Application of phase-change materials in memory taxonomy

OpenAIRE

Wang, Lei; Tu, Liang; Wen, Jing

2017-01-01

Abstract Phase-change materials are suitable for data storage because they exhibit reversible transitions between crystalline and amorphous states that have distinguishable electrical and optical properties. Consequently, these materials find applications in diverse memory devices ranging from conventional optical discs to emerging nanophotonic devices. Current research efforts are mostly devoted to phase-change random access memory, whereas the applications of phase-change materials in other...

A review of emerging non-volatile memory (NVM) technologies and applications

Science.gov (United States)

Chen, An

2016-11-01

This paper will review emerging non-volatile memory (NVM) technologies, with the focus on phase change memory (PCM), spin-transfer-torque random-access-memory (STTRAM), resistive random-access-memory (RRAM), and ferroelectric field-effect-transistor (FeFET) memory. These promising NVM devices are evaluated in terms of their advantages, challenges, and applications. Their performance is compared based on reported parameters of major industrial test chips. Memory selector devices and cell structures are discussed. Changing market trends toward low power (e.g., mobile, IoT) and data-centric applications create opportunities for emerging NVMs. High-performance and low-cost emerging NVMs may simplify memory hierarchy, introduce non-volatility in logic gates and circuits, reduce system power, and enable novel architectures. Storage-class memory (SCM) based on high-density NVMs could fill the performance and density gap between memory and storage. Some unique characteristics of emerging NVMs can be utilized for novel applications beyond the memory space, e.g., neuromorphic computing, hardware security, etc. In the beyond-CMOS era, emerging NVMs have the potential to fulfill more important functions and enable more efficient, intelligent, and secure computing systems.

Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application

Science.gov (United States)

Bae, Hagyoul; Lee, Byung-Hyun; Lee, Dongil; Seol, Myeong-Lok; Kim, Daewon; Han, Jin-Woo; Kim, Choong-Ki; Jeon, Seung-Bae; Ahn, Daechul; Park, Sang-Jae; Park, Jun-Young; Choi, Yang-Kyu

2016-12-01

We report the transient memory device by means of a water soluble SSG (solid sodium with glycerine) paper. This material has a hydroscopic property hence it can be soluble in water. In terms of physical security of memory devices, prompt abrogation of a memory device which stored a large number of data is crucial when it is stolen because all of things have identified information in the memory device. By utilizing the SSG paper as a substrate, we fabricated a disposable resistive random access memory (RRAM) which has good data retention of longer than 106 seconds and cycling endurance of 300 cycles. This memory device is dissolved within 10 seconds thus it can never be recovered or replicated. By employing direct printing but not lithography technology to aim low cost and disposable applications, the memory capacity tends to be limited less than kilo-bits. However, unlike high memory capacity demand for consumer electronics, the proposed device is targeting for security applications. With this regards, the sub-kilobit memory capacity should find the applications such as one-time usable personal identification, authentication code storage, cryptography key, and smart delivery tag. This aspect is attractive for security and protection system against unauthorized accessibility.

Ferroelectric-gate field effect transistor memories device physics and applications

CERN Document Server

Ishiwara, Hiroshi; Okuyama, Masanori; Sakai, Shigeki; Yoon, Sung-Min

2016-01-01

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handic...

Shape Memory Alloys (Part II: Classification, Production and Application

Directory of Open Access Journals (Sweden)

I. Ivanic

2014-09-01

Full Text Available Shape memory alloys (SMAs have been extensively investigated because of their unique shape memory behaviour, i.e. their ability to recover their original shape they had before deformation. Shape memory effect is related to the thermoelastic martensitic transformation. Austenite to martensite phase transformation can be obtained by mechanical (loading and thermal methods (heating and cooling. Depending on thermomechanical conditions, SMAs demonstrate several thermomechanical phenomena, such as pseudoelasticity, superelasticity, shape memory effect (one-way and two-way and rubber-like behaviour. Numerous alloys show shape memory effect (NiTi-based alloys, Cu-based alloys, Fe-based alloys etc.. Nitinol (NiTi is the most popular and the most commonly used SMA due to its superior thermomechanical and thermoelectrical properties. NiTi alloys have greater shape memory strain and excellent corrosion resistance compared to Cu – based alloys. However, they are very costly. On the other hand, copper-based alloys (CuZn and CuAl based alloys are much less expensive, easier to manufacture and have a wider range of potential transformation temperatures. The characteristic transformation temperatures of martensitic transformation of CuAlNi alloys can lie between −200 and 200 °C, and these temperatures depend on Al and Ni content. Among the Cu – based SMAs, the most frequently applied are CuZnAl and CuAlNi alloys. Although CuZnAl alloys with better mechanical properties are the most popular among the Cu-based SMAs, they lack sufficient thermal stability, while CuAlNi shape memory alloys, in spite of their better thermal stability, have found only limited applications due to insufficient formability owing to the brittle γ2 precipitates. The most important disadvantage of polycrystalline CuAlNi alloys is a small reversible deformation (one-way shape memory effect: up to 4 %; two-way shape memory effect: only approximately 1.5 % due to intergranular

Communication and Memory Architecture Design of Application-Specific High-End Multiprocessors

Directory of Open Access Journals (Sweden)

Yahya Jan

2012-01-01

Full Text Available This paper is devoted to the design of communication and memory architectures of massively parallel hardware multiprocessors necessary for the implementation of highly demanding applications. We demonstrated that for the massively parallel hardware multiprocessors the traditionally used flat communication architectures and multi-port memories do not scale well, and the memory and communication network influence on both the throughput and circuit area dominates the processors influence. To resolve the problems and ensure scalability, we proposed to design highly optimized application-specific hierarchical and/or partitioned communication and memory architectures through exploring and exploiting the regularity and hierarchy of the actual data flows of a given application. Furthermore, we proposed some data distribution and related data mapping schemes in the shared (global partitioned memories with the aim to eliminate the memory access conflicts, as well as, to ensure that our communication design strategies will be applicable. We incorporated these architecture synthesis strategies into our quality-driven model-based multi-processor design method and related automated architecture exploration framework. Using this framework, we performed a large series of experiments that demonstrate many various important features of the synthesized memory and communication architectures. They also demonstrate that our method and related framework are able to efficiently synthesize well scalable memory and communication architectures even for the high-end multiprocessors. The gains as high as 12-times in performance and 25-times in area can be obtained when using the hierarchical communication networks instead of the flat networks. However, for the high parallelism levels only the partitioned approach ensures the scalability in performance.

Shape memory effect and super elasticity. Its dental applications.

Science.gov (United States)

Kotian, R

2001-01-01

The shape memory alloys are quite fascinating materials characterized by a shape memory effect and super elasticity which ordinary metals do not have. This unique behaviour was first found in a Au-47.5 at % Cd alloy in 1951, and was published in 1963 by the discovery of Ti-Ni alloy. Shape memory alloys now being practically used as new functional alloys for various dental and medical applications.

Ferrite materials for memory applications

CERN Document Server

Saravanan, R

2017-01-01

The book discusses the synthesis and characterization of various ferrite materials used for memory applications. The distinct feature of the book is the construction of charge density of ferrites by deploying the maximum entropy method (MEM). This charge density gives the distribution of charges in the ferrite unit cell, which is analyzed for charge related properties.

Application of reflective memory network in Tokamak fast controller

International Nuclear Information System (INIS)

Weng Chuqiao; Zhang Ming; Liu Rui; Zheng Wei; Zhuang Ge

2014-01-01

A specific application of reflective memory network in Tokamak fast controller was introduced in this paper. The PMC-5565 reflective memory card and ACC-5565 network hub were used to build a reflective memory real-time network to test its real- time function. The real-time, rapidity and determinacy of the time delay for fast controller controlling power device under the reflective memory network were tested in the LabVIEW RT real-time operation system. Depending on the reflective memory technology, the data in several fast controllers were synchronized, and multiple control tasks using a single control task were finished. The experiment results show that the reflective memory network can meet the real-time requirements for fast controller to perform the feedback control over devices. (authors)

Memory skills of deaf learners: implications and applications.

Science.gov (United States)

Hamilton, Harley

2011-01-01

The author reviews research on working memory and short-term memory abilities of deaf individuals, delineating strengths and weaknesses. Among the areas of weakness that are reviewed are sequential recall, processing speed, attention, and memory load. Areas of strengths include free recall, visuospatial recall, imagery, and dual encoding. Phonological encoding and rehearsal appear to be strengths when these strategies are employed. The implications of the strengths and weaknesses for language learning and educational achievement are discussed. Research questions are posed, and remedial and compensatory classroom applications are suggested.

Application of source biasing technique for energy efficient DECODER circuit design: memory array application

Science.gov (United States)

Gupta, Neha; Parihar, Priyanka; Neema, Vaibhav

2018-04-01

Researchers have proposed many circuit techniques to reduce leakage power dissipation in memory cells. If we want to reduce the overall power in the memory system, we have to work on the input circuitry of memory architecture i.e. row and column decoder. In this research work, low leakage power with a high speed row and column decoder for memory array application is designed and four new techniques are proposed. In this work, the comparison of cluster DECODER, body bias DECODER, source bias DECODER, and source coupling DECODER are designed and analyzed for memory array application. Simulation is performed for the comparative analysis of different DECODER design parameters at 180 nm GPDK technology file using the CADENCE tool. Simulation results show that the proposed source bias DECODER circuit technique decreases the leakage current by 99.92% and static energy by 99.92% at a supply voltage of 1.2 V. The proposed circuit also improves dynamic power dissipation by 5.69%, dynamic PDP/EDP 65.03% and delay 57.25% at 1.2 V supply voltage.

Thin film shape memory alloys for optical sensing applications

International Nuclear Information System (INIS)

Fu, Y Q; Luo, J K; Huang, W M; Flewitt, A J; Milne, W I

2007-01-01

Based on shape memory effect of the sputtered thin film shape memory alloys, different types of micromirror structures were designed and fabricated for optical sensing application. Using surface micromachining, TiNi membrane mirror structure has been fabricated, which can be actuated based on intrinsic two-way shape memory effect of the free-standing TiNi film. Using bulk micromachining, TiNi/Si and TiNi/Si 3 N 4 microcantilever mirror structures were fabricated

Applications of shape memory alloys in Japan

International Nuclear Information System (INIS)

Asai, M.; Suzuki, Y.

2000-01-01

In Japan, a first application of shape memory TiNi alloy was a moving flap in an air-conditioner which was developed as sensing function of shape memory alloy at Matsushista Electric Industrial Co. Then, shape memory utilized in a coffee maker, an electric rice-cooker, a thermal mixing valve and etc. were commercialized in Japan. And brassiere wires, a guide wire for medical treatment, an antenna for portable telephone and others were commercialized utilizing superelasticity. At the same time with these commercial products, there was not only progress in fabrication technology to effect accurate transformation temperature, but also the discovery of small hysteresis alloy such as R-phase or TiNiCu alloy and low transformation temperature alloy such as TiNiFe, TiNiV and TiNiCo alloys. Therefore the shape memory alloy market has expanded widely to electric appliances, automobile, residence, medical care and other field today. (orig.)

TiAu based shape memory alloys for high temperature applications

International Nuclear Information System (INIS)

Wadood, Abdul; Yamabe-Mitarai, Yoko; Hosoda, Hideki

2014-01-01

TiAu (equiatomic) exhibits phase transformaion from B2 (ordered bcc) to thermo-elastic orthorhombic B19 martensite at about 875K and thus TiAu is categorized as high temperature shape memory alloy. In this study, recent research and developments related to TiAu based high temperature shape memory alloys will be discussed in the Introduction part. Then some results of our research group related to strengthening of TiAu based high temperature shape memory alloys will be presented. Potential of TiAu based shape memory alloys for high temperature shape memory materials applications will also be discussed

Performance characteristics of shape memory alloy and its applications for fusion technology

International Nuclear Information System (INIS)

Nishikawa, Masahiro; Watanabe, Kenji

1987-01-01

As a shape memory alloy, Au-Cd alloy was found in 1951. Thereafter, also in In-Tl alloy, shape memory effect was found. The U.S. Naval Ordinance Laboratory developed Ni-Ti alloy, and published in 1965 as NITINOL. As Cu group shape memory alloys, there are Cu-Zn-Al alloy, Cu-Al-Be alloy and Cu-Al-Ni alloy. Recently, iron group shape memory alloy was published. In 1975, 'Shape memory effect and its application' symposium, in 1978, 'NITINOL heat engine international conference', and in 1982 and 1986, 'Martensite transformation international conference' were held, and the method of the proper use of shape memory alloys and the problems of the alloys themselves such as fatigue have been gradually clarified. In this report, the fundamental action characteristics of shape memory alloys are discribed from the viewpoint of the application, and the possibility of applying these characteristics to nuclear fusion devices and the advantage obtained as the result are explained. Shape memory effect and pseudo-elasticity, reversible shape memory effect, the thermodynamic behavior of shape memory alloys, transformation temperature range and using temperature range and so on are described. (Kako, I.)

Memory Applications Using Resonant Tunneling Diodes

Science.gov (United States)

Shieh, Ming-Huei

Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

Improving Transactional Memory Performance for Irregular Applications

OpenAIRE

Pedrero, Manuel; Gutiérrez, Eladio; Romero, Sergio; Plata, Óscar

2015-01-01

Transactional memory (TM) offers optimistic concurrency support in modern multicore archi- tectures, helping the programmers to extract parallelism in irregular applications when data dependence information is not available before runtime. In fact, recent research focus on ex- ploiting thread-level parallelism using TM approaches. However, the proposed techniques are of general use, valid for any type of application. This work presents ReduxSTM, a software TM system specially d...

CMOS technology: a critical enabler for free-form electronics-based killer applications

KAUST Repository

Hussain, Muhammad Mustafa; Hussain, Aftab M.; Hanna, Amir

2016-01-01

Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today

Properties and medical applications of shape memory alloys.

Science.gov (United States)

Tarniţă, Daniela; Tarniţă, D N; Bîzdoacă, N; Mîndrilă, I; Vasilescu, Mirela

2009-01-01

One of the most known intelligent material is nitinol, which offers many functional advantages over conventional implantable alloys. Applications of SMA to the biomedical field have been successful because of their functional qualities, enhancing both the possibility and the execution of less invasive surgeries. The biocompatibility of these alloys is one of their most important features. Different applications exploit the shape memory effect (one-way or two-way) and the super elasticity, so that they can be employed in orthopedic and cardiovascular applications, as well as in the manufacture of new surgical tools. Therefore, one can say that smart materials, especially SMA, are becoming noticeable in the biomedical field. Super elastic NiTi has become a material of strategic importance as it allows to overcome a wide range of technical and design issues relating to the miniaturization of medical devices and the increasing trend for less invasive and therefore less traumatic procedures. This paper will consider just why the main properties of shape memory alloys hold so many opportunities for medical devices and will review a selection of current applications.

Application of shape memory alloys in bolted flanged connections

International Nuclear Information System (INIS)

Zhu Shichun; Lu Xiaofeng

2009-01-01

The Shape Memory Effect (SME) and super elasticity of the Shape Memory Alloys (SMA) can make up the clamping force decreasing caused by the creep and relaxation behavior in Bolted Flanged Connections (BFC), and improve the reliability of the BFC. Advances in the research of SMA in BFC home and abroad is summarized in this paper. The application prospects of Ti-Ni-Pd, Ti-Ni-Hf, Fe-Mn-Si, Cu-Al-Ni and Ni-Al-Mn in the BFC are also discussed. It is considered that the compressive characteristics of the parent phase of SMA should be studied further for the application of SMA to BFC besides the design of sealing structure. When more basic research data is accumulated, BFC with high sealing performance for the critical engineering applications can be developed based on the comprehensive consideration of the stability and reliability of the clamping force. (authors)

Multistate Resistive Switching Memory for Synaptic Memory Applications

KAUST Repository

Hota, Mrinal Kanti

2016-07-12

Reproducible low bias bipolar resistive switching memory in HfZnOx based memristors is reported. The modification of the concentration of oxygen vacancies in the ternary oxide film, which is facilitated by adding ZnO into HfO2, results in improved memory operation by the ternary oxide compared to the single binary oxides. A controlled multistate memory operation is achieved by controlling current compliance and RESET stop voltages. A high DC cyclic stability up to 400 cycles in the multistate memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies and modulation of the interfacial layers. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Biomedical Applications of Thermally Activated Shape Memory Polymers

Energy Technology Data Exchange (ETDEWEB)

Small IV, W; Singhal, P; Wilson, T S; Maitland, D J

2009-04-10

Shape memory polymers (SMPs) are smart materials that can remember a primary shape and can return to this primary shape from a deformed secondary shape when given an appropriate stimulus. This property allows them to be delivered in a compact form via minimally invasive surgeries in humans, and deployed to achieve complex final shapes. Here we review the various biomedical applications of SMPs and the challenges they face with respect to actuation and biocompatibility. While shape memory behavior has been demonstrated with heat, light and chemical environment, here we focus our discussion on thermally stimulated SMPs.

Statistical Inference on Memory Structure of Processes and Its Applications to Information Theory

Science.gov (United States)

2016-05-12

Distribution Unlimited UU UU UU UU 12-05-2016 15-May-2014 14-Feb-2015 Final Report: Statistical Inference on Memory Structure of Processes and Its Applications ...ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 mathematical statistics ; time series; Markov chains; random...journals: Final Report: Statistical Inference on Memory Structure of Processes and Its Applications to Information Theory Report Title Three areas

Multistate Resistive Switching Memory for Synaptic Memory Applications

KAUST Repository

Hota, Mrinal Kanti; Hedhili, Mohamed N.; Wehbe, Nimer; McLachlan, Martyn A.; Alshareef, Husam N.

2016-01-01

memory performance is observed. Conventional synaptic operation in terms of potentiation, depression plasticity, and Ebbinghaus forgetting process are also studied. The memory mechanism is shown to originate from the migration of the oxygen vacancies

A review on shape memory alloys with applications to morphing aircraft

International Nuclear Information System (INIS)

Barbarino, S; Saavedra Flores, E I; Ajaj, R M; Dayyani, I; Friswell, M I

2014-01-01

Shape memory alloys (SMAs) are a unique class of metallic materials with the ability to recover their original shape at certain characteristic temperatures (shape memory effect), even under high applied loads and large inelastic deformations, or to undergo large strains without plastic deformation or failure (super-elasticity). In this review, we describe the main features of SMAs, their constitutive models and their properties. We also review the fatigue behavior of SMAs and some methods adopted to remove or reduce its undesirable effects. SMAs have been used in a wide variety of applications in different fields. In this review, we focus on the use of shape memory alloys in the context of morphing aircraft, with particular emphasis on variable twist and camber, and also on actuation bandwidth and reduction of power consumption. These applications prove particularly challenging because novel configurations are adopted to maximize integration and effectiveness of SMAs, which play the role of an actuator (using the shape memory effect), often combined with structural, load-carrying capabilities. Iterative and multi-disciplinary modeling is therefore necessary due to the fluid–structure interaction combined with the nonlinear behavior of SMAs. (topical review)

Application of Shape Memory Alloys in Seismic Isolation: A Review

Directory of Open Access Journals (Sweden)

Shaghayegh Alvandi

2014-12-01

Full Text Available In the last two decades, there has been an increasing interest in structural engineering control methods. Shape memory alloys and seismic isolation systems are examples of passive control systems that use of any one alone, effectively improve the seismic performance of the structure. Characteristics such as large strain range without any residual deformation, high damping capacity, excellent re-centering, high resistance to fatigue and corrosion and durability have made shape memory alloy an effective damping device or part of base isolators. A unique characteristic of shape memory alloys is in recovering residual deformations even after strong ground excitations. Seismic isolation is a device to lessen earthquake damage prospects. In the latest research studies, shape memory alloy is utilized in combination with seismic isolation system and their results indicate the effectiveness of the application of them to control the response of the structures. This paper reviews the findings of research studies on base isolation system implemented in the building and/or bridge structures by including the unique behavior of shape memory alloys. This study includes the primary information about the characteristic of the isolation system as well as the shape memory material. The efficiency and feasibility of the two mechanisms are also presented by few cases in point.

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

Energy Technology Data Exchange (ETDEWEB)

Normand, P. E-mail: p.normand@imel.demokritos.gr; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M

2004-02-01

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications.

Nanocrystals manufacturing by ultra-low-energy ion-beam-synthesis for non-volatile memory applications

International Nuclear Information System (INIS)

Normand, P.; Kapetanakis, E.; Dimitrakis, P.; Skarlatos, D.; Beltsios, K.; Tsoukalas, D.; Bonafos, C.; Ben Assayag, G.; Cherkashin, N.; Claverie, A.; Berg, J.A. van den; Soncini, V.; Agarwal, A.; Ameen, M.; Perego, M.; Fanciulli, M.

2004-01-01

An overview of recent developments regarding the fabrication and structure of thin silicon dioxide films with embedded nanocrystals through ultra-low-energy ion-beam-synthesis (ULE-IBS) is presented. Advances in fabrication, increased understanding of structure formation processes and ways to control them allow for the fabrication of reproducible and attractive silicon-nanocrystal memory devices for a wide-range of memory applications as herein demonstrated in the case of low-voltage EEPROM-like applications

Design of two-terminal PNPN diode for high-density and high-speed memory applications

International Nuclear Information System (INIS)

Tong Xiaodong; Wu Hao; Liang Qingqing; Zhong Huicai; Zhu Huilong; Zhao Chao; Ye Tianchun

2014-01-01

A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design for high-speed operations was studied with experiments and calibrated simulations, which proves that the proposed memory cell can be operated at nanosecond range. The static and dynamic power dissipations were also studied, which indicated the availability of the proposed memory cell for VLSI applications. Moreover, the memory cell is compatible with CMOS process, has little impact from process variation, and has good reliability. (semiconductor devices)

Modeling Students' Memory for Application in Adaptive Educational Systems

Science.gov (United States)

Pelánek, Radek

2015-01-01

Human memory has been thoroughly studied and modeled in psychology, but mainly in laboratory setting under simplified conditions. For application in practical adaptive educational systems we need simple and robust models which can cope with aspects like varied prior knowledge or multiple-choice questions. We discuss and evaluate several models of…

Applications and development of shape-memory and superelastic alloys in Japan

Energy Technology Data Exchange (ETDEWEB)

Takaoka, S.; Horikawa, H. [Furukawa Electric Co., Ltd., Hiratsuka (Japan); Kobayashi, J. [Japan Association of Shape Memory Alloys, Yokohama (Japan); Shimizu, K. [Kanazawa Inst. of Tech., Matsutou (Japan)

2002-07-01

The present situation of the applications and development of shape memory and superelastic alloys in Japan will collectively be introduced. Of many shape memory alloys, TiNi alloy systems have mostly been used for the applications from the point of view of fatigue and corrosion characteristics. Shape memory effect has been utilized for mainly thermal actuators with the form of coil springs. The effect associated with the B2 to R-phase transformation and its reversion exhibits recoverable strain of approximately 1%, and after a million thermal cycles the recovery characteristics are not affected. Thus, the effect is widely utilized as sensor flap of the air conditioner, water flow control valve, underfloor vent, automatic oil volume adjusting equipment for Shinkansen and water mixing valve. Another effect associated with the B2 to orthorhombic transformation and its reversion, as in TiNiCu alloys containing Cu more than 8%, can be applied to actuators required for 10,000 to 50,000 times life, and thus it is utilized as rice cooker, coffee maker and anti-scald valve. In Japan, however, the TiNi shape memory alloy systems are mainly used for applications using the superelasticity, like a rubber material. The superelasticity associated with the B2 to monoclinic stress-induced transformation and its reversion upon un-loading has been utilized as brassiere wire, eye glasses flame, antenna core wire for cellular phone and fishing wire, and that associated with the B2 to orthorhombic stress-induced transformation and its reversion upon un-loading has been as orthodontic wire, because the TiNiCu alloy wire exhibits smaller stress hysteresis than that of usual TiNi alloy wire. The TiNi shape memory alloy systems are now developed to make various shapes, such as tapes, foils and tubes, and the alloys with those shapes are examined to apply to medical uses, such as guide wire for catheter and catheter tube itself, and to any other uses. The development in Japan is rapidly

MoO3 trapping layers with CF4 plasma treatment in flash memory applications

International Nuclear Information System (INIS)

Kao, Chuyan Haur; Chen, Hsiang; Chen, Su-Zhien; Chen, Chian Yu; Lo, Kuang-Yu; Lin, Chun Han

2014-01-01

Highlights: • MoO 3 -based flash memories have been fabricated. • CF4 plasma treatment could enhance good memory performance. • Material analyses confirm that plasma treatment eliminated defects. • Fluorine atoms might fix the dangling bonds. - Abstract: In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications

Phosphorene/ZnO Nano-Heterojunctions for Broadband Photonic Nonvolatile Memory Applications.

Science.gov (United States)

Hu, Liang; Yuan, Jun; Ren, Yi; Wang, Yan; Yang, Jia-Qin; Zhou, Ye; Zeng, Yu-Jia; Han, Su-Ting; Ruan, Shuangchen

2018-06-10

High-performance photonic nonvolatile memory combining photosensing and data storage with low power consumption ensures the energy efficiency of computer systems. This study first reports in situ derived phosphorene/ZnO hybrid heterojunction nanoparticles and their application in broadband-response photonic nonvolatile memory. The photonic nonvolatile memory consistently exhibits broadband response from ultraviolet (380 nm) to near infrared (785 nm), with controllable shifts of the SET voltage. The broadband resistive switching is attributed to the enhanced photon harvesting, a fast exciton separation, as well as the formation of an oxygen vacancy filament in the nano-heterojunction. In addition, the device exhibits an excellent stability under air exposure compared with reported pristine phosphorene-based nonvolatile memory. The superior antioxidation capacity is believed to originate from the fast transfer of lone-pair electrons of phosphorene. The unique assembly of phosphorene/ZnO nano-heterojunctions paves the way toward multifunctional broadband-response data-storage techniques. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

PROPERTY DATABASE FOR THE DEVELOPMENT OF SHAPE MEMORY ALLOY APPLICATIONS

OpenAIRE

Tang , W.; CederstrÖm , J.; SandstrÖm , R.

1991-01-01

Important points involving the selection of shape memory alloy (SMA) application projects are discussed. The development of a property database for SMA is initiated. Both conventional data as well as characteristics which are unique for SMA are stored. As an application example of the database SMA-SELECT, important properties for Ti-Ni alloys near equi-atomic composition, such as temperature window width for superelasticity (SE), stress rate, critical yield stress, and their interaction have ...

Homogeneous-oxide stack in IGZO thin-film transistors for multi-level-cell NAND memory application

Science.gov (United States)

Ji, Hao; Wei, Yehui; Zhang, Xinlei; Jiang, Ran

2017-11-01

A nonvolatile charge-trap-flash memory that is based on amorphous indium-gallium-zinc-oxide thin film transistors was fabricated with a homogeneous-oxide structure for a multi-level-cell application. All oxide layers, i.e., tunneling layer, charge trapping layer, and blocking layer, were fabricated with Al2O3 films. The fabrication condition (including temperature and deposition method) of the charge trapping layer was different from those of the other oxide layers. This device demonstrated a considerable large memory window of 4 V between the states fully erased and programmed with the operation voltage less than 14 V. This kind of device shows a good prospect for multi-level-cell memory applications.

[A neuropsychoanalytic freudian model of psychic trauma and memory. Theoretical and clinical applications].

Science.gov (United States)

Cohen, Diego; Basili, Rubén; Sharpin de Basili, Isabel

2009-01-01

The traumatic memory is conceptualized by means of an amplified Freudian neuropsychoanalytic model using a contemporary memory system based on its contents, conscious and unconscious recollection (explicit and implicit memories) highlighting the validity of the Freudian discoveries. This is then related to the psychoanalytical theories of consciousness, affects and thinking. Particular importance is given to Freud's seduction theory, its relation to memory and the clinical application of these concepts to the basic organization of the personality, together with the relation to Bowlby's concept of emotional deprivation. The development and working trough of trauma is postulated as a vector to make "real" or phantasized trauma unconscious through repression in neurosis, splitting in borderline personality organization, and primitive mechanisms of projection in psychosis.

Estimation and Application of Ecological Memory Functions in Time and Space

Science.gov (United States)

Itter, M.; Finley, A. O.; Dawson, A.

2017-12-01

A common goal in quantitative ecology is the estimation or prediction of ecological processes as a function of explanatory variables (or covariates). Frequently, the ecological process of interest and associated covariates vary in time, space, or both. Theory indicates many ecological processes exhibit memory to local, past conditions. Despite such theoretical understanding, few methods exist to integrate observations from the recent past or within a local neighborhood as drivers of these processes. We build upon recent methodological advances in ecology and spatial statistics to develop a Bayesian hierarchical framework to estimate so-called ecological memory functions; that is, weight-generating functions that specify the relative importance of local, past covariate observations to ecological processes. Memory functions are estimated using a set of basis functions in time and/or space, allowing for flexible ecological memory based on a reduced set of parameters. Ecological memory functions are entirely data driven under the Bayesian hierarchical framework—no a priori assumptions are made regarding functional forms. Memory function uncertainty follows directly from posterior distributions for model parameters allowing for tractable propagation of error to predictions of ecological processes. We apply the model framework to simulated spatio-temporal datasets generated using memory functions of varying complexity. The framework is also applied to estimate the ecological memory of annual boreal forest growth to local, past water availability. Consistent with ecological understanding of boreal forest growth dynamics, memory to past water availability peaks in the year previous to growth and slowly decays to zero in five to eight years. The Bayesian hierarchical framework has applicability to a broad range of ecosystems and processes allowing for increased understanding of ecosystem responses to local and past conditions and improved prediction of ecological

Bipolar one diode-one resistor integration for high-density resistive memory applications.

Science.gov (United States)

Li, Yingtao; Lv, Hangbing; Liu, Qi; Long, Shibing; Wang, Ming; Xie, Hongwei; Zhang, Kangwei; Huo, Zongliang; Liu, Ming

2013-06-07

Different from conventional unipolar-type 1D-1R RRAM devices, a bipolar-type 1D-1R memory device concept is proposed and successfully demonstrated by the integration of Ni/TiOx/Ti diode and Pt/HfO2/Cu bipolar RRAM cell to suppress the undesired sneak current in a cross-point array. The bipolar 1D-1R memory device not only achieves self-compliance resistive switching characteristics by the reverse bias current of the Ni/TiOx/Ti diode, but also exhibits excellent bipolar resistive switching characteristics such as uniform switching, satisfactory data retention, and excellent scalability, which give it high potentiality for high-density integrated nonvolatile memory applications.

Microelectronics and nanoelectronics trends, and applications to HEP instrumentation

CERN Multimedia

CERN. Geneva

2004-01-01

Lecture 1 : Microelectronics and HEP instrumentation CMOS technology has been the leading technology in microelectronics for more that 30 years thanks to its outstanding capability to miniaturization and low power consumption. A brief history of the microelectronics semiconductor industry is presented with applications for LEP and LHC experiments. Lecture 2: Future trends in microelectronics and nanoelectronics Trends in miniaturization point to the fabrication of ULSI nanoscale CMOS circuits by the end of the decade. Device issues and quantum effects in nanoscale MOS transistor will be discussed. Beyond CMOS technology, several technology avenues based on nanotechnology are under investigation. We will present some promising nanoelectronic devices and circuits based on Single Electron Tunneling (SET) transistor, nanowire, quantum dot and carbon nanotubes. Lecture 3: Monolithic pixel detectors Microvertex detectors for particle physics experiments currently uses hybrid silicon pixel detector. Novel emerging m...

Semiconductors and semimetals oxygen in silicon

CERN Document Server

Willardson, Robert K; Beer, Albert C; Shimura, Fumio

1994-01-01

This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen.Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals for VLSI and ULSI applications* Thorough coverage from crystal growth to device fabrication* Edited by technical experts in the field* Written by recognized authorities from industrial and academic institutions* Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research* 297 original line drawings

Characterizing Memory Usage Behavior in Memory-related Code Changes

OpenAIRE

Wong, Howard Wah

2017-01-01

With the heavy memory pressure produced by multi-core systems and with memory per- formance trailing processor performance, today’s application developers need to consider the memory subsystem during software development. In particular, optimizing software re- quires a deep understanding of how the software uses the memory and how the hardware satisfies the memory requests. In order to accelerate development, programmers rely on soft- ware tools such as profilers for insightful analysis. Howe...

The future of memory

Science.gov (United States)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

A novel 2 T P-channel nano-crystal memory for low power/high speed embedded NVM applications

International Nuclear Information System (INIS)

Zhang Junyu; Wang Yong; Liu Jing; Zhang Manhong; Xu Zhongguang; Huo Zongliang; Liu Ming

2012-01-01

We introduce a novel 2 T P-channel nano-crystal memory structure for low power and high speed embedded non-volatile memory (NVM) applications. By using the band-to-band tunneling-induced hot-electron (BTBTIHE) injection scheme, both high-speed and low power programming can be achieved at the same time. Due to the use of a select transistor, the 'erased states' can be set to below 0 V, so that the periphery HV circuit (high-voltage generating and management) and read-out circuit can be simplified. Good memory cell performance has also been achieved, including a fast program/erase (P/E) speed (a 1.15 V memory window under 10 μs program pulse), an excellent data retention (only 20% charge loss for 10 years). The data shows that the device has strong potential for future embedded NVM applications. (semiconductor devices)

Progress In Optical Memory Technology

Science.gov (United States)

Tsunoda, Yoshito

1987-01-01

More than 20 years have passed since the concept of optical memory was first proposed in 1966. Since then considerable progress has been made in this area together with the creation of completely new markets of optical memory in consumer and computer application areas. The first generation of optical memory was mainly developed with holographic recording technology in late 1960s and early 1970s. Considerable number of developments have been done in both analog and digital memory applications. Unfortunately, these technologies did not meet a chance to be a commercial product. The second generation of optical memory started at the beginning of 1970s with bit by bit recording technology. Read-only type optical memories such as video disks and compact audio disks have extensively investigated. Since laser diodes were first applied to optical video disk read out in 1976, there have been extensive developments of laser diode pick-ups for optical disk memory systems. The third generation of optical memory started in 1978 with bit by bit read/write technology using laser diodes. Developments of recording materials including both write-once and erasable have been actively pursued at several research institutes. These technologies are mainly focused on the optical memory systems for computer application. Such practical applications of optical memory technology has resulted in the creation of such new products as compact audio disks and computer file memories.

Memory-cenric video processing

NARCIS (Netherlands)

Beric, A.; Meerbergen, van J.; Haan, de G.; Sethuraman, R.

2008-01-01

This work presents a domain-specific memory subsystem based on a two-level memory hierarchy. It targets the application domain of video post-processing applications including video enhancement and format conversion. These applications are based on motion compensation and/or broad class of content

Applicability of the Rivermead Behavioural Memory Test - Third Edition (RBMT-3) in Korsakoff's syndrome and chronic alcoholics

NARCIS (Netherlands)

Wester, A.J.; Herten, J.C. van; Egger, J.I.; Kessels, R.P.C.

2013-01-01

PURPOSE: To examine the applicability of the newly developed Rivermead Behavioural Memory Test - Third Edition (RBMT-3) as an ecologically-valid memory test in patients with alcohol-related cognitive disorders. PATIENTS AND METHODS: An authorized Dutch translation of the RBMT-3 was developed,

Fabrication of poly(methyl methacrylate)-MoS{sub 2}/graphene heterostructure for memory device application

Energy Technology Data Exchange (ETDEWEB)

Shinde, Sachin M.; Tanemura, Masaki [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp [Department of Frontier Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan); Center for Fostering Young and Innovative Researchers, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555 (Japan)

2014-12-07

Combination of two dimensional graphene and semi-conducting molybdenum disulfide (MoS{sub 2}) is of great interest for various electronic device applications. Here, we demonstrate fabrication of a hybridized structure with the chemical vapor deposited graphene and MoS{sub 2} crystals to configure a memory device. Elongated hexagonal and rhombus shaped MoS{sub 2} crystals are synthesized by sulfurization of thermally evaporated molybdenum oxide (MoO{sub 3}) thin film. Scanning transmission electron microscope studies reveal atomic level structure of the synthesized high quality MoS{sub 2} crystals. In the prospect of a memory device fabrication, poly(methyl methacrylate) (PMMA) is used as an insulating dielectric material as well as a supporting layer to transfer the MoS{sub 2} crystals. In the fabricated device, PMMA-MoS{sub 2} and graphene layers act as the functional and electrode materials, respectively. Distinctive bistable electrical switching and nonvolatile rewritable memory effect is observed in the fabricated PMMA-MoS{sub 2}/graphene heterostructure. The developed material system and demonstrated memory device fabrication can be significant for next generation data storage applications.

Applicability of the Rivermead Behavioural Memory Test - Third Edition (RBMT-3) in Korsakoff's syndrome and chronic alcoholics

NARCIS (Netherlands)

Wester, A.J.; Herten, J.C. van; Egger, J.I.M.; Kessels, R.P.C.

2013-01-01

Purpose: To examine the applicability of the newly developed Rivermead Behavioural Memory Test – Third Edition (RBMT-3) as an ecologically-valid memory test in patients with alcohol-related cognitive disorders. Patients and methods: An authorized Dutch translation of the RBMT-3 was developed,

Biodegradable toughened nanohybrid shape memory polymer for smart biomedical applications.

Science.gov (United States)

Biswas, Arpan; Singh, Akhand Pratap; Rana, Dipak; Aswal, Vinod K; Maiti, Pralay

2018-05-17

A polyurethane nanohybrid has been prepared through the in situ polymerization of an aliphatic diisocyanate, ester polyol and a chain extender in the presence of two-dimensional platelets. Polymerization within the platelet galleries helps to intercalate, generate diverse nanostructure and improve the nano to macro scale self-assembly, which leads to a significant enhancement in the toughness and thermal stability of the nanohybrid in comparison to pure polyurethane. The extensive interactions, the reason for property enhancement, between nanoplatelets and polymer chains are revealed through spectroscopic measurements and thermal studies. The nanohybrid exhibits significant improvement in the shape memory phenomena (91% recovery) at the physiological temperature, which makes it suitable for many biomedical applications. The structural alteration, studied through temperature dependent small angle neutron scattering and X-ray diffraction, along with unique crystallization behavior have extensively revealed the special shape memory behavior of this nanohybrid and facilitated the understanding of the molecular flipping in the presence of nanoplatelets. Cell line studies and subsequent imaging testify that this nanohybrid is a superior biomaterial that is suitable for use in the biomedical arena. In vivo studies on albino rats exhibit the potential of the shape memory effect of the nanohybrid as a self-tightening suture in keyhole surgery by appropriately closing the lips of the wound through the recovery of the programmed shape at physiological temperature with faster healing of the wound and without the formation of any scar. Further, the improved biodegradable nature along with the rapid self-expanding ability of the nanohybrid at 37 °C make it appropriate for many biomedical applications including a self-expanding stent for occlusion recovery due to its tough and flexible nature.

Memory Skills of Deaf Learners: Implications and Applications

Science.gov (United States)

Hamilton, Harley

2011-01-01

This paper will review research on working memory and short-term memory abilities of deaf individuals delineating strengths and weaknesses. The areas of memory reviewed include weaknesses such as sequential recall, processing speed, attention, and memory load. Strengths include free recall, visuospatial recall, imagery and dual encoding.…

Compact modeling of CRS devices based on ECM cells for memory, logic and neuromorphic applications

International Nuclear Information System (INIS)

Linn, E; Ferch, S; Waser, R; Menzel, S

2013-01-01

Dynamic physics-based models of resistive switching devices are of great interest for the realization of complex circuits required for memory, logic and neuromorphic applications. Here, we apply such a model of an electrochemical metallization (ECM) cell to complementary resistive switches (CRSs), which are favorable devices to realize ultra-dense passive crossbar arrays. Since a CRS consists of two resistive switching devices, it is straightforward to apply the dynamic ECM model for CRS simulation with MATLAB and SPICE, enabling study of the device behavior in terms of sweep rate and series resistance variations. Furthermore, typical memory access operations as well as basic implication logic operations can be analyzed, revealing requirements for proper spike and level read operations. This basic understanding facilitates applications of massively parallel computing paradigms required for neuromorphic applications. (paper)

A shared memory based interface of MARTe with EPICS for real-time applications

International Nuclear Information System (INIS)

Yun, Sangwon; Neto, André C.; Park, Mikyung; Lee, Sangil; Park, Kaprai

2014-01-01

Highlights: • We implemented a shared memory based interface of MARTe with EPICS. • We implemented an EPICS module supporting device and driver support. • We implemented an example EPICS IOC and CSS OPI for evaluation. - Abstract: The Multithreaded Application Real-Time executor (MARTe) is a multi-platform C++ middleware designed for the implementation of real-time control systems. It currently supports the Linux, Linux + RTAI, VxWorks, Solaris and MS Windows platforms. In the fusion community MARTe is being used at JET, COMPASS, ISTTOK, FTU and RFX in fusion [1]. The Experimental Physics and Industrial Control System (EPICS), a standard framework for the control systems in KSTAR and ITER, is a set of software tools and applications which provide a software infrastructure for use in building distributed control systems to operate devices. For a MARTe based application to cooperate with an EPICS based application, an interface layer between MARTe and EPICS is required. To solve this issue, a number of interfacing solutions have been proposed and some of them have been implemented. Nevertheless, a new approach is required to mitigate the functional limitations of existing solutions and to improve their performance for real-time applications. This paper describes the design and implementation of a shared memory based interface between MARTe and EPICS

A shared memory based interface of MARTe with EPICS for real-time applications

Energy Technology Data Exchange (ETDEWEB)

Yun, Sangwon, E-mail: yunsw@nfri.re.kr [National Fusion Research Institute (NFRI), Gwahangno 169-148, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of); Neto, André C. [Associação EURATOM/IST, Instituto de Plasmas e Fusão Nuclear, Instituto Superior Técnico, Universidade Técnica de Lisboa, P-1049-001 Lisboa (Portugal); Park, Mikyung; Lee, Sangil; Park, Kaprai [National Fusion Research Institute (NFRI), Gwahangno 169-148, Yuseong-Gu, Daejeon 305-806 (Korea, Republic of)

2014-05-15

Highlights: • We implemented a shared memory based interface of MARTe with EPICS. • We implemented an EPICS module supporting device and driver support. • We implemented an example EPICS IOC and CSS OPI for evaluation. - Abstract: The Multithreaded Application Real-Time executor (MARTe) is a multi-platform C++ middleware designed for the implementation of real-time control systems. It currently supports the Linux, Linux + RTAI, VxWorks, Solaris and MS Windows platforms. In the fusion community MARTe is being used at JET, COMPASS, ISTTOK, FTU and RFX in fusion [1]. The Experimental Physics and Industrial Control System (EPICS), a standard framework for the control systems in KSTAR and ITER, is a set of software tools and applications which provide a software infrastructure for use in building distributed control systems to operate devices. For a MARTe based application to cooperate with an EPICS based application, an interface layer between MARTe and EPICS is required. To solve this issue, a number of interfacing solutions have been proposed and some of them have been implemented. Nevertheless, a new approach is required to mitigate the functional limitations of existing solutions and to improve their performance for real-time applications. This paper describes the design and implementation of a shared memory based interface between MARTe and EPICS.

Ferroelectric Thin Films Basic Properties and Device Physics for Memory Applications

CERN Document Server

Okuyama, Masanori

2005-01-01

Ferroelectric thin films continue to attract much attention due to their developing, diverse applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field.

Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications

KAUST Repository

Wang, Jer-Chyi

2016-11-23

Graphene nanodiscs (GNDs), functionalized using NH3 plasma, as charge trapping sites (CTSs) for non-volatile memory applications have been investigated in this study. The fabrication process relies on the patterning of Au nanoparticles (Au-NPs), whose thicknesses are tuned to adjust the GND density and size upon etching. A GND density as high as 8 × 1011 cm−2 and a diameter of approximately 20 nm are achieved. The functionalization of GNDs by NH3 plasma creates Nsingle bondH+ functional groups that act as CTSs, as observed by Raman and Fourier transform infrared spectroscopy. This inherently enhances the density of CTSs in the GNDs, as a result, the memory window becomes more than 2.4 V and remains stable after 104 operating cycles. The charge loss is less than 10% for a 10-year data retention testing, making this low-temperature process suitable for low-cost non-volatile memory applications on flexible substrates.

Germanium nanoparticles grown at different deposition times for memory device applications

International Nuclear Information System (INIS)

Mederos, M.; Mestanza, S.N.M.; Lang, R.; Doi, I.; Diniz, J.A.

2016-01-01

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

Germanium nanoparticles grown at different deposition times for memory device applications

Energy Technology Data Exchange (ETDEWEB)

Mederos, M., E-mail: melissa.mederos@gmail.com [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); Mestanza, S.N.M. [Federal University of ABC (UFABC), Rua Santa Adélia 166, Bangu, Santo André, CEP: 09210-170, São Paulo (Brazil); Lang, R. [Institute of Science and Technology, Federal University of São Paulo (UNIFESP), Rua Talim, 330, São José dos Campos, CEP: 12231-280, São Paulo (Brazil); Doi, I.; Diniz, J.A. [Center for Semiconductor Components and Nanotechnology (CCSNano), University of Campinas (Unicamp), Rua João Pandia Calógeras 90, Campinas, CEP: 13083-870, São Paulo (Brazil); School of Electrical and Computer Engineering, University of Campinas (Unicamp), Av. Albert Einstein 400, Campinas, CEP: 13083-852, São Paulo (Brazil)

2016-07-29

In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 μm of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. - Highlights: • Ge nanoparticles with high density and uniforms sizes were obtained by LPCVD. • Room-temperature size-dependent bands of photoluminescence were observed. • MOS capacitors with Ge nanoparticles embedded in the oxide were fabricated. • Ge nanoparticles are the main responsible for the memory properties in the devices. • Fowler-Nordheim tunneling is the conduction mechanism observed on the devices.

Threshold-voltage modulated phase change heterojunction for application of high density memory

International Nuclear Information System (INIS)

Yan, Baihan; Tong, Hao; Qian, Hang; Miao, Xiangshui

2015-01-01

Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current

Threshold-voltage modulated phase change heterojunction for application of high density memory

Science.gov (United States)

Yan, Baihan; Tong, Hao; Qian, Hang; Miao, Xiangshui

2015-09-01

Phase change random access memory is one of the most important candidates for the next generation non-volatile memory technology. However, the ability to reduce its memory size is compromised by the fundamental limitations inherent in the CMOS technology. While 0T1R configuration without any additional access transistor shows great advantages in improving the storage density, the leakage current and small operation window limit its application in large-scale arrays. In this work, phase change heterojunction based on GeTe and n-Si is fabricated to address those problems. The relationship between threshold voltage and doping concentration is investigated, and energy band diagrams and X-ray photoelectron spectroscopy measurements are provided to explain the results. The threshold voltage is modulated to provide a large operational window based on this relationship. The switching performance of the heterojunction is also tested, showing a good reverse characteristic, which could effectively decrease the leakage current. Furthermore, a reliable read-write-erase function is achieved during the tests. Phase change heterojunction is proposed for high-density memory, showing some notable advantages, such as modulated threshold voltage, large operational window, and low leakage current.

Pendant allyl crosslinking as a tunable shape memory actuator for vascular applications.

Science.gov (United States)

Boire, Timothy C; Gupta, Mukesh K; Zachman, Angela L; Lee, Sue Hyun; Balikov, Daniel A; Kim, Kwangho; Bellan, Leon M; Sung, Hak-Joon

2015-09-01

Thermo-responsive shape memory polymers (SMPs) can be programmed to fit into small-bore incisions and recover their functional shape upon deployment in the body. This property is of significant interest for developing the next generation of minimally-invasive medical devices. To be used in such applications, SMPs should exhibit adequate mechanical strengths that minimize adverse compliance mismatch-induced host responses (e.g. thrombosis, hyperplasia), be biodegradable, and demonstrate switch-like shape recovery near body temperature with favorable biocompatibility. Combinatorial approaches are essential in optimizing SMP material properties for a particular application. In this study, a new class of thermo-responsive SMPs with pendant, photocrosslinkable allyl groups, x%poly(ε-caprolactone)-co-y%(α-allyl carboxylate ε-caprolactone) (x%PCL-y%ACPCL), are created in a robust, facile manner with readily tunable material properties. Thermomechanical and shape memory properties can be drastically altered through subtle changes in allyl composition. Molecular weight and gel content can also be altered in this combinatorial format to fine-tune material properties. Materials exhibit highly elastic, switch-like shape recovery near 37°C. Endothelial compatibility is comparable to tissue culture polystyrene (TCPS) and 100%PCL in vitro and vascular compatibility is demonstrated in vivo in a murine model of hindlimb ischemia, indicating promising suitability for vascular applications. With the ongoing thrust to make surgeries minimally-invasive, it is prudent to develop new biomaterials that are highly compatible and effective in this workflow. Thermo-responsive shape memory polymers (SMPs) have great potential for minimally-invasive applications because SMP medical devices (e.g. stents, grafts) can fit into small-bore minimally-invasive surgical devices and recover their functional shape when deployed in the body. To realize their potential, it is imperative to devise

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

Science.gov (United States)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Hardware Compilation of Application-Specific Memory-Access Interconnect

DEFF Research Database (Denmark)

Venkataramani, Girish; Bjerregaard, Tobias; Chelcea, Tiberiu

2006-01-01

operations dependent on memory reads. More fundamental is that dependences between accesses may not be statically provable (e.g., if the specification language permits pointers), which introduces memory-consistency problems. Addressing these issues with static scheduling results in overly conservative...... enables specifications to include arbitrary memory references (e.g., pointers) and allows the memory system to incorporate features that might cause the latency of a memory access to vary dynamically. This results in raising the level of abstraction in the input specification, enabling faster design times...

Compact holographic memory and its application to optical pattern recognition

Science.gov (United States)

Chao, Tien-Hsin; Reyes, George F.; Zhou, Hanying

2001-03-01

JPL is developing a high-density, nonvolatile Compact Holographic Data Storage (CHDS) system to enable large- capacity, high-speed, low power consumption, and read/write of data for commercial and space applications. This CHDS system consists of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and high- speed. In this paper, recent technology progress in developing this CHDS at JPL will be presented. The recent applications of the CHDS to optical pattern recognition, as a high-density, high transfer rate memory bank will also be discussed.

An investigation of shape memory alloys as actuating elements in aerospace morphing applications

DEFF Research Database (Denmark)

Karagiannis, Dimitrios; Stamatelos, Dimtrios; Kappatos, Vasileios

2017-01-01

Two innovative actuating concepts for aerospace morphing applications, based on Shape Memory Alloys (SMAs), are proposed. The first concept investigates a composite plate incorporating embedded SMA wires. A Nonlinear Auto Regressive with eXogenous excitation (NARX) model is proposed for controlling...

Concept of dynamic memory in economics

Science.gov (United States)

Tarasova, Valentina V.; Tarasov, Vasily E.

2018-02-01

In this paper we discuss a concept of dynamic memory and an application of fractional calculus to describe the dynamic memory. The concept of memory is considered from the standpoint of economic models in the framework of continuous time approach based on fractional calculus. We also describe some general restrictions that can be imposed on the structure and properties of dynamic memory. These restrictions include the following three principles: (a) the principle of fading memory; (b) the principle of memory homogeneity on time (the principle of non-aging memory); (c) the principle of memory reversibility (the principle of memory recovery). Examples of different memory functions are suggested by using the fractional calculus. To illustrate an application of the concept of dynamic memory in economics we consider a generalization of the Harrod-Domar model, where the power-law memory is taken into account.

Multiferroic Memories

Directory of Open Access Journals (Sweden)

Amritendu Roy

2012-01-01

Full Text Available Multiferroism implies simultaneous presence of more than one ferroic characteristics such as coexistence of ferroelectric and magnetic ordering. This phenomenon has led to the development of various kinds of materials and conceptions of many novel applications such as development of a memory device utilizing the multifunctionality of the multiferroic materials leading to a multistate memory device with electrical writing and nondestructive magnetic reading operations. Though, interdependence of electrical- and magnetic-order parameters makes it difficult to accomplish the above and thus rendering the device to only two switchable states, recent research has shown that such problems can be circumvented by novel device designs such as formation of tunnel junction or by use of exchange bias. In this paper, we review the operational aspects of multiferroic memories as well as the materials used for these applications along with the designs that hold promise for the future memory devices.

Biodegradable Shape Memory Polymers in Medicine.

Science.gov (United States)

Peterson, Gregory I; Dobrynin, Andrey V; Becker, Matthew L

2017-11-01

Shape memory materials have emerged as an important class of materials in medicine due to their ability to change shape in response to a specific stimulus, enabling the simplification of medical procedures, use of minimally invasive techniques, and access to new treatment modalities. Shape memory polymers, in particular, are well suited for such applications given their excellent shape memory performance, tunable materials properties, minimal toxicity, and potential for biodegradation and resorption. This review provides an overview of biodegradable shape memory polymers that have been used in medical applications. The majority of biodegradable shape memory polymers are based on thermally responsive polyesters or polymers that contain hydrolyzable ester linkages. These materials have been targeted for use in applications pertaining to embolization, drug delivery, stents, tissue engineering, and wound closure. The development of biodegradable shape memory polymers with unique properties or responsiveness to novel stimuli has the potential to facilitate the optimization and development of new medical applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Application of nanomaterials in two-terminal resistive-switching memory devices

Directory of Open Access Journals (Sweden)

Jianyong Ouyang

2010-05-01

Full Text Available Nanometer materials have been attracting strong attention due to their interesting structure and properties. Many important practical applications have been demonstrated for nanometer materials based on their unique properties. This article provides a review on the fabrication, electrical characterization, and memory application of two-terminal resistive-switching devices using nanomaterials as the active components, including metal and semiconductor nanoparticles (NPs, nanotubes, nanowires, and graphenes. There are mainly two types of device architectures for the two-terminal devices with NPs. One has a triple-layer structure with a metal film sandwiched between two organic semiconductor layers, and the other has a single polymer film blended with NPs. These devices can be electrically switched between two states with significant different resistances, i.e. the ‘ON’ and ‘OFF’ states. These render the devices important application as two-terminal non-volatile memory devices. The electrical behavior of these devices can be affected by the materials in the active layer and the electrodes. Though the mechanism for the electrical switches has been in argument, it is generally believed that the resistive switches are related to charge storage on the NPs. Resistive switches were also observed on crossbars formed by nanotubes, nanowires, and graphene ribbons. The resistive switches are due to nanoelectromechanical behavior of the materials. The Coulombic interaction of transient charges on the nanomaterials affects the configurable gap of the crossbars, which results into significant change in current through the crossbars. These nanoelectromechanical devices can be used as fast-response and high-density memory devices as well. Dr. Jianyong Ouyang received his bachelor degree from the Tsinghua University in Beijing, China, and MSc from the Institute of Chemistry, Chinese Academy of Science. He received his PhD from the Institute for Molecular

Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

KAUST Repository

Ghoneim, Mohamed T.

2015-04-24

A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)-(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol-gel coating cycles required (i.e., more cost-effective), and, fabrication wise, is more suitable for further scaling of lateral dimensions to the nano-scale due to the larger feature size-to-depth aspect ratio (critical for ultra-high density non-volatile memory applications). Utilizing the inverse proportionality between substrate\\'s thickness and its flexibility, traditional PZT based FeRAM on silicon is transformed through a transfer-less manufacturable process into a flexible form that matches organic electronics\\' flexibility while preserving the superior performance of silicon CMOS electronics. Each memory cell in a FeRAM array consists of two main elements; a select/access transistor, and a storage ferroelectric capacitor. Flexible transistors on silicon have already been reported. In this work, we focus on the storage ferroelectric capacitors, and report, for the first time, its performance after transformation into a flexible version, and assess its key memory parameters while bent at 0.5 cm minimum bending radius.

A review of shape memory material’s applications in the offshore oil and gas industry

Science.gov (United States)

Patil, Devendra; Song, Gangbing

2017-09-01

The continuously increasing demand for oil and gas and the depleting number of new large reservoir discoveries have made it necessary for the oil and gas industry to investigate and design new, improved technologies that unlock new sources of energy and squeeze more from existing resources. Shape memory materials (SMM), with their remarkable properties such as the shape memory effect (SME), corrosion resistance, and superelasticity have shown great potential to meet these demands by significantly improving the functionality and durability of offshore systems. Shape memory alloy (SMA) and shape memory polymer (SMP) are two types of most commonly used SMM’s and are ideally suited for use over a range of robust engineering applications found within the oil and gas industry, such as deepwater actuators, valves, underwater connectors, seals, self-torqueing fasteners and sand management. The potential high strain and high force output of the SME of SMA can be harnessed to create a lightweight, solid state alternative to conventional hydraulic, pneumatic or motor based actuator systems. The phase transformation property enables the SMA to withstand erosive stresses, which is useful for minimizing the effect of erosion often experienced by downhole devices. The superelasticity of the SMA provides good energy dissipation, and can overcome the various defects and limitations suffered by conventional passive damping methods. The higher strain recovery during SME makes SMP ideal for developments of packers and sand management in downhole. The increasing number of SMM related research papers and patents from oil and gas industry indicate the growing research interest of the industry to implement SMM in offshore applications. This paper reviews the recent developments and applications of SMM in the offshore oil and gas industry.

C-RAM: breaking mobile device memory barriers using the cloud

OpenAIRE

Pamboris, A; Pietzuch, P

2015-01-01

?Mobile applications are constrained by the available memory of mobile devices. We present C-RAM, a system that uses cloud-based memory to extend the memory of mobile devices. It splits application state and its associated computation between a mobile device and a cloud node to allow applications to consume more memory, while minimising the performance impact. C-RAM thus enables developers to realise new applications or port legacy desktop applications with a large memory footprint to mobile ...

Space radiation evaluation of 16Mbit DRAMs for mass memory applications

International Nuclear Information System (INIS)

Calvel, P.; Lamothe, P.; Barillot, C.; Ecoffet, R.; Duzellier, S.; Stassinopoulos, E.G.

1994-01-01

In the frame of Mass Memory Applications for space missions, 16 Mbit DRAM from IBM and TEXAS INSTRUMENTS have been evaluated to space radiation, by the CECIL heavy ions testing coordination group. This paper presents heavy ions, protons and total dose data results for 16 Mbit DRAMs from IBM and TEXAS INSTRUMENTS, including a 'built-in ECC' DRAM. Single Event Phenomena rate are calculated for low earth orbits

Resistive switching characteristics of solution-processed organic-inorganic blended films for flexible memory applications

Science.gov (United States)

Baek, Il-Jin; Cho, Won-Ju

2018-02-01

We developed a hybrid organic-inorganic resistive random access memory (ReRAM) device that uses a solution-process to overcome the disadvantages of organic and inorganic materials for flexible memory applications. The drawbacks of organic and inorganic materials are a poor electrical characteristics and a lack of flexibility, respectively. We fabricated a hybrid organic-inorganic switching layer of ReRAM by blending HfOx or AlOx solution with PMMA solution and investigated the resistive switching behaviour in Ti/PMMA/Pt, Ti/PMMA-HfOx/Pt and Ti/PMMA-AlOx/Pt structures. It is found that PMMA-HfOx or PMMA-AlOx hybrid switching layer has a larger memory window, more stable durability and retention characteristics, and a better set/reset voltage distribution than PMMA layer. Further, it is confirmed that the flexibility of the PMMA-HfOx and PMMA-AlOx blended films was almost similar to that of the organic PMMA film. Thus, the solution-processed organic-inorganic blended films are considered a promising material for a non-volatile memory device on a flexible or wearable electronic system.

Thermally responsive polymer systems for self-healing, reversible adhesion and shape memory applications

Science.gov (United States)

Luo, Xiaofan

Responsive polymers are "smart" materials that are capable of performing prescribed, dynamic functions under an applied stimulus. In this dissertation, we explore several novel design strategies to develop thermally responsive polymers and polymer composites for self-healing, reversible adhesion and shape memory applications. In the first case described in Chapters 2 and 3, a thermally triggered self-healing material was prepared by blending a high-temperature epoxy resin with a thermoplastic polymer, poly(epsilon-caprolactone) (PCL). The initially miscible system undergoes polymerization induced phase separation (PIPS) during the curing of epoxy and yields a variety of compositionally dependent morphologies. At a particular PCL loading, the cured blend displays a "bricks-and-mortar" morphology in which epoxy exists as interconnected spheres ("bricks") within a continuous PCL matrix ("mortar"). A heat induced "bleeding" phenomenon was observed in the form of spontaneous wetting of all free surfaces by the molten PCL, and is attributed to the volumetric thermal expansion of PCL above its melting point in excess of epoxy brick expansion, which we term differential expansive bleeding (DEB). This DEB is capable of healing damage such as cracks. In controlled self-healing experiments, heating of a cracked specimen led to PCL bleeding from the bulk that yields a liquid layer bridging the crack gap. Upon cooling, a "scar" composed of PCL crystals was formed at the site of the crack, restoring a significant portion of mechanical strength. We further utilized DEB to enable strong and thermally-reversible adhesion of the material to itself and to metallic substrates, without any requirement for macroscopic softening or flow. After that, Chapters 4--6 present a novel composite strategy for the design and fabrication of shape memory polymer composites. The basic approach involves physically combining two or more functional components into an interpenetrating fiber

Task-FIFO co-scheduling of streaming applications on MPSoCs with predictable memory hierarchy

NARCIS (Netherlands)

Tang, Q.; Basten, A.A.; Geilen, M.C.W.; Stuijk, S.; Wei, Ji-Bo

This article studies the scheduling of real-time streaming applications on multiprocessor systems-on-chips with predictable memory hierarchy. An iteration-based task-FIFO co-scheduling framework is proposed for this problem. We obtain FIFO size distributions using Pareto space searching, based on

Task-FIFO co-scheduling of streaming applications on MPSoCs with predictable memory hierarchy

NARCIS (Netherlands)

Tang, Q.; Basten, T.; Geilen, M.; Stuijk, S.; Wei, J.B.

2017-01-01

This article studies the scheduling of real-time streaming applications on multiprocessor systems-on-chips with predictable memory hierarchy. An iteration-based task-FIFO co-scheduling framework is proposed for this problem. We obtain FIFO size distributions using Pareto space searching, based on

Time Series with Long Memory

OpenAIRE

西埜, 晴久

2004-01-01

The paper investigates an application of long-memory processes to economic time series. We show properties of long-memory processes, which are motivated to model a long-memory phenomenon in economic time series. An FARIMA model is described as an example of long-memory model in statistical terms. The paper explains basic limit theorems and estimation methods for long-memory processes in order to apply long-memory models to economic time series.

Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications

Institute of Scientific and Technical Information of China (English)

无

2010-01-01

In this work,an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced.The relationship between binary alloy’s work function and its composition was discussed theoretically.A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering.The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.

Mosaic: An Application-Transparent Hardware-Software Cooperative Memory Manager for GPUs

OpenAIRE

Ausavarungnirun, Rachata; Landgraf, Joshua; Miller, Vance; Ghose, Saugata; Gandhi, Jayneel; Rossbach, Christopher J.; Mutlu, Onur

2018-01-01

Modern GPUs face a trade-off on how the page size used for memory management affects address translation and demand paging. Support for multiple page sizes can help relax the page size trade-off so that address translation and demand paging optimizations work together synergistically. However, existing page coalescing and splintering policies require costly base page migrations that undermine the benefits multiple page sizes provide. In this paper, we observe that GPGPU applications present a...

A memory module for experimental data handling

Science.gov (United States)

De Blois, J.

1985-02-01

A compact CAMAC memory module for experimental data handling was developed to eliminate the need of direct memory access in computer controlled measurements. When using autonomous controllers it also makes measurements more independent of the program and enlarges the available space for programs in the memory of the micro-computer. The memory module has three modes of operation: an increment-, a list- and a fifo mode. This is achieved by connecting the main parts, being: the memory (MEM), the fifo buffer (FIFO), the address buffer (BUF), two counters (AUX and ADDR) and a readout register (ROR), by an internal 24-bit databus. The time needed for databus operations is 1 μs, for measuring cycles as well as for CAMAC cycles. The FIFO provides temporary data storage during CAMAC cycles and separates the memory part from the application part. The memory is variable from 1 to 64K (24 bits) by using different types of memory chips. The application part, which forms 1/3 of the module, will be specially designed for each application and is added to the memory chian internal connector. The memory unit will be used in Mössbauer experiments and in thermal neutron scattering experiments.

Application of graphene oxide-poly (vinyl alcohol) polymer nanocomposite for memory devices

Science.gov (United States)

Kaushal, Jyoti; Kaur, Ravneet; Sharma, Jadab; Tripathi, S. K.

2018-05-01

Significant attention has been gained by polymer nanocomposites because of their possible demands in future electronic memory devices. In the present work, device based on Graphene Oxide (GO) and polyvinyl alcohol (PVA) has been made and examined for the memory device application. The prepared Graphene oxide (GO) and GO-PVA nanocomposite (NC) has been characterized by X-ray Diffraction (XRD). GO nanosheets show the diffraction peak at 2θ = 11.60° and the interlayer spacing of 0.761 nm. The XRD of GO-PVA NC shows the diffraction peak at 2θ =18.56°. The fabricated device shows bipolar switching behavior having ON/OFF current ratio ˜102. The Write-Read-Erase-Read (WRER) cycles test shows that the Al/GO-PVA/Ag device has good stability and repeatability.

Shape memory alloys

International Nuclear Information System (INIS)

Kaszuwara, W.

2004-01-01

Shape memory alloys (SMA), when deformed, have the ability of returning, in certain circumstances, to their initial shape. Deformations related to this phenomenon are for polycrystals 1-8% and up to 15% for monocrystals. The deformation energy is in the range of 10 6 - 10 7 J/m 3 . The deformation is caused by martensitic transformation in the material. Shape memory alloys exhibit one directional or two directional shape memory effect as well as pseudoelastic effect. Shape change is activated by temperature change, which limits working frequency of SMA to 10 2 Hz. Other group of alloys exhibit magnetic shape memory effect. In these alloys martensitic transformation is triggered by magnetic field, thus their working frequency can be higher. Composites containing shape memory alloys can also be used as shape memory materials (applied in vibration damping devices). Another group of composite materials is called heterostructures, in which SMA alloys are incorporated in a form of thin layers The heterostructures can be used as microactuators in microelectromechanical systems (MEMS). Basic SMA comprise: Ni-Ti, Cu (Cu-Zn,Cu-Al, Cu-Sn) and Fe (Fe-Mn, Fe-Cr-Ni) alloys. Shape memory alloys find applications in such areas: automatics, safety and medical devices and many domestic appliances. Currently the most important appears to be research on magnetic shape memory materials and high temperature SMA. Vital from application point of view are composite materials especially those containing several intelligent materials. (author)

pH Memory Effects of Tunable Block Copolymer Photonic Gels and Their Applications

Science.gov (United States)

Kang, Youngjong; Thomas, Edwin L.

2007-03-01

Materials with hysteresis, showing a bistable state to the external stimuli, have been widely investigated due to their potential applications. For example, they could be used as memory devices or optical switches when they have magnetic or optical hysteresis response to the external stimuli. Here we report pH tunable photonic gels which are spontaneously assembled from block copolymers. The general idea of this research is based on the selective swelling of block copolymer lamellar mesogels, where the solubility of one block is responsive to the change of pH. In this system, the domain spacing of the lamellar is varied with the extent of swelling. As a model system, we used protonated polystyrene-b-poly(2-vinly pyridine) (PS-b-P2VP) block copolymers forming lamellar structures. The photonic gel films prepared from protonated PS-b-P2VP show a strong reflectance in aqueous solution and the band position was varied with pH. Interestingly, a very strong optical hysteresis was observed while the reflection band of photonic gels was tuned by changing pH. We anticipate that pH tunable photonic gels with hysteresis can be applicable to novel applications such as a component of memory devices, photonic switches or drug delivery vehicles.

Neuron-inspired flexible memristive device on silicon (100)

KAUST Repository

Ghoneim, Mohamed T.

2017-06-18

Comprehensive understanding of the world\\'s most energy efficient powerful computer, the human brain, is an elusive scientific issue. Still, already gained knowledge indicates memristors can be used as a building block to model the brain. At the same time, brain cortex is folded allowing trillions of neurons to be integrated in a compact volume. Therefore, we report flexible aluminium oxide based memristive devices fabricated and then derived from widely used bulk mono-crystalline silicon (100). We use complementary metal oxide semiconductor based processes to layout the foundation for ultra large scale integration (ULSI) of such memory devices to advance the task of comprehending a physical model of human brain.

Efficiency of working memory: Theoretical concept and practical application

Directory of Open Access Journals (Sweden)

Lalović Dejan

2008-01-01

Full Text Available Efficiency of working memory is the concept which connects psychology of memory with different fields of cognitive, differential and applied psychology. In this paper, the history of interest for the assessment of the capacity of short-term memory is presented in brief, as well as the different methods used nowadays to assess the individual differences in the efficiency of working memory. What follows is the consideration of studies that indicate the existence of significant links between the efficiency of working memory and general intelligence, the ability of reasoning, personality variables, as well as some socio-psychological phenomena. Special emphasis is placed on the links between the efficiency of working memory and certain aspects of pedagogical practice: acquiring the skill of reading, learning arithmetic and shedding light on the cause of general failure in learning at school. What is also provided are the suggestions that, in the light of knowledge about the development and limitations of working memory at school age, can be useful for teaching practice.

Shape memory polymer cellular solid design for medical applications

International Nuclear Information System (INIS)

De Nardo, L; Bertoldi, S; Tanzi, M C; Farè, S; Haugen, H J

2011-01-01

Shape memory polymers (SMPs) are an emerging class of active materials whose response can be easily tailored via modifications of the molecular parameters and optimization of the transformation processes. In this work, we originally demonstrated that a correct coupling of polymer transformation processes (co-extrusion with chemical blowing agents, salt co-extrusion/particulate leaching, solvent casting/particulate leaching) and SMPs allows one to obtain porous structures with a broad spectrum of morphological properties resulting in tunable thermo-mechanical and shape recovery properties. Such a wide range of properties could fulfil the specifications of medical applications in which the use of SMP-based foams can be envisaged

Configurable memory system and method for providing atomic counting operations in a memory device

Science.gov (United States)

Bellofatto, Ralph E.; Gara, Alan G.; Giampapa, Mark E.; Ohmacht, Martin

2010-09-14

A memory system and method for providing atomic memory-based counter operations to operating systems and applications that make most efficient use of counter-backing memory and virtual and physical address space, while simplifying operating system memory management, and enabling the counter-backing memory to be used for purposes other than counter-backing storage when desired. The encoding and address decoding enabled by the invention provides all this functionality through a combination of software and hardware.

Reprint of: Pendant allyl crosslinking as a tunable shape memory actuator for vascular applications.

Science.gov (United States)

Boire, Timothy C; Gupta, Mukesh K; Zachman, Angela L; Lee, Sue Hyun; Balikov, Daniel A; Kim, Kwangho; Bellan, Leon M; Sung, Hak-Joon

2016-04-01

Thermo-responsive shape memory polymers (SMPs) can be programmed to fit into small-bore incisions and recover their functional shape upon deployment in the body. This property is of significant interest for developing the next generation of minimally-invasive medical devices. To be used in such applications, SMPs should exhibit adequate mechanical strengths that minimize adverse compliance mismatch-induced host responses (e.g. thrombosis, hyperplasia), be biodegradable, and demonstrate switch-like shape recovery near body temperature with favorable biocompatibility. Combinatorial approaches are essential in optimizing SMP material properties for a particular application. In this study, a new class of thermo-responsive SMPs with pendant, photocrosslinkable allyl groups, x%poly(ε-caprolactone)-co-y%(α-allyl carboxylate ε-caprolactone) (x%PCL-y%ACPCL), are created in a robust, facile manner with readily tunable material properties. Thermomechanical and shape memory properties can be drastically altered through subtle changes in allyl composition. Molecular weight and gel content can also be altered in this combinatorial format to fine-tune material properties. Materials exhibit highly elastic, switch-like shape recovery near 37 °C. Endothelial compatibility is comparable to tissue culture polystyrene (TCPS) and 100%PCL in vitro and vascular compatibility is demonstrated in vivo in a murine model of hindlimb ischemia, indicating promising suitability for vascular applications. With the ongoing thrust to make surgeries minimally-invasive, it is prudent to develop new biomaterials that are highly compatible and effective in this workflow. Thermo-responsive shape memory polymers (SMPs) have great potential for minimally-invasive applications because SMP medical devices (e.g. stents, grafts) can fit into small-bore minimally-invasive surgical devices and recover their functional shape when deployed in the body. To realize their potential, it is imperative to devise

Efficiency of working memory: Theoretical concept and practical application

OpenAIRE

Lalović Dejan

2008-01-01

Efficiency of working memory is the concept which connects psychology of memory with different fields of cognitive, differential and applied psychology. In this paper, the history of interest for the assessment of the capacity of short-term memory is presented in brief, as well as the different methods used nowadays to assess the individual differences in the efficiency of working memory. What follows is the consideration of studies that indicate the existence of significant links between the...

Vanadium doped Sb2Te3 material with modified crystallization mechanism for phase-change memory application

International Nuclear Information System (INIS)

Ji, Xinglong; Zheng, Yonghui; Zhou, Wangyang; Wu, Liangcai; Cao, Liangliang; Zhu, Min; Rao, Feng; Song, Zhitang; Feng, Songlin

2015-01-01

In this paper, V 0.21 Sb 2 Te 3 (VST) has been proposed for phase-change memory applications. With vanadium incorporating, VST has better thermal stability than Sb 2 Te 3 and can maintain in amorphous phase at room temperature. Two resistance steps were observed in temperature dependent resistance measurements. By real-time observing the temperature dependent lattice structure evolution, VST presents as a homogenous phase throughout the whole thermal process. Combining Hall measurement and transmission electron microscopy results, we can ascribe the two resistance steps to the unique crystallization mechanism of VST material. Then, the amorphous thermal stability enhancement can also be rooted in the suppression of the fast growth crystallization mechanism. Furthermore, the applicability of VST is demonstrated by resistance-voltage measurement, and the phase transition of VST can be triggered by a 15 ns electric pulse. In addition, endurance up to 2.7×10 4 cycles makes VST a promising candidate for phase-change memory applications

A memory module for experimental data handling

International Nuclear Information System (INIS)

Blois, J. de

1985-01-01

A compact CAMAC memory module for experimental data handling was developed to eliminate the need of direct memory access in computer controlled measurements. When using autonomous controllers it also makes measurements more independent of the program and enlarges the available space for programs in the memory of the micro-computer. The memory module has three modes of operation: an increment-, a list- and a fifo mode. This is achieved by connecting the main parts, being: the memory (MEM), the fifo buffer (FIFO), the address buffer (BUF), two counters (AUX and ADDR) and a readout register (ROR), by an internal 24-bit databus. The time needed for databus operations is 1 μs, for measuring cycles as well as for CAMAC cycles. The FIFO provides temporary data storage during CAMAC cycles and separates the memory part from the application part. The memory is variable from 1 to 64K (24 bits) by using different types of memory chips. The application part, which forms 1/3 of the module, will be specially designed for each application and is added to the memory by an internal connector. The memory unit will be used in Moessbauer experiments and in thermal neutron scattering experiments. (orig.)

Scientific developments of liquid crystal-based optical memory: a review

Science.gov (United States)

Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

16-bit error detection and correction (EDAC) controller design using FPGA for critical memory applications

International Nuclear Information System (INIS)

Misra, M.K.; Sridhar, N.; Krishnakumar, B.; Ilango Sambasivan, S.

2002-01-01

Full text: Complex electronic systems require the utmost reliability, especially when the storage and retrieval of critical data demands faultless operation, the system designer must strive for the highest reliability possible. Extra effort must be expended to achieve this reliability. Fortunately, not all systems must operate with these ultra reliability requirements. The majority of systems operate in an area where system failure is not hazardous. But the applications like nuclear reactors, medical and avionics are the areas where system failure may prove to have harsh consequences. High-density memories generate errors in their stored data due to external disturbances like power supply surges, system noise, natural radiation etc. These errors are called soft errors or transient errors, since they don't cause permanent damage to the memory cell. Hard errors may also occur on system memory boards. These hard errors occur if one RAM component or RAM cell fails and is stuck at either 0 or 1. Although less frequent, hard errors may cause a complete system failure. These are the major problems associated with memories

Application of complex programmable logic devices in memory radiation effects test system

International Nuclear Information System (INIS)

Li Yonghong; He Chaohui; Yang Hailiang; He Baoping

2005-01-01

The application of the complex programmable logic device (CPLD) in electronics is emphatically discussed. The method of using software MAX + plus II and CPLD are introduced. A new test system for memory radiation effects is established by using CPLD devices-EPM7128C84-15. The old test system's function are realized and, moreover, a number of small scale integrated circuits are reduced and the test system's reliability is improved. (authors)

Light-erasable embedded charge-trapping memory based on MoS2 for system-on-panel applications

Science.gov (United States)

He, Long-Fei; Zhu, Hao; Xu, Jing; Liu, Hao; Nie, Xin-Ran; Chen, Lin; Sun, Qing-Qing; Xia, Yang; Wei Zhang, David

2017-11-01

The continuous scaling and challenges in device integrations in modern portable electronic products have aroused many scientific interests, and a great deal of effort has been made in seeking solutions towards a more microminiaturized package assembled with smaller and more powerful components. In this study, an embedded light-erasable charge-trapping memory with a high-k dielectric stack (Al2O3/HfO2/Al2O3) and an atomically thin MoS2 channel has been fabricated and fully characterized. The memory exhibits a sufficient memory window, fast programming and erasing (P/E) speed, and high On/Off current ratio up to 107. Less than 25% memory window degradation is observed after projected 10-year retention, and the device functions perfectly after 8000 P/E operation cycles. Furthermore, the programmed device can be fully erased by incident light without electrical assistance. Such excellent memory performance originates from the intrinsic properties of two-dimensional (2D) MoS2 and the engineered back-gate dielectric stack. Our integration of 2D semiconductors in the infrastructure of light-erasable charge-trapping memory is very promising for future system-on-panel applications like storage of metadata and flexible imaging arrays.

From silicon to organic nanoparticle memory devices.

Science.gov (United States)

Tsoukalas, D

2009-10-28

After introducing the operational principle of nanoparticle memory devices, their current status in silicon technology is briefly presented in this work. The discussion then focuses on hybrid technologies, where silicon and organic materials have been combined together in a nanoparticle memory device, and finally concludes with the recent development of organic nanoparticle memories. The review is focused on the nanoparticle memory concept as an extension of the current flash memory device. Organic nanoparticle memories are at a very early stage of research and have not yet found applications. When this happens, it is expected that they will not directly compete with mature silicon technology but will find their own areas of application.

Executive and memory correlates of age-related differences in wayfinding performances using a virtual reality application.

Science.gov (United States)

Taillade, Mathieu; Sauzéon, Hélène; Dejos, Marie; Pala, Prashant Arvind; Larrue, Florian; Wallet, Grégory; Gross, Christian; N'Kaoua, Bernard

2013-01-01

The aim of this study was to evaluate in large-scale spaces wayfinding and spatial learning difficulties for older adults in relation to the executive and memory decline associated with aging. We compared virtual reality (VR)-based wayfinding and spatial memory performances between young and older adults. Wayfinding and spatial memory performances were correlated with classical measures of executive and visuo-spatial memory functions, but also with self-reported estimates of wayfinding difficulties. We obtained a significant effect of age on wayfinding performances but not on spatial memory performances. The overall correlations showed significant correlations between the wayfinding performances and the classical measures of both executive and visuo-spatial memory, but only when the age factor was not partialled out. Also, older adults underestimated their wayfinding difficulties. A significant relationship between the wayfinding performances and self-reported wayfinding difficulty estimates is found, but only when the age effect was partialled out. These results show that, even when older adults have an equivalent spatial knowledge to young adults, they had greater difficulties with the wayfinding task, supporting an executive decline view in age-related wayfinding difficulties. However, the correlation results are in favor of both the memory and executive decline views as mediators of age-related differences in wayfinding performances. This is discussed in terms of the relationships between memory and executive functioning in wayfinding task orchestration. Our results also favor the use of objective assessments of everyday navigation difficulties in virtual applications, instead of self-reported questionnaires, since older adults showed difficulties in estimating their everyday wayfinding problems.

[Ecological memory and its potential applications in ecology: a review].

Science.gov (United States)

Sun, Zhong-yu; Ren, Hai

2011-03-01

Ecological memory (EM) is defined as the capability of the past states or experiences of a community to influence the present or future ecological responses of the community. As a relatively new concept, EM has received considerable attention in the study of ecosystem structure and function, such as community succession, ecological restoration, biological invasion, and natural resource management. This review summarized the definition, components, and categories of EM, and discussed the possible mechanisms and affecting factors of EM. Also, the potential applications of EM were proposed, in order to further understand the mechanisms of community succession and to guide ecological restoration.

One bipolar transistor selector - One resistive random access memory device for cross bar memory array

Science.gov (United States)

Aluguri, R.; Kumar, D.; Simanjuntak, F. M.; Tseng, T.-Y.

2017-09-01

A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

Functional memory metals

International Nuclear Information System (INIS)

Dunne, D.P.

2000-01-01

The field of shape memory phenomena in metals and alloys has developed in a sporadic fashion from a scientific curiosity to a vigorously growing niche industry, over a period close to a full working lifetime. Memory metal research and development is replete with scientist and engineer 'true believers', who can finally feel content that their longstanding confidence in the potential of these unusual functional materials has not been misplaced. This paper reviews the current range of medical and non-medical systems and devices which are based on memory metals and attempts to predict trends in applications over the next decade. The market is dominated by Ni Ti alloys which have proved to exhibit the best and most reproducible properties for application in a wide range of medical and non-medical devices

Self-organized titanium oxide nano-channels for resistive memory application

Energy Technology Data Exchange (ETDEWEB)

Barman, A.; Saini, C. P.; Dhar, S.; Kanjilal, A., E-mail: aloke.kanjilal@snu.edu.in [Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201 314 (India); Sarkar, P. [Department of Physics, National Institute of Technology, Silchar, Assam 788 010 (India); Satpati, B.; Bhattacharyya, S. R. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700 064 (India); Kabiraj, D.; Kanjilal, D. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)

2015-12-14

Towards developing next generation scalable TiO{sub 2}-based resistive switching (RS) memory devices, the efficacy of 50 keV Ar{sup +}-ion irradiation to achieve self-organized nano-channel based structures at a threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} at ambient temperature is presented. Although x-ray diffraction results suggest the amorphization of as-grown TiO{sub 2} layers, detailed transmission electron microscopy study reveals fluence-dependent evolution of voids and eventual formation of self-organized nano-channels between them. Moreover, gradual increase of TiO/Ti{sub 2}O{sub 3} in the near surface region, as monitored by x-ray photoelectron spectroscopy, establishes the upsurge in oxygen deficient centers. The impact of structural and chemical modification on local RS behavior has also been investigated by current-voltage measurements in conductive atomic force microscopy, while memory application is manifested by fabricating Pt/TiO{sub 2}/Pt/Ti/SiO{sub 2}/Si devices. Finally, the underlying mechanism of our experimental results has been analyzed and discussed in the light of oxygen vacancy migration through nano-channels.

Thermodynamic Model of Spatial Memory

Science.gov (United States)

Kaufman, Miron; Allen, P.

1998-03-01

We develop and test a thermodynamic model of spatial memory. Our model is an application of statistical thermodynamics to cognitive science. It is related to applications of the statistical mechanics framework in parallel distributed processes research. Our macroscopic model allows us to evaluate an entropy associated with spatial memory tasks. We find that older adults exhibit higher levels of entropy than younger adults. Thurstone's Law of Categorical Judgment, according to which the discriminal processes along the psychological continuum produced by presentations of a single stimulus are normally distributed, is explained by using a Hooke spring model of spatial memory. We have also analyzed a nonlinear modification of the ideal spring model of spatial memory. This work is supported by NIH/NIA grant AG09282-06.

Neural correlates of olfactory and visual memory performance in 3D-simulated mazes after intranasal insulin application.

Science.gov (United States)

Brünner, Yvonne F; Rodriguez-Raecke, Rea; Mutic, Smiljana; Benedict, Christian; Freiherr, Jessica

2016-10-01

This fMRI study intended to establish 3D-simulated mazes with olfactory and visual cues and examine the effect of intranasally applied insulin on memory performance in healthy subjects. The effect of insulin on hippocampus-dependent brain activation was explored using a double-blind and placebo-controlled design. Following intranasal administration of either insulin (40IU) or placebo, 16 male subjects participated in two experimental MRI sessions with olfactory and visual mazes. Each maze included two separate runs. The first was an encoding maze during which subjects learned eight olfactory or eight visual cues at different target locations. The second was a recall maze during which subjects were asked to remember the target cues at spatial locations. For eleven included subjects in the fMRI analysis we were able to validate brain activation for odor perception and visuospatial tasks. However, we did not observe an enhancement of declarative memory performance in our behavioral data or hippocampal activity in response to insulin application in the fMRI analysis. It is therefore possible that intranasal insulin application is sensitive to the methodological variations e.g. timing of task execution and dose of application. Findings from this study suggest that our method of 3D-simulated mazes is feasible for studying neural correlates of olfactory and visual memory performance. Copyright © 2016 Elsevier Inc. All rights reserved.

Artificial intelligence applications of fast optical memory access

Science.gov (United States)

Henshaw, P. D.; Todtenkopf, A. B.

The operating principles and performance of rapid laser beam-steering (LBS) techniques are reviewed and illustrated with diagrams; their applicability to fast optical-memory (disk) access is evaluated; and the implications of fast access for the design of expert systems are discussed. LBS methods examined include analog deflection (source motion, wavefront tilt, and phased arrays), digital deflection (polarization modulation, reflectivity modulation, interferometric switching, and waveguide deflection), and photorefractive LBS. The disk-access problem is considered, and typical LBS requirements are listed as 38,000 beam positions, rotational latency 25 ms, one-sector rotation time 1.5 ms, and intersector space 87 microsec. The value of rapid access for increasing the power of expert systems (by permitting better organization of blocks of information) is illustrated by summarizing the learning process of the MVP-FORTH system (Park, 1983).

Preparation and characterization of Sb2Se3 devices for memory applications

Science.gov (United States)

Shylashree, N.; Uma B., V.; Dhanush, S.; Abachi, Sagar; Nisarga, A.; Aashith, K.; Sangeetha B., G.

2018-05-01

In this paper, A phase change material of Sb2Se3 was proposed for non volatile memory application. The thin film device preparation and characterization were carried out. The deposition method used was vapor evaporation technique and a thickness of 180nm was deposited. The switching between the SET and RESET state is shown by the I-V characterization. The change of phase was studied using R-V characterization. Different fundamental modes were also identified using Raman spectroscopy.

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Science.gov (United States)

Chen, Ying-Chen; Lin, Chih-Yang; Huang, Hui-Chun; Kim, Sungjun; Fowler, Burt; Chang, Yao-Feng; Wu, Xiaohan; Xu, Gaobo; Chang, Ting-Chang; Lee, Jack C.

2018-02-01

Sneak path current is a severe hindrance for the application of high-density resistive random-access memory (RRAM) array designs. In this work, we demonstrate nonlinear (NL) resistive switching characteristics of a HfO x /SiO x -based stacking structure as a realization for selector-less RRAM devices. The NL characteristic was obtained and designed by optimizing the internal filament location with a low effective dielectric constant in the HfO x /SiO x structure. The stacking HfO x /SiO x -based RRAM device as the one-resistor-only memory cell is applicable without needing an additional selector device to solve the sneak path issue with a switching voltage of ~1 V, which is desirable for low-power operating in built-in nonlinearity crossbar array configurations.

Mild cognitive impairment: applicability of research criteria in a memory clinic and characterization of cognitive profile.

Science.gov (United States)

Alladi, Suvarna; Arnold, Robert; Mitchell, Joanna; Nestor, Peter J; Hodges, John R

2006-04-01

We explored the applicability of recently proposed research criteria for mild cognitive impairment (MCI) in a memory clinic and changes in case definition related to which memory tests are used and the status of general cognitive function in MCI. A total of 166 consecutive GP referrals to the Cambridge Memory Clinic underwent comprehensive neuropsychological and psychiatric evaluation. Of 166 cases, 42 were excluded (significant depression 8, established dementia 29 and other disorders 5). Of 124 non-demented, non-depressed patients, 72 fulfilled Petersen's criteria for amnestic MCI based upon verbal memory performance [the Rey Auditory Verbal Learning Test (RAVLT)] and 90 met criteria if performance on verbal and/or non-verbal memory tests [the Rey figure recall or the Paired Associates Learning test (PAL)] was considered. Of the 90 broadly defined MCI cases, only 25 had pure amnesia: other subtle semantic and/or attention deficits were typically present. A further 12 were classed as non-amnestic MCI and 22 as 'worried well'. Definition of MCI varies considerably dependent upon the tests used for case definition. The majority have other cognitive deficits despite normal performance on the Mini-mental State Examination (MMSE) and intact activities of daily living (ADL) and fit within multi-domain MCI. Pure amnesic MCI is rare.

Testing of modern semiconductor memory structures

NARCIS (Netherlands)

Gaydadjiev, G.N.

2007-01-01

In this thesis, we study the problem of faults in modern semiconductor memory structures and their tests. According to the 2005 ITRS, the systems on chip (SoCs) are moving from logic and memory balanced chips to more memory dominated devices in order to cope with the increasing application

Free form CMOS electronics: Physically flexible and stretchable

KAUST Repository

Hussain, Muhammad Mustafa

2015-12-07

Free form (physically flexible and stretchable) electronics can be used for applications which are unexplored today due to the rigid and brittle nature of the state-of-the-art electronics. Therefore, we show integration strategy to rationally design materials, processes and devices to transform advanced complementary metal oxide semiconductor (CMOS) electronics into flexible and stretchable one while retaining their high performance, energy efficiency, ultra-large-scale-integration (ULSI) density, reliability and performance over cost benefit to expand its applications for wearable, implantable and Internet-of-Everything electronics.

Applications of Shape Memory Alloys for Neurology and Neuromuscular Rehabilitation

Directory of Open Access Journals (Sweden)

Simone Pittaccio

2015-05-01

Full Text Available Shape memory alloys (SMAs are a very promising class of metallic materials that display interesting nonlinear properties, such as pseudoelasticity (PE, shape memory effect (SME and damping capacity, due to high mechanical hysteresis and internal friction. Our group has applied SMA in the field of neuromuscular rehabilitation, designing some new devices based on the mentioned SMA properties: in particular, a new type of orthosis for spastic limb repositioning, which allows residual voluntary movement of the impaired limb and has no predetermined final target position, but follows and supports muscular elongation in a dynamic and compliant way. Considering patients in the sub-acute phase after a neurological lesion, and possibly bedridden, the paper presents a mobiliser for the ankle joint, which is designed exploiting the SME to provide passive exercise to the paretic lower limb. Two different SMA-based applications in the field of neuroscience are then presented, a guide and a limb mobiliser specially designed to be compatible with diagnostic instrumentations that impose rigid constraints in terms of electromagnetic compatibility and noise distortion. Finally, the paper discusses possible uses of these materials in the treatment of movement disorders, such as dystonia or hyperkinesia, where their dynamic characteristics can be advantageous.

Music application alleviates short-term memory impairments through increasing cell proliferation in the hippocampus of valproic acid-induced autistic rat pups.

Science.gov (United States)

Lee, Sung-Min; Kim, Bo-Kyun; Kim, Tae-Woon; Ji, Eun-Sang; Choi, Hyun-Hee

2016-06-01

Autism is a neurodevelopmental disorder and this disorder shows impairment in reciprocal social interactions, deficits in communication, and restrictive and repetitive patterns of behaviors and interests. The effect of music on short-term memory in the view of cell proliferation in the hippocampus was evaluated using valproic acid-induced autistic rat pups. Animal model of autism was made by subcutaneous injection of 400-mg/kg valproic acid into the rat pups on the postnatal day 14. The rat pups in the music-applied groups were exposed to the 65-dB comfortable classic music for 1 hr once a day, starting postnatal day 15 and continued until postnatal day 28. In the present results, short-term memory was deteriorated by autism induction. The numbers of 5-bromo-2'-deoxyridine (BrdU)-positive, Ki-67-positive, and doublecortin (DCX)-positive cells in the hippocampal dentate gyrus were decreased by autism induction. Brain-derived neurotrophic factor (BDNF) and tyrosine kinase B (TrkB) expressions in the hippocampus were also suppressed in the autistic rat pups. Music application alleviated short-term memory deficits with enhancing the numbers of BrdU-positive, Ki-67-positive, and DCX-positive cells in the autistic rat pups. Music application also enhanced BDNF and TrkB expressions in the autistic rat pups. The present study show that application of music enhanced hippocampal cell proliferation and alleviated short-term memory impairment through stimulating BDNF-TrkB signaling in the autistic rat pups. Music can be suggested as the therapeutic strategy to overcome the autism-induced memory deficits.

Electrical and ferroelectric properties of RF sputtered PZT/SBN on silicon for non-volatile memory applications

Science.gov (United States)

Singh, Prashant; Jha, Rajesh Kumar; Singh, Rajat Kumar; Singh, B. R.

2018-02-01

We report the integration of multilayer ferroelectric film deposited by RF magnetron sputtering and explore the electrical characteristics for its application as the gate of ferroelectric field effect transistor for non-volatile memories. PZT (Pb[Zr0.35Ti0.65]O3) and SBN (SrBi2Nb2O9) ferroelectric materials were selected for the stack fabrication due to their large polarization and fatigue free properties respectively. Electrical characterization has been carried out to obtain memory window, leakage current density, PUND and endurance characteristics. Fabricated multilayer ferroelectric film capacitor structure shows large memory window of 17.73 V and leakage current density of the order 10-6 A cm-2 for the voltage sweep of -30 to +30 V. This multilayer gate stack of PZT/SBN shows promising endurance property with no degradation in the remnant polarization for the read/write iteration cycles upto 108.

Radiation Damage in Electronic Memory Devices

OpenAIRE

Fetahović, Irfan; Pejović, Milić; Vujisić, Miloš

2013-01-01

This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simula...

Partitioning and Scheduling DSP Applications with Maximal Memory Access Hiding

Directory of Open Access Journals (Sweden)

Sha Edwin Hsing-Mean

2002-01-01

Full Text Available This paper presents an iteration space partitioning scheme to reduce the CPU idle time due to the long memory access latency. We take into consideration both the data accesses of intermediate and initial data. An algorithm is proposed to find the largest overlap for initial data to reduce the entire memory traffic. In order to efficiently hide the memory latency, another algorithm is developed to balance the ALU and memory schedules. The experiments on DSP benchmarks show that the algorithms significantly outperform the known existing methods.

Memory Indexing: A Novel Method for Tracing Memory Processes in Complex Cognitive Tasks

Science.gov (United States)

Renkewitz, Frank; Jahn, Georg

2012-01-01

We validate an eye-tracking method applicable for studying memory processes in complex cognitive tasks. The method is tested with a task on probabilistic inferences from memory. It provides valuable data on the time course of processing, thus clarifying previous results on heuristic probabilistic inference. Participants learned cue values of…

Dynamic memory management for embedded systems

CERN Document Server

Atienza Alonso, David; Poucet, Christophe; Peón-Quirós, Miguel; Bartzas, Alexandros; Catthoor, Francky; Soudris, Dimitrios

2015-01-01

This book provides a systematic and unified methodology, including basic principles and reusable processes, for dynamic memory management (DMM) in embedded systems.  The authors describe in detail how to design and optimize the use of dynamic memory in modern, multimedia and network applications, targeting the latest generation of portable embedded systems, such as smartphones. Coverage includes a variety of design and optimization topics in electronic design automation of DMM, from high-level software optimization to microarchitecture-level hardware support. The authors describe the design of multi-layer dynamic data structures for the final memory hierarchy layers of the target portable embedded systems and how to create a low-fragmentation, cost-efficient, dynamic memory management subsystem out of configurable components for the particular memory allocation and de-allocation patterns for each type of application.  The design methodology described in this book is based on propagating constraints among de...

Prospect of Ti-Ni shape memory alloy applied in reactor structures

International Nuclear Information System (INIS)

Duan Yuangang

1995-01-01

Shape memory effect mechanism, physical property, composition, manufacturing process and application in mechanical structure of Ti-Ni shape memory alloy are introduced. Applications of Ti-Ni shape memory alloy in reactor structure are prospected and some necessary technical conditions of shape memory alloy applied in the reactor structure are put forward initially

Shape memory effect alloys

International Nuclear Information System (INIS)

Koshimizu, S.

1992-01-01

Although the pseudo- or super-elasticity phenomena and the shape memory effect were known since the 1940's, the enormous curiosity and the great interest to their practical applications emerged with the development of the NITINOL alloy (Nickel-Titanium Naval Ordance Laboratory) by the NASA during the 1960's. This fact marked the appearance of a new class of materials, popularly known as shape memory effect alloys (SMEA). The objective of this work is to present a state-of-the-art of the development and applications for the SMEA. (E.O.)

Cognitive memory.

Science.gov (United States)

Widrow, Bernard; Aragon, Juan Carlos

2013-05-01

Regarding the workings of the human mind, memory and pattern recognition seem to be intertwined. You generally do not have one without the other. Taking inspiration from life experience, a new form of computer memory has been devised. Certain conjectures about human memory are keys to the central idea. The design of a practical and useful "cognitive" memory system is contemplated, a memory system that may also serve as a model for many aspects of human memory. The new memory does not function like a computer memory where specific data is stored in specific numbered registers and retrieval is done by reading the contents of the specified memory register, or done by matching key words as with a document search. Incoming sensory data would be stored at the next available empty memory location, and indeed could be stored redundantly at several empty locations. The stored sensory data would neither have key words nor would it be located in known or specified memory locations. Sensory inputs concerning a single object or subject are stored together as patterns in a single "file folder" or "memory folder". When the contents of the folder are retrieved, sights, sounds, tactile feel, smell, etc., are obtained all at the same time. Retrieval would be initiated by a query or a prompt signal from a current set of sensory inputs or patterns. A search through the memory would be made to locate stored data that correlates with or relates to the prompt input. The search would be done by a retrieval system whose first stage makes use of autoassociative artificial neural networks and whose second stage relies on exhaustive search. Applications of cognitive memory systems have been made to visual aircraft identification, aircraft navigation, and human facial recognition. Concerning human memory, reasons are given why it is unlikely that long-term memory is stored in the synapses of the brain's neural networks. Reasons are given suggesting that long-term memory is stored in DNA or RNA

Frequency-controlled wireless shape memory polymer microactuator for drug delivery application.

Science.gov (United States)

Zainal, M A; Ahmad, A; Mohamed Ali, M S

2017-03-01

This paper reports the wireless Shape-Memory-Polymer actuator operated by external radio frequency magnetic fields and its application in a drug delivery device. The actuator is driven by a frequency-sensitive wireless resonant heater which is bonded directly to the Shape-Memory-Polymer and is activated only when the field frequency is tuned to the resonant frequency of heater. The heater is fabricated using a double-sided Cu-clad Polyimide with much simpler fabrication steps compared to previously reported methods. The actuation range of 140 μm as the tip opening distance is achieved at device temperature 44 °C in 30 s using 0.05 W RF power. A repeatability test shows that the actuator's average maximum displacement is 110 μm and standard deviation of 12 μm. An experiment is conducted to demonstrate drug release with 5 μL of an acidic solution loaded in the reservoir and the device is immersed in DI water. The actuator is successfully operated in water through wireless activation. The acidic solution is released and diffused in water with an average release rate of 0.172 μL/min.

Age, memory type, and the phenomenology of autobiographical memory: findings from an Italian sample.

Science.gov (United States)

Montebarocci, Ornella; Luchetti, Martina; Sutin, Angelina R

2014-01-01

The present research explored differences in phenomenology between two types of memories, a general self-defining memory and an earliest childhood memory. A sample of 76 Italian participants were selected and categorised into two age groups: 20-30 years and 31-40 years. The Memory Experiences Questionnaire (MEQ) was administered, taking note of latency and duration times of the narratives. Consistent with the literature, the self-defining memory differed significantly from the earliest childhood memory in terms of phenomenology, with the recency of the memory associated with more intense phenomenological experience. The self-defining memory took longer to retrieve and narrate than the earliest childhood memory. Meaningful differences also emerged between the two age groups: Participants in their 30s rated their self-defining memory as more vivid, coherent, and accessible than participants in their 20s. According to latency findings, these differences suggest an expanded period of identity consolidation for younger adults. Further applications of the MEQ should be carried out to replicate these results with other samples of young adults.

Fast Initialization of Bubble-Memory Systems

Science.gov (United States)

Looney, K. T.; Nichols, C. D.; Hayes, P. J.

1986-01-01

Improved scheme several orders of magnitude faster than normal initialization scheme. State-of-the-art commercial bubble-memory device used. Hardware interface designed connects controlling microprocessor to bubblememory circuitry. System software written to exercise various functions of bubble-memory system in comparison made between normal and fast techniques. Future implementations of approach utilize E2PROM (electrically-erasable programable read-only memory) to provide greater system flexibility. Fastinitialization technique applicable to all bubble-memory devices.

Fabrication of InGaZnO Nonvolatile Memory Devices at Low Temperature of 150 degrees C for Applications in Flexible Memory Displays and Transparency Coating on Plastic Substrates.

Science.gov (United States)

Hanh, Nguyen Hong; Jang, Kyungsoo; Yi, Junsin

2016-05-01

We directly deposited amorphous InGaZnO (a-IGZO) nonvolatile memory (NVM) devices with oxynitride-oxide-dioxide (OOO) stack structures on plastic substrate by a DC pulsed magnetron sputtering and inductively coupled plasma chemical vapor deposition (ICPCVD) system, using a low-temperature of 150 degrees C. The fabricated bottom gate a-IGZO NVM devices have a wide memory window with a low operating voltage during programming and erasing, due to an effective control of the gate dielectrics. In addition, after ten years, the memory device retains a memory window of over 73%, with a programming duration of only 1 ms. Moreover, the a-IGZO films show high optical transmittance of over 85%, and good uniformity with a root mean square (RMS) roughness of 0.26 nm. This film is a promising candidate to achieve flexible displays and transparency on plastic substrates because of the possibility of low-temperature deposition, and the high transparent properties of a-IGZO films. These results demonstrate that the a-IGZO NVM devices obtained at low-temperature have a suitable programming and erasing efficiency for data storage under low-voltage conditions, in combination with excellent charge retention characteristics, and thus show great potential application in flexible memory displays.

Organic Nonvolatile Memory Devices Based on Ferroelectricity

NARCIS (Netherlands)

Naber, Ronald C. G.; Asadi, Kamal; Blom, Paul W. M.; de Leeuw, Dago M.; de Boer, Bert

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Organic nonvolatile memory devices based on ferroelectricity

NARCIS (Netherlands)

Naber, R.C.G.; Asadi, K.; Blom, P.W.M.; Leeuw, D.M. de; Boer, B. de

2010-01-01

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area

Scandium doping brings speed improvement in Sb2Te alloy for phase change random access memory application.

Science.gov (United States)

Chen, Xin; Zheng, Yonghui; Zhu, Min; Ren, Kun; Wang, Yong; Li, Tao; Liu, Guangyu; Guo, Tianqi; Wu, Lei; Liu, Xianqiang; Cheng, Yan; Song, Zhitang

2018-05-01

Phase change random access memory (PCRAM) has gained much attention as a candidate for nonvolatile memory application. To develop PCRAM materials with better properties, especially to draw closer to dynamic random access memory (DRAM), the key challenge is to research new high-speed phase change materials. Here, Scandium (Sc) has been found it is helpful to get high-speed and good stability after doping in Sb 2 Te alloy. Sc 0.1 Sb 2 Te based PCRAM cell can achieve reversible switching by applying even 6 ns voltage pulse experimentally. And, Sc doping not only promotes amorphous stability but also improves the endurance ability comparing with pure Sb 2 Te alloy. Moreover, according to DFT calculations, strong Sc-Te bonds lead to the rigidity of Sc centered octahedrons, which may act as crystallization precursors in recrystallization process to boost the set speed.

Research on the Memory Ethics and Thought Transformation Pattern and the Applications on Contemporary Literature

Institute of Scientific and Technical Information of China (English)

Xinxin Li[1

2016-01-01

In this paper, we conduct research on the memory ethics and thought transformation pattern and the applications on contemporary literature. Compared to scientifi c thinking, historical thinking, the thinking process characterized by direct image of literary creation of system integration, literary creation process is a fi ction. Literary psychology studies have shown that the transmission of literature as a kind of aesthetic experience, is far from perfect memories of feature, but memory, association, imagination, illusion, such as the result of the comprehensive sports psychological function, is in the creation subject specifi c emotions and as under the guidance of the appearance of the restructuring, merger. From the discussion above we can see that whether it is a literary language of authenticity, or false judgment characteristics of literary language, explain the fact that in literary text is not has direct realistic context, but a self-reference words, and it is a virtual space of the empirical. In this paper, we discuss the related theory with modifi cation that is innovative.

An overview of applications of the mesomechanical approach to shape memory phenomena – completed by a new application to two-way shape memory

Czech Academy of Sciences Publication Activity Database

Kafka, Vratislav

19 2008, č. 1 (2008), s. 3-17 ISSN 1045-389X Institutional research plan: CEZ:AV0Z20710524 Keywords : shape memory * mesomechanics * two-way shape memory Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.293, year: 2008

Memory Management of Multimedia Services in Smart Homes

Science.gov (United States)

Kamel, Ibrahim; Muhaureq, Sanaa A.

Nowadays there is a wide spectrum of applications that run in smart home environments. Consequently, home gateway, which is a central component in the smart home, must manage many applications despite limited memory resources. OSGi is a middleware standard for home gateways. OSGi models services as dependent components. Moreover, these applications might differ in their importance. Services collaborate and complement each other to achieve the required results. This paper addresses the following problem: given a home gateway that hosts several applications with different priorities and arbitrary dependencies among them. When the gateway runs out of memory, which application or service will be stopped or kicked out of memory to start a new service. Note that stopping a given service means that all the services that depend on it will be stopped too. Because of the service dependencies, traditional memory management techniques, in the operating system literatures might not be efficient. Our goal is to stop the least important and the least number of services. The paper presents a novel algorithm for home gateway memory management. The proposed algorithm takes into consideration the priority of the application and dependencies between different services, in addition to the amount of memory occupied by each service. We implement the proposed algorithm and performed many experiments to evaluate its performance and execution time. The proposed algorithm is implemented as a part of the OSGi framework (Open Service Gateway initiative). We used best fit and worst fit as yardstick to show the effectiveness of the proposed algorithm.

DYNAMIC MEMORY ALLOCATION – CLR PROFILER

Directory of Open Access Journals (Sweden)

Adrian LUPASC

2014-06-01

Full Text Available At the present time, information systems are an important component in the development of many activities, due to their ability of managing a large amount of data and performing complex operations in a very short time. In this regard, very important is the correct management of all available resources, especially memory management. Haven’t happened to test an application, but it runs out of memory? This paper is trying to explain some of the situations causing those problems and also is trying to find some solutions for fixing them. Concluding, the purpose of this paper is to emphasize on one hand the importance of using a memory profiler in the development of your applications and on the other hand, the advantages brought by CLR Profiler on your .NET applications.

Light sensitivity of a one transistor-one capacitor memory cell when used as a micromirror actuator in projector applications

Science.gov (United States)

Huffman, James Douglas

2001-11-01

The most important issue facing the future business success of the Digital Micromirror Device or DMD™ produced by Texas Instruments is the cost of the actual device. As the business and consumer markets call for higher resolution displays, the array size will have to be increased to incorporate more pixels. The manufacturing costs associated with building these higher resolution displays follow an exponential relation with the number of pixels due to yield loss and reduced number of chips per silicon wafer. Each pixel is actuated by electrostatics that are provided by a memory cell that is built in the underlying silicon substrate. One way to decrease cost of the wafer is to change the memory cell architecture from a static random access configuration or SRAM to a dynamic random access configuration or DRAM. This change has the benefits of having fewer components per area and a lower metal density. This reduction in the component count and metal density has a dramatic effect on the yield of the memory array by reducing the particle sensitivity of the underlying cell. The main drawback to using a DRAM configuration in a display application is the light sensitivity of a charge storage device built in the silicon substrate. As the photons pass through the mechanical micromirrors and illuminate the DRAM cell, the effective electrostatic potential of the memory element used for the mirror actuation is reduced. This dissertation outlines the issues associated with the light sensitivity of a DRAM memory cell as the actuation element for a micromirror. The concept of charge depletion on a silicon capacitor due to recombination of photogenerated carriers is explored and experimentally verified. The effects of the reduced potential on the capacitor on the micromirror are also explored. Optical modeling is used to determine the incoming photon flux to determine the benefits of adding a charge recombination region as part of the DRAM memory cell. Several options are explored

The Impact of Process Scaling on Scratchpad Memory Energy Savings

Directory of Open Access Journals (Sweden)

Bennion Redd

2014-09-01

Full Text Available Scratchpad memories have been shown to reduce power consumption, but the different characteristics of nanometer scale processes, such as increased leakage power, motivate an examination of how the benefits of these memories change with process scaling. Process and application characteristics affect the amount of energy saved by a scratchpad memory. Increases in leakage as a percentage of total power particularly impact applications that rarely access memory. This study examines how the benefits of scratchpad memories have changed in newer processes, based on the measured performance of the WIMS (Wireless Integrated MicroSystems microcontroller implemented in 180- and 65-nm processes and upon simulations of this microcontroller implemented in a 32-nm process. The results demonstrate that scratchpad memories will continue to improve the power dissipation of many applications, given the leakage anticipated in the foreseeable future.

Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

Science.gov (United States)

Jayanti, Srikant

Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

Highly Stretchable Non-volatile Nylon Thread Memory

Science.gov (United States)

Kang, Ting-Kuo

2016-04-01

Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

Carbon nanomaterials for non-volatile memories

Science.gov (United States)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

Magnetic vortex racetrack memory

Science.gov (United States)

Geng, Liwei D.; Jin, Yongmei M.

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

Improved memory characteristics by NH3-nitrided GdO as charge storage layer for nonvolatile memory applications

International Nuclear Information System (INIS)

Liu, L.; Xu, J. P.; Ji, F.; Chen, J. X.; Lai, P. T.

2012-01-01

Charge-trapping memory capacitor with nitrided gadolinium oxide (GdO) as charge storage layer (CSL) is fabricated, and the influence of post-deposition annealing in NH 3 on its memory characteristics is investigated. Transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction are used to analyze the cross-section and interface quality, composition, and crystallinity of the stack gate dielectric, respectively. It is found that nitrogen incorporation can improve the memory window and achieve a good trade-off among the memory properties due to NH 3 -annealing-induced reasonable distribution profile of a large quantity of deep-level bulk traps created in the nitrided GdO film and reduction of shallow traps near the CSL/SiO 2 interface.

Analysis on applicable error-correcting code strength of storage class memory and NAND flash in hybrid storage

Science.gov (United States)

Matsui, Chihiro; Kinoshita, Reika; Takeuchi, Ken

2018-04-01

A hybrid of storage class memory (SCM) and NAND flash is a promising technology for high performance storage. Error correction is inevitable on SCM and NAND flash because their bit error rate (BER) increases with write/erase (W/E) cycles, data retention, and program/read disturb. In addition, scaling and multi-level cell technologies increase BER. However, error-correcting code (ECC) degrades storage performance because of extra memory reading and encoding/decoding time. Therefore, applicable ECC strength of SCM and NAND flash is evaluated independently by fixing ECC strength of one memory in the hybrid storage. As a result, weak BCH ECC with small correctable bit is recommended for the hybrid storage with large SCM capacity because SCM is accessed frequently. In contrast, strong and long-latency LDPC ECC can be applied to NAND flash in the hybrid storage with large SCM capacity because large-capacity SCM improves the storage performance.

Magnetic vortex racetrack memory

Energy Technology Data Exchange (ETDEWEB)

Geng, Liwei D.; Jin, Yongmei M., E-mail: ymjin@mtu.edu

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. - Highlights: • Advance fundamental knowledge of current-driven magnetic vortex phenomena. • Report appealing new magnetic racetrack memory based on current-controlled magnetic vortices in nanowires. • Provide a novel approach to adjust current magnitude for data propagation. • Overcome the limitations of domain wall racetrack memory.

VOP memory management in MPEG-4

Science.gov (United States)

Vaithianathan, Karthikeyan; Panchanathan, Sethuraman

2001-03-01

MPEG-4 is a multimedia standard that requires Video Object Planes (VOPs). Generation of VOPs for any kind of video sequence is still a challenging problem that largely remains unsolved. Nevertheless, if this problem is treated by imposing certain constraints, solutions for specific application domains can be found. MPEG-4 applications in mobile devices is one such domain where the opposite goals namely low power and high throughput are required to be met. Efficient memory management plays a major role in reducing the power consumption. Specifically, efficient memory management for VOPs is difficult because the lifetimes of these objects vary and these life times may be overlapping. Varying life times of the objects requires dynamic memory management where memory fragmentation is a key problem that needs to be addressed. In general, memory management systems address this problem by following a combination of strategy, policy and mechanism. For MPEG4 based mobile devices that lack instruction processors, a hardware based memory management solution is necessary. In MPEG4 based mobile devices that have a RISC processor, using a Real time operating system (RTOS) for this memory management task is not expected to be efficient because the strategies and policies used by the ROTS is often tuned for handling memory segments of smaller sizes compared to object sizes. Hence, a memory management scheme specifically tuned for VOPs is important. In this paper, different strategies, policies and mechanisms for memory management are considered and an efficient combination is proposed for the case of VOP memory management along with a hardware architecture, which can handle the proposed combination.

Thermoviscoelastic shape memory behavior for epoxy-shape memory polymer

International Nuclear Information System (INIS)

Chen, Jianguo; Liu, Liwu; Liu, Yanju; Leng, Jinsong

2014-01-01

There are various applications for shape memory polymer (SMP) in the smart materials and structures field due to its large recoverable strain and controllable driving method. The mechanical shape memory deformation mechanism is so obscure that many samples and test schemes have to be tried in order to verify a final design proposal for a smart structure system. This paper proposes a simple and very useful method to unambiguously analyze the thermoviscoelastic shape memory behavior of SMP smart structures. First, experiments under different temperature and loading conditions are performed to characterize the large deformation and thermoviscoelastic behavior of epoxy-SMP. Then, a rheological constitutive model, which is composed of a revised standard linear solid (SLS) element and a thermal expansion element, is proposed for epoxy-SMP. The thermomechanical coupling effect and nonlinear viscous flowing rules are considered in the model. Then, the model is used to predict the measured rubbery and time-dependent response of the material, and different thermomechanical loading histories are adopted to verify the shape memory behavior of the model. The results of the calculation agree with experiments satisfactorily. The proposed shape memory model is practical for the design of SMP smart structures. (paper)

Energy Scaling Advantages of Resistive Memory Crossbar Based Computation and its Application to Sparse Coding

Directory of Open Access Journals (Sweden)

Sapan eAgarwal

2016-01-01

Full Text Available The exponential increase in data over the last decade presents a significant challenge to analytics efforts that seek to process and interpret such data for various applications. Neural-inspired computing approaches are being developed in order to leverage the computational advantages of the analog, low-power data processing observed in biological systems. Analog resistive memory crossbars can perform a parallel read or a vector-matrix multiplication as well as a parallel write or a rank-1 update with high computational efficiency. For an NxN crossbar, these two kernels are at a minimum O(N more energy efficient than a digital memory-based architecture. If the read operation is noise limited, the energy to read a column can be independent of the crossbar size (O(1. These two kernels form the basis of many neuromorphic algorithms such as image, text, and speech recognition. For instance, these kernels can be applied to a neural sparse coding algorithm to give an O(N reduction in energy for the entire algorithm. Sparse coding is a rich problem with a host of applications including computer vision, object tracking, and more generally unsupervised learning.

The MONOS memory transistor: application in a radiation-hard nonvolatile RAM

International Nuclear Information System (INIS)

Brown, W.D.

1985-01-01

The MONOS (metal-oxide-nitride-oxide-silicon) device is a prime candidate for use as the nonvolatile memory element in a radiation-hardened RAM (random-access memory). The endurance, retention and radiation properties of MONOS memory transistors have been studied as a function of post nitride deposition annealing. Following the nitride layer deposition, all devices were subjected to an 800 0 C oxidation step and some were then annealed at 900 0 C in nitrogen. The nitrogen anneal produces an increase in memory window size of approximately 40%. The memory window center of the annealed devices is shifted toward more positive voltages and is more stable with endurance cycling. Endurance cycling to 10 9 cycles produces a 20% increase in memory window size and a 60% increase in decay rate. For a radiation total dose of 10 6 rads (Si), the memory window size is essentially unchanged and the decay rate increases approximately 13%. A combination of 10 9 cycles and 10 6 rads (Si) reduces the decades of retention (in sec) from 6.3 to 4.3 for a +- 23-V 16-μsec write/erase pulse. (author)

Sparse distributed memory overview

Science.gov (United States)

Raugh, Mike

1990-01-01

The Sparse Distributed Memory (SDM) project is investigating the theory and applications of massively parallel computing architecture, called sparse distributed memory, that will support the storage and retrieval of sensory and motor patterns characteristic of autonomous systems. The immediate objectives of the project are centered in studies of the memory itself and in the use of the memory to solve problems in speech, vision, and robotics. Investigation of methods for encoding sensory data is an important part of the research. Examples of NASA missions that may benefit from this work are Space Station, planetary rovers, and solar exploration. Sparse distributed memory offers promising technology for systems that must learn through experience and be capable of adapting to new circumstances, and for operating any large complex system requiring automatic monitoring and control. Sparse distributed memory is a massively parallel architecture motivated by efforts to understand how the human brain works. Sparse distributed memory is an associative memory, able to retrieve information from cues that only partially match patterns stored in the memory. It is able to store long temporal sequences derived from the behavior of a complex system, such as progressive records of the system's sensory data and correlated records of the system's motor controls.

A Memory Efficient Network Encryption Scheme

Science.gov (United States)

El-Fotouh, Mohamed Abo; Diepold, Klaus

In this paper, we studied the two widely used encryption schemes in network applications. Shortcomings have been found in both schemes, as these schemes consume either more memory to gain high throughput or low memory with low throughput. The need has aroused for a scheme that has low memory requirements and in the same time possesses high speed, as the number of the internet users increases each day. We used the SSM model [1], to construct an encryption scheme based on the AES. The proposed scheme possesses high throughput together with low memory requirements.

Axially modulated arch resonator for logic and memory applications

KAUST Repository

Hafiz, Md Abdullah Al

2018-01-17

We demonstrate reconfigurable logic and random access memory devices based on an axially modulated clamped-guided arch resonator. The device is electrostatically actuated and the motional signal is capacitively sensed, while the resonance frequency is modulated through an axial electrostatic force from the guided side of the microbeam. A multi-physics finite element model is used to verify the effectiveness of the axial modulation. We present two case studies: first, a reconfigurable two-input logic gate based on the linear resonance frequency modulation, and second, a memory element based on the hysteretic frequency response of the resonator working in the nonlinear regime. The energy consumptions of the device for both logic and memory operations are in the range of picojoules, promising for energy efficient alternative computing paradigm.

EPS Mid-Career Award 2011. Are there multiple memory systems? Tests of models of implicit and explicit memory.

Science.gov (United States)

Shanks, David R; Berry, Christopher J

2012-01-01

This article reviews recent work aimed at developing a new framework, based on signal detection theory, for understanding the relationship between explicit (e.g., recognition) and implicit (e.g., priming) memory. Within this framework, different assumptions about sources of memorial evidence can be framed. Application to experimental results provides robust evidence for a single-system model in preference to multiple-systems models. This evidence comes from several sources including studies of the effects of amnesia and ageing on explicit and implicit memory. The framework allows a range of concepts in current memory research, such as familiarity, recollection, fluency, and source memory, to be linked to implicit memory. More generally, this work emphasizes the value of modern computational modelling techniques in the study of learning and memory.

Paging memory from random access memory to backing storage in a parallel computer

Science.gov (United States)

Archer, Charles J; Blocksome, Michael A; Inglett, Todd A; Ratterman, Joseph D; Smith, Brian E

2013-05-21

Paging memory from random access memory (`RAM`) to backing storage in a parallel computer that includes a plurality of compute nodes, including: executing a data processing application on a virtual machine operating system in a virtual machine on a first compute node; providing, by a second compute node, backing storage for the contents of RAM on the first compute node; and swapping, by the virtual machine operating system in the virtual machine on the first compute node, a page of memory from RAM on the first compute node to the backing storage on the second compute node.

Phase transformation, oxidation and shape memory properties of Ti–50Au–10Zr alloy for high temperature applications

International Nuclear Information System (INIS)

Wadood, A.; Hosoda, H.; Yamabe-Mitarai, Y.

2014-01-01

Highlights: • Ti–50Au–10Zr exhibited better thermo-mechanical and shape memory properties than Ti–50Au. • Improvement was related to solid solution and precipitation strengthening. • No oxidation problem as oxidation was observed at 100 K higher than A f . • TMA was used not only for thermo-mechanical but also for shape memory and oxidation. - Abstract: In this study, we investigated the phase transformation, oxidation and high temperature mechanical and shape memory properties of Ti–50Au–10Zr (all compositions in atomic%) alloy. Thermo-mechanical analyzer (TMA) was used not only for phase transformation but also for the measurement of shape memory effect and oxidation behavior in air environment. Ti–50Au–10Zr exhibited lower martensitic transformation temperature of 758 K than TiAu stoichiometric alloy exhibiting 870 K since Zr addition stabilizes B2 parent phase. Oxidation was initiated at 873 K that was about 100 K higher than the austenite finish temperature, indicating no such oxidation problems for practical use. Shape memory effect was improved by partial substitution of Ti with Zr in Ti–50Au–10Zr alloy. Compression test of Ti–50Au–10Zr revealed high compressive strength of 1239 MPa of martensite at 691 K (=M f − 50 K) and 924 MPa of B2 parent phase at 834 K (=A f + 50 K) in comparison with Ti–50Au. It is concluded that Zr is effective to improve the mechanical and shape memory properties of TiAu alloy, and that Ti–50Au–10Zr shape memory alloy has potential for high temperature (∼650–850 K) practical applications

Locating the self in autobiographical memories

DEFF Research Database (Denmark)

Antalikova, Radka; de la Mata, Manuel; Santamaría, Andrés

2016-01-01

Systematic cross-cultural variation in autobiographical memory has been demonstrated in previous research. This variation has been interpreted as mirroring differences in culturally diverging self-conceptions, implying that content characteristics of autobiographical memories can be used...... to capture how the self is present, and presented, in autobiographical memory in a more nuanced way than done in previous research. Hence, the system could be applicable for use in studies with a variety of culturally diverse populations....

Working Memory and Neurofeedback.

Science.gov (United States)

YuLeung To, Eric; Abbott, Kathy; Foster, Dale S; Helmer, D'Arcy

2016-01-01

Impairments in working memory are typically associated with impairments in other cognitive faculties such as attentional processes and short-term memory. This paper briefly introduces neurofeedback as a treatment modality in general, and, more specifically, we review several of the current modalities successfully used in neurofeedback (NF) for the treatment of working memory deficits. Two case studies are presented to illustrate how neurofeedback is applied in treatment. The development of Low Resolution Electromagnetic Tomography (LORETA) and its application in neurofeedback now makes it possible to specifically target deep cortical/subcortical brain structures. Developments in neuroscience concerning neural networks, combined with highly specific yet practical NF technologies, makes neurofeedback of particular interest to neuropsychological practice, including the emergence of specific methodologies for treating very difficult working memory (WM) problems.

A view of studies on listening comprehension within the theory of working memory

OpenAIRE

福田, 倫子

2004-01-01

The present paper discusses four aspects : (1) the relation between the process of language comprehension and working memory, (2) overview of studies on working memory model, (3) application of the working memory to studies of listening comprehension in previous studies, (4) potentiality of application of the working memory model to studies of listening comprehension of second language acquisition.

A 32-bit computer for large memory applications on the FASTBUS

International Nuclear Information System (INIS)

Kellner, R.; Blossom, J.M.; Hung, J.P.

1985-01-01

A FASTBUS based 32-bit computer is being built at Los Alamos National Laboratory for use in systems requiring large fast memory in the FASTBUS environment. A separate local execution bus allows data reduction to proceed concurrently with other FASTBUS operations. The computer, which can operate in either master or slave mode, includes the National Semiconductor NS32032 chip set with demand paged memory management, floating point slave processor, interrupt control unit, timers, and time-of-day clock. The 16.0 megabytes of random access memory are interleaved to allow windowed direct memory access on and off the FASTBUS at 80 megabytes per second

Efficient Management for Hybrid Memory in Managed Language Runtime

OpenAIRE

Wang , Chenxi; Cao , Ting; Zigman , John; Lv , Fang; Zhang , Yunquan; Feng , Xiaobing

2016-01-01

Part 1: Memory: Non-Volatile, Solid State Drives, Hybrid Systems; International audience; Hybrid memory, which leverages the benefits of traditional DRAM and emerging memory technologies, is a promising alternative for future main memory design. However popular management policies through memory-access recording and page migration may invoke non-trivial overhead in execution time and hardware space. Nowadays, managed language applications are increasingly dominant in every kind of platform. M...

Portable memory consistency for software managed distributed memory in many-core SoC

NARCIS (Netherlands)

Rutgers, J.H.; Bekooij, Marco Jan Gerrit; Smit, Gerardus Johannes Maria

2013-01-01

Porting software to different platforms can require modifications of the application. One of the issues is that the targeted hardware supports another memory consistency model. As a consequence, the completion order of reads and writes in a multi-threaded application can change, which may result in

Feasibility study of polyurethane shape-memory polymer actuators for pressure bandage application

International Nuclear Information System (INIS)

Ahmad, Manzoor; Luo Jikui; Miraftab, Mohsen

2012-01-01

The feasibility of laboratory-synthesized polyurethane-based shape-memory polymer (SMPU) actuators has been investigated for possible application in medical pressure bandages where gradient pressure is required between the ankle and the knee for treatment of leg ulcers. In this study, using heat as the stimulant, SMPU strip actuators have been subjected to gradual and cyclic stresses; their recovery force, reproducibility and reusability have been monitored with respect to changes in temperature and circumference of a model leg, and the stress relaxation at various temperatures has been investigated. The findings suggest that SMPU actuators can be used for the development of the next generation of pressure bandages.

Feasibility study of polyurethane shape-memory polymer actuators for pressure bandage application.

Science.gov (United States)

Ahmad, Manzoor; Luo, Jikui; Miraftab, Mohsen

2012-02-01

The feasibility of laboratory-synthesized polyurethane-based shape-memory polymer (SMPU) actuators has been investigated for possible application in medical pressure bandages where gradient pressure is required between the ankle and the knee for treatment of leg ulcers. In this study, using heat as the stimulant, SMPU strip actuators have been subjected to gradual and cyclic stresses; their recovery force, reproducibility and reusability have been monitored with respect to changes in temperature and circumference of a model leg, and the stress relaxation at various temperatures has been investigated. The findings suggest that SMPU actuators can be used for the development of the next generation of pressure bandages.

Shape memory polymers and their composites in aerospace applications: a review

International Nuclear Information System (INIS)

Liu, Yanju; Du, Haiyang; Liu, Liwu; Leng, Jinsong

2014-01-01

As a new class of smart materials, shape memory polymers and their composites (SMPs and SMPCs) can respond to specific external stimulus and remember the original shape. There are many types of stimulus methods to actuate the deformation of SMPs and SMPCs, of which the thermal- and electro-responsive components and structures are common. In this review, the general mechanism of SMPs and SMPCs are first introduced, the stimulus methods are then discussed to demonstrate the shape recovery effect, and finally, the applications of SMPs and SMPCs that are reinforced with fiber materials in aerospace are reviewed. SMPC hinges and booms are discussed in the part on components; the booms can be divided again into foldable SMPC truss booms, coilable SMPC truss booms and storable tubular extendible member (STEM) booms. In terms of SMPC structures, the solar array and deployable panel, reflector antenna and morphing wing are introduced in detail. Considering the factors of weight, recovery force and shock effect, SMPCs are expected to have great potential applications in aerospace. (topical review)

Simplified Interface to Complex Memory Hierarchies 1.x

Energy Technology Data Exchange (ETDEWEB)

2017-02-21

Memory systems are expected to get evermore complicated in the coming years, and it isn't clear exactly what form that complexity will take. On the software side, a simple, flexible way of identifying and working with memory pools is needed. Additionally, most developers seek code portability and do not want to learn the intricacies of complex memory. Hence, we believe that a library for interacting with complex memory systems should expose two kinds of abstraction: First, a low-level, mechanism-based interface designed for the runtime or advanced user that wants complete control, with its focus on simplified representation but with all decisions left to the caller. Second, a high-level, policy-based interface designed for ease of use for the application developer, in which we aim for best-practice decisions based on application intent. We have developed such a library, called SICM: Simplified Interface to Complex Memory.

Embedded nonvolatile memory devices with various silicon nitride energy band gaps on glass used for flat panel display applications

International Nuclear Information System (INIS)

Son, Dang Ngoc; Van Duy, Nguyen; Jung, Sungwook; Yi, Junsin

2010-01-01

Nonvolatile memory (NVM) devices with a nitride–nitride–oxynitride stack structure on a rough poly-silicon (poly-Si) surface were fabricated using a low-temperature poly-Si (LTPS) thin film transistor technology on glass substrates for application of flat panel display (FPD). The plasma-assisted oxidation/nitridation method is used to form a uniform oxynitride with an ultrathin tunneling layer on a rough LTPS surface. The NVMs, using a Si-rich silicon nitride film as a charge-trapping layer, were proposed as one of the solutions for the improvement of device performance such as the program/erase speed, the memory window and the charge retention characteristics. To further improve the vertical scaling and charge retention characteristics of NVM devices, the high-κ high-density N-rich SiN x films are used as a blocking layer. The fabricated NVM devices have outstanding electrical properties, such as a low threshold voltage, a high ON/OFF current ratio, a low subthreshold swing, a low operating voltage of less than ±9 V and a large memory window of 3.7 V, which remained about 1.9 V over a period of 10 years. These characteristics are suitable for electrical switching and data storage with in FPD application

MODA A Framework for Memory Centric Performance Characterization

Energy Technology Data Exchange (ETDEWEB)

Shrestha, Sunil; Su, Chun-Yi; White, Amanda M.; Manzano Franco, Joseph B.; Marquez, Andres; Feo, John T.

2012-06-29

In the age of massive parallelism, the focus of performance analysis has switched from the processor and related structures to the memory and I/O resources. Adapting to this new reality, a performance analysis tool has to provide a way to analyze resource usage to pinpoint existing and potential problems in a given application. This paper provides an overview of the Memory Observant Data Analysis (MODA) tool, a memory-centric tool first implemented on the Cray XMT supercomputer. Throughout the paper, MODA's capabilities have been showcased with experiments done on matrix multiply and Graph-500 application codes.

Partitioned key-value store with atomic memory operations

Energy Technology Data Exchange (ETDEWEB)

Bent, John M.; Faibish, Sorin; Grider, Gary

2017-02-07

A partitioned key-value store is provided that supports atomic memory operations. A server performs a memory operation in a partitioned key-value store by receiving a request from an application for at least one atomic memory operation, the atomic memory operation comprising a memory address identifier; and, in response to the atomic memory operation, performing one or more of (i) reading a client-side memory location identified by the memory address identifier and storing one or more key-value pairs from the client-side memory location in a local key-value store of the server; and (ii) obtaining one or more key-value pairs from the local key-value store of the server and writing the obtained one or more key-value pairs into the client-side memory location identified by the memory address identifier. The server can perform functions obtained from a client-side memory location and return a result to the client using one or more of the atomic memory operations.

Variable stiffness corrugated composite structure with shape memory polymer for morphing skin applications

Science.gov (United States)

Gong, Xiaobo; Liu, Liwu; Scarpa, Fabrizio; Leng, Jinsong; Liu, Yanju

2017-03-01

This work presents a variable stiffness corrugated structure based on a shape memory polymer (SMP) composite with corrugated laminates as reinforcement that shows smooth aerodynamic surface, extreme mechanical anisotropy and variable stiffness for potential morphing skin applications. The smart composite corrugated structure shows a low in-plane stiffness to minimize the actuation energy, but also possess high out-of-plane stiffness to transfer the aerodynamic pressure load. The skin provides an external smooth aerodynamic surface because of the one-sided filling with the SMP. Due to variable stiffness of the shape memory polymer the morphing skin exhibits a variable stiffness with a change of temperature, which can help the skin adjust its stiffness according different service environments and also lock the temporary shape without external force. Analytical models related to the transverse and bending stiffness are derived and validated using finite element techniques. The stiffness of the morphing skin is further investigated by performing a parametric analysis against the geometry of the corrugation and various sets of SMP fillers. The theoretical and numerical models show a good agreement and demonstrate the potential of this morphing skin concept for morphing aircraft applications. We also perform a feasibility study of the use of this morphing skin in a variable camber morphing wing baseline. The results show that the morphing skin concept exhibits sufficient bending stiffness to withstand the aerodynamic load at low speed (less than 0.3 Ma), while demonstrating a large transverse stiffness variation (up to 191 times) that helps to create a maximum mechanical efficiency of the structure under varying external conditions.

Radiation Damage in Electronic Memory Devices

Directory of Open Access Journals (Sweden)

Irfan Fetahović

2013-01-01

Full Text Available This paper investigates the behavior of semiconductor memories exposed to radiation in order to establish their applicability in a radiation environment. The experimental procedure has been used to test radiation hardness of commercial semiconductor memories. Different types of memory chips have been exposed to indirect ionizing radiation by changing radiation dose intensity. The effect of direct ionizing radiation on semiconductor memory behavior has been analyzed by using Monte Carlo simulation method. Obtained results show that gamma radiation causes decrease in threshold voltage, being proportional to the absorbed dose of radiation. Monte Carlo simulations of radiation interaction with material proved to be significant and can be a good estimation tool in probing semiconductor memory behavior in radiation environment.

Collective Memory Transfers for Multi-Core Chips

Energy Technology Data Exchange (ETDEWEB)

Michelogiannakis, George; Williams, Alexander; Shalf, John

2013-11-13

Future performance improvements for microprocessors have shifted from clock frequency scaling towards increases in on-chip parallelism. Performance improvements for a wide variety of parallel applications require domain-decomposition of data arrays from a contiguous arrangement in memory to a tiled layout for on-chip L1 data caches and scratchpads. How- ever, DRAM performance suffers under the non-streaming access patterns generated by many independent cores. We propose collective memory scheduling (CMS) that actively takes control of collective memory transfers such that requests arrive in a sequential and predictable fashion to the memory controller. CMS uses the hierarchically tiled arrays formal- ism to compactly express collective operations, which greatly improves programmability over conventional prefetch or list- DMA approaches. CMS reduces application execution time by up to 32% and DRAM read power by 2.2×, compared to a baseline DMA architecture such as STI Cell.

A refractory metal gate approach for micronic CMOS technology

International Nuclear Information System (INIS)

Lubowiecki, V.; Ledys, J.L.; Plossu, C.; Balland, B.

1987-01-01

In the future, devices scaling down, integration density and performance improvements are going to bring a number of conventional circuit design and process techniques to their fundamental limits. To avoid any severe limitations in MOS ULSI (Ultra Large Scale Integration) technologies, interconnection materials and schemes are required to emerge, in order to face the Megabits memory field. Among those, the gate approach will obviously take a keyrole, when the operating speed of ULSI chips will reach the practical upper limits imposed by parasitic resistances and capacitances which stem from the circuit interconnect wiring. Even if fairly suitable for MOS process, doped polycrystalline silicon is being gradually replaced by refractory metal silicide or polycide structures, which match better with low resistivity requirements. However, as we approach the submicronic IC's, higher conductivity materials will be paid more and more attention. Recently, works have been devoted and published on refractory metal gate technologies. Molybdenum or tungsten, deposited either by CVD or PVD methods, are currently reported even if some drawbacks in their process integration still remain. This paper is willing to present such an approach based on tungsten (more reliable than Molybdenum deposited by LPCVD (giving more conductive and more stable films than PVD). Deposition process will be first described. Then CMOS process flow will allow us to focus on specific refractory metal gate issues. Finally, electrical and physical properties will be assessed, which will demonstrate the feasibility of such a technology as well as the compatibility of the tungsten with most of the usual techniques

Memory reconsolidation in aversive and appetitive settings

Directory of Open Access Journals (Sweden)

Amy Claire Reichelt

2013-09-01

Full Text Available Memory reconsolidation has been observed across species and in a number of behavioural paradigms. The majority of memory reconsolidation studies have been carried out in pavlovian fear conditioning and other aversive memory settings, with potential implications for the treatment of post-traumatic stress disorder. However, there is a growing literature on memory reconsolidation in appetitive reward-related memory paradigms, including translational models of drug addiction. While there appears to be substantial similarity in the basic phenomenon and underlying mechanisms of memory reconsolidation across unconditioned stimulus valence, there are also notable discrepancies. These arise both when comparing aversive to appetitive paradigms and also across different paradigms within the same valence of memory. We review the demonstration of memory reconsolidation across different aversive and appetitive memory paradigms, the commonalities and differences in underlying mechanisms and the conditions under which each memory undergoes reconsolidation. We focus particularly on whether principles derived from the aversive literature are applicable to appetitive settings, and also whether the expanding literature in appetitive paradigms is informative for fear memory reconsolidation.

Nanoscale phase change memory materials.

Science.gov (United States)

Caldwell, Marissa A; Jeyasingh, Rakesh Gnana David; Wong, H-S Philip; Milliron, Delia J

2012-08-07

Phase change memory materials store information through their reversible transitions between crystalline and amorphous states. For typical metal chalcogenide compounds, their phase transition properties directly impact critical memory characteristics and the manipulation of these is a major focus in the field. Here, we discuss recent work that explores the tuning of such properties by scaling the materials to nanoscale dimensions, including fabrication and synthetic strategies used to produce nanoscale phase change memory materials. The trends that emerge are relevant to understanding how such memory technologies will function as they scale to ever smaller dimensions and also suggest new approaches to designing materials for phase change applications. Finally, the challenges and opportunities raised by integrating nanoscale phase change materials into switching devices are discussed.

Cost Analysis for Real-time Java Scoped-memory Areas

Directory of Open Access Journals (Sweden)

Delvin Defoe

2007-08-01

Full Text Available Java has recently joined C and C++ as a development platform for real-time and embedded applications. Java's garbage collection, while generally a useful feature, can be problematic for these applications: garbage collection occurs at unpredictable times and its latency is typically unbounded. This can compromise necessary real-time guarantees. To overcome these limitations, the Real-Time for Java Expert Group (RTJEG proposed the Real-Time Specification for Java (RTSJ, which introduced new memory models and new threads to utilize those models. One such memory model uses scoped-memory areas, which work best in the context of a NoHeapRealtimeThread (NHRT. Although much work has been done with scoped-memory areas and NHRTs, there is no system-independent analysis of their costs. In this article we present an asymptotic analysis for RTSJ scoped-memory areas and NHRTs.

An Introduction to a Porous Shape Memory Alloy Dynamic Data Driven Application System

KAUST Repository

Douglas, Craig C.

2012-06-02

Shape Memory Alloys are capable of changing their crystallographic structure due to changes of temperature and/or stress. Our research focuses on three points: (1) Iterative Homogenization of Porous SMAs: Development of a Multiscale Model of porous SMAs utilizing iterative homogenization and based on existing knowledge of constitutive modeling of polycrystalline SMAs. (2) DDDAS: Develop tools to turn on and off the sensors and heating unit(s), to monitor on-line data streams, to change scales based on incoming data, and to control what type of data is generated. The application must have the capability to be run and steered remotely. (3) Modeling and applications of porous SMA: Vibration isolation devices with SMA and porous SMA components for aerospace applications will be analyzed and tested. Numerical tools for modeling porous SMAs with a second viscous phase will be developed.The outcome will be a robust, three-dimensional, multiscale model of porous SMA that can be used in complicated, real-life structural analysis of SMA components using a DDDAS framework.

Long-Term Memory: A State-Space Approach

Science.gov (United States)

Kiss, George R.

1972-01-01

Some salient concepts derived from the information sciences and currently used in theories of human memory are critically reviewed. The application of automata theory is proposed as a new approach in this field. The approach is illustrated by applying it to verbal memory. (Author)

Novel memory architecture for video signal processor

Science.gov (United States)

Hung, Jen-Sheng; Lin, Chia-Hsing; Jen, Chein-Wei

1993-11-01

An on-chip memory architecture for video signal processor (VSP) is proposed. This memory structure is a two-level design for the different data locality in video applications. The upper level--Memory A provides enough storage capacity to reduce the impact on the limitation of chip I/O bandwidth, and the lower level--Memory B provides enough data parallelism and flexibility to meet the requirements of multiple reconfigurable pipeline function units in a single VSP chip. The needed memory size is decided by the memory usage analysis for video algorithms and the number of function units. Both levels of memory adopted a dual-port memory scheme to sustain the simultaneous read and write operations. Especially, Memory B uses multiple one-read-one-write memory banks to emulate the real multiport memory. Therefore, one can change the configuration of Memory B to several sets of memories with variable read/write ports by adjusting the bus switches. Then the numbers of read ports and write ports in proposed memory can meet requirement of data flow patterns in different video coding algorithms. We have finished the design of a prototype memory design using 1.2- micrometers SPDM SRAM technology and will fabricated it through TSMC, in Taiwan.

Deposition and Characterization of CVD-Grown Ge-Sb Thin Film Device for Phase-Change Memory Application

Directory of Open Access Journals (Sweden)

C. C. Huang

2012-01-01

Full Text Available Germanium antimony (Ge-Sb thin films with tuneable compositions have been fabricated on SiO2/Si, borosilicate glass, and quartz glass substrates by chemical vapour deposition (CVD. Deposition takes place at atmospheric pressure using metal chloride precursors at reaction temperatures between 750 and 875°C. The compositions and structures of these thin films have been characterized by micro-Raman, scanning electron microscope (SEM with energy dispersive X-ray analysis (EDX and X-ray diffraction (XRD techniques. A prototype Ge-Sb thin film phase-change memory device has been fabricated and reversible threshold and phase-change switching demonstrated electrically, with a threshold voltage of 2.2–2.5 V. These CVD-grown Ge-Sb films show promise for applications such as phase-change memory and optical, electronic, and plasmonic switching.

All-printed paper memory

KAUST Repository

Lien, Derhsien

2014-08-26

We report the memory device on paper by means of an all-printing approach. Using a sequence of inkjet and screen-printing techniques, a simple metal-insulator-metal device structure is fabricated on paper as a resistive random access memory with a potential to reach gigabyte capacities on an A4 paper. The printed-paper-based memory devices (PPMDs) exhibit reproducible switching endurance, reliable retention, tunable memory window, and the capability to operate under extreme bending conditions. In addition, the PBMD can be labeled on electronics or living objects for multifunctional, wearable, on-skin, and biocompatible applications. The disposability and the high-security data storage of the paper-based memory are also demonstrated to show the ease of data handling, which are not achievable for regular silicon-based electronic devices. We envision that the PPMDs manufactured by this cost-effective and time-efficient all-printing approach would be a key electronic component to fully activate a paper-based circuit and can be directly implemented in medical biosensors, multifunctional devices, and self-powered systems. © 2014 American Chemical Society.

Principles of Transactional Memory The Theory

CERN Document Server

Guerraoui, Rachid

2010-01-01

Transactional memory (TM) is an appealing paradigm for concurrent programming on shared memory architectures. With a TM, threads of an application communicate, and synchronize their actions, via in-memory transactions. Each transaction can perform any number of operations on shared data, and then either commit or abort. When the transaction commits, the effects of all its operations become immediately visible to other transactions; when it aborts, however, those effects are entirely discarded. Transactions are atomic: programmers get the illusion that every transaction executes all its operati

Algorithm for Optimizing Bipolar Interconnection Weights with Applications in Associative Memories and Multitarget Classification

Science.gov (United States)

Chang, Shengjiang; Wong, Kwok-Wo; Zhang, Wenwei; Zhang, Yanxin

1999-08-01

An algorithm for optimizing a bipolar interconnection weight matrix with the Hopfield network is proposed. The effectiveness of this algorithm is demonstrated by computer simulation and optical implementation. In the optical implementation of the neural network the interconnection weights are biased to yield a nonnegative weight matrix. Moreover, a threshold subchannel is added so that the system can realize, in real time, the bipolar weighted summation in a single channel. Preliminary experimental results obtained from the applications in associative memories and multitarget classification with rotation invariance are shown.

Breaking the memory wall in MonetDB

NARCIS (Netherlands)

P.A. Boncz (Peter); M.L. Kersten (Martin); S. Manegold (Stefan)

2008-01-01

textabstractIn the past decades, advances in speed of commodity CPUs have far outpaced advances in RAM latency. Main-memory access has therefore become a performance bottleneck for many computer applications; a phenomenon that is widely known as the "memory wall." In this paper, we report how

The application of shape memory actuators in anthropomorphic upper limb prostheses.

Science.gov (United States)

dos Santos, Christian Mariani Lucas; da Cunha, Fransergio Leite; Dynnikov, Vladimir Ivanovitch

2003-05-01

In recent years, single crystal Cu-Al-Ni alloys with shape memory behavior (SMB) became generally commercialized. They achieved the level of extended application, including upper limb human prosthesis with anthropomorphic characteristics. An actuator based in single crystal Cu-Al-Ni alloy was tested as a prototype for prosthetic actuators. Their thermal cycle times remarkably define the actuator dynamics and the idea of preheating to reduce its response time was tested. To elaborate the heating conditions, the chemical composition of martensitic and austenitic single crystals, Cu-Al-Ni alloy samples were examined. The dynamic response of a martensitic actuator made with SMB and the power consumed with preheating was analyzed. It demonstrates that the presence of more elements in alloys may be fundamental to displace the heating diagram and to reduce the power consumed.

Applicability of the Rivermead Behavioural Memory Test – Third Edition (RBMT-3) in Korsakoff’s syndrome and chronic alcoholics

Science.gov (United States)

Wester, Arie J; van Herten, Judith C; Egger, Jos IM; Kessels, Roy PC

2013-01-01

Purpose To examine the applicability of the newly developed Rivermead Behavioural Memory Test – Third Edition (RBMT-3) as an ecologically-valid memory test in patients with alcohol-related cognitive disorders. Patients and methods An authorized Dutch translation of the RBMT-3 was developed, equivalent to the UK version, and administered to a total of 151 participants – 49 patients with amnesia due to alcoholic Korsakoff’s syndrome, 49 patients with cognitive impairment and a history of chronic alcoholism, not fulfilling the Korsakoff criteria, and 53 healthy controls. Between-group comparisons were made at subtest level, and the test’s diagnostic accuracy was determined. Results Korsakoff patients performed worse than controls on all RBMT-3 subtests (all P-values Korsakoff patients and the controls after delayed testing. The RBMT-3 had good sensitivity and adequate specificity. Conclusion The RBMT-3 is a valid test battery to demonstrate everyday memory deficits in Korsakoff patients and non-Korsakoff patients with alcohol abuse disorder. Korsakoff patients showed an impaired performance on subtests relying on orientation, contextual memory and delayed testing. Our findings provide valuable information for treatment planning and adjustment in patients with alcohol-related cognitive impairments. PMID:23818787

Self-selection bipolar resistive switching phenomena observed in NbON/NbN bilayer for cross-bar array memory applications

International Nuclear Information System (INIS)

Kim, Hee-Dong; Yun, Min Ju; Kim, Tae Geun

2014-01-01

In this letter, to integrate bipolar resistive switching cells into cross bar array (CBA) structure, we study one-selector (1S) and one-resistor (1R) behavior of a niobium oxynitride (NbON) and niobium nitride (NbN) bilayer for the applications of resistive random access memory (RRAM). In this structure, a NbN layer exhibits bipolar switching characteristics while a NbON layer acts as the selector. The NbN-based 1S1R devices within a single RRAM memory cell can be directly integrated into a CBA structure without the need of extra diodes; this can significantly reduce the fabrication complexity

Investigation of Hafnium oxide/Copper resistive memory for advanced encryption applications

Science.gov (United States)

Briggs, Benjamin D.

The Advanced Encryption Standard (AES) is a widely used encryption algorithm to protect data and communications in today's digital age. Modern AES CMOS implementations require large amounts of dedicated logic and must be tuned for either performance or power consumption. A high throughput, low power, and low die area AES implementation is required in the growing mobile sector. An emerging non-volatile memory device known as resistive memory (ReRAM) is a simple metal-insulator-metal capacitor device structure with the ability to switch between two stable resistance states. Currently, ReRAM is targeted as a non-volatile memory replacement technology to eventually replace flash. Its advantages over flash include ease of fabrication, speed, and lower power consumption. In addition to memory, ReRAM can also be used in advanced logic implementations given its purely resistive behavior. The combination of a new non-volatile memory element ReRAM along with high performance, low power CMOS opens new avenues for logic implementations. This dissertation will cover the design and process implementation of a ReRAM-CMOS hybrid circuit, built using IBM's 10LPe process, for the improvement of hardware AES implementations. Further the device characteristics of ReRAM, specifically the HfO2/Cu memory system, and mechanisms for operation are not fully correlated. Of particular interest to this work is the role of material properties such as the stoichiometry, crystallinity, and doping of the HfO2 layer and their effect on the switching characteristics of resistive memory. Material properties were varied by a combination of atomic layer deposition and reactive sputtering of the HfO2 layer. Several studies will be discussed on how the above mentioned material properties influence switching parameters, and change the underlying physics of device operation.

Breaking the memory wall in MonetDB

NARCIS (Netherlands)

Boncz, P.A.; Kersten, M.L.; Manegold, S.

2008-01-01

In the past decades, advances in speed of commodity CPUs have far outpaced advances in RAM latency. Main-memory access has therefore become a performance bottleneck for many computer applications; a phenomenon that is widely known as the "memory wall." In this paper, we report how research around

Three-terminal resistive switching memory in a transparent vertical-configuration device

International Nuclear Information System (INIS)

Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies

Magnetic Shape Memory Alloy Actuator for Instrument Applications

Data.gov (United States)

National Aeronautics and Space Administration — This project will develop a simple actuator based on magnetic shape memory alloy (MSMA), a novel new family of crystalline materials which exhibit strain deformation...

Unraveling Network-induced Memory Contention: Deeper Insights with Machine Learning

International Nuclear Information System (INIS)

Groves, Taylor Liles; Grant, Ryan; Gonzales, Aaron; Arnold, Dorian

2017-01-01

Remote Direct Memory Access (RDMA) is expected to be an integral communication mechanism for future exascale systems enabling asynchronous data transfers, so that applications may fully utilize CPU resources while simultaneously sharing data amongst remote nodes. We examine Network-induced Memory Contention (NiMC) on Infiniband networks. We expose the interactions between RDMA, main-memory and cache, when applications and out-of-band services compete for memory resources. We then explore NiMCs resulting impact on application-level performance. For a range of hardware technologies and HPC workloads, we quantify NiMC and show that NiMCs impact grows with scale resulting in up to 3X performance degradation at scales as small as 8K processes even in applications that previously have been shown to be performance resilient in the presence of noise. In addition, this work examines the problem of predicting NiMC's impact on applications by leveraging machine learning and easily accessible performance counters. This approach provides additional insights about the root cause of NiMC and facilitates dynamic selection of potential solutions. Finally, we evaluated three potential techniques to reduce NiMCs impact, namely hardware offloading, core reservation and network throttling.

A Survey of Phase Change Memory Systems

Institute of Scientific and Technical Information of China (English)

夏飞; 蒋德钧; 熊劲; 孙凝晖

2015-01-01

As the scaling of applications increases, the demand of main memory capacity increases in order to serve large working set. It is difficult for DRAM (dynamic random access memory) based memory system to satisfy the memory capacity requirement due to its limited scalability and high energy consumption. Compared to DRAM, PCM (phase change memory) has better scalability, lower energy leakage, and non-volatility. PCM memory systems have become a hot topic of academic and industrial research. However, PCM technology has the following three drawbacks: long write latency, limited write endurance, and high write energy, which raises challenges to its adoption in practice. This paper surveys architectural research work to optimize PCM memory systems. First, this paper introduces the background of PCM. Then, it surveys research efforts on PCM memory systems in performance optimization, lifetime improving, and energy saving in detail, respectively. This paper also compares and summarizes these techniques from multiple dimensions. Finally, it concludes these optimization techniques and discusses possible research directions of PCM memory systems in future.

The MUSOS (MUsic SOftware System) Toolkit: A computer-based, open source application for testing memory for melodies.

Science.gov (United States)

Rainsford, M; Palmer, M A; Paine, G

2018-04-01

Despite numerous innovative studies, rates of replication in the field of music psychology are extremely low (Frieler et al., 2013). Two key methodological challenges affecting researchers wishing to administer and reproduce studies in music cognition are the difficulty of measuring musical responses, particularly when conducting free-recall studies, and access to a reliable set of novel stimuli unrestricted by copyright or licensing issues. In this article, we propose a solution for these challenges in computer-based administration. We present a computer-based application for testing memory for melodies. Created using the software Max/MSP (Cycling '74, 2014a), the MUSOS (Music Software System) Toolkit uses a simple modular framework configurable for testing common paradigms such as recall, old-new recognition, and stem completion. The program is accompanied by a stimulus set of 156 novel, copyright-free melodies, in audio and Max/MSP file formats. Two pilot tests were conducted to establish the properties of the accompanying stimulus set that are relevant to music cognition and general memory research. By using this software, a researcher without specialist musical training may administer and accurately measure responses from common paradigms used in the study of memory for music.

Investigation of fast initialization of spacecraft bubble memory systems

Science.gov (United States)

Looney, K. T.; Nichols, C. D.; Hayes, P. J.

1984-01-01

Bubble domain technology offers significant improvement in reliability and functionality for spacecraft onboard memory applications. In considering potential memory systems organizations, minimization of power in high capacity bubble memory systems necessitates the activation of only the desired portions of the memory. In power strobing arbitrary memory segments, a capability of fast turn on is required. Bubble device architectures, which provide redundant loop coding in the bubble devices, limit the initialization speed. Alternate initialization techniques are investigated to overcome this design limitation. An initialization technique using a small amount of external storage is demonstrated.

Distributed-Memory Fast Maximal Independent Set

Energy Technology Data Exchange (ETDEWEB)

Kanewala Appuhamilage, Thejaka Amila J.; Zalewski, Marcin J.; Lumsdaine, Andrew

2017-09-13

The Maximal Independent Set (MIS) graph problem arises in many applications such as computer vision, information theory, molecular biology, and process scheduling. The growing scale of MIS problems suggests the use of distributed-memory hardware as a cost-effective approach to providing necessary compute and memory resources. Luby proposed four randomized algorithms to solve the MIS problem. All those algorithms are designed focusing on shared-memory machines and are analyzed using the PRAM model. These algorithms do not have direct efficient distributed-memory implementations. In this paper, we extend two of Luby’s seminal MIS algorithms, “Luby(A)” and “Luby(B),” to distributed-memory execution, and we evaluate their performance. We compare our results with the “Filtered MIS” implementation in the Combinatorial BLAS library for two types of synthetic graph inputs.

Verification of Memory Performance Contracts with KeY

OpenAIRE

Engel, Christian

2007-01-01

Determining the worst case memory consumption is an important issue for real-time Java applications. This work describes a methodology for formally verifying worst case memory performance constraints and proposes extensions to Java Modeling Language (JML) facilitating better verifiability of JML performance specifications.

Overview of radiation effects on emerging non-volatile memory technologies

Directory of Open Access Journals (Sweden)

Fetahović Irfan S.

2017-01-01

Full Text Available In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. 171007

Working Memory and Hearing Aid Processing: Literature Findings, Future Directions, and Clinical Applications.

Science.gov (United States)

Souza, Pamela; Arehart, Kathryn; Neher, Tobias

2015-01-01

Working memory-the ability to process and store information-has been identified as an important aspect of speech perception in difficult listening environments. Working memory can be envisioned as a limited-capacity system which is engaged when an input signal cannot be readily matched to a stored representation or template. This "mismatch" is expected to occur more frequently when the signal is degraded. Because working memory capacity varies among individuals, those with smaller capacity are expected to demonstrate poorer speech understanding when speech is degraded, such as in background noise. However, it is less clear whether (and how) working memory should influence practical decisions, such as hearing treatment. Here, we consider the relationship between working memory capacity and response to specific hearing aid processing strategies. Three types of signal processing are considered, each of which will alter the acoustic signal: fast-acting wide-dynamic range compression, which smooths the amplitude envelope of the input signal; digital noise reduction, which may inadvertently remove speech signal components as it suppresses noise; and frequency compression, which alters the relationship between spectral peaks. For fast-acting wide-dynamic range compression, a growing body of data suggests that individuals with smaller working memory capacity may be more susceptible to such signal alterations, and may receive greater amplification benefit with "low alteration" processing. While the evidence for a relationship between wide-dynamic range compression and working memory appears robust, the effects of working memory on perceptual response to other forms of hearing aid signal processing are less clear cut. We conclude our review with a discussion of the opportunities (and challenges) in translating information on individual working memory into clinical treatment, including clinically feasible measures of working memory.

Prospective memory, working memory, retrospective memory and self-rated memory performance in persons with intellectual disability

OpenAIRE

Levén, Anna; Lyxell, Björn; Andersson, Jan; Danielsson, Henrik; Rönnberg, Jerker

2008-01-01

The purpose of the present study was to examine the relationship between prospective memory, working memory, retrospective memory and self-rated memory capacity in adults with and without intellectual disability. Prospective memory was investigated by means of a picture-based task. Working memory was measured as performance on span tasks. Retrospective memory was scored as recall of subject performed tasks. Self-ratings of memory performance were based on the prospective and retrospective mem...

The limitations of our knowledge about social influences on memories of sexual abuse over the long-term

DEFF Research Database (Denmark)

Koppel, Jonathan Mark; Berntsen, Dorthe

2015-01-01

Fagin, Cyr, and Hirst provide an informed and insightful application of the social memory literature to the important question of how memories of sexual abuse may be re-shaped, both over the short term and long term, by communication with others, as well as with oneself. In the following commentary......, we outline several respects in which we believe that the application of this literature to memories of sexual abuse, particularly over the long term, is still open to debate. In particular, we focus on induced forgetting and social contagion for such memories, as well as the application of the social...... memory literature to intrusive involuntary memories of trauma. Where applicable, we offer suggestions for future research that may contribute towards addressing the limitations of the existing literature....

Recollection Rejection: How Children Edit Their False Memories.

Science.gov (United States)

Brainerd, C. J.; Reyna, V. F.

2002-01-01

Presents new measure of children's use of an editing operation that suppresses false memories by accessing verbatim traces of true events. Application of the methodology showed that false-memory editing increased dramatically between early and middle childhood. Measure reacted appropriately to experimental manipulations. Developmental reductions…

Memory deficit in patients with schizophrenia and posttraumatic stress disorder: relational vs item-specific memory

Directory of Open Access Journals (Sweden)

Jung W

2016-05-01

Full Text Available Wookyoung Jung,1 Seung-Hwan Lee1,2 1Clinical Emotions and Cognition Research Laboratory, Department of Psychiatry, Inje University, Ilsan-Paik Hospital, 2Department of Psychiatry, Inje University, Ilsan-Paik Hospital, Goyang, Korea Abstract: It has been well established that patients with schizophrenia have impairments in cognitive functioning and also that patients who experienced traumatic events suffer from cognitive deficits. Of the cognitive deficits revealed in schizophrenia or posttraumatic stress disorder (PTSD patients, the current article provides a brief review of deficit in episodic memory, which is highly predictive of patients’ quality of life and global functioning. In particular, we have focused on studies that compared relational and item-specific memory performance in schizophrenia and PTSD, because measures of relational and item-specific memory are considered the most promising constructs for immediate tangible development of clinical trial paradigm. The behavioral findings of schizophrenia are based on the tasks developed by the Cognitive Neuroscience Treatment Research to Improve Cognition in Schizophrenia (CNTRICS initiative and the Cognitive Neuroscience Test Reliability and Clinical Applications for Schizophrenia (CNTRACS Consortium. The findings we reviewed consistently showed that schizophrenia and PTSD are closely associated with more severe impairments in relational memory compared to item-specific memory. Candidate brain regions involved in relational memory impairment in schizophrenia and PTSD are also discussed. Keywords: schizophrenia, posttraumatic stress disorder, episodic memory deficit, relational memory, item-specific memory, prefrontal cortex, hippocampus

Memory transition between communicating agents

Directory of Open Access Journals (Sweden)

Elena FELL

2012-01-01

Full Text Available What happens to a memory when it has been externalised and embodied but has not reached its addressee yet? A letter that has been written but has not been read, a monument before it is unveiled or a Neolithic tool buried in the ground – all these objects harbour human memories engrained in their physicality; messages intended for those who will read the letter, admire the monument and hold the tool. According to Ilyenkov’s theory of objective idealism, the conscious and wilful input encoded in all manmade objects as the ‘ideal’ has an objective existence, independent from the author, but this existence lasts only while memories are shared between communicating parties. If all human minds were absent from the world for a period of time, the ‘ideal’, or memories, would cease to exist. They would spring back to existence, however, once humans re-entered the world. Ilyenkov’s analysis of memories existing outside an individual human consciousness is informative and thorough but, following his line of thought, we would have to accept an ontological gap in the process of memory acquisition, storage and transmission. If there is a period, following memory acquisition and preceding its transmission, when memories plainly do not exist, then each time a new reader, spectator or user perceives them, he or she must create the author’s memories ex nihilo. Bergson’s theory of duration and intuition can help us to resolve this paradox.This paper will explore the ontological characteristics of memory passage in communication taken at different stages of the process. There will be an indication of how the findings of this investigation could be applicable to concrete cases of memory transmission. In particular, this concerns intergenerational communication, technological memory, the use of digital devices and the Internet.

Synthesis of shape memory alloys using electrodeposition

Science.gov (United States)

Hymer, Timothy Roy

Shape memory alloys are used in a variety of applications. The area of micro-electro-mechanical systems (MEMS) is a developing field for thin film shape memory alloys for making actuators, valves and pumps. Until recently thin film shape memory alloys could only be made by rapid solidification or sputtering techniques which have the disadvantage of being "line of sight". At the University of Missouri-Rolla, electrolytic techniques have been developed that allow the production of shape memory alloys in thin film form. The advantages of this techniques are in-situ, non "line of sight" and the ability to make differing properties of the shape memory alloys from one bath. This research focused on the electrodeposition of In-Cd shape memory alloys. The primary objective was to characterize the electrodeposited shape memory effect for an electrodeposited shape memory alloy. The effect of various operating parameters such as peak current density, temperature, pulsing, substrate and agitation were investigated and discussed. The electrodeposited alloys were characterized by relative shape memory effect, phase transformation, morphology and phases present. Further tests were performed to optimize the shape memory by the use of a statistically designed experiment. An optimized shape memory effect for an In-Cd alloy is reported for the conditions of the experiments.

A memory efficient user interface for CLIPS micro-computer applications

Science.gov (United States)

Sterle, Mark E.; Mayer, Richard J.; Jordan, Janice A.; Brodale, Howard N.; Lin, Min-Jin

1990-01-01

The goal of the Integrated Southern Pine Beetle Expert System (ISPBEX) is to provide expert level knowledge concerning treatment advice that is convenient and easy to use for Forest Service personnel. ISPBEX was developed in CLIPS and delivered on an IBM PC AT class micro-computer, operating with an MS/DOS operating system. This restricted the size of the run time system to 640K. In order to provide a robust expert system, with on-line explanation, help, and alternative actions menus, as well as features that allow the user to back up or execute 'what if' scenarios, a memory efficient menuing system was developed to interface with the CLIPS programs. By robust, we mean an expert system that (1) is user friendly, (2) provides reasonable solutions for a wide variety of domain specific problems, (3) explains why some solutions were suggested but others were not, and (4) provides technical information relating to the problem solution. Several advantages were gained by using this type of user interface (UI). First, by storing the menus on the hard disk (instead of main memory) during program execution, a more robust system could be implemented. Second, since the menus were built rapidly, development time was reduced. Third, the user may try a new scenario by backing up to any of the input screens and revising segments of the original input without having to retype all the information. And fourth, asserting facts from the menus provided for a dynamic and flexible fact base. This UI technology has been applied successfully in expert systems applications in forest management, agriculture, and manufacturing. This paper discusses the architecture of the UI system, human factors considerations, and the menu syntax design.

Solid-state Memory on Flexible Silicon for Future Electronic Applications

KAUST Repository

Ghoneim, Mohamed

2016-11-01

Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion

Synthetic vision and memory for autonomous virtual humans

OpenAIRE

PETERS, CHRISTOPHER; O'SULLIVAN, CAROL ANN

2002-01-01

PUBLISHED A memory model based on ?stage theory?, an influential concept of memory from the field of cognitive psychology, is presented for application to autonomous virtual humans. The virtual human senses external stimuli through a synthetic vision system. The vision system incorporates multiple modes of vision in order to accommodate a perceptual attention approach. The memory model is used to store perceived and attended object information at different stages in a filtering...

Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications

Energy Technology Data Exchange (ETDEWEB)

Huang, Meiyu Stella [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); Globalfoundries Singapore Pte Ltd, 60 Woodlands Industrial Park D, 738406 (Singapore); Suresh, Vignesh [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); Agency for Science, Technology and Research - A*Star, Institute of Materials Research and Engineering (IMRE), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Chan, Mei Yin [School of Materials Science and Engineering (MSE), Nanyang Technological University (NTU), 50 Nanyang Avenue, 639798 (Singapore); Ma, Yu Wei [Globalfoundries Singapore Pte Ltd, 60 Woodlands Industrial Park D, 738406 (Singapore); Lee, Pooi See [School of Materials Science and Engineering (MSE), Nanyang Technological University (NTU), 50 Nanyang Avenue, 639798 (Singapore); Krishnamoorthy, Sivashankar [Agency for Science, Technology and Research - A*Star, Institute of Materials Research and Engineering (IMRE), #08-03, 2 Fusionopolis Way, Innovis, 138634 (Singapore); Science et Analyse des Materiaux Unit (SAM), Centre de Recherche Public-Gabriel Lippmann, 41, rue du Brill, Belvaux, 4422 (Luxembourg); Srinivasan, M.P., E-mail: srinivasan.madapusi@rmit.edu.au [Department of Chemical and Biomolecular Engineering, National University of Singapore, Block E5, 4 Engineering Drive 4, 117576 (Singapore); School of Engineering, RMIT University, Building 10, Level 11, Room 14, 376-392 Swanston Street, Melbourne, Victoria, 3001 (Australia)

2017-01-15

A simple and low-cost process of embedding metal nanocrystals as charge storage centers within a dielectric is demonstrated to address leakage issues associated with the scaling of the tunnelling oxide in flash memories. Metal nanocrystals with high work functions (nickel, platinum and palladium) were prepared as embedded species in methyl siloxane spin-on-glass (SOG) films on silicon substrates. Sub-10 nm-sized, well-isolated, uniformly distributed, multi-layered nanocrystals with high particle densities (10{sup 11}–10{sup 12} cm{sup −2}) were formed in the films by thermal curing of the spin-coated SOG films containing the metal precursors. Capacitance-Voltage measurements performed on metal-insulator-semiconductor capacitors with the SOG films show that the presence of metal nanocrystals enhanced the memory window of the films to 2.32 V at low operating voltages of ±5 V. These SOG films demonstrated the ability to store both holes and electrons. Capacitance-time measurements show good charge retention of more than 75% after 10{sup 4} s of discharging. This work demonstrates the applicability of the low-cost in-situ sol-gel preparation in contrast to conventional methods that involve multiple and expensive processing steps. - Highlights: • Sub-10 nm sized, well-isolated, uniformly distributed nanoparticle based charge trap memories. • Preparation of multi-layer high work function metal nanocrystals at low cost. • Large memory window of 2.32 V at low operating voltages of ±5 V. • Good charge retention of more than 90% and 75% after 10{sup 3} and 10{sup 4} s of discharging respectively. • Use of a 3 nm thick tunnelling oxide in compliance with ITRS specifications.

Multi-layered metal nanocrystals in a sol-gel spin-on-glass matrix for flash memory applications

International Nuclear Information System (INIS)

Huang, Meiyu Stella; Suresh, Vignesh; Chan, Mei Yin; Ma, Yu Wei; Lee, Pooi See; Krishnamoorthy, Sivashankar; Srinivasan, M.P.

2017-01-01

A simple and low-cost process of embedding metal nanocrystals as charge storage centers within a dielectric is demonstrated to address leakage issues associated with the scaling of the tunnelling oxide in flash memories. Metal nanocrystals with high work functions (nickel, platinum and palladium) were prepared as embedded species in methyl siloxane spin-on-glass (SOG) films on silicon substrates. Sub-10 nm-sized, well-isolated, uniformly distributed, multi-layered nanocrystals with high particle densities (10"1"1–10"1"2 cm"−"2) were formed in the films by thermal curing of the spin-coated SOG films containing the metal precursors. Capacitance-Voltage measurements performed on metal-insulator-semiconductor capacitors with the SOG films show that the presence of metal nanocrystals enhanced the memory window of the films to 2.32 V at low operating voltages of ±5 V. These SOG films demonstrated the ability to store both holes and electrons. Capacitance-time measurements show good charge retention of more than 75% after 10"4 s of discharging. This work demonstrates the applicability of the low-cost in-situ sol-gel preparation in contrast to conventional methods that involve multiple and expensive processing steps. - Highlights: • Sub-10 nm sized, well-isolated, uniformly distributed nanoparticle based charge trap memories. • Preparation of multi-layer high work function metal nanocrystals at low cost. • Large memory window of 2.32 V at low operating voltages of ±5 V. • Good charge retention of more than 90% and 75% after 10"3 and 10"4 s of discharging respectively. • Use of a 3 nm thick tunnelling oxide in compliance with ITRS specifications.

High-Density Stacked Ru Nanocrystals for Nonvolatile Memory Application

International Nuclear Information System (INIS)

Ping, Mao; Zhi-Gang, Zhang; Li-Yang, Pan; Jun, Xu; Pei-Yi, Chen

2009-01-01

Stacked ruthenium (Ru) nanocrystals (NCs) are formed by rapid thermal annealing for the whole gate stacks and embedded in memory structure, which is compatible with conventional CMOS technology. Ru NCs with high density (3 × 10 12 cm −2 ), small size (2–4 nm) and good uniformity both in aerial distribution and morphology are formed. Attributed to the higher surface trap density, a memory window of 5.2 V is obtained with stacked Ru NCs in comparison to that of 3.5 V with single-layer samples. The stacked Ru NCs device also exhibits much better retention performance because of Coulomb blockade and vertical uniformity between stacked Ru NCs

An Investigation of Unified Memory Access Performance in CUDA

Science.gov (United States)

Landaverde, Raphael; Zhang, Tiansheng; Coskun, Ayse K.; Herbordt, Martin

2015-01-01

Managing memory between the CPU and GPU is a major challenge in GPU computing. A programming model, Unified Memory Access (UMA), has been recently introduced by Nvidia to simplify the complexities of memory management while claiming good overall performance. In this paper, we investigate this programming model and evaluate its performance and programming model simplifications based on our experimental results. We find that beyond on-demand data transfers to the CPU, the GPU is also able to request subsets of data it requires on demand. This feature allows UMA to outperform full data transfer methods for certain parallel applications and small data sizes. We also find, however, that for the majority of applications and memory access patterns, the performance overheads associated with UMA are significant, while the simplifications to the programming model restrict flexibility for adding future optimizations. PMID:26594668

Working Memory for Linguistic and Non-linguistic Manual Gestures: Evidence, Theory, and Application.

Science.gov (United States)

Rudner, Mary

2018-01-01

Linguistic manual gestures are the basis of sign languages used by deaf individuals. Working memory and language processing are intimately connected and thus when language is gesture-based, it is important to understand related working memory mechanisms. This article reviews work on working memory for linguistic and non-linguistic manual gestures and discusses theoretical and applied implications. Empirical evidence shows that there are effects of load and stimulus degradation on working memory for manual gestures. These effects are similar to those found for working memory for speech-based language. Further, there are effects of pre-existing linguistic representation that are partially similar across language modalities. But above all, deaf signers score higher than hearing non-signers on an n-back task with sign-based stimuli, irrespective of their semantic and phonological content, but not with non-linguistic manual actions. This pattern may be partially explained by recent findings relating to cross-modal plasticity in deaf individuals. It suggests that in linguistic gesture-based working memory, semantic aspects may outweigh phonological aspects when processing takes place under challenging conditions. The close association between working memory and language development should be taken into account in understanding and alleviating the challenges faced by deaf children growing up with cochlear implants as well as other clinical populations.

Periodic Cellular Structure Technology for Shape Memory Alloys

Science.gov (United States)

Chen, Edward Y.

2015-01-01

Shape memory alloys are being considered for a wide variety of adaptive components for engine and airframe applications because they can undergo large amounts of strain and then revert to their original shape upon heating or unloading. Transition45 Technologies, Inc., has developed an innovative periodic cellular structure (PCS) technology for shape memory alloys that enables fabrication of complex bulk configurations, such as lattice block structures. These innovative structures are manufactured using an advanced reactive metal casting technology that offers a relatively low cost and established approach for constructing near-net shape aerospace components. Transition45 is continuing to characterize these structures to determine how best to design a PCS to better exploit the use of shape memory alloys in aerospace applications.

Analyzing nitrogen concentration using carrier illumination (CI) technology for DPN ultra-thin gate oxide

International Nuclear Information System (INIS)

Li, W.S.; Wu, Bill; Fan, Aki; Kuo, C.W.; Segovia, M.; Kek, H.A.

2005-01-01

Nitrogen concentration in the gate oxide plays a key role for 90 nm and below ULSI technology. Techniques like secondary ionization mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS) are commonly used for understanding N concentration. This paper describes the application of the carrier illuminationTM (CI) technique to measure the nitrogen concentration in ultra-thin gate oxides. A set of ultra-thin gate oxide wafers with different DPN (decoupled plasma nitridation) treatment conditions were measured using the CI technique. The CI signal has excellent correlation with the N concentration as measured by XPS

Towards realising high-speed large-bandwidth quantum memory

Institute of Scientific and Technical Information of China (English)

SHI BaoSen; DING DongSheng

2016-01-01

Indispensable for quantum communication and quantum computation,quantum memory executes on demand storage and retrieval of quantum states such as those of a single photon,an entangled pair or squeezed states.Among the various forms of quantum memory,Raman quantum memory has advantages forits broadband and high-speed characteristics,which results in a huge potential for applications in quantum networks and quantum computation.However,realising Raman quantum memory with true single photons and photonic entanglementis challenging.In this review,after briefly introducing the main benchmarks in the development of quantum memory and describing the state of the art,we focus on our recent experimental progress inquantum memorystorage of quantum states using the Raman scheme.

Working memory and hearing aid processing: Literature findings, future directions, and clinical applications

Directory of Open Access Journals (Sweden)

Pamela eSouza

2015-12-01

Full Text Available Working memory—the ability to process and store information—has been identified as an important aspect of speech perception in difficult listening environments. Working memory can be envisioned as a limited-capacity system which is engaged when an input signal cannot be readily matched to a stored representation or template. This mismatch is expected to occur more frequently when the signal is degraded. Because working memory capacity varies among individuals, those with smaller capacity are expected to demonstrate poorer speech understanding when speech is degraded, such as in background noise. However, it is less clear whether (and how working memory should influence practical decisions, such as hearing treatment. Here, we consider the relationship between working memory capacity and response to specific hearing aid processing strategies. Three types of signal processing are considered, each of which will alter the acoustic signal: fast-acting wide-dynamic range compression, which smooths the amplitude envelope of the input signal; digital noise reduction, which may inadvertently remove speech signal components as it suppresses noise; and frequency compression, which alters the relationship between spectral peaks. For fast-acting wide-dynamic range compression, a growing body of data suggests that individuals with smaller working memory capacity may be more susceptible to such signal alterations, and may receive greater amplification benefit with low alteration processing. While the evidence for a relationship between wide-dynamic range compression and working memory appears robust, the effects of working memory on perceptual response to other forms of hearing aid signal processing are less clear cut. We conclude our review with a discussion of the opportunities (and challenges in translating information on individual working memory into clinical treatment, including clinically-feasible measures of working memory.

Comparing Predictive Accuracy under Long Memory - With an Application to Volatility Forecasting

DEFF Research Database (Denmark)

Kruse, Robinson; Leschinski, Christian; Will, Michael

This paper extends the popular Diebold-Mariano test to situations when the forecast error loss differential exhibits long memory. It is shown that this situation can arise frequently, since long memory can be transmitted from forecasts and the forecast objective to forecast error loss differentials....... The nature of this transmission mainly depends on the (un)biasedness of the forecasts and whether the involved series share common long memory. Further results show that the conventional Diebold-Mariano test is invalidated under these circumstances. Robust statistics based on a memory and autocorrelation...... extensions of the heterogeneous autoregressive model. While we find that forecasts improve significantly if jumps in the log-price process are considered separately from continuous components, improvements achieved by the inclusion of implied volatility turn out to be insignificant in most situations....

Axially Modulated Clamped-Guided Arch Resonator for Memory and Logic Applications

KAUST Repository

Hafiz, Md Abdullah Al; Tella, Sherif Adekunle; Alcheikh, Nouha; Fariborzi, Hossein; Younis, Mohammad I.

2017-01-01

We experimentally demonstrate memory and logic devices based on an axially modulated clamped-guided arch resonator. The device are electrostatically actuated and capacitively sensed, while the resonance frequency modulation is achieved through an axial electrostatic force from the guided side of the clamped-guided arch microbeam. We present two case studies: first, a dynamic memory based on the nonlinear frequency response of the resonator, and second, a reprogrammable two-input logic gate based on the linear frequency modulation of the resonator. These devices show energy cost per memory/logic operation in pJ, are fully compatible with CMOS fabrication processes, have the potential for on-chip system integration, and operate at room temperature.

Axially Modulated Clamped-Guided Arch Resonator for Memory and Logic Applications

KAUST Repository

Hafiz, Md Abdullah Al

2017-11-03

We experimentally demonstrate memory and logic devices based on an axially modulated clamped-guided arch resonator. The device are electrostatically actuated and capacitively sensed, while the resonance frequency modulation is achieved through an axial electrostatic force from the guided side of the clamped-guided arch microbeam. We present two case studies: first, a dynamic memory based on the nonlinear frequency response of the resonator, and second, a reprogrammable two-input logic gate based on the linear frequency modulation of the resonator. These devices show energy cost per memory/logic operation in pJ, are fully compatible with CMOS fabrication processes, have the potential for on-chip system integration, and operate at room temperature.

Silent store detection and recording in memory storage

Energy Technology Data Exchange (ETDEWEB)

Bose, Pradip; Cher, Chen-Yong; Nair, Ravi

2017-03-14

An aspect includes receiving a write request that includes a memory address and write data. Stored data is read from a memory location at the memory address. Based on determining that the memory location was not previously modified, the stored data is compared to the write data. Based on the stored data matching the write data, the write request is completed without writing the write data to the memory and a corresponding silent store bit, in a silent store bitmap is set. Based on the stored data not matching the write data, the write data is written to the memory location, the silent store bit is reset and a corresponding modified bit is set. At least one of an application and an operating system is provided access to the silent store bitmap.

Silent store detection and recording in memory storage

Energy Technology Data Exchange (ETDEWEB)

Bose, Pradip; Cher, Chen-Yong; Nair, Ravi

2017-03-07

An aspect includes receiving a write request that includes a memory address and write data. Stored data is read from a memory location at the memory address. Based on determining that the memory location was not previously modified, the stored data is compared to the write data. Based on the stored data matching the write data, the write request is completed without writing the write data to the memory and a corresponding silent store bit, in a silent store bitmap is set. Based on the stored data not matching the write data, the write data is written to the memory location, the silent store bit is reset and a corresponding modified bit is set. At least one of an application and an operating system is provided access to the silent store bitmap.

Oracle database 12c release 2 in-memory tips and techniques for maximum performance

CERN Document Server

Banerjee, Joyjeet

2017-01-01

This Oracle Press guide shows, step-by-step, how to optimize database performance and cut transaction processing time using Oracle Database 12c Release 2 In-Memory. Oracle Database 12c Release 2 In-Memory: Tips and Techniques for Maximum Performance features hands-on instructions, best practices, and expert tips from an Oracle enterprise architect. You will learn how to deploy the software, use In-Memory Advisor, build queries, and interoperate with Oracle RAC and Multitenant. A complete chapter of case studies illustrates real-world applications. • Configure Oracle Database 12c and construct In-Memory enabled databases • Edit and control In-Memory options from the graphical interface • Implement In-Memory with Oracle Real Application Clusters • Use the In-Memory Advisor to determine what objects to keep In-Memory • Optimize In-Memory queries using groups, expressions, and aggregations • Maximize performance using Oracle Exadata Database Machine and In-Memory option • Use Swingbench to create d...

All-printed paper memory

KAUST Repository

Lien, Derhsien; Kao, Zhenkai; Huang, Tenghan; Liao, Yingchih; Lee, Sichen; He, Jr-Hau

2014-01-01

. In addition, the PBMD can be labeled on electronics or living objects for multifunctional, wearable, on-skin, and biocompatible applications. The disposability and the high-security data storage of the paper-based memory are also demonstrated to show the ease

Working Memory in the Classroom: An Inside Look at the Central Executive.

Science.gov (United States)

Barker, Lauren A

2016-01-01

This article provides a review of working memory and its application to educational settings. A discussion of the varying definitions of working memory is presented. Special attention is given to the various multidisciplinary professionals who work with students with working memory deficits, and their unique understanding of the construct. Definitions and theories of working memory are briefly summarized and provide the foundation for understanding practical applications of working memory to assessment and intervention. Although definitions and models of working memory abound, there is limited consensus regarding universally accepted definitions and models. Current research indicates that developing new models of working memory may be an appropriate paradigm shift at this time. The integration of individual practitioner's knowledge regarding academic achievement, working memory and processing speed could provide a foundation for the future development of new working memory models. Future directions for research should aim to explain how tasks and behaviors are supported by the substrates of the cortico-striatal and the cerebro-cerebellar systems. Translation of neurobiological information into educational contexts will be helpful to inform all practitioners' knowledge of working memory constructs. It will also allow for universally accepted definitions and models of working memory to arise and facilitate more effective collaboration between disciplines working in educational setting.

Plasma Doping - Enabling Technology for High Dose Logic and Memory Applications

International Nuclear Information System (INIS)

Miller, T.; Godet, L.; Papasouliotis, G. D.; Singh, V.

2008-01-01

As logic and memory device dimensions shrink with each generation, there are more high dose implants at lower energies. Examples include dual poly gate (also referred to as counter-doped poly), elevated source drain and contact plug implants. Plasma Doping technology throughput and dopant profile benefits at these ultra high dose and lower energy conditions have been well established [1,2,3]. For the first time a production-worthy plasma doping implanter, the VIISta PLAD tool, has been developed with unique architecture suited for precise and repeatable dopant placement. Critical elements of the architecture include pulsed DC wafer bias, closed-loop dosimetry and a uniform low energy, high density plasma source. In this paper key performance metrics such as dose uniformity, dose repeatability and dopant profile control will be presented that demonstrate the production-worthiness of the VIISta PLAD tool for several high dose applications.

Laser memory (hologram) and coincident redundant multiplex memory (CRM-memory)

International Nuclear Information System (INIS)

Ostojic, Branko

1975-01-01

It is shown that besides the memory which remembers the object by memorising of the phases of the interferenting waves of the light (i.e. hologram) it is possible to construct the memory which remembers the object by memorising of the phases of the interferenting impulses (CFM-memory). It is given the mathematical description of the memory, based on the experimental model. Although in the paper only the technical aspect of CRM memory is given. It is mentioned the possibility that the human memory has the same principle and that the invention of CRM memory is due to cybernetical analysis of the system human eye-visual cortex

Distributed-memory matrix computations

DEFF Research Database (Denmark)

Balle, Susanne Mølleskov

1995-01-01

The main goal of this project is to investigate, develop, and implement algorithms for numerical linear algebra on parallel computers in order to acquire expertise in methods for parallel computations. An important motivation for analyzaing and investigating the potential for parallelism in these......The main goal of this project is to investigate, develop, and implement algorithms for numerical linear algebra on parallel computers in order to acquire expertise in methods for parallel computations. An important motivation for analyzaing and investigating the potential for parallelism...... in these algorithms is that many scientific applications rely heavily on the performance of the involved dense linear algebra building blocks. Even though we consider the distributed-memory as well as the shared-memory programming paradigm, the major part of the thesis is dedicated to distributed-memory architectures....... We emphasize distributed-memory massively parallel computers - such as the Connection Machines model CM-200 and model CM-5/CM-5E - available to us at UNI-C and at Thinking Machines Corporation. The CM-200 was at the time this project started one of the few existing massively parallel computers...

A Return to the "Treasure-House of Invention": Memory in the Composition Classroom.

Science.gov (United States)

Cypert, Rick

1989-01-01

Considers how memory contributes to a writer's developing capacity for self-expression. Notes that modern applications of classical memory ("memoria verborum"/natural memory and "memoria rerum"/artificial memory) enable students to generate details that flesh out their texts as well as provide meaning to those texts. (MM)

Working Memory for Linguistic and Non-linguistic Manual Gestures: Evidence, Theory, and Application

Directory of Open Access Journals (Sweden)

Mary Rudner

2018-05-01

Full Text Available Linguistic manual gestures are the basis of sign languages used by deaf individuals. Working memory and language processing are intimately connected and thus when language is gesture-based, it is important to understand related working memory mechanisms. This article reviews work on working memory for linguistic and non-linguistic manual gestures and discusses theoretical and applied implications. Empirical evidence shows that there are effects of load and stimulus degradation on working memory for manual gestures. These effects are similar to those found for working memory for speech-based language. Further, there are effects of pre-existing linguistic representation that are partially similar across language modalities. But above all, deaf signers score higher than hearing non-signers on an n-back task with sign-based stimuli, irrespective of their semantic and phonological content, but not with non-linguistic manual actions. This pattern may be partially explained by recent findings relating to cross-modal plasticity in deaf individuals. It suggests that in linguistic gesture-based working memory, semantic aspects may outweigh phonological aspects when processing takes place under challenging conditions. The close association between working memory and language development should be taken into account in understanding and alleviating the challenges faced by deaf children growing up with cochlear implants as well as other clinical populations.

A bidirectional shape memory alloy folding actuator

International Nuclear Information System (INIS)

Paik, Jamie K; Wood, Robert J

2012-01-01

This paper presents a low-profile bidirectional folding actuator based on annealed shape memory alloy sheets applicable for meso- and microscale systems. Despite the advantages of shape memory alloys—high strain, silent operation, and mechanical simplicity—their application is often limited to unidirectional operation. We present a bidirectional folding actuator that produces two opposing 180° motions. A laser-patterned nickel alloy (Inconel 600) heater localizes actuation to the folding sections. The actuator has a thin ( < 1 mm) profile, making it appropriate for use in robotic origami. Various design parameters and fabrication variants are described and experimentally explored in the actuator prototype. (paper)

Deep ART Neural Model for Biologically Inspired Episodic Memory and Its Application to Task Performance of Robots.

Science.gov (United States)

Park, Gyeong-Moon; Yoo, Yong-Ho; Kim, Deok-Hwa; Kim, Jong-Hwan

2017-06-26

Robots are expected to perform smart services and to undertake various troublesome or difficult tasks in the place of humans. Since these human-scale tasks consist of a temporal sequence of events, robots need episodic memory to store and retrieve the sequences to perform the tasks autonomously in similar situations. As episodic memory, in this paper we propose a novel Deep adaptive resonance theory (ART) neural model and apply it to the task performance of the humanoid robot, Mybot, developed in the Robot Intelligence Technology Laboratory at KAIST. Deep ART has a deep structure to learn events, episodes, and even more like daily episodes. Moreover, it can retrieve the correct episode from partial input cues robustly. To demonstrate the effectiveness and applicability of the proposed Deep ART, experiments are conducted with the humanoid robot, Mybot, for performing the three tasks of arranging toys, making cereal, and disposing of garbage.

Soluble dendrimers europium(III) β-diketonate complex for organic memory devices

International Nuclear Information System (INIS)

Wang Binbin; Fang Junfeng; Li Bin; You Han; Ma Dongge; Hong Ziruo; Li Wenlian; Su Zhongmin

2008-01-01

We report the synthesis of a soluble dendrimers europium(III) complex, tris(dibenzoylmethanato)(1,3,5-tris[2-(2'-pyridyl) benzimidazoly]methylbenzene)-europium(III), and its application in organic electrical bistable memory device. Excellent stability that ensured more than 10 6 write-read-erase-reread cycles has been performed in ambient conditions without current-induced degradation. High-density, low-cost memory, good film-firming property, fascinating thermal and morphological stability allow the application of the dendrimers europium(III) complex as an active medium in non-volatile memory devices

External-Memory Algorithms and Data Structures

DEFF Research Database (Denmark)

Arge, Lars; Zeh, Norbert

2010-01-01

The data sets involved in many modern applications are often too massive to fit in main memory of even the most powerful computers and must therefore reside on disk. Thus communication between internal and external memory, and not actual computation time, becomes the bottleneck in the computation....... This is due to the huge difference in access time of fast internal memory and slower external memory such as disks. The goal of theoretical work in the area of external memory algorithms (also called I/O algorithms or out-of-core algorithms) has been to develop algorithms that minimize the Input...... in parallel and the use of parallel disks has received a lot of theoretical attention. See below for recent surveys of theoretical results in the area of I/O-efficient algorithms. TPIE is designed to bridge the gap between the theory and practice of parallel I/O systems. It is intended to demonstrate all...

High-speed noise-free optical quantum memory

Science.gov (United States)

Kaczmarek, K. T.; Ledingham, P. M.; Brecht, B.; Thomas, S. E.; Thekkadath, G. S.; Lazo-Arjona, O.; Munns, J. H. D.; Poem, E.; Feizpour, A.; Saunders, D. J.; Nunn, J.; Walmsley, I. A.

2018-04-01

Optical quantum memories are devices that store and recall quantum light and are vital to the realization of future photonic quantum networks. To date, much effort has been put into improving storage times and efficiencies of such devices to enable long-distance communications. However, less attention has been devoted to building quantum memories which add zero noise to the output. Even small additional noise can render the memory classical by destroying the fragile quantum signatures of the stored light. Therefore, noise performance is a critical parameter for all quantum memories. Here we introduce an intrinsically noise-free quantum memory protocol based on two-photon off-resonant cascaded absorption (ORCA). We demonstrate successful storage of GHz-bandwidth heralded single photons in a warm atomic vapor with no added noise, confirmed by the unaltered photon-number statistics upon recall. Our ORCA memory meets the stringent noise requirements for quantum memories while combining high-speed and room-temperature operation with technical simplicity, and therefore is immediately applicable to low-latency quantum networks.

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-01-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-11-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

SODR Memory Control Buffer Control ASIC

Science.gov (United States)

Hodson, Robert F.

1994-01-01

The Spacecraft Optical Disk Recorder (SODR) is a state of the art mass storage system for future NASA missions requiring high transmission rates and a large capacity storage system. This report covers the design and development of an SODR memory buffer control applications specific integrated circuit (ASIC). The memory buffer control ASIC has two primary functions: (1) buffering data to prevent loss of data during disk access times, (2) converting data formats from a high performance parallel interface format to a small computer systems interface format. Ten 144 p in, 50 MHz CMOS ASIC's were designed, fabricated and tested to implement the memory buffer control function.

Spatial memory and animal movement.

Science.gov (United States)

Fagan, William F; Lewis, Mark A; Auger-Méthé, Marie; Avgar, Tal; Benhamou, Simon; Breed, Greg; LaDage, Lara; Schlägel, Ulrike E; Tang, Wen-wu; Papastamatiou, Yannis P; Forester, James; Mueller, Thomas

2013-10-01

Memory is critical to understanding animal movement but has proven challenging to study. Advances in animal tracking technology, theoretical movement models and cognitive sciences have facilitated research in each of these fields, but also created a need for synthetic examination of the linkages between memory and animal movement. Here, we draw together research from several disciplines to understand the relationship between animal memory and movement processes. First, we frame the problem in terms of the characteristics, costs and benefits of memory as outlined in psychology and neuroscience. Next, we provide an overview of the theories and conceptual frameworks that have emerged from behavioural ecology and animal cognition. Third, we turn to movement ecology and summarise recent, rapid developments in the types and quantities of available movement data, and in the statistical measures applicable to such data. Fourth, we discuss the advantages and interrelationships of diverse modelling approaches that have been used to explore the memory-movement interface. Finally, we outline key research challenges for the memory and movement communities, focusing on data needs and mathematical and computational challenges. We conclude with a roadmap for future work in this area, outlining axes along which focused research should yield rapid progress. © 2013 John Wiley & Sons Ltd/CNRS.

Reports on memorial lecture meetings on co-operative application finish of the SF cyclotron and its result reports

International Nuclear Information System (INIS)

2000-01-01

The SF cyclotron at the Institute for Nuclear Study (INS) of University of Tokyo began its co-operative application in 1997 to continue its smooth operation during 21 years reaching March, 1997. Together with improvement of INS organization on April, 1997, it was transferred to the Center for Nuclear Study School of Science, University of Tokyo, INS continued a co-operative research for two years thereafter with Tanashi campus of the High Energy Accelerator Research Organization also established on April, 1997. This co-operative research was finished without accident at the end of March, 1999, to close history of co-operative application of cyclotron during 23 years. This report contains 15 memorial lecture and convivial meeting reports at the co-operative application finish of cyclotron and some results of co-operative applications and experiments, during 23 years. (G.K.)

Episodic memory, semantic memory, and amnesia.

Science.gov (United States)

Squire, L R; Zola, S M

1998-01-01

Episodic memory and semantic memory are two types of declarative memory. There have been two principal views about how this distinction might be reflected in the organization of memory functions in the brain. One view, that episodic memory and semantic memory are both dependent on the integrity of medial temporal lobe and midline diencephalic structures, predicts that amnesic patients with medial temporal lobe/diencephalic damage should be proportionately impaired in both episodic and semantic memory. An alternative view is that the capacity for semantic memory is spared, or partially spared, in amnesia relative to episodic memory ability. This article reviews two kinds of relevant data: 1) case studies where amnesia has occurred early in childhood, before much of an individual's semantic knowledge has been acquired, and 2) experimental studies with amnesic patients of fact and event learning, remembering and knowing, and remote memory. The data provide no compelling support for the view that episodic and semantic memory are affected differently in medial temporal lobe/diencephalic amnesia. However, episodic and semantic memory may be dissociable in those amnesic patients who additionally have severe frontal lobe damage.

Memory for child sexual abuse information: simulated memory error and individual differences.

Science.gov (United States)

McWilliams, Kelly; Goodman, Gail S; Lyons, Kristen E; Newton, Jeremy; Avila-Mora, Elizabeth

2014-01-01

Building on the simulated-amnesia work of Christianson and Bylin (Applied Cognitive Psychology, 13, 495-511, 1999), the present research introduces a new paradigm for the scientific study of memory of childhood sexual abuse information. In Session 1, participants mentally took the part of an abuse victim as they read an account of the sexual assault of a 7-year-old. After reading the narrative, participants were randomly assigned to one of four experimental conditions: They (1) rehearsed the story truthfully (truth group), (2) left out the abuse details of the story (omission group), (3) lied about the abuse details to indicate that no abuse had occurred (commission group), or (4) did not recall the story during Session 1 (no-rehearsal group). One week later, participants returned for Session 2 and were asked to truthfully recall the narrative. The results indicated that, relative to truthful recall, untruthful recall or no rehearsal at Session 1 adversely affected memory performance at Session 2. However, untruthful recall resulted in better memory than did no rehearsal. Moreover, gender, PTSD symptoms, depression, adult attachment, and sexual abuse history significantly predicted memory for the childhood sexual abuse scenario. Implications for theory and application are discussed.

Application of Taguchi method to optimization of surface roughness during precise turning of NiTi shape memory alloy

Science.gov (United States)

Kowalczyk, M.

2017-08-01

This paper describes the research results of surface quality research after the NiTi shape memory alloy (Nitinol) precise turning by the tools with edges made of polycrystalline diamonds (PCD). Nitinol, a nearly equiatomic nickel-titanium shape memory alloy, has wide applications in the arms industry, military, medicine and aerospace industry, and industrial robots. Due to their specific properties NiTi alloys are known to be difficult-to-machine materials particularly by using conventional techniques. The research trials were conducted for three independent parameters (vc, f, ap) affecting the surface roughness were analyzed. The choice of parameter configurations were performed by factorial design methods using orthogonal plan type L9, with three control factors, changing on three levels, developed by G. Taguchi. S/N ratio and ANOVA analyses were performed to identify the best of cutting parameters influencing surface roughness.

Memory and Perfection in Ferroelastic Inclusion Compounds

International Nuclear Information System (INIS)

Hollingsworth, M.; Peterson, M.; Rush, J.; Brown, M.; Abel, M.; Black, A.; Dudley, M.; Raghothamachar, B.; Werner-Zwanziger, U.

2005-01-01

In a series of ferroelastic urea inclusion compounds (UICs), in which domain reorientation occurs upon application of an external anisotropic force, introduction of a relaxive impurity that disrupts a specific hydrogen-bonding network transforms a plastic (irreversible) domain-switching process into one that exhibits a striking memory effect and 'rubber-like behavior', a form of pseudoelasticity. As expected for a highly cooperative process, the ferroelastic response to the impurity concentration exhibits a critical threshold. Through synchrotron white-beam X-ray topography (SWBXT) of crystals under stress, videomicroscopy of spontaneous repair during crystal growth, acoustomechanical relaxation of daughter domains, kinetic measurements of spontaneous domain reversion, and solid-state 2 H NMR of labeled guests, this work shows how relaxive impurities lower the barrier to domain switching and how differences in perfection between mother and daughter domains provide the driving force for the memory effects. Although the interfacial effects implicated here are different from the volume effects that operate in certain shape memory materials, the twinning and defect phenomena responsible for the rubber-like behavior and memory effects should be generally applicable to domain switching in ferroelastic and ferroelectric crystals and to other solid-state processes

Is residual memory variance a valid method for quantifying cognitive reserve? A longitudinal application

Science.gov (United States)

Zahodne, Laura B.; Manly, Jennifer J.; Brickman, Adam M.; Narkhede, Atul; Griffith, Erica Y.; Guzman, Vanessa A.; Schupf, Nicole; Stern, Yaakov

2016-01-01

Cognitive reserve describes the mismatch between brain integrity and cognitive performance. Older adults with high cognitive reserve are more resilient to age-related brain pathology. Traditionally, cognitive reserve is indexed indirectly via static proxy variables (e.g., years of education). More recently, cross-sectional studies have suggested that reserve can be expressed as residual variance in episodic memory performance that remains after accounting for demographic factors and brain pathology (whole brain, hippocampal, and white matter hyperintensity volumes). The present study extends these methods to a longitudinal framework in a community-based cohort of 244 older adults who underwent two comprehensive neuropsychological and structural magnetic resonance imaging sessions over 4.6 years. On average, residual memory variance decreased over time, consistent with the idea that cognitive reserve is depleted over time. Individual differences in change in residual memory variance predicted incident dementia, independent of baseline residual memory variance. Multiple-group latent difference score models revealed tighter coupling between brain and language changes among individuals with decreasing residual memory variance. These results suggest that changes in residual memory variance may capture a dynamic aspect of cognitive reserve and could be a useful way to summarize individual cognitive responses to brain changes. Change in residual memory variance among initially non-demented older adults was a better predictor of incident dementia than residual memory variance measured at one time-point. PMID:26348002

Specificity in autobiographical memory narratives correlates with performance on the Autobiographical Memory Test and prospectively predicts depressive symptoms

Science.gov (United States)

Sumner, Jennifer A.; Mineka, Susan; McAdams, Dan P.

2012-01-01

Reduced autobiographical memory specificity (AMS) is an important cognitive marker in depression that is typically measured with the Autobiographical Memory Test (AMT; Williams & Broadbent, 1986). The AMT is widely used, but the overreliance on a single methodology for assessing AMS is a limitation in the field. The current study investigated memory narratives as an alternative measure of AMS in an undergraduate student sample selected for being high or low on a measure of depressive symptoms (N = 55). We employed a multi-method design to compare narrative- and AMT-based measures of AMS. Participants generated personally significant self-defining memory narratives, and also completed two versions of the AMT (with and without instructions to retrieve specific memories). Greater AMS in self-defining memory narratives correlated with greater AMS in performance on both versions of the AMT in the full sample, and the patterns of relationships between the different AMS measures were generally similar in low and high dysphoric participants. Furthermore, AMS in self-defining memory narratives was prospectively associated with depressive symptom levels. Specifically, greater AMS in self-defining memory narratives predicted fewer depressive symptoms at a 10-week follow-up over and above baseline symptom levels. Implications for future research and clinical applications are discussed. PMID:23240988

Nano-memory-element applications of carbon nanocapsule encapsulating potassium ions: molecular dynamics study

International Nuclear Information System (INIS)

Kang, Jeong Won; Hwang, Ho Jung

2004-01-01

We investigated the internal dynamics of ionic fluidic shuttle memory elements consisting of potassium ions encapsulated in C 640 nanocapsules. The systems proposed were the encapsulated-ion shuttle memory devices such as (13 K + ) at C 640 , (3 K + -C 60 -2 K + ) at C 640 and (5 K + -C 60 ) at C 640 . The energetics and the operating responses of ionic fluidic shuttle memory devices, such as transitions between the two states of the C 640 capsule, were examined by using classical molecular dynamics simulations of the shuttle media in the C 640 capsule under external force fields. The operating force fields for stable operations of the shuttle memory device were investigated.

Shape memory effect and superelasticity of titanium nickelide alloys implanted with high ion doses

International Nuclear Information System (INIS)

Pogrebnjak, A D; Bratushka, S N; Beresnev, V M; Levintant-Zayonts, N

2013-01-01

The state of the art in ion implantation of superelastic NiTi shape memory alloys is analyzed. Various technological applications of the shape memory effect are outlined. The principles and techiques of ion implantation are described. Specific features of its application for modification of surface layers in surface engineering are considered. Key properties of shape memory alloys and problems in utilization of ion implantation to improve the surface properties of shape memory alloys, such as corrosion resistance, friction coefficient, wear resistance, etc. are discussed. The bibliography includes 162 references

Worst-Case Memory Consumption Analysis for SCJ

DEFF Research Database (Denmark)

Andersen, Jeppe Lunde; Todberg, Mikkel; Dalsgaard, Andreas Engelbredt

2013-01-01

Safety-Critical Java is designed to be used for safety-critical and hard real-time systems. To ensure predictable behaviour garbage collection has been replaced by a scope based memory model. This model currently requires bounds on memory usage of scopes to be specified by developers. These bounds...... have to be strict worst-case memory bounds to ensure correct behaviour of these systems. Currently, common methods are measurement based or by careful inspection of the applications Java bytecode. Not only is this a cumbersome approach it is also potentially unsafe. In this paper we present a worst......-case memory consumption tool for Safety-Critical Java and evaluate it on existing usecases and a new usecase building on the Cubesat Space Protocol....

Database architecture optimized for the new bottleneck: Memory access

NARCIS (Netherlands)

P.A. Boncz (Peter); S. Manegold (Stefan); M.L. Kersten (Martin)

1999-01-01

textabstractIn the past decade, advances in speed of commodity CPUs have far out-paced advances in memory latency. Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. In this article, we use a simple scan test to show the

Optimizing Database Architecture for the New Bottleneck: Memory Access

NARCIS (Netherlands)

S. Manegold (Stefan); P.A. Boncz (Peter); M.L. Kersten (Martin)

2000-01-01

textabstractIn the past decade, advances in speed of commodity CPUs have far out-paced advances in memory latency. Main-memory access is therefore increasingly a performance bottleneck for many computer applications, including database systems. In this article, we use a simple scan test to show the

Construction and Application of an AMR Algorithm for Distributed Memory Computers

OpenAIRE

Deiterding, Ralf

2003-01-01

While the parallelization of blockstructured adaptive mesh refinement techniques is relatively straight-forward on shared memory architectures, appropriate distribution strategies for the emerging generation of distributed memory machines are a topic of on-going research. In this paper, a locality-preserving domain decomposition is proposed that partitions the entire AMR hierarchy from the base level on. It is shown that the approach reduces the communication costs and simplifies the im...

Memory operation mechanism of fullerene-containing polymer memory

Energy Technology Data Exchange (ETDEWEB)

Nakajima, Anri, E-mail: anakajima@hiroshima-u.ac.jp; Fujii, Daiki [Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima 739-8527 (Japan)

2015-03-09

The memory operation mechanism in fullerene-containing nanocomposite gate insulators was investigated while varying the kind of fullerene in a polymer gate insulator. It was cleared what kind of traps and which positions in the nanocomposite the injected electrons or holes are stored in. The reason for the difference in the easiness of programming was clarified taking the role of the charging energy of an injected electron into account. The dependence of the carrier dynamics on the kind of fullerene molecule was investigated. A nonuniform distribution of injected carriers occurred after application of a large magnitude programming voltage due to the width distribution of the polystyrene barrier between adjacent fullerene molecules. Through the investigations, we demonstrated a nanocomposite gate with fullerene molecules having excellent retention characteristics and a programming capability. This will lead to the realization of practical organic memories with fullerene-containing polymer nanocomposites.

Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits

Science.gov (United States)

Yang, Deren; Chen, Jiahe; Ma, Xiangyang; Que, Duanlin

2009-01-01

Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.

State of the art on targeted memory reactivation: Sleep your way to enhanced cognition.

Science.gov (United States)

Schouten, Daphne I; Pereira, Sofia I R; Tops, Mattie; Louzada, Fernando M

2017-04-01

Targeted memory reactivation is a fairly simple technique that has the potential to influence the course of memory formation through application of cues during sleep. Studies have shown that cueing memory during sleep can lead to either an enhanced or decreased representation of the information encoded in the targeted networks, depending on experimental variations. The effects have been associated with sleep parameters and accompanied by activation of memory related brain areas. The findings suggest a causal role of neuronal replay in memory consolidation and provide evidence for the active system consolidation hypothesis. However, the observed inconsistencies across studies suggest that further research is warranted regarding the underlying neural mechanisms and optimal conditions for the application of targeted memory reactivation. The goal of the present review is to integrate the currently available experimental data and to provide an overview of this technique's limitations and pitfalls, as well as its potential applications in everyday use and clinical treatment. Exploring the open questions herein identified should lead to insight into safer and more effective ways of adjusting memory representations to better suit individual needs. Copyright © 2016 Elsevier Ltd. All rights reserved.

Two-Layer Feedback Neural Networks with Associative Memories

International Nuclear Information System (INIS)

Gui-Kun, Wu; Hong, Zhao

2008-01-01

We construct a two-layer feedback neural network by a Monte Carlo based algorithm to store memories as fixed-point attractors or as limit-cycle attractors. Special attention is focused on comparing the dynamics of the network with limit-cycle attractors and with fixed-point attractors. It is found that the former has better retrieval property than the latter. Particularly, spurious memories may be suppressed completely when the memories are stored as a long-limit cycle. Potential application of limit-cycle-attractor networks is discussed briefly. (general)

Finite Memory Walk and Its Application to Small-World Network

Science.gov (United States)

Oshima, Hiraku; Odagaki, Takashi

2012-07-01

In order to investigate the effects of cycles on the dynamical process on both regular lattices and complex networks, we introduce a finite memory walk (FMW) as an extension of the simple random walk (SRW), in which a walker is prohibited from moving to sites visited during m steps just before the current position. This walk interpolates the simple random walk (SRW), which has no memory (m = 0), and the self-avoiding walk (SAW), which has an infinite memory (m = ∞). We investigate the FMW on regular lattices and clarify the fundamental characteristics of the walk. We find that (1) the mean-square displacement (MSD) of the FMW shows a crossover from the SAW at a short time step to the SRW at a long time step, and the crossover time is approximately equivalent to the number of steps remembered, and that the MSD can be rescaled in terms of the time step and the size of memory; (2) the mean first-return time (MFRT) of the FMW changes significantly at the number of remembered steps that corresponds to the size of the smallest cycle in the regular lattice, where ``smallest'' indicates that the size of the cycle is the smallest in the network; (3) the relaxation time of the first-return time distribution (FRTD) decreases as the number of cycles increases. We also investigate the FMW on the Watts--Strogatz networks that can generate small-world networks, and show that the clustering coefficient of the Watts--Strogatz network is strongly related to the MFRT of the FMW that can remember two steps.

A light writable microfluidic "flash memory": optically addressed actuator array with latched operation for microfluidic applications.

Science.gov (United States)

Hua, Zhishan; Pal, Rohit; Srivannavit, Onnop; Burns, Mark A; Gulari, Erdogan

2008-03-01

This paper presents a novel optically addressed microactuator array (microfluidic "flash memory") with latched operation. Analogous to the address-data bus mediated memory address protocol in electronics, the microactuator array consists of individual phase-change based actuators addressed by localized heating through focused light patterns (address bus), which can be provided by a modified projector or high power laser pointer. A common pressure manifold (data bus) for the entire array is used to generate large deflections of the phase change actuators in the molten phase. The use of phase change material as the working media enables latched operation of the actuator array. After the initial light "writing" during which the phase is temporarily changed to molten, the actuated status is self-maintained by the solid phase of the actuator without power and pressure inputs. The microfluidic flash memory can be re-configured by a new light illumination pattern and common pressure signal. The proposed approach can achieve actuation of arbitrary units in a large-scale array without the need for complex external equipment such as solenoid valves and electrical modules, which leads to significantly simplified system implementation and compact system size. The proposed work therefore provides a flexible, energy-efficient, and low cost multiplexing solution for microfluidic applications based on physical displacements. As an example, the use of the latched microactuator array as "normally closed" or "normally open" microvalves is demonstrated. The phase-change wax is fully encapsulated and thus immune from contamination issues in fluidic environments.

A compact PE memory for vision chips

Science.gov (United States)

Cong, Shi; Zhe, Chen; Jie, Yang; Nanjian, Wu; Zhihua, Wang

2014-09-01

This paper presents a novel compact memory in the processing element (PE) for single-instruction multiple-data (SIMD) vision chips. The PE memory is constructed with 8 × 8 register cells, where one latch in the slave stage is shared by eight latches in the master stage. The memory supports simultaneous read and write on the same address in one clock cycle. Its compact area of 14.33 μm2/bit promises a higher integration level of the processor. A prototype chip with a 64 × 64 PE array is fabricated in a UMC 0.18 μm CMOS technology. Five types of the PE memory cell structure are designed and compared. The testing results demonstrate that the proposed PE memory architecture well satisfies the requirement of the vision chip in high-speed real-time vision applications, such as 1000 fps edge extraction.

A compact PE memory for vision chips

International Nuclear Information System (INIS)

Shi Cong; Chen Zhe; Yang Jie; Wu Nanjian; Wang Zhihua

2014-01-01

This paper presents a novel compact memory in the processing element (PE) for single-instruction multiple-data (SIMD) vision chips. The PE memory is constructed with 8 × 8 register cells, where one latch in the slave stage is shared by eight latches in the master stage. The memory supports simultaneous read and write on the same address in one clock cycle. Its compact area of 14.33 μm 2 /bit promises a higher integration level of the processor. A prototype chip with a 64 × 64 PE array is fabricated in a UMC 0.18 μm CMOS technology. Five types of the PE memory cell structure are designed and compared. The testing results demonstrate that the proposed PE memory architecture well satisfies the requirement of the vision chip in high-speed real-time vision applications, such as 1000 fps edge extraction. (semiconductor integrated circuits)

Memory blindness: Altered memory reports lead to distortion in eyewitness memory.

Science.gov (United States)

Cochran, Kevin J; Greenspan, Rachel L; Bogart, Daniel F; Loftus, Elizabeth F

2016-07-01

Choice blindness refers to the finding that people can often be misled about their own self-reported choices. However, little research has investigated the more long-term effects of choice blindness. We examined whether people would detect alterations to their own memory reports, and whether such alterations could influence participants' memories. Participants viewed slideshows depicting crimes, and then either reported their memories for episodic details of the event (Exp. 1) or identified a suspect from a lineup (Exp. 2). Then we exposed participants to manipulated versions of their memory reports, and later tested their memories a second time. The results indicated that the majority of participants failed to detect the misinformation, and that exposing witnesses to misleading versions of their own memory reports caused their memories to change to be consistent with those reports. These experiments have implications for eyewitness memory.

Multiple memory systems, multiple time points: how science can inform treatment to control the expression of unwanted emotional memories.

Science.gov (United States)

Visser, Renée M; Lau-Zhu, Alex; Henson, Richard N; Holmes, Emily A

2018-03-19

Memories that have strong emotions associated with them are particularly resilient to forgetting. This is not necessarily problematic, however some aspects of memory can be. In particular, the involuntary expression of those memories, e.g. intrusive memories after trauma, are core to certain psychological disorders. Since the beginning of this century, research using animal models shows that it is possible to change the underlying memory, for example by interfering with its consolidation or reconsolidation. While the idea of targeting maladaptive memories is promising for the treatment of stress and anxiety disorders, a direct application of the procedures used in non-human animals to humans in clinical settings is not straightforward. In translational research, more attention needs to be paid to specifying what aspect of memory (i) can be modified and (ii) should be modified. This requires a clear conceptualization of what aspect of memory is being targeted, and how different memory expressions may map onto clinical symptoms. Furthermore, memory processes are dynamic, so procedural details concerning timing are crucial when implementing a treatment and when assessing its effectiveness. To target emotional memory in its full complexity, including its malleability, science cannot rely on a single method, species or paradigm. Rather, a constructive dialogue is needed between multiple levels of research, all the way 'from mice to mental health'.This article is part of a discussion meeting issue 'Of mice and mental health: facilitating dialogue between basic and clinical neuroscientists'. © 2018 The Authors.

Exploring the use of memory colors for image enhancement

Science.gov (United States)

Xue, Su; Tan, Minghui; McNamara, Ann; Dorsey, Julie; Rushmeier, Holly

2014-02-01

Memory colors refer to those colors recalled in association with familiar objects. While some previous work introduces this concept to assist digital image enhancement, their basis, i.e., on-screen memory colors, are not appropriately investigated. In addition, the resulting adjustment methods developed are not evaluated from a perceptual view of point. In this paper, we first perform a context-free perceptual experiment to establish the overall distributions of screen memory colors for three pervasive objects. Then, we use a context-based experiment to locate the most representative memory colors; at the same time, we investigate the interactions of memory colors between different objects. Finally, we show a simple yet effective application using representative memory colors to enhance digital images. A user study is performed to evaluate the performance of our technique.

Is residual memory variance a valid method for quantifying cognitive reserve? A longitudinal application.

Science.gov (United States)

Zahodne, Laura B; Manly, Jennifer J; Brickman, Adam M; Narkhede, Atul; Griffith, Erica Y; Guzman, Vanessa A; Schupf, Nicole; Stern, Yaakov

2015-10-01

Cognitive reserve describes the mismatch between brain integrity and cognitive performance. Older adults with high cognitive reserve are more resilient to age-related brain pathology. Traditionally, cognitive reserve is indexed indirectly via static proxy variables (e.g., years of education). More recently, cross-sectional studies have suggested that reserve can be expressed as residual variance in episodic memory performance that remains after accounting for demographic factors and brain pathology (whole brain, hippocampal, and white matter hyperintensity volumes). The present study extends these methods to a longitudinal framework in a community-based cohort of 244 older adults who underwent two comprehensive neuropsychological and structural magnetic resonance imaging sessions over 4.6 years. On average, residual memory variance decreased over time, consistent with the idea that cognitive reserve is depleted over time. Individual differences in change in residual memory variance predicted incident dementia, independent of baseline residual memory variance. Multiple-group latent difference score models revealed tighter coupling between brain and language changes among individuals with decreasing residual memory variance. These results suggest that changes in residual memory variance may capture a dynamic aspect of cognitive reserve and could be a useful way to summarize individual cognitive responses to brain changes. Change in residual memory variance among initially non-demented older adults was a better predictor of incident dementia than residual memory variance measured at one time-point. Copyright © 2015. Published by Elsevier Ltd.

Near-Field Thermal Radiation for Solar Thermophotovoltaics and High Temperature Thermal Logic and Memory Applications

Science.gov (United States)

Elzouka, Mahmoud

This dissertation investigates Near-Field Thermal Radiation (NFTR) applied to MEMS-based concentrated solar thermophotovoltaics (STPV) energy conversion and thermal memory and logics. NFTR is the exchange of thermal radiation energy at nano/microscale; when separation between the hot and cold objects is less than dominant radiation wavelength (˜1 mum). NFTR is particularly of interest to the above applications due to its high rate of energy transfer, exceeding the blackbody limit by orders of magnitude, and its strong dependence on separation gap size, surface nano/microstructure and material properties. Concentrated STPV system converts solar radiation to electricity using heat as an intermediary through a thermally coupled absorber/emitter, which causes STPV to have one of the highest solar-to-electricity conversion efficiency limits (85.4%). Modeling of a near-field concentrated STPV microsystem is carried out to investigate the use of STPV based solid-state energy conversion as high power density MEMS power generator. Numerical results for In 0.18Ga0.82Sb PV cell illuminated with tungsten emitter showed significant enhancement in energy transfer, resulting in output power densities as high as 60 W/cm2; 30 times higher than the equivalent far-field power density. On thermal computing, this dissertation demonstrates near-field heat transfer enabled high temperature NanoThermoMechanical memory and logics. Unlike electronics, NanoThermoMechanical memory and logic devices use heat instead of electricity to record and process data; hence they can operate in harsh environments where electronics typically fail. NanoThermoMechanical devices achieve memory and thermal rectification functions through the coupling of near-field thermal radiation and thermal expansion in microstructures, resulting in nonlinear heat transfer between two temperature terminals. Numerical modeling of a conceptual NanoThermoMechanical is carried out; results include the dynamic response under

Multiprocessor shared-memory information exchange

International Nuclear Information System (INIS)

Santoline, L.L.; Bowers, M.D.; Crew, A.W.; Roslund, C.J.; Ghrist, W.D. III

1989-01-01

In distributed microprocessor-based instrumentation and control systems, the inter-and intra-subsystem communication requirements ultimately form the basis for the overall system architecture. This paper describes a software protocol which addresses the intra-subsystem communications problem. Specifically the protocol allows for multiple processors to exchange information via a shared-memory interface. The authors primary goal is to provide a reliable means for information to be exchanged between central application processor boards (masters) and dedicated function processor boards (slaves) in a single computer chassis. The resultant Multiprocessor Shared-Memory Information Exchange (MSMIE) protocol, a standard master-slave shared-memory interface suitable for use in nuclear safety systems, is designed to pass unidirectional buffers of information between the processors while providing a minimum, deterministic cycle time for this data exchange

Charge trapping characteristics of Au nanocrystals embedded in remote plasma atomic layer-deposited Al2O3 film as the tunnel and blocking oxides for nonvolatile memory applications

International Nuclear Information System (INIS)

Lee, Jaesang; Kim, Hyungchul; Park, Taeyong; Ko, Youngbin; Ryu, Jaehun; Jeon, Heeyoung; Park, Jingyu; Jeon, Hyeongtag

2012-01-01

Remote plasma atomic layer deposited (RPALD) Al 2 O 3 films were investigated to apply as tunnel and blocking layers in the metal-oxide-semiconductor capacitor memory utilizing Au nanocrystals (NCs) for nonvolatile memory applications. The interface stability of an Al 2 O 3 film deposited by RPALD was studied to observe the effects of remote plasma on the interface. The interface formed during RPALD process has high oxidation states such as Si +3 and Si +4 , indicating that RPALD process can grow more stable interface which has a small amount of fixed oxide trap charge. The significant memory characteristics were also observed in this memory device through the electrical measurement. The memory device exhibited a relatively large memory window of 5.6 V under a 10/-10 V program/erase voltage and also showed the relatively fast programming/erasing speed and a competitive retention characteristic after 10 4 s. These results indicate that Al 2 O 3 films deposited via RPALD can be applied as the tunnel and blocking oxides for next-generation flash memory devices.

Axially modulated arch resonator for logic and memory applications

KAUST Repository

Hafiz, Md Abdullah Al; Tella, Sherif Adekunle; Alcheikh, Nouha; Fariborzi, Hossein; Younis, Mohammad I.

2018-01-01

We demonstrate reconfigurable logic and random access memory devices based on an axially modulated clamped-guided arch resonator. The device is electrostatically actuated and the motional signal is capacitively sensed, while the resonance frequency

The practical engineer-fine-tuning memory macros using variable internal delays

CERN Document Server

Gray, K

1999-01-01

Embedded memory blocks are extremely common in application-specific IC (ASIC) chips. In this era of design reuse, it is critical that these memory macros, as they are also called, should be as versatile as possible. Their $9 performance should be optimal, with adequate sense amplifier signal over the full manufacturing process range of the chip. Fortunately, several simple techniques exist for adapting memory macros to different applications running at $9 different speeds. The key is to design in delays that are variable and/or programmable. The approach is also helpful in debugging initial hardware where a memory macro is refusing to function because its timing is too fast and there $9 is insufficient internal delay for proper circuit operation. The techniques can also eliminate the process of redesigning and refabricating the initial hardware just to characterize it. A memory macro is made to function by internal $9 pulses, generated in the correct number, sequence and relationship by the internal timing ch...

PIMS: Memristor-Based Processing-in-Memory-and-Storage.

Energy Technology Data Exchange (ETDEWEB)

Cook, Jeanine

2018-02-01

Continued progress in computing has augmented the quest for higher performance with a new quest for higher energy efficiency. This has led to the re-emergence of Processing-In-Memory (PIM) ar- chitectures that offer higher density and performance with some boost in energy efficiency. Past PIM work either integrated a standard CPU with a conventional DRAM to improve the CPU- memory link, or used a bit-level processor with Single Instruction Multiple Data (SIMD) control, but neither matched the energy consumption of the memory to the computation. We originally proposed to develop a new architecture derived from PIM that more effectively addressed energy efficiency for high performance scientific, data analytics, and neuromorphic applications. We also originally planned to implement a von Neumann architecture with arithmetic/logic units (ALUs) that matched the power consumption of an advanced storage array to maximize energy efficiency. Implementing this architecture in storage was our original idea, since by augmenting storage (in- stead of memory), the system could address both in-memory computation and applications that accessed larger data sets directly from storage, hence Processing-in-Memory-and-Storage (PIMS). However, as our research matured, we discovered several things that changed our original direc- tion, the most important being that a PIM that implements a standard von Neumann-type archi- tecture results in significant energy efficiency improvement, but only about a O(10) performance improvement. In addition to this, the emergence of new memory technologies moved us to propos- ing a non-von Neumann architecture, called Superstrider, implemented not in storage, but in a new DRAM technology called High Bandwidth Memory (HBM). HBM is a stacked DRAM tech- nology that includes a logic layer where an architecture such as Superstrider could potentially be implemented.

Are subjective memory problems related to suggestibility, compliance, false memories, and objective memory performance?

Science.gov (United States)

Van Bergen, Saskia; Jelicic, Marko; Merckelbach, Harald

2009-01-01

The relationship between subjective memory beliefs and suggestibility, compliance, false memories, and objective memory performance was studied in a community sample of young and middle-aged people (N = 142). We hypothesized that people with subjective memory problems would exhibit higher suggestibility and compliance levels and would be more susceptible to false recollections than those who are optimistic about their memory. In addition, we expected a discrepancy between subjective memory judgments and objective memory performance. We found that subjective memory judgments correlated significantly with compliance, with more negative memory judgments accompanying higher levels of compliance. Contrary to our expectation, subjective memory problems did not correlate with suggestibility or false recollections. Furthermore, participants were accurate in estimating their objective memory performance.

Estimating and Forecasting Generalized Fractional Long Memory Stochastic Volatility Models

NARCIS (Netherlands)

S. Peiris (Shelton); M. Asai (Manabu); M.J. McAleer (Michael)

2016-01-01

textabstractIn recent years fractionally differenced processes have received a great deal of attention due to its flexibility in financial applications with long memory. This paper considers a class of models generated by Gegenbauer polynomials, incorporating the long memory in stochastic volatility

Rambrain - a library for virtually extending physical memory

Directory of Open Access Journals (Sweden)

M. Imgrund

2017-01-01

Full Text Available We introduce Rambrain, a user space C++ library that manages memory consumption of data-intense applications. Using Rambrain, one can overcommit memory beyond the size of physical memory present in the system. While there exist other more advanced techniques to solve this problem, Rambrain focuses on saving development time by providing a fast, general and easy-to-use solution. Rambrain takes care of temporarily swapping out data to disk and can handle multiples of the physical memory size present. Rambrain is thread-safe, OpenMP and MPI compatible and supports asynchronous I/O. The library is designed to require minimal changes to existing programs and pose only a small overhead.

Texture memory and strain-texture mapping in a NiTi shape memory alloy

International Nuclear Information System (INIS)

Ye, B.; Majumdar, B. S.; Dutta, I.

2007-01-01

The authors report on the near-reversible strain hysteresis during thermal cycling of a polycrystalline NiTi shape memory alloy at a constant stress that is below the yield strength of the martensite. In situ neutron diffraction experiments are used to demonstrate that the strain hysteresis occurs due to a texture memory effect, where the martensite develops a texture when it is cooled under load from the austenite phase and is thereafter ''remembered.'' Further, the authors quantitatively relate the texture to the strain by developing a calculated strain-texture map or pole figure for the martensite phase, and indicate its applicability in other martensitic transformations

Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing (invited)

International Nuclear Information System (INIS)

Ando, K.; Yuasa, S.; Fujita, S.; Ito, J.; Yoda, H.; Suzuki, Y.; Nakatani, Y.; Miyazaki, T.

2014-01-01

Most parts of present computer systems are made of volatile devices, and the power to supply them to avoid information loss causes huge energy losses. We can eliminate this meaningless energy loss by utilizing the non-volatile function of advanced spin-transfer torque magnetoresistive random-access memory (STT-MRAM) technology and create a new type of computer, i.e., normally off computers. Critical tasks to achieve normally off computers are implementations of STT-MRAM technologies in the main memory and low-level cache memories. STT-MRAM technology for applications to the main memory has been successfully developed by using perpendicular STT-MRAMs, and faster STT-MRAM technologies for applications to the cache memory are now being developed. The present status of STT-MRAMs and challenges that remain for normally off computers are discussed

Memristive learning and memory functions in polyvinyl alcohol polymer memristors

Directory of Open Access Journals (Sweden)

Yan Lei

2014-07-01

Full Text Available Polymer based memristive devices can offer simplicity in fabrication and at the same time promise functionalities for artificial neural applications. In this work, inherent learning and memory functions have been achieved in polymer memristive devices employing Polyvinyl Alcohol. The change in conduction in such polymer devices strongly depends on the pulse amplitude, duration and time interval. Through repetitive stimuli training, temporary short-term memory can transfer into consolidated long-term memory. These behaviors bear remarkable similarities to certain learning and memory functions of biological systems.

Chalcogenide phase-change memory nanotubes for lower writing current operation

International Nuclear Information System (INIS)

Jung, Yeonwoong; Agarwal, Rahul; Yang, Chung-Ying; Agarwal, Ritesh

2011-01-01

We report the synthesis and characterization of Sb-doped Te-rich nanotubes, and study their memory switching properties under the application of electrical pulses. Te-rich nanotubes display significantly low writing currents due to their small cross-sectional areas, which is desirable for power-efficient memory operation. The nanotube devices show limited resistance ratio and cyclic switching capability owing to the intrinsic properties of Te. The observed memory switching properties of this new class of nanostructured memory elements are discussed in terms of fundamental materials properties and extrinsic geometrical effects.

Shape Memory Alloys for Monitoring Minor Over-Heating/Cooling Based on the Temperature Memory Effect via Differential Scanning Calorimetry: A Review of Recent Progress

Science.gov (United States)

Wang, T. X.; Huang, W. M.

2017-12-01

The recent development in the temperature memory effect (TME) via differential scanning calorimetry in shape memory alloys is briefly discussed. This phenomenon was also called the thermal arrest memory effect in the literature. However, these names do not explicitly reveal the potential application of this phenomenon in temperature monitoring. On the other hand, the standard testing process of the TME has great limitation. Hence, it cannot be directly applied for temperature monitoring in most of the real engineering applications in which temperature fluctuation occurs mostly in a random manner within a certain range. However, as shown here, after proper modification, we are able to monitor the maximum or minimum temperature in either over-heating or over-cooling with reasonable accuracy.

AC Electric Field Activated Shape Memory Polymer Composite

Science.gov (United States)

Kang, Jin Ho; Siochi, Emilie J.; Penner, Ronald K.; Turner, Travis L.

2011-01-01

Shape memory materials have drawn interest for applications like intelligent medical devices, deployable space structures and morphing structures. Compared to other shape memory materials like shape memory alloys (SMAs) or shape memory ceramics (SMCs), shape memory polymers (SMPs) have high elastic deformation that is amenable to tailored of mechanical properties, have lower density, and are easily processed. However, SMPs have low recovery stress and long response times. A new shape memory thermosetting polymer nanocomposite (LaRC-SMPC) was synthesized with conductive fillers to enhance its thermo-mechanical characteristics. A new composition of shape memory thermosetting polymer nanocomposite (LaRC-SMPC) was synthesized with conductive functionalized graphene sheets (FGS) to enhance its thermo-mechanical characteristics. The elastic modulus of LaRC-SMPC is approximately 2.7 GPa at room temperature and 4.3 MPa above its glass transition temperature. Conductive FGSs-doped LaRC-SMPC exhibited higher conductivity compared to pristine LaRC SMP. Applying an electric field at between 0.1 Hz and 1 kHz induced faster heating to activate the LaRC-SMPC s shape memory effect relative to applying DC electric field or AC electric field at frequencies exceeding1 kHz.

Aristotle: A performance Impact Indicator for the OpenCL Kernels Using Local Memory

Directory of Open Access Journals (Sweden)

Jianbin Fang

2014-01-01

Full Text Available Due to the increasing complexity of multi/many-core architectures (with their mix of caches and scratch-pad memories and applications (with different memory access patterns, the performance of many workloads becomes increasingly variable. In this work, we address one of the main causes for this performance variability: the efficiency of the memory system. Specifically, based on an empirical evaluation driven by memory access patterns, we qualify and partially quantify the performance impact of using local memory in multi/many-core processors. To do so, we systematically describe memory access patterns (MAPs in an application-agnostic manner. Next, for each identified MAP, we use OpenCL (for portability reasons to generate two microbenchmarks: a “naive” version (without local memory and “an optimized” version (using local memory. We then evaluate both of them on typically used multi-core and many-core platforms, and we log their performance. What we eventually obtain is a local memory performance database, indexed by various MAPs and platforms. Further, we propose a set of composing rules for multiple MAPs. Thus, we can get an indicator of whether using local memory is beneficial in the presence of multiple memory access patterns. This indication can be used to either avoid the hassle of implementing optimizations with too little gain or, alternatively, give a rough prediction of the performance gain.

Elucidation and Optimization of Resistive Random Access Memory Switching Behavior for Advanced Computing Applications

Science.gov (United States)

Alamgir, Zahiruddin

RRAM has recently emerged as a strong candidate for non-volatile memory (NVM). Beyond memory applications, RRAM holds promise for use in performing logic functions, mimicking neuromorphic activities, enabling multi-level switching, and as one of the key elements of hardware based encryption or signal processing systems. It has been shown previously that RRAM resistance levels can be changed by adjusting compliance current or voltage level. This characteristic makes RRAM suitable for use in setting the synaptic weight in neuromorphic computing circuits. RRAM is also considered as a key element in hardware encryption systems, to produce unique and reproducible signals. However, a key challenge to implement RRAM in these applications is significant cycle to cycle performance variability. We sought to develop RRAM that can be tuned to different resistance levels gradually, with high reliability, and low variability. To achieve this goal, we focused on elucidating the conduction mechanisms underlying the resistive switching behavior for these devices. Electrical conduction mechanisms were determined by curve fitting I-V data using different current conduction equations. Temperature studies were also performed to corroborate these data. It was found that Schottky barrier height and width modulation was one of the key parameters that could be tuned to achieve different resistance levels, and for switching resistance states, primarily via oxygen vacancy movement. Oxygen exchange layers with different electronegativity were placed between top electrode and the oxide layer of TaOx devices to determine the effect of oxygen vacancy concentrations and gradients in these devices. It was found that devices with OELs with lower electronegativity tend to yield greater separation in the OFF vs. ON state resistance levels. As an extension of this work, TaOx based RRAM with Hf as the OEL was fabricated and could be tuned to different resistance level using pulse width and height

Laser welding of Ti-Ni type shape memory alloy

International Nuclear Information System (INIS)

Hirose, Akio; Araki, Takao; Uchihara, Masato; Honda, Keizoh; Kondoh, Mitsuaki.

1990-01-01

The present study was undertaken to apply the laser welding to the joining of a shape memory alloy. Butt welding of a Ti-Ni type shape memory alloy was performed using 10 kW CO 2 laser. The laser welded specimens showed successfully the shape memory effect and super elasticity. These properties were approximately identical with those of the base metal. The change in super elasticity of the welded specimen during tension cycling was investigated. Significant changes in stress-strain curves and residual strain were not observed in the laser welded specimen after the 50-time cyclic test. The weld metal exhibited the celler dendrite. It was revealed by electron diffraction analysis that the phase of the weld metal was the TiNi phase of B2 structure which is the same as the parent phase of base metal and oxide inclusions crystallized at the dendrite boundary. However, oxygen contamination in the weld metal by laser welding did not occur because there was almost no difference in oxygen content between the base metal and the weld metal. The transformation temperatures of the weld metal were almost the same as those of the base metal. From these results, laser welding is applicable to the joining of the Ti-Ni type shape memory alloy. As the application of laser welding to new shape memory devices, the multiplex shape memory device of welded Ti-50.5 at % Ni and Ti-51.0 at % Ni was produced. The device showed two-stage shape memory effects due to the difference in transformation temperature between the two shape memory alloys. (author)

Controllable SET process in O-Ti-Sb-Te based phase change memory for synaptic application

Science.gov (United States)

Ren, Kun; Li, Ruiheng; Chen, Xin; Wang, Yong; Shen, Jiabin; Xia, Mengjiao; Lv, Shilong; Ji, Zhenguo; Song, Zhitang

2018-02-01

The nonlinear resistance change and small bit resolution of phase change memory (PCM) under identical operation pulses will limit its performance as a synaptic device. The octahedral Ti-Te units in Ti-Sb-Te, regarded as nucleation seeds, are degenerated when Ti is bonded with O, causing a slower crystallization and a controllable SET process in PCM cells. A linear resistance change under identical pulses, a resolution of ˜8 bits, and an ON/OFF ratio of ˜102 has been achieved in O-Ti-Sb-Te based PCM, showing its potential application as a synaptic device to improve recognition performance of the neural network.

Not explicit but implicit memory is influenced by individual perception style.

Science.gov (United States)

Hine, Kyoko; Tsushima, Yoshiaki

2018-01-01

Not only explicit but also implicit memory has considerable influence on our daily life. However, it is still unclear whether explicit and implicit memories are sensitive to individual differences. Here, we investigated how individual perception style (global or local) correlates with implicit and explicit memory. As a result, we found that not explicit but implicit memory was affected by the perception style: local perception style people more greatly used implicit memory than global perception style people. These results help us to make the new effective application adapting to individual perception style and understand some clinical symptoms such as autistic spectrum disorder. Furthermore, this finding might give us new insight of memory involving consciousness and unconsciousness as well as relationship between implicit/explicit memory and individual perception style.

Evaluation of External Memory Access Performance on a High-End FPGA Hybrid Computer

Directory of Open Access Journals (Sweden)

Konstantinos Kalaitzis

2016-10-01

Full Text Available The motivation of this research was to evaluate the main memory performance of a hybrid super computer such as the Convey HC-x, and ascertain how the controller performs in several access scenarios, vis-à-vis hand-coded memory prefetches. Such memory patterns are very useful in stencil computations. The theoretical bandwidth of the memory of the Convey is compared with the results of our measurements. The accurate study of the memory subsystem is particularly useful for users when they are developing their application-specific personality. Experiments were performed to measure the bandwidth between the coprocessor and the memory subsystem. The experiments aimed mainly at measuring the reading access speed of the memory from Application Engines (FPGAs. Different ways of accessing data were used in order to find the most efficient way to access memory. This way was proposed for future work in the Convey HC-x. When performing a series of accesses to memory, non-uniform latencies occur. The Memory Controller of the Convey HC-x in the coprocessor attempts to cover this latency. We measure memory efficiency as a ratio of the number of memory accesses and the number of execution cycles. The result of this measurement converges to one in most cases. In addition, we performed experiments with hand-coded memory accesses. The analysis of the experimental results shows how the memory subsystem and Memory Controllers work. From this work we conclude that the memory controllers do an excellent job, largely because (transparently to the user they seem to cache large amounts of data, and hence hand-coding is not needed in most situations.

CMOS technology: a critical enabler for free-form electronics-based killer applications

Science.gov (United States)

Hussain, Muhammad M.; Hussain, Aftab M.; Hanna, Amir

2016-05-01

Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today their focus has been on rigid and bulky thin film based materials. Their applications have been limited to computation, communication, display and vehicular electronics. With the upcoming surge of Internet of Everything, we have critical opportunity to expand the world of electronics by bridging between CMOS technology and free form electronics which can be used as wearable, implantable and embedded form. The asymmetry of shape and softness of surface (skins) in natural living objects including human, other species, plants make them incompatible with the presently available uniformly shaped and rigidly structured today's CMOS electronics. But if we can break this barrier then we can use the physically free form electronics for applications like plant monitoring for expansion of agricultural productivity and quality, we can find monitoring and treatment focused consumer healthcare electronics - and many more creative applications. In our view, the fundamental challenge is to engage the mass users to materialize their creative ideas. Present form of electronics are too complex to understand, to work with and to use. By deploying game changing additive manufacturing, low-cost raw materials, transfer printing along with CMOS technology, we can potentially stick high quality CMOS electronics on any existing objects and embed such electronics into any future objects that will be made. The end goal is to make them smart to augment the quality of our life. We use a particular example on implantable electronics (brain machine interface) and its integration strategy enabled by CMOS device design and technology run path.

Memory-Optimized Software Synthesis from Dataflow Program Graphs with Large Size Data Samples

Directory of Open Access Journals (Sweden)

Hyunok Oh

2003-05-01

Full Text Available In multimedia and graphics applications, data samples of nonprimitive type require significant amount of buffer memory. This paper addresses the problem of minimizing the buffer memory requirement for such applications in embedded software synthesis from graphical dataflow programs based on the synchronous dataflow (SDF model with the given execution order of nodes. We propose a memory minimization technique that separates global memory buffers from local pointer buffers: the global buffers store live data samples and the local buffers store the pointers to the global buffer entries. The proposed algorithm reduces 67% memory for a JPEG encoder, 40% for an H.263 encoder compared with unshared versions, and 22% compared with the previous sharing algorithm for the H.263 encoder. Through extensive buffer sharing optimization, we believe that automatic software synthesis from dataflow program graphs achieves the comparable code quality with the manually optimized code in terms of memory requirement.

Increment memory module for spectrometric data recording

International Nuclear Information System (INIS)

Zhuchkov, A.A.; Myagkikh, A.I.

1988-01-01

Incremental memory unit designed to input differential energy spectra of nuclear radiation is described. ROM application as incremental device has allowed to reduce the number of elements and do simplify information readout from the unit. 12-bit 2048 channels present memory unit organization. The device is connected directly with the bus of microprocessor systems similar to KR 580. Incrementation maximal time constitutes 3 mks. It is possible to use this unit in multichannel counting mode

In-Memory Business Intelligence: Concepts and Performance

Science.gov (United States)

Rantung, V. P.; Kembuan, O.; Rompas, P. T. D.; Mewengkang, A.; Liando, O. E. S.; Sumayku, J.

2018-02-01

This research aims to discuss in-memory Business Intelligent (BI) and to model the business analysis questions to know the performance of the in-memory BI. By using, the Qlickview application found BI dashboards that easily accessed and modified. The dashboards are developed together using an agile development approach such as pre-study, planning, iterative execution, implementation, and evaluation. At the end, this research helping analyzer in choosing a right implementation for BI solution.

Exploiting Data Similarity to Reduce Memory Footprints

Science.gov (United States)

2011-01-01

ure 1 illustrates. We expect the budget for an exascale system to be approximately $200M and memory costs will account for about half of that budget [21...Figure 2 shows that monetary considerations will lead to significantly less main memory relative to compute capability in exascale systems even if...J. Davenport, T. Schlagel, F. John- son, and P. Messina. A Decadal DOE Plan for Providing Exascale Applications and Technologies for DOE Mission

Can Web 2.0 shape meta-memory?

OpenAIRE

Sá, Alberto

2009-01-01

The social features of recent Web 2.0 technologies applications can bear a strong relationship to memory production and can help to shape personal identity through emotional connections by synchronizing people’s subjective experiences. When added to life, the proliferation of mechanical memory, experienced and produced by technology, makes for a new type of shared awareness. Therefore, we should look at these tools as instruments of reminiscence and as creative mnemonic aids. The input of ...

Effects of thickness and geometric variations in the oxide gate stack on the nonvolatile memory behaviors of charge-trap memory thin-film transistors

Science.gov (United States)

Bak, Jun Yong; Kim, So-Jung; Byun, Chun-Won; Pi, Jae-Eun; Ryu, Min-Ki; Hwang, Chi Sun; Yoon, Sung-Min

2015-09-01

Device designs of charge-trap oxide memory thin-film transistors (CTM-TFTs) were investigated to enhance their nonvolatile memory performances. The first strategy was to optimize the film thicknesses of the tunneling and charge-trap (CT) layers in order to meet requirements of both higher operation speed and longer retention time. While the program speed and memory window were improved for the device with a thinner tunneling layer, a long retention time was obtained only for the device with a tunneling layer thicker than 5 nm. The carrier concentration and charge-trap densities were optimized in the 30-nm-thick CT layer. It was observed that 10-nm-thick tunneling, 30-nm-thick CT, and 50-nm-thick blocking layers were the best configuration for our proposed CTM-TFTs, where a memory on/off margin higher than 107 was obtained, and a memory margin of 6.6 × 103 was retained even after the lapse of 105 s. The second strategy was to examine the effects of the geometrical relations between the CT and active layers for the applications of memory elements embedded in circuitries. The CTM-TFTs fabricated without an overlap between the CT layer and the drain electrode showed an enhanced program speed by the reduced parasitic capacitance. The drain-bias disturbance for the memory off-state was effectively suppressed even when a higher read-out drain voltage was applied. Appropriate device design parameters, such as the film thicknesses of each component layer and the geometrical relations between them, can improve the memory performances and expand the application fields of the proposed CTM-TFTs.

An electroconvulsive therapy procedure impairs reconsolidation of episodic memories in humans

NARCIS (Netherlands)

Kroes, Marijn C. W.; Tendolkar, Indira; van Wingen, Guido A.; van Waarde, Jeroen A.; Strange, Bryan A.; Fernández, Guillén

2014-01-01

Despite accumulating evidence for a reconsolidation process in animals, support in humans, especially for episodic memory, is limited. Using a within-subjects manipulation, we found that a single application of electroconvulsive therapy following memory reactivation in patients with unipolar

VHDL-based programming environment for Floating-Gate analog memory cell

Directory of Open Access Journals (Sweden)

Carlos Alberto dos Reis Filho

2005-02-01

Full Text Available An implementation in CMOS technology of a Floating-Gate Analog Memory Cell and Programming Environment is presented. A digital closed-loop control compares a reference value set by user and the memory output and after cycling, the memory output is updated and the new value stored. The circuit can be used as analog trimming for VLSI applications where mechanical trimming associated with postprocessing chip is prohibitive due to high costs.

A comparison of three types of autobiographical memories in old-old age: first memories, pivotal memories and traumatic memories.

Science.gov (United States)

Cohen-Mansfield, Jiska; Shmotkin, Dov; Eyal, Nitza; Reichental, Yael; Hazan, Haim

2010-01-01

Autobiographical memory enables us to construct a personal narrative through which we identify ourselves. Especially important are memories of formative events. This study describes autobiographical memories of people who have reached old-old age (85 years and above), studying 3 types of memories of particular impact on identity and adaptation: first memories, pivotal memories and traumatic memories. In this paper, we examine the content, characteristic themes and environments, and structural characteristics of each of the 3 types of memory. The participants were 26 persons from a larger longitudinal study with an average age of 91 years; half were men and the other half women. The study integrated qualitative and quantitative tools. An open-ended questionnaire included questions about the participants' life story as well as questions about the 3 types of memories. The responses were rated by 3 independent judges on dimensions of central themes and structural characteristics. First memories had a more positive emotional tone, more references to characters from the participant's social circle, a stronger sense of group belonging, and a more narrative style than the other types of memories. Pivotal and traumatic memories were described as more personal than first memories. The 3 types of memories reflect different stages in life development, which together form a sense of identity. They present experiences from the past on select themes, which may assist in the complex task of coping with the difficulties and limitations that advanced old age presents. Future research should examine the functional role of those memories and whether they enable the old-old to support selfhood in the challenging period of last changes and losses. Copyright © 2010 S. Karger AG, Basel.

Vulnerable GPU Memory Management: Towards Recovering Raw Data from GPU

Directory of Open Access Journals (Sweden)

Zhou Zhe

2017-04-01

Full Text Available According to previous reports, information could be leaked from GPU memory; however, the security implications of such a threat were mostly over-looked, because only limited information could be indirectly extracted through side-channel attacks. In this paper, we propose a novel algorithm for recovering raw data directly from the GPU memory residues of many popular applications such as Google Chrome and Adobe PDF reader. Our algorithm enables harvesting highly sensitive information including credit card numbers and email contents from GPU memory residues. Evaluation results also indicate that nearly all GPU-accelerated applications are vulnerable to such attacks, and adversaries can launch attacks without requiring any special privileges both on traditional multi-user operating systems, and emerging cloud computing scenarios.

Short-memory linear processes and econometric applications

CERN Document Server

Mynbaev, Kairat T

2011-01-01

This book serves as a comprehensive source of asymptotic results for econometric models with deterministic exogenous regressors. Such regressors include linear (more generally, piece-wise polynomial) trends, seasonally oscillating functions, and slowly varying functions including logarithmic trends, as well as some specifications of spatial matrices in the theory of spatial models. The book begins with central limit theorems (CLTs) for weighted sums of short memory linear processes. This part contains the analysis of certain operators in Lp spaces and their employment in the derivation of CLTs

Memory architecture for efficient utilization of SDRAM: a case study of the computation/memory access trade-off

DEFF Research Database (Denmark)

Gleerup, Thomas Møller; Holten-Lund, Hans Erik; Madsen, Jan

2000-01-01

. In software, forward differencing is usually better, but in this hardware implementation, the trade-off has made it possible to develop a very regular memory architecture with a buffering system, which can reach 95% bandwidth utilization using off-the-shelf SDRAM, This is achieved by changing the algorithm......This paper discusses the trade-off between calculations and memory accesses in a 3D graphics tile renderer for visualization of data from medical scanners. The performance requirement of this application is a frame rate of 25 frames per second when rendering 3D models with 2 million triangles, i...... to use a memory access strategy with write-only and read-only phases, and a buffering system, which uses round-robin bank write-access combined with burst read-access....

The electromagnetic Christodoulou memory effect and its application to neutron star binary mergers

International Nuclear Information System (INIS)

Bieri, Lydia; Chen, PoNing; Yau, Shing-Tung

2012-01-01

Gravitational waves are predicted by the general theory of relativity. It has been shown that gravitational waves have a nonlinear memory, displacing test masses permanently. This is called the Christodoulou memory. We proved that the electromagnetic field contributes at highest order to the nonlinear memory effect of gravitational waves, enlarging the permanent displacement of test masses. In experiments like LISA or LIGO which measure distances of test masses, the Christodoulou memory will manifest itself as a permanent displacement of these objects. It has been suggested to detect the Christodoulou memory effect using radio telescopes investigating small changes in pulsar’s pulse arrival times. The latter experiments are based on present-day technology and measure changes in frequency. In the present paper, we study the electromagnetic Christodoulou memory effect and compute it for binary neutron star mergers. These are typical sources of gravitational radiation. During these processes, not only mass and momenta are radiated away in form of gravitational waves, but also very strong magnetic fields are produced and radiated away. Moreover, a large portion of the energy is carried away by neutrinos. We give constraints on the conditions, where the energy transported by electromagnetic radiation is of similar or slightly higher order than the energy radiated in gravitational waves or in form of neutrinos. We find that for coalescing neutron stars, large magnetic fields magnify the Christodoulou memory as long as the gaseous environment is sufficiently rarefied. Thus the observed effect on test masses of a laser interferometer gravitational wave detector will be enlarged by the contribution of the electromagnetic field. Therefore, the present results are important for the planned experiments. Looking at the null asymptotics of spacetimes, which are solutions of the Einstein–Maxwell equations, we derive the electromagnetic Christodoulou memory effect. We obtain

Shape memory polymer nanocomposites for application of multiple-field active disassembly: experiment and simulation.

Science.gov (United States)

Carrell, John; Zhang, Hong-Chao; Wang, Shiren; Tate, Derrick

2013-11-19

Active disassembly (AD) uses innovative materials that can perform a designed disassembly action by the application of an external field. AD provides improvements over current disassembly processes by limiting machine or manual labor and enabling batch processing for end-of-life products. With improved disassembly operations, more reuse of components and purer recycling streams may be seen. One problem with AD, however, has been with the single-field actuation because of the probability of accidental disassembly. This presentation will discuss the application of shape memory polymer (SMP) nanocomposites in a new AD process. This novel AD process requires multiple-field actuation of the SMP nanocomposite fastener. In the analysis of this AD process, thermal and magnetic field tests were performed on the SMP nanocomposite. From these tests, finite-element analysis was performed to model and simulate the multiple-field AD process. The results of the simulations provide performance variables for the AD process and show a better performance time for the SMP nanocomposite fastener than for a comparable SMP fastener.

Bifurcations and Crises in a Shape Memory Oscillator

Directory of Open Access Journals (Sweden)

Luciano G. Machado

2004-01-01

Full Text Available The remarkable properties of shape memory alloys have been motivating the interest in applications in different areas varying from biomedical to aerospace hardware. The dynamical response of systems composed by shape memory actuators presents nonlinear characteristics and a very rich behavior, showing periodic, quasi-periodic and chaotic responses. This contribution analyses some aspects related to bifurcation phenomenon in a shape memory oscillator where the restitution force is described by a polynomial constitutive model. The term bifurcation is used to describe qualitative changes that occur in the orbit structure of a system, as a consequence of parameter changes, being related to chaos. Numerical simulations show that the response of the shape memory oscillator presents period doubling cascades, direct and reverse, and crises.

Frequency-specific insight into short-term memory capacity

OpenAIRE

Feurra, Matteo; Galli, Giulia; Pavone, Enea Francesco; Rossi, Alessandro; Rossi, Simone

2016-01-01

We provided novel evidence of a frequency-specific effect by transcranial alternating current stimulation (tACS) of the left posterior parietal cortex on short-term memory, during a digit span task. the effect was prominent with stimulation at beta frequency for young and not for middle-aged adults and correlated with age. Our findings highlighted a short-term memory capacity improvement by tACS application.

Enhanced Device and Circuit-Level Performance Benchmarking of Graphene Nanoribbon Field-Effect Transistor against a Nano-MOSFET with Interconnects

Directory of Open Access Journals (Sweden)

Huei Chaeng Chin

2014-01-01

Full Text Available Comparative benchmarking of a graphene nanoribbon field-effect transistor (GNRFET and a nanoscale metal-oxide-semiconductor field-effect transistor (nano-MOSFET for applications in ultralarge-scale integration (ULSI is reported. GNRFET is found to be distinctly superior in the circuit-level architecture. The remarkable transport properties of GNR propel it into an alternative technology to circumvent the limitations imposed by the silicon-based electronics. Budding GNRFET, using the circuit-level modeling software SPICE, exhibits enriched performance for digital logic gates in 16 nm process technology. The assessment of these performance metrics includes energy-delay product (EDP and power-delay product (PDP of inverter and NOR and NAND gates, forming the building blocks for ULSI. The evaluation of EDP and PDP is carried out for an interconnect length that ranges up to 100 μm. An analysis, based on the drain and gate current-voltage (Id-Vd and Id-Vg, for subthreshold swing (SS, drain-induced barrier lowering (DIBL, and current on/off ratio for circuit implementation is given. GNRFET can overcome the short-channel effects that are prevalent in sub-100 nm Si MOSFET. GNRFET provides reduced EDP and PDP one order of magnitude that is lower than that of a MOSFET. Even though the GNRFET is energy efficient, the circuit performance of the device is limited by the interconnect capacitances.

Aging memories: differential decay of episodic memory components.

Science.gov (United States)

Talamini, Lucia M; Gorree, Eva

2012-05-17

Some memories about events can persist for decades, even a lifetime. However, recent memories incorporate rich sensory information, including knowledge on the spatial and temporal ordering of event features, while old memories typically lack this "filmic" quality. We suggest that this apparent change in the nature of memories may reflect a preferential loss of hippocampus-dependent, configurational information over more cortically based memory components, including memory for individual objects. The current study systematically tests this hypothesis, using a new paradigm that allows the contemporaneous assessment of memory for objects, object pairings, and object-position conjunctions. Retention of each memory component was tested, at multiple intervals, up to 3 mo following encoding. The three memory subtasks adopted the same retrieval paradigm and were matched for initial difficulty. Results show differential decay of the tested episodic memory components, whereby memory for configurational aspects of a scene (objects' co-occurrence and object position) decays faster than memory for featured objects. Interestingly, memory requiring a visually detailed object representation decays at a similar rate as global object recognition, arguing against interpretations based on task difficulty and against the notion that (visual) detail is forgotten preferentially. These findings show that memories undergo qualitative changes as they age. More specifically, event memories become less configurational over time, preferentially losing some of the higher order associations that are dependent on the hippocampus for initial fast encoding. Implications for theories of long-term memory are discussed.

Applicability of the Rivermead Behavioural Memory Test – Third Edition (RBMT-3 in Korsakoff's syndrome and chronic alcoholics

Directory of Open Access Journals (Sweden)

Wester AJ

2013-06-01

Full Text Available Arie J Wester,1 Judith C van Herten,2 Jos IM Egger,2–4 Roy PC Kessels1,2,5 1Korsakoff Clinic, Vincent van Gogh Institute for Psychiatry, Venray, The Netherlands; 2Donders Institute for Brain, Cognition and Behavior, Radboud University Nijmegen, Nijmegen, The Netherlands; 3Centre of Excellence for Neuropsychiatry, Vincent van Gogh Institute for Psychiatry, Venray, The Netherlands; 4Behavioral Science Institute, Radboud University Nijmegen, Nijmegen, The Netherlands; 5Department of Medical Psychology, Radboud University Nijmegen Medical Centre, Nijmegen, The Netherlands Purpose: To examine the applicability of the newly developed Rivermead Behavioural Memory Test – Third Edition (RBMT-3 as an ecologically-valid memory test in patients with alcohol-related cognitive disorders. Patients and methods: An authorized Dutch translation of the RBMT-3 was developed, equivalent to the UK version, and administered to a total of 151 participants – 49 patients with amnesia due to alcoholic Korsakoff's syndrome, 49 patients with cognitive impairment and a history of chronic alcoholism, not fulfilling the Korsakoff criteria, and 53 healthy controls. Between-group comparisons were made at subtest level, and the test's diagnostic accuracy was determined. Results: Korsakoff patients performed worse than controls on all RBMT-3 subtests (all P-values < 0.0005. The alcoholism group performed worse than controls on most (all P-values < 0.02, but not all RBMT-3 subtests. Largest effects were found between the Korsakoff patients and the controls after delayed testing. The RBMT-3 had good sensitivity and adequate specificity. Conclusion: The RBMT-3 is a valid test battery to demonstrate everyday memory deficits in Korsakoff patients and non-Korsakoff patients with alcohol abuse disorder. Korsakoff patients showed an impaired performance on subtests relying on orientation, contextual memory and delayed testing. Our findings provide valuable information for treatment

Optimal proximity correction: application for flash memory design

Science.gov (United States)

Chen, Y. O.; Huang, D. L.; Sung, K. T.; Chiang, J. J.; Yu, M.; Teng, F.; Chu, Lung; Rey, Juan C.; Bernard, Douglas A.; Li, Jiangwei; Li, Junling; Moroz, V.; Boksha, Victor V.

1998-06-01

Proximity Correction is the technology for which the most of IC manufacturers are committed already. The final intended result of correction is affected by many factors other than the optical characteristics of the mask-stepper system, such as photoresist exposure, post-exposure bake and development parameters, etch selectivity and anisotropy, and underlying topography. The most advanced industry and research groups already reported immediate need to consider wafer topography as one of the major components during a Proximity Correction procedure. In the present work we are discussing the corners rounding effect (which eventually cause electrical leakage) observed for the elements of Poly2 layer for a Flash Memory Design. It was found that the rounding originated by three- dimensional effects due to variation of photoresist thickness resulting from the non-planar substrate. Our major goal was to understand the reasons and correct corner rounding. As a result of this work highly effective layout correction methodology was demonstrated and manufacturable Depth Of Focus was achieved. Another purpose of the work was to demonstrate complete integration flow for a Flash Memory Design based on photolithography; deposition/etch; ion implantation/oxidation/diffusion; and device simulators.

Physical principles and current status of emerging non-volatile solid state memories

Science.gov (United States)

Wang, L.; Yang, C.-H.; Wen, J.

2015-07-01

Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for

Electroconvulsive therapy and memory loss: a personal journey.

Science.gov (United States)

Donahue, A B

2000-06-01

The cause for the significant gap between research and anecdotal evidence regarding the extent of some memory loss after electroconvulsive therapy (ECT) has never been adequately explained. A patient's development of awareness and self-education about her severe side effects from ECT raises questions regarding many current assumptions about memory loss. ECT-specific studies, which conclude that side effects are short term and narrow in scope, have serious limitations, including the fact that they do not take into account broader scientific knowledge about memory function. Because of the potential for devastating and permanent memory loss with ECT, informed consent needs significant enhancement until advancing research on both improved techniques and on better predictive knowledge regarding memory loss progresses to making a greater impact on clinical applications. Follow-up care and education in coping skills need to be a regular part of ECT practice when patients do experience severe effects.

Configurable unitary transformations and linear logic gates using quantum memories.

Science.gov (United States)

Campbell, G T; Pinel, O; Hosseini, M; Ralph, T C; Buchler, B C; Lam, P K

2014-08-08

We show that a set of optical memories can act as a configurable linear optical network operating on frequency-multiplexed optical states. Our protocol is applicable to any quantum memories that employ off-resonant Raman transitions to store optical information in atomic spins. In addition to the configurability, the protocol also offers favorable scaling with an increasing number of modes where N memories can be configured to implement arbitrary N-mode unitary operations during storage and readout. We demonstrate the versatility of this protocol by showing an example where cascaded memories are used to implement a conditional cz gate.

Memory Compression Techniques for Network Address Management in MPI

Energy Technology Data Exchange (ETDEWEB)

Guo, Yanfei; Archer, Charles J.; Blocksome, Michael; Parker, Scott; Bland, Wesley; Raffenetti, Ken; Balaji, Pavan

2017-05-29

MPI allows applications to treat processes as a logical collection of integer ranks for each MPI communicator, while internally translating these logical ranks into actual network addresses. In current MPI implementations the management and lookup of such network addresses use memory sizes that are proportional to the number of processes in each communicator. In this paper, we propose a new mechanism, called AV-Rankmap, for managing such translation. AV-Rankmap takes advantage of logical patterns in rank-address mapping that most applications naturally tend to have, and it exploits the fact that some parts of network address structures are naturally more performance critical than others. It uses this information to compress the memory used for network address management. We demonstrate that AV-Rankmap can achieve performance similar to or better than that of other MPI implementations while using significantly less memory.

Characterization of gadolinium oxide thin films with CF{sub 4} plasma treatment for resistive switching memory applications

Energy Technology Data Exchange (ETDEWEB)

Wang, Jer-Chyi, E-mail: jcwang@mail.cgu.edu.tw [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Ye, Yu-Ren [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Lai, Chao-Sung, E-mail: cslai@mail.cgu.edu.tw [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Lin, Chih-Ting [Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Lu, Hsin-Chun [Department of Chemical and Materials Engineering, Chang Gung University, Kwei-Shan 333, Tao-Yuan, Taiwan (China); Wu, Chih-I [Graduated Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China); Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan (China); Wang, Po-Sheng [Graduated Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 106, Taiwan (China)

2013-07-01

The effect of the CF{sub 4} plasma treatment on the gadolinium oxide (Gd{sub x}O{sub y}) thin films for the resistive random access memory (RRAM) applications was investigated. The material properties of the fluorine incorporated Gd{sub x}O{sub y} films were analyzed by the X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS) and ultraviolet–visible spectroscopy (UV–VIS). Further, the set and reset voltages of the Pt/Gd{sub x}O{sub y}/W RRAM devices with the CF{sub 4} plasma treatment were effectively reduced to −1.15 and 2.1 V respectively owing to the low Schottky barrier height. The formation of Gd-F bonds can prevent the oxygen atoms from out-diffusing through Pt grain boundaries into the atmosphere, leading to the superior retention characteristics for over 10{sup 4} s. The CF{sub 4} plasma treated Gd{sub x}O{sub y} RRAMs can sustain a resistance ratio of 10{sup 2} for more than 800 times stable set/reset cycling, suitable for future low-voltage and high-performance nonvolatile memory operation.

Exploring memory hierarchy design with emerging memory technologies

CERN Document Server

Sun, Guangyu

2014-01-01

This book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc.  The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the “memory wall.”  The authors discuss memory design from various perspectives: emerging memory technologies are employed in the memory hierarchy with novel architecture modification;  hybrid memory structure is introduced to leverage advantages from multiple memory technologies; an analytical model named “Moguls” is introduced to explore quantitatively the optimization design of a memory hierarchy; finally, the vulnerability of the CMPs to radiation-based soft errors is improved by replacing different levels of on-chip memory with STT-RAMs.   ·         Provides a holistic study of using emerging memory technologies i...

Memory development in preschool children with disabilities in the game

OpenAIRE

Viktoriya Shypikova

2013-01-01

The scientific article "Development of memory in preschool children with disabilities in the game" reveals the relevance of the application of the game as the leading activity during the preschool years to optimize the development of the mental process of memory in children with disabilities. Work on the development of children's memory in the form of a game as the most effective form, aimed at attracting the attention of professionals working with preschool children with disabilities, a...

Chemical memory reactions induced bursting dynamics in gene expression.

Science.gov (United States)

Tian, Tianhai

2013-01-01

Memory is a ubiquitous phenomenon in biological systems in which the present system state is not entirely determined by the current conditions but also depends on the time evolutionary path of the system. Specifically, many memorial phenomena are characterized by chemical memory reactions that may fire under particular system conditions. These conditional chemical reactions contradict to the extant stochastic approaches for modeling chemical kinetics and have increasingly posed significant challenges to mathematical modeling and computer simulation. To tackle the challenge, I proposed a novel theory consisting of the memory chemical master equations and memory stochastic simulation algorithm. A stochastic model for single-gene expression was proposed to illustrate the key function of memory reactions in inducing bursting dynamics of gene expression that has been observed in experiments recently. The importance of memory reactions has been further validated by the stochastic model of the p53-MDM2 core module. Simulations showed that memory reactions is a major mechanism for realizing both sustained oscillations of p53 protein numbers in single cells and damped oscillations over a population of cells. These successful applications of the memory modeling framework suggested that this innovative theory is an effective and powerful tool to study memory process and conditional chemical reactions in a wide range of complex biological systems.

Collaboration Expertise in Medicine - No Evidence for Cross-Domain Application from a Memory Retrieval Study.

Directory of Open Access Journals (Sweden)

Jan Kiesewetter

Full Text Available Is there evidence for expertise on collaboration and, if so, is there evidence for cross-domain application? Recall of stimuli was used to measure so-called internal collaboration scripts of novices and experts in two studies. Internal collaboration scripts refer to an individual's knowledge about how to interact with others in a social situation. METHOD—Ten collaboration experts and ten novices of the content domain social science were presented with four pictures of people involved in collaborative activities. The recall texts were coded, distinguishing between superficial and collaboration script information. RESULTS—Experts recalled significantly more collaboration script information (M = 25.20; SD = 5.88 than did novices (M = 13.80; SD = 4.47. Differences in superficial information were not found.Study 2 tested whether the differences found in Study 1 could be replicated. Furthermore, the cross-domain application of internal collaboration scripts was explored. METHOD—Twenty collaboration experts and 20 novices of the content domain medicine were presented with four pictures and four videos of their content domain and a video and picture of another content domain. All stimuli showed collaborative activities typical for the respective content domains. RESULTS—As in Study 1, experts recalled significantly more collaboration script information of their content domain (M = 71.65; SD = 33.23 than did novices (M = 54.25; SD = 15.01. For the novices, no differences were found for the superficial information nor for the retrieval of collaboration script information recalled after the other content domain stimuli.There is evidence for expertise on collaboration in memory tasks. The results show that experts hold substantially more collaboration script information than did novices. Furthermore, the differences between collaboration novices and collaboration experts occurred only in their own content domain, indicating that internal

Collaboration Expertise in Medicine - No Evidence for Cross-Domain Application from a Memory Retrieval Study.

Science.gov (United States)

Kiesewetter, Jan; Fischer, Frank; Fischer, Martin R

2016-01-01

Is there evidence for expertise on collaboration and, if so, is there evidence for cross-domain application? Recall of stimuli was used to measure so-called internal collaboration scripts of novices and experts in two studies. Internal collaboration scripts refer to an individual's knowledge about how to interact with others in a social situation. METHOD— Ten collaboration experts and ten novices of the content domain social science were presented with four pictures of people involved in collaborative activities. The recall texts were coded, distinguishing between superficial and collaboration script information. RESULTS— Experts recalled significantly more collaboration script information (M = 25.20; SD = 5.88) than did novices (M = 13.80; SD = 4.47). Differences in superficial information were not found. Study 2 tested whether the differences found in Study 1 could be replicated. Furthermore, the cross-domain application of internal collaboration scripts was explored. METHOD— Twenty collaboration experts and 20 novices of the content domain medicine were presented with four pictures and four videos of their content domain and a video and picture of another content domain. All stimuli showed collaborative activities typical for the respective content domains. RESULTS— As in Study 1, experts recalled significantly more collaboration script information of their content domain (M = 71.65; SD = 33.23) than did novices (M = 54.25; SD = 15.01). For the novices, no differences were found for the superficial information nor for the retrieval of collaboration script information recalled after the other content domain stimuli. There is evidence for expertise on collaboration in memory tasks. The results show that experts hold substantially more collaboration script information than did novices. Furthermore, the differences between collaboration novices and collaboration experts occurred only in their own content domain, indicating that internal collaboration scripts

Virtual memory support for distributed computing environments using a shared data object model

Science.gov (United States)

Huang, F.; Bacon, J.; Mapp, G.

1995-12-01

Conventional storage management systems provide one interface for accessing memory segments and another for accessing secondary storage objects. This hinders application programming and affects overall system performance due to mandatory data copying and user/kernel boundary crossings, which in the microkernel case may involve context switches. Memory-mapping techniques may be used to provide programmers with a unified view of the storage system. This paper extends such techniques to support a shared data object model for distributed computing environments in which good support for coherence and synchronization is essential. The approach is based on a microkernel, typed memory objects, and integrated coherence control. A microkernel architecture is used to support multiple coherence protocols and the addition of new protocols. Memory objects are typed and applications can choose the most suitable protocols for different types of object to avoid protocol mismatch. Low-level coherence control is integrated with high-level concurrency control so that the number of messages required to maintain memory coherence is reduced and system-wide synchronization is realized without severely impacting the system performance. These features together contribute a novel approach to the support for flexible coherence under application control.

A Compute Capable SSD Architecture for Next-Generation Non-volatile Memories

Energy Technology Data Exchange (ETDEWEB)

De, Arup [Univ. of California, San Diego, CA (United States)

2014-01-01

Existing storage technologies (e.g., disks and ash) are failing to cope with the processor and main memory speed and are limiting the overall perfor- mance of many large scale I/O or data-intensive applications. Emerging fast byte-addressable non-volatile memory (NVM) technologies, such as phase-change memory (PCM), spin-transfer torque memory (STTM) and memristor are very promising and are approaching DRAM-like performance with lower power con- sumption and higher density as process technology scales. These new memories are narrowing down the performance gap between the storage and the main mem- ory and are putting forward challenging problems on existing SSD architecture, I/O interface (e.g, SATA, PCIe) and software. This dissertation addresses those challenges and presents a novel SSD architecture called XSSD. XSSD o oads com- putation in storage to exploit fast NVMs and reduce the redundant data tra c across the I/O bus. XSSD o ers a exible RPC-based programming framework that developers can use for application development on SSD without dealing with the complication of the underlying architecture and communication management. We have built a prototype of XSSD on the BEE3 FPGA prototyping system. We implement various data-intensive applications and achieve speedup and energy ef- ciency of 1.5-8.9 and 1.7-10.27 respectively. This dissertation also compares XSSD with previous work on intelligent storage and intelligent memory. The existing ecosystem and these new enabling technologies make this system more viable than earlier ones.

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications.

Science.gov (United States)

Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-04-09

As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 10 6 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.

45 CFR 2490.102 - Application.

Science.gov (United States)

2010-10-01

... 45 Public Welfare 4 2010-10-01 2010-10-01 false Application. 2490.102 Section 2490.102 Public Welfare Regulations Relating to Public Welfare (Continued) JAMES MADISON MEMORIAL FELLOWSHIP FOUNDATION... MADISON MEMORIAL FELLOWSHIP FOUNDATION § 2490.102 Application. This part (§§ 2490.101-2490.170) applies to...

Metal-organic molecular device for non-volatile memory storage

International Nuclear Information System (INIS)

Radha, B.; Sagade, Abhay A.; Kulkarni, G. U.

2014-01-01

Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit non-volatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film.

MEMORY MODULATION

Science.gov (United States)

Roozendaal, Benno; McGaugh, James L.

2011-01-01

Our memories are not all created equally strong: Some experiences are well remembered while others are remembered poorly, if at all. Research on memory modulation investigates the neurobiological processes and systems that contribute to such differences in the strength of our memories. Extensive evidence from both animal and human research indicates that emotionally significant experiences activate hormonal and brain systems that regulate the consolidation of newly acquired memories. These effects are integrated through noradrenergic activation of the basolateral amygdala which regulates memory consolidation via interactions with many other brain regions involved in consolidating memories of recent experiences. Modulatory systems not only influence neurobiological processes underlying the consolidation of new information, but also affect other mnemonic processes, including memory extinction, memory recall and working memory. In contrast to their enhancing effects on consolidation, adrenal stress hormones impair memory retrieval and working memory. Such effects, as with memory consolidation, require noradrenergic activation of the basolateral amygdala and interactions with other brain regions. PMID:22122145

MEMORY EFFICIENT SEMI-GLOBAL MATCHING

Directory of Open Access Journals (Sweden)

H. Hirschmüller

2012-07-01

Full Text Available Semi-GlobalMatching (SGM is a robust stereo method that has proven its usefulness in various applications ranging from aerial image matching to driver assistance systems. It supports pixelwise matching for maintaining sharp object boundaries and fine structures and can be implemented efficiently on different computation hardware. Furthermore, the method is not sensitive to the choice of parameters. The structure of the matching algorithm is well suited to be processed by highly paralleling hardware e.g. FPGAs and GPUs. The drawback of SGM is the temporary memory requirement that depends on the number of pixels and the disparity range. On the one hand this results in long idle times due to the bandwidth limitations of the external memory and on the other hand the capacity bounds are quickly reached. A full HD image with a size of 1920 × 1080 pixels and a disparity range of 512 pixels requires already 1 billion elements, which is at least several GB of RAM, depending on the element size, wich are not available at standard FPGA- and GPUboards. The novel memory efficient (eSGM method is an advancement in which the amount of temporary memory only depends on the number of pixels and not on the disparity range. This permits matching of huge images in one piece and reduces the requirements of the memory bandwidth for real-time mobile robotics. The feature comes at the cost of 50% more compute operations as compared to SGM. This overhead is compensated by the previously idle compute logic within the FPGA and the GPU and therefore results in an overall performance increase. We show that eSGM produces the same high quality disparity images as SGM and demonstrate its performance both on an aerial image pair with 142 MPixel and within a real-time mobile robotic application. We have implemented the new method on the CPU, GPU and FPGA.We conclude that eSGM is advantageous for a GPU implementation and essential for an implementation on our FPGA.

A unitary signal-detection model of implicit and explicit memory.

Science.gov (United States)

Berry, Christopher J; Shanks, David R; Henson, Richard N A

2008-10-01

Do dissociations imply independent systems? In the memory field, the view that there are independent implicit and explicit memory systems has been predominantly supported by dissociation evidence. Here, we argue that many of these dissociations do not necessarily imply distinct memory systems. We review recent work with a single-system computational model that extends signal-detection theory (SDT) to implicit memory. SDT has had a major influence on research in a variety of domains. The current work shows that it can be broadened even further in its range of application. Indeed, the single-system model that we present does surprisingly well in accounting for some key dissociations that have been taken as evidence for independent implicit and explicit memory systems.

Olfactory memory: a case study in cognitive psychology.

Science.gov (United States)

Annett, J M

1996-05-01

Over the last decade, interest in the general applicability of psychological research has increased significantly, leading to doubts among some critics of cognitive psychology regarding the usefulness of the modern information-processing approach. In particular, current cognitive models of memory address mainly visual and verbal information processing, with little acknowledgement of the existence of other sensory modalities. However, since the mid-1970's, the literature on olfactory memory has expanded rapidly, and it has remained relatively independent of mainstream memory research. This article outlines the olfactory literature, which has focused principally on examination of the Proustian characteristics of smell. The relationship between olfactory and other types of memory is also examined. The author notes that there is evidence that models of memory intended to be general have taken insufficient account of findings from olfaction and other sensory modalities, an approach that could be considered symptomatic of dangerous tendency to base purportedly general theories on databases that are too narrow.

Memory handling in the ATLAS submission system from job definition to sites limits

CERN Document Server

Forti, Alessandra; The ATLAS collaboration

2016-01-01

The ATLAS workload management system is a pilot system based on a late binding philosophy that avoided for many years to pass fine grained job requirements to the batch system. In particular for memory most of the requirements were set to request 4GB vmem as defined in the EGI portal VO card, i.e. 2GB RAM + 2GB swap. However in the past few years several changes have happened in the operating system kernel and in the applications that make such a definition of memory to use for requesting slots obsolete and ATLAS has introduced the new PRODSYS2 workload management which has a more flexible system to evaluate the memory requirements and to submit to appropriate queues. The work stemmed in particular from the introduction of 64bit multicore workloads and the increased memory requirements of some of the single core applications. This paper describes the overall review and changes of memory handling starting from the definition of tasks, the way tasks memory requirements are set using scout jobs and the new memor...

Ferroelectric tunneling element and memory applications which utilize the tunneling element

Science.gov (United States)

Kalinin, Sergei V [Knoxville, TN; Christen, Hans M [Knoxville, TN; Baddorf, Arthur P [Knoxville, TN; Meunier, Vincent [Knoxville, TN; Lee, Ho Nyung [Oak Ridge, TN

2010-07-20

A tunneling element includes a thin film layer of ferroelectric material and a pair of dissimilar electrically-conductive layers disposed on opposite sides of the ferroelectric layer. Because of the dissimilarity in composition or construction between the electrically-conductive layers, the electron transport behavior of the electrically-conductive layers is polarization dependent when the tunneling element is below the Curie temperature of the layer of ferroelectric material. The element can be used as a basis of compact 1R type non-volatile random access memory (RAM). The advantages include extremely simple architecture, ultimate scalability and fast access times generic for all ferroelectric memories.

Memory architecture

NARCIS (Netherlands)

2012-01-01

A memory architecture is presented. The memory architecture comprises a first memory and a second memory. The first memory has at least a bank with a first width addressable by a single address. The second memory has a plurality of banks of a second width, said banks being addressable by components

Autobiographical memory compromise in Alzheimer's disease: a cognitive and clinical overview.

Science.gov (United States)

El Haj, Mohamad; Roche, Jean; Gallouj, Karim; Gandolphe, Marie-Charlotte

2017-12-01

Autobiographical memory refers to memory for personal information. The compromise of autobiographical memory in Alzheimer's disease (AD) results in a loss of knowledge about events and facts that defined the patients' life, and consequently, degradation of their self-knowledge and sense of identity. The compromise of autobiographical memory in AD can be attributed to a diminished subjective experience of memory and a diminished sense of the self. Our review provides a comprehensive overview of cognitive and clinical processes that may be involved in difficulties to retrieve autobiographical memories in Alzheimer's disease. Our review also proposes a theoretical model according to which, the diminished ability to retrieve contextual information and the overgenerality of recall result in a diminished subjective experience of past and future thinking. Besides its theoretical contribution, our review proposes clinical applicability for evaluation and rehabilitation of autobiographical memory in AD.

The ethics of molecular memory modification.

Science.gov (United States)

Hui, Katrina; Fisher, Carl E

2015-07-01

Novel molecular interventions have recently shown the potential to erase, enhance and alter specific long-term memories. Unique features of this form of memory modification call for a close examination of its possible applications. While there have been discussions of the ethics of memory modification in the literature, molecular memory modification (MMM) can provide special insights. Previously raised ethical concerns regarding memory enhancement, such as safety issues, the 'duty to remember', selfhood and personal identity, require re-evaluation in light of MMM. As a technology that exploits the brain's updating processes, MMM helps correct the common misconception that memory is a static entity by demonstrating how memory is plastic and subject to revision even in the absence of external manipulation. Furthermore, while putatively safer than other speculative technologies because of its high specificity, MMM raises notable safety issues, including potential insidious effects on the agent's emotions and personal identity. Nonetheless, MMM possesses characteristics of a more permissible form of modification, not only because it is theoretically safer, but because its unique mechanism of action requires a heightened level of cooperation from the agent. Discussions of memory modification must consider the specific mechanisms of action, which can alter the weight and relevance of various ethical concerns. MMM also highlights the need for conceptual accuracy regarding the term 'enhancement'; this umbrella term will have to be differentiated as new technologies are applied to a widening array of purposes. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://group.bmj.com/group/rights-licensing/permissions.

Detailed sensory memory, sloppy working memory

Directory of Open Access Journals (Sweden)

Ilja G Sligte

2010-10-01

Full Text Available Visual short-term memory (VSTM enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity limits and progressively longer lifetimes. Still, the resolution (or amount of visual detail of each VSTM stage has remained unexplored and we test this in the present study. We presented people with a change detection task that measures the capacity of all three forms of VSTM, and we added an identification display after each change trial that required people to identify the pre-change object. Accurate change detection plus pre-change identification requires subjects to have a high-resolution representation of the pre-change object, whereas change detection or identification only can be based on the hunch that something has changed, without exactly knowing what was presented before. We observed that people maintained 6.1 objects in iconic memory, 4.6 objects in fragile VSTM and 2.1 objects in visual working memory. Moreover, when people detected the change, they could also identify the pre-change object on 88 percent of the iconic memory trials, on 71 percent of the fragile VSTM trials and merely on 53 percent of the visual working memory trials. This suggests that people maintain many high-resolution representations in iconic memory and fragile VSTM, but only one high-resolution object representation in visual working memory.

Detailed sensory memory, sloppy working memory.

Science.gov (United States)

Sligte, Ilja G; Vandenbroucke, Annelinde R E; Scholte, H Steven; Lamme, Victor A F

2010-01-01

Visual short-term memory (VSTM) enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity limits and progressively longer lifetimes. Still, the resolution (or amount of visual detail) of each VSTM stage has remained unexplored and we test this in the present study. We presented people with a change detection task that measures the capacity of all three forms of VSTM, and we added an identification display after each change trial that required people to identify the "pre-change" object. Accurate change detection plus pre-change identification requires subjects to have a high-resolution representation of the "pre-change" object, whereas change detection or identification only can be based on the hunch that something has changed, without exactly knowing what was presented before. We observed that people maintained 6.1 objects in iconic memory, 4.6 objects in fragile VSTM, and 2.1 objects in visual working memory. Moreover, when people detected the change, they could also identify the pre-change object on 88% of the iconic memory trials, on 71% of the fragile VSTM trials and merely on 53% of the visual working memory trials. This suggests that people maintain many high-resolution representations in iconic memory and fragile VSTM, but only one high-resolution object representation in visual working memory.

Concurrent Operations of O2-Tree on Shared Memory Multicore Architectures

OpenAIRE

Daniel Ohene-Kwofie; E. J. Otoo1, Gideon Nimako

2014-01-01

Modern computer architectures provide high performance computing capability by having multiple CPU cores. Such systems are also typically associated with very large main-memory capacities, thereby allowing them to be used for fast processing of in-memory database applications. However, most of the concurrency control mechanism associated with the index structures of these memory resident databases do not scale well, under high transaction rates. This paper presents the O2-Tree, a fast main me...

Investigations of binary and ternary phase change alloys for future memory applications

International Nuclear Information System (INIS)

Rausch, Pascal

2012-01-01

The understanding of phase change materials is of great importance because it enables us to predict properties and tailor alloys which might be even better suitable to tackle challenges of future memory applications. Within this thesis two topics have been approached: on the one hand the understanding of the alloy In 3 Sb 1 Te 2 and on the other hand the so called resistivity drift of amorphous Ge-Sn-Te phase change materials. The main topic covers an in depth discussion of the ternary alloy In 3 Sb 1 Te 2 . At first glance, this alloy does not fit into the established concepts of phase alloys: e.g. the existence of resonant bonding in the crystalline phase is not obvious and the number of p-electrons is very low compared to other phase change alloys. Furthermore amorphous phase change alloys with high indium content are usually not discussed in literature, an exception being the recent work by Spreafico et al. on InGeTe 2 . For the first time a complete description of In 3 Sb 1 Te 2 alloy is given in this work for the crystalline phase, amorphous phase and crystallization process. In addition comparisons are drawn to typical phase change materials like Ge 2 Sb 2 Te 5 /GeTe or prototype systems like AgInTe 2 and InTe. The second topic of this thesis deals with the issue of resistivity drift, i.e. the increase of resistivity of amorphous phase change alloys with aging. This drift effect greatly hampers the introduction of multilevel phase change memory devices into the market. Recently a systematic decrease of drift coefficient with stoichiometry has been observed in our group going from GeTe over Ge 3 Sn 1 Te 4 to Ge 2 Sn 2 Te 4 . These alloys are investigated with respect to constraint theory.

Memory controllers for real-time embedded systems predictable and composable real-time systems

CERN Document Server

Akesson, Benny

2012-01-01

  Verification of real-time requirements in systems-on-chip becomes more complex as more applications are integrated. Predictable and composable systems can manage the increasing complexity using formal verification and simulation.  This book explains the concepts of predictability and composability and shows how to apply them to the design and analysis of a memory controller, which is a key component in any real-time system. This book is generally intended for readers interested in Systems-on-Chips with real-time applications.   It is especially well-suited for readers looking to use SDRAM memories in systems with hard or firm real-time requirements. There is a strong focus on real-time concepts, such as predictability and composability, as well as a brief discussion about memory controller architectures for high-performance computing. Readers will learn step-by-step how to go from an unpredictable SDRAM memory, offering highly variable bandwidth and latency, to a predictable and composable shared memory...

Bipolar resistive switching properties of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} thin film for flexible memory applications

Energy Technology Data Exchange (ETDEWEB)

Wu, Zhipeng; Zhu, Jun; Zhou, Yunxia; Liu, Xingpeng [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu (China)

2018-01-15

An Au/Ni/Hf{sub 0.5}Zr{sub 0.5}O{sub 2}/Au flexible memory device fabricated on a polyethylene terephthalate substrate was studied for flexible resistive random access memory applications. A typical bipolar resistive switching behavior was revealed with an OFF/ON ratio of approximately 15. The reproducibility and uniformity were investigated using 100 repetitive write/erase cycles. The retention property did not degrade for up to 5 x 10{sup 4} s, and the resistive switching properties did not degrade even under bending conditions, which indicated good mechanical flexibility. The current-voltage characteristics of the memory device show a Poole-Frenkel emission conduction mechanism in the high-voltage region in the high-resistance state, while in the low-voltage region, the Ohmic contact and space charge limit current responded to the low-resistance state and high-resistance state, respectively. Combined with the conductance mechanism, the resistive switching behavior is attributed to conductive filaments forming and rupturing due to oxygen vacancies migrating under the external driving electric field. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Medical applications of accelerators at Tata Memorial Centre

International Nuclear Information System (INIS)

Dinshaw, K.A.

2003-01-01

The Tata Memorial Centre constitutes the national comprehensive cancer centre for the prevention, diagnosis, treatment and research on cancer. It is well equipped with sophisticated state-of-the-art equipment capable of delivering External Beam Radiotherapy (Ebert) and Brachytherapy. Nearly 400 patients receive Ebert daily at the institute from a team of highly skilled and dedicated radiation oncologists, medical physicists and technologists, making it one of the busiest centres in the country

Detailed sensory memory, sloppy working memory

NARCIS (Netherlands)

Sligte, I.G.; Vandenbroucke, A.R.E.; Scholte, H.S.; Lamme, V.A.F.

2010-01-01

Visual short-term memory (VSTM) enables us to actively maintain information in mind for a brief period of time after stimulus disappearance. According to recent studies, VSTM consists of three stages - iconic memory, fragile VSTM, and visual working memory - with increasingly stricter capacity

A real-time multichannel memory controller and optimal mapping of memory clients to memory channels

NARCIS (Netherlands)

Gomony, M.D.; Akesson, K.B.; Goossens, K.G.W.

2015-01-01

Ever-increasing demands for main memory bandwidth and memory speed/power tradeoff led to the introduction of memories with multiple memory channels, such as Wide IO DRAM. Efficient utilization of a multichannel memory as a shared resource in multiprocessor real-time systems depends on mapping of the

Impact of memory bottleneck on the performance of graphics processing units

Science.gov (United States)

Son, Dong Oh; Choi, Hong Jun; Kim, Jong Myon; Kim, Cheol Hong

2015-12-01

Recent graphics processing units (GPUs) can process general-purpose applications as well as graphics applications with the help of various user-friendly application programming interfaces (APIs) supported by GPU vendors. Unfortunately, utilizing the hardware resource in the GPU efficiently is a challenging problem, since the GPU architecture is totally different to the traditional CPU architecture. To solve this problem, many studies have focused on the techniques for improving the system performance using GPUs. In this work, we analyze the GPU performance varying GPU parameters such as the number of cores and clock frequency. According to our simulations, the GPU performance can be improved by 125.8% and 16.2% on average as the number of cores and clock frequency increase, respectively. However, the performance is saturated when memory bottleneck problems incur due to huge data requests to the memory. The performance of GPUs can be improved as the memory bottleneck is reduced by changing GPU parameters dynamically.

The Benefit of Attention-to-Memory Depends on the Interplay of Memory Capacity and Memory Load

Science.gov (United States)

Lim, Sung-Joo; Wöstmann, Malte; Geweke, Frederik; Obleser, Jonas

2018-01-01

Humans can be cued to attend to an item in memory, which facilitates and enhances the perceptual precision in recalling this item. Here, we demonstrate that this facilitating effect of attention-to-memory hinges on the overall degree of memory load. The benefit an individual draws from attention-to-memory depends on her overall working memory performance, measured as sensitivity (d′) in a retroactive cue (retro-cue) pitch discrimination task. While listeners maintained 2, 4, or 6 auditory syllables in memory, we provided valid or neutral retro-cues to direct listeners’ attention to one, to-be-probed syllable in memory. Participants’ overall memory performance (i.e., perceptual sensitivity d′) was relatively unaffected by the presence of valid retro-cues across memory loads. However, a more fine-grained analysis using psychophysical modeling shows that valid retro-cues elicited faster pitch-change judgments and improved perceptual precision. Importantly, as memory load increased, listeners’ overall working memory performance correlated with inter-individual differences in the degree to which precision improved (r = 0.39, p = 0.029). Under high load, individuals with low working memory profited least from attention-to-memory. Our results demonstrate that retrospective attention enhances perceptual precision of attended items in memory but listeners’ optimal use of informative cues depends on their overall memory abilities. PMID:29520246

The Benefit of Attention-to-Memory Depends on the Interplay of Memory Capacity and Memory Load

Directory of Open Access Journals (Sweden)

Sung-Joo Lim

2018-02-01

Full Text Available Humans can be cued to attend to an item in memory, which facilitates and enhances the perceptual precision in recalling this item. Here, we demonstrate that this facilitating effect of attention-to-memory hinges on the overall degree of memory load. The benefit an individual draws from attention-to-memory depends on her overall working memory performance, measured as sensitivity (d′ in a retroactive cue (retro-cue pitch discrimination task. While listeners maintained 2, 4, or 6 auditory syllables in memory, we provided valid or neutral retro-cues to direct listeners’ attention to one, to-be-probed syllable in memory. Participants’ overall memory performance (i.e., perceptual sensitivity d′ was relatively unaffected by the presence of valid retro-cues across memory loads. However, a more fine-grained analysis using psychophysical modeling shows that valid retro-cues elicited faster pitch-change judgments and improved perceptual precision. Importantly, as memory load increased, listeners’ overall working memory performance correlated with inter-individual differences in the degree to which precision improved (r = 0.39, p = 0.029. Under high load, individuals with low working memory profited least from attention-to-memory. Our results demonstrate that retrospective attention enhances perceptual precision of attended items in memory but listeners’ optimal use of informative cues depends on their overall memory abilities.

Characterization of origami shape memory metamaterials (SMMM) made of bio-polymer blends

Science.gov (United States)

Kshad, Mohamed Ali E.; Naguib, Hani E.

2016-04-01

Shape memory materials (SMMs) are materials that can return to their virgin state and release mechanically induced strains by external stimuli. Shape memory polymers (SMPs) are a class of SMMs that show a high shape recoverability and which have attractive potential for structural applications. In this paper, we experimentally study the shape memory effect of origami based metamaterials. The main focus is on the Muira origami metamaterials. The fabrication technique used to produce origami structure is direct molding where all the geometrical features are molded from thermally virgin polymers without post folding of flat sheets. The study shows experimental investigations of shape memory metamaterials (SMMMs) made of SMPs that can be used in different applications such as medicine, robotics, and lightweight structures. The origami structure made from SMP blends, activated with uniform heating. The effect of blend composition on the shape memory behavior was studied. Also the influence of the thermomechanical and the viscoelastic properties of origami unit cell on the activation process have been discussed, and stress relaxation and shape recovery were investigated. Activation process of the unit cell has been demonstrated.

Novel Shape-Memory Polymer with Two Transition Temperature Based on Two Different Memory Mechanism

Institute of Scientific and Technical Information of China (English)

Liu Guoqin; Ding Xiaobing; Cao Yiping; Zheng Zhaohui; Peng Yuxing

2004-01-01

As an important kind of intelligent materials, shape-memory materials have been received increasing attention on account of their interesting properties and potential applications in recent years. Particularly, the rise of shape-memory polymers by far surpasses well-known metallic shape-memory alloys in their shape-memory properties. The advantages of polymers compared to other materials are their easier availability and their wide range of mechanical and physical properties. The polymers designed to exhibit a shape-memory effect require two components on the molecular level: crosslinks to determine the permanent shape and switching segments with Ttrans to fix the temporary shape. Up to now almost all papers on shape-memory polymers introduce switching segments with the covalent linking method. On the other hand, only several cases concern non-covalent interaction. However, the research works mentioned above is based on a single Ttrans (i.e., Tm or Tg).Following our previous work, here, we first report a novel kind of polymer consisted of PMMA-PEG semi-interpenetrating polymer networks (semi-IPN), which exhibiting independently two shape memory effects based on Tm and Tg, respectively. This result can also extend the shape memory polymer categories from one Ttrans to two Ttrans, and the combination of Tm and Tg give rise to an extremely excellent shape-memory effect.Two different shape memory behaviors of this material based on two transition temperatures were evaluated by bending test as follows: a straight strip of the specimen was folded at a temperature above Ttrans and kept in this shape. The so-deformed sample was cooled down to a temperature Tlow＜ Ttrans and the deforming stress were released. When the sample was heated up to the measuring temperature Thigh ＞ Ttrans, it recovered its initial shape. The deformation angle θ f varied as a function of time and the ratio of the recovery was defined as θ f /180. The PMMA-PEG polymer behaved as a hard plastic

[Overgeneral autobiographical memory in depressive disorders].

Science.gov (United States)

Dutra, Tarcísio Gomes; Kurtinaitis, Laila da Camara Lima; Cantilino, Amaury; Vasconcelos, Maria Carolina Souto de; Hazin, Izabel; Sougey, Everton Botelho

2012-01-01

This article aims to review studies focusing on the relationship between overgeneral autobiographical memory and depressive disorders. Such characteristic has attracted attention because of its relationship with a poor ability to solve problems and to imagine the future, as well as with the maintenance and a poor prognosis of depression. Data were collected through a systematic search on LILACS, SciELO, MEDLINE, and IBECS databases, and also on the health sciences records of Portal de Periódicos da Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES), a Brazilian journal database, focusing on articles published between 2000 and 2010. The following keywords were used: memória autobiográfica, supergeneralização da memória autobiográfica, and memória autobiográfica e depressão in Portuguese; and autobiographical memory, overgeneral autobiographical memory, and autobiographical memory and depression in English. Following application of exclusion criteria, a total of 27 studies were reviewed. Overgeneral autobiographical memory has been investigated in several depressive disorders. However, further longitudinal studies are required to confirm the relevant role of this cognitive characteristic in anamnesis and in the treatment of mood disorders.

Short-term memory in networks of dissociated cortical neurons.

Science.gov (United States)

Dranias, Mark R; Ju, Han; Rajaram, Ezhilarasan; VanDongen, Antonius M J

2013-01-30

Short-term memory refers to the ability to store small amounts of stimulus-specific information for a short period of time. It is supported by both fading and hidden memory processes. Fading memory relies on recurrent activity patterns in a neuronal network, whereas hidden memory is encoded using synaptic mechanisms, such as facilitation, which persist even when neurons fall silent. We have used a novel computational and optogenetic approach to investigate whether these same memory processes hypothesized to support pattern recognition and short-term memory in vivo, exist in vitro. Electrophysiological activity was recorded from primary cultures of dissociated rat cortical neurons plated on multielectrode arrays. Cultures were transfected with ChannelRhodopsin-2 and optically stimulated using random dot stimuli. The pattern of neuronal activity resulting from this stimulation was analyzed using classification algorithms that enabled the identification of stimulus-specific memories. Fading memories for different stimuli, encoded in ongoing neural activity, persisted and could be distinguished from each other for as long as 1 s after stimulation was terminated. Hidden memories were detected by altered responses of neurons to additional stimulation, and this effect persisted longer than 1 s. Interestingly, network bursts seem to eliminate hidden memories. These results are similar to those that have been reported from similar experiments in vivo and demonstrate that mechanisms of information processing and short-term memory can be studied using cultured neuronal networks, thereby setting the stage for therapeutic applications using this platform.

NRAM: a disruptive carbon-nanotube resistance-change memory

Science.gov (United States)

Gilmer, D. C.; Rueckes, T.; Cleveland, L.

2018-04-01

Advanced memory technology based on carbon nanotubes (CNTs) (NRAM) possesses desired properties for implementation in a host of integrated systems due to demonstrated advantages of its operation including high speed (nanotubes can switch state in picoseconds), high endurance (over a trillion), and low power (with essential zero standby power). The applicable integrated systems for NRAM have markets that will see compound annual growth rates (CAGR) of over 62% between 2018 and 2023, with an embedded systems CAGR of 115% in 2018-2023 (http://bccresearch.com/pressroom/smc/bcc-research-predicts:-nram-(finally)-to-revolutionize-computer-memory). These opportunities are helping drive the realization of a shift from silicon-based to carbon-based (NRAM) memories. NRAM is a memory cell made up of an interlocking matrix of CNTs, either touching or slightly separated, leading to low or higher resistance states respectively. The small movement of atoms, as opposed to moving electrons for traditional silicon-based memories, renders NRAM with a more robust endurance and high temperature retention/operation which, along with high speed/low power, is expected to blossom in this memory technology to be a disruptive replacement for the current status quo of DRAM (dynamic RAM), SRAM (static RAM), and NAND flash memories.

Voltage-Dependent Charge Storage in Cladded Zn0.56Cd0.44Se Quantum Dot MOS Capacitors for Multibit Memory Applications

Science.gov (United States)

Khan, J.; Lingalugari, M.; Al-Amoody, F.; Jain, F.

2013-11-01

As conventional memories approach scaling limitations, new storage methods must be utilized to increase Si yield and produce higher on-chip memory density. Use of II-VI Zn0.56Cd0.44Se quantum dots (QDs) is compatible with epitaxial gate insulators such as ZnS-ZnMgS. Voltage-dependent charging effects in cladded Zn0.56Cd0.44Se QDs are presented in a conventional metal-oxide-semiconductor capacitor structure. Charge storage capabilities in Si and ZnMgS QDs have been reported by various researchers; this work is focused on II-VI material Zn0.56Cd0.44Se QDs nucleated using photoassisted microwave plasma metalorganic chemical vapor deposition. Using capacitance-voltage hysteresis characterization, the multistep charging and discharging capabilities of the QDs at room temperature are presented. Three charging states are presented within a 10 V charging voltage range. These characteristics exemplify discrete charge states in the QD layer, perfect for multibit, QD-functionalized high-density memory applications. Multiple charge states with low operating voltage provide device characteristics that can be used for multibit storage by allowing varying charges to be stored in a QD layer based on the applied "write" voltage.

Highly Efficient Coherent Optical Memory Based on Electromagnetically Induced Transparency

Science.gov (United States)

Hsiao, Ya-Fen; Tsai, Pin-Ju; Chen, Hung-Shiue; Lin, Sheng-Xiang; Hung, Chih-Chiao; Lee, Chih-Hsi; Chen, Yi-Hsin; Chen, Yong-Fan; Yu, Ite A.; Chen, Ying-Cheng

2018-05-01

Quantum memory is an important component in the long-distance quantum communication based on the quantum repeater protocol. To outperform the direct transmission of photons with quantum repeaters, it is crucial to develop quantum memories with high fidelity, high efficiency and a long storage time. Here, we achieve a storage efficiency of 92.0 (1.5)% for a coherent optical memory based on the electromagnetically induced transparency scheme in optically dense cold atomic media. We also obtain a useful time-bandwidth product of 1200, considering only storage where the retrieval efficiency remains above 50%. Both are the best record to date in all kinds of schemes for the realization of optical memory. Our work significantly advances the pursuit of a high-performance optical memory and should have important applications in quantum information science.

Memory reconsolidation mediates the updating of hippocampal memory content

Directory of Open Access Journals (Sweden)

Jonathan L C Lee

2010-11-01

Full Text Available The retrieval or reactivation of a memory places it into a labile state, requiring a process of reconsolidation to restabilize it. This retrieval-induced plasticity is a potential mechanism for the modification of the existing memory. Following previous data supportive of a functional role for memory reconsolidation in the modification of memory strength, here I show that hippocampal memory reconsolidation also supports the updating of contextual memory content. Using a procedure that separates the learning of pure context from footshock-motivated contextual fear learning, I demonstrate doubly dissociable hippocampal mechanisms of initial context learning and subsequent updating of the neutral contextual representation to incorporate the footshock. Contextual memory consolidation was dependent upon BDNF expression in the dorsal hippocampus, whereas the footshock modification of the contextual representation required the expression of Zif268. These mechanisms match those previously shown to be selectively involved in hippocampal memory consolidation and reconsolidation, respectively. Moreover, memory reactivation is a necessary step in modifying memory content, as inhibition of hippocampal synaptic protein degradation also prevented the footshock-mediated memory modification. Finally, dorsal hippocampal knockdown of Zif268 impaired the reconsolidation of the pure contextual memory only under conditions of weak context memory training, as well as failing to disrupt contextual freezing when a strong contextual fear memory is reactivated by further conditioning. Therefore, an adaptive function of the reactivation and reconsolidation process is to enable the updating of memory content.

The Importance of Memory Specificity and Memory Coherence for the Self: Linking Two Characteristics of Autobiographical Memory

Directory of Open Access Journals (Sweden)

Elien Vanderveren

2017-12-01

Full Text Available Autobiographical memory forms a network of memories about personal experiences that defines and supports well-being and effective functioning of the self in various ways. During the last three decades, there have been two characteristics of autobiographical memory that have received special interest regarding their role in psychological well-being and psychopathology, namely memory specificity and memory coherence. Memory specificity refers to the extent to which retrieved autobiographical memories are specific (i.e., memories about a particular experience that happened on a particular day. Difficulty retrieving specific memories interferes with effective functioning of the self and is related to depression and post-traumatic stress disorder. Memory coherence refers to the narrative expression of the overall structure of autobiographical memories. It has likewise been related to psychological well-being and the occurrence of psychopathology. Research on memory specificity and memory coherence has developed as two largely independent research domains, even though they show much overlap. This raises some important theoretical questions. How do these two characteristics of autobiographical memory relate to each other, both theoretically and empirically? Additionally, how can the integration of these two facilitate our understanding of the importance of autobiographical memory for the self? In this article, we give a critical overview of memory specificity and memory coherence and their relation to the self. We link both features of autobiographical memory by describing some important similarities and by formulating hypotheses about how they might relate to each other. By situating both memory specificity and memory coherence within Conway and Pleydell-Pearce’s Self-Memory System, we make a first attempt at a theoretical integration. Finally, we suggest some new and exciting research possibilities and explain how both research fields could benefit

Memory

Science.gov (United States)

... it has to decide what is worth remembering. Memory is the process of storing and then remembering this information. There are different types of memory. Short-term memory stores information for a few ...

Quantum memory Quantum memory

Science.gov (United States)

Le Gouët, Jean-Louis; Moiseev, Sergey

2012-06-01

Interaction of quantum radiation with multi-particle ensembles has sparked off intense research efforts during the past decade. Emblematic of this field is the quantum memory scheme, where a quantum state of light is mapped onto an ensemble of atoms and then recovered in its original shape. While opening new access to the basics of light-atom interaction, quantum memory also appears as a key element for information processing applications, such as linear optics quantum computation and long-distance quantum communication via quantum repeaters. Not surprisingly, it is far from trivial to practically recover a stored quantum state of light and, although impressive progress has already been accomplished, researchers are still struggling to reach this ambitious objective. This special issue provides an account of the state-of-the-art in a fast-moving research area that makes physicists, engineers and chemists work together at the forefront of their discipline, involving quantum fields and atoms in different media, magnetic resonance techniques and material science. Various strategies have been considered to store and retrieve quantum light. The explored designs belong to three main—while still overlapping—classes. In architectures derived from photon echo, information is mapped over the spectral components of inhomogeneously broadened absorption bands, such as those encountered in rare earth ion doped crystals and atomic gases in external gradient magnetic field. Protocols based on electromagnetic induced transparency also rely on resonant excitation and are ideally suited to the homogeneous absorption lines offered by laser cooled atomic clouds or ion Coulomb crystals. Finally off-resonance approaches are illustrated by Faraday and Raman processes. Coupling with an optical cavity may enhance the storage process, even for negligibly small atom number. Multiple scattering is also proposed as a way to enlarge the quantum interaction distance of light with matter. The

Measurement of overgeneral autobiographical memory: Psychometric properties of the autobiographical memory test in young and older populations.

Science.gov (United States)

Ros, Laura; Romero, Dulce; Ricarte, Jorge J; Serrano, Juan P; Nieto, Marta; Latorre, Jose M

2018-01-01

The Autobiographical Memory Test (AMT) is the most widely used measure of overgeneral autobiographical memory (OGM). The AMT appears to have good psychometric properties, but more research is needed on the influence and applicability of individual cue words in different languages and populations. To date, no studies have evaluated its usefulness as a measure of OMG in Spanish or older populations. This work aims to analyze the applicability of the AMT in young and older Spanish samples. We administered a Spanish version of the AMT to samples of young (N = 520) and older adults (N = 155). We conducted confirmatory factor analysis (CFA), item response theory-based analysis (IRT) and differential item functioning (DIF). Results confirm the one-factor structure for the AMT. IRT analysis suggests that both groups find the AMT easy given that they generally perform well, and that it is more precise in individuals who score low on memory specificity. DIF analysis finds three items differ in their functioning depending on age group. This differential functioning of these items affects the overall AMT scores and, thus, they should be excluded from the AMT in studies comparing young and older samples. We discuss the possible implications of the samples and cue words used.

Study on temporal and spatial variations of urban land use based on land change data

Science.gov (United States)

Jiang, Ping; Liu, Yanfang; Fan, Min; Zhang, Yang

2009-10-01

With the rapid development of urbanization, demands of urban land increase in succession, hence, to analyze temporal and spatial variations of urban land use becomes more and more important. In this paper, the principle of trend surface analysis and formula of urban land sprawl index ( ULSI) are expatiated at first, and then based on land change data of Jiayu county, the author fits quadratic trend surface by choosing urban land area as dependent variable and urbanization and GDP as independent variables from 1996 to 2006, draws isoline of trend surface and residual values; and then urban land sprawl indexes of towns are calculated on the basis of urban land area of 1996 and 2006 and distribution map of ULSI is plotted. After analyzing those results, we can conclude that there is consanguineous relationship between urban land area and urbanization, economic level etc.

Future Trend of Non-Volatile Semiconductor Memory and Feasibility Study of BiCS Type Stacked Structure

OpenAIRE

渡辺, 重佳

2009-01-01

Future trend of non-volatile semiconductor memory—FeRAM, MRAM, PRAM, ReRAM—compared with NAND typeflash memory has been described based on its history, application and performance. In the realistic point of view,FeRAM and MRAM are suitable for embedded memory and main memory, and PRAM and ReRAM are promising candidatesfor main memory and mass-storage memory for multimedia. Furthermore, the feasibility study of aggressiveultra-low-cost high-speed universal non-volatile semiconductor memory has...

An FPGA Testbed for Characterizing and Mapping DOD Applications

Science.gov (United States)

2017-12-27

applications in engineering, artificial intelligence , robotics, etc. As GPUs have a massively parallel architecture with thousands of cores, applications...RC system processing elements must be able to consume/produce data at the highest possible data rates. If there are multiple memory banks , the number...memory banks and the function core for performing the specific application, and the plurality of memory banks coupled to each of the one or more digital

The contributions of handedness and working memory to episodic memory.

Science.gov (United States)

Sahu, Aparna; Christman, Stephen D; Propper, Ruth E

2016-11-01

Past studies have independently shown associations of working memory and degree of handedness with episodic memory retrieval. The current study takes a step ahead by examining whether handedness and working memory independently predict episodic memory. In agreement with past studies, there was an inconsistent-handed advantage for episodic memory; however, this advantage was absent for working memory tasks. Furthermore, regression analyses showed handedness, and complex working memory predicted episodic memory performance at different times. Results are discussed in light of theories of episodic memory and hemispheric interaction.

Improved detection of incipient anomalies via multivariate memory monitoring charts: Application to an air flow heating system

KAUST Repository

Harrou, Fouzi

2016-08-11

Detecting anomalies is important for reliable operation of several engineering systems. Multivariate statistical monitoring charts are an efficient tool for checking the quality of a process by identifying abnormalities. Principal component analysis (PCA) was shown effective in monitoring processes with highly correlated data. Traditional PCA-based methods, nevertheless, often are relatively inefficient at detecting incipient anomalies. Here, we propose a statistical approach that exploits the advantages of PCA and those of multivariate memory monitoring schemes, like the multivariate cumulative sum (MCUSUM) and multivariate exponentially weighted moving average (MEWMA) monitoring schemes to better detect incipient anomalies. Memory monitoring charts are sensitive to incipient anomalies in process mean, which significantly improve the performance of PCA method and enlarge its profitability, and to utilize these improvements in various applications. The performance of PCA-based MEWMA and MCUSUM control techniques are demonstrated and compared with traditional PCA-based monitoring methods. Using practical data gathered from a heating air-flow system, we demonstrate the greater sensitivity and efficiency of the developed method over the traditional PCA-based methods. Results indicate that the proposed techniques have potential for detecting incipient anomalies in multivariate data. © 2016 Elsevier Ltd

Memory Dysfunction

Science.gov (United States)

Matthews, Brandy R.

2015-01-01

Purpose of Review: This article highlights the dissociable human memory systems of episodic, semantic, and procedural memory in the context of neurologic illnesses known to adversely affect specific neuroanatomic structures relevant to each memory system. Recent Findings: Advances in functional neuroimaging and refinement of neuropsychological and bedside assessment tools continue to support a model of multiple memory systems that are distinct yet complementary and to support the potential for one system to be engaged as a compensatory strategy when a counterpart system fails. Summary: Episodic memory, the ability to recall personal episodes, is the subtype of memory most often perceived as dysfunctional by patients and informants. Medial temporal lobe structures, especially the hippocampal formation and associated cortical and subcortical structures, are most often associated with episodic memory loss. Episodic memory dysfunction may present acutely, as in concussion; transiently, as in transient global amnesia (TGA); subacutely, as in thiamine deficiency; or chronically, as in Alzheimer disease. Semantic memory refers to acquired knowledge about the world. Anterior and inferior temporal lobe structures are most often associated with semantic memory loss. The semantic variant of primary progressive aphasia (svPPA) is the paradigmatic disorder resulting in predominant semantic memory dysfunction. Working memory, associated with frontal lobe function, is the active maintenance of information in the mind that can be potentially manipulated to complete goal-directed tasks. Procedural memory, the ability to learn skills that become automatic, involves the basal ganglia, cerebellum, and supplementary motor cortex. Parkinson disease and related disorders result in procedural memory deficits. Most memory concerns warrant bedside cognitive or neuropsychological evaluation and neuroimaging to assess for specific neuropathologies and guide treatment. PMID:26039844

Behavioural memory reconsolidation of food and fear memories.

Science.gov (United States)

Flavell, Charlotte R; Barber, David J; Lee, Jonathan L C

2011-10-18

The reactivation of a memory through retrieval can render it subject to disruption or modification through the process of memory reconsolidation. In both humans and rodents, briefly reactivating a fear memory results in effective erasure by subsequent extinction training. Here we show that a similar strategy is equally effective in the disruption of appetitive pavlovian cue-food memories. However, systemic administration of the NMDA receptor partial agonist D-cycloserine, under the same behavioural conditions, did not potentiate appetitive memory extinction, suggesting that reactivation does not enhance subsequent extinction learning. To confirm that reactivation followed by extinction reflects a behavioural analogue of memory reconsolidation, we show that prevention of contextual fear memory reactivation by the L-type voltage-gated calcium channel blocker nimodipine interferes with the amnestic outcome. Therefore, the reconsolidation process can be manipulated behaviourally to disrupt both aversive and appetitive memories. © 2011 Macmillan Publishers Limited. All rights reserved.

CMOS technology: a critical enabler for free-form electronics-based killer applications

KAUST Repository

Hussain, Muhammad Mustafa

2016-05-17

Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today their focus has been on rigid and bulky thin film based materials. Their applications have been limited to computation, communication, display and vehicular electronics. With the upcoming surge of Internet of Everything, we have critical opportunity to expand the world of electronics by bridging between CMOS technology and free form electronics which can be used as wearable, implantable and embedded form. The asymmetry of shape and softness of surface (skins) in natural living objects including human, other species, plants make them incompatible with the presently available uniformly shaped and rigidly structured today’s CMOS electronics. But if we can break this barrier then we can use the physically free form electronics for applications like plant monitoring for expansion of agricultural productivity and quality, we can find monitoring and treatment focused consumer healthcare electronics – and many more creative applications. In our view, the fundamental challenge is to engage the mass users to materialize their creative ideas. Present form of electronics are too complex to understand, to work with and to use. By deploying game changing additive manufacturing, low-cost raw materials, transfer printing along with CMOS technology, we can potentially stick high quality CMOS electronics on any existing objects and embed such electronics into any future objects that will be made. The end goal is to make them smart to augment the quality of our life. We use a particular example on implantable electronics (brain machine interface) and its integration strategy enabled by CMOS device design and technology run path. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is

Static Memory Deduplication for Performance Optimization in Cloud Computing

Directory of Open Access Journals (Sweden)

Gangyong Jia

2017-04-01

Full Text Available In a cloud computing environment, the number of virtual machines (VMs on a single physical server and the number of applications running on each VM are continuously growing. This has led to an enormous increase in the demand of memory capacity and subsequent increase in the energy consumption in the cloud. Lack of enough memory has become a major bottleneck for scalability and performance of virtualization interfaces in cloud computing. To address this problem, memory deduplication techniques which reduce memory demand through page sharing are being adopted. However, such techniques suffer from overheads in terms of number of online comparisons required for the memory deduplication. In this paper, we propose a static memory deduplication (SMD technique which can reduce memory capacity requirement and provide performance optimization in cloud computing. The main innovation of SMD is that the process of page detection is performed offline, thus potentially reducing the performance cost, especially in terms of response time. In SMD, page comparisons are restricted to the code segment, which has the highest shared content. Our experimental results show that SMD efficiently reduces memory capacity requirement and improves performance. We demonstrate that, compared to other approaches, the cost in terms of the response time is negligible.

Static Memory Deduplication for Performance Optimization in Cloud Computing.

Science.gov (United States)

Jia, Gangyong; Han, Guangjie; Wang, Hao; Yang, Xuan

2017-04-27

In a cloud computing environment, the number of virtual machines (VMs) on a single physical server and the number of applications running on each VM are continuously growing. This has led to an enormous increase in the demand of memory capacity and subsequent increase in the energy consumption in the cloud. Lack of enough memory has become a major bottleneck for scalability and performance of virtualization interfaces in cloud computing. To address this problem, memory deduplication techniques which reduce memory demand through page sharing are being adopted. However, such techniques suffer from overheads in terms of number of online comparisons required for the memory deduplication. In this paper, we propose a static memory deduplication (SMD) technique which can reduce memory capacity requirement and provide performance optimization in cloud computing. The main innovation of SMD is that the process of page detection is performed offline, thus potentially reducing the performance cost, especially in terms of response time. In SMD, page comparisons are restricted to the code segment, which has the highest shared content. Our experimental results show that SMD efficiently reduces memory capacity requirement and improves performance. We demonstrate that, compared to other approaches, the cost in terms of the response time is negligible.

The AIP Model of EMDR Therapy and Pathogenic Memories

Directory of Open Access Journals (Sweden)

Michael Hase

2017-09-01

Full Text Available Eye Movement Desensitization and Reprocessing (EMDR therapy has been widely recognized as an efficacious treatment for post-traumatic stress disorder (PTSD. In the last years more insight has been gained regarding the efficacy of EMDR therapy in a broad field of mental disorders beyond PTSD. The cornerstone of EMDR therapy is its unique model of pathogenesis and change: the adaptive information processing (AIP model. The AIP model developed by F. Shapiro has found support and differentiation in recent studies on the importance of memories in the pathogenesis of a range of mental disorders beside PTSD. However, theoretical publications or research on the application of the AIP model are still rare. The increasing acceptance of ideas that relate the origin of many mental disorders to the formation and consolidation of implicit dysfunctional memory lead to formation of the theory of pathogenic memories. Within the theory of pathogenic memories these implicit dysfunctional memories are considered to form basis of a variety of mental disorders. The theory of pathogenic memories seems compatible to the AIP model of EMDR therapy, which offers strategies to effectively access and transmute these memories leading to amelioration or resolution of symptoms. Merging the AIP model with the theory of pathogenic memories may initiate research. In consequence, patients suffering from such memory-based disorders may be earlier diagnosed and treated more effectively.

Reconfigurable photonic crystals enabled by pressure-responsive shape-memory polymers

Science.gov (United States)

Fang, Yin; Ni, Yongliang; Leo, Sin-Yen; Taylor, Curtis; Basile, Vito; Jiang, Peng

2015-01-01

Smart shape-memory polymers can memorize and recover their permanent shape in response to an external stimulus (for example, heat). They have been extensively exploited for a wide spectrum of applications ranging from biomedical devices to aerospace morphing structures. However, most of the existing shape-memory polymers are thermoresponsive and their performance is hindered by heat-demanding programming and recovery steps. Although pressure is an easily adjustable process variable such as temperature, pressure-responsive shape-memory polymers are largely unexplored. Here we report a series of shape-memory polymers that enable unusual ‘cold' programming and instantaneous shape recovery triggered by applying a contact pressure at ambient conditions. Moreover, the interdisciplinary integration of scientific principles drawn from two disparate fields—the fast-growing photonic crystal and shape-memory polymer technologies—enables fabrication of reconfigurable photonic crystals and simultaneously provides a simple and sensitive optical technique for investigating the intriguing shape-memory effects at nanoscale. PMID:26074349

Flash memories economic principles of performance, cost and reliability optimization

CERN Document Server

Richter, Detlev

2014-01-01

The subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined.   Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based pr...

Applications of Case Based Organizational Memory Supported by the PAbMM Architecture

Directory of Open Access Journals (Sweden)

Martín

2017-04-01

Full Text Available In the aim to manage and retrieve the organizational knowledge, in the last years numerous proposals of models and tools for knowledge management and knowledge representation have arisen. However, most of them store knowledge in a non-structured or semi-structured way, hindering the semantic and automatic processing of this knowledge. In this paper we present a more detailed case-based organizational memory ontology, which aims at contributing to the design of an organizational memory based on cases, so that it can be used to learn, reasoning, solve problems, and as support to better decision making as well. The objective of this Organizational Memory is to serve as base for the organizational knowledge exchange in a processing architecture specialized in the measurement and evaluation. In this way, our processing architecture is based on the C-INCAMI framework (Context-Information Need, Concept model, Attribute, Metric and Indicator for defining the measurement projects. Additionally, the proposal architecture uses a big data repository to make available the data for consumption and to manage the Organizational Memory, which allows a feedback mechanism in relation with online processing. In order to illustrate its utility, two practical cases are explained: A pasture predictor system, using the data of the weather radar (WR of the Experimental Agricultural Station (EAS INTA Anguil (La Pampa State, Argentina and an outpatient monitoring scenario. Future trends and concluding remarks are extended.

Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

International Nuclear Information System (INIS)

Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

2007-01-01

The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

Demystifying the memory effect: A geometrical approach to understanding speckle correlations

Science.gov (United States)

Prunty, Aaron C.; Snieder, Roel K.

2017-05-01

The memory effect has seen a surge of research into its fundamental properties and applications since its discovery by Feng et al. [Phys. Rev. Lett. 61, 834 (1988)]. While the wave trajectories for which the memory effect holds are hidden implicitly in the diffusion probability function [Phys. Rev. B 40, 737 (1989)], the physical intuition of why these trajectories satisfy the memory effect has often been masked by the derivation of the memory correlation function itself. In this paper, we explicitly derive the specific trajectories through a random medium for which the memory effect holds. Our approach shows that the memory effect follows from a simple conservation argument, which imposes geometrical constraints on the random trajectories that contribute to the memory effect. We illustrate the time-domain effects of these geometrical constraints with numerical simulations of pulse transmission through a random medium. The results of our derivation and numerical simulations are consistent with established theory and experimentation.

Memory reconsolidation mediates the updating of hippocampal memory content

OpenAIRE

Jonathan L C Lee

2010-01-01

The retrieval or reactivation of a memory places it into a labile state, requiring a process of reconsolidation to restabilize it. This retrieval-induced plasticity is a potential mechanism for the modification of the existing memory. Following previous data supportive of a functional role for memory reconsolidation in the modification of memory strength, here I show that hippocampal memory reconsolidation also supports the updating of contextual memory content. Using a procedure that se...

Objective-C memory management essentials

CERN Document Server

Tang, Gibson

2015-01-01

If you are new to Objective-C or a veteran in iOS application development, this is the book for you. This book will ensure that you can actively learn the methods and concepts in relation to memory management in a more engaging way. Basic knowledge of iOS development is required for this book.

Structural stability and theoretical strength of Cu crystal under equal ...

Indian Academy of Sciences (India)

Abstract. Cu has been used extensively to replace Al as interconnects in ULSI and. MEMS devices. ... affects the device manufacturing yield and ultimate reliability. ..... [16] M Cerný and J Pokluda, J. Alloys Compounds 378, 159 (2004). [17] J M ...

Organizational memory: from expectations memory to procedural memory

NARCIS (Netherlands)

Ebbers, J.J.; Wijnberg, N.M.

2009-01-01

Organizational memory is not just the stock of knowledge about how to do things, but also of expectations of organizational members vis-à-vis each other and the organization as a whole. The central argument of this paper is that this second type of organizational memory -organizational expectations

Nano-islands Based Charge Trapping Memory: A Scalability Study

KAUST Repository

Elatab, Nazek; Saadat, Irfan; Saraswat, Krishna; Nayfeh, Ammar

2017-01-01

Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.

Strategic design and fabrication of acrylic shape memory polymers

Science.gov (United States)

Park, Ju Hyuk; Kim, Hansu; Ryoun Youn, Jae; Song, Young Seok

2017-08-01

Modulation of thermomechanics nature is a critical issue for an optimized use of shape memory polymers (SMPs). In this study, a strategic approach was proposed to control the transition temperature of SMPs. Free radical vinyl polymerization was employed for tailoring and preparing acrylic SMPs. Transition temperatures of the shape memory tri-copolymers were tuned by changing the composition of monomers. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy analyses were carried out to evaluate the chemical structures and compositions of the synthesized SMPs. The thermomechanical properties and shape memory performance of the SMPs were also examined by performing dynamic mechanical thermal analysis. Numerical simulation based on a finite element method provided consistent results with experimental cyclic shape memory tests of the specimens. Transient shape recovery tests were conducted and optical transparence of the samples was identified. We envision that the materials proposed in this study can help develop a new type of shape-memory devices in biomedical and aerospace engineering applications.

Nano-islands Based Charge Trapping Memory: A Scalability Study

KAUST Repository

Elatab, Nazek

2017-10-19

Zinc-oxide (ZnO) and zirconia (ZrO2) metal oxides have been studied extensively in the past few decades with several potential applications including memory devices. In this work, a scalability study, based on the ITRS roadmap, is conducted on memory devices with ZnO and ZrO2 nano-islands charge trapping layer. Both nano-islands are deposited using atomic layer deposition (ALD), however, the different sizes, distribution and properties of the materials result in different memory performance. The results show that at the 32-nm node charge trapping memory with 127 ZrO2 nano-islands can provide a 9.4 V memory window. However, with ZnO only 31 nano-islands can provide a window of 2.5 V. The results indicate that ZrO2 nano-islands are more promising than ZnO in scaled down devices due to their higher density, higher-k, and absence of quantum confinement effects.

Will silicon be the photonic material of the third millenium?

International Nuclear Information System (INIS)

Pavesi, L

2003-01-01

Silicon microphotonics, a technology which merges photonics and silicon microelectronic components, is rapidly evolving. Many different fields of application are emerging: transceiver modules for optical communication systems, optical bus systems for ULSI circuits, I/O stages for SOC, displays, .... In this review I will give a brief motivation for silicon microphotonics and try to give the state-of-the-art of this technology. The ingredient still lacking is the silicon laser: a review of the various approaches will be presented. Finally, I will try to draw some conclusions where silicon is predicted to be the material to achieve a full integration of electronic and optical devices. (topical review)

Aging Memories: Differential Decay of Episodic Memory Components

Science.gov (United States)

Talamini, Lucia M.; Gorree, Eva

2012-01-01

Some memories about events can persist for decades, even a lifetime. However, recent memories incorporate rich sensory information, including knowledge on the spatial and temporal ordering of event features, while old memories typically lack this "filmic" quality. We suggest that this apparent change in the nature of memories may reflect a…

Working memory, long-term memory, and medial temporal lobe function

Science.gov (United States)

Jeneson, Annette; Squire, Larry R.

2012-01-01

Early studies of memory-impaired patients with medial temporal lobe (MTL) damage led to the view that the hippocampus and related MTL structures are involved in the formation of long-term memory and that immediate memory and working memory are independent of these structures. This traditional idea has recently been revisited. Impaired performance in patients with MTL lesions on tasks with short retention intervals, or no retention interval, and neuroimaging findings with similar tasks have been interpreted to mean that the MTL is sometimes needed for working memory and possibly even for visual perception itself. We present a reappraisal of this interpretation. Our main conclusion is that, if the material to be learned exceeds working memory capacity, if the material is difficult to rehearse, or if attention is diverted, performance depends on long-term memory even when the retention interval is brief. This fundamental notion is better captured by the terms subspan memory and supraspan memory than by the terms short-term memory and long-term memory. We propose methods for determining when performance on short-delay tasks must depend on long-term (supraspan) memory and suggest that MTL lesions impair performance only when immediate memory and working memory are insufficient to support performance. In neuroimaging studies, MTL activity during encoding is influenced by the memory load and correlates positively with long-term retention of the material that was presented. The most parsimonious and consistent interpretation of all the data is that subspan memoranda are supported by immediate memory and working memory and are independent of the MTL. PMID:22180053

Single-item memory, associative memory, and the human hippocampus

OpenAIRE

Gold, Jeffrey J.; Hopkins, Ramona O.; Squire, Larry R.

2006-01-01

We tested recognition memory for items and associations in memory-impaired patients with bilateral lesions thought to be limited to the hippocampal region. In Experiment 1 (Combined memory test), participants studied words and then took a memory test in which studied words, new words, studied word pairs, and recombined word pairs were presented in a mixed order. In Experiment 2 (Separated memory test), participants studied single words and then took a memory test involving studied word and ne...

Reconceptualizing Working Memory in Educational Research

Science.gov (United States)

Fenesi, Barbara; Sana, Faria; Kim, Joseph A.; Shore, David I.

2015-01-01

In recent years, research from cognitive science has provided a solid theoretical framework to develop evidence-based interventions in education. In particular, research into reading, writing, language, mathematics and multimedia learning has been guided by the application of Baddeley's multicomponent model of working memory. However, an…

Biocompatibility and corrosion behavior of the shape memory NiTi alloy in the physiological environments simulated with body fluids for medical applications

International Nuclear Information System (INIS)

Khalil-Allafi, Jafar; Amin-Ahmadi, Behnam; Zare, Mehrnoush

2010-01-01

Due to unique properties of NiTi shape memory alloys such as high corrosion resistance, biocompatibility, super elasticity and shape memory behavior, NiTi shape memory alloys are suitable materials for medical applications. Although TiO 2 passive layer in these alloys can prevent releasing of nickel to the environment, high nickel content and stability of passive layer in these alloys are very debatable subjects. In this study a NiTi shape memory alloy with nominal composition of 50.7 atom% Ni was investigated by corrosion tests. Electrochemical tests were performed in two physiological environments of Ringer solution and NaCl 0.9% solution. Results indicate that the breakdown potential of the NiTi alloy in NaCl 0.9% solution is higher than that in Ringer solution. The results of Scanning Electron Microscope (SEM) reveal that low pitting corrosion occurred in Ringer solution compared with NaCl solution at potentiostatic tests. The pH value of the solutions increases after the electrochemical tests. The existence of hydride products in the X-ray diffraction analysis confirms the decrease of the concentration of hydrogen ion in solutions. Topographical evaluations show that corrosion products are nearly same in all samples. The biocompatibility tests were performed by reaction of mouse fibroblast cells (L929). The growth and development of cells for different times were measured by numbering the cells or statistics investigations. The figures of cells for different times showed natural growth of cells. The different of the cell numbers between the test specimen and control specimen was negligible; therefore it may be concluded that the NiTi shape memory alloy is not toxic in the physiological environments simulated with body fluids.

Design of shape memory alloy (SMA) actuators

CERN Document Server

Rao, Ashwin; Reddy, J N

2015-01-01

This short monograph presents an analysis and design methodology for shape memory alloy (SMA) components such as wires, beams, and springs for different applications. The solid-solid, diffusionless phase transformations in thermally responsive SMA allows them to demonstrate unique characteristics like superelasticity and shape memory effects. The combined sensing and actuating capabilities of such materials allows them to provide a system level response by combining multiple functions in a single material system. In SMA, the combined mechanical and thermal loading effects influence the functionality of such materials. The aim of this book is to make the analysis of these materials accessible to designers by developing a "strength of materials" approach to the analysis and design of such SMA components inspired from their various applications with a review of various factors influencing the design process for such materials.

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

Science.gov (United States)

Simanjuntak, Firman Mangasa; Panda, Debashis; Wei, Kung-Hwa; Tseng, Tseung-Yuen

2016-08-01

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges.

Memory systems interaction in the pigeon: working and reference memory.

Science.gov (United States)

Roberts, William A; Strang, Caroline; Macpherson, Krista

2015-04-01

Pigeons' performance on a working memory task, symbolic delayed matching-to-sample, was used to examine the interaction between working memory and reference memory. Reference memory was established by training pigeons to discriminate between the comparison cues used in delayed matching as S+ and S- stimuli. Delayed matching retention tests then measured accuracy when working and reference memory were congruent and incongruent. In 4 experiments, it was shown that the interaction between working and reference memory is reciprocal: Strengthening either type of memory leads to a decrease in the influence of the other type of memory. A process dissociation procedure analysis of the data from Experiment 4 showed independence of working and reference memory, and a model of working memory and reference memory interaction was shown to predict the findings reported in the 4 experiments. (PsycINFO Database Record (c) 2015 APA, all rights reserved).

Declarative memory.

Science.gov (United States)

Riedel, Wim J; Blokland, Arjan

2015-01-01

Declarative Memory consists of memory for events (episodic memory) and facts (semantic memory). Methods to test declarative memory are key in investigating effects of potential cognition-enhancing substances--medicinal drugs or nutrients. A number of cognitive performance tests assessing declarative episodic memory tapping verbal learning, logical memory, pattern recognition memory, and paired associates learning are described. These tests have been used as outcome variables in 34 studies in humans that have been described in the literature in the past 10 years. Also, the use of episodic tests in animal research is discussed also in relation to the drug effects in these tasks. The results show that nutritional supplementation of polyunsaturated fatty acids has been investigated most abundantly and, in a number of cases, but not all, show indications of positive effects on declarative memory, more so in elderly than in young subjects. Studies investigating effects of registered anti-Alzheimer drugs, cholinesterase inhibitors in mild cognitive impairment, show positive and negative effects on declarative memory. Studies mainly carried out in healthy volunteers investigating the effects of acute dopamine stimulation indicate enhanced memory consolidation as manifested specifically by better delayed recall, especially at time points long after learning and more so when drug is administered after learning and if word lists are longer. The animal studies reveal a different picture with respect to the effects of different drugs on memory performance. This suggests that at least for episodic memory tasks, the translational value is rather poor. For the human studies, detailed parameters of the compositions of word lists for declarative memory tests are discussed and it is concluded that tailored adaptations of tests to fit the hypothesis under study, rather than "off-the-shelf" use of existing tests, are recommended.

False memories in highly superior autobiographical memory individuals

Science.gov (United States)

Patihis, Lawrence; Frenda, Steven J.; LePort, Aurora K. R.; Petersen, Nicole; Nichols, Rebecca M.; Stark, Craig E. L.; McGaugh, James L.; Loftus, Elizabeth F.

2013-01-01

The recent identification of highly superior autobiographical memory (HSAM) raised the possibility that there may be individuals who are immune to memory distortions. We measured HSAM participants’ and age- and sex-matched controls’ susceptibility to false memories using several research paradigms. HSAM participants and controls were both susceptible to false recognition of nonpresented critical lure words in an associative word-list task. In a misinformation task, HSAM participants showed higher overall false memory compared with that of controls for details in a photographic slideshow. HSAM participants were equally as likely as controls to mistakenly report they had seen nonexistent footage of a plane crash. Finding false memories in a superior-memory group suggests that malleable reconstructive mechanisms may be fundamental to episodic remembering. Paradoxically, HSAM individuals may retrieve abundant and accurate autobiographical memories using fallible reconstructive processes. PMID:24248358

False memories and memory confidence in borderline patients.

Science.gov (United States)

Schilling, Lisa; Wingenfeld, Katja; Spitzer, Carsten; Nagel, Matthias; Moritz, Steffen

2013-12-01

Mixed results have been obtained regarding memory in patients with borderline personality disorder (BPD). Prior reports and anecdotal evidence suggests that patients with BPD are prone to false memories but this assumption has to been put to firm empirical test, yet. Memory accuracy and confidence was assessed in 20 BPD patients and 22 healthy controls using a visual variant of the false memory (Deese-Roediger-McDermott) paradigm which involved a negative and a positive-valenced picture. Groups did not differ regarding veridical item recognition. Importantly, patients did not display more false memories than controls. At trend level, borderline patients rated more items as new with high confidence compared to healthy controls. The results tentatively suggest that borderline patients show uncompromised visual memory functions and display no increased susceptibility for distorted memories. Copyright © 2013 Elsevier Ltd. All rights reserved.

Operation mode switchable charge-trap memory based on few-layer MoS2

Science.gov (United States)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

A direct metal transfer method for cross-bar type polymer non-volatile memory applications

International Nuclear Information System (INIS)

Kim, Tae-Wook; Lee, Kyeongmi; Oh, Seung-Hwan; Wang, Gunuk; Kim, Dong-Yu; Jung, Gun-Young; Lee, Takhee

2008-01-01

Polymer non-volatile memory devices in 8 x 8 array cross-bar architecture were fabricated by a non-aqueous direct metal transfer (DMT) method using a two-step thermal treatment. Top electrodes with a linewidth of 2 μm were transferred onto the polymer layer by the DMT method. The switching behaviour of memory devices fabricated by the DMT method was very similar to that of devices fabricated by the conventional shadow mask method. The devices fabricated using the DMT method showed three orders of magnitude of on/off ratio with stable resistance switching, demonstrating that the DMT method can be a simple process to fabricate organic memory array devices

The accessibility of memory items in children’s working memory

OpenAIRE

Roome, Hannah; Towse, John

2016-01-01

This thesis investigates the processes and systems that support recall in working memory. In particular it seeks to apply ideas from the adult-based dual-memory framework (Unsworth & Engle, 2007b) that claims primary memory and secondary memory are independent contributors to working memory capacity. These two memory systems are described as domain-general processes that combine control of attention and basic memory abilities to retain information. The empirical contribution comprises five ex...

Active counter electrode in a-SiC electrochemical metallization memory

Science.gov (United States)

Morgan, K. A.; Fan, J.; Huang, R.; Zhong, L.; Gowers, R.; Ou, J. Y.; Jiang, L.; De Groot, C. H.

2017-08-01

Cu/amorphous-SiC (a-SiC) electrochemical metallization memory cells have been fabricated with two different counter electrode (CE) materials, W and Au, in order to investigate the role of CEs in a non-oxide semiconductor switching matrix. In a positive bipolar regime with Cu filaments forming and rupturing, the CE influences the OFF state resistance and minimum current compliance. Nevertheless, a similarity in SET kinetics is seen for both CEs, which differs from previously published SiO2 memories, confirming that CE effects are dependent on the switching layer material or type. Both a-SiC memories are able to switch in the negative bipolar regime, indicating Au and W filaments. This confirms that CEs can play an active role in a non-oxide semiconducting switching matrix, such as a-SiC. By comparing both Au and W CEs, this work shows that W is superior in terms of a higher R OFF/R ON ratio, along with the ability to switch at lower current compliances making it a favourable material for future low energy applications. With its CMOS compatibility, a-SiC/W is an excellent choice for future resistive memory applications.

Stochastic memory: getting memory out of noise

Science.gov (United States)

Stotland, Alexander; di Ventra, Massimiliano

2011-03-01

Memory circuit elements, namely memristors, memcapacitors and meminductors, can store information without the need of a power source. These systems are generally defined in terms of deterministic equations of motion for the state variables that are responsible for memory. However, in real systems noise sources can never be eliminated completely. One would then expect noise to be detrimental for memory. Here, we show that under specific conditions on the noise intensity memory can actually be enhanced. We illustrate this phenomenon using a physical model of a memristor in which the addition of white noise into the state variable equation improves the memory and helps the operation of the system. We discuss under which conditions this effect can be realized experimentally, discuss its implications on existing memory systems discussed in the literature, and also analyze the effects of colored noise. Work supported in part by NSF.

Improved charge trapping properties by embedded graphene oxide quantum-dots for flash memory application

Science.gov (United States)

Jia, Xinlei; Yan, Xiaobing; Wang, Hong; Yang, Tao; Zhou, Zhenyu; Zhao, Jianhui

2018-06-01

In this work, we have investigated two kinds of charge trapping memory devices with Pd/Al2O3/ZnO/SiO2/p-Si and Pd/Al2O3/ZnO/graphene oxide quantum-dots (GOQDs)/ZnO/SiO2/p-Si structure. Compared with the single ZnO sample, the memory window of the ZnO-GOQDs-ZnO sample reaches a larger value (more than doubled) of 2.7 V under the sweeping gate voltage ± 7 V, indicating a better charge storage capability and the significant charge trapping effects by embedding the GOQDs trapping layer. The ZnO-GOQDs-ZnO devices have better date retention properties with the high and low capacitances loss of ˜ 1.1 and ˜ 6.9%, respectively, as well as planar density of the trapped charges of 1.48 × 1012 cm- 2. It is proposed that the GOQDs play an important role in the outstanding memory characteristics due to the deep quantum potential wells and the discrete distribution of the GOQDs. The long date retention time might have resulted from the high potential barrier which suppressed both the back tunneling and the leakage current. Intercalating GOQDs in the memory device is a promising method to realize large memory window, low-power consumption and excellent retention properties.

Electrostatic Switching in Vertically Oriented Nanotubes for Nonvolatile Memory Applications

Science.gov (United States)

Kaul, Anupama B.; Khan, Paul; Jennings, Andrew T.; Greer, Julia R.; Megerian, Krikor G.; Allmen, Paul von

2009-01-01

We have demonstrated electrostatic switching in vertically oriented nanotubes or nanofibers, where a nanoprobe was used as the actuating electrode inside an SEM. When the nanoprobe was manipulated to be in close proximity to a single tube, switching voltages between 10 V - 40 V were observed, depending on the geometrical parameters. The turn-on transitions appeared to be much sharper than the turn-off transitions which were limited by the tube-to-probe contact resistances. In many cases, stiction forces at these dimensions were dominant, since the tube appeared stuck to the probe even after the voltage returned to 0 V, suggesting that such structures are promising for nonvolatile memory applications. The stiction effects, to some extent, can be adjusted by engineering the switch geometry appropriately. Nanoscale mechanical measurements were also conducted on the tubes using a custom-built anoindentor inside an SEM, from which preliminary material parameters, such as the elastic modulus, were extracted. The mechanical measurements also revealed that the tubes appear to be well adhered to the substrate. The material parameters gathered from the mechanical measurements were then used in developing an electrostatic model of the switch using a commercially available finite-element simulator. The calculated pull-in voltages appeared to be in agreement to the experimentally obtained switching voltages to first order.

Applications of Singh-Rajput Mes in Recall Operations of Quantum Associative Memory for a Two- Qubit System

Science.gov (United States)

Singh, Manu Pratap; Rajput, B. S.

2016-03-01

Recall operations of quantum associative memory (QuAM) have been conducted separately through evolutionary as well as non-evolutionary processes in terms of unitary and non- unitary operators respectively by separately choosing our recently derived maximally entangled states (Singh-Rajput MES) and Bell's MES as memory states for various queries and it has been shown that in each case the choices of Singh-Rajput MES as valid memory states are much more suitable than those of Bell's MES. it has been demonstrated that in both the types of recall processes the first and the fourth states of Singh-Rajput MES are most suitable choices as memory states for the queries `11' and `00' respectively while none of the Bell's MES is a suitable choice as valid memory state in these recall processes. It has been demonstrated that all the four states of Singh-Rajput MES are suitable choice as valid memory states for the queries `1?', `?1', `?0' and `0?' while none of the Bell's MES is suitable choice as the valid memory state for these queries also.

Ti-Ni-based shape memory alloys as smart materials

International Nuclear Information System (INIS)

Otsuka, K.; Xu, Y.; Ren, X.

2003-01-01

Smart materials consist of three principal materials, ferroelectrics, shape memory alloys (SMA) and electro-active polymers (EAP). Among these SMAs, especially Ti-Ni-based alloys are important, since only they can provide large recoverable strains and high recovery stress. In the present paper the unique characteristics of Ti-Ni-based shape memory alloys are reviewed on an up-to-date basis with the aim of their applications to smart materials and structures. (orig.)

Camera memory study for large space telescope. [charge coupled devices

Science.gov (United States)

Hoffman, C. P.; Brewer, J. E.; Brager, E. A.; Farnsworth, D. L.

1975-01-01

Specifications were developed for a memory system to be used as the storage media for camera detectors on the large space telescope (LST) satellite. Detectors with limited internal storage time such as intensities charge coupled devices and silicon intensified targets are implied. The general characteristics are reported of different approaches to the memory system with comparisons made within the guidelines set forth for the LST application. Priority ordering of comparisons is on the basis of cost, reliability, power, and physical characteristics. Specific rationales are provided for the rejection of unsuitable memory technologies. A recommended technology was selected and used to establish specifications for a breadboard memory. Procurement scheduling is provided for delivery of system breadboards in 1976, prototypes in 1978, and space qualified units in 1980.

Implementation of a finite element analysis procedure for structural analysis of shape memory behaviour of fibre reinforced shape memory polymer composites

Science.gov (United States)

Azzawi, Wessam Al; Epaarachchi, J. A.; Islam, Mainul; Leng, Jinsong

2017-12-01

Shape memory polymers (SMPs) offer a unique ability to undergo a substantial shape deformation and subsequently recover the original shape when exposed to a particular external stimulus. Comparatively low mechanical properties being the major drawback for extended use of SMPs in engineering applications. However the inclusion of reinforcing fibres in to SMPs improves mechanical properties significantly while retaining intrinsic shape memory effects. The implementation of shape memory polymer composites (SMPCs) in any engineering application is a unique task which requires profound materials and design optimization. However currently available analytical tools have critical limitations to undertake accurate analysis/simulations of SMPC structures and slower derestrict transformation of breakthrough research outcomes to real-life applications. Many finite element (FE) models have been presented. But majority of them require a complicated user-subroutines to integrate with standard FE software packages. Furthermore, those subroutines are problem specific and difficult to use for a wider range of SMPC materials and related structures. This paper presents a FE simulation technique to model the thermomechanical behaviour of the SMPCs using commercial FE software ABAQUS. Proposed technique incorporates material time-dependent viscoelastic behaviour. The ability of the proposed technique to predict the shape fixity and shape recovery was evaluated by experimental data acquired by a bending of a SMPC cantilever beam. The excellent correlation between the experimental and FE simulation results has confirmed the robustness of the proposed technique.

Memory retrieval and the passage of time: from reconsolidation and strengthening to extinction.

Science.gov (United States)

Inda, Maria Carmen; Muravieva, Elizaveta V; Alberini, Cristina M

2011-02-02

An established memory can be made transiently labile if retrieved or reactivated. Over time, it becomes again resistant to disruption and this process that renders the memory stable is termed reconsolidation. The reasons why a memory becomes labile after retrieval and reconsolidates still remains debated. Here, using inhibitory avoidance learning in rats, we provide evidence that retrievals of a young memory, which are accompanied by its reconsolidation, result in memory strengthening and contribute to its overall consolidation. This function associated to reconsolidation is temporally limited. With the passage of time, the stored memory undergoes important changes, as revealed by the behavioral outcomes of its retrieval. Over time, without explicit retrievals, memory first strengthens and becomes refractory to both retrieval-dependent interference and strengthening. At later times, the same retrievals that lead to reconsolidation of a young memory extinguish an older memory. We conclude that the storage of information is very dynamic and that its temporal evolution regulates behavioral outcomes. These results are important for potential clinical applications.

Frequency-specific insight into short-term memory capacity.

Science.gov (United States)

Feurra, Matteo; Galli, Giulia; Pavone, Enea Francesco; Rossi, Alessandro; Rossi, Simone

2016-07-01

The digit span is one of the most widely used memory tests in clinical and experimental neuropsychology for reliably measuring short-term memory capacity. In the forward version, sequences of digits of increasing length have to be reproduced in the order in which they are presented, whereas in the backward version items must be reproduced in the reversed order. Here, we assessed whether transcranial alternating current stimulation (tACS) increases the memory span for digits of young and midlife adults. Imperceptibly weak electrical currents in the alpha (10 Hz), beta (20 Hz), theta (5 Hz), and gamma (40 Hz) range, as well as a sham stimulation, were delivered over the left posterior parietal cortex, a cortical region thought to sustain maintenance processes in short-term memory through oscillatory brain activity in the beta range. We showed a frequency-specific effect of beta-tACS that robustly increased the forward memory span of young, but not middle-aged, healthy individuals. The effect correlated with age: the younger the subjects, the greater the benefit arising from parietal beta stimulation. Our results provide evidence of a short-term memory capacity improvement in young adults by online frequency-specific tACS application. Copyright © 2016 the American Physiological Society.

Magnetic shape memory behaviour

International Nuclear Information System (INIS)

Brown, P.J.; Gandy, A.P.; Ishida, K.; Kainuma, R.; Kanomata, T.; Matsumoto, M.; Morito, H.; Neumann, K.-U.; Oikawa, K.; Ouladdiaf, B.; Ziebeck, K.R.A.

2007-01-01

Materials that can be transformed at one temperature T F , then cooled to a lower temperature T M and plastically deformed and on heating to T F regain their original shape are currently receiving considerable attention. In recovering their shape the alloys can produce a displacement or a force, or a combination of the two. Such behaviour is known as the shape memory effect and usually takes place by change of temperature or applied stress. For many applications the transformation is not sufficiently rapid or a change in temperature/pressure not appropriate. As a result, considerable effort is being made to find a ferromagnetic system in which the effect can be controlled by an applied magnetic field. The results of recent experiments on ferromagnetic shape memory compounds aimed at understanding the underlying mechanism will be reviewed

Associative Memory Computing Power and Its Simulation

CERN Document Server

Volpi, G; The ATLAS collaboration

2014-01-01

The associative memory (AM) system is a computing device made of hundreds of AM ASICs chips designed to perform “pattern matching” at very high speed. Since each AM chip stores a data base of 130000 pre-calculated patterns and large numbers of chips can be easily assembled together, it is possible to produce huge AM banks. Speed and size of the system are crucial for real-time High Energy Physics applications, such as the ATLAS Fast TracKer (FTK) Processor. Using 80 million channels of the ATLAS tracker, FTK finds tracks within 100 micro seconds. The simulation of such a parallelized system is an extremely complex task if executed in commercial computers based on normal CPUs. The algorithm performance is limited, due to the lack of parallelism, and in addition the memory requirement is very large. In fact the AM chip uses a content addressable memory (CAM) architecture. Any data inquiry is broadcast to all memory elements simultaneously, thus data retrieval time is independent of the database size. The gr...

Associative Memory computing power and its simulation

CERN Document Server

Ancu, L S; The ATLAS collaboration; Britzger, D; Giannetti, P; Howarth, J W; Luongo, C; Pandini, C; Schmitt, S; Volpi, G

2014-01-01

The associative memory (AM) system is a computing device made of hundreds of AM ASICs chips designed to perform “pattern matching” at very high speed. Since each AM chip stores a data base of 130000 pre-calculated patterns and large numbers of chips can be easily assembled together, it is possible to produce huge AM banks. Speed and size of the system are crucial for real-time High Energy Physics applications, such as the ATLAS Fast TracKer (FTK) Processor. Using 80 million channels of the ATLAS tracker, FTK finds tracks within 100 micro seconds. The simulation of such a parallelized system is an extremely complex task if executed in commercial computers based on normal CPUs. The algorithm performance is limited, due to the lack of parallelism, and in addition the memory requirement is very large. In fact the AM chip uses a content addressable memory (CAM) architecture. Any data inquiry is broadcast to all memory elements simultaneously, thus data retrieval time is independent of the database size. The gr...

A model of memory impairment in schizophrenia: cognitive and clinical factors associated with memory efficiency and memory errors.

Science.gov (United States)

Brébion, Gildas; Bressan, Rodrigo A; Ohlsen, Ruth I; David, Anthony S

2013-12-01

Memory impairments in patients with schizophrenia have been associated with various cognitive and clinical factors. Hallucinations have been more specifically associated with errors stemming from source monitoring failure. We conducted a broad investigation of verbal memory and visual memory as well as source memory functioning in a sample of patients with schizophrenia. Various memory measures were tallied, and we studied their associations with processing speed, working memory span, and positive, negative, and depressive symptoms. Superficial and deep memory processes were differentially associated with processing speed, working memory span, avolition, depression, and attention disorders. Auditory/verbal and visual hallucinations were differentially associated with specific types of source memory error. We integrated all the results into a revised version of a previously published model of memory functioning in schizophrenia. The model describes the factors that affect memory efficiency, as well as the cognitive underpinnings of hallucinations within the source monitoring framework. © 2013.

Application of morphological associative memories and Fourier descriptors for classification of noisy subsurface signatures

Science.gov (United States)

Ortiz, Jorge L.; Parsiani, Hamed; Tolstoy, Leonid

2004-02-01

This paper presents a method for recognition of Noisy Subsurface Images using Morphological Associative Memories (MAM). MAM are type of associative memories that use a new kind of neural networks based in the algebra system known as semi-ring. The operations performed in this algebraic system are highly nonlinear providing additional strength when compared to other transformations. Morphological associative memories are a new kind of neural networks that provide a robust performance with noisy inputs. Two representations of morphological associative memories are used called M and W matrices. M associative memory provides a robust association with input patterns corrupted by dilative random noise, while the W associative matrix performs a robust recognition in patterns corrupted with erosive random noise. The robust performance of MAM is used in combination of the Fourier descriptors for the recognition of underground objects in Ground Penetrating Radar (GPR) images. Multiple 2-D GPR images of a site are made available by NASA-SSC center. The buried objects in these images appear in the form of hyperbolas which are the results of radar backscatter from the artifacts or objects. The Fourier descriptors of the prototype hyperbola-like and shapes from non-hyperbola shapes in the sub-surface images are used to make these shapes scale-, shift-, and rotation-invariant. Typical hyperbola-like and non-hyperbola shapes are used to calculate the morphological associative memories. The trained MAMs are used to process other noisy images to detect the presence of these underground objects. The outputs from the MAM using the noisy patterns may be equal to the training prototypes, providing a positive identification of the artifacts. The results are images with recognized hyperbolas which indicate the presence of buried artifacts. A model using MATLAB has been developed and results are presented.

A Chinese Chan-based lifestyle intervention improves memory of older adults

Directory of Open Access Journals (Sweden)

Agnes S. eChan

2014-03-01

Full Text Available This study aims to explore the potential benefits of a Chinese Chan-based lifestyle intervention on enhancing memory in older people with lower memory function. Forty-four aged 60 to 83 adults with various level of memory ability participated in the study. Their memories (including verbal and visual components were assessed before and after a 3-month intervention. The intervention consisted of 12 sessions, with one 90-minute session per week. The intervention involved components of adopting a special vegetarian diet, practicing a type of mind-body exercises and learning self-realization. Elderly with lower memory function at the baseline (i.e., their performance on standardized memory tests was within 25th percentile showed a significant memory improvement after the intervention. Their verbal and visual memory performance has showed 50% and 49% enhancement respectively. In addition, their improvement can be considered as a reliable and clinically significant change as reflected by their significant pre-post differences and reliable change indices. Such robust treatment effect was found to be specific to memory functions, but less influencing on the other cognitive functions. These preliminary encouraging results have shed some light on the potential applicability of the Chinese Chan-based lifestyle intervention as a method for enhancing memory in the elderly population.

Degrading emotional memories induced by a virtual reality paradigm.

Science.gov (United States)

Cuperus, Anne A; Laken, Maarten; van den Hout, Marcel A; Engelhard, Iris M

2016-09-01

In Eye Movement and Desensitization and Reprocessing (EMDR) therapy, a dual-task approach is used: patients make horizontal eye movements while they recall aversive memories. Studies showed that this reduces memory vividness and/or emotionality. A strong explanation is provided by working memory theory, which suggests that other taxing dual-tasks are also effective. Experiment 1 tested whether a visuospatial task which was carried out while participants were blindfolded taxes working memory. Experiment 2 tested whether this task degrades negative memories induced by a virtual reality (VR) paradigm. In experiment 1, participants responded to auditory cues with or without simultaneously carrying out the visuospatial task. In experiment 2, participants recalled negative memories induced by a VR paradigm. The experimental group simultaneously carried out the visuospatial task, and a control group merely recalled the memories. Changes in self-rated memory vividness and emotionality were measured. The slowing down of reaction times due to the visuospatial task indicated that its cognitive load was greater than the load of the eye movements task in previous studies. The task also led to reductions in emotionality (but not vividness) of memories induced by the VR paradigm. Weaknesses are that only males were tested in experiment 1, and the effectiveness of the VR fear/trauma induction was not assessed with ratings of mood or intrusions in experiment 2. The results suggest that the visuospatial task may be applicable in clinical settings, and the VR paradigm may provide a useful method of inducing negative memories. Copyright © 2016 Elsevier Ltd. All rights reserved.

Visual working memory buffers information retrieved from visual long-term memory.

Science.gov (United States)

Fukuda, Keisuke; Woodman, Geoffrey F

2017-05-16

Human memory is thought to consist of long-term storage and short-term storage mechanisms, the latter known as working memory. Although it has long been assumed that information retrieved from long-term memory is represented in working memory, we lack neural evidence for this and need neural measures that allow us to watch this retrieval into working memory unfold with high temporal resolution. Here, we show that human electrophysiology can be used to track information as it is brought back into working memory during retrieval from long-term memory. Specifically, we found that the retrieval of information from long-term memory was limited to just a few simple objects' worth of information at once, and elicited a pattern of neurophysiological activity similar to that observed when people encode new information into working memory. Our findings suggest that working memory is where information is buffered when being retrieved from long-term memory and reconcile current theories of memory retrieval with classic notions about the memory mechanisms involved.

Stress Effects on Working Memory, Explicit Memory, and Implicit Memory for Neutral and Emotional Stimuli in Healthy Men

OpenAIRE

Luethi, Mathias; Meier, Beat; Sandi, Carmen

2009-01-01

Stress is a strong modulator of memory function. However, memory is not a unitary process and stress seems to exert different effects depending on the memory type under study. Here, we explored the impact of social stress on different aspects of human memory, including tests for explicit memory and working memory (for neutral materials), as well as implicit memory (perceptual priming, contextual priming and classical conditioning for emotional stimuli). A total of 35 young adult...

Fabrication and characterization of shape memory polymers at small-scales

Science.gov (United States)

Wornyo, Edem

The objective of this research is to thoroughly investigate the shape memory effect in polymers, characterize, and optimize these polymers for applications in information storage systems. Previous research effort in this field concentrated on shape memory metals for biomedical applications such as stents. Minimal work has been done on shape memory polymers; and the available work on shape memory polymers has not characterized the behaviors of this category of polymers fully. Copolymer shape memory materials based on diethylene glycol dimethacrylate (DEGDMA) crosslinker, and tert butyl acrylate (tBA) monomer are designed. The design encompasses a careful control of the backbone chemistry of the materials. Characterization methods such as dynamic mechanical analysis (DMA), differential scanning calorimetry (DSC); and novel nanoscale techniques such as atomic force microscopy (AFM), and nanoindentation are applied to this system of materials. Designed experiments are conducted on the materials to optimize spin coating conditions for thin films. Furthermore, the recovery, a key for the use of these polymeric materials for information storage, is examined in detail with respect to temperature. In sum, the overarching objectives of the proposed research are to: (i) Design shape memory polymers based on polyethylene glycol dimethacrylate (PEGDMA) and diethylene glycol dimethacrylate (DEGDMA) crosslinkers, 2-hydroxyethyl methacrylate (HEMA) and tert-butyl acrylate monomer (tBA). (ii) Utilize dynamic mechanical analysis (DMA) to comprehend the thermomechanical properties of shape memory polymers based on DEGDMA and tBA. (iii) Utilize nanoindentation and atomic force microscopy (AFM) to understand the nanoscale behavior of these SMPs, and explore the strain storage and recovery of the polymers from a deformed state. (iv) Study spin coating conditions on thin film quality with designed experiments. (iv) Apply neural networks and genetic algorithms to optimize these systems.

A Fully Transparent Resistive Memory for Harsh Environments

KAUST Repository

Yang, Po-Kang

2015-10-12

A fully transparent resistive memory (TRRAM) based on Hafnium oxide (HfO2) with excellent transparency, resistive switching capability, and environmental stability is demonstrated. The retention time measured at 85 °C is over 3 × 104 sec, and no significant degradation is observed in 130 cycling test. Compared with ZnO TRRAM, HfO2 TRRAM shows reliable performance under harsh conditions, such as high oxygen partial pressure, high moisture (relative humidity = 90% at 85 °C), corrosive agent exposure, and proton irradiation. Moreover, HfO2 TRRAM fabricated in cross-bar array structures manifests the feasibility of future high density memory applications. These findings not only pave the way for future TRRAM design, but also demonstrate the promising applicability of HfO2 TRRAM for harsh environments.

Working memory capacity and controlled serial memory search.

Science.gov (United States)

Mızrak, Eda; Öztekin, Ilke

2016-08-01

The speed-accuracy trade-off (SAT) procedure was used to investigate the relationship between working memory capacity (WMC) and the dynamics of temporal order memory retrieval. High- and low-span participants (HSs, LSs) studied sequentially presented five-item lists, followed by two probes from the study list. Participants indicated the more recent probe. Overall, accuracy was higher for HSs compared to LSs. Crucially, in contrast to previous investigations that observed no impact of WMC on speed of access to item information in memory (e.g., Öztekin & McElree, 2010), recovery of temporal order memory was slower for LSs. While accessing an item's representation in memory can be direct, recovery of relational information such as temporal order information requires a more controlled serial memory search. Collectively, these data indicate that WMC effects are particularly prominent during high demands of cognitive control, such as serial search operations necessary to access temporal order information from memory. Copyright © 2016 Elsevier B.V. All rights reserved.

Reward-related learning via multiple memory systems.

Science.gov (United States)

Delgado, Mauricio R; Dickerson, Kathryn C

2012-07-15

The application of a neuroeconomic approach to the study of reward-related processes has provided significant insights in our understanding of human learning and decision making. Much of this research has focused primarily on the contributions of the corticostriatal circuitry, involved in trial-and-error reward learning. As a result, less consideration has been allotted to the potential influence of different neural mechanisms such as the hippocampus or to more common ways in human society in which information is acquired and utilized to reach a decision, such as through explicit instruction rather than trial-and-error learning. This review examines the individual contributions of multiple learning and memory neural systems and their interactions during human decision making in both normal and neuropsychiatric populations. Specifically, the anatomical and functional connectivity across multiple memory systems are highlighted to suggest that probing the role of the hippocampus and its interactions with the corticostriatal circuitry via the application of model-based neuroeconomic approaches may provide novel insights into neuropsychiatric populations that suffer from damage to one of these structures and as a consequence have deficits in learning, memory, or decision making. Copyright © 2012 Society of Biological Psychiatry. Published by Elsevier Inc. All rights reserved.

Protect sensitive data with lightweight memory encryption

Science.gov (United States)