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Sample records for ultra-shallow junctions usj

  1. Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe

    International Nuclear Information System (INIS)

    Benjamin, M.C.; Hillard, R.J.; Borland, J.O.

    2005-01-01

    An accurate method to measure the four point probe (4PP) sheet resistance (R S ) of ultra shallow junction (USJ) Source-Drain Extension structures is described. The method utilizes Elastic Material probes (EM-probes) to form non-penetrating contacts to the silicon surface [R.J. Hillard, P.Y. Hung, William Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and Metrology for ULSI Technology, AIP Conference proceedings 683 (2003) 802.]. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is such that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with Secondary Ion Mass Spectroscopy (SIMS) junction depths less than 15 nm have been measured. The method is demonstrated on implanted USJ structures and found to be consistent with expectations

  2. Electrical characterization of InGaAs ultra-shallow junctions

    DEFF Research Database (Denmark)

    Petersen, Dirch Hjorth; Hansen, Ole; Bøggild, Peter

    2010-01-01

    In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the hi...

  3. Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions

    DEFF Research Database (Denmark)

    Petersen, Dirch Hjorth; Lin, Rong; Hansen, Torben Mikael

    2008-01-01

    have been used to characterize the sheet resistance uniformity of millisecond laser annealed USJs. They verify, both experimentally and theoretically, that the probe pitch of a four-point probe can strongly affect the measured sheet resistance. Such effect arises from the sensitivity (or "spot size......In this comparative study, the authors demonstrate the relationship/correlation between macroscopic and microscopic four-point sheet resistance measurements on laser annealed ultra-shallow junctions (USJs). Microfabricated cantilever four-point probes with probe pitch ranging from 1.5 to 500 mu m......") of an in-line four-point probe. Their study shows the benefit of the spatial resolution of the micro four-point probe technique to characterize stitching effects resulting from the laser annealing process....

  4. Ultra-Shallow P+/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation

    International Nuclear Information System (INIS)

    Hara, Shuhei; Tanaka, Yuki; Fukaya, Takumi; Matsumoto, Satoru; Suzuki, Toshiharu; Fuse, Genshu; Kudo, Toshio; Sakuragi, Susumu

    2008-01-01

    A combination of Ge pre-amorphization implantation (Ge-PAI), low-energy B implantation and laser annealing is a promising method to form highly-activated, abrupt and ultra-shallow junctions (USJ). In our previous report of IIT 2006, we succeeded in forming pn junctions less than 10 nm using non-melt double-pulsed green laser. However, a large leakage current under reverse bias was observed consequently due to residual defects in the implanted layer. In this study, a method to form USJ is proposed: a combination of low-temperature solid phase epitaxy and non-melt laser irradiation for B activation. Ge pre-amorphization implantation was performed at energy of 6 keV with a dose of 3x10 14 /cm 2 . Then B implantation was performed at energy of 0.2 keV with a dose of 1.2x10 15 /cm 2 . Samples were annealed at 400 deg. C for 10 h in nitrogen atmosphere. Subsequently, non-melt laser irradiation was performed at energy of 690 mJ/cm 2 and pulse duration of 100 ns with intervals of 300 ns. As a result, USJ around 10 nm with better crystallinity was successfully formed. And the leakage current of pn diodes was reduced significantly. Moreover, it is proven from secondary ion mass spectroscopy (SIMS) analysis that transient enhanced diffusion (TED) of B is specifically suppressed.

  5. Laser activation of Ultra Shallow Junctions (USJ) doped by Plasma Immersion Ion Implantation (PIII)

    International Nuclear Information System (INIS)

    Vervisch, Vanessa; Larmande, Yannick; Delaporte, Philippe; Sarnet, Thierry; Sentis, Marc; Etienne, Hasnaa; Torregrosa, Frank; Cristiano, Fuccio; Fazzini, Pier Francesco

    2009-01-01

    Today, the main challenges for the realization of the source/drain extensions concern the ultra-low energy implantation and the activation of the maximum amount of dopants with a minimized diffusion. Among the different annealing processes, one solution is the laser thermal annealing. Many studies [F. Torregrosa, C. Laviron, F. Milesi, M. Hernandez, H. Faik, J. Venturini, Proc. 14th International Conference on Ion Implant Technology, 2004; M. Hernandez, J. Venturini, D. Zahorski, J. Boulmer, D. Debarre, G. Kerrien, T. Sarnet, C. Laviron, M.N Semeria, D. Camel, J.L Santailler, Appl. Surf. Sci. 208-209 (2003) 345-351] have shown that the association of Plasma Immersion Ion Implantation (PIII) and Laser Thermal Process (LTP) allows to obtain junctions of a few nanometers with a high electrical activation. All the wafers studied have been implanted by PULSION (PIII implanter developed by Ion Beam Services) with an acceleration voltage of 1 kV and a dose of 6 x 10 15 at./cm 2 . In this paper, we compare the annealing process achieved with three excimer lasers: ArF, KrF and XeCl with a wavelength of respectively 193, 248 and 308 nm. We analyse the results in terms of boron activation and junction depth. To complete this study, we have observed the effect of pre-amorphization implantation (PAI) before PIII process on boron implantation and boron activation. We show that Ge PAI implanted by classical beam line allows a decrease of the junction depth from 20 down to 12 nm in the as-implanted condition. Transmission Electron Microscopy (TEM) analyses were performed in order to study the structure of pre-amorphized silicon and to estimate the thickness of the amorphous layer. In order to determine the sheet resistance (R s ) and the junction depth (X j ), we have used the four-point probe technique (4PP) and secondary ion mass spectrometry (SIMS) analysis. To complete the electrical characterizations some samples have been analyzed by non-contact optical measurements. All the

  6. Review of electrical characterization of ultra-shallow junctions with micro four-point probes

    DEFF Research Database (Denmark)

    Petersen, Dirch Hjorth; Hansen, Ole; Hansen, Torben M.

    2010-01-01

    Electrical characterization of ultra-shallow junctions, relying on advanced implant and anneal processes, has received much attention in the past few years since conventional characterization methods fail. With continued scaling of semiconductor devices, the problems associated with conventional ...

  7. Performance Analysis of Si-Based Ultra-Shallow Junction Photodiodes for UV Radiation Detection

    NARCIS (Netherlands)

    Shi, L.

    2013-01-01

    This thesis presents a performance investigation of newly-developed ultra-shallow junction photodiodes (PureB-diodes) for ultraviolet (UV) radiation detection. The photodiodes are fabricated by pure boron chemical vapor deposition (PureB CVD) technology, which can provide nanometer-thin boron

  8. Ultra Shallow Arsenic Junctions in Germanium Formed by Millisecond Laser Annealing

    DEFF Research Database (Denmark)

    Hellings, G.; Rosseel, E.; Simoen, E.

    2011-01-01

    Millisecond laser annealing is used to fabricate ultra shallow arsenic junctions in preamorphized and crystalline germanium, with peak temperatures up to 900 degrees C. At this temperature, As indiffusion is observed while yielding an electrically active concentration up to 5.0 x 10(19) cm(-3......) for a junction depth of 31 nm. Ge preamorphization and the consecutive solid phase epitaxial regrowth are shown to result in less diffusion and increased electrical activation. The recrystallization of the amorphized Ge layer during laser annealing is studied using transmission electron microscopy...

  9. Implant Monitoring Measurements On Ultra Shallow Implants Before And After Anneal Using Photomodulated Reflection And Junction Photovoltage Measurement Techniques

    Science.gov (United States)

    Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

    2011-01-01

    Ultra shallow junctions are becoming widely used in the micro- and nanoelectronic devices, and novel measurement methods are needed to monitor the manufacturing processes. Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are non-contact, nondestructive techniques suitable for characterizing both the implantation and the annealing process. Tests verify that these methods are consistent with each other and by using them together, defects originating in the implantation and anneal steps can be separated.

  10. A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

    International Nuclear Information System (INIS)

    Boucard, F.; Roger, F.; Chakarov, I.; Zhuk, V.; Temkin, M.; Montagner, X.; Guichard, E.; Mathiot, D.

    2005-01-01

    This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling

  11. A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

    Energy Technology Data Exchange (ETDEWEB)

    Boucard, F. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France)]. E-mail: Frederic.Boucard@silvaco.com; Roger, F. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Chakarov, I. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Zhuk, V. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Temkin, M. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Montagner, X. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Guichard, E. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Mathiot, D. [InESS, CNRS and Universite Louis Pasteur, 23 Rue du Loess, F67037 Strasbourg (France)]. E-mail: Daniel.Mathiot@iness.c-strasbourg.fr

    2005-12-05

    This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling.

  12. High precision micro-scale Hall Effect characterization method using in-line micro four-point probes

    DEFF Research Database (Denmark)

    Petersen, Dirch Hjorth; Hansen, Ole; Lin, Rong

    2008-01-01

    Accurate characterization of ultra shallow junctions (USJ) is important in order to understand the principles of junction formation and to develop the appropriate implant and annealing technologies. We investigate the capabilities of a new micro-scale Hall effect measurement method where Hall...... effect is measured with collinear micro four-point probes (M4PP). We derive the sensitivity to electrode position errors and describe a position error suppression method to enable rapid reliable Hall effect measurements with just two measurement points. We show with both Monte Carlo simulations...... and experimental measurements, that the repeatability of a micro-scale Hall effect measurement is better than 1 %. We demonstrate the ability to spatially resolve Hall effect on micro-scale by characterization of an USJ with a single laser stripe anneal. The micro sheet resistance variations resulting from...

  13. [USJ Herbarium of Costa Rica: history and contributions].

    Science.gov (United States)

    Morales, Carlos O

    2012-12-01

    In 2011 the Herbarium USJ of the University of Costa Rica became 80 years old and came up with 100 000 specimens of all the taxa that traditional botany studies. Data and figures on the history, the founders, and contributions of USJ to the knowledge of Costa Rican flora are summarized.

  14. Studies of ultra shallow n+-p junctions formed by low-energy As-implantation

    International Nuclear Information System (INIS)

    Girginoudi, D.; Georgoulas, N.; Thanailakis, A.; Polychroniadis, E.K.

    2004-01-01

    The generation and the evolution of extended defects in ultra-shallow n + -p junctions, formed by As ion implantation into silicon at low energies of 15, 10 and 5 keV and a dose of 1 x 10 15 cm -2 , and rapid thermal annealing (RTA) at temperatures of 650 deg. C ≤T ≤ 950 deg. C have been studied using transmission electron microscopy (TEM) measurements. The generated defects in the end-of-range region are dislocation loops, which grew larger and their density decreased with increasing annealing temperature. Reduction in the implantation energy causes a decrease in defect size and density as well as in dissolution temperature. The loops dissolved at 950 deg. C for 15 and 10 keV, whereas for 5 keV they dissolved at 850 deg. C. Arsenic transient enhanced diffusion (TED) studied by ToF-SIMS measurements was observed at temperatures above 650 deg. C for all implantation energies, with markedly less TED for the 5 keV, although As segregates near the surface region. The results suggest that the surface plays a key role on the formation and the dissolution of the dislocation loops and the As TED, by acting as a perfect sink of point defects. A significant degradation in electrical activation efficiency and a sharp increase in sheet resistance were observed at the low energy of 5 keV. In addition, the increase of temperature causes a slight decrease in electrical activation efficiency. Out-diffusion of As (10-25%) plays a significant role in the electrically active fraction of the dopant, due to the extreme proximity to the surface of high As concentrations. Junctions shallower than 40 nm, with 50-40% of the implanted dose electrically active and sheet resistance of 370-320 ohm/square, were obtained for the 5 keV. Finally, the TED during RTA was correctly simulated using a RTA model implemented in SSUPREM4 of the process simulator, including the dislocation loops and the dose loss

  15. Systematic study of shallow junction formation on germanium substrates

    DEFF Research Database (Denmark)

    Hellings, Geert; Rosseel, Erik; Clarysse, Trudo

    2011-01-01

    Published results on Ge junctions are benchmarked systematically using RS–XJ plots. The electrical activation level required to meet the ITRS targets is calculated. Additionally, new results are presented on shallow furnace-annealed B junctions and shallow laser-annealed As junctions. Co-implanting...

  16. Production-Worthy USJ Formation by Self-Regulatory Plasma Doping Method

    International Nuclear Information System (INIS)

    Sasaki, Y.; Ito, H.; Okashita, K.; Tamura, H.; Jin, C. G.; Mizuno, B.; Okumura, T.; Aiba, I.; Sauddin, H.; Iwai, H.; Fukagawa, Y.; Tsutsui, K.

    2006-01-01

    A new method of plasma doping that achieves tight control on dosimetry and uniformity has been developed. It uses a self-regulatory behavior of plasma processes that brings high accuracy on dose control and uniformity within 1.5%. The largest advantage of this self-regulatory plasma doping (SRPD) is that the accuracy of the process control is much less dependent on the uniformity of the plasma, which makes a revolutionary difference to the plasma process as it becomes free from the primary hardware constraint. A typical doping of boron using B2H6/He gas mixture at dose of 1x1015 ions/cm2 can achieve a uniformity of less than 1.5% across a 300mm silicon wafer when the plasma uniformity above the wafer plane is as poor as 10%. The SRPD process also forms very abrupt junctions such as less than 2nm/decade at the junction depth of 10nm due to an instantaneous amorphization of the wafer surface within the first 5 seconds of the process duration. Combined with the throughput advantage at low energy against the conventional ion implantation, the SRPD offers an ideal performance for USJ formation for 45nm technology node and beyond

  17. Two-dimensional dopant profiling for shallow junctions by TEM and AFM

    International Nuclear Information System (INIS)

    Yoo, K.

    2000-01-01

    The present work concerns the development of the Etch/TEM and Etch/AFM methods to obtain quantitative 2-D dopant profiles for the ultra shallow p-n junctions of the next generation of metal-oxide-semiconductor field effect transistors (MOSFETs). For these methods, thin foil (TEM) or bulk (AFM) cross-sectional specimens were etched using a dopant selective chemical so that local areas of the dopant implanted source/drain (S/D) regions were etched to different depths. The surface topography of the S/D regions was determined from the thickness fringes for the TEM method and by the direct measurement for the AFM method. The local etched depths were converted to etch rates, and these were then converted to corresponding 1-D and 2-D dopant profiles by the experimentally independent etch rate calibration curves. Shallow junction MOSFET samples were designed and fabricated with junction depths 60nm (n + /p), 80nm (n + /p) and 120nm (p + /n) using 0.25μm process technology. A new method using SOG (Spin-on-Glass) contributed to the high quality XTEM thin foil specimens. Controlled stirring of the etchant increased the dopant concentration selectivity and etching consistency. Computer modelling simulated the isotropic etching behaviours, which can introduce the significant error in dopant profiling for shallow and abrupt junction samples. Comprehensive quantitative results enabled the optimum etching time to be determined for the first time. Etch/TEM method gave 1-D dopant profiles that showed good agreement with 1-D Spreading Resistance Probe (SRP) dopant profiles for determining junction depths. 2-D dopant profiles gave L eff , i.e. the shortest lateral distance between the S/D junctions, of major importance for MOSFET performance. Values for L eff of 161, 159 and 123nm were determined from 60, 80 and 120nm junction depth samples respectively, compared with the 215nm MOSFET gate length. The resolution and accuracy of the Etch/TEM method are estimated as 2 and 10nm

  18. Study of shallow junction formation by boron-containing cluster ion implantation of silicon and two-stage annealing

    Science.gov (United States)

    Lu, Xin-Ming

    Shallow junction formation made by low energy ion implantation and rapid thermal annealing is facing a major challenge for ULSI (ultra large scale integration) as the line width decreases down to the sub micrometer region. The issues include low beam current, the channeling effect in low energy ion implantation and TED (transient enhanced diffusion) during annealing after ion implantation. In this work, boron containing small cluster ions, such as GeB, SiB and SiB2, was generated by using the SNICS (source of negative ion by cesium sputtering) ion source to implant into Si substrates to form shallow junctions. The use of boron containing cluster ions effectively reduces the boron energy while keeping the energy of the cluster ion beam at a high level. At the same time, it reduces the channeling effect due to amorphization by co-implanted heavy atoms like Ge and Si. Cluster ions have been used to produce 0.65--2keV boron for low energy ion implantation. Two stage annealing, which is a combination of low temperature (550°C) preannealing and high temperature annealing (1000°C), was carried out to anneal the Si sample implanted by GeB, SiBn clusters. The key concept of two-step annealing, that is, the separation of crystal regrowth, point defects removal with dopant activation from dopant diffusion, is discussed in detail. The advantages of the two stage annealing include better lattice structure, better dopant activation and retarded boron diffusion. The junction depth of the two stage annealed GeB sample was only half that of the one-step annealed sample, indicating that TED was suppressed by two stage annealing. Junction depths as small as 30 nm have been achieved by two stage annealing of sample implanted with 5 x 10-4/cm2 of 5 keV GeB at 1000°C for 1 second. The samples were evaluated by SIMS (secondary ion mass spectrometry) profiling, TEM (transmission electron microscopy) and RBS (Rutherford Backscattering Spectrometry)/channeling. Cluster ion implantation

  19. Modeling Bloch oscillations in ultra-small Josephson junctions

    Science.gov (United States)

    Vora, Heli; Kautz, Richard; Nam, Sae Woo; Aumentado, Jose

    In a seminal paper, Likharev et al. developed a theory for ultra-small Josephson junctions with Josephson coupling energy (Ej) less than the charging energy (Ec) and showed that such junctions demonstrate Bloch oscillations which could be used to make a fundamental current standard that is a dual of the Josephson volt standard. Here, based on the model of Geigenmüller and Schön, we numerically calculate the current-voltage relationship of such an ultra-small junction which includes various error processes present in a nanoscale Josephson junction such as random quasiparticle tunneling events and Zener tunneling between bands. This model allows us to explore the parameter space to see the effect of each process on the width and height of the Bloch step and serves as a guide to determine whether it is possible to build a quantum current standard of a metrological precision using Bloch oscillations.

  20. Accurate depth profiling for ultra-shallow implants using backside-SIMS

    International Nuclear Information System (INIS)

    Hongo, Chie; Tomita, Mitsuhiro; Takenaka, Miyuki

    2004-01-01

    We studied methods for accurate depth profiling for ultra-shallow implants using backside-SIMS. For the measurement of ultra-shallow profiles, the effects of surface transient and atomic mixing are not negligible. Therefore, we applied backside-SIMS to analyze ultra-shallow doping in order to exclude these effects. Backside-SIMS profiles show a sharper ion implantation tail than surface-side-SIMS profiles. In addition, the primary ion energy dependence becomes weaker when backside-SIMS is used [Surf. Interf. Anal. 29 (2000) 362; Appl. Surf. Sci. 203-204 (2003) 264; J. Vac. Sci. Technol. B 21 (2003) 1422]. However, the peak concentration of the backside sample was lower than that of the surface-side sample. Therefore, the sample flatness was estimated using the SIMS response function. Furthermore, SIMS profiles were simulated using SIMS response functions. This simulation shows how the sample flatness affects the SIMS profile

  1. Approaches to USJ Formation Beyond Molecular Implantation

    International Nuclear Information System (INIS)

    Hatem, C.; Renau, A.; Godet, L.; Kontos, A.; Papasouliotis, G.; England, J.; Arevalo, E.

    2008-01-01

    As junction depth requirements approach sub 10 nm and the sensitivity to residual implant damage continues to increase, the capability to produce abrupt, shallow profiles while maintaining low residual damage becomes a difficult challenge. Implantation induced amorphization has been widely applied to reduce channeling tails of implanted dopant profiles for integrated circuit manufacturing. This has been required to meet aggressive junction depth targets. The problem, however, is that pre-amorphization creates high defect densities that remain near the former amorphous-crystalline interface post anneal. These end of range (EOR) defects become of greater concern as the industry begins to move towards millisecond anneal technologies. Millisecond anneal, while capable of close to diffusionless activation and abrupt junctions, has caused concern for its inability to fully repair these EOR defects. There has been a recent focus on removing traditional PAI through molecular implantation with limited success. Towards this end we have investigated alternative techniques to reduce EOR damage while maintaining the junction depth, sheet resistance and abruptness. Here we describe the results of two of these techniques. The subsequent reduction in EOR through the use of each process and the resultant Rs, junction depth and abruptness are detailed.

  2. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  3. Activation and thermal stability of ultra-shallow B+-implants in Ge

    DEFF Research Database (Denmark)

    Yates, B. R.; Darby, B. L.; Petersen, Dirch Hjorth

    2012-01-01

    The activation and thermal stability of ultra-shallow B+ implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B+ implants in Ge...... from 5.0 × 1013 to 5.0 × 1015 cm-2 was studied using micro Hall effect measurements after annealing at 400-600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed...... was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B+ implants at 2, 4, and 6 keV to fluences ranging...

  4. Activation and thermal stability of ultra-shallow B+-implants in Ge

    International Nuclear Information System (INIS)

    Yates, B. R.; Darby, B. L.; Jones, K. S.; Petersen, D. H.; Hansen, O.; Lin, R.; Nielsen, P. F.; Romano, L.; Doyle, B. L.; Kontos, A.

    2012-01-01

    The activation and thermal stability of ultra-shallow B + implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B + implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B + implants at 2, 4, and 6 keV to fluences ranging from 5.0 × 10 13 to 5.0 × 10 15 cm −2 was studied using micro Hall effect measurements after annealing at 400–600 °C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 °C for 60 s was characterized by channeling analysis with a 650 keV H + beam by utilizing the 11 B(p, α)2α nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 °C.

  5. Junction leakage measurements with micro four-point probes

    DEFF Research Database (Denmark)

    Lin, Rong; Petersen, Dirch Hjorth; Wang, Fei

    2012-01-01

    We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated...... using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations....

  6. Counterdoped very shallow p+/n junctions obtained by B and Sb implantation and codiffusion in Si

    Science.gov (United States)

    Solmi, Sandro

    1998-02-01

    In this article we investigate the B and Sb codiffusion upon postimplantation annealing in order to fabricate very shallow p+/n junctions (⩽70 nm), suitable for a complementary metal-oxide-semiconductor technology with a channel length of 0.18 μm. The junctions are prepared by implanting Sb and subsequently BF2, at a higher dose, in an n-type Si substrate. The preamorphization with Sb avoids the B channeling and increases the n-type doping in the junction region, thus confining the depth of the p layer. Furthermore, both the transient enhanced diffusion, being the B implanted in a preamorphized layer, and the standard diffusion, due to the pairing between donors and acceptors, are strongly reduced. This procedure allows us to obtain very shallow junctions even after annealings with relatively high thermal budget, like 800 °C/8 h or 900 °C/1 h, or 950 °C/10 min or 1000 °C/60 s. We verified that dopant diffusion is strongly affected by a direct donor-acceptor interaction, and that good prediction of the experimental results can only be obtained using a simulation code which takes into account the formation of neutral, near immobile, Sb-B pairs.

  7. Broad and focused ion beams Ga+ implantation damage in the fabrication of p+-n Si shallow junctions

    International Nuclear Information System (INIS)

    Steckl, A.J.; Lin, C.M.; Patrizio, D.; Rai, A.K.; Pronko, P.P.

    1989-01-01

    The use of focused and broad beam Ga + implantation for the fabrication of p + -n Si shallow junctions is explored. In particular, the issue of ion induced damage and its effect on diode electrical properties is explored. FIB-fabricated junctions exhibit a deeper junction with lower sheet resistance and higher leakage current than the BB-implanted diodes. TEM analysis exhibits similar amorphization and recrystallization behavior for both implantation techniques with the BB case generating a higher dislocation loop density after a 900 degree C anneal. 6 refs., 5 figs., 1 tab

  8. Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, N.D., E-mail: Duy.Nguyen@imec.b [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Rosseel, E. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Takeuchi, S. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Physics and Astronomy, KU Leuven, B-3001 Leuven (Belgium); Everaert, J.-L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Yang, L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry and INPAC Institute, KU Leuven, B-3001 Leuven (Belgium); Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya, 464-8603 (Japan); Sakai, A. [Department of System Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Loo, R. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, J.C. [TSMC, R and D, 8, Li-Hsin 6th Rd., Hsinchu Science-Based Park, Hsinchu, Taiwan (China); TSMC assignee at IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Instituut voor Kern- en Stralingsfysika - IKS, KU Leuven, B-3001 Leuven (Belgium); Caymax, M. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2010-01-01

    We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 {sup o}C, we measured an active dopant concentration of about 2.1 x 10{sup 20} cm{sup -} {sup 3} and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10{sup 13} cm{sup -} {sup 2}) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

  9. Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

    International Nuclear Information System (INIS)

    Nguyen, N.D.; Rosseel, E.; Takeuchi, S.; Everaert, J.-L.; Yang, L.; Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H.; Zaima, S.; Sakai, A.; Loo, R.; Lin, J.C.; Vandervorst, W.; Caymax, M.

    2010-01-01

    We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 o C, we measured an active dopant concentration of about 2.1 x 10 20 cm - 3 and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10 13 cm - 2 ) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

  10. Formation of shallow junctions for VLSI by ion implantation and rapid thermal annealing

    International Nuclear Information System (INIS)

    Oeztuerk, M.C.

    1988-01-01

    In this work, several techniques were studied to form shallow junctions in silicon by ion implantation. These include ion implantation through thin layers of silicon dioxide and ion implantation through a thick polycrystalline silicon layer. These techniques can be used to reduce the junction depth. Their main disadvantage is dopant loss in the surface layer. As an alternative, preamorphization of the Si substrate prior to boron implantation to reduce boron channeling was investigated. The disadvantage of preamorphization is the radiation damage introduced into the Si substrate using the implant. Preamorphization by silicon self-implantation has been studied before. The goal of this study was to test Ge as an alternative amorphizing agent. It was found that good-quality p + -n junctions can be formed by both boron and BF 2 ion implantation into Ge-preamorphized Si provided that the preamorphization conditions are optimized. If the amorphous crystalline interface is sufficiently close to the surface, it is possible to completely remove the end-of-range damage. If these defects are not removed and are left in the depletion region, they can result in poor-quality, leaky junctions

  11. Effect of B+ Flux on the electrical activation of ultra-shallow B+ implants in Ge

    DEFF Research Database (Denmark)

    Yates, B.R.; Darby, B.L.; Petersen, Dirch Hjorth

    2012-01-01

    + implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation......The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B...... being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest...

  12. Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

    International Nuclear Information System (INIS)

    García, I; Rey-Stolle, I; Algora, C

    2012-01-01

    An n ++ -GaAs/p ++ -AlGaAs tunnel junction with a peak current density of 10 100 A cm -2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm -2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

  13. Molecular dynamic simulation on boron cluster implantation for shallow junction formation

    International Nuclear Information System (INIS)

    Yuan Li; Yu Min; Li Wei; Ji Huihui; Ren Liming; Zhan Kai; Huang Ru; Zhang Xing; Wang Yangyuan; Zhang Jinyu; Oka, Hideki

    2006-01-01

    Boron cluster ion implantation is a potential technology for shallow junction formation in integrated circuits manufacture. A molecular dynamic method for cluster implantation simulation, aiming at microelectronics application, is presented in this paper. Accurate geometric structures of boron clusters are described by the model, and the H atoms in clusters are included. A potential function taking the form of combining the ZBL and the SW potentials is presented here to model interaction among the atoms in the boron cluster. The impact of these models on cluster implantation simulation is investigated. There are notable impact on dopant distribution and amount of implantation defects with consideration of these models. The simulation on the distributions of B and H are verified by SIMS data

  14. Supramolecular tunneling junctions

    NARCIS (Netherlands)

    Wimbush, K.S.

    2012-01-01

    In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

  15. Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation

    Energy Technology Data Exchange (ETDEWEB)

    Kohli, P. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States) and Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)]. E-mail: puneet.kohli@sematech.org; Chakravarthi, S. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Jain, Amitabh [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Bu, H. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Mehrotra, M. [Silicon Technology Development, Texas Instruments, Dallas, TX 75243 (United States); Dunham, S.T. [Department of Electrical Engineering, University of Washington, Seattle, WA 98195 (United States); Banerjee, S.K. [Microelectronics Research Center, University of Texas, Austin, TX 78758 (United States)

    2004-12-15

    A nitride spacer with an underlying deposited tetraethoxysilane (TEOS) oxide that behaves as a convenient etch stop layer is a popular choice for sidewall spacer in modern complementary metal oxide semiconductor (CMOS) process flows. In this work, we have investigated the effect of the silicon nitride spacer process chemistry on the boron profile in silicon and the related dose loss of B from Si into silicon dioxide. This is reflected as a dramatic change in the junction depth, junction abruptness and junction peak concentration for the different nitride chemistries. We conclude that the silicon nitride influences the concentration of hydrogen in the silicon dioxide and different nitride chemistries result in different concentrations of hydrogen in the silicon dioxide during the final source/drain anneal. The presence of H enhances the diffusivity of B in the silicon dioxide and thereby results in a significant dose loss from the Si into the silicon dioxide. In this work, we show that this dose loss can be minimized and the junction profile engineered by choosing a desirable nitride chemistry.

  16. High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+-n silicon junction

    International Nuclear Information System (INIS)

    Smaali, K.; Faure, J.; El Hdiy, A.; Troyon, M.

    2008-01-01

    High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p + -n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p-n junctions with a resolution of about 20 nm

  17. Impact of multiple sub-melt laser scans on the activation and diffusion of shallow Boron junctions

    DEFF Research Database (Denmark)

    Rosseel, E.; Vandervorst, W.; Clarysse, T.

    2008-01-01

    , careful process optimization is required. While macroscopic variations can easily be addressed using the proper spatial power compensation it is more difficult to completely eliminate the micro scale non-uniformity which is intimately linked to the laser beam profile, the amount of overlaps and the scan...... pitch. In this work, we will present micro scale sheet resistance uniformity measurements for shallow 0.5 keV B junctions and zoom in on the underlying effect of multiple subsequent laser scans. A variety of characterization techniques are used to extract the relevant junction parameters and the role...... of different implantation and anneal parameters will be explored. It turns out that the observed sheet resistance decrease with increasing number of laser scans is caused on one hand by a temperature dependent increase of the activation level, and on the other hand, by a non-negligible temperature...

  18. A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers

    International Nuclear Information System (INIS)

    Ingerle, D.; Meirer, F.; Zoeger, N.; Pepponi, G.; Giubertoni, D.; Steinhauser, G.; Wobrauschek, P.; Streli, C.

    2010-01-01

    Grazing Incidence X-ray Fluorescence Analysis (GIXRF) is a powerful technique for depth-profiling and characterization of thin layers in depths up to a few hundred nanometers. By measurement of fluorescence signals at various incidence angles Grazing Incidence X-ray Fluorescence Analysis provides information on depth distribution and total dose of the elements in the layers. The technique is very sensitive even in depths of a few nanometers. As Grazing Incidence X-ray Fluorescence Analysis does not provide unambigous depth profile information and needs a realistic input depth profile for fitting, in the context of the EC funded European Integrated Activity of Excellence and Networking for Nano and Micro-Electronics Analysis (ANNA) Grazing Incidence X-ray Fluorescence Analysis is used as a complementary technique to Secondary Ion Mass Spectrometry (SIMS) for the characterization of Ultra Shallow Junctions (USJ). A measuring chamber was designed, constructed and tested to meet the requirements of Grazing Incidence X-ray Fluorescence Analysis. A measurement protocol was developed and tested. Some results for As implants as well as Hf based high k layers on Silicon are shown. For the determination of the bulk As content of the wafers, Instrumental Neutron Activation Analysis has also been applied for comparison.

  19. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

    Energy Technology Data Exchange (ETDEWEB)

    Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

    2016-01-04

    We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

  20. Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

    International Nuclear Information System (INIS)

    Fearn, Sarah; Chater, Richard; McPhail, David

    2004-01-01

    Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

  1. Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies

    International Nuclear Information System (INIS)

    Eyben, P.; Janssens, T.; Vandervorst, W.

    2005-01-01

    This work presents the recent progress in SSRM capabilities highlighting simultaneous performances in terms of sensitivity (<10%), spatial resolution (1-3 nm), dopant gradient resolution (1-2 nm/decade) and quantification accuracy (20-30%). The latter is illustrated through the analysis of different carrier profiling applications, i.e. the calibration of process simulations for a 90 nm n-MOS technology, the determination of the impact of nitridation on the lateral diffusion in a 40 nm n-MOS technology, the study of activation and diffusion problems in SPER-anneals of shallow implants, the observation of stress-induced diffusion mechanisms in the vicinity of shallow trench isolations (STI) and the study of diffusion and mobility mechanisms in SiGe MOS structures. Favorable comparisons with SCM and STM are also presented and do illustrate the unique capability of the SSRM technique

  2. Junction and circuit fabrication

    International Nuclear Information System (INIS)

    Jackel, L.D.

    1980-01-01

    Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

  3. The Leakage Current Improvement of a Ni-Silicided SiGe/Si Junction Using a Si Cap Layer and the PAI Technique

    International Nuclear Information System (INIS)

    Chang Jian-Guang; Wu Chun-Bo; Ji Xiao-Li; Ma Hao-Wen; Yan Feng; Shi Yi; Zhang Rong

    2012-01-01

    We investigate the leakage current of ultra-shallow Ni-silicided SiGe/Si junctions for 45 nm CMOS technology using a Si cap layer and the pre-amorphization implantation (PAI) process. It is found that with the conventional Ni silicide method, the leakage current of a p + (SiGe)—n(Si) junction is large and attributed to band-to-band tunneling and the generation-recombination process. The two leakage contributors can be suppressed quite effectively when a Si cap layer is added in the Ni silicide method. The leakage reduction is about one order of magnitude and could be associated with the suppression of the agglomeration of the Ni germano-silicide film. In addition, the PAI process after the application of a Si cap layer has little effect on improving the junction leakage but reduces the sheet resistance of the silicide film. As a result, the novel Ni silicide method using a Si cap combined with PAI is a promising choice for SiGe junctions in advanced technology. (cross-disciplinary physics and related areas of science and technology)

  4. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  5. Defect engineering via ion implantation to control B diffusion in Si

    International Nuclear Information System (INIS)

    Canino, M.; Regula, G.; Xu, M.; Ntzoenzok, E.; Pichaud, B.

    2009-01-01

    The processes which are currently studied in the fabrication of B-doped ultra shallow junctions (USJ) usually involve a preamorphization step to reduce B channelling effect during implantation and to improve B electrical activation. At this stage a high amount of Si interstitial atoms (Is), which dramatically increases the B diffusivity, is introduced. The introduction of voids in Si is a promising tool to control B transient enhanced diffusion (TED), because of their ability to capture Is. In this work the efficiency of a cavity band to reduce B TED is checked in silicon interstitial supersaturation conditions, obtained by high dose Si implantation. He is implanted either at 10 keV or at 50 keV with a fluence of 5 x 10 16 cm -2 . Conventional techniques to introduce and activate the B (conventional ion implantation and rapid thermal annealing (RTA)) are applied in order to have a better control of the technological process to focus on the benefit of the cavity layer. The samples were characterized by cross section transmission electron microscopy (XTEM), secondary ion mass spectroscopy (SIMS) and Hall Effect (HE). The latter shows that good activation of the B is achieved only after 1000 deg. C RTA, though a 900 deg. C RTA is sufficient for implantation-damage recovery, as it is confirmed by XTEM observations. B SIMS profiles show that the band of cavities plays its best effect in reducing B TED when it is located near the surface.

  6. Development of an industrial tool to make passivation layers for UV sensors improvement

    Energy Technology Data Exchange (ETDEWEB)

    Larmande, Yannick, E-mail: larmande@lp3.univ-mrs.fr [LP3 Laboratory, UMR 6182 CNRS - Mediterranean University, Campus de Luminy, Case 917, 13 288 Marseille Cedex 9 (France); Ion Beam Services, Rue Gaston Imbert Prolongee, 13 790 Peynier (France); Vervisch, Vanessa; Delaporte, Philippe; Sarnet, Thierry; Sentis, Marc [LP3 Laboratory, UMR 6182 CNRS - Mediterranean University, Campus de Luminy, Case 917, 13 288 Marseille Cedex 9 (France); Etienne, Hasnaa; Torregrosa, Frank [Ion Beam Services, Rue Gaston Imbert Prolongee, 13 790 Peynier (France)

    2012-09-15

    Highlights: Black-Right-Pointing-Pointer We have reached a sheet resistance lower than 500 {Omega}/sq for a junction depth of 29 nm and an abruptness of 3 nm/dec. Black-Right-Pointing-Pointer Electrical measurements on diodes have revealed a significant leakage current of around 10{sup -5} A/cm{sup 2}, revealing the presence of defects inside the junction. Black-Right-Pointing-Pointer Light Beam Induced Current (LBIC) characterization has shown that the defects are localized at the edge of the laser beam. - Abstract: Today, the collection of generated charges is a limiting problem for the realization of UV sensors. Indeed, the native silicon oxide of the surface acts as a region of recombination centers . Then, the sensors exhibit a low sensitivity in the UV wavelengths. An approach to overcome this drawback is the realization of a few nanometers thick passivation layer at the surface by creating an ultra-shallow junction (USJ) with a high activation level. The realization of such junctions requires two steps: first, the implantation of dopants which consists in introducing impurities at the surface of the substrate, then the thermal activation of these dopants to obtain the electrical characteristics of the junction. The Plasma Immersion Ion Implantation (PIII) process allows us to implant dopants in a very thin layer (10-20 nm) into the silicon substrate . These impurities are located in interstitial sites in the silicon, and need an activation process to modify the electrical properties of the layer. The step is performed by means of an excimer laser annealing process (ELA) to melt a very thin layer of the silicon substrate and then activate the dopants without diffusion. In the framework of the ALDIP project (Laser Activation of Dopants implanted by Plasma Immersion), IBS Company has developed with its partners a cluster to realize these two steps with industrial production rates and cleanliness. Four-point probe measurements and SIMS analyzes have been used to

  7. Post-annealing effects on shallow-junction characteristics caused by 20 keV BGe molecular ion implantation

    International Nuclear Information System (INIS)

    Liang, J.H.; Sang, Y.J.; Wang, C.-H.; Wang, T.W.; Hsu, J.Y.; Niu, H.; Tseng, M.S.

    2005-01-01

    This study examines the post-annealing-dependent behaviors of the shallow junction produced by implanting 10 15 cm -2 20 keV BGe ions into n-type silicon specimens. Post-annealing treatments consisted of one- and two-step annealing including both furnace annealing (FA) and rapid thermal annealing (RTA). Comparison of the one-step FA at 550 deg. C and the one-step RTA at 1050 deg. C revealed that boron depth profiles were slightly diffused in the former but exhibited considerable transient-enhanced diffusion (TED) in the latter. However, both the one-step FA- and RTA-annealed germanium depth profiles barely diffused, while the latter diffusing slightly deeper than the former. The optimum value of junction depth (x j ) times sheet resistance (R s ) was obtained with one-step FA at 550 deg. C for 1 h. The two-step annealing (FA at 550 deg. C and RTA at 1050 deg. C) results showed that the RTA-induced TED in the boron depth profiles could be effectively retarded only when FA took place for more than 3 h. Again, germanium depth profiles are also barely diffused while the corresponding TEDs were larger than those in one-step FA but smaller than those in one-step RTA. Furthermore, the two-step annealing of FA at 550 deg. C for 3 h followed by RTA at 1050 deg. C for 30 s is suggested when attempting to obtain an optimum value of x j R s

  8. Comparison of boron diffusion in silicon during shallow p{sup +}/n junction formation by non-melt excimer and green laser annealing

    Energy Technology Data Exchange (ETDEWEB)

    Aid, Siti Rahmah; Matsumoto, Satoru [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi, Kouhoku-ku, Yokohama, Kanagawa 223-8522 (Japan); Fuse, Genshu [SEN Corporation, SBS Tower 9F, 4-10-1 Yoga, Setagaya-ku, Tokyo 158-0097 (Japan); Sakuragi, Susumu [Sumitomo Heavy Industries Ltd., 19 Natsushima-cho, Yokosuka, Kanagawa 237-8555 (Japan)

    2011-12-15

    The combination of Ge pre-amorphization implantation, low-energy boron implantation, and non-melt laser annealing is a promising method for forming ultrashallow p{sup +}/n junctions in silicon. In this study, shallow p{sup +}/n junctions were formed by non-melt annealing implanted samples using a green laser (visible laser). The dopant diffusion, activation, and recrystallization of an amorphous silicon layer were compared with those obtained in our previous study in which non-melt annealing was performed using a KrF excimer laser (UV laser). The experimental results reveal that only slight diffusion of boron in the tail region occurred in green-laser-annealed samples. In contrast, remarkable boron diffusion occurred in KrF-laser-annealed samples for very short annealing times. Recrystallization of the amorphous silicon layer was slower in green-laser-annealed samples than in KrF-laser-annealed samples. We consider the penetration depth and the pulse duration are important factors that may affect boron diffusion. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Characterization of nano-powder grown ultra-thin film p-CuO/n-Si hetero-junctions by employing vapour-liquid-solid method for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Sultana, Jenifar; Das, Anindita [Centre for Research in Nanoscience and Nanotechnology (CRNN), Kolkata 700098 (India); Das, Avishek [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India); Saha, Nayan Ranjan [Department of Polymer Science and Technology, University of Calcutta, Kolkata 700009 (India); Karmakar, Anupam [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India); Chattopadhyay, Sanatan, E-mail: scelc@caluniv.ac.in [Department of Electronic Science, University of Calcutta, Kolkata 700009 (India)

    2016-08-01

    In this work, the CuO nano-powder has been synthesized by employing chemical bath deposition technique for its subsequent use to grow ultrathin film (20 nm) of p-CuO on n-Si substrate for the fabrication of p-CuO/n-Si hetero-junction diodes. The thin CuO film has been grown by employing vapour-liquid-solid method. The crystalline structure and chemical phase of the film are characterized by employing field-emission scanning electron microscopy and X-ray diffraction studies. Chemical stoichiometry of the film has been confirmed by using energy dispersive X-ray spectroscopy. The potential for photovoltaic applications of such films is investigated by measuring the junction current-voltage characteristics and by extracting the relevant parameters such as open circuit photo-generated voltage, short circuit current density, fill-factor and energy conversion efficiency. - Highlights: • Synthesis of CuO nano-powder by CBD method • Growth of ultra-thin film of CuO by employing VLS method for the first time • Physical and electrical characterization of such films for photovoltaic applications • Estimation of energy conversion efficiency of the p-CuO/n-Si p-n junction solar cell.

  10. Advanced 65 nm CMOS devices fabricated using ultra-low energy plasma doping

    International Nuclear Information System (INIS)

    Walther, S.; Lenoble, D.; Lallement, F.; Grouillet, A.; Erokhin, Y.; Singh, V.; Testoni, A.

    2005-01-01

    For leading edge CMOS and DRAM technologies, plasma doping (PLAD) offers several unique advantages over conventional beamline implantation. For ultra-low energy source and drain extensions (SDE), source drain contact and high dose poly doping implants PLAD delivers 2-5x higher throughput compared to beamline implanters. In this work we demonstrate process performance and process integration benefits enabled by plasma doping for advanced 65 nm CMOS devices. Specifically, p + /n ultra-shallow junctions formed with BF 3 plasma doping have superior X j /R s characteristics to beamline implants and yield up to 30% lower R s for 20 nm X j while using standard spike anneal with ramp-up rate of 75 deg. C/s. These results indicate that PLAD could extend applicability of standard spike anneal by at least one technology node past 65 nm. A CMOS split lot has been run to investigate process integration advantages unique to plasma doping and to determine CMOS device characteristics. Device data measured on 65 nm transistors fabricated with offset spacers indicate that devices with SDE formed by plasma doping have superior V t roll-off characteristics arguably due to improved lateral gate-overlap of PLAD SDE junctions. Furthermore, offset spacers could be eliminated in 65 nm devices with PLAD SDE implants while still achieving V t roll-off and I on -I off performance at least equivalent to control devices with offset spacers and SDE formed by beamline implantation. Thus, another advantage of PLAD is simplified 65 nm CMOS manufacturing process flow due to elimination of offset spacers. Finally, we present process transfer from beamline implants to PLAD for several applications, including SDE and gate poly doping with very high productivity

  11. Proximity effect and hot-electron diffusion in Ag/Al2O3/Al tunnel junctions

    International Nuclear Information System (INIS)

    Netel, H.; Jochum, J.; Labov, S.E.; Mears, C.A.; Frank, M.; Chow, D.; Lindeman, M.A.; Hiller, L.J.

    1997-01-01

    We have fabricated Ag/Al 2 O 3 /Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition, these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z, ultra-pure superconducting crystals. 5 refs., 8 figs

  12. Radiation effects on the current-voltage and capacitance-voltage characteristics of advanced p-n junction diodes surrounded by shallow trench isolation

    International Nuclear Information System (INIS)

    Poyai, A.; Simoen, E.; Claeys, C.; Hayama, K.; Kobayashi, K.; Ohyama, H.

    2002-01-01

    This paper investigates the impact of 20 MeV proton irradiation on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of different geometry n + -p-well junction diodes surrounded by shallow trench isolation and processed in a 0.18 μm CMOS technology. From I-V characteristics, a higher current damage coefficient was found for the bulk than for the peripheral component. The radiation-induced boron de-activation resulted in a lowering of the p-well doping, which has been derived from high-frequency C-V measurements. This was confirmed by deep level transient spectroscopy (DLTS) analysis, revealing the presence of interstitial boron related radiation defects. As will be demonstrated for the bulk leakage-current damage coefficient, the electric field enhanced generation rate of charge carriers and the radiation-induced boron de-activation should be accounted for properly

  13. GaAs nanowire array solar cells with axial p-i-n junctions.

    Science.gov (United States)

    Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

    2014-06-11

    Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

  14. Technology Enabling Ultra High Concentration Multi-Junction Cells. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Bedair, S. M.; Colter, Peter

    2016-03-30

    The project goal is to enable multijunction cells to operate at greater than 2000× suns intensity with efficiency above forty percent. To achieve this goal the recipients have developed a robust high-bandgap tunnel junction, reduce series resistance, and integrated a practical heat dissipation scheme.

  15. High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

    International Nuclear Information System (INIS)

    Huang Wei; Lu Chao; Yu Jue; Wei Jiang-Bin; Chen Chao-Wen; Wang Jian-Yuan; Xu Jian-Fang; Li Cheng; Chen Song-Yan; Lai Hong-Kai; Wang Chen; Liu Chun-Li

    2016-01-01

    High-performance Ge n + /p junctions were fabricated at a low formation temperature from 325 °C to 400 °C with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n + /p junction has a rectification ratio of 5.6× 10 4 and a forward current of 387 A/cm 2 at −1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET. (paper)

  16. Dynamics of Defects and Dopants in Complex Systems: Si and Oxide Surfaces and Interfaces

    Science.gov (United States)

    Kirichenko, Taras; Yu, Decai; Banarjee, Sanjay; Hwang, Gyeong

    2004-10-01

    Fabrication of forthcoming nanometer scale electronic devices faces many difficulties including formation of extremely shallow and highly doped junctions. At present, ultra-low-energy ion implantation followed by high-temperature thermal annealing is most widely used to fabricate such ultra-shallow junctions. In the process, a great challenge lies in achieving precise control of redistribution and electrical activation of dopant impurities. Native defects (such as vacancies and interstitials) generated during implantation are known to be mainly responsible for the TED and also influence significantly the electrical activation/deactivation. Defect-dopant dynamics is rather well understood in crystalline Si and SiO2. However, little is known about their diffusion and annihilation (or precipitation) at the surfaces and interfaces, despite its growing importance in determining junction profiles as device dimensions get smaller. In this talk, we will present our density functional theory calculation results on the atomic and electronic structure and dynamical behavior of native defects and dopant-defect complexes in disordered/strained Si and oxide systems, such as i) clean and absorbent-modified Si(100) surface and subsurface layers, ii) amorphous-crystalline Si interfaces and iii) amorphous SiO2/Si interfaces. The fundamental understanding and data is essential in developing a comprehensive kinetic model for junction formation, which would contribute greatly in improving current process technologies.

  17. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

    Science.gov (United States)

    Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-12-14

    The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

  18. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions

    International Nuclear Information System (INIS)

    Avilés Félix, L; Sirena, M; Agüero Guzmán, L A; González Sutter, J; Pons Vargas, S; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-01-01

    The transport properties of ultra-thin SrTiO 3 (STO) layers grown over YBa 2 Cu 3 O 7 electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions. (paper)

  19. Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage

    Science.gov (United States)

    Wang, Zeheng; Chen, Wanjun; Wang, Fangzhou; Cao, Jun; Sun, Ruize; Ren, Kailin; Luo, Yi; Guo, Songnan; Wang, Zirui; Jin, Xiaosheng; Yang, Lei; Zhang, Bo

    2018-05-01

    An ultra-low turn-on voltage (VT) Γ-shaped anode AlGaN/GaN Schottky barrier diode (GA-SBD) is proposed via modeling and simulation for the first time, in which a Γ-shaped anode consists of a metal-2DEG junction together with a metal-AlGaN junction beside a shallowly recessed MIS field plate (MFP). An analytic forward current-voltage model matching the simulation results well is presented where an ultra-low VT of 0.08 V is obtained. The turn-on and blocking mechanisms are investigated to reveal the GA-SBD's great potential for applications of highly efficient power ICs.

  20. Monitoring Ion Implantation Energy Using Non-contact Characterization Methods

    Science.gov (United States)

    Tallian, M.; Pap, A.; Mocsar, K.; Somogyi, A.; Nadudvari, Gy.; Kosztka, D.; Pavelka, T.

    2011-01-01

    State-of-the-art ultra-shallow junctions are produced using extremely low ion implant energies, down to the range of 1-3 keV. This can be achieved by a variety of production techniques; however there is a significant risk that the actual implantation energy differs from the desired value. To detect this, sensitive measurement methods need to be utilized. Experiments show that both Photomodulated Reflection measurements before anneal and Junction Photovoltage-based sheet resistance measurements after anneal are suitable for this purpose.

  1. Combining pixel and object based image analysis of ultra-high resolution multibeam bathymetry and backscatter for habitat mapping in shallow marine waters

    Science.gov (United States)

    Ierodiaconou, Daniel; Schimel, Alexandre C. G.; Kennedy, David; Monk, Jacquomo; Gaylard, Grace; Young, Mary; Diesing, Markus; Rattray, Alex

    2018-06-01

    Habitat mapping data are increasingly being recognised for their importance in underpinning marine spatial planning. The ability to collect ultra-high resolution (cm) multibeam echosounder (MBES) data in shallow waters has facilitated understanding of the fine-scale distribution of benthic habitats in these areas that are often prone to human disturbance. Developing quantitative and objective approaches to integrate MBES data with ground observations for predictive modelling is essential for ensuring repeatability and providing confidence measures for habitat mapping products. Whilst supervised classification approaches are becoming more common, users are often faced with a decision whether to implement a pixel based (PB) or an object based (OB) image analysis approach, with often limited understanding of the potential influence of that decision on final map products and relative importance of data inputs to patterns observed. In this study, we apply an ensemble learning approach capable of integrating PB and OB Image Analysis from ultra-high resolution MBES bathymetry and backscatter data for mapping benthic habitats in Refuge Cove, a temperate coastal embayment in south-east Australia. We demonstrate the relative importance of PB and OB seafloor derivatives for the five broad benthic habitats that dominate the site. We found that OB and PB approaches performed well with differences in classification accuracy but not discernible statistically. However, a model incorporating elements of both approaches proved to be significantly more accurate than OB or PB methods alone and demonstrate the benefits of using MBES bathymetry and backscatter combined for class discrimination.

  2. Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions

    International Nuclear Information System (INIS)

    Girginoudi, D.; Tsiarapas, C.

    2008-01-01

    The impact of fluorine (F) co-implantation on boron (B) deactivation and B TED, as well as on the I-V characteristics of p + n shallow junctions, have been studied for low (10 keV) and high (70 keV) energy Ge preamorphised (PAI) n-type Si samples, that were annealed at 600 deg. C and 700 deg. C. Transmission electron microscopy revealed the existence of defects and dislocation loops (DLs) in the EOR region. It has been found that F stabilizes the EOR defect population via the increase of EOR defect density and the percentage of the stable DLs. This phenomenon is more pronounced when the preamorphisation is shallow (10 keV Ge energy). SIMS and sheet resistance measurements showed the formation of BICs, which implies B deactivation and increased B TED, especially in the shallow PAI samples and at the 700 deg. C annealing temperature. The role of F on B deactivation is multiplex: in the 70 keV PAI samples, and at 600 deg. C annealing temperature, F forms clusters with B causing further B deactivation. In the case of 700 deg. C annealing temperature, F probably forms fluorine-vacancy (F-V) clusters that trap silicon interstitials (Is), thus reducing the possibility of forming BICs and, therefore, resulting in B re-activation and suppression of B TED. Conversely, in the 10-keV PAI samples, and irrespective of the annealing temperature, F improves significantly the sheet resistance, and we suggest that this is a result of the contribution of two physical mechanisms: in the EOR region, F is trapped into DLs, which release less Is than other types of defects. In the amorphous part of Si, there are probably F-V clusters that trap the Is released from the EOR region. Although F in most cases improves B deactivation, it increases the reverse leakage currents, probably due to the stabilization of the EOR defects. As regards the carrier-transport mechanisms, it has been found that the dominant mechanism is the generation-recombination process under forward bias as well as under

  3. Sub-metric Resolution FWI of Ultra-High-Frequency Marine Reflection Seismograms. A Remote Sensing Tool for the Characterisation of Shallow Marine Geohazard

    Science.gov (United States)

    Provenzano, G.; Vardy, M. E.; Henstock, T.; Zervos, A.

    2017-12-01

    A quantitative high-resolution physical model of the top 100 meters of the sub-seabed is of key importance for a wide range of shallow geohazard scenarios: identification of potential shallow landsliding, monitoring of gas storage sites, and assessment of offshore structures stability. Cur- rently, engineering-scale sediment characterisation relies heavily on direct sampling of the seabed and in-situ measurements. Such an approach is expensive and time-consuming, as well as liable to alter the sediment properties during the coring process. As opposed to reservoir-scale seismic exploration, ultra-high-frequency (UHF, 0.2-4.0 kHz) multi-channel marine reflection seismic data are most often limited to a to semi-quantitative interpretation of the reflection amplitudes and facies geometries, leaving largely unexploited its intrinsic value as a remote characterisation tool. In this work, we develop a seismic inversion methodology to obtain a robust sub-metric resolution elastic model from limited-offset, limited-bandwidth UHF seismic reflection data, with minimal pre-processing and limited a priori information. The Full Waveform Inversion is implemented as a stochastic optimiser based upon a Genetic Algorithm, modified in order to improve the robustness against inaccurate starting model populations. Multiple independent runs are used to create a robust posterior model distribution and quantify the uncertainties on the solution. The methodology has been applied to complex synthetic examples and to real datasets acquired in areas prone to shallow landsliding. The inverted elastic models show a satisfactory match with the ground-truths and a good sensitivity to relevant variations in the sediment texture and saturation state. We apply the methodology to a range of synthetic consolidating slopes under different loading conditions and sediment properties distributions. Our work demonstrates that the seismic inversion of UHF data has the potential to become an important

  4. Quantum dynamics of small Josephson junctions: an application to superconductivity in granular films

    International Nuclear Information System (INIS)

    Fisher, M.P.A.

    1986-01-01

    This thesis is devoted to a study of the quantum dynamics of small Josephson junctions. Of interest are those features of the junction's behavior which depend explicitly on the quantum mechanical nature of the phase difference phi between the superconductors. In Chapters I and II several calculations are described which focus on the junction's DC resistance. A fully quantum mechanical Hamiltonian is employed that incorporates the dissipative effects due to the unpaired electrons by coupling to a bath of harmonic oscillators. It is shown that the model exhibits a novel zero temperature phase transition as a function of the strength of the dissipation. In the low dissipation regime the phase is free to tunnel quantum mechanically and the junction's resistance is finite; in response to an external current, tunnelling induces successive 2π phase slips leading to a finite voltage state. In contrast, in the high dissipation regime, tunnelling is suppressed and the junction behaves as a superconductor carrying current with no resistive losses. In Chapters III and IV, these results are applied in an attempt to explain the recent observation that in ultra thin Sn films there is apparently a universal normal state sheet resistance above which superconductivity cannot be established

  5. Study of shallow trench isolation technology with a poly-Si sidewall buffer layer

    International Nuclear Information System (INIS)

    Juang, M H; Chen, C L; Jang, S L

    2008-01-01

    Shallow trench isolation (STI) technology with a poly-Si buffer layer at the trench sidewall has been studied. At the densification temperature of 950 °C, for the samples without using a poly-Si buffer layer, the resulting junction shows a leakage of about 700 nA cm −2 for a diode area of 100 × 100 µm 2 , primarily due to large peripheral junction leakage. The large leakage is ascribed to the defect generation caused by a thermally induced stress near the trench sidewall. The usage of a poly-Si buffer layer in the trench sidewall is found to significantly improve the junction characteristics. As a result, when a 40 nm poly-Si buffer layer is sandwiched between the Si substrate and the trench-fill silicon oxide, the resultant junctions show a leakage of only about 8 nA cm −2 . This result may reflect the considerably reduced thermally induced stress near the trench sidewall. Furthermore, at the densification temperature of 1100 °C, the usage of a poly-Si buffer layer can help to achieve excellent junctions with a leakage smaller than 5 nA cm −2 for a diode area of 100 × 100 µm 2

  6. Inverse Design of a SOI T-junction Polarization Beamsplitter

    Science.gov (United States)

    Ye, Zi; Qiu, Jifang; Meng, Chong; Zheng, Li; Dong, Zhenli; Wu, Jian

    2017-06-01

    A SOI T-junction polarization beamsplitter with an ultra-compact footprint of 2.8×2.8μm2 is designed based on the method of inverse design. Simulated results show that the conversion efficiencies for TE and TM lights are 73.34% (simulated insertion loss of 2dB) and 80.4% (simulated insertion loss of 1.7dB) at 1550nm, respectively; the simulated extinction ratios for TE and TM lights are 19.3dB and 13.99dB at 1558nm, respectively.

  7. Superconductor-Insulator transition in a single Josephson junction

    International Nuclear Information System (INIS)

    Sonin, E.B.; PenttilA, J.S.; Parts, O.; Hakonen, P.J.; Paalanen, M.A.

    1999-01-01

    For ultra small Josephson junctions, when quantum effects become important, dissipative phase transition (DPT) has been predicted. The physical origin of this transition is the suppression of macroscopic quantum tunneling of the phase by tile interaction with dissipative quantum-mechanical environment. Macroscopic quantum tunneling destroys superconductivity of a junction, whereas suppression of tunneling restores superconductivity. Hence, this transition is often called a superconductor-insulator transition (SIT). SIT was predicted for various systems, but its detection in a single Josephson junction is of principal importance since it is the simplest system where this transition is expected, without any risk of being masked by other physical processes, as is possible in more complicated systems like regular or' random Josephson junction arrays. In this Letter we present results of our measurements on R = dV/dI vs. I curves, for a variety of single small isolated Josephson junctions, shunted and un shunted, with different values of capacitance C and normal state tunneling resistance RT. We have detected a crossover. between two types of RI-curves with an essentially different behavior at small currents. On the basis of this crossover, we are able to map out the whole phase diagram for a Josephson junction. The position of the observed phase boundary did not agree with that expected from the original theory. However, the theory revised to take into account a finite accuracy of our voltage measurements (viz., the minimum voltage which we are able to detect), explains well the observed phase diagram. Our important conclusion is that the concept of dissipative phase transition (DPT) and superconductor-insulator transition (SIT) are not completely identical as assumed before. Both are accompanied by the sign change of the thermo resistance, which is traditionally considered as a signature of SIT. Thus any DPT is SIT, but not vice versa. We argue that the real signature

  8. Sensors for ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

    2014-11-21

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

  9. Sensors for ultra-fast silicon detectors

    International Nuclear Information System (INIS)

    Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

    2014-01-01

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

  10. Opportunities for Decay Counting of Environmental Radioisotopes Using Ultra-low-background Detection Systems

    Energy Technology Data Exchange (ETDEWEB)

    Runkle, Robert C.; Aalseth, Craig E.; Bailey, Vanessa L.; Bonicalzi, Ricco; Moran, James J.; Seifert, Allen; Warren, Glen A.

    2012-08-01

    Executive Summary We present results from a scoping study whose intent was to define challenge measurements to be pursued on the Ultra-Sensitive Nuclear Measurements Initiative. Potential challenge measurements using new radiation detection technology in the shallow underground laboratory that would have substantial impact in environmental science were the focus of this study.

  11. An oxide filled extended trench gate super junction MOSFET structure

    International Nuclear Information System (INIS)

    Cai-Lin, Wang; Jun, Sun

    2009-01-01

    This paper proposes an oxide filled extended trench gate super junction (SJ) MOSFET structure to meet the need of higher frequency power switches application. Compared with the conventional trench gate SJ MOSFET, new structure has the smaller input and output capacitances, and the remarkable improvements in the breakdown voltage, on-resistance and switching speed. Furthermore, the SJ in the new structure can be realized by the existing trench etching and shallow angle implantation, which offers more freedom to SJ MOSFET device design and fabrication. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiO{sub x}/Ti junctions

    Energy Technology Data Exchange (ETDEWEB)

    Guillaume, N.; Puyoo, E., E-mail: etienne.puyoo@insa-lyon.fr; Le Berre, M.; Albertini, D.; Baboux, N.; Chevalier, C.; Ayadi, K.; Grégoire, J.; Gautier, B.; Calmon, F. [Institut des Nanotechnologies de Lyon, Université de Lyon, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621 (France)

    2015-10-14

    We investigate the properties and characteristics of planar Ti/TiO{sub x}/Ti junctions, which consist of transverse TiO{sub x} lines drawn on Ti test patterns. Junctions are elaborated by means of local anodic oxidation using atomic force microscopy. An irreversible morphological transformation occurring in a reproducible manner is observed when these planar junctions are electrically stressed under ambient atmosphere. Structural and chemical analyses based on transmission electron microscopy techniques reveal the extension of the initial amorphous TiO{sub x} into a crystalline rutile phase. This irreversible transformation is proven to vanish completely if the electrical stress occurs under vacuum atmosphere. Finally, we carry out temperature dependent electrical measurements in order to elucidate their conduction mechanism: Schottky emission above an ultra-low potential barrier is assumed to dominate under vacuum atmosphere whereas ionic conduction seems to prevail in air.

  13. Deep levels induced by low energy B+ implantation into Ge-preamorphised silicon in correlation with end of range formation

    International Nuclear Information System (INIS)

    Benzohra, Mohamed; Olivie, Francois; Idrissi-Benzohra, Malika; Ketata, Kaouther; Ketata, Mohamed

    2002-01-01

    It is well established that low energy B + ion implantation into Ge- (or Si) implantation pre-amorphised silicon allows ultra-shallow p + n junctions formation. However, this process is known to generate defects such as dislocation loops, vacancies and interstitials which can act as vehicles to different mechanisms inducing electrically active levels into the silicon bulk. The junctions studied have been obtained using 3 keV/10 15 cm -2 B + implantation into Ge-implantation pre-amorphised substrates and into a reference crystalline substrate. Accurate measurements using deep level transient spectroscopy (DLTS) and isothermal transient capacitance ΔC(t,T) were performed to characterise these levels. Such knowledge is crucial to improve the device characteristics. In order to sweep the silicon band gap, various experimental conditions were considered. The analysis of DLTS spectra have first showed three deep levels associated to secondary induced defects. Their concentration profiles were derived from isothermal transient capacitance at depths up to 3.5 μm into the silicon bulk and allowed us to detect a new deep level. The evolution of such defect distribution in correlation with the technological steps is discussed. The end of range (EOR) defect influence on electrical activity of secondary induced defects in ultra-shallow p + n diodes is clearly demonstrated

  14. Measurement of Ultra-Short Solitary Electromagnetic Pulses

    Directory of Open Access Journals (Sweden)

    Eva Gescheidtova

    2004-01-01

    Full Text Available In connection with the events of the last few years and with the increased number of terrorist activities, the problem of identification and measurement of electromagnetic weapons or other systems impact occurred. Among these are also microwave sources, which can reach extensive peak power of up to Pmax = 100 MW. Solitary, in some cases several times repeated, impulses lasting from tp E <1, 60>ns, cause the destruction of semiconductor junctions. These days we can find scarcely no human activity, where semiconductor structures are not used. The problem of security support of the air traffic, transportation, computer nets, banks, national strategic data canter’s, and other applications crops up. Several types of system protection from the ultra-short electromagnetic pulses present itself, passive and active protection. The analysis of the possible measuring methods, convenient for the identification and measurement of the ultra-short solitary electromagnetic pulses in presented in this paper; some of the methods were chosen and used for practical measurement. This work is part of Research object MSM262200022 "Research of microelectronic systems".

  15. Linker-dependent Junction Formation Probability in Single-Molecule Junctions

    Energy Technology Data Exchange (ETDEWEB)

    Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

    2015-01-15

    We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

  16. Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

    Science.gov (United States)

    Niedzielski, Bethany Maria

    A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this

  17. Rapid shallow breathing

    Science.gov (United States)

    Tachypnea; Breathing - rapid and shallow; Fast shallow breathing; Respiratory rate - rapid and shallow ... Shallow, rapid breathing has many possible medical causes, including: Asthma Blood clot in an artery in the ...

  18. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  19. Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ray, Ashok; Nori, Rajashree; Bhatt, Piyush; Lodha, Saurabh; Pinto, Richard, E-mail: rpinto@ee.iitb.ac.in; Rao, Valipe Ramgopal [Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Jomard, François; Neumann-Spallart, Michael [Groupe d' Étude de la Matière Condensée, C.N.R.S./Université de Versailles-St.Quentin, 45, Avenue des États-Unis, 78035 Versailles Cedex (France)

    2014-11-01

    A plasma immersion ion implantation (PIII) process has been developed for realizing shallow doping profiles of phosphorus and boron in silicon using an in-house built dual chamber cluster tool. High Si etch rates observed in a 5% PH{sub 3} in H{sub 2} plasma have been ascribed to high concentration of H(α) radicals. Therefore, subsequent work was carried out with 5% PH{sub 3} in He, leading to much smaller etch rates. By optical emission spectroscopy, the radical species H(α), PH*{sub 2}, and PH* have been identified. The concentration of all three species increased with pressure. Also, ion concentrations increased with pressure as evidenced by Langmuir data, with a maximum occurring at 0.12 mbar. The duty cycle of pulsed DC bias has a significant bearing on both the implantation and the etching process as it controls the leakage of positive charge collected at the surface of the silicon wafer during pulse on-time generated primarily due to secondary electron emission. The P implant process was optimized for a duty cycle of 10% or less at a pressure of 0.12 mbar with implant times as low as 30 s. Secondary ion mass spectroscopy showed a P dopant depth of 145 nm after rapid thermal annealing (RTA) at 950 °C for 5 s, resulting in a sheet resistance of 77 Ω/◻. Si n{sup +}/p diodes fabricated with phosphorus implantation using optimized PIII and RTA conditions exhibit J{sub on}/J{sub off} > 10{sup 6} with an ideality factor of nearly 1.2. Using similar conditions, shallow doping profiles of B in silicon have also been realized.

  20. Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

    Science.gov (United States)

    Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

    2017-10-27

    Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

  1. Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Vera, E S; Loferski, J J; Spitzer, M; Schewchun, J

    1981-01-01

    The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.

  2. Systems and methods for advanced ultra-high-performance InP solar cells

    Science.gov (United States)

    Wanlass, Mark

    2017-03-07

    Systems and Methods for Advanced Ultra-High-Performance InP Solar Cells are provided. In one embodiment, an InP photovoltaic device comprises: a p-n junction absorber layer comprising at least one InP layer; a front surface confinement layer; and a back surface confinement layer; wherein either the front surface confinement layer or the back surface confinement layer forms part of a High-Low (HL) doping architecture; and wherein either the front surface confinement layer or the back surface confinement layer forms part of a heterointerface system architecture.

  3. Four-junction superconducting circuit

    Science.gov (United States)

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  4. Development of NbN Josephson junctions with TaxN semi-metal barrier; application to RSFQ circuits

    International Nuclear Information System (INIS)

    Setzu, R.

    2007-11-01

    This thesis research, brought to the development and optimization of SNS (Superconductor / Normal Metal / Superconductor) Josephson junctions with NbN electrodes and a high resistivity Ta x N barrier. We were able to point out Josephson oscillations for frequencies above 1 THz and operation temperatures up to 10 K, which constituted the original goal of the project. This property makes these junctions unique and well adapted for realizing ultra-fast RSFQ (Rapid Single Flux Quantum) logic circuits suitable for spatial telecommunications. We showed a good reproducibility of Ta x N film properties as a function of the sputtering parameters. The NbN/Ta x N/NbN tri-layers exhibit high critical temperature (16 K). The junctions showed a clear dependence of the R n I c product as a function of the partial nitrogen pressure inside the reactive plasma; the R n I c is the product between the junction critical current and its normal resistance, and indicates the upper limit Josephson frequency. We have also obtained some really high R n I c products, up to 3.74 mV at 4.2 K for critical current densities of about 15 kA/cm 2 . Junctions show the expected Josephson behaviors, respectively Fraunhofer diffraction and Shapiro steps. up to 14 K. This allows expecting good circuit operations in a relaxed cryogenics environment (with respect to the niobium circuits limited at 4.2 K). The junctions appear to be self-shunted. The SNOP junctions J c -temperature dependence has been fitted by using the long SNS junction model in the dirty limit, which gives a normal metal coherence length of about 3.8 nm at 4.2 K. We have finally studied a multilayer fabrication process, including a common ground plane and bias resistors, suitable for RSFQ logic basic circuits. To conclude we have been able to show the performance superiority of NbN/Ta x N/NbN junctions over the actual niobium junctions, as well as their interest for realizing compact RSFQ logic circuits. In fact these junctions do not

  5. Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

    Science.gov (United States)

    Shin, Sunhae; Rok Kim, Kyung

    2015-06-01

    In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

  6. Ballistic Graphene Josephson Junctions from the Short to the Long Junction Regimes.

    Science.gov (United States)

    Borzenets, I V; Amet, F; Ke, C T; Draelos, A W; Wei, M T; Seredinski, A; Watanabe, K; Taniguchi, T; Bomze, Y; Yamamoto, M; Tarucha, S; Finkelstein, G

    2016-12-02

    We investigate the critical current I_{C} of ballistic Josephson junctions made of encapsulated graphene-boron-nitride heterostructures. We observe a crossover from the short to the long junction regimes as the length of the device increases. In long ballistic junctions, I_{C} is found to scale as ∝exp(-k_{B}T/δE). The extracted energies δE are independent of the carrier density and proportional to the level spacing of the ballistic cavity. As T→0 the critical current of a long (or short) junction saturates at a level determined by the product of δE (or Δ) and the number of the junction's transversal modes.

  7. Equivalent Josephson junctions

    International Nuclear Information System (INIS)

    Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

  8. Work plan for ground water elevation data recorder/monitor well installation at Grand Junction, Colorado. Revision 1

    International Nuclear Information System (INIS)

    1994-08-01

    The purpose of this document is to describe the work that will be performed and the procedures that will be followed during installation of ground water monitor wells and ground water elevation data recorders (data loggers) at the Grand Junction, Colorado, Uranium Mill Tailings Remedial Action (UMTRA) Project site. The monitor wells and data loggers will be used to gather required time-dependent data to investigate the interaction between the shallow aquifer and the Colorado River

  9. Ferroelectric capped magnetization in multiferroic PZT/LSMO tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Ashok, E-mail: ashok553@nplindia.org; Shukla, A. K. [National Physical Laboratory (CSIR), Dr. K. S. Krishnan Road, New Delhi-110012 (India); Barrionuevo, D.; Ortega, N.; Katiyar, Ram S. [Department of Physics and Institute of Functional Nanomaterials, University of Puerto Rico, San Juan, Puerto Rico 00931-3343 (United States); Shannigrahi, Santiranjan [Institute of Materials Research and Engineering - IMRE, Agency for Science Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Scott, J. F. [Department of Chemistry and Department of Physics, University of St. Andrews, St. Andrews KY16 ST (United Kingdom)

    2015-03-30

    Self-poled ultra-thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) (5 and 7 nm) films have been grown by pulsed laser deposition technique on ferromagnetic La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (LSMO) (30 nm) to check the effect of polar capping on magnetization for ferroelectric tunnel junction devices. PZT/LSMO heterostructures with thick polar PZT (7 nm) capping show nearly 100% enhancement in magnetization compared with thin polar PZT (5 nm) films, probably due to excess hole transfer from the ferroelectric to the ferromagnetic layers. Core-level x-ray photoelectron spectroscopy studies revealed the presence of larger Mn 3s exchange splitting and higher Mn{sup 3+}/Mn{sup 4+} ion ratio in the LSMO with 7 nm polar capping.

  10. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  11. Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

    Science.gov (United States)

    Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

    2017-12-04

    High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

  12. Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.

    Science.gov (United States)

    Fu, Chaochao; Zhou, Xiangbiao; Wang, Yan; Xu, Peng; Xu, Ming; Wu, Dongping; Luo, Jun; Zhao, Chao; Zhang, Shi-Li

    2016-04-27

    The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. However, the effective Schottky barrier height (SBH) of the Schottky junction needs to be tuned to be lower than 100 meV in order to obtain a high driving current. In this paper, microwave annealing is employed to modify the effective SBH of NiSi on Si via boron or arsenic dopant segregation. The barrier height decreased from 0.4-0.7 eV to 0.2-0.1 eV for both conduction polarities by annealing below 400 °C. Compared with the required temperature in traditional rapid thermal annealing, the temperature demanded in microwave annealing is ~60 °C lower, and the mechanisms of this observation are briefly discussed. Microwave annealing is hence of high interest to future semiconductor processing owing to its unique capability of forming the metal/semiconductor contact at a remarkably lower temperature.

  13. Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

    Directory of Open Access Journals (Sweden)

    Weisheng Zhao

    2016-01-01

    Full Text Available Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS circuits. However, this device suffers from a number of failure issues, such as large process variation and tunneling barrier breakdown. The large process variation is an intrinsic issue for PMA-MTJ as it is based on the interfacial effects between ultra-thin films with few layers of atoms; the tunneling barrier breakdown is due to the requirement of an ultra-thin tunneling barrier (e.g., <1 nm to reduce the resistance area for the spin transfer torque switching in the nanopillar. These failure issues limit the research and development of STT-MRAM to widely achieve commercial products. In this paper, we give a full analysis of failure mechanisms for PMA-MTJ and present some eventual solutions from device fabrication to system level integration to optimize the failure issues.

  14. Josephson junction arrays

    International Nuclear Information System (INIS)

    Bindslev Hansen, J.; Lindelof, P.E.

    1985-01-01

    In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

  15. The significance of ultra-refracted surface gravity waves on sheltered coasts, with application to San Francisco Bay

    Science.gov (United States)

    Hanes, D.M.; Erikson, L.H.

    2013-01-01

    Ocean surface gravity waves propagating over shallow bathymetry undergo spatial modification of propagation direction and energy density, commonly due to refraction and shoaling. If the bathymetric variations are significant the waves can undergo changes in their direction of propagation (relative to deepwater) greater than 90° over relatively short spatial scales. We refer to this phenomenon as ultra-refraction. Ultra-refracted swell waves can have a powerful influence on coastal areas that otherwise appear to be sheltered from ocean waves. Through a numerical modeling investigation it is shown that San Francisco Bay, one of the earth's largest and most protected natural harbors, is vulnerable to ultra-refracted ocean waves, particularly southwest incident swell. The flux of wave energy into San Francisco Bay results from wave transformation due to the bathymetry and orientation of the large ebb tidal delta, and deep, narrow channel through the Golden Gate. For example, ultra-refracted swell waves play a critical role in the intermittent closure of the entrance to Crissy Field Marsh, a small restored tidal wetland located on the sheltered north-facing coast approximately 1.5 km east of the Golden Gate Bridge.

  16. Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

    NARCIS (Netherlands)

    Shi, L.; Sarubbi, F.; Nanver, L.K.; Kroth, U.; Gottwald, A.; Nihtianov, S.

    2010-01-01

    In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and

  17. Electronic thermometry in tunable tunnel junction

    Science.gov (United States)

    Maksymovych, Petro

    2016-03-15

    A tunable tunnel junction thermometry circuit includes a variable width tunnel junction between a test object and a probe. The junction width is varied and a change in thermovoltage across the junction with respect to the change in distance across the junction is determined. Also, a change in biased current with respect to a change in distance across the junction is determined. A temperature gradient across the junction is determined based on a mathematical relationship between the temperature gradient, the change in thermovoltage with respect to distance and the change in biased current with respect to distance. Thermovoltage may be measured by nullifying a thermoelectric tunneling current with an applied voltage supply level. A piezoelectric actuator may modulate the probe, and thus the junction width, to vary thermovoltage and biased current across the junction. Lock-in amplifiers measure the derivatives of the thermovoltage and biased current modulated by varying junction width.

  18. Dynamics of Josephson junction arrays

    International Nuclear Information System (INIS)

    Hadley, P.

    1989-01-01

    The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

  19. ULTRA-LIGHTWEIGHT CEMENT

    International Nuclear Information System (INIS)

    Fred Sabins

    2001-01-01

    The objective of this project is to develop an improved ultra-lightweight cement using ultra-lightweight hollow glass spheres (ULHS). Work reported herein addresses Task 1: Assess Ultra-Lightweight Cementing Issues, Task 2: Review Russian Ultra-Lightweight Cement Literature, Task 3: Test Ultra-Lightweight Cements, and Task 8: Develop Field ULHS Cement Blending and Mixing Techniques. Results reported this quarter include: preliminary findings from a literature review focusing on problems associated with ultra-lightweight cements; summary of pertinent information from Russian ultra-lightweight cement literature review; laboratory tests comparing ULHS slurries to foamed slurries and sodium silicate slurries for two different applications; and initial laboratory studies with ULHS in preparation for a field job

  20. Design and simulation of self-biased circulators in the ultra high frequency band

    International Nuclear Information System (INIS)

    Wang Jianwei; Geiler, Anton; Mistry, Perhaad; Kaeli, David R.; Harris, Vincent G.; Vittoria, Carmine

    2012-01-01

    Theoretical models were developed to design self-biased Y-junction circulators operating at ultra high frequency (UHF). The proposed circulator designs consist of insulating nanowires of yttrium iron garnet (YIG) embedded in high permittivity barium–strontium titanate (BSTO) substrates. A design with as many as 10 5 or greater wires may be considered in its entirety to determine the electromagnetic scattering S-parameters of a circulator design, thus helping to mitigate the computational limitations of the available finite element method (FEM) tools. The approach seeks to represent the nanowires and the BSTO substrate by an equivalent medium with effective properties inclusive of the average saturation magnetization, dynamic demagnetizing fields, and permittivity. The effective medium approach was validated in comparison with the FEM models. Using the proposed approach, a self-biased junction circulator consisting of YIG nanowires embedded in a BSTO substrate was designed and simulated in which the center frequency insertion loss was calculated to be as low as 0.16 dB with isolation of −42.3 dB at 1 GHz. The 20 dB bandwidth was calculated to be 50 MHz. These results suggest that practical self-biased circulators at the UHF band are feasible. - Highlights: ► Presented a self-biased Y-junction circulator topology on composite substrate with YIG nanowires and high permittivity BSTO. ► Developed an equivalent model to characterize the composite substrate. ► Designed a self-biased junction circulator consisting of YIG nanowires embedded in a BSTO substrate at 1 GHz.

  1. Fracture Mechanisms of Zirconium Diboride Ultra-High Temperature Ceramics under Pulse Loading

    Science.gov (United States)

    Skripnyak, Vladimir V.; Bragov, Anatolii M.; Skripnyak, Vladimir A.; Lomunov, Andrei K.; Skripnyak, Evgeniya G.; Vaganova, Irina K.

    2015-06-01

    Mechanisms of failure in ultra-high temperature ceramics (UHTC) based on zirconium diboride under pulse loading were studied experimentally by the method of SHPB and theoretically using the multiscale simulation method. The obtained experimental and numerical data are evidence of the quasi-brittle fracture character of nanostructured zirconium diboride ceramics under compression and tension at high strain rates and the room temperatures. Damage of nanostructured porous zirconium diboride -based UHTC can be formed under stress pulse amplitude below the Hugoniot elastic limit. Fracture of nanostructured ultra-high temperature ceramics under pulse and shock-wave loadings is provided by fast processes of intercrystalline brittle fracture and relatively slow processes of quasi-brittle failure via growth and coalescence of microcracks. A decrease of the shear strength can be caused by nano-voids clusters in vicinity of triple junctions between ceramic matrix grains and ultrafine-grained ceramics. This research was supported by grants from ``The Tomsk State University Academic D.I. Mendeleev Fund Program'' and also N. I. Lobachevski State University of Nizhny Novgorod (Grant of post graduate mobility).

  2. Tight junctions and human diseases.

    Science.gov (United States)

    Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

    2003-09-01

    Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

  3. A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

    International Nuclear Information System (INIS)

    Hadley, Austin; Ding, George X.

    2014-01-01

    Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans

  4. Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Paul M., E-mail: paul.dietrich@yahoo.de [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Glamsch, Stephan [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Ehlert, Christopher [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam (Germany); Lippitz, Andreas [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Kulak, Nora [Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Unger, Wolfgang E.S. [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany)

    2016-02-15

    Graphical abstract: - Highlights: • A synchrotron-based XPS method to analyze ultra-thin silane films is presented. • Specification and quantification of organic next to inorganic silicon is demonstrated. • Non-destructive chemical depth profiles of the silane monolayers were obtained. - Abstract: The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z{sub 95} of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) – inorganic (SiO{sub 2}/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS.

  5. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-01-01

    Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

  6. Increasing gap junctional coupling: a tool for dissecting the role of gap junctions

    DEFF Research Database (Denmark)

    Axelsen, Lene Nygaard; Haugan, Ketil; Stahlhut, Martin

    2007-01-01

    Much of our current knowledge about the physiological and pathophysiological role of gap junctions is based on experiments where coupling has been reduced by either chemical agents or genetic modification. This has brought evidence that gap junctions are important in many physiological processes....... In a number of cases, gap junctions have been implicated in the initiation and progress of disease, and experimental uncoupling has been used to investigate the exact role of coupling. The inverse approach, i.e., to increase coupling, has become possible in recent years and represents a new way of testing...... the role of gap junctions. The aim of this review is to summarize the current knowledge obtained with agents that selectively increase gap junctional intercellular coupling. Two approaches will be reviewed: increasing coupling by the use of antiarrhythmic peptide and its synthetic analogs...

  7. Do ultra-orphan medicinal products warrant ultra-high prices? A review

    Directory of Open Access Journals (Sweden)

    Picavet E

    2013-06-01

    Full Text Available Eline Picavet,1 David Cassiman,2 Steven Simoens1 1Department of Pharmaceutical and Pharmacological Sciences, KU Leuven, Leuven, Belgium; 2Department of Hepatology, University Hospital Leuven, Leuven, Belgium Abstract: Ultra-orphan medicinal products (ultra-OMPs are intended for the treatment, prevention, or diagnosis of ultra-rare diseases, ie, life-threatening or chronically debilitating diseases that affect less than one per 50,000 individuals. Recently, high prices for ultra-OMPs have given rise to debate on the sustainability and justification of these prices. The aim of this article is to review the international scientific literature on the pricing of ultra-OMPs and to provide an overview of the current knowledge on the drivers of ultra-OMP pricing. The pricing process of ultra-OMPs is a complex and nontransparent issue. Evidence in the literature seems to indicate that ultra-OMPs are priced according to rarity and what the manufacturer believes the market will bear. Additionally, there appears to be a trend between the price of an ultra-OMP and the number of available alternatives. Patients, third-party payers, and pharmaceutical companies could benefit from more transparent pricing strategies. With a view to containing health care costs, it is likely that cost-sharing strategies, such as performance-based risk sharing arrangements, will become increasingly more important. However, it is vital that any measures for price control are consistent with the intended goals of the incentives to promote the development of new OMPs. Ideally, a balance must be struck between attaining affordable prices for ultra-OMPs and securing a realistic return on investment for the pharmaceutical industry. Keywords: ultra-orphan medicinal product, ultra-rare disease, pricing

  8. Junction detection and pathway selection

    Science.gov (United States)

    Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

    1992-02-01

    The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

  9. Phase diagrams of particles with dissimilar patches: X-junctions and Y-junctions

    International Nuclear Information System (INIS)

    Tavares, J M; Teixeira, P I C

    2012-01-01

    We use Wertheim’s first-order perturbation theory to investigate the phase behaviour and the structure of coexisting fluid phases for a model of patchy particles with dissimilar patches (two patches of type A and f B patches of type B). A patch of type α = {A,B} can bond to a patch of type β = {A,B} in a volume v αβ , thereby decreasing the internal energy by ε αβ . We analyse the range of model parameters where AB bonds, or Y-junctions, are energetically disfavoured (ε AB AA /2) but entropically favoured (v AB ≫ v αα ), and BB bonds, or X-junctions, are energetically favoured (ε BB > 0). We show that, for low values of ε BB /ε AA , the phase diagram has three different regions: (i) close to the critical temperature a low-density liquid composed of long chains and rich in Y-junctions coexists with a vapour of chains; (ii) at intermediate temperatures there is coexistence between a vapour of short chains and a liquid of very long chains with X- and Y-junctions; (iii) at low temperatures an ideal gas coexists with a high-density liquid with all possible AA and BB bonds formed. It is also shown that in region (i) the liquid binodal is reentrant (its density decreases with decreasing temperature) for the lower values of ε BB /ε AA . The existence of these three regions is a consequence of the competition between the formation of X- and Y-junctions: X-junctions are energetically favoured and thus dominate at low temperatures, whereas Y-junctions are entropically favoured and dominate at higher temperatures. (paper)

  10. Common features of a vortex structure in long exponentially shaped Josephson junctions and Josephson junctions with inhomogeneities

    International Nuclear Information System (INIS)

    Boyadjiev, T.L.; Semerdjieva, E.G.; Shukrinov, Yu.M.

    2007-01-01

    We study the vortex structure in three different models of the long Josephson junction: the exponentially shaped Josephson junction and the Josephson junctions with the resistor and the shunt inhomogeneities in the barrier layer. For these three models the critical curves 'critical current-magnetic field' are numerically constructed. We develop the idea of the equivalence of the exponentially shaped Josephson junction and the rectangular junction with the distributed inhomogeneity and demonstrate that at some parameters of the shunt and the resistor inhomogeneities in the ends of the junction the corresponding critical curves are very close to the exponentially shaped one

  11. Characterization techniques for nano-electronics, with emphasis to electron microscopy. The role of the European Project ANNA

    Science.gov (United States)

    Armigliato, A.

    2008-07-01

    In the present and future CMOS technology, due to the ever shrinking geometries of the electronic devices, the availability of techniques capable of performing quantitative analyses of the relevant parameters (structural, chemical, mechanical) at a nanoscale is of a paramount importance. The influence of these features on the electrical performances of the nanodevices is a key issue for the nanoelectronics industry. In the recent years, a significant progress has been made in this field by a number of techniques, such as X-ray diffraction, in particular with the advent of synchrotron sources, ion-microbeam based Rutherford backscattering and channeling spectrometry, and micro Raman spectrometry. In addition, secondary ion mass spectrometry (SIMS) has achieved an important role in the determination of the dopant depth profile in ultra-shallow junctions (USJs) in silicon. However, the technique which features the ultimate spatial resolution (at the nanometer scale) is scanning transmission electron microscopy (STEM). In this presentation it will be reported on the nanoanalysis by STEM of two very important physical quantities which need to be controlled in the fabrication processes of nanodevices: the dopant profile in the USJs and the lattice strain that is generated in the Si electrically active regions of isolation structures by the different technological steps. The former quantity is investigated by the so-called Z-contrast high-angle annular dark field (HAADF-STEM) method, whereas the mechanical strain can be two-dimensionally mapped by the convergent beam electron diffraction (CBED-STEM) method. A spatial resolution lower than one nanometer and of a few nanometers can be achieved in the two cases, respectively. To keep the pace with the scientific and technological progress an increasingly wide array of analytical techniques is necessary; their complementary role in the solution of present and future characterization problems must be exploited. Presently

  12. Gas cluster ion beam assisted NiPt germano-silicide formation on SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Ozcan, Ahmet S., E-mail: asozcan@us.ibm.com [IBM Almaden Research Center, 650 Harry Road, San Jose, California 95120 (United States); Lavoie, Christian; Jordan-Sweet, Jean [IBM T. J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States); Alptekin, Emre; Zhu, Frank [IBM Semiconductor Research and Development Center, 2070 Route 52, Hopewell Junction, New York 12533 (United States); Leith, Allen; Pfeifer, Brian D.; LaRose, J. D.; Russell, N. M. [TEL Epion Inc., 900 Middlesex Turnpike, Bldg. 6, Billerica, Massachusetts 01821 (United States)

    2016-04-21

    We report the formation of very uniform and smooth Ni(Pt)Si on epitaxially grown SiGe using Si gas cluster ion beam treatment after metal-rich silicide formation. The gas cluster ion implantation process was optimized to infuse Si into the metal-rich silicide layer and lowered the NiSi nucleation temperature significantly according to in situ X-ray diffraction measurements. This novel method which leads to more uniform films can also be used to control silicide depth in ultra-shallow junctions, especially for high Ge containing devices, where silicidation is problematic as it leads to much rougher interfaces.

  13. Ischemic preconditioning enhances integrity of coronary endothelial tight junctions

    International Nuclear Information System (INIS)

    Li, Zhao; Jin, Zhu-Qiu

    2012-01-01

    Highlights: ► Cardiac tight junctions are present between coronary endothelial cells. ► Ischemic preconditioning preserves the structural and functional integrity of tight junctions. ► Myocardial edema is prevented in hearts subjected to ischemic preconditioning. ► Ischemic preconditioning enhances translocation of ZO-2 from cytosol to cytoskeleton. -- Abstract: Ischemic preconditioning (IPC) is one of the most effective procedures known to protect hearts against ischemia/reperfusion (IR) injury. Tight junction (TJ) barriers occur between coronary endothelial cells. TJs provide barrier function to maintain the homeostasis of the inner environment of tissues. However, the effect of IPC on the structure and function of cardiac TJs remains unknown. We tested the hypothesis that myocardial IR injury ruptures the structure of TJs and impairs endothelial permeability whereas IPC preserves the structural and functional integrity of TJs in the blood–heart barrier. Langendorff hearts from C57BL/6J mice were prepared and perfused with Krebs–Henseleit buffer. Cardiac function, creatine kinase release, and myocardial edema were measured. Cardiac TJ function was evaluated by measuring Evans blue-conjugated albumin (EBA) content in the extravascular compartment of hearts. Expression and translocation of zonula occludens (ZO)-2 in IR and IPC hearts were detected with Western blot. A subset of hearts was processed for the observation of ultra-structure of cardiac TJs with transmission electron microscopy. There were clear TJs between coronary endothelial cells of mouse hearts. IR caused the collapse of TJs whereas IPC sustained the structure of TJs. IR increased extravascular EBA content in the heart and myocardial edema but decreased the expression of ZO-2 in the cytoskeleton. IPC maintained the structure of TJs. Cardiac EBA content and edema were reduced in IPC hearts. IPC enhanced the translocation of ZO-2 from cytosol to cytoskeleton. In conclusion, TJs occur in

  14. Ischemic preconditioning enhances integrity of coronary endothelial tight junctions

    Energy Technology Data Exchange (ETDEWEB)

    Li, Zhao [Department of Pharmaceutical Sciences, College of Pharmacy, South Dakota State University, Brookings, SD 57007 (United States); Jin, Zhu-Qiu, E-mail: zhu-qiu.jin@sdstate.edu [Department of Pharmaceutical Sciences, College of Pharmacy, South Dakota State University, Brookings, SD 57007 (United States)

    2012-08-31

    Highlights: Black-Right-Pointing-Pointer Cardiac tight junctions are present between coronary endothelial cells. Black-Right-Pointing-Pointer Ischemic preconditioning preserves the structural and functional integrity of tight junctions. Black-Right-Pointing-Pointer Myocardial edema is prevented in hearts subjected to ischemic preconditioning. Black-Right-Pointing-Pointer Ischemic preconditioning enhances translocation of ZO-2 from cytosol to cytoskeleton. -- Abstract: Ischemic preconditioning (IPC) is one of the most effective procedures known to protect hearts against ischemia/reperfusion (IR) injury. Tight junction (TJ) barriers occur between coronary endothelial cells. TJs provide barrier function to maintain the homeostasis of the inner environment of tissues. However, the effect of IPC on the structure and function of cardiac TJs remains unknown. We tested the hypothesis that myocardial IR injury ruptures the structure of TJs and impairs endothelial permeability whereas IPC preserves the structural and functional integrity of TJs in the blood-heart barrier. Langendorff hearts from C57BL/6J mice were prepared and perfused with Krebs-Henseleit buffer. Cardiac function, creatine kinase release, and myocardial edema were measured. Cardiac TJ function was evaluated by measuring Evans blue-conjugated albumin (EBA) content in the extravascular compartment of hearts. Expression and translocation of zonula occludens (ZO)-2 in IR and IPC hearts were detected with Western blot. A subset of hearts was processed for the observation of ultra-structure of cardiac TJs with transmission electron microscopy. There were clear TJs between coronary endothelial cells of mouse hearts. IR caused the collapse of TJs whereas IPC sustained the structure of TJs. IR increased extravascular EBA content in the heart and myocardial edema but decreased the expression of ZO-2 in the cytoskeleton. IPC maintained the structure of TJs. Cardiac EBA content and edema were reduced in IPC hearts. IPC

  15. Behavior of tight-junction, adherens-junction and cell polarity proteins during HNF-4α-induced epithelial polarization

    International Nuclear Information System (INIS)

    Satohisa, Seiro; Chiba, Hideki; Osanai, Makoto; Ohno, Shigeo; Kojima, Takashi; Saito, Tsuyoshi; Sawada, Norimasa

    2005-01-01

    We previously reported that expression of tight-junction molecules occludin, claudin-6 and claudin-7, as well as establishment of epithelial polarity, was triggered in mouse F9 cells expressing hepatocyte nuclear factor (HNF)-4α [H. Chiba, T. Gotoh, T. Kojima, S. Satohisa, K. Kikuchi, M. Osanai, N. Sawada. Hepatocyte nuclear factor (HNF)-4α triggers formation of functional tight junctions and establishment of polarized epithelial morphology in F9 embryonal carcinoma cells, Exp. Cell Res. 286 (2003) 288-297]. Using these cells, we examined in the present study behavior of tight-junction, adherens-junction and cell polarity proteins and elucidated the molecular mechanism behind HNF-4α-initiated junction formation and epithelial polarization. We herein show that not only ZO-1 and ZO-2, but also ZO-3, junctional adhesion molecule (JAM)-B, JAM-C and cell polarity proteins PAR-3, PAR-6 and atypical protein kinase C (aPKC) accumulate at primordial adherens junctions in undifferentiated F9 cells. In contrast, CRB3, Pals1 and PATJ appeared to exhibit distinct subcellular localization in immature cells. Induced expression of HNF-4α led to translocation of these tight-junction and cell polarity proteins to beltlike tight junctions, where occludin, claudin-6 and claudin-7 were assembled, in differentiated cells. Interestingly, PAR-6, aPKC, CRB3 and Pals1, but not PAR-3 or PATJ, were also concentrated on the apical membranes in differentiated cells. These findings indicate that HNF-4α provokes not only expression of tight-junction adhesion molecules, but also modulation of subcellular distribution of junction and cell polarity proteins, resulting in junction formation and epithelial polarization

  16. Flexible 2D layered material junctions

    Science.gov (United States)

    Balabai, R.; Solomenko, A.

    2018-03-01

    Within the framework of the methods of the electron density functional and the ab initio pseudopotential, we have obtained the valence electron density spatial distribution, the densities of electron states, the widths of band gaps, the charges on combined regions, and the Coulomb potentials for graphene-based flexible 2D layered junctions, using author program complex. It is determined that the bending of the 2D layered junctions on the angle α leads to changes in the electronic properties of these junctions. In the graphene/graphane junction, there is clear charge redistribution with different signs in the regions of junctions. The presence in the heterojunctions of charge regions with different signs leads to the formation of potential barriers. The greatest potential jump is in the graphene/fluorographene junction. The greatest value of the band gap width is in the graphene/graphane junction.

  17. Calibration of an ultra-low-background proportional counter for measuring 37Ar

    International Nuclear Information System (INIS)

    Seifert, A.; Aalseth, C. E.; Bonicalzi, R. M.; Bowyer, T. W.; Day, A. R.; Fuller, E. S.; Haas, D. A.; Hayes, J. C.; Hoppe, E. W.; Humble, P. H.; Keillor, M. E.; LaFerriere, B. D.; Mace, E. K.; McIntyre, J. I.; Merriman, J. H.; Miley, H. S.; Myers, A. W.; Orrell, J. L.; Overman, C. T.; Panisko, M. E.

    2013-01-01

    An ultra-low-background proportional counter design has been developed at Pacific Northwest National Laboratory (PNNL) using clean materials, primarily electro-chemically-purified copper. This detector, along with an ultra-low-background counting system (ULBCS), was developed to complement a new shallow underground laboratory (30 meters water-equivalent) at PNNL. The ULBCS design includes passive neutron and gamma shielding, along with an active cosmic-veto system. This system provides a capability for making ultra-sensitive measurements to support applications like age-dating soil hydrocarbons with 14 C/ 3 H, age-dating of groundwater with 39 Ar, and soil-gas assay for 37 Ar to support On-Site Inspection (OSI). On-Site Inspection is a key component of the verification regime for the Comprehensive Nuclear-Test-Ban Treaty (CTBT). Measurements of radionuclides created by an underground nuclear explosion are valuable signatures of a Treaty violation. For OSI, the 35-day half-life of 37 Ar, produced from neutron interactions with calcium in soil, provides both high specific activity and sufficient time for inspection before decay limits sensitivity. This work describes the calibration techniques and analysis methods developed to enable quantitative measurements of 37 Ar samples over a broad range of proportional counter operating pressures. These efforts, along with parallel work in progress on gas chemistry separation, are expected to provide a significant new capability for 37 Ar soil gas background studies

  18. Ultra low field MR imaging of cervical spine involvement in rheumatoid arthritis

    Energy Technology Data Exchange (ETDEWEB)

    Fagerlund, M.; Bjoernebrink, J.; Ekelund, L.; Toolanen, G. (Umeaa Univ. Hospital (Sweden). Depts. of Diagnostic Radiology and Orthopedic Surgery)

    1992-03-01

    In a study of 30 patients with longstanding rheumatoid arthritis the diagnostic usefulness of ultra low field MR equipment was analyzed in assessing lesions of the craniocervical junction. It was found that at 0.04 T all the examinations were diagnostic and that in combination with plain radiography the diagnostic information obtained was valuable in further planning of the treatment strategies. The neurologic findings were related to the degree and severity of atlantoaxial luxation, either horizontal or vertical, and to the periodontoid pannus formation. The correlation between the degree of cord compression shown with MR imaging and the clinical symptoms, especially long tract symptoms, was poor. The only correlating factor was the duration of the disease. (orig.).

  19. The Dissolution of Double Holliday Junctions

    DEFF Research Database (Denmark)

    Bizard, Anna H; Hickson, Ian D

    2014-01-01

    as "double Holliday junction dissolution." This reaction requires the cooperative action of a so-called "dissolvasome" comprising a Holliday junction branch migration enzyme (Sgs1/BLM RecQ helicase) and a type IA topoisomerase (Top3/TopoIIIα) in complex with its OB (oligonucleotide/oligosaccharide binding......Double Holliday junctions (dHJS) are important intermediates of homologous recombination. The separate junctions can each be cleaved by DNA structure-selective endonucleases known as Holliday junction resolvases. Alternatively, double Holliday junctions can be processed by a reaction known......) fold containing accessory factor (Rmi1). This review details our current knowledge of the dissolution process and the players involved in catalyzing this mechanistically complex means of completing homologous recombination reactions....

  20. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  1. Damage accumulation and dopant migration during shallow As and Sb implantation into Si

    Energy Technology Data Exchange (ETDEWEB)

    Werner, M.; Berg, J.A. van den E-mail: j.a.vandenberg@salford.ac.uk; Armour, D.G.; Vandervorst, W.; Collart, E.H.J.; Goldberg, R.D.; Bailey, P.; Noakes, T.C.Q

    2004-02-01

    The damage evolution and concomitant dopant redistribution as a function of ion fluence during ultra shallow, heavy ion implants into Si have been investigated using medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). These studies involved As and Sb ions implanted at room temperature, at energies of 2.5 and 2 keV to doses from 3 x 10{sup 13} to 5 x 10{sup 15} cm{sup -2}. MEIS is capable of detecting both the displaced atom and implant profiles with sub-nanometre depth resolution. These studies show that for doses up to 1 x 10{sup 14} cm{sup -2} (at which an amorphous layer is formed) the damage build up does not follow the energy deposition function. Instead it proceeds through the initial formation of a {approx}4 nm wide amorphous layer immediately under the oxide, that grows inwards into the bulk with increasing dose. This behaviour is explained in terms of the migration of some of the interstitials produced along the length of the collision cascade to the oxide or amorphous/crystal Si interface, where their trapping nucleates the growth of a shallow amorphous layer and the subsequent planar growth inwards of the damage layer. Although for doses {>=}4 x 10{sup 14} cm{sup -2} the As depth profiles agreed well with TRIM calculations, for lower doses As was observed to have a shallower profile, {approx}2 nm nearer to the surface. This behaviour is related the growth of the amorphous layer and ascribed to the movement of As into the near-surface amorphous layer (probably mediated by point defect migration) in which the larger dopant is accommodated more easily. SIMS studies have confirmed this dopant segregation effect. Shallow Sb implants also exhibit this novel dopant movement effect for low doses in combination with a damage evolution similar to As.

  2. Damage accumulation and dopant migration during shallow As and Sb implantation into Si

    International Nuclear Information System (INIS)

    Werner, M.; Berg, J.A. van den; Armour, D.G.; Vandervorst, W.; Collart, E.H.J.; Goldberg, R.D.; Bailey, P.; Noakes, T.C.Q.

    2004-01-01

    The damage evolution and concomitant dopant redistribution as a function of ion fluence during ultra shallow, heavy ion implants into Si have been investigated using medium energy ion scattering (MEIS) and secondary ion mass spectrometry (SIMS). These studies involved As and Sb ions implanted at room temperature, at energies of 2.5 and 2 keV to doses from 3 x 10 13 to 5 x 10 15 cm -2 . MEIS is capable of detecting both the displaced atom and implant profiles with sub-nanometre depth resolution. These studies show that for doses up to 1 x 10 14 cm -2 (at which an amorphous layer is formed) the damage build up does not follow the energy deposition function. Instead it proceeds through the initial formation of a ∼4 nm wide amorphous layer immediately under the oxide, that grows inwards into the bulk with increasing dose. This behaviour is explained in terms of the migration of some of the interstitials produced along the length of the collision cascade to the oxide or amorphous/crystal Si interface, where their trapping nucleates the growth of a shallow amorphous layer and the subsequent planar growth inwards of the damage layer. Although for doses ≥4 x 10 14 cm -2 the As depth profiles agreed well with TRIM calculations, for lower doses As was observed to have a shallower profile, ∼2 nm nearer to the surface. This behaviour is related the growth of the amorphous layer and ascribed to the movement of As into the near-surface amorphous layer (probably mediated by point defect migration) in which the larger dopant is accommodated more easily. SIMS studies have confirmed this dopant segregation effect. Shallow Sb implants also exhibit this novel dopant movement effect for low doses in combination with a damage evolution similar to As

  3. Molecular electronic junction transport

    DEFF Research Database (Denmark)

    Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

    2012-01-01

    Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

  4. Gap junctions and motor behavior

    DEFF Research Database (Denmark)

    Kiehn, Ole; Tresch, Matthew C.

    2002-01-01

    The production of any motor behavior requires coordinated activity in motor neurons and premotor networks. In vertebrates, this coordination is often assumed to take place through chemical synapses. Here we review recent data suggesting that electrical gap-junction coupling plays an important role...... in coordinating and generating motor outputs in embryonic and early postnatal life. Considering the recent demonstration of a prevalent expression of gap-junction proteins and gap-junction structures in the adult mammalian spinal cord, we suggest that neuronal gap-junction coupling might also contribute...... to the production of motor behavior in adult mammals....

  5. Ferromagnetic Josephson Junctions for Cryogenic Memory

    Science.gov (United States)

    Niedzielski, Bethany M.; Gingrich, Eric C.; Khasawneh, Mazin A.; Loloee, Reza; Pratt, William P., Jr.; Birge, Norman O.

    2015-03-01

    Josephson junctions containing ferromagnetic materials are of interest for both scientific and technological purposes. In principle, either the amplitude of the critical current or superconducting phase shift across the junction can be controlled by the relative magnetization directions of the ferromagnetic layers in the junction. Our approach concentrates on phase control utilizing two junctions in a SQUID geometry. We will report on efforts to control the phase of junctions carrying either spin-singlet or spin-triplet supercurrent for cryogenic memory applications. Supported by Northorp Grumman Corporation and by IARPA under SPAWAR Contract N66001-12-C-2017.

  6. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  7. Seismicity and crustal structure at the Mendocino triple junction, Northern California

    Energy Technology Data Exchange (ETDEWEB)

    Dicke, M.

    1998-12-01

    A high level of seismicity at the Mendocino triple junction in Northern California reflects the complex active tectonics associated with the junction of the Pacific, North America, and Gorda plates. To investigate seismicity patterns and crustal structure, 6193 earthquakes recorded by the Northern California Seismic Network (NCSN) are relocated using a one-dimensional crustal velocity model. A near vertical truncation of the intense seismic activity offshore Cape Mendocino follows the strike of the Mattole Canyon fault and is interpreted to define the Pacific plate boundary. Seismicity along this boundary displays a double seismogenic layer that is attributed to interplate activity with the North America plate and Gorda plate. The interpretation of the shallow seismogenic zone as the North America - Pacific plate boundary implies that the Mendocino triple junction is situated offshore at present. Seismicity patterns and focal mechanisms for events located within the subducting Gorda pl ate are consistent with internal deformation on NE-SW and NW-SE trending rupture planes in response to north-south compression. Seismic sections indicate that the top of the Gorda plate locates at a depth of about 18 Km beneath Cape Mendocino and dips gently east-and southward. Earthquakes that are located in the Wadati-Benioff zone east of 236{sup o}E show a change to an extensional stress regime indicative of a slab pull force. This slab pull force and scattered seismicity within the contractional forearc region of the Cascadia subduction zone suggest that the subducting Gorda plate and the overriding North America plate are strongly coupled. The 1992 Cape Mendocino thrust earthquake is believed to have ruptured a blind thrust fault in the forearc region, suggesting that strain is accumulating that must ultimately be released in a potential M 8+ subduction earthquake.

  8. Sun Ultra 5

    CERN Multimedia

    1998-01-01

    The Sun Ultra 5 is a 64-bit personal computer based on the UltraSPARC microprocessor line at a low price. The Ultra 5 has been declined in several variants: thus, some models have a processor with less cache memory to further decrease the price of the computer.

  9. Atomic-scaled characterization of graphene PN junctions

    Science.gov (United States)

    Zhou, Xiaodong; Wang, Dennis; Dadgar, Ali; Agnihotri, Pratik; Lee, Ji Ung; Reuter, Mark C.; Ross, Frances M.; Pasupathy, Abhay N.

    Graphene p-n junctions are essential devices for studying relativistic Klein tunneling and the Veselago lensing effect in graphene. We have successfully fabricated graphene p-n junctions using both lithographically pre-patterned substrates and the stacking of vertical heterostructures. We then use our 4-probe STM system to characterize the junctions. The ability to carry out scanning electron microscopy (SEM) in our STM instrument is essential for us to locate and measure the junction interface. We obtain both the topography and dI/dV spectra at the junction area, from which we track the shift of the graphene chemical potential with position across the junction interface. This allows us to directly measure the spatial width and roughness of the junction and its potential barrier height. We will compare the junction properties of devices fabricated by the aforementioned two methods and discuss their effects on the performance as a Veselago lens.

  10. Stability of large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, Hylke B.; Kronemeijer, Auke J.; Harkema, Jan; van Hal, Paul A.; Smits, Edsger C. P.; de Leeuw, Dago M.; Blom, Paul W. M.

    The stability of molecular junctions is crucial for any application of molecular electronics. Degradation of molecular junctions when exposed to ambient conditions is regularly observed. In this report the stability of large-area molecular junctions under ambient conditions for more than two years

  11. Superconducting flux qubits with π-junctions

    International Nuclear Information System (INIS)

    Shcherbakova, Anastasia

    2014-01-01

    In this thesis, we present a fabrication technology of Al/AlO x /Al Josephson junctions on Nb pads. The described technology gives the possibility of combining a variety of Nb-based superconducting circuits, like pi-junction phase-shifters with sub-micron Al/AlO x /Al junctions. Using this approach, we fabricated hybrid Nb/Al flux qubits with and without the SFS-junctions and studied dispersive magnetic field response of these qubits as well as their spectroscopy characteristics.

  12. Resonance Transport of Graphene Nanoribbon T-Shaped Junctions

    International Nuclear Information System (INIS)

    Xiao-Lan, Kong; Yong-Jian, Xiong

    2010-01-01

    We investigate the transport properties of T-shaped junctions composed of armchair graphene nanoribbons of different widths. Three types of junction geometries are considered. The junction conductance strongly depends on the atomic features of the junction geometry. When the shoulders of the junction have zigzag type edges, sharp conductance resonances usually appear in the low energy region around the Dirac point, and a conductance gap emerges. When the shoulders of the junction have armchair type edges, the conductance resonance behavior is weakened significantly, and the metal-metal-metal junction structures show semimetallic behaviors. The contact resistance also changes notably due to the various interface geometries of the junction

  13. Josephson junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Wild, Georg Hermann

    2012-01-01

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  14. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  15. Electron optics with ballistic graphene junctions

    Science.gov (United States)

    Chen, Shaowen

    Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

  16. Peltier cooling in molecular junctions

    Science.gov (United States)

    Cui, Longji; Miao, Ruijiao; Wang, Kun; Thompson, Dakotah; Zotti, Linda Angela; Cuevas, Juan Carlos; Meyhofer, Edgar; Reddy, Pramod

    2018-02-01

    The study of thermoelectricity in molecular junctions is of fundamental interest for the development of various technologies including cooling (refrigeration) and heat-to-electricity conversion1-4. Recent experimental progress in probing the thermopower (Seebeck effect) of molecular junctions5-9 has enabled studies of the relationship between thermoelectricity and molecular structure10,11. However, observations of Peltier cooling in molecular junctions—a critical step for establishing molecular-based refrigeration—have remained inaccessible. Here, we report direct experimental observations of Peltier cooling in molecular junctions. By integrating conducting-probe atomic force microscopy12,13 with custom-fabricated picowatt-resolution calorimetric microdevices, we created an experimental platform that enables the unified characterization of electrical, thermoelectric and energy dissipation characteristics of molecular junctions. Using this platform, we studied gold junctions with prototypical molecules (Au-biphenyl-4,4'-dithiol-Au, Au-terphenyl-4,4''-dithiol-Au and Au-4,4'-bipyridine-Au) and revealed the relationship between heating or cooling and charge transmission characteristics. Our experimental conclusions are supported by self-energy-corrected density functional theory calculations. We expect these advances to stimulate studies of both thermal and thermoelectric transport in molecular junctions where the possibility of extraordinarily efficient energy conversion has been theoretically predicted2-4,14.

  17. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

  18. Combined evaluation of grazing incidence X-ray fluorescence and X-ray reflectivity data for improved profiling of ultra-shallow depth distributions

    NARCIS (Netherlands)

    Ingerle, D.; Meirer, F.; Pepponi, G.; Demenev, E.; Giubertoni, D.; Wobrauschek, P.; Streli, C.

    2014-01-01

    The continuous downscaling of the process size for semiconductor devices pushes the junction depths and consequentially the implantation depths to the top few nanometers of the Si substrate. This motivates the need for sensitive methods capable of analyzing dopant distribution, total dose and

  19. Geodynamical simulation of the RRF triple junction

    Science.gov (United States)

    Wang, Z.; Wei, D.; Liu, M.; Shi, Y.; Wang, S.

    2017-12-01

    Triple junction is the point at which three plate boundaries meet. Three plates at the triple junction form a complex geological tectonics, which is a natural laboratory to study the interactions of plates. This work studies a special triple junction, the oceanic transform fault intersects the collinear ridges with different-spreading rates, which is free of influence of ridge-transform faults and nearby hotspots. First, we build 3-D numerical model of this triple junction used to calculate the stead-state velocity and temperature fields resulting from advective and conductive heat transfer. We discuss in detail the influence of the velocity and temperature fields of the triple junction from viscosity, spreading rate of the ridge. The two sides of the oceanic transform fault are different sensitivities to the two factors. And, the influence of the velocity mainly occurs within 200km of the triple junction. Then, we modify the model by adding a ridge-transform fault to above model and directly use the velocity structure of the Macquarie triple junction. The simulation results show that the temperature at both sides of the oceanic transform fault decreases gradually from the triple junction, but the temperature difference between the two sides is a constant about 200°. And, there is little effect of upwelling velocity away from the triple junction 100km. The model results are compared with observational data. The heat flux and thermal topography along the oceanic transform fault of this model are consistent with the observed data of the Macquarie triple junction. The earthquakes are strike slip distributed along the oceanic transform fault. Their depths are also consistent with the zone of maximum shear stress. This work can help us to understand the interactions of plates of triple junctions and help us with the foundation for the future study of triple junctions.

  20. Loss models for long Josephson junctions

    DEFF Research Database (Denmark)

    Olsen, O. H.; Samuelsen, Mogens Rugholm

    1984-01-01

    A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement.......A general model for loss mechanisms in long Josephson junctions is presented. An expression for the zero-field step is found for a junction of overlap type by means of a perturbation method. Comparison between analytic solution and perturbation result shows good agreement....

  1. Dynamics of the Josephson multi-junction system with junctions characterized by non-sinusoidal current - phase relationship

    International Nuclear Information System (INIS)

    Abal'osheva, I.; Lewandowski, S.J.

    2004-01-01

    It is shown that the inclusion of junctions characterized by non-sinusoidal current - phase relationship in the systems composed of multiple Josephson junctions - results in the appearance of additional system phase states. Numerical simulations and stability considerations confirm that those phase states can be realized in practice. Moreover, spontaneous formation of the grain boundary junctions in high-T c superconductors with non-trivial current-phase relations due to the d-wave symmetry of the order parameter is probable. Switching between the phase states of multiple grain boundary junction systems can lead to additional 1/f noise in high-T c superconductors. (author)

  2. Theoretical and experimental investigations on synchronization in many-junction arrays of HTSC Josephson junctions. Final report

    International Nuclear Information System (INIS)

    Seidel, P.; Heinz, E.; Pfuch, A.; Machalett, F.; Krech, W.; Basler, M.

    1996-06-01

    Different many-junction arrays of Josephson junctions were studied theoretically to analyse the mechanisms of synchronization, the influence of internal and external parameters and the maximal allowed spread of parameters for the single junctions. Concepts to realize arrays using standard high-T c superconductor technology were created, e.g. the new arrangement of multijunction superconducting loops (MSL). First experimental results show the relevance of this concept. Intrinsic one-dimensional arrays in thin film technology were prepared as mesas out of Bi or Tl 2212 films. to characterize HTSC Josephson junctions methods based on the analysis of microwave-induced steps were developed. (orig.) [de

  3. Single P-N junction tandem photovoltaic device

    Science.gov (United States)

    Walukiewicz, Wladyslaw [Kensington, CA; Ager, III, Joel W.; Yu, Kin Man [Lafayette, CA

    2011-10-18

    A single P-N junction solar cell is provided having two depletion regions for charge separation while allowing the electrons and holes to recombine such that the voltages associated with both depletion regions of the solar cell will add together. The single p-n junction solar cell includes an alloy of either InGaN or InAlN formed on one side of the P-N junction with Si formed on the other side in order to produce characteristics of a two junction (2J) tandem solar cell through only a single P-N junction. A single P-N junction solar cell having tandem solar cell characteristics will achieve power conversion efficiencies exceeding 30%.

  4. The anatomical locus of T-junction processing.

    Science.gov (United States)

    Schirillo, James A

    2009-07-01

    Inhomogeneous surrounds can produce either asymmetrical or symmetrical increment/decrement induction by orienting T-junctions to selectively group a test patch with surrounding regions [Melfi, T., & Schirillo, J. (2000). T-junctions in inhomogeneous surrounds. Vision Research, 40, 3735-3741]. The current experiments aimed to determine where T-junctions are processed by presenting each eye with a different image so that T-junctions exist only in the fused percept. Only minor differences were found between retinal and cortical versus cortical-only conditions, indicating that T-junctions are processed cortically.

  5. Mixing in T-junctions

    NARCIS (Netherlands)

    Kok, Jacobus B.W.; van der Wal, S.

    1996-01-01

    The transport processes that are involved in the mixing of two gases in a T-junction mixer are investigated. The turbulent flow field is calculated for the T-junction with the k- turbulence model by FLOW3D. In the mathematical model the transport of species is described with a mixture fraction

  6. Scaling Projections on Spin-Transfer Torque Magnetic Tunnel Junctions

    Science.gov (United States)

    Das, Debasis; Tulapurkar, Ashwin; Muralidharan, Bhaskaran

    2018-02-01

    We investigate scaling of technologically relevant magnetic tunnel junction devices in the trilayer and pentalayer configurations by varying the cross-sectional area along the transverse direction using the non-equilibrium Green's function spin transport formalism. We study the geometry dependence by considering square and circular cross-sections. As the transverse dimension in each case reduces, we demonstrate that the transverse mode energy profile plays a major role in the resistance-area product. Both types of devices show constant tunnel magnetoresistance at larger cross-sectional areas but achieve ultra-high magnetoresistance at small cross-sectional areas, while maintaining low resistance-area products. We notice that although the critical switching voltage for switching the magnetization of the free layer nanomagnet in the trilayer case remains constant at larger areas, it needs more energy to switch at smaller areas. In the pentalayer case, we observe an oscillatory behavior at smaller areas as a result of double barrier tunneling. We also describe how switching characteristics of both kinds of devices are affected by the scaling.

  7. Effect of junction configurations on microdroplet formation in a T-junction microchannel

    Science.gov (United States)

    Lih, F. L.; Miao, J. M.

    2015-03-01

    This study investigates the dynamic formation process of water microdroplets in a silicon oil flow in a T-junction microchannel. Segmented water microdroplets are formed at the junction when the water flow is perpendicularly injected into the silicon oil flow in a straight rectangular microchannel. This study further presents the effects of the water flow inlet geometry on hydrodynamic characteristics of water microdroplet formation. A numerical multiphase volume of fluid (VOF) scheme is coupled to solve the unsteady three-dimensional laminar Navier-Stokes equations to depict the droplet formation phenomena at the junction. Predicted results on the length and generated frequency of the microdroplets agree well with experimental results in a T-junction microchannel with straight and flat inlets (the base model) for both fluid flows. Empirical correlations are reported between the volumetric flow ratio and the dimensionless microdroplet length or dimensionless frequency of droplet generation at a fixed capillary number of 4.7 · 10-3. The results of this study indicate a reduction in the droplet length of approximately 21% if the straight inlet for the water flow is modified to a downstream sudden contraction inlet for the water flow.

  8. Poster - Thur Eve - 57: Craniospinal irradiation with jagged-junction IMRT approach without beam edge matching for field junctions.

    Science.gov (United States)

    Cao, F; Ramaseshan, R; Corns, R; Harrop, S; Nuraney, N; Steiner, P; Aldridge, S; Liu, M; Carolan, H; Agranovich, A; Karva, A

    2012-07-01

    Craniospinal irradiation were traditionally treated the central nervous system using two or three adjacent field sets. A intensity-modulated radiotherapy (IMRT) plan (Jagged-Junction IMRT) which overcomes problems associated with field junctions and beam edge matching, improves planning and treatment setup efficiencies with homogenous target dose distribution was developed. Jagged-Junction IMRT was retrospectively planned on three patients with prescription of 36 Gy in 20 fractions and compared to conventional treatment plans. Planning target volume (PTV) included the whole brain and spinal canal to the S3 vertebral level. The plan employed three field sets, each with a unique isocentre. One field set with seven fields treated the cranium. Two field sets treated the spine, each set using three fields. Fields from adjacent sets were overlapped and the optimization process smoothly integrated the dose inside the overlapped junction. For the Jagged-Junction IMRT plans vs conventional technique, average homogeneity index equaled 0.08±0.01 vs 0.12±0.02, and conformity number equaled 0.79±0.01 vs 0.47±0.12. The 95% isodose surface covered (99.5±0.3)% of the PTV vs (98.1±2.0)%. Both Jagged-Junction IMRT plans and the conventional plans had good sparing of the organs at risk. Jagged-Junction IMRT planning provided good dose homogeneity and conformity to the target while maintaining a low dose to the organs at risk. Jagged-Junction IMRT optimization smoothly distributed dose in the junction between field sets. Since there was no beam matching, this treatment technique is less likely to produce hot or cold spots at the junction in contrast to conventional techniques. © 2012 American Association of Physicists in Medicine.

  9. Limitations of shallow nets approximation.

    Science.gov (United States)

    Lin, Shao-Bo

    2017-10-01

    In this paper, we aim at analyzing the approximation abilities of shallow networks in reproducing kernel Hilbert spaces (RKHSs). We prove that there is a probability measure such that the achievable lower bound for approximating by shallow nets can be realized for all functions in balls of reproducing kernel Hilbert space with high probability, which is different with the classical minimax approximation error estimates. This result together with the existing approximation results for deep nets shows the limitations for shallow nets and provides a theoretical explanation on why deep nets perform better than shallow nets. Copyright © 2017 Elsevier Ltd. All rights reserved.

  10. Fundamentals of Shallow Water Acoustics

    CERN Document Server

    Katsnelson, Boris; Lynch, James

    2012-01-01

    Shallow water acoustics (SWA), the study of how low and medium frequency sound propagates and scatters on the continental shelves of the world's oceans, has both technical interest and a large number of practical applications. Technically, shallow water poses an interesting medium for the study of acoustic scattering, inverse theory, and propagation physics in a complicated oceanic waveguide. Practically, shallow water acoustics has interest for geophysical exploration, marine mammal studies, and naval applications. Additionally, one notes the very interdisciplinary nature of shallow water acoustics, including acoustical physics, physical oceanography, marine geology, and marine biology. In this specialized volume, the authors, all of whom have extensive at-sea experience in U.S. and Russian research efforts, have tried to summarize the main experimental, theoretical, and computational results in shallow water acoustics, with an emphasis on providing physical insight into the topics presented.

  11. Valley dependent transport in graphene L junction

    Science.gov (United States)

    Chan, K. S.

    2018-05-01

    We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

  12. Method of manufacturing Josephson junction integrated circuits

    International Nuclear Information System (INIS)

    Jillie, D.W. Jr.; Smith, L.N.

    1985-01-01

    Josephson junction integrated circuits of the current injection type and magnetically controlled type utilize a superconductive layer that forms both Josephson junction electrode for the Josephson junction devices on the integrated circuit as well as a ground plane for the integrated circuit. Large area Josephson junctions are utilized for effecting contact to lower superconductive layers and islands are formed in superconductive layers to provide isolation between the groudplane function and the Josephson junction electrode function as well as to effect crossovers. A superconductor-barrier-superconductor trilayer patterned by local anodization is also utilized with additional layers formed thereover. Methods of manufacturing the embodiments of the invention are disclosed

  13. delta-biased Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Monaco, R.; Mygind, Jesper; Koshelet, V.

    2010-01-01

    Abstract: The behavior of a long Josephson tunnel junction drastically depends on the distribution of the dc bias current. We investigate the case in which the bias current is fed in the central point of a one-dimensional junction. Such junction configuration has been recently used to detect...... the persistent currents circulating in a superconducting loop. Analytical and numerical results indicate that the presence of fractional vortices leads to remarkable differences from the conventional case of uniformly distributed dc bias current. The theoretical findings are supported by detailed measurements...

  14. Correlates of the health statuses of the faculty at midlife

    Directory of Open Access Journals (Sweden)

    Galvin Alaan Galeon

    2016-01-01

    Full Text Available Background: Between the school years of 2009-2012, the turnover record of the University of San Jose-Recoletos (USJ-R, Cebu City, Philippines showed that permanent faculty members who left the institution were all midlifers. Their reasons varied from health issues to greener pasture elsewhere. Materials and Methods: This study then sought to explore the health statuses of the faculty midlifers of the USJ-R. The data were collected through survey conducted among the 106 faculty midlifers of the university. This study applied multivariate analyses to the survey data using Pearson-moment of correlation to determine the relationship between the sociodemographic profile of the research participants and their health statuses. Results: This research revealed that faculty midlifers are generally well physically. They showed emotional maturity and have positive outlook toward midlife. More so, their health conditions are significantly related with their sex, age, years of teaching, educational attainment, and income. Conclusion: At midlife, the faculty members of USJ-R can still generally be considered physically well. Thus, if they are well-managed, they can become relevant and better contributors to the attainment of the basic goals and objectives of the educational institution and the educational system in general.

  15. Junction depth measurement using carrier illumination

    International Nuclear Information System (INIS)

    Borden, Peter

    2001-01-01

    Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

  16. NbN tunnel junctions

    International Nuclear Information System (INIS)

    Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

    1984-09-01

    All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

  17. Hysteresis development in superconducting Josephson junctions

    International Nuclear Information System (INIS)

    Refai, T.F.; Shehata, L.N.

    1988-09-01

    The resistively and capacitive shunted junction model is used to investigate hysteresis development in superconducting Josephson junctions. Two empirical formulas that relate the hysteresis width and the quasi-particle diffusion length in terms of the junctions electrical parameters, temperature and frequency are obtained. The obtained formulas provide a simple tool to investigate the full potentials of the hysteresis phenomena. (author). 9 refs, 3 figs

  18. 3D seismic surveys for shallow targets

    Energy Technology Data Exchange (ETDEWEB)

    Lawton, D.C.; Stewart, R.R.; Bertram, M.B. [Calgary Univ., AB (Canada). Dept. of Geoscience, Consortium for Research in Elastic Wave Exploration Seismology

    2008-07-01

    Although 3D seismic surveys are generally used to map deep hydrocarbon plays, this study demonstrated that they can be useful for characterizing shallow targets, such as oilsands deposits. A high-resolution 3D seismic survey was undertaken to map shallow stratigraphy near Calgary, Alberta. The project demonstrated the efficacy of reflection seismic surveys for shallow targets ranging from 100 to 500 metres. The purpose of the program was to map shallow stratigraphy and structure to depths of up to 500m, and to investigate shallow aquifers in the study area. The results of the survey illustrated the opportunity that 3D seismic surveys provide for mapping shallow reflectors and the acquisition geometry needed to image them. Applications include mapping the distribution of shallow aquifers, delineating shallow coals and investigating oilsands deposits. 2 refs., 5 figs.

  19. Fabrication of Josephson Junction without shadow evaporation

    Science.gov (United States)

    Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

    We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

  20. Quantum synchronization effects in intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Machida, M.; Kano, T.; Yamada, S.; Okumura, M.; Imamura, T.; Koyama, T.

    2008-01-01

    We investigate quantum dynamics of the superconducting phase in intrinsic Josephson junctions of layered high-T c superconductors motivated by a recent experimental observation for the switching rate enhancement in the low temperature quantum regime. We pay attention to only the capacitive coupling between neighboring junctions and perform large-scale simulations for the Schroedinger equation derived from the Hamiltonian considering the capacitive coupling alone. The simulation focuses on an issue whether the switching of a junction induces those of the other junctions or not. The results reveal that the superconducting phase dynamics show synchronous behavior with increasing the quantum character, e.g., decreasing the junction plane area and effectively the temperature. This is qualitatively consistent with the experimental result

  1. Detectability of underground electrical cables junction with a ground penetrating radar: electromagnetic simulation and experimental measurements

    Science.gov (United States)

    Liu, Xiang; serhir, mohammed; kameni, abelin; lambert, marc; pichon, lionel

    2016-04-01

    For a company like Electricity De France (EDF), being able to detect accurately using non-destructive methods the position of the buried junction between two underground cables is a crucial issue. The junction is the linking part where most maintenance operations are carried out. The challenge of this work is to conduct a feasibility study to confirm or deny the relevance of Ground Penetrating Radar (GPR) to detect these buried junctions in their actual environment against clutter. Indeed, the cables are buried in inhomogeneous medium at around 80cm deep. To do this, the study is conducted in a numerical environment. We use the 3D simulation software CST MWS to model a GPR scenario. In this simulation, we place the already optimized bowtie antennas operating in the frequency band [0.5 GHz - 3 GHz] in front of wet soil (dispersive) and dry soil where the underground cable is placed at 80cm deep. We collect the amplitude and phase of the reflected waves in order to detect the contrast provoked by the geometric dimensions variation of the cable [1] (diameter of the cable is 48mm and the diameter of the junction 74mm). The use of an ultra-wideband antenna is necessary to reconcile resolution and penetration of electromagnetic waves in the medium to be characterized. We focus on the performance of the GPR method according to the characteristics of the surrounding medium in which the electric cables are buried, the polarization of the Tx and Rx antennas. The experimental measurement collected in the EDF site will be presented. The measured data are processed using the clutter reduction method based on digital filtering [2]. We aim at showing that using the developed bowtie antennas that the GPR technique is well adapted for the cable junction localization even in cluttered environment. References [1] D. J. Daniels, "Surface-Penetrating Radar", London, IEE 1996. [2] Potin, D.; Duflos, E.; Vanheeghe, P., "Landmines Ground-Penetrating Radar Signal Enhancement by Digital

  2. Entropy Flow Through Near-Critical Quantum Junctions

    Science.gov (United States)

    Friedan, Daniel

    2017-05-01

    This is the continuation of Friedan (J Stat Phys, 2017. doi: 10.1007/s10955-017-1752-8). Elementary formulas are derived for the flow of entropy through a circuit junction in a near-critical quantum circuit close to equilibrium, based on the structure of the energy-momentum tensor at the junction. The entropic admittance of a near-critical junction in a bulk-critical circuit is expressed in terms of commutators of the chiral entropy currents. The entropic admittance at low frequency, divided by the frequency, gives the change of the junction entropy with temperature—the entropic "capacitance". As an example, and as a check on the formalism, the entropic admittance is calculated explicitly for junctions in bulk-critical quantum Ising circuits (free fermions, massless in the bulk), in terms of the reflection matrix of the junction. The half-bit of information capacity per end of critical Ising wire is re-derived by integrating the entropic "capacitance" with respect to temperature, from T=0 to T=∞.

  3. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  4. Overlap junctions for high coherence superconducting qubits

    Science.gov (United States)

    Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

    2017-07-01

    Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

  5. Surface-Enhanced Raman Scattering in Molecular Junctions.

    Science.gov (United States)

    Iwane, Madoka; Fujii, Shintaro; Kiguchi, Manabu

    2017-08-18

    Surface-enhanced Raman scattering (SERS) is a surface-sensitive vibrational spectroscopy that allows Raman spectroscopy on a single molecular scale. Here, we present a review of SERS from molecular junctions, in which a single molecule or molecules are made to have contact from the top to the bottom of metal surfaces. The molecular junctions are nice platforms for SERS as well as transport measurement. Electronic characterization based on the transport measurements of molecular junctions has been extensively studied for the development of miniaturized electronic devices. Simultaneous SERS and transport measurement of the molecular junctions allow both structural (geometrical) and electronic information on the single molecule scale. The improvement of SERS measurement on molecular junctions open the door toward new nanoscience and nanotechnology in molecular electronics.

  6. Designable ultra-smooth ultra-thin solid-electrolyte interphases of three alkali metal anodes.

    Science.gov (United States)

    Gu, Yu; Wang, Wei-Wei; Li, Yi-Juan; Wu, Qi-Hui; Tang, Shuai; Yan, Jia-Wei; Zheng, Ming-Sen; Wu, De-Yin; Fan, Chun-Hai; Hu, Wei-Qiang; Chen, Zhao-Bin; Fang, Yuan; Zhang, Qing-Hong; Dong, Quan-Feng; Mao, Bing-Wei

    2018-04-09

    Dendrite growth of alkali metal anodes limited their lifetime for charge/discharge cycling. Here, we report near-perfect anodes of lithium, sodium, and potassium metals achieved by electrochemical polishing, which removes microscopic defects and creates ultra-smooth ultra-thin solid-electrolyte interphase layers at metal surfaces for providing a homogeneous environment. Precise characterizations by AFM force probing with corroborative in-depth XPS profile analysis reveal that the ultra-smooth ultra-thin solid-electrolyte interphase can be designed to have alternating inorganic-rich and organic-rich/mixed multi-layered structure, which offers mechanical property of coupled rigidity and elasticity. The polished metal anodes exhibit significantly enhanced cycling stability, specifically the lithium anodes can cycle for over 200 times at a real current density of 2 mA cm -2 with 100% depth of discharge. Our work illustrates that an ultra-smooth ultra-thin solid-electrolyte interphase may be robust enough to suppress dendrite growth and thus serve as an initial layer for further improved protection of alkali metal anodes.

  7. Primary Tunnel Junction Thermometry

    International Nuclear Information System (INIS)

    Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

    2008-01-01

    We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

  8. Ginzburg–Landau theory of mesoscopic multi-band Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Romeo, F.; De Luca, R., E-mail: rdeluca@unisa.it

    2017-05-15

    Highlights: • We generalize, in the realm of the Ginzburg–Landau theory, the de Gennes matching-matrix method for the interface order parameters to describe the superconducting properties of multi-band mesoscopic Josephson junctions. • The results are in agreement with a microscopic treatment of nanobridge junctions. • Thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions. - Abstract: A Ginzburg–Landau theory for multi-band mesoscopic Josephson junctions has been developed. The theory, obtained by generalizing the de Gennes matching-matrix method for the interface order parameters, allows the study of the phase dynamics of various types of mesoscopic Josephson junctions. As a relevant application, we studied mesoscopic double-band junctions also in the presence of a superconducting nanobridge interstitial layer. The results are in agreement with a microscopic treatment of the same system. Furthermore, thermal stability of the nanobridge junction is discussed in connection with recent experiments on iron-based grain-boundary junctions.

  9. The influence of junction conformation on RNA cleavage by the hairpin ribozyme in its natural junction form.

    Science.gov (United States)

    Thomson, J B; Lilley, D M

    1999-01-01

    In the natural form of the hairpin ribozyme the two loop-carrying duplexes that comprise the majority of essential bases for activity form two adjacent helical arms of a four-way RNA junction. In the present work we have manipulated the sequence around the junction in a way known to perturb the global folding properties. We find that replacement of the junction by a different sequence that has the same conformational properties as the natural sequence gives closely similar reaction rate and Arrhenius activation energy for the substrate cleavage reaction. By comparison, rotation of the natural sequence in order to alter the three-dimensional folding of the ribozyme leads to a tenfold reduction in the kinetics of cleavage. Replacement with the U1 four-way junction that is resistant to rotation into the antiparallel structure required to allow interaction between the loops also gives a tenfold reduction in cleavage rate. The results indicate that the conformation of the junction has a major influence on the catalytic activity of the ribozyme. The results are all consistent with a role for the junction in the provision of a framework by which the loops are presented for interaction in order to create the active form of the ribozyme. PMID:10024170

  10. Shallow End Response from ATEM

    Science.gov (United States)

    Vetrov, A.

    2014-12-01

    Different geological, hydrological, environmental and engineering targets are located shallow underground. The information collected with ATEM systems might be very useful for their study; although there are many deeper targets that the ATEM systems are traditionally used for. The idea to raise magnetic moment output and get deeper penetration response was one of the goals of ATEM systems development during the last decade. The shallow geology response was a trade for such systems, which sometimes were almost blind in the first hundred meter under surface. The possibility to achieve shallow end response from ATEM systems has become significant subject in last years. Several airborne TDEM systems got second higher frequency and lower magnetic moment signal to pick up shallow response together with deep one. Having a potential advantage such implementation raises complication and cost of the system. There's no need to receive 500 meter deep response when exploring shallow geology. P-THEM system having a compact size transmitter and relatively light weight is working on one base frequency at a time, but this frequency can be preset before a flight considering survey goals. A study of shallow geology response of the P-THEM system working on different base frequency has been conducted in 2014 in Ontario. The Alliston test area located in Southern Ontario has been flown with the P-THEM system working on base frequencies 30Hz and 90Hz. Results of the observations will be discussed in the presentation. The shallow end data can be used for mineral exploration applications and also for hydrological and environmental studies.

  11. Design of thin InGaAsN(Sb) n-i-p junctions for use in four-junction concentrating photovoltaic devices

    Science.gov (United States)

    Wilkins, Matthew M.; Gupta, James; Jaouad, Abdelatif; Bouzazi, Boussairi; Fafard, Simon; Boucherif, Abderraouf; Valdivia, Christopher E.; Arès, Richard; Aimez, Vincent; Schriemer, Henry P.; Hinzer, Karin

    2017-04-01

    Four-junction solar cells for space and terrestrial applications require a junction with a band gap of ˜1 eV for optimal performance. InGaAsN or InGaAsN(Sb) dilute nitride junctions have been demonstrated for this purpose, but in achieving the 14 mA/cm2 short-circuit current needed to match typical GaInP and GaAs junctions, the open-circuit voltage (VOC) and fill factor of these junctions are compromised. In multijunction devices incorporating materials with short diffusion lengths, we study the use of thin junctions to minimize sensitivity to varying material quality and ensure adequate transmission into lower junctions. An n-i-p device with 0.65-μm absorber thickness has sufficient short-circuit current, however, it relies less heavily on field-aided collection than a device with a 1-μm absorber. Our standard cell fabrication process, which includes a rapid thermal anneal of the contacts, yields a significant improvement in diffusion length and device performance. By optimizing a four-junction cell around a smaller 1-sun short-circuit current of 12.5 mA/cm2, we produced an InGaAsN(Sb) junction with open-circuit voltage of 0.44 V at 1000 suns (1 sun=100 mW/cm2), diode ideality factor of 1.4, and sufficient light transmission to allow >12.5 mA/cm2 in all four subcells.

  12. Harmonic synchronization in resistively coupled Josephson junctions

    International Nuclear Information System (INIS)

    Blackburn, J.A.; Gronbech-Jensen, N.; Smith, H.J.T.

    1994-01-01

    The oscillations of two resistively coupled Josephson junctions biased only by a single dc current source are shown to lock harmonically in a 1:2 mode over a significant range of bias current, even when the junctions are identical. The dependence of this locking on both junction and coupling parameters is examined, and it is found that, for this particular two-junction configuration, 1:1 locking can never occur, and also that a minimum coupling coefficient is needed to support harmonic locking. Some issues related to subharmonic locking are also discussed

  13. Supramolecular Systems and Chemical Reactions in Single-Molecule Break Junctions.

    Science.gov (United States)

    Li, Xiaohui; Hu, Duan; Tan, Zhibing; Bai, Jie; Xiao, Zongyuan; Yang, Yang; Shi, Jia; Hong, Wenjing

    2017-04-01

    The major challenges of molecular electronics are the understanding and manipulation of the electron transport through the single-molecule junction. With the single-molecule break junction techniques, including scanning tunneling microscope break junction technique and mechanically controllable break junction technique, the charge transport through various single-molecule and supramolecular junctions has been studied during the dynamic fabrication and continuous characterization of molecular junctions. This review starts from the charge transport characterization of supramolecular junctions through a variety of noncovalent interactions, such as hydrogen bond, π-π interaction, and electrostatic force. We further review the recent progress in constructing highly conductive molecular junctions via chemical reactions, the response of molecular junctions to external stimuli, as well as the application of break junction techniques in controlling and monitoring chemical reactions in situ. We suggest that beyond the measurement of single molecular conductance, the single-molecule break junction techniques provide a promising access to study molecular assembly and chemical reactions at the single-molecule scale.

  14. Digital pulse-shape discrimination applied to an ultra-low-background gas-proportional counting system. First results

    International Nuclear Information System (INIS)

    Aalseth, C.E.; Day, A.R.; Fuller, E.S.; Hoppe, E.W.; Keillor, M.E.; Mace, E.K.; Myers, A.W.; Overman, C.T.; Panisko, M.E.; Seifert, A.

    2013-01-01

    A new ultra-low-background proportional counter design was recently developed at Pacific Northwest National Laboratory (PNNL). This design, along with an ultra-low-background counting system which provides passive and active shielding with radon exclusion, has been developed to complement a new shallow underground laboratory (∼30 m water-equivalent) constructed at PNNL. After these steps to mitigate dominant backgrounds (cosmic rays, external gamma-rays, radioactivity in materials), remaining background events do not exclusively arise from ionization of the proportional counter gas. Digital pulse-shape discrimination (PSD) is thus employed to further improve measurement sensitivity. In this work, a template shape is generated for each individual sample measurement of interest, a 'self-calibrating' template. Differences in event topology can also cause differences in pulse shape. In this work, the temporal region analyzed for each event is refined to maximize background discrimination while avoiding unwanted sensitivity to event topology. This digital PSD method is applied to sample and background data, and initial measurement results from a biofuel methane sample are presented in the context of low-background measurements currently being developed. (author)

  15. Josephson junctions of multiple superconducting wires

    Science.gov (United States)

    Deb, Oindrila; Sengupta, K.; Sen, Diptiman

    2018-05-01

    We study the spectrum of Andreev bound states and Josephson currents across a junction of N superconducting wires which may have s - or p -wave pairing symmetries and develop a scattering matrix based formalism which allows us to address transport across such junctions. For N ≥3 , it is well known that Berry curvature terms contribute to the Josephson currents; we chart out situations where such terms can have relatively large effects. For a system of three s -wave or three p -wave superconductors, we provide analytic expressions for the Andreev bound-state energies and study the Josephson currents in response to a constant voltage applied across one of the wires; we find that the integrated transconductance at zero temperature is quantized to integer multiples of 4 e2/h , where e is the electron charge and h =2 π ℏ is Planck's constant. For a sinusoidal current with frequency ω applied across one of the wires in the junction, we find that Shapiro plateaus appear in the time-averaged voltage across that wire for any rational fractional multiple (in contrast to only integer multiples in junctions of two wires) of 2 e /(ℏ ω ) . We also use our formalism to study junctions of two p -wave and one s -wave wires. We find that the corresponding Andreev bound-state energies depend on the spin of the Bogoliubov quasiparticles; this produces a net magnetic moment in such junctions. The time variation of these magnetic moments may be controlled by an external voltage applied across the junction. We discuss experiments which may test our theory.

  16. Molecular Diffusion through Cyanobacterial Septal Junctions.

    Science.gov (United States)

    Nieves-Morión, Mercedes; Mullineaux, Conrad W; Flores, Enrique

    2017-01-03

    Heterocyst-forming cyanobacteria grow as filaments in which intercellular molecular exchange takes place. During the differentiation of N 2 -fixing heterocysts, regulators are transferred between cells. In the diazotrophic filament, vegetative cells that fix CO 2 through oxygenic photosynthesis provide the heterocysts with reduced carbon and heterocysts provide the vegetative cells with fixed nitrogen. Intercellular molecular transfer has been traced with fluorescent markers, including calcein, 5-carboxyfluorescein, and the sucrose analogue esculin, which are observed to move down their concentration gradient. In this work, we used fluorescence recovery after photobleaching (FRAP) assays in the model heterocyst-forming cyanobacterium Anabaena sp. strain PCC 7120 to measure the temperature dependence of intercellular transfer of fluorescent markers. We find that the transfer rate constants are directly proportional to the absolute temperature. This indicates that the "septal junctions" (formerly known as "microplasmodesmata") linking the cells in the filament allow molecular exchange by simple diffusion, without any activated intermediate state. This constitutes a novel mechanism for molecular transfer across the bacterial cytoplasmic membrane, in addition to previously characterized mechanisms for active transport and facilitated diffusion. Cyanobacterial septal junctions are functionally analogous to the gap junctions of metazoans. Although bacteria are frequently considered just as unicellular organisms, there are bacteria that behave as true multicellular organisms. The heterocyst-forming cyanobacteria grow as filaments in which cells communicate. Intercellular molecular exchange is thought to be mediated by septal junctions. Here, we show that intercellular transfer of fluorescent markers in the cyanobacterial filament has the physical properties of simple diffusion. Thus, cyanobacterial septal junctions are functionally analogous to metazoan gap junctions

  17. Josephson tunnel junctions in niobium films

    International Nuclear Information System (INIS)

    Wiik, Tapio.

    1976-12-01

    A method of fabricating stable Josephson tunnel junctions with reproducible characteristics is described. The junctions have a sandwich structure consisting of a vacuum evaporated niobium film, a niobium oxide layer produced by the glow discharge method and a lead film deposited by vacuum evaporation. Difficulties in producing thin-film Josephson junctions are discussed. Experimental results suggest that the lower critical field of the niobium film is the most essential parameter when evaluating the quality of these junctions. The dependence of the lower critical field on the film thickness and on the Ginzburg-Landau parameter of the film is studied analytically. Comparison with the properties of the evaporated films and with the previous calculations for bulk specimens shows that the presented model is applicable for most of the prepared samples. (author)

  18. Josephson junctions with ferromagnetic alloy interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Himmel, Nico

    2015-07-23

    Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO{sub x} vertical stroke Nb vertical stroke Ni{sub 60}Cu{sub 40} vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially

  19. Josephson junctions with ferromagnetic alloy interlayer

    International Nuclear Information System (INIS)

    Himmel, Nico

    2015-01-01

    Josephson junctions are used as active devices in superconducting electronics and quantum information technology. Outstanding properties are their distinct non-linear electrical characteristics and a usually sinusoidal relation between the current and the superconducting phase difference across the junction. In general the insertion of ferromagnetic material in the barrier of a Josephson junction is associated with a suppression of superconducting correlations. But also new phenomena can arise which may allow new circuit layouts and enhance the performance of applications. This thesis presents a systematic investigation for two concepts to fabricate Josephson junctions with a rather uncommon negative critical current. Such devices exhibit an intrinsic phase slip of π between the electrodes, so they are also known as π junctions. Both studies go well beyond existing experiments and in one system a π junction is shown for the first time. All the thin film junctions are based on superconducting Nb electrodes. In a first approach, barriers made from Si and Fe were investigated with respect to the realisation of π junctions by spin-flip processes. The distribution of Fe in the Si matrix was varied from pure layers to disperse compounds. The systematic fabrication of alloy barriers was facilitated by the development of a novel timing-based combinatorial sputtering technique for planetary deposition systems. An orthogonal gradient approach allowed to create binary layer libraries with independent variations of thickness and composition. Second, Nb vertical stroke AlO x vertical stroke Nb vertical stroke Ni 60 Cu 40 vertical stroke Nb (SIsFS) double barrier junctions were experimentally studied for the occurrence of proximity effect induced order parameter oscillations. Detailed dependencies of the critical current density on the thickness of s-layer and F-layer were acquired and show a remarkable agreement to existing theoretical predictions. Especially a variation of

  20. Molecular series-tunneling junctions.

    Science.gov (United States)

    Liao, Kung-Ching; Hsu, Liang-Yan; Bowers, Carleen M; Rabitz, Herschel; Whitesides, George M

    2015-05-13

    Charge transport through junctions consisting of insulating molecular units is a quantum phenomenon that cannot be described adequately by classical circuit laws. This paper explores tunneling current densities in self-assembled monolayer (SAM)-based junctions with the structure Ag(TS)/O2C-R1-R2-H//Ga2O3/EGaIn, where Ag(TS) is template-stripped silver and EGaIn is the eutectic alloy of gallium and indium; R1 and R2 refer to two classes of insulating molecular units-(CH2)n and (C6H4)m-that are connected in series and have different tunneling decay constants in the Simmons equation. These junctions can be analyzed as a form of series-tunneling junctions based on the observation that permuting the order of R1 and R2 in the junction does not alter the overall rate of charge transport. By using the Ag/O2C interface, this system decouples the highest occupied molecular orbital (HOMO, which is localized on the carboxylate group) from strong interactions with the R1 and R2 units. The differences in rates of tunneling are thus determined by the electronic structure of the groups R1 and R2; these differences are not influenced by the order of R1 and R2 in the SAM. In an electrical potential model that rationalizes this observation, R1 and R2 contribute independently to the height of the barrier. This model explicitly assumes that contributions to rates of tunneling from the Ag(TS)/O2C and H//Ga2O3 interfaces are constant across the series examined. The current density of these series-tunneling junctions can be described by J(V) = J0(V) exp(-β1d1 - β2d2), where J(V) is the current density (A/cm(2)) at applied voltage V and βi and di are the parameters describing the attenuation of the tunneling current through a rectangular tunneling barrier, with width d and a height related to the attenuation factor β.

  1. Performance of single-junction and dual-junction InGaP/GaAs solar cells under low concentration ratios

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Yamaguchi, Masafumi; Takamoto, Tatsuya

    2004-01-01

    A study of the performance of single-junction InGaP/GaAs and dual-junction InGaP/GaAs tandem cells under low concentration ratios (up to 15 suns), before and after 1 MeV electron irradiation is presented. Analysis of the tunnel junction parameters under different concentrated light illuminations reveals that the peak current (J P ) and valley current (J V ) densities should be greater than the short-circuit current density (J sc ) for better performance. The tunnel junction behavior against light intensity improved after irradiation. This led to the suggestion that the peak current density (J P ) and valley current density (J V ) of the tunnel junction were enhanced after irradiation or the peak current was shifted to higher concentration. The recovery of the radiation damage under concentrated light illumination conditions suggests that the performance of the InGaP/GaAs tandem solar cell can be enhanced even under low concentration ratios

  2. Current noise in tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Frey, Moritz; Grabert, Hermann [Physikalisches Institut, Universitaet Freiburg, Hermann-Herder-Strasse 3, 79104, Freiburg (Germany)

    2017-06-15

    We study current fluctuations in tunnel junctions driven by a voltage source. The voltage is applied to the tunneling element via an impedance providing an electromagnetic environment of the junction. We use circuit theory to relate the fluctuations of the current flowing in the leads of the junction with the voltage fluctuations generated by the environmental impedance and the fluctuations of the tunneling current. The spectrum of current fluctuations is found to consist of three parts: a term arising from the environmental Johnson-Nyquist noise, a term due to the shot noise of the tunneling current and a third term describing the cross-correlation between these two noise sources. Our phenomenological theory reproduces previous results based on the Hamiltonian model for the dynamical Coulomb blockade and provides a simple understanding of the current fluctuation spectrum in terms of circuit theory and properties of the average current. Specific results are given for a tunnel junction driven through a resonator. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Curved Josephson junction

    International Nuclear Information System (INIS)

    Dobrowolski, Tomasz

    2012-01-01

    The constant curvature one and quasi-one dimensional Josephson junction is considered. On the base of Maxwell equations, the sine–Gordon equation that describes an influence of curvature on the kink motion was obtained. It is showed that the method of geometrical reduction of the sine–Gordon model from three to lower dimensional manifold leads to an identical form of the sine–Gordon equation. - Highlights: ► The research on dynamics of the phase in a curved Josephson junction is performed. ► The geometrical reduction is applied to the sine–Gordon model. ► The results of geometrical reduction and the fundamental research are compared.

  4. Josephson tunnel junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Weides, M.P.

    2006-01-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  5. Josephson tunnel junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Weides, M.P.

    2006-07-01

    Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

  6. Influence of the spacer dielectric processes on PMOS junction properties

    International Nuclear Information System (INIS)

    Morin, Pierre; Wacquant, Francois; Juhel, Marc; Laviron, Cyrille; Lenoble, D.

    2005-01-01

    In this paper, the interaction observed in PMOS transistor between the boron lightly doped drain (LDD) extensions and the spacer oxide and nitride dielectrics have been studied, with a simple experimental methodology. Low thermal budget oxide obtained by sub-atmospheric chemical vapor deposition (SACVD) and nitride deposited by plasma process have been evaluated as spacer layers. The influence of the oxide liner hydrogen content is shown to be critical for the p type shallow junction. Indeed, during the activation anneal, hydrogen content increases the boron out diffusion from the extension into the oxide liner and yield to a significant dose loss in this area. Nitride porosity has also been studied. A lower boron dose loss is observed with a porous layer because hydrogen can degas out significantly from the oxide, during anneal, through the porous nitride film. These results confirm the model of boron out diffusion based on oxide hydrogen content proposed by Kohli. Finally, a boron diffusion mechanism driven by chemistry and enhanced by hydrogen defects is proposed

  7. Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte-Huxel, Henning [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rienaecker, Michael [Institute for Solar Energy Research Hamelin (ISFH); Merkle, Agnes [Institute for Solar Energy Research Hamelin (ISFH); Kajari-Schroeder, S. [Institute for Solar Energy Research Hamelin (ISFH); Niepelt, Raphael [Institute for Solar Energy Research Hamelin (ISFH); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Brendel, Rolf [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Peibst, Robby [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover

    2017-10-02

    Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

  8. Shallow-Water Mud Acoustics

    Science.gov (United States)

    2015-09-30

    1 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. Shallow-Water Mud Acoustics William L. Siegmann...models and methods that explain observed material and acoustic properties of different physical types of shallow-ocean mud sediments. Other goals...are to assess prior data relating to the acoustic properties of mud and to provide guidance in the development and interpretation of experiments. A

  9. Electromagnetic waves in single- and multi-Josephson junctions

    International Nuclear Information System (INIS)

    Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

    2008-01-01

    The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

  10. Tunable Nitride Josephson Junctions.

    Energy Technology Data Exchange (ETDEWEB)

    Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.

  11. Scattering theory of superconductive tunneling in quantum junctions

    International Nuclear Information System (INIS)

    Shumeiko, V.S.; Bratus', E.N.

    1997-01-01

    A consistent theory of superconductive tunneling in single-mode junctions within a scattering formulation of Bogolyubov-de Gennes quantum mechanics is presented. The dc Josephson effect and dc quasiparticle transport in the voltage-biased junctions are considered. Elastic quasiparticle scattering by the junction determines the equilibrium Josephson current. The origin of Andreev bound states in tunnel junctions and their role in equilibrium Josephson transport are discussed. In contrast, quasiparticle tunneling in voltage-biased junctions is determined by inelastic scattering. A general expression for inelastic scattering amplitudes is derived and the quasiparticle current is calculated at all voltages with emphasis on a discussion of the properties of sub gap tunnel current and the nature of subharmonic gap structure

  12. Short chain molecular junctions: Charge transport versus dipole moment

    International Nuclear Information System (INIS)

    Ikram, I. Mohamed; Rabinal, M.K.

    2015-01-01

    Graphical abstract: - Highlights: • The role of dipole moment of organic molecules on molecular junctions has been studied. • Molecular junctions constituted using propargyl molecules of different dipole moments. • The electronic properties of the molecules were calculated using Gaussian software. • Junctions show varying rectification due to their varying dipole moment and orientation. - Abstract: The investigation of the influence of dipole moment of short chain organic molecules having three carbon atoms varying in end group on silicon surface was carried on. Here, we use three different molecules of propargyl series varying in dipole moment and its orientation to constitute molecular junctions. The charge transport mechanism in metal–molecules–semiconductor (MMS) junction obtained from current–voltage (I–V) characteristics shows the rectification behavior for two junctions whereas the other junction shows a weak rectification. The electronic properties of the molecules were calculated using Gaussian software package. The observed rectification behavior of these junctions is examined and found to be accounted to the orientation of dipole moment and electron cloud density distribution inside the molecules

  13. Some chaotic features of intrinsically coupled Josephson junctions

    International Nuclear Information System (INIS)

    Kolahchi, M.R.; Shukrinov, Yu.M.; Hamdipour, M.; Botha, A.E.; Suzuki, M.

    2013-01-01

    Highlights: ► Intrinsically coupled Josephson junctions model a high-T c superconductor. ► Intrinsically coupled Josephson junctions can act as a chaotic nonlinear system. ► Chaos could be due to resonance overlap. ► Avoiding parameters that lead to chaos is important for the design of resonators. -- Abstract: We look for chaos in an intrinsically coupled system of Josephson junctions. This study has direct applications for the high-T c resonators which require coherence amongst the junctions

  14. Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

    Science.gov (United States)

    Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

    2017-12-01

    With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

  15. Nonlinear vs. bolometric radiation response and phonon thermal conductance in graphene-superconductor junctions

    International Nuclear Information System (INIS)

    Vora, Heli; Nielsen, Bent; Du, Xu

    2014-01-01

    Graphene is a promising candidate for building fast and ultra-sensitive bolometric detectors due to its weak electron-phonon coupling and low heat capacity. In order to realize a practical graphene-based bolometer, several important issues, including the nature of radiation response, coupling efficiency to the radiation and the thermal conductance need to be carefully studied. Addressing these issues, we present graphene-superconductor junctions as a viable option to achieve efficient and sensitive bolometers, with the superconductor contacts serving as hot electron barriers. For a graphene-superconductor device with highly transparent interfaces, the resistance readout in the presence of radio frequency radiation is dominated by non-linear response. On the other hand, a graphene-superconductor tunnel device shows dominantly bolometric response to radiation. For graphene devices fabricated on SiO 2 substrates, we confirm recent theoretical predictions of T 2 temperature dependence of phonon thermal conductance in the presence of disorder in the graphene channel at low temperatures

  16. Activation and deactivation in heavily boron-doped silicon

    International Nuclear Information System (INIS)

    Yoo, Seung-Han; Ro, Jae-Sang

    2003-01-01

    A shallow p + /n junction was formed using a ultra-low-energy (ULE) implanter. Activation by rapid thermal annealing (RTA) exhibited both solid phase epitaxy, in which the sheet resistance dropped rapidly, and reverse annealing, in a manner similar to furnace annealing. The temperature ranges in which these phenomena were observed, however, were higher in the case of RTA processing than they were in the case of furnace annealing due to the low thermal budget associated with the former. Deactivation phenomena were investigated for the shallow source/drain junction based on measurements of the post-annealing time and temperature following the RTA treatments. We found that the deactivation kinetics was divided into two regions. In the first regions, the rate of deactivation increased exponentially with the annealing temperature up to 850 .deg. C. In the second regions, it was found to decrease linearly with the annealing temperature beyond 850 .deg. C. We believe that the first region is kinetically limited while the second is thermodynamically limited. We also observed 'transient enhanced deactivation' an anomalous increase in the sheet resistance during the early stage of annealing at temperatures higher than 800 .deg. C. The activation energy for transient enhanced deactivation was measured to be in the 1.75 ∼ 1.87 eV range while that for normal deactivation was found to be between 3.49 and 3.69 eV.

  17. Gap junctions and connexin-interacting proteins

    NARCIS (Netherlands)

    Giepmans, Ben N G

    2004-01-01

    Gap junctions form channels between adjacent cells. The core proteins of these channels are the connexins. Regulation of gap junction communication (GJC) can be modulated by connexin-associating proteins, such as regulatory protein phosphatases and protein kinases, of which c-Src is the

  18. Physiology and Pathophysiology in Ultra-Marathon Running

    Directory of Open Access Journals (Sweden)

    Beat Knechtle

    2018-06-01

    Full Text Available In this overview, we summarize the findings of the literature with regards to physiology and pathophysiology of ultra-marathon running. The number of ultra-marathon races and the number of official finishers considerably increased in the last decades especially due to the increased number of female and age-group runners. A typical ultra-marathoner is male, married, well-educated, and ~45 years old. Female ultra-marathoners account for ~20% of the total number of finishers. Ultra-marathoners are older and have a larger weekly training volume, but run more slowly during training compared to marathoners. Previous experience (e.g., number of finishes in ultra-marathon races and personal best marathon time is the most important predictor variable for a successful ultra-marathon performance followed by specific anthropometric (e.g., low body mass index, BMI, and low body fat and training (e.g., high volume and running speed during training characteristics. Women are slower than men, but the sex difference in performance decreased in recent years to ~10–20% depending upon the length of the ultra-marathon. The fastest ultra-marathon race times are generally achieved at the age of 35–45 years or older for both women and men, and the age of peak performance increases with increasing race distance or duration. An ultra-marathon leads to an energy deficit resulting in a reduction of both body fat and skeletal muscle mass. An ultra-marathon in combination with other risk factors, such as extreme weather conditions (either heat or cold or the country where the race is held, can lead to exercise-associated hyponatremia. An ultra-marathon can also lead to changes in biomarkers indicating a pathological process in specific organs or organ systems such as skeletal muscles, heart, liver, kidney, immune and endocrine system. These changes are usually temporary, depending on intensity and duration of the performance, and usually normalize after the race. In

  19. Planar Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monacoa, R.; Aarøe, Morten; Mygind, Jesper

    2007-01-01

    demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

  20. Particle detection with superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Jany, P.

    1990-08-01

    At the Institute of Experimental Nuclear Physics of the University of Karlsruhe (TH) and at the Institute for Nuclear Physics of the Kernforschungszentrum Karlsruhe we started to produce superconducting tunnel junctions and to investigate them for their suitability as particle detectors. The required facilities for the production of tunnel junctions and the experimental equipments to carry out experiments with them were erected. Experiments are presented in which radiations of different kinds of particles could successfully be measured with the tunnel junctions produced. At first we succeeded in detectioning light pulses of a laser. In experiments with alpha-particles of an energy of 4,6 MeV the alpha-particles were detected with an energy resolution of 1,1%, and it was shown in specific experiments that the phonons originating from the deposition of energy by an alpha-particle in the substrate can be detected with superconducting tunnel junctions at the surface. On that occasion it turned out that the signals could be separated with respect to their point of origin (tunnel junction, contact leads, substrate). Finally X-rays with an energy of 6 keV were detected with an energy resolution of 8% in a test arrangement that makes use of the so-called trapping effect to read out a larger absorber volume. (orig.) [de

  1. Effect of solar-cell junction geometry on open-circuit voltage

    Science.gov (United States)

    Weizer, V. G.; Godlewski, M. P.

    1985-01-01

    Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

  2. Advance of Mechanically Controllable Break Junction for Molecular Electronics.

    Science.gov (United States)

    Wang, Lu; Wang, Ling; Zhang, Lei; Xiang, Dong

    2017-06-01

    Molecular electronics stands for the ultimate size of functional elements, keeping up with an unstoppable trend over the past few decades. As a vital component of molecular electronics, single molecular junctions have attracted significant attention from research groups all over the world. Due to its pronounced superiority, the mechanically controllable break junctions (MCBJ) technique has been widely applied to characterize the dynamic performance of single molecular junctions. This review presents a system analysis for single-molecule junctions and offers an overview of four test-beds for single-molecule junctions, thus offering more insight into the mechanisms of electron transport. We mainly focus on the development of state-of-the-art mechanically controlled break junctions. The three-terminal gated MCBJ approaches are introduced to manipulate the electron transport of molecules, and MCBJs are combined with characterization techniques. Additionally, applications of MCBJs and remarkable properties of single molecules are addressed. Finally, the challenges and perspective for the mechanically controllable break junctions technique are provided.

  3. Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance

    DEFF Research Database (Denmark)

    Huet, K.; Lin, Rong; Boniface, C

    2009-01-01

    In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap...... parameter optimization. It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap...

  4. Establishment of a universal and rational gene detection strategy through three-way junction-based remote transduction.

    Science.gov (United States)

    Tang, Yidan; Lu, Baiyang; Zhu, Zhentong; Li, Bingling

    2018-01-21

    The polymerase chain reaction and many isothermal amplifications are able to achieve super gene amplification. Unfortunately, most commonly-used transduction methods, such as dye staining and Taqman-like probing, still suffer from shortcomings including false signals or difficult probe design, or are incompatible with multi-analysis. Here a universal and rational gene detection strategy has been established by translating isothermal amplicons to enzyme-free strand displacement circuits via three-way junction-based remote transduction. An assistant transduction probe was imported to form a partial hybrid with the target single-stranded nucleic acid. After systematic optimization the hybrid could serve as an associative trigger to activate a downstream circuit detector via a strand displacement reaction across the three-way junction. By doing so, the detection selectivity can be double-guaranteed through both amplicon-transducer recognition and the amplicon-circuit reaction. A well-optimized circuit can be immediately applied to a new target detection through simply displacing only 10-12 nt on only one component, according to the target. More importantly, this property for the first time enables multi-analysis and logic-analysis in a single reaction, sharing a single fluorescence reporter. In an applicable model, trace amounts of Cronobacter and Enterobacteria genes have been clearly distinguished from samples with no bacteria or one bacterium, with ultra-high sensitivity and selectivity.

  5. Microwave phase locking of Josephson-junction fluxon oscillators

    DEFF Research Database (Denmark)

    Salerno, M.; Samuelsen, Mogens Rugholm; Filatrella, G.

    1990-01-01

    Application of the classic McLaughlin-Scott soliton perturbation theory to a Josephson-junction fluxon subjected to a microwave field that interacts with the fluxon only at the junction boundaries reduces the problem of phase locking of the fluxon oscillation to the study of a two-dimensional fun......Application of the classic McLaughlin-Scott soliton perturbation theory to a Josephson-junction fluxon subjected to a microwave field that interacts with the fluxon only at the junction boundaries reduces the problem of phase locking of the fluxon oscillation to the study of a two...

  6. The critical current of point symmetric Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Monaco, Roberto

    2016-01-01

    Highlights: • We disclose some geometrical properties of the critical current field dependence that apply to a large class of Josephson junctions characterized by a point symmetric shape. • The developed theory is valid for any orientation of the applied magnetic field, therefore it allows the determine the consequences of field misalignment in the experimental setups. • We also address that the threshold curves of Josephson tunnel junctions with complex shapes can be expressed as a linear combination of the threshold curves of junctions with simpler point symmetric shapes. - Abstract: The physics of Josephson tunnel junctions drastically depends on their geometrical configurations. The shape of the junction determines the specific form of the magnetic-field dependence of its Josephson current. Here we address the magnetic diffraction patterns of specially shaped planar Josephson tunnel junctions in the presence of an in-plane magnetic field of arbitrary orientations. We focus on a wide ensemble of junctions whose shape is invariant under point reflection. We analyze the implications of this type of isometry and derive the threshold curves of junctions whose shape is the union or the relative complement of two point symmetric plane figures.

  7. Solar cell junction temperature measurement of PV module

    KAUST Repository

    Huang, B.J.

    2011-02-01

    The present study develops a simple non-destructive method to measure the solar cell junction temperature of PV module. The PV module was put in the environmental chamber with precise temperature control to keep the solar PV module as well as the cell junction in thermal equilibrium with the chamber. The open-circuit voltage of PV module Voc is then measured using a short pulse of solar irradiation provided by a solar simulator. Repeating the measurements at different environment temperature (40-80°C) and solar irradiation S (200-1000W/m2), the correlation between the open-circuit voltage Voc, the junction temperature Tj, and solar irradiation S is derived.The fundamental correlation of the PV module is utilized for on-site monitoring of solar cell junction temperature using the measured Voc and S at a short time instant with open circuit. The junction temperature Tj is then determined using the measured S and Voc through the fundamental correlation. The outdoor test results show that the junction temperature measured using the present method, Tjo, is more accurate. The maximum error using the average surface temperature Tave as the junction temperature is 4.8 °C underestimation; while the maximum error using the present method is 1.3 °C underestimation. © 2010 Elsevier Ltd.

  8. Soliton excitations in Josephson tunnel junctions

    DEFF Research Database (Denmark)

    Lomdahl, P. S.; Sørensen, O. H.; Christiansen, Peter Leth

    1982-01-01

    A detailed numerical study of a sine-Gordon model of the Josephson tunnel junction is compared with experimental measurements on junctions with different L / λJ ratios. The soliton picture is found to apply well on both relatively long (L / λJ=6) and intermediate (L / λJ=2) junctions. We find good...... agreement for the current-voltage characteristics, power output, and for the shape and height of the zero-field steps (ZFS). Two distinct modes of soliton oscillations are observed: (i) a bunched or congealed mode giving rise to the fundamental frequency f1 on all ZFS's and (ii) a "symmetric" mode which...... on the Nth ZFS yields the frequency Nf1 Coexistence of two adjacent frequencies is found on the third ZFS of the longer junction (L / λJ=6) in a narrow range of bias current as also found in the experiments. Small asymmetries in the experimental environment, a weak magnetic field, e.g., is introduced via...

  9. Design and Fabrication of a Piezoresistive Pressure Sensor for Ultra High Temperature Environment

    International Nuclear Information System (INIS)

    Zhao, L B; Zhao, Y L; Jiang, Z D

    2006-01-01

    In order to solve the pressure measurement problem in the harsh environment, a piezoresistive pressure sensor has been developed, which can be used under high temperature above 200 deg. C and is able to endure instantaneous ultra high temperature (2000deg. C, duration≤2s) impact. Based on the MEMS (Micro Electro-Mechanical System) and integrated circuit technology, the piezoresistive pressure sensor's sensitive element was fabricated and constituted by silicon substrate, a thin buried silicon dioxide layer, four p-type resistors in the measuring circuit layer by boron ion implantation and photolithography, the top SiO2 layer by oxidation, stress matching Si3N4 layer, and a Ti-Pt-Au beam lead layer for connecting p-type resistors by sputtering. In order to decrease the leak-current influence to sensor in high temperature above 200deg. C, the buried SiO2 layer with the thickness 367 nm was fabricated by the SIMOX (Separation by Implantation of Oxygen) technology, which was instead of p-n junction to isolate the upper measuring circuit layer from Si substrate. In order to endure instantaneous ultra high temperature impact, the mechanical structure with cantilever and diaphragm and transmitting beam was designed. By laser welding and high temperature packaging technology, the high temperature piezoresistive pressure sensor was fabricated with range of 120MPa. After the thermal compensation, the sensor's thermal zero drift k 0 and thermal sensitivity drift k s were easy to be less than 3x10 -4 FS/deg. C. The experimental results show that the developed piezoresistive pressure sensor has good performances under high temperature and is able to endure instantaneous ultra high temperature impact, which meets the requirements of modern industry, such as aviation, oil, engine, etc

  10. Constructing carbon nanotube junctions by Ar ion beam irradiation

    International Nuclear Information System (INIS)

    Ishaq, Ahmad; Ni Zhichun; Yan Long; Gong Jinlong; Zhu Dezhang

    2010-01-01

    Carbon nanotubes (CNTs) irradiated by Ar ion beams at elevated temperature were studied. The irradiation-induced defects in CNTs are greatly reduced by elevated temperature. Moreover, the two types of CNT junctions, the crossing junction and the parallel junction, were formed. And the CNT networks may be fabricated by the two types of CNT junctions. The formation process and the corresponding mechanism of CNT networks are discussed.

  11. Field modulation of the critical current in magnetic Josephson junctions

    International Nuclear Information System (INIS)

    Blamire, M G; Smiet, C B; Banerjee, N; Robinson, J W A

    2013-01-01

    The dependence of the critical current of a simple Josephson junction on the applied magnetic field is well known and, for a rectangular junction, gives rise to the classic ‘Fraunhofer’ modulation with periodic zeros at the fields that introduce a flux quantum into the junction region. Much recent work has been performed on Josephson junctions that contain magnetic layers. The magnetization of such layers introduces additional flux into the junction and, for large junction areas or strong magnetic materials, can significantly distort the modulation of the critical current and strongly suppress the maximum critical current. The growing interest in junctions that induce odd-frequency triplet pairing in a ferromagnet, and the need to make quantitative comparisons with theory, mean that a full understanding of the role of magnetic barriers in controlling the critical current is necessary. This paper analyses the effect of magnetism and various magnetic configurations on Josephson critical currents; the overall treatment applies to junctions of general shape, but the specific cases of square and rectangular junctions are considered. (paper)

  12. Shunted-Josephson-junction model. II. The nonautonomous case

    DEFF Research Database (Denmark)

    Belykh, V. N.; Pedersen, Niels Falsig; Sørensen, O. H.

    1977-01-01

    The shunted-Josephson-junction model with a monochromatic ac current drive is discussed employing the qualitative methods of the theory of nonlinear oscillations. As in the preceding paper dealing with the autonomous junction, the model includes a phase-dependent conductance and a shunt capacitance....... The mathematical discussion makes use of the phase-space representation of the solutions to the differential equation. The behavior of the trajectories in phase space is described for different characteristic regions in parameter space and the associated features of the junction IV curve to be expected are pointed...... out. The main objective is to provide a qualitative understanding of the junction behavior, to clarify which kinds of properties may be derived from the shunted-junction model, and to specify the relative arrangement of the important domains in the parameter-space decomposition....

  13. Observation of supercurrent in graphene-based Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2015-07-01

    Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

  14. Josephson junction arrays and superconducting wire networks

    International Nuclear Information System (INIS)

    Lobb, C.J.

    1992-01-01

    Techniques used to fabricate integrated circuits make it possible to construct superconducting networks containing as many as 10 6 wires or Josephson junctions. Such networks undergo phase transitions from resistive high-temperature states to ordered low-resistance low-temperature states. The nature of the phase transition depends strongly on controllable parameters such as the strength of the superconductivity in each wire or junction and the external magnetic field. This paper will review the physics of these phase transitions, starting with the simplest zero-magnetic field case. This leads to a Kosterlitz-Thouless transition when the junctions or wires are weak, and a simple mean-field fransition when the junctions or wires are strong. Rich behavior, resulting from frustration, occurs in the presence of a magnetic field. (orig.)

  15. Phenomenological approach to bistable behavior of Josephson junctions

    International Nuclear Information System (INIS)

    Nishi, K.; Nara, S.; Hamanaka, K.

    1985-01-01

    The interaction of unbiased Josephson junction with external electromagnetic field in the presence of externally applied uniform magnetic field is theoretically examined by means of phenomenological treatment. It is proposed that an irradiated junction with suitably chosen parameters shows a bistable behavior of voltage across the junction as a function of the radiation intensity

  16. Steady flow in shallow channel bends

    OpenAIRE

    De Vriend, H.J.

    1981-01-01

    Making use of a mathematical model solving the complete NavierStokes equations for steady flow in coiled rectangular pipes, fully-developed laminar flow in shallow curved channels is analysed physically and mathematically. Transverse convection of momentum by the secondary flow is shown to cause important deformations of the main velocity distribution. The model is also used to investigate simplified computation methods for shallow channels. The usual 'shallow water approximation' is shown to...

  17. Multiplication in Silicon p-n Junctions

    DEFF Research Database (Denmark)

    Moll, John L.

    1965-01-01

    Multiplication values were measured in the collector junctions of silicon p-n-p and n-p-n transistors before and after bombardment by 1016 neutrons/cm2. Within experimental error there was no change either in junction fields, as deduced from capacitance measurements, or in multiplication values i...

  18. Anchored PKA as a gatekeeper for gap junctions.

    Science.gov (United States)

    Pidoux, Guillaume; Taskén, Kjetil

    2015-01-01

    Anchored protein kinase A (PKA) bound to A Kinase Anchoring Protein (AKAP) mediates effects of localized increases in cAMP in defined subcellular microdomains and retains the specificity in cAMP-PKA signaling to distinct extracellular stimuli. Gap junctions are pores between adjacent cells constituted by connexin proteins that provide means of communication and transfer of small molecules. While the PKA signaling is known to promote human trophoblast cell fusion, the gap junction communication through connexin 43 (Cx43) is a prerequisite for this process. We recently demonstrated that trophoblast fusion is regulated by ezrin, a known AKAP, which binds to Cx43 and delivers PKA in the vicinity gap junctions. We found that disruption of the ezrin-Cx43 interaction abolished PKA-dependent phosphorylation of Cx43 as well as gap junction communication and subsequently cell fusion. We propose that the PKA-ezrin-Cx43 macromolecular complex regulating gap junction communication constitutes a general mechanism to control opening of Cx43 gap junctions by phosphorylation in response to cAMP signaling in various cell types.

  19. Heat Transport in Graphene Ferromagnet-Insulator-Superconductor Junctions

    Institute of Scientific and Technical Information of China (English)

    LI Xiao-Wei

    2011-01-01

    We study heat transport in a graphene ferromagnet-insulator-superconducting junction. It is found that the thermal conductance of the graphene ferromagnet-insulator-superconductor (FIS) junction is an oscillatory function of the barrier strength x in the thin-barrier limit. The gate potential U0 decreases the amplitude of thermal conductance oscillation. Both the amplitude and phase of the thermal conductance oscillation varies with the exchange energy Eh. The thermal conductance of a graphene FIS junction displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of superconducting graphene.%@@ We study heat transport in a graphene ferromagnet-insulator-superconducting junction.It is found that the thermal conductance of the graphene ferromagnet-insulator-superconductor(FIS)junction is an oscillatory function of the barrier strength X in the thin-barrier limit.The gate potential Uo decreases the amplitude of thermal conductance oscillation.Both the amplitude and phase of the thermal conductance oscillation varies with the exchange energy Eh.The thermal conductance of a graphene FIS junction displays the usual exponential dependence on temperature, reflecting the s-wave symmetry of superconducting graphene.

  20. Terahertz Responses of Intrinsic Josephson Junctions in High TC Superconductors

    International Nuclear Information System (INIS)

    Wang, H. B.; Wu, P. H.; Yamashita, T.

    2001-01-01

    High frequency responses of intrinsic Josephson junctions up to 2.5THz, including the observation of Shapiro steps under various conditions, are reported and discussed in this Letter. The sample was an array of intrinsic Josephson junctions singled out from inside a high T C superconducting Bi 2 Sr 2 CaCu 2 O 8+x single crystal, with a bow-tie antenna integrated to it. The number of junctions in the array was controllable, the junctions were homogeneous, the distribution of applied irradiation among the junctions was even, and the junctions could synchronously respond to high frequency irradiation

  1. Long Josephson Junction Stack Coupled to a Cavity

    DEFF Research Database (Denmark)

    Madsen, Søren Peder; Pedersen, Niels Falsig; Groenbech-Jensen, N.

    2007-01-01

    A stack of inductively coupled long Josephson junctions are modeled as a system of coupled sine-Gordon equations. One boundary of the stack is coupled electrically to a resonant cavity. With one fluxon in each Josephson junction, the inter-junction fluxon forces are repulsive. We look at a possible...... transition, induced by the cavity, to a bunched state....

  2. Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

    International Nuclear Information System (INIS)

    Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng

    2016-01-01

    A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)

  3. Structural Origins of Conductance Fluctuations in Gold–Thiolate Molecular Transport Junctions

    KAUST Repository

    French, William R.

    2013-03-21

    We report detailed atomistic simulations combined with high-fidelity conductance calculations to probe the structural origins of conductance fluctuations in thermally evolving Au-benzene-1,4-dithiolate-Au junctions. We compare the behavior of structurally ideal junctions (where the electrodes are modeled as flat surfaces) to structurally realistic, experimentally representative junctions resulting from break-junction simulations. The enhanced mobility of metal atoms in structurally realistic junctions results in significant changes to the magnitude and origin of the conductance fluctuations. Fluctuations are larger by a factor of 2-3 in realistic junctions compared to ideal junctions. Moreover, in junctions with highly deformed electrodes, the conductance fluctuations arise primarily from changes in the Au geometry, in contrast to results for junctions with nondeformed electrodes, where the conductance fluctuations are dominated by changes in the molecule geometry. These results provide important guidance to experimentalists developing strategies to control molecular conductance, and also to theoreticians invoking simplified structural models of junctions to predict their behavior. © 2013 American Chemical Society.

  4. Structural Origins of Conductance Fluctuations in Gold–Thiolate Molecular Transport Junctions

    KAUST Repository

    French, William R.; Iacovella, Christopher R.; Rungger, Ivan; Souza, Amaury Melo; Sanvito, Stefano; Cummings, Peter T.

    2013-01-01

    We report detailed atomistic simulations combined with high-fidelity conductance calculations to probe the structural origins of conductance fluctuations in thermally evolving Au-benzene-1,4-dithiolate-Au junctions. We compare the behavior of structurally ideal junctions (where the electrodes are modeled as flat surfaces) to structurally realistic, experimentally representative junctions resulting from break-junction simulations. The enhanced mobility of metal atoms in structurally realistic junctions results in significant changes to the magnitude and origin of the conductance fluctuations. Fluctuations are larger by a factor of 2-3 in realistic junctions compared to ideal junctions. Moreover, in junctions with highly deformed electrodes, the conductance fluctuations arise primarily from changes in the Au geometry, in contrast to results for junctions with nondeformed electrodes, where the conductance fluctuations are dominated by changes in the molecule geometry. These results provide important guidance to experimentalists developing strategies to control molecular conductance, and also to theoreticians invoking simplified structural models of junctions to predict their behavior. © 2013 American Chemical Society.

  5. Silicon fiber with p-n junction

    International Nuclear Information System (INIS)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

    2014-01-01

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900 μm and core diameters of 20–800 μm. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  6. Ultra-high temperature direct propulsion

    International Nuclear Information System (INIS)

    Araj, K.J.; Slovik, G.; Powell, J.R.; Ludewig, H.

    1987-01-01

    Potential advantages of ultra-high exhaust temperature (3000 K - 4000 K) direct propulsion nuclear rockets are explored. Modifications to the Particle Bed Reactor (PBR) to achieve these temperatures are described. Benefits of ultra-high temperature propulsion are discussed for two missions - orbit transfer (ΔV = 5546 m/s) and interplanetary exploration (ΔV = 20000 m/s). For such missions ultra-high temperatures appear to be worth the additional complexity. Thrust levels are reduced substantially for a given power level, due to the higher enthalpy caused by partial disassociation of the hydrogen propellant. Though technically challenging, it appears potentially feasible to achieve such ultra high temperatures using the PBR

  7. Quasiparticle current in superconductor-semiconductor-superconductor junctions

    International Nuclear Information System (INIS)

    Tartakovskij, A.V.; Fistul', M.V.

    1988-01-01

    It is shown that the quasiparticle current in a superconductor-semiconductor-superconductor junction may significantly increase as a result of resonant passage of the quasiparticle along particular trajectories from periodically situated localized centers. A prediction of the theory is that with increasing junction resistance there should be a change from an excessive current to a insufficient current on the current-voltage characteristics (at high voltages). The effect of transparency of the boundaries on resonance tunneling in such junctions is also investigated

  8. ULTRA-LIGHTWEIGHT CEMENT

    Energy Technology Data Exchange (ETDEWEB)

    Fred Sabins

    2001-10-23

    The objective of this project is to develop an improved ultra-lightweight cement using ultra-lightweight hollow glass spheres (ULHS). Work reported herein addresses tasks performed in the fourth quarter as well as the other three quarters of the past year. The subjects that were covered in previous reports and that are also discussed in this report include: Analysis of field laboratory data of active cement applications from three oil-well service companies; Preliminary findings from a literature review focusing on problems associated with ultra-lightweight cements; Summary of pertinent information from Russian ultra-lightweight cement literature review; and Comparison of compressive strengths of ULHS systems using ultrasonic and crush methods Results reported from the fourth quarter include laboratory testing of ULHS systems along with other lightweight cement systems--foamed and sodium silicate slurries. These comparison studies were completed for two different densities (10.0 and 11.5 lb/gal) and three different field application scenarios. Additional testing included the mechanical properties of ULHS systems and other lightweight systems. Studies were also performed to examine the effect that circulation by centrifugal pump during mixing has on breakage of ULHS.

  9. Transport properties of molecular junctions

    CERN Document Server

    Zimbovskaya, Natalya A

    2013-01-01

    A comprehensive overview of the physical mechanisms that control electron transport and the characteristics of metal-molecule-metal (MMM) junctions is presented. As far as possible, methods and formalisms presented elsewhere to analyze electron transport through molecules are avoided. This title introduces basic concepts—a description of the electron transport through molecular junctions—and briefly describes relevant experimental methods. Theoretical methods commonly used to analyze the electron transport through molecules are presented. Various effects that manifest in the electron transport through MMMs, as well as the basics of density-functional theory and its applications to electronic structure calculations in molecules are presented. Nanoelectronic applications of molecular junctions and similar systems are discussed as well. Molecular electronics is a diverse and rapidly growing field. Transport Properties of Molecular Junctions presents an up-to-date survey of the field suitable for researchers ...

  10. Aseismic Transform Fault Slip at the Mendocino Triple Junction From Characteristically Repeating Earthquakes

    Science.gov (United States)

    Materna, Kathryn; Taira, Taka'aki; Bürgmann, Roland

    2018-01-01

    The Mendocino Triple Junction (MTJ), at the northern terminus of the San Andreas Fault system, is an actively deforming plate boundary region with poorly constrained estimates of seismic coupling on most offshore fault surfaces. Characteristically repeating earthquakes provide spatial and temporal descriptions of aseismic creep at the MTJ, including on the oceanic transform Mendocino Fault Zone (MFZ) as it subducts beneath North America. Using a dataset of earthquakes from 2008 to 2017, we find that the easternmost segment of the MFZ displays creep during this period at about 65% of the long-term slip rate. We also find creep at slower rates on the shallower strike-slip interface between the Pacific plate and the North American accretionary wedge, as well as on a fault that accommodates Gorda subplate internal deformation. After a nearby M5.7 earthquake in 2015, we observe a possible decrease in aseismic slip on the near-shore MFZ that lasts from 2015 to at least early 2017.

  11. Spatial inhomogeneous barrier heights at graphene/semiconductor Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant

    Graphene, a semimetal with linear energy dispersion, forms Schottky junction when interfaced with a semiconductor. This dissertation presents temperature dependent current-voltage and scanning tunneling microscopy/spectroscopy (STM/S) measurements performed on graphene Schottky junctions formed with both three and two dimensional semiconductors. To fabricate Schottky junctions, we transfer chemical vapor deposited monolayer graphene onto Si- and C-face SiC, Si, GaAs and MoS2 semiconducting substrates using polymer assisted chemical method. We observe three main type of intrinsic spatial inhomogeneities, graphene ripples, ridges and semiconductor steps in STM imaging that can exist at graphene/semiconductor junctions. Tunneling spectroscopy measurements reveal fluctuations in graphene Dirac point position, which is directly related to the Schottky barrier height. We find a direct correlation of Dirac point variation with the topographic undulations of graphene ripples at the graphene/SiC junction. However, no such correlation is established at graphene/Si and Graphene/GaAs junctions and Dirac point variations are attributed to surface states and trapped charges at the interface. In addition to graphene ripples and ridges, we also observe atomic scale moire patterns at graphene/MoS2 junction due to van der Waals interaction at the interface. Periodic topographic modulations due to moire pattern do not lead to local variation in graphene Dirac point, indicating that moire pattern does not contribute to fluctuations in electronic properties of the heterojunction. We perform temperature dependent current-voltage measurements to investigate the impact of topographic inhomogeneities on electrical properties of the Schottky junctions. We observe temperature dependence in junction parameters, such as Schottky barrier height and ideality factor, for all types of Schottky junctions in forward bias measurements. Standard thermionic emission theory which assumes a perfect

  12. Consumers' conceptualization of ultra-processed foods.

    Science.gov (United States)

    Ares, Gastón; Vidal, Leticia; Allegue, Gimena; Giménez, Ana; Bandeira, Elisa; Moratorio, Ximena; Molina, Verónika; Curutchet, María Rosa

    2016-10-01

    Consumption of ultra-processed foods has been associated with low diet quality, obesity and other non-communicable diseases. This situation makes it necessary to develop educational campaigns to discourage consumers from substituting meals based on unprocessed or minimally processed foods by ultra-processed foods. In this context, the aim of the present work was to investigate how consumers conceptualize the term ultra-processed foods and to evaluate if the foods they perceive as ultra-processed are in concordance with the products included in the NOVA classification system. An online study was carried out with 2381 participants. They were asked to explain what they understood by ultra-processed foods and to list foods that can be considered ultra-processed. Responses were analysed using inductive coding. The great majority of the participants was able to provide an explanation of what ultra-processed foods are, which was similar to the definition described in the literature. Most of the participants described ultra-processed foods as highly processed products that usually contain additives and other artificial ingredients, stressing that they have low nutritional quality and are unhealthful. The most relevant products for consumers' conceptualization of the term were in agreement with the NOVA classification system and included processed meats, soft drinks, snacks, burgers, powdered and packaged soups and noodles. However, some of the participants perceived processed foods, culinary ingredients and even some minimally processed foods as ultra-processed. This suggests that in order to accurately convey their message, educational campaigns aimed at discouraging consumers from consuming ultra-processed foods should include a clear definition of the term and describe some of their specific characteristics, such as the type of ingredients included in their formulation and their nutritional composition. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. Sex Difference in Draft-Legal Ultra-Distance Events - A Comparison between Ultra-Swimming and Ultra-Cycling.

    Science.gov (United States)

    Salihu, Lejla; Rüst, Christoph Alexander; Rosemann, Thomas; Knechtle, Beat

    2016-04-30

    Recent studies reported that the sex difference in performance in ultra-endurance sports such as swimming and cycling changed over the years. However, the aspect of drafting in draft-legal ultra-endurance races has not yet been investigated. This study investigates the sex difference in ultra-swimming and ultra-cycling draft-legal races where drafting - swimming or cycling behind other participants to save energy and have more power at the end of the race to overtake them, is allowed. The change in performance of the annual best and the annual three best in an ultra-endurance swimming race (16-km 'Faros Swim Marathon') over 38 years and in a 24-h ultra-cycling race ('World Cycling Race') over 13 years were compared and analysed with respect to sex difference. Furthermore, performances of the fastest female and male finishers ever were compared. In the swimming event, the sex difference of the annual best male and female decreased non-significantly (P = 0.262) from 5.3% (1976) to 1.0% (2013). The sex gap of speed in the annual three fastest swimmers decreased significantly (P = 0.043) from 5.9 ± 1.6% (1979) to 4.7 ± 3.1% (2013). In the cycling event, the difference in cycling speed between the annual best male and female decreased significantly (P = 0.026) from 33.31% (1999) to 10.89% (2011). The sex gap of speed in the annual three fastest decreased significantly (P = 0.001) from 32.9 ± 0.6% (1999) to 16.4 ± 5.9% (2011). The fastest male swimmer ever (swimming speed 5.3 km/h, race time: 03:01:55 h:min:s) was 1.5% faster than the fastest female swimmer (swimming speed 5.2 km/h, race time: 03:04:09 h:min:s). The three fastest male swimmers ever (mean 5.27 ± 0.13 km/h) were 4.4% faster than the three fastest female swimmers (mean 5.05 ± 0.20 km/h) (P swimming and cycling, the sex difference in the annual top and annual top three swimmers and cyclists decreased (i.e. non-linearly in swimmers and linearly in cyclists) over the years. The sex difference of the

  14. Junction Potentials Bias Measurements of Ion Exchange Membrane Permselectivity.

    Science.gov (United States)

    Kingsbury, Ryan S; Flotron, Sophie; Zhu, Shan; Call, Douglas F; Coronell, Orlando

    2018-04-17

    Ion exchange membranes (IEMs) are versatile materials relevant to a variety of water and waste treatment, energy production, and industrial separation processes. The defining characteristic of IEMs is their ability to selectively allow positive or negative ions to permeate, which is referred to as permselectivity. Measured values of permselectivity that equal unity (corresponding to a perfectly selective membrane) or exceed unity (theoretically impossible) have been reported for cation exchange membranes (CEMs). Such nonphysical results call into question our ability to correctly measure this crucial membrane property. Because weighing errors, temperature, and measurement uncertainty have been shown to not explain these anomalous permselectivity results, we hypothesized that a possible explanation are junction potentials that occur at the tips of reference electrodes. In this work, we tested this hypothesis by comparing permselectivity values obtained from bare Ag/AgCl wire electrodes (which have no junction) to values obtained from single-junction reference electrodes containing two different electrolytes. We show that permselectivity values obtained using reference electrodes with junctions were greater than unity for CEMs. In contrast, electrodes without junctions always produced permselectivities lower than unity. Electrodes with junctions also resulted in artificially low permselectivity values for AEMs compared to electrodes without junctions. Thus, we conclude that junctions in reference electrodes introduce two biases into results in the IEM literature: (i) permselectivity values larger than unity for CEMs and (ii) lower permselectivity values for AEMs compared to those for CEMs. These biases can be avoided by using electrodes without a junction.

  15. On simulation of local fluxes in molecular junctions

    Science.gov (United States)

    Cabra, Gabriel; Jensen, Anders; Galperin, Michael

    2018-05-01

    We present a pedagogical review of the current density simulation in molecular junction models indicating its advantages and deficiencies in analysis of local junction transport characteristics. In particular, we argue that current density is a universal tool which provides more information than traditionally simulated bond currents, especially when discussing inelastic processes. However, current density simulations are sensitive to the choice of basis and electronic structure method. We note that while discussing the local current conservation in junctions, one has to account for the source term caused by the open character of the system and intra-molecular interactions. Our considerations are illustrated with numerical simulations of a benzenedithiol molecular junction.

  16. Function and application of ultra thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sasabe, Hiroyuki

    1988-02-01

    A film 10-100mm thick which is strong dynamically to some extent and has possibility to manifest fuctions of high degree different from the nature extrapolated from the normal thin film is called an ultra thin film. As an example of its concrete application, there is an electro-luminescence element which is made by laminating 5 layers of LB films of poly-L-phenylalanine on a n-GaP and has vapor-deposited gold electrodes. When voltage of 5V is imposed to it, light emission of 565nm can be observed and the emission efficiency of 2% is obtained. Besides, it has an excellent stability through the lapse of time. There is also a junction element and the ion concentration injected into macromolecule films of this element has a Gaussian distribution from the surface towards the direction of depth. Accordingly, the most active domain in terms of semiconductor as the result of doping is the location in the neighborhood of the peak. Furthermore, a photo memory is also proposed. It is applied to the artificial hemoglobine which is made of LB films, suggesting the feasibility of creating the artificial protein capable of functioning in the conditions in which the natural protein is unable to function. (5 figs, 1 tab, 7 refs)

  17. Shunted-Josephson-junction model. I. The autonomous case

    DEFF Research Database (Denmark)

    Belykh, V. N.; Pedersen, Niels Falsig; Sørensen, O. H.

    1977-01-01

    The shunted-Josephson-junction model: the parallel combination of a capacitance, a phase-dependent conductance, and an ideal junction element biased by a constant current, is discussed for arbitrary values of the junction parameters. The main objective is to provide a qualitative understanding...... current-voltage curves are presented. The case with a time-dependent monochromatic bias current is treated in a similar fashion in the companion paper....

  18. Joint diseases: from connexins to gap junctions.

    Science.gov (United States)

    Donahue, Henry J; Qu, Roy W; Genetos, Damian C

    2017-12-19

    Connexons form the basis of hemichannels and gap junctions. They are composed of six tetraspan proteins called connexins. Connexons can function as individual hemichannels, releasing cytosolic factors (such as ATP) into the pericellular environment. Alternatively, two hemichannel connexons from neighbouring cells can come together to form gap junctions, membrane-spanning channels that facilitate cell-cell communication by enabling signalling molecules of approximately 1 kDa to pass from one cell to an adjacent cell. Connexins are expressed in joint tissues including bone, cartilage, skeletal muscle and the synovium. Indicative of their importance as gap junction components, connexins are also known as gap junction proteins, but individual connexin proteins are gaining recognition for their channel-independent roles, which include scaffolding and signalling functions. Considerable evidence indicates that connexons contribute to the function of bone and muscle, but less is known about the function of connexons in other joint tissues. However, the implication that connexins and gap junctional channels might be involved in joint disease, including age-related bone loss, osteoarthritis and rheumatoid arthritis, emphasizes the need for further research into these areas and highlights the therapeutic potential of connexins.

  19. Electrochemically assisted mechanically controllable break junction studies on the stacking configurations of oligo(phenylene ethynylene)s molecular junctions

    International Nuclear Information System (INIS)

    Zheng, Jue-Ting; Yan, Run-Wen; Tian, Jing-Hua; Liu, Jun-Yang; Pei, Lin-Qi; Wu, De-Yin; Dai, Ke; Yang, Yang; Jin, Shan

    2016-01-01

    Highlights: • I-V characteristics of a series of oligo(phenylene ethynylene)s molecular junctions were measured. • Conductance values were found to be dependent on molecular length and substituent group. • The measured low conductance values were explained by theoretical calculations. • EC-MCBJ is feasible to fabricate and characterize molecular junctions. - Abstract: We demonstrate an electrochemically assisted mechanically controllable break junction (EC-MCBJ) approach for current-voltage characteristic (I-V curve) measurements of metal/molecule/metal junctions. A series of oligo(phenylene ethynylene)s compounds (OPEs), including those involving electron withdrawing substituent group and different backbone lengths, had been successfully designed, synthesized, and placed onto the fabricated nanogap to form molecular junctions. The observed evolution in the measured conductances of OPEs indicates that there is a dependence of conductance on molecular length and substituent group. Compared with those extracted from conductance histogram construction, the conductances of OPEs measured from I-V curves are considerably lower. Based on the transmission spectra of OPEs that calculated by density functional theory (DFT) combined with non-equilibrium Green’s function (NEGF) method, this difference was attributed to our distinct experimental operation, which may give rise to a stacking configuration of two OPE molecules.

  20. ALTERNATIVE MATERIALS FOR RAMP-EDGE SNS JUNCTIONS

    International Nuclear Information System (INIS)

    Jia, Q.; Fan, Y.; Gim, Y.

    1999-01-01

    We report on the processing optimization and fabrication of ramp-edge high-temperature superconducting junctions by using alternative materials for both superconductor electrodes and normal-metal barrier. By using Ag-doped YBa 2 Cu 3 O 7-x (Ag:YBCO) as electrodes and a cation-modified compound of (Pr y Gd 0.6-y )Ca 0.4 Ba 1.6 La 0.4 Cu 3 O 7 (y = 0.4, 0.5, and 0.6) as a normal-metal barrier, high-temperature superconducting Josephson junctions have been fabricated in a ramp-edge superconductor/normal-metal/superconductor (SNS) configuration. By using Ag:YBCO as electrodes, we have found that the processing controllability /reproducibility and the stability of the SNS junctions are improved substantially. The junctions fabricated with these alternative materials show well-defined RSJ-like current vs voltage characteristics at liquid nitrogen temperature

  1. Electron-beam damaged high-temperature superconductor Josephson junctions

    International Nuclear Information System (INIS)

    Pauza, A.J.; Booij, W.E.; Herrmann, K.; Moore, D.F.; Blamire, M.G.; Rudman, D.A.; Vale, L.R.

    1997-01-01

    Results are presented on the fabrication and characterization of high critical temperature Josephson junctions in thin films of YBa 2 Cu 3 O 7-δ produced by the process of focused electron-beam irradiation using 350 keV electrons. The junctions so produced have uniform spatial current densities, can be described in terms of the resistive shunted junction model, and their current densities can be tailored for a given operating temperature. The physical properties of the damaged barrier can be described as a superconducting material of either reduced or zero critical temperature (T c ), which has a length of ∼15nm. The T c reduction is caused primarily by oxygen Frenkel defects in the Cu - O planes. The large beam currents used in the fabrication of the junctions mean that the extent of the barrier is limited by the incident electron-beam diameter, rather than by scattering within the film. The properties of the barrier can be calculated using a superconductor/normal/superconductor (SNS) junction model with no boundary resistance. From the SNS model, we can predict the scaling of the critical current resistance (I c R n ) product and gain insight into the factors controlling the junction properties, T c , and reproducibility. From the measured I c R n scaling data, we can predict the I c R n product of a junction at a given operating temperature with a given current density. I c R n products of ∼2mV can be achieved at 4.2 K. The reproducibility of several junctions in a number of samples can be characterized by the ratio of the maximum-to-minimum critical currents on the same substrate of less than 1.4. Stability over several months has been demonstrated at room and refrigerator temperatures (297 and 281 K) for junctions that have been initially over damaged and then annealed at temperatures ∼380K. (Abstract Truncated)

  2. Shot noise in YBCO bicrystal Josephson junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.

    2003-01-01

    We measured spectral noise density in YBCO symmetric bicrystal Josephson junctions on sapphire substrates at bias voltages up to 100 mV and T 4.2 K. Normal state resistance of the Josephson junctions, R-N = 20-90 Omega and ICRN up to 2.2 mV have been observed in the experimental samples. Noise...... may explain the experimentally measured linewidth broadening of Josephson oscillations at mm and submm wave frequencies in high-Tc superconducting junctions. Experimental results are discussed in terms of bound states existing at surfaces of d-wave superconducting electrodes....

  3. The chemistry of ultra-low concentrations

    International Nuclear Information System (INIS)

    Vertes, Attila; Kiss, Istvan

    1987-01-01

    Methods for the separation and enrichment of radionuclides in the ultra-low concentration range (coprecipitation, adsorption of radioactive substances on crystals) are disscussed in this chapter of the textbook. The properties and behaviour of ultra-dilute solutions, radiocolloids and the electrochemistry of ultra-dilute solution are also overviewed

  4. Intraepithelial lymphocytes express junctional molecules in murine small intestine

    International Nuclear Information System (INIS)

    Inagaki-Ohara, Kyoko; Sawaguchi, Akira; Suganuma, Tatsuo; Matsuzaki, Goro; Nawa, Yukifumi

    2005-01-01

    Intestinal intraepithelial lymphocytes (IEL) that reside at basolateral site regulate the proliferation and differentiation of epithelial cells (EC) for providing a first line of host defense in intestine. However, it remains unknown how IEL interact and communicate with EC. Here, we show that IEL express junctional molecules like EC. We identified mRNA expression of the junctional molecules in IEL such as zonula occludens (ZO)-1, occludin and junctional adhesion molecule (JAM) (tight junction), β-catenin and E-cadherin (adherens junction), and connexin26 (gap junction). IEL constitutively expressed occludin and E-cadherin at protein level, while other T cells in the thymus, spleen, liver, mesenteric lymph node, and Peyer's patches did not. γδ IEL showed higher level of these expressions than αβ IEL. The expression of occludin was augmented by anti-CD3 Ab stimulation. These results suggest the possibility of a novel role of IEL concerning epithelial barrier and communication between IEL and EC

  5. Affordance-based individuation of junctions in Open Street Map

    Directory of Open Access Journals (Sweden)

    Simon Scheider

    2012-06-01

    Full Text Available We propose an algorithm that can be used to identify automatically the subset of street segments of a road network map that corresponds to a junction. The main idea is to use turn-compliant locomotion affordances, i.e., restricted patterns of supported movement, in order to specify junctions independently of their data representation, and in order to motivate tractable individuation and classification strategies. We argue that common approaches based solely on geometry or topology of the street segment graph are useful but insufficient proxies. They miss certain turn restrictions essential to junctions. From a computational viewpoint, the main challenge of affordance-based individuation of junctions lies in its complex recursive definition. In this paper, we show how Open Street Map data can be interpreted into locomotion affordances, and how the recursive junction definition can be translated into a deterministic algorithm. We evaluate this algorithm by applying it to small map excerpts in order to delineate the contained junctions.

  6. STIM proteins and the endoplasmic reticulum-plasma membrane junctions.

    Science.gov (United States)

    Carrasco, Silvia; Meyer, Tobias

    2011-01-01

    Eukaryotic organelles can interact with each other through stable junctions where the two membranes are kept in close apposition. The junction that connects the endoplasmic reticulum to the plasma membrane (ER-PM junction) is unique in providing a direct communication link between the ER and the PM. In a recently discovered signaling process, STIM (stromal-interacting molecule) proteins sense a drop in ER Ca(2+) levels and directly activate Orai PM Ca(2+) channels across the junction space. In an inverse process, a voltage-gated PM Ca(2+) channel can directly open ER ryanodine-receptor Ca(2+) channels in striated-muscle cells. Although ER-PM junctions were first described 50 years ago, their broad importance in Ca(2+) signaling, as well as in the regulation of cholesterol and phosphatidylinositol lipid transfer, has only recently been realized. Here, we discuss research from different fields to provide a broad perspective on the structures and unique roles of ER-PM junctions in controlling signaling and metabolic processes.

  7. Morphological variation of the kidney secondary to junctional parenchyma on ultrasound

    International Nuclear Information System (INIS)

    Lee, Ji Yoon; Park, Byeong Ho; Nam, Kyeong Jin; Choi, Jong Cheol; Koo, Bong Sig; Kim, Jou Yeoun; Ahn, Seung Eon; Lee, Yung Il

    1996-01-01

    To evaluate the prevalance of morphological variation of the kidney secondary to junctional parenchyma, as well as to analyze the ultrasonographic features of junctional parenchyma. Two hundred and eighty two kidneys of 141 patient without clinical or radiologic evidence of renal disease were prospectively analysed using ultrasound. In all patients, ultrasonograms were obtained in sagittal, coronal and transaxial planes. The kidney was considered to have morphological variation if the ultrasonogram demonstrated junctional parenchymal defect of line ; those showing such variation were classified as one of three types : continuous, discontinuous, or junctional parenchymal line or defect without junctional parenchyma. The prevalance and ultrasonographic features of the kidneys were evaluated. Morphological variation was noted in 71 cases(25%). the continuous type accounted for 54% of these, the discontinuous type for 38%, and junctional parenchymal defect or line without junctional parenchyma for 8%. In all cases, junctional parenchyma was located approximately at the junction of the upper and middle third of the kidney, and had the same echogenecity as the renal cortex. An understanding of the morphological variation of the kidney resulting from junctional renal parenchyma would be helpful in differentiating pseudotumor from true renal neoplasm

  8. Visualizing supercurrents in 0-{pi} ferromagnetic Josephson tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Goldobin, Edward; Guerlich, Christian; Gaber, Tobias; Koelle, Dieter; Kleiner, Reinhold [Physikalisches Institut and Center for Collective Quantum Phenomena, Universitaet Tuebingen (Germany); Weides, Martin; Kohlstedt, Hermann [Institute of Solid State Physics, Reserch Center Juelich (Germany)

    2009-07-01

    So-called 0 and {pi} Josephson junctions can be treated as having positive and negative critical currents. This implies that the same phase shift applied to a Josephson junction causes counterflow of supercurrents in 0 and in {pi} junctions connected in parallel provided they are short in comparison with Josephson penetration depth {lambda}{sub J}. We have fabricated several 0, {pi}, 0-{pi}, 0-{pi}-0 and 20 x (0-{pi}-) planar superconductor-insulator-ferromagnet-superconductor Josephson junctions and studied the spatial supercurrent density distribution j{sub s}(x,y) across the junction area using low temperature scanning electron microscopy. At zero magnetic field we clearly see counterflow of the supercurrents in 0 and {pi} regions. The picture also changes consistently in the applied magnetic field.

  9. Fabrication of magnetic tunnel junctions with epitaxial and textured ferromagnetic layers

    Science.gov (United States)

    Chang, Y. Austin; Yang, Jianhua Joshua

    2008-11-11

    This invention relates to magnetic tunnel junctions and methods for making the magnetic tunnel junctions. The magnetic tunnel junctions include a tunnel barrier oxide layer sandwiched between two ferromagnetic layers both of which are epitaxial or textured with respect to the underlying substrate upon which the magnetic tunnel junctions are grown. The magnetic tunnel junctions provide improved magnetic properties, sharper interfaces and few defects.

  10. Spin, Vibrations and Radiation in Superconducting Junctions

    NARCIS (Netherlands)

    Padurariu, C.

    2013-01-01

    This thesis presents the theoretical study of superconducting transport in several devices based on superconducting junctions. The important feature of these devices is that the transport properties of the junction are modified by the interaction with another physical system integrated in the

  11. Regulation of Tight Junctions in Upper Airway Epithelium

    Directory of Open Access Journals (Sweden)

    Takashi Kojima

    2013-01-01

    Full Text Available The mucosal barrier of the upper respiratory tract including the nasal cavity, which is the first site of exposure to inhaled antigens, plays an important role in host defense in terms of innate immunity and is regulated in large part by tight junctions of epithelial cells. Tight junction molecules are expressed in both M cells and dendritic cells as well as epithelial cells of upper airway. Various antigens are sampled, transported, and released to lymphocytes through the cells in nasal mucosa while they maintain the integrity of the barrier. Expression of tight junction molecules and the barrier function in normal human nasal epithelial cells (HNECs are affected by various stimuli including growth factor, TLR ligand, and cytokine. In addition, epithelial-derived thymic stromal lymphopoietin (TSLP, which is a master switch for allergic inflammatory diseases including allergic rhinitis, enhances the barrier function together with an increase of tight junction molecules in HNECs. Furthermore, respiratory syncytial virus infection in HNECs in vitro induces expression of tight junction molecules and the barrier function together with proinflammatory cytokine release. This paper summarizes the recent progress in our understanding of the regulation of tight junctions in the upper airway epithelium under normal, allergic, and RSV-infected conditions.

  12. Spin-dependent quasiparticle tunneling in junction superconductor-isolator-ferromagnetic

    International Nuclear Information System (INIS)

    Shlapak, Yu.V.; Shaternik, V.E.; Rudenko, E.M.

    2001-01-01

    The influence of Andreev reflection of quasiparticles in transparent tunnel junctions of superconductor-isolator-ferromagnetic on electric-current transport is studied within the framework of the Blonder-Tinkham-Klapwijk (BTK) model. It's obtained that current and signal-to-noise ratio can be increased for the memory cell by using in it the double-barrier tunnel junction ferromagnetic-isolator-superconductor-isolator-ferromagnetic instead off the usual tunnel junction ferromagnetic-isolator-ferromagnetic. The evolution of non-linear (tunnel-type) current-voltage characteristics with increasing of the junction transparency is described. (orig.)

  13. HF Radar Sea-echo from Shallow Water

    Directory of Open Access Journals (Sweden)

    Josh Kohut

    2008-08-01

    Full Text Available HF radar systems are widely and routinely used for the measurement of ocean surface currents and waves. Analysis methods presently in use are based on the assumption of infinite water depth, and may therefore be inadequate close to shore where the radar echo is strongest. In this paper, we treat the situation when the radar echo is returned from ocean waves that interact with the ocean floor. Simulations are described which demonstrate the effect of shallow water on radar sea-echo. These are used to investigate limits on the existing theory and to define water depths at which shallow-water effects become significant. The second-order spectral energy increases relative to the first-order as the water depth decreases, resulting in spectral saturation when the waveheight exceeds a limit defined by the radar transmit frequency. This effect is particularly marked for lower radar transmit frequencies. The saturation limit on waveheight is less for shallow water. Shallow water affects second-order spectra (which gives wave information far more than first-order (which gives information on current velocities, the latter being significantly affected only for the lowest radar transmit frequencies for extremely shallow water. We describe analysis of radar echo from shallow water measured by a Rutgers University HF radar system to give ocean wave spectral estimates. Radar-derived wave height, period and direction are compared with simultaneous shallow-water in-situ measurements.

  14. Ileocolic junction resection in dogs and cats: 18 cases.

    Science.gov (United States)

    Fernandez, Yordan; Seth, Mayank; Murgia, Daniela; Puig, Jordi

    2017-12-01

    There is limited veterinary literature about dogs or cats with ileocolic junction resection and its long-term follow-up. To evaluate the long-term outcome in a cohort of dogs and cats that underwent resection of the ileocolic junction without extensive (≥50%) small or large bowel resection. Medical records of dogs and cats that had the ileocolic junction resected were reviewed. Follow-up information was obtained either by telephone interview or e-mail correspondence with the referring veterinary surgeons. Nine dogs and nine cats were included. The most common cause of ileocolic junction resection was intussusception in dogs (5/9) and neoplasia in cats (6/9). Two dogs with ileocolic junction lymphoma died postoperatively. Only 2 of 15 animals, for which long-term follow-up information was available, had soft stools. However, three dogs with suspected chronic enteropathy required long-term treatment with hypoallergenic diets alone or in combination with medical treatment to avoid the development of diarrhoea. Four of 6 cats with ileocolic junction neoplasia were euthanised as a consequence of progressive disease. Dogs and cats undergoing ileocolic junction resection and surviving the perioperative period may have a good long-term outcome with mild or absent clinical signs but long-term medical management may be required.

  15. Antireflection coating design for series interconnected multi-junction solar cells

    International Nuclear Information System (INIS)

    Aiken, Daniel J.

    1999-01-01

    AR coating design for multi-junction solar cells can be more challenging than in the single junction case. Reasons for this are discussed. Analytical expressions used to optimize AR coatings for single junction solar cells are extended for use in monolithic, series interconnected multi-junction solar cell AR coating design. The result is an analytical expression which relates the solar cell performance (through J(sub SC)) directly to the AR coating design through the device reflectance. It is also illustrated how AR coating design can be used to provide an additional degree of freedom for current matching multi-junction devices

  16. Holographic s-wave and p-wave Josephson junction with backreaction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yong-Qiang; Liu, Shuai [Institute of Theoretical Physics, Lanzhou University,Lanzhou 730000, People’s Republic of (China)

    2016-11-22

    In this paper, we study the holographic models of s-wave and p-wave Josephoson junction away from probe limit in (3+1)-dimensional spacetime, respectively. With the backreaction of the matter, we obtained the anisotropic black hole solution with the condensation of matter fields. We observe that the critical temperature of Josephoson junction decreases with increasing backreaction. In addition to this, the tunneling current and condenstion of Josephoson junction become smaller as backreaction grows larger, but the relationship between current and phase difference still holds for sine function. Moreover, condenstion of Josephoson junction deceases with increasing width of junction exponentially.

  17. Functional anatomy of the human ureterovesical junction

    NARCIS (Netherlands)

    Roshani, H.; Dabhoiwala, N. F.; Verbeek, F. J.; Lamers, W. H.

    1996-01-01

    BACKGROUND: The valve function of the ureterovesical-junction (UVJ) is responsible for protection of the low pressure upper urinary tract from the refluxing of urine from the bladder. Controversy about the microanatomy of the human ureterovesical-junction persists. METHODS: Ten (3 male and 7 female)

  18. Performance Analysis of High-Speed Deep/Shallow Recessed Hybrid Bearing

    Directory of Open Access Journals (Sweden)

    Lei Wang

    2013-01-01

    Full Text Available The present paper proposes a theoretical analysis of the performance of deep/shallow recessed hybrid bearing. It is intended that, on the basis of the numerical results drawn from this study, appropriate shallow recess depth and width can be determined for use in the bearing design process. By adopting bulk flow theory, the turbulent Reynolds equation and energy equation are modified and solved numerically including concentrated inertia effects at the recess edge with different depth and width of shallow recess. The results indicate that the load capacity, drag torque increases as the depth of shallow recess is shallower and the width ratio (half angle of deep recess versus half angle of shallow recess is smaller. In contrast, the flow rate decreases as the depth of shallow recess is shallower and the width ratio is smaller. Nevertheless, the appropriate design of the depth and width of shallow recess might well induce the performance of high-speed deep/shallow recessed hybrid bearing.

  19. Double-well potential in annular Josephson junction

    International Nuclear Information System (INIS)

    Shaju, P.D.; Kuriakose, V.C.

    2004-01-01

    A double-well potential suitable for quantum-coherent vortex tunnelling can be created in an annular Josephson junction by inserting a microshort in the junction and by applying an in-plane dc magnetic field. Analysis shows that the intensity of the magnetic field determines the depth of the potential well and the strength of the microshort controls the potential barrier height while a dc bias across the junction tilts the potential well. At milli-Kelvin temperatures, the system is expected to behave as a quantum two-level system and may be useful in designing vortex qubits

  20. Parametric frequency conversion in long Josephson junctions

    International Nuclear Information System (INIS)

    Irie, F.; Ashihara, S.; Yoshida, K.

    1976-01-01

    Current steps at voltages corresponding to the parametric coupling between an applied r.f. field and junction resonant modes have been observed in long Josephson tunnel junctions in the flux-flow state. The observed periodic variations of the step height due to the applied magnetic field are explained quantitatively by a perturbational analysis using Josephson phase equations. The present study demonstrates that the moving vortex array can serve as a coherent pump wave for signal waves propagating in the barrier region, which indicates, as a result, the possibility of traveling-wave parametric devices with long Josephson tunnel junctions. (author)

  1. Fractional Solitons in Excitonic Josephson Junctions

    Science.gov (United States)

    Su, Jung-Jung; Hsu, Ya-Fen

    The Josephson effect is especially appealing because it reveals macroscopically the quantum order and phase. Here we study this effect in an excitonic Josephson junction: a conjunct of two exciton condensates with a relative phase ϕ0 applied. Such a junction is proposed to take place in the quantum Hall bilayer (QHB) that makes it subtler than in superconductor because of the counterflow of excitonic supercurrent and the interlayer tunneling in QHB. We treat the system theoretically by first mapping it into a pseudospin ferromagnet then describing it by the Landau-Lifshitz-Gilbert equation. In the presence of interlayer tunneling, the excitonic Josephson junction can possess a family of fractional sine-Gordon solitons that resemble the static fractional Josephson vortices in the extended superconducting Josephson junctions. Interestingly, each fractional soliton carries a topological charge Q which is not necessarily a half/full integer but can vary continuously. The resultant current-phase relation (CPR) shows that solitons with Q =ϕ0 / 2 π are the lowest energy states for small ϕ0. When ϕ0 > π , solitons with Q =ϕ0 / 2 π - 1 take place - the polarity of CPR is then switched.

  2. Gravitation at the Josephson Junction

    Directory of Open Access Journals (Sweden)

    Victor Atanasov

    2018-01-01

    Full Text Available A geometric potential from the kinetic term of a constrained to a curved hyperplane of space-time quantum superconducting condensate is derived. An energy conservation relation involving the geometric field at every material point in the superconductor is demonstrated. At a Josephson junction the energy conservation relation implies the possibility of transforming electric energy into geometric field energy, that is, curvature of space-time. Experimental procedures to verify that the Josephson junction can act as a voltage-to-curvature converter are discussed.

  3. The cranial-spinal junction in medulloblastoma: does it matter?

    International Nuclear Information System (INIS)

    Narayana, Ashwatha; Jeswani, Sam; Paulino, Arnold C.

    1999-01-01

    Purpose: Late effects of treatment in children and young adults with medulloblastoma can be influenced by the technique employed in radiating the craniospinal axis. The purpose of this study is to determine whether the placement of the cranial-spinal junction has an impact on dose to the cervical spinal cord and surrounding organs. Methods and Materials: Five patients underwent computed tomography (CT) simulation in the prone position for craniospinal irradiation. A dose of 36 Gy was prescribed to the entire neuraxis. The doses to the cervical spinal cord and surrounding organs were calculated using a cranial-spinal junction at the C1-C2 vertebral interspace (high junction) or at the lowest point in the neck, with exclusion of the shoulders in the lateral cranial fields (low junction).The volume of critical organs at risk, as well as dose to these structures using the cranial and spinal field(s) were outlined and calculated using the CMS FOCUS 3-dimensional treatment planning system. Results: The average dose to the cervical spinal cord was 11.9% higher than the prescribed dose with the low junction, and 6.7% higher with the high junction. However, doses to the thyroid gland, mandible, pharynx, and larynx were increased by an average of 29.6%, 75.8%, 70.6%, and 227.7%, respectively, by the use of the high junction compared to the low junction. Conclusion: A higher dose to the cervical spinal cord can be minimized by using a high junction. However, this would be at the cost of substantially increased doses to surrounding organs such as the thyroid gland, mandible, pharynx, and larynx. This can be critical in children and young adults, where hypothyroidism, mandibular hypoplasia, and development of second malignancies may be a late sequela of radiation therapy

  4. A two-step sealing-and-reinforcement SU8 bonding paradigm for the fabrication of shallow microchannels

    Science.gov (United States)

    Mehboudi, Aryan; Yeom, Junghoon

    2018-03-01

    Adhesive bonding is a key technique to create microfluidic devices when two separate substrates are used to form microchannels. Among many adhesives explored in microchannel fabrication, SU8 has been widely used as an adhesive layer for sealing the microchannel sidewalls. The majority of the available SU8-based bonding methods, however, suffer from the difficulties associated with sealing of two important types of the microchannel architecture: (1) shallow microchannels with small patterns on a large area, and (2) microchannels with ultra-low aspect ratios (e.g. 6 mm in width and 2~μ m in height). In this paper, a new bonding paradigm based upon the low-temperature and low-pressure SU8 bonding, consisting of two steps of sealing using a thin-SU8-coated PET film and bonding reinforcement using a SU8-coated glass slide, is proposed to resolve the aforementioned difficulties. Since it does not need complicated instruments such as a wafer bonding machine and a lamination device, the developed bonding paradigm is convenient and economical. We successfully demonstrate the compatibility of the proposed bonding paradigm with the two microchannel fabrication approaches based on the glass wet etching and the SU8 photo-lithography, where small microchannels with the innermost surfaces fully made of SU8 are obtained. A theoretical model is employed to better investigate the flow characteristics and the structural behavior of the microchannel including the PET film deformation, strain and von Mises stress distributions, bonding strength, etc. Moreover, we demonstrate the fabrication of the multi-height deep-shallow microchannel sidewalls and their sealing using the SU8-coated PET film. Finally, as a proof-of-concept device, a microfluidic filter consisting of the double-height deep-shallow microchannel is fabricated for separation of 3 µm and 10 µm particles.

  5. Shallow moonquakes - How they compare with earthquakes

    Science.gov (United States)

    Nakamura, Y.

    1980-01-01

    Of three types of moonquakes strong enough to be detectable at large distances - deep moonquakes, meteoroid impacts and shallow moonquakes - only shallow moonquakes are similar in nature to earthquakes. A comparison of various characteristics of moonquakes with those of earthquakes indeed shows a remarkable similarity between shallow moonquakes and intraplate earthquakes: (1) their occurrences are not controlled by tides; (2) they appear to occur in locations where there is evidence of structural weaknesses; (3) the relative abundances of small and large quakes (b-values) are similar, suggesting similar mechanisms; and (4) even the levels of activity may be close. The shallow moonquakes may be quite comparable in nature to intraplate earthquakes, and they may be of similar origin.

  6. Chirality effect in disordered graphene ribbon junctions

    International Nuclear Information System (INIS)

    Long Wen

    2012-01-01

    We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

  7. First results on NUV-SiPMs at FBK

    Energy Technology Data Exchange (ETDEWEB)

    Ferri, A., E-mail: aleferri@fbk.eu [Fondazione Bruno Kessler (FBK-IRST), Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy); Gola, A.; Piemonte, C.; Pro, T.; Serra, N.; Tarolli, A.; Zorzi, N. [Fondazione Bruno Kessler (FBK-IRST), Centro per i Materiali e i Microsistemi, Via Sommarive, 18, I-38100 Povo di Trento (Italy)

    2013-08-01

    In this paper we show selected results on the first release of Near Ultra Violet SiPM technology (NUV-SiPM) produced at FBK. In particular, we focus our attention on the photo-detection efficiency (PDE) performance. The PDE in the near-UV part of the light spectrum is mainly limited by the quantum efficiency term since the photo-generation takes place in a very shallow region of the silicon. Thus, besides using a p+-on-n junction configuration to have an avalanche triggered by the electrons, we need to implement a very shallow p+ layer. In this context, we will show that our NUV-SiPM technology features a quantum efficiency higher than 80% in the measured range between 360 and 420 nm. This allows to reach a PDE of about 30% at 9 V over-voltage on a SPAD featuring 50×50μm{sup 2} cell size and 45% fill factor. We will also show other important features of the device such as noise, breakdown voltage temperature dependence and single-cell response uniformity to prove its functionality.

  8. Junction depth dependence of breakdown in silicon detector diodes

    International Nuclear Information System (INIS)

    Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

    1996-01-01

    The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

  9. The fallopian tube-peritoneal junction: a potential site of carcinogenesis.

    Science.gov (United States)

    Seidman, Jeffrey D; Yemelyanova, Anna; Zaino, Richard J; Kurman, Robert J

    2011-01-01

    Junctions between different types of epithelia are hot spots for carcinogenesis, but the junction of the peritoneal mesothelium with the fallopian tubal epithelium, the tubal-peritoneal junction, has not been characterized earlier. A total of 613 junctional foci in 228 fallopian tube specimens from 182 patients who underwent surgery for a variety of indications, including 27 risk-reducing salpingo-oophorectomy specimens, were studied. Edema, congestion, and dilated lymphatic channels were commonly present. Transitional metaplasia was found at the junction in 20% of patients and mesothelial hyperplasia in 17%. Inflammation at the junction was seen predominantly in patients with salpingitis, torsion, or tubal pregnancy. Ovarian-type stroma was found at the junction in 5% of patients, and was found elsewhere in the tubal lamina propria in an additional 27% of patients. Findings in risk-reducing salpingo-oophorectomy specimens in women with BRCA mutations, a personal history of breast cancer, and/or a family history of breast/ovarian cancer were similar to those in controls. Transitional metaplasia specifically localizes to this junction, and is the probable source of Walthard cell nests. The recently highlighted significance of fimbrial tubal epithelium in the origin of serous ovarian carcinomas and a study suggesting that mucinous and Brenner tumors may arise from transitional-type epithelium in this location suggest that the tubal-peritoneal junction may play a role in the development of these tumors. This is the first comprehensive description of a hitherto unrecognized transitional zone in the adnexa.

  10. Regulation of Endothelial Adherens Junctions by Tyrosine Phosphorylation

    Science.gov (United States)

    Adam, Alejandro Pablo

    2015-01-01

    Endothelial cells form a semipermeable, regulated barrier that limits the passage of fluid, small molecules, and leukocytes between the bloodstream and the surrounding tissues. The adherens junction, a major mechanism of intercellular adhesion, is comprised of transmembrane cadherins forming homotypic interactions between adjacent cells and associated cytoplasmic catenins linking the cadherins to the cytoskeleton. Inflammatory conditions promote the disassembly of the adherens junction and a loss of intercellular adhesion, creating openings or gaps in the endothelium through which small molecules diffuse and leukocytes transmigrate. Tyrosine kinase signaling has emerged as a central regulator of the inflammatory response, partly through direct phosphorylation and dephosphorylation of the adherens junction components. This review discusses the findings that support and those that argue against a direct effect of cadherin and catenin phosphorylation in the disassembly of the adherens junction. Recent findings indicate a complex interaction between kinases, phosphatases, and the adherens junction components that allow a fine regulation of the endothelial permeability to small molecules, leukocyte migration, and barrier resealing. PMID:26556953

  11. Two-dimensional non-volatile programmable p-n junctions

    Science.gov (United States)

    Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing

    2017-09-01

    Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.

  12. Thermionic refrigeration at CNT-CNT junctions

    Science.gov (United States)

    Li, C.; Pipe, K. P.

    2016-10-01

    Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

  13. Response of high Tc superconducting Josephson junction to nuclear radiation

    International Nuclear Information System (INIS)

    Ding Honglin; Zhang Wanchang; Zhang Xiufeng

    1992-10-01

    The development of nuclear radiation detectors and research on high T c superconducting nuclear radiation detectors are introduced. The emphases are the principle of using thin-film and thick-film Josephson junctions (bridge junction) based on high T c YBCO superconductors to detect nuclear radiation, the fabrication of thin film and thick-film Josephson junction, and response of junction to low energy gamma-rays of 59.5 keV emitted from 241 Am and beta-rays of 546 keV. The results show that a detector for measuring nuclear radiation spectrum made of high T c superconducting thin-film or thick-film, especially, thick-film Josephson junction, certainly can be developed

  14. ‘Gap Junctions and Cancer: Communicating for 50 Years’

    Science.gov (United States)

    Aasen, Trond; Mesnil, Marc; Naus, Christian C.; Lampe, Paul D.; Laird, Dale W.

    2017-01-01

    Fifty years ago, tumour cells were found to lack electrical coupling, leading to the hypothesis that loss of direct intercellular communication is commonly associated with cancer onset and progression. Subsequent studies linked this phenomenon to gap junctions composed of connexin proteins. While many studies support the notion that connexins are tumour suppressors, recent evidence suggests that, in some tumour types, they may facilitate specific stages of tumour progression through both junctional and non-junctional signalling pathways. This Timeline article highlights the milestones connecting gap junctions to cancer, and underscores important unanswered questions, controversies and therapeutic opportunities in the field. PMID:27782134

  15. Ultra-orthodox Jewish Women Go to Work

    Directory of Open Access Journals (Sweden)

    Foscarini, Giorgia

    2014-12-01

    Full Text Available In the last three decades the ultra-orthodox community in Israel has experienced great changes in its internal social functioning. More specifically, these developments were linked to the education of ultra-orthodox women. Through an accurate review of the existing literature and a series of in-depth interviews with Israeli scholars, rabbis, educators and women of the ultra-orthodox community in Jerusalem, it was found that the introduction of new vocational and academic training tracks in women's education, is gradually changing the internal social structure of the ultra-orthodox family and community. The main consequence is expressed in a renegotiation of gender roles within the ultra-orthodox community and in a subversion of the traditional patriarchal framework. As a result of their participation in the labor market and in higher education institutions, women are more and more exposed to the Israeli secular culture, introducing in the traditional and segregated ultra-orthodox community customs typically modern, narrowing the gap between the ultra-orthodox community and the mainstream Israeli society.

  16. Dynamics of fractional vortices in long Josephson junctions

    International Nuclear Information System (INIS)

    Gaber, Tobias

    2007-01-01

    In this thesis static and dynamic properties of fractional vortices in long Josephson junctions are investigated. Fractional vortices are circulating supercurrents similar to the well-known Josephson fluxons. Yet, they show the distinguishing property of carrying only a fraction of the magnetic flux quantum. Fractional vortices are interesting non-linear objects. They spontaneously appear and are pinned at the phase discontinuity points of so called 0-κ junctions but can be bend or flipped by external forces like bias currents or magnetic fields. 0-κ junctions and fractional vortices are generalizations of the well-known 0-π junctions and semifluxons, where not only phase jumps of pi but arbitrary values denoted by kappa are considered. By using so-called artificial 0-κ junctions that are based on standard Nb-AlO x -Nb technology the classical dynamics of fractional vortices has been investigated experimentally for the very first time. Here, half-integer zero field steps could be observed. These voltage steps on the junction's current-voltage characteristics correspond to the periodic flipping/hopping of fractional vortices. In addition, the oscillatory eigenmodes of fractional vortices were investigated. In contrast to fluxons fractional vortices have an oscillatory eigenmode with a frequency within the plasma gap. Using resonance spectroscopy the dependence of the eigenmode frequency on the flux carried by the vortex and an applied bias current was determined. (orig.)

  17. Functional Molecular Junctions Derived from Double Self-Assembled Monolayers.

    Science.gov (United States)

    Seo, Sohyeon; Hwang, Eunhee; Cho, Yunhee; Lee, Junghyun; Lee, Hyoyoung

    2017-09-25

    Information processing using molecular junctions is becoming more important as devices are miniaturized to the nanoscale. Herein, we report functional molecular junctions derived from double self-assembled monolayers (SAMs) intercalated between soft graphene electrodes. Newly assembled molecular junctions are fabricated by placing a molecular SAM/(top) electrode on another molecular SAM/(bottom) electrode by using a contact-assembly technique. Double SAMs can provide tunneling conjugation across the van der Waals gap between the terminals of each monolayer and exhibit new electrical functions. Robust contact-assembled molecular junctions can act as platforms for the development of equivalent contact molecular junctions between top and bottom electrodes, which can be applied independently to different kinds of molecules to enhance either the structural complexity or the assembly properties of molecules. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Gap junctions-guards of excitability

    DEFF Research Database (Denmark)

    Stroemlund, Line Waring; Jensen, Christa Funch; Qvortrup, Klaus

    2015-01-01

    Cardiomyocytes are connected by mechanical and electrical junctions located at the intercalated discs (IDs). Although these structures have long been known, it is becoming increasingly clear that their components interact. This review describes the involvement of the ID in electrical disturbances...... of the heart and focuses on the role of the gap junctional protein connexin 43 (Cx43). Current evidence shows that Cx43 plays a crucial role in organizing microtubules at the intercalated disc and thereby regulating the trafficking of the cardiac sodium channel NaV1.5 to the membrane....

  19. Ultra-short laser pulses. Petawatt and femtosecond

    International Nuclear Information System (INIS)

    Lemoine, P.

    1999-01-01

    This book deals with a series of new results obtained thanks to the use of ultra-short laser pulses. This branch of physics has made incredible progresses during the last 25 years. Ultra-short laser pulses offer the opportunity to explore the domain of ultra-high energies and of ultra-short duration events. Applications are various, from controlled nuclear fusion to eye surgery and to more familiar industrial applications such as electronics. (J.S.)

  20. Association of visceral adiposity with oesophageal and junctional adenocarcinomas.

    LENUS (Irish Health Repository)

    Beddy, P

    2012-02-01

    BACKGROUND: Obesity is associated with an increased incidence of oesophageal and oesophagogastric junction adenocarcinoma, in particular Siewert types I and II. This study compared abdominal fat composition in patients with oesophageal\\/junctional adenocarcinoma with that in patients with oesophageal squamous cell carcinoma and gastric adenocarcinoma, and in controls. METHOD: In total, 194 patients (110 with oesophageal\\/junctional adenocarcinoma, 38 with gastric adenocarcinoma and 46 with oesophageal squamous cell carcinoma) and 90 matched control subjects were recruited. The abdominal fat area was assessed using computed tomography (CT), and the total fat area (TFA), visceral fat area (VFA) and subcutaneous fat area (SFA) were calculated. RESULTS: Patients with oesophageal\\/junctional adenocarcinoma had significantly higher TFA and VFA values compared with controls (both P < 0.001), patients with gastric adenocarcinoma (P = 0.013 and P = 0.006 respectively) and patients with oesophageal squamous cell carcinoma (both P < 0.001). For junctional tumours, the highest TFA and VFA values were seen in patients with Siewert type I tumours (respectively P = 0.041 and P = 0.033 versus type III; P = 0.332 and P = 0.152 versus type II). CONCLUSION: Patients with oesophageal\\/junctional adenocarcinoma, in particular oesophageal and Siewert type I junctional tumours, have greater CT-defined visceral adiposity than patients with gastric adenocarcinoma or oesophageal squamous cell carcinoma, or controls.

  1. Magnetic interaction between spatially extended superconducting tunnel junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, Niels; Samuelsen, Mogens Rugholm

    2002-01-01

    A general description of magnetic interactions between superconducting tunnel junctions is given. The description covers a wide range of possible experimental systems, and we explicitly explore two experimentally relevant limits of coupled junctions. One is the limit of junctions with tunneling...... been considered through arrays of superconducting weak links based on semiconductor quantum wells with superconducting electrodes. We use the model to make direct interpretations of the published experiments and thereby propose that long-range magnetic interactions are responsible for the reported...

  2. A memory-based shallow parser for spoken Dutch

    NARCIS (Netherlands)

    Canisius, S.V.M.; van den Bosch, A.; Decadt, B.; Hoste, V.; De Pauw, G.

    2004-01-01

    We describe the development of a Dutch memory-based shallow parser. The availability of large treebanks for Dutch, such as the one provided by the Spoken Dutch Corpus, allows memory-based learners to be trained on examples of shallow parsing taken from the treebank, and act as a shallow parser after

  3. Cavity syncronisation of underdamped Josephson junction arrays

    DEFF Research Database (Denmark)

    Barbara, P.; Filatrella, G.; Lobb, C.

    2003-01-01

    the junctions in the array and an electromagnetic cavity. Here we show that a model of a one-dimensional array of Josephson junctions coupled to a resonator can produce many features of the coherent be havior above threshold, including coherent radiation of power and the shape of the array current...

  4. impairs gap junction function causing congenital cataract

    Indian Academy of Sciences (India)

    Navya

    2017-03-24

    Mar 24, 2017 ... experiment showed a lower dye diffusion distance of Cx46 V44M cells, ... Studies of connexins show that channel gating and permeability .... have found that connexin assembled into gap junction plaques is not soluble in 1% ..... high glucose reduces gap junction activity in microvascular endothelial cells.

  5. Spatially resolved detection of mutually locked Josephson junctions in arrays

    International Nuclear Information System (INIS)

    Keck, M.; Doderer, T.; Huebener, R.P.; Traeuble, T.; Dolata, R.; Weimann, T.; Niemeyer, J.

    1997-01-01

    Mutual locking due to the internal coupling in two-dimensional arrays of Josephson junctions was investigated. The appearance of Shapiro steps in the current versus voltage curve of a coupled on-chip detector junction is used to indicate coherent oscillations in the array. A highly coherent state is observed for some range of the array bias current. By scanning the array with a low-power electron beam, mutually locked junctions remain locked while the unlocked junctions generate a beam-induced additional voltage drop at the array. This imaging technique allows the detection of the nonlocked or weakly locked Josephson junctions in a (partially) locked array state. copyright 1997 American Institute of Physics

  6. Two coupled Josephson junctions: dc voltage controlled by biharmonic current

    International Nuclear Information System (INIS)

    Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

    2012-01-01

    We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

  7. Probing electrical transport in individual carbon nanotubes and junctions

    International Nuclear Information System (INIS)

    Kim, Tae-Hwan; Wendelken, John F; Li Anping; Du Gaohui; Li Wenzhi

    2008-01-01

    The electrical transport properties of individual carbon nanotubes (CNTs) and multi-terminal junctions of CNTs are investigated with a quadraprobe scanning tunneling microscope. The CNTs used in this study are made of stacked herringbone-type conical graphite sheets with a cone angle of ∼20 deg. to the tube axis, and the CNT junctions have no catalytic particles in the junction areas. The CNTs have a significantly higher resistivity than conventional CNTs with concentric walls. The straight CNTs display linear current-voltage (I-V) characteristics, indicating diffusive transport rather than ballistic transport. The structural deformation in CNTs with bends substantially increases the resistivity in comparison with that for the straight segments on the same CNTs, and the I-V curve departs slightly from linearity in curved segments. The junction area of the CNT junctions behaves like an ohmic-type scattering center with linear I-V characteristics. In addition, a gating effect has not been observed, in contrast to the case for conventional multi-walled CNT junctions. These unusual transport properties can be attributed to the enhanced inter-layer interaction in the herringbone-type CNTs.

  8. Justification of Shallow-Water Theory

    Science.gov (United States)

    Ostapenko, V. V.

    2018-01-01

    The basic conservation laws of shallow-water theory are derived from multidimensional mass and momentum integral conservation laws describing the plane-parallel flow of an ideal incompressible fluid above the horizontal bottom. This conclusion is based on the concept of hydrostatic approximation, which generalizes the concept of long-wavelength approximation and is used for justifying the applicability of the shallow-water theory in the simulation of wave flows of fluid with hydraulic bores.

  9. impairs gap junction function causing congenital cataract

    Indian Academy of Sciences (India)

    LIJUAN CHEN

    2017-12-20

    Dec 20, 2017 ... showed a lower dye diffusion distance of Cx46 V44M cells, which indicates that the gap junction intercellular ... permeability could be affected by alterations of charged residues of .... bled into gap junction plaques is not soluble in 1% Triton ..... regulation of connexin 43 expression by high glucose reduces.

  10. Fast temporal fluctuations in single-molecule junctions.

    Science.gov (United States)

    Ochs, Roif; Secker, Daniel; Elbing, Mark; Mayor, Marcel; Weber, Heiko B

    2006-01-01

    The noise within the electrical current through single-molecule junctions is studied cryogenic temperature. The organic sample molecules were contacted with the mechanically controlled break-junction technique. The noise spectra refer to a where only few Lorentzian fluctuators occur in the conductance. The frequency dependence shows qualitative variations from sample to sample.

  11. Axial p-n-junctions in nanowires.

    Science.gov (United States)

    Fernandes, C; Shik, A; Byrne, K; Lynall, D; Blumin, M; Saveliev, I; Ruda, H E

    2015-02-27

    The charge distribution and potential profile of p-n-junctions in thin semiconductor nanowires (NWs) were analyzed. The characteristics of screening in one-dimensional systems result in a specific profile with large electric field at the boundary between the n- and p- regions, and long tails with a logarithmic drop in the potential and charge density. As a result of these tails, the junction properties depend sensitively on the geometry of external contacts and its capacity has an anomalously large value and frequency dispersion. In the presence of an external voltage, electrons and holes in the NWs can not be described by constant quasi-Fermi levels, due to small values of the average electric field, mobility, and lifetime of carriers. Thus, instead of the classical Sah-Noice-Shockley theory, the junction current-voltage characteristic was described by an alternative theory suitable for fast generation-recombination and slow diffusion-drift processes. For the non-uniform electric field in the junction, this theory predicts the forward branch of the characteristic to have a non-ideality factor η several times larger than the values 1 < η < 2 from classical theory. Such values of η have been experimentally observed by a number of researchers, as well as in the present work.

  12. Macroscopic Refrigeration Using Superconducting Tunnel Junctions

    Science.gov (United States)

    Lowell, Peter; O'Neil, Galen; Underwood, Jason; Zhang, Xiaohang; Ullom, Joel

    2014-03-01

    Sub-kelvin temperatures are often a prerequisite for modern scientific experiments, such as quantum information processing, astrophysical missions looking for dark energy signatures and tabletop time resolved x-ray spectroscopy. Existing methods of reaching these temperatures, such as dilution refrigerators, are bulky and costly. In order to increase the accessibility of sub-Kelvin temperatures, we have developed a new method of refrigeration using normal-metal/insulator/superconductor (NIS) tunnel junctions. NIS junctions cool the electrons in the normal metal since the hottest electrons selectively tunnel from the normal metal into the superconductor. By extending the normal metal onto a thermally isolated membrane, the cold electrons can cool the phonons through the electron-phonon coupling. When these junctions are combined with a pumped 3He system, they provide a potentially inexpensive method of reaching these temperatures. Using only three devices, each with a junction area of approximately 3,500 μm2, we have cooled a 2 cm3 Cu plate from 290 mK to 256 mK. We will present these experimental results along with recent modeling predictions that strongly suggest that further refinements will allow cooling from 300 mK to 120 mK. This work is supported by the NASA APRA program.

  13. 2010 Hudson River Shallow Water Sediment Cores

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — The Hudson River Shallow Water Mapping project characterizes the bottom of the Hudson River Estuary in shallow water (<3 m). The characterization includes...

  14. No junctional communication between epithelial cells in hydra

    DEFF Research Database (Denmark)

    de Laat, S W; Tertoolen, L G; Grimmelikhuijzen, C J

    1980-01-01

    junctions between epithelial cells of hydra. However, until now, there has been no report published on whether these junctions enable the epithelial cells to exchange molecules of small molecular weight, as has been described in other organisms. Therefore we decided to investigate the communicative...... properties of the junctional membranes by electrophysiological methods and by intracellular-dye iontophoresis. We report here that no electrotonic coupling is detectable between epithelial cells of Hydra attenuata in: (1) intact animals, (2) head-regenerating animals, (3) cell re-aggregates, and (4) hydra...

  15. Spectrum of resonant plasma oscillations in long Josephson junctions

    International Nuclear Information System (INIS)

    Holst, T.

    1996-01-01

    An analysis is presented for the amplitude of the plasma oscillations in the zero-voltage state of a long and narrow Josephson tunnel junction. The calculation is valid for arbitrary normalized junction length and arbitrary bias current. The spectrum of the plasma resonance is found numerically as solutions to an analytical equation. The low-frequency part of the spectrum contains a single resonance, which is known to exist also in the limit of a short and narrow junction. Above a certain cutoff frequency, a series of high-frequency standing wave plasma resonances is excited, a special feature of long Josephson junctions. copyright 1996 The American Physical Society

  16. Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

    International Nuclear Information System (INIS)

    Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

    1985-01-01

    Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

  17. Squeezed States in Josephson Junctions.

    Science.gov (United States)

    Hu, X.; Nori, F.

    1996-03-01

    We have studied quantum fluctuation properties of Josephson junctions in the limit of large Josephson coupling energy and small charging energy, when the eigenstates of the system can be treated as being nearly localized. We have considered(X. Hu and F. Nori, preprints.) a Josephson junction in a variety of situations, e.g., coupled to one or several of the following elements: a capacitor, an inductor (in a superconducting ring), and an applied current source. By solving an effective Shrödinger equation, we have obtained squeezed vacuum (coherent) states as the ground states of a ``free-oscillating'' (linearly-driven) Josephson junction, and calculated the uncertainties of its canonical momentum, charge, and coordinate, phase. We have also shown that the excited states of the various systems we consider are similar to the number states of a simple harmonic oscillator but with different fluctuation properties. Furthermore, we have obtained the time-evolution operators for these systems. These operators can make it easier to calculate the time-dependence of the expectation values and fluctuations of various quantities starting from an arbitrary initial state.

  18. Molecular anatomy of interendothelial junctions in human blood-brain barrier microvessels.

    Directory of Open Access Journals (Sweden)

    Andrzej W Vorbrodt

    2004-07-01

    Full Text Available Immunogold cytochemical procedure was used to study the localization at the ultrastructural level of interendothelial junction-associated protein molecules in the human brain blood microvessels, representing the anatomic site of the blood-brain barrier (BBB. Ultrathin sections of Lowicryl K4M-embedded biopsy specimens of human cerebral cortex obtained during surgical procedures were exposed to specific antibodies, followed by colloidal gold-labeled secondary antibodies. All tight junction-specific integral membrane (transmembrane proteins--occludin, junctional adhesion molecule (JAM-1, and claudin-5--as well as peripheral zonula occludens protein (ZO-1 were highly expressed. Immunoreactivity of the adherens junction-specific transmembrane protein VE-cadherin was of almost similar intensity. Immunolabeling of the adherens junction-associated peripheral proteins--alpha-catenin, beta-catenin, and p120 catenin--although positive, was evidently less intense. The expression of gamma-catenin (plakoglobin was considered questionable because solitary immunosignals (gold particles appeared in only a few microvascular profiles. Double labeling of some sections made possible to observe strict colocalization of the junctional molecules, such as occludin and ZO-1 or JAM-1 and VE-cadherin, in the interendothelial junctions. We found that in human brain microvessels, the interendothelial junctional complexes contain molecular components specific for both tight and adherens junctions. It is assumed that the data obtained can help us find the immunodetectable junctional molecules that can serve as sensitive markers of normal or abnormal function of the BBB.

  19. Phase-dependent noise in Josephson junctions

    Science.gov (United States)

    Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

    2018-03-01

    In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

  20. Electrical analog of a Josephson junction

    International Nuclear Information System (INIS)

    Goldman, A.M.

    1979-01-01

    It is noted that a mathematical description of the phase-coupling of two oscillators synchronized by a phase-lock-loop under the influence of thermal white noise is analogous to that of the phase coupling of two superconductors in a Josephson junction also under the influence of noise. This analogy may be useful in studying threshold instabilities of the Josephson junction in regimes not restricted to the case of large damping. This is of interest because the behavior of the mean voltage near the threshold current can be characterized by critical exponents which resemble those exhibited by an order parameter of a continuous phase transition. As it is possible to couple a collection of oscillators together in a chain, the oscillator analogy may also be useful in exploring the dynamics and statistical mechanics of coupled junctions

  1. Several alternative approaches to the manufacturing of HTS Josephson junctions

    OpenAIRE

    Villegier , J.; Boucher , H.; Ghis , A.; Levis , M.; Méchin , Laurence; Moriceau , H.; Pourtier , F.; Vabre , M.; Nicoletti , S.; Correra , L.

    1994-01-01

    In this work we describe comparatively the fabrication and the characterization of various types of HTS Josephson junctions manufactured using different processes : grain boundary junctions have been studied both by the way of junctions on bicrystal substrates and of bi-epitaxial junctions. Ramp-edge types have been elaborated and characterized using mainly N-YBaCuO thin film as a barrier while the trilayer approach has been investigated through a-axis structures. YBaCuO or GdBaCuO supercondu...

  2. Key technologies for well drilling and completion in ultra-deep sour gas reservoirs, Yuanba Gasfield, Sichuan Basin

    Directory of Open Access Journals (Sweden)

    Jiaxiang Xia

    2016-12-01

    Full Text Available The Yuanba Gasfield is a large gas field discovered by Sinopec in the Sichuan Basin in recent years, and another main exploration area for natural gas reserves and production increase after the Puguang Gasfield. The ultra-deep sour gas reservoir in the Yuanba Gasfield is characterized by complicated geologic structure, deep reservoirs and complex drilled formation, especially in the continental deep strata which are highly abrasive with low ROP (rate of penetration and long drilling period. After many years of drilling practice and technical research, the following six key drilling and completion technologies for this type reservoir are established by introducing new tools and technologies, developing specialized drill bits and optimizing drilling design. They are: casing program optimization technology for ROP increasing and safe well completion; gas drilling technology for shallow continental strata and high-efficiency drilling technology for deep high-abrasion continental strata; drilling fluid support technologies of gas–liquid conversion, ultra-deep highly-deviated wells and horizontal-well lubrication and drag reduction, hole stability control and sour gas contamination prevention; well cementing technologies for gas medium, deep-well long cementing intervals and ultra-high pressure small space; horizontal-well trajectory control technologies for measuring instrument, downhole motor optimization and bottom hole assembly design; and liner completion modes and completion string optimization technologies suitable for this gas reservoir. Field application shows that these key technologies are contributive to ROP increase and efficiency improvement of 7000 m deep horizontal wells and to significant operational cycle shortening.

  3. The role of Rap1 in cell-cell junction formation

    NARCIS (Netherlands)

    Kooistra, M.R.H.

    2008-01-01

    Both epithelial and endothelial cells form cell-cell junctions at the cell-cell contacts to maintain tissue integrity. Proper regulation of cell-cell junctions is required for the organisation of the tissue and to prevent leakage of blood vessels. In endothelial cells, the cell-cell junctions are

  4. What happens in Josephson junctions at high critical current densities

    Science.gov (United States)

    Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

    2017-07-01

    The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

  5. An ion-beam-assisted process for high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

    1997-01-01

    We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

  6. Au nanowire junction breakup through surface atom diffusion

    Science.gov (United States)

    Vigonski, Simon; Jansson, Ville; Vlassov, Sergei; Polyakov, Boris; Baibuz, Ekaterina; Oras, Sven; Aabloo, Alvo; Djurabekova, Flyura; Zadin, Vahur

    2018-01-01

    Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

  7. Flicker (1/f) noise in tunnel junction DC SQUIDS

    International Nuclear Information System (INIS)

    Koch, R.H.; Clarke, J.; Goubau, W.M.; Martinis, J.M.; Pegrum, C.M.; Van Harlingen, D.J.

    1983-01-01

    We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 10 4 μm 2 , but significantly overestimates the noise for junctions with areas of about 6 μm 2 . DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10 -10 /f)phi 2 0 Hz -1 . It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies

  8. Many-junction photovoltaic device performance under non-uniform high-concentration illumination

    Science.gov (United States)

    Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

    2017-09-01

    A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

  9. Josephson junctions array resonators

    Energy Technology Data Exchange (ETDEWEB)

    Gargiulo, Oscar; Muppalla, Phani; Mirzaei, Iman; Kirchmair, Gerhard [Institute for Quantum Optics and Quantum Information, Innsbruck (Austria)

    2016-07-01

    We present an experimental analysis of the self- and cross-Kerr effect of extended plasma resonances in Josephson junction chains. The chain consists of 1600 individual junctions and we can measure quality factors in excess of 10000. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. By changing the input power we are able to measure this frequency shift on a single mode (self-kerr). By changing the input power on another mode while measuring the same one, we are able to evaluate the cross-kerr effect. We can measure the cross-Kerr effect by probing the resonance frequency of one mode while exciting another mode of the array with a microwave drive.

  10. Is evaporative colling important for shallow clouds?

    Science.gov (United States)

    Gentine, P.; Park, S. B.; Davini, P.; D'Andrea, F.

    2017-12-01

    We here investigate and test using large-eddy simulations the hypothesis that evaporative cooling might not be crucial for shallow clouds. Results from various Shallow convection and stratocumulus LES experiments show that the influence of evaporative cooling is secondary compared to turbulent mixing, which dominates the buoyancy reversal. In shallow cumulus subising shells are not due to evaporative cooling but rather reflect a vortical structure, with a postive buoyancy anomaly in the core due to condensation. Disabling evaporative cooling has negligible impact on this vortical structure and on buoyancy reversal. Similarly in non-precipitating stratocumuli evaporative cooling is negeligible copmared to other factors, especially turbulent mixing and pressure effects. These results emphasize that it may not be critical to icnlude evaporative cooling in parameterizations of shallow clouds and that it does not alter entrainment.

  11. Doping enhanced barrier lowering in graphene-silicon junctions

    Science.gov (United States)

    Zhang, Xintong; Zhang, Lining; Chan, Mansun

    2016-06-01

    Rectifying properties of graphene-semiconductor junctions depend on the Schottky barrier height. We report an enhanced barrier lowering in graphene-Si junction and its essential doping dependence in this paper. The electric field due to ionized charge in n-type Si induces the same type doping in graphene and contributes another Schottky barrier lowering factor on top of the image-force-induced lowering (IFIL). We confirm this graphene-doping-induced lowering (GDIL) based on well reproductions of the measured reverse current of our fabricated graphene-Si junctions by the thermionic emission theory. Excellent matching between the theoretical predictions and the junction data of the doping-concentration dependent barrier lowering serves as another evidence of the GDIL. While both GDIL and IFIL are enhanced with the Si doping, GDIL exceeds IFIL with a threshold doping depending on the as-prepared graphene itself.

  12. Magnetic properties of slablike Josephson-junction arrays

    International Nuclear Information System (INIS)

    Chen, D.; Sanchez, A.; Hernando, A.

    1994-01-01

    Magnetic properties of infinitely long and wide slablike Josephson-junction arrays (JJA's) consisting of 2N+1 rows of grains are calculated for the dc Josephson effect with gauge-invariant phase differences. When N is large, the intergranular magnetization curve, M J (H), of the JJA's in low fields approaches that of uniform Josephson junctions with lengths equal to the thicknesses of the JJA's, but in a larger field interval, its amplitude is dually modulated with periods determined by the junction and void areas. M J (H) curves for small N are more complicated. The concept of Josephson vortices and the application of the results to high-T c superconductors are discussed

  13. Internal resonances in periodically modulated long Josephson junctions

    DEFF Research Database (Denmark)

    Larsen, Britt Hvolbæk; Mygind, Jesper; Ustinov, Alexey V.

    1995-01-01

    Current-voltage (I-V) characteristics of long Josephson junctions with a periodic lattice of localized inhomogeneities are studied. The interaction between the moving fluxons and the inhomogeneities causes resonant steps in the IV-curve. Some of these steps are due to a synchronization to resonant...... Fiske modes in the sub-junctions formed between the inhomogeneities. The voltage positions of the resonant steps oscillate as function of the applied magnetic field with a period corresponding to the inclusion of one magnetic flux quantum, Φ0=h/2e, per sub-junction. A qualitative explanation that takes...

  14. Capacitance measurement of Josephson tunnel junctions with microwave-induced dc quasiparticle tunneling currents

    International Nuclear Information System (INIS)

    Hamasaki, K.; Yoshida, K.; Irie, F.; Enpuku, K.

    1982-01-01

    The microwave response of the dc quasiparticle tunneling current in Josephson tunnel junctions, where the Josephson current is suppressed by an external magnetic field, has been studied quantitatively in order to clarify its characteristics as a probe for the measurement of the junction capacitance. Extensive experiments for both small and long junctions are carried out for distinguishing between microwave behaviors of lumped and distributed constant junctions. It is shown that the observed voltage dependence of the dc quasiparticle tunneling current modified by an applied rf field is in good agreement with a theoretical result which takes into account the influence of the microwave circuit connected to the junction. The comparison between theory and experiment gives the magnitude of the internal rf field in the junction. Together with the applied rf field, this internal rf field leads to the junction rf impedance which is dominated by the junction capacitance in our experimental condition. In the case of lumped junctions, this experimental rf impedance is in reasonable agreement with the theoretical one with the junction capacitance estimated from the Fiske step of the distributed junction fabricated on the same substrate; the obtained ratio of the experimental impedance to the theoretical one is approximately 0.6--1.7. In the case of distributed junctions, however, experimental values of their characteristic impedances are approximately 0.2--0.3 of theoretical values calculated by assuming the one-dimensional junction model and taking account of the standing-wave effect in the junction

  15. Manufacturing P-N junctions in germanium bodies

    International Nuclear Information System (INIS)

    Hall, R.N.

    1980-01-01

    A method of producing p-n junctions in Ge so as to facilitate their use as radiation detectors involves forming a body of high purity p-type germanium, diffusing lithium deep into the body, in the absence of electrolytic processes, to form a junction between n-type and p-type germanium greater than 1 mm depth. (UK)

  16. Self-positioned thin Pb-alloy base electrode Josephson junction

    International Nuclear Information System (INIS)

    Kuroda, K.; Sato, K.

    1986-01-01

    A self-positioned thin (SPOT) Pb-alloy base electrode Josephson junction is developed. In this junction, a 50-nm thick Pb-alloy base electrode is restricted within the junction region on an Nb underlayer using a self-alignment technique. The grain size reduction and the base electrode area restriction greatly improve thermal cycling stability, where the thermal cycling tests of 4000 proposed junctions (5 x 5 μm 2 ) showed no failures after 4000 cycles. In addition, the elimination of insulator layer stress on the Pb-alloy base electrode rectifies the problem of size effect on current density. The Nb underlayers also serve to isolate the Pb-alloy base electrodes from the resistors

  17. High-efficiency thermal switch based on topological Josephson junctions

    Science.gov (United States)

    Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

    2017-02-01

    We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

  18. Phonon spectroscopy with superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Grimshaw, J.M.

    1984-02-01

    Superconducting tunnel junctions can be used as generators and detectors of monochromatic phonons of frequency larger than 80 GHz, as was first devised by Eisenmenger and Dayem (1967) and Kinder (1972a, 1973). In this report, we intend to give a general outline of this type of spectroscopy and to present the results obtained so far. The basic physics underlying phonon generation and detection are described in chapter I, a wider approach being given in the references therein. In chapter II, the different types of junctions are considered with respect to their use. Chapter III deals with the evaporation technique for the superconducting junctions. The last part of this report is devoted to the results that we have obtained on γ-irradiated LiF, pure Si and Phosphorous implanted Si. In these chapters, the limitations of the spectrometer are brought out and suggestions for further work are given [fr

  19. Breaking into the epithelial apical-junctional complex--news from pathogen hackers.

    Science.gov (United States)

    Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

    2004-02-01

    The epithelial apical-junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical-junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical-junctional complex of the Ig superfamily--junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor--are important regulators of junction structure and function and represent critical targets of microbial virulence gene products.

  20. Dilute Nitrides For 4-And 6- Junction Space Solar Cells

    Science.gov (United States)

    Essig, S.; Stammler, E.; Ronsch, S.; Oliva, E.; Schachtner, M.; Siefer, G.; Bett, A. W.; Dimroth, F.

    2011-10-01

    According to simulations the efficiency of conventional, lattice-matched GaInP/GaInAs/Ge triple-junction space solar cells can be strongly increased by the incorporation of additional junctions. In this way the existing excess current of the Germanium bottom cell can be reduced and the voltage of the stack can be increased. In particular, the use of 1.0 eV materials like GaInNAs opens the door for solar cells with significantly improved conversion efficiency. We have investigated the material properties of GaInNAs grown by metal organic vapour phase epitaxy (MOVPE) and its impact on the quantum efficiency of solar cells. Furthermore we have developed a GaInNAs subcell with a bandgap energy of 1.0 eV and integrated it into a GaInP/GaInAs/GaInNAs/Ge 4-junction and a AlGaInP/GaInP/AlGaInAs/GaInAs/GaInNAs/Ge 6- junction space solar cell. The material quality of the dilute nitride junction limits the current density of these devices to 9.3 mA/cm2 (AM0). This is not sufficient for a 4-junction cell but may lead to current matched 6- junction devices in the future.

  1. Josephson junctions in high-T/sub c/ superconductors

    Science.gov (United States)

    Falco, C.M.; Lee, T.W.

    1981-01-14

    The invention includes a high T/sub c/ Josephson sperconducting junction as well as the method and apparatus which provides the junction by application of a closely controlled and monitored electrical discharge to a microbridge region connecting two portions of a superconducting film.

  2. Majorana splitting from critical currents in Josephson junctions

    Science.gov (United States)

    Cayao, Jorge; San-Jose, Pablo; Black-Schaffer, Annica M.; Aguado, Ramón; Prada, Elsa

    2017-11-01

    A semiconducting nanowire with strong Rashba spin-orbit coupling and coupled to a superconductor can be tuned by an external Zeeman field into a topological phase with Majorana zero modes. Here we theoretically investigate how this exotic topological superconductor phase manifests in Josephson junctions based on such proximitized nanowires. In particular, we focus on critical currents in the short junction limit (LN≪ξ , where LN is the junction length and ξ is the superconducting coherence length) and show that they contain important information about nontrivial topology and Majoranas. This includes signatures of the gap inversion at the topological transition and a unique oscillatory pattern that originates from Majorana interference. Interestingly, this pattern can be modified by tuning the transmission across the junction, thus providing complementary evidence of Majoranas and their energy splittings beyond standard tunnel spectroscopy experiments, while offering further tunability by virtue of the Josephson effect.

  3. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  4. Critical current fluctuation in a microwave-driven Josephson junction

    International Nuclear Information System (INIS)

    Dong Ning; Sun Guozhu; Wang Yiwen; Cao Junyu; Yu Yang; Chen Jian; Kang Lin; Xu Weiwei; Han Siyuan; Wu Peiheng

    2007-01-01

    Josephson junction devices are good candidates for quantum computation. A large energy splitting was observed in the spectroscopy of a superconducting Josephson junction. The presence of the critical current fluctuation near the energy splitting indicated coupling between the junction and a two-level system. Furthermore, we find that this fluctuation is microwave dependent. It only appears at certain microwave frequency. This relation suggested that the decoherence of qubits is influenced by the necessary computing operations

  5. Junction Propagation in Organometal Halide Perovskite-Polymer Composite Thin Films.

    Science.gov (United States)

    Shan, Xin; Li, Junqiang; Chen, Mingming; Geske, Thomas; Bade, Sri Ganesh R; Yu, Zhibin

    2017-06-01

    With the emergence of organometal halide perovskite semiconductors, it has been discovered that a p-i-n junction can be formed in situ due to the migration of ionic species in the perovskite when a bias is applied. In this work, we investigated the junction formation dynamics in methylammonium lead tribromide (MAPbBr 3 )/polymer composite thin films. It was concluded that the p- and n- doped regions propagated into the intrinsic region with an increasing bias, leading to a reduced intrinsic perovskite layer thickness and the formation of an effective light-emitting junction regardless of perovskite layer thicknesses (300 nm to 30 μm). The junction propagation also played a major role in deteriorating the LED operation lifetime. Stable perovskite LEDs can be achieved by restricting the junction propagation after its formation.

  6. Magnetic field behavior of current steps in long Josephson junctions

    International Nuclear Information System (INIS)

    Costabile, G.; Cucolo, A.M.; Pace, S.; Parmentier, R.D.; Savo, B.; Vaglio, R.

    1980-01-01

    The zero-field steps, or dc current singularities, in the current-voltage characteristics of long Josephson tunnel junctions, first reported by Chen et al., continue to attract research interest both because their study can provide fundamental information on the dynamics of fluxons in such junctions and because they are accompanied by the emission of microwave radiation from the junction, which may be exploitable in practical oscillator applications. The purpose of this paper is to report some experimental observations of the magnetic field behavior of the steps in junctions fabricated in our Laboratory and to offer a qualitative explanation for this behavior. Measurements have been made both for very long (L >> lambdasub(J)) and for slightly long (L approx. >= lambdasub(J)) junctions with a view toward comparing our results with those of other workers. (orig./WRI)

  7. Controlling low-rate signal path microdischarge for an ultra-low-background proportional counter

    International Nuclear Information System (INIS)

    Mace, E.K.; Aalseth, C.E.; Bonicalzi, R.M.; Day, A.R.; Hoppe, E.W.; Keillor, M.E.; Myers, A.W.; Overman, C.T.; Seifert, A.

    2013-01-01

    Pacific Northwest National Laboratory (PNNL) has developed an ultra-low-background proportional counter (ULBPC) made of high purity copper. These detectors are part of an ultra-low-background counting system (ULBCS) in the newly constructed shallow underground laboratory at PNNL (at a depth of ∼30 m water-equivalent). To control backgrounds, the current preamplifier electronics are located outside the ULBCS shielding. Thus the signal from the detector travels through ∼1 m of cable and is potentially susceptible to high voltage microdischarge and other sources of electronic noise. Based on initial successful tests, commercial cables and connectors were used for this critical signal path. Subsequent testing across different batches of commercial cables and connectors, however, showed unwanted (but still low) rates of microdischarge noise. To control this noise source, two approaches were pursued: first, to carefully validate cables, connectors, and other commercial components in this critical signal path, making modifications where necessary; second, to develop a custom low-noise, low-background preamplifier that can be integrated with the ULBPC and thus remove most commercial components from the critical signal path. This integrated preamplifier approach is based on the Amptek A250 low-noise charge-integrating preamplifier module. The initial microdischarge signals observed are presented and characterized according to the suspected source. Each of the approaches for mitigation is described, and the results from both are compared with each other and with the original performance seen with commercial cables and connectors. (author)

  8. Environmental Audit of the Grand Junction Projects Office

    Energy Technology Data Exchange (ETDEWEB)

    1991-08-01

    The Grand Junction Projects Office (GJPO) is located in Mesa County, Colorado, immediately south and west of the Grand Junction city limits. The US Atomic Energy Commission (AEC) established the Colorado Raw Materials Office at the present-day Grand Junction Projects Office in 1947, to aid in the development of a viable domestic uranium industry. Activities at the site included sampling uranium concentrate; pilot-plant milling research, including testing and processing of uranium ores; and operation of a uranium mill pilot plant from 1954 to 1958. The last shipment of uranium concentrate was sent from GJPO in January, 1975. Since that time the site has been utilized to support various DOE programs, such as the former National Uranium Resource Evaluation (NURE) Program, the Uranium Mill Tailings Remedial Action Project (UMTRAP), the Surplus Facilities Management Program (SFMP), and the Technical Measurements Center (TMC). All known contamination at GJPO is believed to be the result of the past uranium milling, analyses, and storage activities. Hazards associated with the wastes impounded at GJPO include surface and ground-water contamination and potential radon and gamma-radiation exposure. This report documents the results of the Baseline Environmental Audit conducted at Grand Junction Projects Office (GJPO) located in Grand Junction, Colorado. The Grand Junction Baseline Environmental Audit was conducted from May 28 to June 12, 1991, by the Office of Environmental Audit (EH-24). This Audit evaluated environmental programs and activities at GJPO, as well as GJPO activities at the State-Owned Temporary Repository. 4 figs., 12 tabs.

  9. Environmental Audit of the Grand Junction Projects Office

    International Nuclear Information System (INIS)

    1991-08-01

    The Grand Junction Projects Office (GJPO) is located in Mesa County, Colorado, immediately south and west of the Grand Junction city limits. The US Atomic Energy Commission (AEC) established the Colorado Raw Materials Office at the present-day Grand Junction Projects Office in 1947, to aid in the development of a viable domestic uranium industry. Activities at the site included sampling uranium concentrate; pilot-plant milling research, including testing and processing of uranium ores; and operation of a uranium mill pilot plant from 1954 to 1958. The last shipment of uranium concentrate was sent from GJPO in January, 1975. Since that time the site has been utilized to support various DOE programs, such as the former National Uranium Resource Evaluation (NURE) Program, the Uranium Mill Tailings Remedial Action Project (UMTRAP), the Surplus Facilities Management Program (SFMP), and the Technical Measurements Center (TMC). All known contamination at GJPO is believed to be the result of the past uranium milling, analyses, and storage activities. Hazards associated with the wastes impounded at GJPO include surface and ground-water contamination and potential radon and gamma-radiation exposure. This report documents the results of the Baseline Environmental Audit conducted at Grand Junction Projects Office (GJPO) located in Grand Junction, Colorado. The Grand Junction Baseline Environmental Audit was conducted from May 28 to June 12, 1991, by the Office of Environmental Audit (EH-24). This Audit evaluated environmental programs and activities at GJPO, as well as GJPO activities at the State-Owned Temporary Repository. 4 figs., 12 tabs

  10. Absolute migration and the evolution of the Rodriguez triple junction ...

    African Journals Online (AJOL)

    The Rodriguez Triple Junction (RTJ) is a junction connecting three mid-ocean ridges in the Indian Ocean: the Southwest Indian Ridge (SWIR), the Central Indian Ridge (CIR) and the Southeast Indian Ridge (SEIR). The evolution of the RTJ has been studied extensively for the past 10 Ma and the triple junction is believed to ...

  11. Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions.

    Science.gov (United States)

    Zhu, Mengjian; Ben Shalom, Moshe; Mishchsenko, Artem; Fal'ko, Vladimir; Novoselov, Kostya; Geim, Andre

    2018-02-08

    Ballistic Josephson junctions are predicted to support a number of exotic physics processess, providing an ideal system to inject the supercurrent in the quantum Hall regime. Herein, we demonstrate electrical transport measurements on ballistic superconductor-graphene-superconductor junctions by contacting graphene to niobium with a junction length up to 1.5 μm. Hexagonal boron nitride encapsulation and one-dimensional edge contacts guarantee high-quality graphene Josephson junctions with a mean free path of several micrometers and record-low contact resistance. Transports in normal states including the observation of Fabry-Pérot oscillations and Sharvin resistance conclusively witness the ballistic propagation in the junctions. The critical current density J C is over one order of magnitude larger than that of the previously reported junctions. Away from the charge neutrality point, the I C R N product (I C is the critical current and R N the normal state resistance of junction) is nearly a constant, independent of carrier density n, which agrees well with the theory for ballistic Josephson junctions. Multiple Andreev reflections up to the third order are observed for the first time by measuring the differential resistance in the micrometer-long ballistic graphene Josephson junctions.

  12. The UltraLightweight Technology for Research in Astronomy (ULTRA) Project

    Science.gov (United States)

    Twarog, B. A.; Anthony-Twarog, B. J.; Shawl, S. J.; Hale, R.; Taghavi, R.; Fesen, R.; Etzel, P. B.; Martin, R.; Romeo, R.

    2004-12-01

    The collaborative focus of four academic departments (Univ. of Kansas Aerospace Engineering, Univ. of Kansas Physics & Astronomy, San Diego State University Astronomy and Dartmouth College Astronomy) and a private industry partner (Composite Mirror Applications, Inc.-CMA, Inc.) is a three-year plan to develop and test UltraLightweight Technology for Research in Astronomy (ULTRA). The ULTRA technology, using graphite fiber composites to fabricate mirrors and telescope structures, offers a versatile and cost-effective tool for optical astronomy, including the economical fabrication and operation of telescopes ranging from small (1m or smaller) aperture for education and research to extremely large (30m+) segmented telescopes (ELTs). The specific goal of this NSF-funded three-year Major Research Instrumentation project is to design, build, and test a 1m-class optical tube assembly (OTA) and mirrors constructed entirely from composites. In the first year of the project, the team has built and is field-testing two 0.4m prototypes to validate the optical surfaces and figures of the mirrors and to test and refine the structural dynamics of the OTA. Preparation for design and construction of the 1m telescope is underway. When completed in late 2005, the ULTRA telescope will be operated remotely from Mt. Laguna Observatory east of San Diego, where it will undergo a period of intensive optical and imaging tests. A 0.4m prototype OTA with mirrors (12 kg total weight) will be on display at the meeting. Support of this work by NSF through grants AST-0320784 and AST-0321247, NASA grant NCC5-600, the University of Kansas, and San Diego State University is gratefully acknowledged.

  13. 21 CFR 177.2910 - Ultra-filtration membranes.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 3 2010-04-01 2009-04-01 true Ultra-filtration membranes. 177.2910 Section 177... Components of Articles Intended for Repeated Use § 177.2910 Ultra-filtration membranes. Ultra-filtration membranes identified in paragraphs (a)(1), (a)(2), (a)(3), and (a)(4) of this section may be safely used in...

  14. Shapiro and parametric resonances in coupled Josephson junctions

    International Nuclear Information System (INIS)

    Gaafar, Ma A; Shukrinov, Yu M; Foda, A

    2012-01-01

    The effect of microwave irradiation on the phase dynamics of intrinsic Josephson junctions in high temperature superconductors is investigated. We compare the current-voltage characteristics for a stack of coupled Josephson junctions under external irradiation calculated in the framework of CCJJ and CCJJ+DC models.

  15. Towards molecular electronics with large-area molecular junctions

    NARCIS (Netherlands)

    Akkerman, HB; Blom, PWM; de Leeuw, DM; de Boer, B

    2006-01-01

    Electronic transport through single molecules has been studied extensively by academic(1-8) and industrial(9,10) research groups. Discrete tunnel junctions, or molecular diodes, have been reported using scanning probes(11,12), break junctions(13,14), metallic crossbars(6) and nanopores(8,15). For

  16. Boron Profile Sharpening in Ultra-Shallow p+-n Junction Produced by Plasma Immersion Ion Implantation from BF3 Plasma

    International Nuclear Information System (INIS)

    Lukichev, V.; Rudenko, K.; Orlikovsky, A.; Pustovit, A.; Vyatkin, A.

    2008-01-01

    We have investigated plasma immersion ion implantation (PI 3 ) of boron with energies of 500 eV (doses up to 2x10 15 cm -2 ) from BF 3 plasma with He pre-amorphizing implantation (PAI)(energy 3 keV, dose 5x10 16 cm -2 ). Implanted samples were subjected to RTA (T = 900 to 1050 deg. C, t = 2 to 24 sec and spike anneal). SIMS analysis of boron profiles revealed its anomalous behavior. For short RTA times the profile tail (below 5x10 19 cm -3 ) moves toward the surface and then, as in the usual diffusion, toward the bulk at longer annealing times.

  17. Chlorpromazine reduces the intercellular communication via gap junctions in mammalian cells

    International Nuclear Information System (INIS)

    Orellana, Juan A.; Palacios-Prado, Nicolas; Saez, Juan C.

    2006-01-01

    In the work presented herein, we evaluated the effect of chlorpromazine (CPZ) on gap junctions expressed by two mammalian cell types; Gn-11 cells (cell line derived from mouse LHRH neurons) and rat cortical astrocytes maintained in culture. We also attempted to elucidate possible mechanisms of action of CPZ effects on gap junctions. CPZ, in concentrations comparable with doses used to treat human diseases, was found to reduce the intercellular communication via gap junctions as evaluated with measurements of dye coupling (Lucifer yellow). In both cell types, maximal inhibition of functional gap junctions was reached within about 1 h of treatment with CPZ, an recovery was almost complete at about 5 h after CPZ wash out. In both cell types, CPZ treatment increased the phosphorylation state of connexin43 (Cx43), a gap junction protein subunit. Moreover, CPZ reduced the reactivity of Cx43 (immunofluorescence) at cell interfaces and concomitantly increased its reactivity in intracellular vesicles, suggesting an increased retrieval from and/or reduced insertion into the plasma membrane. CPZ also caused cellular retraction reducing cell-cell contacts in a reversible manner. The reduction in contact area might destabilize existing gap junctions and abrogate formation of new ones. Moreover, the CPZ-induced reduction in gap junctional communication may depend on the connexins (Cxs) forming the junctions. If Cx43 were the only connexin expressed, MAPK-dependent phosphorylation of this connexin would induce closure of gap junction channels

  18. Exotic hadron and string junction model

    International Nuclear Information System (INIS)

    Imachi, Masahiro

    1978-01-01

    Hadron structure is investigated adopting string junction model as a realization of confinement. Besides exotic hadrons (M 4 , B 5 etc.), unconventional hadrons appear. A mass formula for these hadrons is proposed. New selection rule is introduced which requires the covalence of constituent line at hadron vertex. New duality appears due to the freedom of junction, especially in anti BB→anti BB reaction. A possible assignment of exotic and unconventional hadrons to recently observed narrow meson states is presented. (auth.)

  19. Shape Memory Alloy connectors for Ultra High Vacuum applications: a breakthrough for accelerator technologies

    CERN Document Server

    AUTHOR|(CDS)2091326; Garion, Cedric

    Beam-pipe coupling in particle accelerators is nowadays provided by metallic flanges that are tightly connected by several screws or heavy collars. Their installation and dismounting in radioactive areas contribute to the radiation doses received by the technical personnel. Owing to the increased proton-beam intensity and luminosity of the future High-Luminosity LHC (HL-LHC), radioactivity in some specific zones will be significantly higher than in the present LHC; the presence of the technical staff in these areas will be strictly controlled and minimized. Remote interventions are being considered, too. Shape Memory Alloys (SMAs) offer a unique possibility to generate tight connections and fast clamping/unclamping by remotely changing the temperature of the junction unit. In fact, SMAs exhibit unique strain and stress recovery capabilities which are related to reversible phase transition mechanisms, induced thermally or mechanically. In this PhD work, a novel Ultra-High Vacuum (UHV) coupling system based on ...

  20. ACCIDENT PREDICTION MODELS FOR UNSIGNALISED URBAN JUNCTIONS IN GHANA

    OpenAIRE

    Mohammed SALIFU, MSc., PhD, MIHT, MGhIE

    2004-01-01

    The main objective of this study was to provide an improved method for safety appraisal in Ghana through the development and application of suitable accident prediction models for unsignalised urban junctions. A case study was designed comprising 91 junctions selected from the two most cosmopolitan cities in Ghana. A wide range of traffic and road data together with the corresponding accident data for each junction for the three-year period 1996-1998 was utilized in the model development p...

  1. An interim report on shallow-flaw fracture technology development

    International Nuclear Information System (INIS)

    Pennell, W.E.; Bass, B.R.; Bryson, J.W.; McAfee, W.J.

    1995-01-01

    Shallow-flaw fracture technology is being developed for application to the safety assessment of radiation-embrittled nuclear reactor pressure vessels (RPVS) containing flaws. Fracture mechanics tests on RPV steel, coupled with detailed elastic-plastic finite-element analyses of the crack-tip stress fields, have shown that (1) constraint relaxation at the crack tip of shallow surface flaws results in increased data scatter but no increase in the lower-bound fracture toughness, (2) the nil ductility temperature (NDT) performs better than the reference temperature for nil ductility transition (RT NDT ) as a normalizing parameter for shallow-flaw fracture toughness data, (3) biaxial loading can reduce the shallow-flaw fracture toughness, (4) stress-based dual-parameter fracture toughness correlations cannot predict the effect of biaxial loading on shallow-flaw fracture toughness because in-plane stresses at the crack tip are not influenced by biaxial loading, and (5) a strain-based dual-parameter fracture toughness correlation can predict the effect of biaxial loading on shallow-flaw fracture toughness

  2. Droplet Traffic Control at a simple T junction

    Science.gov (United States)

    Panizza, Pascal; Engl, Wilfried; Colin, Annie; Ajdari, Armand

    2006-03-01

    A basic yet essential element of every traffic flow control is the effect of a junction where the flow is separated into several streams. How do pedestrians, vehicles or blood cells divide when they reach a junction? How does the outcome depend on their density? Similar fundamental questions hold for much simpler systems: in this paper, we have studied the behaviour of periodic trains of water droplets flowing in oil through a channel as they reach a simple, locally symmetric, T junction. Depending on their dilution, we observe that the droplets are either alternately partitioned between both outlets or sorted exclusively into the shortest one. We show that this surprising behaviour results from the hydrodynamic feed-back of drops in the two outlets on the selection process occurring at the junction. Our results offer a first guide for the design and modelling of droplet traffic in complex branched networks, a necessary step towards parallelized droplet-based ``lab-on-chip'' devices.

  3. Closure of shallow underground injection wells

    International Nuclear Information System (INIS)

    Veil, J.A.; Grunewald, B.

    1993-01-01

    Shallow injection wells have long been used for disposing liquid wastes. Some of these wells have received hazardous or radioactive wastes. According to US Environmental Protection Agency (EPA) regulations, Class IV wells are those injection wells through which hazardous or radioactive wastes are injected into or above an underground source of drinking water (USDW). These wells must be closed. Generally Class V wells are injection wells through which fluids that do not contain hazardous or radioactive wastes are injected into or above a USDW. Class V wells that are responsible for violations of drinking water regulations or that pose a threat to human health must also be closed. Although EPA regulations require closure of certain types of shallow injection wells, they do not provide specific details on the closure process. This paper describes the regulatory background, DOE requirements, and the steps in a shallow injection well closure process: Identification of wells needing closure; monitoring and disposal of accumulated substances; filling and sealing of wells; and remediation. In addition, the paper describes a major national EPA shallow injection well enforcement initiative, including closure plan guidance for wells used to dispose of wastes from service station operations

  4. The string-junction picture of multiquark states: an update

    Energy Technology Data Exchange (ETDEWEB)

    Rossi, G.C. [Dipartimento di Fisica, Università di Roma Tor Vergata, INFN, Sezione di Roma 2, Via della Ricerca Scientifica, 00133 Roma (Italy); Centro Fermi, Museo Storico della Fisica,Piazza del Viminale 1, 00184 Roma (Italy); Veneziano, G. [Collège de France,11 place M. Berthelot, 75005 Paris (France); Theory Division, CERN,CH-1211 Geneva 23 (Switzerland); Dipartimento di Fisica, Università di Roma La Sapienza,Piazzale A. Moro 5, 00185 Roma (Italy)

    2016-06-07

    We recall and update, both theoretically and phenomenologically, our (nearly) forty-years-old proposal of a string-junction as a necessary complement to the conventional classification of hadrons based just on their quark-antiquark constituents. In that proposal single (though in general metastable) hadronic states are associated with “irreducible' gauge-invariant operators consisting of Wilson lines (visualized as strings of color flux tubes) that may either end on a quark or an antiquark, or annihilate in triplets at a junction J or an anti-junction J̄. For the junction-free sector (ordinary q q̄ mesons and glueballs) the picture is supported by large-N (number of colors) considerations as well as by a lattice strong-coupling expansion. Both imply the famous OZI rule suppressing quark-antiquark annihilation diagrams. For hadrons with J and/or J̄ constituents the same expansions support our proposal, including its generalization of the OZI rule to the suppression of J−J̄ annihilation diagrams. Such a rule implies that hadrons with junctions are “mesophobic' and thus unusually narrow if they are below threshold for decaying into as many baryons as their total number of junctions (two for a tetraquark, three for a pentaquark). Experimental support for our claim, based on the observation that narrow multiquark states typically lie below (well above) the relevant baryonic (mesonic) thresholds, will be presented.

  5. Mixing Hot and Cold Water Streams at a T-Junction

    Science.gov (United States)

    Sharp, David; Zhang, Mingqian; Xu, Zhenghe; Ryan, Jim; Wanke, Sieghard; Afacan, Artin

    2008-01-01

    A simple mixing of a hot- and cold-water stream at a T-junction was investigated. The main objective was to use mass and energy balance equations to predict mass low rates and the temperature of the mixed stream after the T-junction, and then compare these with the measured values. Furthermore, the thermocouple location after the T-junction and…

  6. Vortex dynamics in Josephson ladders with II-junctions

    DEFF Research Database (Denmark)

    Kornev, Victor K.; Klenov, N. V.; Oboznov, V.A.

    2004-01-01

    Both experimental and numerical studies of a self-frustrated triangular array of pi-junctions are reported. The array of SFS Josephson junctions shows a transition to the pi-state and self-frustration with a decrease in temperature. This manifests itself in a half-period shift of the bias critica...

  7. Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance Shallow Levels Characterization in Epitaxial GaAs by Acousto-Optic Reflectance

    Directory of Open Access Journals (Sweden)

    O. G. Ibarra-Manzano

    2012-02-01

    Full Text Available Optical spectra of light reflection are detected under an influence of ultrasonic wave (UWon a GaAs wafer. The differential spectrum is calculated as a difference between those taken under UW and without that influence on a sample. This acousto-optic differential reflectance(AODR spectrum contains some bands that represent the energetic levels of the shallow centers in a sample. A physical basis of this technique is related to a perturbation of local states by UW. Here, a method is developed for characterization of local states at the surfaces and interfaces in crystals and low-dimensional epitaxial structures based on microelectronics materials. A theoretical model is presented to explain AODR spectra. Also, experiments using epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimental results show that acousto-optic reflectance is an effective tool for characterization of shallow trapping centers in epitaxial semiconductor structures.En este trabajo, utilizamos el espectro de la luz reflejada en una muestra de Arsenuro de Galio (GaAs bajo la influencia de una onda ultrasónica. El diferencial espectral es calculado como una diferencia entre el espectro del material obtenido bajo la influencia del ultrasonido y aquél obtenido sin dicha influencia. Este diferencial de reflectancia espectral acusto-óptico (AODR contiene algunas bandas que representan los niveles energéticos de los centros en la superficie de la muestra. Esta técnica está basada en la perturbación de los estados locales generada por el ultrasonido. Particularmente, este trabajo presenta un método para caracterizar los estados locales en la superficie y las interfaces en los cristales, así como estructuras epiteliales de baja dimensión basadas en materiales semiconductores. Para ello, se presenta un modelo teórico para explicar dicho espectro de reflectancia diferencial (AODR. También se realizaron experimentos con estructuras de GaAs epitelial

  8. Optically induced bistable states in metal/tunnel-oxide/semiconductor /MTOS/ junctions

    Science.gov (United States)

    Lai, S. K.; Dressendorfer, P. V.; Ma, T. P.; Barker, R. C.

    1981-01-01

    A new switching phenomenon in metal-oxide semiconductor tunnel junction has been discovered. With a sufficiently large negative bias applied to the electrode, incident visible light of intensity greater than about 1 microW/sq cm causes the reverse-biased junction to switch from a low-current to a high-current state. It is believed that hot-electron-induced impact ionization provides the positive feedback necessary for switching, and causes the junction to remain in its high-current state after the optical excitation is removed. The junction may be switched back to the low-current state electrically. The basic junction characteristics have been measured, and a simple model for the switching phenomenon has been developed.

  9. An integrated architecture for shallow and deep processing

    OpenAIRE

    Crysmann, Berthold; Frank, Anette; Kiefer, Bernd; Müller, Stefan; Neumann, Günter; Piskorski, Jakub; Schäfer, Ulrich; Siegel, Melanie; Uszkoreit, Hans; Xu, Feiyu; Becker, Markus; Krieger, Hans-Ulrich

    2011-01-01

    We present an architecture for the integration of shallow and deep NLP components which is aimed at flexible combination of different language technologies for a range of practical current and future applications. In particular, we describe the integration of a high-level HPSG parsing system with different high-performance shallow components, ranging from named entity recognition to chunk parsing and shallow clause recognition. The NLP components enrich a representation of natural language te...

  10. NbN-AlN-NbN Josephson junctions on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Michael; Bohn, Christian; Voellinger, Marvin; Ilin, Konstantin; Siegel, Michael [KIT, Karlsruhe (Germany)

    2016-07-01

    Josephson junction technology is important for the realization of high quality cryogenic devices such as SQUIDs, RSFQ or SIS-mixers. The material system based on NbN/AlN/NbN tri-layer has gained a lot of interest, because it offers higher gap voltages and critical current densities compared to the well-established Nb/Al-AlOx/Nb technology. However, the realization of high quality Josephson junctions is more challenging. We developed a technology of Josephson junctions on a variety of substrates such as Silicon, Sapphire and Magnesium oxide and compared the quality parameters of these junctions at 4.2 K. The gap voltages achieved a range from 4 mV (for the junctions on Si) to 5.8 mV (in case of MgO substrates) which is considerably higher than those obtained from Nb based Josephson junctions. Another key parameter is the ratio of the subgap resistance to the normal state resistance. This so-called subgap ratio corresponds to the losses in a Josephson junction which have to be minimized. So far, subgap ratios of 26 have been achieved. Further careful optimization of the deposition conditions is required to maximize this ratio, The details of the optimization of technology and of characterization of NbN/AlN/NbN junctions will be presented and discussed.

  11. Superconducting tunnel-junction refrigerator

    International Nuclear Information System (INIS)

    Melton, R.G.; Paterson, J.L.; Kaplan, S.B.

    1980-01-01

    The dc current through an S 1 -S 2 tunnel junction, with Δ 2 greater than Δ 1 , when biased with eV 1 +Δ 2 , will lower the energy in S 1 . This energy reduction will be shared by the phonons and electrons. This device is shown to be analogous to a thermoelectric refrigerator with an effective Peltier coefficient π* approx. Δ 1 /e. Tunneling calculations yield the cooling power P/sub c/, the electrical power P/sub e/ supplied by the bias supply, and the cooling efficiency eta=P/sub c//P/sub e/. The maximum cooling power is obtained for eV= +- (Δ 2 -Δ 1 ) and t 1 =T 1 /T/sub c/1 approx. 0.9. Estimates are made of the temperature difference T 2 -T 1 achievable in Al-Pb and Sn-Pb junctions with an Al 2 O 3 tunneling barrier. The performance of this device is shown to yield a maximum cooling efficiency eta approx. = Δ 1 /(Δ 2 -Δ 1 ) which can be compared with that available in an ideal Carnot refrigerator of eta=T 1 /(T 2 -T 1 ). The development of a useful tunnel-junction refrigerator requires a tunneling barrier with an effective thermal conductance per unit area several orders of magnitude less than that provided by the A1 2 O 3 barrier in the Al-Pb and Sn-Pb systems

  12. Marker of cemento-periodontal ligament junction associated with periodontal regeneration.

    Science.gov (United States)

    Hara, Ryohko; Wato, Masahiro; Tanaka, Akio

    2005-06-01

    The purpose of this study was to identify factors promoting formation of the cemento-periodontal ligament junction. Regeneration of the cemento-periodontal ligament junction is an important factor in recovery of the connective tissue attachment to the cementum and it is important to identify all specific substances that promote its formation. To clarify the substances involved in cemento-periodontal ligament junction formation, we produced a monoclonal antibody (mAb) to human cemento-periodontal ligament junction (designated as the anti-TAP mAb) and examined its immunostaining properties and reactive antigen. Hybridomas producing monoclonal antibody against human cemento-periodontal ligament junction antigens were established by fusing P3U1 mouse myeloma cells with spleen cells from BALB/c mice immunized with homogenized human cemento-periodontal ligament junction. The mAb, the anti-TAP mAb for cemento-periodontal ligament junction, was then isolated. The immunoglobulin class and light chain of the mAb were examined using an isotyping kit. Before immunostaining, antigen determination using an enzymatic method or heating was conducted. Human teeth, hard tissue-forming lesions, and animal tissues were immunostained by the anti-TAP mAb. The anti-TAP mAb was positive in human cemento-periodontal ligament junction and predentin but negative in all other human and animal tissues examined. In the cemento-osseous lesions, the anti-TAP mAb was positive in the peripheral area of the cementum and cementum-like hard tissues and not in the bone and bone-like tissues. The anti-TAP mAb showed IgM (kappa) and recognized phosphoprotein. The anti-TAP mAb is potentially useful for developing new agents promoting cementogenesis and periodontal regeneration.

  13. Observation of molecular level behavior in molecular electronic junction device

    Science.gov (United States)

    Maitani, Masato

    In this dissertation, I utilize AFM based scanning probe measurement and surface enhanced Raman scattering based vibrational spectroscopic analysis to directly characterize topographic, electronic, and chemical properties of molecules confined in the local area of M3 junction to elucidate the molecular level behavior of molecular junction electronic devices. In the introduction, the characterization of molecular electronic devices with different types of metal-molecule-metal (M3) structures based upon self-assembled monolayers (SAMs) is reviewed. A background of the characterization methods I use in this dissertation, conducting probe atomic force microscopy (cp-AFM) and surface enhanced Raman spectroscopy (SERS), is provided in chapter 1. Several attempts are performed to create the ideal top metal contacts on SAMs by metal vapor phase deposition in order to prevent the metal penetration inducing critical defects of the molecular electronic devices. The scanning probe microscopy (SPM), such as cp-AFM, contact mode (c-) AFM and non-contact mode (nc-) AFM, in ultra high vacuum conditions are utilized to study the process of the metal-SAM interface construction in terms of the correlation between the morphological and electrical properties including the metal nucleation and filament generation as a function of the functionalization of long-chain alkane thiolate SAMs on Au. In chapter 2, the nascent condensation process of vapor phase Al deposition on inert and reactive SAMs are studied by SPM. The results of top deposition, penetration, and filament generation of deposited Al are discussed and compared to the results previously observed by spectroscopic measurements. Cp-AFM was shown to provide new insights into Al filament formation which has not been observed by conventional spectroscopic analysis. Additionally, the electronic characteristics of individual Al filaments are measured. Chapter 3 reveals SPM characterization of Au deposition onto --COOH terminated SAMs

  14. A numerical model of p-n junctions bordering on surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P.; Aberle, A.G.; Jianhua Zhao; Aihua Wang; Heiser, G. [University of New South Wales, Sydney (Australia). Centre for Photovolatic Engineering

    2002-10-01

    Many solar cell structures contain regions where the emitter p-n junction borders on the surface. If the surface is not well passivated, a large amount of recombination occurs in such regions. This type of recombination is influenced by the electrostatics of both the p-n junction and the surface, and hence it is different from the commonly described recombination phenomena occurring in the p-n junction within the bulk. We developed a two-dimensional model for the recombination mechanisms occurring in emitter p-n junctions bordering on surfaces. The model is validated by reproducing the experimental I-V curves of specially designed silicon solar cells. It is shown under which circumstances a poor surface passivation, near where the p-n junction borders on the surface, reduces the fill factor and the open-circuit voltage. The model can be applied to many other types of solar cells. (author)

  15. Preparation of CN /Carbon Nanotube Intramolecular Junctions by ...

    African Journals Online (AJOL)

    NICO

    intramolecular junctions composed of CNx with a bamboo-like structure and empty hollow carbon nanotubes were observed, ... and excellent thermal and mechanical properties.1,2 In recent .... tion of hexane, and the other segment with a curved compart- ... by an arrow lies at the interface of the junction between 'b' and.

  16. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.

  17. Proliferation of sharp kinks on cosmic (super)string loops with junctions

    International Nuclear Information System (INIS)

    Binetruy, P.; Bohe, A.; Hertog, T.; Steer, D. A.

    2010-01-01

    Motivated by their effect on the gravitational wave signal emitted by cosmic strings, we study the dynamics of kinks on strings of different tensions meeting at junctions. The propagation of a kink through a Y junction leads to the formation of three 'daughter' kinks. Assuming a uniform distribution of the incoming wave vectors at the junction, we find there is a significant region of configuration space in which the sharpness of at least one of the daughter kinks is enhanced relative to the sharpness of the initial kink. For closed loops with junctions we show this leads to an exponential growth in time of very sharp kinks. Using numerical simulations of realistic, evolving cosmic string loops with junctions to calculate the distribution of kink amplitudes as a function of time, we show that loops of this kind typically develop several orders of magnitude of very sharp kinks before the two junctions collide. This collision, or other effects such as gravitational backreaction, may end the proliferation.

  18. Field-In-Field Technique With Intrafractionally Modulated Junction Shifts for Craniospinal Irradiation

    International Nuclear Information System (INIS)

    Yom, Sue S.; Frija, Erik K. C.; Mahajan, Anita; Chang, Eric; Klein, Kelli C.; Shiu, Almon; Ohrt, Jared; Woo, Shiao

    2007-01-01

    Purpose: To plan craniospinal irradiation with 'field-in-field' (FIF) homogenization in combination with daily, intrafractional modulation of the field junctions, to minimize the possibility of spinal cord overdose. Methods and Materials: Lateral cranial fields and posterior spinal fields were planned using a forward-planned, step-and-shoot FIF technique. Field junctions were automatically modulated and custom-weighted for maximal homogeneity within each treatment fraction. Dose-volume histogram analyses and film dosimetry were used to assess results. Results: Plan inhomogeneity improved with FIF. Planning with daily modulated junction shifts provided consistent dose delivery during each fraction of treatment across the junctions. Modulation minimized the impact of a 5-mm setup error at the junction. Film dosimetry confirmed that no point in the junction exceeded the anticipated dose. Conclusions: Field-in-field planning and modulated junction shifts improve the homogeneity and consistency of daily dose delivery, simplify treatment, and reduce the impact of setup errors

  19. Direct analysis of Holliday junction resolving enzyme in a DNA origami nanostructure.

    Science.gov (United States)

    Suzuki, Yuki; Endo, Masayuki; Cañas, Cristina; Ayora, Silvia; Alonso, Juan C; Sugiyama, Hiroshi; Takeyasu, Kunio

    2014-06-01

    Holliday junction (HJ) resolution is a fundamental step for completion of homologous recombination. HJ resolving enzymes (resolvases) distort the junction structure upon binding and prior cleavage, raising the possibility that the reactivity of the enzyme can be affected by a particular geometry and topology at the junction. Here, we employed a DNA origami nano-scaffold in which each arm of a HJ was tethered through the base-pair hybridization, allowing us to make the junction core either flexible or inflexible by adjusting the length of the DNA arms. Both flexible and inflexible junctions bound to Bacillus subtilis RecU HJ resolvase, while only the flexible junction was efficiently resolved into two duplexes by this enzyme. This result indicates the importance of the structural malleability of the junction core for the reaction to proceed. Moreover, cleavage preferences of RecU-mediated reaction were addressed by analyzing morphology of the reaction products. © The Author(s) 2014. Published by Oxford University Press on behalf of Nucleic Acids Research.

  20. Discovery of an Ultra-diffuse Galaxy in the Pisces--Perseus Supercluster

    Science.gov (United States)

    Martínez-Delgado, David; Läsker, Ronald; Sharina, Margarita; Toloba, Elisa; Fliri, Jürgen; Beaton, Rachael; Valls-Gabaud, David; Karachentsev, Igor D.; Chonis, Taylor S.; Grebel, Eva K.; Forbes, Duncan A.; Romanowsky, Aaron J.; Gallego-Laborda, J.; Teuwen, Karel; Gómez-Flechoso, M. A.; Wang, Jie; Guhathakurta, Puragra; Kaisin, Serafim; Ho, Nhung

    2016-04-01

    We report the discovery of DGSAT I, an ultra-diffuse, quenched galaxy located 10.°4 in projection from the Andromeda galaxy (M31). This low-surface brightness galaxy (μV = 24.8 mag arcsec-2), found with a small amateur telescope, appears unresolved in sub-arcsecond archival Subaru/Suprime-Cam images, and hence has been missed by optical surveys relying on resolved star counts, in spite of its relatively large effective radius (Re(V) = 12″) and proximity (15‧) to the well-known dwarf spheroidal galaxy And II. Its red color (V - I = 1.0), shallow Sérsic index (nV = 0.68), and the absence of detectable Hα emission are typical properties of dwarf spheroidal galaxies and suggest that it is mainly composed of old stars. Initially interpreted as an interesting case of an isolated dwarf spheroidal galaxy in the local universe, our radial velocity measurement obtained with the BTA 6 m telescope (Vh = 5450 ± 40 km s-1) shows that this system is an M31-background galaxy associated with the filament of the Pisces-Perseus supercluster. At the distance of this cluster (˜78 Mpc), DGSAT I would have an Re ˜ 4.7 kpc and MV ˜ -16.3. Its properties resemble those of the ultra-diffuse galaxies (UDGs) recently discovered in the Coma cluster. DGSAT I is the first case of these rare UDGs found in this galaxy cluster. Unlike the UDGs associated with the Coma and Virgo clusters, DGSAT I is found in a much lower density environment, which provides a fresh constraint on the formation mechanisms for this intriguing class of galaxy.

  1. ULTRA-LIGHTWEIGHT CEMENT

    International Nuclear Information System (INIS)

    Fred Sabins

    2001-01-01

    The objective of this project is to develop an improved ultra-lightweight cement using ultralight hollow glass spheres (ULHS). Work reported herein addresses Task 1: Assess Ultra-Lightweight Cementing Problems and Task 3: Test Ultra-Lightweight Cements. Results reported this quarter include a review and summary of Halliburton Energy Services (HES) and BJ Services historical performance data for lightweight cement applications. These data are analyzed and compared to ULHS cement and foamed cement performances. Similar data is expected from Schlumberger, and an analysis of this data will be completed in the following phases of the project. Quality control testing of materials used to formulate ULHS cements in the laboratory was completed to establish baseline material performance standards. A testing protocol was developed employing standard procedures as well as procedures tailored to evaluate ULHS and foamed cement. This protocol is presented and discussed. Results of further testing of ULHS cements are presented along with an analysis to establish cement performance design criteria to be used during the remainder of the project. Finally, a list of relevant literature on lightweight cement performance is compiled for review during the next quarter

  2. Contour junctions defined by dynamic image deformations enhance perceptual transparency.

    Science.gov (United States)

    Kawabe, Takahiro; Nishida, Shin'ya

    2017-11-01

    The majority of work on the perception of transparency has focused on static images with luminance-defined contour junctions, but recent work has shown that dynamic image sequences with dynamic image deformations also provide information about transparency. The present study demonstrates that when part of a static image is dynamically deformed, contour junctions at which deforming and nondeforming contours are connected facilitate the deformation-based perception of a transparent layer. We found that the impression of a transparent layer was stronger when a dynamically deforming area was adjacent to static nondeforming areas than when presented alone. When contour junctions were not formed at the dynamic-static boundaries, however, the impression of a transparent layer was not facilitated by the presence of static surrounding areas. The effect of the deformation-defined junctions was attenuated when the spatial pattern of luminance contrast at the junctions was inconsistent with the perceived transparency related to luminance contrast, while the effect did not change when the spatial luminance pattern was consistent with it. In addition, the results showed that contour completions across the junctions were required for the perception of a transparent layer. These results indicate that deformation-defined junctions that involve contour completion between deforming and nondeforming regions enhance the perception of a transparent layer, and that the deformation-based perceptual transparency can be promoted by the simultaneous presence of appropriately configured luminance and contrast-other features that can also by themselves produce the sensation of perceiving transparency.

  3. Proposed differential-frequency-readout system by hysteretic Josephson junctions

    International Nuclear Information System (INIS)

    Wang, L.Z.; Duncan, R.V.

    1992-01-01

    The Josephson relation V=nhν/2e has been verified experimentally to 3 parts in 10 19 [A. K. Jain, J. E. Lukens, and J.-S. Tsai, Phys. Rev. Lett. 58, 1165 (1987)]. Motivated by this result, we propose a differential-frequency-readout system by two sets of hysteretic Josephson junctions rf biased at millimeter wavelengths. Because of the Josephson relation, the proposed differential-frequency-readout system is not limited by photon fluctuation, which limits most photon-detection schemes. In the context of the Stewart-McCumber model [W. C. Stewart, Appl. Phys. Lett. 12, 277 (1968); D. E. McCumber, J. Appl. Phys. 39, 3113 (1968)] of Josephson junctions, we show theoretically that the differential frequency of the two milliwave biases can be read out by the proposed system to unprecedented accuracy. The stability of the readout scheme is also discussed. The measurement uncertainty of the readout system resulting from the intrinsic thermal noise in the hysteretic junctions is shown to be insignificant. The study of two single junctions can be extended to two sets of Josephson junctions connected in series (series array) in this measurement scheme provided that junctions are separated by at least 10 μm [D. W. Jillie, J. E. Lukens, and Y. H. Kao, Phys. Rev. Lett. 38, 915 (1977)]. The sensitivity for the differential frequency detection may be increased by biasing both series arrays to a higher constant-voltage step

  4. Development of NbN Josephson junctions with Ta{sub x}N semi-metal barrier; application to RSFQ circuits; Etude et realisation de jonction Josephson en NbN a barriere semi-metallique en Ta{sub x}N; application aux circuits logiques RSFQ

    Energy Technology Data Exchange (ETDEWEB)

    Setzu, R

    2007-11-15

    This thesis research, brought to the development and optimization of SNS (Superconductor / Normal Metal / Superconductor) Josephson junctions with NbN electrodes and a high resistivity Ta{sub x}N barrier. We were able to point out Josephson oscillations for frequencies above 1 THz and operation temperatures up to 10 K, which constituted the original goal of the project. This property makes these junctions unique and well adapted for realizing ultra-fast RSFQ (Rapid Single Flux Quantum) logic circuits suitable for spatial telecommunications. We showed a good reproducibility of Ta{sub x}N film properties as a function of the sputtering parameters. The NbN/Ta{sub x}N/NbN tri-layers exhibit high critical temperature (16 K). The junctions showed a clear dependence of the R{sub n}I{sub c} product as a function of the partial nitrogen pressure inside the reactive plasma; the R{sub n}I{sub c} is the product between the junction critical current and its normal resistance, and indicates the upper limit Josephson frequency. We have also obtained some really high R{sub n}I{sub c} products, up to 3.74 mV at 4.2 K for critical current densities of about 15 kA/cm{sup 2}. Junctions show the expected Josephson behaviors, respectively Fraunhofer diffraction and Shapiro steps. up to 14 K. This allows expecting good circuit operations in a relaxed cryogenics environment (with respect to the niobium circuits limited at 4.2 K). The junctions appear to be self-shunted. The SNOP junctions J{sub c}-temperature dependence has been fitted by using the long SNS junction model in the dirty limit, which gives a normal metal coherence length of about 3.8 nm at 4.2 K. We have finally studied a multilayer fabrication process, including a common ground plane and bias resistors, suitable for RSFQ logic basic circuits. To conclude we have been able to show the performance superiority of NbN/Ta{sub x}N/NbN junctions over the actual niobium junctions, as well as their interest for realizing compact

  5. Simulating deep convection with a shallow convection scheme

    Directory of Open Access Journals (Sweden)

    C. Hohenegger

    2011-10-01

    Full Text Available Convective processes profoundly affect the global water and energy balance of our planet but remain a challenge for global climate modeling. Here we develop and investigate the suitability of a unified convection scheme, capable of handling both shallow and deep convection, to simulate cases of tropical oceanic convection, mid-latitude continental convection, and maritime shallow convection. To that aim, we employ large-eddy simulations (LES as a benchmark to test and refine a unified convection scheme implemented in the Single-column Community Atmosphere Model (SCAM. Our approach is motivated by previous cloud-resolving modeling studies, which have documented the gradual transition between shallow and deep convection and its possible importance for the simulated precipitation diurnal cycle.

    Analysis of the LES reveals that differences between shallow and deep convection, regarding cloud-base properties as well as entrainment/detrainment rates, can be related to the evaporation of precipitation. Parameterizing such effects and accordingly modifying the University of Washington shallow convection scheme, it is found that the new unified scheme can represent both shallow and deep convection as well as tropical and mid-latitude continental convection. Compared to the default SCAM version, the new scheme especially improves relative humidity, cloud cover and mass flux profiles. The new unified scheme also removes the well-known too early onset and peak of convective precipitation over mid-latitude continental areas.

  6. Human zonulin, a potential modulator of intestinal tight junctions.

    Science.gov (United States)

    Wang, W; Uzzau, S; Goldblum, S E; Fasano, A

    2000-12-01

    Intercellular tight junctions are dynamic structures involved in vectorial transport of water and electrolytes across the intestinal epithelium. Zonula occludens toxin derived from Vibrio cholerae interacts with a specific intestinal epithelial surface receptor, with subsequent activation of a complex intracellular cascade of events that regulate tight junction permeability. We postulated that this toxin may mimic the effect of a functionally and immunologically related endogenous modulator of intestinal tight junctions. Affinity-purified anti-zonula occludens toxin antibodies and the Ussing chamber assay were used to screen for one or more mammalian zonula occludens toxin analogues in both fetal and adult human intestine. A novel protein, zonulin, was identified that induces tight junction disassembly in non-human primate intestinal epithelia mounted in Ussing chambers. Comparison of amino acids in the active zonula occludens toxin fragment and zonulin permitted the identification of the putative receptor binding domain within the N-terminal region of the two proteins. Zonulin likely plays a pivotal role in tight junction regulation during developmental, physiological, and pathological processes, including tissue morphogenesis, movement of fluid, macromolecules and leukocytes between the intestinal lumen and the interstitium, and inflammatory/autoimmune disorders.

  7. Characterisation of baroreflex sensitivity of recreational ultra-endurance athletes.

    Science.gov (United States)

    Foulds, Heather J A; Cote, Anita T; Phillips, Aaron A; Charlesworth, Sarah A; Bredin, Shannon S D; Burr, Jamie F; Drury, Chipman Taylor; Ngai, Shirley; Fougere, Renee J; Ivey, Adam C; Warburton, Darren E R

    2014-01-01

    Altered autonomic function has been identified following ultra-endurance event participation among elite world-class athletes. Despite dramatic increases in recreational athlete participation in these ultra-endurance events, the physiological effects on these athletes are less known. This investigation sought to characterise changes in surrogate measures of autonomic function: heart rate variability (HRV), blood pressure variability (BPV) and baroreceptor sensitivity (BRS) following ultra-endurance race participation. Further, we sought to compare baseline measures among ultra-endurance athletes and recreationally active controls not participating in the ultra-endurance race. Recreational ultra-endurance athletes (n = 25, 44.6 ± 8.2 years, 8 females) and recreationally active age, sex and body mass index matched controls (n = 25) were evaluated. Measurements of HRV, BPV and BRS were collected pre- and post-race for recreational ultra-endurance athletes and at baseline, for recreationally active controls. Post-race, ultra-endurance athletes demonstrated significantly greater sympathetic modulation [low frequency (LF) power HRV: 50.3 ± 21.6 normalised units (n.u.) to 65.9 ± 20.4 n.u., p = 0.01] and significantly lower parasympathetic modulation [high frequency (HF) power HRV: 45.0 ± 22.4 n.u. to 23.9 ± 13.1 n.u., p HRV and BPV measures. Recreational ultra-endurance athletes experienced increased sympathetic tone and declines in BRS post-race, similar to previously reported elite world-class ultra-endurance athletes, though still within normal population ranges.

  8. Large eddy simulation of a wing-body junction flow

    Science.gov (United States)

    Ryu, Sungmin; Emory, Michael; Campos, Alejandro; Duraisamy, Karthik; Iaccarino, Gianluca

    2014-11-01

    We present numerical simulations of the wing-body junction flow experimentally investigated by Devenport & Simpson (1990). Wall-junction flows are common in engineering applications but relevant flow physics close to the corner region is not well understood. Moreover, performance of turbulence models for the body-junction case is not well characterized. Motivated by the insufficient investigations, we have numerically investigated the case with Reynolds-averaged Naiver-Stokes equation (RANS) and Large Eddy Simulation (LES) approaches. The Vreman model applied for the LES and SST k- ω model for the RANS simulation are validated focusing on the ability to predict turbulence statistics near the junction region. Moreover, a sensitivity study of the form of the Vreman model will also be presented. This work is funded under NASA Cooperative Agreement NNX11AI41A (Technical Monitor Dr. Stephen Woodruff)

  9. Mechanical break junctions: enormous information in a nanoscale package.

    Science.gov (United States)

    Natelson, Douglas

    2012-04-24

    Mechanical break junctions, particularly those in which a metal tip is repeatedly moved in and out of contact with a metal film, have provided many insights into electronic conduction at the atomic and molecular scale, most often by averaging over many possible junction configurations. This averaging throws away a great deal of information, and Makk et al. in this issue of ACS Nano demonstrate that, with both simulated and real experimental data, more sophisticated two-dimensional analysis methods can reveal information otherwise obscured in simple histograms. As additional measured quantities come into play in break junction experiments, including thermopower, noise, and optical response, these more sophisticated analytic approaches are likely to become even more powerful. While break junctions are not directly practical for useful electronic devices, they are incredibly valuable tools for unraveling the electronic transport physics relevant for ultrascaled nanoelectronics.

  10. BPS dynamics of the triple (p,q) string junction

    International Nuclear Information System (INIS)

    Rey, S.-J.; Yee, J.-T.

    1998-01-01

    We study the dynamics of the triple junction of (p,q) strings in type IIB string theory. We probe the tension and mass density of (p,q) strings by studying harmonic fluctuations of the triple junction. We show that they agree perfectly with the BPS formula provided a suitable geometric interpretation of the junction is given. We provide a precise statement of the BPS limit and force-balance property. At weak coupling and sufficiently dense limit, we argue that a (p,q) string embedded in the string network is a 'wiggly string', whose low-energy dynamics can be described via a renormalization group evolved, smooth effective non-relativistic string. We also suggest the possibility that, upon type IIB strings being promoted to the M-theory membrane, there can exist 'evanescent' bound-states at the triple junction in the continuum. (orig.)

  11. Symmetry breaking in SNS junctions: edge transport and field asymmetries

    Science.gov (United States)

    Suominen, Henri; Nichele, Fabrizio; Kjaergaard, Morten; Rasmussen, Asbjorn; Danon, Jeroen; Flensberg, Karsten; Levitov, Leonid; Shabani, Javad; Palmstrom, Chris; Marcus, Charles

    We study magnetic diffraction patterns in a tunable superconductor-semiconductor-superconductor junction. By utilizing epitaxial growth of aluminum on InAs/InGaAs we obtain transparent junctions which display a conventional Fraunhofer pattern of the critical current as a function of applied perpendicular magnetic field, B⊥. By studying the angular dependence of the critical current with applied magnetic fields in the plane of the junction we find a striking anisotropy. We attribute this effect to dephasing of Andreev states in the bulk of the junction, leading to SQUID like behavior when the magnetic field is applied parallel to current flow. Furthermore, in the presence of both in-plane and perpendicular fields, asymmetries in +/-B⊥ are observed. We suggest possible origins and discuss the role of spin-orbit and Zeeman physics together with a background disorder potential breaking spatial symmetries of the junction. Research supported by Microsoft Project Q, the Danish National Research Foundation and the NSF through the National Nanotechnology Infrastructure Network.

  12. Charge splitters and charge transport junctions based on guanine quadruplexes

    Science.gov (United States)

    Sha, Ruojie; Xiang, Limin; Liu, Chaoren; Balaeff, Alexander; Zhang, Yuqi; Zhang, Peng; Li, Yueqi; Beratan, David N.; Tao, Nongjian; Seeman, Nadrian C.

    2018-04-01

    Self-assembling circuit elements, such as current splitters or combiners at the molecular scale, require the design of building blocks with three or more terminals. A promising material for such building blocks is DNA, wherein multiple strands can self-assemble into multi-ended junctions, and nucleobase stacks can transport charge over long distances. However, nucleobase stacking is often disrupted at junction points, hindering electric charge transport between the two terminals of the junction. Here, we show that a guanine-quadruplex (G4) motif can be used as a connector element for a multi-ended DNA junction. By attaching specific terminal groups to the motif, we demonstrate that charges can enter the structure from one terminal at one end of a three-way G4 motif, and can exit from one of two terminals at the other end with minimal carrier transport attenuation. Moreover, we study four-way G4 junction structures by performing theoretical calculations to assist in the design and optimization of these connectors.

  13. E-cadherin junction formation involves an active kinetic nucleation process

    Science.gov (United States)

    Biswas, Kabir H.; Hartman, Kevin L.; Yu, Cheng-han; Harrison, Oliver J.; Song, Hang; Smith, Adam W.; Huang, William Y. C.; Lin, Wan-Chen; Guo, Zhenhuan; Padmanabhan, Anup; Troyanovsky, Sergey M.; Dustin, Michael L.; Shapiro, Lawrence; Honig, Barry; Zaidel-Bar, Ronen; Groves, Jay T.

    2015-01-01

    Epithelial (E)-cadherin-mediated cell−cell junctions play important roles in the development and maintenance of tissue structure in multicellular organisms. E-cadherin adhesion is thus a key element of the cellular microenvironment that provides both mechanical and biochemical signaling inputs. Here, we report in vitro reconstitution of junction-like structures between native E-cadherin in living cells and the extracellular domain of E-cadherin (E-cad-ECD) in a supported membrane. Junction formation in this hybrid live cell-supported membrane configuration requires both active processes within the living cell and a supported membrane with low E-cad-ECD mobility. The hybrid junctions recruit α-catenin and exhibit remodeled cortical actin. Observations suggest that the initial stages of junction formation in this hybrid system depend on the trans but not the cis interactions between E-cadherin molecules, and proceed via a nucleation process in which protrusion and retraction of filopodia play a key role. PMID:26290581

  14. Tunnel magnetoresistance in double spin filter junctions

    International Nuclear Information System (INIS)

    Saffarzadeh, Alireza

    2003-01-01

    We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron approximation, the dependence of the tunnel magnetoresistance (TMR) on the thickness of the central NM layer, bias voltage and temperature in the double SF junction are studied theoretically. It is shown that the TMR and electron-spin polarization in this structure can reach very large values under suitable conditions. The highest value of the TMR can reach 99%. By an appropriate choice of the thickness of the central NM layer, the degree of spin polarization in this structure will be higher than that of the single SF junctions. These results may be useful in designing future spin-polarized tunnelling devices

  15. Breaking gold nano-junctions simulation and analysis

    DEFF Research Database (Denmark)

    Lauritzen, Kasper Primdal

    , to predict the structure of a gold junction just as it breaks. This method is based on artificial neural networks and can be used on experimental data, even when it is trained purely on simulated data. The method is extended to other types of experimental traces, where it is trained without the use......Simulating the movements of individual atoms allows us to look at and investigate the physical processes that happen in an experiment. In this thesis I use simulations to support and improve experimental studies of breaking gold nano-junctions. By using molecular dynamics to study gold nanowires, I...... can investigate their breaking forces under varying conditions, like stretching rate or temperature. This resolves a confusion in the literature, where the breaking forces of two different breaking structures happen to coincide. The correlations between the rupture and reformation of a gold junction...

  16. Membrane junctions in Xenopus eggs: their distribution suggests a role in calcium regulation.

    Science.gov (United States)

    Gardiner, D M; Grey, R D

    1983-04-01

    We have observed the presence of membrane junctions formed between the plasma membrane and cortical endoplasmic reticulum of mature, unactivated eggs of xenopus laevis. The parallel, paired membranes of the junction are separated by a 10-mn gap within which electron-dense material is present. This material occurs in patches with an average center-to-center distance of approximately 30 nm. These junctions are rare in immature (but fully grown) oocytes (approximately 2 percent of the plasma membrane is associated with junctions) and increase dramatically during progesterone-induced maturation. Junctions in the mature, unactivated egg are two to three times more abundant in the animal hemisphere (25-30 percent of the plasma membrane associated with junction) as compared with the vegetal hemisphere (10-15 percent). Junction density decreases rapidly to values characteristic of immature oocytes in response to egg activation. The plasma membrane-ER junctions of xenopus eggs are strikingly similar in structure to membrane junctions in muscle cells thought to be essential in the triggering of intracellular calcium release from the sarcoplasmic reticulum. In addition, the junctions' distinctive, animal-vegetal polarity of distribution, their dramatic appearance during maturation, and their disapperance during activation are correlated with previously documented patterns of calcium-mediated events in anuran eggs. We discuss several lines of evidence supporting the hypothesis that these junctions in xenopus eggs are sites that transduce extracellular events into intracellular calcium release during fertilization and activation of development.

  17. Stretching of BDT-gold molecular junctions: Thiol or thiolate termination?

    KAUST Repository

    Souza, Amaury De Melo; Rungger, Ivan; Pontes, Renato Borges; Rocha, Alexandre Reily; Da Silva, Antô nio José Roque; Schwingenschlö gl, Udo; Sanvito, S.

    2014-01-01

    It is often assumed that the hydrogen atoms in the thiol groups of a benzene-1,4-dithiol dissociate when Au-benzene-1,4-dithiol-Au junctions are formed. We demonstrate, by stability and transport property calculations, that this assumption cannot be made. We show that the dissociative adsorption of methanethiol and benzene-1,4-dithiol molecules on a flat Au(111) surface is energetically unfavorable and that the activation barrier for this reaction is as high as 1 eV. For the molecule in the junction, our results show, for all electrode geometries studied, that the thiol junctions are energetically more stable than their thiolate counterparts. Due to the fact that density functional theory (DFT) within the local density approximation (LDA) underestimates the energy difference between the lowest unoccupied molecular orbital and the highest occupied molecular orbital by several electron-volts, and that it does not capture the renormalization of the energy levels due to the image charge effect, the conductance of the Au-benzene-1,4-dithiol-Au junctions is overestimated. After taking into account corrections due to image charge effects by means of constrained-DFT calculations and electrostatic classical models, we apply a scissor operator to correct the DFT energy level positions, and calculate the transport properties of the thiol and thiolate molecular junctions as a function of the electrode separation. For the thiol junctions, we show that the conductance decreases as the electrode separation increases, whereas the opposite trend is found for the thiolate junctions. Both behaviors have been observed in experiments, therefore pointing to the possible coexistence of both thiol and thiolate junctions. Moreover, the corrected conductance values, for both thiol and thiolate, are up to two orders of magnitude smaller than those calculated with DFT-LDA. This brings the theoretical results in quantitatively good agreement with experimental data.

  18. Steady-state properties of Josephson junctions with direct conductivity

    International Nuclear Information System (INIS)

    Zubkov, A.A.; Kupriyanov, M.Y.; Semenov, V.K.

    1981-01-01

    A new criterion for determining the kinetic inductance of Josephson junctions is introduced. The effects of temperature T, the critical temperatures of the superconducting electrodes T/sub c/1 and T/sub c/2, and the weak-link length on the kinetic inductance of ''dirty'' junctions with direct conductivity are analyzed within the framework of the Usadel equations. Numerical calculations show that both a large characteristic voltage and a nearly harmonic dependence of the current on the phase difference of the superconducting-electrode wave functions cannot be obtained by varying the junction parameters

  19. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian

    2014-12-08

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green\\'s function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  20. Spin-transfer torque in spin filter tunnel junctions

    KAUST Repository

    Ortiz Pauyac, Christian; Kalitsov, Alan; Manchon, Aurelien; Chshiev, Mairbek

    2014-01-01

    Spin-transfer torque in a class of magnetic tunnel junctions with noncollinear magnetizations, referred to as spin filter tunnel junctions, is studied within the tight-binding model using the nonequilibrium Green's function technique within Keldysh formalism. These junctions consist of one ferromagnet (FM) adjacent to a magnetic insulator (MI) or two FM separated by a MI. We find that the presence of the magnetic insulator dramatically enhances the magnitude of the spin-torque components compared to conventional magnetic tunnel junctions. The fieldlike torque is driven by the spin-dependent reflection at the MI/FM interface, which results in a small reduction of its amplitude when an insulating spacer (S) is inserted to decouple MI and FM layers. Meanwhile, the dampinglike torque is dominated by the tunneling electrons that experience the lowest barrier height. We propose a device of the form FM/(S)/MI/(S)/FM that takes advantage of these characteristics and allows for tuning the spin-torque magnitudes over a wide range just by rotation of the magnetization of the insulating layer.

  1. 7 CFR 58.144 - Pasteurization or ultra-pasteurization.

    Science.gov (United States)

    2010-01-01

    ... 7 Agriculture 3 2010-01-01 2010-01-01 false Pasteurization or ultra-pasteurization. 58.144 Section... Service 1 Operations and Operating Procedures § 58.144 Pasteurization or ultra-pasteurization. When pasteurization or ultra-pasteurization is intended or required, or when a product is designated “pasteurized” or...

  2. Neutron induced permanent damage in Josephson junctions

    International Nuclear Information System (INIS)

    Mueller, G.P.; Rosen, M.

    1982-01-01

    14 MeV neutron induced permanent changes in the critical current density of Josephson junctions due to displacement damage in the junction barrier are estimated using a worst case model and the binary collision simulation code MARLOWE. No likelihood of single event hard upsets is found in this model. It is estimated that a fluence of 10 18 -10 19 neutrons/cm 2 are required to change the critical current density by 5%

  3. Spinal Gap Junction Channels in Neuropathic Pain

    OpenAIRE

    Jeon, Young Hoon; Youn, Dong Ho

    2015-01-01

    Damage to peripheral nerves or the spinal cord is often accompanied by neuropathic pain, which is a complex, chronic pain state. Increasing evidence indicates that alterations in the expression and activity of gap junction channels in the spinal cord are involved in the development of neuropathic pain. Thus, this review briefly summarizes evidence that regulation of the expression, coupling, and activity of spinal gap junction channels modulates pain signals in neuropathic pain states induced...

  4. Junction temperature estimation for an advanced active power cycling test

    DEFF Research Database (Denmark)

    Choi, Uimin; Blaabjerg, Frede; Jørgensen, S.

    2015-01-01

    estimation method using on-state VCE for an advanced active power cycling test is proposed. The concept of the advanced power cycling test is explained first. Afterwards the junction temperature estimation method using on-state VCE and current is presented. Further, the method to improve the accuracy...... of the maximum junction temperature estimation is also proposed. Finally, the validity and effectiveness of the proposed method is confirmed by experimental results.......On-state collector-emitter voltage (VCE) is a good indicator to determine the wear-out condition of power device modules. Further, it is a one of the Temperature Sensitive Electrical Parameters (TSEPs) and thus can be used for junction temperature estimation. In this paper, the junction temperature...

  5. Photovoltaic Cells Improvised With Used Bipolar Junction Transistors

    International Nuclear Information System (INIS)

    Akintayo, J. A

    2002-01-01

    The understanding of the underlying principle that the solar cell consists of a p-n junction is exploited to adapt the basic NPN or PNP Bipolar Junction Transistors (BJT) to serve as solar cells. In this mode the in improvised solar cell have employed just the emitter and the base sections with an intact emitter/base junction as the active PN area. The improvised devices tested screened and sorted are wired up in strings, blocks and modules. The photovoltaic modules realised tested as close replica of solar cells with output voltage following insolation level. Further work need be done on the modules to make them generate usable levels of output voltage and current

  6. Tuning spin transport across two-dimensional organometallic junctions

    Science.gov (United States)

    Liu, Shuanglong; Wang, Yun-Peng; Li, Xiangguo; Fry, James N.; Cheng, Hai-Ping

    2018-01-01

    We study via first-principles modeling and simulation two-dimensional spintronic junctions made of metal-organic frameworks consisting of two Mn-phthalocyanine ferromagnetic metal leads and semiconducting Ni-phthalocyanine channels of various lengths. These systems exhibit a large tunneling magnetoresistance ratio; the transmission functions of such junctions can be tuned using gate voltage by three orders of magnitude. We find that the origin of this drastic change lies in the orbital alignment and hybridization between the leads and the center electronic states. With physical insight into the observed on-off phenomenon, we predict a gate-controlled spin current switch based on two-dimensional crystallines and offer general guidelines for designing spin junctions using 2D materials.

  7. NbCN Josephson junctions with AlN barriers

    International Nuclear Information System (INIS)

    Thomasson, S.L.; Murduck, J.M.; Chan, H.

    1991-01-01

    This paper reports on niobium carbonitride (NbCN) Josephson circuits which operate over a wider temperature range than either niobium or niobium nitride circuits. Higher operating temperature places NbCN technology more comfortably within the range of closed cycle refrigerators, a key factor in aerospace applications. We have fabricated tunnel junctions from NbCN films with transition temperatures up to 18 Kelvin. High quality NbCN tunnel junction fabrication generally requires low stress films with roughness less than the barrier thickness (∼20 Angstrom). We have developed scanning tunneling microscopy as a tool for measuring and optimizing film smoothness. Junctions formed in situ with AIN tunneling barriers show reproducible I-V characteristics

  8. Measurement of noise in YBCO bi-crystal junctions

    International Nuclear Information System (INIS)

    Kuznik, J.; Hao, L.; Macfarlane, J.C.; Pegrum, C.M.; Fischer, G.M.; Mygind, J.; Pedersen, N.F.; Beck, A.; Gross, R.

    1993-01-01

    This paper describes collaborative work between three institutions as part of an ESPRIT programme to fabricate and characterise grain-boundary junctions. Bi-crystal junctions were fabricated at Tuebingen on SrTiO 3 substrates with a 24 misorientation angle and a-b tilt. 200nm of c-axis YBCO was sputter-deposited using a hollow-cathode magnetron, and the films patterned with optical lithography and Ar ion beam etching (3). For test purposes junctions with a range of sizes were made, with widths between 4 and 20μm. These have been characterised for noise properties at 0.3 - 1kHz and 60kHz at Strathclyde, and at 70GHz at Lyngby. (orig.)

  9. Resistance switch employing a simple metal nanogap junction

    International Nuclear Information System (INIS)

    Naitoh, Yasuhisa; Horikawa, Masayo; Abe, Hidekazu; Shimizu, Tetsuo

    2006-01-01

    In recent years, several researchers have reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions. A large negative resistance is observed in the I-V characteristics of such a junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, such a junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage

  10. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H.

    2012-01-01

    -performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising

  11. Investigation on Single-Molecule Junctions Based on Current–Voltage Characteristics

    Directory of Open Access Journals (Sweden)

    Yuji Isshiki

    2018-02-01

    Full Text Available The relationship between the current through an electronic device and the voltage across its terminals is a current–voltage characteristic (I–V that determine basic device performance. Currently, I–V measurement on a single-molecule scale can be performed using break junction technique, where a single molecule junction can be prepared by trapping a single molecule into a nanogap between metal electrodes. The single-molecule I–Vs provide not only the device performance, but also reflect information on energy dispersion of the electronic state and the electron-molecular vibration coupling in the junction. This mini review focuses on recent representative studies on I–Vs of the single molecule junctions that cover investigation on the single-molecule diode property, the molecular vibration, and the electronic structure as a form of transmission probability, and electronic density of states, including the spin state of the single-molecule junctions. In addition, thermoelectronic measurements based on I–Vs and identification of the charged carriers (i.e., electrons or holes are presented. The analysis in the single-molecule I–Vs provides fundamental and essential information for a better understanding of the single-molecule science, and puts the single molecule junction to more practical use in molecular devices.

  12. Simulations of signal amplification and oscillations using a SNS junction

    International Nuclear Information System (INIS)

    Luiz, A.M.; Soares, V.; Nicolsky, R.

    1998-01-01

    A superconducting - normal metal - superconducting junction (SNS junction) may exhibit a low voltage negative differential resistance (LVNDR) effect over part of its current voltage characteristic (CVC). As the LVNDR effect is stable against a bias voltage at this CVC range, it should be possible to combine a SNS junction with conventional electronic circuits to obtain electronic devices such as mixers, amplifiers and oscillators. Making use of this remarkable effect, we show that an amplifier may be feasible by assembling a simple voltage divider made up of a SNS junction in series with a resistor. The amplifier circuit includes an adjustable DC voltage supply (the bias voltage) and an AC signal source with a given voltage. The SNS junction is connected in series with a resistor R. Choosing values of the load resistance R approximately equal to the module of the negative differential resistance (dV/dI), at the bias voltage, we may obtain large gains in this amplifier device. In order to get an oscillator, the SNS junction should be connected to a RLC tank circuit with a bias voltage adjusted in the range of the LVNDR region of its CVC. A power output of the order of one microwatt may be easily obtained. (orig.)

  13. Direct growth of ultra-long platinum nanolawns on a semiconductor photocatalyst

    Directory of Open Access Journals (Sweden)

    Chen In-Gann

    2011-01-01

    Full Text Available Abstract A template- and surfactant-free process, thermally assisted photoreduction, is developed to prepare vertically grown ultra-long Pt nanowires (NWs (about 30-40 nm in diameter, 5-6 μm in length, and up to 80 NWs/100 μm2 in the wire density on TiO2 coated substrates, including Si wafers and carbon fibers, with the assistance of the photocatalytic ability and semiconductor characteristics of TiO2. A remarkable aspect ratio of up to 200 can be achieved. TEM analytical results suggest that the Pt NWs are single-crystalline with a preferred 〈111〉 growth direction. The precursor adopted and the heat treatment conditions are crucial for the yield of NWs. The photoelectrons supplied by TiO2 gives rise to the formation of nano-sized Pt nuclei from salt melt or solution. The subsequent growth of NWs is supported by the thermal electrons which also generated from TiO2 during the post thermal treatment. The interactions between the ions and the electrons in the Pt/TiO2 junction are discussed in this study.

  14. MoRe-based and NbN-based tunnel junctions and their characteristics

    International Nuclear Information System (INIS)

    Shaternik, V.E.; Noskov, V.L.; Chubatyy, V.V.; Larkin, S.Yu.; Sizontov, V.M.; Miroshnikov, A.M.; Karmazin, A.A.

    2007-01-01

    Full text: Perspective [1] Josephson Mo-Re alloy-oxide-Pb, Mo-Re alloy-normal metal-oxide-Pb and Mo-Re alloy-normal metal-oxide- normal metal-Mo-Re alloy junctions have been fabricated and investigated. Thin (∼50-100 nm) MoRe superconducting films are deposited on Al 2 O 3 substrates by using a dc magnetron sputtering of MoRe target. Normal metal (Sn, Al) thin films are deposited on the MoRe films surfaces by thermal evaporation of metals in vacuum and oxidized to fabricate junctions oxide barriers. Quasiparticle I-V curves of the fabricated junctions were measured in wide range of voltages. To investigate a transparency spread for the fabricated junctions barriers the computer simulation of the measured quasiparticle I-V curves have been done in framework of the model of multiple Andreev reflections in double-barrier junction interfaces. It's demonstrated the investigated junctions can be described as highly asymmetric double-barrier Josephson junctions with great difference between the two barrier transparencies [2,3]. The result of the comparison of experimental quasiparticle I-V curves and calculated ones is proposed and discussed. Results of computer simulation of quasiparticles I-V curves of NbN-based junctions are presented and discussed. Also I-V curves of the fabricated junctions have been measured under microwave irradiation with 60 GHz frequency , clear Shapiro steps in the measured I-V curves were observed and discussed. (authors)

  15. Reliability of twin-dependent triple junction distributions measured from a section plane

    International Nuclear Information System (INIS)

    Hardy, Graden B.; Field, David P.

    2016-01-01

    Numerous studies indicate polycrystalline triple junctions are independent microstructural features with distinct properties from their constituent grain boundaries. Despite the influence of triple junctions on material properties, it is impractical to characterize triple junctions on a large scale using current three-dimensional methods. This work demonstrates the ability to characterize twin-dependent triple junction distributions from a section plane by adopting a grain boundary plane stereology. The technique is validated through simulated distributions and simulated electron back-scatter diffraction (EBSD) data. Measures of validation and convergence are adopted to demonstrate the quantitative reliability of the technique as well as the convergence behavior of twin-dependent triple junction distributions. This technique expands the characterization power of EBSD and prepares the way for characterizing general triple junction distributions from a section plane. - Graphical abstract: The distribution of planes forming a triple junction with a given twin boundary is shown partially in the stereographic projections below from a given projection. The plot on the left shows the ideal/measured distribution and the plot on the right shows the distribution obtained from the stereological method presented here.

  16. Nonlinearity in superconductivity and Josephson junctions

    International Nuclear Information System (INIS)

    Lazarides, N.

    1995-01-01

    Within the framework of the Bardeen, Cooper and Schrieffers (BCS) theory, the influence of anisotropy on superconducting states are investigated. Crystal anisotropy exists in un-conventional low temperature superconductors as e.g. U 1-x Th x Be 13 and in high temperature superconductors. Starting from a phenomenological pairing interaction of the electrons or holes, the BCS approach is used to derive a set of coupled nonlinear algebraic equations for the momentum dependent gap parameter. The emphasis is put on bifurcation phenomena between s-, d-wave and mixed s- and d-wave symmetry and the influence on measurable quantities as the electron specific heat, spin susceptibility and Josephson tunnelling. Pitch-fork and perturbed pitch-fork bifurcations have been found separating s- and d-wave superconducting states from mixed s- and d-wave states. The additional superconducting states give rise to jumps in the electron specific heat below the transition temperature. These jumps are rounded in the case of perturbed pitch-fork bifurcations. An experiment to measure the sign of the interlayer interaction using dc SQUIDS is suggested. The Ambegaokar-Baratoff formalism has been used for calculating the quasiparticle current and the two phase coherent tunnelling currents in a Josephson junction made of anisotropic superconductors. It is shown that anisotropy can lead to a reduction in the product of the normal resistance and the critical current. For low voltages across the junction the usual resistively shunted Josephson model can be used. Finally, bunching in long circular Josephson junctions and suppression of chaos in point junctions have been investigated. (au) 113 refs

  17. Breaking into the epithelial apical–junctional complex — news from pathogen hackers

    Science.gov (United States)

    Vogelmann, Roger; Amieva, Manuel R; Falkow, Stanley; Nelson, W James

    2012-01-01

    The epithelial apical–junctional complex is a key regulator of cellular functions. In addition, it is an important target for microbial pathogens that manipulate the cell to survive, proliferate and sometimes persist within a host. Out of a myriad of potential molecular targets, some bacterial and viral pathogens have selected a subset of protein targets at the apical–junctional complex of epithelial cells. Studying how microbes use these targets also teaches us about the inherent physiological properties of host molecules in the context of normal junctional structure and function. Thus, we have learned that three recently uncovered components of the apical–junctional complex of the Ig superfamily — junctional adhesion molecule, Nectin and the coxsackievirus and adenovirus receptor — are important regulators of junction structure and function and represent critical targets of microbial virulence gene products. PMID:15037310

  18. Final Scientific/Technical Report: Electronics for Large Superconducting Tunnel Junction Detector Arrays for Synchrotron Soft X-ray Research

    Energy Technology Data Exchange (ETDEWEB)

    Warburton, William K

    2009-03-06

    Superconducting tunnel junction (STJ) detectors offer a an approach to detecting soft x-rays with energy resolutions 4-5 times better and at rates 10 faster than traditions semiconductor detectors. To make such detectors feasible, however, then need to be deployed in large arrays of order 1000 detectors, which in turn implies that their processing electronics must be compact, fully computer controlled, and low cost per channel while still delivering ultra-low noise performance so as to not degrade the STJ's performance. We report on our progress in designing a compact, low cost preamplifier intended for this application. In particular, we were able to produce a prototype preamplifier of 2 sq-cm area and a parts cost of less than $30 that matched the energy resolution of the best conventional system to date and demonstrated its ability to acquire an STJ I-V curve under computer control, the critical step for determining and setting the detectors' operating points under software control.

  19. Charge transport in junctions between d-wave superconductors

    International Nuclear Information System (INIS)

    Barash, Y.S.; Galaktionov, A.V.; Zaikin, A.D.

    1995-01-01

    We develop a microscopic analysis of superconducting and dissipative currents in junctions between superconductors with d-wave symmetry of the order parameter. We study the proximity effect in such superconductors and show that for certain crystal orientations the superconducting order parameter can be essentially suppressed in the vicinity of a nontransparent specularly reflecting boundary. This effect strongly influences the value and the angular dependence of the dc Josephson current j S . At T∼T c it leads to a crossover between j S ∝T c -T and j S ∝(T c -T) 2 respectively for homogeneous and nonhomogeneous distribution of the order parameter in the vicinity of a tunnel junction. We show that at low temperatures the current-phase relation j S (cphi) for superconductor--normal-metal--superconductor junctions and short weak links between d-wave superconductors is essentially nonharmonic and contains a discontinuity at cphi=0. This leads to further interesting features of such systems which can be used for pairing symmetry tests in high-temperature superconductors (HTSC). We also investigated the low-temperature I-V curves of normal-metal--superconductor and superconductor-superconductor tunnel junctions and demonstrated that depending on the junction type and crystal orientation these curves show zero-bias anomalies I∝V 2 , I∝V 2 ln(1/V), and I∝V 3 caused by the gapless behavior of the order parameter in d-wave superconductors. Many of our results agree well with recent experimental findings for HTSC compounds

  20. Symmetric truncations of the shallow-water equations

    International Nuclear Information System (INIS)

    Rouhi, A.; Abarbanel, H.D.I.

    1993-01-01

    Conservation of potential vorticity in Eulerian fluids reflects particle interchange symmetry in the Lagrangian fluid version of the same theory. The algebra associated with this symmetry in the shallow-water equations is studied here, and we give a method for truncating the degrees of freedom of the theory which preserves a maximal number of invariants associated with this algebra. The finite-dimensional symmetry associated with keeping only N modes of the shallow-water flow is SU(N). In the limit where the number of modes goes to infinity (N→∞) all the conservation laws connected with potential vorticity conservation are recovered. We also present a Hamiltonian which is invariant under this truncated symmetry and which reduces to the familiar shallow-water Hamiltonian when N→∞. All this provides a finite-dimensional framework for numerical work with the shallow-water equations which preserves not only energy and enstrophy but all other known conserved quantities consistent with the finite number of degrees of freedom. The extension of these ideas to other nearly two-dimensional flows is discussed

  1. Towards quantum signatures in a swept-bias Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Losert, Harald; Vogel, Karl; Schleich, Wolfgang P. [Institut fuer Quantenphysik and Center for Integrated Quantum Science and Technology (IQST), Universitaet Ulm, D-89069 Ulm (Germany)

    2016-07-01

    Josephson junctions are one of the best examples for the observation of macroscopic quantum tunneling. The phase difference in a current-biased Josephson junction behaves like the position of a particle in a tilted washboard potential. The escape of this phase-particle corresponds to the voltage switching of the associated junction. Quantum mechanically, the escape from the washboard potential can be explained as tunneling from the ground state, or an excited state. However, it has been shown, that in the case of periodic driving the experimental data for quantum mechanical key features, e.g. Rabi oscillations or energy level quantization, can be reproduced by a completely classical description. Motivated by this discussion, we investigate a swept-bias Josephson junction in the case of a large critical current. In particular, we contrast the switching current distributions resulting from a quantum mechanical and classical description of the time evolution.

  2. Origins and Driving Mechanisms for Shallow Methane Accumulations on the Svyatogor Ridge, Fram Strait

    Science.gov (United States)

    Waghorn, K. A.; Bunz, S.; Plaza-Faverola, A. A.; Westvig, I. M.; Johnson, J. E.

    2015-12-01

    The Svyatogor Ridge, located west of the Knipovich Spreading Ridge (KR) and south of the Molloy Transform Fault (MTF), is hypothesized to have once been the south tip of Vestnesa Ridge; a large sediment drift that was offset during the last 2 Ma along the MTF. The sedimentary cover across Svyatogor Ridge is limited, compared to Vestnesa Ridge, and basement outcrops are identified ~850 mbsf on the apex of the ridge. Despite the limited sedimentation, and its unique location at the intersection between the KR and MTF, Svyatogor Ridge has evidence of shallow gas accumulations; a strong BSR indicating a gas hydrate and underlying free gas system, and fluid flow pathways to the seafloor culminating in pockmarks. Using a high-resolution P-Cable 3D seismic survey, 2D seismic, and multibeam bathymetry data, we investigate how tectonic and sedimentary regimes have influenced the formation of a well-developed gas hydrate system. Sedimentation related with the Vestnesa drift on Svyatogor Ridge is interpreted to have begun ~2-3 Ma. The young age of the underlying oceanic crust, and subsequent synrift sediments below drift strata, suggests gas production from early Miocene aged hydrocarbon source identified in ODP Site 909 to the west, is unlikely in this region. Additionally, given the ultra-slow, magma limited spreading regime of the KR, we do not expect significant thermogenic methane generation from shallow magmatic sources. Therefore, in addition to some microbial gas production, Johnson et al. (2015) hypothesize a contribution from an abiotic source may explain the well-developed gas hydrate system. Large-scale basement faults identified in the seismic data are interpreted as detachment faults, which have exhumed relatively young ultramafic rocks. These detachment faults act as conduits for fluid flow, allowing circulation of seawater to drive serpentinization and subsequently act as pathways for fluids and abiotic methane to reach the shallow subsurface. This work aims

  3. Hyperglycaemia and diabetes impair gap junctional communication among astrocytes.

    Science.gov (United States)

    Gandhi, Gautam K; Ball, Kelly K; Cruz, Nancy F; Dienel, Gerald A

    2010-03-15

    Sensory and cognitive impairments have been documented in diabetic humans and animals, but the pathophysiology of diabetes in the central nervous system is poorly understood. Because a high glucose level disrupts gap junctional communication in various cell types and astrocytes are extensively coupled by gap junctions to form large syncytia, the influence of experimental diabetes on gap junction channel-mediated dye transfer was assessed in astrocytes in tissue culture and in brain slices from diabetic rats. Astrocytes grown in 15-25 mmol/l glucose had a slow-onset, poorly reversible decrement in gap junctional communication compared with those grown in 5.5 mmol/l glucose. Astrocytes in brain slices from adult STZ (streptozotocin)-treated rats at 20-24 weeks after the onset of diabetes also exhibited reduced dye transfer. In cultured astrocytes grown in high glucose, increased oxidative stress preceded the decrement in dye transfer by several days, and gap junctional impairment was prevented, but not rescued, after its manifestation by compounds that can block or reduce oxidative stress. In sharp contrast with these findings, chaperone molecules known to facilitate protein folding could prevent and rescue gap junctional impairment, even in the presence of elevated glucose level and oxidative stress. Immunostaining of Cx (connexin) 43 and 30, but not Cx26, was altered by growth in high glucose. Disruption of astrocytic trafficking of metabolites and signalling molecules may alter interactions among astrocytes, neurons and endothelial cells and contribute to changes in brain function in diabetes. Involvement of the microvasculature may contribute to diabetic complications in the brain, the cardiovascular system and other organs.

  4. Construction of tunable peptide nucleic acid junctions.

    Science.gov (United States)

    Duan, Tanghui; He, Liu; Tokura, Yu; Liu, Xin; Wu, Yuzhou; Shi, Zhengshuang

    2018-03-15

    We report here the construction of 3-way and 4-way peptide nucleic acid (PNA) junctions as basic structural units for PNA nanostructuring. The incorporation of amino acid residues into PNA chains makes PNA nanostructures with more structural complexity and architectural flexibility possible, as exemplified by building 3-way PNA junctions with tunable nanopores. Given that PNA nanostructures have good thermal and enzymatic stabilities, they are expected to have broad potential applications in biosensing, drug delivery and bioengineering.

  5. Craniovertebral junction stenosis in Lenz-Majewski syndrome

    Energy Technology Data Exchange (ETDEWEB)

    Mizuguchi, Koichi; Ishigro, Akira [National Center for Child Health and Development, Department of General Pediatrics and Interdisciplinary Medicine, Setagaya-ku, Tokyo (Japan); Miyazaki, Osamu [National Center for Child Health and Development, Department of Radiology, Tokyo (Japan); Nishimura, Gen [Tokyo Metropolitan Children' s Medical Center, Department of Pediatric Imaging, Tokyo (Japan)

    2015-09-15

    We report a girl with Lenz-Majewski syndrome associated with craniovertebral junction stenosis that led to communicating hydrocephalus and cervical myelopathy. The life-threatening complication was related to progressive craniovertebral hyperostosis that rapidly exacerbated during early childhood. Despite initial success of surgical intervention at 2 years of age, she developed apneic spells and died suddenly at age 5 years. Close monitoring for craniovertebral junction stenosis is essential to reduce morbidity and mortality in children with Lenz-Majewski syndrome. (orig.)

  6. Shallow Melt Apparatus for Semicontinuous Czochralski Crystal Growth

    Science.gov (United States)

    Wang, T.; Ciszek, T. F.

    2006-01-10

    In a single crystal pulling apparatus for providing a Czochralski crystal growth process, the improvement of a shallow melt crucible (20) to eliminate the necessity supplying a large quantity of feed stock materials that had to be preloaded in a deep crucible to grow a large ingot, comprising a gas tight container a crucible with a deepened periphery (25) to prevent snapping of a shallow melt and reduce turbulent melt convection; source supply means for adding source material to the semiconductor melt; a double barrier (23) to minimize heat transfer between the deepened periphery (25) and the shallow melt in the growth compartment; offset holes (24) in the double barrier (23) to increase melt travel length between the deepened periphery (25) and the shallow growth compartment; and the interface heater/heat sink (22) to control the interface shape and crystal growth rate.

  7. Controlling formation of single-molecule junctions by electrochemical reduction of diazonium terminal groups.

    Science.gov (United States)

    Hines, Thomas; Díez-Pérez, Ismael; Nakamura, Hisao; Shimazaki, Tomomi; Asai, Yoshihiro; Tao, Nongjian

    2013-03-06

    We report controlling the formation of single-molecule junctions by means of electrochemically reducing two axialdiazonium terminal groups on a molecule, thereby producing direct Au-C covalent bonds in situ between the molecule and gold electrodes. We report a yield enhancement in molecular junction formation as the electrochemical potential of both junction electrodes approach the reduction potential of the diazonium terminal groups. Step length analysis shows that the molecular junction is significantly more stable, and can be pulled over a longer distance than a comparable junction created with amine anchoring bonds. The stability of the junction is explained by the calculated lower binding energy associated with the direct Au-C bond compared with the Au-N bond.

  8. Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions

    International Nuclear Information System (INIS)

    Zou Jianfei; Jin Guojun; Ma Yuqiang

    2009-01-01

    We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

  9. Negative tunnel magnetoresistance and spin transport in ferromagnetic graphene junctions.

    Science.gov (United States)

    Zou, Jianfei; Jin, Guojun; Ma, Yu-Qiang

    2009-03-25

    We study the tunnel magnetoresistance (TMR) and spin transport in ferromagnetic graphene junctions composed of ferromagnetic graphene (FG) and normal graphene (NG) layers. It is found that the TMR in the FG/NG/FG junction oscillates from positive to negative values with respect to the chemical potential adjusted by the gate voltage in the barrier region when the Fermi level is low enough. Particularly, the conventionally defined TMR in the FG/FG/FG junction oscillates periodically from a positive to negative value with increasing the barrier height at any Fermi level. The spin polarization of the current through the FG/FG/FG junction also has an oscillating behavior with increasing barrier height, whose oscillating amplitude can be modulated by the exchange splitting in the ferromagnetic graphene.

  10. Gap junction protein connexin-43 interacts directly with microtubules

    NARCIS (Netherlands)

    Giepmans, B N; Verlaan, I; Hengeveld, T; Janssen, H; Calafat, J; Falk, M M; Moolenaar, W H

    2001-01-01

    Gap junctions are specialized cell-cell junctions that mediate intercellular communication. They are composed of connexin proteins, which form transmembrane channels for small molecules [1, 2]. The C-terminal tail of connexin-43 (Cx43), the most widely expressed connexin member, has been implicated

  11. Voltage-dependent conductance states of a single-molecule junction

    DEFF Research Database (Denmark)

    Wang, Y F; Néel, N; Kröger, J

    2012-01-01

    Ag–Sn-phthalocyanine–Ag junctions are shown to exhibit three conductance states. While the junctions are conductive at low bias, their impedance drastically increases above a critical bias. Two-level fluctuations occur at intermediate bias. These characteristics may be used to protect a nanoscale...

  12. Introduction to Ultra Wideband for Wireless Communications

    DEFF Research Database (Denmark)

    Nikookar, Homayoun; Prasad, Ramjee

    wireless channels, interference, signal processing as well as applications and standardization activities are addressed. Introduction to Ultra Wideband for Wireless Communications provides easy-to-understand material to (graduate) students and researchers working in the field of commercial UWB wireless......Ultra Wideband (UWB) Technology is the cutting edge technology for wireless communications with a wide range of applications. In Introduction to Ultra Wideband for Wireless Communications UWB principles and technologies for wireless communications are explained clearly. Key issues such as UWB...... communications. Due to tutorial nature of the book it can also be adopted as a textbook on the subject in the Telecommunications Engineering curriculum. Problems at the end of each chapter extend the reader's understanding of the subject. Introduction to Ultra Wideband for Wireless Communications will aslo...

  13. Superconducting proximity effect in mesoscopic superconductor/normal-metal junctions

    CERN Document Server

    Takayanagi, H; Toyoda, E

    1999-01-01

    The superconducting proximity effect is discussed in mesoscopic superconductor/normal-metal junctions. The newly-developed theory shows long-range phase-coherent effect which explaines early experimental results of giant magnetoresistance oscillations in an Andreev interferometer. The theory also shows that the proximity correction to the conductance (PCC) has a reentrant behavior as a function of energy. The reentrant behavior is systematically studied in a gated superconductor-semiconductor junction. A negative PCC is observed in the case of a weak coupling between the normal metal and the external reservoir. Phase coherent ac effect is also observed when rf is irradiated to the junction.

  14. Building memristive and radiation hardness TiO{sub 2}-based junctions

    Energy Technology Data Exchange (ETDEWEB)

    Ghenzi, N., E-mail: n.ghenzi@gmail.com [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Rubi, D. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Mangano, E.; Gimenez, G. [Instituto Nacional de Tecnología Industrial (INTI) (Argentina); Lell, J. [Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (Argentina); Zelcer, A. [Gerencia Química, Comisión Nacional de Energía Atómica (Argentina); ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); Stoliar, P. [ECyT, UNSAM, Martín de Irigoyen 3100, 1650 San Martín, Bs As (Argentina); IMN, Université de Nantes, CNRS, 2 rue de la Houssinière, BP 32229, 44322 Nantes (France); and others

    2014-01-01

    We study micro-scale TiO{sub 2} junctions that are suitable to be used as resistive random-access memory nonvolatile devices with radiation hardness memristive properties. The fabrication and structural and electrical characterization of the junctions are presented. We obtained a retentivity of 10{sup 5} s, an endurance of 10{sup 4} cycles and reliable switching with short electrical pulses (time-width below 10 ns). Additionally, the devices were exposed to 25 MeV oxygen ions. Then, we performed electrical measurements comparing pristine and irradiated devices in order to check the feasibility of using these junctions as memory elements with memristive and radiation hardness properties. - Highlights: • We fabricated radiation hardness memristive metal insulator metal junctions. • We characterized the structural properties of the devices. • We showed the feasibility of the junctions as a non-volatile memory.

  15. Innovation: study of 'ultra-short' time reactions

    International Nuclear Information System (INIS)

    Anon.

    2001-01-01

    This short article presents the new Elyse facility of Orsay-Paris 11 university for the study of ultra-short chemical and biochemical phenomena. Elyse uses the 'pump-probe' technique which consists in two perfectly synchronized electron and photon pulses. It comprises a 3 to 9 MeV electron accelerator with a HF gun photo-triggered with a laser. Elyse can initiate reactions using ultra-short electron pulses (radiolysis) or ultra-short photon pulses (photolysis). (J.S.)

  16. Effects of flow depth and wall roughness on turbulence in compound channels

    International Nuclear Information System (INIS)

    Prinos, P.; Townsend, R.; Tavoularis, S.

    1985-01-01

    Current methods for estimating discharge in compound channels often lead to large errors. The error is largely due to momentum transfer mechanism (MTM) generated in the junction regions of the flow field (between adjacent deep and shallow zones). The MTM adversely affects system conveyance, particularly when the velocity differential between the deep and shallow zones is large. Improved prediction methods, therefore, will necessarily reflect the MTM's presence and its effect on the compound flow field. The mechanism's influence on system hydraulics is best examined by analysing the related turbulence characteristics in the junction zones of the compound section. Townsend reported increased turbulence levels in the junction region between a main channel and its shallower flood plain zone and Elsawy, McKee and McKeogh found that observed normal turbulent stresses in a similar region were of the same order of magnitude as the apparent shear stress on the junction's vertical interface plane. The objective of the present study is to measure turbulent stresses in the junction region of a symmetrical compound open channel and examine their dependence on relative depth and relative boundary roughness. Further details of this phase of the larger study are presented elsewhere. (author)

  17. Microwave oscillator using arrays of long Josephson junctions

    International Nuclear Information System (INIS)

    Pagano, S.; Monaco, R.; Costabile, G.

    1989-01-01

    The authors report on measurements performed on integrated superconducting devices based on arrays of long Josephson tunnel junctions operating in the resonant fluxon oscillation regime (i.e. biased on the Zero Field Steps). The electromagnetic coupling among the junction causes a mutual phase-locking of the fluxon oscillations with a corresponding increase of the emitted power and a decrease of the signal linewidth. This phase-locked state can be controlled by means of an external dc bias current and magnetic field. The effect of the generated microwave signal has been observed on a small Josephson tunnel junction coupled to the array via a microstrip transmission line. The feasibility of the reported devices as local oscillators in an integrated microwave Josephson receiver is discussed

  18. Filtering microfluidic bubble trains at a symmetric junction.

    Science.gov (United States)

    Parthiban, Pravien; Khan, Saif A

    2012-02-07

    We report how a nominally symmetric microfluidic junction can be used to sort all bubbles of an incoming train exclusively into one of its arms. The existence of this "filter" regime is unexpected, given that the junction is symmetric. We analyze this behavior by quantifying how bubbles modulate the hydrodynamic resistance in microchannels and show how speeding up a bubble train whilst preserving its spatial periodicity can lead to filtering at a nominally symmetric junction. We further show how such an asymmetric traffic of bubble trains can be triggered in symmetric geometries by identifying conditions wherein the resistance to flow decreases with an increase in the number of bubbles in the microchannel and derive an exact criterion to predict the same.

  19. Ultra wide band antennas

    CERN Document Server

    Begaud, Xavier

    2013-01-01

    Ultra Wide Band Technology (UWB) has reached a level of maturity that allows us to offer wireless links with either high or low data rates. These wireless links are frequently associated with a location capability for which ultimate accuracy varies with the inverse of the frequency bandwidth. Using time or frequency domain waveforms, they are currently the subject of international standards facilitating their commercial implementation. Drawing up a complete state of the art, Ultra Wide Band Antennas is aimed at students, engineers and researchers and presents a summary of internationally recog

  20. Creation of stable molecular junctions with a custom-designed scanning tunneling microscope.

    Science.gov (United States)

    Lee, Woochul; Reddy, Pramod

    2011-12-02

    The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (scanning tunneling microscope that enables the creation of metal-single molecule-metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy-at the single-molecule level-on Au-hexanedithiol-Au, Au-octanedithiol-Au and Au-decanedithiol-Au junctions.

  1. 75 FR 76294 - Radio Broadcasting Services: Pacific Junction, IA

    Science.gov (United States)

    2010-12-08

    ... FEDERAL COMMUNICATIONS COMMISSION 47 CFR Part 73 [DA 10-2236; MB Docket No. 10-108] Radio Broadcasting Services: Pacific Junction, IA AGENCY: Federal Communications Commission. ACTION: Final rule. SUMMARY: The staff deletes FM Channel 299C2 at Pacific Junction, Iowa, because the record in this...

  2. P-N semiconductor junctions used as X-ray detectors

    International Nuclear Information System (INIS)

    Pela, C.A.; Bruco, J.L.; Navas, E.A.; Paula, E. de; Guilardi Neto, T.

    1987-01-01

    The current response of some comercial P-N semiconductor junctions in function of X-ray incidency, in 40 to 140 KVp band used in diagnosis was characterized. Some junctions were also exposed to radiation of 80 to 250 KVp used in therapy. (C.G.C.) [pt

  3. Effect of quasi-particle injection on retrapping current of Josephson junction

    OpenAIRE

    Utsunomiya, K.; Yagi, Ryuta

    2006-01-01

    We report that the energy dissipation of Josephson junction can be controlled by quasi-particle injection. We fabricated two Josephson junctions on the narrow aluminum wire and controlled the energy dissipation of one junction by quasi-particle injection from the other. We observed the retrapping current increased as the quasi-particles were injected. We also studied the heating effect of our measurement.

  4. Ultra-high-speed Optical Signal Processing using Silicon Photonics

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

    with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

  5. Multicentre dosimetric comparison of photon-junctioning techniques in head and neck radiotherapy

    International Nuclear Information System (INIS)

    Kron, T.

    2003-01-01

    Because many head and neck radiotherapy treatment techniques rely on a junction between X-ray fields, it was the aim of the present study to investigate the use of different junctioning techniques and the affect on the dose across the junction. Techniques in use at nine radiotherapy centres in Australia were investigated using thermoluminescence dosimetry (TLD). The techniques could broadly be divided into two groups: (i) use of the light field to match the fields after moving the patient; and (ii) use of asymmetric collimation to create a single isocentre located in the junction. The mean dose at the junction and its reproducibility was studied in five consecutive treatments in each centre using 25 TLD chips placed throughout the junction in an anthropomorphic phantom. There was a tendency for the mono-isocentric technique to deliver a lower, more accurate mean dose at the junction (Group I: 1.22 Gy (n = 8) vs Group II: 0.96 Gy (n = 5) for 1 Gy planned, some centres contributed to both technique) with greater reproducibility (Group I: 9.6%, Group II: 5.1 % of the mean dose). We conclude that a mono-isocentric treatment technique has the potential to deliver a more accurate and reproducible dose distribution at the field junction of photon beams in head and neck treatment. Copyright (2003) Blackwell Science Pty Ltd

  6. The string-junction picture of multiquark states: an update

    CERN Document Server

    Rossi, Giancarlo

    2016-06-07

    We recall and update, both theoretically and phenomenologically, our (nearly) forty-years-old proposal of a string-junction as a necessary complement to the conventional classification of hadrons based just on their quark-antiquark constituents. In that proposal single (though in general metastable) hadronic states are associated with "irreducible" gauge-invariant operators consisting of Wilson lines (visualized as strings of color flux tubes) that may either end on a quark or an antiquark, or annihilate in triplets at a junction $J$ or an anti-junction $\\bar{J}$. For the junction-free sector (ordinary $q\\, \\bar{q}$ mesons and glueballs) the picture is supported by large-$N$ (number of colors) considerations as well as by a lattice strong-coupling expansion. Both imply the famous OZI rule suppressing quark-antiquark annihilation diagrams. For hadrons with $J$ and/or $\\bar{J}$ constituents the same expansions support our proposal, including its generalization of the OZI rule to the suppression of $J-\\bar{J}$ a...

  7. The physical analysis on electrical junction of junctionless FET

    Directory of Open Access Journals (Sweden)

    Lun-Chun Chen

    2017-02-01

    Full Text Available We propose the concept of the electrical junction in a junctionless (JL field-effect-transistor (FET to illustrate the transfer characteristics of the JL FET. In this work, nanowire (NW junctionless poly-Si thin-film transistors are used to demonstrate this conception of the electrical junction. Though the dopant and the dosage of the source, of the drain, and of the channel are exactly the same in the JL FET, the transfer characteristics of the JL FET is similar to these of the conventional inversion-mode FET rather than these of a resistor, which is because of the electrical junction at the boundary of the gate and the drain in the JL FET. The electrical junction helps us to understand the JL FET, and also to explain the superior transfer characteristic of the JL FET with the gated raised S/D (Gout structure which reveals low drain-induced-barrier-lowering (DIBL and low breakdown voltage of ion impact ionization.

  8. Molecular electronics: some views on transport junctions and beyond.

    Science.gov (United States)

    Joachim, Christian; Ratner, Mark A

    2005-06-21

    The field of molecular electronics comprises a fundamental set of issues concerning the electronic response of molecules as parts of a mesoscopic structure and a technology-facing area of science. We will overview some important aspects of these subfields. The most advanced ideas in the field involve the use of molecules as individual logic or memory units and are broadly based on using the quantum state space of the molecule. Current work in molecular electronics usually addresses molecular junction transport, where the molecule acts as a barrier for incoming electrons: This is the fundamental Landauer idea of "conduction as scattering" generalized to molecular junction structures. Another point of view in terms of superexchange as a guiding mechanism for coherent electron transfer through the molecular bridge is discussed. Molecules generally exhibit relatively strong vibronic coupling. The last section of this overview focuses on vibronic effects, including inelastic electron tunneling spectroscopy, hysteresis in junction charge transport, and negative differential resistance in molecular transport junctions.

  9. Microscopic tunneling theory of long Josephson junctions

    DEFF Research Database (Denmark)

    Grønbech-Jensen, N.; Hattel, Søren A.; Samuelsen, Mogens Rugholm

    1992-01-01

    We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate that the detai......We present a numerical scheme for solving a nonlinear partial integro-differential equation with nonlocal time dependence. The equation describes the dynamics in a long Josephson junction modeled by use of the microscopic theory for tunneling between superconductors. We demonstrate...

  10. Mechanically controllable break junctions for molecular electronics.

    Science.gov (United States)

    Xiang, Dong; Jeong, Hyunhak; Lee, Takhee; Mayer, Dirk

    2013-09-20

    A mechanically controllable break junction (MCBJ) represents a fundamental technique for the investigation of molecular electronic junctions, especially for the study of the electronic properties of single molecules. With unique advantages, the MCBJ technique has provided substantial insight into charge transport processes in molecules. In this review, the techniques for sample fabrication, operation and the various applications of MCBJs are introduced and the history, challenges and future of MCBJs are discussed. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Study on the Deposition Rate Depending on Substrate Position by Using Ion Beam Sputtering Deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Ion beams have been used for over thirty years to modify materials in manufacturing of integrated circuits, and improving the corrosion properties of surfaces. Recently, the requirements for ion beam processes are becoming especially challenging in the following areas : ultra shallow junction formation for LSI fabrication, low damage high rate ion beam sputtering and smoothing, high quality functional surface treatment for electrical and optical properties. Ion beam sputtering is an attractive technology for the deposition of thin film coatings onto a broad variety of polymer, Si-wafer, lightweight substrates. Demand for the decoration metal is increasing. In addition, lightweight of parts is important, because of energy issues in the industries. Although a lot of researches have been done with conventional PVD methods for the deposition of metal or ceramic films on the surface of the polymer, there are still adhesion problems.

  12. Application of the photomodulated reflectance technique to the monitoring of metal layers

    Energy Technology Data Exchange (ETDEWEB)

    Dobos, Gabor; Lenk, Sandor; Ujhelyi, Ferenc; Szita, Zsofia; Kocsanyi, Laszlo [Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki ut 8, 1111 Budapest (Hungary); Somogyi, Andras [Semilab Corporation, Prielle Kornelia ut 2, 1117 Budapest (Hungary)

    2011-09-15

    Photomodulated reflectance (PMR) measurement techniques are currently used for the monitoring of ultra-shallow junctions. This paper discusses the possibility of applying them to the characterisation of metal layers. A finite element method based computer model has been created to study the dependence of the PMR signal on different sample parameters. We present the results of these simulations and show that the method can be used to establish the thickness of a metal layer (if the material is known) and it can also provide information about the metal/semiconductor interface. This information might be used to characterise the barrier seed layer beneath the metal, by a non-contact and non-destructive way. Simulation results are also supported by actual measurements on test samples. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Bar dynamics and channel junctions in scale-experiments of estuaries

    Science.gov (United States)

    Leuven, J.; Braat, L.; van Dijk, W. M.; Haas, T. D.; Kleinhans, M. G.

    2017-12-01

    The evolution of channels and bars in estuaries has high socio-economic relevance, with strong implications for navigation, dredging and ecology. However, the spatial and temporal evolution of channels and bars in estuaries is poorly understood. Here, we study feedbacks of bar morphodynamics on widening and narrowing of estuaries. Therefore, we conducted an experiment in a 20 m long and 3 m wide tilting flume (the 'Metronome'), in which we monitored the evolution of a self-formed estuary that developed from an intial straight channel into an irregular planform with multiple channels, braided bars and a meandering ebb channel. At locations where the estuary width is confined, major channel junctions occur, while the zones between the junctions are characterised by high braiding indices, periodically migrating channels and a relatively large estuary width. The junction locations were forced by the in- and outflow locations on the sides of the ebb-tidal delta and at the location where the channel pattern transitions from multiple channels into a single channel. In the middle of the estuary, self-confinement occurred by sedimentation on the sides of the estuary, which caused another major junction. The channel orientation at the junctions steers the morphodynamics of channels and bars immediately landward and seaward, because the orientation of inflow from the ebb-tidal delta and landward river perpetually varies. In natural systems major junction locations are mostly forced by inherited geology or human engineering. However, this study concludes that even without external forcing, the estuary planform will not converge to an ideal shape but will self-confine at major junctions and widens in the adjacent zones, resulting in an irregular planform shape.

  14. T-junction cross-flow mixing with thermally driven density stratification

    Energy Technology Data Exchange (ETDEWEB)

    Kickhofel, John, E-mail: jkickhofel@gmail.com [Laboratory of Nuclear Energy Systems, ETH Zurich, Sonneggstrasse 3, 8057 Zurich (Switzerland); Prasser, Horst-Michael, E-mail: prasser@lke.mavt.ethz.ch [Laboratory of Nuclear Energy Systems, ETH Zurich, Sonneggstrasse 3, 8057 Zurich (Switzerland); Selvam, P. Karthick, E-mail: karthick.selvam@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany); Laurien, Eckart, E-mail: eckart.laurien@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany); Kulenovic, Rudi, E-mail: rudi.kulenovic@ike.uni-stuttgart.de [Institute of Nuclear Technology and Energy Systems (IKE), University of Stuttgart, Pfaffenwaldring 31, 70569 Stuttgart (Germany)

    2016-12-01

    Highlights: • Mesh sensor for realistic nuclear thermal hydraulic scenarios is demonstrated. • Flow temperature behavior across a wide range of Richardson numbers measured. • Upstream stratified flow in the T-junction results in a thermal shock scenario. • Large, stable near-wall thermal gradients exist in spite of turbulent flows. - Abstract: As a means of further elucidating turbulence- and stratification-driven thermal fatigue in the vicinity of T-junctions in nuclear power plants, a series of experiments have been conducted at the high temperature high pressure fluid–structure interaction T-junction facility of the University of Stuttgart with novel fluid measurement instrumentation. T-junction mixing with large fluid temperature gradients results in complex flow behavior, the result of density driven effects. Deionized water mixing at temperature differences of up to 232 K at 7 MPa pressure have been investigated in a T-junction with main pipe diameter 71.8 mm and branch line diameter 38.9 mm. The experiments have been performed with fixed flow rates of 0.4 kg/s in the main pipe and 0.1 kg/s in the branch line. A novel electrode-mesh sensor compatible with the DN80 PN100 pipeline upstream and downstream of the T-junction has been utilized as a temperature sensor providing a high density information in the pipe cross-section in both space and time. Additionally, in-flow and in-wall thermocouples quantify the damping of thermal fluctuations by the wall material. The results indicate that large inflow temperature differences lead to strong turbulence damping, and ultimately stable stratification extending both downstream and upstream of the T-junction resulting in large local thermal gradients.

  15. Realization of φ Josephson junctions with a ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Sickinger, Hanna Sabine

    2014-01-01

    In this thesis, φ Josephson junctions based on 0-π junctions with a ferromagnetic interlayer are studied. Josephson junctions (JJs) with a ferromagnetic interlayer can have a phase drop of 0 or π in the ground state, depending on the thickness of the ferromagnet (0 JJs or π JJs). Also, 0-π JJs can be realized, where one segment of the junction (if taken separately) is in the 0 state, while the other segment is in the π state. One can use these π Josephson junctions as a device in superconducting circuits, where it provides a constant phase shift, i.e., it acts as a π phase battery. A generalization of a π JJ is a φ JJ, which has the phase ±φ in the ground state. The value of φ can be chosen by design and tuned in the interval 0<φ<π. The φ JJs used in this experiment were fabricated as 0-π JJs with asymmetric current densities in the 0 and π facets. This system can be described by an effective current-phase relation which is tunable by an externally applied magnetic field. The first experimental evidence of such a φ JJ is presented in this thesis. In particular it is demonstrated that (a) a φ JJ has two ground states +φ and -φ, (b) the unknown state can be detected (read out) by measuring the critical current I c (I c+ or I c- ), and (c) a particular state can be prepared by applying a magnetic field or a special bias sweep sequence. These properties of a φ JJ can be utilized, for example, as a memory cell (classical bit). Furthermore, a φ Josephson junction can be used as a deterministic ratchet. This is due to the tunable asymmetry of the potential that can be changed by the external magnetic field. Rectification curves are observed for the overdamped and the underdamped case. Moreover, experimental data of the retrapping process of the phase of a φ Josephson junction depending on the temperature is presented.

  16. Andreev reflexion studies on planar hybrid SNS-junctions based on 122-thin films

    Energy Technology Data Exchange (ETDEWEB)

    Doering, Sebastian; Schmidt, Stefan; Schmidl, Frank; Tympel, Volker; Seidel, Paul [Friedrich-Schiller-Universitaet Jena, Institut fuer Festkoerperphysik, Helmholtzweg 5, Jena (Germany); Haindl, Silvia; Kurth, Fritz; Iida, Kazumasa; Holzapfel, Bernhard [IFW Dresden, Institut fuer Metallische Werkstoffe, 01069 Dresden (Germany)

    2012-07-01

    To investigate the properties of iron-based superconductors, we prepared hybrid junctions in thin film technique. Therefore two geometries were prepared, a planar SNS-junction and an edge junction. The base electrode was made of Ba(Fe{sub 0.9}Co{sub 0.1}){sub 2}As{sub 2} thin films, a sputtered gold layer acts as normal barrier for the planar junction and for the counter electrode we used the conventional superconductor lead. We measured the electrical properties of each electrode, as well as the junctions itself. To obtain information about the order parameter symmetry, we show the differential conductance and compare with different variations of an extended BTK-model. We show differences and commonalities between the results of both junction geometries.

  17. Ultra high energy gamma-ray astronomy

    International Nuclear Information System (INIS)

    Wdowczyk, J.

    1986-01-01

    The experimental data on ultra high energy γ-rays are reviewed and a comparison of the properties of photon and proton initiated shower is made. The consequences of the existence of the strong ultra high energy γ-ray sources for other observations is analysed and possible mechanisms for the production of ultra high energy γ-rays in the sources are discussed. It is demonstrated that if the γ-rays are produced via cosmic ray interactions the sources have to produce very high fluxes of cosmic ray particles. In fact it is possible that a small number of such sources can supply the whole Galactic cosmic ray flux

  18. The Control of Junction Flows

    National Research Council Canada - National Science Library

    Smith, Charles

    1997-01-01

    An experimental study of the effects of spatially-limited (i.e. localized) surface suction on unsteady laminar and turbulent junction flows was performed using hydrogen bubble flow visualization and Particle Image Velocimetry (PIV...

  19. Spin-flip effects on the supercurrent through mesoscopic superconducting junctions

    International Nuclear Information System (INIS)

    Pan Hui; Lin Tsunghan

    2005-01-01

    We investigate the spin-flip effects on the Andreev bound states and the supercurrent in a superconductor/quantum-dot/superconductor system, theoretically. The spin-flip scattering in the quantum dot can reverse the supercurrent flowing through the system, which results in a π-junction transition. By controlling the energy level of the quantum dot, the π-junction transition can be caused to occur again. The two mechanisms of the π-junction transitions are interpreted within the picture of Andreev bound states

  20. Electron Transport through Porphyrin Molecular Junctions

    Science.gov (United States)

    Zhou, Qi

    The goal of this work is to study the properties that would affect the electron transport through a porphyrin molecular junction. This work contributes to the field of electron transport in molecular junctions in the following 3 aspects. First of all, by carrying out experiments comparing the conductance of the iron (III) porphyrin (protected) and the free base porphyrin (protected), it is confirmed that the molecular energy level broadening and shifting occurs for porphyrin molecules when coupled with the metal electrodes, and this level broadening and shifting plays an important role in the electron transport through molecular junctions. Secondly, by carrying out an in-situ deprotection of the acetyl-protected free base porphyrin molecules, it is found out that the presence of acetyl groups reduces the conductance. Thirdly, by incorporating the Matrix-assisted laser desorption/ionization (MALDI) spectrum and the in-situ deprotection prior to formation of molecular junctions, it allows a more precise understanding of the molecules involved in the formation of molecular junctions, and therefore allows an accurate analysis of the conductance histogram. The molecules are prepared by self-assembly and the junctions are formed using a Scanning Tunneling Microscopy (STM) molecular break junction technique. The porphyrin molecules are characterized by MALDI in solution before self-assembly to a gold/mica substrate. The self-assembled monolayers (SAMs) of porphyrins on gold are characterized by Ultraviolet-visible (UV-Vis) reflection spectroscopy to confirm that the molecules are attached to the substrate. The SAMs are then characterized by Angle-Resolved X-ray photoelectron spectroscopy (ARXPS) to determine the thickness and the average molecular orientation of the molecular layer. The electron transport is measured by conductance-displacement (G-S) experiments under a given bias (-0.4V). The conductance value of a single molecule is identified by a statistical analysis

  1. Gap junctions and epileptic seizures--two sides of the same coin?

    Directory of Open Access Journals (Sweden)

    Vladislav Volman

    Full Text Available Electrical synapses (gap junctions play a pivotal role in the synchronization of neuronal ensembles which also makes them likely agonists of pathological brain activity. Although large body of experimental data and theoretical considerations indicate that coupling neurons by electrical synapses promotes synchronous activity (and thus is potentially epileptogenic, some recent evidence questions the hypothesis of gap junctions being among purely epileptogenic factors. In particular, an expression of inter-neuronal gap junctions is often found to be higher after the experimentally induced seizures than before. Here we used a computational modeling approach to address the role of neuronal gap junctions in shaping the stability of a network to perturbations that are often associated with the onset of epileptic seizures. We show that under some circumstances, the addition of gap junctions can increase the dynamical stability of a network and thus suppress the collective electrical activity associated with seizures. This implies that the experimentally observed post-seizure additions of gap junctions could serve to prevent further escalations, suggesting furthermore that they are a consequence of an adaptive response of the neuronal network to the pathological activity. However, if the seizures are strong and persistent, our model predicts the existence of a critical tipping point after which additional gap junctions no longer suppress but strongly facilitate the escalation of epileptic seizures. Our results thus reveal a complex role of electrical coupling in relation to epileptiform events. Which dynamic scenario (seizure suppression or seizure escalation is ultimately adopted by the network depends critically on the strength and duration of seizures, in turn emphasizing the importance of temporal and causal aspects when linking gap junctions with epilepsy.

  2. Ligament augmentation for prevention of proximal junctional kyphosis and proximal junctional failure in adult spinal deformity.

    Science.gov (United States)

    Safaee, Michael M; Deviren, Vedat; Dalle Ore, Cecilia; Scheer, Justin K; Lau, Darryl; Osorio, Joseph A; Nicholls, Fred; Ames, Christopher P

    2018-05-01

    OBJECTIVE Proximal junctional kyphosis (PJK) is a well-recognized, yet incompletely defined, complication of adult spinal deformity surgery. There is no standardized definition for PJK, but most studies describe PJK as an increase in the proximal junctional angle (PJA) of greater than 10°-20°. Ligament augmentation is a novel strategy for PJK reduction that provides strength to the upper instrumented vertebra (UIV) and adjacent segments while also reducing junctional stress at those levels. METHODS In this study, ligament augmentation was used in a consecutive series of adult spinal deformity patients at a single institution. Patient demographics, including age; sex; indication for surgery; revision surgery; surgical approach; and use of 3-column osteotomies, vertebroplasty, or hook fixation at the UIV, were collected. The PJA was measured preoperatively and at last follow-up using 36-inch radiographs. Data on change in PJA and need for revision surgery were collected. Univariate and multivariate analyses were performed to identify factors associated with change in PJA and proximal junctional failure (PJF), defined as PJK requiring surgical correction. RESULTS A total of 200 consecutive patients were included: 100 patients before implementation of ligament augmentation and 100 patients after implementation of this technique. The mean age of the ligament augmentation cohort was 66 years, and 67% of patients were women. Over half of these cases (51%) were revision surgeries, with 38% involving a combined anterior or lateral and posterior approach. The mean change in PJA was 6° in the ligament augmentation group compared with 14° in the control group (p historical cohort, ligament augmentation is associated with a significant decrease in PJK and PJF. These data support the implementation of ligament augmentation in surgery for adult spinal deformity, particularly in patients with a high risk of developing PJK and PJF.

  3. Nonlocal Cooper pair splitting in a pSn-junction

    NARCIS (Netherlands)

    Veldhorst, M.; Brinkman, Alexander

    2010-01-01

    Perfect Cooper pair splitting is proposed, based on crossed Andreev reflection (CAR) in a p-type semiconductor-superconductor-n-type semiconductor (pSn) junction. The ideal splitting is caused by the energy filtering that is enforced by the band structure of the electrodes. The pSn junction is

  4. Gas-liquid flow splitting in T-junction with inclined lateral arm

    Science.gov (United States)

    Yang, Le-le; Liu, Shuo; Li, Hua; Zhang, Jian; Wu, Ying-xiang; Xu, Jing-yu

    2018-02-01

    This paper studies the gas-liquid flow splitting in T-junction with inclined lateral arm. The separation mechanism of the T-junction is related to the pressure distribution in the T-junction. It is shown that the separation efficiency strongly depends on the inclination angle, when the angle ranges from 0° to 30°, while not so strongly for angles in the range from 30° to 90° Increasing the number of connecting tubes is helpful for the gas-liquid separation, and under the present test conditions, with four connecting tubes, a good separation performance can be achieved. Accordingly, a multi-tube Y-junction separator with four connecting tubes is designed for the experimental investigation. A good agreement between the simulated and measured data shows that there is an optimal split ratio to achieve the best performance for the multi-tube Y-junction separator.

  5. Thermopower in double planar tunnel junctions with ferromagnetic barriers and nonmagnetic electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Wilczyński, M., E-mail: wilczyns@if.pw.edu.pl

    2017-01-01

    The Seebeck effect is investigated in double planar tunnel junctions consisting of nonmagnetic electrodes and the central layer separated by ferromagnetic barriers. Calculations are performed in the linear response theory using the free-electron model. The thermopower is analyzed as a function of the thickness of the central layer, temperature of the junctions and the relative orientation of magnetic moments of the barriers. It has been found that the thermopower can be significantly enhanced in the junction with special central layer thickness due to electron tunneling by resonant states. The thickness of the central layer for which the thermopower is enhanced depends not only on the temperature of the junction but also on the orientation of magnetic moments in the barriers. - Highlights: • Thermopower in the double planar junctions with magnetic barriers is analyzed. • Thermopower can be enhanced due to the resonant tunneling. • Thermopower depends on the magnetic configuration of the junction.

  6. Single-molecule detection of dihydroazulene photo-thermal reaction using break junction technique

    Science.gov (United States)

    Huang, Cancan; Jevric, Martyn; Borges, Anders; Olsen, Stine T.; Hamill, Joseph M.; Zheng, Jue-Ting; Yang, Yang; Rudnev, Alexander; Baghernejad, Masoud; Broekmann, Peter; Petersen, Anne Ugleholdt; Wandlowski, Thomas; Mikkelsen, Kurt V.; Solomon, Gemma C.; Brøndsted Nielsen, Mogens; Hong, Wenjing

    2017-05-01

    Charge transport by tunnelling is one of the most ubiquitous elementary processes in nature. Small structural changes in a molecular junction can lead to significant difference in the single-molecule electronic properties, offering a tremendous opportunity to examine a reaction on the single-molecule scale by monitoring the conductance changes. Here, we explore the potential of the single-molecule break junction technique in the detection of photo-thermal reaction processes of a photochromic dihydroazulene/vinylheptafulvene system. Statistical analysis of the break junction experiments provides a quantitative approach for probing the reaction kinetics and reversibility, including the occurrence of isomerization during the reaction. The product ratios observed when switching the system in the junction does not follow those observed in solution studies (both experiment and theory), suggesting that the junction environment was perturbing the process significantly. This study opens the possibility of using nano-structured environments like molecular junctions to tailor product ratios in chemical reactions.

  7. A semiconductor nanowire Josephson junction microwave laser

    Science.gov (United States)

    Cassidy, Maja; Uilhoorn, Willemijn; Kroll, James; de Jong, Damaz; van Woerkom, David; Nygard, Jesper; Krogstrup, Peter; Kouwenhoven, Leo

    We present measurements of microwave lasing from a single Al/InAs/Al nanowire Josephson junction strongly coupled to a high quality factor superconducting cavity. Application of a DC bias voltage to the Josephson junction results in photon emission into the cavity when the bias voltage is equal to a multiple of the cavity frequency. At large voltage biases, the strong non-linearity of the circuit allows for efficient down conversion of high frequency microwave photons down to multiple photons at the fundamental frequency of the cavity. In this regime, the emission linewidth narrows significantly below the bare cavity linewidth to 50%. The junction-cavity coupling and laser emission can be tuned rapidly via an external gate, making it suitable to be integrated into a scalable qubit architecture as a versatile source of coherent microwave radiation. This work has been supported by the Netherlands Organisation for Scientific Research (NWO/OCW), Foundation for Fundamental Research on Matter (FOM), European Research Council (ERC), and Microsoft Corporation Station Q.

  8. Magnetometry with Low-Resistance Proximity Josephson Junction

    Science.gov (United States)

    Jabdaraghi, R. N.; Peltonen, J. T.; Golubev, D. S.; Pekola, J. P.

    2018-06-01

    We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb-Cu-Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb-Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55 nA/Φ_0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al-Cu-Al SNS junction and an Al tunnel probe (Al-SQUIPT).

  9. A case report of craniovertebral junction intradural extramedullary neurenteric cyst

    Directory of Open Access Journals (Sweden)

    Rajeshwari S Vhora

    2014-01-01

    Full Text Available A neurenteric cyst of the craniocervical (CV junction, as a cause of bulbomedullary compression, is very rare. An abnormal communication between the endoderm and neuroectoderm during the third week of embryogenesis may be responsible for its formation. It is a rare spinal condition. The most frequent location is at the lower cervical and higher thoracic spine. Neurenteric cysts of the craniocervical junction are even rarer. We report the case of a CV junction intradural neurenteric cyst. Magnetic Resonance Imaging (MRI of our patient demonstrated an intradural extramedullary process of the craniocervical junction. A surgical posterior approach allowed gross total resection of the lesion. The histopathology of the surgical specimen showed that the cyst wall was made up of fibrocollagen walls lined with a partially ciliated columnar epithelium.

  10. Instabilities in thin tunnel junctions

    International Nuclear Information System (INIS)

    Konkin, M.K.; Adler, J.G.

    1978-01-01

    Tunnel junctions prepared for inelastic electron tunneling spectroscopy are often plagued by instabilities in the 0-500-meV range. This paper relates the bias at which the instability occurs to the barrier thickness

  11. Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

    Science.gov (United States)

    Es-Sakhi, Azzedin D.

    concept of negative capacitance. The new field effect transistor (FET) based on ferroelectric insulator named Silicon-On-Ferroelectric Insulator Field Effect Transistor (SOF-FET). This proposal is a promising methodology for future ultra-low-power applications, because it demonstrates the ability to replace the silicon-bulk based MOSFET, and offers subthreshold swing significantly lower than 60mV/decade and reduced threshold voltage to form a conducting channel. The SOF-FET can also solve the issue of junction leakage (due to the presence of unipolar junction between the top plate of the negative capacitance and the diffused areas that form the transistor source and drain). In this device the charge hungry ferroelectric film already limits the leakage.

  12. Single-electron tunnel junction array

    International Nuclear Information System (INIS)

    Likharev, K.K.; Bakhvalov, N.S.; Kazacha, G.S.; Serdyukova, S.I.

    1989-01-01

    The authors have carried out an analysis of statics and dynamics of uniform one-dimensional arrays of ultrasmall tunnel junctions. The correlated single-electron tunneling in the junctions of the array results in its behavior qualitatively similar to that of the Josephson transmission line. In particular, external electric fields applied to the array edges can inject single-electron-charged solitons into the array interior. Shape of such soliton and character of its interactions with other solitons and the array edges are very similar to those of the Josephson vortices (sine-Gordon solitons) in the Josephson transmission line. Under certain conditions, a coherent motion of the soliton train along the array is possible, resulting in generation of narrowband SET oscillations with frequency f/sub s/ = /e where is the dc current flowing along the array

  13. CO2/Brine transport into shallow aquifers along fault zones.

    Science.gov (United States)

    Keating, Elizabeth H; Newell, Dennis L; Viswanathan, Hari; Carey, J W; Zyvoloski, G; Pawar, Rajesh

    2013-01-02

    Unintended release of CO(2) from carbon sequestration reservoirs poses a well-recognized risk to groundwater quality. Research has largely focused on in situ CO(2)-induced pH depression and subsequent trace metal mobilization. In this paper we focus on a second mechanism: upward intrusion of displaced brine or brackish-water into a shallow aquifer as a result of CO(2) injection. Studies of two natural analog sites provide insights into physical and chemical mechanisms controlling both brackish water and CO(2) intrusion into shallow aquifers along fault zones. At the Chimayó, New Mexico site, shallow groundwater near the fault is enriched in CO(2) and, in some places, salinity is significantly elevated. In contrast, at the Springerville, Arizona site CO(2) is leaking upward through brine aquifers but does not appear to be increasing salinity in the shallow aquifer. Using multiphase transport simulations we show conditions under which significant CO(2) can be transported through deep brine aquifers into shallow layers. Only a subset of these conditions favor entrainment of salinity into the shallow aquifer: high aspect-ratio leakage pathways and viscous coupling between the fluid phases. Recognition of the conditions under which salinity is favored to be cotransported with CO(2) into shallow aquifers will be important in environmental risk assessments.

  14. Three-dimensional models of conventional and vertical junction laser-photovoltaic energy converters

    Science.gov (United States)

    Heinbockel, John H.; Walker, Gilbert H.

    1988-01-01

    Three-dimensional models of both conventional planar junction and vertical junction photovoltaic energy converters have been constructed. The models are a set of linear partial differential equations and take into account many photoconverter design parameters. The model is applied to Si photoconverters; however, the model may be used with other semiconductors. When used with a Nd laser, the conversion efficiency of the Si vertical junction photoconverter is 47 percent, whereas the efficiency for the conventional planar Si photoconverter is only 17 percent. A parametric study of the Si vertical junction photoconverter is then done in order to describe the optimum converter for use with the 1.06-micron Nd laser. The efficiency of this optimized vertical junction converter is 44 percent at 1 kW/sq cm.

  15. Creation of stable molecular junctions with a custom-designed scanning tunneling microscope

    International Nuclear Information System (INIS)

    Lee, Woochul; Reddy, Pramod

    2011-01-01

    The scanning tunneling microscope break junction (STMBJ) technique is a powerful approach for creating single-molecule junctions and studying electrical transport in them. However, junctions created using the STMBJ technique are usually mechanically stable for relatively short times (<1 s), impeding detailed studies of their charge transport characteristics. Here, we report a custom-designed scanning tunneling microscope that enables the creation of metal–single molecule–metal junctions that are mechanically stable for more than 1 minute at room temperature. This stability is achieved by a design that minimizes thermal drift as well as the effect of environmental perturbations. The utility of this instrument is demonstrated by performing transition voltage spectroscopy—at the single-molecule level—on Au–hexanedithiol–Au, Au–octanedithiol–Au and Au–decanedithiol–Au junctions.

  16. Superconductive junctions for x-ray spectroscopy

    International Nuclear Information System (INIS)

    Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

    1992-01-01

    Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

  17. Systematic optimization of quantum junction colloidal quantum dot solar cells

    KAUST Repository

    Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Tang, Jiang; Kramer, Illan J.; Ning, Zhijun; Sargent, Edward H.

    2012-01-01

    The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum

  18. Optical photon detection in Al superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Brammertz, G.; Peacock, A.; Verhoeve, P.; Martin, D.; Venn, R.

    2004-01-01

    We report on the successful fabrication of low leakage aluminium superconducting tunnel junctions with very homogeneous and transparent insulating barriers. The junctions were tested in an adiabatic demagnetisation refrigerator with a base temperature of 35 mK. The normal resistance of the junctions is equal to ∼7 μΩ cm 2 with leakage currents in the bias voltage domain as low as 100 fA/μm 2 . Optical single photon counting experiments show a very high responsivity with charge amplification factors in excess of 100. The total resolving power λ/Δλ (including electronic noise) for 500 nm photons is equal to 13 compared to a theoretical tunnel limited value of 34. The current devices are found to be limited spectroscopically by spatial inhomogeneities in the detectors response

  19. Temporal correlations and structural memory effects in break junction measurements

    DEFF Research Database (Denmark)

    Magyarkuti, A.; Lauritzen, Kasper Primdal; Balogh, Zoltan Imre

    2017-01-01

    that correlations between the opening and subsequent closing traces may indicate structural memory effects in atomic-sized metallic and molecular junctions. Applying these methods on measured and simulated gold metallic contacts as a test system, we show that the surface diffusion induced flattening of the broken......-molecule junctions, we demonstrate pronounced contact memory effects and recovery of the molecule for junctions breaking before atomic chains are formed. However, if chains are pulled the random relaxation of the chain and molecule after rupture prevents opening-closing correlations....

  20. Intercellular coupling mediated by potassium accumulation in peg-and-socket junctions

    DEFF Research Database (Denmark)

    Vigmond, Edward J.; Bardakjian, Berj L.; Thuneberg, Lars

    2000-01-01

    Physiology, peg-and-socket junctions, smooth muscle, boundary element method, coupling, morphology......Physiology, peg-and-socket junctions, smooth muscle, boundary element method, coupling, morphology...

  1. Josephson junction analog and quasiparticle-pair current

    DEFF Research Database (Denmark)

    Bak, Christen Kjeldahl; Pedersen, Niels Falsig

    1973-01-01

    A close analogy exists between a Josephson junction and a phase-locked loop. A new type of electrical analog based on this principle is presented. It is shown that the inclusion in this analog of a low-pass filter gives rise to a current of the same form as the Josephson quasiparticle-pair current....... A simple picture of the quasiparticle-pair current, which gives the right dependences, is obtained by assuming a junction cutoff frequency to be at the energy gap. ©1973 American Institute of Physics...

  2. Fabrication and characterization of graphene/molecule/graphene vertical junctions with aryl alkane monolayers

    Science.gov (United States)

    Jeong, Inho; Song, Hyunwook

    2017-11-01

    In this study, we fabricated and characterized graphene/molecule/graphene (GMG) vertical junctions with aryl alkane monolayers. The constituent molecules were chemically self-assembled via electrophilic diazonium reactions into a monolayer on the graphene bottom electrode, while the other end physically contacted the graphene top electrode. A full understanding of the transport properties of molecular junctions is a key step in the realization of molecular-scale electronic devices and requires detailed microscopic characterization of the junction's active region. Using a multiprobe approach combining a variety of transport techniques, we elucidated the transport mechanisms and electronic structure of the GMG junctions, including temperature- and length-variable transport measurements, and transition voltage spectroscopy. These results provide criteria to establish a valid molecular junction and to determine the most probable transport characteristics of the GMG junctions.

  3. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  4. DISCOVERY OF AN ULTRA-DIFFUSE GALAXY IN THE PISCES-PERSEUS SUPERCLUSTER

    Energy Technology Data Exchange (ETDEWEB)

    Martínez-Delgado, David; Grebel, Eva K. [Astronomisches Rechen-Institut, Zentrum für Astronomie der Universität Heidelberg, Mönchhofstr. 12–14, D-69120 Heidelberg (Germany); Läsker, Ronald [Max-Planck-Institut für Astronomie, Königstuhl 17, D-69117 Heidelberg (Germany); Sharina, Margarita; Karachentsev, Igor D. [Special Astrophysical Observatory, Russian Academy of Sciences (Russian Federation); Toloba, Elisa; Romanowsky, Aaron J. [University of California Observatories, 1156 High Street, Santa Cruz, CA 95064 (United States); Fliri, Jürgen [Instituto de Astrofísica de Canarias, Vía Láctea s/n, E-38200 La Laguna, Tenerife (Spain); Beaton, Rachael [The Observatories of the Carnegie Institutions for Science, 813 Santa Barbara Street, Pasadena, CA 91101 (United States); Valls-Gabaud, David [LERMA, CNRS UMR 8112, Observatoire de Paris, 61 Avenue de l’Observatoire, F-75014 Paris (France); Chonis, Taylor S. [Department of Astronomy, University of Texas at Austin, 2515 Speedway, Stop C1400, Austin, TX 78712 (United States); Forbes, Duncan A. [Center for Astrophysics and Supercomputing, Swinburne University, Hawthorn VIC 3122 (Australia); Gallego-Laborda, J. [Fosca Nit Observatory, Montsec Astronomical Park, Ager (Spain); Teuwen, Karel [Remote Observatories Southern Alpes, Verclause (France); Gómez-Flechoso, M. A. [Departamento de Matemática Aplicada (Biomatemática), Universidad Complutense de Madrid, E-28040 Madrid (Spain); and others

    2016-04-15

    We report the discovery of DGSAT I, an ultra-diffuse, quenched galaxy located 10.°4 in projection from the Andromeda galaxy (M31). This low-surface brightness galaxy (μ{sub V} = 24.8 mag arcsec{sup −2}), found with a small amateur telescope, appears unresolved in sub-arcsecond archival Subaru/Suprime-Cam images, and hence has been missed by optical surveys relying on resolved star counts, in spite of its relatively large effective radius (R{sub e}(V) = 12″) and proximity (15′) to the well-known dwarf spheroidal galaxy And II. Its red color (V − I = 1.0), shallow Sérsic index (n{sub V} = 0.68), and the absence of detectable Hα emission are typical properties of dwarf spheroidal galaxies and suggest that it is mainly composed of old stars. Initially interpreted as an interesting case of an isolated dwarf spheroidal galaxy in the local universe, our radial velocity measurement obtained with the BTA 6 m telescope (V{sub h} = 5450 ± 40 km s{sup −1}) shows that this system is an M31-background galaxy associated with the filament of the Pisces-Perseus supercluster. At the distance of this cluster (∼78 Mpc), DGSAT I would have an R{sub e} ∼ 4.7 kpc and M{sub V} ∼ −16.3. Its properties resemble those of the ultra-diffuse galaxies (UDGs) recently discovered in the Coma cluster. DGSAT I is the first case of these rare UDGs found in this galaxy cluster. Unlike the UDGs associated with the Coma and Virgo clusters, DGSAT I is found in a much lower density environment, which provides a fresh constraint on the formation mechanisms for this intriguing class of galaxy.

  5. Caribbean shallow water Corallimorpharia

    NARCIS (Netherlands)

    Hartog, J.C.den

    1980-01-01

    The present paper comprises a review of the Caribbean shallow water Corallimorpharia. Six species, belonging to four genera and three families are treated, including Pseudocorynactis caribbeorum gen. nov. spec. nov., a species with tentacular acrospheres containing the largest spirocysts ever

  6. Dielectric effect on electric fields in the vicinity of the metal–vacuum–dielectric junction

    International Nuclear Information System (INIS)

    Chung, M.S.; Mayer, A.; Miskovsky, N.M.; Weiss, B.L.; Cutler, P.H.

    2013-01-01

    The dielectric effect was theoretically investigated in order to describe the electric field in the vicinity of a junction of a metal, dielectric, and vacuum. The assumption of two-dimensional symmetry of the junction leads to a simple analytic form and to a systematic numerical calculation for the field. The electric field obtained for the triple junction was found to be enhanced or reduced according to a certain criterion determined by the contact angles and dielectric constant. Further numerical calculations of the dielectric effect show that an electric field can experience a larger enhancement or reduction for a quadruple junction than that achieved for the triple junction. It was also found that even though it changes slowly in comparison with the shape effect, the dielectric effect was noticeably large over the entire range of the shape change. - Highlights: ► This work explains how a very strong electric field can be produced due to the dielectric in the vicinity of metal–dielectric contact. ► This work deals with configurations which enhance electric fields using the dielectric effect. The configuration is a type of junction at which metal, vacuum and dielectric meet. ► This work suggests the criterion to determine whether field enhancement occurs or not in the triple junction of metal, vacuum and dielectric. ► This work suggests that a quadruple junction is more effective in enhancing the electric field than a triple junction. The quadruple junction is formed by an additional vacuum portion to the triple junction. ► This work suggests that a triple junction can be a breakthrough candidate for a cold electron source

  7. Single-Molecule Photocurrent at a Metal-Molecule-Semiconductor Junction.

    Science.gov (United States)

    Vezzoli, Andrea; Brooke, Richard J; Higgins, Simon J; Schwarzacher, Walther; Nichols, Richard J

    2017-11-08

    We demonstrate here a new concept for a metal-molecule-semiconductor nanodevice employing Au and GaAs contacts that acts as a photodiode. Current-voltage traces for such junctions are recorded using a STM, and the "blinking" or "I(t)" method is used to record electrical behavior at the single-molecule level in the dark and under illumination, with both low and highly doped GaAs samples and with two different types of molecular bridge: nonconjugated pentanedithiol and the more conjugated 1,4-phenylene(dimethanethiol). Junctions with highly doped GaAs show poor rectification in the dark and a low photocurrent, while junctions with low doped GaAs show particularly high rectification ratios in the dark (>10 3 for a 1.5 V bias potential) and a high photocurrent in reverse bias. In low doped GaAs, the greater thickness of the depletion layer not only reduces the reverse bias leakage current, but also increases the volume that contributes to the photocurrent, an effect amplified by the point contact geometry of the junction. Furthermore, since photogenerated holes tunnel to the metal electrode assisted by the HOMO of the molecular bridge, the choice of the latter has a strong influence on both the steady state and transient metal-molecule-semiconductor photodiode response. The control of junction current via photogenerated charge carriers adds new functionality to single-molecule nanodevices.

  8. Q factor and resonance amplitude of Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Broom, R.F.; Wolf, P.

    1977-01-01

    The surface impedance of the superconducting films comprising the electrodes of Josephson tunnel junctions has been derived from the BCS theory in the extreme London limit. Expressions have been obtained for (i) the dependence of the penetration depth lambda on frequency and temperature, and (ii) the quality factor Q of the junction cavity, attributable to surface absorption in the electrodes. The effect of thin electrodes (t 9 or approx. = lambda) is also included in the calculations. Comparison of the calculated frequency dependence of lambda with resonance measurements on Pb-alloy and all-Nb tunnel junctions yields quite good agreement, indicating that the assumptions made in the theory are reasonable. Measurements of the (current) amplitude of the resonance peaks of the junctions have been compared with the values obtained from inclusion of the calculated Q in the theory by Kulik. In common with observations on microwave cavities by other workers, we find that a small residual conductivity must be added to the real part of the BCS value. With its inclusion, good agreement is found between calculation and experiment, within the range determined by the simplifying assumptions of Kulik's theory. From the results, we believe the calculation of Q to be reasonably accurate for the materials investigated. It is shown that the resonance amplitude of Josephson junctions can be calculated directly from the material constants and a knowledge of the residual conductivity

  9. Guidance Index for Shallow Landslide Hazard Analysis

    Directory of Open Access Journals (Sweden)

    Cheila Avalon Cullen

    2016-10-01

    Full Text Available Rainfall-induced shallow landslides are one of the most frequent hazards on slanted terrains. Intense storms with high-intensity and long-duration rainfall have high potential to trigger rapidly moving soil masses due to changes in pore water pressure and seepage forces. Nevertheless, regardless of the intensity and/or duration of the rainfall, shallow landslides are influenced by antecedent soil moisture conditions. As of this day, no system exists that dynamically interrelates these two factors on large scales. This work introduces a Shallow Landslide Index (SLI as the first implementation of antecedent soil moisture conditions for the hazard analysis of shallow rainfall-induced landslides. The proposed mathematical algorithm is built using a logistic regression method that systematically learns from a comprehensive landslide inventory. Initially, root-soil moisture and rainfall measurements modeled from AMSR-E and TRMM respectively, are used as proxies to develop the index. The input dataset is randomly divided into training and verification sets using the Hold-Out method. Validation results indicate that the best-fit model predicts the highest number of cases correctly at 93.2% accuracy. Consecutively, as AMSR-E and TRMM stopped working in October 2011 and April 2015 respectively, root-soil moisture and rainfall measurements modeled by SMAP and GPM are used to develop models that calculate the SLI for 10, 7, and 3 days. The resulting models indicate a strong relationship (78.7%, 79.6%, and 76.8% respectively between the predictors and the predicted value. The results also highlight important remaining challenges such as adequate information for algorithm functionality and satellite based data reliability. Nevertheless, the experimental system can potentially be used as a dynamic indicator of the total amount of antecedent moisture and rainfall (for a given duration of time needed to trigger a shallow landslide in a susceptible area. It is

  10. Radiobiological response to ultra-short pulsed megavoltage electron beams of ultra-high pulse dose rate.

    Science.gov (United States)

    Beyreuther, Elke; Karsch, Leonhard; Laschinsky, Lydia; Leßmann, Elisabeth; Naumburger, Doreen; Oppelt, Melanie; Richter, Christian; Schürer, Michael; Woithe, Julia; Pawelke, Jörg

    2015-08-01

    In line with the long-term aim of establishing the laser-based particle acceleration for future medical application, the radiobiological consequences of the typical ultra-short pulses and ultra-high pulse dose rate can be investigated with electron delivery. The radiation source ELBE (Electron Linac for beams with high Brilliance and low Emittance) was used to mimic the quasi-continuous electron beam of a clinical linear accelerator (LINAC) for comparison with electron pulses at the ultra-high pulse dose rate of 10(10) Gy min(-1) either at the low frequency of a laser accelerator or at 13 MHz avoiding effects of prolonged dose delivery. The impact of pulse structure was analyzed by clonogenic survival assay and by the number of residual DNA double-strand breaks remaining 24 h after irradiation of two human squamous cell carcinoma lines of differing radiosensitivity. The radiation response of both cell lines was found to be independent from electron pulse structure for the two endpoints under investigation. The results reveal, that ultra-high pulse dose rates of 10(10) Gy min(-1) and the low repetition rate of laser accelerated electrons have no statistically significant influence (within the 95% confidence intervals) on the radiobiological effectiveness of megavoltage electrons.

  11. Spatially inhomogeneous barrier height in graphene/MoS2 Schottky junctions

    Science.gov (United States)

    Tomer, Dushyant; Rajput, Shivani; Li, Lian

    Graphene interfaced with a semiconductor forms a Schottky junction with rectifying properties. In this study, graphene Schottky junctions are fabricated by transferring CVD monolayer graphene on mechanically exfoliated MoS2 multilayers. The forward bias current-voltage characteristics are measured in the temperature range of 210-300 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature. Such behavior is attributed to Schottky barrier inhomogeneities possibly due to graphene ripples and ridges at the junction interface as suggested by atomic force microscopy. Assuming a Gaussian distribution of the barrier height, mean barrier of 0.97+/-0.10 eV is found for the graphene MoS2 junction. Our findings provide significant insight on the barrier height inhomogeneities in graphene/two dimensional semiconductor Schottky junctions. U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering Award No. DEFG02-07ER46228.

  12. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions.

    Science.gov (United States)

    Tomer, D; Rajput, S; Hudy, L J; Li, C H; Li, L

    2015-05-29

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current-voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions.

  13. Inhomogeneity in barrier height at graphene/Si (GaAs) Schottky junctions

    International Nuclear Information System (INIS)

    Tomer, D; Rajput, S; Hudy, L J; Li, L; Li, C H

    2015-01-01

    Graphene (Gr) interfaced with a semiconductor forms a Schottky junction with rectifying properties, however, fluctuations in the Schottky barrier height are often observed. In this work, Schottky junctions are fabricated by transferring chemical vapor deposited monolayer Gr onto n-type Si and GaAs substrates. Temperature dependence of the barrier height and ideality factor are obtained by current–voltage measurements between 215 and 350 K. An increase in the zero bias barrier height and decrease in the ideality factor are observed with increasing temperature for both junctions. Such behavior is attributed to barrier inhomogeneities that arise from interfacial disorders as revealed by scanning tunneling microscopy/spectroscopy. Assuming a Gaussian distribution of the barrier heights, mean values of 1.14 ± 0.14 eV and 0.76 ± 0.10 eV are found for Gr/Si and Gr/GaAs junctions, respectively. These findings resolve the origin of barrier height inhomogeneities in these Schottky junctions. (paper)

  14. Ultra Deep Wave Equation Imaging and Illumination

    Energy Technology Data Exchange (ETDEWEB)

    Alexander M. Popovici; Sergey Fomel; Paul Sava; Sean Crawley; Yining Li; Cristian Lupascu

    2006-09-30

    In this project we developed and tested a novel technology, designed to enhance seismic resolution and imaging of ultra-deep complex geologic structures by using state-of-the-art wave-equation depth migration and wave-equation velocity model building technology for deeper data penetration and recovery, steeper dip and ultra-deep structure imaging, accurate velocity estimation for imaging and pore pressure prediction and accurate illumination and amplitude processing for extending the AVO prediction window. Ultra-deep wave-equation imaging provides greater resolution and accuracy under complex geologic structures where energy multipathing occurs, than what can be accomplished today with standard imaging technology. The objective of the research effort was to examine the feasibility of imaging ultra-deep structures onshore and offshore, by using (1) wave-equation migration, (2) angle-gathers velocity model building, and (3) wave-equation illumination and amplitude compensation. The effort consisted of answering critical technical questions that determine the feasibility of the proposed methodology, testing the theory on synthetic data, and finally applying the technology for imaging ultra-deep real data. Some of the questions answered by this research addressed: (1) the handling of true amplitudes in the downward continuation and imaging algorithm and the preservation of the amplitude with offset or amplitude with angle information required for AVO studies, (2) the effect of several imaging conditions on amplitudes, (3) non-elastic attenuation and approaches for recovering the amplitude and frequency, (4) the effect of aperture and illumination on imaging steep dips and on discriminating the velocities in the ultra-deep structures. All these effects were incorporated in the final imaging step of a real data set acquired specifically to address ultra-deep imaging issues, with large offsets (12,500 m) and long recording time (20 s).

  15. Changes of junctions of endothelial cells in coronary sclerosis: A review

    Directory of Open Access Journals (Sweden)

    Li-Zi Zhang

    2016-03-01

    Full Text Available Atherosclerosis, the major cause of cardiovascular diseases, has been a leading contributor to morbidity and mortality in the United States and it has been on the rise globally. Endothelial cell–cell junctions are critical for vascular integrity and maintenance of vascular function. Endothelial cell junctions dysfunction is the onset step of future coronary events and coronary artery disease. Keywords: Coronary atherosclerosis, Junctions, Endothelial cells

  16. Structure modeling and mutational analysis of gap junction beta 2 ...

    African Journals Online (AJOL)

    Yomi

    2012-04-03

    Apr 3, 2012 ... Three dimensional (3 D) structure is very useful for understanding biological functions. Gap junction beta 2 (GJB2), human gene encoding for gap junction beta 2 protein is involved in ... Research in deafness became real.

  17. A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

    Science.gov (United States)

    Gasmi, Khaled

    2018-02-01

    An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

  18. Triple junction polymer solar cells for photoelectrochemical water splitting

    NARCIS (Netherlands)

    Esiner, S.; Eersel, van H.; Wienk, M.M.; Janssen, R.A.J.

    2013-01-01

    A triple junction polymer solar cell in a novel 1 + 2 type configuration provides photoelectrochemical water splitting in its maximum power point at V ˜ 1.70 V with an estimated solar to hydrogen energy conversion efficiency of 3.1%. The triple junction cell consists of a wide bandgap front cell and

  19. Variability study of Si nanowire FETs with different junction gradients

    Directory of Open Access Journals (Sweden)

    Jun-Sik Yoon

    2016-01-01

    Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

  20. Photodetectors based on junctions of two-dimensional transition metal dichalcogenides

    International Nuclear Information System (INIS)

    Wei Xia; Yan Fa-Guang; Shen Chao; Lv Quan-Shan; Wang Kai-You

    2017-01-01

    Transition metal dichalcogenides (TMDCs) have gained considerable attention because of their novel properties and great potential applications. The flakes of TMDCs not only have great light absorption from visible to near infrared, but also can be stacked together regardless of lattice mismatch like other two-dimensional (2D) materials. Along with the studies on intrinsic properties of TMDCs, the junctions based on TMDCs become more and more important in applications of photodetection. The junctions have shown many exciting possibilities to fully combine the advantages of TMDCs, other 2D materials, conventional and organic semiconductors together. Early studies have greatly enriched the application of TMDCs in photodetection. In this review, we investigate the efforts in photodetectors based on the junctions of TMDCs and analyze the properties of those photodetectors. Homojunctions based on TMDCs can be made by surface chemical doping, elemental doping and electrostatic gating. Heterojunction formed between TMDCs/2D materials, TMDCs/conventional semiconductors and TMDCs/organic semiconductor also deserve more attentions. We also compare the advantages and disadvantages of different junctions, and then give the prospects for the development of junctions based on TMDCs. (topical reviews)

  1. The Wiedemann—Franz law in a normal metal—superconductor junction

    International Nuclear Information System (INIS)

    Ghanbari R; Rashedi G

    2011-01-01

    In this paper the influence of superconducting correlations on the thermal and charge conductances in a normal metal—superconductor (NS) junction in the clean limit is studied theoretically. First we solve the quasiclassical Eilenberger equations, and using the obtained density of states we can acquire the thermal and electrical conductances for the NS junction. Then we compare the conductance in a normal region of an NS junction with that in a single layer of normal metal (N). Moreover, we study the Wiedemann—Franz (WF) law for these two cases (N and NS). From our calculations we conclude that the behaviour of the NS junction does not conform to the WF law for all temperatures. The effect of the thickness of normal metal on the thermal conductivity is also theoretically investigated in the paper. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Electrostatically Tunable Nanomechanical Shallow Arches

    KAUST Repository

    Kazmi, Syed N. R.

    2017-11-03

    We report an analytical and experimental study on the tunability of in-plane doubly-clamped nanomechanical arches under varied DC bias conditions at room temperature. For this purpose, silicon based shallow arches are fabricated using standard e-beam lithography and surface nanomachining of a highly conductive device layer on a silicon-on-insulator (SOI) wafer. The experimental results show good agreement with the analytical results with a maximum tunability of 108.14% for 180 nm thick arch with a transduction gap of 1 μm between the beam and the driving/sensing electrodes. The high tunability of shallow arches paves the ways for highly tunable band pass filtering applications in high frequency range.

  3. Ultras in Trnava: History, Activities and Ideology

    Directory of Open Access Journals (Sweden)

    Kušnierová Daniela

    2014-12-01

    Full Text Available The environment of football fans is unknown phenomenon for the rest of the public. This article offers basic view on formation and functioning of the most numerous and the most active ultras group in Slovakia, Trnava fans. First part of the text encompasses a history overview of ultras movement, as well as an overview of basic activities of ultras fans during a football match and also outside of it. The second part of this text deals with the most debated activity of football fans, which is violence during a football match.

  4. On the stability of large-area Al-p-Si junction

    International Nuclear Information System (INIS)

    Tsyganov, Yu.S.

    2006-01-01

    Design of silicon radiation detector made of 12 kΩ · cm p-silicon with both amine- and amine-free hardeners epoxy resin junction edge passivation is presented. Before producing large-area detectors for measurements of efficiency of evaporation residues collection at the focal plane of the Dubna Gas-Filled Recoil Separator (DGFRS), a set of small-area test detectors was produced. Stability of the Al-(p)Si junction has been studied for a long time. Estimate of a realistic lifetime for the mentioned type of Al-Si rectifying junction is done

  5. Dielectric properties of biological tissues in which cells are connected by communicating junctions

    International Nuclear Information System (INIS)

    Asami, Koji

    2007-01-01

    The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities P j , the low-frequency (LF) relaxation curve became broader, especially at P j of 0.2-0.5, and its intensity was proportional to P j up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues

  6. Dielectric properties of biological tissues in which cells are connected by communicating junctions

    Science.gov (United States)

    Asami, Koji

    2007-06-01

    The frequency dependence of the complex permittivity of biological tissues has been simulated using a simple model that is a cubic array of spherical cells in a parallel plate capacitor. The cells are connected by two types of communicating junctions: one is a membrane-lined channel for plasmodesmata in plant tissues, and the other is a conducting patch of adjoining plasma membranes for gap junctions in animal tissues. Both junctions provided similar effects on the dielectric properties of the tissue model. The model without junction showed a dielectric relaxation (called β-dispersion) that was expected from an interfacial polarization theory for a concentrated suspension of spherical cells. The dielectric relaxation was the same as that of the model in which neighbouring cells were connected by junctions perpendicular to the applied electric field. When neighbouring cells were connected by junctions parallel to the applied electric field or in all directions, a dielectric relaxation appeared at a lower frequency side in addition to the β-dispersion, corresponding to the so called α-dispersion. When junctions were randomly introduced at varied probabilities Pj, the low-frequency (LF) relaxation curve became broader, especially at Pj of 0.2-0.5, and its intensity was proportional to Pj up to 0.7. The intensity and the characteristic frequency of the LF relaxation both decreased with decreasing junction conductance. The simulations indicate that communicating junctions are important for understanding the LF dielectric relaxation in tissues.

  7. Computational modeling of shallow geothermal systems

    CERN Document Server

    Al-Khoury, Rafid

    2011-01-01

    A Step-by-step Guide to Developing Innovative Computational Tools for Shallow Geothermal Systems Geothermal heat is a viable source of energy and its environmental impact in terms of CO2 emissions is significantly lower than conventional fossil fuels. Shallow geothermal systems are increasingly utilized for heating and cooling of buildings and greenhouses. However, their utilization is inconsistent with the enormous amount of energy available underneath the surface of the earth. Projects of this nature are not getting the public support they deserve because of the uncertainties associated with

  8. Effect of single Abrikosov vortices on the properties of Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Golubov, A.A.; Kupriyanov, M.Yu.

    1987-01-01

    The effect of single Abrikosov vortices, trapped in the electrodes of a Josephson tunnel junction perpendicularly to the junction surface, on the tunnel current through the junction is studied within the framework of the microscopic theory. The current-voltage characteristic and the critical junction current I c are calculated for temperatures 0 c . It is shown that if the vortices at the junction are misaligned, singularities on the current-voltage characteristic appear at eV Δ (T), and in some cases the magnitude of suppression of I c may be of the order of magnitude of I c itself. The temperature dependence of the critical current is calculated for the case of one of the electrodes being a two-dimensional superconducting film in which the creation of opposite sign vortex pairs is significant

  9. Ultra-thin chip technology and applications

    CERN Document Server

    2010-01-01

    Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.

  10. dc properties of series-parallel arrays of Josephson junctions in an external magnetic field

    International Nuclear Information System (INIS)

    Lewandowski, S.J.

    1991-01-01

    A detailed dc theory of superconducting multijunction interferometers has previously been developed by several authors for the case of parallel junction arrays. The theory is now extended to cover the case of a loop containing several junctions connected in series. The problem is closely associated with high-T c superconductors and their clusters of intrinsic Josephson junctions. These materials exhibit spontaneous interferometric effects, and there is no reason to assume that the intrinsic junctions form only parallel arrays. A simple formalism of phase states is developed in order to express the superconducting phase differences across the junctions forming a series array as functions of the phase difference across the weakest junction of the system, and to relate the differences in critical currents of the junctions to gaps in the allowed ranges of their phase functions. This formalism is used to investigate the energy states of the array, which in the case of different junctions are split and separated by energy barriers of height depending on the phase gaps. Modifications of the washboard model of a single junction are shown. Next a superconducting inductive loop containing a series array of two junctions is considered, and this model is used to demonstrate the transitions between phase states and the associated instabilities. Finally, the critical current of a parallel connection of two series arrays is analyzed and shown to be a multivalued function of the externally applied magnetic flux. The instabilities caused by the presence of intrinsic serial junctions in granular high-T c materials are pointed out as a potential source of additional noise

  11. Innovative architecture design for high performance organic and hybrid multi-junction solar cells

    Science.gov (United States)

    Li, Ning; Spyropoulos, George D.; Brabec, Christoph J.

    2017-08-01

    The multi-junction concept is especially attractive for the photovoltaic (PV) research community owing to its potential to overcome the Schockley-Queisser limit of single-junction solar cells. Tremendous research interests are now focused on the development of high-performance absorbers and novel device architectures for emerging PV technologies, such as organic and perovskite PVs. It has been predicted that the multi-junction concept is able to boost the organic and perovskite PV technologies approaching the 20% and 30% benchmarks, respectively, showing a bright future of commercialization of the emerging PV technologies. In this contribution, we will demonstrate innovative architecture design for solution-processed, highly functional organic and hybrid multi-junction solar cells. A simple but elegant approach to fabricating organic and hybrid multi-junction solar cells will be introduced. By laminating single organic/hybrid solar cells together through an intermediate layer, the manufacturing cost and complexity of large-scale multi-junction solar cells can be significantly reduced. This smart approach to balancing the photocurrents as well as open circuit voltages in multi-junction solar cells will be demonstrated and discussed in detail.

  12. ODMR of shallow donors in Zn-doped LEC-grown InP

    International Nuclear Information System (INIS)

    Trombetta, J.M.; Kennedy, T.A.

    1990-01-01

    ODMR spectra observed while monitoring the shallow donor-shallow acceptor pair emission in Zn-doped LEC-grown InP display strong features in the region near the conduction electron value of g = 1.20. In addition to a previously observed narrow line, the authors observe a much broader resonance which dominates at low photoexcitation intensity. This broader line is interpreted as the unresolved exchange split resonances of electrons bound to residual shallow donors. The exchange broadening arises from interaction with nearby paramagnetic centers. Both resonances result in a decrease in the shallow-donor-to shallow-acceptor radiative recombination and give evidence for pair recombination processes which compete with this emission

  13. Memory-Based Shallow Parsing

    NARCIS (Netherlands)

    Tjong Kim Sang, E.F.

    2002-01-01

    We present memory-based learning approaches to shallow parsing and apply these to five tasks: base noun phrase identification, arbitrary base phrase recognition, clause detection, noun phrase parsing and full parsing. We use feature selection techniques and system combination methods for improving

  14. Fluctuation of heat current in Josephson junctions

    Directory of Open Access Journals (Sweden)

    P. Virtanen

    2015-02-01

    Full Text Available We discuss the statistics of heat current between two superconductors at different temperatures connected by a generic weak link. As the electronic heat in superconductors is carried by Bogoliubov quasiparticles, the heat transport fluctuations follow the Levitov–Lesovik relation. We identify the energy-dependent quasiparticle transmission probabilities and discuss the resulting probability density and fluctuation relations of the heat current. We consider multichannel junctions, and find that heat transport in diffusive junctions is unique in that its statistics is independent of the phase difference between the superconductors.

  15. Spin-filtering junctions with double ferroelectric barriers

    International Nuclear Information System (INIS)

    Yan, Ju; Ding-Yu, Xing

    2009-01-01

    An FS/FE/NS/FE/FS double tunnel junction is suggested to have the ability to inject, modulate and detect the spin-polarized current electrically in a single device, where FS is the ferromagnetic semiconductor electrode, NS is the nonmagnetic semiconductor, and FE the ferroelectric barrier. The spin polarization of the current injected into the NS region can be switched between a highly spin-polarized state and a spin unpolarized state. The high spin polarization may be detected by measuring the tunneling magnetoresistance ratio of the double tunnel junction

  16. Stretchers and compressors for ultra-high power laser systems

    Energy Technology Data Exchange (ETDEWEB)

    Yakovlev, I V [Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

    2014-05-30

    This review is concerned with pulse stretchers and compressors as key components of ultra-high power laser facilities that take advantage of chirped-pulse amplification. The potentialities, characteristics, configurations and methods for the matching and alignment of these devices are examined, with particular attention to the history of the optics of ultra-short, ultra-intense pulses before and after 1985, when the chirped-pulse amplification method was proposed, which drastically changed the view of the feasibility of creating ultra-high power laser sources. The review is intended primarily for young scientists and experts who begin to address the amplification and compression of chirped pulses, experts in laser optics and all who are interested in scientific achievements in the field of ultra-high power laser systems. (review)

  17. Roles of gap junctions, connexins and pannexins in epilepsy

    Directory of Open Access Journals (Sweden)

    Shanthini eMylvaganam

    2014-05-01

    Full Text Available Enhanced gap junctional communication (GJC between neurons is considered a major factor underlying the neuronal synchrony driving seizure activity. In addition, the hippocampal sharp wave ripple complexes, associated with learning and seizures, are diminished by GJC blocking agents. Although gap junctional blocking drugs inhibit experimental seizures, they all have other nonspecific actions. Besides interneuronal GJC between dendrites, inter-axonal and inter-glial GJC is also considered important for seizure generation. Interestingly, in most studies of cerebral tissue from animal seizure models and from human patients with epilepsy, there is up-regulation of glial, but not neuronal gap junctional mRNA and protein. Significant changes in the expression and post-translational modification of the astrocytic connexin Cx43, and Panx1 were observed in an in vitro Co++ seizure model, further supporting a role for glia in seizure-genesis, although the reasons for this remain unclear. Further suggesting an involvement of astrocytic GJC in epilepsy, is the fact that the expression of astrocytic Cx mRNAs (Cxs 30 and 43 is several fold higher than that of neuronal Cx mRNAs (Cxs 36 and 45, and the number of glial cells outnumber neuronal cells in mammalian hippocampal and cortical tissue. Pannexin expression is also increased in both animal and human epileptic tissues. Specific Cx43 mimetic peptides, Gap 27 and SLS, inhibit the docking of astrocytic connexin Cx43 proteins from forming intercellular gap junctions, diminishing spontaneous seizures. Besides GJs, Cx membrane hemichannels in glia and Panx membrane channels in neurons and glia are also inhibited by gap junctional pharmacological blockers. Although there is no doubt that connexin-based gap junctions and hemichannels, and pannexin-based membrane channels are related to epilepsy, the specific details of how they are involved and how we can modulate their function for therapeutic purposes remain to

  18. Tunnel magnetoresistance in alumina, magnesia and composite tunnel barrier magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Schebaum, Oliver; Drewello, Volker; Auge, Alexander; Reiss, Guenter; Muenzenberg, Markus; Schuhmann, Henning; Seibt, Michael; Thomas, Andy

    2011-01-01

    Using magnetron sputtering, we have prepared Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions with tunnel barriers consisting of alumina, magnesia, and magnesia-alumina bilayer systems. The highest tunnel magnetoresistance ratios we found were 73% for alumina and 323% for magnesia-based tunnel junctions. Additionally, tunnel junctions with a unified layer stack were prepared for the three different barriers. In these systems, the tunnel magnetoresistance ratios at optimum annealing temperatures were found to be 65% for alumina, 173% for magnesia, and 78% for the composite tunnel barriers. The similar tunnel magnetoresistance ratios of the tunnel junctions containing alumina provide evidence that coherent tunneling is suppressed by the alumina layer in the composite tunnel barrier. - Research highlights: → Transport properties of Co-Fe-B/tunnel barrier/Co-Fe-B magnetic tunnel junctions. → Tunnel barrier consists of MgO, Al-Ox, or MgO/Al-Ox bilayer systems. → Limitation of TMR-ratio in composite barrier tunnel junctions to Al-Ox values. → Limitation indicates that Al-Ox layer is causing incoherent tunneling.

  19. Electrical resistivity of monolayers and bilayers of alkanethiols in tunnel junction with gate electrode

    International Nuclear Information System (INIS)

    York, Roger L.; Nacionales, David; Slowinski, Krzysztof

    2005-01-01

    The tunneling resistances of monolayers and bilayers of n-alkanethiols in macroscopic Hg-Hg junctions with an electrochemical gate are reported. The resistances near zero bias calculated per 1 hydrocarbon chain vary from (5 ± 4) x 10 12 Ω for n-nonanethiol to (4 ± 2) x 10 16 Ω for n-octadecanethiol. These values indicate that monolayers of hydrocarbons in Hg-Hg junctions are substantially more resistive as compared to measurements employing microscopic tunnel junctions. The tunneling resistances of monolayer junctions are approximately 1 order of magnitude larger than those of bilayer junctions containing the same number of atoms indicating inefficient electronic coupling across the non-bonded -CH 3 |Hg interface. The symmetric current-voltage curves observed for the asymmetric junctions of Hg-S-(CH 2 ) n -CH 3 |Hg type suggest that these junctions do not behave as molecular diodes. Additional experimental evidence for the nature of the -CH 3 |Hg interface in the Hg-S-(CH 2 ) n -CH 3 |Hg junction is also presented

  20. Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

    2018-06-01

    In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.