WorldWideScience

Sample records for ulsi memory application

  1. Application of Cat-CVD for ULSI technology

    International Nuclear Information System (INIS)

    Akasaka, Yoichi

    2008-01-01

    The ULSI technology has been following Moore's law into the sub-100 nm era, although several challenging technical issues must be resolved. This paper describes possible application of Cat-CVD for ULSI technology beyond the 45 nm node. Especially, Cat-CVD SiN film for a transistor gate sidewall and/or a pre-metallic liner layer, and removal of photo resist (ash) by Cat-induced hydrogen atoms in the interconnect structure with an extreme low-k material are mainly discussed

  2. X-ray metrology for ULSI structures

    International Nuclear Information System (INIS)

    Bowen, D. K.; Matney, K. M.; Wormington, M.

    1998-01-01

    Non-destructive X-ray metrological methods are discussed for application to both process development and process control of ULSI structures. X-ray methods can (a) detect the unacceptable levels of internal defects generated by RTA processes in large wafers, (b) accurately measure the thickness and roughness of layers between 1 and 1000 nm thick and (c) can monitor parameters such as crystallographic texture and the roughness of buried interfaces. In this paper we review transmission X-ray topography, thin film texture measurement, grazing-incidence X-ray reflectivity and high-resolution X-ray diffraction. We discuss in particular their suitability as on-line sensors for process control

  3. Simulation of ion implantation for ULSI technology

    International Nuclear Information System (INIS)

    Hoessinger, A.

    2000-07-01

    In modern semiconductor technology ion implantation has turned out to be the most important technique to introduce dopant atoms into semiconducting materials. The major advantage of the ion implantation technique is the high controllability and reproducibility of the process parameters influencing the doping distributions. Furthermore, very shallow doping profiles can be formed, which are a prerequisite for ULSI (ultra large scale integration) technology. Since it is mainly ion implantation which determines the distribution of the dopants and thereby the electrical properties of the semiconductor devices highly accurate simulation methods for ion implantation processes are required to be able to predict and optimize the behavior of integrated circuits. In recent years successively shrinking device dimensions and new design concepts have shown the necessity of a full three-dimensional treatment of simulation problems, e.g. the simulation of MOS transistors with narrow gates, or vertical transistors. Three-dimensional simulations obviously require large computation times and a lot of memory. Therefore, it is a waste of computational resources if a three-dimensional simulation would be applied to all applications. Several problems, like the buried layer or the well formation of an MOS transistor can be analyzed as accurate by simpler two-dimensional or even one-dimensional simulations. Since it should be easy to switch the dimension of the simulation without recalibrating a simulator, it is not desirable to use different simulators, which eventually use different models, for the simulation of one-dimensional, two-dimensional and three-dimensional problems. The goal of this work was to further improve a Monte-Carlo ion implantation simulator developed over the last fifteen years within the scope of several PhD theses. As part of this work several new models and methods have been developed and implemented to improve the accuracy and the efficiency of the simulator, in

  4. Metrology aspects of SIMS depth profiling for advanced ULSI processes

    International Nuclear Information System (INIS)

    Budrevich, Andre; Hunter, Jerry

    1998-01-01

    As the semiconductor industry roadmap passes through the 0.1 μm technology node, the junction depth of the transistor source/drain extension will be required to be less than 20 nm and the well doping will be near 1.0 μm in depth. The development of advanced ULSI processing techniques requires the evolution of new metrology tools to ensure process capability. High sensitivity (ppb) coupled with excellent depth resolution (1 nm) makes SIMS the technique of choice for measuring the in-depth chemical distribution of these dopants with high precision and accuracy. This paper will discuss the issues, which impact the accuracy and precision of SIMS measurements of ion implants (both shallow and deep). First this paper will discuss common uses of the SIMS technique in the technology development and manufacturing of advanced ULSI processes. In the second part of this paper the ability of SIMS to make high precision measurements of ion implant depth profiles will be studied

  5. Characterization and Metrology for ULSI Technology: 1998 International Conference. Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    Seiler, D.G. [NIST, Gaithersburg, MD 20899 (United States); Diebold, A.C. [SEMATECH, Austin, TX 78741 (United States); Bullis, W.M. [SEMI, Mountain View, CA 94043 (United States); Schaffner, T.J. [Texas Instruments, Dallas, TX 75221 (United States); McDonald, R. [Intel Corp., Santa Clara, CA 95050 (United States); Walters, E.J. [NIST, Gaithersburg, MD 20899 (United States)

    1998-11-01

    These proceedings represent papers presented at the 1998 International Conference on Characterization and Metrology for ULSI Technology (INIST) in March 1998. The Conference reviewed important semiconductor techniques that are crucial to continued advancements in the semiconductor industry. It brought together leaders, scientists, and engineers concerned with all aspects of the technology and characterization techniques for silicon research. The topics covered included front end processes consisting of modeling, materials, gate dielectrics, doping and wafer issues. Interconnects were discussed in detail including deposition technology. Lithography and patterning was also discussed. Finally, packaging/assembly of the integrated circuits and materials characterization including dopant profiling was discussed. The papers provide an effective portrayal of industry characterization needs and point out some of the problems that must be addressed by industry, academia, and government to continue the dramatic progress in semiconductor technology. There were 141 papers included in these proceedings, out of which 9 have been abstracted for the Energy,Science and Technology database.(AIP)

  6. Terrestrial radiation effects in ULSI devices and electronic systems

    CERN Document Server

    Ibe, Eishi H

    2014-01-01

    A practical guide on how mathematical approaches can be used to analyze and control radiation effects in semiconductor devices within various environments Covers faults in ULSI devices to failures in electronic systems caused by a wide variety of radiation fields, including electrons, alpha -rays, muons, gamma rays, neutrons and heavy ions. Readers will learn the environmental radiation features at the ground or avionics altitude. Readers will also learn how to make numerical models from physical insight and what kind of mathematical approaches should be implemented to analyze the radiation effects. A wide variety of mitigation techniques against soft-errors are reviewed and discussed. The author shows how to model sophisticated radiation effects in condensed matter in order to quantify and control them. The book provides the reader with the knowledge on a wide variety of radiation fields and their effects on the electronic devices and systems. It explains how electronic systems including servers and rout...

  7. Applications for Packetized Memory Interfaces

    OpenAIRE

    Watson, Myles Glen

    2015-01-01

    The performance of the memory subsystem has a large impact on the performance of modern computer systems. Many important applications are memory bound and others are expected to become memory bound in the future. The importance of memory performance makes it imperative to understand and optimize the interactions between applications and the system architecture. Prototyping and exploring various configurations of memory systems can give important insights, but current memory interfaces are lim...

  8. One- and two-dimensional dopant/carrier profiling for ULSI

    Science.gov (United States)

    Vandervorst, W.; Clarysse, T.; De Wolf, P.; Trenkler, T.; Hantschel, T.; Stephenson, R.; Janssens, T.

    1998-11-01

    Dopant/carrier profiles constitute the basis of the operation of a semiconductor device and thus play a decisive role in the performance of a transistor and are subjected to the same scaling laws as the other constituents of a modern semiconductor device and continuously evolve towards shallower and more complex configurations. This evolution has increased the demands on the profiling techniques in particular in terms of resolution and quantification such that a constant reevaluation and improvement of the tools is required. As no single technique provides all the necessary information (dopant distribution, electrical activation,..) with the requested spatial and depth resolution, the present paper attempts to provide an assessment of those tools which can be considered as the main metrology technologies for ULSI-applications. For 1D-dopant profiling secondary ion mass spectrometry (SIMS) has progressed towards a generally accepted tool meeting the requirements. For 1D-carrier profiling spreading resistance profiling and microwave surface impedance profiling are envisaged as the best choices but extra developments are required to promote them to routinely applicable methods. As no main metrology tool exist for 2D-dopant profiling, main emphasis is on 2D-carrier profiling tools based on scanning probe microscopy. Scanning spreading resistance (SSRM) and scanning capacitance microscopy (SCM) are the preferred methods although neither of them already meets all the requirements. Complementary information can be extracted from Nanopotentiometry which samples the device operation in more detail. Concurrent use of carrier profiling tools, Nanopotentiometry, analysis of device characteristics and simulations is required to provide a complete characterization of deep submicron devices.

  9. Ferrite materials for memory applications

    CERN Document Server

    Saravanan, R

    2017-01-01

    The book discusses the synthesis and characterization of various ferrite materials used for memory applications. The distinct feature of the book is the construction of charge density of ferrites by deploying the maximum entropy method (MEM). This charge density gives the distribution of charges in the ferrite unit cell, which is analyzed for charge related properties.

  10. Emerging memory technologies design, architecture, and applications

    CERN Document Server

    2014-01-01

    This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits. • Provides a comprehensive reference on designing modern circuits with emerging, non-volatile memory technologies, such as MRAM and PCRAM; • Explores new design opportunities offered by emerging memory technologies, from a holistic perspective; • Describes topics in technology, modeling, architecture and applications; • Enables circuit designers to ex...

  11. Quantum memories: emerging applications and recent advances

    Science.gov (United States)

    Heshami, Khabat; England, Duncan G.; Humphreys, Peter C.; Bustard, Philip J.; Acosta, Victor M.; Nunn, Joshua; Sussman, Benjamin J.

    2016-01-01

    Quantum light–matter interfaces are at the heart of photonic quantum technologies. Quantum memories for photons, where non-classical states of photons are mapped onto stationary matter states and preserved for subsequent retrieval, are technical realizations enabled by exquisite control over interactions between light and matter. The ability of quantum memories to synchronize probabilistic events makes them a key component in quantum repeaters and quantum computation based on linear optics. This critical feature has motivated many groups to dedicate theoretical and experimental research to develop quantum memory devices. In recent years, exciting new applications, and more advanced developments of quantum memories, have proliferated. In this review, we outline some of the emerging applications of quantum memories in optical signal processing, quantum computation and non-linear optics. We review recent experimental and theoretical developments, and their impacts on more advanced photonic quantum technologies based on quantum memories. PMID:27695198

  12. Novel applications of non-volatile memories

    Energy Technology Data Exchange (ETDEWEB)

    Duthie, I

    1982-01-01

    The author reviews briefly the evolution of the programmable memory and the alternative technologies, before discussing the operation of a small EEPROM when used in conjunction with a microprocessor for typical applications. Some applications are reviewed and the opportunities which eeproms can offer for new applications are presented, together with the requirements for artificial intelligence to become a reality.

  13. Impulse: Memory System Support for Scientific Applications

    Directory of Open Access Journals (Sweden)

    John B. Carter

    1999-01-01

    Full Text Available Impulse is a new memory system architecture that adds two important features to a traditional memory controller. First, Impulse supports application‐specific optimizations through configurable physical address remapping. By remapping physical addresses, applications control how their data is accessed and cached, improving their cache and bus utilization. Second, Impulse supports prefetching at the memory controller, which can hide much of the latency of DRAM accesses. Because it requires no modification to processor, cache, or bus designs, Impulse can be adopted in conventional systems. In this paper we describe the design of the Impulse architecture, and show how an Impulse memory system can improve the performance of memory‐bound scientific applications. For instance, Impulse decreases the running time of the NAS conjugate gradient benchmark by 67%. We expect that Impulse will also benefit regularly strided, memory‐bound applications of commercial importance, such as database and multimedia programs.

  14. Nonvolatile Memory Technology for Space Applications

    Science.gov (United States)

    Oldham, Timothy R.; Irom, Farokh; Friendlich, Mark; Nguyen, Duc; Kim, Hak; Berg, Melanie; LaBel, Kenneth A.

    2010-01-01

    This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

  15. Applications of shape memory alloys in Japan

    International Nuclear Information System (INIS)

    Asai, M.; Suzuki, Y.

    2000-01-01

    In Japan, a first application of shape memory TiNi alloy was a moving flap in an air-conditioner which was developed as sensing function of shape memory alloy at Matsushista Electric Industrial Co. Then, shape memory utilized in a coffee maker, an electric rice-cooker, a thermal mixing valve and etc. were commercialized in Japan. And brassiere wires, a guide wire for medical treatment, an antenna for portable telephone and others were commercialized utilizing superelasticity. At the same time with these commercial products, there was not only progress in fabrication technology to effect accurate transformation temperature, but also the discovery of small hysteresis alloy such as R-phase or TiNiCu alloy and low transformation temperature alloy such as TiNiFe, TiNiV and TiNiCo alloys. Therefore the shape memory alloy market has expanded widely to electric appliances, automobile, residence, medical care and other field today. (orig.)

  16. Improving Transactional Memory Performance for Irregular Applications

    OpenAIRE

    Pedrero, Manuel; Gutiérrez, Eladio; Romero, Sergio; Plata, Óscar

    2015-01-01

    Transactional memory (TM) offers optimistic concurrency support in modern multicore archi- tectures, helping the programmers to extract parallelism in irregular applications when data dependence information is not available before runtime. In fact, recent research focus on ex- ploiting thread-level parallelism using TM approaches. However, the proposed techniques are of general use, valid for any type of application. This work presents ReduxSTM, a software TM system specially d...

  17. Memory Applications Using Resonant Tunneling Diodes

    Science.gov (United States)

    Shieh, Ming-Huei

    Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

  18. Multistate Resistive Switching Memory for Synaptic Memory Applications

    KAUST Repository

    Hota, Mrinal Kanti; Hedhili, Mohamed N.; Wehbe, Nimer; McLachlan, Martyn A.; Alshareef, Husam N.

    2016-01-01

    memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies

  19. Processing/structure/property Relationships of Barium Strontium Titanate Thin Films for Dynamic Random Access Memory Application.

    Science.gov (United States)

    Peng, Cheng-Jien

    The purpose of this study is to see the application feasibility of barium strontium titanate (BST) thin films on ultra large scale integration (ULSI) dynamic random access memory (DRAM) capacitors through the understanding of the relationships among processing, structure and electrical properties. Thin films of BST were deposited by multi-ion -beam reactive sputtering (MIBERS) technique and metallo -organic decomposition (MOD) method. The processing parameters such as Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness and doping concentration were correlated with the structure and electric properties of the films. Some effects of secondary low-energy oxygen ion bombardment were also examined. Microstructures of BST thin films could be classified into two types: (a) Type I structures, with multi-grains through the film thickness, for amorphous as-grown films after high temperature annealing, and (b) columnar structure (Type II) which remained even after high temperature annealing, for well-crystallized films deposited at high substrate temperatures. Type I films showed Curie-von Schweidler response, while Type II films showed Debted type behavior. Type I behavior may be attributed to the presence of a high density of disordered grain boundaries. Two types of current -voltage characteristics could be seen in non-bombarded films depending on the chemistry of the films (doped or undoped) and substrate temperature during deposition. Only the MIBERS films doped with high donor concentration and deposited at high substrate temperature showed space-charge -limited conduction (SCLC) with discrete shallow traps embedded in trap-distributed background at high electric field. All other non-bombarded films, including MOD films, showed trap-distributed SCLC behavior with a slope of {~}7.5-10 due to the presence of grain boundaries through film thickness or traps induced by unavoidable acceptor impurities in the films. Donor-doping could

  20. Multistate Resistive Switching Memory for Synaptic Memory Applications

    KAUST Repository

    Hota, Mrinal Kanti

    2016-07-12

    Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  1. Optimizing memory use in Java applications, garbage collectors

    Directory of Open Access Journals (Sweden)

    Ştefan PREDA

    2016-05-01

    Full Text Available Java applications are diverse, depending by use case, exist application that use small amount of memory till application that use huge amount, tens or hundreds of gigabits. Java Virtual Machine is designed to automatically manage memory for applications. Even in this case due diversity of hardware, software that coexist on the same system and applications itself, these automatic decision need to be accompanied by developer or system administrator to triage optimal memory use. After developer big role to write optimum code from memory allocation perspective , optimizing memory use at Java Virtual Machine and application level become in last year's one of the most important task. This is explained in special due increased demand in applications scalability.

  2. Thin film shape memory alloys for optical sensing applications

    International Nuclear Information System (INIS)

    Fu, Y Q; Luo, J K; Huang, W M; Flewitt, A J; Milne, W I

    2007-01-01

    Based on shape memory effect of the sputtered thin film shape memory alloys, different types of micromirror structures were designed and fabricated for optical sensing application. Using surface micromachining, TiNi membrane mirror structure has been fabricated, which can be actuated based on intrinsic two-way shape memory effect of the free-standing TiNi film. Using bulk micromachining, TiNi/Si and TiNi/Si 3 N 4 microcantilever mirror structures were fabricated

  3. Shape memory effect and super elasticity. Its dental applications.

    Science.gov (United States)

    Kotian, R

    2001-01-01

    The shape memory alloys are quite fascinating materials characterized by a shape memory effect and super elasticity which ordinary metals do not have. This unique behaviour was first found in a Au-47.5 at % Cd alloy in 1951, and was published in 1963 by the discovery of Ti-Ni alloy. Shape memory alloys now being practically used as new functional alloys for various dental and medical applications.

  4. Prioritizing Test Cases for Memory Leaks in Android Applications

    Institute of Scientific and Technical Information of China (English)

    Ju Qian; Di Zhou

    2016-01-01

    Mobile applications usually can only access limited amount of memory. Improper use of the memory can cause memory leaks, which may lead to performance slowdowns or even cause applications to be unexpectedly killed. Although a large body of research has been devoted into the memory leak diagnosing techniques after leaks have been discovered, it is still challenging to find out the memory leak phenomena at first. Testing is the most widely used technique for failure discovery. However, traditional testing techniques are not directed for the discovery of memory leaks. They may spend lots of time on testing unlikely leaking executions and therefore can be inefficient. To address the problem, we propose a novel approach to prioritize test cases according to their likelihood to cause memory leaks in a given test suite. It firstly builds a prediction model to determine whether each test can potentially lead to memory leaks based on machine learning on selected code features. Then, for each input test case, we partly run it to get its code features and predict its likelihood to cause leaks. The most suspicious test cases will be suggested to run at first in order to reveal memory leak faults as soon as possible. Experimental evaluation on several Android applications shows that our approach is effective.

  5. Application of reflective memory network in Tokamak fast controller

    International Nuclear Information System (INIS)

    Weng Chuqiao; Zhang Ming; Liu Rui; Zheng Wei; Zhuang Ge

    2014-01-01

    A specific application of reflective memory network in Tokamak fast controller was introduced in this paper. The PMC-5565 reflective memory card and ACC-5565 network hub were used to build a reflective memory real-time network to test its real- time function. The real-time, rapidity and determinacy of the time delay for fast controller controlling power device under the reflective memory network were tested in the LabVIEW RT real-time operation system. Depending on the reflective memory technology, the data in several fast controllers were synchronized, and multiple control tasks using a single control task were finished. The experiment results show that the reflective memory network can meet the real-time requirements for fast controller to perform the feedback control over devices. (authors)

  6. The industrial applications of shape memory alloys in North America

    International Nuclear Information System (INIS)

    Mc Schetky D, L.

    2000-01-01

    Literature in the recent past on shape memory effect alloys dwelt principally on the physical metallurgy, crystallography and kinetics of the shape memory phenomenon. By contrast, we now have books and conference proceedings devoted to the engineering aspects of SMAs, their technology and application. The dominant role SMAs now play in the field of medical and orthodontic devices is well documented and will be reviewed by others in this conference. In this paper we will discuss the commercial applications for shape memory alloy devices in the North American market; applications which are in many cases also produced in European countries and Japan. The early success of shape memory alloy couplings for joining tubing and pipe in the late 1960's was not followed by other large volume applications until the advent of shape memory eyeglass frames, brassiere underwires and cellular phone antennas. Many other applications have now evolved into mature markets and these will be reviewed. In addition to the many commercial applications cited, there are a number of other fields in which shape memory alloys are destined to play a major role; these include smart materials and adaptive structures, MEMS devices, infrastructure systems and electrical power generation and distribution. These applications are being developed with private and government funding and will also be briefly discussed. (orig.)

  7. The industrial applications of shape memory alloys in North America

    Energy Technology Data Exchange (ETDEWEB)

    Mc Schetky D, L. [Memry Corp., Brookfield, CT (United States)

    2000-07-01

    Literature in the recent past on shape memory effect alloys dwelt principally on the physical metallurgy, crystallography and kinetics of the shape memory phenomenon. By contrast, we now have books and conference proceedings devoted to the engineering aspects of SMAs, their technology and application. The dominant role SMAs now play in the field of medical and orthodontic devices is well documented and will be reviewed by others in this conference. In this paper we will discuss the commercial applications for shape memory alloy devices in the North American market; applications which are in many cases also produced in European countries and Japan. The early success of shape memory alloy couplings for joining tubing and pipe in the late 1960's was not followed by other large volume applications until the advent of shape memory eyeglass frames, brassiere underwires and cellular phone antennas. Many other applications have now evolved into mature markets and these will be reviewed. In addition to the many commercial applications cited, there are a number of other fields in which shape memory alloys are destined to play a major role; these include smart materials and adaptive structures, MEMS devices, infrastructure systems and electrical power generation and distribution. These applications are being developed with private and government funding and will also be briefly discussed. (orig.)

  8. Application of phase-change materials in memory taxonomy.

    Science.gov (United States)

    Wang, Lei; Tu, Liang; Wen, Jing

    2017-01-01

    Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other types of memory devices are rarely reported. Here we review the physical principles of phase-change materials and devices aiming to help researchers understand the concept of phase-change memory. We classify phase-change memory devices into phase-change optical disc, phase-change scanning probe memory, phase-change random access memory, and phase-change nanophotonic device, according to their locations in memory hierarchy. For each device type we discuss the physical principles in conjunction with merits and weakness for data storage applications. We also outline state-of-the-art technologies and future prospects.

  9. Application of phase-change materials in memory taxonomy

    OpenAIRE

    Wang, Lei; Tu, Liang; Wen, Jing

    2017-01-01

    Abstract Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other...

  10. Memory skills of deaf learners: implications and applications.

    Science.gov (United States)

    Hamilton, Harley

    2011-01-01

    The author reviews research on working memory and short-term memory abilities of deaf individuals, delineating strengths and weaknesses. Among the areas of weakness that are reviewed are sequential recall, processing speed, attention, and memory load. Areas of strengths include free recall, visuospatial recall, imagery, and dual encoding. Phonological encoding and rehearsal appear to be strengths when these strategies are employed. The implications of the strengths and weaknesses for language learning and educational achievement are discussed. Research questions are posed, and remedial and compensatory classroom applications are suggested.

  11. Shape Memory Alloys (Part II: Classification, Production and Application

    Directory of Open Access Journals (Sweden)

    I. Ivanic

    2014-09-01

    Full Text Available Shape memory alloys (SMAs have been extensively investigated because of their unique shape memory behaviour, i.e. their ability to recover their original shape they had before deformation. Shape memory effect is related to the thermoelastic martensitic transformation. Austenite to martensite phase transformation can be obtained by mechanical (loading and thermal methods (heating and cooling. Depending on thermomechanical conditions, SMAs demonstrate several thermomechanical phenomena, such as pseudoelasticity, superelasticity, shape memory effect (one-way and two-way and rubber-like behaviour. Numerous alloys show shape memory effect (NiTi-based alloys, Cu-based alloys, Fe-based alloys etc.. Nitinol (NiTi is the most popular and the most commonly used SMA due to its superior thermomechanical and thermoelectrical properties. NiTi alloys have greater shape memory strain and excellent corrosion resistance compared to Cu – based alloys. However, they are very costly. On the other hand, copper-based alloys (CuZn and CuAl based alloys are much less expensive, easier to manufacture and have a wider range of potential transformation temperatures. The characteristic transformation temperatures of martensitic transformation of CuAlNi alloys can lie between −200 and 200 °C, and these temperatures depend on Al and Ni content. Among the Cu – based SMAs, the most frequently applied are CuZnAl and CuAlNi alloys. Although CuZnAl alloys with better mechanical properties are the most popular among the Cu-based SMAs, they lack sufficient thermal stability, while CuAlNi shape memory alloys, in spite of their better thermal stability, have found only limited applications due to insufficient formability owing to the brittle γ2 precipitates. The most important disadvantage of polycrystalline CuAlNi alloys is a small reversible deformation (one-way shape memory effect: up to 4 %; two-way shape memory effect: only approximately 1.5 % due to intergranular

  12. Shape memory alloys: metallurgy, biocompatibility, and biomechanics for neurosurgical applications.

    Science.gov (United States)

    Hoh, Daniel J; Hoh, Brian L; Amar, Arun P; Wang, Michael Y

    2009-05-01

    SHAPE MEMORY ALLOYS possess distinct dynamic properties with particular applications in neurosurgery. Because of their unique physical characteristics, these materials are finding increasing application where resiliency, conformation, and actuation are needed. Nitinol, the most frequently manufactured shape memory alloy, responds to thermal and mechanical stimuli with remarkable mechanical properties such as shape memory effect, super-elasticity, and high damping capacity. Nitinol has found particular use in the biomedical community because of its excellent fatigue resistance and biocompatibility, with special interest in neurosurgical applications. The properties of nitinol and its diffusionless phase transformations contribute to these unique mechanical capabilities. The features of nitinol, particularly its shape memory effect, super-elasticity, damping capacity, as well as its biocompatibility and biomechanics are discussed herein. Current and future applications of nitinol and other shape memory alloys in endovascular, spinal, and minimally invasive neurosurgery are introduced. An understanding of the metallurgic properties of nitinol provides a foundation for further exploration of its use in neurosurgical implant design.

  13. Application of Shape Memory Alloys in Seismic Isolation: A Review

    Directory of Open Access Journals (Sweden)

    Shaghayegh Alvandi

    2014-12-01

    Full Text Available In the last two decades, there has been an increasing interest in structural engineering control methods. Shape memory alloys and seismic isolation systems are examples of passive control systems that use of any one alone, effectively improve the seismic performance of the structure. Characteristics such as large strain range without any residual deformation, high damping capacity, excellent re-centering, high resistance to fatigue and corrosion and durability have made shape memory alloy an effective damping device or part of base isolators. A unique characteristic of shape memory alloys is in recovering residual deformations even after strong ground excitations. Seismic isolation is a device to lessen earthquake damage prospects. In the latest research studies, shape memory alloy is utilized in combination with seismic isolation system and their results indicate the effectiveness of the application of them to control the response of the structures. This paper reviews the findings of research studies on base isolation system implemented in the building and/or bridge structures by including the unique behavior of shape memory alloys. This study includes the primary information about the characteristic of the isolation system as well as the shape memory material. The efficiency and feasibility of the two mechanisms are also presented by few cases in point.

  14. Modeling Students' Memory for Application in Adaptive Educational Systems

    Science.gov (United States)

    Pelánek, Radek

    2015-01-01

    Human memory has been thoroughly studied and modeled in psychology, but mainly in laboratory setting under simplified conditions. For application in practical adaptive educational systems we need simple and robust models which can cope with aspects like varied prior knowledge or multiple-choice questions. We discuss and evaluate several models of…

  15. PROPERTY DATABASE FOR THE DEVELOPMENT OF SHAPE MEMORY ALLOY APPLICATIONS

    OpenAIRE

    Tang , W.; CederstrÖm , J.; SandstrÖm , R.

    1991-01-01

    Important points involving the selection of shape memory alloy (SMA) application projects are discussed. The development of a property database for SMA is initiated. Both conventional data as well as characteristics which are unique for SMA are stored. As an application example of the database SMA-SELECT, important properties for Ti-Ni alloys near equi-atomic composition, such as temperature window width for superelasticity (SE), stress rate, critical yield stress, and their interaction have ...

  16. Biomedical Applications of Thermally Activated Shape Memory Polymers

    Energy Technology Data Exchange (ETDEWEB)

    Small IV, W; Singhal, P; Wilson, T S; Maitland, D J

    2009-04-10

    Shape memory polymers (SMPs) are smart materials that can remember a primary shape and can return to this primary shape from a deformed secondary shape when given an appropriate stimulus. This property allows them to be delivered in a compact form via minimally invasive surgeries in humans, and deployed to achieve complex final shapes. Here we review the various biomedical applications of SMPs and the challenges they face with respect to actuation and biocompatibility. While shape memory behavior has been demonstrated with heat, light and chemical environment, here we focus our discussion on thermally stimulated SMPs.

  17. Application of shape memory alloys in bolted flanged connections

    International Nuclear Information System (INIS)

    Zhu Shichun; Lu Xiaofeng

    2009-01-01

    The Shape Memory Effect (SME) and super elasticity of the Shape Memory Alloys (SMA) can make up the clamping force decreasing caused by the creep and relaxation behavior in Bolted Flanged Connections (BFC), and improve the reliability of the BFC. Advances in the research of SMA in BFC home and abroad is summarized in this paper. The application prospects of Ti-Ni-Pd, Ti-Ni-Hf, Fe-Mn-Si, Cu-Al-Ni and Ni-Al-Mn in the BFC are also discussed. It is considered that the compressive characteristics of the parent phase of SMA should be studied further for the application of SMA to BFC besides the design of sealing structure. When more basic research data is accumulated, BFC with high sealing performance for the critical engineering applications can be developed based on the comprehensive consideration of the stability and reliability of the clamping force. (authors)

  18. Compact holographic memory and its application to optical pattern recognition

    Science.gov (United States)

    Chao, Tien-Hsin; Reyes, George F.; Zhou, Hanying

    2001-03-01

    JPL is developing a high-density, nonvolatile Compact Holographic Data Storage (CHDS) system to enable large- capacity, high-speed, low power consumption, and read/write of data for commercial and space applications. This CHDS system consists of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and high- speed. In this paper, recent technology progress in developing this CHDS at JPL will be presented. The recent applications of the CHDS to optical pattern recognition, as a high-density, high transfer rate memory bank will also be discussed.

  19. Memory

    Science.gov (United States)

    ... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

  20. Properties and medical applications of shape memory alloys.

    Science.gov (United States)

    Tarniţă, Daniela; Tarniţă, D N; Bîzdoacă, N; Mîndrilă, I; Vasilescu, Mirela

    2009-01-01

    One of the most known intelligent material is nitinol, which offers many functional advantages over conventional implantable alloys. Applications of SMA to the biomedical field have been successful because of their functional qualities, enhancing both the possibility and the execution of less invasive surgeries. The biocompatibility of these alloys is one of their most important features. Different applications exploit the shape memory effect (one-way or two-way) and the super elasticity, so that they can be employed in orthopedic and cardiovascular applications, as well as in the manufacture of new surgical tools. Therefore, one can say that smart materials, especially SMA, are becoming noticeable in the biomedical field. Super elastic NiTi has become a material of strategic importance as it allows to overcome a wide range of technical and design issues relating to the miniaturization of medical devices and the increasing trend for less invasive and therefore less traumatic procedures. This paper will consider just why the main properties of shape memory alloys hold so many opportunities for medical devices and will review a selection of current applications.

  1. [Ecological memory and its potential applications in ecology: a review].

    Science.gov (United States)

    Sun, Zhong-yu; Ren, Hai

    2011-03-01

    Ecological memory (EM) is defined as the capability of the past states or experiences of a community to influence the present or future ecological responses of the community. As a relatively new concept, EM has received considerable attention in the study of ecosystem structure and function, such as community succession, ecological restoration, biological invasion, and natural resource management. This review summarized the definition, components, and categories of EM, and discussed the possible mechanisms and affecting factors of EM. Also, the potential applications of EM were proposed, in order to further understand the mechanisms of community succession and to guide ecological restoration.

  2. Shape memory polymer cellular solid design for medical applications

    International Nuclear Information System (INIS)

    De Nardo, L; Bertoldi, S; Tanzi, M C; Farè, S; Haugen, H J

    2011-01-01

    Shape memory polymers (SMPs) are an emerging class of active materials whose response can be easily tailored via modifications of the molecular parameters and optimization of the transformation processes. In this work, we originally demonstrated that a correct coupling of polymer transformation processes (co-extrusion with chemical blowing agents, salt co-extrusion/particulate leaching, solvent casting/particulate leaching) and SMPs allows one to obtain porous structures with a broad spectrum of morphological properties resulting in tunable thermo-mechanical and shape recovery properties. Such a wide range of properties could fulfil the specifications of medical applications in which the use of SMP-based foams can be envisaged

  3. Biodegradable toughened nanohybrid shape memory polymer for smart biomedical applications.

    Science.gov (United States)

    Biswas, Arpan; Singh, Akhand Pratap; Rana, Dipak; Aswal, Vinod K; Maiti, Pralay

    2018-05-17

    A polyurethane nanohybrid has been prepared through the in situ polymerization of an aliphatic diisocyanate, ester polyol and a chain extender in the presence of two-dimensional platelets. Polymerization within the platelet galleries helps to intercalate, generate diverse nanostructure and improve the nano to macro scale self-assembly, which leads to a significant enhancement in the toughness and thermal stability of the nanohybrid in comparison to pure polyurethane. The extensive interactions, the reason for property enhancement, between nanoplatelets and polymer chains are revealed through spectroscopic measurements and thermal studies. The nanohybrid exhibits significant improvement in the shape memory phenomena (91% recovery) at the physiological temperature, which makes it suitable for many biomedical applications. The structural alteration, studied through temperature dependent small angle neutron scattering and X-ray diffraction, along with unique crystallization behavior have extensively revealed the special shape memory behavior of this nanohybrid and facilitated the understanding of the molecular flipping in the presence of nanoplatelets. Cell line studies and subsequent imaging testify that this nanohybrid is a superior biomaterial that is suitable for use in the biomedical arena. In vivo studies on albino rats exhibit the potential of the shape memory effect of the nanohybrid as a self-tightening suture in keyhole surgery by appropriately closing the lips of the wound through the recovery of the programmed shape at physiological temperature with faster healing of the wound and without the formation of any scar. Further, the improved biodegradable nature along with the rapid self-expanding ability of the nanohybrid at 37 °C make it appropriate for many biomedical applications including a self-expanding stent for occlusion recovery due to its tough and flexible nature.

  4. Memory Skills of Deaf Learners: Implications and Applications

    Science.gov (United States)

    Hamilton, Harley

    2011-01-01

    This paper will review research on working memory and short-term memory abilities of deaf individuals delineating strengths and weaknesses. The areas of memory reviewed include weaknesses such as sequential recall, processing speed, attention, and memory load. Strengths include free recall, visuospatial recall, imagery and dual encoding.…

  5. Application of source biasing technique for energy efficient DECODER circuit design: memory array application

    Science.gov (United States)

    Gupta, Neha; Parihar, Priyanka; Neema, Vaibhav

    2018-04-01

    Researchers have proposed many circuit techniques to reduce leakage power dissipation in memory cells. If we want to reduce the overall power in the memory system, we have to work on the input circuitry of memory architecture i.e. row and column decoder. In this research work, low leakage power with a high speed row and column decoder for memory array application is designed and four new techniques are proposed. In this work, the comparison of cluster DECODER, body bias DECODER, source bias DECODER, and source coupling DECODER are designed and analyzed for memory array application. Simulation is performed for the comparative analysis of different DECODER design parameters at 180 nm GPDK technology file using the CADENCE tool. Simulation results show that the proposed source bias DECODER circuit technique decreases the leakage current by 99.92% and static energy by 99.92% at a supply voltage of 1.2 V. The proposed circuit also improves dynamic power dissipation by 5.69%, dynamic PDP/EDP 65.03% and delay 57.25% at 1.2 V supply voltage.

  6. Applications of Shape Memory Alloys for Neurology and Neuromuscular Rehabilitation

    Directory of Open Access Journals (Sweden)

    Simone Pittaccio

    2015-05-01

    Full Text Available Shape memory alloys (SMAs are a very promising class of metallic materials that display interesting nonlinear properties, such as pseudoelasticity (PE, shape memory effect (SME and damping capacity, due to high mechanical hysteresis and internal friction. Our group has applied SMA in the field of neuromuscular rehabilitation, designing some new devices based on the mentioned SMA properties: in particular, a new type of orthosis for spastic limb repositioning, which allows residual voluntary movement of the impaired limb and has no predetermined final target position, but follows and supports muscular elongation in a dynamic and compliant way. Considering patients in the sub-acute phase after a neurological lesion, and possibly bedridden, the paper presents a mobiliser for the ankle joint, which is designed exploiting the SME to provide passive exercise to the paretic lower limb. Two different SMA-based applications in the field of neuroscience are then presented, a guide and a limb mobiliser specially designed to be compatible with diagnostic instrumentations that impose rigid constraints in terms of electromagnetic compatibility and noise distortion. Finally, the paper discusses possible uses of these materials in the treatment of movement disorders, such as dystonia or hyperkinesia, where their dynamic characteristics can be advantageous.

  7. Artificial intelligence applications of fast optical memory access

    Science.gov (United States)

    Henshaw, P. D.; Todtenkopf, A. B.

    The operating principles and performance of rapid laser beam-steering (LBS) techniques are reviewed and illustrated with diagrams; their applicability to fast optical-memory (disk) access is evaluated; and the implications of fast access for the design of expert systems are discussed. LBS methods examined include analog deflection (source motion, wavefront tilt, and phased arrays), digital deflection (polarization modulation, reflectivity modulation, interferometric switching, and waveguide deflection), and photorefractive LBS. The disk-access problem is considered, and typical LBS requirements are listed as 38,000 beam positions, rotational latency 25 ms, one-sector rotation time 1.5 ms, and intersector space 87 microsec. The value of rapid access for increasing the power of expert systems (by permitting better organization of blocks of information) is illustrated by summarizing the learning process of the MVP-FORTH system (Park, 1983).

  8. Efficiency of working memory: Theoretical concept and practical application

    OpenAIRE

    Lalović Dejan

    2008-01-01

    Efficiency of working memory is the concept which connects psychology of memory with different fields of cognitive, differential and applied psychology. In this paper, the history of interest for the assessment of the capacity of short-term memory is presented in brief, as well as the different methods used nowadays to assess the individual differences in the efficiency of working memory. What follows is the consideration of studies that indicate the existence of significant links between the...

  9. TiAu based shape memory alloys for high temperature applications

    International Nuclear Information System (INIS)

    Wadood, Abdul; Yamabe-Mitarai, Yoko; Hosoda, Hideki

    2014-01-01

    TiAu (equiatomic) exhibits phase transformaion from B2 (ordered bcc) to thermo-elastic orthorhombic B19 martensite at about 875K and thus TiAu is categorized as high temperature shape memory alloy. In this study, recent research and developments related to TiAu based high temperature shape memory alloys will be discussed in the Introduction part. Then some results of our research group related to strengthening of TiAu based high temperature shape memory alloys will be presented. Potential of TiAu based shape memory alloys for high temperature shape memory materials applications will also be discussed

  10. Hardware Compilation of Application-Specific Memory-Access Interconnect

    DEFF Research Database (Denmark)

    Venkataramani, Girish; Bjerregaard, Tobias; Chelcea, Tiberiu

    2006-01-01

    operations dependent on memory reads. More fundamental is that dependences between accesses may not be statically provable (e.g., if the specification language permits pointers), which introduces memory-consistency problems. Addressing these issues with static scheduling results in overly conservative...... enables specifications to include arbitrary memory references (e.g., pointers) and allows the memory system to incorporate features that might cause the latency of a memory access to vary dynamically. This results in raising the level of abstraction in the input specification, enabling faster design times...

  11. A review of emerging non-volatile memory (NVM) technologies and applications

    Science.gov (United States)

    Chen, An

    2016-11-01

    This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

  12. Ferroelectric-gate field effect transistor memories device physics and applications

    CERN Document Server

    Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

    2016-01-01

    This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

  13. Performance characteristics of shape memory alloy and its applications for fusion technology

    International Nuclear Information System (INIS)

    Nishikawa, Masahiro; Watanabe, Kenji

    1987-01-01

    As a shape memory alloy, Au-Cd alloy was found in 1951. Thereafter, also in In-Tl alloy, shape memory effect was found. The U.S. Naval Ordinance Laboratory developed Ni-Ti alloy, and published in 1965 as NITINOL. As Cu group shape memory alloys, there are Cu-Zn-Al alloy, Cu-Al-Be alloy and Cu-Al-Ni alloy. Recently, iron group shape memory alloy was published. In 1975, 'Shape memory effect and its application' symposium, in 1978, 'NITINOL heat engine international conference', and in 1982 and 1986, 'Martensite transformation international conference' were held, and the method of the proper use of shape memory alloys and the problems of the alloys themselves such as fatigue have been gradually clarified. In this report, the fundamental action characteristics of shape memory alloys are discribed from the viewpoint of the application, and the possibility of applying these characteristics to nuclear fusion devices and the advantage obtained as the result are explained. Shape memory effect and pseudo-elasticity, reversible shape memory effect, the thermodynamic behavior of shape memory alloys, transformation temperature range and using temperature range and so on are described. (Kako, I.)

  14. Partitioning and Scheduling DSP Applications with Maximal Memory Access Hiding

    Directory of Open Access Journals (Sweden)

    Sha Edwin Hsing-Mean

    2002-01-01

    Full Text Available This paper presents an iteration space partitioning scheme to reduce the CPU idle time due to the long memory access latency. We take into consideration both the data accesses of intermediate and initial data. An algorithm is proposed to find the largest overlap for initial data to reduce the entire memory traffic. In order to efficiently hide the memory latency, another algorithm is developed to balance the ALU and memory schedules. The experiments on DSP benchmarks show that the algorithms significantly outperform the known existing methods.

  15. Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application

    Science.gov (United States)

    Bae, Hagyoul; Lee, Byung-Hyun; Lee, Dongil; Seol, Myeong-Lok; Kim, Daewon; Han, Jin-Woo; Kim, Choong-Ki; Jeon, Seung-Bae; Ahn, Daechul; Park, Sang-Jae; Park, Jun-Young; Choi, Yang-Kyu

    2016-12-01

    We report the transient memory device by means of a water soluble SSG (solid sodium with glycerine) paper. This material has a hydroscopic property hence it can be soluble in water. In terms of physical security of memory devices, prompt abrogation of a memory device which stored a large number of data is crucial when it is stolen because all of things have identified information in the memory device. By utilizing the SSG paper as a substrate, we fabricated a disposable resistive random access memory (RRAM) which has good data retention of longer than 106 seconds and cycling endurance of 300 cycles. This memory device is dissolved within 10 seconds thus it can never be recovered or replicated. By employing direct printing but not lithography technology to aim low cost and disposable applications, the memory capacity tends to be limited less than kilo-bits. However, unlike high memory capacity demand for consumer electronics, the proposed device is targeting for security applications. With this regards, the sub-kilobit memory capacity should find the applications such as one-time usable personal identification, authentication code storage, cryptography key, and smart delivery tag. This aspect is attractive for security and protection system against unauthorized accessibility.

  16. Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

    Science.gov (United States)

    Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

    2009-01-01

    We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

  17. MoO3 trapping layers with CF4 plasma treatment in flash memory applications

    International Nuclear Information System (INIS)

    Kao, Chuyan Haur; Chen, Hsiang; Chen, Su-Zhien; Chen, Chian Yu; Lo, Kuang-Yu; Lin, Chun Han

    2014-01-01

    Highlights: • MoO 3 -based flash memories have been fabricated. • CF4 plasma treatment could enhance good memory performance. • Material analyses confirm that plasma treatment eliminated defects. • Fluorine atoms might fix the dangling bonds. - Abstract: In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications

  18. Memory

    OpenAIRE

    Wager, Nadia

    2017-01-01

    This chapter will explore a response to traumatic victimisation which has divided the opinions of psychologists at an exponential rate. We will be examining amnesia for memories of childhood sexual abuse and the potential to recover these memories in adulthood. Whilst this phenomenon is generally accepted in clinical circles, it is seen as highly contentious amongst research psychologists, particularly experimental cognitive psychologists. The chapter will begin with a real case study of a wo...

  19. Efficiency of working memory: Theoretical concept and practical application

    Directory of Open Access Journals (Sweden)

    Lalović Dejan

    2008-01-01

    Full Text Available Efficiency of working memory is the concept which connects psychology of memory with different fields of cognitive, differential and applied psychology. In this paper, the history of interest for the assessment of the capacity of short-term memory is presented in brief, as well as the different methods used nowadays to assess the individual differences in the efficiency of working memory. What follows is the consideration of studies that indicate the existence of significant links between the efficiency of working memory and general intelligence, the ability of reasoning, personality variables, as well as some socio-psychological phenomena. Special emphasis is placed on the links between the efficiency of working memory and certain aspects of pedagogical practice: acquiring the skill of reading, learning arithmetic and shedding light on the cause of general failure in learning at school. What is also provided are the suggestions that, in the light of knowledge about the development and limitations of working memory at school age, can be useful for teaching practice.

  20. Statistical Inference on Memory Structure of Processes and Its Applications to Information Theory

    Science.gov (United States)

    2016-05-12

    Distribution Unlimited UU UU UU UU 12-05-2016 15-May-2014 14-Feb-2015 Final Report: Statistical Inference on Memory Structure of Processes and Its Applications ...ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 mathematical statistics ; time series; Markov chains; random...journals: Final Report: Statistical Inference on Memory Structure of Processes and Its Applications to Information Theory Report Title Three areas

  1. Magnetic Shape Memory Alloy Actuator for Instrument Applications

    Data.gov (United States)

    National Aeronautics and Space Administration — This project will develop a simple actuator based on magnetic shape memory alloy (MSMA), a novel new family of crystalline materials which exhibit strain deformation...

  2. Axially modulated arch resonator for logic and memory applications

    KAUST Repository

    Hafiz, Md Abdullah Al; Tella, Sherif Adekunle; Alcheikh, Nouha; Fariborzi, Hossein; Younis, Mohammad I.

    2018-01-01

    We demonstrate reconfigurable logic and random access memory devices based on an axially modulated clamped-guided arch resonator. The device is electrostatically actuated and the motional signal is capacitively sensed, while the resonance frequency

  3. Memories.

    Science.gov (United States)

    Brand, Judith, Ed.

    1998-01-01

    This theme issue of the journal "Exploring" covers the topic of "memories" and describes an exhibition at San Francisco's Exploratorium that ran from May 22, 1998 through January 1999 and that contained over 40 hands-on exhibits, demonstrations, artworks, images, sounds, smells, and tastes that demonstrated and depicted the biological,…

  4. Axially modulated arch resonator for logic and memory applications

    KAUST Repository

    Hafiz, Md Abdullah Al

    2018-01-17

    We demonstrate reconfigurable logic and random access memory devices based on an axially modulated clamped-guided arch resonator. The device is electrostatically actuated and the motional signal is capacitively sensed, while the resonance frequency is modulated through an axial electrostatic force from the guided side of the microbeam. A multi-physics finite element model is used to verify the effectiveness of the axial modulation. We present two case studies: first, a reconfigurable two-input logic gate based on the linear resonance frequency modulation, and second, a memory element based on the hysteretic frequency response of the resonator working in the nonlinear regime. The energy consumptions of the device for both logic and memory operations are in the range of picojoules, promising for energy efficient alternative computing paradigm.

  5. Communication and Memory Architecture Design of Application-Specific High-End Multiprocessors

    Directory of Open Access Journals (Sweden)

    Yahya Jan

    2012-01-01

    Full Text Available This paper is devoted to the design of communication and memory architectures of massively parallel hardware multiprocessors necessary for the implementation of highly demanding applications. We demonstrated that for the massively parallel hardware multiprocessors the traditionally used flat communication architectures and multi-port memories do not scale well, and the memory and communication network influence on both the throughput and circuit area dominates the processors influence. To resolve the problems and ensure scalability, we proposed to design highly optimized application-specific hierarchical and/or partitioned communication and memory architectures through exploring and exploiting the regularity and hierarchy of the actual data flows of a given application. Furthermore, we proposed some data distribution and related data mapping schemes in the shared (global partitioned memories with the aim to eliminate the memory access conflicts, as well as, to ensure that our communication design strategies will be applicable. We incorporated these architecture synthesis strategies into our quality-driven model-based multi-processor design method and related automated architecture exploration framework. Using this framework, we performed a large series of experiments that demonstrate many various important features of the synthesized memory and communication architectures. They also demonstrate that our method and related framework are able to efficiently synthesize well scalable memory and communication architectures even for the high-end multiprocessors. The gains as high as 12-times in performance and 25-times in area can be obtained when using the hierarchical communication networks instead of the flat networks. However, for the high parallelism levels only the partitioned approach ensures the scalability in performance.

  6. High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

    International Nuclear Information System (INIS)

    Ping, Mao; Zhi-Gang, Zhang; Li-Yang, Pan; Jun, Xu; Pei-Yi, Chen

    2009-01-01

    Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10 12 cm −2 ), small size (2–4 nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs

  7. Medical applications of accelerators at Tata Memorial Centre

    International Nuclear Information System (INIS)

    Dinshaw, K.A.

    2003-01-01

    The Tata Memorial Centre constitutes the national comprehensive cancer centre for the prevention, diagnosis, treatment and research on cancer. It is well equipped with sophisticated state-of-the-art equipment capable of delivering External Beam Radiotherapy (Ebert) and Brachytherapy. Nearly 400 patients receive Ebert daily at the institute from a team of highly skilled and dedicated radiation oncologists, medical physicists and technologists, making it one of the busiest centres in the country

  8. Orthodontic applications of a superelastic shape-memory alloy model

    International Nuclear Information System (INIS)

    Glendenning, R.W.; Enlow, R.L.

    2000-01-01

    During orthodontic treatment, dental appliances (braces) made of shape memory alloys have the potential to provide nearly uniform low level stresses to dentitions during tooth movement over a large range of tooth displacement. In this paper we model superelastic behaviour of dental appliances using the finite element method and constitutive equations developed by F. Auricchio et al. Results of the mathematical model for 3-point bending and several promising 'closing loop' designs are compared with laboratory results for the same configurations. (orig.)

  9. [A neuropsychoanalytic freudian model of psychic trauma and memory. Theoretical and clinical applications].

    Science.gov (United States)

    Cohen, Diego; Basili, Rubén; Sharpin de Basili, Isabel

    2009-01-01

    The traumatic memory is conceptualized by means of an amplified Freudian neuropsychoanalytic model using a contemporary memory system based on its contents, conscious and unconscious recollection (explicit and implicit memories) highlighting the validity of the Freudian discoveries. This is then related to the psychoanalytical theories of consciousness, affects and thinking. Particular importance is given to Freud's seduction theory, its relation to memory and the clinical application of these concepts to the basic organization of the personality, together with the relation to Bowlby's concept of emotional deprivation. The development and working trough of trauma is postulated as a vector to make "real" or phantasized trauma unconscious through repression in neurosis, splitting in borderline personality organization, and primitive mechanisms of projection in psychosis.

  10. Estimation and Application of Ecological Memory Functions in Time and Space

    Science.gov (United States)

    Itter, M.; Finley, A. O.; Dawson, A.

    2017-12-01

    A common goal in quantitative ecology is the estimation or prediction of ecological processes as a function of explanatory variables (or covariates). Frequently, the ecological process of interest and associated covariates vary in time, space, or both. Theory indicates many ecological processes exhibit memory to local, past conditions. Despite such theoretical understanding, few methods exist to integrate observations from the recent past or within a local neighborhood as drivers of these processes. We build upon recent methodological advances in ecology and spatial statistics to develop a Bayesian hierarchical framework to estimate so-called ecological memory functions; that is, weight-generating functions that specify the relative importance of local, past covariate observations to ecological processes. Memory functions are estimated using a set of basis functions in time and/or space, allowing for flexible ecological memory based on a reduced set of parameters. Ecological memory functions are entirely data driven under the Bayesian hierarchical framework—no a priori assumptions are made regarding functional forms. Memory function uncertainty follows directly from posterior distributions for model parameters allowing for tractable propagation of error to predictions of ecological processes. We apply the model framework to simulated spatio-temporal datasets generated using memory functions of varying complexity. The framework is also applied to estimate the ecological memory of annual boreal forest growth to local, past water availability. Consistent with ecological understanding of boreal forest growth dynamics, memory to past water availability peaks in the year previous to growth and slowly decays to zero in five to eight years. The Bayesian hierarchical framework has applicability to a broad range of ecosystems and processes allowing for increased understanding of ecosystem responses to local and past conditions and improved prediction of ecological

  11. Short-memory linear processes and econometric applications

    CERN Document Server

    Mynbaev, Kairat T

    2011-01-01

    This book serves as a comprehensive source of asymptotic results for econometric models with deterministic exogenous regressors. Such regressors include linear (more generally, piece-wise polynomial) trends, seasonally oscillating functions, and slowly varying functions including logarithmic trends, as well as some specifications of spatial matrices in the theory of spatial models. The book begins with central limit theorems (CLTs) for weighted sums of short memory linear processes. This part contains the analysis of certain operators in Lp spaces and their employment in the derivation of CLTs

  12. Linear filtering of systems with memory and application to finance

    Directory of Open Access Journals (Sweden)

    2006-01-01

    Full Text Available We study the linear filtering problem for systems driven by continuous Gaussian processes V ( 1 and V ( 2 with memory described by two parameters. The processes V ( j have the virtue that they possess stationary increments and simple semimartingale representations simultaneously. They allow for straightforward parameter estimations. After giving the semimartingale representations of V ( j by innovation theory, we derive Kalman-Bucy-type filtering equations for the systems. We apply the result to the optimal portfolio problem for an investor with partial observations. We illustrate the tractability of the filtering algorithm by numerical implementations.

  13. Orthodontic applications of a superelastic shape-memory alloy model

    Energy Technology Data Exchange (ETDEWEB)

    Glendenning, R.W.; Enlow, R.L. [Otago Univ., Dunedin (New Zealand). Dept. of Math. and Stat.; Hood, J.A.A. [Dept. of Oral Sciences and Orthodontics, Univ. of Otago, Dunedin (New Zealand)

    2000-07-01

    During orthodontic treatment, dental appliances (braces) made of shape memory alloys have the potential to provide nearly uniform low level stresses to dentitions during tooth movement over a large range of tooth displacement. In this paper we model superelastic behaviour of dental appliances using the finite element method and constitutive equations developed by F. Auricchio et al. Results of the mathematical model for 3-point bending and several promising 'closing loop' designs are compared with laboratory results for the same configurations. (orig.)

  14. A Shape Memory Alloy Application for Compact Unmanned Aerial Vehicles

    Directory of Open Access Journals (Sweden)

    Salvatore Ameduri

    2016-05-01

    Full Text Available Shape memory alloys materials, SMA, offer several advantages that designers can rely on such as the possibility of transmitting large forces and deformations, compactness, and the intrinsic capability to absorb loads. Their use as monolithic actuators, moreover, can lead to potential simplifications of the system, through a reduction of number of parts and the removal of many free play gaps among mechanics. For these reasons, technological aerospace research is focusing on this kind of technology more and more, even though fatigue life, performance degradation, and other issues are still open. In the work at hand, landing gear for unmanned aerial vehicles, UAV, is presented, integrated with shape memory alloys springs as actuation devices. A conceptual prototype has been realized to verify the system ability in satisfying specs, in terms of deployment and retraction capability. Starting from the proposed device working principle and the main design parameters identification, the design phase is faced, setting those parameters to meet weight, deployment angle, energy consumption, and available room requirements. Then, system modeling and performance prediction is performed and finally a correlation between numerical and experimental results is presented.

  15. Optimal proximity correction: application for flash memory design

    Science.gov (United States)

    Chen, Y. O.; Huang, D. L.; Sung, K. T.; Chiang, J. J.; Yu, M.; Teng, F.; Chu, Lung; Rey, Juan C.; Bernard, Douglas A.; Li, Jiangwei; Li, Junling; Moroz, V.; Boksha, Victor V.

    1998-06-01

    Proximity Correction is the technology for which the most of IC manufacturers are committed already. The final intended result of correction is affected by many factors other than the optical characteristics of the mask-stepper system, such as photoresist exposure, post-exposure bake and development parameters, etch selectivity and anisotropy, and underlying topography. The most advanced industry and research groups already reported immediate need to consider wafer topography as one of the major components during a Proximity Correction procedure. In the present work we are discussing the corners rounding effect (which eventually cause electrical leakage) observed for the elements of Poly2 layer for a Flash Memory Design. It was found that the rounding originated by three- dimensional effects due to variation of photoresist thickness resulting from the non-planar substrate. Our major goal was to understand the reasons and correct corner rounding. As a result of this work highly effective layout correction methodology was demonstrated and manufacturable Depth Of Focus was achieved. Another purpose of the work was to demonstrate complete integration flow for a Flash Memory Design based on photolithography; deposition/etch; ion implantation/oxidation/diffusion; and device simulators.

  16. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

    KAUST Repository

    Wang, Jer-Chyi

    2016-11-23

    Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

  17. An investigation of shape memory alloys as actuating elements in aerospace morphing applications

    DEFF Research Database (Denmark)

    Karagiannis, Dimitrios; Stamatelos, Dimtrios; Kappatos, Vasileios

    2017-01-01

    Two innovative actuating concepts for aerospace morphing applications, based on Shape Memory Alloys (SMAs), are proposed. The first concept investigates a composite plate incorporating embedded SMA wires. A Nonlinear Auto Regressive with eXogenous excitation (NARX) model is proposed for controlling...

  18. Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

    CERN Document Server

    Okuyama, Masanori

    2005-01-01

    Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

  19. Discrete memory schemes for finite strain thermoplasticity and application to shape memory alloys

    International Nuclear Information System (INIS)

    Favier, D.; Guelin, P.; Pegon, P.; Nowacki, W.K.

    1987-01-01

    A theory of finite strain plasticity has been proposed: The scheme of pure hysteresis with mixed transport has been extended to the case of non-rotational kinematics. Secondly, the simple shear case has been studied, taking into account Drucker's recent analysis regarding the 'appropriate simple idealizations for finite plasticity'. Illustrations are provided for general stress/strain paths. Also a new theory of isotropic hyperelasticity has been proposed. The 'reversible' relative Cauchy stress tensor (of type (1,1) and weight one) is defined in the dragged along coordinates as a tensorial isotropic function of the Almansi tensor and of its invariants (through the partial derivatives of the actual scalar density of elastic energy per unit extent of dragged along coordinates). The correspondance between strain and stress paths is then defined in a general form which is particularly convenient for the study of first order effects, limit behaviours, coupling and second order effects. Illustrations are provided. The addition of the pure hysteresis stress contribution σ a and of the reversible contribution σ rev leads to a scheme of 'superelasticity' departure to obtain a provisional scheme of shape memory effects. Some remarks are given regarding some of the possible generalizations of the scheme. (orig./GL)

  20. Si-Sb-Te materials for phase change memory applications

    International Nuclear Information System (INIS)

    Rao Feng; Song Zhitang; Ren Kun; Zhou Xilin; Cheng Yan; Wu Liangcai; Liu Bo

    2011-01-01

    Si-Sb-Te materials including Te-rich Si 2 Sb 2 Te 6 and Si x Sb 2 Te 3 with different Si contents have been systemically studied with the aim of finding the most suitable Si-Sb-Te composition for phase change random access memory (PCRAM) use. Si x Sb 2 Te 3 shows better thermal stability than Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 in that Si x Sb 2 Te 3 does not have serious Te separation under high annealing temperature. As Si content increases, the data retention ability of Si x Sb 2 Te 3 improves. The 10 years retention temperature for Si 3 Sb 2 Te 3 film is ∼ 393 K, which meets the long-term data storage requirements of automotive electronics. In addition, Si richer Si x Sb 2 Te 3 films also show improvement on thickness change upon annealing and adhesion on SiO 2 substrate compared to those of Ge 2 Sb 2 Te 5 or Si 2 Sb 2 Te 6 films. However, the electrical performance of PCRAM cells based on Si x Sb 2 Te 3 films with x > 3.5 becomes worse in terms of stable and long-term operations. Si x Sb 2 Te 3 materials with 3 < x < 3.5 are proved to be suitable for PCRAM use to ensure good overall performance.

  1. Bipolar one diode-one resistor integration for high-density resistive memory applications.

    Science.gov (United States)

    Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Hongwei; Zhang, Kangwei; Huo, Zongliang; Liu, Ming

    2013-06-07

    Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.

  2. Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

    International Nuclear Information System (INIS)

    Linn, E; Ferch, S; Waser, R; Menzel, S

    2013-01-01

    Dynamic physics-based models of resistive switching devices are of great interest for the realization of complex circuits required for memory, logic and neuromorphic applications. Here, we apply such a model of an electrochemical metallization (ECM) cell to complementary resistive switches (CRSs), which are favorable devices to realize ultra-dense passive crossbar arrays. Since a CRS consists of two resistive switching devices, it is straightforward to apply the dynamic ECM model for CRS simulation with MATLAB and SPICE, enabling study of the device behavior in terms of sweep rate and series resistance variations. Furthermore, typical memory access operations as well as basic implication logic operations can be analyzed, revealing requirements for proper spike and level read operations. This basic understanding facilitates applications of massively parallel computing paradigms required for neuromorphic applications. (paper)

  3. Mild cognitive impairment: applicability of research criteria in a memory clinic and characterization of cognitive profile.

    Science.gov (United States)

    Alladi, Suvarna; Arnold, Robert; Mitchell, Joanna; Nestor, Peter J; Hodges, John R

    2006-04-01

    We explored the applicability of recently proposed research criteria for mild cognitive impairment (MCI) in a memory clinic and changes in case definition related to which memory tests are used and the status of general cognitive function in MCI. A total of 166 consecutive GP referrals to the Cambridge Memory Clinic underwent comprehensive neuropsychological and psychiatric evaluation. Of 166 cases, 42 were excluded (significant depression 8, established dementia 29 and other disorders 5). Of 124 non-demented, non-depressed patients, 72 fulfilled Petersen's criteria for amnestic MCI based upon verbal memory performance [the Rey Auditory Verbal Learning Test (RAVLT)] and 90 met criteria if performance on verbal and/or non-verbal memory tests [the Rey figure recall or the Paired Associates Learning test (PAL)] was considered. Of the 90 broadly defined MCI cases, only 25 had pure amnesia: other subtle semantic and/or attention deficits were typically present. A further 12 were classed as non-amnestic MCI and 22 as 'worried well'. Definition of MCI varies considerably dependent upon the tests used for case definition. The majority have other cognitive deficits despite normal performance on the Mini-mental State Examination (MMSE) and intact activities of daily living (ADL) and fit within multi-domain MCI. Pure amnesic MCI is rare.

  4. DSA patterning options for logics and memory applications

    Science.gov (United States)

    Liu, Chi-Chun; Franke, Elliott; Mignot, Yann; LeFevre, Scott; Sieg, Stuart; Chi, Cheng; Meli, Luciana; Parnell, Doni; Schmidt, Kristin; Sanchez, Martha; Singh, Lovejeet; Furukawa, Tsuyoshi; Seshadri, Indira; De Silva, Ekmini Anuja; Tsai, Hsinyu; Lai, Kafai; Truong, Hoa; Farrell, Richard; Bruce, Robert; Somervell, Mark; Sanders, Daniel; Felix, Nelson; Arnold, John; Hetzer, David; Ko, Akiteru; Metz, Andrew; Colburn, Matthew; Corliss, Daniel

    2017-03-01

    The progress of three potential DSA applications, i.e. fin formation, via shrink, and pillars, were reviewed in this paper. For fin application, in addition to pattern quality, other important considerations such as customization and design flexibility were discussed. An electrical viachain study verified the DSA rectification effect on CD distribution by showing a tighter current distribution compared to that derived from the guiding pattern direct transfer without using DSA. Finally, a structural demonstration of pillar formation highlights the importance of pattern transfer in retaining both the CD and local CDU improvement from DSA. The learning from these three case studies can provide perspectives that may not have been considered thoroughly in the past. By including more important elements during DSA process development, the DSA maturity can be further advanced and move DSA closer to HVM adoption.

  5. A review on shape memory alloys with applications to morphing aircraft

    International Nuclear Information System (INIS)

    Barbarino, S; Saavedra Flores, E I; Ajaj, R M; Dayyani, I; Friswell, M I

    2014-01-01

    Shape memory alloys (SMAs) are a unique class of metallic materials with the ability to recover their original shape at certain characteristic temperatures (shape memory effect), even under high applied loads and large inelastic deformations, or to undergo large strains without plastic deformation or failure (super-elasticity). In this review, we describe the main features of SMAs, their constitutive models and their properties. We also review the fatigue behavior of SMAs and some methods adopted to remove or reduce its undesirable effects. SMAs have been used in a wide variety of applications in different fields. In this review, we focus on the use of shape memory alloys in the context of morphing aircraft, with particular emphasis on variable twist and camber, and also on actuation bandwidth and reduction of power consumption. These applications prove particularly challenging because novel configurations are adopted to maximize integration and effectiveness of SMAs, which play the role of an actuator (using the shape memory effect), often combined with structural, load-carrying capabilities. Iterative and multi-disciplinary modeling is therefore necessary due to the fluid–structure interaction combined with the nonlinear behavior of SMAs. (topical review)

  6. Applicability of the Rivermead Behavioural Memory Test - Third Edition (RBMT-3) in Korsakoff's syndrome and chronic alcoholics

    NARCIS (Netherlands)

    Wester, A.J.; Herten, J.C. van; Egger, J.I.M.; Kessels, R.P.C.

    2013-01-01

    Purpose: To examine the applicability of the newly developed Rivermead Behavioural Memory Test – Third Edition (RBMT-3) as an ecologically-valid memory test in patients with alcohol-related cognitive disorders. Patients and methods: An authorized Dutch translation of the RBMT-3 was developed,

  7. Applicability of the Rivermead Behavioural Memory Test - Third Edition (RBMT-3) in Korsakoff's syndrome and chronic alcoholics

    NARCIS (Netherlands)

    Wester, A.J.; Herten, J.C. van; Egger, J.I.; Kessels, R.P.C.

    2013-01-01

    PURPOSE: To examine the applicability of the newly developed Rivermead Behavioural Memory Test - Third Edition (RBMT-3) as an ecologically-valid memory test in patients with alcohol-related cognitive disorders. PATIENTS AND METHODS: An authorized Dutch translation of the RBMT-3 was developed,

  8. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  9. Design of two-terminal PNPN diode for high-density and high-speed memory applications

    International Nuclear Information System (INIS)

    Tong Xiaodong; Wu Hao; Liang Qingqing; Zhong Huicai; Zhu Huilong; Zhao Chao; Ye Tianchun

    2014-01-01

    A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design for high-speed operations was studied with experiments and calibrated simulations, which proves that the proposed memory cell can be operated at nanosecond range. The static and dynamic power dissipations were also studied, which indicated the availability of the proposed memory cell for VLSI applications. Moreover, the memory cell is compatible with CMOS process, has little impact from process variation, and has good reliability. (semiconductor devices)

  10. Preparation and characterization of Sb2Se3 devices for memory applications

    Science.gov (United States)

    Shylashree, N.; Uma B., V.; Dhanush, S.; Abachi, Sagar; Nisarga, A.; Aashith, K.; Sangeetha B., G.

    2018-05-01

    In this paper, A phase change material of Sb2Se3 was proposed for non volatile memory application. The thin film device preparation and characterization were carried out. The deposition method used was vapor evaporation technique and a thickness of 180nm was deposited. The switching between the SET and RESET state is shown by the I-V characterization. The change of phase was studied using R-V characterization. Different fundamental modes were also identified using Raman spectroscopy.

  11. Space radiation evaluation of 16Mbit DRAMs for mass memory applications

    International Nuclear Information System (INIS)

    Calvel, P.; Lamothe, P.; Barillot, C.; Ecoffet, R.; Duzellier, S.; Stassinopoulos, E.G.

    1994-01-01

    In the frame of Mass Memory Applications for space missions, 16 Mbit DRAM from IBM and TEXAS INSTRUMENTS have been evaluated to space radiation, by the CECIL heavy ions testing coordination group. This paper presents heavy ions, protons and total dose data results for 16 Mbit DRAMs from IBM and TEXAS INSTRUMENTS, including a 'built-in ECC' DRAM. Single Event Phenomena rate are calculated for low earth orbits

  12. Application of complex programmable logic devices in memory radiation effects test system

    International Nuclear Information System (INIS)

    Li Yonghong; He Chaohui; Yang Hailiang; He Baoping

    2005-01-01

    The application of the complex programmable logic device (CPLD) in electronics is emphatically discussed. The method of using software MAX + plus II and CPLD are introduced. A new test system for memory radiation effects is established by using CPLD devices-EPM7128C84-15. The old test system's function are realized and, moreover, a number of small scale integrated circuits are reduced and the test system's reliability is improved. (authors)

  13. Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

  14. Mosaic: An Application-Transparent Hardware-Software Cooperative Memory Manager for GPUs

    OpenAIRE

    Ausavarungnirun, Rachata; Landgraf, Joshua; Miller, Vance; Ghose, Saugata; Gandhi, Jayneel; Rossbach, Christopher J.; Mutlu, Onur

    2018-01-01

    Modern GPUs face a trade-off on how the page size used for memory management affects address translation and demand paging. Support for multiple page sizes can help relax the page size trade-off so that address translation and demand paging optimizations work together synergistically. However, existing page coalescing and splintering policies require costly base page migrations that undermine the benefits multiple page sizes provide. In this paper, we observe that GPGPU applications present a...

  15. 16-bit error detection and correction (EDAC) controller design using FPGA for critical memory applications

    International Nuclear Information System (INIS)

    Misra, M.K.; Sridhar, N.; Krishnakumar, B.; Ilango Sambasivan, S.

    2002-01-01

    Full text: Complex electronic systems require the utmost reliability, especially when the storage and retrieval of critical data demands faultless operation, the system designer must strive for the highest reliability possible. Extra effort must be expended to achieve this reliability. Fortunately, not all systems must operate with these ultra reliability requirements. The majority of systems operate in an area where system failure is not hazardous. But the applications like nuclear reactors, medical and avionics are the areas where system failure may prove to have harsh consequences. High-density memories generate errors in their stored data due to external disturbances like power supply surges, system noise, natural radiation etc. These errors are called soft errors or transient errors, since they don't cause permanent damage to the memory cell. Hard errors may also occur on system memory boards. These hard errors occur if one RAM component or RAM cell fails and is stuck at either 0 or 1. Although less frequent, hard errors may cause a complete system failure. These are the major problems associated with memories

  16. Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications

    Science.gov (United States)

    Baek, Il-Jin; Cho, Won-Ju

    2018-02-01

    We developed a hybrid organic-inorganic resistive random access memory (ReRAM) device that uses a solution-process to overcome the disadvantages of organic and inorganic materials for flexible memory applications. The drawbacks of organic and inorganic materials are a poor electrical characteristics and a lack of flexibility, respectively. We fabricated a hybrid organic-inorganic switching layer of ReRAM by blending HfOx or AlOx solution with PMMA solution and investigated the resistive switching behaviour in Ti/PMMA/Pt, Ti/PMMA-HfOx/Pt and Ti/PMMA-AlOx/Pt structures. It is found that PMMA-HfOx or PMMA-AlOx hybrid switching layer has a larger memory window, more stable durability and retention characteristics, and a better set/reset voltage distribution than PMMA layer. Further, it is confirmed that the flexibility of the PMMA-HfOx and PMMA-AlOx blended films was almost similar to that of the organic PMMA film. Thus, the solution-processed organic-inorganic blended films are considered a promising material for a non-volatile memory device on a flexible or wearable electronic system.

  17. Threshold-voltage modulated phase change heterojunction for application of high density memory

    International Nuclear Information System (INIS)

    Yan, Baihan; Tong, Hao; Qian, Hang; Miao, Xiangshui

    2015-01-01

    Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current

  18. Threshold-voltage modulated phase change heterojunction for application of high density memory

    Science.gov (United States)

    Yan, Baihan; Tong, Hao; Qian, Hang; Miao, Xiangshui

    2015-09-01

    Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.

  19. Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications.

    Science.gov (United States)

    Hu, Liang; Yuan, Jun; Ren, Yi; Wang, Yan; Yang, Jia-Qin; Zhou, Ye; Zeng, Yu-Jia; Han, Su-Ting; Ruan, Shuangchen

    2018-06-10

    High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-04-24

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

  1. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

    2004-02-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

  2. Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

    International Nuclear Information System (INIS)

    Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

    2004-01-01

    An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

  3. High throughput nanoimprint lithography for semiconductor memory applications

    Science.gov (United States)

    Ye, Zhengmao; Zhang, Wei; Khusnatdinov, Niyaz; Stachowiak, Tim; Irving, J. W.; Longsine, Whitney; Traub, Matthew; Fletcher, Brian; Liu, Weijun

    2017-03-01

    Imprint lithography is a promising technology for replication of nano-scale features. For semiconductor device applications, Canon deposits a low viscosity resist on a field by field basis using jetting technology. A patterned mask is lowered into the resist fluid which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is crosslinked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate. There are two critical components to meeting throughput requirements for imprint lithography. Using a similar approach to what is already done for many deposition and etch processes, imprint stations can be clustered to enhance throughput. The FPA-1200NZ2C is a four station cluster system designed for high volume manufacturing. For a single station, throughput includes overhead, resist dispense, resist fill time (or spread time), exposure and separation. Resist exposure time and mask/wafer separation are well understood processing steps with typical durations on the order of 0.10 to 0.20 seconds. To achieve a total process throughput of 17 wafers per hour (wph) for a single station, it is necessary to complete the fluid fill step in 1.2 seconds. For a throughput of 20 wph, fill time must be reduced to only one 1.1 seconds. There are several parameters that can impact resist filling. Key parameters include resist drop volume (smaller is better), system controls (which address drop spreading after jetting), Design for Imprint or DFI (to accelerate drop spreading) and material engineering (to promote wetting between the resist and underlying adhesion layer). In addition, it is mandatory to maintain fast filling, even for edge field imprinting. In this paper, we address the improvements made in all of these parameters to first enable a 1.20 second filling process for a device like pattern and have demonstrated this capability for both full fields and edge fields. Non

  4. A review of shape memory material’s applications in the offshore oil and gas industry

    Science.gov (United States)

    Patil, Devendra; Song, Gangbing

    2017-09-01

    The continuously increasing demand for oil and gas and the depleting number of new large reservoir discoveries have made it necessary for the oil and gas industry to investigate and design new, improved technologies that unlock new sources of energy and squeeze more from existing resources. Shape memory materials (SMM), with their remarkable properties such as the shape memory effect (SME), corrosion resistance, and superelasticity have shown great potential to meet these demands by significantly improving the functionality and durability of offshore systems. Shape memory alloy (SMA) and shape memory polymer (SMP) are two types of most commonly used SMM’s and are ideally suited for use over a range of robust engineering applications found within the oil and gas industry, such as deepwater actuators, valves, underwater connectors, seals, self-torqueing fasteners and sand management. The potential high strain and high force output of the SME of SMA can be harnessed to create a lightweight, solid state alternative to conventional hydraulic, pneumatic or motor based actuator systems. The phase transformation property enables the SMA to withstand erosive stresses, which is useful for minimizing the effect of erosion often experienced by downhole devices. The superelasticity of the SMA provides good energy dissipation, and can overcome the various defects and limitations suffered by conventional passive damping methods. The higher strain recovery during SME makes SMP ideal for developments of packers and sand management in downhole. The increasing number of SMM related research papers and patents from oil and gas industry indicate the growing research interest of the industry to implement SMM in offshore applications. This paper reviews the recent developments and applications of SMM in the offshore oil and gas industry.

  5. A shared memory based interface of MARTe with EPICS for real-time applications

    International Nuclear Information System (INIS)

    Yun, Sangwon; Neto, André C.; Park, Mikyung; Lee, Sangil; Park, Kaprai

    2014-01-01

    Highlights: • We implemented a shared memory based interface of MARTe with EPICS. • We implemented an EPICS module supporting device and driver support. • We implemented an example EPICS IOC and CSS OPI for evaluation. - Abstract: The Multithreaded Application Real-Time executor (MARTe) is a multi-platform C++ middleware designed for the implementation of real-time control systems. It currently supports the Linux, Linux + RTAI, VxWorks, Solaris and MS Windows platforms. In the fusion community MARTe is being used at JET, COMPASS, ISTTOK, FTU and RFX in fusion [1]. The Experimental Physics and Industrial Control System (EPICS), a standard framework for the control systems in KSTAR and ITER, is a set of software tools and applications which provide a software infrastructure for use in building distributed control systems to operate devices. For a MARTe based application to cooperate with an EPICS based application, an interface layer between MARTe and EPICS is required. To solve this issue, a number of interfacing solutions have been proposed and some of them have been implemented. Nevertheless, a new approach is required to mitigate the functional limitations of existing solutions and to improve their performance for real-time applications. This paper describes the design and implementation of a shared memory based interface between MARTe and EPICS

  6. A shared memory based interface of MARTe with EPICS for real-time applications

    Energy Technology Data Exchange (ETDEWEB)

    Yun, Sangwon, E-mail: yunsw@nfri.re.kr [National Fusion Research Institute (NFRI), Gwahangno 169-148, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Neto, André C. [Associação EURATOM/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, P-1049-001 Lisboa (Portugal); Park, Mikyung; Lee, Sangil; Park, Kaprai [National Fusion Research Institute (NFRI), Gwahangno 169-148, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of)

    2014-05-15

    Highlights: • We implemented a shared memory based interface of MARTe with EPICS. • We implemented an EPICS module supporting device and driver support. • We implemented an example EPICS IOC and CSS OPI for evaluation. - Abstract: The Multithreaded Application Real-Time executor (MARTe) is a multi-platform C++ middleware designed for the implementation of real-time control systems. It currently supports the Linux, Linux + RTAI, VxWorks, Solaris and MS Windows platforms. In the fusion community MARTe is being used at JET, COMPASS, ISTTOK, FTU and RFX in fusion [1]. The Experimental Physics and Industrial Control System (EPICS), a standard framework for the control systems in KSTAR and ITER, is a set of software tools and applications which provide a software infrastructure for use in building distributed control systems to operate devices. For a MARTe based application to cooperate with an EPICS based application, an interface layer between MARTe and EPICS is required. To solve this issue, a number of interfacing solutions have been proposed and some of them have been implemented. Nevertheless, a new approach is required to mitigate the functional limitations of existing solutions and to improve their performance for real-time applications. This paper describes the design and implementation of a shared memory based interface between MARTe and EPICS.

  7. Application of graphene oxide-poly (vinyl alcohol) polymer nanocomposite for memory devices

    Science.gov (United States)

    Kaushal, Jyoti; Kaur, Ravneet; Sharma, Jadab; Tripathi, S. K.

    2018-05-01

    Significant attention has been gained by polymer nanocomposites because of their possible demands in future electronic memory devices. In the present work, device based on Graphene Oxide (GO) and polyvinyl alcohol (PVA) has been made and examined for the memory device application. The prepared Graphene oxide (GO) and GO-PVA nanocomposite (NC) has been characterized by X-ray Diffraction (XRD). GO nanosheets show the diffraction peak at 2θ = 11.60° and the interlayer spacing of 0.761 nm. The XRD of GO-PVA NC shows the diffraction peak at 2θ =18.56°. The fabricated device shows bipolar switching behavior having ON/OFF current ratio ˜102. The Write-Read-Erase-Read (WRER) cycles test shows that the Al/GO-PVA/Ag device has good stability and repeatability.

  8. Applications and development of shape-memory and superelastic alloys in Japan

    Energy Technology Data Exchange (ETDEWEB)

    Takaoka, S.; Horikawa, H. [Furukawa Electric Co., Ltd., Hiratsuka (Japan); Kobayashi, J. [Japan Association of Shape Memory Alloys, Yokohama (Japan); Shimizu, K. [Kanazawa Inst. of Tech., Matsutou (Japan)

    2002-07-01

    The present situation of the applications and development of shape memory and superelastic alloys in Japan will collectively be introduced. Of many shape memory alloys, TiNi alloy systems have mostly been used for the applications from the point of view of fatigue and corrosion characteristics. Shape memory effect has been utilized for mainly thermal actuators with the form of coil springs. The effect associated with the B2 to R-phase transformation and its reversion exhibits recoverable strain of approximately 1%, and after a million thermal cycles the recovery characteristics are not affected. Thus, the effect is widely utilized as sensor flap of the air conditioner, water flow control valve, underfloor vent, automatic oil volume adjusting equipment for Shinkansen and water mixing valve. Another effect associated with the B2 to orthorhombic transformation and its reversion, as in TiNiCu alloys containing Cu more than 8%, can be applied to actuators required for 10,000 to 50,000 times life, and thus it is utilized as rice cooker, coffee maker and anti-scald valve. In Japan, however, the TiNi shape memory alloy systems are mainly used for applications using the superelasticity, like a rubber material. The superelasticity associated with the B2 to monoclinic stress-induced transformation and its reversion upon un-loading has been utilized as brassiere wire, eye glasses flame, antenna core wire for cellular phone and fishing wire, and that associated with the B2 to orthorhombic stress-induced transformation and its reversion upon un-loading has been as orthodontic wire, because the TiNiCu alloy wire exhibits smaller stress hysteresis than that of usual TiNi alloy wire. The TiNi shape memory alloy systems are now developed to make various shapes, such as tapes, foils and tubes, and the alloys with those shapes are examined to apply to medical uses, such as guide wire for catheter and catheter tube itself, and to any other uses. The development in Japan is rapidly

  9. Thermally responsive polymer systems for self-healing, reversible adhesion and shape memory applications

    Science.gov (United States)

    Luo, Xiaofan

    Responsive polymers are "smart" materials that are capable of performing prescribed, dynamic functions under an applied stimulus. In this dissertation, we explore several novel design strategies to develop thermally responsive polymers and polymer composites for self-healing, reversible adhesion and shape memory applications. In the first case described in Chapters 2 and 3, a thermally triggered self-healing material was prepared by blending a high-temperature epoxy resin with a thermoplastic polymer, poly(epsilon-caprolactone) (PCL). The initially miscible system undergoes polymerization induced phase separation (PIPS) during the curing of epoxy and yields a variety of compositionally dependent morphologies. At a particular PCL loading, the cured blend displays a "bricks-and-mortar" morphology in which epoxy exists as interconnected spheres ("bricks") within a continuous PCL matrix ("mortar"). A heat induced "bleeding" phenomenon was observed in the form of spontaneous wetting of all free surfaces by the molten PCL, and is attributed to the volumetric thermal expansion of PCL above its melting point in excess of epoxy brick expansion, which we term differential expansive bleeding (DEB). This DEB is capable of healing damage such as cracks. In controlled self-healing experiments, heating of a cracked specimen led to PCL bleeding from the bulk that yields a liquid layer bridging the crack gap. Upon cooling, a "scar" composed of PCL crystals was formed at the site of the crack, restoring a significant portion of mechanical strength. We further utilized DEB to enable strong and thermally-reversible adhesion of the material to itself and to metallic substrates, without any requirement for macroscopic softening or flow. After that, Chapters 4--6 present a novel composite strategy for the design and fabrication of shape memory polymer composites. The basic approach involves physically combining two or more functional components into an interpenetrating fiber

  10. Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

    International Nuclear Information System (INIS)

    Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

    2012-01-01

    Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH 3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH 3 -annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO 2 interface.

  11. Research on the Memory Ethics and Thought Transformation Pattern and the Applications on Contemporary Literature

    Institute of Scientific and Technical Information of China (English)

    Xinxin Li[1

    2016-01-01

    In this paper, we conduct research on the memory ethics and thought transformation pattern and the applications on contemporary literature. Compared to scientifi c thinking, historical thinking, the thinking process characterized by direct image of literary creation of system integration, literary creation process is a fi ction. Literary psychology studies have shown that the transmission of literature as a kind of aesthetic experience, is far from perfect memories of feature, but memory, association, imagination, illusion, such as the result of the comprehensive sports psychological function, is in the creation subject specifi c emotions and as under the guidance of the appearance of the restructuring, merger. From the discussion above we can see that whether it is a literary language of authenticity, or false judgment characteristics of literary language, explain the fact that in literary text is not has direct realistic context, but a self-reference words, and it is a virtual space of the empirical. In this paper, we discuss the related theory with modifi cation that is innovative.

  12. A light writable microfluidic "flash memory": optically addressed actuator array with latched operation for microfluidic applications.

    Science.gov (United States)

    Hua, Zhishan; Pal, Rohit; Srivannavit, Onnop; Burns, Mark A; Gulari, Erdogan

    2008-03-01

    This paper presents a novel optically addressed microactuator array (microfluidic "flash memory") with latched operation. Analogous to the address-data bus mediated memory address protocol in electronics, the microactuator array consists of individual phase-change based actuators addressed by localized heating through focused light patterns (address bus), which can be provided by a modified projector or high power laser pointer. A common pressure manifold (data bus) for the entire array is used to generate large deflections of the phase change actuators in the molten phase. The use of phase change material as the working media enables latched operation of the actuator array. After the initial light "writing" during which the phase is temporarily changed to molten, the actuated status is self-maintained by the solid phase of the actuator without power and pressure inputs. The microfluidic flash memory can be re-configured by a new light illumination pattern and common pressure signal. The proposed approach can achieve actuation of arbitrary units in a large-scale array without the need for complex external equipment such as solenoid valves and electrical modules, which leads to significantly simplified system implementation and compact system size. The proposed work therefore provides a flexible, energy-efficient, and low cost multiplexing solution for microfluidic applications based on physical displacements. As an example, the use of the latched microactuator array as "normally closed" or "normally open" microvalves is demonstrated. The phase-change wax is fully encapsulated and thus immune from contamination issues in fluidic environments.

  13. Germanium nanoparticles grown at different deposition times for memory device applications

    International Nuclear Information System (INIS)

    Mederos, M.; Mestanza, S.N.M.; Lang, R.; Doi, I.; Diniz, J.A.

    2016-01-01

    In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

  14. Germanium nanoparticles grown at different deposition times for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

    2016-07-29

    In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

  15. pH Memory Effects of Tunable Block Copolymer Photonic Gels and Their Applications

    Science.gov (United States)

    Kang, Youngjong; Thomas, Edwin L.

    2007-03-01

    Materials with hysteresis, showing a bistable state to the external stimuli, have been widely investigated due to their potential applications. For example, they could be used as memory devices or optical switches when they have magnetic or optical hysteresis response to the external stimuli. Here we report pH tunable photonic gels which are spontaneously assembled from block copolymers. The general idea of this research is based on the selective swelling of block copolymer lamellar mesogels, where the solubility of one block is responsive to the change of pH. In this system, the domain spacing of the lamellar is varied with the extent of swelling. As a model system, we used protonated polystyrene-b-poly(2-vinly pyridine) (PS-b-P2VP) block copolymers forming lamellar structures. The photonic gel films prepared from protonated PS-b-P2VP show a strong reflectance in aqueous solution and the band position was varied with pH. Interestingly, a very strong optical hysteresis was observed while the reflection band of photonic gels was tuned by changing pH. We anticipate that pH tunable photonic gels with hysteresis can be applicable to novel applications such as a component of memory devices, photonic switches or drug delivery vehicles.

  16. Algorithm for Optimizing Bipolar Interconnection Weights with Applications in Associative Memories and Multitarget Classification

    Science.gov (United States)

    Chang, Shengjiang; Wong, Kwok-Wo; Zhang, Wenwei; Zhang, Yanxin

    1999-08-01

    An algorithm for optimizing a bipolar interconnection weight matrix with the Hopfield network is proposed. The effectiveness of this algorithm is demonstrated by computer simulation and optical implementation. In the optical implementation of the neural network the interconnection weights are biased to yield a nonnegative weight matrix. Moreover, a threshold subchannel is added so that the system can realize, in real time, the bipolar weighted summation in a single channel. Preliminary experimental results obtained from the applications in associative memories and multitarget classification with rotation invariance are shown.

  17. Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application

    Science.gov (United States)

    Ren, Kun; Li, Ruiheng; Chen, Xin; Wang, Yong; Shen, Jiabin; Xia, Mengjiao; Lv, Shilong; Ji, Zhenguo; Song, Zhitang

    2018-02-01

    The nonlinear resistance change and small bit resolution of phase change memory (PCM) under identical operation pulses will limit its performance as a synaptic device. The octahedral Ti-Te units in Ti-Sb-Te, regarded as nucleation seeds, are degenerated when Ti is bonded with O, causing a slower crystallization and a controllable SET process in PCM cells. A linear resistance change under identical pulses, a resolution of ˜8 bits, and an ON/OFF ratio of ˜102 has been achieved in O-Ti-Sb-Te based PCM, showing its potential application as a synaptic device to improve recognition performance of the neural network.

  18. Feasibility study of polyurethane shape-memory polymer actuators for pressure bandage application

    International Nuclear Information System (INIS)

    Ahmad, Manzoor; Luo Jikui; Miraftab, Mohsen

    2012-01-01

    The feasibility of laboratory-synthesized polyurethane-based shape-memory polymer (SMPU) actuators has been investigated for possible application in medical pressure bandages where gradient pressure is required between the ankle and the knee for treatment of leg ulcers. In this study, using heat as the stimulant, SMPU strip actuators have been subjected to gradual and cyclic stresses; their recovery force, reproducibility and reusability have been monitored with respect to changes in temperature and circumference of a model leg, and the stress relaxation at various temperatures has been investigated. The findings suggest that SMPU actuators can be used for the development of the next generation of pressure bandages.

  19. Feasibility study of polyurethane shape-memory polymer actuators for pressure bandage application.

    Science.gov (United States)

    Ahmad, Manzoor; Luo, Jikui; Miraftab, Mohsen

    2012-02-01

    The feasibility of laboratory-synthesized polyurethane-based shape-memory polymer (SMPU) actuators has been investigated for possible application in medical pressure bandages where gradient pressure is required between the ankle and the knee for treatment of leg ulcers. In this study, using heat as the stimulant, SMPU strip actuators have been subjected to gradual and cyclic stresses; their recovery force, reproducibility and reusability have been monitored with respect to changes in temperature and circumference of a model leg, and the stress relaxation at various temperatures has been investigated. The findings suggest that SMPU actuators can be used for the development of the next generation of pressure bandages.

  20. A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

    International Nuclear Information System (INIS)

    Zhang Junyu; Wang Yong; Liu Jing; Zhang Manhong; Xu Zhongguang; Huo Zongliang; Liu Ming

    2012-01-01

    We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory (NVM) applications. By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme, both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor, the 'erased states' can be set to below 0 V, so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified. Good memory cell performance has also been achieved, including a fast program/erase (P/E) speed (a 1.15 V memory window under 10 μs program pulse), an excellent data retention (only 20% charge loss for 10 years). The data shows that the device has strong potential for future embedded NVM applications. (semiconductor devices)

  1. Reprint of: Pendant allyl crosslinking as a tunable shape memory actuator for vascular applications.

    Science.gov (United States)

    Boire, Timothy C; Gupta, Mukesh K; Zachman, Angela L; Lee, Sue Hyun; Balikov, Daniel A; Kim, Kwangho; Bellan, Leon M; Sung, Hak-Joon

    2016-04-01

    Thermo-responsive shape memory polymers (SMPs) can be programmed to fit into small-bore incisions and recover their functional shape upon deployment in the body. This property is of significant interest for developing the next generation of minimally-invasive medical devices. To be used in such applications, SMPs should exhibit adequate mechanical strengths that minimize adverse compliance mismatch-induced host responses (e.g. thrombosis, hyperplasia), be biodegradable, and demonstrate switch-like shape recovery near body temperature with favorable biocompatibility. Combinatorial approaches are essential in optimizing SMP material properties for a particular application. In this study, a new class of thermo-responsive SMPs with pendant, photocrosslinkable allyl groups, x%poly(ε-caprolactone)-co-y%(α-allyl carboxylate ε-caprolactone) (x%PCL-y%ACPCL), are created in a robust, facile manner with readily tunable material properties. Thermomechanical and shape memory properties can be drastically altered through subtle changes in allyl composition. Molecular weight and gel content can also be altered in this combinatorial format to fine-tune material properties. Materials exhibit highly elastic, switch-like shape recovery near 37 °C. Endothelial compatibility is comparable to tissue culture polystyrene (TCPS) and 100%PCL in vitro and vascular compatibility is demonstrated in vivo in a murine model of hindlimb ischemia, indicating promising suitability for vascular applications. With the ongoing thrust to make surgeries minimally-invasive, it is prudent to develop new biomaterials that are highly compatible and effective in this workflow. Thermo-responsive shape memory polymers (SMPs) have great potential for minimally-invasive applications because SMP medical devices (e.g. stents, grafts) can fit into small-bore minimally-invasive surgical devices and recover their functional shape when deployed in the body. To realize their potential, it is imperative to devise

  2. Pendant allyl crosslinking as a tunable shape memory actuator for vascular applications.

    Science.gov (United States)

    Boire, Timothy C; Gupta, Mukesh K; Zachman, Angela L; Lee, Sue Hyun; Balikov, Daniel A; Kim, Kwangho; Bellan, Leon M; Sung, Hak-Joon

    2015-09-01

    Thermo-responsive shape memory polymers (SMPs) can be programmed to fit into small-bore incisions and recover their functional shape upon deployment in the body. This property is of significant interest for developing the next generation of minimally-invasive medical devices. To be used in such applications, SMPs should exhibit adequate mechanical strengths that minimize adverse compliance mismatch-induced host responses (e.g. thrombosis, hyperplasia), be biodegradable, and demonstrate switch-like shape recovery near body temperature with favorable biocompatibility. Combinatorial approaches are essential in optimizing SMP material properties for a particular application. In this study, a new class of thermo-responsive SMPs with pendant, photocrosslinkable allyl groups, x%poly(ε-caprolactone)-co-y%(α-allyl carboxylate ε-caprolactone) (x%PCL-y%ACPCL), are created in a robust, facile manner with readily tunable material properties. Thermomechanical and shape memory properties can be drastically altered through subtle changes in allyl composition. Molecular weight and gel content can also be altered in this combinatorial format to fine-tune material properties. Materials exhibit highly elastic, switch-like shape recovery near 37°C. Endothelial compatibility is comparable to tissue culture polystyrene (TCPS) and 100%PCL in vitro and vascular compatibility is demonstrated in vivo in a murine model of hindlimb ischemia, indicating promising suitability for vascular applications. With the ongoing thrust to make surgeries minimally-invasive, it is prudent to develop new biomaterials that are highly compatible and effective in this workflow. Thermo-responsive shape memory polymers (SMPs) have great potential for minimally-invasive applications because SMP medical devices (e.g. stents, grafts) can fit into small-bore minimally-invasive surgical devices and recover their functional shape when deployed in the body. To realize their potential, it is imperative to devise

  3. Energy Scaling Advantages of Resistive Memory Crossbar Based Computation and its Application to Sparse Coding

    Directory of Open Access Journals (Sweden)

    Sapan eAgarwal

    2016-01-01

    Full Text Available The exponential increase in data over the last decade presents a significant challenge to analytics efforts that seek to process and interpret such data for various applications. Neural-inspired computing approaches are being developed in order to leverage the computational advantages of the analog, low-power data processing observed in biological systems. Analog resistive memory crossbars can perform a parallel read or a vector-matrix multiplication as well as a parallel write or a rank-1 update with high computational efficiency. For an NxN crossbar, these two kernels are at a minimum O(N more energy efficient than a digital memory-based architecture. If the read operation is noise limited, the energy to read a column can be independent of the crossbar size (O(1. These two kernels form the basis of many neuromorphic algorithms such as image, text, and speech recognition. For instance, these kernels can be applied to a neural sparse coding algorithm to give an O(N reduction in energy for the entire algorithm. Sparse coding is a rich problem with a host of applications including computer vision, object tracking, and more generally unsupervised learning.

  4. Near-Field Thermal Radiation for Solar Thermophotovoltaics and High Temperature Thermal Logic and Memory Applications

    Science.gov (United States)

    Elzouka, Mahmoud

    This dissertation investigates Near-Field Thermal Radiation (NFTR) applied to MEMS-based concentrated solar thermophotovoltaics (STPV) energy conversion and thermal memory and logics. NFTR is the exchange of thermal radiation energy at nano/microscale; when separation between the hot and cold objects is less than dominant radiation wavelength (˜1 mum). NFTR is particularly of interest to the above applications due to its high rate of energy transfer, exceeding the blackbody limit by orders of magnitude, and its strong dependence on separation gap size, surface nano/microstructure and material properties. Concentrated STPV system converts solar radiation to electricity using heat as an intermediary through a thermally coupled absorber/emitter, which causes STPV to have one of the highest solar-to-electricity conversion efficiency limits (85.4%). Modeling of a near-field concentrated STPV microsystem is carried out to investigate the use of STPV based solid-state energy conversion as high power density MEMS power generator. Numerical results for In 0.18Ga0.82Sb PV cell illuminated with tungsten emitter showed significant enhancement in energy transfer, resulting in output power densities as high as 60 W/cm2; 30 times higher than the equivalent far-field power density. On thermal computing, this dissertation demonstrates near-field heat transfer enabled high temperature NanoThermoMechanical memory and logics. Unlike electronics, NanoThermoMechanical memory and logic devices use heat instead of electricity to record and process data; hence they can operate in harsh environments where electronics typically fail. NanoThermoMechanical devices achieve memory and thermal rectification functions through the coupling of near-field thermal radiation and thermal expansion in microstructures, resulting in nonlinear heat transfer between two temperature terminals. Numerical modeling of a conceptual NanoThermoMechanical is carried out; results include the dynamic response under

  5. An overview of applications of the mesomechanical approach to shape memory phenomena – completed by a new application to two-way shape memory

    Czech Academy of Sciences Publication Activity Database

    Kafka, Vratislav

    19 2008, č. 1 (2008), s. 3-17 ISSN 1045-389X Institutional research plan: CEZ:AV0Z20710524 Keywords : shape memory * mesomechanics * two-way shape memory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.293, year: 2008

  6. Cognitive memory.

    Science.gov (United States)

    Widrow, Bernard; Aragon, Juan Carlos

    2013-05-01

    Regarding the workings of the human mind, memory and pattern recognition seem to be intertwined. You generally do not have one without the other. Taking inspiration from life experience, a new form of computer memory has been devised. Certain conjectures about human memory are keys to the central idea. The design of a practical and useful "cognitive" memory system is contemplated, a memory system that may also serve as a model for many aspects of human memory. The new memory does not function like a computer memory where specific data is stored in specific numbered registers and retrieval is done by reading the contents of the specified memory register, or done by matching key words as with a document search. Incoming sensory data would be stored at the next available empty memory location, and indeed could be stored redundantly at several empty locations. The stored sensory data would neither have key words nor would it be located in known or specified memory locations. Sensory inputs concerning a single object or subject are stored together as patterns in a single "file folder" or "memory folder". When the contents of the folder are retrieved, sights, sounds, tactile feel, smell, etc., are obtained all at the same time. Retrieval would be initiated by a query or a prompt signal from a current set of sensory inputs or patterns. A search through the memory would be made to locate stored data that correlates with or relates to the prompt input. The search would be done by a retrieval system whose first stage makes use of autoassociative artificial neural networks and whose second stage relies on exhaustive search. Applications of cognitive memory systems have been made to visual aircraft identification, aircraft navigation, and human facial recognition. Concerning human memory, reasons are given why it is unlikely that long-term memory is stored in the synapses of the brain's neural networks. Reasons are given suggesting that long-term memory is stored in DNA or RNA

  7. Application of nanomaterials in two-terminal resistive-switching memory devices

    Directory of Open Access Journals (Sweden)

    Jianyong Ouyang

    2010-05-01

    Full Text Available Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs, nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Dr. Jianyong Ouyang received his bachelor degree from the Tsinghua University in Beijing, China, and MSc from the Institute of Chemistry, Chinese Academy of Science. He received his PhD from the Institute for Molecular

  8. Frequency-controlled wireless shape memory polymer microactuator for drug delivery application.

    Science.gov (United States)

    Zainal, M A; Ahmad, A; Mohamed Ali, M S

    2017-03-01

    This paper reports the wireless Shape-Memory-Polymer actuator operated by external radio frequency magnetic fields and its application in a drug delivery device. The actuator is driven by a frequency-sensitive wireless resonant heater which is bonded directly to the Shape-Memory-Polymer and is activated only when the field frequency is tuned to the resonant frequency of heater. The heater is fabricated using a double-sided Cu-clad Polyimide with much simpler fabrication steps compared to previously reported methods. The actuation range of 140 μm as the tip opening distance is achieved at device temperature 44 °C in 30 s using 0.05 W RF power. A repeatability test shows that the actuator's average maximum displacement is 110 μm and standard deviation of 12 μm. An experiment is conducted to demonstrate drug release with 5 μL of an acidic solution loaded in the reservoir and the device is immersed in DI water. The actuator is successfully operated in water through wireless activation. The acidic solution is released and diffused in water with an average release rate of 0.172 μL/min.

  9. Self-organized titanium oxide nano-channels for resistive memory application

    Energy Technology Data Exchange (ETDEWEB)

    Barman, A.; Saini, C. P.; Dhar, S.; Kanjilal, A., E-mail: aloke.kanjilal@snu.edu.in [Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201 314 (India); Sarkar, P. [Department of Physics, National Institute of Technology, Silchar, Assam 788 010 (India); Satpati, B.; Bhattacharyya, S. R. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kabiraj, D.; Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

    2015-12-14

    Towards developing next generation scalable TiO{sub 2}-based resistive switching (RS) memory devices, the efficacy of 50 keV Ar{sup +}-ion irradiation to achieve self-organized nano-channel based structures at a threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} at ambient temperature is presented. Although x-ray diffraction results suggest the amorphization of as-grown TiO{sub 2} layers, detailed transmission electron microscopy study reveals fluence-dependent evolution of voids and eventual formation of self-organized nano-channels between them. Moreover, gradual increase of TiO/Ti{sub 2}O{sub 3} in the near surface region, as monitored by x-ray photoelectron spectroscopy, establishes the upsurge in oxygen deficient centers. The impact of structural and chemical modification on local RS behavior has also been investigated by current-voltage measurements in conductive atomic force microscopy, while memory application is manifested by fabricating Pt/TiO{sub 2}/Pt/Ti/SiO{sub 2}/Si devices. Finally, the underlying mechanism of our experimental results has been analyzed and discussed in the light of oxygen vacancy migration through nano-channels.

  10. Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

    Science.gov (United States)

    Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

    2017-11-01

    A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

  11. The application of shape memory actuators in anthropomorphic upper limb prostheses.

    Science.gov (United States)

    dos Santos, Christian Mariani Lucas; da Cunha, Fransergio Leite; Dynnikov, Vladimir Ivanovitch

    2003-05-01

    In recent years, single crystal Cu-Al-Ni alloys with shape memory behavior (SMB) became generally commercialized. They achieved the level of extended application, including upper limb human prosthesis with anthropomorphic characteristics. An actuator based in single crystal Cu-Al-Ni alloy was tested as a prototype for prosthetic actuators. Their thermal cycle times remarkably define the actuator dynamics and the idea of preheating to reduce its response time was tested. To elaborate the heating conditions, the chemical composition of martensitic and austenitic single crystals, Cu-Al-Ni alloy samples were examined. The dynamic response of a martensitic actuator made with SMB and the power consumed with preheating was analyzed. It demonstrates that the presence of more elements in alloys may be fundamental to displace the heating diagram and to reduce the power consumed.

  12. Plasma Doping - Enabling Technology for High Dose Logic and Memory Applications

    International Nuclear Information System (INIS)

    Miller, T.; Godet, L.; Papasouliotis, G. D.; Singh, V.

    2008-01-01

    As logic and memory device dimensions shrink with each generation, there are more high dose implants at lower energies. Examples include dual poly gate (also referred to as counter-doped poly), elevated source drain and contact plug implants. Plasma Doping technology throughput and dopant profile benefits at these ultra high dose and lower energy conditions have been well established [1,2,3]. For the first time a production-worthy plasma doping implanter, the VIISta PLAD tool, has been developed with unique architecture suited for precise and repeatable dopant placement. Critical elements of the architecture include pulsed DC wafer bias, closed-loop dosimetry and a uniform low energy, high density plasma source. In this paper key performance metrics such as dose uniformity, dose repeatability and dopant profile control will be presented that demonstrate the production-worthiness of the VIISta PLAD tool for several high dose applications.

  13. Variable stiffness corrugated composite structure with shape memory polymer for morphing skin applications

    Science.gov (United States)

    Gong, Xiaobo; Liu, Liwu; Scarpa, Fabrizio; Leng, Jinsong; Liu, Yanju

    2017-03-01

    This work presents a variable stiffness corrugated structure based on a shape memory polymer (SMP) composite with corrugated laminates as reinforcement that shows smooth aerodynamic surface, extreme mechanical anisotropy and variable stiffness for potential morphing skin applications. The smart composite corrugated structure shows a low in-plane stiffness to minimize the actuation energy, but also possess high out-of-plane stiffness to transfer the aerodynamic pressure load. The skin provides an external smooth aerodynamic surface because of the one-sided filling with the SMP. Due to variable stiffness of the shape memory polymer the morphing skin exhibits a variable stiffness with a change of temperature, which can help the skin adjust its stiffness according different service environments and also lock the temporary shape without external force. Analytical models related to the transverse and bending stiffness are derived and validated using finite element techniques. The stiffness of the morphing skin is further investigated by performing a parametric analysis against the geometry of the corrugation and various sets of SMP fillers. The theoretical and numerical models show a good agreement and demonstrate the potential of this morphing skin concept for morphing aircraft applications. We also perform a feasibility study of the use of this morphing skin in a variable camber morphing wing baseline. The results show that the morphing skin concept exhibits sufficient bending stiffness to withstand the aerodynamic load at low speed (less than 0.3 Ma), while demonstrating a large transverse stiffness variation (up to 191 times) that helps to create a maximum mechanical efficiency of the structure under varying external conditions.

  14. Collaboration Expertise in Medicine - No Evidence for Cross-Domain Application from a Memory Retrieval Study.

    Directory of Open Access Journals (Sweden)

    Jan Kiesewetter

    Full Text Available Is there evidence for expertise on collaboration and, if so, is there evidence for cross-domain application? Recall of stimuli was used to measure so-called internal collaboration scripts of novices and experts in two studies. Internal collaboration scripts refer to an individual's knowledge about how to interact with others in a social situation. METHOD—Ten collaboration experts and ten novices of the content domain social science were presented with four pictures of people involved in collaborative activities. The recall texts were coded, distinguishing between superficial and collaboration script information. RESULTS—Experts recalled significantly more collaboration script information (M = 25.20; SD = 5.88 than did novices (M = 13.80; SD = 4.47. Differences in superficial information were not found.Study 2 tested whether the differences found in Study 1 could be replicated. Furthermore, the cross-domain application of internal collaboration scripts was explored. METHOD—Twenty collaboration experts and 20 novices of the content domain medicine were presented with four pictures and four videos of their content domain and a video and picture of another content domain. All stimuli showed collaborative activities typical for the respective content domains. RESULTS—As in Study 1, experts recalled significantly more collaboration script information of their content domain (M = 71.65; SD = 33.23 than did novices (M = 54.25; SD = 15.01. For the novices, no differences were found for the superficial information nor for the retrieval of collaboration script information recalled after the other content domain stimuli.There is evidence for expertise on collaboration in memory tasks. The results show that experts hold substantially more collaboration script information than did novices. Furthermore, the differences between collaboration novices and collaboration experts occurred only in their own content domain, indicating that internal

  15. Collaboration Expertise in Medicine - No Evidence for Cross-Domain Application from a Memory Retrieval Study.

    Science.gov (United States)

    Kiesewetter, Jan; Fischer, Frank; Fischer, Martin R

    2016-01-01

    Is there evidence for expertise on collaboration and, if so, is there evidence for cross-domain application? Recall of stimuli was used to measure so-called internal collaboration scripts of novices and experts in two studies. Internal collaboration scripts refer to an individual's knowledge about how to interact with others in a social situation. METHOD— Ten collaboration experts and ten novices of the content domain social science were presented with four pictures of people involved in collaborative activities. The recall texts were coded, distinguishing between superficial and collaboration script information. RESULTS— Experts recalled significantly more collaboration script information (M = 25.20; SD = 5.88) than did novices (M = 13.80; SD = 4.47). Differences in superficial information were not found. Study 2 tested whether the differences found in Study 1 could be replicated. Furthermore, the cross-domain application of internal collaboration scripts was explored. METHOD— Twenty collaboration experts and 20 novices of the content domain medicine were presented with four pictures and four videos of their content domain and a video and picture of another content domain. All stimuli showed collaborative activities typical for the respective content domains. RESULTS— As in Study 1, experts recalled significantly more collaboration script information of their content domain (M = 71.65; SD = 33.23) than did novices (M = 54.25; SD = 15.01). For the novices, no differences were found for the superficial information nor for the retrieval of collaboration script information recalled after the other content domain stimuli. There is evidence for expertise on collaboration in memory tasks. The results show that experts hold substantially more collaboration script information than did novices. Furthermore, the differences between collaboration novices and collaboration experts occurred only in their own content domain, indicating that internal collaboration scripts

  16. Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

    Science.gov (United States)

    He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

    2017-11-01

    The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

  17. An Introduction to a Porous Shape Memory Alloy Dynamic Data Driven Application System

    KAUST Repository

    Douglas, Craig C.

    2012-06-02

    Shape Memory Alloys are capable of changing their crystallographic structure due to changes of temperature and/or stress. Our research focuses on three points: (1) Iterative Homogenization of Porous SMAs: Development of a Multiscale Model of porous SMAs utilizing iterative homogenization and based on existing knowledge of constitutive modeling of polycrystalline SMAs. (2) DDDAS: Develop tools to turn on and off the sensors and heating unit(s), to monitor on-line data streams, to change scales based on incoming data, and to control what type of data is generated. The application must have the capability to be run and steered remotely. (3) Modeling and applications of porous SMA: Vibration isolation devices with SMA and porous SMA components for aerospace applications will be analyzed and tested. Numerical tools for modeling porous SMAs with a second viscous phase will be developed.The outcome will be a robust, three-dimensional, multiscale model of porous SMA that can be used in complicated, real-life structural analysis of SMA components using a DDDAS framework.

  18. Executive and memory correlates of age-related differences in wayfinding performances using a virtual reality application.

    Science.gov (United States)

    Taillade, Mathieu; Sauzéon, Hélène; Dejos, Marie; Pala, Prashant Arvind; Larrue, Florian; Wallet, Grégory; Gross, Christian; N'Kaoua, Bernard

    2013-01-01

    The aim of this study was to evaluate in large-scale spaces wayfinding and spatial learning difficulties for older adults in relation to the executive and memory decline associated with aging. We compared virtual reality (VR)-based wayfinding and spatial memory performances between young and older adults. Wayfinding and spatial memory performances were correlated with classical measures of executive and visuo-spatial memory functions, but also with self-reported estimates of wayfinding difficulties. We obtained a significant effect of age on wayfinding performances but not on spatial memory performances. The overall correlations showed significant correlations between the wayfinding performances and the classical measures of both executive and visuo-spatial memory, but only when the age factor was not partialled out. Also, older adults underestimated their wayfinding difficulties. A significant relationship between the wayfinding performances and self-reported wayfinding difficulty estimates is found, but only when the age effect was partialled out. These results show that, even when older adults have an equivalent spatial knowledge to young adults, they had greater difficulties with the wayfinding task, supporting an executive decline view in age-related wayfinding difficulties. However, the correlation results are in favor of both the memory and executive decline views as mediators of age-related differences in wayfinding performances. This is discussed in terms of the relationships between memory and executive functioning in wayfinding task orchestration. Our results also favor the use of objective assessments of everyday navigation difficulties in virtual applications, instead of self-reported questionnaires, since older adults showed difficulties in estimating their everyday wayfinding problems.

  19. Task-FIFO co-scheduling of streaming applications on MPSoCs with predictable memory hierarchy

    NARCIS (Netherlands)

    Tang, Q.; Basten, A.A.; Geilen, M.C.W.; Stuijk, S.; Wei, Ji-Bo

    This article studies the scheduling of real-time streaming applications on multiprocessor systems-on-chips with predictable memory hierarchy. An iteration-based task-FIFO co-scheduling framework is proposed for this problem. We obtain FIFO size distributions using Pareto space searching, based on

  20. Task-FIFO co-scheduling of streaming applications on MPSoCs with predictable memory hierarchy

    NARCIS (Netherlands)

    Tang, Q.; Basten, T.; Geilen, M.; Stuijk, S.; Wei, J.B.

    2017-01-01

    This article studies the scheduling of real-time streaming applications on multiprocessor systems-on-chips with predictable memory hierarchy. An iteration-based task-FIFO co-scheduling framework is proposed for this problem. We obtain FIFO size distributions using Pareto space searching, based on

  1. Elucidation and Optimization of Resistive Random Access Memory Switching Behavior for Advanced Computing Applications

    Science.gov (United States)

    Alamgir, Zahiruddin

    RRAM has recently emerged as a strong candidate for non-volatile memory (NVM). Beyond memory applications, RRAM holds promise for use in performing logic functions, mimicking neuromorphic activities, enabling multi-level switching, and as one of the key elements of hardware based encryption or signal processing systems. It has been shown previously that RRAM resistance levels can be changed by adjusting compliance current or voltage level. This characteristic makes RRAM suitable for use in setting the synaptic weight in neuromorphic computing circuits. RRAM is also considered as a key element in hardware encryption systems, to produce unique and reproducible signals. However, a key challenge to implement RRAM in these applications is significant cycle to cycle performance variability. We sought to develop RRAM that can be tuned to different resistance levels gradually, with high reliability, and low variability. To achieve this goal, we focused on elucidating the conduction mechanisms underlying the resistive switching behavior for these devices. Electrical conduction mechanisms were determined by curve fitting I-V data using different current conduction equations. Temperature studies were also performed to corroborate these data. It was found that Schottky barrier height and width modulation was one of the key parameters that could be tuned to achieve different resistance levels, and for switching resistance states, primarily via oxygen vacancy movement. Oxygen exchange layers with different electronegativity were placed between top electrode and the oxide layer of TaOx devices to determine the effect of oxygen vacancy concentrations and gradients in these devices. It was found that devices with OELs with lower electronegativity tend to yield greater separation in the OFF vs. ON state resistance levels. As an extension of this work, TaOx based RRAM with Hf as the OEL was fabricated and could be tuned to different resistance level using pulse width and height

  2. A memory efficient user interface for CLIPS micro-computer applications

    Science.gov (United States)

    Sterle, Mark E.; Mayer, Richard J.; Jordan, Janice A.; Brodale, Howard N.; Lin, Min-Jin

    1990-01-01

    The goal of the Integrated Southern Pine Beetle Expert System (ISPBEX) is to provide expert level knowledge concerning treatment advice that is convenient and easy to use for Forest Service personnel. ISPBEX was developed in CLIPS and delivered on an IBM PC AT class micro-computer, operating with an MS/DOS operating system. This restricted the size of the run time system to 640K. In order to provide a robust expert system, with on-line explanation, help, and alternative actions menus, as well as features that allow the user to back up or execute 'what if' scenarios, a memory efficient menuing system was developed to interface with the CLIPS programs. By robust, we mean an expert system that (1) is user friendly, (2) provides reasonable solutions for a wide variety of domain specific problems, (3) explains why some solutions were suggested but others were not, and (4) provides technical information relating to the problem solution. Several advantages were gained by using this type of user interface (UI). First, by storing the menus on the hard disk (instead of main memory) during program execution, a more robust system could be implemented. Second, since the menus were built rapidly, development time was reduced. Third, the user may try a new scenario by backing up to any of the input screens and revising segments of the original input without having to retype all the information. And fourth, asserting facts from the menus provided for a dynamic and flexible fact base. This UI technology has been applied successfully in expert systems applications in forest management, agriculture, and manufacturing. This paper discusses the architecture of the UI system, human factors considerations, and the menu syntax design.

  3. Investigations of binary and ternary phase change alloys for future memory applications

    International Nuclear Information System (INIS)

    Rausch, Pascal

    2012-01-01

    The understanding of phase change materials is of great importance because it enables us to predict properties and tailor alloys which might be even better suitable to tackle challenges of future memory applications. Within this thesis two topics have been approached: on the one hand the understanding of the alloy In 3 Sb 1 Te 2 and on the other hand the so called resistivity drift of amorphous Ge-Sn-Te phase change materials. The main topic covers an in depth discussion of the ternary alloy In 3 Sb 1 Te 2 . At first glance, this alloy does not fit into the established concepts of phase alloys: e.g. the existence of resonant bonding in the crystalline phase is not obvious and the number of p-electrons is very low compared to other phase change alloys. Furthermore amorphous phase change alloys with high indium content are usually not discussed in literature, an exception being the recent work by Spreafico et al. on InGeTe 2 . For the first time a complete description of In 3 Sb 1 Te 2 alloy is given in this work for the crystalline phase, amorphous phase and crystallization process. In addition comparisons are drawn to typical phase change materials like Ge 2 Sb 2 Te 5 /GeTe or prototype systems like AgInTe 2 and InTe. The second topic of this thesis deals with the issue of resistivity drift, i.e. the increase of resistivity of amorphous phase change alloys with aging. This drift effect greatly hampers the introduction of multilevel phase change memory devices into the market. Recently a systematic decrease of drift coefficient with stoichiometry has been observed in our group going from GeTe over Ge 3 Sn 1 Te 4 to Ge 2 Sn 2 Te 4 . These alloys are investigated with respect to constraint theory.

  4. Efficient development of memory bounded geo-applications to scale on modern supercomputers

    Science.gov (United States)

    Räss, Ludovic; Omlin, Samuel; Licul, Aleksandar; Podladchikov, Yuri; Herman, Frédéric

    2016-04-01

    Numerical modeling is an actual key tool in the area of geosciences. The current challenge is to solve problems that are multi-physics and for which the length scale and the place of occurrence might not be known in advance. Also, the spatial extend of the investigated domain might strongly vary in size, ranging from millimeters for reactive transport to kilometers for glacier erosion dynamics. An efficient way to proceed is to develop simple but robust algorithms that perform well and scale on modern supercomputers and permit therefore very high-resolution simulations. We propose an efficient approach to solve memory bounded real-world applications on modern supercomputers architectures. We optimize the software to run on our newly acquired state-of-the-art GPU cluster "octopus". Our approach shows promising preliminary results on important geodynamical and geomechanical problematics: we have developed a Stokes solver for glacier flow and a poromechanical solver including complex rheologies for nonlinear waves in stressed rocks porous rocks. We solve the system of partial differential equations on a regular Cartesian grid and use an iterative finite difference scheme with preconditioning of the residuals. The MPI communication happens only locally (point-to-point); this method is known to scale linearly by construction. The "octopus" GPU cluster, which we use for the computations, has been designed to achieve maximal data transfer throughput at minimal hardware cost. It is composed of twenty compute nodes, each hosting four Nvidia Titan X GPU accelerators. These high-density nodes are interconnected with a parallel (dual-rail) FDR InfiniBand network. Our efforts show promising preliminary results for the different physics investigated. The glacier flow solver achieves good accuracy in the relevant benchmarks and the coupled poromechanical solver permits to explain previously unresolvable focused fluid flow as a natural outcome of the porosity setup. In both cases

  5. Shape memory polymer nanocomposites for application of multiple-field active disassembly: experiment and simulation.

    Science.gov (United States)

    Carrell, John; Zhang, Hong-Chao; Wang, Shiren; Tate, Derrick

    2013-11-19

    Active disassembly (AD) uses innovative materials that can perform a designed disassembly action by the application of an external field. AD provides improvements over current disassembly processes by limiting machine or manual labor and enabling batch processing for end-of-life products. With improved disassembly operations, more reuse of components and purer recycling streams may be seen. One problem with AD, however, has been with the single-field actuation because of the probability of accidental disassembly. This presentation will discuss the application of shape memory polymer (SMP) nanocomposites in a new AD process. This novel AD process requires multiple-field actuation of the SMP nanocomposite fastener. In the analysis of this AD process, thermal and magnetic field tests were performed on the SMP nanocomposite. From these tests, finite-element analysis was performed to model and simulate the multiple-field AD process. The results of the simulations provide performance variables for the AD process and show a better performance time for the SMP nanocomposite fastener than for a comparable SMP fastener.

  6. Shape memory polymers and their composites in aerospace applications: a review

    International Nuclear Information System (INIS)

    Liu, Yanju; Du, Haiyang; Liu, Liwu; Leng, Jinsong

    2014-01-01

    As a new class of smart materials, shape memory polymers and their composites (SMPs and SMPCs) can respond to specific external stimulus and remember the original shape. There are many types of stimulus methods to actuate the deformation of SMPs and SMPCs, of which the thermal- and electro-responsive components and structures are common. In this review, the general mechanism of SMPs and SMPCs are first introduced, the stimulus methods are then discussed to demonstrate the shape recovery effect, and finally, the applications of SMPs and SMPCs that are reinforced with fiber materials in aerospace are reviewed. SMPC hinges and booms are discussed in the part on components; the booms can be divided again into foldable SMPC truss booms, coilable SMPC truss booms and storable tubular extendible member (STEM) booms. In terms of SMPC structures, the solar array and deployable panel, reflector antenna and morphing wing are introduced in detail. Considering the factors of weight, recovery force and shock effect, SMPCs are expected to have great potential applications in aerospace. (topical review)

  7. Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.

    Science.gov (United States)

    Chen, Xin; Zheng, Yonghui; Zhu, Min; Ren, Kun; Wang, Yong; Li, Tao; Liu, Guangyu; Guo, Tianqi; Wu, Lei; Liu, Xianqiang; Cheng, Yan; Song, Zhitang

    2018-05-01

    Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb 2 Te alloy. Sc 0.1 Sb 2 Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb 2 Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.

  8. Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

  9. Analysis on applicable error-correcting code strength of storage class memory and NAND flash in hybrid storage

    Science.gov (United States)

    Matsui, Chihiro; Kinoshita, Reika; Takeuchi, Ken

    2018-04-01

    A hybrid of storage class memory (SCM) and NAND flash is a promising technology for high performance storage. Error correction is inevitable on SCM and NAND flash because their bit error rate (BER) increases with write/erase (W/E) cycles, data retention, and program/read disturb. In addition, scaling and multi-level cell technologies increase BER. However, error-correcting code (ECC) degrades storage performance because of extra memory reading and encoding/decoding time. Therefore, applicable ECC strength of SCM and NAND flash is evaluated independently by fixing ECC strength of one memory in the hybrid storage. As a result, weak BCH ECC with small correctable bit is recommended for the hybrid storage with large SCM capacity because SCM is accessed frequently. In contrast, strong and long-latency LDPC ECC can be applied to NAND flash in the hybrid storage with large SCM capacity because large-capacity SCM improves the storage performance.

  10. Phase transformation, oxidation and shape memory properties of Ti–50Au–10Zr alloy for high temperature applications

    International Nuclear Information System (INIS)

    Wadood, A.; Hosoda, H.; Yamabe-Mitarai, Y.

    2014-01-01

    Highlights: • Ti–50Au–10Zr exhibited better thermo-mechanical and shape memory properties than Ti–50Au. • Improvement was related to solid solution and precipitation strengthening. • No oxidation problem as oxidation was observed at 100 K higher than A f . • TMA was used not only for thermo-mechanical but also for shape memory and oxidation. - Abstract: In this study, we investigated the phase transformation, oxidation and high temperature mechanical and shape memory properties of Ti–50Au–10Zr (all compositions in atomic%) alloy. Thermo-mechanical analyzer (TMA) was used not only for phase transformation but also for the measurement of shape memory effect and oxidation behavior in air environment. Ti–50Au–10Zr exhibited lower martensitic transformation temperature of 758 K than TiAu stoichiometric alloy exhibiting 870 K since Zr addition stabilizes B2 parent phase. Oxidation was initiated at 873 K that was about 100 K higher than the austenite finish temperature, indicating no such oxidation problems for practical use. Shape memory effect was improved by partial substitution of Ti with Zr in Ti–50Au–10Zr alloy. Compression test of Ti–50Au–10Zr revealed high compressive strength of 1239 MPa of martensite at 691 K (=M f − 50 K) and 924 MPa of B2 parent phase at 834 K (=A f + 50 K) in comparison with Ti–50Au. It is concluded that Zr is effective to improve the mechanical and shape memory properties of TiAu alloy, and that Ti–50Au–10Zr shape memory alloy has potential for high temperature (∼650–850 K) practical applications

  11. A 32-bit computer for large memory applications on the FASTBUS

    International Nuclear Information System (INIS)

    Kellner, R.; Blossom, J.M.; Hung, J.P.

    1985-01-01

    A FASTBUS based 32-bit computer is being built at Los Alamos National Laboratory for use in systems requiring large fast memory in the FASTBUS environment. A separate local execution bus allows data reduction to proceed concurrently with other FASTBUS operations. The computer, which can operate in either master or slave mode, includes the National Semiconductor NS32032 chip set with demand paged memory management, floating point slave processor, interrupt control unit, timers, and time-of-day clock. The 16.0 megabytes of random access memory are interleaved to allow windowed direct memory access on and off the FASTBUS at 80 megabytes per second

  12. Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, Sachin M.; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

    2014-12-07

    Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.

  13. Light sensitivity of a one transistor-one capacitor memory cell when used as a micromirror actuator in projector applications

    Science.gov (United States)

    Huffman, James Douglas

    2001-11-01

    The most important issue facing the future business success of the Digital Micromirror Device or DMD™ produced by Texas Instruments is the cost of the actual device. As the business and consumer markets call for higher resolution displays, the array size will have to be increased to incorporate more pixels. The manufacturing costs associated with building these higher resolution displays follow an exponential relation with the number of pixels due to yield loss and reduced number of chips per silicon wafer. Each pixel is actuated by electrostatics that are provided by a memory cell that is built in the underlying silicon substrate. One way to decrease cost of the wafer is to change the memory cell architecture from a static random access configuration or SRAM to a dynamic random access configuration or DRAM. This change has the benefits of having fewer components per area and a lower metal density. This reduction in the component count and metal density has a dramatic effect on the yield of the memory array by reducing the particle sensitivity of the underlying cell. The main drawback to using a DRAM configuration in a display application is the light sensitivity of a charge storage device built in the silicon substrate. As the photons pass through the mechanical micromirrors and illuminate the DRAM cell, the effective electrostatic potential of the memory element used for the mirror actuation is reduced. This dissertation outlines the issues associated with the light sensitivity of a DRAM memory cell as the actuation element for a micromirror. The concept of charge depletion on a silicon capacitor due to recombination of photogenerated carriers is explored and experimentally verified. The effects of the reduced potential on the capacitor on the micromirror are also explored. Optical modeling is used to determine the incoming photon flux to determine the benefits of adding a charge recombination region as part of the DRAM memory cell. Several options are explored

  14. Biomedical engineering in design and application of nitinol stents with shape memory effect

    Science.gov (United States)

    Ryklina, E. P.; Khmelevskaya, I. Y.; Morozova, Tamara V.; Prokoshkin, S. D.

    1996-04-01

    Our studies in the field of endosurgery in collaboration with the physicians of the National Research Center of Surgery of the Academy of Medical Sciences are carried out beginning in 1983. These studies laid the foundation for the new direction of X-ray surgery--X-ray Nitinol stenting of vessels and tubular structures. X-ray nitinol stents are unique self-fixing shells based on the shape memory effect and superelasticity of nickel-titanium alloys self- reconstructed under human body temperature. Applied for stenting of arteries in cases of stenosis etc., bile ducts in cases of benign and malignant stenoses, digestive tract in cases of oesophageal cancer and cervical canal uterus in cases of postsurgical atresiss and strictures of uterine. The purpose of stenting is restoration of the shape of artery or tubular structure by a cylinder frame formation. The especially elaborated original method of stenting allows to avoid the traditional surgical operation, i.e. the stenting is performed without blood, narcosis and surgical knife. The stent to be implanted is transported into the affected zone through the puncture under the X-ray control. Clinical applications of X-ray endovascular stenting has been started in March 1984. During this period nearly 400 operations on stenting have been performed on femoral, iliac, brachio-cephalic, subclavian arteries, bile ducts, tracheas, digestive tract and cervical canal uterus.

  15. Facile 3D Metal Electrode Fabrication for Energy Applications via Inkjet Printing and Shape Memory Polymer

    International Nuclear Information System (INIS)

    Roberts, R C; Wu, J; Li, D C; Hau, N Y; Chang, Y H; Feng, S P

    2014-01-01

    This paper reports on a simple 3D metal electrode fabrication technique via inkjet printing onto a thermally contracting shape memory polymer (SMP) substrate. Inkjet printing allows for the direct patterning of structures from metal nanoparticle bearing liquid inks. After deposition, these inks require thermal curing steps to render a stable conductive film. By printing onto a SMP substrate, the metal nanoparticle ink can be cured and substrate shrunk simultaneously to create 3D metal microstructures, forming a large surface area topology well suited for energy applications. Polystyrene SMP shrinkage was characterized in a laboratory oven from 150-240°C, resulting in a size reduction of 1.97-2.58. Silver nanoparticle ink was patterned into electrodes, shrunk, and the topology characterized using scanning electron microscopy. Zinc-Silver Oxide microbatteries were fabricated to demonstrate the 3D electrodes compared to planar references. Characterization was performed using 10M potassium hydroxide electrolyte solution doped with zinc oxide (57g/L). After a 300s oxidation at 3Vdc, the 3D electrode battery demonstrated a 125% increased capacity over the reference cell. Reference cells degraded with longer oxidations, but the 3D electrodes were fully oxidized for 4 hours, and exhibited a capacity of 5.5mA-hr/cm 2 with stable metal performance

  16. Al203 thin films on Silicon and Germanium substrates for CMOS and flash memory applications

    Science.gov (United States)

    Gopalan, Sundararaman; Dutta, Shibesh; Ramesh, Sivaramakrishnan; Prathapan, Ragesh; Sreehari G., S.

    2017-07-01

    As scaling of device dimensions has continued, it has become necessary to replace traditional SiO2 with high dielectric constant materials in the conventional CMOS devices. In addition, use of metal gate electrodes and Germanium substrates may have to be used in order to address leakage and mobility issues. Al2O3 is one of the potential candidates both for CMOS and as a blocking dielectric for Flash memory applications owing to its low leakage. In this study, the effects of sputtering conditions and post-deposition annealing conditions on the electrical and reliability characteristics of MOS capacitors using Al2O3 films on Si and Ge substrates with Aluminium gate electrodes have been presented. It was observed that higher sputtering power resulted in larger flat-band voltage (Vfb) shifts, more hysteresis, higher interface state density (Dit) and a poorer reliability. Wit was also found that while a short duration high temperature annealing improves film characteristics, a long duration anneal even at 800C was found to be detrimental to MOS characteristics. Finally, the electronic conduction mechanism in Al2O3 films was also studied. It was observed that the conduction mechanism varied depending on the annealing condition, thickness of film and electric field.

  17. Applicability of Shape Memory Alloy Wire for an Active, Soft Orthotic

    Science.gov (United States)

    Stirling, Leia; Yu, Chih-Han; Miller, Jason; Hawkes, Elliot; Wood, Robert; Goldfield, Eugene; Nagpal, Radhika

    2011-07-01

    Current treatments for gait pathologies associated with neuromuscular disorders may employ a passive, rigid brace. While these provide certain benefits, they can also cause muscle atrophy. In this study, we examined NiTi shape memory alloy (SMA) wires that were annealed into springs to develop an active, soft orthotic (ASO) for the knee. Actively controlled SMA springs may provide variable assistances depending on factors such as when, during the gait cycle, the springs are activated; ongoing muscle activity level; and needs of the wearer. Unlike a passive brace, an active orthotic may provide individualized control, assisting the muscles so that they may be used more appropriately, and possibly leading to a re-education of the neuro-motor system and eventual independence from the orthotic system. A prototype was tested on a suspended, robotic leg to simulate the swing phase of a typical gait. The total deflection generated by the orthotic depended on the knee angle and the total number of actuators triggered, with a max deflection of 35°. While SMA wires have a high energy density, they require a significant amount of power. Furthermore, the loaded SMA spring response times were much longer than the natural frequency of an average gait for the power conditions tested. While the SMA wires are not appropriate for correction of gait pathologies as currently implemented, the ability to have a soft, actuated material could be appropriate for slower timescale applications.

  18. A 4-kbit low-cost antifuse one-time programmable memory macro for embedded applications

    International Nuclear Information System (INIS)

    Li Xian; Zhong Huicai; Jia Cheng; Li Xin

    2014-01-01

    A 4-kbit low-cost one-time programmable (OTP) memory macro for embedded applications is designed and implemented in a 0.18-μm standard CMOS process. The area of the proposed 1.5 transistor (1.5T) OTP cell is 2.13 μm 2 , which is a 49.3% size reduction compared to the previously reported cells. The 1.5T cell is fabricated and measured and shows a large programming window without any disturbance. A novel high voltage switch (HVSW) circuit is also proposed to make sure the OTP macro, implemented in a standard CMOS process, works reliably with the high program voltage. The OTP macro is embedded in negative radio frequency identification (RFID) tags. The full chip size, including the analog front-end, digital controller and the 4-kbit OTP macro, is 600 × 600 μm 2 . The 4-kbit OTP macro only consumes 200 × 260 μm 2 . The measurement shows a 100% program yield by adjusting the program time and has obvious advantages in the core area and power consumption compared to the reported 3T and 2T OTP cores. (semiconductor integrated circuits)

  19. Powder Metallurgy Fabrication of Porous 51(at.%)Ni-Ti Shape Memory Alloys for Biomedical Applications

    Science.gov (United States)

    Ibrahim, Mustafa K.; Hamzah, E.; Saud, Safaa N.; Nazim, E. M.

    2018-05-01

    The effect of time and temperature on the microwave sintering of 51(at.%)Ni-Ti shape memory alloys (SMAs) was investigated in the current research. Furthermore, the microstructure, mechanical properties, and bio-corrosion properties were analyzed based on the sintering conditions. The results revealed that the sintering condition of 700 °C for 15 min produced a part with coherent surface survey that does not exhibit gross defects. Increasing the sintering time and temperature created defects on the outer surface, while reducing the temperature to 550 °C severely affected the mechanical properties. The microstructure of these samples showed two regions of Ni-rich region and Ti-rich region between them Ti2Ni, NiTi, and Ni3Ti phases. The differential scanning calorimeter (DSC) curves of Ni-Ti samples exhibited a multi-step phase transformation B19'-R-B2 during heating and cooling. An increase in the sintering temperature from 550 to 700 °C was found to increase the fracture strength significantly and decreased the fracture strain slightly. Reducing the sintering temperature from 700 to 550 °C severely affected the corrosion behaviors of 51%Ni-Ti SMAs. This research aims to select the optimum parameters to produce Ni-Ti alloys with desired microstructure, mechanical properties, and corrosion behaviors for biomedical applications.

  20. Current-driven domain wall motion based memory devices: Application to a ratchet ferromagnetic strip

    Science.gov (United States)

    Sánchez-Tejerina, Luis; Martínez, Eduardo; Raposo, Víctor; Alejos, Óscar

    2018-04-01

    Ratchet memories, where perpendicular magnetocristalline anisotropy is tailored so as to precisely control the magnetic transitions, has been recently proven to be a feasible device to store and manipulate data bits. For such devices, it has been shown that the current-driven regime of domain walls can improve their performances with respect to the field-driven one. However, the relaxing time required by the traveling domain walls constitutes a certain drawback if the former regime is considered, since it results in longer device latencies. In order to speed up the bit shifting procedure, it is demonstrated here that the application of a current of inverse polarity during the DW relaxing time may reduce such latencies. The reverse current must be sufficiently high as to drive the DW to the equilibrium position faster than the anisotropy slope itself, but with an amplitude sufficiently low as to avoid DW backward shifting. Alternatively, it is possible to use such a reverse current to increase the proper range of operation for a given relaxing time, i.e., the pair of values of the current amplitude and pulse time that ensures single DW jumps for a certain latency time.

  1. Is residual memory variance a valid method for quantifying cognitive reserve? A longitudinal application

    Science.gov (United States)

    Zahodne, Laura B.; Manly, Jennifer J.; Brickman, Adam M.; Narkhede, Atul; Griffith, Erica Y.; Guzman, Vanessa A.; Schupf, Nicole; Stern, Yaakov

    2016-01-01

    Cognitive reserve describes the mismatch between brain integrity and cognitive performance. Older adults with high cognitive reserve are more resilient to age-related brain pathology. Traditionally, cognitive reserve is indexed indirectly via static proxy variables (e.g., years of education). More recently, cross-sectional studies have suggested that reserve can be expressed as residual variance in episodic memory performance that remains after accounting for demographic factors and brain pathology (whole brain, hippocampal, and white matter hyperintensity volumes). The present study extends these methods to a longitudinal framework in a community-based cohort of 244 older adults who underwent two comprehensive neuropsychological and structural magnetic resonance imaging sessions over 4.6 years. On average, residual memory variance decreased over time, consistent with the idea that cognitive reserve is depleted over time. Individual differences in change in residual memory variance predicted incident dementia, independent of baseline residual memory variance. Multiple-group latent difference score models revealed tighter coupling between brain and language changes among individuals with decreasing residual memory variance. These results suggest that changes in residual memory variance may capture a dynamic aspect of cognitive reserve and could be a useful way to summarize individual cognitive responses to brain changes. Change in residual memory variance among initially non-demented older adults was a better predictor of incident dementia than residual memory variance measured at one time-point. PMID:26348002

  2. Is residual memory variance a valid method for quantifying cognitive reserve? A longitudinal application.

    Science.gov (United States)

    Zahodne, Laura B; Manly, Jennifer J; Brickman, Adam M; Narkhede, Atul; Griffith, Erica Y; Guzman, Vanessa A; Schupf, Nicole; Stern, Yaakov

    2015-10-01

    Cognitive reserve describes the mismatch between brain integrity and cognitive performance. Older adults with high cognitive reserve are more resilient to age-related brain pathology. Traditionally, cognitive reserve is indexed indirectly via static proxy variables (e.g., years of education). More recently, cross-sectional studies have suggested that reserve can be expressed as residual variance in episodic memory performance that remains after accounting for demographic factors and brain pathology (whole brain, hippocampal, and white matter hyperintensity volumes). The present study extends these methods to a longitudinal framework in a community-based cohort of 244 older adults who underwent two comprehensive neuropsychological and structural magnetic resonance imaging sessions over 4.6 years. On average, residual memory variance decreased over time, consistent with the idea that cognitive reserve is depleted over time. Individual differences in change in residual memory variance predicted incident dementia, independent of baseline residual memory variance. Multiple-group latent difference score models revealed tighter coupling between brain and language changes among individuals with decreasing residual memory variance. These results suggest that changes in residual memory variance may capture a dynamic aspect of cognitive reserve and could be a useful way to summarize individual cognitive responses to brain changes. Change in residual memory variance among initially non-demented older adults was a better predictor of incident dementia than residual memory variance measured at one time-point. Copyright © 2015. Published by Elsevier Ltd.

  3. Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

    Science.gov (United States)

    Chen, Ying-Chen; Lin, Chih-Yang; Huang, Hui-Chun; Kim, Sungjun; Fowler, Burt; Chang, Yao-Feng; Wu, Xiaohan; Xu, Gaobo; Chang, Ting-Chang; Lee, Jack C.

    2018-02-01

    Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO x /SiO x -based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO x /SiO x structure. The stacking HfO x /SiO x -based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ~1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

  4. Working Memory and Hearing Aid Processing: Literature Findings, Future Directions, and Clinical Applications.

    Science.gov (United States)

    Souza, Pamela; Arehart, Kathryn; Neher, Tobias

    2015-01-01

    Working memory-the ability to process and store information-has been identified as an important aspect of speech perception in difficult listening environments. Working memory can be envisioned as a limited-capacity system which is engaged when an input signal cannot be readily matched to a stored representation or template. This "mismatch" is expected to occur more frequently when the signal is degraded. Because working memory capacity varies among individuals, those with smaller capacity are expected to demonstrate poorer speech understanding when speech is degraded, such as in background noise. However, it is less clear whether (and how) working memory should influence practical decisions, such as hearing treatment. Here, we consider the relationship between working memory capacity and response to specific hearing aid processing strategies. Three types of signal processing are considered, each of which will alter the acoustic signal: fast-acting wide-dynamic range compression, which smooths the amplitude envelope of the input signal; digital noise reduction, which may inadvertently remove speech signal components as it suppresses noise; and frequency compression, which alters the relationship between spectral peaks. For fast-acting wide-dynamic range compression, a growing body of data suggests that individuals with smaller working memory capacity may be more susceptible to such signal alterations, and may receive greater amplification benefit with "low alteration" processing. While the evidence for a relationship between wide-dynamic range compression and working memory appears robust, the effects of working memory on perceptual response to other forms of hearing aid signal processing are less clear cut. We conclude our review with a discussion of the opportunities (and challenges) in translating information on individual working memory into clinical treatment, including clinically feasible measures of working memory.

  5. Investigations of binary and ternary phase change alloys for future memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Rausch, Pascal

    2012-09-13

    The understanding of phase change materials is of great importance because it enables us to predict properties and tailor alloys which might be even better suitable to tackle challenges of future memory applications. Within this thesis two topics have been approached: on the one hand the understanding of the alloy In{sub 3}Sb{sub 1}Te{sub 2} and on the other hand the so called resistivity drift of amorphous Ge-Sn-Te phase change materials. The main topic covers an in depth discussion of the ternary alloy In{sub 3}Sb{sub 1}Te{sub 2}. At first glance, this alloy does not fit into the established concepts of phase alloys: e.g. the existence of resonant bonding in the crystalline phase is not obvious and the number of p-electrons is very low compared to other phase change alloys. Furthermore amorphous phase change alloys with high indium content are usually not discussed in literature, an exception being the recent work by Spreafico et al. on InGeTe{sub 2}. For the first time a complete description of In{sub 3}Sb{sub 1}Te{sub 2} alloy is given in this work for the crystalline phase, amorphous phase and crystallization process. In addition comparisons are drawn to typical phase change materials like Ge{sub 2}Sb{sub 2}Te{sub 5}/GeTe or prototype systems like AgInTe{sub 2} and InTe. The second topic of this thesis deals with the issue of resistivity drift, i.e. the increase of resistivity of amorphous phase change alloys with aging. This drift effect greatly hampers the introduction of multilevel phase change memory devices into the market. Recently a systematic decrease of drift coefficient with stoichiometry has been observed in our group going from GeTe over Ge{sub 3}Sn{sub 1}Te{sub 4} to Ge{sub 2}Sn{sub 2}Te{sub 4}. These alloys are investigated with respect to constraint theory.

  6. Spin and Optical Characterization of Defects in Group IV Semiconductors for Quantum Memory Applications

    Science.gov (United States)

    Rose, Brendon Charles

    This thesis is focused on the characterization of highly coherent defects in both silicon and diamond, particularly in the context of quantum memory applications. The results are organized into three parts based on the spin system: phosphorus donor electron spins in silicon, negatively charged nitrogen vacancy color centers in diamond (NV-), and neutrally charged silicon vacancy color centers in diamond (SiV0). The first part on phosphorus donor electron spins presents the first realization of strong coupling with spins in silicon. To achieve this, the silicon crystal was made highly pure and highly isotopically enriched so that the ensemble dephasing time, T2*, was long (10 micros). Additionally, the use of a 3D resonator aided in realizing uniform coupling, allowing for high fidelity spin ensemble manipulation. These two properties have eluded past implementations of strongly coupled spin ensembles and have been the limiting factor in storing and retrieving quantum information. Second, we characterize the spin properties of the NV- color center in diamond in a large magnetic field. We observe that the electron spin echo envelope modulation originating from the central 14N nuclear spin is much stronger at large fields and that the optically induced spin polarization exhibits a strong orientation dependence that cannot be explained by the existing model for the NV- optical cycle, we develop a modification of the existing model that reproduces the data in a large magnetic field. In the third part we perform characterization and stabilization of a new color center in diamond, SiV0, and find that it has attractive, highly sought-after properties for use as a quantum memory in a quantum repeater scheme. We demonstrate a new approach to the rational design of new color centers by engineering the Fermi level of the host material. The spin properties were characterized in electron spin resonance, revealing long spin relaxation and spin coherence times at cryogenic

  7. Transport and Fatigue Properties of Ferroelectric Polymer P(VDF-TrFE) For Nonvolatile Memory Applications

    KAUST Repository

    Hanna, Amir

    2012-06-01

    function metals for a memory application, as lower leakage would enhance fatigue endurance for P(VDF-TrFE) film.

  8. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  9. Multiferroic Memories

    Directory of Open Access Journals (Sweden)

    Amritendu Roy

    2012-01-01

    Full Text Available Multiferroism implies simultaneous presence of more than one ferroic characteristics such as coexistence of ferroelectric and magnetic ordering. This phenomenon has led to the development of various kinds of materials and conceptions of many novel applications such as development of a memory device utilizing the multifunctionality of the multiferroic materials leading to a multistate memory device with electrical writing and nondestructive magnetic reading operations. Though, interdependence of electrical- and magnetic-order parameters makes it difficult to accomplish the above and thus rendering the device to only two switchable states, recent research has shown that such problems can be circumvented by novel device designs such as formation of tunnel junction or by use of exchange bias. In this paper, we review the operational aspects of multiferroic memories as well as the materials used for these applications along with the designs that hold promise for the future memory devices.

  10. Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

    Science.gov (United States)

    Niedzielski, Bethany Maria

    A Josephson junction is made up of two superconducting layers separated by a barrier. The original Josephson junctions, studied in the early 1960's, contained an insulating barrier. Soon thereafter, junctions with normal-metal barriers were also studied. Ferromagnetic materials were not even theoretically considered as a barrier layer until around 1980, due to the competing order between ferromagnetic and superconducting systems. However, many exciting physical phenomena arise in hybrid superconductor/ferromagnetic devices, including devices where the ground state phase difference between the two superconductors is shifted by pi. Since their experimental debut in 2001, so-called pi junctions have been demonstrated by many groups, including my own, in systems with a single ferromagnetic layer. In this type of system, the phase of the junction can be set to either 0 or pi depending on the thickness of the ferromagnetic layer. Of interest, however, is the ability to control the phase of a single junction between the 0 and pi states. This was theoretically shown to be possible in a system containing two ferromagnetic layers (spin-valve junctions). If the materials and their thicknesses are properly chosen to manipulate the electron pair correlation function, then the phase state of a spin-valve Josephson junction should be capable of switching between the 0 and ? phase states when the magnetization directions of the two ferromagnetic layers are oriented in the antiparallel and parallel configurations, respectively. Such a phase-controllable junction would have immediate applications in cryogenic memory, which is a necessary component to an ultra-low power superconducting computer. A fully superconducting computer is estimated to be orders of magnitude more energy-efficient than current semiconductor-based supercomputers. The goal of this work was to experimentally verify this prediction for a phase-controllable ferromagnetic Josephson junction. To address this

  11. Resistive Random Access Memory from Materials Development fnd Engineering to Novel Encryption and Neuromorphic Applications

    Science.gov (United States)

    Beckmann, Karsten

    Resistive random access memory (ReRAM or RRAM) is a novel form of non-volatile memory that is expected to play a major role in future computing and memory solutions. It has been shown that the resistance state of ReRAM devices can be precisely tuned by modulating switching voltages, by limiting peak current, and by adjusting the switching pulse properties. This enables the realization of novel applications such as memristive neuromorphic computing and neural network computing. I have developed two processes based on 100 and 300mm wafer platforms to demonstrate functional HfO2 based ReRAM devices. The first process is designed for a rapid materials engineering and device characterization, while the second is an advanced hybrid ReRAM/CMOS combination based on the IBM 65nm 10LPe process technology. The 100mm wafer efforts were used to show impacts of etch processes on ReRAM switching performance and the need for a rigorous structural evaluation of ReRAM devices before starting materials development. After an etch development, a bottom electrode comparison between the inert materials Pt, Ru and W was performed where Ru showed superior results with respect to yield and resilience against environmental impacts such as humidity over a 2-month period. A comparison of amorphous and crystalline devices showed no statistical difference in the performance with respect to random telegraph noise. This demonstrates, that the forming process fundamentally alters the crystallographic structure within and around the filament. The 300mm wafer development efforts were aimed towards implementing ReRAM in the FEOL, combined with CMOS, to yield a seamless process flow of 1 transistor 1 ReRAM structures (1T1R). This technology was customized with custom-developed tungsten metal 1 (M1) and dual tungsten/copper via 1 (V1) structures, within which the ReRAM stack is embedded. The ReRAM itself consists of an inert W bottom electrode, HfO2 based active switching layer, a Ti oxygen scavenger

  12. Neural correlates of olfactory and visual memory performance in 3D-simulated mazes after intranasal insulin application.

    Science.gov (United States)

    Brünner, Yvonne F; Rodriguez-Raecke, Rea; Mutic, Smiljana; Benedict, Christian; Freiherr, Jessica

    2016-10-01

    This fMRI study intended to establish 3D-simulated mazes with olfactory and visual cues and examine the effect of intranasally applied insulin on memory performance in healthy subjects. The effect of insulin on hippocampus-dependent brain activation was explored using a double-blind and placebo-controlled design. Following intranasal administration of either insulin (40IU) or placebo, 16 male subjects participated in two experimental MRI sessions with olfactory and visual mazes. Each maze included two separate runs. The first was an encoding maze during which subjects learned eight olfactory or eight visual cues at different target locations. The second was a recall maze during which subjects were asked to remember the target cues at spatial locations. For eleven included subjects in the fMRI analysis we were able to validate brain activation for odor perception and visuospatial tasks. However, we did not observe an enhancement of declarative memory performance in our behavioral data or hippocampal activity in response to insulin application in the fMRI analysis. It is therefore possible that intranasal insulin application is sensitive to the methodological variations e.g. timing of task execution and dose of application. Findings from this study suggest that our method of 3D-simulated mazes is feasible for studying neural correlates of olfactory and visual memory performance. Copyright © 2016 Elsevier Inc. All rights reserved.

  13. Working Memory for Linguistic and Non-linguistic Manual Gestures: Evidence, Theory, and Application.

    Science.gov (United States)

    Rudner, Mary

    2018-01-01

    Linguistic manual gestures are the basis of sign languages used by deaf individuals. Working memory and language processing are intimately connected and thus when language is gesture-based, it is important to understand related working memory mechanisms. This article reviews work on working memory for linguistic and non-linguistic manual gestures and discusses theoretical and applied implications. Empirical evidence shows that there are effects of load and stimulus degradation on working memory for manual gestures. These effects are similar to those found for working memory for speech-based language. Further, there are effects of pre-existing linguistic representation that are partially similar across language modalities. But above all, deaf signers score higher than hearing non-signers on an n-back task with sign-based stimuli, irrespective of their semantic and phonological content, but not with non-linguistic manual actions. This pattern may be partially explained by recent findings relating to cross-modal plasticity in deaf individuals. It suggests that in linguistic gesture-based working memory, semantic aspects may outweigh phonological aspects when processing takes place under challenging conditions. The close association between working memory and language development should be taken into account in understanding and alleviating the challenges faced by deaf children growing up with cochlear implants as well as other clinical populations.

  14. The MONOS memory transistor: application in a radiation-hard nonvolatile RAM

    International Nuclear Information System (INIS)

    Brown, W.D.

    1985-01-01

    The MONOS (metal-oxide-nitride-oxide-silicon) device is a prime candidate for use as the nonvolatile memory element in a radiation-hardened RAM (random-access memory). The endurance, retention and radiation properties of MONOS memory transistors have been studied as a function of post nitride deposition annealing. Following the nitride layer deposition, all devices were subjected to an 800 0 C oxidation step and some were then annealed at 900 0 C in nitrogen. The nitrogen anneal produces an increase in memory window size of approximately 40%. The memory window center of the annealed devices is shifted toward more positive voltages and is more stable with endurance cycling. Endurance cycling to 10 9 cycles produces a 20% increase in memory window size and a 60% increase in decay rate. For a radiation total dose of 10 6 rads (Si), the memory window size is essentially unchanged and the decay rate increases approximately 13%. A combination of 10 9 cycles and 10 6 rads (Si) reduces the decades of retention (in sec) from 6.3 to 4.3 for a +- 23-V 16-μsec write/erase pulse. (author)

  15. Working Memory for Linguistic and Non-linguistic Manual Gestures: Evidence, Theory, and Application

    Directory of Open Access Journals (Sweden)

    Mary Rudner

    2018-05-01

    Full Text Available Linguistic manual gestures are the basis of sign languages used by deaf individuals. Working memory and language processing are intimately connected and thus when language is gesture-based, it is important to understand related working memory mechanisms. This article reviews work on working memory for linguistic and non-linguistic manual gestures and discusses theoretical and applied implications. Empirical evidence shows that there are effects of load and stimulus degradation on working memory for manual gestures. These effects are similar to those found for working memory for speech-based language. Further, there are effects of pre-existing linguistic representation that are partially similar across language modalities. But above all, deaf signers score higher than hearing non-signers on an n-back task with sign-based stimuli, irrespective of their semantic and phonological content, but not with non-linguistic manual actions. This pattern may be partially explained by recent findings relating to cross-modal plasticity in deaf individuals. It suggests that in linguistic gesture-based working memory, semantic aspects may outweigh phonological aspects when processing takes place under challenging conditions. The close association between working memory and language development should be taken into account in understanding and alleviating the challenges faced by deaf children growing up with cochlear implants as well as other clinical populations.

  16. Working memory and hearing aid processing: Literature findings, future directions, and clinical applications

    Directory of Open Access Journals (Sweden)

    Pamela eSouza

    2015-12-01

    Full Text Available Working memory—the ability to process and store information—has been identified as an important aspect of speech perception in difficult listening environments. Working memory can be envisioned as a limited-capacity system which is engaged when an input signal cannot be readily matched to a stored representation or template. This mismatch is expected to occur more frequently when the signal is degraded. Because working memory capacity varies among individuals, those with smaller capacity are expected to demonstrate poorer speech understanding when speech is degraded, such as in background noise. However, it is less clear whether (and how working memory should influence practical decisions, such as hearing treatment. Here, we consider the relationship between working memory capacity and response to specific hearing aid processing strategies. Three types of signal processing are considered, each of which will alter the acoustic signal: fast-acting wide-dynamic range compression, which smooths the amplitude envelope of the input signal; digital noise reduction, which may inadvertently remove speech signal components as it suppresses noise; and frequency compression, which alters the relationship between spectral peaks. For fast-acting wide-dynamic range compression, a growing body of data suggests that individuals with smaller working memory capacity may be more susceptible to such signal alterations, and may receive greater amplification benefit with low alteration processing. While the evidence for a relationship between wide-dynamic range compression and working memory appears robust, the effects of working memory on perceptual response to other forms of hearing aid signal processing are less clear cut. We conclude our review with a discussion of the opportunities (and challenges in translating information on individual working memory into clinical treatment, including clinically-feasible measures of working memory.

  17. Applicability of the Rivermead Behavioural Memory Test – Third Edition (RBMT-3) in Korsakoff’s syndrome and chronic alcoholics

    Science.gov (United States)

    Wester, Arie J; van Herten, Judith C; Egger, Jos IM; Kessels, Roy PC

    2013-01-01

    Purpose To examine the applicability of the newly developed Rivermead Behavioural Memory Test – Third Edition (RBMT-3) as an ecologically-valid memory test in patients with alcohol-related cognitive disorders. Patients and methods An authorized Dutch translation of the RBMT-3 was developed, equivalent to the UK version, and administered to a total of 151 participants – 49 patients with amnesia due to alcoholic Korsakoff’s syndrome, 49 patients with cognitive impairment and a history of chronic alcoholism, not fulfilling the Korsakoff criteria, and 53 healthy controls. Between-group comparisons were made at subtest level, and the test’s diagnostic accuracy was determined. Results Korsakoff patients performed worse than controls on all RBMT-3 subtests (all P-values Korsakoff patients and the controls after delayed testing. The RBMT-3 had good sensitivity and adequate specificity. Conclusion The RBMT-3 is a valid test battery to demonstrate everyday memory deficits in Korsakoff patients and non-Korsakoff patients with alcohol abuse disorder. Korsakoff patients showed an impaired performance on subtests relying on orientation, contextual memory and delayed testing. Our findings provide valuable information for treatment planning and adjustment in patients with alcohol-related cognitive impairments. PMID:23818787

  18. Nano-memory-element applications of carbon nanocapsule encapsulating potassium ions: molecular dynamics study

    International Nuclear Information System (INIS)

    Kang, Jeong Won; Hwang, Ho Jung

    2004-01-01

    We investigated the internal dynamics of ionic fluidic shuttle memory elements consisting of potassium ions encapsulated in C 640 nanocapsules. The systems proposed were the encapsulated-ion shuttle memory devices such as (13 K + ) at C 640 , (3 K + -C 60 -2 K + ) at C 640 and (5 K + -C 60 ) at C 640 . The energetics and the operating responses of ionic fluidic shuttle memory devices, such as transitions between the two states of the C 640 capsule, were examined by using classical molecular dynamics simulations of the shuttle media in the C 640 capsule under external force fields. The operating force fields for stable operations of the shuttle memory device were investigated.

  19. Interventional Application of Shape Memory Polymer Foam Final Report CRADA No. TC-02067-03

    Energy Technology Data Exchange (ETDEWEB)

    Maitland, D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Metzger, M. F. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2017-09-27

    This was a collaborative effort between The Regents of the University of California, Lawrence Livermore National Laboratory (LLNL) and Sierra Interventions, LLC, to develop shape memory polymer foam devices for treating hemorrhagic stroke.

  20. Accelerating Memory-Access-Limited HPC Applications via Novel Fast Data Compression, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — A fast-paced continual increase on the ratio of CPU to memory speed feeds an exponentially growing limitation for extracting performance from HPC systems. Breaking...

  1. An Introduction to a Porous Shape Memory Alloy Dynamic Data Driven Application System

    KAUST Repository

    Douglas, Craig C.; Efendiev, Yalchin; Popov, Peter; Calo, Victor M.

    2012-01-01

    Shape Memory Alloys are capable of changing their crystallographic structure due to changes of temperature and/or stress. Our research focuses on three points: (1) Iterative Homogenization of Porous SMAs: Development of a Multiscale Model of porous

  2. Exploring Shared-Memory Optimizations for an Unstructured Mesh CFD Application on Modern Parallel Systems

    KAUST Repository

    Mudigere, Dheevatsa; Sridharan, Srinivas; Deshpande, Anand; Park, Jongsoo; Heinecke, Alexander; Smelyanskiy, Mikhail; Kaul, Bharat; Dubey, Pradeep; Kaushik, Dinesh; Keyes, David E.

    2015-01-01

    -grid implicit flow solver, which forms the backbone of computational aerodynamics, poses particular challenges due to its large irregular working sets, unstructured memory accesses, and variable/limited amount of parallelism. This code, based on a domain

  3. Accelerating Memory-Access-Limited HPC Applications via Novel Fast Data Compression, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A fast-paced continual increase on the ratio of CPU to memory speed feeds an exponentially growing limitation for extracting performance from HPC systems. Ongoing...

  4. Comparing Predictive Accuracy under Long Memory - With an Application to Volatility Forecasting

    DEFF Research Database (Denmark)

    Kruse, Robinson; Leschinski, Christian; Will, Michael

    This paper extends the popular Diebold-Mariano test to situations when the forecast error loss differential exhibits long memory. It is shown that this situation can arise frequently, since long memory can be transmitted from forecasts and the forecast objective to forecast error loss differentials....... The nature of this transmission mainly depends on the (un)biasedness of the forecasts and whether the involved series share common long memory. Further results show that the conventional Diebold-Mariano test is invalidated under these circumstances. Robust statistics based on a memory and autocorrelation...... extensions of the heterogeneous autoregressive model. While we find that forecasts improve significantly if jumps in the log-price process are considered separately from continuous components, improvements achieved by the inclusion of implied volatility turn out to be insignificant in most situations....

  5. Sn-Sb-Se based binary and ternary alloys for phase change memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Kyung-Min

    2008-10-28

    In this work, the effect of replacing Ge by Sn and Te by Se was studied for a systematic understanding and prediction of new potential candidates for phase change random access memories applications. The temperature dependence of the electrical/structural properties and crystallization kinetics of the Sn-Se based binary and Sn-Sb-Se based ternary alloys were determined and compared with those of the GeTe and Ge-Sb-Te system. The temperature dependence of electrical and structural properties were investigated by van der Pauw measurements, X-ray diffraction, X-ray reflectometry. By varying the heating rate, the Kissinger analysis has been used to determine the combined activation barrier for crystallization. To screen the kinetics of crystallization, a static laser tester was employed. In case of binary alloys of the type Sn{sub x}Se{sub 1-x}, the most interesting candidate is SnSe{sub 2} since it crystallizes into a single crystalline phase and has high electrical contrast and reasonably high activation energy for crystallization. In addition, the SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloy system also might be sufficient for data retention due to their higher transition temperature and activation energy for crystallization in comparison to GeTe-Sb{sub 2}Te{sub 3} system. Furthermore, SnSe{sub 2}-Sb{sub 2}Se{sub 3} pseudobinary alloys have a higher crystalline resistivity. The desired rapid crystallization speed can be obtained for Sn{sub 1}Sb{sub 2}Se{sub 5} and Sn{sub 2}Sb{sub 2}Se{sub 7} alloys. (orig.)

  6. Novel ferroelectric capacitor for non-volatile memory storage and biomedical tactile sensor applications

    International Nuclear Information System (INIS)

    Liu, Shi Yang; Chua, Lynn; Tan, Kian Chuan; Valavan, S.E.

    2010-01-01

    We report on novel ferroelectric thin film compositions for use in non-volatile memory storage and biomedical tactile sensor applications. The lead zirconate titanate (PZT) composition was modified by lanthanum (La 3+ ) (PLZT) and vanadium (V 5+ ) (PZTV, PLZTV) doping. Hybrid films with PZTV and PLZTV as top layers are also made using seed layers of differing compositions using sol-gel and spin coating methods. La 3+ doping decreased the coercive field, polarization and leakage current, while increasing the relative permittivity. V 5+ doping, while having similar effects, results in an enhanced polarization, with comparable dielectric loss characteristics. Complex doping of both La 3+ and V 5+ in PLZTV, while reducing the polarization relative to PZTV, significantly decreases the coercive field. Hybrid films have a greater uniformity of grain formation than non-hybrid films, thus decreasing the coercive field, leakage current and polarization fatigue while increasing the relative permittivity. Analysis using X-ray diffraction (XRD) verified the retention of the PZT perovskite structure in the novel films. PLZT/PZTV has been identified as an optimal ferroelectric film composition due to its desirable ferroelectric, fatigue and dielectric properties, including the highest observed remnant polarization (P r ) of ∼ 25 μC/cm 2 , saturation polarization (P sat ) of ∼ 58 μC/cm 2 and low coercive field (E c ) of ∼ 60 kV/cm at an applied field of ∼ 1000 kV/cm, as well as a low leakage current density of ∼ 10 -5 A/cm 2 at 500 kV/cm and fatigue resistance of up to ∼ 10 10 switching cycles.

  7. Construction and Application of an AMR Algorithm for Distributed Memory Computers

    OpenAIRE

    Deiterding, Ralf

    2003-01-01

    While the parallelization of blockstructured adaptive mesh refinement techniques is relatively straight-forward on shared memory architectures, appropriate distribution strategies for the emerging generation of distributed memory machines are a topic of on-going research. In this paper, a locality-preserving domain decomposition is proposed that partitions the entire AMR hierarchy from the base level on. It is shown that the approach reduces the communication costs and simplifies the im...

  8. Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

    International Nuclear Information System (INIS)

    Son, Dang Ngoc; Van Duy, Nguyen; Jung, Sungwook; Yi, Junsin

    2010-01-01

    Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiN x films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application

  9. Reports on memorial lecture meetings on co-operative application finish of the SF cyclotron and its result reports

    International Nuclear Information System (INIS)

    2000-01-01

    The SF cyclotron at the Institute for Nuclear Study (INS) of University of Tokyo began its co-operative application in 1997 to continue its smooth operation during 21 years reaching March, 1997. Together with improvement of INS organization on April, 1997, it was transferred to the Center for Nuclear Study School of Science, University of Tokyo, INS continued a co-operative research for two years thereafter with Tanashi campus of the High Energy Accelerator Research Organization also established on April, 1997. This co-operative research was finished without accident at the end of March, 1999, to close history of co-operative application of cyclotron during 23 years. This report contains 15 memorial lecture and convivial meeting reports at the co-operative application finish of cyclotron and some results of co-operative applications and experiments, during 23 years. (G.K.)

  10. Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

    Directory of Open Access Journals (Sweden)

    C. C. Huang

    2012-01-01

    Full Text Available Germanium antimony (Ge-Sb thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD. Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875°C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM with energy dispersive X-ray analysis (EDX and X-ray diffraction (XRD techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2–2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

  11. Application of Taguchi method to optimization of surface roughness during precise turning of NiTi shape memory alloy

    Science.gov (United States)

    Kowalczyk, M.

    2017-08-01

    This paper describes the research results of surface quality research after the NiTi shape memory alloy (Nitinol) precise turning by the tools with edges made of polycrystalline diamonds (PCD). Nitinol, a nearly equiatomic nickel-titanium shape memory alloy, has wide applications in the arms industry, military, medicine and aerospace industry, and industrial robots. Due to their specific properties NiTi alloys are known to be difficult-to-machine materials particularly by using conventional techniques. The research trials were conducted for three independent parameters (vc, f, ap) affecting the surface roughness were analyzed. The choice of parameter configurations were performed by factorial design methods using orthogonal plan type L9, with three control factors, changing on three levels, developed by G. Taguchi. S/N ratio and ANOVA analyses were performed to identify the best of cutting parameters influencing surface roughness.

  12. Deep ART Neural Model for Biologically Inspired Episodic Memory and Its Application to Task Performance of Robots.

    Science.gov (United States)

    Park, Gyeong-Moon; Yoo, Yong-Ho; Kim, Deok-Hwa; Kim, Jong-Hwan

    2017-06-26

    Robots are expected to perform smart services and to undertake various troublesome or difficult tasks in the place of humans. Since these human-scale tasks consist of a temporal sequence of events, robots need episodic memory to store and retrieve the sequences to perform the tasks autonomously in similar situations. As episodic memory, in this paper we propose a novel Deep adaptive resonance theory (ART) neural model and apply it to the task performance of the humanoid robot, Mybot, developed in the Robot Intelligence Technology Laboratory at KAIST. Deep ART has a deep structure to learn events, episodes, and even more like daily episodes. Moreover, it can retrieve the correct episode from partial input cues robustly. To demonstrate the effectiveness and applicability of the proposed Deep ART, experiments are conducted with the humanoid robot, Mybot, for performing the three tasks of arranging toys, making cereal, and disposing of garbage.

  13. Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

    Science.gov (United States)

    Briggs, Benjamin D.

    The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

  14. Shape Memory Alloy Modeling and Applications to Porous and Composite Structures

    Science.gov (United States)

    Zhu, Pingping

    There has been a growing concern about an exciting class of advanced material -- shape memory alloys (SMAs) since their discovery several decades ago. SMAs exhibit large reversible stresses and strains owing to a thermoelastic phase transformation. They have been widely used in many engineering fields including aerospace, biomedical, and automotive engineering, especially as sensors, actuators, bone implants and deployable switches. The behavior of SMAs is very complex due to the coupling between thermal and mechanical effects. Theoretical and computational tools are used in this dissertation to investigate the mechanical behavior of SMA and its related structures for seeking better and wider application of this material. In the first part of this dissertation, we proposed an improved macroscopic phenomenological constitutive model of SMA that accounts for all major mechanical behaviors including elasticity, phase transformation, reorientation and plasticity. The model is based on some previous work developed in the Brinson group, and the current efforts are focused on plasticity, the application of a pre-defined strain, unification of notations, and other coding-related work. A user subroutine script VUMAT is developed to implement the constitutive model to the commercial finite element software Abaqus. Typical simulation results based on the model are presented, as well as verification with some experimental results. In the second part, we apply the developed constitutive model to a series of two-dimensional SMA plates with structured arrays of pores to investigate the structural response, especially the stress, strain, phase transformation, and plastic fields. Results are documented about the coupling of the elastic, transformation and plastic fields about the arrays of pores. Theoretical and experimental DIC results are also utilized to validate some simulation results. Conclusions are then drawn to provide understanding in the effect of pores and the

  15. Improved charge trapping properties by embedded graphene oxide quantum-dots for flash memory application

    Science.gov (United States)

    Jia, Xinlei; Yan, Xiaobing; Wang, Hong; Yang, Tao; Zhou, Zhenyu; Zhao, Jianhui

    2018-06-01

    In this work, we have investigated two kinds of charge trapping memory devices with Pd/Al2O3/ZnO/SiO2/p-Si and Pd/Al2O3/ZnO/graphene oxide quantum-dots (GOQDs)/ZnO/SiO2/p-Si structure. Compared with the single ZnO sample, the memory window of the ZnO-GOQDs-ZnO sample reaches a larger value (more than doubled) of 2.7 V under the sweeping gate voltage ± 7 V, indicating a better charge storage capability and the significant charge trapping effects by embedding the GOQDs trapping layer. The ZnO-GOQDs-ZnO devices have better date retention properties with the high and low capacitances loss of ˜ 1.1 and ˜ 6.9%, respectively, as well as planar density of the trapped charges of 1.48 × 1012 cm- 2. It is proposed that the GOQDs play an important role in the outstanding memory characteristics due to the deep quantum potential wells and the discrete distribution of the GOQDs. The long date retention time might have resulted from the high potential barrier which suppressed both the back tunneling and the leakage current. Intercalating GOQDs in the memory device is a promising method to realize large memory window, low-power consumption and excellent retention properties.

  16. Axially Modulated Clamped-Guided Arch Resonator for Memory and Logic Applications

    KAUST Repository

    Hafiz, Md Abdullah Al; Tella, Sherif Adekunle; Alcheikh, Nouha; Fariborzi, Hossein; Younis, Mohammad I.

    2017-01-01

    We experimentally demonstrate memory and logic devices based on an axially modulated clamped-guided arch resonator. The device are electrostatically actuated and capacitively sensed, while the resonance frequency modulation is achieved through an axial electrostatic force from the guided side of the clamped-guided arch microbeam. We present two case studies: first, a dynamic memory based on the nonlinear frequency response of the resonator, and second, a reprogrammable two-input logic gate based on the linear frequency modulation of the resonator. These devices show energy cost per memory/logic operation in pJ, are fully compatible with CMOS fabrication processes, have the potential for on-chip system integration, and operate at room temperature.

  17. Axially Modulated Clamped-Guided Arch Resonator for Memory and Logic Applications

    KAUST Repository

    Hafiz, Md Abdullah Al

    2017-11-03

    We experimentally demonstrate memory and logic devices based on an axially modulated clamped-guided arch resonator. The device are electrostatically actuated and capacitively sensed, while the resonance frequency modulation is achieved through an axial electrostatic force from the guided side of the clamped-guided arch microbeam. We present two case studies: first, a dynamic memory based on the nonlinear frequency response of the resonator, and second, a reprogrammable two-input logic gate based on the linear frequency modulation of the resonator. These devices show energy cost per memory/logic operation in pJ, are fully compatible with CMOS fabrication processes, have the potential for on-chip system integration, and operate at room temperature.

  18. A direct metal transfer method for cross-bar type polymer non-volatile memory applications

    International Nuclear Information System (INIS)

    Kim, Tae-Wook; Lee, Kyeongmi; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Jung, Gun-Young; Lee, Takhee

    2008-01-01

    Polymer non-volatile memory devices in 8 x 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices

  19. Application of morphological associative memories and Fourier descriptors for classification of noisy subsurface signatures

    Science.gov (United States)

    Ortiz, Jorge L.; Parsiani, Hamed; Tolstoy, Leonid

    2004-02-01

    This paper presents a method for recognition of Noisy Subsurface Images using Morphological Associative Memories (MAM). MAM are type of associative memories that use a new kind of neural networks based in the algebra system known as semi-ring. The operations performed in this algebraic system are highly nonlinear providing additional strength when compared to other transformations. Morphological associative memories are a new kind of neural networks that provide a robust performance with noisy inputs. Two representations of morphological associative memories are used called M and W matrices. M associative memory provides a robust association with input patterns corrupted by dilative random noise, while the W associative matrix performs a robust recognition in patterns corrupted with erosive random noise. The robust performance of MAM is used in combination of the Fourier descriptors for the recognition of underground objects in Ground Penetrating Radar (GPR) images. Multiple 2-D GPR images of a site are made available by NASA-SSC center. The buried objects in these images appear in the form of hyperbolas which are the results of radar backscatter from the artifacts or objects. The Fourier descriptors of the prototype hyperbola-like and shapes from non-hyperbola shapes in the sub-surface images are used to make these shapes scale-, shift-, and rotation-invariant. Typical hyperbola-like and non-hyperbola shapes are used to calculate the morphological associative memories. The trained MAMs are used to process other noisy images to detect the presence of these underground objects. The outputs from the MAM using the noisy patterns may be equal to the training prototypes, providing a positive identification of the artifacts. The results are images with recognized hyperbolas which indicate the presence of buried artifacts. A model using MATLAB has been developed and results are presented.

  20. The electromagnetic Christodoulou memory effect and its application to neutron star binary mergers

    International Nuclear Information System (INIS)

    Bieri, Lydia; Chen, PoNing; Yau, Shing-Tung

    2012-01-01

    Gravitational waves are predicted by the general theory of relativity. It has been shown that gravitational waves have a nonlinear memory, displacing test masses permanently. This is called the Christodoulou memory. We proved that the electromagnetic field contributes at highest order to the nonlinear memory effect of gravitational waves, enlarging the permanent displacement of test masses. In experiments like LISA or LIGO which measure distances of test masses, the Christodoulou memory will manifest itself as a permanent displacement of these objects. It has been suggested to detect the Christodoulou memory effect using radio telescopes investigating small changes in pulsar’s pulse arrival times. The latter experiments are based on present-day technology and measure changes in frequency. In the present paper, we study the electromagnetic Christodoulou memory effect and compute it for binary neutron star mergers. These are typical sources of gravitational radiation. During these processes, not only mass and momenta are radiated away in form of gravitational waves, but also very strong magnetic fields are produced and radiated away. Moreover, a large portion of the energy is carried away by neutrinos. We give constraints on the conditions, where the energy transported by electromagnetic radiation is of similar or slightly higher order than the energy radiated in gravitational waves or in form of neutrinos. We find that for coalescing neutron stars, large magnetic fields magnify the Christodoulou memory as long as the gaseous environment is sufficiently rarefied. Thus the observed effect on test masses of a laser interferometer gravitational wave detector will be enlarged by the contribution of the electromagnetic field. Therefore, the present results are important for the planned experiments. Looking at the null asymptotics of spacetimes, which are solutions of the Einstein–Maxwell equations, we derive the electromagnetic Christodoulou memory effect. We obtain

  1. Electrical studies of Ge4Sb1Te5 devices for memory applications

    Science.gov (United States)

    Sangeetha, B. G.; Shylashree, N.

    2018-05-01

    In this paper, the Ge4Sb1Te5 thin film device preparation and electrical studies for memory devices were carried out. The device was deposited using vapor-evaporation technique. RESET to SET state switching was shown using current-voltage characterization. The current-voltage characterization shows the switching between SET to RESET state and it was found that it requires a low energy for transition. Switching between amorphous to crystalline nature was studied using resistance-voltage characteristics. The endurance showed the effective use of this composition for memory device.

  2. A novel network of chaotic elements and its application in multi-valued associative memory

    International Nuclear Information System (INIS)

    Xiu Chunbo; Liu Xiangdong; Tang Yunyu; Zhang Yuhe

    2004-01-01

    We give a novel chaotic element model whose activation function composed of Gauss and Sigmoid function. It is shown that the model may exhibit a complex dynamic behavior. The most significant bifurcation processes, leading to chaos, are investigated through the computation of the Lyapunov exponents. Based on this model, we propose a novel network of chaotic elements, which can be applied in associative memory, and then investigate its dynamic behavior. It is worth noting that multi-valued associative memory can also be realized by this network

  3. Ferroelectric tunneling element and memory applications which utilize the tunneling element

    Science.gov (United States)

    Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

    2010-07-20

    A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

  4. The MUSOS (MUsic SOftware System) Toolkit: A computer-based, open source application for testing memory for melodies.

    Science.gov (United States)

    Rainsford, M; Palmer, M A; Paine, G

    2018-04-01

    Despite numerous innovative studies, rates of replication in the field of music psychology are extremely low (Frieler et al., 2013). Two key methodological challenges affecting researchers wishing to administer and reproduce studies in music cognition are the difficulty of measuring musical responses, particularly when conducting free-recall studies, and access to a reliable set of novel stimuli unrestricted by copyright or licensing issues. In this article, we propose a solution for these challenges in computer-based administration. We present a computer-based application for testing memory for melodies. Created using the software Max/MSP (Cycling '74, 2014a), the MUSOS (Music Software System) Toolkit uses a simple modular framework configurable for testing common paradigms such as recall, old-new recognition, and stem completion. The program is accompanied by a stimulus set of 156 novel, copyright-free melodies, in audio and Max/MSP file formats. Two pilot tests were conducted to establish the properties of the accompanying stimulus set that are relevant to music cognition and general memory research. By using this software, a researcher without specialist musical training may administer and accurately measure responses from common paradigms used in the study of memory for music.

  5. Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application

    International Nuclear Information System (INIS)

    Ji, Xinglong; Zheng, Yonghui; Zhou, Wangyang; Wu, Liangcai; Cao, Liangliang; Zhu, Min; Rao, Feng; Song, Zhitang; Feng, Songlin

    2015-01-01

    In this paper, V 0.21 Sb 2 Te 3 (VST) has been proposed for phase-change memory applications. With vanadium incorporating, VST has better thermal stability than Sb 2 Te 3 and can maintain in amorphous phase at room temperature. Two resistance steps were observed in temperature dependent resistance measurements. By real-time observing the temperature dependent lattice structure evolution, VST presents as a homogenous phase throughout the whole thermal process. Combining Hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of VST material. Then, the amorphous thermal stability enhancement can also be rooted in the suppression of the fast growth crystallization mechanism. Furthermore, the applicability of VST is demonstrated by resistance-voltage measurement, and the phase transition of VST can be triggered by a 15 ns electric pulse. In addition, endurance up to 2.7×10 4 cycles makes VST a promising candidate for phase-change memory applications

  6. Time Series with Long Memory

    OpenAIRE

    西埜, 晴久

    2004-01-01

    The paper investigates an application of long-memory processes to economic time series. We show properties of long-memory processes, which are motivated to model a long-memory phenomenon in economic time series. An FARIMA model is described as an example of long-memory model in statistical terms. The paper explains basic limit theorems and estimation methods for long-memory processes in order to apply long-memory models to economic time series.

  7. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

    KAUST Repository

    Ghoneim, Mohamed T.; Zidan, Mohammed A.; Al-Nassar, Mohammed Y.; Hanna, Amir; Kosel, Jü rgen; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational

  8. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

    KAUST Repository

    Wang, Jer-Chyi; Chang, Kai-Ping; Lin, Chih-Ting; Su, Ching-Yuan; Gü neş, Fethullah; Boutchich, Mohamed; Chen, Chang-Hsiao; Chen, Ching-Hsiang; Chen, Ching-Shiun; Li, Lain-Jong; Lai, Chao-Sung

    2016-01-01

    that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge

  9. Applications of Case Based Organizational Memory Supported by the PAbMM Architecture

    Directory of Open Access Journals (Sweden)

    Martín

    2017-04-01

    Full Text Available In the aim to manage and retrieve the organizational knowledge, in the last years numerous proposals of models and tools for knowledge management and knowledge representation have arisen. However, most of them store knowledge in a non-structured or semi-structured way, hindering the semantic and automatic processing of this knowledge. In this paper we present a more detailed case-based organizational memory ontology, which aims at contributing to the design of an organizational memory based on cases, so that it can be used to learn, reasoning, solve problems, and as support to better decision making as well. The objective of this Organizational Memory is to serve as base for the organizational knowledge exchange in a processing architecture specialized in the measurement and evaluation. In this way, our processing architecture is based on the C-INCAMI framework (Context-Information Need, Concept model, Attribute, Metric and Indicator for defining the measurement projects. Additionally, the proposal architecture uses a big data repository to make available the data for consumption and to manage the Organizational Memory, which allows a feedback mechanism in relation with online processing. In order to illustrate its utility, two practical cases are explained: A pasture predictor system, using the data of the weather radar (WR of the Experimental Agricultural Station (EAS INTA Anguil (La Pampa State, Argentina and an outpatient monitoring scenario. Future trends and concluding remarks are extended.

  10. Multilevel SOT-MRAM Cell with a Novel Sensing Scheme for High-Density Memory Applications

    DEFF Research Database (Denmark)

    Zeinali, Behzad; Esmaeili, Mahsa; Madsen, Jens Kargaard

    2017-01-01

    This paper presents a multilevel spin-orbit torque magnetic random access memory (SOT-MRAM). The conventional SOT-MRAMs enables a reliable and energy efficient write operation. However, these cells require two access transistors per cell, hence the efficiency of the SOTMRAMs can be questioned in ...

  11. Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Meiyu Stella [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); Globalfoundries Singapore Pte Ltd, 60 Woodlands Industrial Park D, 738406 (Singapore); Suresh, Vignesh [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); Agency for Science, Technology and Research - A*Star, Institute of Materials Research and Engineering (IMRE), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Chan, Mei Yin [School of Materials Science and Engineering (MSE), Nanyang Technological University (NTU), 50 Nanyang Avenue, 639798 (Singapore); Ma, Yu Wei [Globalfoundries Singapore Pte Ltd, 60 Woodlands Industrial Park D, 738406 (Singapore); Lee, Pooi See [School of Materials Science and Engineering (MSE), Nanyang Technological University (NTU), 50 Nanyang Avenue, 639798 (Singapore); Krishnamoorthy, Sivashankar [Agency for Science, Technology and Research - A*Star, Institute of Materials Research and Engineering (IMRE), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Science et Analyse des Materiaux Unit (SAM), Centre de Recherche Public-Gabriel Lippmann, 41, rue du Brill, Belvaux, 4422 (Luxembourg); Srinivasan, M.P., E-mail: srinivasan.madapusi@rmit.edu.au [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); School of Engineering, RMIT University, Building 10, Level 11, Room 14, 376-392 Swanston Street, Melbourne, Victoria, 3001 (Australia)

    2017-01-15

    A simple and low-cost process of embedding metal nanocrystals as charge storage centers within a dielectric is demonstrated to address leakage issues associated with the scaling of the tunnelling oxide in flash memories. Metal nanocrystals with high work functions (nickel, platinum and palladium) were prepared as embedded species in methyl siloxane spin-on-glass (SOG) films on silicon substrates. Sub-10 nm-sized, well-isolated, uniformly distributed, multi-layered nanocrystals with high particle densities (10{sup 11}–10{sup 12} cm{sup −2}) were formed in the films by thermal curing of the spin-coated SOG films containing the metal precursors. Capacitance-Voltage measurements performed on metal-insulator-semiconductor capacitors with the SOG films show that the presence of metal nanocrystals enhanced the memory window of the films to 2.32 V at low operating voltages of ±5 V. These SOG films demonstrated the ability to store both holes and electrons. Capacitance-time measurements show good charge retention of more than 75% after 10{sup 4} s of discharging. This work demonstrates the applicability of the low-cost in-situ sol-gel preparation in contrast to conventional methods that involve multiple and expensive processing steps. - Highlights: • Sub-10 nm sized, well-isolated, uniformly distributed nanoparticle based charge trap memories. • Preparation of multi-layer high work function metal nanocrystals at low cost. • Large memory window of 2.32 V at low operating voltages of ±5 V. • Good charge retention of more than 90% and 75% after 10{sup 3} and 10{sup 4} s of discharging respectively. • Use of a 3 nm thick tunnelling oxide in compliance with ITRS specifications.

  12. Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications

    International Nuclear Information System (INIS)

    Huang, Meiyu Stella; Suresh, Vignesh; Chan, Mei Yin; Ma, Yu Wei; Lee, Pooi See; Krishnamoorthy, Sivashankar; Srinivasan, M.P.

    2017-01-01

    A simple and low-cost process of embedding metal nanocrystals as charge storage centers within a dielectric is demonstrated to address leakage issues associated with the scaling of the tunnelling oxide in flash memories. Metal nanocrystals with high work functions (nickel, platinum and palladium) were prepared as embedded species in methyl siloxane spin-on-glass (SOG) films on silicon substrates. Sub-10 nm-sized, well-isolated, uniformly distributed, multi-layered nanocrystals with high particle densities (10"1"1–10"1"2 cm"−"2) were formed in the films by thermal curing of the spin-coated SOG films containing the metal precursors. Capacitance-Voltage measurements performed on metal-insulator-semiconductor capacitors with the SOG films show that the presence of metal nanocrystals enhanced the memory window of the films to 2.32 V at low operating voltages of ±5 V. These SOG films demonstrated the ability to store both holes and electrons. Capacitance-time measurements show good charge retention of more than 75% after 10"4 s of discharging. This work demonstrates the applicability of the low-cost in-situ sol-gel preparation in contrast to conventional methods that involve multiple and expensive processing steps. - Highlights: • Sub-10 nm sized, well-isolated, uniformly distributed nanoparticle based charge trap memories. • Preparation of multi-layer high work function metal nanocrystals at low cost. • Large memory window of 2.32 V at low operating voltages of ±5 V. • Good charge retention of more than 90% and 75% after 10"3 and 10"4 s of discharging respectively. • Use of a 3 nm thick tunnelling oxide in compliance with ITRS specifications.

  13. Solid-state Memory on Flexible Silicon for Future Electronic Applications

    KAUST Repository

    Ghoneim, Mohamed

    2016-11-01

    Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion

  14. Shape memory alloys and their application to actuators for deployable structures

    International Nuclear Information System (INIS)

    Weimin Huang

    1998-03-01

    Although it has been recognised that SMA materials have a significant potential for deployment actuators, the number of applications of SMA-based actuators to the present day is still quite small, since a deeper understanding of the thermomechanical behaviour of SMA and how it might be exploited in the design of working actuators is necessary. In order to get a complete picture of the thermomechanical behaviour of Nitinol, one type of SMA, two kinds of experiment, purely thermal tests and thermomechanical tests, were carried out on Nitinol wires with diameters of 1 mm and 0.5 mm, and on Nitinol bars with diameter of 6.5 mm. In the purely thermal tests, a Differential Scanning Calorimeter was used to determine the phase transformation/ temperature relation of Nitinol wire with diameter of 1 mm and Nitinol bar. The thermomechanical tests, including tension tests at different temperatures, tension tests under different strain rates, response to suddenly applied loads, thermal cycling under different loads and thermal cycling with fixed length were carried out on Nitinol wire. Torsional tests, thermal cycling under different torques, and normal tension and thermal cycling tests were carried out on Nitinol bars with diameter of 6.5 mm. We have developed a thermo-micromechanical model based on complementary free energy and micromechanical transformation system to investigate the behaviour of shape memory under uniaxial load cycling and thermal cycling. Experimentally observed phenomena, such as V-shape of critical stress, non-symmetrical behaviour in tension and compression, transformation front behaviour, and multiphase transformation, were explained by this model. We present a phenomenological model which is based on the tension test, carried out at different constant temperatures, and a thermal cycling test under different constant loads. We have shown that our model can reproduce accurately the stress-strain-temperature relationship for all the quasi-static tests we

  15. Continuous-Time Random Walk with multi-step memory: an application to market dynamics

    Science.gov (United States)

    Gubiec, Tomasz; Kutner, Ryszard

    2017-11-01

    An extended version of the Continuous-Time Random Walk (CTRW) model with memory is herein developed. This memory involves the dependence between arbitrary number of successive jumps of the process while waiting times between jumps are considered as i.i.d. random variables. This dependence was established analyzing empirical histograms for the stochastic process of a single share price on a market within the high frequency time scale. Then, it was justified theoretically by considering bid-ask bounce mechanism containing some delay characteristic for any double-auction market. Our model appeared exactly analytically solvable. Therefore, it enables a direct comparison of its predictions with their empirical counterparts, for instance, with empirical velocity autocorrelation function. Thus, the present research significantly extends capabilities of the CTRW formalism. Contribution to the Topical Issue "Continuous Time Random Walk Still Trendy: Fifty-year History, Current State and Outlook", edited by Ryszard Kutner and Jaume Masoliver.

  16. Finite Memory Walk and Its Application to Small-World Network

    Science.gov (United States)

    Oshima, Hiraku; Odagaki, Takashi

    2012-07-01

    In order to investigate the effects of cycles on the dynamical process on both regular lattices and complex networks, we introduce a finite memory walk (FMW) as an extension of the simple random walk (SRW), in which a walker is prohibited from moving to sites visited during m steps just before the current position. This walk interpolates the simple random walk (SRW), which has no memory (m = 0), and the self-avoiding walk (SAW), which has an infinite memory (m = ∞). We investigate the FMW on regular lattices and clarify the fundamental characteristics of the walk. We find that (1) the mean-square displacement (MSD) of the FMW shows a crossover from the SAW at a short time step to the SRW at a long time step, and the crossover time is approximately equivalent to the number of steps remembered, and that the MSD can be rescaled in terms of the time step and the size of memory; (2) the mean first-return time (MFRT) of the FMW changes significantly at the number of remembered steps that corresponds to the size of the smallest cycle in the regular lattice, where ``smallest'' indicates that the size of the cycle is the smallest in the network; (3) the relaxation time of the first-return time distribution (FRTD) decreases as the number of cycles increases. We also investigate the FMW on the Watts--Strogatz networks that can generate small-world networks, and show that the clustering coefficient of the Watts--Strogatz network is strongly related to the MFRT of the FMW that can remember two steps.

  17. Applicability of the Rivermead Behavioural Memory Test – Third Edition (RBMT-3 in Korsakoff's syndrome and chronic alcoholics

    Directory of Open Access Journals (Sweden)

    Wester AJ

    2013-06-01

    Full Text Available Arie J Wester,1 Judith C van Herten,2 Jos IM Egger,2–4 Roy PC Kessels1,2,5 1Korsakoff Clinic, Vincent van Gogh Institute for Psychiatry, Venray, The Netherlands; 2Donders Institute for Brain, Cognition and Behavior, Radboud University Nijmegen, Nijmegen, The Netherlands; 3Centre of Excellence for Neuropsychiatry, Vincent van Gogh Institute for Psychiatry, Venray, The Netherlands; 4Behavioral Science Institute, Radboud University Nijmegen, Nijmegen, The Netherlands; 5Department of Medical Psychology, Radboud University Nijmegen Medical Centre, Nijmegen, The Netherlands Purpose: To examine the applicability of the newly developed Rivermead Behavioural Memory Test – Third Edition (RBMT-3 as an ecologically-valid memory test in patients with alcohol-related cognitive disorders. Patients and methods: An authorized Dutch translation of the RBMT-3 was developed, equivalent to the UK version, and administered to a total of 151 participants – 49 patients with amnesia due to alcoholic Korsakoff's syndrome, 49 patients with cognitive impairment and a history of chronic alcoholism, not fulfilling the Korsakoff criteria, and 53 healthy controls. Between-group comparisons were made at subtest level, and the test's diagnostic accuracy was determined. Results: Korsakoff patients performed worse than controls on all RBMT-3 subtests (all P-values < 0.0005. The alcoholism group performed worse than controls on most (all P-values < 0.02, but not all RBMT-3 subtests. Largest effects were found between the Korsakoff patients and the controls after delayed testing. The RBMT-3 had good sensitivity and adequate specificity. Conclusion: The RBMT-3 is a valid test battery to demonstrate everyday memory deficits in Korsakoff patients and non-Korsakoff patients with alcohol abuse disorder. Korsakoff patients showed an impaired performance on subtests relying on orientation, contextual memory and delayed testing. Our findings provide valuable information for treatment

  18. InAs quantum dots as charge storing elements for applications in flash memory devices

    Energy Technology Data Exchange (ETDEWEB)

    Islam, Sk Masiul; Biswas, Pranab [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Banerji, P., E-mail: pallab@matsc.iitkgp.ernet.in [Materials Science Centre, Indian Institute of Technology, Kharagpur 721 302 (India); Chakraborty, S. [Applied Materials Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Sector-I, Kolkata 700 064 (India)

    2015-08-15

    Graphical abstract: - Highlights: • Catalyst-free growth of InAs quantum dots was carried out on high-k ZrO{sub 2}. • Memory device with InAs quantum dots as charge storage nodes are fabricated. • Superior memory window, low leakage and reasonably good retention were observed. • Carrier transport phenomena are explained in both program and erase operations. - Abstract: InAs quantum dots (QDs) were grown by metal organic chemical vapor deposition technique to use them as charge storage nodes. Uniform QDs were formed with average diameter 5 nm and height 5–10 nm with a density of 2 × 10{sup 11} cm{sup −2}. The QDs were grown on high-k dielectric layer (ZrO{sub 2}), which was deposited onto ultra-thin GaP passivated p-GaAs (1 0 0) substrate. A charge storage device with the structure Metal/ZrO{sub 2}/InAs QDs/ZrO{sub 2}/(GaP)GaAs/Metal was fabricated. The devices containing InAs QDs exhibit superior memory window, low leakage current density along with reasonably good charge retention. A suitable electronic band diagram corresponding to programming and erasing operations was proposed to explain the operation.

  19. Evaluating Recall and Recognition Memory Using the Montreal Cognitive Assessment: Applicability for Alzheimer's and Huntington's Diseases.

    Science.gov (United States)

    Van Liew, Charles; Santoro, Maya S; Goldstein, Jody; Gluhm, Shea; Gilbert, Paul E; Corey-Bloom, Jody

    2016-12-01

    We sought to investigate whether the Montreal Cognitive Assessment (MoCA) could provide a brief assessment of recall and recognition using Huntington disease (HD) and Alzheimer disease (AD) as disorders characterized by different memory deficits. This study included 80 participants with HD, 64 participants with AD, and 183 community-dwelling control participants. Random-effects hierarchical logistic regressions were performed to assess the relative performance of the normal control (NC), participants with HD, and participants with AD on verbal free recall, cued recall, and multiple-choice recognition on the MoCA. The NC participants performed significantly better than participants with AD at all the 3 levels of assessment. No difference existed between participants with HD and NC for cued recall, but NC participants performed significantly better than participants with HD on free recall and recognition. The participants with HD performed significantly better than participants with AD at all the 3 levels of assessment. The MoCA appears to be a valuable, brief cognitive assessment capable of identifying specific memory deficits consistent with known differences in memory profiles. © The Author(s) 2016.

  20. Capturing the Landauer bound through the application of a detailed Jarzynski equality for entropic memory erasure.

    Science.gov (United States)

    Das, Moupriya

    2014-12-01

    The states of an overdamped Brownian particle confined in a two-dimensional bilobal enclosure are considered to correspond to two binary values: 0 (left lobe) and 1 (right lobe). An ensemble of such particles represents bits of entropic information. An external bias is applied on the particles, equally distributed in two lobes, to drive them to a particular lobe erasing one kind of bit of information. It has been shown that the average work done for the entropic memory erasure process approaches the Landauer bound for a very slow erasure cycle. Furthermore, the detailed Jarzynski equality holds to a very good extent for the erasure protocol, so that the Landauer bound may be calculated irrespective of the time period of the erasure cycle in terms of the effective free-energy change for the process. The detailed Jarzynski equality applied to two subprocesses, namely the transition from entropic memory state 0 to state 1 and the transition from entropic memory state 1 to state 1, connects the work done on the system to the probability to occupy the two states under a time-reversed process. In the entire treatment, the work appears as a boundary effect of the physical confinement of the system not having a conventional potential energy barrier. Finally, an analytical derivation of the detailed and classical Jarzynski equality for Brownian movement in confined space with varying width has been proposed. Our analytical scheme supports the numerical simulations presented in this paper.

  1. Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

    Science.gov (United States)

    Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

    2016-05-01

    We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

  2. Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application

    Science.gov (United States)

    Navlakha, Nupur; Kranti, Abhinav

    2017-07-01

    Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. The single gate (G2) controls the holes in the potential barrier induced through the proper selection of bias and workfunction. The results indicate that the planar tri-gate achieves optimum performance evaluated in terms of two composite metrics (M1 and M2), namely, product of (i) Sense Margin (SM) and Retention Time (RT) i.e., M1 = SM × RT and (ii) Sense Margin and Current Ratio (CR) i.e., M2 = SM × CR. The regulation of barriers created by the gates (G1 and G2) through the optimal use of device parameters leads to better performance metrics, with significant improvement at scaled lengths as compared to other tunneling based dynamic memory architectures. The investigation shows that lengths of G1, G2 and lateral spacing can be scaled down to 25 nm, 50 nm, and 30 nm, respectively, while achieving reasonable values for (M1, M2). The work demonstrates a systematic approach to showcase the advancement in TFET based Dynamic Random Access Memory (DRAM) through the use of planar tri-gate topology at a lower bias value. The concept, design, and operation of planar tri-gate architecture provide valuable viewpoints for TFET based DRAM.

  3. Fabrication of Pb (Zr, Ti) O3 Thin Film for Non-Volatile Memory Device Application

    International Nuclear Information System (INIS)

    Mar Lar Win

    2011-12-01

    Ferroelectric lead zirconate titanate powder was composed of mainly the oxides of titanium, zirconium and lead. PZT powder was firstly prepared by thermal synthesis at different Zr/Ti ratios with various sintering temperatures. PZT thin film was fabricated on SiO2/Si substrate by using thermal evaporation method. Physical and elemental analysis were carried out by using SEM, EDX and XRD The ferroelectric properties and the switching behaviour of the PZT thin films were investigated. The ferroelectric properties and switching properties of the PZT thin film (near morphotropic phase boundary sintered at 800 C) could function as a nonvolatile memory.

  4. A Memory/Immunology-Based Control Approach with Applications to Multiple Spacecraft Formation Flying

    Directory of Open Access Journals (Sweden)

    Liguo Weng

    2013-01-01

    Full Text Available This paper addresses the problem of formation control for multiple spacecrafts in Planetary Orbital Environment (POE. Due to the presence of diverse interferences and uncertainties in the outer space, such as the changing spacecraft mass, unavailable space parameters, and varying gravity forces, traditional control methods encounter great difficulties in this area. A new control approach inspired by human memory and immune system is proposed, and this approach is shown to be capable of learning from past control experience and current behavior to improve its performance. It demands much less system dynamic information as compared with traditional controls. Both theoretic analysis and computer simulation verify its effectiveness.

  5. Composable local memory organisation for streaming applications on embedded MPSoCs

    NARCIS (Netherlands)

    Ambrose, J.; Molnos, A.; Nelson, A.; Cotofana, S.; Goossens, K.G.W.; Juurlink, B.

    2011-01-01

    Multi-Processor Systems on a Chip (MPSoCs) are suitable platforms for the implementation of complex embedded applications. An MPSoC is composable if the functional and temporal behaviour of each application is independent of the absence or presence of other applications. Composability is required

  6. Improved detection of incipient anomalies via multivariate memory monitoring charts: Application to an air flow heating system

    KAUST Repository

    Harrou, Fouzi

    2016-08-11

    Detecting anomalies is important for reliable operation of several engineering systems. Multivariate statistical monitoring charts are an efficient tool for checking the quality of a process by identifying abnormalities. Principal component analysis (PCA) was shown effective in monitoring processes with highly correlated data. Traditional PCA-based methods, nevertheless, often are relatively inefficient at detecting incipient anomalies. Here, we propose a statistical approach that exploits the advantages of PCA and those of multivariate memory monitoring schemes, like the multivariate cumulative sum (MCUSUM) and multivariate exponentially weighted moving average (MEWMA) monitoring schemes to better detect incipient anomalies. Memory monitoring charts are sensitive to incipient anomalies in process mean, which significantly improve the performance of PCA method and enlarge its profitability, and to utilize these improvements in various applications. The performance of PCA-based MEWMA and MCUSUM control techniques are demonstrated and compared with traditional PCA-based monitoring methods. Using practical data gathered from a heating air-flow system, we demonstrate the greater sensitivity and efficiency of the developed method over the traditional PCA-based methods. Results indicate that the proposed techniques have potential for detecting incipient anomalies in multivariate data. © 2016 Elsevier Ltd

  7. Characterization of gadolinium oxide thin films with CF{sub 4} plasma treatment for resistive switching memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Jer-Chyi, E-mail: jcwang@mail.cgu.edu.tw [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Ye, Yu-Ren [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Lai, Chao-Sung, E-mail: cslai@mail.cgu.edu.tw [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Lin, Chih-Ting [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Lu, Hsin-Chun [Department of Chemical and Materials Engineering, Chang Gung University, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Wu, Chih-I [Graduated Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China); Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan (China); Wang, Po-Sheng [Graduated Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China)

    2013-07-01

    The effect of the CF{sub 4} plasma treatment on the gadolinium oxide (Gd{sub x}O{sub y}) thin films for the resistive random access memory (RRAM) applications was investigated. The material properties of the fluorine incorporated Gd{sub x}O{sub y} films were analyzed by the X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and ultraviolet–visible spectroscopy (UV–VIS). Further, the set and reset voltages of the Pt/Gd{sub x}O{sub y}/W RRAM devices with the CF{sub 4} plasma treatment were effectively reduced to −1.15 and 2.1 V respectively owing to the low Schottky barrier height. The formation of Gd-F bonds can prevent the oxygen atoms from out-diffusing through Pt grain boundaries into the atmosphere, leading to the superior retention characteristics for over 10{sup 4} s. The CF{sub 4} plasma treated Gd{sub x}O{sub y} RRAMs can sustain a resistance ratio of 10{sup 2} for more than 800 times stable set/reset cycling, suitable for future low-voltage and high-performance nonvolatile memory operation.

  8. Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

    KAUST Repository

    Mohammed, Hanan

    2018-04-18

    A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

  9. Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

    KAUST Repository

    Mohammed, Hanan; Corte-Leó n, Hector; Ivanov, Yurii P.; Lopatin, Sergei; Moreno, Julian A.; Chuvilin, Andrey; Salimath, Akshaykumar; Manchon, Aurelien; Kazakova, Olga; Kosel, Jü rgen

    2018-01-01

    A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

  10. Exploring Shared-Memory Optimizations for an Unstructured Mesh CFD Application on Modern Parallel Systems

    KAUST Repository

    Mudigere, Dheevatsa

    2015-05-01

    In this work, we revisit the 1999 Gordon Bell Prize winning PETSc-FUN3D aerodynamics code, extending it with highly-tuned shared-memory parallelization and detailed performance analysis on modern highly parallel architectures. An unstructured-grid implicit flow solver, which forms the backbone of computational aerodynamics, poses particular challenges due to its large irregular working sets, unstructured memory accesses, and variable/limited amount of parallelism. This code, based on a domain decomposition approach, exposes tradeoffs between the number of threads assigned to each MPI-rank sub domain, and the total number of domains. By applying several algorithm- and architecture-aware optimization techniques for unstructured grids, we show a 6.9X speed-up in performance on a single-node Intel® XeonTM1 E5 2690 v2 processor relative to the out-of-the-box compilation. Our scaling studies on TACC Stampede supercomputer show that our optimizations continue to provide performance benefits over baseline implementation as we scale up to 256 nodes.

  11. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    International Nuclear Information System (INIS)

    Gayathri, A.G.; Joseph, C.M.

    2016-01-01

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10 9 and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  12. Effect of vacuum annealing on evaporated pentacene thin films for memory device applications

    Energy Technology Data Exchange (ETDEWEB)

    Gayathri, A.G., E-mail: gaythri305@yahoo.com; Joseph, C.M., E-mail: cmjoseph@rediffmail.com

    2016-09-15

    Graphical abstract: Switching of ITO/pentacene/Al thin films for different annealing temperatures. - Highlights: • Memory device performance in pentacene improved considerably with annealing. • ON/OFF ratio of the pentacene device increases due to annealing. • Threshold voltage reduces from 2.55 V to 1.35 V due to annealing. • Structure of pentacene thin films is also dependent on annealing temperature. - Abstract: Thin films of pentacene were deposited thermally onto glass substrates and annealed at 323 K, 373 K, 423 K, 473 K and 523 K in high vacuum. Effect of annealing on the morphological and structural properties of these films was studied. X-ray diffraction patterns confirmed the crystalline nature of the films. Electrical studies for the use as write once read many (WORM) memory devices were done for the vacuum deposited pentacene thin films on indium tin oxide coated glass. Due to annealing, a sharp increase in the ON/OFF ratio of current and a decrease in threshold voltage were observed at around 373 K. This device showed a stable switching with an ON/OFF current ratio as high as 10{sup 9} and a switching threshold voltage of 1.35 V. The performance of the device degraded above 423 K due to the changes in the crystallinity of the film.

  13. Quantum memory Quantum memory

    Science.gov (United States)

    Le Gouët, Jean-Louis; Moiseev, Sergey

    2012-06-01

    Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

  14. Characterizing Memory Usage Behavior in Memory-related Code Changes

    OpenAIRE

    Wong, Howard Wah

    2017-01-01

    With the heavy memory pressure produced by multi-core systems and with memory per- formance trailing processor performance, today’s application developers need to consider the memory subsystem during software development. In particular, optimizing software re- quires a deep understanding of how the software uses the memory and how the hardware satisfies the memory requests. In order to accelerate development, programmers rely on soft- ware tools such as profilers for insightful analysis. Howe...

  15. Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

    Science.gov (United States)

    Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

    2018-05-01

    Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

  16. Atomic diffusion in laser irradiated Ge rich GeSbTe thin films for phase change memory applications

    Science.gov (United States)

    Privitera, S. M. S.; Sousa, V.; Bongiorno, C.; Navarro, G.; Sabbione, C.; Carria, E.; Rimini, E.

    2018-04-01

    The atomic diffusion and compositional variations upon melting have been studied by transmission electron microscopy and electron energy loss spectroscopy in Ge rich GeSbTe films, with a composition optimized for memory applications. Melting and quenching has been achieved by laser pulses, in order to study pure thermal diffusion without electric field induced electromigration. The effect of different laser energy densities has been investigated. The diffusion of Ge atoms in the molten phase is found to be a prominent mechanism and, by employing finite elements computational analysis, a diffusion coefficient of Ge on the order of 5  ×  10-5 cm2 s-1 has been estimated.

  17. Reactively sputtered Ti-Si-N films for application as heating layers for low-current phase-change memory

    International Nuclear Information System (INIS)

    Yin, You; Noguchi, Tomoyuki; Ota, Kazuhiro; Higano, Naoya; Sone, Hayato; Hosaka, Sumio

    2009-01-01

    In this study, we investigate the properties of Ti-Si-N films for the application as the heating layers in phase-change memory (PCM). The experimental results show that the resistivity of Ti-Si-N films can be varied by over six orders of magnitude from 2.18 x 10 4 to 3.9x10 2 Ω-cm by increasing the flow rate ratio [N 2 /(N 2 +Ar)] from 0 to 10%. The controllability of resistivity might result from the concentration change from Ti-Si to mixture of TiN and Si 3 N 4 . Reversible switching was also successfully demonstrated by using a lateral PCM with these heating layers. The stability of the Ti-Si-N films at high temperatures implies that they can be used as the heating layers in the conventional vertical PCMs for current reduction.

  18. Investigation of environmental friendly Te-free SiSb material for applications of phase-change memory

    International Nuclear Information System (INIS)

    Zhang Ting; Song Zhitang; Liu Bo; Feng Songlin

    2008-01-01

    Te-free environmental friendly Si x Sb 100−x phase-change materials are investigated. The binary material, which is compatible with the complementary metal-oxide-semiconductor manufacturing process, is outstanding in various properties. Si x Sb 100−x shows a much better data retention as compared with Ge 2 Sb 2 Te 5 . The density change for Si 10 Sb 90 and Si 16 Sb 84 is only about 3% and 3.8%, respectively. The failure times for Si 10 Sb 90 and Si 16 Sb 84 are about 10 3 and 10 6 times longer than that of Ge 2 Sb 2 Te 5 at 110 °C. The crystallization temperature of Si x Sb 100−x increases with silicon content within the material. Si x Sb 100−x materials are good candidates for the phase-change memory applications

  19. Matching Micro-Kernels to Modern Applications using Fine-Grained Memory Protection

    OpenAIRE

    Bryce , Ciaran; Muller , Gilles

    1995-01-01

    Scalable distributed systems, systems whose processing power remains proportional to the number of component processors, require a programming methodology where an application developer may take existing software modules and plug them together to form a new application. To allow mistrusting modules to interact, the underlying kernel support must offer protection barriers which do not impede performance. The wide-ranging nature of modern applications used on larger scale systems means that exi...

  20. Study on the nitrogen-doped W-Sb-Te material for phase change memory application

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Kun; Xia, Mengjiao; Ding, Keyuan; Ji, Xinglong [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Graduate University of the Chinese Academy of Sciences, Beijing 100080 (China); Rao, Feng, E-mail: fengrao@mail.com.ac.cn; Song, Zhitang; Wu, Liangcai; Liu, Bo; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Laboratory of Nanotechnology, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2014-04-28

    N doping is proposed to enlarge sensing margin of W{sub 0.08}(Sb{sub 2}Te){sub 0.92} based high-temperature phase-change memories (PCMs). The sensing margin is increased from 30 to 5 × 10{sup 3}, with an increase from 145 °C to 158 °C in data retention. The grain size is reduced to 10 nm. The PCM based on N-W{sub 0.08}(Sb{sub 2}Te){sub 0.92} shows the fast operation speed of 30 ns and good cycling ability of >10{sup 3}. By X-ray photoelectron spectroscopy and ab initio calculation, the W atoms are suggested to locate in the Sb positions and interstices of the lattice. The W atoms in interstice will bond to N atoms during N doping.

  1. Application of Item Response Theory to Tests of Substance-related Associative Memory

    Science.gov (United States)

    Shono, Yusuke; Grenard, Jerry L.; Ames, Susan L.; Stacy, Alan W.

    2015-01-01

    A substance-related word association test (WAT) is one of the commonly used indirect tests of substance-related implicit associative memory and has been shown to predict substance use. This study applied an item response theory (IRT) modeling approach to evaluate psychometric properties of the alcohol- and marijuana-related WATs and their items among 775 ethnically diverse at-risk adolescents. After examining the IRT assumptions, item fit, and differential item functioning (DIF) across gender and age groups, the original 18 WAT items were reduced to 14- and 15-items in the alcohol- and marijuana-related WAT, respectively. Thereafter, unidimensional one- and two-parameter logistic models (1PL and 2PL models) were fitted to the revised WAT items. The results demonstrated that both alcohol- and marijuana-related WATs have good psychometric properties. These results were discussed in light of the framework of a unified concept of construct validity (Messick, 1975, 1989, 1995). PMID:25134051

  2. Shape Memory Alloy connectors for Ultra High Vacuum applications: a breakthrough for accelerator technologies

    CERN Document Server

    AUTHOR|(CDS)2091326; Garion, Cedric

    Beam-pipe coupling in particle accelerators is nowadays provided by metallic flanges that are tightly connected by several screws or heavy collars. Their installation and dismounting in radioactive areas contribute to the radiation doses received by the technical personnel. Owing to the increased proton-beam intensity and luminosity of the future High-Luminosity LHC (HL-LHC), radioactivity in some specific zones will be significantly higher than in the present LHC; the presence of the technical staff in these areas will be strictly controlled and minimized. Remote interventions are being considered, too. Shape Memory Alloys (SMAs) offer a unique possibility to generate tight connections and fast clamping/unclamping by remotely changing the temperature of the junction unit. In fact, SMAs exhibit unique strain and stress recovery capabilities which are related to reversible phase transition mechanisms, induced thermally or mechanically. In this PhD work, a novel Ultra-High Vacuum (UHV) coupling system based on ...

  3. Progress of application, research and development, and design guidelines for shape memory alloy devices for cultural heritage structures in Italy

    Science.gov (United States)

    Castellano, Maria G.; Indirli, Maurizio; Martelli, Alessandro

    2001-07-01

    A wide ranging R&D Project (ISTECH) on validation and application of the Innovative Antiseismic Techniques (IATs) for the restoration of Cultural Heritage Structures (CUHESs), especially masonry buildings, based on the Shape Memory Alloys (SMAs), has been funded by the European Commission (EC), in the framework of the Environment and Climate RTD Programme. Because Traditional Restoration Techniques (TRTs) have sometimes proved inadequate in avoiding collapses and often too invasive, the use of superelastic SMA Devices (SMADs) has been developed. Theoretical and numerical studies, as well as intensive testing of material specimens, devices, structural models and in situ campaigns, show that SMADs can substantially increase the stability of masonry CUHESs exposed to an earthquake. Different SMAD types have been investigated to fulfil different structural needs and they can be custom designed taking into account each monument's characteristics. The successful results of the research and its exploitation led to important applications in Italy: the S. Giorgio Church Bell-Tower, located at Trignano, S. Martino in Rio, Reggio Emilia, damaged by the 15th October 1996 earthquake, the transept tympana of the S. Francesco Basilica in Assisi and the S. Feliciano Cathedral façade in Foligno, both heavily damaged by the September 1997 earthquake. In addition, further studies and applications of SMAD technology are foreseen in Italy in the next future, in the framework of Italian and European research projects and proposals.

  4. Memory architecture

    NARCIS (Netherlands)

    2012-01-01

    A memory architecture is presented. The memory architecture comprises a first memory and a second memory. The first memory has at least a bank with a first width addressable by a single address. The second memory has a plurality of banks of a second width, said banks being addressable by components

  5. Investigation of resistive switching in barium strontium titanate thin films for memory applications

    International Nuclear Information System (INIS)

    Shen, Wan

    2010-01-01

    Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO 3 (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10 4 times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO x layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the observation of

  6. Investigation of resistive switching in barium strontium titanate thin films for memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Wan

    2010-11-17

    Resistive random access memory (RRAM) has attracted much attention due to its low power consumption, high speed operation, non-readout disturbance and high density integration potential and is regarded as one of the most promising candidates for the next generation non-volatile memory. The resistive switching behavior of Mn-doped BaSrTiO{sub 3} (BST) thin films with different crystalline properties was investigated within this dissertation. The laser fluence dependence was checked in order to optimize the RRAM properties. Although the film epitaxial quality was improved by reducing the laser energy during deposition process, the yields fluctuated and only 3% RRAM devices with highest epitaxial quality of BST film shows resistive switching behavior instead of 67% for the samples with worse film quality. It gives a clue that the best thin film quality does not result in the best switching performance, and it is a clear evidence of the importance of the defects to obtain resistive switching phenomena. The bipolar resistive switching behavior was studied with epitaxial BST thin films on SRO/STO. Compared to Pt top electrode, the yield, endurance and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop of the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10{sup 4} times without any obvious degradation. The resistance degradation for devices with Pt top electrode may result from the diffusion of oxygen along the Pt grain boundaries during cycling whereas for W top electrode the reversible oxidation and reduction of a WO{sub x} layer, present at the interface between W top electrode and BST film, attributes to the improved switching property. The transition from bipolar to unipolar resistive switching in polycrystalline BST thin films was observed. A forming process which induces a metallic low resistance state is prerequisite for the

  7. Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

    International Nuclear Information System (INIS)

    Kim, Hee-Dong; Yun, Min Ju; Kim, Tae Geun

    2014-01-01

    In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity

  8. DESIGN AND ANALYSIS OF STATIC RANDOM ACCESS MEMORY BY SCHMITT TRIGGER TOPOLOGY FOR LOW VOLTAGE APPLICATIONS

    Directory of Open Access Journals (Sweden)

    RUKKUMANI V.

    2016-12-01

    Full Text Available Aggressive scaling of transistor dimensions with each technology generation has resulted an increased integration density and improved device performance at the expense of increased leakage current. The Supply voltage scaling is an effective way of reducing dynamic as well as leakage power consumption. However the sensitivity of the circuit parameters increases with reduction of the supply voltage. SRAM bit- cells utilizing minimum sized transistors are susceptible to various random process variations. The Schmitt Trigger based operation gives better readconstancy as well as superior write-ability compared to the standard bitcell configurations. The proposed Schmitt Trigger based bitcells integrate a built-in feedback mechanism make the process with high tolerance. In this paper an obsolete design of a differential sensing Static Random Access Memory (SRAM bit cells for ultralow-power and ultralow-area Schmitt trigger operation is introduced. The ST bit cells incorporate a built-in feedback mechanism, provided by separate control signal if the feedback is given by the internal nodes, achieving process variation tolerance that must be used for future nano-scaled technology nodes. In this we proposed 32nm technology for designing 10T SRAM cell using Microwind.Total power about 30% is reduced due to 32 nm technology as compared to 65 nm technlology.

  9. SAR analysis of a needle type applicator made from a shape memory alloy using 3-D anatomical human head model

    International Nuclear Information System (INIS)

    Kubo, Mitsunori; Mimoto, Naoki; Hirashima, Taku; Morita, Emi; Shindo, Yasuhiro; Kato, Kazuo; Takahashi, Hideaki; Uzuka, Takeo; Fujii, Yukihiko

    2009-01-01

    This paper describes the possibility of a new heating method with a needle applicator made of a shape memory alloy (SMA) to expand the heating area for interstitial brain tumor hyperthermia treatments. The purpose of the study described here is to show the capability of the method to expand a defined heating region with the developed three-dimensional (3-D) anatomical human head model using the finite element method (FEM). One major disadvantage of radiofrequency (RF) interstitial hyperthermia treatment is that this heating method has a small heating area. To overcome this problem, a new type of needle made of a SMA was developed. The specific absorption rate (SAR) distributions of this proposed method, when applied to the 3-D anatomical human head model reconstructed from two-dimensional (2-D) MRI and X-ray CT images, were calculated with computer simulations. The calculated SAR distributions showed no unexpected hot spots within the model. The heated area was localized around the tumor. These results suggest that the proposed heating method using the SMA needle applicator and the developed method for reconstructing a 3-D anatomical human head model are capable of being used for invasive brain tumor hyperthermia treatments. (author)

  10. Microelectronics and nanoelectronics trends, and applications to HEP instrumentation

    CERN Multimedia

    CERN. Geneva

    2004-01-01

    Lecture 1 : Microelectronics and HEP instrumentation CMOS technology has been the leading technology in microelectronics for more that 30 years thanks to its outstanding capability to miniaturization and low power consumption. A brief history of the microelectronics semiconductor industry is presented with applications for LEP and LHC experiments. Lecture 2: Future trends in microelectronics and nanoelectronics Trends in miniaturization point to the fabrication of ULSI nanoscale CMOS circuits by the end of the decade. Device issues and quantum effects in nanoscale MOS transistor will be discussed. Beyond CMOS technology, several technology avenues based on nanotechnology are under investigation. We will present some promising nanoelectronic devices and circuits based on Single Electron Tunneling (SET) transistor, nanowire, quantum dot and carbon nanotubes. Lecture 3: Monolithic pixel detectors Microvertex detectors for particle physics experiments currently uses hybrid silicon pixel detector. Novel emerging m...

  11. The future of memory

    Science.gov (United States)

    Marinella, M.

    In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

  12. Toxicity assessment and selective leaching characteristics of Cu-Al-Ni shape memory alloys in biomaterials applications.

    Science.gov (United States)

    Chang, Shih-Hang; Chen, Bor-Yann; Lin, Jin-Xiang

    2016-04-06

    Cu-Al-Ni shape memory alloys (SMAs) possess two-way shape memory effects, superelasticity, and damping capacity. Nonetheless, Cu-Al-Ni SMAs remain promising candidates for use in biomedical applications, as they are more economical and machinable than other SMAs. Ensuring the biocompatibility of Cu-Al-Ni SMAs is crucial to their development for biomedical applications. Therefore, this study aimed to assess the toxicity of Cu-Al-Ni SMAs using a Probit dose-response model and augmented simplex design. In this study, the effects of Cu2+, Al3+ and Ni2+ metal ions on bacteria (Escherichia coli DH5α) using Probit dose-response analysis and augmented simplex design to assess the actual toxicity of the Cu-Al-Ni SMAs. Extraction and repetition of Escherichia coli DH5α solutions with high Cu2+ ion concentrations and 30-hour incubation demonstrated that Escherichia coli DH5α was able to alter its growth mechanisms in response to toxins. Metal ions leached from Cu-Al-Ni SMAs appeared in a multitude of compositions with varying degrees of toxicity, and those appearing close to a saddle region identified in the contour plot of the augmented simplex model were identified as candidates for elevated toxicity levels. When the Cu-13.5Al-4Ni SMA plate was immersed in Ringer's solution, the selective leaching rate of Ni2+ ions far exceeded that of Cu2+ and Al3+. The number of Cu2+, Al3+ and Ni2+ ions leached from Cu-Al-Ni SMAs increased with immersion time; however, at higher ratios, toxicity interactions among the metal ions had the effect of gradually reducing overall toxicity levels with regard to Escherichia coli DH5α. The quantities of Cu2+, Al3+ and Ni2+ ions leached from the Cu-13.5Al-4Ni SMA plate increased with immersion time, the toxicity interactions associated with these compositions reduced the actual toxicity to Escherichia coli DH5α.

  13. An integrated lithography concept with application on 45-nm ½ pitch flash memory devices

    Science.gov (United States)

    Dusa, Mircea; Engelen, Andre; Finders, Jo

    2006-03-01

    It is well accepted to judge imaging capability of an exposure tool primarily on printing equal line-spaces, at a minimum ½ pitch. Further on, combining line-space minimum ½ pitches with scanner maximum NA, defines the process k I. From a lithographer viewpoint, flash memory device is the perfect candidate to achieve lowest k I lithography for a given NA. This is justified by flash layout specific, with regular and relative simple 1-D topology of the critical layers that look like line-space gratings. In reality, flash layout presents a subtle topology and cannot be considered a simple 1-D line-space problem. Uniqueness to flash layout is the array-end zones, where pattern regularity is broken up by features with dimensions and separation of n x ½ pitch, where n is an integer number that we used in this work to manipulate litho process latitudes. Integrated lithography concept seeks to tweak flash pattern details and tune it with scanner control parameters. We introduce feature-center placement through focus and dose as the metric to characterize a cross-coupling phenomena occurring between adjacent features located at array-end of typical flash poly wordline layer. We comparedthe metric behavior with usual litho process window parameters and identified interactions with scanner CDU control parameters. We show how feature-center placement errors are direct functions of optical and physical characteristics of mask materials, attenuated PSM or binary, and of layout array-end topology. Imaging at extreme low-k I, effects from layout specifics and mask materials are best characterized by full vector, rigorous EM simulation, instead of scalar approach, typically used for OPC treatment. Predicted CDU performance of 1.2NA scanner, based on integrated lithography concept, matched very well the experimental results in printing 45nm ½ pitch flash wordline layer. Results show that 1.2NA scanner, operating at 0.28 k I could be an effective lithography solution for 45nm

  14. Memory Corruption Mitigations and Their Implementation Progress in Third-Party Windows Applications

    Science.gov (United States)

    2012-09-01

    coverage in the news, which helped the public recognize the importance of computers in everyday life and, more importantly, the challenges in securing...Media Players Winamp, VLC Media Player, Quicktime Player, iTunes, Real Player Instant Messaging Applications mIRC, Yahoo Messenger, AIM, Nimbuzz...as cell phones and tablets, may boost this ratio in the upcoming years. In such a highly connected world, it is becoming more and more challenging

  15. Concept of dynamic memory in economics

    Science.gov (United States)

    Tarasova, Valentina V.; Tarasov, Vasily E.

    2018-02-01

    In this paper we discuss a concept of dynamic memory and an application of fractional calculus to describe the dynamic memory. The concept of memory is considered from the standpoint of economic models in the framework of continuous time approach based on fractional calculus. We also describe some general restrictions that can be imposed on the structure and properties of dynamic memory. These restrictions include the following three principles: (a) the principle of fading memory; (b) the principle of memory homogeneity on time (the principle of non-aging memory); (c) the principle of memory reversibility (the principle of memory recovery). Examples of different memory functions are suggested by using the fractional calculus. To illustrate an application of the concept of dynamic memory in economics we consider a generalization of the Harrod-Domar model, where the power-law memory is taken into account.

  16. Music application alleviates short-term memory impairments through increasing cell proliferation in the hippocampus of valproic acid-induced autistic rat pups.

    Science.gov (United States)

    Lee, Sung-Min; Kim, Bo-Kyun; Kim, Tae-Woon; Ji, Eun-Sang; Choi, Hyun-Hee

    2016-06-01

    Autism is a neurodevelopmental disorder and this disorder shows impairment in reciprocal social interactions, deficits in communication, and restrictive and repetitive patterns of behaviors and interests. The effect of music on short-term memory in the view of cell proliferation in the hippocampus was evaluated using valproic acid-induced autistic rat pups. Animal model of autism was made by subcutaneous injection of 400-mg/kg valproic acid into the rat pups on the postnatal day 14. The rat pups in the music-applied groups were exposed to the 65-dB comfortable classic music for 1 hr once a day, starting postnatal day 15 and continued until postnatal day 28. In the present results, short-term memory was deteriorated by autism induction. The numbers of 5-bromo-2'-deoxyridine (BrdU)-positive, Ki-67-positive, and doublecortin (DCX)-positive cells in the hippocampal dentate gyrus were decreased by autism induction. Brain-derived neurotrophic factor (BDNF) and tyrosine kinase B (TrkB) expressions in the hippocampus were also suppressed in the autistic rat pups. Music application alleviated short-term memory deficits with enhancing the numbers of BrdU-positive, Ki-67-positive, and DCX-positive cells in the autistic rat pups. Music application also enhanced BDNF and TrkB expressions in the autistic rat pups. The present study show that application of music enhanced hippocampal cell proliferation and alleviated short-term memory impairment through stimulating BDNF-TrkB signaling in the autistic rat pups. Music can be suggested as the therapeutic strategy to overcome the autism-induced memory deficits.

  17. Operator theory and its applications in memory of V. B. Lidskii (1924-2008)

    CERN Document Server

    Levitin, Michael

    2010-01-01

    This book is a collection of articles devoted to the theory of linear operators in Hilbert spaces and its applications. The subjects covered range from the abstract theory of Toeplitz operators to the analysis of very specific differential operators arising in quantum mechanics, electromagnetism, and the theory of elasticity; the stability of numerical methods is also discussed. Many of the articles deal with spectral problems for not necessarily selfadjoint operators. Some of the articles are surveys outlining the current state of the subject and presenting open problems.

  18. Micromagnetic and magneto-transport simulations of nanodevices based on MgO tunnel junctions for memory and sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Z. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Silva, A.V. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Instituto Superior Tecnico (IST), Av. Rovisco Pais, 1000-029 Lisboa (Portugal); Leitao, D.C., E-mail: dleitao@inesc-mn.pt [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Ferreira, R. [International Iberian Nanotechnology Laboratory (INL), Av. Mestre Jose Veiga, 4715-31 Braga (Portugal); Cardoso, S.; Freitas, P.P. [INESC-MN and IN, Rua Alves Redol 9, 1000-029 Lisboa (Portugal); Instituto Superior Tecnico (IST), Av. Rovisco Pais, 1000-029 Lisboa (Portugal)

    2014-02-15

    This work provides a systematic simulation study of magnetic tunnel junction (MTJ) nanodevices behavior, consisting of a multilayered stack incorporating an in-plane CoFeB free layer and a synthetic antiferromagnetic CoFe-based pinned layer, and including exchange and interlayer couplings. A finite element tool is used to simulate both the magnetic and magneto-transport behaviors of these MTJ nanopillars with distinct geometries, namely circles with diameter ranging from 20 nm up to 250 nm and ellipses with aspect ratios of 1/2, 1/3 and 1/5, corresponding to sizes from 20×40 nm{sup 2} up to 50×250 nm{sup 2}. This study envisages two clear applications for nanopillars: memory and sensor devices. We address the impact of the nanopillar size on the coercivity and saturation field, as figures of merit for device performance. In particular a competitive sensitivity of 0.15%/Oe is envisaged for sensors with a size of 50×100 nm{sup 2}. Our results provide a validation of this simulation method as a expedite tool to assist the nanofabrication process.

  19. Model-assisted template extraction SRAF application to contact holes patterns in high-end flash memory device fabrication

    Science.gov (United States)

    Seoud, Ahmed; Kim, Juhwan; Ma, Yuansheng; Jayaram, Srividya; Hong, Le; Chae, Gyu-Yeol; Lee, Jeong-Woo; Park, Dae-Jin; Yune, Hyoung-Soon; Oh, Se-Young; Park, Chan-Ha

    2018-03-01

    Sub-resolution assist feature (SRAF) insertion techniques have been effectively used for a long time now to increase process latitude in the lithography patterning process. Rule-based SRAF and model-based SRAF are complementary solutions, and each has its own benefits, depending on the objectives of applications and the criticality of the impact on manufacturing yield, efficiency, and productivity. Rule-based SRAF provides superior geometric output consistency and faster runtime performance, but the associated recipe development time can be of concern. Model-based SRAF provides better coverage for more complicated pattern structures in terms of shapes and sizes, with considerably less time required for recipe development, although consistency and performance may be impacted. In this paper, we introduce a new model-assisted template extraction (MATE) SRAF solution, which employs decision tree learning in a model-based solution to provide the benefits of both rule-based and model-based SRAF insertion approaches. The MATE solution is designed to automate the creation of rules/templates for SRAF insertion, and is based on the SRAF placement predicted by model-based solutions. The MATE SRAF recipe provides optimum lithographic quality in relation to various manufacturing aspects in a very short time, compared to traditional methods of rule optimization. Experiments were done using memory device pattern layouts to compare the MATE solution to existing model-based SRAF and pixelated SRAF approaches, based on lithographic process window quality, runtime performance, and geometric output consistency.

  20. MoSbTe for high-speed and high-thermal-stability phase-change memory applications

    Science.gov (United States)

    Liu, Wanliang; Wu, Liangcai; Li, Tao; Song, Zhitang; Shi, Jianjun; Zhang, Jing; Feng, Songlin

    2018-04-01

    Mo-doped Sb1.8Te materials and electrical devices were investigated for high-thermal-stability and high-speed phase-change memory applications. The crystallization temperature (t c = 185 °C) and 10-year data retention (t 10-year = 112 °C) were greatly enhanced compared with those of Ge2Sb2Te5 (t c = 150 °C, t 10-year = 85 °C) and pure Sb1.8Te (t c = 166 °C, t 10-year = 74 °C). X-ray diffraction and transmission electron microscopy results show that the Mo dopant suppresses crystallization, reducing the crystalline grain size. Mo2.0(Sb1.8Te)98.0-based devices were fabricated to evaluate the reversible phase transition properties. SET/RESET with a large operation window can be realized using a 10 ns pulse, which is considerably better than that required for Ge2Sb2Te5 (∼50 ns). Furthermore, ∼1 × 106 switching cycles were achieved.

  1. Memory-cenric video processing

    NARCIS (Netherlands)

    Beric, A.; Meerbergen, van J.; Haan, de G.; Sethuraman, R.

    2008-01-01

    This work presents a domain-specific memory subsystem based on a two-level memory hierarchy. It targets the application domain of video post-processing applications including video enhancement and format conversion. These applications are based on motion compensation and/or broad class of content

  2. Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

    Science.gov (United States)

    Wang, Lai-Guo; Cao, Zheng-Yi; Qian, Xu; Zhu, Lin; Cui, Da-Peng; Li, Ai-Dong; Wu, Di

    2017-02-22

    Al 2 O 3 - or HfO 2 -based nanocomposite structures with embedded CoPt x nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPt x NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPt x NCs, ALD-derived Pt/oxide/100 cycle-CoPt x NCs/TiN/SiO 2 /Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10 2 ) of OFF/ON states, better switching endurance up to 10 4 cycles, and longer data retention over 10 5 s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPt x NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPt x NCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPt x NCs can effectively improve the formation of conducting filaments due to the CoPt x NC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.

  3. MEMORY MODULATION

    Science.gov (United States)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive evidence from both animal and human research indicates that emotionally significant experiences activate hormonal and brain systems that regulate the consolidation of newly acquired memories. These effects are integrated through noradrenergic activation of the basolateral amygdala which regulates memory consolidation via interactions with many other brain regions involved in consolidating memories of recent experiences. Modulatory systems not only influence neurobiological processes underlying the consolidation of new information, but also affect other mnemonic processes, including memory extinction, memory recall and working memory. In contrast to their enhancing effects on consolidation, adrenal stress hormones impair memory retrieval and working memory. Such effects, as with memory consolidation, require noradrenergic activation of the basolateral amygdala and interactions with other brain regions. PMID:22122145

  4. Memory Matters

    Science.gov (United States)

    ... Staying Safe Videos for Educators Search English Español Memory Matters KidsHealth / For Kids / Memory Matters What's in ... of your complex and multitalented brain. What Is Memory? When an event happens, when you learn something, ...

  5. Influence of music on memory and education, and the application of its underlying principles to acupuncture.

    Science.gov (United States)

    Seki, H

    1983-01-01

    The interrelations among learning, brain waves, music and the relief of pain by acupuncture are discussed from the standpoint of an educator, who has some practical experience in suggestive-accelerative learning and teaching (S.A.L.T.). Through the diverse fields of science, e.g. educational psychology, physiology, electronics and acoustics, the principal law governing the l/f fluctuations (where f is frequency), or the inverse frequency distribution of the power spectrum, seems to play an important role in their phenomenological mechanism. The author totally explained in this paper such relations and he arranged the related phenomena into physical, physiological, psychological and pedagogical fields. Finally, he referred to an interesting example of the application of l/f fluctuations to the relief of pain by acupuncture.

  6. Conference on Inequalities and Applications : Dedicated to the Memory of Wolfgang Walter

    CERN Document Server

    Gilányi, Attila; Losonczi, László; Plum, Michael

    2012-01-01

    Inequalities arise as an essential component in various mathematical areas. Besides forming a highly important collection of tools, e.g. for proving analytic or stochastic theorems or for deriving error estimates in numerical mathematics, they constitute a challenging research field of their own. Inequalities also appear directly in mathematical models for applications in science, engineering, and economics. This edited volume covers divers aspects of this fascinating field. It addresses classical inequalities related to means or to convexity as well as inequalities arising in the field of ordinary and partial differential equations, like Sobolev or Hardy-type inequalities, and inequalities occurring in geometrical contexts. Within the last five decades, the late Wolfgang Walter has made great contributions to the field of inequalities. His book on differential and integral inequalities was a real breakthrough in the 1970’s and has generated a vast variety of further research in this field. He also organize...

  7. Lowering data retention voltage in static random access memory array by post fabrication self-improvement of cell stability by multiple stress application

    Science.gov (United States)

    Mizutani, Tomoko; Takeuchi, Kiyoshi; Saraya, Takuya; Kobayashi, Masaharu; Hiramoto, Toshiro

    2018-04-01

    We propose a new version of the post fabrication static random access memory (SRAM) self-improvement technique, which utilizes multiple stress application. It is demonstrated that, using a device matrix array (DMA) test element group (TEG) with intrinsic channel fully depleted (FD) silicon-on-thin-buried-oxide (SOTB) six-transistor (6T) SRAM cells fabricated by the 65 nm technology, the lowering of data retention voltage (DRV) is more effectively achieved than using the previously proposed single stress technique.

  8. Applications of Singh-Rajput Mes in Recall Operations of Quantum Associative Memory for a Two- Qubit System

    Science.gov (United States)

    Singh, Manu Pratap; Rajput, B. S.

    2016-03-01

    Recall operations of quantum associative memory (QuAM) have been conducted separately through evolutionary as well as non-evolutionary processes in terms of unitary and non- unitary operators respectively by separately choosing our recently derived maximally entangled states (Singh-Rajput MES) and Bell's MES as memory states for various queries and it has been shown that in each case the choices of Singh-Rajput MES as valid memory states are much more suitable than those of Bell's MES. it has been demonstrated that in both the types of recall processes the first and the fourth states of Singh-Rajput MES are most suitable choices as memory states for the queries `11' and `00' respectively while none of the Bell's MES is a suitable choice as valid memory state in these recall processes. It has been demonstrated that all the four states of Singh-Rajput MES are suitable choice as valid memory states for the queries `1?', `?1', `?0' and `0?' while none of the Bell's MES is suitable choice as the valid memory state for these queries also.

  9. A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

    Science.gov (United States)

    Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2018-04-09

    As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 10 6 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

  10. Preliminary Laboratory-scale Study Temperature Shape Memory Alloy for Sensor Application

    International Nuclear Information System (INIS)

    Tippayakul, C.; Petchrak, A.; Wetchagarun, S.

    2014-01-01

    One of the most widespread uses of radiotracers in the industrial applications is the leak detection of the systems. This technique can be applied, for example, to detect leak in heat exchangers or along buried industrial pipelines. Thailand Institute of Nuclear Technology (TINT) is currently conducting R&D on this technique aiming to promote the radiotracer use in Thailand. In this paper, a preliminary study of the leak detection using radiotracer on laboratory-scale was presented. Br-82 was selected for this work due to its chemical property, its suitable half-life and its on-site availability. The radiotracer in form of NH4Br powder was irradiated in Thai Research Reactor (TRR-1/M1) to produce Br-82. The irradiated target was subsequently prepared in the form of aqueous solution in a hot cell ready for injection into the experimental system as the radiotracer. A relatively simplified experimental setup was used with three NaI detectors being placed along the pipelines to measure system flow rate and to detect the leakage from the piping system. The results obtained from the radiotracer technique were compared to those measured by other methods. It is found that the flow rate obtained from the radiotracer technique agreed well with the one obtained from the flow meter. The leak rate result, however, showed discrepancy between results obtained from two different measuring methods indicating that the simplified experimental setup was not adequate for the leak rate study. Hence, further study with more elaborate experimental setup was required before applying this technique in the actual industrial system.

  11. Application of research findings and summary of research needs: Bud Britton Memorial Symposium on Metabolic Disorders of Feedlot Cattle.

    Science.gov (United States)

    Galyean, M L; Eng, K S

    1998-01-01

    Updated research findings with acidosis, feedlot bloat, liver abscesses, and sudden death syndromes were presented at the Bud Britton Memorial Symposium on Metabolic Disorders of Feedlot Cattle. Possible industry applications include the need to establish guidelines for use of clostridial vaccines in feedlot cattle, further assessment of the relationship between acidosis and polioencephalomalacia, examination of the effects of various ionophores on the incidence of metabolic disorders, and evaluation of the effects of feed bunk management and limit- and restricted-feeding programs on the incidence of metabolic disorders. A multidisciplinary approach among researchers, consulting nutritionists and veterinarians, and feedlot managers will be required for effective progress in research and in the application of research findings. Areas suggested for further research include 1) assessment of feed consumption patterns and social behavior of cattle in large-pen, feedlot settings; 2) evaluation of the relationship between feed intake management systems (feed bunk management programs, limit- and programmed-feeding) and the incidence of metabolic disorders, including delineation of the role of variability in feed intake in the etiology of such disorders; 3) efforts to improve antemortem and postmortem diagnosis, and to establish standardized regional or national epidemiological databases for various metabolic disorders; 4) ascertaining the accuracy of diagnosis of metabolic disorders and determining the relationship of previous health history of animals to the incidence of metabolic disorders; 5) further defining ruminal and intestinal microbiology as it relates to metabolic disorders and deeper evaluation of metabolic changes that occur with such disorders; 6) continued appraisal of the effects of grain processing and specific feed ingredients and nutrients on metabolic disorders, and development of new feed additives to control or prevent these disorders; and 7

  12. Progress In Optical Memory Technology

    Science.gov (United States)

    Tsunoda, Yoshito

    1987-01-01

    More than 20 years have passed since the concept of optical memory was first proposed in 1966. Since then considerable progress has been made in this area together with the creation of completely new markets of optical memory in consumer and computer application areas. The first generation of optical memory was mainly developed with holographic recording technology in late 1960s and early 1970s. Considerable number of developments have been done in both analog and digital memory applications. Unfortunately, these technologies did not meet a chance to be a commercial product. The second generation of optical memory started at the beginning of 1970s with bit by bit recording technology. Read-only type optical memories such as video disks and compact audio disks have extensively investigated. Since laser diodes were first applied to optical video disk read out in 1976, there have been extensive developments of laser diode pick-ups for optical disk memory systems. The third generation of optical memory started in 1978 with bit by bit read/write technology using laser diodes. Developments of recording materials including both write-once and erasable have been actively pursued at several research institutes. These technologies are mainly focused on the optical memory systems for computer application. Such practical applications of optical memory technology has resulted in the creation of such new products as compact audio disks and computer file memories.

  13. A histogram memory plug-in board for IBM-PC based nuclear pulse height analysis applications

    International Nuclear Information System (INIS)

    Behere, Anita; Ghodgaonkar, M.D.

    1989-01-01

    The histogram memory PC plug-in board has 8K x 24 dual ported memory with access from PC as well as from on board data acquisition logic. The arbitration control logic monitors the memory access requests from both the sources and honours them on first come first served basis. The data acquisition logic takes only 840 ns. to perform Read-Modify-Write memory operation. The data acquisition logic incorporates ADC interface logic for connecting to a NIM ADC which is normally housed in a NIM system along with other required front-end processing modules. Two interval timers are provided on the board. One of them provides Live Time/Clock Time counting and the other generates a 200 ms interrupt which is used for live spectrum display. The board is fully supported with system and data processing software developed in Turbo Pascal. (author)

  14. Magnetron sputtered Cu{sub 3}N/NiTiCu shape memory thin film heterostructures for MEMS applications

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Navjot; Choudhary, Nitin [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Goyal, Rajendra N. [Indian Institute of Technology, Roorkee, Department of Chemistry (India); Viladkar, S. [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India); Matai, I.; Gopinath, P. [Indian Institute of Technology, Roorkee, Centre for Nanotechnology (India); Chockalingam, S. [Indian Institute of Technology, Guwahati, Department of Biotechnology (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Indian Institute of Technology Roorkee, Roorkee, Functional Nanomaterials Research Lab, Department of Physics and Centre of Nanotechnology (India)

    2013-03-15

    In the present study, for the first time, Cu{sub 3}N/NiTiCu/Si heterostructures were successfully grown using magnetron sputtering technique. Nanocrystalline copper nitride (Cu{sub 3}N with thickness {approx}200 nm) thin films and copper nanodots were subsequently deposited on the surface of 2-{mu}m-thick NiTiCu shape memory thin films in order to improve the surface corrosion and nickel release properties of NiTiCu thin films. Interestingly, the phase transformation from martensite phase to austenite phase has been observed in Cu{sub 3}N/NiTiCu heterostructures with corresponding change in texture and surface morphology of top Cu{sub 3}N films. Field emission scanning electron microscopy and atomic force microscope images of the heterostructures reveals the formation of 20-nm-sized copper nanodots on NiTiCu surface at higher deposition temperature (450 Degree-Sign C) of Cu{sub 3}N. Cu{sub 3}N passivated NiTiCu films possess low corrosion current density with higher corrosion potential and, therefore, better corrosion resistance as compared to pure NiTiCu films. The concentration of Ni released from the Cu{sub 3}N/NiTiCu samples was observed to be much less than that of pure NiTiCu film. It can be reduced to the factor of about one-ninth after the surface passivation resulting in smooth, homogeneous and highly corrosion resistant surface. The antibacterial and cytotoxicity of pure and Cu{sub 3}N coated NiTiCu thin films were investigated through green fluorescent protein expressing E. coli bacteria and human embryonic kidney cells. The results show the strong antibacterial property and non cytotoxicity of Cu{sub 3}N/NiTiCu heterostructure. This work is of immense technological importance due to variety of BioMEMS applications.

  15. Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications

    International Nuclear Information System (INIS)

    Fu Jing; Shen Xiang; Nie Qiuhua; Wang Guoxiang; Wu Liangcai; Dai Shixun; Xu Tiefeng; Wang, R.P.

    2013-01-01

    Highlights: ► Mg-doped Ge 2 Sb 2 Te 5 (GST) phase change films with higher resistance and better thermal stability have been proposed. ► The increase of Mg content result in an enhancement in crystallization temperature, activation energy and electrical resistance. ► The proper Mg addition in GST can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase. ► The formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhancement thermal stability in Mg-doped GST films. - Abstract: Mg-doped Ge 2 Sb 2 Te 5 (GST) films with different Mg doping concentrations have been prepared, and their crystallization behavior, structure and electrical properties have been systematically investigated for phase-change memory applications. The results show that the addition of Mg into GST films could result in an enhancement in crystallization temperature, activation energy and electrical resistance compared with the conventional GST films, indicating that a good amorphous thermal stability. On the other hand, the proper Mg concentration ranging from 13.6 to 31.1 at.% can lead to a one-step crystallization process from amorphous to faced-centered cubic (fcc) phase and suppress the formation of the hexagonal close-packed (hcp) crystalline phase. X-ray photoelectron spectra (XPS) further confirm that the formation of covalent Mg-Sb and Mg-Te bonds contribute to the enhanced thermal stability in Mg-doped GST films.

  16. Conducting atomic force microscopy studies on doped CulnO2 thin films for resistive memory device applications

    International Nuclear Information System (INIS)

    Mehta, B.R.

    2009-01-01

    Full text: Delafosite thin films have interesting structural, optical and electronic properties due to the highly anisotropic crystal structure and possibility of bipolar conductivity. In this presentation, optical, structural and electrical properties of Sn (n type) and Ca (p type) doped CulnO 2 layers grown by rf magnetron sputtering technique will be discussed. Depending on doping and deposition temperature, these films show nanocolumnar structure with (110) and (006) preferred orientations. The observed decrease in activation energy from 0.9 eV to about 0.10 eV and a large decrease in conductivity from 2.11 x 10 -10 Scm -1 to 1.66 x 10 -1 Scm -1 on Sn doping has been explained due to the change in preferred orientation along with efficient doping. Our results show that crystallite orientation is the most important factor controlling the electrical conduction in delafossite thin films. The anisotropy of electrical conduction along (006) and (110) directions in tin doped samples has been further established using conducting atomic force microscopy (CAFM) measurements. The CAFM measurements shows the presence of nanoconducting region when the current flow direction is aligned along the BO 6 layer and complete absence of conducting regions when the current direction is perpendicular to the film surface. Resistive memory devices based on Sn and Ca doped CulnO 2 films show stable and reproducible 'on' and 'off' states. CAFM measurement on these devices carried out before and after 'forming' show the growth of nanoconducting filaments on the application of a threshold voltage. It is possible to control resistance in the 'on' and 'off' states and magnitude of the forming and switching voltages by controlling the doping concentration and crystallite orientation in CulnO 2 layers

  17. The effect of addition of various elements on properties of NiTi-based shape memory alloys for biomedical application

    Science.gov (United States)

    Kök, Mediha; Ateş, Gonca

    2017-04-01

    In biomedical applications, NiTi and NiTi-based alloys that show their shape memory effects at body temperature are preferred. In this study, the purpose is to produce NiTi and NiTi-based alloys with various chemical rates and electron concentrations and to examine their various physical properties. N45Ti55, Ni45Ti50Cr2.5Cu2.5, Ni48Ti51X (X=Mn, Sn, Co) alloys were produced in an arc melter furnace in this study. After the homogenization of these alloys, the martensitic phase transformation temperatures were determined with differential-scanner calorimeter. The transformation temperature was found to be below the 37 ° C (body temperature) in Ni45Ti50Cr2.5Cu2.5, Ni48Ti51X (X=Mn, Co) alloys; and the transformation temperature of the N45Ti55, Ni48Ti51Sn alloys was found to be over 37 ° C . Then, the micro and crystal structure analyses of the alloys were made, and it was determined that Ni45Ti50Cr2.5Cu2.5, Ni48Ti51X (X=Mn, Co) alloys, which were in austenite phase at room temperature, included B2 (NiTi) phase and Ti2Ni precipitation phase, and the alloys that were in the martensite phase at room temperature included B19ı (NiTi) phase and Ti2Ni phase. The common phase in both alloy groups is the Ti2Ni phase, and this type of phase is generally seen in NiTi alloys that are rich in titanium (Ti-rich).

  18. Shape memory alloys

    International Nuclear Information System (INIS)

    Kaszuwara, W.

    2004-01-01

    Shape memory alloys (SMA), when deformed, have the ability of returning, in certain circumstances, to their initial shape. Deformations related to this phenomenon are for polycrystals 1-8% and up to 15% for monocrystals. The deformation energy is in the range of 10 6 - 10 7 J/m 3 . The deformation is caused by martensitic transformation in the material. Shape memory alloys exhibit one directional or two directional shape memory effect as well as pseudoelastic effect. Shape change is activated by temperature change, which limits working frequency of SMA to 10 2 Hz. Other group of alloys exhibit magnetic shape memory effect. In these alloys martensitic transformation is triggered by magnetic field, thus their working frequency can be higher. Composites containing shape memory alloys can also be used as shape memory materials (applied in vibration damping devices). Another group of composite materials is called heterostructures, in which SMA alloys are incorporated in a form of thin layers The heterostructures can be used as microactuators in microelectromechanical systems (MEMS). Basic SMA comprise: Ni-Ti, Cu (Cu-Zn,Cu-Al, Cu-Sn) and Fe (Fe-Mn, Fe-Cr-Ni) alloys. Shape memory alloys find applications in such areas: automatics, safety and medical devices and many domestic appliances. Currently the most important appears to be research on magnetic shape memory materials and high temperature SMA. Vital from application point of view are composite materials especially those containing several intelligent materials. (author)

  19. Sparse distributed memory overview

    Science.gov (United States)

    Raugh, Mike

    1990-01-01

    The Sparse Distributed Memory (SDM) project is investigating the theory and applications of massively parallel computing architecture, called sparse distributed memory, that will support the storage and retrieval of sensory and motor patterns characteristic of autonomous systems. The immediate objectives of the project are centered in studies of the memory itself and in the use of the memory to solve problems in speech, vision, and robotics. Investigation of methods for encoding sensory data is an important part of the research. Examples of NASA missions that may benefit from this work are Space Station, planetary rovers, and solar exploration. Sparse distributed memory offers promising technology for systems that must learn through experience and be capable of adapting to new circumstances, and for operating any large complex system requiring automatic monitoring and control. Sparse distributed memory is a massively parallel architecture motivated by efforts to understand how the human brain works. Sparse distributed memory is an associative memory, able to retrieve information from cues that only partially match patterns stored in the memory. It is able to store long temporal sequences derived from the behavior of a complex system, such as progressive records of the system's sensory data and correlated records of the system's motor controls.

  20. Biocompatibility and corrosion behavior of the shape memory NiTi alloy in the physiological environments simulated with body fluids for medical applications

    International Nuclear Information System (INIS)

    Khalil-Allafi, Jafar; Amin-Ahmadi, Behnam; Zare, Mehrnoush

    2010-01-01

    Due to unique properties of NiTi shape memory alloys such as high corrosion resistance, biocompatibility, super elasticity and shape memory behavior, NiTi shape memory alloys are suitable materials for medical applications. Although TiO 2 passive layer in these alloys can prevent releasing of nickel to the environment, high nickel content and stability of passive layer in these alloys are very debatable subjects. In this study a NiTi shape memory alloy with nominal composition of 50.7 atom% Ni was investigated by corrosion tests. Electrochemical tests were performed in two physiological environments of Ringer solution and NaCl 0.9% solution. Results indicate that the breakdown potential of the NiTi alloy in NaCl 0.9% solution is higher than that in Ringer solution. The results of Scanning Electron Microscope (SEM) reveal that low pitting corrosion occurred in Ringer solution compared with NaCl solution at potentiostatic tests. The pH value of the solutions increases after the electrochemical tests. The existence of hydride products in the X-ray diffraction analysis confirms the decrease of the concentration of hydrogen ion in solutions. Topographical evaluations show that corrosion products are nearly same in all samples. The biocompatibility tests were performed by reaction of mouse fibroblast cells (L929). The growth and development of cells for different times were measured by numbering the cells or statistics investigations. The figures of cells for different times showed natural growth of cells. The different of the cell numbers between the test specimen and control specimen was negligible; therefore it may be concluded that the NiTi shape memory alloy is not toxic in the physiological environments simulated with body fluids.

  1. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    International Nuclear Information System (INIS)

    Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

    2007-01-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

  2. Bipolar resistive switching properties of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} thin film for flexible memory applications

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Zhipeng; Zhu, Jun; Zhou, Yunxia; Liu, Xingpeng [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu (China)

    2018-01-15

    An Au/Ni/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Au flexible memory device fabricated on a polyethylene terephthalate substrate was studied for flexible resistive random access memory applications. A typical bipolar resistive switching behavior was revealed with an OFF/ON ratio of approximately 15. The reproducibility and uniformity were investigated using 100 repetitive write/erase cycles. The retention property did not degrade for up to 5 x 10{sup 4} s, and the resistive switching properties did not degrade even under bending conditions, which indicated good mechanical flexibility. The current-voltage characteristics of the memory device show a Poole-Frenkel emission conduction mechanism in the high-voltage region in the high-resistance state, while in the low-voltage region, the Ohmic contact and space charge limit current responded to the low-resistance state and high-resistance state, respectively. Combined with the conductance mechanism, the resistive switching behavior is attributed to conductive filaments forming and rupturing due to oxygen vacancies migrating under the external driving electric field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  3. Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

    Science.gov (United States)

    Khan, J.; Lingalugari, M.; Al-Amoody, F.; Jain, F.

    2013-11-01

    As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write" voltage.

  4. Properties of the block BFGS update and its application to the limited-memory block BNS method for unconstrained minimization

    Czech Academy of Sciences Publication Activity Database

    Vlček, Jan; Lukšan, Ladislav

    Online: 02 April (2018) ISSN 1017-1398 R&D Projects: GA ČR GA13-06684S Institutional support: RVO:67985807 Keywords : Unconstrained minimization * Block variable metric methods * Limited-memory methods * BFGS update * Global convergence * Numerical results Subject RIV: BA - General Mathematics OBOR OECD: Applied mathematics Impact factor: 1.241, year: 2016

  5. Design of Fatigue Resistant Heusler-strengthened PdTi-based Shape Memory Alloys for Biomedical Applications

    Science.gov (United States)

    Frankel, Dana J.

    The development of non-surgical transcatheter aortic valve implantation (TAVI) techniques, which utilize collapsible artificial heart valves with shape memory alloy (SMA)-based frames, pushes performance requirements for biomedical SMAs beyond those for well-established vascular stent applications. Fatigue life for these devices must extend into the ultra-high cycle fatigue (UHCF) regime (>600M cycles) with zero probability of failure predicted at applied strain levels. High rates of Ni-hypersensitivity raise biocompatibility concerns, driving the development of low-Ni and Ni-free SMAs. This work focuses on the development of biocompatible, precipitation-strengthened, fatigue-resistant PdTi-based SMAs for biomedical applications. Functional and structural fatigue are both manifestations of cyclic instability resulting in accumulation of slip and eventual structural damage. While functional fatigue is easily experimentally evaluated, structural fatigue is more difficult to measure without the proper equipment. Therefore, in this work a theoretical approach using a model well validated in steels is utilized to investigate structural fatigue behavior in NiTi in the UHCF regime, while low cycle functional fatigue is evaluated in order to monitor the core phenomena of the cyclic instability. Results from fatigue simulations modeling crack nucleation at non-metallic inclusions in commercial NiTi underscore the importance of increasing yield strength for UHCF performance. Controlled precipitation of nanoscale, low-misfit, L21 Heusler aluminides can provide effective strengthening. Phase relations, precipitation kinetics, transformation temperature, transformation strain, cyclic stability, and mechanical properties are characterized in both Ni-free (Pd,Fe)(Ti,Al) and low-Ni high-strength "hybrid" (Pd,Ni)(Ti,Zr,Al) systems. Atom probe tomography is employed to measure phase compositions and particle sizes used to calibrate LSW models for coarsening kinetics and Gibbs

  6. From silicon to organic nanoparticle memory devices.

    Science.gov (United States)

    Tsoukalas, D

    2009-10-28

    After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

  7. Memory Modulation

    NARCIS (Netherlands)

    Roozendaal, Benno; McGaugh, James L.

    2011-01-01

    Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive

  8. Memory Dysfunction

    Science.gov (United States)

    Matthews, Brandy R.

    2015-01-01

    Purpose of Review: This article highlights the dissociable human memory systems of episodic, semantic, and procedural memory in the context of neurologic illnesses known to adversely affect specific neuroanatomic structures relevant to each memory system. Recent Findings: Advances in functional neuroimaging and refinement of neuropsychological and bedside assessment tools continue to support a model of multiple memory systems that are distinct yet complementary and to support the potential for one system to be engaged as a compensatory strategy when a counterpart system fails. Summary: Episodic memory, the ability to recall personal episodes, is the subtype of memory most often perceived as dysfunctional by patients and informants. Medial temporal lobe structures, especially the hippocampal formation and associated cortical and subcortical structures, are most often associated with episodic memory loss. Episodic memory dysfunction may present acutely, as in concussion; transiently, as in transient global amnesia (TGA); subacutely, as in thiamine deficiency; or chronically, as in Alzheimer disease. Semantic memory refers to acquired knowledge about the world. Anterior and inferior temporal lobe structures are most often associated with semantic memory loss. The semantic variant of primary progressive aphasia (svPPA) is the paradigmatic disorder resulting in predominant semantic memory dysfunction. Working memory, associated with frontal lobe function, is the active maintenance of information in the mind that can be potentially manipulated to complete goal-directed tasks. Procedural memory, the ability to learn skills that become automatic, involves the basal ganglia, cerebellum, and supplementary motor cortex. Parkinson disease and related disorders result in procedural memory deficits. Most memory concerns warrant bedside cognitive or neuropsychological evaluation and neuroimaging to assess for specific neuropathologies and guide treatment. PMID:26039844

  9. Carbon nanomaterials for non-volatile memories

    Science.gov (United States)

    Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

    2018-03-01

    Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

  10. Validity of Memory Tasks across the WJ III COG, NEPSYII, and WRAML-2 in a Mixed Clinical Sample of Children: Applicability to Four Neurocognitive Theories

    Science.gov (United States)

    Psimas, J. Lynsey

    2012-01-01

    Current research regarding the neurocognitive construct of memory in children and adolescents within clinical populations is insufficient (Hughes & Graham, 2002). Controversial theories of memory have led to divergent hypotheses about the construct of memory. Based on current disparity regarding the theoretical paradigm of memory, it cannot be…

  11. Exercise training effects on memory and hippocampal viscoelasticity in multiple sclerosis: a novel application of magnetic resonance elastography

    Energy Technology Data Exchange (ETDEWEB)

    Sandroff, Brian M. [Kessler Foundation, Neuropsychology and Neuroscience Laboratory, East Hanover, NJ (United States); Johnson, Curtis L. [University of Delaware, Deparment of Biomedical Engineering, Newark, DE (United States); Motl, Robert W. [University of Illinois at Urbana-Champaign, Department of Kinesiology and Community Health, Urbana, IL (United States)

    2017-01-15

    Cognitive impairment is common and debilitating among persons with multiple sclerosis (MS) and might be managed with exercise training. However, the effects of exercise training on viscoelastic brain properties in this population are unknown. The present pilot study adopted a single-blind randomized controlled trial (RCT) design and is the first to examine the effect of an aerobic exercise training intervention on learning and memory and hippocampal viscoelasticity using magnetic resonance elastography (MRE) in persons with MS. Eight fully ambulatory females with MS were randomly assigned into exercise training intervention or waitlist control conditions. The intervention condition involved 12 weeks of supervised, progressive treadmill walking exercise training. All participants underwent measures of learning and memory (i.e., California Verbal Learning Test-II; CVLT-II) and further underwent MRE scans for measurement of shear stiffness (μ) and damping ratio (ξ) of the hippocampus before and after the 12-week period. Overall, there were small-to-moderate intervention effects on CVLT-II performance (d = 0.34) and large intervention effects on hippocampal μ (d = 0.94) and hippocampal ξ (d = -1.20). Change in CVLT-II scores was strongly associated with change in μ (r = 0.93, p < 0.01) and ξ (r = -.96, p < 0.01) of the hippocampus. This small pilot RCT provides exciting proof-of-concept data supporting progressive treadmill walking exercise training for potentially improving learning and memory and underlying hippocampal viscoelastic properties in persons with MS. This is important given the high prevalence and burden of MS-related memory impairment. (orig.)

  12. Exercise training effects on memory and hippocampal viscoelasticity in multiple sclerosis: a novel application of magnetic resonance elastography

    International Nuclear Information System (INIS)

    Sandroff, Brian M.; Johnson, Curtis L.; Motl, Robert W.

    2017-01-01

    Cognitive impairment is common and debilitating among persons with multiple sclerosis (MS) and might be managed with exercise training. However, the effects of exercise training on viscoelastic brain properties in this population are unknown. The present pilot study adopted a single-blind randomized controlled trial (RCT) design and is the first to examine the effect of an aerobic exercise training intervention on learning and memory and hippocampal viscoelasticity using magnetic resonance elastography (MRE) in persons with MS. Eight fully ambulatory females with MS were randomly assigned into exercise training intervention or waitlist control conditions. The intervention condition involved 12 weeks of supervised, progressive treadmill walking exercise training. All participants underwent measures of learning and memory (i.e., California Verbal Learning Test-II; CVLT-II) and further underwent MRE scans for measurement of shear stiffness (μ) and damping ratio (ξ) of the hippocampus before and after the 12-week period. Overall, there were small-to-moderate intervention effects on CVLT-II performance (d = 0.34) and large intervention effects on hippocampal μ (d = 0.94) and hippocampal ξ (d = -1.20). Change in CVLT-II scores was strongly associated with change in μ (r = 0.93, p < 0.01) and ξ (r = -.96, p < 0.01) of the hippocampus. This small pilot RCT provides exciting proof-of-concept data supporting progressive treadmill walking exercise training for potentially improving learning and memory and underlying hippocampal viscoelastic properties in persons with MS. This is important given the high prevalence and burden of MS-related memory impairment. (orig.)

  13. Defect states and charge trapping characteristics of HfO2 films for high performance nonvolatile memory applications

    International Nuclear Information System (INIS)

    Zhang, Y.; Shao, Y. Y.; Lu, X. B.; Zeng, M.; Zhang, Z.; Gao, X. S.; Zhang, X. J.; Liu, J.-M.; Dai, J. Y.

    2014-01-01

    In this work, we present significant charge trapping memory effects of the metal-hafnium oxide-SiO 2 -Si (MHOS) structure. The devices based on 800 °C annealed HfO 2 film exhibit a large memory window of ∼5.1 V under ±10 V sweeping voltages and excellent charge retention properties with only small charge loss of ∼2.6% after more than 10 4  s retention. The outstanding memory characteristics are attributed to the high density of deep defect states in HfO 2 films. We investigated the defect states in the HfO 2 films by photoluminescence and photoluminescence excitation measurements and found that the defect states distributed in deep energy levels ranging from 1.1 eV to 2.9 eV below the conduction band. Our work provides further insights for the charge trapping mechanisms of the HfO 2 based MHOS devices.

  14. Declarative memory.

    Science.gov (United States)

    Riedel, Wim J; Blokland, Arjan

    2015-01-01

    Declarative Memory consists of memory for events (episodic memory) and facts (semantic memory). Methods to test declarative memory are key in investigating effects of potential cognition-enhancing substances--medicinal drugs or nutrients. A number of cognitive performance tests assessing declarative episodic memory tapping verbal learning, logical memory, pattern recognition memory, and paired associates learning are described. These tests have been used as outcome variables in 34 studies in humans that have been described in the literature in the past 10 years. Also, the use of episodic tests in animal research is discussed also in relation to the drug effects in these tasks. The results show that nutritional supplementation of polyunsaturated fatty acids has been investigated most abundantly and, in a number of cases, but not all, show indications of positive effects on declarative memory, more so in elderly than in young subjects. Studies investigating effects of registered anti-Alzheimer drugs, cholinesterase inhibitors in mild cognitive impairment, show positive and negative effects on declarative memory. Studies mainly carried out in healthy volunteers investigating the effects of acute dopamine stimulation indicate enhanced memory consolidation as manifested specifically by better delayed recall, especially at time points long after learning and more so when drug is administered after learning and if word lists are longer. The animal studies reveal a different picture with respect to the effects of different drugs on memory performance. This suggests that at least for episodic memory tasks, the translational value is rather poor. For the human studies, detailed parameters of the compositions of word lists for declarative memory tests are discussed and it is concluded that tailored adaptations of tests to fit the hypothesis under study, rather than "off-the-shelf" use of existing tests, are recommended.

  15. Magnetic vortex racetrack memory

    Science.gov (United States)

    Geng, Liwei D.; Jin, Yongmei M.

    2017-02-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

  16. Working Memory and Neurofeedback.

    Science.gov (United States)

    YuLeung To, Eric; Abbott, Kathy; Foster, Dale S; Helmer, D'Arcy

    2016-01-01

    Impairments in working memory are typically associated with impairments in other cognitive faculties such as attentional processes and short-term memory. This paper briefly introduces neurofeedback as a treatment modality in general, and, more specifically, we review several of the current modalities successfully used in neurofeedback (NF) for the treatment of working memory deficits. Two case studies are presented to illustrate how neurofeedback is applied in treatment. The development of Low Resolution Electromagnetic Tomography (LORETA) and its application in neurofeedback now makes it possible to specifically target deep cortical/subcortical brain structures. Developments in neuroscience concerning neural networks, combined with highly specific yet practical NF technologies, makes neurofeedback of particular interest to neuropsychological practice, including the emergence of specific methodologies for treating very difficult working memory (WM) problems.

  17. Shape memory effect alloys

    International Nuclear Information System (INIS)

    Koshimizu, S.

    1992-01-01

    Although the pseudo- or super-elasticity phenomena and the shape memory effect were known since the 1940's, the enormous curiosity and the great interest to their practical applications emerged with the development of the NITINOL alloy (Nickel-Titanium Naval Ordance Laboratory) by the NASA during the 1960's. This fact marked the appearance of a new class of materials, popularly known as shape memory effect alloys (SMEA). The objective of this work is to present a state-of-the-art of the development and applications for the SMEA. (E.O.)

  18. Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

    International Nuclear Information System (INIS)

    Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

    2012-01-01

    Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

  19. Configurable memory system and method for providing atomic counting operations in a memory device

    Science.gov (United States)

    Bellofatto, Ralph E.; Gara, Alan G.; Giampapa, Mark E.; Ohmacht, Martin

    2010-09-14

    A memory system and method for providing atomic memory-based counter operations to operating systems and applications that make most efficient use of counter-backing memory and virtual and physical address space, while simplifying operating system memory management, and enabling the counter-backing memory to be used for purposes other than counter-backing storage when desired. The encoding and address decoding enabled by the invention provides all this functionality through a combination of software and hardware.

  20. Memory design

    DEFF Research Database (Denmark)

    Tanderup, Sisse

    by cultural forms, often specifically by the concept of memory in philosophy, sociology and psychology, while Danish design traditionally has been focusing on form and function with frequent references to the forms of nature. Alessi's motivation for investigating the concept of memory is that it adds......Mind and Matter - Nordik 2009 Conference for Art Historians Design Matters Contributed Memory design BACKGROUND My research concerns the use of memory categories in the designs by the companies Alessi and Georg Jensen. When Alessi's designers create their products, they are usually inspired...... a cultural dimension to the design objects, enabling the objects to make an identity-forming impact. Whether or not the concept of memory plays a significant role in Danish design has not yet been elucidated fully. TERMINOLOGY The concept of "memory design" refers to the idea that design carries...

  1. Disputed Memory

    DEFF Research Database (Denmark)

    , individual and political discourse and electronic social media. Analyzing memory disputes in various local, national and transnational contexts, the chapters demonstrate the political power and social impact of painful and disputed memories. The book brings new insights into current memory disputes...... in Central, Eastern and Southeastern Europe. It contributes to the understanding of processes of memory transmission and negotiation across borders and cultures in Europe, emphasizing the interconnectedness of memory with emotions, mediation and politics....... century in the region. Written by an international group of scholars from a diversity of disciplines, the chapters approach memory disputes in methodologically innovative ways, studying representations and negotiations of disputed pasts in different media, including monuments, museum exhibitions...

  2. Magnetic shape memory alloys: Basic properties and applications; Aleaciones magneticas con memoria de forma: propiedades basicas y aplicaciones

    Energy Technology Data Exchange (ETDEWEB)

    Barandiaran, J. M.; Lazpita, P.; Guiterrez, J.; Garcia Arribas, A.; Feuchtwanger, J.; Asua, E.; Etxebarria, V.; Chernenko, V. A.

    2010-07-01

    These materials can undergo large deformations when subjected to external stresses when they are in the phase low temperature due to the super elasticity property. Super elasticity properties and memory effect form derived from the martensitic transformation, which thermoelastic transformation is involved in effort as well as temperature. The transformation autoacomodante called for a single crystal phase austenite gives rise to several crystals spontaneously martensite with their axes oriented in different directions to accommodate the deformation of the network. These crystals called variant or twins and their movement and change orientation gives rise to the super elasticity. (Author) 3 refs.

  3. A new mechanical characterization method for thin film microactuators and its application to NiTiCi shape memory alloy

    International Nuclear Information System (INIS)

    Seward, K P

    1999-01-01

    In an effort to develop a more full characterization tool of shape memory alloys, a new technique is presented for the mechanical characterization of microactuators and applied to SMA thin films. A test instrument was designed to utilize a spring-loaded transducer in measuring displacements with resolution of 1.5 pm and forces with resolution of 0.2 mN. Employing an out-of-plane loading method for freestanding SMA thin films, strain resolution of 30(mu)(epsilon) and stress resolution of 2.5 MPa were achieved. This new testing method is presented against previous SMA characterization methods for purposes of comparison. Four mm long, 2(micro)m thick NiTiCu ligaments suspended across open windows were bulk micromachined for use in the out-of-plane stress and strain measurements. The fabrication process used to micromachine the ligaments is presented step-by-step, alongside methods of fabrication that failed to produce testable ligaments. Static analysis showed that 63% of the applied strain was recovered while ligaments were subjected to tensile stresses of 870 MPa. In terms of recoverable stress and recoverable strain, the ligaments achieved maximum recovery of 700 MPa and 3.0% strain. No permanent deformations were seen in any ligament during deflection measurements. Maximum actuation forces and displacements produced by the 4 mm ligaments situated on 1 cm square test chips were 56 mN and 300(micro)m, respectively. Fatigue analysis of the ligaments showed degradation in recoverable strain from 0.33% to 0.24% with 200,000 cycles, corresponding to deflections of 90(micro)m and forces of 25 mN. Cycling also produced a wavering shape memory effect late in ligament life, leading to broad inconsistencies of as much as 35% deviation from average. Unexpected phenomena like stress-induced martensitic twinning that leads to less recoverable stress and the shape memory behavior of long life devices are addressed. Finally, a model for design of microactuators using shape memory

  4. Application of fractional derivative with exponential law to bi-fractional-order wave equation with frictional memory kernel

    Science.gov (United States)

    Cuahutenango-Barro, B.; Taneco-Hernández, M. A.; Gómez-Aguilar, J. F.

    2017-12-01

    Analytical solutions of the wave equation with bi-fractional-order and frictional memory kernel of Mittag-Leffler type are obtained via Caputo-Fabrizio fractional derivative in the Liouville-Caputo sense. Through the method of separation of variables and Laplace transform method we derive closed-form solutions and establish fundamental solutions. Special cases with homogeneous Dirichlet boundary conditions and nonhomogeneous initial conditions, as well as for the external force are considered. Numerical simulations of the special solutions were done and novel behaviors are obtained.

  5. InAs nanocrystals on SiO2/Si by molecular beam epitaxy for memory applications

    International Nuclear Information System (INIS)

    Hocevar, Moiera; Regreny, Philippe; Descamps, Armel; Albertini, David; Saint-Girons, Guillaume; Souifi, Abdelkader; Gendry, Michel; Patriarche, Gilles

    2007-01-01

    We studied a memory structure based on InAs nanocrystals grown by molecular beam epitaxy directly on thermal SiO 2 on silicon. Both nanocrystal diameter and density can be controlled by growth parameters. Transmission electron microscopy analysis shows high crystallinity and low size dispersion. In an electrical test structure with a 3.5 nm tunnel oxide, we observed that 80% of the initial injected electrons remain stored in the InAs nanocrystals after 3 months and that the retention time for electrons in InAs nanocrystals is four orders of magnitude higher than in silicon nanocrystals

  6. Main Memory

    OpenAIRE

    Boncz, Peter; Liu, Lei; Özsu, M.

    2008-01-01

    htmlabstractPrimary storage, presently known as main memory, is the largest memory directly accessible to the CPU in the prevalent Von Neumann model and stores both data and instructions (program code). The CPU continuously reads instructions stored there and executes them. It is also called Random Access Memory (RAM), to indicate that load/store instructions can access data at any location at the same cost, is usually implemented using DRAM chips, which are connected to the CPU and other per...

  7. Functional memory metals

    International Nuclear Information System (INIS)

    Dunne, D.P.

    2000-01-01

    The field of shape memory phenomena in metals and alloys has developed in a sporadic fashion from a scientific curiosity to a vigorously growing niche industry, over a period close to a full working lifetime. Memory metal research and development is replete with scientist and engineer 'true believers', who can finally feel content that their longstanding confidence in the potential of these unusual functional materials has not been misplaced. This paper reviews the current range of medical and non-medical systems and devices which are based on memory metals and attempts to predict trends in applications over the next decade. The market is dominated by Ni Ti alloys which have proved to exhibit the best and most reproducible properties for application in a wide range of medical and non-medical devices

  8. Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43 film

    Directory of Open Access Journals (Sweden)

    J. H. Park

    2016-02-01

    Full Text Available The lower cyclic endurance of Phase Change Memory (PCM devices limits the spread of its applications for reliable memory. The findings reported here show that micro-voids and excess vacancies that are produced during the deposition process and the subsequent growth in sputtered carbon-doped GeSbTe films is one of the major causes of device failure in PCM with cycling. We found that the size of voids in C15(Ge21Sb36Te43 films increased with increasing annealing temperature and the activation energy for the growth rate of voids was determined to be 2.22 eV. The film density, which is closely related to voids, varies with the deposition temperature and sputtering power used. The lower heat of vaporization of elemental Sb and Te compared to that for elemental Ge and C is a major cause of the low density of the film. It was possible to suppress void formation to a considerable extent by optimizing the deposition conditions, which leads to a dramatic enhancement in cyclic endurance by 2 orders of magnitude in PCM devices prepared at 300oC-300W compared to one prepared at 240oC-500W without change of compositions.

  9. The methodological proposal of photography as a discharger of the trigger of memory: application to Telêmaco Borba s history (1950-1969

    Directory of Open Access Journals (Sweden)

    Juliana de Oliveira Teixeira

    2014-07-01

    Full Text Available This work has the objectives of testing and systematizing the methodological proposal of photography as a discharger of the trigger of memory, a technique that combines photographic images with oral history. The method, developed by the group Communication and History of Universidade Estadual de Londrina, was formalized in the dissertation of Maria Luisa Hoffmann (2010 and, since then, it has been applied to cities with recent histories. To do a relevant test in this dissertation, Telêmaco Borba(PR was chosen as field of study, and the precepts of empiricism in communication were respected, following the ideas of Maria Immacolata Vassallo Lopes (2010 and Luiz Claudio Martino (2010. The application of the method was also based theoretically, using as references the works of Jacques Le Goff (2003, Ecléa Bosi (2009 and Boris Kossoy (2009. During the empirical process, nine pioneers of Telêmaco Borba were submitted to the methodological proposal, using 17 old photographs of the city. Roughly, the results of the test show that the technique, when applied with the epistemological criteria of science, becomes an efficient empirical tool, capable of bringing new data and information to the studies of memory and to the history of the studied cities.

  10. NiTi shape-memory alloy oxidized in low-temperature plasma with carbon coating: Characteristic and a potential for cardiovascular applications

    Science.gov (United States)

    Witkowska, Justyna; Sowińska, Agnieszka; Czarnowska, Elżbieta; Płociński, Tomasz; Borowski, Tomasz; Wierzchoń, Tadeusz

    2017-11-01

    Surface layers currently produced on NiTi alloys do not meet all the requirements for materials intended for use in cardiology. Plasma surface treatments of titanium and its alloys under glow discharge conditions make it possible to produce surface layers, such as TiN or TiO2, which increases corrosion resistance and biocompatibility. The production of layers on NiTi alloys with the same properties, and maintaining their shape memory and superelasticity features, requires the use of low-temperature processes. At the same time, since it is known that the carbon-based layers could prevent excessive adhesion and aggregation of platelets, we examined the composite a-CNH + TiO2 type surface layer produced by means of a hybrid method combining oxidation in low-temperature plasma and Radio Frequency Chemical Vapor Deposition (RFCVD) processes. Investigations have shown that this composite layer increases the corrosion resistance of the material, and both the low degree of roughness and the chemical composition of the surface produced lead to decreased platelet adhesion and aggregation and proper endothelialization, which could extend the range of applications of NiTi shape memory alloys.

  11. Effect of Cross-linking Density on Creep and Recovery Behavior in Epoxy-Based Shape Memory Polymers (SMEPs) for Structural Applications

    Science.gov (United States)

    Rao, Kavitha V.; Ananthapadmanabha, G. S.; Dayananda, G. N.

    2016-12-01

    Epoxy-based shape memory polymers (SMEPs) are gaining importance in the area of aerospace structures due to their high strength and stiffness which is a primary requirement for an SMEP in structural applications. The understanding of viscoelastic behavior of SMEPs is very essential to assess their shape memory effect. In the present work, three types of SMEPs with varying cross-linking densities were developed by curing an aromatic epoxy resin with aliphatic amines. Glass transition temperature ( T g) was measured for these SMEPs using advanced rheometric expansion system, and from the T g measurements, a range of temperatures from glassy to rubbery regimes were chosen. At selected temperatures, creep-recovery tests were performed in order to evaluate the viscoelastic behavior of SMEPs and also to investigate the effect of temperature on creep-recovery. Further, a three-parameter viscoelastic model (Zener) was used to fit the data obtained from experiments. Model parameters like moduli of the springs and viscosity of the dashpot were evaluated by curve fitting. Results revealed that Zener model was well suited to describe the viscoelastic behavior of SMEPs as a function of test temperatures.

  12. Organic Nonvolatile Memory Devices Based on Ferroelectricity

    NARCIS (Netherlands)

    Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  13. Organic nonvolatile memory devices based on ferroelectricity

    NARCIS (Netherlands)

    Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

    2010-01-01

    A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

  14. Testing of modern semiconductor memory structures

    NARCIS (Netherlands)

    Gaydadjiev, G.N.

    2007-01-01

    In this thesis, we study the problem of faults in modern semiconductor memory structures and their tests. According to the 2005 ITRS, the systems on chip (SoCs) are moving from logic and memory balanced chips to more memory dominated devices in order to cope with the increasing application

  15. Effect of a thymol application on olfactory memory and gene expression levels in the brain of the honeybee Apis mellifera.

    Science.gov (United States)

    Bonnafé, Elsa; Drouard, Florian; Hotier, Lucie; Carayon, Jean-Luc; Marty, Pierre; Treilhou, Michel; Armengaud, Catherine

    2015-06-01

    Essential oils are used by beekeepers to control the Varroa mites that infest honeybee colonies. So, bees can be exposed to thymol formulations in the hive. The effects of the monoterpenoid thymol were explored on olfactory memory and gene expression in the brain of the honeybee. In bees previously exposed to thymol (10 or 100 ng/bee), the specificity of the response to the conditioned stimulus (CS) was lost 24 h after learning. Besides, the octopamine receptor OA1 gene Amoa1 showed a significant decrease of expression 3 h after exposure with 10 or 100 ng/bee of thymol. With the same doses, expression of Rdl gene, coding for a GABA receptor subunit, was not significantly modified but the trpl gene was upregulated 1 and 24 h after exposure to thymol. These data indicated that the genes coding for the cellular targets of thymol could be rapidly regulated after exposure to this molecule. Memory and sensory processes should be investigated in bees after chronic exposure in the hive to thymol-based preparations.

  16. Multivariate long memory processes: applications to the EDF producer problematic in the context of the european electricity market liberalization

    International Nuclear Information System (INIS)

    Diongue, A.K.

    2005-10-01

    Certain crucial financial time series, such as the interconnected european electricity market spot prices, exhibit long memory, in the sense of slowly decaying correlations combined with heteroskedasticity and periodic or none cycles. In modeling such behavior, we consider on one hand, the k factor GIGARCH process and additionally propose two methods to address the related parameter estimation problem. In each method, we explore the asymptotic theory for estimation. Moreover, the asymptotic properties are validated and compared via Monte Carlo simulations. On the other hand, we introduce a new multivariate long memory generalized model (k-factor MVGARMA) in order to model interconnected european electricity market spot prices. We suggest a practical framework to address the parameter estimation problem. We investigate the analytical expressions of the least squares predictors for the two proposed models and their confidence intervals. To finish, we apply the two proposed models to the french and german electricity market spot prices and a comparison is made between their forecasting abilities. (author)

  17. A memory-efficient data structure representing exact-match overlap graphs with application for next-generation DNA assembly.

    Science.gov (United States)

    Dinh, Hieu; Rajasekaran, Sanguthevar

    2011-07-15

    Exact-match overlap graphs have been broadly used in the context of DNA assembly and the shortest super string problem where the number of strings n ranges from thousands to billions. The length ℓ of the strings is from 25 to 1000, depending on the DNA sequencing technologies. However, many DNA assemblers using overlap graphs suffer from the need for too much time and space in constructing the graphs. It is nearly impossible for these DNA assemblers to handle the huge amount of data produced by the next-generation sequencing technologies where the number n of strings could be several billions. If the overlap graph is explicitly stored, it would require Ω(n(2)) memory, which could be prohibitive in practice when n is greater than a hundred million. In this article, we propose a novel data structure using which the overlap graph can be compactly stored. This data structure requires only linear time to construct and and linear memory to store. For a given set of input strings (also called reads), we can informally define an exact-match overlap graph as follows. Each read is represented as a node in the graph and there is an edge between two nodes if the corresponding reads overlap sufficiently. A formal description follows. The maximal exact-match overlap of two strings x and y, denoted by ov(max)(x, y), is the longest string which is a suffix of x and a prefix of y. The exact-match overlap graph of n given strings of length ℓ is an edge-weighted graph in which each vertex is associated with a string and there is an edge (x, y) of weight ω=ℓ-|ov(max)(x, y)| if and only if ω ≤ λ, where |ov(max)(x, y)| is the length of ov(max)(x, y) and λ is a given threshold. In this article, we show that the exact-match overlap graphs can be represented by a compact data structure that can be stored using at most (2λ-1)(2⌈logn⌉+⌈logλ⌉)n bits with a guarantee that the basic operation of accessing an edge takes O(log λ) time. We also propose two algorithms for

  18. Novel memory architecture for video signal processor

    Science.gov (United States)

    Hung, Jen-Sheng; Lin, Chia-Hsing; Jen, Chein-Wei

    1993-11-01

    An on-chip memory architecture for video signal processor (VSP) is proposed. This memory structure is a two-level design for the different data locality in video applications. The upper level--Memory A provides enough storage capacity to reduce the impact on the limitation of chip I/O bandwidth, and the lower level--Memory B provides enough data parallelism and flexibility to meet the requirements of multiple reconfigurable pipeline function units in a single VSP chip. The needed memory size is decided by the memory usage analysis for video algorithms and the number of function units. Both levels of memory adopted a dual-port memory scheme to sustain the simultaneous read and write operations. Especially, Memory B uses multiple one-read-one-write memory banks to emulate the real multiport memory. Therefore, one can change the configuration of Memory B to several sets of memories with variable read/write ports by adjusting the bus switches. Then the numbers of read ports and write ports in proposed memory can meet requirement of data flow patterns in different video coding algorithms. We have finished the design of a prototype memory design using 1.2- micrometers SPDM SRAM technology and will fabricated it through TSMC, in Taiwan.

  19. Magnetic vortex racetrack memory

    Energy Technology Data Exchange (ETDEWEB)

    Geng, Liwei D.; Jin, Yongmei M., E-mail: ymjin@mtu.edu

    2017-02-01

    We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. - Highlights: • Advance fundamental knowledge of current-driven magnetic vortex phenomena. • Report appealing new magnetic racetrack memory based on current-controlled magnetic vortices in nanowires. • Provide a novel approach to adjust current magnitude for data propagation. • Overcome the limitations of domain wall racetrack memory.

  20. Laser Nanosoldering of Golden and Magnetite Particles and its Possible Application in 3D Printing Devices and Four-Valued Non-Volatile Memories

    Directory of Open Access Journals (Sweden)

    Jaworski Jacek

    2015-12-01

    Full Text Available In recent years the 3D printing methods have been developing rapidly. This article presents researches about a new composite consisted of golden and magnetite nanoparticles which could be used for this technique. Preparation of golden nanoparticles by laser ablation and their soldering by laser green light irradiation proceeded in water environment. Magnetite was obtained on chemical way. During experiments it was tested a change of a size of nanoparticles during laser irradiation, surface plasmon resonance, zeta potential. The obtained golden - magnetite composite material was magnetic after laser irradiation. On the end there was considered the application it for 3D printing devices, water filters and four-valued non-volatile memories.

  1. Collaging Memories

    Science.gov (United States)

    Wallach, Michele

    2011-01-01

    Even middle school students can have memories of their childhoods, of an earlier time. The art of Romare Bearden and the writings of Paul Auster can be used to introduce ideas about time and memory to students and inspire works of their own. Bearden is an exceptional role model for young artists, not only because of his astounding art, but also…

  2. Memory Magic.

    Science.gov (United States)

    Hartman, Thomas G.; Nowak, Norman

    This paper outlines several "tricks" that aid students in improving their memories. The distinctions between operational and figural thought processes are noted. Operational memory is described as something that allows adults to make generalizations about numbers and the rules by which they may be combined, thus leading to easier memorization.…

  3. Memory loss

    Science.gov (United States)

    ... barbiturates or ( hypnotics ) ECT (electroconvulsive therapy) (most often short-term memory loss) Epilepsy that is not well controlled Illness that ... appointment. Medical history questions may include: Type of memory loss, such as short-term or long-term Time pattern, such as how ...

  4. Episodic Memories

    Science.gov (United States)

    Conway, Martin A.

    2009-01-01

    An account of episodic memories is developed that focuses on the types of knowledge they represent, their properties, and the functions they might serve. It is proposed that episodic memories consist of "episodic elements," summary records of experience often in the form of visual images, associated to a "conceptual frame" that provides a…

  5. Flavor Memory

    NARCIS (Netherlands)

    Mojet, Jos; Köster, Ep

    2016-01-01

    Odor, taste, texture, temperature, and pain all contribute to the perception and memory of food flavor. Flavor memory is also strongly linked to the situational aspects of previous encounters with the flavor, but does not depend on the precise recollection of its sensory features as in vision and

  6. Main Memory

    NARCIS (Netherlands)

    P.A. Boncz (Peter); L. Liu (Lei); M. Tamer Özsu

    2008-01-01

    htmlabstractPrimary storage, presently known as main memory, is the largest memory directly accessible to the CPU in the prevalent Von Neumann model and stores both data and instructions (program code). The CPU continuously reads instructions stored there and executes them. It is also called Random

  7. Radiation Damage in Electronic Memory Devices

    OpenAIRE

    Fetahović, Irfan; Pejović, Milić; Vujisić, Miloš

    2013-01-01

    This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simula...

  8. Fast Initialization of Bubble-Memory Systems

    Science.gov (United States)

    Looney, K. T.; Nichols, C. D.; Hayes, P. J.

    1986-01-01

    Improved scheme several orders of magnitude faster than normal initialization scheme. State-of-the-art commercial bubble-memory device used. Hardware interface designed connects controlling microprocessor to bubblememory circuitry. System software written to exercise various functions of bubble-memory system in comparison made between normal and fast techniques. Future implementations of approach utilize E2PROM (electrically-erasable programable read-only memory) to provide greater system flexibility. Fastinitialization technique applicable to all bubble-memory devices.

  9. CMOS technology: a critical enabler for free-form electronics-based killer applications

    KAUST Repository

    Hussain, Muhammad Mustafa; Hussain, Aftab M.; Hanna, Amir

    2016-01-01

    Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today

  10. Accessing memory

    Science.gov (United States)

    Yoon, Doe Hyun; Muralimanohar, Naveen; Chang, Jichuan; Ranganthan, Parthasarathy

    2017-09-26

    A disclosed example method involves performing simultaneous data accesses on at least first and second independently selectable logical sub-ranks to access first data via a wide internal data bus in a memory device. The memory device includes a translation buffer chip, memory chips in independently selectable logical sub-ranks, a narrow external data bus to connect the translation buffer chip to a memory controller, and the wide internal data bus between the translation buffer chip and the memory chips. A data access is performed on only the first independently selectable logical sub-rank to access second data via the wide internal data bus. The example method also involves locating a first portion of the first data, a second portion of the first data, and the second data on the narrow external data bus during separate data transfers.

  11. Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

    International Nuclear Information System (INIS)

    Yeo, Yee Ngee; Wang Yingqian; Samanta, Santanu Kumar; Yoo, Won Jong; Samudra, Ganesh; Gao, Dongyue; Chong, Chee Ching

    2006-01-01

    We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated

  12. Characterization of Ge Doping on Sb_2Te_3 for High-Speed Phase Change Memory Application

    International Nuclear Information System (INIS)

    Zhu Yue-Qin; Xie Hua-Qing; Zhang Zhong-Hua; Song San-Nian; Song Zhi-Tang; Shen Lan-Lan; Li Le; Wu Liang-Cai; Liu Bo

    2015-01-01

    The phase change material of Ge-doped Sb_2Te_3 is shown to have higher crystallization temperature and better thermal stability compared with pure Sb_2Te_3. Ge_0_._1_1Sb_2Te_3 alloys are considered to be a potential candidate for phase change random access memories, as proved by a higher crystallization temperature, a better data retention ability, and a faster switching speed in comparison with those of Ge_2Sb_2Te_5. In addition, Ge_0_._1_1Sb_2Te_3 presents extremely rapid reverse switching speed (10 ns), and up to 10"5 programming cycles are obtained with stable set and reset resistances. (paper)

  13. Resistance controllability and variability improvement in a TaO{sub x}-based resistive memory for multilevel storage application

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, A., E-mail: amitknp@postech.ac.kr, E-mail: amit.knp02@gmail.com, E-mail: hwanghs@postech.ac.kr; Song, J.; Hwang, H., E-mail: amitknp@postech.ac.kr, E-mail: amit.knp02@gmail.com, E-mail: hwanghs@postech.ac.kr [Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 790-784 (Korea, Republic of); Deleruyelle, D.; Bocquet, M. [Im2np, UMR CNRS 7334, Aix-Marseille Université, Marseille (France)

    2015-06-08

    In order to obtain reliable multilevel cell (MLC) characteristics, resistance controllability between the different resistance levels is required especially in resistive random access memory (RRAM), which is prone to resistance variability mainly due to its intrinsic random nature of defect generation and filament formation. In this study, we have thoroughly investigated the multilevel resistance variability in a TaO{sub x}-based nanoscale (<30 nm) RRAM operated in MLC mode. It is found that the resistance variability not only depends on the conductive filament size but also is a strong function of oxygen vacancy concentration in it. Based on the gained insights through experimental observations and simulation, it is suggested that forming thinner but denser conductive filament may greatly improve the temporal resistance variability even at low operation current despite the inherent stochastic nature of resistance switching process.

  14. System diagnosis using finite memory observers: Common Rail application; Diagnostic des systemes a l'aide d'observateurs a memoire finie: application au Common Rail

    Energy Technology Data Exchange (ETDEWEB)

    Graton, G.

    2005-12-15

    The aim of this work was to propose a fault detection method on the high pressure direct injection system (called Common Rail system) set up on Diesel vehicles. The importance of the fault detection procedure implementation was highlighted thanks to the description of the stakes (lowers consumption, reduction in the pollutant emissions and sound, increase of performances) and constraints dependent on Common Rail (high pressure, high frequency, gas oil lubrication, high precision machining, standards EURO respect,...) but also through a listing of failures which can occur on Common Rail. A synthesis on the different diagnosis methods of systems contributed to select a fault detection method with expected performances (detection of fault beginning, detection speed, isolation and characterization of detected fault and minimizing false alarm and bad detections). After a detailed study (properties, sequential formulations and sensitivity study) of the selected detection method (finite memory observers) and a modeling of the Common Rail various bodies behavior, the algorithm of detection was tested on three different models of the system Common Rail. Moreover, the comparison between the finite memory observer and a Luenberger observer and a Kalman filter allow to appreciate the residual robustness degree. Obtained results allow to conclude on good detection of actuator and sensor faults. (author)

  15. C-RAM: breaking mobile device memory barriers using the cloud

    OpenAIRE

    Pamboris, A; Pietzuch, P

    2015-01-01

    ?Mobile applications are constrained by the available memory of mobile devices. We present C-RAM, a system that uses cloud-based memory to extend the memory of mobile devices. It splits application state and its associated computation between a mobile device and a cloud node to allow applications to consume more memory, while minimising the performance impact. C-RAM thus enables developers to realise new applications or port legacy desktop applications with a large memory footprint to mobile ...

  16. Memory Reconsolidation.

    Science.gov (United States)

    Haubrich, Josue; Nader, Karim

    2018-01-01

    Scientific advances in the last decades uncovered that memory is not a stable, fixed entity. Apparently stable memories may become transiently labile and susceptible to modifications when retrieved due to the process of reconsolidation. Here, we review the initial evidence and the logic on which reconsolidation theory is based, the wide range of conditions in which it has been reported and recent findings further revealing the fascinating nature of this process. Special focus is given to conceptual issues of when and why reconsolidation happen and its possible outcomes. Last, we discuss the potential clinical implications of memory modifications by reconsolidation.

  17. Olfactory Memory

    Science.gov (United States)

    Eichenbaum, Howard; Robitsek, R. Jonathan

    2009-01-01

    Odor-recognition memory in rodents may provide a valuable model of cognitive aging. In a recent study we used signal detection analyses to distinguish odor recognition based on recollection versus that based on familiarity. Aged rats were selectively impaired in recollection, with relative sparing of familiarity, and the deficits in recollection were correlated with spatial memory impairments. These results complement electro-physiological findings indicating age-associated deficits in the ability of hippocampal neurons to differentiate contextual information, and this information-processing impairment may underlie the common age-associated decline in olfactory and spatial memory. PMID:19686208

  18. Memory transition between communicating agents

    Directory of Open Access Journals (Sweden)

    Elena FELL

    2012-01-01

    Full Text Available What happens to a memory when it has been externalised and embodied but has not reached its addressee yet? A letter that has been written but has not been read, a monument before it is unveiled or a Neolithic tool buried in the ground – all these objects harbour human memories engrained in their physicality; messages intended for those who will read the letter, admire the monument and hold the tool. According to Ilyenkov’s theory of objective idealism, the conscious and wilful input encoded in all manmade objects as the ‘ideal’ has an objective existence, independent from the author, but this existence lasts only while memories are shared between communicating parties. If all human minds were absent from the world for a period of time, the ‘ideal’, or memories, would cease to exist. They would spring back to existence, however, once humans re-entered the world. Ilyenkov’s analysis of memories existing outside an individual human consciousness is informative and thorough but, following his line of thought, we would have to accept an ontological gap in the process of memory acquisition, storage and transmission. If there is a period, following memory acquisition and preceding its transmission, when memories plainly do not exist, then each time a new reader, spectator or user perceives them, he or she must create the author’s memories ex nihilo. Bergson’s theory of duration and intuition can help us to resolve this paradox.This paper will explore the ontological characteristics of memory passage in communication taken at different stages of the process. There will be an indication of how the findings of this investigation could be applicable to concrete cases of memory transmission. In particular, this concerns intergenerational communication, technological memory, the use of digital devices and the Internet.

  19. Some methods of encoding simple visual images for use with a sparse distributed memory, with applications to character recognition

    Science.gov (United States)

    Jaeckel, Louis A.

    1989-01-01

    To study the problems of encoding visual images for use with a Sparse Distributed Memory (SDM), I consider a specific class of images- those that consist of several pieces, each of which is a line segment or an arc of a circle. This class includes line drawings of characters such as letters of the alphabet. I give a method of representing a segment of an arc by five numbers in a continuous way; that is, similar arcs have similar representations. I also give methods for encoding these numbers as bit strings in an approximately continuous way. The set of possible segments and arcs may be viewed as a five-dimensional manifold M, whose structure is like a Mobious strip. An image, considered to be an unordered set of segments and arcs, is therefore represented by a set of points in M - one for each piece. I then discuss the problem of constructing a preprocessor to find the segments and arcs in these images, although a preprocessor has not been developed. I also describe a possible extension of the representation.

  20. Demo-application of shape memory alloy devices: the rehabilitation of the S. Giorgio Church bell tower

    Science.gov (United States)

    Indirli, Maurizio; Castellano, Maria G.; Clemente, Paolo; Martelli, Alessandro

    2001-07-01

    This paper describes the rehabilitation of the S. Giorgio Church Bell-Tower (Trignano, Municipality of S. Martino in Rio, Reggio Emilia, Italy), completed in September 1999. This masonry building, seriously damaged by the earthquake of October 15th 1996 which struck the Reggio Emilia and Modena Districts, Italy), was investigated by the authors immediately after the seismic event, as other ancient Cultural Heritage Structures (CUHESs) in the same area. In the past, seismic events have visited substantial destruction that translates into a significant loss of architectural heritage. The most common solution traditionally used to enhance the CUHESs seismic behaviour is the introduction of localized reinforcements, usually Traditional Steel Ties (TSTs), increasing stability and ductility. Anyway, in many cases said reinforcement techniques, often too invasive, proved to be inadequate to prevent collapse. For these reasons, the Bell-Tower intervention applies Innovative Antiseismic Techniques (IATs) by the use of superelastic Shape Memory Alloy (SMA) Devices (SMADs), a technology developed after a large amount of theoretical studies, numerical analyses and test campaigns. The SMADs, which can be considered a powerful tool with respect to the traditional methods, provide acceleration reduction, force limitation and energy dissipation. Furthermore, they are characterized by low invasivity and complete reversibility. When another earthquake occurred on June 18th 2000, with the same epicenter and a comparable Richter Magnitudo, the Bell-Tower, subjected to a new investigation, showed no damage of any type. Thus, the new seismic event has been the best verification of the retrofit intervention.

  1. Characterization of Cr-doped Sb{sub 2}Te{sub 3} films and their application to phase-change memory

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Qing; Xia, Yangyang; Zheng, Yonghui [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); University of the Chinese Academy of Sciences, Beijing, 100049 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Liu, Bo; Zhu, Min; Song, Sannian; Lv, Shilong; Cheng, Yan; Song, Zhitang; Feng, Songlin [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Huo, Ruru [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghai Key Laboratory of Nanofabrication Technology for Memory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050 (China); Shanghaitech University, Shanghai, 200031 (China)

    2015-08-15

    Phase-change memory (PCM) is regarded as one of the most promising candidates for the next-generation nonvolatile memory. Its storage medium, phase-change material, has attracted continuous exploration. Along the traditional GeTe-Sb{sub 2}Te{sub 3} tie line, the binary compound Sb{sub 2}Te{sub 3} is a high-speed phase-change material matrix. However, the low crystallization temperature prevents its practical application in PCM. Here, Cr is doped into Sb{sub 2}Te{sub 3}, called Cr-Sb{sub 2}Te{sub 3} (CST), to improve the thermal stability. We find that, with increase of the Cr concentration, grains are obviously refined. However, all the CST films exhibit a single hexagonal phase as Sb{sub 2}Te{sub 3} without phase separation. Also, the Cr helps to inhibit oxidation of Sb atoms. For the selected film CST{sub 1}0.5, the resistance ratio between amorphous and crystalline states is more than two orders of magnitude; the temperature for 10-year data retention is 120.8 C, which indicates better thermal stability than GST and pure Sb{sub 2}Te{sub 3}. PCM cells based on CST{sub 1}0.5 present small threshold current/voltage (4 μA/0.67 V). In addition, the cell can be operated by a low SET/RESET voltage pulse (1.1 V/2.4 V) with 50 ns width. Thus, Cr-Sb{sub 2}Te{sub 3} with suitable composition is a promising novel phase-change material used for PCM with high speed and good thermal stability performances. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Color Memory

    OpenAIRE

    Pate, Monica; Raclariu, Ana-Maria; Strominger, Andrew

    2017-01-01

    A transient color flux across null infinity in classical Yang-Mills theory is considered. It is shown that a pair of test `quarks' initially in a color singlet generically acquire net color as a result of the flux. A nonlinear formula is derived for the relative color rotation of the quarks. For weak color flux the formula linearizes to the Fourier transform of the soft gluon theorem. This color memory effect is the Yang-Mills analog of the gravitational memory effect.

  3. A SEMantic and EPisodic Memory Test (SEMEP) Developed within the Embodied Cognition Framework: Application to Normal Aging, Alzheimer's Disease and Semantic Dementia.

    Science.gov (United States)

    Vallet, Guillaume T; Hudon, Carol; Bier, Nathalie; Macoir, Joël; Versace, Rémy; Simard, Martine

    2017-01-01

    Embodiment has highlighted the importance of sensory-motor components in cognition. Perception and memory are thus very tightly bound together, and episodic and semantic memories should rely on the same grounded memory traces. Reduced perception should then directly reduce the ability to encode and retrieve an episodic memory, as in normal aging. Multimodal integration deficits, as in Alzheimer's disease, should lead to more severe episodic memory impairment. The present study introduces a new memory test developed to take into account these assumptions. The SEMEP (SEMantic-Episodic) memory test proposes to assess conjointly semantic and episodic knowledge across multiple tasks: semantic matching, naming, free recall, and recognition. The performance of young adults is compared to healthy elderly adults (HE), patients with Alzheimer's disease (AD), and patients with semantic dementia (SD). The results show specific patterns of performance between the groups. HE commit memory errors only for presented but not to be remembered items. AD patients present the worst episodic memory performance associated with intrusion errors (recall or recognition of items never presented). They were the only group to not benefit from a visual isolation (addition of a yellow background), a method known to increase the distinctiveness of the memory traces. Finally, SD patients suffer from the most severe semantic impairment. To conclude, confusion errors are common across all the elderly groups, whereas AD was the only group to exhibit regular intrusion errors and SD patients to show severe semantic impairment.

  4. A SEMantic and EPisodic Memory Test (SEMEP Developed within the Embodied Cognition Framework: Application to Normal Aging, Alzheimer's Disease and Semantic Dementia

    Directory of Open Access Journals (Sweden)

    Guillaume T. Vallet

    2017-09-01

    Full Text Available Embodiment has highlighted the importance of sensory-motor components in cognition. Perception and memory are thus very tightly bound together, and episodic and semantic memories should rely on the same grounded memory traces. Reduced perception should then directly reduce the ability to encode and retrieve an episodic memory, as in normal aging. Multimodal integration deficits, as in Alzheimer's disease, should lead to more severe episodic memory impairment. The present study introduces a new memory test developed to take into account these assumptions. The SEMEP (SEMantic-Episodic memory test proposes to assess conjointly semantic and episodic knowledge across multiple tasks: semantic matching, naming, free recall, and recognition. The performance of young adults is compared to healthy elderly adults (HE, patients with Alzheimer's disease (AD, and patients with semantic dementia (SD. The results show specific patterns of performance between the groups. HE commit memory errors only for presented but not to be remembered items. AD patients present the worst episodic memory performance associated with intrusion errors (recall or recognition of items never presented. They were the only group to not benefit from a visual isolation (addition of a yellow background, a method known to increase the distinctiveness of the memory traces. Finally, SD patients suffer from the most severe semantic impairment. To conclude, confusion errors are common across all the elderly groups, whereas AD was the only group to exhibit regular intrusion errors and SD patients to show severe semantic impairment.

  5. Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

    International Nuclear Information System (INIS)

    Lim, Dong-Gun; Kwak, Dong-Joo; Yi Junsin

    2002-01-01

    In this paper, we report upon an investigation into the feasibility of Y 2 O 3 films as buffer layers for metal ferroelectric insulator semiconductor type capacitors. Buffer layers were prepared by a two-step process of low temperature film growth using the RF reactive magnetron sputtering method and subsequent rapid thermal annealing. By applying an yttrium metal seed layer of 4 nm, unwanted SiO 2 layer generation was successfully suppressed at the interface between the buffer layer and the Si substrate. Increasing the post-annealing temperature above 700 deg. C reduced the surface roughness of the Y 2 O 3 films, and increasing the O 2 partial pressure from 10 to 20% increased the surface roughness from 4.0 to 15.1 nm. The Y 2 O 3 films, prepared using an O 2 partial pressure of 20% and annealed at 900 deg. C, exhibited the best surface roughness characteristics of the samples studied. For a substrate temperature above 400 deg. C and an O 2 partial pressure of 20%, we observed that a cubic Y 2 O 3 phase dominated the X-ray diffraction spectra. The lowest lattice mismatch achieved between the Y 2 O 3 film and the Si substrate was 1.75%. By using a two-step process, we reduced the leakage current density of Y 2 O 3 films by two orders of magnitude and the D it to as low as 8.72x10 10 cm -2 eV -1 . A Y 2 O 3 buffer layer grown at 400 deg. C in a 20% O 2 partial pressure and rapidly annealed at 900 deg. C in an oxygen enviroment exhibited the best overall properties for a single transistor ferroelectric random access memory

  6. Thermodynamic Model of Spatial Memory

    Science.gov (United States)

    Kaufman, Miron; Allen, P.

    1998-03-01

    We develop and test a thermodynamic model of spatial memory. Our model is an application of statistical thermodynamics to cognitive science. It is related to applications of the statistical mechanics framework in parallel distributed processes research. Our macroscopic model allows us to evaluate an entropy associated with spatial memory tasks. We find that older adults exhibit higher levels of entropy than younger adults. Thurstone's Law of Categorical Judgment, according to which the discriminal processes along the psychological continuum produced by presentations of a single stimulus are normally distributed, is explained by using a Hooke spring model of spatial memory. We have also analyzed a nonlinear modification of the ideal spring model of spatial memory. This work is supported by NIH/NIA grant AG09282-06.

  7. Efficient Management for Hybrid Memory in Managed Language Runtime

    OpenAIRE

    Wang , Chenxi; Cao , Ting; Zigman , John; Lv , Fang; Zhang , Yunquan; Feng , Xiaobing

    2016-01-01

    Part 1: Memory: Non-Volatile, Solid State Drives, Hybrid Systems; International audience; Hybrid memory, which leverages the benefits of traditional DRAM and emerging memory technologies, is a promising alternative for future main memory design. However popular management policies through memory-access recording and page migration may invoke non-trivial overhead in execution time and hardware space. Nowadays, managed language applications are increasingly dominant in every kind of platform. M...

  8. Capacitance characteristics of metal-oxide-semiconductor capacitors with a single layer of embedded nickel nanoparticles for the application of nonvolatile memory

    International Nuclear Information System (INIS)

    Wei, Li; Ling, Xu; Wei-Ming, Zhao; Hong-Lin, Ding; Zhong-Yuan, Ma; Jun, Xu; Kun-Ji, Chen

    2010-01-01

    This paper reports that metal-oxide-semiconductor (MOS) capacitors with a single layer of Ni nanoparticles were successfully fabricated by using electron-beam evaporation and rapid thermal annealing for application to nonvolatile memory. Experimental scanning electron microscopy images showed that Ni nanoparticles of about 5 nm in diameter were clearly embedded in the SiO 2 layer on p-type Si (100). Capacitance–voltage measurements of the MOS capacitor show large flat-band voltage shifts of 1.8 V, which indicate the presence of charge storage in the nickel nanoparticles. In addition, the charge-retention characteristics of MOS capacitors with Ni nanoparticles were investigated by using capacitance–time measurements. The results showed that there was a decay of the capacitance embedded with Ni nanoparticles for an electron charge after 10 4 s. But only a slight decay of the capacitance originating from hole charging was observed. The present results indicate that this technique is promising for the efficient formation or insertion of metal nanoparticles inside MOS structures. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  9. A memory module for experimental data handling

    Science.gov (United States)

    De Blois, J.

    1985-02-01

    A compact CAMAC memory module for experimental data handling was developed to eliminate the need of direct memory access in computer controlled measurements. When using autonomous controllers it also makes measurements more independent of the program and enlarges the available space for programs in the memory of the micro-computer. The memory module has three modes of operation: an increment-, a list- and a fifo mode. This is achieved by connecting the main parts, being: the memory (MEM), the fifo buffer (FIFO), the address buffer (BUF), two counters (AUX and ADDR) and a readout register (ROR), by an internal 24-bit databus. The time needed for databus operations is 1 μs, for measuring cycles as well as for CAMAC cycles. The FIFO provides temporary data storage during CAMAC cycles and separates the memory part from the application part. The memory is variable from 1 to 64K (24 bits) by using different types of memory chips. The application part, which forms 1/3 of the module, will be specially designed for each application and is added to the memory chian internal connector. The memory unit will be used in Mössbauer experiments and in thermal neutron scattering experiments.

  10. A memory module for experimental data handling

    International Nuclear Information System (INIS)

    Blois, J. de

    1985-01-01

    A compact CAMAC memory module for experimental data handling was developed to eliminate the need of direct memory access in computer controlled measurements. When using autonomous controllers it also makes measurements more independent of the program and enlarges the available space for programs in the memory of the micro-computer. The memory module has three modes of operation: an increment-, a list- and a fifo mode. This is achieved by connecting the main parts, being: the memory (MEM), the fifo buffer (FIFO), the address buffer (BUF), two counters (AUX and ADDR) and a readout register (ROR), by an internal 24-bit databus. The time needed for databus operations is 1 μs, for measuring cycles as well as for CAMAC cycles. The FIFO provides temporary data storage during CAMAC cycles and separates the memory part from the application part. The memory is variable from 1 to 64K (24 bits) by using different types of memory chips. The application part, which forms 1/3 of the module, will be specially designed for each application and is added to the memory by an internal connector. The memory unit will be used in Moessbauer experiments and in thermal neutron scattering experiments. (orig.)

  11. Exploration of Sub-VT and Near-VT 2T Gain-Cell Memories for Ultra-Low Power Applications under Technology Scaling

    Directory of Open Access Journals (Sweden)

    Alexander Fish

    2013-04-01

    Full Text Available Ultra-low power applications often require several kb of embedded memory and are typically operated at the lowest possible operating voltage (VDD to minimize both dynamic and static power consumption. Embedded memories can easily dominate the overall silicon area of these systems, and their leakage currents often dominate the total power consumption. Gain-cell based embedded DRAM arrays provide a high-density, low-leakage alternative to SRAM for such systems; however, they are typically designed for operation at nominal or only slightly scaled supply voltages. This paper presents a gain-cell array which, for the first time, targets aggressively scaled supply voltages, down into the subthreshold (sub-VT domain. Minimum VDD design of gain-cell arrays is evaluated in light of technology scaling, considering both a mature 0.18 μm CMOS node, as well as a scaled 40 nm node. We first analyze the trade-offs that characterize the bitcell design in both nodes, arriving at a best-practice design methodology for both mature and scaled technologies. Following this analysis, we propose full gain-cell arrays for each of the nodes, operated at a minimum VDD. We find that an 0.18 μm gain-cell array can be robustly operated at a sub-VT supply voltage of 400mV, providing read/write availability over 99% of the time, despite refresh cycles. This is demonstrated on a 2 kb array, operated at 1 MHz, exhibiting full functionality under parametric variations. As opposed to sub-VT operation at the mature node, we find that the scaled 40 nm node requires a near-threshold 600mV supply to achieve at least 97% read/write availability due to higher leakage currents that limit the bitcell’s retention time. Monte Carlo simulations show that a 600mV 2 kb 40 nm gain-cell array is fully functional at frequencies higher than 50 MHz.

  12. Holographic memories

    DEFF Research Database (Denmark)

    Ramanujam, P.S.; Berg, R.H.; Hvilsted, Søren

    1999-01-01

    A Two-dimensional holographic memory for archival storage is described. Assuming a coherent transfer function, an A4 page can be stored at high resolution in an area of 1 mm(2). Recently developed side-chain liquid crystalline azobenzene polyesters are found to be suitable media for holographic...

  13. Sharing Memories

    DEFF Research Database (Denmark)

    Rodil, Kasper; Nielsen, Emil Byskov; Nielsen, Jonathan Bernstorff

    2018-01-01

    in which it was to be contextualized and through a close partnership between aphasics and their caretakers. The underlying design methodology for the MemoryBook is Participatory Design manifested through the collaboration and creations by two aphasic residents and one member of the support staff. The idea...

  14. Memory consolidation

    NARCIS (Netherlands)

    Takashima, A.; Bakker, I.; Schmid, H.-J.

    2016-01-01

    In order to make use of novel experiences and knowledge to guide our future behavior, we must keep large amounts of information accessible for retrieval. The memory system that stores this information needs to be flexible in order to rapidly incorporate incoming information, but also requires that

  15. Skilled Memory.

    Science.gov (United States)

    1980-11-06

    Woodworth, R. S. Experimental Psychology. New York: Henry Holt and Co., 1938. Yates, F. A. The art of memory. London: Rutledge and Kegan Paul, 1966. 50...Group 1 Psychologist (TAEG) ON! Branch Office Dept. of the Navy 1030 East Green Street Orlando, FL 32813 Pasadena, CA 91101 1 Dr. Richard Sorensen I

  16. Use of charge storage tube in the building of a buffer memory; Application des tubes a memoire a la realisation d'une memoire tampon

    Energy Technology Data Exchange (ETDEWEB)

    Marcovici, C [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1964-07-01

    The apparatus manufactured is a buffer memory to be located between a detector and a multichannel pulse height analyser which received the pulses at regular times. The buffer memory and the detector have the same order of dead time, then the whole is equivalent to a detector plus an analyser without dead time, but that is true only if the mean time between two consecutive pulses from the detector is greater than the analyser time resolution. The apparatus used two electrostatic barrier grid tubes; the first one stores temporarily the data from the detector during the time necessary to analyse the data recorded on the other one. At the end of the analysis, the roles of the two tubes are permuted. The advantage on similar other apparatus is the uninterrupted recording of the pulse height informations from the detector and the uninterrupted analysis. In addition, the transistorization is interesting for reliability and maintainability. The document presents principles and data on the barrier grid storage tube, considers its conventional uses in nuclear electronics studies statistically the reduction of counting losses. It describes the test equipment and the tests which permits the screening of the best cathode ray storage tube for this application. Finally, it describes the item and gives the wave shapes in various points of the buffer memory. (author) [French] Le dispositif realise est une memoire tampon destinee a etre placee entre un detecteur et un selecteur d'amplitude multicanaux. Elle permet a ce dernier de recevoir et analyser les impulsions a intervalles de temps reguliers. Son temps de resolution est comparable a celui du detecteurs, l'ensemble est donc equivalent a un systeme constitue d'un detecteur suivi d'un selecteur sans temps mort, mais ceci n'est valable que tant que l'intervalle de temps moyen entre deux impulsions issues du detecteur est superieur au temps d'analyse necessite par le selecteur. Ce dispositif est constitue de deux tubes a memoire

  17. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    Science.gov (United States)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-05-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  18. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    Energy Technology Data Exchange (ETDEWEB)

    Di Pendina, G., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr; Zianbetov, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, INAC-SPINTEC, F-38000 Grenoble (France); CNRS, SPINTEC, F-38000 Grenoble (France); CEA, INAC-SPINTEC, F-38000 Grenoble (France); Beigne, E., E-mail: gregory.dipendina@cea.fr, E-mail: eldar.zianbetov@cea.fr, E-mail: edith.beigne@cea.fr [Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble (France)

    2015-05-07

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes.

  19. Magnetic Random Access Memory based non-volatile asynchronous Muller cell for ultra-low power autonomous applications

    International Nuclear Information System (INIS)

    Di Pendina, G.; Zianbetov, E.; Beigne, E.

    2015-01-01

    Micro and nano electronic integrated circuit domain is today mainly driven by the advent of the Internet of Things for which the constraints are strong, especially in terms of power consumption and autonomy, not only during the computing phases but also during the standby or idle phases. In such ultra-low power applications, the circuit has to meet new constraints mainly linked to its changing energetic environment: long idle phases, automatic wake up, data back-up when the circuit is sporadically turned off, and ultra-low voltage power supply operation. Such circuits have to be completely autonomous regarding their unstable environment, while remaining in an optimum energetic configuration. Therefore, we propose in this paper the first MRAM-based non-volatile asynchronous Muller cell. This cell has been simulated and characterized in a very advanced 28 nm CMOS fully depleted silicon-on-insulator technology, presenting good power performance results due to an extremely efficient body biasing control together with ultra-wide supply voltage range from 160 mV up to 920 mV. The leakage current can be reduced to 154 pA thanks to reverse body biasing. We also propose an efficient standard CMOS bulk version of this cell in order to be compatible with different fabrication processes

  20. Prospect of Ti-Ni shape memory alloy applied in reactor structures

    International Nuclear Information System (INIS)

    Duan Yuangang

    1995-01-01

    Shape memory effect mechanism, physical property, composition, manufacturing process and application in mechanical structure of Ti-Ni shape memory alloy are introduced. Applications of Ti-Ni shape memory alloy in reactor structure are prospected and some necessary technical conditions of shape memory alloy applied in the reactor structure are put forward initially

  1. A view of studies on listening comprehension within the theory of working memory

    OpenAIRE

    福田, 倫子

    2004-01-01

    The present paper discusses four aspects : (1) the relation between the process of language comprehension and working memory, (2) overview of studies on working memory model, (3) application of the working memory to studies of listening comprehension in previous studies, (4) potentiality of application of the working memory model to studies of listening comprehension of second language acquisition.

  2. Locating the self in autobiographical memories

    DEFF Research Database (Denmark)

    Antalikova, Radka; de la Mata, Manuel; Santamaría, Andrés

    2016-01-01

    Systematic cross-cultural variation in autobiographical memory has been demonstrated in previous research. This variation has been interpreted as mirroring differences in culturally diverging self-conceptions, implying that content characteristics of autobiographical memories can be used...... to capture how the self is present, and presented, in autobiographical memory in a more nuanced way than done in previous research. Hence, the system could be applicable for use in studies with a variety of culturally diverse populations....

  3. An overview of NiTi shape memory alloy: Corrosion resistance and antibacterial inhibition for dental application

    Energy Technology Data Exchange (ETDEWEB)

    Fadlallah, Sahar A., E-mail: sahar.fadlallah@yahoo.com [Materials and Corrosion Lab. (MCL), Faculty of Science, Taif University, Taif (Saudi Arabia); Chemistry Department, Faculty of Science, Cairo University, Cairo (Egypt); El-Bagoury, Nader [Materials and Corrosion Lab. (MCL), Faculty of Science, Taif University, Taif (Saudi Arabia); Casting Technology Lab., Manufacturing Technology Dept., CMRDI, P.O. Box 87, Helwan, Cairo (Egypt); Gad El-Rab, Sanaa M.F. [Biotechnology Department, Faculty of Science, Taif University, Taif (Saudi Arabia); Botany Department, Faculty of Science, Asuit University, Asuit (Egypt); Ahmed, Rasha A. [Materials and Corrosion Lab. (MCL), Faculty of Science, Taif University, Taif (Saudi Arabia); Forensic Chemistry Laboratories, Medico Legal Department, Ministry of Justice, Cairo (Egypt); El-Ousamii, Ghaida [Materials and Corrosion Lab. (MCL), Faculty of Science, Taif University, Taif (Saudi Arabia)

    2014-01-15

    Highlights: • Evaluate the corrosion resistance of NiTi alloy by using electrochemical techniques. • Estimate the Antibacterial inhibition rate of NiTi alloy. • Assessment the mechanical properties of NiTi from the hardness measurements. • Comparsion the microstructures of cast NiTi with Ti, this indicate the role of Ni to change the behavior of alloy in oral environment. • Advise drinking green tea in small quantities in small quantities in the event of present NiTi alloy in the oral cavity. • Recommendation to use NiTi for dental application. -- Abstract: Nowadays, Nickel–titanium nearly equiatomic is considered as one of the best biomaterials. The aim of the present work deals with the evolution of the electrochemical behavior of NiTi in simulated oral environment. The hardness, microstructures corrosion resistance and antibacterial performance of NiTi alloy were compared with pure titanium. The hardness of NiTi is twice the hardness of pure titanium. Electrochemical techniques were used to detect the corrosion resistance of both biomaterials in Hank’s solution containing (−)-epigallocatechin gallate (EGCG) which used to simulate the oral environment. In the physiological solution selected for the present study, the impedance spectroscopy (EIS) results showed that EGCG sharply increase the corrosion resistance of NiTi from 129 kΩ cm{sup 2} to 1.10 T Ω cm{sup 2} while slowly increase the corrosion resistance of pure titanium from 9.4 kΩ cm{sup 2} to 11.3 kΩ cm{sup 2} during the duration time of immersion at 37 °C. The plate-counting method was used to evaluate the antibacterial performance against Staphylococcus aureus (ATCC 6538). Among the two specimens of biomaterials studied, the antibacterial performance results revealed that the NiTi alloy is better than the pure titanium. The morphology and chemical structure of NiTi and Ti samples were systematically investigated by scanning electron microscope (SEM) and energy dispersive X

  4. An overview of NiTi shape memory alloy: Corrosion resistance and antibacterial inhibition for dental application

    International Nuclear Information System (INIS)

    Fadlallah, Sahar A.; El-Bagoury, Nader; Gad El-Rab, Sanaa M.F.; Ahmed, Rasha A.; El-Ousamii, Ghaida

    2014-01-01

    Highlights: • Evaluate the corrosion resistance of NiTi alloy by using electrochemical techniques. • Estimate the Antibacterial inhibition rate of NiTi alloy. • Assessment the mechanical properties of NiTi from the hardness measurements. • Comparsion the microstructures of cast NiTi with Ti, this indicate the role of Ni to change the behavior of alloy in oral environment. • Advise drinking green tea in small quantities in small quantities in the event of present NiTi alloy in the oral cavity. • Recommendation to use NiTi for dental application. -- Abstract: Nowadays, Nickel–titanium nearly equiatomic is considered as one of the best biomaterials. The aim of the present work deals with the evolution of the electrochemical behavior of NiTi in simulated oral environment. The hardness, microstructures corrosion resistance and antibacterial performance of NiTi alloy were compared with pure titanium. The hardness of NiTi is twice the hardness of pure titanium. Electrochemical techniques were used to detect the corrosion resistance of both biomaterials in Hank’s solution containing (−)-epigallocatechin gallate (EGCG) which used to simulate the oral environment. In the physiological solution selected for the present study, the impedance spectroscopy (EIS) results showed that EGCG sharply increase the corrosion resistance of NiTi from 129 kΩ cm 2 to 1.10 T Ω cm 2 while slowly increase the corrosion resistance of pure titanium from 9.4 kΩ cm 2 to 11.3 kΩ cm 2 during the duration time of immersion at 37 °C. The plate-counting method was used to evaluate the antibacterial performance against Staphylococcus aureus (ATCC 6538). Among the two specimens of biomaterials studied, the antibacterial performance results revealed that the NiTi alloy is better than the pure titanium. The morphology and chemical structure of NiTi and Ti samples were systematically investigated by scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDX). The

  5. Memory reconsolidation in aversive and appetitive settings

    Directory of Open Access Journals (Sweden)

    Amy Claire Reichelt

    2013-09-01

    Full Text Available Memory reconsolidation has been observed across species and in a number of behavioural paradigms. The majority of memory reconsolidation studies have been carried out in pavlovian fear conditioning and other aversive memory settings, with potential implications for the treatment of post-traumatic stress disorder. However, there is a growing literature on memory reconsolidation in appetitive reward-related memory paradigms, including translational models of drug addiction. While there appears to be substantial similarity in the basic phenomenon and underlying mechanisms of memory reconsolidation across unconditioned stimulus valence, there are also notable discrepancies. These arise both when comparing aversive to appetitive paradigms and also across different paradigms within the same valence of memory. We review the demonstration of memory reconsolidation across different aversive and appetitive memory paradigms, the commonalities and differences in underlying mechanisms and the conditions under which each memory undergoes reconsolidation. We focus particularly on whether principles derived from the aversive literature are applicable to appetitive settings, and also whether the expanding literature in appetitive paradigms is informative for fear memory reconsolidation.

  6. Synthesis of shape memory alloys using electrodeposition

    Science.gov (United States)

    Hymer, Timothy Roy

    Shape memory alloys are used in a variety of applications. The area of micro-electro-mechanical systems (MEMS) is a developing field for thin film shape memory alloys for making actuators, valves and pumps. Until recently thin film shape memory alloys could only be made by rapid solidification or sputtering techniques which have the disadvantage of being "line of sight". At the University of Missouri-Rolla, electrolytic techniques have been developed that allow the production of shape memory alloys in thin film form. The advantages of this techniques are in-situ, non "line of sight" and the ability to make differing properties of the shape memory alloys from one bath. This research focused on the electrodeposition of In-Cd shape memory alloys. The primary objective was to characterize the electrodeposited shape memory effect for an electrodeposited shape memory alloy. The effect of various operating parameters such as peak current density, temperature, pulsing, substrate and agitation were investigated and discussed. The electrodeposited alloys were characterized by relative shape memory effect, phase transformation, morphology and phases present. Further tests were performed to optimize the shape memory by the use of a statistically designed experiment. An optimized shape memory effect for an In-Cd alloy is reported for the conditions of the experiments.

  7. Nanoscale phase change memory materials.

    Science.gov (United States)

    Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

    2012-08-07

    Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

  8. Concrete Memories

    DEFF Research Database (Denmark)

    Wiegand, Frauke Katharina

    2015-01-01

    This article traces the presence of Atlantikwall bunkers in amateur holiday snapshots and discusses the ambiguous role of the bunker site in visual cultural memory. Departing from my family’s private photo collection from twenty years of vacationing at the Danish West coast, the different mundane...... and poetic appropriations and inscriptions of the bunker site are depicted. Ranging between overlooked side presences and an overwhelming visibility, the concrete remains of fascist war architecture are involved in and motivate different sensuous experiences and mnemonic appropriations. The article meets...... the bunkers’ changing visuality and the cultural topography they both actively transform and are being transformed by through juxtaposing different acts and objects of memory over time and in different visual articulations....

  9. Magnetic shape memory behaviour

    International Nuclear Information System (INIS)

    Brown, P.J.; Gandy, A.P.; Ishida, K.; Kainuma, R.; Kanomata, T.; Matsumoto, M.; Morito, H.; Neumann, K.-U.; Oikawa, K.; Ouladdiaf, B.; Ziebeck, K.R.A.

    2007-01-01

    Materials that can be transformed at one temperature T F , then cooled to a lower temperature T M and plastically deformed and on heating to T F regain their original shape are currently receiving considerable attention. In recovering their shape the alloys can produce a displacement or a force, or a combination of the two. Such behaviour is known as the shape memory effect and usually takes place by change of temperature or applied stress. For many applications the transformation is not sufficiently rapid or a change in temperature/pressure not appropriate. As a result, considerable effort is being made to find a ferromagnetic system in which the effect can be controlled by an applied magnetic field. The results of recent experiments on ferromagnetic shape memory compounds aimed at understanding the underlying mechanism will be reviewed

  10. Treadwell Memorial

    OpenAIRE

    Downey, Frances K

    2015-01-01

    This is a memorial to gold mining in Southeast Alaska. The structure takes visitors from the Treadwell trail onto the edge of a popular local beach, reclaiming a forgotten place that was once the largest gold mine in the world. A tangible tribute to this obscure period of history, this building kindles a connection between artifacts and the community. It is a liminal space, connecting ocean and mountain, past and present, civilization and wilderness. An investigation of the Treadwell Gold...

  11. A Memory Efficient Network Encryption Scheme

    Science.gov (United States)

    El-Fotouh, Mohamed Abo; Diepold, Klaus

    In this paper, we studied the two widely used encryption schemes in network applications. Shortcomings have been found in both schemes, as these schemes consume either more memory to gain high throughput or low memory with low throughput. The need has aroused for a scheme that has low memory requirements and in the same time possesses high speed, as the number of the internet users increases each day. We used the SSM model [1], to construct an encryption scheme based on the AES. The proposed scheme possesses high throughput together with low memory requirements.

  12. An Implementation Method of the Fractional-Order PID Control System Considering the Memory Constraint and its Application to the Temperature Control of Heat Plate

    Science.gov (United States)

    Sasano, Koji; Okajima, Hiroshi; Matsunaga, Nobutomo

    Recently, the fractional order PID (FO-PID) control, which is the extension of the PID control, has been focused on. Even though the FO-PID requires the high-order filter, it is difficult to realize the high-order filter due to the memory limitation of digital computer. For implementation of FO-PID, approximation of the fractional integrator and differentiator are required. Short memory principle (SMP) is one of the effective approximation methods. However, there is a disadvantage that the approximated filter with SMP cannot eliminate the steady-state error. For this problem, we introduce the distributed implementation of the integrator and the dynamic quantizer to make the efficient use of permissible memory. The objective of this study is to clarify how to implement the accurate FO-PID with limited memories. In this paper, we propose the implementation method of FO-PID with memory constraint using dynamic quantizer. And the trade off between approximation of fractional elements and quantized data size are examined so as to close to the ideal FO-PID responses. The effectiveness of proposed method is evaluated by numerical example and experiment in the temperature control of heat plate.

  13. Spatial memory and animal movement.

    Science.gov (United States)

    Fagan, William F; Lewis, Mark A; Auger-Méthé, Marie; Avgar, Tal; Benhamou, Simon; Breed, Greg; LaDage, Lara; Schlägel, Ulrike E; Tang, Wen-wu; Papastamatiou, Yannis P; Forester, James; Mueller, Thomas

    2013-10-01

    Memory is critical to understanding animal movement but has proven challenging to study. Advances in animal tracking technology, theoretical movement models and cognitive sciences have facilitated research in each of these fields, but also created a need for synthetic examination of the linkages between memory and animal movement. Here, we draw together research from several disciplines to understand the relationship between animal memory and movement processes. First, we frame the problem in terms of the characteristics, costs and benefits of memory as outlined in psychology and neuroscience. Next, we provide an overview of the theories and conceptual frameworks that have emerged from behavioural ecology and animal cognition. Third, we turn to movement ecology and summarise recent, rapid developments in the types and quantities of available movement data, and in the statistical measures applicable to such data. Fourth, we discuss the advantages and interrelationships of diverse modelling approaches that have been used to explore the memory-movement interface. Finally, we outline key research challenges for the memory and movement communities, focusing on data needs and mathematical and computational challenges. We conclude with a roadmap for future work in this area, outlining axes along which focused research should yield rapid progress. © 2013 John Wiley & Sons Ltd/CNRS.

  14. Transactional Memory

    CERN Document Server

    Harris, Tim; Rajwar, Ravi

    2010-01-01

    The advent of multicore processors has renewed interest in the idea of incorporating transactions into the programming model used to write parallel programs.This approach, known as transactional memory, offers an alternative, and hopefully better, way to coordinate concurrent threads. The ACI(atomicity, consistency, isolation) properties of transactions provide a foundation to ensure that concurrent reads and writes of shared data do not produce inconsistent or incorrect results. At a higher level, a computation wrapped in a transaction executes atomically - either it completes successfullyand

  15. Neutron detection and characterization for non-proliferation applications using 3D computer optical memories [Use of 3D optical computer memory for radiation detectors/dosimeters. Final progress report

    International Nuclear Information System (INIS)

    Phillips, Gary W.

    2000-01-01

    We have investigated 3-dimensional optical random access memory (3D-ORAM) materials for detection and characterization of charged particles of neutrons by detecting tracks left by the recoil charged particles produced by the neutrons. We have characterized the response of these materials to protons, alpha particles and carbon-12 nuclei as a functions of dose and energy. We have observed individual tracks using scanning electron microscopy and atomic force microscopy. We are investigating the use of neural net analysis to characterize energetic neutron fields from their track structure in these materials

  16. Using Ternary Alloy Additions to Engineer Nitinol Shape Memory Alloys

    Data.gov (United States)

    National Aeronautics and Space Administration — Improving travel capabilities is essential in order to further investigative space exploration. For aerospace applications, weight savings is essential. Shape memory...

  17. Intentionally fabricated autobiographical memories

    OpenAIRE

    Justice, LV; Morrison, CM; Conway, MA

    2017-01-01

    Participants generated both autobiographical memories (AMs) that they believed to be true and intentionally fabricated autobiographical memories (IFAMs). Memories were constructed while a concurrent memory load (random 8-digit sequence) was held in mind or while there was no concurrent load. Amount and accuracy of recall of the concurrent memory load was reliably poorer following generation of IFAMs than following generation of AMs. There was no reliable effect of load on memory generation ti...

  18. STRUKTUR DAN PROSES MEMORI

    Directory of Open Access Journals (Sweden)

    Magda Bhinnety

    2015-09-01

    Full Text Available This paper describes structures and processes of human memory system according to the modal model. Sensory memory is described as the first system to store information from outside world. Short‐term memory, or now called working memory, represents a system characterized by limited ability in storing as well as retrieving information. Long‐term memory on the hand stores information larger in amount and longer than short‐term memory

  19. STRUKTUR DAN PROSES MEMORI

    OpenAIRE

    Bhinnety, Magda

    2015-01-01

    This paper describes structures and processes of human memory system according to the modal model. Sensory memory is described as the first system to store information from outside world. Short‐term memory, or now called working memory, represents a system characterized by limited ability in storing as well as retrieving information. Long‐term memory on the hand stores information larger in amount and longer than short‐term memory

  20. All-printed paper memory

    KAUST Repository

    Lien, Derhsien; Kao, Zhenkai; Huang, Tenghan; Liao, Yingchih; Lee, Sichen; He, Jr-Hau

    2014-01-01

    . In addition, the PBMD can be labeled on electronics or living objects for multifunctional, wearable, on-skin, and biocompatible applications. The disposability and the high-security data storage of the paper-based memory are also demonstrated to show the ease

  1. Dynamic memory management for embedded systems

    CERN Document Server

    Atienza Alonso, David; Poucet, Christophe; Peón-Quirós, Miguel; Bartzas, Alexandros; Catthoor, Francky; Soudris, Dimitrios

    2015-01-01

    This book provides a systematic and unified methodology, including basic principles and reusable processes, for dynamic memory management (DMM) in embedded systems.  The authors describe in detail how to design and optimize the use of dynamic memory in modern, multimedia and network applications, targeting the latest generation of portable embedded systems, such as smartphones. Coverage includes a variety of design and optimization topics in electronic design automation of DMM, from high-level software optimization to microarchitecture-level hardware support. The authors describe the design of multi-layer dynamic data structures for the final memory hierarchy layers of the target portable embedded systems and how to create a low-fragmentation, cost-efficient, dynamic memory management subsystem out of configurable components for the particular memory allocation and de-allocation patterns for each type of application.  The design methodology described in this book is based on propagating constraints among de...

  2. Electroconvulsive therapy and memory.

    Science.gov (United States)

    Harper, R G; Wiens, A N

    1975-10-01

    Recent research on the effects of electroconvulsive therapy (ECT) on memory is critically reviewed. Despite some inconsistent findings, unilateral nondominant ECT appears to affect verbal memory less than bilateral ECT. Adequate research on multiple monitored ECT is lacking. With few exceptions, the research methodologies for assessing memory have been inadequate. Many studies have confounded learning with retention, and only very recently has long term memory been adequately studied. Standardized assessment procedures for short term and long term memory are needed, in addition to more sophisticated assessment of memory processes, the duration of memory loss, and qualitative aspects of memories.

  3. Detailed sensory memory, sloppy working memory

    NARCIS (Netherlands)

    Sligte, I.G.; Vandenbroucke, A.R.E.; Scholte, H.S.; Lamme, V.A.F.

    2010-01-01

    Visual short-term memory (VSTM) enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity

  4. Episodic memory, semantic memory, and amnesia.

    Science.gov (United States)

    Squire, L R; Zola, S M

    1998-01-01

    Episodic memory and semantic memory are two types of declarative memory. There have been two principal views about how this distinction might be reflected in the organization of memory functions in the brain. One view, that episodic memory and semantic memory are both dependent on the integrity of medial temporal lobe and midline diencephalic structures, predicts that amnesic patients with medial temporal lobe/diencephalic damage should be proportionately impaired in both episodic and semantic memory. An alternative view is that the capacity for semantic memory is spared, or partially spared, in amnesia relative to episodic memory ability. This article reviews two kinds of relevant data: 1) case studies where amnesia has occurred early in childhood, before much of an individual's semantic knowledge has been acquired, and 2) experimental studies with amnesic patients of fact and event learning, remembering and knowing, and remote memory. The data provide no compelling support for the view that episodic and semantic memory are affected differently in medial temporal lobe/diencephalic amnesia. However, episodic and semantic memory may be dissociable in those amnesic patients who additionally have severe frontal lobe damage.

  5. Optical memory

    Science.gov (United States)

    Mao, Samuel S; Zhang, Yanfeng

    2013-07-02

    Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

  6. A Return to the "Treasure-House of Invention": Memory in the Composition Classroom.

    Science.gov (United States)

    Cypert, Rick

    1989-01-01

    Considers how memory contributes to a writer's developing capacity for self-expression. Notes that modern applications of classical memory ("memoria verborum"/natural memory and "memoria rerum"/artificial memory) enable students to generate details that flesh out their texts as well as provide meaning to those texts. (MM)

  7. Memory Indexing: A Novel Method for Tracing Memory Processes in Complex Cognitive Tasks

    Science.gov (United States)

    Renkewitz, Frank; Jahn, Georg

    2012-01-01

    We validate an eye-tracking method applicable for studying memory processes in complex cognitive tasks. The method is tested with a task on probabilistic inferences from memory. It provides valuable data on the time course of processing, thus clarifying previous results on heuristic probabilistic inference. Participants learned cue values of…

  8. VOP memory management in MPEG-4

    Science.gov (United States)

    Vaithianathan, Karthikeyan; Panchanathan, Sethuraman

    2001-03-01

    MPEG-4 is a multimedia standard that requires Video Object Planes (VOPs). Generation of VOPs for any kind of video sequence is still a challenging problem that largely remains unsolved. Nevertheless, if this problem is treated by imposing certain constraints, solutions for specific application domains can be found. MPEG-4 applications in mobile devices is one such domain where the opposite goals namely low power and high throughput are required to be met. Efficient memory management plays a major role in reducing the power consumption. Specifically, efficient memory management for VOPs is difficult because the lifetimes of these objects vary and these life times may be overlapping. Varying life times of the objects requires dynamic memory management where memory fragmentation is a key problem that needs to be addressed. In general, memory management systems address this problem by following a combination of strategy, policy and mechanism. For MPEG4 based mobile devices that lack instruction processors, a hardware based memory management solution is necessary. In MPEG4 based mobile devices that have a RISC processor, using a Real time operating system (RTOS) for this memory management task is not expected to be efficient because the strategies and policies used by the ROTS is often tuned for handling memory segments of smaller sizes compared to object sizes. Hence, a memory management scheme specifically tuned for VOPs is important. In this paper, different strategies, policies and mechanisms for memory management are considered and an efficient combination is proposed for the case of VOP memory management along with a hardware architecture, which can handle the proposed combination.

  9. A Survey of Phase Change Memory Systems

    Institute of Scientific and Technical Information of China (English)

    夏飞; 蒋德钧; 熊劲; 孙凝晖

    2015-01-01

    As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

  10. Thermoviscoelastic shape memory behavior for epoxy-shape memory polymer

    International Nuclear Information System (INIS)

    Chen, Jianguo; Liu, Liwu; Liu, Yanju; Leng, Jinsong

    2014-01-01

    There are various applications for shape memory polymer (SMP) in the smart materials and structures field due to its large recoverable strain and controllable driving method. The mechanical shape memory deformation mechanism is so obscure that many samples and test schemes have to be tried in order to verify a final design proposal for a smart structure system. This paper proposes a simple and very useful method to unambiguously analyze the thermoviscoelastic shape memory behavior of SMP smart structures. First, experiments under different temperature and loading conditions are performed to characterize the large deformation and thermoviscoelastic behavior of epoxy-SMP. Then, a rheological constitutive model, which is composed of a revised standard linear solid (SLS) element and a thermal expansion element, is proposed for epoxy-SMP. The thermomechanical coupling effect and nonlinear viscous flowing rules are considered in the model. Then, the model is used to predict the measured rubbery and time-dependent response of the material, and different thermomechanical loading histories are adopted to verify the shape memory behavior of the model. The results of the calculation agree with experiments satisfactorily. The proposed shape memory model is practical for the design of SMP smart structures. (paper)

  11. Memory, microprocessor, and ASIC

    CERN Document Server

    Chen, Wai-Kai

    2003-01-01

    System Timing. ROM/PROM/EPROM. SRAM. Embedded Memory. Flash Memories. Dynamic Random Access Memory. Low-Power Memory Circuits. Timing and Signal Integrity Analysis. Microprocessor Design Verification. Microprocessor Layout Method. Architecture. ASIC Design. Logic Synthesis for Field Programmable Gate Array (EPGA) Technology. Testability Concepts and DFT. ATPG and BIST. CAD Tools for BIST/DFT and Delay Faults.

  12. Infant Visual Recognition Memory

    Science.gov (United States)

    Rose, Susan A.; Feldman, Judith F.; Jankowski, Jeffery J.

    2004-01-01

    Visual recognition memory is a robust form of memory that is evident from early infancy, shows pronounced developmental change, and is influenced by many of the same factors that affect adult memory; it is surprisingly resistant to decay and interference. Infant visual recognition memory shows (a) modest reliability, (b) good discriminant…

  13. Nanoscale memory devices

    International Nuclear Information System (INIS)

    Chung, Andy; Deen, Jamal; Lee, Jeong-Soo; Meyyappan, M

    2010-01-01

    This article reviews the current status and future prospects for the use of nanomaterials and devices in memory technology. First, the status and continuing scaling trends of the flash memory are discussed. Then, a detailed discussion on technologies trying to replace flash in the near-term is provided. This includes phase change random access memory, Fe random access memory and magnetic random access memory. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO 2 . (topical review)

  14. Visual memory needs categories

    OpenAIRE

    Olsson, Henrik; Poom, Leo

    2005-01-01

    Capacity limitations in the way humans store and process information in working memory have been extensively studied, and several memory systems have been distinguished. In line with previous capacity estimates for verbal memory and memory for spatial information, recent studies suggest that it is possible to retain up to four objects in visual working memory. The objects used have typically been categorically different colors and shapes. Because knowledge about categories is stored in long-t...

  15. Non-volatile memories

    CERN Document Server

    Lacaze, Pierre-Camille

    2014-01-01

    Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

  16. Memory: sins and virtues

    OpenAIRE

    Schacter, Daniel L.

    2013-01-01

    Memory plays an important role in everyday life but does not provide an exact and unchanging record of experience: research has documented that memory is a constructive process that is subject to a variety of errors and distortions. Yet these memory “sins” also reflect the operation of adaptive aspects of memory. Memory can thus be characterized as an adaptive constructive process, which plays a functional role in cognition but produces distortions, errors, or illusions as a consequence of d...

  17. Multi-level storage and ultra-high speed of superlattice-like Ge50Te50/Ge8Sb92 thin film for phase-change memory application.

    Science.gov (United States)

    Wu, Weihua; Chen, Shiyu; Zhai, Jiwei; Liu, Xinyi; Lai, Tianshu; Song, Sannian; Song, Zhitang

    2017-10-06

    Superlattice-like Ge 50 Te 50 /Ge 8 Sb 92 (SLL GT/GS) thin film was systematically investigated for multi-level storage and ultra-fast switching phase-change memory application. In situ resistance measurement indicates that SLL GT/GS thin film exhibits two distinct resistance steps with elevated temperature. The thermal stability of the amorphous state and intermediate state were evaluated with the Kissinger and Arrhenius plots. The phase-structure evolution revealed that the amorphous SLL GT/GS thin film crystallized into rhombohedral Sb phase first, then the rhombohedral GeTe phase. The microstructure, layered structure, and interface stability of SLL GT/GS thin film was confirmed by using transmission electron microscopy. The transition speed of crystallization and amorphization was measured by the picosecond laser pump-probe system. The volume variation during the crystallization was obtained from x-ray reflectivity. Phase-change memory (PCM) cells based on SLL GT/GS thin film were fabricated to verify the multi-level switching under an electrical pulse as short as 30 ns. These results illustrate that the SLL GT/GS thin film has great potentiality in high-density and high-speed PCM applications.

  18. Engineering Nanoscale Multiferroic Composites for Memory Applications with Atomic Layer Deposition of Pb(ZrxTi1-x)O3 Thin Films

    Science.gov (United States)

    Chien, Diana

    of substrate clamping. The out-of-plane magnetization showed that the mesoporous CFO coated with 3-nm-thick PZT film had a greater saturation magnetization change of 15% compared to 10% for the 6-nm-thick PZT film. This indicates that the flexibility in the partially filled pores enhances the ME coupling. Additionally, ALD PZT films were integrated between MgO and CoFeB layers to fabricate magnetic tunnel junctions (MTJ), which was the first work to demonstrate increased voltage controlled magnetic anisotropy (VCMA) effect in a complete MTJ stack using a high dielectric material within the tunnel barrier and exhibit sizeable tunneling magnetoresistance (TMR) at room temperature. The fabricated PZT MTJs with the MgO/PZT/MgO barrier demonstrated a VCMA coefficient which is ˜40% higher (20 fJ/V-m) than MgO MTJs (14 fJ/V-m) and TMR of more than 50% at room temperature, comparable to that of the MgO MTJs. The enhanced VCMA coefficient and sizeable TMR makes PZT MTJs potential candidates for future voltage-controlled, ultralow-power magnetic random access memory devices. ALD enables the growth of conformal ultra-thin PZT films, which can then be integrated to engineer nanoscale multiferroic composites for various applications.

  19. All-printed paper memory

    KAUST Repository

    Lien, Derhsien

    2014-08-26

    We report the memory device on paper by means of an all-printing approach. Using a sequence of inkjet and screen-printing techniques, a simple metal-insulator-metal device structure is fabricated on paper as a resistive random access memory with a potential to reach gigabyte capacities on an A4 paper. The printed-paper-based memory devices (PPMDs) exhibit reproducible switching endurance, reliable retention, tunable memory window, and the capability to operate under extreme bending conditions. In addition, the PBMD can be labeled on electronics or living objects for multifunctional, wearable, on-skin, and biocompatible applications. The disposability and the high-security data storage of the paper-based memory are also demonstrated to show the ease of data handling, which are not achievable for regular silicon-based electronic devices. We envision that the PPMDs manufactured by this cost-effective and time-efficient all-printing approach would be a key electronic component to fully activate a paper-based circuit and can be directly implemented in medical biosensors, multifunctional devices, and self-powered systems. © 2014 American Chemical Society.

  20. [Application of compression equipment using the "form memory" effect and super-elasticity of titanium nickelide in surgery for rectal cancer].

    Science.gov (United States)

    Vlasov, A A; Vazhenin, A V; Plotnikov, V V; Spirev, V V; Chinarev, Iu B

    2010-01-01

    The study is concerned with development of equipment for forming circular compression intestinal anastomosis using the "form memory" effect and super-elasticity of titanium nickelide. A sequence of technological operations is suggested, experimental tests and clinical trials carried out and immediate and end-results for anterior resection in rectal cancer are evaluated. Compression equipment for forming colorectal anastomosis proved reliable in long-term operation.

  1. Impact of process parameters on the structural and electrical properties of metal/PZT/Al2O3/silicon gate stack for non-volatile memory applications

    Science.gov (United States)

    Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

    2018-02-01

    In this paper, we present the structural and electrical properties of the Al2O3 buffer layer on non-volatile memory behavior using Metal/PZT/Al2O3/Silicon structures. Metal/PZT/Silicon and Metal/Al2O3/Silicon structures were also fabricated and characterized to obtain capacitance and leakage current parameters. Lead zirconate titanate (PZT::35:65) and Al2O3 films were deposited by sputtering on the silicon substrate. Memory window, PUND, endurance, breakdown voltage, effective charges, flat-band voltage and leakage current density parameters were measured and the effects of process parameters on the structural and electrical characteristics were investigated. X-ray data show dominant (110) tetragonal phase of the PZT film, which crystallizes at 500 °C. The sputtered Al2O3 film annealed at different temperatures show dominant (312) orientation and amorphous nature at 425 °C. Multiple angle laser ellipsometric analysis reveals the temperature dependence of PZT film refractive index and extinction coefficient. Electrical characterization shows the maximum memory window of 3.9 V and breakdown voltage of 25 V for the Metal/Ferroelectric/Silicon (MFeS) structures annealed at 500 °C. With 10 nm Al2O3 layer in the Metal/Ferroelectric/Insulator/Silicon (MFeIS) structure, the memory window and breakdown voltage was improved to 7.21 and 35 V, respectively. Such structures show high endurance with no significant reduction polarization charge for upto 2.2 × 109 iteration cycles.

  2. Analysis of SEL on Commercial SRAM Memories and Mixed-Field Characterization of a Latchup Detection Circuit for LEO Space Applications

    Science.gov (United States)

    Secondo, R.; Alía, R. Garcia; Peronnard, P.; Brugger, M.; Masi, A.; Danzeca, S.; Merlenghi, A.; Vaillé, J.-R.; Dusseau, L.

    2017-08-01

    A single event latchup (SEL) experiment based on commercial static random access memory (SRAM) memories has recently been proposed in the framework of the European Organization for Nuclear Research (CERN) Latchup Experiment and Student Satellite nanosatellite low Earth orbit (LEO) space mission. SEL characterization of three commercial SRAM memories has been carried out at the Paul Scherrer Institut (PSI) facility, using monoenergetic focused proton beams and different acquisition setups. The best target candidate was selected and a circuit for SEL detection has been proposed and tested at CERN, in the CERN High Energy AcceleRator Mixed-field facility (CHARM). Experimental results were carried out at test locations representative of the LEO environment, thus providing a full characterization of the SRAM cross sections, together with the analysis of the single-event effect and total ionizing dose of the latchup detection circuit in relation to the particle spectra expected during mission. The setups used for SEL monitoring are described, and details of the proposed circuit components and topology are presented. Experimental results obtained both at PSI and at CHARM facilities are discussed.

  3. Age, memory type, and the phenomenology of autobiographical memory: findings from an Italian sample.

    Science.gov (United States)

    Montebarocci, Ornella; Luchetti, Martina; Sutin, Angelina R

    2014-01-01

    The present research explored differences in phenomenology between two types of memories, a general self-defining memory and an earliest childhood memory. A sample of 76 Italian participants were selected and categorised into two age groups: 20-30 years and 31-40 years. The Memory Experiences Questionnaire (MEQ) was administered, taking note of latency and duration times of the narratives. Consistent with the literature, the self-defining memory differed significantly from the earliest childhood memory in terms of phenomenology, with the recency of the memory associated with more intense phenomenological experience. The self-defining memory took longer to retrieve and narrate than the earliest childhood memory. Meaningful differences also emerged between the two age groups: Participants in their 30s rated their self-defining memory as more vivid, coherent, and accessible than participants in their 20s. According to latency findings, these differences suggest an expanded period of identity consolidation for younger adults. Further applications of the MEQ should be carried out to replicate these results with other samples of young adults.

  4. Salam Memorial

    CERN Document Server

    Rubbia, Carlo

    1997-01-01

    by T.W.B. KIBBLE / Blackett Laboratory, Imperial College, London. Recollections of Abdus Salam at Imperial College I shall give a personal account of Professor Salam's life and work from the perspective of a colleague at Imperial College, concentrating particularly but not exclusively on the period leading up to the discovery of the electro-weak theory. If necessary I could perhaps give more detail, but only once I have given more thought to what ground I shall cover. by Sheldon Lee GLASHOW / Harvard University, Cambridge, MA, USA. Memories of Abdus Salam. My interactions with Abdus Salam, weak as they have been, extended over five decades. I regret that we never once collaborated in print or by correspondence. I visited Abdus only twice in London and twice again in Trieste, and met him at the occasional conference or summer school. Our face-to-face encounters could be counted on one's fingers and toes, but we became the best of friends. Others will discuss Abdus as an inspiring teacher, as a great scientist,...

  5. A compact PE memory for vision chips

    Science.gov (United States)

    Cong, Shi; Zhe, Chen; Jie, Yang; Nanjian, Wu; Zhihua, Wang

    2014-09-01

    This paper presents a novel compact memory in the processing element (PE) for single-instruction multiple-data (SIMD) vision chips. The PE memory is constructed with 8 × 8 register cells, where one latch in the slave stage is shared by eight latches in the master stage. The memory supports simultaneous read and write on the same address in one clock cycle. Its compact area of 14.33 μm2/bit promises a higher integration level of the processor. A prototype chip with a 64 × 64 PE array is fabricated in a UMC 0.18 μm CMOS technology. Five types of the PE memory cell structure are designed and compared. The testing results demonstrate that the proposed PE memory architecture well satisfies the requirement of the vision chip in high-speed real-time vision applications, such as 1000 fps edge extraction.

  6. External-Memory Algorithms and Data Structures

    DEFF Research Database (Denmark)

    Arge, Lars; Zeh, Norbert

    2010-01-01

    The data sets involved in many modern applications are often too massive to fit in main memory of even the most powerful computers and must therefore reside on disk. Thus communication between internal and external memory, and not actual computation time, becomes the bottleneck in the computation....... This is due to the huge difference in access time of fast internal memory and slower external memory such as disks. The goal of theoretical work in the area of external memory algorithms (also called I/O algorithms or out-of-core algorithms) has been to develop algorithms that minimize the Input...... in parallel and the use of parallel disks has received a lot of theoretical attention. See below for recent surveys of theoretical results in the area of I/O-efficient algorithms. TPIE is designed to bridge the gap between the theory and practice of parallel I/O systems. It is intended to demonstrate all...

  7. Distributed-Memory Fast Maximal Independent Set

    Energy Technology Data Exchange (ETDEWEB)

    Kanewala Appuhamilage, Thejaka Amila J.; Zalewski, Marcin J.; Lumsdaine, Andrew

    2017-09-13

    The Maximal Independent Set (MIS) graph problem arises in many applications such as computer vision, information theory, molecular biology, and process scheduling. The growing scale of MIS problems suggests the use of distributed-memory hardware as a cost-effective approach to providing necessary compute and memory resources. Luby proposed four randomized algorithms to solve the MIS problem. All those algorithms are designed focusing on shared-memory machines and are analyzed using the PRAM model. These algorithms do not have direct efficient distributed-memory implementations. In this paper, we extend two of Luby’s seminal MIS algorithms, “Luby(A)” and “Luby(B),” to distributed-memory execution, and we evaluate their performance. We compare our results with the “Filtered MIS” implementation in the Combinatorial BLAS library for two types of synthetic graph inputs.

  8. Radiation Damage in Electronic Memory Devices

    Directory of Open Access Journals (Sweden)

    Irfan Fetahović

    2013-01-01

    Full Text Available This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simulation method. Obtained results show that gamma radiation causes decrease in threshold voltage, being proportional to the absorbed dose of radiation. Monte Carlo simulations of radiation interaction with material proved to be significant and can be a good estimation tool in probing semiconductor memory behavior in radiation environment.

  9. A compact PE memory for vision chips

    International Nuclear Information System (INIS)

    Shi Cong; Chen Zhe; Yang Jie; Wu Nanjian; Wang Zhihua

    2014-01-01

    This paper presents a novel compact memory in the processing element (PE) for single-instruction multiple-data (SIMD) vision chips. The PE memory is constructed with 8 × 8 register cells, where one latch in the slave stage is shared by eight latches in the master stage. The memory supports simultaneous read and write on the same address in one clock cycle. Its compact area of 14.33 μm 2 /bit promises a higher integration level of the processor. A prototype chip with a 64 × 64 PE array is fabricated in a UMC 0.18 μm CMOS technology. Five types of the PE memory cell structure are designed and compared. The testing results demonstrate that the proposed PE memory architecture well satisfies the requirement of the vision chip in high-speed real-time vision applications, such as 1000 fps edge extraction. (semiconductor integrated circuits)

  10. Partitioned key-value store with atomic memory operations

    Energy Technology Data Exchange (ETDEWEB)

    Bent, John M.; Faibish, Sorin; Grider, Gary

    2017-02-07

    A partitioned key-value store is provided that supports atomic memory operations. A server performs a memory operation in a partitioned key-value store by receiving a request from an application for at least one atomic memory operation, the atomic memory operation comprising a memory address identifier; and, in response to the atomic memory operation, performing one or more of (i) reading a client-side memory location identified by the memory address identifier and storing one or more key-value pairs from the client-side memory location in a local key-value store of the server; and (ii) obtaining one or more key-value pairs from the local key-value store of the server and writing the obtained one or more key-value pairs into the client-side memory location identified by the memory address identifier. The server can perform functions obtained from a client-side memory location and return a result to the client using one or more of the atomic memory operations.

  11. One bipolar transistor selector - One resistive random access memory device for cross bar memory array

    Science.gov (United States)

    Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

    2017-09-01

    A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

  12. Organizational memory: from expectations memory to procedural memory

    NARCIS (Netherlands)

    Ebbers, J.J.; Wijnberg, N.M.

    2009-01-01

    Organizational memory is not just the stock of knowledge about how to do things, but also of expectations of organizational members vis-à-vis each other and the organization as a whole. The central argument of this paper is that this second type of organizational memory -organizational expectations

  13. Biodegradable Shape Memory Polymers in Medicine.

    Science.gov (United States)

    Peterson, Gregory I; Dobrynin, Andrey V; Becker, Matthew L

    2017-11-01

    Shape memory materials have emerged as an important class of materials in medicine due to their ability to change shape in response to a specific stimulus, enabling the simplification of medical procedures, use of minimally invasive techniques, and access to new treatment modalities. Shape memory polymers, in particular, are well suited for such applications given their excellent shape memory performance, tunable materials properties, minimal toxicity, and potential for biodegradation and resorption. This review provides an overview of biodegradable shape memory polymers that have been used in medical applications. The majority of biodegradable shape memory polymers are based on thermally responsive polyesters or polymers that contain hydrolyzable ester linkages. These materials have been targeted for use in applications pertaining to embolization, drug delivery, stents, tissue engineering, and wound closure. The development of biodegradable shape memory polymers with unique properties or responsiveness to novel stimuli has the potential to facilitate the optimization and development of new medical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Visual Memories Bypass Normalization.

    Science.gov (United States)

    Bloem, Ilona M; Watanabe, Yurika L; Kibbe, Melissa M; Ling, Sam

    2018-05-01

    How distinct are visual memory representations from visual perception? Although evidence suggests that briefly remembered stimuli are represented within early visual cortices, the degree to which these memory traces resemble true visual representations remains something of a mystery. Here, we tested whether both visual memory and perception succumb to a seemingly ubiquitous neural computation: normalization. Observers were asked to remember the contrast of visual stimuli, which were pitted against each other to promote normalization either in perception or in visual memory. Our results revealed robust normalization between visual representations in perception, yet no signature of normalization occurring between working memory stores-neither between representations in memory nor between memory representations and visual inputs. These results provide unique insight into the nature of visual memory representations, illustrating that visual memory representations follow a different set of computational rules, bypassing normalization, a canonical visual computation.

  15. Stochastic memory: getting memory out of noise

    Science.gov (United States)

    Stotland, Alexander; di Ventra, Massimiliano

    2011-03-01

    Memory circuit elements, namely memristors, memcapacitors and meminductors, can store information without the need of a power source. These systems are generally defined in terms of deterministic equations of motion for the state variables that are responsible for memory. However, in real systems noise sources can never be eliminated completely. One would then expect noise to be detrimental for memory. Here, we show that under specific conditions on the noise intensity memory can actually be enhanced. We illustrate this phenomenon using a physical model of a memristor in which the addition of white noise into the state variable equation improves the memory and helps the operation of the system. We discuss under which conditions this effect can be realized experimentally, discuss its implications on existing memory systems discussed in the literature, and also analyze the effects of colored noise. Work supported in part by NSF.

  16. Investigation of fast initialization of spacecraft bubble memory systems

    Science.gov (United States)

    Looney, K. T.; Nichols, C. D.; Hayes, P. J.

    1984-01-01

    Bubble domain technology offers significant improvement in reliability and functionality for spacecraft onboard memory applications. In considering potential memory systems organizations, minimization of power in high capacity bubble memory systems necessitates the activation of only the desired portions of the memory. In power strobing arbitrary memory segments, a capability of fast turn on is required. Bubble device architectures, which provide redundant loop coding in the bubble devices, limit the initialization speed. Alternate initialization techniques are investigated to overcome this design limitation. An initialization technique using a small amount of external storage is demonstrated.

  17. Detailed Sensory Memory, Sloppy Working Memory

    OpenAIRE

    Sligte, Ilja G.; Vandenbroucke, Annelinde R. E.; Scholte, H. Steven; Lamme, Victor A. F.

    2010-01-01

    Visual short-term memory (VSTM) enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity limits and progressively longer lifetimes. Still, the resolution (or amount of visual detail) of each VSTM stage has remained unexplored and we test this in the present study. We presented people with a...

  18. The Impact of Process Scaling on Scratchpad Memory Energy Savings

    Directory of Open Access Journals (Sweden)

    Bennion Redd

    2014-09-01

    Full Text Available Scratchpad memories have been shown to reduce power consumption, but the different characteristics of nanometer scale processes, such as increased leakage power, motivate an examination of how the benefits of these memories change with process scaling. Process and application characteristics affect the amount of energy saved by a scratchpad memory. Increases in leakage as a percentage of total power particularly impact applications that rarely access memory. This study examines how the benefits of scratchpad memories have changed in newer processes, based on the measured performance of the WIMS (Wireless Integrated MicroSystems microcontroller implemented in 180- and 65-nm processes and upon simulations of this microcontroller implemented in a 32-nm process. The results demonstrate that scratchpad memories will continue to improve the power dissipation of many applications, given the leakage anticipated in the foreseeable future.

  19. Detailed sensory memory, sloppy working memory.

    Science.gov (United States)

    Sligte, Ilja G; Vandenbroucke, Annelinde R E; Scholte, H Steven; Lamme, Victor A F

    2010-01-01

    Visual short-term memory (VSTM) enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity limits and progressively longer lifetimes. Still, the resolution (or amount of visual detail) of each VSTM stage has remained unexplored and we test this in the present study. We presented people with a change detection task that measures the capacity of all three forms of VSTM, and we added an identification display after each change trial that required people to identify the "pre-change" object. Accurate change detection plus pre-change identification requires subjects to have a high-resolution representation of the "pre-change" object, whereas change detection or identification only can be based on the hunch that something has changed, without exactly knowing what was presented before. We observed that people maintained 6.1 objects in iconic memory, 4.6 objects in fragile VSTM, and 2.1 objects in visual working memory. Moreover, when people detected the change, they could also identify the pre-change object on 88% of the iconic memory trials, on 71% of the fragile VSTM trials and merely on 53% of the visual working memory trials. This suggests that people maintain many high-resolution representations in iconic memory and fragile VSTM, but only one high-resolution object representation in visual working memory.

  20. SODR Memory Control Buffer Control ASIC

    Science.gov (United States)

    Hodson, Robert F.

    1994-01-01

    The Spacecraft Optical Disk Recorder (SODR) is a state of the art mass storage system for future NASA missions requiring high transmission rates and a large capacity storage system. This report covers the design and development of an SODR memory buffer control applications specific integrated circuit (ASIC). The memory buffer control ASIC has two primary functions: (1) buffering data to prevent loss of data during disk access times, (2) converting data formats from a high performance parallel interface format to a small computer systems interface format. Ten 144 p in, 50 MHz CMOS ASIC's were designed, fabricated and tested to implement the memory buffer control function.

  1. Principles of Transactional Memory The Theory

    CERN Document Server

    Guerraoui, Rachid

    2010-01-01

    Transactional memory (TM) is an appealing paradigm for concurrent programming on shared memory architectures. With a TM, threads of an application communicate, and synchronize their actions, via in-memory transactions. Each transaction can perform any number of operations on shared data, and then either commit or abort. When the transaction commits, the effects of all its operations become immediately visible to other transactions; when it aborts, however, those effects are entirely discarded. Transactions are atomic: programmers get the illusion that every transaction executes all its operati

  2. [Synergistic application of zinc and vitamin C to support memory, attention and the reduction of the risk of the neurological diseases].

    Science.gov (United States)

    Gromova, O A; Torshin, I Yu; Pronin, A V; Kilchevsky, M A

    Zinc and vitamin C supplementation of the body is important for CNS functioning. Zinc ions are involved in the neurotransmission (signal transmission from acetylcholine, catecholamine, serotonin, prostaglandin receptors) and in ubiquitin-related protein degradation. Zinc deficits are associated with Alzheimer's disease and depression. Zinc supplementation (10-30 mg daily) improves neurologic recovery rate in patients with stroke and brain injury, has a positive impact on memory and reduces hyperactivity in children. Vitamin C, a zinc synergist, maintains antioxidant resources of the brain, synaptic activity and detoxification. Vitamin C in dose 130-500 mg daily should be used to prevent dementia and neurodegenerative pathology.

  3. Increment memory module for spectrometric data recording

    International Nuclear Information System (INIS)

    Zhuchkov, A.A.; Myagkikh, A.I.

    1988-01-01

    Incremental memory unit designed to input differential energy spectra of nuclear radiation is described. ROM application as incremental device has allowed to reduce the number of elements and do simplify information readout from the unit. 12-bit 2048 channels present memory unit organization. The device is connected directly with the bus of microprocessor systems similar to KR 580. Incrementation maximal time constitutes 3 mks. It is possible to use this unit in multichannel counting mode

  4. Exploiting Data Similarity to Reduce Memory Footprints

    Science.gov (United States)

    2011-01-01

    ure 1 illustrates. We expect the budget for an exascale system to be approximately $200M and memory costs will account for about half of that budget [21...Figure 2 shows that monetary considerations will lead to significantly less main memory relative to compute capability in exascale systems even if...J. Davenport, T. Schlagel, F. John- son, and P. Messina. A Decadal DOE Plan for Providing Exascale Applications and Technologies for DOE Mission

  5. Fast, Capacious Disk Memory Device

    Science.gov (United States)

    Muller, Ronald M.

    1990-01-01

    Device for recording digital data on, and playing back data from, memory disks has high recording or playback rate and utilizes available recording area more fully. Two disks, each with own reading/writing head, used to record data at same time. Head on disk A operates on one of tracks numbered from outside in; head on disk B operates on track of same number in sequence from inside out. Underlying concept of device applicable to magnetic or optical disks.

  6. Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

    Science.gov (United States)

    Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

    2011-08-01

    This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

  7. Application of rapid solidification powder metallurgy processing to prepare Cu–Al–Ni high temperature shape memory alloy strips with high strength and high ductility

    Energy Technology Data Exchange (ETDEWEB)

    Vajpai, S.K., E-mail: vajpaisk@gmail.com [Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur 208016, Uttar Pradesh (India); Dube, R.K., E-mail: rkd@iitk.ac.in [Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur 208016, Uttar Pradesh (India); Sangal, S., E-mail: sangals@iitk.ac.in [Department of Materials Science and Engineering, Indian Institute of Technology, Kanpur 208016, Uttar Pradesh (India)

    2013-05-15

    Cu–Al–Ni high temperature shape memory alloy (HTSMA) strips were successfully prepared from rapid solidified water atomized Cu–Al–Ni pre-alloyed powders via hot densification rolling of unsheathed sintered powder preforms. Finished heat-treated Cu–Al–Ni alloy strips had fine-grained structure, average grain size approximately 16 μm, and exhibited a combination of high strength and high ductility. It has been demonstrated that the redistribution of nano-sized alumina particles, present on the surface as well as inside the starting water atomized Cu–Al–Ni pre-alloyed powder particles, due to plastic deformation of starting powder particles during hot densification rolling resulted in the fine grained microstructure in the finished SMA strips. The finished SMA strips were almost fully martensitic in nature, consisting of a mixture of β{sub 1}{sup ′} and γ{sub 1}{sup ′} martensite. The average fracture strength and fracture strain of the finished SMA strips were 810 MPa and 12%, respectively, and the fractured specimens exhibited primarily micro-void coalescence type ductile nature of fracture. Finished Cu–Al–Ni SMA strips exhibited high characteristic transformation temperatures and an almost 100% one-way shape recovery was obtained in the specimens up to 4% applied deformation pre-strain. The retained two-way shape memory recovery increased with increasing applied training pre-strain, achieving a maximum value of 16.25% at 5% applied training pre-strain.

  8. Challenges and Progress in the Development of High-Temperature Shape Memory Alloys Based on NiTiX Compositions for High-Force Actuator Applications

    Science.gov (United States)

    Padula, Santo, II; Bigelow, Glen; Noebe, Ronald; Gaydosh, Darrell; Garg, Anita

    2006-01-01

    Interest in high-temperature shape memory alloys (HTSMA) has been growing in the aerospace, automotive, process control, and energy industries. However, actual materials development has seriously lagged component design, with current commercial NiTi alloys severely limited in their temperature capability. Additions of Pd, Pt, Au, Hf, and Zr at levels greater than 10 at.% have been shown to increase the transformation temperature of NiTi alloys, but with few exceptions, the shape memory behavior (strain recovery) of these NiTiX systems has been determined only under stress free conditions. Given the limited amount of basic mechanical test data and general lack of information regarding the work attributes of these materials, a program to investigate the mechanical behavior of potential HTSMAs, with transformation temperatures between 100 and 500 C, was initiated. This paper summarizes the results of studies, focusing on both the practical temperature limitations for ternary TiNiPd and TiNiPt systems based on the work output of these alloys and the ability of these alloys to undergo repeated thermal cycling under load without significant permanent deformation or "walking". These issues are ultimately controlled by the detwinning stress of the martensite and resistance to dislocation slip of the individual martensite and austenite phases. Finally, general rules that govern the development of useful, high work output, next-generation HTSMA materials, based on the lessons learned in this work, will be provided

  9. Prospective memory, working memory, retrospective memory and self-rated memory performance in persons with intellectual disability

    OpenAIRE

    Levén, Anna; Lyxell, Björn; Andersson, Jan; Danielsson, Henrik; Rönnberg, Jerker

    2008-01-01

    The purpose of the present study was to examine the relationship between prospective memory, working memory, retrospective memory and self-rated memory capacity in adults with and without intellectual disability. Prospective memory was investigated by means of a picture-based task. Working memory was measured as performance on span tasks. Retrospective memory was scored as recall of subject performed tasks. Self-ratings of memory performance were based on the prospective and retrospective mem...

  10. Main Memory DBMS

    NARCIS (Netherlands)

    P.A. Boncz (Peter); L. Liu (Lei); M. Tamer Özsu

    2008-01-01

    htmlabstractA main memory database system is a DBMS that primarily relies on main memory for computer data storage. In contrast, normal database management systems employ hard disk based persisntent storage.

  11. Coping with Memory Loss

    Science.gov (United States)

    ... Consumers Home For Consumers Consumer Updates Coping With Memory Loss Share Tweet Linkedin Pin it More sharing ... be evaluated by a health professional. What Causes Memory Loss? Anything that affects cognition—the process of ...

  12. Memory and Aging

    Science.gov (United States)

    Memory and Aging Losing keys, misplacing a wallet, or forgetting someone’s name are common experiences. But for people nearing or over age 65, such memory lapses can be frightening. They wonder if they ...

  13. Tracing Cultural Memory

    DEFF Research Database (Denmark)

    Wiegand, Frauke Katharina

    by their encounters – to address a question that thirty years of ground - breaking research into memory has not yet sufficiently answered: What can we learn about the dynamics of cultural memory by examining mundane accounts of touristic encounters with sites of memory? From Blaavand Beach in Western Denmark......We encounter, relate to and make use of our past and that of others in multifarious and increasingly mobile ways. Tourism is one of the main paths for encountering sites of memory. This thesis examines tourists’ creative appropriations of sites of memory – the objects and future memories inspired...... of memory. They highlight the role of mundane uses of the past and indicate the need for cross - disciplinary research on the visual and on memory...

  14. Memory deficit in patients with schizophrenia and posttraumatic stress disorder: relational vs item-specific memory

    Directory of Open Access Journals (Sweden)

    Jung W

    2016-05-01

    Full Text Available Wookyoung Jung,1 Seung-Hwan Lee1,2 1Clinical Emotions and Cognition Research Laboratory, Department of Psychiatry, Inje University, Ilsan-Paik Hospital, 2Department of Psychiatry, Inje University, Ilsan-Paik Hospital, Goyang, Korea Abstract: It has been well established that patients with schizophrenia have impairments in cognitive functioning and also that patients who experienced traumatic events suffer from cognitive deficits. Of the cognitive deficits revealed in schizophrenia or posttraumatic stress disorder (PTSD patients, the current article provides a brief review of deficit in episodic memory, which is highly predictive of patients’ quality of life and global functioning. In particular, we have focused on studies that compared relational and item-specific memory performance in schizophrenia and PTSD, because measures of relational and item-specific memory are considered the most promising constructs for immediate tangible development of clinical trial paradigm. The behavioral findings of schizophrenia are based on the tasks developed by the Cognitive Neuroscience Treatment Research to Improve Cognition in Schizophrenia (CNTRICS initiative and the Cognitive Neuroscience Test Reliability and Clinical Applications for Schizophrenia (CNTRACS Consortium. The findings we reviewed consistently showed that schizophrenia and PTSD are closely associated with more severe impairments in relational memory compared to item-specific memory. Candidate brain regions involved in relational memory impairment in schizophrenia and PTSD are also discussed. Keywords: schizophrenia, posttraumatic stress disorder, episodic memory deficit, relational memory, item-specific memory, prefrontal cortex, hippocampus

  15. An electroconvulsive therapy procedure impairs reconsolidation of episodic memories in humans

    NARCIS (Netherlands)

    Kroes, Marijn C. W.; Tendolkar, Indira; van Wingen, Guido A.; van Waarde, Jeroen A.; Strange, Bryan A.; Fernández, Guillén

    2014-01-01

    Despite accumulating evidence for a reconsolidation process in animals, support in humans, especially for episodic memory, is limited. Using a within-subjects manipulation, we found that a single application of electroconvulsive therapy following memory reactivation in patients with unipolar

  16. Chronic MK-801 Application in Adolescence and Early Adulthood: A Spatial Working Memory Deficit in Adult Long-Evans Rats But No Changes in the Hippocampal NMDA Receptor Subunits

    Science.gov (United States)

    Uttl, Libor; Petrasek, Tomas; Sengul, Hilal; Svojanovska, Marketa; Lobellova, Veronika; Vales, Karel; Radostova, Dominika; Tsenov, Grygoriy; Kubova, Hana; Mikulecka, Anna; Svoboda, Jan; Stuchlik, Ales

    2018-01-01

    The role of NMDA receptors in learning, memory and hippocampal function has long been recognized. Post-mortem studies have indicated that the expression or subunit composition of the NMDA glutamate receptor subtype might be related to the impaired cognitive functions found in schizophrenia patients. NMDA receptor antagonists have been used to develop animal models of this disorder. There is accumulating evidence showing that not only the acute but also the chronic application of NMDA receptor antagonists may induce schizophrenia-like alterations in behavior and brain functions. However, limited evidence is available regarding the consequences of NMDA receptor blockage during periods of adolescence and early adulthood. This study tested the hypothesis that a 2-week treatment of male Long-Evans and Wistar rats with dizocilpine (MK-801; 0.5 mg/kg daily) starting at postnatal days (PD) 30 and 60 would cause a long-term cognitive deficit and changes in the levels of NMDA receptor subunits. The working memory version of the Morris water maze (MWM) and active place avoidance with reversal on a rotating arena (Carousel) requiring cognitive coordination and flexibility probed cognitive functions and an elevated-plus maze (EPM) was used to measure anxiety-like behavior. The western blot method was used to determine changes in NMDA receptor subunit levels in the hippocampus. Our results showed no significant changes in behaviors in Wistar rats. Slightly elevated anxiety-like behavior was observed in the EPM in Long-Evans rats with the onset of treatment on PD 30. Furthermore, Long-Evans rats treated from PD 60 displayed impaired working memory in the MWM. There were; however, no significant changes in the levels of NMDA receptor subunits because of MK-801 administration. These findings suggest that a 2-week treatment starting on PD 60 in Long-Evans rats leads to long-term changes in working memory, but this deficit is not paralleled by changes in NMDA receptor subunits. These

  17. Emotional Memory Persists Longer than Event Memory

    Science.gov (United States)

    Kuriyama, Kenichi; Soshi, Takahiro; Fujii, Takeshi; Kim, Yoshiharu

    2010-01-01

    The interaction between amygdala-driven and hippocampus-driven activities is expected to explain why emotion enhances episodic memory recognition. However, overwhelming behavioral evidence regarding the emotion-induced enhancement of immediate and delayed episodic memory recognition has not been obtained in humans. We found that the recognition…

  18. Music, memory and emotion

    Science.gov (United States)

    Jäncke, Lutz

    2008-01-01

    Because emotions enhance memory processes and music evokes strong emotions, music could be involved in forming memories, either about pieces of music or about episodes and information associated with particular music. A recent study in BMC Neuroscience has given new insights into the role of emotion in musical memory. PMID:18710596

  19. Attending to auditory memory.

    Science.gov (United States)

    Zimmermann, Jacqueline F; Moscovitch, Morris; Alain, Claude

    2016-06-01

    Attention to memory describes the process of attending to memory traces when the object is no longer present. It has been studied primarily for representations of visual stimuli with only few studies examining attention to sound object representations in short-term memory. Here, we review the interplay of attention and auditory memory with an emphasis on 1) attending to auditory memory in the absence of related external stimuli (i.e., reflective attention) and 2) effects of existing memory on guiding attention. Attention to auditory memory is discussed in the context of change deafness, and we argue that failures to detect changes in our auditory environments are most likely the result of a faulty comparison system of incoming and stored information. Also, objects are the primary building blocks of auditory attention, but attention can also be directed to individual features (e.g., pitch). We review short-term and long-term memory guided modulation of attention based on characteristic features, location, and/or semantic properties of auditory objects, and propose that auditory attention to memory pathways emerge after sensory memory. A neural model for auditory attention to memory is developed, which comprises two separate pathways in the parietal cortex, one involved in attention to higher-order features and the other involved in attention to sensory information. This article is part of a Special Issue entitled SI: Auditory working memory. Copyright © 2015 Elsevier B.V. All rights reserved.

  20. Saving Malta's music memory

    OpenAIRE

    Sant, Toni

    2013-01-01

    Maltese music is being lost. Along with it Malta loses its culture, way of life, and memories. Dr Toni Sant is trying to change this trend through the Malta Music Memory Project (M3P) http://www.um.edu.mt/think/saving-maltas-music-memory-2/

  1. Associative Memory Acceptors.

    Science.gov (United States)

    Card, Roger

    The properties of an associative memory are examined in this paper from the viewpoint of automata theory. A device called an associative memory acceptor is studied under real-time operation. The family "L" of languages accepted by real-time associative memory acceptors is shown to properly contain the family of languages accepted by one-tape,…

  2. Generation and Context Memory

    Science.gov (United States)

    Mulligan, Neil W.; Lozito, Jeffrey P.; Rosner, Zachary A.

    2006-01-01

    Generation enhances memory for occurrence but may not enhance other aspects of memory. The present study further delineates the negative generation effect in context memory reported in N. W. Mulligan (2004). First, the negative generation effect occurred for perceptual attributes of the target item (its color and font) but not for extratarget…

  3. Music, memory and emotion.

    Science.gov (United States)

    Jäncke, Lutz

    2008-08-08

    Because emotions enhance memory processes and music evokes strong emotions, music could be involved in forming memories, either about pieces of music or about episodes and information associated with particular music. A recent study in BMC Neuroscience has given new insights into the role of emotion in musical memory.

  4. Scientific developments of liquid crystal-based optical memory: a review

    Science.gov (United States)

    Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

    2017-01-01

    The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

  5. Distributed-memory matrix computations

    DEFF Research Database (Denmark)

    Balle, Susanne Mølleskov

    1995-01-01

    The main goal of this project is to investigate, develop, and implement algorithms for numerical linear algebra on parallel computers in order to acquire expertise in methods for parallel computations. An important motivation for analyzaing and investigating the potential for parallelism in these......The main goal of this project is to investigate, develop, and implement algorithms for numerical linear algebra on parallel computers in order to acquire expertise in methods for parallel computations. An important motivation for analyzaing and investigating the potential for parallelism...... in these algorithms is that many scientific applications rely heavily on the performance of the involved dense linear algebra building blocks. Even though we consider the distributed-memory as well as the shared-memory programming paradigm, the major part of the thesis is dedicated to distributed-memory architectures....... We emphasize distributed-memory massively parallel computers - such as the Connection Machines model CM-200 and model CM-5/CM-5E - available to us at UNI-C and at Thinking Machines Corporation. The CM-200 was at the time this project started one of the few existing massively parallel computers...

  6. Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

    Science.gov (United States)

    Shin, Sunhae; Rok Kim, Kyung

    2015-06-01

    In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

  7. Application of in-situ nano-scanning calorimetry and X-ray diffraction to characterize Ni–Ti–Hf high-temperature shape memory alloys

    Energy Technology Data Exchange (ETDEWEB)

    McCluskey, Patrick J., E-mail: mccluske@ge.com [GE Global Research, One Research Circle, Niskayuna, NY 12309 (United States); Xiao, Kechao [School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, MA 02138 (United States); Gregoire, John M. [Joint Center for Artificial Photosynthesis, California Institute of Technology, 1200 E. California Blvd., Pasadena, CA 91125 (United States); Dale, Darren [Cornell High Energy Synchrotron Source, Ithaca, NY 14853 (United States); Vlassak, Joost J. [School of Engineering and Applied Sciences, Harvard University, 29 Oxford Street, Cambridge, MA 02138 (United States)

    2015-03-10

    Combinatorial nanocalorimetry and synchrotron X-ray diffraction were combined to study the martensite–austenite (M–A) phase transformation behavior of Ni–Ti–Hf shape memory alloys. A thin-film library of Ni–Ti–Hf samples with a range of compositions was deposited on a parallel nano-scanning calorimeter device using sputter deposition. Crystallization of each amorphous as-deposited sample by local heating at approximately 10{sup 4} K/s produced a nanoscale grain structure of austenite and martensite. Individual samples were then cycled through the M–A transformation, while the transformation enthalpy was measured by nanocalorimetry and the low- and high-temperature phase compositions were determined by X-ray diffraction. The techniques enable correlation of the observed behavior during thermal cycling with the thermodynamic and structural properties of the samples.

  8. Probing electron density across Ar{sup +} irradiation-induced self-organized TiO{sub 2−x} nanochannels for memory application

    Energy Technology Data Exchange (ETDEWEB)

    Barman, A.; Saini, C. P.; Ghosh, S. K.; Dhar, S.; Kanjilal, A., E-mail: aloke.kanjilal@snu.edu.in [Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201314 (India); Sarkar, P. K.; Roy, A. [Department of Physics, National Institute of Technology, Silchar, Assam 788010 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

    2016-06-13

    The variation of electron density in TiO{sub 2−x} nanochannels, exhibiting resistive switching phenomenon, produced by Ar{sup +} ion-irradiation at the threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} is demonstrated by X-ray reflectivity (XRR). The transmission electron microscopy reveals the formation of nanochannels, while the energy dispersive X-ray spectroscopy confirms Ti enrichment near the surface due to ion-irradiation, in consistent with the increase in electron density by XRR measurements. Such a variation in Ti concentration indicates the evolution of oxygen vacancies (OVs) along the TiO{sub 2−x} nanochannels, and thus paves the way to explain the operation and performance of the Pt/TiO{sub 2−x}/Pt-based memory devices via OV migration.

  9. EPS Mid-Career Award 2011. Are there multiple memory systems? Tests of models of implicit and explicit memory.

    Science.gov (United States)

    Shanks, David R; Berry, Christopher J

    2012-01-01

    This article reviews recent work aimed at developing a new framework, based on signal detection theory, for understanding the relationship between explicit (e.g., recognition) and implicit (e.g., priming) memory. Within this framework, different assumptions about sources of memorial evidence can be framed. Application to experimental results provides robust evidence for a single-system model in preference to multiple-systems models. This evidence comes from several sources including studies of the effects of amnesia and ageing on explicit and implicit memory. The framework allows a range of concepts in current memory research, such as familiarity, recollection, fluency, and source memory, to be linked to implicit memory. More generally, this work emphasizes the value of modern computational modelling techniques in the study of learning and memory.

  10. ECT and memory loss.

    Science.gov (United States)

    Squire, L R

    1977-09-01

    The author reviews several studies that clarify the nature of the memory loss associated with ECT. Bilateral ECT produced greater anterograde memory loss than right unilateral ECT and more extensive retrograde amnesia than unilateral ECT. Reactivating memories just before ECT did not produce amnesia. Capacity for new learning recovered substantially by several months after ECT, but memory complaints were common in individuals who had received bilateral ECT. Other things being equal, right unilateral ECT seems preferable to bilateral ECT because the risks to memory associated with unilateral ECT are smaller.

  11. Determination of memory performance

    International Nuclear Information System (INIS)

    Gopych, P.M.

    1999-01-01

    Within the scope of testing statistical hypotheses theory a model definition and a computer method for model calculation of widely used in neuropsychology human memory performance (free recall, cued recall, and recognition probabilities), a model definition and a computer method for model calculation of intensities of cues used in experiments for testing human memory quality are proposed. Models for active and passive traces of memory and their relations are found. It was shown that autoassociative memory unit in the form of short two-layer artificial neural network with (or without) damages can be used for model description of memory performance in subjects with (or without) local brain lesions

  12. Quantum random access memory

    OpenAIRE

    Giovannetti, Vittorio; Lloyd, Seth; Maccone, Lorenzo

    2007-01-01

    A random access memory (RAM) uses n bits to randomly address N=2^n distinct memory cells. A quantum random access memory (qRAM) uses n qubits to address any quantum superposition of N memory cells. We present an architecture that exponentially reduces the requirements for a memory call: O(log N) switches need be thrown instead of the N used in conventional (classical or quantum) RAM designs. This yields a more robust qRAM algorithm, as it in general requires entanglement among exponentially l...

  13. DYNAMIC MEMORY ALLOCATION – CLR PROFILER

    Directory of Open Access Journals (Sweden)

    Adrian LUPASC

    2014-06-01

    Full Text Available At the present time, information systems are an important component in the development of many activities, due to their ability of managing a large amount of data and performing complex operations in a very short time. In this regard, very important is the correct management of all available resources, especially memory management. Haven’t happened to test an application, but it runs out of memory? This paper is trying to explain some of the situations causing those problems and also is trying to find some solutions for fixing them. Concluding, the purpose of this paper is to emphasize on one hand the importance of using a memory profiler in the development of your applications and on the other hand, the advantages brought by CLR Profiler on your .NET applications.

  14. Memory dynamics under stress.

    Science.gov (United States)

    Quaedflieg, Conny W E M; Schwabe, Lars

    2018-03-01

    Stressful events have a major impact on memory. They modulate memory formation in a time-dependent manner, closely linked to the temporal profile of action of major stress mediators, in particular catecholamines and glucocorticoids. Shortly after stressor onset, rapidly acting catecholamines and fast, non-genomic glucocorticoid actions direct cognitive resources to the processing and consolidation of the ongoing threat. In parallel, control of memory is biased towards rather rigid systems, promoting habitual forms of memory allowing efficient processing under stress, at the expense of "cognitive" systems supporting memory flexibility and specificity. In this review, we discuss the implications of this shift in the balance of multiple memory systems for the dynamics of the memory trace. Specifically, stress appears to hinder the incorporation of contextual details into the memory trace, to impede the integration of new information into existing knowledge structures, to impair the flexible generalisation across past experiences, and to hamper the modification of memories in light of new information. Delayed, genomic glucocorticoid actions might reverse the control of memory, thus restoring homeostasis and "cognitive" control of memory again.

  15. Detailed sensory memory, sloppy working memory

    Directory of Open Access Journals (Sweden)

    Ilja G Sligte

    2010-10-01

    Full Text Available Visual short-term memory (VSTM enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity limits and progressively longer lifetimes. Still, the resolution (or amount of visual detail of each VSTM stage has remained unexplored and we test this in the present study. We presented people with a change detection task that measures the capacity of all three forms of VSTM, and we added an identification display after each change trial that required people to identify the pre-change object. Accurate change detection plus pre-change identification requires subjects to have a high-resolution representation of the pre-change object, whereas change detection or identification only can be based on the hunch that something has changed, without exactly knowing what was presented before. We observed that people maintained 6.1 objects in iconic memory, 4.6 objects in fragile VSTM and 2.1 objects in visual working memory. Moreover, when people detected the change, they could also identify the pre-change object on 88 percent of the iconic memory trials, on 71 percent of the fragile VSTM trials and merely on 53 percent of the visual working memory trials. This suggests that people maintain many high-resolution representations in iconic memory and fragile VSTM, but only one high-resolution object representation in visual working memory.

  16. NAND flash memory technologies

    CERN Document Server

    Aritome, Seiichi

    2016-01-01

    This book discusses basic and advanced NAND flash memory technologies, including the principle of NAND flash, memory cell technologies, multi-bits cell technologies, scaling challenges of memory cell, reliability, and 3-dimensional cell as the future technology. Chapter 1 describes the background and early history of NAND flash. The basic device structures and operations are described in Chapter 2. Next, the author discusses the memory cell technologies focused on scaling in Chapter 3, and introduces the advanced operations for multi-level cells in Chapter 4. The physical limitations for scaling are examined in Chapter 5, and Chapter 6 describes the reliability of NAND flash memory. Chapter 7 examines 3-dimensional (3D) NAND flash memory cells and discusses the pros and cons in structure, process, operations, scalability, and performance. In Chapter 8, challenges of 3D NAND flash memory are dis ussed. Finally, in Chapter 9, the author summarizes and describes the prospect of technologies and market for the fu...

  17. Synthetic vision and memory for autonomous virtual humans

    OpenAIRE

    PETERS, CHRISTOPHER; O'SULLIVAN, CAROL ANN

    2002-01-01

    PUBLISHED A memory model based on ?stage theory?, an influential concept of memory from the field of cognitive psychology, is presented for application to autonomous virtual humans. The virtual human senses external stimuli through a synthetic vision system. The vision system incorporates multiple modes of vision in order to accommodate a perceptual attention approach. The memory model is used to store perceived and attended object information at different stages in a filtering...

  18. Memory development in preschool children with disabilities in the game

    OpenAIRE

    Viktoriya Shypikova

    2013-01-01

    The scientific article "Development of memory in preschool children with disabilities in the game" reveals the relevance of the application of the game as the leading activity during the preschool years to optimize the development of the mental process of memory in children with disabilities. Work on the development of children's memory in the form of a game as the most effective form, aimed at attracting the attention of professionals working with preschool children with disabilities, a...

  19. Stochastic memory: Memory enhancement due to noise

    Science.gov (United States)

    Stotland, Alexander; di Ventra, Massimiliano

    2012-01-01

    There are certain classes of resistors, capacitors, and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here we show that the hysteresis of such memory elements can also be induced by white noise of appropriate intensity even at very low frequencies of the external driving field. We illustrate this phenomenon using a physical model of memory resistor realized by TiO2 thin films sandwiched between metallic electrodes and discuss under which conditions this effect can be observed experimentally. We also discuss its implications on existing memory systems described in the literature and the role of colored noise.

  20. Memory operation mechanism of fullerene-containing polymer memory

    Energy Technology Data Exchange (ETDEWEB)

    Nakajima, Anri, E-mail: anakajima@hiroshima-u.ac.jp; Fujii, Daiki [Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527 (Japan)

    2015-03-09

    The memory operation mechanism in fullerene-containing nanocomposite gate insulators was investigated while varying the kind of fullerene in a polymer gate insulator. It was cleared what kind of traps and which positions in the nanocomposite the injected electrons or holes are stored in. The reason for the difference in the easiness of programming was clarified taking the role of the charging energy of an injected electron into account. The dependence of the carrier dynamics on the kind of fullerene molecule was investigated. A nonuniform distribution of injected carriers occurred after application of a large magnitude programming voltage due to the width distribution of the polystyrene barrier between adjacent fullerene molecules. Through the investigations, we demonstrated a nanocomposite gate with fullerene molecules having excellent retention characteristics and a programming capability. This will lead to the realization of practical organic memories with fullerene-containing polymer nanocomposites.

  1. Short-term memory in networks of dissociated cortical neurons.

    Science.gov (United States)

    Dranias, Mark R; Ju, Han; Rajaram, Ezhilarasan; VanDongen, Antonius M J

    2013-01-30

    Short-term memory refers to the ability to store small amounts of stimulus-specific information for a short period of time. It is supported by both fading and hidden memory processes. Fading memory relies on recurrent activity patterns in a neuronal network, whereas hidden memory is encoded using synaptic mechanisms, such as facilitation, which persist even when neurons fall silent. We have used a novel computational and optogenetic approach to investigate whether these same memory processes hypothesized to support pattern recognition and short-term memory in vivo, exist in vitro. Electrophysiological activity was recorded from primary cultures of dissociated rat cortical neurons plated on multielectrode arrays. Cultures were transfected with ChannelRhodopsin-2 and optically stimulated using random dot stimuli. The pattern of neuronal activity resulting from this stimulation was analyzed using classification algorithms that enabled the identification of stimulus-specific memories. Fading memories for different stimuli, encoded in ongoing neural activity, persisted and could be distinguished from each other for as long as 1 s after stimulation was terminated. Hidden memories were detected by altered responses of neurons to additional stimulation, and this effect persisted longer than 1 s. Interestingly, network bursts seem to eliminate hidden memories. These results are similar to those that have been reported from similar experiments in vivo and demonstrate that mechanisms of information processing and short-term memory can be studied using cultured neuronal networks, thereby setting the stage for therapeutic applications using this platform.

  2. A bidirectional shape memory alloy folding actuator

    International Nuclear Information System (INIS)

    Paik, Jamie K; Wood, Robert J

    2012-01-01

    This paper presents a low-profile bidirectional folding actuator based on annealed shape memory alloy sheets applicable for meso- and microscale systems. Despite the advantages of shape memory alloys—high strain, silent operation, and mechanical simplicity—their application is often limited to unidirectional operation. We present a bidirectional folding actuator that produces two opposing 180° motions. A laser-patterned nickel alloy (Inconel 600) heater localizes actuation to the folding sections. The actuator has a thin ( < 1 mm) profile, making it appropriate for use in robotic origami. Various design parameters and fabrication variants are described and experimentally explored in the actuator prototype. (paper)

  3. The contributions of handedness and working memory to episodic memory.

    Science.gov (United States)

    Sahu, Aparna; Christman, Stephen D; Propper, Ruth E

    2016-11-01

    Past studies have independently shown associations of working memory and degree of handedness with episodic memory retrieval. The current study takes a step ahead by examining whether handedness and working memory independently predict episodic memory. In agreement with past studies, there was an inconsistent-handed advantage for episodic memory; however, this advantage was absent for working memory tasks. Furthermore, regression analyses showed handedness, and complex working memory predicted episodic memory performance at different times. Results are discussed in light of theories of episodic memory and hemispheric interaction.

  4. Memory for speech and speech for memory.

    Science.gov (United States)

    Locke, J L; Kutz, K J

    1975-03-01

    Thirty kindergarteners, 15 who substituted /w/ for /r/ and 15 with correct articulation, received two perception tests and a memory test that included /w/ and /r/ in minimally contrastive syllables. Although both groups had nearly perfect perception of the experimenter's productions of /w/ and /r/, misarticulating subjects perceived their own tape-recorded w/r productions as /w/. In the memory task these same misarticulating subjects committed significantly more /w/-/r/ confusions in unspoken recall. The discussion considers why people subvocally rehearse; a developmental period in which children do not rehearse; ways subvocalization may aid recall, including motor and acoustic encoding; an echoic store that provides additional recall support if subjects rehearse vocally, and perception of self- and other- produced phonemes by misarticulating children-including its relevance to a motor theory of perception. Evidence is presented that speech for memory can be sufficiently impaired to cause memory disorder. Conceptions that restrict speech disorder to an impairment of communication are challenged.

  5. Transparent Memory For Harsh Electronics

    KAUST Repository

    Ho, C. H.

    2017-03-14

    As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.

  6. Radioactive resistance of memory elements

    International Nuclear Information System (INIS)

    Loncar, B.; Stankovic, S.; Novakovic, D.; Osmokrovic, P.

    1998-01-01

    In this paper, the results of semiconductor memories radioactive resistance examination (EPROM and EEPROM) are presented. Performance of semiconductor memories is most important, when working under high risk condition where there is an influence of radiation. This research is particularly interesting for specific applications in military industry and space technology. Therefore, the analysis of the degradation mechanism of these components as well as the possibilities to increase their radiation resistivity have been considered by many authors. The aim of this work is the examination of the reliability of EPROM and EEPROM characteristics under radiation. Total dose results are presented for the JL 27C512D EPROM and ST 24C02 EEPROM. There is evidence that EPROM are more sensitive to y radiation than EEPROM. The results obtained are analyzed theoretically via the interaction of gamma radiation with oxide layer. (authors)

  7. Multiple memory systems, multiple time points: how science can inform treatment to control the expression of unwanted emotional memories.

    Science.gov (United States)

    Visser, Renée M; Lau-Zhu, Alex; Henson, Richard N; Holmes, Emily A

    2018-03-19

    Memories that have strong emotions associated with them are particularly resilient to forgetting. This is not necessarily problematic, however some aspects of memory can be. In particular, the involuntary expression of those memories, e.g. intrusive memories after trauma, are core to certain psychological disorders. Since the beginning of this century, research using animal models shows that it is possible to change the underlying memory, for example by interfering with its consolidation or reconsolidation. While the idea of targeting maladaptive memories is promising for the treatment of stress and anxiety disorders, a direct application of the procedures used in non-human animals to humans in clinical settings is not straightforward. In translational research, more attention needs to be paid to specifying what aspect of memory (i) can be modified and (ii) should be modified. This requires a clear conceptualization of what aspect of memory is being targeted, and how different memory expressions may map onto clinical symptoms. Furthermore, memory processes are dynamic, so procedural details concerning timing are crucial when implementing a treatment and when assessing its effectiveness. To target emotional memory in its full complexity, including its malleability, science cannot rely on a single method, species or paradigm. Rather, a constructive dialogue is needed between multiple levels of research, all the way 'from mice to mental health'.This article is part of a discussion meeting issue 'Of mice and mental health: facilitating dialogue between basic and clinical neuroscientists'. © 2018 The Authors.

  8. Psychophysiology of prospective memory.

    Science.gov (United States)

    Rothen, Nicolas; Meier, Beat

    2014-01-01

    Prospective memory involves the self-initiated retrieval of an intention upon an appropriate retrieval cue. Cue identification can be considered as an orienting reaction and may thus trigger a psychophysiological response. Here we present two experiments in which skin conductance responses (SCRs) elicited by prospective memory cues were compared to SCRs elicited by aversive stimuli to test whether a single prospective memory cue triggers a similar SCR as an aversive stimulus. In Experiment 2 we also assessed whether cue specificity had a differential influence on prospective memory performance and on SCRs. We found that detecting a single prospective memory cue is as likely to elicit a SCR as an aversive stimulus. Missed prospective memory cues also elicited SCRs. On a behavioural level, specific intentions led to better prospective memory performance. However, on a psychophysiological level specificity had no influence. More generally, the results indicate reliable SCRs for prospective memory cues and point to psychophysiological measures as valuable approach, which offers a new way to study one-off prospective memory tasks. Moreover, the findings are consistent with a theory that posits multiple prospective memory retrieval stages.

  9. Paging memory from random access memory to backing storage in a parallel computer

    Science.gov (United States)

    Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

    2013-05-21

    Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

  10. Clinical Application of a New Indwelling Catheter with a Side-Hole and Spirally Arranged Shape-Memory Alloy for Hepatic Arterial Infusion Chemotherapy

    International Nuclear Information System (INIS)

    Yagihashi, Kunihiro; Takizawa, Kenji; Ogawa, Yukihisa; Okamoto, Kyoko; Yoshimatsu, Misako; Fujikawa, Atsuko; Shimamoto, Hiroshi; Nakajima, Yasuo

    2010-01-01

    A new indwelling catheter, G-spiral (GSP), was developed for hepatic arterial infusion chemotherapy (HAIC) by way of an implanted catheter-port system (CPS). Here we evaluated its physical properties and the outcomes of its clinical use. The GSP vessel-fixing power and its ability to follow a guidewire were determined with a vascular in vitro model, and Student t test was used to determine statistical significance (P < 0.05). A retrospective analysis was performed to evaluate the technical success rate and to identify the clinical complications associated with radiologic CPS implantation with GSP in 65 patients with unresectable hepatic tumors. The mean vessel-fixing power of the GSP (14.4 g) significantly differed from that of a GSP with a cut shape-memory alloy (3.3 g). The mean resistance to following the guidewire displayed by the GSP (88.5 g) was significantly less than that for a 5F W-spiral (106.3 g) or 4F Cobra-type angiographic catheter (117.8 g). The CPS was placed successfully in 64 of 65 cases (98.5%). Hepatic artery occlusion was observed in one case. Occlusion, cracking, and infection of CPS were observed in one, two, and one case, respectively. The GSP is a highly useful indwelling catheter that can be used for HAIC.

  11. PIIID-formed (Ti, O)/Ti, (Ti, N)/Ti and (Ti, O, N)/Ti coatings on NiTi shape memory alloy for medical applications

    Energy Technology Data Exchange (ETDEWEB)

    Sun Tao, E-mail: taosun@hotmail.com.hk [Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road (Hong Kong); Institute of Microelectronics, Agency for Science, Technology and Research (A-STAR) (Singapore); Wang Langping, E-mail: aplpwang@hit.edu.cn [State Key Lab of Advanced Welding and Joining, Harbin Institute of Technology (China); Wang Min; Tong Howang [Department of Mechanical Engineering, University of Hong Kong, Pokfulam Road (Hong Kong); Lu, William W. [Department of Orthopedics and Traumatology, University of Hong Kong, Sassoon Road (Hong Kong)

    2012-08-01

    (Ti, O)/Ti, (Ti, N)/Ti and (Ti, O, N)/Ti composite coatings were fabricated on NiTi shape memory alloy via plasma immersion ion implantation and deposition (PIIID). Surface morphology of samples was investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). Cross-sectional morphology indicated that the PIIID-formed coatings were dense and uniform. X-ray diffraction (XRD) was used to characterize the phase composition of samples. X-ray photoelectron spectroscopy (XPS) results showed that the surface of coated NiTi SMA samples was Ni-free. Nanoindentation measurements and pin-on-disc tests were carried out to evaluate mechanical properties and wear resistance of coated NiTi SMA, respectively. For the in vitro biological assessment of the composite coatings in terms of cell morphology and cell viability, osteoblast-like SaOS-2 cells and breast cancer MCF-7 cells were cultured on NiTi SMA samples, respectively. SaOS-2 cells attached and spread better on coated NiTi SMA. Viability of MCF-7 cells showed that the PIIID-formed composite coatings were noncytotoxic and coated samples were more biocompatible than uncoated samples. - Highlights: Black-Right-Pointing-Pointer PIIID-formed coatings were fabricated on NiTi SMA to improve its biocompatibility. Black-Right-Pointing-Pointer Microstructure, mechanical properties and biocompatibility of coatings were investigated. Black-Right-Pointing-Pointer All PIIID-formed composite coatings were noncytotoxic and cytocompatible.

  12. Recollection Rejection: How Children Edit Their False Memories.

    Science.gov (United States)

    Brainerd, C. J.; Reyna, V. F.

    2002-01-01

    Presents new measure of children's use of an editing operation that suppresses false memories by accessing verbatim traces of true events. Application of the methodology showed that false-memory editing increased dramatically between early and middle childhood. Measure reacted appropriately to experimental manipulations. Developmental reductions…

  13. Database architecture optimized for the new bottleneck: Memory access

    NARCIS (Netherlands)

    P.A. Boncz (Peter); S. Manegold (Stefan); M.L. Kersten (Martin)

    1999-01-01

    textabstractIn the past decade, advances in speed of commodity CPUs have far out-paced advances in memory latency. Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. In this article, we use a simple scan test to show the

  14. Optimizing Database Architecture for the New Bottleneck: Memory Access

    NARCIS (Netherlands)

    S. Manegold (Stefan); P.A. Boncz (Peter); M.L. Kersten (Martin)

    2000-01-01

    textabstractIn the past decade, advances in speed of commodity CPUs have far out-paced advances in memory latency. Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. In this article, we use a simple scan test to show the

  15. Estimating and Forecasting Generalized Fractional Long Memory Stochastic Volatility Models

    NARCIS (Netherlands)

    S. Peiris (Shelton); M. Asai (Manabu); M.J. McAleer (Michael)

    2016-01-01

    textabstractIn recent years fractionally differenced processes have received a great deal of attention due to its flexibility in financial applications with long memory. This paper considers a class of models generated by Gegenbauer polynomials, incorporating the long memory in stochastic volatility

  16. Breaking the memory wall in MonetDB

    NARCIS (Netherlands)

    P.A. Boncz (Peter); M.L. Kersten (Martin); S. Manegold (Stefan)

    2008-01-01

    textabstractIn the past decades, advances in speed of commodity CPUs have far outpaced advances in RAM latency. Main-memory access has therefore become a performance bottleneck for many computer applications; a phenomenon that is widely known as the "memory wall." In this paper, we report how

  17. Verification of Memory Performance Contracts with KeY

    OpenAIRE

    Engel, Christian

    2007-01-01

    Determining the worst case memory consumption is an important issue for real-time Java applications. This work describes a methodology for formally verifying worst case memory performance constraints and proposes extensions to Java Modeling Language (JML) facilitating better verifiability of JML performance specifications.

  18. Breaking the memory wall in MonetDB

    NARCIS (Netherlands)

    Boncz, P.A.; Kersten, M.L.; Manegold, S.

    2008-01-01

    In the past decades, advances in speed of commodity CPUs have far outpaced advances in RAM latency. Main-memory access has therefore become a performance bottleneck for many computer applications; a phenomenon that is widely known as the "memory wall." In this paper, we report how research around

  19. Long-Term Memory: A State-Space Approach

    Science.gov (United States)

    Kiss, George R.

    1972-01-01

    Some salient concepts derived from the information sciences and currently used in theories of human memory are critically reviewed. The application of automata theory is proposed as a new approach in this field. The approach is illustrated by applying it to verbal memory. (Author)

  20. Portable memory consistency for software managed distributed memory in many-core SoC

    NARCIS (Netherlands)

    Rutgers, J.H.; Bekooij, Marco Jan Gerrit; Smit, Gerardus Johannes Maria

    2013-01-01

    Porting software to different platforms can require modifications of the application. One of the issues is that the targeted hardware supports another memory consistency model. As a consequence, the completion order of reads and writes in a multi-threaded application can change, which may result in

  1. Intentionally fabricated autobiographical memories.

    Science.gov (United States)

    Justice, Lucy V; Morrison, Catriona M; Conway, Martin A

    2018-02-01

    Participants generated both autobiographical memories (AMs) that they believed to be true and intentionally fabricated autobiographical memories (IFAMs). Memories were constructed while a concurrent memory load (random 8-digit sequence) was held in mind or while there was no concurrent load. Amount and accuracy of recall of the concurrent memory load was reliably poorer following generation of IFAMs than following generation of AMs. There was no reliable effect of load on memory generation times; however, IFAMs always took longer to construct than AMs. Finally, replicating previous findings, fewer IFAMs had a field perspective than AMs, IFAMs were less vivid than AMs, and IFAMs contained more motion words (indicative of increased cognitive load). Taken together, these findings show a pattern of systematic differences that mark out IFAMs, and they also show that IFAMs can be identified indirectly by lowered performance on concurrent tasks that increase cognitive load.

  2. Shape memory polymers

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Thomas S.; Bearinger, Jane P.

    2017-08-29

    New shape memory polymer compositions, methods for synthesizing new shape memory polymers, and apparatus comprising an actuator and a shape memory polymer wherein the shape memory polymer comprises at least a portion of the actuator. A shape memory polymer comprising a polymer composition which physically forms a network structure wherein the polymer composition has shape-memory behavior and can be formed into a permanent primary shape, re-formed into a stable secondary shape, and controllably actuated to recover the permanent primary shape. Polymers have optimal aliphatic network structures due to minimization of dangling chains by using monomers that are symmetrical and that have matching amine and hydroxl groups providing polymers and polymer foams with clarity, tight (narrow temperature range) single transitions, and high shape recovery and recovery force that are especially useful for implanting in the human body.

  3. Time for memory

    DEFF Research Database (Denmark)

    Murakami, Kyoko

    2012-01-01

    This article is a continuous dialogue on memory triggered by Brockmeier’s (2010) article. I drift away from the conventionalization of the archive as a spatial metaphor for memory in order to consider the greater possibility of “time” for conceptualizing memory. The concept of time is central...... in terms of autobiographical memory. The second category of time is discussed, drawing on Augustine and Bergson amongst others. Bergson’s notion of duration has been considered as a promising concept for a better understanding of autobiographical memory. Psychological phenomena such as autobiographical...... memory should embrace not only spatial dimension, but also a temporal dimension, in which a constant flow of irreversible time, where multiplicity, momentarily, dynamic stability and becoming and emergence of novelty can be observed....

  4. Shape memory polymers

    Science.gov (United States)

    Wilson, Thomas S.; Bearinger, Jane P.

    2015-06-09

    New shape memory polymer compositions, methods for synthesizing new shape memory polymers, and apparatus comprising an actuator and a shape memory polymer wherein the shape memory polymer comprises at least a portion of the actuator. A shape memory polymer comprising a polymer composition which physically forms a network structure wherein the polymer composition has shape-memory behavior and can be formed into a permanent primary shape, re-formed into a stable secondary shape, and controllably actuated to recover the permanent primary shape. Polymers have optimal aliphatic network structures due to minimization of dangling chains by using monomers that are symmetrical and that have matching amine and hydroxyl groups providing polymers and polymer foams with clarity, tight (narrow temperature range) single transitions, and high shape recovery and recovery force that are especially useful for implanting in the human body.

  5. Zone memories and pseudorandom addressing

    International Nuclear Information System (INIS)

    Marino, D.; Mirizzi, N.; Stella, R.; Visaggio, G.

    1975-01-01

    A quantitative comparison between zone memories, pseudorandom addressed memories and an alternative special purpose memory (spread zone memory) in which the distance between any two transformed descriptors, at first adjacent, is independent of the descriptors pair and results the maximum one is presented. This memory has not been particularly considered at present in spite of its efficiency and its simple implementation

  6. Music, memory and emotion

    OpenAIRE

    J?ncke, Lutz

    2008-01-01

    Because emotions enhance memory processes and music evokes strong emotions, music could be involved in forming memories, either about pieces of music or about episodes and information associated with particular music. A recent study in BMC Neuroscience has given new insights into the role of emotion in musical memory. Music has a prominent role in the everyday life of many people. Whether it is for recreation, distraction or mood enhancement, a lot of people listen to music from early in t...

  7. Making Memories Matter

    OpenAIRE

    Gold, Paul E.; Korol, Donna L.

    2012-01-01

    This article reviews some of the neuroendocrine bases by which emotional events regulate brain mechanisms of learning and memory. In laboratory rodents, there is extensive evidence that epinephrine influences memory processing through an inverted-U relationship, at which moderate levels enhance and high levels impair memory. These effects are, in large part, mediated by increases in blood glucose levels subsequent to epinephrine release, which then provide support for the brain processes en...

  8. Emotion and Autobiographical Memory

    Directory of Open Access Journals (Sweden)

    Nuray Sarp

    2011-09-01

    Full Text Available Self and mind are constituted with the cumulative effects of significant life events. This description is regarded as a given explicitly or implicitly in vari-ous theories of personality. Such an acknowledgment inevitably brings together these theories on two basic concepts. The first one is the emotions that give meaning to experiences and the second one is the memory which is related to the storage of these experiences. The part of the memory which is responsible for the storage and retrieval of life events is the autobiographical memory. Besides the development of personality, emotions and autobiographical memory are important in the development of and maintenance of psychopathology. Therefore, these two concepts have both longitudinal and cross-sectional functions in understanding human beings. In case of psychopathology, understanding emotions and autobiographical memory developmentally, aids in understanding the internal susceptibility factors. In addition, understanding how these two structures work and influence each other in an acute event would help to understand the etiological mechanisms of mental disorders. In the literature, theories that include both of these structures and that have clinical implications, are inconclusive. Theories on memory generally focus on cognitive and semantic structures while neglecting emotions, whereas theories on emotions generally neglect memory and its organization. There are only a few theories that cover both of these two concepts. In the present article, these theories that include both emotions and autobiographical memory in the same framework (i.e. Self Memory System, Associative Network Theory, Structural and Contextual theories and Affect Regulation Theory were discussed to see the full picture. Taken together, these theories seem to have the potential to suggest data-driven models in understanding and explaining symptoms such as flashbacks, dissociation, amnesia, over general memory seen in

  9. Islamic Myths and Memories

    DEFF Research Database (Denmark)

    Islamic myths and collective memory are very much alive in today’s localized struggles for identity, and are deployed in the ongoing construction of worldwide cultural networks. This book brings the theoretical perspectives of myth-making and collective memory to the study of Islam and globalizat....... It shows how contemporary Islamic thinkers and movements respond to the challenges of globalization by preserving, reviving, reshaping, or transforming myths and memories....

  10. Memory T Cell Migration

    OpenAIRE

    Qianqian eZhang; Qianqian eZhang; Fadi G. Lakkis

    2015-01-01

    Immunological memory is a key feature of adaptive immunity. It provides the organism with long-lived and robust protection against infection. In organ transplantation, memory T cells pose a significant threat by causing allograft rejection that is generally resistant to immunosuppressive therapy. Therefore, a more thorough understanding of memory T cell biology is needed to improve the survival of transplanted organs without compromising the host’s ability to fight infections. This review...

  11. Iconic memory requires attention

    OpenAIRE

    Persuh, Marjan; Genzer, Boris; Melara, Robert D.

    2012-01-01

    Two experiments investigated whether attention plays a role in iconic memory, employing either a change detection paradigm (Experiment 1) or a partial-report paradigm (Experiment 2). In each experiment, attention was taxed during initial display presentation, focusing the manipulation on consolidation of information into iconic memory, prior to transfer into working memory. Observers were able to maintain high levels of performance (accuracy of change detection or categorization) even when co...

  12. Configurable unitary transformations and linear logic gates using quantum memories.

    Science.gov (United States)

    Campbell, G T; Pinel, O; Hosseini, M; Ralph, T C; Buchler, B C; Lam, P K

    2014-08-08

    We show that a set of optical memories can act as a configurable linear optical network operating on frequency-multiplexed optical states. Our protocol is applicable to any quantum memories that employ off-resonant Raman transitions to store optical information in atomic spins. In addition to the configurability, the protocol also offers favorable scaling with an increasing number of modes where N memories can be configured to implement arbitrary N-mode unitary operations during storage and readout. We demonstrate the versatility of this protocol by showing an example where cascaded memories are used to implement a conditional cz gate.

  13. Memristive learning and memory functions in polyvinyl alcohol polymer memristors

    Directory of Open Access Journals (Sweden)

    Yan Lei

    2014-07-01

    Full Text Available Polymer based memristive devices can offer simplicity in fabrication and at the same time promise functionalities for artificial neural applications. In this work, inherent learning and memory functions have been achieved in polymer memristive devices employing Polyvinyl Alcohol. The change in conduction in such polymer devices strongly depends on the pulse amplitude, duration and time interval. Through repetitive stimuli training, temporary short-term memory can transfer into consolidated long-term memory. These behaviors bear remarkable similarities to certain learning and memory functions of biological systems.

  14. Development of an extended Kalman filter for the self-sensing application of a spring-biased shape memory alloy wire actuator

    International Nuclear Information System (INIS)

    Gurung, H; Banerjee, A

    2016-01-01

    This report presents the development of an extended Kalman filter (EKF) to harness the self-sensing capability of a shape memory alloy (SMA) wire, actuating a linear spring. The stress and temperature of the SMA wire, constituting the state of the system, are estimated using the EKF, from the measured change in electrical resistance (ER) of the SMA. The estimated stress is used to compute the change in length of the spring, eliminating the need for a displacement sensor. The system model used in the EKF comprises the heat balance equation and the constitutive relation of the SMA wire coupled with the force–displacement behavior of a spring. Both explicit and implicit approaches are adopted to evaluate the system model at each time-update step of the EKF. Next, in the measurement-update step, estimated states are updated based on the measured electrical resistance. It has been observed that for the same time step, the implicit approach consumes less computational time than the explicit method. To verify the implementation, EKF estimated states of the system are compared with those of an established model for different inputs to the SMA wire. An experimental setup is developed to measure the actual spring displacement and ER of the SMA, for any time-varying voltage applied to it. The process noise covariance is decided using a heuristic approach, whereas the measurement noise covariance is obtained experimentally. Finally, the EKF is used to estimate the spring displacement for a given input and the corresponding experimentally obtained ER of the SMA. The qualitative agreement between the EKF estimated displacement with that obtained experimentally reveals the true potential of this approach to harness the self-sensing capability of the SMA. (paper)

  15. Development of an extended Kalman filter for the self-sensing application of a spring-biased shape memory alloy wire actuator

    Science.gov (United States)

    Gurung, H.; Banerjee, A.

    2016-02-01

    This report presents the development of an extended Kalman filter (EKF) to harness the self-sensing capability of a shape memory alloy (SMA) wire, actuating a linear spring. The stress and temperature of the SMA wire, constituting the state of the system, are estimated using the EKF, from the measured change in electrical resistance (ER) of the SMA. The estimated stress is used to compute the change in length of the spring, eliminating the need for a displacement sensor. The system model used in the EKF comprises the heat balance equation and the constitutive relation of the SMA wire coupled with the force-displacement behavior of a spring. Both explicit and implicit approaches are adopted to evaluate the system model at each time-update step of the EKF. Next, in the measurement-update step, estimated states are updated based on the measured electrical resistance. It has been observed that for the same time step, the implicit approach consumes less computational time than the explicit method. To verify the implementation, EKF estimated states of the system are compared with those of an established model for different inputs to the SMA wire. An experimental setup is developed to measure the actual spring displacement and ER of the SMA, for any time-varying voltage applied to it. The process noise covariance is decided using a heuristic approach, whereas the measurement noise covariance is obtained experimentally. Finally, the EKF is used to estimate the spring displacement for a given input and the corresponding experimentally obtained ER of the SMA. The qualitative agreement between the EKF estimated displacement with that obtained experimentally reveals the true potential of this approach to harness the self-sensing capability of the SMA.

  16. Phase change memory

    CERN Document Server

    Qureshi, Moinuddin K

    2011-01-01

    As conventional memory technologies such as DRAM and Flash run into scaling challenges, architects and system designers are forced to look at alternative technologies for building future computer systems. This synthesis lecture begins by listing the requirements for a next generation memory technology and briefly surveys the landscape of novel non-volatile memories. Among these, Phase Change Memory (PCM) is emerging as a leading contender, and the authors discuss the material, device, and circuit advances underlying this exciting technology. The lecture then describes architectural solutions t

  17. Memories Persist in Silence

    Directory of Open Access Journals (Sweden)

    Sandra Patricia Arenas Grisales

    2012-08-01

    Full Text Available This article exposes the hypothesis that memory artifacts, created to commemorate the victims of armed conflict in Colombia, are an expression of the underground memories and a way of political action in the midst of war. We analyze three cases of creations of memory artifacts in Medellín, Colombia, as forms of suffering, perceiving and resisting the power of armed groups in Medellín. The silence, inherent in these objects, should not be treated as an absence of language, but as another form of expression of memory. Silence is a tactic used to overcome losses and reset everyday life in contexts of protracted violence.

  18. Models of Working Memory

    National Research Council Canada - National Science Library

    Miyake, Akira

    1997-01-01

    .... Understanding the mechanisms and structures underlying working memory is, hence, one of the most important scientific issues that need to be addressed to improve the efficiency and performance...

  19. Single-item memory, associative memory, and the human hippocampus

    OpenAIRE

    Gold, Jeffrey J.; Hopkins, Ramona O.; Squire, Larry R.

    2006-01-01

    We tested recognition memory for items and associations in memory-impaired patients with bilateral lesions thought to be limited to the hippocampal region. In Experiment 1 (Combined memory test), participants studied words and then took a memory test in which studied words, new words, studied word pairs, and recombined word pairs were presented in a mixed order. In Experiment 2 (Separated memory test), participants studied single words and then took a memory test involving studied word and ne...

  20. Memory reconsolidation mediates the updating of hippocampal memory content

    OpenAIRE

    Jonathan L C Lee

    2010-01-01

    The retrieval or reactivation of a memory places it into a labile state, requiring a process of reconsolidation to restabilize it. This retrieval-induced plasticity is a potential mechanism for the modification of the existing memory. Following previous data supportive of a functional role for memory reconsolidation in the modification of memory strength, here I show that hippocampal memory reconsolidation also supports the updating of contextual memory content. Using a procedure that se...