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Sample records for ultra narrow silicon

  1. Rare-earth-ion-doped ultra-narrow-linewidth lasers on a silicon chip and applications to intra-laser-cavity optical sensing

    NARCIS (Netherlands)

    Bernhardi, Edward; de Ridder, R.M.; Worhoff, Kerstin; Pollnau, Markus

    We report on diode-pumped distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) channel waveguide lasers in Er-doped and Yb-doped Al2O3 on standard thermally oxidized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into

  2. Analysis of ultra-narrow ferromagnetic domain walls

    Energy Technology Data Exchange (ETDEWEB)

    Jenkins, Catherine; Paul, David

    2012-01-10

    New materials with high magnetic anisotropy will have domains separated by ultra-narrow ferromagnetic walls with widths on the order of a few unit cells, approaching the limit where the elastic continuum approximation often used in micromagnetic simulations is accurate. The limits of this approximation are explored, and the static and dynamic interactions with intrinsic crystalline defects and external driving elds are modeled. The results developed here will be important when considering the stability of ultra-high-density storage media.

  3. Ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H. F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Petersen, B.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N.; Marchetto, F. [INFN Torino, Torino (Italy); Bruzzi, M.; Mori, R.; Scaringella, M.; Vinattieri, A. [University of Florence, Department of Physics and Astronomy, Sesto Fiorentino, Firenze (Italy)

    2013-12-01

    We propose to develop a fast, thin silicon sensor with gain capable to concurrently measure with high precision the space (∼10 μm) and time (∼10 ps) coordinates of a particle. This will open up new application of silicon detector systems in many fields. Our analysis of detector properties indicates that it is possible to improve the timing characteristics of silicon-based tracking sensors, which already have sufficient position resolution, to achieve four-dimensional high-precision measurements. The basic sensor characteristics and the expected performance are listed, the wide field of applications are mentioned and the required R and D topics are discussed. -- Highlights: •We are proposing thin pixel silicon sensors with 10's of picoseconds time resolution. •Fast charge collection is coupled with internal charge multiplication. •The truly 4-D sensors will revolutionize imaging and particle counting in many applications.

  4. Sensors for ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Sadrozinski, H.F.-W., E-mail: hartmut@scipp.ucsc.edu [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A. [Santa Cruz Institute for Particle Physics, UC Santa Cruz, Santa Cruz, CA 95064 (United States); Cartiglia, N. [INFN Torino, Torino (Italy); Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D. [Centro Nacional de Microelectrónica, IMB-CNM-CSIC, Barcelona (Spain)

    2014-11-21

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain.

  5. Sensors for ultra-fast silicon detectors

    International Nuclear Information System (INIS)

    Sadrozinski, H.F.-W.; Baselga, M.; Ely, S.; Fadeyev, V.; Galloway, Z.; Ngo, J.; Parker, C.; Schumacher, D.; Seiden, A.; Zatserklyaniy, A.; Cartiglia, N.; Pellegrini, G.; Fernández-Martínez, P.; Greco, V.; Hidalgo, S.; Quirion, D.

    2014-01-01

    We report on electrical and charge collection tests of silicon sensors with internal gain as part of our development of ultra-fast silicon detectors. Using C–V and α TCT measurements, we investigate the non-uniform doping profile of so-called low-gain avalanche detectors (LGAD). These are n-on-p pad sensors with charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction, obtained with a highly doped implant. We compare the bias dependence of the pulse shapes of traditional sensors and of LGAD sensors with different dopant density of the diffusion layer, and extract the internal gain

  6. Ultra-high-speed Optical Signal Processing using Silicon Photonics

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

    with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

  7. Ultra-short silicon MMI duplexer

    Science.gov (United States)

    Yi, Huaxiang; Huang, Yawen; Wang, Xingjun; Zhou, Zhiping

    2012-11-01

    The fiber-to-the-home (FTTH) systems are growing fast these days, where two different wavelengths are used for upstream and downstream traffic, typically 1310nm and 1490nm. The duplexers are the key elements to separate these wavelengths into different path in central offices (CO) and optical network unit (ONU) in passive optical network (PON). Multimode interference (MMI) has some benefits to be a duplexer including large fabrication tolerance, low-temperature dependence, and low-polarization dependence, but its size is too large to integrate in conventional case. Based on the silicon photonics platform, ultra-short silicon MMI duplexer was demonstrated to separate the 1310nm and 1490nm lights. By studying the theory of self-image phenomena in MMI, the first order images are adopted in order to keep the device short. A cascaded MMI structure was investigated to implement the wavelength splitting, where both the light of 1310nm and 1490nm was input from the same port, and the 1490nm light was coupling cross the first MMI and output at the cross-port in the device while the 1310nm light was coupling through the first and second MMI and output at the bar-port in the device. The experiment was carried on with the SOI wafer of 340nm top silicon. The cascaded MMI was investigated to fold the length of the duplexer as short as 117μm with the extinct ratio over 10dB.

  8. Ultra narrow bore thick film capillaries for microcolumn separations. Part 1. GC experiments

    NARCIS (Netherlands)

    Steenackers, D.; Sandra, P.J.F.; Sandra, P.; Devos, G.

    1993-01-01

    Ultra narrow bore (50 mum 1.0.) fused silica columns were statically coated with apolar stationary phases to obtain beta values ranging from 6.25 to 50 (filmthickness 2 to 0.25 mum). Performance of the 1 and 2 mum columns in Capillary Gas Chromatography (CGC) is highlighted.

  9. Controllable ultra-narrow fluorescence and six-wave mixing under double electromagnetically induced transparency

    International Nuclear Information System (INIS)

    Wang, Z G; Zhang, Z Y; Che, J L; Zhang, Y Z; Li, C B; Zheng, H B; Zhang, Y P

    2013-01-01

    We report the first observation of six-wave mixing (SWM) and fluorescence signals in an electromagnetically induced transparency (EIT) window. Several remarkable advantages are described. First, multiple bright and dark states are simultaneously observed due to enhancement or suppression of the SWM signal. Second, ultra-narrow fluorescence, much narrower than the EIT window, is experimentally obtained. Third, the ultra-narrow fluorescence can also generate Autler–Townes splitting on scanning the coupling beam. Fourth, a double-peak EIT window is obtained using the nest-dressing scheme. Such studies concerning SWM and fluorescence have applications in optical switching, multi-channel communication and narrowband and long-range quantum communication. (letter)

  10. Theoretical study on the ultra-narrow bandwidth tunable atomic filter with electromagnetically induced transparency

    Science.gov (United States)

    Liu, Yang; Li, Shu-qing; Feng, Zhong-ying; Liu, Xiao-fei; Gao, Jin-yue

    2016-12-01

    To obtain the weak signal light detection from the high background noise, we present a theoretical study on the ultra-narrow bandwidth tunable atomic filter with electromagnetically induced transparency. In a three-level Λ -type atomic system in the rubidium D1 line, the bandwidth of the EIT atomic filter is narrowed to ~6.5 \\text{MHz} . And the single peak transmission of the filter can be up to 86% . Moreover, the transmission wavelength can be tuned by changing the coupling light frequency. This theoretical scheme can also be applied to other alkali atomic systems.

  11. Impedance self-matching ultra-narrow linewidth fiber resonator by use of a tunable π-phase-shifted FBG.

    Science.gov (United States)

    Jing, Mingyong; Yu, Bo; Hu, Jianyong; Hou, Huifang; Zhang, Guofeng; Xiao, Liantuan; Jia, Suotang

    2017-05-15

    In this paper, we present a novel ultra-narrow linewidth fiber resonator formed by a tunable polarization maintaining (PM) π-phase-shifted fiber Bragg grating and a PM uniform fiber Bragg grating with a certain length of PM single mode fiber patch cable between them. Theoretical prediction shows that this resonator has ultra-narrow linewidth resonant peaks and is easy to realize impedance matching. We experimentally obtain 3 MHz narrow linewidth impedance matched resonant peak in a 7.3 m ultra-long passive fiber cavity. The impedance self-matching characteristic of this resonator also makes itself particularly suitable for use in ultra-sensitive sensors, ultra-narrow band rejection optical filters and fiber lasers applications.

  12. Ultra-narrow EIA spectra of 85Rb atom in a degenerate Zeeman multiplet system

    Science.gov (United States)

    Rehman, Hafeez Ur; Qureshi, Muhammad Mohsin; Noh, Heung-Ryoul; Kim, Jin-Tae

    2015-05-01

    Ultra-narrow EIA spectral features of thermal 85Rb atom with respect to coupling Rabi frequencies in a degenerate Zeeman multiplet system have been unraveled in the cases of same (σ+ -σ+ , π ∥ π) and orthogonal (σ+ -σ- , π ⊥ π)polarization configurations. The EIA signals with subnatural linewidth of ~ 100 kHz even in the cases of same circular and linear polarizations of coupling and probe laser have been obtained for the first time theoretically and experimentally. In weak coupling power limit of orthogonal polarization configurations, time-dependent transfer of coherence plays major role in the splitting of the EIA spectra while in strong coupling power, Mollow triplet-like mechanism due to strong power bring into broad split feature. The experimental ultra-narrow EIA features using one laser combined with an AOM match well with simulated spectra obtained by using generalized time-dependent optical Bloch equations.

  13. Narrow-linewidth lasers on a silicon chip

    NARCIS (Netherlands)

    Bernhardi, Edward; Pollnau, Markus; Di Bartolo, Baldassare; Collins, John; Silvestri, Luciano

    2015-01-01

    Diode-pumped distributed-feedback (DFB) channel waveguide lasers were demonstrated in Er3+-doped and Yb3+-doped Al2O3 on standard thermally ox-idized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into the SiO2 top cladding. The

  14. Oxidation of ultra low carbon and silicon bearing steels

    Energy Technology Data Exchange (ETDEWEB)

    Suarez, Lucia [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: lucia.suarez@ctm.com.es; Rodriguez-Calvillo, Pablo [CTM - Technologic Centre, Materials Technology Area, Manresa, Barcelona (Spain)], E-mail: pablo.rodriguez@ctm.com.es; Houbaert, Yvan [Department of Materials Science and Engineering, University of Ghent (Belgium)], E-mail: Yvan.Houbaert@UGent.be; Colas, Rafael [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico)], E-mail: rcolas@mail.uanl.mx

    2010-06-15

    Oxidation tests were carried out in samples from an ultra low carbon and two silicon bearing steels to determine the distribution and morphology of the oxide species present. The ultra low carbon steel was oxidized for short periods of time within a chamber designed to obtain thin oxide layers by controlling the atmosphere, and for longer times in an electric furnace; the silicon steels were reheated only in the electric furnace. The chamber was constructed to study the behaviour encountered during the short period of time between descaling and rolling in modern continuous mills. It was found that the oxide layers formed on the samples reheated in the electric furnace were made of different oxide species. The specimens treated in the chamber had layers made almost exclusively of wustite. Selected oxide samples were studied by scanning electron microscopy to obtain electron backscattered diffraction patterns, which were used to identify the oxide species in the layer.

  15. Ultra-narrow bandpass filters for long range optical telecommunications at 1064nm and 1550nm, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Ultra-narrow bandpass filters with high off-band rejection are needed to maximize signal to noise for free space communications. Omega Optical is developing NIR...

  16. Ultra-narrow band perfect absorbers based on Fano resonance in MIM metamaterials

    Science.gov (United States)

    Zhang, Ming; Fang, Jiawen; Zhang, Fei; Chen, Junyan; Yu, Honglin

    2017-12-01

    Metallic nanostructures have attracted numerous attentions in the past decades due to their attractive plasmonic properties. Resonant plasmonic perfect absorbers have promising applications in a wide range of technologies including photothermal therapy, thermophotovoltaics, heat-assisted magnetic recording and biosensing. However, it remains to be a great challenge to achieve ultra-narrow band in near-infrared band with plasmonic materials due to the large optical losses in metals. In this letter, we introduced Fano resonance in MIM metamaterials composed of an asymmetry double elliptic cylinders (ADEC), which can achieve ultra-narrow band perfect absorbers. In theoretical calculations, we observed an ultranarrow band resonant absorption peak with the full width at half maximum (FWHM) of 8 nm and absorption amplitude exceeding 99% at 930 nm. Moreover, we demonstrate that the absorption increases with the increase of asymmetry and the absorption resonant wavelength can be tuned by changing the size and arrangement of the unit cell. The asymmetry metallic nanostructure also exhibit a higher refractive sensitivity as large as 503 nm/RIU with high figure of merit of 63, which is promising for high sensitive sensors. Results of this work are desirable for various potential applications in micro-technological structures such as biological sensors, narrowband emission, photodetectors and solar thermophotovoltaic (STPV) cells.

  17. Ultra-compact silicon nitride grating coupler for microscopy systems

    OpenAIRE

    Zhu, Yunpeng; Wang, Jie; Xie, Weiqiang; Tian, Bin; Li, Yanlu; Brainis, Edouard; Jiao, Yuqing; Van Thourhout, Dries

    2017-01-01

    Grating couplers have been widely used for coupling light between photonic chips and optical fibers. For various quantum-optics and bio-optics experiments, on the other hand, there is a need to achieve good light coupling between photonic chips and microscopy systems. Here, we propose an ultra-compact silicon nitride (SiN) grating coupler optimized for coupling light from a waveguide to a microscopy system. The grating coupler is about 4 by 2 mu m(2) in size and a 116 nm 1 dB bandwidth can be...

  18. Silicon nanowires for ultra-fast and ultrabroadband optical signal processing

    DEFF Research Database (Denmark)

    Ji, Hua; Hu, Hao; Pu, Minhao

    2015-01-01

    In this paper, we present recent research on silicon nanowires for ultra-fast and ultra-broadband optical signal processing at DTU Fotonik. The advantages and limitations of using silicon nanowires for optical signal processing are revealed through experimental demonstrations of various optical...

  19. Design and characterization of ultra-stretchable monolithic silicon fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-10-13

    Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

  20. Design and characterization of ultra-stretchable monolithic silicon fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Carreno, Armando Arpys Arevalo; Foulds, I. G.; Hussain, Muhammad Mustafa

    2014-01-01

    Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

  1. Modeling and validation of multiple joint reflections for ultra- narrow gap laser welding

    Energy Technology Data Exchange (ETDEWEB)

    Milewski, J.; Keel, G. [Los Alamos National Lab., NM (United States); Sklar, E. [Opticad Corp., Santa Fe, New Mexico (United States)

    1995-12-01

    The effects of multiple internal reflections within a laser weld joint as a function of joint geometry and processing conditions have been characterized. A computer model utilizing optical ray tracing is used to predict the reflective propagation of laser beam energy focused into the narrow gap of a metal joint for the purpose of predicting the location of melting and coalescence which form the weld. The model allows quantitative analysis of the effects of changes to joint geometry, laser design, materials and processing variables. This analysis method is proposed as a way to enhance process efficiency and design laser welds which display deep penetration and high depth to width aspect ratios, reduced occurrence of defects and enhanced melting. Of particular interest to laser welding is the enhancement of energy coupling to highly reflective materials. The weld joint is designed to act as an optical element which propagates and concentrates the laser energy deep within the joint to be welded. Experimentation has shown that it is possible to produce welds using multiple passes to achieve deep penetration and high depth to width aspect ratios without the use of filler material. The enhanced laser melting and welding of aluminum has been demonstrated. Optimization through modeling and experimental validation has resulted in the development of a laser welding process variant we refer to as Ultra-Narrow Gap Laser Welding.

  2. Silicon for ultra-low-level detectors and sup 32 Si

    Energy Technology Data Exchange (ETDEWEB)

    Plaga, R. (Max Planck Inst. fuer Kernphysik, Heidelberg (Germany))

    1991-11-15

    A recent dark matter experiment using a silicon diode detector confirms that the decay of {sup 32}Si is a dangerous background in ultra-low-level experiments using silicon as detector material or shielding. In this Letter we study the mechanism of how {sup 32}Si enters commercially available silicon. Ways to avoid this contamination are pointed out. Limits on the {sup 32}Si content of silicon from measurements with miniaturized low-level proportional counters are also given. (orig.).

  3. Topological investigation of electronic silicon nanoparticulate aggregates using ultra-small-angle X-ray scattering

    CSIR Research Space (South Africa)

    Jonah, EO

    2012-10-01

    Full Text Available The network topology of two types of silicon nanoparticles, produced by high energy milling and pyrolysis of silane, in layers deposited from inks on permeable and impermeable substrates has been quantitatively characterized using ultra-small-angle...

  4. Axial ion channeling patterns from ultra-thin silicon membranes

    International Nuclear Information System (INIS)

    Motapothula, M.; Dang, Z.Y.; Venkatesan, T.; Breese, M.B.H.; Rana, M.A.; Osman, A.

    2012-01-01

    We present channeling patterns produced by MeV protons transmitted through 55 nm thick [0 0 1] silicon membranes showing the early evolution of the axially channeled beam angular distribution for small tilts away from the [0 0 1], [0 1 1] and [1 1 1] axes. Instead of a ring-like “doughnut” distribution previously observed at small tilts to major axes in thicker membranes, geometric shapes such as squares and hexagons are observed along different axes in ultra-thin membranes. The different shapes arise because of the highly non-equilibrium transverse momentum distribution of the channeled beam during its initial propagation in the crystal and the reduced multiple scattering which allows the fine angular structure to be resolved. We describe a simple geometric construction of the intersecting planar channels at an axis to gain insight into the origin of the geometric shapes observed in such patterns and how they evolve into the ‘doughnut’ distributions in thicker crystals.

  5. On the channel width-dependence of the thermal conductivity in ultra-narrow graphene nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Karamitaheri, Hossein [Department of Electrical Engineering, University of Kashan, Kashan 87317-53153 (Iran, Islamic Republic of); Neophytou, Neophytos, E-mail: N.Neophytou@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2016-08-08

    The thermal conductivity of low-dimensional materials and graphene nanoribbons, in particular, is limited by the strength of line-edge-roughness scattering. One way to characterize the roughness strength is the dependency of the thermal conductivity on the channel's width in the form W{sup β}. Although in the case of electronic transport, this dependency is very well studied, resulting in W{sup 6} for nanowires and quantum wells and W{sup 4} for nanoribbons, in the case of phonon transport it is not yet clear what this dependence is. In this work, using lattice dynamics and Non-Equilibrium Green's Function simulations, we examine the width dependence of the thermal conductivity of ultra-narrow graphene nanoribbons under the influence of line edge-roughness. We show that the exponent β is in fact not a single well-defined number, but it is different for different parts of the phonon spectrum depending on whether phonon transport is ballistic, diffusive, or localized. The exponent β takes values β < 1 for semi-ballistic phonon transport, values β ≫ 1 for sub-diffusive or localized phonons, and β = 1 only in the case where the transport is diffusive. The overall W{sup β} dependence of the thermal conductivity is determined by the width-dependence of the dominant phonon modes (usually the acoustic ones). We show that due to the long phonon mean-free-paths, the width-dependence of thermal conductivity becomes a channel length dependent property, because the channel length determines whether transport is ballistic, diffusive, or localized.

  6. Telescope and mirrors development for the monolithic silicon carbide instrument of the osiris narrow angle camera

    Science.gov (United States)

    Calvel, Bertrand; Castel, Didier; Standarovski, Eric; Rousset, Gérard; Bougoin, Michel

    2017-11-01

    The international Rosetta mission, now planned by ESA to be launched in January 2003, will provide a unique opportunity to directly study the nucleus of comet 46P/Wirtanen and its activity in 2013. We describe here the design, the development and the performances of the telescope of the Narrow Angle Camera of the OSIRIS experiment et its Silicon Carbide telescope which will give high resolution images of the cometary nucleus in the visible spectrum. The development of the mirrors has been specifically detailed. The SiC parts have been manufactured by BOOSTEC, polished by STIGMA OPTIQUE and ion figured by IOM under the prime contractorship of ASTRIUM. ASTRIUM was also in charge of the alignment. The final optical quality of the aligned telescope is 30 nm rms wavefront error.

  7. Ultra-low loss nano-taper coupler for Silicon-on-Insulator ridge waveguide

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Ou, Haiyan

    2010-01-01

    A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler.......A nano-taper coupler is optimized specially for the transverse-magnetic mode for interfacing light between a silicon-on-insulator ridge waveguide and a single-mode fiber. An ultra-low coupling loss of ~0.36dB is achieved for the nano-taper coupler....

  8. Nano-Photonic Structures for Light Trapping in Ultra-Thin Crystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Prathap Pathi

    2017-01-01

    Full Text Available Thick wafer-silicon is the dominant solar cell technology. It is of great interest to develop ultra-thin solar cells that can reduce materials usage, but still achieve acceptable performance and high solar absorption. Accordingly, we developed a highly absorbing ultra-thin crystalline Si based solar cell architecture using periodically patterned front and rear dielectric nanocone arrays which provide enhanced light trapping. The rear nanocones are embedded in a silver back reflector. In contrast to previous approaches, we utilize dielectric photonic crystals with a completely flat silicon absorber layer, providing expected high electronic quality and low carrier recombination. This architecture creates a dense mesh of wave-guided modes at near-infrared wavelengths in the absorber layer, generating enhanced absorption. For thin silicon (<2 μm and 750 nm pitch arrays, scattering matrix simulations predict enhancements exceeding 90%. Absorption approaches the Lambertian limit at small thicknesses (<10 μm and is slightly lower (by ~5% at wafer-scale thicknesses. Parasitic losses are ~25% for ultra-thin (2 μm silicon and just 1%–2% for thicker (>100 μm cells. There is potential for 20 μm thick cells to provide 30 mA/cm2 photo-current and >20% efficiency. This architecture has great promise for ultra-thin silicon solar panels with reduced material utilization and enhanced light-trapping.

  9. Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

    NARCIS (Netherlands)

    Vermeer, Rolf; Berenschot, Johan W.; Sarajlic, Edin; Tas, Niels Roelof; Jansen, Henricus V.

    In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using $\\langle$111$\\rangle$ silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom

  10. Ultra-high efficiency, fast graphene micro-heater on silicon

    DEFF Research Database (Denmark)

    Yan, Siqi; Zhu, Xiaolong; Frandsen, Lars Hagedorn

    2017-01-01

    We demonstrate an ultra-high efficiency and fast graphene microheater on silicon photonic crystal waveguide. By taking advantage of slow-light effect, a tuning efficiency of 1.07 nm/mW and power consumption per free spectral range of 3.99 mW. A fast rise and decay times (10% to 90%) of only 750 ns...

  11. Ultra-thin silicon/electro-optic polymer hybrid waveguide modulators

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Feng; Spring, Andrew M. [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Sato, Hiromu [Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Maeda, Daisuke; Ozawa, Masa-aki; Odoi, Keisuke [Nissan Chemical Industries, Ltd., 2-10-1 Tuboi Nishi, Funabashi, Chiba 274-8507 (Japan); Aoki, Isao; Otomo, Akira [National Institute of Information and Communications Technology, 588-2 Iwaoka, Nishi-ku, Kobe 651-2492 (Japan); Yokoyama, Shiyoshi, E-mail: s-yokoyama@cm.kyushu-u.ac.jp [Institute for Materials Chemistry and Engineering, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan); Department of Molecular and Material Sciences, Kyushu University, 6-1 Kasuga-koen Kasuga, Fukuoka 816-8580 (Japan)

    2015-09-21

    Ultra-thin silicon and electro-optic (EO) polymer hybrid waveguide modulators have been designed and fabricated. The waveguide consists of a silicon core with a thickness of 30 nm and a width of 2 μm. The cladding is an EO polymer. Optical mode calculation reveals that 55% of the optical field around the silicon extends into the EO polymer in the TE mode. A Mach-Zehnder interferometer (MZI) modulator was prepared using common coplanar electrodes. The measured half-wave voltage of the MZI with 7 μm spacing and 1.3 cm long electrodes is 4.6 V at 1550 nm. The evaluated EO coefficient is 70 pm/V, which is comparable to that of the bulk EO polymer film. Using ultra-thin silicon is beneficial in order to reduce the side-wall scattering loss, yielding a propagation loss of 4.0 dB/cm. We also investigated a mode converter which couples light from the hybrid EO waveguide into a strip silicon waveguide. The calculation indicates that the coupling loss between these two devices is small enough to exploit the potential fusion of a hybrid EO polymer modulator together with a silicon micro-photonics device.

  12. Vacuum ultra-violet and ultra-violet scintillation light detection by means of silicon photomultipliers at cryogenic temperature

    Energy Technology Data Exchange (ETDEWEB)

    Falcone, A., E-mail: andrea.falcone@pv.infn.it [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Bertoni, R. [INFN Sezione di Milano Bicocca, Piazza della Scienza, 3, 20126 Milano (Italy); Boffelli, F. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Bonesini, M. [INFN Sezione di Milano Bicocca, Piazza della Scienza, 3, 20126 Milano (Italy); Cervi, T. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); Menegolli, A. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Montanari, C.; Prata, M.C.; Rappoldi, A.; Raselli, G.L.; Rossella, M.; Simonetta, M. [INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Spanu, M. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); Torti, M. [University of Pavia, via Bassi, 6, 27100 Pavia (Italy); INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy); Zani, A. [INFN Sezione di Pavia, via Bassi, 6, 27100 Pavia (Italy)

    2015-07-01

    We tested the performance of two types of silicon photomultipliers, AdvanSiD ASD-NUV-SiPM3S-P and Hamamatsu 3×3 MM-50 UM VUV2, both at room (300 K) and at liquid nitrogen (77 K) temperature: breakdown voltage, quenching resistance, signal shape, gain and dark counts rate have been studied as function of temperature. The response of the devices to ultra-violet light is also studied. - Highlights: • We tested 2 SiPMs both at room and at cryogenic temperature. • Breakdown voltage, quenching resistance, gain and dark rate were measured. • Efficiency for VUV light detection was measured.

  13. Ultra-Fast Optical Signal Processing in Nonlinear Silicon Waveguides

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Galili, Michael; Pu, Minhao

    2011-01-01

    We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals.......We describe recent demonstrations of exploiting highly nonlinear silicon nanowires for processing Tbit/s optical data signals. We perform demultiplexing and optical waveform sampling of 1.28 Tbit/s and wavelength conversion of 640 Gbit/s data signals....

  14. Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon

    Energy Technology Data Exchange (ETDEWEB)

    Dietrich, Paul M., E-mail: paul.dietrich@yahoo.de [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Glamsch, Stephan [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Ehlert, Christopher [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Institut für Chemie, Universität Potsdam, Karl-Liebknecht-Straße 24-25, 14476 Potsdam (Germany); Lippitz, Andreas [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany); Kulak, Nora [Freie Universität Berlin, Institut für Chemie und Biochemie, Fabeckstr. 34/36, 14195 Berlin (Germany); Unger, Wolfgang E.S. [Bundesanstalt für Materialforschung und – prüfung (BAM), Unter den Eichen 87, 12205 Berlin (Germany)

    2016-02-15

    Graphical abstract: - Highlights: • A synchrotron-based XPS method to analyze ultra-thin silane films is presented. • Specification and quantification of organic next to inorganic silicon is demonstrated. • Non-destructive chemical depth profiles of the silane monolayers were obtained. - Abstract: The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z{sub 95} of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) – inorganic (SiO{sub 2}/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS.

  15. 4D tracking with ultra-fast silicon detectors

    Science.gov (United States)

    F-W Sadrozinski, Hartmut; Seiden, Abraham; Cartiglia, Nicolò

    2018-02-01

    The evolution of particle detectors has always pushed the technological limit in order to provide enabling technologies to researchers in all fields of science. One archetypal example is the evolution of silicon detectors, from a system with a few channels 30 years ago, to the tens of millions of independent pixels currently used to track charged particles in all major particle physics experiments. Nowadays, silicon detectors are ubiquitous not only in research laboratories but in almost every high-tech apparatus, from portable phones to hospitals. In this contribution, we present a new direction in the evolution of silicon detectors for charge particle tracking, namely the inclusion of very accurate timing information. This enhancement of the present silicon detector paradigm is enabled by the inclusion of controlled low gain in the detector response, therefore increasing the detector output signal sufficiently to make timing measurement possible. After providing a short overview of the advantage of this new technology, we present the necessary conditions that need to be met for both sensor and readout electronics in order to achieve 4D tracking. In the last section, we present the experimental results, demonstrating the validity of our research path.

  16. Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

    Science.gov (United States)

    Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

    2017-03-01

    Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

  17. Generation of narrow energy spread ion beams via collisionless shock waves using ultra-intense 1 um wavelength laser systems

    Science.gov (United States)

    Albert, Felicie; Pak, A.; Kerr, S.; Lemos, N.; Link, A.; Patel, P.; Pollock, B. B.; Haberberger, D.; Froula, D.; Gauthier, M.; Glenzer, S. H.; Longman, A.; Manzoor, L.; Fedosejevs, R.; Tochitsky, S.; Joshi, C.; Fiuza, F.

    2017-10-01

    In this work, we report on electrostatic collisionless shock wave acceleration experiments that produced proton beams with peak energies between 10-17.5 MeV, with narrow energy spreads between Δ E / E of 10-20%, and with a total number of protons in these peaks of 1e7-1e8. These beams of ions were created by driving an electrostatic collisionless shock wave in a tailored near critical density plasma target using the ultra-intense ps duration Titan laser that operates at a wavelength of 1 um. The near critical density target was produced through the ablation of an initially 0.5 um thick Mylar foil with a separate low intensity laser. A narrow energy spread distribution of carbon / oxygen ions with a similar velocity to the accelerated proton distribution, consistent with the reflection and acceleration of ions from an electrostatic field, was also observed. This work was supported by Lawrence Livermore National Laboratory's Laboratory Directed Research and Development program under project 15-LW-095, and the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA2734.

  18. A low-cost, ultra-fast and ultra-low noise preamplifier for silicon avalanche photodiodes

    Science.gov (United States)

    Gasmi, Khaled

    2018-02-01

    An ultra-fast and ultra-low noise preamplifier for amplifying the fast and weak electrical signals generated by silicon avalanche photodiodes has been designed and developed. It is characterized by its simplicity, compactness, reliability and low cost of construction. A very wide bandwidth of 300 MHz, a very good linearity from 1 kHz to 280 MHz, an ultra-low noise level at the input of only 1.7 nV Hz-1/2 and a very good stability are its key features. The compact size (70 mm  ×  90 mm) and light weight (45 g), as well as its excellent characteristics, make this preamplifier very competitive compared to any commercial preamplifier. The preamplifier, which is a main part of the detection system of a homemade laser remote sensing system, has been successfully tested. In addition, it is versatile and can be used in any optical detection system requiring high speed and very low noise electronics.

  19. Frequency-bin entanglement of ultra-narrow band non-degenerate photon pairs

    Science.gov (United States)

    Rieländer, Daniel; Lenhard, Andreas; Jime`nez Farìas, Osvaldo; Máttar, Alejandro; Cavalcanti, Daniel; Mazzera, Margherita; Acín, Antonio; de Riedmatten, Hugues

    2018-01-01

    We demonstrate frequency-bin entanglement between ultra-narrowband photons generated by cavity enhanced spontaneous parametric down conversion. Our source generates photon pairs in widely non-degenerate discrete frequency modes, with one photon resonant with a quantum memory material based on praseodymium doped crystals and the other photon at telecom wavelengths. Correlations between the frequency modes are analyzed using phase modulators and narrowband filters before detection. We show high-visibility two photon interference between the frequency modes, allowing us to infer a coherent superposition of the modes. We develop a model describing the state that we create and use it to estimate optimal measurements to achieve a violation of the Clauser-Horne (CH) Bell inequality under realistic assumptions. With these settings we perform a Bell test and show a significant violation of the CH inequality, thus proving the entanglement of the photons. Finally we demonstrate the compatibility with a quantum memory material by using a spectral hole in the praseodymium (Pr) doped crystal as spectral filter for measuring high-visibility two-photon interference. This demonstrates the feasibility of combining frequency-bin entangled photon pairs with Pr-based solid state quantum memories.

  20. Ultra-low-loss inverted taper coupler for silicon-on-insulator ridge waveguide

    DEFF Research Database (Denmark)

    Pu, Minhao; Liu, Liu; Ou, Haiyan

    2010-01-01

    An ultra-low-loss coupler for interfacing a silicon-on-insulator ridge waveguide and a single-mode fiber in both polarizations is presented. The inverted taper coupler, embedded in a polymer waveguide, is optimized for both the transverse-magnetic and transverse-electric modes through tapering...... the width of the silicon-on-insulator waveguide from 450 nm down to less than 15 nm applying a thermal oxidation process. Two inverted taper couplers are integrated with a 3-mm long silicon-on-insulator ridge waveguide in the fabricated sample. The measured coupling losses of the inverted taper coupler...... for transverse-magnetic and transverse-electric modes are ~0.36 dB and ~0.66 dB per connection, respectively....

  1. Development of Ultra-Fast Silicon Detectors for 4D tracking

    Science.gov (United States)

    Staiano, A.; Arcidiacono, R.; Boscardin, M.; Dalla Betta, G. F.; Cartiglia, N.; Cenna, F.; Ferrero, M.; Ficorella, F.; Mandurrino, M.; Obertino, M.; Pancheri, L.; Paternoster, G.; Sola, V.

    2017-12-01

    In this contribution we review the progress towards the development of a novel type of silicon detectors suited for tracking with a picosecond timing resolution, the so called Ultra-Fast Silicon Detectors. The goal is to create a new family of particle detectors merging excellent position and timing resolution with GHz counting capabilities, very low material budget, radiation resistance, fine granularity, low power, insensitivity to magnetic field, and affordability. We aim to achieve concurrent precisions of ~ 10 ps and ~ 10 μm with a 50 μm thick sensor. Ultra-Fast Silicon Detectors are based on the concept of Low-Gain Avalanche Detectors, which are silicon detectors with an internal multiplication mechanism so that they generate a signal which is factor ~10 larger than standard silicon detectors. The basic design of UFSD consists of a thin silicon sensor with moderate internal gain and pixelated electrodes coupled to full custom VLSI chip. An overview of test beam data on time resolution and the impact on this measurement of radiation doses at the level of those expected at HL-LHC is presented. First I-V and C-V measurements on a new FBK sensor production of UFSD, 50 μm thick, with B and Ga, activated at two diffusion temperatures, with and without C co-implantation (in Low and High concentrations), and with different effective doping concentrations in the Gain layer, are shown. Perspectives on current use of UFSD in HEP experiments (UFSD detectors have been installed in the CMS-TOTEM Precision Protons Spectrometer for the forward physics tracking, and are currently taking data) and proposed applications for a MIP timing layer in the HL-LHC upgrade are briefly discussed.

  2. Coherent and non coherent atom optics experiment with an ultra-narrow beam of metastable rare gas atoms

    International Nuclear Information System (INIS)

    Grucker, J.

    2007-12-01

    In this thesis, we present a new type of atomic source: an ultra-narrow beam of metastable atoms produced by resonant metastability exchange inside a supersonic beam of rare gas atoms. We used the coherence properties of this beam to observe the diffraction of metastable helium, argon and neon atoms by a nano-transmission grating and by micro-reflection-gratings. Then, we evidenced transitions between Zeeman sublevels of neon metastable 3 P 2 state due to the quadrupolar part of Van der Waals potential. After we showed experimental proofs of the observation of this phenomenon, we calculated the transition probabilities in the Landau - Zener model. We discussed the interest of Van der Waals - Zeeman transitions for atom interferometry. Last, we described the Zeeman cooling of the supersonic metastable argon beam ( 3 P 2 ). We have succeeded in slowing down atoms to speeds below 100 m/s. We gave experimental details and showed the first time-of-flight measurements of slowed atoms

  3. Reliability assessment of ultra-thin HfO2 films deposited on silicon wafer

    International Nuclear Information System (INIS)

    Fu, Wei-En; Chang, Chia-Wei; Chang, Yong-Qing; Yao, Chih-Kai; Liao, Jiunn-Der

    2012-01-01

    Highlights: ► Nano-mechanical properties on annealed ultra-thin HfO 2 film are studied. ► By AFM analysis, hardness of the crystallized HfO 2 film significantly increases. ► By nano-indention, the film hardness increases with less contact stiffness. ► Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO 2 ) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO 2 films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO 2 films deposited on silicon wafers (HfO 2 /SiO 2 /Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO 2 (nominal thickness ≈10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO 2 phases for the atomic layer deposited HfO 2 . The HfSi x O y complex formed at the interface between HfO 2 and SiO 2 /Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO 2 film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically sensitive nano-indentation. Quality assessments on as-deposited and annealed HfO 2 films can be thereafter used to estimate the mechanical properties and adhesion of ultra-thin HfO 2

  4. Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

    2012-09-01

    Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

  5. Micro-architecture embedding ultra-thin interlayer to bond diamond and silicon via direct fusion

    Science.gov (United States)

    Kim, Jong Cheol; Kim, Jongsik; Xin, Yan; Lee, Jinhyung; Kim, Young-Gyun; Subhash, Ghatu; Singh, Rajiv K.; Arjunan, Arul C.; Lee, Haigun

    2018-05-01

    The continuous demand on miniaturized electronic circuits bearing high power density illuminates the need to modify the silicon-on-insulator-based chip architecture. This is because of the low thermal conductivity of the few hundred nanometer-thick insulator present between the silicon substrate and active layers. The thick insulator is notorious for releasing the heat generated from the active layers during the operation of devices, leading to degradation in their performance and thus reducing their lifetime. To avoid the heat accumulation, we propose a method to fabricate the silicon-on-diamond (SOD) microstructure featured by an exceptionally thin silicon oxycarbide interlayer (˜3 nm). While exploiting the diamond as an insulator, we employ spark plasma sintering to render the silicon directly fused to the diamond. Notably, this process can manufacture the SOD microarchitecture via a simple/rapid way and incorporates the ultra-thin interlayer for minute thermal resistance. The method invented herein expects to minimize the thermal interfacial resistance of the devices and is thus deemed as a breakthrough appealing to the current chip industry.

  6. Towards ultra-thin plasmonic silicon wafer solar cells with minimized efficiency loss.

    Science.gov (United States)

    Zhang, Yinan; Stokes, Nicholas; Jia, Baohua; Fan, Shanhui; Gu, Min

    2014-05-13

    The cost-effectiveness of market-dominating silicon wafer solar cells plays a key role in determining the competiveness of solar energy with other exhaustible energy sources. Reducing the silicon wafer thickness at a minimized efficiency loss represents a mainstream trend in increasing the cost-effectiveness of wafer-based solar cells. In this paper we demonstrate that, using the advanced light trapping strategy with a properly designed nanoparticle architecture, the wafer thickness can be dramatically reduced to only around 1/10 of the current thickness (180 μm) without any solar cell efficiency loss at 18.2%. Nanoparticle integrated ultra-thin solar cells with only 3% of the current wafer thickness can potentially achieve 15.3% efficiency combining the absorption enhancement with the benefit of thinner wafer induced open circuit voltage increase. This represents a 97% material saving with only 15% relative efficiency loss. These results demonstrate the feasibility and prospect of achieving high-efficiency ultra-thin silicon wafer cells with plasmonic light trapping.

  7. The kinetics of dewetting ultra-thin Si layers from silicon dioxide

    International Nuclear Information System (INIS)

    Aouassa, M; Favre, L; Ronda, A; Berbezier, I; Maaref, H

    2012-01-01

    In this study, we investigate the kinetically driven dewetting of ultra-thin silicon films on silicon oxide substrate under ultra-high vacuum, at temperatures where oxide desorption and silicon lost could be ruled out. We show that in ultra-clean experimental conditions, the three different regimes of dewetting, namely (i) nucleation of holes, (ii) film retraction and (iii) coalescence of holes, can be quantitatively measured as a function of temperature, time and thickness. For a nominal flat clean sample these three regimes co-exist during the film retraction until complete dewetting. To discriminate their roles in the kinetics of dewetting, we have compared the dewetting evolution of flat unpatterned crystalline silicon layers (homogeneous dewetting), patterned crystalline silicon layers (heterogeneous dewetting) and amorphous silicon layers (crystallization-induced dewetting). The first regime (nucleation) is described by a breaking time which follows an exponential evolution with temperature with an activation energy E H ∼ 3.2 eV. The second regime (retraction) is controlled by surface diffusion of matter from the edges of the holes. It involves a very fast redistribution of matter onto the flat Si layer, which prevents the formation of a rim on the edges of the holes during both heterogeneous and homogeneous dewetting. The time evolution of the linear dewetting front measured during heterogeneous dewetting follows a characteristic power law x ∼ t 0.45 consistent with a surface diffusion-limited mechanism. It also evolves as x ∼ h -1 as expected from mass conservation in the absence of thickened rim. When the surface energy is isotropic (during dewetting of amorphous Si) the dynamics of dewetting is considerably modified: firstly, there is no measurable breaking time; secondly, the speed of dewetting is two orders of magnitude larger than for crystalline Si; and thirdly, the activation energy of dewetting is much smaller due to the different driving

  8. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

    2017-10-06

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  9. Ultra-fast photon counting with a passive quenching silicon photomultiplier in the charge integration regime

    Science.gov (United States)

    Zhang, Guoqing; Lina, Liu

    2018-02-01

    An ultra-fast photon counting method is proposed based on the charge integration of output electrical pulses of passive quenching silicon photomultipliers (SiPMs). The results of the numerical analysis with actual parameters of SiPMs show that the maximum photon counting rate of a state-of-art passive quenching SiPM can reach ~THz levels which is much larger than that of the existing photon counting devices. The experimental procedure is proposed based on this method. This photon counting regime of SiPMs is promising in many fields such as large dynamic light power detection.

  10. Ultra-high Q terahertz whispering-gallery modes in a silicon resonator

    Science.gov (United States)

    Vogt, Dominik Walter; Leonhardt, Rainer

    2018-05-01

    We report on the first experimental demonstration of terahertz (THz) whispering-gallery modes (WGMs) with an ultra-high quality factor of 1.5 × 104 at 0.62 THz. The WGMs are observed in a high resistivity float zone silicon spherical resonator coupled to a sub-wavelength silica waveguide. A detailed analysis of the coherent continuous wave THz spectroscopy measurements combined with a numerical model based on Mie-Debye-Aden-Kerker theory allows us to unambiguously identify the observed higher order radial THz WGMs.

  11. Ultra-thin alumina and silicon nitride MEMS fabricated membranes for the electron multiplication

    Science.gov (United States)

    Prodanović, V.; Chan, H. W.; Graaf, H. V. D.; Sarro, P. M.

    2018-04-01

    In this paper we demonstrate the fabrication of large arrays of ultrathin freestanding membranes (tynodes) for application in a timed photon counter (TiPC), a novel photomultiplier for single electron detection. Low pressure chemical vapour deposited silicon nitride (Si x N y ) and atomic layer deposited alumina (Al2O3) with thicknesses down to only 5 nm are employed for the membrane fabrication. Detailed characterization of structural, mechanical and chemical properties of the utilized films is carried out for different process conditions and thicknesses. Furthermore, the performance of the tynodes is investigated in terms of secondary electron emission, a fundamental attribute that determines their applicability in TiPC. Studied features and presented fabrication methods may be of interest for other MEMS application of alumina and silicon nitride as well, in particular where strong ultra-thin membranes are required.

  12. Ultra-High Capacity Silicon Photonic Interconnects through Spatial Multiplexing

    Science.gov (United States)

    Chen, Christine P.

    The market for higher data rate communication is driving the semiconductor industry to develop new techniques of writing at smaller scales, while continuing to scale bandwidth at low power consumption. Silicon photonic (SiPh) devices offer a potential solution to the electronic interconnect bandwidth bottleneck. SiPh leverages the technology commensurate of decades of fabrication development with the unique functionality of next-generation optical interconnects. Finer fabrication techniques have allowed for manufacturing physical characteristics of waveguide structures that can support multiple modes in a single waveguide. By refining modal characteristics in photonic waveguide structures, through mode multiplexing with the asymmetric y-junction and microring resonator, higher aggregate data bandwidth is demonstrated via various combinations of spatial multiplexing, broadening applications supported by the integrated platform. The main contributions of this dissertation are summarized as follows. Experimental demonstrations of new forms of spatial multiplexing combined together exhibit feasibility of data transmission through mode-division multiplexing (MDM), mode-division and wavelength-division multiplexing (MDM-WDM), and mode-division and polarization-division multiplexing (MDM-PDM) through a C-band, Si photonic platform. Error-free operation through mode multiplexers and demultiplexers show how data can be viably scaled on multiple modes and with existing spatial domains simultaneously. Furthermore, we explore expanding device channel support from two to three arms. Finding that a slight mismatch in the third arm can increase crosstalk contributions considerably, especially when increasing data rate, we explore a methodical way to design the asymmetric y-junction device by considering its angles and multiplexer/demultiplexer arm width. By taking into consideration device fabrication variations, we turn towards optimizing device performance post

  13. Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

    Directory of Open Access Journals (Sweden)

    Mohamed T. Ghoneim

    2015-12-01

    Full Text Available In today’s digital world, complementary metal oxide semiconductor (CMOS technology enabled scaling of bulk mono-crystalline silicon (100 based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm mono-crystalline (100 silicon (detached from bulk substrate by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs with high-κ/metal gate stacks.

  14. Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

    KAUST Repository

    Ghoneim, Mohamed T.; Fahad, Hossain M.; Hussain, Aftab M.; Rojas, Jhonathan Prieto; Sevilla, Galo T.; Alfaraj, Nasir; Lizardo, Ernesto B.; Hussain, Muhammad Mustafa

    2015-01-01

    In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

  15. Enhanced cooling in mono-crystalline ultra-thin silicon by embedded micro-air channels

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-12-11

    In today’s digital world, complementary metal oxide semiconductor (CMOS) technology enabled scaling of bulk mono-crystalline silicon (100) based electronics has resulted in their higher performance but with increased dynamic and off-state power consumption. Such trade-off has caused excessive heat generation which eventually drains the charge of battery in portable devices. The traditional solution utilizing off-chip fans and heat sinks used for heat management make the whole system bulky and less mobile. Here we show, an enhanced cooling phenomenon in ultra-thin (>10 μm) mono-crystalline (100) silicon (detached from bulk substrate) by utilizing deterministic pattern of porous network of vertical “through silicon” micro-air channels that offer remarkable heat and weight management for ultra-mobile electronics, in a cost effective way with 20× reduction in substrate weight and a 12% lower maximum temperature at sustained loads. We also show the effectiveness of this event in functional MOS field effect transistors (MOSFETs) with high-κ/metal gate stacks.

  16. Electronic structures of ultra-thin silicon carbides deposited on graphite

    International Nuclear Information System (INIS)

    Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

    2004-01-01

    Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

  17. Narrow, highly P-doped, planar wires in silicon created by scanning probe microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Ruess, F J [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Goh, K E J [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Butcher, M J [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Reusch, T C G [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Oberbeck, L [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia); Weber, B [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Hamilton, A R [School of Physics, University of New South Wales, Sydney, NSW 2052 (Australia); Simmons, M Y [Australian Research Council Centre of Excellence for Quantum Computer Technology, University of New South Wales, Sydney, NSW 2052 (Australia)

    2007-01-31

    We demonstrate the use of a scanning tunnelling microscope (STM) to pattern buried, highly planar phosphorus-doped silicon wires with widths down to the sub-10 nm level. We confirm the structural integrity of these wires using both buried dopant imaging techniques and ex situ electrical characterization. Four terminal I-V characteristics at 4 K show ohmic behaviour for all wires with resistivities between 1 and 24 x 10{sup -8} {omega} cm. Magnetotransport measurements reveal that conduction is dominated by disordered scattering with quantum corrections consistent with 2D weak localization theory. Our results show that these quantum corrections become more pronounced as the electron phase coherence length approaches the width of the wire.

  18. Dual-side and three-dimensional microelectrode arrays fabricated from ultra-thin silicon substrates

    International Nuclear Information System (INIS)

    Du, Jiangang; Masmanidis, Sotiris C; Roukes, Michael L

    2009-01-01

    A method for fabricating planar implantable microelectrode arrays was demonstrated using a process that relied on ultra-thin silicon substrates, which ranged in thickness from 25 to 50 µm. The challenge of handling these fragile materials was met via a temporary substrate support mechanism. In order to compensate for putative electrical shielding of extracellular neuronal fields, separately addressable electrode arrays were defined on each side of the silicon device. Deep reactive ion etching was employed to create sharp implantable shafts with lengths of up to 5 mm. The devices were flip-chip bonded onto printed circuit boards (PCBs) by means of an anisotropic conductive adhesive film. This scalable assembly technique enabled three-dimensional (3D) integration through formation of stacks of multiple silicon and PCB layers. Simulations and measurements of microelectrode noise appear to suggest that low impedance surfaces, which could be formed by electrodeposition of gold or other materials, are required to ensure an optimal signal-to-noise ratio as well a low level of interchannel crosstalk

  19. Ultra-high speed all-optical signal processing using silicon waveguides and a carbon nanotubes based mode-locked laser

    DEFF Research Database (Denmark)

    Ji, Hua

    This thesis concerns the use of nano-engineered silicon waveguides for ultra-high speed optical serial data signal processing. The fundamental nonlinear properties of nano-engineered silicon waveguides are characterized. Utilizing the nonlinear effect in nano-engineered silicon waveguides for dem...

  20. Electrical activation of solid-phase epitaxially regrown ultra-low energy boron implants in Ge preamorphised silicon and SOI

    International Nuclear Information System (INIS)

    Hamilton, J.J.; Collart, E.J.H.; Colombeau, B.; Jeynes, C.; Bersani, M.; Giubertoni, D.; Sharp, J.A.; Cowern, N.E.B.; Kirkby, K.J.

    2005-01-01

    The formation of highly activated ultra-shallow junctions (USJ) is one of the key requirements for the next generation of CMOS devices. One promising method for achieving this is the use of Ge preamorphising implants (PAI) prior to ultra-low energy B implantation. In future technology nodes, bulk silicon wafers may be supplanted by Silicon-on-Insulator (SOI), and an understanding of the Solid Phase Epitaxial (SPE) regrowth process and its correlation to dopant electrical activation in both bulk silicon and SOI is essential in order to understand the impact of this potential technology change. This kind of understanding will also enable tests of fundamental models for defect evolution and point-defect reactions at silicon/oxide interfaces. In the present work, B is implanted into Ge PAI silicon and SOI wafers with different PAI conditions and B doses, and resulting samples are annealed at various temperatures and times. Glancing-exit Rutherford Backscattering Spectrometry (RBS) is used to monitor the regrowth of the amorphous silicon, and the resulting redistribution and electrical activity of B are monitored by SIMS and Hall measurements. The results confirm the expected enhancement of regrowth velocity by B doping, and show that this velocity is otherwise independent of the substrate type and the Ge implant distribution within the amorphised layer. Hall measurements on isochronally annealed samples show that B deactivates less in SOI material than in bulk silicon, in cases where the Ge PAI end-of-range defects are close to the SOI back interface

  1. Widely tunable single-/dual-wavelength fiber lasers with ultra-narrow linewidth and high OSNR using high quality passive subring cavity and novel tuning method.

    Science.gov (United States)

    Feng, Ting; Ding, Dongliang; Yan, Fengping; Zhao, Ziwei; Su, Hongxin; Yao, X Steve

    2016-08-22

    High stability single- and dual-wavelength compound cavity erbium-doped fiber lasers (EDFLs) with ultra-narrow linewidth, high optical signal to noise ratio (OSNR) and widely tunable range are demonstrated. Different from using traditional cascaded Type-1/Type-2 fiber rings as secondary cavities, we nest a Type-1 ring inside a Type-2 ring to form a passive subring cavity to achieve single-longitudinal-mode (SLM) lasing with ultra-narrow linewidth for the first time. We also show that the SLM lasing stability can be further improved by inserting a length of polarization maintaining fiber in the Type-2 ring. Using a uniform fiber Bragg grating (FBG) and two superimposed FBGs as mode restricting elements, respectively, we obtain a single-wavelength EDFL with a linewidth as narrow as 715 Hz and an OSNR as high as 73 dB, and a dual-wavelength EDFL with linewidths less than 1 kHz and OSNRs higher than 68 dB for both lasing wavelengths. Finally, by employing a novel self-designed strain adjustment device capable of applying both the compression and tension forces to the FBGs for wavelength tuning, we achieve the tuning range larger than 10 nm for both of the EDFLs.

  2. Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

    Science.gov (United States)

    Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

    2009-01-01

    Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

  3. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.; Hanna, Amir; Hussain, Muhammad Mustafa

    2014-01-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  4. CMOS compatible fabrication of flexible and semi-transparent FeRAM on ultra-thin bulk monocrystalline silicon (100) fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-08-01

    Commercialization of flexible electronics requires reliable, high performance, ultra-compact and low power devices. To achieve them, we fabricate traditional electronics on bulk mono-crystalline silicon (100) and transform the top portion into an ultra-thin flexible silicon fabric with prefabricated devices, preserving ultra-large-scale-integration density and same device performance. This can be done in a cost effective manner due to its full compatibility with standard CMOS processes. In this paper, using the same approach, for the first time we demonstrate a ferroelectric random access memory (FeRAM) cell on flexible silicon fabric platform and assess its functionality and practical potential.

  5. Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong; Mi, Hongyi; Kim, Munho; Ma, Zhenqiang, E-mail: mazq@engr.wisc.edu [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Zhao, Deyin; Zhou, Weidong [Nanophotonics Lab, Department of Electrical Engineering, University of Texas at Arlington, Arlington, Texas 76019 (United States); Yin, Xin; Wang, Xudong [Department of Material Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2015-05-04

    In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measured from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.

  6. Beam test results of a 16 ps timing system based on ultra-fast silicon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Cartiglia, N., E-mail: cartiglia@to.infn.it [INFN, Torino (Italy); Staiano, A.; Sola, V. [INFN, Torino (Italy); Arcidiacono, R. [INFN, Torino (Italy); Università del Piemonte Orientale (Italy); Cirio, R.; Cenna, F.; Ferrero, M.; Monaco, V.; Mulargia, R.; Obertino, M.; Ravera, F.; Sacchi, R. [INFN, Torino (Italy); Università di Torino, Torino (Italy); Bellora, A.; Durando, S. [Università di Torino, Torino (Italy); Mandurrino, M. [Politecnico di Torino, Torino (Italy); Minafra, N. [University of Kansas, KS (United States); Fadeyev, V.; Freeman, P.; Galloway, Z.; Gkougkousis, E. [SCIPP, University of California Santa Cruz, CA 95064 (United States); and others

    2017-04-01

    In this paper we report on the timing resolution obtained in a beam test with pions of 180 GeV/c momentum at CERN for the first production of 45 µm thick Ultra-Fast Silicon Detectors (UFSD). UFSD are based on the Low-Gain Avalanche Detector (LGAD) design, employing n-on-p silicon sensors with internal charge multiplication due to the presence of a thin, low-resistivity diffusion layer below the junction. The UFSD used in this test had a pad area of 1.7 mm{sup 2}. The gain was measured to vary between 5 and 70 depending on the sensor bias voltage. The experimental setup included three UFSD and a fast trigger consisting of a quartz bar readout by a SiPM. The timing resolution was determined by doing Gaussian fits to the time-of-flight of the particles between one or more UFSD and the trigger counter. For a single UFSD the resolution was measured to be 34 ps for a bias voltage of 200 V, and 27 ps for a bias voltage of 230 V. For the combination of 3 UFSD the timing resolution was 20 ps for a bias voltage of 200 V, and 16 ps for a bias voltage of 230 V.

  7. Ultra-Smooth ZnS Films Grown on Silicon via Pulsed Laser Deposition

    Science.gov (United States)

    Reidy, Christopher; Tate, Janet

    2011-10-01

    Ultra-smooth, high quality ZnS films were grown on (100) and (111) oriented Si wafers via pulsed laser deposition with a KrF excimer laser in UHV (10-9 Torr). The resultant films were examined with optical spectroscopy, electron diffraction, and electron probe microanalysis. The films have an rms roughness of ˜1.5 nm, and the film stoichiometry is approximately Zn:S :: 1:0.87. Additionally, each film exhibits an optical interference pattern which is not a function of probing location on the sample, indicating excellent film thickness uniformity. Motivation for high-quality ZnS films comes from a proposed experiment to measure carrier amplification via impact ionization at the boundary between a wide-gap and a narrow-gap semiconductor. If excited charge carriers in a sufficiently wide-gap harvester can be extracted into a narrow-gap host material, impact ionization may occur. We seek near-perfect interfaces between ZnS, with a direct gap between 3.3 and 3.7 eV, and Si, with an indirect gap of 1.1 eV.

  8. Millimeter-wave silicon-based ultra-wideband automotive radar transceivers

    Science.gov (United States)

    Jain, Vipul

    Since the invention of the integrated circuit, the semiconductor industry has revolutionized the world in ways no one had ever anticipated. With the advent of silicon technologies, consumer electronics became light-weight and affordable and paved the way for an Information-Communication-Entertainment age. While silicon almost completely replaced compound semiconductors from these markets, it has been unable to compete in areas with more stringent requirements due to technology limitations. One of these areas is automotive radar sensors, which will enable next-generation collision-warning systems in automobiles. A low-cost implementation is absolutely essential for widespread use of these systems, which leads us to the subject of this dissertation---silicon-based solutions for automotive radars. This dissertation presents architectures and design techniques for mm-wave automotive radar transceivers. Several fully-integrated transceivers and receivers operating at 22-29 GHz and 77-81 GHz are demonstrated in both CMOS and SiGe BiCMOS technologies. Excellent performance is achieved indicating the suitability of silicon technologies for automotive radar sensors. The first CMOS 22-29-GHz pulse-radar receiver front-end for ultra-wideband radars is presented. The chip includes a low noise amplifier, I/Q mixers, quadrature voltage-controlled oscillators, pulse formers and variable-gain amplifiers. Fabricated in 0.18-mum CMOS, the receiver achieves a conversion gain of 35-38.1 dB and a noise figure of 5.5-7.4 dB. Integration of multi-mode multi-band transceivers on a single chip will enable next-generation low-cost automotive radar sensors. Two highly-integrated silicon ICs are designed in a 0.18-mum BiCMOS technology. These designs are also the first reported demonstrations of mm-wave circuits with high-speed digital circuits on the same chip. The first mm-wave dual-band frequency synthesizer and transceiver, operating in the 24-GHz and 77-GHz bands, are demonstrated. All

  9. Influence of organic solvent on optical and structural properties of ultra-small silicon dots synthesized by UV laser ablation in liquid.

    Science.gov (United States)

    Intartaglia, Romuald; Bagga, Komal; Genovese, Alessandro; Athanassiou, Athanassia; Cingolani, Roberto; Diaspro, Alberto; Brandi, Fernando

    2012-11-28

    Ultra small silicon nanoparticles (Si-NPs) with narrow size distribution are prepared in a one step process by UV picosecond laser ablation of silicon bulk in liquid. Characterization by electron microscopy and absorption spectroscopy proves Si-NPs generation with an average size of 2 nm resulting from an in situ photofragmentation effect. In this context, the current work aims to explore the liquid medium (water and toluene) effect on the Si-NPs structure and on the optical properties of the colloidal solution. Si-NPs with high pressure structure (s.g. Fm3m) and diamond-like structure (s.g. Fd3m), in water, and SiC moissanite 3C phase (s.g. F4[combining macron]3m) in toluene are revealed by the means of High-Resolution TEM and HAADF-STEM measurements. Optical investigations show that water-synthesized Si-NPs have blue-green photoluminescence emission characterized by signal modulation at a frequency of 673 cm(-1) related to electron-phonon coupling. The synthesis in toluene leads to generation of Si-NPs embedded in the graphitic carbon-polymer composite which has intrinsic optical properties at the origin of the optical absorption and luminescence of the obtained colloidal solution.

  10. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    Energy Technology Data Exchange (ETDEWEB)

    Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

    2011-12-15

    Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  11. Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

    International Nuclear Information System (INIS)

    Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

    2011-01-01

    Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

  12. Topological investigation of electronic silicon nanoparticulate aggregates using ultra-small-angle X-ray scattering

    International Nuclear Information System (INIS)

    Jonah, E. O.; Britton, D. T.; Beaucage, P.; Rai, D. K.; Beaucage, G.; Magunje, B.; Ilavsky, J.; Scriba, M. R.; Härting, M.

    2012-01-01

    The network topology of two types of silicon nanoparticles, produced by high energy milling and pyrolysis of silane, in layers deposited from inks on permeable and impermeable substrates has been quantitatively characterized using ultra-small-angle X-ray scattering, supported by scanning electron microscopy observations. The milled particles with a highly polydisperse size distribution form agglomerates, which in turn cluster to form larger aggregates with a very high degree of aggregation. Smaller nanoparticles with less polydisperse size distribution synthesized by thermal catalytic pyrolysis of silane form small open clusters. The Sauter mean diameters of the primary particles of the two types of nanoparticles were obtained from USAXS particle volume to surface ratio, with values of ∼41 and ∼21 nm obtained for the high energy milled and pyrolysis samples, respectively. Assuming a log-normal distribution of the particles, the geometric standard deviation of the particles was calculated to be ∼1.48 for all the samples, using parameters derived from the unified fit to the USAXS data. The flow properties of the inks and substrate combination lead to quantitative changes in the mean particle separation, with slowly curing systems with good capillary flow resulting in denser networks with smaller aggregates and better contact between particles.

  13. Full-sky survey searching for ultra-narrow-band artificial CW signals: analysis of the results of Project META

    Science.gov (United States)

    Lemarchand, Guillermo A.

    1996-06-01

    Project META (Megachannel ExtraTerrestrial Assay), a full-sky survey for artificial narrow-band signals, has been conducted from the Harvard/Smithsonian 26 m radiotelescope at Agassiz Station and from one of the two 30 m radiotelescopes of the Instituto Argentino de Radioastronomia (IAR). The search was performed near the 1420 MHz line of neutral hydrogen, and its second harmonic, using two 8.4 X 10(superscript 6) channel Fourier spectrometers of 0.05 Hz resolution and 400 kHz of instantaneous bandwidth. The observing frequency was corrected both for motions with respect to three astronomical inertial frames, and for the effect of Earth's rotation, which provides a characteristic changing signature for narrow-band signals of extraterrestrial origin. Among the 6 X 10(superscript 13) spectral channels searched in the northern hemisphere, Horowitz and Sagan reported 37 candidates events exceeding the average threshold of 1.7 X 10(superscript -23) W m(superscript -2), while in the southern hemisphere among 2 X 10(superscript 13) spectral channels analyzed we found 19 events exceeding the same threshold. The strongest signals that survive culling for terrestrial interference lie in or near the Galactic Plane. The first high resolution southern target search around 71 stars (-90 degrees intelligence. It is showed that these narrow-band non-repeating 'events' found by Project META can be generated by (a) radiometer noise fluctuations, (b) a population of constant galactic sources which undergo deep fading and amplification due to interstellar scintillation, consistent with ETI transmissions and (c) real, transient signals of either terrestrial or extraterrestrial origin. The Bayesian test shows that hypothesis (b) and (c) are both highly preferred to (a), but the first two are about equally likely. Using this analysis we discuss the best observing strategies to determine the real origin of these 'events'.

  14. Tunneling magnetoresistance of ultra-thin Co-SiO2 granular films with narrow current channels

    International Nuclear Information System (INIS)

    Honda, S.; Hirata, M.; Ishimaru, M.

    2005-01-01

    We have constructed the tunneling magnetoresistance (TMR) junction of AuCr/SiO 2 /Co-SiO 2 /SiO 2 /AuCr with narrow current channels, where the TMR occurs in the Co-SiO 2 layer with 10-50 nm thickness. The magnetic properties are independent of thickness, while the TMR properties depend fairly on thickness. The current (I)-bias voltage (V B ) curve is nonlinear, namely the differential resistivity decreases with increasing V B , and also the magnetoresistance ratio decreases

  15. ULTRA-NARROW NEGATIVE FLARE FRONT OBSERVED IN HELIUM-10830 Å USING THE 1.6 m NEW SOLAR TELESCOPE

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Yan; Liu, Chang; Jing, Ju; Wang, Haimin [Space Weather Research Lab, Center for Solar-Terrestrial Research, New Jersey Institute of Technology, 323 Martin Luther King Blvd, Newark, NJ 07102-1982 (United States); Cao, Wenda; Gary, Dale [Big Bear Solar Observatory, New Jersey Institute of Technology 323 Martin Luther King Blvd, Newark, NJ 07102-1982 (United States); Ding, Mingde [School of Astronomy and Space Science, Nanjing University, Nanjing 210093 (China); Kleint, Lucia [Fachhochschule Nordwestschweiz (FHNW), Institute of 4D technologies Bahnhofstr. 6, CH-5210 Windisch (Switzerland); Su, Jiangtao [Key Laboratory of Solar Activity, National Astronomical Observatories, Chinese Academy of Sciences, Beijing 100012 (China); Ji, Haisheng [Purple Mountain Observatory, 2 Beijing Xi Lu, Nanjing, 210008 (China); Chae, Jongchul; Cho, Kyuhyoun [Astronomy Program, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Cho, Kyungsuk [Korea Astronomy and Space Science Institute, Daedeokdae-ro 776, Yuseong-gu, Daejeon 305-348 (Korea, Republic of)

    2016-03-10

    Solar flares are sudden flashes of brightness on the Sun and are often associated with coronal mass ejections and solar energetic particles that have adverse effects on the near-Earth environment. By definition, flares are usually referred to as bright features resulting from excess emission. Using the newly commissioned 1.6 m New Solar Telescope at Big Bear Solar Observatory, we show a striking “negative” flare with a narrow but unambiguous “dark” moving front observed in He i 10830 Å, which is as narrow as 340 km and is associated with distinct spectral characteristics in Hα and Mg ii lines. Theoretically, such negative contrast in He i 10830 Å can be produced under special circumstances by nonthermal electron collisions or photoionization followed by recombination. Our discovery, made possible due to unprecedented spatial resolution, confirms the presence of the required plasma conditions and provides unique information in understanding the energy release and radiative transfer in astronomical objects.

  16. ULTRA-NARROW NEGATIVE FLARE FRONT OBSERVED IN HELIUM-10830 Å USING THE 1.6 m NEW SOLAR TELESCOPE

    International Nuclear Information System (INIS)

    Xu, Yan; Liu, Chang; Jing, Ju; Wang, Haimin; Cao, Wenda; Gary, Dale; Ding, Mingde; Kleint, Lucia; Su, Jiangtao; Ji, Haisheng; Chae, Jongchul; Cho, Kyuhyoun; Cho, Kyungsuk

    2016-01-01

    Solar flares are sudden flashes of brightness on the Sun and are often associated with coronal mass ejections and solar energetic particles that have adverse effects on the near-Earth environment. By definition, flares are usually referred to as bright features resulting from excess emission. Using the newly commissioned 1.6 m New Solar Telescope at Big Bear Solar Observatory, we show a striking “negative” flare with a narrow but unambiguous “dark” moving front observed in He i 10830 Å, which is as narrow as 340 km and is associated with distinct spectral characteristics in Hα and Mg ii lines. Theoretically, such negative contrast in He i 10830 Å can be produced under special circumstances by nonthermal electron collisions or photoionization followed by recombination. Our discovery, made possible due to unprecedented spatial resolution, confirms the presence of the required plasma conditions and provides unique information in understanding the energy release and radiative transfer in astronomical objects

  17. A new generation of ultra-dense optical I/O for silicon photonics

    Science.gov (United States)

    Wlodawski, Mitchell S.; Kopp, Victor I.; Park, Jongchul; Singer, Jonathan; Hubner, Eric E.; Neugroschl, Daniel; Chao, Norman; Genack, Azriel Z.

    2014-03-01

    In response to the optical packaging needs of a rapidly growing silicon photonics market, Chiral Photonics, Inc. (CPI) has developed a new generation of ultra-dense-channel, bi-directional, all-optical, input/output (I/O) couplers that bridge the data transport gap between standard optical fibers and photonic integrated circuits. These couplers, called Pitch Reducing Optical Fiber Arrays (PROFAs), provide a means to simultaneously match both the mode field and channel spacing (i.e. pitch) between an optical fiber array and a photonic integrated circuit (PIC). Both primary methods for optically interfacing with PICs, via vertical grating couplers (VGCs) and edge couplers, can be addressed with PROFAs. PROFAs bring the signal-carrying cores, either multimode or singlemode, of many optical fibers into close proximity within an all-glass device that can provide low loss coupling to on-chip components, including waveguides, gratings, detectors and emitters. Two-dimensional (2D) PROFAs offer more than an order of magnitude enhancement in channel density compared to conventional one-dimensional (1D) fiber arrays. PROFAs can also be used with low vertical profile solutions that simplify optoelectronic packaging while reducing PIC I/O real estate usage requirements. PROFA technology is based on a scalable production process for microforming glass preform assemblies as they are pulled through a small oven. An innovative fiber design, called the "vanishing core," enables tailoring the mode field along the length of the PROFA to meet the coupling needs of disparate waveguide technologies, such as fiber and onchip. Examples of single- and multi-channel couplers fabricated using this technology will be presented.

  18. Quantum confinement effects and source-to-drain tunneling in ultra-scaled double-gate silicon n-MOSFETs

    International Nuclear Information System (INIS)

    Jiang Xiang-Wei; Li Shu-Shen

    2012-01-01

    By using the linear combination of bulk band (LCBB) method incorporated with the top of the barrier splitting (TBS) model, we present a comprehensive study on the quantum confinement effects and the source-to-drain tunneling in the ultra-scaled double-gate (DG) metal—oxide—semiconductor field-effect transistors (MOSFETs). A critical body thickness value of 5 nm is found, below which severe valley splittings among different X valleys for the occupied charge density and the current contributions occur in ultra-thin silicon body structures. It is also found that the tunneling current could be nearly 100% with an ultra-scaled channel length. Different from the previous simulation results, it is found that the source-to-drain tunneling could be effectively suppressed in the ultra-thin body thickness (2.0 nm and below) by the quantum confinement and the tunneling could be suppressed down to below 5% when the channel length approaches 16 nm regardless of the body thickness. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  19. Ultra-flattened nearly-zero dispersion and ultrahigh nonlinear slot silicon photonic crystal fibers with ultrahigh birefringence

    Science.gov (United States)

    Liao, Jianfei; Xie, Yingmao; Wang, Xinghua; Li, Dongbo; Huang, Tianye

    2017-07-01

    A slot silicon photonic crystal fiber (PCF) is proposed to simultaneously achieve ultrahigh birefringence, large nonlinearity and ultra-flattened nearly-zero dispersion over a wide wavelength range. By taking advantage on the slot effect, ultrahigh birefringence up to 0.0736 and ultrahigh nonlinear coefficient up to 211.48 W-1 m-1 for quasi-TE mode can be obtained at the wavelength of 1.55 μm. Moreover, ultra-flattened dispersion of 0.49 ps/(nm km) for quasi-TE mode can be achieved over a 180 nm wavelength range with low dispersion slope of 1.85 × 10-3 ps/(nm2 km) at 1.55 μm. Leveraging on these advantages, the proposed slot PCF has great potential for efficient all-optical signal processing applications.

  20. Application of an improved band-gap narrowing model to the numerical simulation of recombination properties of phosphorus-doped silicon emitters

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, J.O. [Fraunhofer Institute for Solar Energy Systems ISE, Oltmannsstr, 5, D-79100 Freiburg (Germany); Altermatt, P.P.; Heiser, G.; Aberle, A.G. [Photovoltaics Special Research Centre, University of NSW, 2052 Sydney (Australia)

    2001-01-01

    The commonly used band-gap narrowing (BGN) models for crystalline silicon do not describe heavily doped emitters with desirable precision. One of the reasons for this is that the applied BGN models were empirically derived from measurements assuming Boltzmann statistics. We apply a new BGN model derived by Schenk from quantum mechanical principles and demonstrate that carrier degeneracy and the new BGN model both substantially affect the electron-hole product within the emitter region. Simulated saturation current densities of heavily phosphorus-doped emitters, calculated with the new BGN model, are lower than results obtained with the widely used empirical BGN model of del Alamo.

  1. Ultra-compact broadband higher order-mode pass filter fabricated in a silicon waveguide for multimode photonics

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Ding, Yunhong; Frandsen, Lars Hagedorn

    2015-01-01

    An ultra-compact and broadband higher order-mode pass filter in a 1D photonic crystal silicon waveguide is proposed and experimentally demonstrated. The photonic crystal is designed for the lower order mode to work in the photonic band gap, while the higher order mode is located in the air band....... Consequently, light on the lower order mode is prohibited to pass through the filter, while light on a higher order mode can be converted to a Bloch mode in the photonic crystal and pass through the filter with low insertion loss. As an example, we fabricate a similar to 15-mu m-long first-order-mode pass...

  2. An ultra-small, low-power, all-optical flip-flop memory on a silicon chip

    DEFF Research Database (Denmark)

    Liu, Liu; Kumar, R.; Huybrechts, K.

    2010-01-01

    Ultra-small, low-power, all-optical switching and memory elements, such as all-optical flip-flops, as well as photonic integrated circuits of many such elements, are in great demand for all-optical signal buffering, switching and processing. Silicon-on-insulator is considered to be a promising......-flop working in a continuous-wave regime with an electrical power consumption of a few milliwatts, allowing switching in 60 ps with 1.8 fJ optical energy. The total power consumption and the device size are, to the best of our knowledge, the smallest reported to date at telecom wavelengths. This is also...

  3. Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

    KAUST Repository

    Onyegam, Emmanuel U.; Sarkar, Dabraj; Hilali, Mohamed M.; Saha, Sayan; Mathew, Leo; Rao, Rajesh A.; Smith, Ryan S.; Xu, Dewei; Jawarani, Dharmesh; Garcia, Ricardo; Ainom, Moses; Banerjee, Sanjay K.

    2014-01-01

    Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

  4. Congenital cheek teratoma with temporo-mandibular joint ankylosis managed with ultra-thin silicone sheet interpositional arthroplasty.

    Science.gov (United States)

    Bhatnagar, Ankur; Verma, Vinay Kumar; Purohit, Vishal

    2013-01-01

    Primary cheek teratomas are rare with joint ankylosis (TMJA). The fundamental aim in the treatment of TMJA is the successful surgical resection of ankylotic bone, prevention of recurrence, and aesthetic improvement by ensuring functional occlusion. Early treatment is necessary to promote proper growth and function of mandible and to facilitate the positive psychological development of child. Inter-positional arthroplasty with ultra-thin silicone sheet was performed. Advantages include short operative time, less foreign material in the joint space leading to negligible foreign body reactions and least chances of implant extrusion. Instead of excising a large bony segment, a thin silicone sheet was interposed and then sutured ensuring preservation of mandibular height. Aggressive post-operative physiotherapy with custom made dynamic jaw exerciser was used to prevent recurrence.

  5. Realization of dual-heterojunction solar cells on ultra-thin ∼25 μm, flexible silicon substrates

    KAUST Repository

    Onyegam, Emmanuel U.

    2014-04-14

    Silicon heterojunction (HJ) solar cells with different rear passivation and contact designs were fabricated on ∼ 25 μ m semiconductor-on-metal (SOM) exfoliated substrates. It was found that the performance of these cells is limited by recombination at the rear-surface. Employing the dual-HJ architecture resulted in the improvement of open-circuit voltage (Voc) from 605 mV (single-HJ) to 645 mV with no front side intrinsic amorphous silicon (i-layer) passivation. Addition of un-optimized front side i-layer passivation resulted in further enhancement in Voc to 662 mV. Pathways to achieving further improvement in the performance of HJ solar cells on ultra-thin SOM substrates are discussed. © 2014 AIP Publishing LLC.

  6. Effects of Cold Rolling Reduction and Initial Goss Grains Orientation on Texture Evolution and Magnetic Performance of Ultra-thin Grain-oriented Silicon Steel

    Directory of Open Access Journals (Sweden)

    LIANG Rui-yang

    2017-06-01

    Full Text Available The ultra-thin grain-oriented silicon steel strips with a thickness of 0.06-0.12mm were produced by one-step-rolling methods with different Goss-orientation of grain-oriented silicon steel sheets. The effect of cold rolling reduction and initial Goss-orientation of samples on texture evolution and magnetic performance of ultra-thin grain-oriented silicon steel strips was studied by EBSD. The result shows that with the increase of cold rolling reduction and decrease of strips thickness, the recrystallization texture is enhanced after annealing.When the cold rolling reduction is 70%,RD//〈001〉 recrystallization texture is the sharpest, and the magnetic performance is the best. The higher degree of Goss orientation in initial sample is, the better magnetic performance of ultra-thin grain-oriented silicon steel.Therefore, for producing an ultra-thin grain-oriented silicon steel with high performance, a material with a concentrated orientation of Goss grains can be used.

  7. Power and polarization dependences of ultra-narrow electromagnetically induced absorption (EIA) spectra of 85 Rb atoms in degenerate two-level system

    Science.gov (United States)

    Qureshi, Muhammad Mohsin; Rehman, Hafeez Ur; Noh, Heung-Ryoul; Kim, Jin-Tae

    2016-05-01

    We have investigated ultra-narrow EIA spectral features with respect to variations of polarizations and powers of pump laser beam in a degenerate two-level system of the transition of 85 Rb D2 transition line. Polarizations of the probe laser beam in two separate experiments were fixed at right circular and horizontal linear polarizations, respectively while the polarizations of the pump lasers were varied from initial polarizations same as the probe laser beams to orthogonal to probe polarizations. One homemade laser combined with AOMs was used to the pump and probe laser beams instead of two different lasers to overcome broad linewidths of the homemade lasers. Theoretically, probe absorption coefficients have been calculated from optical Bloch equations of the degenerate two level system prepared by a pump laser beam. In the case of the circular polarization, EIA signal was obtained as expected theoretically although both pump and probe beams have same polarization. The EIA signal become smaller as power increases and polarizations of the pump and probe beams were same. When the polarization of the pump beam was linear polarization, maximum EIA signal was obtained theoretically and experimentally. Experimental EIA spectral shapes with respect to variations of the pump beam polarization shows similar trends as the theoretical results.

  8. A novel ultra-low carbon grain oriented silicon steel produced by twin-roll strip casting

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yang, E-mail: wy069024019@163.com [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Zhang, Yuan-Xiang; Lu, Xiang; Fang, Feng; Xu, Yun-Bo; Cao, Guang-Ming; Li, Cheng-Gang [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China); Misra, R.D.K. [Laboratory for Excellence in Advanced Steel Research, Department of Metallurgical, Materials and Biomedical Engineering, University of Texas at El Paso, TX 79968 (United States); Wang, Guo-Dong [State Key Laboratory of Rolling and Automation, Northeastern University, Shenyang 110819 (China)

    2016-12-01

    A novel ultra-low carbon grain oriented silicon steel was successfully produced by strip casting and two-stage cold rolling method. The microstructure, texture and precipitate evolution under different first cold rolling reduction were investigated. It was shown that the as-cast strip was mainly composed of equiaxed grains and characterized by very weak Goss texture ({110}<001>) and λ-fiber (<001>//ND). The coarse sulfides of size ~100 nm were precipitated at grain boundaries during strip casting, while nitrides remained in solution in the as-cast strip and the fine AlN particles of size ~20–50 nm, which were used as grain growth inhibitors, were formed in intermediate annealed sheet after first cold rolling. In addition, the suitable Goss nuclei for secondary recrystallization were also formed during intermediate annealing, which is totally different from the conventional process that the Goss nuclei originated in the subsurface layer of the hot rolled sheet. Furthermore, the number of AlN inhibitors and the intensity of desirable Goss texture increased with increasing first cold rolling reduction. After secondary recrystallization annealing, very large grains of size ~10–40 mm were formed and the final magnetic induction, B{sub 8}, was as high as 1.9 T. - Highlights: • A novel chemical composition base on strip casting silicon steel was proposed. • The ultra-low carbon design could shorten the processing routes. • The novel composition and processes were beneficial to obtain more inhibitors. • The magnetic induction of grain oriented silicon steel was significantly improved.

  9. Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business of Innovation Research Phase I proposal seeks to investigate and prove the feasibility of developing highly efficient, ultra-lightweight SiC...

  10. Ultra-high-speed wavelength conversion in a silicon photonic chip

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2011-01-01

    We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

  11. Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jiahe; Yang, Deren [State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou (China)

    2009-07-01

    Internal gettering (IG) technology has been challenged by both the reduction of thermal budget during device fabrication and the enlargement of wafer diameter. Improving the properties of Czochralski (Cz) silicon wafers by intentional impurity doping, the so-called 'impurity engineering (IE)', is defined. Germanium has been found to be one of the important impurities for improving the internal gettering effect in Cz silicon wafer. In this paper, the investigations on IE involved with the conventional furnace anneal based denudation processing for germanium-doped Cz silicon wafer are reviewed. Meanwhile, the potential mechanisms of germanium effects for the IE of Cz silicon wafer are also interpreted based on the experimental facts. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Ultra-low reflection porous silicon nanowires for solar cell applications

    OpenAIRE

    Najar , Adel; Charrier , Joël; Pirasteh , Parastesh; Sougrat , R.

    2012-01-01

    International audience; High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measuremen...

  13. Ultra-compact Higher-Order-Mode Pass Filter in a Silicon Waveguide

    DEFF Research Database (Denmark)

    Guan, Xiaowei; Frandsen, Lars Hagedorn; Ding, Yunhong

    2015-01-01

    An 3.7 μm long higher-order-mode pass filter with an extinction ratio larger than 20 dB is demonstrated in a 1D corrugated silicon multimode waveguide......An 3.7 μm long higher-order-mode pass filter with an extinction ratio larger than 20 dB is demonstrated in a 1D corrugated silicon multimode waveguide...

  14. Ultra-sensitive and selective detection of mercury ion (Hg2+) using free-standing silicon nanowire sensors

    Science.gov (United States)

    Jin, Yan; Gao, Anran; Jin, Qinghui; Li, Tie; Wang, Yuelin; Zhao, Jianlong

    2018-04-01

    In this paper, ultra-sensitive and highly selective Hg2+ detection in aqueous solutions was studied by free-standing silicon nanowire (SiNW) sensors. The all-around surface of SiNW arrays was functionalized with (3-Mercaptopropyl)trimethoxysilane serving as Hg2+ sensitive layer. Due to effective electrostatic control provided by the free-standing structure, a detection limit as low as 1 ppt was obtained. A linear relationship (R 2 = 0.9838) between log(CHg2+ ) and a device current change from 1 ppt to 5 ppm was observed. Furthermore, the developed SiNW sensor exhibited great selectivity for Hg2+ over other heavy metal ions, including Cd2+. Given the extraordinary ability for real-time Hg2+ detection, the small size and low cost of the SiNW device, it is expected to be a potential candidate in field detection of environmentally toxic mercury.

  15. Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

    International Nuclear Information System (INIS)

    Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

    2016-01-01

    Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

  16. Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Ma, Zhongquan, E-mail: zqma@shu.edu.cn [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Instrumental Analysis & Research Center, Shanghai University, Shanghai 200444 (China)

    2016-12-01

    Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

  17. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  18. Ultra-low reflection porous silicon nanowires for solar cell applications

    KAUST Repository

    Najar, Adel; Charrier, Joë l; Pirasteh, Parastesh; Sougrat, Rachid

    2012-01-01

    % reflectivity of the starting silicon wafer drops to 0.1% recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix

  19. Measurements of timing resolution of ultra-fast silicon detectors with the SAMPIC waveform digitizer

    Energy Technology Data Exchange (ETDEWEB)

    Breton, D. [CNRS/IN2P3/LAL Orsay, Université Paris-Saclay, F-91898 Orsay (France); De Cacqueray, V.; Delagnes, E. [IRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette (France); Grabas, H. [Santa Cruz Institute for Particle Physics UC Santa Cruz, CA 95064 (United States); Maalmi, J. [CNRS/IN2P3/LAL Orsay, Université Paris-Saclay, F-91898 Orsay (France); Minafra, N. [Dipartimento Interateneo di Fisica di Bari, Bari (Italy); CERN, Geneva (Switzerland); Royon, C. [University of Kansas, Lawrence (United States); Saimpert, M., E-mail: matthias.saimpert@cern.ch [IRFU, CEA, Université Paris-Saclay, F-91191 Gif-sur-Yvette (France)

    2016-11-01

    The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a waveform digitizer to perform accurate timing measurements. Thanks to the sampled signals, smart algorithms making best use of the pulse shape can be used to improve time resolution. A software framework has been developed to analyse the SAMPIC output data and extract timing information by using either a constant fraction discriminator or a fast cross-correlation algorithm. SAMPIC timing capabilities together with the software framework have been tested using pulses generated by a signal generator or by a silicon detector illuminated by a pulsed infrared laser. Under these ideal experimental conditions, the SAMPIC chip has proven to be capable of timing resolutions down to 4 ps with synthesized signals and 40 ps with silicon detector signals.

  20. Measurements of timing resolution of ultra-fast silicon detectors with the SAMPIC WTDC

    CERN Document Server

    Breton, Dominique

    2016-11-01

    The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter (TDC) and the versatility of a waveform digitizer to perform accurate timing measurements. Thanks to the sampled signals, smart algorithms making best use of the pulse shape can be used to maximize time resolution. A software framework has been developed to analyse the SAMPIC output data and extract timing information by using either a constant fraction discriminator or a fast cross-correlation algorithm. SAMPIC timing capabilities together with the software framework have been tested using Gaussian signals generated by a signal generator or by silicon detectors pulsed with an infra-red laser. Under these ideal experimental conditions, the SAMPIC chip has proven to be capable of timing resolutions down to 4 (40) ps with synthesized (silicon detector) signals.

  1. Ultra-low reflection porous silicon nanowires for solar cell applications

    KAUST Repository

    Najar, Adel

    2012-01-01

    High density vertically aligned Porous Silicon NanoWires (PSiNWs) were fabricated on silicon substrate using metal assisted chemical etching process. A linear dependency of nanowire length to the etching time was obtained and the change in the growth rate of PSiNWs by increasing etching durations was shown. A typical 2D bright-field TEM image used for volume reconstruction of the sample shows the pores size varying from 10 to 50 nm. Furthermore, reflectivity measurements show that the 35% reflectivity of the starting silicon wafer drops to 0.1% recorded for more than 10 μm long PSiNWs. Models based on cone shape of nanowires located in a circular and rectangular bases were used to calculate the reflectance employing the Transfert Matrix Formalism (TMF) of the PSiNWs layer. Using TMF, the Bruggeman model was used to calculate the refractive index of PSiNWs layer. The calculated reflectance using circular cone shape fits better the measured reflectance for PSiNWs. The remarkable decrease in optical reflectivity indicates that PSiNWs is a good antireflective layer and have a great potential to be utilized in radial or coaxial p-n heterojunction solar cells that could provide orthogonal photon absorption and enhanced carrier collection. ©2012 Optical Society of America.

  2. Hadron-therapy beam monitoring: Towards a new generation of ultra-thin p-type silicon strip detectors

    International Nuclear Information System (INIS)

    Bouterfa, M.; Aouadi, K.; Bertrand, D.; Olbrechts, B.; Delamare, R.; Raskin, J. P.; Gil, E. C.; Flandre, D.

    2011-01-01

    Hadron-therapy has gained increasing interest for cancer treatment especially within the last decade. System commissioning and quality assurance procedures impose to monitor the particle beam using 2D dose measurements. Nowadays, several monitoring systems exist for hadron-therapy but all show a relatively high influence on the beam properties: indeed, most devices consist of several layers of materials that degrade the beam through scattering and energy losses. For precise treatment purposes, ultra-thin silicon strip detectors are investigated in order to reduce this beam scattering. We assess the beam size increase provoked by the Multiple Coulomb Scattering when passing through Si, to derive a target thickness. Monte-Carlo based simulations show a characteristic scattering opening angle lower than 1 mrad for thicknesses below 20 μm. We then evaluated the fabrication process feasibility. We successfully thinned down silicon wafers to thicknesses lower than 10 μm over areas of several cm 2 . Strip detectors are presently being processed and they will tentatively be thinned down to 20 μm. Moreover, two-dimensional TCAD simulations were carried out to investigate the beam detector performances on p-type Si substrates. Additionally, thick and thin substrates have been compared thanks to electrical simulations. Reducing the pitch between the strips increases breakdown voltage, whereas leakage current is quite insensitive to strips geometrical configuration. The samples are to be characterized as soon as possible in one of the IBA hadron-therapy facilities. For hadron-therapy, this would represent a considerable step forward in terms of treatment precision. (authors)

  3. High rate particle tracking and ultra-fast timing with a thin hybrid silicon pixel detector

    Science.gov (United States)

    Fiorini, M.; Aglieri Rinella, G.; Carassiti, V.; Ceccucci, A.; Cortina Gil, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Marchetto, F.; Mapelli, A.; Martin, E.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Perktold, L.; Petagna, P.; Petrucci, F.; Poltorak, K.; Riedler, P.; Rivetti, A.; Statera, M.; Velghe, B.

    2013-08-01

    The Gigatracker (GTK) is a hybrid silicon pixel detector designed for the NA62 experiment at CERN. The beam spectrometer, made of three GTK stations, has to sustain high and non-uniform particle rate (∼ 1 GHz in total) and measure momentum and angles of each beam track with a combined time resolution of 150 ps. In order to reduce multiple scattering and hadronic interactions of beam particles, the material budget of a single GTK station has been fixed to 0.5% X0. The expected fluence for 100 days of running is 2 ×1014 1 MeV neq /cm2, comparable to the one foreseen in the inner trackers of LHC detectors during 10 years of operation. To comply with these requirements, an efficient and very low-mass (< 0.15 %X0) cooling system is being constructed, using a novel microchannel cooling silicon plate. Two complementary read-out architectures have been produced as small-scale prototypes: one is based on a Time-over-Threshold circuit followed by a TDC shared by a group of pixels, while the other makes use of a constant-fraction discriminator followed by an on-pixel TDC. The read-out ASICs are produced in 130 nm IBM CMOS technology and will be thinned down to 100 μm or less. An overview of the Gigatracker detector system will be presented. Experimental results from laboratory and beam tests of prototype bump-bonded assemblies will be described as well. These results show a time resolution of about 170 ps for single hits from minimum ionizing particles, using 200 μm thick silicon sensors.

  4. Electrical activation and spin coherence of ultra low doseantimony implants in silicon

    Energy Technology Data Exchange (ETDEWEB)

    Schenkel, T.; Tyryshkin, A.M.; de Sousa, R.; Whaley, K.B.; Bokor,J.; Liddle, J.A.; Persaud, A.; Shangkuan, J.; Chakarov, I.; Lyon, S.A.

    2005-07-13

    We implanted ultra low doses (0.2 to 2 x 10{sup 11} cm{sup -2}) of Sb ions into isotopically enriched {sup 28}Si, and probed electrical activation and electron spin relaxation after rapid thermal annealing. Strong segregation of dopants towards both Si{sub 3}N{sub 4} and SiO{sub 2} interfaces limits electrical activation. Pulsed Electron Spin Resonance shows that spin echo decay is sensitive to the dopant profiles, and the interface quality. A spin decoherence time, T{sub 2}, of 1.5 ms is found for profiles peaking 25 nm below a Si/SiO{sub 2} interface, increasing to 2.1 ms when the surface is passivated with hydrogen. These measurements provide benchmark data for the development of devices in which quantum information is encoded in donor electron spins.

  5. Silicon-Based Asymmetric Add-Drop Microring Resonators with Ultra-Large Through-Port Extinctions

    International Nuclear Information System (INIS)

    Xi, Xiao; Yun-Tao, Li; Yu-De, Yu; Jin-Zhong, Yu

    2010-01-01

    We theoretically simulate and experimentally demonstrate ultra-large through-port extinctions in silicon-based asymmetrically-coupled add-drop microring resonators (MRs). Through-port responses in an add-drop MR are analyzed by simulations and large extinctions are found when the MR is near-critically coupled. Accurate fabrication techniques are applied in producing a series of 20 μm-radii add-drop microrings with drop-side gap-widths in slight differences. A through-port extinction of about 42.7 dB is measured in an MR with through- and drop-side gap-width to be respectively 280nm and 295nm. The large extinction suggests about a 20.5 dB improvement from the symmetrical add-drop MR of the same size and the through-side gap-width. The experimental results are finally compared with the post-fabrication simulations, which show a gap-width tolerance of > 30 am for the through-port extinction enhancement

  6. Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon

    Directory of Open Access Journals (Sweden)

    Nazek El-Atab

    2013-10-01

    Full Text Available A thin-film ZnO(n/Si(p+ heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM AC-in-Air method in addition to conductive AFM (CAFM were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON ∼3.5 V. The measured breakdown voltage (VBR and electric field (EBR for this diode are 5.4 V and 3.86 MV/cm, respectively.

  7. Operando formation of an ultra-low friction boundary film from synthetic magnesium silicon hydroxide additive

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Qiuying; Rudenko, Pavlo; Miller, Dean J.; Wen, Jianguo; Berman, Diana; Zhang, Yuepeng; Arey, Bruce; Zhu, Zihua; Erdemir, Ali

    2017-06-01

    The paper reports the operando and self-healing formation of DLC films at sliding contact surfaces by the addition of synthetic magnesium silicon hydroxide (MSH) nanoparticles to base oil. The formation of such films leads to a reduction of the coefficient of friction by nearly an order of magnitude and substantially reduces wear losses. The ultralow friction layer characterized by transmission electron microscope (TEM), electron energy loss spectroscopy (EELS), and Raman spectroscopy consists of amorphous DLC containing SiOx that forms in a continuous and self-repairing manner during operation. This environmentally benign and simple approach offers promise for significant advances in lubrication and reduced energy losses in engines and other mechanical systems.

  8. Preparation and characterization of ultra-thin amphiphobic coatings on silicon wafers

    International Nuclear Information System (INIS)

    Mou, Chun-Yueh; Yuan, Wei-Li; Shih, Chih-Hsin

    2013-01-01

    Fluorine-based amphiphobic coatings have been widely used in commercial domestic utensils and textiles to repel water and oil contaminants. However, few reports from the literature survey have discussed the effects on amphiphobicity of the nano- to micro-scale surface features of such a coating. In this research thin amphiphobic epoxy coatings based on a mixture of bisphenol A diglycidyl ether, tetraethylorthosilicate (TEOS), and a particular alkoxy silane with fluorinated side chains (F-silane) are deposited on silicon wafers. Film amphiphobicity is characterized by the measurement of water and oil contact angles of the coating. Film morphology is revealed in the scanned images using atomic force microscopy. The deposited films free of F-silane are about 10 nm thick. When a small amount of F-silane was firstly added, the water and oil contact angles of the deposited films jumped up to 107° and 69° respectively and then flattened out with increased F-silane. Water droplets gave an average plateau contact angle about 110°, while vegetable oil ones, 40°. It was noted that there is a dramatic decrease in the lyophobicity causing a reduction in contact angles. However, surface lyophobicity also depends on sub-microscopic surface structures. In addition, by increasing TEOS, it was shown that the formed silica sols or granules were helpful in enhancing the mechanical strength along with retaining the lyophobicity of the film. - Highlights: • Epoxy ultrathin films about 10 nm thick deposited on silicon wafer. • Nominal fluorinated silane added to epoxy coatings for amphiphobicity. • Surface lyophobicity retained by sub-micrometer granules in ultrathin coatings. • Film hardness improved by adding tetraethylorthosilicate

  9. Preparation and characterization of ultra-thin amphiphobic coatings on silicon wafers

    Energy Technology Data Exchange (ETDEWEB)

    Mou, Chun-Yueh, E-mail: cymou165@gmail.com; Yuan, Wei-Li; Shih, Chih-Hsin

    2013-06-30

    Fluorine-based amphiphobic coatings have been widely used in commercial domestic utensils and textiles to repel water and oil contaminants. However, few reports from the literature survey have discussed the effects on amphiphobicity of the nano- to micro-scale surface features of such a coating. In this research thin amphiphobic epoxy coatings based on a mixture of bisphenol A diglycidyl ether, tetraethylorthosilicate (TEOS), and a particular alkoxy silane with fluorinated side chains (F-silane) are deposited on silicon wafers. Film amphiphobicity is characterized by the measurement of water and oil contact angles of the coating. Film morphology is revealed in the scanned images using atomic force microscopy. The deposited films free of F-silane are about 10 nm thick. When a small amount of F-silane was firstly added, the water and oil contact angles of the deposited films jumped up to 107° and 69° respectively and then flattened out with increased F-silane. Water droplets gave an average plateau contact angle about 110°, while vegetable oil ones, 40°. It was noted that there is a dramatic decrease in the lyophobicity causing a reduction in contact angles. However, surface lyophobicity also depends on sub-microscopic surface structures. In addition, by increasing TEOS, it was shown that the formed silica sols or granules were helpful in enhancing the mechanical strength along with retaining the lyophobicity of the film. - Highlights: • Epoxy ultrathin films about 10 nm thick deposited on silicon wafer. • Nominal fluorinated silane added to epoxy coatings for amphiphobicity. • Surface lyophobicity retained by sub-micrometer granules in ultrathin coatings. • Film hardness improved by adding tetraethylorthosilicate.

  10. Microstructure and lubricating property of ultra-fast laser pulse textured silicon carbide seals

    Science.gov (United States)

    Chen, Chien-Yu; Chung, Chung-Jen; Wu, Bo-Hsiung; Li, Wang-Long; Chien, Chih-Wei; Wu, Ping-Han; Cheng, Chung-Wei

    2012-05-01

    Most previous studies have employed surface patterning to improve the performance of lubrication systems. However, few have experimentally analyzed improved effects on friction reduction in SiC mechanical seals by ultra-fast laser pulse texturing. This work applies surface texturing on a non-contact mechanical seal and analyzes the characteristics of the resultant surface morphology. A femtosecond laser system is employed to fabricate micro/nanostructures on the SiC mechanical seal, and generates microscale-depth stripes and induces nanostructures on the seal surface. This work examines the morphology and cross section of the SiC nanostructures that correspond to the different scanning speeds of the laser pulse. Results show that varying the scanning speed enables the application of nanostructures of different amplitudes and widths on the surface of the seal. The friction coefficient of the introduced SiC full-textured seal is about 20% smaller than that of a conventional SiC mechanical seal. Hence, femtosecond laser texturing is effective and enables direct fabrication of the surface micro/nanostructures of SiC seals. This technique also serves as a potential approach to lubricating applications.

  11. Microstructure and lubricating property of ultra-fast laser pulse textured silicon carbide seals

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Chien-Yu.; Li, Wang-Long [National Cheng Kung University, Department of Materials Science and Engineering, Tainan, Taiwan (China); Chung, Chung-Jen; Wu, Bo-Hsiung [National Cheng Kung University, Center for Micro/Nano Science and Technology, Tainan, Taiwan (China); Chien, Chih-Wei; Wu, Ping-Han; Cheng, Chung-Wei [ITRI South, Industrial Technology, Research Institute, Laser Application Technology Center, Tainan, Taiwan (China)

    2012-05-15

    Most previous studies have employed surface patterning to improve the performance of lubrication systems. However, few have experimentally analyzed improved effects on friction reduction in SiC mechanical seals by ultra-fast laser pulse texturing. This work applies surface texturing on a non-contact mechanical seal and analyzes the characteristics of the resultant surface morphology. A femtosecond laser system is employed to fabricate micro/nanostructures on the SiC mechanical seal, and generates microscale-depth stripes and induces nanostructures on the seal surface. This work examines the morphology and cross section of the SiC nanostructures that correspond to the different scanning speeds of the laser pulse. Results show that varying the scanning speed enables the application of nanostructures of different amplitudes and widths on the surface of the seal. The friction coefficient of the introduced SiC full-textured seal is about 20% smaller than that of a conventional SiC mechanical seal. Hence, femtosecond laser texturing is effective and enables direct fabrication of the surface micro/nanostructures of SiC seals. This technique also serves as a potential approach to lubricating applications. (orig.)

  12. Silicon anode materials with ultra-low resistivity from the inside out for lithium ion batteries

    Science.gov (United States)

    Xu, Guojun; Jin, Chenxin; Liu, Liekai; Lan, Yu; Yue, Zhihao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Zhou, Lang

    2017-12-01

    Broken silicon (Si) wafers with electrical resistivity of 1 and 0.001 Ω cm were respectively ball-milled to Si particles with median diameters of less than 1 μm. Both these two types of Si particles were deposited with silver (Ag) nanoparticles by self-selective electroless deposition method. 1-Ω cm-Si particles, 0.001-Ω cm-Si particles, Ag-deposited 1-Ω cm-Si particles and Ag-deposited 0.001-Ω cm-Si particles were, respectively, mixed with graphite particles in weight ratio of 1:9 to form four types of Si-C anode materials and then they were assembled into coin cells. The experimental results indicate that the Ag-deposited 0.001-Ω cm-Si sample shows the higher capacity, better rate and cycle performance than other three samples, due to the high conductivity of Ag-deposited 0.001-Ω cm-Si sample from the inside out. At the current density of 750 mA g-1, the discharge capacity gap of Ag-deposited 0.001-Ω cm-Si sample and 0.001-Ω cm-Si sample is as high as 141.7 mA h g-1, which is almost equal to the discharge capacity of the latter. Besides, the discharge capacity retention ratio of Ag-deposited 0.001-Ω cm-Si sample after 50 cycles is 70%, which is 23.5% higher than that of 0.001-Ω cm-Si sample.

  13. Silicide/Silicon Heterointerfaces, Reaction Kinetics and Ultra-short Channel Devices

    Science.gov (United States)

    Tang, Wei

    Nickel silicide is one of the electrical contact materials widely used on very large scale integration (VLSI) of Si devices in microelectronic industry. This is because the silicide/silicon interface can be formed in a highly controlled manner to ensure reproducibility of optimal structural and electrical properties of the metal-Si contacts. These advantages can be inherited to Si nanowire (NW) field-effect transistors (FET) device. Due to the technological importance of nickel silicides, fundamental materials science of nickel silicides formation (Ni-Si reaction), especially in nanoscale, has raised wide interest and stimulate new insights and understandings. In this dissertation, in-situ transmission electron microscopy (TEM) in combination with FET device characterization will be demonstrated as useful tools in nano-device fabrication as well as in gaining insights into the process of nickel silicide formation. The shortest transistor channel length (17 nm) fabricated on a vapor-liquid-solid (VLS) grown silicon nanowire (NW) has been demonstrated by controlled reaction with Ni leads on an in-situ transmission electron microscope (TEM) heating stage at a moderate temperature of 400 ºC. NiSi2 is the leading phase, and the silicide-silicon interface is an atomically sharp type-A interface. At such channel lengths, high maximum on-currents of 890 (microA/microm) and a maximum transconductance of 430 (microS/microm) were obtained, which pushes forward the performance of bottom-up Si NW Schottky barrier field-effect transistors (SB-FETs). Through accurate control over the silicidation reaction, we provide a systematic study of channel length dependent carrier transport in a large number of SB-FETs with channel lengths in the range of (17 nm -- 3.6 microm). Our device results corroborate with our transport simulations and reveal a characteristic type of short channel effects in SB-FETs, both in on- and off-state, which is different from that in conventional MOSFETs

  14. The fabrication of a double-layer atom chip with through silicon vias for an ultra-high-vacuum cell

    International Nuclear Information System (INIS)

    Chuang, Ho-Chiao; Lin, Yun-Siang; Lin, Yu-Hsin; Huang, Chi-Sheng

    2014-01-01

    This study presents a double-layer atom chip that provides users with increased diversity in the design of the wire patterns and flexibility in the design of the magnetic field. It is more convenient for use in atomic physics experiments. A negative photoresist, SU-8, was used as the insulating layer between the upper and bottom copper wires. The electrical measurement results show that the upper and bottom wires with a width of 100 µm can sustain a 6 A current without burnout. Another focus of this study is the double-layer atom chips integrated with the through silicon via (TSV) technique, and anodically bonded to a Pyrex glass cell, which makes it a desired vacuum chamber for atomic physics experiments. Thus, the bonded glass cell not only significantly reduces the overall size of the ultra-high-vacuum (UHV) chamber but also conducts the high current from the backside to the front side of the atom chip via the TSV under UHV (9.5 × 10 −10  Torr). The TSVs with a diameter of 70 µm were etched through by the inductively coupled plasma ion etching and filled by the bottom-up copper electroplating method. During the anodic bonding process, the electroplated copper wires and TSVs on atom chips also need to pass the examination of the required bonding temperature of 250 °C, under an applied voltage of 1000 V. Finally, the UHV test of the double-layer atom chips with TSVs at room temperature can be reached at 9.5 × 10 −10  Torr, thus satisfying the requirements of atomic physics experiments under an UHV environment. (paper)

  15. Design of a CMOS readout circuit on ultra-thin flexible silicon chip for printed strain gauges

    Directory of Open Access Journals (Sweden)

    M. Elsobky

    2017-09-01

    Full Text Available Flexible electronics represents an emerging technology with features enabling several new applications such as wearable electronics and bendable displays. Precise and high-performance sensors readout chips are crucial for high quality flexible electronic products. In this work, the design of a CMOS readout circuit for an array of printed strain gauges is presented. The ultra-thin readout chip and the printed sensors are combined on a thin Benzocyclobutene/Polyimide (BCB/PI substrate to form a Hybrid System-in-Foil (HySiF, which is used as an electronic skin for robotic applications. Each strain gauge utilizes a Wheatstone bridge circuit, where four Aerosol Jet® printed meander-shaped resistors form a full-bridge topology. The readout chip amplifies the output voltage difference (about 5 mV full-scale swing of the strain gauge. One challenge during the sensor interface circuit design is to compensate for the relatively large dc offset (about 30 mV at 1 mA in the bridge output voltage so that the amplified signal span matches the input range of an analog-to-digital converter (ADC. The circuit design uses the 0. 5 µm mixed-signal GATEFORESTTM technology. In order to achieve the mechanical flexibility, the chip fabrication is based on either back thinned wafers or the ChipFilmTM technology, which enables the manufacturing of silicon chips with a thickness of about 20 µm. The implemented readout chip uses a supply of 5 V and includes a 5-bit digital-to-analog converter (DAC, a differential difference amplifier (DDA, and a 10-bit successive approximation register (SAR ADC. The circuit is simulated across process, supply and temperature corners and the simulation results indicate excellent performance in terms of circuit stability and linearity.

  16. Performance of ultra-small silicon photomultiplier array with active area of 0.12 mm×0.12 mm

    Energy Technology Data Exchange (ETDEWEB)

    Yue, Wang; Zongde, Chen; Chenhui, Li; Ran, He; Shenyuan, Wang; Baicheng, Li; Ruiheng, Wang; Kun, Liang, E-mail: lk@bnu.edu.cn; Ru, Yang; Dejun, Han

    2015-07-01

    We report the performance of an ultra-small silicon photomultiplier (SiPM) line array with 7 elements of 0.12×0.12 mm{sup 2} in active area, 0.2 mm in pitch and 120 micro cells in one element. The device features an epitaxial bulk quenching resistor concept, demonstrated high geometrical fill factor of 41% and photon detection efficiency (PDE) of 25.4% in the wavelength region between 430 nm and 480 nm while retaining high micro cell density around 10 000 mm{sup −2} and ~3 ns FWHM of dark pulses width; it also demonstrated dark count rate of less than 28.7 kHz, optical crosstalk of the order of 2% to 4%, and excellent photon number discrimination. A 0.15 mm×1.6 mm×1.6 mm lutetium yttrium oxyorthosilicate (LYSO) crystal, corresponding to the width, length and height respectively, was successfully coupled to the 1×7 SiPM array for possible ultra-highly resolved positron emission tomography (PET) applications. This novel type of device has advantages particularly for small active area since the performances, such as PDE and response speed is one of the best among SiPMs with similarly high density of micro cells. It may pave a way for this type of SiPM as a promising pixel position sensitive device in imaging sensor applications. - Highlights: • The ultra-small SiPM line array with active area of 0.12 mm×0.12 mm was presented. • The ultra-small SiPM employs the bulk silicon structure as quenching resistor. • A considerable dynamic range and PDE over 25.4% @ 430 nm to 480 nm were characterized.

  17. N-type nano-silicon powders with ultra-low electrical resistivity as anode materials in lithium ion batteries

    Science.gov (United States)

    Yue, Zhihao; Zhou, Lang; Jin, Chenxin; Xu, Guojun; Liu, Liekai; Tang, Hao; Li, Xiaomin; Sun, Fugen; Huang, Haibin; Yuan, Jiren

    2017-06-01

    N-type silicon wafers with electrical resistivity of 0.001 Ω cm were ball-milled to powders and part of them was further mechanically crushed by sand-milling to smaller particles of nano-size. Both the sand-milled and ball-milled silicon powders were, respectively, mixed with graphite powder (silicon:graphite = 5:95, weight ratio) as anode materials for lithium ion batteries. Electrochemical measurements, including cycle and rate tests, present that anode using sand-milled silicon powder performed much better. The first discharge capacity of sand-milled silicon anode is 549.7 mAh/g and it is still up to 420.4 mAh/g after 100 cycles. Besides, the D50 of sand-milled silicon powder shows ten times smaller in particle size than that of ball-milled silicon powder, and they are 276 nm and 2.6 μm, respectively. In addition, there exist some amorphous silicon components in the sand-milled silicon powder excepting the multi-crystalline silicon, which is very different from the ball-milled silicon powder made up of multi-crystalline silicon only.

  18. Silicon on ferroelectic insulator field effect transistor (SOF-FET) a new device for the next generation ultra low power circuits

    Science.gov (United States)

    Es-Sakhi, Azzedin D.

    Field effect transistors (FETs) are the foundation for all electronic circuits and processors. These devices have progressed massively to touch its final steps in sub-nanometer level. Left and right proposals are coming to rescue this progress. Emerging nano-electronic devices (resonant tunneling devices, single-atom transistors, spin devices, Heterojunction Transistors rapid flux quantum devices, carbon nanotubes, and nanowire devices) took a vast share of current scientific research. Non-Si electronic materials like III-V heterostructure, ferroelectric, carbon nanotubes (CNTs), and other nanowire based designs are in developing stage to become the core technology of non-classical CMOS structures. FinFET present the current feasible commercial nanotechnology. The scalability and low power dissipation of this device allowed for an extension of silicon based devices. High short channel effect (SCE) immunity presents its major advantage. Multi-gate structure comes to light to improve the gate electrostatic over the channel. The new structure shows a higher performance that made it the first candidate to substitute the conventional MOSFET. The device also shows a future scalability to continue Moor's Law. Furthermore, the device is compatible with silicon fabrication process. Moreover, the ultra-low-power (ULP) design required a subthreshold slope lower than the thermionic-emission limit of 60mV/ decade (KT/q). This value was unbreakable by the new structure (SOI-FinFET). On the other hand most of the previews proposals show the ability to go beyond this limit. However, those pre-mentioned schemes have publicized a very complicated physics, design difficulties, and process non-compatibility. The objective of this research is to discuss various emerging nano-devices proposed for ultra-low-power designs and their possibilities to replace the silicon devices as the core technology in the future integrated circuit. This thesis proposes a novel design that exploits the

  19. Coherent and non coherent atom optics experiment with an ultra-narrow beam of metastable rare gas atoms; Experiences d'optique atomique coherente ou non avec un jet superfin d'atomes metastables de gaz rares

    Energy Technology Data Exchange (ETDEWEB)

    Grucker, J

    2007-12-15

    In this thesis, we present a new type of atomic source: an ultra-narrow beam of metastable atoms produced by resonant metastability exchange inside a supersonic beam of rare gas atoms. We used the coherence properties of this beam to observe the diffraction of metastable helium, argon and neon atoms by a nano-transmission grating and by micro-reflection-gratings. Then, we evidenced transitions between Zeeman sublevels of neon metastable {sup 3}P{sub 2} state due to the quadrupolar part of Van der Waals potential. After we showed experimental proofs of the observation of this phenomenon, we calculated the transition probabilities in the Landau - Zener model. We discussed the interest of Van der Waals - Zeeman transitions for atom interferometry. Last, we described the Zeeman cooling of the supersonic metastable argon beam ({sup 3}P{sub 2}). We have succeeded in slowing down atoms to speeds below 100 m/s. We gave experimental details and showed the first time-of-flight measurements of slowed atoms.

  20. Porous Silicon Covered with Silver Nanoparticles as Surface-Enhanced Raman Scattering (SERS) Substrate for Ultra-Low Concentration Detection.

    Science.gov (United States)

    Kosović, Marin; Balarin, Maja; Ivanda, Mile; Đerek, Vedran; Marciuš, Marijan; Ristić, Mira; Gamulin, Ozren

    2015-12-01

    Microporous and macro-mesoporous silicon templates for surface-enhanced Raman scattering (SERS) substrates were produced by anodization of low doped p-type silicon wafers. By immersion plating in AgNO3, the templates were covered with silver metallic film consisting of different silver nanostructures. Scanning electron microscopy (SEM) micrographs of these SERS substrates showed diverse morphology with significant difference in an average size and size distribution of silver nanoparticles. Ultraviolet-visible-near-infrared (UV-Vis-NIR) reflection spectroscopy showed plasmonic absorption at 398 and 469 nm, which is in accordance with the SEM findings. The activity of the SERS substrates was tested using rhodamine 6G (R6G) dye molecules and 514.5 nm laser excitation. Contrary to the microporous silicon template, the SERS substrate prepared from macro-mesoporous silicon template showed significantly broader size distribution of irregular silver nanoparticles as well as localized surface plasmon resonance closer to excitation laser wavelength. Such silver morphology has high SERS sensitivity that enables ultralow concentration detection of R6G dye molecules up to 10(-15) M. To our knowledge, this is the lowest concentration detected of R6G dye molecules on porous silicon-based SERS substrates, which might even indicate possible single molecule detection.

  1. Realization of an ultra-compact polarization beam splitter using asymmetric MMI based on silicon nitride / silicon-on-insulator platform.

    Science.gov (United States)

    Sun, Xiao; Aitchison, J Stewart; Mojahedi, Mo

    2017-04-03

    We have experimentally demonstrated a compact polarization beam splitter (PBS) based on the silicon nitride/silicon-on-insulator platform using the recently proposed augmented-low-index-guiding (ALIG) waveguide structure. The two orthogonal polarizations are split in an asymmetric multimode interference (MMI) section, which was 1.6 μm wide and 4.8 μm long. The device works well over the entire C-band wavelength range and has a measured low insertion loss of less than 1 dB. The polarization extinction ratio at the Bar Port is approximately 17 dB and at the Cross Port is approximately 25 dB. The design of the device is robust and has a good fabrication tolerance.

  2. Microstructure and texture evolution of ultra-thin grain-oriented silicon steel sheet fabricated using strip casting and three-stage cold rolling method

    Energy Technology Data Exchange (ETDEWEB)

    Song, Hong-Yu; Liu, Hai-Tao, E-mail: liuht@ral.neu.edu.cn; Wang, Yin-Ping; Wang, Guo-Dong

    2017-03-15

    A 0.1 mm-thick grain-oriented silicon steel sheet was successfully produced using strip casting and three-stage cold rolling method. The microstructure, texture and inhibitor evolution during the processing was briefly analyzed. It was found that Goss texture was absent in the hot rolled sheet because of the lack of shear deformation. After normalizing, a large number of dispersed MnS precipitates with the size range of 15–90 nm were produced. During first cold rolling, dense shear bands were generated in the deformed ferrite grains, resulting in the intense Goss texture after first intermediate annealing. The microstructure was further refined and homogenized during the subsequent cold rolling and annealing processes. After primary recrystallization annealing, a homogeneous microstructure consisting of fine and equiaxed grains was produced while the associated texture was characterized by a strong γ-fiber texture. Finally, a complete secondary recrystallization microstructure consisting of entirely large Goss grains was produced. The magnetic induction B{sub 8} and iron loss P{sub 10/400} was 1.79 T and 6.9 W/kg, respectively. - Highlights: • Ultra-thin grain-oriented silicon steel was produced by strip casting process. • Microstructure, texture and inhibitor evolution was briefly investigated. • Goss texture was absent in primary recrystallization annealed sheet. • MnS precipitates with a size range of 15–90 nm formed after normalizing. • A complete secondary recrystallization microstructure was produced.

  3. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO{sub 2}/Si interfaces with low defect densities

    Energy Technology Data Exchange (ETDEWEB)

    Stegemann, Bert, E-mail: bert.stegemann@htw-berlin.de [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Gad, Karim M. [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Balamou, Patrice [HTW Berlin - University of Applied Sciences, 12459 Berlin (Germany); Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Sixtensson, Daniel [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany); Vössing, Daniel; Kasemann, Martin [University of Freiburg, Department of Microsystems Engineering - IMTEK, 79110 Freiburg (Germany); Angermann, Heike [Helmholtz Center Berlin for Materials and Energy (HZB), 12489 Berlin (Germany)

    2017-02-15

    Highlights: • Fabrication of ultrathin SiO{sub 2} tunnel layers on c-Si. • Correlation of electronic and chemical SiO{sub 2}/Si interface properties revealed by XPS/SPV. • Chemically abrupt SiO{sub 2}/Si interfaces generate less interface defect states considerable. - Abstract: Six advanced oxidation techniques were analyzed, evaluated and compared with respect to the preparation of high-quality ultra-thin oxide layers on crystalline silicon. The resulting electronic and chemical SiO{sub 2}/Si interface properties were determined by a combined x-ray photoemission (XPS) and surface photovoltage (SPV) investigation. Depending on the oxidation technique, chemically abrupt SiO{sub 2}/Si interfaces with low densities of interface states were fabricated on c-Si either at low temperatures, at short times, or in wet-chemical environment, resulting in each case in excellent interface passivation. Moreover, the beneficial effect of a subsequent forming gas annealing (FGA) step for the passivation of the SiO{sub 2}/Si interface of ultra-thin oxide layers has been proven. Chemically abrupt SiO{sub 2}/Si interfaces have been shown to generate less interface defect states.

  4. Optical performance of B-layer ultra-shallow-junction silicon photodiodes in the VUV spectral range

    NARCIS (Netherlands)

    Shi, L.; Sarubbi, F.; Nanver, L.K.; Kroth, U.; Gottwald, A.; Nihtianov, S.

    2010-01-01

    In recent work, a novel silicon-based photodiode technology was reported to be suitable for producing radiation detectors for 193 nm deep-ultraviolet light and for the extreme-ultraviolet (EUV) spectral range. The devices were developed and fabricated at the Delft Institute of Microsystems and

  5. Determination of ultra-trace contaminants on silicon wafer surfaces using TXRF. Present state of the art

    International Nuclear Information System (INIS)

    Pahlke, S.; Fabry, L.; Kotz, L.; Mantler, C.; Ehmann, T.

    2000-01-01

    Recently, TXRF became a standard, on-line inspection tool for controlling the cleanliness of polished Si wafers for semiconductor use now up to 300 diameter. Wafer makers strive for an all-over metallic cleanliness of 10 atoms x cm -2 . Therefore an analytical tools must cover LOD in a range 9 atoms x cm -2 or lower. The all-over cleanliness of the whole wafer surface can analyzed using VPD/TXRF. For this chemical wafer-pre-preparation under cleanroom conditions class 1 we have developed a full automatic 'Wafer Surface Preparation System' coupled with a new generation TXRF. We have also combined this system with other independent methods for Na, Al, anions and cations. Only the combination of automatic wafer handling systems, modem analytical tools, ultra-pure water, ULSI chemicals and special cleanroom conditions provides us a chance to achieve the present and the future demands for semiconductor industry. (author)

  6. Ultra-compact and wide-spectrum-range thermo-optic switch based on silicon coupled photonic crystal microcavities

    International Nuclear Information System (INIS)

    Zhang, Xingyu; Chung, Chi-Jui; Pan, Zeyu; Yan, Hai; Chakravarty, Swapnajit; Chen, Ray T.

    2015-01-01

    We design, fabricate, and experimentally demonstrate a compact thermo-optic gate switch comprising a 3.78 μm-long coupled L0-type photonic crystal microcavities on a silicon-on-insulator substrate. A nanohole is inserted in the center of each individual L0 photonic crystal microcavity. Coupling between identical microcavities gives rise to bonding and anti-bonding states of the coupled photonic molecules. The coupled photonic crystal microcavities are numerically simulated and experimentally verified with a 6 nm-wide flat-bottom resonance in its transmission spectrum, which enables wider operational spectrum range than microring resonators. An integrated micro-heater is in direct contact with the silicon core to efficiently drive the device. The thermo-optic switch is measured with an optical extinction ratio of 20 dB, an on-off switching power of 18.2 mW, a thermo-optic tuning efficiency of 0.63 nm/mW, a rise time of 14.8 μs, and a fall time of 18.5 μs. The measured on-chip loss on the transmission band is as low as 1 dB

  7. The role of the bimodal distribution of ultra-fine silicon phase and nano-scale V-phase (AlSi2Sc2) on spark plasma sintered hypereutectic Al–Si–Sc alloys

    International Nuclear Information System (INIS)

    Raghukiran, Nadimpalli; Kumar, Ravi

    2016-01-01

    Hypereutectic Al–Si and Al–Si–Sc alloys were spark plasma sintered from corresponding gas-atomized powders. The microstructures of the Al–Si and Al–Si–Sc alloys possessed remarkably refined silicon particles in the size range of 0.38–3.5 µm and 0.35–1.16 µm respectively in contrast to the silicon particles of size greater than 100 µm typically found in conventionally cast alloys. All the sintered alloys exhibited significant ductility of as high as 85% compressive strain without failure even with the presence of relatively higher weight fraction of the brittle silicon phase. Moreover, the Al–Si–Sc alloys have shown appreciable improvement in the compressive strength over their binary counterparts due to the presence of intermetallic compound AlSi 2 Sc 2 of size 10–20 nm distributed uniformly in the matrix of those alloys. The dry sliding pin-on-disc wear tests showed improvement in the wear performance of the sintered alloys with increase in silicon content in the alloys. Further, the Al–Si–Sc ternary alloys with relatively lesser silicon content exhibited appreciable improvement in the wear resistance over their binary counterparts. The Al–Si–Sc alloys with bimodal distribution of the strengthening phases consisting of ultra-fine (sub-micron size) silicon particles and the nano-scale AlSi 2 Sc 2 improved the strength and wear properties of the alloys while retaining significant amount of ductility.

  8. Electron-selective contacts via ultra-thin organic interface dipoles for silicon organic heterojunction solar cells

    Science.gov (United States)

    Reichel, Christian; Würfel, Uli; Winkler, Kristina; Schleiermacher, Hans-Frieder; Kohlstädt, Markus; Unmüssig, Moritz; Messmer, Christoph A.; Hermle, Martin; Glunz, Stefan W.

    2018-01-01

    In the last years, novel materials for the formation of electron-selective contacts on n-type crystalline silicon (c-Si) heterojunction solar cells were explored as an interfacial layer between the metal electrode and the c-Si wafer. Besides inorganic materials like transition metal oxides or alkali metal fluorides, also interfacial layers based on organic molecules with a permanent dipole moment are promising candidates to improve the contact properties. Here, the dipole effect plays an essential role in the modification of the interface and effective work function of the contact. The amino acids L-histidine, L-tryptophan, L-phenylalanine, glycine, and sarcosine, the nucleobase adenine, and the heterocycle 4-hydroxypyridine were investigated as dipole materials for an electron-selective contact on the back of p- and n-type c-Si with a metal electrode based on aluminum (Al). Furthermore, the effect of an added fluorosurfactant on the resulting contact properties was examined. The performance of n-type c-Si solar cells with a boron diffusion on the front was significantly increased when L-histidine and/or the fluorosurfactant was applied as a full-area back surface field. This improvement was attributed to the modification of the interface and the effective work function of the contact by the dipole material which was corroborated by numerical device simulations. For these solar cells, conversion efficiencies of 17.5% were obtained with open-circuit voltages (Voc) of 625 mV and fill factors of 76.3%, showing the potential of organic interface dipoles for silicon organic heterojunction solar cells due to their simple formation by solution processing and their low thermal budget requirements.

  9. Dopant redistribution and electrical activation in silicon following ultra-low energy boron implantation and excimer laser annealing

    International Nuclear Information System (INIS)

    Whelan, S.; La Magna, A.; Privitera, V.; Mannino, G.; Italia, M.; Bongiorno, C.; Fortunato, G.; Mariucci, L.

    2003-01-01

    Excimer laser annealing (ELA) of ultra-low-energy (ULE) B-ion implanted Si has been performed. High-resolution transmission electron microscopy has been used to assess the as-implanted damage and the crystal recovery following ELA. The electrical activation and redistribution of B in Si during ELA has been investigated as a function of the laser energy density (melted depth), the implant dose, and the number of laser pulses (melt time). The activated and retained dose has been evaluated with spreading resistance profiling and secondary ion mass spectrometry. A significant amount of the implanted dopant was lost from the sample during ELA. However, the dopant that was retained in crystal material was fully activated following rapid resolidification. At an atomic concentration below the thermodynamic limit, the activation efficiency (dose activated/dose implanted into Si material) was a constant for a fixed melt depth, irrespective of the dose implanted and hence the total activated dose was raised as the implant dose was increased. The electrical activation was increased for high laser energy density annealing when the dopant was redistributed over a deeper range

  10. The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

    International Nuclear Information System (INIS)

    Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.

    2011-01-01

    The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( 0 per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R and D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R and D program is overviewed and results from the prototype read-out chips test are presented.

  11. The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

    Science.gov (United States)

    Fiorini, M.; Carassiti, V.; Ceccucci, A.; Cortina, E.; Cotta Ramusino, A.; Dellacasa, G.; Garbolino, S.; Jarron, P.; Kaplon, J.; Kluge, A.; Mapelli, A.; Marchetto, F.; Martin, E.; Martoiu, S.; Mazza, G.; Morel, M.; Noy, M.; Nuessle, G.; Petrucci, F.; Riedler, P.; Aglieri Rinella, G.; Rivetti, A.; Tiuraniemi, S.

    2011-02-01

    The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly ( beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 μm CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction technique. The current status of the R&D program is overviewed and results from the prototype read-out chips test are presented.

  12. The Gigatracker: An ultra-fast and low-mass silicon pixel detector for the NA62 experiment

    CERN Document Server

    Fiorini, M; Morel, M; Petrucci, F; Marchetto, F; Garbolino, S; Cortina, E; Tiuraniemi, S; Ceccucci, A; Martin, E; Riedler, P; Martoiu, S; Ramusino, A C; Rinella, G A; Mapelli, A; Mazza, G; Noy, M; Jarron, P; Nuessle, G; Dellacasa, G; Kluge, A; Rivetti, A; Kaplon, J

    2011-01-01

    The Gigatracker is a hybrid silicon pixel detector developed to track the highly intense NA62 hadron beam with a time resolution of 150 ps (rms). The beam spectrometer of the experiment is composed of three Gigatracker stations installed in vacuum in order to precisely measure momentum, time and direction of every traversing particle. Precise tracking demands a very low mass of the detector assembly (<0.5\\% X(O) per station) in order to limit multiple scattering and beam hadronic interactions. The high rate and especially the high timing precision requirements are very demanding: two R\\&D options are ongoing and the corresponding prototype read-out chips have been recently designed and produced in 0.13 mu m CMOS technology. One solution makes use of a constant fraction discriminator and on-pixel analogue-based time-to-digital-converter (TDC); the other comprises a delay-locked loop based TDC placed at the end of each pixel column and a time-over-threshold discriminator with time-walk correction techniq...

  13. Ultra-low power high temperature and radiation hard complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) voltage reference.

    Science.gov (United States)

    Boufouss, El Hafed; Francis, Laurent A; Kilchytska, Valeriya; Gérard, Pierre; Simon, Pascal; Flandre, Denis

    2013-12-13

    This paper presents an ultra-low power CMOS voltage reference circuit which is robust under biomedical extreme conditions, such as high temperature and high total ionized dose (TID) radiation. To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of -40-200 °C and for different process corners. Robustness to radiation was simulated using custom model parameters including TID effects, such as mobilities and threshold voltages degradation. The proposed circuit has been tested up to high total radiation dose, i.e., 1 Mrad (Si) performed at three different temperatures (room temperature, 100 °C and 200 °C). The maximum drift of the reference voltage V(REF) depends on the considered temperature and on radiation dose; however, it remains lower than 10% of the mean value of 1.5 V. The typical power dissipation at 2.5 V supply voltage is about 20 μW at room temperature and only 75 μW at a high temperature of 200 °C. To understand the effects caused by the combination of high total ionizing dose and temperature on such voltage reference, the threshold voltages of the used SOI MOSFETs were extracted under different conditions. The evolution of V(REF) and power consumption with temperature and radiation dose can then be explained in terms of the different balance between fixed oxide charge and interface states build-up. The total occupied area including pad-ring is less than 0.09 mm2.

  14. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  15. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 October 2003--30 September 2004

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Narayanan, M.

    2005-03-01

    The major objectives of this program are to continue the advancement of BP Solar polycrystalline silicon manufacturing technology. The program includes work in the following areas: Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations; developing wire saws to slice 100- m-thick silicon wafers on 290- m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100- m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology; facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  16. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Annual Subcontract Report, 1 April 2002--30 September 2003 (Revised)

    Energy Technology Data Exchange (ETDEWEB)

    Wohlgemuth, J.; Shea, S. P.

    2004-04-01

    The goal of BP Solar's Crystalline PVMaT program is to improve the present polycrystalline silicon manufacturing facility to reduce cost, improve efficiency, and increase production capacity. Key components of the program are: increasing ingot size; improving ingot material quality; improving material handling; developing wire saws to slice 100 ..mu..m thick silicon wafers on 200 ..mu..m centers; developing equipment for demounting and subsequent handling of very thin silicon wafers; developing cell processes using 100 ..mu..m thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%; expanding existing in-line manufacturing data reporting systems to provide active process control; establishing a 50 MW (annual nominal capacity) green-field Mega plant factory model template based on this new thin polycrystalline silicon technology; and facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock.

  17. Thermal processing of strained silicon-on-insulator for atomically precise silicon device fabrication

    International Nuclear Information System (INIS)

    Lee, W.C.T.; Bishop, N.; Thompson, D.L.; Xue, K.; Scappucci, G.; Cederberg, J.G.; Gray, J.K.; Han, S.M.; Celler, G.K.; Carroll, M.S.; Simmons, M.Y.

    2013-01-01

    Highlights: ► Strained silicon-on-insulator (sSOI) samples were flash-annealed at high temperature under ultra-high vacuum conditions. ► The extend of surface strain relaxation depends on the annealing temperature with no strain relaxation observed below 1020 °C. ► A 2 × 1 reconstructed surface with low defect density can be achieved. ► The annealed sSOI surface shows enhanced step undulations due to the unique energetics caused by surface strain. - Abstract: We investigate the ability to reconstruct strained silicon-on-insulator (sSOI) substrates in ultra-high vacuum for use in atomic scale device fabrication. Characterisation of the starting sSOI substrate using μRaman shows an average tensile strain of 0.8%, with clear strain modulation in a crosshatch pattern across the surface. The surfaces were heated in ultra-high vacuum from temperatures of 900 °C to 1100 °C and subsequently imaged using scanning tunnelling microscopy (STM). The initial strain modulation on the surface is observed to promote silicon migration and the formation of crosshatched surface features whose height and pitch increases with increasing annealing temperature. STM images reveal alternating narrow straight S A steps and triangular wavy S B steps attributed to the spontaneous faceting of S B and preferential adatom attachment on S B under biaxial tensile strain. Raman spectroscopy shows that despite these high temperature anneals no strain relaxation of the substrate is observed up to temperatures of 1020 °C. Above 1100 °C, strain relaxation is evident but is confined to the surface.

  18. Ultra-thin chip technology and applications

    CERN Document Server

    2010-01-01

    Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.

  19. Probing the specific entropy produced in ultra-relativistic heavy-ion collisions with a silicon pixel multiplicity detector: a simulation study

    Czech Academy of Sciences Publication Activity Database

    Antinori, F.; Balada, A.; Barbera, R.; Staroba, Pavel; Závada, Petr

    2000-01-01

    Roč. 452, - (2000), s. 323-337 ISSN 0168-9002 Institutional research plan: CEZ:AV0Z1010920 Keywords : ultra-relativistic * heavy-ion collisions * nuclear matter * phase diagram * hadron gas * Quark Gluon Plasma * particle multiplicity * transverse momentum spectra Subject RIV: BF - Elementary Particles and High Energy Physics Impact factor: 0.964, year: 2000

  20. SiliPET: An ultra high resolution design of a small animal PET scanner based on double sided silicon strip detector stacks

    International Nuclear Information System (INIS)

    Zavattini, G.; Cesca, N.; Di Domenico, G.; Moretti, E.; Sabba, N.

    2006-01-01

    We investigated the capabilities of a small animal PET scanner, named SiliPET, based on four stacks of double sided silicon strips detectors. Each stack consists of 40 silicon detectors with dimension 60x60x1mm 3 . These are arranged to form a box 5x5x6cm 3 with minor sides opened; the box represents the maximal FOV of the scanner. The performance parameters of SiliPET scanner have been estimated, giving an intrinsic spatial resolution of 0.52mm and a sensitivity of 5.1% at the center of the system

  1. GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap

    Science.gov (United States)

    Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid

    2018-03-01

    We report on extremely low off-state leakage current in AlGaN/GaN-on-silicon metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs) up to a high blocking voltage. Remarkably low off-state gate and drain leakage currents below 1 µA/mm up to 3 kV have been achieved owing to the use of a thick in situ SiN gate dielectric under the gate, and a local Si substrate removal technique combined with a cost effective 15-µm-thick AlN dielectric layer followed by a Cu deposition. This result establishes a manufacturable state-of-the-art high-voltage GaN-on-silicon power transistors while maintaining a low specific on-resistance of approximately 10 mΩ·cm2.

  2. Narrow dibaryon resonances

    International Nuclear Information System (INIS)

    Kajdalov, A.B.

    1986-01-01

    Experimental data on np interactions indicating to existence of narrow resonances in pp-system are discussed. Possible theoretical interpretations of these resonances are given. Experimental characteristics of the dibaryon resonances with isospin I=2 are considered

  3. Ultra-fine metal gate operated graphene optical intensity modulator

    Science.gov (United States)

    Kou, Rai; Hori, Yosuke; Tsuchizawa, Tai; Warabi, Kaori; Kobayashi, Yuzuki; Harada, Yuichi; Hibino, Hiroki; Yamamoto, Tsuyoshi; Nakajima, Hirochika; Yamada, Koji

    2016-12-01

    A graphene based top-gate optical modulator on a standard silicon photonic platform is proposed for the future optical telecommunication networks. On the basis of the device simulation, we proposed that an electro-absorption light modulation can be realized by an ultra-narrow metal top-gate electrode (width less than 400 nm) directly located on the top of a silicon wire waveguide. The designed structure also provides excellent features such as carrier doping and waveguide-planarization free fabrication processes. In terms of the fabrication, we established transferring of a CVD-grown mono-layer graphene sheet onto a CMOS compatible silicon photonic sample followed by a 25-nm thick ALD-grown Al2O3 deposition and Source-Gate-Drain electrodes formation. In addition, a pair of low-loss spot-size converter for the input and output area is integrated for the efficient light source coupling. The maximum modulation depth of over 30% (1.2 dB) is observed at a device length of 50 μm, and a metal width of 300 nm. The influence of the initial Fermi energy obtained by experiment on the modulation performance is discussed with simulation results.

  4. An optimization of the FPGA/NIOS adaptive FIR filter using linear prediction to reduce narrow band RFI for the next generation ground-based ultra-high energy cosmic-ray experiment

    Energy Technology Data Exchange (ETDEWEB)

    Szadkowski, Zbigniew, E-mail: zszadkow@kfd2.phys.uni.lodz.pl [University of Lodz, Department of Physics and Applied Informatics (Poland); Fraenkel, E.D. [Kernfysisch Versneller Instituut of the University of Groningen, Groningen (Netherlands); Glas, Dariusz; Legumina, Remigiusz [University of Lodz, Department of Physics and Applied Informatics (Poland)

    2013-12-21

    The electromagnetic part of an extensive air shower developing in the atmosphere provides significant information complementary to that obtained by water Cherenkov detectors which are predominantly sensitive to the muonic content of an air shower at ground. The emissions can be observed in the frequency band between 10 and 100 MHz. However, this frequency range is significantly contaminated by narrow-band RFI and other human-made distortions. The Auger Engineering Radio Array currently suppresses the RFI by multiple time-to-frequency domain conversions using an FFT procedure as well as by a set of manually chosen IIR notch filters in the time-domain. An alternative approach developed in this paper is an adaptive FIR filter based on linear prediction (LP). The coefficients for the linear predictor are dynamically refreshed and calculated in the virtual NIOS processor. The radio detector is an autonomous system installed on the Argentinean pampas and supplied from a solar panel. Powerful calculation capacity inside the FPGA is a factor. Power consumption versus the degree of effectiveness of the calculation inside the FPGA is a figure of merit to be minimized. Results show that the RFI contamination can be significantly suppressed by the LP FIR filter for 64 or less stages. -- Highlights: • We propose an adaptive method using linear prediction for periodic RFI suppression. • Requirements are the detection of short transient signals powered by solar panels. • The RFI is significantly suppressed by ∼70%, even in a very contaminated environment. • This method consumes less energy than the current method based on FFT used in AERA. • Distortion of the short transient signals is negligible.

  5. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto; Sevilla, Galo T.; Ghoneim, Mohamed T.; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2014-01-01

    In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100

  6. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  7. Internal Friction and Young's Modulus Measurements on SiO2 and Ta2O5 Films Done with an Ultra-High Q Silicon-Wafer Suspension

    Directory of Open Access Journals (Sweden)

    Granata M.

    2015-04-01

    Full Text Available In order to study the internal friction of thin films a nodal suspension system called GeNS (Gentle Nodal Suspension has been developed. The key features of this system are: i the possibility to use substrates easily available like silicon wafers; ii extremely low excess losses coming from the suspension system which allows to measure Q factors in excess of 2×108 on 3” diameter wafers; iii reproducibility of measurements within few percent on mechanical losses and 0.01% on resonant frequencies; iv absence of clamping; v the capability to operate at cryogenic temperatures. Measurements at cryogenic temperatures on SiO2 and at room temperature only on Ta2O5 films deposited on silicon are presented.

  8. Ultra-Broadband Silicon-Wire Polarization Beam Combiner/Splitter Based on a Wavelength Insensitive Coupler With a Point-Symmetrical Configuration

    OpenAIRE

    Uematsu, Takui; Kitayama, Tetsuya; Ishizaka, Yuhei; Saitoh, Kunimasa

    2014-01-01

    An ultrabroadband silicon wire polarization beam combiner/splitter (PBCS) based on a wavelength-insensitive coupler is proposed. The proposed PBCS consists of three identical directional couplers and two identical delay lines. We design the PBCS using the 3-D finite element method. Numerical simulations show that the proposed PBCS can achieve the transmittance of more than 90% over a wide wavelength range from 1450 to 1650 nm for both TE and TM polarized modes.

  9. Quantum conductance staircase of holes in silicon nanosandwiches

    Directory of Open Access Journals (Sweden)

    Nikolay T. Bagraev

    2017-03-01

    Full Text Available The results of studying the quantum conductance staircase of holes in one-dimensional channels obtained by the split-gate method inside silicon nanosandwiches that are the ultra-narrow quantum well confined by the delta barriers heavily doped with boron on the n-type Si (100 surface are reported. Since the silicon quantum wells studied are ultra-narrow (~2 nm and confined by the delta barriers that consist of the negative-U dipole boron centers, the quantized conductance of one-dimensional channels is observed at relatively high temperatures (T>77 K. Further, the current-voltage characteristic of the quantum conductance staircase is studied in relation to the kinetic energy of holes and their sheet density in the quantum wells. The results show that the quantum conductance staircase of holes in p-Si quantum wires is caused by independent contributions of the one-dimensional (1D subbands of the heavy and light holes. In addition, the field-related inhibition of the quantum conductance staircase is demonstrated in the situation when the energy of the field-induced heating of the carriers become comparable to the energy gap between the 1D subbands. The use of the split-gate method made it possible to detect the effect of a drastic increase in the height of the quantum conductance steps when the kinetic energy of holes is increased; this effect is most profound for quantum wires of finite length, which are not described under conditions of a quantum point contact. In the concluding section of this paper we present the findings for the quantum conductance staircase of holes that is caused by the edge channels in the silicon nanosandwiches prepared within frameworks of the Hall geometry. This longitudinal quantum conductance staircase, Gxx, is revealed by the voltage applied to the Hall contacts, with the plateaus and steps that bring into correlation respectively with the odd and even fractional values.

  10. Jihadism, Narrow and Wide

    DEFF Research Database (Denmark)

    Sedgwick, Mark

    2015-01-01

    The term “jihadism” is popular, but difficult. It has narrow senses, which are generally valuable, and wide senses, which may be misleading. This article looks at the derivation and use of “jihadism” and of related terms, at definitions provided by a number of leading scholars, and at media usage....... It distinguishes two main groups of scholarly definitions, some careful and narrow, and some appearing to match loose media usage. However, it shows that even these scholarly definitions actually make important distinctions between jihadism and associated political and theological ideology. The article closes...

  11. Correlates of Narrow Bracketing

    DEFF Research Database (Denmark)

    Koch, Alexander; Nafziger, Julia

    We examine whether different phenomena of narrow bracketing can be traced back to some common characteristic and whether and how different phenomena are related. We find that making dominated lottery choices or ignoring the endowment when making risky choices are related phenomena and are both as...

  12. Flexible Lamination-Fabricated Ultra-High Frequency Diodes Based on Self-Supporting Semiconducting Composite Film of Silicon Micro-Particles and Nano-Fibrillated Cellulose

    Science.gov (United States)

    Sani, Negar; Wang, Xin; Granberg, Hjalmar; Andersson Ersman, Peter; Crispin, Xavier; Dyreklev, Peter; Engquist, Isak; Gustafsson, Göran; Berggren, Magnus

    2016-06-01

    Low cost and flexible devices such as wearable electronics, e-labels and distributed sensors will make the future “internet of things” viable. To power and communicate with such systems, high frequency rectifiers are crucial components. We present a simple method to manufacture flexible diodes, operating at GHz frequencies, based on self-adhesive composite films of silicon micro-particles (Si-μPs) and glycerol dispersed in nanofibrillated cellulose (NFC). NFC, Si-μPs and glycerol are mixed in a water suspension, forming a self-supporting nanocellulose-silicon composite film after drying. This film is cut and laminated between a flexible pre-patterned Al bottom electrode and a conductive Ni-coated carbon tape top contact. A Schottky junction is established between the Al electrode and the Si-μPs. The resulting flexible diodes show current levels on the order of mA for an area of 2 mm2, a current rectification ratio up to 4 × 103 between 1 and 2 V bias and a cut-off frequency of 1.8 GHz. Energy harvesting experiments have been demonstrated using resistors as the load at 900 MHz and 1.8 GHz. The diode stack can be delaminated away from the Al electrode and then later on be transferred and reconfigured to another substrate. This provides us with reconfigurable GHz-operating diode circuits.

  13. SiliPET: An ultra-high resolution design of a small animal PET scanner based on stacks of double-sided silicon strip detector

    International Nuclear Information System (INIS)

    Di Domenico, Giovanni; Zavattini, Guido; Cesca, Nicola; Auricchio, Natalia; Andritschke, Robert; Schopper, Florian; Kanbach, Gottfried

    2007-01-01

    We investigated with Monte Carlo simulations, using the EGSNrcMP code, the capabilities of a small animal PET scanner based on four stacks of double-sided silicon strip detectors. Each stack consists of 40 silicon detectors with dimension of 60x60x1 mm 3 and 128 orthogonal strips on each side. Two coordinates of the interaction are given by the strips, whereas the third coordinate is given by the detector number in the stack. The stacks are arranged to form a box of 5x5x6 cm 3 with minor sides opened; the box represents the minimal FOV of the scanner. The performance parameters of the SiliPET scanner have been estimated giving a (positron range limited) spatial resolution of 0.52 mm FWHM, and an absolute sensitivity of 5.1% at the center of system. Preliminary results of a proof of principle measurement done with the MEGA advanced Compton imager using a ∼1 mm diameter 22 Na source, showed a focal ray tracing FWHM of 1 mm

  14. Metal-oxide-semiconductor devices based on epitaxial germanium-carbon layers grown directly on silicon substrates by ultra-high-vacuum chemical vapor deposition

    Science.gov (United States)

    Kelly, David Quest

    After the integrated circuit was invented in 1959, complementary metal-oxide-semiconductor (CMOS) technology soon became the mainstay of the semiconductor industry. Silicon-based CMOS has dominated logic technologies for decades. During this time, chip performance has grown at an exponential rate at the cost of higher power consumption and increased process complexity. The performance gains have been made possible through scaling down circuit dimensions by improvements in lithography capabilities. Since scaling cannot continue forever, researchers have vigorously pursued new ways of improving the performance of metal-oxide-semiconductor field-effect transistors (MOSFETs) without having to shrink gate lengths and reduce the gate insulator thickness. Strained silicon, with its ability to boost transistor current by improving the channel mobility, is one of the methods that has already found its way into production. Although not yet in production, high-kappa dielectrics have also drawn wide interest in industry since they allow for the reduction of the electrical oxide thickness of the gate stack without having to reduce the physical thickness of the dielectric. Further out on the horizon is the incorporation of high-mobility materials such as germanium (Ge), silicon-germanium (Si1-xGe x), and the III-V semiconductors. Among the high-mobility materials, Ge has drawn the most attention because it has been shown to be compatible with high-kappa dielectrics and to produce high drive currents compared to Si. Among the most difficult challenges for integrating Ge on Si is finding a suitable method for reducing the number of crystal defects. The use of strain-relaxed Si1- xGex buffers has proven successful for reducing the threading dislocation density in Ge epitaxial layers, but questions remain as to the viability of this method in terms of cost and process complexity. This dissertation presents research on thin germanium-carbon (Ge 1-yCy layers on Si for the fabrication

  15. The fabrication of silicon nanostructures by focused-ion-beam implantation and TMAH wet etching

    International Nuclear Information System (INIS)

    Sievilae, Paeivi; Chekurov, Nikolai; Tittonen, Ilkka

    2010-01-01

    Local gallium implantation of silicon by a focused ion beam (FIB) has been used to create a mask for anisotropic tetramethylammonium hydroxide (TMAH) wet etching. The dependence of the etch stop properties of gallium-doped silicon on the implanted dose has been investigated and a dose of 4 x 10 13 ions cm -2 has been determined to be the threshold value for achieving observable etching resistance. Only a thin, approx. 50 nm, surface layer is found to be durable enough to serve as a mask with a high selectivity of at least 2000:1 between implanted and non-implanted areas. The combined FIB-TMAH process has been used to generate various types of 3D nanostructures including nanochannels separated by thin vertical sidewalls with aspect ratios up to 1:30, ultra-narrow (approx. 25 nm) freestanding bridges and cantilevers, and gratings with a resolution of 20 lines μm -1 .

  16. Serial section scanning electron microscopy (S3EM) on silicon wafers for ultra-structural volume imaging of cells and tissues.

    Science.gov (United States)

    Horstmann, Heinz; Körber, Christoph; Sätzler, Kurt; Aydin, Daniel; Kuner, Thomas

    2012-01-01

    High resolution, three-dimensional (3D) representations of cellular ultrastructure are essential for structure function studies in all areas of cell biology. While limited subcellular volumes have been routinely examined using serial section transmission electron microscopy (ssTEM), complete ultrastructural reconstructions of large volumes, entire cells or even tissue are difficult to achieve using ssTEM. Here, we introduce a novel approach combining serial sectioning of tissue with scanning electron microscopy (SEM) using a conductive silicon wafer as a support. Ribbons containing hundreds of 35 nm thick sections can be generated and imaged on the wafer at a lateral pixel resolution of 3.7 nm by recording the backscattered electrons with the in-lens detector of the SEM. The resulting electron micrographs are qualitatively comparable to those obtained by conventional TEM. S(3)EM images of the same region of interest in consecutive sections can be used for 3D reconstructions of large structures. We demonstrate the potential of this approach by reconstructing a 31.7 µm(3) volume of a calyx of Held presynaptic terminal. The approach introduced here, Serial Section SEM (S(3)EM), for the first time provides the possibility to obtain 3D ultrastructure of large volumes with high resolution and to selectively and repetitively home in on structures of interest. S(3)EM accelerates process duration, is amenable to full automation and can be implemented with standard instrumentation.

  17. Serial section scanning electron microscopy (S3EM on silicon wafers for ultra-structural volume imaging of cells and tissues.

    Directory of Open Access Journals (Sweden)

    Heinz Horstmann

    Full Text Available High resolution, three-dimensional (3D representations of cellular ultrastructure are essential for structure function studies in all areas of cell biology. While limited subcellular volumes have been routinely examined using serial section transmission electron microscopy (ssTEM, complete ultrastructural reconstructions of large volumes, entire cells or even tissue are difficult to achieve using ssTEM. Here, we introduce a novel approach combining serial sectioning of tissue with scanning electron microscopy (SEM using a conductive silicon wafer as a support. Ribbons containing hundreds of 35 nm thick sections can be generated and imaged on the wafer at a lateral pixel resolution of 3.7 nm by recording the backscattered electrons with the in-lens detector of the SEM. The resulting electron micrographs are qualitatively comparable to those obtained by conventional TEM. S(3EM images of the same region of interest in consecutive sections can be used for 3D reconstructions of large structures. We demonstrate the potential of this approach by reconstructing a 31.7 µm(3 volume of a calyx of Held presynaptic terminal. The approach introduced here, Serial Section SEM (S(3EM, for the first time provides the possibility to obtain 3D ultrastructure of large volumes with high resolution and to selectively and repetitively home in on structures of interest. S(3EM accelerates process duration, is amenable to full automation and can be implemented with standard instrumentation.

  18. Ultra-thin g-C{sub 3}N{sub 4} nanosheets wrapped silicon nanowire array for improved chemical stability and enhanced photoresponse

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Beibei; Yu, Hongtao; Quan, Xie, E-mail: quanxie@dlut.edu.cn; Chen, Shuo

    2014-11-15

    Highlights: • g-C{sub 3}N{sub 4}, as an oxygen free and metal free protective material for Si, was proposed. • g-C{sub 3}N{sub 4} nanosheets wrapped Si nanowire array was synthesized. • SiNW/g-C{sub 3}N{sub 4} exhibited enhancement of photoelectrochemical stability and photocurrent. - Abstract: In order to inhibit the oxidation of Si materials in aqueous solution, Si nanowire array was wrapped by ultra-thin g-C{sub 3}N{sub 4} nanosheets via an electrophoresis process. Scanning electron microscopy and transmission electron microscopy images showed that g-C{sub 3}N{sub 4} nanosheets were evenly distributed on the surface of Si nanowire array. X-ray diffraction patterns indicated that Si nanowire array/g-C{sub 3}N{sub 4} nanosheets were composed of Si (4 0 0 crystal plane) and g-C{sub 3}N{sub 4} (0 0 2 and 1 0 0 crystal planes). The cyclic voltammetry curves revealed that the corrosion of Si nanowire array was restrained under the protection of g-C{sub 3}N{sub 4} nanosheets. Furthermore, the photocurrent density of Si nanowire array/g-C{sub 3}N{sub 4} nanosheets increased by nearly 3 times compared to that of bare Si nanowire array due to the effective charge separation caused by the built-in electric field at the interface. This work will facilitate the applications of Si materials in aqueous solution, such as solar energy harvest and photocatalytic pollution control.

  19. Phase tracking system for ultra narrow bandwidth applications

    NARCIS (Netherlands)

    Hill, M.T.; Cantoni, A.

    2002-01-01

    Recent advances make it possible to mitigate a number of drawbacks of conventional phase locked loops. These advances permit the design of phase tracking systems with much improved characteristics that are sought after in modern communication system applications. A new phase tracking system is

  20. Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

    Science.gov (United States)

    Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

    2013-07-29

    We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

  1. Narrow beam neutron dosimetry.

    Science.gov (United States)

    Ferenci, M Sutton

    2004-01-01

    Organ and effective doses have been estimated for male and female anthropomorphic mathematical models exposed to monoenergetic narrow beams of neutrons with energies from 10(-11) to 1000 MeV. Calculations were performed for anterior-posterior, posterior-anterior, left-lateral and right-lateral irradiation geometries. The beam diameter used in the calculations was 7.62 cm and the phantoms were irradiated at a height of 1 m above the ground. This geometry was chosen to simulate an accidental scenario (a worker walking through the beam) at Flight Path 30 Left (FP30L) of the Weapons Neutron Research (WNR) Facility at Los Alamos National Laboratory. The calculations were carried out using the Monte Carlo transport code MCNPX 2.5c.

  2. Dose evaluation of narrow-beam

    International Nuclear Information System (INIS)

    Goto, Shinichi

    1999-01-01

    Reliability of the dose from the narrow photon beam becomes more important since the single high-dose rate radiosurgery becoming popular. The dose evaluation for the optimal dose is difficult due to absence of lateral electronic equilibrium. Data necessary for treatment regimen are TMR (tissue maximum ratio), OCR (off center ratio) and S c,p (total scatter factor). The narrow-beam was 10 MV X-ray from Varian Clinac 2100C equipped with cylindrical Fischer collimator CBI system. Detection was performed by Kodak XV-2 film, a PTW natural diamond detector M60003, Scanditronics silicon detector EDD-5 or Fujitec micro-chamber FDC-9.4C. Phantoms were the water equivalent one (PTW, RW3), water one (PTW, MP3 system) and Wellhofer WP600 system. Factors above were actually measured to reveal that in the dose evaluation of narrow photon beam, TMR should be measured by micro-chamber, OCR, by film, and S c,p , by the two. The use of diamond detector was recommended for more precise measurement and evaluation of the dose. The importance of water phantom in the radiosurgery system was also shown. (K.H.)

  3. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  4. Narrow, duplicated internal auditory canal

    Energy Technology Data Exchange (ETDEWEB)

    Ferreira, T. [Servico de Neurorradiologia, Hospital Garcia de Orta, Avenida Torrado da Silva, 2801-951, Almada (Portugal); Shayestehfar, B. [Department of Radiology, UCLA Oliveview School of Medicine, Los Angeles, California (United States); Lufkin, R. [Department of Radiology, UCLA School of Medicine, Los Angeles, California (United States)

    2003-05-01

    A narrow internal auditory canal (IAC) constitutes a relative contraindication to cochlear implantation because it is associated with aplasia or hypoplasia of the vestibulocochlear nerve or its cochlear branch. We report an unusual case of a narrow, duplicated IAC, divided by a bony septum into a superior relatively large portion and an inferior stenotic portion, in which we could identify only the facial nerve. This case adds support to the association between a narrow IAC and aplasia or hypoplasia of the vestibulocochlear nerve. The normal facial nerve argues against the hypothesis that the narrow IAC is the result of a primary bony defect which inhibits the growth of the vestibulocochlear nerve. (orig.)

  5. Narrow field electromagnetic sensor system and method

    International Nuclear Information System (INIS)

    McEwan, T.E.

    1996-01-01

    A narrow field electromagnetic sensor system and method of sensing a characteristic of an object provide the capability to realize a characteristic of an object such as density, thickness, or presence, for any desired coordinate position on the object. One application is imaging. The sensor can also be used as an obstruction detector or an electronic trip wire with a narrow field without the disadvantages of impaired performance when exposed to dirt, snow, rain, or sunlight. The sensor employs a transmitter for transmitting a sequence of electromagnetic signals in response to a transmit timing signal, a receiver for sampling only the initial direct RF path of the electromagnetic signal while excluding all other electromagnetic signals in response to a receive timing signal, and a signal processor for processing the sampled direct RF path electromagnetic signal and providing an indication of the characteristic of an object. Usually, the electromagnetic signal is a short RF burst and the obstruction must provide a substantially complete eclipse of the direct RF path. By employing time-of-flight techniques, a timing circuit controls the receiver to sample only the initial direct RF path of the electromagnetic signal while not sampling indirect path electromagnetic signals. The sensor system also incorporates circuitry for ultra-wideband spread spectrum operation that reduces interference to and from other RF services while allowing co-location of multiple electronic sensors without the need for frequency assignments. 12 figs

  6. Danish Ultras

    DEFF Research Database (Denmark)

    Havelund, Jonas; Joern, Lise; Rasmussen, Kristian

    2012-01-01

    It is well documented that knowledge of supporter culture is crucial when assessing the risk of disorder at football matches and thereby ensuring a balanced approach by police and stewards (Stott & Pearson 2007). Both within Denmark and internationally, there is a weak understanding of risk suppo....... The article aims to create knowledge concerning ultra supporter culture with the purpose of gaining the information necessary for building differentiated and balanced action on the part of the police and security services....

  7. Flooding correlations in narrow channel

    International Nuclear Information System (INIS)

    Kim, S. H.; Baek, W. P.; Chang, S. H.

    1999-01-01

    Heat transfer in narrow gap is considered as important phenomena in severe accidents in nuclear power plants. Also in heat removal of electric chip. Critical heat flux(CHF) in narrow gap limits the maximum heat transfer rate in narrow channel. In case of closed bottom channel, flooding limited CHF occurrence is observed. Flooding correlations will be helpful to predict the CHF in closed bottom channel. In present study, flooding data for narrow channel geometry were collected and the work to recognize the effect of the span, w and gap size, s were performed. And new flooding correlations were suggested for high-aspect-ratio geometry. Also, flooding correlation was applied to flooding limited CHF data

  8. Narrow n anti n resonances

    International Nuclear Information System (INIS)

    Bogdanova, L.N.; Dalkarov, O.D.; Kerbikov, B.O.; Shapiro, I.S.

    1975-01-01

    The present status of the problem of quasinuclear states in systems of nucleons and antinucleons is reviewed. The theoretical predictions are compared with experimental data on narrow meson resonances near N anti N threshold which appeared in 1971-74

  9. All-Optical Signal Processing using Silicon Devices

    DEFF Research Database (Denmark)

    Oxenløwe, Leif Katsuo; Pu, Minhao; Ding, Yunhong

    2014-01-01

    This paper presents an overview of recent wo rk on the use of silicon waveguides for processing optical data signals. We will describe ultra-fast, ultra-broadband, polarisation-insensitive and phase-sensitive applications including processing of spectrally-efficient data formats and optical phase...

  10. Silicon based ultrafast optical waveform sampling

    DEFF Research Database (Denmark)

    Ji, Hua; Galili, Michael; Pu, Minhao

    2010-01-01

    A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode-locker as th......A 300 nmx450 nmx5 mm silicon nanowire is designed and fabricated for a four wave mixing based non-linear optical gate. Based on this silicon nanowire, an ultra-fast optical sampling system is successfully demonstrated using a free-running fiber laser with a carbon nanotube-based mode......-locker as the sampling source. A clear eye-diagram of a 320 Gbit/s data signal is obtained. The temporal resolution of the sampling system is estimated to 360 fs....

  11. Rectangular-cladding silicon slot waveguide with improved nonlinear performance

    Science.gov (United States)

    Huang, Zengzhi; Huang, Qingzhong; Wang, Yi; Xia, Jinsong

    2018-04-01

    Silicon slot waveguides have great potential in hybrid silicon integration to realize nonlinear optical applications. We propose a rectangular-cladding hybrid silicon slot waveguide. Simulation result shows that, with a rectangular-cladding, the slot waveguide can be formed by narrower silicon strips, so the two-photon absorption (TPA) loss in silicon is decreased. When the cladding material is a nonlinear polymer, the calculated TPA figure of merit (FOMTPA) is 4.4, close to the value of bulk nonlinear polymer of 5.0. This value confirms the good nonlinear performance of rectangular-cladding silicon slot waveguides.

  12. Silicon detectors

    International Nuclear Information System (INIS)

    Klanner, R.

    1984-08-01

    The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

  13. A 40-GBd QPSK/16-QAM integrated silicon coherent receiver

    NARCIS (Netherlands)

    Verbist, J.; Zhang, J.; Moeneclaey, B.; Soenen, W.; Van Weerdenburg, J.J.A.; Van Uden, R.; Okonkwo, C.M.; Bauwelinck, J.; Roelkens, G.; Yin, X.

    2016-01-01

    Through co-design of a dual SiGe transimpedance amplifier and an integrated silicon photonic circuit, we realized for the first time an ultra-compact and low-power silicon single-polarization coherent receiver operating at 40 GBd. A bit-error rate of <3.8× 10-3 was obtained for an optical

  14. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-12-01

    Today\\'s mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  15. CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Kutbee, Arwa T.; Hanna, Amir; Hussain, Muhammad Mustafa

    2014-01-01

    Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

  16. Optically trapped atomic resonant devices for narrow linewidth spectral imaging

    Science.gov (United States)

    Qian, Lipeng

    This thesis focuses on the development of atomic resonant devices for spectroscopic applications. The primary emphasis is on the imaging properties of optically thick atomic resonant fluorescent filters and their applications. In addition, this thesis presents a new concept for producing very narrow linewidth light as from an atomic vapor lamp pumped by a nanosecond pulse system. This research was motivated by application for missile warning system, and presents an innovative approach to a wide angle, ultra narrow linewidth imaging filter using a potassium vapor cell. The approach is to image onto and collect the fluorescent photons emitted from the surface of an optically thick potassium vapor cell, generating a 2 GHz pass-band imaging filter. This linewidth is narrow enough to fall within a Fraunhefer dark zone in the solar spectrum, thus make the detection solar blind. Experiments are conducted to measure the absorption line shape of the potassium resonant filter, the quantum efficiency of the fluorescent behavior, and the resolution of the fluorescent image. Fluorescent images with different spatial frequency components are analyzed by using a discrete Fourier transform, and the imaging capability of the fluorescent filter is described by its Modulation Transfer Function. For the detection of radiation that is spectrally broader than the linewidth of the potassium imaging filter, the fluorescent image is seen to be blurred by diffuse fluorescence from the slightly off resonant photons. To correct this, an ultra-thin potassium imaging filter is developed and characterized. The imaging property of the ultra-thin potassium imaging cell is tested with a potassium seeded flame, yielding a resolution image of ˜ 20 lines per mm. The physics behind the atomic resonant fluorescent filter is radiation trapping. The diffusion process of the resonant photons trapped in the atomic vapor is theoretically described in this thesis. A Monte Carlo method is used to simulate the

  17. Mechanical and electrical properties of ultra-thin chips and flexible electronics assemblies during bending

    NARCIS (Netherlands)

    Van Den Ende, D.A.; Van De Wiel, H.J.; Kusters, R.H.L.; Sridhar, A.; Schram, J.F.M.; Cauwe, M.; Van Den Brand, J.

    2014-01-01

    Ultra-thin chips of less than 20 μm become flexible, allowing integration of silicon IC technology with highly flexible electronics such as food packaging sensor systems or healthcare and sport monitoring tags as wearable patches or even directly in clothing textile. The ultra-thin chips in these

  18. QSOs with narrow emission lines

    International Nuclear Information System (INIS)

    Baldwin, J.A.; Mcmahon, R.; Hazard, C.; Williams, R.E.

    1988-01-01

    Observations of two new high-redshift, narrow-lined QSOs (NLQSOs) are presented and discussed together with observations of similar objects reported in the literature. Gravitational lensing is ruled out as a possible means of amplifying the luminosity for one of these objects. It is found that the NLQSOs have broad bases on their emission lines as well as the prominent narrow cores which define this class. Thus, these are not pole-on QSOs. The FWHM of the emission lines fits onto the smoothly falling tail of the lower end of the line-width distribution for complete QSO samples. The equivalent widths of the combined broad and narrow components of the lines are normal for QSOs of the luminosity range under study. However, the NLQSOs do show ionization differences from broader-lined QSOs; most significant, the semiforbidden C III/C IV intensity ratio is unusually low. The N/C abundance ratio in these objects is found to be normal; the Al/C abundance ratio may be quite high. 38 references

  19. Influence of the narrow {111} planes on axial and planar ion channeling.

    Science.gov (United States)

    Motapothula, M; Dang, Z Y; Venkatesan, T; Breese, M B H; Rana, M A; Osman, A

    2012-05-11

    We report channeling patterns where clearly resolved effects of the narrow {111} planes are observed in axial and planar alignments for 2 MeV protons passing through a 55 nm [001] silicon membrane. At certain axes, such as and , the offset in atomic rows forming the narrow {111} planes results in shielding from the large potential at the wide {111} planes, producing a region of shallow, asymmetric potential from which axial channeling patterns have no plane of symmetry. At small tilts from such axes, different behavior is observed from the wide and narrow {111} planes. At planar alignment, distinctive channeling effects due to the narrow planes are observed. As a consequence of the shallow potential well at the narrow planes, incident protons suffer dechanneled trajectories which are excluded from channeling within the wide planes, resulting in an anomalously large scattered beam at {111} alignment.

  20. Sun Ultra 5

    CERN Multimedia

    1998-01-01

    The Sun Ultra 5 is a 64-bit personal computer based on the UltraSPARC microprocessor line at a low price. The Ultra 5 has been declined in several variants: thus, some models have a processor with less cache memory to further decrease the price of the computer.

  1. Creep analysis of silicone for podiatry applications.

    Science.gov (United States)

    Janeiro-Arocas, Julia; Tarrío-Saavedra, Javier; López-Beceiro, Jorge; Naya, Salvador; López-Canosa, Adrián; Heredia-García, Nicolás; Artiaga, Ramón

    2016-10-01

    This work shows an effective methodology to characterize the creep-recovery behavior of silicones before their application in podiatry. The aim is to characterize, model and compare the creep-recovery properties of different types of silicone used in podiatry orthotics. Creep-recovery phenomena of silicones used in podiatry orthotics is characterized by dynamic mechanical analysis (DMA). Silicones provided by Herbitas are compared by observing their viscoelastic properties by Functional Data Analysis (FDA) and nonlinear regression. The relationship between strain and time is modeled by fixed and mixed effects nonlinear regression to compare easily and intuitively podiatry silicones. Functional ANOVA and Kohlrausch-Willians-Watts (KWW) model with fixed and mixed effects allows us to compare different silicones observing the values of fitting parameters and their physical meaning. The differences between silicones are related to the variations of breadth of creep-recovery time distribution and instantaneous deformation-permanent strain. Nevertheless, the mean creep-relaxation time is the same for all the studied silicones. Silicones used in palliative orthoses have higher instantaneous deformation-permanent strain and narrower creep-recovery distribution. The proposed methodology based on DMA, FDA and nonlinear regression is an useful tool to characterize and choose the proper silicone for each podiatry application according to their viscoelastic properties. Copyright © 2016 Elsevier Ltd. All rights reserved.

  2. Laser linewidth narrowing using transient spectral hole burning

    Energy Technology Data Exchange (ETDEWEB)

    Thiel, Charles W.; Cone, Rufus L. [Department of Physics, Montana State University, Bozeman, MT 59715 (United States); Böttger, Thomas, E-mail: tbottger@usfca.edu [Department of Physics and Astronomy, 2130 Fulton Street, University of San Francisco, San Francisco, CA 94117 (United States)

    2014-08-01

    We demonstrate significant narrowing of laser linewidths by high optical density materials with inhomogeneously broadened absorption. As a laser propagates through the material, the nonlinear spectral hole burning process causes a progressive self-filtering of the laser spectrum, potentially reaching values less than the homogeneous linewidth. The transient spectral hole dynamically adjusts itself to the instantaneous frequency of the laser, passively suppressing laser phase noise and side modes over the entire material absorption bandwidth without the need for electronic or optical feedback to the laser. Wide bandwidth laser phase noise suppression was demonstrated using Er{sup 3+} doped Y{sub 2}SiO{sub 5} and LiNbO{sub 3} at 1.5 μm by employing time-delayed self-heterodyne detection of an external cavity diode laser to study the spectral narrowing effect. Our method is not restricted to any particular wavelength or laser system and is attractive for a range of applications where ultra-low phase noise sources are required. - Highlights: • We demonstrate significant laser linewidths narrowing by high optical density materials. • Nonlinear spectral hole burning causes progressive self-filtering of laser spectrum. • Filter dynamically adjusts itself to the instantaneous frequency of the laser. • Demonstrated at 1.5 μm in Er{sup 3+} doped Y{sub 2}SiO{sub 5} and LiNbO{sub 3}. • Linewidth filtering is not restricted to any particular wavelength or laser system.

  3. ULTRA-LIGHTWEIGHT CEMENT

    International Nuclear Information System (INIS)

    Fred Sabins

    2001-01-01

    The objective of this project is to develop an improved ultra-lightweight cement using ultra-lightweight hollow glass spheres (ULHS). Work reported herein addresses Task 1: Assess Ultra-Lightweight Cementing Issues, Task 2: Review Russian Ultra-Lightweight Cement Literature, Task 3: Test Ultra-Lightweight Cements, and Task 8: Develop Field ULHS Cement Blending and Mixing Techniques. Results reported this quarter include: preliminary findings from a literature review focusing on problems associated with ultra-lightweight cements; summary of pertinent information from Russian ultra-lightweight cement literature review; laboratory tests comparing ULHS slurries to foamed slurries and sodium silicate slurries for two different applications; and initial laboratory studies with ULHS in preparation for a field job

  4. A continuous Czochralski silicon crystal growth system

    Science.gov (United States)

    Wang, C.; Zhang, H.; Wang, T. H.; Ciszek, T. F.

    2003-03-01

    Demand for large silicon wafers has driven the growth of silicon crystals from 200 to 300 mm in diameter. With the increasing silicon ingot sizes, melt volume has grown dramatically. Melt flow becomes more turbulent as melt height and volume increase. To suppress turbulent flow in a large silicon melt, a new Czochralski (CZ) growth furnace has been designed that has a shallow melt. In this new design, a crucible consists of a shallow growth compartment in the center and a deep feeding compartment around the periphery. Two compartments are connected with a narrow annular channel. A long crystal may be continuously grown by feeding silicon pellets into the dedicated feeding compartment. We use our numerical model to simulate temperature distribution and velocity field in a conventional 200-mm CZ crystal growth system and also in the new shallow crucible CZ system. By comparison, advantages and disadvantages of the proposed system are observed, operating conditions are determined, and the new system is improved.

  5. Reconfigurable SDM Switching Using Novel Silicon Photonic Integrated Circuit

    DEFF Research Database (Denmark)

    Ding, Yunhong; Kamchevska, Valerija; Dalgaard, Kjeld

    2016-01-01

    -division multiplexing switching using silicon photonic integrated circuit, which is fabricated on a novel silicon-oninsulator platform with buried Al mirror. The silicon photonic integrated circuit is composed of a 7x7 switch and low loss grating coupler array based multicore fiber couplers. Thanks to the Al mirror......, grating couplers with ultra-low coupling loss with optical multicore fibers is achieved. The lowest total insertion loss of the silicon integrated circuit is as low as 4.5 dB, with low crosstalk lower than -30 dB. Excellent performances in terms of low insertion loss and low crosstalk are obtained...

  6. Demultiplexing Surface Waves With Silicon Nanoantennas

    DEFF Research Database (Denmark)

    Sinev, I.; Bogdanov, A.; Komissarenko, F.

    2017-01-01

    We demonstrate directional launching of surface plasmon polaritons on thin gold film with a single silicon nanosphere. The directivity pattern of the excited surface waves exhibits rapid switching from forward to backward excitation within extremely narrow spectral hand (! 50 nm), which is driven...... by the mutual interference of magnetic and electric dipole moments supported by the dielectric nanoantenna....

  7. "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

    Science.gov (United States)

    Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

    2013-04-01

    During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

  8. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa

    2013-05-30

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  9. Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

    KAUST Repository

    Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

    2013-01-01

    Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  10. Ultra-fast framing camera tube

    Science.gov (United States)

    Kalibjian, Ralph

    1981-01-01

    An electronic framing camera tube features focal plane image dissection and synchronized restoration of the dissected electron line images to form two-dimensional framed images. Ultra-fast framing is performed by first streaking a two-dimensional electron image across a narrow slit, thereby dissecting the two-dimensional electron image into sequential electron line images. The dissected electron line images are then restored into a framed image by a restorer deflector operated synchronously with the dissector deflector. The number of framed images on the tube's viewing screen is equal to the number of dissecting slits in the tube. The distinguishing features of this ultra-fast framing camera tube are the focal plane dissecting slits, and the synchronously-operated restorer deflector which restores the dissected electron line images into a two-dimensional framed image. The framing camera tube can produce image frames having high spatial resolution of optical events in the sub-100 picosecond range.

  11. Silicon Nano-Photonic Devices

    DEFF Research Database (Denmark)

    Pu, Minhao

    with the couplers, a silicon ridge waveguide is utilized in nonlinear all-optical signal processing for optical time division multiplexing (OTDM) systems. Record ultra-highspeed error-free optical demultiplexing and waveform sampling are realized and demonstrated for the rst time. Microwave phase shifters and notch...... lters based on tunable microring resonators are proposed and analyzed. Based on a single microring resonator, a maximum radio frequency (RF) phase shift of 336degrees is obtained, but with large power variation. By utilizing a dual-microring resonator, a RF phase shifting range larger than 2pi...

  12. Narrow gap electronegative capacitive discharges

    Energy Technology Data Exchange (ETDEWEB)

    Kawamura, E.; Lieberman, M. A.; Lichtenberg, A. J. [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)

    2013-10-15

    Narrow gap electronegative (EN) capacitive discharges are widely used in industry and have unique features not found in conventional discharges. In this paper, plasma parameters are determined over a range of decreasing gap length L from values for which an electropositive (EP) edge exists (2-region case) to smaller L-values for which the EN region connects directly to the sheath (1-region case). Parametric studies are performed at applied voltage V{sub rf}=500 V for pressures of 10, 25, 50, and 100 mTorr, and additionally at 50 mTorr for 1000 and 2000 V. Numerical results are given for a parallel plate oxygen discharge using a planar 1D3v (1 spatial dimension, 3 velocity components) particle-in-cell (PIC) code. New interesting phenomena are found for the case in which an EP edge does not exist. This 1-region case has not previously been investigated in detail, either numerically or analytically. In particular, attachment in the sheaths is important, and the central electron density n{sub e0} is depressed below the density n{sub esh} at the sheath edge. The sheath oscillations also extend into the EN core, creating an edge region lying within the sheath and not characterized by the standard diffusion in an EN plasma. An analytical model is developed using minimal inputs from the PIC results, and compared to the PIC results for a base case at V{sub rf}=500 V and 50 mTorr, showing good agreement. Selected comparisons are made at the other voltages and pressures. A self-consistent model is also developed and compared to the PIC results, giving reasonable agreement.

  13. Ultra-orthodox Jewish Women Go to Work

    Directory of Open Access Journals (Sweden)

    Foscarini, Giorgia

    2014-12-01

    Full Text Available In the last three decades the ultra-orthodox community in Israel has experienced great changes in its internal social functioning. More specifically, these developments were linked to the education of ultra-orthodox women. Through an accurate review of the existing literature and a series of in-depth interviews with Israeli scholars, rabbis, educators and women of the ultra-orthodox community in Jerusalem, it was found that the introduction of new vocational and academic training tracks in women's education, is gradually changing the internal social structure of the ultra-orthodox family and community. The main consequence is expressed in a renegotiation of gender roles within the ultra-orthodox community and in a subversion of the traditional patriarchal framework. As a result of their participation in the labor market and in higher education institutions, women are more and more exposed to the Israeli secular culture, introducing in the traditional and segregated ultra-orthodox community customs typically modern, narrowing the gap between the ultra-orthodox community and the mainstream Israeli society.

  14. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar

    2017-03-30

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  15. Stretchable and foldable silicon-based electronics

    KAUST Repository

    Cavazos Sepulveda, Adrian Cesar; Diaz Cordero, M. S.; Carreno, Armando Arpys Arevalo; Nassar, Joanna M.; Hussain, Muhammad Mustafa

    2017-01-01

    Flexible and stretchable semiconducting substrates provide the foundation for novel electronic applications. Usually, ultra-thin, flexible but often fragile substrates are used in such applications. Here, we describe flexible, stretchable, and foldable 500-μm-thick bulk mono-crystalline silicon (100) “islands” that are interconnected via extremely compliant 30-μm-thick connectors made of silicon. The thick mono-crystalline segments create a stand-alone silicon array that is capable of bending to a radius of 130 μm. The bending radius of the array does not depend on the overall substrate thickness because the ultra-flexible silicon connectors are patterned. We use fracture propagation to release the islands. Because they allow for three-dimensional monolithic stacking of integrated circuits or other electronics without any through-silicon vias, our mono-crystalline islands can be used as a “more-than-Moore” strategy and to develop wearable electronics that are sufficiently robust to be compatible with flip-chip bonding.

  16. Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors

    Science.gov (United States)

    Kim, Il-Ho

    2018-05-01

    Thermoelectric materials can convert thermal energy directly into electric energy and vice versa. The electricity generation from waste heat via thermoelectric devices can be considered as a new energy source. For instance, automotive exhaust gas and all industrial processes generate an enormous amount of waste heat that can be converted to electricity by using thermoelectric devices. Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Mg2BIV has been recognized as a promising material for thermoelectric energy conversion at temperatures ranging from 500 K to 800 K. Compared to other thermoelectric materials operating in the similar temperature range, such as PbTe and filled skutterudites, the important aspects of Mg2BIV are non-toxic and earth-abundant elements. Based on classical thermoelectric theory, the material factor β ( m* / m e)3/2μκ L -1 can be utilized as the criterion for thermoelectric material selection, where m* is the density-of-states effective mass, me is the mass of an electron, μ is the carrier mobility, and κL is the lattice thermal conductivity. The β for magnesium silicides is 14, which is very high compared to 0.8 for iron silicides, 1.4 for manganese silicides, and 2.6 for silicon-germanium alloys. In this paper, basic phenomena of thermoelectricity and transport parameters for thermoelectric materials were briefly introduced, and thermoelectric properties of Mg2BIV synthesized by using a solid-state reaction were reviewed. In addition, various Mg2BIV compounds were discussed

  17. Ultra-compact Ku band rectenna

    OpenAIRE

    Takacs , Alexandru; Aubert , Hervé; Charlot , Samuel

    2015-01-01

    International audience; This paper addresses an innovative and ultra-compact rectenna designed for energy harvesting or wireless power transfer applications. The presented rectenna uses a printed cross dipoles antenna array and a rectifier implemented with only one silicon Schottky diode. Experimental results show that 1.15 mW of DC power can be obtained for an optimal load impedance of 500 Ω using a compact rectenna (2.5 cm 2 or 0.6 square wavelength) illuminated by an electric field of 60 V...

  18. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  19. The first results of siliconization on SWIP-RFP device

    International Nuclear Information System (INIS)

    Zhang Peng; Li Qiang; Luo Cuiwen; Li Jieping; Qian Shangjie; Fang Shuiquan; Yi Ping; Xue Jun; Li Kehua; Luo Junlin; Hong Wenyu; Cao Zeng; Zhang Nianman; Wang Quanming; Li Jie; Huang Ming; Zhong Yunze; Zhang Qingchun; Luo Cuixian

    1997-01-01

    The first results of reversed field pinch (RFP) and ultra low safety factor (ULQ) plasma experiments with siliconization on SWIP-RFP device are presented in this paper. The siliconization decreases the impurity concentrations in the plasma and increases the configuration sustainment time. Ion temperature has been estimated with the CV line of the visible light spectra and the broadening of CIII lines in vacuum ultraviolet (VUV) region. The anomalous ion heating as well as the anomalous resistance were observed. (orig.)

  20. Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

    Science.gov (United States)

    Jung-Kubiak, Cecile (Inventor); Reck, Theodore (Inventor); Chattopadhyay, Goutam (Inventor); Perez, Jose Vicente Siles (Inventor); Lin, Robert H. (Inventor); Mehdi, Imran (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Peralta, Alejandro (Inventor)

    2016-01-01

    A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

  1. Dynamic characterization of silicon nanowires using a terahertz optical asymmetric demultiplexer-based pump-probe scheme

    DEFF Research Database (Denmark)

    Ji, Hua; Cleary, C. S.; Dailey, J. M.

    2012-01-01

    Dynamic phase and amplitude all-optical responses of silicon nanowires are characterized using a terahertz optical asymmetric demultiplexer (TOAD) based pump-probe scheme. Ultra-fast recovery is observed for moderate pump powers....

  2. Excitation dependence of photoluminescence in silicon quantum dots

    International Nuclear Information System (INIS)

    Wen Xiaoming; Lap Van Dao; Hannaford, Peter; Cho, E-C; Cho, Young H; Green, Martin A

    2007-01-01

    We have studied the optical properties of silicon quantum dots (QDs) embedded in a silicon oxide matrix using photoluminescence (PL) and time-resolved PL. A broad luminescence band is observed in the red region, in which the time evolution exhibits a stretched exponential decay. With increasing excitation intensity a significant saturation effect is observed. Direct electron-hole recombination is the dominant effect in the red band. A relatively narrow peak appears around 1.5 eV, which is attributed to the interface states overlapping with transition from the ground state of the silicon QDs. The saturation factor increases slowly with detection photon energy between 1.5 and 1.8 eV, which is attributed to the emission from zero-phonon electron-hole recombination. At higher photon energies the significantly increased saturation factor suggests a different emission mechanism, most likely the defect states from silicon, silicon oxide or silicon rich oxide

  3. Velocity selection for ultra-cold atoms using bimodal mazer cavity

    International Nuclear Information System (INIS)

    Irshad, A.; Qamar, S.

    2009-04-01

    In this paper, we discuss the velocity selection of ultra-cold three-level atoms in Λ configuration using a micromazer. Our model is the same as discussed by Arun et al., for mazer action in a bimodal cavity. We have shown that significantly narrowed velocity distribution of ultra-cold atoms can be obtained in this system due to the presence of dark states. (author)

  4. Design of narrow band photonic filter with compact MEMS for tunable resonant wavelength ranging 100 nm

    Directory of Open Access Journals (Sweden)

    Guanquan Liang

    2011-12-01

    Full Text Available A prototype of planar silicon photonic structure is designed and simulated to provide narrow resonant line-width (∼2 nm in a wide photonic band gap (∼210 nm with broad tunable resonant wavelength range (∼100 nm around the optical communication wavelength 1550 nm. This prototype is based on the combination of two modified basic photonic structures, i.e. a split tapered photonic crystal micro-cavity embedded in a photonic wire waveguide, and a slot waveguide with narrowed slabs. This prototype is then further integrated with a MEMS (microelectromechanical systems based electrostatic comb actuator to achieve “coarse tune” and “fine tune” at the same time for wide range and narrow-band filtering and modulating. It also provides a wide range tunability to achieve the designed resonance even fabrication imperfection occurs.

  5. Ultra-low coupling loss fully-etched apodized grating coupler with bonded metal mirror

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

    2014-01-01

    A fully etched apodized grating coupler with bonded metal mirror is designed and demonstrated on the silicon-on-insulator platform, showing an ultra-low coupling loss of only 1.25 dB with 3 dB bandwidth of 69 nm.......A fully etched apodized grating coupler with bonded metal mirror is designed and demonstrated on the silicon-on-insulator platform, showing an ultra-low coupling loss of only 1.25 dB with 3 dB bandwidth of 69 nm....

  6. Ultra-High-Efficiency Apodized Grating Coupler Using a Fully Etched Photonic Crystal

    DEFF Research Database (Denmark)

    Ding, Yunhong; Peucheret, Christophe; Ou, Haiyan

    2013-01-01

    We demonstrate an apodized fiber-to-chip grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform. An ultra-high coupling efficiency of 1.65 dB (68%) with 3 dB bandwidth of 60 nm is experimentally demonstrated.......We demonstrate an apodized fiber-to-chip grating coupler using fully etched photonic crystal holes on the silicon-on-insulator platform. An ultra-high coupling efficiency of 1.65 dB (68%) with 3 dB bandwidth of 60 nm is experimentally demonstrated....

  7. Inverse design engineering of all-silicon polarization beam splitters

    DEFF Research Database (Denmark)

    Frandsen, Lars Hagedorn; Sigmund, Ole

    2016-01-01

    Utilizing the inverse design engineering method of topology optimization, we have realized high-performing all-silicon ultra-compact polarization beam splitters. We show that the device footprint of the polarization beam splitter can be as compact as similar to 2 µm2 while performing experimentally...

  8. Device Physics of Narrow Gap Semiconductors

    CERN Document Server

    Chu, Junhao

    2010-01-01

    Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only the semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The last chapter applies the understanding of device physics to photoconductive detectors, photovoltaic infrared detector...

  9. Ultra-high Performance Liquid Chromatography in Steroid Analysis

    OpenAIRE

    Salonen, Fanny

    2017-01-01

    The latest version of liquid chromatography is ultra-high performance (or pressure) chromatography (UHPLC). In the technique, short and narrow-bore columns with particle sizes below 3 µm are used. The extremely high pressure used results in very short analysis times, excellent separation, and good resolution. This makes UHPLC a good choice for steroidal analysis. Steroids are a highly interesting area of study; they can be recognized as biomarkers for several diseases and are a relevant topic...

  10. Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

    Directory of Open Access Journals (Sweden)

    Ana Luz Muñoz-Rosas

    2018-03-01

    Full Text Available Nowadays, the use of plasmonic metal layers to improve the photonic emission characteristics of several semiconductor quantum dots is a booming tool. In this work, we report the use of silicon quantum dots (SiQDs embedded in a silicon nitride thin film coupled with an ultra-thin gold film (AuNPs to fabricate light emitting devices. We used the remote plasma enhanced chemical vapor deposition technique (RPECVD in order to grow two types of silicon nitride thin films. One with an almost stoichiometric composition, acting as non-radiative spacer; the other one, with a silicon excess in its chemical composition, which causes the formation of silicon quantum dots imbibed in the silicon nitride thin film. The ultra-thin gold film was deposited by the direct current (DC-sputtering technique, and an aluminum doped zinc oxide thin film (AZO which was deposited by means of ultrasonic spray pyrolysis, plays the role of the ohmic metal-like electrode. We found that there is a maximum electroluminescence (EL enhancement when the appropriate AuNPs-spacer-SiQDs configuration is used. This EL is achieved at a moderate turn-on voltage of 11 V, and the EL enhancement is around four times bigger than the photoluminescence (PL enhancement of the same AuNPs-spacer-SiQDs configuration. From our experimental results, we surmise that EL enhancement may indeed be due to a plasmonic coupling. This kind of silicon-based LEDs has the potential for technology transfer.

  11. Geochemistry of silicon isotopes

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Tiping; Li, Yanhe; Gao, Jianfei; Hu, Bin [Chinese Academy of Geological Science, Beijing (China). Inst. of Mineral Resources; Jiang, Shaoyong [China Univ. of Geosciences, Wuhan (China).

    2018-04-01

    Silicon is one of the most abundant elements in the Earth and silicon isotope geochemistry is important in identifying the silicon source for various geological bodies and in studying the behavior of silicon in different geological processes. This book starts with an introduction on the development of silicon isotope geochemistry. Various analytical methods are described and compared with each other in detail. The mechanisms of silicon isotope fractionation are discussed, and silicon isotope distributions in various extraterrestrial and terrestrial reservoirs are updated. Besides, the applications of silicon isotopes in several important fields are presented.

  12. Plasmonic and silicon spherical nanoparticle antireflective coatings

    Science.gov (United States)

    Baryshnikova, K. V.; Petrov, M. I.; Babicheva, V. E.; Belov, P. A.

    2016-03-01

    Over the last decade, plasmonic antireflecting nanostructures have been extensively studied to be utilized in various optical and optoelectronic systems such as lenses, solar cells, photodetectors, and others. The growing interest to all-dielectric photonics as an alternative optical technology along with plasmonics motivates us to compare antireflective properties of plasmonic and all-dielectric nanoparticle coatings based on silver and crystalline silicon respectively. Our simulation results for spherical nanoparticles array on top of amorphous silicon show that both silicon and silver coatings demonstrate strong antireflective properties in the visible spectral range. For the first time, we show that zero reflectance from the structure with silicon coatings originates from the destructive interference of electric- and magnetic-dipole responses of nanoparticle array with the wave reflected from the substrate, and we refer to this reflection suppression as substrate-mediated Kerker effect. We theoretically compare the silicon and silver coating effectiveness for the thin-film photovoltaic applications. Silver nanoparticles can be more efficient, enabling up to 30% increase of the overall absorbance in semiconductor layer. Nevertheless, silicon coatings allow up to 64% absorbance increase in the narrow band spectral range because of the substrate-mediated Kerker effect, and band position can be effectively tuned by varying the nanoparticles sizes.

  13. Photonic Crystal Sensors Based on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Claudia Pacholski

    2013-04-01

    Full Text Available Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential.

  14. Photonic Crystal Sensors Based on Porous Silicon

    Science.gov (United States)

    Pacholski, Claudia

    2013-01-01

    Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

  15. High-Q energy trapping of temperature-stable shear waves with Lamé cross-sectional polarization in a single crystal silicon waveguide

    Science.gov (United States)

    Tabrizian, R.; Daruwalla, A.; Ayazi, F.

    2016-03-01

    A multi-port electrostatically driven silicon acoustic cavity is implemented that efficiently traps the energy of a temperature-stable eigen-mode with Lamé cross-sectional polarization. Dispersive behavior of propagating and evanescent guided waves in a ⟨100⟩-aligned single crystal silicon waveguide is used to engineer the acoustic energy distribution of a specific shear eigen-mode that is well known for its low temperature sensitivity when implemented in doped single crystal silicon. Such an acoustic energy trapping in the central region of the acoustic cavity geometry and far from substrate obviates the need for narrow tethers that are conventionally used for non-destructive and high quality factor (Q) energy suspension in MEMS resonators; therefore, the acoustically engineered waveguide can simultaneously serve as in-situ self-oven by passing large uniformly distributed DC currents through its body and without any concern about perturbing the mode shape or deforming narrow supports. Such a stable thermo-structural performance besides large turnover temperatures than can be realized in Lamé eigen-modes make this device suitable for implementation of ultra-stable oven-controlled oscillators. 78 MHz prototypes implemented in arsenic-doped single crystal silicon substrates with different resistivity are transduced by in- and out-of-plane narrow-gap capacitive ports, showing high Q of ˜43k. The low resistivity device shows an overall temperature-induced frequency drift of 200 ppm over the range of -20 °C to 80 °C, which is ˜15× smaller compared to overall frequency drift measured for the similar yet high resistivity device in the same temperature range. Furthermore, a frequency tuning of ˜2100 ppm is achieved in high resistivity device by passing 45 mA DC current through its body. Continuous operation of the device under such a self-ovenizing current over 10 days did not induce frequency instability or degradation in Q.

  16. Highly Tunable Narrow Bandpass MEMS Filter

    KAUST Repository

    Hafiz, Md Abdullah Al

    2017-07-07

    We demonstrate a proof-of-concept highly tunable narrow bandpass filter based on electrothermally and electrostatically actuated microelectromechanical-system (MEMS) resonators. The device consists of two mechanically uncoupled clamped-clamped arch resonators, designed such that their resonance frequencies are independently tuned to obtain the desired narrow passband. Through the electrothermal and electrostatic actuation, the stiffness of the structures is highly tunable. We experimentally demonstrate significant percentage tuning (~125%) of the filter center frequency by varying the applied electrothermal voltages to the resonating structures, while maintaining a narrow passband of 550 ± 50 Hz, a stopband rejection of >17 dB, and a passband ripple ≤ 2.5 dB. An analytical model based on the Euler-Bernoulli beam theory is used to confirm the behavior of the filter, and the origin of the high tunability using electrothermal actuation is discussed.

  17. Performance characteristics and radiation damage results from the Fermilab E706 silicon microstrip detector system

    Energy Technology Data Exchange (ETDEWEB)

    Engels, E Jr; Mani, S; Orris, D; Shepard, P F; Weerasundara, P D; Choudhary, B C; Joshi, U; Kapoor, V; Shivpuri, R; Baker, W

    1989-07-01

    A charged particle spectrometer containing a 7120-channel silicon microstrip detector system, one component of Fermilab experiment E706 to study direct photon production in hadron-hadron collisions, was utilized in a run in which 6 million events were recorded. We describe the silicon system, provide early results of track and vertex reconstruction, and present data on the radiation damage to the silicon wafers resulting from the narrow high intensity beam. (orig.).

  18. Positron annihilation spectroscopy study of porous silicon

    International Nuclear Information System (INIS)

    Britkov, O.M.; Gavrilov, S.A.; Kalugin, V.V.; Timoshenkov, S.P.; Grafutin, V.I.; Ilyukhina, O.V.; Myasishcheva, G.G.; Prokop'ev, E.P.; Funtikov, Yu.V.

    2007-01-01

    Experimental studies of porous silicon by means of a standard positron annihilation technique based on measuring the angular distribution of annihilation photons, are reported. It was shown that the spectra of angular correlation of annihilation radiation in porous silicon are approximated well by a parabola (I p ) and two Gaussians (I g1 , I g2 ). The narrow Gaussian component I g1 is most likely due to the annihilation of localized para-positronium in pores. The full width at half maximum is on the order of 0.8 mrad, a value that corresponds to the kinetic energy of an annihilating positron-electron pair (0.079 ± 0.012 eV), and its intensity is about 1.5%. The total positronium yield in porous silicon reaches 6% in this case. The particle radius determined in the study is about 10-20 A [ru

  19. Ultra wide band antennas

    CERN Document Server

    Begaud, Xavier

    2013-01-01

    Ultra Wide Band Technology (UWB) has reached a level of maturity that allows us to offer wireless links with either high or low data rates. These wireless links are frequently associated with a location capability for which ultimate accuracy varies with the inverse of the frequency bandwidth. Using time or frequency domain waveforms, they are currently the subject of international standards facilitating their commercial implementation. Drawing up a complete state of the art, Ultra Wide Band Antennas is aimed at students, engineers and researchers and presents a summary of internationally recog

  20. Natural Convective Heat Transfer from Narrow Plates

    CERN Document Server

    Oosthuizen, Patrick H

    2013-01-01

    Natural Convective Heat Transfer from Narrow Plates deals with a heat transfer situation that is of significant practical importance but which is not adequately dealt with in any existing textbooks or in any widely available review papers. The aim of the book is to introduce the reader to recent studies of natural convection from narrow plates including the effects of plate edge conditions, plate inclination, thermal conditions at the plate surface and interaction of the flows over adjacent plates. Both numerical and experimental studies are discussed and correlation equations based on the results of these studies are reviewed.

  1. A naturally narrow positive-parity Θ+

    International Nuclear Information System (INIS)

    Carlson, Carl E.; Carone, Christopher D.; Kwee, Herry J.; Nazaryan, Vahagn

    2004-01-01

    We present a consistent color-flavor-spin-orbital wave function for a positive-parity Θ + that naturally explains the observed narrowness of the state. The wave function is totally symmetric in its flavor-spin part and totally antisymmetric in its color-orbital part. If flavor-spin interactions dominate, this wave function renders the positive-parity Θ + lighter than its negative-parity counterpart. We consider decays of the Θ + and compute the overlap of this state with the kinematically allowed final states. Our results are numerically small. We note that dynamical correlations between quarks are not necessary to obtain narrow pentaquark widths

  2. Narrow Escape of Interacting Diffusing Particles

    Science.gov (United States)

    Agranov, Tal; Meerson, Baruch

    2018-03-01

    The narrow escape problem deals with the calculation of the mean escape time (MET) of a Brownian particle from a bounded domain through a small hole on the domain's boundary. Here we develop a formalism which allows us to evaluate the nonescape probability of a gas of diffusing particles that may interact with each other. In some cases the nonescape probability allows us to evaluate the MET of the first particle. The formalism is based on the fluctuating hydrodynamics and the recently developed macroscopic fluctuation theory. We also uncover an unexpected connection between the narrow escape of interacting particles and thermal runaway in chemical reactors.

  3. II-VI Narrow-Bandgap Semiconductors for Optoelectronics

    Science.gov (United States)

    Baker, Ian

    The field of narrow-gap II-VI materials is dominated by the compound semiconductor mercury cadmium telluride, (Hg1-x Cd x Te or MCT), which supports a large industry in infrared detectors, cameras and infrared systems. It is probably true to say that HgCdTe is the third most studied semiconductor after silicon and gallium arsenide. Hg1-x Cd x Te is the material most widely used in high-performance infrared detectors at present. By changing the composition x the spectral response of the detector can be made to cover the range from 1 μm to beyond 17 μm. The advantages of this system arise from a number of features, notably: close lattice matching, high optical absorption coefficient, low carrier generation rate, high electron mobility and readily available doping techniques. These advantages mean that very sensitive infrared detectors can be produced at relatively high operating temperatures. Hg1-x Cd x Te multilayers can be readily grown in vapor-phase epitaxial processes. This provides the device engineer with complex doping and composition profiles that can be used to further enhance the electro-optic performance, leading to low-cost, large-area detectors in the future. The main purpose of this chapter is to describe the applications, device physics and technology of II-VI narrow-bandgap devices, focusing on HgCdTe but also including Hg1-x Mn x Te and Hg1-x Zn x Te. It concludes with a review of the research and development programs into third-generation infrared detector technology (so-called GEN III detectors) being performed in centers around the world.

  4. Tunable Narrow Band Gap Absorbers For Ultra High Efficiency Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Bedair, Salah M. [North Carolina State Univ., Raleigh, NC (United States); Hauser, John R. [North Carolina State Univ., Raleigh, NC (United States); Elmasry, Nadia [North Carolina State Univ., Raleigh, NC (United States); Colter, Peter C. [North Carolina State Univ., Raleigh, NC (United States); Bradshaw, G. [North Carolina State Univ., Raleigh, NC (United States); Carlin, C. Z. [North Carolina State Univ., Raleigh, NC (United States); Samberg, J. [North Carolina State Univ., Raleigh, NC (United States); Edmonson, Kenneth [Spectrolab, Inc., Sylmar, CA (United States)

    2012-07-31

    We report on a joint research program between NCSU and Spectrolab to develop an upright multijunction solar cell structure with a potential efficiency exceeding the current record of 41.6% reported by Spectrolab. The record efficiency Ge/GaAs/InGaP triple junction cell structure is handicapped by the fact that the current generated by the Ge cell is much higher than that of both the middle and top cells. We carried out a modification of the record cell structure that will keep the lattice matched condition and allow better matching of the current generated by each cell. We used the concept of strain balanced strained layer superlattices (SLS), inserted in the i-layer, to reduce the bandgap of the middle cell without violating the desirable lattice matched condition. For the middle GaAs cell, we have demonstrated an n-GaAs/i-(InGaAs/GaAsP)/p-GaAs structure, where the InxGa1-xAs/GaAs1-yPy SLS is grown lattice matched to GaAs and with reduced bandgap from 1.43 eV to 1.2 eV, depending upon the values of x and y.

  5. Opto-electrical approaches for high efficiency and ultra-thin c-Si solar cells

    NARCIS (Netherlands)

    Ingenito, A.; Isabella, O.; Zeman, M.

    2014-01-01

    The need for cost reduction requires using less raw material and cost-effective processes without sacrificing the conversion efficiency. For keeping high the generated photo-current, an advanced light trapping scheme for ultra-thin silicon wafers is here proposed, exhibiting absorptances up to 99%

  6. Narrow linewidth pulsed optical parametric oscillator

    Indian Academy of Sciences (India)

    Tunable narrow linewidth radiation by optical parametric oscillation has many applications, particularly in spectroscopic investigation. In this paper, different techniques such as injection seeding, use of spectral selecting element like grating, grating and etalon in combination, grazing angle of incidence, entangled cavity ...

  7. ULTRA-LIGHTWEIGHT CEMENT

    Energy Technology Data Exchange (ETDEWEB)

    Fred Sabins

    2001-10-23

    The objective of this project is to develop an improved ultra-lightweight cement using ultra-lightweight hollow glass spheres (ULHS). Work reported herein addresses tasks performed in the fourth quarter as well as the other three quarters of the past year. The subjects that were covered in previous reports and that are also discussed in this report include: Analysis of field laboratory data of active cement applications from three oil-well service companies; Preliminary findings from a literature review focusing on problems associated with ultra-lightweight cements; Summary of pertinent information from Russian ultra-lightweight cement literature review; and Comparison of compressive strengths of ULHS systems using ultrasonic and crush methods Results reported from the fourth quarter include laboratory testing of ULHS systems along with other lightweight cement systems--foamed and sodium silicate slurries. These comparison studies were completed for two different densities (10.0 and 11.5 lb/gal) and three different field application scenarios. Additional testing included the mechanical properties of ULHS systems and other lightweight systems. Studies were also performed to examine the effect that circulation by centrifugal pump during mixing has on breakage of ULHS.

  8. Ultra-high Efficiency DC-DC Converter using GaN Devices

    DEFF Research Database (Denmark)

    Ramachandran, Rakesh

    2016-01-01

    properties of GaN devices can be utilized in power converters to make them more compact and highly efficient. This thesis entitled “Ultra-high Efficiency DC-DC Converter using GaN devices” focuses on achieving ultra-high conversion efficiency in an isolated dc-dc converter by the optimal utilization of Ga...... for many decades. However, the rate of improvement slowed as the silicon power materials asymptotically approached its theoretical bounds. Compared to Si, wideband gap materials such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are promising semiconductors for power devices due to their superior...... in this thesis. Efficiency measurements from the hardware prototype of both the topologies are also presented in this thesis. Finally, the bidirectional operation of an optimized isolated dc-dc converter is presented. The optimized converter has achieved an ultra-high efficiency of 98.8% in both directions...

  9. Ultra-thin film encapsulation processes for micro-electro-mechanical devices and systems

    International Nuclear Information System (INIS)

    Stoldt, Conrad R; Bright, Victor M

    2006-01-01

    A range of physical properties can be achieved in micro-electro-mechanical systems (MEMS) through their encapsulation with solid-state, ultra-thin coatings. This paper reviews the application of single source chemical vapour deposition and atomic layer deposition (ALD) in the growth of submicron films on polycrystalline silicon microstructures for the improvement of microscale reliability and performance. In particular, microstructure encapsulation with silicon carbide, tungsten, alumina and alumina-zinc oxide alloy ultra-thin films is highlighted, and the mechanical, electrical, tribological and chemical impact of these overlayers is detailed. The potential use of solid-state, ultra-thin coatings in commercial microsystems is explored using radio frequency MEMS as a case study for the ALD alloy alumina-zinc oxide thin film. (topical review)

  10. Buried oxide layer in silicon

    Science.gov (United States)

    Sadana, Devendra Kumar; Holland, Orin Wayne

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  11. Evolution of deformation velocity in narrowing for Zircaloy 2

    Energy Technology Data Exchange (ETDEWEB)

    Cetlin, P R [Minas Gerais Univ., Belo Horizonte (Brazil). Dept. de Engenharia Metalurgica; Okuda, M Y [Goias Univ., Goiania (Brazil). Inst. de Matematica e Fisica

    1980-09-01

    Some studies on the deformation instability in strain shows that the differences in this instability may lead to localized narrowing or elongated narrowing, for Zircaloy-2. The variation of velocity deformation with the narrowing evolution is expected to be different for these two cases. The mentioned variation is discussed, a great difference in behavior having been observed for the case of localized narrowing.

  12. Analytical approximations for wide and narrow resonances

    International Nuclear Information System (INIS)

    Suster, Luis Carlos; Martinez, Aquilino Senra; Silva, Fernando Carvalho da

    2005-01-01

    This paper aims at developing analytical expressions for the adjoint neutron spectrum in the resonance energy region, taking into account both narrow and wide resonance approximations, in order to reduce the numerical computations involved. These analytical expressions, besides reducing computing time, are very simple from a mathematical point of view. The results obtained with this analytical formulation were compared to a reference solution obtained with a numerical method previously developed to solve the neutron balance adjoint equations. Narrow and wide resonances of U 238 were treated and the analytical procedure gave satisfactory results as compared with the reference solution, for the resonance energy range. The adjoint neutron spectrum is useful to determine the neutron resonance absorption, so that multigroup adjoint cross sections used by the adjoint diffusion equation can be obtained. (author)

  13. Analytical approximations for wide and narrow resonances

    Energy Technology Data Exchange (ETDEWEB)

    Suster, Luis Carlos; Martinez, Aquilino Senra; Silva, Fernando Carvalho da [Universidade Federal, Rio de Janeiro, RJ (Brazil). Coordenacao dos Programas de Pos-graduacao de Engenharia. Programa de Engenharia Nuclear]. E-mail: aquilino@lmp.ufrj.br

    2005-07-01

    This paper aims at developing analytical expressions for the adjoint neutron spectrum in the resonance energy region, taking into account both narrow and wide resonance approximations, in order to reduce the numerical computations involved. These analytical expressions, besides reducing computing time, are very simple from a mathematical point of view. The results obtained with this analytical formulation were compared to a reference solution obtained with a numerical method previously developed to solve the neutron balance adjoint equations. Narrow and wide resonances of U{sup 238} were treated and the analytical procedure gave satisfactory results as compared with the reference solution, for the resonance energy range. The adjoint neutron spectrum is useful to determine the neutron resonance absorption, so that multigroup adjoint cross sections used by the adjoint diffusion equation can be obtained. (author)

  14. Narrow band wavelength selective filter using grating assisted single ring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Prabhathan, P., E-mail: PPrabhathan@ntu.edu.sg; Murukeshan, V. M. [Centre for Optical and Laser Engineering (COLE), School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2014-09-15

    This paper illustrates a filter configuration which uses a single ring resonator of larger radius connected to a grating resonator at its drop port to achieve single wavelength selectivity and switching property with spectral features suitable for on-chip wavelength selection applications. The proposed configuration is expected to find applications in silicon photonics devices such as, on-chip external cavity lasers and multi analytic label-free biosensors. The grating resonator has been designed for a high Q-factor, high transmittivity, and minimum loss so that the wavelength selectivity of the device is improved. The proof-of-concept device has been demonstrated on a Silicon-on-Insulator (SOI) platform through electron beam lithography and Reactive Ion Etching (RIE) process. The transmission spectrum shows narrow band single wavelength selection and switching property with a high Free Spectral Range (FSR) ∼60 nm and side band rejection ratio >15 dB.

  15. Electron correlations in narrow band systems

    International Nuclear Information System (INIS)

    Kishore, R.

    1983-01-01

    The effect of the electron correlations in narrow bands, such as d(f) bands in the transition (rare earth) metals and their compounds and the impurity bands in doped semiconductors is studied. The narrow band systems is described, by the Hubbard Hamiltonian. By proposing a local self-energy for the interacting electron, it is found that the results are exact in both atomic and band limits and reduce to the Hartree Fock results for U/Δ → 0, where U is the intra-atomic Coulomb interaction and Δ is the bandwidth of the noninteracting electrons. For the Lorentzian form of the density of states of the noninteracting electrons, this approximation turns out to be equivalent to the third Hubbard approximation. A simple argument, based on the mean free path obtained from the imaginary part of the self energy, shows how the electron correlations can give rise to a discontinous metal-nonmetal transition as proposed by Mott. The band narrowing and the existence of the satellite below the Fermi energy in Ni, found in photoemission experiments, can also be understood. (Author) [pt

  16. Ultra high resolution tomography

    Energy Technology Data Exchange (ETDEWEB)

    Haddad, W.S.

    1994-11-15

    Recent work and results on ultra high resolution three dimensional imaging with soft x-rays will be presented. This work is aimed at determining microscopic three dimensional structure of biological and material specimens. Three dimensional reconstructed images of a microscopic test object will be presented; the reconstruction has a resolution on the order of 1000 A in all three dimensions. Preliminary work with biological samples will also be shown, and the experimental and numerical methods used will be discussed.

  17. ULTRA-LIGHTWEIGHT CEMENT

    International Nuclear Information System (INIS)

    Fred Sabins

    2001-01-01

    The objective of this project is to develop an improved ultra-lightweight cement using ultralight hollow glass spheres (ULHS). Work reported herein addresses Task 1: Assess Ultra-Lightweight Cementing Problems and Task 3: Test Ultra-Lightweight Cements. Results reported this quarter include a review and summary of Halliburton Energy Services (HES) and BJ Services historical performance data for lightweight cement applications. These data are analyzed and compared to ULHS cement and foamed cement performances. Similar data is expected from Schlumberger, and an analysis of this data will be completed in the following phases of the project. Quality control testing of materials used to formulate ULHS cements in the laboratory was completed to establish baseline material performance standards. A testing protocol was developed employing standard procedures as well as procedures tailored to evaluate ULHS and foamed cement. This protocol is presented and discussed. Results of further testing of ULHS cements are presented along with an analysis to establish cement performance design criteria to be used during the remainder of the project. Finally, a list of relevant literature on lightweight cement performance is compiled for review during the next quarter

  18. Pool Boiling CHF in Inclined Narrow Annuli

    International Nuclear Information System (INIS)

    Kang, Myeong Gie

    2010-01-01

    Pool boiling heat transfer has been studied extensively since it is frequently encountered in various heat transfer equipment. Recently, it has been widely investigated in nuclear power plants for application to the advanced light water reactors designs. Through the review on the published results it can be concluded that knowledge on the combined effects of the surface orientation and a confined space on pool boiling heat transfer is of great practical importance and also of great academic interest. Fujita et al. investigated pool boiling heat transfer, from boiling inception to the critical heat flux (CHF, q' CHF ), in a confined narrow space between heated and unheated parallel rectangular plates. They identified that both the confined space and the surface orientation changed heat transfer much. Kim and Suh changed the surface orientation angles of a downward heating rectangular channel having a narrow gap from the downward-facing position (180 .deg.) to the vertical position (90 .deg.). They observed that the CHF generally decreased as the inclination angle (θ ) increased. Yao and Chang studied pool boiling heat transfer in a confined heat transfer for vertical narrow annuli with closed bottoms. They observed that when the gap size ( s ) of the annulus was decreased the effect of space confinement to boiling heat transfer increased. The CHF was occurred at much lower value for the confined space comparing to the unconfined pool boiling. Pool boiling heat transfer in narrow horizontal annular crevices was studied by Hung and Yao. They concluded that the CHF decreased with decreasing gap size of the annuli and described the importance of the thin film evaporation to explain the lower CHF of narrow crevices. The effect of the inclination angle on the CHF on countercurrent boiling in an inclined uniformly heated tube with closed bottoms was also studied by Liu et al. They concluded that the CHF reduced with the inclination angle decrease. A study was carried out

  19. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

    2004-02-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

  20. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    International Nuclear Information System (INIS)

    Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

    2004-01-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

  1. Compact temperature-insensitive modulator based on a silicon microring assistant Mach—Zehnder interferometer

    International Nuclear Information System (INIS)

    Zhang Xue-Jian; Feng Xue; Zhang Deng-Ke; Huang Yi-Dong

    2012-01-01

    On the silicon-on-insulator platform, an ultra compact temperature-insensitive modulator based on a cascaded microring assistant Mach—Zehnder interferometer is proposed and demonstrated with numerical simulation. According to the calculated results, the tolerated variation of ambient temperature can be as high as 134 °C while the footprint of such a silicon modulator is only 340 μm 2 . (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  2. Cervical spinal canal narrowing in idiopathic syringomyelia

    International Nuclear Information System (INIS)

    Struck, Aaron F.; Carr, Carrie M.; Shah, Vinil; Hesselink, John R.; Haughton, Victor M.

    2016-01-01

    The cervical spine in Chiari I patient with syringomyelia has significantly different anteroposterior diameters than it does in Chiari I patients without syringomyelia. We tested the hypothesis that patients with idiopathic syringomyelia (IS) also have abnormal cervical spinal canal diameters. The finding in both groups may relate to the pathogenesis of syringomyelia. Local institutional review boards approved this retrospective study. Patients with IS were compared to age-matched controls with normal sagittal spine MR. All subjects had T1-weighted spin-echo (500/20) and T2-weighted fast spin-echo (2000/90) sagittal cervical spine images at 1.5 T. Readers blinded to demographic data and study hypothesis measured anteroposterior diameters at each cervical level. The spinal canal diameters were compared with a Mann-Whitney U test. The overall difference was assessed with a Friedman test. Seventeen subjects were read by two reviewers to assess inter-rater reliability. Fifty IS patients with 50 age-matched controls were studied. IS subjects had one or more syrinxes varying from 1 to 19 spinal segments. Spinal canal diameters narrowed from C1 to C3 and then enlarged from C5 to C7 in both groups. Diameters from C2 to C4 were narrower in the IS group (p < 0.005) than in controls. The ratio of the C3 to the C7 diameters was also smaller (p = 0.004) in IS than controls. Collectively, the spinal canal diameters in the IS were significantly different from controls (Friedman test p < 0.0001). Patients with IS have abnormally narrow upper and mid cervical spinal canal diameters and greater positive tapering between C3 and C7. (orig.)

  3. Cervical spinal canal narrowing in idiopathic syringomyelia

    Energy Technology Data Exchange (ETDEWEB)

    Struck, Aaron F. [Massachusetts General Hospital, Department of Neurology, Boston, MA (United States); Carr, Carrie M. [Mayo Clinic, Department of Radiology, Rochester, MN (United States); Shah, Vinil [University of California San Francisco, Department of Radiology, San Francisco, CA (United States); Hesselink, John R. [University of California San Diego, Department of Radiology, San Diego, CA (United States); Haughton, Victor M. [University of Wisconsin, Department of Radiology, Madison, WI (United States)

    2016-08-15

    The cervical spine in Chiari I patient with syringomyelia has significantly different anteroposterior diameters than it does in Chiari I patients without syringomyelia. We tested the hypothesis that patients with idiopathic syringomyelia (IS) also have abnormal cervical spinal canal diameters. The finding in both groups may relate to the pathogenesis of syringomyelia. Local institutional review boards approved this retrospective study. Patients with IS were compared to age-matched controls with normal sagittal spine MR. All subjects had T1-weighted spin-echo (500/20) and T2-weighted fast spin-echo (2000/90) sagittal cervical spine images at 1.5 T. Readers blinded to demographic data and study hypothesis measured anteroposterior diameters at each cervical level. The spinal canal diameters were compared with a Mann-Whitney U test. The overall difference was assessed with a Friedman test. Seventeen subjects were read by two reviewers to assess inter-rater reliability. Fifty IS patients with 50 age-matched controls were studied. IS subjects had one or more syrinxes varying from 1 to 19 spinal segments. Spinal canal diameters narrowed from C1 to C3 and then enlarged from C5 to C7 in both groups. Diameters from C2 to C4 were narrower in the IS group (p < 0.005) than in controls. The ratio of the C3 to the C7 diameters was also smaller (p = 0.004) in IS than controls. Collectively, the spinal canal diameters in the IS were significantly different from controls (Friedman test p < 0.0001). Patients with IS have abnormally narrow upper and mid cervical spinal canal diameters and greater positive tapering between C3 and C7. (orig.)

  4. Towards neuromorphic electronics: Memristors on foldable silicon fabric

    KAUST Repository

    Ghoneim, Mohamed T.

    2014-11-01

    The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex\\'s folded pattern for ultra-compact design.

  5. Volume dips; spot price ranges narrow

    International Nuclear Information System (INIS)

    Anon.

    1994-01-01

    This article is the September 1994 uranium market summary. Volume in the spot concentrates market fell below 1 million lbs U3O8. In total, twelve deals took place compared to 28 deals in August. Of the twelve deals, three took place in the spot concentrates market, two took place in the medium and long-term market, three in the conversion market, and four in the enrichment market. Restricted prices weakened, but unrestricted prices firmed slightly. The enrichment price range narrowed a bit

  6. f-band narrowing in uranium intermetallics

    International Nuclear Information System (INIS)

    Dunlap, B.D.; Litterst, F.J.; Malik, S.K.; Kierstead, H.A.; Crabtree, G.W.; Kwok, W.; Lam, D.J.; Mitchell, A.W.

    1987-01-01

    Although the discovery of heavy fermion behavior in uranium compounds has attracted a great deal of attention, relatively little work has been done which is sufficiently systematic to allow an assessment of the relationship of such behavior to more common phenomena, such as mixed valence, narrow-band effects, etc. In this paper we report bulk property measurements for a number of alloys which form a part of such a systematic study. The approach has been to take relatively simple and well-understood materials and alter their behavior by alloying to produce heavy fermion or Kondo behavior in a controlled way

  7. Itinerant ferromagnetism in the narrow band limit

    CERN Document Server

    Liu, S H

    2000-01-01

    It is shown that in the narrow band, strong interaction limit the paramagnetic state of an itinerant ferromagnet is described by the disordered local moment state. As a result, the Curie temperature is orders of magnitude lower than what is expected from the large exchange splitting of the spin bands. An approximate analysis has also been carried out for the partially ordered state, and the result explains the temperature evolvement of the magnetic contributions to the resistivity and low-energy optical conductivity of CrO sub 2.

  8. Critical unpairing currents in narrow niobium films

    International Nuclear Information System (INIS)

    Gershenzon, M.E.; Gubankov, V.N.

    1979-01-01

    Investigated are the dependences of critical currents of narrow ( with the width of W=0.5-15 μm) superconducting niobium films on temperature and a magnetic field. The proposed method of film production with the width of the 1μm order and with small edge inhomogeneities ((<=500 A) permitted to realize the Ginsburg-Landau unpairing currents in the wide range of temperatures. The correct comparison with the theory showed that the unpairing currents are observed if W(< or approximately) 2delta, where delta is the effective depth of the penetration of the perpendicular magnetic field

  9. Narrow electron injector for ballistic electron spectroscopy

    International Nuclear Information System (INIS)

    Kast, M.; Pacher, C.; Strasser, G.; Gornik, E.

    2001-01-01

    A three-terminal hot electron transistor is used to measure the normal energy distribution of ballistic electrons generated by an electron injector utilizing an improved injector design. A triple barrier resonant tunneling diode with a rectangular transmission function acts as a narrow (1 meV) energy filter. An asymmetric energy distribution with its maximum on the high-energy side with a full width at half maximum of ΔE inj =10 meV is derived. [copyright] 2001 American Institute of Physics

  10. Narrow-Bicliques: Cryptanalysis of Full IDEA

    DEFF Research Database (Denmark)

    Khovratovich, D.; Leurent, G.; Rechberger, C.

    2012-01-01

    We apply and extend the recently introduced biclique framework to IDEA and for the first time describe an approach to noticeably speed-up key-recovery for the full 8.5 round IDEA.We also show that the biclique approach to block cipher cryptanalysis not only obtains results on more rounds, but also...... extended with ways to allow for a significantly reduced data complexity with everything else being equal. For this we use available degrees of freedom as known from hash cryptanalysis to narrow the relevant differential trails. Our cryptanalysis is of high computational complexity, and does not threaten...

  11. Silicon: electrochemistry and luminescence

    NARCIS (Netherlands)

    Kooij, Ernst Stefan

    1997-01-01

    The electrochemistry of crystalline and porous silicon and the luminescence from porous silicon has been studied. One chapter deals with a model for the anodic dissolution of silicon in HF solution. In following chapters both the electrochemistry and various ways of generating visible

  12. Fabrication of Ultra-thin Color Films with Highly Absorbing Media Using Oblique Angle Deposition.

    Science.gov (United States)

    Yoo, Young Jin; Lee, Gil Ju; Jang, Kyung-In; Song, Young Min

    2017-08-29

    Ultra-thin film structures have been studied extensively for use as optical coatings, but performance and fabrication challenges remain.  We present an advanced method for fabricating ultra-thin color films with improved characteristics. The proposed process addresses several fabrication issues, including large area processing. Specifically, the protocol describes a process for fabricating ultra-thin color films using an electron beam evaporator for oblique angle deposition of germanium (Ge) and gold (Au) on silicon (Si) substrates.  Film porosity produced by the oblique angle deposition induces color changes in the ultra-thin film. The degree of color change depends on factors such as deposition angle and film thickness. Fabricated samples of the ultra-thin color films showed improved color tunability and color purity. In addition, the measured reflectance of the fabricated samples was converted into chromatic values and analyzed in terms of color. Our ultra-thin film fabricating method is expected to be used for various ultra-thin film applications such as flexible color electrodes, thin film solar cells, and optical filters. Also, the process developed here for analyzing the color of the fabricated samples is broadly useful for studying various color structures.

  13. Silicon microspheres for near-IR communication applications

    International Nuclear Information System (INIS)

    Serpengüzel, Ali; Demir, Abdullah

    2008-01-01

    We have performed transverse electric and transverse magnetic polarized elastic light scattering calculations at 90° and 0° in the o-band at 1.3 µm for a 15 µm radius silicon microsphere with a refractive index of 3.5. The quality factors are on the order of 10 7 and the mode/channel spacing is 7 nm, which correlate well with the refractive index and the optical size of the microsphere. The 90° elastic light scattering can be used to monitor a dropped channel (drop port), whereas the 0° elastic scattering can be used to monitor the transmission channel (through port). The optical resonances of the silicon microspheres provide the necessary narrow linewidths that are needed for high-resolution optical communication applications. Potential telecommunication applications include filters, modulators, switches, wavelength converters, detectors, amplifiers and light sources. Silicon microspheres show promise as potential building blocks for silicon-based electrophotonic integration

  14. Ultra-precision bearings

    CERN Document Server

    Wardle, F

    2015-01-01

    Ultra-precision bearings can achieve extreme accuracy of rotation, making them ideal for use in numerous applications across a variety of fields, including hard disk drives, roundness measuring machines and optical scanners. Ultraprecision Bearings provides a detailed review of the different types of bearing and their properties, as well as an analysis of the factors that influence motion error, stiffness and damping. Following an introduction to basic principles of motion error, each chapter of the book is then devoted to the basic principles and properties of a specific type of bearin

  15. Dosimetry of narrow band UVB treatments

    International Nuclear Information System (INIS)

    Goode, D.H.; Mannering, D.M.

    1996-01-01

    Full text: For many years psoriasis has been treated with broad band UVB lamps. These lamps have a bell shaped spectrum which peaks at 305 nm and extends from 280 nm to 350 nm. However research with monochromatic UV radiation has shown that wavelengths between 300 nm and 320 nm are the most efficacious for clearing psoriasis while wavelengths below 305 nm are most effective for producing the undesirable side effect of erythema (sunburn). In response to these findings Philips developed a narrow band UVB tube in which a large fraction of the output was confined to a narrow peak (bandwidth 2.5 nm) situated at 311 nm. Christchurch Hospital replaced broad band UVB with narrow band treatments in August 1995 and as this required UV exposures to be substantially increased new protocols had to be developed. Three aspects needed to be addressed. These were translating the dose from broad band to narrow band for current patients, determining the initial dose for new patients and developing a formula for increasing subsequent exposures to both types of patient. To translate doses the spectral irradiance (μW/cm 2 /nm) that would fall on the patient was measured in both the old broad band and the new narrow band treatment units and from this UV doses were calculated. All doses were expressed in mJ/cm 2 of unweighted UV over the range 250 nm to 400 nm. The erythemal effectiveness of the two units were compared by using the CIE 1987 curve to express doses in terms of the equivalent exposure of monochromatic 297 nm radiation. It was found that an exposure of 3.96 mJ/cm 2 from the broad band FS40 tubes and 12.79 mJ/cm 2 from the narrow band TL/01 tubes were both equivalent to 1.00 mJ/cm 2 of monochromatic 297 nm radiation so when transferring patients all broad band doses needed to be increased by a factor of 3.2. Before transferring any patients this factor was confirmed by conducting two minimal erythema dose (MED) tests on a normal subject, one in each unit. For new patients a

  16. A methodology to enlarge narrow stability windows

    Energy Technology Data Exchange (ETDEWEB)

    Araujo, Ewerton M.P.; Pastor, Jorge A.S.C.; Fontoura, Sergio A.B. [Pontificia Univ. Catolica do Rio de Janeiro (PUC-Rio), RJ (Brazil). Dept. de Engenharia Civil. Grupo de Tecnologia e Engenharia de Petroleo

    2004-07-01

    The stability window in a wellbore design is defined by the difference between fracture pressure and collapse pressure. Deep water environments typically present narrow stability windows, because rocks have low strength due to under-compaction process. Often also, horizontal wells are drilled to obtain a better development of reservoirs placed in thin layers of sandstone. In this scenario, several challenges are faced when drilling in deep water. The traditional approach for predicting instabilities is to determine collapses and fractures at borehole wall. However, the initiation of rupture does not indicate that the borehole fails to perform its function as a wellbore. Thus, a methodology in which the stability window may be enlarged is desirable. This paper presents one practical analytical methodology that consists in allowing wellbore pressures smaller than the conventional collapse pressure, i.e., based upon failure on the borehole wall. This means that a collapse region (shear failure) will be developed around the borehole wall. This collapse region is pre-defined and to estimate its size is used a failure criterion. The aforementioned methodology is implemented in a user-friendly software, which can perform analyses of stress, pore pressure, formation failure, mud weight and mud salinity design for drilling in shale formations. Simulations of a wellbore drilling in a narrow stability window environment are performed to demonstrate the improvements of using the methodology. (author)

  17. Narrow resonances and short-range interactions

    International Nuclear Information System (INIS)

    Gelman, Boris A.

    2009-01-01

    Narrow resonances in systems with short-range interactions are discussed in an effective field theory (EFT) framework. An effective Lagrangian is formulated in the form of a combined expansion in powers of a momentum Q 0 | 0 --a resonance peak energy. At leading order in the combined expansion, a two-body scattering amplitude is the sum of a smooth background term of order Q 0 and a Breit-Wigner term of order Q 2 (δε) -1 which becomes dominant for δε 3 . Such an EFT is applicable to systems in which short-distance dynamics generates a low-lying quasistationary state. The EFT is generalized to describe a narrow low-lying resonance in a system of charged particles. It is shown that in the case of Coulomb repulsion, a two-body scattering amplitude at leading order in a combined expansion is the sum of a Coulomb-modified background term and a Breit-Wigner amplitude with parameters renormalized by Coulomb interactions.

  18. Optical properties of vacuum deposited polyaniline ultra-thin film

    International Nuclear Information System (INIS)

    Wahab, M. R. A.; Din, M.; Yunus, W. M. M.; Hasan, Z. A.; Kasim, A.

    2005-01-01

    Full text: Ultra-thin films of emeraldine base (EB) and emeraldine salt (ES) form of polyaniline (PANi) were prepared using electron-gun vacuum deposition. Thickness range studied was between 100AA and 450AA. Dielectric permittivity of the films determined from Kretchmann Configuration Surface Plasmon Resonance (SPR) angles-scanning set-up show shifts and narrowing of the SPR dip. Absorbance spectra of S-polarized and P-polarized light show the aging effect on orientation of the film. The effect of aging on its conductivity and photoluminescence is also correlated to the surface morphology

  19. Silicon heterojunction transistor

    International Nuclear Information System (INIS)

    Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

    1979-01-01

    SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

  20. The chemistry of silicon

    CERN Document Server

    Rochow, E G; Emeléus, H J; Nyholm, Ronald

    1975-01-01

    Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving s

  1. Silicon Microspheres Photonics

    International Nuclear Information System (INIS)

    Serpenguzel, A.

    2008-01-01

    Electrophotonic integrated circuits (EPICs), or alternatively, optoelectronic integrated circuit (OEICs) are the natural evolution of the microelectronic integrated circuit (IC) with the addition of photonic capabilities. Traditionally, the IC industry has been based on group IV silicon, whereas the photonics industry on group III-V semiconductors. However, silicon based photonic microdevices have been making strands in siliconizing photonics. Silicon microspheres with their high quality factor whispering gallery modes (WGMs), are ideal candidates for wavelength division multiplexing (WDM) applications in the standard near-infrared communication bands. In this work, we will discuss the possibility of using silicon microspheres for photonics applications in the near-infrared

  2. Production ultra propre

    CERN Document Server

    Morvan, Gilles

    2011-01-01

    L'ultra propreté se caractérise par l'absence de particules et la maîtrise de la contamination dans un environnement défini. Largement appliquée dans diverses industries (pharmacie, cosmétiques, dispositifs médicaux, chimie fine, biotechnologies, électronique et secteurs de pointe, agroalimentaire, plasturgie…), la technicité dans ce domaine est élevée, car principalement liée à la maîtrise des différentes sources de contaminations (eau, air ambiant, fluides, etc.). Véritable guide pratique, cet ouvrage détaille les points techniques essentiels pour permettre à l’ingénieur de trouver des solutions adéquates à chaque type de projet. La démarche passe par la rédaction de spécifications rigoureuses pour : - l’eau, essentielle à toutes productions, - les équipements de production ultra propre, - la démarche qualité et environnementale, - la démarche de suivi du projet.

  3. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  4. Analysis of narrow effects in pp annihilations

    CERN Document Server

    Defoix, C

    1972-01-01

    The author describes briefly some methods of analysis that final states involving a number of like particles require. A first method consists of separating two competing channels to minimize the reflections due to the undesirable one. Later techniques of analysis lead to the isolation of the only channel of interest and circumvention of the problems of background and reflections due to irrelevant final states. Generally, all these processes are based on the presence of a narrow and identified resonance, for example the eta /sup 0/ or omega /sup 0/ ( to pi /sup +/ pi /sup -/ pi /sup 0/). To be efficient, it is necessary that the observed width of such a basic resonance not be increased too much by experimental errors. (6 refs).

  5. Search for narrow four-baryon states

    International Nuclear Information System (INIS)

    Badelek, B.

    1981-01-01

    Highly excited (4.10 2 ) four-baryon resonances have been searched for in the missing-mass spectrum of the reaction π - + 4 He → π - + X at 5 GeV/c in the region of small four-momentum transfer (0.005 2 ), where one of the decay products of the X is either proton or deuteron or triton. No resonance signal is seen in the mass spectrum of X. Within our limited acceptance, the cross section for the production of a narrow (GAMMA approx. 20 MeV/c 2 ) four-baryon state with mass 4.9 GeV/c 2 is estimated to be smaller than approx. 100 nb. (orig.)

  6. Active Brownian motion in a narrow channel

    Science.gov (United States)

    Ao, X.; Ghosh, P. K.; Li, Y.; Schmid, G.; Hänggi, P.; Marchesoni, F.

    2014-12-01

    We review recent advances in rectification control of artificial microswimmers, also known as Janus particles, diffusing along narrow, periodically corrugated channels. The swimmer self-propulsion mechanism is modeled so as to incorporate a nonzero torque (propulsion chirality). We first summarize the effects of chirality on the autonomous current of microswimmers freely diffusing in channels of different geometries. In particular, left-right and upside-down asymmetric channels are shown to exhibit different transport properties. We then report new results on the dependence of the diffusivity of chiral microswimmers on the channel geometry and their own self-propulsion mechanism. The self-propulsion torque turns out to play a key role as a transport control parameter.

  7. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  8. Large-Signal Injection-Level Spectroscopy of Impurities in Silicon

    International Nuclear Information System (INIS)

    Ahrenkiel, R.K.; Johnston, S.W.

    1998-01-01

    Deep level defects in silicon are identified by measuring the recombination lifetime as a function of the injection level. The basic models for recombination at deep and shallow centers is developed. The defect used for the theoretical model is the well-known interstitial Fe ion in silicon. Data are presented on silicon samples ranging in defect content from intentionally Fe-doped samples to an ultra-pure float-zone grown sample. These data are analyzed in terms of the injection-level spectroscopy model

  9. The effect of narrow provider networks on health care use.

    Science.gov (United States)

    Atwood, Alicia; Lo Sasso, Anthony T

    2016-12-01

    Network design is an often overlooked aspect of health insurance contracts. Recent policy factors have resulted in narrower provider networks. We provide plausibly causal evidence on the effect of narrow network plans offered by a large national health insurance carrier in a major metropolitan market. Our econometric design exploits the fact that some firms offer a narrow network plan to their employees and some do not. Our results show that narrow network health plans lead to reductions in health care utilization and spending. We find evidence that narrow networks save money by selecting lower cost providers into the network. Copyright © 2016 Elsevier B.V. All rights reserved.

  10. Fabrication of the GLAST Silicon Tracker Readout Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Baldini, Luca; Brez, Alessandro; Himel, Thomas; Johnson, R.P.; Latronico, Luca; Minuti, Massimo; Nelson, David; Sadrozinski, H.F.-W.; Sgro, Carmelo; Spandre, Gloria; Sugizaki, Mutsumi; Tajima, Hiro; Cohen Tanugi, Johann; Young, Charles; Ziegler, Marcus; /Pisa U. /INFN, Pisa /SLAC /UC, Santa Cruz

    2006-03-03

    A unique electronics system has been built and tested for reading signals from the silicon-strip detectors of the Gamma-ray Large Area Space Telescope mission. The system amplifies and processes signals from 884,736 36-cm long silicon strips in a 4 x 4 array of tower modules. An aggressive mechanical design fits the readout electronics in narrow spaces between the tower modules, to minimize dead area. This design and the resulting departures from conventional electronics packaging led to several fabrication challenges and lessons learned. This paper describes the fabrication processes and how the problems peculiar to this design were overcome.

  11. Low-Power Silicon-based Thermal Sensors and Actuators for Chemical Applications

    NARCIS (Netherlands)

    Vereshchagina, E.

    2011-01-01

    In the Hot Silicon project low and ultra-low-power Si-based hot surface devices have been developed, i.e. thermal sensors and actuators, for application in catalytic gas micro sensors, micro- and nano- calorimeters. This work include several scientific and technological aspects: • Design and

  12. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.; Almuslem, A. S.; Gumus, Abdurrahman; Hussain, Aftab M.; Hussain, Aftab M.; Cruz, Melvin; Hussain, Muhammad Mustafa

    2016-01-01

    shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using

  13. IC Compatible Wafer Level Fabrication of Silicon Nanowire Field Effect Transistors for Biosensing Applications

    NARCIS (Netherlands)

    Moh, T.S.Y.

    2013-01-01

    In biosensing, nano-devices such as Silicon Nanowire Field Effect Transistors (SiNW FETs) are promising components/sensors for ultra-high sensitive detection, especially when samples are low in concentration or a limited volume is available. Current processing of SiNW FETs often relies on expensive

  14. Specific and reversible immobilization of histidine-tagged proteins on functionalized silicon nanowires

    DEFF Research Database (Denmark)

    Liu, Yi-Chi; Rieben, Nathalie Ines; Iversen, Lars

    2010-01-01

    Silicon nanowire (Si NW)-based field effect transistors (FETs) have shown great potential as biosensors (bioFETs) for ultra-sensitive and label-free detection of biomolecular interactions. Their sensitivity depends not only on the device properties, but also on the function of the biological reco...

  15. Ultrathin silicon solar cells with enhanced photocurrents assisted by plasmonic nanostructures

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Stassen, Erik; Mortensen, N. Asger

    2012-01-01

    Thin-film photovoltaics offers the potential for a significant cost reduction compared to traditional photovoltaics. However, the performance of thin-film solar cells is limited by poor light absorption. We have devised an ultra-thin-film silicon solar cell configuration assisted by plasmonic nan...

  16. Observation of soliton compression in silicon photonic crystals

    Science.gov (United States)

    Blanco-Redondo, A.; Husko, C.; Eades, D.; Zhang, Y.; Li, J.; Krauss, T.F.; Eggleton, B.J.

    2014-01-01

    Solitons are nonlinear waves present in diverse physical systems including plasmas, water surfaces and optics. In silicon, the presence of two photon absorption and accompanying free carriers strongly perturb the canonical dynamics of optical solitons. Here we report the first experimental demonstration of soliton-effect pulse compression of picosecond pulses in silicon, despite two photon absorption and free carriers. Here we achieve compression of 3.7 ps pulses to 1.6 ps with photonic crystal waveguide and an ultra-sensitive frequency-resolved electrical gating technique to detect the ultralow energies in the nanostructured device. Strong agreement with a nonlinear Schrödinger model confirms the measurements. These results further our understanding of nonlinear waves in silicon and open the way to soliton-based functionalities in complementary metal-oxide-semiconductor-compatible platforms. PMID:24423977

  17. Nanoparticle production in arc generated fireballs of granular silicon powder

    Directory of Open Access Journals (Sweden)

    Tsuyohito Ito

    2012-03-01

    Full Text Available Recently we observed buoyant fireballs by arc igniting silicon that drift in air for several seconds and postulated that the low aggregate density was attributed to the formation of a network of nanoparticles that must completely surround the burning silicon core, trapping the heated vapor generated as a result of particle combustion [Ito et al. Phys Rev E 80, 067401 (2009]. In this paper, we describe the capturing of several of these fireballs in flight, and have characterized their nanostructure by high resolution microscopy. The nanoparticle network is found to have an unusually high porosity (> 99%, suggesting that this arc-ignition of silicon can be a novel method of producing ultra-porous silica. While we confirm the presence of a nanoparticle network within the fireballs, the extension of this mechanism to the production of ball lightning during atmospheric lightning strikes in nature is still the subject of ongoing debate.

  18. Design criteria for XeF{sub 2} enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    Energy Technology Data Exchange (ETDEWEB)

    Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad M., E-mail: muhammadmustafa.hussain@kaust.edu.sa [Integrated Nanotechnology Laboratory (INL) and Integrated Disruptive Electronics Applications (IDEA) Laboratory, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology - KAUST, Thuwal 23955-6900 (Saudi Arabia)

    2016-07-15

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF{sub 2}) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  19. Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    KAUST Repository

    Hussain, Aftab M.

    2016-07-15

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  20. Design criteria for XeF2 enabled deterministic transformation of bulk silicon (100) into flexible silicon layer

    KAUST Repository

    Hussain, Aftab M.; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

    2016-01-01

    Isotropic etching of bulk silicon (100) using Xenon Difluoride (XeF2) gas presents a unique opportunity to undercut and release ultra-thin flexible silicon layers with pre-fabricated state-of-the-art Complementary Metal Oxide Semiconductor (CMOS) electronics. In this work, we present design criteria and mechanism with a comprehensive mathematical model for this method. We consider various trench geometries and parametrize important metrics such as etch time, number of cycles and area efficiency in terms of the trench diameter and spacing so that optimization can be done for specific applications. From our theoretical analysis, we conclude that a honeycomb-inspired hexagonal distribution of trenches can produce the most efficient release of ultra-thin flexible silicon layers in terms of the number of etch cycles, while a rectangular distribution of circular trenches provides the most area efficient design. The theoretical results are verified by fabricating and releasing (varying sizes) flexible silicon layers. We observe uniform translation of design criteria into practice for etch distances and number of etch cycles, using reaction efficiency as a fitting parameter.

  1. Chemistry of the copper silicon interface

    International Nuclear Information System (INIS)

    Ford, M.J.; Sashin, V.A.; Nixon, K.

    2002-01-01

    Full text: Copper and silicon readily interdiffuse, even at room temperature, to form an interface which can be several nanometers thick. Over the years considerable effort has gone into investigating the diffusion process and chemical nature of the interface formed. Photoemission measurements give evidence for the formation of a stable suicide with a definite stoichiometry, Cu 3 Si. This is evidenced by splitting of the Si LVV Auger line and slight shifts and change in shape of the copper valence band density of states as measured by ultra-violet photoemission. In this paper we present calculations of the electronic structure of copper suicide, bulk copper and silicon, and preliminary measurements of the interface by electron momentum spectroscopy. Densities of states for copper and copper suicide are dominated by the copper 3d bands, and difference between the two compounds are relatively small. By contrast, the full band structures are quite distinct. Hence, experimental measurements of the full band structure of the copper on silicon interface, for example by EMS, have the potential to reveal the chemistry of the interface in a detailed way

  2. Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser

    International Nuclear Information System (INIS)

    Akerman, Nitzan; Navon, Nir; Kotler, Shlomi; Glickman, Yinnon; Ozeri, Roee

    2015-01-01

    We report on the implementation of a high fidelity universal gate-set on optical qubits based on trapped 88 Sr + ions for the purpose of quantum information processing. All coherent operations were performed using a narrow linewidth diode laser. We employed a master-slave configuration for the laser, where an ultra low expansion glass Fabry–Perot cavity is used as a stable reference as well as a spectral filter. We characterized the laser spectrum using the ions with a modified Ramsey sequence which eliminated the affect of the magnetic field noise. We demonstrated high fidelity single qubit gates with individual addressing, based on inhomogeneous micromotion, on a two-ion chain as well as the Mølmer–Sørensen two-qubit entangling gate. (paper)

  3. New EB curing system for narrow web, using Min-EB

    International Nuclear Information System (INIS)

    Nakamura, Tetsuhisa; Tominaga, Hiroshi; Oizumi, Kei

    2003-01-01

    We, TOYO INK, developed the new equipment of EB curing system for narrow web composed of vacuum tube-type electron beam irradiation apparatus called Min-EB which is specialized with ultra-low voltage, 50-60 KV, and not damaging against the substrate. The new development is very small size, 66 cm width, 64 cm depth, 80 cm height and convenient to install into printing and coating machines. Several tubes, Min-EB, are assembled to be multi-tube module, called MTM, to easily handle. Basically we can change the irradiation width and printing and coating speed by increasing MTM due to the sheet size and printing and coating condition. We got good results, showing high density for the printed film, after used new EB curing system. (author)

  4. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    International Nuclear Information System (INIS)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

    2014-01-01

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

  5. Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

    2014-11-10

    High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

  6. TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

    Directory of Open Access Journals (Sweden)

    V. N. Kovalevsky

    2010-01-01

    Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

  7. Chiral silicon nanostructures

    International Nuclear Information System (INIS)

    Schubert, E.; Fahlteich, J.; Hoeche, Th.; Wagner, G.; Rauschenbach, B.

    2006-01-01

    Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [0 0 1] silicon substrates in a temperature range from room temperature to 475 deg. C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400 deg. C to 800 deg. C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800 deg. C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment

  8. Silicon web process development

    Science.gov (United States)

    Duncan, C. S.; Seidensticker, R. G.; Mchugh, J. P.; Skutch, M. E.; Driggers, J. M.; Hopkins, R. H.

    1981-01-01

    The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

  9. Properties of Narrow line Seyfert 1 galaxies

    Science.gov (United States)

    Rakshit, Suvendu; Stalin, Chelliah Subramonian; Chand, Hum; Zhang, Xue-Guang

    2018-04-01

    Narrow line Seyfert 1 (NLSy1) galaxies constitute a class of active galactic nuclei characterized by the full width at half maximum (FWHM) of the Hα broad emission line 10 pixel-1. A strong correlation between the Hα and Hα emission lines is found both in the FWHM and flux. The nuclear continuum luminosity is found to be strongly correlated with the luminosity of Hα, Hα and [O III] emission lines. The black hole mass in NLSy1 galaxies is lower compared to their broad line counterparts. Compared to BLSy1 galaxies, NLSy1 galaxies have a stronger FeII emission and a higher Eddington ratio that place them in the extreme upper right corner of the R4570 - λEdd diagram. The distribution of the radio-loudness parameter (R) in NLSy1 galaxies drops rapidly at R>10 compared to the BLSy1 galaxies that have powerful radio jets. The soft X-ray photon index in NLSy1 galaxies is on average higher (2.9 ± 0.9) than BLSy1 galaxies (2.4 ± 0.8). It is anti-correlated with the Hα width but correlated with the FeII strength. NLSy1 galaxies on average have a lower amplitude of optical variability compared to their broad lines counterparts. These results suggest Eddington ratio as the main parameter that drives optical variability in these sources.

  10. Thermoelectricity in correlated narrow-gap semiconductors

    Science.gov (United States)

    Tomczak, Jan M.

    2018-05-01

    We review many-body effects, their microscopic origin, as well as their impact on thermoelectricity in correlated narrow-gap semiconductors. Members of this class—such as FeSi and FeSb2—display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie–Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators—such as Ce3Bi4Pt3 for which we present new results—and propose a general classification of paramagnetic insulators. From the latter, FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we explore new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

  11. Thermal tuning On narrow linewidth fiber laser

    Science.gov (United States)

    Han, Peiqi; Liu, Tianshan; Gao, Xincun; Ren, Shiwei

    2010-10-01

    At present, people have been dedicated to high-speed and large-capacity optical fiber communication system. Studies have been shown that optical wavelength division multiplexing (WDM) technology is an effective means of communication to increase the channel capacity. Tunable lasers have very important applications in high-speed, largecapacity optical communications, and distributed sensing, it can provide narrow linewidth and tunable laser for highspeed optical communication. As the erbium-doped fiber amplifier has a large gain bandwidth, the erbium-doped fiber laser can be achieved lasing wavelength tunable by adding a tunable filter components, so tunable filter device is the key components in tunable fiber laser.At present, fiber laser wavelength is tuned by PZT, if thermal wavelength tuning is combined with PZT, a broader range of wavelength tuning is appearance . Erbium-doped fiber laser is used in the experiments,the main research is the physical characteristics of fiber grating temperature-dependent relationship and the fiber grating laser wavelength effects. It is found that the fiber laser wavelength changes continuously with temperature, tracking several temperature points observed the self-heterodyne spectrum and found that the changes in spectra of the 3dB bandwidth of less than 1kHz, and therefore the fiber laser with election-mode fiber Bragg grating shows excellent spectral properties and wavelength stability.

  12. Ultra Low Concentration Adsorption Equilibria

    National Research Council Canada - National Science Library

    Mahle, John J; Buettner, Leonard C; LeVan, M. D; Schindler, Bryan J

    2006-01-01

    .... Specifically this work focuses on novel experimental and modeling methods to characterize and predict at ultra-low chemical vapor concentrations the protection afforded by adsorption-based vapor filtration systems...

  13. Fabrication of amorphous silicon nanoribbons by atomic force microscope tip-induced local oxidation for thin film device applications

    International Nuclear Information System (INIS)

    Pichon, L; Rogel, R; Demami, F

    2010-01-01

    We demonstrate the feasibility of induced local oxidation of amorphous silicon by atomic force microscopy. The resulting local oxide is used as a mask for the elaboration of a thin film silicon resistor. A thin amorphous silicon layer deposited on a glass substrate is locally oxidized following narrow continuous lines. The corresponding oxide line is then used as a mask during plasma etching of the amorphous layer leading to the formation of a nanoribbon. Such an amorphous silicon nanoribbon is used for the fabrication of the resistor

  14. Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

    Science.gov (United States)

    Zhang, Zhiwei; Chen, Pei; Qin, Fei; An, Tong; Yu, Huiping

    2018-05-01

    Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD) layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young's modulus, ultimate tensile strength (UTS), and strain at fracture is observed.

  15. Mechanical properties of silicon in subsurface damage layer from nano-grinding studied by atomistic simulation

    Directory of Open Access Journals (Sweden)

    Zhiwei Zhang

    2018-05-01

    Full Text Available Ultra-thin silicon wafer is highly demanded by semi-conductor industry. During wafer thinning process, the grinding technology will inevitably induce damage to the surface and subsurface of silicon wafer. To understand the mechanism of subsurface damage (SSD layer formation and mechanical properties of SSD layer, atomistic simulation is the effective tool to perform the study, since the SSD layer is in the scale of nanometer and hardly to be separated from underneath undamaged silicon. This paper is devoted to understand the formation of SSD layer, and the difference between mechanical properties of damaged silicon in SSD layer and ideal silicon. With the atomistic model, the nano-grinding process could be performed between a silicon workpiece and diamond tool under different grinding speed. To reach a thinnest SSD layer, nano-grinding speed will be optimized in the range of 50-400 m/s. Mechanical properties of six damaged silicon workpieces with different depths of cut will be studied. The SSD layer from each workpiece will be isolated, and a quasi-static tensile test is simulated to perform on the isolated SSD layer. The obtained stress-strain curve is an illustration of overall mechanical properties of SSD layer. By comparing the stress-strain curves of damaged silicon and ideal silicon, a degradation of Young’s modulus, ultimate tensile strength (UTS, and strain at fracture is observed.

  16. Periodically poled silicon

    Science.gov (United States)

    Hon, Nick K.; Tsia, Kevin K.; Solli, Daniel R.; Khurgin, Jacob B.; Jalali, Bahram

    2010-02-01

    Bulk centrosymmetric silicon lacks second-order optical nonlinearity χ(2) - a foundational component of nonlinear optics. Here, we propose a new class of photonic device which enables χ(2) as well as quasi-phase matching based on periodic stress fields in silicon - periodically-poled silicon (PePSi). This concept adds the periodic poling capability to silicon photonics, and allows the excellent crystal quality and advanced manufacturing capabilities of silicon to be harnessed for devices based on χ(2)) effects. The concept can also be simply achieved by having periodic arrangement of stressed thin films along a silicon waveguide. As an example of the utility, we present simulations showing that mid-wave infrared radiation can be efficiently generated through difference frequency generation from near-infrared with a conversion efficiency of 50% based on χ(2) values measurements for strained silicon reported in the literature [Jacobson et al. Nature 441, 199 (2006)]. The use of PePSi for frequency conversion can also be extended to terahertz generation. With integrated piezoelectric material, dynamically control of χ(2)nonlinearity in PePSi waveguide may also be achieved. The successful realization of PePSi based devices depends on the strength of the stress induced χ(2) in silicon. Presently, there exists a significant discrepancy in the literature between the theoretical and experimentally measured values. We present a simple theoretical model that produces result consistent with prior theoretical works and use this model to identify possible reasons for this discrepancy.

  17. Nonlinear silicon photonics

    Science.gov (United States)

    Tsia, Kevin K.; Jalali, Bahram

    2010-05-01

    An intriguing optical property of silicon is that it exhibits a large third-order optical nonlinearity, with orders-ofmagnitude larger than that of silica glass in the telecommunication band. This allows efficient nonlinear optical interaction at relatively low power levels in a small footprint. Indeed, we have witnessed a stunning progress in harnessing the Raman and Kerr effects in silicon as the mechanisms for enabling chip-scale optical amplification, lasing, and wavelength conversion - functions that until recently were perceived to be beyond the reach of silicon. With all the continuous efforts developing novel techniques, nonlinear silicon photonics is expected to be able to reach even beyond the prior achievements. Instead of providing a comprehensive overview of this field, this manuscript highlights a number of new branches of nonlinear silicon photonics, which have not been fully recognized in the past. In particular, they are two-photon photovoltaic effect, mid-wave infrared (MWIR) silicon photonics, broadband Raman effects, inverse Raman scattering, and periodically-poled silicon (PePSi). These novel effects and techniques could create a new paradigm for silicon photonics and extend its utility beyond the traditionally anticipated applications.

  18. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  19. Laterally inherently thin amorphous-crystalline silicon heterojunction photovoltaic cell

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Zahidur R., E-mail: zr.chowdhury@utoronto.ca; Kherani, Nazir P., E-mail: kherani@ecf.utoronto.ca [Department of Electrical and Computer Engineering, University of Toronto, 10 King' s College Road, Toronto, Ontario M5S 3G4 (Canada)

    2014-12-29

    This article reports on an amorphous-crystalline silicon heterojunction photovoltaic cell concept wherein the heterojunction regions are laterally narrow and distributed amidst a backdrop of well-passivated crystalline silicon surface. The localized amorphous-crystalline silicon heterojunctions consisting of the laterally thin emitter and back-surface field regions are precisely aligned under the metal grid-lines and bus-bars while the remaining crystalline silicon surface is passivated using the recently proposed facile grown native oxide–plasma enhanced chemical vapour deposited silicon nitride passivation scheme. The proposed cell concept mitigates parasitic optical absorption losses by relegating amorphous silicon to beneath the shadowed metallized regions and by using optically transparent passivation layer. A photovoltaic conversion efficiency of 13.6% is obtained for an untextured proof-of-concept cell illuminated under AM 1.5 global spectrum; the specific cell performance parameters are V{sub OC} of 666 mV, J{sub SC} of 29.5 mA-cm{sup −2}, and fill-factor of 69.3%. Reduced parasitic absorption, predominantly in the shorter wavelength range, is confirmed with external quantum efficiency measurement.

  20. Narrow Networks on the Individual Marketplace in 2017.

    Science.gov (United States)

    Polski, Daniel; Weiner, Janet; Zhang, Yuehan

    2017-09-01

    This Issue Brief describes the breadth of physician networks on the ACA marketplaces in 2017. We find that the overall rate of narrow networks is 21%, which is a decline since 2014 (31%) and 2016 (25%). Narrow networks are concentrated in plans sold on state-based marketplaces, at 42%, compared to 10% of plans on federally-facilitated marketplaces. Issuers that have traditionally offered Medicaid coverage have the highest prevalence of narrow network plans at 36%, with regional/local plans and provider-based plans close behind at 27% and 30%. We also find large differences in narrow networks by state and by plan type.

  1. Ultra wideband wireless body area networks

    CERN Document Server

    Thotahewa, Kasun Maduranga Silva; Yuce, Mehmet Rasit

    2014-01-01

    This book explores the design of ultra wideband (UWB) technology for wireless body-area networks (WBAN).  The authors describe a novel implementation of WBAN sensor nodes that use UWB for data transmission and narrow band for data reception, enabling low power sensor nodes, with high data rate capability.  The discussion also includes power efficient, medium access control (MAC) protocol design for UWB based WBAN applications and the authors present a MAC protocol in which a guaranteed delivery mechanism is utilized to transfer data with high priority.  Readers will also benefit from this book’s feasibility analysis of the UWB technology for human implant applications through the study of electromagnetic and thermal power absorption of human tissue that is exposed to UWB signals.   • Describes hardware platform development for IR-UWB based WBAN communication; • Discusses power efficient medium access control (MAC) protocol design for IR-UWB based WBAN applications; • Includes feasibility analy...

  2. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed

    2014-07-29

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  3. Silicon germanium mask for deep silicon etching

    KAUST Repository

    Serry, Mohamed; Rubin, Andrew; Refaat, Mohamed; Sedky, Sherif; Abdo, Mohammad

    2014-01-01

    Polycrystalline silicon germanium (SiGe) can offer excellent etch selectivity to silicon during cryogenic deep reactive ion etching in an SF.sub.6/O.sub.2 plasma. Etch selectivity of over 800:1 (Si:SiGe) may be achieved at etch temperatures from -80 degrees Celsius to -140 degrees Celsius. High aspect ratio structures with high resolution may be patterned into Si substrates using SiGe as a hard mask layer for construction of microelectromechanical systems (MEMS) devices and semiconductor devices.

  4. The equivalent width as a figure of merit for XPS narrow scans

    International Nuclear Information System (INIS)

    Singh, Bhupinder; Velázquez, Daniel; Terry, Jeff; Linford, Matthew R.

    2014-01-01

    Highlights: • We introduce a new figure of merit for XPS narrow scans: the equivalent width (EW XPS ). • EW XPS is less subjective and involves lesser user bias than traditional peak fitting. • EW XPS is responsive to changes in chemical states of materials. • EW XPS could be used for quality control and comparing spectra from similar samples. • EW XPS has the potential to be part of an expert software system for machine interpretation of spectra. - Abstract: X-ray Photoelectron Spectroscopy (XPS) is a widely used surface analytical tool that provides information about the near surface regions of materials. And while indispensable for XPS data analysis, peak fitting of narrow scans is often a fairly subjective exercise. Herein we introduce the equivalent width (EW) as an additional and less subjective figure of merit for XPS narrow scans. We believe that this parameter will prove particularly useful for analyzing series of similar or nominally identical spectra, perhaps as a component of an expert software system for the machine interpretation of spectra. It also appears to be useful, shedding light on the chemical state of materials, when additional information about a sample is known. The EW XPS is simply defined as the area of a narrow scan divided by the height of the maximum of its peak envelope. To limit any ambiguity in EW XPS for a series of spectra, we may also list the peak position of the maximum of the envelope (PE max ). The potential usefulness and limitations of the EW XPS and PE max parameters are demonstrated by their application to the narrow scans of: (i) four sets of ozone-treated carbon nanotubes (EW XPS ∼ 2.11–2.16 eV for a Shirley background, and up to 2.88 eV for no background, PE max ∼ 284.4–284.5 eV), (ii) a series of silicon wafers with different oxide thicknesses (EW XPS ∼ 1.5–2.8 eV, PE max ∼ 99–103 eV), (iii) hydrogen-terminated silicon before and after derivatization with pentyl groups, and after annealing of

  5. The equivalent width as a figure of merit for XPS narrow scans

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Bhupinder [Department of Chemistry and Biochemistry, C-100 BNSN, Brigham Young University, Provo, UT 84602 (United States); Velázquez, Daniel [Department of Physics, Illinois Institute of Technology, Chicago, IL 60616 (United States); Terry, Jeff, E-mail: terryj@iit.edu [Department of Physics, Illinois Institute of Technology, Chicago, IL 60616 (United States); Linford, Matthew R., E-mail: mrlinford@chem.byu.edu [Department of Chemistry and Biochemistry, C-100 BNSN, Brigham Young University, Provo, UT 84602 (United States)

    2014-12-15

    Highlights: • We introduce a new figure of merit for XPS narrow scans: the equivalent width (EW{sub XPS}). • EW{sub XPS} is less subjective and involves lesser user bias than traditional peak fitting. • EW{sub XPS} is responsive to changes in chemical states of materials. • EW{sub XPS} could be used for quality control and comparing spectra from similar samples. • EW{sub XPS} has the potential to be part of an expert software system for machine interpretation of spectra. - Abstract: X-ray Photoelectron Spectroscopy (XPS) is a widely used surface analytical tool that provides information about the near surface regions of materials. And while indispensable for XPS data analysis, peak fitting of narrow scans is often a fairly subjective exercise. Herein we introduce the equivalent width (EW) as an additional and less subjective figure of merit for XPS narrow scans. We believe that this parameter will prove particularly useful for analyzing series of similar or nominally identical spectra, perhaps as a component of an expert software system for the machine interpretation of spectra. It also appears to be useful, shedding light on the chemical state of materials, when additional information about a sample is known. The EW{sub XPS} is simply defined as the area of a narrow scan divided by the height of the maximum of its peak envelope. To limit any ambiguity in EW{sub XPS} for a series of spectra, we may also list the peak position of the maximum of the envelope (PE{sub max}). The potential usefulness and limitations of the EW{sub XPS} and PE{sub max} parameters are demonstrated by their application to the narrow scans of: (i) four sets of ozone-treated carbon nanotubes (EW{sub XPS} ∼ 2.11–2.16 eV for a Shirley background, and up to 2.88 eV for no background, PE{sub max} ∼ 284.4–284.5 eV), (ii) a series of silicon wafers with different oxide thicknesses (EW{sub XPS} ∼ 1.5–2.8 eV, PE{sub max} ∼ 99–103 eV), (iii) hydrogen-terminated silicon before

  6. Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, N. T., E-mail: bagraev@mail.ioffe.ru [St. Petersburg Polytechnic University (Russian Federation); Chernev, A. L. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation); Klyachkin, L. E. [St. Petersburg Polytechnic University (Russian Federation); Malyarenko, A. M. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation); Emel’yanov, A. K.; Dubina, M. V. [Russian Academy of Sciences, St. Petersburg Academic University—Nanotechnology Research and Education Center (Russian Federation)

    2016-10-15

    Planar silicon nanostructures that are formed as a very narrow silicon quantum well confined by δ barriers heavily doped with boron are used to study the dielectric properties of DNA oligonucleotides deposited onto the surface of the nanostructures. The capacitance characteristics of the silicon nanostructures with oligonucleotides deposited onto their surface are determined by recording the local tunneling current–voltage characteristics by means of scanning tunneling microscopy. The results show the possibility of identifying the local dielectric properties of DNA oligonucleotide segments consisting of repeating G–C pairs. These properties apparently give grounds to correlate the segments with polymer molecules exhibiting the properties of multiferroics.

  7. Experience on 3D silicon sensors for ATLAS IBL

    International Nuclear Information System (INIS)

    Darbo, G.

    2015-01-01

    3D silicon sensors, where plasma micro-machining is used to etch deep narrow apertures in the silicon substrate to form electrodes of PIN junctions, represent possible solutions for inner pixel layers of the tracking detectors in high energy physics experiments. This type of sensors has been developed for the Insertable B-Layer (IBL), an additional pixel layer that has been installed in ATLAS during the present shutdown of the LHC collider at CERN. It is presented here the experience in designing, testing and qualifying sensors and detector modules that have been used to equip part of the IBL. Based on the gained experience with 3D silicon sensors for the ATLAS IBL, we discuss possible new developments for the upgrade of ATLAS and CMS at the high-luminosity LHC (HL-LHC)

  8. Nonlinear resonance ultrasonic vibrations in Czochralski-silicon wafers

    Science.gov (United States)

    Ostapenko, S.; Tarasov, I.

    2000-04-01

    A resonance effect of generation of subharmonic acoustic vibrations is observed in as-grown, oxidized, and epitaxial silicon wafers. Ultrasonic vibrations were generated into a standard 200 mm Czochralski-silicon (Cz-Si) wafer using a circular ultrasound transducer with major frequency of the radial vibrations at about 26 kHz. By tuning frequency (f) of the transducer within a resonance curve, we observed a generation of intense f/2 subharmonic acoustic mode assigned as a "whistle." The whistle mode has a threshold amplitude behavior and narrow frequency band. The whistle is attributed to a nonlinear acoustic vibration of a silicon plate. It is demonstrated that characteristics of the whistle mode are sensitive to internal stress and can be used for quality control and in-line diagnostics of oxidized and epitaxial Cz-Si wafers.

  9. Fano resonances in heterogeneous dimers of silicon and gold nanospheres

    Science.gov (United States)

    Zhao, Qian; Yang, Zhong-Jian; He, Jun

    2018-06-01

    We theoretically investigate the optical properties of dimers consisting of a gold nanosphere and a silicon nanosphere. The absorption spectrum of the gold sphere in the dimer can be significantly altered and exhibits a pronounced Fano profile. Analytical Mie theory and numerical simulations show that the Fano profile is induced by constructive and destructive interference between the incident electric field and the electric field of the magnetic dipole mode of the silicon sphere in a narrow wavelength range. The effects of the silicon sphere size, distance between the two spheres, and excitation configuration on the optical responses of the dimers are studied. Our study reveals the coherent feature of the electric fields of magnetic dipole modes in dielectric nanostructures and the strong interactions of the coherent fields with other nanophotonic structures.

  10. INFLUENCE OF THE SILICON INTERLAYER ON DIAMOND-LIKE CARBON FILMS DEPOSITED ON GLASS SUBSTRATES

    Directory of Open Access Journals (Sweden)

    Deiler Antonio Lima Oliveira

    2012-06-01

    Full Text Available Diamond-like carbon (DLC films as a hard protective coating have achieved great success in a diversity of technological applications. However, adhesion of DLC films to substrates can restrict their applications. The influence of a silicon interlayer in order to improve DLC adhesion on glass substrates was investigated. Amorphous silicon interlayer and DLC films were deposited using plasma enhanced chemical vapor deposition from silane and methane, respectively. The bonding structure, transmittance, refraction index, and adherence of the films were also evaluated regarding the thickness of the silicon interlayer. Raman scattering spectroscopy did not show any substantial difference in DLC structure due to the interlayer thickness of the silicon. Optical measurements showed a sharp decrease of transmittance in the ultra-violet region caused by the fundamental absorption of the light. In addition, the absorption edge of transmittance shifted toward longer wavelength side in the ultra-violet region as the thickness of the silicon interlayer increased. The tribological results showed an increase of DLC adherence as the silicon interlayer increased, which was characterized by less cracks around the grooves.

  11. High-gain bipolar detector on float-zone silicon

    Science.gov (United States)

    Han, D. J.; Batignani, G.; Del Guerra, A.; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

    2003-10-01

    Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ˜7.77×10 4/s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device.

  12. High-gain bipolar detector on float-zone silicon

    International Nuclear Information System (INIS)

    Han, D.J.; Batignani, G.; Guerra, A.D.A. Del; Dalla Betta, G.-F.; Boscardin, M.; Bosisio, L.; Giorgi, M.; Forti, F.

    2003-01-01

    Since the float-zone (FZ) silicon has lower contaminations and longer minority-carrier lifetime than those in Czochralski silicon and other semiconductor materials, it has potential advantages to fabricate bipolar detectors on the high-purity FZ silicon substrate to achieve a high gain at ultra-low-signal levels. The authors present preliminary experimental results on a bipolar detector fabricated on an unusual high-purity FZ silicon substrate. A backside gettering layer of phosphorus-doped polysilicon was employed to preserve the long carrier lifetime of the high-purity FZ silicon. The device has been investigated in the detection of a continuous flux of X-ray and infrared light. The bipolar detector with a circular emitter of 2 mm diameter has demonstrated high gains up to 3820 for 22 keV X-ray from a 1 mCi Cd radioactive source (the X-ray photon flux, received by the detector is estimated to be ∼7.77x10 4 /s). High gain up to 4400 for 0.17 nW light with a wavelength of 0.83 μm has been observed for the same device

  13. Band engineering of amorphous silicon ruthenium thin film and its near-infrared absorption enhancement combined with nano-holes pattern on back surface of silicon substrate

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Anran; Zhong, Hao [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Li, Wei, E-mail: wli@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gu, Deen; Jiang, Xiangdong [School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Jiang, Yadong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2016-10-30

    Highlights: • The increase of Ru concentration leads to a narrower bandgap of a-Si{sub 1-x}Ru{sub x} thin film. • The absorption coefficient of a-Si{sub 1-x}Ru{sub x} is higher than that of SiGe. • A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} film and Si nano-holes layer is achieved. - Abstract: Silicon is widely used in semiconductor industry but has poor performance in near-infrared photoelectronic devices because of its bandgap limit. In this study, a narrow bandgap silicon rich semiconductor is achieved by introducing ruthenium (Ru) into amorphous silicon (a-Si) to form amorphous silicon ruthenium (a-Si{sub 1-x}Ru{sub x}) thin films through co-sputtering. The increase of Ru concentration leads to an enhancement of light absorption and a narrower bandgap. Meanwhile, a specific light trapping technique is employed to realize high absorption of a-Si{sub 1-x}Ru{sub x} thin film in a finite thickness to avoid unnecessary carrier recombination. A double-layer absorber comprising of a-Si{sub 1-x}Ru{sub x} thin film and silicon random nano-holes layer is formed on the back surface of silicon substrates, and significantly improves near-infrared absorption while the leaky light intensity is less than 5%. This novel absorber, combining narrow bandgap thin film with light trapping structure, may have a potential application in near-infrared photoelectronic devices.

  14. Q2 anti Q2 states with relatively narrow widths

    International Nuclear Information System (INIS)

    Ono, Seiji.

    1978-09-01

    Using the mass formulas which correctly predict the mass of mesons and baryons the mass of diquark states is computed. From this mass spectrum the existance of the observed narrow baryonia and wide baryonia can be naturally understood. Other relatively narrow Q 2 anti Q 2 states are predicted to exist. (orig.) [de

  15. Bayesian Face Recognition and Perceptual Narrowing in Face-Space

    Science.gov (United States)

    Balas, Benjamin

    2012-01-01

    During the first year of life, infants' face recognition abilities are subject to "perceptual narrowing", the end result of which is that observers lose the ability to distinguish previously discriminable faces (e.g. other-race faces) from one another. Perceptual narrowing has been reported for faces of different species and different races, in…

  16. Process for making silicon

    Science.gov (United States)

    Levin, Harry (Inventor)

    1987-01-01

    A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

  17. Hydrogen in amorphous silicon

    International Nuclear Information System (INIS)

    Peercy, P.S.

    1980-01-01

    The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

  18. Silicon pixel R&D for CLIC

    CERN Document Server

    AUTHOR|(SzGeCERN)718101

    2017-01-01

    The physics aims at the proposed future CLIC high-energy linear e+e− collider pose challenging demands on the performance of the vertex and tracking detector system. In particular the detectors have to be well adapted to the experimental conditions, such as the time structure of the collisions and the presence of beam-induced backgrounds. The requirements include ultra-low mass, facilitated by power pulsing and air cooling in the vertex-detector region, small cell sizes and precision hit timing at the few-ns level. A highly granular all- silicon vertex and tracking detector system is under development, following an integrated approach addressing simultaneously the physics requirements and engineering constraints.

  19. Laser-produced lithium plasma as a narrow-band extended ultraviolet radiation source for photoelectron spectroscopy.

    Science.gov (United States)

    Schriever, G; Mager, S; Naweed, A; Engel, A; Bergmann, K; Lebert, R

    1998-03-01

    Extended ultraviolet (EUV) emission characteristics of a laser-produced lithium plasma are determined with regard to the requirements of x-ray photoelectron spectroscopy. The main features of interest are spectral distribution, photon flux, bandwidth, source size, and emission duration. Laser-produced lithium plasmas are characterized as emitters of intense narrow-band EUV radiation. It can be estimated that the lithium Lyman-alpha line emission in combination with an ellipsoidal silicon/molybdenum multilayer mirror is a suitable EUV source for an x-ray photoelectron spectroscopy microscope with a 50-meV energy resolution and a 10-mum lateral resolution.

  20. Brain inspired high performance electronics on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2014-06-01

    Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

  1. Silicon micromachined vibrating gyroscopes

    Science.gov (United States)

    Voss, Ralf

    1997-09-01

    This work gives an overview of silicon micromachined vibrating gyroscopes. Market perspectives and fields of application are pointed out. The advantage of using silicon micromachining is discussed and estimations of the desired performance, especially for automobiles are given. The general principle of vibrating gyroscopes is explained. Vibrating silicon gyroscopes can be divided into seven classes. for each class the characteristic principle is presented and examples are given. Finally a specific sensor, based on a tuning fork for automotive applications with a sensitivity of 250(mu) V/degrees is described in detail.

  2. Porous silicon gettering

    Energy Technology Data Exchange (ETDEWEB)

    Tsuo, Y.S.; Menna, P.; Pitts, J.R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    The authors have studied a novel extrinsic gettering method that uses the large surface areas produced by a porous-silicon etch as gettering sites. The annealing step of the gettering used a high-flux solar furnace. They found that a high density of photons during annealing enhanced the impurity diffusion to the gettering sites. The authors used metallurgical-grade Si (MG-Si) prepared by directional solidification casing as the starting material. They propose to use porous-silicon-gettered MG-Si as a low-cost epitaxial substrate for polycrystalline silicon thin-film growth.

  3. Silicon etch process

    International Nuclear Information System (INIS)

    Day, D.J.; White, J.C.

    1984-01-01

    A silicon etch process wherein an area of silicon crystal surface is passivated by radiation damage and non-planar structure produced by subsequent anisotropic etching. The surface may be passivated by exposure to an energetic particle flux - for example an ion beam from an arsenic, boron, phosphorus, silicon or hydrogen source, or an electron beam. Radiation damage may be used for pattern definition and/or as an etch stop. Ethylenediamine pyrocatechol or aqueous potassium hydroxide anisotropic etchants may be used. The radiation damage may be removed after etching by thermal annealing. (author)

  4. Silicon integrated circuit process

    International Nuclear Information System (INIS)

    Lee, Jong Duck

    1985-12-01

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  5. Silicon integrated circuit process

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jong Duck

    1985-12-15

    This book introduces the process of silicon integrated circuit. It is composed of seven parts, which are oxidation process, diffusion process, ion implantation process such as ion implantation equipment, damage, annealing and influence on manufacture of integrated circuit and device, chemical vapor deposition process like silicon Epitaxy LPCVD and PECVD, photolithography process, including a sensitizer, spin, harden bake, reflection of light and problems related process, infrared light bake, wet-etch, dry etch, special etch and problems of etching, metal process like metal process like metal-silicon connection, aluminum process, credibility of aluminum and test process.

  6. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.; Peters, Craig; Brongersma, Mark; Cui, Yi; McGehee, Mike

    2010-01-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  7. Silicon nanowire hybrid photovoltaics

    KAUST Repository

    Garnett, Erik C.

    2010-06-01

    Silicon nanowire Schottky junction solar cells have been fabricated using n-type silicon nanowire arrays and a spin-coated conductive polymer (PEDOT). The polymer Schottky junction cells show superior surface passivation and open-circuit voltages compared to standard diffused junction cells with native oxide surfaces. External quantum efficiencies up to 88% were measured for these silicon nanowire/PEDOT solar cells further demonstrating excellent surface passivation. This process avoids high temperature processes which allows for low-cost substrates to be used. © 2010 IEEE.

  8. Ultra-shallow arsenic implant depth profiling using low-energy nitrogen beams

    International Nuclear Information System (INIS)

    Fearn, Sarah; Chater, Richard; McPhail, David

    2004-01-01

    Sputtering of silicon by low-energy nitrogen primary ion beams has been studied by a number of authors to characterize the altered layer, ripple formation and the sputtered yields of secondary ions [Surf. Sci. 424 (1999) 299; Appl. Phys. A: Mater. Sci. Process 53 (1991) 179; Appl. Phys. Lett. 73 (1998) 1287]. This study examines the application of low-energy nitrogen primary ion beams for the possible depth profiling of ultra-shallow arsenic implants into silicon. The emphasis of this work is on the matrix silicon signals in the pre-equilibrium surface region that are used for dose calibration. Problems with these aspects of the concentration depth profiling can give significant inconsistencies well outside the error limits of the quoted dose for the arsenic implantation as independently verified by CV profiling. This occurs during depth profiling with either oxygen primary ion beams (with and without oxygen leaks) or cesium primary ion beams

  9. Joining elements of silicon carbide

    International Nuclear Information System (INIS)

    Olson, B.A.

    1979-01-01

    A method of joining together at least two silicon carbide elements (e.g.in forming a heat exchanger) is described, comprising subjecting to sufficiently non-oxidizing atmosphere and sufficiently high temperature, material placed in space between the elements. The material consists of silicon carbide particles, carbon and/or a precursor of carbon, and silicon, such that it forms a joint joining together at least two silicon carbide elements. At least one of the elements may contain silicon. (author)

  10. Silicon-Vacancy Color Centers in Nanodiamonds: Cathodoluminescence Imaging Marker in the Near Infrared

    OpenAIRE

    Zhang, Huiliang; Aharonovich, Igor; Glenn, David R.; Schalek, R.; Magyar, Andrew P.; Lichtman, Jeff W.; Hu, Evelyn L.; Walsworth, Ronald L.

    2013-01-01

    We demonstrate that nanodiamonds fabricated to incorporate silicon-vacancy (Si-V) color centers provide bright, spectrally narrow, and stable cathodoluminescence (CL) in the near-infrared. Si-V color centers containing nanodiamonds are promising as non-bleaching optical markers for correlated CL and secondary electron microscopy, including applications to nanoscale bioimaging.

  11. Generation of a 640 Gbit/s NRZ OTDM signal using a silicon microring resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Hu, Hao; Galili, Michael

    2011-01-01

    in a highly nonlinear fiber. Second, RZ-to-NRZ format conversion is achieved in a specially designed silicon microring resonator with FSR of 1280 GHz, Q value of 638, high extinction ratio and low coupling loss to optical fiber. A 640 Gbit/s NRZ OTDM signal with very clear eye-diagram and narrower bandwidth...

  12. Observing the morphology of single-layered embedded silicon nanocrystals by using temperature-stable TEM membranes

    Directory of Open Access Journals (Sweden)

    Sebastian Gutsch

    2015-04-01

    Full Text Available We use high-temperature-stable silicon nitride membranes to investigate single layers of silicon nanocrystal ensembles by energy filtered transmission electron microscopy. The silicon nanocrystals are prepared from the precipitation of a silicon-rich oxynitride layer sandwiched between two SiO2 diffusion barriers and subjected to a high-temperature annealing. We find that such single layers are very sensitive to the annealing parameters and may lead to a significant loss of excess silicon. In addition, these ultrathin layers suffer from significant electron beam damage that needs to be minimized in order to image the pristine sample morphology. Finally we demonstrate how the silicon nanocrystal size distribution develops from a broad to a narrow log-normal distribution, when the initial precipitation layer thickness and stoichiometry are below a critical value.

  13. Radiation hard silicon particle detectors for HL-LHC—RD50 status report

    Energy Technology Data Exchange (ETDEWEB)

    Terzo, S., E-mail: Stefano.Terzo@mpp.mpg.de

    2017-02-11

    It is foreseen to significantly increase the luminosity of the LHC by upgrading towards the HL-LHC (High Luminosity LHC). The Phase-II-Upgrade scheduled for 2024 will mean unprecedented radiation levels, way beyond the limits of the silicon trackers currently employed. All-silicon central trackers are being studied in ATLAS, CMS and LHCb, with extremely radiation hard silicon sensors to be employed on the innermost layers. Within the RD50 Collaboration, a massive R&D program is underway across experimental boundaries to develop silicon sensors with sufficient radiation tolerance. We will present results of several detector technologies and silicon materials at radiation levels corresponding to HL-LHC fluences. Based on these results, we will give recommendations for the silicon detectors to be used at the different radii of tracking systems in the LHC detector upgrades. In order to complement the measurements, we also perform detailed simulation studies of the sensors. - Highlights: • The RD50 collaboration investigates the radiation hardness of silicon sensors. • Different approaches to simulate the detector response after irradiation are shown. • HV-CMOS are cost-effective solution for the outer pixel layers at HL-LHC. • 3D and thin planar sensors with slim edges are solutions for innermost layers at HL-LHC. • Sensors with intrinsic gain are investigated to develop ultra-fast silicon detectors.

  14. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  15. Advances in silicon nanophotonics

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher; Pu, Minhao

    Silicon has long been established as an ideal material for passive integrated optical circuitry due to its high refractive index, with corresponding strong optical confinement ability, and its low-cost CMOS-compatible manufacturability. However, the inversion symmetry of the silicon crystal lattice.......g. in high-bit-rate optical communication circuits and networks, it is vital that the nonlinear optical effects of silicon are being strongly enhanced. This can among others be achieved in photonic-crystal slow-light waveguides and in nano-engineered photonic-wires (Fig. 1). In this talk I shall present some...... recent advances in this direction. The efficient coupling of light between optical fibers and the planar silicon devices and circuits is of crucial importance. Both end-coupling (Fig. 1) and grating-coupling solutions will be discussed along with polarization issues. A new scheme for a hybrid III...

  16. Integrated silicon optoelectronics

    CERN Document Server

    Zimmermann, Horst

    2000-01-01

    'Integrated Silicon Optoelectronics'assembles optoelectronics and microelectronics The book concentrates on silicon as the major basis of modern semiconductor devices and circuits Starting from the basics of optical emission and absorption and from the device physics of photodetectors, the aspects of the integration of photodetectors in modern bipolar, CMOS, and BiCMOS technologies are discussed Detailed descriptions of fabrication technologies and applications of optoelectronic integrated circuits are included The book, furthermore, contains a review of the state of research on eagerly expected silicon light emitters In order to cover the topic of the book comprehensively, integrated waveguides, gratings, and optoelectronic power devices are included in addition Numerous elaborate illustrations promote an easy comprehension 'Integrated Silicon Optoelectronics'will be of value to engineers, physicists, and scientists in industry and at universities The book is also recommendable for graduate students speciali...

  17. Silicon microfabricated beam expander

    International Nuclear Information System (INIS)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-01-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed

  18. Silicon microfabricated beam expander

    Science.gov (United States)

    Othman, A.; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A.; Ain, M. F.

    2015-03-01

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  19. Silicon microfabricated beam expander

    Energy Technology Data Exchange (ETDEWEB)

    Othman, A., E-mail: aliman@ppinang.uitm.edu.my; Ibrahim, M. N.; Hamzah, I. H.; Sulaiman, A. A. [Faculty of Electrical Engineering, Universiti Teknologi MARA Malaysia, 40450, Shah Alam, Selangor (Malaysia); Ain, M. F. [School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Seri Ampangan, 14300,Nibong Tebal, Pulau Pinang (Malaysia)

    2015-03-30

    The feasibility design and development methods of silicon microfabricated beam expander are described. Silicon bulk micromachining fabrication technology is used in producing features of the structure. A high-precision complex 3-D shape of the expander can be formed by exploiting the predictable anisotropic wet etching characteristics of single-crystal silicon in aqueous Potassium-Hydroxide (KOH) solution. The beam-expander consist of two elements, a micromachined silicon reflector chamber and micro-Fresnel zone plate. The micro-Fresnel element is patterned using lithographic methods. The reflector chamber element has a depth of 40 µm, a diameter of 15 mm and gold-coated surfaces. The impact on the depth, diameter of the chamber and absorption for improved performance are discussed.

  20. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  1. The chemistry of ultra-low concentrations

    International Nuclear Information System (INIS)

    Vertes, Attila; Kiss, Istvan

    1987-01-01

    Methods for the separation and enrichment of radionuclides in the ultra-low concentration range (coprecipitation, adsorption of radioactive substances on crystals) are disscussed in this chapter of the textbook. The properties and behaviour of ultra-dilute solutions, radiocolloids and the electrochemistry of ultra-dilute solution are also overviewed

  2. Process induced sub-surface damage in mechanically ground silicon wafers

    International Nuclear Information System (INIS)

    Yang Yu; De Munck, Koen; Teixeira, Ricardo Cotrin; Swinnen, Bart; De Wolf, Ingrid; Verlinden, Bert

    2008-01-01

    Micro-Raman spectroscopy, scanning electron microcopy, atomic force microscopy and preferential etching were used to characterize the sub-surface damage induced by the rough and fine grinding steps used to make ultra-thin silicon wafers. The roughly and ultra-finely ground silicon wafers were examined on both the machined (1 0 0) planes and the cross-sectional (1 1 0) planes. They reveal similar multi-layer damage structures, consisting of amorphous, plastically deformed and elastically stressed layers. However, the thickness of each layer in the roughly ground sample is much higher than its counterpart layers in the ultra-finely ground sample. The residual stress after rough and ultra-fine grinding is in the range of several hundreds MPa and 30 MPa, respectively. In each case, the top amorphous layer is believed to be the result of sequential phase transformations (Si-I to Si-II to amorphous Si). These phase transformations correspond to a ductile grinding mechanism, which is dominating in ultra-fine grinding. On the other hand, in rough grinding, a mixed mechanism of ductile and brittle grinding causes multi-layer damage and sub-surface cracks

  3. Nanostructured silicon for thermoelectric

    Science.gov (United States)

    Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

    2011-06-01

    Thermoelectric modules convert thermal energy into electrical energy and vice versa. At present bismuth telluride is the most widely commercial used material for thermoelectric energy conversion. There are many applications where bismuth telluride modules are installed, mainly for refrigeration. However, bismuth telluride as material for energy generation in large scale has some disadvantages. Its availability is limited, it is hot stable at higher temperatures (>250°C) and manufacturing cost is relatively high. An alternative material for energy conversion in the future could be silicon. The technological processing of silicon is well advanced due to the rapid development of microelectronics in recent years. Silicon is largely available and environmentally friendly. The operating temperature of silicon thermoelectric generators can be much higher than of bismuth telluride. Today silicon is rarely used as a thermoelectric material because of its high thermal conductivity. In order to use silicon as an efficient thermoelectric material, it is necessary to reduce its thermal conductivity, while maintaining high electrical conductivity and high Seebeck coefficient. This can be done by nanostructuring into arrays of pillars. Fabrication of silicon pillars using ICP-cryogenic dry etching (Inductive Coupled Plasma) will be described. Their uniform height of the pillars allows simultaneous connecting of all pillars of an array. The pillars have diameters down to 180 nm and their height was selected between 1 micron and 10 microns. Measurement of electrical resistance of single silicon pillars will be presented which is done in a scanning electron microscope (SEM) equipped with nanomanipulators. Furthermore, measurement of thermal conductivity of single pillars with different diameters using the 3ω method will be shown.

  4. Study on Silicon detectors

    International Nuclear Information System (INIS)

    Gervino, G.; Boero, M.; Manfredotti, C.; Icardi, M.; Gabutti, A.; Bagnolatti, E.; Monticone, E.

    1990-01-01

    Prototypes of Silicon microstrip detectors and Silicon large area detectors (3x2 cm 2 ), realized directly by our group, either by ion implantation or by diffusion are presented. The physical detector characteristics and their performances determined by exposing them to different radioactive sources and the results of extensive tests on passivation, where new technological ways have been investigated, are discussed. The calculation of the different terms contributing to the total dark current is reported

  5. Subwavelength silicon photonics

    International Nuclear Information System (INIS)

    Cheben, P.; Bock, P.J.; Schmid, J.H.; Lapointe, J.; Janz, S.; Xu, D.-X.; Densmore, A.; Delage, A.; Lamontagne, B.; Florjanczyk, M.; Ma, R.

    2011-01-01

    With the goal of developing photonic components that are compatible with silicon microelectronic integrated circuits, silicon photonics has been the subject of intense research activity. Silicon is an excellent material for confining and manipulating light at the submicrometer scale. Silicon optoelectronic integrated devices have the potential to be miniaturized and mass-produced at affordable cost for many applications, including telecommunications, optical interconnects, medical screening, and biological and chemical sensing. We review recent advances in silicon photonics research at the National Research Council Canada. A new type of optical waveguide is presented, exploiting subwavelength grating (SWG) effect. We demonstrate subwavelength grating waveguides made of silicon, including practical components operating at telecom wavelengths: input couplers, waveguide crossings and spectrometer chips. SWG technique avoids loss and wavelength resonances due to diffraction effects and allows for single-mode operation with direct control of the mode confinement by changing the refractive index of a waveguide core over a range as broad as 1.6 - 3.5 simply by lithographic patterning. The light can be launched to these waveguides with a coupling loss as small as 0.5 dB and with minimal wavelength dependence, using coupling structures similar to that shown in Fig. 1. The subwavelength grating waveguides can cross each other with minimal loss and negligible crosstalk which allows massive photonic circuit connectivity to overcome the limits of electrical interconnects. These results suggest that the SWG waveguides could become key elements for future integrated photonic circuits. (authors)

  6. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  7. Amorphous silicon crystalline silicon heterojunction solar cells

    CERN Document Server

    Fahrner, Wolfgang Rainer

    2013-01-01

    Amorphous Silicon/Crystalline Silicon Solar Cells deals with some typical properties of heterojunction solar cells, such as their history, the properties and the challenges of the cells, some important measurement tools, some simulation programs and a brief survey of the state of the art, aiming to provide an initial framework in this field and serve as a ready reference for all those interested in the subject. This book helps to "fill in the blanks" on heterojunction solar cells. Readers will receive a comprehensive overview of the principles, structures, processing techniques and the current developmental states of the devices. Prof. Dr. Wolfgang R. Fahrner is a professor at the University of Hagen, Germany and Nanchang University, China.

  8. Are narrow mesons, baryons and dibaryons evidence for multiquark states?

    International Nuclear Information System (INIS)

    Tatischeff, B.; Yonnet, J.

    2000-01-01

    Several narrow structures have been progressively observed since the last fifteen years, in di-baryonic invariant mass spectra or in missing mass spectra. More recently, narrow structures were observed in baryonic and now in mesonic mass spectra. Since these small peaks appear at fixed masses, independently of the experiment, they are associated with real states. There is no room to explain these states within classical nuclear physics taking into account baryonic and mesonic degrees of freedom. An interpretation is proposed, which associate these narrow structures with two coloured quark clusters. (authors)

  9. Oxidation under electron bombardment. A tool for studying the initial states of silicon oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Carriere, B.; Deville, J.P.; El Maachi, A.

    1987-06-01

    The exciting beam of an Auger electron spectrometer has been used to monitor the oxidation of silicon single crystals at room temperature and very low pressures of oxygen (approx. 10/sup -7/ Torr). This process allows us to build ultra-thin layers of silica on silicon (down to 30 A) but it is mostly used to investigate the mechanisms of the initial stages of oxidation. Auger spectra recorded continuously during the oxidation process provide information on (1) the nature of the silicon-oxygen chemical bonds which are interpreted through fine structure in the Auger peak, and (2) the kinetics of oxide formation which are deduced from curves of Auger signal versus time. An account is given of the contribution of these Auger studies to the description of the intermediate oxide layer during the reaction between silicon and oxygen and the influence of surface structural disorder, induced mainly by argon-ion bombardment, is discussed in terms of reactivity and oxide coverage.

  10. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.; Sgourou, E. N.; Londos, C. A.; Schwingenschlö gl, Udo

    2015-01-01

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  11. Colloidal characterization of ultrafine silicon carbide and silicon nitride powders

    Science.gov (United States)

    Whitman, Pamela K.; Feke, Donald L.

    1986-01-01

    The effects of various powder treatment strategies on the colloid chemistry of aqueous dispersions of silicon carbide and silicon nitride are examined using a surface titration methodology. Pretreatments are used to differentiate between the true surface chemistry of the powders and artifacts resulting from exposure history. Silicon nitride powders require more extensive pretreatment to reveal consistent surface chemistry than do silicon carbide powders. As measured by titration, the degree of proton adsorption from the suspending fluid by pretreated silicon nitride and silicon carbide powders can both be made similar to that of silica.

  12. Oxygen defect processes in silicon and silicon germanium

    KAUST Repository

    Chroneos, A.

    2015-06-18

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.

  13. The strength limits of ultra-thin copper films

    Energy Technology Data Exchange (ETDEWEB)

    Wiederhirn, Guillaume

    2007-07-02

    Elucidating size effects in ultra-thin films is essential to ensure the performance and reliability of MEMS and electronic devices. In this dissertation, the influence of a capping layer on the mechanical behavior of copper (Cu) films was analyzed. Passivation is expected to shut down surface diffusion and thus to alter the contributions of dislocation- and diffusion-based plasticity in thin films. Experiments were carried out on 25 nm to 2 {mu}m thick Cu films magnetron-sputtered onto amorphous-silicon nitride coated silicon (111) substrates. These films were capped with 10 nm of aluminum oxide or silicon nitride passivation without breaking vacuum either directly after Cu deposition or after a 500 C anneal. The evolution of thermal stresses in these films was investigated mainly by the substrate curvature method between -160 C and 500 C. Negligible differences were detected for the silicon nitride vs. the aluminum oxide passivated Cu films. The processing parameters associated with the passivation deposition also had no noticeable effect on the stress-temperature behavior of the Cu. However, the thermomechanical behavior of passivated Cu films strongly depended on the Cu film thickness. For films in the micrometer range, the influence of the passivation layer was not significant, which suggests that the Cu deformed mainly by dislocation plasticity. However, diffusional creep plays an increasing role with decreasing film thickness since it becomes increasingly difficult to nucleate dislocations in smaller grains. Size effects were investigated by plotting the stress at room temperature after thermal cycling as a function of the inverse film thickness. Between 2 {mu}m and 200 nm, the room temperature stress was inversely proportional to the film thickness. The passivation exerted a strong effect on Cu films thinner than 100 nm by effectively shutting down surface diffusion mechanisms. Since dislocation processes were also shut off in these ultra-thin films, they

  14. Optical micro-cavities on silicon

    Science.gov (United States)

    Dai, Daoxin; Liu, Erhu; Tan, Ying

    2018-01-01

    Silicon-based optical microcavities are very popular for many applications because of the ultra-compact footprint, easy scalability, and functional versatility. In this paper we give a discussion about the challenges of the optical microcavities on silicon and also give a review of our recent work, including the following parts. First, a near-"perfect" high-order MRR optical filter with a box-like filtering response is realized by introducing bent directional couplers to have sufficient coupling between the access waveguide and the microrings. Second, an efficient thermally-tunable MRR-based optical filter with graphene transparent nano-heater is realized by introducing transparent graphene nanoheaters. Thirdly, a polarization-selective microring-based optical filter is realized to work with resonances for only one of TE and TM polarizations for the first time. Finally, a on-chip reconfigurable optical add-drop multiplexer for hybrid mode- /wavelength-division-multiplexing systems is realized for the first time by monolithically integrating a mode demultiplexer, four MRR optical switches, and a mode multiplexer.

  15. Neuron-inspired flexible memristive device on silicon (100)

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-06-18

    Comprehensive understanding of the world\\'s most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At the same time, brain cortex is folded allowing trillions of neurons to be integrated in a compact volume. Therefore, we report flexible aluminium oxide based memristive devices fabricated and then derived from widely used bulk mono-crystalline silicon (100). We use complementary metal oxide semiconductor based processes to layout the foundation for ultra large scale integration (ULSI) of such memory devices to advance the task of comprehending a physical model of human brain.

  16. Ultra compact triplexing filters based on SOI nanowire AWGs

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei, E-mail: junming@red.semi.ac.cn [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2011-04-15

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

  17. Ultra compact triplexing filters based on SOI nanowire AWGs

    International Nuclear Information System (INIS)

    Zhang Jiashun; An Junming; Zhao Lei; Song Shijiao; Wang Liangliang; Li Jianguang; Wang Hongjie; Wu Yuanda; Hu Xiongwei

    2011-01-01

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion. (semiconductor devices)

  18. Ultra compact triplexing filters based on SOI nanowire AWGs

    Science.gov (United States)

    Jiashun, Zhang; Junming, An; Lei, Zhao; Shijiao, Song; Liangliang, Wang; Jianguang, Li; Hongjie, Wang; Yuanda, Wu; Xiongwei, Hu

    2011-04-01

    An ultra compact triplexing filter was designed based on a silicon on insulator (SOI) nanowire arrayed waveguide grating (AWG) for fiber-to-the-home FTTH. The simulation results revealed that the design performed well in the sense of having a good triplexing function. The designed SOI nanowire AWGs were fabricated using ultraviolet lithography and induced coupler plasma etching. The experimental results showed that the crosstalk was less than -15 dB, and the 3 dB-bandwidth was 11.04 nm. The peak wavelength output from ports a, c, and b were 1455, 1510 and 1300 nm, respectively, which deviated from our original expectations. The deviation of the wavelength is mainly caused by 45 nm width deviation of the arrayed waveguides during the course of the fabrication process and partly caused by material dispersion.

  19. What's in a name? Expiratory tracheal narrowing in adults explained

    International Nuclear Information System (INIS)

    Leong, P.; Bardin, P.G.; Lau, K.K.

    2013-01-01

    Tracheomalacia, tracheobronchomalacia, and excessive dynamic airway collapse are all terms used to describe tracheal narrowing in expiration. The first two describe luminal reduction from cartilage softening and the latter refers to luminal reduction from exaggerated posterior membrane movement. Expiratory tracheal narrowing is a frequent occurrence that can cause symptoms of airway obstruction, such as dyspnoea, wheeze, and exercise intolerance. The accurate diagnosis and quantification of expiratory tracheal narrowing has important aetiological, therapeutic, and prognostic implications. The reference standard for diagnosis has traditionally been bronchoscopy; however, this method has significant limitations. Expiratory tracheal disorders are readily detected by four-dimensional dynamic volume multidetector computed tomography (4D-CT), an emerging, non-invasive method that will potentially enable detection and quantification of these conditions. This review discusses the morphological forms of expiratory tracheal narrowing and demonstrates the utility of 4D-CT in the diagnosis, quantification, and treatment of these important conditions

  20. Single frequency narrow linewidth 2 micron laser, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA needs narrow linewidth lasers in the 1.5 or 2 micron wavelength regime for coherent Lidar applications. The laser should be tunable by several nm and frequency...

  1. Subglottic cysts and asymmetrical subglottic narrowing on neck radiograph

    International Nuclear Information System (INIS)

    Holinger, L.D.; Torium, D.M.; Anandappa, E.C.

    1988-01-01

    The congenital subglottic hemangioma typically appears as an asymmetric subglottic narrowing or mass on frontal neck radiograph. Therefore, soft tissue neck radiography has been advocated as a definitive non-operative approach for diagnosing these lesions. However, we have noted similar asymmetric subglottic narrowing in patients with acquired subglottic cysts. These retention cysts occur following long-term intubation in the neonate. The mechanism probably involves subglottic fibrosis which obstructs glands with subsequent cyst formation. Acquired subglottic cysts typically appear as an asymmetric narrowing on frontal or lateral soft tissue neck radiographs. These lesions may produce airway compromise but are effectively treated by forceps or laser removal. Acquired subglottic cysts must be included in the differential diagnosis of asymmetric subglottic narrowing. The definitive diagnosis is made by direct laryngoscopy, not soft tissue neck radiograph. (orig.)

  2. THE TREATMENT OF OPEN- AND NARROW-ANGLE GLAUCOMA

    African Journals Online (AJOL)

    1971-04-10

    Apr 10, 1971 ... glaucoma will be considered: narrow-angle glaucoma. (acute glaucoma) and ... emotional or a physical crisis. The pain is in the distribu- .... ness, not increased pressure, haunts people suffering from glaucoma'.' The saga of ...

  3. Comment on the narrow structure reported by Amaryan et al

    OpenAIRE

    Anghinolfi, M.; Ball, J.; Baltzell, N. A.; Battaglieri, M.; Bedlinskiy, I.; Bellis, M.; Biselli, A. S.; Bookwalter, C.; Boiarinov, S.; Bosted, P.; Burkert, V. D.; Carman, D. S.; Celentano, A.; Chandavar, S.; Cole, P. L.

    2012-01-01

    The CLAS Collaboration provides a comment on the physics interpretation of the results presented in a paper published by M. Amaryan et al. regarding the possible observation of a narrow structure in the mass spectrum of a photoproduction experiment.

  4. Narrow band interference cancelation in OFDM: Astructured maximum likelihood approach

    KAUST Repository

    Sohail, Muhammad Sadiq; Al-Naffouri, Tareq Y.; Al-Ghadhban, Samir N.

    2012-01-01

    This paper presents a maximum likelihood (ML) approach to mitigate the effect of narrow band interference (NBI) in a zero padded orthogonal frequency division multiplexing (ZP-OFDM) system. The NBI is assumed to be time variant and asynchronous

  5. Ultra-broadband carpet cloak for transverse-electric polarization

    International Nuclear Information System (INIS)

    Deng, Ye; Xu, Su; Zhang, Runren; Zheng, Bin; Chen, Hongsheng; Chen, Hua; Yu, Faxin; Gao, Fei; Zhang, Baile

    2016-01-01

    Magnetism is a necessity in constructing macroscopic metamaterial invisibility cloaks that are theoretically designed by transformation optics, but will generally limit the cloaking bandwidth to an impractically narrow range. To meet the broad bandwidth demand, magnetism has been fully abandoned in previous demonstrations of macroscopic carpet cloaking, whose approach, however, cannot apply to a transverse-electric (TE) polarization. To fill this gap, here we experimentally demonstrate an ultra-broadband magnetic carpet cloak for the TE polarization. The cloak is made of non-resonant closed-ring metamaterials with little dispersion and the cloaking performance is confirmed with both time-domain simulation and frequency scanning measurement over a broad bandwidth corresponding to a pulse signal illumination. (paper)

  6. Ultra-broadband carpet cloak for transverse-electric polarization

    Science.gov (United States)

    Deng, Ye; Xu, Su; Zhang, Runren; Zheng, Bin; Chen, Hua; Gao, Fei; Yu, Faxin; Zhang, Baile; Chen, Hongsheng

    2016-04-01

    Magnetism is a necessity in constructing macroscopic metamaterial invisibility cloaks that are theoretically designed by transformation optics, but will generally limit the cloaking bandwidth to an impractically narrow range. To meet the broad bandwidth demand, magnetism has been fully abandoned in previous demonstrations of macroscopic carpet cloaking, whose approach, however, cannot apply to a transverse-electric (TE) polarization. To fill this gap, here we experimentally demonstrate an ultra-broadband magnetic carpet cloak for the TE polarization. The cloak is made of non-resonant closed-ring metamaterials with little dispersion and the cloaking performance is confirmed with both time-domain simulation and frequency scanning measurement over a broad bandwidth corresponding to a pulse signal illumination.

  7. Development of Microstrip Silicon Detectors for Star and ALICE

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Guthneck, L; Higueret, S; Hundt, F; Kühn, C E; Lutz, Jean Robert; Pozdniakov, S; Rami, F; Tarchini, A; Boucham, A; Bouvier, S; Erazmus, B; Germain, M; Giliberto, S; Martin, L; Le Moal, C; Roy, C; Colledani, C; Dulinski, W; Turchetta, R

    1998-01-01

    The physics program of STAR and ALICE at ultra-relativistic heavy ion colliders, RHIC and LHC respectively, requires very good tracking capabilities. Some specific quark gluon plasma signatures, based on strange matter measurements implies quite a good secondary vertex reconstruction.For this purpose, the inner trackers of both experiments are composed of high-granularity silicon detectors. The current status of the development of double-sided silicon microstrip detectors is presented in this work.The global performance for tracking purpose adn particle identification are first reviewed. Then tests of the detectors and of the associated readout electronics are described. In-beam measurements of noise, spatial resolution, efficiency and charge matching capability, as well as radiation hardness, are examined.

  8. Polarization Control for Silicon Photonic Circuits

    Science.gov (United States)

    Caspers, Jan Niklas

    In recent years, the field of silicon photonics has received much interest from researchers and companies across the world. The idea is to use photons to transmit information on a computer chip in order to increase computational speed while decreasing the power required for computation. To allow for communication between the chip and other components, such as the computer memory, these silicon photonics circuits need to be interfaced with optical fiber. Unfortunately, in order to interface an optical fiber with an integrated photonics circuit two major challenges need to be overcome: a mode-size mismatch as well as a polarization mismatch. While the problem of mode-size has been well investigated, the polarization mismatch has yet to be addressed. In order to solve the polarization mismatch one needs to gain control over the polarization of the light in a waveguide. In this thesis, I will present the components required to solve the polarization mismatch. Using a novel wave guiding structure, the hybrid plasmonic waveguide, an ultra-compact polarization rotator is designed, fabricated, and tested. The hybrid plasmonic rotator has a performance similar to purely dielectric rotators while being more than an order of magnitude smaller. Additionally, a broadband hybrid plasmonic coupler is designed and measured. This coupler has a performance similar to dielectric couplers while having a footprint an order of magnitude smaller. Finally, a system solution to the polarization mismatch is provided. The system, a polarization adapter, matches the incoming changing polarization from the fiber actively to the correct one of the silicon photonics circuit. The polarization adapter is demonstrated experimentally to prove its operation. This proof is based on dielectric components, but the aforementioned hybrid plasmonic waveguide components would make the system more compact.

  9. Narrow Framing and Long-Term Care Insurance

    OpenAIRE

    Daniel Gottlieb; Olivia S. Mitchell

    2015-01-01

    We propose a model of narrow framing in insurance and test it using data from a new module we designed and fielded in the Health and Retirement Study. We show that respondents subject to narrow framing are substantially less likely to buy long-term care insurance than average. This effect is distinct from, and much larger than, the effects of risk aversion or adverse selection, and it offers a new explanation for why people underinsure their later-life care needs.

  10. Molded ultra-low density microcellular foams

    International Nuclear Information System (INIS)

    Rand, P.B.; Montoya, O.J.

    1986-07-01

    Ultra-low density (< 0.01 g/cc) microcellular foams were required for the NARYA pulsed-power-driven x-ray laser development program. Because of their extreme fragility, molded pieces would be necessary to successfully field these foams in the pulsed power accelerator. All of the foams evaluated were made by the thermally induced phase separation technique from solutions of water soluble polymers. The process involved rapidly freezing the solution to induce the phase separation, and then freeze drying to remove the water without destroying the foam's structure. More than sixty water soluble polymers were evaluated by attempting to make their solutions into foams. The foams were evaluated for shrinkage, density, and microstructure to determine their suitability for molding and meeting the required density and cell size requirements of 5.0 mg/cc and less than twenty μmeters. Several promising water soluble polymers were identified including the polyactylic acids, guar gums, polyactylamide, and polyethylene oxide. Because of thier purity, structure, and low shrinkage, the polyacrylic acids were chosen to develop molding processes. The initial requirements were for 2.0 cm. long molded rods with diameters of 1.0, 2.0. and 3.0 mm. These rods were made by freezing the solution in thin walled silicon rubber molds, extracting the frozen preform from the mold, and then freeze drying. Requirements for half rods and half annuli necessitated using aluminum molds. Again we successfully molded these shapes. Our best efforts to date involve molding annuli with 3.0 mm outside diameters and 2.0 mm inside diameters

  11. Ocular Biometrics of Myopic Eyes With Narrow Angles.

    Science.gov (United States)

    Chong, Gabriel T; Wen, Joanne C; Su, Daniel Hsien-Wen; Stinnett, Sandra; Asrani, Sanjay

    2016-02-01

    The purpose of this study was to compare the ocular biometrics between myopic patients with and without narrow angles. Patients with a stable myopic refraction (myopia worse than -1.00 D spherical equivalent) were prospectively recruited. Angle status was assessed using gonioscopy and biometric measurements were performed using an anterior segment optical coherence tomography and an IOLMaster. A total of 29 patients (58 eyes) were enrolled with 13 patients (26 eyes) classified as having narrow angles and 16 patients (32 eyes) classified as having open angles. Baseline demographics of age, sex, and ethnicity did not differ significantly between the 2 groups. The patients with narrow angles were on average older than those with open angles but the difference did not reach statistical significance (P=0.12). The central anterior chamber depth was significantly less in the eyes with narrow angles (P=0.05). However, the average lens thickness, although greater in the eyes with narrow angles, did not reach statistical significance (P=0.10). Refractive error, axial lengths, and iris thicknesses did not differ significantly between the 2 groups (P=0.32, 0.47, 0.15). Narrow angles can occur in myopic eyes. Routine gonioscopy is therefore recommended for all patients regardless of refractive error.

  12. Acquisition and visualization techniques for narrow spectral color imaging.

    Science.gov (United States)

    Neumann, László; García, Rafael; Basa, János; Hegedüs, Ramón

    2013-06-01

    This paper introduces a new approach in narrow-band imaging (NBI). Existing NBI techniques generate images by selecting discrete bands over the full visible spectrum or an even wider spectral range. In contrast, here we perform the sampling with filters covering a tight spectral window. This image acquisition method, named narrow spectral imaging, can be particularly useful when optical information is only available within a narrow spectral window, such as in the case of deep-water transmittance, which constitutes the principal motivation of this work. In this study we demonstrate the potential of the proposed photographic technique on nonunderwater scenes recorded under controlled conditions. To this end three multilayer narrow bandpass filters were employed, which transmit at 440, 456, and 470 nm bluish wavelengths, respectively. Since the differences among the images captured in such a narrow spectral window can be extremely small, both image acquisition and visualization require a novel approach. First, high-bit-depth images were acquired with multilayer narrow-band filters either placed in front of the illumination or mounted on the camera lens. Second, a color-mapping method is proposed, using which the input data can be transformed onto the entire display color gamut with a continuous and perceptually nearly uniform mapping, while ensuring optimally high information content for human perception.

  13. Intramyocardial arterial narrowing in dogs with subaortic stenosis.

    Science.gov (United States)

    Falk, T; Jönsson, L; Pedersen, H D

    2004-09-01

    Earlier studies have described intramyocardial arterial narrowing based on hyperplasia and hypertrophy of the vessel wall in dogs with subaortic stenosis (SAS). In theory, such changes might increase the risk of sudden death, as they seem to do in heart disease in other species. This retrospective pathological study describes and quantifies intramyocardial arterial narrowing in 44 dogs with naturally occurring SAS and in eight control dogs. The majority of the dogs with SAS died suddenly (n=27); nine had died or been euthanased with signs of heart failure and eight were euthanased without clinical signs. Dogs with SAS had significantly narrower intramyocardial arteries (Pdogs. Male dogs and those with more severe hypertrophy had more vessel narrowing (P=0.02 and P=0.02, respectively), whereas dogs with dilated hearts had slightly less pronounced arterial thickening (P=0.01). Arterial narrowing was not related to age, but fibrosis increased with age (P=0.047). Dogs that died suddenly did not have a greater number of arterial changes than other dogs with SAS. This study suggests that most dogs with SAS have intramyocardial arterial narrowing and that the risk of dying suddenly is not significantly related to the overall degree of vessel obliteration.

  14. Spiral silicon drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Lutz, G.; Kemmer, J.; Prechtel, U.; Ziemann, T.

    1988-01-01

    An advanced large area silicon photodiode (and x-ray detector), called Spiral Drift Detector, was designed, produced and tested. The Spiral Detector belongs to the family of silicon drift detectors and is an improvement of the well known Cylindrical Drift Detector. In both detectors, signal electrons created in silicon by fast charged particles or photons are drifting toward a practically point-like collection anode. The capacitance of the anode is therefore kept at the minimum (0.1pF). The concentric rings of the cylindrical detector are replaced by a continuous spiral in the new detector. The spiral geometry detector design leads to a decrease of the detector leakage current. In the spiral detector all electrons generated at the silicon-silicon oxide interface are collected on a guard sink rather than contributing to the detector leakage current. The decrease of the leakage current reduces the parallel noise of the detector. This decrease of the leakage current and the very small capacities of the detector anode with a capacitively matched preamplifier may improve the energy resolution of Spiral Drift Detectors operating at room temperature down to about 50 electrons rms. This resolution is in the range attainable at present only by cooled semiconductor detectors. 5 refs., 10 figs

  15. Performance improvement of silicon solar cells by nanoporous silicon coating

    Directory of Open Access Journals (Sweden)

    Dzhafarov T. D.

    2012-04-01

    Full Text Available In the present paper the method is shown to improve the photovoltaic parameters of screen-printed silicon solar cells by nanoporous silicon film formation on the frontal surface of the cell using the electrochemical etching. The possible mechanisms responsible for observed improvement of silicon solar cell performance are discussed.

  16. Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

    Science.gov (United States)

    Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

    2013-10-01

    Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10-40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage.

  17. Surface engineered porous silicon for stable, high performance electrochemical supercapacitors

    Science.gov (United States)

    Oakes, Landon; Westover, Andrew; Mares, Jeremy W.; Chatterjee, Shahana; Erwin, William R.; Bardhan, Rizia; Weiss, Sharon M.; Pint, Cary L.

    2013-01-01

    Silicon materials remain unused for supercapacitors due to extreme reactivity of silicon with electrolytes. However, doped silicon materials boast a low mass density, excellent conductivity, a controllably etched nanoporous structure, and combined earth abundance and technological presence appealing to diverse energy storage frameworks. Here, we demonstrate a universal route to transform porous silicon (P-Si) into stable electrodes for electrochemical devices through growth of an ultra-thin, conformal graphene coating on the P-Si surface. This graphene coating simultaneously passivates surface charge traps and provides an ideal electrode-electrolyte electrochemical interface. This leads to 10–40X improvement in energy density, and a 2X wider electrochemical window compared to identically-structured unpassivated P-Si. This work demonstrates a technique generalizable to mesoporous and nanoporous materials that decouples the engineering of electrode structure and electrochemical surface stability to engineer performance in electrochemical environments. Specifically, we demonstrate P-Si as a promising new platform for grid-scale and integrated electrochemical energy storage. PMID:24145684

  18. Neuromorphic Silicon Neuron Circuits

    Science.gov (United States)

    Indiveri, Giacomo; Linares-Barranco, Bernabé; Hamilton, Tara Julia; van Schaik, André; Etienne-Cummings, Ralph; Delbruck, Tobi; Liu, Shih-Chii; Dudek, Piotr; Häfliger, Philipp; Renaud, Sylvie; Schemmel, Johannes; Cauwenberghs, Gert; Arthur, John; Hynna, Kai; Folowosele, Fopefolu; Saighi, Sylvain; Serrano-Gotarredona, Teresa; Wijekoon, Jayawan; Wang, Yingxue; Boahen, Kwabena

    2011-01-01

    Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain–machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance-based Hodgkin–Huxley models to bi-dimensional generalized adaptive integrate and fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips. PMID:21747754

  19. Silicon containing copolymers

    CERN Document Server

    Amiri, Sahar; Amiri, Sanam

    2014-01-01

    Silicones have unique properties including thermal oxidative stability, low temperature flow, high compressibility, low surface tension, hydrophobicity and electric properties. These special properties have encouraged the exploration of alternative synthetic routes of well defined controlled microstructures of silicone copolymers, the subject of this Springer Brief. The authors explore the synthesis and characterization of notable block copolymers. Recent advances in controlled radical polymerization techniques leading to the facile synthesis of well-defined silicon based thermo reversible block copolymers?are described along with atom transfer radical polymerization (ATRP), a technique utilized to develop well-defined functional thermo reversible block copolymers. The brief also focuses on Polyrotaxanes and their great potential as stimulus-responsive materials which produce poly (dimethyl siloxane) (PDMS) based thermo reversible block copolymers.

  20. Neuromorphic silicon neuron circuits

    Directory of Open Access Journals (Sweden)

    Giacomo eIndiveri

    2011-05-01

    Full Text Available Hardware implementations of spiking neurons can be extremely useful for a large variety of applications, ranging from high-speed modeling of large-scale neural systems to real-time behaving systems, to bidirectional brain-machine interfaces. The specific circuit solutions used to implement silicon neurons depend on the application requirements. In this paper we describe the most common building blocks and techniques used to implement these circuits, and present an overview of a wide range of neuromorphic silicon neurons, which implement different computational models, ranging from biophysically realistic and conductance based Hodgkin-Huxley models to bi-dimensional generalized adaptive Integrate and Fire models. We compare the different design methodologies used for each silicon neuron design described, and demonstrate their features with experimental results, measured from a wide range of fabricated VLSI chips.

  1. Floating Silicon Method

    Energy Technology Data Exchange (ETDEWEB)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  2. The LHCb Silicon Tracker

    Energy Technology Data Exchange (ETDEWEB)

    Tobin, Mark, E-mail: Mark.Tobin@epfl.ch

    2016-09-21

    The LHCb experiment is dedicated to the study of heavy flavour physics at the Large Hadron Collider (LHC). The primary goal of the experiment is to search for indirect evidence of new physics via measurements of CP violation and rare decays of beauty and charm hadrons. The LHCb detector has a large-area silicon micro-strip detector located upstream of a dipole magnet, and three tracking stations with silicon micro-strip detectors in the innermost region downstream of the magnet. These two sub-detectors form the LHCb Silicon Tracker (ST). This paper gives an overview of the performance and operation of the ST during LHC Run 1. Measurements of the observed radiation damage are shown and compared to the expectation from simulation.

  3. Narrow plasmon resonances enabled by quasi-freestanding bilayer epitaxial graphene

    Science.gov (United States)

    Daniels, Kevin M.; Jadidi, M. Mehdi; Sushkov, Andrei B.; Nath, Anindya; Boyd, Anthony K.; Sridhara, Karthik; Drew, H. Dennis; Murphy, Thomas E.; Myers-Ward, Rachael L.; Gaskill, D. Kurt

    2017-06-01

    Exploiting the underdeveloped terahertz range (~1012-1013 Hz) of the electromagnetic spectrum could advance many scientific fields (e.g. medical imaging for the identification of tumors and other biological tissues, non-destructive evaluation of hidden objects or ultra-broadband communication). Despite the benefits of operating in this regime, generation, detection and manipulation have proven difficult, as few materials have functional interactions with THz radiation. In contrast, graphene supports resonances in the THz regime through structural confinement of surface plasmons, which can lead to enhanced absorption. In prior work, the achievable plasmon resonances in such structures have been limited by multiple electron scattering mechanisms (i.e. large carrier scattering rates) which greatly broaden the resonance (>100 cm-1 3 THz). We report the narrowest room temperature Drude response to-date, 30 cm-1 (0.87 THz), obtained using quasi-free standing bilayer epitaxial graphene (QFS BLG) synthesized on (0 0 0 1)6H-SiC. This narrow response is due to a 4-fold increase in carrier mobility and improved thickness and electronic uniformity of QFS BLG. Moreover, QFS BLG samples patterned into microribbons targeting 1.8-5.7 THz plasmon resonances also exhibit low scattering rates (37-53 cm-1). Due to the improved THz properties of QFS BLG, the effects of e-beam processing on carrier scattering rates was determined and we found that fabrication conditions can be tuned to minimize the impact on optoelectronic properties. In addition, electrostatic gating of patterned QFS BLG shows narrow band THz amplitude modulation. Taken together, these properties of QFS BLG should facilitate future development of THz optoelectronic devices for monochromatic applications.

  4. Removal of inclusions from silicon

    Science.gov (United States)

    Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

    2009-11-01

    The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

  5. Silicon photonic integration in telecommunications

    Directory of Open Access Journals (Sweden)

    Christopher Richard Doerr

    2015-08-01

    Full Text Available Silicon photonics is the guiding of light in a planar arrangement of silicon-based materials to perform various functions. We focus here on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications. As the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases, silicon photonics makes more and more economic sense.

  6. Silicon Tracking Upgrade at CDF

    International Nuclear Information System (INIS)

    Kruse, M.C.

    1998-04-01

    The Collider Detector at Fermilab (CDF) is scheduled to begin recording data from Run II of the Fermilab Tevatron in early 2000. The silicon tracking upgrade constitutes both the upgrade to the CDF silicon vertex detector (SVX II) and the new Intermediate Silicon Layers (ISL) located at radii just beyond the SVX II. Here we review the design and prototyping of all aspects of these detectors including mechanical design, data acquisition, and a trigger based on silicon tracking

  7. Silicon microphones - a Danish perspective

    DEFF Research Database (Denmark)

    Bouwstra, Siebe; Storgaard-Larsen, Torben; Scheeper, Patrick

    1998-01-01

    Two application areas of microphones are discussed, those for precision measurement and those for hearing instruments. Silicon microphones are under investigation for both areas, and Danish industry plays a key role in both. The opportunities of silicon, as well as the challenges and expectations......, are discussed. For precision measurement the challenge for silicon is large, while for hearing instruments silicon seems to be very promising....

  8. Tunnel Oxides Formed by Field-Induced Anodisation for Passivated Contacts of Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Jingnan Tong

    2018-02-01

    Full Text Available Tunnel silicon oxides form a critical component for passivated contacts for silicon solar cells. They need to be sufficiently thin to allow carriers to tunnel through and to be uniform both in thickness and stoichiometry across the silicon wafer surface, to ensure uniform and low recombination velocities if high conversion efficiencies are to be achieved. This paper reports on the formation of ultra-thin silicon oxide layers by field-induced anodisation (FIA, a process that ensures uniform oxide thickness by passing the anodisation current perpendicularly through the wafer to the silicon surface that is anodised. Spectroscopical analyses show that the FIA oxides contain a lower fraction of Si-rich sub-oxides compared to wet-chemical oxides, resulting in lower recombination velocities at the silicon and oxide interface. This property along with its low temperature formation highlights the potential for FIA to be used to form low-cost tunnel oxide layers for passivated contacts of silicon solar cells.

  9. A CHF Model in Narrow Gaps under Saturated Boiling

    International Nuclear Information System (INIS)

    Park, Suki; Kim, Hyeonil; Park, Cheol

    2014-01-01

    Many researchers have paid a great attention to the CHF in narrow gaps due to enormous industrial applications. Especially, a great number of researches on the CHF have been carried out in relation to nuclear safety issues such as in-vessel retention for nuclear power plants during a severe accident. Analytical studies to predict the CHF in narrow gaps have been also reported. Yu et al. (2012) developed an analytical model to predict the CHF on downward facing and inclined heaters based on the model of Kandlikar et al. (2001) for an upward facing heater. A new theoretical model is developed to predict the CHF in narrow gaps under saturated pool boiling. This model is applicable when one side of coolant channels or both sides are heated including the effects of heater orientation. The present model is compared with the experimental CHF data obtained in narrow gaps. A new analytical CHF model is proposed to predict CHF for narrow gaps under saturated pool boiling. This model can be applied to one-side or two-sides heating surface and also consider the effects of heater orientation on CHF. The present model is compared with the experimental data obtained in narrow gaps with one heater. The comparisons indicate that the present model shows a good agreement with the experimental CHF data in the horizontal annular tubes. However, it generally under-predicts the experimental data in the narrow rectangular gaps except the data obtained in the gap thickness of 10 mm and the horizontal downward facing heater

  10. CMS silicon tracker developments

    International Nuclear Information System (INIS)

    Civinini, C.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B.; Ciampolini, P.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.D.R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; Focardi, E.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Luebelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B. Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2002-01-01

    The CMS Silicon tracker consists of 70 m 2 of microstrip sensors which design will be finalized at the end of 1999 on the basis of systematic studies of device characteristics as function of the most important parameters. A fundamental constraint comes from the fact that the detector has to be operated in a very hostile radiation environment with full efficiency. We present an overview of the current results and prospects for converging on a final set of parameters for the silicon tracker sensors

  11. Silicon hybrid integration

    International Nuclear Information System (INIS)

    Li Xianyao; Yuan Taonu; Shao Shiqian; Shi Zujun; Wang Yi; Yu Yude; Yu Jinzhong

    2011-01-01

    Recently,much attention has concentrated on silicon based photonic integrated circuits (PICs), which provide a cost-effective solution for high speed, wide bandwidth optical interconnection and optical communication.To integrate III-V compounds and germanium semiconductors on silicon substrates,at present there are two kinds of manufacturing methods, i.e., heteroepitaxy and bonding. Low-temperature wafer bonding which can overcome the high growth temperature, lattice mismatch,and incompatibility of thermal expansion coefficients during heteroepitaxy, has offered the possibility for large-scale heterogeneous integration. In this paper, several commonly used bonding methods are reviewed, and the future trends of low temperature wafer bonding envisaged. (authors)

  12. Strained Silicon Photonics

    Directory of Open Access Journals (Sweden)

    Ralf B. Wehrspohn

    2012-05-01

    Full Text Available A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.

  13. Elite silicon and solar power

    International Nuclear Information System (INIS)

    Yasamanov, N.A.

    2000-01-01

    The article is of popular character, the following issues being considered: conversion of solar energy into electric one, solar batteries in space and on the Earth, growing of silicon large-size crystals, source material problems relating to silicon monocrystals production, outlooks of solar silicon batteries production [ru

  14. Ballistic phonon transport in holey silicon.

    Science.gov (United States)

    Lee, Jaeho; Lim, Jongwoo; Yang, Peidong

    2015-05-13

    When the size of semiconductors is smaller than the phonon mean free path, phonons can carry heat with no internal scattering. Ballistic phonon transport has received attention for both theoretical and practical aspects because Fourier's law of heat conduction breaks down and the heat dissipation in nanoscale transistors becomes unpredictable in the ballistic regime. While recent experiments demonstrate room-temperature evidence of ballistic phonon transport in various nanomaterials, the thermal conductivity data for silicon in the length scale of 10-100 nm is still not available due to experimental challenges. Here we show ballistic phonon transport prevails in the cross-plane direction of holey silicon from 35 to 200 nm. The thermal conductivity scales linearly with the length (thickness) even though the lateral dimension (neck) is as narrow as 20 nm. We assess the impact of long-wavelength phonons and predict a transition from ballistic to diffusive regime using scaling models. Our results support strong persistence of long-wavelength phonons in nanostructures and are useful for controlling phonon transport for thermoelectrics and potential phononic applications.

  15. Improvements in numerical modelling of highly injected crystalline silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Altermatt, P.P. [University of New South Wales, Centre for Photovoltaic Engineering, 2052 Sydney (Australia); Sinton, R.A. [Sinton Consulting, 1132 Green Circle, 80303 Boulder, CO (United States); Heiser, G. [University of NSW, School of Computer Science and Engineering, 2052 Sydney (Australia)

    2001-01-01

    We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, n{sub i}=1.00x10{sup 10}cm{sup -3}, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of n{sub i} if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

  16. Out-of-plane strain effect on silicon-based flexible FinFETs

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-21

    Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.

  17. Out-of-plane strain effect on silicon-based flexible FinFETs

    KAUST Repository

    Ghoneim, Mohamed T.; Alfaraj, Nasir; Sevilla, Galo T.; Fahad, Hossain M.; Hussain, Muhammad Mustafa

    2015-01-01

    Summary form only given. We report out-of-plane strain effect on silicon based flexible FinFET, with sub 20 nm wide fins and hafnium silicate based high-κ gate dielectric. Since ultra-thin inorganic solid state substrates become flexible with reduced thickness, flexing induced strain does not enhance performance. However, detrimental effects arise as the devices are subject to various out-of-plane stresses (compressive and tensile) along the channel length.

  18. STUDIES ON BIOLUMINESCENCE : XVII. FLUORESCENCE AND INHIBITION OF LUMINESCENCE IN CTENOPHORES BY ULTRA-VIOLET LIGHT.

    Science.gov (United States)

    Harvey, E N

    1925-01-20

    1. Small dumps of the luminous cells of Mnemiopsis cannot readily be stimulated mechanically but will luminesce on treatment with saponin solution. Larger groups of luminous cells (such as are connected with two paddle plates) luminesce on mechanical stimulation. This suggests that mechanical stimulation to luminesce occurs chiefly through a nerve mechanism which has been broken up in the small dumps of luminous tissue. 2. The smallest bits of luminous tissue, even cells freed from the animal by agitation, that will pass through filter paper, lose their power to luminesce in daylight and regain it (at least partially) in the dark. 3. Luminescence of the whole animal and of individual cells is suppressed by near ultra-violet light (without visible light). 4. Inhibition in ultra-violet light is not due to stimulation (by the ultra-violet light) of the animal to luminesce, thereby using up the store of photogenic material. 5. Animals stimulated mechanically several times and placed in ultra-violet light show a luminescence along the meridians in the same positions as the luminescence that appears on stimulation. This luminescence in the ultra-violet or "tonic luminescence," is not obtained with light adapted ctenophores and is interpreted to be a fluorescence of the product of oxidation of the photogenic material. 6. Marked fluorescence of the luminous organ of the glowworm (Photuris) and of the luminous slime of Chatopterus may be observed in ultra-violet but no marked fluorescence of the luminous substances of Cypridina is apparent. 7. Evidence is accumulating to show a close relation between fluorescent and chemiluminescent substances in animals, similar to that described for unsaturated silicon compounds and the Grignard reagents.

  19. Selective formation of porous silicon

    Science.gov (United States)

    Fathauer, Robert W. (Inventor); Jones, Eric W. (Inventor)

    1993-01-01

    A pattern of porous silicon is produced in the surface of a silicon substrate by forming a pattern of crystal defects in said surface, preferably by applying an ion milling beam through openings in a photoresist layer to the surface, and then exposing said surface to a stain etchant, such as HF:HNO3:H2O. The defected crystal will preferentially etch to form a pattern of porous silicon. When the amorphous content of the porous silicon exceeds 70 percent, the porous silicon pattern emits visible light at room temperature.

  20. Silicon nitride nanosieve membrane

    NARCIS (Netherlands)

    Tong, D.H.; Jansen, Henricus V.; Gadgil, V.J.; Bostan, C.G.; Berenschot, Johan W.; van Rijn, C.J.M.; Elwenspoek, Michael Curt

    2004-01-01

    An array of very uniform cylindrical nanopores with a pore diameter as small as 25 nm has been fabricated in an ultrathin micromachined silicon nitride membrane using focused ion beam (FIB) etching. The pore size of this nanosieve membrane was further reduced to below 10 nm by coating it with

  1. OPAL Silicon Tungsten Luminometer

    CERN Multimedia

    OPAL was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The Silicon Tungsten Luminometer was part of OPAL's calorimeter which was used to measure the energy of particles. Most particles end their journey in calorimeters. These detectors measure the energy deposited when particles are slowed down and stopped.

  2. Silicon graphene Bragg gratings.

    Science.gov (United States)

    Capmany, José; Domenech, David; Muñoz, Pascual

    2014-03-10

    We propose the use of interleaved graphene sections on top of a silicon waveguide to implement tunable Bragg gratings. The filter central wavelength and bandwidth can be controlled changing the chemical potential of the graphene sections. Apodization techniques are also presented.

  3. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  4. Silicon oxynitride based photonics

    NARCIS (Netherlands)

    Worhoff, Kerstin; Klein, E.J.; Hussein, M.G.; Driessen, A.; Marciniak, M.; Jaworski, M.; Zdanowicz, M.

    2008-01-01

    Silicon oxynitride is a very attractive material for integrated optics. Besides possessing excellent optical properties it can be deposited with refractive indices varying over a wide range by tuning the material composition. In this contribution we will summarize the key properties of this material

  5. ALICE Silicon Pixel Detector

    CERN Multimedia

    Manzari, V

    2013-01-01

    The Silicon Pixel Detector (SPD) forms the innermost two layers of the 6-layer barrel Inner Tracking System (ITS). The SPD plays a key role in the determination of the position of the primary collision and in the reconstruction of the secondary vertices from particle decays.

  6. ALICE Silicon Strip Detector

    CERN Multimedia

    Nooren, G

    2013-01-01

    The Silicon Strip Detector (SSD) constitutes the two outermost layers of the Inner Tracking System (ITS) of the ALICE Experiment. The SSD plays a crucial role in the tracking of the particles produced in the collisions connecting the tracks from the external detectors (Time Projection Chamber) to the ITS. The SSD also contributes to the particle identification through the measurement of their energy loss.

  7. DELPHI Silicon Tracker

    CERN Multimedia

    DELPHI was one of the four experiments installed at the LEP particle accelerator from 1989 - 2000. The silicon tracking detector was nearest to the collision point in the centre of the detector. It was used to pinpoint the collision and catch short-lived particles.

  8. Fabrication Method for LOBSTER-Eye Optics in Silicon

    Science.gov (United States)

    Chervenak, James; Collier, Michael; Mateo, Jennette

    2013-01-01

    Soft x-ray optics can use narrow slots to direct x-rays into a desirable pattern on a focal plane. While square-pack, square-pore, slumped optics exist for this purpose, they are costly. Silicon (Si) is being examined as a possible low-cost replacement. A fabrication method was developed for narrow slots in Si demonstrating the feasibility of stacked slot optics to replace micropores. Current micropore optics exist that have 20-micron-square pores on 26-micron pitch in glass with a depth of 1 mm and an extent of several square centimeters. Among several proposals to emulate the square pore optics are stacked slot chips with etched vertical slots. When the slots in the stack are positioned orthogonally to each other, the component will approach the soft x-ray focusing observed in the micropore optics. A specific improvement Si provides is that it can have narrower sidewalls between slots to permit greater throughput of x-rays through the optics. In general, Si can have more variation in slot geometry (width, length). Further, the sidewalls can be coated with high-Z materials to enhance reflection and potentially reduce the surface roughness of the reflecting surface. Narrow, close-packed deep slots in Si have been produced using potassium hydroxide (KOH) etching and a patterned silicon nitride (SiN) mask. The achieved slot geometries have sufficient wall smoothness, as observed through scanning electron microscope (SEM) imaging, to enable evaluation of these slot plates as an optical element for soft x-rays. Etches of different angles to the crystal plane of Si were evaluated to identify a specific range of etch angles that will enable low undercut slots in the Si material. These slots with the narrow sidewalls are demonstrated to several hundred microns in depth, and a technical path to 500-micron deep slots in a precision geometry of narrow, closepacked slots is feasible. Although intrinsic stress in ultrathin wall Si is observed, slots with walls approaching 1

  9. Multilayer Photonic Crystal for Spectral Narrowing of Emission

    Directory of Open Access Journals (Sweden)

    Zhanfang LIU

    2017-08-01

    Full Text Available Multilayer colloidal crystal has been prepared by the layer-by-layer deposition of silica microspheres on a glass slide. Each layer is a slab consisting of a fcc close-packed colloidal arrays. By properly choosing the sizes of spheres, the whole spectral feature of multilayer colloidal crystal can be tuned. Here, we engineered a multilayer superlattice structure with an effective passband between two stop bands. This gives a strong narrowing effect on emission spectrum. With the stop bands at the shortwave and longwave edges of emission spectrum, the passband in the central wavelength region can be regarded as a strong decrease of suppression effect and enhancement of a narrow wavelength region of emission. The spectral narrowing modification effect of suitably engineered colloidal crystals shows up their importance in potential application as optical filters and lasing devices.DOI: http://dx.doi.org/10.5755/j01.ms.23.3.16320

  10. CT demonstration of pharyngeal narrowing in adult obstructive sleep apnea

    International Nuclear Information System (INIS)

    Bohlman, M.E.; Haponik, E.F.; Smith, P.L.; Allen, R.P.; Bleecker, E.R.; Goldman, S.M.

    1983-01-01

    Sleep apnea is a major cause of daytime hypersomnolence. Among the proposed etiologies, focal obstruction of the airways at the level of the pharynx has been suggested but not proven. Using computed tomography, the cross-sectional area of the airway can be readily assessed. Thirty-three adults with clinically proven sleep apnea and 12 normal adults underwent systematic computed tomography of the neck. Significant airway narrowing was demonstrated in all the patients with obstructive sleep apnea, whereas no such narrowing was seen in the controls. In 11, the narrowing was at a single level, whereas in 22 patients two or more levels were affected. This study has shown that a structurally abnormal airway may serve as an anatomic substrate for the development of sleep apnea. On the basis of this evidence, uvulopalatopharyngoplasty has been performed in two patients with relief of symptoms in one

  11. Pressure Fluctuation Characteristics of Narrow Gauge Train Running Through Tunnel

    Science.gov (United States)

    Suzuki, Masahiro; Sakuma, Yutaka

    Pressure fluctuations on the sides of narrow (1067 mm) gauge trains running in tunnels are measured for the first time to investigate the aerodynamic force acting on the trains. The present measurements are compared with earlier measurements obtained with the Shinkansen trains. The results are as follows: (1) The aerodynamic force, which stems from pressure fluctuations on the sides of cars, puts the energy into the vibration of the car body running through a tunnel. (2) While the pressure fluctuations appear only on one of the two sides of the trains running in double-track tunnels, the fluctuations in opposite phase on both sides in single-track tunnels. (3) The on-track test data of the narrow gauge trains show the same tendency as those of the Shinkansen trains, although it is suggested that the pressure fluctuations develop faster along the narrow gauge trains than the Shinkansen trains.

  12. MRI of surgically created pulmonary artery narrowing in the dog

    Energy Technology Data Exchange (ETDEWEB)

    Hernandez, R.J.; Rocchini, A.P.; Bove, E.L.; Chenevert, T.L.; Gubin, B. (Michigan Univ., Ann Arbor (USA). Dept. of Radiology)

    1989-11-01

    Narrowing of the pulmonary arteries was created surgically in twelve dogs. In six of the dogs the narrowing was central (main pulmonary artery), and in the remaining six the narrowing was located peripherally at the hilar level of the right pulmonary artery beyond the pericardial reflection. MRI and angiography were performed in all dogs. MRI clearly delineated the site of the pulmonary band and the caliber of the pulmonary artery at the site of the band in all dogs (N=6). MRI was not able to visualize any of the stenosis of the right pulmonary arteries at the hila, beyond the pericardial reflection. In addition, optimal imaging planes to depict each segment of the central pulmonary arteries were determined. The capability to image in oblique planes is essential in evaluating the morphology of the central pulmonary arteries. (orig.).

  13. MRI of surgically created pulmonary artery narrowing in the dog

    International Nuclear Information System (INIS)

    Hernandez, R.J.; Rocchini, A.P.; Bove, E.L.; Chenevert, T.L.; Gubin, B.

    1989-01-01

    Narrowing of the pulmonary arteries was created surgically in twelve dogs. In six of the dogs the narrowing was central (main pulmonary artery), and in the remaining six the narrowing was located peripherally at the hilar level of the right pulmonary artery beyond the pericardial reflection. MRI and angiography were performed in all dogs. MRI clearly delineated the site of the pulmonary band and the caliber of the pulmonary artery at the site of the band in all dogs (N=6). MRI was not able to visualize any of the stenosis of the right pulmonary arteries at the hila, beyond the pericardial reflection. In addition, optimal imaging planes to depict each segment of the central pulmonary arteries were determined. The capability to image in oblique planes is essential in evaluating the morphology of the central pulmonary arteries. (orig.)

  14. Fabrication et applications des reseaux de Bragg ultra-longs

    Science.gov (United States)

    Gagne, Mathieu

    quality ultra long fiber Bragg gratings. High quality theory matching ultra long fiber Bragg gratings up to 1 meter long are obtained for the first time. The possibility of fabricating high quality ultra long fiber Bragg grating of more than 10 cm (approximately the maximal phase mask length) opens a variety of new applications otherwise impossible with short fiber Bragg grating technology. Ultra long fiber Bragg gratings have unique characteristics such as high reflectivity, high dispersion and ultra narrow bandwidth. Those characteristics can be used to do advanced signal processing, non linear propagation experiments, distributed feedback fiber lasers and dispersion compensator for telecommunication or optical tomography. The second objective of this project is to use these ultra-long fiber Bragg gratings as an optical cavity for fiber lasers. Alot of research in the past years have been concentrated on those lasers, particularly on distributed feedback fiber lasers where the gratings spans all the gain media. A new random fiber laser configuration is presented. It is based on passive or active insertion of phase shifts along the Bragg grating to obtained a phenomenon called light localization which is the optical equivalent of Anderson localization. This complex wave phenomenon has the unique property to mimic the reflection of a uniform photonic crystal with the random diffusion of light among the elements of a random media. Being commonly obtained in fine powders which must respect a certain set of rules, the realization of 1D structures is vastly simplified in optical fibers. Two random fiber laser schemes based on light localization, one using erbium dopant and the other one Raman scattering, are demonstrated for the first time and compared to traditional distributed feedback fiber lasers.

  15. The silicon tracking system of the CBM experiment

    Energy Technology Data Exchange (ETDEWEB)

    Balog, Tomas [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

    2014-07-01

    The Compressed Baryonic Matter (CBM) experiment at FAIR will explore the phase diagram of strongly interacting matter at the highest net-baryon densities in nucleus-nucleus collisions with interaction rates up to 10 MHz. As the core tracking detector of CBM the Silicon Tracking System (STS) will be installed in the gap of the 1 T super conducting dipole magnet for reconstruction of charged particle trajectories and its momenta. The requirement on momentum resolution, Δp/p=1%, can only be achieved with an ultra-low material budget, imposing particular restrictions on the location of 2.5 million channel front-end electronics dissipating 40 KW in the fiducial volume of about 2 m{sup 3}. The concept of the STS is based on a modular structure containing 300 μm thick double-sided silicon microstrip sensors read out through ultra-thin multi-line micro-cables with fast self-triggering electronics. As central building blocks the modules consisting of each a sensor, micro-cable and front-end electronics will be mounted with lightweight carbon fiber support structures onto 8 detector stations. At the station periphery infrastructure such as power and cooling lines will be placed. The status of the STS development is summarized in the presentation, including an overview on sensors, read-out electronics, prototypes, and system integration.

  16. Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space

    Science.gov (United States)

    Wicht, A.; Bawamia, A.; Krüger, M.; Kürbis, Ch.; Schiemangk, M.; Smol, R.; Peters, A.; Tränkle, G.

    2017-02-01

    We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why hybrid micro-integration and GaAs-diode laser technology is best suited to meet the needs of such applications. The electro-optical performance achieved with hybrid micro-integrated, medium linewidth, high power distributed-feedback master-oscillator-power-amplifier modules and with medium power, narrow linewidth extended cavity diode lasers emitting at 767 nm and 780 nm are briefly described and the status of space relevant stress tests and space heritage is summarized. We also describe the performance of an ECDL operating at 1070 nm. Further, a novel and versatile technology platform is introduced that allows for integration of any type of laser system or electro-optical module that can be constructed from two GaAs chips. This facilitates, for the first time, hybrid micro-integration, e.g. of extended cavity diode laser master-oscillator-poweramplifier modules, of dual-stage optical amplifiers, or of lasers with integrated, chip-based phase modulator. As an example we describe the implementation of an ECDL-MOPA designed for experiments on ultra-cold rubidium and potassium atoms on board a sounding rocket and give basic performance parameters.

  17. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

    Science.gov (United States)

    Hassan, Ali; Jin, Yuhua; Irfan, Muhammad; Jiang, Yijian

    2018-03-01

    Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM) analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (˜ 6 nm to 10 nm) and surface roughness rms value 3 nm for thickness ˜315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD), Energy Dispersive X-ray Spectroscopy (EDS) and X-ray Photoelectron Spectroscopy (XPS) have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV) region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

  18. Acceptor-modulated optical enhancements and band-gap narrowing in ZnO thin films

    Directory of Open Access Journals (Sweden)

    Ali Hassan

    2018-03-01

    Full Text Available Fermi-Dirac distribution for doped semiconductors and Burstein-Moss effect have been correlated first time to figure out the conductivity type of ZnO. Hall Effect in the Van der Pauw configuration has been applied to reconcile our theoretical estimations which evince our assumption. Band-gap narrowing has been found in all p-type samples, whereas blue Burstein-Moss shift has been recorded in the n-type films. Atomic Force Microscopic (AFM analysis shows that both p-type and n-type films have almost same granular-like structure with minor change in average grain size (∼ 6 nm to 10 nm and surface roughness rms value 3 nm for thickness ∼315 nm which points that grain size and surface roughness did not play any significant role in order to modulate the conductivity type of ZnO. X-ray diffraction (XRD, Energy Dispersive X-ray Spectroscopy (EDS and X-ray Photoelectron Spectroscopy (XPS have been employed to perform the structural, chemical and elemental analysis. Hexagonal wurtzite structure has been observed in all samples. The introduction of nitrogen reduces the crystallinity of host lattice. 97% transmittance in the visible range with 1.4 × 107 Ω-1cm-1 optical conductivity have been detected. High absorption value in the ultra-violet (UV region reveals that NZOs thin films can be used to fabricate next-generation high-performance UV detectors.

  19. Narrow-band tunable terahertz emission from ferrimagnetic Mn{sub 3-x}Ga thin films

    Energy Technology Data Exchange (ETDEWEB)

    Awari, N. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); University of Groningen, 9747 AG Groningen (Netherlands); Kovalev, S., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Fowley, C., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Green, B.; Yildirim, O.; Lindner, J.; Fassbender, J.; Deac, A. M.; Gensch, M. [Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstr. 400, 01328 Dresden (Germany); Rode, K., E-mail: s.kovalev@hzdr.de, E-mail: c.fowley@hzdr.de, E-mail: rodek@tcd.ie; Lau, Y.-C.; Betto, D.; Thiyagarajah, N.; Coey, J. M. D. [CRANN, AMBER and School of Physics, Trinity College Dublin, Dublin 2 (Ireland); Gallardo, R. A. [Departamento de Física, Universidad Técnica Federico Santa María, Avenida España 1680, 2390123 Valparíso (Chile)

    2016-07-18

    Narrow-band terahertz emission from coherently excited spin precession in metallic ferrimagnetic Mn{sub 3-x}Ga Heusler alloy nanofilms has been observed. The efficiency of the emission, per nanometer film thickness, is comparable or higher than that of classical laser-driven terahertz sources based on optical rectification. The center frequency of the emission from the films can be tuned precisely via the film composition in the range of 0.20–0.35 THz, making this type of metallic film a candidate for efficient on-chip terahertz emitters. Terahertz emission spectroscopy is furthermore shown to be a sensitive probe of magnetic properties of ultra-thin films.

  20. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  1. Narrow-width mechanism of a=5 Ξ-state

    International Nuclear Information System (INIS)

    Kumagai-Fuse, I.; Akaishi, Y.

    1995-04-01

    Narrow-width mechanism of ≡ 5 H is discussed by calculating conversion widths to all its possible decay channels. Since the conversion processes have small reaction Q values, the three- and four- body decays are strongly suppressed owing to small phase volumes available. Decay widths to the two-body channels are significantly reduced by the distortion of emitted-particle waves. This mechanism brings about a narrow width of ≡ 5 H. The total width is estimated to be 0.87 MeV, in which the largest contribution comes from the decay into the Λ 4 H * +Λ channel. (author)

  2. Selective laser melting of hypereutectic Al-Si40-powder using ultra-short laser pulses

    Science.gov (United States)

    Ullsperger, T.; Matthäus, G.; Kaden, L.; Engelhardt, H.; Rettenmayr, M.; Risse, S.; Tünnermann, A.; Nolte, S.

    2017-12-01

    We investigate the use of ultra-short laser pulses for the selective melting of Al-Si40-powder to fabricate complex light-weight structures with wall sizes below 100 μ {m} combined with higher tensile strength and lower thermal expansion coefficient in comparison to standard Al-Si alloys. During the cooling process using conventional techniques, large primary silicon particles are formed which impairs the mechanical and thermal properties. We demonstrate that these limitations can be overcome using ultra-short laser pulses enabling the rapid heating and cooling in a non-thermal equilibrium process. We analyze the morphology characteristics and micro-structures of single tracks and thin-walled structures depending on pulse energy, repetition rate and scanning velocity utilizing pulses with a duration of 500 {fs} at a wavelength of 1030 {nm}. The possibility to specifically change and optimize the microstructure is shown.

  3. Ballistic Spin Field Effect Transistor Based on Silicon Nanowires

    Science.gov (United States)

    Osintsev, Dmitri; Sverdlov, Viktor; Stanojevic, Zlatan; Selberherr, Siegfried

    2011-03-01

    We investigate the properties of ballistic spin field-effect transistors build on silicon nanowires. An accurate description of the conduction band based on the k . p} model is necessary in thin and narrow silicon nanostructures. The subband effective mass and subband splitting dependence on the nanowire dimensions is analyzed and used in the transport calculations. The spin transistor is formed by sandwiching the nanowire between two ferromagnetic metallic contacts. Delta-function barriers at the interfaces between the contacts and the silicon channel are introduced. The major contribution to the electric field-dependent spin-orbit interaction in confined silicon systems is due to the interface-induced inversion asymmetry which is of the Dresselhaus type. We study the current and conductance through the system for the contacts being in parallel and anti-parallel configurations. Differences between the [100] and [110] orientated structures are investigated in details. This work is supported by the European Research Council through the grant #247056 MOSILSPIN.

  4. Nanofiber Anisotropic Conductive Films (ACF) for Ultra-Fine-Pitch Chip-on-Glass (COG) Interconnections

    Science.gov (United States)

    Lee, Sang-Hoon; Kim, Tae-Wan; Suk, Kyung-Lim; Paik, Kyung-Wook

    2015-11-01

    Nanofiber anisotropic conductive films (ACF) were invented, by adapting nanofiber technology to ACF materials, to overcome the limitations of ultra-fine-pitch interconnection packaging, i.e. shorts and open circuits as a result of the narrow space between bumps and electrodes. For nanofiber ACF, poly(vinylidene fluoride) (PVDF) and poly(butylene succinate) (PBS) polymers were used as nanofiber polymer materials. For PVDF and PBS nanofiber ACF, conductive particles of diameter 3.5 μm were incorporated into nanofibers by electrospinning. In ultra-fine-pitch chip-on-glass assembly, insulation was significantly improved by using nanofiber ACF, because nanofibers inside the ACF suppressed the mobility of conductive particles, preventing them from flowing out during the bonding process. Capture of conductive particles was increased from 31% (conventional ACF) to 65%, and stable electrical properties and reliability were achieved by use of nanofiber ACF.

  5. Structural defects in laser- and electron-beam annealed silicon

    International Nuclear Information System (INIS)

    Narayan, J.

    1979-01-01

    Laser and electron beam pulses provide almost an ideal source of heat by which thin layers of semiconductors can be rapidly melted and solidified with heating and cooling rates exceeding 10 80 C/sec. Microstructural modifications obtained as a function of laser parameters are examined and it is shown that both laser and electron beam pulses can be used to remove displacement damage, dislocations, dislocation loops and precipitates. Annealing of defects underneath the oxide layers in silicon is possible within a narrow energy window. The formation of cellular structure provides a rather clear evidence of melting which leads to segregation and supercooling, and subsequent cell formation

  6. Temperature-feedback direct laser reshaping of silicon nanostructures

    Science.gov (United States)

    Aouassa, M.; Mitsai, E.; Syubaev, S.; Pavlov, D.; Zhizhchenko, A.; Jadli, I.; Hassayoun, L.; Zograf, G.; Makarov, S.; Kuchmizhak, A.

    2017-12-01

    Direct laser reshaping of nanostructures is a cost-effective and fast approach to create or tune various designs for nanophotonics. However, the narrow range of required laser parameters along with the lack of in-situ temperature control during the nanostructure reshaping process limits its reproducibility and performance. Here, we present an approach for direct laser nanostructure reshaping with simultaneous temperature control. We employ thermally sensitive Raman spectroscopy during local laser melting of silicon pillar arrays prepared by self-assembly microsphere lithography. Our approach allows establishing the reshaping threshold of an individual nanostructure, resulting in clean laser processing without overheating of the surrounding area.

  7. Electrically tunable solid-state silicon nanopore ion filter

    Directory of Open Access Journals (Sweden)

    Gracheva Maria

    2006-01-01

    Full Text Available AbstractWe show that a nanopore in a silicon membrane connected to a voltage source can be used as an electrically tunable ion filter. By applying a voltage between the heavily doped semiconductor and the electrolyte, it is possible to invert the ion population inside the nanopore and vary the conductance for both cations and anions in order to achieve selective conduction of ions even in the presence of significant surface charges in the membrane. Our model based on the solution of the Poisson equation and linear transport theory indicates that in narrow nanopores substantial gain can be achieved by controlling electrically the width of the charge double layer.

  8. Narrow-linewidth Si/III-V lasers: A study of laser dynamics and nonlinear effects

    Science.gov (United States)

    Vilenchik, Yaakov Yasha

    Narrow-linewidth lasers play an important role in a wide variety of applications, from sensing and spectroscopy to optical communication and on-chip clocks. Current narrow-linewidth systems are usually implemented in doped fibers and are big, expensive, and power-hungry. Semiconductor lasers compete favorably in size, cost, and power consumption, but their linewidth is historically limited to the sub-MHz regime. However, it has been recently demonstrated that a new design paradigm, in which the optical energy is stored away from the active region in a composite high-Q resonator, has the potential to dramatically improve the coherence of the laser. This work explores this design paradigm, as applied on the hybrid Si/III-V platform. It demonstrates a record sub-KHz white-noise-floor linewidth. It further shows, both theoretically and experimentally, that this strategy practically eliminates Henry's linewidth enhancement by positioning a damped relaxation resonance at frequencies as low as 70 MHz, yielding truly quantum limited devices at frequencies of interest. In addition to this empirical contribution, this work explores the limits of performance of this platform. Here, the effect of two-photon-absorption and free-carrier-absorption are analyzed, using modified rate equations and Langevin force approach. The analysis predicts that as the intra-cavity field intensity builds up in the high-Q resonator, non-linear effects cause a new domain of performance-limiting factors. Steady-state behavior, laser dynamics, and frequency noise performance are examined in the context of this unique platform, pointing at the importance of nonlinear effects. This work offers a theoretical model predicting laser performance in light of nonlinear effects, obtaining a good agreement with experimental results from fabricated high-Q Si/III-V lasers. In addition to demonstrating unprecedented semiconductor laser performance, this work establishes a first attempt to predict and demonstrate

  9. Arsenic implantation into polycrystalline silicon and diffusion to silicon substrate

    International Nuclear Information System (INIS)

    Tsukamoto, K.; Akasaka, Y.; Horie, K.

    1977-01-01

    Arsenic implantation into polycrystalline silicon and drive-in diffusion to silicon substrate have been investigated by MeV He + backscattering analysis and also by electrical measurements. The range distributions of arsenic implanted into polycrystalline silicon are well fitted to Gaussian distributions over the energy range 60--350 keV. The measured values of R/sub P/ and ΔR/sub P/ are about 10 and 20% larger than the theoretical predictions, respectively. The effective diffusion coefficient of arsenic implanted into polycrystalline silicon is expressed as D=0.63 exp[(-3.22 eV/kT)] and is independent of the arsenic concentration. The drive-in diffusion of arsenic from the implanted polycrystalline silicon layer into the silicon substrate is significantly affected by the diffusion atmosphere. In the N 2 atmosphere, a considerable amount of arsenic atoms diffuses outward to the ambient. The outdiffusion can be suppressed by encapsulation with Si 3 N 4 . In the oxidizing atmosphere, arsenic atoms are driven inward by growing SiO 2 due to the segregation between SiO 2 and polycrystalline silicon, and consequently the drive-in diffusion of arsenic is enhanced. At the interface between the polycrystalline silicon layer and the silicon substrate, arsenic atoms are likely to segregate at the polycrystalline silicon side

  10. Silicon epitaxy on textured double layer porous silicon by LPCVD

    International Nuclear Information System (INIS)

    Cai Hong; Shen Honglie; Zhang Lei; Huang Haibin; Lu Linfeng; Tang Zhengxia; Shen Jiancang

    2010-01-01

    Epitaxial silicon thin film on textured double layer porous silicon (DLPS) was demonstrated. The textured DLPS was formed by electrochemical etching using two different current densities on the silicon wafer that are randomly textured with upright pyramids. Silicon thin films were then grown on the annealed DLPS, using low-pressure chemical vapor deposition (LPCVD). The reflectance of the DLPS and the grown silicon thin films were studied by a spectrophotometer. The crystallinity and topography of the grown silicon thin films were studied by Raman spectroscopy and SEM. The reflectance results show that the reflectance of the silicon wafer decreases from 24.7% to 11.7% after texturing, and after the deposition of silicon thin film the surface reflectance is about 13.8%. SEM images show that the epitaxial silicon film on textured DLPS exhibits random pyramids. The Raman spectrum peaks near 521 cm -1 have a width of 7.8 cm -1 , which reveals the high crystalline quality of the silicon epitaxy.

  11. Al-Si alloy point contact formation and rear surface passivation for silicon solar cells using double layer porous silicon

    International Nuclear Information System (INIS)

    Moumni, Besma; Ben Jaballah, Abdelkader; Bessais, Brahim

    2012-01-01

    Lowering the rear surface recombination velocities by a dielectric layer has fascinating advantages compared with the standard fully covered Al back-contact silicon solar cells. In this work the passivation effect by double layer porous silicon (PS) (wide band gap) and the formation of Al-Si alloy in narrow p-type Si point contact areas for rear passivated solar cells are analysed. As revealed by Fourier transform infrared spectroscopy, we found that a thin passivating aluminum oxide (Al 2 O 3 ) layer is formed. Scanning electron microscopy analysis performed in cross sections shows that with bilayer PS, liquid Al penetrates into the openings, alloying with the Si substrate at depth and decreasing the contact resistivity. At the solar cell level, the reduction in the contact area and resistivity leads to a minimization of the fill factor losses.

  12. Observations of several disruptions in PLT using soft and ultra-soft x-ray radiation

    International Nuclear Information System (INIS)

    Eames, D.R.; von Goeler, S.; Sauthoff, N.R.; Stodiek, W.

    1979-03-01

    The evolution of ultra-soft x-ray radiation (USX, hν approx. > 100 eV) is compared to that of the soft x-ray radiation (SX, hν approx. > 1000 eV) during several disruptions in PLT. Spatial resolution is obtained in both cases by arrays of silicon surface barrier detectors viewing along different chords. During some disruptions the USX behaves quite differently from the SX, and a classification is made based on the USX behavior. Different interpretations of the data are discussed, along with the possibility that these measurements may distinguish between the roles of temperature and impurity density changes during disruptions

  13. Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current.

    Science.gov (United States)

    DeRose, Christopher T; Trotter, Douglas C; Zortman, William A; Starbuck, Andrew L; Fisher, Moz; Watts, Michael R; Davids, Paul S

    2011-12-05

    We present a compact 1.3 × 4 μm2 Germanium waveguide photodiode, integrated in a CMOS compatible silicon photonics process flow. This photodiode has a best-in-class 3 dB cutoff frequency of 45 GHz, responsivity of 0.8 A/W and dark current of 3 nA. The low intrinsic capacitance of this device may enable the elimination of transimpedance amplifiers in future optical data communication receivers, creating ultra low power consumption optical communications.

  14. Ultra high temperature latent heat energy storage and thermophotovoltaic energy conversion

    OpenAIRE

    Datas Medina, Alejandro; Ramos Cabal, Alba; Martí Vega, Antonio; Cañizo Nadal, Carlos del; Luque López, Antonio

    2016-01-01

    A conceptual energy storage system design that utilizes ultra high temperature phase change materials is presented. In this system, the energy is stored in the form of latent heat and converted to electricity upon demand by TPV (thermophotovoltaic) cells. Silicon is considered in this study as PCM (phase change material) due to its extremely high latent heat (1800 J/g or 500 Wh/kg), melting point (1410 C), thermal conductivity (~25 W/mK), low cost (less than $2/kg or $4/kWh) and a...

  15. The Argument for a Narrow Conception of 'Religious Autonomy'

    DEFF Research Database (Denmark)

    Christoffersen, Lisbet

    2015-01-01

    This article argues for a both horizontal and vertical narrow concept of collective freedom of Religion. The most recent ECtHR judgments as well as the US Supreme Court Hosanna-Tabor case leads theory to establish religious autonomy based on parallel legal roders. Nordic theory has been based...

  16. Predicting soil nitrogen content using narrow-band indices from ...

    African Journals Online (AJOL)

    Optimal fertiliser applications for sustainable forest stand productivity management, whilst protecting the environment, is vital. This study estimated soil nitrogen content using leaf-level narrow-band vegetation indices derived from a hand-held 350–2 500 nm spectroradiometer. Leaf-level spectral data were collected and ...

  17. Nonstationary Narrow-Band Response and First-Passage Probability

    DEFF Research Database (Denmark)

    Krenk, Steen

    1979-01-01

    The notion of a nonstationary narrow-band stochastic process is introduced without reference to a frequency spectrum, and the joint distribution function of two consecutive maxima is approximated by use of an envelope. Based on these definitions the first passage problem is treated as a Markov po...

  18. Free-Molecular Gas Flow in Narrow (Nanoscale) Channel

    Czech Academy of Sciences Publication Activity Database

    Levdansky, V.V.; Roldugin, V.I.; Žďanov, V.M.; Ždímal, Vladimír

    2014-01-01

    Roč. 87, č. 4 (2014), s. 802-814 ISSN 1062-0125 Grant - others:BRFFI(BY) T12P-018; RFBR(RU) 12-08-90009 Institutional support: RVO:67985858 Keywords : narrow channels * free-molecular gas flow * surface diffusion Subject RIV: CF - Physical ; Theoretical Chemistry

  19. Experimental Study on Critical Power in a Hemispherical Narrow Gap

    International Nuclear Information System (INIS)

    Park, Rae-Joon; Ha, Kwang-Soon; Kim, Sang-Baik; Kim, Hee-Dong; Jeong, Ji-Hwan

    2002-01-01

    An experimental study of critical heat flux in gap (CHFG) has been performed to investigate the inherent cooling mechanism in a hemispherical narrow gap. The objectives of the CHFG test are to measure critical power from a critical heat removal rate through the hemispherical narrow gap using distilled water with experimental parameters of system pressure and gap width. The CHFG test results have shown that a countercurrent flow limitation (CCFL) brings about local dryout at the small edge region of the upper part and finally global dryout in a hemispherical narrow gap. Increases in the gap width and pressure lead to an increase in critical power. The measured values of critical power are lower than the predictions made by other empirical CHF correlations applicable to flat plate, annuli, and small spherical gaps. The measured data on critical power in the hemispherical narrow gaps have been correlated using nondimensional parameters with a range of approximately ±20%. The developed correlation has been expanded to apply the spherical geometry using the Siemens/KWU correlation

  20. Career Attainment among Healthcare Executives: Is the Gender Gap Narrowing?

    Science.gov (United States)

    Branin, Joan Julia

    2009-01-01

    Health care occupations are expected to be among the fastest growing professions in the next ten years. With such incredible growth expected in employment and wages, and with women's participation in the industry remaining strong, are women in the health care industry, particularly those in health care administration, experiencing a narrowing of…

  1. Narrow-Band Imaging: Clinical Application in Gastrointestinal Endoscopy

    Directory of Open Access Journals (Sweden)

    Sandra Barbeiro

    2018-03-01

    Full Text Available Narrow-band imaging is an advanced imaging system that applies optic digital methods to enhance endoscopic images and improves visualization of the mucosal surface architecture and microvascular pattern. Narrow-band imaging use has been suggested to be an important adjunctive tool to white-light endoscopy to improve the detection of lesions in the digestive tract. Importantly, it also allows the distinction between benign and malignant lesions, targeting biopsies, prediction of the risk of invasive cancer, delimitation of resection margins, and identification of residual neoplasia in a scar. Thus, in expert hands it is a useful tool that enables the physician to decide on the best treatment (endoscopic or surgical and management. Current evidence suggests that it should be used routinely for patients at increased risk for digestive neoplastic lesions and could become the standard of care in the near future, at least in referral centers. However, adequate training programs to promote the implementation of narrow-band imaging in daily clinical practice are needed. In this review, we summarize the current scientific evidence on the clinical usefulness of narrow-band imaging in the diagnosis and characterization of digestive tract lesions/cancers and describe the available classification systems.

  2. Note: Folded optical system for narrow forward looking probe

    International Nuclear Information System (INIS)

    Hou, Hsuan-Chao; Hah, Dooyoung; Kim, Jeonghwan; Feldman, M.

    2014-01-01

    An optical system is described in which a laser beam makes three passes through a single graded index lens, forming a focus along the optic axis. It has important applications in endoscopic probes, where the forward looking characteristic permits the avoidance of obstacles and the narrow structure makes it minimally invasive

  3. Modeling of air flow through a narrow crack

    International Nuclear Information System (INIS)

    Trojek, T.; Cechak, T.; Moucka, L.; Fronka, A.

    2004-01-01

    Radon transport in dwellings is governed to a significant extent by pressure differences and properties of transport pathways. A model of air flow through narrow cracks was created in order to facilitate prediction of air velocity and air flow. Theoretical calculations, based on numerical solution of a system of differential equations, were compared with measurements carried out on a window crack. (P.A.)

  4. Measurements of Narrow Mg II Associated Absorption Doublets with ...

    Indian Academy of Sciences (India)

    2016-01-27

    Jan 27, 2016 ... The measurement of the variations of absorption lines over time is a good method to study the physical conditions of absorbers. In this paper, we measure the variations of the line strength of 36 narrow Mg II2796, 2803 associated absorption doublets, which are imprinted on 31 quasar spectra with two ...

  5. Japanese VLBI Network Observations of a Gamma-Ray Narrow ...

    Indian Academy of Sciences (India)

    J. Astrophys. Astr. (2014) 35, 215–218 c Indian Academy of Sciences. Japanese VLBI Network Observations of a Gamma-Ray. Narrow-Line Seyfert 1 Galaxy 1H 0323+342. Kiyoaki Wajima1,∗. , Kenta Fujisawa2, Masaaki Hayashida3. & Naoki Isobe4. 1Shanghai Astronomical Observatory, Chinese Academy of Sciences,.

  6. Extrinsic stretching narrowing and anterior indentation of the rectosigmoid junction

    International Nuclear Information System (INIS)

    Schulman, A.; Fataar, S.

    1979-01-01

    Thirty-five cases of extrinsic narrowing or anterior indentation of the rectosigmoid junction (RSJ) have been studied. The RSJ lies directly behind the pouch of Douglas which is a favoured site for peritoneal metastasis, abscess and endometriosis. Any space-occupying lesion of sufficient size at this site will indent the anterior aspects of the RSJ. Causes include distension or tumour of the ileum or sigmoid colon, gross ascites (when the patient is erect), and tumours below the pelvic peritonium, such as gynaecological neoplasm and internal iliac artery aneurysm. When a desmoplastic metastasis in the pouch of Douglas infiltrates the outer layers of the RSJ, the fibrosis produces an eccentric shortening on its anterior aspect, which in turn causes a pleating of the mucosa with the folds radiating towards the shortened area. This is also seen with primary pelvic carcinomas directly adherent to the rectum, endometriosis with repeated bleeding and increasing eccentric, submucosal fibrosis, and chronic abscess in the pouch of Douglas. Not all extrinsic narrowing of the RSJ are pathological. One case of anterior indentation followed operation for rectal prolapse. Ten additional cases showed narrowing due to a technical artefact air-distended colon rising into the upper abdomen to cause stretching at the RSJ. As with ascites, this narrowing due to 'high-rise sigmoid' disappeared when the patients became recumbent and the colonic air redistributed. (author)

  7. Narrow coherent effects in πNN-dynamics

    International Nuclear Information System (INIS)

    Kudryavtsev, A.E.; Obrant, G.Z.

    1990-01-01

    Coherent effect production is considered in πNN-dynamics with resonant pion-nucleon interaction via Brueckner theory and Faddev equations. It is shown that the narrow energy and final momentum dependence can arise in the inelastic S-wave πd-scattering. The energy dependence peculiarities can have a width an order magnitude less than πN-resonance one

  8. A "Narrowing of Inquiry" in American Moral Psychology and Education

    Science.gov (United States)

    Richardson, Michael J.; Slife, Brent D.

    2013-01-01

    We explore the possibility that a priori philosophical commitments continue to result in a narrowing of inquiry in moral psychology and education where theistic worldviews are concerned. Drawing from the theories of Edward L. Thorndike and John Dewey, we examine naturalistic philosophical commitments that influenced the study of moral psychology…

  9. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  10. Ultra high energy cosmic rays

    International Nuclear Information System (INIS)

    Watson, A.A.

    1986-01-01

    Cosmic radiation was discovered 70 years ago but its origin remains an open question. The background to this problem is outlined and attempts to discover the origin of the most energetic and rarest group above 10 15 eV are described. Measurements of the energy spectrum and arrival direction pattern of the very highest energy particles, mean energy about 6 x 10 19 eV, are used to argue that these particles originate outside our galaxy. Recent evidence from the new field of ultra high energy γ-ray astronomy are discussed in the context of a galactic origin hypothesis for lower energy cosmic rays. (author)

  11. The MAJORANA experiment: an ultra-low background search for neutrinoless double-beta decay

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, D.; Aguayo Navarrete, Estanislao; Avignone, Frank T.; Back, Henning O.; Barabash, Alexander S.; Bergevin, M.; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Doe, Peter J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, Steven R.; Esterline, James H.; Fast, James E.; Fields, N.; Finnerty, P.; Fraenkle, Florian; Gehman, Victor; Giovanetti, G. K.; Green, Matthew P.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hime, Andrew; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, M. A.; Johnson, R. A.; Keeter, K.; Keller, C.; Kidd, Mary; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; LaRoque, B. H.; Leon, Jonathan D.; Leviner, L.; Loach, J. C.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Mei, Dong-Ming; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Poon, Alan; Perumpilly, Gopakumar; Prior, Gersende; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Steele, David; Strain, J.; Thomas, K.; Timkin, V.; Tornow, W.; Vanyushin, I.; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Wolfe, B. A.; Yakushev, E.; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir; Zhang, C.

    2012-12-01

    The observation of neutrinoless double-beta decay would resolve the Majorana nature of the neutrino and could provide information on the absolute scale of the neutrino mass. The initial phase of the Majorana Experiment, known as the Demonstrator, will house 40 kg of Ge in an ultra-low background shielded environment at the 4850' level of the Sanford Underground Laboratory in Lead, SD. The objective of the Demonstrator is to validate whether a future 1-tonne experiment can achieve a background goal of one count per tonne-year in a narrow region of interest around the 76Ge neutrinoless double-beta decay peak.

  12. Silicon photodiode with selective Zr/Si coating for extreme ultraviolet spectral range

    International Nuclear Information System (INIS)

    Aruev, P N; Barysheva, Mariya M; Ber, B Ya; Zabrodskaya, N V; Zabrodskii, V V; Lopatin, A Ya; Pestov, Alexey E; Petrenko, M V; Polkovnikov, V N; Salashchenko, Nikolai N; Sukhanov, V L; Chkhalo, Nikolai I

    2012-01-01

    The procedure of manufacturing silicon photodiodes with an integrated Zr/Si filter for extreme ultraviolet (EUV) spectral range is developed. A setup for measuring the sensitivity profile of detectors with spatial resolution better than 100 μm is fabricated. The optical properties of silicon photodiodes in the EUV and visible spectral ranges are investigated. Some characteristics of SPD-100UV diodes with Zr/Si coating and without it, as well as of AXUV-100 diodes, are compared. In all types of detectors a narrow region beyond the operating aperture is found to be sensitive to the visible light. (photodetectors)

  13. Nanodiamonds with silicon vacancy defects for nontoxic photostable fluorescent labeling of neural precursor cells.

    Science.gov (United States)

    Merson, Tobias D; Castelletto, Stefania; Aharonovich, Igor; Turbic, Alisa; Kilpatrick, Trevor J; Turnley, Ann M

    2013-10-15

    Nanodiamonds (NDs) containing silicon vacancy (SiV) defects were evaluated as a potential biomarker for the labeling and fluorescent imaging of neural precursor cells (NPCs). SiV-containing NDs were synthesized using chemical vapor deposition and silicon ion implantation. Spectrally, SiV-containing NDs exhibited extremely stable fluorescence and narrow bandwidth emission with an excellent signal to noise ratio exceeding that of NDs containing nitrogen-vacancy centers. NPCs labeled with NDs exhibited normal cell viability and proliferative properties consistent with biocompatibility. We conclude that SiV-containing NDs are a promising biomedical research tool for cellular labeling and optical imaging in stem cell research.

  14. Nanodiamonds carrying silicon-vacancy quantum emitters with almost lifetime-limited linewidths

    DEFF Research Database (Denmark)

    Jantzen, Uwe; Kurz, Andrea B.; Rudnicki, Daniel S.

    2016-01-01

    Colour centres in nanodiamonds are an important resource for applications in quantum sensing, biological imaging, and quantum optics. Here we report unprecedented narrow optical transitions for individual colour centres in nanodiamonds smaller than 200 nm. This demonstration has been achieved using...... the negatively charged silicon vacancy centre, which has recently received considerable attention due to its superb optical properties in bulk diamond. We have measured an ensemble of silicon-vacancy centres across numerous nanodiamonds to have an inhomogeneous distribution of 1.05 nmat 5 K. Individual spectral......, and advance the applicability of nanodiamond-hosted colour centres for quantum optics applications....

  15. Fluorescence and thermoluminescence in silicon oxide films rich in silicon

    International Nuclear Information System (INIS)

    Berman M, D.; Piters, T. M.; Aceves M, M.; Berriel V, L. R.; Luna L, J. A.

    2009-10-01

    In this work we determined the fluorescence and thermoluminescence (TL) creation spectra of silicon rich oxide films (SRO) with three different silicon excesses. To study the TL of SRO, 550 nm of SRO film were deposited by Low Pressure Chemical Vapor Deposition technique on N-type silicon substrates with resistivity in the order of 3 to 5 Ω-cm with silicon excess controlled by the ratio of the gases used in the process, SRO films with Ro= 10, 20 and 30 (12-6% silicon excess) were obtained. Then, they were thermally treated in N 2 at high temperatures to diffuse and homogenize the silicon excess. In the fluorescence spectra two main emission regions are observed, one around 400 nm and one around 800 nm. TL creation spectra were determined by plotting the integrated TL intensity as function of the excitation wavelength. (Author)

  16. The CMS silicon tracker

    International Nuclear Information System (INIS)

    Focardi, E.; Albergo, S.; Angarano, M.; Azzi, P.; Babucci, E.; Bacchetta, N.; Bader, A.; Bagliesi, G.; Basti, A.; Biggeri, U.; Bilei, G.M.; Bisello, D.; Boemi, D.; Bosi, F.; Borrello, L.; Bozzi, C.; Braibant, S.; Breuker, H.; Bruzzi, M.; Buffini, A.; Busoni, S.; Candelori, A.; Caner, A.; Castaldi, R.; Castro, A.; Catacchini, E.; Checcucci, B; Ciampolini, P.; Civinini, C.; Creanza, D.; D'Alessandro, R.; Da Rold, M.; Demaria, N.; De Palma, M.; Dell'Orso, R.; Della Marina, R.; Dutta, S.; Eklund, C.; Feld, L.; Fiore, L.; French, M.; Freudenreich, K.; Frey, A.; Fuertjes, A.; Giassi, A.; Giorgi, M.; Giraldo, A.; Glessing, B.; Gu, W.H.; Hall, G.; Hammarstrom, R.; Hebbeker, T.; Honma, A.; Hrubec, J.; Huhtinen, M.; Kaminsky, A.; Karimaki, V.; Koenig, St.; Krammer, M.; Lariccia, P.; Lenzi, M.; Loreti, M.; Leubelsmeyer, K.; Lustermann, W.; Maettig, P.; Maggi, G.; Mannelli, M.; Mantovani, G.; Marchioro, A.; Mariotti, C.; Martignon, G.; Evoy, B.Mc; Meschini, M.; Messineo, A.; Migliore, E.; My, S.; Paccagnella, A.; Palla, F.; Pandoulas, D.; Papi, A.; Parrini, G.; Passeri, D.; Pieri, M.; Piperov, S.; Potenza, R.; Radicci, V.; Raffaelli, F.; Raymond, M.; Rizzo, F.; Santocchia, A.; Schmitt, B.; Selvaggi, G.; Servoli, L.; Sguazzoni, G.; Siedling, R.; Silvestris, L.; Starodumov, A.; Stavitski, I.; Stefanini, G.; Surrow, B.; Tempesta, P.; Tonelli, G.; Tricomi, A.; Tuuva, T.; Vannini, C.; Verdini, P.G.; Viertel, G.; Xie, Z.; Yahong, Li; Watts, S.; Wittmer, B.

    2000-01-01

    This paper describes the Silicon microstrip Tracker of the CMS experiment at LHC. It consists of a barrel part with 5 layers and two endcaps with 10 disks each. About 10 000 single-sided equivalent modules have to be built, each one carrying two daisy-chained silicon detectors and their front-end electronics. Back-to-back modules are used to read-out the radial coordinate. The tracker will be operated in an environment kept at a temperature of T=-10 deg. C to minimize the Si sensors radiation damage. Heavily irradiated detectors will be safely operated due to the high-voltage capability of the sensors. Full-size mechanical prototypes have been built to check the system aspects before starting the construction

  17. Undepleted silicon detectors

    International Nuclear Information System (INIS)

    Rancoita, P.G.; Seidman, A.

    1985-01-01

    Large-size silicon detectors employing relatively low resistivity material can be used in electromagnetic calorimetry. They can operate in strong magnetic fields, under geometric constraints and with microstrip detectors a high resolution can be achieved. Low noise large capacitance oriented electronics was developed to enable good signal-to-noise ratio for single relativistic particles traversing large area detectors. In undepleted silicon detectors, the charge migration from the field-free region has been investigated by comparing the expected peak position (from the depleted layer only) of the energy-loss of relativistic electrons with the measured one. Furthermore, the undepleted detectors have been employed in a prototype of Si/W electromagnetic colorimeter. The sensitive layer was found to be systematically larger than the depleted one

  18. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  19. Amorphous silicon radiation detectors

    Science.gov (United States)

    Street, Robert A.; Perez-Mendez, Victor; Kaplan, Selig N.

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  20. Electron beam silicon purification

    Energy Technology Data Exchange (ETDEWEB)

    Kravtsov, Anatoly [SIA ' ' KEPP EU' ' , Riga (Latvia); Kravtsov, Alexey [' ' KEPP-service' ' Ltd., Moscow (Russian Federation)

    2014-11-15

    Purification of heavily doped electronic grade silicon by evaporation of N-type impurities with electron beam heating was investigated in process with a batch weight up to 50 kilos. Effective temperature of the melt, an indicative parameter suitable for purification process characterization was calculated and appeared to be stable for different load weight processes. Purified material was successfully approbated in standard CZ processes of three different companies. Each company used its standard process and obtained CZ monocrystals applicable for photovoltaic application. These facts enable process to be successfully scaled up to commercial volumes (150-300 kg) and yield solar grade silicon. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa

    2015-01-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard

  2. Electrometallurgy of Silicon

    Science.gov (United States)

    1988-01-01

    wind, plants, and water impounded in elevated reservoirs. Photovoltaic or solar cells, which convert sunlight directly to electricity, belongs tc, the...on record is that of St. Claire DeVille, who claimed that silicon was produced by electrolysing an impure melt of NaAlC14, but his material did not...this composition and purified melts were electrolysed at about 14500C in graphite crucible and using graphite electrodes. Applied potentials were

  3. Liquid Silicon Pouch Anode

    Science.gov (United States)

    2017-09-06

    Number 15/696,426 Filing Date 6 September 2017 Inventor Charles J. Patrissi et al Address any questions concerning this matter to the...silicon-based anodes during cycling, lithium insertion and deinsertion. Mitigation of this problem has long been sought and will result in improved...design shown. [0032] It will be understood that many additional changes in the details, materials, steps and arrangement of parts, which have been

  4. The CMS silicon tracker

    International Nuclear Information System (INIS)

    D'Alessandro, R.; Biggeri, U.; Bruzzi, M.; Catacchini, E.; Civinini, C.; Focardi, E.; Lenzi, M.; Loreti, M.; Meschini, M.; Parrini, G.; Pieri, M.; Albergo, S.; Boemi, D.; Potenza, R.; Tricomi, A.; Angarano, M.; Creanza, D.; Palma, M. de; Fiore, L.; Maggi, G.; My, S.; Raso, G.; Selvaggi, G.; Tempesta, P.; Azzi, P.; Bacchetta, N.; Bisello, D.; Candelori, A.; Castro, A.; Da Rold, M.; Giraldo, A.; Martignon, G.; Paccagnella, A.; Stavitsky, I.; Babucci, E.; Bartalini, P.; Bilei, G.M.; Checcucci, B.; Ciampolini, P.; Lariccia, P.; Mantovani, G.; Passeri, D.; Santocchia, A.; Servoli, L.; Wang, Y.; Bagliesi, G.; Basti, A.; Bosi, F.; Borello, L.; Bozzi, C.; Castaldi, R.; Dell'Orso, R.; Giassi, A.; Messineo, A.; Palla, F.; Raffaelli, F.; Sguazzoni, G.; Starodumov, A.; Tonelli, G.; Vannini, C.; Verdini, P.G.; Xie, Z.; Breuker, H.; Caner, A.; Elliott-Peisert, A.; Feld, L.; Glessing, B.; Hammerstrom, R.; Huhtinen, M.; Mannelli, M.; Marchioro, A.; Schmitt, B.; Stefanini, G.; Connotte, J.; Gu, W.H.; Luebelsmeyer, K.; Pandoulas, D.; Siedling, R.; Wittmer, B.; Della Marina, R.; Freudenreich, K.; Lustermann, W.; Viertel, G.; Eklund, C.; Karimaeki, V.; Skog, K.; French, M.; Hall, G.; Mc Evoy, B.; Raymond, M.; Hrubec, J.; Krammer, M.; Piperov, S.; Tuuva, T.; Watts, S.; Silvestris, L.

    1998-01-01

    The new silicon tracker layout (V4) is presented. The system aspects of the construction are discussed together with the expected tracking performance. Because of the high radiation environment in which the detectors will operate, particular care has been devoted to the study of the characteristics of heavily irradiated detectors. This includes studies on performance (charge collection, cluster size, resolution, efficiency) as a function of the bias voltage, integrated fluence, incidence angle and temperature. (author)

  5. Selfsupported epitaxial silicon films

    International Nuclear Information System (INIS)

    Lazarovici, D.; Popescu, A.

    1975-01-01

    The methods of removing the p or p + support of an n-type epitaxial silicon layer using electrochemical etching are described. So far, only n + -n junctions have been processed. The condition of anodic dissolution for some values of the support and layer resistivity are given. By this method very thin single crystal selfsupported targets of convenient areas can be obtained for channeling - blocking experiments

  6. Silicon and Civilization,

    Science.gov (United States)

    1980-11-04

    of a diamond. 7. The particular physical and chemical properties of silicon resulted in the fact that in the periodic system it was found in the III...small quantities. Silica is found in blades of grass and grain, in reed and bamboo shoots, where it serves to stiffen the stalk. 2. Diatomite ... properties desired in technology. Quartz glass is very resistant to temperature change since it has a very small coefficient of thermal expansion, is

  7. High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

    KAUST Repository

    Sevilla, Galo T.

    2016-02-29

    Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

  8. Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process

    KAUST Repository

    Ghoneim, Mohamed T.

    2013-11-20

    We report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show that our approach to transform bulk silicon (100) into a flexible fabric adds an inherent advantage of enabling higher integration density dynamic random access memory (DRAM) on the same chip area. Our approach is to release an ultra-thin silicon (100) fabric (25 μm thick) from the bulk silicon wafer, then build MIMCAPs using sputtered aluminium electrodes and successive atomic layer depositions (ALD) without break-ing the vacuum of a high-κ aluminium oxide sandwiched between two tantalum nitride layers. This result shows that we can obtain flexible electronics on silicon without sacrificing the high density integration aspects and also utilize the non-planar geometry associated with fabrication process to obtain a higher integration density compared to bulk silicon integration due to an increased normalized capacitance per unit planar area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Electrochemical and hydrothermal deposition of ZnO on silicon: from continuous films to nanocrystals

    International Nuclear Information System (INIS)

    Balucani, M.; Nenzi, P.; Chubenko, E.; Klyshko, A.; Bondarenko, V.

    2011-01-01

    This article presents the study of the electrochemical deposition of zinc oxide from the non-aqueous solution based on dimethyl sulfoxide and zinc chloride into the porous silicon matrix. The features of the deposition process depending on the thickness of the porous silicon layer are presented. It is shown that after deposition process the porous silicon matrix is filled with zinc oxide nanocrystals with a diameter of 10–50 nm. The electrochemically deposited zinc oxide layers on top of porous silicon are shown to have a crystalline structure. It is also shown that zinc oxide crystals formed by hydrothermal method on the surface of electrochemically deposited zinc oxide film demonstrate ultra-violet luminescence. The effect of the porous silicon layer thickness on the morphology of the zinc oxide is shown. The structures obtained demonstrated two luminescence bands peaking at the 375 and 600 nm wavelengths. Possible applications of ZnO nanostructures, porous and continuous polycrystalline ZnO films such as gas sensors, light-emitting diodes, photovoltaic devices, and nanopiezo energy generators are considered. Aspects of integration with conventional silicon technology are also discussed.

  10. Polarization-independent all-silicon dielectric metasurfaces in the terahertz regime

    KAUST Repository

    Zhang, Huifang; Zhang, Xueqian; Xu, Quan; Wang, Qiu; Xu, Yuehong; Wei, Minggui; Li, Yanfeng; Gu, Jianqiang; Tian, Zhen; Ouyang, Chunmei; Zhang, Xixiang; Hu, Cong; Han, Jiaguang; Zhang, Weili

    2017-01-01

    Dielectric metasurfaces have achieved great success in realizing high-efficiency wavefront control in the optical and infrared ranges. Here, we experimentally demonstrate several efficient, polarization-independent, all-silicon dielectric metasurfaces in the terahertz regime. The metasurfaces are composed of cylindrical silicon pillars on a silicon substrate, which can be easily fabricated using etching technology for semiconductors. By locally tailoring the diameter of the pillars, full control over abrupt phase changes can be achieved. To show the controlling ability of the metasurfaces, an anomalous deflector, three Bessel beam generators, and three vortex beam generators are fabricated and characterized. We also show that the proposed metasurfaces can be easily combined to form composite devices with extended functionalities. The proposed controlling method has promising applications in developing low-loss, ultra-compact spatial terahertz modulation devices. (C) 2017 Chinese Laser Press

  11. Polarization-independent all-silicon dielectric metasurfaces in the terahertz regime

    KAUST Repository

    Zhang, Huifang

    2017-12-11

    Dielectric metasurfaces have achieved great success in realizing high-efficiency wavefront control in the optical and infrared ranges. Here, we experimentally demonstrate several efficient, polarization-independent, all-silicon dielectric metasurfaces in the terahertz regime. The metasurfaces are composed of cylindrical silicon pillars on a silicon substrate, which can be easily fabricated using etching technology for semiconductors. By locally tailoring the diameter of the pillars, full control over abrupt phase changes can be achieved. To show the controlling ability of the metasurfaces, an anomalous deflector, three Bessel beam generators, and three vortex beam generators are fabricated and characterized. We also show that the proposed metasurfaces can be easily combined to form composite devices with extended functionalities. The proposed controlling method has promising applications in developing low-loss, ultra-compact spatial terahertz modulation devices. (C) 2017 Chinese Laser Press

  12. Role of oxygen in surface segregation of metal impurities in silicon poly- and bicrystals

    Energy Technology Data Exchange (ETDEWEB)

    Amarray, E.; Deville, J.P.

    1987-07-01

    Metal impurities at surfaces of polycrystalline silicon ribbons have been characterized by surface sensitive methods. Oxygen and heat treatments were found to be a driving force for surface segregation of these impurities. To better analyse their influence and their possible incidence in gettering, model studies were undertaken on Czochralski grown silicon bicrystals. Two main factors of surface segregation have been studied: the role of an ultra-thin oxide layer and the effect of heat treatments. The best surface purification was obtained after an annealing process at 750/sup 0/C of a previously oxidized surface at 450/sup 0/C. This was related to the formation of SiO clusters, followed by a coalescence of SiO/sub 4/ units leading to the subsequent injection of silicon self-interstitials in the lattice.

  13. Porous silicon: silicon quantum dots for photonic applications

    International Nuclear Information System (INIS)

    Pavesi, L.; Guardini, R.

    1996-01-01

    Porous silicon formation and structure characterization are briefly illustrated. Its luminescence properties rae presented and interpreted on the basis of exciton recombination in quantum dot structures: the trap-controlled hopping mechanism is used to describe the recombination dynamics. Porous silicon application to photonic devices is considered: porous silicon multilayer in general, and micro cavities in particular are described. The present situation in the realization of porous silicon LEDs is considered, and future developments in this field of research are suggested. (author). 30 refs., 30 figs., 13 tabs

  14. Photovoltaic characteristics of porous silicon /(n+ - p) silicon solar cells

    International Nuclear Information System (INIS)

    Dzhafarov, T.D.; Aslanov, S.S.; Ragimov, S.H.; Sadigov, M.S.; Nabiyeva, A.F.; Yuksel, Aydin S.

    2012-01-01

    Full text : The purpose of this work is to improve the photovoltaic parameters of the screen-printed silicon solar cells by formation the nano-porous silicon film on the frontal surface of the cell. The photovoltaic characteristics of two type silicon solar cells with and without porous silicon layer were measured and compared. A remarkable increment of short-circuit current density and the efficiency by 48 percent and 20 percent, respectively, have been achieved for PS/(n + - pSi) solar cell comparing to (n + - p)Si solar cell without PS layer

  15. Ultra-Deepwater Production Systems

    Energy Technology Data Exchange (ETDEWEB)

    Ken L. Smith; Marc E. Leveque

    2005-05-31

    The report herein is a summary of the work performed on three projects to demonstrate hydrocarbon drilling and production methods applicable to deep and ultra deepwater field developments in the Gulf of Mexico and other like applications around the world. This work advances technology that could lead to more economic development and exploitation of reserves in ultra-deep water or remote areas. The first project is Subsea Processing. Its scope includes a review of the ''state of the art'' in subsea components to enable primary production process functions such as first stage liquids and gas separation, flow boosting, chemical treatment, flow metering, etc. These components are then combined to allow for the elimination of costly surface production facilities at the well site. A number of studies were then performed on proposed field development projects to validate the economic potential of this technology. The second project involved the design and testing of a light weight production riser made of composite material. The proposed design was to meet an actual Gulf of Mexico deepwater development project. The various engineering and testing work is reviewed, including test results. The third project described in this report encompasses the development and testing of a close tolerance liner drilling system, a new technology aimed at reducing deepwater drilling costs. The design and prototype testing in a test well are described in detail.

  16. Silicon photonics fundamentals and devices

    CERN Document Server

    Deen, M Jamal

    2012-01-01

    The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: * Basic Properties of Silicon * Quantum Wells, Wires, Dots and Superlattices * Absorption Processes in Semiconductors * Light Emitters in Silicon * Photodetectors , Photodiodes and Phototransistors * Raman Lasers including Raman Scattering * Guided Lightwaves * Planar Waveguide Devices * Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines ...

  17. Radiation Hardening of Silicon Detectors

    CERN Multimedia

    Leroy, C; Glaser, M

    2002-01-01

    %RD48 %title\\\\ \\\\Silicon detectors will be widely used in experiments at the CERN Large Hadron Collider where high radiation levels will cause significant bulk damage. In addition to increased leakage current and charge collection losses worsening the signal to noise, the induced radiation damage changes the effective doping concentration and represents the limiting factor to long term operation of silicon detectors. The objectives are to develop radiation hard silicon detectors that can operate beyond the limits of the present devices and that ensure guaranteed operation for the whole lifetime of the LHC experimental programme. Radiation induced defect modelling and experimental results show that the silicon radiation hardness depends on the atomic impurities present in the initial monocrystalline material.\\\\ \\\\ Float zone (FZ) silicon materials with addition of oxygen, carbon, nitrogen, germanium and tin were produced as well as epitaxial silicon materials with epilayers up to 200 $\\mu$m thickness. Their im...

  18. Consumers' conceptualization of ultra-processed foods.

    Science.gov (United States)

    Ares, Gastón; Vidal, Leticia; Allegue, Gimena; Giménez, Ana; Bandeira, Elisa; Moratorio, Ximena; Molina, Verónika; Curutchet, María Rosa

    2016-10-01

    Consumption of ultra-processed foods has been associated with low diet quality, obesity and other non-communicable diseases. This situation makes it necessary to develop educational campaigns to discourage consumers from substituting meals based on unprocessed or minimally processed foods by ultra-processed foods. In this context, the aim of the present work was to investigate how consumers conceptualize the term ultra-processed foods and to evaluate if the foods they perceive as ultra-processed are in concordance with the products included in the NOVA classification system. An online study was carried out with 2381 participants. They were asked to explain what they understood by ultra-processed foods and to list foods that can be considered ultra-processed. Responses were analysed using inductive coding. The great majority of the participants was able to provide an explanation of what ultra-processed foods are, which was similar to the definition described in the literature. Most of the participants described ultra-processed foods as highly processed products that usually contain additives and other artificial ingredients, stressing that they have low nutritional quality and are unhealthful. The most relevant products for consumers' conceptualization of the term were in agreement with the NOVA classification system and included processed meats, soft drinks, snacks, burgers, powdered and packaged soups and noodles. However, some of the participants perceived processed foods, culinary ingredients and even some minimally processed foods as ultra-processed. This suggests that in order to accurately convey their message, educational campaigns aimed at discouraging consumers from consuming ultra-processed foods should include a clear definition of the term and describe some of their specific characteristics, such as the type of ingredients included in their formulation and their nutritional composition. Copyright © 2016 Elsevier Ltd. All rights reserved.

  19. A novel ultra-planar, long-stroke and low-voltage piezoelectric micromirror

    Science.gov (United States)

    Bakke, Thor; Vogl, Andreas; Żero, Oleg; Tyholdt, Frode; Johansen, Ib-Rune; Wang, Dag

    2010-06-01

    A novel piston-type micromirror with a stroke of up to 20 µm at 20 V formed out of a silicon-on-insulator wafer with integrated piezoelectric actuators was designed, fabricated and characterized. The peak-to-valley planarity of a 2 mm diameter mirror was better than 15 nm, and tip-to-tip tilt upon actuation less than 30 nm. A resonance frequency of 9.8 kHz was measured. Analytical and finite element models were developed and compared to measurements. The design is based on a silicon-on-insulator wafer where the circular mirror is formed out of the handle silicon, thus forming a thick, highly rigid and ultra-planar mirror surface. The mirror plate is connected to a supporting frame through a membrane formed out of the device silicon layer. A piezoelectric actuator made of lead-zirconate-titanate (PZT) thin film is structured on top of the membrane, providing mirror deflection by deformation of the membrane. Two actuator designs were tested: one with a single ring and the other with a double ring providing bidirectional movement of the mirror. The fabricated mirrors were characterized by white light interferometry to determine the static and temporal response as well as mirror planarity.

  20. A novel ultra-planar, long-stroke and low-voltage piezoelectric micromirror

    International Nuclear Information System (INIS)

    Bakke, Thor; Vogl, Andreas; Żero, Oleg; Tyholdt, Frode; Johansen, Ib-Rune; Wang, Dag

    2010-01-01

    A novel piston-type micromirror with a stroke of up to 20 µm at 20 V formed out of a silicon-on-insulator wafer with integrated piezoelectric actuators was designed, fabricated and characterized. The peak-to-valley planarity of a 2 mm diameter mirror was better than 15 nm, and tip-to-tip tilt upon actuation less than 30 nm. A resonance frequency of 9.8 kHz was measured. Analytical and finite element models were developed and compared to measurements. The design is based on a silicon-on-insulator wafer where the circular mirror is formed out of the handle silicon, thus forming a thick, highly rigid and ultra-planar mirror surface. The mirror plate is connected to a supporting frame through a membrane formed out of the device silicon layer. A piezoelectric actuator made of lead–zirconate–titanate (PZT) thin film is structured on top of the membrane, providing mirror deflection by deformation of the membrane. Two actuator designs were tested: one with a single ring and the other with a double ring providing bidirectional movement of the mirror. The fabricated mirrors were characterized by white light interferometry to determine the static and temporal response as well as mirror planarity.

  1. Transport of nano-objects in narrow channels: influence of Brownian diffusion, confinement and particle nature.

    Science.gov (United States)

    Liot, O; Socol, M; Garcia, L; Thiéry, J; Figarol, A; Mingotaud, A F; Joseph, P

    2018-06-13

    This paper presents experimental results about transport of dilute suspensions of nano-objects in silicon-glass micrometric and sub-micrometric channels. Two kinds of objects are used: solid, rigid latex beads and spherical capsule-shaped, soft polymersomes. They are tracked using fluorescence microscopy. Three aspects are studied: confinement (ratio between particle diameter and channel depth), Brownian diffusion and particle nature. The aim of this work is to understand how these different aspects affect the transport of suspensions in narrow channels and to understand the different mechanisms at play. Concerning the solid beads we observe the appearance of two regimes, one where the experimental mean velocity is close to the expected one and another where this velocity is lower. This is directly related to a competition between confinement, Brownian diffusion and advection. These two regimes are shown to be linked to the inhomogeneity of particles distribution in the channel depth, which we experimentally deduce from velocity distributions. This inhomogeneity appears during the entrance process into the sub-micrometric channels, as for hydrodynamic separation or deterministic lateral displacement. Concerning the nature of the particles we observed a shift of transition towards the second regime likely due to the relationships between shear stress and polymersomes mechanical properties which could reduce the inhomogeneity imposed by the geometry of our device.

  2. Transport of nano-objects in narrow channels: influence of Brownian diffusion, confinement and particle nature

    Science.gov (United States)

    Liot, O.; Socol, M.; Garcia, L.; Thiéry, J.; Figarol, A.; Mingotaud, A. F.; Joseph, P.

    2018-06-01

    This paper presents experimental results about transport of dilute suspensions of nano-objects in silicon-glass micrometric and sub-micrometric channels. Two kinds of objects are used: solid, rigid latex beads and spherical capsule-shaped, soft polymersomes. They are tracked using fluorescence microscopy. Three aspects are studied: confinement (ratio between particle diameter and channel depth), Brownian diffusion and particle nature. The aim of this work is to understand how these different aspects affect the transport of suspensions in narrow channels and to understand the different mechanisms at play. Concerning the solid beads we observe the appearance of two regimes, one where the experimental mean velocity is close to the expected one and another where this velocity is lower. This is directly related to a competition between confinement, Brownian diffusion and advection. These two regimes are shown to be linked to the inhomogeneity of particles distribution in the channel depth, which we experimentally deduce from velocity distributions. This inhomogeneity appears during the entrance process into the sub-micrometric channels, as for hydrodynamic separation or deterministic lateral displacement. Concerning the nature of the particles we observed a shift of transition towards the second regime likely due to the relationships between shear stress and polymersomes mechanical properties which could reduce the inhomogeneity imposed by the geometry of our device.

  3. Amorphous silicon based particle detectors

    OpenAIRE

    Wyrsch, N.; Franco, A.; Riesen, Y.; Despeisse, M.; Dunand, S.; Powolny, F.; Jarron, P.; Ballif, C.

    2012-01-01

    Radiation hard monolithic particle sensors can be fabricated by a vertical integration of amorphous silicon particle sensors on top of CMOS readout chip. Two types of such particle sensors are presented here using either thick diodes or microchannel plates. The first type based on amorphous silicon diodes exhibits high spatial resolution due to the short lateral carrier collection. Combination of an amorphous silicon thick diode with microstrip detector geometries permits to achieve micromete...

  4. Characterization of Czochralski Silicon Detectors

    OpenAIRE

    Luukka, Panja-Riina; Haerkoenen, Jaakko

    2012-01-01

    This thesis describes the characterization of irradiated and non-irradiated segmenteddetectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It isshown that the radiation hardness (RH) of the protons of these detectors is higher thanthat of devices made of traditional materials such as Float Zone (FZ) silicon or DiffusionOxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 x1017 cm-3). The MCZ devices therefore present an interesting alter...

  5. Silicon nanophotonics for scalable quantum coherent feedback networks

    Energy Technology Data Exchange (ETDEWEB)

    Sarovar, Mohan; Brif, Constantin [Sandia National Laboratories, Livermore, CA (United States); Soh, Daniel B.S. [Sandia National Laboratories, Livermore, CA (United States); Stanford University, Edward L. Ginzton Laboratory, Stanford, CA (United States); Cox, Jonathan; DeRose, Christopher T.; Camacho, Ryan; Davids, Paul [Sandia National Laboratories, Albuquerque, NM (United States)

    2016-12-15

    The emergence of coherent quantum feedback control (CQFC) as a new paradigm for precise manipulation of dynamics of complex quantum systems has led to the development of efficient theoretical modeling and simulation tools and opened avenues for new practical implementations. This work explores the applicability of the integrated silicon photonics platform for implementing scalable CQFC networks. If proven successful, on-chip implementations of these networks would provide scalable and efficient nanophotonic components for autonomous quantum information processing devices and ultra-low-power optical processing systems at telecommunications wavelengths. We analyze the strengths of the silicon photonics platform for CQFC applications and identify the key challenges to both the theoretical formalism and experimental implementations. In particular, we determine specific extensions to the theoretical CQFC framework (which was originally developed with bulk-optics implementations in mind), required to make it fully applicable to modeling of linear and nonlinear integrated optics networks. We also report the results of a preliminary experiment that studied the performance of an in situ controllable silicon nanophotonic network of two coupled cavities and analyze the properties of this device using the CQFC formalism. (orig.)

  6. Silicon nanophotonics for scalable quantum coherent feedback networks

    International Nuclear Information System (INIS)

    Sarovar, Mohan; Brif, Constantin; Soh, Daniel B.S.; Cox, Jonathan; DeRose, Christopher T.; Camacho, Ryan; Davids, Paul

    2016-01-01

    The emergence of coherent quantum feedback control (CQFC) as a new paradigm for precise manipulation of dynamics of complex quantum systems has led to the development of efficient theoretical modeling and simulation tools and opened avenues for new practical implementations. This work explores the applicability of the integrated silicon photonics platform for implementing scalable CQFC networks. If proven successful, on-chip implementations of these networks would provide scalable and efficient nanophotonic components for autonomous quantum information processing devices and ultra-low-power optical processing systems at telecommunications wavelengths. We analyze the strengths of the silicon photonics platform for CQFC applications and identify the key challenges to both the theoretical formalism and experimental implementations. In particular, we determine specific extensions to the theoretical CQFC framework (which was originally developed with bulk-optics implementations in mind), required to make it fully applicable to modeling of linear and nonlinear integrated optics networks. We also report the results of a preliminary experiment that studied the performance of an in situ controllable silicon nanophotonic network of two coupled cavities and analyze the properties of this device using the CQFC formalism. (orig.)

  7. Giant piezoresistance of p-type nano-thick silicon induced by interface electron trapping instead of 2D quantum confinement

    International Nuclear Information System (INIS)

    Yang Yongliang; Li Xinxin

    2011-01-01

    The p-type silicon giant piezoresistive coefficient is measured in top-down fabricated nano-thickness single-crystalline-silicon strain-gauge resistors with a macro-cantilever bending experiment. For relatively thicker samples, the variation of piezoresistive coefficient in terms of silicon thickness obeys the reported 2D quantum confinement effect. For ultra-thin samples, however, the variation deviates from the quantum-effect prediction but increases the value by at least one order of magnitude (compared to the conventional piezoresistance of bulk silicon) and the value can change its sign (e.g. from positive to negative). A stress-enhanced Si/SiO 2 interface electron-trapping effect model is proposed to explain the 'abnormal' giant piezoresistance that should be originated from the carrier-concentration change effect instead of the conventional equivalent mobility change effect for bulk silicon piezoresistors. An interface state modification experiment gives preliminary proof of our analysis.

  8. Laboratory course on silicon sensors

    CERN Document Server

    Crescio, E; Roe, S; Rudge, A

    2003-01-01

    The laboratory course consisted of four different mini sessions, in order to give the student some hands-on experience on various aspects of silicon sensors and related integrated electronics. The four experiments were. 1. Characterisation of silicon diodes for particle detection 2. Study of noise performance of the Viking readout circuit 3. Study of the position resolution of a silicon microstrip sensor 4. Study of charge transport in silicon with a fast amplifier The data in the following were obtained during the ICFA school by the students.

  9. Silicon processing for photovoltaics II

    CERN Document Server

    Khattak, CP

    2012-01-01

    The processing of semiconductor silicon for manufacturing low cost photovoltaic products has been a field of increasing activity over the past decade and a number of papers have been published in the technical literature. This volume presents comprehensive, in-depth reviews on some of the key technologies developed for processing silicon for photovoltaic applications. It is complementary to Volume 5 in this series and together they provide the only collection of reviews in silicon photovoltaics available.The volume contains papers on: the effect of introducing grain boundaries in silicon; the

  10. Nanodiamonds carrying silicon-vacancy quantum emitters with almost lifetime-limited linewidths

    Science.gov (United States)

    Jantzen, Uwe; Kurz, Andrea B.; Rudnicki, Daniel S.; Schäfermeier, Clemens; Jahnke, Kay D.; Andersen, Ulrik L.; Davydov, Valery A.; Agafonov, Viatcheslav N.; Kubanek, Alexander; Rogers, Lachlan J.; Jelezko, Fedor

    2016-07-01

    Colour centres in nanodiamonds are an important resource for applications in quantum sensing, biological imaging, and quantum optics. Here we report unprecedented narrow optical transitions for individual colour centres in nanodiamonds smaller than 200 nm. This demonstration has been achieved using the negatively charged silicon vacancy centre, which has recently received considerable attention due to its superb optical properties in bulk diamond. We have measured an ensemble of silicon-vacancy centres across numerous nanodiamonds to have an inhomogeneous distribution of 1.05 nm at 5 K. Individual spectral lines as narrower than 360 MHz were measured in photoluminescence excitation, and correcting for apparent spectral diffusion yielded an homogeneous linewidth of about 200 MHz which is close to the lifetime limit. These results indicate the high crystalline quality achieved in these nanodiamond samples, and advance the applicability of nanodiamond-hosted colour centres for quantum optics applications.

  11. Nanodiamonds carrying silicon-vacancy quantum emitters with almost lifetime-limited linewidths

    International Nuclear Information System (INIS)

    Jantzen, Uwe; Kurz, Andrea B; Jahnke, Kay D; Kubanek, Alexander; Rogers, Lachlan J; Jelezko, Fedor; Rudnicki, Daniel S; Schäfermeier, Clemens; Andersen, Ulrik L; Davydov, Valery A; Agafonov, Viatcheslav N

    2016-01-01

    Colour centres in nanodiamonds are an important resource for applications in quantum sensing, biological imaging, and quantum optics. Here we report unprecedented narrow optical transitions for individual colour centres in nanodiamonds smaller than 200 nm. This demonstration has been achieved using the negatively charged silicon vacancy centre, which has recently received considerable attention due to its superb optical properties in bulk diamond. We have measured an ensemble of silicon-vacancy centres across numerous nanodiamonds to have an inhomogeneous distribution of 1.05 nm at 5 K. Individual spectral lines as narrower than 360 MHz were measured in photoluminescence excitation, and correcting for apparent spectral diffusion yielded an homogeneous linewidth of about 200 MHz which is close to the lifetime limit. These results indicate the high crystalline quality achieved in these nanodiamond samples, and advance the applicability of nanodiamond-hosted colour centres for quantum optics applications. (paper)

  12. Narrow power deposition profiles on the JET divertor target

    International Nuclear Information System (INIS)

    Lingertat, J.; Laux, M.; Monk, R.

    2001-01-01

    One of the key unresolved issues in the design of a future fusion reactor is the power handling capability of the divertor target plates. Earlier we reported on the existence of narrow power deposition profiles in JET, obtained mainly from Langmuir probe measurements. We repeated these measurements in the MkI, MkII and MkIIGB divertor configurations with an upgraded probe system, which allowed us to study the profile shape in more detail. The main results of this study are: In NB heated discharges the electron temperature and power flux at the outer target show a distinct peak of ∼5 mm half-width near the separatrix strike point. The corresponding profiles on the inner target do not show a similar feature. The height of the narrow peak increases with NB heating power and decreases with deuterium and impurity gas puffing. Ion orbit losses are suggested as a possible explanation of the observed profile shape

  13. Experimental research on flow instability in vertical narrow annuli

    Institute of Scientific and Technical Information of China (English)

    WU Geping; QIU Suizheng; SU Guanghui; JIA Dounan

    2007-01-01

    A narrow annular test section of 1.5mm gap and 1800mm length was designed and manufactured, with good tightness and insulation. Experiments were carried out to investigate characteristics of flow instability of forced-convection in vertical narrow annuli. Using distilled water as work fluid, the experiments were conducted at pressures of 1.0~3.0 MPa, mass flow rates of 3.0~25 kg/h, heating power of 3.0~ 6.5kW and inlet fluid temperature of 20 ℃, 40 ℃ or 60℃. It was found that flow instability occured with fixed inlet condition and heating power when mass flow rate was below a special value. Effects of inlet subcooling, system pressure and mass flow rate on the system behavior were studied and the instability region was given.

  14. Coulomb and nuclear excitations of narrow resonances in 17Ne

    Directory of Open Access Journals (Sweden)

    J. Marganiec

    2016-08-01

    Full Text Available New experimental data for dissociation of relativistic 17Ne projectiles incident on targets of lead, carbon, and polyethylene targets at GSI are presented. Special attention is paid to the excitation and decay of narrow resonant states in 17Ne. Distributions of internal energy in the O15+p+p three-body system have been determined together with angular and partial-energy correlations between the decay products in different energy regions. The analysis was done using existing experimental data on 17Ne and its mirror nucleus 17N. The isobaric multiplet mass equation is used for assignment of observed resonances and their spins and parities. A combination of data from the heavy and light targets yielded cross sections and transition probabilities for the Coulomb excitations of the narrow resonant states. The resulting transition probabilities provide information relevant for a better understanding of the 17Ne structure.

  15. Period effects, cohort effects, and the narrowing gender wage gap.

    Science.gov (United States)

    Campbell, Colin; Pearlman, Jessica

    2013-11-01

    Despite the abundance of sociological research on the gender wage gap, questions remain. In particular, the role of cohorts is under investigated. Using data from the Current Population Survey, we use age-period-cohort analysis to uniquely estimate age, period, and cohort effects on the gender wage gap. The narrowing of the gender wage gap that occurred between 1975 and 2009 is largely due to cohort effects. Since the mid-1990s, the gender wage gap has continued to close absent of period effects. While gains in female wages contributed to declines in the gender wage gap for cohorts born before 1950, for later cohorts the narrowing of the gender wage gap is primarily a result of declines in male wages. Copyright © 2013 Elsevier Inc. All rights reserved.

  16. Experimental Study on CHF in a Hemispherical Narrow Gap

    International Nuclear Information System (INIS)

    Jeong, J.H.; Park, R.J.; Kang, K.H.; Kim, S.B.; Kim, H.D.

    1999-01-01

    As a part of the SONATA-IV program, KAERI is conducting an experimental investigation of critical heat flux(CHF) in hemispherical narrow gaps. A visualization experiment, VISU-II, was done as the first step to get a visual observation of the flow behaviour inside a hemispherical gap and to understand the CHF-triggering mechanism. It was observed that the counter-current flow limitation (CCFL) phenomenon prevented water from wetting the heater surface and induced CHF. The CHFG (Critical Heat Flux in Gap) test is now being performed to measure the CHF and to investigate the inherent cooling mechanism in hemispherical narrow gaps. Temperature measurements over the heater surface show that the two-phase flow behaviour inside the gaps could be quite different from the other usual CHF experiments. The measured CHF points are lower than the predictions by existing empirical correlations based on the data measured with small-scale horizontal plates and vertical annulus. (authors)

  17. Period Effects, Cohort Effects, and the Narrowing Gender Wage Gap

    Science.gov (United States)

    Campbell, Colin; Pearlman, Jessica

    2015-01-01

    Despite the abundance of sociological research on the gender wage gap, questions remain. In particular, the role of cohorts is under investigated. Using data from the Current Population Survey, we use Age-Period-Cohort analysis to uniquely estimate age, period, and cohort effects on the gender wage gap. The narrowing of the gender wage gap that occurred between 1975 and 2009 is largely due to cohort effects. Since the mid-1990s, the gender wage gap has continued to close absent of period effects. While gains in female wages contributed to declines in the gender wage gap for cohorts born before 1950, for later cohorts the narrowing of the gender wage gap is primarily a result of declines in male wages. PMID:24090861

  18. New technology for the control of narrow-gap semiconductors

    International Nuclear Information System (INIS)

    Antoniou, I.; Bozhevolnov, V.; Melnikov, Yu.; Yafyasov, A.

    2003-01-01

    We present the results of the year work in the frame of the EU ESPRIT Project 28890 NTCONGS 'New technology for the control of narrow-gap semiconductors'. This work has involved both theoretical and experimental study, as well as the development of new specific equipment, towards the creation of a new generation of nanoelectronic devices able to operate at 77 K and even at room temperature

  19. US images encoding envelope amplitude following narrow band filtering

    International Nuclear Information System (INIS)

    Sommer, F.G.; Stern, R.A.; Chen, H.S.

    1986-01-01

    Ultrasonic waveform data from phantoms having differing scattering characteristics and from normal and cirrhotic human liver in vivo were recorded within a standardized dynamic range and filtered with narrow band filters either above or below the mean recorded ultrasonic center frequency. Images created by mapping the amplitudes of received ultrasound following such filtration permitted dramatic differentiation, not discernible in conventional US images, of phantoms having differing scattering characteristics, and of normal and cirrhotic human livers

  20. Elongational viscosity of narrow molar mass distribution polystyrene

    DEFF Research Database (Denmark)

    Bach, Anders; Almdal, Kristoffer; Rasmussen, Henrik Koblitz

    2003-01-01

    Transient and steady elongational viscosity has been measured for two narrow molar mass distribution polystyrene melts of molar masses 200 000 and 390 000 by means of a filament stretching rheometer. Total Hencky strains of about five have been obtained. The transient elongational viscosity rises...... above the linear viscoelastic prediction at intermediate strains, indicating strain hardening. The steady elongational viscosities are monotone decreasing functions of elongation rate. At elongation rates larger than the inverse reptation time, the steady elongational viscosity scales linearly...