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Sample records for ultra-long aln nanowires

  1. Ferromagnetism in Cr-doped passivated AlN nanowires

    KAUST Repository

    Kanoun, Mohammed; Goumri-Said, Souraya; Schwingenschlö gl, Udo

    2014-01-01

    We apply first principles calculations to predict the effect of Cr doping on the electronic and magnetic properties of passivated AlN nanowires. We compare the energetics of the possible dopant sites and demonstrate the favorable configuration ferromagnetic ordering. The charge density of the pristine passivated AlN nanowires is used to elucidate the bonding character. Spin density maps demonstrate an induced spin polarization for N atoms next to dopant atoms, though most of the magnetism is carried by the Cr atoms. Cr-doped AlN nanowires turn out to be interesting for spintronic devices. © 2014 the Partner Organisations.

  2. Synthesis of vertical arrays of ultra long ZnO nanowires on noncrystalline substrates

    International Nuclear Information System (INIS)

    Kwon, Bong Jun; Lee, Kyung Moon; Shin, Hae-Young; Kim, Jinwoong; Liu, Jinzhang; Yoon, Seokhyun; Lee, Soonil; Ahn, Y.H.; Park, Ji-Yong

    2012-01-01

    Highlights: ► Arrays of vertical ultra-long ZnO nanowires with lengths upto 300 μm. ► Controls of lengths and diameters of vertical arrays of ZnO nanowires on SiO 2 substrates. ► Luminescent and electrical properties of ZnO nanowires prepared with different growth conditions. - Abstract: Vertically aligned arrays of ultralong ZnO nanowires were synthesized on SiO 2 substrates with carbothermal vapor phase transport method with Au seeding layer. High density of vertically aligned ZnO nanowires with lengths from a few to ∼300 μm could be grown by controlling growth conditions. Supply of high concentration of Zn vapor and control of the ratio between Zn vapor and oxygen are found to have the most significant effects on the growth of long ZnO nanowires in the vapor–solid growth mechanism. The nanowires are of high crystalline quality as confirmed by various structural, compositional, and luminescent measurements. Luminescent and electrical properties of ZnO nanowires with different growth conditions were also investigated.

  3. Synthesis, characterizations and antimicrobial activities of well dispersed ultra-long CdO nanowires

    Directory of Open Access Journals (Sweden)

    Sumeet Kumar

    2013-05-01

    Full Text Available We present a simple, efficient, low cost and template free method for preparation of well dispersed ultra-long (1 μm CdO nanowires. The CdO nanowires were characterized by x-ray diffraction (XRD, Transmission electron microscopy (TEM, UV-visible spectroscopy and Raman measurements. The direct and indirect band gaps were calculated to be 3.5 eV and 2.6 eV, respectively. In the Raman spectra only second order features were observed. The CdO nanowires were used to study antimicrobial activities against B.subtilis and E.coli microbes. It shows antimicrobial activity against B.subtilis and E.coli. However, the antimicrobial activities are better against B.subtilis than that of E.coli.

  4. High-performance UV detector made of ultra-long ZnO bridging nanowires

    International Nuclear Information System (INIS)

    Li Yanbo; Della Valle, Florent; Simonnet, Mathieu; Yamada, Ichiro; Delaunay, Jean-Jacques

    2009-01-01

    A nanowatt UV photoconductive detector made up of ultra-long (∼100 μm) ZnO bridging nanowires has been fabricated by a single-step chemical vapor deposition (CVD) process. The electrodes, forming comb-shaped thick ZnO layers, and the sensing elements, consisting of ZnO nanowires bridging the electrodes, were fabricated simultaneously in a single-step CVD process. The device showed drastic changes (10-10 5 times) in current under a wide range of UV irradiances (10 -8 -10 -2 W cm -2 ). Moreover, the detector exhibited fast response (rise and decay times of the order of 1 s) to UV illumination in air, but no response to visible light (hν<3.2 eV). Our approach provides a simple and cost-effective way to fabricate high-performance 'visible-blind' UV detectors.

  5. Towards an elastic model of wurtzite AlN nanowires

    International Nuclear Information System (INIS)

    Mitrushchenkov, A; Chambaud, G; Yvonnet, J; He, Q-C

    2010-01-01

    Starting with ab initio calculations of AlN wurtzite [0001] nanowires with diameters up to 4 nm, a finite element method is developed to deal with larger nanostructures/nanoparticles. The ab initio calculations show that the structure of the nanowires can be well represented by an internal part with AlN bulk elastic properties, and one atomic surface layer with its own elastic behavior. The proposed finite element method includes surface elements with their own elastic properties using surface elastic coefficients deduced from the ab initio calculations. The elastic properties obtained with the finite element model compare very well with those obtained with the full ab initio calculations.

  6. Simple synthesis of ultra-long Ag2Te nanowires through solvothermal co-reduction method

    International Nuclear Information System (INIS)

    Xiao Feng; Chen Gang; Wang Qun; Wang Lin; Pei Jian; Zhou Nan

    2010-01-01

    Ultra-long single crystal β-Ag 2 Te nanowires with the diameter of about 300 nm were fabricated through a solvothermal route in ethylene glycol (EG) system without any template. The long single crystal wires were curves, with high purity, well-crystallized, and dislocation-free and characterized by using X-ray powder diffraction (XRD), Differential scanning calorimetry (DSC) analysis, X-ray photoelectron spectroscope (XPS), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and high-resolution transmission microscopy (HRTEM). The detailed topotactic transformation process from particles into single crystal wires was studied. Furthermore, the electrical conductivity and Seebeck coefficient have been systematically studied between 300 and 600 K. - Graphical abstract: Ultra-long single crystal β-Ag 2 Te nanowires with the diameter of about 300 nm were fabricated by the solvothermal route in ethylene glycol (EG) system without any template. The diagram displays the variation of the phases and morphologies of products with different reaction time.

  7. Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

    International Nuclear Information System (INIS)

    Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

    2008-01-01

    Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

  8. Synthesis and properties of ultra-long InP nanowires on glass.

    Science.gov (United States)

    Dhaka, Veer; Pale, Ville; Khayrudinov, Vladislav; Kakko, Joona-Pekko; Haggren, Tuomas; Jiang, Hua; Kauppinen, Esko; Lipsanen, Harri

    2016-12-16

    We report on the synthesis of Au-catalyzed InP nanowires (NWs) on low-cost glass substrates. Ultra-dense and ultra-long (up to ∼250 μm) InP NWs, with an exceptionally high growth rate of ∼25 μm min -1 , were grown directly on glass using metal organic vapor phase epitaxy (MOVPE). Structural properties of InP NWs grown on glass were similar to the ones grown typically on Si substrates showing many structural twin faults but the NWs on glass always exhibited a stronger photoluminescence (PL) intensity at room temperature. The PL measurements of NWs grown on glass reveal two additional prominent impurity related emission peaks at low temperature (10 K). In particular, the strongest unusual emission peak with an activation energy of 23.8 ± 2 meV was observed at 928 nm. Different possibilities including the role of native defects (phosphorus and/or indium vacancies) are discussed but most likely the origin of this PL peak is related to the impurity incorporation from the glass substrate. Furthermore, despite the presence of suspected impurities, the NWs on glass show outstanding light absorption in a wide spectral range (60%-95% for λ = 300-1600 nm). The optical properties and the NW growth mechanism on glass is discussed qualitatively. We attribute the exceptionally high growth rate mostly to the atmospheric pressure growth conditions of our MOVPE reactor and stronger PL intensity on glass due to the impurity doping. Overall, the III-V NWs grown on glass are similar to the ones grown on semiconductor substrates but offer additional advantages such as low-cost and light transparency.

  9. Ultra-long Fe nanowires by pulsed electrodeposition with full filling of alumina templates

    International Nuclear Information System (INIS)

    Azevedo, J; Sousa, C T; Ventura, J; Apolinario, A; Araujo, J P; Mendes, A

    2014-01-01

    With the increasing demand for high quality methods for the fast fabrication of extremely high aspect ratio nanoparticles, the research for efficient, low-cost and simple techniques has become fundamental. A promising approach on the synthesis of these materials is here addressed. Pulsed electrodeposition in porous anodic alumina templates was improved enabling, for the first time, a simple and cost effective fabrication method for vertically aligned nanomaterials with aspect ratios never reported with this method. Iron nanowires were electrodeposited and the effect of electrolyte molar concentration, temperature and stirring, pulse shape and barrier layer thickness on the deposition quality was investigated to potentially increase the template filling and the nanowires length. The electrodeposition temperature and current density were also found to be determinant parameters affecting NWs crystallography. A methodology of surface response design of experiment was conducted to retrieve the optimum values for the deposition parameters. With the determined optimized process, we were able to obtain filling ratios up to 93% and aspect ratios over 10 times higher than previous reports for an alternating current method. The high deposition homogeneity combined with the simplicity of the pulsed deposition method, can open new opportunities for the nanofabrication of nanowires. (paper)

  10. Emerging methanol-tolerant AlN nanowire oxygen reduction electrocatalyst for alkaline direct methanol fuel cell.

    Science.gov (United States)

    Lei, M; Wang, J; Li, J R; Wang, Y G; Tang, H L; Wang, W J

    2014-08-11

    Replacing precious and nondurable Pt catalysts with cheap materials is a key issue for commercialization of fuel cells. In the case of oxygen reduction reaction (ORR) catalysts for direct methanol fuel cell (DMFC), the methanol tolerance is also an important concern. Here, we develop AlN nanowires with diameters of about 100-150 nm and the length up to 1 mm through crystal growth method. We find it is electrochemically stable in methanol-contained alkaline electrolyte. This novel material exhibits pronounced electrocatalytic activity with exchange current density of about 6.52 × 10(-8) A/cm(2). The single cell assembled with AlN nanowire cathodic electrode achieves a power density of 18.9 mW cm(-2). After being maintained at 100 mA cm(-2) for 48 h, the AlN nanowire-based single cell keeps 92.1% of the initial performance, which is in comparison with 54.5% for that assembled with Pt/C cathode. This discovery reveals a new type of metal nitride ORR catalyst that can be cheaply produced from crystal growth method.

  11. Rapid synthesis of ultra-long silver nanowires for tailor-made transparent conductive electrodes: proof of concept in organic solar cells

    Science.gov (United States)

    José Andrés, Luis; Menéndez, María Fe; Gómez, David; Martínez, Ana Luisa; Bristow, Noel; Kettle, Jeffrey Paul; Menéndez, Armando; Ruiz, Bernardino

    2015-07-01

    Rapid synthesis of ultralong silver nanowires (AgNWs) has been obtained using a one-pot polyol-mediated synthetic procedure. The AgNWs have been prepared from the base materials in less than one hour with nanowire lengths reaching 195 μm, which represents the quickest synthesis and one of the highest reported aspect ratios to date. These results have been achieved through a joint analysis of all reaction parameters, which represents a clear progress beyond the state of the art. Dispersions of the AgNWs have been used to prepare thin, flexible, transparent and conducting films using spray coating. Due to the higher aspect ratio, an improved electrical percolation network is observed. This allows a low sheet resistance (RS = 20.2 Ω/sq), whilst maintaining high optical film transparency (T = 94.7%), driving to the highest reported figure-of-merit (FoM = 338). Owing to the light-scattering influence of the AgNWs, the density of the AgNW network can also be varied to enable controllability of the optical haze through the sample. Based on the identification of the optimal haze value, organic photovoltaics (OPVs) have been fabricated using the AgNWs as the transparent electrode and have been benchmarked against indium tin oxide (ITO) electrodes. Overall, the performance of OPVs made using AgNWs sees a small decrease in power conversion efficiency (PCE), primarily due to a fall in open-circuit voltage (50 mV). This work indicates that AgNWs can provide a low cost, rapid and roll-to-roll compatible alternative to ITO in OPVs, with only a small compromise in PCE needed.

  12. Rapid synthesis of ultra-long silver nanowires for tailor-made transparent conductive electrodes: proof of concept in organic solar cells

    International Nuclear Information System (INIS)

    José Andrés, Luis; Fe Menéndez, María; Gómez, David; Luisa Martínez, Ana; Menéndez, Armando; Bristow, Noel; Paul Kettle, Jeffrey; Ruiz, Bernardino

    2015-01-01

    Rapid synthesis of ultralong silver nanowires (AgNWs) has been obtained using a one-pot polyol-mediated synthetic procedure. The AgNWs have been prepared from the base materials in less than one hour with nanowire lengths reaching 195 μm, which represents the quickest synthesis and one of the highest reported aspect ratios to date. These results have been achieved through a joint analysis of all reaction parameters, which represents a clear progress beyond the state of the art. Dispersions of the AgNWs have been used to prepare thin, flexible, transparent and conducting films using spray coating. Due to the higher aspect ratio, an improved electrical percolation network is observed. This allows a low sheet resistance (R_S = 20.2 Ω/sq), whilst maintaining high optical film transparency (T = 94.7%), driving to the highest reported figure-of-merit (FoM = 338). Owing to the light-scattering influence of the AgNWs, the density of the AgNW network can also be varied to enable controllability of the optical haze through the sample. Based on the identification of the optimal haze value, organic photovoltaics (OPVs) have been fabricated using the AgNWs as the transparent electrode and have been benchmarked against indium tin oxide (ITO) electrodes. Overall, the performance of OPVs made using AgNWs sees a small decrease in power conversion efficiency (PCE), primarily due to a fall in open-circuit voltage (50 mV). This work indicates that AgNWs can provide a low cost, rapid and roll-to-roll compatible alternative to ITO in OPVs, with only a small compromise in PCE needed. (paper)

  13. Effects of external surface charges on the enhanced piezoelectric potential of ZnO and AlN nanowires and nanotubes

    Directory of Open Access Journals (Sweden)

    Seong Min Kim

    2012-12-01

    Full Text Available We theoretically investigate external surface charge effects on piezoelectric potential of ZnO and AlN nanowires (NWs and nanotubes (NTs under uniform compression. The free carrier depletion caused by negative surface charges via surface functionalization on vertically compressed ZnO and AlN NWs/NTs is simulated using finite element calculation; this indicates the enhancement of piezoelectric potential is due to the free carriers (electrons being fully depleted at the critical surface charge density. Numerical simulations reveal that full coverage of surface charges surrounding the NTs increases the piezoelectric output potential exponentially within a relatively smaller range of charge density compared to the case of NWs for a typical donor concentration (∼1017 cm−3. The model can be used to design functional high-power semiconducting piezoelectric nanogenerators.

  14. LMFBR Ultra Long Life Cores

    International Nuclear Information System (INIS)

    Schmidt, J.E.; Doncals, R.A.; Porter, C.A.; Gundy, L.M.

    1986-01-01

    The Ultra Long Life Core is an attractive and innovative design approach with several extremely beneficial attributes. Long Life cores are applicable to the full range of LMR plant sizes resulting in lifetimes up to 30 years. Core life is somewhat limited for smaller plant sizes, however significant benefits of this approach still exist for all plant sizes. The union of long life cores and the complementary inherent safety technology offer a means of utilizing the well-proven oxide fuel in a system with unsurpassed safety capability. A further benefit is that the uranium fuel cycle can be used in long life cores, especially for initial LMR plant deployment, thereby eliminating the need for reprocessing prior to starting LMR plant construction in the U.S. Finally the long life core significantly reduces power costs. With inherent safety capability designed into an LMR and with the ULLC fuel cycle, power costs competitive with light water plants are achievable while offering improved operational flexibility derived through extending refueling intervals

  15. Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

    Science.gov (United States)

    Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Yang, Fan; McComb, David W.; Myers, Roberto C.

    2015-01-01

    We report a systematic study of p-type polarization-induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7%Al/nm to 4.95%Al/nm corresponding to negative bound polarization charge densities of 2.2 × 1018 cm-3 to 1.6 × 1019 cm-3. Capacitance measurements and energy band modeling reveal that for gradients greater than or equal to 1.30%Al/nm, the deep donor concentration is negligible and free hole concentrations roughly equal to the bound polarization charge density are achieved up to 1.6 × 1019 cm-3 at a gradient of 4.95%Al/nm. Accurate grading lengths in the p- and n-side of the pn-junction are extracted from scanning transmission electron microscopy images and are used to support energy band calculation and capacitance modeling. These results demonstrate the robust nature of p-type polarization doping in nanowires and put an upper bound on the magnitude of deep donor compensation.

  16. Potential of AlN nanostructures as hydrogen storage materials.

    Science.gov (United States)

    Wang, Qian; Sun, Qiang; Jena, Puru; Kawazoe, Yoshiyuki

    2009-03-24

    The capability of AlN nanostructures (nanocages, nanocones, nanotubes, and nanowires) to store hydrogen has been studied using gradient-corrected density functional theory. In contrast to bulk AlN, which has the wurtzite structure and four-fold coordination, the Al sites in AlN nanostructures are unsaturated and have two- and three-fold coordination. Each Al atom is capable of binding one H(2) molecule in quasi-molecular form, leading to 4.7 wt % hydrogen, irrespective of the topology of the nanostructures. With the exception of AlN nanotubes, energetics does not support the adsorption of additional hydrogen. The binding energies of hydrogen to these unsaturated metal sites lie in the range of 0.1-0.2 eV/H(2) and are ideal for applications under ambient thermodynamic conditions. Furthermore, these materials do not suffer from the clustering problem that often plagues metal-coated carbon nanostructures.

  17. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  18. ARE ULTRA-LONG GAMMA-RAY BURSTS DIFFERENT?

    Energy Technology Data Exchange (ETDEWEB)

    Boër, M.; Gendre, B. [CNRS-ARTEMIS, Boulevard de l' Observatoire, CS 34229, 06304 Nice Cedex 4 (France); Stratta, G., E-mail: michel.boer@unice.fr [Università degli Studi di Urbino Carlo Bo, I-61029 Urbino (Italy)

    2015-02-10

    The discovery of a number of gamma-ray bursts (GRBs) with duration exceeding 1000 s has opened the debate on whether these bursts form a new class of sources, the so-called ultra-long GRBs, or if they are rather the tail of the distribution of the standard long GRB duration. Using the long GRB sample detected by Swift, we investigate the statistical properties of long GRBs and compare them with the ultra-long burst properties. We compute the burst duration of long GRBs using the start epoch of the so-called ''steep decay'' phase detected with Swift/XRT. We discuss also the differences observed in their spectral properties. We find that ultra-long GRBs are statistically different from the standard long GRBs with typical burst duration less than 100-500 s, for which a Wolf-Rayet star progenitor is usually invoked. Together with the presence of a thermal emission component we interpret this result as indication that the usual long GRB progenitor scenario cannot explain the extreme duration of ultra-long GRBs, their energetics, as well as the mass reservoir and size that can feed the central engine for such a long time.

  19. Fabrication et applications des reseaux de Bragg ultra-longs

    Science.gov (United States)

    Gagne, Mathieu

    This thesis presents the principal accomplishments realized during the PhD project. The thesis is presented by publication format and is a collection of four published articles having fiber Bragg gratings as a central theme. First achieved in 1978, UV writing of fiber Bragg gratings is nowadays a common and mature technology being present in both industry and academia. The property of reflecting light guided by optical fibers lead to diverse applications in telecommunication, lasers as well as several types of sensors. The conventional fabrication technique is generally based on the use of generally expensive phase masks which determine the obtained characteristics of the fiber Bragg grating. The fiber being photosensitive at those wavelengths, a periodic pattern can be written into it. The maximal length, the period, the chirp, the index contrast and the apodisation are all characteristics that depend on the phase mask. The first objective of the research project is to be able to go beyond this strong dependance on the phase mask without deteriorating grating quality. This is what really sets apart the technique presented in this thesis from other long fiber Bragg grating fabrication techniques available in the literature. The fundamental approach to obtain ultra long fiber Bragg gratings of arbitrary profile is to replace the scheme of scanning a UV beam across a phase mask to expose a fixed fiber by a scheme where the UV beam and phase mask are fixed and where the fiber is moving instead. To obtain a periodic index variation, the interference pattern itself must be synchronized with the moving fiber. Two variations of this scheme were implanted: the first one using electro-optical phase modulator placed in each arm of a Talbot interferometer and the second one using a phase mask mounted on a piezo electric actuator. A new scheme that imparts fine movements of the interferometer is also implemented for the first time and showed to be essential to achieve high

  20. Ultra-Long-Distance Hybrid BOTDA/Ф-OTDR

    Directory of Open Access Journals (Sweden)

    Yun Fu

    2018-03-01

    Full Text Available In the distributed optical fiber sensing (DOFS domain, simultaneous measurement of vibration and temperature/strain based on Rayleigh scattering and Brillouin scattering in fiber could have wide applications. However, there are certain challenges for the case of ultra-long sensing range, including the interplay of different scattering mechanisms, the interaction of two types of sensing signals, and the competition of pump power. In this paper, a hybrid DOFS system, which can simultaneously measure temperature/strain and vibration over 150 km, is elaborately designed via integrating the Brillouin optical time-domain analyzer (BOTDA and phase-sensitive optical time-domain reflectometry (Ф-OTDR. Distributed Raman and Brillouin amplifications, frequency division multiplexing (FDM, wavelength division multiplexing (WDM, and time division multiplexing (TDM are delicately fused to accommodate ultra-long-distance BOTDA and Ф-OTDR. Consequently, the sensing range of the hybrid system is 150.62 km, and the spatial resolution of BOTDA and Ф-OTDR are 9 m and 30 m, respectively. The measurement uncertainty of the BOTDA is ± 0.82 MHz. To the best of our knowledge, this is the first time that such hybrid DOFS is realized with a hundred-kilometer length scale.

  1. Direct growth of ultra-long platinum nanolawns on a semiconductor photocatalyst

    Directory of Open Access Journals (Sweden)

    Chen In-Gann

    2011-01-01

    Full Text Available Abstract A template- and surfactant-free process, thermally assisted photoreduction, is developed to prepare vertically grown ultra-long Pt nanowires (NWs (about 30-40 nm in diameter, 5-6 μm in length, and up to 80 NWs/100 μm2 in the wire density on TiO2 coated substrates, including Si wafers and carbon fibers, with the assistance of the photocatalytic ability and semiconductor characteristics of TiO2. A remarkable aspect ratio of up to 200 can be achieved. TEM analytical results suggest that the Pt NWs are single-crystalline with a preferred 〈111〉 growth direction. The precursor adopted and the heat treatment conditions are crucial for the yield of NWs. The photoelectrons supplied by TiO2 gives rise to the formation of nano-sized Pt nuclei from salt melt or solution. The subsequent growth of NWs is supported by the thermal electrons which also generated from TiO2 during the post thermal treatment. The interactions between the ions and the electrons in the Pt/TiO2 junction are discussed in this study.

  2. Physics design of an ultra-long pulsed tokamak reactor

    International Nuclear Information System (INIS)

    Ogawa, Y.; Inoue, N.; Wang, J.; Yamamoto, T.; Okano, K.

    1993-01-01

    A pulsed tokamak reactor driven only by inductive current drive has recently revived, because the non-inductive current drive efficiency seems to be too low to realize a steady-state tokamak reactor with sufficiently high energy gain Q. Essential problems in pulsed operation mode is considered to be material fatigue due to cyclic operation and expensive energy storage system to keep continuous electric output during a dwell time. To overcome these problems, we have proposed an ultra-long pulsed tokamak reactor called IDLT (abbr. Inductively operated Day-Long Tokamak), which has the major and minor radii of 10 m and 1.87 m, respectively, sufficiently to ensure the burning period of about ten hours. Here we discuss physical features of inductively operated tokamak plasmas, employing the similar constraints with ITER CDA design for engineering issues. (author) 9 refs., 2 figs., 1 tab

  3. Detection of multiple tumor markers using ultra-long carbon nanotube devices

    Science.gov (United States)

    So, Hye-Mi; Park, Dong-Won; Kim, Beom Soo; Kong, Ki-Jeong; Buh, Gyoung-Ho; Chang, Hyunju; Lee, Jeong-O.; Kong, Jing

    2008-03-01

    For the simultaneous detection of multiple tumor markers, we have fabricated ultra-long carbon nanotube sensors that can detect carcinoembryonic antigen (CEA) and prostate specific antigen (PSA), simultaneously. Ultra-long carbon nanotubes, several millimeters long, were grown by ethanol CVD, and fabricated as FET sensors by using conventional photolithography. To functionalize each segment of a single ultra-long nanotube device with multiple-tumor markers, we first functionalize the entire device with CDI-Tween 20 linking molecules, and then immobilized CEA and PSA antibodies using the microfluidic channel. The electrical conductance from CEA-antibody functionalized and PSA-antibody functionalized segment of a ultra-long carbon nanotube device was monitored simultaneously with Ag/AgCl reference electrode as a liquid gate. We will discuss the advantages of long-nanotube device in detail.

  4. Swift Ultra Long Endurance (SULE) Unmanned Air Vehicle (UAV), Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Swift proposes to design, fabricate, and fly a Swift Ultra Long Endurance (SULE) 30-day mission HALE UAS with flight tests including: 24-hrs, 48-hrs, and 7-days...

  5. Manganese oxide nanowires, films, and membranes and methods of making

    Science.gov (United States)

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  6. Feasibility study of ultra-long life fast reactor core concept - 028

    International Nuclear Information System (INIS)

    Kim, T.K.; Taiwo, T.A.

    2010-01-01

    An ultra-long life core concept is proposed targeting capital and operational cost reductions and ultra-high discharge burnup in a fast reactor system. The core concept is achieved by de-rating the power density and adopting annular core geometry to maintain criticality for more than 40 years without refueling. The ultra-long life core has a specific power of ∼10 MW/t and an average driver fuel discharge burnup of ∼300 GWd/t. It is assumed such ultra-high burnup fuel can be developed within an advanced fuel cycle program. Several benefits are expected from the ultra-long life core concept such as capital and operational cost reductions, low proliferation risk, and effectively holding LWR spent fuel without disposal until technologies for a closed nuclear fuel cycle are developed and deployed. As future work, safety analysis, development of the advanced core cooling methods, and comparative cost analysis are expected. (authors)

  7. Synthesis of ultra-long cadmium telluride nanotubes via combinational chemical transformation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Kee-Ryung; Cho, Hong-Baek; Choa, Yong-Ho, E-mail: choa15@hanyang.ac.kr

    2017-03-01

    Synthesis of high-throughput cadmium telluride (CdTe) nanotubes with an ultra-long aspect ratio is presented via a combination process concept combined with electrospinning, electrodeposition, and cationic exchange reaction. Ultra-long sacrificial silver (Ag) nanofibers were synthesized by electrospinning involving two-step calcination, and were then electrodeposited to create silver telluride nanotubes. These nanotubes underwent cationic exchange reaction in cadmium nitrate tetrahydrate solution with the aid of a ligand, tributylphosphine (TBP). Analysis showed that ultra-long pure zinc blende CdTe nanotubes were obtained with controlled dimension and uniform morphology. The thermodynamic driving force induced by the coordination of methanol solvent and TBP attributed to overcome the kinetic barrier between Ag{sub 2}Te and CdTe nanotubes, facilitating the synthesis of CdTe nanotubes. This synthetic process involving a topotactic reaction route paves a way for high-throughput extended synthesis of new chalcogenide hollow nanotubes for application in photodetectors and solar cells. - Highlights: • High throughput synthetic route of hollow CdTe nanotubes with ultra-long aspect ratio. • Chemical combination of electrospinning, electrodeposition & cation exchange reaction. • Pure zinc blende CdTe by controlled dimension & structural variation of Ag nanofibers. • Potential for the high throughput synthesis of new exotic chalcogenide nanotubes.

  8. The extraordinary role of the AlN interlayer in growth of AlN sputtered on Ti electrodes

    NARCIS (Netherlands)

    Tran, Tuan; Pandraud, G.; Tichelaar, F.D.; Nguyen, Duc Minh; Schellevis, H.; Sarro, P.M.

    2013-01-01

    The structure of AlN layers grown on Ti with and without an AlN interlayer between the Si substrate and the Ti layer is investigated. The AlN grains take over the orientation of the Ti columnar grains in both cases. Surprisingly, the Ti grains do not take over completely the orientations of the AlN

  9. Heat transfer nanofluid based on curly ultra-long multi-wall carbon nanotubes

    Science.gov (United States)

    Boncel, Sławomir; Zniszczoł, Aurelia; Pawlyta, Mirosława; Labisz, Krzysztof; Dzido, Grzegorz

    2018-02-01

    The main challenge in the use of multi-wall carbon nanotube (MWCNT) as key components of nanofluids is to transfer excellent thermal properties from individual nanotubes into the bulk systems. We present studies on the performance of heat transfer nanofluids based on ultra-long ( 2 mm), curly MWCNTs - in the background of various other nanoC-sp2, i.e. oxidized MWCNTs, commercially available Nanocyl™ MWCNTs and spherical carbon nanoparticles (SCNs). The nanofluids prepared via ultrasonication from water and propylene glycol were studied in terms of heat conductivity and heat transfer in a scaled up thermal circuit containing a copper helical heat exchanger. Ultra-long curly MWCNT (1 wt.%) nanofluids (stabilized with Gum Arabic in water) emerged as the most thermally conducting ones with a 23-30%- and 39%-enhancement as compared to the base-fluids for water and propylene glycol, respectively. For turbulent flows ( Re = 8000-11,000), the increase of heat transfer coefficient for the over-months stable 1 wt.% ultra-long MWCNT nanofluid was found as high as >100%. The findings allow to confirm that longer MWCNTs are promising solid components in nanofluids and hence to predict their broader application in heat transfer media.

  10. Low-Weight, Durable, and Low-Cost Metal Rubber Sensor System for Ultra Long Duration Scientific Balloons, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — NanoSonic proposes to develop an innovative, low-cost, ultra low mass density, and non-intrusive sensor system for ultra long duration balloons (ULDB) that will...

  11. Novel Ultralow-Weight Metal Rubber Sensor System for Ultra Long-Duration Scientific Balloons, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — NanoSonic proposes to develop an innovative, ultralow mass density, and non-intrusive sensor system for ultra long duration balloons that will operate in the most...

  12. Ultra Long-Life Spacecraft for Long Duration Space Exploration Missions

    Science.gov (United States)

    Chau, Savio

    2002-01-01

    After decades of Solar System exploration, NASA has almost completed the initial reconnaissance, and has been planning for landing and sample return missions on many planets, satellites, comets, and asteroids. The next logical step of space exploration is to expand the frontier into other missions within and outside the solar system. These missions can easily last for more than 30 to 50 years. Most of the current technologies and spacecraft design techniques are not adequate to support such long life missions. Many breakthrough technologies and non-conventional system architecture have to develop in order to sustain such long life missions.Some of these technologies are being developed by the NASA Exploration Team (neXt). Based on the projected requirements for ultra long life missions, the costs and benefits of the required technologies can be quantified. The ultra long-life space system should have four attributes: long-term survivability, administration of consumable resources, evolvability and adaptability, and low-cost long-term operations of the spacecraft. The discussion of survivability is the focus of this paper. Conventional fault tolerant system design has to tolerate only random failures, which can be handled effectively by dual or triple redundancy for a relatively short time. In contrast, the predominant failure mode in an ultra long-life system is the wear-out of components. All active components in the system are destined to fail before the end of the mission. Therefore, an ultra long-life system would require a large number of redundant components. This would be impractical in conventional fault tolerant systems because their fault tolerance techniques are very inefficient. For instance, a conventional dual-string avionics system duplicates the all the components including the processor, memory, and I/O controllers on a spacecraft. However, when the same component in both strings fail (e.g., the processor), the system will fail although all other

  13. A Preliminary Design Study of Ultra-Long-Life SFR Cores having Heterogeneous Fuel Assemblies

    Energy Technology Data Exchange (ETDEWEB)

    Jung, GeonHee; You, WuSeung; Hong, Ser Gi [Kyung Hee University, Yongin (Korea, Republic of)

    2016-10-15

    The PWR and CANDU reactors have provided electricity for several decades in our country but they have produced lots of spent fuels and so the safe and efficient disposal of these spent fuels is one of the main issues in nuclear industry. This type ultra-long-life cores are quite efficient in terms of the amount of spent fuel generation per electricity production and they can be used as an interim storage for PWR or CANDU spent fuel over several tens of years if they use the PWR or CANDU spent fuel as the initial fuel. Typically, the previous works have considered radially homogeneous fuel assemblies in which only blanket or driver fuel rods are employed and they considered axially or radially heterogeneous core configurations with the radially homogeneous fuel assemblies. These core configurations result in the propagation of the power distribution which can lead to the significant temperature changes for each fuel assembly over the time. In this work, the radially heterogeneous fuel assemblies are employed in new ultra-long-life SFR (Sodium-cooled Fast Reactor) cores to minimize the propagation of power distribution by allowing the power propagation in the fuel assemblies. In this work, new small ultra-long life SFR cores were designed with heterogeneous fuel assemblies having both blanket and driver fuel rods to minimize the propagation of power distribution over the core by allowing power propagation from driver rods to blanket rods in fuel assemblies. In particular, high fidelity depletion calculation coupled with heterogeneous Monte Carlo neutron transport calculation was performed to assess the neutronic feasibility of the ultralong life cores. The results of the analysis showed that the candidate core has the cycle length of 77 EFPYs, a small burnup reactivity swing of 1590 pcm and acceptably small SVRs both at BOC and EOC.

  14. Superconducting NbN single-photon detectors on GaAs with an AlN buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Ekkehart; Merker, Michael; Ilin, Konstantin; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie, Hertzstrasse 16, 76187 Karlsruhe (Germany)

    2015-07-01

    GaAs is the material of choice for photonic integrated circuits. It allows the monolithic integration of single-photon sources like quantum dots, waveguide based optical circuits and detectors like superconducting nanowire single-photon detectors (SNSPDs) onto one chip. The growth of high quality NbN films on GaAs is challenging, due to natural occurring surface oxides and the large lattice mismatch of about 27%. In this work, we try to overcome these problems by the introduction of a 10 nm AlN buffer layer. Due to the buffer layer, the critical temperature of 6 nm thick NbN films was increased by about 1.5 K. Furthermore, the critical current density at 4.2 K of NbN flim deposited onto GaAs with AlN buffer is 50% higher than of NbN film deposited directly onto GaAs substrate. We successfully fabricated NbN SNSPDs on GaAs with a AlN buffer layer. SNSPDs were patterned using electron-beam lithography and reactive-ion etching techniques. Results on the study of detection efficiency and jitter of a NbN SNSPD on GaAs, with and without AlN buffer layer will be presented and discussed.

  15. Hierarchical carbon nanostructure design: ultra-long carbon nanofibers decorated with carbon nanotubes

    International Nuclear Information System (INIS)

    El Mel, A A; Achour, A; Gautron, E; Angleraud, B; Granier, A; Le Brizoual, L; Djouadi, M A; Tessier, P Y; Xu, W; Choi, C H

    2011-01-01

    Hierarchical carbon nanostructures based on ultra-long carbon nanofibers (CNF) decorated with carbon nanotubes (CNT) have been prepared using plasma processes. The nickel/carbon composite nanofibers, used as a support for the growth of CNT, were deposited on nanopatterned silicon substrate by a hybrid plasma process, combining magnetron sputtering and plasma-enhanced chemical vapor deposition (PECVD). Transmission electron microscopy revealed the presence of spherical nanoparticles randomly dispersed within the carbon nanofibers. The nickel nanoparticles have been used as a catalyst to initiate the growth of CNT by PECVD at 600 deg. C. After the growth of CNT onto the ultra-long CNF, SEM imaging revealed the formation of hierarchical carbon nanostructures which consist of CNF sheathed with CNTs. Furthermore, we demonstrate that reducing the growth temperature of CNT to less than 500 deg. C leads to the formation of carbon nanowalls on the CNF instead of CNT. This simple fabrication method allows an easy preparation of hierarchical carbon nanostructures over a large surface area, as well as a simple manipulation of such material in order to integrate it into nanodevices.

  16. GRB 091024A and the nature of ultra-long gamma-ray bursts

    International Nuclear Information System (INIS)

    Virgili, F. J.; Mundell, C. G.; Harrison, R.; Kobayashi, S.; Steele, I. A.; Mottram, C. J.; Clay, N. R.; Pal'shin, V.; Guidorzi, C.; Margutti, R.; Chornock, R.; Melandri, A.; Henden, A.; Updike, A. C.; Cenko, S. B.; Tanvir, N. R.; Cucchiara, A.; Gomboc, A.; Levan, A.; Cano, Z.

    2013-01-01

    We present a broadband study of gamma-ray burst (GRB) 091024A within the context of other ultra-long-duration GRBs. An unusually long burst detected by Konus-Wind (KW), Swift, and Fermi, GRB 091024A has prompt emission episodes covering ∼1300 s, accompanied by bright and highly structured optical emission captured by various rapid-response facilities, including the 2 m autonomous robotic Faulkes North and Liverpool Telescopes, KAIT, S-LOTIS, and the Sonoita Research Observatory. We also observed the burst with 8 and 10 m class telescopes and determine the redshift to be z = 1.0924 ± 0.0004. We find no correlation between the optical and γ-ray peaks and interpret the optical light curve as being of external origin, caused by the reverse and forward shock of a highly magnetized jet (R B ≈ 100-200). Low-level emission is detected throughout the near-background quiescent period between the first two emission episodes of the KW data, suggesting continued central-engine activity; we discuss the implications of this ongoing emission and its impact on the afterglow evolution and predictions. We summarize the varied sample of historical GRBs with exceptionally long durations in gamma-rays (≳1000 s) and discuss the likelihood of these events being from a separate population; we suggest ultra-long GRBs represent the tail of the duration distribution of the long GRB population.

  17. Fabrication of high quality, ultra-long fiber Bragg gratings: up to 2 million periods in phase.

    Science.gov (United States)

    Gagné, Mathieu; Loranger, Sébastien; Lapointe, Jerome; Kashyap, Raman

    2014-01-13

    The fabrication and characterization of high quality ultra-long (up to 1m) fiber Bragg gratings (FBGs) is reported. A moving phase mask and an electro-optic phase-modulation (EOPM) based interferometer are used with a high precision 1-meter long translation stage and compared. A novel interferometer position feedback scheme to simplify the fabrication process is proposed and analyzed. The ultra-long uniform FBGs show near perfect characteristics of a few picometers bandwidth, symmetrical, near theory-matching group-delay and transmission spectra. Grating characterization using optical backscattering reflectometry and chirped FBGs are also demonstrated. Limitations of the schemes are discussed.

  18. Ultra-long-pulse microwave negative high voltage power supply with fast protection

    International Nuclear Information System (INIS)

    Xu Weihua; Wu Junshuan; Zheng Guanghua; Huang Qiaolin; Yang Chunsheng; Zhou Yuanwei; Chen Yonghao

    1998-01-01

    Two 1.4 MW high voltage power supply (HVPS) modules with 3-5 s pulse duration have been developed for LHCD experiment in the HT-7 tokamak. The power source consists of a pulsed generator and the electric circuit. Duration of the ultra-long-pulse is controlled by switching-on dc relay immediately and switching-off ac contactor after a given time, and the fast protection is executed by a crowbar. Due to the soft starting of the power source, the problem of overvoltage induced by dc relay switching-on has been solved. Each power supply module outputs a rated power (-35 kV, 40 A) on the dummy load. With the klystrons connected as the load of the power supply modules, LHCD experiments have been conducted successfully in the HT-7 tokamak

  19. Morphology of self-catalyzed GaN nanowires and chronology of their formation by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Galopin, E; Largeau, L; Patriarche, G; Travers, L; Glas, F; Harmand, J C

    2011-01-01

    GaN nanowires are synthesized by plasma-assisted molecular beam epitaxy on Si(111) substrates. The strong impact of the cell orientation relative to the substrate on the nanowire morphology is shown. To study the kinetics of growth, thin AlN markers are introduced periodically during NW growth. These markers are observed in single nanowires by transmission electron microscopy, giving access to the chronology of the nanowire formation and to the time evolution of the nanowire morphology. A long delay precedes the beginning of nanowire formation. Then, their elongation proceeds at a constant rate. Later, shells develop on the side-wall facets by ascending growth of layer bunches which first agglomerate at the nanowire foot.

  20. Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

  1. AlN piezoelectric films for sensing and actuation

    NARCIS (Netherlands)

    Tran, A.T.

    2014-01-01

    Aluminum Nitride (AlN) is explored as a thin film material for piezoelectric MEMS applications. A pulse DC reactive sputtering technique is used to deposit the AlN thin films and process parameters are optimized to obtain good crystallinity and high c-axis orientation films. A CMOS compatible

  2. Magnetars in Ultra-Long Gamma-Ray Bursts and GRB 111209A

    Energy Technology Data Exchange (ETDEWEB)

    Gompertz, B.; Fruchter, A., E-mail: bgompertz@stsci.edu [Space Telescope Science Institute, Baltimore, MD 21218 (United States)

    2017-04-10

    Supernova 2011kl, associated with the ultra-long gamma-ray burst (ULGRB) 111209A, exhibited a higher-than-normal peak luminosity, placing it in the parameter space between regular supernovae and super-luminous supernovae. Its light curve can only be matched by an abnormally high fraction of {sup 56}Ni that appears inconsistent with the observed spectrum, and as a result it has been suggested that the supernova, and by extension the gamma-ray burst, are powered by the spin-down of a highly magnetized millisecond pulsar, known as a magnetar. We investigate the broadband observations of ULGRB 111209A and find two independent measures that suggest a high density circumburst environment. However, the light curve of the GRB afterglow shows no evidence of a jet break (the steep decline that would be expected as the jet slows due to the resistance of the external medium) out to three weeks after trigger, implying a wide jet. Combined with the high isotropic energy of the burst, this implies that only a magnetar with a spin period of ∼1 ms or faster can provide enough energy to power both ULGRB 111209A and Supernova 2011kl.

  3. Optimization of Root Section for Ultra-long Steam Turbine Rotor Blade

    Science.gov (United States)

    Hála, Jindřich; Luxa, Martin; Šimurda, David; Bobčík, Marek; Novák, Ondřej; Rudas, Bartoloměj; Synáč, Jaroslav

    2018-04-01

    This study presents the comparison of aerodynamic performances of two successive designs of the root profiles for the ultra-long rotor blade equipped with a straight fir-tree dovetail. Since aerodynamic and strength requirements laid upon the root section design are contradictory, it is necessary to aerodynamically optimize the design within the limits given by the foremost strength requirements. The most limiting criterion of the static strength is the size of the blade cross-section, which is determined by the number of blades in a rotor and also by the shape and size of a blade dovetail. The aerodynamic design requires mainly the zero incidence angle at the inlet of a profile and in the ideal case ensures that the load does not exceed a limit load condition. Moreover, the typical root profile cascades are transonic with supersonic exit Mach number, therefore, the shape of a suction side and a trailing edge has to respect transonic expansion of a working gas. In this paper, the two variants of root section profile cascades are compared and the aerodynamic qualities of both variants are verified using CFD simulation and two mutually independent experimental methods of measurements (optical and pneumatic).

  4. Special considerations for qualifying thin films for super pressure pumpkin ultra long duration balloon missions

    Science.gov (United States)

    Said, Magdi A.

    2004-01-01

    The assessment of creep and dynamic response behaviors on materials intended for ultra long duration balloon (ULDB) applications is essential. The first provides needed information for design and fabrication. The second ensures that the film is sufficiently tough to survive the dynamic events during launch and ascent. Characterization and assessment of these two important parameters are discussed in this paper. Visco-elastic behavior of materials in a loaded structure, such as the ULDB film change their geometry significantly over time under load causing possible changes in the load path and the stress distribution. These changes must be held in check to satisfy the functional requirements of the structure over its service life. Typically, the balloon experiences during its service life various environmental conditions each with a different creep response. These are characterized by a simplified load temperature history for the purpose of lifetime response assessment. At mid-latitudes a significant portion of the service life is spent at night, i.e., at low temperature and low load; for the ULDB film this night-time contribution to creep is negligible. By contrast, flight exposure in an Antarctic summer is at an almost constant high temperature and corresponding high pressure. This paper presents the creep behavior of the ULDB film as a function of load, temperature, and time along with an overview of its implementation in the design. In addition, it presents a quantitative assessment on the toughness of the material under dynamic "Snatch" loading.

  5. Integrating cell on chip—Novel waveguide platform employing ultra-long optical paths

    Directory of Open Access Journals (Sweden)

    Lena Simone Fohrmann

    2017-09-01

    Full Text Available Optical waveguides are the most fundamental building blocks of integrated optical circuits. They are extremely well understood, yet there is still room for surprises. Here, we introduce a novel 2D waveguide platform which affords a strong interaction of the evanescent tail of a guided optical wave with an external medium while only employing a very small geometrical footprint. The key feature of the platform is its ability to integrate the ultra-long path lengths by combining low propagation losses in a silicon slab with multiple reflections of the guided wave from photonic crystal (PhC mirrors. With a reflectivity of 99.1% of our tailored PhC-mirrors, we achieve interaction paths of 25 cm within an area of less than 10 mm2. This corresponds to 0.17 dB/cm effective propagation which is much lower than the state-of-the-art loss of approximately 1 dB/cm of single mode silicon channel waveguides. In contrast to conventional waveguides, our 2D-approach leads to a decay of the guided wave power only inversely proportional to the optical path length. This entirely different characteristic is the major advantage of the 2D integrating cell waveguide platform over the conventional channel waveguide concepts that obey the Beer-Lambert law.

  6. Integrating cell on chip—Novel waveguide platform employing ultra-long optical paths

    Science.gov (United States)

    Fohrmann, Lena Simone; Sommer, Gerrit; Pitruzzello, Giampaolo; Krauss, Thomas F.; Petrov, Alexander Yu.; Eich, Manfred

    2017-09-01

    Optical waveguides are the most fundamental building blocks of integrated optical circuits. They are extremely well understood, yet there is still room for surprises. Here, we introduce a novel 2D waveguide platform which affords a strong interaction of the evanescent tail of a guided optical wave with an external medium while only employing a very small geometrical footprint. The key feature of the platform is its ability to integrate the ultra-long path lengths by combining low propagation losses in a silicon slab with multiple reflections of the guided wave from photonic crystal (PhC) mirrors. With a reflectivity of 99.1% of our tailored PhC-mirrors, we achieve interaction paths of 25 cm within an area of less than 10 mm2. This corresponds to 0.17 dB/cm effective propagation which is much lower than the state-of-the-art loss of approximately 1 dB/cm of single mode silicon channel waveguides. In contrast to conventional waveguides, our 2D-approach leads to a decay of the guided wave power only inversely proportional to the optical path length. This entirely different characteristic is the major advantage of the 2D integrating cell waveguide platform over the conventional channel waveguide concepts that obey the Beer-Lambert law.

  7. Antenna design and implementation for the future space Ultra-Long wavelength radio telescope

    Science.gov (United States)

    Chen, Linjie; Aminaei, Amin; Gurvits, Leonid I.; Wolt, Marc Klein; Pourshaghaghi, Hamid Reza; Yan, Yihua; Falcke, Heino

    2018-04-01

    In radio astronomy, the Ultra-Long Wavelengths (ULW) regime of longer than 10 m (frequencies below 30 MHz), remains the last virtually unexplored window of the celestial electromagnetic spectrum. The strength of the science case for extending radio astronomy into the ULW window is growing. However, the opaqueness of the Earth's ionosphere makes ULW observations by ground-based facilities practically impossible. Furthermore, the ULW spectrum is full of anthropogenic radio frequency interference (RFI). The only radical solution for both problems is in placing an ULW astronomy facility in space. We present a concept of a key element of a space-borne ULW array facility, an antenna that addresses radio astronomical specifications. A tripole-type antenna and amplifier are analysed as a solution for ULW implementation. A receiver system with a low power dissipation is discussed as well. The active antenna is optimized to operate at the noise level defined by the celestial emission in the frequency band 1 - 30 MHz. Field experiments with a prototype tripole antenna enabled estimates of the system noise temperature. They indicated that the proposed concept meets the requirements of a space-borne ULW array facility.

  8. Utilization of Minor Actinides as a Fuel Component for Ultra-Long Life VHTR Configurations: Designs, Advantages and Limitations

    International Nuclear Information System (INIS)

    Tsvetkov, Pavel V.

    2009-01-01

    This project assessed the advantages and limitations of using minor actinides as a fuel component to achieve ultra-long life Very High Temperature Reactor (VHTR) configurations. Researchers considered and compared the capabilities of pebble-bed and prismatic core designs with advanced actinide fuels to achieve ultra-long operation without refueling. Since both core designs permit flexibility in component configuration, fuel utilization, and fuel management, it is possible to improve fissile properties of minor actinides by neutron spectrum shifting through configuration adjustments. The project studied advanced actinide fuels, which could reduce the long-term radio-toxicity and heat load of high-level waste sent to a geologic repository and enable recovery of the energy contained in spent fuel. The ultra-long core life autonomous approach may reduce the technical need for additional repositories and is capable to improve marketability of the Generation IV VHTR by allowing worldwide deployment, including remote regions and regions with limited industrial resources. Utilization of minor actinides in nuclear reactors facilitates developments of new fuel cycles towards sustainable nuclear energy scenarios.

  9. Utilization of Minor Actinides as a Fuel Component for Ultra-Long Life Bhr Configurations: Designs, Advantages and Limitations

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Pavel V. Tsvetkov

    2009-05-20

    This project assessed the advantages and limitations of using minor actinides as a fuel component to achieve ultra-long life Very High Temperature Reactor (VHTR) configurations. Researchers considered and compared the capabilities of pebble-bed and prismatic core designs with advanced actinide fuels to achieve ultra-long operation without refueling. Since both core designs permit flexibility in component configuration, fuel utilization, and fuel management, it is possible to improve fissile properties of minor actinides by neutron spectrum shifting through configuration adjustments. The project studied advanced actinide fuels, which could reduce the long-term radio-toxicity and heat load of high-level waste sent to a geologic repository and enable recovery of the energy contained in spent fuel. The ultra-long core life autonomous approach may reduce the technical need for additional repositories and is capable to improve marketability of the Generation IV VHTR by allowing worldwide deployment, including remote regions and regions with limited industrial resources. Utilization of minor actinides in nuclear reactors facilitates developments of new fuel cycles towards sustainable nuclear energy scenarios.

  10. A new population of ultra-long duration gamma-ray bursts

    Energy Technology Data Exchange (ETDEWEB)

    Levan, A. J.; Brown, G. C.; Tunnicliffe, R. L. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom); Tanvir, N. R.; Starling, R. L. C.; Wiersema, K.; Page, K. L.; Wynn, G. A.; O' Brien, P. T. [Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Perley, D. A. [Department of Astronomy, California Institute of Technology, MC 249-17, 1200 East California Blvd., Pasadena, CA 91125 (United States); Schulze, S. [Pontificia Universidad Católica de Chile, Departamento de Astronomía y Astrofísica, Casilla 306, Santiago 22 (Chile); Chornock, R.; Malesani, D.; Watson, D.; Berger, E. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Hjorth, J. [Dark Cosmology Centre, Niels Bohr Institute, University of Copenhagen, Juliane Maries Vej 30, DK-2100 Københaven Ø (Denmark); Cenko, S. B. [Department of Astronomy, University of California, Berkeley, CA 94720-3411 (United States); Fruchter, A. S. [Space Telescope Science Institute, 3700 San Martin Drive, Baltimore, MD21218 (United States); Jakobsson, P. [Centre for Astrophysics and Cosmology, Science Institute, University of Iceland, Dunhagi 5, IS-107 Reykjavk (Iceland); Bersier, D., E-mail: a.j.levan@warwick.ac.uk [Astrophysics Research Institute, Liverpool John Moores University, Egerton Wharf, Birkenhead CH41 1LD (United Kingdom); and others

    2014-01-20

    We present comprehensive multiwavelength observations of three gamma-ray bursts (GRBs) with durations of several thousand seconds. We demonstrate that these events are extragalactic transients; in particular, we resolve the long-standing conundrum of the distance of GRB 101225A (the 'Christmas-day burst'), finding it to have a redshift z = 0.847 and showing that two apparently similar events (GRB 111209A and GRB 121027A) lie at z = 0.677 and z = 1.773, respectively. The systems show extremely unusual X-ray and optical light curves, very different from classical GRBs, with long-lasting, highly variable X-ray emission and optical light curves that exhibit little correlation with the behavior seen in the X-ray. Their host galaxies are faint, compact, and highly star-forming dwarf galaxies, typical of 'blue compact galaxies'. We propose that these bursts are the prototypes of a hitherto largely unrecognized population of ultra-long GRBs, which while observationally difficult to detect may be astrophysically relatively common. The long durations may naturally be explained by the engine-driven explosions of stars of much larger radii than normally considered for GRB progenitors, which are thought to have compact Wolf-Rayet progenitor stars. However, we cannot unambiguously identify supernova signatures within their light curves or spectra. We also consider the alternative possibility that they arise from the tidal disruption of stars by massive black holes and conclude that the associated timescales are only consistent with the disruption of compact stars (e.g., white dwarfs) by black holes of relatively low mass (<10{sup 5} M {sub ☉}).

  11. The enigmatic ultra-long run-out of seafloor density driven flows

    Science.gov (United States)

    Dorrell, R. M.

    2017-12-01

    Dilute, particulate-laden, density-driven flows - turbidity currents - are a predominant mechanism for transporting sediment from source to sink in deep marine environments. These flows sculpt channels on the seafloor and, as evidenced by a wealth of bathymetric data, can travel for >1000km, forming some of the largest sedimentary landforms on the planet. For turbidity currents to travel such large dsitances, sediment must be self-maintained in suspension, i.e., be in a state of autosuspension. It has been shown that such self-maintained sediment suspensions can only occur whilst inertial forces are greater than gravitational forces, entailing supercritical flow. This conclusion is paradoxical, as inertia dominated flows rapidly entrain fluid, thereby thickening and slowing to become subcritical. However, current theory can only truly be applied to the proximal upper slope regions of seafloor channels where incised flows are fully confined. This contrasts with the distal reaches of long run out turbidity current systems, where the flow is only partially confined through self-channelization. Here it is shown that overspill of partially confined flow has a significant effect on the hydro- and morphodynamics of turbidity current systems. A new model is derived that shows that channel overspill acts to negate the effects of ambient fluid entrainment: a dynamic balance that limits increases in flow depth and maintains supercritical flow throughout the channel. In the new model mass, momentum and energy conservation is modulated by flow overspill onto channel banks, necessarily requiring description of the vertical structure of the flow. Analysis of continuously stratified steady state flow dynamics shows that the integration of overspill and stratification is necessary to enable maintained autosuspension and thus predict the ultra-long run-out of turbidity currents.

  12. Efficient coding and detection of ultra-long IDs for visible light positioning systems.

    Science.gov (United States)

    Zhang, Hualong; Yang, Chuanchuan

    2018-05-14

    Visible light positioning (VLP) is a promising technique to complement Global Navigation Satellite System (GNSS) such as Global positioning system (GPS) and BeiDou Navigation Satellite System (BDS) which features the advantage of low-cost and high accuracy. The situation becomes even more crucial for indoor environments, where satellite signals are weak or even unavailable. For large-scale application of VLP, there would be a considerable number of Light emitting diode (LED) IDs, which bring forward the demand of long LED ID detection. In particular, to provision indoor localization globally, a convenient way is to program a unique ID into each LED during manufacture. This poses a big challenge for image sensors, such as the CMOS camera in everybody's hands since the long ID covers the span of multiple frames. In this paper, we investigate the detection of ultra-long ID using rolling shutter cameras. By analyzing the pattern of data loss in each frame, we proposed a novel coding technique to improve the efficiency of LED ID detection. We studied the performance of Reed-Solomon (RS) code in this system and designed a new coding method which considered the trade-off between performance and decoding complexity. Coding technique decreases the number of frames needed in data processing, significantly reduces the detection time, and improves the accuracy of detection. Numerical and experimental results show that the detected LED ID can be much longer with the coding technique. Besides, our proposed coding method is proved to achieve a performance close to that of RS code while the decoding complexity is much lower.

  13. The ultra-long GRB 111209A. II. Prompt to afterglow and afterglow properties

    Energy Technology Data Exchange (ETDEWEB)

    Stratta, G. [Osservatorio Astronomico di Roma (OAR/INAF), via Frascati 33, I-00040 Monte Porzio Catone (Italy); Gendre, B.; Boër, M. [ARTEMIS, UMR 7250 (CNRS/OCA/UNS), boulevard de l' Observatoire, BP 4229, F-06304 Nice Cedex (France); Atteia, J. L. [Université de Toulouse, UPS-OMP, IRAP, F-31400 Toulouse (France); Coward, D. M.; Howell, E. [School of Physics, University of Western Australia (UWA), Crawley, WA 6009 (Australia); De Pasquale, M.; Oates, S. [Mullard Space Science Laboratory (MSSL), University College London, Holmbury St. Mary, Dorking, Surrey RH5 6NT (United Kingdom); Klotz, A. [IRAP, 14, avenue Edouard Belin, F-31400 Toulouse (France); Piro, L. [Istituto di Astrofisica e Planetologia Spaziali di Roma (IAPS/INAF), via fosso del cavaliere 100, I-00133 Roma (Italy)

    2013-12-10

    The 'ultra-long' gamma-ray burst GRB 111209A at redshift z = 0.677 is the longest GRB ever observed thus far, with a rest frame prompt emission duration of ∼4 hr. In order to explain the burst exceptional longevity, a low-metallicity blue supergiant progenitor was invoked. In this article we further constrain the phenomenology and progenitor properties of this peculiar GRB by performing a multiband temporal and spectral analysis of both the prompt and the afterglow emission. We use proprietary and publicly available data from Swift, Konus WIND, XMM-Newton, and TAROT, as well as from other ground-based optical and radio telescopes. We find some peculiar properties that are possibly connected to the exceptional nature of this burst, namely: (1) an unprecedented large optical delay of 410 ± 50 s between the peak time in gamma-rays and the peak time in the optical of a marked multiwavelength flare; (2) multiwavelength prompt emission spectral modeling requires a certain amount of dust in the circumburst environment. The dust produces a rest frame visual extinction of A{sub V} = 0.3-1.5 mag, and may undergo destruction at late times; and (3) we detect the presence of a hard spectral extra power-law component at the end of the X-ray steep steep decay phase and before the start of the X-ray afterglow, which has never been revealed thus far in past GRBs. The optical afterglow shows more usual properties; it has a flux power-law decay with an index of 1.6 ± 0.1 and a late rebrightening feature observed at ∼1.1 the day after the first Burst Alert Telescope trigger. We discuss our findings in the context of several possible interpretations that have been given thus far of the complex multiband GRB phenomenology and propose a binary channel formation for the blue supergiant progenitor.

  14. The ultra-long GRB 111209A. II. Prompt to afterglow and afterglow properties

    International Nuclear Information System (INIS)

    Stratta, G.; Gendre, B.; Boër, M.; Atteia, J. L.; Coward, D. M.; Howell, E.; De Pasquale, M.; Oates, S.; Klotz, A.; Piro, L.

    2013-01-01

    The 'ultra-long' gamma-ray burst GRB 111209A at redshift z = 0.677 is the longest GRB ever observed thus far, with a rest frame prompt emission duration of ∼4 hr. In order to explain the burst exceptional longevity, a low-metallicity blue supergiant progenitor was invoked. In this article we further constrain the phenomenology and progenitor properties of this peculiar GRB by performing a multiband temporal and spectral analysis of both the prompt and the afterglow emission. We use proprietary and publicly available data from Swift, Konus WIND, XMM-Newton, and TAROT, as well as from other ground-based optical and radio telescopes. We find some peculiar properties that are possibly connected to the exceptional nature of this burst, namely: (1) an unprecedented large optical delay of 410 ± 50 s between the peak time in gamma-rays and the peak time in the optical of a marked multiwavelength flare; (2) multiwavelength prompt emission spectral modeling requires a certain amount of dust in the circumburst environment. The dust produces a rest frame visual extinction of A V = 0.3-1.5 mag, and may undergo destruction at late times; and (3) we detect the presence of a hard spectral extra power-law component at the end of the X-ray steep steep decay phase and before the start of the X-ray afterglow, which has never been revealed thus far in past GRBs. The optical afterglow shows more usual properties; it has a flux power-law decay with an index of 1.6 ± 0.1 and a late rebrightening feature observed at ∼1.1 the day after the first Burst Alert Telescope trigger. We discuss our findings in the context of several possible interpretations that have been given thus far of the complex multiband GRB phenomenology and propose a binary channel formation for the blue supergiant progenitor.

  15. The Ultra-long GRB 111209A. II. Prompt to Afterglow and Afterglow Properties

    Science.gov (United States)

    Stratta, G.; Gendre, B.; Atteia, J. L.; Boër, M.; Coward, D. M.; De Pasquale, M.; Howell, E.; Klotz, A.; Oates, S.; Piro, L.

    2013-12-01

    The "ultra-long" gamma-ray burst GRB 111209A at redshift z = 0.677 is the longest GRB ever observed thus far, with a rest frame prompt emission duration of ~4 hr. In order to explain the burst exceptional longevity, a low-metallicity blue supergiant progenitor was invoked. In this article we further constrain the phenomenology and progenitor properties of this peculiar GRB by performing a multiband temporal and spectral analysis of both the prompt and the afterglow emission. We use proprietary and publicly available data from Swift, Konus WIND, XMM-Newton, and TAROT, as well as from other ground-based optical and radio telescopes. We find some peculiar properties that are possibly connected to the exceptional nature of this burst, namely: (1) an unprecedented large optical delay of 410 ± 50 s between the peak time in gamma-rays and the peak time in the optical of a marked multiwavelength flare; (2) multiwavelength prompt emission spectral modeling requires a certain amount of dust in the circumburst environment. The dust produces a rest frame visual extinction of AV = 0.3-1.5 mag, and may undergo destruction at late times; and (3) we detect the presence of a hard spectral extra power-law component at the end of the X-ray steep steep decay phase and before the start of the X-ray afterglow, which has never been revealed thus far in past GRBs. The optical afterglow shows more usual properties; it has a flux power-law decay with an index of 1.6 ± 0.1 and a late rebrightening feature observed at ~1.1 the day after the first Burst Alert Telescope trigger. We discuss our findings in the context of several possible interpretations that have been given thus far of the complex multiband GRB phenomenology and propose a binary channel formation for the blue supergiant progenitor.

  16. Effect of diffusion from a lateral surface on the rate of GaN nanowire growth

    International Nuclear Information System (INIS)

    Sibirev, N. V.; Tchernycheva, M.; Cirlin, G. E.; Patriarche, G.; Harmand, J. C.; Dubrovskii, V. G.

    2012-01-01

    The kinetics of the growth of GaN crystalline nanowires on a Si (111) surface with no catalyst is studied experimentally and theoretically. Noncatalytic GaN nanowires were grown by molecular-beam epitaxy with AlN inserts, which makes it possible to determine the rate of the vertical growth of nanowires. A model for the formation of GaN nanowires is developed, and an expression for their rate of growth is derived. It is shown that, in the general case, the dependence of the rate of growth on the nanowire diameter has a minimum. The diameter corresponding to the experimentally observed minimum of the rate of growth steadily increases with increasing diffusion flux from the lateral surface.

  17. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers

    International Nuclear Information System (INIS)

    Mi, Z; Zhao, S; Djavid, M; Liu, X; Kang, J; Woo, S Y; Bugnet, M; Botton, G A; Kong, X; Guo, H; Ji, W; Liu, Z

    2016-01-01

    We report on the detailed molecular beam epitaxial growth and characterization of Al(Ga)N nanowire heterostructures on Si and their applications for deep ultraviolet light emitting diodes and lasers. The nanowires are formed under nitrogen-rich conditions without using any metal catalyst. Compared to conventional epilayers, Mg-dopant incorporation is significantly enhanced in nearly strain- and defect-free Al(Ga)N nanowire structures, leading to efficient p -type conduction. The resulting Al(Ga)N nanowire LEDs exhibit excellent performance, including a turn-on voltage of ∼5.5 V for an AlN nanowire LED operating at 207 nm. The design, fabrication, and performance of an electrically injected AlGaN nanowire laser operating in the UV-B band is also presented. (paper)

  18. Ferromagnetic properties of Mn-doped AlN

    International Nuclear Information System (INIS)

    Li, H.; Bao, H.Q.; Song, B.; Wang, W.J.; Chen, X.L.; He, L.J.; Yuan, W.X.

    2008-01-01

    Mn-doped AlN polycrystalline powders with a wurtzite structure were synthesized by solid-state reactions. A red-orange band at 600 nm, due to Mn 3+ incorporated into the AlN lattice, is observed in the photoluminescence (PL) spectrum at room temperature (RT). Magnetic measurements show the samples possess hysteresis loops up to 300 K, indicating that the obtained powders are ferromagnetic at around RT. The Mn concentration-induced RT ferromagnetism is less than 1 at%. Our results confirm that the RT ferromagnetism can be realized in Mn-doped AlN

  19. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  20. Subchannel analysis of a small ultra-long cycle fast reactor core

    International Nuclear Information System (INIS)

    Seo, Han; Kim, Ji Hyun; Bang, In Cheol

    2014-01-01

    Highlights: • The UCFR-100 is small-sized one of 60 years long-life nuclear reactors without refueling. • The design safety limits of the UCFR-100 are evaluated using MATRA-LMR. • The subchannel results are below the safety limits of general SFR design criteria. - Abstract: Thermal-hydraulic evaluation of a small ultra-long cycle fast reactor (UCFR) core is performed based on existing safety regulations. The UCFR is an innovative reactor newly designed with long-life core based on the breed-and-burn strategy and has a target electric power of 100 MWe (UCFR-100). Low enriched uranium (LEU) located at the bottom region of the core play the role of igniter to operate the UCFR for 60 years without refueling. A metallic form is selected as a burning fuel region material after the LEU location. HT-9 and sodium are used as cladding and coolant materials, respectively. In the present study, MATRA-LMR, subchannel analysis code, is used for evaluating the safety design limit of the UCFR-100 in terms of fuel, cladding, and coolant temperature distributions in the core as design criteria of a general fast reactor. The start-up period (0 year of operation), the middle of operating period (30 years of operation), and the end of operating cycle (60 years of operation) are analyzed and evaluated. The maximum cladding surface temperature (MCST) at the BOC (beginning of core life) is 498 °C on average and 551 °C when considering peaking factor, while the MCST at the MOC (middle of core life) is 498 °C on average and 548 °C in the hot channel, respectively, and the MCST at the EOC (end of core life) is 499 °C on average and 538 °C in the hot channel, respectively. The maximum cladding surface temperature over the long cycle is found at the BOC due to its high peaking factor. It is found that all results including fuel rods, cladding, and coolant exit temperature are below the safety limit of general SFR design criteria

  1. Tree-like SnO2 nanowires and optical properties

    International Nuclear Information System (INIS)

    Tao Tao; Chen Qiyuan; Hu Huiping; Chen Ying

    2011-01-01

    Research highlights: → Tree-like SnO 2 nanowires can be grown as low as 1100 deg. C by a vapour-solid process using a milled SnO 2 powder as the evaporation source. → FT-IR and PL measurements have shown that the tree-like nanostructures lead to superb physical properties. → The PL spectrum of such tree-like nanowires exhibits a strong PL peak at 548 nm. - Abstract: Tree-like SnO 2 nanowires have been grown by a vapor-solid process using a milled SnO 2 powder as the evaporation source. Phase, structural evolution and chemical composition were investigated using X-ray diffraction (XRD), X-ray spectrometry (EDS), and scanning electron microscopy (SEM). The process yields a large proportion of ultra-long rutile nanowires of 50-150 nm diameter and lengths up to several tens of micrometers. High-resolution transmission electron microscopy (HRTEM) shows that the SnO 2 nanowires are single crystals in the (1 0 1) growth direction with scattered smaller crystals or nanowires as the tree branches. The SnO 2 nanostructures were also examined using Fourier transform infra-red (FT-IR) and photoluminescence (PL) spectroscopy. A strong emission band centered at 548 nm dominated the PL spectrum of the tree-like nanowires.

  2. Compatibility of AlN ceramics with molten lithium

    Energy Technology Data Exchange (ETDEWEB)

    Yoneoka, Toshiaki; Sakurai, Toshiharu; Sato, Toshihiko; Tanaka, Satoru [Tokyo Univ., Department of Quantum Engineering and Systems Science, Tokyo (Japan)

    2002-04-01

    AlN ceramics were a candidate for electrically insulating materials and facing materials against molten breeder in a nuclear fusion reactor. In the nuclear fusion reactor, interactions of various structural materials with solid and liquid breeder materials as well as coolant materials are important. Therefore, corrosion tests of AlN ceramics with molten lithium were performed. AlN specimens of six kinds, different in sintering additives and manufacturing method, were used. AlN specimens were immersed into molten lithium at 823 K. Duration for the compatibility tests was about 2.8 Ms (32 days). Specimens with sintering additive of Y{sub 2}O{sub 3} by about 5 mass% formed the network structure of oxide in the crystals of AlN. It was considered that the corrosion proceeded by reduction of the oxide network and the penetration of molten lithium through the reduced pass of this network. For specimens without sintering additive, Al{sub 2}O{sub 3} containing by about 1.3% in raw material was converted to fine oxynitride particles on grain boundary or dissolved in AlN crystals. After immersion into lithium, these specimens were found to be sound in shape but reduced in electrical resistivity. These degradation of the two types specimens were considered to be caused by the reduction of oxygen components. On the other hand, a specimen sintered using CaO as sintering additive was finally became appreciably high purity. This specimen showed good compatibility for molten lithium at least up to 823 K. It was concluded that the reduction of oxygen concentration in AlN materials was essential in order to improve the compatibility for molten lithium. (author)

  3. Thermoluminescence properties of AlN ceramics

    DEFF Research Database (Denmark)

    Trinkler, L.; Christensen, P.; Agersnap Larsen, N.

    1998-01-01

    The paper describes thermoluminescence (TL) properties of AlN:Y2O3 ceramics irradiated with ionising radiation. A high TL sensitivity of AlN:Y2O3 ceramics to radiation encouraged a study of the AlN ceramics for application as a dosimetric material. The paper presents experimental data on: glow...... curve, emission spectrum, dose response, energy dependence, influence of heating rate and fading rate. The measured TL characteristics were compared with those of well-known, widely used TLDs, i.e. LiF:Mg,Ti, LiF:Mg,Cu,P and Al2O3:C. It is concluded that AlN:Y2O3 ceramics showing a radiation sensitivity...... which is approximately 50 times greater than that of LiF:Mg,Ti is an interesting dosimetry material; however due to a high fading rate of the TL of AlN:Y2O3 on storage at room temperature, a further development of the material for improving the fading characteristics is needed for its application...

  4. Puente Alnö – Suecia

    Directory of Open Access Journals (Sweden)

    Editorial, Equipo

    1974-07-01

    Full Text Available This bridge that joins the island of Alnô with the peninsula near the port of Sundsvall In the north of Sweden is one of the many of prestressed concrete that have been constructed lately all over the world with the system of successive corbels. Until recently it was the longest bridge in the country and distinguishes itself by the elegance and slenderness of its longer arches and by the deep foundation system used to construct the four central bridge piers. It has been planned and constructed by Skanska Cementgjuteriet, a firm that is specializing in this type of structure.Este puente, que une la isla de Alno con la península, cerca del puerto de Sundsvall, en el norte de Suecia, es uno de los muchos de hormigón pretensado que se han construido últimamente en todo el mundo por el sistema de voladizos sucesivos. Hasta hace poco era el puente más largo del país y destaca por la elegancia y esbeltez de sus arcos más largos y por el sistema de cimentación profunda empleado para construir las cuatro pilas centrales. Ha sido proyectado y construido por Skanska Cementgjuteriet, empresa que se ha especializado en este tipo de estructura.

  5. Using the ultra-long pulse width pulsed dye laser and elliptical spot to treat resistant nasal telangiectasia.

    Science.gov (United States)

    Madan, Vishal; Ferguson, Janice

    2010-01-01

    Thick linear telangiectasia on the ala nasi and nasolabial crease can be resistant to treatment with the potassium-titanyl-phosphate (KTP) laser and the traditional round spot on a pulsed dye laser (PDL). We evaluated the efficacy of a 3 mm x 10 mm elliptical spot using the ultra-long pulse width on a Candela Vbeam(R) PDL for treatment of PDL- and KTP laser-resistant nasal telangiectasia. Nasal telangiectasia resistant to PDL (12 patients) and KTP laser (12 patients) in 18 patients were treated with a 3 mm x 10 mm elliptical spot on the ultra-long pulse pulsed dye laser (ULPDL) utilising long pulse width [595 nm, 40 ms, double pulse, 30:20 dynamic cooling device (DCD)]. Six patients had previously received treatment with both PDL and KTP laser prior to ULPDL (40 treatments, range1-4, mean 2.2). Complete clearance was seen in ten patients, and eight patients displayed more than 80% improvement after ULPDL treatment. Self-limiting purpura occurred with round spot PDL and erythema with KTP laser and ULPDL. Subtle linear furrows along the treatment sites were seen in three patients treated with the KTP laser. ULPDL treatment delivered using a 3 mm x 10 mm elliptical spot was non-purpuric and highly effective in the treatment of nasal telangiectasia resistant to KTP laser and PDL.

  6. Properties of polymethyl methacrylate-based nanocomposites: Reinforced with ultra-long chitin nanofiber extracted from crab shells

    International Nuclear Information System (INIS)

    Chen, Chuchu; Li, Dagang; Hu, Qinqin; Wang, Ru

    2014-01-01

    Highlights: • Using waste crab shells to develop high-performance composites by simple method. • Combining the anatomic analysis of crab shell with the design of composite. • Introducing a 4-step all-mechanical treatment to prepare ultra-long chitin fiber. • Incorporation of chitin nanofiber improves properties of PMMA/Chitin composite. - Abstract: Ultra-long chitin nanofibers were incorporated into polymethyl methacrylate (PMMA) resin to prepared PMMA/Chitin nanocomposites with improved properties. Transmission electron microscopy (TEM) images showed that through the introduced 4-step all-mechanical treatment, the average aspect ratio of the obtained chitin fiber was up to 1000 with the length at dozens of micron range. Due to the laminated structure formed by “layer-by-layer” effect, tensile strength and Young’s modulus of the prepared composite were significantly enhanced after the filling of chitin nanofibers, as compared with neat PMMA. Light transmittance test indicated that increasing the fiber content causes little light scattering because the nano-scalar network which is smaller enough than the visible wavelength could well preserve the original transparency of PMMA. Furthermore, chitin nanofiber film with extremely low thermal expansion improved the thermal stability of PMMA in a great degree. This could lead to various commercial applications including flexible electronic printing, organic thin-film photovoltaic devices, and is a significantly environmental move towards the sustainable utilization of marine-river crab shell wastes

  7. The decision support research of ultra-long distance pullback force computing model through the process of pipeline crossing pullback

    International Nuclear Information System (INIS)

    Xia, Huan; Liu, Huan; Jiao, Ruyi; Hu, Kun

    2016-01-01

    The calculation of pullback by the analysis of strain on pipe shows that it involves many disciplines. It is hard to build a mechanical model that is very consistent with the actual working conditions and with the general applicability. After summarizing the calculation method of domestic and foreign authorities or national standards, the paper derives a set of its own formulas. Based on statistical data of actual projects, the paper develops a formula more suitable for ultra-long pullback by comparing the computing result with the actual measured drag force, that is for engineering design and site construction personnel reference. The calculated value of ultra-long pullback coincides well with the engineering value. Three components of pullback resistance, all occupy a high proportion in back-dragging load, and the contribution of the pullback load weights back Trawler changes dynamically. Thus proving that the method is a reasonable, simple, reliable and effective method to predict pipeline status, and makes a useful exploration for the research to improve the existing prediction models in the future.

  8. THE BLACK HOLE CENTRAL ENGINE FOR ULTRA-LONG GAMMA-RAY BURST 111209A AND ITS ASSOCIATED SUPERNOVA 2011KL

    Energy Technology Data Exchange (ETDEWEB)

    Gao, He; You, Zhi-Qiang [Department of Astronomy, Beijing Normal University, Beijing 100875 (China); Lei, Wei-Hua; Xie, Wei, E-mail: gaohe@bnu.edu.cn, E-mail: leiwh@hust.edu.cn [School of Physics, Huazhong University of Science and Technology, Wuhan, 430074 (China)

    2016-08-01

    Recently, the first association between an ultra-long gamma-ray burst (GRB) and a supernova was reported, i.e., GRB 111209A/SN 2011kl, enabling us to investigate the physics of central engines or even progenitors for ultra-long GRBs. In this paper, we inspect the broadband data of GRB 111209A/SN 2011kl. The late-time X-ray light curve exhibits a GRB 121027A-like fallback bump, suggesting a black hole (BH) central engine. We thus propose a collapsar model with fallback accretion for GRB 111209A/SN 2011kl. The required model parameters, such as the total mass and radius of the progenitor star, suggest that the progenitor of GRB 111209A is more likely a Wolf–Rayet star instead of a blue supergiant, and the central engine of this ultra-long burst is a BH. The implications of our results are discussed.

  9. Electronic structures of the F-terminated AlN nanoribbons

    Indian Academy of Sciences (India)

    Using the first-principles calculations, electronic properties for the F-terminated AlN nanoribbons with both zigzag and armchair edges are studied. The results show that both the zigzag and armchair AlN nanoribbons are semiconducting and nonmagnetic, and the indirect band gap of the zigzag AlN nanoribbons and the ...

  10. Ultra-long pulse operation using lower hybrid waves on the superconducting high field tokamak TRIAM-1M

    International Nuclear Information System (INIS)

    Moriyama, S.; Nakamura, Y.; Nagao, A.; Jotaki, E.; Nakamura, K.; Hiraki, N.; Itoh, S.

    1990-01-01

    Ultra-long pulse operation (>3 min) was achieved on the superconducting high field tokamak TRIAM-1M. In this operation, the plasma current was maintained with a relatively peaked current distribution by the 2.45 GHz radiofrequency power (P RF ≤ 35 kW) alone. A stationary plasma with a driven current of up to 35 kA and a line averaged electron density of up to 3x10 12 cm -3 was produced by precise plasma position and gas feed control. The extremely long discharge showed the interesting characteristics that the high temperatures of about 1 keV for the electrons and about 0.5 keV for the ions were kept almost constant during steady state current drive and that there was no impurity accumulation which could have a fatally adverse effect on steady state tokamak operation. (author). 16 refs, 17 figs

  11. Insulin degludec in type 1 diabetes: a randomized controlled trial of a new-generation ultra-long-acting insulin compared with insulin glargine

    NARCIS (Netherlands)

    Birkeland, Kåre I.; Home, Philip D.; Wendisch, Ulrich; Ratner, Robert E.; Johansen, Thue; Endahl, Lars A.; Lyby, Karsten; Jendle, Johan H.; Roberts, Anthony P.; DeVries, J. Hans; Meneghini, Luigi F.

    2011-01-01

    Insulin degludec (IDeg) is a basal insulin that forms soluble multihexamers after subcutaneous injection, resulting in an ultra-long action profile. We assessed the efficacy and safety of IDeg formulations administered once daily in combination with mealtime insulin aspart in people with type 1

  12. ALnS2:RE (A=K, Rb; Ln=La, Gd, Lu, Y): New optical materials family

    International Nuclear Information System (INIS)

    Jarý, V.; Havlák, L.; Bárta, J.; Mihóková, E.; Buryi, M.; Nikl, M.

    2016-01-01

    In the presented review paper, new potentially interesting material family, RE-doped ternary sulfides ALnS 2 (RE=Ce, Pr, Sm, Eu, Tb, Tm; A=Rb, K; Ln=La, Gd, Lu, Y) is discussed. Their synthesis is described and the structural and optical properties, characterized by methods of X-ray diffraction, time-resolved luminescence spectroscopy and electron paramagnetic resonance, are summarized and reviewed especially with respect to the influence of their composition. All samples discussed were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their luminescence characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra and decay kinetics, were measured and evaluated in a broad temperature (8–800 K) and concentration (0.002–20% of dopants) range. The application potential of mentioned compounds in the field of white LED solid state lightings or X-ray phosphors is thoroughly discussed. - Highlights: • RE-doped ALnS 2 (A=K, Rb; Ln=La, Gd, Lu, Y) were synthesized. • Their optical characteristics are summarized. • Concentration and temperature dependences of luminescence features investigated. • EPR technique is employed to explain Eu 2+ incorporation into KLuS 2 host. • The application potential in white LED and X-ray phosphors is discussed.

  13. Lead-free LiNbO3 nanowire-based nanocomposite for piezoelectric power generation

    Science.gov (United States)

    2014-01-01

    In a flexible nanocomposite-based nanogenerator, in which piezoelectric nanostructures are mixed with polymers, important parameters to increase the output power include using long nanowires with high piezoelectricity and decreasing the dielectric constant of the nanocomposite. Here, we report on piezoelectric power generation from a lead-free LiNbO3 nanowire-based nanocomposite. Through ion exchange of ultra-long Na2Nb2O6-H2O nanowires, we synthesized long (approximately 50 μm in length) single-crystalline LiNbO3 nanowires having a high piezoelectric coefficient (d33 approximately 25 pmV-1). By blending LiNbO3 nanowires with poly(dimethylsiloxane) (PDMS) polymer (volume ratio 1:100), we fabricated a flexible nanocomposite nanogenerator having a low dielectric constant (approximately 2.7). The nanogenerator generated stable electric power, even under excessive strain conditions (approximately 105 cycles). The different piezoelectric coefficients of d33 and d31 for LiNbO3 may have resulted in generated voltage and current for the e33 geometry that were 20 and 100 times larger than those for the e31 geometry, respectively. This study suggests the importance of the blending ratio and strain geometry for higher output-power generation in a piezoelectric nanocomposite-based nanogenerator. PACS 77.65.-j; 77.84.-s; 73.21.Hb PMID:24386884

  14. Mesoporous TiO2 nanosheets anchored on graphene for ultra long life Na-ion batteries

    Science.gov (United States)

    Zhang, Ruifang; Wang, Yuankun; Zhou, Han; Lang, Jinxin; Xu, Jingjing; Xiang, Yang; Ding, Shujiang

    2018-06-01

    Sodium-ion batteries, which have a similar electrochemical reaction mechanism to lithium-ion batteries, have been considered as one of the most potential lithium-ion battery alternatives due to the rich reserves of sodium. However, it is very hard to find appropriate electrode materials imputing the large radius of sodium-ion. TiO2 is particularly interesting as anodes for sodium-ion batteries due to their reasonable operation voltage, cost, and nontoxicity. To obtain a better electrochemical property, mesoporous TiO2 nanosheets (NSs)/reduced graphene oxide (rGO) composites have been synthesized via a scalable hydrothermal-solvothermal method with a subsequent calcination process. Benefitting from unique structure design, TiO2 NSs@rGO exhibits a superior cycle stability (90 mAh g‑1 after 10 000 cycles at a high current rate of 20 C) and satisfactory rate performance (97.3 mAh g‑1 at 25 C). To our knowledge, such ultra long cycle life has not previously been reported.

  15. Adoption of nitrogen power conversion system for small scale ultra-long cycle fast reactor eliminating intermediate sodium loop

    International Nuclear Information System (INIS)

    Seo, Seok Bin; Seo, Han; Bang, In Cheol

    2016-01-01

    Highlights: • N 2 power conversion system for both safety and thermal performance aspects. • Sensitivity studies of several controlled parameters on N 2 power conversion system. • The elimination of the intermediate loop increased the cycle thermal efficiency. • The elimination of the intermediate loop expects economic advantages. - Abstract: As one of SFRs, the ultra-long cycle fast reactor with a power rating of 100 MW e (UCFR-100) was introduced for a 60-year operation. As an alternative to the traditional steam Rankine cycle for the power conversion system, gas based Brayton cycle has been considered for UCFR-100. Among Supercritical CO 2 (S-CO 2 ), Helium (He), Nitrogen (N 2 ) as candidates for the power conversion system for UCFR-100, an N 2 power conversion system was chosen considering both safety and thermal performance aspects. The elimination of the intermediate sodium loop could be achieved due to the safety and stable characteristics of nitrogen working fluid. In this paper, sensitivity studies with respect to several controlled parameters on N 2 power conversion system were performed to optimize the system. Furthermore, the elimination of the intermediate loop was evaluated with respect to its impact on the thermodynamic performance and other aspects.

  16. Sleep and sleepiness during an ultra long-range flight operation between the Middle East and United States.

    Science.gov (United States)

    Holmes, Alexandra; Al-Bayat, Soha; Hilditch, Cassie; Bourgeois-Bougrine, Samira

    2012-03-01

    This study provides a practical example of fatigue risk management in aviation. The sleep and sleepiness of 44 pilots (11 trips × 4 pilot crew) working an ultra long-range (ULR; flight time >16 h) round-trip operation between Doha and Houston was assessed. Sleep was assessed using activity monitors and self-reported sleep diaries. Mean Karolinska Sleepiness Scores (KSS) for climb and descent did not exceed 5 ("neither alert nor sleepy"). Mean daily sleep duration was maintained above 6.3h throughout the operation. During in-flight rest periods, 98% of pilots obtained sleep and sleepiness was subsequently reduced. On layover (49.5h) crew were advised to sleep on Doha or Universal Co-ordinated Time (UTC), but 64% slept during the local (social) night time. Pilots originating from regions with a siesta culture were more likely to nap and made particularly effective use of their daytime in-flight rest periods. The results indicate that the operation is well designed from a fatigue management perspective. Copyright © 2011 Elsevier Ltd. All rights reserved.

  17. Magnetic and superconducting nanowires

    DEFF Research Database (Denmark)

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  18. Vertical nanowire architectures

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfl-Tempfli, M.; Piraux, L.

    2010-01-01

    Nanowires and statistics: A statistical process for reading ultradense arrays of nanostructured materials is presented (see image). The experimental realization is achieved through selective nanowire growth using porous alumina templates. The statistical patterning approach is found to provide ri...

  19. On compensation in Si-doped AlN

    Science.gov (United States)

    Harris, Joshua S.; Baker, Jonathon N.; Gaddy, Benjamin E.; Bryan, Isaac; Bryan, Zachary; Mirrielees, Kelsey J.; Reddy, Pramod; Collazo, Ramón; Sitar, Zlatko; Irving, Douglas L.

    2018-04-01

    Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich AlGaN, is critical to realizing next-generation applications in high-power electronics and deep UV light sources. Silicon is not a hydrogenic donor in AlN as it is in GaN; despite this, the carrier concentration should be controllable, albeit less efficiently, by increasing the donor concentration during growth. At low doping levels, an increase in the Si content leads to a commensurate increase in free electrons. Problematically, this trend does not persist to higher doping levels. In fact, a further increase in the Si concentration leads to a decrease in free electron concentration; this is commonly referred to as the compensation knee. While the nature of this decrease has been attributed to a variety of compensating defects, the mechanism and identity of the predominant defects associated with the knee have not been conclusively determined. Density functional theory calculations using hybrid exchange-correlation functionals have identified VAl+n SiAl complexes as central to mechanistically understanding compensation in the high Si limit in AlN, while secondary impurities and vacancies tend to dominate compensation in the low Si limit. The formation energies and optical signatures of these defects in AlN are calculated and utilized in a grand canonical charge balance solver to identify carrier concentrations as a function of Si content. The results were found to qualitatively reproduce the experimentally observed compensation knee. Furthermore, these calculations predict a shift in the optical emissions present in the high and low doping limits, which is confirmed with detailed photoluminescence measurements.

  20. Hall effect thruster with an AlN chamber

    International Nuclear Information System (INIS)

    Barral, S.; Jayet, Y.; Mazouffre, S.; Veron, E.; Echegut, P.; Dudeck, M.

    2005-01-01

    The plasma discharge of a Hall-effect thruster (SPT) is strongly depending of the plasma-insulated wall interactions. These interactions are mainly related to the energy deposition, potential sheath effect and electron secondary emission rate (e.s.e.). In usual SPT, the annular channel is made of BN-SiO 2 . The SPT100-ML (laboratory model will be tested with an AlN chamber in the French test facility Pivoine in the laboratoire d'Aerothermique (Orleans-France). The different parameters such as discharge current, thrust, plasma oscillations and wall temperature will studied for several operating conditions. The results will be compared with a fluid model developed in IPPT (Warsaw-Poland) taking into account electron emission from the internal and external walls and using previous experimental measurements of e.s.e. for AlN from ONERA (Toulouse-France). The surface state of AlN will be analysed before and after experiments by an Environmental Scanning Electron Microscope and by a Strength Electron Microscope. (author)

  1. Berkovich Nanoindentation on AlN Thin Films

    Directory of Open Access Journals (Sweden)

    Jian Sheng-Rui

    2010-01-01

    Full Text Available Abstract Berkovich nanoindentation-induced mechanical deformation mechanisms of AlN thin films have been investigated by using atomic force microscopy (AFM and cross-sectional transmission electron microscopy (XTEM techniques. AlN thin films are deposited on the metal-organic chemical-vapor deposition (MOCVD derived Si-doped (2 × 1017 cm−3 GaN template by using the helicon sputtering system. The XTEM samples were prepared by means of focused ion beam (FIB milling to accurately position the cross-section of the nanoindented area. The hardness and Young’s modulus of AlN thin films were measured by a Berkovich nanoindenter operated with the continuous contact stiffness measurements (CSM option. The obtained values of the hardness and Young’s modulus are 22 and 332 GPa, respectively. The XTEM images taken in the vicinity regions just underneath the indenter tip revealed that the multiple “pop-ins” observed in the load–displacement curve during loading are due primarily to the activities of dislocation nucleation and propagation. The absence of discontinuities in the unloading segments of load–displacement curve suggests that no pressure-induced phase transition was involved. Results obtained in this study may also have technological implications for estimating possible mechanical damages induced by the fabrication processes of making the AlN-based devices.

  2. High-quality AlN films grown on chemical vapor-deposited graphene films

    Directory of Open Access Journals (Sweden)

    Chen Bin-Hao

    2016-01-01

    Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

  3. Cobalt nanoparticles deposited and embedded in AlN: Magnetic, magneto-optical, and morphological properties

    International Nuclear Information System (INIS)

    Huttel, Y.; Gomez, H.; Clavero, C.; Cebollada, A.; Armelles, G.; Navarro, E.; Ciria, M.; Benito, L.; Arnaudas, J.I.; Kellock, A.J.

    2004-01-01

    We present a structural, morphological, magnetic, and magneto-optical study of cobalt nanoparticles deposited on 50 A ring AlN/c-sapphire substrates and embedded in an AlN matrix. The dependence of the properties of Co nanoclusters deposited on AlN with growth temperature and amount of deposited Co are studied and discussed. Also we directly compare the properties of as grown and AlN embedded Co nanoclusters and show that the AlN matrix has a strong impact on their magnetic and magneto-optical properties

  4. Epitaxial growth of AlN on single crystal Mo substrates

    International Nuclear Information System (INIS)

    Okamoto, Koichiro; Inoue, Shigeru; Nakano, Takayuki; Kim, Tae-Won; Oshima, Masaharu; Fujioka, Hiroshi

    2008-01-01

    We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30 o rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices

  5. Epitaxial growth of AlN on single crystal Mo substrates

    Energy Technology Data Exchange (ETDEWEB)

    Okamoto, Koichiro; Inoue, Shigeru [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Nakano, Takayuki; Kim, Tae-Won [Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656 (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST) KSP east 301, 3-2-1 Sakado, Takatsu-ku, Kawasaki, Kanagawa, 213-0012 (Japan)], E-mail: hfujioka@iis.u-tokyo.ac.jp

    2008-06-02

    We have grown AlN films on single-crystalline Mo(110), (100), and (111) substrates using a low temperature pulsed laser deposition (PLD) growth technique and investigated their structural properties. Although c-axis oriented AlN films grow on Mo(100), the films contain 30{sup o} rotated domains due to the difference in the rotational symmetry between AlN(0001) and Mo(100). AlN films with only poor crystalline quality grow on Mo(111) substrates, probably due to the poor surface morphology and high reactivity of the substrates. On the other hand, single crystal AlN films grow epitaxially on Mo(110) substrates with an in-plane relationship of AlN[11-20] // Mo[001]. Reflection high-energy electron diffraction or electron backscattered diffraction analysis has revealed that neither in-plane 30 deg. rotated domains nor cubic phase domains exist in the AlN films. X-ray reflectivity measurements have revealed that the heterointerface between AlN and Mo prepared by PLD at 450 deg. C is quite abrupt. These results indicate that PLD epitaxial growth of AlN on single crystal Mo substrates is quite promising for the fabrication of future high frequency filter devices.

  6. Degludec, a new ultra-long-acting basal insulin for the treatment of diabetes mellitus type 1 and 2: advances in clinical research.

    Science.gov (United States)

    Muñoz Torres, Manuel

    2014-03-01

    Degludec is the most recent molecule of the ultra-long-acting basal insulin analogues approved for human use. It forms soluble multihexamers which after subcutaneous injection are converted into monomers, and are thus slowly and continuously absorbed into the bloodstream. This absorption mechanism confers degludec an ultra-long and stable action profile, with no concentration peaks. This paper discusses the most recent studies in patients with type 1 and 2 diabetes mellitus, which showed degludec to be non inferior in decreasing HbA1c, ensuring optimum glycemic control similar to that achieved with insulin glargine or detemir. Degludec also had an improved safety profile, as it was associated to a significantly lower rate of nocturnal hypoglycemia in both types of diabetes and to a potentially lower overall hypoglycemia rate in type 2 DM. Degludec also opens the possibility to use more flexible regimens. Copyright © 2013 SEEN. Published by Elsevier Espana. All rights reserved.

  7. Ultra-long-term human salt balance studies reveal interrelations between sodium, potassium, and chloride intake and excretion.

    Science.gov (United States)

    Birukov, Anna; Rakova, Natalia; Lerchl, Kathrin; Engberink, Rik Hg Olde; Johannes, Bernd; Wabel, Peter; Moissl, Ulrich; Rauh, Manfred; Luft, Friedrich C; Titze, Jens

    2016-07-01

    The intake of sodium, chloride, and potassium is considered important to healthy nutrition and cardiovascular disease risk. Estimating the intake of these electrolytes is difficult and usually predicated on urine collections, commonly for 24 h, which are considered the gold standard. We reported on data earlier for sodium but not for potassium or chloride. We were able to test the value of 24-h urine collections in a unique, ultra-long-term balance study conducted during a simulated trip to Mars. Four healthy men were observed while ingesting 12 g salt/d, 9 g salt/d, and 6 g salt/d, while their potassium intake was maintained at 4 g/d for 105 d. Six healthy men were studied while ingesting 12 g salt/d, 9 g salt/d, and 6 g salt/d, with a re-exposure of 12 g/d, while their potassium intake was maintained at 4 g/d for 205 d. Food intake and other constituents were recorded every day for each subject. All urine output was collected daily. Long-term urine recovery rates for all 3 electrolytes were very high. Rather than the expected constant daily excretion related to daily intake, we observed remarkable daily variation in excretion, with a 7-d infradian rhythm at a relatively constant intake. We monitored 24-h aldosterone excretion in these studies and found that aldosterone appeared to be the regulator for all 3 electrolytes. We report Bland-Altman analyses on the value of urine collections to estimate intake. A single 24-h urine collection cannot predict sodium, potassium, or chloride intake; thus, multiple collections are necessary. This information is important when assessing electrolyte intake in individuals. © 2016 American Society for Nutrition.

  8. In-flight sleep, pilot fatigue and Psychomotor Vigilance Task performance on ultra-long range versus long range flights.

    Science.gov (United States)

    Gander, Philippa H; Signal, T Leigh; van den Berg, Margo J; Mulrine, Hannah M; Jay, Sarah M; Jim Mangie, Captain

    2013-12-01

    This study evaluated whether pilot fatigue was greater on ultra-long range (ULR) trips (flights >16 h on 10% of trips in a 90-day period) than on long range (LR) trips. The within-subjects design controlled for crew complement, pattern of in-flight breaks, flight direction and departure time. Thirty male Captains (mean age = 54.5 years) and 40 male First officers (mean age = 48.0 years) were monitored on commercial passenger flights (Boeing 777 aircraft). Sleep was monitored (actigraphy, duty/sleep diaries) from 3 days before the first study trip to 3 days after the second study trip. Karolinska Sleepiness Scale, Samn-Perelli fatigue ratings and a 5-min Psychomotor Vigilance Task were completed before, during and after every flight. Total sleep in the 24 h before outbound flights and before inbound flights after 2-day layovers was comparable for ULR and LR flights. All pilots slept on all flights. For each additional hour of flight time, they obtained an estimated additional 12.3 min of sleep. Estimated mean total sleep was longer on ULR flights (3 h 53 min) than LR flights (3 h 15 min; P(F) = 0.0004). Sleepiness ratings were lower and mean reaction speed was faster at the end of ULR flights. Findings suggest that additional in-flight sleep mitigated fatigue effectively on longer flights. Further research is needed to clarify the contributions to fatigue of in-flight sleep versus time awake at top of descent. The study design was limited to eastward outbound flights with two Captains and two First Officers. Caution must be exercised when extrapolating to different operations. © 2013 European Sleep Research Society.

  9. Ultra-long-acting insulin degludec has a flat and stable glucose-lowering effect in type 2 diabetes.

    Science.gov (United States)

    Heise, T; Nosek, L; Bøttcher, S G; Hastrup, H; Haahr, H

    2012-10-01

    Insulin degludec (IDeg) is a new-generation, ultra-long-acting basal insulin that forms soluble multihexamers upon subcutaneous injection, resulting in a depot from which IDeg is absorbed slowly and continuously into circulation. This double-blind, two-period, incomplete block cross-over trial investigated the pharmacodynamic and pharmacokinetic properties of IDeg at steady state (SS) in people with type 2 diabetes. Forty-nine subjects treated with insulin without concomitant oral anti-diabetic drugs were given IDeg (0.4, 0.6 and/or 0.8 U/kg) once daily for two 6-day periods, separated by an interval of 13-21 days. Following dosing on Day 6, subjects underwent a 26-h euglycaemic glucose clamp (Biostator®; clamp blood glucose level: 90 mg/dl; 5.0 mmol/l). Pharmacokinetic samples were taken until 120 h after last dosing. For all dose levels, the mean glucose infusion rate (GIR) profiles were flat and stable. The glucose-lowering effect of IDeg was evenly distributed over the dosing interval τ, with area under the curve (AUC) for each of the four 6-h intervals being approximately 25% of the total AUC (AUC(GIR) (,τ,) (SS) ). Total glucose-lowering effect increased linearly with increasing dose. The blood glucose levels of all subjects stayed very close to the clamp target until end of clamp. The terminal half-life of IDeg was approximately 25 h at steady state. IDeg was well tolerated and no safety concerns were identified. No injection site reactions were reported. IDeg has a flat and consistent glucose-lowering effect in people with type 2 diabetes. © 2012 Blackwell Publishing Ltd.

  10. Cr-doped Ge2Sb2Te5 for ultra-long data retention phase change memory

    International Nuclear Information System (INIS)

    Wang, Qing; Xia, Yangyang; Zheng, Yonghui; Zhang, Qi; Liu, Bo; Song, Sannian; Cheng, Yan; Song, Zhitang; Feng, Songlin; Huo, Ruru

    2015-01-01

    Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge 2 Sb 2 Te 5 (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr 10 (Ge 2 Sb 2 Te 5 ) 90 (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention

  11. Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

    Directory of Open Access Journals (Sweden)

    Songrui Zhao

    2017-09-01

    Full Text Available p-Type doping represents a key step towards III-nitride (InN, GaN, AlN optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed.

  12. Fabrication of multilayer nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

    2016-05-06

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  13. Fabrication of multilayer nanowires

    International Nuclear Information System (INIS)

    Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2016-01-01

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  14. Nanowire Growth for Photovoltaics

    DEFF Research Database (Denmark)

    Holm, Jeppe Vilstrup

    Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...

  15. Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111)

    Energy Technology Data Exchange (ETDEWEB)

    Tsipas, P.; Kassavetis, S.; Tsoutsou, D.; Xenogiannopoulou, E.; Golias, E.; Giamini, S. A.; Dimoulas, A. [National Center for Scientific Research “Demokritos,” 15310 Athens (Greece); Grazianetti, C.; Fanciulli, M. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, I-20126, Milano (Italy); Chiappe, D.; Molle, A. [Laboratorio MDM, IMM-CNR, I-20864, Agrate Brianza (MB) (Italy)

    2013-12-16

    Ultrathin (sub-monolayer to 12 monolayers) AlN nanosheets are grown epitaxially by plasma assisted molecular beam epitaxy on Ag(111) single crystals. Electron diffraction and scanning tunneling microscopy provide evidence that AlN on Ag adopts a graphite-like hexagonal structure with a larger lattice constant compared to bulk-like wurtzite AlN. This claim is further supported by ultraviolet photoelectron spectroscopy indicating a reduced energy bandgap as expected for hexagonal AlN.

  16. Magnetic tunnel junctions with AlN and AlNxOy barriers

    International Nuclear Information System (INIS)

    Schwickert, M. M.; Childress, J. R.; Fontana, R. E.; Kellock, A. J.; Rice, P. M.; Ho, M. K.; Thompson, T. J.; Gurney, B. A.

    2001-01-01

    Nonoxide tunnel barriers such as AlN are of interest for magnetic tunnel junctions to avoid the oxidation of the magnetic electrodes. We have investigated the fabrication and properties of thin AlN-based barriers for use in low resistance magnetic tunnel junctions. Electronic, magnetic and structural data of tunnel valves of the form Ta (100 Aa)/PtMn (300 Aa)/CoFe 20 (20 Aa - 25 Aa)/barrier/CoFe 20 (10 - 20 Aa)/NiFe 16 (35 - 40 Aa)/Ta (100 Aa) are presented, where the barrier consists of AlN, AlN x O y or AlN/AlO x with total thicknesses between 8 and 15 Aa. The tunnel junctions were sputter deposited and then lithographically patterned down to 2 x 2μm 2 devices. AlN was deposited by reactive sputtering from an Al target with 20% - 35% N 2 in the Ar sputter gas at room temperature, resulting in stoichiometric growth of AlN x (x=0.50±0.05), as determined by RBS. TEM analysis shows that the as-deposited AlN barrier is crystalline. For AlN barriers and AlN followed by natural O 2 oxidation, we obtain tunnel magnetoresistance >10% with specific junction resistance R j down to 60Ωμm 2 . [copyright] 2001 American Institute of Physics

  17. Enhancement of c-axis texture of AlN films by substrate implantation

    International Nuclear Information System (INIS)

    Chen, C.H.; Yeh, J.M.; Hwang, J.

    2005-01-01

    Highly oriented AlN films are successfully deposited on B + implanted Si(1 1 1) substrates in a radio frequency inductively coupled plasma (RF/ICP) system. The implanted energy and dose used for the B + implanted Si(1 1 1) substrates are 200 keV and 10 15 cm -2 , respectively. The c-axis texture of AlN films can be affected by RF gun power and ion implantation. Experimental results show that the full width at half-maximum (FWHM) of AlN(0 0 2) in the X-ray rocking curve measurements decreases with increasing RF gun power. The optimum condition is at 500 W, where the FWHM of the AlN films deposited on Si(1 1 1) with and without B + implantation are 2.77 and 3.17, respectively. In average, the FWHM of the AlN films on B + implanted Si(1 1 1) are less than those on Si(1 1 1) by a factor of ∼10%. The enhancement of c-axis of AlN films due to B + implantation is attributed to the reduction of AlN grains. Raman spectra also suggest that ion implantation plays a role in reducing the tensile stress in AlN films deposited on B + implanted Si(1 1 1)

  18. Effects of AlN Coating Layer on High Temperature Characteristics of Langasite SAW Sensors

    Directory of Open Access Journals (Sweden)

    Lin Shu

    2016-09-01

    Full Text Available High temperature characteristics of langasite surface acoustic wave (SAW devices coated with an AlN thin film have been investigated in this work. The AlN films were deposited on the prepared SAW devices by mid-frequency magnetron sputtering. The SAW devices coated with AlN films were measured from room temperature to 600 °C. The results show that the SAW devices can work up to 600 °C. The AlN coating layer can protect and improve the performance of the SAW devices at high temperature. The SAW velocity increases with increasing AlN coating layer thickness. The temperature coefficients of frequency (TCF of the prepared SAW devices decrease with increasing thickness of AlN coating layers, while the electromechanical coupling coefficient (K2 of the SAW devices increases with increasing AlN film thickness. The K2 of the SAW devices increases by about 20% from room temperature to 600 °C. The results suggest that AlN coating layer can not only protect the SAW devices from environmental contamination, but also improve the K2 of the SAW devices.

  19. Clinical pharmacokinetics of AZD3199, an inhaled ultra-long-acting β2-adrenoreceptor agonist (uLABA

    Directory of Open Access Journals (Sweden)

    Bjermer L

    2015-02-01

    Full Text Available Leif Bjermer,1 Piotr Kuna,2 Carin Jorup,3 Thomas Bengtsson,4 Johan Rosenborg4 1Department of Respiratory Medicine and Allergology, University Hospital, Lund, Sweden; 2Department of Internal Medicine, Asthma and Allergy, Barlicki University Hospital, Medical University of Lodz, Lodz, Poland; 3AstraZeneca R&D, Mölndal, Sweden; 4StatMind, Lund, Sweden Objective: The clinical pharmacokinetics of AZD3199, an ultra-long-acting β2-agonist, were investigated in healthy volunteers and patients with asthma or chronic obstructive pulmonary disease (COPD. Materials and methods: Five studies are presented: one single ascending dose study in healthy Caucasian males; two multiple ascending dose studies in healthy males, one in Caucasians and one in Japanese; a Phase IIA asthma study; and a Phase IIB COPD study. Subjects received AZD3199 via a Spira nebulizer (Turbuhaler; equivalent delivered doses 5–3200 µg or Turbuhaler (single delivered doses of 120–1920 µg or repeated delivered once-daily doses 240–1,680 µg. AZD3199 pharmacokinetics were assessed using total plasma concentration and urinary excretion, and tolerability using adverse events, clinical laboratory tests, and physical examinations. Results: AZD3199 appeared rapidly in the systemic circulation following single and multiple dosing in healthy volunteers and patients (maximum plasma concentration within 30 minutes, with dose-proportional time-independent pharmacokinetics. Plasma exposure to unmetabolized drug was similar in healthy volunteers and patients with asthma, but relatively lower in patients with COPD. Estimated terminal half-life was up to 142 hours in healthy Caucasian males. AZD3199 was well tolerated and showed no or at most mild systemic effects. Conclusion: AZD3199 plasma exposure in healthy volunteers and patients suggested linear pharmacokinetics and a long half-life. Systemic availability was similar in healthy subjects and patients with asthma, but was lower in patients

  20. From nanodiamond to nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, A.; Materials Science Division

    2005-01-01

    Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

  1. Growth of AlN films and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Jain, Rakesh B.; Gao, Ying; Zhang, Jianping; Qhaleed Fareed, R.S.; Gaska, Remis [Sensor Electronic Technology, Inc., 1195 Atlas Rd., Columbia, SC 29209 (United States); Li, Jiawei; Arjunan, Arulchakkravarthi; Yang, Jinwei; Asif Khan, M. [Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208 (United States); Kuokstis, Edmundas [MTMI, Vilnius University, Vilnius (Lithuania)

    2006-06-15

    Single crystal AlN layers have been produced by migration enhanced metal organic chemical vapor deposition (MEMOCVD), hydride vapor phase epitaxy (HVPE) and their combination. The growth was carried out on 2'' basal plane sapphire substrates. In MEMOCVD, the duration and waveforms of precursors were varied to achieve better surface mobility and thus better atomic incorporation. It resulted in superior layer quality templates with the narrowest (002) X-ray rocking curve full width half maximum (FWHM). Such high quality AlN templates were used as seeds for subsequent HVPE growth. Thick films with thickness ranging from 1-25 {mu}m have been grown by HVPE with growth rates as high as 200 {mu}m/min, highest ever reported. Films grown by the two methods have been extensively characterized by Nomarski microscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), high-resolution X-ray diffractometry (HRXRD), and photoluminescence (PL). (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Fabrication and characterization of well-aligned zinc oxide nanowire arrays and their realizations in Schottky-device applications

    Energy Technology Data Exchange (ETDEWEB)

    Wong, Kin Mun; Grote, Fabian; Sun, Hui; Lei, Yong [Institute of Materials Physics, Center for Nanotechnology, University of Muenster (Germany); Wen, Liaoyong; Fang, Yaoguo [Institute of Nanochemistry and Nanobiology, Shanghai University, Shanghai 201800 (China)

    2011-07-01

    Highly ordered arrays of vertical zinc oxide (ZnO) nanowires (NWs) or nanopores were fabricated in our group by first thermal evaporating a thin film of gold on the ultrathin alumina membrane (UTAM). The UTAM was then utilized as a substrate for the growth of the ordered arrays using a chemical vapour deposition (CVD) process. Alternatively, a modified CVD process was also used to fabricate ultra-long ZnO NWs with the length of the nanowire exceeding 100 micrometres. Subsequently, densely packed arrays of ZnO NWs Schottky diodes were synthesized by transferring the long NWs on a substrate using a dry contact printing method and the electrical contacts were made on the NWs with a photolithographic process. The interesting electrical properties of the ZnO NWs, diodes or other metal oxide NWs such as the field emission, electron transport and piezoelectric properties were characterized by current-voltage or by other appropriate measurements.

  3. Ultra-long Zn{sub 2}SnO{sub 4}-ZnO microwires based gas sensor for hydrogen detection

    Energy Technology Data Exchange (ETDEWEB)

    Fan, Hong [School of Resources and Civil Engineering, Northeastern University, Shenyang 110819 (China); Xu, Shucong [School of Material Science & Engineering, Shandong University, Jinan 250061 (China); Cao, Xianmin; Liu, Daoxi; Yin, Yaoyu; Hao, Haiyong; Wei, Dezhou [School of Resources and Civil Engineering, Northeastern University, Shenyang 110819 (China); Shen, Yanbai, E-mail: shenyanbai@mail.neu.edu.cn [School of Resources and Civil Engineering, Northeastern University, Shenyang 110819 (China)

    2017-04-01

    Highlights: • Ultra-long Zn{sub 2}SnO{sub 4}-ZnO microwires with excellent crystallinity and high yield were obtained. • The maximal length-to-diameter ratio of Zn{sub 2}SnO{sub 4}-ZnO microwires is approximately 1500. • Ultra-long Zn{sub 2}SnO{sub 4}-ZnO microwires show outstanding H{sub 2} sensing properties. - Abstract: Ultra-long Zn{sub 2}SnO{sub 4}-ZnO microwires were synthesized by thermal evaporation of the mixture of SnO{sub 2}, ZnO and C powders. Microstructural characterization by means of X-ray diffraction, scanning electron microscopy and energy dispersive X-ray spectroscopy showed that Zn{sub 2}SnO{sub 4}-ZnO microwires with excellent crystallinity were 2.8–3.2 μm in diameter and 4.0–4.2 mm in length. The maximal length-to-diameter ratio of Zn{sub 2}SnO{sub 4}-ZnO microwires is approximately 1500. H{sub 2} sensing properties showed that Zn{sub 2}SnO{sub 4}-ZnO microwires exhibited not only excellent reversibility to H{sub 2}, but also a good linear relationship between the sensor response and H{sub 2} concentration. The response time and recovery time decreased as the operating temperature increased. The highest sensor response of 9.6 to 1000 ppm H{sub 2} was achieved at an operating temperature of 300 °C. The electron depletion theory was used for explaining H{sub 2} sensing mechanism by the chemical adsorption and reaction of H{sub 2} molecules on the surface of Zn{sub 2}SnO{sub 4}-ZnO microwires.

  4. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

    2012-01-01

    Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

  5. Adsorption properties of AlN on Si(111) surface: A density functional study

    Science.gov (United States)

    Yuan, Yinmei; Zuo, Ran; Mao, Keke; Tang, Binlong; Zhang, Zhou; Liu, Jun; Zhong, Tingting

    2018-04-01

    In the process of preparing GaN on Si substrate by MOCVD, an AlN buffer layer is very important. In this study, we conducted density functional theory calculations on the adsorption of AlN molecule on Si(111)-(2 × 2) surface, with the AlN molecule located horizontally or vertically above Si(111) surface at different adsorption sites. The calculations revealed that the lowest adsorption energy was at the N-top-Al-bridge site in the horizontal configuration, with the narrowest band gap, indicating that it was the most preferential adsorption growth status of AlN. In the vertical configurations, N adatom was more reactive and convenient to form bonds with the topmost Si atoms than Al adatom. When the N-end of the AlN molecule was located downward, the hollow site was the preferred adsorption site; when the Al-end was located downward, the bridge site was the most energetically favorable. Moreover, we investigated some electronic properties such as partial density of states, electron density difference, Mulliken populations, etc., revealing the microscale mechanism for AlN adsorption on Si(111) surface and providing theoretical support for adjusting the processing parameters during AlN or GaN production.

  6. Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

    Science.gov (United States)

    Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

    2017-06-01

    Using metalorganic vapor phase epitaxy, methods were developed to achieve AlN films on sapphire with low etch pit density (EPD). Key to this achievement was using the same AlN growth recipe and only varying the pre-growth conditioning of the quartz-ware. After AlN growth, the quartz-ware was removed from the growth chamber and either exposed to room air or moved into the N2 purged glove box and exposed to H2O vapor. After the quartz-ware was exposed to room air or H2O, the AlN film growth was found to be more reproducible, resulting in films with (0002) and (10-12) x-ray diffraction (XRD) rocking curve linewidths of 200 and 500 arc sec, respectively, and EPDs < 100 cm-2. The EPD was found to correlate with (0002) linewidths, suggesting that the etch pits are associated with open core screw dislocations similar to GaN films. Once reproducible AlN conditions were established using the H2O pre-treatment, it was found that even small doses of trimethylaluminum (TMAl)/NH3 on the quartz-ware surfaces generated AlN films with higher EPDs. The presence of these residual TMAl/NH3-derived coatings in metalorganic vapor phase epitaxy (MOVPE) systems and their impact on the sapphire surface during heating might explain why reproducible growth of AlN on sapphire is difficult.

  7. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  8. Enhancing the piezoelectric properties of flexible hybrid AlN materials using semi-crystalline parylene

    Science.gov (United States)

    Jackson, Nathan; Mathewson, Alan

    2017-04-01

    Flexible piezoelectric materials are desired for numerous applications including biomedical, wearable, and flexible electronics. However, most flexible piezoelectric materials are not compatible with CMOS fabrication technology, which is desired for most MEMS applications. This paper reports on the development of a hybrid flexible piezoelectric material consisting of aluminium nitride (AlN) and a semi-crystalline polymer substrate. Various types of semi-crystalline parylene and polyimide materials were investigated as the polymer substrate. The crystallinity and surfaces of the polymer substrates were modified by micro-roughening and annealing in order to determine the effects on the AlN quality. The AlN crystallinity and piezoelectric properties decreased when the polymer surfaces were treated with O2 plasma. However, increasing the crystallinity of the parylene substrate prior to deposition of AlN caused enhanced c-axis (002) AlN crystallinity and piezoelectric response of the AlN. Piezoelectric properties of 200 °C annealed parylene-N substrate resulted in an AlN d 33 value of 4.87 pm V-1 compared to 2.17 pm V-1 for AlN on polyimide and 4.0 pm V-1 for unannealed AlN/parylene-N. The electrical response measurements to an applied force demonstrated that the parylene/AlN hybrid material had higher V pp (0.918 V) than commercial flexible piezoelectric material (PVDF) (V pp 0.36 V). The results in this paper demonstrate that the piezoelectric properties of a flexible AlN hybrid material can be enhanced by increasing the crystallinity of the polymer substrate, and the enhanced properties can function better than previous flexible piezoelectrics.

  9. Production of AlN films: ion nitriding versus PVD coating

    International Nuclear Information System (INIS)

    Figueroa, U.; Salas, O.; Oseguera, J.

    2004-01-01

    The properties of AlN render this material very attractive for optical, electronic, and tribological applications; thus, a great interest exists for the production of thin AlN films on a variety of substrates. Many methods have been developed for this purpose where two processes stand out: plasma-assisted nitriding (PAN) and PVD coating. In the present paper, we compare the processing advantages and disadvantages of both methods in terms of the characteristics of the layers formed. AlN production by ion nitriding is very sensitive to presputtering cleaning and working pressure. Layers several micrometers thick can be produced in a few hours, which are formed by a fine mixture of Al+AlN. The surface morphology of the layers is rather rough. On the other hand, formation of PVD AlN coatings by DC reactive magnetron sputtering is more readily performed and better controlled than in ion nitriding. PVD results in macroscopically smoother AlN films and with similar thickness than the ion nitrided layers but produced in shorter processing times. The morphology of the PVD AlN layers is columnar with a fairly flat surface. Mechanisms for the formation of both types of AlN layers are proposed. One of the main differences between the two processes that explain the different AlN layer morphologies is the energy of the particles that arrive at the substrate. Considering only the processing advantages and the morphology of the AlN layers formed, PVD performs better than PAN processing

  10. Understanding the growth of micro and nano-crystalline AlN by thermal plasma process

    Science.gov (United States)

    Kanhe, Nilesh S.; Nawale, Ashok B.; Gawade, Rupesh L.; Puranik, Vedavati G.; Bhoraskar, Sudha V.; Das, Asoka K.; Mathe, Vikas L.

    2012-01-01

    We report the studies related to the growth of crystalline AlN in a DC thermal plasma reactor, operated by a transferred arc plasma torch. The reactor is capable of producing the nanoparticles of Al and AlN depending on the composition of the reacting gas. Al and AlN micro crystals are formed at the anode placed on the graphite and nano crystalline Al and AlN gets deposited on the inner surface of the plasma reactor. X-ray diffraction, Raman spectroscopy analysis, single crystal X-ray diffraction and TGA-DTA techniques are used to infer the purity of post process crystals as a hexagonal AlN. The average particle size using SEM was found to be around 30 μm. The morphology of nanoparticles of Al and AlN, nucleated by gas phase condensation in a homogeneous medium were studied by transmission electron microscopy analysis. The particle ranged in size between 15 and 80 nm in diameter. The possible growth mechanism of crystalline AlN at the anode has been explained on the basis of non-equilibrium processes in the core of the plasma and steep temperature gradient near its periphery. The gas phase species of AlN and various constituent were computed using Murphy code based on minimization of free energy. The process provides 50% yield of microcrystalline AlN and remaining of Al at anode and that of nanocrystalline h-AlN and c-Al collected from the walls of the chamber is about 33% and 67%, respectively.

  11. Nanowire Photovoltaic Devices

    Science.gov (United States)

    Forbes, David

    2015-01-01

    Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

  12. Functionalised Silver Nanowire Structures

    International Nuclear Information System (INIS)

    Andrew, Piers; Ilie, Adelina

    2007-01-01

    Crystalline silver nanowires 60-100 nm in diameter and tens of micrometres in length have been fabricated using a low temperature, solution synthesis technique. We explore the potential of this method to produce functional nanowire structures using two different strategies to attach active molecules to the nanowires: adsorption and displacement. Initially, as-produced silver nanowires capped with a uniaxial-growth-inducing polymer layer were functionalised by solution adsorption of a semiconducting conjugated polymer to generate fluorescent nanowire structures. The influence of nanowire surface chemistry was investigated by displacing the capping polymer with an alkanethiol self-assembled monolayer, followed by solution adsorption functionalisation. The success of molecular attachment was monitored by electron microscopy, absorption and fluorescence spectroscopy and confocal fluorescence microscopy. We examined how the optical properties of such adsorbed molecules are affected by the metallic nanowires, and observed transfer of excitation energy between dye molecules mediated by surface plasmons propagating on the nanowires. Non-contact dynamic force microscopy measurements were used to map the work-function of individual wires, revealing inhomogeneity of the polymer surface coverage

  13. Stability of Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, F.; Schiek, M.; Wallmann, I.

    2011-01-01

    The morphological stability of organic nanowires over time and under thermal load is of major importance for their use in any device. In this study the growth and stability of organic nanowires from a naphthyl end-capped thiophene grown by organic molecular beam deposition is investigated via ato...

  14. A flexible, robust and antifouling asymmetric membrane based on ultra-long ceramic/polymeric fibers for high-efficiency separation of oil/water emulsions.

    Science.gov (United States)

    Wang, Kui; Yiming, Wubulikasimu; Saththasivam, Jayaprakash; Liu, Zhaoyang

    2017-07-06

    Polymeric and ceramic asymmetric membranes have dominated commercial membranes for water treatment. However, polymeric membranes are prone to becoming fouled, while ceramic membranes are mechanically fragile. Here, we report a novel concept to develop asymmetric membranes based on ultra-long ceramic/polymeric fibers, with the combined merits of good mechanical stability, excellent fouling resistance and high oil/water selectivity, in order to meet the stringent requirements for practical oil/water separation. The ultra-long dimensions of ceramic nanofibers/polymeric microfibers endow this novel membrane with mechanical flexibility and robustness, due to the integrated and intertwined structure. This membrane is capable of separating oil/water emulsions with high oil-separation efficiency (99.9%), thanks to its nanoporous selective layer made of ceramic nanofibers. Further, this membrane also displays superior antifouling properties due to its underwater superoleophobicity and ultra-low oil adhesion of the ceramic-based selective layer. This membrane exhibits high water permeation flux (6.8 × 10 4 L m -2 h -1 bar -1 ) at low operation pressures, which is attributed to its 3-dimensional (3D) interconnected fiber-based structure throughout the membrane. In addition, the facile fabrication process and inexpensive materials required for this membrane suggest its significant potential for industrial applications.

  15. Comparative study of initial growth stage in PVT growth of AlN on SiC and on native AlN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Epelbaum, B.M.; Heimann, P.; Bickermann, M.; Winnacker, A. [Department of Materials Science 6, University of Erlangen-Nuernberg, Martensstr. 7, 91058 Erlangen (Germany)

    2005-05-01

    The main issue in homoepitaxial growth of aluminum nitride (AlN) on native seed substrates appears to be aluminum oxynitride poisoning of seed surface leading to polycrystalline growth at 1750-1850 C. This is well below the lowest growth temperature appropriate for physical vapor transport (PVT) of bulk AlN, which is about 2150 C. Contrary, heteroepitaxial growth of AlN on SiC is relatively easy to achieve because of natural formation of a thin molten layer on the seed surface and VLS growth of AlN via the molten buffer layer. The most critical issue of AlN growth on SiC is cracking of the grown layer upon cooling as a result of different thermal expansion. Optimization of seeded growth process can be achieved by proper choice of SiC seed orientation and by use of ultra-pure starting material. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. AlN nanoparticle-reinforced nanocrystalline Al matrix composites: Fabrication and mechanical properties

    International Nuclear Information System (INIS)

    Liu, Y.Q.; Cong, H.T.; Wang, W.; Sun, C.H.; Cheng, H.M.

    2009-01-01

    To improve the specific strength and stiffness of Al-based composites, AlN/Al nanoparticles were in-situ synthesized by arc plasma evaporation of Al in nitrogen atmosphere and consolidated by hot-pressing to fabricate AlN nanoparticle-reinforced nanocrystalline Al composites (0-39 vol.% AlN). Microstructure characterization shows that AlN nanoparticles homogeneously distribute in the matrix of Al nanocrystalline, which forms atomically bonded interfaces of AlN/Al. The hardness and the elastic modulus of the nanocomposite have been improved dramatically, up to 3.48 GPa and 142 GPa, respectively. Such improvement is believed to result from the grain refinement strengthening and the interface strengthening (load transfer) between the Al matrix and AlN nanoparticles

  17. AlN metal-semiconductor field-effect transistors using Si-ion implantation

    Science.gov (United States)

    Okumura, Hironori; Suihkonen, Sami; Lemettinen, Jori; Uedono, Akira; Zhang, Yuhao; Piedra, Daniel; Palacios, Tomás

    2018-04-01

    We report on the electrical characterization of Si-ion implanted AlN layers and the first demonstration of metal-semiconductor field-effect transistors (MESFETs) with an ion-implanted AlN channel. The ion-implanted AlN layers with Si dose of 5 × 1014 cm-2 exhibit n-type characteristics after thermal annealing at 1230 °C. The ion-implanted AlN MESFETs provide good drain current saturation and stable pinch-off operation even at 250 °C. The off-state breakdown voltage is 2370 V for drain-to-gate spacing of 25 µm. These results show the great potential of AlN-channel transistors for high-temperature and high-power applications.

  18. First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/AlN heterostructures

    International Nuclear Information System (INIS)

    Ivashchenko, V.I.; Veprek, S.; Turchi, P.E.A.; Shevchenko, V.I.; Leszczynski, J.; Gorb, L.; Hill, F.

    2014-01-01

    First-principles quantum molecular dynamics investigations of TiN(001)/AlN and ZrN(001)/AlN heterostructures with one and two monolayers (1 ML and 2 ML) of AlN interfacial layers were carried out in the temperature range of 0–1400 K with subsequent static relaxation. It is shown that the epitaxially stabilized cubic B1-AlN interfacial layers are preserved in all TiN(001)/AlN heterostructures over the whole temperature range. In the ZrN(001)/AlN heterostructures, the B1-AlN(001) interfacial layer exists at 0 K, but it transforms into a distorted one at 10 K consisting of tetrahedral AlN 4 , octahedral AlN 6 , and AlN 5 units. The thermal stability of the interfaces was investigated by studying the phonon dynamic stability of the B1-AlN phase with different lattice parameters. The calculations showed that the B1-AlN interface should be unstable in ZrN(001)/AlN heterostructures and nanocomposites, and in those based on transition metal nitrides with lattice parameters larger than 4.4 Å. Electronic band structure calculations showed that energy gap forms around the Fermi energy for all interfaces. The formation of the interfacial AlN layer in TiN and ZrN crystals reduces their ideal tensile and shear strengths. Upon tensile load, decohesion occurs between Ti (Zr) and N atoms adjacent to the 1 ML AlN interfacial layer, whereas in the case of 2 ML AlN it occurs inside the TiN and ZrN slabs. The experimentally reported strength enhancement in the TiN/AlN and ZrN/AlN heterostructures is attributed to impeding effect of the interfacial layer on the plastic flow. - Highlights: • First-principles quantum molecular dynamics studies were conducted. • TiN- and ZrN-based heterostructures with one and two AlN interfacial layers. • Stability and structural transformation between 0 and 1400 K have been calculated. • Stress–strain relationships and ideal strengths determined. • Systems which may form stable superhard heterostructures are identified

  19. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-01-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest

  20. Flexible-CMOS and biocompatible piezoelectric AlN material for MEMS applications

    International Nuclear Information System (INIS)

    Jackson, Nathan; Keeney, Lynette; Mathewson, Alan

    2013-01-01

    The development of a CMOS compatible flexible piezoelectric material is desired for numerous applications and in particular for biomedical MEMS devices. Aluminum nitride (AlN) is the most commonly used CMOS compatible piezoelectric material, which is typically deposited on Si in order to enhance the c-axis (002) crystal orientation which gives AlN its high piezoelectric properties. This paper reports on the successful deposition of AlN on polyimide (PI-2611) material. The AlN deposited has a FWHM (002) value of 5.1° and a piezoelectric d 33 value of 1.12 pm V −1 , and SEM images show high quality columnar grains. The highly crystalline AlN material is due to the semi-crystalline properties of the polyimide film used. Cytotoxicity testing showed the AlN/polyimide material to be non-toxic to 3T3 cells and primary neurons. Surface properties of the AlN/polyimide film were evaluated as they have a significant effect on the adhesion of cells to the film. The results show neurons adhering to the AlN surface. The results of this paper show the characterization of a new flexible-CMOS and biocompatible AlN/polyimide material for MEMS devices with improved crystallinity and piezoelectric properties. (paper)

  1. Synthesis of c-axis oriented AlN thin films on different substrates: A review

    International Nuclear Information System (INIS)

    Iriarte, G.F.; Rodriguez, J.G.; Calle, F.

    2010-01-01

    Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N 2 gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.

  2. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  3. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  4. An ultra-long cavity passively mode-locked fiber laser based on nonlinear polarization rotation in a semiconductor optical amplifier

    International Nuclear Information System (INIS)

    Liu, Tonghui; Jia, Dongfang; Yang, Jingwen; Chen, Jiong; Wang, Zhaoying; Yang, Tianxin

    2013-01-01

    In this paper we investigate an ultra-long cavity passively mode-locked fiber laser based on a semiconductor optical amplifier (SOA). Experimental results are presented which indicate that stable mode-locked pulses can be obtained by combining nonlinear polarization rotation (NPR) in the SOA with a polarization controller. By adding a 4 km single mode fiber into the ring cavity, a stable fundamental-order mode-locked pulse train with a repetition rate of 50.72 kHz is generated through the NPR effect in the SOA. The central wavelength, 3 dB bandwidth and single pulse energy of the output pulse are 1543.95 nm, 1.506 nm and 33.12 nJ, respectively. Harmonic mode-locked pulses are also observed in experiments when the parameters are chosen properly. (paper)

  5. Improvement of the chromatic dispersion tolerance in coherent optical OFDM systems using shifted DFT windows for ultra-long-haul optical transmission systems.

    Science.gov (United States)

    Sung, Minkyu; Kim, Hoon; Lee, Jaehoon; Jeong, Jichai

    2014-09-22

    In a high-capacity ultra-long-haul optical coherent orthogonal frequency-division multiplexing (CO-OFDM) system, the dispersion tolerance is determined by the length of cyclic extension (CE). In this paper, we propose a novel scheme to substantially improve the dispersion tolerance of CO-OFDM systems without increasing the CE length. Multiple time-shifted discrete Fourier transform (DFT) windows are exploited at the receiver, each demodulating only a part of the subcarriers. Effectively, the proposed scheme reduces the bandwidth of the OFDM signals under demodulation. Numerical simulations are performed to show the improved dispersion tolerance of the proposed scheme in comparison with the conventional CO-OFDM system. We show that the dispersion tolerance improves by a factor equal to the number of DFT windows. The tradeoff between the improved dispersion tolerance and increased receiver complexity is also presented.

  6. Nanotubes and nanowires

    Indian Academy of Sciences (India)

    Unknown

    junction nanotubes by the pyrolysis of appropriate organic precursors. ... By making use of carbon nanotubes, nanowires of metals, metal ..... The use of activated carbon in place of ..... required for the complete removal of the carbon template.

  7. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  8. Mechanical characteristics of ultra-long horizontal nanocantilevers grown by real-time feedback control on focused-ion-beam chemical vapour deposition

    International Nuclear Information System (INIS)

    Guo, Dengji; Warisawa, Shin’ichi; Ishihara, Sunao; Kometani, Reo

    2015-01-01

    Focused-ion-beam chemical vapour deposition (FIB-CVD) has been repeatedly proved to be a useful tool for the growth of three-dimensional (3D) micro- and nano-structures. The strategy of real-time feedback control on FIB-CVD was previously proposed and experimentally demonstrated to be effective for growing ultra-long horizontal nanocantilevers. To fabricate various nanoelectromechanical systems that consist of such types of nanocantilever structures, the mechanical characteristics of ultra-long horizontal nanocantilevers should be investigated. In this study, nanocantilevers with an overhang length of up to 35 μm were grown by using a 30 kV Ga + FIB, a beam current of 0.50 pA and phenanthrene (C 14 H 10 ) as the gas source to deposit a diamond-like carbon structure. The Young’s modulus of each nanocantilever was measured by bending the nanocantilever with a nanopillar whose Young’s modulus was known. The average density of each nanocantilever was calculated from the Young’s modulus and the measured resonant frequency. We found that the mechanical characteristics of each nanocantilever depended on the length of the nanocantilever if the strategy of real-time feedback control was applied in fabrication. The Young’s moduli and the averaged densities of the nanocantilevers with a length of 11 to 34 μm were found to be 86 to 254 GPa and 1950 to 5750 kg m −3 , respectively. With the increase of the overhang length, the Young’s modulus and the average density were found to gradually increase. (paper)

  9. Biofunctionalized Magnetic Nanowires

    KAUST Repository

    Kosel, Jurgen

    2013-12-19

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  10. Biofunctionalized Magnetic Nanowires

    KAUST Repository

    Kosel, Jü rgen; Ravasi, Timothy; Contreras Gerenas, Maria Fernanda

    2013-01-01

    Magnetic nanowires can be used as an alternative method overcoming the limitations of current cancer treatments that lack specificity and are highly cytotoxic. Nanowires are developed so that they selectively attach to cancer cells via antibodies, potentially destroying them when a magnetic field induces their vibration. This will transmit a mechanical force to the targeted cells, which is expected to induce apoptosis on the cancer cells.

  11. First-principles study on stability, and growth strategies of small AlnZr (n=1-9) clusters

    Science.gov (United States)

    Li, Zhi; Zhou, Zhonghao; Wang, Hongbin; Li, Shengli; Zhao, Zhen

    2016-09-01

    The geometries, relative stability as well as growth strategies of the AlnZr (n=1-9) clusters are investigated with spin polarized density functional theory: BLYP. The results reveal that the AlnZr clusters are more likely to form the dense accumulation structures than the AlN (N=1-10) clusters. The average binding energies of AlnZr are higher than those of AlN clusters. The AlnZr (n=3, 5, and 7) clusters are more stable than others by the differences of the total binding energies. Mülliken population analysis for the AlnZr clusters shows that the electron's adsorption ability of Zr is slightly lower than that of Al except for AlZr cluster. Local peaks of the HOMO-LUMO gap curve are found at n=3, 5, and 7. The reaction energies of AlnZr are higher, which means that AlnZr clusters are easier to react with Al clusters. Zr atom preferential reacts with Al2 cluster. Local peaks of the magnetic dipole moments are found at n=2, 5, and 8.

  12. Nanowire structures and electrical devices

    Science.gov (United States)

    Bezryadin, Alexey; Remeika, Mikas

    2010-07-06

    The present invention provides structures and devices comprising conductive segments and conductance constricting segments of a nanowire, such as metallic, superconducting or semiconducting nanowire. The present invention provides structures and devices comprising conductive nanowire segments and conductance constricting nanowire segments having accurately selected phases including crystalline and amorphous states, compositions, morphologies and physical dimensions, including selected cross sectional dimensions, shapes and lengths along the length of a nanowire. Further, the present invention provides methods of processing nanowires capable of patterning a nanowire to form a plurality of conductance constricting segments having selected positions along the length of a nanowire, including conductance constricting segments having reduced cross sectional dimensions and conductance constricting segments comprising one or more insulating materials such as metal oxides.

  13. Surface acoustic wave devices on AlN/3C–SiC/Si multilayer structures

    International Nuclear Information System (INIS)

    Lin, Chih-Ming; Lien, Wei-Cheng; Riekkinen, Tommi; Senesky, Debbie G; Pisano, Albert P; Chen, Yung-Yu; Felmetsger, Valery V

    2013-01-01

    Surface acoustic wave (SAW) propagation characteristics in a multilayer structure including a piezoelectric aluminum nitride (AlN) thin film and an epitaxial cubic silicon carbide (3C–SiC) layer on a silicon (Si) substrate are investigated by theoretical calculation in this work. Alternating current (ac) reactive magnetron sputtering was used to deposit highly c-axis-oriented AlN thin films, showing the full width at half maximum (FWHM) of the rocking curve of 1.36° on epitaxial 3C–SiC layers on Si substrates. In addition, conventional two-port SAW devices were fabricated on the AlN/3C–SiC/Si multilayer structure and SAW propagation properties in the multilayer structure were experimentally investigated. The surface wave in the AlN/3C–SiC/Si multilayer structure exhibits a phase velocity of 5528 m s −1 and an electromechanical coupling coefficient of 0.42%. The results demonstrate the potential of AlN thin films grown on epitaxial 3C–SiC layers to create layered SAW devices with higher phase velocities and larger electromechanical coupling coefficients than SAW devices on an AlN/Si multilayer structure. Moreover, the FWHM values of rocking curves of the AlN thin film and 3C–SiC layer remained constant after annealing for 500 h at 540 °C in air atmosphere. Accordingly, the layered SAW devices based on AlN thin films and 3C–SiC layers are applicable to timing and sensing applications in harsh environments. (paper)

  14. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    Science.gov (United States)

    Sun, Haiding; Torres Castanedo, C. G.; Liu, Kaikai; Li, Kuang-Hui; Guo, Wenzhe; Lin, Ronghui; Liu, Xinwei; Li, Jingtao; Li, Xiaohang

    2017-10-01

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5-4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (-201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be -0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of -1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  15. Valence and conduction band offsets of β-Ga2O3/AlN heterojunction

    KAUST Repository

    Sun, Haiding

    2017-10-16

    Both β-Ga2O3 and wurtzite AlN have wide bandgaps of 4.5–4.9 and 6.1 eV, respectively. We calculated the in-plane lattice mismatch between the (−201) plane of β-Ga2O3 and the (0002) plane of AlN, which was found to be 2.4%. This is the smallest mismatch between β-Ga2O3 and binary III-nitrides which is beneficial for the formation of a high quality β-Ga2O3/AlN heterojunction. However, the valence and conduction band offsets (VBO and CBO) at the β-Ga2O3/AlN heterojunction have not yet been identified. In this study, a very thin (less than 2 nm) β-Ga2O3 layer was deposited on an AlN/sapphire template to form the heterojunction by pulsed laser deposition. High-resolution X-ray photoelectron spectroscopy revealed the core-level (CL) binding energies of Ga 3d and Al 2p with respect to the valence band maximum in individual β-Ga2O3 and AlN layers, respectively. The separation between Ga 3d and Al 2p CLs at the β-Ga2O3/AlN interface was also measured. Eventually, the VBO was found to be −0.55 ± 0.05 eV. Consequently, a staggered-gap (type II) heterojunction with a CBO of −1.75 ± 0.05 eV was determined. The identification of the band alignment of the β-Ga2O3/AlN heterojunction could facilitate the design of optical and electronic devices based on these and related alloys.

  16. Electronic structures, elastic properties, and minimum thermal conductivities of cermet M{sub 3}AlN

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jin [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Key Laboratory of Liquid–Solid Structural Evolution and Processing of Materials, Ministry of Education, Shandong University, Jinan 250061 (China); Chen, ZhiQian, E-mail: chen_zq@swu.edu.cn [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China); Li, ChunMei; Li, Feng; Nie, ChaoYin [Faculty of Materials and Energy, Southwest University, Chongqing 400715 (China)

    2014-08-15

    The electronic structures and elastic anisotropies of cubic Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN are investigated by pseudopotential plane-wave method based on density functional theory. At the Fermi level, the electronic structures of these compounds are successive with no energy gap between conduct and valence bands, and exhibit metallicity in ground states. In valence band of each partial density of states, the different orbital electrons indicate interaction of corresponding atoms. In addition, the anisotropy of Hf{sub 3}AlN is found to be significantly different from that of Ti{sub 3}AlN and Zr{sub 3}AlN, which involve the differences in the bonding strength. It is notable that Hf{sub 3}AlN is a desired thermal barrier material with the lowest thermal conductivity at high temperature among the three compounds. - Graphical abstract: 1.Young's moduli of anti-perovskite Ti{sub 3}AlN, Zr{sub 3}AlN, and Hf{sub 3}AlN in full space. 2.Electron density differences on crystal planes (1 0 0), (2 0 0), and (1 1 0) of anti-perovskite Zr{sub 3}AlN. - Highlights: • We calculated three anti-perovskite cermets with first-principles theory. • We illustrated 3D Young modulus and found the anomalous anisotropy. • We explained the anomaly and calculated the minimum thermal conductivities.

  17. An AlN cantilever for a wake-up switch triggered by air pressure change

    International Nuclear Information System (INIS)

    Kaiho, Y; Itoh, T; Maeda, R; Takahashi, H; Matsumoto, K; Shimoyama, I; Tomimatsu, Y; Kobayashi, T

    2013-01-01

    This research reports an AlN cantilever with an air chamber for a wake-up switch triggered by air pressure change. The proposed sensor is designed to fulfil both high sensitivity and low power consumption. By combining an air chamber to the one side of the AlN cantilever surface, the barometric pressure change generates a piezoelectric voltage. Thus, a wake-up switch triggered by air pressure change can be achieved using an AlN cantilever. The size of the fabricated AlN cantilever was 2000 μm × 1000 μm × 2 μm. The sensitivity to static differential pressure was 11.5 mV/Pa at the range of −20 Pa to 20 Pa. We evaluated the response of the sensor, which was composed of the AlN cantilever and the chamber of 60 ml in volume, when air pressure change was applied. The output voltage increased with increasing the applied air pressure change. It was observed that the maximum output voltage of 50 mV was generated when the air pressure change was 13 Pa

  18. Understanding AlN Obtaining Through Computational Thermodynamics Combined with Experimental Investigation

    Science.gov (United States)

    Florea, R. M.

    2017-06-01

    Basic material concept, technology and some results of studies on aluminum matrix composite with dispersive aluminum nitride reinforcement was shown. Studied composites were manufactured by „in situ” technique. Aluminum nitride (AlN) has attracted large interest recently, because of its high thermal conductivity, good dielectric properties, high flexural strength, thermal expansion coefficient matches that of Si and its non-toxic nature, as a suitable material for hybrid integrated circuit substrates. AlMg alloys are the best matrix for AlN obtaining. Al2O3-AlMg, AlN-Al2O3, and AlN-AlMg binary diagrams were thermodynamically modelled. The obtained Gibbs free energies of components, solution parameters and stoichiometric phases were used to build a thermodynamic database of AlN- Al2O3-AlMg system. Obtaining of AlN with Liquid-phase of AlMg as matrix has been studied and compared with the thermodynamic results. The secondary phase microstructure has a significant effect on the final thermal conductivity of the obtained AlN. Thermodynamic modelling of AlN-Al2O3-AlMg system provided an important basis for understanding the obtaining behavior and interpreting the experimental results.

  19. Lattice damage induced by Tb-implanted AlN crystalline films

    International Nuclear Information System (INIS)

    Lu Fei; Hu Hui; Rizzi, A.

    2002-01-01

    AlN films with thickness from 100 to 1000 nm were grown on SiC substrate by MBE. AlN crystalline films were doped by implantation with 160 keV Tb ions to fluences of 5x10 14 , 1.5x10 15 , 3x10 15 and 6x10 15 ions/cm 2 , respectively. The damage profiles in AlN films induced by Tb implantation were investigated using RBS/channeling technique. A procedure developed by Feldman and Rodgers was used to extract damage profile by considering the dechanneling mechanism of multiple. The comparison of the extracted profile with TRIM prediction shows a significant difference in the shape and in the position of damage profile. The damage profile in AlN film is similar as Tb distribution. The RBS/channeling of Tb-implanted AlN film before and after 950 deg. C annealing treatments show a good consistency, which indicate that high temperature annealing cannot result in a significant change in both crystal damage and in Tb distribution

  20. Electro-acoustic sensors based on AlN thin film: possibilities and limitations

    Science.gov (United States)

    Wingqvist, Gunilla

    2011-06-01

    The non-ferroelectric polar wurtzite aluminium nitride (AlN) material has been shown to have potential for various sensor applications both utilizing the piezoelectric effect directly for pressure sensors or indirectly for acoustic sensing of various physical, chemical and biochemical sensor applications. Especially, sputter deposited AlN thin films have played a central role for successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device - the thin film bulk acoustic resonator (FBAR or TFBAR), with its primary use for high frequency filter applications for the telecom industry. AlN has been the dominating choice for commercial application due to compatibility with the integrated circuit technology, low acoustic and dielectric losses, high acoustic velocity in combination with comparably high (but still for some applications limited) electromechanical coupling. Recently, increased piezoelectric properties (and also electromechanical coupling) in the AlN through the alloying with scandium nitride (ScN) have been identified both experimentally and theoretically. Inhere, the utilization of piezoelectricity in electro-acoustic sensing will be discussed together with expectation on acoustic FBAR sensor performance with variation in piezoelectric material properties in the parameter space around AlN due to alloying, in view of the ScxAl1-xN (0

  1. First-principles molecular dynamics investigation of thermal and mechanical stability of the TiN(001)/AlN and ZrN(001)/AlN heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ivashchenko, V.I., E-mail: ivash@ipms.kiev.ua [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky str. 3, 03142 Kyiv (Ukraine); Veprek, S., E-mail: stan.veprek@lrz.tum.de [Department of Chemistry, Technical University Munich, Lichtenbergstrasse 4, D-85747 Garching (Germany); Turchi, P.E.A. [Lawrence Livermore National Laboratory (L-352), P.O. Box 808, Livermore, CA 94551 (United States); Shevchenko, V.I. [Institute of Problems of Material Science, National Academy of Science of Ukraine, Krzhyzhanosky str. 3, 03142 Kyiv (Ukraine); Leszczynski, J. [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, MS 39217 (United States); Gorb, L. [Department of Chemistry and Biochemistry, Interdisciplinary Center for Nanotoxicity, Jackson State University, Jackson, MS 39217 (United States); U.S. Army ERDC, Vicksburg, MS 39180 (United States); Hill, F. [U.S. Army ERDC, Vicksburg, MS 39180 (United States)

    2014-08-01

    First-principles quantum molecular dynamics investigations of TiN(001)/AlN and ZrN(001)/AlN heterostructures with one and two monolayers (1 ML and 2 ML) of AlN interfacial layers were carried out in the temperature range of 0–1400 K with subsequent static relaxation. It is shown that the epitaxially stabilized cubic B1-AlN interfacial layers are preserved in all TiN(001)/AlN heterostructures over the whole temperature range. In the ZrN(001)/AlN heterostructures, the B1-AlN(001) interfacial layer exists at 0 K, but it transforms into a distorted one at 10 K consisting of tetrahedral AlN{sub 4}, octahedral AlN{sub 6}, and AlN{sub 5} units. The thermal stability of the interfaces was investigated by studying the phonon dynamic stability of the B1-AlN phase with different lattice parameters. The calculations showed that the B1-AlN interface should be unstable in ZrN(001)/AlN heterostructures and nanocomposites, and in those based on transition metal nitrides with lattice parameters larger than 4.4 Å. Electronic band structure calculations showed that energy gap forms around the Fermi energy for all interfaces. The formation of the interfacial AlN layer in TiN and ZrN crystals reduces their ideal tensile and shear strengths. Upon tensile load, decohesion occurs between Ti (Zr) and N atoms adjacent to the 1 ML AlN interfacial layer, whereas in the case of 2 ML AlN it occurs inside the TiN and ZrN slabs. The experimentally reported strength enhancement in the TiN/AlN and ZrN/AlN heterostructures is attributed to impeding effect of the interfacial layer on the plastic flow. - Highlights: • First-principles quantum molecular dynamics studies were conducted. • TiN- and ZrN-based heterostructures with one and two AlN interfacial layers. • Stability and structural transformation between 0 and 1400 K have been calculated. • Stress–strain relationships and ideal strengths determined. • Systems which may form stable superhard heterostructures are identified.

  2. DFT study on the adsorption behavior and electronic response of AlN nanotube and nanocage toward toxic halothane gas

    Science.gov (United States)

    Mohammadi, R.; Hosseinian, A.; Khosroshahi, E. Saedi; Edjlali, L.; Vessally, E.

    2018-04-01

    We have investigated the adsorption of a halothane molecule on the AlN nanotube, and nanocage using density functional theory calculations. We predicted that the halothane molecule tends to be physically adsorbed on the surface of AlN nanotube with adsorption energy (Ead) of -4.2 kcal/mol. The electronic properties of AlN nanotube are not affected by the halothane, and it is not a sensor. But the AlN nanocage is more reactive than the AlN nanotube because of its higher curvature. The halothane tends to be adsorbed on a hexagonal ring, an Alsbnd N bond, and a tetragonal ring of the AlN nanocage. The adsorption ability order is as follows: tetragonal ring (Ead = -14.7 kcal/mol) > Alsbnd N bond (Ead = -12.3 kcal/mol) > hexagonal ring (Ead = -10.1 kcal/mol). When a halothane molecule is adsorbed on the AlN nanocage, its electrical conductivity is increased, demonstrating that it can yield an electronic signal at the presence of this molecule, and can be employed in chemical sensors. The AlN nanocage benefits from a short recovery time of about 58 ms at room temperature.

  3. Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

    Directory of Open Access Journals (Sweden)

    Marsetio Noorprajuda

    2018-04-01

    Full Text Available The effect of oxygen partial pressure (PO2 on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c-polarity to aluminum (+c-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002 and (10−12 X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

  4. A novel surface micromachining process to fabricate AlN unimorph suspensions and its application for RF resonators

    NARCIS (Netherlands)

    Saravanan, S.; Saravanan, S.; Berenschot, Johan W.; Krijnen, Gijsbertus J.M.; Elwenspoek, Michael Curt

    2006-01-01

    A novel surface micromachining process is reported for aluminum nitride (AlN) thin films to fabricate piezoelectric unimorph suspension devices for micro actuator applications. Wet anisotropic etching of AlN thin film is used with a Cr metal mask layer in the microfabrication process. Tetra methyl

  5. Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

    Energy Technology Data Exchange (ETDEWEB)

    Koltsov, A. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)], E-mail: alexey.koltsov@arcelor.com; Hodaj, F.; Eustathopoulos, N. [SIMAP - UMR CNRS 5266, INP Grenoble-UJF, Domaine Universitaire, BP 75, 1130 rue de la Piscine, 38402 Saint Martin d' Heres, Cedex (France)

    2008-11-15

    In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T{sub m} = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy.

  6. Brazing of AlN to SiC by a Pr silicide: Physicochemical aspects

    International Nuclear Information System (INIS)

    Koltsov, A.; Hodaj, F.; Eustathopoulos, N.

    2008-01-01

    In view of their very different thermomechanical properties, joining of metals to ceramics by brazing is usually performed by means of one or more interlayers. In a recent investigation AlN was chosen as interlayer material for brazing SiC to a superalloy. The aim of the present study is to determine an alloy with a high melting point (close to 1200 deg. C) enabling brazing of AlN to SiC. Two types of experiments are performed with a Si-17 at.% Pr eutectic alloy (T m = 1212 deg. C): sessile drop experiments to determine wetting and brazing of AlN and SiC plates to determine gap filling. Experiments are carried out in high vacuum to promote deoxidation. Interfacial reactivity, joint microstructure and type of failure occurring during cooling are examined by optical and scanning electron microscopy

  7. Ab initio study of M2AlN (M = Ti,V,Cr)

    International Nuclear Information System (INIS)

    Sun, Zhimei; Music, Denis; Ahuja, Rajeev; Schneider, Jochen M

    2005-01-01

    We have studied M 2 AlN phases, where M = Ti, V, and Cr, by means of ab initio total energy calculations. The bulk modulus of M 2 AlN increases as Ti is replaced with V and Cr by 19.0% and 26.5%, respectively, which can be understood on the basis of the increased number of valence electrons filling the p-d hybridized bonding states. The bulk modulus of M 2 AlN is generally higher than that of the corresponding M 2 AlC phase, which may be explained by an extra electron in the former phases contributing to stronger chemical bonding. This work is important for fundamental understanding of elastic properties of these ternary nitrides and may inspire future experimental research. (letter to the editor)

  8. Oxidation behaviour of a Ti2AlN MAX-phase coating

    International Nuclear Information System (INIS)

    Wang Qimin; Kim, Kwangho; Garkas, W; Renteria, A Flores; Leyens, C; Sun Chao

    2011-01-01

    In this paper, we reported the oxidation behaviour of Ti 2 AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti 2 AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 deg. C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti 2 AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

  9. Oxidation behaviour of a Ti{sub 2}AlN MAX-phase coating

    Energy Technology Data Exchange (ETDEWEB)

    Wang Qimin; Kim, Kwangho [National Core Research Center for Hybrid Materials Solution, Pusan National University, Busan 609-735 (Korea, Republic of); Garkas, W; Renteria, A Flores [Chair of Physical Metallurgy and Materials Technology, Technical University of Brandenburg at Cottbus, 03046 Cottbus (Germany); Leyens, C [Institute of Materials Science, Technical University of Dresden, Helmholtzstrasse 7, 01069 Dresden (Germany); Sun Chao, E-mail: qmwang@pusan.ac.kr, E-mail: kwhokim@pusan.ac.kr [Division of Surface Engineering of Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2011-10-29

    In this paper, we reported the oxidation behaviour of Ti{sub 2}AlN coatings on a -TiAl substrate. The coatings composed mainly of Ti{sub 2}AlN MAX phase were obtained by magnetron sputtering and subsequent vacuum annealing. Isothermal oxidation tests at 700-900 deg. C were performed in air. The results indicated that the oxidation resistance of the -TiAl alloy can be improved by depositing a Ti{sub 2}AlN layer on the alloy surface, especially at high temperatures. An Al-rich oxide scale formed on the coating surfaces during oxidation. This scale acts as diffusion barrier blocking the ingress of oxidation, and effectively protects the coated alloys from further oxidation attack.

  10. Quantitative Evaluation of Strain in Epitaxial 2H AlN Layers

    International Nuclear Information System (INIS)

    Nader, N.; Pezoldt, J.

    2011-01-01

    To improve the quality of AlN layer deposit on SiC/Si, different Ge amounts (0.25, 0.5, 1, 2ML) were deposited before the carbonization process at the silicon substrate in order to reduce the lattice parameters mismatch between Si and SiC grown layers. The residual stress of the hexagonal AlN layers derives from the phonon frequency shifts of the E1(TO) phonon mode. The crystalline quality of the AlN layer is correlated to and investigated by the full width of the half maximum (FWHM) and the intensity of E1(TO) mode of the 2H-AlN. Best crystalline quality and lower stress value are found in the case where 1ML of Ge amount is predeposited. The E1(TO) mode phonon frequency shifts-down by 3 cm-1/GPa with respect to an unstrained layer. (author)

  11. Structure and chemistry of the Si(111)/AlN interface

    Science.gov (United States)

    Radtke, G.; Couillard, M.; Botton, G. A.; Zhu, D.; Humphreys, C. J.

    2012-01-01

    We investigate the atomic structure and the chemistry of the Si(111)/AlN interface for an AlN film grown at low-temperature (735 °C) by metalorganic vapor phase epitaxy. A heterogeneous interface is formed from the alternation of crystallographically abrupt and partly amorphous regions. The polarity of the AlN film, along with the projected atomic structure of the crystalline interface, is retrieved using high-angle annular dark field imaging, and a model, based on these experimental observations, is proposed for the bonding at the interface. Electron energy-loss spectrum-imaging, however, also reveals a chemical intermixing, placing our growth conditions at the onset of SiNx interlayer formation.

  12. Preliminary comparison of three processes of AlN oxidation: dry, wet and mixed ones

    Directory of Open Access Journals (Sweden)

    Korbutowicz R.

    2016-03-01

    Full Text Available Three methods of AlN layers oxidation: dry, wet and mixed (wet with oxygen were compared. Some physical parameters of oxidized thin films of aluminum nitride (AlN layers grown on silicon Si(1 1 1 were investigated by means Energy-Dispersive X-ray Spectroscopy (EDS and Spectroscopic Ellipsometry (SE. Three series of the thermal oxidations processes were carried out at 1012 °C in pure nitrogen as carrying gas and various gas ambients: (a dry oxidation with oxygen, (b wet oxidation with water steam and (c mixed atmosphere with various process times. All the research methods have shown that along with the rising of the oxidation time, AlN layer across the aluminum oxide nitride transforms to aluminum oxide. The mixed oxidation was a faster method than the dry or wet ones.

  13. Investigation of blue luminescence in Mg doped AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Xiliang; Xiong, Juan, E-mail: xiongjuana@163.com; Zhang, Weihai; Liu, Lei; Gu, Haoshuang, E-mail: guhsh@hubu.edu.cn

    2015-02-05

    Highlights: • AlN films doped with 0.8–4.4 at.% Mg were deposited by magnetron sputtering. • Structural and photoluminescence properties of Mg-doped AlN films were synthesized in detailed. • A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. • An enhancement of A1 (TO) mod and a slightly blue-shift of E2 (high) mode were observed. - Abstract: The Al{sub 1−x}Mg{sub x}N thin films were deposited on (1 0 0) silicon substrates by magnetron sputtering. The structural and photoluminescence properties of the films with varying Mg concentrations were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Raman spectra and photoluminescence (PL), respectively. The results clearly showed that the Mg atoms successfully incorporated into AlN, while the crystal structure of the films was maintained. The Raman spectra of Al{sub 1−x}Mg{sub x}N films reveals the enhancement of A{sub 1} (TO) mode, a slightly blue-shift and an augment in FWHM for E{sub 2} (high) phonon mode with increasing Mg content, which can be associated with the deterioration of (0 0 2) orientation and the appearance of (1 0 0) orientation. A broad blue band centered at 420 nm and 440 nm was observed in Mg-doped AlN films. It was suggested that the transitions from the shallow donor level not only to the ground state but also to the excited states of the deep level was responsible for the broad blue emission band. This work indicates the AlN film for the application in lighting emission devices.

  14. Fabrication of AlN thin films on different substrates at ambient temperature

    CERN Document Server

    Cai, W X; Wu, P H; Yang, S Z; Ji, Z M

    2002-01-01

    Aluminium nitride (AlN) is very useful as a barrier in superconductor-insulator-superconductor (SIS) device or as an insulating layer in many other applications. At ambient temperature, we deposit AlN thin films onto different substrates (such as MgO, LaAlO sub 3 and Si) by using radio-frequency magnetron sputtering and pure Al target. X-ray diffraction (XRD) and PHI-scan patterns show that the films grown on MgO substrates are excellent epitaxial films with (101) orientation of a hexagonal lattice. A possible structure of the interface between the film and the substrate is suggested and discussed.

  15. Single-crystalline AlN growth on sapphire using physical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cardenas-Valencia, Andres M., E-mail: andres.cardenas@sri.co [SRI International (United States); Onishi, Shinzo; Rossie, Benjamin [SRI International (United States)

    2011-02-07

    A novel technique for growing single crystalline aluminum nitride (AlN) films is presented. The novelty of the technique, specifically, comes from the use of an innovative physical vapor deposition magnetron sputtering tool, which embeds magnets into the target material. A relatively high deposition rates is achieved ({approx}0.2 {mu}m/min), at temperatures between 860 and 940 {sup o}C. The AlN, grown onto sapphire, is single-crystalline as evidenced by observation using transmission electron microscopy. Tool configuration and growth conditions are discussed, as well as a first set of other analytical results, namely, x-ray diffraction and ultraviolet-visible transmission spectrophotometry.

  16. Properties of planar structures based on Policluster films of diamond and AlN

    Science.gov (United States)

    Belyanin, A. F.; Luchnikov, A. P.; Nalimov, S. A.; Bagdasarian, A. S.

    2018-01-01

    AlN films doped with zinc were grown on Si substrates by RF magnetron reactive sputtering of a compound target. Policluster films of diamond doped with boron were formed on layered Si/AlN substrates from the gas phase hydrogen and methane, activated arc discharge. By electron microscopy, X-ray diffraction and Raman spectroscopy the composition and structure of synthetic policluster films of diamond and AlN films were studied. Photovoltaic devices based on the AlN/PFD layered structure are presented.

  17. EDITORIAL: Nanowires for energy Nanowires for energy

    Science.gov (United States)

    LaPierre, Ray; Sunkara, Mahendra

    2012-05-01

    This special issue of Nanotechnology focuses on studies illustrating the application of nanowires for energy including solar cells, efficient lighting and water splitting. Over the next three decades, nanotechnology will make significant contributions towards meeting the increased energy needs of the planet, now known as the TeraWatt challenge. Nanowires in particular are poised to contribute significantly in this development as presented in the review by Hiralal et al [1]. Nanowires exhibit light trapping properties that can act as a broadband anti-reflection coating to enhance the efficiency of solar cells. In this issue, Li et al [2] and Wang et al [3] present the optical properties of silicon nanowire and nanocone arrays. In addition to enhanced optical properties, core-shell nanowires also have the potential for efficient charge carrier collection across the nanowire diameter as presented in the contribution by Yu et al [4] for radial junction a-Si solar cells. Hybrid approaches that combine organic and inorganic materials also have potential for high efficiency photovoltaics. A Si-based hybrid solar cell is presented by Zhang et al [5] with a photoconversion efficiency of over 7%. The quintessential example of hybrid solar cells is the dye-sensitized solar cell (DSSC) where an organic absorber (dye) coats an inorganic material (typically a ZnO nanostructure). Herman et al [6] present a method of enhancing the efficiency of a DSSC by increasing the hetero-interfacial area with a unique hierarchical weeping willow ZnO structure. The increased surface area allows for higher dye loading, light harvesting, and reduced charge recombination through direct conduction along the ZnO branches. Another unique ZnO growth method is presented by Calestani et al [7] using a solution-free and catalyst-free approach by pulsed electron deposition (PED). Nanowires can also make more efficient use of electrical power. Light emitting diodes, for example, will eventually become the

  18. ARE ULTRA-LONG GAMMA-RAY BURSTS CAUSED BY BLUE SUPERGIANT COLLAPSARS, NEWBORN MAGNETARS, OR WHITE DWARF TIDAL DISRUPTION EVENTS?

    Energy Technology Data Exchange (ETDEWEB)

    Ioka, Kunihito [Center for Gravitational Physics, Yukawa Institute for Theoretical Physics, Kyoto University, Kyoto 606-8502 (Japan); Hotokezaka, Kenta; Piran, Tsvi, E-mail: kunihito.ioka@yukawa.kyoto-u.ac.jp [Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 91904 (Israel)

    2016-12-10

    Ultra-long gamma-ray bursts (ulGRBs) are a new population of GRBs with extreme durations of ∼10{sup 4} s. Leading candidates for their origin are blue supergiant collapsars, magnetars, and white dwarf tidal disruption events (WD-TDEs) caused by massive black holes (BHs). Recent observations of supernova-like (SN-like) bumps associated with ulGRBs challenged both the WD-TDE and the blue supergiant models because of the detection of SNe and the absence of hydrogen lines, respectively. We propose that WD-TDEs can accommodate the observed SN-like bumps if the fallback WD matter releases energy into the unbound WD ejecta. The observed ejecta energy, luminosity, and velocity are explained by the gravitational energy, Eddington luminosity, and escape velocity of the formed accretion disk, respectively. We also show that the observed X-rays can ionize the ejecta, eliminating lines. The SN-like light curves (SN 2011kl) for the ulGRB 111209A are consistent with all three models, although a magnetar model is unnatural because the spin-down time required to power the SN-like bump is a hundred times longer than the GRB. Our results imply that TDEs are a possible energy source for SN-like events in general and for ulGRBs in particular.

  19. 700 F hybrid capacitors cells composed of activated carbon and Li4Ti5O12 microspheres with ultra-long cycle life

    Science.gov (United States)

    Ruan, Dianbo; Kim, Myeong-Seong; Yang, Bin; Qin, Jun; Kim, Kwang-Bum; Lee, Sang-Hyun; Liu, Qiuxiang; Tan, Lei; Qiao, Zhijun

    2017-10-01

    To address the large-scale application demands of high energy density, high power density, and long cycle lifetime, 700-F hybrid capacitor pouch cells have been prepared, comprising ∼240-μm-thick activated carbon cathodes, and ∼60-μm-thick Li4Ti5O12 anodes. Microspherical Li4Ti5O12 (M-LTO) synthesized by spray-drying features 200-400 nm primary particles and interconnected nanopore structures. M-LTO half-cells exhibits high specific capacities (175 mAhh g-1), good rate capabilities (148 mAhh g-1 at 20 C), and ultra-long cycling stabilities (90% specific capacity retention after 10,000 cycles). In addition, the obtained hybrid capacitors comprising activated carbon (AC) and M-LTO shows excellent cell performances, achieving a maximum energy density of 51.65 Wh kg-1, a maximum power density of 2466 W kg-1, and ∼92% capacitance retention after 10,000 cycles, thus meeting the demands for large-scale applications such as trolleybuses.

  20. Enhanced field emission from Si doped nanocrystalline AlN thin films

    International Nuclear Information System (INIS)

    Thapa, R.; Saha, B.; Chattopadhyay, K.K.

    2009-01-01

    Si doped and undoped nanocrystalline aluminum nitride thin films were deposited on various substrates by direct current sputtering technique. X-ray diffraction analysis confirmed the formation of phase pure hexagonal aluminum nitride with a single peak corresponding to (1 0 0) reflection of AlN with lattice constants, a = 0.3114 nm and c = 0.4986 nm. Energy dispersive analysis of X-rays confirmed the presence of Si in the doped AlN films. Atomic force microscopic studies showed that the average particle size of the film prepared at substrate temperature 200 deg. C was 9.5 nm, but when 5 at.% Si was incorporated the average particle size increased to ∼21 nm. Field emission study indicated that, with increasing Si doping concentration, the emission characteristics have been improved. The turn-on field (E to ) was 15.0 (±0.7) V/μm, 8.0 (±0.4) V/μm and 7.8 (±0.5) V/μm for undoped, 3 at.% and 5 at.% Si doped AlN films respectively and the maximum current density of 0.27 μA/cm 2 has been observed for 5 at.% Si doped nanocrystalline AlN film. It was also found that the dielectric properties were highly dependent on Si doping.

  1. Structure of AlN films deposited by magnetron sputtering method

    Directory of Open Access Journals (Sweden)

    Nowakowska-Langier K.

    2015-09-01

    Full Text Available AlN films on a Si substrate were synthesized by magnetron sputtering method. A dual magnetron system operating in AC mode was used in the experiment. Processes of synthesis were carried out in the atmosphere of a mixture of Ar/N2. Morphology and phase structure of the AlN films were investigated at different pressures. Structural characterizations were performed by means of SEM and X-ray diffraction methods. Our results show that the use of magnetron sputtering method in a dual magnetron sputtering system is an effective way to produce AlN layers which are characterized by a good adhesion to the silicon substrate. The morphology of the films is strongly dependent on the Ar/N2 gas mixture pressure. An increase of the mixture pressure is accompanied by a columnar growth of the layers. The films obtained at the pressure below 1 Pa are characterized by finer and compacter structure. The AlN films are characterized by a polycrystalline hexagonal (wurtzite structure in which the crystallographic orientation depends on the gas mixture pressure.

  2. Early and Late Retrieval of the ALN Removable Vena Cava Filter: Results from a Multicenter Study

    International Nuclear Information System (INIS)

    Pellerin, O.; Barral, F. G.; Lions, C.; Novelli, L.; Beregi, J. P.; Sapoval, M.

    2008-01-01

    Retrieval of removable inferior vena cava (IVC) filters in selected patients is widely practiced. The purpose of this multicenter study was to evaluate the feasibility and results of percutaneous removal of the ALN removable filter in a large patient cohort. Between November 2003 and June 2006, 123 consecutive patients were referred for percutaneous extraction of the ALN filter at three centers. The ALN filter is a removable filter that can be implanted through a femoral/jugular vein approach and extracted by the jugular vein approach. Filter removal was attempted after an implantation period of 93 ± 15 days (range, 6-722 days) through the right internal jugular vein approach using the dedicated extraction kit after control inferior vena cavography. Following filter removal, vena cavograms were obtained in all patients. Successful extraction was achieved in all but one case. Among these successful retrievals, additional manipulation using a femoral approach was needed when the apex of the filter was close to the IVC wall in two patients. No immediate IVC complications were observed according to the postimplantation cavography. Neither technical nor clinical differences between early and late filter retrieval were noticed. Our data confirm the safety of ALN filter retrieval up to 722 days after implantation. In infrequent cases, additional endovenous filter manipulation is needed to facilitate extraction.

  3. Cd doping of AlN via ion implantation studied with perturbed angular correlation

    CERN Document Server

    Kessler, Patrick; Miranda, Sérgio MC; Simon, R; Correia, João Guilherme; Johnston, Karl; Vianden, Reiner

    2012-01-01

    AlN with a wide bandgap of 6.2 eV is a promising candidate for ultraviolet light-emitting diodes and laser diodes. However, the production of the required p-type AlN is still challenging. As a possible dopant Cd was suggested among other Group II atoms (Be, Mg, and Zn). In this study the annealing condition of implanted Cd in AlN was investigated with the method of the perturbed angular correlation (PAC). Therefore radioactive $^{117}$Cd or $^{111m}$Cd ions were implanted into thin AlN films on sapphire substrate with an energy of 30 keV and fluences in the range of 10$^{11}$ ions/cm$^{2}$. After thorough annealing with a proximity cap of the same material most of the Cd-probes occupy substitutional lattice sites and almost all implantation damage can be annealed. This results in a distinct frequency in the PAC spectra which increases with temperature. In contrast to the formation of an indium nitrogen-vacancy complex observed with the probe $^{111}$In on substitutional Al-sites no defects are bound to substi...

  4. SAP-like ultrafine-grained Al composites dispersion strengthened with nanometric AlN

    International Nuclear Information System (INIS)

    Balog, M.; Krizik, P.; Yan, M.; Simancik, F.; Schaffer, G.B.; Qian, M.

    2013-01-01

    This paper reports the development of novel Sinter-Aluminum-Pulver (SAP)-like Al–AlN nanocomposites via replacing the native Al 2 O 3 thin films on fine Al powder with a large volume fraction of in situ formed nanometric AlN dispersoids. Fine gas-atomized Al powder (d 50 =1.3 µm) compacts were first partially nitrided at 590 °C in flowing nitrogen, controlled by a small addition of Sn (0.3–0.4 wt%), and subsequently consolidated by hot direct extrusion. The resulting Al–AlN composites consisted of submicrometric Al grains reinforced with nanometric AlN dispersoids together with some nanometric Al 2 O 3 dispersoids. An Al–13 vol% AlN nanocomposite fabricated this way achieved exceptional ultimate tensile strength of 227 MPa, yield strength of 195 MPa and Young's modulus of 66 GPa at 300 °C, superior to typical SAP materials and coarse grained Al–AlN composites. In addition, the Al–13 vol% AlN nanocomposite exhibited good thermal stability up to 500 °C. The strengthening mechanism is discussed

  5. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

    2017-01-01

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  6. Effects of AlN on the densification and mechanical properties of pressureless-sintered SiC ceramics

    Directory of Open Access Journals (Sweden)

    Qisong Li

    2016-02-01

    Full Text Available In the present work, SiC ceramics was fabricated with AlN using B4C and C as sintering aids by a solid-state pressureless-sintered method. The effects of AlN contents on the densification, mechanical properties, phase compositions, and microstructure evolutions of as-obtained SiC ceramics were thoroughly investigated. AlN was found to promote further densification of the SiC ceramics due to its evaporation over 1800 °C, transportation, and solidification in the pores resulted from SiC grain coarsening. The highest relative density of 99.65% was achieved for SiC sample with 15.0 wt% AlN by the pressureless-sintered method at 2130 °C for 1 h in Ar atmosphere. Furthermore, the fracture mechanism for SiC ceramics containing AlN tended to transfer from single transgranular fracture mode to both transgranular fracture and intergranular fracture modes when the sample with 30.0 wt% AlN sintered at 1900 °C for 1 h in Ar. Also, SiC ceramics with 30.0 wt% AlN exhibited the highest fracture toughness of 5.23 MPa m1/2 when sintered at 1900 °C.

  7. A computational study on the electronic and field emission properties of Mg and Si doped AlN nanocones

    Science.gov (United States)

    Saedi, Leila; Soleymanabadi, Hamed; Panahyab, Ataollah

    2018-05-01

    Following an experimental work, we explored the effect of replacing an Al atom of an AlN nanocone by Si or Mg atom on its electronic and field emission properties using density functional theory calculations. We found that both Si-doping and Mg-doping increase the electrical conductivity of AlN nanocone, but their influences on the filed emission properties are significantly different. The Si-doping increases the electron concentration of AlN nanocone and results in a large electron mobility and a low work function, whereas Mg-doping leads to a high hole concentration below the conduction level and increases the work function in agreement with the experimental results. It is predicted that Si-doped AlN nanocones show excellent filed emission performance with higher emitted electron current density compared to the pristine AlN nanocone. But the Mg-doping meaningfully decreases the emitted electron current density from the surface of AlN nanocone. The Mg-doping can increase the work function about 41.9% and the Si-doping can decrease it about 6.3%. The Mg-doping and Si-doping convert the AlN nanocone to a p-type and n-type semiconductors, respectively. Our results explain in a molecular level what observed in the experiment.

  8. Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

    KAUST Repository

    Sun, Haiding

    2017-08-08

    The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

  9. Coating of Si3N4 fine particles with AlN by fluidized bed-CVD; Ryudoso CVD ho ni yoru Si3N4 biryushi no AlN hifuku

    Energy Technology Data Exchange (ETDEWEB)

    Chiba, S.; Oyama, Y. [Hokkaido National Industrial Research Institute, Sapporo (Japan); Harima, K.; Kondo, K.; Shinohara, K. [Hokkaido University, Sapporo (Japan)

    1996-03-10

    Agglomerates of 100-250 {mu}m consisting of Si3N4 primary particles of 0.76 {mu}m were made with a rotary vibrating sieve. Si3N4 fine particles were coated with AlN by gas phase reaction with AlCl3 and NH3 in some fluidized beds of the agglomerates. The cross sectional distribution of AlN in the agglomerate was measured by EPMA analysis. As a result, uniform deposition of AlN was obtained at a relatively low reaction temperature and low gas velocity. 4 refs., 3 figs.

  10. A Novel Fully Depleted Air AlN Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor

    International Nuclear Information System (INIS)

    Yuan, Yang; Yong, Gao; Peng-Liang, Gong

    2008-01-01

    A novel fully depleted air AlN silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOS-FET) is presented, which can eliminate the self-heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75 K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The off-state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28mV, so the threshold voltage change induced by employing high thermal conductivity material is cured. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Local heteroepitaxy as an adhesion mechanism in aluminium coatings cold gas sprayed on AlN substrates

    International Nuclear Information System (INIS)

    Wüstefeld, Christina; Rafaja, David; Motylenko, Mykhaylo; Ullrich, Christiane; Drehmann, Rico; Grund, Thomas; Lampke, Thomas; Wielage, Bernhard

    2017-01-01

    Cold gas sprayed Al coatings deposited onto wurtzitic AlN substrates show excellent adhesion. As a possible adhesion mechanism, the local heteroepitaxy between Al and AlN was considered and verified experimentally in Al coatings, which were deposited using magnetron sputtering or cold gas spraying on single-crystalline and polycrystalline AlN substrates. Analysis of the local orientation relationships at the Al/AlN interfaces revealed that preferentially such lattice planes of Al align parallel with the upright lattice planes of AlN, which possess similar interplanar distances. The matching lattice planes in the Al coatings grew as continuations of the lattice planes in the AlN substrates. In all samples under study, the parallel alignment of the lattice planes {220}_A_l and {110}_A_l_N was found. Additional orientation relationships between Al and AlN arose if parallel lattice planes with similar interplanar spacing could be found in both counterparts via rotation of the lattice planes {220}_A_l around their normal direction. Still, the oriented growth of Al on AlN is only possible if Al atoms in the deposited coatings are mobile enough to rearrange along the AlN surface. Whereas the mobility of Al atoms in a magnetron sputtering process is expected to be sufficiently high, the intrinsic mobility of Al atoms in the cold gas sprayed particles is anticipated to be low. However, the auxiliary microstructure analyses have shown that local recrystallization and partial melting are two phenomena, which can facilitate the rearrangement of Al atoms within the cold gas sprayed coating.

  12. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    International Nuclear Information System (INIS)

    Lin, Jianliang; Chistyakov, Roman

    2017-01-01

    Highlights: • Highly orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm"−"2) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm"−"2 improved the orientation. Further increasing the peak target current density to above 0.53 Acm"−"2 showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  13. C-axis orientated AlN films deposited using deep oscillation magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Jianliang, E-mail: Jianliang.lin@swri.org [Southwest Research Institute, San Antonio, TX 78238 (United States); Chistyakov, Roman [Zpulser LLC, Mansfield, MA 02048 (United States)

    2017-02-28

    Highlights: • Highly <0001> orientated AlN films were deposited by DOMS technique. • Controlled ion flux bombardment improved the <0001> texture and crystalline quality. • Excessive ion bombardment showed a detrimental effect on the c-axis orientation growth. • Improved c-axis alignment accompanied with stress relaxation with increasing film thickness. - Abstract: Highly <0001> c-axis orientated aluminum nitride (AlN) films were deposited on silicon (100) substrates by reactive deep oscillation magnetron sputtering (DOMS). No epitaxial favored bond layer and substrate heating were applied for assisting texture growth. The effects of the peak target current density (varied from 0.39 to 0.8 Acm{sup −2}) and film thickness (varied from 0.25 to 3.3 μm) on the c-axis orientation, microstructure, residual stress and mechanical properties of the AlN films were investigated by means of X-ray diffraction rocking curve methodology, transmission electron microscopy, optical profilometry, and nanoindentation. All AlN films exhibited a <0001> preferred orientation and compressive residual stresses. At similar film thicknesses, an increase in the peak target current density to 0.53 Acm{sup −2} improved the <0001> orientation. Further increasing the peak target current density to above 0.53 Acm{sup −2} showed limited contribution to the texture development. The study also showed that an increase in the thickness of the AlN films deposited by DOMS improved the c-axis alignment accompanied with a reduction in the residual stress.

  14. Ultra-long pharmacokinetic properties of insulin degludec are comparable in elderly subjects and younger adults with type 1 diabetes mellitus.

    Science.gov (United States)

    Korsatko, S; Deller, S; Mader, J K; Glettler, K; Koehler, G; Treiber, G; Urschitz, M; Wolf, M; Hastrup, H; Søndergaard, F; Haahr, H; Pieber, T R

    2014-01-01

    Management of diabetes in elderly subjects is complex and careful management of glucose levels is of particular importance in this population because of an increased risk of diabetes-related complications and hypoglycaemia. The aim of this study was to evaluate the pharmacokinetic and pharmacodynamic properties of insulin degludec (IDeg), a basal insulin with an ultra-long duration of action, in elderly subjects with type 1 diabetes compared with younger adults. This trial was a randomised, double-blind, two-period, crossover trial conducted in a single centre and included both inpatient and outpatient periods. Subjects were men and women aged 18-35 years inclusive (younger adult group) or ≥65 years (elderly group) with type 1 diabetes who received IDeg (0.4 U/kg) via subcutaneous injection in the thigh once-daily for six days. Following 6-day dosing, a 26-hour euglycaemic glucose clamp procedure was conducted to evaluate the steady-state pharmacodynamic effects of IDeg. Blood samples were taken for pharmacokinetic analysis up to 120 h post-dose. Pharmacokinetic endpoints included the total exposure of IDeg, ie the area under the IDeg serum concentration curve during one dosing interval at steady state (AUC(IDeg,τ,SS)) (τ = 0-24 h, equal to one dosing interval) and the maximum IDeg serum concentration at steady state (C(max,IDeg,SS)). Pharmacodynamic endpoints included the total glucose-lowering effect of IDeg, ie the area under the glucose infusion rate (GIR) curve at steady state (AUC(GIR,τ,SS)), and the maximum GIR at steady state (GIR(max,IDeg,SS)). Total exposure (AUC(IDeg,τ,SS)) and maximum concentration (C(max,IDeg,SS)) of IDeg were comparable between elderly subjects and younger adults. Estimated mean age group ratios (elderly/younger adult) for AUC(IDeg,τ,SS) and C(max,IDeg,SS) and corresponding two-sided 95 % confidence intervals (CIs) were 1.04 (95 % CI 0.73-1.47) and 1.02 (95 % CI 0.74-1.39), respectively. Mean AUC(IDeg,0-12h

  15. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Directory of Open Access Journals (Sweden)

    Veer Dhaka

    2016-01-01

    Full Text Available Low temperature (∼200 °C grown atomic layer deposition (ALD films of AlN, TiN, Al2O3, GaN, and TiO2 were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP nanowires (NWs, and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL at low temperatures (15K, and the best passivation was achieved with a few monolayer thick (2Å film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL was achieved with a capping of 2nm thick Al2O3. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al2O3 layer increased the carrier decay time from 251 ps (as-etched nanopillars to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al2O3 provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  16. Protective capping and surface passivation of III-V nanowires by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Dhaka, Veer, E-mail: veer.dhaka@aalto.fi; Perros, Alexander; Kakko, Joona-Pekko; Haggren, Tuomas; Lipsanen, Harri [Department of Micro- and Nanosciences, Micronova, Aalto University, P.O. Box 13500, FI-00076 (Finland); Naureen, Shagufta; Shahid, Naeem [Research School of Physics & Engineering, Department of Electronic Materials Engineering, Australian National University, Canberra ACT 2601 (Australia); Jiang, Hua; Kauppinen, Esko [Department of Applied Physics and Nanomicroscopy Center, Aalto University, P.O. Box 15100, FI-00076 (Finland); Srinivasan, Anand [School of Information and Communication Technology, KTH Royal Institute of Technology, Electrum 229, S-164 40 Kista (Sweden)

    2016-01-15

    Low temperature (∼200 °C) grown atomic layer deposition (ALD) films of AlN, TiN, Al{sub 2}O{sub 3}, GaN, and TiO{sub 2} were tested for protective capping and surface passivation of bottom-up grown III-V (GaAs and InP) nanowires (NWs), and top-down fabricated InP nanopillars. For as-grown GaAs NWs, only the AlN material passivated the GaAs surface as measured by photoluminescence (PL) at low temperatures (15K), and the best passivation was achieved with a few monolayer thick (2Å) film. For InP NWs, the best passivation (∼2x enhancement in room-temperature PL) was achieved with a capping of 2nm thick Al{sub 2}O{sub 3}. All other ALD capping layers resulted in a de-passivation effect and possible damage to the InP surface. Top-down fabricated InP nanopillars show similar passivation effects as InP NWs. In particular, capping with a 2 nm thick Al{sub 2}O{sub 3} layer increased the carrier decay time from 251 ps (as-etched nanopillars) to about 525 ps. Tests after six months ageing reveal that the capped nanostructures retain their optical properties. Overall, capping of GaAs and InP NWs with high-k dielectrics AlN and Al{sub 2}O{sub 3} provides moderate surface passivation as well as long term protection from oxidation and environmental attack.

  17. Porous TiNb2O7 Nanospheres as ultra Long-life and High-power Anodes for Lithium-ion Batteries

    International Nuclear Information System (INIS)

    Cheng, Qiushi; Liang, Jianwen; Lin, Ning; Guo, Cong; Zhu, Yongchun; Qian, Yitai

    2015-01-01

    Graphical abstract: Due to the combinative merits of porosity and nanostructure, porous TiNb 2 O 7 nanospheres exhibit ultra long cyclic life and excellent rate performance for lithium ion batteries. - Highlights: • Porous TiNb 2 O 7 nanospheres have been fabricated with the assistance of block copolymer P123. • The as-prepared TiNb 2 O 7 anodes present a reversible capacity of 160 mA h/g after 10000 cycles at 5 C with a capacity loss of only 0.0033% per cycle. • The TiNb 2 O 7 anodes show good rate performance of 167 mA h/g at 50C. • The TiNb 2 O 7 materials maintain the morphology of nanospheres and the porous structure even after 10000 cycles. - Abstract: Porous TiNb 2 O 7 nanospheres comprised of nanoparticles have been synthesized with the assistance of block copolymer P123 (EO 20 PO 70 EO 20 ). Such porous TiNb 2 O 7 nanospheres, with diameter of 500 nm, exhibit a BET surface area of 23.4 m 2 /g and pore volume of 0.155 cm 3 /g. As the anodes for lithium-ion batteries, the TiNb 2 O 7 nanospheres present a reversible capacity of 160 mA h/g after 10000 cycles at 5 C with a capacity loss of only 0.0033% per cycle, and good rate performance of 167 mA h/g at 50 C. Furthermore, the TiNb 2 O 7 materials still maintain the morphology of nanospheres and the porous structure even after 10000 cycles

  18. Establishment of ultra long-lived cell lines by transfection of TERT into normal human fibroblast TIG-1 and their characterization.

    Science.gov (United States)

    Kamada, Mizuna; Kumazaki, Tsutomu; Matsuo, Taira; Mitsui, Youji; Takahashi, Tomoko

    2012-06-01

    To establish useful human normal cell lines, TERT (telomerase reverse transcriptase) cDNA was transfected into normal female lung fibroblast, TIG-1. After long-term-sub-cultivation of 74 individual clones selected for resistance to G418, we obtained 55 cultures with normal range of life span [75 PDL (population doubling level)], 16 cultures with extended life span (75-140 PDL). In addition, 3 immortal cell strains and unexpectedly, one ultra long-lived cell line (ULT-1) with life span of 166 PDL were established. IMT-1, one of the immortal cell strains was confirmed to maintain long telomere length, high telomerase activity and an extremely low level of p16INK4A. They also showed moderate p53 and p21CIP1 expression, keeping vigorous growth rate even at 450 PDL. High level of fibronectin and collagen 1α expression confirmed IMT-1 as normal fibroblasts, although one X chromosome had been lost. ULT-1, however, kept a near normal karyotypes and had shortening of telomere length, high expression of p16INK4A, moderate levels of senescence associated-β-galactosidase positive cells and decreased growth rate only after 150 PDs (population doublings), and finally reached senescence at 166 PDL with morphology of normal senescent fibroblasts. As resources of standard normal human cell, abundant vials of early and middle passages of ULT-1 have been stocked. The use of the cell line is discussed, focusing on isograft of artificial skin and screening of anti-aging or safe chemical agents.

  19. Cr-doped Ge{sub 2}Sb{sub 2}Te{sub 5} for ultra-long data retention phase change memory

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qing; Xia, Yangyang; Zheng, Yonghui; Zhang, Qi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Liu, Bo, E-mail: liubo@mail.sim.ac.cn; Song, Sannian; Cheng, Yan; Song, Zhitang; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Huo, Ruru [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); ShanghaiTech University, Shanghai 200031 (China)

    2015-11-30

    Phase change memory is regarded as one of the most promising candidates for the next-generation non-volatile memory. Its storage medium, phase change material, has attracted continuous exploration. Ge{sub 2}Sb{sub 2}Te{sub 5} (GST) is the most popular phase change material, but its thermal stability needs to be improved when used in some fields at high temperature (more than 120 °C). In this paper, we doped Cr atoms into GST and obtained Cr{sub 10}(Ge{sub 2}Sb{sub 2}Te{sub 5}){sub 90} (labeled as Cr-GST) with high thermal stability. For Cr-GST film, the sheet resistance ratio between amorphous and crystalline states is high up to 3 orders of magnitude. The crystalline Cr-GST film inherits the phase structure of GST, with metastable face-centered cubic phase and/or stable hexagonal phase. The doped Cr atoms not only bond with other atoms but also help to improve the anti-oxidation property of Cr-GST. As for the amorphous thermal stability, the calculated temperature for 10-year-data-retention of Cr-GST film, based on the Arrhenius equation, is about 180 °C. The threshold current and threshold voltage of a cell based on Cr-GST are about 6 μA and 2.7 V. The cell could be operated by suitable voltages for more than 40 000 cycles. Thus, Cr-GST is proved to be a promising phase change material with ultra-long data retention.

  20. Long Silver Nanowires Synthesis by Pulsed Electrodeposition

    Directory of Open Access Journals (Sweden)

    M.R. Batevandi

    2015-09-01

    Full Text Available Silver nanowires were pulse electrodeposited into nanopore anodic alumina oxide templates. The effects of continuous and pulse electrodeposition waveform on the microstructure properties of the nanowire arrays were studied. It is seen that the microstructure of nanowire is depend to pulse condition. The off time duration of pulse waveform enables to control the growth direction of Ag nanowires.

  1. GaN Nanowire Devices: Fabrication and Characterization

    Science.gov (United States)

    Scott, Reum

    The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

  2. Aging of Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Osadnik, Andreas

    2012-01-01

    Organic semiconductors formed by epitaxial growth from small molecules such as the para-phenylenes or squaraines promise a vast application potential as the active ingredient in electric and optoelectronic devices. Their self-organization into organic nanowires or "nanofibers" adds a peculiar...... attribute, making them especially interesting for light generation in OLEDs and for light-harvesting devices such as solar cells. Functionalization of the molecules allows the customization of optical and electrical properties. However, aging of the wires might lead to a considerable decrease in device...... performance over time. In this study the morphological stability of organic nanoclusters and nanowires from the methoxy functionalized quaterphenylene, 4,4'''dimethoxy-1,1':4',1''4'',1'''-quaterphenylene (MOP4), is investigated in detail. Aging experiments conducted by atomic force microscopy under ambient...

  3. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  4. Characterization of Nanowire Photodetectors

    Science.gov (United States)

    2016-11-28

    characterization system and picosecond pulsed laser source will be used to provide deeper insight into the fast charge carrier dynamics in the GaAsSb and...value of the current fluctuations for a particular frequency, f is the effective measurement bandwidth at the discrete frequency point, and IDS is...GaAsSb CS nanowires. The best fit of the spectra with the simulation carried out using Matlab revealed flicker noise at lower frequency having 1/f

  5. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  6. Improved crystalline quality of AlN epitaxial layer on sapphire by introducing TMGa pulse flow into the nucleation stage

    Science.gov (United States)

    Wu, Hualong; Wang, Hailong; Chen, Yingda; Zhang, Lingxia; Chen, Zimin; Wu, Zhisheng; Wang, Gang; Jiang, Hao

    2018-05-01

    The crystalline quality of AlN epitaxial layers on sapphire substrates was improved by introducing trimethylgallium (TMGa) pulse flow into the growth of AlN nucleation layers. It was found that the density of both screw- and edge-type threading dislocations could be significantly reduced by introducing the TMGa pulse flow. With increasing TMGa pulse flow times, the lateral correlation length (i.e. the grain size) increases and the strain in the AlN epilayers changes from tensile state to compressive state. Unstrained AlN with the least dislocations and a smooth surface was obtained by introducing 2-times TMGa pulse flow. The crystalline improvement is attributed to enhanced lateral growth and improved crystalline orientation by the TMGa pulse flow.

  7. Electrochemical formation of AlN in molten LiCl-KCl-Li{sub 3}N systems

    Energy Technology Data Exchange (ETDEWEB)

    Goto, Takuya [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)]. E-mail: goto@energy.kyoto-u.ac.jp; Iwaki, Takayuki [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan); Ito, Yasuhiko [Department of Fundamental Energy Science, Graduate School of Energy Science, Kyoto University, Sakyo, Kyoto 606-8501 (Japan)

    2005-01-30

    Electrochemical formation of aluminum nitride was investigated in molten LiCl-KCl-Li{sub 3}N systems at 723 K. When Al was anodically polarized at 1.0 V (versus Li{sup +}/Li), oxidation of nitride ions proceeded to form adsorbed nitrogen atoms, which reacted with the surface to form AlN film. The obtained nitrided film had a thickness of sub-micron order. The obtained nitrided layer consisted of two regions; the outer layer involving AlN and aluminum oxynitride and the inner layer involving metallic Al and AlN. When Al electrode was anodically polarized at 2.0 V, anodic dissolution of Al electrode occurred to give aluminum ions, which reacted with nitride ions in the melt to produce AlN particles (1-5 {mu}m of diameter) of wurtzite structure.

  8. Investigation of different mechanisms of GaN growth induced on AlN and GaN nucleation layers

    International Nuclear Information System (INIS)

    Tasco, V.; Campa, A.; Tarantini, I.; Passaseo, A.; Gonzalez-Posada, F.; Munoz, E.; Redondo-Cubero, A.; Lorenz, K.; Franco, N.

    2009-01-01

    The evolution of GaN growth on AlN and GaN nucleation layers is compared through morphological and structural analyses, including ion beam analysis. By using AlN nucleation layer grown at high temperature, improved crystalline quality is exhibited by 300 nm thin GaN epilayers. GaN (002) x-ray rocking curve as narrow as 168 arc sec and atomic-step surface morphology characterize such a thin GaN film on AlN. Defects are strongly confined into the first 50 nm of growth, whereas a fast laterally coherent growth is observed when increasing thickness, as an effect of high temperature AlN surface morphology and Ga adatom dynamics over this template

  9. Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

    Directory of Open Access Journals (Sweden)

    Shuo-Wei Chen

    2016-04-01

    Full Text Available The crystal quality, electrical and optical properties of GaN based light emitting diodes (LEDs with ex-situ sputtered physical vapor deposition (PVD aluminum nitride (AlN nucleation layers were investigated. It was found that the crystal quality in terms of defect density and x-ray diffraction linewidth was greatly improved in comparison to LEDs with in-situ low temperature GaN nucleation layer. The light output power was 3.7% increased and the reverse bias voltage of leakage current was twice on LEDs with ex-situ PVD AlN nucleation layers. However, larger compressive strain was discovered in LEDs with ex-situ PVD AlN nucleation layers. The study shows the potential and constrain in applying ex-situ PVD AlN nucleation layers to fabricate high quality GaN crystals in various optoelectronics.

  10. The role of Si as surfactant and donor in molecular-beam epitaxy of AlN

    International Nuclear Information System (INIS)

    Lebedev, V.; Morales, F.M.; Romanus, H.; Krischok, S.; Ecke, G.; Cimalla, V.; Himmerlich, M.; Stauden, T.; Cengher, D.; Ambacher, O.

    2005-01-01

    The growth of Si-doped AlN(0001) thin films on Al 2 O 3 (0001) substrates by plasma-induced molecular-beam epitaxy is reported. We have found that Si positively affects the epitaxy being an effective surfactant for AlN growth with a remarkable impact on the crystal quality. It was proven that the characteristic surface reconstruction sequences frequently related to the Al adatoms are obviously Si induced on AlN(0001) surfaces. It was also observed that heavy doping conditions result in volume segregation of Si on the threading dislocation network and in the formation of an amorphous (AlO)(SiO)N cap layer caused by surface oxidation of the accumulated Al and segregated Si. The electron affinity was measured to be smaller than 0.5 eV on the clean AlN surface after removing of the cap layer using Ar + sputtering

  11. Atomic layer deposition of AlN for thin membranes using trimethylaluminum and H2/N2 plasma

    International Nuclear Information System (INIS)

    Goerke, Sebastian; Ziegler, Mario; Ihring, Andreas; Dellith, Jan; Undisz, Andreas; Diegel, Marco; Anders, Solveig; Huebner, Uwe; Rettenmayr, Markus; Meyer, Hans-Georg

    2015-01-01

    Highlights: • AlN films grown at 150 °C by ALD using trimethylaluminum and H 2 /N 2 -plasma. • Nearly stoichiometric AlN films (ratio Al:N = 0.938), polycrystalline by XRD/TEM. • Refractive index of n = 1.908 and low thermal conductivity of κ = 1.66 W/(m K). • Free-standing AlN membranes mechanically stable and buckling free (tensile strain). • Membrane patterning by focused ion beam etching possible. - Abstract: Aluminum nitride (AlN) thin films with thicknesses from 20 to 100 nm were deposited on silicon, amorphous silica, silicon nitride, and vitreous carbon by plasma enhanced atomic layer deposition (PE-ALD). Trimethylaluminum (TMA) and a H 2 /N 2 plasma mixture were used as precursors. We investigated the influence of deposition temperature and plasma parameters on the growth characteristics and the film properties of AlN. Stable PE-ALD growth conditions were obtained from 150 °C to the highest tested temperature of 300 °C. The growth rate, refractive index, and thickness homogeneity on 4″ wafers were determined by spectroscopic ellipsometry. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) were carried out to analyze crystallinity and composition of the films. Furthermore, the thermal conductivity and the film stress were determined. The stress was sufficiently low to fabricate mechanically stable free-standing AlN membranes with lateral dimensions of up to 2.2 × 2.2 mm 2 . The membranes were patterned with focused ion beam etching. Thus, these AlN membranes qualify as dielectric support material for a variety of potential applications

  12. Band alignment of HfO{sub 2}/AlN heterojunction investigated by X-ray photoelectron spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ye, Gang [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Wang, Hong, E-mail: ewanghong@ntu.edu.sg [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); CNRS-International-NTU-THALES Research Alliances/UMI 3288, 50 Nanyang Drive, Singapore 637553 (Singapore); Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), Singapore 117608 (Singapore)

    2016-04-18

    The band alignment between AlN and Atomic-Layer-Deposited (ALD) HfO{sub 2} was determined by X-ray photoelectron spectroscopy (XPS). The shift of Al 2p core-levels to lower binding energies with the decrease of take-off angles θ indicated upward band bending occurred at the AlN surface. Based on the angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ΔE{sub V} of 0.4 ± 0.2 eV at HfO{sub 2}/AlN interface was determined by taking AlN surface band bending into account. By taking the band gap of HfO{sub 2} and AlN as 5.8 eV and 6.2 eV, respectively, a type-II band line-up was found between HfO{sub 2} and AlN.

  13. Memory and Electrical Properties of (100-Oriented AlN Thin Films Prepared by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Maw-Shung Lee

    2014-01-01

    Full Text Available The (100-oriented aluminum nitride (AlN thin films were well deposited onto p-type Si substrate by radio frequency (RF magnetron sputtering method. The optimal deposition parameters were the RF power of 350 W, chamber pressure of 9 mTorr, and nitrogen concentration of 50%. Regarding the physical properties, the microstructure of as-deposited (002- and (100-oriented AlN thin films were obtained and compared by XRD patterns and TEM images. For electrical properties analysis, we found that the memory windows of (100-oriented AlN thin films are better than those of (002-oriented thin films. Besides, the interface and interaction between the silicon and (100-oriented AlN thin films was serious important problem. Finally, the current transport models of the as-deposited and annealed (100-oriented AlN thin films were also discussed. From the results, we suggested and investigated that large memory window of the annealed (100-oriented AlN thin films was induced by many dipoles and large electric field applied.

  14. Two types of SDR recognised in pre-stack velocity analysis of ultra-long-offset seismic reflection data in the South Atlantic

    Science.gov (United States)

    Collier, J.; McDermott, C.; Lonergan, L.; McDermott, K.; Bellingham, P.

    2017-12-01

    Our understanding of continental breakup at volcanic margins has lagged behind that of non-volcanic margins in recent years. This is largely due to seismic imaging problems caused by the presence of thick packages of Seaward-Dipping Reflectors (SDRs) in the continent-ocean transition zone. These packages consist of interbedded tholeiitic lava flows, volcanic tuffs and terrestrial sediment that results in scattering, peg-leg multiples and defocusing of seismic energy. Here we analyse three ultra-long-offset (10.2 km), wide-bandwidth (5-100 Hz) seismic reflection profiles acquired by ION-GXT offshore South America during 2009-12 to gain new insights into the velocity structure of the SDRs and hence pattern of magmatism during continental breakup. We observe two seismic velocity patterns within the SDRs. The most landward packages show high velocity anomaly "bulls-eyes" of up to 1 km s-1. These highs occur where the stacked section shows them to thicken at the down-dip end of individual packages that are bounded by faults. All lines show 5-6 velocity highs spaced approximately 10 km apart. We interpret the velocity bulls-eyes as depleted mafic or ultramafic bodies that fed the sub-aerial tholeiitic lava flows during continental stretching. Similar relationships have been observed in outcrop onshore but have not been previously demonstrated in seismic data. The bulls-eye packages pass laterally into SDR packages that show no velocity highs. These packages are not associated with faulting and become more extensive going north towards the impact point of the Tristan da Cunha hotspot. This second type of SDR coincides with linear magnetic anomalies. We interpret these SDRs as the products of sub-aerial oceanic spreading similar to those seen on Iceland and described in the classic "Hinz model" and marine geophysical literature. Our work demonstrates that these SDRs are preceded by ones generated during an earlier phase of mechanical thinning of the continental crust. The

  15. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia; Bouzidi, Mouhamed; Touré , Alhousseynou; Gerhard, Marina; Halidou, Ibrahim; Chine, Zied; El Jani, Belgacem; Shakfa, Mohammad Khaled

    2016-01-01

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  16. Luminescence dynamics in AlGaN with AlN content of 20%

    KAUST Repository

    Soltani, Sonia

    2016-12-15

    Optical properties and carrier dynamics of an AlGaN layer with an AlN content of 20% have been studied using time-resolved photoluminescence (TR-PL). Despite the high density of defects due to the relatively high AlN content, an intense PL emission from the sample has been detected. Low-temperature PL spectra exhibit several features, accompanied by a strong emission-wavelength dependence of the PL decay time. A significant red-shift of more than 200 meV from the band edge is recorded for the PL emission from localized states. Temperature-dependent PL spectra of the sample are dominated by the emission from localized states and, furthermore, show a relatively slight decrease by almost an order of magnitude with increasing temperature from 45 to 300 K. Our observations indicate strong, spatial localization effects of carriers, resulting in an increase in the radiative recombination rate.

  17. AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Dallaeva, Dinara, E-mail: dinara.dallaeva@yandex.ru [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic); Ţălu, Ştefan [Technical University of Cluj-Napoca, Faculty of Mechanical Engineering, Department of AET, Discipline of Descriptive Geometry and Engineering Graphics, 103-105 B-dul Muncii Street, Cluj-Napoca 400641, Cluj (Romania); Stach, Sebastian [University of Silesia, Faculty of Computer Science and Materials Science, Institute of Informatics, Department of Biomedical Computer Systems, ul. Będzińska 39, 41-205 Sosnowiec (Poland); Škarvada, Pavel; Tománek, Pavel; Grmela, Lubomír [Brno University of Technology, Faculty of Electrical Engineering and Communication, Physics Department, Technická 8, 616 00 Brno (Czech Republic)

    2014-09-01

    Graphical abstract: - Highlights: • We determined the complexity of 3D surface roughness of aluminum nitride layers. • We used atomic force microscopy and analyzed their fractal geometry. • We determined the fractal dimension of surface roughness of aluminum nitride layers. • We determined the dependence of layer morphology on substrate temperature. - Abstract: The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis)

  18. CVD of SiC and AlN using cyclic organometallic precursors

    Science.gov (United States)

    Interrante, L. V.; Larkin, D. J.; Amato, C.

    1992-01-01

    The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

  19. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding; Wu, Feng; Park, Young Jae; Al tahtamouni, T. M.; Li, Kuang-Hui; Alfaraj, Nasir; Detchprohm, Theeradetch; Dupuis, Russell D.; Li, Xiaohang

    2017-01-01

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon's significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  20. An Experimental Study on Heat Conduction and Thermal Contact Resistance for the AlN Flake

    Directory of Open Access Journals (Sweden)

    Huann-Ming Chou

    2013-01-01

    Full Text Available The electrical technology has been a fast development over the past decades. Moreover, the tendency of microelements and dense division multiplex is significantly for the electrical industries. Therefore, the high thermal conductible and electrical insulating device will be popular and important. It is well known that AlN still maintains stablility in the high temperature. This is quite attractive for the research and development department. Moreover, the thermal conduct coefficient of AlN is several times larger than the others. Therefore, it has been thought to play an important role for the radiator of heat source in the future. Therefore, this paper is focused on the studies of heat conduction and thermal contact resistance between the AlN flake and the copper specimens. The heating temperatures and the contact pressures were selected as the experimental parameters. According to the experimental results, the materials are soft and the real contact areas between the interfaces significantly increase under higher temperatures. As a result, the thermal contact resistance significantly decreases and the heat transfer rate increases with increasing the heating temperature or the contact pressures.

  1. Structural characterization of AlN films synthesized by pulsed laser deposition

    International Nuclear Information System (INIS)

    Szekeres, A.; Fogarassy, Zs.; Petrik, P.; Vlaikova, E.; Cziraki, A.; Socol, G.; Ristoscu, C.; Grigorescu, S.; Mihailescu, I.N.

    2011-01-01

    We obtained AlN thin films by pulsed laser deposition (PLD) from a polycrystalline AlN target using a pulsed KrF* excimer laser source (248 nm, 25 ns, intensity of ∼4 x 10 8 W/cm 2 , repetition rate 3 Hz, 10 J/cm 2 laser fluence). The target-Si substrate distance was 5 cm. Films were grown either in vacuum (10 -4 Pa residual pressure) or in nitrogen at a dynamic pressure of 0.1 and 10 Pa, using a total of 20,000 subsequent pulses. The films structure was characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectral ellipsometry (SE). Our TEM and XRD studies showed a strong dependence of the film structure on the nitrogen content in the ambient gas. The films deposited in vacuum exhibited a high quality polycrystalline structure with a hexagonal phase. The crystallite growth proceeds along the c-axis, perpendicular to the substrate surface, resulting in a columnar and strongly textured structure. The films grown at low nitrogen pressure (0.1 Pa) were amorphous as seen by TEM and XRD, but SE data analysis revealed ∼1.7 vol.% crystallites embedded in the amorphous AlN matrix. Increasing the nitrogen pressure to 10 Pa promotes the formation of cubic (≤10 nm) crystallites as seen by TEM but their density was still low to be detected by XRD. SE data analysis confirmed the results obtained from the TEM and XRD observations.

  2. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    International Nuclear Information System (INIS)

    Perez, J A; Riascos, H; Caicedo, J C; Cabrera, G; Yate, L

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser (λ = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  3. Influence of TMAl preflow on AlN epitaxy on sapphire

    KAUST Repository

    Sun, Haiding

    2017-05-12

    The trimethylaluminum (TMAl) preflow process has been widely applied on sapphire substrates prior to growing Al-polar AlN films by metalorganic chemical vapor deposition. However, it has been unclear how the TMAl preflow process really works. In this letter, we reported on carbon\\'s significance in the polarity and growth mode of AlN films due to the TMAl preflow. Without the preflow, no trace of carbon was found at the AlN/sapphire interface and the films possessed mixed Al- and N-polarity. With the 5 s preflow, carbon started to precipitate due to the decomposition of TMAl, forming scattered carbon-rich clusters which were graphitic carbon. It was discovered that the carbon attracted surrounding oxygen impurity atoms and consequently suppressed the formation of AlxOyNz and thus N-polarity. With the 40 s preflow, the significant presence of carbon clusters at the AlN/sapphire interface was observed. While still attracting oxygen and preventing the N-polarity, the carbon clusters served as randomly distributed masks to further induce a 3D growth mode for the AlN growth. The corresponding epitaxial growth mode change is discussed.

  4. Mechanical and Thermophysical Properties of Cubic Rock-Salt AlN Under High Pressure

    Science.gov (United States)

    Lebga, Noudjoud; Daoud, Salah; Sun, Xiao-Wei; Bioud, Nadhira; Latreche, Abdelhakim

    2018-03-01

    Density functional theory, density functional perturbation theory, and the Debye model have been used to investigate the structural, elastic, sound velocity, and thermodynamic properties of AlN with cubic rock-salt structure under high pressure, yielding the equilibrium structural parameters, equation of state, and elastic constants of this interesting material. The isotropic shear modulus, Pugh ratio, and Poisson's ratio were also investigated carefully. In addition, the longitudinal, transverse, and average elastic wave velocities, phonon contribution to the thermal conductivity, and interesting thermodynamic properties were predicted and analyzed in detail. The results demonstrate that the behavior of the elastic wave velocities under increasing hydrostatic pressure explains the hardening of the corresponding phonons. Based on the elastic stability criteria under pressure, it is found that AlN with cubic rock-salt structure is mechanically stable, even at pressures up to 100 GPa. Analysis of the Pugh ratio and Poisson's ratio revealed that AlN with cubic rock-salt structure behaves in brittle manner.

  5. Optical Properties Dependence with Gas Pressure in AlN Films Deposited by Pulsed Laser Ablation

    Energy Technology Data Exchange (ETDEWEB)

    Perez, J A; Riascos, H [Departamento de Fisica, Universidad Tecnologica de Pereira, Grupo plasma Laser y Aplicaciones A.A 097 (Colombia); Caicedo, J C [Grupo pelIculas delgadas, Universidad del Valle, Cali (Colombia); Cabrera, G; Yate, L, E-mail: jcaicedoangulo@gmail.com [Department de Fisica Aplicada i Optica, Universitat de Barcelona, Catalunya (Spain)

    2011-01-01

    AlN films were deposited by pulsed laser deposition technique (PLD) using an Nd: YAG laser ({lambda} = 1064 nm). The films were deposited in a nitrogen atmosphere as working gas; the target was an aluminum high purity (99.99%). The films were deposited with a laser fluence of 7 J/cm2 for 10 minutes on silicon (100) substrates. The substrate temperature was 300 deg. C and the working pressure was varied from 3 mtorr to 11 mtorr. The thickness measured by profilometer was 150 nm for all films. The crystallinity was observed via XRD pattern, the morphology and composition of the films were studied using scanning electron microscopy (SEM) and Energy Dispersive X-ray analysis (EDX), respectively. The optical reflectance spectra and color coordinates of the films were obtained by optical spectral reflectometry technique in the range of 400 cm-1- 900 cm-1 by an Ocean Optics 2000 spectrophotometer. In this work, a clear dependence of the reflectance, dominant wavelength and color purity was found in terms of the applied pressure to the AlN films. A reduction in reflectance of about 55% when the pressure was increased from 3 mtorr to 11 mtorr was observed. This paper deals with the formation of AlN thin films as promising materials for the integration of SAW devices on Si substrates due to their good piezoelectric properties and the possibility of deposition at low temperature compatible with the manufacturing of Si integrated circuits.

  6. Optical, Structural and Paramagnetic Properties of Eu-Doped Ternary Sulfides ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y

    Directory of Open Access Journals (Sweden)

    Vítězslav Jarý

    2015-10-01

    Full Text Available Eu-doped ternary sulfides of general formula ALnS2 (A = Na, K, Rb; Ln = La, Gd, Lu, Y are presented as a novel interesting material family which may find usage as X-ray phosphors or solid state white light emitting diode (LED lighting. Samples were synthesized in the form of transparent crystalline hexagonal platelets by chemical reaction under the flow of hydrogen sulfide. Their physical properties were investigated by means of X-ray diffraction, time-resolved photoluminescence spectroscopy, electron paramagnetic resonance, and X-ray excited fluorescence. Corresponding characteristics, including absorption, radioluminescence, photoluminescence excitation and emission spectra, and decay kinetics curves, were measured and evaluated in a broad temperature range (8–800 K. Calculations including quantum local crystal field potential and spin-Hamiltonian for a paramagnetic particle in D3d local symmetry and phenomenological model dealing with excited state dynamics were performed to explain the experimentally observed features. Based on the results, an energy diagram of lanthanide energy levels in KLuS2 is proposed. Color model xy-coordinates are used to compare effects of dopants on the resulting spectrum. The application potential of the mentioned compounds in the field of white LED solid state lighting or X-ray phosphors is thoroughly discussed.

  7. Superconductivity in nanowires

    CERN Document Server

    Bezryadin, Alexey

    2012-01-01

    The importance and actuality of nanotechnology is unabated and will be for years to come. A main challenge is to understand the various properties of certain nanostructures, and how to generate structures with specific properties for use in actual applications in Electrical Engineering and Medicine.One of the most important structures are nanowires, in particular superconducting ones. They are highly promising for future electronics, transporting current without resistance and at scales of a few nanometers. To fabricate wires to certain defined standards however, is a major challenge, and so i

  8. Optical Binding of Nanowires

    Czech Academy of Sciences Publication Activity Database

    Simpson, Stephen Hugh; Zemánek, Pavel; Marago, O.M.; Jones, P.H.; Hanna, S.

    2017-01-01

    Roč. 17, č. 6 (2017), s. 3485-3492 ISSN 1530-6984 R&D Projects: GA ČR GB14-36681G Grant - others:AV ČR(CZ) CNR-16-12 Program:Bilaterální spolupráce Institutional support: RVO:68081731 Keywords : optical binding nanowires * Brownian motion * self-organization * non-equilibrium thermodynamics * non-equilibrium steady state * spin-orbit coupling * emergent phenomena Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 12.712, year: 2016

  9. Contact planarization of ensemble nanowires

    Science.gov (United States)

    Chia, A. C. E.; LaPierre, R. R.

    2011-06-01

    The viability of four organic polymers (S1808, SC200, SU8 and Cyclotene) as filling materials to achieve planarization of ensemble nanowire arrays is reported. Analysis of the porosity, surface roughness and thermal stability of each filling material was performed. Sonication was used as an effective method to remove the tops of the nanowires (NWs) to achieve complete planarization. Ensemble nanowire devices were fully fabricated and I-V measurements confirmed that Cyclotene effectively planarizes the NWs while still serving the role as an insulating layer between the top and bottom contacts. These processes and analysis can be easily implemented into future characterization and fabrication of ensemble NWs for optoelectronic device applications.

  10. Interactions between semiconductor nanowires and living cells.

    Science.gov (United States)

    Prinz, Christelle N

    2015-06-17

    Semiconductor nanowires are increasingly used for biological applications and their small dimensions make them a promising tool for sensing and manipulating cells with minimal perturbation. In order to interface cells with nanowires in a controlled fashion, it is essential to understand the interactions between nanowires and living cells. The present paper reviews current progress in the understanding of these interactions, with knowledge gathered from studies where living cells were interfaced with vertical nanowire arrays. The effect of nanowires on cells is reported in terms of viability, cell-nanowire interface morphology, cell behavior, changes in gene expression as well as cellular stress markers. Unexplored issues and unanswered questions are discussed.

  11. Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kruse, J. E.; Doundoulakis, G. [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Lymperakis, L. [Max-Planck-Institut für Eisenforschung, Max-Planck-Straße 1, 40237 Düsseldorf (Germany); Eftychis, S.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Department of Physics, University of Crete, P. O. Box 2208, 71003 Heraklion (Greece); Adikimenakis, A.; Tsagaraki, K.; Androulidaki, M.; Konstantinidis, G. [Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion (Greece); Olziersky, A.; Dimitrakis, P.; Ioannou-Sougleridis, V.; Normand, P. [Institute of Nanoscience and Nanotechnology, NCSR Demokritos, Patriarchou Grigoriou and Neapoleos 27, 15310 Aghia Paraskevi, Athens (Greece); Koukoula, T.; Kehagias, Th.; Komninou, Ph. [Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki (Greece)

    2016-06-14

    We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well as numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.

  12. Electric Conductivity of Phosphorus Nanowires

    International Nuclear Information System (INIS)

    Jing-Xiang, Zhang; Hui, Li; Xue-Qing, Zhang; Kim-Meow, Liew

    2009-01-01

    We present the structures and electrical transport properties of nanowires made from different strands of phosphorus chains encapsulated in carbon nanotubes. Optimized by density function theory, our results indicate that the conductance spectra reveal an oscillation dependence on the size of wires. It can be seen from the density of states and current-voltage curves that the structure of nanowires affects their properties greatly. Among them, the DNA-like double-helical phosphorus nanowire exhibits the distinct characteristic of an approximately linear I – V relationship and has a higher conductance than others. The transport properties of phosphorus nanowires are highly correlated with their microstructures. (condensed matter: structure, mechanical and thermal properties)

  13. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Rungger, I.; Sanvito, S.; Schwingenschlö gl, Udo

    2016-01-01

    for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we

  14. Biotemplated Synthesis of PZT Nanowires

    Science.gov (United States)

    2013-11-25

    electromechanical coupling coefficient , Y is the Young’s modulus, and Ri is intrinsic resistance. The PZT nanowire- based film is taken to have negligible...robotic actuation, and bioMEMS. Lead zirconate titanate ( PZT ), in particular, has attracted significant attention, owing to its superior...electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with reproducible and well-controlled properties remains a

  15. Silicon nanowires: structure and properties

    International Nuclear Information System (INIS)

    Nezhdanov, A.V.; Mashin, A.I.; Razuvaev, A.G.; Ershov, A.V.; Ignatov, S.K.

    2006-01-01

    An attempt to grow silicon nanowires has been made by electron beam evaporation on highly oriented pyrolytic substrate. Needle-like objects are located along the normal to a substrate (density 2 x 10 11 cm -2 ). For modeling quasi-one-dimensional objects calculations of nuclear structure and energy spectra have been accomplished. A fullerene-like structure Si 24 is proposed as a basic atomic configuration of silicon nanowires [ru

  16. Barrier effect of AlN film in flexible Cu(In,Ga)Se{sub 2} solar cells on stainless steel foil and solar cell

    Energy Technology Data Exchange (ETDEWEB)

    Li, Boyan; Li, Jianjun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Wu, Li [The MOE Key Laboratory of Weak-Light Nonlinear Photonics, School of Physics, Nankai University, Tianjin 300071 (China); Liu, Wei; Sun, Yun [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China); Zhang, Yi, E-mail: yizhang@nankai.edu.cn [Institute of Photo-electronic Thin Film Devices and Technology, Key Laboratory of Photo-electronic Thin Film Devices and Technology of Tianjin, Nankai University, Tianjin 300071 (China)

    2015-04-05

    Highlights: • The adhension between AlN film and Mo are verygood. • AlN film can be effectively used as the barrier of flexible CIGS solar cell on SS substrate. • AlN film is suitable as the insulation barrier of flexible CIGS solar cell on SS substrate. - Abstract: The AlN film deposited by DC magnetron sputtering on stainless steel (SS) foils was used as the barrier in flexible Cu(In,Ga)Se{sub 2} (CIGS) solar cells on stainless steel foil and characterized comprehensively by X-ray diffraction (XRD), scanning electron microscopy (SEM), I–V, and QE measurements study. The study of AlN as insulation barrier in the flexible CIGS solar cell showed that the adhesion strength between the SS foil and the deposited AlN film was very strong even after annealing at high temperature at 530 °C. More importantly, a high resistance of over 10 MΩ was remained with the film with thickness of around 200 nm after annealing. This indicates that the AlN film is suitable as an effective insulation barrier in flexible CIGS solar cells based on SS foil. In addition, the XRD and SEM results showed that the AlN film did not influence the crystal structure of the Mo film which was deposited upon the AlN layer and used as the electrical contact in CIGS solar cells. It was found that the AlN film contributed to an improved crystallinity of the Mo contact layer compared to the bare SS foil. The combined results of secondary ion mass spectrometry, I–V and EQE measurements of the corresponding flexible CIGS solar cells confirmed that 1 μm-thick AlN film could be used as an efficient barrier layer in CIGS solar cells on SS foil.

  17. Microstructure and mechanical properties of stress-tailored piezoelectric AlN thin films for electro-acoustic devices

    Energy Technology Data Exchange (ETDEWEB)

    Reusch, Markus, E-mail: markus.reusch@iaf.fraunhofer.de [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Cherneva, Sabina [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Lu, Yuan; Žukauskaitė, Agnė; Kirste, Lutz; Holc, Katarzyna [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Datcheva, Maria [Institute of Mechanics, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 4, 1113 Sofia (Bulgaria); Stoychev, Dimitar [Institute of Physical Chemistry, Bulgarian Academy of Sciences, Acad. G. Bonchev Str., Bl. 11, 1113 Sofia (Bulgaria); Lebedev, Vadim [Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany); Ambacher, Oliver [Laboratory for Compound Semiconductor Microsystems, IMTEK - Department of Microsystems Engineering, University of Freiburg, Georges-Koehler-Allee 103, 79110 Freiburg (Germany); Fraunhofer Institute for Applied Solid State Physics, Tullastrasse 72, 79108 Freiburg (Germany)

    2017-06-15

    Highlights: • Sputtered AlN thin films with minimized intrinsic stress gradient. • Gradual increase of N{sub 2} concentration during film growth. • No degradation of AlN film properties by changing process conditions. • 2D Raman mapping of nanoindentation area. - Abstract: Nanoindentation measurements along with atomic force microscopy, X-ray diffraction, and residual stress analyses on the basis of Raman measurements have been performed to characterize stress-tailored AlN thin films grown using reactive RF magnetron sputtering. The intrinsic stress gradient caused by the growing in-plane grain size along film thickness was minimized by increasing the N{sub 2} concentration in the Ar/N{sub 2} gas mixture during the growth process. The increase of N{sub 2} concentration did not degrade the device-relevant material properties such as crystallographic orientation, surface morphology, piezoelectric response, or indentation modulus. Due to comparable crystallographic film properties for all investigated samples it was concluded that mainly the AlN crystallites contribute to the mechanical film properties such as indentation modulus and hardness, while the film stress or grain boundaries had only a minor influence. Therefore, by tailoring the stress gradient in the AlN films, device performance, fabrication yield, and the design flexibility of electro-acoustic devices can be greatly improved.

  18. Lattice stability of metastable AlN and wurtzite-to-rock-salt structural transformation by CALPHAD modeling

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yanhui, E-mail: yanhui.z@hotmail.com [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials-Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); High-performance Ceramics Division, Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 110016, Shenyang (China); Franke, Peter; Li, Dajian; Seifert, Hans Jürgen [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials-Applied Materials Physics (IAM-AWP), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2016-12-01

    Reliable lattice stability of cubic AlN with rock-salt structure (rs-AlN) is the prerequisite of accurate thermodynamic modeling of cubic (M, Al)N solid solutions (M = Ti, Zr, Cr etc.). In order to derive the Gibbs energy of metastable rs-AlN, and then its lattice stability, we did the pressure-temperature (P-T) assessment of AlN phases by equations-of-state modeling. Meanwhile, the molar volumes and the heat capacities of wurtzite and rock-salt AlN, as well as the wurtzite-to-rock-salt structural transition at high P&T were successfully incorporated in CALPHAD-type database by integrating thermodynamic data from experiments and ab-initio calculations. These results promise subsequent investigations on phase stabilities and transitions of solid solutions with AlN component and the development of novel multicomponent coatings. - Highlights: • Phase stability investigation for novel multi-component metastable coatings. • Structural transition at high temperature and high pressure. • Integrating thermodynamic data from ab-initio calculations and experiments. • Thermal expansion, isothermal compressibility and heat capacity of w-AlN and rs-AlN.

  19. Electrochemically grown rough-textured nanowires

    International Nuclear Information System (INIS)

    Tyagi, Pawan; Postetter, David; Saragnese, Daniel; Papadakis, Stergios J.; Gracias, David H.

    2010-01-01

    Nanowires with a rough surface texture show unusual electronic, optical, and chemical properties; however, there are only a few existing methods for producing these nanowires. Here, we describe two methods for growing both free standing and lithographically patterned gold (Au) nanowires with a rough surface texture. The first strategy is based on the deposition of nanowires from a silver (Ag)-Au plating solution mixture that precipitates an Ag-Au cyanide complex during electrodeposition at low current densities. This complex disperses in the plating solution, thereby altering the nanowire growth to yield a rough surface texture. These nanowires are mass produced in alumina membranes. The second strategy produces long and rough Au nanowires on lithographically patternable nickel edge templates with corrugations formed by partial etching. These rough nanowires can be easily arrayed and integrated with microscale devices.

  20. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  1. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Gkionis, Konstantinos; Rungger, Ivan; Sanvito, Stefano; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  2. A silicon nanowire heater and thermometer

    Science.gov (United States)

    Zhao, Xingyan; Dan, Yaping

    2017-07-01

    In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

  3. Controlling nanowire emission profile using conical taper

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    2008-01-01

    The influence of a conical taper on nanowire light emission is studied. For nanowires with divergent output beams, the introduction of tapers improves the emission profile and increase the collection efficiency of the detection optics....

  4. Semiconducting silicon nanowires for biomedical applications

    CERN Document Server

    Coffer, JL

    2014-01-01

    Biomedical applications have benefited greatly from the increasing interest and research into semiconducting silicon nanowires. Semiconducting Silicon Nanowires for Biomedical Applications reviews the fabrication, properties, and applications of this emerging material. The book begins by reviewing the basics, as well as the growth, characterization, biocompatibility, and surface modification, of semiconducting silicon nanowires. It goes on to focus on silicon nanowires for tissue engineering and delivery applications, including cellular binding and internalization, orthopedic tissue scaffol

  5. Electrochemical synthesis of highly crystalline copper nanowires

    International Nuclear Information System (INIS)

    Kaur, Amandeep; Gupta, Tanish; Kumar, Akshay; Kumar, Sanjeev; Singh, Karamjeet; Thakur, Anup

    2015-01-01

    Copper nanowires were fabricated within the pores of anodic alumina template (AAT) by template synthesis method at pH = 2.9. X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to investigate the structure, morphology and composition of fabricated nanowires. These characterizations revealed that the deposited copper nanowires were highly crystalline in nature, dense and uniform. The crystalline copper nanowires are promising in application of future nanoelectronic devices and circuits

  6. From dopyballs to nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Smalley, R E [Rice Quantum Inst. and Depts. of Chemistry and Physics, Rice Univ., Houston, TX (United States)

    1993-04-19

    Consideration of the factors involved in the production of fullerene nanotubes in carbon arcs leads to the notion that a high electric field may be the critical factor that causes the tubes to grow. This thought then leads to a suggestion that it may be possible to grow continuous fullerene fibers many centimeters in length by an electric-field-and-laser induced pyrolysis of gas phase hydrocarbons of fullerenes on the tip of the growing fiber as it extends out from its place of attachment on a high voltage needle. Use of metal- or boron-doped fullerenes (dopyballs) in such an apparatus may lead to the production of doped fullerene fiber nanowires of high strength and conductivity. (orig.)

  7. Indium Arsenide Nanowires

    DEFF Research Database (Denmark)

    Madsen, Morten Hannibal

    -ray diffraction. InAs NWs can be used in a broad range of applications, including detectors, high speed electronics and low temperature transport measurements, but in this thesis focus will be put on biological experiments on living cells. Good control of Au-assisted InAs NW growth has been achieved......This thesis is about growth of Au-assisted and self-assisted InAs nanowires (NWs). The wires are synthesized using a solid source molecular beam epitaxy (MBE) system and characterized with several techniques including scanning electron microscopy (SEM), transmission electron microscopy (TEM) and x...... by a systematic study to optimize the growth conditions; first the Au deposition, then the growth temperature and finally the beam fluxes. For further control of the growth, Au droplets have been positioned with electron beam lithography and large scale arrays with a > 99 % yield have been made on 2 inch...

  8. Resonance of curved nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Calabri, L [CNR-INFM-National Research Center on nanoStructures and bioSystems at Surfaces (S3), Via Campi 213/a, 41100 Modena (Italy); Pugno, N [Department of Structural Engineering and Geotechnics, Politecnico di Torino, Turin (Italy); Ding, W [Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States); Ruoff, R S [Department of Mechanical Engineering, Northwestern University, Evanston, IL 60208-3111 (United States)

    2006-08-23

    The effects of non-ideal experimental configuration on the mechanical resonance of boron (B) nanowires (NWs) were studied to obtain the corrected value for the Young's modulus. The following effects have been theoretically considered: (i) the presence of intrinsic curvature (ii) non-ideal clamps (iii) spurious masses (iv) coating layer, and (v) large displacements. An energy-based analytical analysis was developed to treat such effects and their interactions. Here, we focus on treating the effect of the intrinsic curvature on the mechanical resonance. The analytical approach has been confirmed by numerical FEM analysis. A parallax method was used to obtain the three-dimensional geometry of the NW.

  9. Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

    Science.gov (United States)

    Meng, Fei; Estruga, Marc; Forticaux, Audrey; Morin, Stephen A; Wu, Qiang; Hu, Zheng; Jin, Song

    2013-12-23

    Stacking faults are an important class of crystal defects commonly observed in nanostructures of close packed crystal structures. They can bridge the transition between hexagonal wurtzite (WZ) and cubic zinc blende (ZB) phases, with the most known example represented by the "nanowire (NW) twinning superlattice". Understanding the formation mechanisms of stacking faults is crucial to better control them and thus enhance the capability of tailoring physical properties of nanomaterials through defect engineering. Here we provide a different perspective to the formation of stacking faults associated with the screw dislocation-driven growth mechanism of nanomaterials. With the use of NWs of WZ aluminum nitride (AlN) grown by a high-temperature nitridation method as the model system, dislocation-driven growth was first confirmed by transmission electron microscopy (TEM). Meanwhile numerous stacking faults and associated partial dislocations were also observed and identified to be the Type I stacking faults and the Frank partial dislocations, respectively, using high-resolution TEM. In contrast, AlN NWs obtained by rapid quenching after growth displayed no stacking faults or partial dislocations; instead many of them had voids that were associated with the dislocation-driven growth. On the basis of these observations, we suggest a formation mechanism of stacking faults that originate from dislocation voids during the cooling process in the syntheses. Similar stacking fault features were also observed in other NWs with WZ structure, such as cadmium sulfide (CdS) and zinc oxide (ZnO).

  10. Corrosion detection of nanowires by magnetic sensors

    KAUST Repository

    Kosel, Jü rgen; Amara, Selma; Ivanov, Iurii; Blanco, Mario

    2017-01-01

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  11. Corrosion detection of nanowires by magnetic sensors

    KAUST Repository

    Kosel, Jürgen

    2017-10-05

    Disclosed are various embodiments related to a corrosion detection device for detecting corrosive environments. A corrosion detection device comprises a magnetic sensor and at least one magnetic nanowire disposed on the magnetic sensor. The magnetic sensor is configured to detect corrosion of the one or more magnetic nanowires based at least in part on a magnetic field of the one or more magnetic nanowires.

  12. Occurrence and elimination of in-plane misoriented crystals in AlN epilayers on sapphire via pre-treatment control

    International Nuclear Information System (INIS)

    Wang Hu; Xiong Hui; Wu Zhi-Hao; Yu Chen-Hui; Tian Yu; Dai Jiang-Nan; Fang Yan-Yan; Zhang Jian-Bao; Chen Chang-Qing

    2014-01-01

    AlN epilayers are grown directly on sapphire (0001) substrates each of which has a low temperature AlN nucleation layer. The effects of pretreatments of sapphire substrates, including exposures to NH 3 /H 2 and to H 2 only ambients at different temperatures, before the growth of AlN epilayers is investigated. In-plane misoriented crystals occur in N-polar AlN epilayers each with pretreatment in a H 2 only ambient, and are characterized by six 60°-apart peaks with splits in each peak in (101-bar 2) phi scan and two sets of hexagonal diffraction patterns taken along the [0001] zone axis in electron diffraction. These misoriented crystals can be eliminated in AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient. AlN epilayers by the pretreatment of sapphire substrates in the NH 3 /H 2 ambient are Al-polar. Our results show the pretreatments and the nucleation layers are responsible for the polarities of the AlN epilayers. We ascribe these results to the different strain relaxation mechanisms induced by the lattice mismatch of AlN and sapphire. (interdisciplinary physics and related areas of science and technology)

  13. Enhanced Piezoelectric Response of AlN via CrN Alloying

    Science.gov (United States)

    Manna, Sukriti; Talley, Kevin R.; Gorai, Prashun; Mangum, John; Zakutayev, Andriy; Brennecka, Geoff L.; Stevanović, Vladan; Ciobanu, Cristian V.

    2018-03-01

    Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. We report on density functional theory calculations of structure and properties of the Crx Al1 -x N system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in Crx Al1 -x N alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we find that Crx Al1 -x N has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that Crx Al1 -x N is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately 4 times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may position Crx Al1 -x N as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

  14. Enhanced Piezoelectric Response of AlN via CrN Alloying

    Energy Technology Data Exchange (ETDEWEB)

    Manna, Sukriti; Talley, Kevin R.; Gorai, Prashun; Mangum, John; Zakutayev, Andriy; Brennecka, Geoff L.; Stevanović, Vladan; Ciobanu, Cristian V.

    2018-03-01

    Since AlN has emerged as an important piezoelectric material for a wide variety of applications, efforts have been made to increase its piezoelectric response via alloying with transition metals that can substitute for Al in the wurtzite lattice. We report on density functional theory calculations of structure and properties of the CrxAl1-xN system for Cr concentrations ranging from zero to beyond the wurtzite-rocksalt transition point. By studying the different contributions to the longitudinal piezoelectric coefficient, we propose that the physical origin of the enhanced piezoelectricity in CrxAl1-xN alloys is the increase of the internal parameter u of the wurtzite structure upon substitution of Al with the larger Cr ions. Among a set of wurtzite-structured materials, we find that CrxAl1-xN has the most sensitive piezoelectric coefficient with respect to alloying concentration. Based on these results, we propose that CrxAl1-xN is a viable piezoelectric material whose properties can be tuned via Cr composition. We support this proposal by combinatorial synthesis experiments, which show that Cr can be incorporated in the AlN lattice up to 30% before a detectable transition to rocksalt occurs. At this Cr content, the piezoelectric modulus d33 is approximately 4 times larger than that of pure AlN. This finding, combined with the relative ease of synthesis under nonequilibrium conditions, may position CrxAl1-xN as a prime piezoelectric material for applications such as resonators and acoustic wave generators.

  15. Local thermal conductivity of polycrystalline AlN ceramics measured by scanning thermal microscopy and complementary scanning electron microscopy techniques

    International Nuclear Information System (INIS)

    Zhang Yue-Fei; Wang Li; Wei Bin; Ji Yuan; Han Xiao-Dong; Zhang Ze; Heiderhoff, R.; Geinzer, A. K.; Balk, L. J.

    2012-01-01

    The local thermal conductivity of polycrystalline aluminum nitride (AlN) ceramics is measured and imaged by using a scanning thermal microscope (SThM) and complementary scanning electron microscope (SEM) based techniques at room temperature. The quantitative thermal conductivity for the AlN sample is gained by using a SThM with a spatial resolution of sub-micrometer scale through using the 3ω method. A thermal conductivity of 308 W/m·K within grains corresponding to that of high-purity single crystal AlN is obtained. The slight differences in thermal conduction between the adjacent grains are found to result from crystallographic misorientations, as demonstrated in the electron backscattered diffraction. A much lower thermal conductivity at the grain boundary is due to impurities and defects enriched in these sites, as indicated by energy dispersive X-ray spectroscopy. (condensed matter: structural, mechanical, and thermal properties)

  16. Topological insulator nanowires and nanowire hetero-junctions

    Science.gov (United States)

    Deng, Haiming; Zhao, Lukas; Wade, Travis; Konczykowski, Marcin; Krusin-Elbaum, Lia

    2014-03-01

    The existing topological insulator materials (TIs) continue to present a number of challenges to complete understanding of the physics of topological spin-helical Dirac surface conduction channels, owing to a relatively large charge conduction in the bulk. One way to reduce the bulk contribution and to increase surface-to-volume ratio is by nanostructuring. Here we report on the synthesis and characterization of Sb2Te3, Bi2Te3 nanowires and nanotubes and Sb2Te3/Bi2Te3 heterojunctions electrochemically grown in porous anodic aluminum oxide (AAO) membranes with varied (from 50 to 150 nm) pore diameters. Stoichiometric rigid polycrystalline nanowires with controllable cross-sections were obtained using cell voltages in the 30 - 150 mV range. Transport measurements in up to 14 T magnetic fields applied along the nanowires show Aharonov-Bohm (A-B) quantum oscillations with periods corresponding to the nanowire diameters. All nanowires were found to exhibit sharp weak anti-localization (WAL) cusps, a characteristic signature of TIs. In addition to A-B oscillations, new quantization plateaus in magnetoresistance (MR) at low fields (< 0 . 7T) were observed. The analysis of MR as well as I - V characteristics of heterojunctions will be presented. Supported in part by NSF-DMR-1122594, NSF-DMR-1312483-MWN, and DOD-W911NF-13-1-0159.

  17. The influence of ALN-Al gradient material gradient index on ballistic performance

    International Nuclear Information System (INIS)

    Wang Youcong; Liu Qiwen; Li Yao; Shen Qiang

    2013-01-01

    Ballistic performance of the gradient material is superior to laminated material, and gradient materials have different gradient types. Using ls-dyna to simulate the ballistic performance of ALN-AL gradient target plates which contain three gradient index (b = 1, b = 0.5, b = 2). Through Hopkinson bar numerical simulation to the target plate materials, we obtained the reflection stress wave and transmission stress wave state of gradient material to get the best gradient index. The internal stress state of gradient material is simulated by amplification processing of the target plate model. When the gradient index b is equal to 1, the gradient target plate is best of all.

  18. Local lattice environment of indium in GaN, AlN, and InN

    International Nuclear Information System (INIS)

    Penner, J.

    2007-01-01

    After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized

  19. Surface state of GaN after rapid-thermal-annealing using AlN cap-layer

    Energy Technology Data Exchange (ETDEWEB)

    El-Zammar, G., E-mail: georgio.elzammar@univ-tours.fr [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Khalfaoui, W. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Oheix, T. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Yvon, A.; Collard, E. [STMicroelectronics, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France); Cayrel, F.; Alquier, D. [Université François Rabelais, Tours, GREMAN, CNRS UMR 7347, 10 rue Thalès de Milet CS 97155, 37071 Tours Cedex 2 (France)

    2015-11-15

    Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive magnetron sputtering on GaN. • We show the effect of deposition parameters of AlN by reactive magnetron sputtering on the quality of the grown layer. • We demonstrate the efficiency of double cap-layer for GaN protection during high temperature thermal treatments. • We show an efficient selective etch of AlN without damaging GaN surface. - Abstract: Critical issues need to be overcome to produce high performance Schottky diodes on gallium nitride (GaN). To activate dopant, high temperature thermal treatments are required but damage GaN surface where hexagonal pits appear and prevent any device processing. In this paper, we investigated the efficiency of cap-layers on GaN during thermal treatments to avoid degradation. Aluminum nitride (AlN) and silicon oxide (SiO{sub x}) were grown on GaN by direct current reactive magnetron sputtering and plasma-enhanced chemical vapor deposition, respectively. AlN growth parameters were studied to understand their effect on the grown layers and their protection efficiency. Focused ion beam was used to measure AlN layer thickness. Crystalline quality and exact composition were verified using X-ray diffraction and energy dispersive X-ray spectroscopy. Two types of rapid thermal annealing at high temperatures were investigated. Surface roughness and pits density were evaluated using atomic force microscopy and scanning electron microscopy. Cap-layers wet etching was processed in H{sub 3}PO{sub 4} at 120 °C for AlN and in HF (10%) for SiO{sub x}. This work reveals effective protection of GaN during thermal treatments at temperatures as high as 1150 °C. Low surface roughness was obtained. Furthermore, no hexagonal pit was observed on the surface.

  20. Structural characteristics of single crystalline GaN films grown on (111) diamond with AlN buffer

    DEFF Research Database (Denmark)

    Pécz, Béla; Tóth, Lajos; Barna, Árpád

    2013-01-01

    Hexagonal GaN films with the [0001] direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer......, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship [1010]GaN//[110]diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer....

  1. Gold nanowires and the effect of impurities

    Directory of Open Access Journals (Sweden)

    Novaes Frederico

    2006-01-01

    Full Text Available AbstractMetal nanowires and in particular gold nanowires have received a great deal of attention in the past few years. Experiments on gold nanowires have prompted theory and simulation to help answer questions posed by these studies. Here we present results of computer simulations for the formation, evolution and breaking of very thin Au nanowires. We also discuss the influence of contaminants, such as atoms and small molecules, and their effect on the structural and mechanical properties of these nanowires.

  2. Micromagnetic simulations of cylindrical magnetic nanowires

    KAUST Repository

    Ivanov, Yurii P.

    2015-05-27

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain wall types, and state diagrams in cylindrical nanowires of different types and sizes. The results of the hysteresis process in individual nanowires and nanowire arrays also are presented. Modeling results are compared with experimental ones. The chapter also discusses future trends in nanowire applications in relation to simulations, such as current-driven dynamics, spintronics, and spincaloritronics. The main micromagnetic programs are presented and discussed, together with the corresponding links.

  3. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  4. Methods for synthesizing metal oxide nanowires

    Science.gov (United States)

    Sunkara, Mahendra Kumar; Kumar, Vivekanand; Kim, Jeong H.; Clark, Ezra Lee

    2016-08-09

    A method of synthesizing a metal oxide nanowire includes the steps of: combining an amount of a transition metal or a transition metal oxide with an amount of an alkali metal compound to produce a mixture; activating a plasma discharge reactor to create a plasma discharge; exposing the mixture to the plasma discharge for a first predetermined time period such that transition metal oxide nanowires are formed; contacting the transition metal oxide nanowires with an acid solution such that an alkali metal ion is exchanged for a hydrogen ion on each of the transition metal oxide nanowires; and exposing the transition metal oxide nanowires to the plasma discharge for a second predetermined time period to thermally anneal the transition metal oxide nanowires. Transition metal oxide nanowires produced using the synthesis methods described herein are also provided.

  5. Electrically Injected UV-Visible Nanowire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  6. Nanowire failure: long = brittle and short = ductile.

    Science.gov (United States)

    Wu, Zhaoxuan; Zhang, Yong-Wei; Jhon, Mark H; Gao, Huajian; Srolovitz, David J

    2012-02-08

    Experimental studies of the tensile behavior of metallic nanowires show a wide range of failure modes, ranging from ductile necking to brittle/localized shear failure-often in the same diameter wires. We performed large-scale molecular dynamics simulations of copper nanowires with a range of nanowire lengths and provide unequivocal evidence for a transition in nanowire failure mode with change in nanowire length. Short nanowires fail via a ductile mode with serrated stress-strain curves, while long wires exhibit extreme shear localization and abrupt failure. We developed a simple model for predicting the critical nanowire length for this failure mode transition and showed that it is in excellent agreement with both the simulation results and the extant experimental data. The present results provide a new paradigm for the design of nanoscale mechanical systems that demarcates graceful and catastrophic failure. © 2012 American Chemical Society

  7. Diameter-dependent coloration of silver nanowires

    International Nuclear Information System (INIS)

    Stewart, Mindy S; Qiu Chao; Jiang Chaoyang; Kattumenu, Ramesh; Singamaneni, Srikanth

    2011-01-01

    Silver nanowires were synthesized with a green method and characterized with microscopic and diffractometric methods. The correlation between the colors of the nanowires deposited on a solid substrate and their diameters was explored. Silver nanowires that appear similar in color in the optical micrographs have very similar diameters as determined by atomic force microscopy. We have summarized the diameter-dependent coloration for these silver nanowires. An optical interference model was applied to explain such correlation. In addition, microreflectance spectra were obtained from individual nanowires and the observed spectra can be explained with the optical interference theory. This work provides a cheap, quick and simple screening method for studying the diameter distribution of silver nanowires, as well as the diameter variations of individual silver nanowires, without complicated sample preparation.

  8. Influence of metallic surface states on electron affinity of epitaxial AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna, Shibin; Aggarwal, Neha [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Advanced Materials and Devices Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2017-06-15

    The present article investigates surface metallic states induced alteration in the electron affinity of epitaxial AlN films. AlN films grown by plasma-assisted molecular beam epitaxy system with (30% and 16%) and without metallic aluminium on the surface were probed via photoemission spectroscopic measurements. An in-depth analysis exploring the influence of metallic aluminium and native oxide on the electronic structure of the films is performed. It was observed that the metallic states pinned the Fermi Level (FL) near valence band edge and lead to the reduction of electron affinity (EA). These metallic states initiated charge transfer and induced changes in surface and interface dipoles strength. Therefore, the EA of the films varied between 0.6–1.0 eV due to the variation in contribution of metallic states and native oxide. However, the surface barrier height (SBH) increased (4.2–3.5 eV) adversely due to the availability of donor-like surface states in metallic aluminium rich films.

  9. Design and Optimization of AlN based RF MEMS Switches

    Science.gov (United States)

    Hasan Ziko, Mehadi; Koel, Ants

    2018-05-01

    Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

  10. Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

    KAUST Repository

    Singh, Shivkant

    2018-05-17

    The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

  11. Respiration and Heartbeat Measurement for Sleep Monitoring Using a Flexible AlN Piezoelectric Film Sensor

    Directory of Open Access Journals (Sweden)

    Nan BU

    2009-11-01

    Full Text Available Respiratory and heartbeat monitoring during sleep provides basic physiological information for diagnosis of sleep disorders. This paper proposes a new method for non-invasive and unconstrained measurement of respiration and heartbeat during sleep. A flexible piezoelectric film sensor made of aluminum nitride (AlN material is used for signal acquisition. The total thickness of this sensor is less than 40 μm; the thin thickness makes it imperceptible when integrated into a bed. In addition, the AlN film sensor has good sensitivity, so that pressure fluctuation due to respiration and heartbeat can be measured when a subject is lying on this sensor. The pressure fluctuation measured can be further separated into signals corresponding to respiration and heartbeat, respectively. In the proposed method, the signal separation is achieved using an algorithm based on empirical mode decomposition (EMD. From the experimental results, it was found that respiration and heartbeat signals can be successfully obtained with the proposed method.

  12. GaN growth on silane exposed AlN seed layers

    Energy Technology Data Exchange (ETDEWEB)

    Ruiz-Zepeda, F. [Posgrado en Fisica de Materiales, Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Km. 107 Carret, Tijuana-Ensenada, C.P. 22860, Ensenada, B.C. (Mexico); Contreras, O. [Centro de Ciencias de la Materia Condesada, Universidad Nacional Autonoma de Mexico, Apdo. Postal 356, C.P. 22800, Ensenada, B.C. (Mexico); Dadgar, A.; Krost, A. [Otto-von-Guericke-Universitaet Magdeburg, FNW-IEP, Universitaetsplatz 2, 39106 Magdeburg (Germany)

    2008-07-01

    The microstructure and surface morphology of GaN films grown on AlN seed layers exposed to silane flow has been studied by TEM and AFM. The epilayers were grown on silicon(111) substrates by MOCVD. The AlN seed layer surface was treated at different SiH{sub 4} exposure times prior to the growth of the GaN film. A reduction in the density of threading dislocations is observed in the GaN films and their surface roughness is minimized for an optimal SiH{sub 4} exposure time between 75-90 sec. At this optimal condition a step-flow growth mode of GaN film is predominant. The improvement of the surface and structure quality of the epilayers is observed to be related to an annihilation process of threading dislocations done by SiN{sub x} masking. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Magma transport in sheet intrusions of the Alnö carbonatite complex, central Sweden.

    Science.gov (United States)

    Andersson, Magnus; Almqvist, Bjarne S G; Burchardt, Steffi; Troll, Valentin R; Malehmir, Alireza; Snowball, Ian; Kübler, Lutz

    2016-06-10

    Magma transport through the Earth's crust occurs dominantly via sheet intrusions, such as dykes and cone-sheets, and is fundamental to crustal evolution, volcanic eruptions and geochemical element cycling. However, reliable methods to reconstruct flow direction in solidified sheet intrusions have proved elusive. Anisotropy of magnetic susceptibility (AMS) in magmatic sheets is often interpreted as primary magma flow, but magnetic fabrics can be modified by post-emplacement processes, making interpretation of AMS data ambiguous. Here we present AMS data from cone-sheets in the Alnö carbonatite complex, central Sweden. We discuss six scenarios of syn- and post-emplacement processes that can modify AMS fabrics and offer a conceptual framework for systematic interpretation of magma movements in sheet intrusions. The AMS fabrics in the Alnö cone-sheets are dominantly oblate with magnetic foliations parallel to sheet orientations. These fabrics may result from primary lateral flow or from sheet closure at the terminal stage of magma transport. As the cone-sheets are discontinuous along their strike direction, sheet closure is the most probable process to explain the observed AMS fabrics. We argue that these fabrics may be common to cone-sheets and an integrated geology, petrology and AMS approach can be used to distinguish them from primary flow fabrics.

  14. DLC and AlN thin films influence the thermal conduction of HPLED light

    Science.gov (United States)

    Hsu, Ming Seng; Hsu, Ching Yao; Huang, Jen Wei; Shyu, Feng Lin

    2015-08-01

    Thermal dissipation had an important influence in the effect and life of light emitting diodes (LED) because it enables transfer the heat away from electric device to the aluminum plate that can be used for heat removal. In the industrial processing, the quality of the thermal dissipation decides by the gumming technique between the PCB and aluminum plate. In this study, we fabricated double layer ceramic thin films of diamond like carbon (DLC) and alumina nitride (AlN) by vacuum sputtering soldered the substrate of high power light emitting diodes (HPLED) light to check the heat conduction. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray photoelectron spectroscopy (XPS) patterns reveal those ceramic phases were successfully grown onto the substrate. The work temperatures show DLC and AlN films coating had limited the heat transfer by the lower thermal conductivity of these ceramic films. Obviously, it hadn't transferred heat and limited work temperature of HPLED better than DLC thin film only.

  15. Using Mosaicity to Tune Thermal Transport in Polycrystalline AlN Thin Films

    KAUST Repository

    Singh, Shivkant; Shervin, Shahab; Sun, Haiding; Yarali, Milad; Chen, Jie; Lin, Ronghui; Li, Kuang-Hui; Li, Xiaohang; Ryou, Jae-Hyun; Mavrokefalos, Anastassios

    2018-01-01

    The effect of controlling the c-axis alignment (mosaicity) to the cross-plane thermal transport in textured polycrystalline aluminum nitride (AlN) thin films is experimentally and theoretically investigated. We show that by controlling the sputtering conditions we are able to deposit AlN thin films with varying c-axis grain tilt (mosaicity) from 10° to 0°. Microstructural characterization shows that the films are nearly identical in thickness and grain size, and the difference in mosaicity alters the grain interface quality. This has a significant effect to thermal transport where a thermal conductivity of 4.22 W/mK vs. 8.09 W/mK are measured for samples with tilt angles of 10° vs. 0° respectively. The modified Callaway model was used to fit the theoretical curves to the experimental results using various phonon scattering mechanisms at the grain interface. It was found that using a non-gray model gives an overview of the phonon scattering at the grain boundaries, whereas treating the grain boundary as an array of dislocation lines with varying angle relative to the heat flow, best describes the mechanism of the thermal transport. Lastly, our results show that controlling the quality of the grain interface provides a tuning knob to control thermal transport in polycrystalline materials.

  16. Early stages of interface reactions between AlN and Ti thin films

    CERN Document Server

    Pinkas, M; Froumin, N; Pelleg, J; Dariel, M P

    2002-01-01

    The early stages of interface reactions between AlN and Ti thin films were investigated using x-ray diffractions, Auger electron spectroscopy, cross section transmission electron microscopy (XTEM), and high resolution XTEM. The AlN/Ti bilayers were deposited on a molybdenum substrate using reactive and nonreactive magnetron sputtering techniques. After deposition, the bilayers were heat treated for 1-10 h at 600 deg. C in a nitrogen atmosphere. Decomposition of the AlN layer took place at the AlN/Ti interface and its products, Al and N, reacted with Ti to produce a AlN/Al sub 3 Ti/Ti sub 2 N/Ti sub 3 Al/alpha-(Ti, Al)ss phase sequence. This phase sequence is not consistent with the Ti-Al-N phase diagram and is believed to be the outcome of the particular conditions that prevail in the thin film and correspond to a particular set of kinetic parameters. A model that explains the development of the phase sequence and predicts its evolution after prolonged heat treatments is put forward. The applicability of such...

  17. Growth dynamics of reactive-sputtering-deposited AlN films

    International Nuclear Information System (INIS)

    Auger, M.A.; Vazquez, L.; Sanchez, O.; Jergel, M.; Cuerno, R.; Castro, M.

    2005-01-01

    We have studied the surface kinetic roughening of AlN films grown on Si(100) substrates by dc reactive sputtering within the framework of the dynamic scaling theory. Films deposited under the same experimental conditions for different growth times were analyzed by atomic force microscopy and x-ray diffraction. The AlN films display a (002) preferred orientation. We have found two growth regimes with a crossover time of 36 min. In the first regime, the growth dynamics is unstable and the films present two types of textured domains, well textured and randomly oriented, respectively. In contrast, in the second regime the films are homogeneous and well textured, leading to a relative stabilization of the surface roughness characterized by a growth exponent β=0.37±0.03. In this regime a superrough scaling behavior is found with the following exponents: (i) Global exponents: roughness exponent α=1.2±0.2 and β=0.37±0.03 and coarsening exponent 1/z=0.32±0.05; (ii) local exponents: α loc =1, β loc =0.32±0.01. The differences between the growth modes are found to be related to the different main growth mechanisms dominating their growth dynamics: sticking anisotropy and shadowing, respectively

  18. Effect of AlN doping on the growth morphology of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Singh, N.B.; Jones, E.; Berghmans, A.; Wagner, B.P.; Jelen, E.; McLaughlin, S.; Knuteson, D.J.; Fitelson, M.; King, M.; Kahler, D. [Northrop Grumman Corporation, ES-ATL, Linthicum, MD (United States)

    2009-09-15

    AlN doped SiC films were deposited on on-axis Si-face 4H-SiC(0001) substrates by the physical vapor transport (PVT) method. Thick film in the range of 20 {mu}m range was grown and morphology was characterized. Films were grown by physical vapor deposition (PVD) in a vertical geometry in the nitrogen atmosphere. We observed that nucleation occurred in the form of discs and growth occurred in hexagonal geometry. The X-ray studies showed (001)orientation and full width of half maxima (FWHM) was less than 0.1 indicating good crystallinity. We also observed that film deposited on the carbon crucible had long needles with anisotropic growth very similar to that of pure AlN. Some of the needles grew up to sizes of 200{mu}m in length and 40 to 50 {mu}m in width. It is clear that annealing of SiC-AlN powder or high temperature physical vapor deposition produces similar crystal structure for producing AlN-SiC solid solution. SEM studies indicated that facetted hexagons grew on the top of each other and coarsened and merged to form cm size grains on the substrate. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  20. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  1. Inhalation by design: novel ultra-long-acting β(2)-adrenoreceptor agonists for inhaled once-daily treatment of asthma and chronic obstructive pulmonary disease that utilize a sulfonamide agonist headgroup.

    Science.gov (United States)

    Glossop, Paul A; Lane, Charlotte A L; Price, David A; Bunnage, Mark E; Lewthwaite, Russell A; James, Kim; Brown, Alan D; Yeadon, Michael; Perros-Huguet, Christelle; Trevethick, Michael A; Clarke, Nicholas P; Webster, Robert; Jones, Rhys M; Burrows, Jane L; Feeder, Neil; Taylor, Stefan C J; Spence, Fiona J

    2010-09-23

    A novel series of potent and selective sulfonamide derived β(2)-adrenoreceptor agonists are described that exhibit potential as inhaled ultra-long-acting bronchodilators for the treatment of asthma and chronic obstructive pulmonary disease. Analogues from this series mediate very long-lasting smooth muscle relaxation in guinea pig tracheal strips. The sulfonamide agonist headgroup confers high levels of intrinsic crystallinity that could relate to the acidic sulfonamide motif supporting a zwitterionic form in the solid state. Optimization of pharmacokinetic properties was achieved through targeted introduction of a phenolic moiety to support rapid phase II clearance, thereby minimizing systemic exposure following inhalation and reducing systemically mediated adverse events. Compound 38 (PF-610355) is identified as a clinical candidate from this series, with in vivo duration of action studies confirming its potential for once-daily use in humans. Compound 38 is currently in advanced phase II clinical studies.

  2. A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

    International Nuclear Information System (INIS)

    Xu, Liang; Wang, Lingling; Huang, Weiqing; Xiao, Wenzhi; Xiao, Gang

    2014-01-01

    First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d 0 magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.

  3. The optical properties and applications of AlN thin films prepared by a helicon sputtering system

    CERN Document Server

    Chiu, W Y; Kao, H L; Jeng, E S; Chen, J S; Jaing, C C

    2002-01-01

    AlN thin films were grown on SiO sub 2 /Si and quartz substrates using a helicon sputtering system. The dependence of film quality on growth parameters, such as total sputtering pressure, substrate temperature, and nitrogen concentration has been studied. There is a good correlation of thin film crystallinity addressed by x-ray diffraction (XRD) and spectroscopic ellipsometer. The optimized films exhibit highly oriented, with only (002) peak shown in a theta-2 theta scan XRD pattern, and extremely smooth surface with rms roughness of 2 Aa. The extinction coefficient of the film was 4x10 sup - sup 4 , which is lower than that of AlN films grown by conventional sputtering. Double-layer antireflection (DLAR) coating using AlN and Al sub 3 O sub 3 grown on quartz has been demonstrated. The transmittance of DLAR was high as 96% compared to 93% of bare substrates with the measurement error less than 0.2%. AlN films prepared by Helicon sputtering thus are potential for optical application.

  4. Crystallinity and superconductivity of as-grown MgB2 thin films with AlN buffer layers

    International Nuclear Information System (INIS)

    Tsujimoto, K.; Shimakage, H.; Wang, Z.; Kaya, N.

    2005-01-01

    The effects of aluminum nitride (AlN) buffer layers on the superconducting properties of MgB 2 thin film were investigated. The AlN buffer layers and as-grown MgB 2 thin films were deposited in situ using the multiple-target sputtering system. The best depositing condition for the AlN/MgB 2 bi-layer occurred when the AlN was deposited on c-cut sapphire substrates at 290 deg. C. The crystallinity of the AlN/MgB 2 bi-layer was studied using the XRD φ-scan and it showed that AlN and MgB 2 had the same in-plane alignment rotated at an angle of 30 deg. as compared to c-cut sapphire. The critical temperature of the MgB 2 film was 29.8 K and the resistivity was 50.0 μΩ cm at 40 K

  5. Low-temperature growth of high quality AlN films on carbon face 6H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Myunghee [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Ohta, Jitsuo; Fujioka, Hiroshi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki 213-0012 (Japan); Kobayashi, Atsushi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Oshima, Masaharu [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656 (Japan); Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075 (Japan)

    2008-01-15

    AlN films have been grown on atomically flat carbon face 6H-SiC (000 anti 1) substrates by pulsed laser deposition and their structural properties have been investigated. In-situ reflection high-energy electron diffraction observations have revealed that growth of AlN at 710 C proceeds in a Stranski-Krastanov mode, while typical layer-by-layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X-ray rocking curves for 0004 and 10 anti 12 diffractions of the RT-grown AlN film are 0.05 and 0.07 , respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  6. Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

    Energy Technology Data Exchange (ETDEWEB)

    Alden, D. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany); Guo, W.; Kaess, F.; Bryan, I.; Reddy, P.; Hernandez-Balderrama, Luis H.; Franke, A.; Collazo, R.; Sitar, Z. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kirste, R.; Mita, S. [Adroit Materials, Inc., 2054 Kildaire Farm Rd., Suite 205, Cary, North Carolina 27518 (United States); Troha, T.; Zgonik, M. [Faculty of Mathematics and Physics, University of Ljubljana, Jadranska 19, 1000 Ljubljana (Slovenia); Bagal, A.; Chang, C.-H. [Department of Mechanical and Aerospace Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2016-06-27

    Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor deposition growth of AlN in combination with laser interference lithography was developed for making a nanoscale lateral polarity structure (LPS) with domain size down to 600 nm. The Al-polar and N-polar domains were identified by wet etching the periodic LPS in a potassium hydroxide solution and subsequent scanning electron microscopy (SEM) characterization. Fully coalesced and well-defined vertical interfaces between the adjacent domains were established by cross-sectional SEM. AlN LPSs were mechanically polished and surface roughness with a root mean square value of ∼10 nm over a 90 μm × 90 μm area was achieved. 3.8 μm wide and 650 nm thick AlN LPS waveguides were fabricated. The achieved domain sizes, surface roughness, and waveguides are suitable for second harmonic generation in the UVC spectrum.

  7. AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique.

    Science.gov (United States)

    Liu, Xiao-Yong; Zhao, Sheng-Xun; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Zhang, Chun-Min; Lu, Hong-Liang; Wang, Peng-Fei; Zhang, David Wei

    2015-01-01

    Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

  8. Impact of the AlN seeding layer thickness on GaN orientation on high index Si-substrates

    Energy Technology Data Exchange (ETDEWEB)

    Ravash, Roghaiyeh; Blaesing, Juergen; Veit, Peter; Hempel, Thomas; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg (Germany). FNW/IEP/AHE

    2010-07-01

    Silicon is considered to be a reasonable alternative to substrates such as sapphire and SiC, because of its low price and availability in large diameters. Because of spontaneous and strain induced piezoelectric polarization field along the c-axis, leading to the separation of electrons and holes in quantum wells reducing the recombination efficiency, c-axis oriented GaN-based light emitters have a low efficiency, especially in the longer wavelength region. In order to reduce or eliminate these polarization effects, semi-polar or non-polar GaN-heterostructure is favored. In this work we investigated the growth of GaN applying a low temperature AlN seeding layer with various thicknesses. The impact of the AlN seeding layer on GaN orientation using different Si substrate orientations (e. g. (211), (711), (410), (100)+4.5 off) were investigated by x-ray diffraction measurements in Bragg-Brentano geometry and X-ray pole figure measurements. We found that the thickness of the AlN seeding layer plays a significant role in obtaining different GaN textures. Applying a about 4 nm AlN seeding layer we achieved a single crystalline GaN epilayer on Si (211) with a 18 tilted c-axis orientation. Some of the samples were characterized by scanning electron microscopy and transmission electron microscopy.

  9. Quantum optics with nanowires (Conference Presentation)

    Science.gov (United States)

    Zwiller, Val

    2017-02-01

    Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

  10. Nonpolar a-plane GaN grown on r-plane sapphire using multilayer AlN buffer by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Chiang, C.H.; Chen, K.M.; Wu, Y.H.; Yeh, Y.S.; Lee, W.I.; Chen, J.F.; Lin, K.L.; Hsiao, Y.L.; Huang, W.C.; Chang, E.Y.

    2011-01-01

    Mirror-like and pit-free non-polar a-plane (1 1 -2 0) GaN films are grown on r-plane (1 -1 0 2) sapphire substrates using metalorganic chemical vapor deposition (MOCVD) with multilayer high-low-high temperature AlN buffer layers. The buffer layer structure and film quality are essential to the growth of a flat, crack-free and pit-free a-plane GaN film. The multilayer AlN buffer structure includes a thin low-temperature-deposited AlN (LT-AlN) layer inserted into the high-temperature-deposited AlN (HT-AlN) layer. The results demonstrate that the multilayer AlN buffer structure can improve the surface morphology of the upper a-plane GaN film. The grown multilayer AlN buffer structure reduced the tensile stress on the AlN buffer layers and increased the compressive stress on the a-plane GaN film. The multilayer AlN buffer structure markedly improves the surface morphology of the a-plane GaN film, as revealed by scanning electron microscopy. The effects of various growth V/III ratios was investigated to obtain a-plane GaN films with better surface morphology. The mean roughness of the surface was 1.02 nm, as revealed by atomic force microscopy. Accordingly, the multilayer AlN buffer structure improves the surface morphology and facilitates the complete coalescence of the a-plane GaN layer.

  11. Synthesis of AlN fine particles by surface corona discharge-CVD; Enmen corona hoden CVD ni yoru AlN biryushi no gosei

    Energy Technology Data Exchange (ETDEWEB)

    Oyama, Y.; Chiba, S. [Hokkaido National Industrial Research Institute, Sapporo (Japan); Harima, K> ; Kondo, K.; Shinohara, K. [Hokkaido University, Sapporo (Japan)

    1994-09-15

    With an objective to improve insulating and heat dissipating substrates substituting for the conventional alumina substrates, discussions been given on synthesis of AlN fine particles by means of gaseous phase reaction between AlCl3 and NH3 using surface corona discharge as a reaction exciting source. AIN particles should be highly pure to acquire high-heat conductivity, and fine and uniform particles to obtain dense sinters at low temperatures. The particles obtained by using the present method were amorphous particles having nearly spherical form and smooth surface. The particle diameter depends on the initial concentration of AlCl3, and is proportional to 0.4 square of the concentration. Within the range in the present experiment, the diameters ranged from 208 nm to 431 nm. The particle diameter increased in proportion to 0.2 square of an average gas stagnating time within the plasma generating region. The particle size distribution consisted of highly uniform fine particles having the standard deviation at about the same degree as that in the conventional thermal CVD process. The alumina-based oxygen was removed completely by reduction due to graphite powder, but the re-oxidation during removal of the remaining graphite using combustion had oxygen remained at 7.4% by weight. 16 refs., 7 figs.

  12. Influence of SrF_2-doping in AlN ceramics on scintillation and dosimeter properties

    International Nuclear Information System (INIS)

    Kojima, Kaori; Okada, Go; Fukuda, Kentaro; Yanagida, Takayuki

    2016-01-01

    In this study, we synthesized undoped AlN and SrF_2-doped AlN (AlN-SrF_2) ceramics by Spark Plasma Sintering (SPS), and we characterized their optical, scintillation and dosimeter properties. The prepared undoped AlN ceramic had gray color and visually non-transparent whereas, with an addition of SrF_2, the transparency improved and became translucent. The measured in-line transmittance was approximately 0.2% at wavelengths longer than 500 nm. While the addition of SrF_2 decreased the scintillation intensity, the decay time was significantly fastened, which is a great advantage for fast photon counting-based measurements. Both the thermally-stimulated luminescence (TSL) and optically-stimulated luminescence (OSL) showed good linear response from the milli-gray range to over 10 Gy. The sensitivity seems to decrease by an addition of SrF_2 as it suppresses structural defect centers which are responsible for dosimeter properties. However, the main TSL glow peak position shifts to higher temperature with the addition of SrF_2, which indicates that inclusion of SrF_2 improves the TSL signal stability. - Highlights: • We synthesized undoped and SrF_2-doped AlN ceramics by Spark Plasma Sintering. • We evaluated scintillator and dosimeter properties of undoped and SrF_2-doped AlN. • By doping with SrF_2, the decay time is shortened. • By doping with SrF_2, the stability of TSL and OSL is improved.

  13. Study of the 27Al(n,2,)26Al reaction via accelerator mass spectrometry

    International Nuclear Information System (INIS)

    Wallner, A.

    2000-06-01

    The excitation function for the 27 Al(n,2n) 26 Al reaction is expected to show a strongly non-linear behavior in the neutron-energy region around 14 MeV, the neutron energy in D-T plasmas; thus the production rate of 26 Al (t 1/2 =7.2*10 5 a) in D-T fusion environments can in principle be used to measure the temperature of such plasmas. Existing measurements, however, are strongly discordant. Therefore, a new accurate measurement of the 27 Al(n,2n) 26 Al cross sections in the near threshold region (E n =13.5-14.8 MeV) was performed with the goal to achieve relative cross sections with the highest accuracy possible. In addition, the measurements were also designed to provide good absolute cross-section values, as absolute cross sections are important for radioactive waste predictions. Samples of Al metal were irradiated with neutrons in the energy range near threshold (E th =13.55 MeV) at the Radiuminstitutes of both Vienna and St. Petersburg, and in Tokai-mura, Japan. In Tuebingen irradiations with neutrons of higher energies (17 and 19 MeV) were performed. The amount of 26 Al produced during the irradiations was measured via accelerator mass spectrometry (AMS) at the Vienna Environmental Research Accelerator (VERA). This work represents the first 26 Al measurements for this new facility. With this system, a background as low as 3*10 -15 for 26 Al/ 27 Al isotope ratios was obtained, corresponding to a (n,2n) cross section of 0.04 mb. Utilizing AMS, cross sections with much higher precision and considerably closer to the threshold than in previous investigations could be measured. The prerequisite for its application as a temperature monitor, namely a very well known shape of the excitation function was met. A quantitative prediction of the sensitivity of this method for monitoring the temperature in a D-T fusion plasma was therefore possible. For thermal plasmas temperature changes in the order of 5 to 15 % should be detectable. An even higher sensitivity was found

  14. Photonic nanowires for quantum optics

    DEFF Research Database (Denmark)

    Munsch, M.; Claudon, J.; Bleuse, J.

    Photonic nanowires (PWs) are simple dielectric structures for which a very efficient and broadband spontaneous emission (SE) control has been predicted [1]. Recently, a single photon source featuring a record high efficiency was demonstrated using this geometry [2]. Using time-resolved micro-phot...

  15. Tunneling and Transport in Nanowires

    International Nuclear Information System (INIS)

    Goldman, Allen M.

    2016-01-01

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO_3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  16. Tunneling and Transport in Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Goldman, Allen M. [Univ. of Minnesota, Minneapolis, MN (United States)

    2016-08-16

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  17. Biotemplated synthesis of PZT nanowires.

    Science.gov (United States)

    Cung, Kellye; Han, Booyeon J; Nguyen, Thanh D; Mao, Sheng; Yeh, Yao-Wen; Xu, Shiyou; Naik, Rajesh R; Poirier, Gerald; Yao, Nan; Purohit, Prashant K; McAlpine, Michael C

    2013-01-01

    Piezoelectric nanowires are an important class of smart materials for next-generation applications including energy harvesting, robotic actuation, and bioMEMS. Lead zirconate titanate (PZT), in particular, has attracted significant attention, owing to its superior electromechanical conversion performance. Yet, the ability to synthesize crystalline PZT nanowires with well-controlled properties remains a challenge. Applications of common nanosynthesis methods to PZT are hampered by issues such as slow kinetics, lack of suitable catalysts, and harsh reaction conditions. Here we report a versatile biomimetic method, in which biotemplates are used to define PZT nanostructures, allowing for rational control over composition and crystallinity. Specifically, stoichiometric PZT nanowires were synthesized using both polysaccharide (alginate) and bacteriophage templates. The wires possessed measured piezoelectric constants of up to 132 pm/V after poling, among the highest reported for PZT nanomaterials. Further, integrated devices can generate up to 0.820 μW/cm(2) of power. These results suggest that biotemplated piezoelectric nanowires are attractive candidates for stimuli-responsive nanosensors, adaptive nanoactuators, and nanoscale energy harvesters.

  18. Nanowire-based gas sensors

    NARCIS (Netherlands)

    Chen, X.; Wong, C.K.Y.; Yuan, C.A.; Zhang, G.

    2013-01-01

    Gas sensors fabricated with nanowires as the detecting elements are powerful due to their many improved characteristics such as high surface-to-volume ratios, ultrasensitivity, higher selectivity, low power consumption, and fast response. This paper gives an overview on the recent process of the

  19. In Situ Fabrication of AlN Coating by Reactive Plasma Spraying of Al/AlN Powder

    Directory of Open Access Journals (Sweden)

    Mohammed Shahien

    2011-10-01

    Full Text Available Reactive plasma spraying is a promising technology for the in situ formation of aluminum nitride (AlN coatings. Recently, it became possible to fabricate cubic-AlN-(c-AlN based coatings through reactive plasma spraying of Al powder in an ambient atmosphere. However, it was difficult to fabricate a coating with high AlN content and suitable thickness due to the coalescence of the Al particles. In this study, the influence of using AlN additive (h-AlN to increase the AlN content of the coating and improve the reaction process was investigated. The simple mixing of Al and AlN powders was not suitable for fabricating AlN coatings through reactive plasma spraying. However, it was possible to prepare a homogenously mixed, agglomerated and dispersed Al/AlN mixture (which enabled in-flight interaction between the powder and the surrounding plasma by wet-mixing in a planetary mill. Increasing the AlN content in the mixture prevented coalescence and increased the nitride content gradually. Using 30 to 40 wt% AlN was sufficient to fabricate a thick (more than 200 µm AlN coating with high hardness (approximately 1000 Hv. The AlN additive prevented the coalescence of Al metal and enhanced post-deposition nitriding through N2 plasma irradiation by allowing the nitriding species in the plasma to impinge on a larger Al surface area. Using AlN as a feedstock additive was found to be a suitable method for fabricating AlN coatings by reactive plasma spraying. Moreover, the fabricated coatings consist of hexagonal (h-AlN, c-AlN (rock-salt and zinc-blend phases and certain oxides: aluminum oxynitride (Al5O6N, cubic sphalerite Al23O27N5 (ALON and Al2O3. The zinc-blend c-AlN and ALON phases were attributed to the transformation of the h-AlN feedstock during the reactive plasma spraying. Thus, the zinc-blend c

  20. Magnetostatic Interaction in Fe-Co Nanowires

    Directory of Open Access Journals (Sweden)

    Laura Elbaile

    2012-01-01

    Full Text Available Arrays of Fe-Co alloy nanowires with diameter around 35 nm and several micrometers in length have been synthesized by codepositing Fe and Co into porous anodic alumina. The morphology, structure, and magnetic properties of the nanowires (hysteresis loops and remanence curves were characterized by SEM, TEM, X-ray diffraction (XRD, and VSM, respectively. The XRD patterns indicate that the Fe-Co nanowires present a body-centered cubic (bcc structure and a preferred (110 orientation perpendicular to the template surface. From the hysteresis loops obtained with the magnetic field applied in the axis direction of the nanowires, we can observe that the coercive field slightly decreases when the nanowire length increases. This magnetic behaviour is analyzed considering the shape anisotropy and the dipolar interactions among nanowires.

  1. Ion implantation of Cd and Ag into AlN and GaN

    CERN Document Server

    Miranda, Sérgio M C; Correia, João Guilherme; Vianden, Reiner; Johnston, Karl; Alves, Eduardo; Lorenz, Katharina

    2012-01-01

    GaN and AlN thin films were implanted with cadmium (Cd) or silver (Ag), to fluences ranging from 1×1013 to 1.7 × 1015 at/cm$^{2}$. The implanted samples were annealed at 950 ºC under flowing nitrogen. While implantation damage could be fully removed for the lowest fluences, for higher fluences the crystal quality was only partially recovered. For the high fluence samples the lattice site location of the ions was studied by Rutherford Backscattering/ channelling (RBS/C). Cd ions are found to be incorporated in substitutional cation sites (Al or Ga) while Ag is slightly displaced from this position. To further investigate the incorporation sites, Perturbed Angular Correlation (PAC) measurements were performed and the electric field gradients at the site of the probe nuclei were determined.

  2. Emission spectra from AlN and GaN doped with rare earth elements

    International Nuclear Information System (INIS)

    Choi, Sung Woo; Emura, Shuichi; Kimura, Shigeya; Kim, Moo Seong; Zhou Yikai; Teraguchi, Nobuaki; Suzuki, Akira; Yanase, Akira; Asahi, Hajime

    2006-01-01

    Luminescent properties of GaN and AlN based semiconductors containing rare earth metals of Gd and Dy are studied. Cathodoluminescent spectra from AlGdN show a clear and sharp peak at 318 nm following LO phonon satellites. Photoluminescence spectra from GaDyN by the above-gap excitation also show several peaks in addition to the broad luminescence band emission. For GaGdN, the sharp PL peaks are also observed at 650 and 670 nm, and they are assigned to the intra-f orbital transitions by their time decay measurements. The broad band at around 365 nm for AlGdN, 505 nm for GaGdN and GaDyN are commonly observed. The origin of these broad bands is discussed

  3. Nonradiative recombination in GaN quantum dots formed in the AlN matrix

    International Nuclear Information System (INIS)

    Aleksandrov, I. A.; Zhuravlev, K. S.; Mansurov, V. G.

    2009-01-01

    The mechanisms of temperature quenching of steady-state photoluminescence are studied for structures with hexagonal GaN quantum dots embedded in the AlN matrix. The structures are grown by molecular beam epitaxy. The study is conducted for structures with differently sized quantum dots, for which the peak of the photoluminescence band is in the range from 2.5 to 4.0 eV. It is found that the activation energy of thermal quenching of photoluminescence varies from 27 to 110 meV, as the quantum-dot height is decreased from 5 to 2 nm. A model is suggested to interpret the results. According to the model, the photo-luminescence signal is quenched because of the transfer of charge carriers from energy levels in the quantum dots to defect levels in the matrix.

  4. Drop and recovery of thermal conductivity of AlN upon UV irradiation

    International Nuclear Information System (INIS)

    AlShaikhi, A; Srivastava, G P

    2007-01-01

    We have performed calculations of the room-temperature thermal conductivity of oxygen contaminated aluminium nitride (AlN) by employing the Callaway model with a detailed account of three-phonon scattering processes. The role of Al vacancy and O substitution of N has been examined in the form of extended defects (clusters) and point defects. Our work provides support for the theoretical model proposed by Harris et al. [Phys. Rev. B. 47, 5428 (1993)] to explain the experimentally observed drop in the conductivity upon UV irradiation and its recovery upon UV removal and subsequent illumination of the sample with visible light at room temperature. With the reported oxygen concentration in the sample, the scattering of phonons from oxygen-related extended defects is found to be ineffective. Within the picture presented by Harris et al., the point impurity scattering parameter increases by around 17% upon UV irradiation of the sample at room temperature

  5. Electronic and atomic structure of the AlnHn+2 clusters

    DEFF Research Database (Denmark)

    Martinez, Jose Ignacio; Alonso, J.A.

    2008-01-01

    The electronic and atomic structure of the family of hydrogenated Al clusters AlnHn+2 with n=4-11 has been studied using the density functional theory with the generalized gradient approximation (GGA) for exchange and correlation. All these clusters have substantial gaps between the highest...... a polyhedron of n vertices and n H atoms form strong H-Al terminal bonds; one pair of electrons is involved in each of those bonds. The remaining n+1 electron pairs form a delocalized cloud over the surface of the Al cage. The clusters fulfilling the Wade-Mingos rule have wider HOMO-LUMO gaps...... and are chemically more stable. The trends in the gap have some reflections in the form of the photoabsorption spectra, calculated in the framework of time-dependent density functional theory using the GGA single-particle energies and orbitals and a local density approximation exchange-correlation kernel....

  6. Polycrystalline AlN films with preferential orientation by plasma enhanced chemical vapor deposition

    International Nuclear Information System (INIS)

    Sanchez, G.; Wu, A.; Tristant, P.; Tixier, C.; Soulestin, B.; Desmaison, J.; Bologna Alles, A.

    2008-01-01

    AlN thin films for acoustic wave devices were prepared by Microwave Plasma Enhanced Chemical Vapor Deposition under different process conditions, employing Si (100) and Pt (111)/SiO 2 /Si (100) substrates. The films were characterized by X-ray diffraction, Fourier transform infrared transmission spectroscopy, atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. The values of the distance between the plasma and the tri-methyl-aluminum precursor injector, the radiofrequency bias potential, and the substrate temperature were central in the development of polycrystalline films. The choice of the chamber total pressure during deposition allowed for the development of two different crystallographic orientations, i.e., or . The film microstructures exhibited in general a column-like growth with rounded tops, an average grain size of about 40 nm, and a surface roughness lower than 20 nm under the best conditions

  7. Anomalous band-gap bowing of AlN1−xPx alloy

    International Nuclear Information System (INIS)

    Winiarski, M.J.; Polak, M.; Scharoch, P.

    2013-01-01

    Highlights: •Structural and electronic properties of AlN 1−x P x from first principles. •The supercell and the virtual crystall approximation methods applied and compared. •Anomalously high band-gap bowing found. •Similarities of band-gap behavior to that in BN 1−x P x noticed. •Performance of MBJLDA with the pseudopotential approach discussed. -- Abstract: Electronic structure of zinc blende AlN 1−x P x alloy has been calculated from first principles. Structural optimization has been performed within the framework of LDA and the band-gaps calculated with the modified Becke–Jonson (MBJLDA) method. Two approaches have been examined: the virtual crystal approximation (VCA) and the supercell-based calculations (SC). The composition dependence of the lattice parameter obtained from the SC obeys Vegard’s law whereas the volume optimization in the VCA leads to an anomalous bowing of the lattice constant. A strong correlation between the band-gaps and the structural parameter in the VCA method has been observed. On the other hand, in the SC method the supercell size and atoms arrangement (clustered vs. uniform) appear to have a great influence on the computed band-gaps. In particular, an anomalously big band-gap bowing has been found in the case of a clustered configuration with relaxed geometry. Based on the performed tests and obtained results some general features of MBJLDA are discussed and its performance for similar systems predicted

  8. Enhanced ionized impurity scattering in nanowires

    Science.gov (United States)

    Oh, Jung Hyun; Lee, Seok-Hee; Shin, Mincheol

    2013-06-01

    The electronic resistivity in silicon nanowires is investigated by taking into account scattering as well as the donor deactivation from the dielectric mismatch. The effects of poorly screened dopant atoms from the dielectric mismatch and variable carrier density in nanowires are found to play a crucial role in determining the nanowire resistivity. Using Green's function method within the self-consistent Born approximation, it is shown that donor deactivation and ionized impurity scattering combined with the charged interface traps successfully to explain the increase in the resistivity of Si nanowires while reducing the radius, measured by Björk et al. [Nature Nanotech. 4, 103 (2009)].

  9. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  10. AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Y.; Li, H.; Robertson, J. [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

    2016-05-28

    AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

  11. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

    Science.gov (United States)

    Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

    2017-11-01

    In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

  12. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

    2015-01-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  13. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang

    2015-03-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  14. Extended analysis of the frequency dependence of the admittance of MIS structures with pulsed-laser-deposited AlN films

    Energy Technology Data Exchange (ETDEWEB)

    Simeonov, S; Bakalova, S; Szekeres, A; Kafedjiijska, E [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia (Bulgaria); Grigorescu, S; Socol, G; Mihailescu, I N [Lasers Department, National Institute for Lasers, Plasma and Radiation Physics, PO Box MG-54, RO-77125, Bucharest-Magurele (Romania)], E-mail: sbakalova@issp.bas.bg

    2008-05-01

    MIS structures with AlN films deposited on p-Si by pulsed laser deposition were prepared and admittance measurements were carried out in the frequency range of 100 Hz - 10 MHz. The density of traps in the AlN film and at the AlN/Si interface was evaluated using the electrical characteristics obtained, and the hopping mechanism of charge transport was determined from the dispersion of the a.c. conductance.

  15. PREFACE: Synthesis and integration of nanowires

    Science.gov (United States)

    Samuelson, L.

    2006-06-01

    The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

  16. Ti, Al and N adatom adsorption and diffusion on rocksalt cubic AlN (001) and (011) surfaces: Ab initio calculations

    Science.gov (United States)

    Mastail, C.; David, M.; Nita, F.; Michel, A.; Abadias, G.

    2017-11-01

    We use ab initio calculations to determine the preferred nucleation sites and migration pathways of Ti, Al and N adatoms on cubic NaCl-structure (B1) AlN surfaces, primary inputs towards a further thin film growth modelling of the TiAlN alloy system. The potential energy landscape is mapped out for both metallic species and nitrogen adatoms for two different AlN surface orientations, (001) and (110), using density functional theory. For all species, the adsorption energies on AlN(011) surface are larger than on AlN(001) surface. Ti and Al adatom adsorption energy landscapes determined at 0 K by ab initio show similar features, with stable binding sites being located in, or near, epitaxial surface positions, with Ti showing a stronger binding compared to Al. In direct contrast, N adatoms (Nad) adsorb preferentially close to N surface atoms (Nsurf), thus forming strong N2-molecule-like bonds on both AlN(001) and (011). Similar to N2 desorption mechanisms reported for other cubic transition metal nitride surfaces, in the present work we investigate Nad/Nsurf desorption on AlN(011) using a drag calculation method. We show that this process leaves a Nsurf vacancy accompanied with a spontaneous surface reconstruction, highlighting faceting formation during growth.

  17. Influence of substrate bias on the structure and properties of (Ti, Al)N films deposited by filtered cathodic vacuum arc

    International Nuclear Information System (INIS)

    Cheng, Y.H.; Tay, B.K.; Lau, S.P.; Shi, X.

    2001-01-01

    (Ti, Al)N films were deposited by an off-plane, double-bend, filtered cathodic vacuum arc technique in N 2 atmosphere at room temperature. The (Ti, Al)N films deposited are atomically smooth. The influence of substrate negative bias at the wide range (0-1000 V) on the deposition rate, surface morphology, crystal structure, internal stress, and mechanical properties of (Ti, Al)N films were systematically studied. Increasing substrate bias results in the decrease of deposition rate and the increase of surface roughness monotonically. At the bias of 0 V, (Ti, Al)N films are amorphous, and the internal stress, hardness, and Young's modulus for the deposited films are fairly low. With increasing substrate bias to 200 V, single-phase face-centered cubic-type nanocrystalline (Ti, Al)N films can be obtained, and the internal stress, hardness, and Young's modulus increase to the maximum of 7 GPa, 28 GPa, and 240 GPa, respectively. Further increase of substrate bias results in the decrease of intensity and the broadening of x-ray diffraction lines, and the gradual decrease of internal stress, hardness, and Young's modulus in (Ti, Al)N films

  18. Nanowire NMOS Logic Inverter Characterization.

    Science.gov (United States)

    Hashim, Yasir

    2016-06-01

    This study is the first to demonstrate characteristics optimization of nanowire N-Channel Metal Oxide Semiconductor (NW-MOS) logic inverter. Noise margins and inflection voltage of transfer characteristics are used as limiting factors in this optimization. A computer-based model used to produce static characteristics of NW-NMOS logic inverter. In this research two circuit configuration of NW-NMOS inverter was studied, in first NW-NMOS circuit, the noise margin for (low input-high output) condition was very low. For second NMOS circuit gives excellent noise margins, and results indicate that optimization depends on applied voltage to the inverter. Increasing gate to source voltage with (2/1) nanowires ratio results better noise margins. Increasing of applied DC load transistor voltage tends to increasing in decreasing noise margins; decreasing this voltage will improve noise margins significantly.

  19. Effects of High-Intensity Interval Exercise versus Moderate Continuous Exercise on Glucose Homeostasis and Hormone Response in Patients with Type 1 Diabetes Mellitus Using Novel Ultra-Long-Acting Insulin.

    Science.gov (United States)

    Moser, Othmar; Tschakert, Gerhard; Mueller, Alexander; Groeschl, Werner; Pieber, Thomas R; Obermayer-Pietsch, Barbara; Koehler, Gerd; Hofmann, Peter

    2015-01-01

    We investigated blood glucose (BG) and hormone response to aerobic high-intensity interval exercise (HIIE) and moderate continuous exercise (CON) matched for mean load and duration in type 1 diabetes mellitus (T1DM). Seven trained male subjects with T1DM performed a maximal incremental exercise test and HIIE and CON at 3 different mean intensities below (A) and above (B) the first lactate turn point and below the second lactate turn point (C) on a cycle ergometer. Subjects were adjusted to ultra-long-acting insulin Degludec (Tresiba/ Novo Nordisk, Denmark). Before exercise, standardized meals were administered, and short-acting insulin dose was reduced by 25% (A), 50% (B), and 75% (C) dependent on mean exercise intensity. During exercise, BG, adrenaline, noradrenaline, dopamine, cortisol, glucagon, and insulin-like growth factor-1, blood lactate, heart rate, and gas exchange variables were measured. For 24 h after exercise, interstitial glucose was measured by continuous glucose monitoring system. BG decrease during HIIE was significantly smaller for B (p = 0.024) and tended to be smaller for A and C compared to CON. No differences were found for post-exercise interstitial glucose, acute hormone response, and carbohydrate utilization between HIIE and CON for A, B, and C. In HIIE, blood lactate for A (p = 0.006) and B (p = 0.004) and respiratory exchange ratio for A (p = 0.003) and B (p = 0.003) were significantly higher compared to CON but not for C. Hypoglycemia did not occur during or after HIIE and CON when using ultra-long-acting insulin and applying our methodological approach for exercise prescription. HIIE led to a smaller BG decrease compared to CON, although both exercises modes were matched for mean load and duration, even despite markedly higher peak workloads applied in HIIE. Therefore, HIIE and CON could be safely performed in T1DM. ClinicalTrials.gov NCT02075567 http://www.clinicaltrials.gov/ct2/show/NCT02075567.

  20. Effects of High-Intensity Interval Exercise versus Moderate Continuous Exercise on Glucose Homeostasis and Hormone Response in Patients with Type 1 Diabetes Mellitus Using Novel Ultra-Long-Acting Insulin.

    Directory of Open Access Journals (Sweden)

    Othmar Moser

    Full Text Available We investigated blood glucose (BG and hormone response to aerobic high-intensity interval exercise (HIIE and moderate continuous exercise (CON matched for mean load and duration in type 1 diabetes mellitus (T1DM.Seven trained male subjects with T1DM performed a maximal incremental exercise test and HIIE and CON at 3 different mean intensities below (A and above (B the first lactate turn point and below the second lactate turn point (C on a cycle ergometer. Subjects were adjusted to ultra-long-acting insulin Degludec (Tresiba/ Novo Nordisk, Denmark. Before exercise, standardized meals were administered, and short-acting insulin dose was reduced by 25% (A, 50% (B, and 75% (C dependent on mean exercise intensity. During exercise, BG, adrenaline, noradrenaline, dopamine, cortisol, glucagon, and insulin-like growth factor-1, blood lactate, heart rate, and gas exchange variables were measured. For 24 h after exercise, interstitial glucose was measured by continuous glucose monitoring system.BG decrease during HIIE was significantly smaller for B (p = 0.024 and tended to be smaller for A and C compared to CON. No differences were found for post-exercise interstitial glucose, acute hormone response, and carbohydrate utilization between HIIE and CON for A, B, and C. In HIIE, blood lactate for A (p = 0.006 and B (p = 0.004 and respiratory exchange ratio for A (p = 0.003 and B (p = 0.003 were significantly higher compared to CON but not for C.Hypoglycemia did not occur during or after HIIE and CON when using ultra-long-acting insulin and applying our methodological approach for exercise prescription. HIIE led to a smaller BG decrease compared to CON, although both exercises modes were matched for mean load and duration, even despite markedly higher peak workloads applied in HIIE. Therefore, HIIE and CON could be safely performed in T1DM.ClinicalTrials.gov NCT02075567 http://www.clinicaltrials.gov/ct2/show/NCT02075567.

  1. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    Energy Technology Data Exchange (ETDEWEB)

    Ng, D.K.T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Hong, M.H. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)], E-mail: HONG_Minghui@dsi.a-star.edu.sg; Tan, L.S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Zhou, Y. [Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Department of Mechanical Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Chen, G.X. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

    2008-01-31

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices.

  2. Nanowire sensors and arrays for chemical/biomolecule detection

    Science.gov (United States)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  3. Selective growth of gallium nitride nanowires by femtosecond laser patterning

    International Nuclear Information System (INIS)

    Ng, D.K.T.; Hong, M.H.; Tan, L.S.; Zhou, Y.; Chen, G.X.

    2008-01-01

    We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices

  4. Enhanced photovoltaic performance of an inclined nanowire array solar cell.

    Science.gov (United States)

    Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

    2015-11-30

    An innovative solar cell based on inclined p-i-n nanowire array is designed and analyzed. The results show that the inclined geometry can sufficiently increase the conversion efficiency of solar cells by enhancing the absorption of light in the active region. By tuning the nanowire array density, nanowire diameter, nanowire length, as well as the proportion of intrinsic region of the inclined nanowire solar cell, a remarkable efficiency in excess of 16% can be obtained in GaAs. Similar results have been obtained in InP and Si nanowire solar cells, demonstrating the universality of the performance enhancement of inclined nanowire arrays.

  5. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  6. Nanowire sensor, sensor array, and method for making the same

    Science.gov (United States)

    Yun, Minhee (Inventor); Myung, Nosang (Inventor); Vasquez, Richard (Inventor); Homer, Margie (Inventor); Ryan, Margaret (Inventor); Yen, Shiao-Pin (Inventor); Fleurial, Jean-Pierre (Inventor); Bugga, Ratnakumar (Inventor); Choi, Daniel (Inventor); Goddard, William (Inventor)

    2012-01-01

    The present invention relates to a nanowire sensor and method for forming the same. More specifically, the nanowire sensor comprises at least one nanowire formed on a substrate, with a sensor receptor disposed on a surface of the nanowire, thereby forming a receptor-coated nanowire. The nanowire sensor can be arranged as a sensor sub-unit comprising a plurality of homogeneously receptor-coated nanowires. A plurality of sensor subunits can be formed to collectively comprise a nanowire sensor array. Each sensor subunit in the nanowire sensor array can be formed to sense a different stimulus, allowing a user to sense a plurality of stimuli. Additionally, each sensor subunit can be formed to sense the same stimuli through different aspects of the stimulus. The sensor array is fabricated through a variety of techniques, such as by creating nanopores on a substrate and electrodepositing nanowires within the nanopores.

  7. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan; Corte-Leon, H.; Ivanov, Yurii P.; Moreno, J. A.; Kazakova, O.; Kosel, Jü rgen

    2017-01-01

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  8. Generating Tunable Magnetism in AlN Nanoribbons Using Anion/Cation Vacancies:a First-Principles Prediction

    Science.gov (United States)

    Chegeni, Mahdieh; Beiranvand, Razieh; Valedbagi, Shahoo

    2017-04-01

    Using first-principles approach, we theoretically study the effect of anion/cation vacancies on structural and electro-magnetic properties of zigzag AlN nanoribbons (ZAlNNRs). Calculations were performed using a full spin-polarized method within the density functional theory (DFT). Our findings shed light on how the edge states combined with vacancy engineering can affect electro-magnetic properties of ZAlNNRs. We found that depending on the nature and number of vacancies, ZAlNNRs can design as half-metal or semiconductor. Our results reveal a significant amount of spin magnetic moment for ZAlNNR with Al vacancies (VAl). These results may open new applications of AlN nano-materials in spintronics.

  9. Indium hexagonal island as seed-layer to boost a-axis orientation of AlN thin films

    Science.gov (United States)

    Redjdal, N.; Salah, H.; Azzaz, M.; Menari, H.; Manseri, A.; Guedouar, B.; Garcia-Sanchez, A.; Chérif, S. M.

    2018-06-01

    Highly a-axis oriented aluminum nitride films have been grown on Indium coated (100) Si substrate by DC reactive magnetron sputtering. It is shown that In incorporated layer improve the extent of preferential growth along (100) axis and form dense AlN films with uniform surface and large grains, devoid of micro-cracks. As revealed by SEM cross section images, AlN structure consists of oriented columnar grains perpendicular to the Si surface, while AlN/In structure results in uniformely tilted column. SEM images also revealed the presence of In hexagonal islands persistent throughout the entire growth. Micro -Raman spectroscopy of the surface and the cross section of the AlN/In grown films evidenced their high degree of homogeneity and cristallinity.

  10. Electron Transport Properties of Ge nanowires

    Science.gov (United States)

    Hanrath, Tobias; Khondaker, Saiful I.; Yao, Zhen; Korgel, Brian A.

    2003-03-01

    Electron Transport Properties of Ge nanowires Tobias Hanrath*, Saiful I. Khondaker, Zhen Yao, Brian A. Korgel* *Dept. of Chemical Engineering, Dept. of Physics, Texas Materials Institute, and Center for Nano- and Molecular Science and Technology University of Texas at Austin, Austin, Texas 78712-1062 e-mail: korgel@mail.che.utexas.edu Germanium (Ge) nanowires with diameters ranging from 6 to 50 nm and several micrometer in length were grown via a supercritical fluid-liquid-solid synthesis. Parallel electron energy loss spectroscopy (PEELS) was employed to study the band structure and electron density in the Ge nanowires. The observed increase in plasmon peak energy and peak width with decreasing nanowire diameter is attributed to quantum confinement effects. For electrical characterization, Ge nanowires were deposited onto a patterned Si/SiO2 substrate. E-beam lithography was then used to form electrode contacts to individual nanowires. The influence of nanowire diameter, surface chemistry and crystallographic defects on electron transport properties were investigated and the comparison of Ge nanowire conductivity with respect to bulk, intrinsic Ge will be presented.

  11. Moessbauer study of Fe-Co nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen Ziyu [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China)]. E-mail: chenzy@lzu.edu.cn; Zhan Qingfeng; Xue Desheng; Li Fashen [Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou (China); Zhou Xuezhi; Kunkel, Henry; Williams, Gwyn [Department of Physics and Astronomy, the University of Manitoba (Canada)

    2002-01-28

    Arrays of Fe{sub 1-x}Co{sub x} (0.0{<=}x{<=}0.92) nanowires have been prepared by an electrochemical process, co-depositing Fe and Co atoms into the pores of anodic aluminium; their compositions were determined by atomic absorption spectroscopy. Transmission electron microscope results show that the nanowires are regularly spaced and uniform in shape with lengths of about 7.5 {mu}m and diameters of 20 nm. The x-ray diffraction indicates a texture in the deposited nanowires. For the composition below 82 at.% cobalt, the nanowires had a body-centred-cubic structure with a [110] preferred orientation. For the 92 at.% cobalt sample, the alloy exhibited a mixture of bcc and face-centred-cubic structure. The room temperature {sup 57}Fe Moessbauer spectra of the arrays of Fe{sub 1-x}Co{sub x} nanowires have second and fifth absorption lines of the six-line pattern with almost zero intensity, indicating that the internal magnetic field in the nanowires lies along the long axis of the nanowire. The maximum values of the hyperfine field (B{sub hf} 36.6{+-}0.1 T) and isomer shift (IS=0.06{+-}0.01 mm s-1) occur for 44 at.% cobalt. The variations of the isomer shift and the linewidths with composition indicate that the Fe{sub 1-x}Co{sub x} alloy nanowires around the equiatomic composition are in an atomistic disordered state. (author)

  12. Epitaxy of advanced nanowire quantum devices

    NARCIS (Netherlands)

    Gazibegovic, S.; Car, D.; Zhang, H.; Balk, S.C.; Logan, J.A.; De Moor, M.W.A.; Cassidy, M.C.; Schmits, R.; Xu, D.; Wang, G.; Krogstrup, P.; Op Het Veld, R.L.M.; Zuo, K.; Vos, Y.; Shen, J.; Bouman, D.; Shojaei, B.; Pennachio, D.; Lee, J.S.; van Veldhoven, P.J.; Koelling, S.; Verheijen, M.A.; Kouwenhoven, L.P.; Palmstrøm, C.J.; Bakkers, E.P.A.M.

    2017-01-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a

  13. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  14. Functionalization of magnetic nanowires by charged biopolymers

    DEFF Research Database (Denmark)

    Magnin, D.; Callegari, V.; Mátéfi-Tempfli, Stefan

    2008-01-01

    We report on a facile method for the preparation of biocompatible and bioactive magnetic nanowires. The method consists of the direct deposition of polysaccharides by layer-by-layer (LbL) assembly onto a brush of metallic nanowires; obtained by electrodeposition of the metal within the nanopores ...

  15. Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

    Science.gov (United States)

    Ganz, P. R.; Schaadt, D. M.

    2011-12-01

    Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

  16. Transformation of bulk alloys to oxide nanowires

    Science.gov (United States)

    Lei, Danni; Benson, Jim; Magasinski, Alexandre; Berdichevsky, Gene; Yushin, Gleb

    2017-01-01

    One dimensional (1D) nanostructures offer prospects for enhancing the electrical, thermal, and mechanical properties of a broad range of functional materials and composites, but their synthesis methods are typically elaborate and expensive. We demonstrate a direct transformation of bulk materials into nanowires under ambient conditions without the use of catalysts or any external stimuli. The nanowires form via minimization of strain energy at the boundary of a chemical reaction front. We show the transformation of multimicrometer-sized particles of aluminum or magnesium alloys into alkoxide nanowires of tunable dimensions, which are converted into oxide nanowires upon heating in air. Fabricated separators based on aluminum oxide nanowires enhanced the safety and rate capabilities of lithium-ion batteries. The reported approach allows ultralow-cost scalable synthesis of 1D materials and membranes.

  17. Nanowire-decorated microscale metallic electrodes

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Antohe, V.A.

    2008-01-01

    The fabrication of metallic nanowire patterns within anodic alumina oxide (AAO) membranes on top of continuous conducting substrates are discussed. The fabrication protocol is based on the realization of nanowire patterns using supported nanoporous alumina templates (SNAT) prepared on top...... of lithographically defined metallic microelectrodes. The anodization of the aluminum permits electroplating only on top of the metallic electrodes, leading to the nanowire patterns having the same shape as the underlying metallic tracks. The variation in the fabricated structures between the patterned and non......-patterned substrates can be interpreted in terms of different behavior during anodization. The improved quality of fabricated nanowire patterns is clearly demonstrated by the SEM imaging and the uniform growth of nanowires inside the alumina template is observed without any significant height variation....

  18. Diamond nanowires: fabrication, structure, properties, and applications.

    Science.gov (United States)

    Yu, Yuan; Wu, Liangzhuan; Zhi, Jinfang

    2014-12-22

    C(sp(3) )C-bonded diamond nanowires are wide band gap semiconductors that exhibit a combination of superior properties such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness, and room-temperature thermal conductivity. The creation of 1D diamond nanowires with their giant surface-to-volume ratio enhancements makes it possible to control and enhance the fundamental properties of diamond. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. We present a comprehensive, up-to-date review of diamond nanowires, including a discussion of their synthesis along with their structures, properties, and applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

    Science.gov (United States)

    Yan, Jie-Yun

    2018-06-01

    Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

  20. Preparation and Characterization of Tin Oxide Nanowires

    Directory of Open Access Journals (Sweden)

    A. Kabiri

    2013-12-01

    Full Text Available The aim of this research is preparation of SnO2 nanowires by means of Thermal chemical reaction vapor transport deposition (TCRVTD method from SnO powders. The morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (FE-SEM, EDS, and XRD. The XRD diffraction patterns reveal that the SnO2 nanowires have been grown in the form of tetragonal crystal structures with the lattice parameter of a=b=0.440 nm, and c=0.370 nm. The SEM images reveal that SnO2 nanowires have successfully been grown on the Si substrate. The EDS patterns show that only elements of Sn, O and Au are detected. Prior to the VLS process the substrate is coated by a thin layer of Au. The diameter of nanowires is measured to be something between 20-100 nm.

  1. Superconductive silicon nanowires using gallium beam lithography.

    Energy Technology Data Exchange (ETDEWEB)

    Henry, Michael David; Jarecki, Robert Leo,

    2014-01-01

    This work was an early career LDRD investigating the idea of using a focused ion beam (FIB) to implant Ga into silicon to create embedded nanowires and/or fully suspended nanowires. The embedded Ga nanowires demonstrated electrical resistivity of 5 m-cm, conductivity down to 4 K, and acts as an Ohmic silicon contact. The suspended nanowires achieved dimensions down to 20 nm x 30 nm x 10 m with large sensitivity to pressure. These structures then performed well as Pirani gauges. Sputtered niobium was also developed in this research for use as a superconductive coating on the nanowire. Oxidation characteristics of Nb were detailed and a technique to place the Nb under tensile stress resulted in the Nb resisting bulk atmospheric oxidation for up to years.

  2. Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

    Directory of Open Access Journals (Sweden)

    U Hyeok Choi

    2017-10-01

    Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.

  3. The impact of electrode materials on 1/f noise in piezoelectric AlN contour mode resonators

    Science.gov (United States)

    Kim, Hoe Joon; Jung, Soon In; Segovia-Fernandez, Jeronimo; Piazza, Gianluca

    2018-05-01

    This paper presents a detailed analysis on the impact of electrode materials and dimensions on flicker frequency (1/f) noise in piezoelectric aluminum nitride (AlN) contour mode resonators (CMRs). Flicker frequency noise is a fundamental noise mechanism present in any vibrating mechanical structure, whose sources are not generally well understood. 1 GHz AlN CMRs with three different top electrode materials (Al, Au, and Pt) along with various electrode lengths and widths are fabricated to control the overall damping acting on the device. Specifically, the use of different electrode materials allows control of thermoelastic damping (TED), which is the dominant damping mechanism for high frequency AlN CMRs and largely depends on the thermal properties (i.e. thermal diffusivities and expansion coefficients) of the metal electrode rather than the piezoelectric film. We have measured Q and 1/f noise of 68 resonators and the results show that 1/f noise decreases with increasing Q, with a power law dependence that is about 1/Q4. Interestingly, the noise level also depends on the type of electrode materials. Devices with Pt top electrode demonstrate the best noise performance. Our results help unveiling some of the sources of 1/f noise in these resonators, and indicate that a careful selection of the electrode material and dimensions could reduce 1/f noise not only in AlN-CMRs, but also in various classes of resonators, and thus enable ultra-low noise mechanical resonators for sensing and radio frequency applications.

  4. The impact of electrode materials on 1/f noise in piezoelectric AlN contour mode resonators

    Directory of Open Access Journals (Sweden)

    Hoe Joon Kim

    2018-05-01

    Full Text Available This paper presents a detailed analysis on the impact of electrode materials and dimensions on flicker frequency (1/f noise in piezoelectric aluminum nitride (AlN contour mode resonators (CMRs. Flicker frequency noise is a fundamental noise mechanism present in any vibrating mechanical structure, whose sources are not generally well understood. 1 GHz AlN CMRs with three different top electrode materials (Al, Au, and Pt along with various electrode lengths and widths are fabricated to control the overall damping acting on the device. Specifically, the use of different electrode materials allows control of thermoelastic damping (TED, which is the dominant damping mechanism for high frequency AlN CMRs and largely depends on the thermal properties (i.e. thermal diffusivities and expansion coefficients of the metal electrode rather than the piezoelectric film. We have measured Q and 1/f noise of 68 resonators and the results show that 1/f noise decreases with increasing Q, with a power law dependence that is about 1/Q4. Interestingly, the noise level also depends on the type of electrode materials. Devices with Pt top electrode demonstrate the best noise performance. Our results help unveiling some of the sources of 1/f noise in these resonators, and indicate that a careful selection of the electrode material and dimensions could reduce 1/f noise not only in AlN-CMRs, but also in various classes of resonators, and thus enable ultra-low noise mechanical resonators for sensing and radio frequency applications.

  5. Structural stabilities and electronic properties of Mg28-nAln clusters: A first-principles study

    Directory of Open Access Journals (Sweden)

    Bao-Juan Lu

    2017-09-01

    Full Text Available In this paper, we have constructed the alloy configurations of Mg28-nAln by replacing atoms at various possible positions, starting from the stable structures of Mg28 and Al28 clusters. According to the symmetry of the cluster structure, the isomers of these initial structures have been screened with the congruence check, which would reduce computational hours and improve efficiency. Using the first-principles method, the structural evolution, mixing behavior and electronic properties of Mg28-nAln clusters are investigated for all compositions. We conclude that Al atoms prefer to reside in the central positions of Mg−Al clusters and Mg atoms tend to occupy the peripheral location. The negative mixing enthalpies imply the stabilities of these Mg-Al clusters and thus possible applications in catalysis and hydrogen storage materials. Among Mg28-nAln clusters, Mg24Al4, Mg21Al7, Mg14Al14, Mg26Al2 and Mg27Al1 present relatively high thermodynamic stabilities, and the electronic properties of these stable structures are discussed with the charge distributions around the Fermi level.

  6. Oblique-angle sputtered AlN nanocolumnar layer as a buffer layer in GaN-based LED

    International Nuclear Information System (INIS)

    Chen, Lung-Chien; Tien, Ching-Ho; Liao, Wei-Chian; Luo, Yi-Min

    2011-01-01

    This work presents an aluminum nitride (AlN) nanocolumnar layer sputtered at various oblique angles and its application as a buffer layer for GaN-based light-emitting diodes (LEDs) that are fabricated on sapphire substrates. The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm. The GaN-based LED structure is perpendicularly extended from the OA-AlN nanocolumnar layer. Then, the nanocolumnar structure is merged into p-GaN layer to form a mesa structure with a diameter of about 200-600 nm on the surface of the GaN-based LED. Moreover, optical characteristics of the LED were studied using photoluminescence, along with the blue-shifts observed as well. - Research highlights: → An AlN nanocolumnar buffer layer prepared by oblique-angle (OA) deposition. → GaN-based LED structures were grown on a sapphire substrate with an AlN nanocolumnar buffer layer. → The OA-AlN nanocolumnar layer has a diameter of about 30-60 nm.

  7. Roles of kinetics and energetics in the growth of AlN by plasma-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Im, I. H.; Minegishi, T.; Hanada, T.; Lee, S. W.; Cho, M. W.; Yao, T.; Oh, D. C.; Chang, J. H.

    2006-01-01

    The roles of kinetics and energetics in the growth processes of AlN on c-sapphire by plasma assisted molecular beam epitaxy are investigated by varying the growth rate from 1 to 31 A/min and the substrate temperature from 800 to 1000 .deg. C. The energetics is found to govern the growth of AlN in the low-growth rate region even at a low substrate temperature of 800 .deg. C owing to the enhanced residence time of adatoms, thereby increasing the surface migration length. As the growth rate increases, the growth tends to be governed by kinetics because of a reduction in the residence time of adatoms. Consequently, the surface roughness and crystal quality are greatly improved for the low-growth-rate case. In addition, the lattice strain relaxation is completed from the beginning of epitaxy for energetics-limiting growth while lattice strain relaxation is retarded for kinetics-limiting growth because of pre-existing partial strain relaxation. Energetics becomes more favorable as the substrate temperature is raised because of an increase in the surface diffusion length owing to an enhanced diffusion coefficient. Consequently high-crystal-quality AlN layers are grown under the energetics-limiting growth condition with a screw dislocation density of 7.4 x 10 8 cm -2 even for a thin 42-nm thick film.

  8. Indentation-Induced Mechanical Deformation Behaviors of AlN Thin Films Deposited on c-Plane Sapphire

    International Nuclear Information System (INIS)

    Jian, Sh.R.; Juang, J.Y.

    2012-01-01

    The mechanical properties and deformation behaviors of AlN thin films deposited on c-plane sapphire substrates by helicon sputtering method were determined using the Berkovich nano indentation and cross-sectional transmission electron microscopy (XTEM). The load-displacement curves show the 'pop-ins' phenomena during nano indentation loading, indicative of the formation of slip bands caused by the propagation of dislocations. No evidence of nano indentation-induced phase transformation or cracking patterns was observed up to the maximum load of 80 mN, from either XTEM or atomic force microscopy (AFM) of the mechanically deformed regions. Instead, XTEM revealed that the primary deformation mechanism in AlN thin films is via propagation of dislocations on both basal and pyramidal planes. Furthermore, the hardness and Young's modulus of AlN thin films estimated using the continuous contact stiffness measurements (CSMs) mode provided with the nanoindenter are 16.2 GPa and 243.5 GPa, respectively.

  9. Influence factors of the inter-nanowire thermal contact resistance in the stacked nanowires

    Science.gov (United States)

    Wu, Dongxu; Huang, Congliang; Zhong, Jinxin; Lin, Zizhen

    2018-05-01

    The inter-nanowire thermal contact resistance is important for tuning the thermal conductivity of a nanocomposite for thermoelectric applications. In this paper, the stacked copper nanowires are applied for studying the thermal contact resistance. The stacked copper nanowires are firstly made by the cold-pressing method, and then the nanowire stacks are treated by sintering treatment. With the effect of the volumetric fraction of nanowires in the stack and the influence of the sintering-temperature on the thermal contact resistance discussed, results show that: The thermal conductivity of the 150-nm copper nanowires can be enlarged almost 2 times with the volumetric fraction increased from 32 to 56% because of the enlarged contact-area and contact number of a copper nanowire. When the sintering temperature increases from 293 to 673 K, the thermal conductivity of the stacked 300-nm nanowires could be enlarged almost 2.5 times by the sintering treatment, because of the improved lattice property of the contact zone. In conclusion, application of a high volumetric fraction or/and a sintering-treatment are effectivity to tune the inter-nanowire thermal contact resistance, and thus to tailor the thermal conductivity of a nanowire network or stack.

  10. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Directory of Open Access Journals (Sweden)

    Ali Vazinishayan

    2018-06-01

    Full Text Available In this work, we employed commercial finite element modeling (FEM software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular, Ag (pentagonal and Si (rectangular using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively. Keywords: Nanowires, Material effects, Mechanical properties, Brittle failure

  11. A flexible 3D nitrogen-doped carbon foam@CNTs hybrid hosting TiO2 nanoparticles as free-standing electrode for ultra-long cycling lithium-ion batteries

    Science.gov (United States)

    Yuan, Wei; Wang, Boya; Wu, Hao; Xiang, Mingwu; Wang, Qiong; Liu, Heng; Zhang, Yun; Liu, Huakun; Dou, Shixue

    2018-03-01

    Free-standing electrodes have stood out from the electrode pack, owing to their advantage of abandoning the conventional polymeric binder and conductive agent, thus increasing the specific capacity of lithium-ion batteries. Nevertheless, their practical application is hampered by inferior electrical conductivity and complex manufacturing process. To this end, we report here a facile approach to fabricate a flexible 3D N-doped carbon foam/carbon nanotubes (NCF@CNTs) hybrid to act as the current collector and host scaffold for TiO2 particles, which are integrated into a lightweight free-standing electrode (NCF@CNTs-TiO2). In the resulting architecture, ultra-fine TiO2 nanoparticles are homogeneously anchored in situ into the N-doped NCF@CNTs framework with macro- and meso-porous structure, wrapped by a dense CNT layer, cooperatively enhances the electrode flexibility and forms an interconnected conductive network for electron/ion transport. As a result, the as-prepared NCF@CNTs-TiO2 electrode exhibits excellent lithium storage performance with high specific capacity of 241 mAh g-1 at 1 C, superb rate capability of 145 mAh g-1 at 20 C, ultra-long cycling stability with an ultra-low capacity decay of 0.0037% per cycle over 2500 cycles, and excellent thermal stability with ∼94% capacity retention over 100 cycles at 55 °C.

  12. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    Science.gov (United States)

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-03-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10-25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm.

  13. Methods of optimization of reactive sputtering conditions of Al target during AlN films deposition

    Directory of Open Access Journals (Sweden)

    Chodun Rafal

    2015-12-01

    Full Text Available Encouraged by recent studies and considering the well-documented problems occurring during AlN synthesis, we have chosen two diagnostic methods which would enable us to fully control the process of synthesis and characterize the synthesized aluminum nitride films. In our experiment we have compared the results coming from OES measurements of plasma and circulating power characteristics of the power supply with basic features of the deposited layers. The dual magnetron system operating in AC mode was used in our studies. Processes of aluminum target sputtering were carried out in an atmosphere of a mixture of argon and nitrogen. The plasma emission spectra were measured with the use of a monochromator device. Analyses were made by comparing the positions and intensities of spectral lines of the plasma components. The results obtained allowed us to characterize the sputtering process under various conditions of gas mixture compositions as well as power distribution more precisely, which is reported in this work. The measured spectra were related to the deposition rate, the structure morphology of the films and chemical composition. Our work proved that the use of plasma OES and circulating power measurements make possible to control the process of sputtering and synthesis of deposited films in situ.

  14. High temperature energy harvesters utilizing ALN/3C-SiC composite diaphragms

    Science.gov (United States)

    Lai, Yun-Ju; Li, Wei-Chang; Felmetsger, Valery V.; Senesky, Debbie G.; Pisano, Albert P.

    2014-06-01

    Microelectromechanical systems (MEMS) energy harvesting devices aiming at powering wireless sensor systems for structural health monitoring in harsh environments are presented. For harsh environment wireless sensor systems, sensor modules are required to operate at elevated temperatures (> 250°C) with capabilities to resist harsh chemical conditions, thereby the use of battery-based power sources becomes challenging and not economically efficient if considering the required maintenance efforts. To address this issue, energy harvesting technology is proposed to replace batteries and provide a sustainable power source for the sensor systems towards autonomous harsh environment wireless sensor networks. In particular, this work demonstrates a micromachined aluminum nitride/cubic silicon carbide (AlN/3C-SiC) composite diaphragm energy harvester, which enables high temperature energy harvesting from ambient pulsed pressure sources. The fabricated device yields an output power density of 87 μW/cm2 under 1.48-psi pressure pulses at 1 kHz while connected to a 14.6-kΩ load resistor. The effects of pulse profile on output voltage have been studied, showing that the output voltage can be maximized by optimizing the diaphragm resonance frequency based on specific pulse characteristics. In addition, temperature dependence of the diaphragm resonance frequency over the range of 20°C to 600°C has been investigated and the device operation at temperatures as high as 600°C has been verified.

  15. White Noise Responsiveness of an AlN Piezoelectric MEMS Cantilever Vibration Energy Harvester

    International Nuclear Information System (INIS)

    Jia, Y; Seshia, A A

    2014-01-01

    This paper reports the design, analysis and experimental characterisation of a piezoelectric MEMS cantilever vibration energy harvester, the enhancement of its power output by adding various values of end mass, as well as assessing the responsiveness towards white noise. Devices are fabricated using a 0.5 μm AlN on 10 μm doped Si process. Cantilevers with 5 mm length and 2 mm width were tested at either unloaded condition (MC0: f n 577 Hz) or subjected to estimated end masses of 2 mg (MC2: f n 129 Hz) and 5 mg (MC5: f n 80 Hz). While MC0 was able to tolerate a higher drive acceleration prior to saturation (7 g with 0.7 μW), MC5 exhibited higher peak power attainable at a lower input vibration (2.56 μW at 3 ms −2 ). MC5 was also subjected to band-limited (10 Hz to 2 kHz) white noise vibration, where the power response was only a fraction of its resonant counterpart for the same input: peak instantaneous power >1 μW was only attainable beyond 2 g of white noise, whereas single frequency resonant response only required 2.5 ms −2 . Both the first resonant response and the band-limited white noise response were also compared to a numerical model, showing close agreements

  16. Epitaxy of advanced nanowire quantum devices

    Science.gov (United States)

    Gazibegovic, Sasa; Car, Diana; Zhang, Hao; Balk, Stijn C.; Logan, John A.; de Moor, Michiel W. A.; Cassidy, Maja C.; Schmits, Rudi; Xu, Di; Wang, Guanzhong; Krogstrup, Peter; Op Het Veld, Roy L. M.; Zuo, Kun; Vos, Yoram; Shen, Jie; Bouman, Daniël; Shojaei, Borzoyeh; Pennachio, Daniel; Lee, Joon Sue; van Veldhoven, Petrus J.; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Palmstrøm, Chris J.; Bakkers, Erik P. A. M.

    2017-08-01

    Semiconductor nanowires are ideal for realizing various low-dimensional quantum devices. In particular, topological phases of matter hosting non-Abelian quasiparticles (such as anyons) can emerge when a semiconductor nanowire with strong spin-orbit coupling is brought into contact with a superconductor. To exploit the potential of non-Abelian anyons—which are key elements of topological quantum computing—fully, they need to be exchanged in a well-controlled braiding operation. Essential hardware for braiding is a network of crystalline nanowires coupled to superconducting islands. Here we demonstrate a technique for generic bottom-up synthesis of complex quantum devices with a special focus on nanowire networks with a predefined number of superconducting islands. Structural analysis confirms the high crystalline quality of the nanowire junctions, as well as an epitaxial superconductor-semiconductor interface. Quantum transport measurements of nanowire ‘hashtags’ reveal Aharonov-Bohm and weak-antilocalization effects, indicating a phase-coherent system with strong spin-orbit coupling. In addition, a proximity-induced hard superconducting gap (with vanishing sub-gap conductance) is demonstrated in these hybrid superconductor-semiconductor nanowires, highlighting the successful materials development necessary for a first braiding experiment. Our approach opens up new avenues for the realization of epitaxial three-dimensional quantum architectures which have the potential to become key components of various quantum devices.

  17. Platinum boride nanowires: Synthesis and characterization

    International Nuclear Information System (INIS)

    Ding Zhanhui; Qiu Lixia; Zhang Jian; Yao Bin; Cui Tian; Guan Weiming; Zheng Weitao; Wang Wenquan; Zhao Xudong; Liu Xiaoyang

    2012-01-01

    Highlights: ► Platinum boride nanowires have been synthesized via the direct current arc discharge method. ► XRD, TEM and SAED indicate that the nanowires are single-crystal PtB. ► Two broad photoluminescence emission peaks at about 586 nm and 626 nm have been observed in the PL spectroscopy of PtB nanowires. - Abstract: Platinum boride (PtB) nanowires have been successfully fabricated with direct current arc discharge method using a milled mixture of platinum (Pt) and boron nitride (BN) powders. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the compositions, morphology, and structures of the samples. The results show that PtB nanowires are 30–50 nm thick and 20–30 μm long. TEM and selected area electron diffraction (SAED) patterns identify that the PtB nanowires are single-crystalline in nature. A growth mechanism based on vapor–liquid–solid (VLS) process is proposed for the formation of nanowires.

  18. Bending and tensile deformation of metallic nanowires

    International Nuclear Information System (INIS)

    McDowell, Matthew T; Leach, Austin M; Gall, Ken

    2008-01-01

    Using molecular statics simulations and the embedded atom method, a technique for bending silver nanowires and calculating Young's modulus via continuum mechanics has been developed. The measured Young's modulus values extracted from bending simulations were compared with modulus values calculated from uniaxial tension simulations for a range of nanowire sizes, orientations and geometries. Depending on axial orientation, the nanowires exhibit stiffening or softening under tension and bending as size decreases. Bending simulations typically result in a greater variation of Young's modulus values with nanowire size compared with tensile deformation, which indicates a loading-method-dependent size effect on elastic properties at sub-5 nm wire diameters. Since the axial stress is maximized at the lateral surfaces in bending, the loading-method-dependent size effect is postulated to be primarily a result of differences in nanowire surface and core elastic modulus. The divergence of Young's modulus from the bulk modulus in these simulations occurs at sizes below the range in which experiments have demonstrated a size scale effect on elastic properties of metallic nanowires. This difference indicates that other factors beyond native metallic surface properties play a role in experimentally observed nanowire elastic modulus size effects

  19. Mechanical behavior enhancement of ZnO nanowire by embedding different nanowires

    Science.gov (United States)

    Vazinishayan, Ali; Yang, Shuming; Lambada, Dasaradha Rao; Wang, Yiming

    2018-06-01

    In this work, we employed commercial finite element modeling (FEM) software package ABAQUS to analyze mechanical properties of ZnO nanowire before and after embedding with different kinds of nanowires, having different materials and cross-section models such as Au (circular), Ag (pentagonal) and Si (rectangular) using three point bending technique. The length and diameter of the ZnO nanowire were measured to be 12,280 nm and 103.2 nm, respectively. In addition, Au, Ag and Si nanowires were considered to have the length of 12,280 nm and the diameter of 27 nm. It was found that after embedding Si nanowire with rectangular cross-section into the ZnO nanowire, the distribution of Von Misses stresses criterion, displacement and strain were decreased than the other nanowires embedded. The highest stiffness, the elastic deformation and the high strength against brittle failure have been made by Si nanowire comparison to the Au and Ag nanowires, respectively.

  20. Synthesis of Oxidation-Resistant Cupronickel Nanowires for Transparent Conducting Nanowire Networks

    Energy Technology Data Exchange (ETDEWEB)

    Rathmall, Aaron [Duke University; Nguyen, Minh [Duke University; Wiley, Benjamin J [Duke University

    2012-01-01

    Nanowires of copper can be coated from liquids to create flexible, transparent conducting films that can potentially replace the dominant transparent conductor, indium tin oxide, in displays, solar cells, organic light-emitting diodes, and electrochromic windows. One issue with these nanowire films is that copper is prone to oxidation. It was hypothesized that the resistance to oxidation could be improved by coating copper nanowires with nickel. This work demonstrates a method for synthesizing copper nanowires with nickel shells as well as the properties of cupronickel nanowires in transparent conducting films. Time- and temperature-dependent sheet resistance measurements indicate that the sheet resistance of copper and silver nanowire films will double after 3 and 36 months at room temperature, respectively. In contrast, the sheet resistance of cupronickel nanowires containing 20 mol % nickel will double in about 400 years. Coating copper nanowires to a ratio of 2:1 Cu:Ni gave them a neutral gray color, making them more suitable for use in displays and electrochromic windows. These properties, and the fact that copper and nickel are 1000 times more abundant than indium or silver, make cupronickel nanowires a promising alternative for the sustainable, efficient production of transparent conductors.

  1. TiO2 nanowire-templated hierarchical nanowire network as water-repelling coating

    Science.gov (United States)

    Hang, Tian; Chen, Hui-Jiuan; Xiao, Shuai; Yang, Chengduan; Chen, Meiwan; Tao, Jun; Shieh, Han-ping; Yang, Bo-ru; Liu, Chuan; Xie, Xi

    2017-12-01

    Extraordinary water-repelling properties of superhydrophobic surfaces make them novel candidates for a great variety of potential applications. A general approach to achieve superhydrophobicity requires low-energy coating on the surface and roughness on nano- and micrometre scale. However, typical construction of superhydrophobic surfaces with micro-nano structure through top-down fabrication is restricted by sophisticated fabrication techniques and limited choices of substrate materials. Micro-nanoscale topographies templated by conventional microparticles through surface coating may produce large variations in roughness and uncontrollable defects, resulting in poorly controlled surface morphology and wettability. In this work, micro-nanoscale hierarchical nanowire network was fabricated to construct self-cleaning coating using one-dimensional TiO2 nanowires as microscale templates. Hierarchical structure with homogeneous morphology was achieved by branching ZnO nanowires on the TiO2 nanowire backbones through hydrothermal reaction. The hierarchical nanowire network displayed homogeneous micro/nano-topography, in contrast to hierarchical structure templated by traditional microparticles. This hierarchical nanowire network film exhibited high repellency to both water and cell culture medium after functionalization with fluorinated organic molecules. The hierarchical structure templated by TiO2 nanowire coating significantly increased the surface superhydrophobicity compared to vertical ZnO nanowires with nanotopography alone. Our results demonstrated a promising strategy of using nanowires as microscale templates for the rational design of hierarchical coatings with desired superhydrophobicity that can also be applied to various substrate materials.

  2. Fabrication of nanowires and nanostructures

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Piraux, L.

    2009-01-01

    We report on different approaches that we have adopted and developed for the fabrication of nanowires and nanostructures. Methods based on template synthesis and on self organization seem to be the most promising for the fabrication of nanomaterials and nanostructures due to their easiness and low...... cost. The development of a supported nanoporous alumina template and the possibility of using this template to combine electrochemical synthesis with lithographic methods open new ways for the fabrication of complex nanostructures. The numerous advantages of the supported template and its compatibility...

  3. Semiconductor Nanowires: What's Next?

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Peidong; Yan, Ruoxue; Fardy, Melissa

    2010-04-28

    In this perspective, we take a critical look at the research progress within the nanowire community for the past decade. We discuss issues on the discovery of fundamentally new phenomena versus performance benchmarking for many of the nanowire applications. We also notice that both the bottom-up and top-down approaches have played important roles in advancing our fundamental understanding of this new class of nanostructures. Finally we attempt to look into the future and offer our personal opinions on what the future trends will be in nanowire research.

  4. Rare earth silicide nanowires on silicon surfaces

    International Nuclear Information System (INIS)

    Wanke, Martina

    2008-01-01

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

  5. Perspectives of single cast nanowires technology

    International Nuclear Information System (INIS)

    Ioisher, Anatolii; Badinter, Efim; Postolache, Vitalie; Leporda, Nicolae; Tiginyanu, Ion; Monaico, Eduard

    2011-01-01

    The paper is dedicated to production potential of glass-coated cast nanowire with metal-, semimetal- and semiconductor-based cores by means of Taylor-Ulitovsky method. Criteria of melted core-formative material penetration into a drawing capillary were analyzed. Theoretical preconditions of the reduction of cast microwire diameter up to nano-dimensions of core are reviewed and an improved method of cast nanowire manufacturing is proposed. Correctness of conclusions was experimentally proved and laboratory samples of micro- and nano-wires with core diameter of about 200-300 nanometers were produced, even in case of materials with poor adhesion.

  6. Silicon nanowire-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S [Institute of Photonic Technology, Albert-Einstein-Strasse 9, D-07745 Jena (Germany)], E-mail: thomas.stelzner@ipht-jena.de

    2008-07-23

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm{sup 2} open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm{sup -2} were obtained.

  7. Silicon nanowire-based solar cells

    International Nuclear Information System (INIS)

    Stelzner, Th; Pietsch, M; Andrae, G; Falk, F; Ose, E; Christiansen, S

    2008-01-01

    The fabrication of silicon nanowire-based solar cells on silicon wafers and on multicrystalline silicon thin films on glass is described. The nanowires show a strong broadband optical absorption, which makes them an interesting candidate to serve as an absorber in solar cells. The operation of a solar cell is demonstrated with n-doped nanowires grown on a p-doped silicon wafer. From a partially illuminated area of 0.6 cm 2 open-circuit voltages in the range of 230-280 mV and a short-circuit current density of 2 mA cm -2 were obtained

  8. Electrospinning synthesis of superconducting BSCCO nanowires

    International Nuclear Information System (INIS)

    Duarte, Edgar A.; Quintero, Pedro A.; Meisel, Mark W.; Nino, Juan C.

    2013-01-01

    Highlights: •Bi 2 Sr 2 CaCu 2 O 8+x nanowires 150 nm to 250 nm thick are synthesized using the electrospinning. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained after a heat treatment at 850 °C. •Bi 2 Sr 2 CaCu 2 O 8+x nanowires show a T c = 78.7 K consistent with bulk superconductor behavior. -- Abstract: This paper presents the synthesis and characterization of Bi 2 Sr 2 CaCu 2 O 8+x superconducting nanowires. Bi 2 Sr 2 CaCu 2 O 8+x nanowires with a T c = 78.7 K are synthesized using the electrospinning process employing sol–gel precursors. A sol–gel methodology is used to obtain a homogeneous PVP solution containing Bi, Sr, Ca, and Cu acetates. Mats of randomly oriented nanowires and aligned nanowires are also collected. After a heat treatment at 850 °C in ambient atmosphere using heating rates of 100 and 400 °C/h, fully crystallized Bi 2 Sr 2 CaCu 2 O 8+x nanowires are obtained. The morphology, microstructure, and crystal structure of these nanowires are then examined to reveal a rectangular morphology having typical wire thickness in the range of 150–250 nm, and a wire width between 400 and 600 nm. DC magnetization studies are conducted to investigate the critical transition temperature (T c ) of Bi 2 Sr 2 CaCu 2 O 8+x nanowires and to compare their magnetic properties to those of bulk Bi 2 Sr 2 CaCu 2 O 8+x powder. The T c for the commercial powder is observed at 78.6 K, and that of the obtained nanowires at 78.7 K. These results point to the superconducting nature of Bi 2 Sr 2 CaCu 2 O 8+x nanowires, and the potential of the electrospinning process for the synthesis of this superconductor material

  9. Large-area perovskite nanowire arrays fabricated by large-scale roll-to-roll micro-gravure printing and doctor blading

    Science.gov (United States)

    Hu, Qiao; Wu, Han; Sun, Jia; Yan, Donghang; Gao, Yongli; Yang, Junliang

    2016-02-01

    Organic-inorganic hybrid halide perovskite nanowires (PNWs) show great potential applications in electronic and optoelectronic devices such as solar cells, field-effect transistors and photodetectors. It is very meaningful to fabricate ordered, large-area PNW arrays and greatly accelerate their applications and commercialization in electronic and optoelectronic devices. Herein, highly oriented and ultra-long methylammonium lead iodide (CH3NH3PbI3) PNW array thin films were fabricated by large-scale roll-to-roll (R2R) micro-gravure printing and doctor blading in ambient environments (humility ~45%, temperature ~28 °C), which produced PNW lengths as long as 15 mm. Furthermore, photodetectors based on these PNWs were successfully fabricated on both silicon oxide (SiO2) and flexible polyethylene terephthalate (PET) substrates and showed moderate performance. This study provides low-cost, large-scale techniques to fabricate large-area PNW arrays with great potential applications in flexible electronic and optoelectronic devices.Organic-inorganic hybrid halide perovskite nanowires (PNWs) show great potential applications in electronic and optoelectronic devices such as solar cells, field-effect transistors and photodetectors. It is very meaningful to fabricate ordered, large-area PNW arrays and greatly accelerate their applications and commercialization in electronic and optoelectronic devices. Herein, highly oriented and ultra-long methylammonium lead iodide (CH3NH3PbI3) PNW array thin films were fabricated by large-scale roll-to-roll (R2R) micro-gravure printing and doctor blading in ambient environments (humility ~45%, temperature ~28 °C), which produced PNW lengths as long as 15 mm. Furthermore, photodetectors based on these PNWs were successfully fabricated on both silicon oxide (SiO2) and flexible polyethylene terephthalate (PET) substrates and showed moderate performance. This study provides low-cost, large-scale techniques to fabricate large-area PNW arrays

  10. Template-based fabrication of nanowire-nanotube hybrid arrays

    International Nuclear Information System (INIS)

    Ye Zuxin; Liu Haidong; Schultz, Isabel; Wu Wenhao; Naugle, D G; Lyuksyutov, I

    2008-01-01

    The fabrication and structure characterization of ordered nanowire-nanotube hybrid arrays embedded in porous anodic aluminum oxide (AAO) membranes are reported. Arrays of TiO 2 nanotubes were first deposited into the pores of AAO membranes by a sol-gel technique. Co nanowires were then electrochemically deposited into the TiO 2 nanotubes to form the nanowire-nanotube hybrid arrays. Scanning electron microscopy and transmission electron microscopy measurements showed a high nanowire filling factor and a clean interface between the Co nanowire and the TiO 2 nanotube. Application of these hybrids to the fabrication of ordered nanowire arrays with highly controllable geometric parameters is discussed

  11. Biofunctionalization of zinc oxide nanowires for DNA sensory applications

    Directory of Open Access Journals (Sweden)

    Rudolph Bettina

    2011-01-01

    Full Text Available Abstract We report on the biofunctionalization of zinc oxide nanowires for the attachment of DNA target molecules on the nanowire surface. With the organosilane glycidyloxypropyltrimethoxysilane acting as a bifunctional linker, amino-modified capture molecule oligonucleotides have been immobilized on the nanowire surface. The dye-marked DNA molecules were detected via fluorescence microscopy, and our results reveal a successful attachment of DNA capture molecules onto the nanowire surface. The electrical field effect induced by the negatively charged attached DNA molecules should be able to control the electrical properties of the nanowires and gives way to a ZnO nanowire-based biosensing device.

  12. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    Science.gov (United States)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  13. Silicon nanowire hot carrier electroluminescence

    Energy Technology Data Exchange (ETDEWEB)

    Plessis, M. du, E-mail: monuko@up.ac.za; Joubert, T.-H.

    2016-08-31

    Avalanche electroluminescence from silicon pn junctions has been known for many years. However, the internal quantum efficiencies of these devices are quite low due to the indirect band gap nature of the semiconductor material. In this study we have used reach-through biasing and SOI (silicon-on-insulator) thin film structures to improve the internal power efficiency and the external light extraction efficiency. Both continuous silicon thin film pn junctions and parallel nanowire pn junctions were manufactured using a custom SOI technology. The pn junctions are operated in the reach-through mode of operation, thus increasing the average electric field within the fully depleted region. Experimental results of the emission spectrum indicate that the most dominant photon generating mechanism is due to intraband hot carrier relaxation processes. It was found that the SOI nanowire light source external power efficiency is at least an order of magnitude better than the comparable bulk CMOS (Complementary Metal Oxide Semiconductor) light source. - Highlights: • We investigate effect of electric field on silicon avalanche electroluminescence. • With reach-through pn junctions the current and carrier densities are kept constant. • Higher electric fields increase short wavelength radiation. • Higher electric fields decrease long wavelength radiation. • The effect of the electric field indicates intraband transitions as main mechanism.

  14. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng

    2010-01-13

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.

  15. Local lattice environment of indium in GaN, AlN, and InN; Lokale Gitterumgebung von Indium in GaN, AlN und InN

    Energy Technology Data Exchange (ETDEWEB)

    Penner, J

    2007-12-20

    After an introduction to the physical properties of the nitrides, their preparation, and the state of studies on the implantation in the nitrides the experimental method (PAC) applied in this thesis and the data analysis are presented. The next chapter describes then the applied materials and the sample preparation. The following chapters contain the PAC measurements on the annealing behaviout of GaN, AlN, and InN after the implantation as well as dose- and temperature dependent PAC studies. Finally the most important results are summarized.

  16. Quantification of nanowire uptake by live cells

    KAUST Repository

    Margineanu, Michael B.

    2015-01-01

    attempts have been made at tagging and investigating their interaction with living cells. In this study, magnetic iron nanowires with an iron oxide layer are coated with (3-Aminopropyl)triethoxysilane (APTES), and subsequently labeled with a fluorogenic p

  17. Micromagnetic simulations of cylindrical magnetic nanowires

    KAUST Repository

    Ivanov, Yurii P.; Chubykalo-Fesenko, O.

    2015-01-01

    This chapter reviews micromagnetic simulations of cylindrical magnetic nanowires and their ordered arrays. It starts with a description of the theoretical background of micromagnetism. The chapter discusses main magnetization reversal modes, domain

  18. Optical properties of nanowire metamaterials with gain

    DEFF Research Database (Denmark)

    Isidio de Lima, Joaquim Junior; Adam, Jost; Rego, Davi

    2016-01-01

    The transmittance, reflectance and absorption of a nanowire metamaterial with optical gain are numerically simulated and investigated. It is assumed that the metamaterial is represented by aligned silver nanowires embedded into a semiconductor matrix, made of either silicon or gallium phosphide....... The gain in the matrix is modeled by adding a negative imaginary part to the dielectric function of the semiconductor. It is found that the optical coefficients of the metamaterial depend on the gain magnitude in a non-trivial way: they can both increase and decrease with gain depending on the lattice...... constant of the metamaterial. This peculiar behavior is explained by the field redistribution between the lossy metal nanowires and the amplifying matrix material. These findings are significant for a proper design of nanowire metamaterials with low optical losses for diverse applications....

  19. Electrical conductivity measurements of bacterial nanowires from Pseudomonas aeruginosa

    International Nuclear Information System (INIS)

    Maruthupandy, Muthusamy; Anand, Muthusamy; Beevi, Akbar Sait Hameedha; Priya, Radhakrishnan Jeeva; Maduraiveeran, Govindhan

    2015-01-01

    The extracellular appendages of bacteria (flagella) that transfer electrons to electrodes are called bacterial nanowires. This study focuses on the isolation and separation of nanowires that are attached via Pseudomonas aeruginosa bacterial culture. The size and roughness of separated nanowires were measured using transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The obtained bacterial nanowires indicated a clear image of bacterial nanowires measuring 16 nm in diameter. The formation of bacterial nanowires was confirmed by microscopic studies (AFM and TEM) and the conductivity nature of bacterial nanowire was investigated by electrochemical techniques. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which are nondestructive voltammetry techniques, suggest that bacterial nanowires could be the source of electrons—which may be used in various applications, for example, microbial fuel cells, biosensors, organic solar cells, and bioelectronic devices. Routine analysis of electron transfer between bacterial nanowires and the electrode was performed, providing insight into the extracellular electron transfer (EET) to the electrode. CV revealed the catalytic electron transferability of bacterial nanowires and electrodes and showed excellent redox activities. CV and EIS studies showed that bacterial nanowires can charge the surface by producing and storing sufficient electrons, behave as a capacitor, and have features consistent with EET. Finally, electrochemical studies confirmed the development of bacterial nanowires with EET. This study suggests that bacterial nanowires can be used to fabricate biomolecular sensors and nanoelectronic devices. (paper)

  20. Silver Nanowire Arrays : Fabrication and Applications

    OpenAIRE

    Feng, Yuyi

    2016-01-01

    Nanowire arrays have increasingly received attention for their use in a variety of applications such as surface-enhanced Raman scattering (SERS), plasmonic sensing, and electrodes for photoelectric devices. However, until now, large scale fabrication of device-suitable metallic nanowire arrays on supporting substrates has seen very limited success. This thesis describes my work rst on the development of a novel successful processing route for the fabrication of uniform noble metallic (e.g. A...

  1. Optical Properties of Rotationally Twinned Nanowire Superlattices

    DEFF Research Database (Denmark)

    Bao, Jiming; Bell, David C.; Capasso, Federico

    2008-01-01

    We have developed a technique so that both transmission electron microscopy and microphotoluminescence can be performed on the same semiconductor nanowire over a large range of optical power, thus allowing us to directly correlate structural and optical properties of rotationally twinned zinc...... a heterostructure in a chemically homogeneous nanowire material and alter in a major way its optical properties opens new possibilities for band-structure engineering....

  2. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...

  3. Electrodeposition of rhenium-tin nanowires

    International Nuclear Information System (INIS)

    Naor-Pomerantz, Adi; Eliaz, Noam; Gileadi, Eliezer

    2011-01-01

    Highlights: → Rhenium-tin nanowires were formed electrochemically, without using a template. → The nanowires consisted of a crystalline-Sn-core/amorphous-Re-shell structure. → The effects of bath composition and operating conditions were investigated. → A mechanism is suggested for the formation of the core/shell structure. → The nanowires may be attractive for a variety of applications. - Abstract: Rhenium (Re) is a refractory metal which exhibits an extraordinary combination of properties. Thus, nanowires and other nanostructures of Re-alloys may possess unique properties resulting from both Re chemistry and the nanometer scale, and become attractive for a variety of applications, such as in catalysis, photovoltaic cells, and microelectronics. Rhenium-tin coatings, consisting of nanowires with a core/shell structure, were electrodeposited on copper substrates under galvanostatic or potentiostatic conditions. The effects of bath composition and operating conditions were investigated, and the chemistry and structure of the coatings were studied by a variety of analytical tools. A Re-content as high as 77 at.% or a Faradaic efficiency as high as 46% were attained. Ranges of Sn-to-Re in the plating bath, applied current density and applied potential, within which the nanowires could be formed, were determined. A mechanism was suggested, according to which Sn nanowires were first grown on top of Sn micro-particles, and then the Sn nanowires reduced the perrhenate chemically, thus forming a core made of crystalline Sn-rich phase, and a shell made of amorphous Re-rich phase. The absence of mutual solubility of Re and Sn may be the driving force for this phase separation.

  4. Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

    Science.gov (United States)

    Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Choi, Sang H.

    2012-01-01

    The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

  5. Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

    Science.gov (United States)

    Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

    2016-12-01

    Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

  6. Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

    International Nuclear Information System (INIS)

    Venkatachalapathy, Vishnukanthan; Galeckas, Augustinas; Lee, In-Hwan; Kuznetsov, Andrej Yu.

    2012-01-01

    ZnO properties were investigated as a function of AlN buffer layer thickness (0–100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

  7. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    International Nuclear Information System (INIS)

    Tamura, Kazuyuki; Kuroki, Yuichiro; Yasui, Kanji; Suemitsu, Maki; Ito, Takashi; Endou, Tetsuro; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

    2008-01-01

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH 3 ) and trimetylgallium (TMG) under low V/III source gas ratio (NH 3 /TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C 3 H 8 ). The AlN layer was deposited as a buffer layer using NH 3 and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH x radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer

  8. Growth of GaN on SiC/Si substrates using AlN buffer layer by hot-mesh CVD

    Energy Technology Data Exchange (ETDEWEB)

    Tamura, Kazuyuki [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)], E-mail: kazuyuki@stn.nagaokaut.ac.jp; Kuroki, Yuichiro; Yasui, Kanji [Nagaoka University of Technology, Nagaoka 940-2188 (Japan); Suemitsu, Maki; Ito, Takashi [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Endou, Tetsuro [Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577 (Japan); Nakazawa, Hideki [Faculty of Science and Technology, Hirosaki University, Hirosaki 036-8561 (Japan); Narita, Yuzuru [Center of Interdisciplinary Research, Tohoku University, Sendai 980-8578 (Japan); Takata, Masasuke; Akahane, Tadashi [Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2008-01-15

    GaN films were grown on SiC/Si (111) substrates by hot-mesh chemical vapor deposition (CVD) using ammonia (NH{sub 3}) and trimetylgallium (TMG) under low V/III source gas ratio (NH{sub 3}/TMG = 80). The SiC layer was grown by a carbonization process on the Si substrates using propane (C{sub 3}H{sub 8}). The AlN layer was deposited as a buffer layer using NH{sub 3} and trimetylaluminum (TMA). GaN films were formed and grown by the reaction between NH{sub x} radicals, generated on a tungsten hot mesh, and the TMG molecules. The GaN films with the AlN buffer layer showed better crystallinity and stronger near-band-edge emission compared to those without the AlN layer.

  9. Engineering of nearly strain-free ZnO films on Si(1 1 1) by tuning AlN buffer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Venkatachalapathy, Vishnukanthan, E-mail: vishnukanthan.venkatachalapathy@smn.uio.no [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Galeckas, Augustinas [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Lee, In-Hwan [School of Advanced Materials Engineering, Research Centre for Advanced Materials Development (RCAMD), Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Kuznetsov, Andrej Yu. [Department of Physics/Centre for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2012-05-15

    ZnO properties were investigated as a function of AlN buffer layer thickness (0-100 nm) in ZnO/AlN/Si(1 1 1) structures grown by metal organic vapor phase epitaxy. A significant improvement of ZnO film crystallinity by tuning AlN buffer thickness was confirmed by x-ray diffraction, topography and photoluminescence measurements. An optimal AlN buffer layer thickness of 50 nm is defined, which allows for growth of nearly strain-free ZnO films. The presence of free excitons at 10 K suggests high crystal quality for all ZnO samples grown on AlN/Si(1 1 1) templates. The intensities of neutral and ionized donor bound exciton lines are found to correlate with the in-plane and out-of-plane strain in the films, respectively.

  10. The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Lv, Yuanjie; Feng, Zhihong; Gu, Guodong; Han, Tingting; Yin, Jiayun; Liu, Bo; Cai, Shujun; Lin, Zhaojun; Ji, Ziwu; Zhao, Jingtao

    2014-01-01

    The electron mobility scattering mechanisms in AlN/GaN heterostuctures with 3 nm and 6 nm AlN barrier thicknesses were investigated by temperature-dependent Hall measurements. The effect of interface roughness (IFR) scattering on the electron mobility was found to be enhanced by increasing AlN barrier thickness. Moreover, using the measured capacitance-voltage and current-voltage characteristics of the fabricated heterostructure field-effect transistors (HFETs) with different Schottky areas on the two heterostuctures, the variations of electron mobility with different gate biases were investigated. Due to enhanced IFR scattering, the influence of polarization Coulomb field (PCF) scattering on electron mobility was found to decrease with increasing AlN barrier layer thickness. However, the PCF scattering remained an important scattering mechanism in the AlN/GaN HFETs.

  11. Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

    International Nuclear Information System (INIS)

    Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

    2002-01-01

    Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics

  12. Growth and characterization of bismuth telluride nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Picht, Oliver

    2010-05-26

    Polycrystalline Bi{sub 2}Te{sub 3} nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 {mu}m. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi{sub 2}Te{sub 3} and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 {mu}m thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  13. Constricted nanowire with stabilized magnetic domain wall

    International Nuclear Information System (INIS)

    Sbiaa, R.; Al Bahri, M.

    2016-01-01

    Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.

  14. Additional compound semiconductor nanowires for photonics

    Science.gov (United States)

    Ishikawa, F.

    2016-02-01

    GaAs related compound semiconductor heterostructures are one of the most developed materials for photonics. Those have realized various photonic devices with high efficiency, e. g., lasers, electro-optical modulators, and solar cells. To extend the functions of the materials system, diluted nitride and bismide has been paid attention over the past decade. They can largely decrease the band gap of the alloys, providing the greater tunability of band gap and strain status, eventually suppressing the non-radiative Auger recombinations. On the other hand, selective oxidation for AlGaAs is a vital technique for vertical surface emitting lasers. That enables precisely controlled oxides in the system, enabling the optical and electrical confinement, heat transfer, and mechanical robustness. We introduce the above functions into GaAs nanowires. GaAs/GaAsN core-shell nanowires showed clear redshift of the emitting wavelength toward infrared regime. Further, the introduction of N elongated the carrier lifetime at room temperature indicating the passivation of non-radiative surface recombinations. GaAs/GaAsBi nanowire shows the redshift with metamorphic surface morphology. Selective and whole oxidations of GaAs/AlGaAs core-shell nanowires produce semiconductor/oxide composite GaAs/AlGaOx and oxide GaOx/AlGaOx core-shell nanowires, respectively. Possibly sourced from nano-particle species, the oxide shell shows white luminescence. Those property should extend the functions of the nanowires for their application to photonics.

  15. Growth and characterization of bismuth telluride nanowires

    International Nuclear Information System (INIS)

    Picht, Oliver

    2010-01-01

    Polycrystalline Bi 2 Te 3 nanowires are electrochemically grown in ion track-etched polycarbonate membranes. Potentiostatic growth is demonstrated in templates of various thicknesses ranging from 10 to 100 μm. The smallest observed nanowire diameters are 20 nm in thin membranes and approx. 140-180 nm in thicker membranes. The influence of the various deposition parameters on the nanowire growth rate is presented. Slower growth rates are attained by selective change of deposition potentials and lower temperatures. Nanowires synthesized at slower growth rates have shown to possess a higher degree of crystalline order and smoother surface contours. With respect to structural properties, X-ray diffraction and transmission electron microscopy verified the growth of Bi 2 Te 3 and evidenced the stability of specific properties, e.g. grain size or preferential orientation, with regard to variations in the deposition conditions. The interdependency of the fabrication parameters, i.e. temperature, deposition potential and nanochannel diameters, is demonstrated for wires grown in 30 μm thick membranes. It is visible from diffraction analysis that texture is tunable by the growth conditions but depends also on the size of the nanochannels in the template. Both (015) and (110) reflexes are observed for the nanowire arrays. Energy dispersive X-ray analysis further points out that variation of nanochannel size could lead to a change in elemental composition of the nanowires. (orig.)

  16. Reversal modes in asymmetric Ni nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Leighton, B.; Pereira, A. [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Escrig, J., E-mail: jescrigm@gmail.com [Departamento de Fisica, Universidad de Santiago de Chile (USACH), Avda. Ecuador 3493, 917-0124 Santiago (Chile); Center for the Development of Nanoscience and Nanotechnology (CEDENNA), Avda. Ecuador 3493, 917-0124 Santiago (Chile)

    2012-11-15

    We have investigated the evolution of the magnetization reversal mechanism in asymmetric Ni nanowires as a function of their geometry. Circular nanowires are found to reverse their magnetization by the propagation of a vortex domain wall, while in very asymmetric nanowires the reversal is driven by the propagation of a transverse domain wall. The effect of shape asymmetry of the wire on coercivity and remanence is also studied. Angular dependence of the remanence and coercivity is also addressed. Tailoring the magnetization reversal mechanism in asymmetric nanowires can be useful for magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls. Finally, an alternative method to detect the presence of magnetic drops is proposed. - Highlights: Black-Right-Pointing-Pointer Asymmetry strongly modifies the magnetic behavior of a wire. Black-Right-Pointing-Pointer Very asymmetric nanowires reverse their magnetization by a transverse domain wall. Black-Right-Pointing-Pointer An alternative method to detect the presence of magnetic drops is proposed. Black-Right-Pointing-Pointer Tailoring the reversal mode in asymmetric nanowires can be useful for potential applications.

  17. Optical haze of randomly arranged silver nanowire transparent conductive films with wide range of nanowire diameters

    Directory of Open Access Journals (Sweden)

    M. Marus

    2018-03-01

    Full Text Available The effect of the diameter of randomly arranged silver nanowires on the optical haze of silver nanowire transparent conductive films was studied. Proposed simulation model behaved similarly with the experimental results, and was used to theoretically study the optical haze of silver nanowires with diameters in the broad range from 30 nm and above. Our results show that a thickening of silver nanowires from 30 to 100 nm results in the increase of the optical haze up to 8 times, while from 100 to 500 nm the optical haze increases only up to 1.38. Moreover, silver nanowires with diameter of 500 nm possess up to 5% lower optical haze and 5% higher transmittance than 100 nm thick silver nanowires for the same 10-100 Ohm/sq sheet resistance range. Further thickening of AgNWs can match the low haze of 30 nm thick AgNWs, but at higher transmittance. The results obtained from this work allow deeper analysis of the silver nanowire transparent conductive films from the perspective of the diameter of nanowires for various optoelectronic devices.

  18. Growth and characterization of a-axis oriented Cr-doped AlN films by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Panda, Padmalochan; Ramaseshan, R., E-mail: seshan@igcar.gov.in; Dash, S. [Materials Science Group, IGCAR, Kalpakkam, 603102 (India); Krishna, Nanda Gopala [Corrosion Science and Technology Group, IGCAR, Kalpakkam, 603102 (India)

    2016-05-23

    Wurtzite type Cr-doped AlN thin films were grown on Si (100) substrates using DC reactive magnetron sputtering with a function of N{sub 2} concentration (15 to 25%). Evolution of crystal structure of these films was studied by GIXRD where a-axis preferred orientation was observed. The electronic binding energy and concentration of Cr in these films were estimated by X-ray photoemission spectroscopy (XPS). We have observed indentation hardness (H{sub IT}) of around 28.2 GPa for a nitrogen concentration of 25%.

  19. Catalytic effect of Al and AlN interlayer on the growth and properties of containing carbon films

    International Nuclear Information System (INIS)

    Zhou, Bing; Liu, Zhubo; Tang, Bin; Rogachev, A.V.

    2015-01-01

    Highlights: • DLC and CN x bilayers with Al (AlN) interlayer were fabricated by cathode arc technique. • Complete diffusion of Al and C atoms occurs at the interface of Al/DLC (CN x ) bilayer. • Al/CN x bilayer presents a higher content of Csp 3 /Csp 2 bonds. • The hardness of Al/DLC bilayer decreases but increases for the other bilayers. • Morphology of the bilayers was explained by growth mechanism of DLC and surface state of substrate. - Abstract: Diamond-like carbon (DLC) and carbon nitride (CN x ) bilayer films with Al and AlN interlayer were fabricated by pulse cathode arc technique. The structure, composition, morphology and mechanical properties of the films were investigated by Raman, Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), Knoop sclerometer and surface profilometer. The results indicated that the complete diffusion between C and Al atoms occurs in the Al/DLC and Al/CN x bilayer. Al interlayer induces the increase of the size and ordering of Csp 2 clusters in the films but AlN interlayer increases the disordering degree of Csp 2 clusters. XPS results showed that a higher content of Csp 3 /Csp 2 bonds presents in the Al/CN x bilayer, and Al and AlN interlayer decreases the atomic ratio of N/C. AFM with phase contrast mode illustrated the morphologic characteristics of the bilayer films. All the bilayers show a nano-structural surface. The morphology changes of the bilayer were well explained by the surface state of the substrate and the growth mechanism of DLC films. The hardness of Al/DLC bilayer decreases but it increases for the other bilayers compared to the corresponding DLC (CN x ) monolayer. The internal stress of the bilayer is significantly lower than that of the monolayer except for the AlN/CN x bilayer. These studies could make the difference at the time of choosing a suitable functional film for certain application

  20. Resistance Fluctuations in GaAs Nanowire Grids

    Directory of Open Access Journals (Sweden)

    Ivan Marasović

    2014-01-01

    Full Text Available We present a numerical study on resistance fluctuations in a series of nanowire-based grids. Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly. Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure. Due to the nonhomogeneous doping, the resistivity changes along nanowire. Allowing two possible nanowire orientations (“upwards” or “downwards”, the resulting grid is partially disordered in vertical direction which causes resistance fluctuations. The system is modeled using a two-dimensional random resistor network. Transfer-matrix computation algorithm is used to calculate the total network resistance. It is found that probability density function (PDF of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.

  1. High energy ion irradiated III-N semiconductors (AlN, GaN, InN): study of point defect and extended defect creation

    International Nuclear Information System (INIS)

    Sall, Mamour

    2013-01-01

    Nitride semiconductors III N (AlN, GaN, InN) have interesting properties for micro-and opto-electronic applications. In use, they may be subjected to different types of radiation in a wide range of energy. In AlN, initially considered insensitive to electronic excitations (Se), we have demonstrated a novel type of synergy between Se and nuclear collisions (Sn) for the creation of defects absorbing at 4.7 eV. In addition, another effect of Se is highlighted in AlN: climb of screw dislocations under the influence of Se, at high fluence. In GaN, two mechanisms can explain the creation of defects absorbing at 2.8 eV: a synergy between Se and Sn, or a creation only due to Sn but with a strong effect of the size of displacement cascades. The study, by TEM, of the effects of Se in the three materials, exhibits behaviors highly dependent on the material while they all belong to the same family with the same atomic structure. Under monoatomic ion irradiations (velocity between 0.4 and 5 MeV/u), while discontinuous tracks are observed in GaN and InN, no track is observed in AlN with the highest electronic stopping power (33 keV/nm). Only fullerene clusters produce tracks in AlN. The inelastic thermal spike model was used to calculate the energies required to produce track in AlN, GaN and InN, they are 4.2 eV/atom, 1.5 eV/atom and 0.8 eV/atom, respectively. This sensitivity difference according to Se, also occurs at high fluence. (author)

  2. Ambient template synthesis of multiferroic MnWO4 nanowires and nanowire arrays

    International Nuclear Information System (INIS)

    Zhou Hongjun; Yiu Yuen; Aronson, M.C.; Wong, Stanislaus S.

    2008-01-01

    The current report describes the systematic synthesis of polycrystalline, multiferroic MnWO 4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions. We were able to synthesize nanowires measuring 55±10, 100±20, and 260±40 nm in diameter, respectively, with lengths ranging in the microns. Extensive characterization of as-prepared samples has been performed using X-ray diffraction, scanning electron microscopy, transmission electron microscopy (TEM), high-resolution TEM, and energy-dispersive X-ray spectroscopy. Magnetic behavior in these systems was also probed. - Graphical abstract: Systematic synthesis of crystalline, multiferroic MnWO4 nanowires and nanowire arrays with controllable chemical composition and morphology, using a modified template-directed methodology under ambient room-temperature conditions

  3. Long-range magnetostatic interactions in arrays of nanowires

    CERN Document Server

    Raposo, V; González, J M; Vázquez, M

    2000-01-01

    Experimental measurements and micromagnetic simulations of the hysteresis loops of arrays of cobalt nanowires are compared here. Arrays of cobalt nanowires (200 nm in diameter) were electrodeposited into the pores of alumina membranes (thickness 60 mu m). Their hysteresis loops along the axial direction of nanowires were measured using vibrating sample magnetometry. Micromagnetic simulations were performed considering dipolar interaction between nanowires leading to similar hysteresis loops as those obtained experimentally.

  4. A superconducting nanowire can be modeled by using SPICE

    Science.gov (United States)

    Berggren, Karl K.; Zhao, Qing-Yuan; Abebe, Nathnael; Chen, Minjie; Ravindran, Prasana; McCaughan, Adam; Bardin, Joseph C.

    2018-05-01

    Modeling of superconducting nanowire single-photon detectors typically requires custom simulations or finite-element analysis in one or two dimensions. Here, we demonstrate two simplified one-dimensional SPICE models of a superconducting nanowire that can quickly and efficiently describe the electrical characteristics of a superconducting nanowire. These models may be of particular use in understanding alternative architectures for nanowire detectors and readouts.

  5. Synthesis and characterization of Au incorporated Alq3 nanowires

    Science.gov (United States)

    Khan, Mohammad Bilal; Ahmad, Sultan; Parwaz, M.; Rahul, Khan, Zishan H.

    2018-05-01

    We report the synthesis and characterization of pure and Au incorporated Alq3 nanowires. These nanowires are synthesized using thermal vapor transport method. The luminescence intensity of Au incorporated Alq3 nanowires are recorded to be higher than that of pure Alq3 nanowires, which is found to increase with the increase in Au concentration. Fluorescence quenching is also observed when Au concentration is increased beyond the certain limit.

  6. Template synthesis of indium nanowires using anodic aluminum oxide membranes.

    Science.gov (United States)

    Chen, Feng; Kitai, Adrian H

    2008-09-01

    Indium nanowires with diameters approximately 300 nm have been synthesized by a hydraulic pressure technique using anodic aluminum oxide (AAO) templates. The indium melt is injected into the AAO template and solidified to form nanostructures. The nanowires are dense, continuous and uniformly run through the entire approximately 60 microm thickness of the AAO template. X-ray diffraction (XRD) reveals that the nanowires are polycrystalline with a preferred orientation. SEM is performed to characterize the morphology of the nanowires.

  7. Investigation of AlN films grown by molecular beam epitaxy on vicinal Si(111) as templates for GaN quantum dots

    International Nuclear Information System (INIS)

    Benaissa, M.; Vennegues, P.; Tottereau, O.; Nguyen, L.; Semond, F.

    2006-01-01

    The use of AlN epitaxial films deposited on vicinal Si(111) as templates for the growth of GaN quantum dots is investigated by transmission electron microscopy and atomic force microscopy. It is found that the substrate vicinality induces both a slight tilt of the AlN (0001) direction with respect to the [111] direction and a step bunching mechanism. As a consequence, a dislocation dragging behavior is observed giving rise to dislocation-free areas well suited for the nucleation of GaN quantum dots

  8. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Science.gov (United States)

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  9. Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

    Science.gov (United States)

    Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

    2017-08-01

    The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

  10. Nanowires: properties, applications and synthesis via porous anodic ...

    Indian Academy of Sciences (India)

    Moreover, periodic arrays of magnetic nanowires hold high potential for recording media application. Nanowires are also potential candidates for sensor and bio-medical applications. In the present article, the physical and chemical properties of nanowires along with their probable applications in different fields have been ...

  11. Failure mechanisms and electromechanical coupling in semiconducting nanowires

    Directory of Open Access Journals (Sweden)

    Peng B.

    2010-06-01

    Full Text Available One dimensional nanostructures, like nanowires and nanotubes, are increasingly being researched for the development of next generation devices like logic gates, transistors, and solar cells. In particular, semiconducting nanowires with a nonsymmetric wurtzitic crystal structure, such as zinc oxide (ZnO and gallium nitride (GaN, have drawn immense research interests due to their electromechanical coupling. The designing of the future nanowire-based devices requires component-level characterization of individual nanowires. In this paper, we present a unique experimental set-up to characterize the mechanical and electromechanical behaviour of individual nanowires. Using this set-up and complementary atomistic simulations, mechanical properties of ZnO nanowires and electromechanical properties of GaN nanowires were investigated. In ZnO nanowires, elastic modulus was found to depend on nanowire diameter decreasing from 190 GPa to 140 GPa as the wire diameter increased from 5 nm to 80 nm. Inconsistent failure mechanisms were observed in ZnO nanowires. Experiments revealed a brittle fracture, whereas simulations using a pairwise potential predicted a phase transformation prior to failure. This inconsistency is addressed in detail from an experimental as well as computational perspective. Lastly, in addition to mechanical properties, preliminary results on the electromechanical properties of gallium nitride nanowires are also reported. Initial investigations reveal that the piezoresistive and piezoelectric behaviour of nanowires is different from bulk gallium nitride.

  12. Controlled growth of single nanowires within a supported alumina template

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.

    2006-01-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire...

  13. Semiconductor Nanowires and Nanotubes for Energy Conversion

    Science.gov (United States)

    Fardy, Melissa Anne

    In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

  14. Quantification of nanowire uptake by live cells

    KAUST Repository

    Margineanu, Michael B.

    2015-05-01

    Nanostructures fabricated by different methods have become increasingly important for various applications at the cellular level. In order to understand how these nanostructures “behave” and for studying their internalization kinetics, several attempts have been made at tagging and investigating their interaction with living cells. In this study, magnetic iron nanowires with an iron oxide layer are coated with (3-Aminopropyl)triethoxysilane (APTES), and subsequently labeled with a fluorogenic pH-dependent dye pHrodo™ Red, covalently bound to the aminosilane surface. Time-lapse live imaging of human colon carcinoma HCT 116 cells interacting with the labeled iron nanowires is performed for 24 hours. As the pHrodo™ Red conjugated nanowires are non-fluorescent outside the cells but fluoresce brightly inside, internalized nanowires are distinguished from non-internalized ones and their behavior inside the cells can be tracked for the respective time length. A machine learning-based computational framework dedicated to automatic analysis of live cell imaging data, Cell Cognition, is adapted and used to classify cells with internalized and non-internalized nanowires and subsequently determine the uptake percentage by cells at different time points. An uptake of 85 % by HCT 116 cells is observed after 24 hours incubation at NW-to-cell ratios of 200. While the approach of using pHrodo™ Red for internalization studies is not novel in the literature, this study reports for the first time the utilization of a machine-learning based time-resolved automatic analysis pipeline for quantification of nanowire uptake by cells. This pipeline has also been used for comparison studies with nickel nanowires coated with APTES and labeled with pHrodo™ Red, and another cell line derived from the cervix carcinoma, HeLa. It has thus the potential to be used for studying the interaction of different types of nanostructures with potentially any live cell types.

  15. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    Science.gov (United States)

    Bernard, F.; Casset, F.; Danel, J. S.; Chappaz, C.; Basrour, S.

    2016-08-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm2. Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system.

  16. Characterization of a smartphone size haptic rendering system based on thin-film AlN actuators on glass substrates

    International Nuclear Information System (INIS)

    Bernard, F; Basrour, S; Casset, F; Danel, J S; Chappaz, C

    2016-01-01

    This paper presents for the first time the characterization of a smartphone-size haptic rendering system based on the friction modulation effect. According to previous work and finite element modeling, the homogeneous flexural modes are needed to get the haptic feedback effect. The device studied consists of a thin film AlN transducers deposited on an 110  ×  65 mm 2 glass substrate. The transducer’s localization on the glass plate allows a transparent central area of 90  ×  49 mm 2 . Electrical and mechanical parameters of the system are extracted from measurement. From this extraction, the electrical impedance matching reduced the applied voltage to 17.5 V AC and the power consumption to 1.53 W at the resonance frequency of the vibrating system to reach the haptic rendering specification. Transient characterizations of the actuation highlight a delay under the dynamic tactile detection. The characterization of the AlN transducers used as sensors, including the noise rejection, the delay or the output charge amplitude allows detections with high accuracy of any variation due to external influences. Those specifications are the first step to a low-power-consumption feedback-looped system. (paper)

  17. The Variations of Thermal Contact Resistance and Heat Transfer Rate of the AlN Film Compositing with PCM

    Directory of Open Access Journals (Sweden)

    Huann-Ming Chou

    2015-01-01

    Full Text Available The electrical industries have been fast developing over the past decades. Moreover, the trend of microelements and packed division multiplex is obviously for the electrical industry. Hence, the high heat dissipative and the electrical insulating device have been popular and necessary. The thermal conduct coefficient of aluminum nitride (i.e., AlN is many times larger than the other materials. Moreover, the green technology of composite with phase change materials (i.e., PCMs is worked as a constant temperature cooler. Therefore, PCMs have been used frequently for saving energy and the green environment. Based on the above statements, it does show great potential in heat dissipative for the AlN film compositing with PCM. Therefore, this paper is focused on the research of thermal contact resistance and heat transfer between the AlN/PCM pairs. According to the experimental results, the heat transfer decreases and the thermal contact resistance increases under the melting process of PCM. However, the suitable parameters such as contact pressures can be used to improve the above defects.

  18. Frequency response improvement of a two-port surface acoustic wave device based on epitaxial AlN thin film

    Science.gov (United States)

    Gao, Junning; Hao, Zhibiao; Luo, Yi; Li, Guoqiang

    2018-01-01

    This paper presents an exploration on improving the frequency response of the symmetrical two-port AlN surface acoustic wave (SAW) device, using epitaxial AlN thin film on (0001) sapphire as the piezoelectric substrate. The devices were fabricated by lift-off processes with Ti/Al composite electrodes as interleaved digital transducers (IDT). The impact of DL and the number of the IDT finger pairs on the frequency response was carefully investigated. The overall properties of the device are found to be greatly improved with DL elongation, indicated by the reduced pass band ripple and increased stop band rejection ratio. The rejection increases by 8.3 dB when DL elongates from 15.5λ to 55.5λ and 4.4 dB further accompanying another 50λ elongation. This is because larger DL repels the stray acoustic energy out of the propagation path and provides a cleaner traveling channel for functional SAW, and at the same time restrains electromagnetic feedthrough. It is also found that proper addition of the IDT finger pairs is beneficial for the device response, indicated by the ripple reduction and the insertion loss drop.

  19. Effect of Ga2O3 addition on the properties of Y2O3-doped AlN ceramics

    Directory of Open Access Journals (Sweden)

    Shin H.

    2015-01-01

    Full Text Available Effect Ga2O3 addition on the densification and properties of Y2O3-doped AlN ceramics was investigated under the constraint of total sintering additives (Y2O3 and Ga2O3 of 4.5 wt%. Ga was detected in the AlN grain as well as the grain boundary phases. YAlO3 and Y4Al2O9 were observed as the secondary crystalline phases in all of the investigated compositions. As the substitution of Ga2O3 for Y2O3 increased, the quantity of the Y4Al2O9 phase decreased while that of YAlO3 was more or less similar. Neither additional secondary phases was identified, nor was the sinterability inhibited by the Ga2O3 addition; the linear shrinkage and apparent density were above 20 percent and 3.34-3.37 g/cm3, respectively. However, the optical reflectance and the elastic modulus generally decreased whereas the Poisson ratio increased significantly. The dielectric constant and the loss tangent of 4.0Y2O3-0.5Ga2O3-95.5Y2O3 at the resonant frequency of 8.22 GHz were 8.63 and 0.003, respectively.

  20. High temperature electron cyclotron resonance etching of GaN, InN, and AlN

    International Nuclear Information System (INIS)

    Shul, R.J.; Kilcoyne, S.P.; Hagerott Crawford, M.; Parmeter, J.E.; Vartuli, C.B.; Abernathy, C.R.; Pearton, S.J.

    1995-01-01

    Electron cyclotron resonance etch rates for GaN, InN, and AlN are reported as a function of temperature for Cl 2 /H 2 /CH 4 /Ar and Cl 2 /H 2 /Ar plasmas. Using Cl 2 /H 2 /CH 4 /Ar plasma chemistry, GaN etch rates remain relatively constant from 30 to 125 degree C and then increase to a maximum of 2340 A/min at 170 degree C. The InN etch rate decreases monotonically from 30 to 150 degree C and then rapidly increases to a maximum of 2300 A/min at 170 degree C. This is the highest etch rate reported for this material. The AlN etch rate decreases throughout the temperature range studied with a maximum of 960 A/min at 30 degree C. When CH 4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III--V nitrides remains unchanged after exposure to the Cl 2 /H 2 /CH 4 /Ar plasma over the temperatures studied

  1. Point-Defect Nature of the Ultraviolet Absorption Band in AlN

    Science.gov (United States)

    Alden, D.; Harris, J. S.; Bryan, Z.; Baker, J. N.; Reddy, P.; Mita, S.; Callsen, G.; Hoffmann, A.; Irving, D. L.; Collazo, R.; Sitar, Z.

    2018-05-01

    We present an approach where point defects and defect complexes are identified using power-dependent photoluminescence excitation spectroscopy, impurity data from SIMS, and density-functional-theory (DFT)-based calculations accounting for the total charge balance in the crystal. Employing the capabilities of such an experimental computational approach, in this work, the ultraviolet-C absorption band at 4.7 eV, as well as the 2.7- and 3.9-eV luminescence bands in AlN single crystals grown via physical vapor transport (PVT) are studied in detail. Photoluminescence excitation spectroscopy measurements demonstrate the relationship between the defect luminescent bands centered at 3.9 and 2.7 eV to the commonly observed absorption band centered at 4.7 eV. Accordingly, the thermodynamic transition energy for the absorption band at 4.7 eV and the luminescence band at 3.9 eV is estimated at 4.2 eV, in agreement with the thermodynamic transition energy for the CN- point defect. Finally, the 2.7-eV PL band is the result of a donor-acceptor pair transition between the VN and CN point defects since nitrogen vacancies are predicted to be present in the crystal in concentrations similar to carbon-employing charge-balance-constrained DFT calculations. Power-dependent photoluminescence measurements reveal the presence of the deep donor state with a thermodynamic transition energy of 5.0 eV, which we hypothesize to be nitrogen vacancies in agreement with predictions based on theory. The charge state, concentration, and type of impurities in the crystal are calculated considering a fixed amount of impurities and using a DFT-based defect solver, which considers their respective formation energies and the total charge balance in the crystal. The presented results show that nitrogen vacancies are the most likely candidate for the deep donor state involved in the donor-acceptor pair transition with peak emission at 2.7 eV for the conditions relevant to PVT growth.

  2. Epitaxial AlN layers on sapphire and diamond; Epitaktische AlN-Schichten auf Saphir und Diamant

    Energy Technology Data Exchange (ETDEWEB)

    Hermann, Martin

    2009-04-27

    In this work, epitaxial AlN layers deposited by molecular beam epitaxy on sapphire and diamond substrates were investigated. Starting from this AlN, the dopant silicon was added. The influence of the silicon doping on the structural properties of the host AlN crystal was investigated using high resolution X-ray diffraction. Once the silicon concentration exceeds 1 x 10{sup 19} cm{sup -3}, a significant change of the AlN:Si crystal can be observed: increasing the silicon concentration up to 5 x 10{sup 20} cm{sup -3} results in a decrease of the a lattice parameter by approximately 1.2 pm and an increase of the c lattice parameter by about 1.0 pm. The crystal is stressed additionally by adding silicon resulting in a increase of the biaxial compressive stress of up to 2.0 GPa. Further increase of the silicon concentration leads to lattice relaxation. This result from X-ray diffraction was independently confirmed by Raman spectroscopy investigations. Further increase of the silicon concentration leads to the generation of polycrystalline phases within the epitaxial layer. XTEM measurements detected these polycrystalline phases. In addition, XTEM investigations confirmed also the increase of the lateral crystal size with increasing silicon concentration, as well as a great reduction of the screw dislocation density by more than one order of magnitude as found by X-ray diffraction: in undoped, nitrogen rich grown AlN layers the screw dislocation density is about 3 x 10{sup 8} cm{sup -2}, while AlN layers with a silicon concentration of 5 x 10{sup 20} cm{sup -3} show a screw dislocation density of only 1 x 10{sup 7} cm{sup -2}. In low-doped AlN:Si ([Si]{approx}2 x 10{sup 19} cm{sup -3}) the activation energy of the electronic conductivity is about 250 meV. Increasing the silicon concentration to about 1 x 10{sup 21} cm{sup -3} leads to an increase of the activation energy up to more than 500 meV in the now much more stressed AlN:Si epilayer. Studies of the absorption

  3. Nanowire Electrodes for Advanced Lithium Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang, E-mail: mlq518@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan (China)

    2014-10-27

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  4. Preparation and characterization of electrodeposited cobalt nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Irshad, M. I., E-mail: imrancssp@gmail.com; Mohamed, N. M., E-mail: noranimuti-mohamed@petronas.com.my [Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia); Ahmad, F., E-mail: faizahmad@petronas.com.my; Abdullah, M. Z., E-mail: zaki-abdullah@petronas.com.my [Department of Mechanical Engineering, Universiti Teknologi PETRONAS, 31750 PERAK (Malaysia)

    2014-10-24

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl{sub 2}Ðœ‡6H2O salt solution was used, which was buffered with H{sub 3}BO{sub 3} and acidified by dilute H{sub 2}SO{sub 4} to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications.

  5. Preparation and characterization of electrodeposited cobalt nanowires

    International Nuclear Information System (INIS)

    Irshad, M. I.; Mohamed, N. M.; Ahmad, F.; Abdullah, M. Z.

    2014-01-01

    Electrochemical deposition technique has been used to deposit cobalt nanowires into the nano sized channels of Anodized Aluminium Oxide (AAO) templates. CoCl 2 Ðœ‡6H2O salt solution was used, which was buffered with H 3 BO 3 and acidified by dilute H 2 SO 4 to increase the plating life and control pH of the solution. Thin film of copper around 150 nm thick on one side of AAO template coated by e-beam evaporation system served as cathode to create electrical contact. FESEM analysis shows that the as-deposited nanowires are highly aligned, parallel to one another and have high aspect ratio with a reasonably high pore-filing factor. The TEM results show that electrodeposited cobalt nanowires are crystalline in nature. The Hysteresis loop shows the magnetization properties for in and out of plane configuration. The in plane saturation magnetization (Ms) is lower than out of plane configuration because of the easy axis of magnetization is perpendicular to nanowire axis. These magnetic nanowires could be utilized for applications such as spintronic devices, high density magnetic storage, and magnetic sensor applications

  6. Growth Mechanism of Nanowires: Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  7. Nanowire Electrodes for Advanced Lithium Batteries

    Directory of Open Access Journals (Sweden)

    Lei eHuang

    2014-10-01

    Full Text Available Since the commercialization of lithium ion batteries (LIBs in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism needs to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reactions which limit the cycling performance of LIBs. Based on the in situ observations, some feasible structure architecture strategies, including prelithiation, coaxial structure, nanowire arrays and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some beyond Li-ion batteries, such as Li-S and Li-air battery, are also described.

  8. Nanowire Electrodes for Advanced Lithium Batteries

    International Nuclear Information System (INIS)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

    2014-01-01

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  9. Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range

    Czech Academy of Sciences Publication Activity Database

    Soltani, A.; Stolz, A.; Charrier, J.; Mattalah, M.; Gerbedoen, J.-C.; Barkad, H.A.; Mortet, Vincent; Rousseau, M.; Bourzgui, N.; BenMoussa, A.; De Jaeger, J.-C.

    2014-01-01

    Roč. 115, č. 16 (2014), "163515-1"-"163515-6" ISSN 0021-8979 Institutional support: RVO:68378271 Keywords : III-V semiconductors * AlN films * surface scattering * refractive index * optical properties Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  10. The temperature dependence of the Young's modulus of MgSiN2, AlN and Si3N4

    NARCIS (Netherlands)

    Bruls, R.J.; Hintzen, H.T.J.M.; With, de G.; Metselaar, R.

    2001-01-01

    The temperature dependence of the Young's modulus of MgSiN2 and AlN was measured between 293 and 973 K using the impulse excitation method and compared with literature data reported for Si3N4. The data could be fitted with . The values of the fitting parameters E0 and T0 are related to the Debye

  11. A first-principles study of the SCN− chemisorption on the surface of AlN, AlP, and BP nanotubes

    International Nuclear Information System (INIS)

    Soltani, Alireza; Taghartapeh, Mohammad Ramezani; Mighani, Hossein; Pahlevani, Amin Allah; Mashkoor, Reza

    2012-01-01

    Graphical abstract: Adsorption properties of SCN − on AlN, AlP, and BP nanotubes based on density functional theory. ▶ We demonstrate the most stable configurations (N-side) of SCN − on AlN, AlP, and BP nanotubes models. Highlights: ► The SCN − Adsorption on surface of AlN, AlP, and BP nanotubes were studied via density functional theory (DFT). ► The interaction of SCN − on the electronic properties and the NBO charge distribution of mentioned configurations are investigated. ► The studies suggest that the adsorption energies of SCN − on AlPNT is most notable in comparison with AlNNT and BPNT. - Abstract: We have performed first-principles calculations to explore the adsorption behavior of the SCN − on electronic properties of AlN, AlP, and BP nanotubes. The adsorption value of SCN − for the most stable formation on the AlPNT is about −318.16 kJ mol −1 , which is reason via the chemisorptions of SCN anion. The computed density of states (DOS) indicates that a notable orbital hybridization take place between SCN − and AlP nanotube in adsorption process. Finally, the AlP nanotube can be used to design as useful sensor for nanodevice applications.

  12. Microstructural analysis in the depth direction of a heteroepitaxial AlN thick film grown on a trench-patterned template by nanobeam X-ray diffraction

    Science.gov (United States)

    Shida, K.; Takeuchi, S.; Tohei, T.; Miyake, H.; Hiramatsu, K.; Sumitani, K.; Imai, Y.; Kimura, S.; Sakai, A.

    2018-04-01

    This work quantitatively assessed the three-dimensional distribution of crystal lattice distortions in an epitaxial AlN thick film grown on a trench-patterned template, using nanobeam X-ray diffraction. Position-dependent ω-2θ-φ mapping clearly demonstrated local tilting, spacing and twisting of lattice planes as well as fluctuations in these phenomena on a sub-micrometer scale comparable to the pitch of the trench-and-terrace patterning. Analysis of the crystal lattice distortion in the depth direction was performed using a newly developed method in which the X-ray nanobeam diffracted from the sample surface to specific depths can be selectively detected by employing a Pt wire profiler. This technique generated depth-resolved ω-2θ-φ maps confirming that fluctuations in lattice plane tilting and spacing greatly depend on the dislocation distribution and the history of the AlN epitaxial growth on the trench-patterned structure. It was also found that both fluctuations were reduced on approaching the AlN surface and, in particular, were sharply reduced at specific depths in the terrace regions. These sharp reductions are attributed to the formation of sacrificial zones with degraded crystal quality around the trenches and possibly lead to raising the crystal quality near the surface of the AlN film.

  13. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.; Alfadhel, Ahmed; Al-Nassar, Mohammed Y.; Perez, Jose E.; Vazquez, Manuel; Chuvilin, Andrey; Kosel, Jü rgen

    2016-01-01

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  14. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2010-09-03

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  15. Optical properties of indium phosphide nanowire ensembles at various temperatures

    International Nuclear Information System (INIS)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P

    2010-01-01

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  16. Preparation and characterization of CuO nanowire arrays

    International Nuclear Information System (INIS)

    Yu Dongliang; Ge Chuannan; Du Youwei

    2009-01-01

    CuO nanowire arrays were prepared by oxidation of copper nanowires embedded in anodic aluminum oxide (AAO) membranes. The AAO was fabricated in an oxalic acid at a constant voltage. Copper nanowires were formed in the nanopores of the AAO membranes in an electrochemical deposition process. The oxidized copper nanowires at different temperatures were studied. X-ray diffraction patterns confirmed the formation of a CuO phase after calcining at 500 0 C in air for 30 h. A transmission electron microscopy was used to characterize the nanowire morphologies. Raman spectra were performed to study the CuO nanowire arrays. After measuring, we found that the current-voltage curve of the CuO nanowires is nonlinear.

  17. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova; Ivanov, Yurii P.; Mohammed, Hanan; Kosel, Jü rgen

    2015-01-01

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires' cross-sections is thus a critical parameter that has not been previously taken into account.

  18. Vertically aligned nanowires from boron-doped diamond.

    Science.gov (United States)

    Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

    2008-11-01

    Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

  19. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.

    2016-04-13

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  20. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova

    2015-01-19

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires\\' cross-sections is thus a critical parameter that has not been previously taken into account.

  1. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  2. Thermoelectric properties of semiconductor nanowire networks

    Science.gov (United States)

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-01

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

  3. Plasmonic Waveguide-Integrated Nanowire Laser

    DEFF Research Database (Denmark)

    Bermudez-Urena, Esteban; Tutuncuoglu, Gozde; Cuerda, Javier

    2017-01-01

    Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication technolog......Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging from ultrasensitive sensing to data communication...... technologies. Despite significant advances in their fundamental aspects, the integration within scalable photonic circuitry remains challenging. Here we report on the realization of hybrid photonic devices consisting of nanowire lasers integrated with wafer-scale lithographically designed V-groove plasmonic...

  4. Longitudinal magnetoresistance and magnototermopower in Bi nanowires

    International Nuclear Information System (INIS)

    Para, G.

    2011-01-01

    Full text: The galvanomagnetic effect of single crystals Bi nanowires have been studied in longitudinal magnetic fields up to 14 T. The influence of diameters, temperature and deformation extension on the longitudinal magnetoresistance and magnetotermopower (H||I, H||ΔT) of bismuth nanowires is studied. Elastic deformation measurements were conducted at maximum relative elongation 2 %. For the first time have been investigated the magnetotermopower of Bi nanowires with d=45 nm. Essentially non monotonic dependence H max on temperature in longitudinal thermopower in wires with d=45-60 nm is found out. Such difference in behavior of maximum on R(H) and on α(H) in wires with d<100nm says that the behavior of resistance is caused by other mechanism, then thermopower. (author)

  5. Design and Characterisation of III-V Semiconductor Nanowire Lasers

    Science.gov (United States)

    Saxena, Dhruv

    The development of small, power-efficient lasers underpins many of the technologies that we utilise today. Semiconductor nanowires are promising for miniaturising lasers to even smaller dimensions. III-V semiconductors, such as Gallium Arsenide (GaAs) and Indium Phosphide (InP), are the most widely used materials for optoelectronic devices and so the development of nanowire lasers based on these materials is expected to have technologically significant outcomes. This PhD dissertation presents a comprehensive study of the design of III-V semiconductor nanowire lasers, with bulk and quantum confined active regions. Based on the design, various III-V semiconductor nanowire lasers are demonstrated, namely, GaAs nanowire lasers, GaAs/AlGaAs multi-quantum well (MQW) nanowire lasers and InP nanowire lasers. These nanowire lasers are shown to operate at room temperature, have low thresholds, and lase from different transverse modes. The structural and optoelectronic quality of nanowire lasers are characterised via electron microscopy and photoluminescence spectroscopic techniques. Lasing is characterised in all these devices by optical pumping. The lasing characteristics are analysed by rate equation modelling and the lasing mode(s) in these devices is characterised by threshold gain modelling, polarisation measurements and Fourier plane imaging. Firstly, GaAs nanowire lasers that operate at room temperature are demonstrated. This is achieved by determining the optimal nanowire diameter to reduce threshold gain and by passivating nanowires to improve their quantum efficiency (QE). High-quality surface passivated GaAs nanowires of suitable diameters are grown. The growth procedure is tailored to improve both QE and structural uniformity of nanowires. Room-temperature lasing is demonstrated from individual nanowires and lasing is characterised to be from TM01 mode by threshold gain modelling. To lower threshold even further, nanowire lasers with GaAs/AlGaAs coaxial multi

  6. Nanowire and microwire fabrication technique and product

    Energy Technology Data Exchange (ETDEWEB)

    Sumant, Anirudha V.; Zach, Michael; Marten, Alan David

    2018-02-27

    A continuous or semi-continuous process for fabricating nanowires or microwires makes use of the substantially planar template that may be moved through electrochemical solution to grow nanowires or microwires on exposed conductive edges on the surface of that template. The planar template allows fabrication of the template using standard equipment and techniques. Adhesive transfer may be used to remove the wires from the template and in one embodiment to draw a continuous wire from the template to be wound around the drum.

  7. Silicon nanowires for photovoltaic solar energy conversion.

    Science.gov (United States)

    Peng, Kui-Qing; Lee, Shuit-Tong

    2011-01-11

    Semiconductor nanowires are attracting intense interest as a promising material for solar energy conversion for the new-generation photovoltaic (PV) technology. In particular, silicon nanowires (SiNWs) are under active investigation for PV applications because they offer novel approaches for solar-to-electric energy conversion leading to high-efficiency devices via simple manufacturing. This article reviews the recent developments in the utilization of SiNWs for PV applications, the relationship between SiNW-based PV device structure and performance, and the challenges to obtaining high-performance cost-effective solar cells.

  8. Plasmon resonant cavities in vertical nanowire arrays

    Science.gov (United States)

    Bora, Mihail; Bond, Tiziana C.; Fasenfest, Benjamin J.; Behymer, Elaine M.

    2014-07-15

    Tunable plasmon resonant cavity arrays in paired parallel nanowire waveguides are presented. Resonances can be observed when the waveguide length is an odd multiple of quarter plasmon wavelengths, consistent with boundary conditions of node and antinode at the ends. Two nanowire waveguides can satisfy the dispersion relation of a planar metal-dielectric-metal waveguide of equivalent width equal to the square field average weighted gap. Confinement factors of over 10.sup.3 are possible due to plasmon focusing in the inter-wire space.

  9. Nanowires and nanostructures fabrication using template methods

    DEFF Research Database (Denmark)

    Mátéfi-Tempfli, Stefan; Mátéfi-Tempfli, M.; Vlad, A.

    2009-01-01

    One of the great challenges of today is to find reliable techniques for the fabrication of nanomaterials and nanostructures. Methods based on template synthesis and on self organization are the most promising due to their easiness and low cost. This paper focuses on the electrochemical synthesis ...... of nanowires and nanostructures using nanoporous host materials such as supported anodic aluminum considering it as a key template for nanowires based devices. New ways are opened for applications by combining such template synthesis methods with nanolithographic techniques....

  10. Smooth Nanowire/Polymer Composite Transparent Electrodes

    KAUST Repository

    Gaynor, Whitney; Burkhard, George F.; McGehee, Michael D.; Peumans, Peter

    2011-01-01

    Smooth composite transparent electrodes are fabricated via lamination of silver nanowires into the polymer poly-(4,3-ethylene dioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS). The surface roughness is dramatically reduced compared to bare nanowires. High-efficiency P3HT:PCBM organic photovoltaic cells can be fabricated using these composites, reproducing the performance of cells on indium tin oxide (ITO) on glass and improving the performance of cells on ITO on plastic. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Enhanced magnetotransport in nanopatterned manganite nanowires.

    Science.gov (United States)

    Marín, Lorena; Morellón, Luis; Algarabel, Pedro A; Rodríguez, Luis A; Magén, César; De Teresa, José M; Ibarra, Manuel R

    2014-02-12

    We have combined optical and focused ion beam lithographies to produce large aspect-ratio (length-to-width >300) single-crystal nanowires of La2/3Ca1/3MnO3 that preserve their functional properties. Remarkably, an enhanced magnetoresistance value of 34% in an applied magnetic field of 0.1 T in the narrowest 150 nm nanowire is obtained. The strain release at the edges together with a destabilization of the insulating regions is proposed to account for this behavior. This opens new strategies to implement these structures in functional spintronic devices.

  12. Smooth Nanowire/Polymer Composite Transparent Electrodes

    KAUST Repository

    Gaynor, Whitney

    2011-04-29

    Smooth composite transparent electrodes are fabricated via lamination of silver nanowires into the polymer poly-(4,3-ethylene dioxythiophene): poly(styrene-sulfonate) (PEDOT:PSS). The surface roughness is dramatically reduced compared to bare nanowires. High-efficiency P3HT:PCBM organic photovoltaic cells can be fabricated using these composites, reproducing the performance of cells on indium tin oxide (ITO) on glass and improving the performance of cells on ITO on plastic. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Transport Phenomena in Nanowires, Nanotubes, and Other Low-Dimensional Systems

    KAUST Repository

    Montes Muñ oz, Enrique

    2017-01-01

    and their dependence on the nanowire growth direction, diameter, and length. At equilibrium Au-nanowire distance we find strong electronic coupling between electrodes and nanowire, resulting in low contact resistance. For the tunneling regime, the decay

  14. Brownian motion of tethered nanowires.

    Science.gov (United States)

    Ota, Sadao; Li, Tongcang; Li, Yimin; Ye, Ziliang; Labno, Anna; Yin, Xiaobo; Alam, Mohammad-Reza; Zhang, Xiang

    2014-05-01

    Brownian motion of slender particles near a boundary is ubiquitous in biological systems and in nanomaterial assembly, but the complex hydrodynamic interaction in those systems is still poorly understood. Here, we report experimental and computational studies of the Brownian motion of silicon nanowires tethered on a substrate. An optical interference method enabled direct observation of microscopic rotations of the slender bodies in three dimensions with high angular and temporal resolutions. This quantitative observation revealed anisotropic and angle-dependent hydrodynamic wall effects: rotational diffusivity in inclined and azimuth directions follows different power laws as a function of the length, ∼ L(-2.5) and ∼ L(-3), respectively, and is more hindered for smaller inclined angles. In parallel, we developed an implicit simulation technique that takes the complex wire-wall hydrodynamic interactions into account efficiently, the result of which agreed well with the experimentally observed angle-dependent diffusion. The demonstrated techniques provide a platform for studying the microrheology of soft condensed matters, such as colloidal and biological systems near interfaces, and exploring the optimal self-assembly conditions of nanostructures.

  15. Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Luchan; Zhou, Y. Norman, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Zou, Guisheng; Liu, Lei, E-mail: liulei@tsinghua.edu.cn, E-mail: nzhou@uwaterloo.ca [Department of Mechanical Engineering, State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China); Duley, Walt W. [Centre for Advanced Materials Joining, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Department of Physics and Astronomy, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2016-05-16

    We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO{sub 2} structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO{sub 2} resulting in the modification of both surfaces and an increase in wettability of TiO{sub 2}, facilitating the interconnection of Ag and TiO{sub 2} nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO{sub 2} in the contact region between the Ag and TiO{sub 2} nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO{sub 2} nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

  16. Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

    International Nuclear Information System (INIS)

    Yan Shancheng; Sun Litao; Qu Peng; Huang Ninping; Song Yinchen; Xiao Zhongdang

    2009-01-01

    Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. - Graphical abstract: Large-scale high quality CdS nanowires (NWs) with uniform diameter were synthesized by using a rapid and simple solvothermal route. The reaction time is reduced to 2 h, comparing to other synthesis which needed long reaction time up to 12 h. In addition, the as-prepared CdS nanowires have more uniform diameter and high yield. More importantly, the I-V curve of present single CdS nanowire has a good symmetric characteristic as expected by the theory.

  17. Study of spin dynamics and damping on the magnetic nanowire arrays with various nanowire widths

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Jaehun [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Fujii, Yuya; Konioshi, Katsunori [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Yoon, Jungbum [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Kim, Nam-Hui; Jung, Jinyong [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of); Miwa, Shinji [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Jung, Myung-Hwa [Department of Physics, Sogang University, Seoul, 121-742 (Korea, Republic of); Suzuki, Yoshishige [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); You, Chun-Yeol, E-mail: cyyou@inha.ac.kr [Department of Physics, Inha University, Incheon, 402-751 (Korea, Republic of)

    2016-07-01

    We investigate the spin dynamics including Gilbert damping in the ferromagnetic nanowire arrays. We have measured the ferromagnetic resonance of ferromagnetic nanowire arrays using vector-network analyzer ferromagnetic resonance (VNA-FMR) and analyzed the results with the micromagnetic simulations. We find excellent agreement between the experimental VNA-FMR spectra and micromagnetic simulations result for various applied magnetic fields. We find that the same tendency of the demagnetization factor for longitudinal and transverse conditions, N{sub z} (N{sub y}) increases (decreases) as increasing the nanowire width in the micromagnetic simulations while N{sub x} is almost zero value in transverse case. We also find that the Gilbert damping constant increases from 0.018 to 0.051 as the increasing nanowire width for the transverse case, while it is almost constant as 0.021 for the longitudinal case. - Highlights: • We investigate the spin dynamic properties in the ferromagnetic nanowire arrays. • The demagnetization factors have similar tendency with the prism geometry results. • The Gilbert damping constant is increased from 0.018 to 0.051 as the increasing nanowire width for the transverse. • The Gilbert damping constant is almost constant as 0.021 for the longitudinal case.

  18. Plasmonic engineering of metal-oxide nanowire heterojunctions in integrated nanowire rectification units

    Science.gov (United States)

    Lin, Luchan; Zou, Guisheng; Liu, Lei; Duley, Walt W.; Zhou, Y. Norman

    2016-05-01

    We show that irradiation with femtosecond laser pulses can produce robust nanowire heterojunctions in coupled non-wetting metal-oxide Ag-TiO2 structures. Simulations indicate that joining arises from the effect of strong plasmonic localization in the region of the junction. Strong electric field effects occur in both Ag and TiO2 resulting in the modification of both surfaces and an increase in wettability of TiO2, facilitating the interconnection of Ag and TiO2 nanowires. Irradiation leads to the creation of a thin layer of highly defected TiO2 in the contact region between the Ag and TiO2 nanowires. The presence of this layer allows the formation of a heterojunction and offers the possibility of engineering the electronic characteristics of interfacial structures. Rectifying junctions with single and bipolar properties have been generated in Ag-TiO2 nanowire circuits incorporating asymmetrical and symmetrical interfacial structures, respectively. This fabrication technique should be applicable for the interconnection of other heterogeneous metal-oxide nanowire components and demonstrates that femtosecond laser irradiation enables interfacial engineering for electronic applications of integrated nanowire structures.

  19. In Situ Synthesis of Al-Based MMCs Reinforced with AlN by Mechanical Alloying under NH3 Gas

    Directory of Open Access Journals (Sweden)

    E. S. Caballero

    2018-05-01

    Full Text Available Aluminum matrix composites (AMCs reinforced by aluminum nitride were prepared by mechanical alloying followed by a simple press and sintering method. Milling began under vacuum and after a period of between 1 and 4 h, NH3 gas flow (1 cm3/s was incorporated until the total milling time of 5 h was reached. Results show that in addition to the strain hardening taking place during mechanical alloying, NH3 plays an additional role in powder hardening. Thereby, the properties of the sintered compacts are strongly influenced by the amount of N incorporated into the powders during milling and the subsequent formation of AlN during the consolidation process. The obtained AMC reaches tensile strengths as high as 459 MPa and hardness much higher than that of the as-received aluminum compact.

  20. The Self- and Directed Assembly of Nanowires

    Science.gov (United States)

    Smith, Benjamin David

    This thesis explores the self- and directed assembly of nanowires. Specifically, we examine the driving forces behind nanowire self-assembly and the macro-structures that are formed. Particle-dense, oriented nanowire structures show promise in the fields of photonics, energy, sensing, catalysis, and electronics. Arrays of spherical particles have already found uses in electronic inks, sensing arrays, and many other commercial applications; but, it is a challenge to create specific arrays of morphologically and/or compositionally anisotropic particles. The following chapters illuminate the interactions that drive the assembly of anisotropic particles in high density solutions in the absence of applied fields or solution drying. Special emphasis is placed on the structures that are formed. The properties of micro- and nanoparticles and their assembly are introduced in Chapter 1. In particular, the properties of shape and material anisotropic particles are highlighted, while challenges in producing desired arrays are discussed. In this thesis, metallic nanowires of increasing complexity were used to examine the self-assembly behavior of both shape and material anisotropic particles. Nanowires were synthesized through templated electrodeposition. In this process, porous alumina membranes served as a template in which metal salts were reduced to form particles. Upon template dissolution, billions of nominally identical particles were released. We specifically focused on segmented, metallic nanowires 2-13 mum in length and 180 to 350 nm in diameter. Since these particles have strong van der Waals (VDWs) attractions, an electrostatically repulsive coating was necessary to prevent aggregation; we used small molecule, DNA, or amorphous silica coatings. Nanowires and their coatings were characterized by electron microscopy. In order to study self-assembly behavior, particle-dense aqueous suspensions were placed within an assembly chamber defined by a silicone spacer. The

  1. Molecular motor transport through hollow nanowires

    DEFF Research Database (Denmark)

    Lard, Mercy; Ten Siethoff, Lasse; Generosi, Johanna

    2014-01-01

    -driven motion of fluorescent probes (actin filaments) through 80 nm wide, Al2O 3 hollow nanowires of micrometer length. The motor-driven transport is orders of magnitude faster than would be possible by passive diffusion. The system represents a necessary element for advanced devices based on gliding assays...

  2. Synthesis and characterization of silver molybdate nanowires ...

    Indian Academy of Sciences (India)

    Wintec

    UV-visible spectrum of silver molybdate nanorods/nanowires shows maximum absorbance at 408 nm. Photo- .... trometer using Xe lamp with an excitation wavelength of. 330 nm. 3. ... ment of (NH4)6Mo7O24 with AgNO3 led to the formation.

  3. Doping assessment in GaAs nanowires

    DEFF Research Database (Denmark)

    Goktas, N. Isik; Fiordaliso, Elisabetta Maria; LaPierre, R. R.

    2018-01-01

    Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic devices. One of the critical issues in NWs is the control of impurity doping for the formation of p-n junctions. In this study, beryllium (p-type dopant) and tellurium (n-type dopant) in self-assisted GaAs NWs...

  4. Broadband Nonlinear Signal Processing in Silicon Nanowires

    DEFF Research Database (Denmark)

    Yvind, Kresten; Pu, Minhao; Hvam, Jørn Märcher

    The fast non-linearity of silicon allows Tbit/s optical signal processing. By choosing suitable dimensions of silicon nanowires their dispersion can be tailored to ensure a high nonlinearity at power levels low enough to avoid significant two-photon abso We have fabricated low insertion...

  5. Printing nanotube/nanowire for flexible microsystems

    Science.gov (United States)

    Tortorich, Ryan P.; Choi, Jin-Woo

    2014-04-01

    Printing has become an emerging manufacturing technology for mechanics, electronics, and consumer products. Additionally, both nanotubes and nanowires have recently been used as materials for sensors and electrodes due to their unique electrical and mechanical properties. Printed electrodes and conductive traces particularly offer versatility of fabricating low-cost, disposable, and flexible electrical devices and microsystems. While various printing methods such as screen printing have been conventional methods for printing conductive traces and electrodes, inkjet printing has recently attracted great attention due to its unique advantages including no template requirement, rapid printing at low cost, on-demand printing capability, and precise control of the printed material. Computer generated conductive traces or electrode patterns can simply be printed on a thin film substrate with proper conductive ink consisting of nanotubes or nanowires. However, in order to develop nanotube or nanowire ink, there are a few challenges that need to be addressed. The most difficult obstacle to overcome is that of nanotube/nanowire dispersion within a solution. Other challenges include adjusting surface tension and controlling viscosity of the ink as well as treating the surface of the printing substrate. In an attempt to pave the way for nanomaterial inkjet printing, we present a method for preparing carbon nanotube ink as well as its printing technique. A fully printed electrochemical sensor using inkjet-printed carbon nanotube electrodes is also demonstrated as an example of the possibilities for this technology.

  6. Lasing in nanowires: Ab initio semiclassical model

    DEFF Research Database (Denmark)

    Bordo, Vladimir

    2013-01-01

    The semiclassical equations which describe lasing in nanowires are derived from first principles. Both the lasing threshold condition and the steady-state regime of operation are discussed. It is shown that the lasing is governed by the Fourier coefficients of the field susceptibility averaged ov...

  7. Ab initio vibrations in nonequilibrium nanowires

    DEFF Research Database (Denmark)

    Jauho, Antti-Pekka; Engelund, Mads; Markussen, T

    2010-01-01

    We review recent results on electronic and thermal transport in two different quasi one-dimensional systems: Silicon nanowires (SiNW) and atomic gold chains. For SiNW's we compute the ballistic electronic and thermal transport properties on equal footing, allowing us to make quantitative predicti...

  8. Superconducting InSb nanowire devices

    NARCIS (Netherlands)

    Szombati, D.B.

    2017-01-01

    Josephson junctions form a two-level system which is used as a building block for many types of superconducting qubits. Junctions fabricated from semiconducting nanowires are gate-tunable and offer electrostatically adjustable Josephson energy, highly desirable in qubit architecture. Studying

  9. In Situ TEM Creation of Nanowire Devices

    DEFF Research Database (Denmark)

    Alam, Sardar Bilal

    Integration of silicon nanowires (SiNWs) as active components in devices requires that desired mechanical, thermal and electrical interfaces can be established between the nanoscale geometry of the SiNW and the microscale architecture of the device. In situ transmission electron microscopy (TEM),...

  10. Direct observation of nanowire growth and decomposition

    DEFF Research Database (Denmark)

    Rackauskas, Simas; Shandakov, Sergey D; Jiang, Hua

    2017-01-01

    knowledge, so far this has been only postulated, but never observed at the atomic level. By means of in situ environmental transmission electron microscopy we monitored and examined the atomic layer transformation at the conditions of the crystal growth and its decomposition using CuO nanowires selected...

  11. Silicon Nanowire Field-effect Chemical Sensor

    NARCIS (Netherlands)

    Chen, S.

    2011-01-01

    This thesis describes the work that has been done on the project “Design and optimization of silicon nanowire for chemical sensing‿, including Si-NW fabrication, electrical/electrochemical modeling, the application as ISFET, and the build-up of Si- NW/LOC system for automatic sample delivery. A

  12. Zigzag and Helical AlN Layer Prepared by Glancing Angle Deposition and Its Application as a Buffer Layer in a GaN-Based Light-Emitting Diode

    Directory of Open Access Journals (Sweden)

    Lung-Chien Chen

    2012-01-01

    Full Text Available This study investigates an aluminum nitride (AlN nanorod structure sputtered by glancing angle deposition (GLAD and its application as a buffer layer for GaN-based light-emitting diodes (LEDs that are fabricated on sapphire substrates. The ray tracing method is adopted with a three-dimensional model in TracePro software. Simulation results indicate that the zigzag AlN nanorod structure is an optimal buffer layer in a GaN-based LED. Furthermore, the light output power of a GaN-based LED with a zigzag AlN nanorod structure improves to as much as 28.6% at a forward current of 20 mA over that of the GaN-based LED with a normal AlN buffer layer.

  13. Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

    Science.gov (United States)

    Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

    2015-10-01

    A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

  14. Estudo da viabilidade de obtenção de cerâmicas de SiC por infiltração espontânea de misturas eutéticas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN Study of the viability to produce SiC ceramics by Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN spontaneous infiltration

    Directory of Open Access Journals (Sweden)

    G. C. R. Garcia

    2008-06-01

    Full Text Available As cerâmicas de carbeto de silício, SiC, apresentam excelentes propriedades quando obtidas por infiltração de determinados líquidos. Na infiltração o tempo de contato entre o líquido e o SiC a temperaturas elevadas é muito curto, diminuindo a probabilidade de formação dos produtos gasosos que interferem negativamente na resistência da peça final, como ocorre na sinterização via fase líquida. O objetivo deste trabalho é mostrar uma correlação entre molhabilidade e capacidade de infiltração de alguns aditivos em compactos de SiC. Foram preparados compactos de SiC por prensagem isostática a frio e posterior pré-sinterização via fase sólida. Nesses compactos foram infiltradas misturas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN, nas composições eutéticas, 10 ºC acima da temperatura de fusão das respectivas misturas por 4, 8 e 12 min. Após infiltração, as amostras foram analisadas quanto à densidade aparente e real, fases cristalinas, microestrutura e grau de infiltração, sendo que as amostras infiltradas com Y2O3-AlN apresentaram melhores resultados.Silicon carbide ceramics, SiC, obtained by liquid infiltration have shown excellent properties. In infiltration process the contact time of the liquid with SiC at elevated temperature is short, decreasing the probability to form gaseous products that contribute negatively in the final product properties. This phenomenon occurs during SiC liquid phase sintering. The purpose of the present study was to investigate the correlation between wettability and infiltration tendency of some additives in SiC compacts. SiC compacts were prepared by cold isostatic pressing followed by solid phase pre-sintering. Into the compacts were introduced Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN liquids with eutectic compositions at a temperature 10 ºC higher than the melting point of each mixture for 4, 8 and 12 min. Before infiltration, the samples were analyzed by determining densities, crystalline phases

  15. The Role of Surface Passivation in Controlling Ge Nanowire Faceting.

    Science.gov (United States)

    Gamalski, A D; Tersoff, J; Kodambaka, S; Zakharov, D N; Ross, F M; Stach, E A

    2015-12-09

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. These results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, ⟨111⟩-oriented nanowires.

  16. Electroless Fabrication of Cobalt Alloys Nanowires within Alumina Template

    Directory of Open Access Journals (Sweden)

    Nazila Dadvand

    2007-01-01

    Full Text Available A new method of nanowire fabrication based on electroless deposition process is described. The method is novel compared to the current electroless procedure used in making nanowires as it involves growing nanowires from the bottom up. The length of the nanowires was controlled at will simply by adjusting the deposition time. The nanowires were fabricated within the nanopores of an alumina template. It was accomplished by coating one side of the template by a thin layer of palladium in order to activate the electroless deposition within the nanopores from bottom up. However, prior to electroless deposition process, the template was pretreated with a suitable wetting agent in order to facilitate the penetration of the plating solution through the pores. As well, the electroless deposition process combined with oblique metal evaporation process within a prestructured silicon wafer was used in order to fabricate long nanowires along one side of the grooves within the wafer.

  17. Electrodeposited highly-ordered manganese oxide nanowire arrays for supercapacitors

    Science.gov (United States)

    Liu, Haifeng; Lu, Bingqiang; Wei, Shuiqiang; Bao, Mi; Wen, Yanxuan; Wang, Fan

    2012-07-01

    Large arrays of well-aligned Mn oxide nanowires were prepared by electrodeposition using anodic aluminum oxide templates. The sizes of nanowires were tuned by varying the electrotype solution involved and the MnO2 nanowires with 10 μm in length were obtained in a neutral KMnO4 bath for 1 h. MnO2 nanowire arrays grown on conductor substance save the tedious electrode-making process, and electrochemical characterization demonstrates that the MnO2 nanowire arrays electrode has good capacitive behavior. Due to the limited mass transportation in narrow spacing, the spacing effects between the neighbor nanowires have show great influence to the electrochemical performance.

  18. Ultraviolet photodetectors made from SnO2 nanowires

    International Nuclear Information System (INIS)

    Wu, Jyh-Ming; Kuo, Cheng-Hsiang

    2009-01-01

    SnO 2 nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO 2 nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO 2 nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 o C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.

  19. Synthesis of SERS active Au nanowires in different noncoordinating solvents

    Energy Technology Data Exchange (ETDEWEB)

    Hou Xiaomiao; Zhang Xiaoling, E-mail: zhangxl@bit.edu.cn [Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Department of Chemistry, School of Science (China); Fang Yan, E-mail: fangyan@mail.cnu.edu.cn [Beijing Key Laboratory for Nano-Photonics and Nano-Structure (NPNS), Capital Normal University (China); Chen Shutang; Li Na; Zhou Qi [Key Laboratory of Cluster Science of Ministry of Education, Beijing Institute of Technology, Department of Chemistry, School of Science (China)

    2011-06-15

    Au nanowires with length up to micrometers were synthesized through a simple and one-pot solution growth method. HAuCl{sub 4} was reduced in a micellar structure formed by 1-octadecylamine and oleic acid in hexane, heptane, toluene and chloroform, respectively. As the non-polarity of noncoordinating solvents can affect the nucleation and growth rates of Au nanostructures, Au nanowires with different diameters could be obtained by changing the noncoordinating solvents in the synthetic process. The influences of the solvents on the morphology of Au nanowires were systematically studied. When using hexane as reaction solvent, the product turned to be high portion of Au nanowires with more uniform size than the others. Furthermore, surface-enhanced Raman scattering (SERS) spectrum of 2-thionaphthol was obtained on the Au nanowire-modified substrate, indicating that the as-synthesized Au nanowires have potential for highly sensitive optical detection application.

  20. Synthesis and electrical characterization of tungsten oxide nanowires

    Institute of Scientific and Technical Information of China (English)

    Huang Rui; Zhu Jing; Yu Rong

    2009-01-01

    Tungsten oxide nanowires of diameters ranging from 7 to 200 nm are prepared on a tungsten rod substrate by using the chemical vapour deposition (CVD) method with vapour-solid (VS) mechanism. Tin powders are used to control oxygen concentration in the furnace, thereby assisting the growth of the tungsten oxide nanowires. The grown tungsten oxide nanowires are determined to be of crystalline W18O49. Ⅰ-Ⅴ curves are measured by an in situ transmission electron microscope (TEM) to investigate the electrical properties of the nanowires. All of the Ⅰ-Ⅴ curves observed are symmetric, which reveals that the tungsten oxide nanowires are semiconducting. Quantitative analyses of the experimental I V curves by using a metal-semiconductor-metal (MSM) model give some intrinsic parameters of the tungsten oxide nanowires, such as the carrier concentration, the carrier mobility and the conductivity.

  1. Increasing the efficiency of polymer solar cells by silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F [Institute of Photonic Technology, Albert-Einstein-Strasse 9, 07743 Jena (Germany); Sensfuss, S, E-mail: bjoern.eisenhawer@ipht-jena.de [Thuringian Institute for Textile and Plastics Research, Breitscheidstrasse 97, 07407 Rudolstadt (Germany)

    2011-08-05

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  2. Increasing the efficiency of polymer solar cells by silicon nanowires

    International Nuclear Information System (INIS)

    Eisenhawer, B; Sivakov, V; Pietsch, M; Andrae, G; Falk, F; Sensfuss, S

    2011-01-01

    Silicon nanowires have been introduced into P3HT:[60]PCBM solar cells, resulting in hybrid organic/inorganic solar cells. A cell efficiency of 4.2% has been achieved, which is a relative improvement of 10% compared to a reference cell produced without nanowires. This increase in cell performance is possibly due to an enhancement of the electron transport properties imposed by the silicon nanowires. In this paper, we present a novel approach for introducing the nanowires by mixing them into the polymer blend and subsequently coating the polymer/nanowire blend onto a substrate. This new onset may represent a viable pathway to producing nanowire-enhanced polymer solar cells in a reel to reel process.

  3. Pd nanowire arrays as electrocatalysts for ethanol electrooxidation

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Hong; Cheng, Faliang [Dongguan University of Technology, Dongguan 523106 (China); Xu, Changwei; Jiang, Sanping [School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

    2007-05-15

    Highly ordered Pd nanowire arrays were prepared by template-electrodeposition method using anodic aluminum oxide template. The Pd nanowire arrays, in this paper, have high electrochemical active surface and show excellent catalytic properties for ethanol electrooxidation in alkaline media. The activity of Pd nanowire arrays for ethanol oxidation is not only higher that of Pd film, but also higher than that of commercial E-TEK PtRu(2:1 by weight)/C. The micrometer sized pores and channels in nanowire arrays act as structure units. They make liquid fuel diffuse into and products diffuse out of the catalysts layer much easier, therefore, the utilization efficiency of catalysts gets higher. Pd nanowire arrays are stable catalysts for ethanol oxidation. The nanowire arrays may be a great potential in direct ethanol fuel cells and ethanol sensors. (author)

  4. Electrochemical synthesis of CORE-shell magnetic nanowires

    KAUST Repository

    Ovejero, Jesús G.

    2015-04-16

    (Fe, Ni, CoFe) @ Au core-shell magnetic nanowires have been synthesized by optimized two-step potentiostatic electrodeposition inside self-assembled nanopores of anodic aluminium templates. The optimal electrochemical parameters (e.g., potential) have been firstly determined for the growth of continuous Au nanotubes at the inner wall of pores. Then, a magnetic core was synthesized inside the Au shells under suitable electrochemical conditions for a wide spectrum of single elements and alloy compositions (e.g., Fe, Ni and CoFe alloys). Novel opportunities offered by such nanowires are discussed particularly the magnetic behavior of (Fe, Ni, CoFe) @ Au core-shell nanowires was tested and compared with that of bare TM nanowires. These core-shell nanowires can be released from the template so, opening novel opportunities for biofunctionalization of individual nanowires.

  5. On the thermomechanical deformation of silver shape memory nanowires

    International Nuclear Information System (INIS)

    Park, Harold S.; Ji, Changjiang

    2006-01-01

    We present an analysis of the uniaxial thermomechanical deformation of single-crystal silver shape memory nanowires using atomistic simulations. We first demonstrate that silver nanowires can show both shape memory and pseudoelastic behavior, then perform uniaxial tensile loading of the shape memory nanowires at various deformation temperatures, strain rates and heat transfer conditions. The simulations show that the resulting mechanical response of the shape memory nanowires depends strongly upon the temperature during deformation, and can be fundamentally different from that observed in bulk polycrystalline shape memory alloys. The energy and temperature signatures of uniaxially loaded silver shape memory nanowires are correlated to the observed nanowire deformation, and are further discussed in comparison to bulk polycrystalline shape memory alloy behavior

  6. Synthetic Strategies and Applications of GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Guoquan Suo

    2014-01-01

    Full Text Available GaN is an important III-V semiconductor material with a direct band gap of 3.4 eV at 300 K. The wide direct band gap makes GaN an attractive material for various applications. GaN nanowires have demonstrated significant potential as fundamental building blocks for nanoelectronic and nanophotonic devices and also offer substantial promise for integrated nanosystems. In this paper, we provide a comprehensive review on the general synthetic strategies, characterizations, and applications of GaN nanowires. We first summarize several growth techniques of GaN nanowires. Subsequently, we discuss mechanisms involved to generate GaN nanowires from different synthetic schemes and conditions. Then we review some characterization methods of GaN nanowires. Finally, several kinds of main applications of GaN nanowires are discussed.

  7. Superconducting Nanowires as Nonlinear Inductive Elements for Qubits

    OpenAIRE

    Ku, Jaseung; Manucharyan, Vladimir; Bezryadin, Alexey

    2010-01-01

    We report microwave transmission measurements of superconducting Fabry-Perot resonators (SFPR), having a superconducting nanowire placed at a supercurrent antinode. As the plasma oscillation is excited, the supercurrent is forced to flow through the nanowire. The microwave transmission of the resonator-nanowire device shows a nonlinear resonance behavior, significantly dependent on the amplitude of the supercurrent oscillation. We show that such amplitude-dependent response is due to the nonl...

  8. Effect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics

    OpenAIRE

    Zahra Ostadmahmoodi Do; Tahereh Fanaei Sheikholeslami; Hassan Azarkish

    2016-01-01

    Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are prepared using wet chemical etching method which is commonly used as a simple and low cost method fo...

  9. Photoconductivity of Germanium Nanowire Arrays Incorporated in Anodic Aluminum Oxide

    International Nuclear Information System (INIS)

    Polyakov, B; Prikulis, J; Grigorjeva, L; Millers, D; Daly, B; Holmes, J D; Erts, D

    2007-01-01

    Photoconductivity of germanium nanowire arrays of 50 and 100 nm diameter incorporated into Anodic Aluminum Oxide (AAO) membranes illuminated with visible light is investigated. Photocurrent response to excitation radiation with time constants faster than 10 -4 s were governed by absorption of incident light by nanowires, while photokinetics with time constants of the order of 10 -3 s originates from the photoluminescence of the AAO matrix. Possible applications of nanowire arrays inside AAO as photoresistors are discussed

  10. Solar heating of GaAs nanowire solar cells.

    Science.gov (United States)

    Wu, Shao-Hua; Povinelli, Michelle L

    2015-11-30

    We use a coupled thermal-optical approach to model the operating temperature rise in GaAs nanowire solar cells. We find that despite more highly concentrated light absorption and lower thermal conductivity, the overall temperature rise in a nanowire structure is no higher than in a planar structure. Moreover, coating the nanowires with a transparent polymer can increase the radiative cooling power by 2.2 times, lowering the operating temperature by nearly 7 K.

  11. Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Pramana, Stevin Snellius

    2015-01-01

    Wet chemical etching, reflection high energy electron diffraction, scanning electron microscope and convergent beam electron diffraction have been employed to study the polarities of AlN and the subsequently grown GaN as a function of metal flux in the metal rich growth regime. Both AlN and GaN exhibited metal polarity in the intermediate growth conditions. However, in the droplet growth regime, the polarity of AlN and GaN were N polar and Ga polar, respectively. It was observed that Ga polar GaN could be obtained on both Al and N polar AlN. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure exhibiting hall mobility of 900 cm 2 V -1 s -1 and sheet carrier density of 1.2 × 10 13 cm -2 was demonstrated using N polar AlN which confirmed Ga polarity of GaN. Al metal flux was likely to play an important role in controlling the polarity of AlN and determining the polarity of the subsequent GaN grown on Si(111) by plasma assisted molecular beam epitaxy (PA-MBE). (author)

  12. Designing and building nanowires: directed nanocrystal self-assembly into radically branched and zigzag PbS nanowires

    International Nuclear Information System (INIS)

    Xu Fan; Ma Xin; Gerlein, L Felipe; Cloutier, Sylvain G

    2011-01-01

    Lead sulfide nanowires with controllable optoelectronic properties would be promising building blocks for various applications. Here, we report the hot colloidal synthesis of radically branched and zigzag nanowires through self-attachment of star-shaped and octahedral nanocrystals in the presence of multiple surfactants. We obtained high-quality single-crystal nanowires with uniform diameter along the entire length, and the size of the nanowire can be tuned by tailoring the reaction parameters. This slow oriented attachment provides a better understanding of the intricacies of this complex nanocrystal assembly process. Meanwhile, these self-assembled nanowire structures have appealing lateral conformations with narrow side arms or highly faceted edges, where strong quantum confinement can occur. Consequently, the single-crystal nanowire structures exhibit strong photoluminescence in the near-infrared region with a large blue-shift compared to the bulk material.

  13. Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

    Energy Technology Data Exchange (ETDEWEB)

    Hainey, Mel F.; Redwing, Joan M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-12-15

    Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis on methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.

  14. Novel Flame-Based Synthesis of Nanowires for Multifunctional Application

    Science.gov (United States)

    2015-05-13

    pattern (SAED) of SnO2/WO2.9 heterojunction for case 7. TEM (Fig. 14(a)) reveals that the coating on the tungsten- oxide nanowires is actually a...tungsten oxide nanowire,s resulting in radial growth of Zn2SnO4 nanocube/WO2.9 nanowire heterojunction . Furthermore, the combined flame and solution...SECURITY CLASSIFICATION OF: Progress for the project has been made in various areas. Specifically, we report on: (i) flame synthesis of metal- oxide

  15. Synthesis and Growth Mechanism of Ni Nanotubes and Nanowires

    Directory of Open Access Journals (Sweden)

    Wang Yiqian

    2009-01-01

    Full Text Available Abstract Highly ordered Ni nanotube and nanowire arrays were fabricated via electrodeposition. The Ni microstructures and the process of the formation were investigated using conventional and high-resolution transmission electron microscope. Herein, we demonstrated the systematic fabrication of Ni nanotube and nanowire arrays and proposed an original growth mechanism. With the different deposition time, nanotubes or nanowires can be obtained. Tubular nanostructures can be obtained at short time, while nanowires take longer time to form. This formation mechanism is applicable to design and synthesize other metal nanostructures and even compound nanostuctures via template-based electrodeposition.

  16. Position-controlled epitaxial III-V nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M [Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven (Netherlands); Kavli Institute of NanoScience, Delft University of Technology, PO Box 5046, 2600 GA Delft (Netherlands)

    2006-06-14

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires.

  17. Position-controlled epitaxial III-V nanowires on silicon

    International Nuclear Information System (INIS)

    Roest, Aarnoud L; Verheijen, Marcel A; Wunnicke, Olaf; Serafin, Stacey; Wondergem, Harry; Bakkers, Erik P A M

    2006-01-01

    We show the epitaxial integration of III-V semiconductor nanowires with silicon technology. The wires are grown by the VLS mechanism with laser ablation as well as metal-organic vapour phase epitaxy. The hetero-epitaxial growth of the III-V nanowires on silicon was confirmed with x-ray diffraction pole figures and cross-sectional transmission electron microscopy. We show preliminary results of two-terminal electrical measurements of III-V nanowires grown on silicon. E-beam lithography was used to predefine the position of the nanowires

  18. Au nanowire junction breakup through surface atom diffusion

    Science.gov (United States)

    Vigonski, Simon; Jansson, Ville; Vlassov, Sergei; Polyakov, Boris; Baibuz, Ekaterina; Oras, Sven; Aabloo, Alvo; Djurabekova, Flyura; Zadin, Vahur

    2018-01-01

    Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

  19. Permanent bending and alignment of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

    2011-07-01

    Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

  20. Quantum-confined nanowires as vehicles for enhanced electrical transport

    International Nuclear Information System (INIS)

    Mohammad, S Noor

    2012-01-01

    Electrical transport in semiconductor nanowires taking quantum confinement and dielectric confinement into account has been studied. A distinctly new route has been employed for the study. The fundamental science underlying the model is based on a relationship between the quantum confinement and the structural disorder of the nanowire surface. The role of surface energy and thermodynamic imbalance in nanowire structural disorder has been described. A model for the diameter dependence of energy bandgap of nanowires has been developed. Ionized impurity scattering, dislocation scattering and acoustic phonon scattering have been taken into account to study carrier mobility. A series of calculations on silicon nanowires show that carrier mobility in nanowires can be greatly enhanced by quantum confinement and dielectric confinement. The electron mobility can, for example, be a factor of 2–10 higher at room temperature than the mobility in a free-standing silicon nanowire. The calculated results agree well with almost all experimental and theoretical results available in the literature. They successfully explain experimental observations not understood before. The model is general and applicable to nanowires from all possible semiconductors. It is perhaps the first physical model highlighting the impact of both quantum confinement and dielectric confinement on carrier transport. It underscores the basic causes of thin, lowly doped nanowires in the temperature range 200 K ≤ T ≤ 500 K yielding very high carrier mobility. It suggests that the scattering by dislocations (stacking faults) can be very detrimental for carrier mobility. (paper)

  1. Disorder-induced enhancement of conductance in doped nanowires

    Institute of Scientific and Technical Information of China (English)

    Xu Ning; Wang Bao-Lin; Sun Hou-Qian; Kong Fan-Jie

    2010-01-01

    A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires.The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

  2. Flexible integration of free-standing nanowires into silicon photonics.

    Science.gov (United States)

    Chen, Bigeng; Wu, Hao; Xin, Chenguang; Dai, Daoxin; Tong, Limin

    2017-06-14

    Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires-silicon waveguides Mach-Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires-silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.Precisely assembling free-standing nanowires for on-demand photonic functionality remains a challenge. Here, Chen et al. integrate free-standing nanowires into silicon waveguides and show all-optical modulation and light generation on silicon photonic chips.

  3. Carrier gas effects on aluminum-catalyzed nanowire growth

    International Nuclear Information System (INIS)

    Ke, Yue; Hainey, Mel Jr; Won, Dongjin; Weng, Xiaojun; Eichfeld, Sarah M; Redwing, Joan M

    2016-01-01

    Aluminum-catalyzed silicon nanowire growth under low-pressure chemical vapor deposition conditions requires higher reactor pressures than gold-catalyzed growth, but the reasons for this difference are not well understood. In this study, the effects of reactor pressure and hydrogen partial pressure on silicon nanowire growth using an aluminum catalyst were studied by growing nanowires in hydrogen and hydrogen/nitrogen carrier gas mixtures at different total reactor pressures. Nanowires grown in the nitrogen/hydrogen mixture have faceted catalyst droplet tips, minimal evidence of aluminum diffusion from the tip down the nanowire sidewalls, and significant vapor–solid deposition of silicon on the sidewalls. In comparison, wires grown in pure hydrogen show less well-defined tips, evidence of aluminum diffusion down the nanowire sidewalls at increasing reactor pressures and reduced vapor–solid deposition of silicon on the sidewalls. The results are explained in terms of a model wherein the hydrogen partial pressure plays a critical role in aluminum-catalyzed nanowire growth by controlling hydrogen termination of the silicon nanowire sidewalls. For a given reactor pressure, increased hydrogen partial pressures increase the extent of hydrogen termination of the sidewalls which suppresses SiH_4 adsorption thereby reducing vapor–solid deposition of silicon but increases the surface diffusion length of aluminum. Conversely, lower hydrogen partial pressures reduce the hydrogen termination and also increase the extent of SiH_4 gas phase decomposition, shifting the nanowire growth window to lower growth temperatures and silane partial pressures. (paper)

  4. Smooth germanium nanowires prepared by a hydrothermal deposition process

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhang, Qian-Feng, E-mail: zhangqf@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Laboratory of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-11-15

    Smooth germanium nanowires were prepared using Ge and GeO{sub 2} as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

  5. Smooth germanium nanowires prepared by a hydrothermal deposition process

    International Nuclear Information System (INIS)

    Pei, L.Z.; Zhao, H.S.; Tan, W.; Yu, H.Y.; Chen, Y.W.; Fan, C.G.; Zhang, Qian-Feng

    2009-01-01

    Smooth germanium nanowires were prepared using Ge and GeO 2 as the starting materials and Cu sheet as the substrate by a simple hydrothermal deposition process. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) characterizations show that the germanium nanowires are smooth and straight with uniform diameter of about 150 nm in average and tens of micrometers in length. X-ray diffraction (XRD) and Raman spectrum of the germanium nanowires display that the germanium nanowires are mainly composed of cubic diamond phase. PL spectrum shows a strong blue light emission at 441 nm. The growth mechanism is also discussed.

  6. A shortcut hydrothermal strategy for the synthesis of zinc nanowires

    International Nuclear Information System (INIS)

    Hu Jianqiang; Chen Zhiwu; Xie Jingsi; Yu Ying

    2008-01-01

    Synthesis of metal nanowires has opened many new possibilities for designing ideal building blocks for future nanodevices. In this work, zinc nanowires with lengths of micrometre magnitude were synthesized in high yield by a shortcut hydrothermal strategy. The synthesis involves a template-free, non-seed and catalyst-free solution-phase process to high-quality zinc nanowires, which is low-cost and proceeds at relatively short time. In this process, zinc nanowires were prepared through the reduction of zinc acetate with absolute ethanol in the presence of silver nitrate under hydrothermal atmosphere. The strategy suggests that silver ion plays a vital role in the synthesis of zinc nanowires, without which the substituted product is zinc oxide nanowires. X-ray diffraction and energy-dispersive x-ray spectroscopy measurements confirm the final formation of zinc nanowires and component transformation from zinc oxide nanowires in the introduction of silver ion. We believe that with the efficient synthesis, longer zinc nanowires can be fabricated and may find potential applications for superconductors and nanodevices. (fast track communication)

  7. THE USE OF ULTRA-LONG-ACTING INSULIN ANALOGUE DEGLUDEC IN TYPE 1 DIABETES MELLITUS IN CLINICAL PRACTICE: THE INFLUENCE ON QUALITY OF LIFE AND SATISFACTION WITH TREATMENT

    Directory of Open Access Journals (Sweden)

    M. F. Kalashnikova

    2016-01-01

    Full Text Available Background: Maintenance of stable glycemic control is an important prerequisite of effective treatment of patients with type 1 diabetes mellitus (DM. The ultra-long-acting basal insulin degludec allows for reduction of glycemic variability and for a substantial reduction in the rates of hypoglycemia with equivalent glycemic control. Evaluation of the impact of this novel insulin on diabetes-dependent quality of life and patient satisfactions with the treatment is necessary for comprehensive assessment of treatment efficacy.Aim: To study changes of glycated hemoglobin (HbA1c, rates of hypoglycemia, diabetes-dependent quality of life and treatment satisfaction in patients with type 1 DM, who have been switched to insulin degludec.Materials and methods: This open 12-week observational comparative study included 25  patients with type  1 DM (median age, 36 [20; 63] years, who were switched to insulin degludec in combination with a  ultra-short insulin analogue. The control group included 21 patients with type 1 DM (median age, 40 [23; 63] years, who continued their treatment with a long-acting insulin analogue glargine. At baseline and at week 12 after switching to insulin degludec, we assessed HbA1c level, mean insulin dose, depression score, diabetes-dependent quality of life and patient satisfaction with the treatment with the use of the Russian versions of the diabetes-specific questionnaires “Audit of Diabetes-Dependent Quality of life” (RuADDQoL, and “Diabetes Treatment Satisfaction Questionnaire” (DTSQ, respectively.Results: At 3 months, there was a significant reduction of the HbA1c levels in the main and the control groups to 7.57% (Ме 7.5 [7.1; 8.4]; р=0.03 and 8.18% (Ме 7.8% [7.4; 8.7]; р=0.04, respectively. The mean reduction of this parameter under treatment with degludec was slightly higher than under treatment with glargine (0.73 vs 0.57%, respectively, at 3 months the difference being statistically

  8. Functionalised zinc oxide nanowire gas sensors: Enhanced NO(2) gas sensor response by chemical modification of nanowire surfaces.

    Science.gov (United States)

    Waclawik, Eric R; Chang, Jin; Ponzoni, Andrea; Concina, Isabella; Zappa, Dario; Comini, Elisabetta; Motta, Nunzio; Faglia, Guido; Sberveglieri, Giorgio

    2012-01-01

    Surface coating with an organic self-assembled monolayer (SAM) can enhance surface reactions or the absorption of specific gases and hence improve the response of a metal oxide (MOx) sensor toward particular target gases in the environment. In this study the effect of an adsorbed organic layer on the dynamic response of zinc oxide nanowire gas sensors was investigated. The effect of ZnO surface functionalisation by two different organic molecules, tris(hydroxymethyl)aminomethane (THMA) and dodecanethiol (DT), was studied. The response towards ammonia, nitrous oxide and nitrogen dioxide was investigated for three sensor configurations, namely pure ZnO nanowires, organic-coated ZnO nanowires and ZnO nanowires covered with a sparse layer of organic-coated ZnO nanoparticles. Exposure of the nanowire sensors to the oxidising gas NO(2) produced a significant and reproducible response. ZnO and THMA-coated ZnO nanowire sensors both readily detected NO(2) down to a concentration in the very low ppm range. Notably, the THMA-coated nanowires consistently displayed a small, enhanced response to NO(2) compared to uncoated ZnO nanowire sensors. At the lower concentration levels tested, ZnO nanowire sensors that were coated with THMA-capped ZnO nanoparticles were found to exhibit the greatest enhanced response. ΔR/R was two times greater than that for the as-prepared ZnO nanowire sensors. It is proposed that the ΔR/R enhancement in this case originates from the changes induced in the depletion-layer width of the ZnO nanoparticles that bridge ZnO nanowires resulting from THMA ligand binding to the surface of the particle coating. The heightened response and selectivity to the NO(2) target are positive results arising from the coating of these ZnO nanowire sensors with organic-SAM-functionalised ZnO nanoparticles.

  9. Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs

    Directory of Open Access Journals (Sweden)

    Weihuang Yang

    2013-05-01

    Full Text Available Dense and atomically flat AlN film with root-mean-square roughness value of 0.32 nm was grown on sapphire substrate at a relatively lower temperature by using a three-step epitaxy technique. On the basis of this AlN template, AlGaN-based multiple quantum wells (MQWs with atomically flat hetero-interfaces were epitaxially grown to suppress nonradiative recombination by introducing In as a surfactant during simultaneous source supply. As a result, single intense- and narrow-peaked photoluminescence was obtained from the MQWs. Finally, the deep ultraviolet light emitting diodes with well-behaved I-V characteristic and strong electroluminescence in the range of 256–312 nm were fabricated successfully.

  10. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

    International Nuclear Information System (INIS)

    Mizerov, A. M.; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu.

    2015-01-01

    The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T s ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T s ≈ 750°C and growth conditions providing enrichment with metal is shown

  11. Control over the morphology of AlN during molecular beam epitaxy with the plasma activation of nitrogen on Si (111) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Mizerov, A. M., E-mail: mizerov@beam.ioffe.ru; Kladko, P. N.; Nikitina, E. V.; Egorov, A. Yu. [Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Centre (Russian Federation)

    2015-02-15

    The results of studies of the growth kinetics of AlN layers during molecular beam epitaxy with the plasma activation of nitrogen using Si (111) substrates are presented. The possibility of the growth of individual AlN/Si (111) nanocolumns using growth conditions with enrichment of the surface with metal near the formation mode of Al drops, at a substrate temperature close to maximal, during molecular beam epitaxy with the plasma activation of nitrogen (T{sub s} ≈ 850°C) is shown. The possibility of growing smooth AlN layers on a nanocolumnar AlN/Si (111) buffer with the use of T{sub s} ≈ 750°C and growth conditions providing enrichment with metal is shown.

  12. Processing simulated high-level liquid waste by heat treatment with addition of TiN and AlN or Al2O3

    International Nuclear Information System (INIS)

    Uno, Masayoshi; Kinoshita, Hajime; Sakai, Etsuro; Ikeda, Akira; Matsumoto, Y.; Yamanaka, Shinsuke

    1999-01-01

    The present study aims to decrease the melting temperature of the oxide phase by the addition of the mixture of TiN and AlN or Al 2 O 3 for reduction of the treatment temperature of super high temperature method. The addition of the mixture of TiN and AlN or Al 2 O 3 with the atomic ratio of Al to Ti of 1:9 caused the melting of both the alloy phase and oxide phase at 1673 K. The measured values of density and hardness for thus obtained oxide phase were same as those for the oxide phase obtained at 1873 K without Al. Thus, above mentioned method is achieved at 1673 K without degradation of the properties of the oxide phase as an waste. (author)

  13. Stoichiometric control for heteroepitaxial growth of smooth ɛ-Ga2O3 thin films on c-plane AlN templates by mist chemical vapor deposition

    Science.gov (United States)

    Tahara, Daisuke; Nishinaka, Hiroyuki; Morimoto, Shota; Yoshimoto, Masahiro

    2017-07-01

    Epitaxial ɛ-Ga2O3 thin films with smooth surfaces were successfully grown on c-plane AlN templates by mist chemical vapor deposition. Using X-ray diffraction 2θ-ω and φ scans, the out-of-plane and in-plane epitaxial relationship was determined to be (0001) ɛ-Ga2O3 [10\\bar{1}0] ∥ (0001)AlN[10\\bar{1}0]. The gallium/oxygen ratio was controlled by varying the gallium precursor concentration in the solution. While scanning electron microscopy showed the presence of large grains on the surfaces of the films formed for low concentrations of oxygen species, no large grains were observed under stoichiometric conditions. Cathodoluminescence measurements showed a deep-level emission ranging from 1.55-3.7 eV; however, no band-edge emission was observed.

  14. Electrical transport in GaN and InN nanowires; Elektrischer Transport in GaN- und InN-Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Richter, Thomas Fabian

    2008-12-19

    This thesis discusses the analysis of the electrical transport in GaN and InN nanowires at room temperature and deep temperatures. From those measurements two different transport models for those two in matter of the band banding completely different materials have been found. In the investigation of the GaN nanowires the main focus was the electrical transport in dependence of the diameter and the n-doping. With the use of IV-measurements on those MBE grown nanowires with different diameters at dark and under UV illumination as well as the decay of the persistent photocurrent, it was possible to find an for GaN untypical behaviour. The electrical transport in those wires is extremely diameter dependent. The dark current shows space charged limited current. With the help of those cognitions a diameter dependent transport model could be found. The transport phenomena in those wires is based on the diameter depending band bending at the edge of the wires caused by the Fermi level pinning inside the forbidden band. This model can be fit to the data with the three parameter doping, fermi level pinning and wire diameter. On the base of those effects a method to determine the doping concentration inside those wires without field effect measurements and contact resistance has been developed. The defect structure inside those wires has been analysed with the help of spectral photoluminescence measurements. Here several defect bands have been found and it was possible with help of several contacts on one single wire to determine different defect regions along the wire and to explain them by the lattice mismatch between nanowire and substrate. Further temperature depending measurements and investigations on Schottky contacted wires as well as on GaN wires with AlN tunnel structures complete the work on GaN. The electrical characterisation on a large scale of undoped and doped InN nanowires shows linear growth of the dark current with the diameter up to wires of around 100 nm

  15. Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

    Science.gov (United States)

    Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

    2017-02-01

    Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

  16. Structure and lattice dynamics of GaN and AlN. Ab-initio investigations of strained polytypes and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, Jan-Martin

    2004-10-14

    In this dissertation, ab-initio investigations of the strain influence on vibrational properties of GaN and AlN as well as of short-period GaN/AlN superlattices are presented. Based on densityfunctional theory and density-functional perturbation theory, for differently strained structures complete phonon spectra and related properties are calculated using the local-density approximation and norm-conserving pseudopotentials. (orig.)

  17. Effect of Solution Treatment on Precipitation Behaviors, Age Hardening Response and Creep Properties of Elektron21 Alloy Reinforced by AlN Nanoparticles.

    Science.gov (United States)

    Saboori, Abdollah; Padovano, Elisa; Pavese, Matteo; Dieringa, Hajo; Badini, Claudio

    2017-12-02

    In the present study, the solution and ageing treatments behavior of Mg-RE-Zr-Zn alloy (Elektron21) and its nano-AlN reinforced nanocomposites have been evaluated. The properties of the thermal-treated materials were investigated in terms of Vickers hardness, the area fraction of precipitates, microstructure and phase composition. The solution treatments were performed by treating at 520 °C, 550 °C and 580 °C in argon atmosphere. The outcomes show that the hardness of the solutionized alloys was slightly affected by the solution temperature. X-ray diffraction and image analysis revealed that the complete dissolution of precipitates was not possible, neither for Elektron21 (El21) nor for its AlN containing nanocomposites. The ageing treatment of El21 led to a significant improvement in hardness after 20 h, while for longer times, it progressively decreased. The effect of ageing on the hardness of El21-AlN composites was found to be much less than this effect on the hardness of the host alloy. Electron backscatter diffraction (EBSD) analysis of El21 and El21-1%AlN after solution treatment confirm the random orientation of grains with a typical texture of random distribution. The as-cast creep results showed that the incorporation of nanoparticles could effectively improve the creep properties, while the results after solution treatment at 520 °C for 12 h followed by ageing treatment at 200 °C for 20 h confirmed that the minimum creep rate of T6-El21 was almost equal to the as-cast El21-AlN.

  18. Electrical and Optical Characterization of Nanowire based Semiconductor Devices

    Science.gov (United States)

    Ayvazian, Talin

    This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand and optimize the electrical and optical properties of two types of nanoscale devices; in first type lithographically patterned nanowire electrodeposition (LPNE) method has been utilized to fabricate nanowire field effect transistors (NWFET) and second type involved the development of light emitting semiconductor nanowire arrays (NWLED). Field effect transistors (NWFETs) have been prepared from arrays of polycrystalline cadmium selenide (pc-CdSe) nanowires using a back gate configuration. pc-CdSe nanowires were fabricated using the lithographically patterned nanowire electrode- position (LPNE) process on SiO2 /Si substrates. After electrodeposition, pc-CdSe nanowires were thermally annealed at 300 °C x 4 h either with or without exposure to CdCl 2 in methanol a grain growth promoter. The influence of CdCl2 treatment was to increase the mean grain diameter as determined by X-ray diffraction pattern and to convert the crystal structure from cubic to wurtzite. Transfer characteristics showed an increase of the field effect mobility (mu eff) by an order of magnitude and increase of the Ion/I off ratio by a factor of 3-4. Light emitting devices (NW-LED) based on lithographically patterned pc-CdSe nanowire arrays have been investigated. Electroluminescence (EL) spectra of CdSe nanowires under various biases exhibited broad emission spectra centered at 750 nm close to the band gap of CdSe (1.7eV). To enhance the intensity of the emitted light and the external quantum efficiency (EQE), the distance between the contacts were reduced from 5 mum to less than 1 mum which increased the efficiency by an order of magnitude. Also, increasing the annealing temperature of nanowires from 300 °C x4 h to 450 This research project is focused on a new strategy for the creation of nanowire based semiconductor devices. The main goal is to understand

  19. Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa δ-doping (AlN)5/(GaN)1: the strain effect

    Science.gov (United States)

    Jiang, Xin-He; Shi, Jun-Jie; Zhang, Min; Zhong, Hong-Xia; Huang, Pu; Ding, Yi-Min; He, Ying-Ping; Cao, Xiong

    2015-12-01

    To resolve the p-type doping problem of Al-rich AlGaN alloys, we investigate the influence of biaxial and hydrostatic strains on the activation energy, formation energy and band gap of Mg-doped GaN, AlN, Al0.83Ga0.17N disorder alloy and (AlN)5/(GaN)1 superlattice based on first-principles calculations by combining the standard DFT and hybrid functional. We find that the Mg acceptor activation energy {{E}\\text{A}} , the formation energy {{E}\\text{f}} and the band gap {{E}\\text{g}} decrease with increasing the strain ɛ. The hydrostatic strain has a more remarkable impact on {{E}\\text{g}} and {{E}\\text{A}} than the biaxial strain. Both {{E}\\text{A}} and {{E}\\text{g}} have a linear dependence on the hydrostatic strain. For the biaxial strain, {{E}\\text{g}} shows a parabolic dependence on ɛ if \\varepsilon ≤slant 0 while it becomes linear if \\varepsilon ≥slant 0 . In GaN and (AlN)5/(GaN)1, {{E}\\text{A}} parabolically depends on the biaxial compressive strain and linearly depends on the biaxial tensible strain. However, the dependence is approximately linear over the whole biaxial strain range in AlN and Al0.83Ga0.17N. The Mg acceptor activation energy in (AlN)5/(GaN)1 can be reduced from 0.26 eV without strain to 0.16 (0.22) eV with the hydrostatic (biaxial) tensible strain 3%.

  20. Influence of substrate biasing on the growth of c-axis oriented AlN thin films by RF reactive sputtering in pure nitrogen

    Energy Technology Data Exchange (ETDEWEB)

    Monteagudo-Lerma, L.; Naranjo, F.B.; Gonzalez-Herraez, M. [Departamento de Electronica, Escuela Politecnica, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares (Spain); Fernandez, S. [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2012-03-15

    We report on the investigation of the influence of deposition conditions on structural, morphological and optical properties of AlN thin films deposited on sapphire (Al{sub 2}O{sub 3}) substrates by radio-frequency (RF) reactive sputtering. The deposition parameters studied are RF power, substrate temperature and substrate bias, while using pure nitrogen as reactive gas. The effect of such deposition parameters on AlN film properties are analyzed by different characterization methods as high resolution X-ray diffraction (HRXRD), field emission scanning electron microscopy (FESEM) and linear optical transmission. AlN thin films with a full-width at half-maximum (FWHM) of the rocking curve obtained for the (0002) diffraction peak of 1.2 are achieved under optimized conditions. The time resolved evolution of the self and externally-induced biasing of the substrate during deposition process is monitored and analyzed in terms of the rate of atomic species incorporation into the layer. The bias-induced change of the atomic incorporation leads to an enhancement in the structural quality of the layer and an increase of the deposition rate. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)