, Fred; Matis, Howard S; Wieman, Howard; Denes, Peter; Kleinfelder, Stuart; Xuong, Nguyen-Huu

2005-09-01

A new high-resolution recording device for transmission electron microscopy (TEM) is urgently needed. Neither film nor CCD cameras are systems that allow for efficient 3-D high-resolution particle reconstruction. We tested an active pixel sensor (APS) array as a replacement device at 200, 300, and 400 keV using a JEOL JEM-2000 FX II and a JEM-4000 EX electron microscope. For this experiment, we used an APS prototype with an area of 64 x 64 pixels of 20 microm x 20 microm pixel pitch. Single-electron events were measured by using very low beam intensity. The histogram of the incident electron energy deposited in the sensor shows a Landau distribution at low energies, as well as unexpected events at higher absorbed energies. After careful study, we concluded that backscattering in the silicon substrate and re-entering the sensitive epitaxial layer a second time with much lower speed caused the unexpected events. Exhaustive simulation experiments confirmed the existence of these back-scattered electrons. For the APS to be usable, the back-scattered electron events must be eliminated, perhaps by thinning the substrate to less than 30 microm. By using experimental data taken with an APS chip with a standard silicon substrate (300 microm) and adjusting the results to take into account the effect of a thinned silicon substrate (30 microm), we found an estimate of the signal-to-noise ratio for a back-thinned detector in the energy range of 200-400 keV was about 10:1 and an estimate for the spatial resolution was about 10 microm.

The ATLAS Pixel Detector operation and performance

CERN Document Server

Andreazza, A; The ATLAS collaboration

2010-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately $80 imes 10^6$~electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region. The complete Pixel Detector has been taking part in cosmic-ray data-taking since 2008. Since November 2009 it has been operated with LHC colliding beams at $sqrt{s}=900$~GeV, 2.36~TeV and 7 TeV. The detector operated with an active fraction of 97.2% at a threshold of 3500~$e$, showing a noise occupancy rate better than $10^{-9}$~hit/pixel/BC and a track association efficiency of 99%. The Lorentz angle for electrons in silicon is measured to be $ heta_mathrm{L}=12.11^circ pm 0.09^circ$ and its temperature dependence has been verified. The pulse height information from the time-over-threshold technique allows to improve the point resolution using charge sharing and to perform parti...

Status and future of the ATLAS Pixel Detector at the LHC

International Nuclear Information System (INIS)

Rozanov, Alexandre

2013-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. The detector provides hermetic coverage with three cylindrical layers and three layers of disks in each forward end-cap. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-on-n silicon substrates. Intensive calibration, tuning, timing optimization and monitoring resulted in the successful five years of operation with good detector performance. The record breaking instantaneous luminosities of 7.7×10 33 cm −2 s −1 recently surpassed at the LHC generated a rapidly increasing particle fluence in the ATLAS Pixel Detector. As the radiation dose accumulated, the first effects of radiation damage became observable in the silicon sensors as an increase in the silicon leakage current and the change of the voltage required to fully deplete the sensor. A fourth pixel layer at a radius of 3.3 cm will be added during the long shutdown (2013–2014) together with the replacement of pixel services. A letter of intent was submitted for a completely new Pixel Detector after 2023, capable to take data with extremely high leveled luminosities of 5×10 34 cm −2 s −1 at the high luminosity LHC. -- Highlights: •The ATLAS Pixel Detector provides hermetic coverage with three layers with 80 million pixels. •Calibration, tuning, timing optimization and monitoring resulted in the successful five years of operation with good detector performance. •First effects of radiation damage became observable in the silicon sensors. •A fourth pixel layer at a radius of 3.3 cm will be added during the long shutdown (2013–2014). •Replacement of pixel services in 2013–2014. •A letter of intent was submitted for new Pixel Detector after 2023 for high luminosity LHC

X-CSIT: a toolkit for simulating 2D pixel detectors

Science.gov (United States)

Joy, A.; Wing, M.; Hauf, S.; Kuster, M.; Rüter, T.

2015-04-01

A new, modular toolkit for creating simulations of 2D X-ray pixel detectors, X-CSIT (X-ray Camera SImulation Toolkit), is being developed. The toolkit uses three sequential simulations of detector processes which model photon interactions, electron charge cloud spreading with a high charge density plasma model and common electronic components used in detector readout. In addition, because of the wide variety in pixel detector design, X-CSIT has been designed as a modular platform so that existing functions can be modified or additional functionality added if the specific design of a detector demands it. X-CSIT will be used to create simulations of the detectors at the European XFEL, including three bespoke 2D detectors: the Adaptive Gain Integrating Pixel Detector (AGIPD), Large Pixel Detector (LPD) and DePFET Sensor with Signal Compression (DSSC). These simulations will be used by the detector group at the European XFEL for detector characterisation and calibration. For this purpose, X-CSIT has been integrated into the European XFEL's software framework, Karabo. This will further make it available to users to aid with the planning of experiments and analysis of data. In addition, X-CSIT will be released as a standalone, open source version for other users, collaborations and groups intending to create simulations of their own detectors.

High-voltage pixel detectors in commercial CMOS technologies for ATLAS, CLIC and Mu3e experiments

CERN Document Server

Peric, Ivan; Backhaus, Malte; Barbero, Marlon; Benoit, Mathieu; Berger, Niklaus; Bompard, Frederic; Breugnon, Patrick; Clemens, Jean-Claude; Dannheim, Dominik; Dierlamm, Alexander; Feigl, Simon; Fischer, Peter; Fougeron, Denis; Garcia-Sciveres, Maurice; Heim, Timon; Hügging, Fabian; Kiehn, Moritz; Kreidl, Christian; Krüger, Hans; La Rosa, Alessandro; Liu, Jian; Lütticke, Florian; Mariñas, Carlos; Meng, Lingxin; Miucci, Antonio; Münstermann, Daniel; Nguyen, Hong Hanh; Obermann, Theresa; Pangaud, Patrick; Perrevoort, Ann-Kathrin; Rozanov, Alexandre; Schöning, André; Schwenker, Benjamin; Wiedner, Dirk

2013-01-01

High-voltage particle detectors in commercial CMOS technologies are a detector family that allows implementation of low-cost, thin and radiation-tolerant detectors with a high time resolution. In the R/D phase of the development, a radiation tolerance of 10 15 n eq = cm 2 , nearly 100% detection ef fi ciency and a spatial resolution of about 3 μ m were demonstrated. Since 2011 the HV detectors have fi rst applications: the technology is presently the main option for the pixel detector of the planned Mu3e experiment at PSI (Switzerland). Several prototype sensors have been designed in a standard 180 nm HV CMOS process and successfully tested. Thanks to its high radiation tolerance, the HV detectors are also seen at CERN as a promising alternative to the standard options for ATLAS upgrade and CLIC. In order to test the concept, within ATLAS upgrade R/D, we are currently exploring an active pixel detector demonstrator HV2FEI4; also implemented in the 180 nm HV process

Pixel array detector for X-ray free electron laser experiments

Energy Technology Data Exchange (ETDEWEB)

Philipp, Hugh T., E-mail: htp2@cornell.edu [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Hromalik, Marianne [Electrical and Computer Engineering, SUNY Oswego, Oswego, NY 13126 (United States); Tate, Mark; Koerner, Lucas [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M. [Department of Physics, Laboratory of Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Wilson Laboratory, Cornell University, CHESS, Ithaca, NY 14853 (United States)

2011-09-01

X-ray free electron lasers (XFELs) promise to revolutionize X-ray science with extremely high peak brilliances and femtosecond X-ray pulses. This will require novel detectors to fully realize the potential of these new sources. There are many current detector development projects aimed at the many challenges of meeting the XFEL requirements . This paper describes a pixel array detector (PAD) that has been developed for the Coherent X-ray Imaging experiment at the Linac Coherent Light Source (LCLS) at the SLAC National Laboratory . The detector features 14-bit in-pixel digitization; a 2-level in-pixel gain setting that can be used to make an arbitrary 2-D gain pattern that is adaptable to a particular experiment; the ability to handle instantaneous X-ray flux rates of 10{sup 17} photons per second; and continuous frames rates in excess of 120 Hz. The detector uses direct detection of X-rays in a silicon diode. The charge produced by the diode is integrated in a pixilated application specific integrated circuit (ASIC) which digitizes collected holes with single X-ray photon capability. Each ASIC is 194x185 pixels, each pixel is 110{mu}mx110{mu}m on a side. Each pixel can detect up to 2500 X-rays per frame in low-gain mode, yet easily detects single photons at high-gain. Cooled, single-chip detectors have been built and meet all the required specifications. SLAC National Laboratory is engaged in constructing a tiled, multi-chip 1516x1516 pixel detector.

Status of the digital pixel array detector for protein crystallography

CERN Document Server

Datte, P; Beuville, E; Endres, N; Druillole, F; Luo, L; Millaud, J E; Xuong, N H

1999-01-01

A two-dimensional photon counting digital pixel array detector is being designed for static and time resolved protein crystallography. The room temperature detector will significantly enhance monochromatic and polychromatic protein crystallographic through-put data rates by more than three orders of magnitude. The detector has an almost infinite photon counting dynamic range and exhibits superior spatial resolution when compared to present crystallographic phosphor imaging plates or phosphor coupled CCD detectors. The detector is a high resistivity N-type Si with a pixel pitch of 150x150 mu m, and a thickness of 300 mu m, and is bump bonded to an application specific integrated circuit. The event driven readout of the detector is based on the column architecture and allows an independent pixel hit rate above 1 million photons/s/pixel. The device provides energy discrimination and sparse data readout which yields minimal dead-time. This type of architecture allows a continuous (frameless) data acquisition, a f...

Commissioning of the ATLAS pixel detector

International Nuclear Information System (INIS)

Golling, Tobias

2008-01-01

The ATLAS pixel detector is a high precision silicon tracking device located closest to the LHC interaction point. It belongs to the first generation of its kind in a hadron collider experiment. It will provide crucial pattern recognition information and will largely determine the ability of ATLAS to precisely track particle trajectories and find secondary vertices. It was the last detector to be installed in ATLAS in June 2007, has been fully connected and tested in-situ during spring and summer 2008, and is ready for the imminent LHC turn-on. The highlights of the past and future commissioning activities of the ATLAS pixel system are presented

Test-beam activities and results for the ATLAS ITk pixel detector

CERN Document Server

Bisanz, Tobias; The ATLAS collaboration

2017-01-01

The Phase-II upgrade of the LHC will result in an increase of the instantaneous luminosity up to about $5\\times10^{34}~\\text{cm}^{-2}\\text{s}^{-1}$. To cope with the resulting challenges the current Inner Detector will be replaced by an all-silicon Inner Tracker (ITk) system. The Pixel Detector will have to deal with occupancies of about 300~hits/FE/s as well as a fluence of $2\\times10^{16}~\\text{n}_\\text{eq}\\text{cm}^{-2}$. Various sensor layouts are under development, aiming at providing a high performance, cost effective pixel instrumentation to cover an active area of about $10~\\text{m}^2$. These range from thin planar silicon, over 3D silicon, to active CMOS sensors.\\par After extensive characterization of the sensors in the lab, their charge collection properties and hit efficiency are measured in common testbeam campaigns, which provide valuable feedback for improvements of the layout. Testbeam measurements of the final prototypes will be used for the decision of which sensor types will be installed in...

ATLAS Pixel Detector Upgrade

CERN Document Server

Flick, T; The ATLAS collaboration

2009-01-01

The first upgrade for higher luminosity at LHC for the ATLAS pixel detector is the insertion of a forth layer, the IBL. The talk gives an overview about what the IBL is and how it will be set up, as well as to give a status of the research and develoment work.

Development and Characterization of Diamond and 3D-Silicon Pixel Detectors with ATLAS-Pixel Readout Electronics

CERN Document Server

Mathes, Markus

2008-01-01

Hybrid pixel detectors are used for particle tracking in the innermost layers of current high energy experiments like ATLAS. After the proposed luminosity upgrade of the LHC, they will have to survive very high radiation fluences of up to 10^16 particles per cm^2 per life time. New sensor concepts and materials are required, which promise to be more radiation tolerant than the currently used planar silicon sensors. Most prominent candidates are so-called 3D-silicon and single crystal or poly-crystalline diamond sensors. Using the ATLAS pixel electronics different detector prototypes with a pixel geometry of 400 × 50 um^2 have been built. In particular three devices have been studied in detail: a 3D-silicon and a single crystal diamond detector with an active area of about 1 cm^2 and a poly-crystalline diamond detector of the same size as a current ATLAS pixel detector module (2 × 6 cm^2). To characterize the devices regarding their particle detection efficiency and spatial resolution, the charge collection ...

Online calibrations and performance of the ATLAS Pixel Detector

CERN Document Server

Keil, M; The ATLAS collaboration

2010-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 M electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. The talk will give an overview of the calibration and performance of both the detector and its optical readout. The most basic parameter to be tuned and calibrated for the detector electronics is the readout threshold of the individual pixel channels. These need to be carefully tuned to optimise position resolution a...

Wafer-scale pixelated detector system

Science.gov (United States)

Fahim, Farah; Deptuch, Grzegorz; Zimmerman, Tom

2017-10-17

A large area, gapless, detection system comprises at least one sensor; an interposer operably connected to the at least one sensor; and at least one application specific integrated circuit operably connected to the sensor via the interposer wherein the detection system provides high dynamic range while maintaining small pixel area and low power dissipation. Thereby the invention provides methods and systems for a wafer-scale gapless and seamless detector systems with small pixels, which have both high dynamic range and low power dissipation.

Electron imaging with Medipix2 hybrid pixel detector

International Nuclear Information System (INIS)

McMullan, G.; Cattermole, D.M.; Chen, S.; Henderson, R.; Llopart, X.; Summerfield, C.; Tlustos, L.; Faruqi, A.R.

2007-01-01

The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 μmx55 μm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 μm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach ∼85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach ∼35% of that expected for a perfect detector (4/π 2 ). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/π). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected values for the MTF and DQE as a function of the threshold energy. The good agreement between theory and experiment allows suggestions for further improvements to be made with confidence. The present detector is already very useful for experiments that require a high DQE at very low doses

Electron imaging with Medipix2 hybrid pixel detector.

Science.gov (United States)

McMullan, G; Cattermole, D M; Chen, S; Henderson, R; Llopart, X; Summerfield, C; Tlustos, L; Faruqi, A R

2007-01-01

The electron imaging performance of Medipix2 is described. Medipix2 is a hybrid pixel detector composed of two layers. It has a sensor layer and a layer of readout electronics, in which each 55 microm x 55 microm pixel has upper and lower energy discrimination and MHz rate counting. The sensor layer consists of a 300 microm slab of pixellated monolithic silicon and this is bonded to the readout chip. Experimental measurement of the detective quantum efficiency, DQE(0) at 120 keV shows that it can reach approximately 85% independent of electron exposure, since the detector has zero noise, and the DQE(Nyquist) can reach approximately 35% of that expected for a perfect detector (4/pi(2)). Experimental measurement of the modulation transfer function (MTF) at Nyquist resolution for 120 keV electrons using a 60 keV lower energy threshold, yields a value that is 50% of that expected for a perfect detector (2/pi). Finally, Monte Carlo simulations of electron tracks and energy deposited in adjacent pixels have been performed and used to calculate expected values for the MTF and DQE as a function of the threshold energy. The good agreement between theory and experiment allows suggestions for further improvements to be made with confidence. The present detector is already very useful for experiments that require a high DQE at very low doses.

Algorithms for spectral calibration of energy-resolving small-pixel detectors

International Nuclear Information System (INIS)

Scuffham, J; Veale, M C; Wilson, M D; Seller, P

2013-01-01

Small pixel Cd(Zn)Te detectors often suffer from inter-pixel variations in gain, resulting in shifts in the individual energy spectra. These gain variations are mainly caused by inclusions and defects within the crystal structure, which affect the charge transport within the material causing a decrease in the signal pulse height. In imaging applications, spectra are commonly integrated over a particular peak of interest. This means that the individual pixels must be accurately calibrated to ensure that the same portion of the spectrum is integrated in every pixel. The development of large-area detectors with fine pixel pitch necessitates automated algorithms for this spectral calibration, due to the very large number of pixels. Algorithms for automatic spectral calibration require accurate determination of characteristic x-ray or photopeak positions on a pixelwise basis. In this study, we compare two peak searching spectral calibration algorithms for a small-pixel CdTe detector in gamma spectroscopic imaging. The first algorithm uses rigid search ranges to identify peaks in each pixel spectrum, based on the average peak positions across all pixels. The second algorithm scales the search ranges on the basis of the position of the highest-energy peak relative to the average across all pixels. In test spectra acquired with Tc-99m, we found that the rigid search algorithm failed to correctly identify the target calibraton peaks in up to 4% of pixels. In contrast, the scaled search algorithm failed in only 0.16% of pixels. Failures in the scaled search algorithm were attributed to the presence of noise events above the main photopeak, and possible non-linearities in the spectral response in a small number of pixels. We conclude that a peak searching algorithm based on scaling known peak spacings is simple to implement and performs well for the spectral calibration of pixellated radiation detectors

Development of ultra-light pixelated systems based on CMOS sensors for future high precision vertex detectors

Energy Technology Data Exchange (ETDEWEB)

Winter, Marc [Institut Pluridisciplinaire Hubert Curien - IPHC, 23 rue du loess - BP28, 67037 Strasbourg cedex 2 (France)

2010-07-01

CMOS pixel sensors have demonstrated attractive performances in terms of spatial resolution and material budget. The recent emergence of high resistivity substrates in mass production CMOS processes has originated particularly high signal-to-noise ratios and improved the non-ionising radiation tolerance to fluences close to 10{sup 14} Neq/cm{sup 2}. These achievements, obtained with MIMOSA sensors developed at IPHC (Strasbourg) and IRFU (Saclay) will be overviewed and put in perspective of the numerous applications of the sensors. These include collider experiments at RHIC, LHC, ILC and CLIC. The development of ultra-light ladders composed of these sensors and featuring 0.1% to 0.3% of radiation length, will be summarised. The contribution to the conference will also address the evolution of these pixelated systems, including on-going R on multi-tier sensors exploiting vertical integration technologies. (author)

Fully integrated CMOS pixel detector for high energy particles

International Nuclear Information System (INIS)

Vanstraelen, G.; Debusschere, I.; Claeys, C.; Declerck, G.

1989-01-01

A novel type of position and energy sensitive, monolithic pixel array with integrated readout electronics is proposed. Special features of the design are a reduction of the number of output channels and of the amount of output data, and the use of transistors on the high resistivity silicon. The number of output channels for the detector array is reduced by handling in parallel a number of pixels, chosen as a function of the time resolution required for the system, and by the use of an address decoder. A further reduction of data is achieved by reading out only those pixels which have been activated. The pixel detector circuit will be realized in a 3 μm p-well CMOS process, which is optimized for the full integration of readout electronics and detector diodes on high resistivity Si. A retrograde well is formed by means of a high energy implantation, followed by the appropriate temperature steps. The optimization of the well shape takes into account the high substrate bias applied during the detector operation. The design is largely based on the use of MOS transistors on the high resistivity silicon itself. These have proven to perform as well as transistors on standard doped substrate. The basic building elements as well as the design strategy of the integrated pixel detector are presented in detail. (orig.)

X-ray imaging with photon counting hybrid semiconductor pixel detectors

CERN Document Server

Manolopoulos, S; Campbell, M; Snoeys, W; Heijne, Erik H M; Pernigotti, E; Raine, C; Smith, K; Watt, J; O'Shea, V; Ludwig, J; Schwarz, C

1999-01-01

Semiconductor pixel detectors, originally developed for particle physics experiments, have been studied as X-ray imaging devices. The performance of devices using the OMEGA 3 read-out chip bump-bonded to pixellated silicon semiconductor detectors is characterised in terms of their signal-to-noise ratio when exposed to 60 kVp X-rays. Although parts of the devices achieve values of this ratio compatible with the noise being photon statistics limited, this is not found to hold for the whole pixel matrix, resulting in the global signal-to-noise ratio being compromised. First results are presented of X-ray images taken with a gallium arsenide pixel detector bump-bonded to a new read-out chip, (MEDIPIX), which is a single photon counting read-out chip incorporating a 15-bit counter in every pixel. (author)

Performance of thin pixel sensors irradiated up to a fluence of 1016neqcm-2 and development of a new interconnection technology for the upgrade of the ATLAS pixel system

International Nuclear Information System (INIS)

Macchiolo, A.; Andricek, L.; Beimforde, M.; Moser, H.-G.; Nisius, R.; Richter, R.H.; Weigell, P.

2011-01-01

A new pixel module concept is presented, where thin sensors and a novel vertical integration technique are combined. This R and D activity is carried out in view of the ATLAS pixel detector upgrades. A first set of n-in-p pixel sensors with active thicknesses of 75 and 150μm has been produced using a thinning technique developed at the Max-Planck-Institut Halbleiterlabor (HLL). Charge Collection Efficiency measurements have been performed, yielding a higher CCE than expected from the present radiation damage models. The interconnection of thin n-in-p pixels to the FE-I3 ATLAS electronics is under way, exploiting the Solid Liquid Interdiffusion (SLID) technique developed by the Fraunhofer Institut EMFT. In addition, preliminary studies aimed at Inter-Chip-Vias (ICV) etching into the FE-I3 electronics are reported. ICVs will be used to route the signals vertically through the read-out chip, to newly created pads on the backside. This should serve as a proof of principle for future four-side tileable pixel assemblies, avoiding the cantilever presently needed in the chip for the wire bonding.

Integration and installation of the CMS pixel barrel detector

CERN Document Server

Kastli, Hans-Christian

2008-01-01

A 66 million pixel detector has been installed in 2008 into the CMS experiment at CERN. The development and construction time took more than 10 years. In this paper the assembly of the barrel detector is described. A simple but effective method to accomplish a survey of the module positions during assembly is discussed. Furthermore the insertion and commissioning of the CMS pixel barrel detector which took place in July 2008 is illustrated.

14C autoradiography with an energy-sensitive silicon pixel detector.

Science.gov (United States)

Esposito, M; Mettivier, G; Russo, P

2011-04-07

The first performance tests are presented of a carbon-14 ((14)C) beta-particle digital autoradiography system with an energy-sensitive hybrid silicon pixel detector based on the Timepix readout circuit. Timepix was developed by the Medipix2 Collaboration and it is similar to the photon-counting Medipix2 circuit, except for an added time-based synchronization logic which allows derivation of energy information from the time-over-threshold signal. This feature permits direct energy measurements in each pixel of the detector array. Timepix is bump-bonded to a 300 µm thick silicon detector with 256 × 256 pixels of 55 µm pitch. Since an energetic beta-particle could release its kinetic energy in more than one detector pixel as it slows down in the semiconductor detector, an off-line image analysis procedure was adopted in which the single-particle cluster of hit pixels is recognized; its total energy is calculated and the position of interaction on the detector surface is attributed to the centre of the charge cluster. Measurements reported are detector sensitivity, (4.11 ± 0.03) × 10(-3) cps mm(-2) kBq(-1) g, background level, (3.59 ± 0.01) × 10(-5) cps mm(-2), and minimum detectable activity, 0.0077 Bq. The spatial resolution is 76.9 µm full-width at half-maximum. These figures are compared with several digital imaging detectors for (14)C beta-particle digital autoradiography.

Performance of irradiated thin n-in-p planar pixel sensors for the ATLAS Inner Tracker upgrade

Science.gov (United States)

Savić, N.; Beyer, J.; Hiti, B.; Kramberger, G.; La Rosa, A.; Macchiolo, A.; Mandić, I.; Nisius, R.; Petek, M.

2017-12-01

The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC accelerator complex (HL-LHC). In the new tracking detector (ITk) pixel modules with increased granularity will implement to maintain the occupancy with a higher track density. In addition, both sensors and read-out chips composing the hybrid modules will be produced employing more radiation hard technologies with respect to the present pixel detector. Due to their outstanding performance in terms of radiation hardness, thin n-in-p sensors are promising candidates to instrument a section of the new pixel system. Recently produced and developed sensors of new designs will be presented. To test the sensors before interconnection to chips, a punch-through biasing structure was implemented. Its design was optimized to decrease the possible tracking efficiency losses observed. After irradiation, they were caused by the punch-through biasing structure. A sensor compatible with the ATLAS FE-I4 chip with a pixel size of 50×250 μm2, subdivided into smaller pixel implants of 30×30 μm2 size was designed to investigate the performance of the 50×50 μm2 pixel cells foreseen for the HL-LHC. Results on sensor performance of 50×250 and 50×50 μm2 pixel cells in terms of efficiency, charge collection and electric field properties are obtained with beam tests and the Transient Current Technique.

Modeling of Pixelated Detector in SPECT Pinhole Reconstruction.

Science.gov (United States)

Feng, Bing; Zeng, Gengsheng L

2014-04-10

A challenge for the pixelated detector is that the detector response of a gamma-ray photon varies with the incident angle and the incident location within a crystal. The normalization map obtained by measuring the flood of a point-source at a large distance can lead to artifacts in reconstructed images. In this work, we investigated a method of generating normalization maps by ray-tracing through the pixelated detector based on the imaging geometry and the photo-peak energy for the specific isotope. The normalization is defined for each pinhole as the normalized detector response for a point-source placed at the focal point of the pinhole. Ray-tracing is used to generate the ideal flood image for a point-source. Each crystal pitch area on the back of the detector is divided into 60 × 60 sub-pixels. Lines are obtained by connecting between a point-source and the centers of sub-pixels inside each crystal pitch area. For each line ray-tracing starts from the entrance point at the detector face and ends at the center of a sub-pixel on the back of the detector. Only the attenuation by NaI(Tl) crystals along each ray is assumed to contribute directly to the flood image. The attenuation by the silica (SiO 2 ) reflector is also included in the ray-tracing. To calculate the normalization for a pinhole, we need to calculate the ideal flood for a point-source at 360 mm distance (where the point-source was placed for the regular flood measurement) and the ideal flood image for the point-source at the pinhole focal point, together with the flood measurement at 360 mm distance. The normalizations are incorporated in the iterative OSEM reconstruction as a component of the projection matrix. Applications to single-pinhole and multi-pinhole imaging showed that this method greatly reduced the reconstruction artifacts.

Vertex measurement at a hadron collider. The ATLAS pixel detector

International Nuclear Information System (INIS)

Grosse-Knetter, J.

2008-03-01

The ATLAS Pixel Detector is the innermost layer of the ATLAS tracking system and will contribute significantly to the ATLAS track and vertex reconstruction. The detector consists of identical sensor-chip-hybrid modules, arranged in three barrels in the centre and three disks on either side for the forward region. The position of the Pixel Detector near the interaction point requires excellent radiation hardness, fast read-out, mechanical and thermal robustness, good long-term stability, all combined with a low material budget. The new design concepts used to meet the challenging requirements are discussed with their realisation in the Pixel Detector, followed by a description of a refined and extensive set of measurements to assess the detector performance during and after its construction. (orig.)

Calibration Analysis Software for the ATLAS Pixel Detector

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00372086; The ATLAS collaboration

2016-01-01

The calibration of the ATLAS Pixel detector at LHC fulfils two main purposes: to tune the front-end configuration parameters for establishing the best operational settings and to measure the tuning performance through a subset of scans. An analysis framework has been set up in order to take actions on the detector given the outcome of a calibration scan (e.g. to create a mask for disabling noisy pixels). The software framework to control all aspects of the Pixel detector scans and analyses is called Calibration Console. The introduction of a new layer, equipped with new Front End-I4 Chips, required an update the Console architecture. It now handles scans and scans analyses applied together to chips with different characteristics. An overview of the newly developed Calibration Analysis Software will be presented, together with some preliminary result.

Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker

Energy Technology Data Exchange (ETDEWEB)

Paoloni, E., E-mail: eugenio.paoloni@pi.infn.it [Università degli Studi di Pisa (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Pisa (Italy); Comotti, D. [Università degli Studi di Bergamo (Italy); Manghisoni, M.; Re, V.; Traversi, G. [Università degli Studi di Bergamo (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Pavia (Italy); Fabbri, L.; Gabrielli, A. [Università degli Studi di Bologna (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Giorgi, F.; Pellegrini, G.; Sbarra, C. [Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Semprini-Cesari, N.; Valentinetti, S.; Villa, M.; Zoccoli, A. [Università degli Studi di Bologna (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Berra, A.; Lietti, D.; Prest, M. [Università dell' Insubria, Como (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano Bicocca (Italy); Bevan, A. [School of Physics and Astronomy, Queen Mary University of London, London E1 4NS (United Kingdom); Wilson, F. [STFC Rutherford Appleton Laboratory, Harwell, Oxford Didcot OX11 0QX (United Kingdom); Beck, G. [School of Physics and Astronomy, Queen Mary University of London, London E1 4NS (United Kingdom); and others

2013-12-11

The latest advances in the design and characterization of several pixel sensors developed to satisfy the very demanding requirements of the innermost layer of the SuperB Silicon Vertex Tracker will be presented in this paper. The SuperB machine is an electron positron collider operating at the ϒ(4S) peak to be built in the very near future by the Cabibbo Lab consortium. A pixel detector based on extremely thin, radiation hard devices able to cope with rate in the tens of MHz/cm{sup 2} range will be the optimal solution for the upgrade of the inner layer of the SuperB tracking system. At present several options with different levels of maturity are being investigated to understand advantages and potential issues of the different technologies: thin hybrid pixels, Deep N-Well CMOS MAPS, INMAPS CMOS MAPS featuring a quadruple well and high resistivity substrates and CMOS MAPS realized with Vertical Integration technology. The newest results from beam test, the outcomes of the radiation damage studies and the laboratory characterization of the latest prototypes will be reported.

Advances in the development of pixel detector for the SuperB Silicon Vertex Tracker

International Nuclear Information System (INIS)

Paoloni, E.; Comotti, D.; Manghisoni, M.; Re, V.; Traversi, G.; Fabbri, L.; Gabrielli, A.; Giorgi, F.; Pellegrini, G.; Sbarra, C.; Semprini-Cesari, N.; Valentinetti, S.; Villa, M.; Zoccoli, A.; Berra, A.; Lietti, D.; Prest, M.; Bevan, A.; Wilson, F.; Beck, G.

2013-01-01

The latest advances in the design and characterization of several pixel sensors developed to satisfy the very demanding requirements of the innermost layer of the SuperB Silicon Vertex Tracker will be presented in this paper. The SuperB machine is an electron positron collider operating at the ϒ(4S) peak to be built in the very near future by the Cabibbo Lab consortium. A pixel detector based on extremely thin, radiation hard devices able to cope with rate in the tens of MHz/cm 2 range will be the optimal solution for the upgrade of the inner layer of the SuperB tracking system. At present several options with different levels of maturity are being investigated to understand advantages and potential issues of the different technologies: thin hybrid pixels, Deep N-Well CMOS MAPS, INMAPS CMOS MAPS featuring a quadruple well and high resistivity substrates and CMOS MAPS realized with Vertical Integration technology. The newest results from beam test, the outcomes of the radiation damage studies and the laboratory characterization of the latest prototypes will be reported

Technological aspects of gaseous pixel detectors fabrication

NARCIS (Netherlands)

Blanco Carballo, V.M.; Salm, Cora; Smits, Sander M.; Schmitz, Jurriaan; Melai, J.; Chefdeville, M.A.; van der Graaf, H.

2007-01-01

Integrated gaseous pixel detectors consisting of a metal punctured foil suspended in the order of 50μm over a pixel readout chip by means by SU-8 insulating pillars have been fabricated. SU-8 is used as sacrificial layer but metallization over uncrosslinked SU-8 presents adhesion and stress

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Nachman, Benjamin Philip; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of $10^{15}$ 1 MeV $n_\\mathrm{eq}/\\mathrm{cm}^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This talk presents a digitization model that includes radiation damage effects to the ATLAS Pixel sensors for the first time. After a thorough description of the setup, predictions for basic Pixel cluster properties are presented alongside first validation studies with Run 2 collision data.

Developments of the ATLAS pixel detector

International Nuclear Information System (INIS)

Andreazza, Attilio

2004-01-01

The ATLAS silicon pixel detector is the innermost tracking device of the ATLAS experiment at the Large Hardon Collider, consisting of more than 1700 modules for a total sensitive area of about 1.7m2 and over 80 million pixel cells. The concept is a hybrid of front-end chips bump bonded to the pixel sensor. The elementary pixel cell has 50μmx400μm size, providing pulse height information via the time over threshold technique. Prototype devices with oxygenated silicon sensor and rad-hard electronics built in the IBM 0.25μm process have been tested and maintain good resolution, efficiency and timing performances even after receiving the design radiation damage of 1015neq/cm2

Construction and Tests of Modules for the ATLAS Pixel Detector

CERN Document Server

AUTHOR|(CDS)2068490

2003-01-01

The ATLAS Pixel Detector is the innermost layer of the ATLAS tracking system and will contribute significantly to the ATLAS track and vertex reconstruction. The detector consists of identical sensor-chip-hybrid modules, arranged in three barrels in the centre and three disks on either side for the forward region. The position of the pixel detector near the interaction point requires excellent radiation hardness, mechanical and thermal robustness, good long-term stability, all combined with a low material budget. The pre-production phase of such pixel modules has nearly finished, yielding fully functional modules. Results are presented of tests with these modules.

Detector Modules for the CMS Pixel Phase 1 Upgrade

CERN Document Server

Zhu, De Hua; Berger, Pirmin; Meinhard, Maren Tabea; Starodumov, Andrey; Tavolaro, Vittorio Raoul

2017-01-01

The CMS Pixel phase 1 upgrade detector consists of 1184 modules with new design. An important part of the production is the module qualification and calibration, ensuring their proper functionality within the detector. This paper summarizes the qualification and calibration results of modules used in the innermost two detector layers with focus on methods using module-internal calibration signals. Extended characterizations on pixel level such as electronic noise and bump bond connectivity, optimization of operational parameters, sensor quality and thermal stress resistance were performed using a customized setup with controlled environment. It could be shown that the selected modules have on average $0.55 \\mathrm{ {}^{0\\!}\\!/\\!_{00} }\\, \\pm \\, 0.01 \\mathrm{ {}^{0\\!}\\!/\\!_{00} }\\,$ defective pixels and that all performance parameters stay within their specifications.

Charge amplitude distribution of the Gossip gaseous pixel detector

Energy Technology Data Exchange (ETDEWEB)

Blanco Carballo, V.M. [Twente University, Enschede (Netherlands); Chefdeville, M. [NIKHEF, P.B. 41882, 1009DB Amsterdam (Netherlands); Colas, P.; Giomataris, Y. [Saclay, Gif-sur-Yvette (France); Graaf, H. van der; Gromov, V. [NIKHEF, P.B. 41882, 1009DB Amsterdam (Netherlands); Hartjes, F. [NIKHEF, P.B. 41882, 1009DB Amsterdam (Netherlands)], E-mail: F.Hartjes@nikhef.nl; Kluit, R.; Koffeman, E. [NIKHEF, P.B. 41882, 1009DB Amsterdam (Netherlands); Salm, C.; Schmitz, J.; Smits, S.M. [Twente University, Enschede (Netherlands); Timmermans, J.; Visschers, J.L. [NIKHEF, P.B. 41882, 1009DB Amsterdam (Netherlands)

2007-12-11

The Gossip gaseous pixel detector is being developed for the detection of charged particles in extreme high radiation environments as foreseen close to the interaction point of the proposed super LHC. The detecting medium is a thin layer of gas. Because of the low density of this medium, only a few primary electron/ion pairs are created by the traversing particle. To get a detectable signal, the electrons drift towards a perforated metal foil (Micromegas) whereafter they are multiplied in a gas avalanche to provide a detectable signal. The gas avalanche occurs in the high field between the Micromegas and the pixel readout chip (ROC). Compared to a silicon pixel detector, Gossip features a low material budget and a low cooling power. An experiment using X-rays has indicated a possible high radiation tolerance exceeding 10{sup 16} hadrons/cm{sup 2}. The amplified charge signal has a broad amplitude distribution due to the limited statistics of the primary ionization and the statistical variation of the gas amplification. Therefore, some degree of inefficiency is inevitable. This study presents experimental results on the charge amplitude distribution for CO{sub 2}/DME (dimethyl-ether) and Ar/iC{sub 4}H{sub 10} mixtures. The measured curves were fitted with the outcome of a theoretical model. In the model, the physical Landau distribution is approximated by a Poisson distribution that is convoluted with the variation of the gas gain and the electronic noise. The value for the fraction of pedestal events is used for a direct calculation of the cluster density. For some gases, the measured cluster density is considerably lower than given in literature.

Charge amplitude distribution of the Gossip gaseous pixel detector

Science.gov (United States)

Blanco Carballo, V. M.; Chefdeville, M.; Colas, P.; Giomataris, Y.; van der Graaf, H.; Gromov, V.; Hartjes, F.; Kluit, R.; Koffeman, E.; Salm, C.; Schmitz, J.; Smits, S. M.; Timmermans, J.; Visschers, J. L.

2007-12-01

The Gossip gaseous pixel detector is being developed for the detection of charged particles in extreme high radiation environments as foreseen close to the interaction point of the proposed super LHC. The detecting medium is a thin layer of gas. Because of the low density of this medium, only a few primary electron/ion pairs are created by the traversing particle. To get a detectable signal, the electrons drift towards a perforated metal foil (Micromegas) whereafter they are multiplied in a gas avalanche to provide a detectable signal. The gas avalanche occurs in the high field between the Micromegas and the pixel readout chip (ROC). Compared to a silicon pixel detector, Gossip features a low material budget and a low cooling power. An experiment using X-rays has indicated a possible high radiation tolerance exceeding 10 16 hadrons/cm 2. The amplified charge signal has a broad amplitude distribution due to the limited statistics of the primary ionization and the statistical variation of the gas amplification. Therefore, some degree of inefficiency is inevitable. This study presents experimental results on the charge amplitude distribution for CO 2/DME (dimethyl-ether) and Ar/iC 4H 10 mixtures. The measured curves were fitted with the outcome of a theoretical model. In the model, the physical Landau distribution is approximated by a Poisson distribution that is convoluted with the variation of the gas gain and the electronic noise. The value for the fraction of pedestal events is used for a direct calculation of the cluster density. For some gases, the measured cluster density is considerably lower than given in literature.

Charge amplitude distribution of the Gossip gaseous pixel detector

International Nuclear Information System (INIS)

Blanco Carballo, V.M.; Chefdeville, M.; Colas, P.; Giomataris, Y.; Graaf, H. van der; Gromov, V.; Hartjes, F.; Kluit, R.; Koffeman, E.; Salm, C.; Schmitz, J.; Smits, S.M.; Timmermans, J.; Visschers, J.L.

2007-01-01

The Gossip gaseous pixel detector is being developed for the detection of charged particles in extreme high radiation environments as foreseen close to the interaction point of the proposed super LHC. The detecting medium is a thin layer of gas. Because of the low density of this medium, only a few primary electron/ion pairs are created by the traversing particle. To get a detectable signal, the electrons drift towards a perforated metal foil (Micromegas) whereafter they are multiplied in a gas avalanche to provide a detectable signal. The gas avalanche occurs in the high field between the Micromegas and the pixel readout chip (ROC). Compared to a silicon pixel detector, Gossip features a low material budget and a low cooling power. An experiment using X-rays has indicated a possible high radiation tolerance exceeding 10 16 hadrons/cm 2 . The amplified charge signal has a broad amplitude distribution due to the limited statistics of the primary ionization and the statistical variation of the gas amplification. Therefore, some degree of inefficiency is inevitable. This study presents experimental results on the charge amplitude distribution for CO 2 /DME (dimethyl-ether) and Ar/iC 4 H 10 mixtures. The measured curves were fitted with the outcome of a theoretical model. In the model, the physical Landau distribution is approximated by a Poisson distribution that is convoluted with the variation of the gas gain and the electronic noise. The value for the fraction of pedestal events is used for a direct calculation of the cluster density. For some gases, the measured cluster density is considerably lower than given in literature

Synchrotron applications of pixel and strip detectors at Diamond Light Source

International Nuclear Information System (INIS)

Marchal, J.; Tartoni, N.; Nave, C.

2009-01-01

A wide range of position-sensitive X-ray detectors have been commissioned on the synchrotron X-ray beamlines operating at the Diamond Light Source in UK. In addition to mature technologies such as image-plates, CCD-based detectors, multi-wire and micro-strip gas detectors, more recent detectors based on semiconductor pixel or strip sensors coupled to CMOS read-out chips are also in use for routine synchrotron X-ray diffraction and scattering experiments. The performance of several commercial and developmental pixel/strip detectors for synchrotron studies are discussed with emphasis on the image quality achieved with these devices. Examples of pixel or strip detector applications at Diamond Light Source as well as the status of the commissioning of these detectors on the beamlines are presented. Finally, priorities and ideas for future developments are discussed.

The ALICE silicon pixel detector front-end and read-out electronics

CERN Document Server

Kluge, A

2006-01-01

The ALICE silicon pixel detector (SPD) comprises the two innermost barrel layers of the ALICE inner tracker system. The SPD includes 120 half staves each of which consists of a linear array of 10 ALICE pixel chips bump bonded to two silicon sensors. Each pixel chip contains 8192 active cells, so the total number of pixel cells in the SPD is ≈107. The tight material budget and the limitation in physical dimensions required by the detector design introduce new challenges for the integration of the on-detector electronics. An essential part of the half stave is a low-mass multi-layer flex that carries power, ground, and signals to the pixel chips. Each half stave is read out using a multi-chip module (MCM). The MCM contains three radiation hard ASICs and an 800 Mbit/s custom developed optical link for the data transfer between the detector and the control room. The detector components are less than 3 mm thick. The production of the half-staves and MCMs is currently under way. Test results as well as on overvie...

ATLAS SemiConductor Tracker and Pixel Detector: Status and Performance

CERN Document Server

Reeves, K; The ATLAS collaboration

2012-01-01

The Semi-Conductor Tracker (SCT) and the Pixel Detector are the key precision tracking devices in the Inner Detector of the ATLAS experiment at CERN LHC. The SCT is a silicon strip detector and is constructed of 4088 silicon detector modules for a total of 6.3 million strips. Each module is designed, constructed and tested to operate as a stand-alone unit, mechanically, electrically, optically and thermally. The SCT silicon micro-strip sensors are processed in the planar p-in-n technology. The signals from the strips are processed in the front-end ASICS ABCD3TA, working in the binary readout mode. The Pixel Detector consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In the talk the current status of the SCT and Pixel Detector will be reviewed. We will report on the operation of the detectors including an overview of the issues we encountered and the observation of significant increases in leakage currents (as expected) from bulk ...

Results from the commissioning of the ATLAS Pixel Detector

CERN Document Server

Masetti, L

2008-01-01

The Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It is an 80 million channel silicon tracking system designed to detect charged tracks and secondary vertices with very high precision. After connection of cooling and services and verification of their operation, the ATLAS Pixel Detector is now in the final stage of its commissioning phase. Calibration of optical connections, verification of the analog performance and special DAQ runs for noise studies have been performed and the first tracks in combined operation with the other subdetectors of the ATLAS Inner Detector were observed. The results from calibration tests on the whole detector and from cosmic muon data are presented.

Charge collection and absorption-limited x-ray sensitivity of pixellated x-ray detectors

International Nuclear Information System (INIS)

Kabir, M. Zahangir; Kasap, S.O.

2004-01-01

The charge collection and absorption-limited x-ray sensitivity of a direct conversion pixellated x-ray detector operating in the presence of deep trapping of charge carriers is calculated using the Shockley-Ramo theorem and the weighting potential of the individual pixel. The sensitivity of a pixellated x-ray detector is analyzed in terms of normalized parameters; (a) the normalized x-ray absorption depth (absorption depth/photoconductor thickness), (b) normalized pixel width (pixel size/thickness), and (c) normalized carrier schubwegs (schubweg/thickness). The charge collection and absorption-limited sensitivity of pixellated x-ray detectors mainly depends on the transport properties (mobility and lifetime) of the charges that move towards the pixel electrodes and the extent of dependence increases with decreasing normalized pixel width. The x-ray sensitivity of smaller pixels may be higher or lower than that of larger pixels depending on the rate of electron and hole trapping and the bias polarity. The sensitivity of pixellated detectors can be improved by ensuring that the carrier with the higher mobility-lifetime product is drifted towards the pixel electrodes

Ultra-thin chip technology and applications

CERN Document Server

2010-01-01

Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.

High-speed readout of high-Z pixel detectors with the LAMBDA detector

International Nuclear Information System (INIS)

Pennicard, D.; Smoljanin, S.; Sheviakov, I.; Xia, Q.; Rothkirch, A.; Yu, Y.; Struth, B.; Hirsemann, H.; Graafsma, H.

2014-01-01

High-frame-rate X-ray pixel detectors make it possible to perform time-resolved experiments at synchrotron beamlines, and to make better use of these sources by shortening experiment times. LAMBDA is a photon-counting hybrid pixel detector based on the Medipix3 chip, designed to combine a small pixel size of 55 μm, a large tileable module design, high speed, and compatibility with ''high-Z'' sensors for hard X-ray detection. This technical paper focuses on LAMBDA's high-speed-readout functionality, which allows a frame rate of 2000 frames per second with no deadtime between successive images. This takes advantage of the Medipix3 chip's ''continuous read-write'' function and highly parallelised readout. The readout electronics serialise this data and send it back to a server PC over two 10 Gigabit Ethernet links. The server PC controls the detector and receives, processes and stores the data using software designed for the Tango control system. As a demonstration of high-speed readout of a high-Z sensor, a GaAs LAMBDA detector was used to make a high-speed X-ray video of a computer fan

Studies on a 300 k pixel detector telescope

Science.gov (United States)

Middelkamp, Peter; Antinori, F.; Barberis, D.; Becks, K. H.; Beker, H.; Beusch, W.; Burger, P.; Campbell, M.; Cantatore, E.; Catanesi, M. G.; Chesi, E.; Darbo, G.; D'Auria, S.; Davia, C.; di Bari, D.; di Liberto, S.; Elia, D.; Gys, T.; Heijne, E. H. M.; Helstrup, H.; Jacholkowski, A.; Jæger, J. J.; Jakubek, J.; Jarron, P.; Klempt, W.; Krummenacher, F.; Knudson, K.; Kralik, I.; Kubasta, J.; Lasalle, J. C.; Leitner, R.; Lemeilleur, F.; Lenti, V.; Letheren, M.; Lopez, L.; Loukas, D.; Luptak, M.; Martinengo, P.; Meddeler, G.; Meddi, F.; Morando, M.; Munns, A.; Pellegrini, F.; Pengg, F.; Pospisil, S.; Quercigh, E.; Ridky, J.; Rossi, L.; Safarik, K.; Scharfetter, L.; Segato, G.; Simone, S.; Smith, K.; Snoeys, W.; Vrba, V.

1996-02-01

Four silicon pixel detector planes are combined to form a tracking telescope in the lead ion experiment WA97 at CERN with 290 304 sensitive elements each of 75 μm by 500 μm area. An electronic pulse processing circuit is associated with each individual sensing element and the response for ionizing particles is binary with an adjustable threshold. The noise rate for a threshold of 6000 e- has been measured to be less than 10-10. The inefficient area due to malfunctioning pixels is 2.8% of the 120 cm2. Detector overlaps within one plane have been used to determine the alignment of the components of the plane itself, without need for track reconstruction using external detectors. It is the first time that such a big surface covered with active pixels has been used in a physics experiment. Some aspects concerning inclined particle tracks and time walk have been measured separately in a beam test at the CERN SPS H6 beam.

Studies on a 300 k pixel detector telescope

International Nuclear Information System (INIS)

Middelkamp, P.; Antinori, F.; Barberis, D.

1996-01-01

Four silicon pixel detector planes are combined to form a tracking telescope in the lead ion experiment WA97 at CERN with 290 304 sensitive elements each of 75 μm by 500 μm area. An electronic pulse processing circuit is associated with each individual sensing element and the response for ionizing particles is binary with an adjustable threshold. The noise rate for a threshold of 6000 e - has been measured to be less than 10 -10 . The inefficient area due to malfunctioning pixels is 2.8% of the 120 cm 2 . Detector overlaps within one plane have been used to determine the alignment of the components of the plane itself, without need for track reconstruction using external detectors. It is the first time that such a big surface covered with active pixels has been used in a physics experiment. Some aspects concerning inclined particle tracks and time walk have been measured separately in a beam test at the CERN SPS H6 beam. (orig.)

Gamma Spectroscopy with Pixellated CdZnTe Gamma Detectors

International Nuclear Information System (INIS)

Shor, A.; Mardor, I.; Eisen, Y.

2002-01-01

Pixellated CdZnTe detectors are good candidates for room temperature gamma detection requiring spectroscopic performance with imaging capabilities. The CdZnTe materials possess high resistivity and good electron charge transport properties. The poor charge transport for the holes inherent in the CdZnTe material can be circumvented by fabricating the electrodes in any one of a number of structures designed for unipolar charge detection[1]. Recent interest in efficient gamma detection at relatively higher gamma energies has imposed more stringent demands on the CdZnTe material and on detector design and optimization. We developed at Soreq a technique where signals from all pixels and from the common electrode are processed, and then a correction is applied for improving the energy resolution and the photopeak efficiency. For illumination with an un-collimated 133 Ba source , we obtain a combined detector energy resolution of 5.0 % FWHM for the 81 keV peak, and 1.5 % FWHM for the 356 keV peak. We discuss the importance of detector material with high electron (μτ) e for thick Pixellated detectors

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15} n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside...

Modeling radiation damage to pixel sensors in the ATLAS detector

CERN Document Server

Ducourthial, Audrey; The ATLAS collaboration

2017-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of $10^{15}n_{eq}/cm^2$ and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside ...

Geneva University: Pixel Detectors – trends and options for the future

CERN Multimedia

Geneva University

2012-01-01

GENEVA UNIVERSITY École de physique Département de physique nucléaire et corspusculaire 24, quai Ernest-Ansermet 1211 Genève 4 Tél.: (022) 379 62 73 Fax: (022) 379 69 92   Wednesday 25 April 2012 SEMINAIRE DE PHYSIQUE CORPUSCULAIRE Science III, Auditoire 1S081 30Science III, Auditoire 1S081 30 Pixel Detectors – trends and options for the future Prof. Norbert Wermes - University of Bonn  Pixel detectors have been invented in the early 90s with the advancement of micro technologies. With the advent of the LHC, big vertex detectors have demonstrated that the pixel detector type is holding many of the promises it had made before. Meanwhile new, different or just improved variants of the pixel technology are being studied for their suitability for future experiments or experiment upgrades. The talk will address the various pro's and con's comparing hybrid and monolithic pixel technologies and their su...

An algorithm for automatic crystal identification in pixelated scintillation detectors using thin plate splines and Gaussian mixture models.

Science.gov (United States)

Schellenberg, Graham; Stortz, Greg; Goertzen, Andrew L

2016-02-07

A typical positron emission tomography detector is comprised of a scintillator crystal array coupled to a photodetector array or other position sensitive detector. Such detectors using light sharing to read out crystal elements require the creation of a crystal lookup table (CLUT) that maps the detector response to the crystal of interaction based on the x-y position of the event calculated through Anger-type logic. It is vital for system performance that these CLUTs be accurate so that the location of events can be accurately identified and so that crystal-specific corrections, such as energy windowing or time alignment, can be applied. While using manual segmentation of the flood image to create the CLUT is a simple and reliable approach, it is both tedious and time consuming for systems with large numbers of crystal elements. In this work we describe the development of an automated algorithm for CLUT generation that uses a Gaussian mixture model paired with thin plate splines (TPS) to iteratively fit a crystal layout template that includes the crystal numbering pattern. Starting from a region of stability, Gaussians are individually fit to data corresponding to crystal locations while simultaneously updating a TPS for predicting future Gaussian locations at the edge of a region of interest that grows as individual Gaussians converge to crystal locations. The algorithm was tested with flood image data collected from 16 detector modules, each consisting of a 409 crystal dual-layer offset LYSO crystal array readout by a 32 pixel SiPM array. For these detector flood images, depending on user defined input parameters, the algorithm runtime ranged between 17.5-82.5 s per detector on a single core of an Intel i7 processor. The method maintained an accuracy above 99.8% across all tests, with the majority of errors being localized to error prone corner regions. This method can be easily extended for use with other detector types through adjustment of the initial

An algorithm for automatic crystal identification in pixelated scintillation detectors using thin plate splines and Gaussian mixture models

International Nuclear Information System (INIS)

Schellenberg, Graham; Goertzen, Andrew L; Stortz, Greg

2016-01-01

A typical positron emission tomography detector is comprised of a scintillator crystal array coupled to a photodetector array or other position sensitive detector. Such detectors using light sharing to read out crystal elements require the creation of a crystal lookup table (CLUT) that maps the detector response to the crystal of interaction based on the x–y position of the event calculated through Anger-type logic. It is vital for system performance that these CLUTs be accurate so that the location of events can be accurately identified and so that crystal-specific corrections, such as energy windowing or time alignment, can be applied. While using manual segmentation of the flood image to create the CLUT is a simple and reliable approach, it is both tedious and time consuming for systems with large numbers of crystal elements. In this work we describe the development of an automated algorithm for CLUT generation that uses a Gaussian mixture model paired with thin plate splines (TPS) to iteratively fit a crystal layout template that includes the crystal numbering pattern. Starting from a region of stability, Gaussians are individually fit to data corresponding to crystal locations while simultaneously updating a TPS for predicting future Gaussian locations at the edge of a region of interest that grows as individual Gaussians converge to crystal locations. The algorithm was tested with flood image data collected from 16 detector modules, each consisting of a 409 crystal dual-layer offset LYSO crystal array readout by a 32 pixel SiPM array. For these detector flood images, depending on user defined input parameters, the algorithm runtime ranged between 17.5–82.5 s per detector on a single core of an Intel i7 processor. The method maintained an accuracy above 99.8% across all tests, with the majority of errors being localized to error prone corner regions. This method can be easily extended for use with other detector types through adjustment of the initial

An algorithm for automatic crystal identification in pixelated scintillation detectors using thin plate splines and Gaussian mixture models

Science.gov (United States)

Schellenberg, Graham; Stortz, Greg; Goertzen, Andrew L.

2016-02-01

A typical positron emission tomography detector is comprised of a scintillator crystal array coupled to a photodetector array or other position sensitive detector. Such detectors using light sharing to read out crystal elements require the creation of a crystal lookup table (CLUT) that maps the detector response to the crystal of interaction based on the x-y position of the event calculated through Anger-type logic. It is vital for system performance that these CLUTs be accurate so that the location of events can be accurately identified and so that crystal-specific corrections, such as energy windowing or time alignment, can be applied. While using manual segmentation of the flood image to create the CLUT is a simple and reliable approach, it is both tedious and time consuming for systems with large numbers of crystal elements. In this work we describe the development of an automated algorithm for CLUT generation that uses a Gaussian mixture model paired with thin plate splines (TPS) to iteratively fit a crystal layout template that includes the crystal numbering pattern. Starting from a region of stability, Gaussians are individually fit to data corresponding to crystal locations while simultaneously updating a TPS for predicting future Gaussian locations at the edge of a region of interest that grows as individual Gaussians converge to crystal locations. The algorithm was tested with flood image data collected from 16 detector modules, each consisting of a 409 crystal dual-layer offset LYSO crystal array readout by a 32 pixel SiPM array. For these detector flood images, depending on user defined input parameters, the algorithm runtime ranged between 17.5-82.5 s per detector on a single core of an Intel i7 processor. The method maintained an accuracy above 99.8% across all tests, with the majority of errors being localized to error prone corner regions. This method can be easily extended for use with other detector types through adjustment of the initial

X-ray micro-beam characterization of a small pixel spectroscopic CdTe detector

Science.gov (United States)

Veale, M. C.; Bell, S. J.; Seller, P.; Wilson, M. D.; Kachkanov, V.

2012-07-01

A small pixel, spectroscopic, CdTe detector has been developed at the Rutherford Appleton Laboratory (RAL) for X-ray imaging applications. The detector consists of 80 × 80 pixels on a 250 μm pitch with 50 μm inter-pixel spacing. Measurements with an 241Am γ-source demonstrated that 96% of all pixels have a FWHM of better than 1 keV while the majority of the remaining pixels have FWHM of less than 4 keV. Using the Diamond Light Source synchrotron, a 10 μm collimated beam of monochromatic 20 keV X-rays has been used to map the spatial variation in the detector response and the effects of charge sharing corrections on detector efficiency and resolution. The mapping measurements revealed the presence of inclusions in the detector and quantified their effect on the spectroscopic resolution of pixels.

The hardware of the ATLAS Pixel Detector Control System

International Nuclear Information System (INIS)

Henss, T; Andreani, A; Boek, J; Boyd, G; Citterio, M; Einsweiler, K; Kersten, S; Kind, P; Lantzsch, K; Latorre, S; Maettig, P; Meroni, C; Sabatini, F; Schultes, J

2007-01-01

The innermost part of the ATLAS (A Toroidal LHC ApparatuS) experiment, which is currently under construction at the LHC (Large Hadron Collider), will be a silicon pixel detector comprised of 1744 individual detector modules. To operate these modules, the readout electronics, and other detector components, a complex power supply and control system is necessary. The specific powering and control requirements, as well as the custom made components of our power supply and control systems, are described. These include remotely programmable regulator stations, the power supply system for the optical transceivers, several monitoring units, and the Interlock System. In total, this comprises the Pixel Detector Control System (DCS)

Tracking performance of a single-crystal and a polycrystalline diamond pixel-detector

Energy Technology Data Exchange (ETDEWEB)

Menasce, D.; et al.

2013-06-01

We present a comparative characterization of the performance of a single-crystal and a polycrystalline diamond pixel-detector employing the standard CMS pixel readout chips. Measurements were carried out at the Fermilab Test Beam Facility, FTBF, using protons of momentum 120 GeV/c tracked by a high-resolution pixel telescope. Particular attention was directed to the study of the charge-collection, the charge-sharing among adjacent pixels and the achievable position resolution. The performance of the single-crystal detector was excellent and comparable to the best available silicon pixel-detectors. The measured average detection-efficiency was near unity, ε = 0.99860±0.00006, and the position-resolution for shared hits was about 6 μm. On the other hand, the performance of the polycrystalline detector was hampered by its lower charge collection distance and the readout chip threshold. A new readout chip, capable of operating at much lower threshold (around 1 ke^$-$), would be required to fully exploit the potential performance of the polycrystalline diamond pixel-detector.

Development of an ultra-fast X-ray camera using hybrid pixel detectors

International Nuclear Information System (INIS)

Dawiec, A.

2011-05-01

The aim of the project whose work described in this thesis is part, was to design a high-speed X-ray camera using hybrid pixels applied to biomedical imaging and for material science. As a matter of fact the hybrid pixel technology meets the requirements of these two research fields, particularly by providing energy selection and low dose imaging capabilities. In this thesis, high frame rate X-ray imaging based on the XPAD3-S photons counting chip is presented. Within a collaboration between CPPM, ESRF and SOLEIL, three XPAD3 cameras were built. Two of them are being operated at the beamline of the ESRF and SOLEIL synchrotron facilities and the third one is embedded in the PIXSCAN II irradiation setup of CPPM. The XPAD3 camera is a large surface X-ray detector composed of eight detection modules of seven XPAD3-S chips each with a high-speed data acquisition system. The readout architecture of the camera is based on the PCI Express interface and on programmable FPGA chips. The camera achieves a readout speed of 240 images/s, with maximum number of images limited by the RAM memory of the acquisition PC. The performance of the device was characterized by carrying out several high speed imaging experiments using the PIXSCAN II irradiation setup described in the last chapter of this thesis. (author)

3D silicon pixel detectors for the High-Luminosity LHC

CERN Document Server

Lange, J.

2016-01-01

3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC upgrade of the ATLAS pixel detector. 3D detectors are already in use today in the ATLAS IBL and AFP experiments. These are based on 50x250 um2 large pixels connected to the FE-I4 readout chip. Detectors of this generation were irradiated to HL-LHC fluences and demonstrated excellent radiation hardness with operational voltages as low as 180 V and power dissipation of 12--15 mW/cm2 at a fluence of about 1e16 neq/cm2, measured at -25 degree C. Moreover, to cope with the higher occupancies expected at the HL-LHC, a first run of a new generation of 3D detectors designed for the HL-LHC was produced at CNM with small pixel sizes of 50x50 and 25x100 um2, matched to the FE-I4 chip. They demonstrated a good performance in the laboratory and in beam tests with hit efficiencies of about 97% at already 1--2V before irradiation.

A pixel segmented silicon strip detector for ultra fast shaping at low noise and low power consumption

International Nuclear Information System (INIS)

Misiakos, K.; Kavadias, S.

1996-01-01

A new radiation imaging device is proposed based on strips segmented into small pixels. Every pixel contains a submicron transistor that is normally biased in weak inversion. The ionization charge, upon collection by the pixel, changes the bias of the transistor to strong inversion and supplies a current up to several tens of a microA. This is a consequence of the small pixel capacitance (12 fF). The drains and sources of the transistors on the same row and column are shorted to bus lines that effectively become the Y and X coordinates. These bus lines are connected to the off chip ICON amplifiers to provide a 10 ns peaking time at a noise of about 150 electrons and 1 nW power consumption, for a 10x10 cm 2 detector and a MIP excitation. The noise performance is dominated by the ICON transistors. The cross talk between adjacent strips can be kept at a few percentage points provided a low transistor bias current is used

3D track reconstruction capability of a silicon hybrid active pixel detector

Energy Technology Data Exchange (ETDEWEB)

Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri [Czech Technical University in Prague, Institute of Experimental and Applied Physics, Praha (Czech Republic); Burian, Petr; Broulim, Pavel [Czech Technical University in Prague, Institute of Experimental and Applied Physics, Praha (Czech Republic); University of West Bohemia, Faculty of Electrical Engineering, Pilsen (Czech Republic); Jakubek, Jan [Advacam s.r.o., Praha (Czech Republic)

2017-06-15

Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 x 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for ''4D'' particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation (x,y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm. (orig.)

3D track reconstruction capability of a silicon hybrid active pixel detector

Science.gov (United States)

Bergmann, Benedikt; Pichotka, Martin; Pospisil, Stanislav; Vycpalek, Jiri; Burian, Petr; Broulim, Pavel; Jakubek, Jan

2017-06-01

Timepix3 detectors are the latest generation of hybrid active pixel detectors of the Medipix/Timepix family. Such detectors consist of an active sensor layer which is connected to the readout ASIC (application specific integrated circuit), segmenting the detector into a square matrix of 256 × 256 pixels (pixel pitch 55 μm). Particles interacting in the active sensor material create charge carriers, which drift towards the pixelated electrode, where they are collected. In each pixel, the time of the interaction (time resolution 1.56 ns) and the amount of created charge carriers are measured. Such a device was employed in an experiment in a 120 GeV/c pion beam. It is demonstrated, how the drift time information can be used for "4D" particle tracking, with the three spatial dimensions and the energy losses along the particle trajectory (dE/dx). Since the coordinates in the detector plane are given by the pixelation ( x, y), the x- and y-resolution is determined by the pixel pitch (55 μm). A z-resolution of 50.4 μm could be achieved (for a 500 μm thick silicon sensor at 130 V bias), whereby the drift time model independent z-resolution was found to be 28.5 μm.

Results from the Commissioning of the ATLAS Pixel Detector

CERN Document Server

Strandberg, S

2009-01-01

The ATLAS pixel detector is a high resolution, silicon based, tracking detector with its innermost layer located only 5 cm away from the ATLAS interaction point. It is designed to provide good hit resolution and low noise, both important qualities for pattern recognition and for finding secondary vertices originating from decays of long-lived particles. The pixel detector has 80 million readout channels and is built up of three barrel layers and six disks, three on each side of the barrel. The detector was installed in the center of ATLAS in June 2007 and is currently being calibrated and commissioned. Details from the installation, commissioning and calibration are presented together with the current status.

A silicon pixel detector with routing for external VLSI read-out

International Nuclear Information System (INIS)

Thomas, S.L.; Seller, P.

1988-07-01

A silicon pixel detector with an array of 32 by 16 hexagonal pixels has been designed and is being built on high resistivity silicon. The detector elements are reverse biased diodes consisting of p-implants in an n-type substrate and are fully depleted from the front to the back of the wafer. They are intended to measure high energy ionising particles traversing the detector. The detailed design of the pixels, their layout and method of read-out are discussed. A number of test structures have been incorporated onto the wafer to enable measurements to be made on individual pixels together with a variety of active devices. The results will give a better understanding of the operation of the pixel array, and will allow testing of computer simulations of more elaborate structures for the future. (author)

Modelling of the small pixel effect in gallium arsenide X-ray imaging detectors

CERN Document Server

Sellin, P J

1999-01-01

A Monte Carlo simulation has been carried out to investigate the small pixel effect in highly pixellated X-ray imaging detectors fabricated from semi-insulating gallium arsenide. The presence of highly non-uniform weighting fields in detectors with a small pixel geometry causes the majority of the induced signal to be generated when the moving charges are close to the pixellated contacts. The response of GaAs X-ray imaging detectors is further complicated by the presence of charge trapping, particularly of electrons. In this work detectors are modelled with a pixel pitch of 40 and 150 mu m, and with thicknesses of 300 and 500 mu m. Pulses induced in devices with 40 mu m pixels are due almost totally to the movement of the lightly-trapped holes and can exhibit significantly higher charge collection efficiencies than detectors with large electrodes, in which electron trapping is significant. Details of the charge collection efficiencies as a function of interaction depth in the detector and of the incident phot...

Operational Experience and Performance with the ATLAS Pixel detector

CERN Document Server

Martin, Christopher Blake; The ATLAS collaboration

2018-01-01

The tracking performance of the ATLAS detector relies critically on its 4-layer Pixel Detector, that has undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the Large Hadron Collider, with record breaking instantaneous luminosities of $1.3\\times10^{34}\\text{cm}^{{-2}}\\text{s}^{{-1}}$ recently surpassed. The key status and performance metrics of the ATLAS Pixel Detector are summarized, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described, with special emphasis to radiation damage experience.

Operational Experience and Performance with the ATLAS Pixel detector

CERN Document Server

Martin, Christopher Blake; The ATLAS collaboration

2018-01-01

The tracking performance of the ATLAS detector relies critically on its 4-layer Pixel Detector, that has undergone significant hardware and software upgrades to meet the challenges imposed by the higher collision energy, pileup and luminosity that are being delivered by the Large Hadron Collider, with record breaking instantaneous luminosities of 1.3 x 10^34 cm-2 s-1 recently surpassed. The key status and performance metrics of the ATLAS Pixel Detector are summarised, and the operational experience and requirements to ensure optimum data quality and data taking efficiency are described, with special emphasis to radiation damage experience.

Modeling radiation damage to pixel sensors in the ATLAS detector

Science.gov (United States)

Ducourthial, A.

2018-03-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC) . As the closest detector component to the interaction point, these detectors will be subject to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC) [1], the innermost layers will receive a fluence in excess of 1015 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is essential in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects on the ATLAS pixel sensors for the first time. In addition to thoroughly describing the setup, we present first predictions for basic pixel cluster properties alongside early studies with LHC Run 2 proton-proton collision data.

Silicon Sensors for the Upgrades of the CMS Pixel Detector

CERN Document Server

Centis Vignali, Matteo; Schleper, Peter

2015-01-01

The Compact Muon Solenoid (CMS) is a general purpose detector at the Large Hadron Collider (LHC). The LHC luminosity is constantly increased through upgrades of the accel- erator and its injection chain. Two major upgrades will take place in the next years. The rst upgrade involves the LHC injector chain and allows the collider to achieve a luminosity of about 2 10 34 cm-2 s-1 A further upgrade of the LHC foreseen for 2025 will boost its luminosity to 5 10 34 cm-2 s1. As a consequence of the increased luminosity, the detectors need to be upgraded. In particular, the CMS pixel detector will undergo two upgrades in the next years. The rst upgrade (phase I) consists in the substitution of the current pixel detector in winter 2016/2017. The upgraded pixel detector will implement new readout elec- tronics that allow ecient data taking up to a luminosity of 2 10 34 cm-2s-1,twice as much as the LHC design luminosity. The modules that will constitute the upgraded detector are being produced at dierent institutes. Ham...

Leakage current measurements on pixelated CdZnTe detectors

International Nuclear Information System (INIS)

Dirks, B.P.F.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

2006-01-01

In the field of the R and D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9x0.9 mm 2 ) or 256 (0.5x0.5 mm 2 ) pixels, surrounded by a guard ring and operate in the energy ranging from several keV to 1 MeV, at temperatures between -20 and +20 o C. A critical parameter in the characterisation of these detectors is the leakage current per pixel under polarisation (∼50-500 V/mm). In operation mode each pixel will be read-out by an integrated spectroscopy channel of the multi-channel IDeF-X ASIC currently developed in our lab. The design and functionality of the ASIC depends directly on the direction and value of the current. A dedicated and highly insulating electronics circuit is designed to automatically measure the current in each individual pixel, which is in the order of tens of pico-amperes. Leakage current maps of different CdZnTe detectors of 2 and 6 mm thick and at various temperatures are presented and discussed. Defect density diagnostics have been performed by calculation of the activation energy of the material

Investigation of photon counting pixel detectors for X-ray spectroscopy and imaging

Energy Technology Data Exchange (ETDEWEB)

Talla, Patrick Takoukam

2011-04-07

The Medipix2 and Medipix3 detectors are hybrid pixelated photon counting detectors with a pixel pitch of 55 {mu}m. The sensor material used in this thesis was silicon. Because of their small pixel size they suffer from charge sharing i.e. an incoming photon can be registered by more than one pixel. In order to correct for charge sharing due to lateral diffusion of charge carriers, the Medipix3 detector was developed: with its Charge Summing Mode, the charge collected in a cluster of 2 x 2 pixel is added up and attributed to only one pixel whose counter is incremented. The adjustable threshold of the detectors allows to count the photons and to gain information on their energy. The main purposes of the thesis are to investigate spectral and imaging properties of pixelated photon counting detectors from the Medipix family such as Medipix2 and Medipix3. The investigations are based on simulations and measurements. In order to investigate the spectral properties of the detectors measurements were performed using fluorescence lines of materials such as molybdenum, silver but also some radioactive sources such as Am-241 or Cd-109. From the measured data, parameters like the threshold dispersion and the gain variation from pixel-to-pixel were extracted and used as input in the Monte Carlo code ROSI to model the responses of the detector to monoenergetic photons. The measured data are well described by the simulations for Medipix2 and for Medipix3 operating in Charge Summing Mode. Due to charge sharing and due to the energy dependence of attenuation processes in silicon and to Compton scattering the incoming and the measured spectrum differ substantially from each other. Since the responses to monoenergetic photons are known, a deconvolution was performed to determine the true incoming spectrum. Several direct and iterative methods were successfully applied on measured and simulated data of an X-ray tube and radioactive sources. The knowledge of the X-ray spectrum is

Investigation of photon counting pixel detectors for X-ray spectroscopy and imaging

International Nuclear Information System (INIS)

Talla, Patrick Takoukam

2011-01-01

The Medipix2 and Medipix3 detectors are hybrid pixelated photon counting detectors with a pixel pitch of 55 μm. The sensor material used in this thesis was silicon. Because of their small pixel size they suffer from charge sharing i.e. an incoming photon can be registered by more than one pixel. In order to correct for charge sharing due to lateral diffusion of charge carriers, the Medipix3 detector was developed: with its Charge Summing Mode, the charge collected in a cluster of 2 x 2 pixel is added up and attributed to only one pixel whose counter is incremented. The adjustable threshold of the detectors allows to count the photons and to gain information on their energy. The main purposes of the thesis are to investigate spectral and imaging properties of pixelated photon counting detectors from the Medipix family such as Medipix2 and Medipix3. The investigations are based on simulations and measurements. In order to investigate the spectral properties of the detectors measurements were performed using fluorescence lines of materials such as molybdenum, silver but also some radioactive sources such as Am-241 or Cd-109. From the measured data, parameters like the threshold dispersion and the gain variation from pixel-to-pixel were extracted and used as input in the Monte Carlo code ROSI to model the responses of the detector to monoenergetic photons. The measured data are well described by the simulations for Medipix2 and for Medipix3 operating in Charge Summing Mode. Due to charge sharing and due to the energy dependence of attenuation processes in silicon and to Compton scattering the incoming and the measured spectrum differ substantially from each other. Since the responses to monoenergetic photons are known, a deconvolution was performed to determine the true incoming spectrum. Several direct and iterative methods were successfully applied on measured and simulated data of an X-ray tube and radioactive sources. The knowledge of the X-ray spectrum is

Study of planar pixel sensors hardener to radiations for the upgrade of the ATLAS vertex detector

International Nuclear Information System (INIS)

Benoit, M.

2011-05-01

In this work, we present a study, using TCAD (Technology Computer-Assisted Design) simulation, of the possible methods of designing planar pixel sensors by reducing their inactive area and improving their radiation hardness for use in the Insertable B-Layer (IBL) project and for SLHC upgrade phase for the ATLAS experiment. Different physical models available have been studied to develop a coherent model of radiation damage in silicon that can be used to predict silicon pixel sensor behavior after exposure to radiation. The Multi-Guard Ring Structure, a protection structure used in pixel sensor design was studied to obtain guidelines for the reduction of inactive edges detrimental to detector operation while keeping a good sensor behavior through its lifetime in the ATLAS detector. A campaign of measurement of the sensor process parameters and electrical behavior to validate and calibrate the TCAD simulation models and results are also presented. A model for diode charge collection in highly irradiated environment was developed to explain the high charge collection observed in highly irradiated devices. A simple planar pixel sensor digitization model to be used in test beam and full detector system is detailed. It allows for easy comparison between experimental data and prediction by the various radiation damage models available. The digitizer has been validated using test beam data for unirradiated sensors and can be used to produce the first full scale simulation of the ATLAS detector with the IBL that include sensor effects such as slim edge and thinning of the sensor. (author)

Geometry simulation and physics with the CMS forward pixel detector

Energy Technology Data Exchange (ETDEWEB)

Parashar, N [Purdue University Calumet, Hammond, Indiana (United States)], E-mail: Neeti@fnal.gov

2008-06-15

The Forward Pixel Detector of CMS is an integral part of the Tracking system, which will play a key role in addressing the full physics potential of the collected data. It has a very complex geometry that encompasses multilayer structure of its detector modules. This presentation describes the development of geometry simulation for the Forward Pixel Detector. A new geometry package has been developed, which uses the detector description database (DDD) interface for the XML (eXtensive Markup Language) to GEANT simulation. This is necessary for digitization and GEANT4 reconstruction software for tracking. The expected physics performance is also discussed.

Geometry simulation and physics with the CMS forward pixel detector

International Nuclear Information System (INIS)

Parashar, N

2008-01-01

The Forward Pixel Detector of CMS is an integral part of the Tracking system, which will play a key role in addressing the full physics potential of the collected data. It has a very complex geometry that encompasses multilayer structure of its detector modules. This presentation describes the development of geometry simulation for the Forward Pixel Detector. A new geometry package has been developed, which uses the detector description database (DDD) interface for the XML (eXtensive Markup Language) to GEANT simulation. This is necessary for digitization and GEANT4 reconstruction software for tracking. The expected physics performance is also discussed

Commissioning and first results from the CMS phase-1 upgrade pixel detector

CERN Document Server

Sonneveld, Jorine Mirjam

2017-01-01

The phase~1 upgrade of the CMS pixel detector has been designed to maintain the tracking performance at instantaneous luminosities of $2 \\times 10^{34} \\mathrm{~cm}^{-2} \\mathrm{~s}^{-1}$. Both barrel and endcap disk systems now feature one extra layer (4 barrel layers and 3 endcap disks), and a digital readout that provides a large enough bandwidth to read out its 124M pixel channels (87.7 percent more pixels compared to the previous system). The backend control and readout systems have been upgraded accordingly from VME-based to micro-TCA-based ones. The detector is now also fitted with a bi-phase CO$_2$ cooling system that reduces the material budget in the tracking region. The detector has been installed inside CMS at the start of 2017 and is now taking data. These proceedings discuss experiences in the commissioning and operation of the CMS phase~1 pixel detector. The first results from the CMS phase~1 pixel detector with this year's LHC proton-proton collision data are presented. ...

Optimization of detector pixel size for stent visualization in x-ray fluoroscopy

International Nuclear Information System (INIS)

Jiang Yuhao; Wilson, David L.

2006-01-01

Pixel size is of great interest in the flat-panel detector design because of its potential impact on image quality. In the particular case of angiographic x-ray fluoroscopy, small pixels are required in order to adequately visualize interventional devices such as guidewires and stents which have wire diameters as small as 200 and 50 μm, respectively. We used quantitative experimental and modeling techniques to investigate the optimal pixel size for imaging stents. Image quality was evaluated by the ability of subjects to perform two tasks: detect the presence of a stent and discriminate a partially deployed stent from a fully deployed one in synthetic images. With measurements at 50, 100, 200, and 300 μm, the 100 μm pixel size gave the maximum contrast sensitivity for the detection experiment with the idealized direct detector. For an idealized indirect detector with a scintillating layer, an optimal pixel size was obtained at 200 μm pixel size. A channelized human observer model predicted a peak at 150 and 170 μm, for the idealized direct and indirect detectors, respectively. With regard to the stent deployment task for both detector types, smaller pixel sizes are favored and there is a steep drop in performance with larger pixels. In general, with the increasing exposures, the model and measurements give the enhanced contrast sensitivities and a smaller optimal pixel size. The effects of electronic noise and fill factor were investigated using the model. We believe that the experimental results and human observer model predications can help guide the flat-panel detector design. In addition, the human observer model should work on the similar images and be applicable to the future model and actual flat-panel implementations

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

CERN Document Server

Savic, Natascha

2016-01-01

In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023-2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more ra- diation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 {\\mu}m recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of th...

Test-beam results of a SOI pixel detector prototype

CERN Document Server

Bugiel, Roma; Dannheim, Dominik; Fiergolski, Adrian; Hynds, Daniel; Idzik, Marek; Kapusta, P; Kucewicz, Wojciech; Munker, Ruth Magdalena; Nurnberg, Andreas Matthias

2018-01-01

This paper presents the test-beam results of a monolithic pixel-detector prototype fabricated in 200 nm Silicon-On-Insulator (SOI) CMOS technology. The SOI detector was tested at the CERN SPS H6 beam line. The detector is fabricated on a 500 μm thick high-resistivity float- zone n-type (FZ-n) wafer. The pixel size is 30 μm × 30 μm and its readout uses a source- follower configuration. The test-beam data are analysed in order to compute the spatial resolution and detector efficiency. The analysis chain includes pedestal and noise calculation, cluster reconstruction, as well as alignment and η-correction for non-linear charge sharing. The results show a spatial resolution of about 4.3 μm.

A MCM-D-type module for the ATLAS pixel detector

CERN Document Server

Becks, K H; Ehrmann, O; Gerlach, P; Gregor, I M; Pieters, P; Topper, M; Truzzi, C; Wolf, J

1999-01-01

For the ATLAS experiment at the planned Large Hadron Collider LHC at CERN hybrid pixel detectors are being built as innermost layers of the inner tracking detector system. Modules are the basic building blocks of the ATLAS pixel $9 detector. A module consists of a sensor tile with an active area of 16.4 mm*60.4 mm, 16 read out IC's, each serving 24*160 pixel unit cells, a module controller chip, an optical transceiver and the local signal interconnection and $9 power distribution busses. The dies are attached by flip-chip assembly to the sensor diodes and the local busses. In the following a module based on MCM-D technology will be discussed and prototype results will be presented.

The Upgraded Pixel Detector of the ATLAS Experiment for Run-2 at the LHC

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00084948; The ATLAS collaboration

2016-01-01

Run-2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130 nm technology. In addition the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning and performance of the 4-layer Pixel Detector, in particular the IBL, will be presented using collision data.

Online Calibration and Performance of the ATLAS Pixel Detector

CERN Document Server

Keil, M

2011-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN. It consists of 1744 silicon sensors equipped with approximately 80 million electronic channels, providing typically three measurement points with high resolution for particles emerging from the beam-interaction region, thus allowing measuring particle tracks and secondary vertices with very high precision. The readout system of the Pixel Detector is based on a bi-directional optical data transmission system between the detector and the data acquisition system with an individual link for each of the 1744 modules. Signal conversion components are located on both ends, approximately 80 m apart. This paper describes the tuning and calibration of the optical links and the detector modules, including measurements of threshold, noise, charge measurement, timing performance and the sensor leakage current.

Alignment of the upgraded CMS pixel detector

CERN Document Server

Schroder, Matthias

2018-01-01

The all-silicon tracking system of the CMS experiment provides excellent resolution for charged tracks and an efficient tagging of heavy-flavour jets. After a new pixel detector has been installed during the LHC technical stop at the beginning of 2017, the positions, orientations, and surface curvatures of the sensors needed to be determined with a precision at the order of a few micrometres to ensure the required physics performance. This is far beyond the mechanical mounting precision but can be achieved using a track-based alignment procedure that minimises the track-hit residuals of reconstructed tracks. The results are carefully validated with data-driven methods. In this article, results of the CMS tracker alignment in 2017 from the early detector-commissioning phase and the later operation are presented, that were derived using several million reconstructed tracks in pp-collision and cosmic-ray data. Special emphasis is put on the alignment of the new pixel detector.

The Dosepix detector—an energy-resolving photon-counting pixel detector for spectrometric measurements

CERN Document Server

Zang, A; Ballabriga, R; Bisello, F; Campbell, M; Celi, J C; Fauler, A; Fiederle, M; Jensch, M; Kochanski, N; Llopart, X; Michel, N; Mollenhauer, U; Ritter, I; Tennert, F; Wölfel, S; Wong, W; Michel, T

2015-01-01

The Dosepix detector is a hybrid photon-counting pixel detector based on ideas of the Medipix and Timepix detector family. 1 mm thick cadmium telluride and 300 μm thick silicon were used as sensor material. The pixel matrix of the Dosepix consists of 16 x 16 square pixels with 12 rows of (200 μm)2 and 4 rows of (55 μm)2 sensitive area for the silicon sensor layer and 16 rows of pixels with 220 μm pixel pitch for CdTe. Besides digital energy integration and photon-counting mode, a novel concept of energy binning is included in the pixel electronics, allowing energy-resolved measurements in 16 energy bins within one acquisition. The possibilities of this detector concept range from applications in personal dosimetry and energy-resolved imaging to quality assurance of medical X-ray sources by analysis of the emitted photon spectrum. In this contribution the Dosepix detector, its response to X-rays as well as spectrum measurements with Si and CdTe sensor layer are presented. Furthermore, a first evaluation wa...

The ALICE silicon pixel detector system

International Nuclear Information System (INIS)

Kapusta, S.

2009-01-01

front-end to the on-detector electronics are from aluminum. In this thesis, I present my involvement in the ALICE SPD project, I summarize the design, the construction, and the testing phase of the ALICE SPD. My involvement in the ALICE DCS project is also presented. During the past years the ALICE SPD collaboration has carried out four testbeams. e primary objective of these testbeams was the validation of the pixel ASICs, the sensors, the read-out electronics and the online systems - Data Acquisition System (DAQ), Trigger (TRG) and Detector Control System DCS with their so w are and offline as well. e pixel chip and sensor prototypes were studied under different conditions (threshold scan, different inclination angles with respect to the beam, bias voltage scan, etc.). Tests of thick and also thin single chip assemblies and chip ladders as designed to be used in the ALICE experiment were also performed. During and a e r the testbeams I developed so w are to verify the data quality, to merge 2 data pixels offline, to correlate the spatial information from different planes, to run a complex offline analysis of the testbeam data, including hit maps, integrated hit maps, event by event analysis, efficiency, multiplicity, cluster size, etc. e prototype full read-out chain with two ladders, the DAQ, Trigger and DCS online systems with their so w are and also offline code were tested and validated during the testbeams. Configuration, readout and control of the SPD is performed via the Detector Control System DCS. As a member of the ALICE Control Coordination ACC team, I had the opportunity to participate in the design, development, commissioning and operation of this system. I took responsibility for the database systems and developed mechanisms for configuring the Front end Electronics (FERO). e SPD has been used as a working example for other detector groups which adopted this approach. I developed and implemented a mechanism of conditions data archival and participated in

Pixellated thallium bromide detectors for gamma-ray spectroscopy and imaging

Energy Technology Data Exchange (ETDEWEB)

Onodera, T. E-mail: tosiyuki@smail.tohtech.ac.jp; Hitomi, K.; Shoji, T.; Hiratate, Y

2004-06-01

Recently, pixellated semiconductor detectors exhibit high-energy resolution, which have been studied actively and fabricated from CdTe, CZT and HgI{sub 2}. Thallium bromide (TlBr) is a compound semiconductor characterized with its high atomic numbers (Tl=81, Br=35) and high density (7.56 g/cm{sup 3}). Thus, TlBr exhibits higher photon stopping power than other semiconductor materials used for radiation detector fabrication such as CdTe, CZT and HgI{sub 2}. The wide band gap of TlBr (2.68 eV) permits the detectors low-noise operation at around room temperature. Our studies made an effort to fabricate pixellated TlBr detectors had sufficient detection efficiency and good charge collection efficiency. In this study, pixellated TlBr detectors were fabricated from the crystals purified by the multipass zone-refining method and grown by the horizontal traveling molten zone (TMZ) method. The TlBr detector has a continuous cathode over one crystal surface and 3x3 pixellated anodes (0.57x0.57 mm{sup 2} each) surrounded by a guard ring on the opposite surface. The electrodes were realized by vacuum evaporation of palladium through a shadow mask. Typical thickness of the detector was 2 mm. Spectrometric performance of the TlBr detectors was tested by irradiating them with {sup 241}Am (59.5 keV), {sup 57}Co (122 keV) and {sup 137}Cs (662 keV) gamma-ray sources at temperature of -20 deg. C. Energy resolutions (FWHM) were measured to be 4.0, 6.0 and 9.7 keV for 59.5, 122 and 662 keV gamma-rays, respectively.

Gas filled prototype of a CdZnTe pixel detector

International Nuclear Information System (INIS)

Ramsey, B.; Sharma, D.; Sipila, H.; Gostilo, V.; Loupilov, A.

2001-01-01

CdZnTe pixel structures are currently the most promising detectors for the focal planes of hard X-ray telescopes, for astronomical observation in the range 5-100 keV. In Sharma et al. (Proc. SPIE 3765 (1999) 822) and Ramsey et al. (Nucl. Instrum. Methods A 458 (2001) 55) we presented preliminary results on the development of prototype 4x4 CdZnTe imaging detectors operated under vacuum. These pixel detectors were installed inside vacuum chambers on three-stage Peltier coolers providing detector temperatures down to -40 deg. C. A miniature sputter ion pump inside each chamber maintained the necessary vacuum of 10 -5 Torr. At a temperature of -20 deg. C we achieved an FWHM energy resolution of between 2% and 3% at 60 keV and ∼15% at 5.9 keV; however, the dependency on temperature was weak and at +20 deg. C the respective resolutions were 3% and 20%. As the detectors could be operated at room temperature without loss of their good characteristics it was possible to exclude the sputter ion pump and fill the chamber with dry nitrogen instead. We have tested a nitrogen-filled CdZnTe (5x5x1 mm 3 ) prototype having 0.65x0.65 mm 2 readout pads on a 0.75 mm pitch. The interpixel resistance at an applied voltage of 10 V was higher than 50 GΩ and the pixel leakage currents at room temperature with a bias of 200 V between each pad and the common electrode did not exceed 0.8 nA. The pixel detector inside the microassembly, which also contained the input stages of the preamplifiers, was installed on a Peltier cooler to maintain the detector temperature at +20 deg. C. To define real leakage currents of the pixels in their switched-on state we have checked the voltage on the preamplifiers feedback resistors. The resulting currents were 10-50 pA at a detector bias of 500 V. Under test, the typical energy resolution per pixel at +20 deg. C was ∼3% at energy 59.6 keV and ∼20% at energy 5.9 keV, which are similar to the values obtained in the vacuum prototype at room temperature

Fabrication of ATLAS pixel detector prototypes at IRST

International Nuclear Information System (INIS)

Boscardin, M.; Betta, G.-F. Dalla; Gregori, P.; Zen, M.; Zorzi, N.

2001-01-01

We report on the development of a fabrication technology for n-on-n silicon pixel detectors oriented to the ATLAS experiment at LHC. The main processing issues and some selected results from the electrical characterization of detector prototypes and related test structures are presented and discussed

CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

Energy Technology Data Exchange (ETDEWEB)

Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B. E-mail: bo.jakobsson@kosufy.lu.se; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J

2003-03-11

We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 {mu}m Si detector, a second 300 {mu}m (or possibly 500 {mu}m) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 {mu}m Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 {mu}m Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution {<=}8%, while the standard 300 {mu}m detectors have {<=}2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10{sup 10} alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented.

CHICSi - a compact ultra-high vacuum compatible detector system for nuclear reaction experiments at storage rings. II. Detectors

International Nuclear Information System (INIS)

Golubev, P.; Avdeichikov, V.; Carlen, L.; Jakobsson, B.; Siwek, A.; Veldhuizen, E.J. van; Westerberg, L.; Whitlow, H.J.

2003-01-01

We describe the detectors for identification of charged particles and fragments in CHICSi, a large solid angle multi-telescope system mounted inside an ultra-high vacuum (UHV), cluster-jet target chamber. CHICSi performs nuclear reaction experiments at storage rings. The telescopes consist of a first very thin, 10-14 μm Si detector, a second 300 μm (or possibly 500 μm) ion implanted Si detector supplemented by a 6 mm GSO(Ce) scintillator read out by a photodiode (PD) or by a third 300 μm Si detector. The telescopes provide full charge separation up to Z=17 and mass resolution up to A=9 in the energy range 0.7-60A MeV. The thin p-i-n diode detector, etched out from a 280 μm Si wafer, and the GSO/PD detector, both exclusively developed for CHICSi, provide an energy resolution ≤8%, while the standard 300 μm detectors have ≤2% energy resolution. Radiation stability of the Si detectors is confirmed up to an integrated flux of 10 10 alpha particles. The GSO detector has 70% light collection efficiency with the optical coupling to the PD a simple open, 0.2 mm, gap. A new method, developed to perform absolute energy calibration for the GSO/PD detector is presented

arXiv Performance verification of the CMS Phase-1 Upgrade Pixel detector

CERN Document Server

Veszpremi, Viktor

2017-12-04

The CMS tracker consists of two tracking systems utilizing semiconductor technology: the inner pixel and the outer strip detectors. The tracker detectors occupy the volume around the beam interaction region between 3 cm and 110 cm in radius and up to 280 cm along the beam axis. The pixel detector consists of 124 million pixels, corresponding to about 2 m 2 total area. It plays a vital role in the seeding of the track reconstruction algorithms and in the reconstruction of primary interactions and secondary decay vertices. It is surrounded by the strip tracker with 10 million read-out channels, corresponding to 200 m 2 total area. The tracker is operated in a high-occupancy and high-radiation environment established by particle collisions in the LHC . The current strip detector continues to perform very well. The pixel detector that has been used in Run 1 and in the first half of Run 2 was, however, replaced with the so-called Phase-1 Upgrade detector. The new system is better suited to match the increased inst...

The construction of the phase 1 upgrade of the CMS pixel detector

CERN Document Server

Weber, Hannsjorg Artur

2017-01-01

The innermost layers of the original CMS tracker were built out of pixel detectors arranged in three barrel layers and two forward disks in each endcap. The original CMS detector was designed for the nominal instantaneous LHC luminosity of $1\\times10^{34}\\,\\text{cm}^{-2}\\text{s}^{-1}$. Under the conditions expected in the coming years, which will see an increase of a factor two of the instantaneous luminosity, the CMS pixel detector would have seen a dynamic inefficiency caused by data losses due to buffer overflows. For this reason the CMS collaboration has installed during the recent extended end of year shutdown a replacement pixel detector. The phase-1 upgrade of the CMS pixel detector will operate at high efficiency at an instantaneous luminosity of $2\\times10^{34}\\,\\text{cm}^{-2}\\text{s}^{-1}$ with increased detector acceptance and additional redundancy for the tracking, while at the same time reducing the material budget. These goals are achieved using a new read-out chip and modified powering and rea...

Design and Performance of the CMS Pixel Detector Readout Chip

CERN Document Server

Kästli, H C; Erdmann, W; Hörmann, C; Horisberger, R P; Kotlinski, D; Meier, B; Hoermann, Ch.

2006-01-01

The readout chip for the CMS pixel detector has to deal with an enormous data rate. On-chip zero suppression is inevitable and hit data must be buffered locally during the latency of the first level trigger. Dead-time must be kept at a minimum. It is dominated by contributions coming from the readout. To keep it low an analog readout scheme has been adopted where pixel addresses are analog coded. We present the architecture of the final CMS pixel detector readout chip with special emphasis on the analog readout chain. Measurements of its performance are discussed.

Initial Measurements on Pixel Detector Modules for the ATLAS Upgrades

CERN Document Server

Gallrapp, C; The ATLAS collaboration

2011-01-01

Delicate conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel Detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming Pixel Detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation for silicon planar and 3D pixel sensors, which give a first impression on the charge collection properties of the different sensor technologies, are presented.

Mechanical design and material budget of the CMS barrel pixel detector

Energy Technology Data Exchange (ETDEWEB)

Amsler, C; Boesiger, K; Chiochia, V; Maier, R; Meyer, Hp; Robmann, P; Scherr, S; Schmidt, A; Steiner, S [Universitaet Zuerich, Physik-Institut, Winterthurerstr. 190, CH-8057 Zuerich (Switzerland); Erdmann, W; Gabathuler, K; Horisberger, R; Koenig, S; Kotlinski, D; Meier, B; Streuli, S [Paul Scherrer Institut, CH-5232 Villigen (Switzerland); Rizzi, A [ETH Zuerich, Institute for Particle Physics, CH-8093 Zuerich (Switzerland)], E-mail: Alexander.Schmidt@cern.ch

2009-05-15

The Compact Muon Solenoid experiment at the Large Hadron Collider at CERN includes a silicon pixel detector as its innermost component. Its main task is the precise reconstruction of charged particles close to the primary interaction vertex. This paper gives an overview of the mechanical requirements and design choices for the barrel pixel detector. The distribution of material in the detector as well as its description in the Monte Carlo simulation are discussed in detail.

Mechanical Design and Material Budget of the CMS Barrel Pixel Detector

CERN Document Server

Amsler, C; Chiochia, V; Erdmann, W; Gabathuler, K; Horisberger, R; König, S; Kotlinski, D; Maier, R; Meyer, H; Meier, B; Meyer, Hp; Rizzi, A; Robmann, P; Scherr, S; Schmidt, A; Steiner, S; Erdmann, W; Gabathuler, K; Horisberger, R; König, S; Kotlinski, D; Meier, B; Streuli, S; Rizzi, A

2009-01-01

The Compact Muon Solenoid experiment at the Large Hadron Collider at CERN includes a silicon pixel detector as its innermost component. Its main task is the precise reconstruction of charged particles close to the primary interaction vertex. This paper gives an overview of the mechanical requirements and design choices for the barrel pixel detector. The distribution of material in the detector as well as its description in the Monte Carlo simulation are discussed in detail.

ATLAS rewards two pixel detector suppliers

CERN Multimedia

2007-01-01

Peter Jenni, ATLAS spokesperson, presented the ATLAS supplier award to Herbert Reichl, IZM director, and to Simonetta Di Gioia, from the SELEX company.Two of ATLAS’ suppliers were awarded prizes at a ceremony on Wednesday 13 June attended by representatives of the experiment’s management and of CERN. The prizes went to the Fraunhofer Institut für Zuverlässigkeit und Mikrointegration (IZM) in Berlin and the company SELEX Sistemi Integrati in Rome for the manufacture of modules for the ATLAS pixel detector. SELEX supplied 1500 of the modules for the tracker, while IZM produced a further 1300. The modules, each made up of 46080 channels, form the active part of the ATLAS pixel detector. IZM and SELEX received the awards for the excellent quality of their work: the average number of faulty channels per module was less than 2.10-3. They also stayed within budget and on schedule. The difficulty they faced was designing modules based on electronic components and sensor...

Optical data links for the ATLAS SCT and Pixel Detector

International Nuclear Information System (INIS)

Gregor, I.M.; Weidberg, A.R.; Lee, S.C.; Chu, M.L.; Teng, P.K.

2001-01-01

ATLAS (The ATLAS Technical Proposal, CERN/LHCC 94-33) is one of the large electronic particle detectors at LHC (The LHC Conceptual Design, Report- The Yellow Book, CERN/AC/95-05(LHC)) which will become operational in 2005. It is planned to use radiation tolerant optical links for the data transfer from the SemiConductor Tracker (SCT) (ATLAS Inner Detector Technical Proposal, CERN/LHCC 97-16 and CERN/LHCC 97-17). and Pixel Detector (ATLAS Pixel Detector Technical Proposal, CERN/LHCC 98-13) systems to the acquisition electronics over a distance up to 140m. The overall architecture and the performance of these optical data links are described. One of the three candidate designs for an on-detector Opto-Package is presented

Studies of mono-crystalline CVD diamond pixel detectors

CERN Document Server

Bartz, E; Atramentov, O; Yang, Z; Hall-Wilton, R; Schnetzer, S; Patel, R; Bugg, W; Hebda, P; Halyo, V; Hunt, A; Marlow, D; Steininger, H; Ryjov, V; Hits, D; Spanier, S; Pernicka, M; Johns, W; Doroshenko, J; Hollingsworth, M; Harrop, B; Farrow, C; Stone, R

2011-01-01

The Pixel Luminosity Telescope (PLT) is a dedicated luminosity monitor, presently under construction, for the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC). It measures the particle flux in several three layered pixel diamond detectors that are aligned precisely with respect to each other and the beam direction. At a lower rate it also performs particle track position measurements. The PLTs mono-crystalline CVD diamonds are bump-bonded to the same readout chip used in the silicon pixel system in CMS. Mono-crystalline diamond detectors have many attributes that make them desirable for use in charged particle tracking in radiation hostile environments such as the LHC. In order to further characterize the applicability of diamond technology to charged particle tracking we performed several tests with particle beams that included a measurement of the intrinsic spatial resolution with a high resolution beam telescope. Published by Elsevier B.V.

Studies of mono-crystalline CVD diamond pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Bugg, W. [University of Tennessee, Knoxville (United States); Hollingsworth, M., E-mail: mhollin3@utk.edu [University of Tennessee, Knoxville (United States); Spanier, S.; Yang, Z. [University of Tennessee, Knoxville (United States); Bartz, E.; Doroshenko, J.; Hits, D.; Schnetzer, S.; Stone, R.; Atramentov, O.; Patel, R.; Barker, A. [Rutgers University, Piscataway (United States); Hall-Wilton, R.; Ryjov, V.; Farrow, C. [CERN, Geneva (Switzerland); Pernicka, M.; Steininger, H. [HEPHY, Vienna (Austria); Johns, W. [Vanderbilt University, Nashville (United States); Halyo, V.; Harrop, B. [Princeton University, Princeton (United States); and others

2011-09-11

The Pixel Luminosity Telescope (PLT) is a dedicated luminosity monitor, presently under construction, for the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC). It measures the particle flux in several three layered pixel diamond detectors that are aligned precisely with respect to each other and the beam direction. At a lower rate it also performs particle track position measurements. The PLT's mono-crystalline CVD diamonds are bump-bonded to the same readout chip used in the silicon pixel system in CMS. Mono-crystalline diamond detectors have many attributes that make them desirable for use in charged particle tracking in radiation hostile environments such as the LHC. In order to further characterize the applicability of diamond technology to charged particle tracking we performed several tests with particle beams that included a measurement of the intrinsic spatial resolution with a high resolution beam telescope.

High-speed X-ray imaging pixel array detector for synchrotron bunch isolation.

Science.gov (United States)

Philipp, Hugh T; Tate, Mark W; Purohit, Prafull; Shanks, Katherine S; Weiss, Joel T; Gruner, Sol M

2016-03-01

A wide-dynamic-range imaging X-ray detector designed for recording successive frames at rates up to 10 MHz is described. X-ray imaging with frame rates of up to 6.5 MHz have been experimentally verified. The pixel design allows for up to 8-12 frames to be stored internally at high speed before readout, which occurs at a 1 kHz frame rate. An additional mode of operation allows the integration capacitors to be re-addressed repeatedly before readout which can enhance the signal-to-noise ratio of cyclical processes. This detector, along with modern storage ring sources which provide short (10-100 ps) and intense X-ray pulses at megahertz rates, opens new avenues for the study of rapid structural changes in materials. The detector consists of hybridized modules, each of which is comprised of a 500 µm-thick silicon X-ray sensor solder bump-bonded, pixel by pixel, to an application-specific integrated circuit. The format of each module is 128 × 128 pixels with a pixel pitch of 150 µm. In the prototype detector described here, the three-side buttable modules are tiled in a 3 × 2 array with a full format of 256 × 384 pixels. The characteristics, operation, testing and application of the detector are detailed.

Performance verification of the CMS Phase-1 Upgrade Pixel detector

Science.gov (United States)

Veszpremi, V.

2017-12-01

The CMS tracker consists of two tracking systems utilizing semiconductor technology: the inner pixel and the outer strip detectors. The tracker detectors occupy the volume around the beam interaction region between 3 cm and 110 cm in radius and up to 280 cm along the beam axis. The pixel detector consists of 124 million pixels, corresponding to about 2 m 2 total area. It plays a vital role in the seeding of the track reconstruction algorithms and in the reconstruction of primary interactions and secondary decay vertices. It is surrounded by the strip tracker with 10 million read-out channels, corresponding to 200 m 2 total area. The tracker is operated in a high-occupancy and high-radiation environment established by particle collisions in the LHC . The current strip detector continues to perform very well. The pixel detector that has been used in Run 1 and in the first half of Run 2 was, however, replaced with the so-called Phase-1 Upgrade detector. The new system is better suited to match the increased instantaneous luminosity the LHC would reach before 2023. It was built to operate at an instantaneous luminosity of around 2×1034 cm-2s-1. The detector's new layout has an additional inner layer with respect to the previous one; it allows for more efficient tracking with smaller fake rate at higher event pile-up. The paper focuses on the first results obtained during the commissioning of the new detector. It also includes challenges faced during the first data taking to reach the optimal measurement efficiency. Details will be given on the performance at high occupancy with respect to observables such as data-rate, hit reconstruction efficiency, and resolution.

Performance of thin pixel sensors irradiated up to a fluence of 10{sup 16}n{sub eq}cm{sup -2} and development of a new interconnection technology for the upgrade of the ATLAS pixel system

Energy Technology Data Exchange (ETDEWEB)

Macchiolo, A., E-mail: Anna.Macchiolo@mpp.mpg.de [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Andricek, L. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, D-81739 Muenchen (Germany); Beimforde, M. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Moser, H.-G. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, D-81739 Muenchen (Germany); Nisius, R. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Richter, R.H. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany); Max-Planck-Institut Halbleiterlabor, Otto Hahn Ring 6, D-81739 Muenchen (Germany); Weigell, P. [Max-Planck-Institut fuer Physik, Foehringer Ring 6, D-80805 Muenchen (Germany)

2011-09-11

A new pixel module concept is presented, where thin sensors and a novel vertical integration technique are combined. This R and D activity is carried out in view of the ATLAS pixel detector upgrades. A first set of n-in-p pixel sensors with active thicknesses of 75 and 150{mu}m has been produced using a thinning technique developed at the Max-Planck-Institut Halbleiterlabor (HLL). Charge Collection Efficiency measurements have been performed, yielding a higher CCE than expected from the present radiation damage models. The interconnection of thin n-in-p pixels to the FE-I3 ATLAS electronics is under way, exploiting the Solid Liquid Interdiffusion (SLID) technique developed by the Fraunhofer Institut EMFT. In addition, preliminary studies aimed at Inter-Chip-Vias (ICV) etching into the FE-I3 electronics are reported. ICVs will be used to route the signals vertically through the read-out chip, to newly created pads on the backside. This should serve as a proof of principle for future four-side tileable pixel assemblies, avoiding the cantilever presently needed in the chip for the wire bonding.

Development of a High Dynamic Range Pixel Array Detector for Synchrotrons and XFELs

Science.gov (United States)

Weiss, Joel Todd

Advances in synchrotron radiation light source technology have opened new lines of inquiry in material science, biology, and everything in between. However, x-ray detector capabilities must advance in concert with light source technology to fully realize experimental possibilities. X-ray free electron lasers (XFELs) place particularly large demands on the capabilities of detectors, and developments towards diffraction-limited storage ring sources also necessitate detectors capable of measuring very high flux [1-3]. The detector described herein builds on the Mixed Mode Pixel Array Detector (MM-PAD) framework, developed previously by our group to perform high dynamic range imaging, and the Adaptive Gain Integrating Pixel Detector (AGIPD) developed for the European XFEL by a collaboration between Deustsches Elektronen-Synchrotron (DESY), the Paul-Scherrer-Institute (PSI), the University of Hamburg, and the University of Bonn, led by Heinz Graafsma [4, 5]. The feasibility of combining adaptive gain with charge removal techniques to increase dynamic range in XFEL experiments is assessed by simulating XFEL scatter with a pulsed infrared laser. The strategy is incorporated into pixel prototypes which are evaluated with direct current injection to simulate very high incident x-ray flux. A fully functional 16x16 pixel hybrid integrating x-ray detector featuring several different pixel architectures based on the prototypes was developed. This dissertation describes its operation and characterization. To extend dynamic range, charge is removed from the integration node of the front-end amplifier without interrupting integration. The number of times this process occurs is recorded by a digital counter in the pixel. The parameter limiting full well is thereby shifted from the size of an integration capacitor to the depth of a digital counter. The result is similar to that achieved by counting pixel array detectors, but the integrators presented here are designed to tolerate a

The simulation of charge sharing in semiconductor X-ray pixel detectors

CERN Document Server

Mathieson, K; O'Shea, V; Passmore, M S; Rahman, M; Smith, K M; Watt, J; Whitehill, C

2002-01-01

Two simulation packages were used to model the sharing of charge, due to the scattering and diffusion of carriers, between adjacent pixel elements in semiconductors X-ray detectors. The X-ray interaction and the consequent multiple scattering was modelled with the aid of the Monte Carlo package, MCNP. The resultant deposited charge distribution was then used to create the charge cloud profile in the finite element semiconductor simulation code MEDICI. The analysis of the current pulses induced on pixel electrodes for varying photon energies was performed for a GaAs pixel detector. For a pixel pitch of 25 mu m, the charge lost to a neighbouring pixel was observed to be constant, at 0.6%, through the energies simulated. Ultimately, a fundamental limit on the pixel element size for imaging and spectroscopic devices may be set due to these key physical principles.

Development of a super B-factory monolithic active pixel detector-the Continuous Acquisition Pixel (CAP) prototypes

International Nuclear Information System (INIS)

Varner, G.; Barbero, M.; Bozek, A.; Browder, T.; Fang, F.; Hazumi, M.; Igarashi, A.; Iwaida, S.; Kennedy, J.; Kent, N.; Olsen, S.; Palka, H.; Rosen, M.; Ruckman, L.; Stanic, S.; Trabelsi, K.; Tsuboyama, T.; Uchida, K.

2005-01-01

Over the last few years great progress has been made in the technological development of Monolithic Active Pixel Sensors (MAPS) such that upgrades to existing vertex detectors using this technology are now actively being considered. Future vertex detection at an upgraded KEK-B factory, already the highest luminosity collider in the world, will require a detector technology capable of withstanding the increased track densities and larger radiation exposures. Near the beam pipe the current silicon strip detectors have projected occupancies in excess of 100%. Deep sub-micron MAPS look very promising to address this problem. In the context of an upgrade to the Belle vertex detector, the major obstacles to realizing such a device have been concerns about radiation hardness and readout speed. Two prototypes implemented in the TSMC 0.35 μm process have been developed to address these issues. Denoted the Continuous Acquisition Pixel, or CAP, the two variants of this architecture are distinguished in that CAP2 includes an 8-deep sampling pipeline within each 22.5 μm 2 pixel. Preliminary test results and remaining R and D issues are presented

Semiconductor pixel detectors for digital mammography

International Nuclear Information System (INIS)

Novelli, M.; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S.

2003-01-01

We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown

Semiconductor pixel detectors for digital mammography

Energy Technology Data Exchange (ETDEWEB)

Novelli, M. E-mail: marzia.novelli@pi.infn.it; Amendolia, S.R.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.F.; Delogu, P.; Fantacci, M.E.; Quattrocchi, M.; Rosso, V.; Stefanini, A.; Venturelli, L.; Zucca, S

2003-08-21

We present some results obtained with silicon and gallium arsenide pixel detectors to be applied in the field of digital mammography. Even though GaAs is suitable for medical imaging applications thanks to its atomic number, which allows a very good detection efficiency, it often contains an high concentrations of traps which decrease the charge collection efficiency (CCE). So we have analysed both electrical and spectroscopic performance of different SI GaAs diodes as a function of concentrations of dopants in the substrate, in order to find a material by which we can obtain a CCE allowing the detection of all the photons that interact in the detector. Nevertheless to be able to detect low contrast details, efficiency and CCE are not the only parameters to be optimized; also the stability of the detection system is fundamental. In the past we have worked with Si pixel detectors; even if its atomic number does not allow a good detection efficiency at standard thickness, it has a very high stability. So keeping in mind the need to increase the Silicon detection efficiency we performed simulations to study the behaviour of the electrical potential in order to find a geometry to avoid the risk of electrical breakdown.

Defective pixel map creation based on wavelet analysis in digital radiography detectors

International Nuclear Information System (INIS)

Park, Chun Joo; Lee, Hyoung Koo; Song, William Y.; Achterkirchen, Thorsten Graeve; Kim, Ho Kyung

2011-01-01

The application of digital radiography detectors has attracted increasing attention in both medicine and industry. Since the imaging detectors are fabricated by semiconductor manufacturing process over large areas, defective pixels in the detectors are unavoidable. Moreover, the radiation damage due to the routine use of the detectors progressively increases the density of defective pixels. In this study, we present a method of identifying defective pixels in digital radiography detectors based on wavelet analysis. Artifacts generated due to wavelet transformations have been prevented by an additional local threshold method. The proposed method was applied to a sample digital radiography and the result was promising. The proposed method uses a single pair of dark and white images and does not require them to be corrected in gain-and-offset properties. This method will be helpful for the reliable use of digital radiography detectors through the working lifetime.

Performance Studies of Pixel Hybrid Photon Detectors for the LHCb RICH Counters

CERN Document Server

Aglieri Rinella, G; Piedigrossi, D; Van Lysebetten, A

2004-01-01

The Pixel Hybrid Photon Detector is a vacuum tube with a multi-alkali photo cathode, high voltage cross-focused electron optics and an anode consisting of a silicon pixel detector bump-bonded to a readout CMOS electronic chip fully encapsulated in the device. The Pixel HPD fulfils the requirements of the Ring Imaging Cherenkov counters of the LHCb experiment at LHC. The performances of the Pixel HPD will be discussed with reference to laboratory measurements, Cherenkov light imaging in recent beam tests, image distortions due to a magnetic field.

Pixel readout ASIC for an APD based 2D X-ray hybrid pixel detector with sub-nanosecond resolution

Energy Technology Data Exchange (ETDEWEB)

Thil, Ch., E-mail: christophe.thil@ziti.uni-heidelberg.d [Heidelberg University, Institute of Computer Engineering, B6, 26, 68161 Mannheim (Germany); Baron, A.Q.R. [RIKEN SPring-8 Center, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Fajardo, P. [ESRF, Polygone Scientifique Louis Neel, 6, rue Jules Horowitz, 38000 Grenoble (France); Fischer, P. [Heidelberg University, Institute of Computer Engineering, B6, 26, 68161 Mannheim (Germany); Graafsma, H. [DESY, Notkestrasse 85, 22607 Hamburg (Germany); Rueffer, R. [ESRF, Polygone Scientifique Louis Neel, 6, rue Jules Horowitz, 38000 Grenoble (France)

2011-02-01

The fast response and the short recovery time of avalanche photodiodes (APDs) in linear mode make those devices ideal for direct X-ray detection in applications requiring high time resolution or counting rate. In order to provide position sensitivity, the XNAP project aims at creating a hybrid pixel detector with nanosecond time resolution based on a monolithic APD sensor array with 32 x32 pixels covering about 1 cm{sup 2} active area. The readout is implemented in a pixelated front-end ASIC suited for the readout of such arrays, matched to pixels of 280{mu}mx280{mu}m size. Every single channel features a fast transimpedance amplifier, a discriminator with locally adjustable threshold and two counters with high dynamic range and counting speed able to accumulate X-ray hits with no readout dead time. Additionally, the detector can be operated in list mode by time-stamping every single event with sub-nanosecond resolution. In a first phase of the project, a 4x4 pixel test module is built to validate the conceptual design of the detector. The XNAP project is briefly presented and the performance of the readout ASIC is discussed.

Pixel readout ASIC for an APD based 2D X-ray hybrid pixel detector with sub-nanosecond resolution

International Nuclear Information System (INIS)

Thil, Ch.; Baron, A.Q.R.; Fajardo, P.; Fischer, P.; Graafsma, H.; Rueffer, R.

2011-01-01

The fast response and the short recovery time of avalanche photodiodes (APDs) in linear mode make those devices ideal for direct X-ray detection in applications requiring high time resolution or counting rate. In order to provide position sensitivity, the XNAP project aims at creating a hybrid pixel detector with nanosecond time resolution based on a monolithic APD sensor array with 32 x32 pixels covering about 1 cm 2 active area. The readout is implemented in a pixelated front-end ASIC suited for the readout of such arrays, matched to pixels of 280μmx280μm size. Every single channel features a fast transimpedance amplifier, a discriminator with locally adjustable threshold and two counters with high dynamic range and counting speed able to accumulate X-ray hits with no readout dead time. Additionally, the detector can be operated in list mode by time-stamping every single event with sub-nanosecond resolution. In a first phase of the project, a 4x4 pixel test module is built to validate the conceptual design of the detector. The XNAP project is briefly presented and the performance of the readout ASIC is discussed.

Hexagonal pixel detector with time encoded binary readout

International Nuclear Information System (INIS)

Hoedlmoser, H.; Varner, G.; Cooney, M.

2009-01-01

The University of Hawaii is developing continuous acquisition pixel (CAP) detectors for vertexing applications in lepton colliding experiments such as SuperBelle or ILC. In parallel to the investigation of different technology options such as MAPS or SOI, both analog and binary readout concepts have been tested. First results with a binary readout scheme in which the hit information is time encoded by means of a signal shifting mechanism have recently been published. This paper explains the hit reconstruction for such a binary detector with an emphasis on fake hit reconstruction probabilities in order to evaluate the rate capability in a high background environment such as the planned SuperB factory at KEK. The results show that the binary concept is at least comparable to any analog readout strategy if not better in terms of occupancy. Furthermore, we present a completely new binary readout strategy in which the pixel cells are arranged in a hexagonal grid allowing the use of three independent output directions to reduce reconstruction ambiguities. The new concept uses the same signal shifting mechanism for time encoding, however, in dedicated transfer lines on the periphery of the detector, which enables higher shifting frequencies. Detailed Monte Carlo simulations of full size pixel matrices including hit and BG generation, signal generation, and data reconstruction show that by means of multiple signal transfer lines on the periphery the pixel can be made smaller (higher resolution), the number of output channels and the data volume per triggered event can be reduced dramatically, fake hit reconstruction is lowered to a minimum and the resulting effective occupancies are less than 10 -4 . A prototype detector has been designed in the AMS 0.35μm Opto process and is currently under fabrication.

Development of a Detector Control System for the ATLAS Pixel detector in the HL-LHC

International Nuclear Information System (INIS)

Lehmann, N.; Kersten, S.; Zeitnitz, C.; Karagounis, M.

2016-01-01

The upgrade of the LHC to the HL-LHC requires a new ITk detector. The innermost part of this new tracker is a pixel detector. The University of Wuppertal is developing a new DCS to monitor and control this new pixel detector. The current concept envisions three parallel paths of the DCS. The first path, called security path, is hardwired and provides an interlock system to guarantee the safety of the detector and human beings. The second path is a control path. This path is used to supervise the entire detector. The control path has its own communication lines independent from the regular data readout for reliable operation. The third path is for diagnostics and provides information on demand. It is merged with the regular data readout and provides the highest granularity and most detailed information. To reduce the material budget, a serial power scheme is the baseline for the pixel modules. A new ASIC used in the control path is in development at Wuppertal for this serial power chain. A prototype exists already and a proof of principle was demonstrated. Development and research is ongoing to guarantee the correct operation of the new ASIC in the harsh environment of the HL-LHC. The concept for the new DCS will be presented in this paper. A focus will be made on the development of the DCS chip, used for monitoring and control of pixel modules in a serial power chain.

Performance of the INTPIX6 SOI pixel detector

International Nuclear Information System (INIS)

Arai, Y.; Miyoshi, T.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Turala, M.; Kucewicz, W.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ  m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241 Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e − . The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e − . The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Performance of the INTPIX6 SOI pixel detector

Science.gov (United States)

Arai, Y.; Bugiel, Sz.; Dasgupta, R.; Idzik, M.; Kapusta, P.; Kucewicz, W.; Miyoshi, T.; Turala, M.

2017-01-01

Characterization of the monolithic pixel detector INPTIX6, designed at KEK and fabricated in Lapis 0.2 μ m Fully-Depleted, Low-Leakage Silicon-On-Insulator (SOI) CMOS technology, was performed. The INTPIX6 comprises a large area of 1408 × 896 integrating type squared pixels of 12 micron pitch. In this work the performance and measurement results of the prototypes produced on lower resistivity Czochralski type (CZ-n) and high resistivity floating zone (FZ-n) sensor wafers are presented. Using 241Am radioactive source the noise of INTPIX6 was measured, showing the ENC (Equivalent Noise Charge) of about 70 e-. The resolution calculated from the FWHM of the Iron-55 X-ray peak was about 100 e-. The radiation hardness of the SOI pixel detector was also investigated. The CZ-n type INTPIX6 received a dose of 60 krad and its performance has been continuously monitored during the irradiation.

Design and implementation of an expert system for the detector control systems of the ATLAS pixel detector

International Nuclear Information System (INIS)

Henss, Tobias

2008-12-01

In the framework of this thesis an expert system ''Pixel-Advisor'' for the control system of the pixel detector was designed and implemented. This supports the operational personnel in the diagnosis and removal of possible problems, which are in connection with the detector control system and unburdens the few available DCS experts

Characterization of active CMOS sensors for capacitively coupled pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

2015-07-01

Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

Investigation of thin n-in-p planar pixel modules for the ATLAS upgrade

International Nuclear Information System (INIS)

Savic, N.; Beyer, J.; Rosa, A. La; Macchiolo, A.; Nisius, R.

2016-01-01

In view of the High Luminosity upgrade of the Large Hadron Collider (HL-LHC), planned to start around 2023–2025, the ATLAS experiment will undergo a replacement of the Inner Detector. A higher luminosity will imply higher irradiation levels and hence will demand more radiation hardness especially in the inner layers of the pixel system. The n-in-p silicon technology is a promising candidate to instrument this region, also thanks to its cost-effectiveness because it only requires a single sided processing in contrast to the n-in-n pixel technology presently employed in the LHC experiments. In addition, thin sensors were found to ensure radiation hardness at high fluences. An overview is given of recent results obtained with not irradiated and irradiated n-in-p planar pixel modules. The focus will be on n-in-p planar pixel sensors with an active thickness of 100 and 150 μm recently produced at ADVACAM. To maximize the active area of the sensors, slim and active edges are implemented. The performance of these modules is investigated at beam tests and the results on edge efficiency will be shown.

Development of a cylindrical tracking detector with multichannel scintillation fibers and pixelated photon detector readout

Energy Technology Data Exchange (ETDEWEB)

Akazawa, Y.; Miwa, K.; Honda, R.; Shiozaki, T.; Chiga, N.

2015-07-01

We are developing a cylindrical tracking detector for a Σp scattering experiment in J-PARC with scintillation fibers and the Pixelated Photon Detector (PPD) readout, which is called as cylindrical fiber tracker (CFT), in order to reconstruct trajectories of charged particles emitted inside CFT. CFT works not only as a tracking detector but also a particle identification detector from energy deposits. A prototype CFT consisting of two straight layers and one spiral layer was constructed. About 1100 scintillation fibers with a diameter of 0.75 mm (Kuraray SCSF-78 M) were used. Each fiber signal was read by Multi-Pixel Photon Counter (MPPC, HPK S10362-11-050P, 1×1 mm{sup 2}, 400 pixels) fiber by fiber. MPPCs were handled with Extended Analogue Silicon Photomultipliers Integrated ReadOut Chip (EASIROC) boards, which were developed for the readout of a large number of MPPCs. The energy resolution of one layer was 28% for a 70 MeV proton where the energy deposit in fibers was 0.7 MeV.

Charge loss between contacts of CdZnTe pixel detectors

International Nuclear Information System (INIS)

Bolotnikov, A.E.; Cook, W.R.; Harrison, F.A.; Wong, A.-S.; Schindler, S.M.; Eichelberger, A.C.

1999-01-01

The surface of Cd 1-x Zn x Te (CZT) material has high resistivity but is not a perfect dielectric. Even a small surface conductivity can affect the electric field distribution, and therefore, the charge collection efficiency of a CZT pixel detector. The paper describes studies of this phenomenon for several contact configurations made on a single CZT detector. We have determined the maximum inter-contact separation at which the surface inter-pixel charge loss can be neglected. (author)

Development of pixel detectors for SSC vertex tracking

International Nuclear Information System (INIS)

Kramer, G.; Shapiro, S.L.; Arens, J.F.; Jernigan, J.G.; Skubic, P.

1991-04-01

A description of hybrid PIN diode arrays and a readout architecture for their use as a vertex detector in the SSC environment is presented. Test results obtained with arrays having 256 x 256 pixels, each 30 μm square, are also presented. The development of a custom readout for the SSC will be discussed, which supports a mechanism for time stamping hit pixels, storing their xy coordinates, and storing the analog information within the pixel. The peripheral logic located on the array, permits the selection of those pixels containing interesting data and their coordinates to be selectively read out. This same logic also resolves ambiguous pixel ghost locations and controls the pixel neighbor read out necessary to achieve high spatial resolution. The thermal design of the vertex tracker and the proposed signal processing architecture will also be discussed. 5 refs., 13 figs., 3 tabs

A gas pixel detector for X-ray imaging

International Nuclear Information System (INIS)

Bateman, J.E.; Connolly, J.F.

1991-11-01

A simple, robust form of gas pixel detector is discussed which is based on the use of electronic connector pins as the gain elements. With a rate capability of >10 5 counts/s per pin, an X-ray imaging detector system capable of counting at global rates of the order of 10 10 counts/s is foreseen. (author)

Operational experience of ATLAS SCT and Pixel Detector

CERN Document Server

Kocian, Martin; The ATLAS collaboration

2017-01-01

The ATLAS Inner Detector based on silicon sensors is consisting of a strip detector (SCT) and a pixel detector. It is the crucial component for vertexing and tracking in the ATLAS experiment. With the excellent performance of the LHC well beyond the original specification the silicon tracking detectors are facing substantial challenges in terms of data acquisition, radiation damage to the sensors, and SEUs in the readout ASICs. The approaches on how the detector systems cope with the demands of high luminosity operation while maintaining excellent performance through hardware upgrades, software and firmware algorithms, and operational settings, are presented.

Limits in point to point resolution of MOS based pixels detector arrays

Science.gov (United States)

Fourches, N.; Desforge, D.; Kebbiri, M.; Kumar, V.; Serruys, Y.; Gutierrez, G.; Leprêtre, F.; Jomard, F.

2018-01-01

In high energy physics point-to-point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors, can reach a 5-μm limit, this limit being based on statistical measurements, with a pixel-pitch in the 10 μm range. This paper is devoted to the evaluation of the building blocks for use in pixel arrays enabling accurate tracking of charged particles. Basing us on simulations we will make here a quantitative evaluation of the physical and technological limits in pixel size. Attempts to design small pixels based on SOI technology will be briefly recalled here. A design based on CMOS compatible technologies that allow a reduction of the pixel size below the micrometer is introduced here. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization experiments.

Signal height in silicon pixel detectors irradiated with pions and protons

International Nuclear Information System (INIS)

Rohe, T.; Acosta, J.; Bean, A.; Dambach, S.; Erdmann, W.; Langenegger, U.; Martin, C.; Meier, B.; Radicci, V.; Sibille, J.; Trueb, P.

2010-01-01

Pixel detectors are used in the innermost part of multi-purpose experiments at the Large Hadron Collider (LHC) and are therefore exposed to the highest fluences of ionising radiation, which in this part of the detectors consists mainly of charged pions. The radiation hardness of the detectors has been tested thoroughly up to the fluences expected at the LHC. In case of an LHC upgrade the fluence will be much higher and it is not yet clear up to which radii the present pixel technology can be used. To establish such a limit, pixel sensors of the size of one CMS pixel readout chip (PSI46V2.1) have been bump bonded and irradiated with positive pions up to 6x10 14 n eq /cm 2 at PSI and with protons up to 5x10 15 n eq /cm 2 . The sensors were taken from production wafers of the CMS barrel pixel detector. They use n-type DOFZ material with a resistance of about 3.7kΩcm and an n-side read out. As the performance of silicon sensors is limited by trapping, the response to a Sr-90 source was investigated. The highly energetic beta-particles represent a good approximation to minimum ionising particles. The bias dependence of the signal for a wide range of fluences will be presented.

Gas Pixel Detectors for low energy X-ray polarimetry

International Nuclear Information System (INIS)

Spandre, Gloria

2007-01-01

Gas Pixel Detectors are position-sensitive proportional counters in which a complete integration between the gas amplification structure and the read-out electronics has been reached. Various generation of Application-Specific Integrated Circuit (ASIC) have been designed in deep submicron CMOS technology to realize a monolithic device which is at the same time the charge collecting electrode and the analog amplifying and charge measuring front-end electronics. The experimental response of a detector with 22060 pixels at 80 μm pitch to polarized and un-polarized X-ray radiation is shown and the application of this device for Astronomical X-ray Polarimetry discussed

Initial Measurements On Pixel Detector Modules For The ATLAS Upgrades

CERN Document Server

Gallrapp, C; The ATLAS collaboration

2011-01-01

Sophisticated conditions in terms of peak and integrated luminosity in the Large Hadron Collider (LHC) will raise the ATLAS Pixel detector to its performance limits. Silicon planar, silicon 3D and diamond pixel sensors are three possible sensor technologies which could be implemented in the upcoming pixel detector upgrades of the ATLAS experiment. Measurements of the IV-behavior and measurements with radioactive Americium-241 and Strontium-90 are used to characterize the sensor properties and to understand the interaction between the ATLAS FE-I4 front-end chip and the sensor. Comparisons of results from before and after irradiation, which give a first impression on the charge collection properties of the different sensor technologies are presented.

Radiation Damage Modeling for 3D Pixel Sensors in the ATLAS Detector

CERN Document Server

Wallangen, Veronica; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

Charge loss between contacts of CdZnTe pixel detectors

CERN Document Server

Bolotnikov, A E; Harrison, F A; Wong, A S; Schindler, S M; Eichelberger, A C

1999-01-01

The surface of Cd sub 1 sub - sub x Zn sub x Te (CZT) material has high resistivity but is not a perfect dielectric. Even a small surface conductivity can affect the electric field distribution, and therefore, the charge collection efficiency of a CZT pixel detector. The paper describes studies of this phenomenon for several contact configurations made on a single CZT detector. We have determined the maximum inter-contact separation at which the surface inter-pixel charge loss can be neglected. (author)

Optical readout in a multi-module system test for the ATLAS pixel detector

International Nuclear Information System (INIS)

Flick, Tobias; Becks, Karl-Heinz; Gerlach, Peter; Kersten, Susanne; Maettig, Peter; Nderitu Kirichu, Simon; Reeves, Kendall; Richter, Jennifer; Schultes, Joachim

2006-01-01

The innermost part of the ATLAS experiment at the LHC, CERN, will be a pixel detector, which is presently under construction. The command messages and the readout data of the detector are transmitted over an optical data path. The readout chain consists of many components which are produced at several locations around the world, and must work together in the pixel detector. To verify that these parts are working together as expected a system test has been built up. It consists of detector modules, optoboards, optical fibres, Back of Crate cards, Readout Drivers, and control computers. In this paper, the system test setup and the operation of the readout chain are described. Also, some results of tests using the final pixel detector readout chain are given

Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip

CERN Document Server

Schioppa, E. J.; van Beuzekom, M.; Visser, J.; Koffeman, E.; Heijne, E.; Engel, K. J.; Uher, J.

2015-01-01

A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.

A new generation of small pixel pitch/SWaP cooled infrared detectors

Science.gov (United States)

Espuno, L.; Pacaud, O.; Reibel, Y.; Rubaldo, L.; Kerlain, A.; Péré-Laperne, N.; Dariel, A.; Roumegoux, J.; Brunner, A.; Kessler, A.; Gravrand, O.; Castelein, P.

2015-10-01

Following clear technological trends, the cooled IR detectors market is now in demand for smaller, more efficient and higher performance products. This demand pushes products developments towards constant innovations on detectors, read-out circuits, proximity electronics boards, and coolers. Sofradir was first to show a 10μm focal plane array (FPA) at DSS 2012, and announced the DAPHNIS 10μm product line back in 2014. This pixel pitch is a key enabler for infrared detectors with increased resolution. Sofradir recently achieved outstanding products demonstrations at this pixel pitch, which clearly demonstrate the benefits of adopting 10μm pixel pitch focal plane array-based detectors. Both HD and XGA Daphnis 10μm products also benefit from a global video datapath efficiency improvement by transitioning to digital video interfaces. Moreover, innovative smart pixels functionalities drastically increase product versatility. In addition to this strong push towards a higher pixels density, Sofradir acknowledges the need for smaller and lower power cooled infrared detector. Together with straightforward system interfaces and better overall performances, latest technological advances on SWAP-C (Size, Weight, Power and Cost) Sofradir products enable the advent of a new generation of high performance portable and agile systems (handheld thermal imagers, unmanned aerial vehicles, light gimbals etc...). This paper focuses on those features and performances that can make an actual difference in the field.

A pixel detector for the protein crystallography beamline at the SLS

CERN Document Server

Brönnimann, C; Eikenberry, E F; Fischer, P; Florin, S; Horisberger, R P; Lindner, Manfred; Schmitt, B; Schulze, C

2002-01-01

At the Paul Scherrer Institute a new synchrotron light source is currently under construction, the Swiss Light Source (SLS), which will be operational in summer 2001. Among the first beamlines is a high brightness, micro-focusing protein crystallography beamline. It will be equipped with a pixel detector, which has several features of interest for the next generation of protein crystallography detectors. The point spread function and the effect of charge sharing was measured with a prototype detector in a test experiment at the European Synchrotron Radiation Facility in Grenoble. The concepts of the SLS pixel detector is presented as well as test results from radiation hard prototype chips.

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High- Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for basic...

Development of a counting pixel detector for 'Digitales Roentgen'

International Nuclear Information System (INIS)

Lindner, M.

2001-08-01

The development of a single photon counting X-ray imaging detector for medical applications using hybrid pixel detectors is reported. The electronics development from the first prototype derived from detector development for particle physics experiments (ATLAS) to the imaging chip MPEC (multi picture element counters) for medical applications is described. This chip consists of 32 x 32 pixels of 200 μm x 200 μm size, each containing the complete read out electronics, i.e. an amplifier, two discriminators with adjustable thresholds and two 18-bit linear feedback shift-counters allowing energy windowing for contrast increase. Results on electronics performance are shown as well as measurements with several semiconductor materials (Si, GaAs, CdTe). Important aspects like detection efficiency, sensor homogeneity, linearity and spatial resolution are discussed. (orig.)

Ultra-fast HPM detectors improve NAD(P)H FLIM

Science.gov (United States)

Becker, Wolfgang; Wetzker, Cornelia; Benda, Aleš

2018-02-01

Metabolic imaging by NAD(P)H FLIM requires the decay functions in the individual pixels to be resolved into the decay components of bound and unbound NAD(P)H. Metabolic information is contained in the lifetime and relative amplitudes of the components. The separation of the decay components and the accuracy of the amplitudes and lifetimes improves substantially by using ultra-fast HPM-100-06 and HPM-100-07 hybrid detectors. The IRF width in combination with the Becker & Hickl SPC-150N and SPC-150NX TCSPC modules is less than 20 ps. An IRF this fast does not interfere with the fluorescence decay. The usual deconvolution process in the data analysis then virtually becomes a simple curve fitting, and the parameters of the NAD(P)H decay components are obtained at unprecedented accuracy.

Operational experience with the CMS pixel detector in LHC Run II

CERN Document Server

Karancsi, Janos

2016-01-01

The CMS pixel detector was repaired successfully, calibrated and commissioned for the second run of Large Hadron Collider during the first long shutdown between 2013 and 2015. The replaced pixel modules were calibrated separately and show the expected behavior of an un-irradiated detector. In 2015, the system performed very well with an even improved spatial resolution compared to 2012. During this time, the operational team faced various challenges including the loss of a sector in one half shell which was only partially recovered. In 2016, the detector is expected to withstand instantaneous luminosities beyond the design limits and will need a combined effort of both online and offline teams in order to provide the high quality data that is required to reach the physics goals of CMS. We present the operational experience gained during the second run of the LHC and show the latest performance results of the CMS pixel detector.

Technology development for SOI monolithic pixel detectors

International Nuclear Information System (INIS)

Marczewski, J.; Domanski, K.; Grabiec, P.; Grodner, M.; Jaroszewicz, B.; Kociubinski, A.; Kucharski, K.; Tomaszewski, D.; Caccia, M.; Kucewicz, W.; Niemiec, H.

2006-01-01

A monolithic detector of ionizing radiation has been manufactured using silicon on insulator (SOI) wafers with a high-resistivity substrate. In our paper the integration of a standard 3 μm CMOS technology, originally designed for bulk devices, with fabrication of pixels in the bottom wafer of a SOI substrate is described. Both technological sequences have been merged minimizing thermal budget and providing suitable properties of all the technological layers. The achieved performance proves that fully depleted monolithic active pixel matrix might be a viable option for a wide spectrum of future applications

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

Science.gov (United States)

Wang, Kai; Ou, Hai; Chen, Jun

2015-06-01

Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The "smart" pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients.

Dual-gate photo thin-film transistor: a “smart” pixel for high- resolution and low-dose X-ray imaging

International Nuclear Information System (INIS)

Wang, Kai; Ou, Hai; Chen, Jun

2015-01-01

Since its emergence a decade ago, amorphous silicon flat panel X-ray detector has established itself as a ubiquitous platform for an array of digital radiography modalities. The fundamental building block of a flat panel detector is called a pixel. In all current pixel architectures, sensing, storage, and readout are unanimously kept separate, inevitably compromising resolution by increasing pixel size. To address this issue, we hereby propose a “smart” pixel architecture where the aforementioned three components are combined in a single dual-gate photo thin-film transistor (TFT). In other words, the dual-gate photo TFT itself functions as a sensor, a storage capacitor, and a switch concurrently. Additionally, by harnessing the amplification effect of such a thin-film transistor, we for the first time created a single-transistor active pixel sensor. The proof-of-concept device had a W/L ratio of 250μm/20μm and was fabricated using a simple five-mask photolithography process, where a 130nm transparent ITO was used as the top photo gate, and a 200nm amorphous silicon as the absorbing channel layer. The preliminary results demonstrated that the photocurrent had been increased by four orders of magnitude due to light-induced threshold voltage shift in the sub-threshold region. The device sensitivity could be simply tuned by photo gate bias to specifically target low-level light detection. The dependence of threshold voltage on light illumination indicated that a dynamic range of at least 80dB could be achieved. The 'smart' pixel technology holds tremendous promise for developing high-resolution and low-dose X-ray imaging and may potentially lower the cancer risk imposed by radiation, especially among paediatric patients. (paper)

Survey of the ATLAS Pixel Detector Components

International Nuclear Information System (INIS)

Andreazza, A.; Kostyukhim, V.; Madaras, R.

2008-01-01

This document provides a description of the survey performed on different components of the ATLAS Pixel Detector at different stages of its assembly. During the production of the ATLAS pixel detector great care was put in the geometrical survey of the location of the sensitive area of modules. This had a double purpose: (1) to provide a check of the quality of the assembly procedure and assure tolerances in the geometrical assembly were met; and (2) to provide an initial point for the alignment (the so called 'as-built detector'), better than the ideal geometry. Since direct access to the sensitive area becomes more and more difficult with the progress of the assembly, the survey needed to be performed at different stages: after module loading on the local supports (sectors and staves) and after assembly of the local supports in disks or halfshells. Different techniques were used, including both optical 2D and 3D surveys and mechanical survey. This document summarizes the survey procedures, the analysis done on the collected data and how survey data are stored in case they will need to be accessed in the future

Advanced processing of CdTe pixel radiation detectors

Science.gov (United States)

Gädda, A.; Winkler, A.; Ott, J.; Härkönen, J.; Karadzhinova-Ferrer, A.; Koponen, P.; Luukka, P.; Tikkanen, J.; Vähänen, S.

2017-12-01

We report a fabrication process of pixel detectors made of bulk cadmium telluride (CdTe) crystals. Prior to processing, the quality and defect density in CdTe material was characterized by infrared (IR) spectroscopy. The semiconductor detector and Flip-Chip (FC) interconnection processing was carried out in the clean room premises of Micronova Nanofabrication Centre in Espoo, Finland. The chip scale processes consist of the aluminum oxide (Al2O3) low temperature thermal Atomic Layer Deposition (ALD), titanium tungsten (TiW) metal sputtering depositions and an electroless Nickel growth. CdTe crystals with the size of 10×10×0.5 mm3 were patterned with several photo-lithography techniques. In this study, gold (Au) was chosen as the material for the wettable Under Bump Metalization (UBM) pads. Indium (In) based solder bumps were grown on PSI46dig read out chips (ROC) having 4160 pixels within an area of 1 cm2. CdTe sensor and ROC were hybridized using a low temperature flip-chip (FC) interconnection technique. The In-Au cold weld bonding connections were successfully connecting both elements. After the processing the detector packages were wire bonded into associated read out electronics. The pixel detectors were tested at the premises of Finnish Radiation Safety Authority (STUK). During the measurement campaign, the modules were tested by exposure to a 137Cs source of 1.5 TBq for 8 minutes. We detected at the room temperature a photopeak at 662 keV with about 2 % energy resolution.

Status of the ATLAS Pixel Detector and its performance after three years of operation

CERN Document Server

Favareto, A; The ATLAS collaboration

2012-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is very important for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. The detector performance is excellent: ~96 % of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, and a good alignment allows high quality track resolution

Status of the ATLAS Pixel Detector and its performance after three years of operation

CERN Document Server

Favareto, A; The ATLAS collaboration

2012-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is very important for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. The detector performance is excellent: ~96% of the pixels are operational, noise occupancy and hit efficiency exceed the design specification, and a good alignment allows high quality track resolution.

50 μm pixel pitch wafer-scale CMOS active pixel sensor x-ray detector for digital breast tomosynthesis.

Science.gov (United States)

Zhao, C; Konstantinidis, A C; Zheng, Y; Anaxagoras, T; Speller, R D; Kanicki, J

2015-12-07

Wafer-scale CMOS active pixel sensors (APSs) have been developed recently for x-ray imaging applications. The small pixel pitch and low noise are very promising properties for medical imaging applications such as digital breast tomosynthesis (DBT). In this work, we evaluated experimentally and through modeling the imaging properties of a 50 μm pixel pitch CMOS APS x-ray detector named DynAMITe (Dynamic Range Adjustable for Medical Imaging Technology). A modified cascaded system model was developed for CMOS APS x-ray detectors by taking into account the device nonlinear signal and noise properties. The imaging properties such as modulation transfer function (MTF), noise power spectrum (NPS), and detective quantum efficiency (DQE) were extracted from both measurements and the nonlinear cascaded system analysis. The results show that the DynAMITe x-ray detector achieves a high spatial resolution of 10 mm(-1) and a DQE of around 0.5 at spatial frequencies  CMOS APS x-ray detector, image aquisition geometry and image reconstruction techniques should be considered.

Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

Science.gov (United States)

Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

2018-04-09

Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

Preliminary test of an imaging probe for nuclear medicine using hybrid pixel detectors

International Nuclear Information System (INIS)

Bertolucci, E.; Maiorino, M.; Mettivier, G.; Montesi, M.C.; Russo, P.

2002-01-01

We are investigating the feasibility of an intraoperative imaging probe for lymphoscintigraphy with Tc-99m tracer, for sentinel node radioguided surgery, using the Medipix series of hybrid detectors coupled to a collimator. These detectors are pixelated semiconductor detectors bump-bonded to the Medipix1 photon counting read-out chip (64x64 pixel, 170 μm pitch) or to the Medipix2 chip (256x256 pixel, 55 μm pitch), developed by the European Medipix collaboration. The pixel detector we plan to use in the final version of the probe is a semi-insulating GaAs detector or a 1-2 mm thick CdZnTe detector. For the preliminary tests presented here, we used 300-μm thick silicon detectors, hybridized via bump-bonding to the Medipix1 chip. We used a tungsten parallel-hole collimator (7 mm thick, matrix array of 64x64 100 μm circular holes with 170 μm pitch), and a 22, 60 and 122 keV point-like (1 mm diameter) radioactive sources, placed at various distances from the detector. These tests were conducted in order to investigate the general feasibility of this imaging probe and its resolving power. Measurements show the high resolution but low efficiency performance of the detector-collimator set, which is able to image the 122 keV source with <1 mm FWHM resolution

The upgraded Pixel Detector of the ATLAS experiment for Run-2 at the Large Hadron Collider

CERN Document Server

Giordani, MarioPaolo; The ATLAS collaboration

2016-01-01

Run-2 of the LHC is providing new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130nm technology. In addition the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. The commissioning and performance of the 4-layer Pixel Detector, in particular the IBL, will be presented, using collision data.

Radiationhard components for the control system of a future ATLAS pixel detector

International Nuclear Information System (INIS)

Becker, K; Boek, J; Kersten, S; Kind, P; Maettig, P; Puellen, L; Zeitnitz, C

2011-01-01

The upgrade of the ATLAS experiment for the High Luminosity LHC (HL-LHC) will include a new pixel detector. A completely new detector control system (DCS) for this pixel detector will be required in order to cope with the substantial increase in radiation at the HL-LHC. The DCS has to have a very high reliability and all components installed within the detector volume have to be radiationhard. This will ensure a safe operation of the pixel detector and the experiment. A further design constraint is the minimization of the used material and cables in order to limit the impact on the tracking performance to a minimum. To meet these requirements we propose a DCS network which consists of a DCS chip and a DCS controller. In the following we present the development of the first prototypes for the DCS chip and the DCS controller with a special focus on the communication interface, radiation hardness and robustness against single event upsets.

Versatile, reprogrammable area pixel array detector for time-resolved synchrotron x-ray applications

Energy Technology Data Exchange (ETDEWEB)

Gruner, Sol [Cornell Univ., Ithaca, NY (United States)

2010-05-01

The final technical report for DOE grant DE-SC0004079 is presented. The goal of the grant was to perform research, development and application of novel imaging x-ray detectors so as to effectively utilize the high intensity and brightness of the national synchrotron radiation facilities to enable previously unfeasible time-resolved x-ray research. The report summarizes the development of the resultant imaging x-ray detectors. Two types of detector platforms were developed: The first is a detector platform (called a Mixed-Mode Pixel Array Detector, or MM-PAD) that can image continuously at over a thousand images per second while maintaining high efficiency for wide dynamic range signals ranging from 1 to hundreds of millions of x-rays per pixel per image. Research on an even higher dynamic range variant is also described. The second detector platform (called the Keck Pixel Array Detector) is capable of acquiring a burst of x-ray images at a rate of millions of images per second.

The first bump-bonded pixel detectors on CVD diamond

International Nuclear Information System (INIS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V.G.; Pan, L.S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.

1999-01-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch

The first bump-bonded pixel detectors on CVD diamond

CERN Document Server

Adam, W; Berdermann, E; Bergonzo, P; Bogani, F; Borchi, E; Brambilla, A; Bruzzi, Mara; Colledani, C; Conway, J; Dabrowski, W; Delpierre, P A; Deneuville, A; Dulinski, W; van Eijk, B; Fallou, A; Fizzotti, F; Foulon, F; Fried, M; Gan, K K; Gheeraert, E; Grigoriev, E; Hallewell, G D; Hall-Wilton, R; Han, S; Hartjes, F G; Hrubec, Josef; Husson, D; Kagan, H; Kania, D R; Kaplon, J; Karl, C; Kass, R; Krammer, Manfred; Lo Giudice, A; Lü, R; Manfredi, P F; Manfredotti, C; Marshall, R D; Meier, D; Mishina, M; Oh, A; Palmieri, V G; Pan, L S; Peitz, A; Pernicka, Manfred; Pirollo, S; Polesello, P; Pretzl, Klaus P; Re, V; Riester, J L; Roe, S; Roff, D G; Rudge, A; Schnetzer, S R; Sciortino, S; Speziali, V; Stelzer, H; Steuerer, J; Stone, R; Tapper, R J; Tesarek, R J; Trawick, M L; Trischuk, W; Turchetta, R; Vittone, E; Wagner, A; Walsh, A M; Wedenig, R; Weilhammer, Peter; Zeuner, W; Ziock, H J; Zöller, M; Charles, E; Ciocio, A; Dao, K; Einsweiler, Kevin F; Fasching, D; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Milgrome, O; Palaio, N; Richardson, J; Sinervo, P K; Zizka, G

1999-01-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98565544f the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 mu m was observed, consistent with expectations given the detector pitch. (13 refs).

The first bump-bonded pixel detectors on CVD diamond

Energy Technology Data Exchange (ETDEWEB)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; Eijk, B. van; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K.K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P.F.; Manfredotti, C.; Marshall, R.D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V.G.; Pan, L.S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J.L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R.J.; Tesarek, R.; Trawick, M.; Trischuk, W. E-mail: william@physics.utoronto.ca; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A.M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 {mu}m was observed, consistent with expectations given the detector pitch.

The Layer 1 / Layer 2 readout upgrade for the ATLAS Pixel Detector

CERN Document Server

Mullier, Geoffrey; The ATLAS collaboration

2016-01-01

The Pixel Detector of the ATLAS experiment has shown excellent performance during the whole Run-1 of the Large Hadron Collider (LHC). The increase of instantaneous luminosity foreseen during the LHC Run 2, will lead to an increased detector occupancy that is expected to saturate the readout links of the outermost layers of the pixel detector: Layers 1 and 2. To ensure a smooth data taking under such conditions, the read out system of the recently installed fourth innermost pixel layer, the Insertable B-Layer, was modified to accomodate the needs of the older detector. The Layer 2 upgrade installation took place during the 2015 winter shutdown, with the Layer 1 installation scheduled for 2016. A report of the successful installation, together with the design of novel dedicated optical to electrical converters and the software and firmware updates will be presented.

Exploration of Pixelated detectors for double beta decay searches within the COBRA experiment

Energy Technology Data Exchange (ETDEWEB)

Schwenke, M., E-mail: schwenke@asp.tu-dresden.de [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); Zuber, K.; Janutta, B. [Institut fuer Kern- und Teilchenphysik, Technische Universitaet Dresden, Zellescher Weg 19, 01069 Dresden (Germany); He, Z.; Zeng, F. [Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, Michigan 48109-2104 (United States); Anton, G.; Michel, T.; Durst, J.; Lueck, F.; Gleixner, T. [Erlangen Centre for Astroparticle Physics, Friedrich-Alexander-Universitaet Erlangen-Nuernberg, Erwin-Rommel-Str. 1, 91058 Erlangen (Germany); Goessling, C.; Schulz, O.; Koettig, T. [Technische Universitaet Dortmund, Physik E IV, 44221 Dortmund (Germany); Krawczynski, H.; Martin, J. [Department of Physics, Washington University in St. Louis, Campus Box 1105, One Brookings Drive, St. Louis, MO 63130-4899 (United States); Stekl, I.; Cermak, P. [Institute of Experimental and Applied Physics, Czech Technical University in Prague, Horska 3a/22, 128 00 Prague (Czech Republic)

2011-09-11

The aim of the COBRA experiment is the search for neutrinoless double beta decay events in Cadmium Zinc Telluride (CdZnTe) room temperature semiconductor detectors. The development of pixelated detectors provides the potential for clear event identification and thus major background reduction. The tracking option of a semiconductor is a unique approach in this field. For initial studies, several possible detector systems are considered with a special regard for low background applications: the large volume system Polaris with a pixelated CdZnTe sensor, Timepix detectors with Si and enriched CdTe sensor material and a CdZnTe pixel system developed at the Washington University in St. Louis, USA. For all detector systems first experimental background measurements taken at underground laboratories (Gran Sasso Underground Laboratory in Italy, LNGS and the Niederniveau Messlabor Felsenkeller in Dresden, Germany) and additionally for the Timepix detectors simulation results are presented.

MCC: the Module Controller Chip for the ATLAS Pixel Detector

International Nuclear Information System (INIS)

Beccherle, R.; Darbo, G.; Gagliardi, G.; Gemme, C.; Morettini, P.; Musico, P.; Osculati, B.; Oppizzi, P.; Pratolongo, F.; Ruscino, E.; Schiavi, C.; Vernocchi, F.; Blanquart, L.; Einsweiler, K.; Meddeler, G.; Richardson, J.; Comes, G.; Fischer, P.; Calvet, D.; Boyd, R.; Sicho, P.

2002-01-01

In this article we describe the architecture of the Module Controller Chip for the ATLAS Pixel Detector. The project started in 1997 with the definition of the system specifications. A first fully-working rad-soft prototype was designed in 1998, while a radiation hard version was submitted in 2000. The 1998 version was used to build pixel detector modules. Results from those modules and from the simulated performance in ATLAS are reported. In the article we also describe the hardware/software tools developed to test the MCC performance at the LHC event rate

Simulated and experimental spectroscopic performance of GaAs X-ray pixel detectors

International Nuclear Information System (INIS)

Bisogni, M.G.; Cola, A.; Fantacci, M.E.

2001-01-01

In pixel detectors, the electrode geometry affects the signal shape and therefore the spectroscopic performance of the device. This effect is enhanced in semiconductors where carrier trapping is relevant. In particular, semi insulating (SI) GaAs crystals present an incomplete charge collection due to a high concentration of deep traps in the bulk. In the last few years, SI GaAs pixel detectors have been developed as soft X-ray detectors for medical imaging applications. In this paper, we present a numerical method to evaluate the local charge collection properties of pixel detectors. A bi-dimensional description has been used to represent the detector geometry. According to recent models, the active region of a reverse biased SI GaAs detector is almost neutral. Therefore, the electrostatic potential inside a full active detector has been evaluated using the Laplace equation. A finite difference method with a fixed step orthogonal mesh has been adopted. The photon interaction point has been generated with a Monte Carlo method according to the attenuation length of a monochromatic X-ray beam in GaAs. The number of photogenerated carriers for each interaction has been extracted using a gaussian distribution. The induced signal on the collecting electrode has been calculated according to the Ramo's theorem and the trapping effect has been modeled introducing electron and hole lifetimes. The noise of the charge preamplifier have been also taken into account. A comparison between simulated and experimental X-ray spectra from a 241 Am source acquired with different GaAs pixel detectors has been carried out

First MCM-D modules for the b-physics layer of the ATLAS Pixel Detector

CERN Document Server

Basken, O; Ehrmann, O; Gerlach, P; Grah, C; Gregor, I M; Linder, C; Meuser, S; Richardson, J; Topper, M; Wolf, J

2000-01-01

The innermost layer (b-physics layer) of the ATLAS Pixel Detector will consist of modules based on MCM-D technology. Such a module consists of a sensor tile with an active area of 16.4 mm*60.4 mm, 16 read out ICs, each serving 24* 160 pixel unit cells, a module controller chip (MCC), an optical transceiver and the local signal interconnection and power distribution busses. We show a prototype of such a module with additional test pads on both sides. The outer dimensions of the final module will be 21.4 mm*67.8 mm. The extremely high wiring density, which is necessary to interconnect the read-out chips, was achieved using a thin film copper/photo-BCB process on the pixel array. The bumping of the read out chips was done using electroplating PbSn. All dice are then attached by flip-chip assembly to the sensor diodes and the local busses. The focus of this paper is the description of the first results of such MCM-D-type modules. (11 refs).

Iterative local Chi2 alignment algorithm for the ATLAS Pixel detector

CERN Document Server

Göttfert, Tobias

The existing local chi2 alignment approach for the ATLAS SCT detector was extended to the alignment of the ATLAS Pixel detector. This approach is linear, aligns modules separately, and uses distance of closest approach residuals and iterations. The derivation and underlying concepts of the approach are presented. To show the feasibility of the approach for Pixel modules, a simplified, stand-alone track simulation, together with the alignment algorithm, was developed with the ROOT analysis software package. The Pixel alignment software was integrated into Athena, the ATLAS software framework. First results and the achievable accuracy for this approach with a simulated dataset are presented.

Ultra-thin zirconia films on Zr-alloys

Energy Technology Data Exchange (ETDEWEB)

Choi, Joong Il Jake; Mayr-Schmoelzer, Wernfried; Mittendorfer, Florian; Redinger, Josef; Diebold, Ulrike; Schmid, Michael [Institute of Applied Physics, Vienna University of Technology (Austria); Li, Hao; Rupprechter, Guenther [Institute of Materials Chemistry, Vienna University of Technology (Austria)

2014-07-01

Zirconia ultra-thin films have been prepared by oxidation of Pt{sub 3}Zr(0001) and showed a structure equivalent to (111) of cubic zirconia. Following previous work, we have prepared ultra-thin zirconia by oxidation of a different alloy, Pd{sub 3}Zr(0001), which resulted in a similar structure with a slightly different lattice parameter, 351.2 ±0.4 pm. Unlike the oxide on Pt{sub 3}Zr, where Zr of the oxide binds to Pt in the substrate, here the oxide binds to substrate Zr via oxygen. This causes stronger distortion of the oxide structure, i.e. a stronger buckling of Zr in the oxide. After additional oxidation of ZrO{sub 2}/Pt{sub 3}Zr, a different ultra-thin zirconia phase is observed. A preliminary structure model for this film is based on (113)-oriented cubic zirconia. 3D oxide clusters are also present after growing ultra-thin zirconia films. They occur at the step edges, and the density is higher on Pd{sub 3}Zr. These clusters also appear on terraces after additional oxidation. XPS reveals different core level shifts of the oxide films, bulk, and oxide clusters.

Neural network based cluster creation in the ATLAS silicon pixel detector

CERN Document Server

Selbach, K E; The ATLAS collaboration

2012-01-01

The read-out from individual pixels on planar semi-conductor sensors are grouped into clusters to reconstruct the location where a charged particle passed through the sensor. The resolution given by individual pixel sizes is significantly improved by using the information from the charge sharing between pixels. Such analog cluster creation techniques have been used by the ATLAS experiment for many years to obtain an excellent performance. However, in dense environments, such as those inside high-energy jets, clusters have an increased probability of merging the charge deposited by multiple particles. Recently, a neural network based algorithm which estimates both the cluster position and whether a cluster should be split has been developed for the ATLAS pixel detector. The algorithm significantly reduces ambiguities in the assignment of pixel detector measurement to tracks within jets and improves the position accuracy with respect to standard interpolation techniques by taking into account the 2-dimensional ...

Neural network based cluster creation in the ATLAS silicon Pixel Detector

CERN Document Server

Andreazza, A; The ATLAS collaboration

2013-01-01

The read-out from individual pixels on planar semi-conductor sensors are grouped into clusters to reconstruct the location where a charged particle passed through the sensor. The resolution given by individual pixel sizes is significantly improved by using the information from the charge sharing between pixels. Such analog cluster creation techniques have been used by the ATLAS experiment for many years to obtain an excellent performance. However, in dense environments, such as those inside high-energy jets, clusters have an increased probability of merging the charge deposited by multiple particles. Recently, a neural network based algorithm which estimates both the cluster position and whether a cluster should be split has been developed for the ATLAS Pixel Detector. The algorithm significantly reduces ambiguities in the assignment of pixel detector measurement to tracks within jets and improves the position accuracy with respect to standard interpolation techniques by taking into account the 2-dimensional ...

Modeling Radiation Damage to Pixel Sensors in the ATLAS Detector

CERN Document Server

Rossini, Lorenzo; The ATLAS collaboration

2018-01-01

Silicon pixel detectors are at the core of the current and planned upgrade of the ATLAS detector at the Large Hadron Collider (LHC). As the closest detector component to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the High-Luminosity LHC (HL-LHC), the innermost layers will receive a fluence in excess of 10^15 neq/cm^2 and the HL-HLC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. Simulating radiation damage is critical in order to make accurate predictions for current and future detector performance that will enable searches for new particles and forces as well as precision measurements of Standard Model particles such as the Higgs boson. We present a digitization model that includes radiation damage effects to the ATLAS pixel sensors for the first time and considers both planar and 3D sensor designs. In addition to thoroughly describing the setup, we compare predictions for b...

Design of readout drivers for ATLAS pixel detectors using field programmable gate arrays

CERN Document Server

Sivasubramaniyan, Sriram

Microstrip detectors are an integral patt of high energy physics research . Special protocols are used to transmit the data from these detectors . To readout the data from such detectors specialized instrumentation have to be designed . To achieve this task, creative and innovative high speed algorithms were designed simulated and implemented in Field Programmable gate arrays, using CAD/CAE tools. The simulation results indicated that these algorithms would be able to perform all the required tasks quickly and efficiently. This thesis describes the design of data acquisition system called the Readout Drivers (ROD) . It focuses on the ROD data path for ATLAS Pixel detectors. The data path will be an integrated part of Readout Drivers setup to decode the data from the silicon micro strip detectors and pixel detectors. This research also includes the design of Readout Driver controller. This Module is used to control the operation of the ROD. This module is responsible for the operation of the Pixel decoders bas...

Performance of the Insertable B-Layer for the ATLAS Pixel Detector during Quality Assurance and a Novel Pixel Detector Readout Concept based on PCIe

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00356268; Pernegger, Heinz

2016-07-27

During the first long shutdown of the LHC the Pixel detector has been upgraded with a new 4th innermost layer, the Insertable B-Layer (IBL). The IBL will increase the tracking performance and help with higher than nominal luminosity the LHC will produce. The IBL is made up of 14 staves and in total 20 staves have been produced for the IBL. This thesis presents the results of the final quality tests performed on these staves in an detector-like environment, in order to select the 14 best of the 20 staves for integration onto the detector. The test setup as well as the testing procedure is introduced and typical results of each testing stage are shown and discussed. The overall performance of all staves is presented in regards to: tuning performance, radioactive source measurements, and number of failing pixels. Other measurement, which did not directly impact the selection of staves, but will be important for the operation of the detector or production of a future detector, are included. Based on the experienc...

An EUDET/AIDA Pixel Beam Telescope for Detector Development

CERN Document Server

Rubinskiy, I

2015-01-01

Ahigh resolution(σ< 2 μm) beam telescope based on monolithic active pixel sensors (MAPS) was developed within the EUDET collaboration. EUDET was a coordinated detector R&D programme for the future International Linear Collider providing test beam infrastructure to detector R&D groups. The telescope consists of six sensor planes with a pixel pitch of either 18.4 μm or 10 μmand canbe operated insidea solenoidal magnetic fieldofupto1.2T.Ageneral purpose cooling, positioning, data acquisition (DAQ) and offine data analysis tools are available for the users. The excellent resolution, readout rate andDAQintegration capabilities made the telescopea primary beam tests tool also for several CERN based experiments. In this report the performance of the final telescope is presented. The plans for an even more flexible telescope with three differentpixel technologies(ATLASPixel, Mimosa,Timepix) withinthenew European detector infrastructure project AIDA are presented.

X-Ray Beam Studies of Charge Sharing in Small Pixel, Spectroscopic, CdZnTe Detectors

Science.gov (United States)

Allwork, Christopher; Kitou, Dimitris; Chaudhuri, Sandeep; Sellin, Paul J.; Seller, Paul; Veale, Matthew C.; Tartoni, Nicola; Veeramani, Perumal

2012-08-01

Recent advances in the growth of CdZnTe material have allowed the development of small pixel, spectroscopic, X-ray imaging detectors. These detectors have applications in a diverse range of fields such as medical, security and industrial sectors. As the size of the pixels decreases relative to the detector thickness, the probability that charge is shared between multiple pixels increases due to the non zero width of the charge clouds drifting through the detector. These charge sharing events will result in a degradation of the spectroscopic performance of detectors and must be considered when analyzing the detector response. In this paper charge sharing and charge loss in a 250 μm pitch CdZnTe pixel detector has been investigated using a mono-chromatic X-ray beam at the Diamond Light Source, U.K. Using a 20 μm beam diameter the detector response has been mapped for X-ray energies both above (40 keV) and below (26 keV) the material K-shell absorption energies to study charge sharing and the role of fluorescence X-rays in these events.

Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

CERN Document Server

Giugliarelli, Gilberto; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10^15 neq/cm2 and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This poster presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS Detector.

Modeling Radiation Damage Effects in 3D Pixel Digitization for the ATLAS Detector

CERN Document Server

Wallangen, Veronica; The ATLAS collaboration

2017-01-01

Silicon Pixel detectors are at the core of the current and planned upgrade of the ATLAS detector. As the detector in closest proximity to the interaction point, these detectors will be subjected to a significant amount of radiation over their lifetime: prior to the HL-LHC, the innermost layers will receive a fluence in excess of 10$^{15}$ n$_\\mathrm{eq}$/cm$^2$ and the HL-LHC detector upgrades must cope with an order of magnitude higher fluence integrated over their lifetimes. This work presents the details of a new digitization model that includes radiation damage effects to the 3D Pixel sensors for the ATLAS detector.

Characterisation of novel thin n-in-p planar pixel modules for the ATLAS Inner Tracker upgrade

Science.gov (United States)

Beyer, J.-C.; La Rosa, A.; Macchiolo, A.; Nisius, R.; Savic, N.; Taibah, R.

2018-01-01

In view of the high luminosity phase of the LHC (HL-LHC) to start operation around 2026, a major upgrade of the tracker system for the ATLAS experiment is in preparation. The expected neutron equivalent fluence of up to 2.4×1016 1 MeV neq./cm2 at the innermost layer of the pixel detector poses the most severe challenge. Thanks to their low material budget and high charge collection efficiency after irradiation, modules made of thin planar pixel sensors are promising candidates to instrument these layers. To optimise the sensor layout for the decreased pixel cell size of 50×50 μm2, TCAD device simulations are being performed to investigate the charge collection efficiency before and after irradiation. In addition, sensors of 100-150 μm thickness, interconnected to FE-I4 read-out chips featuring the previous generation pixel cell size of 50×250 μm2, are characterised with testbeams at the CERN-SPS and DESY facilities. The performance of sensors with various designs, irradiated up to a fluence of 1×1016 neq./cm2, is compared in terms of charge collection and hit efficiency. A replacement of the two innermost pixel layers is foreseen during the lifetime of HL-LHC . The replacement will require several months of intervention, during which the remaining detector modules cannot be cooled. They are kept at room temperature, thus inducing an annealing. The performance of irradiated modules will be investigated with testbeam campaigns and the method of accelerated annealing at higher temperatures.

Nanocoatings and ultra-thin films technologies and applications

CERN Document Server

Tiginyanu, Ion

2011-01-01

Gives a comprehensive account of the developments of nanocoatings and ultra-thin films. This book covers the fundamentals, processes of deposition and characterisation of nanocoatings, as well as the applications. It is suitable for the glass and glazing, automotive, electronics, aerospace, construction and biomedical industries in particular.$bCoatings are used for a wide range of applications, from anti-fogging coatings for glass through to corrosion control in the aerospace and automotive industries. Nanocoatings and ultra-thin films provides an up-to-date review of the fundamentals, processes of deposition, characterisation and applications of nanocoatings. Part one covers technologies used in the creation and analysis of thin films, including chapters on current and advanced coating technologies in industry, nanostructured thin films from amphiphilic molecules, chemical and physical vapour deposition methods and methods for analysing nanocoatings and ultra-thin films. Part two focuses on the applications...

X-ray Imaging Using a Hybrid Photon Counting GaAs Pixel Detector

CERN Document Server

Schwarz, C; Göppert, R; Heijne, Erik H M; Ludwig, J; Meddeler, G; Mikulec, B; Pernigotti, E; Rogalla, M; Runge, K; Smith, K M; Snoeys, W; Söldner-Rembold, S; Watt, J

1999-01-01

The performance of hybrid GaAs pixel detectors as X-ray imaging sensors were investigated at room temperature. These hybrids consist of 300 mu-m thick GaAs pixel detectors, flip-chip bonded to a CMOS Single Photon Counting Chip (PCC). This chip consists of a matrix of 64 x 64 identical square pixels (170 mu-m x 170 mu-m) and covers a total area of 1.2 cm**2. The electronics in each cell comprises a preamplifier, a discriminator with a 3-bit threshold adjust and a 15-bit counter. The detector is realized by an array of Schottky diodes processed on semi-insulating LEC-GaAs bulk material. An IV-charcteristic and a detector bias voltage scan showed that the detector can be operated with voltages around 200 V. Images of various objects were taken by using a standard X-ray tube for dental diagnostics. The signal to noise ratio (SNR) was also determined. The applications of these imaging systems range from medical applications like digital mammography or dental X-ray diagnostics to non destructive material testing (...

Evaluation of a hybrid photon counting pixel detector for X-ray polarimetry

International Nuclear Information System (INIS)

Michel, T.; Durst, J.

2008-01-01

It has already been shown in literature that X-ray sensitive CCDs can be used to measure the degree of linear polarization of X-rays using the effect that photoelectrons are emitted with a non-isotropic angular distribution in respect to the orientation of the electric field vector of impinging photons. Up to now hybrid semiconductor pixel detectors like the Timepix-detector have never been used for X-ray polarimetry. The main reason for this is that the pixel pitch is large compared to CCDs which results in a much smaller analyzing power. On the other hand, the active thickness of the sensor layer can be larger than in CCDs leading to an increased efficiency. Therefore hybrid photon counting pixel detectors may be used for imaging and polarimetry at higher photon energies. For irradiation with polarized X-ray photons we were able to measure an asymmetry between vertical and horizontal double hit events in neighboring pixels of the hybrid photon counting Timepix-detector at room temperature. For the specific spectrum used in our experiment an average polarization asymmetry of (0.96±0.02)% was measured. Additionally, the Timepix-detector with its spectroscopic time-over-threshold-mode was used to measure the dependence of the polarization asymmetry on energy deposition in the detector. Polarization asymmetries between 0.2% at 29 keV and 3.4% at 78 keV energy deposition were determined. The results can be reproduced with our EGS4-based Monte-Carlo simulation

Development of 3D-DDTC pixel detectors for the ATLAS upgrade

International Nuclear Information System (INIS)

Dalla Betta, Gian-Franco; Boscardin, Maurizio; Darbo, Giovanni; Gemme, Claudia; La Rosa, Alessandro; Pernegger, Heinz; Piemonte, Claudio; Povoli, Marco; Ronchin, Sabina; Zoboli, Andrea; Zorzi, Nicola

2011-01-01

We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are discussed here.

Development of 3D-DDTC pixel detectors for the ATLAS upgrade

Energy Technology Data Exchange (ETDEWEB)

Dalla Betta, Gian-Franco, E-mail: dallabe@disi.unitn.it [INFN, Sezione di Padova (Gruppo Collegato di Trento), and DISI, Universita di Trento, Via Sommarive 14, 38123 Povo di Trento (Italy); Boscardin, Maurizio [Fondazione Bruno Kessler (FBK-irst), Via Sommarive 18, 38123 Povo di Trento (Italy); Darbo, Giovanni; Gemme, Claudia [INFN, Sezione di Genova, Via Dodecaneso 33, 16146 Genova (Italy); La Rosa, Alessandro; Pernegger, Heinz [CERN-PH, CH-1211 Geneve 23 (Switzerland); Piemonte, Claudio [Fondazione Bruno Kessler (FBK-irst), Via Sommarive 18, 38123 Povo di Trento (Italy); Povoli, Marco [INFN, Sezione di Padova (Gruppo Collegato di Trento), and DISI, Universita di Trento, Via Sommarive 14, 38123 Povo di Trento (Italy); Ronchin, Sabina [Fondazione Bruno Kessler (FBK-irst), Via Sommarive 18, 38123 Povo di Trento (Italy); Zoboli, Andrea [INFN, Sezione di Padova (Gruppo Collegato di Trento), and DISI, Universita di Trento, Via Sommarive 14, 38123 Povo di Trento (Italy); Zorzi, Nicola [Fondazione Bruno Kessler (FBK-irst), Via Sommarive 18, 38123 Povo di Trento (Italy)

2011-04-21

We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are discussed here.

Development of 3D-DDTC pixel detectors for the ATLAS upgrade

CERN Document Server

Betta, G -F Dalla; Darbo, G; Gemme, C; La Rosa, A; Pernegger, H; Piemonte, C; Povoli, M; Ronchin, S; Zoboli, A; Zorzi, N

2011-01-01

We report on the development of n-on-p, 3D Double-Side Double Type Column (3D-DDTC) pixel detectors fabricated at FBK-irst (Trento, Italy) and oriented to the ATLAS upgrade. The considered fabrication technology is simpler than that required for full 3D detectors with active edge, but the detector efficiency and radiation hardness critically depend on the columnar electrode overlap and should be carefully evaluated. The first assemblies of these sensors (featuring 2, 3, or 4 columns per pixel) with the ATLAS FEI3 read-out chip have been tested in laboratory. Selected results from the electrical and functional characterization with radioactive sources are here discussed.

The upgraded Pixel Detector of the ATLAS Experiment for Run 2 at the Large Hadron Collider

Energy Technology Data Exchange (ETDEWEB)

Backhaus, M., E-mail: malte.backhaus@cern.ch

2016-09-21

During Run 1 of the Large Hadron Collider (LHC), the ATLAS Pixel Detector has shown excellent performance. The ATLAS collaboration took advantage of the first long shutdown of the LHC during 2013 and 2014 and extracted the ATLAS Pixel Detector from the experiment, brought it to surface and maintained the services. This included the installation of new service quarter panels, the repair of cables, and the installation of the new Diamond Beam Monitor (DBM). Additionally, a completely new innermost pixel detector layer, the Insertable B-Layer (IBL), was constructed and installed in May 2014 between a new smaller beam pipe and the existing Pixel Detector. With a radius of 3.3 cm the IBL is located extremely close to the interaction point. Therefore, a new readout chip and two new sensor technologies (planar and 3D) are used in the IBL. In order to achieve best possible physics performance the material budget was improved with respect to the existing Pixel Detector. This is realized using lightweight staves for mechanical support and a CO{sub 2} based cooling system. This paper describes the improvements achieved during the maintenance of the existing Pixel Detector as well as the performance of the IBL during the construction and commissioning phase. Additionally, first results obtained during the LHC Run 2 demonstrating the distinguished tracking performance of the new Four Layer ATLAS Pixel Detector are presented.

Track parameter resolution study of a pixel only detector for LHC geometry and future high rate experiments

Energy Technology Data Exchange (ETDEWEB)

Blago, Michele Piero; Kar, Tamasi Rameshchandra; Schoening, Andre [Physikalisches Institut, Universitaet Heidelberg (Germany)

2016-07-01

Recent progress in pixel detector technology, for example using High Voltage-Monolithic Pixel Sensors (HV-MAPS), makes it feasible to construct an all-silicon pixel detector for large scale particle experiments like ATLAS and CMS or other future collider experiments. Preliminary studies have shown that nine layers of pixel sensors are sufficient to reliably reconstruct particle trajectories. The performance of such an all-pixel detector is studied based on a full GEANT simulation for high luminosity conditions at the upgraded LHC. Furthermore, the ability of an all-pixel detector to form trigger decisions using a special triplet pixel layer design is studied. Such a design could be used to reconstruct all tracks originating from the proton-proton interaction at the first hardware level at 40 MHz collision frequency.

Detection of secondary electrons with pixelated hybrid semiconductor detectors

International Nuclear Information System (INIS)

Gebert, Ulrike Sonja

2011-01-01

Within the scope of this thesis, secondary electrons were detected with a pixelated semiconductor detector named Timepix. The Timepix detector consists of electronics and a sensor made from a semiconductor material. The connection of sensor and electronics is done for each pixel individually using bump bonds. Electrons with energies above 3 keV can be detected with the sensor. One electron produces a certain amount of electron-hole pairs according to its energy. The charge then drifts along an electric field to the pixel electronics, where it induces an electric signal. Even without a sensor it is possible to detect an electric signal from approximately 1000 electrons directly in the pixel electronics. Two different detector systems to detect secondary electrons using the Timepix detector were investigated during this thesis. First of all, a hybrid photon detector (HPD) was used to detect single photoelectrons. The HPD consists of a vacuum vessel with an entrance window and a cesium iodine photocathode at the inner surface of the window. Photoelectrons are released from the photocathode by incident light and are accelerated in an electric field towards the Timepix detector, where the point of interaction and the arrival time of the electron is determined. With a proximity focusing setup, a time resolution of 12 ns (with an acceleration voltage of 20 kV between photocathode and Timepix detector) was obtained. The HPD examined in this thesis showed a strong dependence of the dark rate form the acceleration voltage and the pressure in the vacuum vessel. At a pressure of few 10 -5 mbar and an acceleration voltage of 20 kV, the dark rate was about 800 Hz per mm 2 area of the read out photocathode. One possibility to reduce the dark rate is to identify ion feedback events. With a slightly modified setup it was possible to reduce the dark rate to 0.5 Hz/mm 2 . To achieve this, a new photocathode was mounted in a shorter distance to the detector. The measurements where

The upgraded Pixel detector and the commissioning of the Inner Detector tracking of the ATLAS experiment for Run-2 at the Large Hadron Collider

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00019188; The ATLAS collaboration

2016-01-01

Run-2 of the Large Hadron Collider (LHC) will provide new challenges to track and vertex reconstruction with higher energies, denser jets and higher rates. Therefore the ATLAS experiment has constructed the first 4-layer Pixel detector in HEP, installing a new Pixel layer, also called Insertable B-Layer (IBL). The IBL is a fourth layer of pixel detectors, and has been installed in May 2014 at a radius of 3.3 cm between the existing Pixel Detector and a new smaller radius beam-pipe. The new detector, built to cope with the high radiation and expected occupancy, is the first large scale application of 3D detectors and CMOS 130~nm technology. In addition, the Pixel detector was refurbished with a new service quarter panel to recover about 3% of defective modules lost during Run-1 and a new optical readout system to readout the data at higher speed while reducing the occupancy when running with increased luminosity. Complementing detector improvements, many improvements to Inner Detector track and vertex reconstr...

Readout chip for the CMS pixel detector upgrade

Energy Technology Data Exchange (ETDEWEB)

Rossini, Marco, E-mail: marco.rossini@phys.ethz.ch

2014-11-21

For the CMS experiment a new pixel detector is planned for installation during the extended shutdown in winter 2016/2017. Among the changes of the detector modified front end electronics will be used for higher efficiency at peak luminosity of the LHC and faster readout. The first prototype versions of the new readout chip have been designed and produced. The results of qualification and calibration for the new chip are presented in this paper.

Results from the Commissioning of the ATLAS Pixel Detector

CERN Document Server

Ibragimov, I

2008-01-01

The ATLAS pixel detector is the innermost tracking detector of the ATLAS experiment at the Large Hadron Collider (LHC) at CERN. It has a total active area of 1.7 m2 of silicon read out by approximately 80 million electronic channels, which will detect particle tracks and decay vertices with a very high precision. After more than 10 years of development and construction it is the first time ever the whole detector has been operated together. The paper will illustrate the detector performance and give first results from the combined ATLAS cosmics runs.

3D simulations and modeling of new low capacitance silicon pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Xiong, Bo; Li, Yu Yun [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105 (China); Li, Zheng, E-mail: zhengli58@gmail.com [School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105 (China); Center for Semiconductor Particle and photon Imaging Detector Development and Fabrication, Xiangtan University, Xiangtan 411105 (China)

2016-09-21

With signal to noise ratio (S/N) being a key parameter of a high performance detector, reducing the detector noise has been one of the main tasks in detector development. A new low capacitance silicon pixel detector is proposed, which is based on a new electrode geometry with reduced effective electrode area while keeping the sensitive volume unchanged. Detector electrical characteristics including electrostatic potential, electric field, full depletion voltage, and capacitance have been simulated in detail using a 3D TCAD tool. From these simulations and calculations, we confirm that the new detector structure has a much reduced capacitance (by a factor of 3) as compared to the traditional pixel detectors with the same sensitive volume. This reduction in detector capacitance can certainly improve the detector signal to noise ratio. However, the full depletion voltage for the new structure is larger than that of the traditional one due to the small electrode effect.

Leakage current measurements on pixelated CdZnTe detectors

NARCIS (Netherlands)

Dirks, B.; Blondel, C.; Daly, F.; Gevin, O.; Limousin, O.; Lugiez, F.

2006-01-01

In the field of the R&D of a new generation hard X-ray cameras for space applications we focus on the use of pixelated CdTe or CdZnTe semiconductor detectors. They are covered with 64 (0.9×0.9 mm2) or 256 (0.5×0.5 mm2) pixels, surrounded by a guard ring and operate in the energy ranging from several

System test and noise performance studies at the ATLAS pixel detector

International Nuclear Information System (INIS)

Weingarten, J.

2007-09-01

The central component of the ATLAS Inner Tracker is the pixel detector. It consists of three barrel layers and three disk-layers in the end-caps in both forward directions. The innermost barrel layer is mounted at a distance of about 5 cm from the interaction region. With its very high granularity, truly two-dimensional hit information, and fast readout it is well suited to cope with the high densities of charged tracks, expected this close to the interaction region. The huge number of readout channels necessitates a very complex services infrastructure for powering, readout and safety. After a description of the pixel detector and its services infrastructure, key results from the system test at CERN are presented. Furthermore the noise performance of the pixel detector, crucial for high tracking and vertexing efficiencies, is studied. Measurements of the single-channel random noise are presented together with studies of common mode noise and measurements of the noise occupancy using a random trigger generator. (orig.)

System test and noise performance studies at the ATLAS pixel detector

Energy Technology Data Exchange (ETDEWEB)

Weingarten, J.

2007-09-15

The central component of the ATLAS Inner Tracker is the pixel detector. It consists of three barrel layers and three disk-layers in the end-caps in both forward directions. The innermost barrel layer is mounted at a distance of about 5 cm from the interaction region. With its very high granularity, truly two-dimensional hit information, and fast readout it is well suited to cope with the high densities of charged tracks, expected this close to the interaction region. The huge number of readout channels necessitates a very complex services infrastructure for powering, readout and safety. After a description of the pixel detector and its services infrastructure, key results from the system test at CERN are presented. Furthermore the noise performance of the pixel detector, crucial for high tracking and vertexing efficiencies, is studied. Measurements of the single-channel random noise are presented together with studies of common mode noise and measurements of the noise occupancy using a random trigger generator. (orig.)

Feasibility of Ultra-Thin Fiber-Optic Dosimeters for Radiotherapy Dosimetry.

Science.gov (United States)

Lee, Bongsoo; Kwon, Guwon; Shin, Sang Hun; Kim, Jaeseok; Yoo, Wook Jae; Ji, Young Hoon; Jang, Kyoung Won

2015-11-17

In this study, prototype ultra-thin fiber-optic dosimeters were fabricated using organic scintillators, wavelength shifting fibers, and plastic optical fibers. The sensor probes of the ultra-thin fiber-optic dosimeters consisted of very thin organic scintillators with thicknesses of 100, 150 and 200 μm. These types of sensors cannot only be used to measure skin or surface doses but also provide depth dose measurements with high spatial resolution. With the ultra-thin fiber-optic dosimeters, surface doses for gamma rays generated from a Co-60 therapy machine were measured. Additionally, percentage depth doses in the build-up regions were obtained by using the ultra-thin fiber-optic dosimeters, and the results were compared with those of external beam therapy films and a conventional fiber-optic dosimeter.

Pixel Detector Developments for Tracker Upgrades of the High Luminosity LHC

CERN Document Server

Meschini, Marco; Dalla Betta, G. F; Dinardo, Mauro; Giacomini, G; Menasce, Dario; Mendicino, R; Messineo, Alberto; Moroni, Luigi; Ronchin, S; Sultan, D.M.S; Uplegger, Lorenzo; Viliani, Lorenzo; Zoi, Irene; Zuolo, Davide

2017-01-01

and 3D devices. The results on the 3D pixel sensors before irradiation are very satisfactory and % make us confident support the conclusion that columnar devices are % 3D devices very good candidates for the inner layers of the upgrade pixel detectors.

The MAPS-based vertex detector for the STAR experiment: Lessons learned and performance

Energy Technology Data Exchange (ETDEWEB)

Contin, Giacomo, E-mail: gcontin@lbl.gov

2016-09-21

The PiXeL detector (PXL) of the STAR experiment at RHIC is the first application of the state-of-the-art thin Monolithic Active Pixel Sensors (MAPS) technology in a collider environment. The PXL, together with the Intermediate Silicon Tracker (IST) and the Silicon Strip Detector (SSD), form the Heavy Flavor Tracker (HFT), which has been designed to improve the vertex resolution and extend the STAR measurement capabilities in the heavy flavor domain, providing a clean probe for studying the Quark–Gluon Plasma. The two PXL layers are placed at a radius of 2.8 and 8 cm from the beam line, respectively, and is based on ultra-thin high resolution MAPS sensors. The sensor features 20.7 μm pixel pitch, 185.6 μs readout time and 170 mW/cm{sup 2} power dissipation. The detector is air-cooled, allowing a global material budget of 0.4% radiation length on the innermost layer. A novel mechanical approach to detector insertion allows for fast installation and integration of the pixel sub detector. The HFT took data in Au+Au collisions at 200 GeV during the 2014 RHIC run. Modified during the RHIC shutdown to improve its reliability, material budget, and tracking capabilities, the HFT took data in p+p and p+Au collisions at √s{sub NN}=200 GeV in the 2015 RHIC run. In this paper we present detector specifications, experience from the construction and operations, and lessons learned. We also show preliminary results from 2014 Au+Au data analyses, demonstrating the capabilities of charm reconstruction with the HFT. - Highlights: • First MAPS-based vertex detector in a collider experiment. • Achieved low material budget of 0.39% of radiation length per detector layer. • Track pointing resolution to the primary vertex better than 10⊕24 GeV/p×c μm. • Gain in significance for the topological reconstruction of the D{sup 0}−>K+π decay in STAR. • Observed latch-up induced damage of MAPS sensors.

Characterization of a large-format, fine-pitch CdZnTe pixel detector for the HEFT balloon-Borne experiment

OpenAIRE

Chen, C. M. Hubert; Cook, Walter R.; Harrison, Fiona A.; Lin, Jiao Y. Y.

2004-01-01

We have developed a large-format CdZnTe pixel detector with custom, low-noise ASIC readout, for astrophysical applications. In particular, this detector is targeted for use in the High-Energy Focusing Telescope (HEFT), a balloon-borne experiment with focusing optics for 20-70 keV. The detector is a 24 X 44 pixel array of 498-µm pitch. As a focal plane detector, uniformity from pixel to pixel is very desirable. In this paper, we present the characterization of some detector properties for the ...

Status of the ATLAS Pixel Detector at the LHC and its performance after three years of operation

CERN Document Server

Andreazza, A; The ATLAS collaboration

2012-01-01

The ATLAS Pixel Detector is the innermost detector of the ATLAS experiment at the Large Hadron Collider at CERN, providing high-resolution measurements of charged particle tracks in the high radiation environment close to the collision region. This capability is vital for the identification and measurement of proper decay times of long-lived particles such as b-hadrons, and thus vital for the ATLAS physics program. The detector provides hermetic coverage with three cylindrical layers and three layers of forward and backward pixel detectors. It consists of approximately 80 million pixels that are individually read out via chips bump-bonded to 1744 n-in-n silicon substrates. In this talk, results from the successful operation of the Pixel Detector at the LHC and its status after three years of operation will be presented, including monitoring, calibration procedures, timing optimization and detector performance. The detector performance is excellent: ~96 % of the pixels are operational, noise occupancy and hit ...

Testing and Integration of the Service Cylinders for the CMS Phase 1 pixel detector

CERN Document Server

Ngadiuba, Jennifer

2016-01-01

The present 3-layer CMS pixel detector will be replaced with a new 4-layer pixel system, referred to as Phase~1 upgrade, during the LHC extended technical stop in winter 2016/2017. The upgraded detector will allow to maintain the excellent tracking performance of CMS at the upcoming higher luminosity conditions at the LHC. The addition of an extra layer, closer to the beam pipe, demands a complete redesign of its services. The barrel pixel detector is attached to four half cylinders which carry the services along the beam pipe, accommodate the cooling lines and house the electronics for detector readout and control. The service cylinders are a complex system in design as well as in production due to the large number of channels and tight space requirements. In this document we present the design of the system and discuss the construction and testing of the service cylinders for the barrel pixel detector. Furthermore, we present results of the testing and calibrations carried out with a set of new digital dete...

Operating characteristics of radiation-hardened silicon pixel detectors for the CMS experiment

CERN Document Server

Hyosung, Cho

2002-01-01

The Compact Muon Solenoid (CMS) experiment at the CERN Large Hadron Collider (LHC) will have forward silicon pixel detectors as its innermost tracking device. The pixel devices will be exposed to the harsh radiation environment of the LHC. Prototype silicon pixel detectors have been designed to meet the specification of the CMS experiment. No guard ring is required on the n/sup +/ side, and guard rings on the p/sup +/ side are always kept active before and after type inversion. The whole n/sup +/ side is grounded and connected to readout chips, which greatly simplifies detector assembling and improves the stability of bump-bonded readout chips on the n/sup +/ side. Operating characteristics such as the leakage current, the full depletion voltage, and the potential distributions over guard rings were tested using standard techniques. The tests are discussed in this paper. (9 refs).

A review of advances in pixel detectors for experiments with high rate and radiation

Science.gov (United States)

Garcia-Sciveres, Maurice; Wermes, Norbert

2018-06-01

The large Hadron collider (LHC) experiments ATLAS and CMS have established hybrid pixel detectors as the instrument of choice for particle tracking and vertexing in high rate and radiation environments, as they operate close to the LHC interaction points. With the high luminosity-LHC upgrade now in sight, for which the tracking detectors will be completely replaced, new generations of pixel detectors are being devised. They have to address enormous challenges in terms of data throughput and radiation levels, ionizing and non-ionizing, that harm the sensing and readout parts of pixel detectors alike. Advances in microelectronics and microprocessing technologies now enable large scale detector designs with unprecedented performance in measurement precision (space and time), radiation hard sensors and readout chips, hybridization techniques, lightweight supports, and fully monolithic approaches to meet these challenges. This paper reviews the world-wide effort on these developments.

The high dynamic range pixel array detector (HDR-PAD): Concept and design

Energy Technology Data Exchange (ETDEWEB)

Shanks, Katherine S.; Philipp, Hugh T.; Weiss, Joel T.; Becker, Julian; Tate, Mark W. [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Gruner, Sol M., E-mail: smg26@cornell.edu [Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY 14853 (United States); Cornell High Energy Synchrotron Source (CHESS), Cornell University, Ithaca, NY 14853 (United States)

2016-07-27

Experiments at storage ring light sources as well as at next-generation light sources increasingly require detectors capable of high dynamic range operation, combining low-noise detection of single photons with large pixel well depth. XFEL sources in particular provide pulse intensities sufficiently high that a purely photon-counting approach is impractical. The High Dynamic Range Pixel Array Detector (HDR-PAD) project aims to provide a dynamic range extending from single-photon sensitivity to 10{sup 6} photons/pixel in a single XFEL pulse while maintaining the ability to tolerate a sustained flux of 10{sup 11} ph/s/pixel at a storage ring source. Achieving these goals involves the development of fast pixel front-end electronics as well as, in the XFEL case, leveraging the delayed charge collection due to plasma effects in the sensor. A first prototype of essential electronic components of the HDR-PAD readout ASIC, exploring different options for the pixel front-end, has been fabricated. Here, the HDR-PAD concept and preliminary design will be described.

ATLAS-TPX: a two-layer pixel detector setup for neutron detection and radiation field characterization

International Nuclear Information System (INIS)

Bergmann, B.; Caicedo, I.; Pospisil, S.; Vykydal, Z.; Leroy, C.

2016-01-01

A two-layer pixel detector setup (ATLAS-TPX), designed for thermal and fast neutron detection and radiation field characterization is presented. It consists of two segmented silicon detectors (256 × 256 pixels, pixel pitch 55 μm, thicknesses 300 μm and 500 μm) facing each other. To enhance the neutron detection efficiency a set of converter layers is inserted in between these detectors. The pixelation and the two-layer design allow a discrimination of neutrons against γs by pattern recognition and against charged particles by using the coincidence and anticoincidence information. The neutron conversion and detection efficiencies are measured in a thermal neutron field and fast neutron fields with energies up to 600 MeV. A Geant4 simulation model is presented, which is validated against the measured detector responses. The reliability of the coincidence and anticoincidence technique is demonstrated and possible applications of the detector setup are briefly outlined.

New pixelized Micromegas detector with low discharge rate for the COMPASS experiment

CERN Document Server

Neyret, D.; Anfreville, M.; Bedfer, Y.; Burtin, E.; Coquelet, C.; d'Hose, N.; Desforge, D.; Giganon, A.; Jourde, D.; Kunne, F.; Magnon, A.; Makke, N.; Marchand, C.; Paul, B.; Platchkov, S.; Thibaud, F.; Usseglio, M.; Vandenbroucke, M.

2012-01-01

New Micromegas (Micro-mesh gaseous detectors) are being developed in view of the future physics projects planned by the COMPASS collaboration at CERN. Several major upgrades compared to present detectors are being studied: detectors standing five times higher luminosity with hadron beams, detection of beam particles (flux up to a few hundred of kHz/mm^{2}, 10 times larger than for the present Micromegas detectors) with pixelized read-out in the central part, light and integrated electronics, and improved robustness. Two solutions of reduction of discharge impact have been studied, with Micromegas detectors using resistive layers and using an additional GEM foil. Performance of such detectors has also been measured. A large size prototypes with nominal active area and pixelized read-out has been produced and installed at COMPASS in 2010. In 2011 prototypes featuring an additional GEM foil, as well as an resistive prototype, are installed at COMPASS and preliminary results from those detectors presented very go...

Fabrication of a high-density MCM-D for a pixel detector system using a BCB/Cu technology

CERN Document Server

Topper, M; Engelmann, G; Fehlberg, S; Gerlach, P; Wolf, J; Ehrmann, O; Becks, K H; Reichl, H

1999-01-01

The MCM-D which is described here is a prototype for a pixel detector system for the planned Large Hadron Collider (LHC) at CERN, Geneva. The project is within the ATLAS experiment. The module consists of a sensor tile with an active area of 16.4 mm*60.4 mm, 16 readout chips, each serving 24*160 pixel unit cells, a module controller chip, an optical transceiver and the local signal interconnection and power distribution buses. The extremely high wiring density which is necessary to interconnect the readout chips was achieved using a thin film copper/photo-BCB process above the pixel array. The bumping of the readout chips was done by PbSn electroplating. All dice are then attached by flip-chip assembly to the sensor diodes and the local buses. The focus of this paper is a detailed description of the technologies for the fabrication of this advanced MCM-D. (10 refs).

CdTe hybrid pixel detector for imaging with thermal neutrons

Czech Academy of Sciences Publication Activity Database

Jakůbek, J.; Mettivier, G.; Montesi, M.C.; Pospíšil, S.; Russo, P.; Vacík, Jiří

2006-01-01

Roč. 563, č. 1 (2006), s. 238-241 ISSN 0168-9002 R&D Pro jects: GA MŠk 1P04LA211 Institutional research plan: CEZ:AV0Z10480505 Keywords : neutronography * pixel detector * semiconductor detector Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.185, year: 2006

Studies on MCM-D pixel-detector-modules

CERN Document Server

Flick, T; Gerlach, P; Grah, C; Mättig, P; Rohe, T

2003-01-01

In the context of the development of the ATLAS-pixel-detector, a technology for building up the high density interconnects has been studied, the MCM-D (multichip module deposited) technology. Results of building up first assemblies have been reported. MCM-D technology allows to build up assemblies with uniformly segmented sensors. Especially the use of 'equal-sized(-bricked)' sensor geometry has been studied.

The CMS Pixel Detector Upgrade and R\\&D for the High Luminosity LHC

CERN Document Server

Viliani, Lorenzo

2017-01-01

The High Luminosity Large Hadron Collider (HL-LHC) at CERN is expected to collide protons at a centre-of-mass energy of 14\\,TeV and to reach an unprecedented peak instantaneous luminosity of $5 \\times 10^{34}\\,{\\rm cm}^{-2} {\\rm s}^{-1}$ with an average number of pileup events of 140. This will allow the ATLAS and CMS experiments to collect integrated luminosities of up to $3000\\,{\\rm fb}^{-1}$ during the project lifetime. To cope with this extreme scenario the CMS detector will be substantially upgraded before starting the HL-LHC, a plan known as CMS Phase-2 Upgrade. In the upgrade the entire CMS silicon pixel detector will be replaced and the new detector will feature increased radiation hardness, higher granularity and capability to handle higher data rate and longer trigger latency. In this report the Phase-2 Upgrade of the CMS silicon pixel detector will be reviewed, focusing on the features of the detector layout and on the development of new pixel devices.

Development of a serial powering scheme and a versatile characterization system for the ATLAS pixel detector upgrade

Energy Technology Data Exchange (ETDEWEB)

Filimonov, Viacheslav

2017-08-15

In order to increase the probability of new discoveries the LHC will be upgraded to the HL-LHC. The upgrade of the ATLAS detector is an essential part of this program. The entire ATLAS tracking system will be replaced by an all-silicon detector called Inner Tracker (ITk) which should be able to withstand the increased luminosity of 5 x 10{sup 34} cm{sup -2}s{sup -1}. The work presented in this thesis is focused on the ATLAS ITk pixel detector upgrade. Advanced silicon pixel detectors will be an essential part of the ITk pixel detector where they will be used for tracking and vertexing. Characterization of the pixel detectors is one of the required tasks for a successful ATLAS tracker upgrade. Therefore, the work presented in this thesis includes the development of a versatile and modular test system for advanced silicon pixel detectors for the HL-LHC. The performance of the system is verified. Single and quad FE-I4 modules functionalities are characterized with the developed system. The reduction of the material budget of the ATLAS ITk pixel detector is essential for a successful operation at high luminosity. Therefore, a low mass, efficient power distribution scheme to power detector modules (serial powering scheme) is investigated as well in the framework of this thesis. A serially powered pixel detector prototype is built with all the components that are needed for current distribution, data transmission, sensor biasing, bypassing and redundancy in order to prove the feasibility of implementing the serial powering scheme in the ITk. Detailed investigations of the electrical performance of the detector prototype equipped with FE-I4 quad modules are made with the help of the developed readout system.

Development of a serial powering scheme and a versatile characterization system for the ATLAS pixel detector upgrade

International Nuclear Information System (INIS)

Filimonov, Viacheslav

2017-08-01

In order to increase the probability of new discoveries the LHC will be upgraded to the HL-LHC. The upgrade of the ATLAS detector is an essential part of this program. The entire ATLAS tracking system will be replaced by an all-silicon detector called Inner Tracker (ITk) which should be able to withstand the increased luminosity of 5 x 10 34 cm -2 s -1 . The work presented in this thesis is focused on the ATLAS ITk pixel detector upgrade. Advanced silicon pixel detectors will be an essential part of the ITk pixel detector where they will be used for tracking and vertexing. Characterization of the pixel detectors is one of the required tasks for a successful ATLAS tracker upgrade. Therefore, the work presented in this thesis includes the development of a versatile and modular test system for advanced silicon pixel detectors for the HL-LHC. The performance of the system is verified. Single and quad FE-I4 modules functionalities are characterized with the developed system. The reduction of the material budget of the ATLAS ITk pixel detector is essential for a successful operation at high luminosity. Therefore, a low mass, efficient power distribution scheme to power detector modules (serial powering scheme) is investigated as well in the framework of this thesis. A serially powered pixel detector prototype is built with all the components that are needed for current distribution, data transmission, sensor biasing, bypassing and redundancy in order to prove the feasibility of implementing the serial powering scheme in the ITk. Detailed investigations of the electrical performance of the detector prototype equipped with FE-I4 quad modules are made with the help of the developed readout system.

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications.

Science.gov (United States)

Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew; Shi, Linxi; Gounis, Matthew J; Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo

2016-05-01

High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 μm. After resampling to 54 �

Radiation damage monitoring in the ATLAS pixel detector

International Nuclear Information System (INIS)

Seidel, Sally

2013-01-01

We describe the implementation of radiation damage monitoring using measurement of leakage current in the ATLAS silicon pixel sensors. The dependence of the leakage current upon the integrated luminosity is presented. The measurement of the radiation damage corresponding to an integrated luminosity 5.6 fb −1 is presented along with a comparison to a model. -- Highlights: ► Radiation damage monitoring via silicon leakage current is implemented in the ATLAS (LHC) pixel detector. ► Leakage currents measured are consistent with the Hamburg/Dortmund model. ► This information can be used to validate the ATLAS simulation model.

Monte Carlo simulation of the response of a pixellated 3D photo-detector in silicon

CERN Document Server

Dubaric, E; Froejdh, C; Norlin, B

2002-01-01

The charge transport and X-ray photon absorption in three-dimensional (3D) X-ray pixel detectors have been studied using numerical simulations. The charge transport has been modelled using the drift-diffusion simulator MEDICI, while photon absorption has been studied using MCNP. The response of the entire pixel detector system in terms of charge sharing, line spread function and modulation transfer function, has been simulated using a system level Monte Carlo simulation approach. A major part of the study is devoted to the effect of charge sharing on the energy resolution in 3D-pixel detectors. The 3D configuration was found to suppress charge sharing much better than conventional planar detectors.

Ultra thin continuously reinforced concrete pavement research in south Africa

CSIR Research Space (South Africa)

Perrie, BD

2007-08-01

Full Text Available Ultra thin continuously reinforced concrete pavements (UTCRCP), in literature also referred to as Ultra Thin Reinforced High Performance Concrete (UTHRHPC), have been used in Europe successfully as a rehabilitation measure on steel bridge decks...

Fabrication and characterization of n-on-n silicon pixel detectors compatible with the Medipix2 readout chip

Energy Technology Data Exchange (ETDEWEB)

Zorzi, N. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy)]. E-mail: zorzi@itc.it; Bisogni, M.G. [Dipartimento di Fisica, Universita di Pisa and Sezione INFN, Via Buonarroti 2, I-56127 Pisa (Italy); Boscardin, M. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Dalla Betta, G.-F. [Dipartimento di Informatica e Telecomunicazioni, Universita di Trento, Via Sommarive 14, I-38050 Povo (Trento) (Italy); Gregori, P. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Novelli, M. [Dipartimento di Fisica, Universita di Pisa and Sezione INFN, Via Buonarroti 2, I-56127 Pisa (Italy); Piemonte, C. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Quattrocchi, M. [Dipartimento di Fisica, Universita di Pisa and Sezione INFN, Via Buonarroti 2, I-56127 Pisa (Italy); Ronchin, S. [ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento) (Italy); Rosso, V. [Dipartimento di Fisica, Universita di Pisa and Sezione INFN, Via Buonarroti 2, I-56127 Pisa (Italy)

2005-07-01

Pixel detectors for mammographic applications have been fabricated at ITC-irst on 800 {mu}m thick silicon wafers adopting a double side n{sup +}-on-n fabrication technology. The activity aims at increasing the X-ray detection efficiency in the energy range of interest minimizing the risk of electrical discharges in hybrid systems operating at high voltages. The detectors, having a layout compatible with the Medipix2 photon counting chip, feature two different design solutions for the p-isolation between neighboring n{sup +}-pixels. We report on the characterization of the fabrication process and on preliminary results of electrical measurements on full detectors and pixel test structures. In particular, we found that the detectors can be reliably operated above the full depletion voltage regardless of the isolation design, that however, impacts the performances in terms of current-voltage characteristics, single pixel currents, inter-pixel resistances and inter-pixel capacitances.

Fabrication and characterization of n-on-n silicon pixel detectors compatible with the Medipix2 readout chip

International Nuclear Information System (INIS)

Zorzi, N.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.-F.; Gregori, P.; Novelli, M.; Piemonte, C.; Quattrocchi, M.; Ronchin, S.; Rosso, V.

2005-01-01

Pixel detectors for mammographic applications have been fabricated at ITC-irst on 800 μm thick silicon wafers adopting a double side n + -on-n fabrication technology. The activity aims at increasing the X-ray detection efficiency in the energy range of interest minimizing the risk of electrical discharges in hybrid systems operating at high voltages. The detectors, having a layout compatible with the Medipix2 photon counting chip, feature two different design solutions for the p-isolation between neighboring n + -pixels. We report on the characterization of the fabrication process and on preliminary results of electrical measurements on full detectors and pixel test structures. In particular, we found that the detectors can be reliably operated above the full depletion voltage regardless of the isolation design, that however, impacts the performances in terms of current-voltage characteristics, single pixel currents, inter-pixel resistances and inter-pixel capacitances

Qualification of barrel pixel detector modules for the Phase 1 Upgrade of the CMS vertex detector

CERN Document Server

Kudella, Simon

2016-01-01

To withstand the higher particle rates of LHC Runs 2 and 3, with expected luminosities of up to $2\\times 10^{34}\\,\\mathrm{cm^{-2}s^{-1}}$, the current CMS pixel detector at the LHC will be replaced as part of the CMS Phase I Upgrade during the extended winter shutdown in 2016/17. The new pixel detector features a new geometry with one additional detector layer in the barrel region~(BPIX) and one pair of additional disks in the forward region~(FPIX), new digital readout chips as well as a new CO$_{2}$-based cooling system for both the barrel and forward region. The BPIX detector module production is summarized, with special focus on the different stages of quality assurance. The quality tests as well as the calibrations which all produced modules undergo in a temperature and humidity controlled environment are described. Exemplarily, the KIT/Aachen production line and its subprocesses are presented together with its quality and yields.

Pixelated transmission-mode diamond X-ray detector.

Science.gov (United States)

Zhou, Tianyi; Ding, Wenxiang; Gaowei, Mengjia; De Geronimo, Gianluigi; Bohon, Jen; Smedley, John; Muller, Erik

2015-11-01

Fabrication and testing of a prototype transmission-mode pixelated diamond X-ray detector (pitch size 60-100 µm), designed to simultaneously measure the flux, position and morphology of an X-ray beam in real time, are described. The pixel density is achieved by lithographically patterning vertical stripes on the front and horizontal stripes on the back of an electronic-grade chemical vapor deposition single-crystal diamond. The bias is rotated through the back horizontal stripes and the current is read out on the front vertical stripes at a rate of ∼ 1 kHz, which leads to an image sampling rate of ∼ 30 Hz. This novel signal readout scheme was tested at beamline X28C at the National Synchrotron Light Source (white beam, 5-15 keV) and at beamline G3 at the Cornell High Energy Synchrotron Source (monochromatic beam, 11.3 keV) with incident beam flux ranges from 1.8 × 10(-2) to 90 W mm(-2). Test results show that the novel detector provides precise beam position (positional noise within 1%) and morphology information (error within 2%), with an additional software-controlled single channel mode providing accurate flux measurement (fluctuation within 1%).

Test Beam Performance Measurements for the Phase I Upgrade of the CMS Pixel Detector

CERN Document Server

Dragicevic, M.; Hrubec, J.; Steininger, H.; Gädda, A.; Härkönen, J.; Lampén, T.; Luukka, P.; Peltola, T.; Tuominen, E.; Tuovinen, E.; Winkler, A.; Eerola, P.; Tuuva, T.; Baulieu, G.; Boudoul, G.; Caponetto, L.; Combaret, C.; Contardo, D.; Dupasquier, T.; Gallbit, G.; Lumb, N.; Mirabito, L.; Perries, S.; Donckt, M.Vander; Viret, S.; Bonnin, C.; Charles, L.; Gross, L.; Hosselet, J.; Tromson, D.; Feld, L.; Karpinski, W.; Klein, K.; Lipinski, M.; Pierschel, G.; Preuten, M.; Rauch, M.; Wlochal, M.; Aldaya, M.; Asawatangtrakuldee, C.; Beernaert, K.; Bertsche, D.; Contreras-Campana, C.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Gallo, E.; Garcia, J.Garay; Hansen, K.; Haranko, M.; Harb, A.; Hauk, J.; Keaveney, J.; Kalogeropoulos, A.; Kleinwort, C.; Lohmann, W.; Mankel, R.; Maser, H.; Mittag, G.; Muhl, C.; Mussgiller, A.; Pitzl, D.; Reichelt, O.; Savitskyi, M.; Schütze, P.; Sola, V.; Spannagel, S.; Walsh, R.; Zuber, A.; Biskop, H.; Buhmann, P.; Centis-Vignali, M.; Garutti, E.; Haller, J.; Hoffmann, M.; Klanner, R.; Lapsien, T.; Matysek, M.; Perieanu, A.; Scharf, Ch.; Schleper, P.; Schmidt, A.; Schwandt, J.; Sonneveld, J.; Steinbrück, G.; Vormwald, B.; Wellhausen, J.; Abbas, M.; Amstutz, C.; Barvich, T.; Barth, Ch.; Boegelspacher, F.; Boer, W.De; Butz, E.; Casele, M.; Colombo, F.; Dierlamm, A.; Freund, B.; Hartmann, F.; Heindl, S.; Husemann, U.; Kornmeyer, A.; Kudella, S.; Muller, Th.; Simonis, H.J.; Steck, P.; Weber, M.; Weiler, Th.; Kiss, T.; Siklér, F.; Tölyhi, T.; Veszprémi, V.; Cariola, P.; Creanza, D.; Palma, M.De; Robertis, G.De; Fiore, L.; Franco, M.; Loddo, F.; Sala, G.; Silvestris, L.; Maggi, G.; My, S.; Selvaggi, G.; Albergo, S.; Cappello, G.; Costa, S.; Mattia, A.Di; Giordano, F.; Potenza, R.; Saizu, M.A.; Tricomi, A.; Tuve, C.; Focardi, E.; Dinardo, M.E.; Fiorendi, S.; Gennai, S.; Malvezzi, S.; Manzoni, R.A.; Menasce, D.; Moroni, L.; Pedrini, D.; Azzi, P.; Bacchetta, N.; Bisello, D.; Dall'Osso, M.; Pozzobon, N.; Tosi, M.; Solestizi, L.Alunni; Biasini, M.; Bilei, G.M.; Cecchi, C.; Checcucci, B.; Ciangottini, D.; Fanò, L.; Gentsos, C.; Ionica, M.; Leonardi, R.; Manoni, E.; Mantovani, G.; Marconi, S.; Mariani, V.; Menichelli, M.; Modak, A.; Morozzi, A.; Moscatelli, F.; Passeri, D.; Placidi, P.; Postolache, V.; Rossi, A.; Saha, A.; Santocchia, A.; Storchi, L.; Spiga, D.; Androsov, K.; Azzurri, P.; Bagliesi, G.; Basti, A.; Boccali, T.; Borrello, L.; Bosi, F.; Castaldi, R.; Ceccanti, M.; Ciocci, M.A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Giassi, A.; Grippo, M.T.; Ligabue, F.; Magazzu, G.; Mammini, P.; Mariani, F.; Mazzoni, E.; Messineo, A.; Moggi, A.; Morsani, F.; Palla, F.; Palmonari, F.; Profeti, A.; Raffaelli, F.; Ragonesi, A.; Rizzi, A.; Soldani, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P.G.; Abbaneo, D.; Ahmed, I.; Albert, E.; Auzinger, G.; Berruti, G.; Bonnaud, J.; Daguin, J.; D'Auria, A.; Detraz, S.; Dondelewski, O.; Engegaard, B.; Faccio, F.; Frank, N.; Gill, K.; Honma, A.; Kornmayer, A.; Labaza, A.; Manolescu, F.; McGill, I.; Mersi, S.; Michelis, S.; Onnela, A.; Ostrega, M.; Pavis, S.; Peisert, A.; Pernot, J.F.; Petagna, P.; Postema, H.; Rapacz, K.; Sigaud, C.; Tropea, P.; Troska, J.; Tsirou, A.; Vasey, F.; Verlaat, B.; Vichoudis, P.; Zwalinski, L.; Bachmair, F.; Becker, R.; di Calafiori, D.; Casal, B.; Berger, P.; Djambazov, L.; Donega, M.; Grab, C.; Hits, D.; Hoss, J.; Kasieczka, G.; Lustermann, W.; Mangano, B.; Marionneau, M.; Arbol, P.Martinez Ruiz del; Masciovecchio, M.; Meinhard, M.; Perozzi, L.; Roeser, U.; Starodumov, A.; Tavolaro, V.; Wallny, R.; Zhu, D.; Amsler, C.; Bösiger, K.; Caminada, L.; Canelli, F.; Chiochia, V.; de Cosa, A.; Galloni, C.; Hreus, T.; Kilminster, B.; Lange, C.; Maier, R.; Ngadiuba, J.; Pinna, D.; Robmann, P.; Taroni, S.; Yang, Y.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Kaestli, H.C.; Kotlinski, D.; Langenegger, U.; Meier, B.; Rohe, T.; Streuli, S.; Chen, P.H.; Dietz, C.; Fiori, F.; Grundler, U.; Hou, W.S.; Lu, R.S.; Moya, M.; Tsai, J.F.; Tzeng, Y.M.; Cussans, D.; Goldstein, J.; Grimes, M.; Newbold, D.; Hobson, P.; Reid, I.D.; Auzinger, G.; Bainbridge, R.; Dauncey, P.; Hall, G.; James, T.; Magnan, A.M.; Pesaresi, M.; Raymond, D.M.; Uchida, K.; Durkin, T.; Harder, K.; Shepherd-Themistocleous, C.; Chertok, M.; Conway, J.; Conway, R.; Flores, C.; Lander, R.; Pellett, D.; Ricci-Tam, F.; Squires, M.; Thomson, J.; Yohay, R.; Burt, K.; Ellison, J.; Hanson, G.; Olmedo, M.; Si, W.; Yates, B.R.; Dominguez, A.; Bartek, R.; Bentele, B.; Cumalat, J.P.; Ford, W.T.; Jensen, F.; Johnson, A.; Krohn, M.; Leontsinis, S.; Mulholland, T.; Stenson, K.; Wagner, S.R.; Apresyan, A.; Bolla, G.; Burkett, K.; Butler, J.N.; Canepa, A.; Cheung, H.W.K.; Christian, D.; Cooper, W.E.; Deptuch, G.; Derylo, G.; Gingu, C.; Grünendahl, S.; Hasegawa, S.; Hoff, J.; Howell, J.; Hrycyk, M.; Jindariani, S.; Johnson, M.; Kahlid, F.; Kwan, S.; Lei, C.M.; Lipton, R.; Sá, R.Lopes De; Liu, T.; Los, S.; Matulik, M.; Merkel, P.; Nahn, S.; Prosser, A.; Rivera, R.; Schneider, B.; Sellberg, G.; Shenai, A.; Siehl, K.; Spiegel, L.; Tran, N.; Uplegger, L.; Voirin, E.; Berry, D.R.; Chen, X.; Ennesser, L.; Evdokimov, A.; Gerber, C.E.; Makauda, S.; Mills, C.; Gonzalez, I.D.Sandoval; Alimena, J.; Antonelli, L.J.; Francis, B.; Hart, A.; Hill, C.S.; Parashar, N.; Stupak, J.; Bortoletto, D.; Bubna, M.; Hinton, N.; Jones, M.; Miller, D.H.; Shi, X.; Baringer, P.; Bean, A.; Khalil, S.; Kropivnitskaya, A.; Majumder, D.; Schmitz, E.; Wilson, G.; Ivanov, A.; Mendis, R.; Mitchell, T.; Skhirtladze, N.; Taylor, R.; Anderson, I.; Fehling, D.; Gritsan, A.; Maksimovic, P.; Martin, C.; Nash, K.; Osherson, M.; Swartz, M.; Xiao, M.; Acosta, J.G.; Cremaldi, L.M.; Oliveros, S.; Perera, L.; Summers, D.; Bloom, K.; Claes, D.R.; Fangmeier, C.; Suarez, R.Gonzalez; Monroy, J.; Siado, J.; Bartz, E.; Gershtein, Y.; Halkiadakis, E.; Kyriacou, S.; Lath, A.; Nash, K.; Osherson, M.; Schnetzer, S.; Stone, R.; Walker, M.; Malik, S.; Norberg, S.; Vargas, J.E.Ramirez; Alyari, M.; Dolen, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kharchilava, A.; Nguyen, D.; Parker, A.; Rappoccio, S.; Roozbahani, B.; Alexander, J.; Chaves, J.; Chu, J.; Dittmer, S.; McDermott, K.; Mirman, N.; Rinkevicius, A.; Ryd, A.; Salvati, E.; Skinnari, L.; Soffi, L.; Tao, Z.; Thom, J.; Tucker, J.; Zientek, M.; Akgün, B.; Ecklund, K.M.; Kilpatrick, M.; Nussbaum, T.; Zabel, J.; D'Angelo, P.; Johns, W.; Rose, K.

2017-05-30

A new pixel detector for the CMS experiment is being built, owing to the instantaneous luminosities anticipated for the Phase I Upgrade of the LHC. The new CMS pixel detector provides four-hit tracking while featuring a reduced material budget as well as new cooling and powering schemes. A new front-end readout chip mitigates buffering and bandwidth limitations, and comprises a low-threshold comparator. These upgrades allow the new pixel detector to sustain and improve the efficiency of the current pixel tracker at the increased requirements imposed by high luminosities and pile-up. In this paper, comprehensive test beam studies are presented which have been conducted to verify the design and to quantify the performance of the new detector assemblies in terms of tracking efficiency and spatial resolution. Under optimal conditions, the tracking efficiency has been determined to be ($99.95 \\pm 0.05$) \\%, while the intrinsic spatial resolution has been measured to be ($4.80 \\pm 0.25$) $\\mu$m and ($7.99 \\pm 0.21$...

Development of a customized SSC pixel detector readout for vertex tracking

International Nuclear Information System (INIS)

Barkan, O.; Atlas, E.L.; Marking, W.L.; Worley, S.; Yacoub, G.Y.; Kramer, G.; Arens, J.F.; Jernigan, J.G.; Shapiro, S.L.; Nygren, D.; Spieler, H.; Wright, M.

1990-01-01

The authors describe the readout architecture and progress to date in the development of hybrid PIN diode arrays for use as vertex detectors in the SSC environment. The architecture supports a self-timed mechanism for time stamping hit pixels, storing their xy coordinates and later selectively reading out only those pixels containing interesting data along with their coordinates. The peripheral logic resolves ambiguous pixel ghost locations and controls pixel neighbor readout to achieve high spatial resolution. A test lot containing 64 x 32 pixel arrays has been processed and is currently being tested. Each pixel contains 23 transistors and six capacitors consuming an area of 50μm by 150μm and dissipating about 20μW of power

Monolithic active pixel radiation detector with shielding techniques

Energy Technology Data Exchange (ETDEWEB)

Deptuch, Grzegorz W.

2018-03-20

A monolithic active pixel radiation detector including a method of fabricating thereof. The disclosed radiation detector can include a substrate comprising a silicon layer upon which electronics are configured. A plurality of channels can be formed on the silicon layer, wherein the plurality of channels are connected to sources of signals located in a bulk part of the substrate, and wherein the signals flow through electrically conducting vias established in an isolation oxide on the substrate. One or more nested wells can be configured from the substrate, wherein the nested wells assist in collecting charge carriers released in interaction with radiation and wherein the nested wells further separate the electronics from the sensing portion of the detector substrate. The detector can also be configured according to a thick SOA method of fabrication.

Research of high speed data readout and pre-processing system based on xTCA for silicon pixel detector

International Nuclear Information System (INIS)

Zhao Jingzhou; Lin Haichuan; Guo Fang; Liu Zhen'an; Xu Hao; Gong Wenxuan; Liu Zhao

2012-01-01

As the development of the detector, Silicon pixel detectors have been widely used in high energy physics experiments. It needs data processing system with high speed, high bandwidth and high availability to read data from silicon pixel detectors which generate more large data. The same question occurs on Belle II Pixel Detector which is a new style silicon pixel detector used in SuperKEKB accelerator with high luminance. The paper describes the research of High speed data readout and pre-processing system based on xTCA for silicon pixel detector. The system consists of High Performance Computer Node (HPCN) based on xTCA and ATCA frame. The HPCN consists of 4XFPs based on AMC, 1 AMC Carrier ATCA Board (ACAB) and 1 Rear Transmission Module. It characterized by 5 high performance FPGAs, 16 fiber links based on RocketIO, 5 Gbit Ethernet ports and DDR2 with capacity up to 18GB. In a ATCA frame, 14 HPCNs make up a system using the high speed backplane to achieve the function of data pre-processing and trigger. This system will be used on the trigger and data acquisition system of Belle II Pixel detector. (authors)

First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

International Nuclear Information System (INIS)

Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

2000-01-01

We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

Energy Technology Data Exchange (ETDEWEB)

Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

2000-07-11

We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

Evaluation of PET Imaging Resolution Using 350 mu{m} Pixelated CZT as a VP-PET Insert Detector

Science.gov (United States)

Yin, Yongzhi; Chen, Ximeng; Li, Chongzheng; Wu, Heyu; Komarov, Sergey; Guo, Qingzhen; Krawczynski, Henric; Meng, Ling-Jian; Tai, Yuan-Chuan

2014-02-01

A cadmium-zinc-telluride (CZT) detector with 350 μm pitch pixels was studied in high-resolution positron emission tomography (PET) imaging applications. The PET imaging system was based on coincidence detection between a CZT detector and a lutetium oxyorthosilicate (LSO)-based Inveon PET detector in virtual-pinhole PET geometry. The LSO detector is a 20 ×20 array, with 1.6 mm pitches, and 10 mm thickness. The CZT detector uses ac 20 ×20 ×5 mm substrate, with 350 μm pitch pixelated anodes and a coplanar cathode. A NEMA NU4 Na-22 point source of 250 μm in diameter was imaged by this system. Experiments show that the image resolution of single-pixel photopeak events was 590 μm FWHM while the image resolution of double-pixel photopeak events was 640 μm FWHM. The inclusion of double-pixel full-energy events increased the sensitivity of the imaging system. To validate the imaging experiment, we conducted a Monte Carlo (MC) simulation for the same PET system in Geant4 Application for Emission Tomography. We defined LSO detectors as a scanner ring and 350 μm pixelated CZT detectors as an insert ring. GATE simulated coincidence data were sorted into an insert-scanner sinogram and reconstructed. The image resolution of MC-simulated data (which did not factor in positron range and acolinearity effect) was 460 μm at FWHM for single-pixel events. The image resolutions of experimental data, MC simulated data, and theoretical calculation are all close to 500 μm FWHM when the proposed 350 μm pixelated CZT detector is used as a PET insert. The interpolation algorithm for the charge sharing events was also investigated. The PET image that was reconstructed using the interpolation algorithm shows improved image resolution compared with the image resolution without interpolation algorithm.

Characterization of a scintillating lithium glass ultra-cold neutron detector

Energy Technology Data Exchange (ETDEWEB)

Jamieson, B.; Rebenitsch, L.A.; Hansen-Romu, S.; Mammei, R.; Martin, J.W. [University of Winnipeg, Department of Physics, Winnipeg (Canada); Lauss, B. [Paul Scherrer Institute, Laboratory for Particle Physics, Villigen (Switzerland); Lindner, T. [TRIUMF, Vancouver (Canada); University of Winnipeg, Department of Physics, Winnipeg (Canada); Pierre, E. [TRIUMF, Vancouver (Canada); Osaka University, Research Centre for Nuclear Physics, Osaka (Japan)

2017-01-15

A {sup 6}Li-glass-based scintillation detector developed for the TRIUMF neutron electric dipole moment experiment was characterized using the ultra-cold neutron source at the Paul Scherrer Institute (PSI). The data acquisition system for this detector was demonstrated to perform well at rejecting backgrounds. An estimate of the absolute efficiency of background rejection of 99.7±0.1% is made. For variable ultra-cold neutron rate (varying from < 1 kHz to approx. 100 kHz per channel) and background rate seen at the Paul Scherrer Institute, we estimate that the absolute detector efficiency is 89.7{sup +1.3}{sub -1.9}%. Finally a comparison with a commercial Cascade detector was performed for a specific setup at the West-2 beamline of the ultra-cold neutron source at PSI. (orig.)

Module Production and Qualification for the Phase I Upgrade of the CMS Pixel Detector

CERN Document Server

AUTHOR|(CDS)2086689

2015-01-01

After consolidation of the LHC in 2013/14 its centre-of-mass energy will increase to 13TeV and the luminosity will reach $2 \\cdot 10^{34}\\, \\textnormal{cm}^{-2} \\textnormal{s}^{-1}$, which is twice the design luminosity. The latter will result in more simultaneous particle collisions, which would significantly increase the dead time of the current readout chip of the CMS pixel detector. Therefore the entire CMS pixel detector is replaced in 2016/17 and a new digital readout with larger buffers will be used to handle increasing pixel hit rates. An additional fourth barrel-layer provides more space points to improve track reconstruction. Half of the required modules for layer four is being produced at Karlsruhe Institute of Technology (KIT). This poster deals with the smallest discrete subunit of the pixel detector, the module and its assembly process. Moreover first production experience will be shown.

Characterization of Thin Pixel Sensor Modules Interconnected with SLID Technology Irradiated to a Fluence of 2⋅10 15 $n_{eq}$ /cm 2

CERN Document Server

Weigell, P; Beimforde, M; Macchiolo, A; Moser, H G; Nisius, R; Richter, R H

2011-01-01

A new module concept for future ATLAS pixel detector upgrades is presented, where thin n-in-p silicon sensors are connected to the front-end chip exploiting the novel Solid Liquid Interdiffusion technique (SLID) and the signals are read out via Inter Chip Vias (ICV) etched through the front-end. This should serve as a proof of principle for future four-side buttable pixel assemblies for the ATLAS upgrades, without the cantilever presently needed in the chip for the wire bonding. The SLID interconnection, developed by the Fraunhofer EMFT, is a possible alternative to the standard bump-bonding. It is characterized by a very thin eutectic Cu-Sn alloy and allows for stacking of different layers of chips on top of the first one, without destroying the pre-existing bonds. This paves the way for vertical integration technologies. Results of the characterization of the first pixel modules interconnected through SLID as well as of one sample irradiated to 2⋅10 15 \\,\

Energy Calibration of the Pixels of Spectral X-ray Detectors

CERN Document Server

Panta, Raj Kumar; Bell, Stephen T; Anderson, Nigel G; Butler, Anthony P; Butler, Philip H

2015-01-01

The energy information acquired using spectral X-ray detectors allows noninvasive identification and characterization of chemical components of a material. To achieve this, it is important that the energy response of the detector is calibrated. The established techniques for energy calibration are not practical for routine use in pre-clinical or clinical research environment. This is due to the requirements of using monochromatic radiation sources such as synchrotron, radio-isotopes, and prohibitively long time needed to set up the equipment and make measurements. To address these limitations, we have developed an automated technique for calibrating the energy response of the pixels in a spectral X-ray detector that runs with minimal user intervention. This technique uses the X-ray tube voltage (kVp) as a reference energy, which is stepped through an energy range of interest. This technique locates the energy threshold where a pixel transitions from not-counting (off) to counting (on). Similarly, we have deve...

Study of run time errors of the ATLAS Pixel Detector in the 2012 data taking period

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00339072

2013-05-16

The high resolution silicon Pixel detector is critical in event vertex reconstruction and in particle track reconstruction in the ATLAS detector. During the pixel data taking operation, some modules (Silicon Pixel sensor +Front End Chip+ Module Control Chip (MCC)) go to an auto-disable state, where the Modules don’t send the data for storage. Modules become operational again after reconfiguration. The source of the problem is not fully understood. One possible source of the problem is traced to the occurrence of single event upset (SEU) in the MCC. Such a module goes to either a Timeout or Busy state. This report is the study of different types and rates of errors occurring in the Pixel data taking operation. Also, the study includes the error rate dependency on Pixel detector geometry.

The Simbol-X Low Energy Detector

International Nuclear Information System (INIS)

Lechner, Peter

2009-01-01

For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

The Simbol-X Low Energy Detector

Science.gov (United States)

Lechner, Peter

2009-05-01

For the Low Energy Detector of Simbol-X a new type of active pixel sensor based on the integrated amplifier DEPFET has been developed. This concept combines large area, scalable pixel size, low noise, and ultra-fast readout. Flight representative prototypes have been processed with a performance matching the Simbol-X specifications and demonstrating the technology readiness.

Monte Carlo simulation of the imaging properties of scintillator-coated X-ray pixel detectors

International Nuclear Information System (INIS)

Hjelm, M.; Norlin, B.; Nilsson, H.-E.; Froejdh, C.; Badel, X.

2003-01-01

The spatial resolution of scintillator-coated X-ray pixel detectors is usually limited by the isotropic light spread in the scintillator. One way to overcome this limitation is to use a pixellated scintillating layer on top of the semiconductor pixel detector. Using advanced etching and filling techniques, arrays of CsI columns have been successfully fabricated and characterized. Each CsI waveguide matches one pixel of the semiconductor detector, limiting the spatial spread of light. Another concept considered in this study is to detect the light emitted from the scintillator by diodes formed in the silicon pore walls. There is so far no knowledge regarding the theoretical limits for these two approaches, which makes the evaluation of the fabrication process difficult. In this work we present numerical calculations of the signal-to-noise ratio (SNR) for detector designs based on scintillator-filled pores in silicon. The calculations are based on separate Monte Carlo (MC) simulations of X-ray absorption and light transport in scintillator waveguides. The resulting data are used in global MC simulations of flood exposures of the detector array, from which the SNR values are obtained. Results are presented for two scintillator materials, namely CsI(Tl) and GADOX

Development of Micromegas-like gaseous detectors using a pixel readout chip as collecting anode

International Nuclear Information System (INIS)

Chefdeville, M.

2009-01-01

This thesis reports on the fabrication and test of a new gaseous detector with a very large number of readout channels. This detector is intended for measuring the tracks of charged particles with an unprecedented sensitivity to single electrons of almost 100 %. It combines a metal grid for signal amplification called the Micromegas with a pixel readout chip as signal collecting anode and is dubbed GridPix. GridPix is a potential candidate for a sub-detector at a future electron linear collider (ILC) foreseen to work in parallel with the LHC around 2020--2030. The tracking capability of GridPix is best exploited if the Micromegas is integrated on the pixel chip. This integrated grid is called InGrid and is precisely fabricated by wafer post-processing. The various steps of the fabrication process and the measurements of its gain, energy resolution and ion back-flow property are reported in this document. Studies of the response of the complete detector formed by an InGrid and a TimePix pixel chip to X-rays and cosmic particles are also presented. In particular, the efficiency for detecting single electrons and the point resolution in the pixel plane are measured. Implications for a GridPix detector at ILC are discussed. (author)

Photon-counting hexagonal pixel array CdTe detector: Spatial resolution characteristics for image-guided interventional applications

Energy Technology Data Exchange (ETDEWEB)

Vedantham, Srinivasan; Shrestha, Suman; Karellas, Andrew, E-mail: andrew.karellas@umassmed.edu; Shi, Linxi; Gounis, Matthew J. [Department of Radiology, University of Massachusetts Medical School, Worcester, Massachusetts 01655 (United States); Bellazzini, Ronaldo; Spandre, Gloria; Brez, Alessandro; Minuti, Massimo [Istituto Nazionale di Fisica Nucleare (INFN), Pisa 56127, Italy and Pixirad Imaging Counters s.r.l., L. Pontecorvo 3, Pisa 56127 (Italy)

2016-05-15

Purpose: High-resolution, photon-counting, energy-resolved detector with fast-framing capability can facilitate simultaneous acquisition of precontrast and postcontrast images for subtraction angiography without pixel registration artifacts and can facilitate high-resolution real-time imaging during image-guided interventions. Hence, this study was conducted to determine the spatial resolution characteristics of a hexagonal pixel array photon-counting cadmium telluride (CdTe) detector. Methods: A 650 μm thick CdTe Schottky photon-counting detector capable of concurrently acquiring up to two energy-windowed images was operated in a single energy-window mode to include photons of 10 keV or higher. The detector had hexagonal pixels with apothem of 30 μm resulting in pixel pitch of 60 and 51.96 μm along the two orthogonal directions. The detector was characterized at IEC-RQA5 spectral conditions. Linear response of the detector was determined over the air kerma rate relevant to image-guided interventional procedures ranging from 1.3 nGy/frame to 91.4 μGy/frame. Presampled modulation transfer was determined using a tungsten edge test device. The edge-spread function and the finely sampled line spread function accounted for hexagonal sampling, from which the presampled modulation transfer function (MTF) was determined. Since detectors with hexagonal pixels require resampling to square pixels for distortion-free display, the optimal square pixel size was determined by minimizing the root-mean-squared-error of the aperture functions for the square and hexagonal pixels up to the Nyquist limit. Results: At Nyquist frequencies of 8.33 and 9.62 cycles/mm along the apothem and orthogonal to the apothem directions, the modulation factors were 0.397 and 0.228, respectively. For the corresponding axis, the limiting resolution defined as 10% MTF occurred at 13.3 and 12 cycles/mm, respectively. Evaluation of the aperture functions yielded an optimal square pixel size of 54 �

Thin n-in-p planar pixel sensors and active edge sensors for the ATLAS upgrade at HL-LHC

International Nuclear Information System (INIS)

Terzo, S; Macchiolo, A; Nisius, R; Paschen, B

2014-01-01

Silicon pixel modules employing n-in-p planar sensors with an active thickness of 200 μm, produced at CiS, and 100-200 μm thin active/slim edge sensor devices, produced at VTT in Finland have been interconnected to ATLAS FE-I3 and FE-I4 read-out chips. The thin sensors are designed for high energy physics collider experiments to ensure radiation hardness at high fluences. Moreover, the active edge technology of the VTT production maximizes the sensitive region of the assembly, allowing for a reduced overlap of the modules in the pixel layer close to the beam pipe. The CiS production includes also four chip sensors according to the module geometry planned for the outer layers of the upgraded ATLAS pixel detector to be operated at the HL-LHC. The modules have been characterized using radioactive sources in the laboratory and with high precision measurements at beam tests to investigate the hit efficiency and charge collection properties at different bias voltages and particle incidence angles. The performance of the different sensor thicknesses and edge designs are compared before and after irradiation up to a fluence of 1.4 × 10 16 n eq /cm 2

Pixel detectors for x-ray imaging spectroscopy in space

International Nuclear Information System (INIS)

Treis, J; Andritschke, R; Hartmann, R; Herrmann, S; Holl, P; Lauf, T; Lechner, P; Lutz, G; Meidinger, N; Porro, M; Richter, R H; Schopper, F; Soltau, H; Strueder, L

2009-01-01

Pixelated semiconductor detectors for X-ray imaging spectroscopy are foreseen as key components of the payload of various future space missions exploring the x-ray sky. Located on the platform of the new Spectrum-Roentgen-Gamma satellite, the eROSITA (extended Roentgen Survey with an Imaging Telescope Array) instrument will perform an imaging all-sky survey up to an X-ray energy of 10 keV with unprecedented spectral and angular resolution. The instrument will consist of seven parallel oriented mirror modules each having its own pnCCD camera in the focus. The satellite born X-ray observatory SIMBOL-X will be the first mission to use formation-flying techniques to implement an X-ray telescope with an unprecedented focal length of around 20 m. The detector instrumentation consists of separate high- and low energy detectors, a monolithic 128 x 128 DEPFET macropixel array and a pixellated CdZTe detector respectively, making energy band between 0.5 to 80 keV accessible. A similar concept is proposed for the next generation X-ray observatory IXO. Finally, the MIXS (Mercury Imaging X-ray Spectrometer) instrument on the European Mercury exploration mission BepiColombo will use DEPFET macropixel arrays together with a small X-ray telescope to perform a spatially resolved planetary XRF analysis of Mercury's crust. Here, the mission concepts and their scientific targets are briefly discussed, and the resulting requirements on the detector devices together with the implementation strategies are shown.

Pixel detectors for x-ray imaging spectroscopy in space

Science.gov (United States)

Treis, J.; Andritschke, R.; Hartmann, R.; Herrmann, S.; Holl, P.; Lauf, T.; Lechner, P.; Lutz, G.; Meidinger, N.; Porro, M.; Richter, R. H.; Schopper, F.; Soltau, H.; Strüder, L.

2009-03-01

Pixelated semiconductor detectors for X-ray imaging spectroscopy are foreseen as key components of the payload of various future space missions exploring the x-ray sky. Located on the platform of the new Spectrum-Roentgen-Gamma satellite, the eROSITA (extended Roentgen Survey with an Imaging Telescope Array) instrument will perform an imaging all-sky survey up to an X-ray energy of 10 keV with unprecedented spectral and angular resolution. The instrument will consist of seven parallel oriented mirror modules each having its own pnCCD camera in the focus. The satellite born X-ray observatory SIMBOL-X will be the first mission to use formation-flying techniques to implement an X-ray telescope with an unprecedented focal length of around 20 m. The detector instrumentation consists of separate high- and low energy detectors, a monolithic 128 × 128 DEPFET macropixel array and a pixellated CdZTe detector respectively, making energy band between 0.5 to 80 keV accessible. A similar concept is proposed for the next generation X-ray observatory IXO. Finally, the MIXS (Mercury Imaging X-ray Spectrometer) instrument on the European Mercury exploration mission BepiColombo will use DEPFET macropixel arrays together with a small X-ray telescope to perform a spatially resolved planetary XRF analysis of Mercury's crust. Here, the mission concepts and their scientific targets are briefly discussed, and the resulting requirements on the detector devices together with the implementation strategies are shown.

Pixel detectors for x-ray imaging spectroscopy in space

Energy Technology Data Exchange (ETDEWEB)

Treis, J; Andritschke, R; Hartmann, R; Herrmann, S; Holl, P; Lauf, T; Lechner, P; Lutz, G; Meidinger, N; Porro, M; Richter, R H; Schopper, F; Soltau, H; Strueder, L [MPI Semiconductor Laboratory, Otto-Hahn-Ring 6, D-81739 Munich (Germany)], E-mail: jft@hll.mpg.de

2009-03-15

Pixelated semiconductor detectors for X-ray imaging spectroscopy are foreseen as key components of the payload of various future space missions exploring the x-ray sky. Located on the platform of the new Spectrum-Roentgen-Gamma satellite, the eROSITA (extended Roentgen Survey with an Imaging Telescope Array) instrument will perform an imaging all-sky survey up to an X-ray energy of 10 keV with unprecedented spectral and angular resolution. The instrument will consist of seven parallel oriented mirror modules each having its own pnCCD camera in the focus. The satellite born X-ray observatory SIMBOL-X will be the first mission to use formation-flying techniques to implement an X-ray telescope with an unprecedented focal length of around 20 m. The detector instrumentation consists of separate high- and low energy detectors, a monolithic 128 x 128 DEPFET macropixel array and a pixellated CdZTe detector respectively, making energy band between 0.5 to 80 keV accessible. A similar concept is proposed for the next generation X-ray observatory IXO. Finally, the MIXS (Mercury Imaging X-ray Spectrometer) instrument on the European Mercury exploration mission BepiColombo will use DEPFET macropixel arrays together with a small X-ray telescope to perform a spatially resolved planetary XRF analysis of Mercury's crust. Here, the mission concepts and their scientific targets are briefly discussed, and the resulting requirements on the detector devices together with the implementation strategies are shown.